Infrared reflectance measurement for InN thin film characterization

International Nuclear Information System (INIS)

Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

2006-01-01

Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

InN Quantum Dot Based Infra-Red Photodetectors.

Science.gov (United States)

Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

2016-01-01

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

Anomalous phase transition of InN nanowires under high pressure

International Nuclear Information System (INIS)

Tang Shun-Xi; Zhu Hong-Yang; Jiang Jun-Ru; Wu Xiao-Xin; Dong Yun-Xuan; Zhang Jian; Cui Qi-Liang; Yang Da-Peng

2015-01-01

Uniform InN nanowires were studied under pressures up to 35.5 GPa by using in situ synchrotron radiation x-ray diffraction technique at room temperature. An anomalous phase transition behavior has been discovered. Contrary to the results in the literature, which indicated that InN undergoes a fully reversible phase transition from the wurtzite structure to the rocksalt type structure, the InN nanowires in this study unusually showed a partially irreversible phase transition. The released sample contained the metastable rocksalt phase as well as the starting wurtzite one. The experimental findings of this study also reveal the potentiality of high pressure techniques to synthesize InN nanomaterials with the metastable rocksalt type structure, in addition to the generally obtained zincblende type one. (paper)

Evaluation of threading dislocation densities in In- and N-face InN

International Nuclear Information System (INIS)

Gallinat, C. S.; Koblmueller, G.; Wu, Feng; Speck, J. S.

2010-01-01

The threading dislocation (TD) structure and density has been studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 μm had higher TD densities compared with films grown thicker than 1 μm. The lowest measured TD density for an In-face InN film was ∼1.5x10 10 /cm 2 for 1 μm thick films.

Effects of film polarities on InN growth by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xu, K.; Yoshikawa, A.

2003-01-01

Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

International Nuclear Information System (INIS)

Alkis, Sabri; Alevli, Mustafa; Burzhuev, Salamat; Vural, Hüseyin Avni; Okyay, Ali Kemal; Ortaç, Bülend

2012-01-01

We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9–25.3, 5.45–34.8, 3.24–36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region.

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Two-dimensional electron gas in monolayer InN quantum wells

International Nuclear Information System (INIS)

Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.

2014-01-01

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15  cm −2 (or 1.25 × 10 14  cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES

Anomalous magnetism of superconducting Mg-doped InN film

Directory of Open Access Journals (Sweden)

P. H. Chang

2016-02-01

Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE

International Nuclear Information System (INIS)

Ri-Qing, Zhang; Xiang-Lin, Liu; Ting-Ting, Kang; Wei-Guo, Hu; Shao-Yan, Yang; Chun-Mei, Jiao; Qing-Sheng, Zhu

2008-01-01

We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films

Molecular beam epitaxy of InN nanowires on Si

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

Growth of cubic InN on r-plane sapphire

International Nuclear Information System (INIS)

Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

2003-01-01

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

InN{0001} polarity by ion scattering spectroscopy

International Nuclear Information System (INIS)

Walker, M.; Veal, T.D.; McConville, C.F.; Lu, Hai; Schaff, W.J.

2005-01-01

The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (000 anti 1)-polarity domains indicated that the InN film is approximately 75% In-polarity and 25% N-polarity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

International Nuclear Information System (INIS)

Miyajima, Takao; Kudo, Yoshihiro; Wakahara, Akihiro; Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi

2006-01-01

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9±0.5 and n(In)=12.4±0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In 2 O 3 , and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In 2 O 3 , and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In 2 O 3 , which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Transport and mobility properties of wurtzite InN and GaN

International Nuclear Information System (INIS)

Yarar, Zeki

2007-01-01

The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material parameters of InN, therefore the recently reported and the traditionally accepted parameter values for InN are used in simulations and the results are compared. The steady-state and transient electron transport characteristics are analyzed and the valley populations of electrons are determined as a function of electric field. The low-field mobility of electrons is also obtained as a function of temperature and over a wide range of carrier concentrations. It is seen that with the recently published material parameters the peak velocity of carriers in InN increases significantly, while the field at which it is attained decreases. The calculated maximum low field mobility at 300 K in InN with the recent material parameters is about 10000 cm 2 /V s for low carrier concentrations. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of M-plane (10-10)InN on LiAlO2(100) substrate

International Nuclear Information System (INIS)

Takagi, Yusuke; Muto, Daisuke; Araki, Tsutomu; Nanishi, Yasushi; Yamaguchi, Tomohiro

2009-01-01

In this study, we report the growth and characterization of M-plane InN films on LiAlO 2 (100) substrates by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M -plane InN films were successfully grown at a high temperature of 450 C and under a slightly In-rich condition, while the incorporation of C-plane phase was observed in M -plane InN films grown at low temperatures of less than 400 C or under a N-rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M-plane InN films. The in-plane epitaxial relationships of M -plane InN on LiAlO 2 (100) were[0001] InN //[010] LiAlO 2 and[1-210] InN //[001] LiAlO 2 . A surface electron accumulation layer on the obtained M-plane InN film is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia (Spain); Fundacio General de la Universitat de Valencia, Valencia (Spain); Iikawa, F. [Instituto de Fisica ' ' Gleb Wataghin' ' , UNICAMP, Campinas-SP (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2009-06-15

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-01-01

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

International Nuclear Information System (INIS)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T.; Suzuki, A.; Miyajima, T.

2003-01-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

Energy Technology Data Exchange (ETDEWEB)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T. [Dept. of Photonics, Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Suzuki, A. [Res. Org. of Sci. and Eng., Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Miyajima, T. [Sony Corp. Core Technology and Network Company, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2003-11-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structure and electronic properties of InN and In-rich group III-nitride alloys

International Nuclear Information System (INIS)

Walukiewicz, W; III, J W Ager; Yu, K M; Liliental-Weber, Z; Wu, J; Li, S X; Jones, R E; Denlinger, J D

2006-01-01

The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10 18 cm -3 and mobilities exceeding 2000 cm 2 (Vs) -1 . Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. (topical review)

InN grown by migration enhanced afterglow (MEAglow)

International Nuclear Information System (INIS)

Butcher, Kenneth Scott A.; Alexandrov, Dimiter; Terziyska, Penka; Georgiev, Vasil; Georgieva, Dimka; Binsted, Peter W.

2012-01-01

InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103 nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2θ peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Yoshihiro [Materials Analysis Lab., Sony Corporation, 4-18-1 Okada, Atsugi, Kanagawa 243-0021 (Japan); Wakahara, Akihiro [Deptm. of Electrical and Electronic Engineering, Toyohashi Univ. of Tech., Toyohashi 441-8580 (Japan); Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi [Deptm. of Photonics, Ritsumeikan Univ., 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

2006-06-15

We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9{+-}0.5 and n(In)=12.4{+-}0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In{sub 2}O{sub 3}, and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In{sub 2}O{sub 3}, and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In{sub 2}O{sub 3}, which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

International Nuclear Information System (INIS)

Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

2008-01-01

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron transport in wurtzite InN

Indian Academy of Sciences (India)

InN transport; mobility; energy and momentum relaxation; impurity scattering. ... future generation solar cell because the nitride alloys can cover the whole ... We apply the ensemble Monte Carlo method to investigate the electron transport in.

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Min Hwa; Moon, Dae Young; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon

2012-01-01

We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al 2 O 3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Shen, C.H.; Chen, H.Y.; Lin, H.W.; Wu, C.Y.; Gwo, S.; Klochikhin, A.A.; Davydov, V.Yu.

2007-01-01

We report the unusual photoluminescence (PL) properties of vertically aligned InN nanorod arrays grown on Si(111) with a Si 3 N 4 buffer layer. The optimum growth conditions of InN nanorods are obtained by controlling the III/V ratio and the growth temperature. Structural characterization by X-ray diffraction and scanning electron microscopy indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c-axis. Near-infrared PL from InN nanorods is clearly observed at room temperature. However, in comparison to the PL from InN epitaxial films, the PL from InN nanorods is significantly lower in efficiency and exhibit anomalous temperature dependence. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effect. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of Cp2Mg supply on MOVPE growth behavior of InN

International Nuclear Information System (INIS)

Sugita, K.; Sasamoto, K.; Hashimoto, A.; Yamamoto, A.

2011-01-01

This report shows the effect of Cp 2 Mg supply on MOVPE growth behavior of InN. At low growth temperature (∝600 C), the formation of adducts occurred, which degenerates the crystal quality. With increasing the growth temperature, the adduct formation was suppressed because the decomposition of Cp 2 Mg was enhanced and thus the incorporation of carbon into the film was suppressed. The use of Cp 2 Mg during InN growth increases the growth rate in the lateral direction. Non-doped InN film grown on GaN buffer has an In-face of the top side. On the other hand, the inversion domains seems to be formed in the highly Mg-doped InN. Tilt distribution decreases from 65 to 30 arcmin with the increase of Cp 2 Mg/TMI molar ratio 0 to 0.06. The donor is produced in highly Mg-doped MOVPE-grown InN (Cp 2 Mg/TMI molar ratio > 0.005). Therefore, the effect of Cp 2 Mg supply on MOVPE growth behavior of InN is found to improve a macro-scale crystal quality but also produces the donor (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigations on the structural and optical properties of sphere-shaped indium nitride (InN)

Energy Technology Data Exchange (ETDEWEB)

Bagavath, C.; Kumar, J. [Anna University, Crystal Growth Centre, Chennai, Tamil Nadu (India); Nasi, L. [IMEM-CNR, Parma (Italy)

2017-04-15

Indium nitride (InN) sphere-shaped micro crystals and nano crystals were made using sol-gel method. The crystalline size of the samples were calculated using X-ray diffraction, which were found to increase with the increase of nitridation temperature and time. High resolution-transmission electron microscopy images exhibited the distinct sphere shape of InN with different size of micro and nanometers. The calculated band gap of InN spheres using photo luminescence and UV-visible absorption spectra, was found to be 1.2 eV. Optical phonon modes of InN were determined from micro-Raman studies. (orig.)

Double resonance Raman effects in InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Domenech-Amador, N.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Calarco, R. [Institute of Bio- and Nanosystems, Research Center Juelich GmbH, Juelich (Germany); Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2012-04-15

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E{sub 1}(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E{sub 1} (LO)/E{sub 2}{sup h} intensity ratio increases with the excitation wavelength more rapidly than the A{sub 1}(LO)/E{sub 2}{sup h} ratio measured in InN thin films. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth modes of InN (000-1) on GaN buffer layers on sapphire

International Nuclear Information System (INIS)

Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

2005-01-01

In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

Crystallographic deterioration of MOVPE InN during the growth

International Nuclear Information System (INIS)

Sugita, K.; Nagai, Y.; Houchin, Y.; Hashimoto, A.; Yamamoto, A.

2007-01-01

This paper reports the crystallographic degradation of MOVPE InN during the growth. Using FWHMs of X-ray rocking curve, tilt ((0002)) and twist ((10-10)) angle distributions are evaluated and effects of the major growth parameters, such as growth temperature, growth time and with/without GaN buffer in the degradation, are revealed. With increasing either thickness of grown InN or growth temperature up to 600 C, the tilt angle distribution is markedly increased, indicating the crystallographic degradation of grown films. The use of a GaN buffer reduces such degradation. Since the twist angle distribution is scarcely changed by such growth parameters, the destruction of InN crystals during growth and annealing is concluded to be anisotropic. The trends of the crystallographic degradation revealed here are in good agreement with those for the electrical and optical degradation previously reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spectral dependence of third-order nonlinear optical properties in InN

International Nuclear Information System (INIS)

Ahn, H.; Lee, M.-T.; Chang, Y.-M.

2014-01-01

We report on the nonlinear optical properties of InN measured in a wide near-infrared spectral range with the femtosecond Z-scan technique. The above-bandgap nonlinear absorption in InN is found to originate from the saturation of absorption by the band-state-filling and its cross-section increases drastically near the bandgap energy. With below-bandgap excitation, the nonlinear absorption undergoes a transition from saturation absorption (SA) to reverse-SA (RSA), attributed to the competition between SA of band-tail states and two-photon-related RSA. The measured large nonlinear refractive index of the order of 10 −10 cm 2 /W indicates InN as a potential material for all-optical switching and related applications

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

Science.gov (United States)

Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

2010-09-01

Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.

LDA+U and tight-binding electronic structure of InN nanowires

Science.gov (United States)

Molina-Sánchez, A.; García-Cristóbal, A.; Cantarero, A.; Terentjevs, A.; Cicero, G.

2010-10-01

In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride (InN) nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

2015-02-05

Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Structure analysis of InN film using extended X-ray absorption fine structure method

Energy Technology Data Exchange (ETDEWEB)

Miyajima, T.; Kobayashi, T.; Hirata, S. [Core Technology Development Center, Core Technology and Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Y.; Liu, K.L. [Technology Solutions Center, Sony Corporation, 4-16-1 Okata, Atsugi, Kanagawa 243-0021 (Japan); Uruga, T.; Honma, T. [Japan Synchrotron Radiation Research Institute, Mikazuki-cho, Hyogo 679-5198 (Japan); Saito, Y.; Hori, M.; Nanishi, Y. [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2002-12-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d{sub In-N}=0.215 nm and d{sub In-In}=0.353 nm, respectively. The In-N bond length of d{sub In-In}=0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Structure analysis of InN film using extended X-ray absorption fine structure method

International Nuclear Information System (INIS)

Miyajima, T.; Kobayashi, T.; Hirata, S.; Kudo, Y.; Liu, K.L.; Uruga, T.; Honma, T.; Saito, Y.; Hori, M.; Nanishi, Y.

2002-01-01

We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d In-N =0.215 nm and d In-In =0.353 nm, respectively. The In-N bond length of d In-In =0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

Impact of potassium and water on the electronic properties of InN(0001) surfaces

International Nuclear Information System (INIS)

Reiss, S.; Eisenhardt, A.; Krischok, S.; Himmerlich, M.

2014-01-01

In this work we investigate the interaction of potassium and water with 2 x 2 reconstructed InN(0001) surfaces prepared by plasma-assisted molecular beam epitaxy. The influence of adsorbate-substrate-interaction on surface properties is characterized in-situ by photoelectron spectroscopy. Potassium exposure leads to a strong reduction in the work function Φ to 1.6 eV revealing a charge transfer from the adsorbate to the InN surface. In parallel, a reduction of the surface downward band bending by 0.2 eV and hence a reduced electron accumulation density is observed. While interaction of water with clean InN(0001)-2 x 2 surfaces induces only minor changes in the surface band bending, water adsorption at potassium covered InN(0001) leads to a reversal of the K-induced reduction in surface band bending and a slight increase of Φ to 2.4 eV. These results show that surrounding water modifies the interaction of potassium with InN(0001) surfaces. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation defects in InN irradiated with high-energy electrons

International Nuclear Information System (INIS)

Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

2013-01-01

The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

International Nuclear Information System (INIS)

Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan

2012-01-01

The surface electronic properties and adsorption behaviour of as-grown and oxidized N-polar InN films are characterized by photoelectron spectroscopy (XPS, UPS). The epitaxial growth of the InN layers was performed by plasma-assisted molecular beam epitaxy on GaN/6H-SiC(000-1). After growth and in situ characterization the InN surfaces were exposed to molecular oxygen to evaluate the adsorption behaviour of O 2 on N-polar InN and to study its impact on the surface electronic properties of the III-nitride material. The results are compared with studies on In-polar InN on GaN/sapphire templates. The as-grown N-polar InN surface exhibits a pronounced surface state at a binding energy of ∝1.6 eV. The valence band minimum lies about 0.8-1.0 eV below the surface Fermi level. Additionally, the XPS core level binding energies for InN(000-1) are reduced compared to InN(0001) films, indicating different surface band bending for clean N-polar and In-polar InN, respectively. The interaction of molecular oxygen with the InN(000-1) surface leads to a downward band bending by 0.1 eV compared to the initial state. Additional adsorption of species from the residual gas of the UHV chamber increases the surface downward band bending. Furthermore two pronounced oxygen related states with an energy distance of ∝5 eV could be detected in the valence band region. The adsorbed oxygen results in an additional component in the N1s core level spectra, which is interpreted as formation of NO x bonds. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

International Nuclear Information System (INIS)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M.

2013-01-01

Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.

Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

International Nuclear Information System (INIS)

Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

2004-01-01

We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

International Nuclear Information System (INIS)

Kobayashi, Atsushi; Okubo, Kana; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi

2012-01-01

We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

2011-01-01

A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

Four bars inn; Four bars inn

Energy Technology Data Exchange (ETDEWEB)

Nishiumi, T. [National Defense Academy, Kanagawa (Japan)

1999-05-15

The name Four Bars Inn puns on four drinking bars and four bars on a musical score. It is a public house sited on the busy St. Mary Street, Cardiff, England. During my stay in that town, I often attended the regular jam session that opened at the bar at nine o`clock every Monday evening. A jam session is an event in which any amateur player, and a professional artist occasionally, is allowed to come on the stage freely and to play jazz, the participation fee as low as 300-yen. It is an occasion that provides a friendly meeting of man and woman, young and old, everyone carrying a pint of ale. Senior people happily talking to young ones aged like their grandchildren certainly presents a heart-warming scene, which we scarcely encounter in Japan. The affection that the British entertain toward their domestic furnishings relayed down through many a generation may lead to their respect for senior citizens. I heartily look forward detecting like scenes some day at drinking spots in Japan where the consumption-happy days are over. (NEDO)

A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∝650 C)

International Nuclear Information System (INIS)

Sugita, K.; Hashimoto, A.; Yamamoto, A.

2009-01-01

This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (∝650 C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH 3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiang; Yang, Qun [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Tan, Chunjian [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Liang, Qiuhua [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Jiang, Junke [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Ye, Huaiyu [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China)

2017-05-15

Highlights: • A comprehensive adsorption mechanism of InN monolayer is theoretical studied to distinguish the physic/chemi-sorption. • Different adsorption sites for different gases are systematically discussed. • The influence (enhanced or weakened) of external electric field to InN-gas system is well investigated. • The influences of gas adsorption to the optical properties (work function and light adsorption ability) of InN monolayer are also researched. - Abstract: Using first-principles calculation within density functional theory (DFT), we study the gas (CO, NH{sub 3}, H{sub 2}S, NO{sub 2}, NO, SO{sub 2}) adsorption properties on the surface of single-layer indium nitride (InN). Four different adsorption sites (Bridge, In, N, Hollow) are chosen to explore the most sensitive adsorption site. On the basis of the adsorption energy, band gap and charge transfer, we find that the most energetic favourable site is changeable between In site and N site for different gases. Moreover, our results reveal that InN is sensitive to NH{sub 3}, SO{sub 2}, H{sub 2}S and NO{sub 2}, by a physisorption or a chemisorption nature. We also perform a perpendicular electric field to the system and find that the applied electric field has a significant effect for the adsorption process. Besides, we also observed the desorption effects on NH{sub 3} adsorbed at the hollow site of InN when the electric field applied. In addition, the optical properties of InN monolayer affected by different gases are also discussed. Most of the gas adsorptions will cause the inhibition of light adsorption while the others can reduce the work function or enhance the adsorption ability in visible region. Our theoretical results indicate that monolayer InN is a promising candidate for gas sensing applications.

Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111 Substrates

Directory of Open Access Journals (Sweden)

Yao Guo

2016-01-01

Full Text Available The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ (111 substrates are investigated using first-principles calculations based on density functional theory with GGA + U method. Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface. Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111 surfaces at the initial growth stage have been studied. The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001 // CeSZ (111 and InN [112¯0] // CeSZ [11¯0]. In addition, density of states (DOS analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111 surfaces. Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films. It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.

In-situ SiN{sub x}/InN structures for InN field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

2016-04-04

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Energy Technology Data Exchange (ETDEWEB)

Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

2010-09-01

100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

International Nuclear Information System (INIS)

Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

2006-01-01

The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Near-infrared InN quantum dots on high-In composition InGaN

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2013-04-01

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

Customer Satisfaction at the Hospitality Industry: Holiday Inn Helsinki-Vantaa Airport

OpenAIRE

Eld, Anna

2015-01-01

The intention of this Bachelor’s Degree thesis was to examine and observe the customer service and especially customer satisfaction in a hotel industry, and Holiday Inn Helsinki-Vantaa Airport was selected to be an example for this survey. This survey and thesis is carried out by the author in collaboration with Holiday Inn Helsinki-Vantaa Airport, which was the commissioner of this Bachelor’s Degree thesis. This hotel was chosen since the author of this thesis did her second internship there...

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

International Nuclear Information System (INIS)

Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

2006-01-01

We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING

Directory of Open Access Journals (Sweden)

Roberto Bernal Correa

2014-01-01

Full Text Available InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100, Si (111, and glass. The substrate temperature Ts was varied (300-500 oC in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates  ~ 0.5 mm and ~ 50 nm of different geometries.

Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

2009-07-01

Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

2010-07-15

InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Domagala, J.; Iliopoulos, E.; Adikimenakis, A.; Georgakilas, A.

2007-01-01

The in-plane lattice parameters of InN, GaN and Al 2 O 3 in a InN/GaN/Al 2 O 3 (0001) heterostructure have been measured as a function of temperature in the range of 25-350 C, using high resolution X-ray diffraction. The results reveal that both the GaN and InN crystals follow the in-plane thermal expansion of the Al 2 O 3 substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al 2 O 3 interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two-dimensional (2D) or three-dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

Growth and properties of InN, InGaN, and InN/InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Naoi, H.; Na, H. [Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Dept. of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2006-01-01

This paper describes our recent progress on InN, In-rich In{sub x}Ga{sub 1-x}N, and InN/In{sub x}Ga{sub 1-x}N quantum wells (QWs) grown by radio-frequency plasma-assisted molecular-beam epitaxy. Among the essential growth sequences to obtain high-quality InN, the nitridation process of (0001) sapphire substrates was reexamined. It was found that the lower-temperature and longer-period nitridation-process was very effective in improving crystalline quality of InN films. We succeeded in dramatically improving c -axis orientation of InN films without deteriorating their a -axis orientation by nitridating the substrates at a relatively low-temperature of 300 C for a relatively long period of 2 h. The full widths at half maximum (FWHMs) of (0002) X-ray rocking curves as narrow as 1 arcmin were obtained from only 400 nm thick InN films. These FWHMs are the narrowest value ever reported for InN and moreover approximately a twentieth part of the values obtained from our conventional InN films with a similar thickness, which were grown via the conventional nitridation process carried out at 550 C for 1 h. Furthermore interference fringes in X-ray diffraction ({omega}-2{theta} scan) were observed from these improved InN films. These high crystalline quality InN layers have been employed as a template for the growth of In-rich In{sub x}Ga{sub 1-x}N layers (0.70{<=}x{<=}0.94). The resultant In{sub x}Ga{sub 1-x}N layers have shown dramatic improvements in not only the surface morphology but also both the a- and c-axis orientations. By employing In{sub 0.8}Ga{sub 0.2}N layers of improved quality as the bottom barrier layer, InN/In{sub 0.8}Ga{sub 0.2}N multiple quantum well (MQW) and single quantum well (SQW) structures with different well widths were fabricated. Clear satellite peaks of X-ray diffraction were observed from these MQW structures. Both of these SQW and MQW structures have exhibited a blue shift of the photoluminescence peak energy with decreasing well width

Evaluation of the Environmental Health Conditions of Qom Hotels & Inns

Directory of Open Access Journals (Sweden)

B. Farzinnia

2009-02-01

Full Text Available Background and ObjectivesTourism is one of the three major global industries with 4 percent annual economic growth. Qom with roughly 17 million tourists in 2005 was the second religious tourism center in Iran. This study was designed to determine the environmental health criteria of Qom hotels and inns in 2007.MethodsThis descriptive - cross sectional study was carried out based on a standard check list of substance of edible, drinkable, cosmetic and hygienic products law from ministry of health and medical sciences. The checklist included 73 questions which were completed by face to face interviews and sanitary inspections. After analyzing the results of each residential center, the questionnaires were classified into three categories: hygienic (over 80 score, sanitary (40-79 and unacceptable centers (less than 40. The data were presented and analyzed by descriptive and analytical statistical methods such as X 2 and Fisher exact test.ResultsThe percentages of hygienic, sanitary and unacceptable conditions of hotels and inns were 35.5, 54.8 and 9.7, respectively. There was a direct relationship between academic degree of residential managers and the validity of employees health card (P=0.042 ConclusionBased on this the research, the environmental status of Qom hotels and inns was in relatively desirable conditions. Residential places with unacceptable condition were almost located in the old region of the city (e.g. around the Holly Shrine. Due to the structural failures, architectural problems and tremendous cost for repairs, it’s better that their activities be stopped and banned by government. With regard to the high percentage of hotels with sanitary conditions, at least improvements in health conditions accompanied by training and supervision are recommended. Keywords: Environmental Health; Environment and Public Health; Hotel; Inn; Qom, Iran.

