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Sample records for insulating oxide interfaces

  1. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

    Directory of Open Access Journals (Sweden)

    Valeri V. Afanas'ev

    2014-01-01

    Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

  2. The Role of Interfaces in Polyethylene/Metal-Oxide Nanocomposites for Ultrahigh-Voltage Insulating Materials.

    Science.gov (United States)

    Pourrahimi, Amir Masoud; Olsson, Richard T; Hedenqvist, Mikael S

    2018-01-01

    Recent progress in the development of polyethylene/metal-oxide nanocomposites for extruded high-voltage direct-current (HVDC) cables with ultrahigh electric insulation properties is presented. This is a promising technology with the potential of raising the upper voltage limit in today's underground/submarine cables, based on pristine polyethylene, to levels where the loss of energy during electric power transmission becomes low enough to ensure intercontinental electric power transmission. The development of HVDC insulating materials together with the impact of the interface between the particles and the polymer on the nanocomposites electric properties are shown. Important parameters from the atomic to the microlevel, such as interfacial chemistry, interfacial area, and degree of particle dispersion/aggregation, are discussed. This work is placed in perspective with important work by others, and suggested mechanisms for improved insulation using nanoparticles, such as increased charge trap density, adsorption of impurities/ions, and induced particle dipole moments are considered. The effects of the nanoparticles and of their interfacial structures on the mechanical properties and the implications of cavitation on the electric properties are also discussed. Although the main interest in improving the properties of insulating polymers has been on the use of nanoparticles, leading to nanodielectrics, it is pointed out here that larger microscopic hierarchical metal-oxide particles with high surface porosity also impart good insulation properties. The impact of the type of particle and its inherent properties (purity and conductivity) on the nanocomposite dielectric and insulating properties are also discussed based on data obtained by a newly developed technique to directly observe the charge distribution on a nanometer scale in the nanocomposite. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

    Directory of Open Access Journals (Sweden)

    Kaleem Abbas

    2018-03-01

    Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

  4. Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructures

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Kleibeuker, Josée E.

    2011-01-01

    AlO3, SrTiO3, and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface...

  5. The net charge at interfaces between insulators

    International Nuclear Information System (INIS)

    Bristowe, N C; Littlewood, P B; Artacho, Emilio

    2011-01-01

    The issue of the net charge at insulating oxide interfaces is briefly reviewed with the ambition of dispelling myths of such charges being affected by covalency and related charge density effects. For electrostatic analysis purposes, the net charge at such interfaces is defined by the counting of discrete electrons and core ion charges, and by the definition of the reference polarization of the separate, unperturbed bulk materials. The arguments are illustrated for the case of a thin film of LaAlO 3 over SrTiO 3 in the absence of free carriers, for which the net charge is exactly 0.5e per interface formula unit, if the polarization response in both materials is referred to zero bulk values. Further consequences of the argument are extracted for structural and chemical alterations of such interfaces, in which internal rearrangements are distinguished from extrinsic alterations (changes of stoichiometry, redox processes), only the latter affecting the interfacial net charge. The arguments are reviewed alongside the proposal of Stengel and Vanderbilt (2009 Phys. Rev. B 80 241103) of using formal polarization values instead of net interfacial charges, based on the interface theorem of Vanderbilt and King-Smith (1993 Phys. Rev. B 48 4442-55). Implications for non-centrosymmetric materials are discussed, as well as for interfaces for which the charge mismatch is an integer number of polarization quanta. (viewpoint)

  6. Topological Oxide Insulator in Cubic Perovskite Structure

    Science.gov (United States)

    Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

    2013-01-01

    The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

  7. Emergent Phenomena at Oxide Interfaces

    International Nuclear Information System (INIS)

    Hwang, H.Y.

    2012-01-01

    Transition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r → -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric polarization, i.e. ferroelectricity, or pyroelectricity once the point group belongs to polar group symmetry. (ii) Time-reversal symmetry (T) defined as t → -t. In quantum mechanics, the time-evolution of the wave-function Ψ is given by the phase factor e -iEt/h b ar with E being the energy, and hence time-reversal basically corresponds to taking the complex conjugate of the wave-function. Also the spin, which is induced by the 'spinning' of the particle, is reversed by time-reversal. Broken T-symmetry is most naturally associated with magnetism, since the spin operator changes sign

  8. Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator: Fate of Extinct Weyl Electrons

    Directory of Open Access Journals (Sweden)

    Youhei Yamaji

    2014-05-01

    Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.

  9. Electronic structure of ferromagnet-insulator interfaces: Fe/MgO and Co/MgO

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, M.

    2007-07-11

    In this thesis the electronic structure of Fe/MgO{sub x} and Co/MgO{sub x} ferromagnet-insulator interfaces, representing material systems which are widely used in magnetic tunnel junctions, is studied by means of spin- and angle-resolved photoemission spectroscopy. The photoemission studies focus particularly on the response of the ferromagnetic electronic system in contact with MgO of varying stoichiometries, as this reflects the mechanisms of metal-oxide bonding at real ferromagnet-insulator interfaces. The correlation between chemical bonding and electronic structure formation is analyzed by combining information from core- and valence-band photoemission spectroscopy. The spectral features are compared to band structure calculations, which are performed using the SPR-KKR method. The Fe/MgO and Co/MgO systems are prepared by molecular beam epitaxy under ultrahigh vacuum conditions on well-defined (4 x 6) GaAs(001) substrates. A structural analysis by means of low-energy electron diffraction (LEED) reveals their body-centered cubic crystalline structure, whereas the chemical characterization by Auger electron spectroscopy is used to quantify the chemical environment at the sample surfaces. The magnetic analysis, using the magneto-optical Kerr effect, reveals the uniaxial anisotropy of the ferromagnetic layers. A crucial parameter is given by the MgO degree of oxidation, which is addressed by means of core-level spectroscopy and quantified by suitable fitting procedures of the Mg 2p core level. The results of the photoemission experiments show, that the electronic structure of the Fe/MgO and Co/MgO ferromagnet/insulator interfaces and, consequently, the interfacial spin polarization are sensitively controlled by the interface chemistry. In particular, three distinct scenarios are identified: the nearly stoichiometric, the oxygen-deficient and the over-oxidized ferromagnet/MgO interface. Each case is defined by innate characteristics of the electronic structure at

  10. Conversion of spin current into charge current in a topological insulator: Role of the interface

    Science.gov (United States)

    Dey, Rik; Prasad, Nitin; Register, Leonard F.; Banerjee, Sanjay K.

    2018-05-01

    Three-dimensional spin current density injected onto the surface of a topological insulator (TI) produces a two-dimensional charge current density on the surface of the TI, which is the so-called inverse Edelstein effect (IEE). The ratio of the surface charge current density on the TI to the spin current density injected across the interface defined as the IEE length was shown to be exactly equal to the mean free path in the TI determined to be independent of the electron transmission rate across the interface [Phys. Rev. B 94, 184423 (2016), 10.1103/PhysRevB.94.184423]. However, we find that the transmission rate across the interface gives a nonzero contribution to the transport relaxation rate in the TI as well as to the effective IEE relaxation rate (over and above any surface hybridization effects), and the IEE length is always less than the original mean free path in the TI without the interface. We show that both the IEE relaxation time and the transport relaxation time in the TI are modified by the interface transmission time. The correction becomes significant when the transmission time across the interface becomes comparable to or less than the original momentum scattering time in the TI. This correction is similar to experimental results in Rashba electron systems in which the IEE relaxation time was found shorter in the case of direct interface with metal in which the interface transmission rate will be much higher, compared to interfaces incorporating insulating oxides. Our results indicate the continued importance of the interface to obtain a better spin-to-charge current conversion and a limitation to the conversion efficiency due to the quality of the interface.

  11. Flashover of a vacuum-insulator interface: A statistical model

    Directory of Open Access Journals (Sweden)

    W. A. Stygar

    2004-07-01

    Full Text Available We have developed a statistical model for the flashover of a 45° vacuum-insulator interface (such as would be found in an accelerator subject to a pulsed electric field. The model assumes that the initiation of a flashover plasma is a stochastic process, that the characteristic statistical component of the flashover delay time is much greater than the plasma formative time, and that the average rate at which flashovers occur is a power-law function of the instantaneous value of the electric field. Under these conditions, we find that the flashover probability is given by 1-exp(-E_{p}^{β}t_{eff}C/k^{β}, where E_{p} is the peak value in time of the spatially averaged electric field E(t, t_{eff}≡∫[E(t/E_{p}]^{β}dt is the effective pulse width, C is the insulator circumference, k∝exp(λ/d, and β and λ are constants. We define E(t as V(t/d, where V(t is the voltage across the insulator and d is the insulator thickness. Since the model assumes that flashovers occur at random azimuthal locations along the insulator, it does not apply to systems that have a significant defect, i.e., a location contaminated with debris or compromised by an imperfection at which flashovers repeatedly take place, and which prevents a random spatial distribution. The model is consistent with flashover measurements to within 7% for pulse widths between 0.5 ns and 10   μs, and to within a factor of 2 between 0.5 ns and 90 s (a span of over 11 orders of magnitude. For these measurements, E_{p} ranges from 64 to 651  kV/cm, d from 0.50 to 4.32 cm, and C from 4.96 to 95.74 cm. The model is significantly more accurate, and is valid over a wider range of parameters, than the J. C. Martin flashover relation that has been in use since 1971 [J. C. Martin on Pulsed Power, edited by T. H. Martin, A. H. Guenther, and M. Kristiansen (Plenum, New York, 1996]. We have generalized the statistical model to estimate the total-flashover probability of an

  12. Electron drag in ferromagnetic structures separated by an insulating interface

    Science.gov (United States)

    Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

    2018-06-01

    We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

  13. Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

    2016-07-01

    Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

  14. Unified computational model of transport in metal-insulating oxide-metal systems

    Science.gov (United States)

    Tierney, B. D.; Hjalmarson, H. P.; Jacobs-Gedrim, R. B.; Agarwal, Sapan; James, C. D.; Marinella, M. J.

    2018-04-01

    A unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift-diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. Finally, an explanation of ReRAM bipolar switching behavior based on these results is proposed.

  15. Oxide surfaces and metal/oxide interfaces studied by grazing incidence X-ray scattering

    Science.gov (United States)

    Renaud, Gilles

    Experimental determinations of the atomic structure of insulating oxide surfaces and metal/oxide interfaces are scarce, because surface science techniques are often limited by the insulating character of the substrate. Grazing incidence X-ray scattering (GIXS), which is not subject to charge effects, can provide very precise information on the atomic structure of oxide surfaces: roughness, relaxation and reconstruction. It is also well adapted to analyze the atomic structure, the registry, the misfit relaxation, elastic or plastic, the growth mode and the morphology of metal/oxide interfaces during their growth, performed in situ. GIXS also allows the analysis of thin films and buried interfaces, in a non-destructive way, yielding the epitaxial relationships, and, by variation of the grazing incidence angle, the lattice parameter relaxation along the growth direction. On semi-coherent interfaces, the existence of an ordered network of interfacial misfit dislocations can be demonstrated, its Burger's vector determined, its ordering during in situ annealing cycles followed, and sometimes even its atomic structure can be addressed. Careful analysis during growth allows the modeling of the dislocation nucleation process. This review emphasizes the new information that GIXS can bring to oxide surfaces and metal/oxide interfaces by comparison with other surface science techniques. The principles of X-ray diffraction by surfaces and interfaces are recalled, together with the advantages and properties of grazing angles. The specific experimental requirements are discussed. Recent results are presented on the determination of the atomic structure of relaxed or reconstructed oxide surfaces. A description of results obtained during the in situ growth of metal on oxide surfaces is also given, as well as investigations of thick metal films on oxide surfaces, with lattice parameter misfit relaxed by an array of dislocations. Recent work performed on oxide thin films having

  16. Field-induced resistance switching at metal/perovskite manganese oxide interface

    International Nuclear Information System (INIS)

    Ohkubo, I.; Tsubouchi, K.; Harada, T.; Kumigashira, H.; Itaka, K.; Matsumoto, Y.; Ohnishi, T.; Lippmaa, M.; Koinuma, H.; Oshima, M.

    2008-01-01

    Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films

  17. Microstructure examination of the interface of the glass-ceramic insulator of the molybdenum frame of a vacuum tube

    International Nuclear Information System (INIS)

    Spears, R.K.

    1980-01-01

    A common technique used in examining the structural integrity of a glass-ceramic insulator-molybdenum cylinder bond in a vacuum tube subassembly is to slit the outer molybdenum cylinder and separate it from the glass-ceramic insulator. Typically, a black glassy layer (0.001 to 0.002 in. thick) remains on the cylinder. This layer has been interpreted as a requirement for an adequate seal. A subassembly was found that did not exhibit this feature. Further investigation of approximately 100 subassemblies revealed four more parts lacking a black glassy layer. These parts were found to be from two production runs and from three glass-ceramic lots. A microstructural analysis showed that on those parts having a black glassy layer, the crystalline phase in the glass-ceramic grew to within one to two microns of the metal interface and then terminated. A dark region existed in the insulator between the interface and the termination of the crystalline phase. This was attributed to molybdenum oxide dissolved in the glass. On those parts where the glass-ceramic broke clean from the cylinder, the crystalline phase extended up to the metal. Also observed on these parts was the appearance of a dark region adjacent to the metal that extended approximately one to two microns into the glass-ceramic. This was assumed to be an oxide of molybdenum. This report presents information concerning the microstructure of the interface

  18. Charge transport through superconductor/Anderson-insulator interfaces

    International Nuclear Information System (INIS)

    Frydman, A.; Ovadyahu, Z.

    1997-01-01

    We report on a study of charge transport through superconductor-insulator-superconductor and normal metal endash insulator endash superconductor structures (SIS and NIS junctions, respectively) where the insulator is of the Anderson type. Devices which are characterized by a junction resistance larger than 10 kΩ show behavior which is typical of Giaever tunnel junctions. In structures having smaller resistance, several peculiar features are observed. In the SIS junctions, Josephson coupling is detected over distances much larger then the typical insulator localization length. In addition, a series of resistance peaks appears at voltages of 2Δ/n, where Δ is the superconducting gap. The NIS Junctions exhibit a large resistance dip at subgap bias. We discuss possible interpretations of these findings and suggest that they may result from the presence of high transmission channels through the barrier region. copyright 1997 The American Physical Society

  19. Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kolomiiets, Nadiia M.; Afanas' ev, Valery V.; Madia, Oreste; Stesmans, Andre [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001 Leuven (Belgium); Cott, Daire J.; Collaert, Nadine [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Thean, Aaron [Imec, Kapeldreef 75, 3001 Leuven (Belgium); National University of Singapore (Singapore)

    2016-12-15

    By analyzing internal photoemission of electrons from Si/SiO{sub x}-passivated Ge into insulating HfO{sub 2} we found that insertion of additional La interlayer between SiO{sub x} and HfO{sub 2} leads to dramatic increase (more than by factor of 20) of the barrier transparency. However, no measurable variation of the interface barrier height is observed suggesting that La induces intermixing of near-interface oxide stack resulting in development of additional density of states corresponding to conduction band of LaO{sub x} and HfO{sub x} sub-networks. At the same time, photoemission results indicate the presence of discrete positive charges in the near-interface oxide layer which may explain the observed ∝1 V shift of capacitance-voltage curves. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Theory of the Spin Galvanic Effect at Oxide Interfaces

    Science.gov (United States)

    Seibold, Götz; Caprara, Sergio; Grilli, Marco; Raimondi, Roberto

    2017-12-01

    The spin galvanic effect (SGE) describes the conversion of a nonequilibrium spin polarization into a transverse charge current. Recent experiments have demonstrated a large conversion efficiency for the two-dimensional electron gas formed at the interface between two insulating oxides, LaAlO3 and SrTiO3 . Here, we analyze the SGE for oxide interfaces within a three-band model for the Ti t2 g orbitals which displays an interesting variety of effective spin-orbit couplings in the individual bands that contribute differently to the spin-charge conversion. Our analytical approach is supplemented by a numerical treatment where we also investigate the influence of disorder and temperature, which turns out to be crucial to providing an appropriate description of the experimental data.

  1. Transient behavior of interface state continuum at InP insulator-semiconductor interface

    International Nuclear Information System (INIS)

    Hasegawa, H.; Masuda, H.; He, L.; Luo, J.K.; Sawada, T.; Ohno, H.

    1987-01-01

    To clarify the drain current drift mechanism in InP MISFETs, an isothermal capacitance transient spectroscopy (ICTS) study of the interface state continuum is made on the anodic Al 2 O 3 /native oxide/ InP MIS system. Capture behavior is temperature-independent, non-exponential and extremely slow, whereas emission behavior is temperature- and bias- dependent, and is much faster. The observed behavior is explained quantitatively by the disorder induced gap state (DIGS) model, where states are distributed both in energy and in space. By comparing the transient behavior of interface states with the observed drift behavior of MISFETs, it is concluded that the electron capture by the DIGS continuum is responsible for the drain current drift of MISFETs. This led to a complete computer simulation of the observed current drift behavior

  2. Thermal transport across metal–insulator interface via electron–phonon interaction

    International Nuclear Information System (INIS)

    Zhang, Lifa; Wang, Jian-Sheng; Li, Baowen; Lü, Jing-Tao

    2013-01-01

    The thermal transport across a metal–insulator interface can be characterized by electron–phonon interaction through which an electron lead is coupled to a phonon lead if phonon–phonon coupling at the interface is very weak. We investigate the thermal conductance and rectification between the electron part and the phonon part using the nonequilibrium Green’s function method. It is found that the thermal conductance has a nonmonotonic behavior as a function of average temperature or the coupling strength between the phonon leads in the metal part and the insulator part. The metal–insulator interface shows a clear thermal rectification effect, which can be reversed by a change in average temperature or the electron–phonon coupling. (paper)

  3. In between matters, interfaces in complex oxides

    NARCIS (Netherlands)

    van Zalk, M.

    2009-01-01

    Complex oxides are emerging as a versatile class of materials, exhibiting a wide variety of properties. In recent years, it has become increasingly clear that the properties of complex-oxide interfaces can differ considerably from those of the bulk. This opens up the possibility of tuning and

  4. In Between Matters : Interfaces in Complex Oxides

    NARCIS (Netherlands)

    van Zalk, M.

    2009-01-01

    Complex oxides are emerging as a versatile class of materials, exhibiting a wide variety of properties. In recent years, it has become increasingly clear that the properties of complex-oxide interfaces can differ considerably from those of the bulk. This opens up the possibility of tuning and

  5. Frozen Dynamics and Insulation of Water at the Lipid Interface

    NARCIS (Netherlands)

    Bakulin, A.A.; Cringus, D.; Pshenichnikov, M.S.; Wiersma, D.A.; Corkum, P; DeSilvestri, S; Nelson, KA; Riedle, E

    2009-01-01

    2D IR correlation spectroscopy reveals extremely slow dynamics and splitting of the OH-stretching mode of water in anionic micelles. Water at the lipid interface behaves as if the molecules were isolated in a "frozen" environment.

  6. Engineering complex oxide interfaces for oxide electronics

    NARCIS (Netherlands)

    Roy, Saurabh

    2015-01-01

    A complex interplay of physics and chemistry in transition metal oxides determines their electronic, magnetic, and ferroic properties enabling a wide range of applications of these materials. BiFeO_3, a canonical multiferroic system exhibits the interesting feature of enhanced conductivity on

  7. Improved design of a high-voltage vacuum-insulator interface

    Directory of Open Access Journals (Sweden)

    W. A. Stygar

    2005-05-01

    Full Text Available We have conducted a series of experiments designed to measure the flashover strength of various azimuthally symmetric 45° vacuum-insulator configurations. The principal objective of the experiments was to identify a configuration with a flashover strength greater than that of the standard design, which consists of a 45° polymethyl-methacrylate (PMMA insulator between flat electrodes. The thickness d and circumference C of the insulators tested were held constant at 4.318 and 95.74 cm, respectively. The peak voltage applied to the insulators ranged from 0.8 to 2.2 MV. The rise time of the voltage pulse was 40–60 ns; the effective pulse width [as defined in Phys. Rev. ST Accel. Beams 7, 070401 (2004PRABFM1098-440210.1103/PhysRevSTAB.7.070401] was on the order of 10 ns. Experiments conducted with flat aluminum electrodes demonstrate that the flashover strength of a crosslinked polystyrene (Rexolite insulator is (18±7% higher than that of PMMA. Experiments conducted with a Rexolite insulator and an anode plug, i.e., an extension of the anode into the insulator, demonstrate that a plug can increase the flashover strength by an additional (44±11%. The results are consistent with the Anderson model of anode-initiated flashover, and confirm previous measurements. It appears that a Rexolite insulator with an anode plug can, in principle, increase the peak electromagnetic power that can be transmitted across a vacuum interface by a factor of [(1.18(1.44]^{2}=2.9 over that which can be achieved with the standard design.

  8. Properties of insulator interfaces with p-HgCdTe

    International Nuclear Information System (INIS)

    Schacham, S.E.; Finkman, E.

    1990-01-01

    Heat treatment at 70 degree C of low carrier concentration p-type HgCdTe samples (p 0 =8x10 14 cm -3 ) generates an inverted surface layer. A two day anneal process below 95 degree C did not affect the Hall coefficient, whereas an almost complete recovery was obtained by annealing at 120 degree C. While bulk electron mobility, obtained from PEM data, remained high (about 9x10 4 cm 2 /V s at 77 K), surface mobility is lower by more than an order of magnitude. Surface recombination velocity indicates a continuous improvement with increased temperature, and the activation energy remains equal to the vacancies energy level. The proposed mechanism is that of positive charges in the sulfide migrating towards the interface and generating an image inversion layer

  9. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

    NARCIS (Netherlands)

    Chen, Yunzhong; Trier, F.; Wijnands, Tom; Green, R.J.; Gauquelin, N.; Egoavil, R.; Christensen, D.V.; Koster, Gertjan; Huijben, Mark; Bovet, N.; Macke, S.; He, F.; Sutarto, R.; Andersen, N.H.; Sulpizio, J.A.; Honig, M.; Prawiroatmodjo, G.E.D.K.; Jespersen, T.S.; Linderoth, S.; Ilani, S.; Verbeeck, J.; van Tendeloo, G.; Rijnders, Augustinus J.H.M.; Sawatzky, G.A.; Pryds, N.

    2015-01-01

    Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable

  10. Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

    Science.gov (United States)

    Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

    2018-01-23

    Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

  11. An investigation of the oxidized Ni/InAs interface

    International Nuclear Information System (INIS)

    Venter, A.; Botha, J.R.; Swart, H.C.; Naidoo, S.; Olivier, E.J.

    2009-01-01

    Ni was resistively deposited onto bulk InAs and subsequently oxidized in an O 2 atmosphere. The anneal temperature and time were 450 deg. C and 2.5 h, respectively. X-ray diffraction of the oxidized Ni/InAs sample revealed the formation of In 3 Ni 2 and In 2 O 3 on the front suggesting inter diffusion of In, Ni and O. NiO was not detected by X-ray diffraction. In a preliminary study, using glass as a substrate, NiO readily formed when using these oxidation parameters. Conductivity measurements of the oxidized Ni/InAs surface revealed a conducting front and insulating rear surface while TEM of the Ni/InAs interface revealed an intermediate amorphous diffusion zone between the 'oxidized' Ni layer and the bulk InAs. A closer investigation of the intermediate layer supports the X-ray diffraction results, suggesting compound formation due to diffusion of oxygen and nickel into the substrate, and out-diffusion of In and As from the bulk of the sample. AES was used to further elucidate these results.

  12. An investigation of the oxidized Ni/InAs interface

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Naidoo, S.; Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Ni was resistively deposited onto bulk InAs and subsequently oxidized in an O{sub 2} atmosphere. The anneal temperature and time were 450 deg. C and 2.5 h, respectively. X-ray diffraction of the oxidized Ni/InAs sample revealed the formation of In{sub 3}Ni{sub 2} and In{sub 2}O{sub 3} on the front suggesting inter diffusion of In, Ni and O. NiO was not detected by X-ray diffraction. In a preliminary study, using glass as a substrate, NiO readily formed when using these oxidation parameters. Conductivity measurements of the oxidized Ni/InAs surface revealed a conducting front and insulating rear surface while TEM of the Ni/InAs interface revealed an intermediate amorphous diffusion zone between the 'oxidized' Ni layer and the bulk InAs. A closer investigation of the intermediate layer supports the X-ray diffraction results, suggesting compound formation due to diffusion of oxygen and nickel into the substrate, and out-diffusion of In and As from the bulk of the sample. AES was used to further elucidate these results.

  13. Electroluminescence and electrical degradation of insulating polymers at electrode interfaces under divergent fields

    Science.gov (United States)

    Zhang, Shuai; Li, Qi; Hu, Jun; Zhang, Bo; He, Jinliang

    2018-04-01

    Electrical degradation of insulating polymers at electrode interfaces is an essential factor in determining long-term reliability. A critical challenge is that the exact mechanism of degradation is not fully understood, either experimentally or theoretically, due to the inherent complex processes. Consequently, in this study, we investigate electroluminescence (EL) at the interface of an electrode and insulator, and determine the relationship between EL and electrical degradation. Using a tip-plate electrode structure, the unique features of EL under a highly divergent field are investigated. The voltage type (alternating or direct current), the polymer matrix, and the time of pressing are also investigated separately. A study of EL from insulators under a divergent field is provided, and the relationship between EL spectra and degradation is discussed. It is shown that EL spectra under a divergent field have unique characteristics compared with EL spectra from polymer films under a uniform field and the most obvious one is the UV emission. The results obtained in the current investigation bring us a step closer to understanding the process of electrical degradation and provide a potential way to diagnose insulator defects.

  14. Surface plasmon on topological insulator/dielectric interface enhanced ZnO ultraviolet photoluminescence

    Directory of Open Access Journals (Sweden)

    Zhi-Min Liao

    2012-06-01

    Full Text Available It has recently been predicted that the surface plasmons are allowed to exist on the interface between a topological insulator and vacuum. Surface plasmons can be employed to enhance the optical emission from various illuminants. Here, we study the photoluminescence properties of the ZnO/Bi2Te3 hybrid structures. Thin flakes of Bi2Te3, a typical three-dimensional topological insulator, were prepared on ZnO crystal surface by mechanical exfoliation method. The ultraviolet emission from ZnO was found to be enhanced by the Bi2Te3 thin flakes, which was attributed to the surface plasmon – photon coupling at the Bi2Te3/ZnO interface.

  15. From Two-Phase to Three-Phase: The New Electrochemical Interface by Oxide Electrocatalysts

    Science.gov (United States)

    Xu, Zhichuan J.

    2018-03-01

    Electrochemical reactions typically occur at the interface between a solid electrode and a liquid electrolyte. The charge exchange behaviour between these two phases determines the kinetics of electrochemical reactions. In the past few years, significant advances have been made in the development of metal oxide electrocatalysts for fuel cell and electrolyser reactions. However, considerable gaps remain in the fundamental understanding of the charge transfer pathways and the interaction between the metal oxides and the conducting substrate on which they are located. In particular, the electrochemical interfaces of metal oxides are significantly different from the traditional (metal) ones, where only a conductive solid electrode and a liquid electrolyte are considered. Oxides are insulating and have to be combined with carbon as a conductive mediator. This electrode configuration results in a three-phase electrochemical interface, consisting of the insulating oxide, the conductive carbon, and the liquid electrolyte. To date, the mechanistic insights into this kind of non-traditional electrochemical interface remain unclear. Consequently conventional electrochemistry concepts, established on classical electrode materials and their two-phase interfaces, are facing challenges when employed for explaining these new electrode materials. [Figure not available: see fulltext.

  16. Voltage Control of Rare-Earth Magnetic Moments at the Magnetic-Insulator-Metal Interface

    Science.gov (United States)

    Leon, Alejandro O.; Cahaya, Adam B.; Bauer, Gerrit E. W.

    2018-01-01

    The large spin-orbit interaction in the lanthanides implies a strong coupling between their internal charge and spin degrees of freedom. We formulate the coupling between the voltage and the local magnetic moments of rare-earth atoms with a partially filled 4 f shell at the interface between an insulator and a metal. The rare-earth-mediated torques allow the power-efficient control of spintronic devices by electric-field-induced ferromagnetic resonance and magnetization switching.

  17. Interfaces and nanostructures of oxide octahedral frameworks

    Directory of Open Access Journals (Sweden)

    Felip eSandiumenge

    2014-08-01

    Full Text Available In the past decade, the rich physics exhibited by solid interfaces combining octahedral framework structures of transition metal oxides has fascinated the materials science community. However, the behavior of these materials still elude the current understanding of classical semiconductor and metal epitaxy. The reason for that is rooted in the surprising versatility of linked coordination units to adapt to a dissimilar substrate and the strong sensitivity of correlated oxides to external perturbations. The confluence of atomic control in oxide thin film epitaxy, state of the art high spatial resolution characterization techniques, and electronic structure computations, has allowed in recent years to obtain first insights on the underlying microscopic mechanisms governing the epitaxy of these fascinating materials. Here, we shortly review these mechanisms and highlight their potential in the design of novel nanostructures with enhanced functionalities.

  18. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-08-01

    Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  19. Oxide Interfaces: emergent structure and dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Clarke, Roy [Univ. of Michigan, Ann Arbor, MI (United States)

    2016-08-16

    This Final Report describes the scientific accomplishments that have been achieved with support from grant DE-FG02-06ER46273 during the period 6/1/2012– 5/31/2016. The overall goals of this program were focused on the behavior of epitaxial oxide heterostructures at atomic length scales (Ångstroms), and correspondingly short time-scales (fs -ns). The results contributed fundamentally to one of the currently most active frontiers in condensed matter physics research, namely to better understand the intricate relationship between charge, lattice, orbital and spin degrees of freedom that are exhibited by complex oxide heterostructures. The findings also contributed towards an important technological goal which was to achieve a better basic understanding of structural and electronic correlations so that the unusual properties of complex oxides can be exploited for energy-critical applications. Specific research directions included: probing the microscopic behavior of epitaxial interfaces and buried layers; novel materials structures that emerge from ionic and electronic reconfiguration at epitaxial interfaces; ultrahigh-resolution mapping of the atomic structure of heterointerfaces using synchrotron-based x-ray surface scattering, including direct methods of phase retrieval; using ultrafast lasers to study the effects of transient strain on coherent manipulation of multi-ferroic order parameters; and investigating structural ordering and relaxation processes in real-time.

  20. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  1. Estimation of carrier mobility at organic semiconductor/insulator interface using an asymmetric capacitive test structure

    Directory of Open Access Journals (Sweden)

    Rajesh Agarwal

    2016-04-01

    Full Text Available Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. The present work describes estimation of mobility using admittance measurements performed on an asymmetric capacitive test structure. Besides the advantage of simplicity, it is shown that at low frequencies, the measured capacitance comes from a large area of channel making the capacitance-voltage characteristics insensitive to contact resistances. 2-D numerical simulation and experimental results obtained with Pentacene/Poly(4-vinyphenol system are presented to illustrate the operation and advantages of the proposed technique.

  2. Interface properties of Fe/MgO/Cu-phthalocyanine metal-insulator-organic semiconductor structures

    International Nuclear Information System (INIS)

    Lee, Nyunjong; Bae, Yujeong; Kim, Taehee; Ito, Eisuke; Hara, Masahiko

    2014-01-01

    Hybrid interface structures consisting of organic copper-phthalocyanine (CuPc) and ferromagnetic metal Fe(001) with and without a MgO(001) cover were investigated by using surface sensitive techniques of X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. A systematic study of the energy level alignment at the interfaces was carried out. For the hybrid interfaces considered here, our results indicate that the insertion of an artificially-grown ultra-thin oxide layer MgO(001) can prevent Femi level pinning and induce a rather large interface dipole, thereby resulting in remarkable CuPc Fermi level shifts when the thickness of the CuPc film is less than 3 nm. This study provides a better understanding of spin filtering in MgO-based organic spin devices and a new way to alter the interface electronic structure of metal/organic semiconductor hybrid systems.

  3. Nanoporous Insulating Oxide Deionization Device Having Asymmetric Electrodes and Method of Use Thereof

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A nanoporous insulating oxide deionization device, method of manufacture and method of use thereof for deionizing a water supply (such as a hard water supply), for...

  4. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-01-01

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna

  5. Insulating electrodes: a review on biopotential front ends for dielectric skin–electrode interfaces

    International Nuclear Information System (INIS)

    Spinelli, Enrique; Haberman, Marcelo

    2010-01-01

    Insulating electrodes, also known as capacitive electrodes, allow acquiring biopotentials without galvanic contact with the body. They operate with displacement currents instead of real charge currents, and the electrolytic electrode–skin interface is replaced by a dielectric film. The use of insulating electrodes is not the end of electrode interface problems but the beginning of new ones: coupling capacitances are of the order of pF calling for ultra-high input impedance amplifiers and careful biasing, guarding and shielding techniques. In this work, the general requirements of front ends for capacitive electrodes are presented and the different contributions to the overall noise are discussed and estimated. This analysis yields that noise bounds depend on features of the available devices as current and voltage noise, but the final noise level also depends on parasitic capacitances, requiring a careful shield and printed circuit design. When the dielectric layer is placed on the skin, the present-day amplifiers allow achieving noise levels similar to those provided by wet electrodes. Furthermore, capacitive electrode technology allows acquiring high quality ECG signals through thin clothes. A prototype front end for capacitive electrodes was built and tested. ECG signals were acquired with these electrodes in direct contact with the skin and also through cotton clothes 350 µm thick. They were compared with simultaneously acquired signals by means of wet electrodes and no significant differences were observed between both output signals

  6. New mechanism of semiconductor polarization at the interface with an organic insulator

    International Nuclear Information System (INIS)

    Yafyasov, A. M.; Bogevolnov, V. B.; Ryumtsev, E. I.; Kovshik, A. P.; Mikhailovski, V. Yu.

    2017-01-01

    A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N_s_s) at the interface. A system with N_s_s ≈ 5 × 10"1"0 cm"–"2 is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

  7. New mechanism of semiconductor polarization at the interface with an organic insulator

    Energy Technology Data Exchange (ETDEWEB)

    Yafyasov, A. M., E-mail: yafyasov@gmail.com; Bogevolnov, V. B.; Ryumtsev, E. I.; Kovshik, A. P. [St. Petersburg State University (Russian Federation); Mikhailovski, V. Yu. [Interdisciplinary Resource Center for Nanotechnology at St. Petersburg University (Russian Federation)

    2017-02-15

    A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (N{sub ss}) at the interface. A system with N{sub ss} ≈ 5 × 10{sup 10} cm{sup –2} is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

  8. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  9. La interstitial defect-induced insulator-metal transition in the oxide heterostructures LaAl O3 /SrTi O3

    Science.gov (United States)

    Zhou, Jun; Yang, Ming; Feng, Yuan Ping; Rusydi, Andrivo

    2017-11-01

    Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronic applications. Here, based on first-principles calculations, we propose a surface La interstitial promoted interface insulator-metal transition in LaAl O3 /SrTi O3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAl O3 /SrTi O3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in an ambient atmospheric environment. Interestingly, these surface La interstitials also induce significant spin-splitting states with a Ti dy z/dx z character at a conducting LaAl O3 /SrTi O3 (110) interface. On the other hand, for insulating LaAl O3 /SrTi O3 (110) (<4 unit cells LaAl O3 thickness), a distortion between La (Al) and O atoms is found at the LaAl O3 side, partially compensating the polarization divergence. Our results reveal the origin of the metal-insulator transition in LaAl O3 /SrTi O3 (110) heterostructures, and also shed light on the manipulation of the superior properties of LaAl O3 /SrTi O3 (110) for different possibilities in electronic and magnetic applications.

  10. Current redistribution in cables made of insulated, soldered, or oxidized strands

    International Nuclear Information System (INIS)

    Turck, B.

    1979-07-01

    Current redistributions are compared in cables made of insulated strands, soldered, or oxidized strands and insulated strands with periodic joints. After discussing the different current redistributions in the cases of a rapidly changing current and a dc current, several particular situations are investigated: what happens if a strand is broken, or if a local normal zone appears that does not affect all the strands equally, the detection of this normal zone, and the influence of short circuits between strands

  11. Chemical oxidation of cable insulating oil contaminated soil

    NARCIS (Netherlands)

    Jinlan Xu,; Pancras, T.; Grotenhuis, J.T.C.

    2011-01-01

    Leaking cable insulating oil is a common source of soil contamination of high-voltage underground electricity cables in many European countries. In situ remediation of these contaminations is very difficult, due to the nature of the contamination and the high concentrations present. Chemical

  12. Observation of hidden atomic order at the interface between Fe and topological insulator Bi_{2}Te_{3}

    OpenAIRE

    Sanchez-Barriga, Jaime; Ogorodnikov, Ilya I.; Kuznetsov, Mikhail V.; Volykhov, Andrey A.; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I.; Koch, Roland J.; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V.

    2017-01-01

    Abstract: To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi2Te3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi2Te3 at room temperature, the Fe atoms are ordered at the interface despite the surface diso...

  13. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    International Nuclear Information System (INIS)

    Yanchev, I.

    2003-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated

  14. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in mis-structures

    International Nuclear Information System (INIS)

    Yanchev, I; Slavcheva, G.

    1993-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential Γ 2 to which it leads in distinction with the so far known correlation functions leading to divergent dispersion. The important characteristic of the random potential distribution Γ 2 determining the amplitude of the potential fluctuations is calculated. 7 refs. (orig.)

  15. Potential fluctuations due to the randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    International Nuclear Information System (INIS)

    Slavcheva, G.; Yanchev, I.

    1991-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening due to the image charge with respect to the metal electrode in MIS-structure is taken into account, introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential Γ 2 to which it leads in distinction with the so far known correlation functions leading to divergent dispersion. The important characteristic of the random potential distribution Γ 2 determining the amplitude of the potential fluctuations is calculated. (author). 7 refs, 1 fig

  16. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    CERN Document Server

    Yanchev, I

    2003-01-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated.

  17. Potential fluctuations due to randomly distributed charges at the semiconductor-insulator interface in MIS-structures

    Energy Technology Data Exchange (ETDEWEB)

    Yanchev, I

    2003-07-01

    A new expression for the Fourier transform of the binary correlation function of the random potential near the semiconductor-insulator interface is derived. The screening from the metal electrode in MIS-structure is taken into account introducing an effective insulator thickness. An essential advantage of this correlation function is the finite dispersion of the random potential to which it leads in distinction with the so far known correlation functions leading to a divergent dispersion. The dispersion, an important characteristic of the random potential distribution, determining the amplitude of the potential fluctuations is calculated.

  18. Electrostatic doping of a Mott insulator in an oxide heterostructure: the case of LaVO{sub 3}/SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Andreas; Pfaff, Florian; Sing, Michael; Claessen, Ralph [Physikalisches Insititut and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany); Boschker, Hans; Kamp, Martin; Koster, Gertjan; Rijnders, Guus [Faculty of Science and Technology and MESA-plus Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

    2012-07-01

    The discovery of a quasi-two-dimensional electron system at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3} has triggered intense investigations of oxide heterostructures with other material combinations. The hope is that by combining a polar overlayer with a non-polar substrate electronic reconstruction will lead to highly mobile interface charge carriers with special properties. The formation of a conducting interface layer in epitaxial LaVO{sub 3}/SrTiO{sub 3}, where LaVO{sub 3} is a Mott insulator, is studied by transport measurements and hard X-ray photoelectron spectroscopy. We identify an insulator-to-metal transition above a critical LaVO{sub 3} thickness with transport properties similar to those recently reported for LaAlO{sub 3}/SrTiO{sub 3} interfaces. Interestingly, our photoemission measurements give evidence that electronic charge is transferred exclusively to the LaVO{sub 3}-side of the interface caused by an electronic reconstruction within the film itself. This opens the opportunity to study a band-filling controlled Mott transition induced by a purely electrostatic mechanism.

  19. Final Report: Stability and Novel Properties of Magnetic Materials and Ferromagnet / Insulator Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Voyles, Paul M. [Univ. of Wisconsin, Madison, WI (United States); Chang, Y. Austin [Univ. of Wisconsin, Madison, WI (United States)

    2013-07-24

    We report investigations of the synthesis, structure, and properties of new materials for spintronic applications integrated onto silicon substrates. Our primary focus is materials with very high, negative, intrinsic spin polarization of the density of states at the Fermi level. We have developed a new synthesis method for Fe3O4 thin films through selective oxidation of Fe, resulting in smooth, low-defect density films. We have synthesized Fe4N films and shown that they preferentially oxidize to Fe3O4. When integrated into magnetic tunnel junctions consisting of Fe4N / AlOx / Fe, oxidation at the Fe4N / AlOx interface creates Fe3O4, leading to negative tunneling magnetoresistance (TMR). Oxidation of Fe in nominally symmetric CoFe / AlOx / CoFe also produces Fe3O4 and negative TMR under selected oxidation conditions.

  20. The metallic interface between the two band insulators LaGaO3 and SrTiO3

    KAUST Repository

    Nazir, Safdar

    2011-06-28

    The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

  1. The metallic interface between the two band insulators LaGaO3 and SrTiO3

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo; Singh, Nirpendra

    2011-01-01

    The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

  2. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  3. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  4. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Trier, Felix; Wijnands, T.

    2015-01-01

    as applied research of complex oxides. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more...

  5. Photoinduced Coherent Spin Fluctuation in Primary Dynamics of Insulator to Metal Transition in Perovskite Cobalt Oxide

    Directory of Open Access Journals (Sweden)

    Arima T.

    2013-03-01

    Full Text Available Coherent spin fluctuation was detected in the photoinduced Mott insulator-metal transition in perovskite cobalt oxide by using 3 optical-cycle infrared pulse. Such coherent spin fluctuation is driven by the perovskite distortion changing orbital gap.

  6. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  7. A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces.

    Science.gov (United States)

    Yu, Liping; Zunger, Alex

    2014-10-13

    The discovery of conductivity and magnetism at the polar-nonpolar interfaces of insulating nonmagnetic oxides such as LaAlO3 and SrTiO3 has raised prospects for attaining interfacial functionalities absent in the component materials. Yet, the microscopic origin of such emergent phenomena remains unclear, posing obstacles to design of improved functionalities. Here we present first principles calculations of electronic and defect properties of LaAlO3/SrTiO3 interfaces and reveal a unifying mechanism for the origins of both conductivity and magnetism. We demonstrate that the polar discontinuity across the interface triggers thermodynamically the spontaneous formation of certain defects that in turn cancel the polar field induced by the polar discontinuity. The ionization of the spontaneously formed surface oxygen vacancy defects leads to interface conductivity, whereas the unionized Ti-on-Al antisite defects lead to interface magnetism. The proposed mechanism suggests practical design principles for inducing and controlling both conductivity and magnetism at general polar-nonpolar interfaces.

  8. Rapid optical determination of topological insulator nanoplate thickness and oxidation

    Directory of Open Access Journals (Sweden)

    Fan Yang

    2017-01-01

    Full Text Available The stability of 2D antimony telluride (Sb2Te3 nanoplates in ambient conditions is elucidated. These materials exhibit an anisotropic oxidation mode, and CVD synthesized samples oxidize at a much faster rate than exfoliated samples investigated in previous studies. Optical measurement techniques are introduced to rapidly measure the oxidation modes and thickness of 2D materials. Auger characterization were conducted to confirm that oxygen replaces tellurium as opposed to antimony under ambient conditions. No surface morphology evolution was detected in AFM before and after exposure to air. These techniques were employed to determine the origin of the thickness dependent color change effect in Sb2Te3. It is concluded that this effect is a combination of refractive index change due to oxidation and Fresnel effects.

