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Sample records for ingan single quantum

  1. Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Jemsson, Tomas; Machhadani, Houssaine; Karlsson, K. Fredrik; Hsu, Chih-Wei; Holtz, Per-Olof [Department of Physics, Chemistry, and Biology (IFM), Semiconductor Materials, Linköping University, S-58183 Linköping (Sweden)

    2014-08-25

    We report on the observation of linearly polarized single photon antibunching in the excitonic emission from a site-controlled InGaN quantum dot. The measured second order coherence function exhibits a significant dip at zero time difference, corresponding to g{sub m}{sup 2}(0)=0.90 under continuous laser excitation. This relatively high value of g{sub m}{sup 2}(0) is well understood by a model as the combination of short exciton life time (320 ps), limited experimental timing resolution and the presence of an uncorrelated broadband background emission from the sample. Our result provides the first rigorous evidence of InGaN quantum dot formation on hexagonal GaN pyramids, and it highlights a great potential in these dots as fast polarized single photon emitters if the background emission can be eliminated.

  2. The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

    Science.gov (United States)

    Tsutsumi, Toshiaki; Alfieri, Giovanni; Kawakami, Yoichi; Micheletto, Ruggero

    2017-01-01

    We show for the first time that photoluminescence of InGaN single quantum wells (SQW) devices is related to the gas pressure in which the sample is immersed, also we give a model of the phenomena to suggest a possible cause. Our model shows a direct relation between experimental behavior and molecular coverage dynamics. This strongly suggests that the driving force of photoluminescence decrease is oxygen covering the surface of the device with a time dynamics that depends on the gas pressure. This aims to contribute to the understanding of the physical mechanism of the so-called optical memory effect and blinking phenomenon observed in these devices.

  3. The relation between optical instabilities and absorbed material in photoluminescence with [0001] InGaN single quantum well

    CERN Document Server

    Tsutsumi, T; Kawakami, Y; Micheletto, R

    2016-01-01

    In this letter, we aim to elucidate the physical mechanism of the so called optical memory effect and blinking phenomenon observed in InGaN single quantum wells (SQW). We have found that the optical response of both memory effect and blinking phenomenon, is affected by different excitation wavelengths and by the change of gas adsorption on the crystal surface. A model that reproduce dynamics of the coverage of absorbed gas molecules on the sample surface is given and compared with experimental data with evident match.

  4. Growth of semipolar (1\\bar{1}01) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)

    Science.gov (United States)

    Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2016-05-01

    Low-toxity high-In-content InGaN is an attractive option for short-distance communications through plastic optical fibers because its performance is only slightly affected by temperature. However, its fabrication on the c-plane is impaired by In droplets and V pits, which form at low-growth temperature. On the other hand, unlike the c-plane, (1\\bar{1}01) InGaN relaxes with tilting. Therefore, in this study, we first grew a high-In-content InGaN single layer, and then we fabricated an InGaN tilting layer between (1\\bar{1}01) InGaN-based multiple quantum wells (MQWs) and GaN stripes/(001)Si. The emission wavelength increased with the InGaN tilting layer’s growth time because the strain was relaxed by misfit dislocations at the heterointerface. This layer also extended the emission peak of InGaN/GaN MQWs and increased the photoluminescence intensity with respect to that of a single-layered InGaN. Therefore, the InGaN tilting layer is effective for growing high-In-content (1\\bar{1}01) InGaN MQWs.

  5. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    OpenAIRE

    Yu Kee Ooi; Jing Zhang

    2015-01-01

    Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity c...

  6. Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity

    Energy Technology Data Exchange (ETDEWEB)

    Dartsch, Heiko; Tessarek, Christian; Figge, Stephan; Aschenbrenner, Timo; Kruse, Carsten; Hommel, Detlef [University of Bremen, Institute of Solid State Physics - Semiconductor Epitaxy (Germany); Schowalter, Marco; Rosenauer, Andreas [University of Bremen, Institute of Solid State Physics - Electron Microscopy (Germany)

    2011-07-01

    InGaN quantum dots (QDs) and their implementation into the micro cavity of a vertical distributed Bragg reflector (DBR) resonator are the key elements to achieve single photon emission required for quantum cryptography. However, the epitaxial overgrowth of InGaN QDs is challenging because they are easily destroyed by elevated temperatures. For this reason a common approach is the fabrication of a hybrid cavity structure by non epitaxial deposition of a dielectric top DBR. We present the first successful implementation of electrically driven InGaN QDs into a monolithic GaN/AlInN cavity structure fully epitaxial grown by metal organic vapor phase epitaxy. A single layer of InGaN QDs has been embedded in a n- and p-type doped 5{lambda} GaN cavity surrounded by a 40 fold bottom- and a 10 fold GaN/AlInN top-DBR. The bottom DBR shows a reflectivity of 97%. Structural properties were investigated by scanning transmission microscopy (STEM) and will be discussed. Electroluminescence of the InGaN QDs was achieved by the application of intra cavity contacts. This demonstrates for the first time the possibility of using InGaN QD in fully epitaxial made devices like vertical cavity surface emitting lasers or single photon sources. We present the first successful implementation of electrically driven InGaN QDs into a monolithic GaN/AlInN cavity structure fully epitaxial grown by metal organic vapor phase epitaxy. Therefore a single layer of InGaN QDs has been embedded in a n- and p-type doped 5{lambda} GaN cavity surrounded by a 40 fold bottom- and a 10 fold GaN/AlInN top-DBR. The bottom DBR shows a reflectivity of 97%. Electroluminescence of the InGaN QDs was achieved by the application of intra cavity contacts. Optical and structural properties of the device are discussed. This demonstrates for the first time the possibility of using InGaN QD in fully epitaxial made devices like vertical cavity surface emitting lasers or single photon sources.

  7. Characteristics of long wavelength InGaN quantum well laser diodes

    Science.gov (United States)

    Kim, K. S.; Son, J. K.; Lee, S. N.; Sung, Y. J.; Paek, H. S.; Kim, H. K.; Kim, M. Y.; Ha, K. H.; Ryu, H. Y.; Nam, O. H.; Jang, T.; Park, Y. J.

    2008-03-01

    We demonstrated the long wavelength (485nm) lasing of InGaN laser diodes under continuous wave condition at room temperature over 10mW. Two InGaN laser structures were adapted with different indium composition for InGaN optical confinement layers (OCLs) below quantum wells. The blue shift of electroluminescence (EL) was reduced in InGaN laser diodes grown on 3% In concentration in InGaN OCL compared with 1.5% In concentration in InGaN OCL. The EL peak for laser diode with 3% In concentration in InGaN OCL occurs at longer wavelength for all current levels compared to the laser with 1.5% In concentration in InGaN OCL. In addition, the laterally nonuniform InGaN wells grown on 1.5% In concentration in InGaN OCL was verified by the cross-sectional view of InGaN active layer using high-resolution transmission electron microscopy.

  8. Exciton dynamics in near-surface InGaN quantum wells coupled to colloidal nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii; Shirazi, Roza; Yvind, Kresten;

    2013-01-01

    We study non-radiative energy transfer between InGaN quantum wells and colloidal InP nanocrystals separated by sub-10nm distance. A significant non-radiative energy transfer between the two layers is accompanied by reduced surface recombination in InGaN....

  9. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Directory of Open Access Journals (Sweden)

    Yu Kee Ooi

    2015-05-01

    Full Text Available Phosphor-free monolithic white light emitting diodes (LEDs based on InGaN/ InGaN multiple quantum wells (MQWs on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW and high external quantum efficiency (EQE (∼ 50%. The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28 with correlated color temperature (CCT of ∼ 8200 K at J = 50 A/cm2. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  10. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu [Department of Electrical and Microelectronics Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)

    2015-05-15

    Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  11. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Science.gov (United States)

    Ooi, Yu Kee; Zhang, Jing

    2015-05-01

    Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (˜ 170 mW) and high external quantum efficiency (EQE) (˜ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ˜ 8200 K at J = 50 A/cm2. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  12. RT CW operation of InGaN multi-quantum-well structure laser diodes

    OpenAIRE

    Shuji Nakamura

    1998-01-01

    Gallium nitride and other III–Vnitride-based semiconductors have a direct band gap that is suitable for blue light-emitting devices. The band gap energy of aluminium gallium indium nitride (AIInGaN) varies between 6.2 and 2.0 eV, depending on its composition at room temperature. Thus, using these semiconductors, red to UV emitting devices are fabricated. High efficient UV, blue and green InGaN single-quantum-well (SQW) structure light-emitting diodes (LEDs) have been fabricated with the exter...

  13. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

    Science.gov (United States)

    Dartsch, Heiko; Tessarek, Christian; Aschenbrenner, Timo; Figge, Stephan; Kruse, Carsten; Schowalter, Marco; Rosenauer, Andreas; Hommel, Detlef

    2011-04-01

    We present for the first time electroluminescence from InGaN quantum dots inside a monolithic nitride based cavity. The structure consists of a 40-fold bottom GaN/Al 0.82In 0.18N distributed Bragg reflector (DBR), a single InGaN quantum dot layer inside a 5λ n-type (bottom) and p-type (top) doped GaN cavity and a 10-fold GaN/Al 0.82In 0.18N top DBR. Structural properties have been investigated by scanning transmission electron microscopy. Optical reflectivity measurements are in good agreement with calculations which predict a peak reflectivity of 92% and a quality factor of 220. Electroluminescence shows a pronounced emission at the spectral position of the cavity mode near 500 nm.

  14. White light emitting diode based on InGaN chip with core/shell quantum dots

    Science.gov (United States)

    Shen, Changyu; Hong, Yan; Ma, Jiandong; Ming, Jiangzhou

    2009-08-01

    Quantum dots have many applications in optoelectronic device such as LEDs for its many superior properties resulting from the three-dimensional confinement effect of its carrier. In this paper, single chip white light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chip with luminescent colloidal quantum dots (QDs). Two kinds of QDs of core/shell CdSe /ZnS and core/shell/shell CdSe /ZnS /CdS nanocrystals were synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. This two kinds of QDs exhibited high photoluminescence efficiency with a quantum yield more than 41%, and size-tunable emission wavelengths from 500 to 620 nm. The QDs LED mainly consists of flip luminescent InGaN chip, glass ceramic protective coating, glisten cup, QDs using as the photoluminescence material, pyroceram, gold line, electric layer, dielectric layer, silicon gel and bottom layer for welding. The WLEDs had the CIE coordinates of (0.319, 0.32). The InGaN chip white-light-emitting diodes with quantum dots as the emitting layer are potentially useful in illumination and display applications.

  15. Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers

    Institute of Scientific and Technical Information of China (English)

    吕文彬; 汪莱; 王嘉星; 郝智彪; 罗毅

    2011-01-01

    Single and dual layers oflnGaN quantum dots (QDs) are grown by metal organic chemical vapor deposition. In the former, the density, average height and diameter of QDs are 1.3 x 109 cm"2, 0.93 nm and 65.1 nm, respectively. The latter is grown under the same conditions and possesses a 20 nm low-temperature grown GaN barrier between two layers. The density, average height and diameter of QDs in the upper layer are 2.6 x 1010 cm~2, 4.6urn and 81.3nm, respectively. Two reasons are proposed to explain the QD density increase in the upper layer. First, the strain accumulation in the upper layer is higher, leading to a stronger three-dimensional growth. Second, the GaN barrier beneath the upper layer is so rough it induces growth QDs.%Single and dual layers of InGaN quantum dots(QDs)are grown by metal organic chemical vapor deposition.In the former,the density,average height and diameter of QDs are 1.3 × 109 cm-2,0.93 nm and 65.1 nm,respectively.The latter is grown under the same conditions and possesses a 20 nm low-temperature grown GaN barrier between two layers.The density,average height and diameter of QDs in the upper layer are 2.6 × 1010 cm-2,4.6nm and 81.3nm,respectively.Two reasons are proposed to explain the QD density increase in the upper layer.First,the strain accumulation in the upper layeris higher,leading to a stronger three-dimensional growth.Second,the GaN barrier beneath the upper layer is so rough it induces growth QDs.

  16. MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Veit

    2011-04-18

    The presented work describes the metal organic vapor phase epitaxy and characterization of nitride-based quantum structures which are used in laser heterostructures emitting in the wavelength range between 400 nm and 440 nm. Aiming at current injection and optically pumped laser structures with low threshold current or respectively threshold power densities, the device properties were correlated with the material properties of the indium gallium nitride (InGaN) active region. Furthermore, the influence of the active region and waveguide heterostructure layout on the material gain as well as the modal gain was investigated. In order to understand the InGaN growth process and the formation of structural imperfections, 15 nm-100 nm thick InGaN single layers were deposited on gallium nitride (GaN) on sapphire substrates and analyzed subsequently. It turned out that the spiral pattern of the growth edges around screw dislocations, threading from the substrate to the growth surface, and the formation of additional V-shaped surface defects are the main cause for the deterioration of the crystal perfection of the InGaN. As a result of the transition from a layer-by-layer to a 3D growth regime stable facets with preferred indium incorporation are formed that increase the lateral variation of the indium mole fraction in the layer. The higher indium incorporation at the facets is explained by dynamical elasticity theory and proven by the growth and characterization of InGaN layers on differently oriented GaN. The material properties of the InGaN quantum wells were correlated with laser device properties using 400 nm laser structures: In the case of thin quantum wells the 3D growth results in a lateral variation of the band gap due to variations of the indium mole fraction and the well width. Systematical investigations of laser structures with different band gap fluctuations show an increase of the threshold power density as the lateral variation of the band gap increases. It

  17. Blue InGaN light-emitting diodes with dip-shaped quantum wells

    Institute of Scientific and Technical Information of China (English)

    Lu Tai-Ping; Wang Hai-Long; Yang Xiao-Dong; LiShu-Ti; Zhang Kang; Liu Chao; Xiao Guo-Wei; Zhou Yu-Gang; ZhengShu-Wen; Yin Yi-An; Wu Le-Juan

    2011-01-01

    InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software.It is found that the structure with dipshaped quantum wells shows improved light output power,lower current leakage and less efficiency droop.Based on numerical simulation and analysis,these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).

  18. Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

    Directory of Open Access Journals (Sweden)

    Giovanni Giannoccaro

    2016-01-01

    Full Text Available In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtzite (WZ indium gallium nitride (InGaN self-assembled quantum dot superlattice (QDSL is developed. It considers a simplified cuboid shape for quantum dots (QDs. The semi-analytical investigation starts from evaluation through the three-dimensional (3D finite element method (FEM simulations of crystal mechanical deformation derived from heterostructure lattice mismatch under spontaneous and piezoelectric polarization effects. From these results, mean values in QDs and barrier regions of charge carriers’ electric potentials and effective masses for the conduction band (CB and three valence sub-bands for each direction are evaluated. For the minibands’ investigation, the single-particle time-independent Schrödinger equation in effective mass approximation is decoupled in three directions and resolved using the one-dimensional (1D Kronig–Penney model. The built-in electric field is also considered along the polar axis direction, obtaining Wannier–Stark ladders. Then, theinterminiband absorption coefficient in thermal equilibrium for transverse electric (TE and magnetic (TM incident light polarization is calculated using Fermi’s golden rule implementation based on a numerical integration into the first Brillouin zone. For more detailed results, an absorption coefficient component related to superlattice free excitons is also introduced. Finally, some simulation results, observations and comments are given.

  19. Temperature-dependent fine structure splitting in InGaN quantum dots

    Science.gov (United States)

    Wang, Tong; Puchtler, Tim J.; Zhu, Tongtong; Jarman, John C.; Kocher, Claudius C.; Oliver, Rachel A.; Taylor, Robert A.

    2017-07-01

    We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 and 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single-photon sources.

  20. Electrical injection to contactless near-surface InGaN quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Riuttanen, L., E-mail: lauri.riuttanen@aalto.fi; Svensk, O.; Suihkonen, S. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kivisaari, P.; Oksanen, J. [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

    2015-08-03

    Charge injection to the prevailing and emerging light-emitting devices is almost exclusively based on the double heterojunction (DHJ) structures that have remained essentially unchanged for decades. In this letter, we report the excitation of a near surface indium gallium nitride (InGaN) quantum well (QW) by bipolar carrier diffusion from a nearby electrically excited pn-homojunction. The demonstrated near surface QW emitter is covered only by a 10 nm GaN capping leaving the light-emitting mesa perfectly free of metals, other contact, or current spreading structures. The presented proof-of-principle structure, operating approximately with a quantum efficiency of one fifth of a conventional single QW reference structure, provides conclusive evidence of the feasibility of using diffusion injection to excite near surface light-emitting structures needed, e.g., for developing light emitters or photo-voltaic devices based on nanoplasmonics or free-standing nanowires. In contrast to the existing DHJ solutions or optical pumping, our approach allows exciting nanostructures without the need of forming a DHJ, absorbing layers or even electrical contacts on the device surface.

  1. RT CW operation of InGaN multi-quantum-well structure laser diodes

    Directory of Open Access Journals (Sweden)

    Shuji Nakamura

    1998-01-01

    Full Text Available Gallium nitride and other III–Vnitride-based semiconductors have a direct band gap that is suitable for blue light-emitting devices. The band gap energy of aluminium gallium indium nitride (AIInGaN varies between 6.2 and 2.0 eV, depending on its composition at room temperature. Thus, using these semiconductors, red to UV emitting devices are fabricated. High efficient UV, blue and green InGaN single-quantum-well (SQW structure light-emitting diodes (LEDs have been fabricated with the external quantum efficiencies of 7.5% at 371 nm (UV, 11.2% at 468 nm (blue and 11.6% at 520 nm (green, respectively, which were the highest values ever reported for the LEDs with those shorter emission wavelengths. The luminous efficiencies of blue and green LEDs were 5 lm/W and 30 lm/W, respectively, which values are almost identical to that of the white conventional incandescent bulb lamp (20 lm/W. By combining the blue, green and red LEDs, we could fabricate white LEDs with a luminous efficiency of 20–30 im/W which is almost comparable to that of the incandescent bulb lamp. Thus, we can replace the conventional incandescent bulb lamps with these LEDs in order to save an energy consumption and natural resources now.

  2. Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

    Science.gov (United States)

    Hafiz, Shopan D.; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

    2015-03-01

    Enhancement of coherent zone folded longitudinal acoustic phonon (ZFLAP) oscillations at terahertz frequencies was demonstrated in InGaN multiple quantum wells (MQWs) by using wavelength degenerate time resolved differential transmission spectroscopy. Screening of the piezoelectric field in InGaN MQWs by photogenerated carriers upon femtosecond pulse excitation gave rise to terahertz ZFLAPs, which were monitored at the Brillouin zone center in the transmission geometry. MQWs composed of 10 pairs InxGa1-xN wells and In0.03Ga0.97N barriers provided coherent phonon frequencies of 0.69-0.80 THz depending on the period of MQWs. Dependences of ZFLAP amplitude on excitation density and wavelength were also investigated. Possibility of achieving phonon cavity, incorporating a MQW placed between two AlN/GaN phonon mirrors designed to exhibit large acoustic gaps at the zone center, was also explored.

  3. Near-infrared InN quantum dots on high-In composition InGaN

    Science.gov (United States)

    Soto Rodriguez, Paul E. D.; Gómez, Victor J.; Kumar, Praveen; Calleja, Enrique; Nötzel, Richard

    2013-04-01

    We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

  4. Photoluminescence of localized excitons in InGan quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Usov, S. O., E-mail: S.Usov@mail.ioffe.ru; Tsatsul' nikov, A. F.; Lundin, V. V.; Sakharov, A. V.; Zavarin, E. E.; Ledentsov, N. N. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2008-02-15

    Photoluminescence spectra of samples with ultrathin InGaN layers embedded in AlGaN and GaN matrices are studied experimentally in the temperature range of 80 to 300 K. It is shown that the temperature dependences can be understood in the context of Eliseev's model and that, in the active region of the structures under study, the dispersion {sigma} of the exciton-localization energy depends on the average In content in InGaN-alloy layers. Furthermore, the Urbach energy E{sub U}, which characterizes the localization energy of excitons in the tails of the density of states, was determined from an analysis of the shape of the low-energy slope of the spectrum. It is shown that {sigma} and E{sub U}, quantities representing the scale of the exciton-localization effects, vary linearly with the photoluminescence-peak wavelength in the range from the ultraviolet to the green region of the spectrum.

  5. The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.

    Science.gov (United States)

    Humphreys, C J; Griffiths, J T; Tang, F; Oehler, F; Findlay, S D; Zheng, C; Etheridge, J; Martin, T L; Bagot, P A J; Moody, M P; Sutherland, D; Dawson, P; Schulz, S; Zhang, S; Fu, W Y; Zhu, T; Kappers, M J; Oliver, R A

    2017-02-03

    We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.

  6. Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures.

    Science.gov (United States)

    Chang, Yi-An; Kuo, Yih-Ting; Chang, Jih-Yuan; Kuo, Yen-Kuang

    2012-06-15

    The effect of using chirped multiple quantum-well (MQW) structures in InGaN green light-emitting diodes (LEDs) is numerically investigated. An active structure, which is with both thick QWs with low indium composition on the p-side and thin QWs with high indium composition next to the n-region, is presented in this study. The thickness and indium composition in each single QW is specifically tuned to emit the same green emission spectrum. Comparing with conventional active structure design of green LEDs, which is using uniform MQWs, the output power is increased by 27% at 20 mA, and by 15% at 100 mA current injections. This improvement is mainly attributed to the enhanced efficiency of carrier injection into QWs and the improved capability of carrier transport.

  7. High In Composition InGaN for InN Quantum Dot Intermediate Band Solar Cells

    Science.gov (United States)

    Gómez, Víctor J.; Rodriguez, Paul E. D. Soto; Kumar, Praveen; Calleja, Enrique; Nötzel, Richard

    2013-08-01

    We report a detailed study of the growth of InGaN by plasma assisted molecular beam epitaxy. The In composition is around 55% providing the optimum bandgap in the near-infrared spectral region of the matrix material of quantum dot (QD) intermediate band solar cells. The layer thickness is 80 nm for sufficient absorption. Optimum growth conditions are identified at elevated N flux and reduced growth temperature for minimized phase separation and smooth surface morphology. On these optimized InGaN layers, InN QDs are grown exhibiting small size and high density. Optical emission is observed from both the InGaN layer and InN QDs.

  8. Characteristics of InGaN multiple quantum well blue-violet laser diodes

    Institute of Scientific and Technical Information of China (English)

    LI Deyao; YANG Hui; LIANG Junwu; ZHANG Shuming; WANG Jianfeng; CHEN Jun; CHEN Lianghui; CHONG Ming; ZHU Jianjun; ZHAO Degang; LIU Zongshun

    2006-01-01

    Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.orted. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.

  9. Spin relaxation in InGaN quantum disks in GaN nanowires

    KAUST Repository

    Banerjee, Animesh

    2011-12-14

    The spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D\\'yakonov-Perel\\' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.

  10. Single semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Michler, Peter (ed.) [Stuttgart Univ. (Germany). Inst. fuer Halbleiteroptik und Funktionelle Grenzflaechen

    2009-07-01

    This book reviews recent advances in the exciting and rapidly growing field of semiconductor quantum dots via contributions from some of the most prominent researchers in the scientific community. Special focus is given to optical, quantum optical, and spin properties of single quantum dots due to their potential applications in devices operating with single electron spins and/or single photons. This includes single and coupled quantum dots in external fields, cavity-quantum electrodynamics, and single and entangled photon pair generation. Single Semiconductor Quantum Dots also addresses growth techniques to allow for a positioned nucleation of dots as well as applications of quantum dots in quantum information technologies. (orig.)

  11. Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

    Science.gov (United States)

    Dmukauskas, M.; Kadys, A.; Malinauskas, T.; Grinys, T.; Reklaitis, I.; Badokas, K.; Skapas, M.; Tomašiūnas, R.; Dobrovolskas, D.; Stanionytė, S.; Pietzonka, I.; Strassburg, M.; Lugauer, H.-J.

    2016-12-01

    The paper reports on fully strained green light emitting InGaN/GaN multiple quantum wells, grown by metalorganic vapor phase epitaxy, using metal precursor multiple flow interruptions during InGaN quantum well growth. Optimization of the interruption timing (pulse t 1  =  20 s, pause t 2  =  12 s) lets us reach the integrated photoluminescence enhancement for the growth at temperature 780 ºC. The enhancement, as a function of pause duration, appeared to be pulse duration dependent: a lower enhancement can be achieved using shorter pulses with optimized relatively shorter pauses. Indium evaporation during the interruption time was interpreted as the main issue to keep the layers intact. Quantum wells revealing the highest photoluminescence enhancement were inspected for interface quality, layer thickness, growth speed, strain, surface morphology and roughness by TEM, XRD and AFM techniques, and compared with the one grown in the conventional mode.

  12. Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes

    Directory of Open Access Journals (Sweden)

    Junjie Kang

    2013-07-01

    Full Text Available The optical properties of reversed polarization (RP blue InGaN light-emitting diodes (LEDs under different quantum wells (QWs width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQE, turn on voltage and light output power (LOP of these structures by numerical simulation. It found that QW width has a remarkable influence on the properties of RP blue InGaN LEDs. With the increase of QW width, the turn on voltage and radiation recombination rate decreases. It finds that the optimal width of QWs is about 3 nm at the current injection density of 15 A/cm2.

  13. Significantly improved luminescence properties of nitrogen-polar (0001̅) InGaN multiple quantum wells grown by pulsed metalorganic chemical vapor deposition.

    Science.gov (United States)

    Song, Jie; Chang, Shih-Pang; Zhang, Cheng; Hsu, Ta-Cheng; Han, Jung

    2015-01-14

    We have demonstrated nitrogen-polar (0001̅) (N-polar) InGaN multiple quantum wells (MQWs) with significantly improved luminescence properties prepared by pulsed metalorganic chemical vapor deposition. During the growth of InGaN quantum wells, Ga and N sources are alternately injected into the reactor to alter the surface stoichiometry. The influence of flow duration in pulsed growth mode on the luminescence properties has been studied. We find that use of pulsed-mode creates a high density of hexagonal mounds with an increased InGaN growth rate and enhanced In composition around screw-type dislocations, resulting in remarkably improved luminescence properties. The mechanism of enhanced luminescence caused by the hexagonal mounds is discussed. Luminescence properties of N-polar InGaN MQWs grown with short pulse durations have been significantly improved in comparison with a sample grown by a conventional continuous growth method.

  14. Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    Surface plasmon coupling with light-emitters and surface nano-patterning have widely been used separately to improve low efficiency InGaN light-emitting diodes. We demonstrate a method where dielectric nano-patterning and Ag nanoparticles (NPs) are combined to provide both light extraction...... and internal quantum efficiency enhancement for InGaN/GaN quantum-well light-emitters. By fabricating dielectric nano-rod pattern on the GaN surface, an optical coating that improves the light extraction is obtained, and furthermore has a low refractive index which blue-shifts the plasmonic resonance of Ag NPs...

  15. Theoretical Limit to the Laser Threshold Current Density in an InGaN Quantume Well Laser

    Energy Technology Data Exchange (ETDEWEB)

    Amano, H; Chow, W W; Han, J

    1998-10-09

    This paper describes an investigation of the spontaneous emission limit to the laser threshold current density in an InGaN quantum well laser. The peak gain and spontaneous emission rate as functions of carrier density are com- puted using a microscopic laser theory. From these quantities, the minimum achievable threshold current density is determined for a given threshold gain. The dependence on quantum well width, and the effects of inhomogeneous broadening due to spatial alloy variations are discussed. Also, comparison with experiments is made.

  16. Effects of exciton localization on internal quantum efficiency of InGaN nanowires

    Science.gov (United States)

    Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    2013-10-01

    The optical properties of InGaN nanowires with different emission wavelengths of 485, 515, 555, and 580 nm have been studied by means of photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. The PL peak energy of the nanowires exhibited an anomalous shift to higher energy and then to lower energy with increasing temperature. Analysis of the temperature-dependent variations in the PL peak energy let us evaluate the localization energies of excitons, which increased with increasing indium composition. TRPL measurements also revealed that the PL decay time of the nanowires increased and then became constant with decreasing emission energy, which was typical of localized excitons and enabled us to evaluate the characteristic energies of localized states. The characteristic energy increased with increasing indium composition, indicating that the density of localized states broadened with increasing indium composition. In addition, a correlation was clearly observed between the internal quantum efficiency (IQE) and localization energy of the nanowire: the IQE increased with increasing localization energy. The increase in the IQE was attributed to the increase in the degree of exciton localization as the indium composition of the nanowire increased. Moreover, it was found that with increasing excitation power density, a reduction in the IQE occurred simultaneously with a PL blue shift. This indicated that the reduction in the IQE was associated with saturation of localized states.

  17. Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Fengzai; Zhu, Tongtong; Oehler, Fabrice; Fu, Wai Yuen; Griffiths, James T.; Massabuau, Fabien C.-P.; Kappers, Menno J.; Oliver, Rachel A., E-mail: rao28@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Martin, Tomas L.; Bagot, Paul A. J.; Moody, Michael P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

    2015-02-16

    Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.

  18. Gain-switching dynamics in optically pumped single-mode InGaN vertical-cavity surface-emitting lasers.

    Science.gov (United States)

    Chen, Shaoqiang; Asahara, Akifumi; Ito, Takashi; Zhang, Jiangyong; Zhang, Baoping; Suemoto, Tohru; Yoshita, Masahiro; Akiyama, Hidefumi

    2014-02-24

    The gain-switching dynamics of single-mode pulses were studied in blue InGaN multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) through impulsive optical pumping. We measured the shortest single-mode pulses of 6.0 ps in width with a method of up-conversion, and also obtained the pulse width and the delay time as functions of pump powers from streak-camera measurements. Single-mode rate-equation calculations quantitatively and consistently explained the observed data. The calculations indicated that the pulse width in the present VCSELs was mostly limited by modal gain, and suggested that subpicosecond pulses should be possible within feasible device parameters.

  19. Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet

    Science.gov (United States)

    Mei, Yang; Xu, Rong-Bin; Weng, Guo-En; Xu, Huan; Ying, Lei-Ying; Zheng, Zhi-Wei; Long, Hao; Zhang, Bao-Ping; Hofmann, Werner; Liu, Jian-Ping; Zhang, Jian; Li, Mo; Zhang, Jian

    2017-09-01

    An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Pérot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promising for applications such as in wide-gamut compact displays and projectors.

  20. Radiative transitions in InGaN quantum-well structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapiro, Noad Asaf [Univ. of California, Berkeley, CA (United States)

    2002-01-01

    InGaN based light emitting devices demonstrate excellent luminescence properties and have great potential in lighting applications. Though these devices are already being produced on an industrial scale, the nature of their radiative transition is still not well understood. In particular, the role of the huge (>1MV/cm), built-in electric field in these transitions is still under debate. The luminescence characteristics of InGaN quantum well structures were investigated as a function of excitation power, temperature, and biaxial strain, with an intent of discerning the effects of the electric field and inhomogeneous indium distribution in the QW on the radiative transition. It was found that the luminescence energy did not scale only with the indium concentration but that the QW thickness must also be taken into account. The thickness affects the transition energy due to quantum confinement and carrier separation across a potential drop in the QW. The luminescence peak width was shown to increase with increased indium fraction, due to increased indium inhomogeneity. The carrier lifetime increased exponentially with QW thickness and luminescence wavelength, due to increased carrier separation. Measuring the luminescence energy and carrier lifetime as a function of excitation density showed that the electric field can be screened by strong excitation and, as a consequence, the carrier separation reduced. The temperature dependence of the luminescence showed evidence for bandtails in the density of states, a phenomenon that has been previously related to transition in indium-rich nano-clusters, yet could be accounted for by fluctuations in other parameters that affect the transition energy. Room temperature luminescence efficiency was shown to weakly decrease with increased QW thickness. The application of biaxial strain resulted in either a redshift or blueshift of the luminescence, depending on the sample. The direction and magnitude of the shift in luminescence

  1. Radiative transitions in InGaN quantum-well structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapiro, Noad Asaf

    2002-06-27

    InGaN based light emitting devices demonstrate excellent luminescence properties and have great potential in lighting applications. Though these devices are already being produced on an industrial scale, the nature of their radiative transition is still not well understood. In particular, the role of the huge (>1MV/cm), built-in electric field in these transitions is still under debate. The luminescence characteristics of InGaN quantum well structures were investigated as a function of excitation power, temperature, and biaxial strain, with an intent of discerning the effects of the electric field and inhomogeneous indium distribution in the QW on the radiative transition. It was found that the luminescence energy did not scale only with the indium concentration but that the QW thickness must also be taken into account. The thickness affects the transition energy due to quantum confinement and carrier separation across a potential drop in the QW. The luminescence peak width was shown to increase with increased indium fraction, due to increased indium inhomogeneity. The carrier lifetime increased exponentially with QW thickness and luminescence wavelength, due to increased carrier separation. Measuring the luminescence energy and carrier lifetime as a function of excitation density showed that the electric field can be screened by strong excitation and, as a consequence, the carrier separation reduced. The temperature dependence of the luminescence showed evidence for bandtails in the density of states, a phenomenon that has been previously related to transition in indium-rich nano-clusters, yet could be accounted for by fluctuations in other parameters that affect the transition energy. Room temperature luminescence efficiency was shown to weakly decrease with increased QW thickness. The application of biaxial strain resulted in either a redshift or blueshift of the luminescence, depending on the sample. The direction and magnitude of the shift in luminescence

  2. QUANTUM CRYPTOGRAPHY: Single Photons.

    Science.gov (United States)

    Benjamin, S

    2000-12-22

    Quantum cryptography offers the potential of totally secure transfer of information, but as Benjamin discusses in this Perspective, its practical implementation hinges on being able to generate single photons (rather than two or more) at a time. Michler et al. show how this condition can be met in a quantum dot microdisk structure. Single molecules were also recently shown to allow controlled single-photon emission.

  3. Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

    Science.gov (United States)

    Conroy, M.; Li, H.; Kusch, G.; Zhao, C.; Ooi, B.; Edwards, P. R.; Martin, R. W.; Holmes, J. D.; Parbrook, P. J.

    2016-05-01

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD

  4. Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

    Science.gov (United States)

    Monavarian, Morteza; Rosales, Daniel; Gil, Bernard; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

    2016-02-01

    Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.

  5. Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint

    Science.gov (United States)

    Gómez, V. J.; Gačević, Ž.; Soto-Rodríguez, P. E. D.; Aseev, P.; Nötzel, R.; Calleja, E.; Sánchez-García, M. A.

    2016-08-01

    This work presents a comparative study, based mainly on X-ray diffraction analysis, of compact (~100 nm thick) and uniform single crystal InGaN layers (In content <35%) grown by plasma-assisted molecular beam epitaxy. InGaN layers have been grown directly on Si(111) substrates and on commercially available GaN(0001)-on-sapphire templates.. A high reactivity of atomic N with Si leads to a formation of amorphous SiN on Si substrate, i.e. an indirect crystal-to-crystal InGaN/SiN/Si contact; the weak InGaN interaction with the underlying substrate (weak epitaxial constraint) further leads to poor surface "wetting" and consequent 3D nucleation. The InGaN growth on GaN is, on the other hand, characterized by a direct crystal-to-crystal InGaN/GaN contact; the strong InGaN interaction with the underlying substrate (strong epitaxial constraint) leads to good surface "wetting" and consequent 2D nucleation. All studied InGaN layers show single epitaxial relationship to both Si(111) and GaN(0001)-on-sapphire substrates as well as a relatively good compositional uniformity (no trace of InGaN phase separation). However, layers grown on Si show significantly lower strain and inferior crystallographic uniformity i.e. higher disorder in crystallographic tilt and twist. The surface "wetting" (poor vs. good) and epitaxial constraint (weak vs. strong) are suggested as the main origins of these discrepancies.

  6. Single photon quantum cryptography

    CERN Document Server

    Beveratos, A; Gacoin, T; Villing, A; Poizat, J P; Grangier, P; Beveratos, Alexios; Brouri, Rosa; Gacoin, Thierry; Villing, Andre; Poizat, Jean-Philippe; Grangier, Philippe

    2002-01-01

    We report the full implementation of a quantum cryptography protocol using a stream of single photon pulses generated by a stable and efficient source operating at room temperature. The single photon pulses are emitted on demand by a single nitrogen-vacancy (NV) color center in a diamond nanocrystal. The quantum bit error rate is less that 4.6% and the secure bit rate is 9500 bits/s. The overall performances of our system reaches a domain where single photons have a measurable advantage over an equivalent system based on attenuated light pulses.

  7. Single photon quantum cryptography.

    Science.gov (United States)

    Beveratos, Alexios; Brouri, Rosa; Gacoin, Thierry; Villing, André; Poizat, Jean-Philippe; Grangier, Philippe

    2002-10-28

    We report the full implementation of a quantum cryptography protocol using a stream of single photon pulses generated by a stable and efficient source operating at room temperature. The single photon pulses are emitted on demand by a single nitrogen-vacancy color center in a diamond nanocrystal. The quantum bit error rate is less that 4.6% and the secure bit rate is 7700 bits/s. The overall performances of our system reaches a domain where single photons have a measurable advantage over an equivalent system based on attenuated light pulses.

  8. Growth of non-polar (11-20 InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

    Directory of Open Access Journals (Sweden)

    J. T. Griffiths

    2014-12-01

    Full Text Available Non-polar (11-20 InGaN quantum dots (QDs were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.

  9. Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

    KAUST Repository

    Conroy, Michele Ann

    2016-03-10

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

  10. Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

    Energy Technology Data Exchange (ETDEWEB)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Zuo, Peng; Jia, Haiqiang; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-08-18

    We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20 mA are 0.24 mW and 556.3 nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resulted from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.

  11. Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green

    OpenAIRE

    Weng, Guo-En; Zhao, Wan-Ru; Chen, Shao-Qiang; Akiyama, Hidefumi; Li, Zeng-Cheng; Liu, Jian-Ping; Zhang, Bao-ping

    2015-01-01

    Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K and then decreases with a further increase in temperature at high excitation intensity, while this phenomenon disappeared at low excitation intensity. Under high excitation, about 40% emission enha...

  12. Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects

    Institute of Scientific and Technical Information of China (English)

    CHI Yue-Meng; SHI Jun-Jie

    2006-01-01

    @@ Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF,and the structure parameters of the QD system.

  13. Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

    Institute of Scientific and Technical Information of China (English)

    Cao Wen-Yu; He Yong-Fa; Chen Zhao; Yang Wei; Du Wei-Min; Hu Xiao-Dong

    2013-01-01

    The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs)with a prestrained InGaN interlayer in a laser diode structure are investigated.When the injection current increases from 5 mA to 50 mA,the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure.Also,the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer.The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect (QCSE) in the prestrained sample.Such attributions are supported by the theoretical simulation results,which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample.Therefore,the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.

  14. Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

    Science.gov (United States)

    Wang, Xiaoli; Wang, Xiaohui; Jia, Haiqiang; Xing, Zhigang; Chen, Hong

    2010-03-01

    Tremendous progress has been achieved in white light-emitting diodes (LEDs). To further improve the quality of white light and simplify the fabrication process, a single chip white-light LED with the InGaN underlying layer (UL) was studied and fabricated. The turn-on voltage of this type of LED was 2.7 V, and the spectrum at a forward bias current of 20 mA was comprised of blue (443 nm) and yellow (563 nm) lights. The intensity ratio of blue to yellow light was almost constant with the increasing injection current in a certain scope, most important for the solid state illumination. The useful life test showed the light output level remained at a 90% light output level at the driving current of 40 mA after 300 h, meanwhile, the UV and blue LEDs combined with phosphor reached a 20% value after 144 h within 300 h.

  15. Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Tremendous progress has been achieved in white light-emitting diodes (LEDs). To further improve the quality of white light and simplify the fabrication process, a single chip white-light LED with the InGaN underlying layer (UL) was studied and fabricated. The turn-on voltage of this type of LED was 2.7 V, and the spectrum at a forward bias current of 20 mA was comprised of blue (443 nm) and yellow (563 nm) lights. The intensity ratio of blue to yellow light was almost constant with the in- creasing injection current in a certain scope, most important for the solid state illumination. The useful life test showed the light output level remained at a 90% light output level at the driving current of 40 mA after 300 h, meanwhile, the UV and blue LEDs combined with phosphor reached a 20% value after 144 h within 300 h.

  16. Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content

    Energy Technology Data Exchange (ETDEWEB)

    Vaitkevičius, A., E-mail: augustas.vaitkevicius@gmail.com; Mickevičius, J.; Dobrovolskas, D.; Tamulaitis, G. [Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio 9-III, LT-10222 Vilnius (Lithuania); Tuna, Ö.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

    2014-06-07

    The trench defects in InGaN/GaN multiple quantum well structures are studied using confocal photoluminescence (PL) spectroscopy and atomic force microscopy. A strong blueshift (up to ∼280 meV) and an intensity increase (by up to a factor of 700) of the emission are demonstrated for regions enclosed by trench loops. The influence of the difference in the well width inside and outside the trench loops observed by transmission electron microscopy, the compositional pulling effect, the strain relaxation inside the loop, and corresponding reduction in the built-in field on the PL band peak position and intensity were estimated. The competition of these effects is mainly governed by the width of the quantum wells in the structure. It is shown that the PL band blueshift observed within the trench defect loops in the InGaN structures with wide quantum wells is mainly caused by the reduction in efficiency of the quantum-confined Stark effect due to strain relaxation.

  17. Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

    KAUST Repository

    Mishra, Pawan

    2015-05-06

    We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.

  18. Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission

    Science.gov (United States)

    Kowsz, Stacy J.; Pynn, Christopher D.; Wu, Feng; Farrell, Robert M.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

    2016-02-01

    We report a semipolar III-nitride device in which an electrically injected blue light emitting diode optically pumps monolithic long wavelength emitting quantum wells (QWs) to create polarized white light. We have demonstrated an initial device with emission peaks at 440 nm and 560 nm from the electrically injected and optically pumped QWs, respectively. By tuning the ratio of blue to yellow, white light was measured with a polarization ratio of 0.40. High indium content InGaN is required for long wavelength emission but is difficult to achieve because it requires low growth temperatures and has a large lattice mismatch with GaN. This device design incorporates optically pumped QWs for long wavelength emission because they offer advantages over using electrically injected QWs. Optically pumped QWs do not have to be confined within a p-n junction, and carrier transport is not a concern. Thus, thick GaN barriers can be incorporated between multiple InGaN QWs to manage stress. Optically pumping long wavelength emitting QWs also eliminates high temperature steps that degrade high indium content InGaN but are required when growing p-GaN for an LED structure. Additionally, by eliminating electrical injection, the doping profile can instead be engineered to affect the emission wavelength. We discuss ongoing work focused on improving polarized white light emission by optimizing the optically pumped QWs. We consider the effects of growth conditions, including: trimethylindium (TMI) flow rate, InGaN growth rate, and growth temperature. We also examine the effects of epitaxial design, including: QW width, number of QWs, and doping.

  19. The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

    Institute of Scientific and Technical Information of China (English)

    Lu Tai-Ping; Wang Hai-Long; Yang Xiao-Dong; Li Shu-Ti; Zhang Kang; Liu Chao; Xiao Guo-Wei; Zhou Yu-Gang; Zheng Shu-Wen; Yin Yi-An; Wu Le-Juan

    2011-01-01

    InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AIInN electron blocking layer showes improved light output power,lower current leakage,and smaller efficiency droop. Based on numerical simulation and analysis,these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).

  20. Impact of structural properties on the internal quantum efficiency of InGaN - GaN core-shell nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schimpke, Tilman [Osram Opto Semiconductors GmbH, Regensburg (Germany); Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Mandl, Martin; Lugauer, Hans-Juergen; Strassburg, Martin [Osram Opto Semiconductors GmbH, Regensburg (Germany); Schuster, Fabian; Koblmueller, Gregor; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Furthmeier, Stephan; Bougeard, Dominique; Reiger, Elisabeth; Korn, Tobias; Schueller, Christian [Institut fuer Exp. und Angew. Physik, Universitaet Regensburg (Germany)

    2013-07-01

    Core-shell III-nitride nanorods (NRs) have been proposed to solve a major issue in solid-state lighting, the so-called efficiency droop, by significantly increasing the active layer area scaling with the aspect ratio. However, the reported internal quantum efficiencies (IQE) in such core-shell structures are behind best planar LEDs. To study the processes limiting the IQE, position-controlled GaN/InGaN core-shell NRs were grown by MOVPE with diameters between 300 nm and 1.5 μm and aspect ratios of >5. The recombination processes in the InGaN quantum wells were investigated by temperature-dependent and time-resolved PL measurements. In addition, microscopic resolution was applied to correlate the structural properties obtained by SEM and Raman spectroscopy with optical properties. E.g., a double peak emission observed in micro-PL could be related to the semi-polar and non-polar facets of the InGaN quantum wells, respectively. The IQE values were deduced by temperature-dependent and time-resolved PL measurements.

  1. Single quantum dot nanowire photodetectors

    NARCIS (Netherlands)

    Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

    2010-01-01

    We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the line

  2. Single quantum dot nanowire photodetectors

    NARCIS (Netherlands)

    Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.

    2010-01-01

    We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the

  3. Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

    Science.gov (United States)

    Wang, Tong; Puchtler, Tim J.; Patra, Saroj K.; Zhu, Tongtong; Ali, Muhammad; Badcock, Tom J.; Ding, Tao; Oliver, Rachel A.; Schulz, Stefan; Taylor, Robert A.

    2017-08-01

    We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar InGaN without complex device geometry engineering. Here, we present a comprehensive investigation of the polarization properties of these QDs and their origin with statistically significant experimental data and rigorous k·p modeling. The experimental study of 180 individual QDs allows us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that these QDs are highly insensitive to size differences, shape anisotropies, and material content variations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. These features give non-polar InGaN QDs unique advantages in polarization control over other materials, such as conventional polar nitride, InAs, or CdSe QDs. Hence, the ability to generate single photons with polarization control makes non-polar InGaN QDs highly attractive for quantum cryptography protocols.

  4. Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Redaelli, L.; Mukhtarova, A.; Valdueza-Felip, S.; Ajay, A.; Durand, C.; Eymery, J.; Monroy, E. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», CEA-Grenoble, INAC/SP2M, 17 avenue des Martyrs, 38054 Grenoble cedex 9 (France); Bougerol, C.; Himwas, C. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», Institut Néel-CNRS, 25 avenue des Martyrs, 38042 Grenoble cedex 9 (France); Faure-Vincent, J. [Université Grenoble Alpes, 38000 Grenoble (France); CNRS, INAC-SPRAM, F-38000 Grenoble (France); CEA, INAC-SPRAM, F-38000 Grenoble (France)

    2014-09-29

    We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In{sub 0.12}Ga{sub 0.88}N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.

