WorldWideScience

Sample records for induced ge segregation

  1. Weak-beam electron microscopy of radiation-induced segregation

    Saka, H.

    1983-01-01

    The segregation of solute atoms to dislocations during irradiation by 1 MeV electrons in a HVEM was studied by measuring the dissociation width of extended dislocations in Cu-5.1 at.%Si, Cu-5.3 at.%Ge, Ag-9.4 at.% In and Ag-9.6 at.%Al alloys. 'Weak-beam' electron microscopy was used. In Cu-Si (oversized solute), Cu-Ge (oversize) and Ag-Al (undersize), solute enrichment was observed near dislocations, while in Ag-In (oversize) solute depletion was observed. The results are discussed in terms of current mechanisms for radiation-induced segregation. (author)

  2. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  3. Step-driven surface segregation and ordering during Si-Ge MBE growth

    Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

    1992-06-01

    An important role of type S B step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth

  4. Magnetic characteristics and nanostructures of FePt granular films with GeO2 segregant

    Ono, Takuya; Moriya, Tomohiro; Hatayama, Masatoshi; Tsumura, Kaoru; Kikuchi, Nobuaki; Okamoto, Satoshi; Kitakami, Osamu; Shimatsu, Takehito

    2017-01-01

    To realize a granular film composed of L10-FePt grains with high uniaxial magnetic anisotropy energy, Ku, and segregants for energy-assisted magnetic recording, a FePt-GeO2/FePt-C stacked film was investigated in the engineering process. The FePt-GeO2/FePt-C stacked film fabricated at a substrate temperature of 450 °C realized uniaxial magnetic anisotropy, Kugrain , of about 2.5 × 107 erg/cm3, which is normalized by the volume fraction of FePt grains, and a granular structure with an averaged grain size of 7.7 nm. As the thickness of the FePt-GeO2 upper layer was increased to 9 nm, the Ku values were almost constant. That result differs absolutely from the thickness dependences of the other oxide segregant materials such as SiO2 and TiO2. Such differences on the oxide segregant are attributed to their chemical bond. The strong covalent bond of GeO2 is expected to result in high Ku of the FePt-GeO2/FePt-C stacked films.

  5. Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

    Kim, H.; Greene, J.E. [Materials Science Department, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

    1999-03-01

    Ultrahigh B-doped Ge(001) layers, with concentrations C{sub B} up to 8{times}10{sup 21} cm{sup {minus}3}, were grown by gas-source molecular beam epitaxy from Ge{sub 2}H{sub 6} and B{sub 2}H{sub 6} at temperatures T{sub s}=325{degree}C (in the surface-reaction-limited regime) and 600{degree}C (in the flux-limited regime). The samples were quenched, D site exchanged for H, and D{sub 2} temperature-programed desorption (TPD) used to determine B coverages {theta}{sub B} as a function of C{sub B} and T{sub s} by comparison with B-adsorbed Ge(001) reference samples with known {theta}{sub B} values. During Ge(001):B film growth, strong surface B segregation to the second layer was observed with surface-to-bulk B concentration ratios ranging up to 6000. The TPD spectra exhibited {alpha}{sub 2} and {alpha}{sub 1} peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced {alpha}{sub 2}{sup {asterisk}} and {alpha}{sub 1}{sup {asterisk}} peaks associated with deuterium desorption from Ge{sup {asterisk}} surface atoms with B backbonds. Increasing {theta}{sub B} expanded the area under {alpha}{sub 2}{sup {asterisk}} and {alpha}{sub 1}{sup {asterisk}} at the expense of {alpha}{sub 2} and {alpha}{sub 1} and decreased the total D coverage {theta}{sub D}. The TPD results were used to determine the B segregation enthalpy, {minus}0.64 eV, and to explain and model the effects of high B coverages on Ge(001) growth kinetics. At T{sub s}=325{degree}C, where B segregation is kinetically hindered, film deposition rates R{sub Ge} are not a strong function of C{sub B}, exhibiting only a small decrease at C{sub B}{approx_gt}5{times}10{sup 18} cm{sup {minus}3}. However, at T{sub s}=600{degree}C, R{sub Ge} decreases by up to 40{percent} with increasing C{sub B}{approx_gt}1{times}10{sup 18} cm{sup {minus}3}. This is due primarily to the combination of B-induced Ge dimer vacancies and the deactivation of surface dangling bonds caused by charge transfer

  6. Radiation-induced segregation in model alloys

    Ezawa, T.; Wakai, E.; Oshima, R.

    2000-12-01

    The dependence of the size factor of solutes on radiation-induced segregation (RIS) was studied. Ni-Si, Ni-Co, Ni-Cu, Ni-Mn, Ni-Pd, and Ni-Nb binary solid solution alloys were irradiated with electrons in a high voltage electron microscope at the same irradiation conditions. A focused beam and a grain boundary were utilized to generate a flow of point defects to cause RIS. From the concentration profile obtained by an energy dispersive X-ray analysis, the amount of RIS was calculated. The amount of RIS decreased as the size of the solute increased up to about 10%. However, as the size increased further, the amount of RIS increased. This result shows that RIS is not simply determined by the size effect rule.

  7. Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

    Nakajima, K.; Hosaka, N.; Hattori, T.; Kimura, K.

    2002-01-01

    The Si/Ge/Si(0 0 1) multilayer with about 1 ML Ge layer is fabricated by evaporating Si overlayer on a Ge/Si(0 0 1) surface at 20-300 deg. C. The depth profile of the Ge atoms is observed by high-resolution Rutherford backscattering spectroscopy to investigate the possibility of Ge delta doping in Si. The observed profile of the Ge atoms spreads over several atomic layers even at 20 deg. C and a significant amount of Ge is located in the surface layer at higher temperatures. The results at 20-150 deg. C are well explained with two-layer model for surface segregation of the Ge atoms and the segregation rates are estimated. The activation energy for surface segregation of Ge atoms in amorphous Si is evaluated to be 0.035 eV, which is much smaller than the value reported for Si deposition at 500 deg. C. The small activation energy suggests that local heating during the Si deposition is dominant at low temperature

  8. Monte Carlo simulations of adsorption-induced segregation

    Christoffersen, Ebbe; Stoltze, Per; Nørskov, Jens Kehlet

    2002-01-01

    Through the use of Monte Carlo simulations we study the effect of adsorption-induced segregation. From the bulk composition, degree of dispersion and the partial pressure of the gas phase species we calculate the surface composition of bimetallic alloys. We show that both segregation and adsorption...

  9. Radiation induced phosphorus segregation in austenitic and ferritic alloys

    Brimhall, J.L.; Baer, D.R.; Jones, R.H.

    1984-01-01

    The radiation induced surface segregation (RIS) of phosphorus in stainless steel attained a maximum at a dose of 0.8 dpa then decreased continually with dose. This decrease in the surface segregation of phosphorus at high dose levels has been attributed to removal of the phosphorus layer by ion sputtering. Phosphorus is not replenished since essentially all of the phosphorus within the irradiation zone has been segregated to the surface. Sputter removal can explain the previously reported absence of phosphorus segregation in ferritic alloys irradiated at high dosessup(1,2) (>1 dpa) since irradiation of ferritic alloys to low doses has shown measurable RIS. This sputtering phenomenon places an inherent limitation to the heavy ion irradiation technique for the study of surface segregation of impurity elements. The magnitude of the segregation in ferritics is still much less than in stainless steel which can be related to the low damage accumulation in these alloys. (orig.)

  10. Flow Induced segregation in full scale castings with SCC

    Thrane, Lars Nyholm; Stang, Henrik; Geiker, Mette Rica

    2007-01-01

    induced segregation is a major risk during casting and it is not yet clear how this phenomenon should be modelled. In this paper testing and numerical simulations of full-scale wall castings are compared. Two different SCCs and three different filling methods were applied resulting in different flow...... patterns during form filling. Results show that the flow patterns have a major influence on the risk of flow induced segregation and the surface finish of the hardened concrete. A hypothesis for the mechanism of flow induced segregation is put forth....

  11. Segregation effect of radiation induced crosslinking of HDPE: morphology change

    Deng Pengyang; Zhong Xiaoguang

    2000-01-01

    Scanning Electronic Microscopy has been used to study morphology of pure gel; sol-gel blend and sol-gel segregation samples of radiation induced crosslinking of HDPE. The results show that the morphology of segregation sample is the same as that of pure gel and different from that of sol-gel blend. This kind of morphology change proves that the sol-gel blend have occurred a liquid---solid phase segregation in the melting state. The liquid phase (sol) will naturally immersed in the network of the gel. (author)

  12. Radiation-induced segregation in Cu-Au alloys

    Hashimoto, T.; Rehn, L.E.; Okamoto, P.R.

    1987-01-01

    Radiation-induced segregation in a Cu-lat.% Au alloy was investigated using in-situ Rutherford backscattering spectrometry. Irradiation with 1.8-MeV helium produced nonequilibrium gold atom depletion in the near surface region. The amount of segregation was measured as a function of dose, dose rate, and temperature. Segregation was observed in the temperature range between about 300 and 500 0 C. For a calculated dose rate of 3.9 x 10/sup -5/ dpa/s, the radiation-induced segregation rate peaked near 400 0 C. Theoretical analysis based on the Johnson-Lam model predicted that the amount of segregation would be directly proportional to dose at the early stage of irradiation, would deviate from linearity with a continuously decreasing slope of intermediate doses, and finally approach a constant value after high doses. The analysis also predicted that the segregation rate would vary as the - 1/4th power of the dose rate at constant dose in the low temperature region. These predictions were all verified experimentally. A procedure for extracting relative defect production efficiencies from similar measurements is discussed

  13. Radiation-induced segregation in binary and ternary alloys

    Okamoto, P.R.; Rehn, L.E.

    1979-01-01

    A review is given of our current knowledge of radiation-induced segregation of major and minor elements in simple binary and ternary alloys as derived from experimental techniques such as Auger electron spectroscopy, secondary-ion mass spectroscopy, ion-backscattering, infrared emissivity measurements and transmission electron microscopy. Measurements of the temperature, dose and dose-rate dependences as well as of the effects of such materials variables as solute solubility, solute misfit and initial solute concentration has proved particularly valuable in understanding the mechanisms of segregation. The interpretation of these data in terms of current theoretical models which link solute segregation behavior to defect-solute binding interactions and/or to the relative diffusion rates of solute and solvent atoms the interstitial and vacancy migration mechanisms has, in general, been fairly successful and has provided considerable insight into the highly interrelated phenomena of solute-defect trapping, solute segregation, phase stability and void swelling. Specific examples in selected fcc, bcc and hcp alloy systems are discussed with particular emphasis given to the effects of radiation-induced segregation on the phase stability of single-phase and two-phase binary alloys and simple Fe-Cr-Ni alloys. (Auth.)

  14. Kinetics of radiation-induced segregation in ternary alloys

    Lam, N.O.; Kumar, A.; Wiedersich, H.

    1982-01-01

    Model calculations of radiation-induced segregation in ternary alloys have been performed, using a simple theory. The theoretical model describes the coupling between the fluxes of radiation-induced defects and alloying elements in an alloy A-B-C by partitioning the defect fluxes into those occurring via A-, B-, and C-atoms, and the atom fluxes into those taking place via vacancies and interstitials. The defect and atom fluxes can be expressed in terms of concentrations and concentration gradients of all the species present. With reasonable simplifications, the radiation-induced segregation problem can be cast into a system of four coupled partial-differential equations, which can be solved numerically for appropriate initial and boundary conditions. Model calculations have been performed for ternary solid solutions intended to be representative of Fe-Cr-Ni and Ni-Al-Si alloys under various irradiation conditions. The dependence of segregation on both the alloy properties and the irradiation variables, e.g., temperature and displacement rate, was calculated. The sample calculations are in good qualitative agreement with the general trends of radiation-induced segregation observed experimentally

  15. Irradiation-induced segregation in multi-component alloys

    Chen, I.W.

    1983-01-01

    A unified analysis of irradiation-induced segregation in multi-component alloys is developed using the formulation of irreversible thermodynamics. Three distinct mechanisms for segregation, namely the inverse Kirkendall effect, the vacancy-wind effect, and the solute drag of interstitials, are identified. In particular, the inverse Kirkendall effect due to interstitials arises only if a solute-interstitial interaction or a mutual conversion among interstitials via lattice atom intermediaries operates simultaneously. In the limit of fast conversion a para-equilibrium state may be reached between interstitials and lattice atoms, and the interstitial mechanism becomes formally analogous to the vacancy mechanism. Although the past treatment of rate phenomena in this field was apparently limited to the latter case, the importance of the consideration of separate chemical potentials for interstitials of different species, in segregation and other irradiation effects, is emphasized. (orig.)

  16. Radiation-induced grain boundary segregation in austenitic stainless steels

    Bruemmer, S.M.; Charlot, L.A.; Vetrano, J.S.; Simonen, E.P.

    1994-11-01

    Radiation-induced segregation (RIS) to grain boundaries in Fe-Ni-Cr-Si stainless alloys has been measured as a function of irradiation temperature and dose. Heavy-ion irradiation was used to produce damage levels from 1 to 20 displacements per atom (dpa) at temperatures from 175 to 550 degrees C. Measured Fe, Ni, and Cr segregation increased sharply with irradiation dose (from G to 5 dpa) and temperature (from 175 to about 350 degrees C). However, grain boundary concentrations did not change significantly as dose or temperatures were further increased. Although interfacial compositions were similar, the width of radiation-induced enrichment or depletion profiles increased consistently with increasing dose or temperature. Impurity segregation (Si and P) was also measured, but only Si enrichment appeared to be radiation-induced. Grain boundary Si peaked at levels approaching 10 at% after irradiation doses to 10 dpa at an intermediate temperature of 325 degrees C. No evidence of grain boundary silicide precipitation was detected after irradiation at any temperature. Equilibrium segregation of P was measured in the high-P alloys, but interfacial concentration did not increase with irradiation exposure. Comparisons to reported RIS in neutron-irradiated stainless steels revealed similar grain boundary compositional changes for both major alloying and impurity elements

  17. Radiation induced segregation and point defects in binary copper alloys

    Monteiro, W.A.

    1984-01-01

    Considerable progress, both theoretical and experimental, has been made in establishing and understanding the influence of factors such as temperature, time, displacement rate dependence and the effect of initial solute misfit on radiation induced solute diffusion and segregation. During irradiation, the composition of the alloy changes locally, due to defect flux driven non-equilibrium segregation near sinks such as voids, external surfaces and grain boundaries. This change in composition could influence properties and phenomena such as ductility, corrosion resistance, stress corrosion cracking, sputtering and blistering of materials used in thermo-nuclear reactors. In this work, the effect of 1 MeV electron irradiation on the initiation and development of segregation and defect diffusion in binary copper alloys has been studied in situ, with the aid of a high voltage electron microscope. The binary copper alloys had Be, Pt and Sn as alloying elements which had atomic radii less than, similar and greater than that of copper, respectively. It has been observed that in a wide irradiation temperature range, stabilization and growth of dislocation loops took place in Cu-Sn and Cu-Pt alloys. Whereas in the Cu-Be alloy, radiation induced precipitates formed and transformed to the stable γ phase. (Author) [pt

  18. Radiation-induced segregation and phase stability in ferritic-martensitic alloy T 91

    Wharry, Janelle P.; Jiao Zhijie; Shankar, Vani [University of Michigan, 2355 Bonisteel Blvd, Ann Arbor, MI 48109-2104 (United States); Busby, Jeremy T. [Oak Ridge National Laboratory, 1 Bethel Valley Rd, Oak Ridge, TN 37831 (United States); Was, Gary S., E-mail: gsw@umich.edu [University of Michigan, 2355 Bonisteel Blvd, Ann Arbor, MI 48109-2104 (United States)

    2011-10-01

    Radiation-induced segregation in ferritic-martensitic alloy T 91 was studied to understand the behavior of solutes as a function of dose and temperature. Irradiations were conducted using 2 MeV protons to doses of 1, 3, 7 and 10 dpa at 400 deg. C. Radiation-induced segregation at prior austenite grain boundaries was measured, and various features of the irradiated microstructure were characterized, including grain boundary carbide coverage, the dislocation microstructure, radiation-induced precipitation and irradiation hardening. Results showed that Cr, Ni and Si segregate to prior austenite grain boundaries at low dose, but segregation ceases and redistribution occurs above 3 dpa. Grain boundary carbide coverage mirrors radiation-induced segregation. Irradiation induces formation of Ni-Si-Mn and Cu-rich precipitates that account for the majority of irradiation hardening. Radiation-induced segregation behavior is likely linked to the evolution of the precipitate and dislocation microstructures.

  19. Irradiation induced surface segregation in concentrated alloys: a contribution

    Grandjean, Y.

    1996-01-01

    A new computer modelization of irradiation induced surface segregation is presented together with some experimental determinations in binary and ternary alloys. The model we propose handles the alloy thermodynamics and kinetics at the same level of sophistication. Diffusion is described at the atomistic level and proceeds vis the jumps of point defects (vacancies, dumb-bell interstitials): the various jump frequencies depend on the local composition in a manner consistent with the thermodynamics of the alloy. For application to specific alloys, we have chosen the simplest statistical approximation: pair interactions in the Bragg Williams approximation. For a system which exhibits the thermodynamics and kinetics features of Ni-Cu alloys, the model generates the behaviour parameters (flux and temperature) and of alloy composition. Quantitative agreement with the published experimental results (two compositions, three temperatures) is obtained with a single set of parameters. Modelling austenitic steels used in nuclear industry requires taking into account the contribution of dumbbells to mass transport. The effects of this latter contribution are studied on a model of Ni-Fe. Interstitial trapping on dilute impurities is shown to delay or even suppress the irradiation induced segregation. Such an effect is indeed observed in the experiments we report on Fe 50 Ni 50 and Fe 49 Ni 50 Hf 1 alloys. (author)

  20. Development of Computational Tools for Predicting Thermal- and Radiation-Induced Solute Segregation at Grain Boundaries in Fe-based Alloys

    Yang, Ying [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-09-30

    Radiation-induced segregation (RIS) has been frequently reported in structural materials such as austenitic, ferritic, and ferritic-martensitic stainless steels (SS) that have been widely used in light water reactors (LWRs). RIS has been linked to secondary degradation effects in SS including irradiation-induced stress corrosion cracking (IASCC). Earlier studies on thermal segregation in Fe-based alloys found that metalloids elements such as P, S, Si, Ge, Sn, etc., embrittle the materials when enrichment was observed at grain boundaries (GBs). RIS of Fe-Cr-Ni-based austenitic steels has been modeled in the U.S. 2015 fiscal year (FY2015), which identified the pre-enrichment due to thermal segregation can have an important role on the subsequent RIS. The goal of this work is to develop thermal segregation models for alloying elements in steels for future integration with RIS modeling.

  1. Novel features of radiation-induced segregation and radiation-induced precipitation in austenitic stainless steels

    Jiao, Z., E-mail: zjiao@umich.edu [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Was, G.S. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

    2011-02-15

    Three stainless steel alloys, high-purity 304 (HP304), high-purity 304 with high Si (HP304 + Si) and commercial purity 304 (CP304), were irradiated with 2 MeV protons to a dose of 5 dpa at 360 deg. C and subsequently examined using atom probe tomography (APT) and scanning transmission electron microscopy-energy dispersive X-ray spectrometry (STEM-EDS). Several novel features of radiation-induced segregation and radiation-induced precipitation were observed. There is a significant variation in the composition of enriched and depleted elements in the grain boundary plane and along the dislocation loop core. Boron segregation to the grain boundary prior to irradiation is not affected by the irradiation. Phosphorus segregation is enhanced by irradiation. Carbon depletes at the grain boundary and may be affected by co-segregation with Cr. APT and STEM-EDS measurements are in excellent agreement for almost all the elements studied. The segregation behavior of elements at dislocations mirrors that at the grain boundary, but at a lower magnitude, except for Si. Ni/Si-rich clusters formed in irradiated HP304 + Si and CP304 are probably the precursors of {gamma}' or other Si- and Ni-rich phases. Copper depletion was observed at both the grain boundary and the dislocation loops. Regions adjacent to the depleted zones were sites for Cu cluster formation, which were also spatially correlated with Ni/Si-rich clusters.

  2. Radiation-induced segregation behavior in random and ordered face-centered cubic materials

    Bui, T.X.; Robertson, I.M.; Klatt, J.L.; Averback, R.S.; Kirk, M.A.

    1993-01-01

    Radiation-induced segregation has been studied in random solid solution alloys Ni-10%Al and Ni-6%Si, and in the ordered (L1 2 structure) intermetallics Ni 3 Si and Ni 3 Al. These materials were irradiated with 2 MeV He + ions at a temperature between 0.45 and 0.55T m and at an ion dose rate of approximately 1x10 -4 dpa per second. Subsequent Auger Electron Spectroscopy analysis showed that silicon segregated to the surface in the Ni-6% Si and Ni 3 Si alloys, and aluminum segregated away from the near surface region in the Ni-10% Al alloy. The Ni 3 Al samples exhibited no detectable segregation with respect to depth from the sample surface. The mechanisms that may give rise to this resistance to radiation induced segregation will be examined in terms of the mobility of the alloying constituents, ordering energies and atomic sizes. (orig.)

  3. Influence of the primary recoil spectrum on radiation-induced segregation in nickel-silicon

    Averback, R.S.; Rehn, L.E.; Wiedersich, H.; Cook, R.E.

    1980-01-01

    Radiation induced segregation in Ni-12.7% Si has been examined for 1.5 MeV He, 2.0 MeV Li, and 2.75 MeV Kr irradiations. A method to simultaneously damage and analyze the specimens during light-ion irradiation is described. The amount of segregation was determined by using Rutherford backscattering spectrometry to measure the thickness of the γ' layer which develops at the surface. Substantially less segregation of Si to the surface is observed for the Kr irradiation than for the light-ion irradiations at 520 0 C

  4. Gibbsian and radiation-induced segregation in Cu--Li and Al--Li alloys

    Gruen, D.M.; Krauss, A.R.; Susman, S.; Venugopalan, M.; Ron, M.

    1983-01-01

    Previous experiments on segregation in dilute alloys of lithium in aluminum have demonstrated rapid enrichment of lithium in the uppermost monolayer, as well as a slower buildup in the subsurface region as a result of radiation-induced segregation effects during sputtering. Surface and subsurface enrichment of lithium in copper and aluminum alloys has been observed by secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), and x-ray photoemission spectroscopy (XPS). The activation energies for lithium diffusion in Cu and Al have been measured and segregation kinetics are compared for dilute alloys of Li in Cu and Al, and a high lithium content copper alloy. The results are interpreted in terms of both Gibbsian and radiation-induced segregation effects

  5. Ion induced segregation in gold nanostructured thin films on silicon

    Ghatak, J.; Satyam, P.V.

    2008-01-01

    We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au 2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6 x 10 13 , 1 x 10 14 and 5 x 10 14 ions cm -2 at a high beam flux of 6.3 x 10 12 ions cm -2 s -1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6 x 10 13 ions cm -2 ) transport has been found to be associated with the formation of gold silicide (Au 5 Si 2 ). At a high fluence value of 5 x 10 14 ions cm -2 , disassociation of gold silicide and out-diffusion lead to the segregation of gold to defect - rich surface and interface regions.

  6. Dose dependence of radiation-induced segregation in Ni-1 at% Si

    Rehn, L.E.; Okamoto, P.R.; Wiedersich, H.

    1979-01-01

    Measurements have been made of alloy composition as a function of depth from the external surface in Ni-1 at% Si specimens after irradiation with 3-MeV 58 Ni + ions to several different doses at nominal temperatures of 525 and 600 0 C. Very rapid segregation of Si toward the external surface ocurred during irradiation. Surface concentrations of Si in excess of the 10 at% solubility limit were found at both irradiation temperatures after a dose of only approximately 0.05 dpa. The rate of segregation decreased markedly in the dose range from approximately 1-10 dpa. Qualitative agreement was found between the experimental observations and calculations made using a modified Johnson-Lam segregation mode (1976). The present investigation suggests that radiation-induced segregation may significantly alter the mechanical behavior of irradiated alloys long before the onset of void swelling. (Auth.)

  7. UV-induced mitotic co-segregation of genetic markers in Candida albicans: Evidence for linkage

    Crandall, M.

    1983-01-01

    Parasexual genetic studies of the medically important yeast Candida albicans were performed using the method of UV-induced mitotic segregation. UV-irradiation of the Hoffmann-La Roche type culture of C. albicans yielded a limited spectrum of mutants at a relatively high fequency. This observation suggested natural heterozygosity. Canavanine-sensitive (CanS) segregants were induced at a frequency of 7.6 . 10 -3 . Double mutants that were both CanS and methionine (Met - ) auxotrophs were induced at a frequency of 7.4 . 10 -3 . The single Met - segregant class was missing indicating linkage. UV-induced CanS or Met - CanS segregants occurred occasionally in twin-sectored colonies. Analyses of the sectors as well as the observed and missing classes of segregants indicated that genes met and can are linked in the cis configuration. The proposed gene order is: centromere - met - can. Thus, it is concluded that the Hoffmann-La Roche strain of C. albicans is naturally heterozygous at two linked loci. These findings are consistent with diploidy. (orig.)

  8. Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge{sub 1−x}Sn{sub x} layer on Ge(0 0 1) substrate

    Wang, Wei; Li, Lingzi; Zhou, Qian [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Pan, Jisheng; Zhang, Zheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore); Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-12-01

    Highlights: • Ge{sub 0.915}Sn{sub 0.085} was grown on Ge (0 0 1) by molecular beam epitaxy (MBE). • The impact of annealing on surface morphology and Sn composition was studied. • Sn is found to preferentially segregate towards the surface at 200 °C. • A Sn-rich layer would form on the Ge{sub 1−x}Sn{sub x} surface after annealing at 300 °C. • Sn desorption and formation of Sn-rich islands were found when T > 300 °C. - Abstract: Annealing of strained Ge{sub 1−x}Sn{sub x} epitaxial layers grown on Ge(0 0 1) substrate results in two distinctive regimes marked by changes in composition and morphology. Annealing at low temperatures (200–300 °C or Regime-I) leads to surface enrichment of Sn due to Sn segregation, as indicated by X-ray photoelectron spectroscopy (XPS) results, while the bulk Sn composition (from X-ray diffraction (XRD)) and the surface morphology (from atomic force microscopy (AFM)) do not show discernible changes as compared to the as-grown sample. Annealing at temperatures ranging from 300 °C to 500 °C (Regime-II) leads to a decrease in the surface Sn composition. While the Ge{sub 1−x}Sn{sub x} layer remains fully strained, a reduction in the bulk Sn composition is observed when the annealing temperature reaches 500 °C. At this stage, surface roughening also occurs with formation of 3D islands. The island size increases as the annealing temperature is raised to 600 °C. The decrease in the Sn composition at the surface and in the bulk in Regime-II is attributed to additional thermally activated kinetic processes associated with Sn desorption and formation of Sn-rich 3D islands on the surface.

  9. Radiation-induced segregation and void formation in C+ ion-irradiated vanadium-carbon alloys

    Takeyama, T.; Ohnuki, S.; Takahashi, H.; Sato, Y.; Mochizuki, S.

    1982-01-01

    To clarify the effect of interstitial elements on radiation-induced segregation and void formation in V and V-C alloys irradiated by 200 keV C + ions to a dose of 48 dpa at 973 K, the microstructural observation and the measurement of C segregation to the surfaces were carried out by TEM and XPS. Voids, dislocations and precipitates were produced in all of the specimens during irradiation. The addition of C in V led to a reduction of void size and to increase in void number density, consequently the void swelling was suppressed strongly. Radiation-induced segregation of C was observed clearly on and near the irradiated surfaces of V-C alloys and as a result of the enrichment of C atoms, carbides precipitated on the surfaces. It is the first evidence of the radiation-induced segregation of interstitial elements on the surfaces. Also, quasi-carbides were observed on the (210) habit plaints near large voids and dislocations in V. The phenomena show that C atoms, which was insolved and/or implanted, interact strongly with vacancies rather than self-interstitial atoms and migrate with vacancies toward defect sinks, such as surfaces, voids, and dislocations. The segregated zones of C reduced the sink efficiency of the defects, and showed the effect of the suppression on void in V-C alloys. (author)

  10. Drift forces on vacancies and interstitials in alloys with radiation-induced segregation

    Wolfer, W.G.

    1983-01-01

    Radiation-induced segregation in alloys leads to compositional gradients around point defect sinks such as voids and dislocations. These compositional gradients in turn affect the drift forces on both interstitials and vacancies and thereby modify the bias. Linear irreversible thermodynamics is employed to derive the total drift force on interstitials and vacancies in substitutional binary alloys. The obtained results are evaluated for binary Fe-Ni alloys. It is shown that radiation-induced segregation produces new drift forces which can be of the same order of magnitude as the stress-induced drift force produced by edge dislocations in an alloy with uniform composition. Hence, segregation results in a significant modification of the bias for void nucleation and swelling. The additional drift forces on interstitials and vacancies are due to the compositional dependence of the formation and migration energies; due to the dependence of the point defect's strain energy on the local elastic properties; due to a coherency strain field caused by lattice parameter variations; and finally due to the Kirkendall force produced by the difference in tracer mobilities. Estimates of these forces given for Fe-Ni alloys indicate that the Kirkendall force is small compared to the other segregation-induced forces on interstitials. In contrast, the Kirkendall force seems to be the dominant one for vacancies. (orig.)

  11. Origin of intergranular embrittlement of Al alloys induced by Na and Ca segregation: Grain boundary weakening

    Lu Guanghong; Zhang Ying; Deng Shenghua; Wang Tianmin; Kohyama, Masanori; Yamamoto, Ryoichi; Liu Feng; Horikawa, Keitaro; Kanno, Motohiro

    2006-01-01

    Using a first-principles computational tensile test, we show that the ideal tensile strength of an Al grain boundary (GB) is reduced with both Na and Ca GB segregation. We demonstrate that the fracture occurs in the GB interface, dominated by the break of the interfacial bonds. Experimentally, we further show that the presence of Na or Ca impurity, which causes intergranular fracture, reduces the ultimate tensile strength when embrittlement occurs. These results suggest that the Na/Ca-induced intergranular embrittlement of an Al alloy originates mainly from the GB weakening due to the Na/Ca segregation

  12. Radiation-induced segregation in materials: Implications for accelerator-driven neutron source applications

    Faulkner, R.B.; Song, S. [Loughborough Univ. of Technology (United Kingdom)

    1995-10-01

    This paper reviews exisiting models for radiation-induced segregation to microstrucural interfaces and surfaces. It indicates how the models have been successfully used in the past in neutron irradiation situations and how they may be modified to account for accelerator-driven RIS. The predictions of the models suggest that any impurity with large misfit will suffer RIS and that the effect is heightened as radiation damage increases. The paper suggests methods to utilise the RIS in transmutation technology by dynamically segregating long life nuclides to preferred sites in the microstructure so that subsequent transmutations occur with maximum efficiency.

  13. Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In{sub 2}O{sub 3} thin films

    Hoyer, Karoline L.; Hubmann, Andreas H.; Klein, Andreas [Surface Science Division, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

    2017-02-15

    Ge-doped In{sub 2}O{sub 3} thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to 8.35 x 10{sup 3} S cm{sup -1} and carrier mobilities of up to 57 cm{sup 2} V{sup -1}s{sup -1} are observed. The surface Ge concentration is enhanced by a factor of 2-3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped In{sub 2}O{sub 3}. Ge-doped In{sub 2}O{sub 3} films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a GeO{sub 2} surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Mechanistic issues for modeling radiation-induced segregation

    Simonen, E.P.; Bruemmer, S.M.

    1993-03-01

    Model calculations of radiation-induced chromium depletion and radiation-induced nickel enrichment at grain boundaries are compared to measured depletions and enrichments. The model is calibrated to fit chromium depletion in commercial purity 304 stainless steel irradiated in boiling water reactor (BWR) environments. Predicted chromium depletion profiles and the dose dependence of chromium concentration at grain boundaries are in accord with measured trends. Evaluation of chromium and nickel profiles in three neutron, and two ion, irradiation environments reveal significant inconsistencies between measurements and predictions

  15. Effect of microstructure on radiation induced segregation and depletion in ion irradiated SS316 steel

    Jin, Hyung Ha; Kwon, Sang Chul; Kwon, Jun Hyun

    2011-01-01

    Irradiation assisted stress corrosion cracking (IASCC), void swelling and irradiation induced hardening are caused by change of characteristics of material by neutron irradiation, stress state of material and environmental situation. It has been known that chemical compositions varies at grain boundary (GB) significantly with fluence level and the depletion of Cr element at GB has been considered as one of important factors causing material degradation, especially, IASCC in austenitic stainless steel. However, experimental results of IASCC under PWR condition were directly not connected with Cr depletion phenomenon by neutron irradiation. Because the mechanism of IASCC under PWR has not yet been clearly understood in spite of many energetic researches, fundamental researches about radiation induced segregation and depletion in irradiated austenitic stainless steels have been attracted again. In this work, an effect of residual microstructure on radiation induced segregation and depletion of alloy elements at GB was investigated in ion irradiated SS316 steel using transmission electron microscope (TEM) with energy dispersive spectrometer (EDS)

  16. Measurement and modeling of radiation-induced grain boundary grain boundary segregation in stainless steels

    Bruemmer, S.M.; Charlot, L.A.; Simonen, E.P.

    1995-08-01

    Grain boundary radiation-induced segregation (RIS) in Fe-Ni-Cr stainless alloys has been measured and modelled as a function of irradiation temperature and dose. Heavy-ion irradiation was used to produce damage levels from 1 to 20 displacements per atom (dpa) at temperatures from 175 to 550 degrees C. Measured Fe, Ni, and Cr segregation increased sharply with irradiation dose (from 0 to 5 dpa) and temperature (from 175 to about 350 degrees C). However, grain boundary concentrations did not change significantly as dose or temperatures were further increased. Impurity segregation (Si and P) was also measured, but only Si enrichment appeared to be radiation-induced. Grain boundary Si levels peaked at an intermediate temperature of ∼325 degrees C reaching levels of ∼8 at. %. Equilibrium segregation of P was measured in the high-P alloys, but interfacial concentration did not increase with irradiation exposure. Examination of reported RIS in neutron-irradiated stainless steels revealed similar effects of irradiation dose on grain boundary compositional changes for both major alloying and impurity element's. The Inverse Kirkendall model accurately predicted major alloying element RIS in ion- and neutron-irradiated alloys over the wide range of temperature and dose conditions. In addition, preliminary calculations indicate that the Johnson-Lam model can reasonably estimate grain boundary Si enrichment if back diffusion is enhanced

  17. Proton and temperature-induced competitive segregation of iron on surface and volume sinks of silica

    Shilobreeva, S.N.; Kashkarov, L.L.; Barabanenkov, M.Yu.; Pustovit, A.N.; Zinenko, V.I.; Agafonov, Yu.A.

    2007-01-01

    Experimental results are delivered on iron redistribution in silica for proton irradiation followed by thermal annealing. Iron ions are initially implanted into silica at room temperature. Proton irradiation is performed at different temperatures. It is demonstrated, in particular, that radiation-induced migration of iron is more efficient at low temperature. Iron surface segregation and capture of iron by sinks in silica subsurface region during thermal annealing are speculated in terms of diffusion-alternative-sinks problem

  18. Proton and temperature-induced competitive segregation of iron on surface and volume sinks of silica

    Shilobreeva, S.N. [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, ul. Kosygina 19, Moscow 117975 (Russian Federation); Kashkarov, L.L. [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, ul. Kosygina 19, Moscow 117975 (Russian Federation); Barabanenkov, M.Yu. [Institute of Microelectronics Technology and Superpure Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region (Russian Federation)]. E-mail: barab@ipmt-hpm.ac.ru; Pustovit, A.N. [Institute of Microelectronics Technology and Superpure Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region (Russian Federation); Zinenko, V.I. [Institute of Microelectronics Technology and Superpure Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region (Russian Federation); Agafonov, Yu.A. [Institute of Microelectronics Technology and Superpure Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region (Russian Federation)

    2007-03-15

    Experimental results are delivered on iron redistribution in silica for proton irradiation followed by thermal annealing. Iron ions are initially implanted into silica at room temperature. Proton irradiation is performed at different temperatures. It is demonstrated, in particular, that radiation-induced migration of iron is more efficient at low temperature. Iron surface segregation and capture of iron by sinks in silica subsurface region during thermal annealing are speculated in terms of diffusion-alternative-sinks problem.

  19. Segregation and diffusion of deffects induced by radiation in binary copper alloys

    Monteiro, W.A.

    1984-01-01

    Actually considerable theoretical and experimental progress has been made in establishing and in understanding the general feactures of the Radiation Induced Solute Difusion or Segregation such as its temperature, time and displacement rate dependence and the effects of some important materials factors such as the initial solute misfit. During irradiation, the local alloy compositions will change by defect flux driven, non-equilibrium segregation near sinks such as voids, external surfaces and grain boundaries and the compositional change are likely to influence a number of properties and phenomena important to Thermonuclear Reactors, as for example, Ductility, Corrosion, Stress, Corrosion Craking, Sputtering and Blistering. Our work is correlated with the 1 MeV electrons irradiations effects in Copper alloys where the alloying elements are Be, Pt, Sn. These three elements are undersized, similar and oversized relating the Copper atom radius, respectively. How starts and develops the Segregation Induced by Irradiation 'In Situ' with help of the High Voltage Electron Microscopy as technique. (Author) [pt

  20. The thermodynamic stability induced by solute co-segregation in nanocrystalline ternary alloys

    Liang, Tao; Chen, Zheng; Zhang, Jinyong; Zhang, Ping [China Univ. of Mining and Technology, Xuzhou (China). School of Mateial Science and Engineering; Yang, Xiaoqin [China Univ. of Mining and Technology, Xuzhou (China). School of Chemical Engineering and Technology

    2017-06-15

    The grain growth and thermodynamic stability induced by solute co-segregation in ternary alloys are presented. Grain growth behavior of the single-phase supersaturated grains prepared in Ni-Fe-Pb alloy melt at different undercoolings was investigated by performing isothermal annealings at T = 400 C-800 C. Combining the multicomponent Gibbs adsorption equation and Guttmann's grain boundary segregation model, an empirical relation for isothermal grain growth was derived. By application of the model to grain growth in Ni-Fe-Pb, Fe-Cr-Zr and Fe-Ni-Zr alloys, it was predicted that driving grain boundary energy to zero is possible in alloys due to the co-segregation induced by the interactive effect between the solutes Fe/Pb, Zr/Ni and Zr/Cr. A non-linear relationship rather than a simple linear relation between 1/D* (D* the metastable equilibrium grain size) and ln(T) was predicted due to the interactive effect.

  1. Effects of point defect trapping and solute segregation on irradiation-induced swelling and creep

    Mansur, L.K.

    1978-01-01

    The theory of irradiation swelling and creep, generalized to include impurity trapping of point defects and impurity-induced changes in sink efficiencies for point defects, is reviewed. The mathematical framework is developed and significant results are described. These include the relation between vacancy and interstitial trapping and the effectiveness of trapping as compared to segregation-induced changes in sink efficiencies in modifying void nucleation, void growth, and creep. Current understanding is critically assessed. Several areas requiring further development are identified. In particular those given special attention are the treatment of nondilute solutions and the consequences of current uncertainties in fundamental materials properties whose importance has been identified using the theory

  2. Radiation-induced segregation: A microchemical gauge to quantify fundamental defect parameters

    Simonen, E.P.; Bruemmer, S.M.