  9. Graphene Oxide flakes: methods and techniques for properties at interfaces

    OpenAIRE

    Paola, Zuppella; Sara, Zuccon; Marco, Nardello; Jody, Corso Alain; Simone, Silvestrini; Michele, Maggini; Guglielmina, Pelizzo Maria

    2014-01-01

    Graphene Oxide and reduced Graphene Oxide are intriguing materials for photonics and electronic devices both for intrinsic characteristics and as precursors for the synthesis of graphene. Whatever the application and the engineering purpose, a fine control of the chemical and physical properties is required since the performances of graphene based systems depend on the reduction state of Graphene Oxide and can be strongly affected by interfaces interactions and neighboring effects. Then, a me...

  10. High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2017-04-01

    In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

  11. Simulation of a two-dimensional sheath over a flat insulator-conductor interface on a radio-frequency biased electrode in a high-density plasma

    International Nuclear Information System (INIS)

    Kim, Doosik; Economou, Demetre J.

    2004-01-01

    A combined fluid/Monte Carlo (MC) simulation was developed to study the two-dimensional (2D) sheath over a flat insulator/conductor interface on a radio-frequency (rf) biased electrode in a high-density plasma. The insulator capacitance increased the local impedance between the plasma and the bias voltage source. Thus, for uniform ion density and electron temperature far away from the wall, the sheath potential over the insulator was only a fraction of that over the conductor, resulting in a thinner sheath over the insulator. The fluid model provided the spatiotemporal profiles of the 2D sheath electric field. These were used as input to the MC simulation to compute the ion energy distribution (IED) and ion angular distribution (IAD) at different locations on the surface. The ion flux, IED, and IAD changed drastically across the insulator/conductor interface due to the diverging rf electric field in the distorted sheath. The ion flux was larger on the conductor at the expense of that on the insulator. Both the ion impact angle and angular spread increased progressively as the material interface was approached. The ion impact energy and energy spread were smaller on the insulator as compared to the conductor. For given plasma parameters, as the insulator thickness was increased, the sheath potential and thickness over the insulator decreased, and sheath distortion became more pronounced

  12. Investigations of the electronic, magnetic and crystalline structure of perovskite oxides and an oxide-oxide interface

    International Nuclear Information System (INIS)

    Raisch, Christoph Werner

    2013-01-01

    The mineral perovskite CaTiO 3 lends its name to the class of compounds with composition ABX 3 , which have the same type of crystal structure known as the perovskite structure. Here, A and B are cations while X is typically a halogen or oxygen anion. The bigger cation A and the X anions form a cubic close packing AX 3 with the smaller B cation occupying one quarter of the octahedral sites. The underlying work deals with three classes of perovskite oxides, the ''titanates'', the ''cuprates'' and the ''manganites'', where the central B cations are Ti, Cu and Mn respectively, each class with very characteristic properties. Strontium titanate, STO, like so many oxides is an insulator, yet paraelectric and diamagnetic. It gained special interest as a commercially available, high quality substrate for the growth of hightemperature superconductors and other oxide thin films. The huge class of perovskite cuprates is most famous for members like YBCO, the well-known high-temperature superconductor. Finally, the doped, mixed-valent perovskite manganites LXMO (here X = Sr, Ca, Ce) have to be mentioned. They appeared on the screen of experimental and theoretical physicists in the 1950s when ferromagnetism and magnetoresistance were discovered in these compounds, leading to the theory of double exchange. In the mid-1990s they further increased their importance, following the description of the Jahn-Teller polaron and the discovery of the colossal magnetoresistance phenomenom. They may be derived from an insulator, LaMnO 3 , but the doping allows the control of electric and magnetic properties over a wide range, i.e. from insulating behavior to metallic conductivity or from diamagnet to ferromagnet. Further notable effects are found when electric or magnetic fields are applied, including spin polarization and the related effect of colossal magnetoresistance. These substances may be approximated as consisting of

  13. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

    Science.gov (United States)

    Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

    2015-12-23

    We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

  14. Patterning of high mobility electron gases at complex oxide interfaces

    DEFF Research Database (Denmark)

    Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

    2015-01-01

    Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

  15. Thermally insulating and fire-retardant lightweight anisotropic foams based on nanocellulose and graphene oxide

    Science.gov (United States)

    Wicklein, Bernd; Kocjan, Andraž; Salazar-Alvarez, German; Carosio, Federico; Camino, Giovanni; Antonietti, Markus; Bergström, Lennart

    2015-03-01

    High-performance thermally insulating materials from renewable resources are needed to improve the energy efficiency of buildings. Traditional fossil-fuel-derived insulation materials such as expanded polystyrene and polyurethane have thermal conductivities that are too high for retrofitting or for building new, surface-efficient passive houses. Tailored materials such as aerogels and vacuum insulating panels are fragile and susceptible to perforation. Here, we show that freeze-casting suspensions of cellulose nanofibres, graphene oxide and sepiolite nanorods produces super-insulating, fire-retardant and strong anisotropic foams that perform better than traditional polymer-based insulating materials. The foams are ultralight, show excellent combustion resistance and exhibit a thermal conductivity of 15 mW m-1 K-1, which is about half that of expanded polystyrene. At 30 °C and 85% relative humidity, the foams retained more than half of their initial strength. Our results show that nanoscale engineering is a promising strategy for producing foams with excellent properties using cellulose and other renewable nanosized fibrous materials.

  16. Oxide interfaces with enhanced ion conductivity

    NARCIS (Netherlands)

    Leon, C.; Santamaria, J.; Boukamp, Bernard A.

    2013-01-01

    The new field of nano-ionics is expected to yield large improvements in the performance of oxide-based energy generation and storage devices based on exploiting size effects in ion conducting materials. The search for novel materials with enhanced ionic conductivity for application in energy devices

  17. Ionic conductivity in oxide heterostructures: the role of interfaces

    Directory of Open Access Journals (Sweden)

    Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

    2010-01-01

    Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  18. The 2016 oxide electronic materials and oxide interfaces roadmap

    DEFF Research Database (Denmark)

    Lorenz, M.; Rao, M. S. Ramachandra; Venkatesan, T.

    2016-01-01

    of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap......, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action ‘towards oxide-based electronics’ which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies.In summary, we do hope that this oxide roadmap appears as an interesting...

  19. Universal electrode interface for electrocatalytic oxidation of liquid fuels.

    Science.gov (United States)

    Liao, Hualing; Qiu, Zhipeng; Wan, Qijin; Wang, Zhijie; Liu, Yi; Yang, Nianjun

    2014-10-22

    Electrocatalytic oxidations of liquid fuels from alcohols, carboxylic acids, and aldehydes were realized on a universal electrode interface. Such an interface was fabricated using carbon nanotubes (CNTs) as the catalyst support and palladium nanoparticles (Pd NPs) as the electrocatalysts. The Pd NPs/CNTs nanocomposite was synthesized using the ethylene glycol reduction method. It was characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, voltammetry, and impedance. On the Pd NPs/CNTs nanocomposite coated electrode, the oxidations of those liquid fuels occur similarly in two steps: the oxidations of freshly chemisorbed species in the forward (positive-potential) scan and then, in the reverse scan (negative-potential), the oxidations of the incompletely oxidized carbonaceous species formed during the forward scan. The oxidation charges were adopted to study their oxidation mechanisms and oxidation efficiencies. The oxidation efficiency follows the order of aldehyde (formaldehyde) > carboxylic acid (formic acid) > alcohols (ethanol > methanol > glycol > propanol). Such a Pd NPs/CNTs nanocomposite coated electrode is thus promising to be applied as the anode for the facilitation of direct fuel cells.

  20. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

    Science.gov (United States)

    Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

    2018-01-01

    We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

  1. Observation of hidden atomic order at the interface between Fe and topological insulator Bi2Te3.

    Science.gov (United States)

    Sánchez-Barriga, Jaime; Ogorodnikov, Ilya I; Kuznetsov, Mikhail V; Volykhov, Andrey A; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I; Koch, Roland J; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V

    2017-11-22

    To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi 2 Te 3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi 2 Te 3 at room temperature, the Fe atoms are ordered at the interface despite the surface disorder revealed by our scanning-tunneling microscopy images. We find that Fe occupies two different sites: a hollow adatom deeply relaxed into the Bi 2 Te 3 quintuple layers and an interstitial atom between the third (Te) and fourth (Bi) atomic layers. For both sites, our core-level photoemission spectra and density-functional theory calculations demonstrate simultaneous chemical bonding of Fe to both Te and Bi atoms. We further show that upon deposition of Fe up to a thickness of 20 nm, the Fe atoms penetrate deeper into the bulk forming a 2-5 nm interface layer containing FeTe. In addition, excessive Bi is pushed down into the bulk of Bi 2 Te 3 leading to the formation of septuple layers of Bi 3 Te 4 within a distance of ∼25 nm from the interface. Controlling the magnetic properties of the complex interface structures revealed by our work will be of critical importance when optimizing the efficiency of spin injection in TI-based devices.

  2. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

    International Nuclear Information System (INIS)

    Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

    2013-01-01

    Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

  3. Density of interface states, excess capacitance and series resistance in the metal-insulator-semiconductor (MIS) solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altindal, Semsettin; Tataroglu, Adem; Dokme, Ilbilge [Faculty of Arts and Sciences, Physics Department, Gazi University, 06500, Ankara (Turkey)

    2005-01-31

    Dark and illuminated current-voltage (I-V) characteristics of Al/SiO{sub x}/p-Si metal-insulator-semiconductor (MIS) solar cells were measured at room temperature. In addition to capacitance-voltage (C-V) and conductance-voltage (G-V), characteristics are studied at a wide frequency range of 1kHz-10MHz. The dark I-V characteristics showed non-ideal behavior with an ideal factor of 3.2. The density of interface states distribution profiles as a function of (E{sub ss}-E{sub v}) deduced from the I-V measurements at room temperature for the MIS solar cells on the order of 10{sup 13}cm{sup -2}eV{sup -1}. These interface states were responsible for the non-ideal behavior of I-V, C-V and G-V characteristics. Frequency dispersion in capacitance for MIS solar cells can be interpreted only in terms of interface states. The interface states can follow the a.c. signal and yield an excess capacitance, which depends on the relaxation time of interface states and the frequency of the a.c. signal. It was observed that the excess capacitance C{sub o} caused by an interface state decreases with an increase of frequency. The capacitances characteristics of MIS solar cells are affected not only in interface states but also series resistance. Analysis of this data indicated that the high interface states and series resistance leads to lower values of open-circuit voltage, short-circuit current density, and fill factor. Experimental results show that the location of interface states and series resistance have a significant effect on I-V, C-V and G-V characteristics.

  4. Metal/oxide/semiconductor interface investigated by monoenergetic positrons

    Science.gov (United States)

    Uedono, A.; Tanigawa, S.; Ohji, Y.

    1988-10-01

    Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

  5. Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

    Science.gov (United States)

    Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

    2018-01-01

    The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

  6. Surfaces and Interfaces of Magnetoelectric Oxide Systems

    Science.gov (United States)

    Cao, Shi

    Magnetoelectric materials Cr2O3, hexagonal LuFeO 3 and YbFeO3 are studied in this thesis. The surface of chromia (Cr2O3) has a surface electronic structure distinct from the bulk. Our work shows that placing a Cr2O3 single crystal into a single domain state will result in net Cr2O 3 spin polarization at the boundary, even in the presence of a gold overlayer. From the Cr 2p3/2 X-ray magnetic circular dichroism signal, there is clear evidence of interface polarization with overlayers of both Pd and Pt on chromia. Cobalt thin films on Cr2O3(0001) show larger magnetic contrast in magnetic force microscopy indicating enhancement of perpendicular anisotropy induced by Cr2O3. The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3(0001) surfaces has been investigated showing hole doping of few-layer graphene. Density functional theory calculations furthermore confirm the p-type nature of the graphene on top of chromia, and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. The surface termination and the nominal valence states for hexagonal LuFeO3 thin films were characterized. The stable surface terminates in a Fe-O layer. This is consistent wit the results of density functional calculations. The structural transition at about 1000 °C, from the hexagonal to the orthorhombic phase of LuFeO3, has been investigated in thin films of LuFeO3. The electronic structure for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured. Dramatic differences in both the spectral features and the linear dichroism are observed. We have also studied the ferrimagnetism in h-YbFeO3 by measuring the magnetization of Fe and Yb separately. The results directly show antialignment of magnetization of Yb and Fe ions in h-YbFeO3 at low temperature, with an exchange field on Yb of about 17 kOe. All ferrimagnets, by default, are magnetoelectrics. These findings directly

  7. Systematic study of metal-insulator-metal diodes with a native oxide

    Science.gov (United States)

    Donchev, E.; Gammon, P. M.; Pang, J. S.; Petrov, P. K.; Alford, N. McN.

    2014-10-01

    In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device's rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  8. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.

    2014-10-07

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  9. Defect Engineering and Interface Phenomena in Tin Oxide

    KAUST Repository

    Albar, Arwa

    2017-04-05

    The advance in transparent electronics requires high-performance transparent conducting oxide materials. The microscopic properties of these materials are sensitive to the presence of defects and interfaces and thus fundamental understanding is required for materials engineering. In this thesis, first principles density functional theory is used to investigate the possibility of tuning the structural, electronic and magnetic properties of tin oxide by means of defects and interfaces. Our aim is to reveal unique properties and the parameters to control them as well as to explain the origin of unique phenomena in oxide materials. The stability of native defect in tin monoxide (SnO) under strain is investigated using formation energy calculations. We find that the conductivity (which is controlled by native defects) can be switched from p-type to either n-type or undoped semiconducting by means of applied pressure. We then target inducing magnetism in SnO by 3d transition metal doping. We propose that V doping is efficient to realize spin polarization at high temperature. We discuss different tin oxide interfaces. Metallic states are found to form at the SnO/SnO2 interface with electronic properties that depend on the interface terminations. The origin of these states is explained in terms of charge transfer caused by chemical bonding and band alignment. For the SnO/SnO2 heterostructure, we observe the formation of a two dimensional hole gas at the interface, which is surprising as it cannot be explained by the standard polar catastrophe model. Thus, we propose a charge density discontinuity model to explain our results. The model can be generalized to other polar-polar interfaces. Motivated by technological applications, the electronic and structural properties of the MgO (100)/SnO2 (110) interface are investigated. Depending on the interface termination, we observe the formation of a two dimensional electron gas or spin polarized hole gas. Aiming to identify further

  10. a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

    Science.gov (United States)

    Peng, Jianping

    The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

  11. The electronic structure and metal-insulator transitions in vanadium oxides

    International Nuclear Information System (INIS)

    Mossanek, Rodrigo Jose Ochekoski

    2010-01-01

    The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

  12. Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in Sb2Te3/Bi2Te3 heterojunctions

    Science.gov (United States)

    Aramberri, H.; Muñoz, M. C.

    2017-05-01

    We investigate the effects of strain on the topological order of the Bi2Se3 family of topological insulators by ab initio first-principles methods. Strain can induce a topological phase transition and we present the phase diagram for the 3D topological insulators, Bi2Te3 , Sb2Te3 , Bi2Se3 , and Sb2Se3 , under combined uniaxial and biaxial strain. Their phase diagram is universal and shows metallic and insulating phases, both topologically trivial and nontrivial. In particular, uniaxial tension can drive the four compounds into a topologically trivial insulating phase. We propose a Sb2Te3/Bi2Te3 heterojunction in which a strain-induced topological interface state arises in the common gap of this normal insulator-topological insulator heterojunction. Unexpectedly, the interface state is confined in the topologically trivial subsystem and is physically protected from ambient impurities. It can be switched on or off by means of uniaxial strain and therefore Sb2Te3 /Bi2Te3 heterojunctions provide a topological system which hosts tunable robust helical interface states with promising spintronic applications.

  13. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  14. Transition metal oxide as anode interface buffer for impedance spectroscopy

    Science.gov (United States)

    Xu, Hui; Tang, Chao; Wang, Xu-Liang; Zhai, Wen-Juan; Liu, Rui-Lan; Rong, Zhou; Pang, Zong-Qiang; Jiang, Bing; Fan, Qu-Li; Huang, Wei

    2015-12-01

    Impedance spectroscopy is a strong method in electric measurement, which also shows powerful function in research of carrier dynamics in organic semiconductors when suitable mathematical physical models are used. Apart from this, another requirement is that the contact interface between the electrode and materials should at least be quasi-ohmic contact. So in this report, three different transitional metal oxides, V2O5, MoO3 and WO3 were used as hole injection buffer for interface of ITO/NPB. Through the impedance spectroscopy and PSO algorithm, the carrier mobilities and I-V characteristics of the NPB in different devices were measured. Then the data curves were compared with the single layer device without the interface layer in order to investigate the influence of transitional metal oxides on the carrier mobility. The careful research showed that when the work function (WF) of the buffer material was just between the work function of anode and the HOMO of the organic material, such interface material could work as a good bridge for carrier injection. Under such condition, the carrier mobility measured through impedance spectroscopy should be close to the intrinsic value. Considering that the HOMO (or LUMO) of most organic semiconductors did not match with the work function of the electrode, this report also provides a method for wide application of impedance spectroscopy to the research of carrier dynamics.

  15. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

    Science.gov (United States)

    Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul M; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried

    2017-03-29

    A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

  16. First principles studies of complex oxide surfaces and interfaces

    International Nuclear Information System (INIS)

    Noguera, Claudine; Finocchi, Fabio; Goniakowski, Jacek

    2004-01-01

    Oxides enter our everyday life and exhibit an impressive variety of physical and chemical properties. The understanding of their behaviour, which is often determined by the electronic and atomic structures of their surfaces and interfaces, is a key question in many fields, such as geology, environmental chemistry, catalysis, thermal coatings, microelectronics, and bioengineering. In the last decade, first principles methods, mainly those based on the density functional theory, have been frequently applied to study complex oxide surfaces and interfaces, complementing the experimental observations. In this work, we discuss some of these contributions, with emphasis on several issues that are especially important when dealing with oxides: the local electronic structure at interfaces, and its connection with chemical reactivity; the charge redistribution and the bonding variations, in relation to screening properties; and the possibility of bridging the gap between model and real systems by taking into account the chemical environments and the effect of finite temperatures, and by performing simulations on systems of an adequate (large) size

  17. Investigation of self-powered gamma flux detectors with Lead(II) oxide serving as both emitter and insulator

    International Nuclear Information System (INIS)

    Shi, H.; Yue, S.; Jonkmans, G.; Sur, B.; Hilborn, J.

    2010-01-01

    The use of Lead(II) oxide as the electron-emitting component and the insulating component of self-powered flux detectors is a concept that had not been previously explored. Detectors constructed from various combinations of electrodes (stainless steel, Al, Pb, and W) and insulating materials (Al 2 O 3 and PbO) were irradiated in a 427 Gy/h gamma field. Although high gamma sensitivities were achieved, PbO did not prove to be a strong emitter of gamma-induced electrons. Nevertheless, PbO did serve as a better insulator than one that is currently in use, namely alumina. (author)

  18. Nanostructured hydrophobic DC sputtered inorganic oxide coating for outdoor glass insulators

    Energy Technology Data Exchange (ETDEWEB)

    Dave, V. [Department of Electrical Engineering, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Institute Instrumentation Centre, Indian Institute of Technology, Roorkee, Roorkee 247667 (India); Gupta, H.O. [Department of Electrical Engineering, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Chandra, R., E-mail: ramesfic@gmail.com [Institute Instrumentation Centre, Indian Institute of Technology, Roorkee, Roorkee 247667 (India)

    2014-03-01

    Graphical abstract: - Highlights: • Deposition of contamination on outdoor glass insulators and its physical and economical consequences were discussed. • Synthesis of nanostructured hydrophobic HfO{sub 2} film on glass as a remedial measure by varying DC sputtering power. • Investigated and correlated structural, optical, electrical and hydrophobic properties of HfO{sub 2} films with respect to power. • Optimum results were obtained at a 50 W DC sputtering power. - Abstract: We report the structural, optical and electrical properties of nanostructured hydrophobic inorganic hafnium oxide coating for outdoor glass insulator using DC sputtering technique to combat contamination problem. The properties were studied as a function of DC power. The characterization of the films was done using X-ray diffraction, EDS, surface profilometer, AFM, impedance analyser and water contact angle measurement system. The DC power was varied from 30 to 60 W and found to have a great impact on the properties of hafnium oxide. All the deposited samples were polycrystalline with nanostructured hydrophobic surfaces. The intensity of crystallinity of the film was found to be dependent on sputtering power and hydrophobicity was correlated to the nanoscale roughness of the films. The optical property reveals 80% average transmission for all the samples. The refractive index was found in the range of 1.85–1.92, near to the bulk value. The band gap calculated from transmission data was >5.3 eV for all deposited samples ensuring dielectric nature of the films. Surface energy calculated by two methods was found minimum for the film deposited at 50 W sputtering power. The resistivity was also high enough (∼10{sup 4} Ω cm) to hinder the flow of leakage current through the film. The dielectric constant (ε) was found to be thickness dependent and also high enough (ε{sub max} = 23.12) to bear the large electric field of outdoor insulators.

  19. Enhancing CO2 Electroreduction with the Metal-Oxide Interface.

    Science.gov (United States)

    Gao, Dunfeng; Zhang, Yi; Zhou, Zhiwen; Cai, Fan; Zhao, Xinfei; Huang, Wugen; Li, Yangsheng; Zhu, Junfa; Liu, Ping; Yang, Fan; Wang, Guoxiong; Bao, Xinhe

    2017-04-26

    The electrochemical CO 2 reduction reaction (CO 2 RR) typically uses transition metals as the catalysts. To improve the efficiency, tremendous efforts have been dedicated to tuning the morphology, size, and structure of metal catalysts and employing electrolytes that enhance the adsorption of CO 2 . We report here a strategy to enhance CO 2 RR by constructing the metal-oxide interface. We demonstrate that Au-CeO x shows much higher activity and Faradaic efficiency than Au or CeO x alone for CO 2 RR. In situ scanning tunneling microscopy and synchrotron-radiation photoemission spectroscopy show that the Au-CeO x interface is dominant in enhancing CO 2 adsorption and activation, which can be further promoted by the presence of hydroxyl groups. Density functional theory calculations indicate that the Au-CeO x interface is the active site for CO 2 activation and the reduction to CO, where the synergy between Au and CeO x promotes the stability of key carboxyl intermediate (*COOH) and thus facilitates CO 2 RR. Similar interface-enhanced CO 2 RR is further observed on Ag-CeO x , demonstrating the generality of the strategy for enhancing CO 2 RR.

  20. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  1. Zirconium Micro-Arc Oxidation as a Method for Producing Heat Insulation Elements in Spacecraft

    Directory of Open Access Journals (Sweden)

    V. K. Shatalov

    2014-01-01

    Full Text Available Application of coatings on the surface of materials as well as their composition and structure control in the near-surface layer enables us to use properties of base material and modified layers in the most rational and profitable way and save expensive and rare metals and alloys.The space telescope of T-170M will be the main tool of the international space observatory "Spektr-UF".It is being understood that the main mirror shade, which is in the outer space and has a considerable height will act as a radiator cooling a unit (cage of the main mirror. Therefore it is necessary to create heat insulation between the shade of the main mirror and the frame of the main mirror unit. From the thermal calculations a detail to provide heat insulation must possess thermal conductivity, at most, 2,5 and a conditional limit of fluidity for compression, at least, 125 MPas to ensure that the shade diaphragms position of the main mirror is stable with respect to the optical system of telescope.Considering that oxide of zirconium possesses one of the lowest thermal conductivities among oxides of metals, it is offered to use zirconium, as a material of base, and to put the MAO-covering (micro-arc oxide on its surface.As a result of studying the features of MAO-coverings on zirconium it is:1 found that the composite material consisting of zirconium and MAO-covering on it, has low thermal conductivity (less than 2 , and thus, because of small oxide layer thickness against the thickness of base material, possesses the mechanical properties which are slightly different from the pure zirconium ones;2 found that the composite material possesses the low gas release, allowing its use in the outer space conditions; the material processed in two electrolytes i.e. phosphate and acid ones has the lowest gas release;3 found that with growing thickness of MAO-covering its porosity decreases, thus the average pore diameter grows thereby leading to increasing thermal

  2. High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

    Science.gov (United States)

    Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2018-06-12

    Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

  3. Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

    Science.gov (United States)

    Bidzinski, Piotr; Miczek, Marcin; Adamowicz, Boguslawa; Mizue, Chihoko; Hashizume, Tamotsu

    2011-04-01

    The influence of interface state density and bulk carrier lifetime on the dependencies of photocapacitance versus wide range of gate bias (-0.1 to -3 V) and light intensity (109 to 1020 photon cm-2 s-1) was studied for metal/insulator/n-GaN UV light photodetector by means of numerical simulations. The light detection limit and photocapacitance saturation were analyzed in terms of the interface charge and interface Fermi level for electrons and holes and effective interface recombination velocity. It was proven that the excess carrier recombination through interface states is the main reason of photocapacitance signal quenching. It was found that the photodetector can work in various modes (on-off or quantitative light measurement) adjusted by the gate bias. A comparison between experimental data and theoretical capacitance-light intensity characteristics was made. A new method for the determination of the interface state density distribution from capacitance-voltage-light intensity measurements was also proposed.

  4. Engineering magnetism at functional oxides interfaces: manganites and beyond.

    Science.gov (United States)

    Yi, Di; Lu, Nianpeng; Chen, Xuegang; Shen, Shengchun; Yu, Pu

    2017-11-08

    The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

  5. Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

    2003-01-01

    The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

  6. Variable range hopping in TiO2 insulating layers for oxide electronic devices

    Directory of Open Access Journals (Sweden)

    Y. L. Zhao

    2012-03-01

    Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

  7. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  8. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN: Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, T. [Kansas State Univ., Manhattan, KS (United States); Wei, D. [Kansas State Univ., Manhattan, KS (United States); Nepal, N. [Naval Research Lab. (NRL), Washington, DC (United States); Garces, N. Y. [Naval Research Lab. (NRL), Washington, DC (United States); Hite, J. K. [Naval Research Lab. (NRL), Washington, DC (United States); Meyer, H. M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Eddy, C. R. [Naval Research Lab. (NRL), Washington, DC (United States); Baker, Troy [Nitride Solutions, Wichita, KS (United States); Mayo, Ashley [Nitride Solutions, Wichita, KS (United States); Schmitt, Jason [Nitride Solutions, Wichita, KS (United States); Edgar, J. H. [Kansas State Univ., Manhattan, KS (United States)

    2014-02-24

    We report the benefits of dry oxidation of n -GaN for the fabrication of metal-oxide-semiconductor structures. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 °C to produce thin, smooth GaOx layers. Moreover, the GaN sample oxidized for 30 minutes had the best properties. Its surface roughness (0.595 nm) as measured by atomic force microscopy (AFM) was the lowest. Capacitance-voltage measurements showed it had the best saturation in accumulation region and the sharpest transition from accumulation to depletion regions. Under gate voltage sweep, capacitance-voltage hysteresis was completely absent. The interface trap density was minimum (Dit = 2.75×1010 cm–2eV–1) for sample oxidized for 30 mins. These results demonstrate a high quality GaOx layer is beneficial for GaN MOSFETs.

  9. Gadolinium oxide coated fully depleted silicon-on-insulator transistors for thermal neutron dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu; Gouker, Pascale M.

    2013-09-01

    Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd{sub 2}O{sub 3} than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly with neutron dose, consistent with increasing positive charge in the SOI buried oxide layer generated by ionization from high energy {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. The measured neutron sensitivity is approximately 1/6 the maximum theoretical value, possibly due to electron–hole recombination or conversion electron loss in interconnect wiring above the transistors. -- Highlights: • A novel Gd{sub 2}O{sub 3} coated FDSOI MOSFET thermal neutron dosimeter is presented. • Dosimeter can detect charges generated from {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. • Measured neutron sensitivity is comparable to that calculated theoretically. • Dosimeter requires zero power during operation, enabling new application areas.

  10. Dirac topological insulator in the dz2 manifold of a honeycomb oxide

    Science.gov (United States)

    Lado, J. L.; Pardo, V.

    2016-09-01

    We show by means of ab initio calculations and tight-binding modeling that an oxide system based on a honeycomb lattice can sustain topologically nontrivial states if a single orbital dominates the spectrum close to the Fermi level. In such a situation, the low-energy spectrum is described by two Dirac equations that become nontrivially gapped when spin-orbit coupling (SOC) is switched on. We provide one specific example but the recipe is general. We discuss a realization of this starting from a conventional spin-1/2 honeycomb antiferromagnet whose states close to the Fermi energy are dz2 orbitals. Switching off magnetism by atomic substitution and ensuring that the electronic structure becomes two-dimensional is sufficient for topologicality to arise in such a system. By deriving a tight-binding Wannier Hamiltonian, we find that the gap in such a model scales linearly with SOC, opposed to other oxide-based topological insulators, where smaller gaps tend to appear by construction of the lattice. We show that the quantum spin Hall state in this system survives in the presence of off-plane magnetism and the orbital magnetic field and we discuss its Landau level spectra, showing that our recipe provides a dz2 realization of the Kane-Mele model.

  11. Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jianqiu, E-mail: jianqiu@vt.edu [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Tea, Eric; Li, Guanchen [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Hin, Celine [Department of Mechanical Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road - MC 0238, Blacksburg, VA 24061 (United States); Department of Material Science and Engineering, Virginia Tech, Goodwin Hall, 635 Prices Fork Road-MC 0238, Blacksburg, VA 24061 (United States)

    2017-06-01

    Highlights: • Hydrogen release process at the Al/SiO{sub 2} metal-oxide interface has been investigated. • A mathematical model that estimates the hydrogen release potential has been proposed. • Al atoms, Al−O bonds, and Si−Al bonds are the major hydrogen traps at the Al/SiO{sub 2} interface. • Hydrogen atoms are primarily release from Al−H and O−H bonds at the Al/SiO{sub 2} metal-oxide interface. - Abstract: The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been extensively studied at Si/SiO{sub 2} interfaces but its characteristics at metal-silica interfaces remain unclear. In this study, we performed Density Functional Theory (DFT) calculations to study the hydrogen release mechanism at the typical Al/SiO{sub 2} metal-oxide interface. We found that interstitial hydrogen atoms can break interfacial Al−Si bonds, passivating a Si sp{sup 3} orbital. Interstitial hydrogen atoms can also break interfacial Al−O bonds, or be adsorbed at the interface on aluminum, forming stable Al−H−Al bridges. We showed that hydrogenated O−H, Si−H and Al−H bonds at the Al/SiO{sub 2} interfaces are polarized. The resulting bond dipole weakens the O−H and Si−H bonds, but strengthens the Al−H bond under the application of a positive bias at the metal gate. Our calculations indicate that Al−H bonds and O−H bonds are more important than Si−H bonds for the hydrogen release process.

  12. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  13. Origin of interface states and oxide charges generated by ionizing radiation

    International Nuclear Information System (INIS)

    Sah, C.T.

    1976-01-01

    The randomly located trivalent silicon atoms are shown to account for the thermally generated interface states at the SiO 2 -Si interface. The interface state density is greatly reduced in water containing ambients at low temperatures (450 0 C) by forming trivalent silicon hydroxide bonds. Interface states are regenerated when the /triple bond/Si-OH bonds are broken by ionizing radiation and the OH ions are drifted away. In the bulk of the oxide film, the trivalent silicon and the interstitial oxygen donor centers are shown to be responsible for the heat and radiation generated positive space charge build-up (oxide charge) in thermally grown silicon oxide

  14. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  15. Segregation across the metal/oxide interface occurring during oxidation at high temperatures of diluted iron based alloys

    International Nuclear Information System (INIS)

    Geneve, D.; Rouxel, D.; Weber, B.; Confente, M.

    2006-01-01

    Industrial steels being elaborated in air at high temperature oxidize and cover with a complex oxide layer. The oxidation reaction drastically alters the surface composition. Such modifications have been investigated, in this work, by Auger Electron Spectroscopy (AES) using an original method to characterize the composition of the metal/oxide interfaces. Analysis of the concentration gradients across the interfaces allows to better understand how the alloy elements contribute to the oxidation process. The development of new alloy phases, the interdependencies between elements and the diffusion of different species are discussed considering thermodynamic properties of each element

  16. Oxide nanoparticles in an Al-alloyed oxide dispersion strengthened steel: crystallographic structure and interface with ferrite matrix

    DEFF Research Database (Denmark)

    Zhang, Zhenbo; Pantleon, Wolfgang

    2017-01-01

    Oxide nanoparticles are quintessential for ensuring the extraordinary properties of oxide dispersion strengthened (ODS) steels. In this study, the crystallographic structure of oxide nanoparticles, and their interface with the ferritic steel matrix in an Al-alloyed ODS steel, i.e. PM2000, were...

  17. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  18. High-energy photoemission studies of oxide interfaces

    Science.gov (United States)

    Claessen, Ralph

    2015-03-01

    The interfaces of complex oxide heterostructures can host novel quantum phases not existing in the bulk of the constituents, with the high-mobility 2D electron system (2DES) in LaAlO3/SrTiO3 (LAO/STO) representing a prominent example. Despite extensive research the origin of the 2DES and its unusual properties - including the supposed coexistence of superconductivity and ferromagnetism - are still a matter of intense debate. Photoelectron spectroscopy, recently extended into the soft (SX-ARPES) and hard (HAXPES) X-ray regime, is a powerful method to provide detailed insight into the electronic structure of these heterostructures and, in particular, of the buried interface. This includes the identification of the orbital character of the 2DES as well as the determination of vital band structure information, such as band alignment, band bending, and even k-resolved band dispersions and Fermi surface topology. Moreover, resonant photoemission at the Ti L-edge reveals the existence of two different species of Ti 3d states, localized and itinerant, which can be distinguished and identified by their different resonance behavior. The role of oxygen vacancies is studied by controlled in-situ oxidation, which allows us to vary the composition from fully stoichiometric to strongly O-deficient. By comparison to free STO surfaces we can thus demonstrate that the metallicity of the heteointerfaces is intrinsic, i . e . it persists even in the absence of O defects. I will discuss our photoemission results on LAO/STO heterostructures in both (100) and (111) orientation as well as on the related system γ-Al2O3/STO(100), which also hosts a 2DES with an even higher mobility. Work in collaboration with J. Mannhart (MPI-FKF, Stuttgart), N. Pryds (TU Denmark), G. Rijnders (U Twente), S. Suga (U Osaka), M. Giorgoi (BESSY, HZB), W. Drube (DESY Photon Science), V.N. Strocov (Swiss Light Source), J. Denlinger (Advanced Light Source, LBNL), and T.-L. Lee (Diamond Light Source). Support by

  19. Accelerated thermal and radiation-oxidation combined degradation of electric cable insulation materials

    International Nuclear Information System (INIS)

    Yagi, Toshiaki; Seguchi, Tadao; Yoshida, Kenzo

    1986-03-01

    For the development of accelerated testing methodology to estimate the life time of electric cable, which is installed in radiation field such as a nuclear reactor containment vessel, radiation and thermal combined degradation of cable insulation and jacketing materials was studied. The materials were two types of formulated polyethylene, ethylene-propylene rubber, Hypalon, and Neoprene. With Co-60 γ-rays the materials were irradiated up to 0.5 MGy under vacuum and in oxygen under pressure, then exposed to thermal aging at elevated temperature in oxygen. The degradation was investigated by the tensile test, gelfraction, and swelling measurements. The thermal degradation rate for each sample increases with increase of oxygen concentration, i.e. oxygen pressure, during the aging, and tends to saturate above 0.2 MPa of oxygen pressure. Then, the effects of irradiation and the temperature on the thermal degradation rate were investigated at the oxygen pressure of 0.2 MPa in the temperature range from 110 deg C to 150 deg C. For all of samples irradiated in oxygen, the following thermal degradation rate was accelerated by several times comparing with unirradiated samples, while the rate of thermal degradation for the sample except Neoprene irradiated under vacuum was nearly equal to that of unirradiated one. By the analysis of thermal degradation rate against temperature using Arrhenius equation, it was found that the activation energy tends to decrease for the samples irradiated in oxidation condition. (author)

  20. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Science.gov (United States)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-08-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  1. Direct plutonium oxide reduction/electrorefining interface program

    International Nuclear Information System (INIS)

    Baldwin, C.E.; Berry, J.W.; Giebel, R.E.; Long, J.L.; Moser, W.S.; Navratil, J.D.; Tibbitts, S.F.

    1986-01-01

    Research test work and production data evaluation were performed by the Direct Oxide Reduction (DOR)/Electrorefining (ER) Interface Task Team to determine the cause for poor efficiency and yields during ER of DOR metal product. Production data and preliminary test results provided a working hypothesis. Extremely high loadings of impurities (whatever their exact source and identity) in the DOR product metal may lead to failure of the metal to become a molten anode at ER operating temperatures. Moderate impurity levels permit attainment of a molten anode, but lead to low yields because of premature anode solidification. The test results did not conclusively prove the hypothesis or identify specific mechanisms, but were qualitatively supportive. By stirring the molten anode metal pool, as well as the molten salt phase, generally good ER runs were obtained with both DOR and non-DOR feeds. These limited preliminary results suggest that anode stirring decreases the sensitivity of the ER process to DOR-related impurities. Suggested corrective measures included: (1) minimizing impurities in DOR feed to ER and (2) continued evaluation of anode stirring along with run termination by back-EMF measurements. 1 ref., 3 figs., 13 tabs

  2. Non-uniform Solute Segregation at Semi-Coherent Metal/Oxide Interfaces

    Science.gov (United States)

    Choudhury, Samrat; Aguiar, Jeffery A.; Fluss, Michael J.; Hsiung, Luke L.; Misra, Amit; Uberuaga, Blas P.

    2015-08-01

    The properties and performance of metal/oxide nanocomposites are governed by the structure and chemistry of the metal/oxide interfaces. Here we report an integrated theoretical and experimental study examining the role of interfacial structure, particularly misfit dislocations, on solute segregation at a metal/oxide interface. We find that the local oxygen environment, which varies significantly between the misfit dislocations and the coherent terraces, dictates the segregation tendency of solutes to the interface. Depending on the nature of the solute and local oxygen content, segregation to misfit dislocations can change from attraction to repulsion, revealing the complex interplay between chemistry and structure at metal/oxide interfaces. These findings indicate that the solute chemistry at misfit dislocations is controlled by the dislocation density and oxygen content. Fundamental thermodynamic concepts - the Hume-Rothery rules and the Ellingham diagram - qualitatively predict the segregation behavior of solutes to such interfaces, providing design rules for novel interfacial chemistries.

  3. Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta; Tripathi, S.K. [Panjab University, Centre of Advanced Study in Physics, Department of Physics, Chandigarh (India)

    2013-11-15

    This paper presents the fabrication and characterization of Al/PVA:n-CdS (MS) and Al/Al{sub 2}O{sub 3}/PVA:n-CdS (MIS) diode. The effects of interfacial insulator layer, interface states (N{sub ss}) and series resistance (R{sub s}) on the electrical characteristics of Al/PVA:n-CdS structures have been investigated using forward and reverse bias I-V, C-V, and G/w-V characteristics at room temperature. Al/PVA:n-CdS diode is fabricated with and without insulator Al{sub 2}O{sub 3} layer to explain the effect of insulator layer on main electrical parameters. The values of the ideality factor (n), series resistance (R{sub s}) and barrier height ({phi} {sub b}) are calculated from ln(I) vs. V plots, by the Cheung and Norde methods. The energy density distribution profile of the interface states is obtained from the forward bias I-V data by taking into account the bias dependence ideality factor (n(V)) and effective barrier height ({phi} {sub e}) for MS and MIS diode. The N{sub ss} values increase from mid-gap energy of CdS to the bottom of the conductance band edge for both MS and MIS diode. (orig.)

  4. Oxidation-resistant interface coatings for Nicalon/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Stinton, D.P.; Besmann, T.M.; Lowden, R.A. [Oak Ridge National Lab., TN (United States); Liaw, P.K.; Shanmugham, S. [Univ. of Tennessee, Knoxville, TN (United States)

    1997-12-01

    Nicalon/SiC composites with thin C and C/oxide/C interfaces were fabricated. The oxide layers, mullite and Al{sub 2}O{sub 3}-TiO{sub 2}, were deposited by a sol-gel process, while the C layer was deposited by a chemical vapor infiltration method. The fabricated composites were flexure tested in both as-processed and oxidized conditions. Composites with C and C/oxide/C interfaces retained graceful failure even after 500 h oxidation at 1000 C, but with reduced flexural strengths.

  5. Analysis of polymer/oxide interfaces under ambient conditions - An experimental perspective

    Science.gov (United States)

    González-Orive, A.; Giner, I.; de los Arcos, T.; Keller, A.; Grundmeier, G.

    2018-06-01

    In many different hybrid materials and materials composites polymers adhere to bulk oxides or oxide covered metal. The formed polymer/oxide interfaces are of crucial importance for the functionality and durability of such complex materials. Especially, under humid and corrosive conditions such interfaces tend to degrade due to permeability of polymers for water, the high adsorption energy of water on oxide surfaces and even corrosion processes of the metal. Different experimental studies considered such interfaces ranging from spectroscopy to electrochemical analysis. However, it is still a challenge to understand the complex interaction especially under non-ideal ambient conditions. The perspective article presents an overview on the existing experimental approaches and considers most recent experimental developments with regard to their potential applications in the area of polymer/oxide interfaces in the future.

  6. Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

    Science.gov (United States)

    Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

    2018-05-01

    Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

  7. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio

    2013-07-17

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid functional to determine the electronic structure. This approach offers the distinct advantage of accessing both the metallic and insulating multilayers on a parameter-free equal footing. As compared to calculations based on semilocal GGA functionals, our hybrid functional calculations lead to a considerably increased band gap for the insulating systems. The details of the electronic structure show substantial deviations from those obtained by GGA calculations. This casts severe doubts on all previous results based on semilocal functionals. In particular, corrections using rigid band shifts (“scissors operator”) cannot lead to valid results.

  8. The model of metal-insulator phase transition in vanadium oxide

    International Nuclear Information System (INIS)

    Vikhnin, V.S.; Lysenko, S.; Rua, A.; Fernandez, F.; Liu, H.

    2005-01-01

    Thermally induced metal-insulator phase transitions (PT) in VO 2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO 2 metallic phase is considered as basis of the first order metal-insulator PT in VO 2 . The charge transfer is treated as an order parameter

  9. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

    Science.gov (United States)

    Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

    1996-02-01

    Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

  10. Oxide nanoparticles in an Al-alloyed oxide dispersion strengthened steel: crystallographic structure and interface with ferrite matrix

    Science.gov (United States)

    Zhang, Zhenbo; Pantleon, Wolfgang

    2017-07-01

    Oxide nanoparticles are quintessential for ensuring the extraordinary properties of oxide dispersion strengthened (ODS) steels. In this study, the crystallographic structure of oxide nanoparticles, and their interface with the ferritic steel matrix in an Al-alloyed ODS steel, i.e. PM2000, were systematically investigated by high-resolution transmission electron microscopy. The majority of oxide nanoparticles were identified to be orthorhombic YAlO3. During hot consolidation and extrusion, they develop a coherent interface and a near cuboid-on-cube orientation relationship with the ferrite matrix in the material. After annealing at 1200 °C for 1 h, however, the orientation relationship between the oxide nanoparticles and the matrix becomes arbitrary, and their interface mostly incoherent. Annealing at 1300 °C leads to considerable coarsening of oxide nanoparticles, and a new orientation relationship of pseudo-cube-on-cube between oxide nanoparticles and ferrite matrix develops. The reason for the developing interfaces and orientation relationships between oxide nanoparticles and ferrite matrix under different conditions is discussed.

