Digital radiography using amorphous selenium: photoconductively activated switch (PAS) readout system.

Science.gov (United States)

Reznik, Nikita; Komljenovic, Philip T; Germann, Stephen; Rowlands, John A

2008-03-01

A new amorphous selenium (a-Se) digital radiography detector is introduced. The proposed detector generates a charge image in the a-Se layer in a conventional manner, which is stored on electrode pixels at the surface of the a-Se layer. A novel method, called photoconductively activated switch (PAS), is used to read out the latent x-ray charge image. The PAS readout method uses lateral photoconduction at the a-Se surface which is a revolutionary modification of the bulk photoinduced discharge (PID) methods. The PAS method addresses and eliminates the fundamental weaknesses of the PID methods--long readout times and high readout noise--while maintaining the structural simplicity and high resolution for which PID optical readout systems are noted. The photoconduction properties of the a-Se surface were investigated and the geometrical design for the electrode pixels for a PAS radiography system was determined. This design was implemented in a single pixel PAS evaluation system. The results show that the PAS x-ray induced output charge signal was reproducible and depended linearly on the x-ray exposure in the diagnostic exposure range. Furthermore, the readout was reasonably rapid (10 ms for pixel discharge). The proposed detector allows readout of half a pixel row at a time (odd pixels followed by even pixels), thus permitting the readout of a complete image in 30 s for a 40 cm x 40 cm detector with the potential of reducing that time by using greater readout light intensity. This demonstrates that a-Se based x-ray detectors using photoconductively activated switches could form a basis for a practical integrated digital radiography system.

Infrared detectors and emitters on the basis of semiconductor quantum structures

International Nuclear Information System (INIS)

Kruck, P. R.

1997-08-01

Intersubband transitions in Si/SiGe and GaAs/AlGaAs semiconductor quantum structures have been investigated with respect to possible application as infrared detectors and emitters. Investigation of the polarization dependence of subband absorption in Si/SiGe quantum wells shows both transverse magnetic and transverse electric polarized excitations. Intersubband transitions to several excited states are identified by comparison with self-consistent Luttinger-Kohn type calculations. On the basis of these investigations a quantum well infrared photodetector operating between 3 and 8 μm with a detectivity as high as D*=2 x 10 10 cm Hz 1/2 W -1 under normal incidence illumination and at an operating temperature of T=77K is realized. The polarization dependence of the photoconductivity shows the importance of both the absorption and the vertical transport properties of the photoexcited carriers for the detection mechanism. On the basis of the GaAs/AlGaAs material system a unipolar quantum cascade light emitting diode (LED) has been realized. The LED operates at a wavelength of 6.9 μm. A detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm 2 the optical output power lies in the ten nanowatt range. (author)

Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

Energy Technology Data Exchange (ETDEWEB)

Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, Albany, New York 12203 (United States); Kim, Yihwan; Huang, Yi-Chiau [Applied Materials, Sunnyvale, California 94085 (United States); Reznicek, Alexander [IBM Research at Albany Nanotech, Albany, New York 12203 (United States)

2016-03-07

Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl{sub 4} precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

International Nuclear Information System (INIS)

Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander

2016-01-01

Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl 4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

Science.gov (United States)

Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

2016-03-01

Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

Germanium blocked impurity band far infrared detectors

International Nuclear Information System (INIS)

Rossington, C.S.

1988-04-01

The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the ''Star Wars'' nuclear defense scheme proposed by the Reagan administration

CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

International Nuclear Information System (INIS)

Cuzin, M.

1991-01-01

Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm 3 ). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

Improved photon detector

International Nuclear Information System (INIS)

Zermeno, A.; Marsh, L.M.

1981-01-01

Apparatus and methods used to obtain image information from modulation of a uniform flux. A multi-layered detector apparatus is disclosed which comprises a first conductive layer having two sides, a photoconductive layer thick enough to obtain a desired level of sensitivity and resolution of the detector apparatus when the detector apparatus is exposed to radiation of known energy, one side of the photoconductive layer being integrally affixed to and in electrical contact with one side of the first conductive layer, an insulating layer having two sides that is a phosphor that will emit light when irradiated by x-rays, one side of the insulating layer being affixed to the other side of the photoconductive layer and a transparent conductive layer having two sides, one side of the transparent conductive layer being affixed to the other side of the insulating layer. (author)

Uncooled infrared photodetectors in Poland

Science.gov (United States)

Piotrowski, J.; Piotrowski, A.

2006-03-01

The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Relaxation of photoconductivity and persistent photoconductivity in TiO2 nanotubes

International Nuclear Information System (INIS)

Enachi, Mihail; Braniste, Tudor; Borodin, Eugeniu; Postolache, Vitalie

2013-01-01

Relaxation of photoconductivity is investigated in titania nanotubes produced by electrochemical treatment of Ti foils in organic electrolytes with subsequent thermal treatment at 400 degrees Celsius in air. The photoconductivity was excited both in air and in vacuum with the radiation from a xenon lamp passed through different filters to vary the excitation intensity and wavelength. It was found that the photoconductivity relaxation process consists of two components, i. e. a fast component a slow one. These two components behave differently in air and in the vacuum. The fast component is even faster under vacuum, while the slow component in vacuum is much slower, therefore leading to persistent photoconductivity. The possibility of removing the persistent photoconductivity state by exposure to air is investigated. (authors)

Mid-Infrared Tunable Resonant Cavity Enhanced Detectors

Directory of Open Access Journals (Sweden)

Hans Zogg

2008-09-01

Full Text Available Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the cavity length thus shifting the resonances where the detector is sensitive. Using electrostatically actuated MEMS micromirrors, a very compact tunable detector system has been fabricated. Mirror movements of more than 3 μm at 30V are obtained. With these mirrors, detectors with a wavelength tuning range of about 0.7 μm have been realized. Single detectors can be used in mid-infrared micro spectrometers, while a detector arrangement in an array makes it possible to realize Adaptive Focal Plane Arrays (AFPA.

Infrared emitting and photoconducting colloidal silver chalcogenide nanocrystal quantum dots from a silylamide-promoted synthesis.

Science.gov (United States)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Günter; Heiss, Wolfgang

2011-05-24

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region, making these materials promising as environmentally benign alternatives to established infrared active nanocrystals containing toxic metals such as Hg, Cd, and Pb. We present Ag(2)Se nanocrystals in detail, giving size-tunable luminescence with quantum yields above 1.7%. The luminescence, with a decay time on the order of 130 ns, was shown to improve due to the growth of a monolayer thick ZnSe shell. Photoconductivity with a quantum efficiency of 27% was achieved by blending the Ag(2)Se nanocrystals with a soluble fullerene derivative. The co-injection of lithium silylamide was found to be crucial to the synthesis of Ag chalcogenide nanocrystals, which drastically increased their nucleation rate even at relatively low growth temperatures. Because the same observation was made for the nucleation of Cd chalcogenide nanocrystals, we conclude that the addition of lithium silylamide might generally promote wet-chemical synthesis of metal chalcogenide nanocrystals, including in as-yet unexplored materials.

Ultra-thin infrared metamaterial detector for multicolor imaging applications.

Science.gov (United States)

Montoya, John A; Tian, Zhao-Bing; Krishna, Sanjay; Padilla, Willie J

2017-09-18

The next generation of infrared imaging systems requires control of fundamental electromagnetic processes - absorption, polarization, spectral bandwidth - at the pixel level to acquire desirable information about the environment with low system latency. Metamaterial absorbers have sparked interest in the infrared imaging community for their ability to enhance absorption of incoming radiation with color, polarization and/or phase information. However, most metamaterial-based sensors fail to focus incoming radiation into the active region of a ultra-thin detecting element, thus achieving poor detection metrics. Here our multifunctional metamaterial absorber is directly integrated with a novel mid-wave infrared (MWIR) and long-wave infrared (LWIR) detector with an ultra-thin (~λ/15) InAs/GaSb Type-II superlattice (T2SL) interband cascade detector. The deep sub-wavelength metamaterial detector architecture proposed and demonstrated here, thus significantly improves the detection quantum efficiency (QE) and absorption of incoming radiation in a regime typically dominated by Fabry-Perot etalons. Our work evinces the ability of multifunctional metamaterials to realize efficient wavelength selective detection across the infrared spectrum for enhanced multispectral infrared imaging applications.

Challenges of small-pixel infrared detectors: a review.

Science.gov (United States)

Rogalski, A; Martyniuk, P; Kopytko, M

2016-04-01

In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology-HgCdTe material systems and III-V materials (mainly barrier detectors)-have been investigated.

Ultrafast photoconductor detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

1987-01-01

We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Radiation response issues for infrared detectors

Science.gov (United States)

Kalma, Arne H.

1990-01-01

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Recent progress in infrared detector technologies

Science.gov (United States)

Rogalski, A.

2011-05-01

In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VO x) or amorphous silicon (α-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement. Attractive alternatives consist of low-resistance α-SiGe monocrystalline SiGe quantum wells or quantum dots. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in MEMS systems have lead to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

InP:Fe Photoconducting device

Science.gov (United States)

Hammond, Robert B.; Paulter, Nicholas G.; Wagner, Ronald S.

1984-01-01

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

IR detectors for the Infrared Atmospheric Sounding Interferometer (IASI) instrument payload for the METOP-1 ESA polar platform

Science.gov (United States)

Royer, Michel; Lorans, Dominique; Bischoff, Isabelle; Giotta, Dominique; Wolny, Michel

1994-12-01

IASI is an Infrared Atmospheric Sounding Interferometer devoted to the operational meteorology and to atmospheric studies and is to be installed on board the second ESA Polar Platform called METOP-1, planned to be launched in the year 2000. The main purpose of this high performance instrument is to record temperature and humidity profiles. The required lifetime is 4 years. This paper presents the characteristics of the LW IR detection arrays for the IASI spectrometer which consist of HgCdTe de- tectors. SAT has to develop the Engineering Model, Qualification Model and Fight Models of detectors, each having 4 pixels and AR-coated microlenses in a dedicated space housing equipped with a flexible line and a connector. An array is composed of HgCdTe photoconductive detectors. For this long wavelength the array is sensitive from 8.26 micrometers to 15.5 micrometers . The detectors, with sensitive areas of 900 x 900 micrometers 2, are 100 K operating with passive cooling. High quality HgCdTe material is a key feature for the manufacturing of high performance photoconductive detectors. Therefore epitaxial HgCdTe layers are used in this project. These epilayers are grown at CEA/LETI on lattice matched CdZnTe substrates, by Te-rich liquid phase epitaxy, based on a slider technique. The Cd content in the layer is carefully adjusted to meet the required cut off wavelength on the devices. After growth of the epilayers, the samples are annealed under Hg pressure in order to convert them into N type mate- rials. The electrical transport properties of the liquid phase epitaxied wafers are, at 100 K, mobility (mu) over 150,000 cm2/V.s and electrical concentration N of 1.5 1015 cm-3, the residual doping level being 1014 cm-3 at low temperature. On these materials the feasibility study of long wavelength HgCdTe photoconductors has been achieved with the following results: the responsivity is 330 V/W. The bias voltage is Vp=300 mV for a 4 mW limitation of power for each element. The

Enhancing the Responsivity of Uncooled Infrared Detectors Using Plasmonics for High-Performance Infrared Spectroscopy

Directory of Open Access Journals (Sweden)

Amr Shebl Ahmed

2017-04-01

Full Text Available A lead zirconate titanate (PZT;Pb(Zr0.52Ti0.48O3 layer embedded infrared (IR detector decorated with wavelength-selective plasmonic crystals has been investigated for high-performance non-dispersive infrared (NDIR spectroscopy. A plasmonic IR detector with an enhanced IR absorption band has been designed based on numerical simulations, fabricated by conventional microfabrication techniques, and characterized with a broadly tunable quantum cascade laser. The enhanced responsivity of the plasmonic IR detector at specific wavelength band has improved the performance of NDIR spectroscopy and pushed the limit of detection (LOD by an order of magnitude. In this paper, a 13-fold enhancement in the LOD of a methane gas sensing using NDIR spectroscopy is demonstrated with the plasmonic IR detector.

Pyroelectric Materials for Uncooled Infrared Detectors: Processing, Properties, and Applications

Science.gov (United States)

Aggarwal, M. D.; Batra, A. K.; Guggilla, P.; Edwards, M. E.; Penn, B. G.; Currie, J. R., Jr.

2010-01-01

Uncooled pyroelectric detectors find applications in diverse and wide areas such as industrial production; automotive; aerospace applications for satellite-borne ozone sensors assembled with an infrared spectrometer; health care; space exploration; imaging systems for ships, cars, and aircraft; and military and security surveillance systems. These detectors are the prime candidates for NASA s thermal infrared detector requirements. In this Technical Memorandum, the physical phenomena underlying the operation and advantages of pyroelectric infrared detectors is introduced. A list and applications of important ferroelectrics is given, which is a subclass of pyroelectrics. The basic concepts of processing of important pyroelectrics in various forms are described: single crystal growth, ceramic processing, polymer-composites preparation, and thin- and thick-film fabrications. The present status of materials and their characteristics and detectors figures-of-merit are presented in detail. In the end, the unique techniques demonstrated for improving/enhancing the performance of pyroelectric detectors are illustrated. Emphasis is placed on recent advances and emerging technologies such as thin-film array devices and novel single crystal sensors.

Kinetic inductance detectors for far-infrared spectroscopy

International Nuclear Information System (INIS)

Barlis, A.; Aguirre, J.; Stevenson, T.

2016-01-01

The star formation mechanisms at work in the early universe remain one of the major unsolved problems of modern astrophysics. Many of the luminous galaxies present during the period of peak star formation (at redshift of about 2.5) were heavily enshrouded in dust, which makes observing their properties difficult at optical wavelengths. However, many spectral lines exist at far-infrared wavelengths that serve as tracers of star formation. Here, we describe a detector system suitable for a balloon-borne spectroscopic intensity mapping experiment at far-infrared wavelengths. The system uses lumped-element kinetic inductance detectors (KIDs), which have the potential to achieve high sensitivity and low noise levels. KIDs consist of separate capacitive and inductive elements, and use the inductive element as the radiation absorber. We describe the design considerations, fabrication process, and readout scheme for a prototype LEKID array of 1600 pixels. - Highlights: • We describe a concept for a balloon-borne telescope for far-IR wavelengths. • Telescope would use high-sensitivity kinetic inductance detectors. • Design considerations and fabrication process for prototype detectors.

Kinetic inductance detectors for far-infrared spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Barlis, A., E-mail: abarlis@physics.upenn.edu [University of Pennsylvania Department of Physics and Astronomy, Philadelphia, Pennsylvania (United States); Aguirre, J. [University of Pennsylvania Department of Physics and Astronomy, Philadelphia, Pennsylvania (United States); Stevenson, T. [NASA Goddard Space Flight Center, Greenbelt, Maryland (United States)

2016-07-11

The star formation mechanisms at work in the early universe remain one of the major unsolved problems of modern astrophysics. Many of the luminous galaxies present during the period of peak star formation (at redshift of about 2.5) were heavily enshrouded in dust, which makes observing their properties difficult at optical wavelengths. However, many spectral lines exist at far-infrared wavelengths that serve as tracers of star formation. Here, we describe a detector system suitable for a balloon-borne spectroscopic intensity mapping experiment at far-infrared wavelengths. The system uses lumped-element kinetic inductance detectors (KIDs), which have the potential to achieve high sensitivity and low noise levels. KIDs consist of separate capacitive and inductive elements, and use the inductive element as the radiation absorber. We describe the design considerations, fabrication process, and readout scheme for a prototype LEKID array of 1600 pixels. - Highlights: • We describe a concept for a balloon-borne telescope for far-IR wavelengths. • Telescope would use high-sensitivity kinetic inductance detectors. • Design considerations and fabrication process for prototype detectors.

Far infrared photoconductors

International Nuclear Information System (INIS)

Leotin, J.; Meny, C.

1990-01-01

This paper presents the development of far infrared photoconductors for the focal plane of a spaceborne instrument named SAFIRE. SAFIRE (Spectroscopy of the Atmosphere using Far-Infrared Emission) belongs to the EOS program (Earth Observing System) and is now in the definition phase. It is a joint effort by scientists from the United States, Great Britain, Italy and France for a new generation of atmosphere sensor. The overall goal of the SAFIRE experiment is to improve the understanding of the ozone distribution in the middle atmosphere by conducting global scale measurements of the important chemical, radiative and dynamical processes which influence its changes. This will be accomplished by the measurement of the far infrared thermal limb emission in seven spectral channels covering the range 80 to 400 cm -1 with a maximum resolution of 0.004 cm -1 . For example key gases like OH, O, HO 2 , N 2 O 5 will be probed for the first time. Achievement of the required detector sensitivity in the far-infrared imposes the choice of photoconductive detectors operating at liquid helium temperatures. Germanium doped with gallium is selected for six channels whereas germanium doped with beryllium is suitable for the N 2 O 5 channel. Both photoconductors Ge:Ga and Ge:Be benefit from a well established material technology. A better wavelength coverage of channel 1 is achieved by applying a small uniaxial stress of the order of 0.1 GPa on the Ge:Ga photoconductors. The channel 6B wavelength coverage could be improved by using zinc-doped-germanium (Ge:Zn) or, much better, by using a Blocked Impurity band silicon detector doped with antimony (BIB Si:Sb). The later is developed as an optional basis

Effects of ionizing radiation on cryogenic infrared detectors

Science.gov (United States)

Moseley, S. H.; Silverberg, R. F.; Lakew, B.

1989-01-01

The Diffuse Infrared Background Experiment (DIRBE) is one of three experiments to be carried aboard the Cosmic Background Explorer (COBE) satellite scheduled to be launched by NASA on a Delta rocket in 1989. The DIRBE is a cryogenic absolute photometer operating in a liquid helium dewar at 1.5 K. Photometric stability is a principal requirement for achieving the scientific objectives of this experiment. The Infrared Astronomy Satellite (IRAS), launched in 1983, which used detectors similar to those in DIRBE, revealed substantial changes in detector responsivity following exposure to ionizing radiation encountered on passage through the South Atlantic Anomaly (SAA). Since the COBE will use the same 900 Km sun-synchronous orbit as IRAS, ionizing radiation-induced performance changes in the detectors were a major concern. Here, ionizing radiation tests carried out on all the DIRBE photodetectors are reported. Responsivity changes following exposure to gamma rays, protons, and alpha particle are discussed. The detector performance was monitored following a simulated entire mission life dose. In addition, the response of the detectors to individual particle interactions was measured. The InSb photovoltaic detectors and the Blocked Impurity Band (BIB) detectors revealed no significant change in responsivity following radiation exposure. The Ge:Ga detectors show large effects which were greatly reduced by proper thermal annealing.

Improved mid infrared detector for high spectral or spatial resolution and synchrotron radiation use

Energy Technology Data Exchange (ETDEWEB)

Faye, Mbaye; Bordessoule, Michel; Kanouté, Brahim; Brubach, Jean-Blaise; Roy, Pascale [Synchrotron SOLEIL, L’Orme des Merisiers, F-91192 Gif-sur-Yvette (France); Manceron, Laurent [Synchrotron SOLEIL, L’Orme des Merisiers, F-91192 Gif-sur-Yvette (France); Laboratoire MONARIS, CNRS-Université Pierre et Marie Curie, UMR 8233, 4 Place Jussieu, F-75252 Paris Cedex (France)

2016-06-15

When using bright, small effective size sources, such as synchrotron radiation light beam, for broadband spectroscopy at spectral or spatial high resolution for mid-IR FTIR measurements, a marked detectivity improvement can be achieved by setting up a device matching the detector optical étendue to that of the source. Further improvement can be achieved by reducing the background unmodulated flux and other intrinsic noise sources using a lower temperature cryogen, such as liquid helium. By the combined use of cooled apertures, cold reimaging optics, filters and adapted detector polarization, and preamplification electronics, the sensitivity of a HgCdTe photoconductive IR detector can be improved by a significant factor with respect to standard commercial devices (more than one order of magnitude on average over 6–20 μm region) and the usable spectral range extended to longer wavelengths. The performances of such an optimized detector developed on the AILES Beamline at SOLEIL are presented here.

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Science.gov (United States)

2016-05-16

AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

Photoacoustic-based detector for infrared laser spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Scholz, L.; Palzer, S., E-mail: stefan.palzer@imtek.uni-freiburg.de [Department of Microsystems Engineering-IMTEK, Laboratory for Gas Sensors, University of Freiburg, Georges-Köhler-Allee 102, Freiburg 79110 (Germany)

2016-07-25

In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2v{sub 3} band at 6046.95 cm{sup −1} using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.

A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yuelu; Wang, Linjun, E-mail: ljwang@shu.edu.cn; Xu, Run; Huang, Jian; Tao, Jun; Meng, Hua; Zhang, Jijun; Min, Jiahua

2016-12-01

Highlights: • Graphene layer was spin-coated on CdZnTe to form Au/graphene/CdZnTe/FTO structure. • Graphene layer can significantly improve the contact property of Au/CdZnTe. • Graphene layer can obviously enhance UV photo-response of CdZnTe. • Graphene is a potential buffer material for CdZnTe based high-energy detectors. - Abstract: In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.

Photoconductivity in DNA-Porphyrin Complexes

Science.gov (United States)

Myint, Peco; Oxford, Emma; Nyazenga, Collence; Smith, Walter; Qi, Zhengqing; Johnson, A. T.

2015-03-01

We have measured the photoconductivity of λ - DNA that is modified by intercalating a porphyrin compound, meso-tetrakis(N-methyl-4-pyridiniumyl)porphyrin (TMPyP), into its base stacks. Intercalation was verified by a red shift and hypochromism of the Soret absorption peak. The DNA/porphyrin strands were then deposited onto oxidized silicon substrates which had been patterned with interdigitated electrodes, and blown dry. Electrical measurements were carried out under nitrogen, using illumination from a 445 nm laser; this wavelength falls within the absorption peak of the DNA/porphyrin complexes. When initially measured under dry nitrogen, the complexes show no photoconductivity or dark conductivity. However, at relative humidities of 30% and above, we do observe dark conductivity, and also photoconductivity that grows with time. Photoconductivity gets larger at higher relative humidity. Remarkably, when the humidity is lowered again, some photoconductivity is now observed, indicating a change that persists for more than 24 hours. It may be that the humidity alters the structure of the DNA, perhaps allowing for better alignment of the bases. This work was supported by NSF Grant BMAT-1306170.

Trap-induced photoconductivity in singlet fission pentacene diodes

Energy Technology Data Exchange (ETDEWEB)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

2014-07-21

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

Design of the flame detector based on pyroelectric infrared sensor

Science.gov (United States)

Liu, Yang; Yu, Benhua; Dong, Lei; Li, Kai

2017-10-01

As a fire detection device, flame detector has the advantages of short reaction time and long distance. Based on pyroelectric infrared sensor working principle, the passive pyroelectric infrared alarm system is designed, which is mainly used for safety of tunnel to detect whether fire occurred or not. Modelling and Simulation of the pyroelectric Detector Using Labview. An attempt was made to obtain a simple test platform of a pyroelectric detector which would make an excellent basis for the analysis of its dynamic behaviour. After many experiments, This system has sensitive response, high anti-interference ability and safe and reliable performance.

Infrared microspectroscopy with synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Carr, G.L.; Williams, G.P. [Brookhaven National Lab., Upton, NY (United States). National Synchrotron Light Source

1997-09-01

Infrared microspectroscopy with a high brightness synchrotron source can achieve a spatial resolution approaching the diffraction limit. However, in order to realize this intrinsic source brightness at the specimen location, some care must be taken in designing the optical system. Also, when operating in diffraction limited conditions, the effective spatial resolution is no longer controlled by the apertures typically used for a conventional (geometrically defined) measurement. Instead, the spatial resolution depends on the wavelength of light and the effective apertures of the microscope`s Schwarzchild objectives. The authors have modeled the optical system from the synchrotron source up to the sample location and determined the diffraction-limited spatial distribution of light. Effects due to the dependence of the synchrotron source`s numerical aperture on wavelength, as well as the difference between transmission and reflection measurement modes, are also addressed. Lastly, they examine the benefits (when using a high brightness source) of an extrinsic germanium photoconductive detector with cone optics as a replacement for the standard MCT detector.

Photoconductivity of Activated Carbon Fibers

Science.gov (United States)

Kuriyama, K.; Dresselhaus, M. S.

1990-08-01

The photoconductivity is measured on a high-surface-area disordered carbon material, namely activated carbon fibers, to investigate their electronic properties. Measurements of decay time, recombination kinetics and temperature dependence of the photoconductivity generally reflect the electronic properties of a material. The material studied in this paper is a highly disordered carbon derived from a phenolic precursor, having a huge specific surface area of 1000--2000m{sup 2}/g. Our preliminary thermopower measurements suggest that this carbon material is a p-type semiconductor with an amorphous-like microstructure. The intrinsic electrical conductivity, on the order of 20S/cm at room temperature, increases with increasing temperature in the range 30--290K. In contrast with the intrinsic conductivity, the photoconductivity in vacuum decreases with increasing temperature. The recombination kinetics changes from a monomolecular process at room temperature to a biomolecular process at low temperatures. The observed decay time of the photoconductivity is {approx equal}0.3sec. The magnitude of the photoconductive signal was reduced by a factor of ten when the sample was exposed to air. The intrinsic carrier density and the activation energy for conduction are estimated to be {approx equal}10{sup 21}/cm{sup 3} and {approx equal}20meV, respectively. The majority of the induced photocarriers and of the intrinsic carriers are trapped, resulting in the long decay time of the photoconductivity and the positive temperature dependence of the conductivity.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

Science.gov (United States)

Yan, Jie-Yun

2018-06-01

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Infrared detectors and test technology of cryogenic camera

Science.gov (United States)

Yang, Xiaole; Liu, Xingxin; Xing, Mailing; Ling, Long

2016-10-01

Cryogenic camera which is widely used in deep space detection cools down optical system and support structure by cryogenic refrigeration technology, thereby improving the sensitivity. Discussing the characteristics and design points of infrared detector combined with camera's characteristics. At the same time, cryogenic background test systems of chip and detector assembly are established. Chip test system is based on variable cryogenic and multilayer Dewar, and assembly test system is based on target and background simulator in the thermal vacuum environment. The core of test is to establish cryogenic background. Non-uniformity, ratio of dead pixels and noise of test result are given finally. The establishment of test system supports for the design and calculation of infrared systems.

Ultrafast pulse generation in photoconductive switches

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Dykaar, D. R.

1996-01-01

Carrier and field dynamics in photoconductive switches are investigated by electrooptic sampling and voltage-dependent reflectivity measurements. We show that the nonuniform field distribution due to the two-dimensional nature of coplanar photoconductive switches, in combination with the large di...... difference in the mobilities of holes and electrons, determine the pronounced polarity dependence. Our measurements indicate that the pulse generation mechanism is a rapid voltage breakdown across the photoconductive switch and not a local field breakdown...

Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

DEFF Research Database (Denmark)

Frello, T.; Veje, E.; Leistiko, Otto

1996-01-01

We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence...... of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. ©1996 American Institute of Physics....

Terahertz Photoconductivity of Graphene Nanostructures

DEFF Research Database (Denmark)

Jensen, Søren A.; Ulbricht, Ronald; Narita, Akimitsu

2013-01-01

The photoconductive properties of graphene nanoribbons and carbon nanotubes were studied using optical pump-THz probe spectroscopy. A reduction in conductivity of GNRs compared to CNTs was observed.......The photoconductive properties of graphene nanoribbons and carbon nanotubes were studied using optical pump-THz probe spectroscopy. A reduction in conductivity of GNRs compared to CNTs was observed....

Photoconductivity relaxation and electron transport in macroporous silicon structures

Directory of Open Access Journals (Sweden)

L.A. Karachevtseva

2017-12-01

Full Text Available Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at various temperatures was investigated. The kinetics of photoconductivity distribution in macroporous silicon and Si substrate has been calculated using the finite-difference time-domain method. The maximum of photoconductivity has been found both in the layer of macroporous silicon and in the monocrystalline substrate. The kinetics of photoconductivity distribution in macroporous silicon showed rapid relaxation of the photoconductivity maximum in the layer of macroporous silicon and slow relaxation of it in the monocrystalline substrate.

Thermophysics modeling of an infrared detector cryochamber for transient operational scenario

Science.gov (United States)

Singhal, Mayank; Singhal, Gaurav; Verma, Avinash C.; Kumar, Sushil; Singh, Manmohan

2016-05-01

An infrared detector (IR) is essentially a transducer capable of converting radiant energy in the infrared regime into a measurable form. The benefit of infrared radiation is that it facilitates viewing objects in dark or through obscured conditions by detecting the infrared energy emitted by them. One of the most significant applications of IR detector systems is for target acquisition and tracking of projectile systems. IR detectors also find widespread applications in the industry and commercial market. The performance of infrared detector is sensitive to temperatures and performs best when cooled to cryogenic temperatures in the range of nearly 120 K. However, the necessity to operate in such cryogenic regimes increases the complexity in the application of IR detectors. This entails a need for detailed thermophysics analysis to be able to determine the actual cooling load specific to the application and also due to its interaction with the environment. This will enable design of most appropriate cooling methodologies suitable for specific scenarios. The focus of the present work is to develop a robust thermo-physical numerical methodology for predicting IR cryochamber behavior under transient conditions, which is the most critical scenario, taking into account all relevant heat loads including radiation in its original form. The advantage of the developed code against existing commercial software (COMSOL, ANSYS, etc.), is that it is capable of handling gas conduction together with radiation terms effectively, employing a ubiquitous software such as MATLAB. Also, it requires much smaller computational resources and is significantly less time intensive. It provides physically correct results enabling thermal characterization of cryochamber geometry in conjunction with appropriate cooling methodology. The code has been subsequently validated experimentally as the observed cooling characteristics are found to be in close agreement with the results predicted using

Mid infrared MEMS FTIR spectrometer

Science.gov (United States)

Erfan, Mazen; Sabry, Yasser M.; Mortada, Bassem; Sharaf, Khaled; Khalil, Diaa

2016-03-01

In this work we report, for the first time to the best of our knowledge, a bulk-micromachined wideband MEMS-based spectrometer covering both the NIR and the MIR ranges and working from 1200 nm to 4800 nm. The core engine of the spectrometer is a scanning Michelson interferometer micro-fabricated using deep reactive ion etching (DRIE) technology. The spectrum is obtained using the Fourier Transform techniques that allows covering a very wide spectral range limited by the detector responsivity. The moving mirror of the interferometer is driven by a relatively large stroke electrostatic comb-drive actuator. Zirconium fluoride (ZrF4) multimode optical fibers are used to connect light between the white light source and the interferometer input, as well as the interferometer output to a PbSe photoconductive detector. The recorded signal-to-noise ratio is 25 dB at the wavelength of 3350 nm. The spectrometer is successfully used in measuring the absorption spectra of methylene chloride, quartz glass and polystyrene film. The presented solution provides a low cost method for producing miniaturized spectrometers in the near-/mid-infrared.

Radiation effects in IRAS extrinsic infrared detectors

Science.gov (United States)

Varnell, L.; Langford, D. E.

1982-01-01

During the calibration and testing of the Infrared Astronomy Satellite (IRAS) focal plane, it was observed that the extrinsic photoconductor detectors were affected by gamma radiation at dose levels of the order of one rad. Since the flight environment will subject the focal plane to dose levels of this order from protons in single pass through the South Atlantic Anomaly, an extensive program of radiation tests was carried out to measure the radiation effects and to devise a method to counteract these effects. The effects observed after irradiation are increased responsivity, noise, and rate of spiking of the detectors after gamma-ray doses of less than 0.1 rad. The detectors can be returned almost to pre-irradiation performance by increasing the detector bias to breakdown and allowing a large current to flow for several minutes. No adverse effects on the detectors have been observed from this bias boost, and this technique will be used for IRAS with frequent calibration to ensure the accuracy of observations made with the instrument.

Application of photoconductivity decay and photocurrent generation ...

Indian Academy of Sciences (India)

Unknown

... (PCD) and photocurrent generation (PCG) methods are simple and low cost methods of ... flection based detection of the change in photoconductivity .... 2.2 Photoconductivity decay behaviour .... con solar cell of known spectral response. 4.

SAT's infrared equipment using second-generation detectors

Science.gov (United States)

Siriex, Michel B.

1995-09-01

In 1982 SAT proposed for the first time a second generation detector in the design of FLIRs for the TRIGAT program, since then different types of IR equipment have been developed on the basis of this technology: (1) An infra-red seeker for the MICA missile. (2) Three types of IRST: VAMPIR MB for naval applications, SIRENE for the Army and OSF for the Rafale aircraft. (3) Three thermal imagers: Condor 1 for the mast mounted sight equipping the long range anti tank system, Tiger installed on the sight of the medium range antitank system, and Condor 2 for the pilot sight of the TRIGAT French-German helicopter. Infra-red detectors are MCT IR-CCD focal plane arrays developed by SOFRADIR with the objective of the best standardization possible in spite of different configurations and specifications for each program. In this paper, we intend to present the main features of this technology for these programs and the advantages obtained by comparison with the first generation in terms of performance. Industrialization of these products is starting now, and a specific effort has been made to standardize the components, especially the driving and read out electronics. A set of ASICs has been developed to make compact detection modules including a detector in his dewar, a cooling machine, and a proximity electronic.

Polymer-Ceramic Composite Materials for Pyroelectric Infrared Detectors: An Overview

Science.gov (United States)

Aggarwal, M. D; Currie, J. R.; Penn, B. G.; Batra, A. K.; Lal, R. B.

2007-01-01

Ferroelectrics:Polymer composites can be considered an established substitute for conventional electroceramics and ferroelectric polymers. The composites have a unique blend of polymeric properties such as mechanical flexibility, high strength, formability, and low cost, with the high electro-active properties of ceramic materials. They have attracted considerable interest because of their potential use in pyroelectric infrared detecting devices and piezoelectric transducers. These flexible sensors and transducers may eventually be useful for their health monitoring applications for NASA crew launch vehicles and crew exploration vehicles being developed. In the light of many technologically important applications in this field, it is worthwhile to present an overview of the pyroelectric infrared detector theory, models to predict dielectric behavior and pyroelectric coefficient, and the concept of connectivity and fabrication techniques of biphasic composites. An elaborate review of Pyroelectric-Polymer composite materials investigated to date for their potential use in pyroelectric infrared detectors is presented.

Performance overview of the Euclid infrared focal plane detector subsystems

Science.gov (United States)

Waczynski, A.; Barbier, R.; Cagiano, S.; Chen, J.; Cheung, S.; Cho, H.; Cillis, A.; Clémens, J.-C.; Dawson, O.; Delo, G.; Farris, M.; Feizi, A.; Foltz, R.; Hickey, M.; Holmes, W.; Hwang, T.; Israelsson, U.; Jhabvala, M.; Kahle, D.; Kan, Em.; Kan, Er.; Loose, M.; Lotkin, G.; Miko, L.; Nguyen, L.; Piquette, E.; Powers, T.; Pravdo, S.; Runkle, A.; Seiffert, M.; Strada, P.; Tucker, C.; Turck, K.; Wang, F.; Weber, C.; Williams, J.

2016-07-01

In support of the European space agency (ESA) Euclid mission, NASA is responsible for the evaluation of the H2RG mercury cadmium telluride (MCT) detectors and electronics assemblies fabricated by Teledyne imaging systems. The detector evaluation is performed in the detector characterization laboratory (DCL) at the NASA Goddard space flight center (GSFC) in close collaboration with engineers and scientists from the jet propulsion laboratory (JPL) and the Euclid project. The Euclid near infrared spectrometer and imaging photometer (NISP) will perform large area optical and spectroscopic sky surveys in the 0.9-2.02 μm infrared (IR) region. The NISP instrument will contain sixteen detector arrays each coupled to a Teledyne SIDECAR application specific integrated circuit (ASIC). The focal plane will operate at 100K and the SIDECAR ASIC will be in close proximity operating at a slightly higher temperature of 137K. This paper will describe the test configuration, performance tests and results of the latest engineering run, also known as pilot run 3 (PR3), consisting of four H2RG detectors operating simultaneously. Performance data will be presented on; noise, spectral quantum efficiency, dark current, persistence, pixel yield, pixel to pixel uniformity, linearity, inter pixel crosstalk, full well and dynamic range, power dissipation, thermal response and unit cell input sensitivity.

Understanding the effect of flower extracts on the photoconducting properties of nanostructured TiO2.

Science.gov (United States)

Ansari, S G; Bhayana, Laitka; Umar, Ahmad; Al-Hajry, A; Al-Deyab, Salem S; Ansari, Z A

2012-10-01

Here we report an easy method to improve the optoelectronic properties of commercially available TiO2 nanopowder using extracts of various flowers viz. Calendula Orange (CO), Calendula Yellow (CY), Dahlia Violet (DV), Dahlia Yellow (DY), Rabbit flower (RF), Sweet Poppy (SP), Sweet Williams (SW) and their Mixed Extracts (ME). Various analysis techniques such as UV-Vis, FTIR, FESEM, XRD, and Raman spectroscopy were used to characterize for elemental, structural and morphological properties of the unmixed/mixed TiO2 nanopowder. TiO2 nanopowder was also calcined at 550 degrees C. Thick films of the these unmixed/mixed powder were printed, using conventional screen printing method, on fluorine doped tin oxide (FTO) substrate with organic binders and dried at 45 degrees C. The photoconducting properties are investigated as a function of wavelength from ultra-violet (UV) to infra-red (IR) region at a constant illumination intensity. Photocurrent gradually decreases when irradiated from UV to IR region. In case of unmixed and uncalcined TiO2, conductance decreased continuously whereas when extracts are added, a flat region of conductance is observed. The overall effect of extracts (colour pigments) is seen as an increase in the photoconductance. Highest photoconductance is observed in case of DY flower extract. Anthocyanins, present in flowers are known to have antioxidative properties and hence can contribute in photoconduction by reducing the surface adsorbed oxygen. This investigation indicates the potential use of flower extracts for dye sensitized solar cell (DSSC).

Chemical imaging of cotton fibers using an infrared microscope and a focal-plane array detector

Science.gov (United States)

In this presentation, the chemical imaging of cotton fibers with an infrared microscope and a Focal-Plane Array (FPA) detector will be discussed. Infrared spectroscopy can provide us with information on the structure and quality of cotton fibers. In addition, FPA detectors allow for simultaneous spe...

Interface engineered carbon nanotubes with SiO{sub 2} for flexible infrared detectors

Energy Technology Data Exchange (ETDEWEB)

Huang, Zhenlong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gao, Min, E-mail: mingao@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Center for Information in Medicine, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Pan, Taisong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Wei, Xianhua [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang, Sichuan 621010 (China); Chen, Chonglin [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249 (United States); Department of Physics and the Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Lin, Yuan, E-mail: linyuan@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Center for Information in Medicine, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2017-08-15

Highlights: • Interface engineered carbon nanotubes with SiO{sub 2} is used to construct a kind of flexible infrared detector. • The interface between the MWCNTs and SiO{sub 2} could enhance the IR response speed. • Detector based on the integrated interface of MWCNTs and SiO{sub 2} has successfully detected the movements of the human fingers. - Abstract: Nitrogen-doped/non-doped carbon nanotubes (CNTs) were integrated on SiO{sub 2}/Si and PMMA substrates for understanding the infrared sensing mechanisms. The nanotube structures on SiO{sub 2} substrates exhibit a much shorter response time (about 40 ms) than those directly on PMMA substrates (about 1200 ms), indicating the interface effects between CNTs and the substrates. The infrared responses for both structures show a linear relationship with the light power density even at the radiation power as low as 0.1 mW/mm{sup 2}. Moreover, a new concept flexible IR detector was designed and fabricated by transferring the CNTs/SiO{sub 2} structure onto the PMMA substrate, which exhibits both short response time (50 ms) and good flexibility. The successful detection of human finger movements indicates the practical applications of the CNT-based detectors for the detection of weak thermal or far infrared radiation.

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

Innovative mid-infrared detector concepts

Science.gov (United States)

Höfling, Sven; Pfenning, Andreas; Weih, Robert; Ratajczak, Albert; Hartmann, Fabian; Knebl, Georg; Kamp, Martin; Worschech, Lukas

2016-09-01

Gas sensing is a key technology with applications in various industrial, medical and environmental areas. Optical detection mechanisms allow for a highly selective, contactless and fast detection. For this purpose, rotational-vibrational absorption bands within the mid infrared (MIR) spectral region are exploited and probed with appropriate light sources. During the past years, the development of novel laser concepts such as interband cascade lasers (ICLs) and quantum cascade lasers (QCLs) has driven a continuous optimization of MIR laser sources. On the other hand side, there has been relatively little progress on detectors in this wavelength range. Here, we study two novel and promising GaSb-based detector concepts: Interband cascade detectors (ICD) and resonant tunneling diode (RTD) photodetectors. ICDs are a promising approach towards highly sensitive room temperature detection of MIR radiation. They make use of the cascading scheme that is enabled by the broken gap alignment of the two binaries GaSb and InAs. The interband transition in GaSb/InAs-superlattices (SL) allows for normal incidence detection. The cut-off wavelength, which determines the low energy detection limit, can be engineered via the SL period. RTD photodetectors act as low noise and high speed amplifiers of small optically generated electrical signals. In contrast to avalanche photodiodes, where the gain originates from multiplication due to impact ionization, in RTD photodetectors a large tunneling current is modulated via Coulomb interaction by the presence of photogenerated minority charge carriers. For both detector concepts, first devices operational at room temperature have been realized.

On the sensitivity of heterodyne detectors in far infrared astronomy

International Nuclear Information System (INIS)

Bueren, H.G. van

1976-01-01

The signal-to-noise ratio of astronomical heterodyne detection infrared spectrographs is considered, taking into account background, linewidth and seeing effects. A comparison with incoherent detector systems is presented. (author)

Protection of High Ceiling Nuclear Facilities Using Photoelectric Sensors and Infrared Fire Detectors

International Nuclear Information System (INIS)

Wadoud, A.A.; El Eissawi, H.M.; Saleh, A.A.

2017-01-01

A variety of different security systems and components are commercially available and widely used. Before implementing a security system, it is important to understand the characteristics and requirements of the facility area to be protected. Technology and manufacturers of security devices are rapidly changing. It is necessary to use optimal security equipment suitable for the surrounding environment of the facility to be protected. Several security sensors can be used to protect the nuclear facilities, such as passive infrared detectors and glass breakage sensors, vibration detectors, and microwave sensors. This work introduces technical specifications, operation and method of installation for these detectors in nuclear facilities. Also a comparative study of different security sensors or equipment is provided. The photoelectric detectors and infrared fire beam smoke detectors are reliable, suitable and advanced security equipment. They can be used in special cases because of their advantages, this includes their long ranges and accuracy in performance. This paper presents a new concept for adapting the use infrared optical fire beam smoke detector as intrusion detection equipment in high ceiling buildings or towering height facilities. This is in addition to their main function, namely fire detection.The paper also provides a study for their types and installation method. Focus is made on the installation and operation method for two advanced security systems, and wireless control circuit for the overall system operation

Fast rise time IR detectors for lepton colliders

International Nuclear Information System (INIS)

Drago, A.; Bini, S.; Guidi, M. Cestelli; Marcelli, A.; Pace, E.

2016-01-01

Diagnostics is a fundamental issue for accelerators whose demands are continuously increasing. In particular bunch-by-bunch diagnostics is a key challenge for the latest generation of lepton colliders and storage rings. The Frascati Φ-factory, DAΦNE, colliding at 1.02 GeV in the centre of mass, hosts in the main rings few synchrotron radiation beamlines and two of them collect the synchrotron radiation infrared emission: SINBAD from the electron ring and 3+L from the positron ring. At DAΦNE each bucket is 2.7 ns long and particles are gathered in bunches emitting pulsed IR radiation, whose intensity in the long wavelength regime is directly proportional to the accumulated particles. Compact uncooled photoconductive HgCdTe detectors have been tested in both beamlines using dedicated optical layouts. Actually, the fast rise time of HgCdTe semiconductors give us the chance to test bunch-by-bunch devices for both longitudinal and transverse diagnostics. For the longitudinal case, single pixel detectors have been used, while for the transverse diagnostics, multi-pixel array detectors, with special custom design, are under test. This contribution will briefly describe the status of the research on fast IR detectors at DAΦNE, the results obtained and possible foreseen developments.

Evaluation of light detector surface area for functional Near Infrared Spectroscopy.