    1994-12-01

    Defect Kinetic are evaluated for austenitic stainless alloys by comparing model predictions to measured responses for radiation-induced grain boundary segregation. Heavy-ions, neutrons and proton irradiations having substantial statistical bases are examined. The combined modeling and measurement approach is shown to be useful for quantifying fundamental defect parameters. The mechanism evaluation indicates vacancy, migration energies of 1.15 eV or less and a vacancy formation energy at grain boundaries of 1.5 eV. Damage efficiencies of about 0.03 were established for heavy-ions and for light-water reactor neutrons. Inferred proton damage efficiencies were about 0.15. Segregation measured in an advanced gas-cooled reactor component was much greater than expected using the above parameters

  3. GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

    2016-07-11

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

  4. Effects of flexible substrate thickness on Al-induced crystallization of amorphous Ge thin films

    Oya, Naoki [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Toko, Kaoru, E-mail: toko@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, Noriyuki; Yoshizawa, Noriko [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan); Suemasu, Takashi [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2015-05-29

    Amorphous germanium (a-Ge) thin films were directly crystallized on flexible plastic substrates at 325 °C using Al-induced crystallization. The thickness of the plastic substrate strongly influenced the crystal quality of the resulting polycrystalline Ge layers. Using a thicker substrate lowered the stress on the a-Ge layer during annealing, which increased the grain size and fraction of (111)-oriented grains within the Ge layer. Employing a 125-μm-thick substrate led to 95% (111)-oriented Ge with grains having an average size of 100 μm. Transmission electron microscopy demonstrated that the Ge grains had a low-defect density. Production of high-quality Ge films on plastic substrates allows for the possibility for developing Ge-based electronic and optical devices on inexpensive flexible substrates. - Highlights: • Polycrystalline Ge thin films are directly formed on flexible plastic substrates. • Al-induced crystallization allows the low-temperature growth (325 °C) of amorphous Ge. • The substrate bending during annealing strongly influences the crystal quality of poly-Ge. • A thick substrate (125 μm) leads to 95% (111)-oriented Ge with grains 100 μm in size.

  5. Radiation-induced segregation on defect clusters in single-phase concentrated solid-solution alloys

    Lu, Chenyang; Yang, Taini; Jin, Ke; Gao, Ning; Xiu, Pengyuan; Zhang, Yanwen; Gao, Fei; Bei, Hongbin; Weber, William J.; Sun, Kai; Dong, Yan; Wang, Lumin

    2017-01-01

    A group of single-phase concentrated solid-solution alloys (SP-CSAs), including NiFe, NiCoFe, NiCoFeCr, as well as a high entropy alloy NiCoFeCrMn, was irradiated with 3 MeV Ni"2"+ ions at 773 K to a fluence of 5 × 10"1"6 ions/cm"2 for the study of radiation response with increasing compositional complexity. Advanced transmission electron microscopy (TEM) with electron energy loss spectroscopy (EELS) was used to characterize the dislocation loop distribution and radiation-induced segregation (RIS) on defect clusters in the SP-CSAs. The results show that a higher fraction of faulted loops exists in the more compositionally complex alloys, which indicate that increasing compositional complexity can extend the incubation period and delay loop growth. The RIS behaviors of each element in the SP-CSAs were observed as follows: Ni and Co tend to enrich, but Cr, Fe and Mn prefer to deplete near the defect clusters. RIS level can be significantly suppressed by increasing compositional complexity due to the sluggish atom diffusion. According to molecular static (MS) simulations, “disk” like segregations may form near the faulted dislocation loops in the SP-CSAs. Segregated elements tend to distribute around the whole faulted loop as a disk rather than only around the edge of the loop.

  6. Controllable irregular melting induced by atomic segregation in bimetallic clusters with fabricating different initial configurations

    Li Guojian; Liu Tie; Wang Qiang; Lue Xiao; Wang Kai; He Jicheng

    2010-01-01

    The melting process of Co, Co-Cu and Co-Ni clusters with different initial configurations is studied in molecular dynamics by a general embedded atom method. An irregular melting, at which energy decreases as the temperature increase near the melting point, is found in the onion-like Co-Cu-Co clusters, but not in the mixed Co-Cu and onion-like Co-Ni-Co clusters. From the analysis of atomic distributions and energy variation, the results indicate the irregular melting is induced by Cu atomic segregation. Furthermore, this melting can be controlled by doping hetero atoms with different surface energies and controlling their distributions.

  7. A phase field model for segregation and precipitation induced by irradiation in alloys

    Badillo, A.; Bellon, P.; Averback, R. S.

    2015-04-01

    A phase field model is introduced to model the evolution of multicomponent alloys under irradiation, including radiation-induced segregation and precipitation. The thermodynamic and kinetic components of this model are derived using a mean-field model. The mobility coefficient and the contribution of chemical heterogeneity to free energy are rescaled by the cell size used in the phase field model, yielding microstructural evolutions that are independent of the cell size. A new treatment is proposed for point defect clusters, using a mixed discrete-continuous approach to capture the stochastic character of defect cluster production in displacement cascades, while retaining the efficient modeling of the fate of these clusters using diffusion equations. The model is tested on unary and binary alloy systems using two-dimensional simulations. In a unary system, the evolution of point defects under irradiation is studied in the presence of defect clusters, either pre-existing ones or those created by irradiation, and compared with rate theory calculations. Binary alloys with zero and positive heats of mixing are then studied to investigate the effect of point defect clustering on radiation-induced segregation and precipitation in undersaturated solid solutions. Lastly, irradiation conditions and alloy parameters leading to irradiation-induced homogeneous precipitation are investigated. The results are discussed in the context of experimental results reported for Ni-Si and Al-Zn undersaturated solid solutions subjected to irradiation.

  8. A phase field model for segregation and precipitation induced by irradiation in alloys

    Badillo, A; Bellon, P; Averback, R S

    2015-01-01

    A phase field model is introduced to model the evolution of multicomponent alloys under irradiation, including radiation-induced segregation and precipitation. The thermodynamic and kinetic components of this model are derived using a mean-field model. The mobility coefficient and the contribution of chemical heterogeneity to free energy are rescaled by the cell size used in the phase field model, yielding microstructural evolutions that are independent of the cell size. A new treatment is proposed for point defect clusters, using a mixed discrete-continuous approach to capture the stochastic character of defect cluster production in displacement cascades, while retaining the efficient modeling of the fate of these clusters using diffusion equations. The model is tested on unary and binary alloy systems using two-dimensional simulations. In a unary system, the evolution of point defects under irradiation is studied in the presence of defect clusters, either pre-existing ones or those created by irradiation, and compared with rate theory calculations. Binary alloys with zero and positive heats of mixing are then studied to investigate the effect of point defect clustering on radiation-induced segregation and precipitation in undersaturated solid solutions. Lastly, irradiation conditions and alloy parameters leading to irradiation-induced homogeneous precipitation are investigated. The results are discussed in the context of experimental results reported for Ni–Si and Al–Zn undersaturated solid solutions subjected to irradiation. (paper)

  9. Pressure-induced antiferromagnetic superconductivity in CeNiGe3: A Ge73-NQR study under pressure

    Harada, A.; Kawasaki, S.; Mukuda, H.; Kitaoka, Y.; Thamizhavel, A.; Okuda, Y.; Settai, R.; Onuki, Y.; Itoh, K.M.; Haller, E.E.; Harima, H.

    2007-01-01

    We report on antiferromagnetic (AF) properties of pressure-induced superconductivity in CeNiGe 3 via the Ge73 nuclear-quadrupole-resonance (NQR) measurements under pressure (P). The NQR-spectrum measurements have revealed that the incommensurate antiferromagnetic ordering is robust against increasing P with the increase of ordered moment and ordering temperature. Nevertheless the measurements of nuclear spin-lattice relaxation rate (1/T 1 ) have pointed to the onset of superconductivity as a consequence of Ce-4f electrons delocalized by applying P. The emergence of superconductivity under the development of AF order suggests that a novel type of superconducting mechanism works in this compound

  10. Light and Electrically Induced Phase Segregation and Its Impact on the Stability of Quadruple Cation High Bandgap Perovskite Solar Cells.

    Duong, The; Mulmudi, Hemant Kumar; Wu, YiLiang; Fu, Xiao; Shen, Heping; Peng, Jun; Wu, Nandi; Nguyen, Hieu T; Macdonald, Daniel; Lockrey, Mark; White, Thomas P; Weber, Klaus; Catchpole, Kylie

    2017-08-16

    Perovskite material with a bandgap of 1.7-1.8 eV is highly desirable for the top cell in a tandem configuration with a lower bandgap bottom cell, such as a silicon cell. This can be achieved by alloying iodide and bromide anions, but light-induced phase-segregation phenomena are often observed in perovskite films of this kind, with implications for solar cell efficiency. Here, we investigate light-induced phase segregation inside quadruple-cation perovskite material in a complete cell structure and find that the magnitude of this phenomenon is dependent on the operating condition of the solar cell. Under short-circuit and even maximum power point conditions, phase segregation is found to be negligible compared to the magnitude of segregation under open-circuit conditions. In accordance with the finding, perovskite cells based on quadruple-cation perovskite with 1.73 eV bandgap retain 94% of the original efficiency after 12 h operation at the maximum power point, while the cell only retains 82% of the original efficiency after 12 h operation at the open-circuit condition. This result highlights the need to have standard methods including light/dark and bias condition for testing the stability of perovskite solar cells. Additionally, phase segregation is observed when the cell was forward biased at 1.2 V in the dark, which indicates that photoexcitation is not required to induce phase segregation.

  11. Influence of radiation-induced segregation on ductility of a nickel-silicon alloy

    Packan, N.H.; Schroeder, H.; Kesternich, W.

    1986-01-01

    Flat tensile specimens 60 μm thick of Ni-8 at. % Si were irradiated to bulk damage levels of 0.1 to 0.3 dpa with either 7 MeV protons or 28 MeV alpha particles at 750 K. The alpha bombarded specimens incurred 750 at. ppM He per 0.1 dpa in the course of their damage-generating irradiation. Radiation-induced silicon segregation gave rise to Ni 3 Si layers at internal and external surfaces. Postirradiation tensile tests conducted either at 300 K or 720 K revealed fully ductile (chisel-edged) transgranular fracture profiles. There were no significant differences between the proton-bombarded specimens and the unbombarded controls, both exhibiting >25% total elongations, while the alpha-bombarded specimens showed ductile fractures with somewhat lower (17 to 18%) elongation values probably due to hardening caused by small helium bubbles. Certain specimens that were preimplanted with 250 to 1000 at. ppM He at 970 K to encourage intergranular failure and expose grain boundaries did fail intergranularly. It is concluded that radiation-induced silicon segregation does not cause intrinsic embrittlement

  12. Radiation-induced segregation in light-ion bombarded Ni-8% Si

    Packan, N.H.; Heatherly, L.; Kesternich, W.; Schroeder, H.

    1986-01-01

    Tensile specimens 60 μm thick of Ni-8 at. % Si have been bombarded at 475 0 C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700 0 C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from external surfaces. The variations of RIS among boundaries and with type of interface probably reflect, at least in part, intrinsic differences in sink efficiency

  13. X-ray induced fluorescence measurement of segregation in a DyI{sub 3}-Hg metal-halide lamp

    Nimalasuriya, T [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Curry, J J [National Institute of Standards and Technology, 100 Bureau Drive, Stop 8422, Gaithersburg, MD 20899-8422 (United States); Sansonetti, C J [National Institute of Standards and Technology, 100 Bureau Drive, Stop 8422, Gaithersburg, MD 20899-8422 (United States); Ridderhof, E J [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Shastri, S D [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States); Flikweert, A J [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Stoffels, W W [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Haverlag, M [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Mullen, J J A M van der [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands)

    2007-05-07

    Segregation of elemental Dy in a DyI{sub 3}-Hg metal-halide high-intensity discharge lamp has been observed with x-ray induced fluorescence. Significant radial and axial Dy segregation are seen, with the axial segregation characterized by a Fischer parameter value of {lambda} = 0.215 {+-} 0.002 mm{sup -1}. This is within 7% of the value ({lambda} = 0.20 {+-} 0.01 mm{sup -1}) obtained by Flikweert et al (2005 J. Appl. Phys. 98 073301) based on laser absorption by neutral Dy atoms. Elemental I is seen to exhibit considerably less axial and radial segregation. Some aspects of the observed radial segregation are compatible with a simplified fluid picture describing two main transition regions in the radial coordinate. The first transition occurs in the region where DyI{sub 3} molecules are in equilibrium with neutral Dy atoms. The second transition occurs where neutral Dy atoms are in equilibrium with ionized Dy. These measurements are part of a larger study on segregation in metal-halide lamps under a variety of conditions.

  14. Atomic structure of self-organizing iridium induced nanowires on Ge(001)

    Kabanov, N.S., E-mail: n.kabanov@utwente.nl [Faculty of Physics, Moscow State University, 119991 (Russian Federation); Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Heimbuch, R.; Zandvliet, H.J.W. [Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Saletsky, A.M.; Klavsyuk, A.L. [Faculty of Physics, Moscow State University, 119991 (Russian Federation)

    2017-05-15

    Highlights: • Ir/Ge(001) structure has been studied with DFT calculations and scanning tunneling microscopy. • Ir/Ge(001) nanowires are composed of Ge atoms and Ir atoms are located in subsurface positions. • The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. - Abstract: The atomic structure of self-organizing iridium (Ir) induced nanowires on Ge(001) is studied by density functional theory (DFT) calculations and variable-temperature scanning tunneling microscopy. The Ir induced nanowires are aligned in a direction perpendicular to the Ge(001) substrate dimer rows, have a width of two atoms and are completely kink-less. Density functional theory calculations show that the Ir atoms prefer to dive into the Ge(001) substrate and push up the neighboring Ge substrate atoms. The nanowires are composed of Ge atoms and not Ir atoms as previously assumed. The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. Time-resolved scanning tunneling microscopy measurements reveal that this dynamics is caused by buckled Ge substrate dimers that flip back and forth between their two buckled configurations.

  15. Irradiation induced surface segregation in concentrated alloys: a contribution; Contribution a l`etude de la segregation de surface induite par irradiation dans les alliages concentres

    Grandjean, Y.

    1996-12-31

    A new computer modelization of irradiation induced surface segregation is presented together with some experimental determinations in binary and ternary alloys. The model we propose handles the alloy thermodynamics and kinetics at the same level of sophistication. Diffusion is described at the atomistic level and proceeds vis the jumps of point defects (vacancies, dumb-bell interstitials): the various jump frequencies depend on the local composition in a manner consistent with the thermodynamics of the alloy. For application to specific alloys, we have chosen the simplest statistical approximation: pair interactions in the Bragg Williams approximation. For a system which exhibits the thermodynamics and kinetics features of Ni-Cu alloys, the model generates the behaviour parameters (flux and temperature) and of alloy composition. Quantitative agreement with the published experimental results (two compositions, three temperatures) is obtained with a single set of parameters. Modelling austenitic steels used in nuclear industry requires taking into account the contribution of dumbbells to mass transport. The effects of this latter contribution are studied on a model of Ni-Fe. Interstitial trapping on dilute impurities is shown to delay or even suppress the irradiation induced segregation. Such an effect is indeed observed in the experiments we report on Fe{sub 50}Ni{sub 50} and Fe{sub 49}Ni{sub 50}Hf{sub 1} alloys. (author). 190 refs.

  16. Annealing-induced Ge/Si(100) island evolution

    Zhang Yangting; Drucker, Jeff

    2003-01-01

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  17. Investigation of GeV proton-induced spallation reactions

    Hilscher, D.; Herbach, C.-M.; Jahnke, U.

    2003-01-01

    A reliable and precise modeling of GeV proton-induced spallation reactions is indispensable for the design of the spallation module and the target station of future accelerator driven hybrid reactors (ADS) or spallation neutron sources (ESS), in particular, to provide precise predictions for the neutron production, the radiation damage of materials (window), and the production of radioactivity ( 3 H, 7 Be etc.) in the target medium. Detailed experimental nuclear data are needed for sensitive validations and improvements of the models, whose predictive power is strongly dependent on the correct physical description of the three main stages of a spallation reaction: (i) the Intra-Nuclear-Cascade (INC) with the fast heating of the target nucleus, (ii) the de-excitation due to pre-equilibrium emission including the possibility of multi-fragmentation, and (iii) the statistical decay of thermally excited nuclei by evaporation of light particles and fission in the case of heavy nuclei. Key experimental data for this endeavour are absolute production cross sections and energy spectra for neutrons and light charged-particles (LCPs), emission of composite particles prior and post to the attainment of an equilibrated system, distribution of excitation energies deposited in the nuclei after the INC, and fission probabilities. The correlations of these quantities are particularly important to detect and identify possible deficiencies of the theoretical modeling of the various stages of a spallation reaction. Systematic measurements of such data are furthermore needed over large ranges of target nuclei and incident proton energies. Such data has been measured with the NESSI detector. An overview of new and previous results will be given. (authors)

  18. Radiation-induced segregation in desensitized type 304 austenitic stainless steel

    Ahmedabadi, Parag; Kain, V.; Arora, K.; Samajdar, I.; Sharma, S.C.; Bhagwat, P.

    2011-01-01

    Graphical abstract: Schematic representation of overall experimental and results, indicating attack, after the DL-EPR test, on grain boundaries, twin boundaries and pit-like features within grains at the depth of maximum attack. The sensitized specimen also showed severe attack on grain boundaries, however, attack on twin-boundaries and pit-like features were not noticed. Display Omitted Highlights: → Characterization of radiation-induced segregation done by EPR and AFM examination. → Cr depletion adjacent to carbides due to RIS in irradiated desensitized 304 SS. → Effectiveness as defect sink: twins > pit-like features > grain boundary. - Abstract: Radiation-induced segregation (RIS) in desensitized type 304 stainless steel (SS) was investigated using a combination of electrochemical potentiokinetic reactivation (EPR) test and atomic force microscopy (AFM). Desensitized type 304 SS was irradiated to 0.43 dpa (displacement per atom) using 4.8 MeV protons at 300 deg. C. The maximum attack in the EPR test for the irradiated desensitized SS was measured at a depth of 70 μm from the surface. Grain boundaries and twin boundaries got attacked and pit-like features within the grains were observed after the EPR test at the depth of 70 μm. The depth of attack, as measured by AFM, was higher at grain boundaries and pit-like features as compared to twin boundaries. It has been shown that the chromium depletion due to RIS takes place at the carbide-matrix as well as at the carbide-carbide interfaces at grain boundaries. The width of attack at grain boundaries after the EPR test of the irradiated desensitized specimen appeared larger due to the dislodgement of carbides at grain boundaries.

  19. Radiation-induced segregation in desensitized type 304 austenitic stainless steel

    Ahmedabadi, Parag, E-mail: adit@barc.gov.in [Materials Science Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Kain, V. [Materials Science Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Arora, K. [PEC University of Technology, Chandigarh (India); Samajdar, I. [Department of Metallurgical Engineering and Materials Science, Indian Institute Technology Bombay, Powai, Mumbai 400 076 (India); Sharma, S.C.; Bhagwat, P. [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

    2011-09-30

    Graphical abstract: Schematic representation of overall experimental and results, indicating attack, after the DL-EPR test, on grain boundaries, twin boundaries and pit-like features within grains at the depth of maximum attack. The sensitized specimen also showed severe attack on grain boundaries, however, attack on twin-boundaries and pit-like features were not noticed. Display Omitted Highlights: > Characterization of radiation-induced segregation done by EPR and AFM examination. > Cr depletion adjacent to carbides due to RIS in irradiated desensitized 304 SS. > Effectiveness as defect sink: twins > pit-like features > grain boundary. - Abstract: Radiation-induced segregation (RIS) in desensitized type 304 stainless steel (SS) was investigated using a combination of electrochemical potentiokinetic reactivation (EPR) test and atomic force microscopy (AFM). Desensitized type 304 SS was irradiated to 0.43 dpa (displacement per atom) using 4.8 MeV protons at 300 deg. C. The maximum attack in the EPR test for the irradiated desensitized SS was measured at a depth of 70 {mu}m from the surface. Grain boundaries and twin boundaries got attacked and pit-like features within the grains were observed after the EPR test at the depth of 70 {mu}m. The depth of attack, as measured by AFM, was higher at grain boundaries and pit-like features as compared to twin boundaries. It has been shown that the chromium depletion due to RIS takes place at the carbide-matrix as well as at the carbide-carbide interfaces at grain boundaries. The width of attack at grain boundaries after the EPR test of the irradiated desensitized specimen appeared larger due to the dislodgement of carbides at grain boundaries.

  20. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  1. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  2. Fragment formation in GeV-energy proton and light heavy-ion induced reactions

    Murakami, T.; Haga, M.; Haseno, M.

    2002-01-01

    We have investigated similarities and differences among the fragment formation processes in GeV-energy light-ion and light heavy-ion induced reactions. We have newly measured inclusive and exclusive energy spectra of intermediate mass fragments (3 ≤ Z ≤ 30; IMFs) for 8-GeV 16 O and 20 Ne and 12-GeV 20 Ne induced target multifragmentations (TMFs) in order to compare them with those previously measured for 8- and 12-GeV proton induced TMFs. We fond noticeable difference in their spectrum shapes and magnitudes but all of them clearly indicate the existence of sideward-peaked components, indicating fragment formations are mainly dictated not by a incident energy per nucleon but by a total energy of the projectile. (author)

  3. Si effects on radiation induced segregation in high purity Fe-18Cr-14Ni alloys irradiated by Ni ions

    Ohta, Joji; Kako, Kenji; Mayuzumi, Masami; Kusanagi, Hideo; Suzuki, Takayoshi

    1999-01-01

    To illustrate the effects of the element Si on radiation induced segregation, which causes irradiation assisted stress corrosion cracking (IASCC), we investigated grain boundary chemistry of high purity Fe-18Cr-14Ni-Si alloys irradiated by Ni ions using FE-TEM. The addition of Si up to 1% does not affect the Cr depletion at grain boundaries, while it slightly enhances the depletion of Fe and the segregation of Ni and Si. The addition of 2% Si causes the depletion of Cr and Fe and the segregation of Ni and Si at grain boundaries. Thus, the Si content should be as low as possible. In order to reduce the depletion of Cr at grain boundaries, which is one of the major causes of IASCC, Si content should be less than 1%. (author)

  4. Metal Induced Gap States on Pt/Ge(001)

    Oncel, N.; van Beek, W.J.; Poelsema, Bene; Zandvliet, Henricus J.W.

    2007-01-01

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting

  5. Structural and electronic properties of Pt induced nanowires on Ge(110)

    Zhang, L.; Bampoulis, P.; Safaei, A.; Zandvliet, H.J.W.; Houselt, A. van, E-mail: A.vanHouselt@utwente.nl

    2016-11-30

    Highlights: • Deposition of Pt induces regularly spaced (1.13 nm, 1.97 nm and 3.38 nm) nanowires on Ge(110). • In the troughs between the wires spaced 6× the Ge lattice consant pentagons are observed. • Spatially resolved STS reveals a filled electronic state at −0.35 eV. • This state has its highest intensity above the pentagons. • For 2 ML Pt, nanowires coexist with PtGe clusters, which become liquid like above 1040 K. - Abstract: The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of a sub-monolayer amount of Pt and subsequent annealing at 1100 (±30) K results into nanowires which are aligned along the densely packed [1–10] direction of the Ge(110) surface. With increasing Pt coverage the nanowires form densely packed arrays with separations of 1.1 ± 0.1 nm, 2.0 ± 0.1 nm and 3.4 ± 0.1 nm. Ge pentagons reside in the troughs for nanowire separations of 3.4 nm, however for smaller nanowire separations no pentagons are found. Spatially resolved scanning tunneling spectroscopy measurements reveal a filled electronic state at −0.35 eV. This electronic state is present in the troughs as well as on the nanowires. The −0.35 eV state has the strongest intensity on the pentagons. For Pt depositions exceeding two monolayers, pentagon free nanowire patches are found, that coexist with Pt/Ge clusters. Upon annealing at 1040 K these Pt/Ge clusters become liquid-like, indicating that we are dealing with eutectic Pt{sub 0.22}Ge{sub 0.78} clusters. Low energy electron microscopy videos reveal the formation and spinodal decomposition of these eutectic Pt/Ge clusters.

  6. How, when and where can spatial segregation induce opinion polarization? Two competing models

    Feliciani, T.; Flache, A.; Tolsma, J.

    2017-01-01

    Increasing ethnic diversity fosters scholarly interest in how the spatial segregation of groups affects opinion polarization in a society. Despite much empirical and theoretical research, there is little consensus in the literature on the causal link between the spatial segregation of two groups and

  7. How, when and where can Spatial Segregation Induce Opinion Polarization? Two Competing Models

    Feliciani, Thomas; Flache, Andreas; Tolsma, Jochem

    2017-01-01

    Increasing ethnic diversity fosters scholarly interest in how the spatial segregation of groups affects opinion polarization in a society. Despite much empirical and theoretical research, there is little consensus in the literature on the causal link between the spatial segregation of two groups and

  8. Mechanism for suppression of radiation-induced segregation by oversized solute addition in austenitic stainless steel

    Hackett, Micah Jeremiah

    The objective of this thesis is to quantify the effect of oversized solutes on radiation-induced segregation in austenitic stainless steels and to determine the mechanism of this effect. Zr or Hf additions to austenitic stainless steels demonstrated a reduction in radiation-induced segregation of Cr and Ni at the grain boundary after proton irradiation at 400°C and 500°C to low doses, but the solute effect disappeared at higher doses. Rate theory modeling of RIS was extended to incorporate a solute-vacancy trapping mechanism to predict the effect of solutes on RIS. The model showed that RIS is most sensitive to the solute-vacancy binding energy. First principles calculations were used to determine a binding energy of 1.08 eV for Zr and 0.71 eV for Hf. Model and experiment agreed in showing suppression of Cr depletion at doses of 3 dpa at 400°C and 1 dpa at 500°C, and experimental results were consistent with the model in showing greater effectiveness of Zr relative to Hf due to a larger binding energy. The dislocation loop microstructure was measured at 400°C, 3 and 7 dpa, and a significant decrease in loop density and total loop line length in the oversized solute alloys relative to the reference alloys. The loop microstructure results were consistent with RIS results by confirming enhanced recombination of point defects by solute-vacancy trapping. Increases in RIS with dose indicated a loss of solute effectiveness, which was consistent with an observed increase in loop line length from 3 to 7 dpa. The loss of solute effectiveness at high dose is attributed to a loss of oversized solute from the matrix due to coarsening of carbide precipitates. X-ray diffraction identified a microstructure with ZrC or HfC precipitates prior to irradiation. Precipitate coarsening was identified as the most likely mechanism for the loss of solute effectiveness on RIS by the following: (1) diffusion analysis suggested significant solute diffusion by the vacancy flux to

  9. Observation of oscillatory radiation induced segregation profiles at grain boundaries in neutron irradiated 316 stainless steel using atom probe tomography

    Barr, Christopher M.; Felfer, Peter J.; Cole, James I.; Taheri, Mitra L.

    2018-06-01

    Radiation induced segregation in austenitic Fe-Ni-Cr stainless steels is a key detrimental microstructural modification experienced in the current generation of light water reactors. In particular, Cr depletion at grain boundaries can be a significant factor in irradiation-assisted stress corrosion cracking. Therefore, having a complete knowledge and mechanistic understanding of radiation induced segregation at high dose and after a long thermal history is desired for continued sustainability of existing reactors. Here, we examine a 12% cold worked AISI 316 stainless steel hexagonal duct exposed in the lower dose, outer blanket region of the EBR-II reactor, by using advanced characterization and analysis techniques including atom probe tomography and analytical scanning transmission electron microscopy. Contrary to existing literature, we observe an oscillatory w-shape Cr and M-shape Ni concentration profile at 31 dpa. The presence and characterization through advanced atom probe tomography analysis of the w-shape Cr RIS profile is discussed in the context of the localized GB plane interfacial excess of the other major and minor alloying elements. The key finding of a co-segregation phenomena coupling Cr, Mo, and C is discussed in the context of the existing solute segregation literature under irradiation with emphasis on improved spatial and chemical resolution of atom probe tomography.

  10. Estimation of Airborne Radioactivity Induced by 8-GeV-Class Electron LINAC Accelerator.

    Asano, Yoshihiro

    2017-10-01

    Airborne radioactivity induced by high-energy electrons from 6 to 10 GeV is estimated by using analytical methods and the Monte Carlo codes PHITS and FLUKA. Measurements using a gas monitor with a NaI(Tl) scintillator are carried out in air from a dump room at SACLA, an x-ray free-electron laser facility with 7.8-GeV electrons and are compared to the simulations.

  11. Simulation of radiation induced segregation and PWSCC susceptibility for austenitic stainless steels

    Fujimoto Koji; Yonezawa, Toshio; Iwamura, Toshihiko [Mitsubishi Heavy Industries Ltd., Takasago, Hyogo (Japan). Takasago R and D Center; Ajiki, Kazuhide [Mitsubishi Heavy Industries Ltd., Kobe (Japan). Kobe Shipyard and Machinery Works; Urata, Sigeru [General Office of Nuclear and Fossil Power Production, Kansai Electric Power Co., Inc., Osaka (Japan)

    2000-08-01

    Recently, irradiation assisted stress corrosion cracking (IASCC) of austenitic stainless steels for core internal components materials become a subject of discussion in light water reactors (LWRs). IASCC has not been found in Pressurized Water Reactors (PWRs). However, the authors have investigated on the possibility of IASCC of austenitic stainless steels for core internal materials so as to be able to estimate the degradation of PWR plants up to the end of their lifetime. In this study, in order to verify the hypothetical that the IASCC in PWRs shall be caused by the primary water stress corrosion cracking (PWSCC) as a result of radiation induced segregation (RIS) at grain boundaries, the authors simulated RIS at grain boundaries of austenitic stainless steels based on previous study and estimated RIS tendency after long time operation. And the authors melted the test alloys whose bulk compositions simulated the grain boundary compositions of irradiated austenitic stainless steels and made clear chromium-nickel-silicon compositions for PWSCC susceptibility area in austenitic alloys by slow strain rate tensile (SSRT) test. (author)

  12. Effects of oversized solutes on radiation-induced segregation in austenitic stainless steels

    Hackett, M. J.; Busby, J. T.; Miller, M. K.; Was, G. S.

    2009-06-01

    Zirconium or hafnium additions to austenitic stainless steels caused a reduction in grain boundary Cr depletion after proton irradiations for up to 3 dpa at 400 °C and 1 dpa at 500 °C. The predictions of a radiation-induced segregation (RIS) model were also consistent with experiments in showing greater effectiveness of Zr relative to Hf due to a larger binding energy. However, the experiments showed that the effectiveness of the solute additions disappeared above 3 dpa at 400 °C and above 1 dpa at 500 °C. The loss of solute effectiveness with increasing dose is attributed to a reduction in the amount of oversized solute from the matrix due to growth of carbide precipitates. Atom probe tomography measurements indicated a reduction in amount of oversized solute in solution as a function of irradiation dose. The observations were supported by diffusion analysis suggesting that significant solute diffusion by the vacancy flux to precipitate surfaces occurs on the time scales of proton irradiations. With a decrease in available solute in solution, improved agreement between the predictions of the RIS model and measurements were consistent with the solute-vacancy trapping process, as the mechanism for enhanced recombination and suppression of RIS.

  13. The role of niobium carbide in radiation induced segregation behaviour of type 347 austenitic stainless steel

    Ahmedabadi, Parag; Kain, Vivekanand; Gupta, Manu; Samajdar, I.; Sharma, S. C.; Bhagwat, P.; Chowdhury, R.

    2011-08-01

    The effect of niobium carbide precipitates on radiation induced segregation (RIS) behaviour in type 347 stainless steel was investigated. The material in the as-received condition was irradiated using double-loop 4.8 MeV protons at 300 °C for 0.43 dpa (displacement per atom). The RIS in the proton irradiated specimen was characterized using double-loop electrochemical potentiokinetic reactivation (DL-EPR) test followed by atomic force microscopic examination. The nature of variation of DL-EPR values with the depth matched with the variation of the calculated irradiation damage (dpa) with the depth. The attack on grain boundaries during EPR tests was negligible indicating absence of chromium depletion zones. The interface between niobium carbide and the matrix acts as a sink for point defects generated during irradiation and this had reduced point defect flux toward grain boundaries. The attack was noticed at a few large cluster of niobium carbide after the DL-EPR test at the depth of maximum attack for the irradiated specimen. Pit-like features were not observed within the matrix indicating the absence of chromium depletion regions within the matrix.

  14. Simulation of radiation induced segregation and PWSCC susceptibility for austenitic stainless steels

    Fujimoto Koji; Yonezawa, Toshio; Iwamura, Toshihiko

    2000-01-01

    Recently, irradiation assisted stress corrosion cracking (IASCC) of austenitic stainless steels for core internal components materials become a subject of discussion in light water reactors (LWRs). IASCC has not been found in Pressurized Water Reactors (PWRs). However, the authors have investigated on the possibility of IASCC of austenitic stainless steels for core internal materials so as to be able to estimate the degradation of PWR plants up to the end of their lifetime. In this study, in order to verify the hypothetical that the IASCC in PWRs shall be caused by the primary water stress corrosion cracking (PWSCC) as a result of radiation induced segregation (RIS) at grain boundaries, the authors simulated RIS at grain boundaries of austenitic stainless steels based on previous study and estimated RIS tendency after long time operation. And the authors melted the test alloys whose bulk compositions simulated the grain boundary compositions of irradiated austenitic stainless steels and made clear chromium-nickel-silicon compositions for PWSCC susceptibility area in austenitic alloys by slow strain rate tensile (SSRT) test. (author)

  15. Dynamics of GeV light-ion-induced reactions

    Kwiatkowski, K.; Bracken, D.S.; Foxford, E.R.; Ginger, D.S.; Hsi, W.C.; Morley, K.B.; Viola, V.E.; Wang, G.; Korteling, R.G.; Legrain, R.

    1996-09-01

    Recent results from studies of the 1.8 - 4.8 GeV 3 He + nat Ag, 197 Au reactions at LNS with the ISiS detector array have shown evidence for a saturation in deposition energy and multifragmentation from a low-density source. The collision dynamics have been examined in the context of intranuclear cascade and BUU models, while breakup phenomena have been compared with EES and SMM models. Fragment-fragment correlations and isotope ratios are also investigated. (K.A.)

  16. CO-induced Pd segregation and the effect of subsurface Pd on CO adsorption on CuPd surfaces

    Padama, A A B; Villaos, R A B; Albia, J R; Diño, W A; Nakanishi, H; Kasai, H

    2017-01-01

    We report results of our study on the adsorption of CO on CuPd surfaces with bulk stoichiometric and nonstoichiometric layers using density functional theory (DFT). We found that the presence of Pd atoms in the subsurface layer promotes the adsorption of CO. We also observed CO-induced Pd segregation on the CuPd surface and we attribute this to the strong CO–Pd interaction. Lastly, we showed that the adsorption of CO promotes Pd–Pd interaction as compared to the pristine surface which promotes strong Cu–Pd interaction. These results indicate that CO adsorption on CuPd surfaces can be tuned by taking advantage of the CO-induced segregation and by considering the role of subsurface Pd atoms. (paper)

  17. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

    Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

    2007-01-01

    Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

  18. Modelling of radiation induced segregation in austenitic Fe alloys at the atomistic level

    Piochaud, Jean-Baptiste

    2013-01-01

    In pressurized water reactors, under irradiation internal structures are subject of irradiation assisted stress corrosion cracking which is influenced by radiation induced segregation (RIS). In this work RIS of 316 stainless steels is modelled considering a model ternary Fe-10Ni-20Cr alloy. For this purpose we have built an Fe-Ni-Cr pair interaction model to simulate RIS at the atomistic level using an atomistic kinetic Monte Carlo approach. The pair interactions have been deduced from density functional theory (DFT) data available in the pure fcc systems but also from DFT calculations we have performed in the Fe-10Ni-20Cr target alloy. Point defect formation energies were calculated and found to depend strongly on the local environment of the defect. As a consequence, a rather good estimation of these energies can be obtained from the knowledge of the number and respective positions of the Ni and Cr atoms in the vicinity of the defect. This work shows that a model based only on interaction parameters between elements positioned in perfect lattice sites (solute atoms and vacancy) cannot capture alone both the thermodynamic and the kinetic aspect of RIS. A more accurate of estimating the barriers encountered by the diffusing species is required than the one used in our model, which has to depend on the saddle point environment. This study therefore shows thus the need to estimate point defect migration energies using the DFT approach to calibrate a model that can be used in the framework of atomic kinetic Monte Carlo simulations. We also found that the reproduction by our pair interaction model of DFT data for the self-interstitial atoms was found to be incompatible with the modelling of RIS under electron irradiation. (author)

  19. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

    Ridgway, M C; Elliman, R G; Rao, M R [Australian National Univ., Canberra, ACT (Australia); Baribeau, J M [National Research Council of Canada, Ottawa, ON (Canada)

    1994-12-31

    Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

  20. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

    Ridgway, M.C.; Elliman, R.G.; Rao, M.R. [Australian National Univ., Canberra, ACT (Australia); Baribeau, J.M. [National Research Council of Canada, Ottawa, ON (Canada)

    1993-12-31

    Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

  1. Irradiation-induced precipitation and solute segregation in alloys. Fourth annual progress report, February 1, 1981-March 31, 1982

    Ardell, A.J.

    1982-04-01

    The studies of irradiation-induced solute segregation (IISS) and irradiation-induced precipitation (IIP) in Ni-Si and Pd-Fe alloys have been completed. Progress is reported for several other projects: irradiation damage in binary Pd-Cr, -Mn and -V alloys (15 at. %); IIP in Pd-Mo and Pd-W alloys; IIP in Pd-25 at. % Cr alloy; and irradiation damage effects in proton-bombarded metallic glasses (Ni-65 Zr, 40 Fe 40 Ni 14 P6B). 27 figures

  2. Promotion of Pt-Ru/C catalysts driven by heat treated induced surface segregation for methanol oxidation reaction

    Wei Yuchen; Liu Chenwei; Chang Weijung; Wang Kuanwen

    2011-01-01

    Research highlights: → Thermal treatments on the Pt-Ru/C induce different extents of surface segregation. → O 2 treatment results in obvious Ru segregation and formation of RuO 2 . → Catalysts treated in H 2 have the excellent CO de-poisoning ability. → N 2 treatment suppresses the surface Pt depletion and hence promotes the MOR. - Abstract: Carbon supported Pt-Ru/C (1:1) alloy catalysts supplied by E-TEK are widely used for fuel cell research. Heat treatments in various atmospheres are conducted for the promotion of the methanol oxidation reaction (MOR) and the investigation of the structure-activity relationship (SAR) of the catalysts. The alloy structures, surface compositions, surface species, and electro-catalytic activities of the alloy catalysts are characterized by X-ray diffraction (XRD), temperature-programmed reduction (TPR), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV), respectively. The as-received Pt-Ru/C catalysts have a Ru rich in the inner core and Pt rich on the outer shell structure. Thermal treatments on the catalysts induce Ru surface segregation in different extents and thereby lead to their alteration of the alloying degrees. O 2 treatment results in obvious Ru segregation and formation of RuO 2 . Catalysts treated in H 2 have the highest I f /I b value in the CV scans among all samples, indicating the catalysts have the excellent CO de-poisoning ability as evidenced by anodic CO stripping experiments. N 2 treatment may serve as an adjustment process for the surface composition and structure of the catalysts, which can suppress the surface Pt depletion (∼60% Pt on the surface), make the components stable and hence promote the MOR significantly.