  11. Oxidation-resistant interface coatings for SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Stinton, D.P.; Kupp, E.R.; Hurley, J.W.; Lowden, R.A. [Oak Ridge National Lab., TN (United States)] [and others

    1996-08-01

    The characteristics of the fiber-matrix interfaces in ceramic matrix composites control the mechanical behavior of these composites. Finite element modeling (FEM) was performed to examine the effect of interface coating modulus and coefficient of thermal expansion on composite behavior. Oxide interface coatings (mullite and alumina-titania) produced by a sol-gel method were chosen for study as a result of the FEM results. Amorphous silicon carbide deposited by chemical vapor deposition (CVD) is also being investigated for interface coatings in SiC-matrix composites. Processing routes for depositing coatings of these materials were developed. Composites with these interfaces were produced and tested in flexure both as-processed and after oxidation to examine the suitability of these materials as interface coatings for SiC/SiC composites in fossil energy applications.

  12. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    OpenAIRE

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ_ with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  13. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    International Nuclear Information System (INIS)

    Angermann, Heike

    2014-01-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D it (E), and density D it,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on

  14. Solvothermal synthesis and electrical conductivity model for the zinc oxide-insulated oil nanofluid

    International Nuclear Information System (INIS)

    Shen, L.P.; Wang, H.; Dong, M.; Ma, Z.C.; Wang, H.B.

    2012-01-01

    A new kind of nanofluid, ZnO-insulated oil nanofluid was prepared from ZnO nanoparticles synthesized by solvothermal method. Electrical property measurement shows that the electrical conductivity increases by 973 times after adding 0.75% volumetric fraction of ZnO nanoparticles into the insulated oil. A linear dependence of the electrical conductivity on the volumetric fraction has been observed, while the temperature dependence of the electrical conductivity reveals a nonlinear relationship. An electrical conductivity model is established for the nanofluid by considering both the Brownian motion and electrophoresis of the ZnO nanoparticles. -- Highlights: ► Stable ZnO-insulated oil nanofluid was successfully prepared. ► The electrical conductivity of the ZnO nanofluid is investigated. ► A new model is established to explain the electrical properties of the nanofluid.

  15. Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

    Science.gov (United States)

    Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

    2018-03-01

    Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

  16. Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

    Science.gov (United States)

    Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

    2015-05-26

    Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

  17. Interface characterization of InSb MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

    1982-03-26

    The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

  18. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  19. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Science.gov (United States)

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  20. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  1. Hydrogen interactions with silicon-on-insulator materials

    NARCIS (Netherlands)

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously

  2. Manganese Driven Carbon Oxidation along Oxic-Anoxic Interfaces in Forest Soils

    Science.gov (United States)

    Jones, M. E.; Keiluweit, M.

    2017-12-01

    Soils are the largest and most dynamic terrestrial carbon pool, storing a total of 3000 Pg of C - more than the atmosphere and biosphere combined. Because microbial oxidation determines the proportion of carbon that is either stored in the soil or emitted as climate active CO2, its rate directly impacts the global carbon cycle. Recently, a strong correlation between oxidation rates and manganese (Mn) content has been observed in forest soils globally, leading researchers conclude that Mn "is the single main factor governing" the oxidation of plant-derived particulate organic carbon (POC). Many soils are characterized by steep oxygen gradients, forming oxic-anoxic transitions that enable rapid redox cycling of Mn. Oxic-anoxic interfaces have been shown to promote fungal Mn oxidation and the formation of ligand-stabilized Mn(III), which ranks second only to superoxide as the most powerful oxidizing agent in the environment. Here we examined fungal Mn(III) formation along redox gradients in forest soils and their impact on POC oxidation rates. In both field and laboratory settings, oxic-anoxic transition zones showed the greatest Mn(III) concentrations, along with enhanced fungal growth, oxidative potential, production of soluble oxidation products, and CO2 production. Additional electrochemical and X-ray (micro)spectroscopic analyses indicated that oxic-anoxic interfaces represent ideal niches for fungal Mn(III) formation, owing to the ready supply of Mn(II), ligands and O2. Combined, our results suggest that POC oxidation relies on fungal Mn cycling across oxic-anoxic interfaces to produce Mn(III) based oxidants. Because predicted changes in the frequency and timing of precipitation dramatically alter soil moisture regimes in forest soils, understanding the mechanistic link between Mn cycling and carbon oxidation along oxic-anoxic interfaces is becoming increasingly important.

  3. Design and development of polyphenylene oxide foam as a reusable internal insulation for LH2 tanks

    Science.gov (United States)

    1975-01-01

    Material specification and fabrication process procedures for foam production are presented. The properties of mechanical strength, modulus of elasticity, density and thermal conductivity were measured and related to foam quality. Properties unique to the foam such as a gas layer insulation, density gradient parallel to the fiber direction, and gas flow conductance in both directions were correlated with foam quality. Inspection and quality control tests procedures are outlined and photographs of test equipment and test specimens are shown.

  4. Metal/silicon Interfaces and Their Oxidation Behavior - Photoemission Spectroscopy Analysis.

    Science.gov (United States)

    Yeh, Jyh-Jye

    Synchrotron radiation photoemission spectroscopy was used to study Ni/Si and Au/Si interface properties on the atomic scale at room temperature, after high temperature annealing and after oxygen exposures. Room temperature studies of metal/Si interfaces provide background for an understanding of the interface structure after elevated temperature annealing. Oxidation studies of Si surfaces covered with metal overlayers yield insight about the effect of metal atoms in the Si oxidation mechanisms and are useful in the identification of subtle differences in bonding relations between atoms at the metal/Si interfaces. Core level and valence band spectra with variable surface sensitivities were used to study the interactions between metal, Si, and oxygen for metal coverages and oxide thickness in the monolayer region. Interface morphology at the initial stage of metal/Si interface formation and after oxidation was modeled on the basis of the evolutions of metal and Si signals at different probing depths in the photoemission experiment. Both Ni/Si and Au/Si interfaces formed at room temperature have a diffusive region at the interface. This is composed of a layer of metal-Si alloy, formed by Si outdiffusion into the metal overlayer, above a layer of interstitial metal atoms in the Si substrate. Different atomic structures of these two regions at Ni/Si interface can account for the two different growth orientations of epitaxial Ni disilicides on the Si(111) surface after thermal annealing. Annealing the Au/Si interface at high temperature depletes all the Au atoms except for one monolayer of Au on the Si(111) surface. These phenomena are attributed to differences in the metal-Si chemical bonding relations associated with specific atomic structures. After oxygen exposures, both the Ni disilicide surface and Au covered Si surfaces (with different coverages and surface orderings) show silicon in higher oxidation states, in comparison to oxidized silicon on a clean surface

  5. Interface strength and degradation of adhesively bonded porous aluminum oxides

    DEFF Research Database (Denmark)

    T. Abrahami, Shoshan; M. M. de Kok, John; Gudla, Visweswara Chakravarthy

    2017-01-01

    For more than six decades, chromic acid anodizing has been the main step in the surface treatment of aluminum for adhesivelybonded aircraft structures. Soon this process, known for producing a readily adherent oxide with an excellent corrosion resistance,will be banned by strict international....... The relationship between the anodizing conditions insulfuric and mixtures of sulfuric and phosphoric acid electrolytes and the formation and durability of bonding under variousenvironmental conditions was investigated. Scanning electron microscopy was used to characterize the oxide features. Selectedspecimens were...... studied with transmission electron microscopy coupled with energy-dispersive X-ray spectroscopy to measureresin concentration within structurally different porous anodic oxide layers as a function of depth. Results show that there are twocritical morphological aspects for strong and durable bonding. First...

  6. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  7. Chemical reaction at ferromagnet/oxide interface and its influence on anomalous Hall effect

    International Nuclear Information System (INIS)

    Liu, Yi-Wei; Teng, Jiao; Zhang, Jing-Yan; Liu, Yang; Chen, Xi; Li, Xu-Jing; Feng, Chun; Wang, Hai-Cheng; Li, Ming-Hua; Yu, Guang-Hua; Wu, Zheng-Long

    2014-01-01

    Chemical reactions at the ferromagnet/oxide interface in [Pt/Fe] 3 /MgO and [Pt/Fe] 3 /SiO 2 multilayers before and after annealing were investigated by X-ray photoelectron spectroscopy. The results show that Fe atoms at the Fe/MgO interface were completely oxidized in the as-grown state and significantly deoxidized after vacuum annealing. However, only some of the Fe atoms at the Fe/SiO 2 interface were oxidized and rarely deoxidized after annealing. The anomalous Hall effect was modified by this interfacial chemical reaction. The saturation anomalous Hall resistance (R xy ) was greatly increased in the [Pt/Fe] 3 /MgO multilayers after annealing and was 350% higher than that in the as-deposited film, while R xy of the [Pt/Fe] 3 /SiO 2 multilayer only increased 10% after annealing.

  8. Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures

    KAUST Repository

    Li, Meng; Xie, De-Gang; Ma, Evan; Li, Ju; Zhang, Xixiang; Shan, Zhi-Wei

    2017-01-01

    Hydrogen can facilitate the detachment of protective oxide layer off metals and alloys. The degradation is usually exacerbated at elevated temperatures in many industrial applications; however, its origin remains poorly understood. Here by heating hydrogenated aluminium inside an environmental transmission electron microscope, we show that hydrogen exposure of just a few minutes can greatly degrade the high temperature integrity of metal–oxide interface. Moreover, there exists a critical temperature of ∼150 °C, above which the growth of cavities at the metal–oxide interface reverses to shrinkage, followed by the formation of a few giant cavities. Vacancy supersaturation, activation of a long-range diffusion pathway along the detached interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this behaviour. These results enrich the understanding of hydrogen-induced interfacial failure at elevated temperatures.

  9. Effect of hydrogen on the integrity of aluminium–oxide interface at elevated temperatures

    KAUST Repository

    Li, Meng

    2017-02-20

    Hydrogen can facilitate the detachment of protective oxide layer off metals and alloys. The degradation is usually exacerbated at elevated temperatures in many industrial applications; however, its origin remains poorly understood. Here by heating hydrogenated aluminium inside an environmental transmission electron microscope, we show that hydrogen exposure of just a few minutes can greatly degrade the high temperature integrity of metal–oxide interface. Moreover, there exists a critical temperature of ∼150 °C, above which the growth of cavities at the metal–oxide interface reverses to shrinkage, followed by the formation of a few giant cavities. Vacancy supersaturation, activation of a long-range diffusion pathway along the detached interface and the dissociation of hydrogen-vacancy complexes are critical factors affecting this behaviour. These results enrich the understanding of hydrogen-induced interfacial failure at elevated temperatures.

  10. Ab Initio Thermodynamic Modeling of Electrified Metal-Oxide Interfaces

    DEFF Research Database (Denmark)

    Zeng, Zhenhua; Hansen, Martin Hangaard; Greeley, Jeff

    2015-01-01

    Solid oxide fuel cells are attractive devices in a sustainable energy context because of their fuel flexibility and potentially highly efficient conversion of chemical to electrical energy. The performance of the device is to a large extent determined by the atomic structure of the electrode-elec...

  11. Interface strength and degradation of adhesively bonded porous aluminum oxides

    NARCIS (Netherlands)

    Abrahami, S.T.; de Kok, John M.M.; Gudla, Visweswara C.; Ambat, Rajan; Terryn, H.A.; Mol, J.M.C.

    2017-01-01

    For more than six decades, chromic acid anodizing has been the main step in the surface treatment of aluminum for adhesively bonded aircraft structures. Soon this process, known for producing a readily adherent oxide with an excellent corrosion resistance, will be banned by strict international

  12. Novel graphene-oxide-coated SPR interfaces for biosensing applications

    DEFF Research Database (Denmark)

    Volkov, V. S.; Stebunov, Yu V.; Yakubovsky, D. I.

    2017-01-01

    Carbon allotropes-based nanomaterials possess unique physical and chemical properties including high surface area, the possibility of pi-stacking interaction with a wide range of biological objects, rich availability of oxygen-containing functional groups in graphene-oxide (GO), and excellent...

  13. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  14. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, Heike, E-mail: angermann@helmholtz-berlin.de

    2014-09-01

    Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D{sub it}(E), and density D{sub it,min} of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly

  15. Microstructure and mechanical properties of metal/oxide and metal/silicide interfaces

    International Nuclear Information System (INIS)

    Shaw, L.; Miracle, D.; Abbaschian, R.

    1995-01-01

    Fracture energies of Al 2 O 3 /Nb interfaces and MoSi 2 /Nb interfaces with and without Al 2 O 3 coating were measured using sandwich-type chevron-notched specimens. The relations between the mechanical properties, microstructures, types of bonds at the interface and processing routes were explored. The fracture energy of the Al 2 O 3 /Nb interface was determined to be 9 J/m 2 and changed to 16 J/m 2 when Nb was pre-oxidized before the formation of the Al 2 O 3 /Nb interface. The fracture energy of the MoSi 2 /Nb interface could not be determined directly because of the formation of the interfacial compounds. However, the fracture energy at the MoSi 2 /Nb interfacial region was found to depend on the interfacial bond strength, roughness of interfaces and microstructure of interfacial compounds. The interfacial fracture energies of Al 2 O 3 with silicides, MoSi 2 , Nb 5 Si 3 , or (Nb, Mo)Si 2 were estimated to be about 16 J/m 2 , while the interfacial fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m 2 . The measured fracture energies of the various interfaces are discussed in terms of the interfacial microstructures and types of bonds at the interfaces

  16. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    International Nuclear Information System (INIS)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ interface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°

  17. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Ngah Demon, Siti Zulaikha [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Department of Physics, Centre of Defence Foundation Studies, National Defence University of Malaysia, 53 000 Kuala Lumpur (Malaysia); Miyauchi, Yoshihiro [Department of Applied Physics, School of Applied Sciences, National Defense Academy of Japan, 239-8686 Kanagawa (Japan); Mizutani, Goro, E-mail: mizutani@jaist.ac.jp [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Matsushima, Toshinori; Murata, Hideyuki [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan)

    2014-08-30

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ{sub interface} with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  18. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  19. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  20. Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

    2010-01-01

    Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

  1. Physical chemistry of the interface between oxide and aqueous solution

    International Nuclear Information System (INIS)

    Jolivet, J.P.

    1997-01-01

    The behavior and properties of small oxide particles in aqueous suspension are dominated by the physico-chemistry of their surface. It is electrostatically charged and strongly solvated. The origin of the surface charge is discussed through the MUSIC model [Hiemstra 1996], allowing to estimate the acid-base behavior of surface oxygen atoms. The stability of aqueous dispersions of particles is analysed following the DLVO model, with a special attention on the hydration layers allowing the peptization of flocs. Different adsorption mechanisms of metal cations are presented in terms of coordination chemistry (outer- and inner-sphere complexes) emphasizing the coordinating ability of the surface towards metal complexes in solution. The anion adsorption is also studied in relation with some interesting consequences on spinel iron oxide nano-particles. (author)

  2. Proximity Band Structure and Spin Textures on Both Sides of Topological-Insulator/Ferromagnetic-Metal Interface and Their Charge Transport Probes.

    Science.gov (United States)

    Marmolejo-Tejada, Juan Manuel; Dolui, Kapildeb; Lazić, Predrag; Chang, Po-Hao; Smidstrup, Søren; Stradi, Daniele; Stokbro, Kurt; Nikolić, Branislav K

    2017-09-13

    The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin textures around their interfaces. Here we combine density functional theory with Green's function techniques to obtain the spectral function at any plane passing through atoms of Bi 2 Se 3 and Co or Cu layers comprising the interface. Instead of naively assumed Dirac cone gapped by the proximity exchange field spectral function, we find that the Rashba ferromagnetic model describes the spectral function on the surface of Bi 2 Se 3 in contact with Co near the Fermi level E F 0 , where circular and snowflake-like constant energy contours coexist around which spin locks to momentum. The remnant of the Dirac cone is hybridized with evanescent wave functions from metallic layers and pushed, due to charge transfer from Co or Cu layers, a few tenths of an electron-volt below E F 0 for both Bi 2 Se 3 /Co and Bi 2 Se 3 /Cu interfaces while hosting distorted helical spin texture wounding around a single circle. These features explain recent observation of sensitivity of spin-to-charge conversion signal at TI/Cu interface to tuning of E F 0 . Crucially for spin-orbit torque in TI/FM heterostructures, few monolayers of Co adjacent to Bi 2 Se 3 host spectral functions very different from the bulk metal, as well as in-plane spin textures (despite Co magnetization being out-of-plane) due to proximity spin-orbit coupling in Co induced by Bi 2 Se 3 . We predict that out-of-plane tunneling anisotropic magnetoresistance in Cu/Bi 2 Se 3 /Co vertical heterostructure can serve as a sensitive probe of the type of spin texture residing at E F 0 .

  3. Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Saks, N.S.

    1996-01-01

    We have combined thermally stimulated-current (TSC) and capacitance endash voltage (C endash V) measurements to estimate oxide, interface, and effective border trap densities in 6 endash 23 nm thermal, N 2 O, and N 2 O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%endash 1%) in the best N 2 O and N 2 O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO 2 ) x-ray irradiation or ∼10 mC/cm 2 constant current Fowler endash Nordheim injection, effective border trap densities as high as ∼5x10 11 cm -2 are inferred from C endash V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2x10 12 cm -2 ) are inferred from combined TSC and C endash V measurements. These trapped electrons prevent conventional C endash V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N 2 O and N 2 O-nitrided oxides than for thermal oxides (∼46%±7%). (Abstract Truncated)

  4. Electric detection of the spin-Seebeck effect in magnetic insulator in the presence of interface barrier

    International Nuclear Information System (INIS)

    Uchida, K; Ota, T; Kajiwara, Y; Saitoh, E; Umezawa, H; Kawai, H

    2011-01-01

    The spin-Seebeck effect (SSE), the spin-voltage generation as a result of a temperature gradient, has recently been observed in ferrimagnetic insulator LaY 2 Fe 5 O 12 films by means of the inverse spin-Hall effect in Pt films. Here we investigate the SSE using LaY 2 Fe 5 O 12 /SiO 2 (Cu)/Pt systems, where the LaY 2 Fe 5 O 12 and Pt layers are separated by SiO 2 (Cu) thin-film barriers. The experimental results show that the SSE signal disappears in the LaY 2 Fe 5 O 12 /SiO 2 /Pt system, but the finite signal appears in the LaY 2 Fe 5 O 12 /Cu/Pt system, indicating that the direct contacts between the LaY 2 Fe 5 O 12 and normal metals is necessary for generating the SSE signal.

  5. Hotspots of anaerobic ammonia oxidation in land - freshwater interfaces

    DEFF Research Database (Denmark)

    Zhu, Guibing; Wang, Shanyun; Wang, Weidong

    2013-01-01

    sampled fromlake riparian zones in North China. Laboratory incubations in the presence of ammonium or nitrate—at concentrations equivalent to no more than 10% of those detected in situ—yielded some of the highest potential anammox activities reported for natural environments to date. Potential rates......For decades, the conversion of organic nitrogen to dinitrogen gas by heterotrophic bacteria, termed heterotrophic denitrification, was assumed to be the main pathway of nitrogen loss in natural ecosystems. Recently, however, autotrophic bacteria have been shown to oxidize ammonium in the absence...

  6. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  7. Atomic Layer Epitaxy of Superconducting Oxides and Heterostructures

    National Research Council Canada - National Science Library

    Chang, R

    1998-01-01

    ...) materials and insulating metal oxides. Improving the nature of such interfaces is a crucial barrier which must be surmounted before HTS materials can be successfully incorporated on a large scale into a myriad of advanced active...

  8. Photoelectrolysis at the oxide-electrolyte interface as interpreted through the 'transition' layer model

    Science.gov (United States)

    Kalia, R. K.; Weber, Michael F.; Schumacher, L.; Dignam, M. J.

    1980-12-01

    A transition layer model of the oxide-electrolyte interface, proposed earlier by one of us, is outlined and then examined in the light of experimental data relating primarily to photoelectrolysis of water at semiconducting oxide electrodes. The model provides useful insight into the behaviour of the system and allows a calculation of thc minimum bias potential needed for photoelectrolysis, thus illuminating the origin of the requirement for such an external bias. In order to electrolyse water without a bias, the model requires an n-type oxide to be sufficiently reduced so that it is thermodynamically capable of chemically reducing water to produce hydrogen at 1 atm pressure. Similarly, for bias-free operation, a p-type metal oxide must be thermodynamically unstable with respect to the release of oxygen at 1 atm pressure. In the face of these requirements it is apparent that oxide stability is bound to be in general a serious problem for nonstoichiometric single metal oxides.

  9. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  10. Determination of the bonding strength in solid oxide fuel cells' interfaces by Schwickerath crack initiation test

    DEFF Research Database (Denmark)

    Boccaccini, D. N.; Sevecek, O.; Frandsen, Henrik Lund

    2017-01-01

    An adaptation of the Schwickerath crack initiation test (ISO 9693) was used to determine the bonding strength between an anode support and three different cathodes with a solid oxide fuel cell interconnect. Interfacial elemental characterization of the interfaces was carried out by SEM/EDS analys...

  11. Interface engineering for oxide electronics: tuning electronic properties by atomically controlled growth

    NARCIS (Netherlands)

    Huijben, Mark

    2006-01-01

    The main aim of this thesis is to develop a controlled growth with atomic precision for the realization of artificial perovskite structures, to exploit the exceptional physical properties of complex oxide materials such as high-temperature superconductors and conducting interfaces between band

  12. The electrochemical transfer reactions and the structure of the iron|oxide layer|electrolyte interface

    International Nuclear Information System (INIS)

    Petrović, Željka; Metikoš-Huković, Mirjana; Babić, Ranko

    2012-01-01

    The thickness, barrier (protecting) and semiconducting properties of the potentiostatically formed oxide films on the pure iron electrode in an aqueous borate buffer solution were investigated by electrochemical quartz crystal nanobalance (EQCN), electrochemical impedance spectroscopy (EIS), and Mott–Schottky (MS) analysis. The thicknesses of the prepassive Fe(II)hydroxide layer (up to monolayer) nucleated on the bare iron surface and the passive Fe(II)/Fe(III) layer (up to 2 nm), deposited on the top of the first one, were determined using in situ gravimetry. Electronic properties of iron prepassive and passive films as well as ionic and electronic transfer reactions at the film|solution interface were discussed on the basis of a band structure model of the surface oxide film and the potential distribution at the interface. The anodic oxide film formation and cathodic decomposition are coupled processes and their reversible inter-conversion is mediated by the availability of free charge carriers on the electrode|solution interface. The structure of the reversible double layer at the iron oxide|solution interface was discussed based on the concept of the specific adsorption of the imidazolium cation on the negatively charged electrode surface at pH > pH pzc .

  13. Stability Study of Flexible 6,13-Bis(triisopropylsilylethynylpentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol/Yttrium Oxide Nanocomposite Gate Insulator

    Directory of Open Access Journals (Sweden)

    Jin-Hyuk Kwon

    2016-03-01

    Full Text Available We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynylpentacene (TIPS-pentacene thin-film transistors (TFTs that were fabricated on polyimide (PI substrates using cross-linked poly(4-vinylphenol (c-PVP and c-PVP/yttrium oxide (Y2O3 nanocomposite films as gate insulators. Compared with the electrical characteristics of TIPS-pentacene TFTs with c-PVP insulators, the TFTs with c-PVP/Y2O3 nanocomposite insulators exhibited enhancements in the drain current and the threshold voltage due to an increase in the dielectric capacitance. In electrical stability experiments, a gradual decrease in the drain current and a negative shift in the threshold voltage occurred during prolonged bias stress tests, but these characteristic variations were comparable for both types of TFT. On the other hand, the results of mechanical bending tests showed that the characteristic degradation of the TIPS-pentacene TFTs with c-PVP/Y2O3 nanocomposite insulators was more critical than that of the TFTs with c-PVP insulators. In this study, the detrimental effect of the nanocomposite insulator on the mechanical stability of flexible TIPS-pentacene TFTs was found to be caused by physical adhesion of TIPS-pentacene molecules onto the rough surfaces of the c-PVP/Y2O3 nanocomposite insulator. These results indicate that the dielectric and morphological properties of polymeric nanocomposite insulators are significant when considering practical applications of flexible electronics operated at low voltages.

  14. Metal/metal-oxide interfaces: A surface science approach to the study of adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Peden, C.H.F.; Kidd, K.B.; Shinn, N.D. (Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (USA))

    1991-05-01

    Metal-oxide/metal interfaces play an important role, for example, in the joining of an oxide ceramic to a metal for sealing applications. In order to probe the chemical and physical properties of such an interface, we have performed Auger electron spectroscopic (AES) and temperature programed desorption (TPD) experiments on a model system composed of very thin films of Cr, Fe, Ni, or Cu evaporated onto a very thin thermally grown oxide on a W single crystal. Monolayer films of Fe and Cr were found (by AES) to completely wet the oxide surface upon deposition, and were stable up to temperatures at which the films desorbed ({approx}1300 K). In contrast, monolayer Ni and Cu films formed three-dimensional islands exposing the oxidized W surface either upon annealing (Ni) or even upon room-temperature deposition (Cu). The relative interfacial interaction between the overlayer metal and the oxide, as assessed by TPD, increases in the series Cu{lt}Ni{lt}Fe{lt}Cr. This trend follows the heats of formation of the various oxides of these metals.

  15. Efficient charge-spin conversion and magnetization switching through the Rashba effect at topological-insulator/Ag interfaces

    Science.gov (United States)

    Shi, Shuyuan; Wang, Aizhu; Wang, Yi; Ramaswamy, Rajagopalan; Shen, Lei; Moon, Jisoo; Zhu, Dapeng; Yu, Jiawei; Oh, Seongshik; Feng, Yuanping; Yang, Hyunsoo

    2018-01-01

    We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) B i2S e3 and Ag bilayer by the spin-torque ferromagnetic resonance technique. The spin-orbit-torque ratio in the B i2S e3/Ag /CoFeB heterostructure shows a significant enhancement as the Ag thickness increases to ˜2 nm and reaches a value of 0.5 for 5 nm Ag, which is ˜3 times higher than that of B i2S e3/CoFeB at room temperature. The observation reveals the interfacial effect of B i2S e3/Ag exceeds that of the topological surface states (TSSs) in the B i2S e3 layer and plays a dominant role in the charge-to-spin conversion in the B i2S e3/Ag /CoFeB system. Based on first-principles calculations, we attribute our observation to the large Rashba splitting bands which wrap the TSS band and have the same net spin polarization direction as the TSS of B i2S e3 . Subsequently, we demonstrate Rashba-induced magnetization switching in B i2S e3/Ag /Py with a low current density of 5.8 ×105A /c m2 .

  16. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Xu, Can; Feldman, Leonard C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Bloch, Joseph [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); NRCN, Beer-Sheva 84190 (Israel); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-11-10

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup ¯}) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

  17. Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

    International Nuclear Information System (INIS)

    Zupac, D.; Galloway, K.F.; Khosropour, P.; Anderson, S.R.; Schrimpf, R.D.

    1993-01-01

    An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets which have different functional relationships between the radiation-induced-oxide-trapped charge and interface-trapped charge. Separation of effects of oxide-trapped charge and interface-trapped charge is possible only if these two trapped charge components are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated and quantified

  18. The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

    Directory of Open Access Journals (Sweden)

    Đorić-Veljković Snežana M.

    2013-01-01

    Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

  19. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  20. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    OpenAIRE

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

    2016-01-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

  1. Crystalline oxides on semiconductors: A structural transition of the interface phase

    Science.gov (United States)

    Walker, F. J.; Buongiorno-Nardelli, Marco; Billman, C. A.; McKee, R. A.

    2004-03-01

    The growth of crystalline oxides on silicon is facilitated by the preparation of a surface phase of alkaline earth silicide. We describe how the surface phase serves as a precursor of the final interface phase using reflection high energy electron diffraction (RHEED) and density functional theory (DFT). RHEED intensity oscillations of the growth of BaSrO show layer-by-layer build up of the oxide on the interface. The 2x1 symmetry of the surface precursor persists up to 3 ML BaSrO coverage at which point a 1x1 pattern characteristic of the rock-salt structure of BaSrO is observed. Prior to 3 ML growth of alkaline earth oxide, DFT calculations and RHEED show that the surface precursor persists as the interface phase and induces large displacements in the growing oxide layer away from the rock-salt structure and having a 2x1 symmetry. These distortions of the rock-salt structure are energetically unfavorable and become more unfavorable as the oxide thickness increases. At 3 ML, the stability of the rock-salt structure drives a structural transformation of the film and the interface phase to a structure that is distinct from the surface precursor. Research sponsored jointly by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy at Oak Ridge National Laboratory under contract DE-AC05-00OR22725 with UT-Battelle, LLC and at the University of Tennessee under contract DE-FG02-01ER45937. Calculations have been performed on CCS supercomputers at Oak Ridge National Laboratory.

  2. Metal-Insulator Transition in Copper Oxides Induced by Apex Displacements

    Directory of Open Access Journals (Sweden)

    Swagata Acharya

    2018-05-01

    Full Text Available High temperature superconductivity has been found in many kinds of compounds built from planes of Cu and O, separated by spacer layers. Understanding why critical temperatures are so high has been the subject of numerous investigations and extensive controversy. To realize high temperature superconductivity, parent compounds are either hole doped, such as La_{2}CuO_{4} (LCO with Sr (LSCO, or electron doped, such as Nd_{2}CuO_{4} (NCO with Ce (NCCO. In the electron-doped cuprates, the antiferromagnetic phase is much more robust than the superconducting phase. However, it was recently found that the reduction of residual out-of-plane apical oxygen dramatically affects the phase diagram, driving those compounds to a superconducting phase. Here we use a recently developed first-principles method to explore how displacement of the apical oxygen (AO in LCO affects the optical gap, spin and charge susceptibilities, and superconducting order parameter. By combining quasiparticle self-consistent GW (QS GW and dynamical mean-field theory (DMFT, we show that LCO is a Mott insulator, but small displacements of the apical oxygen drive the compound to a metallic state through a localization-delocalization transition, with a concomitant maximum in d-wave order parameter at the transition. We address the question of whether NCO can be seen as the limit of LCO with large apical displacements, and we elucidate the deep physical reasons why the behavior of NCO is so different from the hole-doped materials. We shed new light on the recent correlation observed between T_{c} and the charge transfer gap, while also providing a guide towards the design of optimized high-T_{c} superconductors. Further, our results suggest that strong correlation, enough to induce a Mott gap, may not be a prerequisite for high-T_{c} superconductivity.

  3. Interfacial Coatings for Inorganic Composite Insulation Systems

    International Nuclear Information System (INIS)

    Hooker, M. W.; Fabian, P. E.; Stewart, M. W.; Grandlienard, S. D.; Kano, K. S.

    2006-01-01

    Inorganic (ceramic) insulation materials are known to have good radiation resistance and desirable electrical and mechanical properties at cryogenic and elevated temperatures. In addition, ceramic materials can withstand the high-temperature reaction cycle used with Nb3Sn superconductor materials, allowing the insulation to be co-processed with the superconductor in a wind-and-react fabrication process. A critical aspect in the manufacture of ceramic-based insulation systems is the deposition of suitable fiber-coating materials that prevent chemical reaction of the fiber and matrix materials, and thus provide a compliant interface between the fiber and matrix, which minimizes the impact of brittle failure of the ceramic matrix. Ceramic insulation produced with CTD-FI-202 fiber interfaces have been found to exhibit very high shear and compressive strengths. However, this material is costly to produce. Thus, the goal of the present work is to evaluate alternative, lower-cost materials and processes. A variety of oxide and polyimide coatings were evaluated, and one commercially available polyimide coating has been shown to provide some improvement as compared to uncoated and de-sized S2 glass

  4. High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

    Science.gov (United States)

    Sun, Dawei; Chen, Cihai; Zhang, Jun; Wu, Xiaomin; Chen, Huipeng; Guo, Tailiang

    2018-01-01

    Fabrication of metal oxide thin film transistor (MOTFT) arrays using the inkjet printing process has caused tremendous interest for low-cost and large-area flexible electronic devices. However, the inkjet-printed MOTFT arrays usually exhibited a non-uniform geometry due to the coffee ring effect, which restricted their commercial application. Therefore, in this work, a strategy is reported to control the geometry and enhance device performance of inkjet-printed MOTFT arrays by the addition of an insulating polymer to the precursor solution prior to film deposition. Moreover, the impact of the polymer molecular weight (MW) on the geometry, chemical constitution, crystallization, and MOTFT properties of inkjet-printed metal oxide depositions was investigated. The results demonstrated that with an increase of MW of polystyrene (PS) from 2000 to 200 000, the coffee ring was gradually faded and the coffee ring effect was completely eliminated when MW reached 200 000, which is associated with the enhanced viscosity with the insulating polymer, providing a high resistance to the outward capillary flow, which facilitated the depinning of the contact line, leading to the elimination of the coffee ring. More importantly, the carrier mobility increased significantly from 4.2 cm2 V-1 s-1 up to 13.7 cm2 V-1 s-1 as PS MW increased from 2000 to 200 000, which was about 3 times that of the pristine In2O3 TFTs. Grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy results indicated that PS doping of In2O3 films not only frustrated crystallization but also altered chemical constitution by enhancing the formation of the M-O structure, both of which facilitated the carrier transport. These results demonstrated that the simple polymer additive process provides a promising method that can efficiently control the geometry of MO arrays during inkjet printing and maximize the device performance of MOTFT arrays, which showed great potential for the application in next

  5. Scaling behaviors of magnetoconductivity in amorphous indium oxide near the metal-insulator transition

    CERN Document Server

    Lee, Y J; Kim, Y S

    2000-01-01

    Magnetoconductivity is measured in an amorphous indium-oxide sample which is in the microscopic region. Two different scaling behaviors are observed for the magnetoconductivity The scaling behavior is determined by either the localization or the electron correlation effects, whichever becomes stronger more rapidly at a given temperature and magnetic field. Qualitative explanations are given for the observed scaling behaviors. A curve of a function of H/T sup 2 sup / sup 3 exists on which all our magnetoconductivity data lie.

  6. Finite element modelling of the oxidation kinetics of Zircaloy-4 with a controlled metal-oxide interface and the influence of growth stress

    International Nuclear Information System (INIS)

    Zumpicchiat, Guillaume; Pascal, Serge; Tupin, Marc; Berdin-Méric, Clotilde

    2015-01-01

    Highlights: We developed two finite element models of zirconium-based alloy oxidation using the CEA Cast3M code to simulate the oxidation kinetics of Zircaloy-4: the diffuse interface model and the sharp interface model. We also studied the effect of stresses on the oxidation kinetics. The main results are: • Both models lead to parabolic oxidation kinetics in agreement with the Wagner’s theory. • The modellings enable to calculate the stress distribution in the oxide as well as in the metal. • A strong effect of the hydrostatic stress on the oxidation kinetics has been evidenced. • The stress gradient effect changes the parabolic kinetics into a sub-parabolic law closer to the experimental kinetics because of the stress gradient itself, but also because of the growth stress increase with the oxide thickness. - Abstract: Experimentally, zirconium-based alloys oxidation kinetics is sub-parabolic, by contrast with the Wagner theory which predicts a parabolic kinetics. Two finite element models have been developed to simulate this phenomenon: the diffuse interface model and the sharp interface model. Both simulate parabolic oxidation kinetics. The growth stress effects on oxygen diffusion are studied to try to explain the gap between theory and experience. Taking into account the influence of the hydrostatic stress and its gradient into the oxygen flux expression, sub-parabolic oxidation kinetics have been simulated. The sub-parabolic behaviour of the oxidation kinetics can be explained by a non-uniform compressive stress level into the oxide layer.

  7. Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

    International Nuclear Information System (INIS)

    Trinh, Thanh Thuy; Nguyen, Van Duy; Ryu, Kyungyul; Jang, Kyungsoo; Lee, Wonbeak; Baek, Seungshin; Raja, Jayapal; Yi, Junsin

    2011-01-01

    An amorphous InGaZnO film fabricated by radio frequency magnetron sputtering in only an Ar-reactive gas shows high conductivity, and a thin-film transistors (TFTs)-based IGZO active layer expresses a poor on/off current ratio with a high off current and high subthreshold swing (SS). This paper presents the post-annealing effects on IGZO thin films to compensate the oxygen deficiencies in films as well as on TFT devices to reduce the densities of the interface trap between the active layer and insulator. The ratio of oxygen vacancies over total of oxygen (O 2 /O tot ) in IGZO estimated by the XPS measurement shows that they significantly diminish from 24.75 to 17.68% when increasing the temperature treatment to 350 °C, which is related to the enhancement in resistivity of IGZO. The TFT characteristics of IGZO treated in air at 350 °C show a high I ON /I OFF ratio of ∼1.1 × 10 7 , a high field-effect mobility of 7.48 cm 2 V −1 s −1 , and a low SS of 0.41 V dec −1 . The objective of this paper is to achieve a successful reduction in the interface trap density, ΔD it , which has been reduced about 3.1 × 10 12 cm −2 eV −1 and 2.0 × 10 12 cm −2 eV −1 for the 350 and 200 °C treatment samples compared with the as-deposited one. The resistivity of the IGZO films can be adjusted to the appropriate value that can be used for TFT applications by controlling the treatment temperature

  8. Interface Controlled Oxidation States in Layered Cobalt Oxide Nanoislands on Gold

    DEFF Research Database (Denmark)

    Walton, Alexander; Fester, Jakob; Bajdich, Michal

    2015-01-01

    Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER; half of the catalytic “water splitting” reaction), particularly when promoted with gold. However, the surface chemistry of cobalt oxides and in particular the nature of the synergistic effect...

  9. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

    Science.gov (United States)

    Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

    2006-12-01

    The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

  10. In situ observation of Ag-Cu-Ti liquid alloy/solid oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Durov, O.V. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)], E-mail: avdu@ukr.net; Krasovskyy, V.P. [Frantsevich Institute for Problems of Materials Science of NASU, 3 Krzhyzhanovsky Street, Kiev 142, 03680 (Ukraine)

    2008-11-15

    In situ investigation methods are a very interesting means for understanding high-temperature interface processes. A method of direct observation of the interactions between transparent materials (Al{sub 2}O{sub 3}, SiO{sub 2}, CaF{sub 2}) and metal melts was elaborated. For the Ag-36.65 at.%Cu-8.15 at.%Ti/sapphire system, the formation of a dark compound at the interface was observed to occur at high temperature. This result does not confirm the conclusion of a neutron spectroscopy study which indicated that titanium oxides form at the interface only during solidification of the alloy. Interactions of the same alloy with SiO{sub 2} and CaF{sub 2} were also considered.

  11. Effects of the Molybdenum Oxide/Metal Anode Interfaces on Inverted Polymer Solar Cells

    International Nuclear Information System (INIS)

    Wu Jiang; Guo Xiao-Yang; Xie Zhi-Yuan

    2012-01-01

    Inverted polymer solar cells with molybdenum oxide (MoO 3 ) as an anode buffer layer and different metals (Al or Ag) as anodes are studied. It is found that the inverted cell with a top Ag anode demonstrates enhanced charge collection and higher power conversion efficiency (PCE) compared to the cell with a top Al anode. An 18% increment of PCE is obtained by replacing Al with Ag as the top anode. Further studies show that an interfacial dipole pointing from MoO 3 to Al is formed at MoO 3 /Al interfaces due to electron transfer from Al to MoO 3 while this phenomenon cannot be observed at MoO 3 /Ag interfaces. It is speculated that the electric field at the MoO 3 /Al interface would hinder hole extraction, and hence reduce the short-circuit current

  12. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

    OpenAIRE

    Ivan Litzov; Christoph J. Brabec

    2013-01-01

    Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work fun...

  13. Laser assisted green synthesis of free standing reduced graphene oxides at the water–air interface

    International Nuclear Information System (INIS)

    Compagnini, G; Russo, P; Tomarchio, F; Puglisi, O; D’Urso, L; Scalese, S

    2012-01-01

    A single step, scalable and green strategy has been developed to obtain reduced graphene oxide layers in water dispersion through nanosecond laser pulse irradiation of carbon targets. The layers spontaneously migrate at the water–air interface, forming sheets of several tens of micrometers and show intense ultraviolet photoluminescence. This unique condition offers an intriguing environment where opposing dielectric media meet and can be used in all those processes where molecular interactions such as hydrogen bonding and electrostatic interactions are greatly enhanced. (paper)

  14. Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics.

    Science.gov (United States)

    Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

    2018-07-06

    All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV-vis spectroscopy and AFM measurements show that this functionality stems from the films' ability to structurally tune their HOMO-LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO 2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures' plausibility for on-chip molecular electronics operative at room temperature.

  15. Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics

    Science.gov (United States)

    Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M.; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

    2018-07-01

    All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV–vis spectroscopy and AFM measurements show that this functionality stems from the films’ ability to structurally tune their HOMO–LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures’ plausibility for on-chip molecular electronics operative at room temperature.

  16. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  17. Promotion of Water-mediated Carbon Removal by Nanostructured Barium Oxide/nickel Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    L Yang; Y Choi; W Qin; H Chen; K Blinn; M Liu; P Liu; J Bai; T Tyson; M Liu

    2011-12-31

    The existing Ni-yttria-stabilized zirconia anodes in solid oxide fuel cells (SOFCs) perform poorly in carbon-containing fuels because of coking and deactivation at desired operating temperatures. Here we report a new anode with nanostructured barium oxide/nickel (BaO/Ni) interfaces for low-cost SOFCs, demonstrating high power density and stability in C{sub 3}H{sub 8}, CO and gasified carbon fuels at 750 C. Synchrotron-based X-ray analyses and microscopy reveal that nanosized BaO islands grow on the Ni surface, creating numerous nanostructured BaO/Ni interfaces that readily adsorb water and facilitate water-mediated carbon removal reactions. Density functional theory calculations predict that the dissociated OH from H2O on BaO reacts with C on Ni near the BaO/Ni interface to produce CO and H species, which are then electrochemically oxidized at the triple-phase boundaries of the anode. This anode offers potential for ushering in a new generation of SOFCs for efficient, low-emission conversion of readily available fuels to electricity.

  18. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  19. Hydrogen interactions with silicon-on-insulator materials

    OpenAIRE

    Rivera de Mena, A.J.

    2003-01-01

    The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously increase the number of transistors per chip until the physical limit of integration is now almost reached. Silicon-on-insulator (SOI) materials were early on seen as a step in the logical evolutio...

  20. The InP - SiO2 interface: Electron tunneling into oxide traps

    International Nuclear Information System (INIS)

    Prasad, S.J.; Owen, S.J.T.