Science.gov (United States)

Wang, Lei; Ayaz, Hasan; Izzetoglu, Meltem; Onaral, Banu

2017-10-01

Functional Near Infrared Spectroscopy (fNIRS) is an emerging neuroimaging technique that utilizes near infrared light to detect cortical concentration changes of oxy-hemoglobin and deoxy-hemoglobin non-invasively. Using light sources and detectors over the scalp, multi-wavelength light intensities are recorded as time series and converted to concentration changes of hemoglobin via modified Beer-Lambert law. Here, we describe a potential source for systematic error in the calculation of hemoglobin changes and light intensity measurements. Previous system characterization and analysis studies looked into various fNIRS parameters such as type of light source, number and selection of wavelengths, distance between light source and detector. In this study, we have analyzed the contribution of light detector surface area to the overall outcome. Results from Monte Carlo based digital phantoms indicated that selection of detector area is a critical system parameter in minimizing the error in concentration calculations. The findings here can guide the design of future fNIRS sensors. Copyright © 2017 Elsevier Ltd. All rights reserved.

Characteristics of photoconductivity in thallium monosulfide single ...

Indian Academy of Sciences (India)

This work elucidates the photoconductivity (PC) of thallium monosulfide single crystals. Results are obtained in the 77-300 K temperature range, 1500-4500 V lx excitation intensity, 6-18 V applied voltage, and in the 640-1500 nm wavelength range. Both the ac-photoconductivity (ac-PC) and the spectral distribution of the ...

Ultrafast Photoconductivity of Graphene Nanoribbons and Carbon Nanotubes

DEFF Research Database (Denmark)

Jensen, Søren A.; Ulbricht, Ronald; Narita, Akimitsu

2013-01-01

carbon nanotubes (CNTs) with a similar bandgap energy. Transient photoconductivities of both materials were measured using time-resolved terahertz spectroscopy, allowing for contact-free measurements of complex-valued photoconductivity spectra with subpicosecond time-resolution. We show that, while...

Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon

International Nuclear Information System (INIS)

Herlufsen, Sandra; Schmidt, Jan; Hinken, David; Bothe, Karsten; Brendel, Rolf

2008-01-01

We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconductance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2008], Wiley Periodicals, Inc.)

Spectral memory of photoconduction of high-resistance ZnSe

International Nuclear Information System (INIS)

Gorya, O.S.; Kovalev, L.E.; Korotkov, V.A.; Malikova, L.V.; Simashkevich, A.V.

1989-01-01

Relaxation of photoconductivity of ZnSr crystal in case of a photoconductivity burst when exposing a sample to light with quantum energy E=1.305 eV after preliminary excitation by light with quantum energy 2.61 eV. The phenomenon of nonequilibrium photoconductivity considered permitted to suggest a new method for determination of the energy position of local levels in the forbidden band of semiconductors. Investigations carried out permitted to detect in ZnSe acceptors, lying in the forbidden band, as well as deep centers. It is supposed that the effect of spectral memory of photoconductivity of high-ohmic crystals (ZnSe, ZnS, CdS) relates to the existence of defects with metastable states in them

Infrared detectors

CERN Document Server

Rogalski, Antonio

2010-01-01

This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

Thermal noise in mid-infrared broadband upconversion detectors

DEFF Research Database (Denmark)

Barh, Ajanta; Tidemand-Lichtenberg, Peter; Pedersen, Christian

2018-01-01

Low noise detection with state-of-the-art mid-infrared (MIR) detectors (e.g., PbS, PbSe, InSb, HgCdTe) is a primary challenge owing to the intrinsic thermal background radiation of the low bandgap detector material itself. However, researchers have employed frequency upconversion based detectors...... of the noise-equivalent power of an UCD system. In this article, we rigorously analyze the optical power generated by frequency upconversion of the intrinsic black-body radiation in the nonlinear material itself due to the crystals residual emissivity, i.e. absorption. The thermal radiation is particularly...... prominent at the optical absorption edge of the nonlinear material even at room temperature. We consider a conventional periodically poled lithium niobate (PPLN) based MIR-UCD for the investigation. The UCD is designed to cover a broad spectral range, overlapping with the entire absorption edge of the PPLN...

Fast infrared detectors for beam diagnostics with synchrotron radiation

International Nuclear Information System (INIS)

Bocci, A.; Marcelli, A.; Pace, E.; Drago, A.; Piccinini, M.; Cestelli Guidi, M.; De Sio, A.; Sali, D.; Morini, P.; Piotrowski, J.

2007-01-01

Beam diagnostic is a fundamental constituent of any particle accelerators either dedicated to high-energy physics or to synchrotron radiation experiments. All storage rings emit radiations. Actually they are high brilliant sources of radiation: the synchrotron radiation emission covers from the infrared range to the X-ray domain with a pulsed structure depending on the temporal characteristics of the stored beam. The time structure of the emitted radiation is extremely useful as a tool to perform time-resolved experiments. However, this radiation can be also used for beam diagnostic to determine the beam stability and to measure the dimensions of the e - or e + beam. Because of the temporal structure of the synchrotron radiation to perform diagnostic, we need very fast detectors. Indeed, the detectors required for the diagnostics of the stored particle bunches at third generation synchrotron radiation sources and FEL need response times in the sub-ns and even ps range. To resolve the bunch length and detect bunch instabilities, X-ray and visible photon detectors may be used achieving response times of a few picoseconds. Recently, photon uncooled infrared devices optimized for the mid-IR range realized with HgCdTe semiconductors allowed to obtain sub-nanosecond response times. These devices can be used for fast detection of intense IRSR sources and for beam diagnostic. We present here preliminary experimental data of the pulsed synchrotron radiation emission of DAΦNE, the electron positron collider of the LNF laboratory of the INFN, performed with new uncooled IR detectors with a time resolution of a few hundreds of picoseconds

Magneto-photoconductivity of three dimensional topological insulator bismuth telluride

Science.gov (United States)

Cao, Bingchen; Eginligil, Mustafa; Yu, Ting

2018-03-01

Magnetic field dependence of the photocurrent in a 3D topological insulator is studied. Among the 3D topological insulators bismuth telluride has unique hexagonal warping and spin texture which has been studied by photoemission, scanning tunnelling microscopy and transport. Here, we report on low temperature magneto-photoconductivity, up to 7 T, of two metallic bismuth telluride topological insulator samples with 68 and 110 nm thicknesses excited by 2.33 eV photon energy along the magnetic field perpendicular to the sample plane. At 4 K, both samples exhibit negative magneto-photoconductance below 4 T, which is as a result of weak-antilocalization of Dirac fermions similar to the previous observations in electrical transport. However the thinner sample shows positive magneto-photoconductance above 4 T. This can be attributed to the coupling of surface states. On the other hand, the thicker sample shows no positive magneto-photoconductance up to 7 T since there is only one surface state at play. By fitting the magneto-photoconductivity data of the thicker sample to the localization formula, we obtain weak antilocalization behaviour at 4, 10, and 20 K, as expected; however, weak localization behaviour at 30 K, which is a sign of surface states masked by bulk states. Also, from the temperature dependence of phase coherence length bulk carrier-carrier interaction is identified separately from the surface states. Therefore, it is possible to distinguish surface states by magneto-photoconductivity at low temperature, even in metallic samples.

Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

Energy Technology Data Exchange (ETDEWEB)

Kozlov, D. V., E-mail: dvkoz@impras.ru; Rumyantsev, V. V.; Morozov, S. V.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Varavin, V. S.; Mikhailov, N. N.; Dvorestky, S. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Teppe, F. [Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)

2015-12-15

The photoconductivity (PC) spectra of CdHgTe (MCT) solid solutions with a Cd fraction of 17 and 19% are measured. A simple model for calculating the states of doubly charged acceptors in MCT solid solutions, which makes it possible to describe satisfactorily the observed photoconductivity spectra, is proposed. The found lines in the photoconductivity spectra of narrow-gap MCT structures are associated with transitions between the states of both charged and neutral acceptor centers.

Photoconductivity in BiFeO3 thin films

Science.gov (United States)

Basu, S. R.; Martin, L. W.; Chu, Y. H.; Gajek, M.; Ramesh, R.; Rai, R. C.; Xu, X.; Musfeldt, J. L.

2008-03-01

The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW /cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.

Miniature Uncooled Infrared Sensitive Detectors for in Vivo Biomedical Imaging Applications

Energy Technology Data Exchange (ETDEWEB)

Datskos, P. G.; Demos, S. G.; Rajic, S.

1998-06-01

Broadband infrared (OR) radiation detectors have been developed using miniature, inexpensive, mass produced microcantilevers capable of detecting temperature differences as small as lea(-6) K. Microcantilevers made out of semiconductor materials can be used either as uncurled photon or thermal detectors. Mounted on a probe mm in diameter a number of microcantilevers can be accommodated in the working channel of existing endoscopes for in vivo proximity focus measurements inside the human body.

Gerard Kuiper and the Infrared Detector

Science.gov (United States)

Sears, Derek

2013-10-01

The life and contributions of Gerard Kuiper have been documented by Dale Cruikshank in his National Academy of Sciences biography. I will argue that particularly important in this eventful life was Kuiper's war time experiences. Kuiper's wartime role evolved as the war unfolded, but towards the end he was charged by the US military with reporting German progress with war-related technologies and the activities of scientists under Nazi control. He interviewed a great many scientists, including his own PhD mentor (Ejnar Hertzsprung), and when Kuiper was the only person available, he interviewed concentration-camp victims. He carried briefing sheets that identified the technologies being sought by the allies and the major fraction of these involved infrared equipment. He sent back to the USA boxes of documents, and large amounts of equipment, and he stressed to the military his interest in these for his own research. It seems very likely that in this way an effective PbS infrared detector, so critical to Kuiper's career and the future of planetary science, came to the USA and to Robert Cashman's laboratory at Northwestern University. As the war was winding down, Cashman and Kuiper worked together to develop a practical infrared spectrometer for astronomical use. Within months, Kuiper discovered the C02 atmospheres on Mars and Venus.

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Enhanced photoconductivity by melt quenching method for amorphous organic photorefractive materials

Science.gov (United States)

Tsujimura, S.; Fujihara, T.; Sassa, T.; Kinashi, K.; Sakai, W.; Ishibashi, K.; Tsutsumi, N.

2014-10-01

For many optical semiconductor fields of study, the high photoconductivity of amorphous organic semiconductors has strongly been desired, because they make the manufacture of high-performance devices easy when controlling charge carrier transport and trapping is otherwise difficult. This study focuses on the correlation between photoconductivity and bulk state in amorphous organic photorefractive materials to probe the nature of the performance of photoconductivity and to enhance the response time and diffraction efficiency of photorefractivity. The general cooling processes of the quenching method achieved enhanced photoconductivity and a decreased filling rate for shallow traps. Therefore, sample processing, which was quenching in the present case, for photorefractive composites significantly relates to enhanced photorefractivity.

Design of InAs/GaSb superlattice infrared barrier detectors

Science.gov (United States)

Delmas, M.; Rossignol, R.; Rodriguez, J. B.; Christol, P.

2017-04-01

Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is theoretically investigated. Each part of the barrier structures is studied in order to achieve optimal device operation at 150 K and 77 K, in the midwave and longwave infrared domain, respectively. Whatever the spectral domain, nBp structure with a p-type absorbing zone and an n-type contact layer is found to be the most favourable detector architecture allowing a reduction of the dark-current associated with generation-recombination processes. The nBp structures are then compared to pin photodiodes. The MWIR nBp detector with 5 μm cut-off wavelength can operate up to 120 K, resulting in an improvement of 20 K on the operating temperature compared to the pin device. The dark-current density of the LWIR nBp device at 77 K is expected to be as low as 3.5 × 10-4 A/cm2 at 50 mV reverse bias, more than one decade lower than the usual T2SL photodiode. This result, for a device having cut-off wavelength at 12 μm, is at the state of the art compared to the well-known MCT 'rule 07'.

Infrared Illuminated CdZnTe detectors with improved performance

International Nuclear Information System (INIS)

Ivanov, V.; Loutchanski, A.; Dorogov, P.; Khinoverov, S.

2013-06-01

It was found that IR illumination of a properly chosen wavelength and intensity can significantly improve spectrometric characteristics of CdZnTe quasi-hemispherical detectors [1]. Improving of the spectrometric characteristics is due to improvement of uniformity of charge collection by the detector volume. For operation at room temperature the optimal wavelength of IR illumination is about 940 nm, but for operation at lower temperature of -20 deg. C the optimal wavelengths of IR illumination is about 1050 nm. Infrared illumination can be performed using conventional low-power IR LEDs. Application of SMD LEDs allows produce miniature detection probes with IR illuminated CdZnTe detectors. We have fabricated and tested a variety of detection probes with CdZnTe quasi-hemispherical detectors from the smallest with volumes of 1-5 mm 3 to larger with volumes of 1.5 cm 3 and 4.0 cm 3 . The use of IR illumination significantly improves spectrometric characteristics of the probes operating at room temperature, especially probes with detectors of large volumes. The probe with the detector of 4 cm 3 without IR illumination had energy resolution of 24.2 keV at 662 keV and of 12.5 keV with IR illumination. (authors)

Laboratory Measurement of the Brighter-fatter Effect in an H2RG Infrared Detector

Science.gov (United States)

Plazas, A. A.; Shapiro, C.; Smith, R.; Huff, E.; Rhodes, J.

2018-06-01

The “brighter-fatter” (BF) effect is a phenomenon—originally discovered in charge coupled devices—in which the size of the detector point-spread function (PSF) increases with brightness. We present, for the first time, laboratory measurements demonstrating the existence of the effect in a Hawaii-2RG HgCdTe near-infrared (NIR) detector. We use JPL’s Precision Projector Laboratory, a facility for emulating astronomical observations with UV/VIS/NIR detectors, to project about 17,000 point sources onto the detector to stimulate the effect. After calibrating the detector for nonlinearity with flat-fields, we find evidence that charge is nonlinearly shifted from bright pixels to neighboring pixels during exposures of point sources, consistent with the existence of a BF-type effect. NASAs Wide Field Infrared Survey Telescope (WFIRST) will use similar detectors to measure weak gravitational lensing from the shapes of hundreds of million of galaxies in the NIR. The WFIRST PSF size must be calibrated to ≈0.1% to avoid biased inferences of dark matter and dark energy parameters; therefore further study and calibration of the BF effect in realistic images will be crucial.

State density of valence-band tail and photoconductivity amorphous hydrogenated silicon

International Nuclear Information System (INIS)

Golikova, O.A.; Domashevskaya, Eh.P.; Mezdrogina, M.M.; Sorokina, K.L.; Terekhov, V.A.; Trostyanskij, S.N.

1991-01-01

Relation between photoconductivity and g(ε) mobility gap within the range adjoining to the top (mobility end) of valent zone (VZ tail) in a-Si:H film is studied. Stationary photoconductivity within spectral maximum range (χ=0.63μm) at Φ=10 17 photxcm -2 s -1 flow is measured. Density of g(ε) states are controlled using ultrasoft X-ray emission spectroscopy. It is shown, that correlation between photoconductivity and width of VZ tail may reflect the fact of their similar dependence o film heterogeneity: at the increase of share of microholes there occur both expansion of VZ tail and growth of number of respective hydrogen complexes and torn relations which results in drop of photoconductivity

A new generation of small pixel pitch/SWaP cooled infrared detectors

Science.gov (United States)

Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

2015-10-01

Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

MTF measurement and analysis of linear array HgCdTe infrared detectors

Science.gov (United States)

Zhang, Tong; Lin, Chun; Chen, Honglei; Sun, Changhong; Lin, Jiamu; Wang, Xi

2018-01-01

The slanted-edge technique is the main method for measurement detectors MTF, however this method is commonly used on planar array detectors. In this paper the authors present a modified slanted-edge method to measure the MTF of linear array HgCdTe detectors. Crosstalk is one of the major factors that degrade the MTF value of such an infrared detector. This paper presents an ion implantation guard-ring structure which was designed to effectively absorb photo-carriers that may laterally defuse between adjacent pixels thereby suppressing crosstalk. Measurement and analysis of the MTF of the linear array detectors with and without a guard-ring were carried out. The experimental results indicated that the ion implantation guard-ring structure effectively suppresses crosstalk and increases MTF value.

Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990

Science.gov (United States)

Dereniak, Eustace L.; Sampson, Robert E.

1990-09-01

The papers contained in this volume provide an overview of recent advances and the current state of developments in the field of infrared detectors and focal plane arrays. Topics discussed include nickel silicide Schottky-barrier detectors for short-wavelength infrared applications; high performance PtSi linear and focal plane arrays; and multispectral band Schottky-barrier IRSSD for remote-sensing applications. Papers are also presented on the performance of an Insi hybrid focal array; characterization of IR focal plane test stations; GaAs CCD readout for engineered bandgap detectors; and fire detection system for aircraft cargo bays.

Detector location selection based on VIP analysis in near-infrared detection of dural hematoma

Directory of Open Access Journals (Sweden)

Qiuming Sun

2018-03-01

Full Text Available Detection of dural hematoma based on multi-channel near-infrared differential absorbance has the advantages of rapid and non-invasive detection. The location and number of detectors around the light source are critical for reducing the pathological characteristics of the prediction model on dural hematoma degree. Therefore, rational selection of detector numbers and their distances from the light source is very important. In this paper, a detector position screening method based on Variable Importance in the Projection (VIP analysis is proposed. A preliminary modeling based on Partial Least Squares method (PLS for the prediction of dural position μa was established using light absorbance information from 30 detectors located 2.0–5.0 cm from the light source with a 0.1 cm interval. The mean relative error (MRE of the dural position μa prediction model was 4.08%. After VIP analysis, the number of detectors was reduced from 30 to 4 and the MRE of the dural position μa prediction was reduced from 4.08% to 2.06% after the reduction in detector numbers. The prediction model after VIP detector screening still showed good prediction of the epidural position μa. This study provided a new approach and important reference on the selection of detector location in near-infrared dural hematoma detection. Keywords: Detector location screening, Epidural hematoma detection, Variable importance in the projection

High frequency modulation circuits based on photoconductive wide bandgap switches

Science.gov (United States)

Sampayan, Stephen

2018-02-13

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

Linearity of photoconductive GaAs detectors to pulsed electrons

International Nuclear Information System (INIS)

Ziegler, L.H.

1995-01-01

The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined

Infrared Imaging of Cotton Fiber Bundles Using a Focal Plane Array Detector and a Single Reflectance Accessory

Directory of Open Access Journals (Sweden)

Michael Santiago Cintrón

2016-11-01

Full Text Available Infrared imaging is gaining attention as a technique used in the examination of cotton fibers. This type of imaging combines spectral analysis with spatial resolution to create visual images that examine sample composition and distribution. Herein, we report on the use of an infrared instrument equipped with a reflection accessory and an array detector system for the examination of cotton fiber bundles. Cotton vibrational spectra and chemical images were acquired by grouping pixels in the detector array. This technique reduced spectral noise and was employed to visualize cell wall development in cotton fibers bundles. Fourier transform infrared spectra reveal band changes in the C–O bending region that matched previous studies. Imaging studies were quick, relied on small amounts of sample and provided a distribution of the cotton fiber cell wall composition. Thus, imaging of cotton bundles with an infrared detector array has potential for use in cotton fiber examinations.

Photon-Counting Microwave Kinetic Inductance Detectors (MKIDs) for High Resolution Far-Infrared Spectroscopy

Data.gov (United States)

National Aeronautics and Space Administration — We are developing ultrasensitive Microwave Kinetic Inductance Detectors (MKIDs) for high resolution far-infrared spectroscopy applications, with a long-term goal of...

Photoconductivity of oxidized nanostructured PbTe(In) films

International Nuclear Information System (INIS)

Dobrovolsky, A A; Ryabova, L I; Khokhlov, D R; Dashevsky, Z M; Kasiyan, V A

2009-01-01

Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2–300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature

Improved HgCdTe detectors with novel antireflection coating

Science.gov (United States)

Babu, Sachi R.; Hu, Kelley; Manthripragada, Sridhar; Martineau, Robert J.; Kotecki, C. A.; Peters, F. A.; Burgess, A. S.; Krebs, Danny J.; Mott, David B.; Ewin, Audrey J.; Miles, A.; Nguyen, Trang L.; Shu, Peter K.

1996-10-01

The composite infrared spctrometer (CIRS) is an important instrument for the upcoming Cassini mission for sensing infrared (IR) radiation from the Saturanian planetary system. We have delivered a linear, ten element, mercury cadmium telluride (HgCdTe) photoconductive detector array for use on focal plane 3 (FP3), which is responsible for detecting radiation from the 9.1 micrometer to 16.6 micrometer wavelength range. Reliable HgCdTe detectors require robust passivation, a low-stress zinc sulfide (ZnS) anti-reflection (AR) coating with good adhesion, and a proper optical cavity design to smooth out the resonance in the detector spectral response. During the development of CIRS flight array, we have demonstrated the potential of using an in-situ interfacial layer, such as SiN(subscript x), between ZnS and the anodic oxide. Such an interfacial layer drastically improves the adhesion between the ZnS and oxide, without degrading the minority carrier lifetime. We have also demonstrated the feasibility of applying a SiN(subscript x) 'rain coat' layer over the ZnS to prevent moisture and other chemicals from attacking the AR coating, thus improving the long term reliability. This also enables device operation in a hazardous environment. The alumina/epoxy/HgCdTe/oxide/ZnS structure is a complicated multi-cavity optical system. We have developed an extensive device simulation, which enables us to make the optimal choice of individual cavity thickness for minimizing the resonance and maximizing the quantum efficiency. We have also used 0.05 micrometer alumina powder loaded epoxy to minimize the reflections at the epoxy/HgCdTe interface, thus minimizing the resonance.

Alignment enhanced photoconductivity in single wall carbon nanotube films

International Nuclear Information System (INIS)

Liu Ye; Lu Shaoxin; Panchapakesan, Balaji

2009-01-01

In this paper we report, for the first time, the alignment enhanced photoconductivity of single wall carbon nanotube films upon laser illumination. The photoconductivity exhibited an increase, decrease or even 'negative' values when the laser spot was on different positions between contact electrodes, showing a 'position' dependent photoconductivity of partially aligned films of carbon nanotubes. Photon induced charge carrier generation in single wall carbon nanotubes and subsequent charge separation across the metal-carbon nanotube contacts is believed to cause the photoconductivity changes. A net photovoltage of ∼4 mV and a photocurrent of ∼10 μA were produced under the laser intensity of ∼273 mW with a quantum efficiency of ∼7.8% in vacuum. The photocurrent was observed to be in the direction of nanotube alignment. Finally, there was a strong dependence of the polarization of the incident light on the photocurrent and the orientation of the films influenced the dynamics of the rise and fall of the photocurrent. All of these phenomena clearly have significance in the area of design and fabrication of solar cells, micro-opto-mechanical systems and photodetectors based on carbon nanotubes.

Control of persistent photoconductivity in nanostructured InP through morphology design

International Nuclear Information System (INIS)

Monaico, Ed; Postolache, V; Borodin, E; Lupan, O; Tiginyanu, I M; Ursaki, V V; Adelung, R; Nielsch, K

2015-01-01

In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states. (paper)

Laboratory Measurement of the Brighter-fatter Effect in an H2RG Infrared Detector

OpenAIRE

Plazas, A. A.; Shapiro, C.; Smith, R.; Huff, E.; Rhodes, J.

2018-01-01

The "brighter-fatter" (BF) effect is a phenomenon (originally discovered in charge coupled devices) in which the size of the detector point spread function (PSF) increases with brightness. We present, for the first time, laboratory measurements demonstrating the existence of the effect in a Hawaii-2RG HgCdTe near infrared (NIR) detector. We use the Precision Projector Laboratory, a JPL facility for emulating astronomical observations with UV/VIS/NIR detectors, to project about 17,000 point so...

Temperature dependence of photoconductivity at 0.7 eV in single-wall carbon nanotube films

Directory of Open Access Journals (Sweden)

Yukitaka Matsuoka, Akihiko Fujiwara, Naoki Ogawa, Kenjiro Miyano, Hiromichi Kataura, Yutaka Maniwa, Shinzo Suzuki and Yohji Achiba

2003-01-01

Full Text Available Temperature dependence of photoconductivity has been investigated for single-wall carbon nanotube films at 0.7 eV. In order to clarify the effect of atmosphere on photoconductivity, measurements have been performed under helium and nitrogen gas flow in the temperature range from 10 K to room temperature (RT and from 100 K to RT, respectively. Photoconductive response monotonously increases with a decrease in temperature and tends to saturate around 10 K. No clear difference in photoconductive response under different atmosphere was observed. We discuss the mechanism of photoconductivity at 0.7 eV.

High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

International Nuclear Information System (INIS)

Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

1982-01-01

Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H 2 of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H 2 in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H 2 increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H 2 mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H 2 atmosphere in the same apparatus. (author)

An instrumentation amplifier based readout circuit for a dual element microbolometer infrared detector

Science.gov (United States)

de Waal, D. J.; Schoeman, J.

2014-06-01

The infrared band is widely used in many applications to solve problems stretching over very diverse fields, ranging from medical applications like inflammation detection to military, security and safety applications employing thermal imaging in low light conditions. At the heart of these optoelectrical systems lies a sensor used to detect incident infrared radiation, and in the case of this work our focus is on uncooled microbolometers as thermal detectors. Microbolometer based thermal detectors are limited in sensitivity by various parameters, including the detector layout and design, operating temperature, air pressure and biasing that causes self heating. Traditional microbolometers use the entire membrane surface for a single detector material. This work presents the design of a readout circuit amplifier where a dual detector element microbolometer is used, rather than the traditional single element. The concept to be investigated is based on the principle that both elements will be stimulated with a similar incoming IR signal and experience the same resistive change, thus creating a common mode signal. However, such a common mode signal will be rejected by a differential amplifier, thus one element is placed within a negative resistance converter to create a differential mode signal that is twice the magnitude of the comparable single mode signal of traditional detector designs. An instrumentation amplifier is used for the final stage of the readout amplifier circuit, as it allows for very high common mode rejection with proper trimming of the Wheatstone bridge to compensate for manufacturing tolerance. It was found that by implementing the above, improved sensitivity can be achieved.

Photoconduction in silicon rich oxide films

Energy Technology Data Exchange (ETDEWEB)

Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

2009-05-01

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

Mesoporous CdS via Network of Self-Assembled Nanocrystals: Synthesis, Characterization and Enhanced Photoconducting Property.

Science.gov (United States)

Patra, Astam K; Banerjee, Biplab; Bhaumik, Asim

2018-01-01

Semiconduction nanoparticles are intensively studied due to their huge potential in optoelctronic applications. Here we report an efficient chemical route for hydrothermal synthesis of aggregated mesoporous cadmium sulfide (CdS) nanoparticles using supramolecular-assembly of ionic and water soluble sodium salicylate as the capping agent. The nanostructure, mesophase, optical property and photoconductivity of these mesoporous CdS materials have been characterized by using small and wide angle powder X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), N2-sorption, Raman analysis, Fourier transformed infrared (FT-IR), UV-Visible DSR spectroscopy, and photoconductivity measurement. Wide angle XRD pattern and high resolution TEM image analysis suggested that the particle size of the materials is within 10 nm and the nanoparticles are in well-crystallized cubic phase. Mesoporous CdS nanoparticles showed drastically enhanced photoelectrochemical response under visible light irradiation on entrapping a photosensitizer (dye) molecule in the interparticle spaces. Efficient synthesis strategy and the enhanced photo response in the mesoporous CdS material could facilitate the designing of other porous semiconductor oxide/sulfide and their applications in photon-to-electron conversion processes.

High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

Energy Technology Data Exchange (ETDEWEB)

Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

1982-08-01

Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H/sub 2/ of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H/sub 2/ in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H/sub 2/ increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H/sub 2/ mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H/sub 2/ atmosphere in the same apparatus.

A new test facility for the E-ELT infrared detector program

Science.gov (United States)

Lizon, Jean Louis; Amico, Paola; Brinkmann, Martin; Delabre, Bernard; Finger, Gert; Guidolin, Ivan Maria; Guzman, Ronald; Hinterschuster, Renate; Ives, Derek; Klein, Barbara; Quattri, Marco

2016-08-01

During the development of the VLT instrumentation program, ESO acquired considerable expertise in the area of infrared detectors, their testing and optimizing their performance. This can mainly be attributed to a very competent team and most importantly to the availability of a very well suited test facility, namely, IRATEC. This test facility was designed more than 15 years ago, specifically for 1K × 1K detectors such as the Aladdin device, with a maximum field of only 30 mm square. Unfortunately, this facility is no longer suited for the testing of the new larger format detectors that are going to be used to equip the future E-ELT instruments. It is projected that over the next 20 years, there will be of the order of 50-100 very large format detectors to be procured and tested for use with E-ELT first and second generation instruments and VLT third generation instruments. For this reason ESO has initiated the in-house design and construction of a dedicated new IR detector arrays test facility: the Facility for Infrared Array Testing (FIAT). It will be possible to mount up to four 60 mm square detectors in the facility, as well as mosaics of smaller detectors. It is being designed to have a very low thermal background such that detectors with 5.3 μm cut-off material can routinely be tested. The paper introduces the most important use cases for which FIAT is designed: they range from performing routine performance measurements on acquired devices, optimization setups for custom applications (like spot scan intra-pixel response, persistence and surface reflectivity measurements), test of new complex operation modes (e.g. high speed subwindowing mode for low order sensing, flexure control, etc.) and the development of new tests and calibration procedures to support the scientific requirements of the E-ELT and to allow troubleshooting the unexpected challenges that arise when a new detector system is brought online. The facility is also being designed to minimize

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

Science.gov (United States)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

Time Resolved Detection of Infrared Synchrotron Radiation at DAΦNE

International Nuclear Information System (INIS)

Bocci, A.; Marcelli, A.; Drago, A.; Guidi, M. Cestelli; Pace, E.; Piccinini, M.; Sali, D.; Morini, P.; Piotrowski, J.

2007-01-01

Synchrotron radiation is characterized by a very wide spectral emission from IR to X-ray wavelengths and a pulsed structure that is a function of the source time structure. In a storage ring, the typical temporal distance between two bunches, whose duration is a few hundreds of picoseconds, is on the nanosecond scale. Therefore, synchrotron radiation sources are a very powerful tools to perform time-resolved experiments that however need extremely fast detectors. Uncooled IR devices optimized for the mid-IR range with sub-nanosecond response time, are now available and can be used for fast detection of intense IR sources such as synchrotron radiation storage rings. We present here different measurements of the pulsed synchrotron radiation emission at DAΦNE (Double Annular Φ-factory for Nice Experiments), the collider of the Laboratori Nazionali of Frascati (LNF) of the Istituto Nazionale di Fisica Nucleare (INFN), performed with very fast uncooled infrared detectors with a time resolution of a few hundreds of picoseconds. We resolved the emission time structure of the electron bunches of the DAΦNE collider when it works in a normal condition for high energy physics experiments with both photovoltaic and photoconductive detectors. Such a technology should pave the way to new diagnostic methods in storage rings, monitoring also source instabilities and bunch dynamics

Metal nanoparticles triggered persistent negative photoconductivity in silk protein hydrogels

Science.gov (United States)

Gogurla, Narendar; Sinha, Arun K.; Naskar, Deboki; Kundu, Subhas C.; Ray, Samit K.

2016-03-01

Silk protein is a natural biopolymer with intriguing properties, which are attractive for next generation bio-integrated electronic and photonic devices. Here, we demonstrate the negative photoconductive response of Bombyx mori silk protein fibroin hydrogels, triggered by Au nanoparticles. The room temperature electrical conductivity of Au-silk hydrogels is found to be enhanced with the incorporation of Au nanoparticles over the control sample, due to the increased charge transporting networks within the hydrogel. Au-silk lateral photoconductor devices show a unique negative photoconductive response under an illumination of 325 nm, with excitation energy higher than the characteristic metal plasmon resonance band. The enhanced photoconductance yield in the hydrogels over the silk protein is attributed to the photo-oxidation of amino groups in the β-pleated sheets of the silk around the Au nanoparticles followed by the breaking of charge transport networks. The Au-silk nanocomposite does not show any photoresponse under visible illumination because of the localization of excited charges in Au nanoparticles. The negative photoconductive response of hybrid Au-silk under UV illumination may pave the way towards the utilization of silk for future bio-photonic devices using metal nanoparticle platforms.

Nonlinear effects in microwave photoconductivity of two-dimensional electron systems

International Nuclear Information System (INIS)

Ryzhii, V; Suris, R

2003-01-01

We present a model for microwave photoconductivity of two-dimensional electron systems in a magnetic field which describes the effects of strong microwave and steady-state electric fields. Using this model, we derive an analytical formula for the photoconductivity associated with photon- and multi-photon-assisted impurity scattering as a function of the frequency and power of microwave radiation. According to the developed model, the microwave conductivity is an oscillatory function of the frequency of microwave radiation and the cyclotron frequency which becomes zero at the cyclotron resonance and its harmonics. It exhibits maxima and minima (with absolute negative conductivity) at microwave frequencies somewhat different from the resonant frequencies. The calculated power dependence of the amplitude of the microwave photoconductivity oscillations exhibits pronounced sublinear behaviour similar to a logarithmic function. The height of the microwave photoconductivity maxima and the depth of its minima are nonmonotonic functions of the electric field. The possibility of a strong widening of the maxima and minima due to a strong sensitivity of their parameters on the electric field and the presence of strong long-range electric-field fluctuations is pointed to. The obtained dependences are consistent with the results of the experimental observations

Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

Energy Technology Data Exchange (ETDEWEB)

Zhuang, Shendong; Tang, Nujiang; Chen, Zhuo, E-mail: zchen@nju.edu.cn [School of Physics, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, No. 22 Hankou Road, Nanjing, Jiangsu, 210093 (China); Chen, Yan; Xia, Yidong [Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, No. 22 Hankou Road, Nanjing University, Nanjing, Jiangsu, 210093 (China); Xu, Xiaoyong; Hu, Jingguo, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, No. 180 Siwangting Road, Yangzhou, Jiangsu, 225002 (China)

2016-04-15

Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

International Nuclear Information System (INIS)

Zhuang, Shendong; Tang, Nujiang; Chen, Zhuo; Chen, Yan; Xia, Yidong; Xu, Xiaoyong; Hu, Jingguo

2016-01-01

Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

Stability of the spectral responsivity of cryogenically cooled InSb infrared detectors

International Nuclear Information System (INIS)

Theocharous, Evangelos

2005-01-01

The spectral responsivity of two cryogenically cooled InSb detectors was observed to drift slowly with time. The origin of these drifts was investigated and was shown to occur due to a water-ice thin film that was deposited onto the active areas of the cold detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the antireflection coatings deposited on the active areas of the detectors, thus giving rise to the observed drifts. The magnitude of the drifts was drastically reduced by evacuating the detector dewars while baking them at 50 deg. C for approximately 48 h. All InSb detectors have antireflection coatings to reduce the Fresnel reflections and therefore enhance their spectral responsivity. This work demonstrates that InSb infrared detectors should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to InSb detectors mounted in dewars that use rubber O rings since the ingress of moisture was found to be particularly serious in this type of dewar

Mechanism of ultraviolet photoconductivity in zinc oxide nanoneedles

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sanjeev [School of Information and Communication Engineering, and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Gil-Ho [School of Information and Communication Engineering, and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tandon, R P [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2007-11-28

Ultraviolet photoconductivity in zinc oxide (ZnO) nanoneedles grown on the surface of a multilayer structure comprised of ZnO film (50 nm)/Zn layer (20 nm)/ZnO film (2 {mu}m) fabricated on a stainless steel substrate using an unbalanced magnetron sputtering technique is reported. It was observed that the multilayered structure with ZnO nanoneedles exhibited enhanced ultraviolet photoconductivity in comparison to the ZnO films that were without nanoneedles. The enhancement in the photoconductivity is attributed to the increase in the quantum yield of the photogenerated charge carriers due to the presence of nanoneedles. A successive slow photoresponse transient following after a fast rise is due to the establishment of equilibrium between the charge carriers in the conduction band and the trapping centers created due to the shallow defects in the ZnO film. The observed photoresponse is critically analyzed on the basis of trapping levels created by the oxygen species during the high pressure deposition of the ZnO multilayer. Results show the promise of ZnO nanostructures in ultraviolet detection applications. (fast track communication)

Mechanism of ultraviolet photoconductivity in zinc oxide nanoneedles

International Nuclear Information System (INIS)

Kumar, Sanjeev; Kim, Gil-Ho; Sreenivas, K; Tandon, R P

2007-01-01

Ultraviolet photoconductivity in zinc oxide (ZnO) nanoneedles grown on the surface of a multilayer structure comprised of ZnO film (50 nm)/Zn layer (20 nm)/ZnO film (2 μm) fabricated on a stainless steel substrate using an unbalanced magnetron sputtering technique is reported. It was observed that the multilayered structure with ZnO nanoneedles exhibited enhanced ultraviolet photoconductivity in comparison to the ZnO films that were without nanoneedles. The enhancement in the photoconductivity is attributed to the increase in the quantum yield of the photogenerated charge carriers due to the presence of nanoneedles. A successive slow photoresponse transient following after a fast rise is due to the establishment of equilibrium between the charge carriers in the conduction band and the trapping centers created due to the shallow defects in the ZnO film. The observed photoresponse is critically analyzed on the basis of trapping levels created by the oxygen species during the high pressure deposition of the ZnO multilayer. Results show the promise of ZnO nanostructures in ultraviolet detection applications. (fast track communication)

Improved performance of photoconductive gain hybrid UV detector by trap state engineering of ZnO nanoparticles

Science.gov (United States)

Azadinia, M.; Fathollahi, M. R.; Mosadegh, M.; Boroumand, F. A.; Mohajerani, E.

2017-10-01

With the purpose of examining the impact of donor polymer on the performance of nanocomposite photodetectors (PDs) and to better understand the underlying physics, different wide-bandgap semiconducting polymers, poly(N-vinylcarbazole), poly(9, 9-di-n-octylfluorenyl-2, 7-diyl) , and [9,9'-dioctyl-fluorene-2,7-diyl]-copoly[diphenyl-p-tolyl-amine-4,4'-diyl] (BFE), are mixed with ZnO nanoparticles (NPs) to fabricate hybrid UV PDs. Three different polymer matrix nanocomposites were investigated that differ in the electron-trap depth in the nanocomposite and also the carrier tunneling energy at the interface. All the fabricated PDs exhibit strong photoconductive gain characteristics which can be attributed to trapped electron accumulation and band bending at the cathode interface. Experimental results show that the manipulation of the photoactive nanocomposite improves the PD properties simultaneously, namely, the external quantum efficiency (EQE, ˜104%), the maximum detectivity (D*, ˜1013 Jones), and the linear dynamic range (LDR, ˜85 dB). In addition, the gain bandwidth product of the device improves more than 50 times. Furthermore, the effect of the photogenerated carrier profile within the active layer is investigated experimentally by changing the direction of the incident light using a transparent cathode. Interestingly, under illumination through the Al cathode, faster photocurrent response, wider spectral range toward the deep UV region, and higher EQE in relatively low voltages are observed. These considerations might provide a general strategy to fabricate low-cost photoconductive PDs with a reasonably good combination of gain, response speed, LDR, and selectivity.

Liquid helium-cooled MOSFET preamplifier for use with astronomical bolometer

Science.gov (United States)

Goebel, J. H.

1977-01-01

A liquid helium-cooled p-channel enhancement mode MOSFET, the 3N167, is found to have sufficiently low noise for use as a preamplifier with helium-cooled bolometers that are used in infrared astronomy. Its characteristics at 300, 77, and 4.2 K are presented. It is also shown to have useful application with certain photoconductive and photovoltaic infrared detectors.

A polarization-insensitive plasmonic photoconductive terahertz emitter

KAUST Repository

Li, Xurong

2017-11-16

We present a polarization-insensitive plasmonic photoconductive terahertz emitter that uses a two-dimensional array of nanoscale cross-shaped apertures as the plasmonic contact electrodes. The geometry of the cross-shaped apertures is set to maximize optical pump absorption in close proximity to the contact electrodes. The two-dimensional symmetry of the cross-shaped apertures offers a polarization-insensitive interaction between the plasmonic contact electrodes and optical pump beam. We experimentally demonstrate a polarization-insensitive terahertz radiation from the presented emitter in response to a femtosecond optical pump beam and similar terahertz radiation powers compared to previously demonstrated polarization-sensitive photoconductive emitters with plasmonic contact electrode gratings at the optimum optical pump polarization.

Nonlinear, anisotropic, and giant photoconductivity in intrinsic and doped graphene

Science.gov (United States)

Singh, Ashutosh; Ghosh, Saikat; Agarwal, Amit

2018-01-01

We present a framework to calculate the anisotropic and nonlinear photoconductivity for two band systems with application to graphene. In contrast to the usual perturbative (second order in the optical field strength) techniques, we calculate photoconductivity to all orders in the optical field strength. In particular, for graphene, we find the photoresponse to be giant (at large optical field strengths) and anisotropic. The anisotropic photoresponse in graphene is correlated with polarization of the incident field, with the response being similar to that of a half-wave plate. We predict that the anisotropy in the simultaneous measurement of longitudinal (σx x) and transverse (σy x) photoconductivity, with four probes, offers a unique experimental signature of the photovoltaic response, distinguishing it from the thermal-Seebeck and bolometric effects in photoresponse.

Oxidation process of AlOx-based magnetic tunnel junctions studied by photoconductance

NARCIS (Netherlands)

Koller, P.H.P.; Vanhelmont, F.W.M.; Boeve, H.; Lumens, P.G.E.; Jonge, de W.J.M.

2003-01-01

The oxidation process of Co/AlOx/Co magnetic tunnel junctions has been investigated by photoconductance, in addition to traditional transport measurements. The shape of the photoconductance curves is explained within the framework of a simple qualitative model, assuming an oxidation time dependent

Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors

International Nuclear Information System (INIS)

Choi, Hyun-Sik; Jeon, Sanghun

2015-01-01

Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current–voltage, and capacitance–voltage characteristics of IZO–TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This region plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of V o ++ at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region

Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors.

Science.gov (United States)

Irkhin, P; Najafov, H; Podzorov, V

2015-10-19

Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of "gauge effect" in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors.

Picosecond Transient Photoconductivity in Functionalized Pentacene Molecular Crystals Probed by Terahertz Pulse Spectroscopy

Science.gov (United States)

Hegmann, F. A.; Tykwinski, R. R.; Lui, K. P.; Bullock, J. E.; Anthony, J. E.

2002-11-01

We have measured transient photoconductivity in functionalized pentacene molecular crystals using ultrafast optical pump-terahertz probe techniques. The single crystal samples were excited using 800nm, 100fs pulses, and the change in transmission of time-delayed, subpicosecond terahertz pulses was used to probe the photoconducting state over a temperature range from 10 to 300K. A subpicosecond rise in photoconductivity is observed, suggesting that mobile carriers are a primary photoexcitation. At times longer than 4ps, a power-law decay is observed consistent with dispersive transport.

Photoconductivity of Se85-xTe15Hgx thin films

International Nuclear Information System (INIS)

Chaudhary, Neetu; Bahishti, Adam A.; Zulfequar, M.

2012-01-01

The photoconductive properties such as dark conductivity, steady state and transient characteristics of a-Se 85-x Te 15 Hg x thin films, prepared by thermal vacuum evaporation technique have been studied in the temperature range 312-380 K. Analysis of data shows that the activation energy of dark current is greater as compared to the activation energy of photocurrent. The activation energy increases at higher concentration of Hg which shows that the defect density of states decreases. Analysis of intensity dependent photoconductivity shows that the bimolecular recombination is predominant. The transient photoconductivity shows that the carrier lifetime decreases with the increase in Hg concentration and increases at higher concentration of Hg. This decrease is due to the transition trapping process. Further the photosensitivity and carrier lifetime increases at higher concentration of Hg which also confirms that the density of defect states decreases.

Design of a multiband near-infrared sky brightness monitor using an InSb detector.

Science.gov (United States)

Dong, Shu-Cheng; Wang, Jian; Tang, Qi-Jie; Jiang, Feng-Xin; Chen, Jin-Ting; Zhang, Yi-Hao; Wang, Zhi-Yue; Chen, Jie; Zhang, Hong-Fei; Jiang, Hai-Jiao; Zhu, Qing-Feng; Jiang, Peng; Ji, Tuo

2018-02-01

Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

Design of a multiband near-infrared sky brightness monitor using an InSb detector

Science.gov (United States)

Dong, Shu-cheng; Wang, Jian; Tang, Qi-jie; Jiang, Feng-xin; Chen, Jin-ting; Zhang, Yi-hao; Wang, Zhi-yue; Chen, Jie; Zhang, Hong-fei; Jiang, Hai-jiao; Zhu, Qing-feng; Jiang, Peng; Ji, Tuo

2018-02-01

Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

Transient photoconductivity in amorphous semiconductors

International Nuclear Information System (INIS)

Mpawenayo, P.