4th INNS Symposia Series on Computational Intelligence in Information Systems

CERN Document Server

Au, Thien

2015-01-01

This book constitutes the refereed proceedings of the Fourth International Neural Network Symposia series on Computational Intelligence in Information Systems, INNS-CIIS 2014, held in Bandar Seri Begawan, Brunei in November 2014. INNS-CIIS aims to provide a platform for researchers to exchange the latest ideas and present the most current research advances in general areas related to computational intelligence and its applications in various domains. The 34 revised full papers presented in this book have been carefully reviewed and selected from 72 submissions. They cover a wide range of topics and application areas in computational intelligence and informatics.  

Ab-initio study of Mg-doped InN(0001 surface

Directory of Open Access Journals (Sweden)

A. Belabbes

2013-01-01

Full Text Available We study the incorporation of Mg atoms into the InN(0001 surface. Energies and atomic geometries are described within density functional theory, while the electronic structure is investigated by an approximate quasiparticle method that yields a gap value of 0.7 eV for bulk InN. The formation of substitutional Mg is energetically favored in the surface layer. The surface electronic structure is less influenced by Mg-derived states. The Fermi level is pinned by In-derived surface states. With increasing depth of Mg beneath the surface the Fermi-level position moves toward the valence band top, suggesting formation of holes and, hence, p-doping of Mg in bulk-like layers.

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

2006-06-15

We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Kehagias, Th.; Komninou, Ph.; Georgakilas, A.

2005-01-01

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 and 520 deg. C. The number of monolayers of initial two-dimensional growth, in the case of Stranski-Krastanov mode, varies monotonically with substrate temperature, from 2 ML at 400 deg. C to about 12 ML at 500 deg. C. The evolution and coalescence of nucleated islands were also investigated as a function of substrate temperature. It was found that at higher temperature their coalescence is inhibited leading to porous-columnar InN thin films, which exhibit growth rates higher than the nominal value. Therefore, in order to achieve continuous InN layers on GaN (0001) a two-step growth approach is introduced. In that approach, InN is nucleated at low temperatures on GaN and the growth continues until full coalescence of the nucleated islands. Subsequently, this nucleation layer is overgrown at higher substrate temperature in order to achieve high-quality continuous films. The InN films grown by the two-step method were investigated by x-ray diffraction, Hall-effect measurements, and

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

Energy Technology Data Exchange (ETDEWEB)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey); Bilkent University, Institute of Materials Science and Nanotechnology, Ankara (Turkey); Tuzakli, Refik [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey)

2017-03-15

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

International Nuclear Information System (INIS)

Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend; Tuzakli, Refik

2017-01-01

Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

Determination of dislocation densities in InN

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2012-03-15

The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann transport equation. It is found that dislocation scattering is the dominant scattering mechanisms at low temperatures because of the large lattice mismatch with the substrate and hence the high density of dislocations in these material systems. Nevertheless, InN epilayers are characterized by a high background carrier density, probably associated with unwanted impurities. Therefore, we also included in our calculations the ionized impurity scattering. However, the effect of ionized impurity scattering as well as the acoustic phonon scattering, remote- background-ionized impurity scattering, and interface roughness scattering on electron mobility are much smaller than that of dislocation scattering. The dislocation densities, in samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m, are then determined from the best fit to the experimental data for the low-temperature transport mobility (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effective electron mass and phonon modes in n-type hexagonal InN

Science.gov (United States)

Kasic, A.; Schubert, M.; Saito, Y.; Nanishi, Y.; Wagner, G.

2002-03-01

Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.

Synthesis of InN nanoparticles by rapid thermal ammonolysis

Czech Academy of Sciences Publication Activity Database

Šimek, P.; Sedmidubský, D.; Klimová, K.; Huber, Š.; Brázda, Petr; Mikulics, M.; Jankovský, O.; Sofer, Z.

2014-01-01

Roč. 16, č. 12 (2014), "2805-1"-"2805-11" ISSN 1388-0764 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : InN * nanoparticles * nanocrystals Subject RIV: CA - Inorganic Chemistry Impact factor: 2.184, year: 2014

Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

International Nuclear Information System (INIS)

Porntheeraphat, S.; Nukeaw, J.

2008-01-01

The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E g ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films

A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

International Nuclear Information System (INIS)

Isamoto, K.; Uesaka, Y.; Yamamoto, A.; Hashimoto, A.

2006-01-01

We have investigated about a control technique of oxygen contamination into the InN layers by simultaneous irradiation of Ga beam during RF-MOMBE growth using the combination of the TMIn and the RF-plasma nitrogen sources. Red shifts of the band gap energy and the improvement of the electrical properties have been achieved by the Ga beam irradiation. The suppression mechanism of the oxygen contamination has been discussed from the experimental results of the InN growth by the RF-MOMBE with the Ga beam irradiation. The present results strongly indicate that the simultaneous irradiation of the Ga beam would be useful to suppress the oxygen contamination into the InN layers during the growth. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport

Directory of Open Access Journals (Sweden)

Zervos Matthew

2008-01-01

Full Text Available Abstract We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated carriers near and above the optical absorption edge of InN NWs where an interplay of state filling, photoinduced absorption, and band-gap renormalization have been observed. The interface between states filled by free carriers intrinsic to the InN NWs and empty states has been determined to be at 1.35 eV using CW optical transmission measurements. Transient absorption measurements determined the absorption edge at higher energy due to the additional injected photogenerated carriers following femtosecond pulse excitation. The non-degenerate white light pump-probe measurements revealed that relaxation of the photogenerated carriers occurs on a single picosecond timescale which appears to be carrier density dependent. This fast relaxation is attributed to the capture of the photogenerated carriers by defect/surface related states. Furthermore, intensity dependent measurements revealed fast energy transfer from the hot photogenerated carriers to the lattice with the onset of increased temperature occurring at approximately 2 ps after pulse excitation.

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

International Nuclear Information System (INIS)

Yang, A. L.; Yamashita, Y.; Kobata, M.; Yoshikawa, H.; Sakata, O.; Kobayashi, K.; Matsushita, T.; Píš, I.; Imura, M.; Yamaguchi, T.; Nanishi, Y.

2013-01-01

Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d 5/2 and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.

High electron mobility InN

International Nuclear Information System (INIS)

Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

2007-01-01

Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Science.gov (United States)

Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

2018-01-01

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

Observation of Significant enhancement in the efficiency of a DSSC by InN nanoparticles over TiO 2-nanoparticle films

Science.gov (United States)

Wang, Tsai-Te; Raghunath, P.; Lu, Yun-Fang; Liu, Yu-Chang; Chiou, Chwei-Huawn; Lin, M. C.

2011-06-01

We have studied the effect of InN deposited over TiO2 nanoparticle (NP) films on the performance of dye-sensitized solar cells (DSSCs) using N3 dye with I/I3- electrolyte. A 10-20% increase in efficiency was observed for InN deposited, N3 sensitized 5-8.5 μm thick TiO2 films as compared to similar non-treated films. The deposition of InN was carried out in the temperature range of 573-723 K organometallic chemical vapor deposition (OMCVD). Spectral shifts and DFT calculations with a model anchoring group (R‧COOH) both suggest binding of the N3 dye directly to both InN and the InN/TiO2 sites.

Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

2015-10-30

Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

International Nuclear Information System (INIS)

Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

2006-01-01

In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Directory of Open Access Journals (Sweden)

Huijie Li

2016-10-01

Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

Energy Technology Data Exchange (ETDEWEB)

Molina-Sanchez, A.; Garro, N.; Garcia-Cristobal, A.; Cantarero, A. [Instituto de Ciencia de los Materiales, Universidad de Valencia (Spain); Segura-Ruiz, J. [European Synchrotron Radiation Facility, Experiments Div., Grenoble (France); Iikawa, F. [Instituto de Fisica Gleb Wataghin - Unicamp, CP 6165, Campinas (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2012-03-15

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schroedinger equation for a cylindrical nanowire of infinite length, assuming a parabolic conduction band. The columnar geometry introduces effects in both the electron density and in the self-consistent conduction band profile, with no equivalence in planar layer. On the other hand, the differences in the photoluminescence excitation spectra are related to the inhomogeneous electron distribution inside the nanowires, caused by a bulk donor concentration and a two-dimensional density of ionized surface states. For nanowire radii larger than 30 nm, such concentrations modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

2011-01-15

We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

First-principles study of Mg incorporation at wurtzite InN (0 0 0 1) and (0001-bar) surfaces

International Nuclear Information System (INIS)

Ding, S.F.; Qu, X.P.; Fan, G.H.

2009-01-01

In this article we investigate the energetics of Mg adsorption and incorporation at the InN(0 0 0 1) and InN(0001-bar) surfaces by the method of total energy plane-wave expansions with ultra-soft pseudo potential technology based on the density functional theory (DFT) in the generalized approximation (GGA). It is found that for a 1/4 monolayer (ML) coverage of the InN(0 0 0 1) surface, Mg atoms preferentially adsorb at the bridge sites and T4 sites, but they are unstable when compared with Mg incorporated in the first three layers. For a 1/4 ML coverage of the InN(0001-bar) surface, Mg atoms preferentially adsorb at the H3 sites with the formation energy of -3.49 (eV/(2x2) supercell), which is lower than that of the T4 sites, and the formation energy increases with increasing magnesium coverage. Further study shows that the formation energy for Mg atom is lower than that of In atom, which indicates that magnesium adsorption is more favorable in these conditions.

R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

Science.gov (United States)

Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn

"Could I return to my life?" Integrated Narrative Nursing Model in Education (INNE).

Science.gov (United States)

Artioli, Giovanna; Foà, Chiara; Cosentino, Chiara; Sulla, Francesco; Sollami, Alfonso; Taffurelli, Chiara

2018-03-28

The Integrated Narrative Nursing Model (INNM) is an approach that integrates the qualitative methodology typical of the human sciences, with the quantitative methodology more often associated with the natural sciences. This complex model, which combines a focus on narrative with quantitative measures, has recently been effectively applied to the assessment of chronic patients. In this study, the model is applied to the planning phase of education (Integrated Narrative Nursing Education, INNE), and proves to be a valid instrument for the promotion of the current educational paradigm that is centered on the engagement of both the patient and the caregiver in their own path of care. The aim of this study is therefore to describe the nurse's strategy in the planning of an educational intervention by using the INNE model. The case of a 70-year-old woman with pulmonary neoplasm is described at her first admission to Hospice. Each step conducted by the reference nurse, who uses INNE to record the nurse-patient narrative and collect subsequent questionnaires in order to create a shared educational plan, is also described. The information collected was submitted, starting from a grounded methodology to the following four levels of analysis: I. Needs Assessment, II. Narrative Diagnosis, III. Quantitative Outcome, IV. Integrated Outcome. Step IV, which is derived from the integration of all levels of analysis, allows a nurse to define, even graphically, the conceptual map of a patient's needs, resources and perspectives, in a completely tailored manner. The INNE model offers a valid methodological support for the professional who intends to educate the patient through an inter-subjective and engaged pathway, between the professional, their patient and the socio-relational context. It is a matter of adopting a complex vision that combines processes and methods that require a steady scientific basis and advanced methodological expertise with active listening and empathy

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Tuna, Oecal

2013-07-18

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH{sub 3} relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH{sub 3} dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques

Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

International Nuclear Information System (INIS)

Tuna, Oecal

2013-01-01

Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

Observation of complete oxidation of InN to In2O3 in air at elevated temperatures by using X-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Lee, Ik-Jae; Yu, Chung-Jong; Hur, Tae-Bong; Kim, Hyung-Kook; Kim, Chae-Ok; Kim, Jae-Yong

2006-01-01

We present here an X-ray photoemission spectroscopy (XPS) analysis of a polycrystalline InN film on sapphire. The InN was completely oxidized to bixbyite in air after annealing at high temperatures. The analysis of the X-ray diffraction data demonstrated that the oxidation process started around 450 .deg. C. The high-resolution XPS data showed the In3d peaks and the N1s main peak located near 396.4 eV for the InN films. After oxidation, the N1s peak had completely disappeared while the In3d peaks had not changed. These results strongly indicate that the oxidation transformed the structure of InN film to In 2 O 3 .

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

International Nuclear Information System (INIS)

Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

1995-01-01

Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Rioboo, R.J.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid (Spain); Cusco, R.; Domenech-Amador, N.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga (Japan)

2012-06-15

The surface acoustic wave velocity in InN has been experimentally determined by means of Brillouin scattering experiments on c - and m -face epilayers. From simulations based on the Green's function formalism we determine the shear elastic constants c{sub 66} and c{sub 44} and propose a complete set of elastic constants for wurtzite InN. The analysis of the sagittal and azimuthal dependence of the surface acoustic wave velocity indicates a slightly different elastic behavior of the m -face sample that basically affects the c{sub 44} elastic constant. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

International Nuclear Information System (INIS)

Guerrero-Sánchez, J.; Takeuchi, Noboru

2016-01-01

Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.

The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

International Nuclear Information System (INIS)

Anyebe, E A; Zhuang, Q; Kesaria, M; Krier, A

2014-01-01

We report the catalyst free growth of wurtzite InN nanorods (NRs) and microislands on bare Si (111) by plasma-assisted molecular beam epitaxy at various temperatures. The morphological evolution from NRs to three dimensional (3D) islands as a function of growth temperature is investigated. A combination of tapered, non-tapered, and pyramidal InN NRs are observed at 490 °C, whereas the InN evolves to faceted microislands with an increase in growth temperature to 540 °C and further developed to indented and smooth hemispherical structures at extremely high temperatures (630 °C). The evolution from NRs to microislands with increase in growth temperature is attributed to the lowering of the surface free energy of the growing crystals with disproportionate growth velocities along different growth fronts. The preferential adsorption of In atoms on the (0001) c-plane and (10-10) m-plane promotes the growth of NRs at relatively low growth temperature and 3D microislands at higher temperatures. The growth rate imbalance along different planes facilitates the development of facets on 3D microislands. A strong correlation between the morphological and structural properties of the 3D films is established. XRD studies reveal that the NRs and the faceted microislands are crystalline, whereas the hemispherical microislands grown at extremely high growth temperature contain In adlayers. Finally, photoluminescent emissions were observed at ∼0.75 eV from the InN NRs. (paper)

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

Science.gov (United States)

Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

2016-12-01

The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

International Nuclear Information System (INIS)

Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

2013-01-01

The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

Science.gov (United States)

Moret, Matthieu; Briot, Olivier; Gil, Bernard

2015-03-01

Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

A Sub-ppm Acetone Gas Sensor for Diabetes Detection Using 10 nm Thick Ultrathin InN FETs

Science.gov (United States)

Kao, Kun-Wei; Hsu, Ming-Che; Chang, Yuh-Hwa; Gwo, Shangjr; Yeh, J. Andrew

2012-01-01

An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4 ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm by 2 mm. Detection of such a low acetone concentration in exhaled breath could enable early diagnosis of diabetes for portable physiological applications. The ultrathin InN epilayer extensively enhances sensing sensitivity due to its strong electron accumulation on roughly 5–10 nm deep layers from the surface. Platinum as catalyst can increase output current signals by 2.5-fold (94 vs. 37.5 μA) as well as reduce response time by 8.4-fold (150 vs. 1,260 s) in comparison with bare InN. More, the effect of 3% oxygen consumption due to breath inhalation and exhalation on 2.4 ppm acetone gas detection was investigated, indicating that such an acetone concentration can be analyzed in air. PMID:22969342

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

International Nuclear Information System (INIS)

Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

2009-01-01

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

Conservation of the Sinclair Inn Museum, and the Painted Room Annapolis Royal, Nova Scotia, Canada

Science.gov (United States)

Shaftel, A.; Ward, J.

2017-08-01

Conservation of the historic 18thC. Sinclair Inn Museum, and of the recently discovered late 18th/early 19thC. unique panoramic wall paintings located in an upstairs room, are co-dependent. This project was carried out with Canadian Conservation Institute (CCI) staff, and Conservator in Private Practice Ann Shaftel. This paper will introduce the Sinclair Inn Museum, outline the CCI murals and building investigations of 2011-15, the mural investigation of 2015-16, which confirmed that the mural extended to all four walls of the function room, now referred to as the Painted Room, and to describe how it has been revealed and conserved to date.

Auger recombination as the dominant nonradiative recombination channel in InN

NARCIS (Netherlands)

Cho, Y.; Lue, X.; Wienold, M.; Ramsteiner, M.; Grahn, H.T.; Brandt, O.

2013-01-01

We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by

Golf Tournament Drives in a Win for the Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

A Dance Class, a Drag King, & the Pedagogical Possibilities of Performative Hip-Hop: An Interview with Carmen Morrison & Alex U. Inn

Science.gov (United States)

Schönfeldt-Aultman, Scott M.; Morrison, Carmen

2015-01-01

Alex U. Inn is the co-founder and one of the two MCs of the hip-hop drag king group, Momma's Boyz. Momma's Boyz celebrated their tenth anniversary in 2014. Carmen Morrison is the offstage name of Alex U. Inn, though "Carmen" now goes by Alex offstage, as well. Within this interview, the names "Carmen" and "Alex" are…

Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra

International Nuclear Information System (INIS)

Katsidis, C. C.; Ajagunna, A. O.; Georgakilas, A.

2013-01-01

Fourier Transform Infrared (FTIR) reflectance spectroscopy has been implemented as a non-destructive, non-invasive, tool for the optical characterization of a set of c-plane InN single heteroepitaxial layers spanning a wide range of thicknesses (30–2000 nm). The c-plane (0001) InN epilayers were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN(0001) buffer layers which had been grown on Al 2 O 3 (0001) substrates. It is shown that for arbitrary multilayers with homogeneous anisotropic layers having their principal axes coincident with the laboratory coordinates, a 2 × 2 matrix algebra based on a general transfer-matrix method (GTMM) is adequate to interpret their optical response. Analysis of optical reflectance in the far and mid infrared spectral range has been found capable to discriminate between the bulk, the surface and interface contributions of free carriers in the InN epilayers revealing the existence of electron accumulation layers with carrier concentrations in mid 10 19 cm −3 at both the InN surface and the InN/GaN interface. The spectra could be fitted with a three-layer model, determining the different electron concentration and mobility values of the bulk and of the surface and the interface electron accumulation layers in the InN films. The variation of these values with increasing InN thickness could be also sensitively detected by the optical measurements. The comparison between the optically determined drift mobility and the Hall mobility of the thickest sample reveals a value of r H = 1.49 for the Hall factor of InN at a carrier concentration of 1.11 × 10 19 cm −3 at 300°Κ.

Effects of GaN capping on the structural and the optical properties of InN nanostructures grown by using MOCVD

International Nuclear Information System (INIS)

Sun, Yuanping; Cho, Yonghoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui

2010-01-01

InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at ∼0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

International Nuclear Information System (INIS)

Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

2013-01-01

Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range. (paper)

Growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

2016-01-01

The growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)_1/(GaN)_4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Quasi-two-dimensional superconductivity in wurtzite-structured InN films

International Nuclear Information System (INIS)

Ling, D.C.; Cheng, J.H.; Lo, Y.Y.; Du, C.H.; Chiu, A.P.; Chang, P.H.; Chang, C.A.

2007-01-01

C-axis oriented InN films with wurtzite structure were grown on sapphire(0001) substrate by MOCVD method. Superconductivity with transition onset temperature T c,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1 x 10 19 cm -3 to 7 x 10 20 cm -3 . Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature T c0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR/R∝(H/R) 2 , indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field H c2 ab (0) and H c2 c (0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

OpenAIRE

Ángel Guillermo Félix Mendoza; Danny Daniel Cobeña López; Lisbeth Alexandra Párraga Muñoz; Lorena Carreño Mendoza

2015-01-01

El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores...

Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

Science.gov (United States)

Barick, B. K.; Saroj, Rajendra Kumar; Prasad, Nivedita; Sutar, D. S.; Dhar, S.

2018-05-01

Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [ 1 1 2 bar 0 ] and [0 0 0 1] directions leading to the formation of such a network structure, where the vertically [0 0 0 1] oriented tapered walls are laterally align along one of the three [ 1 1 2 bar 0 ] directions. Inclined facets of these walls are identified as semipolar (1 1 2 bar 2) -planes of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the surface of the side facets [(1 1 2 bar 2) -planes] of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.

2nd INNS Conference on Big Data

CERN Document Server

Manolopoulos, Yannis; Iliadis, Lazaros; Roy, Asim; Vellasco, Marley

2017-01-01

The book offers a timely snapshot of neural network technologies as a significant component of big data analytics platforms. It promotes new advances and research directions in efficient and innovative algorithmic approaches to analyzing big data (e.g. deep networks, nature-inspired and brain-inspired algorithms); implementations on different computing platforms (e.g. neuromorphic, graphics processing units (GPUs), clouds, clusters); and big data analytics applications to solve real-world problems (e.g. weather prediction, transportation, energy management). The book, which reports on the second edition of the INNS Conference on Big Data, held on October 23–25, 2016, in Thessaloniki, Greece, depicts an interesting collaborative adventure of neural networks with big data and other learning technologies.

In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

Science.gov (United States)

Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

2009-05-01

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

Minibaaritoiminnan kehittäminen Holiday Inn Helsinki-Vantaa Airportissa

OpenAIRE

Raunio, Reijo

2009-01-01

Tämä tutkimustyyppinen opinnäytetyö käsittelee Restel Oy:n operoiman Holiday Inn Helsinki-Vantaa Airportin minibaaritoiminnan kehittämistä. Työn on tarkoitus toimia hotellin johdon apuvälineenä pohdittaessa toimenpiteitä, joilla voitaisiin tehostaa minibaaritoiminnan tuottoja ja parantaa sen kannattavuutta. Koska kannattavuuden käsitteen avaamiselle syntyy näin ollen olennainen tarve, se saa pääroolin viitekehyksessä. Kannattavuuden osalta käsitellään paitsi sen yleistä määrittelyä myös ...

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

International Nuclear Information System (INIS)

Fernandez, J.R.L.; Chitta, V.A.; Abramof, E.

2000-01-01

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature

An Analysis of Open-Ended Online Reviews about Bed and Breakfast and Inns in Portugal

Directory of Open Access Journals (Sweden)

Sara Evans Machado dos Santos

2014-03-01

Full Text Available Researches about User-Generated Content (UGC have gained attention in the fields of Tourism and Hospitality in the last years. This study focus on online reviews about alternative accommodations – B&Bs and Inns. The development of this work was realized applying inductive methods and using an exploratory approach. We collected a sample of 450 online reviews and analyzed them segment by segment, making a total of 4621 segments. We used the Appraisal Theory to assess what attitudes online reviewers are expressing about B&Bs and Inns in Lisbon. We verified that positive appreciation is the most frequent attitude while expressions of affect and judgment are more rare. This study contributes to the academy as it brings a new parameter of analysis of UGC using the Appraisal Theory in the field of Hospitality.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

International Nuclear Information System (INIS)

Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

2011-01-01

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (∼8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

Energy Technology Data Exchange (ETDEWEB)

Penner, J

2007-12-20

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

Structural and magnetic properties of Cr and Mn doped InN

International Nuclear Information System (INIS)

Ney, A.; Rajaram, R.; Arenholz, E.; Harris, J.S.; Samant, M.; Farrow, R.F.C.; Parkin, S.S.P.

2006-01-01

We present a detailed magnetic characterization of Cr and Mn doped InN films be means of superconducting quantum interference device magnetometry and X-ray magnetic circular dichroism. The InN:Cr films exhibit ferromagnetic behavior up to 300 K in a doping region from 2% to 8% without detectable phase segregation. The easy axis of magnetization is found to be in the film plane. On the contrary, Mn-doped films show signatures of phase segregation and paramagnetic behavior

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Energy Technology Data Exchange (ETDEWEB)

Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

2017-03-13

The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

HOUSE DUST MITE CONTAMINATION IN HOTELS AND INNS IN BANDAR ABBAS, SOUTH OF IRAN

Directory of Open Access Journals (Sweden)

M. Soleimani, J. Rafinejad

2008-07-01

Full Text Available House dust mites have been shown to be strongly associated with allergic respiratory diseases such as, bronchial asthma, rhinitis and atopic dermatitis in the world. The climatic conditions of Bandar-Abbas, which is located in a coastal area and has a humid subtropical climate, provide a suitable place to proliferate mites. The aim of this study was to determine the contamination rate and analyze the house dust mite fauna in hotels and inns in Bandar-Abbas that had not been investigated previously. In this study 6 hotels and 6 inns were selected randomly in six areas of Bandar-Abbas. Two dust samples were collected from each place with a vacuum cleaner. One square meter of carpets and mattresses were vacuumed for a period of 1 min. Then the samples were cleared in lactic acid and then mites were mounted in Hoyer's medium for study and identification. A total of 2644 mites were collected and identified. The major mite family was Pyroglyphidae (98%. Dermatophagoides pteronyssinus was the most frequent and most numerous species recorded, occurring in 91% of samples examined and forming 88% of the Pyroglyphidae and 86% of the total mite populations. The family Cheyletidae was less commonly found with Cheyletus malaccensis (2%. Most of the mites were isolated from the carpets (57.5%, and a smaller number from mattresses (42.5%. Mites were present in 96% of the dust samples. Results revealed that all inns and 83% of hotels were contaminated by more than one species of mite and 34% of them had a population of more than 100 mites /g dust. This rate of contamination can be a major risk factor in asthma and other respiratory allergic diseases

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

International Nuclear Information System (INIS)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

2014-01-01

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011 ¯ 0] azimuth and a superimposed diffraction along the [112 ¯ 0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm −1 and E2(high) at 488 cm −1 . Hall effect measurements showed a carrier density of 9 × 10 18  cm −3 and an electron Hall mobility of 340 cm 2 /(V s) for a film thickness of 140 nm

A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE

International Nuclear Information System (INIS)

Hashimoto, A.; Iwao, K.; Yamamoto, A.