  5. Lateral charge carrier diffusion in InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Danhof, J.; Solowan, H.M.; Schwarz, U.T. [Albert-Ludwigs-Universitaet Freiburg, IMTEK, Georges-Koehler-Allee 106, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg (Germany); Kaneta, A.; Kawakami, Y. [Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto 615-2312 (Japan); Schiavon, D.; Meyer, T.; Peter, M. [Osram Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg (Germany)

    2012-03-15

    We investigated lateral charge carrier transport in indium gallium nitride InGaN/GaN multi-quantum wells for two different samples, one sample emitting green light at about 510 nm and the other emitting cyan light at about 470 nm. For the cyan light emitting sample we found a diffusion constant of 1.2 cm{sup 2}/s and for the green light emitting sample 0.25 cm{sup 2}/s. The large difference in diffusion constant is due to a higher point defect density in the green light emitting quantum wells (QWs) as high indium incorporation tends to reduce material quality. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Houqiang; Lu, Zhijian; Zhao, Yuji [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 (United States)

    2016-06-15

    We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n{sub 0}), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carrier lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.

  7. Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk

    OpenAIRE

    Bardoux, R.; Kaneta, A.; Funato, M.; Kawakami, Y.; Kikuchi, A; Kishino, K.

    2009-01-01

    We report microphotoluminescence spectroscopy performed on individual and ensemble InGaN/GaN quantum disks (Q-disks). The typical spectrum of a single Q-disk exhibited the contribution of localization centers (LCs) formed in the InGaN active layer of the Q-disks, characterized by sharp lines appearing on the low energy side of the spectra. In addition, a broader emission peak identified as the luminescence of the quasi-two-dimensional (2D) InGaN active layer surrounding the LCs appears system...

  8. Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure

    OpenAIRE

    Nikolaev, V.V.; Portnoi, M. E.; Eliashevich, I.

    2001-01-01

    A numerical method based on the transfer matrix technique is developed to calculate the luminescence spectra of complex layered structures with photon recycling. Using this method we show a strong dependence of the emission spectra on the optical eigenmode structure of the device. The enhancement of the photon recycling and the LED external efficiency can be achieved by placing the active regions inside single or coupled microcavities.

  9. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    Energy Technology Data Exchange (ETDEWEB)

    Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2016-02-07

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  10. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Oscar; Jimenez, Juan [GdS-Optronlab, Edificio I+D, Univ. de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Avella, Manuel [GdS-Optronlab, Edificio I+D, Univ. de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Parque Cientifico, Edificio I+D, Univ. de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Bosi, Matteo [IMEM-CNR Institute, Area delle Scienze 37/A, 43124 Fontanini, Parma (Italy); Fornari, Roberto [Institute for Crystal Growth (IKZ), Max Born Str. 2, 12489 Berlin (Germany)

    2010-01-15

    The luminescence emission of InGaN/GaN multi-quantum wells (MQW) is affected by several factors, i.e. the composition, the QW thickness, the piezoelectric field and the high density of threading dislocations. In the case of heterostructures containing several QWs piled up, one has to consider the homogeneity of each QW and the thickness of the barrier layers between them, which have influence on the strain. We present herein a cathodoluminescence (CL) study of a series of InGaN QW structures, paying special emphasis to the problem of the lateral distribution of In, and how it influences the emission properties of the QWs. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

    KAUST Repository

    Marcinkevičius, S.

    2014-09-15

    © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

  12. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

    Energy Technology Data Exchange (ETDEWEB)

    Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Dept. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Kong, X.; Trampert, A. [Paul-Drude-Institut fuer Festkoeperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-05-06

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

  13. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

    Science.gov (United States)

    Albert, S.; Bengoechea-Encabo, A.; Kong, X.; Sanchez-Garcia, M. A.; Calleja, E.; Trampert, A.

    2013-05-01

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

  14. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong [College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002 (China)

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  15. Temperature dependence of interband recombination energy in symmetric (In,Ga)N spherical quantum dot-quantum well

    Energy Technology Data Exchange (ETDEWEB)

    El Ghazi, Haddou, E-mail: hadghazi@gmail.com [LPS, Faculty of Science, Dhar EL Mehrez, BP 1796 Fes-Atlas (Morocco); Special Mathematics, CPGE, 267 Quartier complémentaire Ennahda 1, Rabat (Morocco); Jorio, Anouar [LPS, Faculty of Science, Dhar EL Mehrez, BP 1796 Fes-Atlas (Morocco)

    2014-01-01

    Within the framework of effective-mass approximation and finite parabolic potential barrier, single particle and ground-state interband recombination energies in Core|well|shell based on GaN|(In,Ga)N|GaN spherical QDQW are investigated as a function of the inner and the outer radii. The temperature dependency of effective-mass, band-gap energy and potential barrier is taken into account. Particle eigenvalue and band-gap energy competing effects are speculated to explain our numerical results which show that the interband recombination energy increases when the temperature increases. The results we obtained are in quite good agreement with the findings.

  16. High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers

    Science.gov (United States)

    Lee, Sung-Nam; Son, J. K.; Paek, H. S.; Sung, Y. J.; Kim, K. S.; Kim, H. K.; Kim, H.; Sakong, T.; Park, Y.; Ha, K. H.; Nam, O. H.

    2008-09-01

    InGaN optical confinement layers (OCLs) were introduced into blue-violet AlInGaN-based laser diodes (LDs), resulting in the drastic improvements of lasing performance. Comparing with conventional LD structure, the lowest threshold current density of 2.3kA/cm2 has been achieved by adding 100-nm-thick InGaN OCLs which represented maximum optical confinement factor. Additionally, we observed the high quantum efficiency and the uniform emission intensity distribution of InGaN quantum wells grown on lower InGaN OCL than on typical GaN layer. Upper InGaN OCL can reduce Mg diffusion from p-type layers to InGaN active region by separating the distance between InGaN quantum wells and p-type layers.

  17. Single-electron quantum tomography in quantum Hall edge channels

    Energy Technology Data Exchange (ETDEWEB)

    Grenier, Ch; Degiovanni, P [Universite de Lyon, Federation de Physique Andre Marie Ampere, CNRS-Laboratoire de Physique de l' Ecole Normale Superieure de Lyon, 46 Allee d' Italie, 69364 Lyon Cedex 07 (France); Herve, R; Bocquillon, E; Parmentier, F D; Placais, B; Berroir, J M; Feve, G, E-mail: Pascal.Degiovanni@ens-lyon.fr [Laboratoire Pierre Aigrain, Departement de Physique de l' Ecole Normale Superieure, 24 rue Lhomond, 75231 Paris Cedex 05 (France)

    2011-09-15

    We propose a quantum tomography protocol to measure single-electron coherence in quantum Hall edge channels, and therefore access for the first time the wavefunction of single-electron excitations propagating in ballistic quantum conductors. Its implementation would open the way to quantitative studies of single-electron decoherence and would provide a quantitative tool for analyzing single- to few-electron sources. We show how this protocol could be implemented using ultrahigh-sensitivity noise measurement schemes.

  18. InGaN High Temperature Photovoltaic Cells Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction...

  19. Ga-Polar (In ,Ga )N /GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

    Science.gov (United States)

    Feix, F.; Flissikowski, T.; Sabelfeld, K. K.; Kaganer, V. M.; Wölz, M.; Geelhaar, L.; Grahn, H. T.; Brandt, O.

    2017-07-01

    We investigate the radiative and nonradiative recombination processes in planar (In ,Ga )N /GaN (0001 ) quantum wells and (In,Ga)N quantum disks embedded in GaN (000 1 ¯ ) nanowires using photoluminescence (PL) spectroscopy under both continuous-wave and pulsed excitation. The PL intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence for high internal quantum efficiencies. However, a side-by-side comparison shows that the absolute intensity of the Ga-polar quantum wells is two orders of magnitude higher than that of the N-polar quantum disks. A similar difference is observed for the initial decay time of PL transients obtained by time-resolved measurements, indicating the presence of a highly efficient nonradiative decay channel for the quantum disks. In apparent contradiction to this conjecture, the decay of both samples is observed to slow down dramatically after the initial rapid decay. Independent of temperature, the transients approach a power law for longer decay times, reflecting the fact that recombination occurs between individual electrons and holes with varying spatial separation. Employing a coupled system of stochastic integro-differential equations taking into account both radiative and nonradiative Shockley-Read-Hall recombination of spatially separate electrons and holes as well as their diffusion, we obtain simulated transients matching the experimentally obtained ones. The results reveal that even dominant nonradiative recombination conserves the power-law decay for (In ,Ga )N /GaN {0001 } quantum wells and disks.

  20. Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

    Science.gov (United States)

    Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F.; Sakharov, Alexei V.; Lundin, Wsevolod V.; Nikolaev, Andrei E.; Usov, Sergey O.; Cherkashin, Nikolay; Hÿtch, Martin J.; Karpov, Sergey Yu

    2017-01-01

    The impact of electromechanical coupling on optical properties of light-emitting diodes (LEDs) with InGaN/GaN quantum-dot (QD) active regions is studied by numerical simulations. The structure, i.e. the shape and the average In content of the QDs, has been directly derived from experimental data on out-of-plane strain distribution obtained from the geometric-phase analysis of a high-resolution transmission electron microscopy image of an LED structure grown by metalorganic vapor-phase epitaxy. Using continuum k\\cdot p calculations, we have studied first the lateral and full electromechanical coupling between the QDs in the active region and its impact on the emission spectrum of a single QD located in the center of the region. Our simulations demonstrate the spectrum to be weakly affected by the coupling despite the strong common strain field induced in the QD active region. Then we analyzed the effect of vertical coupling between vertically stacked QDs as a function of the interdot distance. We have found that QCSE gives rise to a blue-shift of the overall emission spectrum when the interdot distance becomes small enough. Finally, we compared the theoretical spectrum obtained from simulation of the entire active region with an experimental electroluminescence (EL) spectrum. While the theoretical peak emission wavelength of the selected central QD corresponded well to that of the EL spectrum, the width of the latter one was determined by the scatter in the structures of various QDs located in the active region. Good agreement between the simulations and experiment achieved as a whole validates our model based on realistic structure of the QD active region and demonstrates advantages of the applied approach.

  1. Performance of a Single Quantum Neuron

    Institute of Scientific and Technical Information of China (English)

    LIFei; ZHAOShengmei; ZHENGBaoyu

    2005-01-01

    Quantum neural network (QNN) is a promising area in the field of quantum computing and quantum information processing. A novel model for quantum neuron is described, a quantum learning algorithm is proposed and its convergence property is investigated. It has been shown, Quantum neuron (QN) has the same convergence property as Conventional neuron (CN) but can attain faster training than Conventional neuron. The computational power of the quantum neuron is also explored.Numerical and graphical results show that this single quantum neuron can implement the Walsh-Hadamard transformation, perform the XOR function unrealizable with a classical neuron and can eliminate the necessity of building a network of neurons to obtain nonlinear mapping.

  2. Carrier trapping induced abnormal temperature dependent photoluminescence properties of novel sandwiched structure InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    He, Juan; Li, Ding; Rajabi, K.; Yang, Wei; Hu, Xiaodong [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Liu, Lei [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215125 (China)

    2014-04-15

    A dual-wavelength LED sample with novel sandwiched structure in high-In-content MQWs is studied by temperature dependent photoluminescence (TDPL) and the abnormal temperature dependence of emission intensity is obtained. The novel MQWs structure which contains staggered quantum wells and an ultra-thin InN interlayer in the wells shows better luminescence property than the reference sample which has conventional quantum wells. Under 325 nm continuous wave laser excitation the LED sample of novel structure exhibits unexpected increasing luminescence intensity as temperature goes up from 140 K to 220 K and reaches its maximum at 220 K. This could be attributed to (1) the carrier redistribution and the novel sandwiched MQWs' high carrier trapping capability; (2) the intrinsic emission property of the MQWs enhanced by improvement of electron-hole overlap and reduction of quantum confined Stark effect (QCSE) and compositional fluctuation. TDPL under 405 nm laser excitation is also measured to support this view. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Experimental Quantum Cloning of Single Photons

    CERN Document Server

    Lamas-Linares, A; Howell, J C; Bouwmeester, D; Lamas-Linares, Antia; Simon, Christoph; Howell, John C.; Bouwmeester, Dik

    2002-01-01

    Although perfect copying of unknown quantum systems is forbidden by the laws of quantum mechanics, approximate cloning is possible. A natural way of realizing quantum cloning of photons is by stimulated emission. In this context the fundamental quantum limit to the quality of the clones is imposed by the unavoidable presence of spontaneous emission. In our experiment a single input photon stimulates the emission of additional photons from a source based on parametric down-conversion. This leads to the production of quantum clones with near optimal fidelity. We also demonstrate universality of the copying procedure by showing that the same fidelity is achieved for arbitrary input states.

  4. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots

    Science.gov (United States)

    Yang, Di; Wang, Lai; Lv, Wen-Bin; Hao, Zhi-Biao; Luo, Yi

    2015-06-01

    Phosphor-free white light-emitting diodes consisting of 4 layers of InGaN/GaN quantum dots and 4 layers of quantum wells have been grown by metal organic chemical vapor deposition. A white emission was demonstrated under electrical injection by mixing the green-yellow light from quantum dots and the blue light from quantum wells. At the injection current of 5 mA, the electroluminescence peak wavelengths of quantum dots and quantum wells were 548 nm and 450 nm, respectively, resulting in the color-rendering index Ra of 62. As the injection current increased, a faster emission enhancement of quantum well and an emission blue shift of the quantum dots were observed, which led to the decrease of Ra.

  5. Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

    Science.gov (United States)

    Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong

    2016-11-01

    A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

  6. Excitation power dynamics of photoluminescence in InGaN /GaN quantum wells with enhanced carrier localization

    Science.gov (United States)

    Kazlauskas, K.; Tamulaitis, G.; Mickevičius, J.; Kuokštis, E.; Žukauskas, A.; Cheng, Yung-Chen; Wang, Hsiang-Cheng; Huang, Chi-Feng; Yang, C. C.

    2005-01-01

    Excitation-power dynamics of near-band-edge photoluminescence (PL) peak position in InxGa1-xN/GaN multiple quantum wells (x˜0.15) was analyzed as a function of well width. The analysis was based on energy reference provided by photoreflectance (PR) spectra. The difference in spectral position of the PR feature and low-excitation PL band (the Stokes Shift) revealed carrier localization energy, which exhibited a remarkable sensitivity to the well width, increasing from 75meV in 2nm wells to about 250meV in 4nm wells. Meanwhile collating of the PR data with the flat-band model for the optical transition energy in quantum wells rendered a relatively weak (0.5MV/cm) built-in piezoelectric field. The blueshift of the PL peak position with increasing photoexcitation power density was shown to be in qualitative agreement with the model of filling of the band-tail states with some contribution from screening of built-in field in the thickest (4nm) wells. Increased incident photon energy resulted in an additional blueshift of the PL peak, which was explained by a nonthermalized distribution of localized carriers and/or carrier localization in the interface region. Our results are consistent with a concept of emission from partially relaxed large In-rich regions with internal band potential fluctuations, which are enhanced with increasing the growth time.

  7. A Single-Atom Quantum Memory

    CERN Document Server

    Specht, Holger P; Reiserer, Andreas; Uphoff, Manuel; Figueroa, Eden; Ritter, Stephan; Rempe, Gerhard

    2011-01-01

    The faithful storage of a quantum bit of light is essential for long-distance quantum communication, quantum networking and distributed quantum computing. The required optical quantum memory must, first, be able to receive and recreate the photonic qubit and, second, store an unknown quantum state of light better than any classical device. These two requirements have so far been met only by ensembles of material particles storing the information in collective excitations. Recent developments, however, have paved the way for a new approach in which the information exchange happens between single quanta of light and matter. This single-particle approach allows one to address the material qubit and thus has fundamental advantages for realistic implementations: First, to combat inevitable losses and finite efficiencies, it enables a heralding mechanism that signals the successful storage of a photon by means of state detection. Second, it allows for individual qubit manipulations, opening up avenues for in situ p...

  8. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

    Science.gov (United States)

    Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F.; Lundin, Wsevolod V.; Sakharov, Alexei V.; Nikolaev, Andrei E.; Korytov, Maxim; Cherkashin, Nikolay; Hÿtch, Martin J.; Karpov, Sergey Yu

    2017-07-01

    We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of

  9. Intraband relaxation time in wurtzite InGaN quantum-well lasers and comparison with experiment

    CERN Document Server

    Park, S H

    1999-01-01

    The intraband relaxation time for wurtzite (WZ) 3.5-nm In sub 0 sub . sub 1 sub 5 Ga sub 0 sub . sub 8 sub 5 N/In sub 0 sub . sub 0 sub 2 Ga sub 0 sub . sub 9 sub 8 N quantum well (QW) lasers is investigated theoretically. The results are also compared with those obtained from fitting the experimental data with a non-Markovian gain model with many-body effects. An intraband relaxation time of 25 fs is obtained from the comparison with experiment, which is in reasonably good agreement with the calculated value of 20 fs at the subband edge. These values are significantly shorter than those (40 - 100 sf) reported for zinc-blende crystals, such as InP and GaAs. This is because the hole effective masses of GaN are larger than those of GaAs and InP.

  10. Quantum Byzantine Agreement with a Single Qutrit

    CERN Document Server

    Bourennane, Mohamed; Zukowski, Marek

    2010-01-01

    Quantum mechanics provides several methods to generate and securely distribute private lists of numbers suitably correlated to solve the Three Byzantine Generals Problem. So far, these methods are based on three-qutrit singlet states, four-qubit entangled states, and three or two pairwise quantum key distribution channels. Here we show that the problem can be solved using a single qutrit. This scheme presents some advantages over previous schemes, and emphasizes the specific role of qutrits in basic quantum information processing.

  11. Coherent optoelectronics with single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de

    2008-11-12

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  12. Coherent optoelectronics with single quantum dots

    Science.gov (United States)

    Zrenner, A.; Ester, P.; Michaelis de Vasconcellos, S.; Hübner, M. C.; Lackmann, L.; Stufler, S.; Bichler, M.

    2008-11-01

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  13. Extraction of information from a single quantum

    OpenAIRE

    Paraoanu, G. S.

    2011-01-01

    We investigate the possibility of performing quantum tomography on a single qubit with generalized partial measurements and the technique of measurement reversal. Using concepts from statistical decision theory, we prove that, somewhat surprisingly, no information can be obtained using this scheme. It is shown that, irrespective of the measurement technique used, extraction of information from single quanta is at odds with other general principles of quantum physics.

  14. Quantum identity authentication with single photon

    Science.gov (United States)

    Hong, Chang ho; Heo, Jino; Jang, Jin Gak; Kwon, Daesung

    2017-10-01

    Quantum identity authentication with single photons is proposed in the paper. It can verify a user's identity without exposing to an authentication key information. The protocol guarantees high efficiency in that it can verify two bits of authentication information using just a single photon. The security of our authentication scheme is analyzed and confirmed in the case of a general attack. Moreover, the proposed protocol is practicable with current technology. Our quantum identity authentication protocol does not require quantum memory registration and any entangled photon sources.

  15. Interfacing single photons and single quantum dots with photonic nanostructures

    CERN Document Server

    Lodahl, Peter; Stobbe, Søren

    2013-01-01

    Photonic nanostructures provide a way of tailoring the interaction between light and matter and the past decade has witnessed a tremendous experimental and theoretical progress on this subject. In particular, the combination with semiconductor quantum dots has proven very successful. This manuscript reviews quantum optics with excitons in single quantum dots embedded in photonic nanostructures. The ability to engineer the interaction strength in integrated photonic nanostructures enables a range of fundamental quantum-electrodynamics experiments on, e.g., spontaneous-emission control, modified Lamb shifts, and enhanced dipole-dipole interaction. Furthermore, highly efficient single-photon sources and giant photon nonlinearities may be constructed with immediate applications for photonic quantum-information processing. The review summarizes the general theoretical framework of photon emission including the role of dephasing processes, and applies it to photonic nanostructures of current interest, such as photo...

  16. Single photon sources with single semiconductor quantum dots

    Science.gov (United States)

    Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

    2014-04-01

    In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

  17. InGaN directional coupler made with a one-step etching technique

    Science.gov (United States)

    Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Zhang, Shuai; Shi, Zheng; Li, Xin; Wang, Yongjin

    2017-06-01

    We propose, fabricate and characterize an on-chip integration of light source, InGaN waveguide, directional coupler and photodiode, in which AlGaN layers are used as top and bottom optical claddings to form an InGaN waveguide for guiding the in-plane emitted light from the InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED). The difference in etch rate caused by different exposure windows leads to an etching depth discrepancy using the one-step etching technique, which forms the InGaN directional coupler with the overlapped underlying slab. Light propagation results directly confirm effective light coupling in the InGaN directional coupler, which is achieved through high-order guided modes. The InGaN waveguide couples the modulated light from the InGaN/GaN MQW-LED and transfers part of light to the coupled waveguide via the InGaN directional coupler. The in-plane InGaN/GaN MQW-photodiode absorbs the guided light by the coupled InGaN waveguide and induces the photocurrent. The on-chip InGaN photonic integration experimentally demonstrates an in-plane light communication with a data transmission of 50 Mbps.

  18. Electronic transport through InGaN heterojunctions

    Science.gov (United States)

    César, Mathieu; Liu, Donping; Guo, Hong

    2012-02-01

    InGaN nanowires have recently sparked great interest for their high tunability and potential in applications like solid-state lighting (LEDs) and concentrated photovoltaics. Determination of device characteristics from first principles modeling is of great importance. In order to treat quantum transport properties of nanoelectronic devices with atomistic disorder, a non-equilibrium vertex correction (NVC) theory was recently developed and implemented into the Keldysh non-equilibrium Green's function (NEGF) -based density functional theory (DFT). NEGF-DFT-NVC enables the representation of disordered structures such as the InGaN heterojunction under non-equilibrium conditions. Electronic and transport properties of a InGaN heterojunction are investigated using this accurate ab initio method.

  19. Coupling single emitters to quantum plasmonic circuits

    Science.gov (United States)

    Huck, Alexander; Andersen, Ulrik L.

    2016-09-01

    In recent years, the controlled coupling of single-photon emitters to propagating surface plasmons has been intensely studied, which is fueled by the prospect of a giant photonic nonlinearity on a nanoscaled platform. In this article, we will review the recent progress on coupling single emitters to nanowires towards the construction of a new platform for strong light-matter interaction. The control over such a platform might open new doors for quantum information processing and quantum sensing at the nanoscale and for the study of fundamental physics in the ultrastrong coupling regime.

  20. Coupling single emitters to quantum plasmonic circuits

    CERN Document Server

    Huck, Alexander

    2016-01-01

    In recent years the controlled coupling of single photon emitters to propagating surface plasmons has been intensely studied, which is fueled by the prospect of a giant photonic non-linearity on a nano-scaled platform. In this article we will review the recent progress on coupling single emitters to nano-wires towards the construction of a new platform for strong light-matter interaction. The control over such a platform might open new doors for quantum information processing and quantum sensing at the nanoscale, and for the study of fundamental physics in the ultra-strong coupling regime.

  1. Quantum teleportation with a quantum dot single photon source.

    Science.gov (United States)

    Fattal, D; Diamanti, E; Inoue, K; Yamamoto, Y

    2004-01-23

    We report the experimental demonstration of a quantum teleportation protocol with a semiconductor single photon source. Two qubits, a target and an ancilla, each defined by a single photon occupying two optical modes (dual-rail qubit), were generated independently by the single photon source. Upon measurement of two modes from different qubits and postselection, the state of the two remaining modes was found to reproduce the state of the target qubit. In particular, the coherence between the target qubit modes was transferred to the output modes to a large extent. The observed fidelity is 80%, in agreement with the residual distinguishability between consecutive photons from the source. An improved version of this teleportation scheme using more ancillas is the building block of the recent Knill, Laflamme, and Milburn proposal for efficient linear optics quantum computation.

  2. Mixed biexcitons in single quantum wells

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Langbein, Wolfgang Werner; Hvam, Jørn Märcher

    1999-01-01

    Biexcitonic complexes in a ZnSe single quantum well are investigated by spectrally resolved four-wave mixing (FWM). The formation of heavy-heavy-hole XXh and of mixed heavy-light-hole XXm biexcitons showing binding energies of Delta(h) = 4.8 meV and Delta(m)= 2.8 meV is identified by polarization...

  3. Single Molecule Applications of Quantum Dots

    DEFF Research Database (Denmark)

    Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.

    2013-01-01

    Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows: 1...

  4. Single Photon Experiments and Quantum Complementarity

    Directory of Open Access Journals (Sweden)

    Georgiev D. D.

    2007-04-01

    Full Text Available Single photon experiments have been used as one of the most striking illustrations of the apparently nonclassical nature of the quantum world. In this review we examine the mathematical basis of the principle of complementarity and explain why the Englert-Greenberger duality relation is not violated in the configurations of Unruh and of Afshar.

  5. Growth and Characterization Studies of InGaN for Optoelectronics, Electronics and Photovoltaic Applications

    Science.gov (United States)

    2007-12-04

    multi-parameter InGaN /GaN QWs with MOCVD for white -light LED fabrication 2. Dislocation-free Nitride --- Patterned growth and coalescence over-growth...multi-parameter InGaN /GaN QWs with MOCVD for white -light LED fabrication Problem: Currently, all solid-state white -light sources use phosphors to...color and white -light light-emitting diodes. Meanwhile, we studied the coupling between surface plasmon and InGaN /GaN quantum wells for enhancing the

  6. III-Nitride high temperature single-photon sources

    Science.gov (United States)

    Bhattacharya, Pallab; Deshpande, Saniya; Frost, Thomas; Hazari, Arnab

    2015-03-01

    Nitride based GaN and InGaN quantum dots are excellent single-photon emitters at high temperature owing to their wide bandgap and large exciton binding energy [1-5]. In this work, two different molecular beam epitaxy (MBE) grown nanostructures have been investigated for single-photon emission: InGaN/GaN disk-in-nanowire and InGaN/GaN self-organized quantum dot. Single-photon emission under both optical and electrical excitation has been observed from a single InGaN quantum contained in a GaN nanowire p-n junction. We demonstrate electrically driven single-photon emission, with a g (2)(0) = 0.35, from a single InGaN quantum dot emitting in the green spectral range (λ=520 nm) up to 125 K. Additionally, a self-organized InGaN/GaN single quantum dot diode was grown and fabricated. Emission from a single quantum dot (λ=620 nm) shows single-photon emission with g(2)(0) = 0.29 at room temperature. On-demand single-photon emission by electrical pumping of the quantum dot at an excitation repetition rate of 200 MHz was demonstrated.

  7. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  8. Opto-electronics on Single Nanowire Quantum Dots

    OpenAIRE

    2010-01-01

    An important goal for nanoscale opto-electronics is the transfer of single electron spin states into single photon polarization states (and vice versa), thereby interfacing quantum transport and quantum optics. Such an interface enables new experiments in the field of quantum information processing. Single and entangled photon-pair generation can be used for quantum cryptography. Furthermore, photons can be used in the readout of a quantum computer based on electron spins. Semiconducting nano...

  9. Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

    Science.gov (United States)

    Ngo, Thi Huong; Gil, Bernard; Damilano, Benjamin; Valvin, Pierre; Courville, Aimeric; de Mierry, Philippe

    2017-08-01

    The variation of the internal quantum efficiency (IQE) of single InGaN quantum well structures emitting from blue to red is studied as a function of the excitation power density and the temperature. By changing the well width, the indium content, and adding a strain compensation AlGaN layer, we could tune the intrinsic radiative recombination rate by changing the quantum confined Stark effect, and we could modify the carrier localization. Strong quantum confined Stark effect and carrier localization induce an increase in the carrier density and then favor Auger non-radiative recombination in the high excitation range. In such high excitation conditions with efficient Auger recombination, the variation of the IQE with the photo-excitation density P is ruled by a universal power law independent of the design: IQE = IQEMAX - a log10P with a close to 1/3. The temperature dependences of the different recombination mechanisms are determined. At low temperature, both quantum confined Stark effect and carrier localization trigger electron-electron repulsions and therefore the onset of the Auger effect. The increase in the value of coefficient C with changing temperature reveals indirect Auger recombination that relates to the interactions of the carriers with other phonons than the longitudinal optical one.

  10. Raman spectroscopy of single quantum well wires

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    We used the micro-Raman spectroscopy to investigate the V-grooved quantum well wires (QWWs), and first observed and assigned the Raman spectra of single QWW. They were the disorder induced modes at 223 and 243 cm-1, confined LO mode of GaAs QWW at 267 cm1, and higher order peaks of disorder induced modes at 488 and 707 cm-1.

  11. Single Ion Quantum Lock-In Amplifier

    CERN Document Server

    Kotler, Shlomi; Glickman, Yinnon; Keselman, Anna; Ozeri, Roee

    2011-01-01

    We report on the implementation of a quantum analog to the classical lock-in amplifier. All the lock-in operations: modulation, detection and mixing, are performed via the application of non-commuting quantum operators on the electronic spin state of a single trapped Sr+ ion. We significantly increase its sensitivity to external fields while extending phase coherence by three orders of magnitude, to more than one second. With this technique we measure magnetic fields with sensitivity of 25 pT/sqrt(Hz) and light shifts with an uncertainty below 140 mHz after 1320 seconds of averaging. These sensitivities are limited by quantum projection noise and, to our knowledge, are more than two orders of magnitude better than with other single-spin probe technologies. In fact, our reported sensitivity is sufficient for the measurement of parity non-conservation, as well as the detection of the magnetic field of a single electronic-spin one micrometer from an ion-detector with nanometer resolution. As a first application ...

  12. SEMICONDUCTOR DEVICES: Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

    Science.gov (United States)

    Xiaoli, Ji; Fuhua, Yang; Junxi, Wang; Ruifei, Duan; Kai, Ding; Yiping, Zeng; Guohong, Wang; Jinmin, Li

    2010-09-01

    Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.

  13. An elementary quantum network of single atoms in optical cavities.

    Science.gov (United States)

    Ritter, Stephan; Nölleke, Christian; Hahn, Carolin; Reiserer, Andreas; Neuzner, Andreas; Uphoff, Manuel; Mücke, Martin; Figueroa, Eden; Bochmann, Joerg; Rempe, Gerhard

    2012-04-11

    Quantum networks are distributed quantum many-body systems with tailored topology and controlled information exchange. They are the backbone of distributed quantum computing architectures and quantum communication. Here we present a prototype of such a quantum network based on single atoms embedded in optical cavities. We show that atom-cavity systems form universal nodes capable of sending, receiving, storing and releasing photonic quantum information. Quantum connectivity between nodes is achieved in the conceptually most fundamental way-by the coherent exchange of a single photon. We demonstrate the faithful transfer of an atomic quantum state and the creation of entanglement between two identical nodes in separate laboratories. The non-local state that is created is manipulated by local quantum bit (qubit) rotation. This efficient cavity-based approach to quantum networking is particularly promising because it offers a clear perspective for scalability, thus paving the way towards large-scale quantum networks and their applications.

  14. Quantum, Photo-Electric Single Capacitor Paradox

    CERN Document Server

    Kapor, Darko

    2009-01-01

    In this work single capacitor paradox (a variation of the remarkable two capacitor paradox) is considered in a new, quantum discrete form. Simply speaking we consider well-known usual, photoelectric effect experimental device, i.e. photo electric cell, where cathode and anode are equivalently charged but non-connected. It, obviously, represents a capacitor that initially, i.e. before action of the photons with individual energy equivalent to work function, holds corresponding energy of the electrical fields between cathode and anode. Further, we direct quantum discretely photons, one by one, toward cathode where according to photo-electrical effect electrons discretely, one by one, will be emitted and directed toward anode. It causes discrete discharge of the cell, i.e. capacitor and discrete decrease of the electrical field. Finally, total discharge of the cell, i.e. capacitor, and total disappearance of the electrical field and its energy will occur. Given, seemingly paradoxical, capacitor total energy loss...

  15. Formation properties of an InGaN active layer for high-efficiency InGaN/GaN multi-quantum-well-nanowire light-emitting diodes

    Science.gov (United States)

    Hwang, Sung Won; Lee, Bongsoo; Choi, Suk-Ho

    2016-09-01

    Nitride-based nanowires (NWs) have several advantages, such as flexibility in choosing a substrate, easy fabrication, large light-emitting area, no internal electric field, enhanced light extraction, and reduced defects by strain relief, that are useful for enhancing the efficiency of light-emitting diodes (LEDs). Here, we report how crucial the formation properties of the InGaN active layer are for enhancing the efficiency of core-shell InGaN/GaN multi-quantum-well (MQW)-NW LEDs that are selectively grown on oxide templates with perfectly-circular hole patterns. The nanostructures are analyzed for two types of LEDs, one containing defect-free MQW active layer and the other containing MQW layer with defects by using high-resolution transmission electron microscopy. The I-V curve of the defect-free LED shows a rectifying behavior with an on/off ratio of ~109, typical of a diode, and the off-state leakage current of the LED with defects is much larger than that of the defect-free LED, resulting in brighter electroluminescence from the latter device. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

  16. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    Energy Technology Data Exchange (ETDEWEB)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280 nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  17. Real-time optical wireless transmissions of digital TV signals using white InGaN LEDs grown with an asymmetric quantum barrier.

    Science.gov (United States)

    Tsai, Chia-Lung; Chen, Yen-Jen

    2015-10-19

    The feasibility of using InGaN LEDs grown with asymmetric barrier layer (ABL) as transmitters in visible light communications is investigated experimentally. Compared with normal LEDs, the improvement in the spontaneous emission rate due to enhanced carrier localization and better uniformity of carrier distribution in ABL-containing MQWs leads to the fabricated LEDs can exhibit a 32.6% (@ 350 mA) increase in emission intensity and a 10.5% increase in modulation bandwidth. After eliminating the slow-responding phosphorescent components emitting from the phosphor-converted white LEDs, an open eye-diagram at 180 Mb/s is demonstrated over a distance of 100 cm in directed line-of-sight optical links. With the use of proposed LEDs, real-time transmissions of digital TV signals over a moderate distance (~100 cm) in free space is shown to be available in a 150 Mbit/s white LED-based optical link with conventional on-off keying modulation.

  18. Single quantum dots fundamentals, applications, and new concepts

    CERN Document Server

    2003-01-01

    This book reviews recent advances in the exciting and rapid growing field of semiconductor quantum dots by contributions from some of the most prominent researchers in the field. Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons. Single Quantum Dots also addresses various growth techniques as well as potential device applications such as quantum dot lasers, and new concepts like a single-photon source, and a single quantum dot laser.

  19. An Elementary Quantum Network of Single Atoms in Optical Cavities

    CERN Document Server

    Ritter, Stephan; Hahn, Carolin; Reiserer, Andreas; Neuzner, Andreas; Uphoff, Manuel; Mücke, Martin; Figueroa, Eden; Bochmann, Jörg; Rempe, Gerhard

    2012-01-01

    Quantum networks are distributed quantum many-body systems with tailored topology and controlled information exchange. They are the backbone of distributed quantum computing architectures and quantum communication. Here we present a prototype of such a quantum network based on single atoms embedded in optical cavities. We show that atom-cavity systems form universal nodes capable of sending, receiving, storing and releasing photonic quantum information. Quantum connectivity between nodes is achieved in the conceptually most fundamental way: by the coherent exchange of a single photon. We demonstrate the faithful transfer of an atomic quantum state and the creation of entanglement between two identical nodes in independent laboratories. The created nonlocal state is manipulated by local qubit rotation. This efficient cavity-based approach to quantum networking is particularly promising as it offers a clear perspective for scalability, thus paving the way towards large-scale quantum networks and their applicati...

  20. Demonstration of quantum permutation algorithm with a single photon ququart.

    Science.gov (United States)

    Wang, Feiran; Wang, Yunlong; Liu, Ruifeng; Chen, Dongxu; Zhang, Pei; Gao, Hong; Li, Fuli

    2015-06-05

    We report an experiment to demonstrate a quantum permutation determining algorithm with linear optical system. By employing photon's polarization and spatial mode, we realize the quantum ququart states and all the essential permutation transformations. The quantum permutation determining algorithm displays the speedup of quantum algorithm by determining the parity of the permutation in only one step of evaluation compared with two for classical algorithm. This experiment is accomplished in single photon level and the method exhibits universality in high-dimensional quantum computation.

  1. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot

    DEFF Research Database (Denmark)

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal

    2016-01-01

    unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width...... quantum optical properties for single photon application and quantum optics.......We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer...

  2. Universal quantum gates for Single Cooper Pair Box based quantum computing

    Science.gov (United States)

    Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

    2000-01-01

    We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

  3. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  4. Quantum transport of the single metallocene molecule

    Science.gov (United States)

    Yu, Jing-Xin; Chang, Jing; Wei, Rong-Kai; Liu, Xiu-Ying; Li, Xiao-Dong

    2016-10-01

    The Quantum transport of three single metallocene molecule is investigated by performing theoretical calculations using the non-equilibrium Green's function method combined with density functional theory. We find that the three metallocen molecules structure become stretched along the transport direction, the distance between two Cp rings longer than the other theory and experiment results. The lager conductance is found in nickelocene molecule, the main transmission channel is the electron coupling between molecule and the electrodes is through the Ni dxz and dyz orbitals and the s, dxz, dyz of gold. This is also confirmed by the highest occupied molecular orbital resonance at Fermi level. In addition, negative differential resistance effect is found in the ferrocene, cobaltocene molecules, this is also closely related with the evolution of the transmission spectrum under applied bias.

  5. Quantum Yield Heterogeneity among Single Nonblinking Quantum Dots Revealed by Atomic Structure-Quantum Optics Correlation.

    Science.gov (United States)

    Orfield, Noah J; McBride, James R; Wang, Feng; Buck, Matthew R; Keene, Joseph D; Reid, Kemar R; Htoon, Han; Hollingsworth, Jennifer A; Rosenthal, Sandra J

    2016-02-23

    Physical variations in colloidal nanostructures give rise to heterogeneity in expressed optical behavior. This correlation between nanoscale structure and function demands interrogation of both atomic structure and photophysics at the level of single nanostructures to be fully understood. Herein, by conducting detailed analyses of fine atomic structure, chemical composition, and time-resolved single-photon photoluminescence data for the same individual nanocrystals, we reveal inhomogeneity in the quantum yields of single nonblinking "giant" CdSe/CdS core/shell quantum dots (g-QDs). We find that each g-QD possesses distinctive single exciton and biexciton quantum yields that result mainly from variations in the degree of charging, rather than from volume or structure inhomogeneity. We further establish that there is a very limited nonemissive "dark" fraction (<2%) among the studied g-QDs and present direct evidence that the g-QD core must lack inorganic passivation for the g-QD to be "dark". Therefore, in contrast to conventional QDs, ensemble photoluminescence quantum yield is principally defined by charging processes rather than the existence of dark g-QDs.

  6. Ivestigation of an InGaN - GaN nanowire heterstructure

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich; Gotschke, Tobias; Stoica, Toma; Calarco, Raffaella; Gruetzmacher, Detlev [Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH, Juelich (Germany); JARA-Fundamentals of Future Information Technology, Juelich (Germany); Sutter, Eli; Ciston, Jim [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY (United States); Cusco, Ramon; Artus, Luis [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Barcelona, Catalonia (Spain); Kremling, Stefan; Hoefling, Sven; Worschech, Lukas [University Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wuerzburg (Germany)

    2011-07-01

    InGaN/GaN nanowire (NW) heterostructures grown by molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multi-faceted InGaN cap wrapping the top part of the GaN NW. Transmission electron microscopy images taken from different parts of a InGaN/GaN nanowire show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it. Photoluminescence spectra of these heterostructure NW ensembles show an emission peak at 2.1 eV. However, {mu}-PL spectra measured on single nanowires reveal much sharper luminescence peaks. A Raman analysis reveals a variation of the In content between 20 % and 30 %, in agreement with PL and TEM investigations.

  7. Single-photon quantum router with multiple output ports.

    Science.gov (United States)

    Yan, Wei-Bin; Fan, Heng

    2014-04-28

    The routing capability is a requisite in quantum network. Although the quantum routing of signals has been investigated in various systems both in theory and experiment, the general form of quantum routing with many output terminals still needs to be explored. Here we propose a scheme to achieve the multi-channel quantum routing of the single photons in a waveguide-emitter system. The channels are composed by the waveguides and are connected by intermediate two-level emitters. By adjusting the intermediate emitters, the output channels of the input single photons can be controlled. This is demonstrated in the cases of one output channel, two output channels and the generic N output channels. The results show that the multi-channel quantum routing of single photons can be well achieved in the proposed system. This offers a scheme for the experimental realization of general quantum routing of single photons.

  8. Single-photon superradiance from a quantum dot

    DEFF Research Database (Denmark)

    Tighineanu, Petru; Daveau, Raphaël Sura; Lehmann, Tau Bernstorff

    2016-01-01

    We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron...... temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies....

  9. Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.

    Science.gov (United States)

    Sheu, Jinn-Kong; Chen, Fu-Bang; Wang, Yen-Chin; Chang, Chih-Chiang; Huang, Shih-Hsien; Liu, Chun-Nan; Lee, Ming-Lun

    2015-04-06

    We present a trichromatic GaN-based light-emitting diode (LED) that emits near-ultraviolet (n-UV) blue and green peaks combined with red phosphor to generate white light with a low correlated color temperature (CCT) and high color rendering index (CRI). The LED structure, blue and green unipolar InGaN/GaN multiple quantum wells (MQWs) stacked with a top p-i-n structure containing an InGaN/GaN MQW emitting n-UV light, was grown epitaxially on a single substrate. The trichromatic LED chips feature a vertical conduction structure on a silicon substrate fabricated through wafer bonding and laser lift-off techniques. The blue and green InGaN/GaN MQWs were pumped with n-UV light to re-emit low-energy photons when the LEDs were electrically driven with a forward current. The emission spectrum included three peaks at approximately 405, 468, and 537 nm. Furthermore, the trichromatic LED chips were combined with red phosphor to generate white light with a CCT and CRI of approximately 2900 and 92, respectively.

  10. Quantum interference of independently generated telecom-band single photons

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Monika [Center for Photonic Communication and Computing, Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3112 (United States); Altepeter, Joseph B.; Huang, Yu-Ping; Oza, Neal N. [Center for Photonic Communication and Computing, Department of Electrical Engineering and Computer Science, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3118 (United States); Kumar, Prem [Center for Photonic Communication and Computing, Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3112, USA and Center for Photonic Communication and Computing, Department of Electrical Engineering (United States)

    2014-12-04

    We report on high-visibility quantum interference of independently generated telecom O-band (1310 nm) single photons using standard single-mode fibers. The experimental data are shown to agree well with the results of simulations using a comprehensive quantum multimode theory without the need for any fitting parameter.

  11. Single-electron Spin Resonance in a Quadruple Quantum Dot

    Science.gov (United States)

    Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo

    2016-08-01

    Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.

  12. Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yujue; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-01-21

    InGaN-based light-emitting diodes (LEDs) with some specific designs on the quantum barrier layers by alternating InGaN barriers with GaN barriers are proposed and studied numerically. In the proposed structure, simulation results show that the carriers are widely dispersed in the multi-quantum well active region, and the radiative recombination rate is efficiently improved and the electron leakage is suppressed accordingly, due to the appropriate band engineering. The internal quantum efficiency and light-output power are thus markedly enhanced and the efficiency droop is smaller, compared to the original structures with GaN barriers or InGaN barriers. Moreover, the gradually decrease of indium composition in the alternating quantum barriers can further promote the LED performance because of the more uniform carrier distribution, which provides us a simple but highly effective approach for high-performance LED applications.

  13. Conversion from Single Photon to Single Electron Spin Using Electrically Controllable Quantum Dots

    Science.gov (United States)

    Oiwa, Akira; Fujita, Takafumi; Kiyama, Haruki; Allison, Giles; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo

    2017-01-01

    Polarization is a fundamental property of light and could provide various solutions to the development of secure optical communications with high capacity and high speed. In particular, the coherent quantum state conversion between single photons and single electron spins is a prerequisite for long-distance quantum communications and distributed quantum computation. Electrically defined quantum dots have already been proven to be suitable for scalable solid state qubits by demonstrations of single-spin coherent manipulations and two-qubit gate operations. Thus, their capacity for quantum information technologies would be considerably extended by the achievement of entanglement between an electron spin in the quantum dots and a photon. In this review paper, we show the basic technologies for trapping single electrons generated by single photons in quantum dots and for detecting their spins using the Pauli effect with sensitive charge sensors.

  14. Coherent manipulation of single quantum systems in the solid state

    Science.gov (United States)

    Childress, Lilian Isabel

    2007-12-01

    The controlled, coherent manipulation of quantum-mechanical systems is an important challenge in modern science and engineering, with significant applications in quantum information science. Solid-state quantum systems such as electronic spins, nuclear spins, and superconducting islands are among the most promising candidates for realization of quantum bits (qubits). However, in contrast to isolated atomic systems, these solid-state qubits couple to a complex environment which often results in rapid loss of coherence, and, in general, is difficult to understand. Additionally, the strong interactions which make solid-state quantum systems attractive can typically only occur between neighboring systems, leading to difficulties in coupling arbitrary pairs of quantum bits. This thesis presents experimental progress in understanding and controlling the complex environment of a solid-state quantum bit, and theoretical techniques for extending the distance over which certain quantum bits can interact coherently. Coherent manipulation of an individual electron spin associated with a nitrogen-vacancy center in diamond is used to gain insight into its mesoscopic environment. Furthermore, techniques for exploiting coherent interactions between the electron spin and a subset of the environment are developed and demonstrated, leading to controlled interactions with single isolated nuclear spins. The quantum register thus formed by a coupled electron and nuclear spin provides the basis for a theoretical proposal for fault-tolerant long-distance quantum communication with minimal physical resource requirements. Finally, we consider a mechanism for long-distance coupling between quantum dots based on chip-scale cavity quantum electrodynamics.

  15. Photonic quantum walk in a single beam with twisted light

    CERN Document Server

    Cardano, Filippo; Karimi, Ebrahim; Slussarenko, Sergei; Paparo, Domenico; de Lisio, Corrado; Sciarrino, Fabio; Santamato, Enrico; Marrucci, Lorenzo

    2014-01-01

    Inspired by the classical phenomenon of random walk, the concept of quantum walk has emerged recently as a powerful platform for the dynamical simulation of complex quantum systems, entanglement production and universal quantum computation. Such a wide perspective motivates a renewing search for efficient, scalable and stable implementations of this quantum process. Photonic approaches have hitherto mainly focused on multi-path schemes, requiring interferometric stability and a number of optical elements that scales quadratically with the number of steps. Here we report the experimental realization of a quantum walk taking place in the orbital angular momentum space of light, both for a single photon and for two simultaneous indistinguishable photons. The whole process develops in a single light beam, with no need of interferometers, and requires optical resources scaling linearly with the number of steps. Our demonstration introduces a novel versatile photonic platform for implementing quantum simulations, b...