1997-07-01

Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

Commentary: JWST near-infrared detector degradation— finding the problem, fixing the problem, and moving forward

Directory of Open Access Journals (Sweden)

Bernard J. Rauscher

2012-06-01

Full Text Available The James Webb Space Telescope (JWST is the successor to the Hubble Space Telescope. JWST will be an infrared-optimized telescope, with an approximately 6.5 m diameter primary mirror, that is located at the Sun-Earth L2 Lagrange point. Three of JWST’s four science instruments use Teledyne HgCdTe HAWAII-2RG (H2RG near infrared detector arrays. During 2010, the JWST Project noticed that a few of its 5 μm cutoff H2RG detectors were degrading during room temperature storage, and NASA chartered a “Detector Degradation Failure Review Board” (DD-FRB to investigate. The DD-FRB determined that the root cause was a design flaw that allowed indium to interdiffuse with the gold contacts and migrate into the HgCdTe detector layer. Fortunately, Teledyne already had an improved design that eliminated this degradation mechanism. During early 2012, the improved H2RG design was qualified for flight and JWST began making additional H2RGs. In this article, we present the two public DD-FRB “Executive Summaries” that: (1 determined the root cause of the detector degradation and (2 defined tests to determine whether the existing detectors are qualified for flight. We supplement these with a brief introduction to H2RG detector arrays, some recent measurements showing that the performance of the improved design meets JWST requirements, and a discussion of how the JWST Project is using cryogenic storage to retard the degradation rate of the existing flight spare H2RGs.

Examination of cotton fibers and common contaminants using an infrared microscope and a focal-plane array detector

Science.gov (United States)

The chemical imaging of cotton fibers and common contaminants in fibers is presented. Chemical imaging was performed with an infrared microscope equipped with a Focal-Plane Array (FPA) detector. Infrared spectroscopy can provide us with information on the structure and quality of cotton fibers. In a...

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

Science.gov (United States)

Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

2016-09-01

In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

Can graphene make better HgCdTe infrared detectors?

Directory of Open Access Journals (Sweden)

Shi Yanli

2011-01-01

Full Text Available Abstract We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred easily onto HgCdTe (MCT thin wafers at room temperature. The proposed technique does not cause any thermal and mechanical damages to the MCT wafers. It is found that the averaged light transmittance of the graphene film on MCT thin wafer is about 80% in the mid-infrared bandwidth at room temperature and 77 K. Moreover, we find that the electrical conductance of the graphene film on the MCT substrate is about 25 times larger than that of the MCT substrate at room temperature and 77 K. These experimental findings suggest that, from a physics point of view, graphene can be utilized as transparent electrodes as a replacement for metal electrodes while producing better and cheaper MCT infrared detectors.

Analysis of the performance capability of an infrared interior intrusion detector

International Nuclear Information System (INIS)

Dunn, D.R.

1977-01-01

Component performances are required by the LLL assessment procedure for material control and accounting (MC and A) systems. Monitors are an example of an MC and A component whose functions are to process measurements or observations for purposes of detecting abnormalities. This report develops a methodology for characterizing the performance of a class of infrared (IR) interior intrusion monitors or detectors. The methodology is developed around a specific commercial IR detector, the InfrAlarm, manufactured by Barnes Engineering Company (Models 19-124 and 19-115A). Statistical detection models for computing probabilities of detection and false alarms were derived, and the performance capability of the InfrAlarm IR detector was shown using these measures. The results obtained in the performance analysis show that the detection capability of the InfrAlarm is excellent (approx. 1), with very low false alarm rates, for a wide range in target characteristics. These results should be representative and particularly for non-hostile environments

Photo-Ultrasonic Study of Extrinsic Photoconductivity in N-Gallium Arsenide

Science.gov (United States)

Bradshaw, Randall Grant

We have measured the velocity of piezoelectrically -active, ultrasonic shear waves between 1.5 K and 68 K for undoped and for oxygen-doped n-type GaAs, during and after illumination at 4.2 K. The results reveal photoconductivity, persistent photoconductivity, and thermally stimulated conductivity. In both samples the Fermi level in the dark is controlled by excess non-shallow donors near 0.2 eV below the conduction band. Analysis of these effects in oxygen-doped material indicates that there are mid-gap and much shallower photoionizable levels and that there is an electron trap near 20 meV below the conduction band. The undoped n-GaAs sample exhibits photoconductivity quenching with photons in the range 0.95-1.26 eV which, by analysis of the quenching rate, is attributed to the EL2 defect. In addition, levels with large hole capture coefficients have been detected.

Photoconductivity of composite structures based on porous SnO2 sensitized with CdSe nanocrystals

International Nuclear Information System (INIS)

Drozdov, K. A.; Kochnev, V. I.; Dobrovolsky, A. A.; Vasiliev, R. B.; Babynina, A. V.; Rumyantseva, M. N.; Gaskov, A. M.; Ryabova, L. I.; Khokhlov, D. R.

2013-01-01

The introduction of CdSe nanocrystals (colloidal quantum dots) into a porous SnO 2 matrix brings about the appearance of photoconductivity in the structures. Sensitization is a consequence of charge exchange between the quantum dots and the matrix. Photoconductivity spectral measurements show that the nanocrystals embedded into the matrix are responsible for the optical activity of the structure. The photoconductivity of the structures sensitized with different-sized quantum dots is studied in the temperature range from 77 to 300 K. It is shown that the maximum photoconductivity is attained by introducing nanocrystals of the minimum size (2.7 nm). The mechanisms of charge-carrier transport in the matrix and the charge-exchange kinetics are discussed.

Transient photoconductive gain in a-Si:H devices and its applications in radiation detection

International Nuclear Information System (INIS)

Lee, H.K.; Suh, T.S.; Choe, B.Y.; Shinn, K.S.; Perez-Mendez, V.

1997-01-01

Using the transient behavior of the photoconductive-gain mechanism, a signal gain in radiation detection with a-Si:H devices may be possible. The photoconductive gain mechanism in two types of hydrogenated amorphous silicon devices, p-i-n and n-i-n configurations, was investigated in connection with applications to radiation detection. Photoconductive gain was measured in two time scales: one for short pulses of visible light ( 2 . Various gain results are discussed in terms of the device structure, applied bias and dark-current density. (orig.)

Simulation of photoconductive antennas for terahertz radiation

Directory of Open Access Journals (Sweden)

Carlos Criollo

2015-01-01

Full Text Available Simulation of terahertz (THz emission based on PC antennas imposes a challenge to couple the semiconductor carrier phenomena, optical transport and the THz energy transport. In this paper a Multi-physics simulation for coupling these phenomena using COMSOL Multi-physics 4.3b is introduced. The main parameters of THz photoconductive (PC antenna as THz emitter have been reviewed and discussed. The results indicate the role of each parameter in the resulting photocurrent waveform and THz frequency: The radiated THz photocurrent waveform is determined by the photoconductive gap (the separation between the metallic electrodes, the incident laser illumination and the DC excitation voltage; while the THz frequency depends on the dipole length. The optimization of these parameters could enhance the emission. The simulations extend the advance of compact and cost-effective THz emitters.

Advances in SELEX ES infrared detectors for space and astronomy

Science.gov (United States)

Knowles, P.; Hipwood, L.; Baker, I.; Weller, H.

2017-11-01

Selex ES produces a wide range of infrared detectors from mercury cadmium telluride (MCT) and triglycine sulfate (TGS), and has supplied both materials into space programmes spanning a period of over 40 years. Current development activities that underpin potential future space missions include large format arrays for near- and short-wave infrared (NIR and SWIR) incorporating radiation-hard designs and suppression of glow. Improved heterostructures are aimed at the reduction of dark currents and avalanche photodiodes (APDs), and parallel studies have been undertaken for low-stress MCT array mounts. Much of this development work has been supported by ESA, UK Space, and ESO, and some has been performed in collaboration with the UK Astronomy Technology Centre and E2V. This paper focuses on MCT heterostructure developments and novel design elements in silicon read-out chips (ROICs). The 2048 x 2048 element, 17um pitch ROIC for ESA's SWIR array development forms the basis for the largest cooled infrared detector manufactured in Europe. Selex ES MCT is grown by metal organic vapour phase epitaxy (MOVPE), currently on 75mm diameter GaAs substrates. The MCT die size of the SWIR array is 35mm square and only a single array can be printed on the 75mm diameter wafer, utilising only 28% of the wafer area. The situation for 100mm substrates is little better, allowing only 2 arrays and 31% utilisation. However, low cost GaAs substrates are readily available in 150mm diameter and the MCT growth is scalable to this size, offering the real possibility of 6 arrays per wafer with 42% utilisation. A similar 2k x 2k ROIC is the goal of ESA's NIR programme, which is currently in phase 2 with a 1k x 1k demonstrator, and a smaller 320 x 256 ROIC (SAPHIRA) has been designed for ESO for the adaptive optics application in the VLT Gravity instrument. All 3 chips have low noise source-follower architecture and are enabled for MCT APD arrays, which have been demonstrated by ESO to be capable of

Paradoxes of photoconductive target and optical control of secondary ion yield

International Nuclear Information System (INIS)

Rokakh, A. G.; Matasov, M. D.

2010-01-01

This study of the photoconductivity of semiconductors, in particular, cadmium chalcogenides as materials for targets of vacuum image converters followed the path of overcoming paradoxes. The concepts developed by the classics of photoelectricity also help to understand the paradoxes of the new secondary-ion photoelectric effect, especially, its spectral characteristic. The optical channel of secondary ion yield control via a photoconductive target opens the way to a new branch of nanotechnology, i.e., optoionics.

Photoconductivity of amorphous silicon-rigorous modelling

International Nuclear Information System (INIS)

Brada, P.; Schauer, F.

1991-01-01

It is our great pleasure to express our gratitude to Prof. Grigorovici, the pioneer of the exciting field of amorphous state by our modest contribution to this area. In this paper are presented the outline of the rigorous modelling program of the steady-state photoconductivity in amorphous silicon and related materials. (Author)

nBn Infrared Detector Containing Graded Absorption Layer

Science.gov (United States)

Gunapala, Sarath D.; Ting, David Z.; Hill, Cory J.; Bandara, Sumith V.

2009-01-01

It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

Photoconductivity of nanowires that are self-assembled from chiral porphyrins

Science.gov (United States)

Menko, J. G.; Smith, W. F.; Lu, Y.; Johnson, A. T.; Iavicoli, P.

2010-03-01

Recently synthesized chiral porphyrin moleculesfootnotetextM. Linares, P. Iavicoli, K. Psychogyiopoulou, D. Beljonne, S. De Feyter, D. B. Amabilino, and R. Lazzaroni, Langmuir 2008, 24, 9566-9574. in a methlocyclohexane solvent self-assemble into aggregates which appear as a network of nanoscale filaments when deposited onto oxidized silicon. We have shown in preliminary experiments conducted in air that the aggregates are photoconductive, with an action spectrum (photoconductivity vs. wavelength) that matches the in-solution absorbance curve. We discuss these results, and also experiments conducted in a dry nitrogen environment.

Detector with internal gain for short-wave infrared ranging applications

Science.gov (United States)

Fathipour, Vala; Mohseni, Hooman

2017-09-01

Abstarct.Highly sensitive photon detectors are regarded as the key enabling elements in many applications. Due to the low photon energy at the short-wave infrared (SWIR), photon detection and imaging at this band are very challenging. As such, many efforts in photon detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. To solve these problems, we have developed an electron-injection (EI) technique. The significance of this detection mechanism is that it can provide both high efficiency and high sensitivity at room temperature, a condition that is very difficult to achieve in conventional SWIR detectors. An EI detector offers an overall system-level sensitivity enhancement due to a feedback stabilized internal avalanche-free gain. Devices exhibit an excess noise of unity, operate in linear mode, require bias voltage of a few volts, and have a cutoff wavelength of 1700 nm. We review the material system, operating principle, and development of EI detectors. The shortcomings of the first-generation devices were addressed in the second-generation detectors. Measurement on second-generation devices showed a high-speed response of ˜6 ns rise time, low jitter of less than 20 ps, high amplification of more than 2000 (at optical power levels larger than a few nW), unity excess noise factor, and low leakage current (amplified dark current ˜10 nA at a bias voltage of -3 V and at room temperature. These characteristics make EI detectors a good candidate for high-resolution flash light detection and ranging (LiDAR) applications with millimeter scale depth resolution at longer ranges compared with conventional p-i-n diodes. Based on our experimentally measured device characteristics, we compare the performance of the EI detector with commercially available linear mode InGaAs avalanche photodiode (APD) as well as a p-i-n diode using a theoretical model. Flash LiDAR images obtained by our model show that the EI

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1990-01-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

Subnanosecond photoconductive switching in GaAs

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

Utilization of photoconductive gain in a-Si:H devices for radiation detection

International Nuclear Information System (INIS)

Lee, H.K.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.

1995-05-01

The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light ( 2 . Various gain results are discussed in terms of the device structure, applied bias and dark current

Improving Photoconductance of Fluorinated Donors with Fluorinated Acceptors

Energy Technology Data Exchange (ETDEWEB)

Garner, Logan E.; Larson, Bryon; Oosterhout, Stefan; Owczarczyk, Zbyslaw; Olson, Dana C.; Kopidakis, Nikos; Boltalina, Olga V.; Strauss, Steven H.; Braunecker, Wade A.

2016-11-21

This work investigates the influence of fluorination of both donor and acceptor materials on the generation of free charge carriers in small molecule donor/fullerene acceptor BHJ OPV active layers. A fluorinated and non-fluorinated small molecule analogue were synthesized and their optoelectronic properties characterized. The intrinsic photoconductance of blends of these small molecule donors was investigated using time-resolved microwave conductivity. Blends of the two donor molecules with a traditional non-fluorinated fullerene (PC70BM) as well as a fluorinated fullerene (C60(CF3)2-1) were investigated using 5% and 50% fullerene loading. We demonstrate for the first time that photoconductance in a 50:50 donor:acceptor BHJ blend using a fluorinated fullerene can actually be improved relative to a traditional non-fluorinated fullerene by fluorinating the donor molecule as well.

Giant Persistent Photoconductivity of the WO3 Nanowires in Vacuum Condition

Directory of Open Access Journals (Sweden)

Huang Kai

2011-01-01

Full Text Available Abstract A giant persistent photoconductivity (PPC phenomenon has been observed in vacuum condition based on a single WO3 nanowire and presents some interesting results in the experiments. With the decay time lasting for 1 × 104 s, no obvious current change can be found in vacuum, and a decreasing current can be only observed in air condition. When the WO3 nanowires were coated with 200 nm SiO2 layer, the photoresponse almost disappeared. And the high bias and high electric field effect could not reduce the current in vacuum condition. These results show that the photoconductivity of WO3 nanowires is mainly related to the oxygen adsorption and desorption, and the semiconductor photoconductivity properties are very weak. The giant PPC effect in vacuum condition was caused by the absence of oxygen molecular. And the thermal effect combining with oxygen re-adsorption can reduce the intensity of PPC.

Mechanooptic Regulation of Photoconduction in Functionalized Carbon Nanotubes Decorated with Platinum

Directory of Open Access Journals (Sweden)

C. Mercado-Zúñiga

2014-01-01

Full Text Available The observation of photoconduction and nonlinear optical absorption on functionalized multiwall carbon nanotubes decorated with platinum is reported. The samples were prepared by a chemical vapor deposition method. The electrical conductivity of the carbon nanotubes seems to be decreased by the functionalization process; but this property is strongly enhanced after the incorporation of platinum particles. Nonresonant photoconductive experiments at 532 nm and 445 nm wavelengths allow us to detect a selective participation of the platinum to the photoelectrical response. A mechanooptic effect based on Fresnel reflection was obtained through a photoconductive modulation induced by the rotation of a silica substrate where the samples were deposited as a thin film. A two-photon absorption process was identified as the main physical mechanism responsible for the nonlinear optical absorption. We consider that important changes in the nonlinear photon interactions with carbon nanotubes can be related to the population losses derived from phonons and the detuning of the frequency originated by functionalization.

Fast infrared array spectrometer with a thermoelectrically cooled 160-element PbSe detector

International Nuclear Information System (INIS)

Ji Jun; Gore, Jay P.; Sivathanu, Yudaya R.; Lim, Jongmook

2004-01-01

A fast infrared array spectrometer (FIAS) with a thermoelectrically cooled 160-element PbSe detector was demonstrated using measurements of instantaneous infrared radiation intensities simultaneously over the 1.8-4.9 μm wavelength range at a sampling rate of 390 Hz. A three-point second-degree Lagrange interpolation polynomial was constructed to calibrate the FIAS because of the nonlinear response of the infrared array detector to the incident radiation beam. This calibration method gave excellent measurements of blackbody radiation spectra except for a narrow band at wavelength of 4.3 μm due to absorption by room carbon dioxide, which is one of the two major gas radiation peaks (2.7 and 4.3 μm) from the lean premixed hydrocarbon/air combustion products in the midinfrared spectrum. Therefore, the absorption coefficient of room carbon dioxide was conveniently measured on site with the blackbody reference source, and was used in the calibration of the FIAS and also in the calculations of the radiation spectra. Blackbody tests showed that this procedure was effective in correcting for the room carbon dioxide absorption in the radiation spectra measured by the FIAS. For an example of its application, the calibrated FIAS was used to measure spectral radiation intensities from three lean premixed laminar flames and a premixed turbulent jet flame for which reference data with a grating spectrometer were available for comparison. The agreement between the FIAS measurements and the reference data was excellent

Split detector

International Nuclear Information System (INIS)

Cederstrand, C.N.; Chism, H.R.

1982-01-01

A gas analyzer is disclosed which provides a dual channel capability for the simultaneous determination of the presence and concentration of two gases in a stream of sample gas and which has a single infrared source, a single sample cell, two infrared bandpass filters, and two infrared detectors. A separator between the filters and detectors prevents interchange of radiation between the filters. The separator is positioned by fitting it in a slot

Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

International Nuclear Information System (INIS)

Torres-Torres, C.; García-Cruz, M.L.; Castañeda, L.; Rangel Rojo, R.; Tamayo-Rivera, L.; Maldonado, A.; Avendaño-Alejo, M.

2012-01-01

Chromium doped zinc oxide thin solid films were deposited on soda–lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol–gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: ► Enhancement in photoluminescence for chromium doped zinc oxide films is presented. ► A strong and ultrafast optical Kerr effect seems to result from quantum confinement. ► Photoconductive properties for optical and optoelectronic functions were observed.

Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Torres-Torres, C., E-mail: crstorres@yahoo.com.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, Mexico, DF 07738 (Mexico); Garcia-Cruz, M.L. [Centro de Investigacion en Dispositivos Semiconductores, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Castaneda, L., E-mail: luisca@sirio.ifuap.buap.mx [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Rangel Rojo, R. [CICESE/Depto. de Optica, A. P. 360, Ensenada, BC 22860 (Mexico); Tamayo-Rivera, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Mexico, DF 01000 (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN-SEES, A. P. 14740, Mexico DF 07000 (Mexico); Avendano-Alejo, M., E-mail: imax_aa@yahoo.com.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, A. P. 70-186, 04510, DF (Mexico); and others

2012-04-15

Chromium doped zinc oxide thin solid films were deposited on soda-lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol-gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: Black-Right-Pointing-Pointer Enhancement in photoluminescence for chromium doped zinc oxide films is presented. Black-Right-Pointing-Pointer A strong and ultrafast optical Kerr effect seems to result from quantum confinement. Black-Right-Pointing-Pointer Photoconductive properties for optical and optoelectronic functions were observed.

Structural, photoconductivity, and dielectric studies of polythiophene-tin oxide nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Murugavel, S., E-mail: starin85@gmail.com; Malathi, M., E-mail: mmalathi@vit.ac.in

2016-09-15

Highlights: • Synthesis of polythiophene-tin oxide nanocomposites confirmed by FTIR and EDAX. • SEM shows SnO{sub 2} nanoparticles embedded within polythiophene matrix. • Stability and isoelectric point suggest nanoparticle–matrix interaction. • High dielectric constant due to high Maxwell–Wagner interfacial polarization. - Abstract: Polythiophene-tinoxide (PT-SnO{sub 2}) nanocomposites were prepared by in situ chemical oxidative polymerization, in the presence of various concentrations of SnO{sub 2} nanoparticles. Samples were characterized by X-ray diffraction, Fourier-transform infrared spectroscopy, thermogravimetric analysis, X-ray photoelectron spectroscopy and Zeta potential measurements. Morphologies and elemental compositions were investigated by transmission electron microscopy, field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy. The photoconductivity of the nanocomposites was studied by field-dependent dark and photo conductivity measurements. Their dielectric properties were investigated using dielectric spectroscopy, in the frequency range of 1kHz–1 MHz. The results indicated that the SnO{sub 2} nanoparticles in the PT-SnO{sub 2} nanocomposite were responsible for its enhanced dielectric performance.

Photoconductivity of reduced graphene oxide and graphene oxide composite films

International Nuclear Information System (INIS)

Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

2012-01-01

A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

Science.gov (United States)

Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

2011-06-10

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

35-kV GaAs subnanosecond photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

1990-12-01

Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

Numerical simulation of terahertz generation and detection based on ultrafast photoconductive antennas

Science.gov (United States)

Chen, Long-chao; Fan, Wen-hui

2011-08-01

The numerical simulation of terahertz generation and detection in the interaction between femtosecond laser pulse and photoconductive material has been reported in this paper. The simulation model based on the Drude-Lorentz theory is used, and takes into account the phenomena that photo-generated electrons and holes are separated by the external bias field, which is screened by the space-charge field simultaneously. According to the numerical calculation, the terahertz time-domain waveforms and their Fourier-transformed spectra are presented under different conditions. The simulation results indicate that terahertz generation and detection properties of photoconductive antennas are largely influenced by three major factors, including photo-carriers' lifetime, laser pulse width and pump laser power. Finally, a simple model has been applied to simulate the detected terahertz pulses by photoconductive antennas with various photo-carriers' lifetimes, and the results show that the detected terahertz spectra are very different from the spectra radiated from the emitter.

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

Energy Technology Data Exchange (ETDEWEB)

Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

2014-07-14

In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 300 K and D*(λ) = 5 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 250 K, which is easily achievable with a one stage TE cooler.

Characterization of memory and measurement history in photoconductivity of nanocrystal arrays

Science.gov (United States)

Fairfield, Jessamyn A.; Dadosh, Tali; Drndic, Marija

2010-10-01

Photoconductivity in nanocrystal films has been previously characterized, but memory effects have received little attention despite their importance for device applications. We show that the magnitude and temperature dependence of the photocurrent in CdSe/ZnS core-shell nanocrystal arrays depends on the illumination and electric field history. Changes in photoconductivity occur on a few-hour timescale, and subband gap illumination of nanocrystals prior to measurements modifies the photocurrent more than band gap illumination. The observed effects can be explained by charge traps within the band gap that are filled or emptied, which may alter nonradiative recombination processes and affect photocurrent.

Fabrication of radiation detectors with HgI2 crystals grown from a solution

International Nuclear Information System (INIS)

Friant, Alain; Mellet, Jean; Saliou, Charles; Mohammed Brahim, Tayeb.

1979-01-01

Mercuric Iodide crystals grown from a solution of molecular complexes with dimethylsulfoxide have been evaluated as γ-ray and X-ray room temperature detectors. Compared with materials grown from the vapor phase these crystals are characterized by a larger size, a lower level of native defects, but a higher impurity level. Detector technology, X-ray and γ-ray (up to 662 keV) detection properties and characterization measurements (T.S.C., photoconductivity, photovoltaic effect) are described. The effect of light on crystal properties is briefly discussed [fr

Photoconducting hybrid perovskite containing carbazole moiety as the organic layer: Fabrication and characterization

International Nuclear Information System (INIS)

Deng Meng; Wu Gang; Cheng Siyuan; Wang Mang; Borghs, Gustaaf; Chen Hongzheng

2008-01-01

PbCl 2 -based thin films of perovskite structure with hole-transporting carbazole derivatives as the organic layer were successfully prepared by spin-coating from dimethylformamide solution containing stoichiometric amounts of organic and inorganic moieties. The crystal structure and optical property of the hybrid perovskite were characterized by Fourier transform infrared (FT-IR) spectrum, X-ray diffraction (XRD), UV-vis absorption and photoluminescence (PL). FT-IR spectra confirmed the formation of organic-inorganic hybrid perovskite structure. UV-vis spectra of hybrid perovskite thin films exhibited a wide absorption band in ultraviolet region as well as a sharp peak at 330 nm characteristic of PbCl 2 -based layered perovskite. X-ray diffraction profiles indicated that the layered structure was oriented parallel to the silica glass slide plane. Meanwhile, double-layer photoreceptors of the hybrid perovskite were also fabricated, which showed the enhancement of photoconductivity by carbazole chromophore

Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures

Science.gov (United States)

Ryzhii, V.; Shur, M. S.; Ryzhii, M.; Karasik, V. E.; Otsuji, T.

2018-01-01

We developed a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals materials integrated with a light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR due to the interband absorption. The spatially non-uniform photocurrent generated in the PGLIP repeats (mimics) the non-uniform distribution (image) created by the incident FIR/MIR. The injection of the nonuniform photocurrent into the LED active layer results in the nonuniform NIR/VIR image reproducing the FIR/MIR image. The PGL and the entire layer structure are not deliberately partitioned into pixels. We analyze the characteristics of such pixelless PGLIP-LED up-converters and show that their image contrast transfer function and the up-conversion efficiency depend on the PGL lateral resistivity. The up-converter exhibits high photoconductive gain and conversion efficiency when the lateral resistivity is sufficiently high. Several teams have successfully demonstrated the large area PGLs with the resistivities varying in a wide range. Such layers can be used in the pixelless PGLIP-LED image up-converters. The PGLIP-LED image up-converters can substantially surpass the image up-converters based on the quantum-well infrared photodetector integrated with the LED. These advantages are due to the use of the interband FIR/NIR absorption and a high photoconductive gain in the GLIPs.

Infra-red signature neutron detector

Science.gov (United States)

Bell, Zane William [Oak Ridge, TN; Boatner, Lynn Allen [Oak Ridge, TN

2009-10-13

A method of detecting an activator, the method including impinging with an activator a receptor material that includes a photoluminescent material that generates infrared radiation and generation a by-product of a nuclear reaction due to the activator impinging the receptor material. The method further includes generating light from the by-product via the Cherenkov effect, wherein the light activates the photoluminescent material so as to generate the infrared radiation. Identifying a characteristic of the activator based on the infrared radiation.

Controlling Photoconductivity in PBI Films by Supramolecular Assembly.

Science.gov (United States)

Draper, Emily R; Archibald, Lewis J; Nolan, Michael C; Schweins, Ralf; Zwijnenburg, Martijn A; Sproules, Stephen; Adams, Dave J

2018-03-15

Perylene bisimides (PBIs) self-assemble in solution. The solubility of the PBIs is commonly changed through the choice of substituents at the imide positions. It is generally assumed this substitution does not affect the electronic properties of the PBI, and that the properties of the self-assembled aggregate are essentially that of the isolated molecule. However, substituents do affect the self-assembly, resulting in potentially different packing in the formed aggregates. Here, we show that the photoconductivity of films formed from a library of substituted PBIs varies strongly with the substituent and demonstrate that this is due to the different ways in which they pack. Our results open the possibility for tuning the optoelectronic properties of self-assembled PBIs by controlling the aggregate structure through careful choice of substituent, as demonstrated by us here optimising the photoconductivity of PBI films in this way. © 2018 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

APPROACH TO SYNTHESIS OF PASSIVE INFRARED DETECTORS BASED ON QUASI-POINT MODEL OF QUALIFIED INTRUDER

Directory of Open Access Journals (Sweden)

I. V. Bilizhenko

2017-01-01

Full Text Available Subject of Research. The paper deals with synthesis of passive infra red (PIR detectors with enhanced detection capability of qualified intruder who uses different types of detection countermeasures: the choice of specific movement direction and disguise in infrared band. Methods. We propose an approach based on quasi-point model of qualified intruder. It includes: separation of model priority parameters, formation of partial detection patterns adapted to those parameters and multi channel signal processing. Main Results. Quasi-pointmodel of qualified intruder consisting of different fragments was suggested. Power density difference was used for model parameters estimation. Criteria were formulated for detection pattern parameters choice on the basis of model parameters. Pyroelectric sensor with nine sensitive elements was applied for increasing the signal information content. Multi-channel processing with multiple partial detection patterns was proposed optimized for detection of intruder's specific movement direction. Practical Relevance. Developed functional device diagram can be realized both by hardware and software and is applicable as one of detection channels for dual technology passive infrared and microwave detectors.

Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

Directory of Open Access Journals (Sweden)

Ciura Łukasz

2014-08-01

Full Text Available The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

Influence of infrared stimulation on spectroscopy characteristics of co-planar grid CdZnTe detectors

International Nuclear Information System (INIS)

Fjodorov, V.; Ivanov, V.; Loutchanski, A.

2015-01-01

It was previously found that illumination with monochromatic infrared (IR) light with wavelengths close to the absorption edge of the CdZnTe exert significant positive influence on the spectrometric characteristics of quasi-hemispherical CdZnTe detectors at room temperature. In this paper, preliminary results of IR stimulation on the spectrometric characteristics of coplanar-grid CdZnTe detectors as well as results of further studies of planar and quasi-hemispherical detectors are presented. Coplanar-grid detectors of 10 mm x 10 mm x 10 mm from Redlen Technologies and commercial available IR LEDs with different wavelengths of 800-1000 nm were used in the experiments. Influence of intensity and direction of IR illumination on the detector's characteristics was studied. Analysis of signals shapes from the preamplifiers outputs at registration of alpha particles showed that IR illumination leads to a change in the shapes of these signals. This may indicate changes in electric fields distributions. An improvement in energy resolution at gamma-energy of 662 keV was observed with quasi-hemispherical and co-planar detectors at the certain levels of IR illumination intensity. The most noticeable effect of IR stimulation was observed with quasi-hemispherical detectors. It is due with optimization of charge collection conditions in the quasi-hemispherical detectors under IT stimulation. (authors)

Transient photoconductivity and femtosecond nonlinear optical properties of a conjugated polymer-graphene oxide composite

Energy Technology Data Exchange (ETDEWEB)

Nalla, Venkatram; Ji Wei [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Polavarapu, Lakshminarayana; Manga, Kiran Kumar; Goh, Bee Min; Loh, Kian Ping; Xu Qinghua, E-mail: chmxqh@nus.edu.sg, E-mail: phyjiwei@nus.edu.sg [Department of Chemistry, National University of Singapore, Singapore 117543 (Singapore)

2010-10-15

A water soluble conjugated thiophene polymer, sodium salt of poly[2-(3-thienyl)ethoxy-4-butylsulfonate] (TPP), and graphene oxide (GO) composite film (GO-TPP) device was prepared. Transient photoconductivity measurements were carried out on the GO-TPP composite film using 150 ns laser pulses of 527 nm wavelength. Highly efficient photocurrent generation was observed from the GO-TPP film. The relationships of the film photoconductivity, photocurrent decay time and electron decay times with the incident light intensity were investigated. The photoconductive gain of the film was determined to be greater than 40% and to be independent of the light intensity. Furthermore, the femtosecond nonlinear optical properties of the GO-TPP film were measured using 800 nm femtosecond laser pulses and the composite film exhibited high nonlinear absorption and nonlinear refraction coefficients.

Transient photoconductivity and femtosecond nonlinear optical properties of a conjugated polymer-graphene oxide composite

International Nuclear Information System (INIS)

Nalla, Venkatram; Ji Wei; Polavarapu, Lakshminarayana; Manga, Kiran Kumar; Goh, Bee Min; Loh, Kian Ping; Xu Qinghua

2010-01-01

A water soluble conjugated thiophene polymer, sodium salt of poly[2-(3-thienyl)ethoxy-4-butylsulfonate] (TPP), and graphene oxide (GO) composite film (GO-TPP) device was prepared. Transient photoconductivity measurements were carried out on the GO-TPP composite film using 150 ns laser pulses of 527 nm wavelength. Highly efficient photocurrent generation was observed from the GO-TPP film. The relationships of the film photoconductivity, photocurrent decay time and electron decay times with the incident light intensity were investigated. The photoconductive gain of the film was determined to be greater than 40% and to be independent of the light intensity. Furthermore, the femtosecond nonlinear optical properties of the GO-TPP film were measured using 800 nm femtosecond laser pulses and the composite film exhibited high nonlinear absorption and nonlinear refraction coefficients.

Avalanche photoconductive switching

Science.gov (United States)

Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

Avalanche photoconductive switching

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

1989-01-01

This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

Fullerene-doped conducting polymers: effects of enhanced photoconductivity and quenched photoluminescence

International Nuclear Information System (INIS)

Yoshino, K.; Yin, X.H.; Muro, K.; Kiyomatsu, S.; Morita, S.; Zakhidov, A.A.; Noguchi, T.; Ohnishi, T.

1993-01-01

It is found that fullerenes (C 60 , C 70 ), due to their strong electron accepting abilities can be hole generators in conducting polymers sensitizing photoinduced charge transfer. Here we report that photoconductivity of poly(2,5-dialkoxy-p-phenylene-vinylene) OO-PPV is found to be remarkably enhanced by several orders of magnitude upon introduction of several mol % of C 60 . Positive polarons (P + ) photogenerated with increased efficiency due to autoionization of excitons and/or photopumping from fullerene are considered to be responsible for enhanced photoconductivity. Photoluminescence of polymer is strongly quenched upon C 60 doping due to dissociation of excitons accompanied by electron transfer to fullerene. (orig.)

Plasmonic Nanocone Arrays as Photoconductive and Photovoltaic Metamaterials

DEFF Research Database (Denmark)

Zhukovsky, Sergei; Babicheva, Viktoriia; Evlyuknin, Andrey B.

2014-01-01

Photoconductive and photovolta ic properties of metamaterials comprising plasmonic nanocone arrays embedded in a semiconductor matrix are studied. Under uniform plane-wave illumination, directed photocurrent and electromotive force arise ne ar asymmetrically shaped nanocones. The resulting giant...... photogalvanic effect is a plasmonic analogue of the bulk photovoltaic effect in ferroelectrics....

A kilo-pixel imaging system for future space based far-infrared observatories using microwave kinetic inductance detectors

NARCIS (Netherlands)

Baselmans, J.J.A.; Bueno, J.; Yates, Stephen J.C.; Yurduseven, O.; Llombart Juan, N.; Karatsu, K.; Baryshev, A. M.; Ferrarini, L; Endo, A.; Thoen, D.J.; de Visser, P.J.; Janssen, R.M.J.; Murugesan, V.; Driessen, E.F.C.; Coiffard, G.; Martin-Pintado, J.; Hargrave, P.; Griffin, M.

2017-01-01

Aims. Future astrophysics and cosmic microwave background space missions operating in the far-infrared to millimetre part of the spectrum will require very large arrays of ultra-sensitive detectors in combination with high multiplexing factors and efficient low-noise and low-power readout systems.

A kilo-pixel imaging system for future space based far-infrared observatories using microwave kinetic inductance detectors

NARCIS (Netherlands)

Baselmans, J. J. A.; Bueno, J.; Yates, S. J. C.; Yurduseven, O.; Llombart, N.; Karatsu, K.; Baryshev, A. M.; Ferrari, L.; Endo, A.; Thoen, D. J.; de Visser, P. J.; Janssen, R. M. J.; Murugesan, V.; Driessen, E. F. C.; Coiffard, G.; Martin-Pintado, J.; Hargrave, P.; Griffin, M.

Aims: Future astrophysics and cosmic microwave background space missions operating in the far-infrared to millimetre part of the spectrum will require very large arrays of ultra-sensitive detectors in combination with high multiplexing factors and efficient low-noise and low-power readout systems.

Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

Directory of Open Access Journals (Sweden)

Jakub Pekárek

2016-09-01

Full Text Available This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5 × 10 5 and 8 × 10 6 photons per mm 2 per second. It was observed that polarization occurs at an X-ray flux higher than 3 × 10 6 mm − 2 ·s − 1 . Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect.

Numerical investigation of steady-state thermal behavior of an infrared detector cryo chamber

Directory of Open Access Journals (Sweden)

Singhal Mayank

2017-01-01

Full Text Available An infrared (IR detector is simply a transducer of radiant energy, converting radiant energy into a measurable form. Since radiation does not rely on visible light, it offers the possibility of seeing in the dark or through obscured conditions, by detecting the IR energy emitted by objects. One of the prime applications of IR detector systems for military use is in target acquisition and tracking of projectile systems. The IR detectors also have great potential in commercial market. Typically, IR detectors perform best when cooled to cryogenic temperatures in the range of nearly 120 K. However, the necessity to operate in such cryogenic regimes makes the application of IR detectors extremely complex. Further, prior to proceeding on to a full blown transient thermal analysis it is worthwhile to perform a steady-state numerical analysis for ascertaining the effect of variation in viz., material, gas conduction coefficient, h, emissivity, ε, on the temperature profile along the cryo chamber length. This would enable understanding the interaction between the cryo chamber and its environment. Hence, the present work focuses on the development of steady-state numerical models for thermal analysis of IR cryo chamber using MATLAB. The numerical results show that gas conduction coefficient has marked influence on the temperature profile of the cryo chamber whereas the emissivity has a weak effect. The experimental validation of numerical results has also been presented.

Photoconductive switch enhancements for use in Blumlein pulse generators

International Nuclear Information System (INIS)

Davanloo, F.; Park, H.; Collins, C. B.; Agee, F. J.

1999-01-01

Stacked Blumlein pulse generators developed at the University of Texas at Dallas have produced high-power waveforms with risetimes and repetition rates in the range of 0.2-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap or photoconductive switch. Adaptation of the design has enabled the stacked Blumleins to produce 80 MW, nanosecond pulses with risetimes better than 200 ps into nominally matched loads. The device has a compact line geometry and is commutated by a single GaAs photoconductive switch triggered by a low power laser diode array. Our current investigations involve the switch characteristics that affect the broadening of the current channels in the avalanche, pre-avalanche seedings, the switch lifetime and the durability. This report presents the progress toward improving the GaAs switch operation and lifetime in stacked Blumlein pulsers. Advanced switch treatments including diamond film overcoating are implemented and discussed

Resonant detectors and focal plane arrays for infrared detection

Science.gov (United States)

Choi, K. K.; Allen, S. C.; Sun, J. G.; DeCuir, E. A.

2017-08-01

We are developing resonator-QWIPs for narrowband and broadband long wavelength infrared detection. Detector pixels with 25 μm and 30 μm pitches were hybridized to fanout circuits and readout integrated electronics for radiometric measurements. With a low to moderate doping of 0.2-0.5 × 1018 cm-3 and a thin active layer thickness of 0.6-1.3 μm, we achieved a quantum efficiency between 25 and 37% and a conversion efficiency between of 15 and 20%. The temperature at which photocurrent equals dark current is about 65 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 20 mK at 2 ms integration time and 60 K operating temperature. This good performance confirms the advantages of the resonator-QWIP approach.

Temperature dependence of dc photoconductivity in CdTe thin films

Indian Academy of Sciences (India)

intensity which supports the sublinear relationship of photoconductivity with the ... materials in recent times because of their successful application in the fabrication of solar ... The light intensity was measured with a sensitive Aplab luxmeter.

Extended short wavelength infrared HgCdTe detectors on silicon substrates

Science.gov (United States)

Park, J. H.; Hansel, D.; Mukhortova, A.; Chang, Y.; Kodama, R.; Zhao, J.; Velicu, S.; Aqariden, F.

2016-09-01

We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength 2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

Improvement of Infrared Detectors for Tissue Oximetry using Black Silicon Nanostructures

DEFF Research Database (Denmark)

Petersen, Søren Dahl; Davidsen, Rasmus Schmidt; Alcala, Lucia R.

2014-01-01

We present a nanostructured surface, made of dry etched black silicon, which lowers the reflectance for light incident at all angles. This surface is fabricated on infrared detectors used for tissue oximetry, where the detection of weak diffuse light signals is important. Monte Carlo simulations...... performed on a model of a neonatal head shows that approximately 60% of the injected light will be diffuse reflected. However, the change in diffuse reflected light due to the change in cerebral oxygenation is very low and the light will be completely isotropic scattered. The reflectance of the black...... in quantum efficiency for both normal incident light and light incident at 38°....

Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

Science.gov (United States)

Ahmed, Moinuddin; Butler, Donald P.

2015-07-01

Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

Oxygen vacancies induced enhancement of photoconductivity of La0.5Sr0.5CoO3 - δ thin film

Science.gov (United States)

Gao, R. L.; Fu, C. L.; Cai, W.; Chen, G.; Deng, X. L.; Yang, H. W.; Sun, J. R.; Zhao, Y. G.; Shen, B. G.

2014-09-01

Effects of light and electrical current on the electrical transport properties and photovoltaic properties of oxygen-stoichiometric La0.5Sr0.5CoO3 and oxygen-deficient La0.5Sr0.5CoO3 - δ films prepared by pulsed laser deposition have been investigated. Oxygen-deficient films annealed in a vacuum show an obvious increase of resistance and lattice parameter. Besides, a direct correlation between the magnitude of the photoconductivity and oxygen vacancies in La0.5Sr0.5CoO3 - δ films has been observed. The light illumination causes a resistance drop to show the photoconductivity effect. Moreover, the photoconductivity can be remarkably enhanced by increasing the electrical current, that is, it exhibits current-enhanced photoconductivity (CEPC) effect. Oxygen deficiency in the annealed film leads to the formation of a structural disorder in the Co-O-Co conduction channel due to the accumulated oxygen vacancies and hence is believed to be responsible for the increase in higher photoconductivity. These results may be important for practical applications in photoelectric devices.

Conceptual thermal design and analysis of a far-infrared/mid-infrared remote sensing instrument

Science.gov (United States)

Roettker, William A.

1992-07-01

This paper presents the conceptual thermal design and analysis results for the Spectroscopy of the Atmosphere using Far-Infrared Emission (SAFIRE) instrument. SAFIRE has been proposed for Mission to Planet Earth to study ozone chemistry in the middle atmosphere using remote sensing of the atmosphere in the far-infrared (21-87 microns) and mid-infrared (9-16 microns) spectra. SAFIRE requires that far-IR detectors be cooled to 3-4 K and mid-IR detectors to 80 K for the expected mission lifetime of five years. A superfluid helium dewar and Stirling-cycle cryocoolers provide the cryogenic temperatures required by the infrared detectors. The proposed instrument thermal design uses passive thermal control techniques to reject 465 watts of waste heat from the instrument.

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

Science.gov (United States)

Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

2018-05-01

In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

Engineering the temporal response of photoconductive photodetectors via selective introduction of surface trap states.

Science.gov (United States)

Konstantatos, Gerasimos; Levina, Larissa; Fischer, Armin; Sargent, Edward H

2008-05-01

Photoconductive photodetectors fabricated using simple solution-processing have recently been shown to exhibit high gains (>1000) and outstanding sensitivities ( D* > 10(13) Jones). One ostensible disadvantage of exploiting photoconductive gain is that the temporal response is limited by the release of carriers from trap states. Here we show that it is possible to introduce specific chemical species onto the surfaces of colloidal quantum dots to produce only a single, desired trap state having a carefully selected lifetime. In this way we demonstrate a device that exhibits an attractive photoconductive gain (>10) combined with a response time ( approximately 25 ms) useful in imaging. We achieve this by preserving a single surface species, lead sulfite, while eliminating lead sulfate and lead carboxylate. In doing so we preserve the outstanding sensitivity of these devices, achieving a specific detectivity of 10(12) Jones in the visible, while generating a temporal response suited to imaging applications.

Method for generation of tunable far infrared radiation from two-dimensional plasmons

Science.gov (United States)

Katz, Joseph (Inventor)

1989-01-01

Tunable far infrared radiation is produced from two-dimensional plasmons in a heterostructure, which provides large inversion-layer electron densities at the heterointerface, without the need for a metallic grating to couple out the radiation. Instead, a light interference pattern is produced on the planar surface of the heterostructure using two coherent laser beams of a wavelength selected to be strongly absorbed by the heterostructure in order to penetrate through the inversion layer. The wavelength of the far infrared radiation coupled out can then be readily tuned by varying the angle between the coherent beams, or varying the wavelength of the two interfering coherent beams, thus varying the periodicity of the photoconductivity grating to vary the wavelength of the far infrared radiation being coupled out.