2008-01-01

In the InN growth on sapphire substrates, it is difficult to control both of tilt and twist angle fluctuations at same time. It is necessary to understand initial growth stage such as the role of nitridation process to improve the mosaicity. Low-temperature nitridation technique brings the drastically improvement of the tilt angle fluctuation, although the twist angle fluctuation becomes worse. Such experimental results strongly indicate that there is some trade-off relation between the tilt and the twist angle fluctuations as a function of the nitridation condition such as the nitridation time. In this paper, we discuss about such trade-off relation in the direct growth of InN on the nitridation sapphire substrates and also propose a simple model of initial nitridation process to explain it. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

International Nuclear Information System (INIS)

Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S.

2007-01-01

The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

International Nuclear Information System (INIS)

Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

International Nuclear Information System (INIS)

Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Science.gov (United States)

Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

2010-08-06

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

Energy Technology Data Exchange (ETDEWEB)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A. [Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), Álvaro Obregón 64, 78000 San Luis Potosí (Mexico); Orozco Hinostroza, I. E. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Col. Lomas 4a Sección, 78216 San Luis Potosí (Mexico); Escobosa Echavarría, A. [Electric Engineering Department, Centro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 México D.F. (Mexico)

2014-05-12

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

Science.gov (United States)

By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn

Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

International Nuclear Information System (INIS)

Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

2008-01-01

The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate

Local lattice environment of indium in GaN, AlN, and InN

International Nuclear Information System (INIS)

Penner, J.

2007-01-01

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2008-07-01

We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

1996-01-01

The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

2005-01-01

We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A.

2008-01-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E 2 h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Fundacio General de la Universitat de Valencia, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2008-07-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E{sub 2}{sup h} mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Solar hot water system installed at Quality Inn, Key West, Florida

Science.gov (United States)

1980-04-01

The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

Study of Stark Effect in n-doped 1.55 μm InN0.92yP1-1.92yBiy/InP MQWs

Science.gov (United States)

Bilel, C.; Chakir, K.; Rebey, A.; Alrowaili, Z. A.

2018-05-01

The effect of an applied electric field on electronic band structure and optical absorption properties of n-doped InN0.92y P1-1.92y Bi y /InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model. The incorporation of N and Bi atoms into an InP host matrix leads to rapid reduction of the band gap energy covering a large infrared range. The optimization of the well parameters, such as the well/barrier widths, N/Bi compositions and doping density, allowed us to obtain InN0.92y P1-1.92y Bi y /InP MQWs operating at the wavelength 1.55 μm. Application of the electric field causes a red-shift of the fundamental transition energy T 1 accompanied by a significant change in the spatial distribution of confined electron density. The Stark effect on the absorption coefficient of n-doped InN0.92y P1-1.92y Bi y /InP MQWs was investigated. The Bi composition of these MQWs was adjusted for each electric field value in order to maintain the wavelength emission at 1.55 μm.

R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

Science.gov (United States)

The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Magnetic-field and temperature dependence of the energy gap in InN nanobelt

Directory of Open Access Journals (Sweden)

K. Aravind

2012-03-01

Full Text Available We present tunneling measurements on an InN nanobelt which shows signatures of superconductivity. Superconducting transition takes place at temperature of 1.3K and the critical magnetic field is measured to be about 5.5kGs. The energy gap extrapolated to absolute temperature is about 110μeV. As the magnetic field is decreased to cross the critical magnetic field, the device shows a huge zero-bias magnetoresistance ratio of about 400%. This is attributed to the suppression of quasiparticle subgap tunneling in the presence of superconductivity. The measured magnetic-field and temperature dependence of the superconducting gap agree well with the reported dependences for conventional metallic superconductors.

Identifying Sustainable Design Opportunities in Tribal Hotels and Casinos: Mescalero Inn of the Mountain Gods Hotel and Casino

Energy Technology Data Exchange (ETDEWEB)

Fuller, Diana [Univ. of Illinois, Springfield, IL (United States); Martino, Anthony [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies; Begay, Sandra K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies

2016-10-01

The Indian Gaming Regulatory Act, passed by Congress on October 17, 1988 provided tribes with the Federal statute to pursue gaming activities on tribal lands. Many Native communities contribute to larger regional economies and tourism industries. These casino facilities often include resort-style hotel amenities. Not surprisingly, they are also large consumers of energy, operating 24 hours a day and 7 days a week. Tribes with hotels and casinos can implement sustainable design features and not only receive economic gain, but also environmental and community benefits. The intention of this paper is to identify sustainable design opportunities at the Inn of the Mountain Gods Hotel and Casino. This research stems from previous work the researcher conducted and subsequently published for the Illinois Green Business Association. First, the paper reviews what sustainable design is and points of interest when considering sustainable construction. Next, the paper explores the precedents set by the Blue Lake Rancheria, Rincon Band of Luiseno Indians, and the Forest County Potawatomi Tribe. Then, the research examines areas to collect baseline information and identify opportunities in sustainable design for the Mescalero Apache Tribe, Inn of the Mountain Gods Hotel and Casino located in New Mexico. Lastly, the work explores the resources and funding options available to the tribe.

Abstracts. 1978 AFOSR Contractors Meeting on Air-Breathing Combustion Dynamics and Kinetics, Ramada Inn-Downtown Dayton, Ohio, 10 - 13 October 1978

Science.gov (United States)

1978-10-13

Combustion in G.D. Smith, C.E. Peters High Speed Flows AEDC/ARO (PO-78-0012) 5:00 ADJOURN 6:30 Social Hour (Cash Bar) Ramada Inn Banquet 12 Oct. 78...which would sustain the instability structures observed in a number of problemA . During the initial phase of the development of the instabilities, the

Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

International Nuclear Information System (INIS)

Ooi, P.K.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.; Chen, W.L.

2011-01-01

Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

Science.gov (United States)

Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

2009-03-01

Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase

International Nuclear Information System (INIS)

Gonzalez, D; Lozano, J G; Herrera, M; Morales, F M; GarcIa, R; Ruffenach, S; Briot, O

2010-01-01

Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by transmission electron microscopy (TEM)-related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from the original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire mappings and RGB multilayered image reconstructions allows us to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zinc blende (zb) volumes, which act as the intermediate phase between the initial InN-w and the most stable cubic In 2 O 3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason for the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.

Sensibilidad postratamiento de blanquamiento dental con la solución de McInnes en pacientes con fluorosis dental grado TF4

OpenAIRE

Paredes Balseca, Jenny Carolina

2017-01-01

The dental sensibility is one of the problems caused by multiple factors, one of them is the posttreatment sensibility to the dental clearance, nevertheless it is the most used method at present in the persons who has dental fluorosis with the purpose of improving the color of the tooth and the esthetics, in the present investigation there was studied the behavior of the application of solution of McInnes in this type of teeth by relation to the sensibility Objective: To evaluate the degree o...

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Science.gov (United States)

Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

2015-05-01

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Energy Technology Data Exchange (ETDEWEB)

Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

2015-05-15

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Electrical transport in GaN and InN nanowires; Elektrischer Transport in GaN- und InN-Nanodraehten

Energy Technology Data Exchange (ETDEWEB)

Richter, Thomas Fabian

2008-12-19

This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. In the investigation of the GaN nanowires the main focus was the electrical transport in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The electrical transport in those wires is extremely diameter dependent. The dark current shows space charged limited current. With the help of those cognitions a diameter dependent transport model could be found. The transport phenomena in those wires is based on the diameter depending band bending at the edge of the wires caused by the Fermi level pinning inside the forbidden band. This model can be fit to the data with the three parameter doping, fermi level pinning and wire diameter. On the base of those effects a method to determine the doping concentration inside those wires without field effect measurements and contact resistance has been developed. The defect structure inside those wires has been analysed with the help of spectral photoluminescence measurements. Here several defect bands have been found and it was possible with help of several contacts on one single wire to determine different defect regions along the wire and to explain them by the lattice mismatch between nanowire and substrate. Further temperature depending measurements and investigations on Schottky contacted wires as well as on GaN wires with AlN tunnel structures complete the work on GaN. The electrical characterisation on a large scale of undoped and doped InN nanowires shows linear growth of the dark current with the diameter up to wires of around 100 nm

PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

Directory of Open Access Journals (Sweden)

Ángel Guillermo Félix Mendoza

2015-06-01

Full Text Available El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores y matriz de diagnóstico de fortalezas, oportunidades, debilidades y amenazas. En el estudio de mercado se analizaron los componentes de oferta y demanda del hotel, se determinaron algunas fallas en la denominación utilizada, según los criterios para la categorización hotelera manejada por el Ministerio de Turismo. En función del diagnóstico FODA, se generaron estrategias para el posicionamiento y comercialización del hotel. Mediante las encuestas realizadas a los huéspedes se pudo conocer el perfil del visitante que llega al hotel y se elaboró un plan publicitario, en el cual sobresale el logotipo y slogan, tríptico promocional, la promoción en página web y redes sociales. Se establecieron estrategias del mix para minimizar falencias operativas en el hotel. Se concluye que la principal nomenclatura utilizada no concuerda con los parámetros establecidos por el Ministerio de Turismo, por lo que se plantea reestructurar ciertas áreas específicas como la cantidad de habitaciones o cambiar la denominación a hostal.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

Directory of Open Access Journals (Sweden)

B. K. Barick

2015-05-01

Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

CERN Document Server

Klaiber Lodewigs, Jonas M

2003-01-01

The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

Molten Salt-Based Growth of Bulk GaN and InN for Substrates

Energy Technology Data Exchange (ETDEWEB)

Waldrip, Karen Elizabeth [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Power Sources Technology Dept.; Tsao, Jeffrey Yeenien [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Energy Sciences Dept.; Kerley, Thomas M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Dept.

2006-09-01

An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N^3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

International Nuclear Information System (INIS)

Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

2005-01-01

We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Beaulieu-Boycott-Innes syndrome: an intellectual disability syndrome with characteristic facies.

Science.gov (United States)

Casey, Jillian; Jenkinson, Allan; Magee, Alex; Ennis, Sean; Monavari, Ahmad; Green, Andrew; Lynch, Sally A; Crushell, Ellen; Hughes, Joanne

2016-10-01

We report a female child from an Irish Traveller family presenting with severe intellectual disability, dysmorphic features, renal anomalies, dental caries and cyclical vomiting. Current health issues include global developmental delay, mild concentric left ventricular hypertrophy, dental malocclusion and caries and a single duplex left kidney. The proband and her mother also have multiple epiphyseal dysplasia. Whole-exome sequencing was performed to identify the underlying genetic cause. DNA from the proband was enriched with the Agilent Sure Select v5 Exon array and sequenced on an Illumina HiSeq. Rare homozygous variants were prioritized. Whole-exome sequencing identified three linked homozygous missense variants in THOC6 (c.298T>A, p.Trp100Arg; c.700G>C, p.Val234Leu; c.824G>A, p.Gly275Asp) as the likely cause of this child's intellectual disability syndrome, resulting in a molecular diagnosis of Beaulieu-Boycott-Innes syndrome (BBIS). This is the first report of BBIS in Europe. BBIS has been reported previously in two Hutterite families and one Saudi family. A review of all patients to date shows a relatively homogenous phenotype. Core clinical features include low birth weight with subsequent growth failure, short stature, intellectual disability with language delay, characteristic facies, renal anomalies and dental malocclusion with caries. Some patients also have cardiac defects. All patients show characteristic dysmorphic facial features including a tall forehead with high anterior hairline and deep-set eyes with upslanting palpebral fissures. The coexistence of intellectual disability together with these characteristic facies should provide a diagnostic clue for BBIS during patient evaluation.

Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

Energy Technology Data Exchange (ETDEWEB)

Borges, P. D., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu; Scolfaro, L., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

2014-12-14

The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

Retrospective forecasts of the upcoming winter season snow accumulation in the Inn headwaters (European Alps)

Science.gov (United States)

Förster, Kristian; Hanzer, Florian; Stoll, Elena; Scaife, Adam A.; MacLachlan, Craig; Schöber, Johannes; Huttenlau, Matthias; Achleitner, Stefan; Strasser, Ulrich

2018-02-01

This article presents analyses of retrospective seasonal forecasts of snow accumulation. Re-forecasts with 4 months' lead time from two coupled atmosphere-ocean general circulation models (NCEP CFSv2 and MetOffice GloSea5) drive the Alpine Water balance and Runoff Estimation model (AWARE) in order to predict mid-winter snow accumulation in the Inn headwaters. As snowpack is hydrological storage that evolves during the winter season, it is strongly dependent on precipitation totals of the previous months. Climate model (CM) predictions of precipitation totals integrated from November to February (NDJF) compare reasonably well with observations. Even though predictions for precipitation may not be significantly more skilful than for temperature, the predictive skill achieved for precipitation is retained in subsequent water balance simulations when snow water equivalent (SWE) in February is considered. Given the AWARE simulations driven by observed meteorological fields as a benchmark for SWE analyses, the correlation achieved using GloSea5-AWARE SWE predictions is r = 0.57. The tendency of SWE anomalies (i.e. the sign of anomalies) is correctly predicted in 11 of 13 years. For CFSv2-AWARE, the corresponding values are r = 0.28 and 7 of 13 years. The results suggest that some seasonal prediction of hydrological model storage tendencies in parts of Europe is possible.

Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

Energy Technology Data Exchange (ETDEWEB)

Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

2016-09-15

Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

An Overview of the Geological and Geotechnical Aspects of the New Railway Line in the Lower Inn Valley

Science.gov (United States)

Eder, Stefan; Poscher, Gerhard; Sedlacek, Christoph

The new railway line in the lower Inn-valley is part of the Brenner railway axis from Munich to Verona (feeder north). The first section between the villages of Kundl and Radfeld, west of Wörgl, and the village of Baumkirchen, east of Innsbruck, will become one of the biggest infrastructure projects ever built in Austria, with a length of approx. 43 km and an underground portion of approx. 80%. The article gives an overview of the various geologic formations - hard rock sections in the valley slopes, different water-saturated gravel and sand formations in the valley floor and geotechnically difficult conditions in sediments of Quaternary terraces. It also describes the methodology of the soil reconnaissance using groundwater models for hydrogeologic estimations, core drillings for evaluating geologic models and describes the experiences gained from the five approx. 7.5 km long reconnaissance tunnels for geotechnical and hydrogeological testing. The results of the soil reconnaissance were used to plan different construction methods, such as excavation in soft rock under a jet grouting roof and compressed-air, as well as mechanised shield with fluid support.

Validation of a simple distributed sediment delivery approach in selected sub-basins of the River Inn catchment area

Science.gov (United States)

Reid, Lucas; Kittlaus, Steffen; Scherer, Ulrike

2015-04-01

For large areas without highly detailed data the empirical Universal Soil Loss Equation (USLE) is widely used to quantify soil loss. The problem though is usually the quantification of actual sediment influx into the rivers. As the USLE provides long-term mean soil loss rates, it is often combined with spatially lumped models to estimate the sediment delivery ratio (SDR). But it gets difficult with spatially lumped approaches in large catchment areas where the geographical properties have a wide variance. In this study we developed a simple but spatially distributed approach to quantify the sediment delivery ratio by considering the characteristics of the flow paths in the catchments. The sediment delivery ratio was determined using an empirical approach considering the slope, morphology and land use properties along the flow path as an estimation of travel time of the eroded particles. The model was tested against suspended solids measurements in selected sub-basins of the River Inn catchment area in Germany and Austria, ranging from the high alpine south to the Molasse basin in the northern part.

Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.

Energy Technology Data Exchange (ETDEWEB)

United States. Bonneville Power Administration.

1985-04-01

The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

Dgroup: DG01664 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available /INN) D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetical recombination) (JAN...) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetical recombination) (JAN) D0825...6 ... Nateplase (INN) D03695 ... Desmoteplase (USAN/INN) D04665 ... Lanoteplase (USAN/INN); Lanoteplase (genetical re...combination) (JAN) D09814 ... Silteplase (INN); Silteplase (genetical recombination) (JAN) D09823 ... Duteplase (INN); Duteplase (genetica... DG01664 DGroup Tissue plasminogen activator (t-PA) -teplase ... D02837 ... Alteplase (USP/INN); Alteplase (geneti

Dgroup: DG01707 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available gen activator (t-PA) ... D02837 ... Alteplase (USP/INN); Alteplase (genetical recombination) (JAN) ... D02947 ... Ani...streplase (USAN/INN) ... D05721 ... Reteplase (USAN/INN) ... D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetic...al recombination) (JAN) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetica... ... Lanoteplase (USAN/INN); Lanoteplase (genetical recombination) (JAN) ... D09814 ... Silteplase (INN); Silteplase (genetica...l recombination) (JAN) ... D09823 ... Duteplase (INN); Duteplase (genetical re

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dgroup: DG01709 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available omiparin (USAN); Semuloparin (USAN); Heparin (BAN) ... D02112 ... Heparin sodium (JP17/USP/INN); Parnaparin sodium... (INN) ... D04427 ... Heparin calcium (JP17); Nadroparin calcium (INN) ... D03674 ... Enoxaparin sodium (JAN/USAN/...INN) ... D04977 ... Parnaparin sodium (JP17) ... D02980 ... Ardeparin sodium (USAN/INN) ... D03337 ... Reviparin sodiu...m (JAN) ... D03353 ... Dalteparin sodium (JAN/USAN/INN) ... D03673 ... Deligoparin sodium... (USAN/INN) ... D06398 ... Tinzaparin sodium (USAN) ... D09860 ... Adomiparin sodium (USAN); Semuloparin sodium (USAN/INN); Ardeparin sodium

Distribution of air pollutants in the Inn Valley atmosphere during high concentration events in winter 2006

International Nuclear Information System (INIS)

Schnitzhofer, R.; Norman, M; Dunkl, J.; Wistaler, A.; Hansel, A.; Neininger, B.; Gohm, A.

2006-01-01

Full text: The goal of the INNOX field campaign, which took place during January and February 2006 near the town of Schwaz, was to obtain a three-dimensional picture of the spatial distribution of air pollutants in the Inn Valley during wintertime. For this purpose continuous ground based measurements and, on six chosen days, vertical profiles within the lowest 200 m above ground level (AGL) of the valley atmosphere of certain VOCs (benzene, toluene, etc.) and CO were performed using a proton-transfer-reaction mass spectrometry instrument (PTR-MS). For the soundings a 200-m long teflon line was fixed on a tethered balloon through which the air was sucked to the PTR-MS instrument and to a CO analyser. Next to the inlet on the tethered balloon meteorological data, such as air temperature, pressure, wind, were measured as well. Above the lowest 200 m AGL a research aircraft from MetAir AG (Switzerland), equipped with various instruments for in-situ measurements of air pollutants and meteorological data, was operated. A typical flight pattern consisted of five vertical cross sections between about 150 to 2500 m AGL and lasted about three hours. Altogether 25 hours of aircraft measurements were carried out on six different days. The combination of low-level balloon measurements and upper-level aircraft observations yields vertical profiles of various parameters which cover the whole valley atmosphere. Preliminary results which show strong vertical but also horizontal gradients of air pollutant concentrations will be presented. (author)

Dgroup: DG01493 [KEGG MEDICUS

Lifescience Database Archive (English)

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Lifescience Database Archive (English)

Full Text Available copolamine butylbromide (JP17) ... D01463 ... Diponium bromide (JAN/INN) D01491 ... Butropium bromide (JP17/INN) ... ...ide (JP17/INN) D01875 ... Tiquizium bromide (JAN/INN) ... D01929 ... Tiotropium bromide ...hydrate (JAN) ... D01946 ... Oxitropium bromide (JAN/INN) D01976 ... N-Methylscopolamine methylsulfate (JAN) ... D02212 ... Ipratropium... bromide (USAN); Ipratropium bromide hydrate (JP17) ... D02417 ... Flutropium bromide (JAN) D025...N/USAN/INN) ... D08838 ... Acotiamide hydrochloride (USAN); Acotiamide hydrochloride hydrate (JAN) ... D09402 ... Darotropium bromide (USAN/INN) Neuropsychiatric agent ...

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Lifescience Database Archive (English)

Full Text Available N) ... D03077 ... Benazeprilat (USAN/INN) D03440 ... Ceronapril (USAN/INN) D03756 ... Indolapril hydrochloride (USAN) ... (USAN) ... D00383 ... Trandolapril (JAN/INN) ... DG00342 ... Spirapril ... D08529 ... Spirapril (INN) ... D03765 ... Spirapril ...USAN); Cilazapril hydrate (JP17) ... DG00341 ... Fosinopril ... D07992 ... Fosinopril (INN) ... D00622 ... Fosinopril sodium

Dgroup: DG01718 [KEGG MEDICUS

Lifescience Database Archive (English)

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Lifescience Database Archive (English)

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Lifescience Database Archive (English)

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Lifescience Database Archive (English)

Full Text Available DG01554 DGroup 5-Nitrofuran antiprotozoal nifur- ... D00830 ... Furazolidone (USP/INN) D... Nifuroxime (INN) D04714 ... Levofuraltadone (USAN/INN) D05165 ... Nifursemizone (USAN/INN) D05166 ... Nifursol (USAN) Antiparasitic ... Antiprotozoals ...

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Lifescience Database Archive (English)

Full Text Available 03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... C... ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flurocitabine (USAN/INN)

Dgroup: DG01958 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available USP) ... D03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG...Enocitabine (JAN/INN) ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flu

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Directory of Open Access Journals (Sweden)

Tsokkou Demetra

2009-01-01

Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

Dgroup: DG01439 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... Cytarabine ... D00168 ... ...tabine hydrochloride (JAN) D04134 ... Fazarabine (USAN/INN) D04233 ... Flurocitabine (USAN/INN) D06100 ... Tezacitabi

Dgroup: DG01458 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01458 DGroup Carbapenem -penem DG01458.gif DG00591 ... Meropenem ... D08185 ... Meropenem (INN) ... D02222 ... Meropene...m (USP); Meropenem hydrate (JP17) ... DG00592 ... Ertapenem ... D07908 ... Ertapenem (INN) ... D04049 ... Ertapene...m sodium (USAN) ... DG00593 ... Doripenem ... D03895 ... Doripenem (USAN/INN) ... D01836 ... Doripenem hydr...ate (JAN) ... DG01212 ... Imipenem ... D04515 ... Imipenem (INN) ... D00206 ... Imipenem (USP); Imipene...m hydrate (JP17) D01048 ... Panipenem (JP17/INN) D01057 ... Biapenem (JAN/USAN/INN) ... D01058 ... Lenapenem hyd

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Dgroup: DG01716 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01716 DGroup Drugs for alcohol dependence ... DG00996 ... Acamprosate ... D07058 ... Acamprosate (INN) ... D02780 ... Acamprosate calcium (JAN/USAN) ... DG00997 ... Naltrexone ... D05113 ... Naltrexone (USAN/INN) ... D02095 ... Naltrexone hydrochloride (USP) ... DG00998 ... Nalmefene ... D05111 ... Nalmefene (USAN/INN) ... D02104 ... Nalmefene hydrochloride ... D10812 ... Nalmefene hydrochloride hydrate (JAN) DG01756 ... Ondelopran ... D10143 ... Ondelopran (USAN/INN) ... D10144 ... Ondelopran hydrochloride (USAN) D00123 ... Cyanamide (JP17) ... D00131 ... Disulfiram (JP17/USP/INN) ... D03288 ... Calcium carbimide (INN) Other ... DG01718 ... Drugs for addictive disorder ATC code: N07BB Drugs of addictive disorder ...