  3. Promotion of Pt-Ru/C catalysts driven by heat treated induced surface segregation for methanol oxidation reaction

    Wei Yuchen; Liu Chenwei; Chang Weijung [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang Kuanwen, E-mail: kuanwen.wang@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China)

    2011-01-12

    Research highlights: > Thermal treatments on the Pt-Ru/C induce different extents of surface segregation. > O{sub 2} treatment results in obvious Ru segregation and formation of RuO{sub 2}. > Catalysts treated in H{sub 2} have the excellent CO de-poisoning ability. > N{sub 2} treatment suppresses the surface Pt depletion and hence promotes the MOR. - Abstract: Carbon supported Pt-Ru/C (1:1) alloy catalysts supplied by E-TEK are widely used for fuel cell research. Heat treatments in various atmospheres are conducted for the promotion of the methanol oxidation reaction (MOR) and the investigation of the structure-activity relationship (SAR) of the catalysts. The alloy structures, surface compositions, surface species, and electro-catalytic activities of the alloy catalysts are characterized by X-ray diffraction (XRD), temperature-programmed reduction (TPR), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV), respectively. The as-received Pt-Ru/C catalysts have a Ru rich in the inner core and Pt rich on the outer shell structure. Thermal treatments on the catalysts induce Ru surface segregation in different extents and thereby lead to their alteration of the alloying degrees. O{sub 2} treatment results in obvious Ru segregation and formation of RuO{sub 2}. Catalysts treated in H{sub 2} have the highest I{sub f}/I{sub b} value in the CV scans among all samples, indicating the catalysts have the excellent CO de-poisoning ability as evidenced by anodic CO stripping experiments. N{sub 2} treatment may serve as an adjustment process for the surface composition and structure of the catalysts, which can suppress the surface Pt depletion ({approx}60% Pt on the surface), make the components stable and hence promote the MOR significantly.

  4. The effect of primary recoil spectrum on radiation induced segregation in nickel-silicon alloys

    Averback, R. S.; Rehn, L. E.; Wagner, W.; Ehrhart, P.

    1983-08-01

    Segregation of silicon to the surface of Ni-12.7 at% Si alloys during 2.0-MeV He and 3.25-MeV Kr irradiations was measured using Rutherford backscattering spectrometry. For equal calculated defect production rates the Kr irradiation was Ni-Si alloys is presented which qualitatively explains the segregation results. The model assumes that small interstitial-atom-clusters form in individual cascades and that these clusters become trapped at silicon solute atoms. The vacancy thereby becomes the more mobile defect. The model should also have relevance for the observation that void swelling in nickel is suppressed by the addition of silicon solute.

  5. Electrically induced phase transition in GeSbTe alloys

    Bruns, Gunnar; Schlockermann, Carl; Woda, Michael; Wuttig, Matthias [I. Physikalisches Institut Ia, RWTH Aachen, 52056 Aachen (Germany)

    2008-07-01

    While phase change materials have already successfully been applied in rewriteable optical data storage, they are now also promising to form the basis for novel non-volatile electrical data storage devices. To understand the physical concepts of these so-called Phase Change Random Access Memory (PCRAM) it is mandatory to gain a deeper insight into the switching process between the highly resistive amorphous and the lowly resistive crystalline phase. The fast phase transitions between the amorphous and crystalline state of GeSbTe-based alloys has so far often been studied using pulsed laser irradiation. In this work an alternative approach is employed to investigate this transition. Electrical pulses are used to rapidly and reversibly switch between the two states. For these experiments a setup was built with a specially designed contacting circuit board to meet the requirements of electrical measurements on a nanosecond timescale. The influence of the pulse parameters on the change of device resistance was determined for different initial states. Furthermore the high time resolution of 0.4 ns allows investigation of transient electrical effects like the so-called threshold switching first described by Ovshinsky in the late 1960s.

  6. Electrically induced phase transition in GeSbTe alloys

    Bruns, Gunnar; Schlockermann, Carl; Woda, Michael; Wuttig, Matthias

    2008-01-01

    While phase change materials have already successfully been applied in rewriteable optical data storage, they are now also promising to form the basis for novel non-volatile electrical data storage devices. To understand the physical concepts of these so-called Phase Change Random Access Memory (PCRAM) it is mandatory to gain a deeper insight into the switching process between the highly resistive amorphous and the lowly resistive crystalline phase. The fast phase transitions between the amorphous and crystalline state of GeSbTe-based alloys has so far often been studied using pulsed laser irradiation. In this work an alternative approach is employed to investigate this transition. Electrical pulses are used to rapidly and reversibly switch between the two states. For these experiments a setup was built with a specially designed contacting circuit board to meet the requirements of electrical measurements on a nanosecond timescale. The influence of the pulse parameters on the change of device resistance was determined for different initial states. Furthermore the high time resolution of 0.4 ns allows investigation of transient electrical effects like the so-called threshold switching first described by Ovshinsky in the late 1960s

  7. Effect of crystal orientation on grain boundary migration and radiation-induced segregation

    Hashimoto, N.; Eda, Y.; Takahashi, H.

    1996-01-01

    Fe-Cr-Ni, Ni-Al and Ni-Si alloys were electron-irradiated using a high voltage electron microscope (1 MeV), and in situ observations of the structural evolution and micro-chemical analysis were carried out. During the irradiation, the grain boundaries in the irradiated region migrated, while no grain boundary migration occurred in the unirradiated area. The occurrence of boundary migration depended on the orientation relationship of the boundary interfaces. Grain boundary migration took place in Fe-Cr-Ni and Ni-Si alloys with large crystal orientation difference between the two grains across a grain boundary. In Ni-Al, however, the grain boundary migration did not occur. The solute segregation was caused at grain boundary under irradiation and this segregation behavior was closely related to solute size, namely the concentrations of undersized Ni and oversized Cr elements in Fe-Cr-Ni alloy increased and reduced at grain boundary, respectively. The same dependence of segregation on the solute size was derived in Ni-Si and Ni-Al alloys, in which Si and Al solutes are undersized and oversized elements, respectively. Therefore, Si solute enriched and Al solute depleted at grain boundary. From the present segregation behavior, it is suggested that the flow of point defects into the boundary is the cause of grain boundary migration. (orig.)

  8. Antisite-defect-induced surface segregation in ordered NiPt alloy

    Pourovskii, L.V.; Ruban, Andrei; Abrikosov, I.A.

    2003-01-01

    alloys corresponds to the (111) truncation of the bulk L1(0) ordered structure. However, the (111) surface of the nickel deficient Ni49Pt51 alloy is strongly enriched by Pt and should exhibit the pattern of the 2x2 structure. Such a drastic change in the segregation behavior is due to the presence...

  9. Radiation-induced segregation at grain boundaries in AL-6XN stainless steels irradiated by hydrogen ions

    Long, Yunxiang; Zheng, Zhongcheng; Guo, Liping; Zhang, Weiping; Shen, Zhenyu; Tang, Rui

    2018-04-01

    The effect of high concentration of hydrogen on the segregation of radiation-induced segregation (RIS) in AL-6XN stainless steels has been investigated by transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy. Specimens were irradiated with 100 keV H2+ ions from 1 dpa to 5 dpa at 380 °C to investigated the dose dependence of grain boundary RIS. A specimen was irradiated to 5 dpa at 290 °C to study the effect of irradiation temperature. The trends of Cr depletion and Ni enrichment with irradiation dose is similar to that of other austenitic steels reported in the literatures, but the higher concentration of hydrogen made the RIS profile wider. An abnormal phenomenon that the degree of RIS increased with decreasing irradiation temperature was found, indicating that with the retention of hydrogen in the steels, temperature dependence of RIS is dominated by the quantity of retained hydrogen, rather than by thermal segregation processes.

  10. Surface-passivation-induced optical changes in Ge quantum dots

    Reboredo, F. A.; Zunger, Alex

    2001-01-01

    One of the most interesting properties of quantum dots is the possibility to tune the band gap as a function of their size. Here we explore the possibility of changing the lifetime of the lowest-energy excited state by altering the surface passivation. We show that a moderately electronegative passivation potential can induce long-lived excitons without appreciable changes to the band gap. In addition, for such passivation the symmetry of the valence-band maximum is γ 8# sub v# (t 1 derived) instead of the more usual γ 8v (t 2 derived). This reverses the effect of the exchange interaction on the bright-dark exciton splitting

  11. Germ Cell-less Promotes Centrosome Segregation to Induce Germ Cell Formation

    Dorothy A. Lerit

    2017-01-01

    Full Text Available The primordial germ cells (PGCs specified during embryogenesis serve as progenitors to the adult germline stem cells. In Drosophila, the proper specification and formation of PGCs require both centrosomes and germ plasm, which contains the germline determinants. Centrosomes are microtubule (MT-organizing centers that ensure the faithful segregation of germ plasm into PGCs. To date, mechanisms that modulate centrosome behavior to engineer PGC development have remained elusive. Only one germ plasm component, Germ cell-less (Gcl, is known to play a role in PGC formation. Here, we show that Gcl engineers PGC formation by regulating centrosome dynamics. Loss of gcl leads to aberrant centrosome separation and elaboration of the astral MT network, resulting in inefficient germ plasm segregation and aborted PGC cellularization. Importantly, compromising centrosome separation alone is sufficient to mimic the gcl loss-of-function phenotypes. We conclude Gcl functions as a key regulator of centrosome separation required for proper PGC development.

  12. Temper embrittlement, irradiation induced phosphorus segregation and implications for post-irradiation annealing of reactor pressure vessels

    McElroy, R.J.; English, C.A.; Foreman, A.J.; Gage, G.; Hyde, J.M.; Ray, P.H.N.; Vatter, I.A.

    1999-01-01

    Three steels designated JPB, JPC and JPG from the IAEA Phase 3 Programme containing two copper and phosphorus levels were pre- and post-irradiation Charpy and hardness tested in the as-received (AR), 1200 C/0.5h heat treated (HT) and heat treated and 450 C/2000h aged (HTA) conditions. The HT condition was designed to simulate coarse grained heat-affected zones (HAZ's) and showed a marked sensitivity to thermal ageing in all three alloys. Embrittlement after thermal ageing was greater in the higher phosphorus alloys JPB and JPG. Charpy shifts due to thermal ageing of between 118 and 209 C were observed and accompanied by pronounced intergranular fracture, due to phosphorus segregation. The irradiation embrittlement response was complex. The low copper alloys, JPC and JPB, in the HT and HTA condition exhibited significant irradiation induced Charpy shift but very low or even negative hardness changes indicating non-hardening embrittlement. The higher copper alloy, JPG, also exhibited irradiation hardening in line with its copper content. Fractographic and microchemical studies indicated irradiation induced phosphorus segregation and a transition from cleavage to intergranular failure at grain boundary phosphorus concentrations above a critical level. The enhanced grain boundary phosphorus level increased with dose in agreement with a kinetic segregation model developed at Harwell. The relevance of the thermal ageing studies to RPV Annealing for Plant-Life Extension was identified early in the program. It is of concern that annealing of RPV's has been performed, or is proposed, at temperatures in the range 425--475 C for periods of about 1 week (168h). Much attention has been given to the use of in-situ hardness measurements and machining miniature Charpy and tensile specimens from belt-line plate and weld materials. However, HAZ's, often containing higher phosphorus levels than the present materials, have largely been ignored. A post-irradiation annealing (PIA

  13. The role of meiotic cohesin REC8 in chromosome segregation in {gamma} irradiation-induced endopolyploid tumour cells

    Erenpreisa, Jekaterina [Latvian Biomedicine Research and Study Centre, Riga, LV-1067 (Latvia); Cragg, Mark S. [Tenovus Laboratory, Cancer Sciences Division, Southampton University School of Medicine, General Hospital, Southampton SO16 6YD (United Kingdom); Salmina, Kristine [Latvian Biomedicine Research and Study Centre, Riga, LV-1067 (Latvia); Hausmann, Michael [Kirchhoff Inst. fuer Physik, Univ. of Heidelberg, D-69120 Heidelberg (Germany); Scherthan, Harry, E-mail: scherth@web.de [Inst. fuer Radiobiologie der Bundeswehr in Verbindung mit der Univ. Ulm, D-80937 Munich (Germany); MPI for Molec. Genetics, 14195 Berlin (Germany)

    2009-09-10

    Escape from mitotic catastrophe and generation of endopolyploid tumour cells (ETCs) represents a potential survival strategy of tumour cells in response to genotoxic treatments. ETCs that resume the mitotic cell cycle have reduced ploidy and are often resistant to these treatments. In search for a mechanism for genome reduction, we previously observed that ETCs express meiotic proteins among which REC8 (a meiotic cohesin component) is of particular interest, since it favours reductional cell division in meiosis. In the present investigation, we induced endopolyploidy in p53-dysfunctional human tumour cell lines (Namalwa, WI-L2-NS, HeLa) by gamma irradiation, and analysed the sub-cellular localisation of REC8 in the resulting ETCs. We observed by RT-PCR and Western blot that REC8 is constitutively expressed in these tumour cells, along with SGOL1 and SGOL2, and that REC8 becomes modified after irradiation. REC8 localised to paired sister centromeres in ETCs, the former co-segregating to opposite poles. Furthermore, REC8 localised to the centrosome of interphase ETCs and to the astral poles in anaphase cells where it colocalised with the microtubule-associated protein NuMA. Altogether, our observations indicate that radiation-induced ETCs express features of meiotic cell divisions and that these may facilitate chromosome segregation and genome reduction.

  14. The role of meiotic cohesin REC8 in chromosome segregation in γ irradiation-induced endopolyploid tumour cells

    Erenpreisa, Jekaterina; Cragg, Mark S.; Salmina, Kristine; Hausmann, Michael; Scherthan, Harry

    2009-01-01

    Escape from mitotic catastrophe and generation of endopolyploid tumour cells (ETCs) represents a potential survival strategy of tumour cells in response to genotoxic treatments. ETCs that resume the mitotic cell cycle have reduced ploidy and are often resistant to these treatments. In search for a mechanism for genome reduction, we previously observed that ETCs express meiotic proteins among which REC8 (a meiotic cohesin component) is of particular interest, since it favours reductional cell division in meiosis. In the present investigation, we induced endopolyploidy in p53-dysfunctional human tumour cell lines (Namalwa, WI-L2-NS, HeLa) by gamma irradiation, and analysed the sub-cellular localisation of REC8 in the resulting ETCs. We observed by RT-PCR and Western blot that REC8 is constitutively expressed in these tumour cells, along with SGOL1 and SGOL2, and that REC8 becomes modified after irradiation. REC8 localised to paired sister centromeres in ETCs, the former co-segregating to opposite poles. Furthermore, REC8 localised to the centrosome of interphase ETCs and to the astral poles in anaphase cells where it colocalised with the microtubule-associated protein NuMA. Altogether, our observations indicate that radiation-induced ETCs express features of meiotic cell divisions and that these may facilitate chromosome segregation and genome reduction.

  15. The role of meiotic cohesin REC8 in chromosome segregation in gamma irradiation-induced endopolyploid tumour cells.

    Erenpreisa, Jekaterina; Cragg, Mark S; Salmina, Kristine; Hausmann, Michael; Scherthan, Harry

    2009-09-10

    Escape from mitotic catastrophe and generation of endopolyploid tumour cells (ETCs) represents a potential survival strategy of tumour cells in response to genotoxic treatments. ETCs that resume the mitotic cell cycle have reduced ploidy and are often resistant to these treatments. In search for a mechanism for genome reduction, we previously observed that ETCs express meiotic proteins among which REC8 (a meiotic cohesin component) is of particular interest, since it favours reductional cell division in meiosis. In the present investigation, we induced endopolyploidy in p53-dysfunctional human tumour cell lines (Namalwa, WI-L2-NS, HeLa) by gamma irradiation, and analysed the sub-cellular localisation of REC8 in the resulting ETCs. We observed by RT-PCR and Western blot that REC8 is constitutively expressed in these tumour cells, along with SGOL1 and SGOL2, and that REC8 becomes modified after irradiation. REC8 localised to paired sister centromeres in ETCs, the former co-segregating to opposite poles. Furthermore, REC8 localised to the centrosome of interphase ETCs and to the astral poles in anaphase cells where it colocalised with the microtubule-associated protein NuMA. Altogether, our observations indicate that radiation-induced ETCs express features of meiotic cell divisions and that these may facilitate chromosome segregation and genome reduction.

  16. α-rays induced background in ultra low level counting with Ge spectrometers

    Hubert, P.; Dassie, D.; Larrieu, P.; Leccia, F.; Mennrath, P.; Chevallier, J.; Chevallier, A.; Morales, A.; Nunez-Lagoz, R.; Morales, J.; Villar, J.A.

    1986-01-01

    Background spectra of several spectrometers have been recorded in a deep underground laboratory located in the Frejus tunnel. The results show that an α ray induced background from the 210 Pb decay is observed. A possible explanation could be related to the adsorption of the Rn gas on the surfaces of the Ge crystal and/or other parts during the assembly of the spectrometer. (orig.)

  17. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Ferlet-Cavrois, Veronique; Baggio, Jacques; Duhamel, Olivier; Moen, Kurt A.; Phillips, Stanley D.; Diestelhorst, Ryan M.; hide

    2009-01-01

    SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

  18. Grain boundary migration induced segregation in V-Cr-Ti alloys

    Gelles, D.S. [Pacific Northwest National Lab., Richland, WA (United States); Ohnuki, S.; Takahashi, H. [Univ. of Hokkaido (Japan)

    1996-10-01

    Analytical electron microscopy results are reported for a series of vanadium alloys irradiated in the HFIR JP23 experiment at 500{degrees}C. Alloys were V-5Cr-5Ti and pure vanadium which are expected to have transmuted to V-15Cr-5Ti and V-10Cr following irradiation. Analytical microscopy confirmed the expected transmutation occurred and showed redistribution of Cr and Ti resulting from grain boundary migration in V-5Cr-5Ti, but in pure V, segregation was reduced and no clear trends as a function of position near a boundary were identified.

  19. New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current.

    Park, Yong-Jin; Cho, Ju-Young; Jeong, Min-Woo; Na, Sekwon; Joo, Young-Chang

    2016-02-23

    The novel discovery of a current-induced transition from insulator to metal in the crystalline phase of Ge2Sb2Te5 and GeSb4Te7 have been studied by means of a model using line-patterned samples. The resistivity of cubic phase Ge-Sb-Te compound was reduced by an electrical current (~1 MA/cm(2)), and the final resistivity was determined based on the stress current density, regardless of the initial resistivity and temperature, which indicates that the conductivity of Ge-Sb-Te compound can be modulated by an electrical current. The minimum resistivity of Ge-Sb-Te materials can be achieved at high kinetic rates by applying an electrical current, and the material properties change from insulating to metallic behavior without a phase transition. The current-induced metal transition is more effective in GeSb4Te7 than Ge2Sb2Te5, which depends on the intrinsic vacancy of materials. Electromigration, which is the migration of atoms induced by a momentum transfer from charge carriers, can easily promote the rearrangement of vacancies in the cubic phase of Ge-Sb-Te compound. This behavior differs significantly from thermal annealing, which accompanies a phase transition to the hexagonal phase. This result suggests a new pathway for modulating the electrical conductivity and material properties of chalcogenide materials by applying an electrical current.

  20. Radiation-induced strengthening and absorption of dislocation loops in ferritic Fe–Cr alloys: the role of Cr segregation

    Terentyev, D; Bakaev, A

    2013-01-01

    The understanding of radiation-induced strengthening in ferritic FeCr-based steels remains an essential issue in the assessment of materials for fusion and fission reactors. Both early and recent experimental works on Fe–Cr alloys reveal Cr segregation on radiation-induced nanostructural features (mainly dislocation loops), whose impact on the modification of the mechanical response of the material might be key for explaining quantitatively the radiation-induced strengthening in these alloys. In this work, we use molecular dynamics to study systematically the interaction of dislocations with 1/2〈111〉 and 〈100〉 loops in all possible orientations, both enriched by Cr atoms and undecorated, for different temperatures, loop sizes and dislocation velocities. The configurations of the enriched loops have been obtained using a non-rigid lattice Monte Carlo method. The study reveals that Cr segregation influences the interaction mechanisms with both 1/2〈111〉 and 〈100〉 loops. The overall effect of Cr enrichment is to penalize the mobility of intrinsically glissile 1/2〈111〉 loops, modifying the reaction mechanisms as a result. The following three most important effects associated with Cr enrichment have been revealed: (i) absence of dynamic drag; (ii) suppression of complete absorption; (iii) enhanced strength of small dislocation loops (2 nm and smaller). Overall the effect of the Cr enrichment is therefore to increase the unpinning stress, so experimentally ‘invisible’ nanostructural features may also contribute to radiation-induced strengthening. The reasons for the modification of the mechanisms are explained and the impact of the loading conditions is discussed. (paper)

  1. Thermodynamic and Kinetic Modeling on Thermal Segregation of Phosphorus in Iron

    Yang, Ying [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-03-01

    Radiation induced segregation (RIS) has been frequently reported in structural materials such as austenitic, ferritic, and ferritic-martensitic stainless steels (SS) that have been widely used in light water reactors (LWRs). RIS has been linked to secondary degradation effects in SS including irradiation induced stress corrosion cracking (IASCC). Earlier studies on thermal segregation in Fe based alloys found that metalloids elements such as P, S, Si, Ge, Sn etc. embrittle the materials when enrichment was observed at grain boundaries. RIS of Fe-Cr-Ni based austenitic steels has been modeled in the U.S. 2015 fiscal year (FY2015), which identified the pre-enrichment due to thermal segregation can have an important role on the subsequent RIS. The goal of this work is to develop thermal segregation models for alloying elements in steels for future integration with RIS modeling.

  2. Gradual pressure-induced change in the magnetic structure of the noncollinear antiferromagnet Mn3Ge

    Sukhanov, A. S.; Singh, Sanjay; Caron, L.; Hansen, Th.; Hoser, A.; Kumar, V.; Borrmann, H.; Fitch, A.; Devi, P.; Manna, K.; Felser, C.; Inosov, D. S.

    2018-06-01

    By means of powder neutron diffraction we investigate changes in the magnetic structure of the coplanar noncollinear antiferromagnet Mn3Ge caused by an application of hydrostatic pressure up to 5 GPa. At ambient conditions the kagomé layers of Mn atoms in Mn3Ge order in a triangular 120∘ spin structure. Under high pressure the spins acquire a uniform out-of-plane canting, gradually transforming the magnetic texture to a noncoplanar configuration. With increasing pressure the canted structure fully transforms into the collinear ferromagnetic one. We observed that magnetic order is accompanied by a noticeable magnetoelastic effect, namely, spontaneous magnetostriction. The latter induces an in-plane magnetostrain of the hexagonal unit cell at ambient pressure and flips to an out-of-plane strain at high pressures in accordance with the change of the magnetic structure.

  3. Micro- and macro-structure of implantation-induced disorder in Ge

    Glover, C J; Byrne, A P; Yu, K M; Foran, G J; Clerc, C; Hansen, J L; Nylandsted-Larsen, A

    2000-01-01

    The structure of ion implantation-induced damage in Ge substrates has been investigated with a combination of ion- and photon-based techniques including Rutherford backscattering spectrometry (RBS), perturbed angular correlation (PAC) and extended X-ray absorption fine structure (EXAFS) spectroscopy. For MeV Ge ion implantation at -196 degrees C, the dose dependence of the decrease in local atomic order, determined from EXAFS and PAC, was compared to the number of displaced atoms determined from RBS measurements. An EXAFS determined damage fraction was shown to be a better estimate of amorphous fraction than the number of displaced atoms. PAC was used to elucidate the evolution of defective configurations, and was compared to the RBS and EXAFS results. A fit to the overlap model with the overlap of two ion cascades for complete amorphization best described the experimental results. (16 refs).

  4. Waste segregation

    Clark, D.E.; Colombo, P.

    1982-01-01

    A scoping study has been undertaken to determine the state-of-the-art of waste segregation technology as applied to the management of low-level waste (LLW). Present-day waste segregation practices were surveyed through a review of the recent literature and by means of personal interviews with personnel at selected facilities. Among the nuclear establishments surveyed were Department of Energy (DOE) laboratories and plants, nuclear fuel cycle plants, public and private laboratories, institutions, industrial plants, and DOE and commercially operated shallow land burial sites. These survey data were used to analyze the relationship between waste segregation practices and waste treatment/disposal processes, to assess the developmental needs for improved segregation technology, and to evaluate the costs and benefits associated with the implementation of waste segregation controls. This task was planned for completion in FY 1981. It should be noted that LLW management practices are now undergoing rapid change such that the technology and requirements for waste segregation in the near future may differ significantly from those of the present day. 8 figures

  5. Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

    Marchand, A.; El Hdiy, A.; Troyon, M. [Laboratoire de Recherche en Nanosciences, Bat. 6, case no 15, UFR Sciences, Universite de Reims Champagne Ardenne, 51687 Reims Cedex 2 (France); Amiard, G.; Ronda, A.; Berbezier, I. [IM2NP, Faculte des Sciences et Techniques, Campus de Saint Jerome - Case 142, Avenue Escadrille Normandie Niemen, 13397 Marseille Cedex 20 (France)

    2012-04-16

    Dynamics of hole storage in spherical Ge nanocrystals (NCs) formed by a two step dewetting/nucleation process on an oxide layer grown on an n-doped <001> silicon substrate is studied using a nano-electron beam induced current technique. Carrier generation is produced by an electron beam irradiation. The generated current is collected by an atomic force microscope--tip in contact mode at a fixed position away from the beam spot of about 0.5 {mu}m. This distance represents the effective diffusion length of holes. The time constants of holes charging are determined and the effect of the NC size is underlined.

  6. Mechanisms of alpha emitter production in 12C induced reactions at 1 GeV

    Dufour, J.P.; Delagrange, H.; Del Moral, R.

    1982-01-01

    We present cross sections, mean projected recoil ranges and angular distributions of radioactive alpha emitters produced in 12 C-induced reactions at 1 GeV on targets ranging from Gd to Pb. We use a new technique of on-line electrostatic collection. The wide spectrum of produced isotopes corresponds to nuclei close to the target up to nuclei with as much as 60 nucleons less than the target. The intranuclear cascade calculations can reproduce the main features of nuclei having lost up

  7. Irradiation effects in polycarbonate induced by 2.1 GeV Kr ions

    Tian Huixian; Jin Yunfan; Zhu Zhiyong; Liu Changlong; Sun Youmei; Wang Zhiguang; Liu Jie; Chen Xiaoxi; Wang Yanbin; Hou Mingdong

    2002-01-01

    Polycarbonate films were irradiated with 2.1 GeV Kr ions at room temperature in vacuum and in atmosphere, respectively. The ion beam induced effects were studied by means of Fourier transform infrared (FTIR) and ultraviolet visible (UV/VIS) spectroscopies in reflective mode. FTIR measurements indicate that the main effects are bond breaking, chain scissions and bond rearrangement. The creation of alkyne is the result of bond breaking and bond rearrangement. UV/VIS measurements indicate that at wavelengths of 380, 450 and 500 nm, the normalized absorbances follow approximately a linear relationship with the energy deposited density

  8. High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

    Morand, C.

    1979-01-01

    The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

  9. High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

    Wang, Peng; Li, Xin; Liu, Hanhui; Lai, Shumei; Chen, Yuye; Xu, Yihong; Chen, Songyan; Li, Cheng; Huang, Wei; Tang, Dingliang

    2015-01-01

    High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO x interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.

  10. Shaping Segregation: Convexity vs. concavity

    Gonzalez Briones, Sebastián; Windows-Yule, Kit; Luding, Stefan; Parker, D.J.; Thornton, Anthony Richard

    2014-01-01

    Controlling segregation is both a practical and a theoretical challenge. In this Letter we demonstrate a manner in which rotation-induced segregation may be controlled by altering the geometry of the rotating containers in which granular systems are housed. Using a novel drum design comprising

  11. Isolating the effect of radiation-induced segregation in irradiation-assisted stress corrosion cracking of austenitic stainless steels

    Busby, J.T.; Was, G.S.; Kenik, E.A.

    2002-01-01

    Post-irradiation annealing was used to help identify the role of radiation-induced segregation (RIS) in irradiation-assisted stress corrosion cracking (IASCC) by preferentially removing dislocation loop damage from proton-irradiated austenitic stainless steels while leaving the RIS of major and minor alloying elements largely unchanged. The goal of this study is to better understand the underlying mechanisms of IASCC. Simulations of post-irradiation annealing of RIS and dislocation loop microstructure predicted that dislocation loops would be removed preferentially over RIS due to both thermodynamic and kinetic considerations. To verify the simulation predictions, a series of post-irradiation annealing experiments were performed. Both a high purity 304L (HP-304L) and a commercial purity 304 (CP-304) stainless steel alloy were irradiated with 3.2 MeV protons at 360 deg. C to doses of 1.0 and 2.5 dpa. Following irradiation, post-irradiation anneals were performed at temperatures ranging from 400 to 650 deg. C for times between 45 and 90 min. Grain boundary composition was measured using scanning transmission electron microscopy with energy-dispersive spectrometry in both as-irradiated and annealed samples. The dislocation loop population and radiation-induced hardness were also measured in as-irradiated and annealed specimens. At all annealing temperatures above 500 deg. C, the hardness and dislocation densities decreased with increasing annealing time or temperature much faster than RIS. Annealing at 600 deg. C for 90 min removed virtually all dislocation loops while leaving RIS virtually unchanged. Cracking susceptibility in the CP-304 alloy was mitigated rapidly during post-irradiation annealing, faster than RIS, dislocation loop density or hardening. That the cracking susceptibility changed while the grain boundary chromium composition remained essentially unchanged indicates that Cr depletion is not the primary determinator for IASCC susceptibility. For the same

  12. Size-Induced Segregation in the Stepwise Microhydration of Hydantoin and Its Role in Proton-Induced Charge Transfer

    Calvo, Florent; Bacchus-Montabonel, Marie-Christine

    2018-01-01

    Recent photochemistry experiments provided evidence for the formation of hydantoin by irradiation of interstellar ice analogues. The significance of these results and the importance of hydantoin in prebiotic chemistry and polypeptide synthesis motivate the present theoretical investigation, in which we analyzed the effects of stepwise hydration on the electronic and thermodynamical properties of the structure of microhydrated hydantoin using a variety of computational approaches. We generally find microhydration to proceed around the hydantoin heterocycle until 5 water molecules are reached, at which stage hydration becomes segregated with a water cluster forming aside the heterocycle. The reactivity of microhydrated hydantoin caused by an impinging proton was evaluated through charge transfer collision cross sections for microhydrated compounds but also for hydantoin on icy grains modeled using a cluster approach mimicking the true hexagonal ice surface. The effects of hydration on charge transfer efficiency are mostly significant when few water molecules are present, and they progressively weaken and stabilize in larger clusters. On the ice substrate, charge transfer essentially contributes to a global increase in the cross sections.

  13. Ab initio molecular dynamics simulation of interstitial diffusion in Ni–Cr alloys and implications for radiation induced segregation

    Barnard, L., E-mail: lmbarnard@wisc.edu; Morgan, D., E-mail: ddmorgan@wisc.edu

    2014-06-01

    In this study, ab initio molecular dynamics, implemented via density functional theory, is used to simulate self-interstitial diffusion in pure Ni and in the Ni-18 at.% Cr model alloy. Interstitial tracer diffusivities are measured from simulation results for pure Ni and for both Ni and Cr in the Ni–18Cr alloy. An Arrhenius function fit to these tracer diffusivities is then used in a rate theory model for radiation induced segregation, along with the experimentally measured vacancy diffusivities. It is predicted that interstitial diffusion has a tendency to cause Cr enrichment near grain boundaries, partially counterbalancing the tendency for vacancy diffusion to cause Cr depletion. This results in more mild Cr depletion than would result if only the vacancy diffusion were accounted for, in better agreement with experiment. This physical description of RIS in Ni–Cr alloys, which invokes the effects of both vacancy and interstitial diffusion, is distinct from the conventional description which accounts only for the effect of vacancy diffusion.

  14. Effects of He implantation on radiation induced segregation in Cu-Au and Ni-Si alloys

    Iwase, A.; Rehn, L. E.; Baldo, P. M.; Funk, L.

    Effects of He implantation on radiation induced segregation (RIS) in Cu-Au and Ni-Si alloys were investigated using in situ Rutherford backscattering spectrometry during simultaneous irradiation with 1.5-MeV He and low-energy (100 or 400-keV) He ions at elevated temperatures. RIS during single He ion irradiation, and the effects of pre-implantation with low-energy He ions, were also studied. RIS near the specimen surface, which was pronounced during 1.5-MeV He single-ion irradiation, was strongly reduced under low-energy He single-ion irradiation, and during simultaneous irradiation with 1.5-MeV He and low-energy He ions. A similar RIS reduction was also observed in the specimens pre-implanted with low-energy He ions. The experimental results indicate that the accumulated He atoms cause the formation of small bubbles, which provide additional recombination sites for freely migrating defects.

  15. Ab initio molecular dynamics simulation of interstitial diffusion in Ni–Cr alloys and implications for radiation induced segregation

    Barnard, L.; Morgan, D.

    2014-01-01

    In this study, ab initio molecular dynamics, implemented via density functional theory, is used to simulate self-interstitial diffusion in pure Ni and in the Ni-18 at.% Cr model alloy. Interstitial tracer diffusivities are measured from simulation results for pure Ni and for both Ni and Cr in the Ni–18Cr alloy. An Arrhenius function fit to these tracer diffusivities is then used in a rate theory model for radiation induced segregation, along with the experimentally measured vacancy diffusivities. It is predicted that interstitial diffusion has a tendency to cause Cr enrichment near grain boundaries, partially counterbalancing the tendency for vacancy diffusion to cause Cr depletion. This results in more mild Cr depletion than would result if only the vacancy diffusion were accounted for, in better agreement with experiment. This physical description of RIS in Ni–Cr alloys, which invokes the effects of both vacancy and interstitial diffusion, is distinct from the conventional description which accounts only for the effect of vacancy diffusion

  16. Temperature-induced assembly of semiconductor nanocrystals into fractal architectures and thermoelectric power properties in Au/Ge bilayer films

    Li Quanbao; Wang Jian; Jiao Zheng [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Wu Minghong, E-mail: mhwu@staff.shu.edu.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Shek, Chan-Hung; Lawrence Wu, C.M.; Lai, Joseph K.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chen Zhiwen, E-mail: cnzwchen@yahoo.com.cn [Shanghai Applied Radiation Institute, Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2011-08-15

    Highlights: > Ge fractal architectures were achieved by temperature-induced assembly. > The appearance of fractal architectures influences the thermoelectric power. > But it has little effect on the resistivity. > The values of the superlocalization exponent were within 1.22 {<=} {xi} {<=} 1.29. > It was higher than expected for two-dimension fractal system. - Abstract: Fractal architectures of semiconductor nanocrystals were successfully achieved by temperature-induced assembly of semiconductor nanocrystals in gold/germanium (Au/Ge) bilayer films. New assessment strategies of fractal architectures are of fundamental importance in the development of micro/nano-devices. Temperature-dependent properties including resistivity and thermoelectric power (TEP) of Au/Ge bilayer films with self-similar fractal patterns were investigated in detail. Experimental results indicated that the microstructure of Au film plays an important role in the characteristics of Au/Ge bilayer films after annealing and the crystallization processes of amorphous Ge accompany by fractal formation of Ge nanocrystals via temperature-induced assembly. The appearance of fractal architectures has significantly influence on the TEP but little effect on the resistivity of the annealed bilayer film. By analysis of the data, we found that the values of superlocalization exponent are within 1.22 {<=} {xi} {<=} 1.29, which are higher than expected for two-dimension fractal systems. The results provided possible evidence for the superlocalization on fractal architectures in Au/Ge bilayer films. The TEP measurements are considered a more effective method than the conductivity for investigating superlocalization in a percolating system.

  17. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    Shu, Michael J. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Zalden, Peter [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Chen, Frank [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Weems, Ben [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Chatzakis, Ioannis [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Hoffmann, Matthias C. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany); JARA–Fundamentals of Information Technology, RWTH Aachen University, 52056 Aachen (Germany); Lindenberg, Aaron M., E-mail: aaronl@stanford.edu [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2014-06-23

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200 kV/cm.

  18. Assembly of Ge nanocrystals on SiO2 via a stress-induced dewetting process

    Sutter, E; Sutter, P

    2006-01-01

    We use epitaxial Ge islands on silicon-on-insulator (001) to initiate and drive the dewetting of the ultrathin ( 2 layer and transforms the Ge islands into oxide-supported, electrically isolated, Ge-rich nanocrystals. We investigate the process of dewetting and demonstrate that it can be used for the controlled assembly of nanocrystals-from isolated single ones to dense arrays

  19. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  20. Segregation of Spontaneous and Training Induced Recovery from Visual Field Defects in Subacute Stroke Patients

    Douwe P. Bergsma

    2017-12-01

    Full Text Available Whether rehabilitation after stroke profits from an early start is difficult to establish as the contributions of spontaneous recovery and treatment are difficult to tease apart. Here, we use a novel training design to dissociate these components for visual rehabilitation of subacute stroke patients with visual field defects such as hemianopia. Visual discrimination training was started within 6 weeks after stroke in 17 patients. Spontaneous and training-induced recoveries were distinguished by training one-half of the defect for 8 weeks, while monitoring spontaneous recovery in the other (control half of the defect. Next, trained and control regions were swapped, and training continued for another 8 weeks. The same paradigm was also applied to seven chronic patients for whom spontaneous recovery can be excluded and changes in the control half of the defect point to a spillover effect of training. In both groups, field stability was assessed during a no-intervention period. Defect reduction was significantly greater in the trained part of the defect than in the simultaneously untrained part of the defect irrespective of training onset (p = 0.001. In subacute patients, training contributed about twice as much to their defect reduction as the spontaneous recovery. Goal Attainment Scores were significantly and positively correlated with the total defect reduction (p = 0.01, percentage increase reading speed was significantly and positively correlated with the defect reduction induced by training (epoch 1: p = 0.0044; epoch 2: p = 0.023. Visual training adds significantly to the spontaneous recovery of visual field defects, both during training in the early and the chronic stroke phase. However, field recovery as a result of training in this subacute phase was as large as in the chronic phase. This suggests that patients benefited primarily of early onset training by gaining access to a larger visual field sooner.

  1. Solute segregation during irradiation

    Wiedersich, H.; Okamoto, P.R.; Lam, N.Q.