Vacuum-Ultraviolet Photovoltaic Detector.

Science.gov (United States)

Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

2018-01-23

Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

Photoconducting properties of fullerene derivatized with a biphenil moiety

Czech Academy of Sciences Publication Activity Database

Corvis, Y.; Trzcinska, K.; Rink, R.; Bílková, Petra; Gorecka, E.; Bilewicz, R.; Rogalska, E.

2006-01-01

Roč. 80, č. 3 (2006), s. 1899-1907 ISSN 0137- 5083 Grant - others:Research Training Network(XE) HPRN-CT-2002-00171 Institutional research plan: CEZ:AV0Z10100520 Keywords : fullerene * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.491, year: 2006

Hall effect and photoconductivity lifetime studies of gallium nitride, indium nitride, and mercury cadmium telluride

Science.gov (United States)

Swartz, Craig H.

A deep understanding of both carrier recombination and transport is necessary for semiconductor engineering, particularly in defining the ultimate limits of performance for a given device before spending the resources to perfect its fabrication. Hall effect measurements utilizing a variable magnetic field are necessary to discriminate between conduction in epitaxial layers and conduction originating at the surface or at an interfacial layer. For thick hydride vapor phase epitaxy (HVPE) grown GaN, variable field Hall measurements revealed the presence of small but significant lower mobility surface and interface electrons which would otherwise lead to errors in interpreting the electrical properties. In addition, QMSA analysis of the measurements indicates that thick GaN samples contain a large spread in electron mobility values, most likely with depth. For molecular beam epitaxial InN, it was found that electrical measurements are affected by surface charge conduction, as well as the non-uniformity of mobility and carrier concentration with depth. Both of these effects mask the surprisingly high quality of the material close to the surface. Photoconductance lifetime and variable-magnetic-field Hall and transient measurements were performed on a series of undoped, In-doped and As-doped HgCdTe grown by MBE and MOCVD. N-type layers often significantly influence the interpretation of the electrical measurements. Even the best Low Wavelength Infrared (LWIR) n-type material still appears to be dominated by defect-related recombination, as intrinsic lifetimes calculated with full band structure can be well above those measured. Mid-Wavelength Infrared (MWIR) lifetimes increase somewhat with carrier concentration, as if the n-type doping process were passivating Schockley-Read-Hall (SRH) defects. P-type MWIR films lie mainly below the predicted values, and their relationship between concentration and lifetime is essentially unchanged by growth technique, indicating that a

Optical absorption and photoconductivity in iodine-excess ionic liquids: the case of 1-alkyl-3-methyl imidazolium iodides.

Science.gov (United States)

Aono, Masami; Miyazaki, Hisashi; Takekiyo, Takahiro; Tsuzuki, Seiji; Abe, Hiroshi

2018-02-21

We investigated the optical absorption and photoconductivity of iodine-excess ionic liquids (ILs) based on 1-alkyl-3-methyl imidazolium iodide ([C n mim][I]; n = 3, 4, and 6). The iodide concentration m was 2 ≦ m ≦ 8, which was determined by the molar fraction [C n mim] +  : [I m ] - = 1 : m. By adding iodine, an absorption edge shifted from 282 nm in the UV region to around 600 nm in the visible-light region. The optical bandgaps E o decreased gradually from 2.3 eV to 1.9 eV with increasing m from 2 to 8. The alkyl-side chain lengths of the cations have little effect on the E o . This experimental result was confirmed by ab initio molecular orbital calculations. The effects were reflected in the photoconductivity of the ILs, as expected. [C 4 mim][I m ] exhibited greater photo-induced electron generation compared with [C 3 mim][I m ] and [C 6 mim][I m ]. The photoconductivity in both [C 3 mim][I m ] and [C 6 mim][I m ] increased slightly with increasing m. The trend of photoconductivity in [C 4 mim][I m ] exhibited an N-shaped form. The highest photoconductivity 1.6 was observed in [C 4 mim][I 8 ].

Color-sensitive photoconductivity of nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition

International Nuclear Information System (INIS)

Oekermann, T.; Yoshida, T.; Tada, H.; Minoura, H.

2006-01-01

Nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition have been investigated in conductivity and photoconductivity measurements in view of applications in dye-sensitized solar cells (DSSC) and in optoelectronics. Highly porous ZnO/eosin Y films, which were obtained at potentials < - 0.9 V vs. SCE, were found to have a very high conductivity already in the dark, probably because of a higher n-doping, which is due to a higher concentration of Zn atoms in the film. On the other hand, less porous or non-porous films, which were obtained at more positive potentials and in which the dye molecules are located within the ZnO crystals, were found to show a much higher sensitivity to illumination with visible light in photoconductivity measurements due to a higher absolute photoconductivity and a lower conductivity in the dark

Color-sensitive photoconductivity of nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Oekermann, T. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan) and University of Hannover, Institute of Physical Chemistry and Electrochemistry, Callinstrasse 3-3A, 30167 Hannover (Germany)]. E-mail: torsten.oekermann@pci.uni-hannover.de; Yoshida, T. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan)]. E-mail: yoshida@apchem.gifu-u.ac.jp; Tada, H. [Institute for Molecular Science, Okazaki National Research Institutes, Myodaiji, Okazaki 444-8585 (Japan); Minoura, H. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan)

2006-07-26

Nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition have been investigated in conductivity and photoconductivity measurements in view of applications in dye-sensitized solar cells (DSSC) and in optoelectronics. Highly porous ZnO/eosin Y films, which were obtained at potentials < - 0.9 V vs. SCE, were found to have a very high conductivity already in the dark, probably because of a higher n-doping, which is due to a higher concentration of Zn atoms in the film. On the other hand, less porous or non-porous films, which were obtained at more positive potentials and in which the dye molecules are located within the ZnO crystals, were found to show a much higher sensitivity to illumination with visible light in photoconductivity measurements due to a higher absolute photoconductivity and a lower conductivity in the dark.

Infrared thermography

CERN Document Server

Meola, Carosena

2012-01-01

This e-book conveys information about basic IRT theory, infrared detectors, signal digitalization and applications of infrared thermography in many fields such as medicine, foodstuff conservation, fluid-dynamics, architecture, anthropology, condition monitoring, non destructive testing and evaluation of materials and structures.

Optically controlled electrophoresis with a photoconductive substrate

Science.gov (United States)

Inami, Wataru; Nagashima, Taiki; Kawata, Yoshimasa

2018-05-01

A photoconductive substrate is used to perform electrophoresis. Light-induced micro-particle flow manipulation is demonstrated without using a fabricated flow channel. The path along which the particles were moved was formed by an illuminated light pattern on the substrate. Because the substrate conductivity and electric field distribution can be modified by light illumination, the forces acting on the particles can be controlled. This technique has potential applications as a high functionality analytical device.

Photoconductivity response time in amorphous semiconductors

Science.gov (United States)

Adriaenssens, G. J.; Baranovskii, S. D.; Fuhs, W.; Jansen, J.; Öktü, Ö.

1995-04-01

The photoconductivity response time of amorphous semiconductors is examined theoretically on the basis of standard definitions for free- and trapped-carrier lifetimes, and experimentally for a series of a-Si1-xCx:H alloys with xgeneration rate and temperature. As no satisfactory agreement between models and experiments emerges, a simple theory is developed that can account for the experimental observations on the basis of the usual multiple-trappping ideas, provided a small probability of direct free-carrier recombination is included. The theory leads to a stretched-exponential photocurrent decay.

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Effect of Zn doping on optical properties and photoconductivity of ...

Indian Academy of Sciences (India)

Keywords. Thin film; spray pyrolysis; tin sulfide; optical properties; photoluminescence; photoconductivity. 1. ... ber of compounds with CdI2 structure, has interesting proper- ties such .... STM images of 0, 2·5, 5 and 7·5 at% Zn-doped SnS2 films.

Influence of skin blood flow and source-detector distance on near-infrared spectroscopy-determined cerebral oxygenation in humans

DEFF Research Database (Denmark)

Hirasawa, Ai; Yanagisawa, Shintaro; Tanaka, Naoki

2015-01-01

Most near-infrared spectroscopy (NIRS) apparatus fails to isolate cerebral oxygenation from an extracranial contribution although they use different source-detector distances. Nevertheless, the effect of different source-detector distances and change in extracranial blood flow on the NIRS signal...... in a semi-recumbent position, while extracranial blood flow was restricted by application of four different pressures (+20 to +80 mmHg) to the left temporal artery. The O2 Hb was measured at the forehead via a multidistance probe (source-detector distance; 15, 22·5 and 30 mm), and SkBF was determined...... by laser Doppler. Heart rate and blood pressure were unaffected by application of pressure to the temporal artery, while SkBF gradually decreased (Papplied pressure...

High-performance UV detector made of ultra-long ZnO bridging nanowires

International Nuclear Information System (INIS)

Li Yanbo; Della Valle, Florent; Simonnet, Mathieu; Yamada, Ichiro; Delaunay, Jean-Jacques

2009-01-01

A nanowatt UV photoconductive detector made up of ultra-long (∼100 μm) ZnO bridging nanowires has been fabricated by a single-step chemical vapor deposition (CVD) process. The electrodes, forming comb-shaped thick ZnO layers, and the sensing elements, consisting of ZnO nanowires bridging the electrodes, were fabricated simultaneously in a single-step CVD process. The device showed drastic changes (10-10 5 times) in current under a wide range of UV irradiances (10 -8 -10 -2 W cm -2 ). Moreover, the detector exhibited fast response (rise and decay times of the order of 1 s) to UV illumination in air, but no response to visible light (hν<3.2 eV). Our approach provides a simple and cost-effective way to fabricate high-performance 'visible-blind' UV detectors.

Coexistence of positive and negative photoconductivity in nickel oxide decorated multiwall carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Jiménez-Marín, E. [Departamento de Ingeniería en Metalurgia y Materiales, Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, Ciudad de México 07300 (Mexico); Villalpando, I. [Centro de Investigación para los Recursos Naturales, Salaices, Chihuahua 33941 (Mexico); Trejo-Valdez, M. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, México, Ciudad de México 07738 (Mexico); Cervantes-Sodi, F. [Departamento de Física y Matemáticas, Universidad Iberoamericana, Prolongación Paseo de la Reforma 880, Lomas de Santa Fe, Ciudad de México 01219 (Mexico); Vargas-García, J.R. [Centro de Nanociencias y Micro y Nanotecnologías del Instituto Politécnico Nacional, Ciudad de México 07738 (Mexico); Torres-Torres, C., E-mail: ctorrest@ipn.mx [Sección de Estudios de Posgrado e Investigación, Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Zacatenco, Instituto Politécnico Nacional, Ciudad de México 07738 (Mexico)

2017-06-15

Highlights: • Nickel oxide decorated carbon nanotubes were prepared by chemical vapor deposition. • Contrast in photoconductivity phenomena in the nanohybrid was analyzed. • Electrical and nonlinear optical properties were evaluated. • A Wheatstone bridge sensor based metal/carbon nanostructures was proposed. - Abstract: Within this work was explored the influence of nickel oxide decoration on the photoconductive effects exhibited by multiwall carbon nanotubes. Samples in thin film form were prepared by a chemical vapor deposition method. Experiments for evaluating the photo-response of the nanomaterials at 532 nanometers wavelength were undertaken. A contrasting behavior in the photoelectrical characteristics of the decorated nanostructures was analyzed. The decoration technique allowed us to control a decrease in photoconduction of the sample from approximately 100 μmhos/cm to −600 μmhos/cm. Two-wave mixing experiments confirmed an enhancement in nanosecond nonlinearities derived by nickel oxide contributions. It was considered that metallic nanoparticles present a strong responsibility for the evolution of the optoelectronic phenomena in metal/carbon nanohybrids. Impedance spectroscopy explorations indicated that a capacitive behavior correspond to the samples. A potential development of high-sensitive Wheatstone bridge sensors based on the optoelectrical performance of the studied samples was proposed.

Cold field emission dominated photoconductivity in ordered three-dimensional assemblies of octapod-shaped CdSe/CdS nanocrystals

KAUST Repository

Zhang, Yang

2013-01-01

Semiconductor nanocrystals, especially their ordered assemblies, are promising materials for various applications. In this paper, we investigate the photoconductive behavior of sub-micron size, ordered three-dimensional (3D) assemblies of octapod-shaped CdSe/CdS nanocrystals that are contacted by overlay electron-beam lithography. The regular structure of the assemblies leads to photocurrent-voltage curves that can be described by the cold field electron emission model. Mapping of the photoconductivity versus excitation wavelength and bias voltage allows the extraction of the band gap and identification of the photoactive region in the voltage and spectral domain. These results have important implications for the understanding of photoconductive transport in similar systems. © 2013 The Royal Society of Chemistry.

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

Energy Technology Data Exchange (ETDEWEB)

Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

Material parameters in a thick hydrogenated amorphous silicon detector and their effect on signal collection

International Nuclear Information System (INIS)

Qureshi, S.; Perez-Mendez, V.; Kaplan, S.N.; Fujieda, I.; Cho, G.; Street, R.A.

1989-04-01

Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (/approximately/30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential. 8 refs., 4 figs., 1 tab

Photoconductivity and photomagnetic electromotive force in InSb thin samples

International Nuclear Information System (INIS)

Mosanov, O.; Chonanova, O.G.; Annamamedov, A.G.; Padalko, A.G.; Redzhepov, M.

1987-01-01

Photoconductivity and photomagnetic effect in crossed electric and magnetic fields in thin (4 and 20 μm) InSb monocrystalline layers obtained from the melt by oriented crystallization are investigated. Possibility of controlling photomagnetic emf value by variation of the current value and polarity is shown

Hybrid Computational Simulation and Study of Terahertz Pulsed Photoconductive Antennas

Science.gov (United States)

Emadi, R.; Barani, N.; Safian, R.; Nezhad, A. Zeidaabadi

2016-11-01

A photoconductive antenna (PCA) has been numerically investigated in the terahertz (THz) frequency band based on a hybrid simulation method. This hybrid method utilizes an optoelectronic solver, Silvaco TCAD, and a full-wave electromagnetic solver, CST. The optoelectronic solver is used to find the accurate THz photocurrent by considering realistic material parameters. Performance of photoconductive antennas and temporal behavior of the excited photocurrent for various active region geometries such as bare-gap electrode, interdigitated electrodes, and tip-to-tip rectangular electrodes are investigated. Moreover, investigations have been done on the center of the laser illumination on the substrate, substrate carrier lifetime, and diffusion photocurrent associated with the carriers temperature, to achieve efficient and accurate photocurrent. Finally, using the full-wave electromagnetic solver and the calculated photocurrent obtained from the optoelectronic solver, electromagnetic radiation of the antenna and its associated detected THz signal are calculated and compared with a measurement reference for verification.

Growth and characterization of In1-xGaxAs/InAs0.65Sb0.35 strained layer superlattice infrared detectors

Science.gov (United States)

Ariyawansa, G.; Duran, J. M.; Reyner, C. J.; Steenbergen, E. H.; Yoon, N.; Wasserman, D.; Scheihing, J. E.

2017-02-01

Type-II strained layer superlattices (SLS) are an active research topic in the infrared detector community and applications for SLS detectors continue to grow. SLS detector technology has already reached the commercial market due to improvements in material quality, device design, and device fabrication. Despite this progress, the optimal superlattice design has not been established, and at various times has been believed to be InAs/GaSb, InAs/InGaSb, or InAs/InAsSb. Building on these, we investigate the properties of a new mid-wave infrared SLS material: InGaAs/InAsSb SLS. The ternary InGaAs/InAsSb SLS has three main advantages over other SLS designs: greater support for strain compensation, enhanced absorption due to increased electron-hole wavefunction overlap, and improved vertical hole mobility due to reduced hole effective mass. Here, we compare three ternary SLSs, with approximately the same bandgap (0.240 eV at 150 K), comprised of Ga fractions of 5%, 10%, and 20% to a reference sample with 0% Ga. Enhanced absorption is both theoretically predicted and experimentally realized. Furthermore, the characteristics of ternary SLS infrared detectors based on an nBn architecture are reported and exhibit nearly state-of-the-art dark current performance with minimal growth optimization. We report standard material and device characterization information, including dark current and external quantum efficiency, and provide further analysis that indicates improved quantum efficiency and vertical hole mobility. Finally, a 320×256 focal plane array built based on the In0.8Ga0.2As/InAs0.65Sb0.35 SLS design is demonstrated with promising performance.

InAs/GaSb type-II superlattice infrared detectors: Future prospect

Science.gov (United States)

Rogalski, A.; Martyniuk, P.; Kopytko, M.

2017-09-01

Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability

Two-step photoconductivity in LiY x Lu1 - x F4:Ce,Yb crystals

Science.gov (United States)

Nurtdinova, L. A.; Korableva, S. L.; Leontiev, A. V.

2016-10-01

Photoconductivity of LiY x Lu1- x F4:Ce,Yb ( x = 0-1) crystals is measured under one- and two-step excitation. It is established that the photoconductivity is due to intra-center transitions from excited states of Ce3+ ions. The position of the ground 4 f-state of Ce3+ ion relative to the bottom of the conduction band is determined. The choice of pumping conditions to obtain the lasing on the 5 d-4 f transitions of trivalent cerium in these active media is substantiated.

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Energy Technology Data Exchange (ETDEWEB)

Tan, K. H.; Yoon, S. F.; Wicaksono, S.; Loke, W. K.; Li, D. S. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Saadsaoud, N.; Tripon-Canseliet, C. [Laboratoire d' Electronique et Electromagnétisme, Pierre and Marie Curie University, 4 Place Jussieu, 75005 Paris (France); Lampin, J. F.; Decoster, D. [Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, Universite des Sciences et Technologies de Lille, BP 60069, 59652 Villeneuve d' Ascq Cedex (France); Chazelas, J. [Thales Airborne Systems, 2 Avenue Gay Lussac, 78852 Elancourt (France)

2013-09-09

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10{sup 7} Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.

History of HgTe-based photodetectors in Poland

Science.gov (United States)

Rogalski, A.

2010-09-01

In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

Theoretical investigation of a photoconductively switched high-voltage spark gap

NARCIS (Netherlands)

Broks, B.H.P.; Hendriks, J.; Brok, W.J.M.; Brussaard, G.J.H.; Mullen, van der J.J.A.M.

2006-01-01

In this contribution, a photoconductively switched high-voltage spark gap with an emphasis on theswitching behavior is modeled. It is known experimentally that not all of the voltage that is present at the input of the spark gap is switched, but rather a fraction of it drops across the spark gap.

Photoconductivity and photodielectric properties of diethyl 2,5-dianilinoterephthalate films

Czech Academy of Sciences Publication Activity Database

Nešpůrek, Stanislav; Mačkus, P. K.

2002-01-01

Roč. 76, 2-3 (2002), s. 443-456 ISSN 0137- 5083 R&D Projects: GA AV ČR IAA1050901 Institutional research plan: CEZ:AV0Z4050913 Keywords : photoconductivity * photodielectric effect * charge carrier trapping Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.528, year: 2002

The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

International Nuclear Information System (INIS)

Moldavskaya, L. D.; Vostokov, N. V.; Gaponova, D. M.; Danil'tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Shashkin, V. I.

2008-01-01

A new possibility for growing InAs/GaAs quantum dot heterostructures for infrared photoelectric detectors by metal-organic vapor-phase epitaxy is discussed. The specific features of the technological process are the prolonged time of growth of quantum dots and the alternation of the low-and high-temperature modes of overgrowing the quantum dots with GaAs barrier layers. During overgrowth, large-sized quantum dots are partially dissolved, and the secondary InGaAs quantum well is formed of the material of the dissolved large islands. In this case, a sandwich structure is formed. In this structure, quantum dots are arranged between two thin layers with an increased content of indium, namely, between the wetting InAs layer and the secondary InGaAs layer. The height of the quantum dots depends on the thickness of the GaAs layer grown at a comparatively low temperature. The structures exhibit intraband photoconductivity at a wavelength around 4.5 μm at temperatures up to 200 K. At 90 K, the photosensitivity is 0.5 A/W, and the detectivity is 3 x 10 9 cm Hz 1/2 W -1

Study of polymorphous silicon as thermo-sensing film for infrared detectors

International Nuclear Information System (INIS)

Moreno, M.; Torres, A.; Ambrosio, R.; Torres, E.; Rosales, P.; Zuñiga, C.; Reyes-Betanzo, C.; Calleja, W.; De la Hidalga, J.; Monfil, K.

2012-01-01

In this work we have deposited and characterized pm-Si:H thin films obtained by plasma deposition. Our aim is to use pm-Si:H as thermo-sensing element for infrared (IR) detectors based on un-cooled microbolometers. We have studied the electrical characteristics of pm-Si:H that are figures of merit important for IR detection, as activation energy, thermal coefficient of resistance (TCR), room temperature conductivity (σ RT ) and responsivity under IR radiation. The influence of the substrate temperature (200 °C and 300 °C) on the pm-Si:H characteristics has been also studied. Our results shown that pm-Si:H is an excellent candidate to be used as thermo-sensing film for microbolometers, due to its large activation energy and TCR, with an improved σ RT .

Temperature dependences of photoconductivity of CdHgTe crystals with photoactive inclusions

International Nuclear Information System (INIS)

Vlasenko, A.I.; Vlasenko, Z.K.

1999-01-01

Temperature dependences of life time τ and spectral characteristics of photoconductivity for Cd x Hg 1-x Te crystals (x = 0.2) with photoactive inclusions are investigated. It is shown that the N-type character of effective lifetime temperature dependences in nonhomogeneous crystals, in particular, its sharp temperature activation in the region of transition from the impurity to the intrinsic conductivity is determined by not the Shockley-Read mechanism, but by the interband impact mechanism with changing effective geometrical sizes of recombination active regions under temperature increase. Within the frames of this model the smoothing of the non-monotone character of the photoconductivity spectral characteristics in the region of fundamental absorption under the heating is explained. The calculation results that are in qualitative agreement with the experimental data are presented [ru

Infrared Quenched Photoinduced Superconductivity

Science.gov (United States)

Federici, J. F.; Chew, D.; Guttierez-Solana, J.; Molina, G.; Savin, W.; Wilber, W.

1996-03-01

Persistant photoconductivity (PPC) and photoinduced superconductivity (PISC) in oxygen deficient YBa_2Cu_3O_6+x have received recent attention. It has been suggested that oxygen vacancy defects play an important role in the PISC/PPC mechanism.(J. F. Federici, D. Chew, B. Welker, W. Savin, J. Gutierrez-Solana, and T. Fink, Phys. Rev. B), December 1995 Supported by National Science Foundation In this model, defects trap photogenerated electrons so that electron-hole recombination can not occur thereby allowing photogenerated holes to contribute to the carrier density. Nominally, the photoinduced state is long-lived, persisting for days at low temperature. Experiment results will be presented demonstrating that the photoinduced superconductivity state can be quenched using infrared radiation. Implications for the validity of the PISC/PCC defect model will be discussed.

Study of the impurity photoconductivity in p-InSb using epitaxial p{sup +} contacts

Energy Technology Data Exchange (ETDEWEB)

Eminov, Sh. O., E-mail: shikhamirem@gmail.com [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2016-08-15

The optical absorption coefficient α in p{sup +}-InSb layers (with hole concentrations of p ≈ 1 × 10{sup 17}–1.2 × 10{sup 19} cm{sup –3}), grown by liquid-phase epitaxy on p-InSb substrates, is measured in the spectral range of 5-12 µm at 90 K, and the impurity photoconductivity is measured (at 60 and 90 K) in p{sup +}–p structures. It is found that a in the p{sup +} layers reaches a value of 7000 cm{sup –1} (at p ≈ 2 × 10{sup 19} cm{sup –1}). It is shown that the measured substrate value of (α ≈1–3 cm{sup –1}) is overestimated in comparison with estimates (α ≈ 0.1 cm{sup –1}) based on comparing the photoconductivity data. This discrepancy is explained by the fact that the optical transitions of holes responsible for photoconductivity are obscured by the excitation of electrons to the conduction band. The photoionization cross section for these transitions does not exceed 1 × 10{sup –15} cm{sup 2}.

The physics of photoconductive spark gap switching : pushing the frontiers

NARCIS (Netherlands)

Hendriks, J.

2006-01-01

Photoconductive switching of an atmospheric, air-¯lled spark gap by a high-power fem- tosecond laser is a novel approach for switching high voltages into pulses with a very fast rise time (order ps) and almost no shot-to-shot time variation (jitter). Such a switch makes it possible to synchronize

Detector Control and Data Acquisition for the Wide-Field Infrared Survey Telescope (WFIRST) with a Custom ASIC

Science.gov (United States)

Smith, Brian S.; Loose, Markus; Alkire, Greg; Joshi, Atul; Kelly, Daniel; Siskind, Eric; Rossetti, Dino; Mah, Jonathan; Cheng, Edward; Miko, Laddawan;

Fast photoconductor CdTe detectors for synchrotron x-ray studies

International Nuclear Information System (INIS)

Yoo, Sung Shik; Faurie, J.P.; Huang Qiang; Rodricks, B.

1993-09-01

The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bunch width of 119 ps. To perform experiments with x-rays generated by positrons on these time scales one needs extremely high speed detectors. To achieve the necessary high speed, we are developing MBE-grown CdTe-base photoconductive position sensitive array detectors. The arrays fabricated have 64 pixels with a gap of 100 μm between pixels. The high speed response of the devices was tested using a short pulse laser. X-ray static measurements were performed using an x-ray tube and synchrotron radiation to study the device's response to flux and wavelength changes. This paper presents the response of the devices to some of these tests and discusses different physics aspects to be considered when designing high speed detectors

Effect of Zn doping on optical properties and photoconductivity of ...

Indian Academy of Sciences (India)

Optical bandgap of the films have been calculated for different dopant concentrations and they lie in the region of 2.3–2.7 eV. Surprisingly, regardless of doping level, the luminescent properties of films are related to the fundamental bandgap energy and deep levels inside the bandgap. Photoconductivity of the films have ...

A novel, highly efficient cavity backshort design for far-infrared TES detectors

Science.gov (United States)

Bracken, C.; de Lange, G.; Audley, M. D.; Trappe, N.; Murphy, J. A.; Gradziel, M.; Vreeling, W.-J.; Watson, D.

2018-03-01

In this paper we present a new cavity backshort design for TES (transition edge sensor) detectors which will provide increased coupling of the incoming astronomical signal to the detectors. The increased coupling results from the improved geometry of the cavities, where the geometry is a consequence of the proposed chemical etching manufacturing technique. Using a number of modelling techniques, predicted results of the performance of the cavities for frequencies of 4.3-10 THz are presented and compared to more standard cavity designs. Excellent optical efficiency is demonstrated, with improved response flatness across the band. In order to verify the simulated results, a scaled model cavity was built for testing at the lower W-band frequencies (75-100 GHz) with a VNA system. Further testing of the scale model at THz frequencies was carried out using a globar and bolometer via an FTS measurement set-up. The experimental results are presented, and compared to the simulations. Although there is relatively poor comparison between simulation and measurement at some frequencies, the discrepancies are explained by means of higher-mode excitation in the measured cavity which are not accounted for in the single-mode simulations. To verify this assumption, a better behaved cylindrical cavity is simulated and measured, where excellent agreement is demonstrated in those results. It can be concluded that both the simulations and the supporting measurements give confidence that this novel cavity design will indeed provide much-improved optical coupling for TES detectors in the far-infrared/THz band.

Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

International Nuclear Information System (INIS)

Ma Xiangrong; Shi Wei; Ji Weili; Xue Hong

2011-01-01

A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch. (semiconductor devices)

Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

Science.gov (United States)

Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

2011-12-01

A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

2016-04-25

The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

Advances in detector technologies for visible and infrared wavefront sensing

Science.gov (United States)

Feautrier, Philippe; Gach, Jean-Luc; Downing, Mark; Jorden, Paul; Kolb, Johann; Rothman, Johan; Fusco, Thierry; Balard, Philippe; Stadler, Eric; Guillaume, Christian; Boutolleau, David; Destefanis, Gérard; Lhermet, Nicolas; Pacaud, Olivier; Vuillermet, Michel; Kerlain, Alexandre; Hubin, Norbert; Reyes, Javier; Kasper, Markus; Ivert, Olaf; Suske, Wolfgang; Walker, Andrew; Skegg, Michael; Derelle, Sophie; Deschamps, Joel; Robert, Clélia; Vedrenne, Nicolas; Chazalet, Frédéric; Tanchon, Julien; Trollier, Thierry; Ravex, Alain; Zins, Gérard; Kern, Pierre; Moulin, Thibaut; Preis, Olivier

2012-07-01

detector with a readout noise of 3 e (goal 1e) at 700 Hz frame rate. The LGSD is a scaling of the NGSD with 1760x1680 pixels and 3 e readout noise (goal 1e) at 700 Hz (goal 1000 Hz) frame rate. New technologies will be developed for that purpose: advanced CMOS pixel architecture, CMOS back thinned and back illuminated device for very high QE, full digital outputs with signal digital conversion on chip. In addition, the CMOS technology is extremely robust in a telescope environment. Both detectors will be used on the European ELT but also interest potentially all giant telescopes under development. Additional developments also started for wavefront sensing in the infrared based on a new technological breakthrough using ultra low noise Avalanche Photodiode (APD) arrays within the RAPID project. Developed by the SOFRADIR and CEA/LETI manufacturers, the latter will offer a 320x240 8 outputs 30 microns IR array, sensitive from 0.4 to 3.2 microns, with 2 e readout noise at 1500 Hz frame rate. The high QE response is almost flat over this wavelength range. Advanced packaging with miniature cryostat using liquid nitrogen free pulse tube cryocoolers is currently developed for this programme in order to allow use on this detector in any type of environment. First results of this project are detailed here. These programs are held with several partners, among them are the French astronomical laboratories (LAM, OHP, IPAG), the detector manufacturers (e2v technologies, Sofradir, CEA/LETI) and other partners (ESO, ONERA, IAC, GTC). Funding is: Opticon FP6 and FP7 from European Commission, ESO, CNRS and Université de Provence, Sofradir, ONERA, CEA/LETI and the French FUI (DGCIS).

Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Energy Technology Data Exchange (ETDEWEB)

Craig, A. P.; Percy, B.; Marshall, A. R. J. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Jain, M. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Wicks, G.; Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Golding, T. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); McEwan, K.; Howle, C. [Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)

2015-05-18

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

Josephson effect far-infrared detector

International Nuclear Information System (INIS)

Shapiro, S.

1971-01-01

Four Josephson effect schemes for detection of far-infrared radiation are reviewed: Video broad-band detection, regenerative detection, conventional mixing for monochromatic signals, and self-mixing or frequency conversion. (U.S.)

Infrared LED Array For Silicon Strip Detector Qualification

CERN Document Server

Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

2003-01-01

The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

Detecting an infrared photon within an hour. Transition-edge detector at ALPS-II

Energy Technology Data Exchange (ETDEWEB)

Dreyling-Eschweiler, Jan [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Hamburg Univ. (Germany). Inst. fuer Experimentalphysik; Horns, Dieter [Hamburg Univ. (Germany). Inst. fuer Experimentalphysik; Collaboration: ALPS-II collaboration

2013-09-15

An essential design requirement of the ALPS-II experiment is the efficient detection of single photons with a very low instrumental background of 10 {mu}Hz. In 2011 the ALPS collaboration started to set up a TES detector (Transition-Edge Sensor) for ALPS-II, the second phase of the experiment. Since mid of 2013 the setup is ready for characterization in the ALPS laboratory: an ADR cryostat (Adiabatic Demagnetization Refrigerator) as millikelvin environment, a low noise SQUID (Superconducting Quantum Interference Device) with electronics for read-out and a fiber-coupled high-efficient TES for near-infrared photons as sensor. First measurements have shown a good discrimination between noise and 1064 nm signals.

Detecting an infrared photon within an hour. Transition-edge detector at ALPS-II

International Nuclear Information System (INIS)

Dreyling-Eschweiler, Jan; Hamburg Univ.; Horns, Dieter

2013-09-01

An essential design requirement of the ALPS-II experiment is the efficient detection of single photons with a very low instrumental background of 10 μHz. In 2011 the ALPS collaboration started to set up a TES detector (Transition-Edge Sensor) for ALPS-II, the second phase of the experiment. Since mid of 2013 the setup is ready for characterization in the ALPS laboratory: an ADR cryostat (Adiabatic Demagnetization Refrigerator) as millikelvin environment, a low noise SQUID (Superconducting Quantum Interference Device) with electronics for read-out and a fiber-coupled high-efficient TES for near-infrared photons as sensor. First measurements have shown a good discrimination between noise and 1064 nm signals.

Overview of DRS uncooled VOx infrared detector development

Science.gov (United States)

Li, Chuan; Han, C. J.; Skidmore, George

2011-06-01

Significant progress has been made over the past decade on uncooled focal plane array technologies and production capabilities. The detector pixel dimensions have continually decreased with an increase in pixel performance making large format, high-density array products affordable. In turn, this has resulted in the proliferation of uncooled IR detectors in commercial and military markets. Presently, uncooled detectors are widely used in firefighting, surveillance, industrial process monitoring, machine vision, and medical applications. Within the military arena, uncooled detectors are ubiquitous in Army soldier systems such as weapon sights, driver's viewers, and helmet-mounted sights. Uncooled detectors are also employed in airborne and ground surveillance sensors including unmanned aerial vehicles and robot vehicles.

Observation of galactic far-infrared ray

International Nuclear Information System (INIS)

Maihara, Toshinori; Oda, Naoki; Okuda, Haruyuki; Sugiyama, Takuya; Sakai, Kiyomi.

1978-01-01

Galactic far-infrared was observed to study the spatial distribution of interstellar dust. Far-infrared is emitted by interstellar dust distributing throughout the galactic plane. The observation of far-infrared is very important to study the overall structure of the galaxy, that is the structure of the galactic arm and gas distribution. The balloon experiment was conducted on May 25, 1978. The detector was a germanium bolometer cooled by liquid helium. The size of the detector is 1.6 mm in diameter. The geometrical factor was 4 x 10 3 cm 2 sr. The result showed that the longitude distribution of far-infrared at 150 μm correlated with H 166 α recombination line. This indicates that the observed far-infrared is emitted by interstellar dust heated by photons of Lyman continuum. (Yoshimori, M.)

Response of CVD diamond detectors to alpha radiation

Energy Technology Data Exchange (ETDEWEB)

Souw, E.-K. [Brookhaven National Lab., Upton, NY (United States); Meilunas, R.J. [Northrop-Grumman Corporation, Bethpage, NY 11714-3582 (United States)

1997-11-21

This article describes some results from an experiment with CVD diamond films used as {alpha} particle detectors. It demonstrates that bulk polarization can be effectively stopped within a reasonable time interval. This will enable detector calibration and quantitative measurement. A possible mechanism for the observed polarization quenching is discussed. It involves two types of carrier traps and a tentative band-gap model derived from the results of photoconductive current measurements. The experiment was set up mainly to investigate {alpha} detection properties of polycrystalline diamond films grown by the technique of microwave plasma enhanced chemical vapor deposition. For comparison, two commercially purchased diamond wafers were also investigated, i.e., one grown by the DC arc jet method, and the other, a type-IIa natural diamond wafer (not preselected). The best response to {alpha} particles was obtained using diamond thin-films grown by the microwave PECVD method, followed by the type-IIa natural diamond, and finally, the CVD diamond grown by the DC arc jet technique. (orig.). 43 refs.

Systems engineering and analysis of electro-optical and infrared systems

CERN Document Server

Arrasmith, William Wolfgang

2015-01-01

Introduction to Electro-optic and Infrared (EO/IR) Systems Engineering?Radiation in the Visible and Infrared Parts of the Electromagnetic SpectrumRadiation SourcesThe Effect of the Atmosphere on Optical PropagationBasic OpticsOptical ModulationThe Detection of Optical RadiationNoise in the Optical Detection ProcessTechnical Performance Measures and Metrics of Optical DetectorsModern Detectors and their Measures of PerformanceThe Effects of Cooling on Optical Detector NoiseSignal and Image ProcessingElectro-Optic and Infrared Systems AnalysisLaser Imaging Systems?Spectral Imaging?LIDAR and LADA

La détection infrarouge avec les plans focaux non refroidis : état de l'artUncooled focal plane infrared detectors: the state of the art

Science.gov (United States)

Tissot, Jean-Luc

2003-12-01

The emergence of uncooled detectors has opened new opportunities for IR detection for both military and commercial applications. Development of such devices involves a lot of trade-offs between the different parameters that define the technological stack. These trade-offs explain the number of different architectures that are under worldwide development. The key factor is to find a high sensitivity and low noise thermometer material compatible with silicon technology in order to achieve high thermal isolation in the smallest area as possible. Ferroelectric thermometer based hybrid technology and electrical resistive thermometer based (microbolometer) technology are under development. LETI and ULIS have chosen from the very beginning to develop first a monolithic microbolometer technology fully compatible with commercially available CMOS technology and secondly amorphous silicon based thermometer. This silicon approach has the greatest potential for reducing infrared detector manufacturing cost. After the development of the technology, the transfer to industrial facilities has been performed in a short period of time and the production is now ramping up with ULIS team in new facilities. LETI and ULIS are now working to facilitate the IRFPA integration into equipment in order to address a very large market. Achievement of this goal needs the development of smart sensors with on-chip advanced functions and the decrease of manufacturing cost of IRFPA by decreasing the pixel pitch and simplifying the vacuum package. We present in this paper the technology developed by CEA/LETI and its improvement for being able to designs 384×288 and 160×120 arrays with a pitch of 35 μm. Thermographic application needs high stability infrared detector with a precise determination of the amount of absorbed infrared flux. Hence, infrared detector with internal temperature stabilized shield has been developed and characterized. These results will be presented. To cite this article: J

THz generation from a nanocrystalline silicon-based photoconductive device

International Nuclear Information System (INIS)

Daghestani, N S; Persheyev, S; Cataluna, M A; Rose, M J; Ross, G

2011-01-01

Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material

Recent advances in infrared astronomy

International Nuclear Information System (INIS)

Robson, E.I.

1980-01-01

A background survey is given of developments in infrared astronomy during the last decade. Advantages obtained in using infrared wavelengths to penetrate the Earth's atmosphere and the detectors used for this work are considered. Infrared studies of, among other subjects, the stars, dust clouds, the centre of our galaxy and the 3k cosmic background radiation, are discussed. (UK)

Schottky x-ray detectors based on a bulk β-Ga2O3 substrate

Science.gov (United States)

Lu, Xing; Zhou, Leidang; Chen, Liang; Ouyang, Xiaoping; Liu, Bo; Xu, Jun; Tang, Huili

2018-03-01

β-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga2O3 SBDs. Furthermore, transient response of the β-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga2O3 based devices for X-ray detection.

Quantum dot infrared photodetectors based on indium phosphide

International Nuclear Information System (INIS)

Gebhard, T.

2011-01-01

study the possibility to tailor the spectral properties of the detectors and the influence on the temperature- and detection performance in terms of detectivity and background limited performance. Besides the technical aspects concerning the device-functionality, the physics of excited carrier dynamics was analyzed. Therefore a thorough study of the photovoltaic and photoconductive photocurrent spectrum was performed as a function of bias voltage, temperature and excitation source. (author) [de

Anomalous photoconductivity of ferrocene

Energy Technology Data Exchange (ETDEWEB)

Chakraborty, A K [Indian Association for the Cultivation of Science, Calcutta (India). Dept. of Spectroscopy; Mallik, B [Indian Association for the Cultivation of Science, Calcutta (India). Dept. of Spectroscopy

1995-08-15

Photoconductivity behaviour of ferrocene, a very useful metallo-organic sandwich compound, has been investigated at different constant temperatures using powdery material in a sandwich type of cell configuration and with the exposure of a polychromatic light source (mercury lamp of 125 W). Measurements with a constant d.c. bias voltage (27 V) across the sample cell and a fixed intensity of the exciting light source have shown a drastic change in the photocurrent versus time profile with the increase in temperature. Anomalous changes have been observed in the plot of the photocurrent versus reciprocal of temperature. Such changes are completely absent in the corresponding dark current behaviour. The photoinduced changes have been observed to be almost reversible in the entire temperature range. In a particular temperature range the reversibility of photocurrent is accompanied by fluctuations in equilibrium current obtained after switching off the light source. The observed anomalous changes in photocurrent have been explained by photoinduced phase transition in ferrocene. The possible origin and implications of this photoinduced phase transition are discussed. (orig.)

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-01-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Detector Mount Design for IGRINS

Directory of Open Access Journals (Sweden)

Jae Sok Oh

2014-06-01

Full Text Available The Immersion Grating Infrared Spectrometer (IGRINS is a near-infrared wide-band high-resolution spectrograph jointly developed by the Korea Astronomy and Space Science Institute and the University of Texas at Austin. IGRINS employs three HAWAII-2RG Focal Plane Array (H2RG FPA detectors. We present the design and fabrication of the detector mount for the H2RG detector. The detector mount consists of a detector housing, an ASIC housing, a Field Flattener Lens (FFL mount, and a support base frame. The detector and the ASIC housing should be kept at 65 K and the support base frame at 130 K. Therefore they are thermally isolated by the support made of GFRP material. The detector mount is designed so that it has features of fine adjusting the position of the detector surface in the optical axis and of fine adjusting yaw and pitch angles in order to utilize as an optical system alignment compensator. We optimized the structural stability and thermal characteristics of the mount design using computer-aided 3D modeling and finite element analysis. Based on the structural and thermal analysis, the designed detector mount meets an optical stability tolerance and system thermal requirements. Actual detector mount fabricated based on the design has been installed into the IGRINS cryostat and successfully passed a vacuum test and a cold test.

Hybrid active pixel sensors in infrared astronomy

International Nuclear Information System (INIS)

Finger, Gert; Dorn, Reinhold J.; Meyer, Manfred; Mehrgan, Leander; Stegmeier, Joerg; Moorwood, Alan

2005-01-01

Infrared astronomy is currently benefiting from three main technologies providing high-performance hybrid active pixel sensors. In the near infrared from 1 to 5 μm two technologies, both aiming for buttable 2Kx2K mosaics, are competing, namely InSb and HgCdTe grown by LPE or MBE on Al 2 O 3 , Si or CdZnTe substrates. Blocked impurity band Si:As arrays cover the mid infrared spectral range from 8 to 28 μm. Adaptive optics combined with multiple integral field units feeding high-resolution spectrographs drive the requirements for the array format of infrared sensors used at ground-based infrared observatories. The pixel performance is now approaching fundamental limits. In view of this development, a detection limit for the photon flux of the ideal detector will be derived, depending only on the temperature and the impedance of the detector. It will be shown that this limit is approximated by state of the art infrared arrays for long on-chip integrations. Different detector materials are compared and strategies to populate large focal planes are discussed. The need for the development of small-format low noise sensors for adaptive optics and interferometry will be pointed out

Bulk photovoltaic effect in photoconductive metamaterials based on cone-shaped nanoparticles

DEFF Research Database (Denmark)

Zhukovsky, Sergei; Babicheva, Viktoriia; Uskov, Alexander V.

2014-01-01

is the directanalogy of the photogalvanic effect known to exist in naturally occurring non-centrosymmetric media. This plasmonic bulk photovoltaic effect is intermediate between the inner photoelectric effect in bulk media and the outer photoelectric effect atmacroscopic interfaces. The results obtained are valuable...... for characterizing photoemission and photoconductive properties of plasmonic nanostructures. They can find many uses for photodetection-related and photovoltaic applications...

Enhanced photoconductivity and fine response tuning in nanostructured porous silicon microcavities

Energy Technology Data Exchange (ETDEWEB)

Urteaga, R; MarIn, O; Acquaroli, L N; Schmidt, J A; Koropecki, R R [INTEC-UNL-CONICET, Guemes 3450 - 3000 Santa Fe (Argentina); Comedi, D, E-mail: rkoro@intec.ceride.gov.a [CONICET y LAFISO, Departamento de Fisica, FACET, Universidad Nacional de Tucuman (Argentina)

2009-05-01

We used light confinement in optical microcavities to achieve a strong enhancement and a precise wavelength tunability of the electrical photoconductance of nanostructured porous silicon (PS). The devices consist of a periodic array of alternating PS layers, electrochemically etched to have high and low porosities - and therefore distinct dielectric functions. A central layer having a doubled thickness breaks up the symmetry of the one-dimensional photonic structure, producing a resonance in the photonic band gap that is clearly observed in the reflectance spectrum. The devices were transferred to a glass coated with a transparent SnO{sub 2} electrode, while an Al contact was evaporated on its back side. The electrical conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the angular dependence of this photoconductance peak energy, and propose an explanation of the conductivity behaviour supported by calculations of the internal electromagnetic field. These devices are promising candidates for finely tuned photoresistors with potential application as chemical sensors and biosensors.

CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV

Directory of Open Access Journals (Sweden)

L. B. Atlukhanova

2016-01-01

Full Text Available Two types of non-standard relaxation induced impurity photoconductivity (IIP observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described. In one case, at the stage of post flashing monotonic decay which is typical for relaxation associated with slow traps (the ratio of the speed of the electron capture to the recombination rate (R << 1, the photo response is experiencing vibrations of low frequency (f =0.03-0.3Hz. Relaxation of the second type characterized by rapid photoelectric traps (R >> 1: measurement alternating signal (f > 20 Hz relaxation curves take the form of curves usual impurity photoconductivity. Electronic processes responsible for relaxation of non-standard IIP are analyzed. For example, fast-centers, which include the characteristic AIIBVI donor Agi0, for the first time in semiconductors experimentally, investigated the dependence of the cross section of electron capture by traps energy released during localization.

Preparation of hydrogenated amorphous silicon and its characterization by transient photoconductivity

International Nuclear Information System (INIS)

Walker, C.M.

1992-01-01

Hydrogenated amorphous silicon (a-Si:H) is a semiconductor material that has generated recent widespread interest because of its low manufacturing and processing costs compared with other semiconducting materials. The performance of devices incorporating a-Si:H depends to a large extent on the photoresponse of the a-Si:H. The work in this thesis involves the construction of an a-Si:H plasma-enhanced chemical vapor deposition (PECVD) system, characterization of the quality of the a-Si:H produced by this system, and measurement of the transient photoconductivity n response to pulses of laser illumination with different durations. The relationship of the design of the PECVD system to the quality of the a-Si:H is treated, emphasizing the features included in the system to reduce the incorporation of defects in the a-Si:H layers. These features include an ultra-high-vacuum deposition chamber, a load-lock chamber enabling samples to be loaded under vacuum, and an electrode assembly designed to produce a uniform electric field for decomposing the reactant gases. The quality of the A-Si:H films is examined. The dark conductivity activation energy, optical absorption, and photoconductivity are measured to characterize intrinsic, p-doped, and n-doped a-Si:H layers. The current vs. voltage characteristics under illuminated and dark conditions, and the quantum efficiency are measured on a-Si:H p-i-n diodes made in our system, and the results show that these diodes compare favorably to similar high-quality p-i-n diodes produced at other laboratories. An investigation into the effect of the light-induced degradation associated with a-Si:H on the performance of OASLMs is also presented. Finally, the transient photoresponse to laser pulses ranging in duration from 1 μs to 1 s over a range of temperatures from 100 to 300 K is investigated. We have discovered that the response time of the initial photoconductivity decay increases as the excitation-pulse duration increases

Development of Strained-Layer Superlattice (SLS) IR Detector Camera

Data.gov (United States)

National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide

International Nuclear Information System (INIS)

Polyakov, B; Prikulis, J; Grigorjeva, L; Millers, D; Daly, B; Holmes, J D; Erts, D

2007-01-01

Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 -4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 -3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed

Persistent photoconductivity and photo-responsible defect in 30 MeV-electron irradiated single crystal ZnO

International Nuclear Information System (INIS)

Kuriyama, K.; Matsumoto, K.; Kushida, K.; Xu, Q.

2010-01-01

Persistent photoconductivity (PPC) in 30-MeV electron irradiated ZnO single crystals is studied by excitation using light emitting diodes (LEDs) with various wavelengths. The decay transient of the photoconductivity shows relaxation times in the range of a few ten days for the illumination at 90 K and a few hours at room temperature. An electron paramagnetic resonance (EPR) signal with g-value = 2.005 appears after illumination of blue LED, suggesting the transfer from the artificially introduced oxygen vacancy of 2+ charge state to the metastable + charge state. Once generated, the metastable state does not immediately decay into the 2+ charge state because of energetic barriers of ∼190 meV, supporting the mechanism of PPC proposed by Van de Walle.

Analysis of periodically patterned metallic nanostructures for infrared absorber

Science.gov (United States)

Peng, Sha; Yuan, Ying; Long, Huabao; Liu, Runhan; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

With rapid advancement of infrared detecting technology in both military and civil domains, the photo-electronic performances of near-infrared detectors have been widely concerned. Currently, near-infrared detectors demonstrate some problems such as low sensitivity, low detectivity, and relatively small array scale. The current studies show that surface plasmons (SPs) stimulated over the surface of metallic nanostructures by incident light can be used to break the diffraction limit and thus concentrate light into sub-wavelength scale, so as to indicate a method to develop a new type of infrared absorber or detector with very large array. In this paper, we present the design and characterization of periodically patterned metallic nanostructures that combine nanometer thickness aluminum film with silicon wafer. Numerical computations show that there are some valleys caused by surface plasmons in the reflection spectrum in the infrared region, and both red shift and blue shift of the reflection spectrum were observed through changing the nanostructural parameters such as angle α and diameters D. Moreover, the strong E-field intensity is located at the sharp corner of the nano-structures.

Barrier controlled carrier trapping of extended defects in CdZnTe detector

International Nuclear Information System (INIS)

Guo, Rongrong; Jie, Wanqi; Xu, Yadong; Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie

2015-01-01

Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established

Growth, optical, electrical and photoconductivity studies of a novel nonlinear optical single crystal: Mercury cadmium chloride thiocyanate

Science.gov (United States)

Kumar, S. M. Ravi; Selvakumar, S.; Sagayaraj, P.; Anbarasi, A.

2015-02-01

SCN- ligand based organometallic non-linear optical mercury cadmium chloride thiocyanate (MCCTC) crystals are grown from water plus methanol mixed solvent by slow evaporation technique. The grown crystals are confirmed by single crystal X-ray diffraction analysis which reveals that the MCCTC belongs to rhombohedral system with R3c space group. MCCTC exhibits a SHG efficiency which is nearly 17 times more than that of KDP. The dielectric constant, dielectric loss measurements of the sample have been carried out for different frequencies (100 Hz to 5 MHz) and, temperatures (308 to 388 K) and the results are discussed. Photoconductivity study confirms that the title compound possesses negative photoconducting nature. The surface morphology of MCCTC was also investigated

Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

International Nuclear Information System (INIS)

Gaubas, E.; Jurs e-dot nas, S.; Tomasiunas, R.; Vaitkus, J.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.

2005-01-01

The influence of radiation defects on photoconductivity transients and photoluminescence (PL) spectra have been examined in semi-insulating GaN epitaxial layers grown on bulk n-GaN/sapphire substrates. Defects induced by 10-keV X-ray irradiation with a dose of 600Mrad and 100-keV neutrons with fluences of 5x10 14 and 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the radiation defect density. A simultaneous decrease with radiation-induced defect density is also observed in the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime, which is due to excess carrier multi-trapping. The decay can be described by the stretched exponential approximation exp[-(t/τ) α ] with different values of α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The value of the fracton dimension d s of the disordered structure, evaluated as d s =2α/(1-α), changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, implying percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiation

Colloidal Quantum-Dot Photodetectors Exploiting Multiexciton Generation

KAUST Repository

Sukhovatkin, V.

2009-06-18

Multiexciton generation (MEG) has been indirectly observed in colloidal quantum dots, both in solution and the solid state, but has not yet been shown to enhance photocurrent in an optoelectronic device. Here, we report a class of solution-processed photoconductive detectors, sensitive in the ultraviolet, visible, and the infrared, in which the internal gain is dramatically enhanced for photon energies Ephoton greater than 2.7 times the quantum-confined bandgap Ebandgap. Three thin-film devices with different quantum-confined bandgaps (set by the size of their constituent lead sulfide nanoparticles) show enhancement determined by the bandgap-normalized photon energy, Ephoton/Ebandgap, which is a clear signature of MEG. The findings point to a valuable role for MEG in enhancing the photocurrent in a solid-state optoelectronic device. We compare the conditions on carrier excitation, recombination, and transport for photoconductive versus photovoltaic devices to benefit from MEG.

Novel Heterongineered Detectors for Multi-Color Infrared Sensing

Science.gov (United States)

2012-01-30

a) Sequential but collocated two-color detection capabilities of type II InAsGaSb SLS detector based on an nBn design and (b) Simultaneous and...captions: Figure 1. Heterostructure Schematic of (a) PbIbN Design, (b) Dual Color Detector Design with flat band energy lineups . Figure 2. (a) Spectral

Modified electron beam induced current technique for in(Ga)As/InAsSb superlattice infrared detectors

Science.gov (United States)

Yoon, N.; Reyner, C. J.; Ariyawansa, G.; Duran, J. M.; Scheihing, J. E.; Mabon, J.; Wasserman, D.

2017-08-01

Electron beam induced current (EBIC) measurements provide a powerful tool for characterizing semiconductor based materials and devices. By measuring the current generated by the electron beam of a scanning electron microscope (SEM), EBIC allows us to extract the minority carrier diffusion length (L) and the surface recombination velocity to diffusivity ratio (S/D) of a material. When combined with information on minority carrier lifetime (τ), for instance from time-resolved photoluminescence measurements, the minority carrier mobility of the material can be extracted. However, the EBIC technique relies heavily on the accurate modeling of the carrier generation and collection process. Traditionally, this was achieved using a combination of empirical analytical expressions (and later Monte Carlo simulations) for carrier generation and analytical diffusion/recombination expressions for carrier collection. This approach introduces significant uncertainties into the extracted material parameters. Here, we present a numerical approach to EBIC modeling which improves the spatial resolution of our model, while also retaining information regarding the relative EBIC signal as a function of incident beam energies and currents. We apply this technique to investigate the temperature dependent minority carrier mobility of InAs/InAsSb and InGaAs/InAsSb strained layer superlattice infrared detectors and compare our results to the values obtained using external quantum efficiency measurements of the same samples. Our approach not only allows for an improvement in the uncertainty of the extracted material parameters, but also offers insight into the material and device behavior as a function of nonequilibrium carrier concentration. The technique presented here offers potentially improved characterization of not only infrared detectors, but a range of semiconductor-based devices.

Time resolved spectra in the infrared absorption and emission from shock heated hydrocarbons

Science.gov (United States)

Bauer, S. H.; Borchardt, D. B.

1990-07-01

We have extended the wavelength range of our previously constructed multichannel, fast recording spectrometer to the mid-infrared. With the initial configuration, using a silicon-diode (photovoltaic) array, we recorded light intensities simultaneously at 20 adjacent wavelengths, each with 20 μs time resolution. For studies in the infrared the silicon diodes are replaced by a 20 element PbSe (photoconducting) array of similar dimensions (1×4 mm/element), cooled by a three-stage thermoelectric device. These elements have useful sensitivities over 1.0-6.7 μm. Three interchangeable gratings in a 1/4 m monochromator cover the following spectral ranges: 1.0-2.5 μm (resolution 33.6 cm-1) 2.5-4.5 μm (16.8 cm-1) 4.0-6.5 μm (16.7 cm-1). Incorporated in the new housing there are individually controlled bias-power sources for each detector, two stages of analogue amplification and a 20-line parallel output to the previously constructed digitizer, and record/hold computer. The immediate application of this system is the study of emission and absorption spectra of shock heated hydrocarbons-C2H2, C4H4 and C6H6-which are possible precursors of species that generate infrared emissions in the interstellar medium. It has been recently proposed that these radiations are due to PAH that emit in the infrared upon relaxation from highly excited states. However, it is possible that such emissions could be due to shock-heated low molecular-weight hydrocarbons, which are known to be present in significant abundances, ejected into the interstellar medium during stellar outer atmospheric eruptions. The full Swan band system appeared in time-integrated emission spectra from shock heated C2H2 (1% in Ar; T5eq~=2500K) no soot was generated. At low resolution the profiles on the high frequency side of the black body maximum show no distinctive features. These could be fitted to Planck curves, with temperatures that declined with time from an initial high that was intermediate between T5 (no

Far forward scattering on TOSCA tokamak using a detector array

International Nuclear Information System (INIS)

Cote, A.; Evans, D.E.

1987-01-01

A gaussian beam from a CW CO 2 , laser is directed across the vertical minor diameter of TOSCA tokamak where it undergoes collective scattering at angles within the beam divergence. Scattered radiation recombines with the unperturbed part of the beam on the detector, generating intensity oscillations whose spatial, temporal, and phase distributions convey information about the strength, scale length, frequency, and propagation direction of the plasma density fluctuations in which they originate. The distribution of these oscillations is measured across the diameter of the probe beam profile, either with a single photoconductive Ge:Hg detector over a sequence of plasma discharges, or with a 12-channel array of Ge:Hg detectors during a single discharge. A model describing counter-rotating waves, such as a poloidal structure encountered twice by the probe beam as it traverses the plasma, is able to furnish a satisfactory fit to the data. Use of the array provides a phase distribution from which the sense of rotation of the waves can be deduced. A dispersion relation with frequencies up to 250 kHz, wavenumbers in the range 60-300 m -1 , and a phase velocity of ≅ 6x10 3 ms -1 is found

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

International Nuclear Information System (INIS)

ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

2000-01-01

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

Photo-conductive detection of continuous THz waves via manipulated ultrafast process in nanostructures

Science.gov (United States)

Moon, Kiwon; Lee, Eui Su; Lee, Il-Min; Park, Dong Woo; Park, Kyung Hyun

2018-01-01

Time-domain and frequency-domain terahertz (THz) spectroscopy systems often use materials fabricated with exotic and expensive methods that intentionally introduce defects to meet short carrier lifetime requirements. In this study, we demonstrate the development of a nano-photomixer that meets response speed requirements without using defect-incorporated, low-temperature-grown (LTG) semiconductors. Instead, we utilized a thin InGaAs layer grown on a semi-insulating InP substrate by metal-organic chemical vapor deposition (MOCVD) combined with nano-electrodes to manipulate local ultrafast photo-carrier dynamics via a carefully designed field-enhancement and plasmon effect. The developed nano-structured photomixer can detect continuous-wave THz radiation up to a frequency of 2 THz with a peak carrier collection efficiency of 5%, which is approximately 10 times better than the reference efficiency of 0.4%. The better efficiency results from the high carrier mobility of the MOCVD-grown InGaAs thin layer with the coincidence of near-field and plasmon-field distributions in the nano-structure. Our result not only provides a generally applicable methodology for manipulating ultrafast carrier dynamics by means of nano-photonic techniques to break the trade-off relation between the carrier lifetime and mobility in typical LTG semiconductors but also contributes to mass-producible photo-conductive THz detectors to facilitate the widespread application of THz technology.

A space simulation test chamber development for the investigation of radiometric properties of materials

Science.gov (United States)

Enlow, D. L.

1972-01-01

The design, fabrication, and preliminary utilization of a thermal vacuum space simulation facility are discussed. The facility was required to perform studies on the thermal radiation properties of materials. A test chamber was designed to provide high pumping speed, low pressure, a low photon level radiation background (via high emissivity, coated, finned cryopanels), internal heat sources for rapid warmup, and rotary and linear motion of the irradiated materials specimen. The radiation detection system consists of two wideband infrared photoconductive detectors, their cryogenic coolers, a cryogenic-cooled blackbody source, and a cryogenic-cooled optical radiation modulator.

Measurement of infrared optical constants with visible photons

Science.gov (United States)

Paterova, Anna; Yang, Hongzhi; An, Chengwu; Kalashnikov, Dmitry; Krivitsky, Leonid

2018-04-01

We demonstrate a new scheme for infrared spectroscopy with visible light sources and detectors. The technique relies on the nonlinear interference of correlated photons, produced via spontaneous parametric down conversion in a nonlinear crystal. Visible and infrared photons are split into two paths and the infrared photons interact with the sample under study. The photons are reflected back to the crystal, resembling a conventional Michelson interferometer. Interference of the visible photons is observed and it is dependent on the phases of all three interacting photons: pump, visible and infrared. The transmission coefficient and the refractive index of the sample in the infrared range can be inferred from the interference pattern of visible photons. The method does not require the use of potentially expensive and inefficient infrared detectors and sources, it can be applied to a broad variety of samples, and it does not require a priori knowledge of sample properties in the visible range.

Photoconductivity in reactively evaporated copper indium selenide thin films

Science.gov (United States)

Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

2014-01-01

Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

Development of Strained-Layer Superlattice (SLS) IR Detector Camera Project

Data.gov (United States)

National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

Science.gov (United States)

Park, Sun-Young; Elbersen, Rick; Huskens, Jurriaan; Gardeniers, Han; Lee, Joo-Yul; Mul, Guido; Heo, Jinhee

2017-07-01

Solar-to-hydrogen conversion by water splitting in photoelectrochemical cells (PECs) is a promising approach to alleviate problems associated with intermittency in solar energy supply and demand. Several interfacial resistances in photoelectrodes limit the performance of such cells, while the properties of interfaces are not easy to analyze in situ. We applied photoconductive-AFM to analyze the performance of WO3/p+n Si photoanodes, containing an ultra-thin metal interface of either Au or Pt. The Au interface consisted of Au nanoparticles with well-ordered interspacing, while Pt was present in the form of a continuous film. Photoconductive-AFM data show that upon illumination significantly larger currents are measured for the WO3/p+n Si anode equipped with the Au interface, as compared to the WO3/p+n Si anode with the Pt interface, in agreement with the better performance of the former electrode in a photoelectrochemical cell. The remarkable performance of the Au-containing electrode is proposed to be the result of favorable electron-hole recombination rates induced by the Au nanoparticles in a plasmon resonance excited state.

Infrared Sky Surveys

Science.gov (United States)

Price, Stephan D.

2009-02-01

A retrospective is given on infrared sky surveys from Thomas Edison’s proposal in the late 1870s to IRAS, the first sensitive mid- to far-infrared all-sky survey, and the mid-1990s experiments that filled in the IRAS deficiencies. The emerging technology for space-based surveys is highlighted, as is the prominent role the US Defense Department, particularly the Air Force, played in developing and applying detector and cryogenic sensor advances to early mid-infrared probe-rocket and satellite-based surveys. This technology was transitioned to the infrared astronomical community in relatively short order and was essential to the success of IRAS, COBE and ISO. Mention is made of several of the little known early observational programs that were superseded by more successful efforts.

Photoconductivity and bleaching of trapped electrons at 770C in irradiated methylcyclohexane

International Nuclear Information System (INIS)

Dolivo, G.; Gaeumann, T.

1977-01-01

The influence of the wavelength and intensity of the bleaching radiation on the thermoluminescence, thermoconductivity, optical absorption and photoconductivity of the methylcyclohexane, protonated and deuterated, was studied. The energy level scheme of the trapped electron in this alkane is very similar to that found in MTHF and 3-MP. The rate of bleaching of the trapped electrons is less in the deuterated product. (U.K.)

Wideband microwave generation with GaAs photoconductive switches

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Stein, J. M.; Obannon, B. J. J.

1991-07-01

We are using solid state photoconductive switches to generate wideband microwave pulses with peak powers to 20 MW. A parallel-plate Blumlein transmission line is used to directly feed an exponential taper antenna to produce single pulses with rise times of 200 ps and pulse durations of 340 ps (FWHM). Voltages up to 21 kV have been generated in a 1 cm tall, 12 cm wide parallel-plate line. With the switches operated in linear mode, we have demonstrated phasing of several switches to generate a coherent wave. Generated and radiated signals agree very well with numerical calculations. Radiation efficiencies approach 30 percent. The Blumlein dielectric can be changed to produce a damped waveform, thereby modifying the bandwidth of the signal. We have generated damped waveforms of up to 3 cycles using this method. The parallel-plate geometry lends itself to coupling to an antenna structure to radiate efficiently. The geometry also lends itself to expanding the generator in height and width. We have stacked two generators to nearly double the output power without degrading the pulse characteristics. Applications of ultrashort microwave pulses require a high repetition rate and long life from the generator. Life times of greater than 10(exp 5) shots have been seen occasionally at low to medium power densities. As the power density of a solid state photoconductive switch is increased, device life decreases. We have the capability to test devices at a repetition rate of 30 Hz and voltages to 25 kV. Preliminary data indicates that repeated pulse biasing (without switching) of large LEC grown devices in a slab geometry with fields as low as 30 kV/cm damages the switch and eventually leads to failure.

Wideband microwave generation with GaAs photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (United States)); Stein, J.M. (Rockwell International Corp., Albuquerque, NM (United States)); O' Bannon, B.J.J. (Rockwell International Corp., Anaheim, CA (United States))

1991-01-01

We are using solid state photoconductive switches to generate wideband microwave pulses with peak powers to 20 MW. A parallel-plate Blumlein transmission line is used to directly feed an exponential taper antenna to produce single pulses with rise times of 200 ps and pulse durations of 340 ps (FWHM). Voltages up to 21 kV have been generated in a 1 cm tall, 12 cm wide parallel-plate line. With the switches operated in linear mode, we have demonstrated phasing of several switches to generate a coherent wave. Generated and radiated signals agree very well with numerical calculations. Radiation efficiencies approach 30%. The Blumlein dielectric can be changed to produce a damped waveform, thereby modifying the bandwidth of the signal. We have generated damped waveforms of up to 3 cycles using this method. The parallel-plate geometry lends itself to coupling to an antenna structure to radiate efficiently. The geometry also lends itself to expanding the generator in height and width. We have stacked two generators to nearly double the output power without degrading the pulse characteristics. Applications of ultrashort microwave pulses (UWB radar, HPM weapons) require a high repetition rate and long life from the generator. Life times of >10{sup 5} shots have been seen occasionally at low to medium power densities. As the power density of a solid state photoconductive switch is increased, device life decreases. We have the capability to test devices at a repetition rate of 30 Hz and voltages to 25 kV. Preliminary data indicates that repeated pulse biasing (without switching) of large LEC grown devices in a slab geometry with fields as low as 30 kV/cm damages the switch and eventually leads to failure. 6 refs., 10 figs.

Mechanism of band gap persistent photoconductivity (PPC) in SnO{sub 2} nanoscrystalline films: Nature of local states, simulation of PPC and comparison with experiment

Energy Technology Data Exchange (ETDEWEB)

Brinzari, V., E-mail: vbrinzari@mail.ru

2017-07-31

Highlights: • RT photoconductivity (PC) model of response and decay in SnO{sub 2} film was proposed. • Surface BG electronic states are a source for excitation by photons with hv < E{sub g}. • BG electron LDOS determines the magnitude and time of PC response. • Intergrain barrier height related to oxygen ionosorption determines PC decay time. • Structural disordering results in stretched exponential behavior of PC decay. - Abstract: A phenomenological model of room temperature photoconductivity in nanocrystalline SnO{sub 2} under photon excitation below the fundamental bandgap based on electronic states located at the bottom part of the band gap was proposed. Nature of these states is related to the surface oxygen vacancies and Sn-derived electronic states. Appropriate distribution of these states was considered. Numerical simulation of the photoconductivity response and decay on the basis of balance rate equation for excited electrons and immobile holes was done. Analysis revealed that response time is determined by the photoionization cross section of these states and intensity of illumination. Stationary photoresponse is saturated due to the limited number of these states. Intergrain potential barrier that originated due to the ionosorbed oxygen is the main factor limiting the reverse annihilation process and determining the photoconductivity decay time. Stretched exponential behavior of the photoconductivity decay was interpreted in terms of structural and electronic film disordering that results in asymmetric probability distribution of intergrain barrier heights and corresponding distribution of time constants.

Two-color infrared detector

Science.gov (United States)

Klem, John F; Kim, Jin K

2014-05-13

A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

35-kV GaAs subnanosecond photoconductive switches

Science.gov (United States)

Pocha, Michael D.; Druce, Robert L.

1990-12-01

High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described.

Correlation of the plasmon-enhanced photoconductance and photovoltaic properties of core-shell Au@TiO{sub 2} network

Energy Technology Data Exchange (ETDEWEB)

Yang, Yiqun [Department of Chemistry, Kansas State University, Manhattan, Kansas 66506 (United States); Wu, Judy [Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045 (United States); Li, Jun, E-mail: junli@ksu.edu [Department of Chemistry, Kansas State University, Manhattan, Kansas 66506 (United States); College of Chemistry and Chemical Engineering, Hubei Normal University, Huangshi, Hubei 435002 (China)

2016-08-29

This study reveals the contribution of hot electrons from the excited plasmonic nanoparticles in dye sensitized solar cells (DSSCs) by correlating the photoconductance of a core-shell Au@TiO{sub 2} network on a micro-gap electrode and the photovolatic properties of this material as photoanodes in DSSCs. The distinct wavelength dependence of these two devices reveals that the plasmon-excited hot electrons can easily overcome the Schottky barrier at Au/TiO{sub 2} interface in the whole visible wavelength range and transfer from Au nanoparticles into the TiO{sub 2} network. The enhanced charge carrier density leads to higher photoconductance and facilitates more efficient charge separation and photoelectron collection in the DSSCs.

Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

Science.gov (United States)

Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

2018-04-01

Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

Science.gov (United States)

Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

2017-01-01

We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

Low background infrared (LBIR) facility

Data.gov (United States)

Federal Laboratory Consortium — The Low background infrared (LBIR) facility was originally designed to calibrate user supplied blackbody sources and to characterize low-background IR detectors and...

Depth sensitivity and source-detector separations for near infrared spectroscopy based on the Colin27 brain template.

Directory of Open Access Journals (Sweden)

Gary E Strangman

Full Text Available Understanding the spatial and depth sensitivity of non-invasive near-infrared spectroscopy (NIRS measurements to brain tissue-i.e., near-infrared neuromonitoring (NIN - is essential for designing experiments as well as interpreting research findings. However, a thorough characterization of such sensitivity in realistic head models has remained unavailable. In this study, we conducted 3,555 Monte Carlo (MC simulations to densely cover the scalp of a well-characterized, adult male template brain (Colin27. We sought to evaluate: (i the spatial sensitivity profile of NIRS to brain tissue as a function of source-detector separation, (ii the NIRS sensitivity to brain tissue as a function of depth in this realistic and complex head model, and (iii the effect of NIRS instrument sensitivity on detecting brain activation. We found that increasing the source-detector (SD separation from 20 to 65 mm provides monotonic increases in sensitivity to brain tissue. For every 10 mm increase in SD separation (up to ~45 mm, sensitivity to gray matter increased an additional 4%. Our analyses also demonstrate that sensitivity in depth (S decreases exponentially, with a "rule-of-thumb" formula S=0.75*0.85(depth. Thus, while the depth sensitivity of NIRS is not strictly limited, NIN signals in adult humans are strongly biased towards the outermost 10-15 mm of intracranial space. These general results, along with the detailed quantitation of sensitivity estimates around the head, can provide detailed guidance for interpreting the likely sources of NIRS signals, as well as help NIRS investigators design and plan better NIRS experiments, head probes and instruments.

A flexible infrared sensor for tissue oximetry

DEFF Research Database (Denmark)

Petersen, Søren Dahl; Thyssen, Anders; Engholm, Mathias

2013-01-01

We present a flexible infrared sensor for use in tissue oximetry with the aim of treating prematurely born infants. The sensor will detect the oxygen saturation in brain tissue through near infrared spectroscopy. The sensor itself consists of several individual silicon photo detectors fully...

High Temperature Superconductor Resonator Detectors

Data.gov (United States)

National Aeronautics and Space Administration — High Temperature Superconductor (HTS) infrared detectors were studied for years but never matured sufficiently for infusion into instruments. Several recent...

3D-Printing of inverted pyramid suspending architecture for pyroelectric infrared detectors with inhibited microphonic effect

Science.gov (United States)

Xu, Qing; Zhao, Xiangyong; Li, Xiaobing; Deng, Hao; Yan, Hong; Yang, Linrong; Di, Wenning; Luo, Haosu; Neumann, Norbert

2016-05-01

A sensitive chip with ultralow dielectric loss based on Mn doped PMNT (71/29) has been proposed for high-end pyroelectric devices. The dielectric loss at 1 kHz is 0.005%, one order lower than the minimum value reported so far. The detective figure of merit (Fd) is up to 92.6 × 10-5 Pa-1/2 at 1 kHz and 53.5 × 10-5 Pa-1/2 at 10 Hz, respectively. In addition, an inverted pyramid suspending architecture for supporting the sensitive chip has been designed and manufactured by 3D printing technology. The combination of this sensitive chip and the proposed suspending architecture largely enhances the performance of the pyroelectric detectors. The responsivity and specific detectivity are 669,811 V/W and 3.32 × 109 cm Hz1/2/W at 10 Hz, respectively, 1.9 times and 1.5 times higher than those of the highest values in literature. Furthermore, the microphonic effect can be largely inhibited according to the theoretical and experimental analysis. This architecture will have promising applications in high-end and stable pyroelectric infrared detectors.

Photoconductivity studies on amorphous and crystalline TiO{sub 2} films doped with gold nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Valverde-Aguilar, G.; Garcia-Macedo, J.A. [Universidad Nacional Autonoma de Mexico, Departamento de Estado Solido, Instituto de Fisica, Mexico D.F. (Mexico); Renteria-Tapia, V. [Universidad de Guadalajara, Centro Universitario de los Valles, Departamento de Ciencias Naturales y Exactas, Ameca, Jalisco (Mexico); Aguilar-Franco, M. [Universidad Nacional Autonoma de Mexico, Departamento de Fisica Quimica, Instituto de Fisica, Mexico D.F. (Mexico)

2011-06-15

In this work, amorphous and crystalline TiO{sub 2} films were synthesized by the sol-gel process at room temperature. The TiO{sub 2} films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100 C for 30 minutes and sintered at 520 C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO{sub 2} and TiO{sub 2}/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO{sub 2}/Au films are more photoconductive than the amorphous ones. (orig.)

Hexagonal boron nitride neutron detectors with high detection efficiencies

Science.gov (United States)

Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

2018-01-01

Neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

Energy Technology Data Exchange (ETDEWEB)

Jiang, Y. C.; Gao, J., E-mail: jugao@hku.hk [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu (China)

2016-08-22

Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

NARCIS (Netherlands)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T.; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Guenter; Heiss, Wolfgang; Hesser, Günter

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region,

Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

Science.gov (United States)

Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

2017-08-01

The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

Insight on quantum dot infrared photodetectors

International Nuclear Information System (INIS)

Rogalski, A

2009-01-01

The paper presents possible future developments of quantum dot infrared photodetectors (QDIPs). At the beginning the fundamental properties of QDIPs are summarized. Next, investigations of the performance of QDIPs, as compared to other types of infrared photodetectors, are presented. Theoretical predictions indicate that only type II superlattice photodiodes and QDIPs are expected to compete with HgCdTe photodiodes. QDIPs theoretically have several advantages compared with QWIPs including the normal incidence response, lower dark current, higher operating temperature, higher responsivity and detectivity. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. Comparison of QDIP performance with HgCdTe detectors gives evidence that the QDIP is suitable for high operation temperature. It can be expected that an improvement in technology and design of QDIP detectors will make it possible to achieve both high sensitivity and fast response useful for practical application at room temperature focal plane arrays. However, so far the QDIP devices have not fully demonstrated their potential advantages.

Infrared

Science.gov (United States)

Vollmer, M.

2013-11-01

'Infrared' is a very wide field in physics and the natural sciences which has evolved enormously in recent decades. It all started in 1800 with Friedrich Wilhelm Herschel's discovery of infrared (IR) radiation within the spectrum of the Sun. Thereafter a few important milestones towards widespread use of IR were the quantitative description of the laws of blackbody radiation by Max Planck in 1900; the application of quantum mechanics to understand the rotational-vibrational spectra of molecules starting in the first half of the 20th century; and the revolution in source and detector technologies due to micro-technological breakthroughs towards the end of the 20th century. This has led to much high-quality and sophisticated equipment in terms of detectors, sources and instruments in the IR spectral range, with a multitude of different applications in science and technology. This special issue tries to focus on a few aspects of the astonishing variety of different disciplines, techniques and applications concerning the general topic of infrared radiation. Part of the content is based upon an interdisciplinary international conference on the topic held in 2012 in Bad Honnef, Germany. It is hoped that the information provided here may be useful for teaching the general topic of electromagnetic radiation in the IR spectral range in advanced university courses for postgraduate students. In the most general terms, the infrared spectral range is defined to extend from wavelengths of 780 nm (upper range of the VIS spectral range) up to wavelengths of 1 mm (lower end of the microwave range). Various definitions of near, middle and far infrared or thermal infrared, and lately terahertz frequencies, are used, which all fall in this range. These special definitions often depend on the scientific field of research. Unfortunately, many of these fields seem to have developed independently from neighbouring disciplines, although they deal with very similar topics in respect of the

Miniaturized multi channel infrared optical gas sensor system

Science.gov (United States)

Wöllenstein, Jürgen; Eberhardt, Andre; Rademacher, Sven; Schmitt, Katrin

2011-06-01

Infrared spectroscopy uses the characteristic absorption of the molecules in the mid infrared and allows the determination of the gases and their concentration. Especially by the absorption at longer wavelengths between 8 μm and 12 μm, the so called "fingerprint" region, the molecules can be measured with highest selectivity. We present an infrared optical filter photometer for the analytical determination of trace gases in the air. The challenge in developing the filter photometer was the construction of a multi-channel system using a novel filter wheel concept - which acts as a chopper too- in order to measure simultaneously four gases: carbon monoxide, carbon dioxide, methane and ammonia. The system consists of a broadband infrared emitter, a long path cell with 1.7m optical path length, a filter wheel and analogue and digital signal processing. Multi channel filter photometers normally need one filter and one detector per target gas. There are small detection units with one, two or more detectors with integrated filters available on the market. One filter is normally used as reference at a wavelength without any cross-sensitivities to possible interfering gases (e.g. at 3.95 μm is an "atmospheric window" - a small spectral band without absorbing gases in the atmosphere). The advantage of a filter-wheel set-up is that a single IR-detector can be used, which reduces the signal drift enormously. Pyroelectric and thermopile detectors are often integrated in these kinds of spectrometers. For both detector types a modulation of the light is required and can be done - without an additional chopper - with the filter wheel.

Ultrasensitive solution-cast quantum dot photodetectors

International Nuclear Information System (INIS)

Konstantatos, G.; Howard, I.; Fischer, A.; Hoogland, S.; Clifford, J.; Klem, E.; Levina, L.; Sargent, E.H.

2007-01-01

Solution-processed electronic and optoelectronic devices offer low cost, large device area, physical flexibility and convenient materials integration compared to conventional epitaxially grown, lattice-matched, crystalline semiconductor devices. Although the electronic or optoelectronic performance of these solution-processed devices is typically inferior to that of those fabricated by conventional routes, this can be tolerated for some applications in view of the other benefits. Here we report the fabrication of solution-processed infrared photodetectors that are superior in their normalized detectivity (D * , the figure of merit for detector sensitivity) to the best epitaxially grown devices operating at room temperature. We produced the devices in a single solution-processing step, overcoating a prefabricated planar electrode array with an unpatterned layer of Pbs colloidal quantum dot nanocrystals. The devices showed large photoconductive gains with responsivities greater than 10 3 AW -1 . The best devices exhibited a normalized detectivity D * of 1.8 x 10 13 jones (1 jones= 1 cm Hz 1/2 W -1 ) at 1.3μm at room temperature: today's highest performance infrared photodetectors are photovoltaic devices made from epitaxially grown InGaAs that exhibit peak D * in the 10 12 ) jones range at room temperature, whereas the previous record for D * from a photoconductive detector lies at 10 11 jones. The tailored selection of absorption onset energy through the quantum size effect, combined with deliberate engineering of the sequence of nanoparticle fusing and surface trap functionalization, underlie the superior performance achieved in this readily fabricated family of devices. (author)

Fabrication of Ultrasensitive Transition Edge Sensor Bolometric Detectors for HIRMES

Science.gov (United States)

Brown, Ari-David; Brekosky, Regis; Franz, David; Hsieh, Wen-Ting; Kutyrev, Alexander; Mikula, Vilem; Miller, Timothy; Moseley, S. Harvey; Oxborrow, Joseph; Rostem, Karwan;

Interpretation of photocurrent correlation measurements used for ultrafast photoconductive switch characterization

DEFF Research Database (Denmark)

Jacobsen, R. H.; Birkelund, Karen; Holst, T.

1996-01-01

of the switch. By using both photocurrent measurements and terahertz spectroscopy we verify the importance of space-charge effects on the carrier dynamics. Photocurrent nonlinearities and coherent effects are discussed as they appear in the correlation signals. An analysis based on a simple model allows......Photocurrent correlation measurements used for the characterization of ultrafast photoconductive switches based on GaAs and silicon-on-sapphire are demonstrated. The correlation signal arises from the interplay of the photoexcited carriers, the dynamics of the bias field and a subsequent recharging...

Topological insulator infrared pseudo-bolometer with polarization sensitivity

Energy Technology Data Exchange (ETDEWEB)

Sharma, Peter Anand

2017-10-25

Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

On the excess photon noise in single-beam measurements with photo-emissive and photo-conductive cells

NARCIS (Netherlands)

Alkemade, C.T.J.

In this paper the so-called excess photon noise is theoretically considered with regard to noise power measurements with a single, illumined photo-emissive or photo-conductive cell. Starting from a modification of Mandel's stochastic association of the emission of photo-electrons with wave

Evolution of miniature detectors and focal plane arrays for infrared sensors

Science.gov (United States)

Watts, Louis A.

1993-06-01

Sensors that are sensitive in the infrared spectral region have been under continuous development since the WW2 era. A quest for the military advantage of 'seeing in the dark' has pushed thermal imaging technology toward high spatial and temporal resolution for night vision equipment, fire control, search track, and seeker 'homing' guidance sensing devices. Similarly, scientific applications have pushed spectral resolution for chemical analysis, remote sensing of earth resources, and astronomical exploration applications. As a result of these developments, focal plane arrays (FPA) are now available with sufficient sensitivity for both high spatial and narrow bandwidth spectral resolution imaging over large fields of view. Such devices combined with emerging opto-electronic developments in integrated FPA data processing techniques can yield miniature sensors capable of imaging reflected sunlight in the near IR and emitted thermal energy in the Mid-wave (MWIR) and longwave (LWIR) IR spectral regions. Robotic space sensors equipped with advanced versions of these FPA's will provide high resolution 'pictures' of their surroundings, perform remote analysis of solid, liquid, and gas matter, or selectively look for 'signatures' of specific objects. Evolutionary trends and projections of future low power micro detector FPA developments for day/night operation or use in adverse viewing conditions are presented in the following test.

Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector

Science.gov (United States)

Mao, Yifei; Zhang, Jijun; Lin, Liwen; Lai, Jianming; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Wang, Linjun

2018-04-01

Different wavelength IR light (770-1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) of CdZnTe achieved 10-2 cm2 V-1 when the IR wavelength was in the range of 820-920 nm, but decreased to 1 × 10-4 cm2 V-1 when the wavelength was longer than 920 nm. The mechanism about how IR light affecting the carrier transport property of CdZnTe detector was analyzed with Shockley-Read-Hall model. The defect of doubly ionized Cd vacancy ([VCd]2-) was found to be the main factor that assist IR light affecting the μτ of CdZnTe detector. The photoconductive experiment under 770-1150 nm IR illumination was carried out, and three kinds of photocurrent curve were detected and analyzed by solving the Hecht equation. The experiments demonstrated the effect of [VCd]2- defect on the carrier transport property of CdZnTe detector under IR illumination.

Technique of infrared synchrotron acceleration diagnostics

International Nuclear Information System (INIS)

Mal'tsev, A.A.; Mal'tsev, M.A.

1997-01-01

Techniques of measuring of current and geometric parameters and evaluating of energy parameters of the ring bunch of relativistic low-energy electrons have been presented. They have been based on using the synchrotron radiation effect in its infrared spectral part. Fast infrared detectors have provided radiation detection in the spectral range Δλ ≅ 0.3-45 μm. The descriptions of some data monitoring and measuring systems developed in JINR for the realization of techniques of the infrared synchrotron acceleration diagnostics have been given. Infrared optics elements specially developed have been used in these systems

Effective deleting of residual photoconductivity in high-resistance layers GaAs

International Nuclear Information System (INIS)

Sadaev, B.S.; Kadirova, I.T.; Sharipov, E.I.

2004-01-01

Full text: The phenomenon of residual photoconductivity as the storage of optical memory (OM) represents practical interest in micro and optoelectronics. The finding - out of the nature OM represents undoubtedly and scientific interest. Now residual photoconductivity (RPC) is explained by potential barriers arising because of non-monocharacteristical of distribution components of the semiconductor or carriers of a current in volume. Depending on a nature non-monocharacteristical the time relaxation RPC changes in a wide limit. The special interest represents RPC created by impurity. In the given work the results of research of a nature RPC created photos by ionization of the filled centres of chrome in compensated epitaxilogic layers arsenide galls are resulted. Epitaxilogic layers were brought up by a vertical method ZFE. Highness was reached (achieved) by special indemnification of the residual donors deep acceptors of chrome. Substrates served n-GoAs. Lassitude of i-layers has made 70-80 microns. Specific resistance of layers has made (1/3) 108 om·sm. (T= 300 K). The structures were photosensitive as at low (T = 77 K) and at room temperatures. The photosensitivity of structures in impurity to a strip of absorption chrome (= 1,4 microns) was comparable (compared) with own. The researches show, that the structures have RPC. Size RPC the greatest ambassador impurity of illumination is carrying out photoionization Cr2 + - of the centres. That is established, RPC impurity of a photocurrent is effectively erased only at certain length of a wave of external illumination

Doped cadmium sulfide particles in polymer matrix: X-ray diffraction, optical reflectivity and photoconductivity study

Czech Academy of Sciences Publication Activity Database

Franc, Jiří; Nešpůrek, Stanislav; Makarova, Marina; Krtil, Petr

2008-01-01

Roč. 10, č. 3 (2008), s. 520-527 ISSN 1454-4164 R&D Projects: GA MPO FT-TA2/018 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z40500505 Keywords : cadmium sulphide * doping * polymer binder * photoconductivity Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.577, year: 2008

Microwave pulse generation by photoconductive switching

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L.

1989-03-14

Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories (1) the frozen wave generator or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200..mu..J optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency. 3 refs., 6 figs.

Microwave pulse generation by photoconductive switching

Science.gov (United States)

Pocha, M. D.; Druce, R. L.

1989-03-01

Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories: (1) the frozen wave generator, or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200 microJ optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency.

Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

International Nuclear Information System (INIS)

Gaubas, E.; Pobedinskas, P.; Vaitkus, J.; Uleckas, A.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.; Aujol, E.; Beaumont, B.; Faurie, J.-P.; Gibart, P.

2005-01-01

The effect of native and radiation induced defects on the photoconductivity transients and photoluminescence spectra have been examined in GaN epitaxial layers of 2.5 and 12μm thickness grown on bulk n-GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). For comparison, free-standing GaN as-grown samples of 500μm thickness, fabricated by hydride vapor phase epitaxy (HVPE), were investigated. Manifestation of defects induced by 10-keV X-ray irradiation with the dose of 600Mrad and 100-keV neutrons with the fluences of 5x10 14 and 10 16 cm -2 as well as of 24GeV/c protons with fluence 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the native and radiation defects density. Synchronous decrease of the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively, with density of radiation-induced defects is observed. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime in the photoconductivity transients, which is due to excess-carrier multi-trapping. The decay fits the stretched exponent approximation exp[-(t/τ) α ] with the different factors α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The fracton dimension d s of disordered structure changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, and it implies the percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiations

Characterization and Analysis of a Multicolor Quantum Well Infrared Photodetector

National Research Council Canada - National Science Library

Hanson, Nathan A

2006-01-01

...), mid-wavelength infrared (MWIR), and long-wavelength infrared (LWIR). Through photocurrent spectroscopy and performance analysis, this prototype detector can be classified and prepared for possible future use within the U.S. Armed Forces...