Dgroup: DG01620 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01620 DGroup Tamoxifene-type antineoplastic -ifen(e) ... DG00734 ... Tamoxifen ... D08559 ... Tam...oxifen (INN) ... D00966 ... Tamoxifen citrate (JP17/USP) ... DG00735 ... Toremifene ... D08620 ... Toremifene (INN) ... D0...USAN/INN) D09380 ... Sivifene (USAN/INN) Other ... DG01619 ... Clomifene and tamoxifen derivative ... Antiestrogens or e

Dgroup: DG01465 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08064 ... Ifenprodil (INN) ... D01445 ... Ifenprodil tartrate (JP17); Ifenprodil tartrate fine granules (JP17); Ifenprodil tartrate tablet...NN) ... D00560 ... Pimozide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablet...s (JP17); Naftopidil orally disintegrating tablets (JP17) ... D019

Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

International Nuclear Information System (INIS)

Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

2008-01-01

The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dgroup: DG01936 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01936 DGroup TNF inhibitor ... D00742 ... Etanercept (USAN/INN); Etanercept (genetica...l recombination) (JAN); Etanercept (genetical recombination) [etanercept biosimilar 1] (JAN) ... D02598 ... Infl...iximab (USAN/INN); Infliximab (genetical recombination) (JAN); Infliximab (genetical recombination) [Inflixi...mab biosimilar1] (JAN); Infliximab (genetical recombination) [Infliximab biosimil...ar2] (JAN) ... D07436 ... Afelimomab (INN) D02597 ... Adalimumab (USAN/INN); Adalimumab (genetical recombination) (

Dgroup: DG01645 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available done (INN) ... D08122 ... Levomethadone hydrochloride DG01015 ... Hydroxychloroquine ... D08050 ... Hydroxychloroquine (INN) ... D02114 ... Hydroxychloroq...uine sulfate (JAN/USP) ... DG01021 ... Halofantrine ... D08033 ... Halofantrine (INN) ... D02485

The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

International Nuclear Information System (INIS)

Mohammad, Rezek; Katircioglu, Senay

2009-01-01

The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

Dgroup: DG02000 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available AN/INN) DG01828 ... Deleobuvir ... D10554 ... Deleobuvir (USAN/INN) ... D10622 ... Deleobuvir sodium (JAN/USAN) D10477 ... Mericitabine (USAN/INN) Antiviral ... Treatment of hepatitis C NS5B polymerase ...

Dgroup: DG01752 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available (USAN/INN); Interferon alfa-2a (genetical recombination) (JAN) ... D02745 ... Interferon alfa-2b (USAN); Interferon alfa-2b (genetica... Interferon alfa-n3 (USAN) DG01751 ... Interferon beta ... D00746 ... Interferon beta-1b (USAN/INN); Interferon beta-1b (genetica...D00747 ... Interferon gamma-1b (USAN/INN) ... D03357 ... Interferon gamma-1a (genetical recombination) (JAN) ... D...08805 ... Interferon gamma-n1 (JAN) D02744 ... Interferon alfacon-1 (USAN/INN); Interferon alfacon-1 (genetical re...combination) (JAN) D02747 ... Peginterferon alfa-2a (USAN/INN); Peginterferon alfa-2a (genetica

Dgroup: DG01642 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 7/USAN/INN); Fluconazole capsules (JP17) ... D01429 ... Fosfluconazole (JAN/INN) ... DG00375 ... Terbinafine ... D02375 ... Terbinafine... (USAN/INN) ... D02219 ... Terbinafine hydrochloride (JP17/USP) ... DG00441 ... Diclofenac ... D07816 ... Dicl

Dgroup: DG01636 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available analogue, fast-acting ... D04477 ... Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... ... ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genetical recombination) (JAN) ... D04540 ... Insulin glu...lisine (USAN/INN); Insulin glulisine (genetical recombination) (JAN) ... DG01797 ... Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombinat...ion) (JP17); Insulin glargine (genetical recombination) injection (JP17); Insulin glargine (genetical recomb

Dgroup: DG01801 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genet...ical recombination) (JAN) ... D04540 ... Insulin glulisine (USAN/INN); Insulin glulisine (genetica...250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombination) (JP17); Insulin glargine (genetica...l recombination) injection (JP17); Insulin glargine (genetical recombination [Insulin glargin biosimilar ...1] (JAN); Insulin glargine (genetical recombination) [Insulin glargin biosimilar

Dgroup: DG01754 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ... Taranabant (USAN/INN) D09349 ... Ibipinabant (USAN/INN) D10314 ... Giminabant (USAN/INN) Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ATC code: A08AX Antiobesity agents CNR1 [HSA:1268] [KO:K04277] ...

Dgroup: DG01466 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available granules (JP17); Ifenprodil tartrate tablets (JP17) ... DG00320 ... Labetalol ... D08106 ... Labetalol (INN) ... D... ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablets (JP17); Naftopidil orally disintegrating tablet

Dgroup: DG01592 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available e (INN) ... D00633 ... Dopamine hydrochloride (JP17/USP) ... DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bupivacaine... hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... D00059 ... Levodopa (JP17/USP/INN) ... Cardiovascular agent ...

Dgroup: DG00177 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00177 Chemical ... DGroup Erythropoietin ... D03231 ... Epoetin alfa (USAN/INN); Epoetin... alfa (genetical recombination) (JP17) ... D03232 ... Epoetin beta (USAN/INN); Epoetin beta (genetical recombina...tion) (JP17) ... D04032 ... Epoetin delta (USAN) D09737 ... Epoetin kappa (INN); Epoetin kappa (genetical recombination) (Epoet...in alfa biosimilar 1) (JAN) ... D09998 ... Epoetin beta pegol (genetical ...recombination) (JAN) ... D10000 ... Epoetin epsilon (INN); Epoetin epsilon (genetical recombination) (JAN) D10846 ... Epoet

Design and analysis of InN - In0.25Ga0.75N single quantum well laser for short distance communication wavelength

Science.gov (United States)

Polash, Md. Mobarak Hossain; Alam, M. Shah; Biswas, Saumya

2018-03-01

A single quantum well semiconductor laser based on wurtzite-nitride is designed and analyzed for short distance communication wavelength (at around 1300 nm). The laser structure has 12 Å well layer of InN, 15 Å barrier layer of In0.25Ga0.75N, and 54 Å separate confinement heterostructure layer of GaN. To calculate the electronic characteristics of the structure, a self-consistent method is used where Hamiltonian with effective mass approximation is solved for conduction band while six-bands Hamiltonian matrix with k · p formalism including the polarization effect, valence-band mixing effect, and strain effect is solved for valence band. The interband optical transition elements, optical gain, differential gain, radiative current density, spontaneous emission rate, and threshold characteristics have been calculated. The wave function overlap integral is found to be 45.93% for TE-polarized structure. Also, the spontaneous emission rate is found to be 6.57 × 1027 s - 1 cm - 3 eV - 1 at 1288.21 nm with the carrier density of 5 × 1019 cm - 3. Furthermore, the radiative current density and the radiative recombination rate are found to be 121.92 A cm - 2 and 6.35 × 1027 s - 1 cm - 3, respectively, while the TE-polarized optical gain of the structure is 3872.1 cm - 1 at 1301.7 nm.

Dgroup: DG01986 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01986 DGroup Estrogen ... DG00461 ... Ethinylestradiol ... D00554 ... Ethinyl estradiol (US...P); Ethinylestradiol (JP17/INN) ... D07928 ... Ethinylestradiol propanesulfonate DG00462 ... Estradiol ... D00105 ... Estr...adiol (JAN/USP/INN) ... D01413 ... Estradiol valerate (JAN/USP/INN) ... D01617 ... Estradiol dipropionate (JAN) ... D01953 ... Estr...adiol benzoate (JP17) ... D04061 ... Estradiol acetate (USAN) ... D04063 ... Estr...adiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) ... D04065 ... Estradiol undecylate (USAN/INN) ... D07918 ... Estr

A new perspective on soil erosion: exploring a thermodynamic approach in a small area of the River Inn catchment

Science.gov (United States)

Reid, Lucas; Scherer, Ulrike; Zehe, Erwin

2016-04-01

Soil erosion modeling has always struggled with compensating for the difference in time and spatial scale between model, data and the actual processes involved. This is especially the case with non-event based long-term models based on the Universal Soil Loss Equation (USLE), yet USLE based soil erosion models are among the most common and widely used for they have rather low data requirements and can be applied to large areas. But the majority of mass from soil erosion is eroded within short periods of times during heavy rain events, often within minutes or hours. Advancements of the USLE (eg. the Modified Universal Soil Loss Equation, MUSLE) allow for a daily time step, but still apply the same empirical methods derived from the USLE. And to improve the actual quantification of sediment input into rivers soil erosion models are often combined with a Sediment Delivery Ratio (SDR) to get results within the range of measurements. This is still a viable approach for many applications, yet it leaves much to be desired in terms of understanding and reproducing the processes behind soil erosion and sediment input into rivers. That's why, instead of refining and retuning the existing methods, we explore a more comprehensive, physically consistent description on soil erosion. The idea is to describe soil erosion as a dissipative process (Kleidon et al., 2013) and test it in a small sub-basin of the River Inn catchment area in the pre-Alpine foothills. We then compare the results to sediment load measurements from the sub-basin and discuss the advantages and issues with the application of such an approach.

Osoba niepełnosprawna - inne rodzicielstwo, inne braterstwo?

OpenAIRE

Stelter, Żaneta

2012-01-01

Urodzenie dziecka niepełnosprawnego, to wydarzenie, które ma wpływ na jakość życia rodziny. W artykule przedstawiono w jaki sposób niepełnosprawność dziecka określa sytuację życiową pozostałych członków rodziny. Opisano specyfikę realizacji ról rodzicielskich w rodzinie z dzieckiem niepełnosprawnym oraz przeanalizowano sytuacje psychospołeczną zdrowego rodzeństwa.

Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

Directory of Open Access Journals (Sweden)

Wei-Chun Chen

2012-01-01

Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

InN-based layers grown by modified HVPE

International Nuclear Information System (INIS)

Syrkin, A.; Usikov, A.; Soukhoveev, V.; Kovalenkov, O.; Ivantsov, V.; Dmitriev, V.; Collins, C.; Readinger, E.; Shmidt, N.; Davydov, V.; Nikishin, S.; Kuryatkov, V.; Song, D.; Rosenbladt, D.; Holtz, Mark

2006-01-01

This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750 and ordm;C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002)InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nano-rods and 460 arcsec for the continuous layers. In x Ga 1-x N layers with InN content up to 10 mol.% are grown on GaN/sapphire templates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

Directory of Open Access Journals (Sweden)

Saima Zaman

2013-10-01

Full Text Available Low-dimensional InN/InGaN quantum dots (QDs are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications.

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

Science.gov (United States)

Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

2013-01-01

Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

Dgroup: DG01781 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available grastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (genetical recombination) [Filgr...astim biosimilar 1] (JAN); Filgrastim (genetical recombination) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetica...USAN/INN); Lenograstim (genetical recombination) (JP17) ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetica...l recombination) (JAN) ... D10242 ... Lipegfilgrastim (USAN) D03245 ... Nartograstim (genetical recombination) (...l recombination) [Filgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (

Dgroup: DG01797 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ical recombination) (JP17); Insulin glargine (genetical recombination) injection (J...P17); Insulin glargine (genetical recombination [Insulin glargin biosimilar 1] (JAN); Insulin glargine (genetica...mir (USAN/INN); Insulin detemir (genetical recombination) (JAN) ... D09727 ... Insulin degludec (USAN/INN); Insulin degludec (genetica... DG01797 DGroup Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genet

Dgroup: DG01753 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ocyte colony stimulating factor (G-CSF) ... D03235 ... Filgrastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (gene...tical recombination) [Filgrastim biosimilar 1] (JAN); Filgrastim (genetical recombi...nation) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetical recombination) [Fi...lgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (USAN/INN); Lenograstim (genetical recombination) (JP17)... ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetical recombination) (JAN) ... D10242 ... Lipegfilgrastim

Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

Energy Technology Data Exchange (ETDEWEB)

Abdulmalik, Osheiza [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena [Virginia Commonwealth University, Richmond, VA 23298 (United States); Chen, Qiukan; Yang, Jisheng [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Nnamani, Ijeoma [Duke University Medical Center, Durham, NC 27710 (United States); Danso-Danquah, Richmond [Virginia Commonwealth University, Richmond, VA 23298 (United States); Eseonu, Dorothy N. [Virginia Union University, Richmond, VA 23220 (United States); Asakura, Toshio [Duke University Medical Center, Durham, NC 27710 (United States); Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K., E-mail: msafo@vcu.edu [Virginia Commonwealth University, Richmond, VA 23298 (United States); The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States)

2011-11-01

Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization.

Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

International Nuclear Information System (INIS)

Abdulmalik, Osheiza; Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena; Chen, Qiukan; Yang, Jisheng; Nnamani, Ijeoma; Danso-Danquah, Richmond; Eseonu, Dorothy N.; Asakura, Toshio; Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K.

2011-01-01

Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization

Attitudes of physicians and pharmacists towards International Non-proprietary Name prescribing in Belgium.

Science.gov (United States)

Van Bever, Elien; Elseviers, Monique; Plovie, Marijke; Vandeputte, Lieselot; Van Bortel, Luc; Vander Stichele, Robert

2015-03-01

International Non-proprietary Name (INN) prescribing is the use of the name of the active ingredient(s) instead of the brand name for prescribing. In Belgium, INN prescribing began in 2005 and a major policy change occurred in 2012. The aim was to explore the opinions of Dutch-speaking general practitioners (GPs) and pharmacists. An electronic questionnaire with 39 five-point Likert scale statements and one open question was administered in 2013. Multivariate analysis was performed with multiple linear regression on a sum score for benefit statements and for drawback statements. Answers to the open question were qualitatively analysed. We received 745 valid responses with a representable sample for both subgroups. Participants perceived the motives to introduce INN prescribing as purely economic (to reduce pharmaceutical expenditures for the government and the patient). Participants accepted the concept of INN prescribing, but 88% stressed the importance of guaranteed treatment continuity, especially in older, chronic patients, to prevent patient confusion, medication non-adherence and erroneous drug use. In conclusion, the current way in which INN prescribing is applied in Belgium leads to many concerns among primary health professionals about patient confusion and medication adherence. Slightly adapting the current concept of INN prescribing to these concerns can turn INN prescribing into one of the major policies in Belgium to reduce pharmaceutical expenditures and to stimulate rational drug prescribing. © 2014 Nordic Association for the Publication of BCPT (former Nordic Pharmacological Society).

MEG source localization using invariance of noise space.

Directory of Open Access Journals (Sweden)

Junpeng Zhang

Full Text Available We propose INvariance of Noise (INN space as a novel method for source localization of magnetoencephalography (MEG data. The method is based on the fact that modulations of source strengths across time change the energy in signal subspace but leave the noise subspace invariant. We compare INN with classical MUSIC, RAP-MUSIC, and beamformer approaches using simulated data while varying signal-to-noise ratios as well as distance and temporal correlation between two sources. We also demonstrate the utility of INN with actual auditory evoked MEG responses in eight subjects. In all cases, INN performed well, especially when the sources were closely spaced, highly correlated, or one source was considerably stronger than the other.

Dgroup: DG01358 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01358 Chemical ... DGroup Trastuzumab ... D03257 ... Trastuzumab (INN); Trastuzumab (genetica...l recombination) (JAN) ... D09980 ... Trastuzumab emtansine (USAN/INN); Trastuzumab emtansine (genetical re

Dgroup: DG01456 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomidine... (INN) ... D03702 ... Detomidine hydrochloride (USAN) ... DG0132

Dgroup: DG01613 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01613 DGroup Xantine-type antiparkinsonian agent -fylline ... D02964 ... Apaxifylline ...(USAN/INN) D04641 ... Istradefylline (JAN/USAN/INN) ... Neuropsychiatric agent ... DG01967 ... Antiparkinson agent ...

Dgroup: DG01789 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ) DG01442 ... Tedizolid ... D09685 ... Tedizolid (USAN/INN) ... D09686 ... Tedizolid phosphate (JAN/USAN) ... D10167 ... Sutezolid (USAN/INN) Antibacterial ... Antibiotics 50S ribosomal subunit ...

Dgroup: DG01644 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available xetine ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine...0967 ... Dexamfetamine ... D03740 ... Dextroamphetamine (USAN); Dexamfetamine (INN) ... D02078 ... Dextroamphetamine sulfate (USP) ... DG00970 ... Atomo

Dgroup: DG01584 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01584 DGroup Estrogen receptor agonist -estr- ... DG00461 ... Ethinylestradiol ... D00554... ... Ethinyl estradiol (USP); Ethinylestradiol (JP17/INN) ... D07928 ... Ethinylestradiol propanesulfonate DG00462 ... Estradiol ... D00105 ... Estr...adiol (JAN/USP/INN) ... D01413 ... Estradiol valerate (JAN/USP/INN) ... D01617 ... Estrad...iol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) ... D04061 ... Estradiol a...cetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) ... D04065 ... Estradio

Changes to International Nonproprietary Names for antibody therapeutics 2017 and beyond: of mice, men and more.

Science.gov (United States)

Parren, Paul W H I; Carter, Paul J; Plückthun, Andreas

Active pharmaceutical substances require an International Nonproprietary Name (INN) assigned by the World Health Organization (WHO) to obtain market authorization as a medicinal product. INNs are selected to represent a unique, generic name for a drug enabling unambiguous identification by stakeholders worldwide. INNs may be requested after initiating clinical development of an investigational drug. Pharmaceutical classes are indicated by a common stem or suffix. Currently, INNs for monoclonal antibody-based drugs are recognized by the suffix, -mab, preceded by a source infix such as -xi- (chimeric), -zu- (humanized) or -u- (human) designating the species from which the antibody was derived. However, many technological advances have made it increasingly difficult to accurately capture an antibody's source in its name. In 2014, the WHO and the United States Adopted Names (USAN) Council approached this challenge by implementing changes to antibody source infix definitions. Unfortunately, gaps and ambiguities in the definitions and procedures resulted in inconsistent source category assignments and widespread confusion. The Antibody Society, extensively supported by academic and industry scientists, voiced concerns leading to constructive dialog during scheduled consultations with WHO and USAN Council representatives. In June 2017, the WHO announced that use of the source infix will be discontinued for new antibody INNs effective immediately. We fully support this change as it better aligns antibody INNs with current and foreseeable future innovations in antibody therapeutics. Here we review the changes implemented. Additionally, we analyzed antibody INNs recently assigned under the previous 2014 definitions and provide recommendations for further alignment.

Dgroup: DG01704 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D05454 ... Phenmetrazine hydrochloride (USP) D07114 ... Etilamfetamine (INN) D07115 ... Clobenzorex (INN) Other ... DG01706 ... Antiobesity ... DG01705 ... Anoretic ATC code: A08AA Anoretics ...

Dgroup: DG01970 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ylphenidate (USAN/INN) ... D01296 ... Methylphenidate hydrochloride (JAN/USP) ... DG00970 ... Atomoxetine... ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine hydrochloride (JAN/USP) ... DG00972 ... De

Dgroup: DG01967 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available de (INN) ... D00502 ... Pergolide mesylate (USP); Pergolide mesilate (JAN) ... D07836 ... Dihydroergocryptine mesilate DG00862 ... Ropini...role ... D08489 ... Ropinirole (USAN/INN) ... D00784 ... Ropinirole hydrochlo

Development of Advanced Ill-Nitride Materials

Science.gov (United States)

2008-09-24

tant to note that growth conditions have little effect on In- vacancy concentration as determined by positron annihilation spectroscopy .27 The In... applications in de- vices. These limitations are in part caused by an electron accumulation layer at the InN surface due to surface Fermi level pinning in the...conduction band,1 restricting the fabrica- tion of p-type InN layers.2 To facilitate pure p-type InN and drive research toward device applications

Dgroup: DG01639 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available amine ... D07984 ... Fluvoxamine (INN) ... D00824 ... Fluvoxamine maleate (JP17/USAN) ... DG00947 ... Escitalopram ... D07913 ... Escitalopram... (INN) ... D02567 ... Escitalopram oxalate (JAN/USAN) ... DG00951 ... Mianserin

Dgroup: DG01975 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 91 ... Enprostil (JAN/USAN/INN) D01451 ... Scopolamine butylbromide (JP17) ... DG02008 ... Gastric mucosal protectant ... DG00025 ... Sucralfate... ... C07314 ... Sucralfate ... D00446 ... Sucralfate (USP/INN); Sucralfate

Dgroup: DG01703 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available AN) DG01610 ... Xanthine-type cardiotonics ... D07151 ... Cafedrine (BAN) ... D07155 ... Theodrenaline (INN) ... D07933 ... Etofy... ... Ciclafrine hydrochloride (USAN) ... D07150 ... Gepefrine (INN) ... D07151 ... Cafedrine (BA

Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

2007-01-01

The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

Dgroup: DG01675 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available aine ... D01152 ... Oxethazaine (JP17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride ... DG00801 ... Bupivacaine ... D07552 ... Bupiva...caine (USAN/INN) ... D01450 ... Bupivacaine hydrochloride (USP); Bupivacaine hydrochl

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

无

2011-01-01

Holiday Inn Central Plaza Beijing Tyrone Tang is the newly appointed general manager of Holiday Inn Central Plaza, Beijing.Tang joined IHGin2002.He was transferred from the position of operations manager.

Dgroup: DG01720 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available P17); Cyclophosphamide tablets (JP17) ... DG01514 ... Palifosfamide ... D09364 ... Palifosfamide (USAN/INN) ... D10373 ... P...yclophosphamide ... D07760 ... Cyclophosphamide (INN) ... D00287 ... Cyclophosphamide (USP); Cyclophosphamide hydrate (J

Dgroup: DG01673 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available P17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bup...ivacaine hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... DG00802 ...

Dgroup: DG01655 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 130 ... Apraclonidine ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomi...dine (INN) ... D03702 ... Detomidine hydrochloride (USAN) DG01320 ... Medetomidine ... D08165 ...

Dgroup: DG00462 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00462 Chemical ... DGroup Estradiol ... D00105 ... Estradiol (JAN/USP/INN) ... D01413 ... Estr...adiol valerate (JAN/USP/INN) ... D01617 ... Estradiol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) D04061 ... Estr...adiol acetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) D04065 ... Estr...adiol undecylate (USAN/INN) D07918 ... Estradiol hemihydrate D07919 ... Estr...adiol 17 beta-hemisuccinate Other ... DG01584 ... Estrogen receptor agonist ... DG01986 ... Estrogen Cyp substrate ... DG0

Dgroup: DG01600 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01600 DGroup Bisphosphonate -dronic acid, -dronate ... DG00780 ... Etidronic acid ... D02373 ... Etidron...ic acid (USAN/INN) ... D00314 ... Etidronate disodium (JP17/USP) ... DG00781 ... Clodronic acid ... D03545 ... Clodron...ic acid (USAN/INN) ... D03544 ... Clodronate disodium (USAN); Sodium clodronate hydrate (JAN) ... D07720 ... Clodron...ic acid disodium salt DG00782 ... Pamidronic acid ... D07281 ... Pamidronic acid (INN) ... D00941 ... Pamidron...ate disodium (USAN); Pamidronate disodium hydrate (JAN) ... DG00783 ... Alendronic acid ... D07119 ... Alendron

Dgroup: DG01495 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available n (USAN/INN) ... D00626 ... Candesartan cilexetil (JP17/USAN) ... D00627 ... Telmisartan (JP17/USAN/INN); Telmisartan tablet...N); Olmesartan medoxomil tablets (JP17) ... DG00351 ... Azilsartan ... D08864 ... Azilsarta

Dgroup: DG01683 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available /INN) D05739 ... Rivoglitazone (USAN/INN) Antidiabetic agent ... DG01685 ... Insulin sensitizer ... DG01795 ... PPAR gamma... agonist Other ... DG01733 ... PPAR agonist Unclassified ... DG02044 ... Hypoglycemics ATC code: A10BG Antidiabetic

Dgroup: DG01794 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available rtugliflozin (USAN/INN) D10669 ... Sotagliflozin (USAN/INN) Antidiabetic agent Uncla...ssified ... DG02044 ... Hypoglycemics ATC code: A10BK Antidiabetics SLC5A2 (SGLT2) [HSA:6524] [KO:K14382] ...

Dgroup: DG01567 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available am (JP17/USP/INN) ... D00280 ... Clonazepam (JP17/USP/INN); Clonazepam fine granules (JP17); Clonazepam tablets ...N); Etizolam fine granules (JP17); Etizolam tablets (JP17) ... D01593 ... Nimetazepam

78 FR 29374 - National Institute of Environmental Health Sciences Amended; Notice of Meeting

Science.gov (United States)

2013-05-20

....m. to June 6, 2013, 05:00 p.m., Hilton Garden Inn Durham Southpoint Hotel, 7007 Fayetteville Road... meeting location from the Hilton Garden Inn Durham Southpoint Hotel to the DoubleTree by Hilton Hotel. The...