    1985-01-01

    Indium Phosphide is an attractive material for high-speed devices. Though many successful devices have been built and demonstrated, InP MISFET's still suffer from drain current drift. From the data current drift measurements, the shift in the threshold voltage ΔV was computed for different times. It was found that a linear relationship exists between √ΔV and log(t). When a positive bias-stress was applied to the gate of an MIS capacitor for a time t, the C-V cure shifted by an amount ΔV and again, a linear relationship was observed between √ΔV and log(t). This was verified on four different gate insulators: pyrolytic SiO 2 at 320 0 C and 360 0 C, plasma oxide at 300 0 C and photo CVD oxide at 225 0 C. These results can only be explained by a model in which electrons tunnel from the substrate into oxide traps

  1. Iron oxidation kinetics and phosphorus immobilization at the groundwater-surface water interface

    Science.gov (United States)

    van der Grift, Bas; Rozemeijer, Joachim; Griffioen, Jasper; van der Velde, Ype

    2014-05-01

    Eutrophication of freshwater environments following diffuse nutrient loads is a widely recognized water quality problem in catchments. Fluxes of non-point P sources to surface waters originate from surface runoff and flow from soil water and groundwater into surface water. The availability of P in surface waters is controlled strongly by biogeochemical nutrient cycling processes at the soil-water interface. The mechanisms and rates of the iron oxidation process with associated binding of phosphate during exfiltration of anaerobic Fe(II) bearing groundwater are among the key unknowns in P retention processes in surface waters in delta areas where the shallow groundwater is typically pH-neutral to slightly acid, anoxic, iron-rich. We developed an experimental field set-up to study the dynamics in Fe(II) oxidation and mechanisms of P immobilization at the groundwater-surface water interface in an agricultural experimental catchment of a small lowland river. We physically separated tube drain effluent from groundwater discharge before it entered a ditch in an agricultural field. The exfiltrating groundwater was captured in in-stream reservoirs constructed in the ditch. Through continuous discharge measurements and weekly water quality sampling of groundwater, tube drain water, exfiltrated groundwater, and ditch water, we quantified Fe(II) oxidation kinetics and P immobilization processes across the seasons. This study showed that seasonal changes in climatic conditions affect the Fe(II) oxidation process. In winter time the dissolved iron concentrations in the in-stream reservoirs reached the levels of the anaerobic groundwater. In summer time, the dissolved iron concentrations of the water in the reservoirs are low, indicating that dissolved Fe(II) is completely oxidized prior to inflow into the reservoirs. Higher discharges, lower temperatures and lower pH of the exfiltrated groundwater in winter compared to summer shifts the location of the redox transition zone

  2. Synthesis and morphology of hydroxyapatite/polyethylene oxide nanocomposites with block copolymer compatibilized interfaces

    Science.gov (United States)

    Lee, Ji Hoon; Shofner, Meisha

    2012-02-01

    In order to exploit the promise of polymer nanocomposites, special consideration should be given to component interfaces during synthesis and processing. Previous results from this group have shown that nanoparticles clustered into larger structures consistent with their native shape when the polymer matrix crystallinity was high. Therefore in this research, the nanoparticles are disguised from a highly-crystalline polymer matrix by cloaking them with a matrix-compatible block copolymer. Specifically, spherical and needle-shaped hydroxyapatite nanoparticles were synthesized using a block copolymer templating method. The block copolymer used, polyethylene oxide-b-polymethacrylic acid, remained on the nanoparticle surface following synthesis with the polyethylene oxide block exposed. These nanoparticles were subsequently added to a polyethylene oxide matrix using solution processing. Characterization of the nanocomposites indicated that the copolymer coating prevented the nanoparticles from assembling into ordered clusters and that the matrix crystallinity was decreased at a nanoparticle spacing of approximately 100 nm.

  3. Raman spectroscopy of sputtered metal-graphene and metal-oxide-graphene interfaces

    Science.gov (United States)

    Chen, Ching-Tzu; Gajek, Marcin; Freitag, Marcus; Kuroda, Marcelo; Perebeinos, Vasili; Raoux, Simone

    2012-02-01

    In this talk, we report our recent development in sputtering deposition of magnetic and non-magnetic metal and metal-oxide thin films on graphene for applications in spintronics and nanoeleoctronics. TEM and SEM images demonstrate homogeneous coverage, uniform thickness, and good crystallinity of the sputtered films. Raman spectroscopy shows that the structure of the underlying graphene is well preserved, and the spectral weight of the defect D mode is comparable to that of the e-beam evaporated samples. Most significantly, we report the first observation of graphene-enhanced surface excitations of crystalline materials. Specifically, we discover two pronounced dispersive Raman modes at the interface of graphene and the nickel-oxide and cobalt-oxide films which we attribute to the strong light absorption and high-order resonant scattering process in the graphene layer. We will present the frequency-dependent, polarization-dependent Raman data of these two modes and discuss their microscopic origin.

  4. Preliminary results on the chemical characterisation of the cathode nickel--emissive layer interface in oxide cathodes

    International Nuclear Information System (INIS)

    Jenkins, S.N.; Barber, D.K.; Whiting, M.J.; Baker, M.A.

    2003-01-01

    In cathode ray tube (CRT) thermionic oxide cathodes, the nickel-oxide interface properties are key to understanding the mechanisms of operation. At the elevated operational temperatures, free barium is formed at the interface by the reaction of reducing activators, from the nickel alloy, with barium oxide. The free barium diffuses to the outer surface of the oxide providing a low work function electron-emitting surface. However, during cathode life an interface layer grows between the nickel alloy and oxide, comprised of reaction products. The interfacial layer sets limits on the cathode performance and useful operational lifetime by inhibiting the barium reducing reaction. This paper discusses sample preparation procedures for exposure of the interface and the use of several surface and bulk analytical techniques to study interface layer formation. SEM, AES and SIMS data are presented, which provide preliminary insight into the mechanisms operating during the cathode's lifetime. There is evidence that the activator elements in the nickel alloy base, Al and Mg, are able to diffuse to the surface of the oxide during activation and ageing and that these elements are enriched at the interface after accelerated life

  5. Atomic Scale Structure-Chemistry Relationships at Oxide Catalyst Surfaces and Interfaces

    Science.gov (United States)

    McBriarty, Martin E.

    Oxide catalysts are integral to chemical production, fuel refining, and the removal of environmental pollutants. However, the atomic-scale phenomena which lead to the useful reactive properties of catalyst materials are not sufficiently understood. In this work, the tools of surface and interface science and electronic structure theory are applied to investigate the structure and chemical properties of catalytically active particles and ultrathin films supported on oxide single crystals. These studies focus on structure-property relationships in vanadium oxide, tungsten oxide, and mixed V-W oxides on the surfaces of alpha-Al2O3 and alpha-Fe2O 3 (0001)-oriented single crystal substrates, two materials with nearly identical crystal structures but drastically different chemical properties. In situ synchrotron X-ray standing wave (XSW) measurements are sensitive to changes in the atomic-scale geometry of single crystal model catalyst surfaces through chemical reaction cycles, while X-ray photoelectron spectroscopy (XPS) reveals corresponding chemical changes. Experimental results agree with theoretical calculations of surface structures, allowing for detailed electronic structure investigations and predictions of surface chemical phenomena. The surface configurations and oxidation states of V and W are found to depend on the coverage of each, and reversible structural shifts accompany chemical state changes through reduction-oxidation cycles. Substrate-dependent effects suggest how the choice of oxide support material may affect catalytic behavior. Additionally, the structure and chemistry of W deposited on alpha-Fe 2O3 nanopowders is studied using X-ray absorption fine structure (XAFS) measurements in an attempt to bridge single crystal surface studies with real catalysts. These investigations of catalytically active material surfaces can inform the rational design of new catalysts for more efficient and sustainable chemistry.

  6. A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

    International Nuclear Information System (INIS)

    Yuan, Yang; Yong, Gao; Peng-Liang, Gong

    2008-01-01

    A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Analysis of the stability of native oxide films at liquid lead/metal interfaces

    International Nuclear Information System (INIS)

    Lesueur, C.; Chatain, D.; Gas, P.; Bergman, C.; Baque, F.

    2002-01-01

    The interface between liquid lead and different metallic solids (pure metals: Al, Fe and Ni, and T91 steel) was investigated below 400 deg C under ultrahigh vacuum (UHV) by wetting experiments. The aim was to check the physical stability of native oxide films grown at the surface of the substrates, along a contact with liquid lead. Two types of metallic substrates were used: i) conventional bulk polycrystals, and ii) nanocrystalline films obtained by e-beam evaporation under UHV. The actual contact between liquid lead and the solid substrates was achieved by preparing lead drops in-situ. Wetting experiments were performed using sessile drop and/or liquid bridge methods. Fresh solid surfaces and former liquid/solid interfaces can be explored by squeezing and stretching a liquid lead bridge formed between two parallel and horizontal substrates. It is shown that the contact with liquid lead produces the detachment of the native oxide films grown on the metallic solids. It is concluded that if oxide coatings are needed to protect a metallic solid from attack by liquid lead, they should be self-renewable. (authors)

  8. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces.

    Science.gov (United States)

    Litzov, Ivan; Brabec, Christoph J

    2013-12-10

    Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeO x ) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n -type- and p -type-like MeO x interface materials consisting of binary compounds A x B y . Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.

  9. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ Solar Cells Using Different Metal Oxide Interfaces

    Directory of Open Access Journals (Sweden)

    Ivan Litzov

    2013-12-01

    Full Text Available Solution-processed inverted bulk heterojunction (BHJ solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL and as hole transport/extraction layers (HTL/HEL in inverted BHJ solar cells will be reviewed and discussed.

  10. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

    Directory of Open Access Journals (Sweden)

    Fu-Chien Chiu

    2013-01-01

    Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

  11. The effect of interfaces on solid-state reactions between oxides

    International Nuclear Information System (INIS)

    Johnson, M.T.; Carter, C.B.

    1998-01-01

    A thin-film geometry has been used to study fundamental solid-state reaction processes occurring at interfaces in two spinel-forming oxide systems. In the first system, NiO/Al 2 O 3 , epitactic NiO films were deposited on various orientations of single-crystal α-Al 2 O 3 . In this case, the reaction kinetics were studied and correlated with the interfacial structure (or substrate orientation). In the second, In 2 O 3 /MgO, solid-state reactions were studied under the influence of an electric field. The electric field provides a driving force for mass transport that affects both the reaction process and the morphological stability of an interface

  12. Growth of aluminum oxide on silicon carbide with an atomically sharp interface

    DEFF Research Database (Denmark)

    Silva, Ana Gomes; Pedersen, Kjeld; Li, Zheshen

    2017-01-01

    this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO2 into a uniform layer of Al2O3 with an atomically sharp interface between the Al2O3 and the Si surface. In the present work, the same procedures are applied to form Al2O3 on a SiC film grown on top of Si (111). The results...... indicate that a similar process, resulting in a uniform layer of 1-2 nm of Al2O3 with an atomically sharp Al2O3/SiC interface, also works in this case.......The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation...

  13. Development of Efficient and Stable Inverted Bulk Heterojunction (BHJ) Solar Cells Using Different Metal Oxide Interfaces

    Science.gov (United States)

    Litzov, Ivan; Brabec, Christoph J.

    2013-01-01

    Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed. PMID:28788423

  14. Nanoscale control of oxide interface conduction in graphene-complex-oxide heterostructures

    Science.gov (United States)

    Huang, Mengchen; Ryu, Sangwoo; Ghahari, Fereshte; Jnawali, Giriraj; Ravichandran, Jayakanth; Irvin, Patrick; Kim, Philip; Eom, Chang-Beom; Levy, Jeremy

    2014-03-01

    Graphene is a promising material for high-speed optoelectronic devices such as THz modulators and detectors. Recently, broadband THz emission and detection can be achieved with nanostructures at the LaAlO3/SrTiO3 interface [2]. We have mechanically exfoliated single layer and multilayer graphene on top of 3.4 unit cell LaAlO3/SrTiO3 and successfully sketched nanowires in the 2DEG underneath graphene using conductive AFM lithgraphy [3]. Raman and AFM investigations confirm that the graphene quality and surface morphology remain unaltered by the writing process. These first experimental demonstrations of integrating graphene and LaAlO3/SrTiO3 are promising for future DC-THz photonic applications. We gratefully acknowledge support for this work from ONR (N00014-13-1-0806), NSF(DMR-1124131, DMR-1104191), and AFOSR (FA9550-12-1-0342).

  15. Effective improvement of interface modified strontium titanate based solid oxide fuel cell anodes by infiltration with nano-sized palladium and gadolinium-doped cerium oxide

    DEFF Research Database (Denmark)

    Abdul Jabbar, Mohammed Hussain; Høgh, Jens Valdemar Thorvald; Zhang, Wei

    2013-01-01

    The development of low temperature solid oxide fuel cell (SOFC) anodes by infiltration of Pd/Gd-doped cerium oxide (CGO) electrocatalysts in Nb-doped SrTiO3 (STN) backbones has been investigated. Modification of the electrode/electrolyte interface by thin layer of spin-coated CGO (400-500 nm) con...

  16. Interface bonding in silicon oxide nanocontacts: interaction potentials and force measurements

    Science.gov (United States)

    Wierez-Kien, M.; Craciun, A. D.; Pinon, A. V.; Le Roux, S.; Gallani, J. L.; Rastei, M. V.

    2018-04-01

    The interface bonding between two silicon-oxide nanoscale surfaces has been studied as a function of atomic nature and size of contacting asperities. The binding forces obtained using various interaction potentials are compared with experimental force curves measured in vacuum with an atomic force microscope. In the limit of small nanocontacts (typically contact area which is altered by stretching speeds. The mean unbinding force is found to decrease as the contact spends time in the attractive regime. This contact weakening is featured by a negative aging coefficient which broadens and shifts the thermal-induced force distribution at low stretching speeds.

  17. Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

    International Nuclear Information System (INIS)

    Peng Yingquan; Lu Feiping

    2006-01-01

    The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III)

  18. X-ray studies of interface Fe-oxide in annealed MgO based magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    Telesca, D., E-mail: donaldtelesca@gmail.com [Department of Physics, University of Connecticut, 2152 Hillside Road, Storrs, CT 06269 (United States); Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Sinkovic, B. [Space Vehicles Directorate, Air Force Research Lab (AFRL), Kirtland AFB, NM 87117 (United States); Yang, See-Hun; Parkin, S.S.P. [IBM Amaden Research Center, 650 Harry Road, San Jose, CA 95120 (United States)

    2012-08-15

    Highlights: Black-Right-Pointing-Pointer This work concludes the presence of oxide in MgO/transition-metal bi-layers. Black-Right-Pointing-Pointer Thermal annealing causes a possible structural transformation of the oxide. Black-Right-Pointing-Pointer This is first evidence for a possible structural change of the oxide. Black-Right-Pointing-Pointer First use of the O K-edge XAS signature of TM oxides to confirm presence of oxide. Black-Right-Pointing-Pointer We see a diffusion of oxygen and a decrease in interface roughness. -- Abstract: X-ray absorption spectroscopy and X-ray scattering have been used to determine the oxidation reactions at the buried MgO/Fe interface as a result of the deposition of MgO. We confirm that Fe-oxide is present at the MgO/Fe and MgO/CoFe interfaces and amounts to less than 1 mL in thickness. The Fe-oxide is a mixture of different iron oxide phases within the ultra-thin layer which can be reduced following annealing. We observe the transformation of the interfacial oxide from a more Fe{sub 2}O{sub 3}-like phase to a more FeO-like phase following annealing, and that this process is most noticeable between the 200 and 350 Degree-Sign C annealing steps. In addition, the formation of a more bulk like MgO electronic structure following annealing was observed.

  19. Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2017-04-01

    The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

  20. Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

    International Nuclear Information System (INIS)

    Yan Hongli; Jia Renxu; Tang Xiaoyan; Song Qingwen; Zhang Yuming

    2014-01-01

    The effect of the different re-oxidation annealing (ROA) processes on the SiO 2 /SiC interface characteristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance—voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 °C for 30 min, while a large number of effective dielectric charges are generated. The components at the SiO 2 /SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. (semiconductor technology)

  1. Oxide/water interfaces: how the surface chemistry modifies interfacial water properties

    International Nuclear Information System (INIS)

    Gaigeot, Marie-Pierre; Sprik, Michiel; Sulpizi, Marialore

    2012-01-01

    The organization of water at the interface with silica and alumina oxides is analysed using density functional theory-based molecular dynamics simulation (DFT-MD). The interfacial hydrogen bonding is investigated in detail and related to the chemistry of the oxide surfaces by computing the surface charge density and acidity. We find that water molecules hydrogen-bonded to the surface have different orientations depending on the strength of the hydrogen bonds and use this observation to explain the features in the surface vibrational spectra measured by sum frequency generation spectroscopy. In particular, ‘ice-like’ and ‘liquid-like’ features in these spectra are interpreted as the result of hydrogen bonds of different strengths between surface silanols/aluminols and water. (paper)

  2. A study into the impact of interface roughness development on mechanical degradation of oxides formed on zirconium alloys

    International Nuclear Information System (INIS)

    Platt, P.; Wedge, S.; Frankel, P.; Gass, M.; Howells, R.; Preuss, M.

    2015-01-01

    As a cladding material used to encapsulate nuclear fuel pellets, zirconium alloys are the primary barrier separating the fuel and a pressurised steam or lithiated water environment. Degradation mechanisms such as oxidation can be the limiting factor in the life-time of the fuel assembly. Key to controlling oxidation, and therefore allowing increased burn-up of fuel, is the development of a mechanistic understanding of the corrosion process. In an autoclave, the oxidation kinetics for zirconium alloys are typically cyclical, with periods of accelerated kinetics being observed in steps of ∼2 μm oxide growth. These periods of accelerated oxidation are immediately preceded by the development of a layer of lateral cracks near the metal-oxide interface, which may be associated with the development of interface roughness. The present work uses scanning electron microscopy to carry out a statistical analysis of changes in the metal-oxide interface roughness between three different alloys at different stages of autoclave oxidation. The first two alloys are Zircaloy-4 and ZIRLO ™ for which analysis is carried out at stages before, during and after first transition. The third alloy is an experimental low tin alloy, which under the same oxidation conditions and during the same time period does not appear to go through transition. Assessment of the metal-oxide interface roughness is primarily carried out based on the root mean square of the interface slope known as the R dq parameter. Results show clear trends with relation to transition points in the corrosion kinetics. Discussion is given to how this relates to the existing mechanistic understanding of the corrosion process, and the components required for possible future modelling approaches

  3. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

  4. Study on component interface evolution of a solid oxide fuel cell stack after long term operation

    Science.gov (United States)

    Yang, Jiajun; Huang, Wei; Wang, Xiaochun; Li, Jun; Yan, Dong; Pu, Jian; Chi, Bo; Li, Jian

    2018-05-01

    A 5-cell solid oxide fuel cell (SOFC) stack with external manifold structure is assembled and underwent a durability test with an output of 250 W for nearly 4400 h when current density and operating temperature are 355 mA/cm2 and 750 °C. Cells used in the stack are anode-supported cells (ASC) with yttria-stabilized zirconia (YSZ) electrolytes, Ni/YSZ hydrogen electrodes, and YSZ based composite cathode. The dimension of the cell is 150 × 150 mm (active area: 130 × 130 mm). Ceramic-glass sealant is used in the stack to keep the gas tightness between cells, interconnects and manifolds. Pure hydrogen and dry air are used as fuel and oxidant respectively. The stack has a maximum output of 340 W at 562 mA/cm2 current density at 750 °C. The stack shows a degradation of 1.5% per 1000 h during the test with 2 thermal cycles to room temperature. After the test, the stack was dissembled and examined. The relationship between microstructure changes of interfaces and degradation in the stack are discussed. The microstructure evolution of interfaces between electrode, contact material and current collector are unveiled and their relationship with the degradation is discussed.

  5. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  6. Molecular Computational Investigation of Electron Transfer Kinetics across Cytochrome-Iron Oxide Interfaces

    International Nuclear Information System (INIS)

    Kerisit, Sebastien N.; Rosso, Kevin M.; Dupuis, Michel; Valiev, Marat

    2007-01-01

    The interface between electron transfer proteins such as cytochromes and solid phase mineral oxides is central to the activity of dissimilatory-metal reducing bacteria. A combination of potential-based molecular dynamics simulations and ab initio electronic structure calculations are used in the framework of Marcus' electron transfer theory to compute elementary electron transfer rates from a well-defined cytochrome model, namely the small tetraheme cytochrome (STC) from Shewanella oneidensis, to surfaces of the iron oxide mineral hematite (a-Fe2O3). Room temperature molecular dynamics simulations show that an isolated STC molecule favors surface attachment via direct contact of hemes I and IV at the poles of the elongated axis, with electron transfer distances as small as 9 Angstroms. The cytochrome remains attached to the mineral surface in the presence of water and shows limited surface diffusion at the interface. Ab initio electronic coupling matrix element (VAB) calculations of configurations excised from the molecular dynamics simulations reveal VAB values ranging from 1 to 20 cm-1, consistent with nonadiabaticity. Using these results, together with experimental data on the redox potential of hematite and hemes in relevant cytochromes and calculations of the reorganization energy from cluster models, we estimate the rate of electron transfer across this model interface to range from 1 to 1000 s-1 for the most exothermic driving force considered in this work, and from 0.01 to 20 s-1 for the most endothermic. This fairly large range of electron transfer rates highlights the sensitivity of the rate upon the electronic coupling matrix element, which is in turn dependent on the fluctuations of the heme configuration at the interface. We characterize this dependence using an idealized bis-imidazole heme to compute from first principles the VAB variation due to porphyrin ring orientation, electron transfer distance, and mineral surface termination. The electronic

  7. A Study of the Equality of Cable Insulations by comparing aging trend using an Oxidation Induction Time Measurement Test

    International Nuclear Information System (INIS)

    Park, Kyungheum; Bhang, Keugjin; Jeong, Sunchul

    2014-01-01

    Usually, the environmental qualification test is carried out by the cable manufacturer and the test report is presented while the cable manufacturer supplies the tested cables in nuclear power plant. If a cable manufacturer has environmentally qualified a cable for nuclear power plant more than a decade ago and the composition of the cable material is same, is it acceptable to use the old EQ report for recently manufactured cable? Even though the manufacturer insists the composition of the tested cable and recently manufactured cable's material are same, there can some questions or opposing opinions for two cables, tested cable and recently manufactured cable's equality. In this case, how can I determine the equality for the two cables? It is well known method to use FT-IR to determine the similarity of cable materials. FT-IR is easy tool to compare compositions of each material. But FT-IR method is not proper to compare aging trend of these materials. Oxidation induction time(OIT) testing is a technique that can be used to evaluate aging of organic materials and life assessment technique for cables used in nuclear power plants. In this paper, I studied the OIT technique to compare aging trend for the tested cable and recently manufactured cable to determine the equality for the two cables. To study a equality analysis for cable materials, OIT measurement tests were performed for two cable insulation(produced in 1995 and produced in 2013) which were supplied from same manufacturer. The two cables were irradiated up to 40 Mrad to simulate normal 40 years and thermally aged for 144 hours at 170 .deg. C equals to 40 years qualified life at 90 .deg. C. The OIT measurement were made in order to compare aging trends of the '95 cable and the '13 cable, the test were performed for three sequential steps; initial, after Normal Radiation and after Thermal Aging. The OIT measurement results at the temperature of 225 .deg. C showed very similar degradation

  8. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  9. Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment.

    Science.gov (United States)

    Kao, Chyuan-Haur; Chang, Chia Lung; Su, Wei Ming; Chen, Yu Tzu; Lu, Chien Cheng; Lee, Yu Shan; Hong, Chen Hao; Lin, Chan-Yu; Chen, Hsiang

    2017-08-03

    Magnesium oxide (MgO) sensing membranes in pH-sensitive electrolyte-insulator-semiconductor structures were fabricated on silicon substrate. To optimize the sensing capability of the membrane, CF 4 plasma was incorporated to improve the material quality of MgO films. Multiple material analyses including FESEM, XRD, AFM, and SIMS indicate that plasma treatment might enhance the crystallization and increase the grain size. Therefore, the sensing behaviors in terms of sensitivity, linearity, hysteresis effects, and drift rates might be improved. MgO-based EIS membranes with CF 4 plasma treatment show promise for future industrial biosensing applications.

  10. Thermal insulation

    International Nuclear Information System (INIS)

    Aspden, G.J.; Howard, R.S.

    1988-01-01

    The patent concerns high temperature thermal insulation of large vessels, such as the primary vessel of a liquid metal cooled nuclear reactor. The thermal insulation consists of multilayered thermal insulation modules, and each module comprises a number of metal sheet layers sandwiched between a back and front plate. The layers are linked together by straps and clips to control the thickness of the module. (U.K.)

  11. Cellulose Insulation

    Science.gov (United States)

    1980-01-01

    Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

  12. Surface studies of YBa2Cu3O7-x -matching oxide substrates and interfaces

    International Nuclear Information System (INIS)

    Enevold Thaulov Andersen, J.

    1990-11-01

    Crystallographic changes as a result of heat-treatment at 700-900 deg. C are found for SrTiO 3 (100), MgO(100) and LaAlO 3 (100). The p(2x2) reconstruction of the SrTiO 3 (100) and the superstructures on MgO(100) and on LaAlO 3 (100) thus observed are suggested to be induced by segregation of impurities to the surface. The surface charge-effects which disturb electron- and photon-impact experiments with these insulators are removed by heat-treatments. Deposition of copper results in formation of copper islands on SrTiO 3 (100) and on LaAlO 3 (100). Yttrium forms islands on LaAlO 3 (100) and grows in a layer-by-layer mode on SrTiO 3 (100) and on MgO(100). An yttrium 1x1 epitaxy is observed on the MgO(100) surface, which is suggested to be an YO superstructure. Oxidation of the 1x1 Y/MgO(100) systems diminishes the charge-effects and improves all diffraction and spectroscopic measurements. This may be due to the formation of metallic states around the Fermi level when the film is oxidized. An in situ synthesized YBa 2 Cu 3 O 7 thin film on SrTiO 3 (100) compared to a thick epitaxial YBa 2 Cu 3 O 7-x (001) film on MgO(100) reveals differences in surface electronic structures but not in surface stoichiometries. (au) 18 refs

  13. Microarray study of temperature-dependent sensitivity and selectivity of metal/oxide sensing interfaces

    Science.gov (United States)

    Tiffany, Jason; Cavicchi, Richard E.; Semancik, Stephen

    2001-02-01

    Conductometric gas microsensors offer the benefits of ppm-level sensitivity, real-time data, simple interfacing to electronics hardware, and low power consumption. The type of device we have been exploring consists of a sensor film deposited on a "microhotplate"- a 100 micron platform with built-in heating (to activate reactions on the sensing surface) and thermometry. We have been using combinatorial studies of 36-element arrays to characterize the relationship between sensor film composition, operating temperature, and response, as measured by the device's sensitivity and selectivity. Gases that have been tested on these arrays include methanol, ethanol, dichloromethane, propane, methane, acetone, benzene, hydrogen, and carbon monoxide, and are of interest in the management of environmental waste sites. These experiments compare tin oxide films modified by catalyst overlayers, and ultrathin metal seed layers. The seed layers are used as part of a chemical vapor deposition process that uses each array element's microheater to activate the deposition of SnO2, and control its microstructure. Low coverage (20 Ê) catalytic metals (Pd, Cu, Cr, In, Au) are deposited on the oxides by masked evaporation or sputtering. This presentation demonstrates the value of an array-based approach for developing film processing methods, measuring performance characteristics, and establishing reproducibility. It also illustrates how temperature-dependent response data for varied metal/oxide compositions can be used to tailor a microsensor array for a given application.

  14. A dual enzyme functionalized nanostructured thulium oxide based interface for biomedical application

    Science.gov (United States)

    Singh, Jay; Roychoudhury, Appan; Srivastava, Manish; Solanki, Pratima R.; Lee, Dong Won; Lee, Seung Hee; Malhotra, B. D.

    2013-12-01

    In this paper, we present results of the studies related to fabrication of a rare earth metal oxide based efficient biosensor using an interface based on hydrothermally prepared nanostructured thulium oxide (n-Tm2O3). A colloidal solution of prepared nanorods has been electrophoretically deposited (EPD) onto an indium-tin-oxide (ITO) glass substrate. The n-Tm2O3 nanorods are found to provide improved sensing characteristics to the electrode interface in terms of electroactive surface area, diffusion coefficient, charge transfer rate constant and electron transfer kinetics. The structural and morphological studies of n-Tm2O3 nanorods have been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopic techniques. This interfacial platform has been used for fabrication of a total cholesterol biosensor by immobilizing cholesterol esterase (ChEt) and cholesterol oxidase (ChOx) onto a Tm2O3 nanostructured surface. The results of response studies of the fabricated ChEt-ChOx/n-Tm2O3/ITO bioelectrode show a broad linear range of 8-400 mg dL-1, detection limit of 19.78 mg (dL cm-2)-1, and high sensitivity of 0.9245 μA (mg per dL cm-2)-1 with a response time of 40 s. Further, this bioelectrode has been utilized for estimation of total cholesterol with negligible interference (3%) from analytes present in human serum samples. The utilization of this n-Tm2O3 modified electrode for enzyme-based biosensor analysis offers an efficient strategy and a novel interface for application of the rare earth metal oxide materials in the field of electrochemical sensors and bioelectronic devices.In this paper, we present results of the studies related to fabrication of a rare earth metal oxide based efficient biosensor using an interface based on hydrothermally prepared nanostructured thulium oxide (n-Tm2O3). A colloidal solution of prepared

  15. Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

    International Nuclear Information System (INIS)

    Hahn, Herwig; Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

    2015-01-01

    In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10 13  cm –2 allowing to considerably shift the threshold voltage to more positive values

  16. X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO{sub 2} interface of segmented silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kopsalis, Ioannis; Fretwurst, Eckhart; Garutti, Erika; Klanner, Robert; Schwandt, Joern [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The surface radiation damage of SiO{sub 2} grown on high-ohmic Si, as used for the fabrication of segmented silicon sensors, has been investigated. Circular p- and n-MOSFETs, biased in accumulation and inversion at a field in the SiO{sub 2} of about 500 kV/cm, have been irradiated by X-rays up to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation, the gate voltage has been cycled from inversion to accumulation conditions and back, and from the dependence of the drain-source current, on gate voltage, the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface determined. From the threshold voltage, the effective oxide-charge density is calculated. Using the subthreshold-current technique the contribution of interface traps, in the lower and the upper part of the energy Si bandgap, and of fixed oxide-charge to the effective oxide-charge density has been estimated. Results on the dose dependence of the above quantities, the charging-up and discharging of border traps when changing the gate voltage, and the hole and electron mobilities at the Si-SiO{sub 2} interface are presented.

  17. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  18. Thermal insulation

    International Nuclear Information System (INIS)

    Pinsky, G.P.

    1977-01-01

    Thermal insulation for vessels and piping within the reactor containment area of nuclear power plants is disclosed. The thermal insulation of this invention can be readily removed and replaced from the vessels and piping for inservice inspection, can withstand repeated wettings and dryings, and can resist high temperatures for long periods of time. 4 claims, 3 figures

  19. Structural and electrical evaluation for strained Si/SiGe on insulator

    International Nuclear Information System (INIS)

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  20. Atomically-resolved mapping of polarization and electric fields across ferroelectric-oxide interfaces by Z-contrast imaging

    Science.gov (United States)

    Borisevich, Albina; Chang, Hye Jung; Kalinin, Sergei; Morozovska, Anna; Chu, Ying-Hao; Yu, Pu; Ramesh, Ramamoorthy; Pennycook, Stephen

    2011-03-01

    Polarization, electric field, charge and potential across ferroelectric-oxide interfaces are obtained from direct atomic position mapping by aberration corrected scanning transmission electron microscopy combined with Ginsburg-Landau-Devonshire theory. We compare two antiparallel polarization orientations, which allows separation of the polarization and intrinsic interface charge contributions. Using the Born effective charges, the complete interface electrostatics is obtained in real space, providing an alternative method to holography. The results provide new microscopic insight into the thermodynamics of polarization distribution at the atomic level. Research is sponsored by the of Materials Sciences and Engineering Division, U.S. DOE.

  1. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  2. Simultaneously 'pushing' and 'pulling' graphene oxide into low-polar solvents through a designed interface.

    Science.gov (United States)

    Liu, Zhen; Liu, Jingquan; Wang, Yichao; Razal, Joselito M; Francis, Paul S; Biggs, Mark J; Barrow, Colin J; Yang, Wenrong

    2018-08-03

    Dispersing graphene oxide (GO) in low-polar solvents can realize a perfect self-assembly with functional molecules and application in removal of organic impurities that only dissolve in low-polar solvents. The surface chemistry of GO plays an important role in its dispersity in these solvents. The direct transfer of hydrophilic GO into low-polar solvents, however, has remained an experimental challenge. In this study, we design an interface to transfer GO by simultaneously 'pushing and pulling' the nanosheets into low-polar solvents. Our approach is outstanding due to the ability to obtain monolayers of chemically reduced GO (CRGO) with designed surface properties in the organic phase. Using the transferred GO or CRGO dispersions, we have fabricated GO/fullerene nanocomposites and assessed the ability of CRGOs for dye adsorption. We hope our work can provide a universal approach for the phase transfer of other nanomaterials.

  3. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

    Science.gov (United States)

    Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

    2017-12-01

    The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

  4. Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar; Pulikkotil, J. J.; Schwingenschlö gl, Udo; Singh, Nirpendra

    2011-01-01

    Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

  5. Vacancy induced metallicity at the CaHfO3/SrTiO3 interface

    KAUST Repository

    Nazir, Safdar

    2011-03-31

    Density functional theory is used to study the electronic properties of the oxide heterointerfaceCaHfO3/SrTiO3. Structural relaxation is carried out with and without O vacancies. As compared to related interfaces, strongly reduced octahedral distortions are found. Stoichiometric interfaces between the wide band gap insulatorsCaHfO3 and SrTiO3 turn out to exhibit an insulating state. However, interface metallicity is introduced by O vacancies, in agreement with experiment. The reduced octahedral distortions and necessity of O deficiency indicate a less complicated mechanism for the creation of the interfacial electron gas.

  6. Symmetry-induced deformation and reconstructive phase transformation in metal-oxide interface: the Fe (001) example

    International Nuclear Information System (INIS)

    Lahoche, L.; Universite de Technologie de Compiegne; Lorman, V.; Roelandt, J.M.; Rochal, S.B.

    1996-01-01

    A model is proposed for the structural transformation and corresponding induced deformation in physical three-dimensional interface of the metal-oxide system. The thermodynamical and elastic state of the system is described by the Landau-Ginzbourg free energy. Calculated theoretical phase diagram shows several different types of isothermal growth processes. The model is applied to the case of the oxidation of the (001) Fe surface. (orig.)

  7. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-01-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance

  8. Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces

    KAUST Repository

    Liu, Heng-Jui

    2018-02-01

    The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.

  9. Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces

    KAUST Repository

    Liu, Heng-Jui; Wang, Jing-Ching; Cho, Deok-Yong; Ho, Kang-Ting; Lin, Jheng-Cyuan; Huang, Bo-Chao; Fang, Yue-Wen; Zhu, Yuan-Min; Zhan, Qian; Xie, Lin; Pan, Xiao-Qing; Chiu, Ya-Ping; Duan, Chun-Gang; He, Jr-Hau; Chu, Ying-Hao

    2018-01-01

    The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.

  10. Ab Initio Thermodynamic Modeling of Electrified Metal–Oxide Interfaces: Consistent Treatment of Electronic and Ionic Chemical Potentials

    DEFF Research Database (Denmark)

    Zeng, Zhenhua; Hansen, Martin Hangaard; Greeley, Jeffrey Philip

    2014-01-01

    . In this paper we present a scheme to determine the metal–oxide interface structure at a given set of these environmental parameters based on quantum chemical calculations. As an illustration we determine the structure of a Ni-YSZ anode as a function of electrode potential at 0 and 1000 K. We further describe...

  11. Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Trier, Felix; Kasama, Takeshi

    2015-01-01

    The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Rem...

  12. Effects of oxide replacement with fluoride at the CoFeB interface on interface magnetic anisotropy and its voltage control

    Science.gov (United States)

    Pankieiev, Mykhailo; Kita, Koji

    2018-05-01

    In this paper we report results of improving Co60Fe20B20 interface perpendicular magnetic anisotropy (PMA) by replacing neighbor oxide layer with fluoride one. We expected that fluorine as element with higher than oxide electronegativity could more effectively attract electrons from out-of-plane d orbitals of ferromagnetic, increasing role of in-plane orbitals. By this we wanted to increase PMA and its response to applied voltage bias. Polar magneto-optic Kerr effect measurement show decreasing of out-of-plane magnetic field needed to change magnetization to perpendicular in stacks with oxygen replaced by fluorine as well as increasing of coefficient of response to applied voltage α from < 10 fJ/Vm for CoFeB/Al2O3 interface to 20 fJ/Vm for CoFeB/AlF3/Al2O3 and 22 fJ/Vm for CoFeB/MgF2 stacks. Direct chemical interaction of Co with F was confirmed by x-ray photoelectron spectroscopy (XPS) measurement of Co2p core level region. Moreover angular-resolved XPS showed that F tends to stay at CoFeB interface rather than diffuse out of it.

  13. Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Green, Robert J.; Sutarto, Ronny

    2017-01-01

    Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both...... polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how...... these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer...

  14. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Borgatti, F., E-mail: francesco.borgatti@cnr.it [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna I-40129 (Italy); Torelli, P.; Panaccione, G. [Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, Trieste I-34149 (Italy)

    2016-04-15

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  15. Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

    International Nuclear Information System (INIS)

    Borgatti, F.; Torelli, P.; Panaccione, G.

    2016-01-01

    Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

  16. Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance.

    Science.gov (United States)

    Liang, Zhimin; Su, Mingze; Zhou, Yangyang; Gong, Li; Zhao, Chuanxi; Chen, Keqiu; Xie, Fangyan; Zhang, Weihong; Chen, Jian; Liu, Pengyi; Xie, Weiguang

    2015-11-07

    The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster electron/hole recombination, and the reduction of TMO for effective hole collection. The photovoltaic performance of the Si/TMO heterojunction devices is affected by the interface reaction. MoO3-x are the best hole selecting materials that induce least surface oxidation but strongest reduction. Compared with H-passivation, methyl group passivation is an effective way to reduce the interface reaction and improve the interfacial energy level alignment for better electron and hole collection.

  17. Critical assessment of finite element analysis applied to metal–oxide interface roughness in oxidising zirconium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Platt, P., E-mail: Philip.Platt@manchester.ac.uk [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom); Frankel, P. [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom); Gass, M. [AMEC, Walton House, Faraday Street, Birchwood Park, Risley, Warrington WA3 6GA (United Kingdom); Preuss, M. [University of Manchester, School of Materials, Materials Performance Centre, Manchester M13 9PL (United Kingdom)

    2015-09-15

    As a nuclear fuel cladding material, zirconium alloys act as a barrier between the fuel and pressurised steam or lithiated water environment. Controlling degradation mechanisms such as oxidation is essential to extending the in-service lifetime of the fuel. At temperatures of ∼360 °C zirconium alloys are known to exhibit cyclical, approximately cubic corrosion kinetics. With acceleration in the oxidation kinetics occurring every ∼2 μm of oxide growth, and being associated with the formation of a network of lateral cracks. Finite element analysis has been used previously to explain the lateral crack formation by the development of localised out-of-plane tensile stresses at the metal–oxide interface. This work uses the Abaqus finite element code to assess critically current approaches to representing the oxidation of zirconium alloys, with relation to undulations at the metal–oxide interface and localised stress generation. This includes comparison of axisymmetric and 3D quartered modelling approaches, and investigates the effect of interface geometry and plasticity in the metal substrate. Particular focus is placed on the application of the anisotropic strain tensor used to represent the oxidation mechanism, which is typically applied with a fixed coordinate system. Assessment of the impact of the tensor showed that 99% of the localised tensile stresses originated from the out-of-plane component of the strain tensor, rather than the in-plane expansion as was previously thought. Discussion is given to the difficulties associated with this modelling approach and the requirements for future simulations of the oxidation of zirconium alloys.

  18. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol, E-mail: shkp@kaist.ac.kr, E-mail: kyungcc@kaist.ac.kr [School of Electrical Engineering, KAIST, Daejeon 34141 (Korea, Republic of); Park, Sang-Hee Ko, E-mail: shkp@kaist.ac.kr, E-mail: kyungcc@kaist.ac.kr [Department of Material Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of)

    2016-05-02

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al{sub 2}O{sub 3}, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV{sub th}) was 0 V even after a PBS time (t{sub stress}) of 3000 s under a gate voltage (V{sub G}) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV{sub th} value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV{sub th} values resulting from PBS quantitatively, the average oxide charge trap density (N{sub T}) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N{sub T} resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N{sub T} near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  19. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol; Park, Sang-Hee Ko

    2016-01-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al_2O_3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV_t_h) was 0 V even after a PBS time (t_s_t_r_e_s_s) of 3000 s under a gate voltage (V_G) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV_t_h value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV_t_h values resulting from PBS quantitatively, the average oxide charge trap density (N_T) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N_T resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N_T near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  20. Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames

    Science.gov (United States)

    Lee, Ah Rahm; Baek, Gwang Ho; Kim, Tae Yoon; Ko, Won Bae; Yang, Seung Mo; Kim, Jongmin; Im, Hyun Sik; Hong, Jin Pyo

    2016-07-01

    Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5-x/Ta/Ta2O5-x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5-x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.

  1. Microstructure and Oxidation of a MAX Phase/Superalloy Hybrid Interface

    Science.gov (United States)

    Smialek, James L.; Garg, Anita

    2014-01-01

    Corrosion resistant, strain tolerant MAX phase coatings are of interest for turbine applications. Thin Cr2AlC MAX phase wafers were vacuum diffusion bonded to an advanced turbine disk alloy, LSHR, at 1100 C. The interface, examined by optical and scanning electron microscopy, revealed a primary diffusion zone consisting of 10 micrometers of beta-Ni(Co)Al, decorated with various NiCoCrAl, MC and M3B2 precipitates. On the Cr2AlC side, an additional 40 micrometers Al-depletion zone of Cr7C3 formed in an interconnected network with the beta-Ni(Co)Al. Oxidation of an exposed edge at 800 C for 100 h produced a fine-grained lenticular alumina scale over Cr2AlC and beta-Ni(Co)Al, with coarser chromia granules over the Cr7C3 regions. Subsequent growth of the diffusion layers was only 5 micrometers in total. A residual stress of 500 MPa was estimated for the MAX phase layer, but no interfacial damage was observed. Subsequent tests for 1000 h reveal similar results.

  2. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    International Nuclear Information System (INIS)

    Capriotti, M.; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D.; Lagger, P.; Ostermaier, C.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO 2 /AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO 2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C p , and conductance, G p . C p -voltage and G p -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R br and the effective channel resistance. In particular, in the spill-over region, the drop of C p with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R br with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D it , from the G p /ω vs. angular frequency ω curves. A peak in G p /ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G p /ω vs. ω peak saturates at high D it , which can lead to underestimation of D it . Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage

  3. Thermal insulation

    International Nuclear Information System (INIS)

    Durston, J.G.; Birch, W.; Facer, R.I.; Stuart, R.A.

    1977-01-01

    Reference is made to liquid metal cooled nuclear reactors. In the arrangement described the reactor vessel is clad with thermal insulation comprising a layer of insulating blocks spaced from the wall and from each other; each block is rigidly secured to the wall, and the interspaces are substantially closed against convectional flow of liquid by resilient closure members. A membrane covering is provided for the layer of blocks, with venting means to allow liquid from the reactor vessel to penetrate between the covering and the layer of blocks. The membrane covering may comprise a stainless steel sheet ribbed in orthogonal pattern to give flexibility for the accommodation of thermal strain. The insulating blocks may be comprised of stainless steel or cellular or porous material and may be hollow shells containing ceramic material or gas fillings. (U.K.)