Shot-Noise-Limited Dual-Beam Detector for Atmospheric Trace-Gas Monitoring with Near-Infrared Diode Lasers

Science.gov (United States)

Durry, Georges; Pouchet, Ivan; Amarouche, Nadir; Danguy, Théodore; Megie, Gerard

2000-10-01

A dual-beam detector is used to measure atmospheric trace species by differential absorption spectroscopy with commercial near-infrared InGaAs laser diodes. It is implemented on the Spectrom tre Diodes Laser Accordables, a balloonborne tunable diode laser spectrometer devoted to the in situ monitoring of CH 4 and H 2 O. The dual-beam detector is made of simple analogical subtractor circuits combined with InGaAs photodiodes. The detection strategy consists in taking the balanced analogical difference between the reference and the sample signals detected at the input and the output of an open optical multipass cell to apply the full dynamic range of the measurements (16 digits) to the weak molecular absorption information. The obtained sensitivity approaches the shot-noise limit. With a 56-m optical cell, the detection limit obtained when the spectra is recorded within 8 ms is 10 4 (expressed in absorbance units). The design and performances of both a simple substractor and an upgraded feedback substractor circuit are discussed with regard to atmospheric in situ CH 4 absorption spectra measured in the 1.653- m region. Mixing ratios are obtained from the absorption spectra by application of a nonlinear least-squares fit to the full molecular line shape in conjunction with in situ P and T measurements.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Concept and design of a beam blanker with integrated photoconductive switch for ultrafast electron microscopy.

Science.gov (United States)

Weppelman, I G C; Moerland, R J; Hoogenboom, J P; Kruit, P

2018-01-01

We present a new method to create ultrashort electron pulses by integrating a photoconductive switch with an electrostatic deflector. This paper discusses the feasibility of such a system by analytical and numerical calculations. We argue that ultrafast electron pulses can be achieved for micrometer scale dimensions of the blanker, which are feasible with MEMS-based fabrication technology. According to basic models, the design presented in this paper is capable of generating 100 fs electron pulses with spatial resolutions of less than 10 nm. Our concept for an ultrafast beam blanker (UFB) may provide an attractive alternative to perform ultrafast electron microscopy, as it does not require modification of the microscope nor realignment between DC and pulsed mode of operation. Moreover, only low laser pulse energies are required. Due to its small dimensions the UFB can be inserted in the beam line of a commercial microscope via standard entry ports for blankers or variable apertures. The use of a photoconductive switch ensures minimal jitter between laser and electron pulses. Copyright © 2017 Elsevier B.V. All rights reserved.

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

Heterojunction Structures for Photon Detector Applications

Science.gov (United States)

2014-07-21

IR: Fourier-transform infrared FTO: Fluorine doped tin oxide G-R: generation-recombination HEIWIP: heterojunction interfacial workfunction internal...SECURITY CLASSIFICATION OF: The work presented here report findings in (1) infrared detectors based on p-GaAs/AlGaAs heterojunctions , (2) J and H...aggregate sensitized heterojunctions for solar cell and photon detection applications, (3) heterojunctions sensitized with quantum dots as low cost

Determination of surface recombination velocity and bulk lifetime in detector grade silicon and germanium crystals

International Nuclear Information System (INIS)

Derhacobian, N.; Fine, P.; Walton, J.T.; Wong, Y.K.; Rossington, C.S.; Luke, P.N.

1993-10-01

Utility of a noncontact photoconductive decay (PCD) technique is demonstrated in measuring bulk lifetime, τ B , and surface recombination velocity, S, in detector grade silicon and germanium crystals. We show that the simple analytical equations which relate the observed effective lifetimes in PCD transients to τ B and S have a limited range of applicability. The noncontact PCD technique is used to determine the effect of several surface treatments on the observed effective lifetimes in Si and Ge. A degradation of the effective lifetime in Si is reported as result of the growth of a thin layer of native oxide at room temperature under atmospheric conditions

Photoconductive ZnO Films Printed on Flexible Substrates by Inkjet and Aerosol Jet Techniques

Science.gov (United States)

Winarski, D. J.; Kreit, E.; Heckman, E. M.; Flesburg, E.; Haseman, M.; Aga, R. S.; Selim, F. A.

2018-02-01

Zinc oxide (ZnO) thin films have remarkable versatility in sensor applications. Here, we report simple ink synthesis and printing methods to deposit ZnO photodetectors on a variety of flexible and transparent substrates, including polyimide (Kapton), polyethylene terephthalate, cyclic olefin copolymer (TOPAS), and quartz. X-ray diffraction analysis revealed the dependence of the film orientation on the substrate type and sintering method, and ultraviolet-visible (UV-Vis) absorption measurements revealed a band edge near 380 nm. van der Pauw technique was used to measure the resistivity of undoped ZnO and indium/gallium-codoped ZnO (IGZO) films. IGZO films showed lower resistivity and larger average grain size compared with undoped ZnO films due to addition of In3+ and Ga3+, which act as donors. A 365-nm light-emitting diode was used to photoirradiate the films to study their photoconductive response as a function of light intensity at 300 K. The results revealed that ZnO films printed by aerosol jet and inkjet techniques exhibited five orders of magnitude photoconductivity, indicating that such films are viable options for use in flexible photodetectors.

Increasing sensitivity and angle-of-view of mid-wave infrared detectors by integration with dielectric microspheres

Energy Technology Data Exchange (ETDEWEB)

Allen, Kenneth W., E-mail: kenneth.allen@gtri.gatech.edu; Astratov, Vasily N., E-mail: astratov@uncc.edu [Department of Physics and Optical Science, Center for Optoelectronics and Optical Communications, University of North Carolina at Charlotte, Charlotte, North Carolina 28223-0001 (United States); Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Ohio 45433 (United States); UES, Dayton, Ohio 45433 (United States); Abolmaali, Farzaneh [Department of Physics and Optical Science, Center for Optoelectronics and Optical Communications, University of North Carolina at Charlotte, Charlotte, North Carolina 28223-0001 (United States); Duran, Joshua M.; Ariyawansa, Gamini; Limberopoulos, Nicholaos I. [Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Ohio 45433 (United States); Urbas, Augustine M. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)

2016-06-13

We observed up to 100 times enhancement of sensitivity of mid-wave infrared photodetectors in the 2–5 μm range by using photonic jets produced by sapphire, polystyrene, and soda-lime glass microspheres with diameters in the 90–300 μm range. By finite-difference time-domain (FDTD) method for modeling, we gain insight into the role of the microspheres refractive index, size, and alignment with respect to the detector mesa. A combination of enhanced sensitivity with angle-of-view (AOV) up to 20° is demonstrated for individual photodetectors. It is proposed that integration with microspheres can be scaled up for large focal plane arrays, which should provide maximal light collection efficiencies with wide AOVs, a combination of properties highly attractive for imaging applications.

Radiation detector. [100 A

Energy Technology Data Exchange (ETDEWEB)

Baker, P D; Hollands, D V

1975-12-04

A radiation detector is described in which the radiation is led to a sensor via a 100 A thick gold film filter, which reduces the infrared components of the irradiation to a greater extent than the ultra-violet component reaching the sensor.

Highly efficient quantum dot-based photoconductive THz materials and devices

Science.gov (United States)

Rafailov, E. U.; Leyman, R.; Carnegie, D.; Bazieva, N.

2013-09-01

We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, <=850 nm and <=1300 nm.

Novel mid-infrared imaging system based on single-mode quantum cascade laser illumination and upconversion

DEFF Research Database (Denmark)

Tomko, Jan; Junaid, Saher; Tidemand-Lichtenberg, Peter

2017-01-01

Compared to the visible or near-infrared (NIR) spectral regions, there is a lack of very high sensitivity detectors in the mid-infrared (MIR) that operate near room temperature. Upconversion of the MIR light to NIR light that is imaged using affordable, fast, and sensitive NIR detectors or camera...

Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

Science.gov (United States)

Schoenbach, K. H.; Joshi, R. P.; Peterkin, F.; Druce, R. L.

1995-05-01

The high gain effect was shown to be a threshold effect and was dependent on the photoactivation energy level. For the studied material, laser energy densities in the order of 10 mJ cm(sup - 2) for a laser pulse duration of 200 ps were needed to switch into the high gain mode. The observed supralinear behavior of the peak photoconductivity and the charge carrier lifetime can be accounted by the shifts in quasi Fermi levels and the occupancy of copper states within the forbidden gap. Numerical simulations were also presented that yielded quantitative values for the trapping cross sections and recombination center densities. From the perspective of applications, the GaAs:Si:Cu material had great potential for high-power repetitive switching and photodetection.

Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Schoenbach, K.H.; Joshi, R.P.; Peterkin, F. [Physical Electronics Research Institute, Old Dominion University, Norfolk, Virginia 23529 (United States); Druce, R.L. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

1995-05-15

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low-energy phototransistor application for the GaAs:Cu material system is presented. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Photoconductive GaN UV Detectors

National Research Council Canada - National Science Library

Baranowski, Jacek

1999-01-01

This report results from a contract tasking University of Warsaw as follows: The contractor will investigate the growth of GaN material using atmospheric pressure metalorganic chemical vapor deposition method (MOCVD...

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guzmán, Álvaro, E-mail: guzman@die.upm.es; Yamamoto, Kenji; Ulloa, J. M.; Hierro, Adrian [Instituto de Sistemas Optoelectrónicos y Microtecnología y Dept. Ingeniería Electrónica, Universidad Politécnica de Madrid, ETSI de Telecomunicación, Avda. Complutense 30, 28040 Madrid (Spain); Llorens, J. M. [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain)

2015-07-06

InAs/GaAs{sub 1−x}Sb{sub x} Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain and hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.

Photoconductance of Bulk Heterojunctions with Tunable Nanomorphology Consisting of P3HT and Naphtalene Diimide Siloxane Oligomers

NARCIS (Netherlands)

Grzegorczyk, W.J.; Ganesan, P.; Savenije, T.J.; Bavel, van S.; Loos, J.; Sudhölter, E.J.R.; Siebbeles, L.D.A.; Zuilhof, H.

2009-01-01

The relation between the morphology, optical, and photoconductive properties of thin-film bulk heterojunctions of poly(3-hexylthiophene) (P3HT) with a series of electron-accepting siloxanes with a different number (x = 2, 4, 5) of pendant naphthalene diimide (NDIS) moieties is reported. All NDIS

Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

Czech Academy of Sciences Publication Activity Database

Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

2011-01-01

Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-02-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Ultrafast terahertz photoconductivity in nanocrystalline mesoporous TiO.sub.2./sub. films

Czech Academy of Sciences Publication Activity Database

Němec, Hynek; Kužel, Petr; Kadlec, Filip; Fattakhova-Rohlfing, D.; Szeifert, J.; Bein, T.; Kalousek, Vít; Rathouský, Jiří

2010-01-01

Roč. 96, č. 6 (2010), 062103/1-062103/3 ISSN 0003-6951 R&D Projects: GA ČR(CZ) GP202/09/P099; GA AV ČR(CZ) IAA100100902; GA ČR GA104/08/0435; GA ČR GD203/08/H032 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z40400503 Keywords : time-resolved terahertz spectroscopy * ultrafast photoconductivity * TiO 2 nanoparticles * brick and mortar technology Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010

Self-adaptive calibration for staring infrared sensors

Science.gov (United States)

Kendall, William B.; Stocker, Alan D.

1993-10-01

This paper presents a new, self-adaptive technique for the correlation of non-uniformities (fixed-pattern noise) in high-density infrared focal-plane detector arrays. We have developed a new approach to non-uniformity correction in which we use multiple image frames of the scene itself, and take advantage of the aim-point wander caused by jitter, residual tracking errors, or deliberately induced motion. Such wander causes each detector in the array to view multiple scene elements, and each scene element to be viewed by multiple detectors. It is therefore possible to formulate (and solve) a set of simultaneous equations from which correction parameters can be computed for the detectors. We have tested our approach with actual images collected by the ARPA-sponsored MUSIC infrared sensor. For these tests we employed a 60-frame (0.75-second) sequence of terrain images for which an out-of-date calibration was deliberately used. The sensor was aimed at a point on the ground via an operator-assisted tracking system having a maximum aim point wander on the order of ten pixels. With these data, we were able to improve the calibration accuracy by a factor of approximately 100.

An efficient shutter-less non-uniformity correction method for infrared focal plane arrays

Science.gov (United States)

Huang, Xiyan; Sui, Xiubao; Zhao, Yao

2017-02-01

The non-uniformity response in infrared focal plane array (IRFPA) detectors has a bad effect on images with fixed pattern noise. At present, it is common to use shutter to prevent from radiation of target and to update the parameters of non-uniformity correction in the infrared imaging system. The use of shutter causes "freezing" image. And inevitably, there exists the problems of the instability and reliability of system, power consumption, and concealment of infrared detection. In this paper, we present an efficient shutter-less non-uniformity correction (NUC) method for infrared focal plane arrays. The infrared imaging system can use the data gaining in thermostat to calculate the incident infrared radiation by shell real-timely. And the primary output of detector except the shell radiation can be corrected by the gain coefficient. This method has been tested in real infrared imaging system, reaching high correction level, reducing fixed pattern noise, adapting wide temperature range.

Infrared thermography on TFR 600 Tokamak

International Nuclear Information System (INIS)

Romain, Roland.

1980-06-01

Infrared thermography with a single InSb detector and with a scanning camera has been performed on the TFR fusion device. High power neutral beam injection diagnostic by means of an infrared periscope is showed to be possible. Surface temperature measurements on the limiter during the discharge have been made in order to evaluate the power deposited by the plasma on this part of the inner wall. Various attempts of infrared detection on the high power neutral injector prototype vessel are described, particularly the measurement of the power deposited on one of the extraction grids of the ion source [fr

Microstructured gradient-index lenses for THz photoconductive antennas

Directory of Open Access Journals (Sweden)

Mads Brincker

2016-02-01

Full Text Available A new type of substrate lens for photoconductive antennas (PCA’s based on sub-wavelength microstructuring is presented and studied theoretically by the use of Greens function integral equation methods (GFIEM’s. By etching sub-wavelength trenches into a flat substrate, the effective dielectric constant can be designed to function like a gradient index (GRIN lens. The proposed GRIN substrate lenses have sub-mm dimension, which is smaller than the dimensions of a typical hyper-hemispherical substrate lens (HSL, and could enable fabrication of arrays of closely packed PCA’s with individual lenses integrated directly into the PCA substrate. The performance of different GRIN lenses is compared to a HSL and shown to be comparable with regards to the terahertz radiation extraction efficiency, and it is shown that the collimating properties of these GRIN lenses can be tailored by changing the parameters used for microstructuring.

Choosing a Motion Detector.

Science.gov (United States)

Ballard, David M.

1990-01-01

Examines the characteristics of three types of motion detectors: Doppler radar, infrared, and ultrasonic wave, and how they are used on school buses to prevent students from being killed by their own school bus. Other safety devices cited are bus crossing arms and a camera monitor system. (MLF)

Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

Energy Technology Data Exchange (ETDEWEB)

Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

2013-07-01

Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

Photoconductivity properties of {delta}-Si doped InGaAs quantum well

Energy Technology Data Exchange (ETDEWEB)

Campo, Junior, V Leira; Marega, Junior, E; Rossi, J C; Lubyshev, D I; Gonzalez Borrero, P P; Basmaji, P [Sao Paulo Univ., Sao Carlos, SP (Brazil). Inst. de Fisica

1996-12-31

Full text. The semiconductors thin films with doping level near Anderson transition have high photo sensitivity in the photo conductivity regime. The maximum sensitivity of these photodetectors occurs under illumination when the system transform from semi-insulating to semi-metal. The ratio between deep and shallow levels concentration in this case should be near the unity with a total impurity concentration near 10{sup 15} cm{sup -3}, that difficult to control at the bulk doping. The frequency response in these devices are limited by absorption thickness ({approx}500-300 nm). In present work we report the results of visible-infrared photo detector (PD) preparation by using molecular beam epitaxy. For development of frequency response and wavelength range increase to infrared area we use {delta}-doped In{sub 0.2} Ga{sub 0.8} As quantum well. The doping level in {delta}-Si layer on the middle of QW was 2 x 10{sup 12} cm{sup -3}, that was enough for shift of deep levels-shallow levels concentration ratio to anderson transition in the area near QW. At the illumination all photoexcited carriers was collected by QW. The deepness of photo sensitivity space area is limiters by few nanometers near the QW, that increase the frequency properties of PD. Photo current spectra show high sensibility ({Delta}) (R/R=15%) at cut-off frequency up 1.25 eV. This explain strong optical absorption by QW in the infrared area. The future work will focalized on introducing {delta}-doped In Ga As superlattice for linearization of PD spectrum characteristics. (author)

Development of (Cd,Zn)Te X-ray and gamma ray radiation detectors for medical and security applications

International Nuclear Information System (INIS)

Franc, J.; Hoeschl, P.; Belas, E.; Grill, V.; Fauler, A.; Dambacher, M.; Procz, S.

2011-01-01

be presented. A complex approach to analyze distribution of defects and defect-related physical properties is as grown crystals based on comparison of various mapping techniques (photoluminescence, photoconductivity, contactless resistivity, mobility-lifetime product, infrared microscopy) will be presented. The obtained maps reflect the combined effect of crystal growth and cooling conditions. Their analysis can serve as information source for simulations of growth process. Special attention will be paid to presence of point, line and volume defects (inclusions and precipitates) generated in as grown and annealed crystals and to their influence to charge collection efficiency. We show in this contribution results of developments of CdTe based sensors for several applications, like an innovative energy resolved X-ray measuring station which was build up for investigations on small animals, low contrast objects and for non-destructive material analysis, where a photon counting semiconductor Medipix detector is being used as X-ray detector. Devices suitable for radiation monitoring will be also presented. (authors)

Real-time imaging systems for superconducting nanowire single-photon detector arrays

Energy Technology Data Exchange (ETDEWEB)

Hofherr, Matthias

2014-07-01

Superconducting nanowire singe-photon detectors (SNSPD) are promising detectors in the field of applications, where single-photon resolution is required like in quantum optics, spectroscopy or astronomy. These cryogenic detectors gain from a broad spectrum in the optical and infrared range and deliver low dark counts and low jitter. This work provides a piece of deeper physical understanding of detector functionality in combination with highly engineered readout development. A detailed analysis focuses on the intrinsic detection mechanism of SNSPDs related to the detection in the infrared regime and the evolution of dark counts. With this fundamental knowledge, the next step is the development of a multi-pixel readout at cryogenic conditions. It is demonstrated, how two auspicious multi-pixel readout concepts can be realized, which enables statistical framing like in imaging applications using RSFQ electronics with fast framing rates and the readout of a detector array with continuous real-time single-photon resolution.

Emerging technologies for high performance infrared detectors

OpenAIRE

Tan Chee Leong; Mohseni Hooman

2018-01-01

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as...

Barriers Keep Drops Of Water Out Of Infrared Gas Sensors

Science.gov (United States)

Murray, Sean K.

1996-01-01

Infrared-sensor cells used for measuring partial pressures of CO(2) and other breathable gases modified to prevent entry of liquid water into sensory optical paths of cells. Hydrophobic membrane prevents drops of water entrained in flow from entering optical path from lamp to infrared detectors.

Effect of pentavalent additions on the optical and photoconductive properties of Bi12TiO20

International Nuclear Information System (INIS)

Egorysheva, A.V.; Volkov, V.V.; Skorikov, V.M.

1995-01-01

Bi 12 TiO 20 (V) and Bi 12 TiO 20 (P) monocrystals were obtained. It is shown that vanadium introduction in the given concentration series proceeds with formation of substitution solid solution. Sharp increase of photoconductivity takes place during doping with low concentrations. Its continuous decrease is observed with successive growth of alloy concentration. 17 refs., 7 figs., 2 tabs

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-01-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ∼8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ∼31.3x10 3 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Photoluminescence and Photoconductivity to Assess Maximum Open-Circuit Voltage and Carrier Transport in Hybrid Perovskites and Other Photovoltaic Materials.

Science.gov (United States)

Braly, Ian L; Stoddard, Ryan J; Rajagopal, Adharsh; Jen, Alex K-Y; Hillhouse, Hugh W

2018-06-06

Photovoltaic (PV) device development is much more expensive and time consuming than the development of the absorber layer alone. This perspective focuses on two methods that can be used to rapidly assess and develop PV absorber materials independent of device development. The absorber material properties of quasi-Fermi level splitting and carrier diffusion length under steady effective one-Sun illumination are indicators of a material's ability to achieve high VOC and JSC. These two material properties can be rapidly and simultaneously assessed with steady-state absolute intensity photoluminescence and photoconductivity measurements. As a result, these methods are extremely useful for predicting the quality and stability of PV materials prior to PV device development. Here, we summarize the methods, discuss their strengths and weaknesses, and compare photoluminescence and photoconductivity results with device performance for four hybrid perovskite compositions of various bandgaps (1.35 to 1.82 eV), CISe, CIGSe, and CZTSe.

Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

Energy Technology Data Exchange (ETDEWEB)

Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

2017-03-15

InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Design and theoretical investigation of a digital x-ray detector with large area and high spatial resolution

Science.gov (United States)

Gui, Jianbao; Guo, Jinchuan; Yang, Qinlao; Liu, Xin; Niu, Hanben

2007-05-01

X-ray phase contrast imaging is a promising new technology today, but the requirements of a digital detector with large area, high spatial resolution and high sensitivity bring forward a large challenge to researchers. This paper is related to the design and theoretical investigation of an x-ray direct conversion digital detector based on mercuric iodide photoconductive layer with the latent charge image readout by photoinduced discharge (PID). Mercuric iodide has been verified having a good imaging performance (high sensitivity, low dark current, low voltage operation and good lag characteristics) compared with the other competitive materials (α-Se,PbI II,CdTe,CdZnTe) and can be easily deposited on large substrates in the manner of polycrystalline. By use of line scanning laser beam and parallel multi-electrode readout make the system have high spatial resolution and fast readout speed suitable for instant general radiography and even rapid sequence radiography.

A diamond detector for inertial confinement fusion X-ray bang-time measurements at the National Ignition Facility

Energy Technology Data Exchange (ETDEWEB)

MacPhee, A G; Brown, C; Burns, S; Celeste, J; Glenzer, S H; Hey, D; Jones, O S; Landen, O; Mackinnon, A J; Meezan, N; Parker, J; Edgell, D; Glebov, V Y; Kilkenny, J; Kimbrough, J

2010-11-09

An instrument has been developed to measure X-ray bang-time for inertial confinement fusion capsules; the time interval between the start of the laser pulse and peak X-ray emission from the fuel core. The instrument comprises chemical vapor deposited polycrystalline diamond photoconductive X-ray detectors with highly ordered pyrolytic graphite X-ray monochromator crystals at the input. Capsule bang-time can be measured in the presence of relatively high thermal and hard X-ray background components due to the selective band pass of the crystals combined with direct and indirect X-ray shielding of the detector elements. A five channel system is being commissioned at the National Ignition Facility at Lawrence Livermore National Laboratory for implosion optimization measurements as part of the National Ignition Campaign. Characteristics of the instrument have been measured demonstrating that X-ray bang-time can be measured with {+-} 30ps precision, characterizing the soft X-ray drive to +/- 1eV or 1.5%.

Subnanosecond, high-voltage photoconductive switching in GaAs

Science.gov (United States)

Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

1991-03-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

Extreme sensitivity of graphene photoconductivity to environmental gases.

Science.gov (United States)

Docherty, Callum J; Lin, Cheng-Te; Joyce, Hannah J; Nicholas, Robin J; Herz, Laura M; Li, Lain-Jong; Johnston, Michael B

2012-01-01

Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices.

Photoconduction spectroscopy of p-type GaSb films

Energy Technology Data Exchange (ETDEWEB)

Shura, M.W., E-mail: Megersa.Shura@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2012-05-15

Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

Photoconduction spectroscopy of p-type GaSb films

International Nuclear Information System (INIS)

Shura, M.W.; Wagener, V.; Botha, J.R.; Wagener, M.C.

2012-01-01

Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 μm. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley–Read–Hall lifetime and maximum value of the surface recombination velocity.

High speed infrared radiation thermometer, system, and method

Science.gov (United States)

Markham, James R.

2002-01-01

The high-speed radiation thermometer has an infrared measurement wavelength band that is matched to the infrared wavelength band of near-blackbody emittance of ceramic components and ceramic thermal barrier coatings used in turbine engines. It is comprised of a long wavelength infrared detector, a signal amplifier, an analog-to-digital converter, an optical system to collect radiation from the target, an optical filter, and an integral reference signal to maintain a calibrated response. A megahertz range electronic data acquisition system is connected to the radiation detector to operate on raw data obtained. Because the thermometer operates optimally at 8 to 12 .mu.m, where emittance is near-blackbody for ceramics, interferences to measurements performed in turbine engines are minimized. The method and apparatus are optimized to enable mapping of surface temperatures on fast moving ceramic elements, and the thermometer can provide microsecond response, with inherent self-diagnostic and calibration-correction features.

Biological infrared microspectroscopy at the National Synchrotron Light Source

International Nuclear Information System (INIS)

Miller, Lisa M.; Carr, G. Lawrence; Williams, Gwyn P.; Sullivan, Michael; Chance, Mark R.

2000-01-01

Beamline U2B at the National Synchrotron Light Source has been designed and built as an infrared beamline dedicated to the study of biomedical problems. In 1997, the horizontal and vertical acceptances of Beamline U2B were increased in order to increase the overall flux of the beamline. A wedged, CVD diamond window separates the UHV vacuum of the VUV ring from the rough vacuum of the beamline. The endstation consists of a Nicolet Magna 860 step-scan FTIR and a NicPlan infrared microscope. The spectrometer is equipped with beamsplitter/detector combinations that permit data collection in the mid-and far-infrared regions. We have also made provisions for mounting an external detector (e.g. bolometer) for far infrared microspectroscopy. Thus far, Beamline U2B has been used to (1) perform chemical imaging of bone tissue and brain cells to address issues related to bone disease and epilepsy, respectively, and (2) examine time-resolved protein structure in the sub-millisecond folding of cytochrome c

Lead salt resonant cavity enhanced detector with MEMS mirror

Science.gov (United States)

Felder, F.; Fill, M.; Rahim, M.; Zogg, H.; Quack, N.; Blunier, S.; Dual, J.

2010-01-01

We describe a tunable resonant cavity enhanced detector (RCED) for the mid-infrared employing narrow gap lead-chalcogenide (IV-VI) layers on a Si substrate. The device consists of an epitaxial Bragg reflector layer, a thin p-n+ heterojunction with PbSrTe as detecting layer and a micro-electro-mechanical system (MEMS) micromirror as second mirror. Despite the thin absorber layer the sensitivity is even higher than for a conventional detector. Tunability is achieved by changing the cavity length with a vertically movable MEMS mirror. The device may be used as miniature infrared spectrometer to cover the spectral range from 30 μm.

Ensuring long-term stability of infrared camera absolute calibration.

Science.gov (United States)

Kattnig, Alain; Thetas, Sophie; Primot, Jérôme

2015-07-13

Absolute calibration of cryogenic 3-5 µm and 8-10 µm infrared cameras is notoriously instable and thus has to be repeated before actual measurements. Moreover, the signal to noise ratio of the imagery is lowered, decreasing its quality. These performances degradations strongly lessen the suitability of Infrared Imaging. These defaults are often blamed on detectors reaching a different "response state" after each return to cryogenic conditions, while accounting for the detrimental effects of imperfect stray light management. We show here that detectors are not to be blamed and that the culprit can also dwell in proximity electronics. We identify an unexpected source of instability in the initial voltage of the integrating capacity of detectors. Then we show that this parameter can be easily measured and taken into account. This way we demonstrate that a one month old calibration of a 3-5 µm camera has retained its validity.

Spectral Irradiance Measurements Based on Detector

International Nuclear Information System (INIS)

Lima, M S; Menegotto, T; Duarte, I; Da Silva, T Ferreira; Alves, L C; Alvarenga, A D; Almeida, G B; Couceiro, I B; Teixeira, R N

2015-01-01

This paper presents the preliminary results of the realization of absolute spectral irradiance scale at INMETRO in the ultraviolet, visible and infrared regions using filter radiometers as secondary standards. In the construction of these instruments are used, at least, apertures, interference filters and a trap detector. In the assembly of the trap detectors it was necessary to characterize several photocells in spatial uniformity and shunt resistance. All components were calibrated and these results were analyzed to mount the filter radiometer

Thin film encapsulated 1D thermoelectric detector in an IR microspectrometer

NARCIS (Netherlands)

Wu, H.; Emadi, A.; De Graaf, G.; Wolffenbuttel, R.F.

2010-01-01

A thermopile-based detector array for use in a miniaturized Infrared (IR) spectrometer has been designed and fabricated using CMOS compatible MEMS technology. The emphasis is on the optimal of the detector array at the system level, while considering the thermal design, the dimensional constraints

Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors

International Nuclear Information System (INIS)

Wu Jihhuah; Chang Rongsen; Horng Gwoji

2004-01-01

The effects of the microstructure and the electrical and optical properties on the formation at highly efficient infrared PtSi Schottky barrier detectors (SBD) have been studied in detail. Two- to twelve-nanometer-thick PtSi films were grown by evaporation at temperature ranging from 350 to 550 deg. C. The electron diffraction patterns indicate the existence of both the (11-bar0) and (12-bar1) orientations when PtSi films formed at 350 deg. C. However, the diffraction patterns show only the (12-bar1) orientation when the PtSi films are formed at 450 deg. C or above. The electrical barrier height of the Schottky barrier detector that formed at 350 deg. C was about 20 meV higher than that formed at 450 deg. C or above. The grain size and the film thickness had a negligible effect on the electrical barrier height. However, the optical performance was strongly dependent on the film thickness and the growth conditions. The 350 deg. C PtSi film showed increased quantum efficiency as the film thickness decreased. The optimal thickness that provided the highest responsivity was 2 nm. On the other hand, the optimal thickness shifted to 8 nm for PtSi film formed at 450 deg. C or above. These results indicate that the quantum efficiency of a detector can be improved if the PtSi film has an orientation at (12-bar1), a larger grain size, and an optimal film thickness

NanoComposite Polymers for High Resolution Near Infrared Detectors

Data.gov (United States)

National Aeronautics and Space Administration — Develop nanocomposite materials with tuned refractive index in the near infra red spectral range as an index-matched immersion lens for high resolution infra-red...

Applications of infrared technology; Proceedings of the Meeting, London, England, June 9, 10, 1988

International Nuclear Information System (INIS)

Williams, T.L.

1988-01-01

Recent developments in thermal imaging and other infrared systems relating to military, industrial, medical, and scientific applications are reviewed. Papers are presented on a new thermal imager using a linear pyroelectric detector array; multichannel near infrared spectroradiometer; technological constraints on the use of thermal imagery for remote sensing; and infrared optical system of the improved stratospheric and mesospheric sounder. Other topics discussed include infrared thermography development for composite material evaluation; infrared process linescanner, and optical infrared starting radiometer

Determination of the energy gap in photoconducting insulators through current noise measurements

International Nuclear Information System (INIS)

Carbone, A.; Demichelis, F.; Mazzetti, P.

1989-01-01

Measurements of the current noise power spectrum of the photoconducting insulators CdS and CdSe irradiated with monochromatic light of different wavelength λ are reported. It is shown that there is an abrupt change of about one order of magnitude in the low frequency power density of the noise when λ crosses the photoconductor gap value λ and the photocurrent and the device conductance are kept constant by varying the light intensity. The effect is explained in terms of an abrupt increase of the carrier recombination rate when the photon energy becomes larger than the energy gap of the photoconductor. Possible applications of these results are briefly discussed

Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

International Nuclear Information System (INIS)

Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

2016-01-01

A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

International Nuclear Information System (INIS)

Guang-Hua, Tang; Bo, Xu; Li-Wen, Jiang; Jin-Xia, Kong; Ning, Kong; De-Chun, Liang; Ping, Liang; Xiao-Ling, Ye; Peng, Jin; Feng-Qi, Liu; Yong-Hai, Chen; Zhan-Guo, Wang

2010-01-01

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2–7 μm has been obtained with peaks at 3.1, 4.8 and 5.7 μm. The bandgap energies of GaAs and Alo.2Gao.sAs at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure

Subnanosecond, high voltage photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

1990-01-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

Supramolecular core-shell nanoparticles for photoconductive device applications

Science.gov (United States)

Cheng, Chih-Chia; Chen, Jem-Kun; Shieh, Yeong-Tarng; Lee, Duu-Jong

2016-08-01

We report a breakthrough discovery involving supramolecular-based strategies to construct novel core-shell heterojunction nanoparticles with hydrophilic adenine-functionalized polythiophene (PAT) as the core and hydrophobic phenyl-C61-butyric acid methyl ester (PCBM) as the shell, which enables the conception of new functional supramolecular assemblies for constructing functional nanomaterials for applications in optoelectronic devices. The generated nanoparticles exhibit uniform spherical shape, well-controlled tuning of particle size with narrow size distributions, and excellent electrochemical stability in solution and the solid state owing to highly efficient energy transfer from PAT to PCBM. When the PAT/PCBM nanoparticles were fabricated into a photoconducting layer in an electronic device, the resulting device showed excellent electric conduction characteristics, including an electrically-tunable voltage-controlled switch, and high short-circuit current and open-circuit voltage. These observations demonstrate how the self-assembly of PAT/PCBM into specific nanostructures may help to promote efficient charge generation and transport processes, suggesting potential for a wide variety of applications as a promising candidate material for bulk heterojunction polymer devices.

Measurement of optical-beat frequency in a photoconductive terahertz-wave generator using microwave higher harmonics.

Science.gov (United States)

Murasawa, Kengo; Sato, Koki; Hidaka, Takehiko

2011-05-01

A new method for measuring optical-beat frequencies in the terahertz (THz) region using microwave higher harmonics is presented. A microwave signal was applied to the antenna gap of a photoconductive (PC) device emitting a continuous electromagnetic wave at about 1 THz by the photomixing technique. The microwave higher harmonics with THz frequencies are generated in the PC device owing to the nonlinearity of the biased photoconductance, which is briefly described in this article. Thirteen nearly periodic peaks in the photocurrent were observed when the microwave was swept from 16 to 20 GHz at a power of -48 dBm. The nearly periodic peaks are generated by the homodyne detection of the optical beat with the microwave higher harmonics when the frequency of the harmonics coincides with the optical-beat frequency. Each peak frequency and its peak width were determined by fitting a Gaussian function, and the order of microwave harmonics was determined using a coarse (i.e., lower resolution) measurement of the optical-beat frequency. By applying the Kalman algorithm to the peak frequencies of the higher harmonics and their standard deviations, the optical-beat frequency near 1 THz was estimated to be 1029.81 GHz with the standard deviation of 0.82 GHz. The proposed method is applicable to a conventional THz-wave generator with a photomixer.

Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

International Nuclear Information System (INIS)

Chen, R. S.; Tsai, H. Y.; Huang, Y. S.; Chen, Y. T.; Chen, L. C.; Chen, K. H.

2012-01-01

The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height (φ B = 160 ± 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 ± 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Science.gov (United States)

Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Reynolds, S.; Rafailov, E. U.

2012-08-01

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency ˜1 THz.

Multichannel far-infrared phase imaging for fusion plasmas

International Nuclear Information System (INIS)

Young, P.E.; Neikirk, D.P.; Tong, P.P.; Rutledge, D.B.; Luhmann, N.C. Jr.

1985-01-01

A 20-channel far-infrared imaging interferometer system has been used to obtain single-shot density profiles in the UCLA Microtor tokamak. This system differs from conventional multichannel interferometers in that the phase distribution produced by the plasma is imaged onto a single, monolithic, integrated microbolometer linear detector array and provides significantly more channels than previous far-infrared interferometers. The system has been demonstrated to provide diffraction-limited phase images of dielectric targets

Characterisation of an inhomogeneously irradiated microstrip detector using a fine spot infrared laser

CERN Document Server

Casse, G; Bowcock, T J V; Greenall, A; Phillips, JP; Turner, PR; Wright, V

2001-01-01

A prototype silicon microstrip detector for the LHCb vertex locator (VELO) has been partially irradiated using a 24 GeV/c proton beam at the CERN-PS accelerator. The detector possesses a radial strip geometry designed to measure the azimuthal coordinate (Phi) of tracks within the VELO. The peak fluence received by the detector was measured to be 4.6×10 14 p/cm 2 though the non-uniform nature of the exposure left part of the detector unirradiated. The inhomogeneous irradiation introduced a damage profile in the detector approximating to that expected in the VELO. High irradiation gradients are important to study as they can modify the electric field within the silicon. Of special interest are changes in the component of the electric field parallel to the strip plane but perpendicular to the strips which lead to systematic shifts in the reconstructed cluster position. If these (flux and position dependent) shifts are sufficiently large they could contribute to a degraded spatial resolution of the detector. In ...

Infrared profile of Milky Way at 2.4 μm

International Nuclear Information System (INIS)

Hayakawa, S.; Ito, K.; Matsumoto, T.; Ono, T.; Uyama, K.

1976-01-01

A balloon observation was made of infrared radiation from the Milky Way at wavelength 2.4 μm, with a band width of 0.1 μm, avoiding intense OH airglow. The telescope employed is described. The optical system was cooled by liquid N 2 to reduce the background thermal radiation and improve the detector sensitivity. An array of three PbS detectors was employed. An isophoto of the infrared surface brightness is shown. It appeared that some infrared sources are associated with objects in the spiral arms, but a considerable fraction of these sources is distributed over the galaxy in a similar manner to normal stars. An analysis of the results suggests that the infrared radiation observed at 2.4 μm is emitted mainly from the region inside the solar circle. A comparison was made with the intensity of 100 MeV γ-rays, produced by collisions of cosmic rays with interstellar matter. The longitude dependences observed for the 2.4 μm radiation, the 2.6 mm CO line, HII regions, the 21 cm H line, and the 100 MeV γ-rays correlated with one another. It is concluded that infrared emission provides a further means of investigating galactic structure. (U.K.)

Development and Production of Array Barrier Detectors at SCD

Science.gov (United States)

Klipstein, P. C.; Avnon, E.; Benny, Y.; Berkowicz, E.; Cohen, Y.; Dobromislin, R.; Fraenkel, R.; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Y.; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, N.; Rosenberg, O.; Shtrichman, I.; Shkedy, L.; Snapi, N.; Talmor, R.; Tessler, R.; Weiss, E.; Tuito, A.

2017-09-01

XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced "HOT Pelican D", a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ˜150 K. Its low power (˜3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, "HOT Hercules" was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ("HOT Blackbird") is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch "Pelican-D LW" XB p type II superlattice (T2SL) detector has a ˜9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ˜50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7.

Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells

Energy Technology Data Exchange (ETDEWEB)

Novikov, G. F., E-mail: ngf@icp.ac.ru [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation); Tsai, Wei-Tao [Chang Gung University, Department of Electronic Engineering (China); Bocharov, K. V.; Rabenok, E. V. [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation); Jeng, Ming-Jer; Chang, Liann-Be [Chang Gung University, Department of Electronic Engineering (China); Feng, Wu-Shiung [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation); Ao, Jian-Ping; Sun, Yun [Nankai University, Institute of Photoelectronic Thin Film Device and Technology (China)

2016-10-15

The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.

A polychromator-type near-infrared spectrometer with a high-sensitivity and high-resolution photodiode array detector for pharmaceutical process monitoring on the millisecond time scale.

Science.gov (United States)

Murayama, Kodai; Genkawa, Takuma; Ishikawa, Daitaro; Komiyama, Makoto; Ozaki, Yukihiro

2013-02-01

In the fine chemicals industry, particularly in the pharmaceutical industry, advanced sensing technologies have recently begun being incorporated into the process line in order to improve safety and quality in accordance with process analytical technology. For estimating the quality of powders without preparation during drug formulation, near-infrared (NIR) spectroscopy has been considered the most promising sensing approach. In this study, we have developed a compact polychromator-type NIR spectrometer equipped with a photodiode (PD) array detector. This detector is consisting of 640 InGaAs-PD elements with 20-μm pitch. Some high-specification spectrometers, which use InGaAs-PD with 512 elements, have a wavelength resolution of about 1.56 nm when covering 900-1700 nm range. On the other hand, the newly developed detector, having the PD with one of the world's highest density, enables wavelength resolution of below 1.25 nm. Moreover, thanks to the combination with a highly integrated charge amplifier array circuit, measurement speed of the detector is higher by two orders than that of existing PD array detectors. The developed spectrometer is small (120 mm × 220 mm × 200 mm) and light (6 kg), and it contains various key devices including the high-density and high-sensitivity PD array detector, NIR technology, and spectroscopy technology for a spectroscopic analyzer that has the required detection mechanism and high sensitivity for powder measurement, as well as a high-speed measuring function for blenders. Moreover, we have evaluated the characteristics of the developed NIR spectrometer, and the measurement of powder samples confirmed that it has high functionality.

A polychromator-type near-infrared spectrometer with a high-sensitivity and high-resolution photodiode array detector for pharmaceutical process monitoring on the millisecond time scale

Science.gov (United States)

Murayama, Kodai; Genkawa, Takuma; Ishikawa, Daitaro; Komiyama, Makoto; Ozaki, Yukihiro

2013-02-01

In the fine chemicals industry, particularly in the pharmaceutical industry, advanced sensing technologies have recently begun being incorporated into the process line in order to improve safety and quality in accordance with process analytical technology. For estimating the quality of powders without preparation during drug formulation, near-infrared (NIR) spectroscopy has been considered the most promising sensing approach. In this study, we have developed a compact polychromator-type NIR spectrometer equipped with a photodiode (PD) array detector. This detector is consisting of 640 InGaAs-PD elements with 20-μm pitch. Some high-specification spectrometers, which use InGaAs-PD with 512 elements, have a wavelength resolution of about 1.56 nm when covering 900-1700 nm range. On the other hand, the newly developed detector, having the PD with one of the world's highest density, enables wavelength resolution of below 1.25 nm. Moreover, thanks to the combination with a highly integrated charge amplifier array circuit, measurement speed of the detector is higher by two orders than that of existing PD array detectors. The developed spectrometer is small (120 mm × 220 mm × 200 mm) and light (6 kg), and it contains various key devices including the high-density and high-sensitivity PD array detector, NIR technology, and spectroscopy technology for a spectroscopic analyzer that has the required detection mechanism and high sensitivity for powder measurement, as well as a high-speed measuring function for blenders. Moreover, we have evaluated the characteristics of the developed NIR spectrometer, and the measurement of powder samples confirmed that it has high functionality.

A DBN based anomaly targets detector for HSI

Science.gov (United States)

Ma, Ning; Wang, Shaojun; Yu, Jinxiang; Peng, Yu

2017-10-01

Due to the assumption that Hyperspectral image (HSI) should conform to Gaussian distribution, traditional Mahalanobis distance-based anomaly targets detectors perform poor because the assumption may not always hold. In order to solve those problems, a deep learning based detector, Deep Belief Network(DBN) anomaly detector(DBN-AD), was proposed to fit the unknown distribution of HSI by energy modeling, the reconstruction errors of this encode-decode processing are used for discriminating the anomaly targets. Experiments are implemented on real and synthesized HSI dataset which collection by Airborne Visible Infra-Red Imaging Spectrometer (AVIRIS). Comparing to classic anomaly detector, the proposed method shows better performance, it performs about 0.17 higher in Area Under ROC Curve (AUC) than that of Reed-Xiaoli detector(RXD) and Kernel-RXD (K-RXD).

New developments in photoconductive detectors (invited)

International Nuclear Information System (INIS)

Han, S.

1997-01-01

Nearly ideal for detecting ionizing radiation, wide band-gap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection, and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide band-gap semiconductors have progressed enormously. One particular wide band-gap semiconductor, diamond, has properties that may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films has become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diam is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond close-quote s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide band-gap semiconductors for ICF diagnostics will be presented. copyright 1997 American Institute of Physics

Science with low temperature detectors

International Nuclear Information System (INIS)

Sadoulet, B.; Lawrence Berkeley National Lab., CA; California Univ., Berkeley

1996-01-01

The novel technique of particle detection with low temperature detectors opens a number of new scientific opportunities. We review some of these, focusing on three generic applications: far infrared bolometry taking as an example the cosmic microwave background, X-ray spectroscopy for astrophysics and biological applications, and massive calorimeters for dark matter searches and neutrino physics. (orig.)

Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides

Science.gov (United States)

Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.

2010-09-01

Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and gas spectroscopy. One way to realize such tunable devices is by using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolour IR-FPA or "IR-AFPA", adaptive focal plane arrays. We report the first room temperature mid-IR VECSEL (vertical external cavity surface emitting laser) with a wavelength above 3 μm. The active region is just 850 nm PbSe, followed by a 2.5 pair Bragg mirror. Output power is > 10 mW at RT.

Apparatus and method for transient thermal infrared spectrometry

Science.gov (United States)

McClelland, John F.; Jones, Roger W.