  16. Observing single quantum trajectories of a superconducting qubit

    CERN Document Server

    Murch, K W; Macklin, C; Siddiqi, I

    2013-01-01

    The length of time that a quantum system can exist in a superposition state is determined by how strongly it interacts with its environment. This interaction entangles the quantum state with the inherent fluctuations of the environment. If these fluctuations are not measured, the environment can be viewed as a source of noise, causing random evolution of the quantum system from an initially pure state into a statistical mixture-a process known as decoherence. However, by accurately measuring the environment in real time, the quantum system can be maintained in a pure state and its time evolution described by a quantum trajectory conditioned on the measurement outcome. We employ weak measurements to monitor a microwave cavity embedding a superconducting qubit and track the individual quantum trajectories of the system. In this architecture, the environment is dominated by the fluctuations of a single electromagnetic mode of the cavity. Using a near-quantum-limited parametric amplifier, we selectively measure e...

  17. Electrically addressing a single self-assembled quantum dot

    CERN Document Server

    Ellis, D J P; Atkinson, P; Ritchie, D A; Shields, A J

    2006-01-01

    We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot.

  18. Single-photon-level quantum memory at room temperature

    CERN Document Server

    Reim, K F; Lee, K C; Nunn, J; Langford, N K; Walmsley, I A

    2010-01-01

    Quantum memories capable of storing single photons are essential building blocks for quantum information processing, enabling the storage and transfer of quantum information over long distances. Devices operating at room temperature can be deployed on a large scale and integrated into existing photonic networks, but so far warm quantum memories have been susceptible to noise at the single photon level. This problem is circumvented in cold atomic ensembles, but these are bulky and technically complex. Here we demonstrate controllable, broadband and efficient storage and retrieval of weak coherent light pulses at the single-photon level in warm atomic caesium vapour using the far off-resonant Raman memory scheme. The unconditional noise floor is found to be low enough to operate the memory in the quantum regime at room temperature.

  19. Quantum dots with single-atom precision.

    Science.gov (United States)

    Fölsch, Stefan; Martínez-Blanco, Jesús; Yang, Jianshu; Kanisawa, Kiyoshi; Erwin, Steven C

    2014-07-01

    Quantum dots are often called artificial atoms because, like real atoms, they confine electrons to quantized states with discrete energies. However, although real atoms are identical, most quantum dots comprise hundreds or thousands of atoms, with inevitable variations in size and shape and, consequently, unavoidable variability in their wavefunctions and energies. Electrostatic gates can be used to mitigate these variations by adjusting the electron energy levels, but the more ambitious goal of creating quantum dots with intrinsically digital fidelity by eliminating statistical variations in their size, shape and arrangement remains elusive. We used a scanning tunnelling microscope to create quantum dots with identical, deterministic sizes. By using the lattice of a reconstructed semiconductor surface to fix the position of each atom, we controlled the shape and location of the dots with effectively zero error. This allowed us to construct quantum dot molecules whose coupling has no intrinsic variation but could nonetheless be tuned with arbitrary precision over a wide range. Digital fidelity opens the door to quantum dot architectures free of intrinsic broadening-an important goal for technologies from nanophotonics to quantum information processing as well as for fundamental studies of confined electrons.

  20. Coupling of single quantum dots to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian

    . An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...

  1. Coupling of single quantum dots to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian;

    . An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...

  2. Crystallographically uniform arrays of ordered (In)GaN nanocolumns

    Energy Technology Data Exchange (ETDEWEB)

    Gačević, Ž., E-mail: gacevic@isom.upm.es; Bengoechea-Encabo, A.; Albert, S.; Calleja, E. [ETSIT-ISOM, Universidad Politécnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Torres-Pardo, A.; González-Calbet, J. M. [Dept. Química Inorgánica, Universidad Complutense, 28040 Madrid (Spain); CEI Campus Moncloa, UCM-UPM, Madrid (Spain)

    2015-01-21

    In this work, through a comparative study of self-assembled (SA) and selective area grown (SAG) (In)GaN nanocolumn (NC) ensembles, we first give a detailed insight into improved crystallographic uniformity (homogeneity of crystallographic tilts and twists) of the latter ones. The study, performed making use of: reflective high energy electron diffraction, X-ray diffraction and scanning electron microscopy, reveals that unlike their SA counterparts, the ensembles of SAG NCs show single epitaxial relationship to both sapphire(0001) and Si(111) underlying substrates. In the second part of the article, making use of X-ray diffraction, we directly show that the selective area growth leads to improved compositional uniformity of InGaN NC ensembles. This further leads to improved spectral purity of their luminescence, as confirmed by comparative macro-photoluminescence measurements performed on SA and SAG InGaN NC ensembles. An improved crystallographic uniformity of NC ensembles facilitates their integration into optoelectronic devices, whereas their improved compositional uniformity allows for their employment in single-color optoelectronic applications.

  3. Crystallographically uniform arrays of ordered (In)GaN nanocolumns

    Science.gov (United States)

    Gačević, Ž.; Bengoechea-Encabo, A.; Albert, S.; Torres-Pardo, A.; González-Calbet, J. M.; Calleja, E.

    2015-01-01

    In this work, through a comparative study of self-assembled (SA) and selective area grown (SAG) (In)GaN nanocolumn (NC) ensembles, we first give a detailed insight into improved crystallographic uniformity (homogeneity of crystallographic tilts and twists) of the latter ones. The study, performed making use of: reflective high energy electron diffraction, X-ray diffraction and scanning electron microscopy, reveals that unlike their SA counterparts, the ensembles of SAG NCs show single epitaxial relationship to both sapphire(0001) and Si(111) underlying substrates. In the second part of the article, making use of X-ray diffraction, we directly show that the selective area growth leads to improved compositional uniformity of InGaN NC ensembles. This further leads to improved spectral purity of their luminescence, as confirmed by comparative macro-photoluminescence measurements performed on SA and SAG InGaN NC ensembles. An improved crystallographic uniformity of NC ensembles facilitates their integration into optoelectronic devices, whereas their improved compositional uniformity allows for their employment in single-color optoelectronic applications.

  4. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xiaoming; Liu, Junlin, E-mail: liujunlin@ncu.edu.cn; Jiang, Fengyi [National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047 (China)

    2015-10-28

    The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.

  5. InGaN multiple-quantum-well epifilms on GaN-sillicon substrates for microcavities and surface-emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, June Key [Chonnam National University, Gwangju (Korea, Republic of); Cho, Hoon; Kim, Bok Hee; Park, Si Hyun [Chosun University, Gwangju (Korea, Republic of); Gu, Erdan; Watson, Ian; Dawson, Martin [University of Strathclyde, Wolfson Centre, Glasgow (United Kingdom)

    2006-07-15

    We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflector (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

  6. Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Nippert, Felix, E-mail: felix@physik.tu-berlin.de; Callsen, Gordon; Westerkamp, Steffen; Kure, Thomas; Nenstiel, Christian; Hoffmann, Axel [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin (Germany); Nirschl, Anna; Pietzonka, Ines; Strassburg, Martin [OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg (Germany); Schulz, Tobias; Albrecht, Martin [Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin (Germany)

    2016-06-07

    We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage.

  7. A Single-Photon Subtractor for Multimode Quantum States

    Science.gov (United States)

    Ra, Young-Sik; Jacquard, Clément; Averchenko, Valentin; Roslund, Jonathan; Cai, Yin; Dufour, Adrien; Fabre, Claude; Treps, Nicolas

    2016-05-01

    In the last decade, single-photon subtraction has proved to be key operations in optical quantum information processing and quantum state engineering. Implementation of the photon subtraction has been based on linear optics and single-photon detection on single-mode resources. This technique, however, becomes unsuitable with multimode resources such as spectrally multimode squeezed states or continuous variables cluster states. We implement a single-photon subtractor for such multimode resources based on sum-frequency generation and single-photon detection. An input multimode quantum state interacts with a bright control beam whose spectrum has been engineered through ultrafast pulse-shaping. The multimode quantum state resulting from the single-photon subtractor is analyzed with multimode homodyne detection whose local oscillator spectrum is independently engineered. We characterize the single-photon subtractor via coherent-state quantum process tomography, which provides its mode-selectivity and subtraction modes. The ability to simultaneously control the state engineering and its detection ensures both flexibility and scalability in the production of highly entangled non-Gaussian quantum states.

  8. Non-Markovian spontaneous emission from a single quantum dot

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke;

    2011-01-01

    We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system....

  9. Characterizing quantum phase transitions by single qubit operations

    CERN Document Server

    Giampaolo, S M; De Siena, S

    2006-01-01

    We introduce observable quantities, borrowing from concepts of quantum information theory, for the characterization of quantum phase transitions in spin systems. These observables are uniquely defined in terms of single spin unitary operations. We define the energy gap between the ground state and the state produced by the action of a single-qubit local gate. We show that this static quantity involves only single-site expectations and two-point correlation functions on the ground state. We then discuss a dynamical local observable defined as the acceleration of quantum state evolution after performing an instaneous single-qubit perturbation on the ground state. This quantity involves three-point correlations as well. We show that both the static and the dynamical observables detect and characterize completely quantum critical points in a class of spin systems.

  10. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...... developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...

  11. Optical levitation of a microdroplet containing a single quantum dot.

    Science.gov (United States)

    Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

    2015-03-15

    We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This Letter presents the realization of an optically levitated solid-state quantum emitter.

  12. Improved thermal stability and narrowed line width of photoluminescence from InGaN nanorod by ytterbium doping

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jingzhou; Wright, Jason; Kaya, S.; Jadwisienczak, W.M. [School of Electrical Engineering and Computer Science, Ohio University, Stocker Center, Athens OH 45701 (United States); Dasari, Kiran; Palai, Ratnakar [Department of Physics, University of Puerto Rico, San Juan, PR 00936 (United States); Cooper, Kevin; Thota, Venkata R.; Ingram, David C.; Stinaff, Eric A. [Department of Physics and Astronomy, Ohio University, Athens, OH 45701 (United States)

    2015-03-18

    Nanorod of in situ Yb-doped InGaN and undoped InGaN have been grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). Selected regions on Yb-doped InGaN sample show single dominant near band edge emission (NBE) in green, yellow or orange color due to the variation of In content. Temperature dependent PL peak energy of InGaN nanorod shows the characteristic S -shaped behavior indicating the presents of strong exciton localization energy in undoped InGaN nanorod. The exciton localization energy reduced significantly after incorporating Yb into InGaN, giving rise to damping of the S-shape profile amplitude and narrowing of the PL line width from ∝20 meV to ∝12 meV at 11 K. It is proposed that the improved PL thermal stability and the PL line width in Yb-doped InGaN nanorod is affected by the Yb gettering effect. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model

    Science.gov (United States)

    Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Lu, Zhijian; Ding, Ding; Zhao, Yuji

    2016-06-01

    InGaN semiconductors are promising candidates for high-efficiency next-generation thin film solar cells. In this work, we study the photovoltaic performance of single-junction and two-junction InGaN solar cells using a semi-analytical model. We analyze the major loss mechanisms in InGaN solar cell including transmission loss, thermalization loss, spatial relaxation loss, and recombination loss. We find that transmission loss plays a major role for InGaN solar cells due to the large bandgaps of III-nitride materials. Among the recombination losses, Shockley-Read-Hall recombination loss is the dominant process. Compared to other III-V photovoltaic materials, we discovered that the emittance of InGaN solar cells is strongly impacted by Urbach tail energy. For two- and multi-junction InGaN solar cells, we discover that the current matching condition results in a limited range of top-junction bandgaps. This theoretical work provides detailed guidance for the design of high-performance InGaN solar cells.

  14. Optimal control of single flux quantum (SFQ) pulse sequences

    Science.gov (United States)

    Liebermann, Per; Wilhelm, Frank

    Single flux quantum (SFQ) pulses are a natural candidate for on-chip control of superconducting qubits. High accuracy quantum gates are accessible with quantum optimal control methods. We apply trains of SFQ pulses to operate single qubit gates, under the constraint of fixed amplitude and duration of each pulse. Timing of the control pulses is optimized using genetic algorithms and simulated annealing, decreasing the average fidelity errorby several orders of magnitude. Furthermore we are able to reduce the gate time to the quantum speed limit. Leakage out of the qubit subspace as well as timing errors of the pulses are considered, exploring the robustness of our optimized sequence.This takes usone step further to a scalable quantum processor

  15. Single-Photon Superradiance from a Quantum Dot

    Science.gov (United States)

    Tighineanu, Petru; Daveau, Raphaël S.; Lehmann, Tau B.; Beere, Harvey E.; Ritchie, David A.; Lodahl, Peter; Stobbe, Søren

    2016-04-01

    We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a fivefold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies.

  16. Quantum dot spectroscopy using a single phosphorus donor

    Science.gov (United States)

    Büch, Holger; Fuechsle, Martin; Baker, William; House, Matthew G.; Simmons, Michelle Y.

    2015-12-01

    Using a deterministic single P donor placed with atomic precision accuracy next to a nanoscale silicon quantum dot, we present a way to analyze the energy spectrum of small quantum dots in silicon by tunnel-coupled transport measurements. The energy-level structure of the quantum dot is observed as resonance features within the transport bias triangles when the donor chemical potential is aligned with states within the quantum dot as confirmed by a numeric rate equation solver SIMON. This technique allows us to independently extract the quantum dot level structure irrespective of the density of states in the leads. Such a method is useful for the investigation of silicon quantum dots in the few-electron regime where the level structure is governed by an intricate interplay between the spin- and the valley-orbit degrees of freedom.

  17. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... is obtained by exciting and detecting the photoluminescence through a microscope objective which is located inside the cryostat. Furthermore, e-beam lithography and mesa etching have been used to reduce the size of the detection area to a few hundred nanometers in diameter. These techniques allow us...

  18. Temperature Studies of Single InP Quantum Dots

    Science.gov (United States)

    1999-06-18

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP012858 TITLE: Temperature Studies of Single InP Quantum Dots DISTRIBUTION...34 QWR/QD.07 St Petersburg, Russia, June 14-18, 1999 © 1999 loffe Institute Temperature studies of single InP quantum dots Valdry Zwiller, Mats-Erik...Information on the size and geometry of our self-assembled InP Quantum Dots grown on GamnP lattice matched to GaAs has been published elsewhere -I

  19. Quantum Logic with Cavity Photons From Single Atoms

    Science.gov (United States)

    Holleczek, Annemarie; Barter, Oliver; Rubenok, Allison; Dilley, Jerome; Nisbet-Jones, Peter B. R.; Langfahl-Klabes, Gunnar; Marshall, Graham D.; Sparrow, Chris; O'Brien, Jeremy L.; Poulios, Konstantinos; Kuhn, Axel; Matthews, Jonathan C. F.

    2016-07-01

    We demonstrate quantum logic using narrow linewidth photons that are produced with an a priori nonprobabilistic scheme from a single 87Rb atom strongly coupled to a high-finesse cavity. We use a controlled-not gate integrated into a photonic chip to entangle these photons, and we observe nonclassical correlations between photon detection events separated by periods exceeding the travel time across the chip by 3 orders of magnitude. This enables quantum technology that will use the properties of both narrow-band single photon sources and integrated quantum photonics.

  20. Operating single quantum emitters with a compact Stirling cryocooler

    Energy Technology Data Exchange (ETDEWEB)

    Schlehahn, A.; Krüger, L.; Gschrey, M.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin (Germany)

    2015-01-15

    The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g{sup (2)}(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g{sup (2)}(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

  1. Operating single quantum emitters with a compact Stirling cryocooler.

    Science.gov (United States)

    Schlehahn, A; Krüger, L; Gschrey, M; Schulze, J-H; Rodt, S; Strittmatter, A; Heindel, T; Reitzenstein, S

    2015-01-01

    The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g((2))(0) Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g((2))(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

  2. Operating single quantum emitters with a compact Stirling cryocooler

    Science.gov (United States)

    Schlehahn, A.; Krüger, L.; Gschrey, M.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T.; Reitzenstein, S.

    2015-01-01

    The development of an easy-to-operate light source emitting single photons has become a major driving force in the emerging field of quantum information technology. Here, we report on the application of a compact and user-friendly Stirling cryocooler in the field of nanophotonics. The Stirling cryocooler is used to operate a single quantum emitter constituted of a semiconductor quantum dot (QD) at a base temperature below 30 K. Proper vibration decoupling of the cryocooler and its surrounding enables free-space micro-photoluminescence spectroscopy to identify and analyze different charge-carrier states within a single quantum dot. As an exemplary application in quantum optics, we perform a Hanbury-Brown and Twiss experiment demonstrating a strong suppression of multi-photon emission events with g(2)(0) < 0.04 from this Stirling-cooled single quantum emitter under continuous wave excitation. Comparative experiments performed on the same quantum dot in a liquid helium (LHe)-flow cryostat show almost identical values of g(2)(0) for both configurations at a given temperature. The results of this proof of principle experiment demonstrate that low-vibration Stirling cryocoolers that have so far been considered exotic to the field of nanophotonics are an attractive alternative to expensive closed-cycle cryostats or LHe-flow cryostats, which could pave the way for the development of high-quality table-top non-classical light sources.

  3. Quantum Privacy Amplification for a Sequence of Single Qubits

    Institute of Scientific and Technical Information of China (English)

    DENG Fu-Guo; LONG Gui-Lu

    2006-01-01

    We present a scheme for quantum privacy amplification (QPA) for a sequence of single qubits. The QPA procedure uses a unitary operation with two controlled-not gates and a Hadamard gate. Every two qubits are performed with the unitary gate operation, and a measurement is made on one photon and the other one is retained.The retained qubit carries the state information of the discarded one. In this way, the information leakage is reduced.The procedure can be performed repeatedly so that the information leakage is reduced to any arbitrarily low level. With this QPA scheme, the quantum secure direct communication with single qubits can be implemented with arbitrarily high security. We also exploit this scheme to do privacy amplification on the single qubits in quantum information sharing for long-distance communication with quantum repeaters.

  4. Linear optical quantum computing in a single spatial mode.

    Science.gov (United States)

    Humphreys, Peter C; Metcalf, Benjamin J; Spring, Justin B; Moore, Merritt; Jin, Xian-Min; Barbieri, Marco; Kolthammer, W Steven; Walmsley, Ian A

    2013-10-11

    We present a scheme for linear optical quantum computing using time-bin-encoded qubits in a single spatial mode. We show methods for single-qubit operations and heralded controlled-phase (cphase) gates, providing a sufficient set of operations for universal quantum computing with the Knill-Laflamme-Milburn [Nature (London) 409, 46 (2001)] scheme. Our protocol is suited to currently available photonic devices and ideally allows arbitrary numbers of qubits to be encoded in the same spatial mode, demonstrating the potential for time-frequency modes to dramatically increase the quantum information capacity of fixed spatial resources. As a test of our scheme, we demonstrate the first entirely single spatial mode implementation of a two-qubit quantum gate and show its operation with an average fidelity of 0.84±0.07.

  5. Photon Statistics of Single-Photon Quantum States in Real Single Photon Detection

    Institute of Scientific and Technical Information of China (English)

    李刚; 李园; 王军民; 彭堃墀; 张天才

    2004-01-01

    @@ Single photon detection (SPD) with high quantum efficiency has been widely used for measurement of different quantum states with different photon distributions.Based on the direct single SPD and double-SPD of HBT configuration, we discuss the effect of a real SPD on the photon statistics measurement and it shows that the measured photon distributions for different quantum states are corrected in different forms.The results are confirmed by experiment with the strongly attenuated coherent light and thermal light.This system can be used to characterize the photon statistics of the fluorescence light from single atom or single molecular.

  6. Investigation of new approaches for InGaN growth with high indium content for CPV application

    Energy Technology Data Exchange (ETDEWEB)

    Arif, Muhammad; Salvestrini, Jean Paul, E-mail: salvestr@metz.supelec.fr [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Université de Lorraine & CentraleSupelec, LMOPS, EA4423, 57070 Metz (France); Sundaram, Suresh; Streque, Jérémy; Gmili, Youssef El [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, Renaud; Voss, Paul L. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Belahsene, Sofiane; Ramdane, Abderahim; Martinez, Anthony; Patriarche, Gilles [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Fix, Thomas; Slaoui, Abdelillah [CNRS, ICUBE - Université de Strasbourg (France); Ougazzaden, Abdallah [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France)

    2015-09-28

    We propose to use two new approaches that may overcome the issues of phase separation and high dislocation density in InGaN-based PIN solar cells. The first approach consists in the growth of a thick multi-layered InGaN/GaN absorber. The periodical insertion of the thin GaN interlayers should absorb the In excess and relieve compressive strain. The InGaN layers need to be thin enough to remain fully strained and without phase separation. The second approach consists in the growth of InGaN nano-structures for the achievement of high In content thick InGaN layers. It allows the elimination of the preexisting dislocations in the underlying template. It also allows strain relaxation of InGaN layers without any dislocations, leading to higher In incorporation and reduced piezo-electric effect. The two approaches lead to structural, morphological, and luminescence properties that are significantly improved when compared to those of thick InGaN layers. Corresponding full PIN structures have been realized by growing a p-type GaN layer on the top the half PIN structures. External quantum efficiency, electro-luminescence, and photo-current characterizations have been carried out on the different structures and reveal an enhancement of the performances of the InGaN PIN PV cells when the thick InGaN layer is replaced by either InGaN/GaN multi-layered or InGaN nanorod layer.

  7. Investigation of new approaches for InGaN growth with high indium content for CPV application

    Science.gov (United States)

    Arif, Muhammad; Sundaram, Suresh; Streque, Jérémy; Gmili, Youssef El; Puybaret, Renaud; Belahsene, Sofiane; Ramdane, Abderahim; Martinez, Anthony; Patriarche, Gilles; Fix, Thomas; Slaoui, Abdelillah; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, Abdallah

    2015-09-01

    We propose to use two new approaches that may overcome the issues of phase separation and high dislocation density in InGaN-based PIN solar cells. The first approach consists in the growth of a thick multi-layered InGaN/GaN absorber. The periodical insertion of the thin GaN interlayers should absorb the In excess and relieve compressive strain. The InGaN layers need to be thin enough to remain fully strained and without phase separation. The second approach consists in the growth of InGaN nano-structures for the achievement of high In content thick InGaN layers. It allows the elimination of the preexisting dislocations in the underlying template. It also allows strain relaxation of InGaN layers without any dislocations, leading to higher In incorporation and reduced piezo-electric effect. The two approaches lead to structural, morphological, and luminescence properties that are significantly improved when compared to those of thick InGaN layers. Corresponding full PIN structures have been realized by growing a p-type GaN layer on the top the half PIN structures. External quantum efficiency, electro-luminescence, and photo-current characterizations have been carried out on the different structures and reveal an enhancement of the performances of the InGaN PIN PV cells when the thick InGaN layer is replaced by either InGaN/GaN multi-layered or InGaN nanorod layer.

  8. Quantum Overloading Cryptography Using Single-Photon Nonlocality

    Institute of Scientific and Technical Information of China (English)

    TAN Yong-Gang; CAI Qing-Yu; SHI Ting-Yun

    2007-01-01

    @@ Using the single-photon nonlocality, we propose a quantum novel overloading cryptography scheme, in which a single photon carries two bits information in one-way quantum channel. Two commutative modes of the single photon, the polarization mode and the spatial mode, are used to encode secret information. Strict time windows are set to detect the impersonation attack. The spatial mode which denotes the existence of photons is noncommutative with the phase of the photon, so that our scheme is secure against photon-number-splitting attack. Our protocol may be secure against individual attack.

  9. Secure quantum dialogue based on single-photon

    Institute of Scientific and Technical Information of China (English)

    Ji Xin; Zhang Shou

    2006-01-01

    In this paper a quantum dialogue scheme is proposed by using N batches of single photons. The same secret message is encoded on each batch of single photons by the sender with two different unitary operations, and then the N batches of single photons are sent to the receiver. After eavesdropping check, the message is encoded on the one remaining batch by the receiver. It is shown that the intercept-and-resend attack and coupling auxiliary modes attack can be resisted more efficiently, because the photons are sent only once in our quantum dialogue scheme.

  10. State-independent quantum contextuality with single photons

    CERN Document Server

    Amselem, Elias; Bourennane, Mohamed; Cabello, Adan

    2009-01-01

    Bell's theorem states that quantum predictions cannot be reproduced with hidden variable theories satisfying locality. The Kochen-Specker theorem states that quantum mechanics cannot be reproduced with non-contextual hidden variables. The result of a measurement is non-contextual when it is not affected by other compatible measurements being carried out on the same individual system. While Bell's theorem applies only to entangled states of composite systems, a distinguishing feature of the Kochen-Specker theorem is that it is valid for any quantum state, entangled or not, of any system, even for single systems. We present the first experimental state-independent violation of an inequality for non-contextual theories on single particles in the spirit of the original Kochen-Specker theorem. The tested inequality involves correlations between results of sequential compatible measurements on single photons. We show that 20 different single-photon states, ranging from states with maximal internal entanglement to m...

  11. Exponential speed-up with a single bit of quantum information: Testing the quantum butterfly effect

    CERN Document Server

    Poulin, D; Laflamme, R; Ollivier, H; Poulin, David; Blume-Kohout, Robin; Laflamme, Raymond; Ollivier, Harold

    2003-01-01

    We present an efficient quantum algorithm to measure the average fidelity decay of a quantum map under perturbation using a single bit of quantum information. Our algorithm scales only as the complexity of the map under investigation, so for those maps admitting an efficient gate decomposition, it provides an exponential speed up over known classical procedures. Fidelity decay is important in the study of complex dynamical systems, where it is conjectured to be a signature of quantum chaos. Our result also illustrates the role of chaos in the process of decoherence.

  12. Quantum optical circulator controlled by a single chirally coupled atom

    Science.gov (United States)

    Scheucher, Michael; Hilico, Adèle; Will, Elisa; Volz, Jürgen; Rauschenbeutel, Arno

    2016-12-01

    Integrated nonreciprocal optical components, which have an inherent asymmetry between their forward and backward propagation direction, are key for routing signals in photonic circuits. Here, we demonstrate a fiber-integrated quantum optical circulator operated by a single atom. Its nonreciprocal behavior arises from the chiral interaction between the atom and the transversally confined light. We demonstrate that the internal quantum state of the atom controls the operation direction of the circulator and that it features a strongly nonlinear response at the single-photon level. This enables, for example, photon number–dependent routing and novel quantum simulation protocols. Furthermore, such a circulator can in principle be prepared in a coherent superposition of its operational states and may become a key element for quantum information processing in scalable integrated optical circuits.

  13. Continuum and discrete excitation spectrum of single quantum rings

    OpenAIRE

    2005-01-01

    Photoluminescence and excitation of the photoluminescence spectroscopy has been performed in single InGaAs self-assembled quantum rings embedded in a field effect structure device. To determine their electronic structure, bias-dependent optical transitions have been analyzed both, for individual quantum rings, and for the averaged ensemble. Our results are compared with a theoretical model, and also with results reported by other authors studying similar nanostructures.

  14. Singly and Doubly Occupied Higher Quantum States in Nanocrystals.

    Science.gov (United States)

    Jeong, Juyeon; Yoon, Bitna; Kwon, Young-Wan; Choi, Dongsun; Jeong, Kwang Seob

    2017-02-08

    Filling the lowest quantum state of the conduction band of colloidal nanocrystals with a single electron, which is analogous to the filling the lowest unoccupied molecular orbital in a molecule with a single electron, has attracted much attention due to the possibility of harnessing the electron spin for potential spin-based applications. The quantized energy levels of the artificial atom, in principle, make it possible for a nanocrystal to be filled with an electron if the Fermi-energy level is optimally tuned during the nanocrystal growth. Here, we report the singly occupied quantum state (SOQS) and doubly occupied quantum state (DOQS) of a colloidal nanocrystal in steady state under ambient conditions. The number of electrons occupying the lowest quantum state can be controlled to be zero, one (unpaired), and two (paired) depending on the nanocrystal growth time via changing the stoichiometry of the nanocrystal. Electron paramagnetic resonance spectroscopy proved the nanocrystals with single electron to show superparamagnetic behavior, which is a direct evidence of the SOQS, whereas the DOQS of the two- or zero-electron occupied nanocrystals in the 1Se exhibit diamagnetic behavior. In combination with the superconducting quantum interference device measurement, it turns out that the SOQS of the HgSe colloidal quantum dots has superparamagnetic property. The appearance and change of the steady-state mid-IR intraband absorption spectrum reflect the sequential occupation of the 1Se state with electrons. The magnetic property of the colloidal quantum dot, initially determined by the chemical synthesis, can be tuned from diamagnetic to superparamagnetic and vice versa by varying the number of electrons through postchemical treatment. The switchable magnetic property will be very useful for further applications such as colloidal nanocrystal based spintronics, nonvolatile memory, infrared optoelectronics, catalyst, imaging, and quantum computing.

  15. Adiabatic holonomic quantum gates for a single qubit

    Science.gov (United States)

    Malinovsky, Vladimir S.; Rudin, Sergey

    2014-04-01

    A universal set of single qubit holonomic quantum gates using the geometric phase that the qubit wave function acquires after a cyclic evolution is discussed. The proposed scheme utilizes ultrafast linearly chirped pulses and provides a possibility to substantially suppress transient population of the ancillary state in a generic three-level system. That provides a possibility to reduce the decoherence effect and achieve a higher fidelity of the quantum gates.

  16. Quantum interferences of a single quantum dot in the case of detuning

    Energy Technology Data Exchange (ETDEWEB)

    Michaelis de Vasconcellos, Steffen; Stufler, Stefan; Wegner, Sven-Ake; Ester, Patrick; Zrenner, Artur [Universitaet Paderborn, Warburger Strasse 100, 33098 Paderborn (Germany); Bichler, Max [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, 85748 Garching (Germany)

    2006-07-01

    We report on highly phase sensitive measurements with a slightly detuned excitation of a quantum mechanical two-level system. It is formed by the single exciton ground state of a single quantum dot, which is incorporated in a n-i-Schottky diode. We excited the two-level system by two partly overlapping laser pulses with variable phase shift. To investigate the properties of the quantum system we determine its occupancy by measuring the photocurrent. The experimental data is compared to a numerical simulation of the system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Material characteristics of self-assembled mushroom-like InGaN nanocolumns

    Science.gov (United States)

    Chen, Q. M.; Yan, C. L.; Qu, Y.

    2016-11-01

    The material characteristics of self-assembled mushroom-like N-polar InGaN/GaN nanowire heterostructure have been clarified, which were achieved by different In content self-assembled InGaN nanocolumns grown on self-assembled GaN nanocolumns template on (111)-silicon-substrate under N-rich condition by plasma-assist molecular beam epitaxy (PA-MBE). The In component of the InGaN nanocolumns was determined by XRD (2θ-ω scans). SEM has been used to study the morphology which demonstrated that the diameter of the nanocolumns became larger with higher In content. The structural properties of the individual InGaN nanocolumn were further analyzed by HAADF image, EDX and TEM. The high-In-content (85%) single mushroom-like InGaN nanocolumn showed some cracks on the sidewall, however the GaN nanocolumns showed dislocation free. The (0002) facet of the nanocolumn show very clearly hexagonal structure. It is quite clear that the formation of the mushroom-like InGaN nanocolumns comes from that the lateral epitaxy is dominating with the high In content embedded.

  18. Unidirectional Emission of a Site-Controlled Single Quantum Dot from a Pyramidal Structure.

    Science.gov (United States)

    Kim, Sejeong; Gong, Su-Hyun; Cho, Jong-Hoi; Cho, Yong-Hoon

    2016-10-12

    Emission control of a quantum emitter made of semiconductor materials is of significance in various optical applications. Specifically, the realization of efficient quantum emitters is important because typical semiconductor quantum dots are associated with low extraction efficiency levels due to their high refractive index contrast. Here, we report bright and unidirectional emission from a site-controlled InGaN quantum dot formed on the apex of a silver-coated GaN nanopyramidal structure. We show that the majority of the extracted light from the quantum dot is guided toward the bottom of the pyramid with high directionality. We also demonstrate that nanopyramid structures can be detached from a substrate, thus demonstrating great potential of this structure in various applications. To clarify the directional radiation, the far-field radiation pattern is measured using Fourier microscopy. This scheme will pave the way toward the realization of a bright and unidirectional quantum emitter along with easy fabrication and large-area reproducibility.

  19. Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin

    Science.gov (United States)

    He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

    2017-08-01

    Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

  20. Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin.

    Science.gov (United States)

    He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

    2017-08-11

    Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796±0.020. Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

  1. Coupling single emitters to quantum plasmonic circuits

    DEFF Research Database (Denmark)

    Huck, Alexander; Andersen, Ulrik Lund

    2016-01-01

    In recent years, the controlled coupling of single-photon emitters to propagating surface plasmons has been intensely studied, which is fueled by the prospect of a giant photonic nonlinearity on a nanoscaled platform. In this article, we will review the recent progress on coupling single emitters...

  2. A novel high-efficiency single-mode quantum dot single photon source

    DEFF Research Database (Denmark)

    Gerard, J.M.; Gregersen, Niels; Nielsen, Torben Roland

    2008-01-01

    We present a novel single-mode single photon source exploiting the emission of a semiconductor quantum dot (QD) located inside a photonic wire. Besides an excellent coupling (>95%) of QD spontaneous emission to the fundamental guided mode [1], we show that a single photon collection efficiency...

  3. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.

    Science.gov (United States)

    Radulaski, Marina; Widmann, Matthias; Niethammer, Matthias; Zhang, Jingyuan Linda; Lee, Sang-Yun; Rendler, Torsten; Lagoudakis, Konstantinos G; Son, Nguyen Tien; Janzén, Erik; Ohshima, Takeshi; Wrachtrup, Jörg; Vučković, Jelena

    2017-02-24

    Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

  4. Single-Atom Gating of Quantum State Superpositions

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Christopher

    2010-04-28

    The ultimate miniaturization of electronic devices will likely require local and coherent control of single electronic wavefunctions. Wavefunctions exist within both physical real space and an abstract state space with a simple geometric interpretation: this state space - or Hilbert space - is spanned by mutually orthogonal state vectors corresponding to the quantized degrees of freedom of the real-space system. Measurement of superpositions is akin to accessing the direction of a vector in Hilbert space, determining an angle of rotation equivalent to quantum phase. Here we show that an individual atom inside a designed quantum corral1 can control this angle, producing arbitrary coherent superpositions of spatial quantum states. Using scanning tunnelling microscopy and nanostructures assembled atom-by-atom we demonstrate how single spins and quantum mirages can be harnessed to image the superposition of two electronic states. We also present a straightforward method to determine the atom path enacting phase rotations between any desired state vectors. A single atom thus becomes a real-space handle for an abstract Hilbert space, providing a simple technique for coherent quantum state manipulation at the spatial limit of condensed matter.

  5. Bosonic lasing and trapping of a dressed photon fluid in InGaN at room temperature

    Science.gov (United States)

    Cobet, Munise

    2016-08-01

    The generation of a quantum fluid of dressed photons at room temperature is experimentally demonstrated in an InGaN microcavity which is divided into two- and one-dimensional sections, resulting in single- and switchable multilevel coherent light emission. Ultra-low-threshold operation is attributed to the slight but robust excitonic fraction of the photonic condensate representing a bosonic laser working below the Mott transition (polariton laser). In contrast to equilibrium Bose-Einstein condensates, the nonequilibrium driven-dissipative nature enables the population of higher orbitals if any confinement potential is present to induce enhanced quantum correlations. Trapping inside microwire spacers leads to a polariton harmonic oscillator resulting in discrete states in an equidistant ladder of photonic orbitals. Level occupation and selection of a specific wave function is managed via optical control, mimicking a quantum emitter on a macroscopic level. It shows that exotic states of matter can be realized in rather simple structures at room temperature directly visible to the human eye. It represents also an excellent opportunity to study basic many-body dynamics in one-dimensional bosonic matter by simultaneously settling an optimized fabrication technique for devices enabling practical Boolean quantum logic gates for optical computing.

  6. Pilot-Wave Quantum Theory with a Single Bohm's Trajectory

    Science.gov (United States)

    Avanzini, Francesco; Fresch, Barbara; Moro, Giorgio J.

    2016-05-01

    The representation of a quantum system as the spatial configuration of its constituents evolving in time as a trajectory under the action of the wave-function, is the main objective of the de Broglie-Bohm theory (or pilot wave theory). However, its standard formulation is referred to the statistical ensemble of its possible trajectories. The statistical ensemble is introduced in order to establish the exact correspondence (the Born's rule) between the probability density on the spatial configurations and the quantum distribution, that is the squared modulus of the wave-function. In this work we explore the possibility of using the pilot wave theory at the level of a single Bohm's trajectory, that is a single realization of the time dependent configuration which should be representative of a single realization of the quantum system. The pilot wave theory allows a formally self-consistent representation of quantum systems as a single Bohm's trajectory, but in this case there is no room for the Born's rule at least in its standard form. We will show that a correspondence exists between the statistical distribution of configurations along the single Bohm's trajectory and the quantum distribution for a subsystem interacting with the environment in a multicomponent system. To this aim, we present the numerical results of the single Bohm's trajectory description of the model system of six confined planar rotors with random interactions. We find a rather close correspondence between the coordinate distribution of one rotor, the others representing the environment, along its trajectory and the time averaged marginal quantum distribution for the same rotor. This might be considered as the counterpart of the standard Born's rule when the pilot wave theory is applied at the level of single Bohm's trajectory. Furthermore a strongly fluctuating behavior with a fast loss of correlation is found for the evolution of each rotor coordinate. This suggests that a Markov process might

  7. Authenticated Quantum Key Distribution with Collective Detection using Single Photons

    Science.gov (United States)

    Huang, Wei; Xu, Bing-Jie; Duan, Ji-Tong; Liu, Bin; Su, Qi; He, Yuan-Hang; Jia, Heng-Yue

    2016-10-01

    We present two authenticated quantum key distribution (AQKD) protocols by utilizing the idea of collective (eavesdropping) detection. One is a two-party AQKD protocol, the other is a multiparty AQKD protocol with star network topology. In these protocols, the classical channels need not be assumed to be authenticated and the single photons are used as the quantum information carriers. To achieve mutual identity authentication and establish a random key in each of the proposed protocols, only one participant should be capable of preparing and measuring single photons, and the main quantum ability that the rest of the participants should have is just performing certain unitary operations. Security analysis shows that these protocols are free from various kinds of attacks, especially the impersonation attack and the man-in-the-middle (MITM) attack.

  8. Coherence length of photons from a single quantum system

    Science.gov (United States)

    Jelezko, F.; Volkmer, A.; Popa, I.; Rebane, K. K.; Wrachtrup, J.

    2003-04-01

    We present a methodology that allows recording the coherence length of photons emitted by a single quantum system in a solid. The feasibility of this approach is experimentally demonstrated by measuring the self-interference of photons from the zero-phonon line emission of a single nitrogen-vacancy defect in diamond at 1.6 K. The first-order correlation function has been recorded and analyzed in terms of a single exponential decay time. A coherence time of ˜5 ps has been obtained, which is in good agreement with the corresponding spectral line width and demonstrates the feasibility of the Fourier-transform spectroscopy with single photons.

  9. A Single Molecule Investigation of the Photostability of Quantum Dots

    DEFF Research Database (Denmark)

    Christensen, Eva Arnspang; Kulatunga, Pasad; Lagerholm, B. Christoffer

    2012-01-01

    Quantum dots (QDs) are very attractive probes for multi-color fluorescence applications. We report here however that single QDs that are subject to continuous blue excitation from a 100W mercury arc lamp will undergo a continuous blue-switching of the emission wavelength eventually reaching...

  10. Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Borri, Paola; Hvam, Jørn Märcher;

    1998-01-01

    The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms...

  11. Superconducting single-photon detectors for integrated quantum optics

    Energy Technology Data Exchange (ETDEWEB)

    Kahl, Oliver

    2016-01-29

    This thesis reports on the implementation and characterization of a fully integrated single-photon detector. Several detector circuits are realized and it is shown that the detectors exhibit supreme detection performance over a wide optical spectrum. The detectors' scalability is showcased by the parallel operation of multiple detectors within a single integrated circuit. These demonstrations are essential for future developments in integrated quantum optics.

  12. Quasi-secure quantum dialogue using single photons

    Institute of Scientific and Technical Information of China (English)

    YANG; YuGuang; WEN; QiaoYan

    2007-01-01

    A quasi-secure quantum dialogue protocol using single photons was proposed. Different from the previous entanglement-based protocols, the present protocol uses batches of single photons which run back and forth between the two parties. A round run for each photon makes the two parties each obtain a classical bit of information. So the efficiency of information transmission can be increased. The present scheme is practical and well within the present-day technology.

  13. Photon pair source via two coupling single quantum emitters

    Institute of Scientific and Technical Information of China (English)

    彭勇刚; 郑雨军

    2015-01-01

    We study the two coupling two-level single molecules driven by an external field as a photon pair source. The proba-bility of emitting two photons, P2, is employed to describe the photon pair source quality in a short time, and the correlation coefficient RAB is employed to describe the photon pair source quality in a long time limit. The results demonstrate that the coupling single quantum emitters can be considered as a stable photon pair source.

  14. Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

    Energy Technology Data Exchange (ETDEWEB)

    Dahal, R.; Pantha, B. N.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2014-04-07

    InGaN alloys are very promising for solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. The demonstration of direct solar-to-fuel conversion without external bias with the sunlight being the only energy input would pave the way for realizing photoelectrochemical (PEC) production of hydrogen by using InGaN. A monolithic solar-PEC cell based on InGaN/GaN multiple quantum wells capable to directly generate hydrogen gas under zero bias via solar water splitting is reported. Under the irradiation by a simulated sunlight (1-sun with 100 mW/cm{sup 2}), a 1.5% solar-to-fuel conversion efficiency has been achieved under zero bias, setting a fresh benchmark of employing III-nitrides for artificial photosynthesis. Time dependent hydrogen gas production photocurrent measured over a prolonged period (measured for 7 days) revealed an excellent chemical stability of InGaN in aqueous solution of hydrobromic acid. The results provide insights into the architecture design of using InGaN for artificial photosynthesis to provide usable clean fuel (hydrogen gas) with the sunlight being the only energy input.

  15. Quantum dynamics of a single dislocation

    Science.gov (United States)

    de Gennes, Pierre-Gilles

    We discuss the zero temperature motions of an edge dislocation in a quantum solid (e.g., He4). If the dislocation has one kink (equal in length to its Burgers vector b) the kink has a creation energy U and can move along the line with a certain transfer integral t. When t and U are of comparable magnitude, two opposite kinks can form an extended bound state, with a size l. The overall shape of the dislocation in the ground state is then associated with a random walk of persistence length l (along the line) and hop sizes b. We also discuss the motions of kinks under an applied shear stress σ: the glide velocity is proportional to exp(-σ*/σ), where σ* is a characteristic stress, controlled by tunneling processes. Mouvements quantiques d'une dislocation. On analyse le mouvement à température nulle d'une dislocation coin dans un solide quantique (He4). La dislocation peut avoir un cran (d'énergie U) dans son plan de glissement. Le cran peut avancer ou reculer le long de la dislocation par effet tunnel, avec une certaine intégrale de transfert t. Deux crans de signe opposé peuvent former un état lié. En présence d'une contrainte extérieure σ, la ligne doit avancer avec une vitesse ~exp(-σ*/σ) où σ* est une contrainte seuil, contrôlée par l'effet tunnel.

  16. Simulating and Optimising Quantum Thermometry Using Single Photons

    Science.gov (United States)

    Tham, W. K.; Ferretti, H.; Sadashivan, A. V.; Steinberg, A. M.

    2016-12-01

    A classical thermometer typically works by exchanging energy with the system being measured until it comes to equilibrium, at which point the readout is related to the final energy state of the thermometer. A recent paper noted that with a quantum thermometer consisting of a single spin/qubit, temperature discrimination is better achieved at finite times rather than once equilibration is essentially complete. Furthermore, preparing a qubit thermometer in a state with quantum coherence instead of an incoherent one improves its sensitivity to temperature differences. Implementing a recent proposal for efficiently emulating an arbitrary quantum channel, we use the quantum polarisation state of individual photons as models of “single-qubit thermometers” which evolve for a certain time in contact with a thermal bath. We investigate the optimal thermometer states for temperature discrimination, and the optimal interaction times, confirming that there is a broad regime where quantum coherence provides a significant improvement. We also discuss the more practical question of thermometers composed of a finite number of spins/qubits (greater than one), and characterize the performance of an adaptive protocol for making optimal use of all the qubits.

  17. Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls

    Energy Technology Data Exchange (ETDEWEB)

    Mancini, L.; Lefebvre, W.; Houard, J.; Blum, I.; Vurpillot, F.; Rigutti, L., E-mail: lorenzo.rigutti@univ-rouen.fr [Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, INSA and University of Rouen, 76800 St Etienne du Rouvray (France); Hernández-Maldonado, D. [Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, INSA and University of Rouen, 76800 St Etienne du Rouvray (France); SuperSTEM STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Eymery, J.; Durand, C. [CEA, CNRS, Université Grenoble Alpes, 38000 Grenoble (France); Tchernycheva, M. [Institut d' Electronique Fondamentale, UMR CNRS 8622, University Paris Saclay, 91405 Orsay (France)

    2016-01-25

    The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and micro-photoluminescence study applied on single nanoscale field-emission tips obtained by a focused ion beam annular milling. Instead of assuming simple rectangular composition profiles, yielding misleading predictions for the optical transition energies, we can thus take into account actual compositional distributions and the presence of stacking faults (SFs). SFs were shown to be responsible for a lowering of the recombination energies of the order of 0.1 eV with respect to those expected for defect-free quantum wells (QWs). Such energy reduction allows establishing a good correspondence between the transition energies observed by optical spectroscopy and those calculated on the basis of the QWs In measured composition and distribution assessed by STEM structural analysis and APT chemical mapping.