    1977-01-01

    Irradiation at elevated temperature induces redistribution of the elements in alloys on a microstructural level. This phenomenon is caused by differences in the coupling of the various alloy constituents to the radiation-induced defect fluxes. A simple model of the segregation process based on coupled reaction-rate and diffusion equations is discussed. The model gives a good description of the experimentally observed consequences of radiation-induced segregation, including enrichment or depletion of solute elements near defect sinks such as surfaces, voids and dislocations; precipitation of second phases in solid solutions; precipitate redistribution in two-phase alloys; and effects of defect-production rates on void-swelling rates in alloys with minor solute additions

  2. Segregation of cascade induced interstitial loops at dislocations: possible effect on initiation of plastic deformation

    Trinkaus, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Festkoerperforschung; Singh, B.N. [Materials Research Department, Risoe National Laboratory, DK-4000 Roskilde (Denmark); Foreman, A.J.E. [Materials Performance Department, Harwell Laboratory, Oxfordshire OX11 0RA (United Kingdom)

    1997-11-01

    In metals and alloys subjected to cascade damage dislocations are frequently found to be decorated with a high density of small clusters of self-interstitial atoms (SIAs) in the form of dislocation loops. In the present paper it is shown that this effect may be attributed to the glide and trapping of SIA loops, produced directly in cascades (rather than to the enhanced agglomeration of single SIAs), in the strain field of the dislocations. The conditions for the accumulation of glissile SIA loops near dislocations as well as the dose and temperature dependencies of this phenomenon are discussed. It is suggested that the decoration of dislocations with loops may play a key role in radiation hardening subjected to cascade damage. It is shown, for example, that the increase in the upper yield stress followed by a yield drop and plastic instability in metals andalloys subjected to cascade damage cannot be rationalized in terms of conventional dispersed barrier hardening (DBH) but may be understood in terms of cascade induced source hardening (CISH) in which the dislocations are considered to be locked by the loops decorating them. Estimates for the stress necessary to pull a dislocation away from its loop `cloud` are used to discuss the dose and temperature dependence of plastic flow initiation. (orig.). 55 refs.

  3. Segregation of cascade induced interstitial loops at dislocations: possible effect on initiation of plastic deformation

    Trinkaus, H.; Foreman, A.J.E.

    1997-01-01

    In metals and alloys subjected to cascade damage dislocations are frequently found to be decorated with a high density of small clusters of self-interstitial atoms (SIAs) in the form of dislocation loops. In the present paper it is shown that this effect may be attributed to the glide and trapping of SIA loops, produced directly in cascades (rather than to the enhanced agglomeration of single SIAs), in the strain field of the dislocations. The conditions for the accumulation of glissile SIA loops near dislocations as well as the dose and temperature dependencies of this phenomenon are discussed. It is suggested that the decoration of dislocations with loops may play a key role in radiation hardening subjected to cascade damage. It is shown, for example, that the increase in the upper yield stress followed by a yield drop and plastic instability in metals andalloys subjected to cascade damage cannot be rationalized in terms of conventional dispersed barrier hardening (DBH) but may be understood in terms of cascade induced source hardening (CISH) in which the dislocations are considered to be locked by the loops decorating them. Estimates for the stress necessary to pull a dislocation away from its loop 'cloud' are used to discuss the dose and temperature dependence of plastic flow initiation. (orig.)

  4. Induced cooperation to access a shareable reward increases the hierarchical segregation of wild vervet monkeys.

    Riccardo Pansini

    Full Text Available Until now cooperation experiments in primates have paid little attention to how cooperation can emerge and what effects are produced on the structure of a social group in nature. I performed field experiments with three groups of wild vervet monkeys in South Africa. I induced individuals to repeatedly approach and operate food containers. At least two individuals needed to operate the containers in order to get the reward. The recurrent partner associations observed before the experiment only partly predicted the forming of cooperative partnerships during the experiment. While most of the tested subjects cooperated with other partners, they preferred to do so with specific combinations of individuals and they tended not to mix with other group members outside these preferred partnerships. Cooperation therefore caused the relatively homogeneous networks I observed before the experiment to differentiate. Similar to a matching market, the food sharing partners selected each other limiting their choice. Interestingly neither sex nor age classes explained the specific partner matching. Kinship could not explain it either. Rather, higher ranking individuals cooperated with other higher ranking individuals, and lower ranking also matched among the same rank. This study reveals the key role dominance rank plays when food resources are patchy and can only be accessed through sharing with other individuals.

  5. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  6. Charged particle spectra in oxygen-induced reactions at 14. 6 and 60 GeV/Nucleon

    Adamovich, M I; Aggarwal, M M; Arora, R; Alexandrov, Y A; Azimov, S A; Badyal, S K; Basova, E; Bhalla, K B; Bahsin, A; Bhatia, V S; Bomdarenko, R A; Burnett, T H; Cai, X; Chernova, L P; Chernyavski, M M; Dressel, B; Friedlander, E M; Gadzhieva, S I; Ganssauge, E R; Garpman, S; Gerassimov, S G; Gill, A; Grote, J; Gulamov, K G; Gulyamov, V G; Gupta, V K; Hackel, S; Heckman, H H; Jakobsson, B; Judek, B; Katroo, S; Kadyrov, F G; Kallies, H; Karlsson, L; Kaul, G L; Kaur, M; Kharlamov, S P; Kohli, J; Kumar, V; Lal, P; Larionova, V G; Lindstrom, P J; Liu, L S; Lokanathan, S; Lord, J; Lukicheva, N S; Mangotra, L K; Maslennikova, N V; Mitta, I S; Monnand, E; Mookerjee, S; Mueller, C; Nasyrov, S H; Nvtny, V S; Orlova, G I; Otterlund, I; Peresadko, N G; Persson, S; Petrov, N V; Qian, W Y; Raniwala, R; Raniwala, S; Rao, N K; Rhee, J Y; Shaidkhanov, N; Salmanova, N G; Schulz, W; Schussler, F; Shukla, V S; Skelding, D; Soederstroe,

    1989-10-01

    Multiplicity distributions and pseudo-rapidity distributions of charged particles from oxygen-induced nuclear reactions at 14.6 and 60 GeV/nucleon are presented. The data were taken from the EMU{minus}01 emulsion stacks and compared to simulations from the Lund Monte Carlo Model (FRITIOF).

  7. Segregation of Calcium Isotopes in the Atmospheres of CP Stars as a Consequence of Light-Induced Drift

    Parkhomenko, A. I.; Shalagin, A. M.

    2018-06-01

    A mechanism for the segregation of calcium isotopes in the atmospheres of chemically peculiar (CP) stars due to light-induced drift (LID) of singly charged 48Ca+ ions is discussed. One peculiarity of Ca+ is that an adequate description of the effect of LID requires taking into account several energy levels of Ca+, and thus several pairs of relative differences ( ν i - ν k )/ ν i for the transport frequencies for collisions of levels i and k with neutral atoms (hydrogen, helium). The known real (calculated ab initio) interaction potentials are used to numerically calculate the factors ( ν i - ν k )/ ν i for several states of Ca+ for collisions with H and He atoms. These computations show that, at the temperatures characteristic of the atmospheres of CP stars, T = 6600-12 000 K, fairly high values are obtained for Ca+ ions, ( ν i - ν k )/ ν i ≈ 0.4-0.6. Simple, transparent computations demonstrate that the LID rates of Ca+ ions in the atmospheres of cool CP stars ( T eff = 6600 K) exceed the drift rate due to light pressure by two orders of magnitude. The LID is directed upward in the stellar atmosphere, and the heavy isotope 48Ca is pushed into upper layers of the atmosphere. This can explain the observed predominance of the heavy isotope 48Ca in the upper atmospheric layers of CP stars; according to the radiative-diffusion theory, the action of light pressure alone (in the absence of LID) would lead to sinking of the isotope 48Ca deeper into stellar atmosphere, following the lighter main isotope 40Ca. The 48Ca+ LIDrate decreases and its drift rate due to light pressure increases with growth of the effective temperatures in the atmospheres of CP stars. The manifestations of LID and light pressure are roughly comparable in the atmospheres of CP stars with effective temperatures near T eff = 9500 K.

  8. Disease-causing mitochondrial heteroplasmy segregated within induced pluripotent stem cell clones derived from a patient with MELAS.

    Folmes, Clifford D L; Martinez-Fernandez, Almudena; Perales-Clemente, Ester; Li, Xing; McDonald, Amber; Oglesbee, Devin; Hrstka, Sybil C; Perez-Terzic, Carmen; Terzic, Andre; Nelson, Timothy J

    2013-07-01

    Mitochondrial diseases display pathological phenotypes according to the mixture of mutant versus wild-type mitochondrial DNA (mtDNA), known as heteroplasmy. We herein examined the impact of nuclear reprogramming and clonal isolation of induced pluripotent stem cells (iPSC) on mitochondrial heteroplasmy. Patient-derived dermal fibroblasts with a prototypical mitochondrial deficiency diagnosed as mitochondrial encephalomyopathy with lactic acidosis and stroke-like episodes (MELAS) demonstrated mitochondrial dysfunction with reduced oxidative reserve due to heteroplasmy at position G13513A in the ND5 subunit of complex I. Bioengineered iPSC clones acquired pluripotency with multilineage differentiation capacity and demonstrated reduction in mitochondrial density and oxygen consumption distinguishing them from the somatic source. Consistent with the cellular mosaicism of the original patient-derived fibroblasts, the MELAS-iPSC clones contained a similar range of mtDNA heteroplasmy of the disease-causing mutation with identical profiles in the remaining mtDNA. High-heteroplasmy iPSC clones were used to demonstrate that extended stem cell passaging was sufficient to purge mutant mtDNA, resulting in isogenic iPSC subclones with various degrees of disease-causing genotypes. On comparative differentiation of iPSC clones, improved cardiogenic yield was associated with iPSC clones containing lower heteroplasmy compared with isogenic clones with high heteroplasmy. Thus, mtDNA heteroplasmic segregation within patient-derived stem cell lines enables direct comparison of genotype/phenotype relationships in progenitor cells and lineage-restricted progeny, and indicates that cell fate decisions are regulated as a function of mtDNA mutation load. The novel nuclear reprogramming-based model system introduces a disease-in-a-dish tool to examine the impact of mutant genotypes for MELAS patients in bioengineered tissues and a cellular probe for molecular features of individual

  9. New bonding configuration on Si(111) and Ge(111) surfaces induced by the adsorption of alkali metals

    Lottermoser, L.; Landemark, E.; Smilgies, D.M.

    1998-01-01

    The structure of the (3×1) reconstructions of the Si(111) and Ge(111) surfaces induced by adsorption of alkali metals has been determined on the basis of surface x-ray diffraction and low-energy electron diffraction measurements and density functional theory. The (3×1) surface results primarily f...... from the substrate reconstruction and shows a new bonding configuration consisting of consecutive fivefold and sixfold Si (Ge) rings in 〈11̅ 0〉 projection separated by channels containing the alkali metal atoms. © 1998 The American Physical Society...

  10. Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

    Messaddeq, S. H.; Li, M. S.; Ležal, Dimitrij; Messaddeq, Y.

    2002-01-01

    Roč. 4, č. 2 (2002), s. 375-380 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z4032918 Keywords : light-induced effects * chalcogenide glasses * relief gratings Subject RIV: CA - Inorganic Chemistry Impact factor: 0.446, year: 2002

  11. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

    Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

    2016-01-28

    We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

  12. Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6

    Lin, Zhisheng; Lohmann, Mark; Ali, Zulfikhar A.; Tang, Chi; Li, Junxue; Xing, Wenyu; Zhong, Jiangnan; Jia, Shuang; Han, Wei; Coh, Sinisa; Beyermann, Ward; Shi, Jing

    2018-05-01

    The anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, is investigated under an applied hydrostatic pressure up to 2 GPa. The easy-axis direction of the magnetization is inferred from the AMR saturation feature in the presence and absence of an applied pressure. At zero applied pressure, the easy axis is along the c direction or perpendicular to the layer. Upon application of a hydrostatic pressure > 1 GPa, the uniaxial anisotropy switches to easy-plane anisotropy which drives the equilibrium magnetization from the c axis to the a b plane at zero magnetic field, which amounts to a giant magnetic anisotropy energy change (> 100%). As the temperature is increased across the Curie temperature, the characteristic AMR effect gradually decreases and disappears. Our first-principles calculations confirm the giant magnetic anisotropy energy change with moderate pressure and assign its origin to the increased off-site spin-orbit interaction of Te atoms due to a shorter Cr-Te distance. Such a pressure-induced spin reorientation transition is very rare in three-dimensional ferromagnets, but it may be common to other layered ferromagnets with similar crystal structures to CGT, and therefore offers a unique way to control magnetic anisotropy.

  13. Mitotic spindle defects and chromosome mis-segregation induced by LDL/cholesterol-implications for Niemann-Pick C1, Alzheimer's disease, and atherosclerosis.

    Antoneta Granic

    Full Text Available Elevated low-density lipoprotein (LDL-cholesterol is a risk factor for both Alzheimer's disease (AD and Atherosclerosis (CVD, suggesting a common lipid-sensitive step in their pathogenesis. Previous results show that AD and CVD also share a cell cycle defect: chromosome instability and up to 30% aneuploidy-in neurons and other cells in AD and in smooth muscle cells in atherosclerotic plaques in CVD. Indeed, specific degeneration of aneuploid neurons accounts for 90% of neuronal loss in AD brain, indicating that aneuploidy underlies AD neurodegeneration. Cell/mouse models of AD develop similar aneuploidy through amyloid-beta (Aß inhibition of specific microtubule motors and consequent disruption of mitotic spindles. Here we tested the hypothesis that, like upregulated Aß, elevated LDL/cholesterol and altered intracellular cholesterol homeostasis also causes chromosomal instability. Specifically we found that: 1 high dietary cholesterol induces aneuploidy in mice, satisfying the hypothesis' first prediction, 2 Niemann-Pick C1 patients accumulate aneuploid fibroblasts, neurons, and glia, demonstrating a similar aneugenic effect of intracellular cholesterol accumulation in humans 3 oxidized LDL, LDL, and cholesterol, but not high-density lipoprotein (HDL, induce chromosome mis-segregation and aneuploidy in cultured cells, including neuronal precursors, indicating that LDL/cholesterol directly affects the cell cycle, 4 LDL-induced aneuploidy requires the LDL receptor, but not Aß, showing that LDL works differently than Aß, with the same end result, 5 cholesterol treatment disrupts the structure of the mitotic spindle, providing a cell biological mechanism for its aneugenic activity, and 6 ethanol or calcium chelation attenuates lipoprotein-induced chromosome mis-segregation, providing molecular insights into cholesterol's aneugenic mechanism, specifically through its rigidifying effect on the cell membrane, and potentially explaining why ethanol

  14. Investigation of irradiation induced inter-granular stress corrosion cracking susceptibility on austenitic stainless steels for PWR by simulated radiation induced segregation materials

    Yonezawa, Toshio; Fujimoto, Koji; Kanasaki, Hiroshi; Iwamura, Toshihiko [Mitsubishi Heavy Industries Ltd., Takasago R and D Center, Takasago, Hyogo (Japan); Nakada, Shizuo; Ajiki, Kazuhide [Mitsubishi Heavy Industries Ltd., Kobe Shipyard and Machinery Works, Kobe, Hyogo (Japan); Urata, Sigeru [General Office of Nuclear and Fossil Power Production, Kansai Electric Power Co., Inc., Osaka (Japan)

    2000-07-01

    An Irradiation Assisted Stress Corrosion Cracking (IASCC) has not been found in Pressurized Water Reactors (PWRs). However, the authors have investigated on the possibility of IASCC so as to be able to estimate the degradation of PWR plants up to the end of their lifetime. In this study, the authors melted the test alloys whose bulk compositions simulated the grain boundary compositions of irradiated Type 304 and Type 316 CW stainless steels. Low chromium, high nickel and silicon (12%Cr-28%Ni-3%Si) steel showed high susceptibility to PWSCC (Primary Water Stress Corrosion Cracking) by SSRT (Slow Strain Rate Tensile) test in simulated PWR primary water. PWSCC susceptibility of the test steels increases with a decrease of chromium content and a increase of nickel and silicon contents. The aged test steel included coherent M{sub 23}C{sub 6} carbides with matrices at the grain boundaries showed low PWSCC susceptibility. This tendency is in very good agreement with that of the PWSCC susceptibility of nickel based alloys X-750 and 690. From these results, if there is the possibility of IASCC for austenitic stainless steels in PWRs, in the future, the IASCC shall be caused by the PWSCC as a result of irradiation induced grain boundary segregation. (author)

  15. Nonequilibrium segregation and phase instability in alloy films during elevated-temperature irradiation in a high-voltage electron microscope

    Lam, N.Q.; Okamoto, P.R.

    1984-05-01

    The effects of defect-production rate gradients, caused by the radial nonuniformity in the electron flux distribution, on solute segregation and phase stability in alloy films undergoing high-voltage electron-microscope (HVEM) irradiation at high temperatures are assessed. Two-dimensional (axially symmetric) compositional redistributions were calculated, taking into account both axial and transverse radial defect fluxes. It was found that when highly focused beams were employed radiation-induced segregation consisted of two stages: dominant axial segregation at the film surfaces at short irradiation times and competitive radial segregation at longer times. The average alloy composition within the irradiated region could differ greatly from that irradiated with a uniform beam, because of the additional atom transport from or to the region surrounding the irradiated zone under the influence of radial fluxes. As a result, damage-rate gradient effects must be taken into account when interpreting in-situ HVEM observations of segregation-induced phase instabilities. The theoretical predictions are compared with experimental observations of the temporal and spatial dependence of segregation-induced precipitation in thin films of Ni-Al, Ni-Ge and Ni-Si solid solutions

  16. Nonequilibrium segregation and phase instability in alloy films during elevated-temperature irradiation in a high-voltage electron microscope

    Lam, N. Q.; Okamoto, P. R.

    1984-05-01

    The effects of defect-production rate gradients, caused by the radial nonuniformity in the electron flux distribution, on solute segregation and phase stability in alloy films undergoing high-voltage electron-microscope (HVEM) irradiation at high temperatures are assessed. Two-dimensional (axially symmetric) compositional redistributions were calculated, taking into account both axial and transverse radial defect fluxes. It was found that when highly focused beams were employed radiation-induced segregation consisted of two stages: dominant axial segregation at the film surfaces at short irradiation times and competitive radial segregation at longer times. The average alloy composition within the irradiated region could differ greatly from that irradiated with a uniform beam, because of the additional atom transport from or to the region surrounding the irradiated zone under the influence of radial fluxes. Damage-rate gradient effects must be taken into account when interpreting in-situ HVEM observations of segregation-induced phase instabilities. The theoretical predictions are compared with experimental observations of the temporal and spatial dependence of segregation-induced precipitation in thin films of Ni-Al, Ni-Ge and Ni-Si solid solutions.

  17. Percolation-fission model study of the fragment mass distribution for the 1 GeV proton induced reaction

    Katsuma, Masahiko; Kobayashi, Hiroshi; Sawada, Tetsuo; Sasa, Toshinobu

    2005-01-01

    The 1 GeV proton induced reaction on 208 Pb targets is analyzed by using the percolation model combined with the Atchison fission model. The fragment mass distribution and the isotopic production cross sections obtained from our model are compared with the experimental data. The trends of the fragment mass distribution for the 1 GeV proton induced reaction can be reproduced by our calculation in some degree. The order of magnitude for the calculated isotopic production cross sections at the calculated peak positions is similar to that of the experimental peak values. The calculated peak positions of the isotopic production cross sections are shifted to the heavier region than those of the experimental data. (author)

  18. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  19. Gamma-ray background induced in a double Ge (Li) spectrometer at ballon altitudes in the hemisphere

    Bui-Van, N.A.; Braga, J.; Jardim, J.O.D.; Vedrenne, G.

    1986-02-01

    A double coaxil Ge(li) spetrometer has been flown for the first time in December, from the Southern Hemisphere and the induced background at ceiling in the diodes was studied. During the flight, different anti-coincidence modes were operated to estimate the gamma-ray lines. The results of 511 Kev line show that the fluxes detected by the upper diode are in good agreement with previous measurements, and indicate a probable contamination of the lower diode. (Author) [pt

  20. Influence of Ge addition on the morphology and properties of TiN thin films deposited by magnetron sputtering

    Sandu, C.S.; Sanjines, R.; Benkahoul, M.; Parlinska-Wojtan, M.; Karimi, A.; Levy, F.

    2006-01-01

    Thin films of TM-X-N (TM stands for early transition metal and X = Si, Al, etc.) are used as protective coatings. The most investigated among the ternary composite systems is Ti-Si-N. The system Ti-Ge-N has been chosen to extend the knowledge about the formation of nanocomposite films. Ti-Ge-N thin films were deposited by reactive magnetron sputtering on Si and WC-Co substrates at T s = 240 deg. C, from confocal Ti and Ge targets in mixed Ar/N 2 atmosphere. The nitrogen partial pressure and the power on the Ti target were kept constant, while the power on the Ge target was varied in order to obtain various Ge concentrations in the films. No presence of Ge-N bonds was detected, while X-ray photoelectron spectroscopy measurements revealed the presence of Ti-Ge bonds. Transmission Electron Microscopy investigations have shown important changes induced by Ge addition in the morphology and structure of Ti-Ge-N films. Electron Energy-Loss Spectrometry study revealed a significant increase of Ge content at the grain boundaries. The segregation of Ge atoms to the TiN crystallite surface appears to be responsible for limitation of crystal growth and formation of a TiGe y amorphous phase

  1. Isomeric cross sections of neutron induced reactions on Ge and Ir isotopes

    Vlastou, R.; Papadopoulos, C.T.; Kokkoris, M.; Perdikakis, G.; Galanopoulos, S.; Patronis, N.; Serris, M.; Perdikakis, G.; Harissopulos, S.; Demetriou, P.

    2008-01-01

    The 72 Ge(n,α) 69m Zn, 74 Ge(n,α) 71m Zn, 76 Ge(n,2n) 75g+m Ge and 191 Ir(n,2n) 190 Ir g+m1 and 191 Ir(n,2n) 190 Ir m2 reaction cross sections were measured from 9.6 to 11.4 MeV relative to the 27 Al(n,α) 24 Na reference reaction via the activation method. The quasi-monoenergetic neutron beams were produced via the 2 H(d,n) 3 He reaction at the 5 MV VdG Tandem T11/25 accelerator of NCSR 'Demokritos'. Statistical model calculations using the codes STAPRE-F and EMPIRE (version 2.19) and taking into account pre-equilibrium emission were performed on the data measured in this work as well as on data reported in literature. (authors)

  2. Surface Segregation in YSZ

    Bay, Lasse; Zachau-Christiansen, Birgit; Jacobsen, Torben

    1998-01-01

    The space charge layer formed due to segregation of yttria and oxygen ion vacancies in YSZ is described by a simple model. Effects of impurities segregation are omitted.......The space charge layer formed due to segregation of yttria and oxygen ion vacancies in YSZ is described by a simple model. Effects of impurities segregation are omitted....

  3. Investigation of the production of slow particles in 60 A GeV 16O induced nuclear emulsion reaction

    Zhang Donghai

    2001-01-01

    The multiplicity distributions and correlations of grey track producing particles (N g ), black track producing particles (N b ) and heavy track producing particles (N h ) have been studied in 60 A GeV 16 O induced nuclear emulsion reaction. The multiplicity distributions of grey particles, black particles and heavy track producing particles can be reproduced by FRITIOF (version 1.7) taking cascade mechanism in to account and DTUNUC2.0 with an incident energy of 200 A GeV. The mean multiplicity of black particles (N b ) increases with the number of grey particle N g up to 10 and then exhibits a saturation for peripheral, central and mini-bias events; the average values of grey particles g > (heavy track producing particles h > increase with increasing values of black particle N b (grey particle N g )

  4. Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

    Higashi, H.; Kudo, K.; Yamamoto, K.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

    2018-06-01

    We study the electrical properties of pseudo-single-crystalline Ge (PSC-Ge) films grown by a Au-induced layer exchange crystallization method at 250 °C. By inserting the SiNx layer between PSC-Ge and SiO2, we initiatively suppress the influence of the Ge/SiO2 interfacial defective layers, which have been reported in our previous works, on the electrical properties of the PSC-Ge layers. As a result, we can detect the influence of the ionized Au+ donors on the temperature-dependent hole concentration and Hall mobility. To further examine their electrical properties in detail, we also fabricate p-thin-film transistors (TFTs) with the PSC-Ge layer. Although the off-state leakage currents are suppressed by inserting the SiNx layer, the value of on/off ratio remains poor (leakage current although a nominal field effect mobility is enhanced up to ˜25 cm2/V s. Considering these features, we conclude that the Au contaminations into the PSC-Ge layer can affect the electrical properties and device performances despite a low-growth temperature of 250 °C. To achieve further high-performance p-TFTs, we have to suppress the Au contaminations into PSC-Ge during the Au-induced crystallization growth.

  5. Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

    Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

    2013-12-27

    The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.

  6. DEM study of the size-induced segregation dynamics of a ternary-size granular mixture in the rolling-regime rotating drum

    Yang, Shiliang; Zhang, Liangqi; Luo, Kun; Chew, Jia Wei

    2017-12-01

    Segregation induced by size, shape, or density difference of the granular material is inevitable in both natural and industrial processes; unfortunately, the underlying mechanism is still not fully understood. In view of the ubiquitous continuous particle size distributions, this study builds on the considerable knowledge gained so far from binary-size mixtures and extends it to a ternary-size mixture to understand the impact of the presence of a third particle size in the three-dimensional rotating drum operating in the rolling flow regime. The discrete element method is employed. The evolution of segregation, the active-passive interface, and the dynamical response of the particle-scale characteristics of the different particle types in the two regions are investigated. The results reveal that the medium particles are spatially sandwiched in between the large and small particles in both the radial and axial directions and therefore exhibit behaviors intermediate to the other two particle types. Compared to the binary-size mixture, the presence of the medium particles leads to (i) higher purity of small particles in the innermost of the radial core, causing a decrease of the translational velocity of small particles; (ii) decrease and increase of the collision forces exerted on, respectively, the large and small particles in both regions; and (iii) increase in the relative ratio of the active-passive exchange rates of small to large particles. The results obtained in the current study therefore provide valuable insights regarding the size-segregation dynamics of granular mixtures with constituents of different sizes.

  7. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  8. Complete disintegration of heavy nuclei induced by 340 GeV negative pions

    Ahmad, T.; Tariq, M.; Irfan, M.; Zafar, M.; Ahsan, M.Z.; Shafi, M.

    1989-01-01

    The total disintegration of AgBr nuclei caused by 340 GeV negative pions is investigated. The probability of this phenomena depends on the energy of the pion projectile. The angular distributions of grey and black tracks are investigated. Results for the rapidity gap correlation in these catastrophic destructions are also presented. (author). 17 refs., 5 tabs., 9 figs

  9. Excitations of the field-induced quantum soliton lattice in CuGeO3

    Enderle, M.; Rønnow, H.M.; McMorrow, D.F.

    2001-01-01

    The incommensurate magnetic soliton lattice in the high-field phase of a spin-Peierls system results from quantum fluctuations. We have used neutron scattering techniques to study CuGeO3, allowing us to obtain the first complete characterization of the excitations of the soliton lattice. Three...

  10. Size-induced enhancement of bulk modulus and transition pressure of nanocrystalline Ge

    Wang, Hua; Liu, J.F.; He, Yongqi

    2007-01-01

    In situ energy dispersive X-ray diffraction measurements with synchrotron radiation source have been performed on nanocrystalline Ge with particle sizes 13, 49 and 100 nm by using diamond anvil cell. Whereas the percentage volume collapse at the transition is almost constant, the values of the bu...

  11. The field-induced soliton phase of CuGeO3

    Rønnow, H.M.; Mechthild, E.; McMorrow, D.F.

    2003-01-01

    The quasi-1D S = 1/2 antiferromagnet CuGeO3 undergoes a spin-Peierls transition to a dimerised singlet quantum ground state, with S = 1 carrying pairs of domain walls as elementary excitations. Applying a large magnetic field, the domain walls-solitons-can be condensed into the ground state...

  12. Fragment production in 12-GeV proton-induced reactions

    Hirata, Yuichi; Ohnishi, Akira; Ohtsuka, Naohiko; Nara, Yasushi; Niida, Koji; Chiba, Satoshi; Takada, Hiroshi

    2000-01-01

    We study mass and angular distribution of Intermediate Mass Fragment (IMF) produced from p(12 GeV)+ 197 Au reaction by using JAM cascade model combined with percolation model. Although the mass distribution of IMF is well reproduced, the experimentally observed sideward peak of IMF angular distribution is not explained within present JAM + percolation model. (author)

  13. Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

    Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

    We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

  14. Growth model and structure evolution of Ag layers deposited on Ge films.

    Ciesielski, Arkadiusz; Skowronski, Lukasz; Górecka, Ewa; Kierdaszuk, Jakub; Szoplik, Tomasz

    2018-01-01

    We investigated the crystallinity and optical parameters of silver layers of 10-35 nm thickness as a function 2-10 nm thick Ge wetting films deposited on SiO 2 substrates. X-ray reflectometry (XRR) and X-ray diffraction (XRD) measurements proved that segregation of germanium into the surface of the silver film is a result of the gradient growth of silver crystals. The free energy of Ge atoms is reduced by their migration from boundaries of larger grains at the Ag/SiO 2 interface to boundaries of smaller grains near the Ag surface. Annealing at different temperatures and various durations allowed for a controlled distribution of crystal dimensions, thus influencing the segregation rate. Furthermore, using ellipsometric and optical transmission measurements we determined the time-dependent evolution of the film structure. If stored under ambient conditions for the first week after deposition, the changes in the transmission spectra are smaller than the measurement accuracy. Over the course of the following three weeks, the segregation-induced effects result in considerably modified transmission spectra. Two months after deposition, the slope of the silver layer density profile derived from the XRR spectra was found to be inverted due to the completed segregation process, and the optical transmission spectra increased uniformly due to the roughened surfaces, corrosion of silver and ongoing recrystallization. The Raman spectra of the Ge wetted Ag films were measured immediately after deposition and ten days later and demonstrated that the Ge atoms at the Ag grain boundaries form clusters of a few atoms where the Ge-Ge bonds are still present.

  15. DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.

    Dash, J K; Rath, A; Juluri, R R; Raman, P Santhana; Müller, K; Rosenauer, A; Satyam, P V

    2011-04-06

    We report the growth of Ge nanostructures and microstructures on ultraclean, high vicinal angle silicon surfaces and show that self-assembled growth at optimum thickness of the overlayer leads to interesting shape transformations, namely from nanoparticle to trapezoidal structures, at higher thickness values. Thin films of Ge of varying thickness from 3 to 12 ML were grown under ultrahigh vacuum conditions on a Si(5 5 12) substrate while keeping the substrate at a temperature of 600 °C. The substrate heating was achieved by two methods: (i) by heating a filament under the substrate (radiative heating, RH) and (ii) by passing direct current through the samples in three directions (perpendicular, parallel and at 45° to the (110) direction of the substrate). We find irregular, more spherical-like island structures under RH conditions. The shape transformations have been found under DC heating conditions and for Ge deposition more than 8 ML thick. The longer sides of the trapezoid structures are found to be along (110) irrespective of the DC current direction. We also show the absence of such a shape transformation in the case of Ge deposition on Si(111) substrates. Scanning transmission electron microscopy measurements suggested the mixing of Ge and Si. This has been confirmed with a quantitative estimation of the intermixing using Rutherford backscattering spectrometry (RBS) measurements. The role of DC heating in the formation of aligned structures is discussed. Although the RBS simulations show the presence of a possible SiO(x) layer, under the experimental conditions of the present study, the oxide layer would not play a role in determining the formation of the various structures that were reported here.

  16. Localized atomic segregation in the spalled area of a Zr50Cu40Al10 bulk metallic glasses induced by laser-shock experiment

    Jodar, B.; Loison, D.; Yokoyama, Y.; Lescoute, E.; Nivard, M.; Berthe, L.; Sangleboeuf, J.-C.

    2018-02-01

    Laser-shock experiments were performed on a ternary {Zr50{Cu}40{Al}10} bulk metallic glass. A spalling process was studied through post-mortem analyses conducted on a recovered sample and spall. Scanning electron microscopy magnification of fracture surfaces revealed the presence of a peculiar feature known as cup-cone. Cups are found on sample fracture surface while cones are observed on spall. Two distinct regions can be observed on cups and cones: a smooth viscous-like region in the center and a flat one with large vein-pattern in the periphery. Energy dispersive spectroscopy measurements conducted on these features emphasized atomic distribution discrepancies both on the sample and spall. We propose a mechanism for the initiation and the growth of these features but also a process for atomic segregation during spallation. Cup and cones would originate from cracks arising from shear bands formation (softened paths). These shear bands result from a quadrupolar-shaped atomic disorder engendered around an initiation site by shock wave propagation. This disorder turns into a shear band when tensile front reaches spallation plane. During the separation process, temperature gain induced by shock waves and shear bands generation decreases material viscosity leading to higher atomic mobility. Once in a liquid-like form, atomic clusters migrate and segregate due to inertial effects originating from particle velocity variation (interaction of release waves). As a result, a high rate of copper is found in sample cups and high zirconium concentration is found on spall cones.

  17. The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

    Aleksandrov, O. V.

    2006-01-01

    A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R m clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO n (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient

  18. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  19. Pressure-induced drastic collapse of a high oxygen coordination shell in quartz-like α-GeO2

    Dong, Juncai; Zhang, Xiaoli; Wu, Ziyu; Chen, Dongliang; Zhang, Qian; Wu, Ye; Wu, Xiang

    2014-01-01

    With the combination of a single crystal diamond anvil cell and a polycapillary half-lens, the local structural evolution around germanium in tetrahedrally networked quartz-like α-GeO 2 has been investigated using extended x-ray absorption fine structure spectroscopy of up to 14 GPa by multiple-scattering analysis method. While the first shell Ge–O bond distances show a slight contraction with increasing pressure, the third shell Ge–O bond distances are found to decrease dramatically. The sluggish lengthening of the first shell Ge–O bond distances, initiated by coordination increase from fourfold to sixfold, occurs in the 7–14 GPa range just when the third shell Ge–O bond distances fall in the region of the second shell Ge–Ge bond distances. Moreover, these features are accompanied by the closing of intertetrahedral Ge–O–Ge angles and the opening of two intratetrahedral O–Ge–O angles, whose topological configuration surprisingly exhibits a helical chirality along the c axis that is opposite to the double helices of the corner-linked GeO 4 tetrahedra. These results suggest that the high-pressure phase transitions in quartz and quartz-like materials could be associated with a structural instability that is driven by the drastic collapse of the next-nearest-neighbour anion shell, which is consistent with the emergence of high-symmetry anion sublattice. Our findings provide crucial insights into the densification mechanisms of quartz-like oxides, which would have broad implications for our understanding of the metastability of various post-quartz crystalline phases and pressure-induced amorphization. (paper)

  20. Adjusted NIEL calculations for estimating proton-induced degradation of GaInP/GaAs/Ge space solar cells

    Lu Ming; Wang Rong; Liu Yunhong; Hu Wentao; Feng Zhao; Han Zhaolei

    2011-01-01

    The non-ionizing energy loss (NIEL) values for protons in solar cells should be modified by taking into account the distribution of the Bragg damage peak in the active region to calculate the corresponding displacement damage dose. In this paper, based upon a thin target approximation, a new approach is presented to modify NIEL values for protons on a GaAs sub-cell. Adjusted NIEL values can be used to estimate the degradation induced by protons on GaInP/GaAs/Ge triple-junction space solar cells.

  1. Laser induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} chalcogenide nano colloids

    Tintu, R., E-mail: tintu_tillanivas@yahoo.co.in [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India); Nampoori, V.P.N.; Radhakrishnan, P.; Thomas, Sheenu [International School of Photonics, Cochin University of Science and Technology, Cochin 689110 (India); Unnikrishnan, N.V. [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686560 (India)

    2013-04-01

    We report the observation of two-photon induced photoluminescence from Ge{sub 28}Se{sub 60}Sb{sub 12} nano colloid solutions using frequency doubled Nd:YAG laser. Quadratic emission intensity dependence verifies the two photon absorption for the observed luminescence at an excitation of 532 nm. The optical band gap of the material is found to be tunable depending on the cluster size of the nano colloids. The cluster formation and the dependence of the cluster size with concentration were confirmed by the SEM analysis. Confocal imaging was done to confirm the emission from the clusters in the nano colloid solutions.

  2. Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires.

    Persichetti, Luca; Sgarlata, Anna; Mori, Stefano; Notarianni, Marco; Cherubini, Valeria; Fanfoni, Massimo; Motta, Nunzio; Balzarotti, Adalberto

    2014-01-01

    We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain. 81.07.Gf; 68.35.bg; 68.35.bj; 62.23.Eg.

  3. Oxygen induced reactions at 200 and 60 GeV/nucleon

    Schmidt, H.R.; Albrecht, R.; Claesson, G.; Bock, R.; Gutbrod, H.H.; Kolb, B.W.; Lund, I.; Siemiarczuk, T.; Awes, T.C.; Baktash, C.; Ferguson, R.L.; Johnson, J.W.; Lee, I.Y.; Obenshain, F.E.; Plasil, F.; Sorensen, S.P.; Young, G.R.; Beckmann, P.; Berger, F.; Dragon, L.; Glasow, R.; Kampert, K.H.; Loehner, H.; Peitzmann, T.; Purschke, M.; Santo, R.; Franz, A.; Kristiansson, P.; Poskanzer, A.M.; Ritter, H.G.; Garpman, S.; Gustafsson, H.A.; Oskarsson, A.; Otterlund, I.; Persson, S.; Stenlund, E.

    1987-10-01

    In November 1987, 16 O beams of 200 and 60 GeV/nucleon, were delivered to five major experiments at the CERN SPS simultaneously. This opened for the first time the possibility to study ultra-relativistic heavy-ion collisions and to investigate the possible existence of a transition to the quark-gluon plasma under controlled conditions in the laboratory. (orig./HSI)

  4. Gender Segregation Small Firms

    Kenneth R Troske; William J Carrington

    1992-01-01

    This paper studies interfirm gender segregation in a unique sample of small employers. We focus on small firms because previous research on interfirm segregation has studied only large firms and because it is easier to link the demographic characteristics of employers and employees in small firms. This latter feature permits an assessment of the role of employer discrimination in creating gender segregation. Our first finding is that interfirm segregation is prevalent among small employers. I...

  5. Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

    Kasugai, Y.; Takada, H.; Nakashima, H. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    2001-03-01

    An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10{sup 13} for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

  6. Field-induced magnetic instability and quantum criticality in the antiferromagnet CeCu2Ge2.

    Liu, Yi; Xie, Donghua; Wang, Xiaoying; Zhu, Kangwei; Yang, Ruilong

    2016-01-13

    The magnetic quantum criticality in strongly correlated electron systems has been considered to be closely related with the occurrence of unconventional superconductivity. Control parameters such as magnetic field, pressure or chemical doping are frequently used to externally tune the quantum phase transition for a deeper understanding. Here we report the research of a field-induced quantum phase transition using conventional bulk physical property measurements in the archetypal antiferromagnet CeCu2Ge2, which becomes superconductive under a pressure of about 10 GPa with Tc ~ 0.64 K. We offer strong evidence that short-range dynamic correlations start appearing above a magnetic field of about 5 T. Our demonstrations of the magnetic instability and the field-induced quantum phase transition are crucial for the quantum criticality, which may open a new route in experimental investigations of the quantum phase transition in heavy-fermion systems.

  7. Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

    Kasugai, Y.; Takada, H.; Nakashima, H.

    2001-01-01

    An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10 13 for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

  8. Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.; hide

    2009-01-01

    IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

  9. Nuclear Dependence of Proton-Induced Drell-Yan Dimuon Production at 120 GeV at Seaquest

    Dannowitz, Bryan P. [Illinois U., Urbana

    2016-01-01

    A measurement of the atomic mass (A) dependence of p + A → µ+µ- + X Drell-Yan dimuons produced by 120 GeV protons is presented here. The data was taken by the SeaQuest experiment at Fermilab using a proton beam extracted from its Main Injector. Over 61,000 dimuon pairs were recorded with invariant mass 4.2 < Mγ* < 10 GeV and target parton momentum fraction 0.1 ≤ x2 ≤ 0.5 for nuclear targets 1H, 2H, C, Fe, and W . The ratio of dimuon yields per nucleon (Y ) for heavy nuclei versus 2H, RDY = 2 2 Y (A)/Y ( H) ≈ u¯(A)(x)/u¯( H)(x), is sensitive to modifications in the anti-quark sea distributions in nuclei for the case of proton-induced Drell-Yan. The data analyzed here and in the future of SeaQuest will provide tighter constraints on various models that attempt to define the anomalous behavior of nuclear modification as seen in deep inelastic lepton scattering, a phenomenon generally known as the EMC effect.