  4. Characterization of silicon-on-insulator wafers

    Science.gov (United States)

    Park, Ki Hoon

    The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

  5. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  6. Topological insulators

    CERN Document Server

    Franz, Marcel

    2013-01-01

    Topological Insulators, volume six in the Contemporary Concepts of Condensed Matter Series, describes the recent revolution in condensed matter physics that occurred in our understanding of crystalline solids. The book chronicles the work done worldwide that led to these discoveries and provides the reader with a comprehensive overview of the field. Starting in 2004, theorists began to explore the effect of topology on the physics of band insulators, a field previously considered well understood. However, the inclusion of topology brings key new elements into this old field. Whereas it was

  7. Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

    International Nuclear Information System (INIS)

    Schumacher, Daniel

    2013-01-01

    The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La 0.66 Sr 0.33 MnO 3 /SrTiO 3 (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La 0.5 Sr 0.5 MnO 3 (LSMO) and BaTiO 3 (BTO). A possible dependence of the interface near magnetic structure of La 1-x Sr x MnO 3 having a doping level x close to the ferromagnetic-antiferromagnetic phase

  8. Interplay between magnetic and dielectric phenomena at transition metal oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, Daniel

    2013-10-01

    The present work is concerned with the preparation, characterization and analysis of thin film heterostructures of perovskite oxide materials. Two different systems have been analyzed in detail: La{sub 0.66}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3} (LSMO/STO) heterostructures have been investigated in order to understand the unusual occurrence of an exchange bias effect in multilayers of these two oxides. Monocrystalline LSMO single and LSMO/STO bilayers have been grown on STO by both High Oxygen Pressure Sputter Deposition (HSD) and Pulsed Laser Deposition. It was possible to reproduce the Exchange Bias effect in the samples grown by HSD by reducing the oxygen pressure during the layer growth. In fact, the size of the effect can be increased by further reduction of the oxygen pressure. The macroscopic sample analysis by X-ray Diffraction and Vibrating Sample Magnetometry suggests that the occurence of the Exchange Bias effect is linked to oxygen deficiencies in the LSMO layer. By combining X-ray Reflectometry, Polarized Neutron Reflectometry and X-ray Resonant magnetic Scattering (XRMS), the magnetic depth profile of the samples has been determined. By this, a region in LSMO at the interface to STO has been detected, where the magnetic moment is strongly suppressed. By putting together the results of the macroscopic sample analysis and the scattering experiments, an explanation for the occurence of the effect can be given: It is proposed, that a combination of strain and oxygen deficiencies shifts the LSMO at the interface in the antiferromagnetic phase of the LSMO strain vs. doping phase diagram. This interface region thus couples to the ferromagnetic part of the LSMO causing the Exchange Bias effect. The second heterostructure system under investigation in this work are bilayers of La{sub 0.5}Sr{sub 0.5}MnO{sub 3} (LSMO) and BaTiO{sub 3} (BTO). A possible dependence of the interface near magnetic structure of La{sub 1-x}Sr{sub x}MnO{sub 3} having a doping level x

  9. Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

    Science.gov (United States)

    Landheer, Kees; Bronsveld, Paula C. P.; Poulios, Ioannis; Tichelaar, Frans D.; Kaiser, Monja; Schropp, Ruud E. I.; Rath, Jatin K.

    2017-02-01

    An Ar-H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c-Si/SiOx:H/a-Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar-H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c-Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

  10. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Science.gov (United States)

    Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-06-01

    The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

  11. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  12. Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

    Science.gov (United States)

    Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2012-02-01

    The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

  13. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Chen, Weifeng; Wu, Weijing; Zhou, Lei; Xu, Miao; Wang, Lei; Ning, Honglong; Peng, Junbiao

    2018-03-11

    A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance-voltage characteristics and current-voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson's equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS) simultaneously.

  14. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Weifeng Chen

    2018-03-01

    Full Text Available A semi-analytical extraction method of interface and bulk density of states (DOS is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs. In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco. As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS simultaneously.

  15. A Universal Method to Engineer Metal Oxide-Metal-Carbon Interface for Highly Efficient Oxygen Reduction.

    Science.gov (United States)

    Lv, Lin; Zha, Dace; Ruan, Yunjun; Li, Zhishan; Ao, Xiang; Zheng, Jie; Jiang, Jianjun; Chen, Hao Ming; Chiang, Wei-Hung; Chen, Jun; Wang, Chundong

    2018-03-27

    Oxygen is the most abundant element in the Earth's crust. The oxygen reduction reaction (ORR) is also the most important reaction in life processes and energy converting/storage systems. Developing techniques toward high-efficiency ORR remains highly desired and a challenge. Here, we report a N-doped carbon (NC) encapsulated CeO 2 /Co interfacial hollow structure (CeO 2 -Co-NC) via a generalized strategy for largely increased oxygen species adsorption and improved ORR activities. First, the metallic Co nanoparticles not only provide high conductivity but also serve as electron donors to largely create oxygen vacancies in CeO 2 . Second, the outer carbon layer can effectively protect cobalt from oxidation and dissociation in alkaline media and as well imparts its higher ORR activity. In the meanwhile, the electronic interactions between CeO 2 and Co in the CeO 2 /Co interface are unveiled theoretically by density functional theory calculations to justify the increased oxygen absorption for ORR activity improvement. The reported CeO 2 -Co-NC hollow nanospheres not only exhibit decent ORR performance with a high onset potential (922 mV vs RHE), half-wave potential (797 mV vs RHE), and small Tafel slope (60 mV dec -1 ) comparable to those of the state-of-the-art Pt/C catalysts but also possess long-term stability with a negative shift of only 7 mV of the half-wave potential after 2000 cycles and strong tolerance against methanol. This work represents a solid step toward high-efficient oxygen reduction.

  16. Giant tunability of the two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3

    DEFF Research Database (Denmark)

    Niu, Wei; Zhang, Yu; Gan, Yulin

    2017-01-01

    a dielectric solid insulator, i.e. in the configuration of conventional field-effect transistors. To surpass this long-standing limit, we used ionic liquids as the dielectric layer for electrostatic gating of oxide interfaces in an electric double layer transistor (EDLT) configuration. Herein, we reported......Two-dimensional electron gases (2DEGs) formed at the interface between two oxide insulators provide a rich platform for the next generation of electronic devices. However, their high carrier density makes it rather challenging to control the interface properties under a low electric field through...

  17. Contact Resistance of Ceramic Interfaces Between Materials Used for Solid Oxide Fuel Cell Applications

    DEFF Research Database (Denmark)

    Koch, Søren

    The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may....... The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constric-tion at high temperatures. The measured contact resistance was comparable to the resis-tance calculated on basis of the contact...... areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential...

  18. Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study

    KAUST Repository

    Cossu, Fabrizio; Eyert, V.; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid

  19. Electric field control of the γ-Al2O3/SrTiO3 interface conductivity at room temperature

    DEFF Research Database (Denmark)

    Christensen, Dennis Valbjørn; Trier, Felix; von Soosten, Merlin

    2016-01-01

    Controlling interfaces using electric fields is at the heart of modern electronics. The discovery of the conducting interface between the two insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) has led to a number of interesting electric field-dependent phenomena. Recently, it was shown that replacing...

  20. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

    Energy Technology Data Exchange (ETDEWEB)

    Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

    2017-02-15

    Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

  1. Interface control of atomic layer deposited oxide coatings by filtered cathodic arc deposited sublayers for improved corrosion protection

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, Emma, E-mail: emma.harkonen@helsinki.fi [Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland); Tervakangas, Sanna; Kolehmainen, Jukka [DIARC-Technology Inc., Espoo (Finland); Díaz, Belén; Światowska, Jolanta; Maurice, Vincent; Seyeux, Antoine; Marcus, Philippe [Laboratoire de Physico-Chimie des Surfaces, CNRS (UMR 7075) – Chimie ParisTech (ENSCP), F-75005 Paris (France); Fenker, Martin [FEM Research Institute, Precious Metals and Metals Chemistry, D-73525 Schwäbisch Gmünd (Germany); Tóth, Lajos; Radnóczi, György [Research Centre for Natural Sciences HAS, (MTA TKK), Budapest (Hungary); Ritala, Mikko [Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland)

    2014-10-15

    Sublayers grown with filtered cathodic arc deposition (FCAD) were added under atomic layer deposited (ALD) oxide coatings for interface control and improved corrosion protection of low alloy steel. The FCAD sublayer was either Ta:O or Cr:O–Ta:O nanolaminate, and the ALD layer was Al{sub 2}O{sub 3}–Ta{sub 2}O{sub 5} nanolaminate, Al{sub x}Ta{sub y}O{sub z} mixture or graded mixture. The total thicknesses of the FCAD/ALD duplex coatings were between 65 and 120 nm. Thorough analysis of the coatings was conducted to gain insight into the influence of the FCAD sublayer on the overall coating performance. Similar characteristics as with single FCAD and ALD coatings on steel were found in the morphology and composition of the duplex coatings. However, the FCAD process allowed better control of the interface with the steel by reducing the native oxide and preventing its regrowth during the initial stages of the ALD process. Residual hydrocarbon impurities were buried in the interface between the FCAD layer and steel. This enabled growth of ALD layers with improved electrochemical sealing properties, inhibiting the development of localized corrosion by pitting during immersion in acidic NaCl and enhancing durability in neutral salt spray testing. - Highlights: • Corrosion protection properties of ALD coatings were improved by FCAD sublayers. • The FCAD sublayer enabled control of the coating-substrate interface. • The duplex coatings offered improved sealing properties and durability in NSS. • The protective properties were maintained during immersion in a corrosive solution. • The improvements were due to a more ideal ALD growth on the homogeneous FCAD oxide.

  2. Contact resistance of ceramic interfaces between materials used for solid oxide fuel cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Koch, S.

    2002-01-01

    The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may be smaller or larger than the constriction resistance. The contact resistance between pairs of three different materials were analysed (strontium doped lanthanum manganite, yttria stabilised zirconia and strontium and nickel doped lanthanum cobaltite), and the effects of temperature, atmosphere, polarisation and mechanical load on the contact resistance were investigated. The investigations revealed that the mechanical load of a ceramic contact has a high influence on the contact resistance, and generally power law dependence between the contact resistance and the mechanical load was found. The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constriction at high temperatures. The measured contact resistance was comparable to the resistance calculated on basis of the contact areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential barriers to model the observed behaviour. The current-voltage behaviour of the YSZ contact interfaces was only weakly non-linear, and could be described by 22{+-}1 barriers in series. Contact interfaces with sinterable contact layers were also investigated, and the measured contact resistance for these interfaces were more than 10 times less than for the other interfaces. (au)

  3. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

    Science.gov (United States)

    Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

    2016-12-01

    The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

  4. Development of electrical insulator coatings for fusion power applications

    International Nuclear Information System (INIS)

    Park, J.H.; Domenico, T.; Dragel, G.; Clark, R.

    1995-01-01

    In the design of liquid-metal cooling systems for fusion blanket applications, the corrosion resistance of structural materials and the magnetohydrodynamic (MHD) force and its subsequent influence on thermal hydraulics and corrosion are major concerns. The objective of this study was to develop stable corrosion-resistant electrical insulator coatings at the liquid-metal-structural-material interface, with emphasis on electrically insulating coatings that prevent adverse MHD-generated currents from passing through the structural walls. Vanadium and V-base alloys (V-Ti or V-Ti-Cr) are leading candidate materials for structural applications in fusion reactors. When the system is cooled by liquid metals, insulator coatings are required on piping surfaces in contact with the coolant. Various intermetallic films were produced on V, V-5Ti, and V-20Ti, V-5Cr-5Ti, and V-15Cr-5Ti, and Ti, and on types 304 and 316 stainless steel. The intermetallic layers were developed by exposure of the materials to liquid Li containing 3-5at.% dissolved metallic solute (e.g. Al, Be, Mg, Si, Ca, Pt, and Cr) at temperatures of 416-880 C. Subsequently, electrical insulator coatings were produced by reaction of the reactive layers with dissolved N in liquid Li or by air oxidation under controlled conditions at 600-1000 C. These reactions converted the intermetallic layers to electrically insulating oxide-nitride or oxynitride layers. This coating method is applicable to reactor components. The liquid metal can be used over and over because only the solutes are consumed within the liquid metal. The technique can be applied to various shapes (e.g. inside or outside of tubes, complex geometrical shapes) because the coating is formed by liquid-phase reaction. This paper discusses initial results on the nature of the coatings (composition, thickness, adhesion, surface coverage) and their in situ electrical resistivity characteristics in liquid Li at high temperatures. (orig.)

  5. Insulating materials for optoelectronics

    International Nuclear Information System (INIS)

    Agullo-Lopez, F.

    1990-01-01

    Optoelectronics is an interdisciplinary field. Basic functions of an optoelectronic system include the generator of the optical signal, its transmission and handling and, finally, its detection, storage and display. A large variety of semiconductor and insulating materials are used or are being considered to perform those functions. The authors focus on insulating materials, mostly oxides. For signal generation, tunable solid state lasers, either vibronic or those based oon colour centres are briefly described, and their main operating parameters summarized. Reference is made to some developments on fiber and waveguide lasers. Relevant physical features of the silica fibres used for low-loss, long-band, optical transmission are reviewed, as well as present efforts to further reduce attenuation in the mid-infrared range. Particular attention is paid to photorefractive materials (LiNbO 3 , BGO, BSO, etc.), which are being investigated

  6. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    Science.gov (United States)

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-12-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  7. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida

    2017-12-29

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  8. Modelling of multicomponent diffusion in a two-phase oxide-metal corium pool by a diffuse interface method

    International Nuclear Information System (INIS)

    Cardon, Clement

    2016-01-01

    This Ph.D. topic is focused on the modelling of stratification kinetics for an oxide-metal corium pool (U-O-Zr-steel system) in terms of multicomponent and multiphase diffusion. This work is part of a larger research effort for the development of a detailed corium pool modelling based on a CFD approach for thermal hydraulics. The overall goal is to improve the understanding of the involved phenomena and obtain closure laws for integral macroscopic models. The phase-field method coupled with an energy functional using the CALPHAD method appears to be relevant for this purpose. In a first part, we have developed a diffuse interface model in order to describe the diffusion process in the U-O system. This model has been coupled with a CALPHAD thermodynamic database and its parameterization has been developed with, in particular, an up-scaling procedure related to the interface thickness. Then, within the framework of a modelling for the U-O-Zr ternary system, we have proposed a generalization of the diffuse interface model through an assumption of local equilibrium for redox mechanisms. A particular attention was paid to the model analysis by 1D numerical simulations with a special focus on the steady state composition profiles. Finally we have applied this model to the U-O-Zr-Fe system. For that purpose, we have considered a configuration close to small-scale experimental tests of oxide-metal corium pool stratification. (author) [fr

  9. Study of interface properties in LaAlO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Thiel, Stefan Patrick

    2009-01-01

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  10. A Study on N{sub 2}O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Doohyung; Park, Kunsik; Yoo, Seongwook; Kim, Sanggi; Lee, Jinhwan; Kim, Kwangsoo [Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

    2017-08-15

    The effect of N{sub 2}O direct oxidation processes with re-oxidation on SiC/SiO{sub 2} interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed N{sub 2}O direct oxidation processes with re-oxidation, oxides were grown in N{sub 2}O ambient, diluted in high-purity N{sub 2} to 10% concentration, for 5 h at 1230 ℃. After the growth, some samples were annealed additionally at 1200 ℃ in O{sub 2} or H{sub 2}O for 20 min. N{sub 2}O direct oxidation with re-oxidation processes was confirmed that SiC/SiO{sub 2} interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality SiC/SiO{sub 2} interface properties.

  11. Interface modification of organic photovoltaics by combining molybdenum oxide (MoO{sub x}) and molecular template layer

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Haichao [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Yang, Junliang, E-mail: junliang.yang@csu.edu.cn [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Fu, Lin; Xiong, Jian; Yang, Bingchu; Ouyang, Jun; Zhou, Conghua; Huang, Han [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Gao, Yongli [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 (United States)

    2015-01-01

    We report discrete heterojunction small molecular organic photovoltaics (OPVs) with enhanced performance by modifying the interface using molybdenum oxide (MoO{sub x}) and molecular template layer perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA). A large increase in open-circuit voltage was obtained in copper phthalocyanine/fullerene, i.e., CuPc/C{sub 60} and CuPc/PCBM, discrete planar heterojunction photovoltaics with an insertion of 5 nm MoO{sub x} hole transport layer at the interface between the anode electrode and the CuPc donor layer. It results from the band bending at the interface and the pinning of the highest occupied molecular orbital level of CuPc to the Fermi level of MoO{sub x} due to the defect states (oxygen vacancies) in MoO{sub x} thin films. Moreover, the short-circuit current showed an efficient improvement by inserting a 1 nm PTCDA layer at the interface between the MoO{sub x} layer and the CuPc layer. The PTCDA layer induces the growth of CuPc thin film with lying-down molecular arrangement, supporting the charge transports along the vertical direction. The power conversion efficiencies of CuPc/C{sub 60} and CuPc/PCBM discrete planar heterojunction photovoltaic devices were improved from about 0.80% to 1.50% with inserting both MoO{sub x} and PTCDA layers. The results suggest that the performance of organic discrete planar heterojunction photovoltaics could be optimized by interface modification with combining hole transport layer and molecular template layer, which are potentially suitable for other highly efficient OPVs, such as small molecular tandem OPVs. - Highlights: • Organic small molecule photovoltaics were fabricated by interface modification. • An inserted molybdenum oxide layer largely enhances open-circuit voltage. • An inserted molecular template layer dramatically improves short-circuit current. • The power conversion efficiencies are almost doubled with interface modification.

  12. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  13. RGD Peptide-Grafted Graphene Oxide as a New Biomimetic Nano interface for Impedance-Monitoring Cell Behaviors

    International Nuclear Information System (INIS)

    Li, J.; Zheng, L.; Zeng, L.; Zhang, Y.; Jiang, L.; Song, J.; Li, J.; Zheng, L.; Song, J.; Li, J.; Zheng, L.; Song, J.

    2016-01-01

    A new biomimetic nano interface was constructed by facile grafting the bioactive arginylglycylaspartic acid (RGD) peptide on the graphene oxide (GO) surface through carbodiimide and N-hydroxysuccinimide coupling amidation reaction. The formed RGD-GO nano composites own unique two-dimensional structure and desirable electrochemical performance. The linked RGD peptides could improve GO∼s biocompatibility and support the adhesion and proliferation of human periodontal ligament fibroblasts (HPLFs) on RGD-GO biofilm surface. Furthermore the biologically active RGD-GO nano composites were demonstrated as a potential biomimetic nano interface for monitoring cell bio behaviors by electrochemical impedance spectroscopy (EIS). By analysis of the data obtained from equivalent circuit-fitting impedance spectroscopy, the information related to cell membrane capacitance, cell-cell gap resistance, and cell-electrode interface gap resistance in the process of cell adhesion and proliferation could be obtained. Besides, this proposed impedance-based cell sensor could be used to assess the inhibition effect of the lipopolysaccharide (LPS) on the HPLFs proliferation. Findings from this work suggested that RGD peptide functionalized GO nano materials may be not only applied in dental tissue engineering but also used as a sensor interface for electrochemical detection and analysis of cell behaviors in vitro.

  14. Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Ou, Haiyan

    2010-01-01

    An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering...... the width of the silicon-on-insulator waveguide from 450 nm down to less than 15 nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler...... for transverse-magnetic and transverse-electric modes are ~0.36 dB and ~0.66 dB per connection, respectively....

  15. Calcium carbonate electronic-insulating layers improve the charge collection efficiency of tin oxide photoelectrodes in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Shaikh, Shoyebmohamad F.; Mane, Rajaram S.; Hwang, Yun Jeong; Joo, Oh-Shim

    2015-01-01

    In dye-sensitized solar cells (DSSCs), a surface passivation layer has been employed on the tin oxide (SnO 2 ) photoanodes to enhance the charge collection efficiency, and thus the power conversion efficiency. Herein, we demonstrate that the electronic-insulating layering of calcium carbonate (CaCO 3 ) can improve the charge collection efficiency in dye-sensitized solar cells designed with photoanodes. In order to evaluate the effectiveness of CaCO 3 layering, both layered and pristine SnO 2 photoanodes are characterized with regard to their structures, morphologies, and photo-electrochemical measurements. The SnO 2 -6L CaCO 3 photoanode has demonstrated as high as 3.5% power conversion efficiency; 3.5-fold greater than that of the pristine SnO 2 photoanode. The enhancement in the power conversion efficiency is corroborated with the number of the dye molecules, the passivation of surface states, a negative shift in the conduction band position, and the reduced electron recombination rate of photoelectrons following the coating of the CaCO 3 surface layer

  16. Oxide formation and precipitation behaviors on interface of F82H steel joints during HIPing and hot pressing

    International Nuclear Information System (INIS)

    Kishimoto, H.; Ono, T.; Sakasegawa, H.; Tanigawa, H.; Ando, M.; Shibayama, T.; Kohno, Y.; Kohyama, A.

    2013-01-01

    Joining technologies for F82H steels are important issues for the development of fusion energy. The hot isostatic pressing (HIP) method is appropriate for consolidating the first wall of the blanket because of the flexibility of the shape of HIPed products. The HIP method is planned for fabricating a complex-shaped first wall component with built-in cooling channels; thus, accumulation of studies of microstructural and mechanical property changes, especially lower toughness of the HIPed joints, is essential. Present research aims to reveal the microstructural evolution of F82H joints fabricated by the HIP method compared with joints fabricated by hot pressing, focusing on the formation of oxides on the interface. F82H joints were characterized using 1/3-scale Charpy V-notch impact test, transmission electron microscope, scanning electron microscope, and electron probe analysis to survey the microstructural characteristics of the interface

  17. Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

    Science.gov (United States)

    Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

    2003-12-31

    Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

  18. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2003-11-25

    A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

  19. Effects of conducting oxide barrier layers on the stability of Crofer® 22 APU/Ca3Co4O9 interfaces

    DEFF Research Database (Denmark)

    Holgate, Tim C.; Han, Li; Wu, NingYu

    2014-01-01

    Practical implementation of oxide thermoelectrics on an industrial or commercial scale for waste heat energy conversion requires the development of chemically stable interfaces between metal interconnects and oxide thermoelements that exhibit low electrical contact resistances. A commercially...... available high-chrome iron alloy (i.e., Crofer® 22 APU) serving as the interconnect metal was spray coated with LaNi0.6Fe0.4O3 (LNFO) or (Mn,Co)3O4 spinel and then interfaced with a p-type thermoelectric material—calcium cobaltate (Ca3Co4O9)—using spark plasma sintering. The interfaces have been...

  20. Optical and electrical experiments at some transition-metal oxide foil-electrolyte interfaces

    International Nuclear Information System (INIS)

    Sari, S.O.; Ahlgren, W.L.

    1977-01-01

    Metal-oxide layers formed from transition-metal foils oxidized by heating in air have been examined for their photoelectrolytic response. The metals examined are Y, Ti, Zr, Hf, V, Nb, Ta, Mo, W, and Pt. Weak photoeffects are observed for oxide layers of all of these metals. Sizable light-dependent oxygen gas evolution rates are found in Ti and also in W oxides. The spectral dependence of the oxygen response in these compounds is investigated, and interpretation is given of these experiments

  1. Nanoscale Chemical and Valence Evolution at the Metal/Oxide Interface: A Case Study of Ti/SrTiO 3

    KAUST Repository

    Li, Yangyang

    2016-06-27

    Metal/oxide interfaces are ubiquitous in a wide range of applications such as electronics, photovoltaics, memories, catalysis, and sensors. However, there have been few investigations dedicated to the nanoscale structural and chemical characteristics of these buried interfaces. In this work, the metal/oxide interface between Ti and SrTiO3 (STO) is examined as a prototypical system using high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. An atomic-thin Ti2O3-like layer at the Ti/STO interface prepared at room temperature is discovered, and first-principles calculations predict a metallic band structure of this 2D electron system. As a universal feature of such interfaces prepared at different temperatures, near the interface nanoscale oxygen-deficient domains and continuous modulation of Ti oxidation states are found. Overall, these results directly reveal complex chemical and valence evolutions at the metal/oxide interfaces, providing microscopic insights on such heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  2. First-principles investigation of the effect of oxidation on the electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface

    Energy Technology Data Exchange (ETDEWEB)

    Sakhraoui, T., E-mail: tsakhrawi@yahoo.com [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France); Said, M. [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France)

    2017-06-15

    Highlights: • Density functional theory is used to study the interface between the FeRh alloy and MgO. • We focus on the effect of the oxidation on the electronic structure and magnetic properties of the FeRh/MgO (0 0 1) interface. • We show the change on the structure of the Fe-d states. • We examine the charge transfer and the local spin density modification after interface oxidation. - Abstract: The effect of interfacial oxidation on electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface is studied by ab initio methods. The results show the formation of an interfacial FeO-like layer between the FeRh and the MgO barrier, which has a direct impact on Fe e{sub g} states at the interface. It is shown that these e{sub g} states are more affected than that the t{sub 2g} states at the Fermi level due to the strong hybridization of these states with the p-states of oxygen. Thus, the oxidation modifies crucially the electronic structure and the magnetic properties as compared to those of an ideal interface. In particular, it was found that spin polarization of the ferromagnetic state is substantially enhanced. A simple two-current Julliere model shows that the TMR increases with oxidation.

  3. Tank Insulation

    Science.gov (United States)

    1979-01-01

    For NASA's Apollo program, McDonnell Douglas Astronautics Company, Huntington Beach, California, developed and built the S-IVB, uppermost stage of the three-stage Saturn V moonbooster. An important part of the development task was fabrication of a tank to contain liquid hydrogen fuel for the stage's rocket engine. The liquid hydrogen had to be contained at the supercold temperature of 423 degrees below zero Fahrenheit. The tank had to be perfectly insulated to keep engine or solar heat from reaching the fuel; if the hydrogen were permitted to warm up, it would have boiled off, or converted to gaseous form, reducing the amount of fuel available to the engine. McDonnell Douglas' answer was a supereffective insulation called 3D, which consisted of a one-inch thickness of polyurethane foam reinforced in three dimensions with fiberglass threads. Over a 13-year development and construction period, the company built 30 tanks and never experienced a failure. Now, after years of additional development, an advanced version of 3D is finding application as part of a containment system for transporting Liquefied Natural Gas (LNG) by ship.

  4. Method of manufacturing a thermally insulating body

    Energy Technology Data Exchange (ETDEWEB)

    McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.

    1988-10-11

    A method of manufacturing a microporous thermally insulating body comprises mixing together a finely divided microporous insulating material such as silica aerogel or pyrogenic silica and a solid ammonia-generating compound in particulate form, and compressing the mixture to form a thermally insulating body. The ammonia-generating compound is dispersed evenly throughout the insulating material and may comprise, for example, ammonium carbonate, ammonium acetate or urea. Preferably, the ammonia-generating compound comprises a mixture of about one third by weight of ammonium carbonate and about two thirds by weight of ammonium bicarbonate together with a small proportion of magnesium oxide. Experiments are described which illustrate the manufacturing process. 6 tabs.

  5. Presence, distribution, and diversity of iron-oxidizing bacteria at a landfill leachate-impacted groundwater surface water interface

    DEFF Research Database (Denmark)

    Yu, R.; Gan, P.; Mackay, A.A.

    2010-01-01

    ) were dominated by members of the Bradyrhizobiaceae and Comamonadaceae; clones from the deeper sediments were phylogenetically more diverse, dominated by members of the Rhodocyclaceae. The iron deposition profiles indicated that active iron oxidation occurred only within the near-to-surface GSI......We examined the presence of iron-oxidizing bacteria (IOB) at a groundwater surface water interface (GSI) impacted by reduced groundwater originating as leachate from an upgradient landfill. IOB enrichments and quantifications were obtained, at high vertical resolution, by an iron/oxygen opposing...... site mirrored the IOB distribution. Clone libraries from two separate IOB enrichments indicated a stratified IOB community with clear differences at short vertical distances. Alpha- and Betaproteobacteria were the dominant phylotypes. Clones from the near-surface sediment (1-2 cm below ground surface...

  6. Metal-insulator transitions

    Science.gov (United States)

    Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

    1998-10-01

    Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

  7. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

    Science.gov (United States)

    Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

    2017-04-01

    We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

  8. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

    Science.gov (United States)

    Burton, J D; Tsymbal, E Y

    2011-04-15

    A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

  9. Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

    Energy Technology Data Exchange (ETDEWEB)

    Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

    2011-10-31

    Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

  10. Handleable shapes of thermal insulation material

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, J. T.

    1989-01-17

    Handleable and machineable shapes of thermal insulation material are made by compacting finely divided thermal insulation material into the cells of a reinforcing honeycomb insulation material into the cells of a reinforcing honeycomb structure. The finely divided thermal insulation material may be, for example, silica aerogel, pyrogenic silica, carbon black, silica gel, volatilised silica, calcium silicate, vermiculate or perlite, or finely divided metal oxides such as alumina or titania. The finely divided thermal insulation material may include an infra-red opacifier and/or reinforcing fibres. The reinforcing honeycomb structure may be made from, for example, metals such as aluminium foil, inorganic materials such as ceramics, organic materials such as plastics materials, woven fabrics or paper. A rigidiser may be employed. The shapes of thermal insulation material are substantially rigid and may be machines, for example by mechanical or laser cutting devices, or may be formed, for example by rolling, into curved or other shaped materials. 12 figs.

  11. Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracing

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Döbeli, M.; Pomjakushina, E.

    2017-01-01

    , the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By mapping the oxygen profile across the interface between STO18 and disordered LaAlO3 or yttria...

  12. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco; Schirra, Laura K.; Winget, Paul; Kozlik, Michael; Ndione, Paul F.; Sigdel, Ajaya K.; Berry, Joseph J.; Forker, Roman; Bredas, Jean-Luc; Fritz, Torsten; Monti, Oliver L. A.

    2015-01-01

    with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron

  13. Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces

    NARCIS (Netherlands)

    Huijben, Mark; Yu, P.; Martin, L.W.; Molegraaf, Hajo; Chu, Y.H.; Holcomb, M.B.; Balke, N.; Rijnders, Augustinus J.H.M.; Ramesh, R.

    2013-01-01

    Exchange bias coupling at the multiferroic- ferromagnetic interface in BiFeO3/La0.7Sr0.3MnO3 heterostructures exhibits a critical thickness for ultrathin BiFeO3 layers of 5 unit cells (2 nm). Linear dichroism measurements demonstrate the dependence on the BiFeO3 layer thickness with a strong

  14. Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.

    Science.gov (United States)

    Saha, Avijit; Viswanatha, Ranjani

    2017-03-28

    Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe 3 O 4 /CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (H E ) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.

  15. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  16. Graphene Oxide Monolayer as a Compatibilizer at the Polymer-Polymer Interface for Stabilizing Polymer Bilayer Films against Dewetting.

    Science.gov (United States)

    Kim, Tae-Ho; Kim, Hyeri; Choi, Ki-In; Yoo, Jeseung; Seo, Young-Soo; Lee, Jeong-Soo; Koo, Jaseung

    2016-12-06

    We investigate the effect of adding graphene oxide (GO) sheets at the polymer-polymer interface on the dewetting dynamics and compatibility of immiscible polymer bilayer films. GO monolayers are deposited at the poly(methyl methacrylate) (PMMA)-polystyrene (PS) interface by the Langmuir-Schaefer technique. GO monolayers are found to significantly inhibit the dewetting behavior of both PMMA films (on PS substrates) and PS films (on PMMA substrates). This can be interpreted in terms of an interfacial interaction between the GO sheets and these polymers, which is evidenced by the reduced contact angle of the dewet droplets. The favorable interaction of GO with both PS and PMMA facilitates compatibilization of the immiscible polymer bilayer films, thereby stabilizing their bilayer films against dewetting. This compatibilization effect is verified by neutron reflectivity measurements, which reveal that the addition of GO monolayers broadens the interface between PS and the deuterated PMMA films by 2.2 times over that of the bilayer in the absence of GO.

  17. Semiconductor growth on an oxide using a metallic surfactant and interface studies for potential gate stacks from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Reyes Huamantinco, Andrei

    2008-05-09

    In this work the epitaxial growth of germanium on SrHfO{sub 3}(001), and the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) and SrTiO{sub 3}/GaAs(001) interfaces were studied theoretically using the Projector-Augmented Wave (PAW) method. The PAW method is based on Density Functional Theory and it is implemented in the Car-Parrinello Ab-Initio Molecular Dynamics. The goal of the germanium growth on SrHfO{sub 3}(001) is to form a germanium film with low density of defects and smooth morphology, to be used as channel in a transistor. The feasibility of using a third material to achieve germanium layer-by-layer growth was investigated. The formation of an ordered strontium film on a SrO-terminated oxide substrate, to be used as template for germanium overgrowth, was studied. Deposition of germanium on the strontium 1ML template results in wetting and thus a change of the growth mode to layer-by-layer. The germanium surface is then passivated and a germanium compound is initially formed with strontium at the surface and interface. The interfacial structure and valence band offsets of the La{sub 2}Hf{sub 2}O{sub 7}/Si(001) crystalline system were studied. The SrTiO{sub 3}/GaAs(001) crystalline interfaces with unpinned Fermi level were investigated. (orig.)

  18. Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

    International Nuclear Information System (INIS)

    Tong, S.W.; Lau, K.M.; Sun, H.Y.; Fung, M.K.; Lee, C.S.; Lifshitz, Y.; Lee, S.T.

    2006-01-01

    It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CF x ) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CF x /HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CF x /NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CF x /NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CF x -coated ITO contact are consistent with its smallest barrier height

  19. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    International Nuclear Information System (INIS)

    Wadati, H.; Fujimori, A.

    2013-01-01

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

  20. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  1. CO oxidation on PtSn nanoparticle catalysts occurs at the interface of Pt and Sn oxide domains formed under reaction conditions

    KAUST Repository

    Michalak, William D.

    2014-04-01

    The barrier to CO oxidation on Pt catalysts is the strongly bound adsorbed CO, which inhibits O2 adsorption and hinders CO2 formation. Using reaction studies and in situ X-ray spectroscopy with colloidally prepared, monodisperse ∼2 nm Pt and PtSn nanoparticle catalysts, we show that the addition of Sn to Pt provides distinctly different reaction sites and a more efficient reaction mechanism for CO oxidation compared to pure Pt catalysts. To probe the influence of Sn, we intentionally poisoned the Pt component of the nanoparticle catalysts using a CO-rich atmosphere. With a reaction environment comprised of 100 Torr CO and 40 Torr O2 and a temperature range between 200 and 300 C, Pt and PtSn catalysts exhibited activation barriers for CO2 formation of 133 kJ/mol and 35 kJ/mol, respectively. While pure Sn is readily oxidized and is not active for CO oxidation, the addition of Sn to Pt provides an active site for O2 adsorption that is important when Pt is covered with CO. Sn oxide was identified as the active Sn species under reaction conditions by in situ ambient pressure X-ray photoelectron spectroscopy measurements. While chemical signatures of Pt and Sn indicated intermixed metallic components under reducing conditions, Pt and Sn were found to reversibly separate into isolated domains of Pt and oxidic Sn on the nanoparticle surface under reaction conditions of 100 mTorr CO and 40 mTorr O2 between temperatures of 200-275 C. Under these conditions, PtSn catalysts exhibited apparent reaction orders in O2 for CO 2 production that were 0.5 and lower with increasing partial pressures. These reaction orders contrast the first-order dependence in O 2 known for pure Pt. The differences in activation barriers, non-first-order dependence in O2, and the presence of a partially oxidized Sn indicate that the enhanced activity is due to a reaction mechanism that occurs at a Pt/Sn oxide interface present at the nanoparticle surface. © 2014 Published by Elsevier Inc.

  2. Investigation on the Interface Characteristics of the Thermal Barrier Coating System through Flat Cylindrical Indenters

    Directory of Open Access Journals (Sweden)

    Shifeng Wen

    2014-01-01

    Full Text Available Thermal barrier coating (TBC systems are highly advanced material systems and usually applied to insulate components from large and prolonged heat loads by utilizing thermally insulating materials. In this study, the characteristics of the interface of thermal barrier coating systems have been simulated by the finite-element method (FEM. The emphasis was put on the stress distribution at the interface which is beneath the indenter. The effect of the interface roughness, the thermally grown oxide (TGO layer's thickness, and the modulus ratio (η of the thin film with the substrate has been considered. Finite-element results showed that the influences of the interface roughness and the TGO layer's thickness on stress distribution were important. At the same time, the residual stress distribution has been investigated in detail.

  3. Molecular dewetting on insulators

    International Nuclear Information System (INIS)

    Burke, S A; Topple, J M; Gruetter, P

    2009-01-01

    Recent attention given to the growth and morphology of organic thin films with regard to organic electronics has led to the observation of dewetting (a transition from layer(s) to islands) of molecular deposits in many of these systems. Dewetting is a much studied phenomenon in the formation of polymer and liquid films, but its observation in thin films of the 'small' molecules typical of organic electronics requires additional consideration of the structure of the interface between the molecular film and the substrate. This review covers some key concepts related to dewetting and molecular film growth. In particular, the origins of different growth modes and the thickness dependent interactions which give rise to dewetting are discussed in terms of surface energies and the disjoining pressure. Characteristics of molecular systems which may lead to these conditions, including the formation of metastable interface structures and commensurate-incommensurate phase transitions, are also discussed. Brief descriptions of some experimental techniques which have been used to study molecular dewetting are given as well. Examples of molecule-on-insulator systems which undergo dewetting are described in some detail, specifically perylene derivatives on alkali halides, C 60 on alkali halides, and the technologically important system of pentacene on SiO 2 . These examples point to some possible predicting factors for the occurrence of dewetting, most importantly the formation of an interface layer which differs from the bulk crystal structure. (topical review)

  4. Molecular dewetting on insulators.

    Science.gov (United States)

    Burke, S A; Topple, J M; Grütter, P

    2009-10-21

    Recent attention given to the growth and morphology of organic thin films with regard to organic electronics has led to the observation of dewetting (a transition from layer(s) to islands) of molecular deposits in many of these systems. Dewetting is a much studied phenomenon in the formation of polymer and liquid films, but its observation in thin films of the 'small' molecules typical of organic electronics requires additional consideration of the structure of the interface between the molecular film and the substrate. This review covers some key concepts related to dewetting and molecular film growth. In particular, the origins of different growth modes and the thickness dependent interactions which give rise to dewetting are discussed in terms of surface energies and the disjoining pressure. Characteristics of molecular systems which may lead to these conditions, including the formation of metastable interface structures and commensurate-incommensurate phase transitions, are also discussed. Brief descriptions of some experimental techniques which have been used to study molecular dewetting are given as well. Examples of molecule-on-insulator systems which undergo dewetting are described in some detail, specifically perylene derivatives on alkali halides, C(60) on alkali halides, and the technologically important system of pentacene on SiO(2). These examples point to some possible predicting factors for the occurrence of dewetting, most importantly the formation of an interface layer which differs from the bulk crystal structure.

  5. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco

    2015-02-11

    We investigate the prototypical hybrid interface formed between PTCDA and conductive n-doped ZnO films by means of complementary optical and electronic spectroscopic techniques. We demonstrate that shallow donors in the vicinity of the ZnO surface cause an integer charge transfer to PTCDA, which is clearly restricted to the first monolayer. By means of DFT calculations, we show that the experimental signatures of the anionic PTCDA species can be understood in terms of strong hybridization with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron-transport level but requires rather an atomistic understanding of the interfacial interactions. The study reveals that defect sites and dopants can have a significant influence on the specifics of interfacial coupling and thus on carrier injection or extraction.

  6. The Rashba spin-orbit coupling for superconductivity in oxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Beyl, Stefan; Orth, Peter P.; Schmalian, Joerg [Institut fuer Theorie der Kondensierten Materie, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2014-07-01

    We investigate the role of the Rashba spin-orbit coupling on the superconducting order parameter and the phase stiffness at the interface of LaAlO{sub 3} and SrTiO{sub 3}. In particular, we analyze the gate controlled crossover between BCS superconductivity and Bose-Einstein condensation of Cooper pairs, amplified by the Rashba coupling and the possibility of a phase fluctuation induced quantum critical point.

  7. Traveling interface modulations and anisotropic front propagation in ammonia oxidation over Rh(110)

    Energy Technology Data Exchange (ETDEWEB)

    Rafti, Matías [Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA), Fac. Cs. Exactas, Universidad Nacional de La Plata, 64 y Diag. 113 (1900), La Plata (Argentina); Institut für Physikalische Chemie und Elektrochemie, Leibniz-Universität Hannover, Callinstr. 3-3a, D-30167 Hannover (Germany); Borkenhagen, Benjamin; Lilienkamp, Gerhard [Institut für Energieforschung und Physikalische Technologien, Technische Universität Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld (Germany); Lovis, Florian; Smolinsky, Tim; Imbihl, Ronald, E-mail: imbihl@pci.uni-hannvover.de [Institut für Physikalische Chemie und Elektrochemie, Leibniz-Universität Hannover, Callinstr. 3-3a, D-30167 Hannover (Germany)

    2015-11-14

    The bistable NH{sub 3} + O{sub 2} reaction over a Rh(110) surface was explored in the pressure range 10{sup −6}–10{sup −3} mbar and in the temperature range 300–900 K using photoemission electron microscopy and low energy electron microscopy as spatially resolving methods. We observed a history dependent anisotropy in front propagation, traveling interface modulations, transitions with secondary reaction fronts, and stationary island structures.

  8. Hydrogen traps in the oxide/alloy interface region of Zr-Nb alloys

    International Nuclear Information System (INIS)

    Khatamian, D.

    1995-03-01

    In this study the 1 H( 15 N,αγ) 12 C nuclear reaction has been used to measure hydrogen profiles of anodically oxidized Zr-Nb specimens containing various amounts of niobium. The profiles have been correlated with oxygen profiles, obtained using a Scanning Auger Microprobe (SAM), and with X-ray diffraction patterns. In addition, unoxidized Zr-2.5Nb (Zr-2.5 wt% Nb) samples were implanted with oxygen and hydrogen to study the interaction between these two species when dissolved in the alloy. All the anodically oxidized specimens, except the pure Zr and the single-phase β-Zr (Zr-20Nb) samples, displayed hydrogen peaks beneath the oxide layer. These results, in conjunction with the results from the implanted specimens, indicate that the hydrogen moves under the influence of a stress gradient to the sub-oxide region, where the metal lattice has been expanded due to superficial oxide growth. The results show that dissolved oxygen sites in Zr-2.5Nb alloy do not trap hydrogen. (author). 16 refs., 6 figs

  9. The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

    International Nuclear Information System (INIS)

    Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

    2011-01-01

    In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

  10. Study of interface properties in LaAlO{sub 3}/SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, Stefan Patrick

    2009-02-19

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  11. Enhanced electrocatalytic activity of reduced graphene oxide-Os nanoparticle hybrid films obtained at a liquid/liquid interface

    Science.gov (United States)

    Bramhaiah, K.; Pandey, Indu; Singh, Vidya N.; Kavitha, C.; John, Neena S.

    2018-03-01

    Hybrid films of reduced graphene oxide-osmium nanoparticles (rGO-Os NPs) synthesized at a liquid/liquid interface are explored for their electrocatalytic activity towards the oxidation of rhodamine B (RhB), a popular colourant found in textile industry effluents and a non-permitted food colour. The free-standing nature of the films enables them to be lifted directly on to electrodes without the aid of any binders. The films consist of aggregates of ultra-small Os NPs interspersed with rGO layers. The hybrid film exhibits enhanced RhB oxidation when compared to its constituents arising from the synergic effect between rGO and Os NPs, Os contributing to electrocatalysis and rGO contributing to high surface area and conductance as well as stabilization of Os nanoparticles. The electrochemical sensor based on rGO-Os NP hybrid film on pencil graphite electrode shows a remarkable performance for the quantitative detection of RhB with a linear variation in a wide range of concentrations, 4-1300 ppb (8.3 nM-2.71 μM). The modified electrode presents good stability over more than 6 months, reproducibility and anti-interference capability. The use of developed sensor for adequate detection of RhB in real samples such as food samples and pen markers is also demonstrated.