  18. Linear Optical Quantum Computing in a Single Spatial Mode

    Science.gov (United States)

    Walmsley, Ian

    2014-05-01

    We present a scheme for linear optical quantum computing using time-bin encoded qubits in a single spatial mode. This scheme allows arbitrary numbers of qubits to be encoded in the same mode, circumventing the requirement for many spatial modes that challenges the scalability of other schemes, and exploiting the inherent stability and robustness of time-frequency optical modes. This approach leverages the architecture of modern telecommunications systems, and opens a door to very high dimensional Hilbert spaces while maintaining compact device designs. Further, temporal encodings benefit from intrinsic robustness to inhomogeneities in transmission mediums. These advantages have been recognized in works exploring the preparation of time-frequency entangled states both for tests of fundamental quantum phenomena, and for quantum communications technologies including key distribution and teleportation. Here we extend this idea to computation. In particular, we present methods for single-qubit operations and heralded controlled phase (CPhase) gates, providing a sufficient set of operations for universal quantum computing with the Knill-Laflamme-Milburn scheme. As a test of our scheme, we demonstrate the first entirely single spatial mode implementation of a two-qubit quantum gate and show its operation with an average fidelity of 0.84 /pm 0.07. An analysis of the performance of current technologies suggests that our scheme offers a promising route for the construction of quantum circuits beyond the few-qubit level. In addition, we foresee that our investigation may motivate further development of the approaches presented into a regime in which time bins are temporally overlapped and frequency based manipulations become necessary, opening up encodings of even higher densities. This work was supported by the Engineering and Physical Sciences Research Council (EP/H03031X/1), the European Commission project Q-ESSENCE (248095) and the Air Force Office of Scientific Research

  19. Single to quadruple quantum dots with tunable tunnel couplings

    Energy Technology Data Exchange (ETDEWEB)

    Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Otsuka, T.; Tarucha, S. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); RIKEN, Center for Emergent Matter Science, 3-1 Wako-shi, Saitama 351-0198 (Japan)

    2014-03-17

    We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.

  20. Economical quantum secure direct communication network with single photons

    Institute of Scientific and Technical Information of China (English)

    Deng Fu-Guo; Li Xi-Han; Li Chun-Yan; Zhou Ping; Zhou Hong-Yu

    2007-01-01

    In this paper a scheme for quantum secure direct communication (QSDC) network is proposed with a sequence of polarized single photons. The single photons are prepared originally in the same state |0> by the servers on the network,which will reduce the difficulty for the legitimate users to check eavesdropping largely. The users code the information on the single photons with two unitary operations which do not change their measuring bases. Some decoy photons,which are produced by operating the sample photons with a Hadamard, are used for preventing a potentially dishonest server from eavesdropping the quantum lines freely. This scheme is an economical one as it is the easiest way for QSDC network communication securely.

  1. Ultrafast Quantum State Control of a Single Trapped Neutral Atom

    CERN Document Server

    Jones, M P A; Ga"etan, A; Zhang, J; Messin, G; Browaeys, A; Grangier, P; Jones, Matthew P. A.; Beugnon, Jerome; Ga\\"{e}tan, Alpha; Zhang, Junxiang; Messin, Gaetan; Browaeys, Antoine; Grangier, Philippe

    2006-01-01

    We demonstrate the initialisation, read-out and high-speed manipulation of a qubit stored in a single 87 Rb atom trapped in a submicron-size optical tweezer. Single qubit rotations are performed on a sub-100 ns time scale using two-photon Raman transitions. Using the ``spin-echo'' technique, we measure an irreversible dephasing time of 34 ms. The read-out of the single atom qubit is at the quantum projection noise limit when averaging up to 1000 individual events.

  2. Quantum Otto engine using a single ion and a single thermal bath

    Science.gov (United States)

    Biswas, Asoka; Chand, Suman

    2016-05-01

    Quantum heat engines employ a quantum system as the working fluid, that gives rise to large work efficiency, beyond the limit for classical heat engines. Existing proposals for implementing quantum heat engines require that the system interacts with the hot bath and the cold bath (both modelled as a classical system) in an alternative fashion and therefore assumes ability to switch off the interaction with the bath during a certain stage of the heat-cycle. However, it is not possible to decouple a quantum system from its always-on interaction with the bath without use of complex pulse sequences. It is also hard to identify two different baths at two different temperatures in quantum domain, that sequentially interact with the system. Here, we show how to implement a quantum Otto engine without requiring to decouple the bath in a sequential manner. This is done by considering a single thermal bath, coupled to a single trapped ion. The electronic degree of freedom of the ion is chosen as a two-level working fluid while the vibrational degree of freedom plays the role of the cold bath. Measuring the electronic state mimics the release of heat into the cold bath. Thus, our model is fully quantum and exhibits very large work efficiency, asymptotically close to unity.

  3. Quantum interface between an electrical circuit and a single atom

    CERN Document Server

    Kielpinski, D; Woolley, M J; Milburn, G J; Taylor, J M

    2011-01-01

    We show how to bridge the divide between atomic systems and electronic devices by engineering a coupling between the motion of a single ion and the quantized electric field of a resonant circuit. Our method can be used to couple the internal state of an ion to the quantized circuit with the same speed as the internal-state coupling between two ions. All the well-known quantum information protocols linking ion internal and motional states can be converted to protocols between circuit photons and ion internal states. Our results enable quantum interfaces between solid state qubits, atomic qubits, and light, and lay the groundwork for a direct quantum connection between electrical and atomic metrology standards.

  4. Vacuum Rabi spectra of a single quantum emitter

    CERN Document Server

    Ota, Yasutomo; Kumagai, Naoto; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2015-01-01

    We report the observation of the vacuum Rabi splitting of a single quantum emitter by measuring its direct spontaneous emission into free space. We used a semiconductor quantum dot inside a photonic crystal nanocavity, in conjunction with an appropriate cavity design and filtering with a polarizer and an aperture, enabling the extraction of the inherently-weak emitter's signal. The emitter's vacuum Rabi spectra exhibit clear differences to those measured by detecting the cavity photon leakage. Moreover, we observed an asymmetric vacuum Rabi spectrum induced by interference between the emitter and cavity detection channels. Our observations lay the groundwork for accessing various cavity quantum electrodynamics phenomena that manifest themselves only in the emitter's direct spontaneous emission.

  5. MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations

    DEFF Research Database (Denmark)

    Svensk, O.; Suihkonen, S.; Sintonen, S.

    2012-01-01

    with InGaN/GaN superlattice structures instead of a single InGaN underneath layer. Time‐resolved photoluminescence measurements of samples with different GaN capping thicknesses show that room temperature photoluminescence decay time increases with decreasing GaN capping thickness until surface states...

  6. Single-photon experiments with liquid crystals for quantum science and quantum engineering applications

    Science.gov (United States)

    Lukishova, Svetlana G.; Liapis, Andreas C.; Bissell, Luke J.; Gehring, George M.; Winkler, Justin M.; Boyd, Robert W.

    2015-03-01

    We present here our results on using liquid crystals in experiments with nonclassical light sources: (1) single-photon sources exhibiting antibunching (separation of all photons in time), which are key components for secure quantum communication systems, and (2) entangled photon source with photons exhibiting quantum interference in a Hong-Ou- Mandel interferometer. In the first part, cholesteric liquid crystal hosts were used to create definite circular polarization of antibunched photons emitted by nanocrystal quantum dots. If the photon has unknown polarization, filtering it through a polarizer to produce the desired polarization for quantum key distribution with bits based on polarization states of photons will reduce by half the efficiency of a quantum cryptography system. In the first part, we also provide our results on observation of a circular polarized microcavity resonance in nanocrystal quantum dot fluorescence in a 1-D chiral photonic bandgap cholesteric liquid crystal microcavity. In the second part of this paper with indistinguishable, time-entangled photons, we demonstrate our experimental results on simulating quantum-mechanical barrier tunnelling phenomena. A Hong-Ou-Mandel dip (quantum interference effect) is shifted when a phase change was introduced on the way of one of entangled photons in pair (one arm of the interferometer) by inserting in this arm an electrically controlled planar-aligned nematic liquid crystal layer between two prisms in the conditions close to a frustrated total internal reflection. By applying different AC-voltages to the planar-aligned nematic layer and changing its refractive index, we can obtain various conditions for incident photon propagation - from total reflection to total transmission. Measuring changes of tunnelling times of photon through this structure with femtosecond resolution permitted us to answer some unresolved questions in quantum-mechanical barrier tunnelling phenomena.

  7. Optical levitation of microdroplet containing a single quantum dot

    CERN Document Server

    Minowa, Yosuke; Ashida, Masaaki

    2014-01-01

    Semiconductor nanocrystals, also known as quantum dots (QDs), are key ingredients in current quantum optics experiments. They serve as quantum emitters and memories and have tunable energy levels that depend not only on the material but also, through the quantum confinement effect, on the size. The resulting strongly confined electron and hole wave functions lead to large transition dipole moments, which opens a path to ultra strong coupling and even deep strong coupling between light and matter. Such efficient coupling requires the precise positioning of the QD in an optical cavity with a high quality factor and small mode volume, such as micro-Fabry--Perot cavity, whispering-gallery-mode microcavity, or photonic-crystal cavity. However, the absence of a technique for free-space positioning has limited the further research on QD-based cavity quantum electrodynamics. In this paper, we present a technique to overcome this challenge by demonstrating the optical levitation or trapping in helium gas of a single Q...

  8. Single-shot adaptive measurement for quantum-enhanced metrology

    Science.gov (United States)

    Palittpongarnpim, Pantita; Wittek, Peter; Sanders, Barry C.

    2016-09-01

    Quantum-enhanced metrology aims to estimate an unknown parameter such that the precision scales better than the shot-noise bound. Single-shot adaptive quantum-enhanced metrology (AQEM) is a promising approach that uses feedback to tweak the quantum process according to previous measurement outcomes. Techniques and formalism for the adaptive case are quite different from the usual non-adaptive quantum metrology approach due to the causal relationship between measurements and outcomes. We construct a formal framework for AQEM by modeling the procedure as a decision-making process, and we derive the imprecision and the Craḿer- Rao lower bound with explicit dependence on the feedback policy. We also explain the reinforcement learning approach for generating quantum control policies, which is adopted due to the optimal policy being non-trivial to devise. Applying a learning algorithm based on differential evolution enables us to attain imprecision for adaptive interferometric phase estimation, which turns out to be SQL when non-entangled particles are used in the scheme.

  9. Realization of a Cascaded Quantum System: Heralded Absorption of a Single Photon Qubit by a Single-Electron Charged Quantum Dot.

    Science.gov (United States)

    Delteil, Aymeric; Sun, Zhe; Fält, Stefan; Imamoğlu, Atac

    2017-04-28

    Photonic losses pose a major limitation for the implementation of a quantum state transfer between nodes of a quantum network. A measurement that heralds a successful transfer without revealing any information about the qubit may alleviate this limitation. Here, we demonstrate the heralded absorption of a single photonic qubit, generated by a single neutral quantum dot, by a single-electron charged quantum dot that is located 5 m away. The transfer of quantum information to the spin degree of freedom takes place upon the emission of a photon; for a properly chosen or prepared quantum dot, the detection of this photon yields no information about the qubit. We show that this process can be combined with local operations optically performed on the destination node by measuring classical correlations between the absorbed photon color and the final state of the electron spin. Our work suggests alternative avenues for the realization of quantum information protocols based on cascaded quantum systems.

  10. Evanescent single-molecule biosensing with quantum limited precision

    CERN Document Server

    Mauranyapin, N P; Taylor, M A; Waleed, M; Bowen, W P

    2016-01-01

    Sensors that are able to detect and track single unlabelled biomolecules are an important tool both to understand biomolecular dynamics and interactions at nanoscale, and for medical diagnostics operating at their ultimate detection limits. Recently, exceptional sensitivity has been achieved using the strongly enhanced evanescent fields provided by optical microcavities and nano-sized plasmonic resonators. However, at high field intensities photodamage to the biological specimen becomes increasingly problematic. Here, we introduce an optical nanofibre based evanescent biosensor that operates at the fundamental precision limit introduced by quantisation of light. This allows a four order-of-magnitude reduction in optical intensity whilst maintaining state-of-the-art sensitivity. It enable quantum noise limited tracking of single biomolecules as small as 3.5 nm, and surface-molecule interactions to be monitored over extended periods. By achieving quantum noise limited precision, our approach provides a pathway ...

  11. A single photoelectron transistor for quantum optical communications

    CERN Document Server

    Kosaka, H; Robinson, H D; Bandaru, P; Makita, K; Yablonovitch, E B; Kosaka, Hideo; Rao, Deepak S.; Robinson, Hans D.; Bandaru, Prabhakar; Makita, Kikuo; Yablonovitch, Eli

    2003-01-01

    A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo-ionized and repeatedly reset for the arrival of successive individual photons. This single photoelectron transistor (SPT) operating at the lambda = 1.3 mu m tele-communication band, was demonstrated by using a windowed-gate double-quantum-well InGaAs/InAlAs/InP heterostructure that was designed to provide near-zero electron g-factor. The g-factor engineering allows selection rules that would convert a photon's polarization to an electron spin polarization. The safe arrival of the photo-electric charge would trigger the commencement of the teleportation algorithm.

  12. Multi-group dynamic quantum secret sharing with single photons

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hongwei [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Ma, Haiqiang, E-mail: hqma@bupt.edu.cn [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Wei, Kejin [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Yang, Xiuqing [School of Science, Beijing Jiaotong University, Beijing 100044 (China); Qu, Wenxiu; Dou, Tianqi; Chen, Yitian; Li, Ruixue; Zhu, Wu [School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

    2016-07-15

    In this letter, we propose a novel scheme for the realization of single-photon dynamic quantum secret sharing between a boss and three dynamic agent groups. In our system, the boss can not only choose one of these three groups to share the secret with, but also can share two sets of independent keys with two groups without redistribution. Furthermore, the security of communication is enhanced by using a control mode. Compared with previous schemes, our scheme is more flexible and will contribute to a practical application. - Highlights: • A multi-group dynamic quantum secret sharing with single photons scheme is proposed. • Any one of the groups can be chosen to share secret through controlling the polarization of photons. • Two sets of keys can be shared simultaneously without redistribution.

  13. Exciton lifetime measurements on single silicon quantum dots.

    Science.gov (United States)

    Sangghaleh, Fatemeh; Bruhn, Benjamin; Schmidt, Torsten; Linnros, Jan

    2013-06-01

    We measured the exciton lifetime of single silicon quantum dots, fabricated by electron beam lithography, reactive ion etching and oxidation. The observed photoluminescence decays are of mono-exponential character with a large variation (5-45 μs) from dot to dot, even for the same emission energy. We show that this lifetime variation may be the origin of the heavily debated non-exponential (stretched) decays typically observed for ensemble measurements.

  14. Quantum Interference Induced Photon Blockade in a Coupled Single Quantum Dot-Cavity System

    CERN Document Server

    Tang, Jing; Xu, Xiulai

    2015-01-01

    We propose an experimental scheme to implement a strong photon blockade with a single quantum dot coupled to a nanocavity. The photon blockade effect can be tremendously enhanced by driving the cavity and the quantum dot simultaneously with two classical laser fields. This enhancement of photon blockade is ascribed to the quantum interference effect to avoid two-photon excitation of the cavity field. Comparing with Jaynes-Cummings model, the second-order correlation function at zero time delay $g^{(2)}(0)$ in our scheme can be reduced by two orders of magnitude and the system sustains a large intracavity photon number. A red (blue) cavity-light detuning asymmetry for photon quantum statistics with bunching or antibunching characteristics is also observed. The photon blockade effect has a controllable flexibility by tuning the relative phase between the two pumping laser fields and the Rabi coupling strength between the quantum dot and the pumping field. Moreover, the photon blockade scheme based on quantum in...

  15. Coupling single quantum dots to plasmonic nanocones: optical properties.

    Science.gov (United States)

    Meixner, Alfred J; Jäger, Regina; Jäger, Sebastian; Bräuer, Annika; Scherzinger, Kerstin; Fulmes, Julia; Krockhaus, Sven zur Oven; Gollmer, Dominik A; Kern, Dieter P; Fleischer, Monika

    2015-01-01

    Coupling a single quantum emitter, such as a fluorescent molecule or a quantum dot (QD), to a plasmonic nanostructure is an important issue in nano-optics and nano-spectroscopy, relevant for a wide range of applications, including tip-enhanced near-field optical microscopy, plasmon enhanced molecular sensing and spectroscopy, and nanophotonic amplifiers or nanolasers, to mention only a few. While the field enhancement of a sharp nanoantenna increasing the excitation rate of a very closely positioned single molecule or QD has been well investigated, the detailed physical mechanisms involved in the emission of a photon from such a system are, by far, less investigated. In one of our ongoing research projects, we try to address these issues by constructing and spectroscopically analysing geometrically simple hybrid heterostructures consisting of sharp gold cones with single quantum dots attached to the very tip apex. An important goal of this work is to tune the longitudinal plasmon resonance by adjusting the cones' geometry to the emission maximum of the core-shell CdSe/ZnS QDs at nominally 650 nm. Luminescence spectra of the bare cones, pure QDs and hybrid systems were distinguished successfully. In the next steps we will further investigate, experimentally and theoretically, the optical properties of the coupled systems in more detail, such as the fluorescence spectra, blinking statistics, and the current results on the fluorescence lifetimes, and compare them with uncoupled QDs to obtain a clearer picture of the radiative and non-radiative processes.

  16. Engineering the quantum point contact response to single-electron charging in a few-electron quantum-dot circuit

    NARCIS (Netherlands)

    Zhang, L.X.; Leburton, J.P.; Hanson, R.; Kouwenhoven, L.P.

    2004-01-01

    We show that the design of a quantum point contact adjacent to a quantum dot can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot. Our analysis is based on the self-consistent solution of coupled three-dimensional Kohn-Sham and Poisson equations for the

  17. Single-photon transistor in circuit quantum electrodynamics.

    Science.gov (United States)

    Neumeier, Lukas; Leib, Martin; Hartmann, Michael J

    2013-08-01

    We introduce a circuit quantum electrodynamical setup for a "single-photon" transistor. In our approach photons propagate in two open transmission lines that are coupled via two interacting transmon qubits. The interaction is such that no photons are exchanged between the two transmission lines but a single photon in one line can completely block or enable the propagation of photons in the other line. High on-off ratios can be achieved for feasible experimental parameters. Our approach is inherently scalable as all photon pulses can have the same pulse shape and carrier frequency such that output signals of one transistor can be input signals for a consecutive transistor.

  18. Computational materials design for efficient red luminescence: InGaN codoped with Eu and the donor-acceptor pair of Mg and O

    Science.gov (United States)

    Masago, Akira; Uemoto, Mitsuharu; Fukushima, Tetsuya; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2017-02-01

    We propose that InGaN is superior to GaN as a host material for GaN-based red-light-emitting diodes (LEDs). In our previous paper, we proposed that codoping of Eu and a Mg and O pair generates an efficiently luminescent center in GaN. This is caused by the quantum confinement of the quantum dot constructions generated by the codoping method. The present report illustrates that InGaN allows the expansion of such electronic structures throughout the crystal owing to spontaneous phase decomposition. This can be used for self-organized fabrication and self-regenerated products.

  19. A novel high-efficiency single-mode quantum dot single photon source

    DEFF Research Database (Denmark)

    Gerard, J.M.; Gregersen, Niels; Nielsen, Torben Roland

    2008-01-01

    We present a novel single-mode single photon source exploiting the emission of a semiconductor quantum dot (QD) located inside a photonic wire. Besides an excellent coupling (>95%) of QD spontaneous emission to the fundamental guided mode [1], we show that a single photon collection efficiency...... above 80% within a 0.5 numerical aperture can be achieved using a bottom Bragg mirror and a tapering of the nanowire tip. Because this photon collection strategy does not exploit the Purcell effect, it could also be efficiently applied to broadband single photon emitters such as F-centers in diamond....

  20. On-Chip Single-Plasmon Nanocircuit Driven by a Self-Assembled Quantum Dot.

    Science.gov (United States)

    Wu, Xiaofei; Jiang, Ping; Razinskas, Gary; Huo, Yongheng; Zhang, Hongyi; Kamp, Martin; Rastelli, Armando; Schmidt, Oliver G; Hecht, Bert; Lindfors, Klas; Lippitz, Markus

    2017-07-12

    Quantum photonics holds great promise for future technologies such as secure communication, quantum computation, quantum simulation, and quantum metrology. An outstanding challenge for quantum photonics is to develop scalable miniature circuits that integrate single-photon sources, linear optical components, and detectors on a chip. Plasmonic nanocircuits will play essential roles in such developments. However, for quantum plasmonic circuits, integration of stable, bright, and narrow-band single photon sources in the structure has so far not been reported. Here we present a plasmonic nanocircuit driven by a self-assembled GaAs quantum dot. Through a planar dielectric-plasmonic hybrid waveguide, the quantum dot efficiently excites narrow-band single plasmons that are guided in a two-wire transmission line until they are converted into single photons by an optical antenna. Our work demonstrates the feasibility of fully on-chip plasmonic nanocircuits for quantum optical applications.

  1. Thermal effects on photon-induced quantum transport in a single quantum dot.

    Science.gov (United States)

    Assunção, M O; de Oliveira, E J R; Villas-Bôas, J M; Souza, F M

    2013-04-03

    We theoretically investigate laser induced quantum transport in a single quantum dot attached to electrical contacts. Our approach, based on a nonequilibrium Green function technique, allows us to include thermal effects on the photon-induced quantum transport and excitonic dynamics, enabling the study of non-Markovian effects. By solving a set of coupled integrodifferential equations, involving correlation and propagator functions, we obtain the photocurrent and the dot occupation as a function of time. Two distinct sources of decoherence, namely, incoherent tunneling and thermal fluctuations, are observed in the Rabi oscillations. As temperature increases, a thermally activated Pauli blockade results in a suppression of these oscillations. Additionally, the interplay between photon and thermally induced electron populations results in a switch of the current sign as time evolves and its stationary value can be maximized by tuning the laser intensity.

  2. Quantum efficiency of a single microwave photon detector based on a semiconductor double quantum dot

    Science.gov (United States)

    Wong, Clement H.; Vavilov, Maxim G.

    2017-01-01

    Motivated by recent interest in implementing circuit quantum electrodynamics with semiconducting quantum dots, we consider a double quantum dot (DQD) capacitively coupled to a superconducting resonator that is driven by the microwave field of a superconducting transmission line. We analyze the DQD current response using input-output theory and show that the resonator-coupled DQD is a sensitive microwave single photon detector. Using currently available experimental parameters of DQD-resonator coupling and dissipation, including the effects of 1 /f charge noise and phonon noise, we determine the parameter regime for which incident photons are completely absorbed and near-unit ≳98 % efficiency can be achieved. We show that this regime can be reached by using very high quality resonators with quality factor Q ≃105 .

  3. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

    Science.gov (United States)

    2014-01-01

    This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser. PMID:25147848

  4. Theoretical modeling of intensity noise in InGaN semiconductor lasers.

    Science.gov (United States)

    Ahmed, Moustafa

    2014-01-01

    This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.

  5. Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

    Science.gov (United States)

    Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong

    2013-10-01

    We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep InGaN QWs and GaN barriers. Without using any phosphors, this monolithic LED chip can be tuned to realize wide-range multicolor emissions from red to yellow under different injection currents. In partical, when the injection current reaches an upper level above 100 mA, the LEDs will achieve white emission with a very high color rending index (CRI) of 85.6. This color-tunable characteristic is attributed to the carrier redistribution in the shallow/deep QWs and the energy band filling effect as well.

  6. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Moustafa Ahmed

    2014-01-01

    Full Text Available This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN. We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.

  7. Single-Photon Emission from a Single InAs Quantum Dot

    Institute of Scientific and Technical Information of China (English)

    DOU Xiu-Ming; SUN Bao-Quan; HUANG She-Song; NI Hai-Qiao; NIU Zhi-Chuan

    2008-01-01

    Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots.Exciton and biexciton emissions,whose photoluminescence intensities have linear and quadratic excitation power dependences,respectively,are identified.Under pulsed laser excitation,the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed,which is a clear evidence of single photon emission.

  8. Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

    Science.gov (United States)

    Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

    2013-04-19

    The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

  9. Probing silicon quantum dots by single-dot techniques

    Science.gov (United States)

    Sychugov, Ilya; Valenta, Jan; Linnros, Jan

    2017-02-01

    Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.

  10. Single-ion microwave near-field quantum sensor

    Science.gov (United States)

    Wahnschaffe, M.; Hahn, H.; Zarantonello, G.; Dubielzig, T.; Grondkowski, S.; Bautista-Salvador, A.; Kohnen, M.; Ospelkaus, C.

    2017-01-01

    We develop an intuitive model of 2D microwave near-fields in the unusual regime of centimeter waves localized to tens of microns. Close to an intensity minimum, a simple effective description emerges with five parameters that characterize the strength and spatial orientation of the zero and first order terms of the near-field, as well as the field polarization. Such a field configuration is realized in a microfabricated planar structure with an integrated microwave conductor operating near 1 GHz. We use a single 9 Be+ ion as a high-resolution quantum sensor to measure the field distribution through energy shifts in its hyperfine structure. We find agreement with simulations at the sub-micron and few-degree level. Our findings give a clear and general picture of the basic properties of oscillatory 2D near-fields with applications in quantum information processing, neutral atom trapping and manipulation, chip-scale atomic clocks, and integrated microwave circuits.

  11. Polarization Properties of Quantum-Dot-Based Single Photon Sources

    Institute of Scientific and Technical Information of China (English)

    HAN Shuo; HAO Zhi-Biao; LUO Yi

    2007-01-01

    Polarization properties of single photons emitted by optical pumping from a single quantum dot (QD) are studied by using a four-level system model. The model is capable of explaining the polarization uncertainty observed in single photon emission experiments. It is found that the dependence of photon emission efficiency and polarization visibility on pump power are opposite in general cases. By employing QDs with small size and strong carrier confinement, the photon polarization visibility under high pump power can be improved. In addition, embedding a QD into a well designed microcavity is also found to be favourable, whereas the trade-off between high polarization visibility and multi-photon emission is noted.

  12. Investigating and Improving Student Understanding of Quantum Mechanics in the Context of Single Photon Interference

    Science.gov (United States)

    Marshman, Emily; Singh, Chandralekha

    2017-01-01

    Single photon experiments involving a Mach-Zehnder interferometer can illustrate the fundamental principles of quantum mechanics, e.g., the wave-particle duality of a single photon, single photon interference, and the probabilistic nature of quantum measurement involving single photons. These experiments explicitly make the connection between the…

  13. Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

    Science.gov (United States)

    Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

    2017-08-01

    Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

  14. Single-atom quantum control of macroscopic mechanical oscillators

    Science.gov (United States)

    Bariani, F.; Otterbach, J.; Tan, Huatang; Meystre, P.

    2014-01-01

    We investigate a hybrid electromechanical system consisting of a pair of charged macroscopic mechanical oscillators coupled to a small ensemble of Rydberg atoms. The resonant dipole-dipole coupling between an internal atomic Rydberg transition and the mechanics allows cooling to its motional ground state with a single atom despite the considerable mass imbalance between the two subsystems. We show that the rich electronic spectrum of Rydberg atoms, combined with their high degree of optical control, paves the way towards implementing various quantum-control protocols for the mechanical oscillators.

  15. Optimised quantum hacking of superconducting nanowire single-photon detectors

    Science.gov (United States)

    Tanner, Michael G.; Makarov, Vadim; Hadfield, Robert H.

    2014-03-01

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  16. Optimised quantum hacking of superconducting nanowire single-photon detectors

    CERN Document Server

    Tanner, Michael G; Hadfield, Robert H

    2013-01-01

    We explore optimised control of superconducting nanowire single-photon detectors (SNSPDs) through bright illumination. We consider the behaviour of the SNSPD in the shunted configuration (a practical measure to avoid latching) in long-running quantum key distribution experiments. We propose and demonstrate an effective bright-light attack on this realistic configuration, by applying transient blinding illumination lasting for a fraction of a microsecond and producing several deterministic fake clicks during this time. We show that this attack does not lead to elevated timing jitter in the spoofed output pulse, and is hence not introducing significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  17. Exact Quantum Logic Gates with a Single Trapped Cold Ion

    Institute of Scientific and Technical Information of China (English)

    韦联福; 刘世勇; 雷啸霖

    2001-01-01

    We present an alternative scheme to exactly implement one-qubit and two-qubit quantum gates with a single trapped cold ion driven by a travelling laser field. The internal degree of freedom of the ion acts as the target qubit and the control qubit is encoded by two Fock states of the external vibration of the ion. The conditions to realize these operations, including the duration of each applied laser pulse and Lamb-Dicke parameter, are derived. In our scheme neither the auxiliary atomic level nor the Lamb-Dicke approximation is required. The multiquantum transition between the internal and external degrees of freedom of the ion is considered.

  18. Multi-group dynamic quantum secret sharing with single photons

    Science.gov (United States)

    Liu, Hongwei; Ma, Haiqiang; Wei, Kejin; Yang, Xiuqing; Qu, Wenxiu; Dou, Tianqi; Chen, Yitian; Li, Ruixue; Zhu, Wu

    2016-07-01

    In this letter, we propose a novel scheme for the realization of single-photon dynamic quantum secret sharing between a boss and three dynamic agent groups. In our system, the boss can not only choose one of these three groups to share the secret with, but also can share two sets of independent keys with two groups without redistribution. Furthermore, the security of communication is enhanced by using a control mode. Compared with previous schemes, our scheme is more flexible and will contribute to a practical application.

  19. Single Photon Detector at Telecom Wavelengths for Quantum Key Distribution

    Institute of Scientific and Technical Information of China (English)

    LIU Yun; WU Qing-Lin; HAN Zheng-Fu; DAI Yi-Min; QUO Guang-Can

    2006-01-01

    Using InGaAs/InP avalanche photodiodes as sensors and coaxial cables as reflection lines to reject spike signals, we have firstly employed the "timing filtering" gates to pick out avalanche signals and have realized the single photon detection at 1550 nm in the temperature range of thermoelectric cooling. A ratio of the dark count rate to the detection efficiency was obtained to be 9×10-5 at 223K. When the detector is applied to a practical quantum key distribution system, the transmission distance can reach 89.5km and the repetition rate can reach 0.33MHz.

  20. Hidden Vacuum Rabi Oscillations: Dynamical Quantum Superpositions of On/Off Interaction between a Single Quantum Dot and a Microcavity

    Science.gov (United States)

    Ridolfo, A.; Stassi, R.; Di Stefano, O.

    2017-06-01

    We show that it is possible to realize quantum superpositions of switched-on and -off strong light-matter interaction in a single quantum dot- semiconductor microcavity system. Such superpositions enable the observation of counterintuitive quantum conditional dynamics effects. Situations are possible where cavity photons as well as the emitter luminescence display exponential decay but their joint detection probability exhibits vacuum Rabi oscillations. Remarkably, these quantum correlations are also present in the nonequilibrium steady state spectra of such coherently driven dissipative quantum systems.

  1. Polarization control of single photon quantum orbital angular momentum states.

    Science.gov (United States)

    Nagali, E; Sciarrino, F; De Martini, F; Piccirillo, B; Karimi, E; Marrucci, L; Santamato, E

    2009-10-12

    The orbital angular momentum of photons, being defined in an infinite-dimensional discrete Hilbert space, offers a promising resource for high-dimensional quantum information protocols in quantum optics. The biggest obstacle to its wider use is presently represented by the limited set of tools available for its control and manipulation. Here, we introduce and test experimentally a series of simple optical schemes for the coherent transfer of quantum information from the polarization to the orbital angular momentum of single photons and vice versa. All our schemes exploit a newly developed optical device, the so-called "q-plate", which enables the manipulation of the photon orbital angular momentum driven by the polarization degree of freedom. By stacking several q-plates in a suitable sequence, one can also have access to higher-order angular momentum subspaces. In particular, we demonstrate the control of the orbital angular momentum m degree of freedom within the subspaces of |m| = 2h and |m| = 4h per photon.

  2. Quantum state tomography of a single qubit: comparison of methods

    Science.gov (United States)

    Schmied, Roman

    2016-10-01

    The tomographic reconstruction of the state of a quantum-mechanical system is an essential component in the development of quantum technologies. We present an overview of different tomographic methods for determining the quantum-mechanical density matrix of a single qubit: (scaled) direct inversion, maximum likelihood estimation (MLE), minimum Fisher information distance and Bayesian mean estimation (BME). We discuss the different prior densities in the space of density matrices, on which both MLE and BME depend, as well as ways of including experimental errors and of estimating tomography errors. As a measure of the accuracy of these methods, we average the trace distance between a given density matrix and the tomographic density matrices it can give rise to through experimental measurements. We find that the BME provides the most accurate estimate of the density matrix, and suggest using either the pure-state prior, if the system is known to be in a rather pure state, or the Bures prior if any state is possible. The MLE is found to be slightly less accurate. We comment on the extrapolation of these results to larger systems.

  3. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Science.gov (United States)

    Baart, T. A.; Eendebak, P. T.; Reichl, C.; Wegscheider, W.; Vandersypen, L. M. K.

    2016-05-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  4. Realization of electrically tunable single quantum dot nanocavities

    Energy Technology Data Exchange (ETDEWEB)

    Hofbauer, Felix Florian Georg

    2009-03-15

    We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot

  5. Optimal Qubit Control Using Single-Flux Quantum Pulses

    Science.gov (United States)

    Liebermann, Per J.; Wilhelm, Frank K.

    2016-08-01

    Single-flux quantum pulses are a natural candidate for on-chip control of superconducting qubits. We show that they can drive high-fidelity single-qubit rotations—even in leaky transmon qubits—if the pulse sequence is suitably optimized. We achieve this objective by showing that, for these restricted all-digital pulses, genetic algorithms can be made to converge to arbitrarily low error, verified up to a reduction in gate error by 2 orders of magnitude compared to an evenly spaced pulse train. Timing jitter of the pulses is taken into account, exploring the robustness of our optimized sequence. This approach takes us one step further towards on-chip qubit controls.

  6. Single photon delayed feedback: a way to stabilize intrinsic quantum cavity electrodynamics.

    Science.gov (United States)

    Carmele, Alexander; Kabuss, Julia; Schulze, Franz; Reitzenstein, Stephan; Knorr, Andreas

    2013-01-01

    We propose a scheme to control cavity quantum electrodynamics in the single photon limit by delayed feedback. In our approach a single emitter-cavity system, operating in the weak coupling limit, can be driven into the strong coupling-type regime by an external mirror: The external loop produces Rabi oscillations directly connected to the electron-photon coupling strength. As an expansion of typical cavity quantum electrodynamics, we treat the quantum correlation of external and internal light modes dynamically and demonstrate a possible way to implement a fully quantum mechanical time-delayed feedback. Our theoretical approach proposes a way to experimentally feedback control quantum correlations in the single photon limit.

  7. Ambient nanoscale sensing with single spins using quantum decoherence

    Science.gov (United States)

    McGuinness, L. P.; Hall, L. T.; Stacey, A.; Simpson, D. A.; Hill, C. D.; Cole, J. H.; Ganesan, K.; Gibson, B. C.; Prawer, S.; Mulvaney, P.; Jelezko, F.; Wrachtrup, J.; Scholten, R. E.; Hollenberg, L. C. L.

    2013-07-01

    Magnetic resonance detection is one of the most important tools used in life-sciences today. However, as the technique detects the magnetization of large ensembles of spins it is fundamentally limited in spatial resolution to mesoscopic scales. Here we detect the natural fluctuations of nanoscale spin ensembles at ambient temperatures by measuring the decoherence rate of a single quantum spin in response to introduced extrinsic target spins. In our experiments 45 nm nanodiamonds with single nitrogen-vacancy (NV) spins were immersed in solution containing spin 5/2 Mn2+ ions and the NV decoherence rate measured though optically detected magnetic resonance. The presence of both freely moving and accreted Mn spins in solution were detected via significant changes in measured NV decoherence rates. Analysis of the data using a quantum cluster expansion treatment of the NV-target system found the measurements to be consistent with the detection of 2500 motionally diffusing Mn spins over an effective volume of (16 nm)3 in 4.2 s, representing a reduction in target ensemble size and acquisition time of several orders of magnitude over conventional, magnetic induction approaches to electron spin resonance detection. These measurements provide the basis for the detection of nanovolume spins in solution, such as in the internal compartments of living cells, and are directly applicable to scanning probe architectures.

  8. Single-loop multiple-pulse nonadiabatic holonomic quantum gates

    Science.gov (United States)

    Herterich, Emmi; Sjöqvist, Erik

    2016-11-01

    Nonadiabatic holonomic quantum computation provides the means to perform fast and robust quantum gates by utilizing the resilience of non-Abelian geometric phases to fluctuations of the path in state space. While the original scheme [E. Sjöqvist et al., New J. Phys. 14, 103035 (2012), 10.1088/1367-2630/14/10/103035] needs two loops in the Grassmann manifold (i.e., the space of computational subspaces of the full state space) to generate an arbitrary holonomic one-qubit gate, we propose single-loop one-qubit gates that constitute an efficient universal set of holonomic gates when combined with an entangling holonomic two-qubit gate. Our one-qubit gate is realized by dividing the loop into path segments, each of which is generated by a Λ -type Hamiltonian. We demonstrate that two path segments are sufficient to realize arbitrary single-loop holonomic one-qubit gates. We describe how our scheme can be implemented experimentally in a generic atomic system exhibiting a three-level Λ -coupling structure by utilizing carefully chosen laser pulses.

  9. Construction of a single atom trap for quantum information protocols

    Science.gov (United States)

    Shea, Margaret E.; Baker, Paul M.; Gauthier, Daniel J.; Duke Physics Department Team

    2016-05-01

    The field of quantum information science addresses outstanding problems such as achieving fundamentally secure communication and solving computationally hard problems. Great progress has been made in the field, particularly using photons coupled to ions and super conducting qubits. Neutral atoms are also interesting for these applications and though the technology for control of neutrals lags behind that of trapped ions, they offer some key advantages: primarily coupling to optical frequencies closer to the telecom band than trapped ions or superconducting qubits. Here we report progress on constructing a single atom trap for 87 Rb. This system is a promising platform for studying the technical problems facing neutral atom quantum computing. For example, most protocols destroy the trap when reading out the neutral atom's state; we will investigate an alternative non-destructive state detection scheme. We detail the experimental systems involved and the challenges addressed in trapping a single atom. All of our hardware components are off the shelf and relatively inexpensive. Unlike many other systems, we place a high numerical aperture lens inside our vacuum system to increase photon collection efficiency. We gratefully acknowledge the financial support of the ARO through Grant # W911NF1520047.

  10. Quantum to Classical Transition in a Single-Ion Laser

    CERN Document Server

    Dubin, François; Barros, Helena G; Stute, Andreas; Becher, Christoph; Schmidt, Piet O; Blatt, Rainer

    2010-01-01

    Stimulated emission of photons from a large number of atoms into the mode of a strong light field is the principle mechanism for lasing in "classical" lasers. The onset of lasing is marked by a threshold which can be characterised by a sharp increase in photon flux as a function of external pumping strength. The same is not necessarily true for the fundamental building block of a laser: a single trapped atom interacting with a single optical radiation mode. It has been shown that such a "quantum" laser can exhibit thresholdless lasing in the regime of strong coupling between atom and radiation field. However, although theoretically predicted, a threshold at the single-atom level could not be experimentally observed so far. Here, we demonstrate and characterise a single-atom laser with and without threshold behaviour by changing the strength of atom-light field coupling. We observe the establishment of a laser threshold through the accumulation of photons in the optical mode even for a mean photon number subst...

  11. Multi-color single particle tracking with quantum dots.

    Directory of Open Access Journals (Sweden)

    Eva C Arnspang

    Full Text Available Quantum dots (QDs have long promised to revolutionize fluorescence detection to include even applications requiring simultaneous multi-species detection at single molecule sensitivity. Despite the early promise, the unique optical properties of QDs have not yet been fully exploited in e. g. multiplex single molecule sensitivity applications such as single particle tracking (SPT. In order to fully optimize single molecule multiplex application with QDs, we have in this work performed a comprehensive quantitative investigation of the fluorescence intensities, fluorescence intensity fluctuations, and hydrodynamic radii of eight types of commercially available water soluble QDs. In this study, we show that the fluorescence intensity of CdSe core QDs increases as the emission of the QDs shifts towards the red but that hybrid CdSe/CdTe core QDs are less bright than the furthest red-shifted CdSe QDs. We further show that there is only a small size advantage in using blue-shifted QDs in biological applications because of the additional size of the water-stabilizing surface coat. Extending previous work, we finally also show that parallel four color multicolor (MC-SPT with QDs is possible at an image acquisition rate of at least 25 Hz. We demonstrate the technique by measuring the lateral dynamics of a lipid, biotin-cap-DPPE, in the cellular plasma membrane of live cells using four different colors of QDs; QD565, QD605, QD655, and QD705 as labels.

  12. Quantum Correlations between Single Telecom Photons and a Multimode On-Demand Solid-State Quantum Memory

    Science.gov (United States)

    Seri, Alessandro; Lenhard, Andreas; Rieländer, Daniel; Gündoǧan, Mustafa; Ledingham, Patrick M.; Mazzera, Margherita; de Riedmatten, Hugues

    2017-04-01

    Quantum correlations between long-lived quantum memories and telecom photons that can propagate with low loss in optical fibers are an essential resource for the realization of large-scale quantum information networks. Significant progress has been realized in this direction with atomic and solid-state systems. Here, we demonstrate quantum correlations between a telecom photon and a multimode on-demand solid state quantum memory. This is achieved by mapping a correlated single photon onto a spin collective excitation in a Pr3 +:Y2SiO5 crystal for a controllable time. The stored single photons are generated by cavity-enhanced spontaneous parametric down-conversion and heralded by their partner photons at telecom wavelength. These results represent the first demonstration of a multimode on-demand solid state quantum memory for external quantum states of light. They provide an important resource for quantum repeaters and pave the way for the implementation of quantum information networks with distant solid state quantum nodes.

  13. Single atom detection in ultracold quantum gases: a review of current progress.

    Science.gov (United States)

    Ott, Herwig

    2016-05-01

    The recent advances in single atom detection and manipulation in experiments with ultracold quantum gases are reviewed. The discussion starts with the basic principles of trapping, cooling and detecting single ions and atoms. The realization of single atom detection in ultracold quantum gases is presented in detail and the employed methods, which are based on light scattering, electron scattering, field ionization and direct neutral particle detection are discussed. The microscopic coherent manipulation of single atoms in a quantum gas is also covered. Various examples are given in order to highlight the power of these approaches to study many-body quantum systems.

  14. Pure dephasing of single Mn spin in semiconductor quantum dots

    Science.gov (United States)

    Liu, Dingyang; Lai, Wenxi; Yang, Wen

    2017-08-01

    We present comprehensive analytical and numerical studies on the pure dephasing of a single Mn spin in a semiconductor quantum dot due to (i) its sp-d exchange interaction with an electronic environment, and (ii) its hyperfine interaction with the nuclear spin environment. For (i), by modeling the electronic environment by an open two-level system, we provide exact analytical expressions and present detailed analysis for the Mn spin pure dephasing in both the Markovian and non-Markovian regimes. This provides a clear physical picture and a general theoretical framework based on which we estimate the Mn spin pure dephasing due to various fluctuations (such as thermal excitation, optical pumping, tunneling, or electron/hole spin relaxation) of the electronic environment and reveals a series of interesting behaviors, such as thermal, optical, and electrical control of the crossover between the Markov and non-Markov regimes. In particular, we find rapid Mn spin pure dephasing on a nanosecond time scale by the thermal fluctuation and optical pumping, but these mechanisms can be strongly suppressed by shifting the electron envelope function relative to the Mn atom with an external electric field through the quantum-confined Stark effect. The thermal fluctuation mechanism is also exponentially suppressed at low temperature. For (ii), we find that the Mn spin dephasing time is limited by the thermal fluctuation of the nuclear spins to a few microseconds even at low temperature and its value varies from sample to sample, depending on the distribution of spinful isotopes on the nearest-neighbor sites surrounding the substitutional Mn atom. Our findings may be useful to understand and suppress the Mn spin pure dephasing for its applications in quantum information processing.

  15. Experimental realization of highly efficient broadband coupling of single quantum dots to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian;

    2008-01-01

    We present time-resolved spontaneous emission measurements of single quantum dots embedded in photonic crystal waveguides. Quantum dots that couple to a photonic crystal waveguide are found to decay up to 27 times faster than uncoupled quantum dots. From these measurements -factors of up to 0.89 ...

  16. Efficient controlled-phase gate for single-spin qubits in quantum dots

    NARCIS (Netherlands)

    Meunier, T.; Calado, V.E.; Vandersypen, L.M.K.

    2011-01-01

    Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of a magnetic field or g-factor gradients in coupled quantum dot systems

  17. Tuning single GaAs quantum dots in resonance with a rubidium vapor

    NARCIS (Netherlands)

    Akopian, N.; Perinetti, U.; Wang, L.; Rastelli, A.; Schmidt, O.G.; Zwiller, V.

    2010-01-01

    We study single GaAs quantum dots with optical transitions that can be brought into resonance with the widely used D2 transitions of rubidium atoms. We achieve resonance by Zeeman or Stark shifting the quantum dot levels. We discuss an energy stabilization scheme based on the absorption of quantum d

  18. Real-time single-molecule imaging of quantum interference

    CERN Document Server

    Juffmann, Thomas; Müllneritsch, Michael; Asenbaum, Peter; Tsukernik, Alexander; Tüxen, Jens; Mayor, Marcel; Cheshnovsky, Ori; Arndt, Markus

    2014-01-01

    The observation of interference patterns in double-slit experiments with massive particles is generally regarded as the ultimate demonstration of the quantum nature of these objects. Such matter-wave interference has been observed for electrons, neutrons, atoms and molecules and it differs from classical wave-physics in that it can even be observed when single particles arrive at the detector one by one. The build-up of such patterns in experiments with electrons has been described as the "most beautiful experiment in physics". Here we show how a combination of nanofabrication and nanoimaging methods allows us to record the full two-dimensional build-up of quantum diffraction patterns in real-time for phthalocyanine molecules PcH2 and their tailored derivatives F24PcH2 with a mass of 1298 amu. A laser-controlled micro-evaporation source was used to produce a beam of molecules with the required intensity and coherence and the gratings were machined in 10 nm thick silicon nitride membranes to reduce the effect ...

  19. Quantum key distribution system in standard telecommunications fiber using a short wavelength single-photon source

    CERN Document Server

    Collins, R J; Fernandez, V; Gordon, K J; Makhonin, M N; Timpson, J A; Tahraoui, A; Hopkinson, M; Fox, A M; Skolnick, M S; Buller, G S; 10.1063/1.3327427

    2010-01-01

    A demonstration of the principles of quantum key distribution is performed using a single-photon source in a proof of concept test-bed over a distance of 2 km in standard telecommunications optical fiber. The single-photon source was an optically-pumped quantum dot in a microcavity emitting at a wavelength of 895 nm. Characterization of the quantum key distribution parameters was performed at a range of different optical excitation powers. An investigation of the effect of varying the optical excitation power of the quantum dot microcavity on the quantum bit error rate and cryptographic key exchange rate of the system are presented.