  10. Neutron yield and induced radioactivity: a study of 235-MeV proton and 3-GeV electron accelerators.

    Hsu, Yung-Cheng; Lai, Bo-Lun; Sheu, Rong-Jiun

    2016-01-01

    This study evaluated the magnitude of potential neutron yield and induced radioactivity of two new accelerators in Taiwan: a 235-MeV proton cyclotron for radiation therapy and a 3-GeV electron synchrotron serving as the injector for the Taiwan Photon Source. From a nuclear interaction point of view, neutron production from targets bombarded with high-energy particles is intrinsically related to the resulting target activation. Two multi-particle interaction and transport codes, FLUKA and MCNPX, were used in this study. To ensure prediction quality, much effort was devoted to the associated benchmark calculations. Comparisons of the accelerators' results for three target materials (copper, stainless steel and tissue) are presented. Although the proton-induced neutron yields were higher than those induced by electrons, the maximal neutron production rates of both accelerators were comparable according to their respective beam outputs during typical operation. Activation products in the targets of the two accelerators were unexpectedly similar because the primary reaction channels for proton- and electron-induced activation are (p,pn) and (γ,n), respectively. The resulting residual activities and remnant dose rates as a function of time were examined and discussed. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  11. Neutron yield and induced radioactivity: a study of 235-MeV proton and 3-GeV electron accelerators

    Hsu, Yung-Cheng; Lai, Bo-Lun; Sheu, Rong-Jiun

    2016-01-01

    This study evaluated the magnitude of potential neutron yield and induced radioactivity of two new accelerators in Taiwan: a 235-MeV proton cyclotron for radiation therapy and a 3-GeV electron synchrotron serving as the injector for the Taiwan Photon Source. From a nuclear interaction point of view, neutron production from targets bombarded with high-energy particles is intrinsically related to the resulting target activation. Two multi-particle interaction and transport codes, FLUKA and MCNPX, were used in this study. To ensure prediction quality, much effort was devoted to the associated benchmark calculations. Comparisons of the accelerators' results for three target materials (copper, stainless steel and tissue) are presented. Although the proton-induced neutron yields were higher than those induced by electrons, the maximal neutron production rates of both accelerators were comparable according to their respective beam outputs during typical operation. Activation products in the targets of the two accelerators were unexpectedly similar because the primary reaction channels for proton- and electron-induced activation are (p,pn) and (γ,n), respectively. The resulting residual activities and remnant dose rates as a function of time were examined and discussed. (authors)

  12. Measurement of associated charm production induced by 400 GeV/c protons

    Akmete, A; Anokhina, A; Aoki, S; Atkin, E; Azorskiy, N; Back, JJ; Bagulya, A; Baranov, A; Barker, GJ; Battistin, M; Bauche, J; Bay, A; Bayliss, V; Bencivenni, G; Berdnikov, AY; Berdnikov, YA; Bertani, M; Betancourt, C; Bezshyiko, I; Bezshyyko, O; Bick, D; Bieschke, S; Blanco, A; Boehm, J; Bogomilov, M; Bondarenko, K; Bonivento, WM; Borburgh, J; Boyarsky, A; Brenner, R; Breton, D; Brundler, R; Bruschi, M; B\\"{u}scher, V; Buonaura, A; Buonocore, L; Buontempo, S; Cadeddu, S; Calcaterra, A; Calviani, M; Campanelli, M; Chau, P; Chauveau, J; Chepurnov, A; Chernyavskiy, M; Choi, K-Y; Chumakov, A; Ciambrone, P; Cornelis, K; Cristinziani, M; Dallavalle, GM; Datwyler, A; D'Ambrosio, N; D'Appollonio, G; De Carvalho Saraiva, J; De Lellis, G; De Roeck, A; De Serio, M; Dedenko, L; Dergachev, P; Di Crescenzo, A; Di Marco, N; Dib, C; Dijkstra, H; Dmitrenko, V; Dmitrievskiy, S; Domenici, D; Donskov, S; Dubreuil, A; Ebert, J; Ehlert, M; Enik, T; Etenko, A; Fabbri, F; Fabbri, L; Fabich, A; Fedin, O; Fedorova, G; Felici, G; Ferro-Luzzi, M; Fini, RA; Fonte, P; Franco, C; Fraser, M; Froeschl, R; Fukuda, T; Galati, G; Gavrilov, G; Gerlach, S; Goddard, B; Golinka-Bezshyyko, L; Golovatiuk, A; Golubkov, D; Golutvin, A; Gorbunov, D; Gorbunov, P; Gorbunov, S; Gorkavenko, V; Gornushkin, Y; Gorshenkov, M; Grachev, V; Graverini, E; Grenard, J-L; Grichine, V; Gruzinskii, N; Guler, A~M; Guz, Yu; Hagner, C; Hakobyan, H; van Herwijnen, E; Hollnagel, A; Hosseini, B; Hushchyn, M; Iaselli, G; Iuliano, A; Jacobsson, R; Jokovi\\'{c}, D; Jonker, M; Kadenko, I; Kamiscioglu, C; Kamiscioglu, M; Karaman, M; Khabibullin, M; Khaustov, G; Khotyantsev, A; Kim, SH; Kim, V; Kim, YG; Kitagawa, N; Ko, J-W; Kodama, K; Kolesnikov, A; Kolev, DI; Kolosov, V; Komatsu, M; Kono, A; Konovalova, N; Korkmaz, MA; Korol, I; Korol'ko, I; Korzenev, A; Kostyukhin, V; Kovalenko, S; Krasilnikova, I; Krivova, K; Kudenko, Y; Kurbatov, P; Kurochka, V; Kuznetsova, E; Lacker, HM; Lai, A; Lanfranchi, G; Lantwin, O; Lauria, A; Lebbolo, H; Lee, KS; Lee, KY; L\\'{e}vy, J-M; Likhacheva, V; Lopes, L; Lyubovitsky, V; Maalmi, J; Magnan, A; Maleev, V; Malinin, A; Manabe, Y; Manfredi, M; Mefodev, A; Mermod, P; Mikado, S; Mikhaylov, Yu; Milstead, DA; Mineev, O; Montanari, A; Montesi, MC; Morishima, K; Movchan, S; Naganawa, N; Nakamura, M; Nakano, T; Nishio, A; Novikov, A; Obinyakov, B; Ogawa, S; Okateva, N; Osborne, J; Ovchynnikov, M; Owtscharenko, N; Owen, PH; Pacholek, P; Paoloni, A; Park, BD; Park, SK; Paparella, R; Pastore, A; Patel, M; Pereyma, D; Perillo-Marcone, A; Petrenko, D; Petridis, K; Podgrudkov, D; Poliakov, V; Polukhina, N; Prokudin, M; Prota, A; Rademakers, A; Rakai, A; Ratnikov, F; Rawlings, T; Razeti, M; Redi, F; Ricciardi, S; Rinaldesi, M; Rodin, Volodymyr; Rodin, Viktor; Roganova, T; Rogozhnikov, A; Rokujo, H; Rosa, G; Rovelli, T; Ruchayskiy, O; Ruf, T; Samoylenko, V; Ull, A~Sanz; Saputi, A; Sato, O; Savchenko, ES; Schliwinski, J; Schmidt-Parzefall, W; Serra, N; Sgobba, S; Shadura, O; Shakin, A; Shaposhnikov, M; Shatalov, P; Shchedrina, T; Shchutska, L; Shevchenko, V; Shibuya, H; Shustov, A; Silverstein, SB; Simone, S; Simoniello, R; Skorokhvatov, M; Smirnov, S; Sohn, JY; Sokolenko, A; Solodko, E; Solovev, V; Starkov, N; Storaci, B; Strolin, P; Sukhonos, D; Suzuki, Y; Takahashi, S; Timiryasov, I; Tioukov, V; Tommasini, D; Torii, M; Tosi, N; Tramontano, F; Treille, D; Tsenov, R; Ulin, S; Ustyuzhanin, A; Uteshev, Z; Vankova-Kirilova, G; Vannucci, F; Venkova, P; Venturi, V; Vilchinski, S; Villa, M; Vincke, Heinz; Vincke, Helmuth; Vlasik, K; Volkov, A; Voronkov, R; Wanke, R; Woo, J-K; Wurm, M; Xella, S; Yilmaz, D; Yilmazer, AU; Yoon, CS; Zaytsev, Yu

    2017-01-01

    An important input for the interpretation of the measurements of the SHiP ex- periment is a good knowledge of the differential charm production cross section, including cascade production. This is a proposal to measure the associated charm production cross section, employing the SPS 400 GeV/c proton beam and a replica of the first two interaction lengths of the SHiP target. The detection of the produc- tion and decay of charmed hadron in the target will be performed through nuclear emulsion films, employed in an Emulsion Cloud Chamber target structure. In order to measure charge and momentum of decay daughters, we intend to build a mag- netic spectrometer using silicon pixel, scintillating fibre and drift tube detectors. A muon tagger will be built using RPCs. An optimization run is scheduled in 2018, while the full measurement will be performed after the second LHC Long Shutdown.

  13. Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses

    Siegel, J.; Schropp, A.; Solis, J.; Afonso, C.N.; Wuttig, M.

    2004-01-01

    The phase transformation dynamics induced in Ge 2 Sb 2 Te 5 films by picosecond laser pulses were studied using real-time reflectivity measurements with subnanosecond resolution. Evidence was found that the thermal diffusivity of the substrate plays a crucial role in determining the ability of the films to crystallize and amorphize. A film/substrate configuration with optimized heat flow conditions for ultrafast phase cycling with picosecond laser pulses was designed and produced. In this system, we achieved reversible phase transformations with large optical contrast (>20%) using single laser pulses with a duration of 30 ps within well-defined fluence windows. The amorphization (writing) process is completed within less than 1 ns, whereas crystallization (erasing) needs approximately 13 ns to be completed

  14. Asymmetry of the cross section of the reaction. gamma. n. --> pi. /sup -/p induced by linearly polarized photons with energies 0. 8--1. 75 GeV

    Adamyan, V.V.; Akopyan, G.G.; Vartapetyan, G.A.; Galumyan, P.I.; Grabskii, V.O.; Karapetyan, V.V.; Karapetyan, G.V.; Oktanyan, V.K.

    1985-10-25

    The asymmetry of the cross section ..sigma.. of the reaction ..gamma..n..--> pi../sup -/p induced by linearly polarized photons in the energy range 0.8--1.75 GeV and at c.m. angles of 45--90/sup 0/ is measured. The measurement results are consistent with the predictions of the existing phenomenological analyses.

  15. Hadron correlations in nuclear reactions with production of cumulative protons induced by π- mesons with momentum of 6.0 GeV/c

    Bayukov, Yu.D.; Vlasov, A.V.; Gavrilov, V.B.

    1981-01-01

    Hardonic correlations were investigated in reactions with the proton backward production induced by 6.0-GeV/c π - mesons on nuclei Be, C, Al, Cu, Cd, Pb, U. The studied correlations indicate an essential role of multiple interactions of the incident particle in production of cumulative protons [ru

  16. dc-Hydrogen plasma induced defects in bulk n-Ge

    Nyamhere, C., E-mail: cloud.nyamhere@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Venter, A.; Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Auret, F.D.; Coelho, S.M.M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-08-01

    Bulk antimony doped germanium (n-Ge) has been exposed to a dc-hydrogen plasma. Capacitance-voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by {approx}a 1.5 orders of magnitude reduction in the free carrier concentration up to depth of {approx}3.2 {mu}m. DLTS and Laplace-DLTS revealed a prominent electron trap 0.30 eV below the conduction (E{sub C} -0.30 eV). The concentration of this trap increased with plasma exposure time. The depth profile for this defect suggested a uniform distribution up to 1.2 {mu}m. Annealing studies show that this trap, attributed to a hydrogen-related complex, is stable up to 200 Degree-Sign C. Hole traps, or vacancy-antimony centers, common in this material after high energy particle irradiation, were not observed after plasma exposure, an indication that this process does not create Frenkel (V-I) pairs.

  17. dc-Hydrogen plasma induced defects in bulk n-Ge

    Nyamhere, C.; Venter, A.; Murape, D.M.; Auret, F.D.; Coelho, S.M.M.; Botha, J.R.

    2012-01-01

    Bulk antimony doped germanium (n-Ge) has been exposed to a dc-hydrogen plasma. Capacitance-voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by ∼a 1.5 orders of magnitude reduction in the free carrier concentration up to depth of ∼3.2 μm. DLTS and Laplace-DLTS revealed a prominent electron trap 0.30 eV below the conduction (E C -0.30 eV). The concentration of this trap increased with plasma exposure time. The depth profile for this defect suggested a uniform distribution up to 1.2 μm. Annealing studies show that this trap, attributed to a hydrogen-related complex, is stable up to 200 °C. Hole traps, or vacancy-antimony centers, common in this material after high energy particle irradiation, were not observed after plasma exposure, an indication that this process does not create Frenkel (V-I) pairs.

  18. Source size and time dependence of multifragmentation induced by GeV 3He beams

    Wang, G.; Kwiatkowski, K.; Bracken, D.S.; Renshaw Foxford, E.; Hsi, W.; Morley, K.B.; Viola, V.E.; Yoder, N.R.; Volant, C.; Legrain, R.; Pollacco, E.C.; Korteling, R.G.; Botvina, A.; Brzychczyk, J.; Breuer, H.

    1999-01-01

    To investigate the source size and time dependence of multifragmentation reactions, small- and large-angle relative velocity correlations between coincident complex fragments have been measured for the 1.8 - 4.8 GeV 3 He+ nat Ag, 197 Au systems. The results support an evolutionary scenario for the fragment emission process in which lighter IMFs (Z approx-lt 6) are emitted from a hot, more dense source prior to breakup of an expanded residue. For the most highly excited residues, for which there is a significant yield of fragments with very soft energy spectra (E/A≤3 MeV), comparisons with an N-body simulation suggest a breakup time of τ∼50 fm/c for the expanded residue. Comparison of these data with both the evolutionary expanding emitting source model and the Copenhagen statistical multifragmentation model shows good agreement for heavier IMF close-quote s formed in the final breakup stage, but only the evolutionary model is successful in accounting for the lighter IMFs. copyright 1999 The American Physical Society

  19. Hydrogen-induced metallization on Ge(1 1 1) c(2 x 8)

    Razado, I.C.; Zhang, H.M.; Hansson, G.V.; Uhrberg, R.I.G.

    2006-01-01

    We have studied hydrogen adsorption on the Ge(1 1 1) c(2 x 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 x 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states

  20. Surface segregation during irradiation

    Rehn, L.E.; Lam, N.Q.

    1985-10-01

    Gibbsian adsorption is known to alter the surface composition of many alloys. During irradiation, four additional processes that affect the near-surface alloy composition become operative: preferential sputtering, displacement mixing, radiation-enhanced diffusion and radiation-induced segregation. Because of the mutual competition of these five processes, near-surface compositional changes in an irradiation environment can be extremely complex. Although ion-beam induced surface compositional changes were noted as long as fifty years ago, it is only during the past several years that individual mechanisms have been clearly identified. In this paper, a simple physical description of each of the processes is given, and selected examples of recent important progress are discussed. With the notable exception of preferential sputtering, it is shown that a reasonable qualitative understanding of the relative contributions from the individual processes under various irradiation conditions has been attained. However, considerably more effort will be required before a quantitative, predictive capability can be achieved. 29 refs., 8 figs

  1. Analysis of the proton-induced reactions at 150 MeV - 24 GeV by high energy nuclear reaction code JAM

    Niita, Koji; Nara, Yasushi; Takada, Hiroshi; Nakashima, Hiroshi; Chiba, Satoshi; Ikeda, Yujiro

    1999-09-01

    We are developing a nucleon-meson transport code NMTC/JAM, which is an upgraded version of NMTC/JAERI. NMTC/JAM implements the high energy nuclear reaction code JAM for the infra-nuclear cascade part. By using JAM, the upper limits of the incident energies in NMTC/JAERI, 3.5 GeV for nucleons and 2.5 GeV for mesons, are increased drastically up to several hundreds GeV. We have modified the original JAM code in order to estimate the residual nucleus and its excitation energy for nucleon or pion induced reactions by assuming a simple model for target nucleus. As a result, we have succeeded in lowering the applicable energies of JAM down to about 150 MeV. In this report, we describe the main components of JAM code, which should be implemented in NMTC/JAM, and compare the results calculated by JAM code with the experimental data and with those by LAHET2.7 code for proton induced reactions from 150 MeV to several 10 GeV. It has been found that the results of JAM can reproduce quite well the experimental double differential cross sections of neutrons and pions emitted from the proton induced reactions from 150 MeV to several 10 GeV. On the other hand, the results of LAHET2.7 show the strange behavior of the angular distribution of nucleons and pions from the reactions above 4 GeV. (author)

  2. Segregation and civic virtue

    Merry, M.S.

    2012-01-01

    In this essay Michael Merry defends the following prima facie argument: that civic virtue is not dependent on integration and in fact may be best fostered under conditions of segregation. He demonstrates that civic virtue can and does take place under conditions of involuntary segregation, but that

  3. Increasing the laser-induced damage threshold of single-crystal ZnGeP{sub 2}

    Zawilski, Kevin T; Setzler, Scott D; Schunemann, Peter G; Pollak, Thomas M [BAE Systems, Advanced Systems and Technology, P.O. Box 868, MER15-1813, Nashua, New Hampshire 03061-0868 (United States)

    2006-11-15

    The laser-induced damage threshold (LIDT) of single-crystal zinc germanium phosphide (ZGP), ZnGeP{sub 2}, was increased to 2 J/cm{sup 2} at 2.05 {mu}m and a 10 kHz pulse rate frequency (double the previously measured value of 1 J/cm{sup 2}). This increased LIDT was achieved by improving the polishing of ZGP optical parametric oscillator crystals. Two different polishing techniques were evaluated. Surfaces were characterized using scanning white-light interferometry to determine rms surface roughness and sample flatness. The photon backscatter technique was used to determine the degree of surface and subsurface damage in the sample induced through the fabrication process. The effect of subsurface damage in the samples was studied by removing different amounts of material during polishing for otherwise identical samples. Statistical LIDT was measured using a high-average-power, repetitively Q-switched Tm,Ho:YLF 2.05 {mu}m pump laser. On average, lower surface roughness and photon backscatter measurements were a good indicator of ZGP samples exhibiting higher LIDT. The removal of more material during polishing significantly improved the LIDT of otherwise identical samples, indicating the importance of subsurface damage defects in the LIDT of ZGP.

  4. The chemistry on a subnanometer scale of radiation-induced precipitation and segregation in fast-neutron irradiated tungsten-rhenium alloys

    Hershitz, R.; Seidman, D.N.

    1984-01-01

    The phenomena of radiation-induced precipitation and segregation have been investigated in W-10 at.% Re and W-25 at.% Re alloys, employing the atom-probe field-ion-microscope technique. The specimens had been irradiated to a fast-neutron fluence of approx.4x10 22 neutrons cm -2 (e>0.1 MeV) at 575, 625 and 675 deg C. This corresponds to 8.6 dpa and an average displacement rate, for the two year irradiation time of 1.4x10 -7 dpa s -1 . In the W-10 at.% Re alloy, coherent, semicoherent and possibly incoherent precipitates with the composition approx.WRe and a disc-shaped morphology -- one or two atomic planes thick -- were detected at a number density of approx.10 16 cm -3 , and a mean diameter of approx.57 A. In the W-25 at.% Re alloy the same precipitates with the composition approx.WRe 3 were detected at a number density of approx.10 17 cm -3 and a mean diameter of 40 A. The semicoherent WRe 3 precipitates were associated with 4 He atoms; that is, they may have been heterogeneously nucleated. None of the other precipitates were associated with either line or planar defects or with any impurity atoms. Therefore, a true homogeneous radiation-induced precipitation occurs in these alloys. In the W-25 at.% Re alloy a two dimensional WRe 3 phase has been observed at a grain boundary. The nucleation of both precipitates in the vicinity of displacement cascades might be produced by primary knock-on atoms. In both cases, the first step in the nucleation is due to the formation of tightly-bound mobile mixed dumbbells which react to form an immobile di-rhenium cluster. Point-defect mechanisms for all the other observations are also discussed

  5. Helium production for 0.8-2.5 GeV proton induced spallation reactions, damage induced in metallic window materials

    Hilscher, D.; Herbach, C.-M.; Jahnke, U.; Tishchenko, V.; Enke, M.; Filges, D.; Goldenbaum, F.; Neef, R.-D.; Nuenighoff, K.; Paul, N.; Schaal, H.; Sterzenbach, G.; Letourneau, A.; Boehm, A.; Galin, J.; Lott, B.; Peghaire, A.; Pienkowski, L.

    2001-01-01

    Production cross-sections for neutrons and charged particles as well as excitation energy distributions in spallation reactions were measured recently by the NESSI-collaboration and have been employed to test different intra nuclear cascade models and the subsequent evaporation. The INCL/GEMINI code, which describes best the experimental data has been employed to calculate the damage cross-sections in Fe and Ta as well as the He/dpa ratio as a function of proton energy. For the same amount of neutron production in a typical target of a spallation neutron source the proton beam induced radiation damage in an Fe window is shown to decrease almost linearly with proton energy. For heavier materials such as Ta a similar decrease of the radiation damage is found only for energies above about 3 GeV

  6. Rapid mass segregation in small stellar clusters

    Spera, Mario; Capuzzo-Dolcetta, Roberto

    2017-12-01

    In this paper we focus our attention on small-to-intermediate N-body systems that are, initially, distributed uniformly in space and dynamically `cool' (virial ratios Q=2T/|Ω| below ˜0.3). In this work, we study the mass segregation that emerges after the initial violent dynamical evolution. At this scope, we ran a set of high precision N-body simulations of isolated clusters by means of HiGPUs, our direct summation N-body code. After the collapse, the system shows a clear mass segregation. This (quick) mass segregation occurs in two phases: the first shows up in clumps originated by sub-fragmentation before the deep overall collapse; this segregation is partly erased during the deep collapse to re-emerge, abruptly, during the second phase, that follows the first bounce of the system. In this second stage, the proper clock to measure the rate of segregation is the dynamical time after virialization, which (for cold and cool systems) may be significantly different from the crossing time evaluated from initial conditions. This result is obtained for isolated clusters composed of stars of two different masses (in the ratio mh/ml=2), at varying their number ratio, and is confirmed also in presence of a massive central object (simulating a black hole of stellar size). Actually, in stellar systems starting their dynamical evolution from cool conditions, the fast mass segregation adds to the following, slow, secular segregation which is collisionally induced. The violent mass segregation is an effect persistent over the whole range of N (128 ≤ N ≤1,024) investigated, and is an interesting feature on the astronomical-observational side, too. The semi-steady state reached after virialization corresponds to a mass segregated distribution function rather than that of equipartition of kinetic energy per unit mass as it should result from violent relaxation.

  7. Fabrication of Coaxial Si(1-x)Ge(x) Heterostructure Nanowires by O(2) Flow-Induced Bifurcate Reactions.

    Kim, Ilsoo; Lee, Ki-Young; Kim, Ungkil; Park, Yong-Hee; Park, Tae-Eon; Choi, Heon-Jin

    2010-06-17

    We report on bifurcate reactions on the surface of well-aligned Si(1-x)Ge(x) nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si(1-x)Ge(x) nanowires were grown in a chemical vapor transport process using SiCl(4) gas and Ge powder as a source. After the growth of nanowires, SiCl(4) flow was terminated while O(2) gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO(2) by the O(2) gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O(2) pressure without any intermediate region and enables selectively fabricated Ge/Si(1-x)Ge(x) or SiO(2)/Si(1-x)Ge(x) coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.

  8. Phase segregation, interfacial intermetallic growth and electromigration-induced failure in Cu/In–48Sn/Cu solder interconnects under current stressing

    Li, Yi; Lim, Adeline B.Y.; Luo, Kaiming; Chen, Zhong; Wu, Fengshun; Chan, Y.C.

    2016-01-01

    The evolution of microstructure in Cu/In–48Sn/Cu solder bump interconnects at a current density of 0.7 × 10"4 A/cm"2 and ambient temperature of 55 °C has been investigated. During electromigration, tin (Sn) atoms migrated from cathode to anode, while indium (In) atoms migrated from anode to cathode. As a result, the segregation of the Sn-rich phase and the In-rich phase occurred. A Sn-rich layer and an In-rich layer were formed at the anode and the cathode, respectively. The accumulation rate of the Sn-rich layer was 1.98 × 10"−"9 cm/s. The atomic flux of Sn was calculated to be approximately 1.83 × 10"1"3 atoms/cm"2s. The product of the diffusivity and the effective charge number of Sn was determined to be approximately 3.13 × 10"−"1"0 cm"2/s. The In–48Sn/Cu IMC showed a two layer structure of Cu_6(Sn,In)_5, adjacent to the Cu, and Cu(In,Sn)_2, adjacent to the solder. Both the cathode IMC and the anode IMC thickened with increasing electromigration time. The IMC evolution during electromigration was strongly influenced by the migration of Cu atoms from cathode to anode and the accumulation of Sn-rich and In-rich layers. During electromigration, the Cu(In,Sn)_2 at the cathode interface thickened significantly, with a spalling characteristic, due to the accumulation of In-rich layer and the migration of Cu atoms - while the Cu(In,Sn)_2 at the anode interface reduced obviously, due to the accumulation of Sn-rich layer. The mechanism of electromigration-induced failure in Cu/In–48Sn/Cu interconnects was the cathode Cu dissolution-induced solder melt, which led to the rapid consumption of Cu in the cathode pad during liquid-state electromigration and this finally led to the failure. - Highlights: • Sn migrates to the anode, while In migrates to the cathode, during EM in Cu/In–48Sn/Cu. • The atomic flux of Sn has been calculated. • The interfacial IMCs were identified as: Cu_6(Sn,In)_5 + Cu(In,Sn)_2. • The interface evolution is strongly

  9. Quantitative and Qualitative Differences in Neurocognitive Impairment Induced by 1 GeV 56Fe Ions and X-Rays

    Britten, R.; Mitchell, S.; Parris, B.; Johnson, A.; Singletary-Britten, S.; Lonart, G.; Drake, R.

    2008-10-01

    During the planned mission to Mars, Astronauts will be exposed to heavy charged particles (Hze). Our group has been determining the relative biological effectiveness (RBE) of Hze (1 GeV 56Fe, LET = 150 kev/um) with respect to neurocognitive impairment, specifically spatial memory, short-term working memory and attentional set shifting. Our current data suggest that Hze have RBE values of about 7 for hippocampal-dependent spatial memory tasks (Barnes Maze) and possibly even higher for certain attentional processes. We have also used MALDI-TOF serum profiling analysis to identify several proteins that are biomarkers of both the level and LET of the radiation exposure, and biomarkers of cognitive performance. Our data suggest that Hze particles have a distinctly different impact upon neurocognitive function in rats than do X-rays. From a mission perspective, attentional set shifting is the neurocognitive function most likely to be impacted by the predicted Hze exposure; unfortunately Set shifting underlies our ability to execute complex plans. The proteins identified could be used to monitor the Astronauts for radiation exposure and any associated loss of neurocognitive function, and some may actually give an insight into the complex processes that lead to radiation-induced cognitive impairment.

  10. Segregation in cast products

    Unknown

    The agreement with experimental data is mostly qualitative. The paper also ... For example, a high degree of positive segregation in the central region .... solute in a cast product, important ones being: size of casting, rate of solidification, mode.

  11. Plasmid segregation mechanisms

    Ebersbach, G.; Gerdes, Kenn

    2005-01-01

    Bacterial plasmids encode partitioning (par) loci that ensure ordered plasmid segregation prior to cell division. par loci come in two types: those that encode actin-like ATPases and those that encode deviant Walker-type ATPases. ParM, the actin-like ATPase of plasmid R1, forms dynamic filaments...... that segregate plasmids paired at mid-cell to daughter cells. Like microtubules, ParM filaments exhibit dynamic instability (i.e., catastrophic decay) whose regulation is an important component of the DNA segregation process. The Walker box ParA ATPases are related to MinD and form highly dynamic, oscillating...... filaments that are required for the subcellular movement and positioning of plasmids. The role of the observed ATPase oscillation is not yet understood. However, we propose a simple model that couples plasmid segregation to ParA oscillation. The model is consistent with the observed movement...

  12. Segregation and Hispanic Homicide

    Michael G. Bisciglia

    2014-01-01

    As the overall population of Hispanics within the United States has eclipsed that of African Americans, a mounting concern has developed regarding the rise in Hispanic lethal violence as a result of social and economic inequality. One means to measure this inequality is in the form of segregation. Research indicates that in many Hispanic communities, their levels of segregation from the White non-Hispanic population ar...

  13. Nuclear stopping in oxygen-induced reactions at 200 A GeV

    Obenshain, F.E.; Albrecht, R.; Awes, T.C.

    1988-01-01

    A primary goal of relativistic heavy-ion studies is to verify the existence of the postulated quark-gluon plasma (QGP). Since most of the possible plasma signatures are indistinguishable from background created by nonplasma events. Thorough understanding of reaction mechanisms is an important prerequisite in any QGP search. To isolate collective features of nucleus-nucleus collisions from those that may be expected on the basis of linear superposition of nucleon-nucleus collisions, we compare measured quantities with calculations that reproduce data from nucleon-induced reactions and that make predictions for nucleus-nucleus reactions. Here we discuss the data obtained from our Zero-Degree Calorimeter (ZDC) and the transverse energy obtained from the Mid-Rapidity Calorimeter (MIRAC). The primary reactions considered are: 16 O + 16 C and 16 O + 197 Au. The measurements show a high degree of nuclear stopping and the energy densities may be large enough to produce a transition to the quark-gluon plasma. 10 refs., 5 figs

  14. The vaccine properties of a Brazilian bovine herpesvirus 1 strain with an induced deletion of the gE gene

    Franco, A.C.; Spilki, F.R.; Roehe, P.M.; Rijsewijk, F.A.M.

    2005-01-01

    Aiming at the development of a differential vaccine (DIVA) against infectious bovine rhinotracheitis (IBR), a Brazilian strain of bovine herpesvirus type 1 (BHV1) with a deletion of the glycoprotein E (gE) gene was constructed (265gE - ). Here we present the experiments performed with this strain in order to evaluate its safety and efficacy as a vaccine virus in cattle. In the first experiment, a group of calves was inoculated with 265gE - and challenged with wild type virus 21 days post-inoculation. Calves immunized with 265gE - virus and challenged with wild type virus developed very mild clinical disease with a significant reduction in the amount of virus excretion and duration. The safety of the 265gE - during pregnancy was assessed using 22 pregnant cows, at different stages of gestation, that were inoculated with the 265gE - virus intramuscularly, with 15 pregnant cows kept as non-vaccinated controls. No abortions, stillbirths or foetal abnormalities were seen after vaccination. The results show that the 265gE - recombinant is attenuated and able to prevent clinical disease upon challenge. This recombinant will be further evaluated as a candidate virus for a BHV1 differential vaccine. (author)

  15. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  16. Source Segregation and Collection of Source-Segregated Waste

    Christensen, Thomas Højlund; Matsufuji, Y.

    2011-01-01

    of optimal handling of the waste. But in a few cases, the waste must also be separated at source, for example removing the protective plastic cover from a commercial advertisement received by mail, prior to putting the advertisement into the waste collection bin for recyclable paper. These issues are often...... in wastes segregation addressing: - Purpose of source segregation. - Segregation criteria and guidance. - Segregation potentials and efficiencies. - Systems for collecting segregated fraction....

  17. Magnetic properties of Gd5(Si1.5Ge2.5) near the temperature and magnetic field induced first order phase transition

    Levin, E.M.; Gschneidner, K.A.; Pecharsky, V.K.

    2001-01-01

    The temperature (from 5 to 300 K) and DC magnetic field (from 0 to 90 kOe) dependencies of the DC magnetization and magnetic susceptibility, and the temperature (from 5 to 350 K) dependency of the AC magnetic susceptibility of Gd 5 (Si 1.5 Ge 2.5 ) have been studied. The temperature and/or magnetic field induced magnetic phase transition in Gd 5 (Si 1.5 Ge 2.5 ) is a first order ferromagnet-paramagnet transition. The temperature of the magnetic transition in low AC magnetic field is 206 and 217 K for cooling and heating, respectively. The DC magnetic field increases the transition temperature by ∼0.36 K/kOe indicating that the paramagnetic phase can be reversibly transformed into the ferromagnetic phase. When the magnetic field is removed, the ferromagnetic phase transforms into the paramagnetic phase showing a large remanence-free hysteresis. The magnetic phase diagram based on the isothermal magnetic field dependence of the DC magnetization at various temperatures for Gd 5 (Si 1.5 Ge 2.5 ) is proposed. The magnetic field dependence of the magnetization in the vicinity of the first order phase transition shows evidence for the formation of a magnetically heterogeneous system in the volume of Gd 5 (Si 1.5 Ge 2.5 ) specimen where the magnetically ordered (ferromagnetic) and disordered (paramagnetic) phases co-exist

  18. PICA95: An intranuclear-cascade code for 25-MeV to 3.5-GeV photon-induced nuclear reactions

    Fu, C.Y.; Gabriel, T.A.; Lillie, R.A.

    1997-01-01

    PICA95, an intranuclear-cascade code for calculating photon-induced nuclear reactions for incident photon energies up to 3.5 GeV, is an extension of the original PICA code package that works for incident photon energies up to 400 MeV. The original code includes the quasi-deuteron breakup and single-pion production channels. The extension to an incident photon energy of 3.5 GeV requires the addition of multiple-pion production channels capable of emitting up to five pions. Relativistic phase-space relations are used to conserve energy and momentum in multi-body breakups. Fermi motion of the struck nucleon is included in the phase-space calculations as well as secondary nuclear collisions of the produced particles. Calculated doubly differential cross sections for the productions of protons, neutrons, π + , π 0 , and π - for incident photon energies of 500 MeV, 1 GeV, and 2 GeV are compared with predictions by other codes. Due to the sparsity of experimental data, more experiments are needed in order to refine the gamma nuclear collision model

  19. Fast-neutron-induced potential background near the Q value of neutrinoless double-β decay of 76Ge

    Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan

    2016-01-01

    The 76Ge (n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.89-keV state of 76Ge , which decays by the emission of a 2040.70-keV γ ray. Using high-purity germanium detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrinoless double-β decay of 76Ge with its Q value of 2039.0 keV. At 20-MeV neutron energy the production cross section of the 2040.70-keV γ ray is approximately 0.1 mb.

  20. Induced Proton Polarization for pi0 Electroproduction at Q2 = 0.126 GeV2/c2 Around the Delta(1232) Resonance

    Glen Warren; Ricardo Alarcon; Christopher Armstrong; Burin Asavapibhop; David Barkhuff; William Bertozzi; Volker Burkert; Chen, J.; Jian-Ping Chen; Joseph Comfort; Daniel Dale; George Dodson; Dolfini, S.; Dow, K.; Martin Epstein; Manouchehr Farkhondeh; John Finn; Shalev Gilad; Ralf Gothe; Xiaodong Jiang; Mark Jones; Kyungseon Joo; Karabarbounis, A.; James Kelly; Stanley Kowalski; Kunz, C.; Liu, D.; Lourie, R.W.; Richard Madey; Demetrius Margaziotis; Pete Markowitz; Justin McIntyre; Mertz, C.; Brian Milbrath; Rory Miskimen; Joseph Mitchell; Mukhopadhyay, S.; Costas Papanicolas; Charles Perdrisat; Vina Punjabi; Liming Qin; Paul Rutt; Adam Sarty; Jeffrey Shaw; Soong, S.B.; Tieger, D.; Christoph Tschalaer; William Turchinetz; Paul Ulmer; Scott Van Verst; Vellidis, C.; Lawrence Weinstein; Steven Williamson; Rhett Woo; Alaen Young

    1998-01-01

    We present a measurement of the induced proton polarization P n in π 0 electroproduction on the proton around the Δ resonance. The measurement was made at a central invariant mass and a squared four-momentum transfer of W = 1231 MeV and Q 2 = 0.126 GeV 2 /c 2 , respectively. We measured a large induced polarization, P n = -0.397 ± 0.055 ± 0.009. The data suggest that the scalar background is larger than expected from a recent effective Hamiltonian model

  1. Photon energy dependence of photo-induced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

    Isella, Giovanni, E-mail: giovanni.isella@polimi.it; Bottegoni, Federico; Ferrari, Alberto; Finazzi, Marco; Ciccacci, Franco [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2015-06-08

    We report the photon energy dependence of photo-induced inverse spin Hall effect (ISHE) in Pt/GaAs and Pt/Ge Schottky junctions. The experimental results are compared with a spin drift-diffusion model, which highlights the role played by the different spin lifetime in the two semiconductors, in determining the energy dependence of the ISHE signal detected in the Pt layer. The good qualitative agreement between experiments and modelling indicates that photo-induced ISHE can be used as a tool to characterize spin lifetime in semiconductors.

  2. Segregation and Hispanic Homicide

    Michael G. Bisciglia

    2014-01-01

    Full Text Available As the overall population of Hispanics within the United States has eclipsed that of African Americans, a mounting concern has developed regarding the rise in Hispanic lethal violence as a result of social and economic inequality. One means to measure this inequality is in the form of segregation. Research indicates that in many Hispanic communities, their levels of segregation from the White non-Hispanic population are similar to that of African Americans. Although a multitude of previous studies have looked at the impact of segregation among African Americans, the literature remains under-represented in terms of multi-city macro-level analyses among Hispanics. This current study extends the analysis of segregation’s effects on lethal violence to this population. To this end, two measures of segregation were used, the index of dissimilarity and exposure. Using data from the census and the Centers for Disease Control (CDC mortality files, negative binominal regression models were created using a sample of 236 U.S. cities. The results indicated that both measures of segregation show a strong positive influence on rates of Hispanic homicides.

  3. Understanding Segregation Processes

    Bruch, Elizabeth

    There is growing consensus that living in neighborhoods of concentrated poverty increases the likelihood of social problems such as teenage parenthood, drug and alcohol use, crime victimization, and chronic unemployment. Neighborhood inequality is also implicated in studies of enduring race/ethnic health disparities, and there are recent moves to broaden the definition of health care policy to policies targeting social inequality (Mechanic 2007). Residential segregation affects health outcomes in several different ways. First, income, education, and occupation are all strongly related to health (Adler and Newman 2002). Segregation is a key mechanism through which socioeconomic inequality is perpetuated and reinforced, as it hinders the upward mobility of disadvantaged groups by limiting their educational and employment opportunities. Second, segregation increases minority exposure to unhealthy neighborhood environments. Residential segregation creates areas with concentrated poverty and unemployment, both of which are key factors that predict violence and create racial differences in homicide (Samson and Wilson 1995). Neighborhood characteristics, such as exposure to environmental hazards, fear of violence, and access to grocery stores, affect health risks and health behaviors (Cheadle et al. 1991). Tobacco and alcohol industries also advertise their products disproportionately in poor, minority areas (Moore, Williams, and Qualls 1996). Finally, residential segregation leads to inequalitie in health care resources, which contributes to disparities in quality of treatment (Smedley, Stith, and Nelson 2002).