  12. Interface-modulated approach toward multilevel metal oxide nanotubes for lithium-ion batteries and oxygen reduction reaction

    Institute of Scientific and Technical Information of China (English)

    Jiashen Meng; Chaojiang Niu; Xiong Liu; Ziang Liu; Hongliang Chen; Xuanpeng Wang; Jiantao Li

    2016-01-01

    Metal oxide hollow structures with multilevel interiors are of great interest for potential applications such as catalysis,chemical sensing,drug delivery,and energy storage.However,the controlled synthesis of multilevel nanotubes remains a great challenge.Here we develop a facile interface-modulated approach toward the synthesis of complex metal oxide multilevel nanotubes with tunable interior structures through electrospinning followed by controlled heat treatment.This versatile strategy can be effectively applied to fabricate wire-in-tube and tubein-tube nanotubes of various metal oxides.These multilevel nanotubes possess a large specific surface area,fast mass transport,good strain accommodation,and high packing density,which are advantageous for lithium-ion batteries (LIBs)and the oxygen reduction reaction (ORR).Specifically,shrinkable CoMn2O4 tube-in-tube nanotubes as a lithium-ion battery anode deliver a high discharge capacity of ~565 mAh.g-1 at a high rate of 2 A.g-1,maintaining 89% of the latter after 500 cycles.Further,as an oxygen reduction reaction catalyst,these nanotubes also exhibit excellent stability with about 92% current retention after 30,000 s,which is higher than that of commercial Pt/C (81%).Therefore,this feasible method may push the rapid development of one-dimensional (1D) nanomaterials.These multifunctional nanotubes have great potential in many frontier fields.

  13. High-performance insulator structures for accelerator applications

    International Nuclear Information System (INIS)

    Sampayan, S.E.; Caporaso, G.J.; Sanders, D.M.; Stoddard, R.D.; Trimble, D.O.; Elizondo, J.; Krogh, M.L.; Wieskamp, T.F.

    1997-05-01

    A new, high gradient insulator technology has been developed for accelerator systems. The concept involves the use of alternating layers of conductors and insulators with periods of order 1 mm or less. These structures perform many times better (about 1.5 to 4 times higher breakdown electric field) than conventional insulators in long pulse, short pulse, and alternating polarity applications. We describe our ongoing studies investigating the degradation of the breakdown electric field resulting from alternate fabrication techniques, the effect of gas pressure, the effect of the insulator-to-electrode interface gap spacing, and the performance of the insulator structure under bi-polar stress

  14. Characterization of the oleic acid/iron oxide nanoparticle interface by magnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Masur, S., E-mail: sabrina.masur@uni-due.de; Zingsem, B.; Marzi, T.; Meckenstock, R.; Farle, M.

    2016-10-01

    The synthesis of colloidal nanoparticles involves surfactant molecules, which bind to the particle surface and stabilize nanoparticles against aggregation. In many cases these protecting shells also can be used for further functionalization. In this study, we investigated monodisperse single crystalline iron oxide core/shell nanoparticles (Fe{sub x}O{sub y}-NPs) in situ covered with an oleic acid layer which showed two electron spin resonance (ESR) signals. The nanoparticles with the ligands attached were characterized by transmission electron microscopy (TEM) and ferro- and paramagnetic resonance (FMR, EPR). Infrared spectroscopy confirmed the presence of the functional groups and revealed that the oleic acid (OA) is chemisorbed as a carboxylate on the iron oxide and is coordinated symmetrically to the oxide atoms. We show that the EPR signal of the OA ligand molecule can be used as a local probe to determine the temperature changes at the surface of the nanoparticle. - Highlights: • Monodisperse single crystalline iron oxide core/shell nanoparticles (Fe{sub x}O{sub y}-NPs) in situ covered with an oleic acid layer two electron spin resonance (ESR) signals. • We show that the EPR signal of the OA ligand molecule can be used as a local probe to determine the temperature changes at the surface of the nanoparticle.

  15. Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

    International Nuclear Information System (INIS)

    Lim, Dong-Gun; Kwak, Dong-Joo; Yi Junsin

    2002-01-01

    In this paper, we report upon an investigation into the feasibility of Y 2 O 3 films as buffer layers for metal ferroelectric insulator semiconductor type capacitors. Buffer layers were prepared by a two-step process of low temperature film growth using the RF reactive magnetron sputtering method and subsequent rapid thermal annealing. By applying an yttrium metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. Increasing the post-annealing temperature above 700 deg. C reduced the surface roughness of the Y 2 O 3 films, and increasing the O 2 partial pressure from 10 to 20% increased the surface roughness from 4.0 to 15.1 nm. The Y 2 O 3 films, prepared using an O 2 partial pressure of 20% and annealed at 900 deg. C, exhibited the best surface roughness characteristics of the samples studied. For a substrate temperature above 400 deg. C and an O 2 partial pressure of 20%, we observed that a cubic Y 2 O 3 phase dominated the X-ray diffraction spectra. The lowest lattice mismatch achieved between the Y 2 O 3 film and the Si substrate was 1.75%. By using a two-step process, we reduced the leakage current density of Y 2 O 3 films by two orders of magnitude and the D it to as low as 8.72x10 10 cm -2 eV -1 . A Y 2 O 3 buffer layer grown at 400 deg. C in a 20% O 2 partial pressure and rapidly annealed at 900 deg. C in an oxygen enviroment exhibited the best overall properties for a single transistor ferroelectric random access memory

  16. Molecular control of photoexcited charge transfer and recombination at a quaterthiophene/zinc oxide interface

    International Nuclear Information System (INIS)

    Mou Weiwei; Nakano, Aiichiro; Ohmura, Satoshi; Shimojo, Fuyuki

    2012-01-01

    Nonadiabatic quantum molecular dynamics simulations are performed to study photoexcited charge transfer (CT) and charge recombination (CR) at an interface between a conjugated oligomer donor, quaterthiophene (QT), and an inorganic acceptor (ZnO). Simulations reveal a detrimental effect of static disorder in QT conformation on the efficiency of hybrid QT/ZnO solar cells due to increased CR. On the contrary, dynamic disorder (i.e., fluctuation of carbon-hydrogen bonds in QT) is essential for high efficiency by assisting CT. The separate controllability of CT and CR at the molecular level has impacts on molecular design for efficient solar cells and explains recent experimental observations.

  17. Characterisation of the Ni/ScYSZ interface in a model solid oxide fuel cell anode

    DEFF Research Database (Denmark)

    Schmidt, Michael Stenbæk; Hansen, Karin Vels; Norrman, Kion

    2008-01-01

    A nickel point electrode setup was used as a model of an SOFC anode on three slightly different electrolytes of zirconia stabilised by co-doping with scandia and yttria. The effect of electrolyte impurities on the electrode polarisation resistance was investigated by correlating electrochemical...... impedance spectroscopy data with time-of-flight secondary ion mass spectrometry, scanning electron microscopy and atomic force microscopy data. A semi-quantitative analysis of the electrolyte surfaces showed that the levels of surface impurities inside the electrode/electrolyte interface in close proximity...

  18. Detection of different oxidation states of individual manganese porphyrins during their reaction with oxygen at a solid/liquid interface.

    Science.gov (United States)

    den Boer, Duncan; Li, Min; Habets, Thomas; Iavicoli, Patrizia; Rowan, Alan E; Nolte, Roeland J M; Speller, Sylvia; Amabilino, David B; De Feyter, Steven; Elemans, Johannes A A W

    2013-07-01

    Manganese porphyrins have been extensively investigated as model systems for the natural enzyme cytochrome P450 and as synthetic oxidation catalysts. Here, we report single-molecule studies of the multistep reaction of manganese porphyrins with molecular oxygen at a solid/liquid interface, using a scanning tunnelling microscope (STM) under environmental control. The high lateral resolution of the STM, in combination with its sensitivity to subtle differences in the electronic properties of molecules, allowed the detection of at least four distinct reaction species. Real-space and real-time imaging of reaction dynamics enabled the observation of active sites, immobile on the experimental timescale. Conversions between the different species could be tuned by the composition of the atmosphere (argon, air or oxygen) and the surface bias voltage. By means of extensive comparison of the results to those obtained by analogous solution-based chemistry, we assigned the observed species to the starting compound, reaction intermediates and products.

  19. Total dose hardening of buried insulator in implanted silicon-on-insulator structures

    International Nuclear Information System (INIS)

    Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

    1987-01-01

    Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

  20. High Performance Nano-Crystalline Oxide Fuel Cell Materials. Defects, Structures, Interfaces, Transport, and Electrochemistry

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, Scott [Northwestern Univ., Evanston, IL (United States); Poeppelmeier, Ken [Northwestern Univ., Evanston, IL (United States); Mason, Tom [Northwestern Univ., Evanston, IL (United States); Marks, Lawrence [Northwestern Univ., Evanston, IL (United States); Voorhees, Peter [Northwestern Univ., Evanston, IL (United States)

    2016-09-07

    This project addresses fundamental materials challenges in solid oxide electrochemical cells, devices that have a broad range of important energy applications. Although nano-scale mixed ionically and electronically conducting (MIEC) materials provide an important opportunity to improve performance and reduce device operating temperature, durability issues threaten to limit their utility and have remained largely unexplored. Our work has focused on both (1) understanding the fundamental processes related to oxygen transport and surface-vapor reactions in nano-scale MIEC materials, and (2) determining and understanding the key factors that control their long-term stability. Furthermore, materials stability has been explored under the “extreme” conditions encountered in many solid oxide cell applications, i.e, very high or very low effective oxygen pressures, and high current density.

  1. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong, E-mail: hhong@aps.anl.gov [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Chang, S.-H.; Bhattacharya, A.; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2016-01-15

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  2. Nitrate Ion Photochemistry at Interfaces: A New Mechanism for Oxidation of alpha-Pinene

    International Nuclear Information System (INIS)

    Yu, Yong; Ezell, Michael J.; Zelenyuk, Alla N.; Imre, Dan G.; Alexander, M. Lizabeth; Ortega, John V.; Thomas, Jennie L.; Gogna, Karun; Tobias, Douglas J.; D'Anna, Barbara; Harmon, Chris W.; Johnson, Stan; Finlayson-Pitts, Barbara J.

    2008-01-01

    The photooxidation of 0.6-0.9 ppm α-pinene in the presence of a deliquesced thin film of NaNO3, and for comparison increasing concentrations of NO2, was studied in a 100 L Teflon(reg s ign) chamber at relative humidities from 70-88% and temperatures from 296-304 K. The loss of α-pinene and the formation of gaseous products were followed with time using proton transfer mass spectrometry. The yields of gas phase products were smaller in the NaNO3 experiments than in NO2 experiments. In addition, pinonic acid, pinic acid, trans-sobrerol and other unidentified products were detected in the extracts of the wall washings only for the NaNO3 photolysis. These data indicate enhanced loss of α-pinene at the NaNO3 thin film during photolysis. Supporting the experimental results are molecular dynamics simulations which predict that α-pinene has an affinity for the surface of the deliquesced nitrate thin film, enhancing the opportunity for oxidation of the impinging organic gas during the nitrate photolysis. This new mechanism of oxidation of organics may be partially responsible for the correlation between nitrate and the organic component of particles observed in many field studies, and may also contribute to the missing source of SOA needed to reconcile model predictions and field measurements. In addition, photolysis of nitrate on surfaces in the boundary layer may lead to oxidation of co-adsorbed organics

  3. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong; Tung, I. C.; Chang, S.-H.; Bhattacharya, A.; Fong, D. D.

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques

  4. Interface polymerization synthesis of conductive polymer/graphite oxide@sulfur composites for high-rate lithium-sulfur batteries

    International Nuclear Information System (INIS)

    Wang, Xiwen; Zhang, Zhian; Yan, Xiaolin; Qu, Yaohui; Lai, Yanqing; Li, Jie

    2015-01-01

    Highlights: • A hybrid nanostructure that incorporate the merits of conductive polymer nanorods and graphite oxide sheets. • A novel approach based on interface polymerization for synthesizing CP/GO@S ternary composite. • CP/GO@S ternary composite cathode shows enhanced electrochemical properties compared with CP@S binary composite cathode. • PEDOT/GO@S composite is the material system that have best electrochemical performance in all CP/GO@S ternary composites. - Abstract: The novel ternary composites, conductive polymers (CPs)/graphene oxide (GO)@sulfur composites were successfully synthesized via a facile one-pot route and used as cathode materials for Li-S batteries The poly(3,4-ethylenedioxythiophene) (PEDOT)/GO and polyaniline (PANI)/GO composites were prepared by interface polymerization of monomers on the surface of GO sheets. Then sulfur was in-situ deposited on the CPs/GO composites in same solution. The component and structure of the composites were characterized by XPS, TGA, FTIR, SEM, TEM and electrochemical measurements. In this structure, the CPs nanostructures are believed to serve as a conductive matrix and an adsorbing agent, while the highly conductive GO will physically and chemically confine the sulfur and polysulfide within cathode. The PEDOT/GO@S composites with the sulfur content of 66.2 wt% exhibit a reversible discharge capacity of 800.2 mAh g −1 after 200 cycles at 0.5 C, which is much higher than that of PANI/GO@S composites (599.1 mAh g −1 ) and PANI@S (407.2 mAh g −1 ). Even at a high rate of 4 C, the PEDOT/GO@S composites still retain a high specific capacity of 632.4 mAh g −1

  5. Effects of grain boundaries at the electrolyte/cathode interfaces on oxygen reduction reaction kinetics of solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min Gi; Koo, Ja Yang; Ahn, Min Woo; Lee, Won Young [Dept. of Mechanical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of)

    2017-04-15

    We systematically investigated the effects of grain boundaries (GBs) at the electrolyte/cathode interface of two conventional electrolyte materials, i.e., yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC). We deposited additional layers by pulsed laser deposition to control the GB density on top of the polycrystalline substrates, obtaining significant improvements in peak power density (two-fold for YSZ and three-fold for GDC). The enhanced performance at high GB density in the additional layer could be ascribed to the accumulation of oxygen vacancies, which are known to be more active sites for oxygen reduction reactions (ORR) than grain cores. GDC exhibited a higher enhancement than YSZ, due to the easier formation, and thus higher concentration, of oxygen vacancies for ORR. The strong relation between the concentration of oxygen vacancies and the surface exchange characteristics substantiated the role of GBs at electrolyte/cathode interfaces on ORR kinetics, providing new design parameters for highly performing solid oxide fuel cells.

  6. Nighttime oxidation of surfactants at the air-water interface: effects of chain length, head group and saturation

    Science.gov (United States)

    Sebastiani, Federica; Campbell, Richard A.; Rastogi, Kunal; Pfrang, Christian

    2018-03-01

    Reactions of the key atmospheric nighttime oxidant NO3 with organic monolayers at the air-water interface are used as proxies for the ageing of organic-coated aqueous aerosols. The surfactant molecules chosen for this study are oleic acid (OA), palmitoleic acid (POA), methyl oleate (MO) and stearic acid (SA) to investigate the effects of chain length, head group and degree of unsaturation on the reaction kinetics and products formed. Fully and partially deuterated surfactants were studied using neutron reflectometry (NR) to determine the reaction kinetics of organic monolayers with NO3 at the air-water interface for the first time. Kinetic modelling allowed us to determine the rate coefficients for the oxidation of OA, POA and MO monolayers to be (2.8±0.7) × 10-8, (2.4±0.5) × 10-8and (3.3±0.6) × 10-8 cm2 molecule-1 s-1 for fitted initial desorption lifetimes of NO3 at the closely packed organic monolayers, τd, NO3, 1, of 8.1±4.0, 16±4.0 and 8.1±3.0 ns, respectively. The approximately doubled desorption lifetime found in the best fit for POA compared to OA and MO is consistent with a more accessible double bond associated with the shorter alkyl chain of POA facilitating initial NO3 attack at the double bond in a closely packed monolayer. The corresponding uptake coefficients for OA, POA and MO were found to be (2.1±0.5) × 10-3, (1.7±0.3) × 10-3 and (2.1±0.4) × 10-3, respectively. For the much slower NO3-initiated oxidation of the saturated surfactant SA we estimated a loss rate of approximately (5±1) × 10-12 cm2 molecule-1 s-1, which we consider to be an upper limit for the reactive loss, and estimated an uptake coefficient of ca. (5±1) × 10-7. Our investigations demonstrate that NO3 will contribute substantially to the processing of unsaturated surfactants at the air-water interface during nighttime given its reactivity is ca. 2 orders of magnitude higher than that of O3. Furthermore, the relative contributions of NO3 and O3 to the oxidative

  7. Nighttime oxidation of surfactants at the air–water interface: effects of chain length, head group and saturation

    Directory of Open Access Journals (Sweden)

    F. Sebastiani

    2018-03-01

    Full Text Available Reactions of the key atmospheric nighttime oxidant NO3 with organic monolayers at the air–water interface are used as proxies for the ageing of organic-coated aqueous aerosols. The surfactant molecules chosen for this study are oleic acid (OA, palmitoleic acid (POA, methyl oleate (MO and stearic acid (SA to investigate the effects of chain length, head group and degree of unsaturation on the reaction kinetics and products formed. Fully and partially deuterated surfactants were studied using neutron reflectometry (NR to determine the reaction kinetics of organic monolayers with NO3 at the air–water interface for the first time. Kinetic modelling allowed us to determine the rate coefficients for the oxidation of OA, POA and MO monolayers to be (2.8±0.7 × 10−8, (2.4±0.5 × 10−8and (3.3±0.6 × 10−8 cm2 molecule−1 s−1 for fitted initial desorption lifetimes of NO3 at the closely packed organic monolayers, τd, NO3, 1, of 8.1±4.0, 16±4.0 and 8.1±3.0 ns, respectively. The approximately doubled desorption lifetime found in the best fit for POA compared to OA and MO is consistent with a more accessible double bond associated with the shorter alkyl chain of POA facilitating initial NO3 attack at the double bond in a closely packed monolayer. The corresponding uptake coefficients for OA, POA and MO were found to be (2.1±0.5 × 10−3, (1.7±0.3 × 10−3 and (2.1±0.4 × 10−3, respectively. For the much slower NO3-initiated oxidation of the saturated surfactant SA we estimated a loss rate of approximately (5±1 × 10−12 cm2 molecule−1 s−1, which we consider to be an upper limit for the reactive loss, and estimated an uptake coefficient of ca. (5±1 × 10−7. Our investigations demonstrate that NO3 will contribute substantially to the processing of unsaturated surfactants at the air–water interface during nighttime given its reactivity is ca. 2 orders of magnitude higher

  8. Infiltration and Selective Interactions at the Interface in Polymer-Oxide Hybrid Solar Cells

    Science.gov (United States)

    Ferragut, R.; Aghion, S.; Moia, F.; Binda, M.; Canesi, E. V.; Lanzani, G.; Petrozza, A.

    2013-06-01

    Positron annihilation spectroscopy was used to characterize polymer-based hybrid solar cells formed by poly(3-hexylthiophene) (P3HT) finely infiltrated in a porous TiO2 skeleton. A step-change improvement in the device performance is enabled by engineering the hybrid interface by the insertion of a proper molecular interlayer namely 4-mercaptopyridine (4-MP). In order to obtain depth-resolved data, positrons were implanted in the sample using a variable-energy positron beam. The characteristics of the partially filled nanoporous structures were evaluated in terms of the depth profile of the positronium yield and the S-parameter. A quantitative evaluation of the pore filling in the deep region is given from the analysis of Coincidence Doppler Broadening taken at fixed implantation energy. We note a remarkable difference in terms of the positronium yield when the 4-MP interlayer is introduced, which means a better covering of P3HT on the porous surface.

  9. Charge and field coupling phenomena at metal-oxide interfaces and their applications

    Science.gov (United States)

    Voora, Venkata M.

    Heterostructures composed of polar materials, such as ferroelectric and/or piezoelectric, are interesting due to their interface lattice charge coupling (LCC) effects. In this thesis, coupling effects between switchable ferroelectric and non-switchable piezoelectric semiconductor spontaneous polarizations are addressed. Also discussed is a dielectric continuum model approach for studying LCC effects in double layer piezoelectric semiconductor-ferroelectric and triple layer piezoelectric semiconductor-ferroelectric-piezoelectric semiconductor heterostructures. The dielectric continuum model augments the effects of electric field driven switchable polarization due to LCC with depletion layer formation in semiconductor heterostructures. Electrical investigations were used to study a reference single layer (BaTiO3), a double layer (BaTiO3-ZnO), and a triple layer (ZnO-BaTiO 3-ZnO) heterostructure grown by pulsed laser deposition. The coupling between the non-switchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO layer within double and triple layered heterostructures reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BaTiO 3 interfaces. Model analysis show very good agreement between the generated data and the experimental results. The dielectric continuum model approach allows for the derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents, and can be generalized towards multiple layer piezoelectric semiconductor-ferroelectric heterostructures. Based on experimental results the polarization coupled ZnO-BaTiO 3-ZnO heterostructures is identified as a two-terminal unipolar ferroelectric bi-junction transistor which can be utilized in memory storage devices. Furthermore it is discussed, that the triple layer heterostructure with magnetically

  10. The Study of the Oxide Coating Effect on Bone-Implant Interface Formation by Means of Electron Microscopy Method with Energy Dispersive X-ray Analysis

    International Nuclear Information System (INIS)

    Gudakova, A.A.; Danilchenko, S.N.; Sukhodub, L.F.; Luk'yanchenko, V.V.; Zykova, A.V.; Safonov, V.I.

    2006-01-01

    The experimental results of the measurement of the tissue constituent elements distribution, as well as impurity elements in the tissues around a Ti-implant with protective TiO 2 oxide coating are presented. Study of morphology, qualitative and quantitative analysis were carried out by means of scanning electron microscopy method with energy dispersive X-ray analysis. The results show weak migration of Ti into the bone tissue near the interface and protective role of the oxide coatings

  11. Origin of Colossal Ionic Conductivity in Oxide Multilayers: Interface Induced Sublattice Disorder

    International Nuclear Information System (INIS)

    Pennycook, Timothy J.; Pantelides, Sokrates T.; Beck, Matthew J.; Varga, Kalman; Varela, Maria; Pennycook, Stephen J.

    2010-01-01

    Oxide ionic conductors typically operate at high temperatures, which limits their usefulness. Colossal room-temperature ionic conductivity was recently discovered in multilayers of yttria-stabilized zirconia (YSZ) and SrTiO 3 . Here we report density-functional calculations that trace the origin of the effect to a combination of lattice-mismatch strain and O-sublattice incompatibility. Strain alone in bulk YSZ enhances O mobility at high temperatures by inducing extreme O disorder. In multilayer structures, O-sublattice incompatibility causes the same extreme disorder at room temperature.

  12. Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy

    Science.gov (United States)

    Hess, P.; Patzner, P.; Osipov, A. V.; Hu, Z. G.; Lingenfelser, D.; Prunici, P.; Schmohl, A.

    2006-08-01

    VUV-laser-induced oxidation of Si(111)-(1×1):H, Si(100):H, and a-Si:H at 157 nm (F II laser) in pure O II and pure H IIO atmospheres was studied between 30°C and 250°C. The oxidation process was monitored in real time by spectroscopic ellipsometry (NIR-UV) and FTIR spectroscopy. The ellipsometric measurements could be simulated with a three-layer model, providing detailed information on the variation of the suboxide interface with the nature of the silicon substrate surface. Besides the silicon-dioxide and suboxide layer, a dense, disordered, roughly monolayer thick silicon layer was included, as found previously by molecular dynamics calculations. The deviations from the classical Deal-Grove mechanism and the self-limited growth of the ultrathin dioxide layers (TMS) groups and n-alkylthiol monolayers on gold-coated silicon. The C-H stretching vibrations of the methylene and methyl groups could be identified by FTIR spectroscopy and IR ellipsometry.

  13. Electronic structure evolution and energy level alignment at C60/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

    Science.gov (United States)

    Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli

    2014-04-01

    The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the electron transfer from TAPC to C60. This led to a drop of the HOMO of TAPC near the C60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C60, similarly creating a built-in field in C60 film and improving the electron transfer away from the C60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C60/TAPC-based organic photovoltaic cells.

  14. Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

    DEFF Research Database (Denmark)

    Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

    2018-01-01

    A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

  15. Oxidation of monolayers of partly converted dimethoxy-substituted poly(p-phenylenevinylene) precursor polymers at the air-water interface

    NARCIS (Netherlands)

    Hagting, J.G.; Schouten, A.J.; Hagting, A

    2000-01-01

    We observed that the poly(p-phenylenevinylene) units in Langmuir monolayers of partly converted dimethoxy-substituted poly(p-phenylenevinylene) precursor polymers oxidize at the air-water interface. This reaction even happened in the dark and therefore can not be attributed to a photooxygenation

  16. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-01

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  17. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations.

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-06

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  18. Formation of an interface layer in thermionic oxide cathodes for CRT applications

    International Nuclear Information System (INIS)

    Hashim, A A; Barratt, D S; Ray, A K; Hassan, A K

    2004-01-01

    Scanning electron microscopic techniques were employed to study the surface morphological changes of oxide cathodes and nickel caps as a result of cathode activation extending over periods of 1-12 h. Elemental analysis of barium, strontium, tungsten, magnesium and aluminium was performed using energy dispersion x-ray spectroscopy. An abrupt change was observed after activation longer than 3 h. Conduction through well activated cathode assemblies was found to be due to intergranular electron tunnelling at low temperatures (T ≤ 500 K), while trapping and detrapping at grain boundaries becomes the dominant mechanism at high temperatures (T ≥ 500 K). The contribution of the interfacial layer to conductivity was found to be significant for cathodes activated for smaller periods

  19. Rapid dehalogenation of pesticides and organics at the interface of reduced graphene oxide-silver nanocomposite.

    Science.gov (United States)

    Koushik, Dibyashree; Sen Gupta, Soujit; Maliyekkal, Shihabudheen M; Pradeep, T

    2016-05-05

    This paper reports dehalogenation of various organohalides, especially aliphatic halocarbons and pesticides at reduced graphene oxide-silver nanocomposite (RGO@Ag). Several pesticides as well as chlorinated and fluorinated alkyl halides were chosen for this purpose. The composite and the products of degradation were characterized thoroughly by means of various microscopic and spectroscopic techniques. A sequential two-step mechanism involving dehalogenation of the target pollutants by silver nanoparticles followed by adsorption of the degraded compounds onto RGO was revealed. The composite showed unusual adsorption capacity, as high as 1534 mg/g, which facilitated the complete removal of the pollutants. Irrespective of the pollutants tested, a pseudo-second-order rate equation best described the adsorption kinetics. The affinity of the composite manifested chemical differences. The high adsorption capacity and re-usability makes the composite an excellent substrate for purification of water. Copyright © 2016 Elsevier B.V. All rights reserved.

  20. Proximity effects in topological insulator heterostructures

    International Nuclear Information System (INIS)

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  1. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio

    2017-08-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  2. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  3. Surface Passivation of CIGS Solar Cells Using Gallium Oxide

    KAUST Repository

    Garud, Siddhartha

    2018-02-27

    This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

  4. Characterization of the interface between an Fe–Cr alloy and the p-type thermoelectric oxide Ca3Co4O9

    DEFF Research Database (Denmark)

    Holgate, Tim; Han, Li; Wu, NingYu

    2014-01-01

    A customized Fe–Cr alloy that has been optimized for high temperature applications in oxidizing atmospheres has been interfaced via spark plasma sintering (SPS) with a p-type thermoelectric oxide material: calcium cobaltate (Ca3Co4O9). The properties of the alloy have been analyzed for its...... calcium and chromium in the interface that is highly resistive at room temperature, but conducting at the intended thermoelectric device hot-side operating temperature of 800 °C. As the alloy is well matched in terms of its thermal expansion and highly conducting compared to the Ca3Co4O9, it may...... be further considered as an interconnect material candidate at least with application on the hot-side of an oxide thermoelectric power generation module....

  5. Economically optimal thermal insulation

    Energy Technology Data Exchange (ETDEWEB)

    Berber, J.

    1978-10-01

    Exemplary calculations to show that exact adherence to the demands of the thermal insulation ordinance does not lead to an optimal solution with regard to economics. This is independent of the mode of financing. Optimal thermal insulation exceeds the values given in the thermal insulation ordinance.

  6. Degradation of cellulose at the wet-dry interface. II. Study of oxidation reactions and effect of antioxidants.

    Science.gov (United States)

    Jeong, Myung-Joon; Dupont, Anne-Laurence; de la Rie, E René

    2014-01-30

    To better understand the degradation of cellulose upon the formation of a tideline at the wet-dry interface when paper is suspended in water, the production of chemical species involved in oxidation reactions was studied. The quantitation of hydroperoxides and hydroxyl radicals was carried out in reverse phase chromatography using triphenylphosphine and terephthalic acid, respectively, as chemical probes. Both reactive oxygen species were found in the tideline immediately after its formation, in the range of micromoles and nanomoles per gram of paper, respectively. The results indicate that hydroxyl radicals form for the most part in paper before the tideline experiment, whereas hydroperoxides appear to be produced primarily during tideline formation. Iron sulfate impregnation of the paper raised the production of hydroperoxides. After hygrothermal aging in sealed vials the hydroxyl radical content in paper increased significantly. When aged together in the same vial, tideline samples strongly influenced the degradation of samples from other areas of the paper (multi-sample aging). Different types of antioxidants were added to the paper before the tideline experiment to investigate their effect on the oxidation reactions taking place. In samples treated with iron sulfate or artificially aged, the addition of Irgafos 168 (tris(2,4-ditert-butylphenyl) phosphate) and Tinuvin 292 (bis(1,2,2,6,6-pentamethyl-4-piperidyl) sebacate and methyl 1,2,2,6,6-pentamethyl-4-piperidyl sebacate) reduced the concentration of hydroperoxides and hydroxyl radicals, respectively. Tinuvin 292 was also found to considerably lower the rate of cellulose chain scission reactions during hygrothermal aging of the paper. Copyright © 2013 Elsevier Ltd. All rights reserved.

  7. Spin-transport-phenomena in metals, semiconductors, and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias Klaus

    2012-07-19

    Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

  8. Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

    International Nuclear Information System (INIS)

    Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

    2012-01-01

    In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

  9. Perspective: A controversial benchmark system for water-oxide interfaces: H2O/TiO2(110)

    Science.gov (United States)

    Diebold, Ulrike

    2017-07-01

    The interaction of water with the single-crystalline rutile TiO2(110) surface has been the object of intense investigations with both experimental and computational methods. Not only is TiO2(110) widely considered the prototypical oxide surface, its interaction with water is also important in many applications where this material is used. At first, experimental measurements were hampered by the fact that preparation recipes for well-controlled surfaces had yet to be developed, but clear experimental evidence that water dissociation at defects including oxygen vacancies and steps emerged. For a perfect TiO2(110) surface, however, an intense debate has evolved whether or not water adsorbs as an intact molecule or if it dissociates by donating a proton to a so-called bridge-bonded surface oxygen atom. Computational studies agree that the energy difference between these two states is very small and thus depends sensitively on the computational setup and on the approximations used in density functional theory (DFT). While a recent molecular beam/STM experiment [Z.-T. Wang et al., Proc. Natl. Acad. Sci. U. S. A. 114(8), 1801-1805 (2017)] gives conclusive evidence for a slight preference (0.035 eV) for molecular water and a small activation energy of (0.36 eV) for dissociation, understanding the interface between liquid water and TiO2(110) arises as the next controversial frontier.

  10. Thermal insulating panel

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, J.T.

    1985-09-11

    A panel of thermal insulation material has at least one main portion which comprises a dry particulate insulation material compressed within a porous envelope so that it is rigid or substantially rigid and at least one auxiliary portion which is secured to and extends along at least one of the edges of the main portions. The auxiliary portions comprise a substantially uncompressed dry particulate insulation material contained within an envelope. The insulation material of the auxiliary portion may be the same as or may be different from the insulation material of the main portion. The envelope of the auxiliary portion may be made of a porous or a non-porous material. (author).

  11. Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

    International Nuclear Information System (INIS)

    Brillson, L. J.; Young, A. P.; White, B. D.; Schaefer, J.; Niimi, H.; Lee, Y. M.; Lucovsky, G.

    2000-01-01

    Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO 2 deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas processing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-semiconductor junctions. (c) 2000 American Vacuum Society

  12. Nanostructure-Directed Chemical Sensing: The IHSAB Principle and the Effect of Nitrogen and Sulfur Functionalization on Metal Oxide Decorated Interface Response

    Directory of Open Access Journals (Sweden)

    James L. Gole

    2013-08-01

    Full Text Available The response matrix, as metal oxide nanostructure decorated n-type semiconductor interfaces are modified in situ through direct amination and through treatment with organic sulfides and thiols, is demonstrated. Nanostructured TiO2, SnOx, NiO and CuxO (x = 1,2, in order of decreasing Lewis acidity, are deposited to a porous silicon interface to direct a dominant electron transduction process for reversible chemical sensing in the absence of significant chemical bond formation. The metal oxide sensing sites can be modified to decrease their Lewis acidity in a process appearing to substitute nitrogen or sulfur, providing a weak interaction to form the oxynitrides and oxysulfides. Treatment with triethylamine and diethyl sulfide decreases the Lewis acidity of the metal oxide sites. Treatment with acidic ethane thiol modifies the sensor response in an opposite sense, suggesting that there are thiol (SH groups present on the surface that provide a Brønsted acidity to the surface. The in situ modification of the metal oxides deposited to the interface changes the reversible interaction with the analytes, NH3 and NO. The observed change for either the more basic oxynitrides or oxysulfides or the apparent Brønsted acid sites produced from the interaction of the thiols do not represent a simple increase in surface basicity or acidity, but appear to involve a change in molecular electronic structure, which is well explained using the recently developed inverse hard and soft acids and bases (IHSAB model.

  13. Investigation of the Alkaline Electrochemical Interface and Development of Composite Metal/Metal-Oxides for Hydrogen and Oxygen Electrodes

    Science.gov (United States)

    Bates, Michael

    electrolyte. The HER kinetics of numerous binary & ternary Ni-alloys and composite Ni/metal-oxide/C samples were evaluated in aqueous 0.1 M KOH electrolyte. Furthermore a model of the double layer interface is proposed, which helps explain the observed ensemble effect in the presence of AEI. In Chapter 3, Ni-Fe and Ni-Fe-Co mixed-metal-oxide (MMO) films were investigated for oxygen evolution reaction (OER) activity in 0.1M KOH on high surface area Raney-Nickel supports. During investigations of MMO activity, aniline was identified as a useful "capping agent" for synthesis of high-surface area MMO-polyaniline (PANI) composite materials. A Ni-Fe-Co/PANI-Raney-Ni catalyst was developed which exhibits enhanced mass-activity compared to state-of-the-art Ni-Fe OER electrocatalysts reported to date. The morphology of the MMO catalyst film on PANI/Raney-Ni support provides excellent dispersion of active-sites and should maintain high active-site utilization for catalyst loading on gas-diffusion electrodes. In Chapter 4, the de-activation of reversible-hydrogen electrode catalysts was investigated and the development of a Pt-Ir-Nx/C catalyst is reported, which exhibits significantly increased stability in the HBr/Br 2 electrolyte. In contrast a Pt-Ir/C catalyst exhibited increased tolerance to high-voltage cycling and in particular showed recovery of electrocatalytic activity after reversible de-activation (presumably from bromide adsorption and subsequent oxidative bromide stripping). Under the harshest testing conditions of high-voltage cycling or exposure to Br2 the Pt-based catalyst showed a trend in stability: Pt < Pt-Ir < Pt-Ir-Nx. (Abstract shortened by UMI.).

  14. Growing LaAlO3/SrTiO3 interfaces by sputter deposition

    Directory of Open Access Journals (Sweden)

    I. M. Dildar

    2015-06-01

    Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

  15. Design of Chern insulating phases in honeycomb lattices

    Science.gov (United States)

    Pickett, Warren E.; Lee, Kwan-Woo; Pentcheva, Rossitza

    2018-06-01

    The search for robust examples of the magnetic version of topological insulators, referred to as quantum anomalous Hall insulators or simply Chern insulators, so far lacks success. Our groups have explored two distinct possibilities based on multiorbital 3d oxide honeycomb lattices. Each has a Chern insulating phase near the ground state, but materials parameters were not appropriate to produce a viable Chern insulator. Further exploration of one of these classes, by substituting open shell 3d with 4d and 5d counterparts, has led to realistic prediction of Chern insulating ground states. Here we recount the design process, discussing the many energy scales that are active in participating (or resisting) the desired Chern insulator phase.

  16. Oxide/polymer nanocomposites as new luminescent materials

    Science.gov (United States)

    Vollath, D.; Szabó, D. V.; Schlabach, S.

    2004-06-01

    It is demonstrated that nanocomposites, consisting of an electrically insulating oxide core and PMMA coating exhibit strong luminescence. This luminescence is connected to the interface, where PMMA is bond via a carboxylate bonding to the surface. In this case, luminescence is originated at the carbonyl group of the coating polymer. With decreasing particle size, this emission shows a blue shift, following a law inversely the ones found for quantum confinement systems. For semi-conducting oxides, such as ZnO, this interface related emission is found additionally to quantum confinement phenomena.

  17. Interface superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gariglio, S., E-mail: stefano.gariglio@unige.ch [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland); Gabay, M. [Laboratoire de Physique des Solides, Bat 510, Université Paris-Sud 11, Centre d’Orsay, 91405 Orsay Cedex (France); Mannhart, J. [Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany); Triscone, J.-M. [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland)

    2015-07-15

    Highlights: • We discuss interfacial superconductivity, a field boosted by the discovery of the superconducting interface between LaAlO. • This system allows the electric field control and the on/off switching of the superconducting state. • We compare superconductivity at the interface and in bulk doped SrTiO. • We discuss the role of the interfacially induced Rashba type spin–orbit. • We briefly discuss superconductivity in cuprates, in electrical double layer transistor field effect experiments. • Recent observations of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3} are presented. - Abstract: Low dimensional superconducting systems have been the subject of numerous studies for many years. In this article, we focus our attention on interfacial superconductivity, a field that has been boosted by the discovery of superconductivity at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3}. We explore the properties of this amazing system that allows the electric field control and on/off switching of superconductivity. We discuss the similarities and differences between bulk doped SrTiO{sub 3} and the interface system and the possible role of the interfacially induced Rashba type spin–orbit. We also, more briefly, discuss interface superconductivity in cuprates, in electrical double layer transistor field effect experiments, and the recent observation of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3}.

  18. Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

    Science.gov (United States)

    Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

    2008-10-01

    The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

  19. Effect of Trimethylamine N-Oxide on Interfacial Electrostatics at Phospholipid Monolayer-Water Interfaces and Its Relevance to Cardiovascular Disease.

    Science.gov (United States)

    Mondal, Jahur A

    2016-05-05

    Trimethylamine N-oxide (TMAO), a metabolite of choline containing dietary nutrients which are abundant in red meat, egg, and other animal foods, increases the risk of cardiovascular disease (e.g., atherosclerosis) by boosted accumulation of fatty deposits on artery wall. Hence, for the molecular level elucidation of the pathogenesis of atherosclerosis, it is important to understand the effect of TMAO at the endothelial cell membrane-blood interface (artery wall). Heterodyne-detected vibrational sum frequency generation (HD-VSFG) study of a zwitterionic phosphatidylcholine (PC) lipid monolayer-water interface (mimic of endothelial membrane-blood interface) shows that the interfacial water becomes increasingly H-up oriented in the presence of TMAO in the aqueous phase, revealing a dramatic change in the interfacial electrostatics. Examinations of charged lipid interfaces show that TMAO screens anionic phosphate less effectively than cationic choline, which confirms that TMAO increases the relative influence of the anionic phosphate by preferential screening of the cationic choline at the zwitterionic PC lipid interface where the phosphate and choline groups are simultaneously present. Together, it is conceivable that at an elevated TMAO level in serum would modify the electrostatics at the endothelial cell membrane-blood interface (artery wall), which may affect the influx/efflux of fatty deposits on artery wall, setting the stage for atherosclerosis.

  20. Interface-Induced Phenomena in Magnetism.

    Science.gov (United States)

    Hellman, Frances; Hoffmann, Axel; Tserkovnyak, Yaroslav; Beach, Geoffrey S D; Fullerton, Eric E; Leighton, Chris; MacDonald, Allan H; Ralph, Daniel C; Arena, Dario A; Dürr, Hermann A; Fischer, Peter; Grollier, Julie; Heremans, Joseph P; Jungwirth, Tomas; Kimel, Alexey V; Koopmans, Bert; Krivorotov, Ilya N; May, Steven J; Petford-Long, Amanda K; Rondinelli, James M; Samarth, Nitin; Schuller, Ivan K; Slavin, Andrei N; Stiles, Mark D; Tchernyshyov, Oleg; Thiaville, André; Zink, Barry L

    2017-01-01

    This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

  1. Design and construction of the mineral insulated magnets

    International Nuclear Information System (INIS)

    Kurokawa, S.; Hirabayashi, H.; Taino, M.; Tsuchiya, K.; Yamamoto, A.

    1978-01-01

    The radiation resistant magnets with mineral insulated coils are designed and constructed. The electrical insulation of the cable is maintained by magnesium oxide in the form of a powder held around the copper hollow conductor by a copper shieth. By the direct water cooling through a hollow conductor the sometimes conflicting requirements of good insulation and high field are fulfilled. The magnets can with stand more than 10 12 rad of absorbed dose. (author)

  2. Study of niobium oxidation by photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Durand, C.

    1985-01-01

    The chemical composition of thin oxide layers, grown on clean niobium, in low oxygen pressure, was studied by a surface analysis method: X-ray Photoelectron Spectroscopy. The purpose of this study was to find the best conditions for the building of Nb/Nb oxide/Pb Josephson junctions, and particularly to minimise the interface thickness during the formation of the insulator film (Nb 2 O 5 ) on the metal (Nb). This interface is essentially formed by the monoxide (NbO) and dioxide (NbO 2 ). Nb 3d XPS core level peak positions and area ratios (obtained by the signal decomposition) of the components of the total peak, were used to determine the presence of the different oxidation states II, IV and V, their relative abundance, oxide thicknesses and their depth distribution. All this information was extracted by a special numerical procedure [fr

  3. Continuous Reduced Graphene Oxide Film Prepared by Stitching of Nanosheets at the Interface of Two Immiscible Solutions

    International Nuclear Information System (INIS)

    Sohn, Young Ku; Kim, Seog K.; Min, Bong Ki

    2011-01-01

    RGO sheets dispersed in water are prepared by chemical reduction of GO using ascorbic acid. By mixing and sonication of submicron-size RGO sheets in two immiscible liquids (e. g., chloroform and water) for the first time we have prepared a continuous large-area RGO film at the interface. In other words, we have shown that aggregated RGO sheets could be fully stretched at the interface to form a continuous film. The RGO film has been characterized by SEM, TEM, UV-vis absorption, XPS and Raman. The film exhibits high flexibility, transparency, and very long-term stability without forming aggregations. Without requiring vapor deposition, a special instrument, or a filtration followed by a removing the filter paper one could easily achieve a continuous RGO-film in any laboratories. Our solution-based method is much simpler and cost-effective, and very good for large scale mass production. This finding could boost real applications of graphene in laboratory and industry, and provide a new methodology for the fabrication of large-area continuous graphene films. Graphene, an atom-thick two-dimensional (2D) honeycomb lattice sheet of sp 2 -bonded carbon atoms, has recently been emerged as a new promising material in various fields. Because of its gigantic charge carrier mobility it could be applied to field-effect transistors as a substitute of silicon. Due to its transparency and high electrical conductivity, it could be used as a substitute of ITO electrode in solar cells and light-emitting diodes. Other superior properties include large surface area, flexibility, strength, stiffness, and thermal conductivity. These provides wide applications of graphene including supercapa-citor, battery, sensor, storage and drug delivery. For real applications, large-scale of graphene sheets or films needs to be prepared. Large-area (orders of centimeters) graphene films have recently been fabricated using a chemical vapor deposition (CVD) method on various metal substrates. This

  4. Probing electronic and vibrational properties at the electrochemical interface using SFG spectroscopy: Methanol electro-oxidation on Pt(1 1 0)

    Science.gov (United States)

    Vidal, F.; Busson, B.; Tadjeddine, A.