  20. Quantum-enhanced metrology with the single-mode coherent states of an optical cavity inside a quantum feedback loop

    Science.gov (United States)

    Clark, Lewis A.; Stokes, Adam; Beige, Almut

    2016-08-01

    In this paper, we use the nonlinear generator of dynamics of the individual quantum trajectories of an optical cavity inside an instantaneous quantum feedback loop to measure the phase shift between two pathways of light with a precision above the standard quantum limit. The feedback laser provides a reference frame and constantly increases the dependence of the state of the resonator on the unknown phase. Since our quantum metrology scheme can be implemented with current technology and does not require highly efficient single photon detectors, it should be of practical interest until highly entangled many-photon states become more readily available.

  1. Single photon emission and quantum ring-cavity coupling in InAs/GaAs quantum rings

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo, E; Nowak, A K; Sanvitto, D; Meulen, H P van der; Calleja, J M [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); MartInez, L J; Prieto, I; Alija, A R; Granados, D; Taboada, A G; GarcIa, J M; Postigo, P A [Instituto de Microelectronica de Madrid, Centro Nacional de MicrotecnologIa, CSIC, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid (Spain); Sarkar, D, E-mail: eva.gallardo@uam.e [Department of Physics and Astronomy, University of Sheffield, S3 7RH (United Kingdom)

    2010-02-01

    Different InAs/GaAs quantum rings embedded in a photonic crystal microcavity are studied by quantum correlation measurements. Single photon emission, with g{sup (2)}(0) values around 0.3, is demonstrated for a quantum ring not coupled to the microcavity. Characteristic rise-times are found to be longer for excitons than for biexcitons, resulting in the time asymmetry of the exciton-biexciton cross-correlation. No antibunching is observed in another quantum ring weakly coupled to the microcavity.

  2. Design infrastructure for Rapid Single Flux Quantum circuits

    Science.gov (United States)

    Toepfer, Hannes; Ortlepp, Thomas

    2009-11-01

    Cryoelectronic integrated circuits based on Rapid Single Flux Quantum (RSFQ) technology are promising candidates for realizing systems exhibiting very high performance in combination with very low-power consumption. Like other superconductive logic circuits, they are characterized by a high switching speed. Their unique feature consists in the particular representation of binary information by means of short transient voltage pulses. The development of RSFQ circuits and systems requires a comprehensive design approach, supported by appropriate tools. Within the recent years, a dedicated design infrastructure has been developed in Europe in close association with a foundry for digital RSFQ integrated circuits. As a result, RSFQ technology has matured to such a level that engineering efforts enable the development of integrated circuits. In the contribution, the basic features of the RSFQ circuit design are addressed within the context of technical and infrastructural issues of implementation from a European perspective.

  3. Probing light emission from quantum wells within a single nanorod

    Science.gov (United States)

    Bruckbauer, Jochen; Edwards, Paul R.; Bai, Jie; Wang, Tao; Martin, Robert W.

    2013-09-01

    Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.

  4. Efficient fiber-coupled single-photon sources based on quantum dots

    DEFF Research Database (Denmark)

    Daveau, Raphaël Sura

    refrigeration with coupled quantum wells. Many photonic quantum information processing applications would benet from a highbrightness, ber-coupled source of triggered single photons. This thesis presents a study of such sources based on quantum dots coupled to unidirectional photonic-crystal waveguide devices......This thesis presents the study of solid-state quantum emitters in two dierent forms. The rst part of the thesis deals with quantum dot based single-photon sources with an emphasis on ecient photon extraction into an optical ber. The second part of the thesis covers a theoretical study of optical...... the characterization of single quantum dots. The second method, evanescent coupling from a tapered waveguide to a microber, demonstrates a chip-to-ber coupling eciency exceeding 80 % in passive re- ection measurements. The characterization of quantum dots from this device establishes a ber-coupled source eciency of 15...

  5. Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range

    Science.gov (United States)

    Bengoechea-Encabo, A.; Albert, S.; Lopez-Romero, D.; Lefebvre, P.; Barbagini, F.; Torres-Pardo, A.; Gonzalez-Calbet, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

    2014-10-01

    The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN (planar) layers of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells.

  6. Simulation study of InGaN intermediate-band solar cells

    Science.gov (United States)

    Chen, Kuo-Feng; Hung, Chien-Lun; Tsai, Yao-Lung

    2016-12-01

    The performances of single-junction InGaN solar cells with various intermediate bands (IBs) have been simulated using the lifetime model of a 1D simulation program called Analysis of Microelectronic and Photonic Structures (AMPS-1D). It has been observed that the maximum efficiencies of the InGaN solar cells with one, two and three intermediate bands are 47.72%, 55.10% and 58.20%, respectively, which outperform the 25.96% efficiency of the conventional single-junction structure by far. This is primarily attributed to the outstanding capability of the light harvesting from the sub-bandgap absorption. At the optimized bandgap of 2.41 eV, two-IB InGaN solar cells with the IB positions located at 0.95-1.1 eV and 0.3-0.75 eV, respectively, may have an opportunity to realize over 50% efficiency.

  7. The Electron-Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

    Institute of Scientific and Technical Information of China (English)

    XIEWen-Fang; ZHUWu

    2003-01-01

    The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots are studied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method of numerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the binding energy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupled quantum dot as a function of the dot radius for different vaJues of the distance and the magnetic field strength.

  8. All-optical tailoring of single-photon spectra in a quantum-dot microcavity system

    CERN Document Server

    Breddermann, Dominik; Binder, Rolf; Zrenner, Artur; Schumacher, Stefan

    2016-01-01

    Semiconductor quantum-dot cavity systems are promising sources for solid-state based on-demand generation of single photons for quantum communication. Commonly, the spectral characteristics of the emitted single photon are fixed by system properties such as electronic transition energies and spectral properties of the cavity. In the present work we study single-photon generation from the quantum-dot biexciton through a partly stimulated non-degenerate two-photon emission. We show that frequency and linewidth of the single photon can be fully controlled by the stimulating laser pulse, ultimately allowing for efficient all-optical spectral shaping of the single photon.

  9. Single-Photon Source for Quantum Information Based on Single Dye Molecule Fluorescence in Liquid Crystal Host

    Energy Technology Data Exchange (ETDEWEB)

    Lukishova, S.G.; Knox, R.P.; Freivald, P.; McNamara, A.; Boyd, R.W.; Stroud, Jr., C.R.; Schmid, A.W.; Marshall, K.L.

    2006-08-18

    This paper describes a new application for liquid crystals: quantum information technology. A deterministically polarized single-photon source that efficiently produces photons exhibiting antibunching is a pivotal hardware element in absolutely secure quantum communication. Planar-aligned nematic liquid crystal hosts deterministically align the single dye molecules which produce deterministically polarized single (antibunched) photons. In addition, 1-D photonic bandgap cholesteric liquid crystals will increase single-photon source efficiency. The experiments and challenges in the observation of deterministically polarized fluorescence from single dye molecules in planar-aligned glassy nematic-liquid-crystal oligomer as well as photon antibunching in glassy cholesteric oligomer are described for the first time.

  10. A triple quantum dot in a single-wall carbon nanotube

    DEFF Research Database (Denmark)

    Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.

    2008-01-01

    A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams....... Simulations using a capacitor model including tunnel coupling between neighboring dots captures the observed behavior with good agreement. Furthermore, anticrossings between indirectly coupled levels and higher order cotunneling are discussed. Udgivelsesdato: April...

  11. Single quantum dot coupled to a scanning optical antenna: a tunable superemitter.

    Science.gov (United States)

    Farahani, J N; Pohl, D W; Eisler, H-J; Hecht, B

    2005-07-01

    The interaction of a single quantum dot with a bowtie antenna is demonstrated for visible light. The antenna is generated at the apex of a Si3N4 atomic force microscopy tip by focused ion beam milling. When scanned over the quantum dot, its photoluminescence is enhanced while its excited-state lifetime is decreased. Our observations demonstrate that the relaxation channels of a single quantum emitter can be controlled by coupling to an efficiently radiating metallic nanoantenna.

  12. A single molecule investigation of the photostability of quantum dots.

    Directory of Open Access Journals (Sweden)

    Eva Christensen Arnspang

    Full Text Available Quantum dots (QDs are very attractive probes for multi-color fluorescence imaging in biological applications because of their immense brightness and reported extended photostability. We report here however that single QDs, suitable for biological applications, that are subject to continuous blue excitation from a conventional 100 W mercury arc lamp will undergo a continuous blue-switching of the emission wavelength eventually reaching a permanent dark, photobleached state. We further show that β-mercaptoethanol has a dual stabilizing effect on the fluorescence emission of QDs: 1 by increasing the frequency of time that a QD is in its fluorescent state, and 2 by decreasing the photobleaching rate. The observed QD color spectral switching is especially detrimental for multi-color single molecule applications, as we regularly observe spectral blue-shifts of 50 nm, or more even after only ten seconds of illumination. However, of significant importance for biological applications, we find that even small, biologically compatible, concentrations (25 µM of β-mercaptoethanol has a significant stabilizing effect on the emission color of QDs, but that greater amounts are required to completely abolish the spectral blue shifting or to minimize the emission intermittency of QDs.

  13. Superconducting nanowire single photon detectors for quantum information and communications

    CERN Document Server

    Wang, Zhen; Fujiwara, Mikio

    2010-01-01

    Superconducting nanowire single photon detectors (SNSPD or SSPD) are highly promising devices in the growing field of quantum information and communications technology. We have developed a practical SSPD system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SSPD system consists of six-channel SSPD devices and a compact Gifford-McMahon (GM) cryocooler, and can operate continuously on 100 V ac power without the need for any cryogens. The SSPD devices were fabricated from high-quality niobium nitride (NbN) ultra-thin films that were epitaxially grown on single-crystal MgO substrates. The packaged SSPD devices were temperature stabilized to 2.96 K +/- 10 mK. The system detection efficiency for an SSPD device with an area of 20x20 $\\mu m^2$ was found to be 2.6% and 4.5% at wavelengths of 1550 and 1310 nm, respectively, at a dark count rate of 100 c/s, and a jitter of 100 ps full width at half maximum (FWHM). We also performed ultra-fast BB84 q...

  14. Data analysis considerations in probing single quantum dot fluorescence intermittency

    Science.gov (United States)

    Krogmeier, Jeffrey R.; Hwang, Jeeseong

    2005-04-01

    The fluorescence intermittency of single, bare, CdSe/ZnS quantum dots was probed using single molecule confocal microscopy and found to demonstrate power law kinetics. Various threshold values and line fitting parameters are employed in the data analysis and their effects on the extracted power law exponents, moff and mon, are presented. The threshold is found to be critical in determining moff while having no significant effect on mon. The mean plus 2σ threshold, calculated from the background noise in the measurement, results in a more negative moff slope in comparison to the mean plus 3σ or mean plus 4σ thresholds. This is likely due to the mean plus 2σ threshold lying within the background noise outliers which mimic short on events. In contrast, the mean plus 4σ threshold is above 99.99% of the background noise while adequately below the fluorescence signal. Additionally, it is found that fitting only the ten most probable data points rather than all the data points in the log-log probability density graphs results in no significant change in moff and mon.

  15. Single Molecule Analysis of Serotonin Transporter Regulation Using Quantum Dots

    Science.gov (United States)

    Chang, Jerry; Tomlinson, Ian; Warnement, Michael; Ustione, Alessandro; Carneiro, Ana; Piston, David; Blakely, Randy; Rosenthal, Sandra

    2011-03-01

    For the first time, we implement a novel, single molecule approach to define the localization and mobility of the brain's major target of widely prescribed antidepressant medications, the serotonin transporter (SERT). SERT labeled with single quantum dot (Qdot) revealed unsuspected features of transporter mobility with cholesterol-enriched membrane microdomains (often referred to as ``lipid rafts'') and cytoskeleton network linked to transporter activation. We document two pools of surface SERT proteins defined by their lateral mobility, one that exhibits relatively free diffusion in the plasma membrane and a second that displays significantly restricted mobility and localizes to cholesterol-enriched microdomains. Diffusion model prediction and instantaneous velocity analysis indicated that stimuli that act through p38 MAPK-dependent signaling pathways to activate SERT trigger rapid SERT movements within membrane microdomains. Cytoskeleton disruption showed that SERT lateral mobility behaves a membrane raft-constrained, cytoskeleton-associated manner. Our results identify an unsuspected aspect of neurotransmitter transporter regulation that we propose reflects the dissociation of inhibitory, SERT-associated cytoskeletal anchors.

  16. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

    Directory of Open Access Journals (Sweden)

    Jeffrey C. McCallum

    2012-01-01

    Full Text Available Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.

  17. Efficiency and Coherence of Quantum-Dot Single-Photon Sources

    DEFF Research Database (Denmark)

    Madsen, Marta Arcari

    The main goal of the project has been to realize an efficient source of coherent single photons by coupling a self-assembled quantum dot to a photonic crystal waveguide. Such a source would have a wide range of applications in the field of quantum information processing. By studying the coupling...... on this result, we improved the design of the photonic crystal waveguide, and we characterized in detail the efficiency of the device and the coherence of the emitted single photons. We investigate the decoherence mechanisms affecting the quantum dots by performing resonance fluorescence experiments on emitters...... of a single charge. A very high degree of coherence can be achieved by embedding quantum dots in electrically gated samples. We show that a single quantum dot behaves like a nearly-ideal two-level system in a sample with electrical gates, and single photons emitted up to 1 μs apart show indistinguishability...

  18. High Speed Travelling Wave Single-Photon Detectors With Near-Unity Quantum Efficiency

    CERN Document Server

    Pernice, W; Minaeva, O; Li, M; Goltsman, G N; Sergienko, A V; Tang, H X

    2011-01-01

    Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. Close-to-unity photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides and achieve single photon detection efficiency up to 94% at telecom wavelengths. Our detectors are fully embedded in a scalable, low loss silicon photonic circuit and provide ultrashort timing jitter of 18ps at multi-GHz detection rates. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low ji...

  19. Proposal for a telecom quantum repeater with single atoms in optical cavities

    Science.gov (United States)

    Uphoff, Manuel; Brekenfeld, Manuel; Niemietz, Dominik; Ritter, Stephan; Rempe, Gerhard

    2016-05-01

    Quantum repeaters hold the promise to enable long-distance quantum communication via entanglement generation over arbitrary distances. Single atoms in optical cavities have been shown to be ideally suited for the experimental realization of many tasks in quantum communication. To utilize these systems for a quantum repeater, it would be desirable to operate them at telecom wavelengths. We propose to use a cascaded scheme employing transitions at telecom wavelengths between excited states of alkali atoms for entanglement generation between a single photon at telecom wavelength and a single atom at the crossing point of two cavity modes. A cavity-assisted quantum gate can be used for entanglement swapping. We estimate the performance of these systems using numerical simulations based on experimental parameters obtained for CO2 laser-machined fiber cavities in our laboratory. Finally, we show that a quantum repeater employing the aforementioned scheme and current technology could outperform corresponding schemes based on direct transmission.

  20. On-chip interference of single photons from an embedded quantum dot and an external laser

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Bentham, C.; O' Hara, J.; Royall, B.; Wilson, L. R.; Skolnick, M. S.; Fox, A. M. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Clarke, E. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2016-06-20

    In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler. This experimental approach allows us to use a classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.

  1. Ramsey fringes in a single InGaAs/GaAs quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Ester, P.; Stufler, S.; Michaelis Vasconcellos, S. de; Zrenner, A. [Universitaet Paderborn, Warburger Strasse 100, 33098 Paderborn (Germany); Bichler, M. [Walter Schottky Institut, TU Muenchen, Am Coulombwall, 85748 Garching (Germany)

    2006-08-15

    We report the observation of Ramsey fringes in single InGaAs/GaAs quantum dots. With double pulse p/2 excitation it is possible to control the occupancy and the phase of a quantum dot. The occupancy of the quantum dot oscillates with detuning. These Ramsey fringes are caused by a voltage dependent detuning of the QD. Due to the double pulse excitation the spectral sensitivity is strongly enhanced as compared to single pulse experiments. At long delay times we are able to resolve extremely narrow spectral fringes, clearly below the homogeneous linewidth of the underlying QD two level system. Our results demonstrate precision measurements on single quantum dots with strong implications for future quantum gates and quantum measurements. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Quantum detector tomography of a single-photon frequency upconversion detection system.

    Science.gov (United States)

    Ma, Jianhui; Chen, Xiuliang; Hu, Huiqin; Pan, Haifeng; Wu, E; Zeng, Heping

    2016-09-05

    We experimentally presented a full quantum detector tomography of a synchronously pumped infrared single-photon frequency upconversion detector. A maximum detection efficiency of 37.6% was achieved at the telecom wavelength of 1558 nm with a background noise about 1.0 × 10-3 counts/pulse. The corresponding internal quantum conversion efficiency reached as high as 84.4%. The detector was then systematically characterized at different pump powers to investigate the quantum decoherence behavior. Here the reconstructed positive operator valued measure elements were equivalently illustrated with the Wigner function formalism, where the quantum feature of the detector is manifested by the presence of negative values of the Wigner function. In our experiment, pronounced negativities were attained due to the high detection efficiency and low background noise, explicitly showing the quantum feature of the detector. Such quantum detector could be useful in optical quantum state engineering, quantum information processing and communication.

  3. Experimental Adiabatic Quantum Factorization under Ambient Conditions Based on a Solid-State Single Spin System.

    Science.gov (United States)

    Xu, Kebiao; Xie, Tianyu; Li, Zhaokai; Xu, Xiangkun; Wang, Mengqi; Ye, Xiangyu; Kong, Fei; Geng, Jianpei; Duan, Changkui; Shi, Fazhan; Du, Jiangfeng

    2017-03-31

    The adiabatic quantum computation is a universal and robust method of quantum computing. In this architecture, the problem can be solved by adiabatically evolving the quantum processor from the ground state of a simple initial Hamiltonian to that of a final one, which encodes the solution of the problem. Adiabatic quantum computation has been proved to be a compatible candidate for scalable quantum computation. In this Letter, we report on the experimental realization of an adiabatic quantum algorithm on a single solid spin system under ambient conditions. All elements of adiabatic quantum computation, including initial state preparation, adiabatic evolution (simulated by optimal control), and final state read-out, are realized experimentally. As an example, we found the ground state of the problem Hamiltonian S_{z}I_{z} on our adiabatic quantum processor, which can be mapped to the factorization of 35 into its prime factors 5 and 7.

  4. Quantum entanglement transition in vertically coupledtwo single-electron quantum dots with charged impurity

    Institute of Scientific and Technical Information of China (English)

    MANZhong-xiao; ZHANGZhan-jun

    2004-01-01

    Effects of a charged impurity on the ground state of two vertically coupled identical single-electron quantum dots with and without applied magnetic field are investigated. In the absence of the magnetic field, the investigations of the charged impurity effect on the quantum entanglement (QE) in some low-lying states are carried out. It is found that, both the positive charged impurity (PCI) and the negative charged impurity (NCI)reduce the QE in the low-lying states under oonsideration except that the QE in the ground state is enhanced by the NCI. Additionally, in the domain of B from 0 Tesla to 15 Tesla, the ground state energy E, the ground state angular momentum L and the ground state QE entropy S are worked out. As far as the ground state are concerned, the PCI (NCI) blocks (induces) the angular momentum phase transition and the QE phase transition besides the known fact (i. e., the PCI/NCI decreases/increases the energy) in the magnetic field.

  5. Quantum entanglement transition in vertically coupled two single-electron quantum dots with charged impurity

    Institute of Scientific and Technical Information of China (English)

    MAN Zhong-xiao; ZHANG Zhan-jun

    2004-01-01

    Effects of a charged impurity on the ground state of two vertically coupled identical single-electron quantum dots with and without applied magnetic field are investigated. In the absence of the magnetic field, the investigations of the charged impurity effect on the quantum entanglement (QE) in some low-lying states are carried out. It is found that, both the positive charged impurity (PCI) and the negative charged impurity (NCI)reduce the QE in the low-lying states under consideration except that the QE in the ground state is enhanced by the NCI. Additionally, in the domain of B from 0 Tesla to 15 Tesla, the ground state energy E, the ground state angular momentum L and the ground state QE entropy S are worked out. As far as the ground state are concerned, the PCI (NCI) blocks (induces) the angular momentum phase transition and the QE phase transition besides the known fact (i. e., the PCI/NCI decreases/increases the energy) in the magnetic field.

  6. Phase dependent spin manipulation in a single quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Santana, Ted S.; Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica

    2012-07-01

    Full text: Spin qubits in semiconductor quantum dots (QD) have attracted a lot of attention since the seminal work of Loss and DiVincenzo [1]. Controlling a single electron spin in a QD is a key ingredient for implementing a quantum information device in a solid-state system. Using ultra fast optical control is very attractive due to the possibility to achieve a spin rotation in a picosecond timescale, much shorter than the spin coherence time in such system [2]. In this work we use a density matrix formalism to model the dynamics of a system composed of a single electron loaded in a QD with a magnetic field applied in the Voigt geometry [3] and we show that it is possible to coherent manipulate its spin degree of freedom by applying two lasers pulses with different frequency, polarization and relative phase. For lasers with large detuning we can adiabatically eliminate the trion states (two electrons and one hole in the QD), obtaining an effective Hamiltonian which only couples the two electron spin. The effective coupling is strongly dependent on the relative phase between the pulses, making it possible to complete switch it on and off when desired. For phase {phi} = 0 we see the typical Rabi oscillation, as experimentally observed in Ref. [3], while for phase {phi} = {pi}/2 the interaction is completely switched off. We further investigated the common approximation used in this system which consist of reducing the four-level to a three-level system based on the large laser detuning [3]. Numerical and analytical results show that this approximation can only be used for very large Zeeman split, which cannot be achieved in InAs self-assembled QD with reasonable magnetic fields. The fourth level cannot be neglected here because the two laser pulses create an interference effect (not present in a three level system) between the different transitions and a large laser detuning does not eliminate its influence. [1] Loss D and DiVincenzo D P 1998, Phys. Rev. A 57, 120

  7. Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity.

    Science.gov (United States)

    Hu, C Y

    2017-03-28

    The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks.

  8. Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity

    Science.gov (United States)

    Hu, C. Y.

    2017-01-01

    The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks. PMID:28349960

  9. Quantum non-Gaussianity of frequency up-converted single photons.

    Science.gov (United States)

    Baune, Christoph; Schönbeck, Axel; Samblowski, Aiko; Fiurášek, Jaromír; Schnabel, Roman

    2014-09-22

    Nonclassical states of light are an important resource in today's quantum communication and metrology protocols. Quantum up-conversion of nonclassical states is a promising approach to overcome frequency differences between disparate subsystems within a quantum information network. Here, we present the generation of heralded narrowband single photons at 1550 nm via cavity enhanced spontaneous parametric down-conversion (SPDC) and their subsequent up-conversion to 532 nm. Quantum non-Gaussianity (QNG), which is an important feature for applications in quantum information science, was experimentally certified for the first time in frequency up-converted states.

  10. Ultrafast Room-Temperature Single Photon Emission from Quantum Dots Coupled to Plasmonic Nanocavities.

    Science.gov (United States)

    Hoang, Thang B; Akselrod, Gleb M; Mikkelsen, Maiken H

    2016-01-13

    Efficient and bright single photon sources at room temperature are critical components for quantum information systems such as quantum key distribution, quantum state teleportation, and quantum computation. However, the intrinsic radiative lifetime of quantum emitters is typically ∼10 ns, which severely limits the maximum single photon emission rate and thus entanglement rates. Here, we demonstrate the regime of ultrafast spontaneous emission (∼10 ps) from a single quantum emitter coupled to a plasmonic nanocavity at room temperature. The nanocavity integrated with a single colloidal semiconductor quantum dot produces a 540-fold decrease in the emission lifetime and a simultaneous 1900-fold increase in the total emission intensity. At the same time, the nanocavity acts as a highly efficient optical antenna directing the emission into a single lobe normal to the surface. This plasmonic platform is a versatile geometry into which a variety of other quantum emitters, such as crystal color centers, can be integrated for directional, room-temperature single photon emission rates exceeding 80 GHz.

  11. Online evolution reconstruction from a single measurement record with random time intervals for quantum communication

    Science.gov (United States)

    Zhou, Hua; Su, Yang; Wang, Rong; Zhu, Yong; Shen, Huiping; Pu, Tao; Wu, Chuanxin; Zhao, Jiyong; Zhang, Baofu; Xu, Zhiyong

    2017-10-01

    Online reconstruction of a time-variant quantum state from the encoding/decoding results of quantum communication is addressed by developing a method of evolution reconstruction from a single measurement record with random time intervals. A time-variant two-dimensional state is reconstructed on the basis of recovering its expectation value functions of three nonorthogonal projectors from a random single measurement record, which is composed from the discarded qubits of the six-state protocol. The simulated results prove that our method is robust to typical metro quantum channels. Our work extends the Fourier-based method of evolution reconstruction from the version for a regular single measurement record with equal time intervals to a unified one, which can be applied to arbitrary single measurement records. The proposed protocol of evolution reconstruction runs concurrently with the one of quantum communication, which can facilitate the online quantum tomography.

  12. High-fidelity single-shot Toffoli gate via quantum control

    Science.gov (United States)

    Sanders, Barry; Zahedinejad, Ehsan; Ghosh, Joydip

    2015-05-01

    A single-shot Toffoli, or controlled-controlled-NOT, gate is desirable for classical and for quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, are universal for quantum computing. The Toffoli gate is a key ingredient for (non-topological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which requires much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to directly construct single-shot Toffoli gates and devise a scheme for three nearest-neighbor-coupled superconducting transmon systems that should operate with 99.9% fidelity under realistic conditions. The gate is achieved by a non-greedy quantum control procedure using our enhanced version of the Differential Evolution algorithm. arXiv:1501.04676 Acknowledges support from AITF, NSERC, USARO and 1000 Talent Plan.

  13. Quantum interference between two single photons emitted by independently trapped atoms

    CERN Document Server

    Beugnon, J; Dingjan, J; Darquié, B; Messin, G; Browaeys, A; Grangier, P; Beugnon, Jerome; Jones, Matthew; Dingjan, Jos; Darqui\\'{e}, Benoit; Messin, Gaetan; Browaeys, Antoine; Grangier, Philippe

    2006-01-01

    When two indistinguishable single photons are fed into the two input ports of a beam splitter, the photons will coalesce and leave together from the same output port. This is a quantum interference effect, which occurs because the two possible paths where the photons leave in different output ports interfere destructively. This effect was first observed in parametric downconversion by Hong, Ou and Mandel, and then with single photons produced one after the other by the same quantum emitter. With the recent development of quantum information, a lot of attention has been devoted to this coalescence effect as a resource for quantum data processing using linear optics techniques. To ensure the scalability of schemes based on these ideas, it is crucial that indistinguishable photons are emitted by a collection of synchronized, but otherwise independent sources. In this paper, we demonstrate the quantum interference of two single photons emitted by two independently trapped single atoms, bridging the gap towards th...

  14. A highly efficient single-photon source based on a quantum dot in a photonic nanowire

    DEFF Research Database (Denmark)

    Claudon, Julien; Bleuse, Joel; Malik, Nitin Singh

    2010-01-01

    The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication,optical quantum information processing and metrology1. Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond2...... with carefully tailored ends13. Under optical pumping, we demonstrate a record source efficiency of 0.72, combined with pure single-photon emission. This non-resonant approach also provides broadband spontaneous emission control, thus offering appealing novel opportunities for the development of single-photon......–4 or a semiconductor quantum dot5–7. Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions8 and cavity quantum electrodynamics effects have been applied1,9–12. We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire...

  15. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Feltin, E.; Dorsaz, J. [NOVAGAN AG, CH-1015 Lausanne (Switzerland); Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. [EXALOS AG, CH-8952 Schlieren (Switzerland)

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  16. Semiconductor Quantum Rods as Single Molecule FluorescentBiological Labels

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Boussert, Benjamine; Koski, Kristie; Gerion, Daniele; Manna, Liberato; Le Gros, Mark; Larabell, Carolyn; Alivisatos, A. Paul

    2006-05-29

    In recent years, semiconductor quantum dots have beenapplied with great advantage in a wide range of biological imagingapplications. The continuing developments in the synthesis of nanoscalematerials and specifically in the area of colloidal semiconductornanocrystals have created an opportunity to generate a next generation ofbiological labels with complementary or in some cases enhanced propertiescompared to colloidal quantum dots. In this paper, we report thedevelopment of rod shaped semiconductor nanocrystals (quantum rods) asnew fluorescent biological labels. We have engineered biocompatiblequantum rods by surface silanization and have applied them fornon-specific cell tracking as well as specific cellular targeting. Theproperties of quantum rods as demonstrated here are enhanced sensitivityand greater resistance for degradation as compared to quantum dots.Quantum rods have many potential applications as biological labels insituations where their properties offer advantages over quantumdots.

  17. Demonstration of Quantum Entanglement between a Single Electron Spin Confined to an InAs Quantum Dot and a Photon

    Science.gov (United States)

    2013-04-16

    AUTHOR(S) J. Schaibley, A. Burgers, G. McCracken , L. Duan, P. Berman, D. Steel, A. Bracker, D. Gammon, and I. Sham 5d. PROJECT NUMBER QEST 5e...TERMS quantum entanglement, electron spin, photon, quantum dot, laser J. R. Schaibley, A. P. Burgers, G. A. McCracken , L.-M. Duan, P. R. Berman, D...Single Electron Spin Confined to an InAs Quantum Dot and a Photon J. R. Schaibley, A. P. Burgers, G.A. McCracken , L.-M. Duan, P. R. Berman, and D.G

  18. Growth mechanism of InGaN nano-umbrellas

    Science.gov (United States)

    Zhang, Xin; Haas, Benedikt; Rouvière, Jean-Luc; Robin, Eric; Daudin, Bruno

    2016-11-01

    It is demonstrated that growing InGaN nanowires in metal-rich conditions on top of GaN nanowires results in a widening of the InGaN section. It is shown that the widening is eased by stacking faults (SFs) formation, revealing facets favorable to In incorporation. It is furthermore put in evidence that partial dislocations terminating SFs efficiently contribute to elastic strain relaxation. Indium accumulation on top of the InGaN section is found to result in an axial growth rate decrease, which has been assigned to increased N–N recombination and subsequent effective nitrogen flux decrease, eventually leading to the formation of InGaN nano-umbrellas/nanoplatelets.

  19. InGaN High Temperature Photovoltaic Cells Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The objectives of this Phase II project are to develop InGaN photovoltaic cells for high temperature and/or high radiation environments to TRL 4 and to define the...

  20. Quantum Optics with Quantum Dots in Photonic Wires: Basics and Application to “Ultrabright” Single Photon Sources

    DEFF Research Database (Denmark)

    Gérard, J. M.; Claudon, J.; Bleuse, J.

    2011-01-01

    We review recent experimental and theoretical results, which highlight the strong interest of the photonic wire (PW) geometry for quantum optics experiments with solid-state emitters, and for quantum optoelectronic devices. By studying single InAs QDs embedded within single-mode cylindrical GaAs PW......, we have noticeably observed a very strong (16 fold) inhibition of their spontaneous emission rate in the thin-wire limit, and a nearly perfect funnelling of their spontaneous emission into the guided mode for larger PWs. We present a novel single -photon-source based on the emission of a quantum dot...... embedded in an engineered PW, comprising a tapered tip so as to control the radiation pattern, and an integrated hybrid bottom mirror. Unlike microcavity-based devices, this source displays for the first time simultaneously a record-high efficiency (0.73 photon per pulse) and a very low g(2) parameter...

  1. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has dev...

  2. Single-quadrature continuous-variable quantum key distribution

    DEFF Research Database (Denmark)

    Gehring, Tobias; Jacobsen, Christian Scheffmann; Andersen, Ulrik Lund

    2016-01-01

    Most continuous-variable quantum key distribution schemes are based on the Gaussian modulation of coherent states followed by continuous quadrature detection using homodyne detectors. In all previous schemes, the Gaussian modulation has been carried out in conjugate quadratures thus requiring two...... commercialization of continuous-variable quantum key distribution, provided that the low noise requirement can be achieved....

  3. Exciton dephasing in single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis;

    2000-01-01

    . The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...

  4. Strain and Quantum Dots Manipulation in Nitride Compounds for Opto-electronic Devices

    Science.gov (United States)

    2008-02-15

    long wavelength (573–601 nm) InGaN /GaN multiple quantum well light emitting diodes ( LEDs ) grown by metal organic chemical vapor deposition. These...avoid the disintegration of the InGaN quantum wells with high InN content. A redshift is observed for both the green and yellow LEDs upon decreasing...Development of Yellow and White LED’s Using InGaN -based Multi- Quantum Well Structures” P. T. Barlettaa, E. A. Berkmana, A. M. Emarab, M. J

  5. Characterization of a Spontaneous Parametric Downconversion Source for Use in Single Photon Tests of Quantum Mechanics

    Science.gov (United States)

    Alexander, Preston; McDonld, Jackson; Harrington, Jason; Smith, R. Seth

    2014-03-01

    During the past year, a quantum optics laboratory was constructed and tested at Francis Marion University. A spontaneous parametric downconversion source was used to create pairs of correlated photons for use in single photon tests of quantum mechanics. Photons from a spontaneous parametric downconversion source were detected with single photon counting modules that were purchased through the Advanced Laboratory Physics Association (ALPHA). The effect of pump polarization on the output intensity was studied. Coincidences between pairs of correlated photons were counted and plotted as a function of the angle between the single photon detectors, in order to perform a test of Conservation of Momentum. The laboratory will be used to perform single photon tests of quantum mechanics, including the Grangier experiment, single photon interference, quantum state measurement, and tests of local realism.

  6. Analysis of Photonic Quantum Nodes Based on Deterministic Single-Photon Raman Passage

    CERN Document Server

    Rosenblum, Serge

    2014-01-01

    The long-standing goal of deterministically controlling a single photon using another was recently realized in various experimental settings. Among these, a particularly attractive demonstration relied on deterministic single-photon Raman passage in a three-level Lambda system coupled to a single-mode waveguide. Beyond the ability to control the direction of propagation of one photon by the direction of another photon, this scheme can also perform as a passive quantum memory and a universal quantum gate. Relying on interference, this all-optical, coherent scheme requires no additional control fields, and can therefore form the basis for scalable quantum networks composed of passive quantum nodes that interact with each other only with single photon pulses. Here we present an analytical and numerical study of deterministic single-photon Raman passage, and characterise its limitations and the parameters for optimal operation. Specifically, we study the effect of losses and the presence of multiple excited state...

  7. A New Approach of Quantum Mechanics for Neutron Single-Slit Diffraction

    Institute of Scientific and Technical Information of China (English)

    WU Xiang-Yao; YANG Jing-Hai; LIU Xiao-Jing; WANG Li; LIU Bing; FAN Xi-Hui; GUO Yi-Qing

    2007-01-01

    Phenomena of electron, neutron, atomic and molecular diffraction have been studied in many experiments, and these experiments are explained by many theoretical works. We study neutron single-slit diffraction with a quantum mechanical approach. It is found that the obvious diffraction patterns can be obtained when the singleslit width a is in the range of 3λ~ 60λ. We also find a new quantum effect of the thickness of single-slit which can make a large impact on the diffraction pattern. The new quantum effect predicted in our work can be tested by the neutron single-slit diffraction experiment.

  8. Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

    DEFF Research Database (Denmark)

    Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

    2008-01-01

    Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality...... resonant tunneling diodes. A single photon detection efficiency of 2.1%+/- 0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust, and show promise for large absorption area single photon detectors based on quantum dot structures....

  9. Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

    Institute of Scientific and Technical Information of China (English)

    DOU Xiu-Ming; SUN Bao-Quan; CHANG Xiu-Ying; XIONG Yong-Hua; HUANG She-Song; NI Hai-Qiao; NIU Zhi-Chuan

    2008-01-01

    We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g(2)(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.

  10. Applications of single-qubit rotations in quantum public-key cryptography

    OpenAIRE

    Nikolopoulos, Georgios M.

    2008-01-01

    We discuss cryptographic applications of single-qubit rotations from the perspective of trapdoor one-way functions and public-key encryption. In particular, we present an asymmetric cryptosystem whose security relies on fundamental principles of quantum physics. A quantum public key is used for the encryption of messages while decryption is possible by means of a classical private key only. The trapdoor one-way function underlying the proposed cryptosystem maps integer numbers to quantum stat...

  11. Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

    Institute of Scientific and Technical Information of China (English)

    DOU Xiu-Ming; SUN Bao-Quan; XIONG Yong-Hua; HUANG She-Song; NI Hai-Qiao; NIU Zhi-Chuan

    2008-01-01

    We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift.We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra.It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.

  12. Adaptively measuring the temporal shape of ultrashort single photons for higher-dimensional quantum information processing

    CERN Document Server

    Polycarpou, Constantina; Venturi, Giovanni; Zavatta, Alessandro; Bellini, Marco

    2011-01-01

    A photon is the single excitation of a particular spatiotemporal mode of the electromagnetic field. A precise knowledge of the mode structure is therefore essential for its processing and detection, as well as for applying generic quantum light states to novel technologies. Here we demonstrate an adaptive scheme for reconstructing the arbitrary amplitude and phase spectro-temporal profile of an ultrashort single-photon pulse. The method combines techniques from the fields of ultrafast coherent control and quantum optics to map the mode of a fragile quantum state onto that of an intense coherent field. In addition, we show that the possibility of generating and detecting quantum states in multiple spectro-temporal modes may serve as a basis for encoding qubits (and qudits) into single, broadband, ultrashort, photons. Providing access to a much larger Hilbert space, this scheme may boost the capacity of current quantum information protocols.

  13. The Electron-Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

    Institute of Scientific and Technical Information of China (English)

    XIE Wen-Fang; ZHU Wu

    2003-01-01

    The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots arestudied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method ofnumerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the bindingenergy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupledquantum dot as a function of the dot radius for different values of the distance and the magnetic field strength.

  14. Single-Photon Technologies Based on Quantum-Dots in Photonic Crystals

    DEFF Research Database (Denmark)

    Lehmann, Tau Bernstorff

    In this thesis, the application of semiconductor quantum-dots in photonic crystals is explored as aresource for single-photon technology.Two platforms based on photonic crystals, a cavity and a waveguide, are examined as platformssingle-photon sources. Both platforms demonstrate strong single-photon...... purity under quasi-resonantexcitation. Furthermore the waveguide based platform demonstrates indistinguishable single-photonsat timescales up to 13 ns.A setup for active demultiplexing of single-photons to a three-fold single-photon state is proposed.Using a fast electro-optical modulator, single-photons...... from a quantum-dot are routed on timescalesof the exciton lifetime. Using active demultiplexing a three-fold single-photon state is generated at anextracted rate of 2:03 ±0:49 Hz.An on-chip power divider integrated with a quantum-dot is investigated. Correlation measurementof the photon statistic...

  15. Real single ion solvation free energies with quantum mechanical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Duignan, Timothy TS; Baer, Marcel D.; Schenter, Gregory K.; Mundy, Christopher J.

    2017-09-01

    Single ion solvation free energies are one of the most important properties of electrolyte solution and yet there is ongoing debate about what these values are. Experimental methods can only determine the values for neutral ion pairs. Here, we use DFT interaction potentials with molecular dynamics simulation (DFT-MD) combined with a modified version of the quasi chemical theory (QCT) to calculate these energies for the lithium and fluoride ions. A new method to rigorously correct for the error in the DFT functional is developed and very good agreement with the experimental value for the lithium fluoride pair is obtained. Moreover, this method partitions the energies into physically intuitive terms such as surface potential, cavity and charging energies which are amenable to descriptions with reduced models. Our research suggests that lithium’s solvation energy is dominated by the free energetics of a charged hard sphere, whereas fluoride exhibits significant quantum mechanical behavior that cannot be simply described with a reduced model. We would like to thank Thomas Beck, Shawn Kathmann and Sotiris Xantheas for helpful discussions. Computing resources were generously allocated by PNNLs Institutional Computing program. This research also used resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. TTD, GKS and CJM were supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences, and Biosciences. MDB was supported by MS3 (Materials Synthesis and Simulation Across Scales) Initiative, a Laboratory Directed Research and Development Program at Pacific Northwest National Laboratory (PNNL). PNNL is a multi-program national laboratory operated by Battelle for the U.S. Department of Energy.

  16. The Heteronuclear Single-Quantum Correlation (HSQC) Experiment: Vectors versus Product Operators

    Science.gov (United States)

    de la Vega-Herna´ndez, Karen; Antuch, Manuel

    2015-01-01

    A vectorial representation of the full sequence of events occurring during the 2D-NMR heteronuclear single-quantum correlation (HSQC) experiment is presented. The proposed vectorial representation conveys an understanding of the magnetization evolution during the HSQC pulse sequence for those who have little or no quantum mechanical background.…

  17. Interaction induced dephasing of excitons in wide ZnSe/ZnMgSe single quantum wells

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Schätz, A.; Maier, R.;

    1998-01-01

    The dephasing of excitons in wide ZnSe/Zn0.94Mg0.06Se single quantum wells (SQW) is investigated by spectrally resolved, time integrated four-wave mixing (FWM). Simultaneous excitation of Is center-of-mass quantized heavy-hole and light-hole excition states leads to pronounced quantum beats. Pola...

  18. QUANTUM CRYPTOGRAPHY SYSTEM WITH A SINGLE PHOTON SOURCE BASED ON THE SPONTANEOUS PARAMETRIC SCATTERING EFFECT

    Directory of Open Access Journals (Sweden)

    V. I. Egorov

    2012-01-01

    Full Text Available A scheme of a single photon source for quantum informatics applications based on the spontaneous parametric scattering effect is proposed and a quantum cryptography setup using it is presented. The system is compared to the alternative ones that operate with attenuated classic light.

  19. Faint laser pulses versus a single-photon source in free space quantum cryptography

    Science.gov (United States)

    Molotkov, S. N.; Potapova, T. A.

    2016-03-01

    In this letter we present estimates for the distance of secret key transmission through free space for three different protocols of quantum key distribution: for BB84 and phase time-coding protocols in the case of a strictly single-photon source, and for the relativistic quantum key distribution protocol in the case of faint laser pulses.

  20. Quantum dot-micropillars: a bright source of coherent single photons

    DEFF Research Database (Denmark)

    Unsleber, Sebastian; He, Yu-Ming; Maier, Sebastian

    2016-01-01

    We present the efficient generation of coherent single photons based on quantum dots in micropillars. We utilize a scalable lithography scheme leading to quantum dot-micropillar devices with 74% extraction efficiency. Via pulsed strict resonant pumping, we show an indistinguishability...... of consecutively emitted photons up to 98.5%....

  1. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    CERN Document Server

    Tang, Jian-Shun; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-01-01

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by Duan-Lukin-Cirac-Zoller protocol, many improved quantum-repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multi-photons (multi-photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with $1$, $20$ and $100$ narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scal...

  2. Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.

    Science.gov (United States)

    Ho, Cheng-Han; Lien, Der-Hsien; Chang, Hung-Chih; Lin, Chin-An; Kang, Chen-Fang; Hsing, Meng-Kai; Lai, Kun-Yu; He, Jr-Hau

    2012-12-07

    We experimentally and theoretically demonstrated the hierarchical structure of SiO(2) nanorod arrays/p-GaN microdomes as a light harvesting scheme for InGaN-based multiple quantum well solar cells. The combination of nano- and micro-structures leads to increased internal multiple reflection and provides an intermediate refractive index between air and GaN. Cells with the hierarchical structure exhibit improved short-circuit current densities and fill factors, rendering a 1.47 fold efficiency enhancement as compared to planar cells.

  3. A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

    CERN Document Server

    Davanco, Marcelo; Sapienza, Luca; Zhang, Chen-Zhao; Cardoso, Jose Vinicius De Miranda; Verma, Varun; Mirin, Richard; Nam, Sae Woo; Liu, Liu; Srinivasan, Kartik

    2016-01-01

    Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing d...

  4. Growth of InGaN and double heterojunction structure with InGaN back barrier

    Energy Technology Data Exchange (ETDEWEB)

    Shi Linyu; Zhang Jincheng; Wang Hao; Xue Junshuai; Ou Xinxiu; Fu Xiaofan; Chen Ke; Hao Yue, E-mail: sly_yolanda@163.com [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-12-15

    We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition (MOCVD). It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction. A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature. Due to the InGaN layer polarization field opposite to that in the AlGaN layer, an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices. The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6 {mu}A/mm at V{sub DS} = 10 V. (semiconductor materials)

  5. SEMICONDUCTOR MATERIALS Growth of InGaN and double heterojunction structure with InGaN back barrier

    Science.gov (United States)

    Linyu, Shi; Jincheng, Zhang; Hao, Wang; Junshuai, Xue; Xinxiu, Ou; Xiaofan, Fu; Ke, Chen; Yue, Hao

    2010-12-01

    We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition (MOCVD). It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction. A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature. Due to the InGaN layer polarization field opposite to that in the AlGaN layer, an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices. The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6 μA/mm at VDS = 10 V.

  6. Single-photon sources for quantum technologies - Results of the joint research project SIQUTE

    DEFF Research Database (Denmark)

    Kück, S.; López, M.; Rodiek, B.

    2017-01-01

    In this presentation, the results of the joint research project “Single-Photon Sources for Quantum Technologies” (SIQUTE) [1] will be presented. The focus will be on the development of absolutely characterized single-photon sources, on the realization of an efficient waveguide-based single-photon...

  7. Quantum teleportation of multiple degrees of freedom of a single photon

    Science.gov (United States)

    Wang, Xi-Lin; Cai, Xin-Dong; Su, Zu-En; Chen, Ming-Cheng; Wu, Dian; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

    2015-02-01

    Quantum teleportation provides a `disembodied' way to transfer quantum states from one object to another at a distant location, assisted by previously shared entangled states and a classical communication channel. As well as being of fundamental interest, teleportation has been recognized as an important element in long-distance quantum communication, distributed quantum networks and measurement-based quantum computation. There have been numerous demonstrations of teleportation in different physical systems such as photons, atoms, ions, electrons and superconducting circuits. All the previous experiments were limited to the teleportation of one degree of freedom only. However, a single quantum particle can naturally possess various degrees of freedom--internal and external--and with coherent coupling among them. A fundamental open challenge is to teleport multiple degrees of freedom simultaneously, which is necessary to describe a quantum particle fully and, therefore, to teleport it intact. Here we demonstrate quantum teleportation of the composite quantum states of a single photon encoded in both spin and orbital angular momentum. We use photon pairs entangled in both degrees of freedom (that is, hyper-entangled) as the quantum channel for teleportation, and develop a method to project and discriminate hyper-entangled Bell states by exploiting probabilistic quantum non-demolition measurement, which can be extended to more degrees of freedom. We verify the teleportation for both spin-orbit product states and hybrid entangled states, and achieve a teleportation fidelity ranging from 0.57 to 0.68, above the classical limit. Our work is a step towards the teleportation of more complex quantum systems, and demonstrates an increase in our technical control of scalable quantum technologies.