Dgroup: DG01573 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ate semisodium (INN) ... D00710 ... Valproate sodium (USAN); Sodium valproate (JP17) ... D08667 ... Calcium valproate DG01006 ... Flunar...izine ... D07971 ... Flunarizine (INN) ... D01303 ... Flunarizine hydrochloride (JAN/USAN) DG01382 ... E

Dgroup: DG01430 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01430 Chemical ... DGroup Paclitaxel ... D00491 ... Paclitaxel (JAN/USP/INN) ... D05333 ... Paclitax...el poliglumex (USAN/INN) ... Antineoplastics, taxane TUBB [HSA:10381 10382 10383 203068 347688 347733 7280 81027 84617] [KO:K07375] ...

Dgroup: DG01630 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01630 DGroup beta-Estrogen receptor agonist -berel ... D06631 ... Prinaberel (USAN/INN...) D09899 ... Erteberel (USAN/INN) Other ... DG01584 ... Estrogen receptor agonist ... NR3A2 (ESR2) [HSA:2100] [KO:K08551] ...

Concept of restaurant reservations information system

OpenAIRE

Štok, Janez

2016-01-01

In our home place we have only one inn. It's occupied mostly from Italian guests. Times are changing and buying power of Italians has declining since world financial collapse. Some fellow villagers has got an idea to rent some rooms for tourists. Inn is popular choice among guests, because is in walking distance of rooms. There is a problem with knowledge of languages, with that in mind owner of inn decided to contact me and explain the problem. There is need to create some sort of Android ap...

Dgroup: DG01152 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01152 Chemical ... DGroup Edetate ... D00052 ... Edetic acid (NF/INN) D00571 ... Edetate calcium disodium... anhydrous (USP) D01802 ... Edetate disodium (USP); Disodium edetate hydrate (JP17) D03943 ... Edetate calcium disodium... (USP); Calcium sodium edetate hydrate (JP17); Sodium calcium edetate (INN) ... D03944 ... Ed...etate dipotassium (USAN) D03945 ... Disodium edetate D03946 ... Edetate sodium (USAN) D03947 ... Edetate trisodium... (USAN) D07934 ... Edetate calcium disodium D07935 ... Dicobalt edetate (INN) Other ... DG01692 ... Chelator ATC code: V03AB03 Antidotes, Chelating agents ...

Novel transformation-based response prediction of shear building ...

Indian Academy of Sciences (India)

c Indian Academy of Sciences ... structural response of multi-storey shear buildings subject to earthquake motion. The INN is first ... China has been presented by Xie et al. (2011). ... research works have been done using INN in other fields.

The Place Where Hope Lives

Science.gov (United States)

... Inn at NIH comforts kids and their families. Children need the comfort and security of their families—especially when they are being treated for a life-threatening illness far from home. The Children's Inn is a private, non-profit, family-centered ...

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

2007-01-01

Holiday Inn Chang An West Beijing On March 28,Conformity Assessment Services Co.under China Certification and Inspection Group held a grand ceremony to award certificates to Holiday Inn Chang An West Beijing,which has successfully passed the four managem

Dgroup: DG01455 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ... D05206 ... Norepinephrine bitartr...USP); Isoprenaline sulfate (JAN) ... D02150 ... l-Isoprenaline hydrochloride (JP17) ... DG00212 ... Norepinephrine ... D00076 ... Noradrenaline...DG00212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ...

En ny flugt ind i skoven

DEFF Research Database (Denmark)

Haarder, Jon Helt

2008-01-01

Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner......Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner...

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing

2015-11-21

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

InN-based heterojunction photodetector with extended infrared response

KAUST Repository

Hsu, Lung-Hsing; Kuo, Chien-Ting; Huang, Jhih-Kai; Hsu, Shun-Chieh; Lee, Hsin-Ying; Kuo, Hao-Chung; Lee, Po-Tsung; Tsai, Yu-Lin; Hwang, Yi-Chia; Su, Chen-Feng; He, Jr-Hau; Lin, Shih-Yen; Cheng, Yuh-Jen; Lin, Chien-Chung

2015-01-01

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

HOTEL INFORMATION

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

The Holiday Inn Beijing Focus Square Holiday Inn Beijing Focus Square is the newest and tallest international mid-scale hotel at Wangjing’s famous business hub which is within walking distance of many multinational companies and surrounded by a variety of dining and shopping outlets.

VIKOR Method for Interval Neutrosophic Multiple Attribute Group Decision-Making

Directory of Open Access Journals (Sweden)

Yu-Han Huang

2017-11-01

Full Text Available In this paper, we will extend the VIKOR (VIsekriterijumska optimizacija i KOmpromisno Resenje method to multiple attribute group decision-making (MAGDM with interval neutrosophic numbers (INNs. Firstly, the basic concepts of INNs are briefly presented. The method first aggregates all individual decision-makers’ assessment information based on an interval neutrosophic weighted averaging (INWA operator, and then employs the extended classical VIKOR method to solve MAGDM problems with INNs. The validity and stability of this method are verified by example analysis and sensitivity analysis, and its superiority is illustrated by a comparison with the existing methods.

Lodging in Boulder and Louisville, Colorado | NREL

Science.gov (United States)

Leadership Community Education Center Economic Impact Environment, Health, & Safety Sustainability Energy : 720-587-3014 Comfort Inn 1196 W. Dillon Road Louisville, CO 80027 Phone: 303-604-0181 Courtyard by Marriott 948 West Dillon Road Louisville, CO 303-604-0007 Hampton Inn 912 W. Dillon Road Louisville, CO

Something of Value: How Franchise Sellers Make Training Pay

Science.gov (United States)

Berger, Gladys

1975-01-01

Training can be the most important benefit included in the purchase of a franchise. Several of these training programs used by franchise sellers (Castro Convertibles, Roto-Rooter, H and R Block, Dunhill Personnel Systems Inc., Carvel, Holiday Inns, Sheraton Inns Inc., McDonald's) are discussed. (Author/BP)

Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

International Nuclear Information System (INIS)

Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

2012-01-01

Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

76 FR 12340 - Gulf of Mexico Fishery Management Council; Public Meetings

Science.gov (United States)

2011-03-07

...: Tuesday, March 22, 2011, Hilton St. Petersburg Carillon Parkway, 950 Lake Carillon Drive, St. Petersburg...., Key West, FL, telephone: (305) 295-5000; Monday, March 28, 2011, Hilton Garden Inn, 4535 Williams Blvd., Kenner, LA, telephone: (504) 712-0504 Tuesday, March 29, 2011, Hilton Garden Inn, 14108 Airport Rd...

Journal of Earth System Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

Present paper uses powerful technique of interval neural network (INN) to simulate and estimate structural response of multi-storey shear buildings subject to earthquake motion. The INN is first trained for a real earthquake data, viz., the ground acceleration as input and the numerically generated responses of different ...

Dgroup: DG01746 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available 48 ... Loop diuretic ... Loop diuretics, sulfonamide SLC12A1 (NKCC2) [HSA:6557] [KO:K14425] SLC12A2 (NKCC1) [HSA:6558] [KO:K10951] ... ...P17/USP/INN) ... D01634 ... Piretanide (JAN/USAN/INN) Cardiovascular agent ... DG01690 ... Sulfonamide diuretic ... DG017

77 FR 36396 - Safety Zones; Fireworks Displays in Captain of the Port Long Island Sound Zone

Science.gov (United States)

2012-06-19

... viewing or submitting material to the docket, call Renee V. Wright, Program Manager, Docket Operations... Fireworks. South Bay off Snapper Inn Restaurant, Oakdale, NY. 5. North Bay 4th of July Fireworks... p.m. Location: A point on the Connetquot River off Snapper Inn Restaurant, Oakdale, NY in...

Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

Science.gov (United States)

Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

2017-08-01

In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

75 FR 65263 - Virginia Graeme Baker Pool and Spa Safety Act; Public Accommodation; Withdrawal of Proposed Rule

Science.gov (United States)

2010-10-22

...'' or ``Act'') as ``an inn, hotel, motel, or other place of lodging, except for an establishment located... interpretive rule to interpret ``public accommodations facility'' in the VGB Act as ``an inn, hotel, motel, or... CONSUMER PRODUCT SAFETY COMMISSION 16 CFR Part 1450 Virginia Graeme Baker Pool and Spa Safety Act...

Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

2016-04-11

The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2011-05-15

Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain directly the LO energy where LO phonon scattering dominates transport at high temperature. Moreover, the Hall mobility is determined by the scattering of electrons with LO phonons so the data for the temperature dependence of Hall mobility have been used to calculate the effective energy of longitudinal optical phonons.The samples investigated were (i) single heterojunction InN with thicknesses of 1.08, 2.07 and 4.7 {mu}m grown onto a 40 nm GaN buffer and (ii) GaN/InN/AlN double heterojunction samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m. Hall Effect measurements were carried out as a function of temperature in the range between T = 1.7 and 275 K at fixed magnetic and electric fields. The Raman spectra were obtained at room temperature. In the experiments, the 532 nm line of a nitrogen laser was used as the excitation source and the light was incident onto the samples along of the growth direction (c-axis). The results, obtained from the two independent techniques suggest the following: (1) LO phonon energies obtained from momentum relaxation experiments are generally slightly higher than those obtained from the Raman spectra. (2) LO phonon energy for the single heterojunctions does not depend on the InN thickness. (3) In double heterostructures, with smaller InN thicknesses and hence with increased strain, LO phonon energy increases by 3% (experimental accuracy is < 1%) when the InN layer thickness increases from 400 to 800 nm (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Patient Safety in Medication Nomenclature: Orthographic and Semantic Properties of International Nonproprietary Names.

Directory of Open Access Journals (Sweden)

Rachel Bryan

Full Text Available Confusion between look-alike and sound-alike (LASA medication names (such as mercaptamine and mercaptopurine accounts for up to one in four medication errors, threatening patient safety. Error reduction strategies include computerized physician order entry interventions, and 'Tall Man' lettering. The purpose of this study is to explore the medication name designation process, to elucidate properties that may prime the risk of confusion.We analysed the formal and semantic properties of 7,987 International Non-proprietary Names (INNs, in relation to naming guidelines of the World Health Organization (WHO INN programme, and have identified potential for errors. We explored: their linguistic properties, the underlying taxonomy of stems to indicate pharmacological interrelationships, and similarities between INNs. We used Microsoft Excel for analysis, including calculation of Levenshtein edit distance (LED. Compliance with WHO naming guidelines was inconsistent. Since the 1970s there has been a trend towards compliance in formal properties, such as word length, but longer names published in the 1950s and 1960s are still in use. The stems used to show pharmacological interrelationships are not spelled consistently and the guidelines do not impose an unequivocal order on them, making the meanings of INNs difficult to understand. Pairs of INNs sharing a stem (appropriately or not often have high levels of similarity (<5 LED, and thus have greater potential for confusion.We have revealed a tension between WHO guidelines stipulating use of stems to denote meaning, and the aim of reducing similarities in nomenclature. To mitigate this tension and reduce the risk of confusion, the stem system should be made clear and well ordered, so as to avoid compounding the risk of confusion at the clinical level. The interplay between the different WHO INN naming principles should be further examined, to better understand their implications for the problem of LASA

Dgroup: DG00410 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00410 Chemical ... DGroup Methylprednisolone ... D00407 ... Methylprednisolone (JP17/USP.../INN) ... D00751 ... Methylprednisolone sodium succinate (JAN/USP) ... D00979 ... Methylprednisolone acetate (JAN/US...P) ... D05000 ... Methylprednisolone hemisuccinate (USP); Methylprednisolone succinate (JP17) D05001 ... Methylprednisolo...ne sodium phosphate (USAN) D05002 ... Methylprednisolone suleptanate (USAN/INN) D07203 ... Methylprednisol

78 FR 34349 - Schedules for Atlantic Shark Identification Workshops and Protected Species Safe Handling...

Science.gov (United States)

2013-06-07

...; Kenner, LA; Charleston, SC; and Corpus Christi, TX. See SUPPLEMENTARY INFORMATION for further details on... Inn & Suites, 3312 Vista Drive, Rosenberg, TX 77471. 3. September 12, 2013, 12 p.m.-4 p.m., Holiday..., Kenner, LA 70062. 5. September 10, 2013, 9 a.m.-5 p.m., Holiday Inn, 301 Savannah Highway, Charleston, SC...

Regulering, ikke kriminalisering

DEFF Research Database (Denmark)

Ludvigsen, Stian Skår; Sieberg, Katri K.

2007-01-01

Kriminalisering av horekunder vil føre til at markedet for seksuelle tjenester skyves inn i det skjulte.  Skjer dette, kan kostnadene bli høye.......Kriminalisering av horekunder vil føre til at markedet for seksuelle tjenester skyves inn i det skjulte.  Skjer dette, kan kostnadene bli høye....

78 FR 36748 - Caribbean Fishery Management Council; Scoping Meetings

Science.gov (United States)

2013-06-19

.... ADDRESSES: The scoping meetings will be held in Puerto Rico and in the U.S. Virgin Islands. See....--Holiday Inn Ponce & Tropical Casino, 3315 Ponce By Pass, Ponce, Puerto Rico. July 10, 2013-7 p.m.--Mayag[uuml]ez Holiday Inn, 2701 Hostos Avenue, Mayag[uuml]ez, Puerto Rico. July 11, 2013-7 p.m.--Asociaci...

Growth and characterisation of group-III nitride-based nanowires for devices

Energy Technology Data Exchange (ETDEWEB)

Meijers, R J

2007-08-30

One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

Business Case Analysis: Increasing Air Force Dining Hall Use as an Alternative to Closure

Science.gov (United States)

2011-12-01

work on 3 new food stations at the Sierra Inn, as well as a daily buffet line. They introduced a new deli, grill, and salad bar as well as a “Just4U...courses, starches, and vegetables, it is not uncommon for the Sierra Inn to offer six to eight main courses, a sandwich bar, soup and salad bar, and

Prime Contract Awards Alphabetically by Contractor, by State or Country, and Place, Fiscal Year 1987. Part 17. Southwest Ordnance Supply-Taylor-Made Hose, Incorporated.

Science.gov (United States)

1987-01-01

COI0)000 .....0)00)0)0)00)CO0)0M0)0)0 0 0 0 0 0 0 -0 004 �I( lf~l- 0 0 0 0 0 0 GAO 001,- I-I I 04) 0 𔃺)00) 1 4 .I ww1- 0)00) I C14 ’) N 4 -1 0) N4...LAVLOc)n 40 MI-4 0 4 04 N 4 NJ(’J 0 C IN N 1 1 1 nCci ( CA INN "N INN eq4 IN N C04(󈧈 M 740-40 IC4 4 ൌ’J" (𔃾INNV (𔃾 INN C/-J (d)N NC𔃾("’C44 (- JiNI "N

Self-annihilation of inversion domains by high energy defects in III-Nitrides

International Nuclear Information System (INIS)

Koukoula, T.; Kioseoglou, J.; Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

2014-01-01

Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001 ¯ ) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN

Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes

International Nuclear Information System (INIS)

Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping

2014-01-01

By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced by demonstrating temperature-dependent photoluminescence (PL) measurements. Two emission peaks corresponding to In-rich localized state and quantum well ground state emissions are observed from the electroluminescence (EL) spectra, which demonstrates that the phase separation takes place in our designed structures and the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization and hence improved light-emission characteristics. Therefore, it is suggested that enhancing localization is possible, to some extent, by modulating the QW structures with the introduction of the GaN and InN interlayers for superior light-emission performances in InGaN-based light-emitting diodes (LEDs). Moreover, the nonradiative channel probably associated with InN droplet is proved to be existent from the Arrhenius plots in our InGaN–delta-InN MQW structure. - Highlights: • By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced. • Two emission peaks observed from electroluminescence (EL) spectra demonstrate that the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization. • The nonradiative channel associated with InN droplet is proved to be existent from the Arrhenius plots

InN/GaN short-period superlattices as ordered InGaN ternary alloys

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Imai, Daichi; Wang, Ke; Yoshikawa, Akihiko

2016-01-01

Coherent (InN) 1 /(GaN) n short-period superlattices (SPSs) were successfully grown through dynamic atomic layer epitaxy (D-ALEp) mode by RF-plasma molecular beam epitaxy (MBE), where GaN layer thicknesses n were thinned down to 4 monolayer (ML). After this achievement, we demonstrated quasi-ternary InGaN behavior in their photoluminescence (PL) spectra for the first time. It was found interestingly that GaN layer thickness of n = 4 ML was the criterion both for structural control and continuum-band formation. Although highly lattice-mismatched InN/GaN interfaces easily introduce relaxation in (InN) 1 /(GaN) 4 SPSs during growth depending on the dynamic surface stoichiometry condition, this problem was overcome by precise control/removal of fluid-like residual In/Ga metals on the growth front with in-situ monitoring method. The (InN) 1 /(GaN) n SPSs with n ≥ 7 ML showed a constant PL peak energy around 3.2 eV at 12 K, reflecting discrete electron/hole wavefunctions. On the other hand, the (InN) 1 /(GaN) 4 SPSs indicated the red-shifted PL peak at 2.93 eV at 12 K, which was attributed to the continuum-band state with increasing in the overlap of electrons/hole wavefunctions. This result is concluded that the (InN) 1 /(GaN) 4 SPSs can be considered as ordered InGaN alloys. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Jia, Junjun, E-mail: jia@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Torigoshi, Yoshifumi; Suko, Ayaka; Nakamura, Shin-ichi [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Kawashima, Emi; Utsuno, Futoshi [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

2017-02-28

Highlights: • Nitrogen addition induces the structure of ITZO film change from amorphous phase to a c-axis oriented InN polycrystalline phase. • Nitrogen addition suppressed the formation of oxygen-related vacancies in ITZO films. • A red-shift in the optical band edge for ITZO films was observed as the nitrogen flow ratio increased, which was due to the generation of InN crystallites. - Abstract: Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In{sub 2}O{sub 3} phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In{sub 2}O{sub 3} matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Songrui Zhao

2017-09-01

Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

International Nuclear Information System (INIS)

Oliva, R.; Segura, A.; Ibáñez, J.; Artús, L.; Yamaguchi, T.; Nanishi, Y.

2014-01-01

We have performed high-pressure Fourier transform infrared reflectance measurements on a freestanding InN thin film to determine the refractive index of wurtzite InN and its high-pressure rocksalt phase as a function of hydrostatic pressure. From a fit to the experimental refractive-index curves including the effect of the high-energy optical gaps, phonons, free carriers, and the direct (fundamental) band-gap in the case of wurtzite InN, we obtain pressure coefficients for the low-frequency (electronic) dielectric constant ε ∞ . Negative pressure coefficients of −8.8 × 10 −2  GPa −1 and −14.8 × 10 −2  GPa −1 are obtained for the wurtzite and rocksalt phases, respectively. The results are discussed in terms of the electronic band structure and the compressibility of both phases

Dgroup: DG01727 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01727 DGroup Anthraquinone antineoplastic -antrone DG01727.gif DG00701 ... Mitoxantrone ... D08224 ... Mitoxantron...e (INN) ... D02166 ... Mitoxantrone hydrochloride (JAN/USP) ... DG00704 ... Pixantrone ... D05522 ... Pixantron...e (USAN/INN) ... D09654 ... Pixantrone dimaleate (USAN) D02894 ... Ametantrone acetate (USAN) D04685 ... Ledoxantron...e trihydrochloride (USAN) D04783 ... Losoxantrone hydrochloride (USAN) D05510 ... Piroxantron...e hydrochloride (USAN) D06059 ... Teloxantrone hydrochloride (USAN) D06190 ... Topixantrone (USAN/IN

Dgroup: DG00093 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00093 Chemical ... DGroup Prednisolone ... D00472 ... Prednisolone (JP17/USP/INN) ... D00980 ... Prednisolo...ne acetate (JP17/USP/INN) ... D00981 ... Prednisolone sodium phosphate (JP17/USP) ... D00982 ... Prednisolo...ne tebutate (JAN/USP) D01239 ... Prednisolone sodium succinate (JP17/USP) ... D01998 ... Prednisolone farnesy...late (JAN) ... D02156 ... Prednisolone hemisuccinate (USP); Prednisolone succinate (JP17) D03301 ... Prednisolo...ne valerate acetate (JAN) ... D08412 ... Prednisolone pivalate D08413 ... Prednisolone sodiu

Cultural diversity in hospitality management : how to improve cultural diversity workforce

OpenAIRE

Korjala, Veera

2013-01-01

The bachelor´s thesis investigates cultural diversity in the hospitality management. It aims at presenting effective ways to improve cultural diversity in a workplace. This study was commissioned by JW Marriott San Antonio Hill Country Resort & Spa in Texas, USA and three hotels in Stillwater, Oklahoma, USA: Atherton Hotel, Hampton Inn & Suites and Residence Inn. The bachelor´s thesis incorporates culture theories and their applications to the workplace. Additionally, it focuses on cultural d...

Solar hot water system installed at Las Vegas, Nevada. Final report

Energy Technology Data Exchange (ETDEWEB)

None

1981-01-01

The solar hot water system installed at LaQuinta Motor Inn Inc., at Las Vegas, Nevada is described. The Inn is a three-story building with a flat roof for installation of the solar panels. The system consists of 1200 square feet of liquid flat plate collectors, a 2500 gallon insulated vertical steel storage tank, two heat exchangers and pumps and controls. The system was designed to supply approximately 74 percent of the total hot water load.

An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride

International Nuclear Information System (INIS)

Wang, Shulong; Liu, Hongxia; Song, Xin; Guo, Yulong; Yang, Zhaonian

2014-01-01

This paper presents a theoretical analysis of anisotropic transport properties and develops an anisotropic low-field electron analytical mobility model for wurtzite indium nitride (InN). For the different effective masses in the Γ-A and Γ-M directions of the lowest valley, both the transient and steady state transport behaviors of wurtzite InN show different transport characteristics in the two directions. From the relationship between velocity and electric field, the difference is more obvious when the electric field is low in the two directions. To make an accurate description of the anisotropic transport properties under low field, for the first time, we present an analytical model of anisotropic low-field electron mobility in wurtzite InN. The effects of different ionized impurity scattering models on the low-field mobility calculated by Monte Carlo method (Conwell-Weisskopf and Brooks-Herring method) are also considered. (orig.)

Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

Energy Technology Data Exchange (ETDEWEB)

Oliva, R. [Institut Jaume Almera, Consell Superior d' Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Catalonia (Spain); MALTA-Consolider Team, Departament de Física Aplicada, ICMUV, Universitat de València, c/Dr. Moliner 50, 46100 Burjassot, València (Spain); Segura, A. [MALTA-Consolider Team, Departament de Física Aplicada, ICMUV, Universitat de València, c/Dr. Moliner 50, 46100 Burjassot, València (Spain); Ibáñez, J., E-mail: jibanez@ictja.csic.es; Artús, L. [Institut Jaume Almera, Consell Superior d' Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Shiga 525-8577 (Japan)

2014-12-08

We have performed high-pressure Fourier transform infrared reflectance measurements on a freestanding InN thin film to determine the refractive index of wurtzite InN and its high-pressure rocksalt phase as a function of hydrostatic pressure. From a fit to the experimental refractive-index curves including the effect of the high-energy optical gaps, phonons, free carriers, and the direct (fundamental) band-gap in the case of wurtzite InN, we obtain pressure coefficients for the low-frequency (electronic) dielectric constant ε{sub ∞}. Negative pressure coefficients of −8.8 × 10{sup −2 }GPa{sup −1} and −14.8 × 10{sup −2 }GPa{sup −1} are obtained for the wurtzite and rocksalt phases, respectively. The results are discussed in terms of the electronic band structure and the compressibility of both phases.

InN/GaN Superlattices: Band Structures and Their Pressure Dependence

DEFF Research Database (Denmark)

Gorczyca, Iza; Suski, Tadek; Staszczak, Grzegorz

2013-01-01

Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells...... with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local...... density approximation (LDA) with a semi-empirical correction for the ‘‘LDA gap error’’. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain...

Invaders in hot water: a simple decontamination method to prevent the accidental spread of aquatic invasive non-native species.

Science.gov (United States)

Anderson, Lucy G; Dunn, Alison M; Rosewarne, Paula J; Stebbing, Paul D

Watersports equipment can act as a vector for the introduction and spread of invasive non native species (INNS) in freshwater environments. To support advice given to recreational water users under the UK Government's Check Clean Dry biosecurity campaign and ensure its effectiveness at killing a range of aquatic INNS, we conducted a survival experiment on seven INNS which pose a high risk to UK freshwaters. The efficacy of exposure to hot water (45 °C, 15 min) was tested as a method by which waters users could 'clean' their equipment and was compared to drying and a control group (no treatment). Hot water had caused 99 % mortality across all species 1 h after treatment and was more effective than drying at all time points (1 h: χ 2  = 117.24, p  clean equipment. We recommend that it is advocated in future biosecurity awareness campaigns.