    2005-02-01

    We report the study of methanol electro-oxidation on Pt(1 1 0) using infrared-visible sum-frequency generation (SFG) vibrational spectroscopy. The use of this technique enables to probe the vibrational and electronic properties of the interface simultaneously in situ. We have investigated the vibrational properties of the interface in the CO ads internal stretch spectral region (1700-2150 cm -1) over a wide range of potentials. The analysis of the evolution of the C-O stretch line shape, which is related to the interference between the vibrational and electronic parts of the non-linear response, with the potential allows us to show that the onset of bulk methanol oxidation corresponds to the transition from a negatively to a positively charged surface.

  5. Pr-O-Al-N dielectrics for metal insulator semiconductor stacks

    Energy Technology Data Exchange (ETDEWEB)

    Henkel, Karsten; Torche, Mohamed; Sohal, Rakesh; Karavaev, Konstantin; Burkov, Yevgen; Schwiertz, Carola; Schmeisser, Dieter [Brandenburg University of Technology, Chair of Applied Physics and Sensors, K.-Wachsmann-Allee 1, 03046 Cottbus (Germany)

    2011-02-15

    This work focuses on praseodymium oxide films as a high-k material on silicon and silicon carbide (SiC) in metal insulator semiconductor samples. The electrical results are correlated to spectroscopic findings on this material system. Strong interfacial reactions between the praseodymium oxide and the semiconductor as well as silicon inter-diffusion into the high-k material are observed. The importance of a buffer layer is discussed and its optimisation is addressed, too. In particular the improvement of the performance by the introduction of an aluminium oxynitride buffer layer, which acts as an inter-diffusion barrier and reduces the leakage current, the interface state density and the equivalent oxide thickness is demonstrated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Effect of Nb2O5 doping on improving the thermo-mechanical stability of sealing interfaces for solid oxide fuel cells.

    Science.gov (United States)

    Zhang, Qi; Du, Xinhang; Tan, Shengwei; Tang, Dian; Chen, Kongfa; Zhang, Teng

    2017-07-13

    Nb 2 O 5 is added to a borosilicate sealing system to improve the thermo-mechanical stability of the sealing interface between the glass and Fe-Cr metallic interconnect (Crofer 22APU) in solid oxide fuel cells (SOFCs). The thermo-mechanical stability of the glass/metal interface is evaluated experimentally as well as by using a finite element analysis (FEA) method. The sealing glass doped with 4 mol.% Nb 2 O 5 shows the best thermo-mechanical stability, and the sealing couple of Crofer 22APU/glass/GDC (Gd 0.2 Ce 0.8 O 1.9 ) remains intact after 50 thermal cycles. In addition, all sealing couples show good joining after being held at 750 °C for 1000 h. Moreover, the possible mechanism on the thermo-mechanical stability of sealing interface is investigated in terms of stress-based and energy-based perspectives.

  7. Microstructural studies on degradation of interface between LSM–YSZ cathode and YSZ electrolyte in SOFCs

    DEFF Research Database (Denmark)

    Liu, Yi-Lin; Hagen, Anke; Barfod, Rasmus

    2009-01-01

    The changes in the cathode/electrolyte interface microstructure have been studied on anode-supported technological solid oxide fuel cells (SOFCs) that were subjected to long-term (1500 h) testing at 750 °C under high electrical loading (a current density of 0.75 A/cm2). These cells exhibit...... different cathode degradation rates depending on, among others, the composition of the cathode gas, being significantly smaller in oxygen than in air. FE-SEM and high resolution analytical TEM were applied for characterization of the interface on a submicron- and nano-scale. The interface degradation has...... to decrease further due to the more pronounced formation of insulating zirconate phases that are present locally and preferably in LSM/YSZ electrolyte contact areas. The effects of the cathode gas on the interface degradation are discussed considering the change of oxygen activity at the interface, possible...

  8. Phenomenological theory of current-producing processes at the solid oxide electrolyte/gas electrode interface: steady-state polarization of fuel-cell electrodes

    International Nuclear Information System (INIS)

    Murygin, I.V.; Chebotin, V.N.

    1979-01-01

    The polarization of fuel-cell electrodes (mixtures CO + CO 2 and H 2 + H 2 O) in systems with solid oxide electrolytes is discussed. The theory is based upon a process model where the electrode reaction zone can spread along the line of three-phase contact by diffusion of reaction partners and products across the electrolyte/electrode and electrolyte/gas interface

  9. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

    1999-07-02

    n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

  10. Panels of microporous insulation

    Energy Technology Data Exchange (ETDEWEB)

    McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.J.

    1990-08-07

    Microporous thermal insulation materials have a lattice structure in which the average interstitial dimension is less than the mean free path of the molecules of air or other gas in which the material is arranged. This results in a heat flow which is less than that attributable to the molecular heat diffusion of the gas. According to this invention, a method is provided for manufacturing panels of microporous thermal insulation, in particular such panels in which the insulation material is bonded to a substrate. The method comprises the steps of applying a film of polyvinyl acetate emulsion to a non-porous substrate, and compacting powdery microporous thermal insulation material against the film so as to cause the consolidated insulation material to bond to the substrate and form a panel. The polyvinyl acetate may be applied by brushing or spraying, and is preferably allowed to dry prior to compacting the insulation material. 1 fig.

  11. Wall insulation system

    Energy Technology Data Exchange (ETDEWEB)

    Kostek, P.T.

    1987-08-11

    In a channel specially designed to fasten semi-rigid mineral fibre insulation to masonry walls, it is known to be constructed from 20 gauge galvanized steel or other suitable material. The channel is designed to have pre-punched holes along its length for fastening of the channel to the drywall screw. The unique feature of the channel is the teeth running along its length which are pressed into the surface of the butted together sections of the insulation providing a strong grip between the two adjacent pieces of insulation. Of prime importance to the success of this system is the recent technological advancements of the mineral fibre itself which allow the teeth of the channel to engage the insulation fully and hold without mechanical support, rather than be repelled or pushed back by the inherent nature of the insulation material. After the insulation is secured to the masonry wall by concrete nail fastening systems, the drywall is screwed to the channel.

  12. Half-metallic and insulating natures in Ru-based ordered double perovskite oxides Ba_2X"I"I"IRu"VO_6 (X = V, Cr) induced by 3d-t_2_g"n orbital filling

    International Nuclear Information System (INIS)

    Saad, H.-E.M. Musa; Althoyaib, S.S.

    2017-01-01

    In this paper, we present results of a comprehensive systemic study of the crystal, electronic and magnetic structures on two members of Ru-based ordered double perovskite oxides Ba_2XRuO_6 (X = V, Cr). For the corporate compound, the analysis of density of states (DOS) results suggests that the 3d-t_2_g orbital filling plays a major role in governing the conduction mechanism in these systems. The DOS and magnetic results show that Ba_2XRuO_6 exhibits half-metallic (HM) nature as X = V, where the electronic structure of Ba_2V"I"I"IRu"VO_6 with 3d-t_2_g"2 behaves like that of HM ferrimagnetic (FI), switches to compensate FI insulating behavior as X = Cr, with an extra electron filled 3d-t_2_g"3 in Ba_2Cr"I"I"IRu"VO_6. We find, on consideration of electron correlation (LSDA+U) and spin-orbital coupling (SOC) effects that the electronic structure of Ba_2XRuO_6 takes a HM nature, whereas it is completely transformed to insulating nature once an extra electron filled the 3d-t_2_g orbitals in X = Cr case. Such tuning is accompanied by spin-state hopping of one electron from half-filled spin-state in Ru"V (t_2_g"3 e_g"0) to two and three occupied spin-state in V"I"I"I (t_2_g"2 e_g"0) and Cr"I"I"I (t_2_g"3 e_g"0), respectively. The charge distribution results show that this extra electron occupies chiefly the spin-down of conduction orbitals and plays a major role in determining the electronic and magnetic structures of Ba_2XRuO_6 system. - Highlights: • Half-metallic and insulating natures are observed in Ba_2XRuO_6 (X = V, Cr). • 3d-t_2_g"n orbitals filling plays a major role in governing the conduction mechanism. • LSDA+U method under density functional theory (DFT) is considered. • HM ferrimagnetic (FI) (X = V) switch to compensate FI insulating (X = Cr).

  13. Heat resistance insulation for NPP pipelines and components

    International Nuclear Information System (INIS)

    Yurchenko, V.G.; Nazarova, G.A.; Popov, A.M.; Matveeva, N.F.

    1986-01-01

    To insulate hot surfaces of NPP process equipment and pipes it is suggested to use heat resistant insulation of foam aminoimides (FAI). Relative toxicity of aceton and acetaldehyd evolved from FAI in the process of thermal and thermal-oxidative break-down was determined. FAI can be used at 200 deg C

  14. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    Science.gov (United States)

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-04

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

  15. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  16. Magnetic coupling at perovskite and rock-salt structured interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Matvejeff, M., E-mail: mikko.matvejeff@picosun.com [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, 277-8581 Chiba (Japan); Department of Chemistry, Aalto University, Kemistintie 1, 02150 Espoo (Finland); Ahvenniemi, E. [Department of Chemistry, Aalto University, Kemistintie 1, 02150 Espoo (Finland); Takahashi, R.; Lippmaa, M. [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, 277-8581 Chiba (Japan)

    2015-10-05

    We study magnetic coupling between hole-doped manganite layers separated by either a perovskite or a rock-salt barrier of variable thickness. Both the type and the quality of the interface have a strong impact on the minimum critical barrier thickness where the manganite layers become magnetically decoupled. A rock-salt barrier layer only 1 unit cell (0.5 nm) thick remains insulating and is able to magnetically de-couple the electrode layers. The technique can therefore be used for developing high-performance planar oxide electronic devices such as magnetic tunnel junctions and quantum well structures that depend on magnetically and electronically sharp heterointerfaces.

  17. Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

    Science.gov (United States)

    Padilha, A. C. M.; McKenna, K. P.

    2018-04-01

    Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

  18. Electrical insulator assembly with oxygen permeation barrier

    Science.gov (United States)

    Van Der Beck, Roland R.; Bond, James A.

    1994-01-01

    A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

  19. Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

    Science.gov (United States)

    Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

    2017-06-01

    The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

  20. Translucent insulating building envelope

    DEFF Research Database (Denmark)

    Rahbek, Jens Eg

    1997-01-01

    A new type of translucent insulating material has been tested. This material is made of Celulose-Acetat and have a honey-comb structure. The material has a high solar transmittance and is highly insulating. The material is relatively cheap to produce. Danish Title: Translucent isolerende klimaskærm....

  1. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  2. Correlation between Co-60 and X-ray exposures on radiation-induced charge buildup in silicon-on-insulator buried oxides

    International Nuclear Information System (INIS)

    Schwank, James R.; Shaneyfelt, Marty R.; Loemker, Rhonda Ann; Draper, Bruce L.; Dodd, Paul E.; Witczak, StevenN C.; Riewe, Leonard Charles; Ferlet-Cavrois, V.; Paillet, P.; Leray, J.-L.; Fleetwood, D.M.

    2000-01-01

    Large differences in charge buildup in SOI buried oxides can result between x-ray and Co-60 irradiations. The effects of bias configuration and substrate type on charge buildup and hardness assurance issues are explored

  3. Near-Field Nanoscopy of Metal-Insulator Phase Transitions Towards Synthesis of Novel Correlated Transition Metal Oxides and Their Interaction with Plasmon Resonances

    Science.gov (United States)

    2016-01-05

    metal and osmium (IV) oxide in the presence of stoichiometric amounts of magnesium oxide. The crystal structure was refined using powder X-ray...The blue octahedral represent [MO6]7-, the yellow circles are Li rich positions and the large green circles are magnesium rich positions material...M. Lazzeri, A. K. Geim, and C. Casiraghi, Raman Fingerprint of Aligned Graphene/H-Bn Superlattices, Nano Letters 13, 5242-5246 (2013). 13. Q. H

  4. Sound Insulation between Dwellings

    DEFF Research Database (Denmark)

    Rasmussen, Birgit

    2011-01-01

    Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

  5. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  6. Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

    Directory of Open Access Journals (Sweden)

    Michael E. Flatté

    2017-05-01

    Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

  7. Self-assembling of poly(ε-caprolactone)-b-poly(ethylene oxide) diblock copolymers in aqueous solution and at the silica-water interface

    International Nuclear Information System (INIS)

    Leyh, B.; Vangeyte, P.; Heinrich, M.; Auvray, L.; De Clercq, C.; Jerome, R.

    2004-01-01

    Small-angle neutron scattering is used to investigate the self-assembling behaviour of poly(ε-caprolactone)-b-poly(ethylene oxide) diblock copolymers with various block lengths (i) in aqueous solution, (ii) in aqueous solution with the addition of sodium dodecyl sulphate (SDS) and (iii) at the silica-water interface. Micelles are observed under our experimental conditions due to the very small critical micellar concentration of these copolymers (0.01 g/l). The poly(ε-caprolactone) core is surrounded by a poly(ethylene oxide) corona. The micellar form factors have been measured at low copolymer concentrations (0.2 wt%) under selected contrast matching conditions. The data have been fitted to various analytical models to extract the micellar core and corona sizes. SDS is shown to induce partial micelle disruption together with an increase of the poly(ethylene oxide) corona extension from 25% (without SDS) to 70% (with SDS) of a completely extended PEO 114 chain. Our data at the silica-water interface are compatible with the adsorption of micelles

  8. Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Flynn, Brendan T; Oleksak, Richard P; Thevuthasan, Suntharampillai; Herman, Gregory S

    2018-01-31

    A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In 3+ to In 0 , that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O 2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

  9. Heat insulation support device

    International Nuclear Information System (INIS)

    Takahashi, Hiroyuki; Koda, Tomokazu; Motojima, Osamu; Yamamoto, Junya.

    1994-01-01

    The device of the present invention comprises a plurality of heat insulation legs disposed in a circumferential direction. Each of the heat insulative support legs has a hollow shape, and comprises an outer column and an inner column as support structures having a heat insulative property (heat insulative structure), and a thermal anchor which absorbs compulsory displacement by a thin flat plate (displacement absorber). The outer column, the thermal anchor and the inner column are connected by a support so as to offset the positional change of objects to be supported due to shrinkage when they are shrunk. In addition, the portion between the superconductive coils as the objects to be supported and the inner column is connected by the support. The superconductive thermonuclear device is entirely contained in a heat insulative vacuum vessel, and the heat insulative support legs are disposed on a lower lid of the heat insulative vacuum vessel. With such a constitution, they are strengthened against lateral load and buckling, thereby enabling to reduce the amount of heat intrusion while keeping the compulsory displacement easy to be absorbed. (I.N.)

  10. Thermal oxidation induced degradation of carbon fiber reinforced composites and carbon nanotube sheet enhanced fiber/matrix interface for high temperature aerospace structural applications

    Science.gov (United States)

    Haque, Mohammad Hamidul

    Recent increase in the use of carbon fiber reinforced polymer matrix composite, especially for high temperature applications in aerospace primary and secondary structures along with wind energy and automotive industries, have generated new challenges to predict its failure mechanisms and service life. This dissertation reports the experimental study of a unidirectional carbon fiber reinforced bismaleimide (BMI) composites (CFRC), an excellent candidate for high temperature aerospace components, undergoing thermal oxidation at 260 °C in air for over 3000 hours. The key focus of the work is to investigate the mechanical properties of the carbon fiber BMI composite subjected to thermal aging in three key aspects - first, studying its bulk flexural properties (in macro scale), second, characterizing the crack propagation along the fiber direction, representing the interfacial bonding strength between fiber and matrix (in micro scale), and third, introducing nano-structured materials to modify the interface (in nano scale) between the carbon fiber and BMI resin and mechanical characterization to study its influence on mitigating the aging effect. Under the first category, weight loss and flexural properties have been monitored as the oxidation propagates through the fiber/matrix interface. Dynamic mechanical analysis and micro-computed tomography analysis have been performed to analyze the aging effects. In the second category, the long-term effects of thermal oxidation on the delamination (between the composite plies) and debonding (between fiber and matrix) type fracture toughness have been characterized by preparing two distinct types of double cantilever beam specimens. Digital image correlation has been used to determine the deformation field and strain distribution around the crack propagation path. Finally the resin system and the fiber/matrix interface have been modified using nanomaterials to mitigate the degradations caused by oxidation. Nanoclay modified

  11. Investigation of Vacuum Insulator Surface Dielectric Strength with Nanosecond Pulses

    International Nuclear Information System (INIS)

    Nunnally, W.C.; Krogh, M.; Williams, C.; Trimble, D.; Sampayan, S.; Caporaso, G.

    2003-01-01

    The maximum vacuum insulator surface dielectric strength determines the acceleration electric field gradient possible in a short pulse accelerator. Previous work has indicated that higher electric field strengths along the insulator-vacuum interface might be obtained as the pulse duration is decreased. In this work, a 250 kV, single ns wide impulse source was applied to small diameter, segmented insulators samples in a vacuum to evaluate the multi-layer surface dielectric strength of the sample construction. Resonances in the low inductance test geometry were used to obtain unipolar, pulsed electric fields in excess of 100 MV/m on the insulator surface. The sample construction, experimental arrangement and experimental results are presented for the initial data in this work. Modeling of the multi-layer structure is discussed and methods of improving insulator surface dielectric strength in a vacuum are proposed

  12. Vacuum foil insulation system

    International Nuclear Information System (INIS)

    Hanson, J.P.; Sabolcik, R.E.; Svedberg, R.C.

    1976-01-01

    In a multifoil thermal insulation package having a plurality of concentric cylindrical cups, means are provided for reducing heat loss from the penetration region which extends through the cups. At least one cup includes an integral skirt extending from one end of the cup to intersection with the penetration means. Assembly of the insulation package with the skirted cup is facilitated by splitting the cup to allow it to be opened up and fitted around the other cups during assembly. The insulation is for an implantable nuclear powered artificial heart

  13. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

    Science.gov (United States)

    2014-01-01

    ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

  14. Protein and lipid oxidation affect the viscoelasticity of whey protein layers at the oil-water interface

    NARCIS (Netherlands)

    Berton-Carabin, Claire C.; Schroder, Anja; Rovalino-Cordova, Ana; Schroën, Karin; Sagis, Leonard

    2016-01-01

    Protein and lipid oxidation are prevailing issues that negatively affect the nutritional and sensory quality of food emulsions. It is probable that such oxidative modifications affect the functional properties of proteins, and in particular their ability to form densely packed, interconnected

  15. Cooper Pairs in Insulators?

    International Nuclear Information System (INIS)

    Valles, James

    2008-01-01

    Nearly 50 years elapsed between the discovery of superconductivity and the emergence of the microscopic theory describing this zero resistance state. The explanation required a novel phase of matter in which conduction electrons joined in weakly bound pairs and condensed with other pairs into a single quantum state. Surprisingly, this Cooper pair formation has also been invoked to account for recently uncovered high-resistance or insulating phases of matter. To address this possibility, we have used nanotechnology to create an insulating system that we can probe directly for Cooper pairs. I will present the evidence that Cooper pairs exist and dominate the electrical transport in these insulators and I will discuss how these findings provide new insight into superconductor to insulator quantum phase transitions.

  16. Gas insulated substations

    CERN Document Server

    2014-01-01

    This book provides an overview on the particular development steps of gas insulated high-voltage switchgear, and is based on the information given with the editor's tutorial. The theory is kept low only as much as it is needed to understand gas insulated technology, with the main focus of the book being on delivering practical application knowledge. It discusses some introductory and advanced aspects in the meaning of applications. The start of the book presents the theory of Gas Insulated Technology, and outlines reliability, design, safety, grounding and bonding, and factors for choosing GIS. The third chapter presents the technology, covering the following in detail: manufacturing, specification, instrument transformers, Gas Insulated Bus, and the assembly process. Next, the book goes into control and monitoring, which covers local control cabinet, bay controller, control schemes, and digital communication. Testing is explained in the middle of the book before installation and energization. Importantly, ...

  17. Thermal insulation product for insulation, especially in nuclear power engineering, and method of its production

    International Nuclear Information System (INIS)

    Veselovsky, P.; Zink, S.; Balacek, P.; Mares, I.

    1989-01-01

    The insulation consists of a sewn fabric cover made of inorganic fibers, in which the fiber filling is reinforced mechanically by dense point interweaving. The inorganic fibers, 1 to 5 μm in diameter, consist of min. 97 wt.% mixture of aluminium and silicon oxides in the vitreous state. The fibers making up the cover consist of min. 95% silicon, aluminium, calcium, magnesium and boron oxides in the vitreous state; the rest can consist of alloy steel fibres. The bulk density of the insulation is 70 to 150 kg/m 3 . The product is highly resistant to temperature and to the action of chemicals, water, and acid and alkaline deactivation solutions. Its manufacture is fast and undemanding. It is designed for thermal insulation of pipes, tanks and valves in nuclear power plants. (M.D.). 2 figs

  18. Trimethylamine N-oxide (TMAO) and tert-butyl alcohol (TBA) at hydrophobic interfaces: insights from molecular dynamics simulations.

    Science.gov (United States)

    Fiore, Andrew; Venkateshwaran, Vasudevan; Garde, Shekhar

    2013-06-25

    TMAO, a potent osmolyte, and TBA, a denaturant, have similar molecular architecture but somewhat different chemistry. We employ extensive molecular dynamics simulations to quantify their behavior at vapor-water and octane-water interfaces. We show that interfacial structure-density and orientation-and their dependence on solution concentration are markedly different for the two molecules. TMAO molecules are moderately surface active and adopt orientations with their N-O vector approximately parallel to the aqueous interface. That is, not all methyl groups of TMAO at the interface point away from the water phase. In contrast, TBA molecules act as molecular amphiphiles, are highly surface active, and, at low concentrations, adopt orientations with their methyl groups pointing away and the C-O vector pointing directly into water. The behavior of TMAO at aqueous interfaces is only weakly dependent on its solution concentration, whereas that of TBA depends strongly on concentration. We show that this concentration dependence arises from their different hydrogen bonding capabilities-TMAO can only accept hydrogen bonds from water, whereas TBA can accept (donate) hydrogen bonds from (to) water or other TBA molecules. The ability to self-associate, particularly visible in TBA molecules in the interfacial layer, allows them to sample a broad range of orientations at higher concentrations. In light of the role of TMAO and TBA in biomolecular stability, our results provide a reference with which to compare their behavior near biological interfaces. Also, given the ubiquity of aqueous interfaces in biology, chemistry, and technology, our results may be useful in the design of interfacially active small molecules with the aim to control their orientations and interactions.

  19. Experimental investigation of electronic and magnetic properties of LaAlO{sub 3}-SrTiO{sub 3} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Richter, Christoph

    2013-02-08

    This thesis is an experimental study of the interface between LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO). Both materials are non-magnetic insulators. LAO-STO interfaces, however, can be conducting, and even superconducting at millikelvin temperatures. Moreover, using cantilever-based torque magnetometry we have found a ferromagnetic-like ordering at such interfaces that coexists with the superconductivity. To gain insight into the underlying electronic structure I have developed and built solid-state planar tunnel devices with LAO-STO interfaces as one tunneling electrode. Using these devices the electronic density of states (DOS) of normal- and superconducting LAO-STO interfaces was mapped with tunneling spectroscopy. Since the charge carrier density at LAO-STO interfaces is highly tunable with electrostatic gating, the spectral DOS of the 2D-superconductor could be explored across a wide T,n-phase diagram. The main result bears a striking resemblance to the pseudogap-phase of high-temperature cuprate superconductors. The appendix reports on possible technical applications of LAO-STO interfaces in field-effect transistors and integrated circuits. Furthermore, it contains extensive experimental results concerning alternative growth procedures and related material systems. The LAO-STO interface is established as a representative of a broader class of conducting oxide interfaces. In particular, a conducting oxide interface without SrTiO{sub 3}, the LaAlO{sub 3}-CaTiO{sub 3} interface, is investigated.

  20. Wrapped Multilayer Insulation

    Science.gov (United States)

    Dye, Scott A.

    2015-01-01

    New NASA vehicles, such as Earth Departure Stage (EDS), Orion, landers, and orbiting fuel depots, need improved cryogenic propellant transfer and storage for long-duration missions. Current cryogen feed line multilayer insulation (MLI) performance is 10 times worse per area than tank MLI insulation. During each launch, cryogenic piping loses approximately 150,000 gallons (equivalent to $300,000) in boil-off during transfer, chill down, and ground hold. Quest Product Development Corp., teaming with Ball Aerospace, developed an innovative advanced insulation system, Wrapped MLI (wMLI), to provide improved thermal insulation for cryogenic feed lines. wMLI is high-performance multilayer insulation designed for cryogenic piping. It uses Quest's innovative discrete-spacer technology to control layer spacing/ density and reduce heat leak. The Phase I project successfully designed, built, and tested a wMLI prototype with a measured heat leak 3.6X lower than spiral-wrapped conventional MLI widely used for piping insulation. A wMLI prototype had a heat leak of 7.3 W/m2, or 27 percent of the heat leak of conventional MLI (26.7 W/m2). The Phase II project is further developing wMLI technology with custom, molded polymer spacers and advancing the product toward commercialization via a rigorous testing program, including developing advanced vacuuminsulated pipe for ground support equipment.

  1. Effect of electrode and interface oxide on the property of ReRAM composed of Pr0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Kaji, H; Kondo, H; Fujii, T; Arita, M; Takahashi, Y

    2010-01-01

    The current-voltage (I-V) characteristics of resistance random access memories (ReRAM) composed of the [top electrode] /Pr 0.7 Ca 0.3 MnO 3 (PCMO)/Pt structure were investigated by using Au, Pt, Ag, Cr, Mo and W needles as top electrodes against the PCMO layer. Reproducible resistance switching can be recognized in devices using Cr, Mo and W. Devices using Mo and W electrode showed two type of characteristics: (A) resistance change from low resistance state to high resistance state by positive bias voltage and (B) vice versa. Since the surfaces of these needles may be oxidized, we took account of the effect by the surface oxide. To check this assumption, we annealed the W needles and Mo needles in air and investigated I-V characteristics without the PCMO layer. As a result, the characteristic-(B) was classified to be induced by a surface oxide. Meanwhile, the characteristic-(A) is from PCMO. The existence of the interface oxide between top electrode and PCMO seems to decide the type of characteristics and to influence the reproducibility of the ReRAM property.

  2. Survey of thermal insulation systems

    International Nuclear Information System (INIS)

    Kinoshita, Izumi

    1983-01-01

    Better thermal insulations have been developed to meet the growing demands of industry, and studies on thermal insulation at both high temperature and low temperature have been widely performed. The purpose of this survey is to summarize data on the performances and characteristics of thermal insulation materials and thermal insulation structures (for instance, gas cooled reactors, space vehicles and LNG storage tanks), and to discuss ravious problems regarding the design of thermal insulation structures of pool-type LMFBRs. (author)

  3. The decisive effect of interface states on the photocatalytic activity of the silver(I) oxide/titanium dioxide heterojunction.

    Science.gov (United States)

    Lei, Yanqiang; Lu, Xiaoqing

    2017-04-15

    A one-step hydrothermal method was adopted to synthesize the Ag 2 O/TiO 2 nanoheterojunction. Its photocatalytic activity was evaluated by degrading methylene blue (MB) aqueous solution under UV and visible light. The MB degradation results showed that the Ag 2 O/TiO 2 nanoheterojunction enhances the photocatalytic activity under UV irradiation rather than visible light. X-ray photoelectron spectroscopy (XPS) was performed to detect the electronic structure at the interface of Ag 2 O and TiO 2 . The XPS results confirmed that the electronic band structure of the nanoheterojunction was determined by the interface states between the Ag 2 O and TiO 2 interface. Thus, the photocatalytic enhancement mechanism can be ascribed to the creation of an additional potential barrier in the conduction band between Ag 2 O and TiO 2 , which facilitates the transport of holes from TiO 2 to Ag 2 O but inhibits the flow of electrons in the reverse direction unless sufficient potential energy is provided to overcome the additional barrier. Our results have provided a new insight on the role of interface states between the p-n nanojunction in the photocatalytic activity. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Bovet, N.; Kasama, Takeshi

    2014-01-01

    Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this no...

  5. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

    Science.gov (United States)

    Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

    2018-04-01

    Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

  6. Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator

    International Nuclear Information System (INIS)

    Jin, Hyun Soo; Cho, Young Jin; Lee, Sang-Moon; Kim, Dae Hyun; Kim, Dae Woong; Lee, Dongsoo; Park, Jong-Bong; Won, Jeong Yeon; Lee, Myoung-Jae; Cho, Seong-Ho; Hwang, Cheol Seong; Park, Tae Joo

    2014-01-01

    Highlights: • ALD Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. • Interface sulfur passivation was performed with wet processing using (NH 4 ) 2 S solution, and dry processing using post-deposition annealing under a H 2 S atmosphere. • Electrical properties of the device were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. • PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices. - Abstract: Atomic-layer-deposited Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH 4 ) 2 S) solution, and dry processing using post-deposition annealing (PDA) under a H 2 S atmosphere. The PDA under the H 2 S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH 4 ) 2 S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices

  7. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors

    Science.gov (United States)

    Fan, Ching-Lin; Shang, Ming-Chi; Wang, Shea-Jue; Hsia, Mao-Yuan; Lee, Win-Der; Huang, Bohr-Ran

    2017-01-01

    In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit) was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min) and low-power microwave-irradiation (50 W). PMID:28773101

  8. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol for the Gate Insulator of Pentacene-Based Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2017-07-01

    Full Text Available In this study, a proposed Microwave-Induction Heating (MIH scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO metal below the Poly(4-vinylphenol (PVP film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min and low-power microwave-irradiation (50 W.

  9. Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

    Science.gov (United States)

    Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

    The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

  10. Improving cyclic stability of lithium nickel manganese oxide cathode for high voltage lithium ion battery by modifying electrode/electrolyte interface with electrolyte additive

    International Nuclear Information System (INIS)

    Li, Bin; Wang, Yaqiong; Tu, Wenqiang; Wang, Zaisheng; Xu, Mengqing; Xing, Lidan; Li, Weishan

    2014-01-01

    Highlights: • Cyclic stability of LiNi 0.5 Mn 1.5 O 4 is improved significantly by using PES as additive. • A protective SEI is formed on LiNi 0.5 Mn 1.5 O 4 due to the preferential oxidation of PES. • The SEI suppresses electrolyte decomposition and structure destruction of LiNi 0.5 Mn 1.5 O 4 . - Abstract: We report a new approach to improve the cyclic stability of lithium nickel manganese oxide (LiNi 0.5 Mn 1.5 O 4 ) cathode, in which the cathode/electrolyte interface is modified by using prop-1-ene-1, 3-sultone (PES) as an electrolyte additive. The interfacial properties of LiNi 0.5 Mn 1.5 O 4 cathode in PES-containing electrolyte have been investigated by scanning electron spectroscopy (SEM), transmission electron microscopy (TEM), thermal gravimetry (TG), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), cyclic voltammometry (CV), chronoamperometry (CA), and constant current charge/discharge test. It is found that the application of PES improves significantly the cyclic stability of LiNi 0.5 Mn 1.5 O 4 . After 400 cycles at 1C rate (1C=147 mA g −1 ), the capacity retention of LiNi 0.5 Mn 1.5 O 4 is 90% for the cell using 1.0 wt% PES, while only 49% for the cell without the additive. The characterizations from SEM, TEM, TG, XRD, and XPS confirm that the LiNi 0.5 Mn 1.5 O 4 /electrolyte interface is modified and a protective solid electrolyte interface film is formed on LiNi 0.5 Mn 1.5 O 4 particles, which prevents LiNi 0.5 Mn 1.5 O 4 from destruction and suppresses the electrolyte decomposition

  11. Optoelectronics Interfaces for Power Converters

    Directory of Open Access Journals (Sweden)

    Ovidiu Neamtu

    2009-05-01

    Full Text Available The most important issue interface is galvanicseparation between the signal part and the power board.Standards in the field have increased continuouslyelectro-security requirements on the rigidity of thedielectric and insulation resistance. Recommendations forclassical solutions require the use of galvanic separationoptoelectronics devices. Interfacing with a PC or DSP -controller is a target of interposition optical signals viathe power hardware commands.

  12. The Formation Time of Ti-O• and Ti-O•-Ti Radicals at the n-SrTiO3/Aqueous Interface during Photocatalytic Water Oxidation.

    Science.gov (United States)

    Chen, Xihan; Choing, Stephanie N; Aschaffenburg, Daniel J; Pemmaraju, C D; Prendergast, David; Cuk, Tanja

    2017-02-08

    The initial step of photocatalytic water oxidation reaction at the metal oxide/aqueous interface involves intermediates formed by trapping photogenerated, valence band holes on different reactive sites of the oxide surface. In SrTiO 3, these one-electron intermediates are radicals located in Ti-O • (oxyl) and Ti-O • -Ti (bridge) groups arranged perpendicular and parallel to the surface respectively, and form electronic states in the band gap of SrTiO 3 . Using an ultrafast sub band gap probe of 400 nm and white light, we excited transitions between these radical states and the conduction band. By measuring the time evolution of surface reflectivity following the pump pulse of 266 nm light, we determined an initial radical formation time of 1.3 ± 0.2 ps, which is identical to the time to populate the surface with titanium oxyl (Ti-O • ) radicals. The oxyl was separately observed by a subsurface vibration near 800 cm -1 from Ti-O located in the plane right below Ti-O • . Second, a polarized transition optical dipole allows us to assign the 1.3 ps time constant to the production of both O-site radicals. After a 4.5 ps delay, another distinct surface species forms with a time constant of 36 ± 10 ps with a yet undetermined structure. As would be expected, the radicals' decay, specifically probed by the oxyl's subsurface vibration, parallels that of the photocurrent. Our results led us to propose a nonadiabatic kinetic mechanism for generating radicals of the type Ti-O • and Ti-O • -Ti from valence band holes based on their solvation at aqueous interfaces.

  13. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  14. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  15. Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces

    International Nuclear Information System (INIS)

    Schmeisser, D.; Zheng, F.; Perez-Dieste, V.; Himpsel, F.J.; LoNigro, R.; Toro, R.G.; Malandrino, G.; Fragala, I.L.

    2006-01-01

    The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr 2 O 3 /Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO 2 /Si(001) system as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces

  16. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  17. Negative compressibility at LaAlO{sub 3}/SrTiO{sub 3} interfaces explored with scanning force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Tinkl, Veronika; Breitschaft, Martin; Hammerl, German; Kopp, Thilo [Experimentalphysik VI, Zentrum fuer Elektronische Korrelationen und Magnetismus, Universitaet Augsburg, Augsburg (Germany); Richter, Christoph; Mannhart, Jochen [Experimentalphysik VI, Zentrum fuer Elektronische Korrelationen und Magnetismus, Universitaet Augsburg, Augsburg (Germany); Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

    2012-07-01

    The interface between the band insulators LaAlO{sub 3} and SrTiO{sub 3} is currently one of the most actively investigated structures in the field of oxide interfaces. If the LaAlO{sub 3}-film thickness exceeds three unit cells on a TiO{sub 2}-terminated SrTiO{sub 3} substrate a conducting layer is formed at the interface. This conducting layer can be driven insulating by electric fields. In this presentation we demonstrate that the interface exhibits negative compressibility as the carrier density is reduced. We investigated interfaces consisting of four unit cells LaAlO{sub 3} with a low temperature ultra-high vacuum scanning probe microscope. Contact potential difference measurements were performed at various carrier densities of the interface electron system. The difference in the work functions of interface and tip depends on the applied electric field. We show that the chemical potential at the interface increases with decreasing carrier density. This effect is caused by electron-electron interactions and corresponds to a negative compressibility. The negative compressibility gives rise to applications by, for example, making use of the resulting large enhancement of the capacitance.

  18. Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

    Science.gov (United States)

    Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

    2018-05-01

    This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

  19. A point defect model for the general and pitting corrosion on iron-oxide-electrolyte interface deduced from current oscillations

    CERN Document Server

    Pagitsas, M; Sazou, D

    2003-01-01

    Analysis of the passive-active oscillatory region of the Fe-0.75 M H sub 2 SO sub 4 system, perturbed by adding small amounts of halide species, allow the distinction between pitting and general corrosion. Complex periodic and aperiodic current oscillations characterize pitting corrosion whereas monoperiodic oscillations of a relaxation type indicate general corrosion. A point defect model (PDM) is considered for the microscopic description of the growth and breakdown of the iron oxide film. The physicochemical processes leading to different types of corrosion can be clarified in terms of the PDM. Occupation of an anion vacancy by a halide ion results in the localized attack of the passive oxide and pitting corrosion. On the other hand, the formation of surface soluble iron complexes is related to the uniform dissolution of the passive oxide and general corrosion.

  20. Properties of two-dimensional insulators: A DFT study of bimetallic oxide CrW{sub 2}O{sub 9} clusters adsorption on MgO ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Jia, E-mail: jia_zhu@jxnu.edu.cn [College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi 330022 (China); Zhang, Hui; Zhao, Ling; Xiong, Wei [College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi 330022 (China); Huang, Xin; Wang, Bin [Department of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108 (China); Zhang, Yongfan, E-mail: zhangyf@fzu.edu.cn [Department of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108 (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou, Fujian, 350002 (China)

    2016-08-30

    Highlights: • Completely different properties of CrW{sub 2}O{sub 9} on films compared with that on surface. • The first example of CT by electron tunneling from film to bimetallic oxide cluster. • A progressive Lewis acid site, better catalytic activities for adsorbed CrW{sub 2}O{sub 9}. - Abstract: Periodic density functional theory calculations have been performed to study the electronic properties of bimetallic oxide CrW{sub 2}O{sub 9} clusters adsorbed on MgO/Ag(001) ultrathin films (<1 nm). Our results show that after deposition completely different structures, electronic properties and chemical reactivity of dispersed CrW{sub 2}O{sub 9} clusters on ultrathin films are observed compared with that on the thick MgO surface. On the thick MgO(001) surface, adsorbed CrW{sub 2}O{sub 9} clusters are distorted significantly and just a little electron transfer occurs from oxide surface to clusters, which originates from the formation of adsorption dative bonds at interface. Whereas on the MgO/Ag(001) ultrathin films, the resulting CrW{sub 2}O{sub 9} clusters keep the cyclic structures and the geometries are similar to that of gas-phase [CrW{sub 2}O{sub 9}]{sup −}. Interestingly, we predicted the occurrence of a net transfer of one electron by direct electron tunneling from the MgO/Ag(001) films to CrW{sub 2}O{sub 9} clusters through the thin MgO dielectric barrier. Furthermore, our work reveals a progressive Lewis acid site where spin density preferentially localizes around the Cr atom not the W atoms for CrW{sub 2}O{sub 9}/MgO/Ag(001) system, indicating a potentially good bimetallic oxide for better catalytic activities with respect to that of pure W{sub 3}O{sub 9} clusters. As a consequence, present results reveal that the adsorption of bimetallic oxide CrW{sub 2}O{sub 9} clusters on the MgO/Ag(001) ultrathin films provide a new perspective to tune and modify the properties and chemical reactivity of bimetallic oxide adsorbates as a function of the thickness

  1. Reusable Surface Insulation

    Science.gov (United States)

    1997-01-01

    Advanced Flexible Reusable Surface Insulation, developed by Ames Research Center, protects the Space Shuttle from the searing heat that engulfs it on reentry into the Earth's atmosphere. Initially integrated into the Space Shuttle by Rockwell International, production was transferred to Hi-Temp Insulation Inc. in 1974. Over the years, Hi-Temp has created many new technologies to meet the requirements of the Space Shuttle program. This expertise is also used commercially, including insulation blankets to cover aircrafts parts, fire barrier material to protect aircraft engine cowlings and aircraft rescue fire fighter suits. A Fire Protection Division has also been established, offering the first suit designed exclusively by and for aircraft rescue fire fighters. Hi-Temp is a supplier to the Los Angeles City Fire Department as well as other major U.S. civil and military fire departments.

  2. CO oxidation on PtSn nanoparticle catalysts occurs at the interface of Pt and Sn oxide domains formed under reaction conditions

    KAUST Repository

    Michalak, William D.; Krier, James M.; Alayoglu, Selim; Shin, Jae-Yoon; An, Kwangjin; Komvopoulos, Kyriakos; Liu, Zhi; Somorjai, Gabor A.

    2014-01-01

    The barrier to CO oxidation on Pt catalysts is the strongly bound adsorbed CO, which inhibits O2 adsorption and hinders CO2 formation. Using reaction studies and in situ X-ray spectroscopy with colloidally prepared, monodisperse ∼2 nm Pt and PtSn

  3. Homogenization conditions affect the oxidative stability of fish oil enriched milk emulsions: Oxidation linked to changes in protein composition at the oil-water interface

    DEFF Research Database (Denmark)

    Sørensen, Ann-Dorit Moltke; Baron, Caroline; Bruni Let, Mette

    2007-01-01

    Fish oil was incorporated into milk under different homogenization temperatures (50 and 72 °C) and pressures (5, 15, and 22.5 MPa). Subsequently, the oxidative stability of the milk and changes in the protein composition of the milk fat globule membrane (MFGM) were examined. Results showed...

  4. Insulators for fusion applications

    International Nuclear Information System (INIS)

    1987-04-01

    Design studies for fusion devices and reactors have become more detailed in recent years and with this has come a better understanding of requirements and operating conditions for insulators in these machines. Ceramic and organic insulators are widely used for many components of fusion devices and reactors namely: radio frequency (RF) energy injection systems (BeO, Al 2 O 3 , Mg Al 2 O 4 , Si 3 N 4 ); electrical insulation for the torus structure (SiC, Al 2 O 3 , MgO, Mg Al 2 O 4 , Si 4 Al 2 O 2 N 6 , Si 3 N 4 , Y 2 O 3 ); lightly-shielded magnetic coils (MgO, MgAl 2 O 4 ); the toroidal field coil (epoxies, polyimides), neutron shield (B 4 C, TiH 2 ); high efficiency electrical generation; as well as the generation of very high temperatures for high efficiency hydrogen production processes (ZrO 2 and Al 2 O 3 - mat, graphite and carbon - felt). Timely development of insulators for fusion applications is clearly necessary. Those materials to be used in fusion machines should show high resistance to radiation damage and maintain their structural integrity. Now the need is urgent for a variety of radiation resistant materials, but much effort in these areas is required for insulators to be considered seriously by the design community. This document contains 14 papers from an IAEA meeting. It was the objective of this meeting to identify existing problems in analysing various situations of applications and requirements of electrical insulators and ceramics in fusion and to recommend strategies and different stages of implementation. This meeting was endorsed by the International Fusion Research Council

  5. Characteristics of high gradient insulators for accelerator and high power flow applications

    International Nuclear Information System (INIS)

    Elizondo, J.M.; Krogh, M.L.; Smith, D.