  8. Quantum cascade laser infrared spectroscopy of single cancer cells

    KAUST Repository

    Patel, Imran

    2017-03-27

    Quantum cascade laser infrared spectroscopy is a next generation novel imaging technique allowing high resolution spectral imaging of cells. We show after spectral pre-processing, identification of different cancer cell populations within minutes.

  9. Efficiency enhancement of InGaN amber MQWs using nanopillar structures

    KAUST Repository

    Ou, Yiyu

    2017-09-09

    We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

  10. Quantum ion-acoustic oscillations in single-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Khan, S.A. [Kyoto Univ., Katsura (Japan). Graduate School of Engineering; Quaid-i-Azam Univ., Islamabad (Pakistan). National Centre for Physics; Iqbal, Z. [University of Management and Technology, Sialkot (Pakistan); Wazir, Z. [Riphah International Univ., Islamabad (Pakistan). Dept. of Basic Sciences; Rehman, Aman ur [Pakistan Institute of Engineering and Applied Sciences (PIEAS), Islamabad (Pakistan)

    2016-08-01

    Quantum ion-acoustic oscillations in single-walled carbon nanotubes are studied by employing a quantum hydrodynamics model. The dispersion equation is obtained by Fourier transformation, which exhibits the existence of quantum ion-acoustic wave affected by change of density balance due to presence of positive or negative heavy species as stationary ion clusters and wave potential at equilibrium. The numerical results are presented, and the role of quantum degeneracy, nanotube geometry, electron exchange-correlation effects, and concentration and polarity of heavy species on wave dispersion is pointed out for typical systems of interest.

  11. Interference with a quantum dot single-photon source and a laser at telecom wavelength

    Energy Technology Data Exchange (ETDEWEB)

    Felle, M. [Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Centre for Advanced Photonics and Electronics, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Huwer, J., E-mail: jan.huwer@crl.toshiba.co.uk; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J. [Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Penty, R. V. [Centre for Advanced Photonics and Electronics, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0FA (United Kingdom)

    2015-09-28

    The interference of photons emitted by dissimilar sources is an essential requirement for a wide range of photonic quantum information applications. Many of these applications are in quantum communications and need to operate at standard telecommunication wavelengths to minimize the impact of photon losses and be compatible with existing infrastructure. Here, we demonstrate for the first time the quantum interference of telecom-wavelength photons from an InAs/GaAs quantum dot single-photon source and a laser; an important step towards such applications. The results are in good agreement with a theoretical model, indicating a high degree of indistinguishability for the interfering photons.

  12. Quantum resource theories in the single-shot regime

    Science.gov (United States)

    Gour, Gilad

    2017-06-01

    One of the main goals of any resource theory such as entanglement, quantum thermodynamics, quantum coherence, and asymmetry, is to find necessary and sufficient conditions that determine whether one resource can be converted to another by the set of free operations. Here we find such conditions for a large class of quantum resource theories which we call affine resource theories. Affine resource theories include the resource theories of athermality, asymmetry, and coherence, but not entanglement. Remarkably, the necessary and sufficient conditions can be expressed as a family of inequalities between resource monotones (quantifiers) that are given in terms of the conditional min-entropy. The set of free operations is taken to be (1) the maximal set (i.e., consists of all resource nongenerating quantum channels) or (2) the self-dual set of free operations (i.e., consists of all resource nongenerating maps for which the dual map is also resource nongenerating). As an example, we apply our results to quantum thermodynamics with Gibbs preserving operations, and several other affine resource theories. Finally, we discuss the applications of these results to resource theories that are not affine and, along the way, provide the necessary and sufficient conditions that a quantum resource theory consists of a resource destroying map.

  13. Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire

    DEFF Research Database (Denmark)

    Nguyen, H.A.; Grange, T.; Malik, N.S.

    2017-01-01

    Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.......Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons....

  14. Reach of Environmental Influences on the Indistinguishability of Single Photons from Quantum Dots

    CERN Document Server

    Huber, Tobias; Föger, Daniel; Solomon, Glenn; Weihs, Gregor

    2015-01-01

    In this letter, we present a detailed, all optical study of the influence of different excitation schemes on the indistinguishability of single photons from a single InAs quantum dot. For this study, we measure the Hong-Ou-Mandel interference of consecutive photons from the spontaneous emission of an InAs quantum dot state under various excitation schemes and different excitation conditions and give a comparison.

  15. On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

    Science.gov (United States)

    Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

    2017-08-30

    Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

  16. Vacuum Rabi splitting in a plasmonic cavity at the single quantum emitter limit

    CERN Document Server

    Santhosh, Kotni; Chuntonov, Lev; Haran, Gilad

    2015-01-01

    The strong interaction of individual quantum emitters with resonant cavities is of fundamental interest for understanding light matter interactions, as well as for quantum information processing and quantum communication applications. Plasmonic cavities hold the promise of attaining the strong coupling regime even under ambient conditions and within subdiffraction volumes. Recent experiments revealed strong coupling between individual plasmonic structures and multiple organic molecules, but so far strong coupling at the limit of a single quantum emitter has not been reported. Here we demonstrate vacuum Rabi splitting, a manifestation of strong coupling, using silver bowtie plasmonic cavities loaded with semiconductor quantum dots (QDs). A transparency dip is observed in the scattering spectra of individual bowties with one to a few QDs in their gaps. Rabi splitting values as high as 180 meV are registered with a single QD. These observations are verified by polarization-dependent experiments and validated by ...

  17. Controlled Remote Implementation of an Arbitrary Single-Qubit Operation with Partially Entangled Quantum Channel

    Science.gov (United States)

    Lin, Jun-You; He, Jun-Gang; Gao, Yan-Chun; Li, Xue-Mei; Zhou, Ping

    2017-04-01

    We present a scheme for controlled remote implementation of an arbitrary single-qubit operation by using partially entangled states as the quantum channel. The sender can remote implement an arbitrary single-qubit operation on the remote receiver's quantum system via partially entangled states under the controller's control. The success probability for controlled remote implementation of quantum operation can achieve 1 if the sender and the controller perform proper projective measurements on their entangled particles. Moreover, we also discuss the scheme for remote sharing the partially unknown operations via partially entangled quantum channel. It is shown that the quantum entanglement cost and classical communication can be reduced if the implemented operation belongs to the restrict sets.

  18. Quantum Router for Single Photons Carrying Spin and Orbital Angular Momentum

    Science.gov (United States)

    Chen, Yuanyuan; Jiang, Dong; Xie, Ling; Chen, Lijun

    2016-01-01

    Quantum router is an essential element in the quantum network. Here, we present a fully quantum router based on interaction free measurement and quantum dots. The signal photonic qubit can be routed to different output ports according to one control electronic qubit. Besides, our scheme is an interferometric method capable of routing single photons carrying either spin angular momentum (SAM) or orbital angular momentum (OAM), or simultaneously carrying SAM and OAM. Then we describe a cascaded multi-level quantum router to construct a one-to-many quantum router. Subsequently we analyze the success probability by using a tunable controlled phase gate. The implementation issues are also discussed to show that this scheme is feasible. PMID:27256772

  19. Quantum Router for Single Photons Carrying Spin and Orbital Angular Momentum.

    Science.gov (United States)

    Chen, Yuanyuan; Jiang, Dong; Xie, Ling; Chen, Lijun

    2016-06-03

    Quantum router is an essential element in the quantum network. Here, we present a fully quantum router based on interaction free measurement and quantum dots. The signal photonic qubit can be routed to different output ports according to one control electronic qubit. Besides, our scheme is an interferometric method capable of routing single photons carrying either spin angular momentum (SAM) or orbital angular momentum (OAM), or simultaneously carrying SAM and OAM. Then we describe a cascaded multi-level quantum router to construct a one-to-many quantum router. Subsequently we analyze the success probability by using a tunable controlled phase gate. The implementation issues are also discussed to show that this scheme is feasible.

  20. Quantum repeaters based on deterministic storage of a single photon in distant atomic ensembles

    Energy Technology Data Exchange (ETDEWEB)

    Aghamalyan, D. [Institute for Physical Research, Armenian National Academy of Sciences, Ashtarak-2 0203 (Armenia); Malakyan, Yu. [Institute for Physical Research, Armenian National Academy of Sciences, Ashtarak-2 0203 (Armenia); Centre of Strong Field Physics, Yerevan State University, 1 A. Manukian Street, Yerevan 0025 (Armenia)

    2011-10-15

    Quantum repeaters hold the promise to prevent the photon losses in communication channels. Most recently, the serious efforts have been applied to achieve scalable distribution of entanglement over long distances. However, the probabilistic nature of entanglement generation and realistic quantum memory storage times make the implementation of quantum repeaters an outstanding experimental challenge. We propose a quantum repeater protocol based on the deterministic storage of a single photon in atomic ensembles confined in distant high-finesse cavities and show that this system is capable of distributing the entanglement over long distances with a much higher rate as compared to previous protocols, thereby alleviating the limitations on the quantum memory lifetime by several orders of magnitude. Our scheme is robust with respect to phase fluctuations in the quantum channel, while the fidelity imperfection is fixed and negligibly small at each step of entanglement swapping.

  1. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

    Science.gov (United States)

    Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

    2017-07-24

    We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

  2. Quantum Phase Transition in Quasi-two-dimensional Heisenberg Antiferromagnet with Single-Ion Anisotropy

    Institute of Scientific and Technical Information of China (English)

    JI An-Chun; TIAN Guang-Shan

    2007-01-01

    In the present paper, we investigate the quantum phase transition in a spatially anisotropic antiferromagnetic Heisenberg model of S = 1 with single-ion energy anisotropy. By using the Schwinger boson representation, we calculate the Gaussian correction to the critical value Jc⊥ caused by quantum spin fluctuations. We find that, for the positive single-ion energy, a nonzero value of Jc⊥ is always needed to stabilize the antiferromagnetic long-range order in this model. It resolves a difference among literature and shows clearly that the effect of quantum fluctuations may qualitatively change a result obtained by the mean-field theories on lower-dimensional systems.

  3. A highly efficient single-photon source based on a quantum dot in a photonic nanowire

    DEFF Research Database (Denmark)

    Claudon, Julien; Bleuse, Joel; Malik, Nitin Singh

    2010-01-01

    The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication,optical quantum information processing and metrology1. Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond2...... with carefully tailored ends13. Under optical pumping, we demonstrate a record source efficiency of 0.72, combined with pure single-photon emission. This non-resonant approach also provides broadband spontaneous emission control, thus offering appealing novel opportunities for the development of single...

  4. Multi-Color Single Particle Tracking with Quantum Dots

    DEFF Research Database (Denmark)

    Christensen, Eva Arnspang; Brewer, J. R.; Lagerholm, B. C.

    2012-01-01

    . multiplex single molecule sensitivity applications such as single particle tracking (SPT). In order to fully optimize single molecule multiplex application with QDs, we have in this work performed a comprehensive quantitative investigation of the fluorescence intensities, fluorescence intensity fluctuations...

  5. Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

    Directory of Open Access Journals (Sweden)

    James (Zi-Jian Ju

    2016-04-01

    Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

  6. Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot.

    Science.gov (United States)

    Makarovsky, O; Vdovin, E E; Patané, A; Eaves, L; Makhonin, M N; Tartakovskii, A I; Hopkinson, M

    2012-03-16

    We use a femtowatt focused laser beam to locate and manipulate a single quantum tunneling channel associated with an individual InAs quantum dot within an ensemble of dots. The intensity of the directed laser beam tunes the tunneling current through the targeted dot with an effective optical gain of 10(7) and modifies the curvature of the dot's confining potential and the spatial extent of its ground state electron eigenfunction. These observations are explained by the effect of photocreated hole charges which become bound close to the targeted dot, thus acting as an optically induced gate electrode.

  7. Single-hidden-layer feed-forward quantum neural network based on Grover learning.

    Science.gov (United States)

    Liu, Cheng-Yi; Chen, Chein; Chang, Ching-Ter; Shih, Lun-Min

    2013-09-01

    In this paper, a novel single-hidden-layer feed-forward quantum neural network model is proposed based on some concepts and principles in the quantum theory. By combining the quantum mechanism with the feed-forward neural network, we defined quantum hidden neurons and connected quantum weights, and used them as the fundamental information processing unit in a single-hidden-layer feed-forward neural network. The quantum neurons make a wide range of nonlinear functions serve as the activation functions in the hidden layer of the network, and the Grover searching algorithm outstands the optimal parameter setting iteratively and thus makes very efficient neural network learning possible. The quantum neuron and weights, along with a Grover searching algorithm based learning, result in a novel and efficient neural network characteristic of reduced network, high efficient training and prospect application in future. Some simulations are taken to investigate the performance of the proposed quantum network and the result show that it can achieve accurate learning.

  8. Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

    Institute of Scientific and Technical Information of China (English)

    HUANG Shao-Hua; CHEN Zhang-Hai; BAI Li-Hui; SHEN Xue-Chu; H. H. Tan; L. Fu; M. Fraser; C. Jagadish

    2006-01-01

    We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of realwires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures.All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of realquantum wires.

  9. Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity

    Science.gov (United States)

    Yoshie, T.; Scherer, A.; Hendrickson, J.; Khitrova, G.; Gibbs, H. M.; Rupper, G.; Ell, C.; Shchekin, O. B.; Deppe, D. G.

    2004-11-01

    Cavity quantum electrodynamics (QED) systems allow the study of a variety of fundamental quantum-optics phenomena, such as entanglement, quantum decoherence and the quantum-classical boundary. Such systems also provide test beds for quantum information science. Nearly all strongly coupled cavity QED experiments have used a single atom in a high-quality-factor (high-Q) cavity. Here we report the experimental realization of a strongly coupled system in the solid state: a single quantum dot embedded in the spacer of a nanocavity, showing vacuum-field Rabi splitting exceeding the decoherence linewidths of both the nanocavity and the quantum dot. This requires a small-volume cavity and an atomic-like two-level system. The photonic crystal slab nanocavity-which traps photons when a defect is introduced inside the two-dimensional photonic bandgap by leaving out one or more holes-has both high Q and small modal volume V, as required for strong light-matter interactions. The quantum dot has two discrete energy levels with a transition dipole moment much larger than that of an atom, and it is fixed in the nanocavity during growth.

  10. Efficient single-photon source based on a deterministically fabricated single quantum dot - microstructure with backside gold mirror

    Science.gov (United States)

    Fischbach, Sarah; Kaganskiy, Arsenty; Tauscher, Esra Burcu Yarar; Gericke, Fabian; Thoma, Alexander; Schmidt, Ronny; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Reitzenstein, Stephan

    2017-07-01

    We present an efficient broadband single-photon source which is fabricated by a flip-chip gold-bonding technique and in-situ electron beam lithography. The device comprises a single InGaAs quantum dot that is centered at the bottom of a monolithic mesa structure and located above a gold mirror for enhanced photon-extraction efficiency. We show a photon-extraction efficiency of ηex t=(18 ±2 ) % into a numerical aperture of 0.4 and a high suppression of multi-photon events from this source with g(2 )(0 )=0.015 ±0.009 . Our deterministic device with a backside gold mirror can be combined with electrical contacts and piezo-tuning capabilities in future refinements, which represents an important step towards a spectrally tunable plug-and-play quantum-light source with broadband enhancement for photonic quantum networks.

  11. A quantum phase switch between a single solid-state spin and a photon

    Science.gov (United States)

    Sun, Shuo; Kim, Hyochul; Solomon, Glenn S.; Waks, Edo

    2016-06-01

    Interactions between single spins and photons are essential for quantum networks and distributed quantum computation. Achieving spin-photon interactions in a solid-state device could enable compact chip-integrated quantum circuits operating at gigahertz bandwidths. Many theoretical works have suggested using spins embedded in nanophotonic structures to attain this high-speed interface. These proposals implement a quantum switch where the spin flips the state of the photon and a photon flips the spin state. However, such a switch has not yet been realized using a solid-state spin system. Here, we report an experimental realization of a spin-photon quantum switch using a single solid-state spin embedded in a nanophotonic cavity. We show that the spin state strongly modulates the polarization of a reflected photon, and a single reflected photon coherently rotates the spin state. These strong spin-photon interactions open up a promising direction for solid-state implementations of high-speed quantum networks and on-chip quantum information processors using nanophotonic devices.

  12. An integrated quantum repeater at telecom wavelength with single atoms in optical fiber cavities

    Science.gov (United States)

    Uphoff, Manuel; Brekenfeld, Manuel; Rempe, Gerhard; Ritter, Stephan

    2016-03-01

    Quantum repeaters promise to enable quantum networks over global distances by circumventing the exponential decrease in success probability inherent in direct photon transmission. We propose a realistic, functionally integrated quantum-repeater implementation based on single atoms in optical cavities. Entanglement is directly generated between the single-atom quantum memory and a photon at telecom wavelength. The latter is collected with high efficiency and adjustable temporal and spectral properties into a spatially well-defined cavity mode. It is heralded by a near-infrared photon emitted from a second, orthogonal cavity. Entanglement between two remote quantum memories can be generated via an optical Bell-state measurement, while we propose entanglement swapping based on a highly efficient, cavity-assisted atom-atom gate. Our quantum-repeater scheme eliminates any requirement for wavelength conversion such that only a single system is needed at each node. We investigate a particular implementation with rubidium and realistic parameters for Fabry-Perot cavities based on hbox {CO}_2 laser-machined optical fibers. We show that the scheme enables the implementation of a rather simple quantum repeater that outperforms direct entanglement generation over large distances and does not require any improvements in technology beyond the state of the art.

  13. A quantum phase switch between a single solid-state spin and a photon.

    Science.gov (United States)

    Sun, Shuo; Kim, Hyochul; Solomon, Glenn S; Waks, Edo

    2016-06-01

    Interactions between single spins and photons are essential for quantum networks and distributed quantum computation. Achieving spin-photon interactions in a solid-state device could enable compact chip-integrated quantum circuits operating at gigahertz bandwidths. Many theoretical works have suggested using spins embedded in nanophotonic structures to attain this high-speed interface. These proposals implement a quantum switch where the spin flips the state of the photon and a photon flips the spin state. However, such a switch has not yet been realized using a solid-state spin system. Here, we report an experimental realization of a spin-photon quantum switch using a single solid-state spin embedded in a nanophotonic cavity. We show that the spin state strongly modulates the polarization of a reflected photon, and a single reflected photon coherently rotates the spin state. These strong spin-photon interactions open up a promising direction for solid-state implementations of high-speed quantum networks and on-chip quantum information processors using nanophotonic devices.

  14. Quantum interference between two single photons emitted by independently trapped atoms.

    Science.gov (United States)

    Beugnon, J; Jones, M P A; Dingjan, J; Darquié, B; Messin, G; Browaeys, A; Grangier, P

    2006-04-06

    When two indistinguishable single photons are fed into the two input ports of a beam splitter, the photons will coalesce and leave together from the same output port. This is a quantum interference effect, which occurs because two possible paths-in which the photons leave by different output ports-interfere destructively. This effect was first observed in parametric downconversion (in which a nonlinear crystal splits a single photon into two photons of lower energy), then from two separate downconversion crystals, as well as with single photons produced one after the other by the same quantum emitter. With the recent developments in quantum information research, much attention has been devoted to this interference effect as a resource for quantum data processing using linear optics techniques. To ensure the scalability of schemes based on these ideas, it is crucial that indistinguishable photons are emitted by a collection of synchronized, but otherwise independent sources. Here we demonstrate the quantum interference of two single photons emitted by two independently trapped single atoms, bridging the gap towards the simultaneous emission of many indistinguishable single photons by different emitters. Our data analysis shows that the observed coalescence is mainly limited by wavefront matching of the light emitted by the two atoms, and to a lesser extent by the motion of each atom in its own trap.

  15. Single-shot read-out of an individual electron spin in a quantum dot.

    Science.gov (United States)

    Elzerman, J M; Hanson, R; Willems Van Beveren, L H; Witkamp, B; Vandersypen, L M K; Kouwenhoven, L P

    2004-07-22

    Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel or anti-parallel to the field. This discreteness reflects the quantum mechanical nature of spin. Ensembles of many spins have found diverse applications ranging from magnetic resonance imaging to magneto-electronic devices, while individual spins are considered as carriers for quantum information. Read-out of single spin states has been achieved using optical techniques, and is within reach of magnetic resonance force microscopy. However, electrical read-out of single spins has so far remained elusive. Here we demonstrate electrical single-shot measurement of the state of an individual electron spin in a semiconductor quantum dot. We use spin-to-charge conversion of a single electron confined in the dot, and detect the single-electron charge using a quantum point contact; the spin measurement visibility is approximately 65%. Furthermore, we observe very long single-spin energy relaxation times (up to approximately 0.85 ms at a magnetic field of 8 T), which are encouraging for the use of electron spins as carriers of quantum information.

  16. Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

    Science.gov (United States)

    Lazić, Snežana; Chernysheva, Ekaterina; Gačević, Žarko; García-Lepetit, Noemi; van der Meulen, Herko P.; Müller, Marcus; Bertram, Frank; Veit, Peter; Christen, Jürgen; Torres-Pardo, Almudena; González Calbet, José M.; Calleja, Enrique; Calleja, José M.

    2015-03-01

    The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nanodisks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.

  17. Quantum optical properties of a single Inx Ga1-x As-GaAs quantum dot two-level system

    Science.gov (United States)

    Stufler, S.; Ester, P.; Zrenner, A.; Bichler, M.

    2005-09-01

    We report on a two-level system, defined by the ground-state exciton of a single InGaAs/GaAs quantum dot. Saturation spectroscopy combined with ultrahigh spectral resolution gives us a complete description of the system in the steady-state limit. Rabi oscillations and quantum interference experiments, on the other hand, provide a detailed insight into the coherent high excitation regime. All fundamental properties of the two-level system show an excellent quantitative agreement in both domains, even though obtained under entirely different experimental conditions. We thus are able to demonstrate control over an almost ideal two-level system, suitable for possible applications in quantum information processing.

  18. MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性%Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE

    Institute of Scientific and Technical Information of China (English)

    王玥; 施卫; 苑进社; 贺训军; 胡辉; 姬广举

    2007-01-01

    Gallium nitride and its ternary alloys have been attracting much attention because of their unique physical and chemical properties and their great potentialities for semiconductor industrial applications, such as light emitting diodes(LEDs), laser diodes(LDs) operating from green to ultraviolet(UV), UV-detectors and microwave power devices. The primary object of this study is to investigate the influence of different thickness of Fixed-Indium-Content InGaN layer on the shift of the photoluminescence(PL) spectra and optical absorption of the whole system structure. Photoluminescence(PL) and absorption properties of the Fixed-Indium-Content InGaN/GaN heterojunction single quantum well (SQW) structures have been investigated using photoluminescence spectrum and ultraviolet-vi-sible spectrophotometer at room temperature, respectively. The films were grown by metal-organic vapor phase epitaxy (MOVPE), using GaN buffer layer on sapphire substrates. The width of InGaN layer (<3 nm) in the SQW was varied while keeping other growth parameters fixed. Sample A has an InGaN active layer of thickness 1.5 nm, and Sample B has an InGaN active layer of thickness 2.5 nm. Two samples were capped with a 25 nm GaN layer. PL measurements show that the PL peak position (432 nm in Sample A and 465 nm in Sample B) was redshifted by 33 nm, the intensity was reduced about 8%, and the full width at half maximum (FWHM) of PL spectrum increases with increasing (1 nm) of the potential well layer width. The spectra of transmission and reflection show that transmission T is very high there can be only few reflection R as no absorption R+T exceeds 100% in the near infrared ranges for the sample with InGaN layer of thickness 1.5 nm. The reasons of these results are discussed. The significance of these studies is multifold and these results provide further information of importance toward the design optimization of optoelectronic devices employing the Ⅲ-nitrides.%研究了用金属有机物气

  19. Photoluminescence Intermittency from Single Quantum Dots to Organic Molecules: Emerging Themes

    Science.gov (United States)

    Riley, Erin A.; Hess, Chelsea M.; Reid, Philip J.

    2012-01-01

    Recent experimental and theoretical studies of photoluminescence intermittency (PI) or “blinking” exhibited by single core/shell quantum dots and single organic luminophores are reviewed. For quantum dots, a discussion of early models describing the origin of PI in these materials and recent challenges to these models are presented. For organic luminophores the role of electron transfer, proton transfer and other photophysical processes in PI are discussed. Finally, new experimental and data analysis methods are outlined that promise to be instrumental in future discoveries regarding the origin(s) of PI exhibited by single emitters. PMID:23202909

  20. Quantum information-holding single-photon router based on spontaneous emission

    Science.gov (United States)

    Yan, GuoAn; Qiao, HaoXue; Lu, Hua; Chen, AiXi

    2017-09-01

    In this paper, we propose a single-photon router via the use of a four-level atom system coupled with two one-dimensional coupled-resonator waveguides. A single photon can be directed from one quantum channel into another by atomic spontaneous emission. The coherent resonance and the photonic bound states lead to the perfect reflection appearing in the incident channel. The fidelity of the atom is related to the magnitude of the coupling strength and can reach unit when the coupling strength matches g a = g b . This shows that the transfer of a single photon into another quantum channel has no influence on the fidelity at special points.

  1. Modulation of single quantum dot energy levels by a surface-acoustic-wave

    Science.gov (United States)

    Gell, J. R.; Ward, M. B.; Young, R. J.; Stevenson, R. M.; Atkinson, P.; Anderson, D.; Jones, G. A. C.; Ritchie, D. A.; Shields, A. J.

    2008-08-01

    This letter presents an experimental investigation into the effect of a surface-acoustic-wave (SAW) on the emission of a single InAs quantum dot. The SAW causes the energy of the transitions within the dot to oscillate at the frequency of the SAW, producing a characteristic broadening of the emission lines in their time-averaged spectra. This periodic tuning of the transition energy is used as a method to regulate the output of a device containing a single quantum dot and we study the system as a high-frequency periodic source of single photons.

  2. Very Efficient Single-Photon Sources Based on Quantum Dots in Photonic Wires

    DEFF Research Database (Denmark)

    Gerard, Jean-Michel; Claudon, Julien; Bleuse, Joel

    2014-01-01

    We review the recent development of high efficiency single photon sources based on a single quantum dot in a photonic wire. Unlike cavity-based devices, very pure single photon emission and efficiencies exceeding 0.7 photon per pulse are jointly demonstrated under non-resonant pumping conditions....... By placing a tip-shaped or trumpet-like tapering at the output end of the wire, a highly directional Gaussian far-field emission pattern is obtained. More generally, a photonic wire containing a quantum dot appears as an attractive template to explore and exploit in a solid-state system the unique optical...

  3. Nanoassemblies Based on Semiconductor Quantum Dots and Dye Molecules:. Single Objects Detection and Related Interface Dynamics

    Science.gov (United States)

    Zenkevich, E.; von Borczyskowski, C.; Kowerko, D.

    2013-05-01

    Single molecule spectroscopy of QD-dye nanoassemblies is shown that single functionalized dye molecules (perylene-bisimides and meso-pyridyl porphyrins) can be considered as extremely sensitive probes for studying exciton and relaxation processes in semiconductor CdSe/ZnS quantum dots.

  4. Frequency Stabilization of a Single Mode Terahertz Quantum Cascade Laser to the Kilohertz Level

    Science.gov (United States)

    2009-04-27

    Frequency stabilization of a single mode terahertz quantum cascade laser to the kilohertz level 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...primarily in a single-longitudinal mode (SLM) up to a bias voltage of 3.7 V and a multi-lodgitudinal mode ( MLM ) at higher voltages. It was mounted in a

  5. Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

    Science.gov (United States)

    Nurmikko, Arto V.; Dang, Cuong

    2016-06-21

    The methods and materials described herein contemplate the use films of colloidal quantum dots as a gain medium in a vertical-cavity surface-emitting laser. The present disclosure demonstrates a laser with single-exciton gain in the red, green, and blue wavelengths. Leveraging this nanocomposite gain, the results realize a significant step toward full-color single-material lasers.

  6. Simulation of a quantum NOT gate for a single qutrit system

    Indian Academy of Sciences (India)

    Avila M; Rueda-Paz J

    2016-04-01

    A three-level system based an a three-level atom interacting with a detuned cavity is considered. Because of the fact that the three-level atom defines a total normalized state composed of superposition of three different single-level states, it is assumed that such a system implements a qutrit. In order to achieve a quantum NOT gate for a single qutrit, the respective Schrödinger equation is solved numerically within a two-photon rotating wave approximation. For small values of one-photon detuning, there appear decoherence effects. Meanwhile, for large values of onephoton detuning, an ideal quantum NOT gate for a single qutrit is achieved. An expression for the execution time of the quantum NOT gate for a single qutrit as a function of the one-photon detuning is found.

  7. No-go theorem for passive single-rail linear optical quantum computing.

    Science.gov (United States)

    Wu, Lian-Ao; Walther, Philip; Lidar, Daniel A

    2013-01-01

    Photonic quantum systems are among the most promising architectures for quantum computers. It is well known that for dual-rail photons effective non-linearities and near-deterministic non-trivial two-qubit gates can be achieved via the measurement process and by introducing ancillary photons. While in principle this opens a legitimate path to scalable linear optical quantum computing, the technical requirements are still very challenging and thus other optical encodings are being actively investigated. One of the alternatives is to use single-rail encoded photons, where entangled states can be deterministically generated. Here we prove that even for such systems universal optical quantum computing using only passive optical elements such as beam splitters and phase shifters is not possible. This no-go theorem proves that photon bunching cannot be passively suppressed even when extra ancilla modes and arbitrary number of photons are used. Our result provides useful guidance for the design of optical quantum computers.

  8. Simulating and Optimising Quantum Thermometry Using Single Photons

    CERN Document Server

    Tham, W K; Sadashivan, A V; Steinberg, A M

    2016-01-01

    A classical thermometer typically works by exchanging energy with the system being measured until it comes to equilibrium, at which point the readout is related to the final energy state of the thermometer. A recent paper noted that different-temperature baths lead not only to different equilibrium states but also to different equilibration rates. In some cases this means that temperature discrimination is better achieved by comparing the rates than the asymptotic states -- and should therefore be carried out at finite times rather than once equilibration is essentially complete. The theory work also noted that for a \\emph{quantum} thermometer, the difference between the relaxation rates for populations and coherences means that for intermediate time regimes (before full equilibration but after some characteristic time that depends on the temperatures of the baths), optimal discrimination is achieved not by probing energy only but by using quantum coherence as well. In this work, we study these effects experi...

  9. Single-Particle Quantum Dynamics in a Magnetic Lattice

    Energy Technology Data Exchange (ETDEWEB)

    Venturini, Marco

    2001-02-01

    We study the quantum dynamics of a spinless charged-particle propagating through a magnetic lattice in a transport line or storage ring. Starting from the Klein-Gordon equation and by applying the paraxial approximation, we derive a Schroedinger-like equation for the betatron motion. A suitable unitary transformation reduces the problem to that of a simple harmonic oscillator. As a result we are able to find an explicit expression for the particle wavefunction.

  10. Simultaneous SU(2) rotations on multiple quantum dot exciton qubits using a single shaped pulse

    Science.gov (United States)

    Mathew, Reuble; Yang, Hong Yi Shi; Hall, Kimberley C.

    2015-10-01

    Recent experimental demonstration of a parallel (π ,2 π ) single qubit rotation on excitons in two distant quantum dots [Nano Lett. 13, 4666 (2013), 10.1021/nl4018176] is extended in numerical simulations to the design of pulses for more general quantum state control, demonstrating the feasibility of full SU(2) rotations of each exciton qubit. Our results show that simultaneous high-fidelity quantum control is achievable within the experimentally accessible parameter space for commercial Fourier-domain pulse shaping systems. The identification of a threshold of distinguishability for the two quantum dots (QDs) for achieving high-fidelity parallel rotations, corresponding to a difference in transition energies of ˜0.25 meV , points to the possibility of controlling more than 10 QDs with a single shaped optical pulse.

  11. Site-resolved imaging of single atoms with a Faraday quantum gas microscope

    CERN Document Server

    Yamamoto, Ryuta; Kato, Kohei; Kuno, Takuma; Sakura, Yuto; Takahashi, Yoshiro

    2016-01-01

    We successfully demonstrate a quantum gas microscopy using the Faraday effect which has an inherently non-destructive nature. The observed Faraday rotation angle reaches 3.0(2) degrees for a single atom. We reveal the non-destructive feature of this Faraday imaging method by comparing the detuning dependence of the Faraday signal strength with that of the photon scattering rate. We determine the atom distribution with deconvolution analysis. We also demonstrate the absorption and the dark field Faraday imaging, and reveal the different shapes of the point spread functions for these methods, which are fully explained by theoretical analysis. Our result is an important first step towards an ultimate quantum non-demolition site-resolved imaging and furthermore opens up the possibilities for quantum feedback control of a quantum many-body system with a single-site resolution.

  12. Comparison of coherently coupled multi-cavity and quantum dot embedded single cavity systems.

    Science.gov (United States)

    Kocaman, Serdar; Sayan, Gönül Turhan

    2016-12-12

    Temporal group delays originating from the optical analogue to electromagnetically induced transparency (EIT) are compared in two systems. Similar transmission characteristics are observed between a coherently coupled high-Q multi-cavity array and a single quantum dot (QD) embedded cavity in the weak coupling regime. However, theoretically generated group delay values for the multi-cavity case are around two times higher. Both configurations allow direct scalability for chip-scale optical pulse trapping and coupled-cavity quantum electrodynamics (QED).

  13. Compact transmission system using single-sideband modulation of light for quantum cryptography.

    Science.gov (United States)

    Duraffourg, L; Merolla, J M; Goedgebuer, J P; Mazurenko, Y; Rhodes, W T

    2001-09-15

    We report a new transmission that can be used for quantum key distribution. The system uses single-sideband-modulated light in an implementation of the BB84 quantum cryptography protocol. The system is formed by two integrated unbalanced Mach-Zehnder interferometers and is based on interference between phase-modulated sidebands in the spectral domain. Experiments show that high interference visibility can be obtained.

  14. Quantum-Dot Single-Photon Sources for Entanglement Enhanced Interferometry

    Science.gov (United States)

    Müller, M.; Vural, H.; Schneider, C.; Rastelli, A.; Schmidt, O. G.; Höfling, S.; Michler, P.

    2017-06-01

    Multiphoton entangled states such as "N00N states" have attracted a lot of attention because of their possible application in high-precision, quantum enhanced phase determination. So far, N00N states have been generated in spontaneous parametric down-conversion processes and by mixing quantum and classical light on a beam splitter. Here, in contrast, we demonstrate superresolving phase measurements based on two-photon N00N states generated by quantum dot single-photon sources making use of the Hong-Ou-Mandel effect on a beam splitter. By means of pulsed resonance fluorescence of a charged exciton state, we achieve, in postselection, a quantum enhanced improvement of the precision in phase uncertainty, higher than prescribed by the standard quantum limit. An analytical description of the measurement scheme is provided, reflecting requirements, capability, and restraints of single-photon emitters in optical quantum metrology. Our results point toward the realization of a real-world quantum sensor in the near future.

  15. Quantum-Dot Single-Photon Sources for Entanglement Enhanced Interferometry.

    Science.gov (United States)

    Müller, M; Vural, H; Schneider, C; Rastelli, A; Schmidt, O G; Höfling, S; Michler, P

    2017-06-23

    Multiphoton entangled states such as "N00N states" have attracted a lot of attention because of their possible application in high-precision, quantum enhanced phase determination. So far, N00N states have been generated in spontaneous parametric down-conversion processes and by mixing quantum and classical light on a beam splitter. Here, in contrast, we demonstrate superresolving phase measurements based on two-photon N00N states generated by quantum dot single-photon sources making use of the Hong-Ou-Mandel effect on a beam splitter. By means of pulsed resonance fluorescence of a charged exciton state, we achieve, in postselection, a quantum enhanced improvement of the precision in phase uncertainty, higher than prescribed by the standard quantum limit. An analytical description of the measurement scheme is provided, reflecting requirements, capability, and restraints of single-photon emitters in optical quantum metrology. Our results point toward the realization of a real-world quantum sensor in the near future.

  16. Applications of single-qubit rotations in quantum public-key cryptography

    Science.gov (United States)

    Nikolopoulos, Georgios M.

    2008-03-01

    We discuss cryptographic applications of single-qubit rotations from the perspective of trapdoor one-way functions and public-key encryption. In particular, we present an asymmetric cryptosystem whose security relies on fundamental principles of quantum physics. A quantum public key is used for the encryption of messages while decryption is possible by means of a classical private key only. The trapdoor one-way function underlying the proposed cryptosystem maps integer numbers to quantum states of a qubit and its inversion can be infeasible by virtue of the Holevo’s theorem.

  17. Nonpeturbative cavity-QED between a single quantum dot and a metal nanoparticle

    DEFF Research Database (Denmark)

    Van Vlack, C.; Kristensen, Philip Trøst; Hughes, S.

    2012-01-01

    We investigate the quantum optical properties of an excited single photon emitter (quantum dot) near the surface of a finite-size metal nanoparticle using a photon Green function technique that rigorously quantizes the electromagnetic fields. We obtain Purcell factors of up to 5 × 104 due to higher......|max/ωd = 1.28 × 10-2. Considering a small quantum-dot, positioned 2-nm from the metal nanoparticle surface, we demonstrate that the strong coupling regime should be observable in the far-field spontaneous emission spectrum, even at room temperature and despite the non-propagating nature of the higher order...

  18. Single photo-electron trapping, storage, and detection in a one-electron quantum dot

    OpenAIRE

    Rao, Deepak Sethu; Szkopek, Thomas; Robinson, Hans Daniel; Yablonovitch, Eli; Jiang, Hong-Wen

    2004-01-01

    There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a ...

  19. Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot

    Directory of Open Access Journals (Sweden)

    Moskalenko ES

    2010-01-01

    Full Text Available Abstract Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.

  20. A single-electron probe for buried optically active quantum dot

    Directory of Open Access Journals (Sweden)

    T. Nakaoka

    2012-09-01

    Full Text Available We present a simple method that enables both single electron transport through a self-assembled quantum dot and photon emission from the dot. The quantum dot buried in a semiconductor matrix is electrically connected with nanogap electrodes through tunneling junctions formed by a localized diffusion of the nanogap electrode metals. Coulomb blockade stability diagrams for the optically-active dot are clearly resolved at 4.2 K. The position of the quantum dot energy levels with respect to the contact Fermi level is controlled by the kind of metal atoms diffused from the nanogap electrodes.

  1. The remote implementation of all possible generalized quantum measurements on a single atomic qubit in a quantum network

    Institute of Scientific and Technical Information of China (English)

    Han Yang; Wu Chun-Wang; Wu Wei; Chen Ping-Xing; Li Cheng-Zu

    2009-01-01

    To implement generalized quantum measurement (GQM) one has to extend the original Hilbert space.Generally speaking,the additional dimensions of the ancilla space increase as the number of the operators of the CQM n increases.This paper presents a scheme for deterministically implementing all possible n-operator GQMs on a single atomic qubit by using only one 2-dimensional ancillary atomic qubit repeatedly,which remarkably reduces the complexity of the realistic physical system.Here the qubit is encoded in the internal states of an atom trapped in an optical cavity and single-photon pulses are employed to provide the interaction between qublts.It shows that the scheme can be performed remotely,and thus it is suitable for implementing GQM in a quantum network.What is more,the number of the total ancilla dimensions in our scheme achieves the theoretic low bound.

  2. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    Science.gov (United States)

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-05

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  3. Plasmonic Effect on Exciton and Multiexciton Emission of Single Quantum Dots.

    Science.gov (United States)

    Dey, Swayandipta; Zhao, Jing

    2016-08-04

    Quantum dots are nanoscale quantum emitters with high quantum yield and size-dependent emission wavelength, holding promises in many optical and electronic applications. When quantum dots are situated close to noble metal nanoparticles, their emitting behavior can be conveniently tuned because of the interaction between the excitons of the quantum dots and the plasmons of the metal nanoparticles. This interaction at the single quantum dot level gives rise to reduced or suppressed photoluminescence blinking and enhanced multiexciton emission, which is difficult to achieve in isolated quantum dots. However, the mechanism of how plasmonic structures cause the changes in the quantum dot emission remains unclear. Because of the complexity of the system, the interfaces between metal, semiconductor, and ligands must be considered, in addition to factors such as geometry, interparticle distance, and spectral overlap. The challenges in the design and fabrication of the hybrid nanostructures as well as in understanding the exciton-plasmon coupling mechanism can be overcome by a cooperative effort in synthesis, optical spectroscopy, and theoretical modeling.

  4. Single-particle and collective excitations in quantum wires made up of vertically stacked quantum dots: zero magnetic field.

    Science.gov (United States)

    Kushwaha, Manvir S

    2011-09-28

    We report on the theoretical investigation of the elementary electronic excitations in a quantum wire made up of vertically stacked self-assembled InAs/GaAs quantum dots. The length scales (of a few nanometers) involved in the experimental setups prompt us to consider an infinitely periodic system of two-dimensionally confined (InAs) quantum dot layers separated by GaAs spacers. The resultant quantum wire is characterized by a two-dimensional harmonic confining potential in the x-y plane and a periodic (Kronig-Penney) potential along the z (or the growth) direction within the tight-binding approximation. Since the wells and barriers are formed from two different materials, we employ the Bastard's boundary conditions in order to determine the eigenfunctions along the z direction. These wave functions are then used to generate the Wannier functions, which, in turn, constitute the legitimate Bloch functions that govern the electron dynamics along the direction of periodicity. Thus, the Bloch functions and the Hermite functions together characterize the whole system. We then make use of the Bohm-Pines' (full) random-phase approximation in order to derive a general nonlocal, dynamic dielectric function. Thus, developed theoretical framework is then specified to work within a (lowest miniband and) two-subband model that enables us to scrutinize the single-particle as well as collective responses of the system. We compute and discuss the behavior of the eigenfunctions, band-widths, density of states, Fermi energy, single-particle and collective excitations, and finally size up the importance of studying the inverse dielectric function in relation with the quantum transport phenomena. It is remarkable to notice how the variation in the barrier- and well-widths can allow us to tailor the excitation spectrum in the desired energy range. Given the advantage of the vertically stacked quantum dots over the planar ones and the foreseen applications in the single-electron devices

  5. Design and Simulation of InGaN p-n Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    A. Mesrane

    2015-01-01

    Full Text Available The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work is to design and simulate the optimal InGaN single-junction solar cell. For more accurate results and best configuration, the optical properties and the physical models such as the Fermi-Dirac statistics, Auger and Shockley-Read-Hall recombination, and the doping and temperature-dependent mobility model were taken into account in simulations. The single-junction In0.622Ga0.378N (Eg = 1.39 eV solar cell is the optimal structure found. It exhibits, under normalized conditions (AM1.5G, 0.1 W/cm2, and 300 K, the following electrical parameters: Jsc=32.6791 mA/cm2, Voc=0.94091 volts, FF = 86.2343%, and η=26.5056%. It was noticed that the minority carrier lifetime and the surface recombination velocity have an important effect on the solar cell performance. Furthermore, the investigation results show that the In0.622Ga0.378N solar cell efficiency was inversely proportional with the temperature.

  6. Relative Intensity Noise in the Single Quantum Well Diode

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Based on the mathematical model of quantum well laser diode(QW-LDs) developed, the paper presents a relative intensity noise(RIN) model, which employs Gaussian form random noise with its average being to zero. It can be straightforwardly used to describe the effect of the noise on the performance of QW-LDs. The RIN becomes notable in the frequency range of interests and therefore affects the device modulation property. The results are in good agreement of the published data. The RIN model proposed and the results can be used for purpose of device technique improvement and performance simulation of optical communication systems and networks.

  7. A high-temperature single-photon source from nanowire quantum dots.

    Science.gov (United States)

    Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, Régis; Poizat, Jean-Philippe; Bougerol, Catherine; Tatarenko, Serge; Kheng, Kuntheak

    2008-12-01

    We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.

  8. Quantum computation with prethreshold superconducting qubits: Single-excitation subspace approach

    CERN Document Server

    Galiautdinov, Andrei

    2011-01-01

    We describe an alternative approach to quantum computation that is ideally suited for today's sub-threshold-fidelity qubits, and which can be applied to a family of hardware models that includes superconducting qubits with tunable coupling. In this approach, the computation on an n-qubit processor is carried out in the n-dimensional single-excitation subspace (SES) of the full 2^n-dimensional Hilbert space. Because any real Hamiltonian can be directly generated in the SES [E. J. Pritchett et al., arXiv:1008.0701], high-dimensional unitary operations can be carried out in a single step, bypassing the need to decompose into single- and two-qubit gates. Although technically nonscalable and unsuitable for applications (including Shor's) requiring enormous Hilbert spaces, this approach would make practical a first-generation quantum computer capable of achieving significant quantum speedup.

  9. Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

    CERN Document Server

    Schröder, Tim; Walsh, Michael; Li, Luozhou; Zheng, Jiabao; Schukraft, Marco; Pacheco, Jose L; Camacho, Ryan M; Bielejec, Edward S; Sipahigil, Alp; Evans, Ruffin E; Sukachev, Denis D; Nguyen, Christian T; Lukin, Mikhail D; Englund, Dirk

    2016-01-01

    The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\\sim 2.5\\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \\pm13$ MHz corresponding to $\\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development o...

  10. Probing the local density of states in three dimensions with a scanning single quantum emitter

    CERN Document Server

    Schell, Andreas W; Benson, Oliver

    2013-01-01

    Their intrinsic properties render single quantum systems as ideal tools for quantum enhanced sensing and microscopy. As an additional benefit, their size is typically on an atomic scale which enables sensing with very high spatial resolution. Here, we report on utilizing a single nitrogen vacancy center in nanodiamond for performing three-dimensional scanning-probe fluorescence lifetime imaging microscopy. By measuring changes of the single emitter's lifetime information on the local density of optical states is acquired at the nanoscale. This technique to gather information on the local density of optical states is important for the understanding of fundamental quantum optical processes as well as for the engineering of novel photonic and plasmonic devices.

  11. Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Rigutti, L.; Tchernycheva, M.; De Luna Bugallo, A.; Jacopin, G.; Julien, F.H. [Institut d' Electronique Fondamentale, UMR 8622 CNRS, University of Paris Sud XI, Bat. 220, 91405 Orsay (France); Fortuna, F. [Centre de Spectrometrie Nucleaire et de Spectroscopie de Masse, UMR 8609 CNRS, University of Paris Sud XI, Bat. 108, 91405 Orsay (France); Furtmayr, F.; Stutzmann, M. [Walter-Schottky-Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Eickhoff, M. [I. Physikalisches Institut, Justus-Liebig-Universitaet, Giessen (Germany)

    2010-07-15

    We report a systematic study of the luminescence properties of Al{sub x}Ga{sub 1-x}N/GaN single and multi quantum disc structures in single nanowires with Al fraction x{sub Al} varying from 0.05 to 1. These quantum structures are situated on the top of GaN nanowires grown in the polar[0001] direction. Nanowires are synthesized by Plasma Assisted Molecular Beam Epitaxy under nitrogen rich growth conditions at a substrate temperature of T=80 C on Si (111) substrates. The PL energy of single and multi-quantum disc systems is explained in terms of Al content in the barriers, band bending at the upper polar surface, and strain relaxation in the heterostructure region (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Double-slit experiment with single wave-driven particles and its relation to quantum mechanics

    DEFF Research Database (Denmark)

    Andersen, Anders Peter; Madsen, Jacob; Reichelt, Christian Günther

    2015-01-01

    even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes...... place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our...... results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schro...