  4. Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO{sub 2} layers

    Li, Haofeng; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755 (United States)

    2016-03-07

    We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge{sub 1−x}Sn{sub x} thin films (0.074 < x < 0.085) crystallized on amorphous SiO{sub 2} towards 3D photonic integration. Due to a much smaller Poisson's ratio for (111) vs. (100) orientation, 0.44% thermally induced biaxial tensile strain reduces the direct-gap by 0.125 eV towards enhanced direct-gap semiconductor properties, twice as effective as the tensile strain in Ge(100) films. Correspondingly, the optical response is extended to λ = 2.8 μm. A dilatational deformation potential of a = −12.8 ± 0.8 eV is derived. These GeSn films also demonstrate high thermal stability, offering both excellent direct-gap optoelectronic properties and fabrication/operation robustness for integrated photonics.

  5. Induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1-x Ge x /Si type-II quantum wells

    Sfina, N.; Lazzari, J.-L.; Christol, P.; Cuminal, Y.; Said, M.

    2006-01-01

    We present a numerical modeling of the conduction- and the valence-band diagrams of W designed Si/Si 0.4 Ge 0.6 /Si type II quantum wells. These W structures, strain-compensated on relaxed Si 0.75 Ge 0.25 pseudo-substrates, are potentially interesting for emission and photo-detection around a 1.55μm wavelength. Two main features have been extrapolated by solving self-consistently Schroedinger and Poisson equations, taking into account the electrostatic attraction induced by carrier injection: (i) Coulomb attraction strongly modifies the band profiles and increases the electron probability density at the quantum well interfaces. (ii) The injected carrier concentration enhances the in-plane oscillator strength and the electron-hole wave-function overlap

  6. Probability of ternary fission of 93Nb andnat Ag nuclei induced by 0.8-1.8 GeV photons

    Lima, D.A. de; Milomen, W.C.C.; Tavares, O.A.P.

    1989-01-01

    The yields of ternary fission of 93 Nb and nat Ag nuclei induced by bremsstrahlung photons of 0.8, 1.0, 1.4 and 1.8 GeV end-point energies have been measured by using the 2 Π-forward geometry with thick target metal foils in contact with makrofol polycarbonate sheets as fission-track detectors. Absolute mean cross sections per photon in the range 0.8-1.8 GeV have been obtained as 0.3 ± 0.3 μb and 0.5 ± μb, respectively, for 93 Nb and nat Ag nuclei. These correspond to a probability of ternary fission of approx. 10 -5 for both nuclei. Results are discussed and compared with previous ternary fission data obtained for nuclei of A [pt

  7. Simultaneous characterization of elemental segregation and cementite networks in high carbon steel products by spatially-resolved laser-induced breakdown spectroscopy

    Boué-Bigne, Fabienne, E-mail: fabienne.boue-bigne@tatasteel.com

    2014-06-01

    The reliable characterization of the level of elemental segregation and of the extent of grain-boundary cementite networks in high carbon steel products is a prerequisite for checking product quality, for the purpose of product release to customers, and to investigate the presence of defects that may have led to mechanical property failure of the product. Current methods for the characterization of segregation and cementite networks rely on two different methods of sample etching followed by visual observation, where quality scores are given based on human perception and judgment. With the continuous demand on increasing quality, some of the conventional characterization methods and their associated scoring boards have lost relevance for the precision of characterization that is required today to distinguish between a product that will perform well and one that will not. In order to move away from a qualitative, human perception based situation for the scoring of the severity of segregation and cementite networks, a new method of data evaluation based on spatially-resolved LIBS measurements was developed to provide quantitative and simultaneous characterization of both types of defects. The quantitative assessment of segregation and cementite networks is based on the acquisition of carbon concentration maps. The ability to produce rapid scanning measurements of micro and macro-scale features with adequate spatial resolution makes LIBS the measurement method of preference for this purpose. The characterization of both different defects is extracted simultaneously and from the same carbon concentration map following a series of statistical treatment and data extraction rules. LIBS results were validated against recognized methods and were applied to a significant number of routine samples. The new LIBS method offers a step change improvement in reliability for the characterization of segregation and cementite networks in steel products over the conventional methods

  8. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  9. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  10. Electron pulsed beam induced processing of thin film surface by Nb3Ge deposited into a stainless steel tape

    Vavra, I.; Korenev, S.A.

    1988-01-01

    A surface of superconductive thin film of Nb 3 Ge deposited onto a stainless steel tape was processed using the electron beam technique. The electron beam used had the following parameters: beam current density from 400 to 1000 A/cm 2 ; beam energy 100 keV; beam impulse length 300 ns. By theoretical analysis it is shown that the heating of film surface is an adiabatic process. It corresponds to our experimental data and pictures showing a surface remelting due to electron beam influence. After beam processing the superconductive parameters of the film remain unchanged. Roentgenograms have been analysed of Nb 3 Ge film surface recrystallized due to electron beam influence

  11. Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1-x-yGe xC y film deposited by ultraclean LPCVD

    Shim, Hyunyoung; Sakuraba, Masao; Murota, Junichi

    2006-01-01

    The effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline (poly) Si 1-x -y Ge x C y films was investigated. Poly-Si 1-x -y Ge x C y films were deposited on thermally oxidized Si(100) at 500-650 deg. C in a SiH 4 -GeH 4 -SiH 3 CH 3 -H 2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition. B and P were doped into the films by ion implantation and diffusion by heat-treatment. The electrical properties are characterized by grain size, width of disordered region near grain boundaries, carrier trap density and the amount of impurity segregation at grain boundaries. In the B-doped poly-Si 1-x -y Ge x C y films heat-treated at 900 deg. C, the increase of carrier concentration n poly and the decrease of resistivity ρ poly with Ge addition are caused by the narrowing of the width of disordered regions, i.e., crystallization of disordered regions induced by Ge atoms. The decrease of n poly and the increase of ρ poly with C addition are explained by the suppression of crystallization of disordered region due to C atom segregation at grain boundaries. In the P-doped poly-Si 1-x -y Ge x C y films, it is found that n poly and ρ poly are influenced by P atom segregation at grain boundaries due to lowering solid solubility of P in grain by the existence of Ge

  12. Pressure-induced superconductivity of Ce{sub 2}Ni{sub 3}Ge{sub 5}

    Nakashima, M. [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan) and Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531 (Japan)]. E-mail: mnaka@crystal.phys.sci.osaka-u.ac.jp; Kohara, H. [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Thamizhavel, A. [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Matsuda, T.D. [Advanced Science and Industrial Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki, 319-1195 (Japan); Haga, Y. [Advanced Science and Industrial Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki, 319-1195 (Japan); Hedo, M. [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581 (Japan); Uwatoko, Y. [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581 (Japan); Settai, R. [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Onuki, Y. [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan)

    2006-05-01

    The Neel temperature of Ce{sub 2}Ni{sub 3}Ge{sub 5} decreases with increasing pressure P and becomes zero at a critical pressure P{sub c}{approx}4GPa. The heavy fermion state was found to be formed around P{sub c}, in which pressure region superconductivity was found below 0.26K.

  13. Measurement of 0.8 and 1.5 GeV proton induced neutron production cross sections at 0deg

    Shigyo, Nobuhiro; Kunieda, Satoshi; Watanabe, Takehito; Ishibashi, Kenji; Satoh, Daiki; Meigo, Shin-ichiro

    2004-01-01

    Neutron-production double-differential cross sections at 0deg were measured for proton-induced reactions on Fe and Pb targets at 0.8 and 1.5 GeV. The experiment was performed at the π2 beam line of the 12 GeV proton synchrotron in High Energy Accelerator Research Organization (KEK). Neutrons were measured by time-of-flight technique with two different flight path lengths, i.e. 3.5 and 5.0 m at 0.8 and 1.5 GeV, respectively. NE213 liquid organic scintillators 12.7 cm in diameter and 12.7 cm in thickness were set at 0deg as neutron detector. For the improvement of the energy resolution, the scintillator was connected with three Hamamatsu H2431 photomultipliers 5.1 cm in diameter. The neutron detection efficiencies were obtained by the SCINFUL-QMD code. The experimental data were compared with the calculation results of the intranuclear-cascade-evaporation (INC/E) and the quantum-molecular-dynamics (QMD) models. (author)

  14. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  15. Update on the Code Intercomparison and Benchmark for Muon Fluence and Absorbed Dose Induced by an 18 GeV Electron Beam After Massive Iron Shielding

    Fasso, A. [SLAC; Ferrari, A. [CERN; Ferrari, A. [HZDR, Dresden; Mokhov, N. V. [Fermilab; Mueller, S. E. [HZDR, Dresden; Nelson, W. R. [SLAC; Roesler, S. [CERN; Sanami, t.; Striganov, S. I. [Fermilab; Versaci, R. [Unlisted, CZ

    2016-12-01

    In 1974, Nelson, Kase and Svensson published an experimental investigation on muon shielding around SLAC high-energy electron accelerators [1]. They measured muon fluence and absorbed dose induced by 14 and 18 GeV electron beams hitting a copper/water beamdump and attenuated in a thick steel shielding. In their paper, they compared the results with the theoretical models available at that time. In order to compare their experimental results with present model calculations, we use the modern transport Monte Carlo codes MARS15, FLUKA2011 and GEANT4 to model the experimental setup and run simulations. The results are then compared between the codes, and with the SLAC data.

  16. Light particle production in spallation reactions induced by protons of 0.8-2.5 GeV incident kinetic energy

    Herbach, Claus-Michael; Enke, Michael; Boehm, Andreas

    2002-01-01

    Absolute production cross sections have been measured simultaneously for neutrons and light charged particles in 0.8-2.5 GeV proton induced spallation reactions for a series of target nuclei from aluminum up to uranium. The high detection efficiency both for neutral and charged evaporative particles provides an event-wise access to the amount of projectile energy dissipated into nuclear excitation. Various intra nuclear cascade plus evaporation models have been confronted with the experimental data showing large discrepancies for hydrogen and helium production. (author)

  17. Applied Thermodynamics: Grain Boundary Segregation

    Pavel Lejček

    2014-03-01

    Full Text Available Chemical composition of interfaces—free surfaces and grain boundaries—is generally described by the Langmuir–McLean segregation isotherm controlled by Gibbs energy of segregation. Various components of the Gibbs energy of segregation, the standard and the excess ones as well as other thermodynamic state functions—enthalpy, entropy and volume—of interfacial segregation are derived and their physical meaning is elucidated. The importance of the thermodynamic state functions of grain boundary segregation, their dependence on volume solid solubility, mutual solute–solute interaction and pressure effect in ferrous alloys is demonstrated.

  18. Segregation in Religion Networks

    Hu, Jiantao; Zhang, Qian-Ming; Zhou, Tao

    2018-01-01

    Religious beliefs could facilitate human cooperation [1-6], promote civic engagement [7-10], improve life satisfaction [11-13] and even boom economic development [14-16]. On the other side, some aspects of religion may lead to regional violence, intergroup conflict and moral prejudice against atheists [17-23]. Analogous to the separation of races [24], the religious segregation is a major ingredient resulting in increasing alienation, misunderstanding, cultural conflict and even violence amon...

  19. Segregation by onset asynchrony.

    Hancock, P J B; Walton, L; Mitchell, G; Plenderleith, Y; Phillips, W A

    2008-08-05

    We describe a simple psychophysical paradigm for studying figure-ground segregation by onset asynchrony. Two pseudorandom arrays of Gabor patches are displayed, to left and right of fixation. Within one array, a subset of elements form a figure, such as a randomly curving path, that can only be reliably detected when their onset is not synchronized with that of the background elements. Several findings are reported. First, for most participants, segregation required an onset asynchrony of 20-40 ms. Second, detection was no better when the figure was presented first, and thus by itself, than when the background elements were presented first, even though in the latter case the figure could not be detected in either of the two successive displays alone. Third, asynchrony segregated subsets of randomly oriented elements equally well. Fourth, asynchronous onsets aligned with the path could be discriminated from those lying on the path but not aligned with it. Fifth, both transient and sustained neural activity contribute to detection. We argue that these findings are compatible with neural signaling by synchronized rate codes. Finally, schizophrenic disorganization is associated with reduced sensitivity. Thus, in addition to bearing upon basic theoretical issues, this paradigm may have clinical utility.

  20. Light nuclides produced in the proton-induced spallation of {sup 238}U at 1 GeV

    Ricciardi, M.V.; Armbruster, P. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Benlliure, J. [Universidad de Santiago de Compostela (ES)] [and others

    2005-09-01

    The production of light and intermediate-mass nuclides formed in the reaction {sup 1}H+{sup 238}U at 1 GeV was measured at the fragment separator (FRS) at GSI, Darmstadt. The experiment was performed in inverse kinematics, shooting a 1 A GeV {sup 238}U beam on a thin liquid-hydrogen target. 254 isotopes of all elements in the range 7{<=}Z{<=}37 were unambiguously identified, and the velocity distributions of the produced nuclides were determined with high precision. The results show that the nuclides are produced in a very asymmetric binary decay of heavy nuclei originating from the spallation of uranium. All the features of the produced nuclides merge with the characteristics of the fission products as their mass increases. (orig.)

  1. Evaluation of neutron- and proton-induced cross sections of {sup 27}Al up to 2 GeV

    Lee, Young-Ouk; Chang, Jonghwa [Korea Atomic Energy Research Institute, Yusung, Taejon (Korea, Republic of); Fukahori, Tokio; Chiba, Satoshi

    1999-03-01

    We have evaluated neutron and proton nuclear data of {sup 27}Al for energies up to 2 GeV. The best set of optical model parameters were obtained above 20 MeV for neutron and above reaction threshold for proton up to 250 MeV with the phenomenological potential forms proposed by Chiba. The transmission coefficients for neutron and proton derived from the optical models are fed into the GNASH code system to calculate angle-energy correlated emission spectra for light ejectiles and gamma rays. For energies above 250 MeV and below 2 GeV, the total, reaction and elastic scattering cross sections were evaluated by an empirical fit and recent systematics. Emitted nucleon and pion were estimated by use of QMD + SDM (Quantum Molecular Dynamics + Statistical Decay Model). (author)

  2. Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

    Li, H.; Chang, C.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2016-01-01

    We report an investigation on the absorption mechanism of a GeSn photodetector with 2.4% Sn composition in the active region. Responsivity is measured and absorption coefficient is calculated. Square root of absorption coefficient linearly depends on photon energy indicating an indirect transition. However, the absorption coefficient is found to be at least one order of magnitude higher than that of most other indirect materials, suggesting that the indirect optical absorption transition cannot be assisted only by phonon. Our analysis of absorption measurements by other groups on the same material system showed the values of absorption coefficient on the same order of magnitude. Our study reveals that the strong enhancement of absorption for the indirect optical transition is the result of alloy disorder from the incorporation of the much larger Sn atoms into the Ge lattice that are randomly distributed.

  3. INC Model interpretation of the proton induced residual nuclide production cross sections below 2 GeV

    Divadeenam, M.; Ward, T.E.; Spergel, M.S.; Lakatos, S.; Manche, E.P.

    1991-01-01

    For the purposes of interpreting the abundances of various isotopes in meteorites or on lunar and planetary surfaces exposed to fragmentation by cosmic rays, Webber et al. recently reported the measured total elemental and isotopic cross sections with heavy ions as projectiles on H, He, and C targets with beam energies of 0.33 - 1.7 GeV/nucleon. We employ the INC model to predict the fragmentation of the heavy ions in a hydrogen target with the inverse reaction process: proton bombardment of a heavy-ion nucleus leading to spallation products. Charge-changing and mass-changing cross sections are calculated for proton bombardment of an 56 Fe target with beam energies ranging from 0.33 to 1.88 GeV. Total Z-changing and A-changing cross sections in the energy range 0.6 to 1.88 GeV are in excellent agreement with the corresponding experimental data of Webber et al. and Westfall at al., while the agreement below 0.6 GeV proton energy is not as good. The general trend of the Z-changing cross sections are reproduced by the model calculations at each proton incident energy. The interaction of 200-MeV protons with synthetic Stony Meteorite samples was undertaken to explain radionuclide production in a cosmic-ray environment. The BNL Linac 200-MeV-proton beam was used to irradiate synthetic Stony Meteorites to simulate cosmic-ray exposures corresponding to 6.4 and 16.4 million years. Each irradiated sample was analyzed with the help of a high-resolution gamma-ray spectrometer for long-lived radioisotopes. The intranuclear cascade code HETC was employed to simulate the 200-MeV proton bombardment on the meteorite samples to predict the radionuclides 7 Be, 22 Na, 46 Mn, and 56 Co produced in the experimental investigation

  4. Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

    Saito, Yuta; Shindo, Satoshi; Sutou, Yuji; Koike, Junichi

    2014-01-01

    Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu 2 Te 3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu 2 Te 3 film. From the compositional depth profile measurement, the GeCu 2 Te 3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change. (paper)

  5. Nonstructural NSs protein of rift valley fever virus interacts with pericentromeric DNA sequences of the host cell, inducing chromosome cohesion and segregation defects.

    Mansuroglu, Z; Josse, T; Gilleron, J; Billecocq, A; Leger, P; Bouloy, M; Bonnefoy, E

    2010-01-01

    Rift Valley fever virus (RVFV) is an emerging, highly pathogenic virus; RVFV infection can lead to encephalitis, retinitis, or fatal hepatitis associated with hemorrhagic fever in humans, as well as death, abortions, and fetal deformities in animals. RVFV nonstructural NSs protein, a major factor of the virulence, forms filamentous structures in the nuclei of infected cells. In order to further understand RVFV pathology, we investigated, by chromatin immunoprecipitation, immunofluorescence, fluorescence in situ hybridization, and confocal microscopy, the capacity of NSs to interact with the host genome. Our results demonstrate that even though cellular DNA is predominantly excluded from NSs filaments, NSs interacts with some specific DNA regions of the host genome such as clusters of pericentromeric gamma-satellite sequence. Targeting of these sequences by NSs was correlated with the induction of chromosome cohesion and segregation defects in RVFV-infected murine, as well as sheep cells. Using recombinant nonpathogenic virus rZHDeltaNSs210-230, expressing a NSs protein deleted of its region of interaction with cellular factor SAP30, we showed that the NSs-SAP30 interaction was essential for NSs to target pericentromeric sequences, as well as for induction of chromosome segregation defects. The effect of RVFV upon the inheritance of genetic information is discussed with respect to the pathology associated with fetal deformities and abortions, highlighting the main role played by cellular cofactor SAP30 on the establishment of NSs interactions with host DNA sequences and RVFV pathogenesis.

  6. Beam-loss induced pressure rise of Large Hadron Collider collimator materials irradiated with 158 GeV/u $In^{49+}$ ions at the CERN Super Proton Synchrotron

    Mahner, Edgar; Hansen, Jan; Page, Eric; Vincke, H

    2004-01-01

    During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 10/sup 4/ to 10/sup 7/ molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measurement of heavy-ion induced molecular desorption in the GeV/u energy range is important for Large Hadron Collider (LHC) ion operation. In 2003, a desorption experiment was installed at the super proton synchrotron to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV) graphite, and 316 LN (low carbon with nitrogen) stainless steel were irradiated under grazing angle with 158 GeV/u indium ions. After a description of the new experimental ...

  7. Beam-Loss Induced Pressure Rise of LHC Collimator Materials Irradiated with 158 GeV/u $In^{49+}$ Ions at the CERN SPS

    Mahner, Edgar; Hansen, Jan; Page, Eric; Vincke, Helmut H

    2004-01-01

    During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 1044 to 107 molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measure-ment of heavy-ion induced molecular desorption in the GeV/u energy range is important for LHC ion operation. In 2003, a desorption experiment was installed at the SPS to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV) graphite, and 316 LN stainless steel, were irradiated under grazing angle with 158 GeV/u indium ions. After a description of the new experimental set-up, the results of the pressure rise measurements are presented, and the deri...

  8. Photo-induced effects of the virgin Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film

    Knotek, P.; Tichy, L.; Kutalek, P.

    2015-01-01

    Amorphous Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film was prepared through thermal evaporation. A blue shift of the optical band gap by approximately 100 meV was observed as a result of self-bleaching process of protected film aged for two years. The magnitude of the light induced blue shift of the optical band of the virgin film is primarily dependent on the light penetration depth and on the light intensity. The kinetics of photo-bleaching follows the stretch exponential function with a formal rate of bleaching depending on the light intensity while the saturated state is independent from the light intensity. The far infrared spectra indicate that ageing, illumination by over-band gap-photons and annealing of the virgin film are mainly accompanied by the film network ordering. Illumination by UV light photons led to a blue shift accompanied by the significant oxidation as evidenced by the results of the far infrared spectra and the energy dispersive analysis. - Highlights: • “Giant” photo-induced effects in virgin Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film • The role of the film thickness, the wavelengths and intensity of excitation photons • The changes of the photo-sensitivity due to the self-ageing process • The high-intensity illumination (> 10 W/cm"2) led to the different processes

  9. Photo-induced effects of the virgin Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film

    Knotek, P., E-mail: petr.knotek@upce.cz [University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry, Studentska 573, 532 10 Pardubice (Czech Republic); Tichy, L. [Institute of Macromolecular Chemistry, AS CR, Heyrovskeho sq. 2, 162 06 Prague (Czech Republic); Kutalek, P. [University of Pardubice, Faculty of Chemical Technology, Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of Academy of Sciences of the Czech Republic, v.v.i., and University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic)

    2015-11-02

    Amorphous Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film was prepared through thermal evaporation. A blue shift of the optical band gap by approximately 100 meV was observed as a result of self-bleaching process of protected film aged for two years. The magnitude of the light induced blue shift of the optical band of the virgin film is primarily dependent on the light penetration depth and on the light intensity. The kinetics of photo-bleaching follows the stretch exponential function with a formal rate of bleaching depending on the light intensity while the saturated state is independent from the light intensity. The far infrared spectra indicate that ageing, illumination by over-band gap-photons and annealing of the virgin film are mainly accompanied by the film network ordering. Illumination by UV light photons led to a blue shift accompanied by the significant oxidation as evidenced by the results of the far infrared spectra and the energy dispersive analysis. - Highlights: • “Giant” photo-induced effects in virgin Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film • The role of the film thickness, the wavelengths and intensity of excitation photons • The changes of the photo-sensitivity due to the self-ageing process • The high-intensity illumination (> 10 W/cm{sup 2}) led to the different processes.

  10. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

    Ito, Koichi; Ohta, Akio; Kurosawa, Masashi; Araidai, Masaaki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-06-01

    The growth of a two-dimensional crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.

  11. Patterns of Residential Segregation.

    Rémi Louf

    Full Text Available The spatial distribution of income shapes the structure and organisation of cities and its understanding has broad societal implications. Despite an abundant literature, many issues remain unclear. In particular, all definitions of segregation are implicitely tied to a single indicator, usually rely on an ambiguous definition of income classes, without any consensus on how to define neighbourhoods and to deal with the polycentric organization of large cities. In this paper, we address all these questions within a unique conceptual framework. We avoid the challenge of providing a direct definition of segregation and instead start from a definition of what segregation is not. This naturally leads to the measure of representation that is able to identify locations where categories are over- or underrepresented. From there, we provide a new measure of exposure that discriminates between situations where categories co-locate or repel one another. We then use this feature to provide an unambiguous, parameter-free method to find meaningful breaks in the income distribution, thus defining classes. Applied to the 2014 American Community Survey, we find 3 emerging classes-low, middle and higher income-out of the original 16 income categories. The higher-income households are proportionally more present in larger cities, while lower-income households are not, invalidating the idea of an increased social polarisation. Finally, using the density-and not the distance to a center which is meaningless in polycentric cities-we find that the richer class is overrepresented in high density zones, especially for larger cities. This suggests that density is a relevant factor for understanding the income structure of cities and might explain some of the differences observed between US and European cities.

  12. Waste segregation procedures and benefits

    Fish, J.D.; Massey, C.D.; Ward, S.J.

    1990-01-01

    Segregation is a critical first step in handling hazardous and radioactive materials to minimize the generation of regulated wastes. In addition, segregation can significantly reduce the complexity and the total cost of managing waste. Procedures at Sandia National Laboratories, Albuquerque require that wastes be segregated, first, by waste type (acids, solvents, low level radioactive, mixed, classified, etc.). Higher level segregation requirements, currently under development, are aimed at enhancing the possibilities for recovery, recycle and reapplication; reducing waste volumes; reducing waste disposal costs, and facilitating packaging storage, shipping and disposal. 2 tabs

  13. Multielemental Determination of As, Bi, Ge, Sb, and Sn in Agricultural Samples Using Hydride Generation Coupled to Microwave-Induced Plasma Optical Emission Spectrometry.

    Machado, Raquel C; Amaral, Clarice D B; Nóbrega, Joaquim A; Araujo Nogueira, Ana Rita

    2017-06-14

    A microwave-induced plasma optical emission spectrometer with N 2 -based plasma was combined with a multimode sample introduction system (MSIS) for hydride generation (HG) and multielemental determination of As, Bi, Ge, Sb, and Sn in samples of forage, bovine liver, powdered milk, agricultural gypsum, rice, and mineral fertilizer, using a single condition of prereduction and reduction. The accuracy of the developed analytical method was evaluated using certified reference materials of water and mineral fertilizer, and recoveries ranged from 95 to 106%. Addition and recovery experiments were carried out, and the recoveries varied from 85 to 117% for all samples evaluated. The limits of detection for As, Bi, Ge, Sb, and Sn were 0.46, 0.09, 0.19, 0.46, and 5.2 μg/L, respectively, for liquid samples, and 0.18, 0.04, 0.08, 0.19, and 2.1 mg/kg, respectively, for solid samples. The method proposed offers a simple, fast, multielemental, and robust alternative for successful determination of all five analytes in agricultural samples with low operational cost without compromising analytical performance.

  14. Dislocation and void segregation in copper during neutron irradiation

    Singh, Bachu Narain; Leffers, Torben; Horsewell, Andy

    1986-01-01

    ); the irradiation experiments were carried out at 250 degree C. The irradiated specimens were examined by transmission electron microscopy. At both doses, the irradiation-induced structure was found to be highly segregated; the dislocation loops and segments were present in the form of irregular walls and the voids...... density, the void swelling rate was very high (approximately 2. 5% per dpa). The implications of the segregated distribution of sinks for void formation and growth are briefly discussed....

  15. Conditions for spatial segregation: some European perspectives.

    Musterd, S.; de Winter, M.

    1998-01-01

    Evaluates some theses on the theme of spatial segregation in Europe. Spatial segregation as an important issue on the political agendas of European nations; Two views of segregation in Europe; Strategies of European nations to deal with segregation; Segregation in European cities

  16. Temperature-induced valence transition in EuNi2(Si0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy

    Yamamoto, Kazuya; Kamakura, Nozomu; Taguchi, Munetaka; Chainani, Ashish; Takata, Yasutaka; Horiba, Koji; Shin, Shik; Ikenaga, Eiji; Mimura, Kojiro; Shiga, Masayuki; Wada, Hirofumi; Namatame, Hirofumi; Taniguchi, Masaki; Awaji, Mitsuhiro; Takeuchi, Akihisa; Nishino, Yoshinori; Miwa, Daigo; Tamasaku, Kenji; Ishikawa, Tetsuya; Kobayashi, Keisuke

    2005-01-01

    The temperature-induced mixed valence transition in EuNi 2 (Si 0.20 Ge 0.80 ) 2 has been investigated by hard X-ray (5940 eV) photoemission spectroscopy (HX-PES) for fractured surfaces, with a probing depth larger than 5 nm. The Eu 3d core-level states are studied below and above the critical valence transition temperature, T v = 80 K. The HX-PES spectra at 40 and 120 K show the mixed valence transition, with clear changes in the divalent and trivalent Eu 3d chemically shifted features. The Eu 3d HX-PES spectra indicate a mean valence of 2.70 ± 0.03 at 40 K which changes to 2.40 ± 0.03 at 120 K, in good accordance with the results of bulk Eu III -edge X-ray absorption spectroscopy measurements

  17. Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

    Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

    2015-09-14

    By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

  18. Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material

    Houtsma, V.E.; Holleman, J.; Salm, Cora; de Haan, I.R.; Schmitz, Jurriaan; Widdershoven, F.P.; Widdershoven, F.P.; Woerlee, P.H.

    1999-01-01

    In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier

  19. Chromosome segregation in plant meiosis

    Linda eZamariola

    2014-06-01

    Full Text Available Faithful chromosome segregation in meiosis is essential for ploidy stability over sexual life cycles. In plants, defective chromosome segregation caused by gene mutations or other factors leads to the formation of unbalanced or unreduced gametes creating aneuploid or polyploid progeny, respectively. Accurate segregation requires the coordinated execution of conserved processes occurring throughout the two meiotic cell divisions. Synapsis and recombination ensure the establishment of chiasmata that hold homologous chromosomes together allowing their correct segregation in the first meiotic division, which is also tightly regulated by cell-cycle dependent release of cohesin and monopolar attachment of sister kinetochores to microtubules. In meiosis II, bi-orientation of sister kinetochores and proper spindle orientation correctly segregate chromosomes in four haploid cells. Checkpoint mechanisms acting at kinetochores control the accuracy of kinetochore-microtubule attachment, thus ensuring the completion of segregation. Here we review the current knowledge on the processes taking place during chromosome segregation in plant meiosis, focusing on the characterization of the molecular factors involved.

  20. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  1. Applied thermodynamics: Grain boundary segregation

    Lejček, Pavel; Zheng, L.; Hofmann, S.; Šob, Mojmír

    2014-01-01

    Roč. 16, č. 3 (2014), s. 1462-1484 ISSN 1099-4300 R&D Projects: GA ČR(CZ) GAP108/12/0311; GA ČR GAP108/12/0144; GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68378271 ; RVO:68081723 Keywords : interfacial segregation * Gibbs energy of segregation * enthalpy * entropy * volume * grain boundaries * iron Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.502, year: 2014

  2. PICH promotes mitotic chromosome segregation

    Nielsen, Christian Thomas Friberg; Hickson, Ian D

    2016-01-01

    PICH is an SNF2-family DNA translocase that appears to play a role specifically in mitosis. Characterization of PICH in human cells led to the initial discovery of "ultra-fine DNA bridges" (UFBs) that connect the 2 segregating DNA masses in the anaphase of mitosis. These bridge structures, which...... further the role of PICH in the timely segregation of the rDNA locus....

  3. Habitat segregation in fish assemblages

    Ibbotson, A.T.

    1990-01-01

    The segregation of habitats of fish assemblages found in the chalk streams and rivers within the Wessex, South West and Southern Water Authority boundaries in southern England have been examined. Habitat segregation is the most frequent type of resource partitioning in natural communities. The habitat of individual fish species will be defined in order to determine the following: (1) the requirements of each species in terms of depth, current velocity, substrate, cover etc.; (2) identify the ...

  4. Intergranular brittle fracture of a low alloy steel induced by grain boundary segregation of impurities: influence of the microstructure; Rupture intergranulaire fragile d'un acier faiblement allie induite par la segregation d'impuretes aux joints de grains: influence de la microstructure

    Raoul, St

    1999-07-01

    The study contributes to improve the comprehension of intergranular embrittlement induced by the phosphorus segregation along prior austenitic grain boundaries of low alloy steels used in pressurized power reactor vessel. A part of this study was performed using a A533 steel which contains chemical fluctuations (ghost lines) with two intensities. Axi-symmetrically notched specimens were tested and intergranular brittle de-cohesions were observed in the ghost lines. The fracture initiation sites observed on fracture surfaces were identified as MnS inclusions. A bimodal statistic obtained in a probabilistic model of the fracture is explained by the double population of ghost lines' intensities. A metallurgical study was performed on the same class of steel by studying the influence of the microstructure on the susceptibility to temper embrittlement. Brittle fracture properties of such microstructures obtained by dilatometric experiments were tested on sub-sized specimens to measure the V-notched fracture toughness. Fraction areas of brittle fracture modes were determined on surface fractures. A transition of the fracture mode with the microstructure is observed. It is shown that tempered microstructures of martensite and lower bainite are more susceptible to intergranular embrittlement than tempered upper bainitic microstructure. The intergranular fracture is the most brittle mode. The analysis of crystalline mis-orientations shows a grain boundary structure appreciably more coherent for tempered microstructures of martensite and lower bainite. The higher density of randomgrain boundaries is susceptible to drag the phosphorus in the upper bainitic matrix and to make the quantity of free phosphorus decreasing. Microstructure observations show a difference in the size and the spatial distribution of carbides, essentially cementite, between tempered martensite and upper bainite. It can explain the bigger susceptibility of this last microstructure to cleavage mode

  5. Income Segregation between Schools and School Districts

    Owens, Ann; Reardon, Sean F.; Jencks, Christopher

    2016-01-01

    Although trends in the racial segregation of schools are well documented, less is known about trends in income segregation. We use multiple data sources to document trends in income segregation between schools and school districts. Between-district income segregation of families with children enrolled in public school increased by over 15% from…

  6. Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

    Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

    2018-01-01

    The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

  7. Atomic-scale investigations of grain boundary segregation in astrology with a three dimensional atom-probe

    Blavette, D. [Rouen Univ., 76 - Mont-Saint-Aignan (France). Lab. de Microscopie Electronique]|[Institut Universitaire de France (France); Letellier, L. [Rouen Univ., 76 - Mont-Saint-Aignan (France). Lab. de Microscopie Electronique; Duval, P. [Rouen Univ., 76 - Mont-Saint-Aignan (France). Lab. de Microscopie Electronique; Guttmann, M. [Rouen Univ., 76 - Mont-Saint-Aignan (France). Lab. de Microscopie Electronique]|[Institut de Recherches de la Siderurgie Francaise (IRSID), 57 - Maizieres-les-Metz (France)

    1996-08-01

    Both conventional and 3D atom-probes were applied to the investigation of grain-boundary (GB) segregation phenomena in two-phase nickel base superalloys Astroloy. 3D images as provided by the tomographic atom-probe reveal the presence of a strong segregation of both boron and molybdenum at grain-boundaries. Slight carbon enrichment is also detected. Considerable chromium segregation is exhibited at {gamma}`-{gamma}` grain-boundaries. All these segregants are distributed in a continuous manner along the boundary over a width close to 0.5 nm. Experiments show that segregation occurs during cooling and more probably between 1000 C and 800 C. Boron and molybdenum GB enrichments are interpreted as due to an equilibrium type-segregation while chromium segregation is thought to be induced by {gamma}` precipitation at GB`s and stabilised by the presence of boron. No segregation of zirconium is detected. (orig.)

  8. HETC-3STEP calculations of proton induced nuclide production cross sections at incident energies between 20 MeV and 5 GeV

    Takada, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Yoshizawa, Nobuaki; Ishibashi, Kenji

    1996-08-01

    For the OECD/NEA code intercomparison, nuclide production cross sections of {sup 16}O, {sup 27}Al, {sup nat}Fe, {sup 59}Co, {sup nat}Zr and {sup 197}Au for the proton incidence with energies of 20 MeV to 5 GeV are calculated with the HETC-3STEP code based on the intranuclear cascade evaporation model including the preequilibrium and high energy fission processes. In the code, the level density parameter derived by Ignatyuk, the atomic mass table of Audi and Wapstra and the mass formula derived by Tachibana et al. are newly employed in the evaporation calculation part. The calculated results are compared with the experimental ones. It is confirmed that HETC-3STEP reproduces the production of the nuclides having the mass number close to that of the target nucleus with an accuracy of a factor of two to three at incident proton energies above 100 MeV for {sup nat}Zr and {sup 197}Au. However, the HETC-3STEP code has poor accuracy on the nuclide production at low incident energies and the light nuclide production through the fragmentation process induced by protons with energies above hundreds of MeV. Therefore, further improvement is required. (author)

  9. HETC-3STEP calculations of proton induced nuclide production cross sections at incident energies between 20 MeV and 5 GeV

    Takada, Hiroshi; Yoshizawa, Nobuaki; Ishibashi, Kenji.

    1996-08-01

    For the OECD/NEA code intercomparison, nuclide production cross sections of 16 O, 27 Al, nat Fe, 59 Co, nat Zr and 197 Au for the proton incidence with energies of 20 MeV to 5 GeV are calculated with the HETC-3STEP code based on the intranuclear cascade evaporation model including the preequilibrium and high energy fission processes. In the code, the level density parameter derived by Ignatyuk, the atomic mass table of Audi and Wapstra and the mass formula derived by Tachibana et al. are newly employed in the evaporation calculation part. The calculated results are compared with the experimental ones. It is confirmed that HETC-3STEP reproduces the production of the nuclides having the mass number close to that of the target nucleus with an accuracy of a factor of two to three at incident proton energies above 100 MeV for nat Zr and 197 Au. However, the HETC-3STEP code has poor accuracy on the nuclide production at low incident energies and the light nuclide production through the fragmentation process induced by protons with energies above hundreds of MeV. Therefore, further improvement is required. (author)

  10. Systematic experimental survey on projectile fragmentation and fission induced in collisions of {sup 238}U at 1 A GeV with lead

    Enquist, T.; Benlliure, J.; Farget, F.; Schmidt, K.H.; Armbruster, P. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Bernas, M.; Tassan-Got, L. [Paris-11 Univ., 91 - Orsay (France). Inst. de Physique Nucleaire; Boudard, A.; Legrain, R.; Volant, C. [CEA Centre d`Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de Physique des Particules, de Physique Nucleaire et de l`Instrumentation Associee (DAPNIA); Boeckstiegel, C.; Jong, M. de [Technische Univ. Darmstadt (Germany); Dufour, J.P. [CEA Centre d`Etudes Nucleaires de Bordeaux-Gradignan, 33 - Gradignan (France)

    1999-03-01

    Projectile fragmentation and fission, induced in collisions of {sup 238}U at 1 A GeV with lead, have systematically been studied. A complete survey on the isotopic production cross sections of all elements between vanadium (Z = 23) and rhenium (Z = 75) down to a cross section of 0.1 mb is given. About 600 isotopes produced in fragmentation and about 600 isotopes produced in fission were identified in the GSI fragment separator FRS from magnetic rigidities, time-of-flight values, and the energy loss in an ionisation chamber. In addition, the velocity distributions of all these reaction products have been mapped, and the products are unambiguously attributed to the different reaction mechanisms due to their kinematical properties. The results are compared with empirical systematics and previous data. The velocity of the fragments obtained in the fission process by the Coulomb repulsion allows to reconstruct the TKE-value of the break-up and to identify the atomic number of the fissioning nucleus in hot fission. The mean velocities of light projectile fragments were found to be higher than the beam velocity. (orig.) 41 refs.

  11. Systematic experimental survey on projectile fragmentation and fission induced in collisions of 238U at 1 A GeV with lead

    Enqvist, T.; Benlliure, J.; Farget, F.; Schmidt, K.H.; Armbruster, P.; Bernas, M.; Tassan-Got, L.; Boeckstiegel, C.; Jong, M. de; Dufour, J.P.

    1999-03-01

    Projectile fragmentation and fission, induced in collisions of 238 U at 1 A GeV with lead, have systematically been studied. A complete survey on the isotopic production cross sections of all elements between vanadium (Z = 23) and rhenium (Z = 75) down to a cross section of 0.1 mb is given. About 600 isotopes produced in fragmentation and about 600 isotopes produced in fission were identified in the GSI fragment separator FRS from magnetic rigidities, time-of-flight values, and the energy loss in an ionisation chamber. In addition, the velocity distributions of all these reaction products have been mapped, and the products are unambiguously attributed to the different reaction mechanisms due to their kinematical properties. The results are compared with empirical systematics and previous data. The velocity of the fragments obtained in the fission process by the Coulomb repulsion allows to reconstruct the TKE-value of the break-up and to identify the atomic number of the fissioning nucleus in hot fission. The mean velocities of light projectile fragments were found to be higher than the beam velocity. (orig.)