Eg høyrer og eg gløymer, eg ser og eg huskar, eg gjer og eg forstår

OpenAIRE

Liavåg, Sturla Sætre

2017-01-01

Høgskulen på Vestlandet Avdeling for helsefag/ Institutt for sjukepleie/Campus Førde Slik som sjukepleiaryrket utviklar seg no til dags får sjukepleiaren meir og meir ansvar. Dette gjeld både sjukepleiarar som yrkesgruppe men og som enkeltpersonar. Ein kan oppleve å gå rett frå sjukepleiarstudiet og inn på ein arbeidsplass, og der oppleve å vere einaste sjukepleiar, og med stort ansvar. Som sjukepleiar stiller samfunnet både formelle og uformelle krav til kva ein skal site inne me...

Det er fullt her inne!

OpenAIRE

Hay, Simen Formo

2018-01-01

Program og foto. Teaterforestilling vist 12., 13., 14., 16.-18. april 2018 på Seilduken Scene 6 Bacheloroppgave i regi, fra Teaterhøgskolen, med regi av Simen F.H.. Et avgangsprosjekt, med skuespillerne Ina Svenningdal, Sindre Hansen, Sarah Francesca Brænne, Brede Fristad, William Greni Arnø, Lars Halvor Andreassen. Bandet Elon Musk deltar, og kleskolleksjon lanseres av Alva Brosten / Hijacked. Foto: S. Hutton?

India Basin 900 Innes Remediation

Science.gov (United States)

Lower Walnut Creek Restoration Project will restore and enhance coastal wetlands along southern shoreline of Suisun Bay from Suisun Bay upstream along Walnut Creek, improving habitat quality, diversity, and connectivity along three miles of creek channel.

Powder-XRD and (14) N magic angle-spinning solid-state NMR spectroscopy of some metal nitrides.

Science.gov (United States)

Kempgens, Pierre; Britton, Jonathan

2016-05-01

Some metal nitrides (TiN, ZrN, InN, GaN, Ca3 N2 , Mg3 N2 , and Ge3 N4 ) have been studied by powder X-ray diffraction (XRD) and (14) N magic angle-spinning (MAS) solid-state NMR spectroscopy. For Ca3 N2 , Mg3 N2 , and Ge3 N4 , no (14) N NMR signal was observed. Low speed (νr  = 2 kHz for TiN, ZrN, and GaN; νr  = 1 kHz for InN) and 'high speed' (νr  = 15 kHz for TiN; νr  = 5 kHz for ZrN; νr  = 10 kHz for InN and GaN) MAS NMR experiments were performed. For TiN, ZrN, InN, and GaN, powder-XRD was used to identify the phases present in each sample. The number of peaks observed for each sample in their (14) N MAS solid-state NMR spectrum matches perfectly well with the number of nitrogen-containing phases identified by powder-XRD. The (14) N MAS solid-state NMR spectra are symmetric and dominated by the quadrupolar interaction. The envelopes of the spinning sidebands manifold are Lorentzian, and it is concluded that there is a distribution of the quadrupolar coupling constants Qcc 's arising from structural defects in the compounds studied. Copyright © 2015 John Wiley & Sons, Ltd.

Radiological protection and calibration of an activity meter with cesium and barium sources in a nuclear medicine center

International Nuclear Information System (INIS)

Morales L, M.E.

2005-01-01

Presently work is shown the results when gauging a team Deluxe Isotope (Caliper 11) with some sources of Cesium 137 and Barium 133, in a Center of Medicine Nuclear that operates from the anus 1983 in a modern building inside the one Institute of Illnesses Neoplasia (Inn). This Center was equipped initially with teams donated by the International Organism of Atomic Energy (Oa) with those that it develops assistance, educational works and of investigation, giving services to patient of the Inn and other public and private medical centers. (Author)

Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids

International Nuclear Information System (INIS)

Lai, Wei-Jung; Li, Shao-Sian; Lin, Chih-Cheng; Kuo, Chun-Chiang; Chen, Chun-Wei; Chen, Kuei-Hsien; Chen, Li-Chyong

2010-01-01

We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.

Radiological protection and calibration of an activity meter with cesium and barium sources in a nuclear medicine center; Proteccion radiologica y calibracion de un activimetro con fuentes de cesio y bario en un centro de medicina nuclear

Energy Technology Data Exchange (ETDEWEB)

Morales L, M.E. [IPEN INEN Centro de Medicina Nuclear, Av. Aviacion 3799, Lima 34 (Peru)

2005-07-01

Presently work is shown the results when gauging a team Deluxe Isotope (Caliper 11) with some sources of Cesium 137 and Barium 133, in a Center of Medicine Nuclear that operates from the anus 1983 in a modern building inside the one Institute of Illnesses Neoplasia (Inn). This Center was equipped initially with teams donated by the International Organism of Atomic Energy (Oa) with those that it develops assistance, educational works and of investigation, giving services to patient of the Inn and other public and private medical centers. (Author)

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

OpenAIRE

P. Sangeetha; K. Jeganathan; V. Ramakrishnan

2013-01-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high) phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is foun...

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

KAUST Repository

Wang, Ping

2015-12-22

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires; Phasenkohaerenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodraehten

Energy Technology Data Exchange (ETDEWEB)

Estevez Hernandez, Sergio

2009-10-16

Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e{sup 2}/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties

Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires

International Nuclear Information System (INIS)

Estevez Hernandez, Sergio

2009-01-01

Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e 2 /h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of

Fabrication and structural studies of opal-III nitride nanocomposites

Science.gov (United States)

Davydov, V. Yu; Golubev, V. G.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Brogueira, P.; Schwarz, R.

2000-12-01

In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.

Weak Interaction processes in core-collapse supernova

International Nuclear Information System (INIS)

Martinez-Pinedo, Gabriel

2008-01-01

In this manuscript we review the role that weak interaction processes play in supernova. This includes electron captures and inelastic neutrino-nucleus scattering (INNS). Electron captures during the collapse occur mainly in heavy nuclei, however the proton contribution is responsible for the convergence of different models to a 'norm' stellar trajectory. Neutrino-nucleus cross sections at supernova neutrino energies can be determined from precise data on the magnetic dipole strength. The results agree well with large-scale shell-model calculations. When incorporated in core-collapse simulations INNS increases the neutrino opacities noticeably and strongly reduces the high-energy part of the supernova spectrum

Results of the benchmark for blade structural models, part A

DEFF Research Database (Denmark)

Lekou, D.J.; Chortis, D.; Belen Fariñas, A.

2013-01-01

A benchmark on structural design methods for blades was performed within the InnWind.Eu project under WP2 “Lightweight Rotor” Task 2.2 “Lightweight structural design”. The present document is describes the results of the comparison simulation runs that were performed by the partners involved within...... Task 2.2 of the InnWind.Eu project. The benchmark is based on the reference wind turbine and the reference blade provided by DTU [1]. "Structural Concept developers/modelers" of WP2 were provided with the necessary input for a comparison numerical simulation run, upon definition of the reference blade...

Dicty_cDB: VSB521 [Dicty_cDB

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Full Text Available efqslkmklml*iyy*mksqkvlkscalavvplmksvs rkfisvmilhsstfikrf*lyqlinklmlvkml*phntfyhl*lqspklemfmlptlqvp elavslll...ESVRARWAYKVPGSMIQNLLGM KHGAPNKHHIILIKKLLGY*inn*kk Frame B: ---hqamkp*wklsri*kprtt

Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

Directory of Open Access Journals (Sweden)

Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi and Masatomo Sumiya

2013-01-01

Full Text Available Core-level and valence band spectra of InxGa1−xN films were measured using hard x-ray photoemission spectroscopy (HX-PES. Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (~20 nm, the spectra contain both surface and bulk information due to the surface band bending. The InxGa1−xN films (x = 0–0.21 exhibited upward surface band bending, and the valence band maximum was shifted to lower binding energy when the mole fraction of InN was increased. On the other hand, downward surface band bending was confirmed for an InN film with low carrier density despite its n-type conduction. Although the Fermi level (EF near the surface of the InN film was detected inside the conduction band as reported previously, it can be concluded that EF in the bulk of the film must be located in the band gap below the conduction band minimum.

Exponential operations and aggregation operators of interval neutrosophic sets and their decision making methods.

Science.gov (United States)

Ye, Jun

2016-01-01

An interval neutrosophic set (INS) is a subclass of a neutrosophic set and a generalization of an interval-valued intuitionistic fuzzy set, and then the characteristics of INS are independently described by the interval numbers of its truth-membership, indeterminacy-membership, and falsity-membership degrees. However, the exponential parameters (weights) of all the existing exponential operational laws of INSs and the corresponding exponential aggregation operators are crisp values in interval neutrosophic decision making problems. As a supplement, this paper firstly introduces new exponential operational laws of INSs, where the bases are crisp values or interval numbers and the exponents are interval neutrosophic numbers (INNs), which are basic elements in INSs. Then, we propose an interval neutrosophic weighted exponential aggregation (INWEA) operator and a dual interval neutrosophic weighted exponential aggregation (DINWEA) operator based on these exponential operational laws and introduce comparative methods based on cosine measure functions for INNs and dual INNs. Further, we develop decision-making methods based on the INWEA and DINWEA operators. Finally, a practical example on the selecting problem of global suppliers is provided to illustrate the applicability and rationality of the proposed methods.

Photoluminescence and pressure effects in short period InN/nGaN superlattices

DEFF Research Database (Denmark)

Staszczak, G.; Gorczyca, I.; Suski, T.

2013-01-01

Measurements of photoluminescence and its dependence on hydrostatic pressure are performed on a set of InN/nGaN superlattices with one InN monolayer and with different numbers of GaN monolayers. The emission energies, EPL, measured at ambient pressure, are close to the value of the band gap, Eg......, in bulk GaN, in agreement with other experimental findings. The pressure dependence of the emission energies, dEPL/dp, however, resembles that of the InN energy gap. Further, the magnitudes of both EPL and dEPL/dp are significantly higher than those obtained from ab-initio calculations for 1In...

Ungdom og fortelling - en narrativ analyse av Gen 37 med et særlig henblikk på forkynnelse av gammeltestamentlige fortellinger til ungdom

OpenAIRE

Sæbø, Linn

2011-01-01

Det er mange som har skrevet om hvordan en kan forkynne det gamle testamentet, og det er mange som har skrevet om hvordan forkynne for ungdom, men få har satt disse to fagområdene sammen. I denne oppgaven vil jeg prøve å gjøre akkurat det. Jeg vil først gå inn på emnet; ungdom og fortellinger. Der vil jeg se på Plan for trosopplæring og RLE-planen med henblikk på hvor mye av ”pensum” som er fortellingsstoff. Jeg vil også komme inn på temaet; hvem er ungdom, og ungdom og identitet....

Dgroup: DG01579 [KEGG MEDICUS

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Full Text Available 3047 ... Bacitracin methylene disalicylate (USP) ... D03048 ... Bacitracin zinc (USP) D02927 ... Amphomycin (USAN) D10380 ... Surotomycin (USAN/INN) Antibacterial ... Antibiotics ...

Dgroup: DG01685 [KEGG MEDICUS

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Full Text Available DG01685 DGroup Insulin sensitizer ... DG01684 ... Biguanide antidiabetic ... DG00112 ... Phen...litazar (USAN/INN) ... D09350 ... Indeglitazar (USAN) Antidiabetic agent ... Antidiabetics ...

Dicty_cDB: VHN654 [Dicty_cDB

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Full Text Available *snisgi*kafkricniy irsc*h**tkwssnskrn*kcsyilflhkws*siriqwcq*snskkysrskqiifc*inn ctknatn*INKKKKIIXKLFYLIYXLKKK--- ---QINNLY*kmsx...**kklevflhsift*melkyqnsvvpmkql*evl*kqtnnflln**l ykkcnklnk*kkknnsqiilfnlxfkkk--- ---QINNLY*kmsxvihisfnexldkxl

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Science.gov (United States)

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Dgroup: DG02570 [KEGG MEDICUS

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Full Text Available DG02570 Chemical ... DGroup Tebipenem ... D09598 ... Tebipenem pivoxil (JAN/INN) ... Anti...bacterial, Cell wall biosynthesis inhibitor beta-Lactam, Carbapenem penicillin binding protein ...

Drug: D06120 [KEGG MEDICUS

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Full Text Available D06120 Drug Thyrotropin alfa (USAN/INN); Thyrotropin alfa (genetical recombination...) (JAN); Thyrotropin human alfa (genetical recombination); Thyrogen (TN) ... Therapeutic category: 7990 A

Drug: D02994 [KEGG MEDICUS

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Full Text Available D02994 Drug Rituximab (USAN/INN); Rituximab (genetical recombination) (JAN); Ritux...imab (genetical recombination) [Rituximab biosimilar 1] (JAN); Rituxan (TN) ... Therapeutic category: 429

Dgroup: DG02648 [KEGG MEDICUS

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Full Text Available DG02648 Chemical ... DGroup Infliximab ... D02598 ... Infliximab (USAN/INN); Infliximab (genetica...l recombination) (JAN); Infliximab (genetical recombination) [Infliximab biosimilar1] (JAN); Infliximab (genetica

Dgroup: DG02612 [KEGG MEDICUS

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Full Text Available DG02612 Chemical ... DGroup Rituximab ... D02994 ... Rituximab (USAN/INN); Rituximab (gene...tical recombination) (JAN); Rituximab (genetical recombination) [Rituximab biosimilar 1] (JAN) ... ATC code:

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

2012-01-15

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

International Nuclear Information System (INIS)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

2012-01-01

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

Science.gov (United States)

Sangeetha, P.; Jeganathan, K.; Ramakrishnan, V.

2013-06-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm-1 respectively and E2 (high) phonon mode of GaN shell at 573 cm-1. The free carrier concentration of InN core is found to be low in the order ˜ 1016 cm-3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ˜15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ˜0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high) phonon mode of GaN shell at 573 cm-1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111 substrate

Directory of Open Access Journals (Sweden)

P. Sangeetha

2013-06-01

Full Text Available The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE on Si (111 substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high and A1 (LO phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is found to be low in the order ∼ 1016 cm−3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high phonon mode of GaN shell at 573 cm−1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

International Nuclear Information System (INIS)

Sangeetha, P.; Ramakrishnan, V.; Jeganathan, K.

2013-01-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E 2 (high) and A 1 (LO) phonon mode of InN core at 490 and 590 cm −1 respectively and E 2 (high) phonon mode of GaN shell at 573 cm −1 . The free carrier concentration of InN core is found to be low in the order ∼ 10 16 cm −3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E 2 (high) phonon mode of GaN shell at 573 cm −1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Doped indium nitride thin film by sol-gel spin coating method

Science.gov (United States)

Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong

2017-12-01

In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.

Dgroup: DG02007 [KEGG MEDICUS

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Full Text Available DG02007 DGroup Antianxiety, carbamate derivatives ... D00376 ... Meprobamate (JAN/USP/I...NN) ... D07317 ... Emylcamate (INN) D01807 ... Mebutamate (JAN/USAN) Neuropsychiatric agent ... Antianxiety ...

Dgroup: DG01771 [KEGG MEDICUS

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Full Text Available DG01771 Chemical ... DGroup Docusate ... D00305 ... Docusate sodium (USP); Sodium dioctyl ...sulfosuccinate (INN); Dioctyl sodium sulfosuccinate (JAN) ... D03885 ... Docusate calcium (USP) D03886 ... Docusate

Dgroup: DG01987 [KEGG MEDICUS

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Full Text Available DG01987 Chemical ... DGroup Eglumegad Eglumetad ... D08908 ... Eglumegad (INN) D03966 ... Eglumetad (USAN) ... Antianxie...ty, Smoking cessation ajunct GRM2 [HSA:2912] [KO:K04605] ...

Dgroup: DG02590 [KEGG MEDICUS

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Full Text Available DG02590 Chemical ... DGroup Laropiprant ... D08940 ... Laropiprant (INN/USAN) ... Anti-atherosclerotic, Antidyslipide...mia, Prostaglandin D2 receptor antagonist Target: PTGDR [HSA:5729] [KO:K04332] ...

Dgroup: DG02662 [KEGG MEDICUS

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Full Text Available DG02662 Chemical ... DGroup Apolizumab ... D02967 ... Apolizumab (USAN/INN) ... Antineoplastic, Anti-HLA-DR antibody... Monoclonal antibody HLA-DRB [HSA:3123 3125 3126 3127] [KO:K06752] ...

Dgroup: DG02658 [KEGG MEDICUS

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Full Text Available DG02658 Chemical ... DGroup Cysteamine Mercaptamine ... D03634 ... Cysteamine (USAN); Merc...aptamine (INN) D03635 ... Cysteamine hydrochloride (USAN) ... D10468 ... Cysteamine bitartrate (JAN) ... Cystine concentration-lowering agent ...

Dgroup: DG02008 [KEGG MEDICUS

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Full Text Available DG02008 DGroup Gastric mucosal protectant ... DG00025 ... Sucralfate ... C07314 ... Sucralfate ... D00446 ... Sucralfate... (USP/INN); Sucralfate hydrate (JP17) ... D00177 ... Methylmethionine sulfonium chloride (J

Dgroup: DG00901 [KEGG MEDICUS

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Full Text Available hloride (JP17) ... Neuropsychiatric agent ... DG01941 ... Benzamide antipsychotic ... DG01478 ... Dopamine antagonist ... D... DG00901 Chemical ... DGroup Tiapride ... D08590 ... Tiapride (INN) D01522 ... Tiapride hydroc

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D., E-mail: p.soto@isom.upm.es; Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique [Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Mánuel, José M.; Jiménez, Juan J.; García, Rafael [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); Morales, Francisco M. [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz, Cádiz (Spain); Senichev, Alexander [Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120 (Germany); Lienau, Christoph [Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg (Germany); Nötzel, Richard, E-mail: noetzel500@gmail.com [L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy)

2015-01-12

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films

International Nuclear Information System (INIS)

Kim, J.J.; Ikenaga, E.; Kobata, M.; Takeuchi, A.; Awaji, M.; Makino, H.; Chen, P.P.; Yamamoto, A.; Matsuoka, T.; Miwa, D.; Nishino, Y.; Yamamoto, T.; Yao, T.; Kobayashi, K.

2006-01-01

Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source

Conduction band offset at the InN/GaN heterojunction

International Nuclear Information System (INIS)

Wang Kejia; Lian Chuanxin; Su Ning; Jena, Debdeep; Timler, John

2007-01-01

The conduction-band offset between GaN and InN is experimentally determined. InN/n-type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current flow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be ∼0.94 eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of 0.95 eV across the heterojunction, consistent with the capacitance measurement. By combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be ΔE C =1.68±0.1 eV

Dgroup: DG02651 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ody Monoclonal antibody IL2RA (CD25) [HSA:3559] [KO:K05068] ... ... DG02651 Chemical ... DGroup Daclizumab ... D03639 ... Daclizumab (USAN/INN) ... Immunosuppressant, Anti-CD25 antib

Dgroup: DG00637 [KEGG MEDICUS

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Full Text Available DG00637 Chemical ... DGroup Micafungin ... D08218 ... Micafungin (INN) D02465 ... Micafungin ...sodium (JAN/USAN) ... D11010 ... Micafungin sodium hydrate (JAN) ... ATC code: J02AX05 Antibiotics ...

Dgroup: DG01735 [KEGG MEDICUS

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Full Text Available glinide (JP17/USAN/INN) ... D01854 ... Mitiglinide calcium hydrate (JP17) ... Antidiabetic agent Unclassified ... DG02044 ... Hypoglycemics ... Antidiabetics ABCC8 (SUR1) [HSA:6833] [KO:K05032] ...

76 FR 24463 - Caribbean Fishery Management Council; Public Meeting

Science.gov (United States)

2011-05-02

... Inn Hotel, 6530 Isla Verde Avenue, Carolina, Puerto Rico 00979. FOR FURTHER INFORMATION CONTACT... (OFL) vs. Acceptable Biological Catch (ABC) and legal implications of each. b. Role of SSC and how...

Sociální a společenské aspekty hostinského prostoru

Czech Academy of Sciences Publication Activity Database

Altman, Karel

2013-01-01

Roč. 47, č. 2 (2013), s. 139-152 ISSN 0862-1209 Institutional support: RVO:68378076 Keywords : public houses and inns * regular guests * social relations Subject RIV: AC - Archeology, Anthropology, Ethnology

Yeast Interacting Proteins Database: YNL152W, YMR032W [Yeast Interacting Proteins Database

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Full Text Available YNL152W INN1 Essential protein that associates with the contractile actomyosin ring... Bait description Essential protein that associates with the contractile actomyosin ring, required for ingre

Dicty_cDB: VSI646 [Dicty_cDB

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Full Text Available vwsm*snisgi*kafkricniy irsc*h**tkwssnskrn*kcsyilflqkws*siriqwcq*snskkysrskqiifc*inn ctknatn*inkkkkiixkxfxli*kk--- ---HGSDQINNLY*kmsx...lhgvvhveqylrylksfqtnl*hl hsfmltlin*vviq**kklevflhsiftemelkyqnsvvpmkql*evl*kqtnnflln** lykkcnklnk*KKKNNSQIXXF...NLKKK--- ---HGSDQINNLY*kmsxvihisxnexlxxhlqaexlvidfsaawcgpcxxxxpxfekls nefxtftfvhvdidklsghpivkxixsvptfyfyxnga

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Full Text Available DG02469 Chemical ... DGroup Naftopidil ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablet...s (JP17); Naftopidil orally disintegrating tablets (JP17) ... Antidysuria, alpha1-Adrenergic receptor a

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Full Text Available DG00872 Chemical ... DGroup Cyamemazine ... D07307 ... Cyamemazine (INN) D07756 ... Cyamemazine tartrate Neuropsychiat...ric agent ... DG01905 ... Phenothiazine antipsychotics ATC code: N05AA06 Phenothiazine antipsychotics ...

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Full Text Available DG00887 Chemical ... DGroup Melperone ... D07309 ... Melperone (INN) D08172 ... Melperone hydrochloride Neuropsychiatr...ic agent ... DG01940 ... Butyrophenone derivative ATC code: N05AD03 Butyrophenone antipsychotics ...

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Full Text Available il citrate (USAN) Neuropsychiatric agent ... DG01564 ... Opioid receptor agonist ... DG01563 ... mu-Opioid receptor ago... DG01339 Chemical ... DGroup Carfentanil ... D07620 ... Carfentanil (INN) D03405 ... Carfentan

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Full Text Available DG00979 Chemical ... DGroup Pirisudanol ... D07347 ... Pirisudanol (INN) D08390 ... Pirisudanol dimaleate Neuropsychia...tric agent ... DG01972 ... Nootropic ATC code: N06BX08 Nervous system stimulant ...

Dgroup: DG00823 [KEGG MEDICUS

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Full Text Available DG00823 Chemical ... DGroup Tilidine ... D08597 ... Tilidine (INN) D06147 ... Tilidine hydrochloride (USAN) Neuropsych...iatric agent ... DG01564 ... Opioid receptor agonist ... DG01563 ... mu-Opioid receptor agonis

Dgroup: DG00760 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00760 Chemical ... DGroup Glucosamine ... D04334 ... Glucosamine (USAN/INN) D08022 ... Glucosa...mine hydrochloride D08023 ... Glucosamine sulfate ... ATC code: M01AX05 Nonsteroidal antiinflammatory drug, Antirheumatics ...

78 FR 60297 - Center for Scientific Review; Notice of Closed Meetings

Science.gov (United States)

2013-10-01

..., Rockville, MD 20852. Contact Person: Leonid V. Tsap, Ph.D., Scientific Review Officer, Center for Scientific...: Residence Inn Bethesda, 7335 Wisconsin Avenue, Bethesda, MD 20814. Contact Person: Patrick K Lai, Ph.D...

Dgroup: DG01946 [KEGG MEDICUS

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Full Text Available nofibrate - pravastatin mixt D10857 ... Fenofibrate - simvastatin mist D10385 ... Ezetimibe - atorvastatin mixt ... ... D08488 ... Amlodipine besilate - atorvastatin calcium mixt ... D01291 ... Nicomol (JP17/INN) ... D01892 ... Icosapent

Dgroup: DG02379 [KEGG MEDICUS

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Full Text Available DG02379 Chemical ... DGroup Brinzolamide ... D00652 ... Brinzolamide (JAN/USP/INN) ... ATC code: S01EC04 Antiglauco...ma, Carbonic anhydrase inhibitor CA2 [HSA:760] [KO:K18245] ...

Isoseismals for the Kutch earthquake of 26th January 2001

Indian Academy of Sciences (India)

R. Narasimhan (Krishtel eMaging) 1461 1996 Oct 15 13:05:22

2001-01-26

Jan 26, 2001 ... of schools, hospitals, community inns and govern- ment offices. The survey ... Failure of columns occurred at ground storey level in most multistoreyed ... Acknowledgements. Professor and Head, Department of Earthquake.