  13. Quantum-Confined Stark Effects in a Single GaN Quantum Dot

    Institute of Scientific and Technical Information of China (English)

    LIU Yong-Hui; WANG Xue-Feng; LI Shu-Shen

    2008-01-01

    Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.

  14. An analysis of temperature dependent photoluminescence line shapes in InGaN

    Science.gov (United States)

    Teo, K. L.; Colton, J. S.; Yu, P. Y.; Weber, E. R.; Li, M. F.; Liu, W.; Uchida, K.; Tokunaga, H.; Akutsu, N.; Matsumoto, K.

    1998-09-01

    Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ˜7 meV as compared with an activation energy of ˜63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.

  15. An analysis of temperature dependent photoluminescence line shapes in InGaN

    Energy Technology Data Exchange (ETDEWEB)

    Teo, K.L.; Colton, J.S.; Yu, P.Y. [Department of Physics, University of , California (United States)]|[Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Weber, E.R. [Department of Materials Science and Mineral Engineering, University of , California (United States)]|[Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Li, M.F.; Liu, W. [Department of Electrical Engineering, Center for Optoelectronics, National University of Singapore, (Singapore) 11920; Uchida, K. [Department of Communications and Systems, The University of Electro-Communications, 1-5-1 Choufugaoka, Choufu, Tokyo 182 (Japan); Tokunaga, H.; Akutsu, N.; Matsumoto, K. [Nippon Sanso Co., Tsukuba Laboratories, 10 Ohkubo Tsukuba, Ibaraki, 300-26 (Japan)

    1998-09-01

    Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted {ital quantitatively} with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of {approximately}7 meV as compared with an activation energy of {approximately}63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins. {copyright} {ital 1998 American Institute of Physics.}

  16. Deterministic quantum nonlinear optics with single atoms and virtual photons

    Science.gov (United States)

    Kockum, Anton Frisk; Miranowicz, Adam; Macrı, Vincenzo; Savasta, Salvatore; Nori, Franco

    2017-06-01

    We show how analogs of a large number of well-known nonlinear-optics phenomena can be realized with one or more two-level atoms coupled to one or more resonator modes. Through higher-order processes, where virtual photons are created and annihilated, an effective deterministic coupling between two states of such a system can be created. In this way, analogs of three-wave mixing, four-wave mixing, higher-harmonic and -subharmonic generation (i.e., up- and down-conversion), multiphoton absorption, parametric amplification, Raman and hyper-Raman scattering, the Kerr effect, and other nonlinear processes can be realized. In contrast to most conventional implementations of nonlinear optics, these analogs can reach unit efficiency, only use a minimal number of photons (they do not require any strong external drive), and do not require more than two atomic levels. The strength of the effective coupling in our proposed setups becomes weaker the more intermediate transition steps are needed. However, given the recent experimental progress in ultrastrong light-matter coupling and improvement of coherence times for engineered quantum systems, especially in the field of circuit quantum electrodynamics, we estimate that many of these nonlinear-optics analogs can be realized with currently available technology.

  17. Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

    Energy Technology Data Exchange (ETDEWEB)

    Lazić, S., E-mail: lazic.snezana@uam.es; Chernysheva, E.; Meulen, H. P. van der; Calleja Pardo, J. M. [Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid (Spain); Gačević, Ž.; Calleja, E. [ISOM-DIE, Universidad Politécnica de Madrid, 28040 Madrid (Spain)

    2015-09-15

    The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.

  18. Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

    Science.gov (United States)

    Lazić, S.; Chernysheva, E.; Gačević, Ž.; van der Meulen, H. P.; Calleja, E.; Calleja Pardo, J. M.

    2015-09-01

    The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ˜330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.

  19. Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

    Directory of Open Access Journals (Sweden)

    S. Lazić

    2015-09-01

    Full Text Available The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW. The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.

  20. Electrostatic Control of Single IndiumArsenic Quantum Dots using IndiumPhosphorus Nanotemplates

    Science.gov (United States)

    Cheriton, Ross

    This thesis focuses on pioneering a scalable route to fabricate quantum information devices based upon single InAs/InP quantum dots emitting in the telecommunications wavelength band around lambda = 1550 nm. Using metallic gates in combination with nanotemplate, site-selective epitaxy techniques, arrays of single quantum dots are produced and electrostatically tuned with a high degree of control over the electrical and optical properties of each individual quantum dot. Using metallic gates to apply local electric fields, the number of electrons within each quantum dot can be tuned and the nature of the optical recombination process controlled. Four electrostatic gates mounted along the sides of a square-based, pyramidal nanotemplate in combination with a flat metallic gate on the back of the InP substrate allow the application of electric fields in any direction across a single quantum dot. Using lateral fields provided by the metallic gates on the sidewalls of the pyramid and a vertical electric field able to control the charge state of the quantum dot, the exchange splitting of the exciton, trion and biexciton are measured as a function of gate voltage. A quadrupole electric field configuration is predicted to symmetrize the product of electron and hole wavefunctions within the dot, producing two degenerate exciton states from the two possible optical decay pathways of the biexciton. Building upon these capabilities, the anisotropic exchange splitting between the exciton states within the biexciton cascade is shown to be reversibly tuned through zero for the first time. We show direct control over the electron and hole wavefunction symmetry, thus enabling the entanglement of emitted photon pairs in asymmetric quantum dots. Optical spectroscopy of single InAs/InP quantum dots atop pyramidal nanotemplates in magnetic fields up to 28T is used to examine the dispersion of the s, p and d shell states. The g-factor and diamagnetic shift of the exciton and charged

  1. Single photon transport in two waveguides chirally coupled by a quantum emitter.

    Science.gov (United States)

    Cheng, Mu-Tian; Ma, Xiao-San; Zhang, Jia-Yan; Wang, Bing

    2016-08-22

    We investigate single photon transport in two waveguides coupled to a two-level quantum emitter (QE). With the deduced analytical scattering amplitudes, we show that under condition of the chiral coupling between the QE and the photon in the two waveguides, the QE can play the role of ideal quantum router to redirect a single photon incident from one waveguide into the other waveguide with a probability of 100% in the ideal condition. The influences of cross coupling between two waveguides and dissipations on the routing are also shown.

  2. Differential-phase-shift quantum key distribution using heralded narrow-band single photons.

    Science.gov (United States)

    Liu, Chang; Zhang, Shanchao; Zhao, Luwei; Chen, Peng; Fung, C-H F; Chau, H F; Loy, M M T; Du, Shengwang

    2013-04-22

    We demonstrate the first proof of principle differential phase shift (DPS) quantum key distribution (QKD) using narrow-band heralded single photons with amplitude-phase modulations. In the 3-pulse case, we obtain a quantum bit error rate (QBER) as low as 3.06% which meets the unconditional security requirement. As we increase the pulse number up to 15, the key creation efficiency approaches 93.4%, but with a cost of increasing the QBER. Our result suggests that narrow-band single photons maybe a promising source for the DPS-QKD protocol.

  3. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).

    Science.gov (United States)

    Jang, Jongjin; Woo, Seohwi; Min, Daehong; Nam, Okhyun

    2015-03-01

    The III-nitrides have attracted much attention because of their applicability in optoelectronic devices, whose emission wavelengths range from green to ultraviolet light due to their wide band gap. However, conventional c-plane GaN-based devices are influenced significantly by spontaneous and piezoelectric polarization effects, which could pose a limitation for increased luminous efficiency as a result of the quantum confined stark effect. Since the early 2000s, many groups have tried to solve these problems by examining the growth of GaN on non- or semipolar surface planes. High power non- and semipolar LEDs can be realized by the growth of a thick active layer. In addition, it is expected that it is possible to grow nonpolar InGaN LEDs with high quality p-GaN layers due to lower hole activation energy, and also long-wavelength semipolar InGaN LEDs because of the capacity for high indium incorporation in the quantum wells (QWs). However, non- and semipolar structures grown on sapphire substrate usually contain a high density of basal stacking faults and threading dislocations. For this reason, the growth of non- and semipolar GaN-based LEDs on a sapphire substrate has been attempted through the introduction of defect reduction techniques such as epitaxial lateral overgrowth, patterned sapphire substrate and re-growth techniques on a porous GaN layer, etc. Also, some researchers have grown high quality non- and semipolar GaN-based LEDs using non- and semipolar freestanding GaN substrates. In this review paper, we introduce and discuss recent progress in the development of non- and semipolar GaN-based LEDs and freestanding GaN substrates.

  4. Controlled rephasing of single spin-waves in a quantum memory based on cold atoms

    Science.gov (United States)

    Farrera, Pau; Albrecht, Boris; Heinze, Georg; Cristiani, Matteo; de Riedmatten, Hugues; Quantum Photonics With Solids; Atoms Team

    2015-05-01

    Quantum memories for light allow a reversible transfer of quantum information between photons and long lived matter quantum bits. In atomic ensembles, this information is commonly stored in the form of single collective spin excitations (spin-waves). In this work we demonstrate that we can actively control the dephasing of the spin-waves created in a quantum memory based on a cold Rb87 atomic ensemble. The control is provided by an external magnetic field gradient, which induces an inhomogeneous broadening of the atomic hyperfine levels. We show that acting on this gradient allows to control the dephasing of individual spin-waves and to induce later a rephasing. The spin-waves are then mapped into single photons, and we demonstrate experimentally that the active rephasing preserves the sub-Poissonian statistics of the retrieved photons. Finally we show that this rephasing control enables the creation and storage of multiple spin-waves in different temporal modes, which can be selectively readout. This is an important step towards the implementation of a functional temporally multiplexed quantum memory for quantum repeaters. We acknowledge support from the ERC starting grant, the Spanish Ministry of Economy and Competitiveness, the Fondo Europeo de Desarrollo Regional, and the International PhD- fellowship program ``la Caixa''-Severo Ochoa @ICFO.

  5. Bias-induced photoluminescence quenching of single colloidal quantum dots embedded in organic semiconductors.

    Science.gov (United States)

    Huang, Hao; Dorn, August; Nair, Gautham P; Bulović, Vladimir; Bawendi, Moungi G

    2007-12-01

    We demonstrate reversible quenching of the photoluminescence from single CdSe/ZnS colloidal quantum dots embedded in thin films of the molecular organic semiconductor N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) in a layered device structure. Our analysis, based on current and charge carrier density, points toward field ionization as the dominant photoluminescence quenching mechanism. Blinking traces from individual quantum dots reveal that the photoluminescence amplitude decreases continuously as a function of increasing forward bias even at the single quantum dot level. In addition, we show that quantum dot photoluminescence is quenched by aluminum tris(8-hydroxyquinoline) (Alq3) in chloroform solutions as well as in thin solid films of Alq3 whereas TPD has little effect. This highlights the importance of chemical compatibility between semiconductor nanocrystals and surrounding organic semiconductors. Our study helps elucidate elementary interactions between quantum dots and organic semiconductors, knowledge needed for designing efficient quantum dot organic optoelectronic devices.

  6. Optical holonomic single quantum gates with a geometric spin under a zero field

    Science.gov (United States)

    Sekiguchi, Yuhei; Niikura, Naeko; Kuroiwa, Ryota; Kano, Hiroki; Kosaka, Hideo

    2017-04-01

    The realization of fast fault-tolerant quantum gates on a single spin is the core requirement for solid-state quantum-information processing. As polarized light shows geometric interference, spin coherence is also geometrically controlled with light via the spin-orbit interaction. Here, we show that a geometric spin in a degenerate subspace of a spin-1 electronic system under a zero field in a nitrogen vacancy centre in diamond allows implementation of optical non-adiabatic holonomic quantum gates. The geometric spin under quasi-resonant light exposure undergoes a cyclic evolution in the spin-orbit space, and acquires a geometric phase or holonomy that results in rotations about an arbitrary axis by any angle defined by the light polarization and detuning. This enables universal holonomic quantum gates with a single operation. We demonstrate a complete set of Pauli quantum gates using the geometric spin preparation and readout techniques. The new scheme opens a path to holonomic quantum computers and repeaters.

  7. Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source.

    Science.gov (United States)

    Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

    2016-06-28

    Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication.

  8. Double-slit experiment with single wave-driven particles and its relation to quantum mechanics.

    Science.gov (United States)

    Andersen, Anders; Madsen, Jacob; Reichelt, Christian; Rosenlund Ahl, Sonja; Lautrup, Benny; Ellegaard, Clive; Levinsen, Mogens T; Bohr, Tomas

    2015-07-01

    In a thought-provoking paper, Couder and Fort [Phys. Rev. Lett. 97, 154101 (2006)] describe a version of the famous double-slit experiment performed with droplets bouncing on a vertically vibrated fluid surface. In the experiment, an interference pattern in the single-particle statistics is found even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schrödinger equation with a source term originating from a localized particle that generates a wave while being simultaneously guided by it. We show that the ensuing particle-wave dynamics can capture some characteristics of quantum mechanics such as orbital quantization. However, the particle-wave dynamics can not reproduce quantum mechanics in general, and we show that the single-particle statistics for our model in a double-slit experiment with an additional splitter plate differs qualitatively from that of quantum mechanics.

  9. Numerical simulation of InGaN Schottky solar cell

    CERN Document Server

    Hamady, Sidi Ould Saad; Fressengeas, Nicolas

    2016-01-01

    The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a relatively low effective mass, high carriers’ mobility, a high absorption coefficient along with good radiation tolerance.However, the main drawback of InGaN is linked to its p-type doping, which is difficult to grow in good quality and on which ohmic contacts are difficult to realize. The Schottky solar cell is a good alternative to avoid the p-type doping of InGaN. In this report, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range. A 18.2% efficiency is predicted for this new InGaN solar cell design.

  10. A photon-photon quantum gate based on a single atom in an optical resonator.

    Science.gov (United States)

    Hacker, Bastian; Welte, Stephan; Rempe, Gerhard; Ritter, Stephan

    2016-08-11

    That two photons pass each other undisturbed in free space is ideal for the faithful transmission of information, but prohibits an interaction between the photons. Such an interaction is, however, required for a plethora of applications in optical quantum information processing. The long-standing challenge here is to realize a deterministic photon-photon gate, that is, a mutually controlled logic operation on the quantum states of the photons. This requires an interaction so strong that each of the two photons can shift the other's phase by π radians. For polarization qubits, this amounts to the conditional flipping of one photon's polarization to an orthogonal state. So far, only probabilistic gates based on linear optics and photon detectors have been realized, because "no known or foreseen material has an optical nonlinearity strong enough to implement this conditional phase shift''. Meanwhile, tremendous progress in the development of quantum-nonlinear systems has opened up new possibilities for single-photon experiments. Platforms range from Rydberg blockade in atomic ensembles to single-atom cavity quantum electrodynamics. Applications such as single-photon switches and transistors, two-photon gateways, nondestructive photon detectors, photon routers and nonlinear phase shifters have been demonstrated, but none of them with the ideal information carriers: optical qubits in discriminable modes. Here we use the strong light-matter coupling provided by a single atom in a high-finesse optical resonator to realize the Duan-Kimble protocol of a universal controlled phase flip (π phase shift) photon-photon quantum gate. We achieve an average gate fidelity of (76.2 ± 3.6) per cent and specifically demonstrate the capability of conditional polarization flipping as well as entanglement generation between independent input photons. This photon-photon quantum gate is a universal quantum logic element, and therefore could perform most existing two-photon operations

  11. A photon-photon quantum gate based on a single atom in an optical resonator

    Science.gov (United States)

    Hacker, Bastian; Welte, Stephan; Rempe, Gerhard; Ritter, Stephan

    2016-08-01

    That two photons pass each other undisturbed in free space is ideal for the faithful transmission of information, but prohibits an interaction between the photons. Such an interaction is, however, required for a plethora of applications in optical quantum information processing. The long-standing challenge here is to realize a deterministic photon-photon gate, that is, a mutually controlled logic operation on the quantum states of the photons. This requires an interaction so strong that each of the two photons can shift the other’s phase by π radians. For polarization qubits, this amounts to the conditional flipping of one photon’s polarization to an orthogonal state. So far, only probabilistic gates based on linear optics and photon detectors have been realized, because “no known or foreseen material has an optical nonlinearity strong enough to implement this conditional phase shift”. Meanwhile, tremendous progress in the development of quantum-nonlinear systems has opened up new possibilities for single-photon experiments. Platforms range from Rydberg blockade in atomic ensembles to single-atom cavity quantum electrodynamics. Applications such as single-photon switches and transistors, two-photon gateways, nondestructive photon detectors, photon routers and nonlinear phase shifters have been demonstrated, but none of them with the ideal information carriers: optical qubits in discriminable modes. Here we use the strong light-matter coupling provided by a single atom in a high-finesse optical resonator to realize the Duan-Kimble protocol of a universal controlled phase flip (π phase shift) photon-photon quantum gate. We achieve an average gate fidelity of (76.2 ± 3.6) per cent and specifically demonstrate the capability of conditional polarization flipping as well as entanglement generation between independent input photons. This photon-photon quantum gate is a universal quantum logic element, and therefore could perform most existing two

  12. Distinguishing between non-orthogonal quantum states of a single spin

    CERN Document Server

    Waldherr, Gerald; Neumann, Philipp; Jelezko, Fedor; Andersson, Erika; Wrachtrup, Jorg

    2012-01-01

    An important task for quantum information processing is optimal discrimination between two non-orthogonal quantum states, which until now has only been realized optically. Here, we present and compare experimental realizations of optimal quantum measurements for distinguishing between two non-orthogonal quantum states encoded in a single ^14 N nuclear spin. Implemented measurement schemes are the minimum-error measurement (known as Helstrom measurement), unambiguous state discrimination using a standard projective mea-surement, and optimal unambiguous state discrimination (known as IDP measurement), which utilizes a three-dimensional Hilbert space. Measurement efficiencies are found to be above 80% for all schemes and reach a value of 90% for the IDP measurement

  13. Heteronuclear intermolecular single-quantum coherences in liquid nuclear magnetic resonance

    Institute of Scientific and Technical Information of China (English)

    Chen Song; Zhu Xiao-Qin; Cai Shu-Hui; Chen Zhong

    2008-01-01

    This paper analyses the heteronuclear Cosy Revamped by Asymmetric Z-gradient Echo Detection pulse sequence.General theoretical expressions of the pulse sequence with arbitrary flip angles were derived by using dipolar field treatment and signals originating from heteronuclear intermolecular single-quantum coherences (iSQCs) in highly-polarized two spin-1/2 systems were mainly discussed in order to find the optimal flip angles.The results show that signals from heteronuclear iSQCs decay slower than those from intermolecular double-quantum coherences or intermolecular zero-quantum coherences. Magical angle experiments validate that the signals are from heteronuclear iSQCs and insensitive to the imperfection of radio-frequency flip angles. All experimental observations are in excellent agreement with theoretical predictions. The quantum-mechanical treatment leads to similar predictions to the dipolar field treatment.

  14. Deterministic secure quantum communication using a single d-level system.

    Science.gov (United States)

    Jiang, Dong; Chen, Yuanyuan; Gu, Xuemei; Xie, Ling; Chen, Lijun

    2017-03-22

    Deterministic secure quantum communication (DSQC) can transmit secret messages between two parties without first generating a shared secret key. Compared with quantum key distribution (QKD), DSQC avoids the waste of qubits arising from basis reconciliation and thus reaches higher efficiency. In this paper, based on data block transmission and order rearrangement technologies, we propose a DSQC protocol. It utilizes a set of single d-level systems as message carriers, which are used to directly encode the secret message in one communication process. Theoretical analysis shows that these employed technologies guarantee the security, and the use of a higher dimensional quantum system makes our protocol achieve higher security and efficiency. Since only quantum memory is required for implementation, our protocol is feasible with current technologies. Furthermore, Trojan horse attack (THA) is taken into account in our protocol. We give a THA model and show that THA significantly increases the multi-photon rate and can thus be detected.

  15. Deterministic secure quantum communication using a single d-level system

    Science.gov (United States)

    Jiang, Dong; Chen, Yuanyuan; Gu, Xuemei; Xie, Ling; Chen, Lijun

    2017-01-01

    Deterministic secure quantum communication (DSQC) can transmit secret messages between two parties without first generating a shared secret key. Compared with quantum key distribution (QKD), DSQC avoids the waste of qubits arising from basis reconciliation and thus reaches higher efficiency. In this paper, based on data block transmission and order rearrangement technologies, we propose a DSQC protocol. It utilizes a set of single d-level systems as message carriers, which are used to directly encode the secret message in one communication process. Theoretical analysis shows that these employed technologies guarantee the security, and the use of a higher dimensional quantum system makes our protocol achieve higher security and efficiency. Since only quantum memory is required for implementation, our protocol is feasible with current technologies. Furthermore, Trojan horse attack (THA) is taken into account in our protocol. We give a THA model and show that THA significantly increases the multi-photon rate and can thus be detected. PMID:28327557

  16. Luminescent carbon quantum dots with high quantum yield as a single white converter for white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Feng, X. T.; Zhang, Y.; Liu, X. G., E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Zhang, F.; Wang, Y. L.; Yang, Y. Z., E-mail: yyztyut@126.com [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China)

    2015-11-23

    Carbon quantum dots (CQDs) with high quantum yield (51.4%) were synthesized by a one-step hydrothermal method using thiosalicylic acid and ethylenediamine as precursor. The CQDs have the average diameter of 2.3 nm and possess excitation-independent emission wavelength in the range from 320 to 440 nm excitation. Under an ultraviolet (UV) excitation, the CQDs aqueous solutions emit bright blue fluorescence directly and exhibit broad emission with a high spectral component ratio of 67.4% (blue to red intensity to total intensity). We applied the CQDs as a single white-light converter for white light emitting diodes (WLEDs) using a UV-LED chip as the excitation light source. The resulted WLED shows superior performance with corresponding color temperature of 5227 K and the color coordinates of (0.34, 0.38) belonging to the white gamut.

  17. Quantum Stirling heat engine and refrigerator with single and coupled spin systems

    Science.gov (United States)

    Huang, Xiao-Li; Niu, Xin-Ya; Xiu, Xiao-Ming; Yi, Xue-Xi

    2014-02-01

    We study the reversible quantum Stirling cycle with a single spin or two coupled spins as the working substance. With the single spin as the working substance, we find that under certain conditions the reversed cycle of a heat engine is NOT a refrigerator, this feature holds true for a Stirling heat engine with an ion trapped in a shallow potential as its working substance. The efficiency of quantum Stirling heat engine can be higher than the efficiency of the Carnot engine, but the performance coefficient of the quantum Stirling refrigerator is always lower than its classical counterpart. With two coupled spins as the working substance, we find that a heat engine can turn to a refrigerator due to the increasing of the coupling constant, this can be explained by the properties of the isothermal line in the magnetic field-entropy plane.

  18. An alternative quantum theory for single particles and a proposed experimental test

    Institute of Scientific and Technical Information of China (English)

    LIU Quan-hui

    2007-01-01

    An alternative quantum theory for single particles bounded in the external field proposed in 1986(Huang X.Y.,Phys.Lett.A.,1986,115:310)is further developed from which the energy of the state for the single particle takes one of the eigenvalues of the quantum Hamiltonian,and the usual quantum mechanics for the particle in a stationary state holds only in the statistical sense.In light of the theory,the particle of definite energy,ground-state-energy for instance,can exhibit a novel periodic behavior.This result for the ground-state-energy state neutron in the Earth's gravitational field is experimentally testable using ultracold neutron beam passing through the same apparatus that was devised in 2002 to identify the energy quantization of neutron in the field(Nesvizhevsky V.V.,et al.,Nature,2002,415:297).

  19. Quantum phase transitions in the bosonic single-impurity Anderson model

    Science.gov (United States)

    Lee, H.-J.; Bulla, R.

    2007-04-01

    We consider a quantum impurity model in which a bosonic impurity level is coupled to a non-interacting bosonic bath, with the bosons at the impurity site subject to a local Coulomb repulsion U. Numerical renormalization group calculations for this bosonic single-impurity Anderson model reveal a zero-temperature phase diagram where Mott phases with reduced charge fluctuations are separated from a Bose-Einstein condensed phase by lines of quantum critical points. We discuss possible realizations of this model, such as atomic quantum dots in optical lattices. Furthermore, the bosonic single-impurity Anderson model appears as an effective impurity model in a dynamical mean-field theory of the Bose-Hubbard model.

  20. On-chip electrically controlled routing of photons from a single quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Bentham, C.; Coles, R. J.; Royall, B.; O' Hara, J.; Prtljaga, N.; Fox, A. M.; Skolnick, M. S.; Wilson, L. R. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Itskevich, I. E., E-mail: I.Itskevich@hull.ac.uk [School of Engineering, University of Hull, Hull HU6 7RX (United Kingdom); Clarke, E. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2015-06-01

    Electrical control of on-chip routing of photons emitted by a single InAs/GaAs self-assembled quantum dot (SAQD) is demonstrated in a photonic crystal cavity-waveguide system. The SAQD is located inside an H1 cavity, which is coupled to two photonic crystal waveguides. The SAQD emission wavelength is electrically tunable by the quantum-confined Stark effect. When the SAQD emission is brought into resonance with one of two H1 cavity modes, it is preferentially routed to the waveguide to which that mode is selectively coupled. This proof of concept provides the basis for scalable, low-power, high-speed operation of single-photon routers for use in integrated quantum photonic circuits.

  1. Single-step fabrication of quantum funnels via centrifugal colloidal casting of nanoparticle films

    Science.gov (United States)

    Kim, Jin Young; Adinolfi, Valerio; Sutherland, Brandon R.; Voznyy, Oleksandr; Kwon, S. Joon; Kim, Tae Wu; Kim, Jeongho; Ihee, Hyotcherl; Kemp, Kyle; Adachi, Michael; Yuan, Mingjian; Kramer, Illan; Zhitomirsky, David; Hoogland, Sjoerd; Sargent, Edward H.

    2015-07-01

    Centrifugal casting of composites and ceramics has been widely employed to improve the mechanical and thermal properties of functional materials. This powerful method has yet to be deployed in the context of nanoparticles--yet size-effect tuning of quantum dots is among their most distinctive and application-relevant features. Here we report the first gradient nanoparticle films to be constructed in a single step. By creating a stable colloid of nanoparticles that are capped with electronic-conduction-compatible ligands we were able to leverage centrifugal casting for thin-films devices. This new method, termed centrifugal colloidal casting, is demonstrated to form films in a bandgap-ordered manner with efficient carrier funnelling towards the lowest energy layer. We constructed the first quantum-gradient photodiode to be formed in a single deposition step and, as a result of the gradient-enhanced electric field, experimentally measured the highest normalized detectivity of any colloidal quantum dot photodetector.

  2. Vacuum Rabi splitting in a plasmonic cavity at the single quantum emitter limit.

    Science.gov (United States)

    Santhosh, Kotni; Bitton, Ora; Chuntonov, Lev; Haran, Gilad

    2016-06-13

    The strong interaction of individual quantum emitters with resonant cavities is of fundamental interest for understanding light-matter interactions. Plasmonic cavities hold the promise of attaining the strong coupling regime even under ambient conditions and within subdiffraction volumes. Recent experiments revealed strong coupling between individual plasmonic structures and multiple organic molecules; however, strong coupling at the limit of a single quantum emitter has not been reported so far. Here we demonstrate vacuum Rabi splitting, a manifestation of strong coupling, using silver bowtie plasmonic cavities loaded with semiconductor quantum dots (QDs). A transparency dip is observed in the scattering spectra of individual bowties with one to a few QDs, which are directly counted in their gaps. A coupling rate as high as 120 meV is registered even with a single QD, placing the bowtie-QD constructs close to the strong coupling regime. These observations are verified by polarization-dependent experiments and validated by electromagnetic calculations.

  3. Quantum Master Equation and Filter for Systems Driven by Fields in a Single Photon State

    CERN Document Server

    Gough, J E; Nurdin, H I

    2011-01-01

    The aim of this paper is to determine quantum master and filter equations for systems coupled to continuous-mode single photon fields. The system and field are described using a quantum stochastic unitary model, where the continuous-mode single photon state for the field is determined by a wavepacket pulse shape. The master equation is derived from this model and is given in terms of a system of coupled equations. The output field carries information about the system from the scattered photon, and is continuously monitored. The quantum filter is determined with the aid of an embedding of the system into a larger system, and is given by a system of coupled stochastic differential equations. An example is provided to illustrate the main results.

  4. Single-step fabrication of quantum funnels via centrifugal colloidal casting of nanoparticle films.

    KAUST Repository

    Kim, Jin Young

    2015-07-13

    Centrifugal casting of composites and ceramics has been widely employed to improve the mechanical and thermal properties of functional materials. This powerful method has yet to be deployed in the context of nanoparticles--yet size-effect tuning of quantum dots is among their most distinctive and application-relevant features. Here we report the first gradient nanoparticle films to be constructed in a single step. By creating a stable colloid of nanoparticles that are capped with electronic-conduction-compatible ligands we were able to leverage centrifugal casting for thin-films devices. This new method, termed centrifugal colloidal casting, is demonstrated to form films in a bandgap-ordered manner with efficient carrier funnelling towards the lowest energy layer. We constructed the first quantum-gradient photodiode to be formed in a single deposition step and, as a result of the gradient-enhanced electric field, experimentally measured the highest normalized detectivity of any colloidal quantum dot photodetector.

  5. Bright single photon source based on self-aligned quantum dot–cavity systems

    DEFF Research Database (Denmark)

    Maier, Sebastian; Gold, Peter; Forchel, Alfred

    2014-01-01

    We report on a quasi-planar quantum-dot-based single-photon source that shows an unprecedented high extraction efficiency of 42% without complex photonic resonator geometries or post-growth nanofabrication. This very high efficiency originates from the coupling of the photons emitted by a quantum...... avenue for efficient (up to 42% demonstrated) and pure (g2(0) value of 0.023) single-photon emission....... dot to a Gaussian shaped nanohill defect that naturally arises during epitaxial growth in a self-aligned manner. We investigate the morphology of these defects and characterize the photonic operation mechanism. Our results show that these naturally arising coupled quantum dot-defects provide a new...

  6. Room Temperature Single-Photon Emission from Individual Perovskite Quantum Dots.

    Science.gov (United States)

    Park, Young-Shin; Guo, Shaojun; Makarov, Nikolay S; Klimov, Victor I

    2015-10-27

    Lead-halide-based perovskites have been the subject of numerous recent studies largely motivated by their exceptional performance in solar cells. Electronic and optical properties of these materials have been commonly controlled by varying the composition (e.g., the halide component) and/or crystal structure. Use of nanostructured forms of perovskites can provide additional means for tailoring their functionalities via effects of quantum confinement and wave function engineering. Furthermore, it may enable applications that explicitly rely on the quantum nature of electronic excitations. Here, we demonstrate that CsPbX3 quantum dots (X = I, Br) can serve as room-temperature sources of quantum light, as indicated by strong photon antibunching detected in single-dot photoluminescence measurements. We explain this observation by the presence of fast nonradiative Auger recombination, which renders multiexciton states virtually nonemissive and limits the fraction of photon coincidence events to ∼6% on average. We analyze limitations of these quantum dots associated with irreversible photodegradation and fluctuations ("blinking") of the photoluminescence intensity. On the basis of emission intensity-lifetime correlations, we assign the "blinking" behavior to random charging/discharging of the quantum dot driven by photoassisted ionization. This study suggests that perovskite quantum dots hold significant promise for applications such as quantum emitters; however, to realize this goal, one must resolve the problems of photochemical stability and photocharging. These problems are largely similar to those of more traditional quantum dots and, hopefully, can be successfully resolved using advanced methodologies developed over the years in the field of colloidal nanostructures.

  7. A quantum gas microscope for detecting single atoms in a Hubbard-regime optical lattice.

    Science.gov (United States)

    Bakr, Waseem S; Gillen, Jonathon I; Peng, Amy; Fölling, Simon; Greiner, Markus

    2009-11-05

    Recent years have seen tremendous progress in creating complex atomic many-body quantum systems. One approach is to use macroscopic, effectively thermodynamic ensembles of ultracold atoms to create quantum gases and strongly correlated states of matter, and to analyse the bulk properties of the ensemble. For example, bosonic and fermionic atoms in a Hubbard-regime optical lattice can be used for quantum simulations of solid-state models. The opposite approach is to build up microscopic quantum systems atom-by-atom, with complete control over all degrees of freedom. The atoms or ions act as qubits and allow the realization of quantum gates, with the goal of creating highly controllable quantum information systems. Until now, the macroscopic and microscopic strategies have been fairly disconnected. Here we present a quantum gas 'microscope' that bridges the two approaches, realizing a system in which atoms of a macroscopic ensemble are detected individually and a complete set of degrees of freedom for each of them is determined through preparation and measurement. By implementing a high-resolution optical imaging system, single atoms are detected with near-unity fidelity on individual sites of a Hubbard-regime optical lattice. The lattice itself is generated by projecting a holographic mask through the imaging system. It has an arbitrary geometry, chosen to support both strong tunnel coupling between lattice sites and strong on-site confinement. Our approach can be used to directly detect strongly correlated states of matter; in the context of condensed matter simulation, this corresponds to the detection of individual electrons in the simulated crystal. Also, the quantum gas microscope may enable addressing and read-out of large-scale quantum information systems based on ultracold atoms.

  8. Ultrafast room temperature single-photon source from nanowire-quantum dots.

    Science.gov (United States)

    Bounouar, S; Elouneg-Jamroz, M; Hertog, M den; Morchutt, C; Bellet-Amalric, E; André, R; Bougerol, C; Genuist, Y; Poizat, J-Ph; Tatarenko, S; Kheng, K

    2012-06-13

    Epitaxial semiconductor quantum dots are particularly promising as realistic single-photon sources for their compatibility with manufacturing techniques and possibility to be implemented in compact devices. Here, we demonstrate for the first time single-photon emission up to room temperature from an epitaxial quantum dot inserted in a nanowire, namely a CdSe slice in a ZnSe nanowire. The exciton and biexciton lines can still be resolved at room temperature and the biexciton turns out to be the most appropriate transition for single-photon emission due to a large nonradiative decay of the bright exciton to dark exciton states. With an intrinsically short radiative decay time (≈300 ps) this system is the fastest room temperature single-photon emitter, allowing potentially gigahertz repetition rates.

  9. Quantum Secret Sharing Protocol between Multiparty and Multiparty with Single Photons and Unitary Transformations

    Institute of Scientific and Technical Information of China (English)

    YAN Feng-Li; GAO Ting; LI You-Cheng

    2008-01-01

    @@ We propose a scheme of quantum secret sharing between Alice's group and Bob's group with single photons and unitary transformations. In the protocol, one member in Alice's group prepares a sequence of single photons in one of four different states, while other members directly encode their information on the sequence of single photons via unitary operations; after that, the last member sends the sequence of single photons to Bob's group.Then Bob's, except for the last one, do work similarly. Finally the last member in Bob's group measures the qubits. If the security of the quantum channel is guaranteed by some tests, then the qubit states sent by the last member of Alice's group can be used as key bits for secret sharing. It is shown that this scheme is safe.

  10. Electrically Driven InAs Quantum-Dot Single-Photon Sources

    Institute of Scientific and Technical Information of China (English)

    XIONG Yong-Hua; NIU Zhi-Chuan; DOU Xiu-Ming; SUN Bao-Quan; HUANG She-Song; NI Hai-Qiao; DU Yun; XIA Jian-Bai

    2009-01-01

    Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AIGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by Ⅰ-Ⅴ curve and electroluminescence, and a single sharp exciton emission line at 966 nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80 K

  11. Experimental open-air quantum key distribution with a single-photon source

    Energy Technology Data Exchange (ETDEWEB)

    Alleaume, R [Laboratoire de Photonique Quantique et Moleculaire, UMR 8537 du CNRS, ENS Cachan, 61 avenue du President Wilson, 94235 Cachan Cedex (France); Treussart, F [Laboratoire de Photonique Quantique et Moleculaire, UMR 8537 du CNRS, ENS Cachan, 61 avenue du President Wilson, 94235 Cachan Cedex (France); Messin, G [Laboratoire Charles Fabry de l' Institut d' Optique, UMR 8501 du CNRS, F-91403 Orsay (France); Dumeige, Y [Laboratoire de Photonique Quantique et Moleculaire, UMR 8537 du CNRS, ENS Cachan, 61 avenue du President Wilson, 94235 Cachan Cedex (France); Roch, J-F [Laboratoire de Photonique Quantique et Moleculaire, UMR 8537 du CNRS, ENS Cachan, 61 avenue du President Wilson, 94235 Cachan Cedex (France); Beveratos, A [Laboratoire Charles Fabry de l' Institut d' Optique, UMR 8501 du CNRS, F-91403 Orsay (France); Brouri-Tualle, R [Laboratoire Charles Fabry de l' Institut d' Optique, UMR 8501 du CNRS, F-91403 Orsay (France); Poizat, J-P [Laboratoire Charles Fabry de l' Institut d' Optique, UMR 8501 du CNRS, F-91403 Orsay (France); Grangier, P [Laboratoire Charles Fabry de l' Institut d' Optique, UMR 8501 du CNRS, F-91403 Orsay (France)

    2004-07-01

    We describe the implementation of a quantum key distribution (QKD) system using a single-photon source, operating at night in open air. The single-photon source at the heart of the functional and reliable set-up relies on the pulsed excitation of a single nitrogen-vacancy colour centre in a diamond nanocrystal. We tested the effect of attenuation on the polarized encoded photons for inferring the longer distance performance of our system. For strong attenuation, the use of pure single-photon states gives measurable advantage over systems relying on weak attenuated laser pulses. The results are in good agreement with theoretical models developed to assess QKD security.

  12. Narrow-band single-photon emission in the near infrared for quantum key distribution.

    Science.gov (United States)

    Wu, E; Jacques, Vincent; Zeng, Heping; Grangier, Philippe; Treussart, François; Roch, Jean-François

    2006-02-06

    We present a detailed study of photophysical properties of single color centers in natural diamond samples emitting in the near infrared under optical excitation. Photoluminescence of these single emitters has several striking features, including narrow-band (FWHM 2 nm) fully polarized emission around 780 nm, a short excited-state lifetime of about 2 ns, and perfect photostability at room temperature under our excitation conditions. Development of a triggered single-photon source relying on this single color center is discussed for application to quantum key distribution.

  13. Narrow-band single-photon emission in the near infrared for quantum key distribution

    CERN Document Server

    Wu, E; Jacques, V; Zeng, H; Grangier, Philippe; Jacques, Vincent; Zeng, Heping

    2005-01-01

    We report on the observation of single colour centers in natural diamond samples emitting in the near infrared region when optically excited. Photoluminescence of these single emitters have several striking features, such as a narrow-band fully polarized emission (FWHM 2 nm) around 780 nm, a short excited-state lifetime of about 2 ns, and perfect photostability at room temperature under our excitation conditions. We present a detailed study of their photophysical properties. Development of a triggered single-photon source relying on this single colour centre is discussed in the prospect of its application to quantum key distribution.

  14. Experimental open air quantum key distribution with a single photon source

    CERN Document Server

    Alleaume, R; Brouri-Tualle, R; Dumeige, Y; Messin, G; Poizat, J P; Roch, J F; Treussart, F; Alleaume, Romain; Beveratos, Alexios; Brouri-Tualle, Rosa; Dumeige, Yannick; Messin, Gaetan; Poizat, Jean-Philippe; Proxy, Philippe Grangier; Roch, Jean-Francois; Treussart, Francois; ccsd-00001148, ccsd

    2004-01-01

    We present a full implementation of a quantum key distribution (QKD) system with a single photon source, operating at night in open air. The single photon source at the heart of the functional and reliable setup relies on the pulsed excitation of a single nitrogen-vacancy color center in diamond nanocrystal. We tested the effect of attenuation on the polarized encoded photons for inferring longer distance performance of our system. For strong attenuation, the use of pure single photon states gives measurable advantage over systems relying on weak attenuated laser pulses. The results are in good agreement with theoretical models developed to assess QKD security.

  15. The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

    Institute of Scientific and Technical Information of China (English)

    Li Liang; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Wu Liang-Liang; Le Ling-Cong

    2013-01-01

    InGaN/GaN p-i-n solar cells,each with an undoped Ino.12Gao.88N absorption layer,are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition.The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed,and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance.An optimized InGaN-based solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported.The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.

  16. Extraction of the beta-factor for single quantum dots coupled to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Nielsen, Henri Thyrrestrup; Sapienza, Luca; Lodahl, Peter

    2010-01-01

    We present measurements of the β-factor, describing the coupling efficiency of light emitted by single InAs/GaAs semiconductor quantum dots into a photonic crystal waveguide mode. The β-factor is evaluated by means of time resolved frequency-dependent photoluminescence spectroscopy. The emission...

  17. Simple and accurate quantification of quantum dots via single-particle counting.

    Science.gov (United States)

    Zhang, Chun-yang; Johnson, Lawrence W

    2008-03-26

    Quantification of quantum dots (QDs) is essential to the quality control of QD synthesis, development of QD-based LEDs and lasers, functionalizing of QDs with biomolecules, and engineering of QDs for biological applications. However, simple and accurate quantification of QD concentration in a variety of buffer solutions and in complex mixtures still remains a critical technological challenge. Here, we introduce a new methodology for quantification of QDs via single-particle counting, which is conceptually different from established UV-vis absorption and fluorescence spectrum techniques where large amounts of purified QDs are needed and specific absorption coefficient or quantum yield values are necessary for measurements. We demonstrate that single-particle counting allows us to nondiscriminately quantify different kinds of QDs by their distinct fluorescence burst counts in a variety of buffer solutions regardless of their composition, structure, and surface modifications, and without the necessity of absorption coefficient and quantum yield values. This single-particle counting can also unambiguously quantify individual QDs in a complex mixture, which is practically impossible for both UV-vis absorption and fluorescence spectrum measurements. Importantly, the application of this single-particle counting is not just limited to QDs but also can be extended to fluorescent microspheres, quantum dot-based microbeads, and fluorescent nano rods, some of which currently lack efficient quantification methods.

  18. Observation of Non-Markovian Dynamics of a Single Quantum Dot in a Micropillar Cavity

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke;

    2011-01-01

    We measure the detuning-dependent dynamics of a quasiresonantly excited single quantum dot coupled to a micropillar cavity. The system is modeled with the dissipative Jaynes-Cummings model where all experimental parameters are determined by explicit measurements. We observe non-Markovian dynamics...

  19. Generating single-photon catalyzed coherent states with quantum-optical catalysis

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xue-xiang, E-mail: xuxuexiang@jxnu.edu.cn [Center for Quantum Science and Technology, Jiangxi Normal University, Nanchang 330022 (China); Yuan, Hong-chun [College of Electrical and Optoelectronic Engineering, Changzhou Institute of Technology, Changzhou 213002 (China)

    2016-07-15

    We theoretically generate single-photon catalyzed coherent states (SPCCSs) by means of quantum-optical catalysis based on the beam splitter (BS) or the parametric amplifier (PA). These states are obtained in one of the BS (or PA) output channels if a coherent state and a single-photon Fock state are present in two input ports and a single photon is registered in the other output port. The success probabilities of the detection (also the normalization factors) are discussed, which is different for BS and PA catalysis. In addition, we prove that the generated states catalyzed by BS and PA devices are actually the same quantum states after analyzing photon number distribution of the SPCCSs. The quantum properties of the SPCCSs, such as sub-Poissonian distribution, anti-bunching effect, quadrature squeezing effect, and the negativity of the Wigner function are investigated in detail. The results show that the SPCCSs are non-Gaussian states with an abundance of nonclassicality. - Highlights: • We generate single-photon catalyzed coherent states with quantum-optical catalysis. • We prove the equivalent effects of the lossless beam splitter and the non-degenerate parametric amplifier. • Some nonclassical properties of the generated states are investigated in detail.

  20. Microwave testing of high-Tc based direct current to a single flux quantum converter

    DEFF Research Database (Denmark)

    Kaplunenko, V. K.; Fischer, Gerd Michael; Ivanov, Z. G.

    1994-01-01

    Design, simulation, and experimental investigations of a direct current to a single flux quantum converter loaded with a Josephson transmission line and driven by an external 70 GHz microwave oscillator are reported. The test circuit includes nine YBaCuO Josephson junctions aligned on the grain b...

  1. Room-temperature near-field reflection spectroscopy of single quantum wells

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Hvam, Jørn Marcher; Madsen, Steen;

    1997-01-01

    . This technique suppresses efficiently the otherwise dominating far-field background and reduces topographic artifacts. We demonstrate its performance on a thin, strained near-surface CdS/ZnS single quantum well at room temperature. The optical structure of these topographically flat samples is due to Cd...

  2. Single quantum path control by a fundamental chirped pulse combined with a subharmonic control pulse

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Liqiang [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Chu, Tianshu, E-mail: tschu008@163.com [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer HHG spectra and attosecond pulse generation from a model He atom. Black-Right-Pointing-Pointer Two-color laser field of a chirped fundamental pulse and a subharmonics control pulse. Black-Right-Pointing-Pointer Single quantum path selection by {beta} = 4.55 chirp pulse and the zero-phase 2000 nm control pulse. Black-Right-Pointing-Pointer Formation of 337 eV supercontinuum region and generation of 39 as pulse. -- Abstract: In this paper, we study the issue of single quantum path control and its role in attosecond pulse generation. By carrying out the time-dependent Schroedinger equation analysis for the harmonic emission from a single He atom irradiated by the two-color laser field, consisting of a short 800 fundamental chirped pulse and a subharmonic 800-2400 nm control pulse, we find that the most favorable condition for attosecond generation is at the fundamental chirp parameter {beta} = 4.55 together with the zero-phase 2000 nm control pulse, in which the single quantum path (short quantum path) is selected to contribute to the harmonic spectrum exhibiting an ultrabroad supercontinuum of a 337 eV bandwidth. Finally, an isolated attosecond pulse as short as 39 as is thus generated directly.

  3. Optimizing the architecture of SFQ-RDP (Single Flux Quantum- Reconfigurable Datapath)

    OpenAIRE

    Mehdipour, Farhad; Honda, Hiroaki; Kataoka, Hiroshi; Inoue, Koji; Murakami, Kazuaki

    2009-01-01

    A large-scale reconfigurable data-path (LSRDP) processor based on single-flux quantum circuits is designed to overcome the issues originating from the CMOS technology. The LSRDP micro-architecture design procedure and its outcome will be presented in this paper.