    1997-07-01

    The high gradient insulator has been demonstrated to operate at levels comparable or better than special geometry or coated insulators. Some patented insulator configurations allow for sophisticated accelerator structures, high power flow interfaces, and microwave applications not previously possible. Sophisticated manufacturing techniques available at AlliedSignal FM and T made this development possible. Bipolar and high power flow applications are specially suited for present insulator designs. The insulator shows a beneficial effect when used under RF fields or RF structures. These insulators can be designed, to a first approximation, from simple electron flight path equations. With a recently developed model of surface flashover physics the authors completed a set of design calculations that include effects such as layer density and dielectric/metal thickness. Experimental data, obtained in the last few years of development, is presented and reviewed. Several insulator fabrication characteristics, indicating critical design parameters, are also presented

  6. The Interface Structure of High-Temperature Oxidation-Resistant Aluminum-Based Coatings on Titanium Billet Surface

    Science.gov (United States)

    Xu, Zhefeng; Rong, Ju; Yu, Xiaohua; Kun, Meng; Zhan, Zhaolin; Wang, Xiao; Zhang, Yannan

    2017-10-01

    A new type of high-temperature oxidation-resistant aluminum-based coating, on a titanium billet surface, was fabricated by the cold spray method, at a high temperature of 1050°C, for 8 h, under atmospheric pressure. The microstructure of the exposed surface was analyzed via optical microscopy, the microstructure of the coating and elemental diffusion was analyzed via field emission scanning electron microscopy, and the interfacial phases were identified via x-ray diffraction. The Ti-Al binary phase diagram and Gibbs free energy of the stable phase were calculated by Thermo-calc. The results revealed that good oxidation resistant 50-μm-thick coatings were successfully obtained after 8 h at 1050°C. Two layers were obtained after the coating process: an Al2O3 oxidation layer and a TiAl3 transition layer on the Ti-based substrate. The large and brittle Al2O3 grains on the surface, which can be easily spalled off from the surface after thermal processing, protected the substrate against oxidation during processing. In addition, the thermodynamic calculation results were in good agreement with the experimental data.

  7. CO Adsorption and Oxidation at the Catalyst-Water Interface: An Investigation by Attenuated Total Reflection Infrared Spectroscopy.

    NARCIS (Netherlands)

    Ebbesen, S.D.; Mojet, Barbara; Lefferts, Leonardus

    2006-01-01

    Adsorption of carbon monoxide and oxidation of preadsorbed carbon monoxide from gas and aqueous phases were studied on a platinum catalyst deposited on a ZnSe internal reflection element (IRE) using attenuated total reflection infrared (ATR-IR) spectroscopy. The results of this study convincingly

  8. Determination of the bonding strength in solid oxide fuel cells’interfaces by Schwickerath crack initiation test

    Czech Academy of Sciences Publication Activity Database

    Boccaccini, D. N.; Ševeček, O.; Frandsen, L. H.; Dlouhý, Ivo; Molin, S.; Charlas, B.; Hjelm, J.; Cannio, M.; Hendriksen, P. V.

    2017-01-01

    Roč. 37, č. 11 (2017), s. 3565-3578 ISSN 0955-2219 Institutional support: RVO:68081723 Keywords : Schwickerath crack-initiation test * Three-point bending test * SOFC interfaces * Metal-ceramic bond strength Subject RIV: JI - Composite Materials OBOR OECD: Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics Impact factor: 3.411, year: 2016 https://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=3&SID=S1ftxS2ACYn8QwRNK3P&page=1&doc=1

  9. Electrical resistivity study of insulators

    International Nuclear Information System (INIS)

    Liesegang, J.; Senn, B.C.; Holcombe, S.R.; Pigram, P.J.

    1998-01-01

    Full text: Conventional methods of electrical resistivity measurement of dielectric materials involve the application of electrodes to a sample whereby a potential is applied and a current through the material is measured. Although great care and ingenuity has often been applied to this technique, the recorded values of electrical resistivity (p), especially for insulator materials, show great disparity. In earlier work by the authors, a method for determining surface charge decay [Q(t)], using a coaxial cylindrical capacitor arrangement interfaced to a personal computer, was adapted to allow the relatively straightforward measurement of electrical resistivity in the surface region of charged insulator materials. This method was used to develop an ionic charge transport theory, based on Mott-Gurney diffusion to allow a greater understanding into charge transport behaviour. This theory was extended using numerical analysis to produce a two dimensional (2-D) computational model to allow the direct comparison between experimental and theoretical charge decay data. The work also provided a means for the accurate determination of the diffusion coefficient (D) and the layer of thickness of surface charge (Δz) on the sample. The work outlined here involves an extension of the theoretical approach previously taken, using a computational model based more closely on the 3-D experimental set-up, to reinforce the level of confidence in the results achieved for the simpler 2-D treatment. Initially, a 3-D rectangular box arrangement similar to the experimental set-up was modelled and a theoretical and experimental comparison of voltage decay results made. This model was then transferred into cylindrical coordinates to allow it to be almost identical to the experiment and again a comparison made. In addition, theoretical analysis of the coupled non-linear partial differential equations governing the charge dissipation process has led to a simplification involving directly, the

  10. First-principles investigation of the electronic states at perovskite and pyrite hetero-interfaces

    KAUST Repository

    Nazir, Safdar

    2012-09-01

    Oxide heterostructures are attracting huge interest in recent years due to the special functionalities of quasi two-dimensional quantum gases. In this thesis, the electronic states at the interface between perovskite oxides and pyrite compounds have been studied by first-principles calculations based on density functional theory. Optimization of the atomic positions are taken into account, which is considered very important at interfaces, as observed in the case of LaAlO3/SrTiO3. The creation of metallic states at the interfaces thus is explained in terms of charge transfer between the transition metal and oxygen atoms near the interface. It is observed that with typical thicknesses of at least 10-12 °A the gases still extend considerably in the third dimension, which essentially determines the magnitude of quantum mechanical effects. To overcome this problem, we propose incorporation of highly electronegative cations (such as Ag) in the oxides. A fundamental interest is also the thermodynamic stability of the interfaces due to the possibility of atomic intermixing in the interface region. Therefore, different cation intermixed configurations are taken into account for the interfaces aiming at the energetically stable state. The effect of O vacancies is also discussed for both polar and non-polar heterostructures. The interface metallicity is enhanced for the polar system with the creation of O vacancies, while the clean interface at the non-polar heterostructure exhibits an insulating state and becomes metallic in presence of O vacancy. The O vacancy formation energies are calculated and explained in terms of the increasing electronegativity and effective volume of A the side cation. Along with these, the electronic and magnetic properties of an interface between the ferromagnetic metal CoS2 and the non-magnetic semiconductor FeS2 is investigated. We find that this contact shows a metallic character. The CoS2 stays quasi half metallic at the interface, while the

  11. Experimental demonstration of anomalous Floquet topological insulator for sound

    Science.gov (United States)

    Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng

    2016-11-01

    Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states.

  12. Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    Modulation-doped oxide two-dimensional electron gas formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x = 0, 1/8, ...... of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3....

  13. Insulation coordination workstation for AC and DC substations

    International Nuclear Information System (INIS)

    Booth, R.R.; Hileman, A.R.

    1990-01-01

    The Insulation Coordination Workstation was designed to aid the substation design engineer in the insulation coordination process. The workstation utilizes state of the art computer technology to present a set of tools necessary for substation insulation coordination, and to support the decision making process for all aspects of insulation coordination. The workstation is currently being developed for personal computers supporting OS/2 Presentation Manager. Modern Computer-Aided Software Engineering (CASE) technology was utilized to create an easily expandable framework which currently consists of four modules, each accessing a central application database. The heart of the workstation is a library of user-friendly application programs for the calculation of important voltage stresses used for the evaluation of insulation coordination. The Oneline Diagram is a graphic interface for data entry into the EPRI distributed EMTP program, which allows the creation of complex systems on the CRT screen using simple mouse clicks and keyboard entries. Station shielding is graphically represented in the Geographic Viewport using a three-dimensional substation model, and the interactive plotting package allows plotting of EPRI EMTP output results on the CRT screen, printer, or pen plotter. The Insulation Coordination Workstation was designed by Advanced Systems Technology (AST), a division of ABB Power Systems, Inc., and sponsored by the Electric Power Research Institute under RP 2323-5, AC/DC Insulation Coordination Workstation

  14. A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

    International Nuclear Information System (INIS)

    Annamalai, N.K.; Bockman, J.F.; McGruer, N.E.; Chapski, J.

    1990-01-01

    The current through the buried oxides of single and multiple implant SIMOX and bond and etch back silicon-on-insulator (BESOI) wafers were measured as a function of radiation dose. From these measurements, conductivity and static capacitances were derived. High frequency capacitances were also measured. Leakage current through the buried oxide of multiple implant SIMOX is considerably less than that of single implant SIMOX (more than an order of magnitude). High frequency and static capacitances, as a function of total dose, were used to study the buried oxide---top silicon interface and the buried oxide---bottom silicon interface. Multiple implant had fewer interface traps than single implant at pre-rad and after irradiation

  15. Insulation Reformulation Development

    Science.gov (United States)

    Chapman, Cynthia; Bray, Mark

    2015-01-01

    The current Space Launch System (SLS) internal solid rocket motor insulation, polybenzimidazole acrylonitrile butadiene rubber (PBI-NBR), is a new insulation that replaced asbestos-based insulations found in Space Shuttle heritage solid rocket boosters. PBI-NBR has some outstanding characteristics such as an excellent thermal erosion resistance, low thermal conductivity, and low density. PBI-NBR also has some significant challenges associated with its use: Air entrainment/entrapment during manufacture and lay-up/cure and low mechanical properties such as tensile strength, modulus, and fracture toughness. This technology development attempted to overcome these challenges by testing various reformulated versions of booster insulation. The results suggest the SLS program should continue to investigate material alternatives for potential block upgrades or use an entirely new, more advanced booster. The experimental design was composed of a logic path that performs iterative formulation and testing in order to maximize the effort. A lab mixing baseline was developed and documented for the Rubber Laboratory in Bldg. 4602/Room 1178.

  16. Beyond insulation and isolation

    DEFF Research Database (Denmark)

    Højlund, Marie Koldkjær

    2016-01-01

    are insulation and isolation strategies to reduce measurable and perceptual noise levels. However, these strategies do not actively support the need to feel like an integral part of the shared hospital environment, which is a key element in creating healing environments, according to the paradigm of Evidence-Based...

  17. Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

    NARCIS (Netherlands)

    Landheer, K.; Bronsveld, P.C.P.; Poulios, I.; Tichelaar, F.D.; Kaiser, M.; Schropp, R.E.I.; Rath, J.K.

    2017-01-01

    An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the

  18. Dark current of organic heterostructure devices with insulating spacer layers

    Science.gov (United States)

    Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

    2015-03-01

    The dark current density at fixed voltage bias in donor/acceptor organic planar heterostructure devices can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of an interfacial exciplex state. If the exciplex formation rate limits current flow, the insulating interface layer can increase dark current whereas, if the exciplex recombination rate limits current flow, the insulating interface layer decreases dark current. We present a device model to describe this behavior and illustrate it experimentally for various donor/acceptor systems, e.g. P3HT/LiF/C60.

  19. Self-Healing Wire Insulation

    Science.gov (United States)

    Parrish, Clyde F. (Inventor)

    2012-01-01

    A self-healing system for an insulation material initiates a self-repair process by rupturing a plurality of microcapsules disposed on the insulation material. When the plurality of microcapsules are ruptured, reactants within the plurality of microcapsules react to form a replacement polymer in a break of the insulation material. This self-healing system has the ability to repair multiple breaks in a length of insulation material without exhausting the repair properties of the material.

  20. Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

    Science.gov (United States)

    Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

    2018-06-01

    Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

  1. Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

    Science.gov (United States)

    Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

    2015-12-09

    The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

  2. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

    Science.gov (United States)

    Mahato, Somnath; Puigdollers, Joaquim

    2018-02-01

    Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

  3. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    International Nuclear Information System (INIS)

    Mohapatra, S K; Pradhan, K P; Sahu, P K; Pati, G S; Kumar, M R

    2014-01-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™. (paper)

  4. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    Science.gov (United States)

    Mohapatra, S. K.; Pradhan, K. P.; Sahu, P. K.; Pati, G. S.; Kumar, M. R.

    2014-12-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™.

  5. Integrated Multilayer Insulation

    Science.gov (United States)

    Dye, Scott

    2009-01-01

    Integrated multilayer insulation (IMLI) is being developed as an improved alternative to conventional multilayer insulation (MLI), which is more than 50 years old. A typical conventional MLI blanket comprises between 10 and 120 metallized polymer films separated by polyester nets. MLI is the best thermal- insulation material for use in a vacuum, and is the insulation material of choice for spacecraft and cryogenic systems. However, conventional MLI has several disadvantages: It is difficult or impossible to maintain the desired value of gap distance between the film layers (and consequently, it is difficult or impossible to ensure consistent performance), and fabrication and installation are labor-intensive and difficult. The development of IMLI is intended to overcome these disadvantages to some extent and to offer some additional advantages over conventional MLI. The main difference between IMLI and conventional MLI lies in the method of maintaining the gaps between the film layers. In IMLI, the film layers are separated by what its developers call a micro-molded discrete matrix, which can be loosely characterized as consisting of arrays of highly engineered, small, lightweight, polymer (typically, thermoplastic) frames attached to, and placed between, the film layers. The term "micro-molded" refers to both the smallness of the frames and the fact that they are fabricated in a process that forms precise small features, described below, that are essential to attainment of the desired properties. The term "discrete" refers to the nature of the matrix as consisting of separate frames, in contradistinction to a unitary frame spanning entire volume of an insulation blanket.

  6. Observation of the Spin Peltier Effect for Magnetic Insulators

    NARCIS (Netherlands)

    Flipse, J.; Dejene, F.K.; Wagenaar, D.; Bauer, G.E.W.; Ben Youssef, J.; Van Wees, B.J.

    2014-01-01

    We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin

  7. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  8. Characterization of the interface between an Fe–Cr alloy and the p-type thermoelectric oxide Ca{sub 3}Co{sub 4}O{sub 9}

    Energy Technology Data Exchange (ETDEWEB)

    Holgate, Tim C., E-mail: timholgate@hotmail.com [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark); Han, Li; Wu, NingYu [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark); Bøjesen, Espen D.; Christensen, Mogens; Iversen, Bo B. [Centre for Materials Crystallography, Department of Chemistry and iNANO, Aarhus University, 8000 Aarhus C (Denmark); Nong, Ngo Van; Pryds, Nini [Dept. of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Frederiksborgvej 399, Building 779, 4000 Roskilde (Denmark)

    2014-01-05

    Highlights: • The competitive thermoelectric oxide Ca{sub 3}Co{sub 4}O{sub 9} and a custom Fe–Cr alloy were interfaced using spark plasma sintering. • Compared to similarly contacted Ni/Ca{sub 3}Co{sub 4}O{sub 9} interfaces, the high-temperature stability and electrical contact resistance were improved. • The successes and issues associated with this interfacing technique and the materials involved are discussed. -- Abstract: A customized Fe–Cr alloy that has been optimized for high temperature applications in oxidizing atmospheres has been interfaced via spark plasma sintering (SPS) with a p-type thermoelectric oxide material: calcium cobaltate (Ca{sub 3}Co{sub 4}O{sub 9}). The properties of the alloy have been analyzed for its compatibility with the Ca{sub 3}Co{sub 4}O{sub 9} in terms of its thermal expansion and transport properties. The thermal and electrical contact resistances have been measured as a function of temperature, and the long term electronic integrity of the interface analyzed by measuring the resistance vs. time at an elevated temperature. The kinetics of the interface have been analyzed through imaging with scanning electron microscopy (SEM), elemental analysis using energy dispersive spectroscopy (EDS), and phase identification with X-ray diffraction (XRD). The results reveal the formation of an intermediate phase containing calcium and chromium in the interface that is highly resistive at room temperature, but conducting at the intended thermoelectric device hot-side operating temperature of 800 °C. As the alloy is well matched in terms of its thermal expansion and highly conducting compared to the Ca{sub 3}Co{sub 4}O{sub 9}, it may be further considered as an interconnect material candidate at least with application on the hot-side of an oxide thermoelectric power generation module.

  9. Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

    Science.gov (United States)

    Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

    2018-04-01

    We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

  10. Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

    KAUST Repository

    Li, Jingrui

    2015-07-29

    The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

  11. Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

    KAUST Repository

    Li, Jingrui; Li, Hong; Winget, Paul; Bredas, Jean-Luc

    2015-01-01

    The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

  12. Mapping the Binding Interface of VEGF and a Monoclonal Antibody Fab-1 Fragment with Fast Photochemical Oxidation of Proteins (FPOP) and Mass Spectrometry

    Science.gov (United States)

    Zhang, Ying; Wecksler, Aaron T.; Molina, Patricia; Deperalta, Galahad; Gross, Michael L.

    2017-05-01

    We previously analyzed the Fab-1:VEGF (vascular endothelial growth factor) system described in this work, with both native top-down mass spectrometry and bottom-up mass spectrometry (carboxyl-group or GEE footprinting) techniques. This work continues bottom-up mass spectrometry analysis using a fast photochemical oxidation of proteins (FPOP) platform to map the solution binding interface of VEGF and a fragment antigen binding region of an antibody (Fab-1). In this study, we use FPOP to compare the changes in solvent accessibility by quantitating the extent of oxidative modification in the unbound versus bound states. Determining the changes in solvent accessibility enables the inference of the protein binding sites (epitope and paratopes) and a comparison to the previously published Fab-1:VEGF crystal structure, adding to the top-down and bottom-up data. Using this method, we investigated peptide-level and residue-level changes in solvent accessibility between the unbound proteins and bound complex. Mapping these data onto the Fab-1:VEGF crystal structure enabled successful characterization of both the binding region and regions of remote conformation changes. These data, coupled with our previous higher order structure (HOS) studies, demonstrate the value of a comprehensive toolbox of methods for identifying the putative epitopes and paratopes for biotherapeutic antibodies.

  13. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

    2012-01-01

    Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

  14. Controlled deposition of functionalized silica coated zinc oxide nano-assemblies at the air/water interface for blood cancer detection

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Chandra Mouli [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Nanobioelectronics Laboratory, Department of Biotechnology, Delhi Technological University, Delhi 110042 (India); Dewan, Srishti [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Biomedical Engineering Department, Deenbandhu Chhotu Ram University of Science & Technology, Haryana 131039 (India); Chawla, Seema [Biomedical Engineering Department, Deenbandhu Chhotu Ram University of Science & Technology, Haryana 131039 (India); Yadav, Birendra Kumar [Rajiv Gandhi Cancer Institute and Research Centre, Rohini, Delhi 110085 (India); Sumana, Gajjala, E-mail: sumanagajjala@gmail.com [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Malhotra, Bansi Dhar, E-mail: bansi.malhotra@gmail.com [Biomedical Instrumentation Section, CSIR-National Physical Laboratory, New Delhi 110012 (India); Nanobioelectronics Laboratory, Department of Biotechnology, Delhi Technological University, Delhi 110042 (India)

    2016-09-21

    We report results of the studies relating to controlled deposition of the amino-functionalized silica-coated zinc oxide (Am-Si@ZnO) nano-assemblies onto an indium tin oxide (ITO) coated glass substrate using Langmuir-Blodgett (LB) technique. The monolayers have been deposited by transferring the spread solution of Am-Si@ZnO stearic acid prepared in chloroform at the air-water interface, at optimized pressure (16 mN/m), concentration (10 mg/ml) and temperature (23 °C). The high-resolution transmission electron microscopic studies of the Am-Si@ZnO nanocomposite reveal that the nanoparticles have a microscopic structure comprising of hexagonal assemblies of ZnO with typical dimensions of 30 nm. The surface morphology of the LB multilayer observed by scanning electron microscopy shows uniform surface of the Am-Si@ZnO film in the nanometer range (<80 nm). These electrodes have been utilized for chronic myelogenous leukemia (CML) detection by covalently immobilizing the amino-terminated oligonucleotide probe sequence via glutaraldehyde as a crosslinker. The response studies of these fabricated electrodes carried out using electrochemical impedance spectroscopy show that this Am-Si@ZnO LB film based nucleic acid sensor exhibits a linear response to complementary DNA (10{sup −6}–10{sup −16} M) with a detection limit of 1 × 10{sup −16} M. This fabricated platform is validated with clinical samples of CML positive patients and the results demonstrate its immense potential for clinical diagnosis. - Graphical abstract: Controlled deposition of functionalized silica coated zinc oxide nano-assemblies at the air/water interface for label free electrochemical detection of chronic myelogenous leukemia. - Highlights: • Stable and controlled deposition of Am-Si@ZnO nano-assemblies using LB technique. • Uniform monolayer deposition of the Am-Si@ZnO LB film within the nanometer range. • Am-Si@ZnO LB film shows enhanced electrochemical properties. • Fabricated

  15. Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

    Science.gov (United States)

    Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

    2016-04-01

    The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

  16. Creating Two-Dimensional Electron Gas in Nonpolar/Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure.

    Science.gov (United States)

    Nazir, Safdar; Cheng, Jianli; Yang, Kesong

    2016-01-13

    We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO HS-based slab systems, i.e., TiO2/CaO and SrO/ZrO2 interface models with CaO and ZrO2 surface terminations in each model separately, we found that the lattice-mismatch-induced compressive strain leads to a strong polarization in the CZO film and that as the CZO film thickness increases there exists an insulator-to-metal transition. The polarization direction and critical thickness of the CZO film for forming interfacial metallic states depend on the surface termination of CZO film in both types of interface models. In the TiO2/CaO and SrO/ZrO2 interface models with CaO surface termination, the strong polarization drives the charge transfer from the CZO film to the first few TiO2 layers in the STO substrate, leading to the formation of two-dimensional electron gas (2DEG) at the interface. In the HS models with ZrO2 surface termination, two polarization domains with opposite directions are in the CZO film, which results in the charge transfer from the middle CZO layer to the interface and surface, respectively, leading to the coexistence of the 2DEG on the interface and the two-dimensional hole gas (2DHG) at the middle CZO layer. These findings open a new avenue to achieve 2DEG (2DHG) in perovskite-based HS systems via polarization discontinuity.

  17. Heat insulating plates

    Energy Technology Data Exchange (ETDEWEB)

    Allan, J.A.F.

    1976-10-28

    Micro-porous insulation plates are dealt with, for example, how they are used in the insulation of heat storage devices. Since one side of such plates is exposed to a temperature of over 700/sup 0/C, a shrinkage of the glass texture of the covering can occur, which can exceed the shrinkage of the inner micro-porous material, so that cracks and splits in the high temperature side of the covering can come about. The task of the invention is to design the plate in such a way as to prevent this from happening. For this purpose the plate is provided, according to invention specifications, with flutes, waves, ribs, waffle or grid patterns and the covering is set into the recesses originating from this.

  18. Green insulation: hemp fibers

    Energy Technology Data Exchange (ETDEWEB)

    Anon,

    2011-09-15

    Indian hemp (Cannabis indica) is known for its psychotropic values and it is banned in most countries. However, industrial hemp (Cannabis sativa) is known for its tough fibers. Several manufactures in Europe including, small niche players, have been marketing hemp insulation products for several years. Hemp is a low environmental impact material. Neither herbicide nor pesticide is used during the growth of hemp. The fibers are extracted in a waste-free and chemical-free mechanical process. Hemp can consume CO2 during its growth. In addition, hemp fiber can be disposed of harmlessly by composting or incineration at the end of its life. Hemp fibers are processed and treated only minimally to resist rot and fungal activity. There is little health risk when producing and installing the insulation, thanks to the absence of toxic additive. Its thermal resistance is comparable to mineral wool. But the development and marketing of hemp fibers may be restricted in North America.

  19. Super-insulation

    International Nuclear Information System (INIS)

    Gerold, J.

    1985-01-01

    The invention concerns super-insulation, which also acts as spacing between two pressurized surfaces, where the crossing bars in at least two layers are provided, with interposed foil. The super-insulation is designed so that it can take compression forces and limits thermal radiation and thermal conduction sufficiently, where the total density of heat flow is usually limited to a few watts per m 2 . The solution to the problem is characterized by the fact that the bars per layer are parallel and from layer to layer they are at an angle to each other and the crossover positions of the bars of different layers are at fixed places and so form contact columns. The basic idea is that bars crossing over each other to support compression forces are used so that contact columns are formed, which are compressed to a certain extent by the load. (orig./PW) [de

  20. Compact vacuum insulation embodiments

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1992-04-28

    An ultra-thin compact vacuum insulation panel is comprised of two hard, but bendable metal wall sheets closely spaced apart from each other and welded around the edges to enclose a vacuum chamber. Glass or ceramic spacers hold the wall sheets apart. The spacers can be discrete spherical beads or monolithic sheets of glass or ceramic webs with nodules protruding therefrom to form essentially point' or line' contacts with the metal wall sheets. In the case of monolithic spacers that form line' contacts, two such spacers with the line contacts running perpendicular to each other form effectively point' contacts at the intersections. Corrugations accommodate bending and expansion, tubular insulated pipes and conduits, and preferred applications are also included. 26 figs.

  1. Compact vacuum insulation

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1993-01-05

    An ultra-thin compact vacuum insulation panel is comprised of two hard, but bendable metal wall sheets closely spaced apart from each other and welded around the edges to enclose a vacuum chamber. Glass or ceramic spacers hold the wall sheets apart. The spacers can be discrete spherical beads or monolithic sheets of glass or ceramic webs with nodules protruding therefrom to form essentially point'' or line'' contacts with the metal wall sheets. In the case of monolithic spacers that form line'' contacts, two such spacers with the line contacts running perpendicular to each other form effectively point'' contacts at the intersections. Corrugations accommodate bending and expansion, tubular insulated pipes and conduits, and preferred applications are also included.

  2. Super insulating aerogel glazing

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe; Jensen, Karsten Ingerslev; Kristiansen, Finn Harken

    2004-01-01

    form the weakest part of the thermal envelope with respect to heat loss coefficient, but on the other hand also play an important role for passive solar energy utilisation. For window orientations other than south, the net energy balance will be close to or below zero. However, the properties......Monolithic silica aerogel offers the possibility of combining super insulation and high solar energy transmittance, which has been the background for a previous and a current EU project on research and development of monolithic silica aerogel as transparent insulation in windows. Generally, windows...... of aerogel glazing will allow for a positive net energy gain even for north facing vertical windows in a Danish climate during the heating season. This means that high quality daylight can be obtained even with additional energy gain. On behalf of the partners of the two EU projects, results related...

  3. Insulated pipe clamp design

    International Nuclear Information System (INIS)

    Anderson, M.J.; Hyde, L.L.; Wagner, S.E.; Severud, L.K.

    1980-01-01

    Thin wall large diameter piping for breeder reactor plants can be subjected to significant thermal shocks during reactor scrams and other upset events. On the Fast Flux Test Facility, the addition of thick clamps directly on the piping was undesired because the differential metal temperatures between the pipe wall and the clamp could have significantly reduced the pipe thermal fatigue life cycle capabilities. Accordingly, an insulated pipe clamp design concept was developed. The design considerations and methods along with the development tests are presented. Special considerations to guard against adverse cracking of the insulation material, to maintain the clamp-pipe stiffness desired during a seismic event, to minimize clamp restraint on the pipe during normal pipe heatup, and to resist clamp rotation or spinning on the pipe are emphasized

  4. Kinetic Interface

    DEFF Research Database (Denmark)

    2009-01-01

    A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises.......A kinetic interface for orientation detection in a video training system is disclosed. The interface includes a balance platform instrumented with inertial motion sensors. The interface engages a participant's sense of balance in training exercises....

  5. Improved Cycling Stability of Cobalt-free Li-rich Oxides with a Stable Interface by Dual Doping

    International Nuclear Information System (INIS)

    Xie, Dongjiu; Li, Guangshe; Li, Qi; Fu, Chaochao; Fan, Jianming; Li, Liping

    2016-01-01

    Highlights: • Cobalt-free Na_xLi_1_._2_-_xMn_0_._6_-_xAl_xNi_0_._2O_2 oxides are prepared by a sol-gel method. • Dual-doping strengthens the covalence of Mn-O bonds and suppresses the side reactions between cathode and electrolyte. • Doped cathode has a capacity retention over 92.2% after 100 cycles at a high temperature of 55 °C. - Abstract: Li-rich cobalt-free oxides, popularly used as a cathode with high capacity in lithium ion battery, always suffer from poor cycling stability between 2.0 and 4.8 V vs Li"+/Li, especially when cycled at high temperatures (>50 °C). To overcome this issue, Na"+ and Al"3"+ dual-doped Na_xLi_1_._2_-_xMn_0_._6_-_xAl_xNi_0_._2O_2 Li-rich cathode is prepared in this study. It is shown that the side reactions between cathode and electrolyte during cycling are suppressed. The improved cycling performance is observed for all of the doped samples, among which the sample with x = 0.03 exhibits the highest capacity retention of 86.1% after 200 cycles between 2.0 and 4.8 V at 2C (1C = 200 mA g"−"1) and shows a remarkable cycling stability, even at a high temperature of 55 °C (a capacity retention of 92.2% after 100 cycles). Moreover, the average voltage of the sample with x = 0.03 after 100 cycles at 0.5C remains at 3.11 V with a retention ratio of 86.6%. This work provides a new strategy to develop Li-rich cobalt-free cathodes with excellent cycling stability for lithium ion batteries at high temperatures.

  6. Insulated pipe clamp design

    International Nuclear Information System (INIS)

    Anderson, M.J.; Hyde, L.L.; Wagner, S.E.; Severud, L.K.

    1980-01-01

    Thin wall large diameter piping for breeder reactor plants can be subjected to significant thermal shocks during reactor scrams and other upset events. On the Fast Flux Test Facility, the addition of thick clamps directly on the piping was undesired because the differential metal temperatures between the pipe wall and the clamp could have significantly reduced the pipe thermal fatigue life cycle capabilities. Accordingly, an insulated pipe clamp design concept was developed. 5 refs

  7. Pourable Foam Insulation

    Science.gov (United States)

    Harvey, James A.; Butler, John M.; Chartoff, Richard P.

    1989-01-01

    Report describes search for polyisocyanurate/polyurethane foam insulation with superior characteristics. Discusses chemistry of current formulations. Tests of formulations, of individual ingredients and or alternative new formulations described. Search revealed commercially available formulations exhibiting increased thermal stability at temperatures up to 600 degree C, pours readily before curing, presents good appearance after curing, and remains securely bonded to aluminum at cryogenic temperatures. Total of 42 different formulations investigated, 10 found to meet requirements.

  8. Surface electrical resistivity of insulators

    International Nuclear Information System (INIS)

    Senn, B. C.; Liesegang, J.

    1996-01-01

    A method is presented here for measuring surface charge decay, and theory has been developed so as to produce determinations of resistivity in the surface region of insulator films or wafers. This method incorporates the use of a coaxial cylindrical capacitor arrangement and an electrometer interfaced to a PC. The charge transport theory given here is based on Mott-Gurney diffusion, and allows easy interpretation of the experimental data, especially for the initial phase of surface charge decay. Resistivity measurements are presented for glass, mica, perspex and polyethylene, covering a range of 10 9 to 10 18 Ωm, as an illustration of the useful range of the instrument for static and antistatic materials, particularly in film or sheet form. Values for the surface charge diffusion constants of the materials are also presented. The charge transport theory has also been extended to allow the experimental and computational theoretical comparison of surface charge decay not only over the initial phase of charge decay, but also over longer times. The theoretical predictions show excellent agreement with experiment using the values for the diffusion constants referred to above

  9. Irradiation effects on organic insulators

    International Nuclear Information System (INIS)

    Kasen, M.B.

    1986-01-01

    The overall objective of this work is to contribute to development of organic insulators having the cryogenic neutron irradiation resistance required for MFE systems utilizing superconducting magnet confinement. The system for producing standard 3.2-mm (0.125-in) diameter rod specimens discussed in previous reports has been further refined to permit the fabrication of both fiber-reinforced and heat-resin specimens from hot-melt resin systems. The method has been successfully used to produce very high quality specimens duplicating the G-11CR system and specimens from a variant of that system eliminating a boron-containing additive. We have also produced specimens from an epoxy system suitable for impregnation or potting operations and from a bismaleimide polyimide system. These materials will be used in the first irradiation program in the National Low Temperature Neutron Irradiation Facility (NLTNIF) reactor at Oak Ridge. We have refined the 4-K torsional shear test method for evaluating radiation degradation of the fiber-matrix interface and have developed a method of quantitatively measuring changes in fracture energy as a function of radiation dose. Cooperative work with laboratories in Japan and England in this area is continuing and plans are being formulated for joint production, irradiation, and testing of specimens

  10. Individual Magnetic Molecules on Ultrathin Insulating Surfaces

    Science.gov (United States)

    El Hallak, Fadi; Warner, Ben; Hirjibehedin, Cyrus

    2012-02-01

    Single molecule magnets have attracted ample interest because of their exciting magnetic and quantum properties. Recent studies have demonstrated that some of these molecules can be evaporated on surfaces without losing their magnetic properties [M. Mannini et al., Nature 468, 417, (2010)]. This remarkable progress enhances the chances of real world applications for these molecules. We present STM imaging and spectroscopy data on iron phthalocyanine molecules deposited on Cu(100) and on a Cu2N ultrathin insulating surface. These molecules have been shown to display a large magnetic anisotropy on another thin insulating surface, oxidized Cu(110) [N. Tsukahara et al., Phys. Rev. Lett. 102, 167203 (2009)]. By using a combination of elastic and inelastic electron tunnelling spectroscopy, we investigate the binding of the molecules to the surface and the impact that the surface has on their electronic and magnetic properties.

  11. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  12. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    International Nuclear Information System (INIS)

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-01-01

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm 2 /V s to 17.9 cm 2 /V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO 2 . Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm −3 to 5.83 g cm −3 (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability

  13. Building ceramics with improved thermal insulation parameters

    Directory of Open Access Journals (Sweden)

    Rzepa Karol

    2016-01-01

    Full Text Available One of the most important performance characteristics of masonry units is their high thermal insulation. There are many different ways to improve this parameter, however the most popular methods in case of ceramic masonry units are: addition of pore-creating raw materials and application of proper hole pattern. This study was an attempt to improve thermal insulation of ceramics by applying thermal insulation additives. Perlite dust created as a subgrain from expansion of perlite rock was used. Perlite subgrain is not very popular among consumers, that’s why it’s subjected to granulation to obtain coarse grain. The authors presented concept of direct application of perlite dust for the production of building ceramics with improved thermal insulation. Fineness of this additive is asset for molding of ceramic materials from plastic masses. Based on the results it was found that about 70% perlite by volume can be added to obtain material with a coefficient of heat conductivity of 0,37 W/mK. Higher content of this additive in ceramic mass causes deterioration of its rheological properties. Mass loses its plasticity, it tears up and formed green bodies are susceptible to deformation. During sintering perlite takes an active part in compaction process. Higher sintering dynamics is caused by: high content of alkali oxides in perlite and glass nature of perlite. Alkali oxides generate creation of liquid phase which intensifies mass compaction processes. Active role of perlite in sintering process causes good connection of its grains with clay groundwork which is important factor for mechanical parameters of ceramic materials. It was also noted that addition of perlite above 40% by volume of mass effectively neutralized negative effect of efflorescence in ceramic materials.

  14. Mapping the surface (hydr)oxo-groups of titanium oxide and its interface with an aqueous solution: the state of the art and a new approach.

    Science.gov (United States)

    Panagiotou, George D; Petsi, Theano; Bourikas, Kyriakos; Garoufalis, Christos S; Tsevis, Athanassios; Spanos, Nikos; Kordulis, Christos; Lycourghiotis, Alexis

    2008-10-01

    In this article the "titanium oxide/electrolyte solution" interface is studied by taking in advantage the recent developments in the field of Surface and Interface Chemistry relevant to this oxide. Ab-initio calculations were performed in the frame of the DFT theory for estimating the charge of the titanium and oxygen atoms exposed on the anatase (1 0 1), (1 0 0), (0 0 1), (1 0 3)(f) and rutile (1 1 0) crystal faces. These orientations have smaller surface energy with respect to other ones and thus it is more probable to be the real terminations of the anatase and rutile nanocrystallites in the titania polycrystalline powders. Potentiometric titrations for obtaining "fine structured" titration curves as well as microelectrophoresis and streaming potential measurements have been performed. On the basis of ab-initio calculations, and taking into account the relative contribution of each crystal face to the whole surface of the nanocrystals involved in the titania aggregates of a suspension, the three most probable surface ionization models have been derived. These models and the Music model are then tested in conjunction with the "Stern-Gouy-Chapman" and "Basic Stern" electrostatic models. The finally selected surface ionization model (model A) in combination with each one of the two electrostatic models describes very well the protonation/deprotonation behavior of titania. The description is also very good if this model is combined with the Three Plane (TP) model. The application of the "A/(TP)" model allowed mapping the surface (hydr)oxo-groups [TiO(H) and Ti(2)O(H)] of titania exposed in aqueous solutions. At pH>pzc almost all terminal oxygens [TiO] are non-protonated whereas even at low pH values the non-protonated terminal oxygens predominate. The acid-base behavior of the bridging oxygens [Ti(2)O] is different. Thus, even at pH=10 the greater portion of them is protonated. The application of the "A/TP" model in conjunction with potentiometric titrations

  15. Thermal-performance study of liquid metal fast breeder reactor insulation

    International Nuclear Information System (INIS)

    Shiu, K.K.

    1980-09-01

    Three types of metallic thermal insulation were investigated analytically and experimentally: multilayer reflective plates, multilayer honeycomb composite, and multilayer screens. Each type was subjected to evacuated and nonevacuated conditions, where thermal measurements were made to determine thermal-physical characteristics. A variation of the separation distance between adjacent reflective plates of multilayer reflective plates and multilayer screen insulation was also experimentally studied to reveal its significance. One configuration of the multilayer screen insulation was further selected to be examined in sodium and sodium oxide environments. The emissivity of Type 304 stainless steel used in comprising the insulation was measured by employing infrared technology. A comprehensive model was developed to describe the different proposed types of thermal insulation. Various modes of heat transfer inherent in each type of insulation were addressed and their relative importance compared. Provision was also made in the model to allow accurate simulation of possible sodium and sodium oxide contamination of the insulation. The thermal-radiation contribution to heat transfer in the temperature range of interest for LMFBR's was found to be moderate, and the suppression of natural convection within the insulation was vital in preserving its insulating properties. Experimental data were compared with the model and other published results. Moreover, the three proposed test samples were assessed and compared under various conditions as viable LMFBR thermal insulations

  16. Evolution of the nickel/zirconia interface

    International Nuclear Information System (INIS)

    Shinde, S.L.; Olson, D.A.; De Jonghe, L.C.; Miller, R.A.

    1986-01-01

    The changes taking place at the nickel zirconia interface during oxidation in air at 900 0 C were studied using analytical electron microscopy (AEM). The nickel oxide layer growing at the interface and the stabilizers used in zirconia interact, giving different interface morphologies

  17. Metal-Anion Pairing at Oxide/Water Interfaces: Theoretical and Experimental Investigations from the Nanoscale to the Macroscale

    Energy Technology Data Exchange (ETDEWEB)

    Allen, Heather [The Ohio State Univ., Columbus, OH (United States)

    2016-11-14

    We combine the use of several techniques including bulk adsorption experiments, X-ray absorption, infrared, total internal reflection Raman, and vibrational sum frequencygeneration (XAS, IR, TIR-Raman, VSFG) spectroscopies, and molecular modeling to investigate ion adsorption at mineral surfaces. XAS and TIR-Raman provides data on how the metal binds to the surface (e.g., monodentate, bidentate), IR provides data on bulk anion adsorption at mineral surfaces from aqueous solutions, and VSFG provides surface specific data on anion adsorption at the mineral surface as well as impact of adsorbed metal-anion pairs on water structure at the mineral surface. Molecular modeling is used to guide spectroscopic data interpretation by providing information on water structure around ions in solution and the structure of metal-anion complexes in aqueous solutions. In addition, molecular modeling is used to provide insight into water structure at mineral surfaces, the surface sites involved in ion adsorption, and the distribution of ion pairs between aqueous solution and the mineral surface. Our studies have focused on systems involving alkaline earth metal (Mg2+, Ca2+, Sr2+, Ba2+) and heavy metal (Co2+, Cd2+) cations. The anions we have selected for studyinclude Cl-, NO3-, ClO4-, SO42-, SeO32-, and SeO42-. Ion adsorption and the potential formation ofternary complexes on silica (quartz, amorphous silica), alumina (corundum and gibbsite), and ferric iron oxides (goethite and hematite) are under investigation.

  18. Correlation of Chemisorption and Electronic Effects for Metal Oxide Interfaces: Transducing Principles for Temperature Programmed Gas Microsensors. Final Report

    International Nuclear Information System (INIS)

    Semancik, S.; Cavicchi, R. E.; DeVoe, D. L.; McAvoy, T. J.

    2001-01-01

    This Final Report describes efforts and results for a 3-year DoE/OST-EMSP project centered at NIST. The multidisciplinary project investigated scientific and technical concepts critical for developing tunable, MEMS-based, gas and vapor microsensors that could be applied for monitoring the types of multiple analytes (and differing backgrounds) encountered at DoE waste sites. Micromachined ''microhotplate'' arrays were used as platforms for fabricating conductometric sensor prototypes, and as microscale research tools. Efficient microarray techniques were developed for locally depositing and then performance evaluating thin oxide films, in order to correlate gas sensing characteristics with properties including composition, microstructure, thickness and surface modification. This approach produced temperature-dependent databases on the sensitivities of sensing materials to varied analytes (in air) which enable application-specific tuning of microsensor arrays. Mechanistic studies on adsorb ate transient phenomena were conducted to better understand the ways in which rapid temperature programming schedules can be used to produce unique response signatures and increase information density in microsensor signals. Chemometric and neural network analyses were also employed in our studies for recognition and quantification of target analytes

  19. Reduction of heat insulation upon soaking of the insulation layer

    Science.gov (United States)

    Achtliger, J.

    1983-09-01

    Improved thermal protection of hollow masonry by introduction of a core insulation between the inner and outer shell is discussed. The thermal conductivity of insulation materials was determined in dry state and after soaking by water with different volume-related moisture contents. The interpolated thermal conductivity values from three measured values at 10 C average temperature are presented as a function of the pertinent moisture content. Fills of expanded polystyrene, perlite and granulated mineral fibers, insulating boards made of mineral fibers and in situ cellular plastics produced from urea-formaldehyde resin were investigated. Test results show a confirmation of thermal conductivity values for insulating materials in hollow masonry.

  20. Electrical insulating liquid: A review

    Directory of Open Access Journals (Sweden)

    Deba Kumar Mahanta

    2017-08-01

    Full Text Available Insulating liquid plays an important role for the life span of the transformer. Petroleum-based mineral oil has become dominant insulating liquid of transformer for more than a century for its excellent dielectric and cooling properties. However, the usage of petroleum-based mineral oil, derived from a nonrenewable energy source, has affected the environment for its nonbiodegradability property. Therefore, researchers direct their attention to renewable and biodegradable alternatives. Palm fatty acid ester, coconut oil, sunflower oil, etc. are considered as alternatives to replace mineral oil as transformer insulation liquid. This paper gives an extensive review of different liquid insulating materials used in a transformer. Characterization of different liquids as an insulating material has been discussed. An attempt has been made to classify different insulating liquids-based on different properties.