77 FR 10539 - National Institute of Dental & Craniofacial Research; Notice of Closed Meeting

Science.gov (United States)

2012-02-22

... Research Special Emphasis Panel; RFA DE12-004 & 005 Functional Restoration of Salivary Glands. Date: March... Garden Inn, 7301 Waverly St., Bethesda, MD 20814. Contact Person: Marilyn Moore-Hoon, Ph.D., Scientific...

NCBI nr-aa BLAST: CBRC-XTRO-01-0737 [SEVENS

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Full Text Available CBRC-XTRO-01-0737 ref|YP_772985.1| binding-protein-dependent transport systems inne...r membrane component [Burkholderia cepacia AMMD] gb|ABI86651.1| binding-protein-dependent transport systems

Dgroup: DG02388 [KEGG MEDICUS

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Full Text Available DG02388 Chemical ... DGroup Diazepam ... D00293 ... Diazepam (JP17/USP/INN) ... ATC code: ...N05BA01 Antianxiety, Minor tranquilizer, Sedative-hypnotic Benzodiazepine derivative GABRA/GABRB/GABRD/GABRE

Alpha-mangostin attenuates oxidative stress and inflammation in ...

African Journals Online (AJOL)

implicated in autoimmune diseases because of ... Inflammation then induces joint disease and synovial damage ..... Anti-inflammatory and lysosomal stability actions of. Cleome ... McInnes IB, Schett G. The pathogenesis of rheumatoid arthritis.

Drug: D07623 [KEGG MEDICUS

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Full Text Available 01942 ... Iminobenzyl antipsychotic Chemical group: DG01312 ... Tricyclic antidepressant, Iminodibenzyl derivativ... D07623 Drug Carpipramine (INN) ... C28H38N4O D07623.gif ... Neuropsychiatric agent ... DG

Dgroup: DG01918 [KEGG MEDICUS

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Full Text Available litinib ... D09689 ... Varlitinib (USAN/INN) ... D09690 ... Varlitinib tosylate (USAN) ... DG01361 ... Crenolanib ... D10102 ... Crenolan...ib (USAN) ... D10103 ... Crenolanib besylate (USAN) ... DG01363 ... Toceranib ... D085

"Bioneeride" Lisa Kiviristi ja John Ivanko ökohotell kogub USAs tuntust / Dagmar Lamp

Index Scriptorium Estoniae

Lamp, Dagmar

2006-01-01

Eesti juurtega Kivirist ja tema elukaaslane Ivanko peavad bed & breakfast-tüüpi hotelli Inn Serendipity, mis kasutab täielikult taastuvenergiat, kogu nende hotellindus põhineb mahepõllumajandusel ja taaskasutamisel

40 CFR 79.66 - Neuropathology assessment.

Science.gov (United States)

2010-07-01

... for vascular perfusion may be found in the text by Zeman and Innes (1963), Hayat (1970), and Spencer..., and necrosis) and tissue changes (e.g., gliosis, leukocytic infiltration, and cystic formation) shall...

Dgroup: DG00980 [KEGG MEDICUS

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Full Text Available DG00980 Chemical ... DGroup Nizofenone ... D08280 ... Nizofenone (INN) D01465 ... Nizofenone fumarate (JAN) Neuropsych...iatric agent ... DG01972 ... Nootropic ATC code: N06BX10 Nervous system stimulant ...

Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

Science.gov (United States)

Pérez-Caro, M.; Rodríguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

2010-07-01

Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm-3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

Energy Technology Data Exchange (ETDEWEB)

Sangeetha, P.; Ramakrishnan, V. [Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai-625 021 (India); Jeganathan, K. [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli-620 024 (India)

2013-06-15

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E{sub 2} (high) and A{sub 1} (LO) phonon mode of InN core at 490 and 590 cm{sup -1} respectively and E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1}. The free carrier concentration of InN core is found to be low in the order {approx} 10{sup 16} cm{sup -3} due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of {approx}15 nm. The phonon-life time of core-shell nanowire structure is estimated to be {approx}0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1} as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

International Nuclear Information System (INIS)

Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

2010-01-01

Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>10 19 cm -3 ), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

Dgroup: DG02667 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG02667 Chemical ... DGroup Teplizumab ... D09013 ... Teplizumab (USAN/INN) ... Antidiabetic, Anti-CD3 antibody... Monoclonal antibody CD3 [HSA:915 916 917] [KO:K06450 K06451 K06452] ...

Dgroup: DG00694 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00694 Chemical ... DGroup Docetaxel ... D07866 ... Docetaxel (JAN/INN) ... D02165 ... Docetaxel (USAN); Doc...etaxel hydrate (JP17); Docetaxel injection (JP17); Docetaxel for injection (JP17) ... Cyp subs

Dgroup: DG01196 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01196 Chemical ... DGroup Samarium (153Sm) lexidronam ... D08504 ... Samarium (153Sm) lexidron...am (INN) D05795 ... Samarium Sm 153 lexidronam pentasodium (USAN); Samarium (153Sm) lexidronam sodium (JA

Hotel Stouffer's Atlanta Inn. - Georgia (EE. UU.

Directory of Open Access Journals (Sweden)

Heery, -

1976-04-01

Full Text Available On a large 4-storey base structure rises a long, rather narrow 27-story tower. The 37,000 m2 of the hotel are distributed in the following manner: 525 hotel rooms, special suites, convention hall, meeting rooms; three restaurants with different interior decorations; ball room; cafeterias, shops; swimming-pools; additional installations that correspond to this hotel category. A chapter of great importance in the construction of the hotel was the interior planning and design. Different colour schemes, special furniture and a most varied selection of decorative and functional elements have been used. The materials and design of the exterior have been chosen with utmost care, whereby a contrast, though not a clash, with the adjacent buildings has been achieved. The hotel is completed with a 1,000-car parking deck, situated across the street and connected with the hotel by means of an over Street bridge.Está constituido por una amplia base de cuatro plantas, sobre la que se eleva una alta y esbelta torre de 27 plantas. En sus 37.000 m2 de superficie total se distribuyen: 525 habitaciones para clientes, incluyendo suites de categorías distintas; gran salón de congresos y salas de juntas y reuniones; tres restaurantes con distintas ambientaciones; sala de baile; cafeterías, tiendas; piscinas; y toda una serie de servicios propios de un hotel de esta categoría. Un capítulo de gran importancia en la construcción del hotel fue la ambientación interior, conseguida con diferentes esquemas de color, mobiliario especial y los más variados elementos decorativos y funcionales. El exterior también fue muy cuidado, empleándose materiales y diseños que contrastan, sin desentonar, con los edificios vecinos. El hotel se completa con un aparcamiento cubierto, de 1.000 plazas, situado al otro lado de la calle, y al que se une mediante un puente elevado.

75 FR 12519 - Notice of Intent To Prepare an Environmental Impact Statement for Beddown of Training F-35A Aircraft

Science.gov (United States)

2010-03-16

..., at Buena High School Cafeteria, 5225 Buena School Road, Sierra Vista, Arizona; Holloman Air Force... Mexico; Wednesday, April 14, 2010 at La Quinta Inn and Suites, 200 E 19th Street, Roswell, New Mexico...

77 FR 27742 - Notice of Public Meetings for the Draft Environmental Impact Statement/Overseas Environmental...

Science.gov (United States)

2012-05-11

..., VA; 5. June 12, 2012 (Tuesday) at Hampton Inn and Suites Swansboro, 215 Old Hammock Road, Swansboro... 32202. 14. Kill Devil Hills Branch Library, Main Library, 400 Mustian Street, Kill Devil Hills, NC 27948...

Dgroup: DG02722 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available stic, TRAIL receptor 1 antibody Agonistic monoclonal antibody TNFRSF10A (TRAILR1, CD261) [HSA:8797] [KO:K04722] ... ... DG02722 Chemical ... DGroup Mapatumumab ... D04858 ... Mapatumumab (USAN/INN) ... Antineopla

Dgroup: DG02668 [KEGG MEDICUS

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Full Text Available DG02668 Chemical ... DGroup Visilizumab ... D06314 ... Visilizumab (USAN/INN) ... Immunosuppressant, Anti-CD3 antibod...y Monoclonal antibody CD3 [HSA:915 916 917] [KO:K06450 K06451 K06452] ...

Dgroup: DG01732 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available (USAN/INN) D09350 ... Indeglitazar (USAN) Antidiabetic agent ... DG01685 ... Insulin sens...itizer ... DG01795 ... PPAR gamma agonist Other ... DG01733 ... PPAR agonist ... Antidiabetics, PPAR agonist NR1C1 (PPARA)

Synovial fluid analysis

Science.gov (United States)

Joint fluid analysis; Joint fluid aspiration ... El-Gabalawy HS. Synovial fluid analysis, synovial biopsy, and synovial pathology. In: Firestein GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelly's Textbook of ...

NCBI nr-aa BLAST: CBRC-XTRO-01-0560 [SEVENS

Lifescience Database Archive (English)

Full Text Available CBRC-XTRO-01-0560 ref|YP_995556.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM56538.1| binding-protein-dependent transport systems

NCBI nr-aa BLAST: CBRC-CPOR-01-1994 [SEVENS

Lifescience Database Archive (English)

Full Text Available CBRC-CPOR-01-1994 ref|YP_995620.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM56602.1| binding-protein-dependent transport systems

NCBI nr-aa BLAST: CBRC-XTRO-01-0287 [SEVENS

Lifescience Database Archive (English)

Full Text Available CBRC-XTRO-01-0287 ref|YP_997917.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM58899.1| binding-protein-dependent transport systems

NCBI nr-aa BLAST: CBRC-XTRO-01-0887 [SEVENS

Lifescience Database Archive (English)

Full Text Available CBRC-XTRO-01-0887 ref|YP_995619.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM56601.1| binding-protein-dependent transport systems

NCBI nr-aa BLAST: CBRC-XTRO-01-0534 [SEVENS

Lifescience Database Archive (English)

Full Text Available CBRC-XTRO-01-0534 ref|YP_994945.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM55927.1| binding-protein-dependent transport systems

Light-Emitting Diodes: Research, Manufacturing, and Applications III

National Research Council Canada - National Science Library

Schubert, E

1999-01-01

.... Red LEDs with an emission wavelength of 680 nm which emission energy was smaller than the band-gap energy of InN were fabricated mainly resulting from the piezoelectric field due to the strain...

Drug: D00107 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00107 Drug Tacrolimus (USAN/INN); Tacrolimus hydrate (JP17); Prograf (TN); Protopic... liver transplant [DS:H00083] Organ rejection in heart transplant [DS:H00083] Atopic dermatitis [DS:H01358

Microstructures of group III-nitrides after implantation with gallium

International Nuclear Information System (INIS)

Kench, P.J.

2001-05-01

High doses of gallium have been implanted into layers of aluminium nitride (AIN), indium nitride (InN) and amorphous silicon nitride (a-SiN x ) in an attempt to bond gallium with nitrogen and form binary or ternary alloys. The microstructure of the resultant layers have been characterised using, principally, transmission electron microscopy and X-ray photoelectron spectroscopy. The implantation of a high dose of Ga ions into AIN was successful in synthesising a GaN/GaAlN compound. The resultant layers were largely uniform but contained aluminium precipitates near the surface. These precipitates were pure Al and were most common in the region associated with the maximum Ga concentration. Deconvolution of X-ray photoelectron spectroscopy peaks indicated that Ga existed in a number of chemical states, including the nitride. Electron diffraction patterns from the implanted layers were closely indexed to both AIN and GaN. A further N implant was used to reduce the concentration of the aluminium precipitates and increase the concentration of GaN bonds. The yield of Ga-N bonds dramatically increased and a reduction in the concentration of Al precipitates was observed. Laser and thermal annealing was performed on the implanted AIN substrates. The near surface regions of the implanted specimens appeared to free of precipitates and bubbles. Laser annealing did have a noticeable effect on the electrical and optical properties of the layers. After laser annealing the conductivity of the Ga implanted layer was lower, indicating that the quality of the material had improved. PL measurements showed that a new PL peak at 2.6 eV appeared after laser annealing. It has been found that implanting InN with gallium can yield Ga-N bonds. However, Ga implants into InN were not as successful at synthesising GaN compounds as those by implanting Ga into AIN, due to the low thermal stability of InN. The implanted InN layers were very irregular and contained large indium precipitates and

Dgroup: DG00591 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00591 Chemical ... DGroup Meropenem ... D08185 ... Meropenem (INN) D02222 ... Meropenem (USP); Meropene...n group ... DG01458 ... Carbapenem ATC code: J01DH02 beta-Lactam antibiotics, carbapenem penicillin binding protein ...

Aed, imelise rahu paik / Merilen Mentaal

Index Scriptorium Estoniae

Mentaal, Merilen, 1972-

2008-01-01

Chelsea Flower Show 2008 võistelnud aedadest. Kujundajateks Philip Nash, Andy Sturgeon, Buono Gazerwitz, Trevor Tooth, Philip Nixon, Thomas Hoblyn, Robert Myers, Tom Stuart-Smith, Yvonne Innes ja Olivia Harrison. 11 värv. ill

Mitmekesine, mitmel viisil kesine / Ly Lestberg

Index Scriptorium Estoniae

Lestberg, Ly, 1965-

2004-01-01

Arvustus: Robbe-Grillet, Alain. Džinn : punane auk ebaühtlaste sillutuskivide vahel : moodsa aja lugemik = Djinn : un trou rouge entre les pavés disjoints / Heli Alliku tõlge. [Tallinn] : Valgus, 2004. (Homo ludens)

[Raamat] / Tarmo Rajamets

Index Scriptorium Estoniae

Rajamets, Tarmo, 1969-

2004-01-01

Tutvustus: Robbe-Grillet, Alain. Džinn : punane auk ebaühtlaste sillutuskivide vahel : moodsa aja lugemik = Djinn : un trou rouge entre les pavés disjoints / Heli Alliku tõlge. [Tallinn] : Valgus, 2004. (Homo ludens)

Dgroup: DG01612 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ne ... D07944 ... Fenetylline (INN) ... D04147 ... Fenethylline hydrochloride (USAN) DG00974 ... Caffeine ... D00528 ... Caffeine... (USP); Anhydrous caffeine (JP17) ... D01453 ... Caffeine hydrate (JP17) ... D07603 ... Caffeine citrate (USP) ...

Drug: D08224 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08224 Drug Mitoxantrone (INN); Misostol (TN) ... C22H28N4O6 D08224.gif ... Antineoplastic ... DG01727 ... Anthraquin...one antineoplastic Other ... DG01529 ... Topoisomerase inhibitor ... DG01527 ... Topoisomerase

Curing Children's Cancer

Science.gov (United States)

... Madelen, after chemotherapy. Her parents, father José and mother Julia, say, "Nobody wants to be in this ... friends easily, even with the shyest kids. They love to play together at The Children's Inn at ...

Dgroup: DG01663 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01663 DGroup alpha-Glucosidase inhibitor -bose, -glustat ... DG01803 ... Antidiabetic,...at ... D09605 ... Duvoglustat (USAN/INN) ... D09606 ... Duvoglustat hydrochloride (USAN) Antidiabetic agent ... alpha-glucosidase [KO:K12316 K12317 K12047] ...

Drug: D00595 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00595 Drug Buformin (USAN/INN) ... C6H15N5 D00595.gif ... Antidiabetic agent ... DG01685... ... Insulin sensitizer ... DG01684 ... Biguanide antidiabetic Unclassified ... DG02044 ... Hypoglycemics ... DG01684 ... Biguanide antidiabetic

Drug: D06551 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D06551 Drug Afimoxifene (USAN/INN); Tamogel (TN) ... C26H29NO2 D06551.gif ... Other ... DG01619 ... Clomifene and tam...oxifen derivative ... DG01620 ... Tamoxifene-type antineoplastic ... Selective estrogen r

NCBI nr-aa BLAST: CBRC-XTRO-01-0575 [SEVENS

Lifescience Database Archive (English)

Full Text Available CBRC-XTRO-01-0575 ref|YP_969309.1| binding-protein-dependent transport systems inne...r membrane component [Acidovorax avenae subsp. citrulli AAC00-1] gb|ABM31535.1| binding-protein-dependent transport systems

75 FR 65261 - Virginia Graeme Baker Pool and Spa Safety Act; Public Accommodation

Science.gov (United States)

2010-10-22

... Condominium Ass'n, 2005 U.S. Dist. LEXIS 41601 (November 22, 2005) (condominium buildings may be covered as... characteristics normally associated with a hotel, motel, or inn); Thompson v. Sand Cliffs Owners Ass'n, Inc., 1998...

Drug: D05522 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D05522 Drug Pixantrone (USAN/INN); Pixuvri (TN) ... C17H19N5O2 D05522.gif ... Antineoplastic ... DG01727 ... Anthraqu...inone antineoplastic Other ... DG01529 ... Topoisomerase inhibitor ... DG01527 ... Topoisomera

Dgroup: DG01186 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01186 Chemical ... DGroup Gadobenic acid ... D08018 ... Gadobenic acid (INN) D04283 ... Gadobe...nate dimeglumine (USAN); Meglumine gadobenate (JAN) ... ATC code: V08CA08 Non-ionic Contrast medium for NMR-tomography ...

Dgroup: DG01182 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01182 Chemical ... DGroup Gadopentetic acid ... D08006 ... Gadopentetic acid (INN) D01707 ... Gadopen...tetate dimeglumine (JAN/USP) ... D09795 ... Meglumine gadopentetate (JAN) ... ATC code: V08CA01 Contrast medium for NMR-tomography ...

Dgroup: DG01750 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available tical recombination) (JAN) D02745 ... Interferon alfa-2b (USAN); Interferon alfa-2b (genetica... DG01750 Chemical ... DGroup Interferon alpha ... D00745 ... Interferon alfa-2a (USAN/INN); Interferon alfa-2a (gene

Drug: D04966 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D04966 Drug Metformin (USAN/INN) ... C4H11N5 D04966.gif ... Antidiabetic agent ... DG0168...5 ... Insulin sensitizer ... DG01684 ... Biguanide antidiabetic Unclassified ... DG02044 ... Hypoglycemics ... DG01684 ... Biguanide antidiabetic

Drug: D08098 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08098 Drug Ketamine (INN); Tekam (TN) ... C13H16ClNO D08098.gif ... Neuropsychiatric agent ... DG02030 ... Anestheti...cs ... DG02027 ... General anesthetics ... DG02027 ... General anesthetics ... DG01498 ... NMDA rece

Second public meeting of Governor Kaine's Independent Virginia Tech Incident Review Panel

OpenAIRE

Owczarski, Mark

2007-01-01

The second public meeting of Governor Kaine's Independent Virginia Tech Incident Review Panel will convene on Monday, May 21, at The Inn at Virginia Tech and Skelton Conference Center Latham Ballroom, 901 Prices Fork Road in Blacksburg.

Drug: D05817 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D05817 Drug Seletracetam (USAN/INN) ... C10H14F2N2O2 D05817.gif ... Neuropsychiatric agent ... DG02038 ... Piracetam... antiepileptics Chemical group: DG02506 ... Piracetam derivative Treatment of epilepsy

Drug: D07282 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D07282 Drug Alfaxalone (INN) ... C21H32O3 D07282.gif ... Neuropsychiatric agent ... DG02030 ... Anesthetics... ... DG02027 ... General anesthetics ... DG02027 ... General anesthetics ATC code: N01AX05 ... Steroid ...

Drug: D10735 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available ... Treatment of asthma, psoriasis ... CAS: 952494-46-1 PubChem: 254741696 ChEMBL: CHEMBL3301609 ... ... D10735 Drug Toreforant (USAN/INN) ... C23H32N6 D10735.gif ... Chemical group: DG01866

Dgroup: DG01892 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available tine (INN) ... D01179 ... Duloxetine hydrochloride (JAN/USAN) ... DG00974 ... Caffeine ... D00528 ... Caffeine (USP); Anhydr...ous caffeine (JP17) ... D01453 ... Caffeine hydrate (JP17) ... D07603 ... Caffeine citrate (USP) ... DG00982 ... Tacri

Dgroup: DG01917 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available anib phosphate (JAN) DG01357 ... Varlitinib ... D09689 ... Varlitinib (USAN/INN) ... D09690 ... Varlitinib tosylate (USAN) DG01361 ... Crenolan...ib ... D10102 ... Crenolanib (USAN) ... D10103 ... Crenolanib besylate (USAN) DG01363 ... Toceranib ... D0850

Drug: D00330 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00330 Drug Flurbiprofen (JP17/USP/INN); Ansaid (TN) ... C15H13FO2 D00330.gif ... Anti...-inflammatory ... DG01908 ... Antiinflammatory drug, propionic acid derivatives ... DG01504 ... Nonsteroidal antiinflammatory drug (NSAI

The June 2013 flood in the Upper Danube Basin, and comparisons with the 2002, 1954 and 1899 floods

Science.gov (United States)

Blöschl, G.; Nester, T.; Komma, J.; Parajka, J.; Perdigão, R. A. P.

2013-12-01

The June 2013 flood in the Upper Danube Basin was one of the largest floods in the past two centuries. An atmospheric blocking situation produced precipitation exceeding 300 mm over four days at the northern rim of the Alps. The high precipitation, along with high antecedent soil moisture, gave rise to extreme flood discharges in a number of tributaries including the Tiroler Ache, Saalach, Salzach and Inn. Runoff coefficients ranged from 0.2 in the Bavarian lowlands to 0.6 in the Alpine areas in Austria. Snowfall at high altitudes (above about 1600 m a.s.l.) reduced the runoff volume produced. Precipitation was distributed over two blocks separated by a few hours, which resulted in a single peak, long-duration flood wave at the Inn and Danube. At the confluence of the Bavarian Danube and the Inn, the small time lag between the two flood waves exacerbated the downstream flood at the Danube. Because of the long duration and less inundation, there was less flood peak attenuation along the Austrian Danube reach than for the August 2002 flood. Maximum flood discharges of the Danube at Vienna were about 11 000 m3 s-1, as compared to 10 300, 9600 and 10 500 m3 s-1 in 2002, 1954 and 1899, respectively. This paper reviews the meteorological and hydrological characteristics of the event as compared to the 2002, 1954 and 1899 floods, and discusses the implications for hydrological research and flood risk management.

Dgroup: DG01486 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01486 DGroup Penem -penem DG01486.gif DG00594 ... Faropenem ... D01839 ... Faropenem sodi...um hydrate (JP17) ... D08919 ... Faropenem medoxomil (USAN) DG01213 ... Sulopenem ... D05969 ... Sulopenem (USAN/INN) ... D09672 ... Sulopene

Chemical Reactions at Surfaces. Final Progress Report

Energy Technology Data Exchange (ETDEWEB)

Freud, Hans-Joachim [Max-Planck-Gesellschaft, Berlin (Germany). Fritz-Haber-Inst.

2003-02-21

The Gordon Research Conference (GRC) on Chemical Reactions at Surfaces was held at Holiday Inn, Ventura, California, 2/16-21/03. Emphasis was placed on current unpublished research and discussion of the future target areas in this field.

Drug: D03235 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D03235 Drug Filgrastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (genetica...l recombination) [Filgrastim biosimilar 1] (JAN); Tbo-filgrastim; Filgrastim (genetical re...combination) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetical recombination) [Filgrastim biosimilar3

Drug: D04496 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available oxifen derivative ... DG01620 ... Tamoxifene-type antineoplastic ... DG01621 ... Cloimifene-type osteoporosis agent ... Clomifene, tam... D04496 Drug Idoxifene (USAN/INN) ... C28H30INO D04496.gif ... Other ... DG01619 ... Clomifene and tam

Drug: D03771 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D03771 Drug Diaveridine (USAN/INN) ... C13H16N4O2 D03771.gif ... Antiparasitic ... DG01932 ... Antifolate, antiprotoz...oal ... Veterinary medicine dihydrofolate reductase [KO:K13998] ... CAS: 5355-16-8 Pub

Drug: D03747 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D03747 Drug Ibrolipim (USAN/INN) ... C19H20BrN2O4P D03747.gif ... Antiatherogenic, Antiobesity, Antidyslipi...demia, Anticachexia, And antidiabetes/syndrome X LPL [HSA:4023] [KO:K01059] ... CAS:

Drug: D10691 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available pidemia ... CAS: 738606-46-7 PubChem: 254741652 ChEMBL: CHEMBL3545313 ... ... D10691 Drug Bempedoic acid (USAN/INN) ... C19H36O5 D10691.gif ... Chemical group: DG02133 ... Treatment of dysli

Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

International Nuclear Information System (INIS)

Khanal, D. R.; Levander, A. X.; Wu, J.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

2011-01-01

We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy α particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure

International Nuclear Information System (INIS)

Wu Guoguang; Du Guotong; Gao Fubin; Shen Chunsheng; Li Wancheng; Wang Hui

2012-01-01

An n-InN nanodots/p-Si(1 1 1) heterojunction diode was fabricated by plasma-assisted molecular beam epitaxy. The device shows clear rectifying behaviour with a turn-on voltage of approximately 1.2 V at room temperature. The near-infrared electroluminescence (EL) can be observed under forward bias, which covers a wide wavelength range. In comparison with the photoluminescence spectra, the maximum of the EL spectra has a blueshift which is probably due to the size quantization effect of small-sized InN nanodots and their stronger contribution to the EL intensity. On the other hand, there is an obvious enhancement of the less dominant transitions on the short wavelength side of the EL spectra, which may arise from the recombination of the injected holes with the extremely high-density surface electrons of InN nanodots. (paper)

Drug: D07406 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D07406 Drug Pimethixene (INN); Calmixene (TN) ... C19H19NS D07406.gif ... Neuropsychia... ... CAS: 314-03-4 PubChem: 51091742 ChEMBL: CHEMBL152408 LigandBox: D07406 NIKKAJI: J11.609B ...

operation and effect of presumptions in civil proceedings

African Journals Online (AJOL)

eliasn

particularly since the publication of Thayer's book entitled A Preliminary ...... (c) debts due to hotel keepers, inn-keepers or managers of boarding-houses in ..... not express his intention to rely on the sworn statement of defendant as per Art.