  4. Quantum interference effects at room temperature in OPV-based single-molecule junctions

    DEFF Research Database (Denmark)

    Arroyo, Carlos R.; Frisenda, Riccardo; Moth-Poulsen, Kasper;

    2013-01-01

    Interference effects on charge transport through an individual molecule can lead to a notable modulation and suppression on its conductance. In this letter, we report the observation of quantum interference effects occurring at room temperature in single-molecule junctions based on oligo(3...

  5. Multi-targeting single fiber-optic biosensor based on evanescent wave and quantum dots

    NARCIS (Netherlands)

    Zhang, Y.; Zeng, Q.; Sun, Y.; Liu, X.; Tu, L.; Kong, X.; Buma, W.J.; Zhang, H.

    2010-01-01

    Highly sensitive, multi-analyte assay is a long-standing challenge for a single fiber-optic evanescent wave biosensor (FOB). In this paper, we report the first realization of such kind of FOB using CdSe/ZnS core/shell quantum dots (QDs) as labels. A direct binding assay model between antibody and an

  6. Mapping the Local Density of Optical States of a Photonic Crystal with Single Quantum Dots

    DEFF Research Database (Denmark)

    Wang, Qin; Stobbe, Søren; Lodahl, Peter

    2011-01-01

    We use single self-assembled InGaAs quantum dots as internal probes to map the local density of optical states of photonic crystal membranes. The employed technique separates contributions from nonradiative recombination and spin-flip processes by properly accounting for the role of the exciton...

  7. Homogeneous linewidth of single InGaAs quantum dot photoluminescence

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Langbein, Wolfgang; Jensen, Jacob Riis

    2000-01-01

    We have used m-photoluminescence spectroscopy with a spectral resolution of 20 meV to measure homogeneous linewidths of single emission lines within an inhomogeneously broadened ensemble of In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10K, a distribution of linewidths peaking around 50 me...

  8. Efficiency and Coherence of Quantum-Dot Single-Photon Sources

    DEFF Research Database (Denmark)

    Madsen, Marta Arcari

    of single quantum dots to the waveguide, we demonstrate that the emitters are coupled with near-unity efficiency to the waveguide mode. We measure a coupling efficiency (β-factor) as high as 98.4% close to the band-edge of the waveguide mode, and β-factors above 90% over a bandwidth of 20 nm. Based...

  9. Magneto-photoluminescence spectroscopy of single InAs/AlAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, D; Meulen, H P van der; Calleja, J M [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Meyer, J M; Haug, R J [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover, D-30167 Hannover (Germany); Pierz, K, E-mail: D.Sarkar@sheffield.ac.u [Physikalisch-Technische Bundesanstalt Braunschweig, D-38116 Braunschweig (Germany)

    2010-02-01

    We present non-resonant, polarization-resolved magneto-photoluminescence measurements up to 12 T on single InAs/AlAs quantum dots. We observe typical g-factors between 1 and 2, very low diamagnetic shifts due to strong exciton localization and low-energy sidebands, which are attributed to the piezoelectric exciton-acoustic phonon interaction.

  10. Fiber-coupled NbN superconducting single-photon detectors for quantum correlation measurements

    NARCIS (Netherlands)

    Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gorska, M.; Reiger, E.; Dorenbos, S.; Zwiller, V.; Milostnaya, I.; Minaeva, O.

    2007-01-01

    We have fabricated fiber-coupled superconducting single-photon detectors (SSPDs), designed for quantum-correlationtype experiments. The SSPDs are nanostructured (~100-nm wide and 4-nm thick) NbN superconducting meandering stripes, operated in the 2 to 4.2 K temperature range, and known for ultrafast

  11. Single-mode GaAs/AlGaAs quantum cascade microlasers

    Institute of Scientific and Technical Information of China (English)

    Gao Yu; Liu Junqi; Liu Fengqi; Zhang Wei; Zhang Quande; Liu Wanfeng; Li Lu; Wang Lijun; Wang Zhanguo

    2009-01-01

    Single-mode edge emitting GaAs/A1GaAs quantum cascade microlasers at a wavelength of about 11.4 μm were realized by shortening the Fabry-P6rot cavity length. The spacing of the longitudinal resonator modes is inversely proportional to the cavity length. Stable single-mode emission with a side mode suppression ratio of about 19 dB at 85 K for a 150-μm-long device was demonstrated.

  12. Single photon quantum non-demolition in the presence of inhomogeneous broadening

    OpenAIRE

    Greentree, Andrew D.; Beausoleil, R. G.; Hollenberg, L. C. L.; Munro, W. J.; Nemoto, Kae; Prawer, S.; Spiller, T. P.

    2009-01-01

    Electromagnetically induced transparency (EIT) has been often proposed for generating nonlinear optical effects at the single photon level; in particular, as a means to effect a quantum non-demolition measurement of a single photon field. Previous treatments have usually considered homogeneously broadened samples, but realisations in any medium will have to contend with inhomogeneous broadening. Here we reappraise an earlier scheme [Munro \\textit{et al.} Phys. Rev. A \\textbf{71}, 033819 (2005...

  13. A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers

    Science.gov (United States)

    Larsson, A.; Forouhar, S.; Cody, J.; Lang, R. J.; Andrekson, P. A.

    1990-01-01

    The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er3+-doped fiber amplifiers.

  14. Design for an efficient single photon source based on a single quantum dot embedded in a parabolic solid immersion lens.

    Science.gov (United States)

    Devaraj, Vasanthan; Baek, Jongseo; Jang, Yudong; Jeong, Hyuk; Lee, Donghan

    2016-04-18

    We have designed a single photon emitter based on a single quantum dot embedded within a single mode parabolic solid immersion lens (pSIL) and a capping low-index pSIL. Numerical simulations predicted that the emitter performance should exhibit a high photon collection efficiency with excellent far-field emission properties, broadband operation, and good tolerance in its geometric (spatial configuration) parameters. Good geometric tolerance in a single-mode pSIL without yielding significant losses in the photon collection efficiency is advantageous for device fabrication. The low-index top pSIL layer provided this structure with a high photon collection efficiency, even in the case of a small numerical aperture (NA). Photon collection efficiencies of 64% and 78% were expected for NA values of 0.41 and 0.5, respectively. In addition to the benefits listed above, our combined pSIL design provided excellent broadband performance in a 100 nm range.

  15. Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

    Science.gov (United States)

    Nippert, Felix; Karpov, Sergey Yu.; Callsen, Gordon; Galler, Bastian; Kure, Thomas; Nenstiel, Christian; Wagner, Markus R.; Straßburg, Martin; Lugauer, Hans-Jürgen; Hoffmann, Axel

    2016-10-01

    We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes. This allows us to gain insight into the physical processes limiting the quantum efficiency of such devices. In the green spectral range, the efficiency deteriorates, which we assign to a combination of diminishing electron-hole wave function overlap and enhanced Auger processes, while a significant reduction in material quality with increased In content can be precluded. Here, we analyze and quantify the entire balance of all loss mechanisms and highlight the particular role of hole localization.

  16. Deep Green And Monolithic White LEDs Based On Combination Of Short-Period InGaN/GaN Superlattice And InGaN QWs

    Science.gov (United States)

    Tsatsulnikov, A. F.; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Chernyakov, A. E.; Zakgeim, A. L.; Cherkashin, N. A.; Hytch, M.

    2011-12-01

    This work presents the results of the investigation of approaches to the synthesis of the active region of LED with extended optical range. Combination of short-period InGaN/GaN superlattice and InGaN quantum well was applied to extend optical range of emission up to 560 nm. Monolithic white LED structures containing two blue and one green QWs separated by the short-period InGaN/GaN superlattice were grown with external quantum efficiency up to 5-6%.

  17. Temporal Purity and Quantum Interference of Single Photons from Two Independent Cold Atomic Ensembles

    Science.gov (United States)

    Qian, Peng; Gu, Zhenjie; Cao, Rong; Wen, Rong; Ou, Z. Y.; Chen, J. F.; Zhang, Weiping

    2016-07-01

    The temporal purity of single photons is crucial to the indistinguishability of independent photon sources for the fundamental study of the quantum nature of light and the development of photonic technologies. Currently, the technique for single photons heralded from time-frequency entangled biphotons created in nonlinear crystals does not guarantee the temporal-quantum purity, except using spectral filtering. Nevertheless, an entirely different situation is anticipated for narrow-band biphotons with a coherence time far longer than the time resolution of a single-photon detector. Here we demonstrate temporally pure single photons with a coherence time of 100 ns, directly heralded from the time-frequency entangled biphotons generated by spontaneous four-wave mixing in cold atomic ensembles, without any supplemented filters or cavities. A near-perfect purity and indistinguishability are both verified through Hong-Ou-Mandel quantum interference using single photons from two independent cold atomic ensembles. The time-frequency entanglement provides a route to manipulate the pure temporal state of the single-photon source.

  18. Quantum Chemical Characterization of Single Molecule Magnets Based on Uranium.

    Science.gov (United States)

    Spivak, Mariano; Vogiatzis, Konstantinos D; Cramer, Christopher J; Graaf, Coen de; Gagliardi, Laura

    2017-03-02

    Multiconfigurational electronic structure theory calculations including spin-orbit coupling effects were performed on four uranium-based single-molecule-magnets. Several quartet and doublet states were computed and the energy gaps between spin-orbit states were then used to determine magnetic susceptibility curves. Trends in experimental magnetic susceptibility curves were well reproduced by the calculations, and key factors affecting performance were identified.

  19. Quantum entanglement in the system of two two-level atoms interacting with a single-mode vacuum field

    Institute of Scientific and Technical Information of China (English)

    Zeng Ke; Fang Mao-Fa

    2005-01-01

    The entanglement properties of the system of two two-level atoms interacting with a single-mode vacuum field are explored. The quantum entanglement between two two-level atoms and a single-mode vacuum field is investigated by using the quantum reduced entropy; the quantum entanglement between two two-level atoms, and that between a single two-level atom and a single-mode vacuum field are studied in terms of the quantum relative entropy. The influences of the atomic dipole-dipole interaction on the quantum entanglement of the system are also discussed. Our results show that three entangled states of two atoms-field, atom-atom, and atom-field can be prepared via two two-level atoms interacting with a single-mode vacuum field.

  20. Excitons and trions in single and vertically coupled quantum dots under an electric field

    Science.gov (United States)

    Zhai, Li-Xue; Wang, Yan; An, Zhong

    2017-08-01

    We present a theoretical study of the exciton (X0), the positive and negative trions (X+ and X-) in single and vertically coupled configurations of self-assembled InGaAs quantum dots under an electric field. The quantum states of X0, X+ and X- have been investigated using a quasi-one-dimensional (Q1D) model within the effective-mass approximation. For the single quantum dots, the electric-field dependent energy levels and the average inter-particle distances for the exciton and trions have been calculated. For the coupled quantum dots, the ground and the excited states for X0, X+ and X- have also been calculated and discussed. It is found that either the hole or the electron can be tuned into resonance states by the electric field and that the transition energy spectra for both trions consequently show crossing and anticrossing patterns. The recombination probabilities of the exciton and trion optical transitions are also calculated. The theoretical results have been compared with previously reported photoluminescence data and qualitative agreement is obtained. The trion conditional wave functions are also plotted under different electric field intensities, and it is found that a molecular orbital can be formed at a critical electric field intensity. The evolution of the energy levels of the trions in coupled quantum dots can be explained by the interplay of particle transfer and the electric field.

  1. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    Science.gov (United States)

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  2. Heralded high-efficiency quantum repeater with atomic ensembles assisted by faithful single-photon transmission.

    Science.gov (United States)

    Li, Tao; Deng, Fu-Guo

    2015-10-27

    Quantum repeater is one of the important building blocks for long distance quantum communication network. The previous quantum repeaters based on atomic ensembles and linear optical elements can only be performed with a maximal success probability of 1/2 during the entanglement creation and entanglement swapping procedures. Meanwhile, the polarization noise during the entanglement distribution process is harmful to the entangled channel created. Here we introduce a general interface between a polarized photon and an atomic ensemble trapped in a single-sided optical cavity, and with which we propose a high-efficiency quantum repeater protocol in which the robust entanglement distribution is accomplished by the stable spatial-temporal entanglement and it can in principle create the deterministic entanglement between neighboring atomic ensembles in a heralded way as a result of cavity quantum electrodynamics. Meanwhile, the simplified parity-check gate makes the entanglement swapping be completed with unity efficiency, other than 1/2 with linear optics. We detail the performance of our protocol with current experimental parameters and show its robustness to the imperfections, i.e., detuning and coupling variation, involved in the reflection process. These good features make it a useful building block in long distance quantum communication.

  3. Time resolved single molecule spectroscopy of semiconductor quantum dot/conjugated organic hybrid nanostructures

    Science.gov (United States)

    Odoi, Michael Yemoh

    Single molecule studies on CdSe quantum dots functionalized with oligo-phenylene vinylene ligands (CdSe-OPV) provide evidence of strong electronic communication that facilitate charge and energy transport between the OPV ligands and the CdSe quantum dot core. This electronic interaction greatly modify, the photoluminescence properties of both bulk and single CdSe-OPV nanostructure thin film samples. Size-correlated wide-field fluorescence imaging show that blinking suppression in single CdSe-OPV is linked to the degree of OPV coverage (inferred from AFM height scans) on the quantum dot surface. The effect of the complex electronic environment presented by photoexcited OPV ligands on the excited state property of CdSe-OPV is measured with single photon counting and photon-pair correlation spectroscopy techniques. Time-tagged-time-resolved (TTTR) single photon counting measurements from individual CdSe-OPV nanostructures, show excited state lifetimes an order of magnitude shorter relative to conventional ZnS/CdSe quantum dots. Second-order intensity correlation measurements g(2)(tau) from individual CdSe-OPV nanostructures point to a weak multi-excitonic character with a strong wavelength dependent modulation depth. By tuning in and out of the absorption of the OPV ligands we observe changes in modulation depth from g(2) (0) ≈ 0.2 to 0.05 under 405 and 514 nm excitation respectively. Defocused images and polarization anisotropy measurements also reveal a well-defined linear dipole emission pattern in single CdSe-OPV nanostructures. These results provide new insights into to the mechanism behind the electronic interactions in composite quantum dot/conjugated organic composite systems at the single molecule level. The observed intensity flickering , blinking suppression and associated lifetime/count rate and antibunching behaviour is well explained by a Stark interaction model. Charge transfer from photo-excitation of the OPV ligands to the surface of the Cd

  4. Andreev and Majorana bound states in single and double quantum dot structures

    Science.gov (United States)

    Silva, Joelson F.; Vernek, E.

    2016-11-01

    We present a numerical study of the emergence of Majorana and Andreev bound states in a system composed of two quantum dots, one of which is coupled to a conventional superconductor, SC1, and the other connects to a topological superconductor, SC2. By controlling the interdot coupling we can drive the system from two single (uncoupled) quantum dots to double (coupled) dot system configurations. We employ a recursive Green’s function technique that provides us with numerically exact results for the local density of states of the system. We first show that in the uncoupled dot configuration (single dot behavior) the Majorana and the Andreev bound states appear in an individual dot in two completely distinct regimes. Therefore, they cannot coexist in the single quantum dot system. We then study the coexistence of these states in the coupled double dot configuration. In this situation we show that in the trivial phase of SC2, the Andreev states are bound to an individual quantum dot in the atomic regime (weak interdot coupling) or extended over the entire molecule in the molecular regime (strong interdot coupling). More interesting features are actually seen in the topological phase of SC2. In this case, in the atomic limit, the Andreev states appear bound to one of the quantum dots while a Majorana zero mode appears in the other one. In the molecular regime, on the other hand, the Andreev bound states take over the entire molecule while the Majorana state remains always bound to one of the quantum dots.

  5. Charge-driven feedback loop in the resonance fluorescence of a single quantum dot

    Science.gov (United States)

    Merkel, B.; Kurzmann, A.; Schulze, J.-H.; Strittmatter, A.; Geller, M.; Lorke, A.

    2017-03-01

    We demonstrate a feedback loop that manifests itself in a strong hysteresis and bistability of the exciton resonance fluorescence signal. Field ionization of photogenerated quantum dot excitons leads to the formation of a charged interface layer that drags the emission line along over a frequency range of more than 30 GHz . These measurements are well described by a rate equation model. With a time-resolved resonance fluorescence measurement we determined the buildup times for the hole gas in the orders of milliseconds. This internal charge-driven feedback loop could be used to reduce the spectral wandering in the emission spectra of single self-assembled quantum dots.

  6. Non-Gaussianity of quantum states: an experimental test on single-photon added coherent states

    CERN Document Server

    Barbieri, Marco; Genoni, Marco G; Ferreyrol, Franck; Blandino, Rémi; Paris, Matteo G A; Grangier, Philippe; Tualle-Brouri, Rosa

    2010-01-01

    Non Gaussian states and processes are useful resources in quantum information with continuous variables. An experimentally accessible criterion has been proposed to measure the degree of non Gaussianity of quantum states, based on the conditional entropy of the state with a Gaussian reference. Here we adopt such criterion to characterise an important class of non classical states, single-photon added coherent states. Our studies demonstrate the reliability and sensitivity of this measure, and use it to quantify how detrimental is the role of experimental imperfections in our realisation.

  7. Single-step propagators for calculation of time evolution in quantum systems with arbitrary interactions

    Science.gov (United States)

    Gonoskov, Ivan; Marklund, Mattias

    2016-05-01

    We propose and develop a general method of numerical calculation of the wave function time evolution in a quantum system which is described by Hamiltonian of an arbitrary dimensionality and with arbitrary interactions. For this, we obtain a general n-order single-step propagator in closed-form, which could be used for the numerical solving of the problem with any prescribed accuracy. We demonstrate the applicability of the proposed approach by considering a quantum problem with non-separable time-dependent Hamiltonian: the propagation of an electron in focused electromagnetic field with vortex electric field component.

  8. Quantum computers based on electron spins controlled by ultrafast off-resonant single optical pulses.

    Science.gov (United States)

    Clark, Susan M; Fu, Kai-Mei C; Ladd, Thaddeus D; Yamamoto, Yoshihisa

    2007-07-27

    We describe a fast quantum computer based on optically controlled electron spins in charged quantum dots that are coupled to microcavities. This scheme uses broadband optical pulses to rotate electron spins and provide the clock signal to the system. Nonlocal two-qubit gates are performed by phase shifts induced by electron spins on laser pulses propagating along a shared waveguide. Numerical simulations of this scheme demonstrate high-fidelity single-qubit and two-qubit gates with operation times comparable to the inverse Zeeman frequency.

  9. Quantum Decoherence of a Single Trapped Ion due to Engineered Reservoir

    Institute of Scientific and Technical Information of China (English)

    YI Xue-Xi

    2002-01-01

    Known as an engineered reservoir due to fluctuations in trap parameter,a classical source of quantum decoherence is considered for a single trapped ion theoretically.For simplicity it is assumed that the fluctuations involved are white noise processes,which enables us to give a simple master equation description of this source of decoherence.Our results show that the decoherence rate depends on the vibrational quantum number in different ways corresponding to the vibrational excitation sideband used there.Besides,this source of decoherence also leads to occurrence of dissipation in the ion system.

  10. Molecule-induced quantum confinement in single-walled carbon nanotube

    Science.gov (United States)

    Hida, Akira; Ishibashi, Koji

    2015-04-01

    A method of fabricating quantum-confined structures with single-walled carbon nanotubes (SWNTs) has been developed. Scanning tunneling spectroscopy revealed that a parabolic confinement potential appeared when collagen model peptides were attached to both ends of an individual SWNT via the formation of carboxylic anhydrides. On the other hand, the confinement potential was markedly changed by yielding the peptide bonds between the SWNT and the collagen model peptides. Photoluminescence spectroscopy measurements showed that a type-II quantum dot was produced in the obtained heterostructure.

  11. Coherent interaction of a metallic structure with a single quantum emitter: from super absorption to cloaking

    CERN Document Server

    Chen, Xue-Wen; Agio, Mario

    2012-01-01

    We provide a general theoretical platform based on quantized radiation in absorptive and inhomogeneous media for investigating the coherent interaction of light with metallic structures in the immediate vicinity of quantum emitters. In the case of a very small metallic cluster, we demonstrate extreme regimes where a single emitter can either counteract or enhance particle absorption by three orders of magnitude. For larger structures, we show that an emitter can eliminate both scattering and absorption and cloak a plasmonic antenna. We provide physical interpretations of our results and discuss their applications in active metamaterials and quantum plasmonics.

  12. Dissecting contact mechanics from quantum interference in single-molecule junctions of stilbene derivatives.

    Science.gov (United States)

    Aradhya, Sriharsha V; Meisner, Jeffrey S; Krikorian, Markrete; Ahn, Seokhoon; Parameswaran, Radha; Steigerwald, Michael L; Nuckolls, Colin; Venkataraman, Latha

    2012-03-14

    Electronic factors in molecules such as quantum interference and cross-conjugation can lead to dramatic modulation and suppression of conductance in single-molecule junctions. Probing such effects at the single-molecule level requires simultaneous measurements of independent junction properties, as conductance alone cannot provide conclusive evidence of junction formation for molecules with low conductivity. Here, we compare the mechanics of the conducting para-terminated 4,4'-di(methylthio)stilbene and moderately conducting 1,2-bis(4-(methylthio)phenyl)ethane to that of insulating meta-terminated 3,3'-di(methylthio)stilbene single-molecule junctions. We simultaneously measure force and conductance across single-molecule junctions and use force signatures to obtain independent evidence of junction formation and rupture in the meta-linked cross-conjugated molecule even when no clear low-bias conductance is measured. By separately quantifying conductance and mechanics, we identify the formation of atypical 3,3'-di(methylthio)stilbene molecular junctions that are mechanically stable but electronically decoupled. While theoretical studies have envisaged many plausible systems where quantum interference might be observed, our experiments provide the first direct quantitative study of the interplay between contact mechanics and the distinctively quantum mechanical nature of electronic transport in single-molecule junctions.

  13. Extraction of the beta-factor for single quantum dots coupled to a photonic crystal waveguide

    DEFF Research Database (Denmark)

    Nielsen, Henri Thyrrestrup; Sapienza, Luca; Lodahl, Peter

    2010-01-01

    wavelength of single quantum dots is temperature tuned across the band edge of a photonic crystal waveguide and the spontaneous emission rate is recorded. Decay rates up to 5.7 ns−1, corresponding to a Purcell factor of 5.2, are measured and β-factors up to 85% are extracted. These results prove......We present measurements of the β-factor, describing the coupling efficiency of light emitted by single InAs/GaAs semiconductor quantum dots into a photonic crystal waveguide mode. The β-factor is evaluated by means of time resolved frequency-dependent photoluminescence spectroscopy. The emission...... the potential of photonic crystal waveguides in the realization of on-chip single-photon sources....

  14. Advances in InGaAs/InP single-photon detector systems for quantum communication

    CERN Document Server

    Zhang, Jun; Zbinden, Hugo; Pan, Jian-Wei

    2015-01-01

    Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized.

  15. Quantum Interference between a Single-Photon Fock State and a Coherent State

    CERN Document Server

    Windhager, Armin; Pacher, Christoph; Peev, Momtchil; Poppe, Andreas

    2010-01-01

    We derive analytical expressions for the single mode quantum field state at the individual output ports of a beam splitter when a single-photon Fock state and a coherent state are incident on the input ports. The output states turn out to be a statistical mixture between a displaced Fock state and a coherent state. Consequently we are able to find an analytical expression for the corresponding Wigner function. Because of the generality of our calculations the obtained results are valid for all passive and lossless optical four port devices. We show further how the results can be adapted to the case of the Mach-Zehnder interferometer. In addition we consider the case for which the single-photon Fock state is replaced with a general input state: a coherent input state displaces each general quantum state at the output port of a beam splitter with the displacement parameter being the amplitude of the coherent state.

  16. Quantum interference between a single-photon Fock state and a coherent state

    Science.gov (United States)

    Windhager, A.; Suda, M.; Pacher, C.; Peev, M.; Poppe, A.

    2011-04-01

    We derive analytical expressions for the single mode quantum field state at the individual output ports of a beam splitter when a single-photon Fock state and a coherent state are incident on the input ports. The output states turn out to be a statistical mixture between a displaced Fock state and a coherent state. Consequently we are able to find an analytical expression for the corresponding Wigner function. Because of the generality of our calculations the obtained results are valid for all passive and lossless optical four port devices. We show further how the results can be adapted to the case of the Mach-Zehnder interferometer. In addition we consider the case for which the single-photon Fock state is replaced with a general input state: a coherent input state displaces each general quantum state at the output port of a beam splitter with the displacement parameter being the amplitude of the coherent state.

  17. Tunable-correlation phenomenon of single photons emitted from a self-assembled quantum dot

    Science.gov (United States)

    Yu, Shang; Wang, Yi-Tao; Tang, Jian-Shun; Yu, Ying; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

    2017-02-01

    Deterministic single-photon source plays a key role in the quantum information technology. Thus, research on various properties of such kind of light source becomes a quite necessary task. In this work, we experimentally observe that the second-order correlation properties of single photons can be continuously tuned from pulsed excitation configuration to continuous-wave excitation configuration under the near resonant photoluminescence excitation. By increasing the power of pulsed excitation laser, the effective excitation time of quantum dot can be extended with assistance of the defect states, and more continuous-wave excitation characteristics will gradually appear in the second-order correlation functions. This abnormal power-induced tunable-correlation mechanism can affect the temporal property of the single-photon source but maintain its antibunching property.

  18. Quantum Simulation of Single-Qubit Thermometry Using Linear Optics.

    Science.gov (United States)

    Mancino, Luca; Sbroscia, Marco; Gianani, Ilaria; Roccia, Emanuele; Barbieri, Marco

    2017-03-31

    Standard thermometry employs the thermalization of a probe with the system of interest. This approach can be extended by incorporating the possibility of using the nonequilibrium states of the probe and the presence of coherence. Here, we illustrate how these concepts apply to the single-qubit thermometer introduced by Jevtic et al. [Phys. Rev. A 91, 012331 (2015)PLRAAN1050-294710.1103/PhysRevA.91.012331] by performing a simulation of the qubit-environment interaction in a linear-optical device. We discuss the role of the coherence and how this affects the usefulness of nonequilibrium conditions. The origin of the observed behavior is traced back to how the coherence affects the propensity to thermalization. We discuss this aspect by considering the availability function.

  19. Cavity-Based Single-Atom Quantum Memory

    CERN Document Server

    Dilley, Jerome; Shore, Bruce W; Kuhn, Axel

    2011-01-01

    We show how to capture a single photon of arbitrary temporal shape with one atom coupled to an optical cavity. Our model applies to Raman transitions in three-level atoms with one branch of the transition controlled by a (classical) laser pulse, and the other coupled to the cavity. Photons impinging on the cavity normally exhibit partial reflection, transmission, and/or absorption by the atom. Only a control pulse of suitable temporal shape ensures impedance matching throughout the pulse, resulting in complete state mapping from photon to atom. For most possible photon shapes, we derive an unambiguous analytic expression for the temporal shape of the required control pulse. The process is subject to some inherent limitations, which we also discuss briefly.

  20. Spin-orbit interaction induced current dip in a single quantum dot coupled to a spin

    Science.gov (United States)

    Giavaras, G.

    2017-03-01

    Experiments on semiconductor quantum dot systems have demonstrated the coupling between electron spins in quantum dots and spins localized in the neighboring area of the dots. Here we show that in a magnetic field the electrical current flowing through a single quantum dot tunnel-coupled to a spin displays a dip at the singlet-triplet anticrossing point which appears due to the spin-orbit interaction. We specify the requirements for which the current dip is formed and examine the properties of the dip for various system parameters, such as energy detuning, spin-orbit interaction strength, and coupling to leads. We suggest a parameter range in which the dip could be probed.

  1. An organic-inorganic broadband photodetector based on a single polyaniline nanowire doped with quantum dots.

    Science.gov (United States)

    Yang, Xianguang; Liu, Yong; Lei, Hongxiang; Li, Baojun

    2016-08-25

    The capability to detect light over a broad waveband is highly important for practical optoelectronic applications and has been achieved with photodetectors of one-dimensional inorganic nanomaterials such as Si, ZnO, and GaN. However, achieving high speed responsivity over an entire waveband within such a photodetector remains a challenge. Here we demonstrate a broadband photodetector using a single polyaniline nanowire doped with quantum dots that is highly responsive over a broadband from 350 to 700 nm. The high responsivity is due to the high density of trapping states at the enormous interfaces between polyaniline and quantum dots. The interface trapping can effectively reduce the recombination rate and enhance the efficiency for light detection. Furthermore, a tunable spectral range can be achieved by size-based spectral tuning of quantum dots. The use of organic-inorganic hybrid polyaniline nanowires in broadband photodetection may offer novel functionalities in optoelectronic devices and circuits.

  2. Full control of quadruple quantum dot circuit charge states in the single electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Delbecq, M. R., E-mail: matthieu.delbecq@riken.jp; Nakajima, T.; Otsuka, T.; Amaha, S. [RIKEN, Center for Emergent Matter Science, 3-1 Wako-shi, Saitama 351-0198 (Japan); Watson, J. D. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Tarucha, S. [RIKEN, Center for Emergent Matter Science, 3-1 Wako-shi, Saitama 351-0198 (Japan); Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-05

    We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We use a simple capacitive model of the series quadruple quantum dots circuit to investigate its complex charge state diagrams and are able to find the most suitable configurations for future Pauli spin blockade measurements. We then experimentally realize the corresponding charge states with a good agreement to our model.

  3. Quantum and classical control of single photon states via a mechanical resonator

    Science.gov (United States)

    Basiri-Esfahani, Sahar; Myers, Casey R.; Combes, Joshua; Milburn, G. J.

    2016-06-01

    Optomechanical systems typically use light to control the quantum state of a mechanical resonator. In this paper, we propose a scheme for controlling the quantum state of light using the mechanical degree of freedom as a controlled beam splitter. Preparing the mechanical resonator in non-classical states enables an optomechanical Stern-Gerlach interferometer. When the mechanical resonator has a small coherent amplitude it acts as a quantum control, entangling the optical and mechanical degrees of freedom. As the coherent amplitude of the resonator increases, we recover single photon and two-photon interference via a classically controlled beam splitter. The visibility of the two-photon interference is particularly sensitive to coherent excitations in the mechanical resonator and this could form the basis of an optically transduced weak-force sensor.

  4. Temperature-driven single-valley Dirac fermions in HgTe quantum wells

    Science.gov (United States)

    Marcinkiewicz, M.; Ruffenach, S.; Krishtopenko, S. S.; Kadykov, A. M.; Consejo, C.; But, D. B.; Desrat, W.; Knap, W.; Torres, J.; Ikonnikov, A. V.; Spirin, K. E.; Morozov, S. V.; Gavrilenko, V. I.; Mikhailov, N. N.; Dvoretskii, S. A.; Teppe, F.

    2017-07-01

    We report on the temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness dc. Our results, obtained in magnetic fields up to 16 T and s temperature range from 2 to 150 K, clearly indicate a change in the band-gap energy with temperature. A quantum well wider than dc evidences a temperature-driven transition from topological insulator to semiconductor phases. At a critical temperature of 90 K, the merging of inter- and intraband transitions in weak magnetic fields clearly specifies the formation of a gapless state, revealing the appearance of single-valley massless Dirac fermions with a velocity of 5.6 ×105m s-1 . For both quantum wells, the energies extracted from the experimental data are in good agreement with calculations on the basis of the eight-band Kane Hamiltonian with temperature-dependent parameters.

  5. Electro-mechanical engineering of non-classical photon emissions from single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hoefer, Bianca; Zallo, Eugenio; Zhang, Jiaxiang; Ding, Fei; Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW-Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany); Trotta, Rinaldo; Rastelli, Armando [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz (Austria)

    2014-07-01

    Indistinguishable photons and entangled photon pairs are the key elements for quantum information applications, for example, building a quantum repeater. Self-assembled semiconductor quantum dots (QDs) are promising candidates for the creation of such non-classical photon emissions, and offer the possibility to be integrated into solid state devices. However, due to the random nature of the self-assembled growth process, post-growth treatments are required to engineer the exciton state in the QDs (e.g. energies, exciton lifetimes, and fine structure splittings). In this work, we study the electro-mechanical engineering of the exciton lifetime, emission energy in the QDs, with the aim to produce single photons with higher indistinguishability. Also we present a recent experimental study on the statistical properties of fine structure splittings in the QD ensemble, in order to gain a deeper understanding of how to generate entangled photon pairs using semiconductor QDs.

  6. Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

    Institute of Scientific and Technical Information of China (English)

    Chang Bo; Liang Jiu-Qing

    2011-01-01

    We have studied the quantum fluctuations of inelastic spin-electron scattering in quantum dot with an embedded biaxial single molecule-magnet and particularly investigated the zero-frequency shot noise and Fano factor in different magnetic fields. It is found that the shot noise and Fano factor exhibit a stepwise behaviour as bias increases in the presence of interaction between the electron and molecule-magnet for a weak magnetic field. As magnetic field becomes strong, a dip is displayed in the shot-noise-bias curve due to the suppression of inelastic shot noise caused by the quantum tunneling of magnetisation. Because of the spontaneous inelastic tunneling at zero bias, a small shot noise occurs, which results in the case of Fano factor F > 1. Moreover, our results show that the sweeping speed can also influence the shot noise and Fano factor obviously.

  7. Thermal vibration of single-walled carbon nanotubes with quantum effects.

    Science.gov (United States)

    Wang, Lifeng; Hu, Haiyan

    2014-08-08

    The thermal vibration of a single-walled carbon nanotube (SWCNT) is investigated by using the models of Euler beam and Timoshenko beam with quantum effects taken into consideration when the law of energy equipartition is unreliable. The relation between temperature and the root of mean-squared (RMS) amplitude of thermal vibration at any cross section of the SWCNT is derived via the beam models in simply supported case and cantilevered case. The RMS amplitude of thermal vibration of SWCNT predicted by using Timoshenko beam is higher than that predicted by using Euler beam. The RMS amplitude of thermal vibration of an SWCNT predicted by the quantum theory is lower than that predicted by the law of energy equipartition. The quantum effect is more important for the thermal vibration of an SWCNT in the cases of higher-order modes, short length and low temperature.

  8. Coherent control and suppressed nuclear feedback of a single quantum dot hole qubit

    CERN Document Server

    De Greve, Kristiaan; Press, David; Ladd, Thaddeus D; Bisping, Dirk; Schneider, Christian; Kamp, Martin; Worschech, Lukas; Hoefling, Sven; Forchel, Alfred; Yamamoto, Yoshihisa

    2011-01-01

    Future communication and computation technologies that exploit quantum information require robust and well-isolated qubits. Electron spins in III-V semiconductor quantum dots, while promising candidates, see their dynamics limited by undesirable hysteresis and decohering effects of the nuclear spin bath. Replacing electrons with holes should suppress the hyperfine interaction and consequently eliminate strong nuclear effects. Using picosecond optical pulses, we demonstrate coherent control of a single hole qubit and examine both free-induction and spin-echo decay. In moving from electrons to holes, we observe significantly reduced hyperfine interactions, evidenced by the reemergence of hysteresis-free dynamics, while obtaining similar coherence times, limited by non-nuclear mechanisms. These results demonstrate the potential of optically controlled, quantum dot hole qubits.

  9. Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating.

    Science.gov (United States)

    Chen, Hong; Fu, Houqiang; Lu, Zhijian; Huang, Xuanqi; Zhao, Yuji

    2016-05-16

    We implement finite-difference time-domain (FDTD) method to simulate the optical properties of highly polarized InGaN light emitting diodes (LEDs) coupled with metallic grating structure. The Purcell factor (Fp), light extraction efficiency (LEE), internal quantum efficiency (IQE), external quantum efficiency (EQE), and modulation frequency are calculated for different polarized emissions. Our results show that light polarization has a strong impact on Fp and LEE of LEDs due to their coupling effects with the surface plasmons (SPs) generated by metallic grating. Fp as high as 34 and modulation frequency up to 5.4 GHz are obtained for a simulated LED structure. Furthermore, LEE, IQE and EQE can also be enhanced by tuning the coupling between polarized emission and SPs. These results can serve as guidelines for the design and fabrication of high efficiency and high speed LEDs for the applications of solid-state lighting and visible-light communication.

  10. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots

    Science.gov (United States)

    Chen, Ze-Sheng; Ma, Ben; Shang, Xiang-Jun; He, Yu; Zhang, Li-Chun; Ni, Hai-Qiao; Wang, Jin-Liang; Niu, Zhi-Chuan

    2016-08-01

    Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g 2(0) < 0.5 which demonstrates a pure single-photon emission.

  11. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

    Science.gov (United States)

    Chen, Ze-Sheng; Ma, Ben; Shang, Xiang-Jun; He, Yu; Zhang, Li-Chun; Ni, Hai-Qiao; Wang, Jin-Liang; Niu, Zhi-Chuan

    2016-12-01

    Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g (2)(0) < 0.5 which demonstrates a pure single-photon emission.

  12. Pressure Study of Photoluminescence in GaN/InGaN/ AlGaN Quantum Wells

    Science.gov (United States)

    Perlin, Piotr; Iota, V.; Weinstein, B. A.; Wisniewski, P.; Osinski, M.; Eliseev, P. G.

    1997-03-01

    We have studied the photoluminescence (PL) from two commercial high brightness single quantum well light emitting diodes (Nichia Chem. Industs.) with In_xGa_1-x N (x=0.45 and 0.2) as the active layers under hydrostatic pressures up to 7 GPa. These diodes are the best existing light emitters at short wavelengths, having the emission wavelengths of 430 nm and 530 nm depending on the content of indium in the 30 Åthick quantum wells. Although these devices show a remarkable quality and efficiency (luminosity as high as 12 cd), the mechanism of recombination remains obscure. We discovered that the pressure coefficient for each of the observed PL peaks is dramatically (2-3 times) lower than that of the energy gap of its InGaN active layer. These observations, in conjunction with the fact that the observed emission occurs below the energy gap of the quantum well material, and also considering the anomalous temperature behavior of the emission (peak energy increasing with temperature) suggest the involvement of localized states and exclude a simple band-to-band recombination picture. These localized states may be tentatively attributed to the presence of band tails in the gap which stem from composition fluctuations in the InGaN alloy. vih>(figures)

  13. A controllable single photon beam-splitter as a node of a quantum network

    Science.gov (United States)

    Kumar, Santosh; Gautam, Gaurav; Ghosh, Saikat; Kumar, Deepak; Indian Institute of Technology, Kanpur, India Collaboration; Jawaharlal Nehru University, New Delhi, India Collaboration

    2016-05-01

    A theoretical model for a controlled single-photon beam-splitter is proposed and analysed. It consists of two crossed optical-cavities with overlapping waists, dynamically coupled to a single flying atom. The system is shown to route a single photon with near-unity efficiency in an effective ``weak-coupling'' regime. Furthermore, two such nodes, forming a segment of a quantum network, are shown to perform several controlled quantum operations. All one-qubit operations involve a transfer of a photon from one cavity to another in a single node, while two-qubit operations involve transfer from one node to a next one, coupled via an optical fiber. Novel timing protocols for classical optical fields are found to simplify possible experimental realizations along with achievable effective parameter regime. This model can be extended to various other physical systems including gated quantum dots, circuit-QED or opto-mechanical elements. This work is supported by DST-SERB, and DAE, Government of India.

  14. Quantum superposition of a single microwave photon in two different 'colour' states

    Science.gov (United States)

    Zakka-Bajjani, Eva; Nguyen, François; Lee, Minhyea; Vale, Leila R.; Simmonds, Raymond W.; Aumentado, José

    2011-08-01

    Fully controlled coherent coupling of arbitrary harmonic oscillators is an important tool for processing quantum information. Coupling between quantum harmonic oscillators has previously been demonstrated in several physical systems using a two-level system as a mediating element. Direct interaction at the quantum level has only recently been realized by means of resonant coupling between trapped ions. Here we implement a tunable direct coupling between the microwave harmonics of a superconducting resonator by means of parametric frequency conversion. We accomplish this by coupling the mode currents of two harmonics through a superconducting quantum interference device (SQUID) and modulating its flux at the difference (~7GHz) of the harmonic frequencies. We deterministically prepare a single-photon Fock state and coherently manipulate it between multiple modes, effectively controlling it in a superposition of two different 'colours'. This parametric interaction can be described as a beamsplitter-like operation that couples different frequency modes. As such, it could be used to implement linear optical quantum computing protocols on-chip.

  15. Fidelity of Quantum Teleportation for Single-Mode Squeezed State Light

    Institute of Scientific and Technical Information of China (English)

    ZHANG Jun-Xiang; XIE Chang-De; PENG Kun-Chi

    2005-01-01

    @@ The fidelity of quantum teleportation of a single-mode squeezed state of light is calculated based on the general theory of quantum-mechanical measurement in the Schrodinger picture. It is shown that the criterion for the nonclassical state teleportation is different from that for coherent state. F = 1/2 is no longer the rigorous boundary between classical and quantum teleportation for a squeezed state of light. When the quantum entanglement of an Einstein-Podolsky-Rosen (EPR) beam used for teleportation and the parameters of the system are given,the fidelity depends on the squeezing of the input squeezed state. The higher the squeezing is, the smaller the fidelity is, and the lower the classical limitation of fidelity is. The dependence of the optimum gain for teleporting a squeezed vacuum state upon the EPR entanglement is also calculated. The results obtained provide important references for designing experimental systems of teleporting a non-classical state and judging the quality of the teleported quantum state.

  16. Single ion impact detection and scanning probe aligned ion implantation for quantum bit formation

    Energy Technology Data Exchange (ETDEWEB)

    Weis, Christoph D.

    2011-10-04

    Quantum computing and quantum information processing is a promising path to replace classical information processing via conventional computers which are approaching fundamental physical limits. Instead of classical bits, quantum bits (qubits) are utilized for computing operations. Due to quantum mechanical phenomena such as superposition and entanglement, a completely different way of information processing is achieved, enabling enhanced performance for certain problem sets. Various proposals exist on how to realize a quantum bit. Among them are electron or nuclear spins of defect centers in solid state systems. Two such candidates with spin degree of freedom are single donor atoms in silicon and nitrogen vacancy (NV) defect centers in diamond. Both qubit candidates possess extraordinary qualities which makes them promising building blocks. Besides certain advantages, the qubits share the necessity to be placed precisely in their host materials and device structures. A commonly used method is to introduce the donor atoms into the substrate materials via ion implantation. For this, focused ion beam systems can be used, or collimation techniques as in this work. A broad ion beam hits the back of a scanning probe microscope (SPM) cantilever with incorporated apertures. The high resolution imaging capabilities of the SPM allows the non destructive location of device areas and the alignment of the cantilever and thus collimated ion beam spot to the desired implant locations. In this work, this technique is explored, applied and pushed forward to meet necessary precision requirements. The alignment of the ion beam to surface features, which are sensitive to ion impacts and thus act as detectors, is demonstrated. The technique is also used to create NV center arrays in diamond substrates. Further, single ion impacts into silicon device structures are detected which enables deliberate single ion doping.

  17. Intrinsic errors in transporting a single-spin qubit through a double quantum dot

    Science.gov (United States)

    Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.

    2017-07-01

    Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

  18. Controlling the quantum state of a single photon emitted from a single polariton

    Energy Technology Data Exchange (ETDEWEB)

    Stanojevic, Jovica; Parigi, Valentina; Bimbard, Erwan; Tualle-Brouri, Rosa; Ourjoumtsev, Alexei; Grangier, Philippe [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Universite Paris-Sud, Campus Polytechnique, RD 128, FR-91127 Palaiseau cedex (France)

    2011-11-15

    We investigate in detail the optimal conditions for a high fidelity transfer from a single-polariton state to a single-photon state and subsequent homodyne detection of the single photon. We assume that, using various possible techniques, the single polariton has initially been stored as a spin-wave grating in a cloud of cold atoms inside a low-finesse cavity. This state is then transferred to a single-photon optical pulse using an auxiliary beam. We optimize the retrieval efficiency and determine the mode of the local oscillator that maximizes the homodyne efficiency of such a photon. We find that both efficiencies can have values close to one in a large region of experimental parameters.

  19. Controlling the quantum state of a single photon emitted from a single polariton

    CERN Document Server

    Stanojevic, Jovica; Bimbard, Erwan; Tualle-Brouri, Rosa; Ourjoumtsev, Alexei; Grangier, Philippe; 10.1103/PhysRevA.84.053830

    2012-01-01

    We investigate in detail the optimal conditions for a high fidelity transfer from a single-polariton state to a single-photon state and subsequent homodyne detection of the single photon. We assume that, using various possible techniques, the single polariton has initially been stored as a spin-wave grating in a cloud of cold atoms inside a low-finesse cavity. This state is then transferred to a single-photon optical pulse using an auxiliary beam. We optimize the retrieval efficiency and determine the mode of the local oscillator that maximizes the homodyne efficiency of such a photon. We find that both efficiencies can have values close to one in a large region of experimental parameters.

  20. Probing correlated quantum many-body systems at the single-particle level

    Energy Technology Data Exchange (ETDEWEB)

    Endres, Manuel

    2013-02-27

    The detection of correlation and response functions plays a crucial role in the experimental characterization of quantum many-body systems. In this thesis, we present novel techniques for the measurement of such functions at the single-particle level. Specifically, we show the single-atom- and single-site-resolved detection of an ultracold quantum gas in an optical lattice. The quantum gas is described by the Bose-Hubbard model, which features a zero temperature phase transition from a superfluid to a Mott-insulating state, a paradigm example of a quantum phase transition. We used the aforementioned detection techniques to study correlation and response properties across the superfluid-Mott-insulator transition. The single-atom sensitivity of our method is achieved by fluorescence detection of individual atoms with a high signal-to-noise ratio. A high-resolution objective collects the fluorescence light and yields in situ 'snapshots' of the quantum gas that allow for a single-site-resolved reconstruction of the atomic distribution. This allowed us to measure two-site and non-local correlation-functions across the superfluid-Mott-insulator transition. Non-local correlation functions are based on the information of an extended region of the system and play an important role for the characterization of low-dimensional quantum phases. While non-local correlation functions were so far only theoretical tools, our results show that they are actually experimentally accessible. Furthermore, we used a new thermometry scheme, based on the counting of individual thermal excitations, to measure the response of the system to lattice modulation. Using this method, we studied the excitation spectrum of the system across the two-dimensional superfluid-Mott-insulator transition. In particular, we detected a 'Higgs' amplitude mode in the strongly-interacting superfluid close to the transition point where the system is described by an effectively Lorentz