1991-12-03

A method and apparatus for enabling analysis of a material (16, 42) by applying a cooling medium (20, 54) to cool a thin surface layer portion of the material and to transiently generate a temperature differential between the thin surface layer portion and the lower portion of the material sufficient to alter the thermal infrared emission spectrum of the material from the black-body thermal infrared emission spectrum of the material. The altered thermal infrared emission spectrum of the material is detected by a spectrometer/detector (28, 50) while the altered thermal infrared emission spectrum is sufficiently free of self-absorption by the material of the emitted infrared radiation. The detection is effected prior to the temperature differential propagating into the lower portion of the material to an extent such that the altered thermal infrared emission spectrum is no longer sufficiently free of self-absorption by the material of emitted infrared radiation, so that the detected altered thermal infrared emission spectrum is indicative of the characteristics relating to the molecular composition of the material.

Correlation between photoconductivity in nanocrystalline titania and short circuit current transients in MEH-PPV/titania solar cells

International Nuclear Information System (INIS)

Xie, Z B; Henry, B M; Kirov, K R; Barkhouse, D A R; Burlakov, V M; Smith, H E; Grovenor, C R M; Assender, H E; Briggs, G A D; Kano, M; Tsukahara, Y

2007-01-01

We report the first experimental observation of a direct relationship between electron transport in different nanocrystalline TiO 2 thin films and the photovoltaic performance of TiO 2 /MEH-PPV composite solar cells made using these same TiO 2 films. We show that the transient behaviour in the composite solar cells under illumination can be explained by the transient photoconductivity performance of the TiO 2 layer

Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

Science.gov (United States)

Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

2017-11-01

The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

Accurate and independent spectral response scale based on silicon trap detectors and spectrally invariant detectors

International Nuclear Information System (INIS)

Gran, Jarle

2005-01-01

The study aims to establish an independent high accuracy spectral response scale over a broad spectral range based on standard laboratory equipment at a moderate cost. This had to be done by a primary method, where the responsivity of the detector is linked to fundamental constants. Summary, conclusion and future directions: In this thesis it has been demonstrated that an independent spectral response scale from the visual to the IR based on simple relative measurements can be established. The accuracy obtained by the hybrid self-calibration method demonstrates that state of the art accuracy is obtained with self-calibration principles. A calculable silicon trap detector with low internal losses over a wide spectral range is needed to establish the scale, in addition to a linear, spectrally independent detector with a good signal to noise ratio. By fitting the parameters in the responsivity model to a purely relative measurement we express the spectral response in terms of fundamental constants with a known uncertainty This is therefore a primary method. By applying a digital filter on the relative measurements of the InGaAs detectors in the infrared reduces the standard deviation by 30 %. In addition, by optimising the necessary scaling constant converting the relative calibration to absolute values, we have managed to establish an accurate and cost efficient spectral response scale in the IR. The full covariance analysis, which takes into account the correlation in the absolute values of the silicon detector, the correlation caused by the filter and the scaling constant, shows that the spectral response scale established in the infrared with InGaAs detectors is done with high accuracy. A similar procedure can be used in the UV, though it has not been demonstrated here. In fig. 10 the responsitivities of the detectors (a) and their associated uncertainties (b) at the 1 sigma level of confidence is compared for the three publications. We see that the responsivity

Quantum Well Infrared Photodetectors: Device Physics and Light Coupling

Science.gov (United States)

Bandara, S. V.; Gunapala, S. D.; Liu, J. K.; Mumolo, J.; Luong, E.; Hong, W.; Sengupta, D. K.

1997-01-01

It is customary to make infrared (IR) detectors in the long wavelength range by utilizing the interband transition which promotes an electron across the band gap (Eg) from the valence band to the conduction.

Generation of pulsed far-infrared radiation and its application for far-infrared time-resolved spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kondo, Yasuhiro [Tohoku Univ., Sendai (Japan). Faculty of Engineering

1996-07-01

So-called time-resolved spectroscopy technique has been used from old time as the means for studying the dynamic optical property, light-induced reaction and so on of matters. As an example, there is the method called pump and probe, and here, the wavelength of this probe light is the problem. If the object energy region is limited to about 0.1 eV, fast time-resolved spectroscopy is feasible relatively easily. However, energy region is extended to low energy region, the light source which is available as the pulsed probe light having sufficient intensity is limited. In this paper, the attempt of time-resolved spectroscopy utilizing coherent radiation, which has ended in failure, and the laser pulse-induced far-infrared radiation which can be utilized as new far-infrared probe light are reported. The reason why far-infrared radiation is used is explained. The attempt of time-resolved spectroscopy using NaCl crystals is reported on the equipment, the method of measuring absorption spectra and the results. Laser pulse-induced far-infrared radiation and the method of generating it are described. The multi-channel detector for far-infrared radiation which was made for trial is shown. (K.I.)

Reliability studies of high operating temperature MCT photoconductor detectors

Science.gov (United States)

Wang, Wei; Xu, Jintong; Zhang, Yan; Li, Xiangyang

2010-10-01

This paper concerns HgCdTe (MCT) infrared photoconductor detectors with high operating temperature. The near room temperature operation of detectors have advantages of light weight, less cost and convenient usage. Their performances are modest and they suffer from reliable problems. These detectors face with stability of the package, chip bonding area and passivation layers. It's important to evaluate and improve the reliability of such detectors. Defective detectors were studied with SEM(Scanning electron microscope) and microscopy. Statistically significant differences were observed between the influence of operating temperature and the influence of humidity. It was also found that humility has statistically significant influence upon the stability of the chip bonding and passivation layers, and the amount of humility isn't strongly correlated to the damage on the surface. Considering about the commonly found failures modes in detectors, special test structures were designed to improve the reliability of detectors. An accelerated life test was also implemented to estimate the lifetime of the high operating temperature MCT photoconductor detectors.

Spectral classification by the near infrared photometric parameters

International Nuclear Information System (INIS)

Tignanelli, H.L.; Feinstein, A.

1985-01-01

From the analysis of the measurements of KM-type stars done in the near infrared (1 to 3.5 microns: the JHKL bands of Johnsons's system), with an 83 cm reflector and a PbS detector at La Plata Observatory, we try to establish a new photometric classification system that discriminates luminosity class by means of certain parameters defined by infrared colours and infrared magnitudes. Data compiled and homogenized by J.Koornneef of southern bright stars in those bands were also included. The results give us information about the spectral types and reddening of those stars. We also indicate how to calculate the radiation excess that those stars could have. (author)

Near Infrared Spectroscopy Systems for Tissue Oximetry

DEFF Research Database (Denmark)

Petersen, Søren Dahl

for other medical applications. The tissue oximeters are realised by incorporation of pn-diodes into the silicon in order to form arrays of infrared detectors. These arrays can then be used for spatially resolved spectroscopy measurements, with the targeted end user being prematurely born infant children...

Temperature effects on radiation damage in plastic detectors

International Nuclear Information System (INIS)

Mendoza A, D.

1996-01-01

The objective of present work was to study the temperature effect on radiation damage registration in the structure of a Solid State Nuclear Track Detector of the type CR-39. In order to study the radiation damage as a function of irradiation temperature, sheets of CR-39 detectors were irradiated with electron beams, simulating the interaction of positive ions. CR-39 detectors were maintained at a constant temperature from room temperature up to 373 K during irradiation. Two techniques were used from analyzing changes in the detector structure: Electronic Paramagnetic Resonance (EPR) and Infrared Spectroscopy (IR). It was found by EPR analysis that the amount of free radicals decrease as irradiation temperature increases. The IR spectrums show yield of new functional group identified as an hydroxyl group (OH). A proposed model of interaction of radiation with CR-39 detectors is discussed. (Author)

Ultrafast stimulated Raman spectroscopy in the near-infrared region

International Nuclear Information System (INIS)

Takaya, Tomohisa

2016-01-01

A number of electronic transitions in the near-infrared wavelength region are associated with migration or delocalization of electrons in large molecules or molecular systems. Time-resolved near-infrared Raman spectroscopy will be a powerful tool for investigating the structural dynamic of samples with delocalized electrons. However, the sensitivity of near-infrared spontaneous Raman spectrometers is significantly low due to an extremely small probability of Raman scattering and a low sensitivity of near-infrared detectors. Nonlinear Raman spectroscopy is one of the techniques that can overcome the sensitivity problems and enable us to obtain time-resolved Raman spectra in resonance with near-IR transitions. In this article, the author introduces recent progress of ultrafast time-resolved near-infrared stimulated Raman spectroscopy. Optical setup, spectral and temporal resolution, and applications of the spectrometer are described. (author)

A Novel Infrared Gas Monitor

Science.gov (United States)

Wang, Yingding; Zhong, Hongjie

2000-03-01

In the paper a novel non-dispersive infrared(IR) gas monitor is described.It is based on the principle that certain gases absorb IR radiation at specific(and often unique) wavelengths.Conventional devices typically include several primary components:a broadband source, usually an incandescent filament,a rotating chopper shutter,a narrow-band filter,a sample tube and a detector. We have developed a number of IR light emitting diodes(LED) having narrow optical bandwidths and which can be intensity modulated by electrical means,for example InAsSbP(4.2 micron)LED.The IR LED can thus replace the thermal source,narrow-band filter and chopper assembly of the conventional IR gas monitor,yielding a solid state,low- powered,compact and almost maintenance-free instrument with high sensitivity and stability and which free of the effects of mechanical vibration too. The detector used in the IR gas monitor is the solid-state detector,such as PbS,PbSe, InSb,HgCdTe,TGS,LT and PZT detector etc. The different configuration of the IR gas monitor is designed.For example,two-path version for measuring methane concentration by monitoring the 3.31 micron absorption band,it can eliminate the interference effects,such as to compensate for LED intensity changes caused by power and temperature variations,and for signal fluctuations due to changes in detector bias. we also have designed portable single-beam version without the sample tube.Its most primary advantage is very cheap(about cost USD 30 ).It measures carbon dioxide concentration by monitoring the 4.25 micron absorption band.Thought its precisions is low,it is used to control carbon dioxide concentration in the air in the green houses and plastic houses(there are about twenty millon one in the China).Because more carbon dioxide will increase the quanity of vegetable and flower production to a greatextent. It also is used in medical,sanitary and antiepidemic applications,such as hospital, store,hotel,cabin and ballroom etc. Key words:infrared

Research on cloud background infrared radiation simulation based on fractal and statistical data

Science.gov (United States)

Liu, Xingrun; Xu, Qingshan; Li, Xia; Wu, Kaifeng; Dong, Yanbing

2018-02-01

Cloud is an important natural phenomenon, and its radiation causes serious interference to infrared detector. Based on fractal and statistical data, a method is proposed to realize cloud background simulation, and cloud infrared radiation data field is assigned using satellite radiation data of cloud. A cloud infrared radiation simulation model is established using matlab, and it can generate cloud background infrared images for different cloud types (low cloud, middle cloud, and high cloud) in different months, bands and sensor zenith angles.

Life-finding detector development at NASA GSFC using a custom H4RG test bed

Science.gov (United States)

Mosby, Gregory; Rauscher, Bernard; Kutyrev, Alexander

2018-01-01

Chemical species associated with life, called biosignatures, should be visible in exoplanet atmospheres with larger space telescopes. These signals will be faint and require very low noise (~e-) detectors to robustly measure. At NASA Goddard we are developing a single detector H4RG test bed to characterize and identify potential technology developments needed for the next generation's large space telescopes. The vacuum and cryogenic test bed will include near infrared light sources from integrating spheres using a motorized shutter. The detector control and readout will be handled by a Leach controller. Detector cables have been manufactured and test planning has begun. Planned tests include testing minimum read noise capabilities, persistence mitigation strategies using long wavelength light, and measuring intrapixel variation which might affect science goals of future missions. In addition to providing a means to identify areas of improvement in detector technology, we hope to use this test bed to probe some fundamental physics of these infrared arrays.

Large-format 17μm high-end VOx μ-bolometer infrared detector

Science.gov (United States)

Mizrahi, U.; Argaman, N.; Elkind, S.; Giladi, A.; Hirsh, Y.; Labilov, M.; Pivnik, I.; Shiloah, N.; Singer, M.; Tuito, A.; Ben-Ezra, M.; Shtrichman, I.

2013-06-01

Long range sights and targeting systems require a combination of high spatial resolution, low temporal NETD, and wide field of view. For practical electro-optical systems it is hard to support these constraints simultaneously. Moreover, achieving these needs with the relatively low-cost Uncooled μ-Bolometer technology is a major challenge in the design and implementation of both the bolometer pixel and the Readout Integrated Circuit (ROIC). In this work we present measured results from a new, large format (1024×768) detector array, with 17μm pitch. This detector meets the demands of a typical armored vehicle sight with its high resolution and large format, together with low NETD of better than 35mK (at F/1, 30Hz). We estimate a Recognition Range for a NATO target of better than 4 km at all relevant atmospheric conditions, which is better than standard 2nd generation scanning array cooled detector. A new design of the detector package enables improved stability of the Non-Uniformity Correction (NUC) to environmental temperature drifts.

Fast sub-electron detectors review for interferometry

Science.gov (United States)

Feautrier, Philippe; Gach, Jean-Luc; Bério, Philippe

2016-08-01

New disruptive technologies are now emerging for detectors dedicated to interferometry. The detectors needed for this kind of applications need antonymic characteristics: the detector noise must be very low, especially when the signal is dispersed but at the same time must also sample the fast temporal characteristics of the signal. This paper describes the new fast low noise technologies that have been recently developed for interferometry and adaptive optics. The first technology is the Avalanche PhotoDiode (APD) infrared arrays made of HgCdTe. In this paper are presented the two programs that have been developed in that field: the Selex Saphira 320x256 [1] and the 320x255 RAPID detectors developed by Sofradir/CEA LETI in France [2], [3], [4]. Status of these two programs and future developments are presented. Sub-electron noise can now be achieved in the infrared using this technology. The exceptional characteristics of HgCdTe APDs are due to a nearly exclusive impaction ionization of the electrons, and this is why these devices have been called "electrons avalanche photodiodes" or e-APDs. These characteristics have inspired a large effort in developing focal plan arrays using HgCdTe APDs for low photon number applications such as active imaging in gated mode (2D) and/or with direct time of flight detection (3D imaging) and, more recently, passive imaging for infrared wave front correction and fringe tracking in astronomical observations. In addition, a commercial camera solution called C-RED, based on Selex Saphira and commercialized by First Light Imaging [5], is presented here. Some groups are also working with instruments in the visible. In that case, another disruptive technology is showing outstanding performances: the Electron Multiplying CCDs (EMCCD) developed mainly by e2v technologies in UK. The OCAM2 camera, commercialized by First Light Imaging [5], uses the 240x240 EMMCD from e2v and is successfully implemented on the VEGA instrument on the CHARA

New Generation of Superconducting Nanowire Single-Photon Detectors

Directory of Open Access Journals (Sweden)

Goltsman G.N.

2015-01-01

Full Text Available We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.

Influence of gamma radiation and impurity atoms on the photoconductivity of GeS single crystals

International Nuclear Information System (INIS)

Madatov, R.S.; Alekperov, A.S.

2013-01-01

Wide opportunities for using of layered semiconductors, particularly in optoelectronics have generated considerable interest to them. Recently it was created the unique device from GeS for the storage of solar energy. The investigated GeS 1 -xNd x S single crystals were grown by the Bridgman method. The samples were irradiated by gamma-quanta and was conducted to install 60Co at room temperature. Irradiation of p-GeS 1 -xNd x S single crystals by small doses of gamma rays increases the photoconductivity on 40%

Subnanosecond linear GaAs photoconductive switching, revision 1

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Hofer, W. W.

Research was conducted in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 to 50kV range. The very fast recombination rates of Gallium Arsenide (GaAs) was exploited to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is (approx. 10(-14) sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. Switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm was observed. The illumination source was a Nd:YAG laser operating at 1.06 microns.

Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Olsen, Christopher Sean [Univ. of California, Berkeley, CA (United States)

1998-05-01

This research has shown that epilayers with residual impurity concentrations of 5 x 10¹³ cm^-3 can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long as pure enough solvents are available. The detectors have responded at proper wavelengths when reversed biased even though the response did not quite reach minimum wavenumbers. Optimization of the Sb doping concentration should further decrease the photoionization energy of these detectors. Ge BIB detectors have been fabricated that respond to 60 cm^-1 with low responsivity. Through reduction of the minority residual impurities, detector performance has reached responsivities of 1 A/W. These detectors have exhibited quantum efficiency and NEP values that rival conventional photoconductors and are expected to provide a much more sensitive tool for new scientific discoveries in a number of fields, including solid state studies, astronomy, and cosmology.

Development of the infrared instrument for gas detection

Science.gov (United States)

Chen, Ching-Wei; Chen, Chia-Ray

2017-08-01

MWIR (Mid-Wave Infrared) spectroscopy shows a large potential in the current IR devices market, due to its multiple applications, such as gas detection, chemical analysis, industrial monitoring, combustion and flame characterization. It opens this technique to the fields of application, such as industrial monitoring and control, agriculture and environmental monitoring. However, a major barrier, which is the lack of affordable specific key elements such a MWIR light sources and low cost uncooled detectors, have held it back from its widespread use. In this paper an uncooled MWIR detector combined with image enhancement technique is reported. This investigation shows good results in gas leakage detection test. It also verify the functions of self-developed MWIR lens and optics. A good agreement in theoretical design and experiment give us the lessons learned for the potential application in infrared satellite technology. A brief discussions will also be presented in this paper.

Optical-Microwave Interactions in Semiconductor Devices.

Science.gov (United States)

1981-03-01

Interdigital Photoconductors ( IDPC ) ......... ..... 112 G. Conclusions.. ....... .. 120 6 CONCLUSIONS AND RECOMMENDATIONS FOR FUTURE WORK . 121...The detector developed at the Hughes Research Laboratories ( IDPC ) involves placing an interdigital metal electrode 53- 5 5 structure on top of a F...easier to perform with the IDPC detector. We believe the interdigital photoconductive detector has many advantages over existing detectors. First, the

Gas sensor based on photoconductive electrospun titania nanofibres operating at room temperature

Energy Technology Data Exchange (ETDEWEB)

Zampetti, E., E-mail: emiliano.zampetti@artov.imm.cnr.it; Macagnano, A.; Bearzotti, A. [Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR IMM) (Italy)

2013-04-15

An important drawback of semiconductor gas sensors is their operating temperature that needs the use of heaters. To overcome this problem a prototyping sensor using titania nanofibres (with an average diameter of 50 nm) as sensitive membrane were fabricated by electrospinning directly on the transducer of the sensor. Exploiting the effect of titania photoconductivity, resistance variations upon gas interaction under continuous irradiation of ultra violet light were measured at room temperature. The resistive sensor response was evaluated towards ammonia, nitrogen dioxide and humidity. The sensor exhibited a higher response to ammonia than to nitrogen dioxide, especially for concentrations larger than 100 ppb. For 200 ppb of ammonia and nitrogen dioxide, the responses were {approx}2.8 and 1.5 %, respectively.

Development and characterisation of MCT detectors for space astrophysics at CEA

Science.gov (United States)

Boulade, O.; Baier, N.; Castelein, P.; Cervera, C.; Chorier, P.; Destefanis, G.; Fièque, B.; Gravrand, O.; Guellec, F.; Moreau, V.; Mulet, P.; Pinsard, F.; Zanatta, J.-P.

2017-11-01

The Laboratoire Electronique et Traitement de l'Information (LETI) of the Commissariat à l'Energie Atomique (CEA, Grenoble, France) has been involved in the development of infrared detectors based on HgCdTe (MCT) material for over 30 years, mainly for defence and security programs [1]. Once the building blocks are developed at LETI (MCT material process, diode technology, hybridization, …), the industrialization is performed at SOFRADIR (also in Grenoble, France) which also has its own R&D program [2]. In past years, LETI also developed infrared detectors for space astrophysics in the mid infrared range - the long wave detector of the ISOCAM camera onboard ISO - as well as in the far infrared range - the bolometer arrays of the Herschel/PACS photometer unit -, both instruments which were under the responsibility of the Astrophysics department of CEA (IRFU/SAp, Saclay, France). Nowadays, the infrared detectors used in space and ground based astronomical instruments all come from vendors in the US. For programmatic reasons - increase the number of available vendors, decrease the cost, mitigate possible export regulations, …- as well as political ones - spend european money in Europe -, the European Space Agency (ESA) defined two roadmaps (one in the NIR-SWIR range, one in the MWIR-LWIR range) that will eventually allow for the procurement of infrared detectors for space astrophysics within Europe. The French Space Agency (CNES) also started the same sort of roadmaps, as part of its contribution to the different space missions which involve delivery of instruments by French laboratories. It is important to note that some of the developments foreseen in these roadmaps also apply to Earth Observations. One of the main goal of the ESA and CNES roadmaps is to reduce the level of dark current in MCT devices at all wavelengths. The objective is to use the detectors at the highest temperature where the noise induced by the dark current stays compatible with the photon

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

Science.gov (United States)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

Calibration Improvements in the Detector-to-Detector Differences for the MODIS Ocean Color Bands

Science.gov (United States)

Li, Yonghong; Angal, Amit; Wu, Aisheng; Geng, Xu; Link, Daniel; Xiong, Xiaoxiong

2016-01-01

The Moderate Resolution Imaging Spectroradiometer (MODIS), a major instrument within NASAs Earth Observation System missions, has operated for over 16 and 14 years onboard the Terra and Aqua satellites, respectively. Its reflective solar bands (RSB) covering a spectral range from 0.4 to 2.1 micrometers are primarily calibrated using the on-board solar diffuser(SD), with its on-orbit degradation monitored using the Solar Diffuser Stability Monitor. RSB calibrations are supplemented by near-monthly lunar measurements acquired from the instruments space-view port. Nine bands (bands 8-16) in the visible to near infrared spectral range from 0.412 to 0.866 micrometers are primarily used for ocean color observations.During a recent reprocessing of ocean color products, performed by the NASA Ocean Biology Processing Group, detector-to-detector differences of up to 1.5% were observed in bands 13-16 of Terra MODIS. This paper provides an overview of the current approach to characterize the MODIS detector-to-detector differences. An alternative methodology was developed to mitigate the observed impacts for bands 13-16. The results indicated an improvement in the detector residuals and in turn are expected to improve the MODIS ocean color products. This paper also discusses the limitations,subsequent enhancements, and the improvements planned for future MODIS calibration collections.

Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage

International Nuclear Information System (INIS)

Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan

2014-01-01

ZnO surfaces adsorb oxygen in the dark and emit CO 2 when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO, such as photoconductivity, photovoltage, and gas sensing, and has a role in ZnO electrical conduction. Using x-ray photoelectron spectroscopy on ZnO nanowires, we observed a decomposition of ZnO under white light and formation of oxygen-depleted surface, which explains photoconductivity by the electron donation of oxygen vacancies. Our findings suggest that the observed decomposition of the ZnO lattice may only take place due to photon-induced reduction of ZnO by carbon containing molecules (or carbo-photonic reduction), possibly from the ambient gas, accounting in a consistent way for both the reduced demands on the energy required for decomposition and for the observed emission of lattice oxygen in the form of CO 2 . The formation of oxygen-vacancy rich surface is suggested to induce surface delta doping, causing accumulation of electrons at the surface, which accounts for both the increase in conductivity and the flattening of the energy bands. Using surface photovoltage spectroscopy in ultra high vacuum, we monitored changes in the deep level spectrum. We observe a wide optical transition from a deep acceptor to the conduction band, which energy position coincides with the position of the so called “green luminescence” in ZnO. This green transition disappears with the formation of surface oxygen vacancies. Since the oxygen vacancies are donors, while the green transition involves surface acceptors, the results suggest that the initial emission of oxygen originates at the defect sites of the latter, thereby eliminating each other. This suggests that the green transition originates at surface Zn vacancy acceptors. Removing an oxygen atom from a Zn vacancy completes

Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage

Energy Technology Data Exchange (ETDEWEB)

Gurwitz, Ron; Cohen, Rotem; Shalish, Ilan, E-mail: shalish@ee.bgu.ac.il [Ben Gurion University, Beer Sheva 84105 (Israel)

2014-01-21

ZnO surfaces adsorb oxygen in the dark and emit CO{sub 2} when exposed to white light, reminiscent of the lungs of living creatures. We find that this exchange of oxygen with the ambient affects the integrity of the ZnO surface. Thus, it forms a basis for several interesting surface phenomena in ZnO, such as photoconductivity, photovoltage, and gas sensing, and has a role in ZnO electrical conduction. Using x-ray photoelectron spectroscopy on ZnO nanowires, we observed a decomposition of ZnO under white light and formation of oxygen-depleted surface, which explains photoconductivity by the electron donation of oxygen vacancies. Our findings suggest that the observed decomposition of the ZnO lattice may only take place due to photon-induced reduction of ZnO by carbon containing molecules (or carbo-photonic reduction), possibly from the ambient gas, accounting in a consistent way for both the reduced demands on the energy required for decomposition and for the observed emission of lattice oxygen in the form of CO{sub 2}. The formation of oxygen-vacancy rich surface is suggested to induce surface delta doping, causing accumulation of electrons at the surface, which accounts for both the increase in conductivity and the flattening of the energy bands. Using surface photovoltage spectroscopy in ultra high vacuum, we monitored changes in the deep level spectrum. We observe a wide optical transition from a deep acceptor to the conduction band, which energy position coincides with the position of the so called “green luminescence” in ZnO. This green transition disappears with the formation of surface oxygen vacancies. Since the oxygen vacancies are donors, while the green transition involves surface acceptors, the results suggest that the initial emission of oxygen originates at the defect sites of the latter, thereby eliminating each other. This suggests that the green transition originates at surface Zn vacancy acceptors. Removing an oxygen atom from a Zn vacancy

Instrument for the detection of meteors in the infrared

Science.gov (United States)

Svedhem, H.; Koschny, D.; Ter Haar, J.

2014-07-01

The flux of interplanetary particles in the size range 2 mm to 20 m is poorly constrained due to insufficient data --- the larger bodies may be observed remotely by ground-based or space-based telescopes and the smaller particles are measured by in-situ impact detectors in space or by meteor cameras from ground. An infrared video rate imager in Earth orbit would enable a systematic characterization for an extended period, day and night, of the flux in this range by monitoring the bright meteor/fireball generated during atmospheric entry. Due to the low flux of meteoroids in this range a very large detector is required. With this method a large portion of the Earth atmosphere is in fact used as a huge detector. Such an instrument has never flown in Earth orbit. The only sensors of a similar kind fly on US defense satellites for monitoring launches of ballistic missiles. The data from these sensors, however, is largely inaccessible to scientists. The knowledge on emission of light by meteors/bolides at infrared wavelengths is very limited while it can be suspected that the continuum emission from meteors/bolides have stronger emission at infrared wavelengths than in the visible due to the likely low temperatures of these events. At the same time line emission is dominating over the continuum in the visible so it is not clear how this will compare with the continuum in the infrared. We have developed a bread-board version of an IR video rate camera, the SPOSH-IR. The instrument is based on an earlier technology development, SPOSH --- Smart Panoramic Optical Sensor Head, for operation in the visible range, but with the sensor replaced by a cooled IR detector and new infrared optics. The earlier work has proven the concept of the instrument and of automatic detection of meteors/bolides in the visible wavelength range. The new hardware has been built by Jena-Optronik, Jena, Germany and has been tested during several meteor showers in the Netherlands and at ESA's OGS

ARNICA, the Arcetri near-infrared camera: Astronomical performance assessment.

Science.gov (United States)

Hunt, L. K.; Lisi, F.; Testi, L.; Baffa, C.; Borelli, S.; Maiolino, R.; Moriondo, G.; Stanga, R. M.

1996-01-01

The Arcetri near-infrared camera ARNICA was built as a users' instrument for the Infrared Telescope at Gornergrat (TIRGO), and is based on a 256x256 NICMOS 3 detector. In this paper, we discuss ARNICA's optical and astronomical performance at the TIRGO and at the William Herschel Telescope on La Palma. Optical performance is evaluated in terms of plate scale, distortion, point spread function, and ghosting. Astronomical performance is characterized by camera efficiency, sensitivity, and spatial uniformity of the photometry.

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

International Nuclear Information System (INIS)

Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

2014-01-01

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I excess  = I r0  + K 1 exp (K 2 V), where I r0 , K 1 , and K 2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers

Improved optical properties and detectivity of an uncooled silicon carbide mid-wave infrared optical detector with increased dopant concentration

International Nuclear Information System (INIS)

Lim, Geunsik; Kar, Aravinda; Manzur, Tariq

2012-01-01

An n-type 4H-SiC substrate is doped with gallium using a laser doping technique and its optical response is investigated at the mid-wave infrared (MWIR) wavelength 4.21 μm as a function of the dopant concentration. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 μm. Therefore, Ga-doped SiC can be used as an uncooled MWIR detector because an optical signal was obtained at this wavelength when the sample was at room temperature. The energy level of the Ga dopant in the substrate was confirmed by optical absorption spectroscopy. Secondary ion mass spectroscopy (SIMS) of the doped samples revealed an enhancement in the solid solubility of Ga in the substrate when doping is carried out by increasing the number of laser scans. A higher dopant concentration increases the number of holes in the dopant energy level, enabling photoexcitation of more electrons from the valence band by the incident MWIR photons. The detector performance improves as the dopant concentration increases from 1.15 × 10 19 to 6.25 × 10 20 cm −3 . The detectivity of the optical photodetector is found to be 1.07 × 10 10 cm Hz 1/2 W −1 for the case of doping with four laser passes. (paper)

Calorimetric energy-dispersive detectors for ion beam analysis

International Nuclear Information System (INIS)

Andersen, H.H.

1985-01-01

Energy-dispersive detectors for photons and alpha particles have recently been built. They are based on designs for infrared bolometric detectors working at liquid helium temperatures. For 5.5 Mev alpha particles the energy resolution (FWHM) has been published to be better than 35 keV in preliminary experiments, but thermodynamic limits to the resolution were calculated to be of the order of a few tens of eV. In the present paper limitations to the resolution caused by fluctuations in the processes converting particle energy to heat in the detectors will be calculated. It appears that an FWHM of a few hundred eV for MeV alphas may realistically be hoped for. As these detectors are windowless and may at the same time extend solid angles as large as surface-barrier detectors, be built in any desired geometrical shape, and work with count rates well above 10 3 Hz, exiting possibilities for ion beam analysis will open up through their realization. (orig.)

The Far-Infrared Surveyor (FIS) for AKARI

NARCIS (Netherlands)

Kawada, Mitsunobu; Baba, Hajime; Barthel, Peter D.; Clements, David; Cohen, Martin; Doi, Yasuo; Figueredo, Elysandra; Fujiwara, Mikio; Goto, Tomotsugu; Hasegawa, Sunao; Hibi, Yasunori; Hirao, Takanori; Hiromoto, Norihisa; Jeong, Woong-Seob; Kaneda, Hidehiro; Kawai, Toshihide; Kawamura, Akiko; Kester, Do; Kii, Tsuneo; Kobayashi, Hisato; Kwon, Suk Minn; Lee, Hyung Mok; Makiuti, Sin'itirou; Matsuo, Hiroshi; Matsuura, Shuji; Mueller, Thomas G.; Murakami, Noriko; Nagata, Hirohisa; Nakagawa, Takao; Narita, Masanao; Noda, Manabu; Oh, Sang Hoon; Okada, Yoko; Okuda, Haruyuki; Oliver, Sebastian; Ootsubo, Takafumi; Pak, Soojong; Park, Yong-Sun; Pearson, Chris P.; Rowan-Robinson, Michael; Saito, Toshinobu; Salama, Alberto; Sato, Shinji; Savage, Richard S.; Serjeant, Stephen; Shibai, Hiroshi; Shirahata, Mai; Sohn, Jungjoo; Suzuki, Toyoaki; Takagi, Toshinobu; Takahashi, Hidenori; Thomson, Matthew; Usui, Fumihiko; Verdugo, Eva; Watabe, Toyoki; White, Glenn J.; Wang, Lingyu; Yamamura, Issei; Yamauchi, Chisato; Yasuda, Akiko

2007-01-01

The Far-Infrared Surveyor (FIS) is one of two focal-plane instruments on the AKARI satellite. FIS has four photometric bands at 65, 90, 140, and 160 mu m, and uses two kinds of array detectors. The FIS arrays and optics are designed to sweep the sky with high spatial resolution and redundancy. The

Influence of material and geometry on the performance of superconducting nanowire single-photon detectors

CERN Document Server

Henrich, Dagmar

2013-01-01

Superconducting Nanowire Single-Photon Detectors offer the capability to detect electromagnetic waves on a single photon level in a wavelength range that far exceeds that of alternative detector types. However, above a certain threshold wavelength, the efficiency of those detectors decreases stronlgy, leading to a poor performance in the far-infrared range. Influences on this threshold are studied and approaches for improvement are verified experimentally by measurement of the device performance.

Apparatus and method for transient thermal infrared emission spectrometry

Science.gov (United States)

McClelland, John F.; Jones, Roger W.

1991-12-24

A method and apparatus for enabling analysis of a solid material (16, 42) by applying energy from an energy source (20, 70) top a surface region of the solid material sufficient to cause transient heating in a thin surface layer portion of the solid material (16, 42) so as to enable transient thermal emission of infrared radiation from the thin surface layer portion, and by detecting with a spectrometer/detector (28, 58) substantially only the transient thermal emission of infrared radiation from the thin surface layer portion of the solid material. The detected transient thermal emission of infrared radiation is sufficiently free of self-absorption by the solid material of emitted infrared radiation, so as to be indicative of characteristics relating to molecular composition of the solid material.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

Directory of Open Access Journals (Sweden)

Erwin Hack

2016-02-01

Full Text Available In terahertz (THz materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8–14 μm wavelength range, but are based on different absorber materials (i vanadium oxide; (ii amorphous silicon; (iii a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging.

Science.gov (United States)

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P; Zolliker, Peter

2016-02-06

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements

Science.gov (United States)

Malone, Mitchell C.; Morath, Christian P.; Fahey, Stephen; Klein, Brianna; Cowan, Vincent M.; Krishna, Sanjay

2015-09-01

InAs/GaSb type-II strained-layer superlattice (T2SLS) materials are being considered for space-based infrared detector applications. However, an inadequate understanding of the role of carrier transport, specifically the vertical mobility, in the radiation tolerance of T2SLS detectors remains. Here, progress towards a vertical transport study of proton-irradiated, p-type InAs/GaSb T2SLS materials using magnetoresistance measurements is reported. Measurements in the growth direction of square mesas formed from InAs/GaSb superlattice material were performed using two distinct contact geometries in a Kelvin mode setup at variable magnetic fields, ranging from -9 T to 9 T, and temperatures, ranging from 5 K and 300 K. The results here suggested multi-carrier conduction and a field-dependent series resistance from the contact layer were present. The implications of these results and the plans for future magnetoresistance measurements on proton-irradiated T2SLS materials are discussed.

Progress in the development of explosives materials detectors

International Nuclear Information System (INIS)

Williams, W.D.; Conrad, F.J.; Sandlin, L.L.; Burrows, T.A.

1978-01-01

Five hand-held explosives vapor detectors (Elscint Model EXD-2, ITI Model 70, Leigh-Marsland Model S-201, Pye Dynamics Model PD.2.A, and Xonics Model GC-710) were evaluated for sensitivity to a variety of explosives, identification of false alarm agents, and general performance and maintenance characteristics. The results of this evaluation, as presented, indicate that there is no single explosives detector which is best-suited for use at all nuclear facilities. Rather, there are several site-specific elements which must be considered when choosing an explosives detector. There are several new explosives detector technologies being developed which will out-perform existing commercial equipment. Some of these new detectors may be commercially available by the end of fiscal year 1980 and will be cost-effective to purchase and operate. The following areas of explosives detection research are discussed: nitrogen-phosphorous detectors, plasma chromatography, mass spectroscopy, small animal olfactory, vapor preconcentration, nuclear quadrupole resonance, far infrared radiation imaging, nuclear magnetic resonance, thermal neutron activation, and computerized tomography

EVALUATION OF A PORTABLE FOURIER TRANSFORM INFRARED GAS ANALYZER FOR MEASUREMENTS OF AIR TOXICS IN POLLUTION PREVENTION RESEARCH

Science.gov (United States)

A portable Fourier transform infrared gas analyzer with a photoacoustic detector performed reliably during pollution prevention research at two industrial facilities. It exhibited good agreement (within approximately 6%) with other analytical instruments (dispersive infrared and ...

Subnanosecond linear GaAs photoconductive switching: Revision 1

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.; Hofer, W.W.

1989-01-01

We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25--50kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is /approximately/10/sup /minus/14/ sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /mu/m. 4 refs., 11 figs.

Infrared-thermographic screening of the activity and enantioselectivity of enzymes.

Science.gov (United States)

Reetz, M T; Hermes, M; Becker, M H

2001-05-01

The infrared radiation caused by the heat of reaction of an enantioselective enzyme-catalyzed transformation can be detected by modern photovoltaic infrared (IR)-thermographic cameras equipped with focal-plane array detectors. Specifically, in the lipase-catalyzed enantioselective acylation of racemic 1-phenylethanol, the (R)- and (S)-substrates are allowed to react separately in the wells of microtiter plates, the (R)-alcohol showing hot spots in the IR-thermographic images. Thus, highly enantioselective enzymes can be identified at kinetic resolution.

Detectors and focal plane modules for weather satellites

Science.gov (United States)

D'Souza, A. I.; Robinson, E.; Masterjohn, S.; Ely, P.; Khalap, V.; Babu, S.; Smith, D. S.

2016-05-01

Weather satellite instruments require detectors with a variety of wavelengths ranging from the visible to VLWIR. One of the remote sensing applications is the geostationary GOES-ABI imager covering wavelengths from the 450 to 490 nm band through the 13.0 to 13.6 μm band. There are a total of 16 spectral bands covered. The Cross-track infrared Sounder (CrIS) is a Polar Orbiting interferometric sensor that measures earth radiances at high spectral resolution, using the data to provide pressure, temperature and moisture profiles of the atmosphere. The pressure, temperature and moisture sounding data are used in weather prediction models that track storms, predict levels of precipitation etc. The CrIS instrument contains SWIR (λc ~ 5 μm at 98K), MWIR (λc ~ 9 μm at 98K) and LWIRs (λc ~ 15.5 μm at 81K) bands in three Focal Plane Array Assemblies (FPAAs). GOES-ABI contains three focal plane modules (FPMs), (i) a visible-near infrared module consisting of three visible and three near infrared channels, (ii) a MWIR module comprised of five channels from 3.9 μm to 8.6 μm and (iii) a 9.6 μm to 13.3 μm, five-channel LWIR module. The VNIR FPM operates at 205 K, and the MWIR and LWIR FPMs operate at 60 K. Each spectral channel has a redundant array built into a single detector chip. Switching is thus permitted from the primary selected array in each channel to the redundant array, given any degradation in performance of the primary array during the course of the mission. Silicon p-i-n detectors are used for the 0.47 μm to 0.86 μm channels. The thirteen channels above 1 μm are fabricated in various compositions of Hg1-xCdxTe, and in this particular case using two different detector architectures. The 1.38 μm to 9.61 μm channels are all fabricated in Hg1-xCdxTe grown by Liquid Phase Epitaxy (LPE) using the HDVIP detector architecture. Molecular beam epitaxy (MBE)-grown Hg1-xCdxTe material are used for the LWIR 10.35 μm to 13.3 μm channels fabricated in Double

Characterization of deep energy levels in mercury iodide. Application to nuclear detection

International Nuclear Information System (INIS)

Mohammed Brahim, Tayeb.

1982-07-01

The last few years have seen an increasing interest in HgI 2 detectors for room temperature gamma and X-ray spectrometry. Performance and effective thickness of these detectors are presently limited by carrier trapping which results in incomplete charge collection. Characterization of the trapping levels has been performed by several photoelectronic methods (photoconductivity, thermal and optical quenching of the photoconductivity, TSC, lifetime measurement). A model is proposed taking into account the results obtained by these techniques and the polarization phenomena observed in nuclear detection in both vapor phase and solution grown crystals. For the latter, polarization can be eliminated or notably reduced by illumination of the positive electrode or by using a MIS positively biased structure [fr

The charge collection in single side silicon microstrip detectors

CERN Document Server

Eremin, V V; Roe, S; Ruggiero, G; Weilhammer, Peter

2003-01-01

The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness - with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3-1.55-μm Window

Science.gov (United States)

Golovynskyi, Sergii; Datsenko, Oleksandr I.; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Babichuk, Ivan S.; Golovynska, Iuliia; Qu, Junle

2018-04-01

Photoelectric properties of the metamorphic InAs/In x Ga1 - x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of In x Ga1 - x As cladding layer have been grown: indium content x was 0.15, 0.24, 0.28, and 0.31. InAs/In0.15Ga0.85As QD structure was found to be photosensitive in the telecom range at 1.3 μm. As x increases, a redshift was observed for all the samples, the structure with x = 0.31 was found to be sensitive near 1.55 μm, i.e., at the third telecommunication window. Simultaneously, only a slight decrease in the QD PC was recorded for increasing x, thus confirming a good photoresponse comparable with the one of In0.15Ga0.75As structures and of GaAs-based QD nanostructures. Also, the PC reduction correlate with the similar reduction of photoluminescence intensity. By simulating theoretically the quantum energy system and carrier localization in QDs, we gained insight into the PC mechanism and were able to suggest reasons for the photocurrent reduction, by associating them with peculiar behavior of defects in such a type of structures. All this implies that metamorphic QDs with a high x are valid structures for optoelectronic infrared light-sensitive devices.

Nonequilibrium Green's function theory of resonant steady state photoconduction in a double quantum well FET subject to THz radiation at plasmon frequency

International Nuclear Information System (INIS)

Horing, Norman J Morgenstern; Popov, Vyacheslav V

2006-01-01

Recent experimental observations by X.G. Peralta and S.J. Allen, et al. of dc photoconductivity resonances in steady source-drain current subject to terahertz radiation in a grid-gated double-quantum well FET suggested an association with plasmon resonances. This association was definitively confirmed for some parameter ranges in our detailed electrodynamic absorbance calculations. In this paper we propose that the reason that the dc photoconductance resonances match the plasmon resonances in semiconductors is based on a nonlinear dynamic screening mechanism. In this, we employ a shielded potential approximation that is nonlinear in the terahertz field to determine the nonequilibrium Green's function and associated density perturbation that govern the nonequilibrium dielectric polarization of the medium. This 'conditioning' of the system by the incident THz radiation results in resonant polarization response at the plasmon frequencies which, in turn, causes a sharp drop of the resistive shielded impurity scattering potentials and attendant increase of the dc source-drain current. This amounts to disabling the impurity scattering mechanism by plasmon resonant behavior in nonlinear screening

Influence Of Nonuniformity On Infrared Focal Plane Array Performance

Science.gov (United States)

Milton, A. F.; Barone, F. R.; Kruer, M. R.

1985-08-01

It is well known that detector response nonuniformity results in pattern noise with staring sensors that is a severe problem in the infrared due to the low intrinsic contrast of IR imagery. The pattern noise can be corrected by electronic processing; however, the ability to correct for pattern noise is limited by the interaction of interscene and intrascene variability with the dynamic range of the processor (number of bits) and, depending upon the algorithm used, by nonlinearities in the detector response. This paper quantifies these limitations and describes the interaction of detector gain nonuniformity and detector nonlinearities. Probabilistic models are developed to determine the maximum sensitivity that can be obtained using a two-point algorithm to correct a nonlinear response curve over a wide temperature range. Curves that permit a prediction of the noise equivalent differential temperature (NEAT) under varying circumstances are presented. A piecewise linear approach to dealing with severe detector response nonlinearities is presented and analyzed for its effectiveness.

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

Science.gov (United States)

Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.

1999-01-01

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

Science.gov (United States)

Zhou, Tian-Yu; Liu, Xue-Chao; Huang, Wei; Dai, Chong-Chong; Zheng, Yan-Qing; Shi, Er-Wei

2015-04-01

Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the on-state resistance of lateral PCSS with an n+-AZO subcontact layer is 14.7% lower than that of PCSS without an n+-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials. Project supported by the Innovation Program of the Shanghai Institute of Ceramics (Grant No. Y39ZC1110G), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), the Natural Science Foundation of Shanghai (Grant No. 14ZR1419000), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61404146), and the National High-tech R & D Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

Backshort-Under-Grid arrays for infrared astronomy

Science.gov (United States)

Allen, C. A.; Benford, D. J.; Chervenak, J. A.; Chuss, D. T.; Miller, T. M.; Moseley, S. H.; Staguhn, J. G.; Wollack, E. J.