Dgroup: DG02549 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG02549 Chemical ... DGroup Rotigotine ... D05768 ... Rotigotine (JAN/USAN/INN) ... ATC code: N04BC09 Antiparkinson...ian, Dopamine D2 receptor agonist DRD2 [HSA:1813] [KO:K04145] Enzyme: SULT1A1 [HSA:

Drug: D08350 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08350 Drug Pheneticillin (INN); Phenethicillin; PEPC ... C17H20N2O5S D08350.gif ... A...8 ... beta-Lactamase sensitive penicillin ATC code: J01CE05 Chemical group: DG00538 ... Phenethicillin is called

From Patrons to Chefs, a History of Women in Restaurants

Directory of Open Access Journals (Sweden)

Jan Whitaker

2015-08-01

Full Text Available American women have long been involved in public eating places. In Early America a common pattern was set as wives partnered with husbands in operating dining rooms in taverns and inns – and then carried on alone.

effect of environment and nitrogen application on the expression of ...

African Journals Online (AJOL)

Banana 21

2013-04-17

Apr 17, 2013 ... 4Department of Disease and Stress Biology, John Innes Centre, Norwich Research Park, Colney, ... at 26°C.The mother plants of each cultivar were sampled and ..... Harper G, Osuji JO, Heslop-Harrison JS, Hull R (1999b).

Dgroup: DG01796 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available l recombination) (JAN) ... D04540 ... Insulin glulisine (USAN/INN); Insulin glulisine (genetical recombination) (JAN) ... Antidiabetic...logue ATC code: A10AB Antidiabetics INSR (CD220) [HSA:3643] [KO:K04527] ... CYP induction: CYP1A2 [HSA:1544

Drug: D10005 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D10005 Drug Ensulizole (USP/INN); Phenylbenzimidazole sulfonic acid ... C13H10N2O3S D1000...5.gif ... CAS: 27503-81-7 PubChem: 135626726 ChEMBL: CHEMBL1987518 LigandBox: D10005 ...

Drug: D10626 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D10626 Drug Encenicline (USAN/INN) ... C16H17ClN2OS D10626.gif ... Chemical group: DG01852 ... Treatment of cogn...itive disorders ... CAS: 550999-75-2 PubChem: 254741587 ChEMBL: CHEMBL2151572 ...

Drug: D09349 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D09349 Drug Ibipinabant (USAN/INN) ... C23H20Cl2N4O2S D09349.gif ... Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ... DG01754 ... Cannabinoid receptor inverse agonist ... Treatment of obesity CNR1

Drug: D09362 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D09362 Drug Otenabant (USAN/INN) ... C25H25Cl2N7O D09362.gif ... Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ... DG01754 ... Cannabinoid receptor inverse agonist Chemical group: DG01351 ... Treatment of obesity

Drug: D09009 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D09009 Drug Taranabant (USAN/INN) ... C27H25ClF3N3O2 D09009.gif ... Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ... DG01754 ... Cannabinoid receptor inverse agonist ... Treatment of obesity CNR1

Drug: D10662 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D10662 Drug Rimegepant (USAN/INN) ... C28H28F2N6O3 D10662.gif ... Chemical group: DG01845 ... Treatment of migra...ine ... CAS: 1289023-67-1 PubChem: 254741623 ChEMBL: CHEMBL2178422 ...

Drug: D10673 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D10673 Drug Ubrogepant (USAN/INN) ... C29H26F3N5O3 D10673.gif ... Chemical group: DG02134 ... Treatment of migra...ine ... CAS: 1374248-77-7 PubChem: 254741634 ChEMBL: CHEMBL2364638 ...

Dgroup: DG00785 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00785 Chemical ... DGroup Ibandronic acid ... D08056 ... Ibandronic acid (INN) D04486 ... Ibandron...ate sodium (USAN); Ibandronate sodium hydrate (JAN) ... Other ... DG01600 ... Bisphosphonate ATC code: M05BA06 Bisphosphonates FDPS [HSA:2224] [KO:K00787] ...

Dgroup: DG00782 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00782 Chemical ... DGroup Pamidronic acid ... D07281 ... Pamidronic acid (INN) D00941 ... Pamidron...ate disodium (USAN); Pamidronate disodium hydrate (JAN) ... Other ... DG01600 ... Bisphosphonate ATC code: M05BA03 Bisphosphonates FDPS [HSA:2224] [KO:K00787] ...

Drug: D10613 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D10613 Drug Bradanicline (USAN/INN) ... C22H23N3O2 D10613.gif ... Chemical group: DG01849 ... Cognitive and memo...ry enhancement ... CAS: 639489-84-2 PubChem: 254741574 ChEMBL: CHEMBL1258006 ...

Application of social media in a regional design competition: a case study in the Netherlands

NARCIS (Netherlands)

Waal, de R.M.; Kempenaar, J.; Lammeren, van R.J.A.; Stremke, S.

2013-01-01

Many scholars argue for significant stakeholder involvement in landscape planning and design1 (for instance STEINITZ, 2012; BOOHER & INNES, 2002; CRAIG, 1998). Facilitating public engagement can be a challenging task, which involves the sharing of information, enabling citizens to form opinions,

Pop / Tauno Maarpuu

Index Scriptorium Estoniae

Maarpuu, Tauno

2006-01-01

Heliplaatidest: The Fiery Furnaces "Bitter Tea", Ian Gillan "Gillan's Inn", Feeder "The Singels", Phoenix "It's Never Been Like That", Elvis Costello & Allen Toussaint "The River in Reverse", Erinevad esitajad "The New Gold Standard", Erinevad esitajad "R2 Live Vol. 1"

Table of Contents

African Journals Online (AJOL)

David Seward

1999-09-14

Sep 14, 1999 ... invest in the quality of the goods and services with which the marks are .... Traditionally, trademark law grew all over the world with the internal ...... McDonald's Corporation v Joburgers Drive-Inn Restaurant (Pty) Ltd. and ...

Dgroup: DG01715 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01715 DGroup Drugs for nicotine dependence ... DG00994 ... Nicotine ... D03365 ... Nicotine...08669 ... Varenicline (INN) ... D06282 ... Varenicline tartrate (JAN/USAN) ... Other ... DG01718 ... Drugs for addictive disorder ATC code: N07BA Drugs of addictive disorder ...

Drug: D03288 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D03288 Drug Calcium carbimide (INN) ... Ca. CN2 D03288.gif ... Other ... DG01718 ... Drugs f...or addictive disorder ... DG01716 ... Drugs for alcohol dependence Same as: C19113 ATC code: N07BB02 ... CAS: 1

AcEST: BP919540 [AcEST

Lifescience Database Archive (English)

Full Text Available 798|STC_DROME Protein shuttle craft OS=Drosophila melanoga... 29 7.5 sp|A8QA10|ATP23_MALGO Mitochondrial inn...KEVHVFDVYEGEHMEEGKKSVAFSLQYL 772 >sp|P40798|STC_DROME Protein shuttle craft OS=Drosophila melanogaster GN=st

Dgroup: DG01634 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available d hydrate (JP17) ... DG00946 ... Fluvoxamine ... D07984 ... Fluvoxamine (INN) ... D00824 ... Fluvoxamine maleate (JP17/USAN) ... DG00974 ... Caffeine... ... D00528 ... Caffeine (USP); Anhydrous caffeine (JP17) ... D01453 ... Caffeine hydrate (JP17) ... D07603 ... Caffeine

Drug: D09377 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available nt ... DG01968 ... Agents for Alzheimer-type dementia ... Treatment of Alzheimer's disease PSEN1/PSENEN/NCSTN/APH1A... D09377 Drug Semagacestat (USAN/INN) ... C19H27N3O4 D09377.gif ... Neuropsychiatric age

Drug: D03867 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D03867 Drug Dirlotapide (USAN/INN); Slentrol [veterinary] (TN) ... C40H33F3N4O3 D0386...7.gif ... Not for use in humans. veterinary medicine - Treatment of obesity in companion animals (dogs) M

Drug: D07730 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D07730 Drug Cloprostenol (INN); Dalmazin [veterinary] (TN) ... C22H29ClO6 D07730.gif ... ... Prostaglandin derivative veterinary medicine ... CAS: 40665-92-7 PubChem: 51092026 LigandBox: D07730 NIKKAJI: J299.284A ...

Drug: D08391 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08391 Drug Pirlimycin (INN); Pirsue [veterinary] (TN) ... C17H31ClN2O5S D08391.gif ... ... ... Antibacterial ... DG01578 ... Lincosamide antibiotic Chemical group: DG01577 ... Lincosamide Target: 50S ribosomal subunit (veterinary

Dgroup: DG01574 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01574 DGroup Calcium channel alpha-2 delta blocker ... DG01245 ... Gabapentin ... D00332...INN) ... Other ... DG01575 ... Calcium channel blocker ... CACNA2D [HSA:781 9254 55799 93589] [KO:K04858 K04859 K04860 K04861] ...

Band anticrossing effects in highly mismatched semiconductor alloys

Energy Technology Data Exchange (ETDEWEB)

Wu, Junqiao [Univ. of California, Berkeley, CA (United States)

2002-01-01

occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of ~1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

CHOICE OF THE INITIAL TREATMENT FOR MILD TO MODERATE ARTERIAL HYPERTENSION IN MOSCOW PRIMARY PRACTICE

Directory of Open Access Journals (Sweden)

S. V. Gatsura

2015-09-01

Full Text Available Aim. To assess the choice of initial pharmacotherapy of uncomplicated mild to moderate arterial hypertension (HT in Moscow primary care as well as to clear up the influence of regulatory measures on this choice.Material and methods. Results of two similar surveys conducted in 2011-2012 (452 respondents and 2013-2014 (273 respondents were compared to estimate preferences of Moscow primary care physicians regarding initial antihypertensive agents for therapy of uncomplicated mild to moderate HT taking into consideration an influence of regulatory requirement to prescribe medicinal products by international nonproprietary name (INN since July 2012. All participants were proposed to write down their preferred antihypertensive agents for initial mono- or combined therapy of mild to moderate HT with moderate cardiovascular risk and absence of compelling indications.Results. Angiotensin converting enzyme inhibitors (ACEI remained the leading class of antihypertensive agents, though their popularity slightly but significantly declined from 44.4% in 2011-12 to 37.2% in 2013-14 (р<0.05. Angiotensin receptor blockers partially displaced the leaders and increased their popularity from 11.3% in 2011-12 to 18.0% in 2013-14 (р<0.01. ACEI/diuretic combination remained on the 3rd position (16.4% and 15.3% respectively. Beta-blockers and diuretics as monotherapy shared 4th and 5th places in this rating. Calcium channel blockers popularity among Moscow prescribers remained unchanged and poor – 2.1%. The most popular medicine by trade name was Noliprel, perindopril/indapamide fixed combination, – 14.0% and 13.7% of respondents in 2011-12 and 2013-14, respectively. The share of medicine products recommended by INN went up from 11.9% to 22.8% among top-10 popular medications (р<0.01.Conclusion. Blockers of renin-angiotensin-aldosterone system remain the leading drugs for the initial treatment of uncomplicated mild to moderate HT without compelling indications

Transforming the Professoriate: Preparing Women for Careers in Science & Engineering

OpenAIRE

Virginia Tech

2006-01-01

Schedule for 2006's Transforming the Professoriate: Preparing Women for Careers in Science & Engineering Conference. Transforming the Professoriate: Preparing Women for Careers in Science & Engineering took place from July 20 – 22, 2006 at the Inn at Virginia Tech and Skelton Conference Center

Dgroup: DG02550 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG02550 Chemical ... DGroup Entacapone ... D00781 ... Entacapone (JAN/USAN/INN) ... ATC code: N04BX02 Antiparkinson...ian, Antidyskinetic, COMT inhibitor Nitrocactechols COMT [HSA:1312] [KO:K00545] ... CYP inhibition: COMT [HSA:1312], CYP2C9 [HSA:1559

Dgroup: DG01212 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01212 Chemical ... DGroup Imipenem ... D04515 ... Imipenem (INN) D00206 ... Imipenem (USP); Imipene...m hydrate (JP17) Antibacterial ... DG01710 ... beta-Lactam antibiotic ... DG01713 ... Penicillin skeleton group ... DG01458 ... Carbapene...m ... beta-Lactam antibiotics, carbapenem penicillin binding protein ...

76 FR 4574 - Drawbridge Operation Regulations; Oakland Inner Harbor Tidal Canal, Oakland/Alameda, CA, Schedule...

Science.gov (United States)

2011-01-26

... Boating Federation, Hanson Aggregates, Power Engineering, Harbor Bay Maritime, Dutra Group, Oakland Yacht... Association, Aeolian Yacht Club, Briar Rose Yacht Charters, Baytech Marine Service, Heinold's First and Last... Outboard Motor Shop, Waterfront Hotel-Miss Pearl's Restaurant, Encinal Yacht Club, Marina Village Inn...

76 FR 21387 - National Institute of Environmental Health Sciences; Notice of Closed Meetings

Science.gov (United States)

2011-04-15

... applications. Place: Hilton Garden Inn Durham Southpoint, 7007 Fayetteville Road, Durham, NC 27713. Contact....142, NIEHS Hazardous Waste Worker Health and Safety Training; 93.143, NIEHS Superfund Hazardous Substances--Basic Research and Education; 93.894, Resources and Manpower Development in the Environmental...

78 FR 26793 - National Institute of Environmental Health Sciences; Notice of Closed Meetings

Science.gov (United States)

2013-05-08

... evaluate grant applications. Place: Hilton Garden Inn Durham Southpoint Hotel, 7007 Fayetteville Road...--Health Risks from Environmental Exposures; 93.142, NIEHS Hazardous Waste Worker Health and Safety Training; 93.143, NIEHS Superfund Hazardous Substances--Basic Research and Education; 93.894, Resources and...

77 FR 43849 - National Institute of Environmental Health Sciences; Notice of Closed Meeting

Science.gov (United States)

2012-07-26

... applications. Place: Hilton Garden Inn Durham Southpoint, 7007 Fayetteville Road, Durham, NC 27713. Contact... Waste Worker Health and Safety Training; 93.143, NIEHS Superfund Hazardous Substances--Basic Research and Education; 93.894, Resources and Manpower Development in the Environmental Health Sciences; 93.113...

75 FR 13558 - National Institute of Environmental Health Sciences; Notice of Closed Meeting

Science.gov (United States)

2010-03-22

...: Hilton Garden Inn Durham Southpoint, 7007 Fayetteville Road, Durham, NC 27713. Contact Person: Leroy..., NIEHS Hazardous Waste Worker Health and Safety Training; 93.143, NIEHS Superfund Hazardous Substances--Basic Research and Education; 93.894, Resources and Manpower Development in the Environmental Health...

Drug: D10700 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D10700 Drug Dasotraline (USAN/INN) ... C16H15Cl2N D10700.gif ... Chemical group: DG01989 ... Treatment of attent...ion deficit hyperactivity disorder (ADHD) ... CAS: 675126-05-3 PubChem: 254741661 ChEMBL: CHEMBL3301595 ...

Drug: D05406 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D05406 Drug Penamecillin (USAN/INN) ... C19H22N2O6S D05406.gif ... Antibacterial ... DG01...PubChem: 47207081 ChEBI: 131733 ChEMBL: CHEMBL2106988 LigandBox: D05406 NIKKAJI: J7.208G ...

Drug: D00576 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00576 Drug Quinestrol (USAN/INN); Estrovis (TN) ... C25H32O2 D00576.gif ... Other ... DG01584 ... Estr...ogen receptor agonist ... DG01986 ... Estrogen Same as: C07619 ... CAS: 152-43-2 PubChem: 7847642 ChE

Drug: D06252 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D06252 Drug Trodusquemine (USAN/INN) ... C37H72N4O5S D06252.gif ... Treatment of medically significant obes...ity ... CAS: 186139-09-3 PubChem: 47207910 ChEMBL: CHEMBL508583 LigandBox: D06252 ...

Dgroup: DG00781 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00781 Chemical ... DGroup Clodronic acid ... D03545 ... Clodronic acid (USAN/INN) D03544 ... Clodron...ate disodium (USAN); Sodium clodronate hydrate (JAN) D07720 ... Clodronic acid disodium salt Other ... DG01600 ... Bisphosphonate ATC code: M05BA02 Bisphosphonates ...

Dgroup: DG00783 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00783 Chemical ... DGroup Alendronic acid ... D07119 ... Alendronic acid (INN) D00939 ... Alendron...ate sodium (USAN); Alendronate sodium hydrate (JP17) ... Other ... DG01600 ... Bisphosphonate ATC code: M05BA04 Bisphosphonates FDPS [HSA:2224] [KO:K00787] ...

2009 Analysis Platform Review Report

Energy Technology Data Exchange (ETDEWEB)

Ferrell, John [Office of Energy Efficiency and Renewable Energy (EERE), Washington, DC (United States

2009-12-01

This document summarizes the recommendations and evaluations provided by an independent external panel of experts at the U.S. Department of Energy Biomass Program’s Analysis platform review meeting, held on February 18, 2009, at the Marriott Residence Inn, National Harbor, Maryland.

Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics

KAUST Repository

Wang, Zhong Lin

2010-01-01

Due to the polarization of ions in a crystal that has non-central symmetry, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. For materials such as ZnO, GaN, and InN in the wurtzite structure family

Dgroup: DG00684 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00684 Chemical ... DGroup Tioguanine ... D08603 ... Tioguanine (INN) D06109 ... Thioguanine (USP) ... Antineoplastic... ... DG01958 ... Nucleic acid derivative, antineoplastic Unclassified ... DG02018 ... Antimetabo...lite ... DG01958 ... Nucleic acid derivative, antineoplastic ATC code: L01BB03 Antineoplastics, Antimetabolite ...

Drug: D00131 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00131 Drug Disulfiram (JP17/USP/INN); Antabuse (TN) ... C10H20N2S4 D00131.gif ... Other ... DG01718 ... Drugs... for addictive disorder ... DG01716 ... Drugs for alcohol dependence Cyp inhibitor ... DG01634 ... CY

Drug: D10710 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D10710 Drug Idalopirdine (USAN/INN) ... C20H19F5N2O D10710.gif ... Chemical group: DG01878 ... Treatment of Alzh...eimer's type dementia ... CAS: 467459-31-0 PubChem: 254741671 ChEMBL: CHEMBL3286580 ...

Drug: D02601 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D02601 Drug Phenothiazine (INN); Thiodiphenylamin; Nemazine [veterinary] (TN) ... C12...H9NS D02601.gif ... veterinary medicine ... CAS: 92-84-2 PubChem: 17396771 ChEMBL: CHEMBL828 LigandBox: D02601 NIKKAJI: J3.932B ...

Drug: D00383 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D00383 Drug Trandolapril (JAN/INN); Mavik (TN) ... C24H34N2O5 D00383.gif ... Cardiovas... DG01501 ... Angiotensin-converting enzyme inhibitor Therapeutic category: 2144 ATC code: C09AA10 ... Active form of prodrug: Trandolap

Dgroup: DG01277 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG01277 Chemical ... DGroup Pirlindole ... D08392 ... Pirlindole (INN) D08393 ... Pirlindole hydrochloride Neuropsychi...atric agent ... DG01568 ... MAO inhibitor ... DG01558 ... Monoamine oxidase A inhibitor ... Reversible monoamine oxidase A (MAO-A) inhibitor MAOA [HSA:4128] [KO:K00274] ...

Drug: D08107 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available D08107 Drug Varespladib (USAN/INN) ... C21H20N2O5 D08107.gif ... Chemical group: DG01394 ... Treatment of dyslip...idemia PLA2G [HSA:26279 30814 391013 50487 5319 5320 5322 64600 81579 8399 84647] [

2009 Infrastructure Platform Review Report

Energy Technology Data Exchange (ETDEWEB)

Ferrell, John [Office of Energy Efficiency and Renewable Energy (EERE), Washington, DC (United States)

2009-12-01

This document summarizes the recommendations and evaluations provided by an independent external panel of experts at the U.S. Department of Energy Biomass program‘s Infrastructure platform review meeting, held on February 19, 2009, at the Marriott Residence Inn, National Harbor, Maryland.

Simple models for InGaN alloys

International Nuclear Information System (INIS)

Elfituri, Fathi; Hourahine, Ben

2012-01-01

The properties of InGaN alloys are important for many applications in optoelectronics, since their fundamental gap spans the visible range. Calculating properties, particularly for InN, is theoretically challenging, especially to obtain accurate values for the band gap. We have developed a semi-empirical parametrisation of (In,Ga) N using the density functional based tight binding method (DFTB), where the band gaps of InN and GaN have been empirically corrected to experiment. We demonstrate the performance of this method by calculating a range of properties for the two materials, including elastic constants and carrier effective masses. There are several methods to model alloys of these material, one of the simplest being the virtual crystal approximation, which we apply to derive electronic properties over the whole composition range for InGaN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A multimethodological approach to study the spatial distribution of air pollution in an Alpine valley during wintertime

Directory of Open Access Journals (Sweden)

R. Schnitzhofer

2009-05-01

Full Text Available In order to investigate the spatial distribution of air pollutants in the Inn valley (Tyrol, Austria during wintertime, a joint field campaign of the three research projects ALPNAP (Monitoring and Minimisation of Traffic-Induced Noise and Air Pollution Along Major Alpine Transport Routes, INNAP (Boundary Layer Structure in the Inn Valley during high Air Pollution and INNOX (NO_x-structure in the Inn Valley during High Air Pollution was carried out in January/February 2006. In addition to continuous ground based measurements, vertical profiles of various air pollutants and meteorological parameters were obtained on six selected days. For in-situ investigations, a tethered balloon was used to analyse the lowest atmospheric layers, 0–500 m above the valley bottom (a.v.b., and a research aircraft sampled at 150–2200 m a.v.b. An aircraft equipped with an aerosol backscatter lidar performed nadir measurements at 3000 m a.v.b. Combined results from a typical day show a strongly polluted layer up to about 125 m a.v.b. in the morning. Around midday concentrations on the valley floor decrease indicating some vertical air exchange despite thermally stable conditions. Strong vertical and horizontal gradients with enhanced pollution levels along the sunny side of the valley up to 1300 m a.v.b. were observed in the afternoon. This vertical mixing due to thermally or dynamically driven slope winds reduces the concentration of air pollutants at the bottom of the valley and causes the formation of elevated pollution layers.

The Early Detection of Pancreatic Cancer in the U.S. Military

Science.gov (United States)

2015-10-01

Yordanov, Bethany Delcuze, Brianna Creighton, Kevin Wright, Youngkyu Park, Folkert H.M. Morsink, I. Quintus Molenaar , Inne H. Borel Rinkes, Edwin...Pancreatic Cancer. Cell 160, 324-338. * Co-first authors • DoD support was acknowledged Books or other non-periodical, one-time publications

Dgroup: DG00464 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG00464 Chemical ... DGroup Estrone ... D00067 ... Estrone (JAN/USP/INN) D00312 ... Estrone sodium sulfate D00948 ... Est...ropipate (USP) ... Other ... DG01584 ... Estrogen receptor agonist ... DG01986 ... Estrogen ATC code: G03CA07 G03CC04 Est

Dgroup: DG02639 [KEGG MEDICUS

Lifescience Database Archive (English)

Full Text Available DG02639 Chemical ... DGroup Erlizumab ... D04045 ... Erlizumab (USAN/INN) ... Immunosuppressant, Anti-CD18 antibody... Monoclonal antibody Immunosuppressant, Anti-CD18 antibody LTBR (TNFRSF3, CD18) [HSA:4055] [KO:K03159] ITGAL (CD11A) [HSA:3683] [KO:K05718] ...