  12. Ion induced modification of polymers at energies between 100 keV and 1 GeV applied for optical waveguides and improved metal adhesion

    Rueck, D.M.

    2000-01-01

    Polymers are a class of materials widely used for a broad field of applications. Ion irradiation ranging from several eV to GeV is a quite efficient tool to modify the properties of polymers like wettability, optical properties, adhesion between metal and polymer surfaces. In this paper ion induced chemical changes of polymers will be discussed in relation to the modified macroscopic properties. In the field of optical telecommunication, polymers are discussed as a new class of materials for the fabrication of passive optical devices. Ion irradiation is a promising method to generate structures with a modified index of refraction, which is necessary for the guidance of light with different wavelengths in optical devices. Modified optical properties of different polymers under ion irradiation will be discussed. Analytical investigations like infrared measurements and measurement of the outgassing reaction products during irradiation will be discussed to interpret the chemical changes of the polymers. Metallization of polymers is of interest in several fields of application like for multilayer systems in microtechnology or casings for radiation shielding for example. Ion beam mixing at low energies is a promising method to improve the metal/polymer adhesion. Also ion irradiation at high energies applied to a metal/polymer multilayer can improve the adhesion of a metal layer to a polymer surface, if not sufficient. Different metal/polymer systems will be presented as well as specific applications

  13. Nitric oxide induces segregation of decay accelerating factor (DAF or CD55) from the membrane lipid-rafts and its internalization in human endometrial cells.

    Banadakoppa, Manu; Goluszko, Pawel; Liebenthal, Daniel; Yallampalli, Chandra

    2012-10-01

    Recent studies suggest that DAF (decay accelerating factor), a complement regulatory protein, present in lipid rafts, is utilized by Dr fimbriated Escherichia coli for their binding and internalization. Previous studies in our laboratory have shown that NO (nitric oxide) can reduce the invasion of Dr(+) E. coli and the severity of uterine infection in pregnant rats. Also, the expression level of DAF both at the mRNA and protein levels has been shown to be reduced by NO. Therefore NO mediated down-regulation of DAF appears to be an important factor in reducing the susceptibility to E. coli infection. However, it is unclear if NO can actually modulate the membrane association of DAF and therefore initial bacterial binding to cells. We found that NO induces the delocalization of DAF from the G(M1)-rich lipid rafts. Using biochemical and cell biological approaches in a uterine epithelial cell model (Ishikawa cells), DAF accumulates in caveolae upon exposure to NO. Interaction of DAF with the caveolar protein, caveolin1, leads to their internalization by endosomes. NO-induced delocalization of DAF from the lipid raft and its accumulation in caveolae are mediated through a cGMP (cyclic guanosine monophosphate) pathway. The acute localized synthesis of NO and its influence on DAF localization may represent an important unrecognized phenomenon of host defence against Dr(+) E. coli bacteria, as well as many disease conditions that involve complement system.

  14. Analysis for fragmentation products of proton-induced reactions on Pb with energy up to GeV

    Fan Sheng; Li Zhuxia; Zhao Zhixiang; Ding Dazhao

    2002-01-01

    The mass and charge distribution of residual products produced in the spallation reaction needs to be studied because it can provide useful information for the disposal of nuclear and the radiation damage in the spallation target. The mass and charge distribution of the spallation products is studied by using quantum molecular dynamic (QMD) models. The simulation results are well agreed with the experimental data of the spallation fragment and empirical formula. However, QMD model does not include the fission process; the calculations can not reproduce the fission fragment. The fission model is introduced into QMD model to investigate the fragment products from proton-induced reactions on Pb. The results are in good agreement with the experimental data

  15. Experimental study of spallation: neutron angular distributions induced by protons (0.8.,1.2 et 1.6 GeV) and deuterons (0.8 et 1.6 GeV) beams

    Borne, F.

    1998-01-01

    Angular distributions of spallation neutrons, produced by 0,8 to 1,6 GeV protons and 0,8 to 1,6 GeV deuterons, with two experimental and complementary techniques: the flight time measure and the use of a liquid hydrogen converter associated with a magnetic spectrometer of higher energy (2000 MeV). Experimental results obtained at Saturne (Cea) are analysed and interpreted. They allowed the determination of the neutrons production behaviour on thin targets (Al, Fe, Zr, W, Pb and Th) in function of the angle emission and the atomic number of the target and to compare the variation of neutrons production, coming from protons and incident deuterons of same total energy on a Pb target. Experimental results are compared with simulation results obtained with the TIERCE code, including Bertini and Cugnon intra-nuclear cascades. (A.L.B.)

  16. Components of segregation distortion in Drosophila melanogaster

    Ganetzky, B.

    1977-01-01

    The segregation distorter (SD) complex is a naturally occurring meiotic drive system with the property that males heterozygous for an SD-bearing chromosome 2 and an SD+-bearing homolog transmit the SD-bearing chromosome almost exclusively. This distorted segregation is the consequence of an induced dysfunction of those sperm that receive the SD+ homolog. From previous studies, two loci have been implicated in this phenomenon: the Sd locus which is required to produce distortion, and the Responder (Rsp) locus that is the site at which Sd acts. There are two allelic alternatives of Rsp-sensitive (Rsp/sup sens/) and insensitive (Rsp/sup ins/); a chromosome carrying Rsp/sup ins/ is not distorted by SD. In the present study, the function and location of each of these elements was examined by a genetic and cytological characterization of x-ray-induced mutations at each locus. The results indicate the following: the Rsp locus is located in the proximal heterochromatin of 2R; a deletion for the Rsp locus renders a chromosome insensitive to distortion; the Sd locus is located to the left of pr (2-54.5), in the region from 37D2-D7 to 38A6-B2 of the salivary chromosome map; an SD chromosome deleted for Sd loses its ability to distort; there is another important component of the SD system, E(SD), in or near the proximal heterochromatin of 2L, that behaves as a strong enhancer of distortion. The results of these studies allow a reinterpretation of results from earlier analyses of the SD system and serve to limit the possible mechanisms to account for segregation distortion

  17. Image segregation in strabismic amblyopia.

    Levi, Dennis M

    2007-06-01

    Humans with naturally occurring amblyopia show deficits thought to involve mechanisms downstream of V1. These include excessive crowding, abnormal global image processing, spatial sampling and symmetry detection and undercounting. Several recent studies suggest that humans with naturally occurring amblyopia show deficits in global image segregation. The current experiments were designed to study figure-ground segregation in amblyopic observers with documented deficits in crowding, symmetry detection, spatial sampling and counting, using similar stimuli. Observers had to discriminate the orientation of a figure (an "E"-like pattern made up of 17 horizontal Gabor patches), embedded in a 7x7 array of Gabor patches. When the 32 "background" patches are vertical, the "E" pops-out, due to segregation by orientation and performance is perfect; however, if the background patches are all, or mostly horizontal, the "E" is camouflaged, and performance is random. Using a method of constant stimuli, we varied the number of "background" patches that were vertical and measured the probability of correct discrimination of the global orientation of the E (up/down/left/right). Surprisingly, amblyopes who showed strong crowding and deficits in symmetry detection and counting, perform normally or very nearly so in this segregation task. I therefore conclude that these deficits are not a consequence of abnormal segregation of figure from background.

  18. Uses of AES and RGA to study neutron-irradiation-enhanced segregation to internal surfaces

    Gessel, G.R.; White, C.L.

    1980-01-01

    The high flux of point defects to sinks during neutron irradiation can result in segregation of impurity or alloy additions to metals. Such segregants can be preexisting or produced by neutron-induced transmutations. This segregation is known to strongly influence swelling and mechanical properties. Over a period of years, facilities have been developed at ORNL incorporating AES and RGA to examine irradiated materials. Capabilities of this system include in situ tensile fracture at elevated temperatures under ultrahigh vacuum 10 -10 torr and helium release monitoring. AES and normal incidence inert ion sputtering are exploited to examine segregation at the fracture surface and chemical gradients near the surface

  19. Segregation in a Galton Board

    Benito, J G; Vidales, A M; Ippolito, I

    2009-01-01

    This work deals with a numerical study of the problem of separation of particles with different elastic properties. The separation procedure uses a Galton Board which consist in a bidimensional system of obstacles arranged in a triangular lattice. Disks of equal diameters but different elastic properties are launched from the top of the device. The Galton Board is commonly used for mixing particles, but here, we intend to find special conditions under which one can use it as a segregating device. We introduce a mixture of particles and generate, through simulations, different conditions to favor the segregation process based on the different elastic coefficients of the particles. We inspect which is the best configuration of size, density of obstacles and wall separation to favor the separations of particles. Our results prove that the Galton Board can be used as a segregation device under certain conditions.

  20. Grain Boundary Segregation in Metals

    Lejcek, Pavel

    2010-01-01

    Grain boundaries are important structural components of polycrystalline materials used in the vast majority of technical applications. Because grain boundaries form a continuous network throughout such materials, their properties may limit their practical use. One of the serious phenomena which evoke these limitations is the grain boundary segregation of impurities. It results in the loss of grain boundary cohesion and consequently, in brittle fracture of the materials. The current book deals with fundamentals of grain boundary segregation in metallic materials and its relationship to the grain boundary structure, classification and other materials properties.

  1. Density-Driven segregation in Binary and Ternary Granular Systems

    Windows-Yule, Kit; Parker, David

    2015-01-01

    We present a first experimental study of density-induced segregation within a three-dimensional, vibrofluidised, ternary granular system. Using Positron Emission Particle Tracking (PEPT), we study the steady-state particle distributions achieved by binary and ternary granular beds under a variety of

  2. Microstructural characterization and formation mechanism of abnormal segregation band of hot rolled ferrite/pearlite steel

    Feng, Rui [School of Materials Science and Engineering, Shandong University, Jinan 250061 (China); Engineering Research Center of Large Size Alloy Structural Steel Bars of Shandong Province, Jinan 250061 (China); School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049 (China); Li, Shengli, E-mail: lishengli@sdu.edu.cn [School of Materials Science and Engineering, Shandong University, Jinan 250061 (China); Engineering Research Center of Large Size Alloy Structural Steel Bars of Shandong Province, Jinan 250061 (China); Zhu, Xinde [School of Materials Science and Engineering, Shandong University, Jinan 250061 (China); Ao, Qing [School of Materials Science and Engineering, Shandong University, Jinan 250061 (China); Engineering Research Center of Large Size Alloy Structural Steel Bars of Shandong Province, Jinan 250061 (China)

    2015-10-15

    In order to further reveal the microstructural characterization and formation mechanism of abnormal segregation band of hot rolled ferrite/pearlite steel, the microstructure of this type steel was intensively studied with Scanning Auger Microprobe (SAM), etc. The results show that severe C–Mn segregation exists in the abnormal segregation band region at the center of hot rolled ferrite/pearlite steel, which results from the Mn segregation during solidification process of the continuous casting slab. The C–Mn segregation causes relative displacement of pearlite transformation curve and bainite transformation curve of C curve in the corresponding region, leading to bay-like shaped C curve. The bay-like shaped C curve creates conditions for the transformation from supercooling austenite to bainite at relatively lower cooling rate in this region. The Fe–Mn–C Atomic Segregation Zone (FASZ) caused by C–Mn segregation can powerfully retard the atomic motion, and increase the lattice reconstruction resistance of austenite transformation. These two factors provide thermodynamic and kinetic conditions for the bainite transformation, and result in the emergence of granular bainitic abnormal segregation band at the center of steel plate, which leads to lower plasticity and toughness of this region, and induces the layered fracture. - Highlights: • Scanning Auger Microprobe (SAM) is applied in the fracture analysis. • The abnormal segregation band region appears obvious C–Mn segregation. • The C–Mn segregation leads to bay-like shaped C curve. • The C–Mn segregation leads to Fe–Mn–C Atomic Segregation Zone.

  3. Gender Segregation: Separate but Effective?

    Holthouse, David

    2010-01-01

    In 2002, only 11 public schools in the United States had gender-segregated classrooms. As of December 2009, there were more than 550. The movement is based on the hypothesis that hard-wired differences in the ways that male and female brains develop and function in childhood through adolescence require classrooms in which boys and girls are not…

  4. Sexual orientation, prejudice and segregation

    Plug, E.; Webbink, D.; Martin, N.

    2014-01-01

    This article examines whether gay and lesbian workers sort into tolerant occupations. With information on sexual orientation, prejudice, and occupational choice taken from Australian Twin Registers, we find that gays and lesbians shy away from prejudiced occupations. We show that our segregation

  5. Study on segregation of aluminium-uranium alloys

    Lima, Rui Marques de

    1979-01-01

    observed that the uranium concentration gradient increased with the deviation from the eutectic composition. The cooling rate reduction promoted horizontal segregation of the uranium, decreasing its vertical segregation. It was shown that the stability regions of certain structure forms found in the ingot could be obtained as a function of the growth rate and solute concentration. The uranium segregation for the alloys obtained with higher cooling rates, was anticipated for al-1 the compositions studied using the inverse segregation theory. The positive segregation in the ingot higher regions appeared when, in the solidification initial stages, it occurred nucleation and growth of crystals in a quantity larger than that corresponding to equilibrium. These particles moved later to the central axis of the ingot higher regions during the solidification in the ingot molds. The origin of the negative segregation close to the cooled ingot faces is due to two mechanisms: 1) movement of solute depleted liquid in the channels of dendritic or equi axial phases in the direction of the cooled faces; 2) movement of solute enriched phases to the last regions to be solidified. The uranium normal segregation is analysed using the concept of solute rejection in front of a growth interface with dendritic micro morphology. It is assumed that the composition of the primary phase dendrites do not stay effectively in the K Q C o value. Therefore, this fact contributes also for the segregation. It is discussed the possibility of occurring liquid currents induced by density differences, dendritic interactions, decanting of the solute-rich inter dendritic liquid, and porosity, that may have affected the segregation intensity. The segregation at the eutectic temperature and the deposition of solute enriched phases are also analysed. (author)

  6. 36 CFR 254.6 - Segregative effect.

    2010-07-01

    ... 36 Parks, Forests, and Public Property 2 2010-07-01 2010-07-01 false Segregative effect. 254.6... ADJUSTMENTS Land Exchanges § 254.6 Segregative effect. (a) If a proposal is made to exchange Federal lands... segregative effect terminates as follows: (1) Automatically, upon issuance of a patent or other document of...

  7. Thermodynamic effect of elastic stress on grain boundary segregation of phosphorus in a low alloy steel

    Zheng, Lei; Lejček, Pavel; Song, Shenhua; Schmitz, Guido; Meng, Ye

    2015-01-01

    Grain boundary (GB) segregation of P in 2.25Cr1Mo steel induced by elastic stress shows that the P equilibrium concentration, after reaching the non-equilibrium concentration maximum at critical time, returns to its initial thermal equilibrium level. This finding confirms the interesting phenomenon that the effect of elastic stress on GB segregation of P is significant in kinetics while slight in thermodynamics. Through extending the “pressure” in classical theory of chemical potential to the “elastic stress”, the thermodynamic effect of elastic stress on GB segregation is studied, and the relationship between elastic stress and segregation Gibbs energy is formulated. The formulas reveal that the difference in the segregation Gibbs energy between the elastically-stressed and non-stressed states depends on the excess molar volume of GB segregation and the magnitude of elastic stress. Model calculations in segregation Gibbs energy confirm that the effect of elastic stress on the thermodynamics of equilibrium GB segregation is slight, and the theoretical analyses considerably agree with the experimental results. The confirmation indicates that the nature of the thermodynamic effect is well captured. - Highlights: • GB segregation of P after stress aging returns to its initial thermal equilibrium level. • Relationship between elastic stress and segregation energy is formulated. • Thermodynamic effect relies on excess molar volume and magnitude of elastic stress. • Effect of elastic stress on Gibbs energy of GB segregation is estimated to be slight. • Complete theory of the effect of elastic stress on grain boundary segregation is setup

  8. System size and energy dependence of jet-induced hadron pair correlation shapes in Cu+Cu and Au+Au collisions at square root sNN=200 and 62.4 GeV.

    Adare, A; Adler, S S; Afanasiev, S; Aidala, C; Ajitanand, N N; Akiba, Y; Al-Bataineh, H; Alexander, J; Al-Jamel, A; Aoki, K; Aphecetche, L; Armendariz, R; Aronson, S H; Asai, J; Atomssa, E T; Averbeck, R; Awes, T C; Azmoun, B; Babintsev, V; Baksay, G; Baksay, L; Baldisseri, A; Barish, K N; Barnes, P D; Bassalleck, B; Bathe, S; Batsouli, S; Baublis, V; Bauer, F; Bazilevsky, A; Belikov, S; Bennett, R; Berdnikov, Y; Bickley, A A; Bjorndal, M T; Boissevain, J G; Borel, H; Boyle, K; Brooks, M L; Brown, D S; Bruner, N; Bucher, D; Buesching, H; Bumazhnov, V; Bunce, G; Burward-Hoy, J M; Butsyk, S; Camard, X; Campbell, S; Chai, J-S; Chand, P; Chang, B S; Chang, W C; Charvet, J-L; Chernichenko, S; Chiba, J; Chi, C Y; Chiu, M; Choi, I J; Choudhury, R K; Chujo, T; Chung, P; Churyn, A; Cianciolo, V; Cleven, C R; Cobigo, Y; Cole, B A; Comets, M P; Constantin, P; Csanád, M; Csörgo, T; Cussonneau, J P; Dahms, T; Das, K; David, G; Deák, F; Deaton, M B; Dehmelt, K; Delagrange, H; Denisov, A; d'Enterria, D; Deshpande, A; Desmond, E J; Devismes, A; Dietzsch, O; Dion, A; Donadelli, M; Drachenberg, J L; Drapier, O; Drees, A; Dubey, A K; Durum, A; Dutta, D; Dzhordzhadze, V; Efremenko, Y V; Egdemir, J; Ellinghaus, F; Emam, W S; Enokizono, A; En'yo, H; Espagnon, B; Esumi, S; Eyser, K O; Fields, D E; Finck, C; Finger, M; Finger, M; Fleuret, F; Fokin, S L; Forestier, B; Fox, B D; Fraenkel, Z; Frantz, J E; Franz, A; Frawley, A D; Fujiwara, K; Fukao, Y; Fung, S-Y; Fusayasu, T; Gadrat, S; Garishvili, I; Gastineau, F; Germain, M; Glenn, A; Gong, H; Gonin, M; Gosset, J; Goto, Y; Granier de Cassagnac, R; Grau, N; Greene, S V; Grosse Perdekamp, M; Gunji, T; Gustafsson, H-A; Hachiya, T; Hadj Henni, A; Haegemann, C; Haggerty, J S; Hagiwara, M N; Hamagaki, H; Han, R; Hansen, A G; Harada, H; Hartouni, E P; Haruna, K; Harvey, M; Haslum, E; Hasuko, K; Hayano, R; Heffner, M; Hemmick, T K; Hester, T; Heuser, J M; He, X; Hidas, P; Hiejima, H; Hill, J C; Hobbs, R; Hohlmann, M; Holmes, M; Holzmann, W; Homma, K; Hong, B; Hoover, A; Horaguchi, T; Hornback, D; Hur, M G; Ichihara, T; Ikonnikov, V V; Imai, K; Inaba, M; Inoue, Y; Inuzuka, M; Isenhower, D; Isenhower, L; Ishihara, M; Isobe, T; Issah, M; Isupov, A; Jacak, B V; Jia, J; Jin, J; Jinnouchi, O; Johnson, B M; Johnson, S C; Joo, K S; Jouan, D; Kajihara, F; Kametani, S; Kamihara, N; Kamin, J; Kaneta, M; Kang, J H; Kanou, H; Katou, K; Kawabata, T; Kawagishi, T; Kawall, D; Kazantsev, A V; Kelly, S; Khachaturov, B; Khanzadeev, A; Kikuchi, J; Kim, D H; Kim, D J; Kim, E; Kim, G-B; Kim, H J; Kim, Y-S; Kinney, E; Kiss, A; Kistenev, E; Kiyomichi, A; Klay, J; Klein-Boesing, C; Kobayashi, H; Kochenda, L; Kochetkov, V; Kohara, R; Komkov, B; Konno, M; Kotchetkov, D; Kozlov, A; Král, A; Kravitz, A; Kroon, P J; Kubart, J; Kuberg, C H; Kunde, G J; Kurihara, N; Kurita, K; Kweon, M J; Kwon, Y; Kyle, G S; Lacey, R; Lai, Y-S; Lajoie, J G; Lebedev, A; Le Bornec, Y; Leckey, S; Lee, D M; Lee, M K; Lee, T; Leitch, M J; Leite, M A L; Lenzi, B; Lim, H; Liska, T; Litvinenko, A; Liu, M X; Li, X; Li, X H; Love, B; Lynch, D; Maguire, C F; Makdisi, Y I; Malakhov, A; Malik, M D; Manko, V I; Mao, Y; Martinez, G; Masek, L; Masui, H; Matathias, F; Matsumoto, T; McCain, M C; McCumber, M; McGaughey, P L; Miake, Y; Mikes, P; Miki, K; Miller, T E; Milov, A; Mioduszewski, S; Mishra, G C; Mishra, M; Mitchell, J T; Mitrovski, M; Mohanty, A K; Morreale, A; Morrison, D P; Moss, J M; Moukhanova, T V; Mukhopadhyay, D; Muniruzzaman, M; Murata, J; Nagamiya, S; Nagata, Y; Nagle, J L; Naglis, M; Nakagawa, I; Nakamiya, Y; Nakamura, T; Nakano, K; Newby, J; Nguyen, M; Norman, B E; Nyanin, A S; Nystrand, J; O'Brien, E; Oda, S X; Ogilvie, C A; Ohnishi, H; Ojha, I D; Okada, H; Okada, K; Oka, M; Omiwade, O O; Oskarsson, A; Otterlund, I; Ouchida, M; Oyama, K; Ozawa, K; Pak, R; Pal, D; Palounek, A P T; Pantuev, V; Papavassiliou, V; Park, J; Park, W J; Pate, S F; Pei, H; Penev, V; Peng, J-C; Pereira, H; Peresedov, V; Peressounko, D Yu; Pierson, A; Pinkenburg, C; Pisani, R P; Purschke, M L; Purwar, A K; Qualls, J M; Qu, H; Rak, J; Rakotozafindrabe, A; Ravinovich, I; Read, K F; Rembeczki, S; Reuter, M; Reygers, K; Riabov, V; Riabov, Y; Roche, G; Romana, A; Rosati, M; Rosendahl, S S E; Rosnet, P; Rukoyatkin, P; Rykov, V L; Ryu, S S; Sahlmueller, B; Saito, N; Sakaguchi, T; Sakai, S; Sakata, H; Samsonov, V; Sanfratello, L; Santo, R; Sato, H D; Sato, S; Sawada, S; Schutz, Y; Seele, J; Seidl, R; Semenov, V; Seto, R; Sharma, D; Shea, T K; Shein, I; Shevel, A; Shibata, T-A; Shigaki, K; Shimomura, M; Shohjoh, T; Shoji, K; Sickles, A; Silva, C L; Silvermyr, D; Silvestre, C; Sim, K S; Singh, C P; Singh, V; Skutnik, S; Slunecka, M; Smith, W C; Soldatov, A; Soltz, R A; Sondheim, W E; Sorensen, S P; Sourikova, I V; Staley, F; Stankus, P W; Stenlund, E; Stepanov, M; Ster, A; Stoll, S P; Sugitate, T; Suire, C; Sullivan, J P; Sziklai, J; Tabaru, T; Takagi, S; Takagui, E M; Taketani, A; Tanaka, K H; Tanaka, Y; Tanida, K; Tannenbaum, M J; Taranenko, A; Tarján, P; Thomas, T L; Togawa, M; Toia, A; Tojo, J; Tomásek, L; Torii, H; Towell, R S; Tram, V-N; Tserruya, I; Tsuchimoto, Y; Tuli, S K; Tydesjö, H; Tyurin, N; Uam, T J; Vale, C; Valle, H; vanHecke, H W; Velkovska, J; Velkovsky, M; Vertesi, R; Veszprémi, V; Vinogradov, A A; Virius, M; Volkov, M A; Vrba, V; Vznuzdaev, E; Wagner, M; Walker, D; Wang, X R; Watanabe, Y; Wessels, J; White, S N; Willis, N; Winter, D; Wohn, F K; Woody, C L; Wysocki, M; Xie, W; Yamaguchi, Y L; Yanovich, A; Yasin, Z; Ying, J; Yokkaichi, S; Young, G R; Younus, I; Yushmanov, I E; Zajc, W A; Zaudtke, O; Zhang, C; Zhou, S; Zimányi, J; Zolin, L; Zong, X

    2007-06-08

    We present azimuthal angle correlations of intermediate transverse momentum (1-4 GeV/c) hadrons from dijets in Cu+Cu and Au+Au collisions at square root sNN=62.4 and 200 GeV. The away-side dijet induced azimuthal correlation is broadened, non-Gaussian, and peaked away from Delta phi=pi in central and semicentral collisions in all the systems. The broadening and peak location are found to depend upon the number of participants in the collision, but not on the collision energy or beam nuclei. These results are consistent with sound or shock wave models, but pose challenges to Cherenkov gluon radiation models.

  9. Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

    Nie Tianxiao; Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin; Chen Zhigang; Zou Jin

    2011-01-01

    A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

  10. Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

    Kim, H.; Glass, G.; Spila, T.; Taylor, N.; Park, S.Y.; Abelson, J.R.; Greene, J.E. [Department of Materials Science, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield, Urbana, Illinois 61801 (United States)

    1997-09-01

    B-doped Si(001) films, with concentrations C{sub B} up to 1.7{times}10{sup 22}cm{sup {minus}3}, were grown by gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and B{sub 2}H{sub 6} at T{sub s}=500{endash}800{degree}C. D{sub 2} temperature-programed desorption (TPD) spectra were then used to determine B coverages {theta}{sub B} as a function of C{sub B} and T{sub s}. In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deuterium until saturation coverage. Strong B surface segregation was observed with surface-to-bulk B concentration ratios ranging up to 1200. TPD spectra exhibited {beta}{sub 2} and {beta}{sub 1} peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced peaks {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}}. Increasing {theta}{sub B} increased the area under {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}} at the expense of {beta}{sub 2} and {beta}{sub 1} and decreased the total D coverage {theta}{sub D}. The TPD results were used to determine the B segregation enthalpy, {minus}0.53eV, and to explain and model the effects of high B coverages on Si(001) growth kinetics. Film deposition rates R increase by {ge}50{percent} with increasing C{sub B}{tilde {gt}}1{times}10{sup 19}cm{sup {minus}3} at T{sub s}{le}550{degree}C, due primarily to increased H desorption rates from B-backbonded Si adatoms, and decrease by corresponding amounts at T{sub s}{ge}600{degree}C due to decreased adsorption site densities. At T{sub s}{ge}700{degree}C, high B coverages also induce {l_brace}113{r_brace} facetting. {copyright} {ital 1997 American Institute of Physics.}

  11. Segregation in quasi-two-dimensional granular systems

    Rivas, Nicolas; Cordero, Patricio; Soto, Rodrigo; Risso, Dino

    2011-01-01

    Segregation for two granular species is studied numerically in a vertically vibrated quasi-two-dimensional (quasi-2D) box. The height of the box is smaller than two particle diameters so that particles are limited to a submonolayer. Two cases are considered: grains that differ in their density but have equal size, and grains that have equal density but different diameters, while keeping the quasi-2D condition. It is observed that in both cases, for vibration frequencies beyond a certain threshold-which depends on the density or diameter ratios-segregation takes place in the lateral directions. In the quasi-2D geometry, gravity does not play a direct role in the in-plane dynamics and gravity does not point to the segregation directions; hence, several known segregation mechanisms that rely on gravity are discarded. The segregation we observe is dominated by a lack of equipartition between the two species; the light particles exert a larger pressure than the heavier ones, inducing the latter to form clusters. This energy difference in the horizontal direction is due to the existence of a fixed point characterized by vertical motion and hence vanishing horizontal energy. Heavier and bigger grains are more rapidly attracted to the fixed point and the perturbations are less efficient in taking them off the fixed point when compared to the lighter grains. As a consequence, heavier and bigger grains have less horizontal agitation than lighter ones. Although limited by finite size effects, the simulations suggest that the two cases we consider differ in the transition character: one is continuous and the other is discontinuous. In the cases where grains differ in mass on varying the control parameter, partial segregation is first observed, presenting many clusters of heavier particles. Eventually, a global cluster is formed with impurities; namely lighter particles are present inside. The transition looks continuous when characterized by several segregation order

  12. Characterization of high-T/sub c/ Nb--Ge thin films by ion scattering, ion-induced x-rays, and ion resonance techniques

    Miller, J.W.; Appleton, E.R.; Murphree, Q.C.; Gavaler, J.R.

    1976-01-01

    Thin films of high-T/sub c/ (21-22 0 K) Nb--Ge were analyzed using three ion bombardment techniques. The depth dependence of stoichiometry in these superconducting thin films is determined by the deconvolution of a series of Rutherford backscattering spectra using 2.0-3.2 MeV 4 He ions at several incidence and scattering angles. Confirmation of these results is provided by studying the yields of Nb and Ge characteristic X-rays as a function of the angle of beam incidence. The depth dependence of oxygen, or oxides of Nb and Ge, is of particular interest, but more difficult to determine. A very sharp ion scattering resonance 16 O (α,α) at 3.045 MeV was utilized to enhance the backscattered yield and depth sensitivity of oxygen determination. The combined use of these three techniques now provides a nearly complete and nondestructive means for the characterization of such films

  13. Nonequilibrium Segregation in Petroleum Reservoirs

    Shapiro, Alexander; Stenby, Erling Halfdan

    1999-01-01

    We analyse adsorption of a multicomponent mixture at high pressure on the basis of the potential theory of adsorption. The adsorbate is considered as a segregated mixture in the external field produced by a solid adsorbent. we derive an analytical equation for the thickness of a multicomponent fi...... close to a dew point. This equation (asymptotic adsorption equation, AAE) is a first order approximation with regard to the distance from a phase envelope....

  14. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  15. Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

    Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

  16. Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD

    Yu Wang

    2015-11-01

    Full Text Available Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD. The structural evolution of the deposited films annealed at various temperatures (Ta is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.

  17. Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

    Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

    2016-12-01

    Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

  18. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  19. Progressive segregation of the Escherichia coli chromosome

    Nielsen, Henrik Jørck; Youngren, Brenda; Hansen, Flemming G.

    2006-01-01

    We have followed the fate of 14 different loci around the Escherichia coli chromosome in living cells at slow growth rate using a highly efficient labelling system and automated measurements. Loci are segregated as they are replicated, but with a marked delay. Most markers segregate in a smooth...... temporal progression from origin to terminus. Thus, the overall pattern is one of continuous segregation during replication and is not consistent with recently published models invoking extensive sister chromosome cohesion followed by simultaneous segregation of the bulk of the chromosome. The terminus......, and a region immediately clockwise from the origin, are exceptions to the overall pattern and are subjected to a more extensive delay prior to segregation. The origin region and nearby loci are replicated and segregated from the cell centre, later markers from the various positions where they lie...

  20. Ion Implantation in Ge: Structural and electrical investigation of the induced lattice damage & Study of the lattice location of implanted impurities

    Decoster, Stefan; Wahl, Ulrich

    The past two decades, germanium has drawn international attention as one of the most promising materials to replace silicon in semiconductor applications. Due to important advantages with respect to Si, such as the increased electron and hole mobility, Ge is well on its way to become an important material in future high-speed integrated circuits. Although the interest in this elemental group IV semiconductor is increasing rapidly nowadays, the number of publications about this material is still relatively scarce, especially when compared to Si. The most widely used technique to dope semiconductors is ion implantation, due to its good control of the dopant concentration and profile, and the isotopic purity of the implanted species. However, there is a major lack of knowledge of the fundamental properties of ion implantation in Ge, which has triggered the research presented in this thesis. One of the most important and generally unwanted properties of ion implantation is the creation of damage to the crystal la...

  1. Fission of Al, Ti, Co, Zr, Nb, Ag, In, Nd, Sm, and Ta nuclei induced by 0.8-1.8 GeV photons

    Lima, D.A. de; Martins, J.B.; Tavares, O.A.P.

    1989-01-01

    Samples of Al, Ti, Co, Zr, Nb, Ag, In, Nd, Sm, and Ta elements in contact with solid state nuclear track detectors were exposed to 0.8-1.8 GeV bremsstrahlung beams at the 2.5-GeV Electron Synchrotron of the Bonn University. The detectors were processed to produce visible fission tracks for track analysis with optical microscopes. Absolute mean cross section per photon and fissility were evaluated. Results are discussed and compared with other photofission data as well as with estimates from the current fission models. A broad minimum found for nuclear fissility of 10 -4 -10 -3 covering the range 15 approx Z 2 /A approx 25 seems to confirm the predictions from the models. For Al and Ti nuclei the probability of fission amounts to approx 10 -1 . (author) [pt

  2. Are segregated sports classes scientifically justified?

    Lawson, Sian; Hall, Edward

    2014-01-01

    School sports classes are a key part of physical and mental development, yet in many countries these classes are gender segregated. Before institutionalised segregation can be condoned it is important to tackle assumptions and check for an evidence-based rationale. This presentation aims to analyse the key arguments for segregation given in comment-form response to a recent media article discussing mixed school sports (Lawson, 2013).\\ud \\ud The primary argument given was division for strength...

  3. High Stability Induced by the TiN/Ti Interlayer in Three-Dimensional Si/Ge Nanorod Arrays as Anode in Micro Lithium Ion Battery.

    Yue, Chuang; Yu, Yingjian; Wu, Zhenguo; Sun, Shibo; He, Xu; Li, Juntao; Zhao, Libo; Wu, Suntao; Li, Jing; Kang, Junyong; Lin, Liwei

    2016-03-01

    Three-dimensional (3D) Si/Ge-based micro/nano batteries are promising lab-on-chip power supply sources because of the good process compatibility with integrated circuits and Micro/Nano-Electro-Mechanical System technologies. In this work, the effective interlayer of TiN/Ti thin films were introduced to coat around the 3D Si nanorod (NR) arrays before the amorphous Ge layer deposition as anode in micro/nano lithium ion batteries, thus the superior cycling stability was realized by reason for the restriction of Si activation in this unique 3D matchlike Si/TiN/Ti/Ge NR array electrode. Moreover, the volume expansion properties after the repeated lithium-ion insertion/extraction were experimentally investigated to evidence the superior stability of this unique multilayered Si composite electrode. The demonstration of this wafer-scale, cost-effective, and Si-compatible fabrication for anodes in Li-ion micro/nano batteries provides new routes to configurate more efficient 3D energy storage systems for micro/nano smart semiconductor devices.

  4. Study of Ge loss during Ge condensation process

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  5. Digital morphogenesis via Schelling segregation

    Barmpalias, George; Elwes, Richard; Lewis-Pye, Andrew

    2018-04-01

    Schelling’s model of segregation looks to explain the way in which particles or agents of two types may come to arrange themselves spatially into configurations consisting of large homogeneous clusters, i.e. connected regions consisting of only one type. As one of the earliest agent based models studied by economists and perhaps the most famous model of self-organising behaviour, it also has direct links to areas at the interface between computer science and statistical mechanics, such as the Ising model and the study of contagion and cascading phenomena in networks. While the model has been extensively studied it has largely resisted rigorous analysis, prior results from the literature generally pertaining to variants of the model which are tweaked so as to be amenable to standard techniques from statistical mechanics or stochastic evolutionary game theory. In Brandt et al (2012 Proc. 44th Annual ACM Symp. on Theory of Computing) provided the first rigorous analysis of the unperturbed model, for a specific set of input parameters. Here we provide a rigorous analysis of the model’s behaviour much more generally and establish some surprising forms of threshold behaviour, notably the existence of situations where an increased level of intolerance for neighbouring agents of opposite type leads almost certainly to decreased segregation.

  6. From particle segregation to the granular clock

    Lambiotte, R.; Salazar, J.M.; Brenig, L.

    2005-01-01

    Recently several authors studied the segregation of particles for a system composed of mono-dispersed inelastic spheres contained in a box divided by a wall in the middle. The system exhibited a symmetry breaking leading to an overpopulation of particles in one side of the box. Here we study the segregation of a mixture of particles composed of inelastic hard spheres and fluidized by a vibrating wall. Our numerical simulations show a rich phenomenology: horizontal segregation and periodic behavior. We also propose an empirical system of ODEs representing the proportion of each type of particles and the segregation flux of particles. These equations reproduce the major features observed by the simulations

  7. From particle segregation to the granular clock

    Lambiotte, R. [Physique Statistique, Plasmas et Optique Non-lineaire, Universite Libre de Bruxelles, Campus Plaine, Boulevard du Triomphe, Code Postal 231, 1050 Brussels (Belgium)]. E-mail: rlambiot@ulb.ac.be; Salazar, J.M. [Universite De Bougogne-LRRS UMR-5613 CNRS, Faculte des Sciences Mirande, 9 Av. Alain Savary, 21078 Dijon Cedex (France)]. E-mail: jmarcos@u-bourgogne.fr; Brenig, L. [Physique Statistique, Plasmas et Optique Non-lineaire, Universite Libre de Bruxelles, Campus Plaine, Boulevard du Triomphe, Code Postal 231, 1050 Brussels (Belgium)]. E-mail: lbrenig@ulb.ac.be

    2005-08-01

    Recently several authors studied the segregation of particles for a system composed of mono-dispersed inelastic spheres contained in a box divided by a wall in the middle. The system exhibited a symmetry breaking leading to an overpopulation of particles in one side of the box. Here we study the segregation of a mixture of particles composed of inelastic hard spheres and fluidized by a vibrating wall. Our numerical simulations show a rich phenomenology: horizontal segregation and periodic behavior. We also propose an empirical system of ODEs representing the proportion of each type of particles and the segregation flux of particles. These equations reproduce the major features observed by the simulations.

  8. Beam-loss induced pressure rise of Large Hadron Collider collimator materials irradiated with 158  GeV/u In^{49+} ions at the CERN Super Proton Synchrotron

    E. Mahner

    2004-10-01

    Full Text Available During heavy ion operation, large pressure rises, up to a few orders of magnitude, were observed at CERN, GSI, and BNL. The dynamic pressure rises were triggered by lost beam ions that impacted onto the vacuum chamber walls and desorbed about 10^{4} to 10^{7} molecules per ion. The deterioration of the dynamic vacuum conditions can enhance charge-exchange beam losses and can lead to beam instabilities or even to beam abortion triggered by vacuum interlocks. Consequently, a dedicated measurement of heavy-ion induced molecular desorption in the GeV/u energy range is important for Large Hadron Collider (LHC ion operation. In 2003, a desorption experiment was installed at the Super Proton Synchrotron to measure the beam-loss induced pressure rise of potential LHC collimator materials. Samples of bare graphite, sputter coated (Cu, TiZrV graphite, and 316 LN (low carbon with nitrogen stainless steel were irradiated under grazing angle with 158  GeV/u indium ions. After a description of the new experimental setup, the results of the pressure rise measurements are presented, and the derived desorption yields are compared with data from other experiments.