2006-04-01

We are developing a kilopixel, filled bolometer array for space infrared astronomy. The array consists of three individual components, to be merged into a single, working unit; (1) a transition edge sensor bolometer array, operating in the milliKelvin regime, (2) a quarter-wave backshort grid, and (3) superconducting quantum interference device multiplexer readout. The detector array is designed as a filled, square grid of suspended, silicon bolometers with superconducting sensors. The backshort arrays are fabricated separately and will be positioned in the cavities created behind each detector during fabrication. The grids have a unique interlocking feature machined into the walls for positioning and mechanical stability. The spacing of the backshort beneath the detector grid can be set from ˜30 300 μm, by independently adjusting two process parameters during fabrication. The ultimate goal is to develop a large-format array architecture with background-limited sensitivity, suitable for a wide range of wavelengths and applications, to be directly bump bonded to a multiplexer circuit. We have produced prototype two-dimensional arrays having 8×8 detector elements. We present detector design, fabrication overview, and assembly technologies.

Fine-scale spatial response of CdZnTe radiation detectors

International Nuclear Information System (INIS)

Brunett, B.A.; Van Scyoc, J.M.; Hilton, N.R.; Lund, J.C.; James, R.B.; Schlesinger, T.E.

1998-01-01

Several studies have suggested that the uniformity of Cadmium Zinc Telluride (CZT) detectors play an important role in their performance when operated as gamma-ray spectrometers. However the detailed gamma response of simple planar detectors as a function of position over the device area is largely unknown. To address this issue the authors have built a system capable of measuring the detector response with a resolution of ∼250 (micro)m. The system consists of a highly collimated (∼200 (micro)m) photon source (<150 kev) scanned over the detector using a computer controlled two-axis translation stage. Fifteen samples configured as planar detectors were examined with the new apparatus. The material grade of the detectors examined varied from counter to select discriminator. Two classes of spatial response variation were observed and are presented here. Infrared (IR) transmission images were also acquired for each sample and correlation between features in the pulse height spectrum and crystalline defects were observed

Laser and beta source setup characterization of 3D-DDTC detectors fabricated at FBK-irst

Energy Technology Data Exchange (ETDEWEB)

Zoboli, A. [INFN, Sezione di Padova (Gruppo Collegato di Trento), and Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, Via Sommarive, 14, I-38050 Povo (Trento) (Italy)], E-mail: zoboli@disi.unitn.it; Dalla Betta, G.-F. [INFN, Sezione di Padova (Gruppo Collegato di Trento), and Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, Via Sommarive, 14, I-38050 Povo (Trento) (Italy); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38050 Povo (Trento) (Italy); Bosisio, L. [Dip. di Fisica e INFN, Universita di Trieste, I-34127, Trieste (Italy); Eckert, S.; Kuehn, S.; Parzefall, U. [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Piemonte, C.; Ronchin, S.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38050 Povo (Trento) (Italy)

2009-06-01

We report on the functional characterization of the first batch of 3D Double-Sided Double Type Column (3D-DDTC) detectors fabricated at FBK, Trento. This detector concept represents the evolution of the previous 3D-STC detectors towards full 3D detectors, and is expected to achieve a performance which is comparable to standard 3D detectors, but with a simpler fabrication process. Measurements were performed on detectors in the microstrip configuration coupled to the ATLAS ABCD3T binary readout. This paper reports spatially resolved signal efficiency tests made with a pulsed infrared laser setup and charge collection efficiency tests made with a Beta source.

Laser and beta source setup characterization of 3D-DDTC detectors fabricated at FBK-irst

International Nuclear Information System (INIS)

Zoboli, A.; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Eckert, S.; Kuehn, S.; Parzefall, U.; Piemonte, C.; Ronchin, S.; Zorzi, N.

2009-01-01

We report on the functional characterization of the first batch of 3D Double-Sided Double Type Column (3D-DDTC) detectors fabricated at FBK, Trento. This detector concept represents the evolution of the previous 3D-STC detectors towards full 3D detectors, and is expected to achieve a performance which is comparable to standard 3D detectors, but with a simpler fabrication process. Measurements were performed on detectors in the microstrip configuration coupled to the ATLAS ABCD3T binary readout. This paper reports spatially resolved signal efficiency tests made with a pulsed infrared laser setup and charge collection efficiency tests made with a Beta source.

Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

International Nuclear Information System (INIS)

Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

1989-05-01

Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

Infrared finiteness in Yang--Mills theories

International Nuclear Information System (INIS)

Appelquist, T.; Carazzone, J.; Kluberg-Stern, H.; Roth, M.

1976-01-01

The infrared divergences of renormalizable theories with coupled massless fields (in particular, the Yang--Mills theory) are shown to cancel for transition probabilities corresponding to finite-energy-resolution detectors, just as in quantum electrodynamics. This result is established through lowest nontrivial order in perturbation theory for the detection of massive muons in a quantum electrodynamic theory containing massless electrons or the detection of massive quarks in a Yang--Mills theory

MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

Energy Technology Data Exchange (ETDEWEB)

Kuznetzov, P. I., E-mail: pik218@ire216.msk.su; Averin, S. V., E-mail: sva278@ire216.msk.su; Zhitov, V. A.; Zakharov, L. Yu.; Kotov, V. M. [Russian Academy of Sciences, Kotel’nikov Institute of Radioengineering and Electronics (Fryazino Branch) (Russian Federation)

2017-02-15

On the basis of a type-II ZnSe/ZnTe superlattice, a MSM (metal—semiconductor–metal) photodetector is fabricated and investigated. The detector features low dark currents and a high sensitivity. The spectral characteristic of the detector provides the possibility of the selective detection of three separate spectral portions of visible and near-infrared radiation.

The infrared camera system on the HL-2A tokamak device

International Nuclear Information System (INIS)

Li Wei; Lu Jie; Yi Ping

2009-04-01

In order to measure and analyze the heat flux on the divertor plate under different discharge conditions, an infrared camera diagnostic system for HL-2A Device has been developed. The infrared camera diagnostic system mainly includes the thermograph with uncooled microbolometer Focal Plane Array detector, Zinc Selenide window, Firewire Fiber Repeaters, 50 m long fibers, magnetic shielding box and data acquisition card. The diagnostic system can provide high spatial resolution, long distance control and real-time data acquisition. Based on the surface temperature measured by the infrared camera diagnostic system and the knowledge of the copper thermal properties, the heat flux can be derived by heat conduct model. The infrared camera diagnostic system and preliminary results are presented in details. (authors)

32x32 HgCdTe/CCD infrared camera for the 2-5 micron range

International Nuclear Information System (INIS)

Monin, J.L.; Vauglin, I.; Sibille, F.

1988-01-01

The paper presents a complete infrared camera system, based on a high electron capacity detector (HgCdTe/CCD), that has been used under high background conditions to generate astronomical images. The performance of the system and some results are presented, and the use of such a detector in astronomy is discussed. 8 references

Progress on uncooled PbSe detectors for low-cost applications

Science.gov (United States)

Vergara, German; Gomez, Luis J.; Villamayor, Victor; Alvarez, M.; Rodrigo, Maria T.; del Carmen Torquemada, Maria; Sanchez, Fernando J.; Verdu, Marina; Diezhandino, Jorge; Rodriguez, Purificacion; Catalan, Irene; Almazan, Rosa; Plaza, Julio; Montojo, Maria T.

2004-08-01

This work reports on progress on development of polycrystalline PbSe infrared detectors at the Centro de Investigacion y Desarrollo de la Armada (CIDA). Since mid nineties, the CIDA owns an innovative technology for processing uncooled MWIR detectors of polycrystalline PbSe. Based on this technology, some applications have been developed. However, future applications demand smarter, more complex, faster yet cheaper detectors. Aiming to open new perspectives to polycrystalline PbSe detectors, we are currently working on different directions: 1) Processing of 2D arrays: a) Designing and processing low density x-y addressed arrays with 16x16 and 32x32 elements, as an extension of our standard technology. b) Trying to make compatible standard CMOS and polycrystalline PbSe technologies in order to process monolithic large format arrays. 2) Adding new features to the detector such as monolithically integrated spectral discrimination.

Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

CSIR Research Space (South Africa)

Baisitse, TR

2006-07-01

Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

Y-Ba-Cu-O thin films as high speed IR detectors

International Nuclear Information System (INIS)

Kwok, H.S.; Zheng, J.P.; Ying, Q.Y.

1990-01-01

Y-Ba-Cu-O thin film infrared detectors were fabricated and studied with various lasers. Operation of the detector in both the bolometric and nonbolometric modes was investigated at 10 microns with a CO2 laser. In the bolometric mode, the detectivity of the detector at 90 K was 2.1 x 10 to the 8th cm sq rt Hz/W with a response time of 15 microsec, corresponding to a bandwidth of 70 KHz. The speed of the detector in the nonbolometric mode was much faster and was beyond the instrument resolution. With a picosecond N2 laser, the output showed an instrument limited duration of 2 ns. The detectivity could not be determined in the nonbolometric mode due to the extremely low noise. The superconducting film quality is critical to the performance of these detectors. 27 refs

Development of transition edge superconducting bolometers for the SAFARI Far-Infrared spectrometer on the SPICA space-borne telescope

NARCIS (Netherlands)

Mauskopf, P.; Morozov, D.; Glowacka, D.; Goldie, D.; Withington, S.; Bruijn, M.; De Korte, P.; Hoevers, H.; Ridder, M.; Van der Kuur, J.; Gao, J.R.

2008-01-01

We describe the optimization of transition edge superconducting (TES) detectors for use in a far-infrared (FIR) Fourier transform spectrometer (FTS) mounted on a cryogenically cooled space-borne telescope (e.g. SPICA). The required noise equivalent power (NEP) of the detectors is approximately 10?19

Photoconductive properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag cell

Energy Technology Data Exchange (ETDEWEB)

Karimov, Khasan Sanginovich; Saeed, Muhammad Tariq; Khalid, Fazal Ahmad [GIK Institute of Engineering Sciences and Technology, Top 23640, Swabi, Khyber Pakhtunkhwa (Pakistan); Karieva, Zioda Mirzoevna, E-mail: tariqchani@hotmail.com [Tajik Technical University, Rajabov St.10, Dushanbe, 734000 (Tajikistan)

2011-07-15

A thin film of copper phthalocyanine (CuPc), a p-type semiconductor, was deposited by thermal evaporation in vacuum on an n-type gallium arsenide (GaAs) single-crystal semiconductor substrate. Then semi-transparent Ag thin film was deposited onto the CuPc film also by thermal evaporation to fabricate the Ag/p-CuPc/n-GaAs/Ag cell. Photoconduction of the cell was measured in photoresistive and photodiode modes of operation. It was observed that with an increase in illumination, the photoresistance decreased in reverse bias while it increased in forward bias. The photocurrent was increased in reverse bias operation. In forward bias operation with an increase in illumination, the photocurrent showed a different behavior depending on the voltage applied. (semiconductor physics)

Infrared radiation from dark globules

International Nuclear Information System (INIS)

Spencer, R.G.; Leung, C.M.

1978-01-01

Theoretical models are constructed by which to study the infrared emission from dark globules heated by the interstellar radiation field (ISRF). The effects of cloud parameters (grain type, optical depth, and density inhomogeneity) on the emergent spectrum and infrared surface brightnesses are studied. Compared with clouds which have internal heat sources, the emergent flux for globules is found to be at least a factor of 10 smaller and to peak at wavelengths 100 μm< or =lambda< or =130 μm for graphite clouds and 310 μm< or =lambda< or =550 μm for silicate clouds. Either limb brightening or limb darkening in the infrared can occur, which depends sensitively on the optical depth. For globules of moderate extinction (greater than approx.10 in the visible), significant infrared limb brightening occurs at wavelengths of grain emission (20 μm< or =lambda< or =600 μm). A physical interpretation of these results is presented. To help remove ambiguities from interpretations of future observations, the observable effects of a grain mixture, variation of the ISRF, as well as beam dilution are examined in detail. The presence of a second grain component alters the emergent spectrum significantly. For a variation of the ISRF within wide limits, the ratio of surface to central temperature (T/sub s//T/sub c/) of an optically thick cloud remains fairly constant (3< or approx. =T/sub s//T/sub c/< or approx. =4). Infrared limb brightening may be smoothed out by beam dilution as well as by density inhomogeneities. Finally, the expected flux densities in the infrared of a typical globule are presented for different beam sizes. The predicted fluxes are within the detection threshold of currently available infrared detectors, using either ground-based or balloon-borne telescopes

Development of an ultra-compact mid-infrared attenuated total reflectance spectrophotometer

Science.gov (United States)

Kim, Dong Soo; Lee, Tae-Ro; Yoon, Gilwon

2014-07-01

Mid-infrared spectroscopy has been an important tool widely used for qualitative analysis in various fields. However, portable or personal use is size and cost prohibitive for either Fourier transform infrared or attenuated total reflectance (ATR) spectrophotometers. In this study, we developed an ultra-compact ATR spectrophotometer whose frequency band was 5.5-11.0 μm. We used miniature components, such as a light source fabricated by semiconductor technology, a linear variable filter, and a pyro-electric array detector. There were no moving parts. Optimal design based on two light sources, a zippered configuration of the array detector and ATR optics could produce absorption spectra that might be used for qualitative analysis. A microprocessor synchronized the pulsed light sources and detector, and all the signals were processed digitally. The size was 13.5×8.5×3.5 cm3 and the weight was 300 grams. Due to its low cost, our spectrophotometer can replace many online monitoring devices. Another application could be for a u-healthcare system installed in the bathroom or attached to a smartphone for monitoring substances in body fluids.

Using a CO2 laser for PIR-detector spoofing

NARCIS (Netherlands)

Schleijpen, R.; Putten, F.J.M. van

2016-01-01

This paper presents experimental work on the use of a CO2 laser for triggering of PIR sensors. Pyro-electric InfraRed sensors are often used as motion detectors for detection of moving persons or objects that are warmer than their environment. Apart from uses in the civilian domain, also

Life test of the InGaAs focal plane arrays detector for space applications

Science.gov (United States)

Zhu, Xian-Liang; Zhang, Hai-Yan; Li, Xue; Huang, Zhang-Cheng; Gong, Hai-Mei

2017-08-01

The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C 80°C 90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).

Obstacle detectors for automated transit vehicles: A technoeconomic and market analysis

Science.gov (United States)

Lockerby, C. E.

1979-01-01

A search was conducted to identify the technical and economic characteristics of both NASA and nonNASA obstacle detectors. The findings, along with market information were compiled and analyzed for consideration by DOT and NASA in decisions about any future automated transit vehicle obstacle detector research, development, or applications project. Currently available obstacle detectors and systems under development are identified by type (sonic, capacitance, infrared/optical, guided radar, and probe contact) and compared with the three NASA devices selected as possible improvements or solutions to the problems in existing obstacle detection systems. Cost analyses and market forecasts individually for the AGT and AMTV markets are included.

Far infrared through millimeter backshort-under-grid arrays

Science.gov (United States)

Allen, Christine A.; Abrahams, John; Benford, Dominic J.; Chervenak, James A.; Chuss, David T.; Staguhn, Johannes G.; Miller, Timothy M.; Moseley, S. Harvey; Wollack, Edward J.

2006-06-01

We are developing a large-format, versatile, bolometer array for a wide range of infrared through millimeter astronomical applications. The array design consists of three key components - superconducting transition edge sensor bolometer arrays, quarter-wave reflective backshort grids, and Superconducting Quantum Interference Device (SQUID) multiplexer readouts. The detector array is a filled, square grid of bolometers with superconducting sensors. The backshort arrays are fabricated separately and are positioned in the etch cavities behind the detector grid. The grids have unique three-dimensional interlocking features micromachined into the walls for positioning and mechanical stability. The ultimate goal of the program is to produce large-format arrays with background-limited sensitivity, suitable for a wide range of wavelengths and applications. Large-format (kilopixel) arrays will be directly indium bump bonded to a SQUID multiplexer circuit. We have produced and tested 8×8 arrays of 1 mm detectors to demonstrate proof of concept. 8×16 arrays of 2 mm detectors are being produced for a new Goddard Space Flight Center instrument. We have also produced models of a kilopixel detector grid and dummy multiplexer chip for bump bonding development. We present detector design overview, several unique fabrication highlights, and assembly technologies.

Application of a-Si:H radiation detectors in medical imaging

International Nuclear Information System (INIS)

Lee, Hyoung-Koo.

1995-06-01

Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 ∼ 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered γ-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at -26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the γ-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays

Persistent photoconductivity in YBa2Cu3Ox by visible and UV excitation below Tc

International Nuclear Information System (INIS)

Markowitsch, W.; Altenburger, A.; LA, W.; Peruzzi, M.; Pedarnig, J.D.; Baeuerle, D.

2004-01-01

We studied the persistent photoconductivity in underdoped metallic YBa 2 Cu 3 O x (x∼6.6) by visible and UV excitation above and below T c . The results show that the photodoping effect exists also when the sample is in the superconducting state and that its efficiency is approximately the same as at low temperatures above T c . The dependence of the effect on the temperature where the photodoping is performed is essentially the same for visible light and UV radiation, i.e., a relatively small effect at low temperatures but a significantly larger effect near room temperature. We also observed that the efficiency is somewhat smaller with UV radiation, in contrast to previous results in semiconducting samples

Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

International Nuclear Information System (INIS)

Qi-Feng, Hou; Xiao-Liang, Wang; Hong-Ling, Xiao; Cui-Mei, Wang; Cui-Bai, Yang; Jin-Min, Li

2010-01-01

The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35eV, 1.55eV, 1.98eV, and 2.60eV are observed. It is found that the 1.98eV quenching band is dominated in all the samples and the 2.60eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60eV are discussed. It is suggested that the defect level responsible for quenching at 2.60eV plays an important role for the enhancement of resistivity

Emerging technologies for high performance infrared detectors

Science.gov (United States)

Tan, Chee Leong; Mohseni, Hooman

2018-01-01

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

Emerging technologies for high performance infrared detectors

Directory of Open Access Journals (Sweden)

Tan Chee Leong

2018-01-01

Full Text Available Infrared photodetectors (IRPDs have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

Life Finder Detectors: An Overview of Detector Technologies for Detecting Life on Other Worlds

Science.gov (United States)

Rauscher, Bernard J.; Domagal-Goldman, Shawn; Greenhouse, Matthew A.; Hsieh, Wen-Ting; McElwain, Michael W.; Moseley, Samuel H.; Noroozian, Omid; Norton, Tim; Kutyrev, Alexander; Rinehart, Stephen; stock, Joseph

2015-01-01

Future large space telescopes will seek evidence for life on other worlds by searching for spectroscopic biosignatures. Atmospheric biosignature gases include oxygen, ozone, water vapor, and methane. Non-biological gases, including carbon monoxide and carbon dioxide, are important for discriminating false positives. All of these gases imprint spectroscopic features in the UV through mid-IR that are potentially detectable using future space based coronagraphs or star shades for starlight suppression.Direct spectroscopic biosignature detection requires sensors capable of robustly measuring photon arrival rates on the order of 10 per resolution element per hour. Photon counting is required for some wavefront sensing and control approaches to achieve the requisite high contrast ratios. We review life finder detector technologies that either exist today, or are under development, that have the potential to meet these challenging requirements. We specifically highlight areas where more work or development is needed.Life finder detectors will be invaluable for a wide variety of other major science programs. Because of its cross cutting nature; UV, optical, and infrared (UVOIR) detector development features prominently in the 2010 National Research Council Decadal Survey, 'New Worlds, New Horizons in Astronomy and Astrophysics', and the NASA Cosmic Origins Program Technology Roadmap.

Scale invariant SURF detector and automatic clustering segmentation for infrared small targets detection

Science.gov (United States)

Zhang, Haiying; Bai, Jiaojiao; Li, Zhengjie; Liu, Yan; Liu, Kunhong

2017-06-01

The detection and discrimination of infrared small dim targets is a challenge in automatic target recognition (ATR), because there is no salient information of size, shape and texture. Many researchers focus on mining more discriminative information of targets in temporal-spatial. However, such information may not be available with the change of imaging environments, and the targets size and intensity keep changing in different imaging distance. So in this paper, we propose a novel research scheme using density-based clustering and backtracking strategy. In this scheme, the speeded up robust feature (SURF) detector is applied to capture candidate targets in single frame at first. And then, these points are mapped into one frame, so that target traces form a local aggregation pattern. In order to isolate the targets from noises, a newly proposed density-based clustering algorithm, fast search and find of density peak (FSFDP for short), is employed to cluster targets by the spatial intensive distribution. Two important factors of the algorithm, percent and γ , are exploited fully to determine the clustering scale automatically, so as to extract the trace with highest clutter suppression ratio. And at the final step, a backtracking algorithm is designed to detect and discriminate target trace as well as to eliminate clutter. The consistence and continuity of the short-time target trajectory in temporal-spatial is incorporated into the bounding function to speed up the pruning. Compared with several state-of-arts methods, our algorithm is more effective for the dim targets with lower signal-to clutter ratio (SCR). Furthermore, it avoids constructing the candidate target trajectory searching space, so its time complexity is limited to a polynomial level. The extensive experimental results show that it has superior performance in probability of detection (Pd) and false alarm suppressing rate aiming at variety of complex backgrounds.

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

Science.gov (United States)

Jones, B.

1985-01-01

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

Advances in research and development homojunction and quantum-well infrared detectors

CERN Document Server

Francombe, Maurice H

1995-01-01

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of twenty volumes since 1963. The series contains quality studies of the properties of various thinfilms materials and systems.In order to be able to reflect the development of today''s science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.Key Features* Discusses the latest research about structure, physics, and infrared photoemissive behavior of heavily doped silicon homojunctions and Ge and GaAs-based alloy junctions* Reviews the current status of SiGe/Si quantum wells for infrared detection* Discusses key developments in the gro...

Development of a fire detector for underground coal mines

Energy Technology Data Exchange (ETDEWEB)

Hemingway, M.A.; Walsh, P.T.; Hunneyball, S.R.; Williams, M.; Jobling, S.; Pell, B.; West, N.G. [Health and Safety Laboratory, Buxton (United Kingdom)

2005-07-01

Current fire detectors in use in UK coal mines, based on semiconductor sensors which detect gaseous products of combustion, are under-utilised, are not user-friendly, have performance limitations due to interferences and are obsolete. A joint research project was therefore instigated to develop an improved fire detector. This paper describes tests performed in an experimental mine roadway on various types of sensor. The sensors were exposed to smouldering conveyor belt, coal, wood, oil and grease, and diesel exhaust fume. A potential advanced detector is based on the combination of blue and infrared optical smoke sensors which distinguish fires and diesel exhaust from coal dust, nitric oxide or nitrogen dioxide sensors to distinguish smoulderi8ng fires form diesel exhaust, and carbon monoxide sensors for general body monitoring. 6 refs., 5 figs.

Automated vehicle detection in forward-looking infrared imagery.

Science.gov (United States)

Der, Sandor; Chan, Alex; Nasrabadi, Nasser; Kwon, Heesung

2004-01-10

We describe an algorithm for the detection and clutter rejection of military vehicles in forward-looking infrared (FLIR) imagery. The detection algorithm is designed to be a prescreener that selects regions for further analysis and uses a spatial anomaly approach that looks for target-sized regions of the image that differ in texture, brightness, edge strength, or other spatial characteristics. The features are linearly combined to form a confidence image that is thresholded to find likely target locations. The clutter rejection portion uses target-specific information extracted from training samples to reduce the false alarms of the detector. The outputs of the clutter rejecter and detector are combined by a higher-level evidence integrator to improve performance over simple concatenation of the detector and clutter rejecter. The algorithm has been applied to a large number of FLIR imagery sets, and some of these results are presented here.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

Science.gov (United States)

2012-09-01

its effect on the optical beam. Computer Tunable optical source Detectors Test MSM detector Lock-in- amplifier Multiplexer Transimpedance ... amplifier Three-way beam splitter L3 sample L1 Light source L4 L2 Reference Detector Reflectance Detector

Time-resolved terahertz spectroscopy of semiconductor nanostructures

DEFF Research Database (Denmark)

Porte, Henrik

This thesis describes time-resolved terahertz spectroscopy measurements on various semiconductor nanostructures. The aim is to study the carrier dynamics in these nanostructures on a picosecond timescale. In a typical experiment carriers are excited with a visible or near-infrared pulse and by me......This thesis describes time-resolved terahertz spectroscopy measurements on various semiconductor nanostructures. The aim is to study the carrier dynamics in these nanostructures on a picosecond timescale. In a typical experiment carriers are excited with a visible or near-infrared pulse...... and by measuring the transmission of a terahertz probe pulse, the photoconductivity of the excited sample can be obtained. By changing the relative arrival time at the sample between the pump and the probe pulse, the photoconductivity dynamics can be studied on a picosecond timescale. The rst studied semiconductor...

10μm pitch family of InSb and XBn detectors for MWIR imaging

Science.gov (United States)

Gershon, G.; Avnon, E.; Brumer, M.; Freiman, W.; Karni, Y.; Niderman, T.; Ofer, O.; Rosenstock, T.; Seref, D.; Shiloah, N.; Shkedy, L.; Tessler, R.; Shtrichman, I.

2017-02-01

There has been a growing demand over the past few years for infrared detectors with a smaller pixel dimension. On the one hand, this trend of pixel shrinkage enables the overall size of a given Focal Plan Array (FPA) to be reduced, allowing the production of more compact, lower power, and lower cost electro-optical (EO) systems. On the other hand, it enables a higher image resolution for a given FPA area, which is especially suitable in infrared systems with a large format that are used with a wide Field of View (FOV). In response to these market trends SCD has developed the Blackbird family of 10 μm pitch MWIR digital infrared detectors. The Blackbird family is based on three different Read- Out Integrated Circuit (ROIC) formats: 1920×1536, 1280×1024 and 640×512, which exploit advanced and mature 0.18 μm CMOS technology and exhibit high functionality with relatively low power consumption. Two types of 10 μm pixel sensing arrays are supported. The first is an InSb photodiode array based on SCD's mature planar implanted p-n junction technology, which covers the full MWIR band, and is designed to operate at 77K. The second type of sensing array covers the blue part of the MWIR band and uses the patented XBn-InAsSb barrier detector technology that provides electro-optical performance equivalent to planar InSb but at operating temperatures as high as 150 K. The XBn detector is therefore ideal for low Size, Weight and Power (SWaP) applications. Both sensing arrays, InSb and XBn, are Flip-chip bonded to the ROICs and assembled into custom designed Dewars that can withstand harsh environmental conditions while minimizing the detector heat load. A dedicated proximity electronics board provides power supplies and timing to the ROIC and enables communication and video output to the system. Together with a wide range of cryogenic coolers, a high flexibility of housing designs and various modes of operation, the Blackbird family of detectors presents solutions for EO

Performance evaluation of 3D-DDTC detectors on p-type substrates

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Boscardin, Maurizio; Bosisio, Luciano; Koehler, Michael; Parzefall, Ulrich; Ronchin, Sabina; Wiik, Liv; Zoboli, Andrea; Zorzi, Nicola

2010-01-01

In this work, we report on the noise and signal properties of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) detectors fabricated at FBK-irst (Trento, Italy). Compared to full 3D detectors, devices made with this approach allow for a simpler fabrication process, but the efficiency and speed of the charge collection process critically depend on the column overlap and should be carefully evaluated. Measurements were performed on detectors in the microstrip configuration coupled to the ATLAS ABCD3T binary read-out. Spatially resolved signal efficiency tests made with a pulsed infrared laser setup and charge collection efficiency tests made with a β source setup are here reported.

Performance evaluation of 3D-DDTC detectors on p-type substrates

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, Gian-Franco, E-mail: dallabe@disi.unitn.i [Dipartimento Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN Trento, via Sommarive 14, 38123 Povo di Trento (Italy); Boscardin, Maurizio [Fondazione Bruno Kessler (FBK-irst), via Sommarive 18, 38123 Povo di Trento (Italy); Bosisio, Luciano [Dipartimento di Fisica, Universita di Trieste, and INFN Trieste, via A. Valerio 2, 34127 Trieste (Italy); Koehler, Michael; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Ronchin, Sabina [Fondazione Bruno Kessler (FBK-irst), via Sommarive 18, 38123 Povo di Trento (Italy); Wiik, Liv [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zoboli, Andrea [Dipartimento Ingegneria e Scienza dell' Informazione, Universita di Trento, and INFN Trento, via Sommarive 14, 38123 Povo di Trento (Italy); Zorzi, Nicola [Fondazione Bruno Kessler (FBK-irst), via Sommarive 18, 38123 Povo di Trento (Italy)

2010-12-11

In this work, we report on the noise and signal properties of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) detectors fabricated at FBK-irst (Trento, Italy). Compared to full 3D detectors, devices made with this approach allow for a simpler fabrication process, but the efficiency and speed of the charge collection process critically depend on the column overlap and should be carefully evaluated. Measurements were performed on detectors in the microstrip configuration coupled to the ATLAS ABCD3T binary read-out. Spatially resolved signal efficiency tests made with a pulsed infrared laser setup and charge collection efficiency tests made with a {beta} source setup are here reported.

Scientific detectors for astronomy 2005 Explorers of the Photon Odyssey

CERN Document Server

Beletic, Jenna E; Amico, Paola

2006-01-01

Every three years, the leading experts in detectors for astronomy gather together to exchange information and form professional relationships. This series of meetings is entitled Scientific Detectors for Astronomy. The meeting has been held six times, with the last four publishing hardcover proceedings. Nearly all leading astronomical observatories and manufacturers attend this meeting, with participants from every continent of the world. The 2005 meeting in Taormina, Italy was attended by 127 professionals who develop and use the highest quality detectors for wavelengths from x-ray to sub-mm, with emphasis on optical and infrared detectors. The meeting consisted of overview talks, technical presentations, poster sessions and roundtable discussions. In addition, a strong cultural programme exposed the participants to the host region while fostering the enhancement of professional relationships. These proceedings capture the technical content and the spirit of the 2005 workshop. The 87 papers cover a wide rang...

Multi-channel near infrared spectroradiometer

International Nuclear Information System (INIS)

Joseph, G.B.; Biddles, B.J.; D'silva, R.A.; Picot, A.J.; Ackerman, M.J.

1988-01-01

A multichannel spectroradiometer has been developed by Sira Ltd. for the study of rapidly varying events in the near infrared. The instrument is being used in the examination of gun flashes, rocket motor exhaust efflux analysis and ordnance or pyrotechnic flash studies. The spectral range of about 1.4 to 5.2 microns is covered in two bands with the first order dispersion from a pair of ruled blazed gratings being imaged onto a pair of detector arrays. Data may be logged at a rate of 1000 complete spectra per second

Infrared beam-steering using acoustically modulated surface plasmons over a graphene monolayer

KAUST Repository

Chen, Paiyen

2014-09-01

We model and design a graphene-based infrared beamformer based on the concept of leaky-wave (fast traveling wave) antennas. The excitation of infrared surface plasmon polaritons (SPPs) over a \\'one-atom-thick\\' graphene monolayer is typically associated with intrinsically \\'slow light\\'. By modulating the graphene with elastic vibrations based on flexural waves, a dynamic diffraction grating can be formed on the graphene surface, converting propagating SPPs into fast surface waves, able to radiate directive infrared beams into the background medium. This scheme allows fast on-off switching of infrared emission and dynamic tuning of its radiation pattern, beam angle and frequency of operation, by simply varying the acoustic frequency that controls the effective grating period. We envision that this graphene beamformer may be integrated into reconfigurable transmitter/receiver modules, switches and detectors for THz and infrared wireless communication, sensing, imaging and actuation systems.

Research on metal-plated cellulose nitrate flakes and their infrared / millimeter wave characteristics

Science.gov (United States)

Ye, Shu-qin; Zhu, Chen-guang; Wang, Li-hong; Ou'yang, De-hua; Pan, Gong-pei

2016-10-01

Copper-plated and silver-plated cellulose nitrate flakes, which were prepared by using chemical plating technology, were used to jam infrared detector and millimeter-wave radar. It was tested for the conductivity and infrared jamming performance of plating and also the RCS (Radar Cross Section) performance of millimeter-wave radar. Test results showed that the prepared metal-plated cellulose nitrate flakes have obvious conductivity, and infrared total radiation energy of silver plating and copper plating had approximately increased 32% and 21% respectively. Through determination, the millimeter-wave reflecting property and RCS of silver-plated cellulose nitrate flakes were higher than that of copper-plated cellulose nitrate flakes. Therefore, silver-plated cellulose nitrate flakes can be used as an effective infrared / millimeter wave composite jamming material.

Bursting Smoke as an Infrared Countermeasure

OpenAIRE

Amarjit Singh; P. J. Kamale; S. A. Joshi; L. K. Bankar

1998-01-01

This paper describes the experimental setup for the evaluation of bursting smoke for anti-infrared role using SR-5000 spectroradiometer and a source of IR radiation (8-13 micrometer) using cadmium-mercury-telluride (CMI) detector cooled by liquid nitrogen. The particle size and shape of the powders used in the bursting smokes were determined microscopically using Carl Zeiss Jena Neophot- 21. Highest attenuation of 97 -lOO percent was produced for about 12 s using a mixture of bronze fl...

Near-infrared scintillation of liquid argon

Energy Technology Data Exchange (ETDEWEB)

Alexander, T. [Fermilab; Escobar, C. O. [Campinas State U.; Lippincott, W. H. [Fermilab; Rubinov, P. [Fermilab

2016-03-03

Since the 1970s it has been known that noble gases scintillate in the near infrared (NIR) region of the spectrum (0.7 $\\mu$m < $\\lambda$; < 1.5$\\mu$m). More controversial has been the question of the NIR light yield for condensed noble gases. We first present the motivation for using the NIR scintillation in liquid argon detectors, then briefly review early as well as more recent efforts and finally show encouraging preliminary results of a test performed at Fermilab.

Long-wavelength germanium photodetectors by ion implantation

International Nuclear Information System (INIS)

Wu, I.C.; Beeman, J.W.; Luke, P.N.; Hansen, W.L.; Haller, E.E.

1990-11-01

Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3 K under an operating bias of up to 70 mV. Optimum peak responsivity and noise equivalent power (NEP) for these sensitive detectors are 0.9 A/W and 5 x 10 -16 W/Hz 1/2 at 99 μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed. 12 refs., 4 figs

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

Science.gov (United States)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

Optics Alignment of a Balloon-Borne Far-Infrared Interferometer BETTII

Science.gov (United States)

Dhabal, Arnab; Rinehart, Stephen A.; Rizzo, Maxime J.; Mundy, Lee; Sampler, Henry; Juanola Parramon, Roser; Veach, Todd; Fixsen, Dale; Vila Hernandez De Lorenzo, Jor; Silverberg, Robert F.

2017-01-01

The Balloon Experimental Twin Telescope for Infrared Interferometry (BETTII) is an 8-m baseline far-infrared (FIR: 30 90 micrometer) interferometer providing spatially resolved spectroscopy. The initial scientific focus of BETTII is on clustered star formation, but this capability likely has a much broader scientific application.One critical step in developing an interferometer, such as BETTII, is the optical alignment of the system. We discuss how we determine alignment sensitivities of different optical elements on the interferogram outputs. Accordingly, an alignment plan is executed that makes use of a laser tracker and theodolites for precise optical metrology of both the large external optics and the small optics inside the cryostat. We test our alignment on the ground by pointing BETTII to bright near-infrared sources and obtaining their images in the tracking detectors.

InGaAs/InAlAs superlattice detector for THz radiation

CERN Document Server

Schomburg, E; Kratschmer, M; Vollnhals, A; Scheuerer, R; Renk, K F; Ustinov, V; Zhukov, A; Kovsh, A

2002-01-01

We report the use of an InGaAs/InAlAs superlattice for detection of THz radiation pulses generated by a free-electron-laser (FELIX). The detector showed a response corresponding to a reduction of the direct current through the superlattice. The current reduction is attributed to the THz-field induced modulation of Bloch oscillations performed by miniband electrons. The detector response was measured in a frequency range between 4 and 12 THz and showed strong minima at the frequencies of infrared active transverse optic phonons. (10 refs).

Region descriptors for automatic classification of small sea targets in infrared video

NARCIS (Netherlands)

Mouthaan, M.M.; Broek, S.P. van den; Hendriks, E.A.; Schwering, P.B.W.

2011-01-01

We evaluate the performance of different key-point detectors and region descriptors when used for automatic classification of small sea targets in infrared video. In our earlier research performed on this subject as well as in other literature, many different region descriptors have been proposed.

Bolometric kinetic inductance detector technology for sub-millimeter radiometric imaging

Science.gov (United States)

Hassel, Juha; Timofeev, Andrey V.; Vesterinen, Visa; Sipola, Hannu; Helistö, Panu; Aikio, Mika; Mäyrä, Aki; Grönberg, Leif; Luukanen, Arttu

2015-10-01

Radiometric sub-millimeter imaging is a candidate technology especially in security screening applications utilizing the property of radiation in the band of 0.2 - 1.0 THz to penetrate through dielectric substances such as clothing. The challenge of the passive technology is the fact that the irradiance corresponding to the blackbody radiation is very weak in this spectral band: about two orders of magnitude below that of the infrared band. Therefore the role of the detector technology is of ultimate importance to achieve sufficient sensitivity. In this paper we present results related to our technology relying on superconducting kinetic inductance detectors operating in a thermal (bolometric) mode. The detector technology is motivated by the fact that it is naturally suitable for scalable multiplexed readout systems, and operates with relatively simple cryogenics. We will review the basic concepts of the detectors, and provide experimental figures of merit. Furthermore, we will discuss the issues related to the scale-up of our detector technology into large 2D focal plane arrays.

Internal stray radiation measurement for cryogenic infrared imaging systems using a spherical mirror.

Science.gov (United States)

Tian, Qijie; Chang, Songtao; He, Fengyun; Li, Zhou; Qiao, Yanfeng

2017-06-10

Internal stray radiation is a key factor that influences infrared imaging systems, and its suppression level is an important criterion to evaluate system performance, especially for cryogenic infrared imaging systems, which are highly sensitive to thermal sources. In order to achieve accurate measurement for internal stray radiation, an approach is proposed, which is based on radiometric calibration using a spherical mirror. First of all, the theory of spherical mirror design is introduced. Then, the calibration formula considering the integration time is presented. Following this, the details regarding the measurement method are presented. By placing a spherical mirror in front of the infrared detector, the influence of internal factors of the detector on system output can be obtained. According to the calibration results of the infrared imaging system, the output caused by internal stray radiation can be acquired. Finally, several experiments are performed in a chamber with controllable inside temperatures to validate the theory proposed in this paper. Experimental results show that the measurement results are in good accordance with the theoretical analysis, and demonstrate that the proposed theories are valid and can be employed in practical applications. The proposed method can achieve accurate measurement for internal stray radiation at arbitrary integration time and ambient temperatures. The measurement result can be used to evaluate whether the suppression level meets the system requirement.

Instrumentation for Kinetic-Inductance-Detector-Based Submillimeter Radio Astronomy

Science.gov (United States)

Duan, Ran

A substantial amount of important scientific information is contained within astronomical data at the submillimeter and far-infrared (FIR) wavelengths, including information regarding dusty galaxies, galaxy clusters, and star-forming regions; however, these wavelengths are among the least-explored fields in astronomy because of the technological difficulties involved in such research. Over the past 20 years, considerable efforts have been devoted to developing submillimeter- and millimeter-wavelength astronomical instruments and telescopes. The number of detectors is an important property of such instruments and is the subject of the current study. Future telescopes will require as many as hundreds of thousands of detectors to meet the necessary requirements in terms of the field of view, scan speed, and resolution. A large pixel count is one benefit of the development of multiplexable detectors that use kinetic inductance detector (KID) technology. This dissertation presents the development of a KID-based instrument including a portion of the millimeter-wave bandpass filters and all aspects of the readout electronics, which together enabled one of the largest detector counts achieved to date in submillimeter-/millimeter-wavelength imaging arrays: a total of 2304 detectors. The work presented in this dissertation has been implemented in the MUltiwavelength Submillimeter Inductance Camera (MUSIC), a new instrument for the Caltech Submillimeter Observatory (CSO).

Voxel-based measurement sensitivity of spatially resolved near-infrared spectroscopy in layered tissues.

Science.gov (United States)

Niwayama, Masatsugu

2018-03-01

We quantitatively investigated the measurement sensitivity of spatially resolved spectroscopy (SRS) across six tissue models: cerebral tissue, a small animal brain, the forehead of a fetus, an adult brain, forearm muscle, and thigh muscle. The optical path length in the voxel of the model was analyzed using Monte Carlo simulations. It was found that the measurement sensitivity can be represented as the product of the change in the absorption coefficient and the difference in optical path length in two states with different source-detector distances. The results clarified the sensitivity ratio between the surface layer and the deep layer at each source-detector distance for each model and identified changes in the deep measurement area when one of the detectors was close to the light source. A comparison was made with the results from continuous-wave spectroscopy. The study also identified measurement challenges that arise when the surface layer is inhomogeneous. Findings on the measurement sensitivity of SRS at each voxel and in each layer can support the correct interpretation of measured values when near-infrared oximetry or functional near-infrared spectroscopy is used to investigate different tissue structures. (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Development of a new diffuse near-infrared food measuring

Science.gov (United States)

Zhang, Jun; Piao, Renguan

2006-11-01

Industries from agriculture to petrochemistry have found near infrared (NIR) spectroscopic analysis useful for quality control and quantitative analysis of materials and products. The general chemical, polymer chemistry, petrochemistry, agriculture, food and textile industries are currently using NIR spectroscopic methods for analysis. In this study, we developed a new sort NIR instrument for food measuring. The instrument consists of a light source, 12 filters to the prismatic part. The special part is that we use a mirror to get two beams of light. And two PbS detectors were used. One detector collected the radiation of one light beam directly and the value was set as the standard instead the standard white surface. Another light beam irradiate the sample surface, and the diffuse light was collected by another detector. The value of the two detectors was compared and the absorbency was computed. We tested the performance of the NIR instrument in determining the protein and fat content of milk powder. The calibration showed the accuracy of the instrument in practice.

Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991

Science.gov (United States)

Heinen, Vernon O.; Bhasin, Kul B.

Topics discussed include thin-film technology, microwave transmission lines and resonators, microwave devices and circuits, infrared detectors and bolometers, and superconducting junctions. Papers are presented on possible enhancement in bolometric response using free-standing film of YBa2Cu3O(x), aging and surface instability in high-Tc superconductors, epitaxial Tl2Ba2CaCu2O8 thin films on LaAlO3 and their microwave device properties, the performance of stripline resonators using sputtered YBCO films, and a coplanar waveguide microwave filter of YBa2Cu3O7. Attention is also given to the performance characteristics of Y-Ba-Cu-O microwave superconducting detectors, high-Tc bolometer developments for planetary missions, infrared detectors from YBaCuO thin films, high-temperature superconductor junction technology, and submillimeter receiver components using superconducting tunnel junctions. (For individual items see A93-27244 to A93-27248)

Long-wave, infrared laser-induced breakdown (LIBS) spectroscopy emissions from energetic materials.

Science.gov (United States)

Yang, Clayton S-C; Brown, Ei E; Hommerich, Uwe; Jin, Feng; Trivedi, Sudhir B; Samuels, Alan C; Snyder, A Peter

2012-12-01

Laser-induced breakdown spectroscopy (LIBS) has shown great promise for applications in chemical, biological, and explosives sensing and has significant potential for real-time standoff detection and analysis. In this study, LIBS emissions were obtained in the mid-infrared (MIR) and long-wave infrared (LWIR) spectral regions for potential applications in explosive material sensing. The IR spectroscopy region revealed vibrational and rotational signatures of functional groups in molecules and fragments thereof. The silicon-based detector for conventional ultraviolet-visible LIBS operations was replaced with a mercury-cadmium-telluride detector for MIR-LWIR spectral detection. The IR spectral signature region between 4 and 12 μm was mined for the appearance of MIR and LWIR-LIBS emissions directly indicative of oxygenated breakdown products as well as dissociated, and/or recombined sample molecular fragments. Distinct LWIR-LIBS emission signatures from dissociated-recombination sample molecular fragments between 4 and 12 μm are observed for the first time.

Infrared detectors and focal plane arrays II; Proceedings of the Meeting, Orlando, FL, Apr. 23, 24, 1992