  9. Atomic scale study of grain boundary segregation before carbide nucleation in Ni-Cr-Fe Alloys

    Li, Hui; Xia, Shuang; Liu, Wenqing; Liu, Tingguang; Zhou, Bangxin

    2013-08-01

    tendency and Gibbs free energy of C in Alloy 690 is higher than in 304 SS, due to the higher bulk C concentration and the site competition of P atoms which segregate at grain boundary [29,30]. It is imply that the segregation tendency is influenced by the bulk concentration of the segregates. Si atoms slightly segregate at grain boundaries in Alloy 690, but do not segregate at grain boundaries in 304 SS. N and P atoms segregate at grain boundary in 304 SS, and their segregation Gibbs free energy are similar. N atoms may be exhausted by the TiN precipitated in the matrix and can not be observed in the grain boundary of Alloy 690 [19]. Mn atoms deplete at grain boundary in 304 SS. This phenomenon is similar to that of proton irradiation induced segregation in 304 SS [32]. B, C, N, P segregation Gibbs energies are similar both in 304 SS and Alloy 690. B and C atoms segregate at grain boundary both in Alloy 690 and 304 SS, P and N segregate at grain boundary in 304 SS. Si atoms segregate at grain boundary in Alloy 690, but do not segregate at grain boundary in 304 SS. Cr enriches at grain boundary both in Alloy 690 and 304 SS, although carbide does not nucleate. Ni and Fe may segregate, deplete or homogeneously distribute at grain boundary in Alloy 690, but they deplete at grain boundary in 304 SS. C and Cr atoms co-segregate at grain boundaries before carbide nucleation in Alloy 690 and 304 SS. Combination with other results in literatures, the evolution of Cr concentration at grain boundary should be enrichment at grain boundary before carbide nucleation, depletion at grain boundary after carbide precipitation, and healing after obvious growth of carbide. After aging treatment at 500 °C for 0.5 h, the total reduction of grain boundary free energy due to segregation is 27.489 kJ/mol for Alloy 690 and 45.207 kJ/mol for 304.

  10. Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study

    Kanakaraju, S; Sood, AK; Mohan, S

    2000-01-01

    We report on the growth and interfaces of ultrathin polycrystalline Ge and Si films when they are grown on each other using ion beam sputter deposition with and without surfactant at different growth temperatures, studied using interference enhanced Raman spectroscopy. Ge films grown on Si without surfactant show Ge segregation at the interfaces forming an alloy of GexSi1-x as indicated by the Ge-Si Raman mode. However, use of Sb as surfactant strongly suppresses the intermixing. Also Si film...

  11. Scaling properties of charged particle multiplicity distributions in oxygen induced emulsion interactions at 14.6, 60 and 200 A GeV

    Adamovich, M.I.; Aggarwal, M.M.; Arora, R.

    1988-12-01

    The multiplicity distributions of shower particles (n s ) are measured in inclusive inelastic oxygen emulsion interactions. Scaling in observed in the normalized variable n s / ave.(n s ) for 14.6, 60 and 200 A GeV. The dependence of ave. (n s ) on the charge flow in the forward direction (Q ZD ) and the distribution of the number of participating projectile protons is examined. The normalized multiplicities as a function of Q ZD seem also to be independent of incident energies. A comparison with the Lund Model Fritiof yields satisfactory agreement. (authors)

  12. Residential Segregation in Texas in 1980.

    Hwang, Sean-Shong; Murdock, Steve H.

    1982-01-01

    Between 1970 and 1980 racial and ethnic segregation for major Texas cities declined for all groups, but declines were small between Anglo and Spanish groups. Segregation is unaffected by variation in size of city, percent of population that is Spanish or Black, or central city status. (Author/AM)

  13. Housing Systems and Ethnic Spatial Segregation

    Andersen, Hans Skifter; Andersson, Roger; Wessel, Terje

    Residential spatial segregation is related to housing markets and housing policies. In this paper, ethnic segregation is compared across four Nordic capitals and explanations for the differences are examined by comparing the housing markets and housing policies of the countries. The housing markets...

  14. Losing Ground: School Segregation in Massachuestts

    Ayscue, Jennifer B.; Greenberg, Alyssa

    2013-01-01

    Though once a leader in school integration, Massachusetts has regressed over the last two decades as its students of color have experienced intensifying school segregation. This report investigates trends in school segregation in Massachusetts by examining concentration, exposure, and evenness measures by both race and class. First, the report…

  15. Occupational Segregation by Sex: Determinants and Changes.

    Beller, Andrea H.

    1982-01-01

    This study found that occupational sex segregation began to diminish during the 1970s, in conjunction with enforcement of the equal employment opportunity laws against sex discrimination in employment. The success of these laws suggests that discrimination was originally a determinant of occupational segregation. (Author/SK)

  16. Sex Segregation in Undergraduate Engineering Majors

    Litzler, Elizabeth

    2010-01-01

    Gender inequality in engineering persists in spite of women reaching parity in college enrollments and degrees granted. To date, no analyses of educational sex segregation have comprehensively examined segregation within one discipline. To move beyond traditional methods of studying the long-standing stratification by field of study in higher…

  17. Administrative Segregation for Mentally Ill Inmates

    O'Keefe, Maureen L.

    2007-01-01

    Largely the result of prison officials needing to safely and efficiently manage a volatile inmate population, administrative segregation or supermax facilities are criticized as violating basic human needs, particularly for mentally ill inmates. The present study compared Colorado offenders with mental illness (OMIs) to nonOMIs in segregated and…

  18. Class, Kinship Density, and Conjugal Role Segregation.

    Hill, Malcolm D.

    1988-01-01

    Studied conjugal role segregation in 150 married women from intact families in working-class community. Found that, although involvement in dense kinship networks was associated with conjugal role segregation, respondents' attitudes toward marital roles and phase of family cycle when young children were present were more powerful predictors of…

  19. A sexy spin on nonrandom chromosome segregation.

    Charville, Gregory W; Rando, Thomas A

    2013-06-06

    Nonrandom chromosome segregation is an intriguing phenomenon linked to certain asymmetric stem cell divisions. In a recent report in Nature, Yadlapalli and Yamashita (2013) observe nonrandom segregation of X and Y chromosomes in Drosophila germline stem cells and shed light on the complex mechanisms of this fascinating process. Copyright © 2013 Elsevier Inc. All rights reserved.

  20. Sub-nanosecond laser-induced structural changes in the phase change material Ge2Sb2Te5 measured by an optical pump/x-ray probe technique: Structural snapshots with a 500 ps shutter

    Fons, P.; Brewe, D.; Stern, E.; Kolobov, A.V.; Fukaya, T.; Suzuki, M.; Uruga, T.; Kawamura, N.; Takagaki, M.; Ohsawa, H.; Tanida, H.; Tominaga, J.

    2007-01-01

    Phase-change alloys are characterized by reversible switching between amorphous and crystalline phases either by laser irradiation or by an electric programming current; the resulting changes in material properties can be used for non-volatile data storage. Switching typically occurs on nanosecond or less time scales. Considering the conflicting requirements for high-speed switching, yet long term data storage integrity, a deeper understanding of the switching processes in these materials is essential for insightful application development. Although, high-speed optical pump/probe observations have been made of reflectivity changes during the Ge 2 Sb 2 Te 5 switching process, due to the nanosecond order time scales involved little is known about the corresponding changes in structure. In addition as the amorphous phase does not diffract, its structural analysis is not amenable to analysis by high-speed diffraction techniques. We have used synchrotron-based time-resolved x-ray absorption fine structure spectroscopy (XAFS), a technique equally suitable for amorphous and crystalline phases to elaborate details in structural changes in the phase-change process. We report on two experiments using high-speed pulsed lasers that serve as optical pumps to induced material changes followed by synchrotron produced x-ray burst that serve as a time resolved structural probe. The first experiment carried out at the Advanced Photon source focuses on changes due to heating in the amorphous phase. Our experimental results indicate that the maximum temperature reached during the re-amorphization process are less than the melting point indicated in the bulk phase diagram of Ge 2 Sb 2 Te 5 reaching a maximum temperature of 620 C and in addition, do not share the same bond length distribution of a true melt. These findings strongly suggest the possibility of non-thermal melting. In the second experiment, we have obtained near-edge x-ray absorption data for a Ge 2 Sb 2 Te 5 film in the

  1. Grain boundary segregation and intergranular failure

    White, C.L.

    1980-01-01

    Trace elements and impurities often segregate strongly to grain boundaries in metals and alloys. Concentrations of these elements at grain boundaries are often 10 3 to 10 5 times as great as their overall concentration in the alloy. Because of such segregation, certain trace elements can exert a disproportionate influence on material properties. One frequently observed consequence of trace element segregation to grain boundaries is the occurrence of grain boundary failure and low ductility. Less well known are incidences of improved ductility and inhibition of grain boundary fracture resulting from trace element segregation to grain boundaries in certain systems. An overview of trace element segregation and intergranular failure in a variety of alloy systems as well as preliminary results from studies on Al 3% Li will be presented

  2. The dissociation of tumor-induced weight loss from hypoglycemia in a transplantable pluripotent rat islet tumor results in the segregation of stable alpha- and beta-cell tumor phenotypes

    Madsen, O D; Karlsen, C; Nielsen, E

    1993-01-01

    that of starved rats until death results from cachexia. After tumor resection, animals immediately resume normal feeding behavior. Comparative studies of hormone release and mRNA content in anorectic lines, MSL-G-AN and NHI-5B-AN, vs. those in the insulinoma line, MSL-G2-IN, revealed selective glucagon gene...... in animals carrying tumor necrosis factor-producing experimental tumors....... markers. By selective transplantation, it was possible to segregate stable anorectic normoglycemic tumor lines, MSL-G-AN and NHI-5B-AN, from both clones. These tumors cause an abrupt onset of anorexia when they reach a size of 400-500 mg (

  3. Calculations of neutron and proton induced reaction cross sections for actinides in the energy region from 10 MeV to 1 GeV

    Konshin, V.A.

    1995-01-01

    Several nuclear model codes were applied to calculations of nuclear data in the energy region from 10 MeV to 1 GeV. At energies up to 100 MeV the nuclear theory code GNASH was used for nuclear data calculation for incident neutrons for 238 U, 233-236 U, 238-242 Pu, 237 Np, 232 Th, 241-243 Am and 242-247 Cm. At energies from 100 MeV to 1 GeV the intranuclear cascade exciton model including the fission process was applied to calculations of protons and neutrons with 233 U, 235 U, 238 U, 232 Th, 232 Pa, 237 Np, 238 Np, 239 Pu, 241 Am, 242 Am and 242-248 Cm. Determination of parameter systematics was a major effort in the present work that was aimed at improving the predictive capability of the models used. An emphasis was made on a simultaneous analysis of data for a variety of reaction channels for the nucleus considered, as well as of data that are available for nearby nuclei or other incident particles. Comparison with experimental data available on multiple reaction cross sections, isotope yields, fission cross sections, particle multiplicities, secondary particle spectra, and double differential cross sections indicates that the calculations reproduce the trends, and often the details, of the experimental data. (author)

  4. Calculations of neutron and proton induced reaction cross sections for actinides in the energy region from 10MeV to 1GeV

    Konshin, V.A.

    1995-06-01

    Several nuclear model codes were applied to calculations of nuclear data in the energy region from 10MeV to 1GeV. At energies up to 100MeV the nuclear theory code GNASH was used for nuclear data calculation for neutrons incident for on 238 U, 233-236 U, 238-242 Pu, 237 Np, 232 Th, 241-243 Am and 242-247 Cm. At energies from 100MeV to 1GeV the intranuclear cascade exciton model including the fission process was applied to calculations of protons and neutrons with 233 U, 235 U, 238 U, 232 Th, 232 Pa, 237 Np, 238 Np, 239 Pu, 241 Am, 242 Am and 242-248 Cm. Determination of parameter systematics was a major effort in the present work that was aimed at improving the predictive capability of the models used. An emphasis was placed upon a simultaneous analysis of data for a variety of reaction channels for the nuclei considered, as well as of data that are available for nearby nuclei or for other incident particles. Comparisons with experimental data available on multiple reaction cross sections, isotope yields, fission cross sections, particle multiplicities, secondary particle spectra, and double differential cross sections indicate that the calculations reproduce the trends, and often the details, of the measurements data. (author) 82 refs

  5. Evaporation induced diameter control in fiber crystal growth by micro-pulling-down technique: Bi{sub 4}Ge{sub 3}O{sub 12}

    Chani, V.; Lebbou, K.; Hautefeuille, B.; Tillement, O. [Physical Chemistry of Luminescent Materials, Claude Bernard Lyon1 University, CNRS UMR 5620, Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne Cedex (France); Fourmigue, J.M. [FiberCryst, 23 rue Royale, F-69001 Lyon (France)

    2006-10-15

    Diameter self-control was established in Bi{sub 4}Ge{sub 3}O{sub 12} fiber crystal growth by micro-pulling-down technique. In accordance with Bi{sub 2}O{sub 3}-GeO{sub 2} phase diagram, the diameter was controlled due to compensation of solidification with evaporation of volatile Bi{sub 2}O{sub 3} self-flux charged into the crucible with excess. The crucibles had capillary channels of 310 or 650 {mu}m in outer diameter. The crystals up to 400 mm long and 50-300 {mu}m in diameter were grown at pulling-down rates of 0.04-1.00 mm/min. The melt composition and the pulling rate were generally only two parameters determining solidification rate. As a result, crystals with uniform ({+-} 10%) diameter and aspect ratio up to 10{sup 4} were produced without automation of the process. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

    Shklyaev, Alexander, E-mail: shklyaev@isp.nsc.ru [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya [National Institute of Advanced Industrial Science and Technology, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562 (Japan)

    2015-05-28

    The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface.

  7. The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

    Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

    2018-03-01

    We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

  8. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

    Shklyaev, Alexander; Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya

    2015-01-01

    The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface

  9. Field-induced magnetic phase transitions and correlated electronic states in the hexagonal RAgGE and RPtIn series

    Morosan, Emilia [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    The present work was initially motivated by the desire to continue the study of complex metamagnetism in relation to the crystal structure of various compounds; this study already included tetragonal compounds like HoNi2B2C (Canfield 1997b; Kalatsky 1998) and DyAgSb2 (Myers 1999), in which the rare earths occupy unique tetragonal positions. We intended to find hexagonal systems suited for such a study, with complex metamagnetic properties, and the search for extremely anisotropic hexagonal compounds turned into a rewarding exploration. We identified and grew most of the heavy rare earth members of two isostructural series, RAgGe and RPtIn, both belonging to the hexagonal Fe2P family of materials. In each of these series we found one compound, TmAgGe, and TbPtIn respectively, that was suitable for a simple study of angular dependent metamagnetism: they had three rare earth ions in the unit cell, positioned at a unique crystallographic site with orthorhombic point symmetry. The magnetization of both TmAgGe and TbPtIn was extremely anisotropic, with larger values for the in-plane orientation of the applied field than in the axial direction. Complex metamagnetic transitions existed for field within the ab-plane, and, similar to the case of the tetragonal compounds RNi2B2C and DyAgSb2, they depended on the field orientation within the basal plane. We were thus able to develop a two-dimensional model, the three co-planar Ising-like systems model, which described well the angular dependence of the metamagnetic transitions in the TmAgGe and TbPtIn hexagonal compounds. Having three magnetic moments in the hexagonal unit cell, in orthorhombic point symmetry positions, added to the complexity of the analysis compared to the case of tetragonal compounds having one rare earth atom per unit cell, in tetragonal point symmetry. However, the three co-planar Ising-like systems model yielded complex, but

  10. Growth of Ge films by cluster beam deposition

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  11. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  12. Controlling mixing and segregation in time periodic granular flows

    Bhattacharya, Tathagata

    Segregation is a major problem for many solids processing industries. Differences in particle size or density can lead to flow-induced segregation. In the present work, we employ the discrete element method (DEM)---one type of particle dynamics (PD) technique---to investigate the mixing and segregation of granular material in some prototypical solid handling devices, such as a rotating drum and chute. In DEM, one calculates the trajectories of individual particles based on Newton's laws of motion by employing suitable contact force models and a collision detection algorithm. Recently, it has been suggested that segregation in particle mixers can be thwarted if the particle flow is inverted at a rate above a critical forcing frequency. Further, it has been hypothesized that, for a rotating drum, the effectiveness of this technique can be linked to the probability distribution of the number of times a particle passes through the flowing layer per rotation of the drum. In the first portion of this work, various configurations of solid mixers are numerically and experimentally studied to investigate the conditions for improved mixing in light of these hypotheses. Besides rotating drums, many studies of granular flow have focused on gravity driven chute flows owing to its practical importance in granular transportation and to the fact that the relative simplicity of this type of flow allows for development and testing of new theories. In this part of the work, we observe the deposition behavior of both mono-sized and polydisperse dry granular materials in an inclined chute flow. The effects of different parameters such as chute angle, particle size, falling height and charge amount on the mass fraction distribution of granular materials after deposition are investigated. The simulation results obtained using DEM are compared with the experimental findings and a high degree of agreement is observed. Tuning of the underlying contact force parameters allows the achievement

  13. Study of D(1285) → K+K-π0 decay and D(1285)- and E(1420)-mesons production in exclusive reactions, induced by π-- and K--mesons at 32.5 GeV/c

    Bitukov, S.I.; Viktorov, V.A.; Golovkin, S.V.

    1985-01-01

    D(1285) and E(1420)-mesons production in charge-exchange reactions induced by π - and K - -mesons at 32.5 GeV/c has been studied. The measured cross sections allowed one to derive limitations for the mixing angle in the axial-vector meson nonet. This means that E(1420)-meson consists mainly of strange quarks. The invariant mass distribution for the kaon pair in D(1285) → K + K - π 0 decay with statistics by an order of magnitude higher than the available data was obtained. The differential spectrum dN/dmsub(Ksup(+)Ksub(-)) analysis carried out in the delta-dominance model shows that delta(980)-meson cannot be described as a Breit-Wigner resonance with small width. The effective width for delta-meson at the point of √s=1 GeV/c 2 GITAsub(delta) is greater than 180 MeV/c 2 . It points to a strong coupling of delta-meson to hadrons

  14. A change of electronic state tuned by pressure: pressure-induced superconductivity of the antiferromagnet Ce{sub 2}Ni{sub 3}Ge{sub 5}

    Nakashima, M [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Kohara, H [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Thamizhavel, A [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Matsuda, T D [Advanced Science and Industrial Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki 319-1195 (Japan); Haga, Y [Advanced Science and Industrial Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki 319-1195 (Japan); Hedo, M [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581 (Japan); Uwatoko, Y [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581 (Japan); Settai, R [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Onuki, Y [Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Advanced Science and Industrial Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki 319-1195 (Japan)

    2005-07-20

    We measured the electrical resistivity of an antiferromagnet Ce{sub 2}Ni{sub 3}Ge{sub 5} with the orthorhombic crystal structure under pressure. The Neel temperature T{sub N} = 5.2K decreases with increasing pressure P and becomes zero at a critical P{sub c} {approx} 3.9 GPa. The A and {rho}{sub 0} values of the low-temperature electrical resistivity {rho} = {rho}{sub 0}+AT{sup 2} in the Fermi liquid relation increase steeply above 3 GPa. A value of A 10.7{omega}cmK{sup -2} at 3.9?GPa is comparable to A = 10{omega}cmK{sup -2} in a heavyfermion superconductor CeCu{sub 2}Si{sub 2}. The heavy fermion state was found to be formed around P{sub c}, in which pressure region superconductivity was found below 0.26K.

  15. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  16. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

    2012-01-01

    to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

  17. First-principles study of the effects of segregated Ga on an Al grain boundary

    Zhang Ying; Lu Guanghong; Wang Tianmin; Deng Shenghua; Shu Xiaolin; Kohyama, Masanori; Yamamoto, Ryoichi

    2006-01-01

    The effects of different amounts of segregated Ga (substitutional) on an Al grain boundary have been investigated by using a first-principles pseudopotential method. The segregated Ga is found to draw charge from the surrounding Al due to the electronegativity difference between Ga and Al, leading to a charge density reduction between Ga and Al as well as along the Al grain boundary. Such an effect can be enhanced by increasing the Ga segregation amount. With further Ga segregated, in addition to the charge-drawing effect that occurs in the Al-Ga interface, a heterogeneous α-Ga-like phase can form in the grain boundary, which greatly alters the boundary structure. These effects are suggested to be responsible for Ga-induced Al intergranular embrittlement

  18. Parton Dynamics Inferred from High-Mass Drell-Yan Dimuons Induced by 120 GeV p+D Interactions

    Ramson, Bryan J. [Michigan U.

    2018-01-01

    Fermilab Experiment 906/SeaQuest (E906/SeaQuest) is the latest in a well established tradition of studying leptoproduction from the annihilation of a quark and anti-quark, known as the Drell-Yan process. The broad goal of E906/SeaQuest is measuring various properties of nucleon structure in order to learn more about quarks and Quantum Chromodynamics (QCD), the mathematical description of the strong force. The present work investigated violations of the Lam-Tung relation between virtual photon polarization and quark and lepton angular momentum. The violation of Lam-Tung can be explained as the signature of quark-nucleon spin-orbit coupling through the use of the Transverse-Momentum-Dependent (TMD) framework, which assumes that the initial transverse momentum of quarks is smaller than the hard scattering scale, but also non-negligible. An analysis of the angular moments in Drell-Yan collected by E906/SeaQuest was performed with four different configurations in order to estimate the systematic errors attributed to each correction. After correction for background and error propagation, the final extraction of the azimuthal moment excluding contributions from the trigger was ν = 0.151 ± 0.88(stat.) ± 0.346(syst.) at an average transverse momentum of 0.87 ± 0.50 GeV/c and an average dimuon mass of 5.48 ± 0.70 GeV. In the future, the magnitude of the systematic errors on the extraction could potentially be reduced by improving the quality of the trigger efficiency calculation, improving the intensity dependent event reconstruction efficiency, considering the changes in acceptance due to a beam shift relative to the E906/SeaQuest spectrometer, and improving the modeling of background.

  19. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  20. Microscopic local bonding and optically-induced switching for Ge{sub 2}Sb{sub 2}Te{sub 5} alloys: A tale of four pseudo-binary and three binary tie-lines in Ge-Sb-Te phase field

    Lucovsky, G.; Baker, D.A.; Washington, J.P.; Paesler, M.A. [Department of Physics, North Carolina State University, Raleigh, NC (United States)

    2009-05-15

    Ge{sub 2}Sb{sub 2}Te{sub 5} (GST-225) has emerged as an active medium for applications in reversible, ReWritable (RW) optical memory discs. Many studies have focused on the properties of this alloy, relative to the other GST compositions on tie-lines in the Ge-Sb-Te ternary phase field; (i) Sb{sub 2}Te to GeTe{sub 2}: (ii) Sb{sub 2}Te{sub 3}: to GeTe; (iii) GeSb to Te: and (iv) the truncated tie-line from GST-124 to Sb. This article focuses instead on the binary atomic join-lines, Te-Ge, Ge-Sb and Sb-Te, that comprise the perimeter of the Ge-Sb-Te ternary diagram. Three eutectic compositions, one on each perimeter segment: (i) Ge{sub 12}Sb{sub 88}; (ii) Te{sub 25}Sb{sub 75}; and (iii) Ge{sub 17}Te{sub 83} have been identified. Focussing on the significance of these eutectic compositions, and (i) building on previous publications from our group, and (ii) relying on two recently published articles, a new model for the RW properties of GST-22T has been proposed. Finally comparisons are made between GST and AIST RW films. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Genes that bias Mendelian segregation.

    Grognet, Pierre; Lalucque, Hervé; Malagnac, Fabienne; Silar, Philippe

    2014-01-01

    Mendel laws of inheritance can be cheated by Meiotic Drive Elements (MDs), complex nuclear genetic loci found in various eukaryotic genomes and distorting segregation in their favor. Here, we identify and characterize in the model fungus Podospora anserina Spok1 and Spok2, two MDs known as Spore Killers. We show that they are related genes with both spore-killing distorter and spore-protecting responder activities carried out by the same allele. These alleles act as autonomous elements, exert their effects independently of their location in the genome and can act as MDs in other fungi. Additionally, Spok1 acts as a resistance factor to Spok2 killing. Genetical data and cytological analysis of Spok1 and Spok2 localization during the killing process suggest a complex mode of action for Spok proteins. Spok1 and Spok2 belong to a multigene family prevalent in the genomes of many ascomycetes. As they have no obvious cellular role, Spok1 and Spok2 Spore Killer genes represent a novel kind of selfish genetic elements prevalent in fungal genome that proliferate through meiotic distortion.

  2. Genes that bias Mendelian segregation.

    Pierre Grognet

    Full Text Available Mendel laws of inheritance can be cheated by Meiotic Drive Elements (MDs, complex nuclear genetic loci found in various eukaryotic genomes and distorting segregation in their favor. Here, we identify and characterize in the model fungus Podospora anserina Spok1 and Spok2, two MDs known as Spore Killers. We show that they are related genes with both spore-killing distorter and spore-protecting responder activities carried out by the same allele. These alleles act as autonomous elements, exert their effects independently of their location in the genome and can act as MDs in other fungi. Additionally, Spok1 acts as a resistance factor to Spok2 killing. Genetical data and cytological analysis of Spok1 and Spok2 localization during the killing process suggest a complex mode of action for Spok proteins. Spok1 and Spok2 belong to a multigene family prevalent in the genomes of many ascomycetes. As they have no obvious cellular role, Spok1 and Spok2 Spore Killer genes represent a novel kind of selfish genetic elements prevalent in fungal genome that proliferate through meiotic distortion.

  3. Veil: A Wall of Segregation

    Tayebeh Nowrouzi

    2015-08-01

    Full Text Available Moving behind the confines of the race has been the continuous efforts of African-Americans so as to reveal and confirm their true humanity and abilities to white race as well as their own race. African-Americans, Dubois posited, are shut out of the white America, inhabiting behind a vast veil which creates a deep division between the races. Veil is made of the fabric of racism interwoven thread by thread and imposed by white world. It is thrown discourteously and forcibly to the African-Americans whom their distorted images are imposed on them and their true humanity and identity are hidden behind the veil. This study overtakes to present how Loraine Hansberry, in her first and the most outstanding drama, A Raisin in the Sun examines the world within the veil. She demonstrated that Duboisian metaphoric veil is operating in the racist American society so that not only African-Americans are segregated physically and psychologically from the rest of the world but also are inflicted with obscurity of vision that are neither able to see themselves clearly nor be seen truly. On the other hand, it presents how the veil provides blacks with the second sight to observe and comprehend the racist nature of whites which is hidden and incomprehensible for them.

  4. The dissociation of tumor-induced weight loss from hypoglycemia in a transplantable pluripotent rat islet tumor results in the segregation of stable alpha- and beta-cell tumor phenotypes

    Madsen, O D; Karlsen, C; Nielsen, E

    1993-01-01

    in NEDH rats resulted in stable hypoglycemic insulinoma tumor lines, such as MSL-G2-IN. Occasionally, hypoglycemia as well as severe weight loss were observed in the early tumor passages of MSL-G and the subclone, NHI-5B, which carry the transfected neomycin and human insulin genes as unique clonal...... markers. By selective transplantation, it was possible to segregate stable anorectic normoglycemic tumor lines, MSL-G-AN and NHI-5B-AN, from both clones. These tumors cause an abrupt onset of anorexia when they reach a size of 400-500 mg (loss parallels...... a common clonal origin of pluripotent MSL cells, thus supporting the existence of a cell lineage relationship between islet alpha- and beta-cell during ontogeny; and 2) that our glucagonomas release an anorexigenic substance(s) of unknown nature that causes a severe weight loss comparable to that reported...

  5. Granular Segregation by an Oscillating Ratchet Mechanism

    Igarashi, A.; Horiuchi, Ch.

    2004-01-01

    We report on a method to segregate granular mixtures which consist of two kinds of particles by an oscillating ''ratchet'' mechanism. The segregation system has an asymmetrical sawtooth-shaped base which is vertically oscillating. Such a ratchet base produces a directional current of particles owing to its transport property. It is a counterintuitive and interesting phenomenon that a vertically vibrated base transports particles horizontally. This system is studied with numerical simulations, and it is found that we can apply such a system to segregation of mixtures of particles with different properties (radius or mass). Furthermore, we find out that an appropriate inclination of the ratchet-base makes the quality of segregation high. (author)

  6. Gender Differences in the Effect of Residential Segregation on Workplace Segregation among Newly Arrived Immigrants

    Tammaru, Tiit; Strömgren, Magnus; van Ham, Maarten; Danzer, Alexander M.

    2015-01-01

    Contemporary cities are becoming more and more diverse in population as a result of immigration. Research also shows that within cities residential neighborhoods are becoming ethnically more diverse, but that residential segregation has remained persistently high. High levels of segregation are often seen as negative, preventing integration of immigrants in their host society and having a negative impact on people's lives. Segregation research often focuses on residential neighborhoods, but i...

  7. Gender Segregation in the Retail Industry

    Lynch, Samantha

    2002-01-01

    This paper examines the phenomenon of occupational gender segregation in the retail industry, with a particular focus on part time working. The empirical data was gathered through a series of 59 interviews, and a small survey of employees, with store level managers in three UK retail organisations. The paper illustrates the extent of occupational gender segregation and considers the impact of such stereotyping on the gender pay gap, training and career development.\\ud \\ud Occupational gender ...

  8. Racial segregation patterns in selective universities

    Peter Arcidiacono; Esteban M. Aucejo; Andrew Hussey; Kenneth Spenner

    2013-01-01

    This paper examines sorting into interracial friendships at selective universities. We show significant friendship segregation, particularly for blacks. Indeed, blacks' friendships are no more diverse in college than in high school, despite the fact that the colleges that blacks attend have substantially smaller black populations. We demonstrate that the segregation patterns occur in part because affirmative action results in large differences in the academic backgrounds of students of differ...

  9. Growth and evolution of nickel germanide nanostructures on Ge(001)

    Grzela, T; Capellini, G; Schubert, M A; Schroeder, T; Koczorowski, W; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J

    2015-01-01

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer–Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous Ni_xGe_y wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the Ni_xGe_y terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular Ni_xGe_y 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110). (paper)

  10. Temperature-dependent photoluminescence analysis of 1-MeV electron irradiation-induced nonradiative recombination centers in GaAs/Ge space solar cells

    Tiancheng, Yi; Pengfei, Xiao; Yong, Zheng; Juan, Tang; Rong, Wang, E-mail: wangr@bnu.edu.cn

    2016-03-01

    The effects of irradiation of 1-MeV electrons on p{sup +}–n GaAs/Ge solar cells have been investigated by temperature-dependent photoluminescence (PL) measurements in the temperature range of 10–290 K. The temperature dependence of the PL peak energy agrees well with the Varnish relation, and the thermal quenching of the total integrated PL intensity is well explained by the thermal quenching theory. Meanwhile, the thermal quenching of temperature-dependent PL confirmed that there are two nonradiative recombination centers in the solar cells, and the thermal activation energies of these centers are determined by Arrhenius plots of the total integrated PL intensity. Furthermore, the nonradiative recombination center, as a primary defect, is identified as the H3 hole trap located at E{sub v} + 0.71 eV at room temperature and the H2 hole trap located at E{sub v} + 0.41 eV in the temperature range of 100–200 K, by comparing the thermal activation and ionization energies of the defects.

  11. Wavelet analysis of angular spectra of relativistic particles in 208Pb induced collisions with emulsion nuclei at 158A GeV/c

    Fedorisin, J.; Vokal, S.

    2008-01-01

    The continuous wavelet transform is applied to the pseudorapidity spectra of relativistic secondary particles created in Pb + Em nuclear collisions at 158A GeV/c. The wavelet pseudorapidity spectra are subsequently surveyed at different scales to look for signs of ring-like correlations whose presence could be explained either via the production of Cherenkov gluons or the propagation of Mach shock waves in excited nuclear medium. The presented approach is established on the basic prerequisite that the both effects would lead to excess of particles at certain typical pseudorapidities. Furthermore, the particles contributing to the ring-like structures are expected to have uniform azimuthal distributions. The multiscale analysis of the wavelet pseudorapidity spectra reveals the irregularities which are interpreted as the favoured pseudorapidities of groups of produced particles. A uniformity of the azimuthal structure of the disclosed pseudorapidity irregularities is examined, eventually leading to the conclusion that the irregularities are not related to correlations of a ring-like nature

  12. Energy levels of germanium, Ge I through Ge XXXII

    Sugar, J.; Musgrove, A.

    1993-01-01

    Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

  13. Gender Segregation in the Spanish Labor Market: An Alternative Approach

    del Rio, Coral; Alonso-Villar, Olga

    2010-01-01

    The aim of this paper is to study occupational segregation by gender in Spain, which is a country where occupational segregation explains a large part of the gender wage gap. As opposed to previous studies, this paper measures not only overall segregation, but also the segregation of several population subgroups. For this purpose, this paper uses…

  14. Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

    Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

    2017-06-01

    We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

  15. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  16. HP Ge planar detectors

    Gornov, M.G.; Gurov, Yu.B.; Soldatov, A.M.; Osipenko, B.P.; Yurkowski, J.; Podkopaev, O.I.

    1989-01-01

    Parameters of planar detectors manufactured of HP Ge are presented. The possibilities to use multilayer spectrometers on the base of such semiconductor detectors for nuclear physics experiments are discussed. It is shown that the obtained detectors including high square ones have spectrometrical characteristics close to limiting possible values. 9 refs.; 3 figs.; 1 tab

  17. The acoustic and perceptual cues affecting melody segregation for listeners with a cochlear implant.

    Jeremy eMarozeau

    2013-11-01

    Full Text Available Our ability to listen selectively to single sound sources in complex auditory environments is termed ‘auditory stream segregation.’ This ability is affected by peripheral disorders such as hearing loss, as well as plasticity in central processing such as occurs with musical training. Brain plasticity induced by musical training can enhance the ability to segregate sound, leading to improvements in a variety of auditory abilities. The melody segregation ability of 12 cochlear-implant recipients was tested using a new method to determine the perceptual distance needed to segregate a simple 4-note melody from a background of interleaved random-pitch distractor notes. In experiment 1, participants rated the difficulty of segregating the melody from distracter notes. Four physical properties of the distracter notes were changed. In experiment 2, listeners were asked to rate the dissimilarity between melody patterns whose notes differed on the four physical properties simultaneously. Multidimensional scaling analysis transformed the dissimilarity ratings into perceptual distances. Regression between physical and perceptual cues then derived the minimal perceptual distance needed to segregate the melody.The most efficient streaming cue for CI users was loudness. For the normal hearing listeners without musical backgrounds, a greater difference on the perceptual dimension correlated to the temporal envelope is needed for stream segregation in CI users. No differences in streaming efficiency were found between the perceptual dimensions linked to the F0 and the spectral envelope.Combined with our previous results in normally-hearing musicians and non-musicians, the results show that differences in training as well as differences in peripheral auditory processing (hearing impairment and the use of a hearing device influences the way that listeners use different acoustic cues for segregating interleaved musical streams.

  18. Search for {theta}(1540){sup +} in the exclusive proton-induced reaction p+C(N){yields}{theta}{sup +} anti K{sup 0}+C(N) at the energy of 70 GeV

    Antipov, Yu.M.; Artamonov, A.V.; Batarin, V.A.; Eroshin, O.V. [Inst. for High Energy Physics, Protvino (Russian Federation); Kolgamov, V.Z. [Inst. of Theoretical and Experimental Physics, Moscow (RU)] [and others

    2004-09-01

    A search for narrow {theta}(1540){sup +}, a candidate for pentaquark baryon with positive strangeness, has been performed in an exclusive proton-induced reaction p+C(N){yields}{theta}{sup +} anti K{sup 0}+C(N) on carbon nuclei or quasifree nucleons at E{sub beam}=70 GeV ({radical}(s)=11.5 GeV) studying nK{sup +}, pK{sub S}{sup 0} and pK{sub L}{sup 0} decay channels of {theta}(1540){sup +} in four different final states of the {theta}{sup +} anti K{sup 0} system. In order to assess the quality of the identification of the final states with neutron or K {sup 0} {sub L}, we reconstructed {lambda}(1520){yields}nK{sup 0}{sub S} and {phi}{yields}K{sup 0}{sub L}K{sup 0}{sub S} decays in the calibration reactions p+C(N){yields}{lambda}(1520)K{sup +}+C(N) and p+C(N){yields}p{phi}+C(N). We found no evidence for narrow pentaquark peak in any of the studied final states and decay channels. Assuming that the production characteristics of the {theta}{sup +} anti K{sup 0} system are not drastically different from those of the {lambda}(1520)K{sup +} and p{phi} systems, we established upper limits on the cross-section ratios {sigma}({theta}{sup +} anti K{sup 0})/{sigma}({lambda}(1520)K{sup +})< 0.02 and {sigma}({theta}{sup +} anti K{sup 0})/{sigma}(p{phi})< 0.15 at 90% CL and a preliminary upper limit for the forward hemisphere cross-section {sigma}({theta}{sup +} anti K{sup 0})< 30 nb/nucleon. (orig.)

  19. Pressure-induced amorphization and collapse of magnetic order in the type-I clathrate Eu8Ga16Ge30

    Mardegan, J. R. L.; Fabbris, G.; Veiga, L. S. I.; Adriano, C.; Avila, M. A.; Haskel, D.; Giles, C.

    2013-10-01

    We investigate the low temperature structural and electronic properties of the type-I clathrate Eu8Ga16Ge30 under pressure using x-ray powder diffraction (XRD), x-ray absorption near-edge structure (XANES), and x-ray magnetic circular dichroism (XMCD) techniques. The XRD measurements reveal a transition to an amorphous phase above 18 GPa. Unlike previous reports on other clathrate compounds, no volume collapse is observed prior to the crystalline-amorphous phase transition which takes place when the unit cell volume is reduced to 81% of its ambient pressure value. Fits of the pressure-dependent relative volume to a Murnaghan equation of state yield a bulk modulus B0=65±3 GPa and a pressure derivative B0'=3.3±0.5. The Eu L2-edge XMCD data shows quenching of the magnetic order at a pressure coincident with the crystalline-amorphous phase transition. This information along with the persistence of an Eu2+ valence state observed in the XANES spectra up to the highest pressure point (22 GPa) indicates that the suppression of XMCD intensity is due to the loss of long range magnetic order. When compared with other clathrates, the results point to the importance of guest ion-cage interactions in determining the mechanical stability of the framework structure and the critical pressure for amorphization. Finally, the crystalline structure is not found to recover after pressure release, resulting in an amorphous material that is at least metastable at ambient pressure and temperature.

  20. Vacancy-induced brittle to ductile transition of W-M co-doped Al3Ti (M=Si, Ge, Sn and Pb).

    Zhu, Mingke; Wu, Ping; Li, Qiulin; Xu, Ben

    2017-10-25

    We investigated the effect of vacancy formation on brittle (D0 22 ) to ductile (L1 2 -like) transition in Al 3 Ti using DFT calculations. The well-known pseudogap on the density of states of Al 3 Ti migrates towards its Fermi level from far above, via a W - M co-doping strategy, where M is Si, Ge, Sn or Pb respectively. In particular, by a W - M co-doping the underline electronic structure of the pseudogap approaches an octahedral (L1 2 : t 2g , e g ) from the tetragonal (D0 22 : e g , b 2g , a 1g , b 1g ) crystal field. Our calculations demonstrated that (1) a W-doping is responsible for the close up of the energy gap between a 1g and b 1g so that they tend to merge into an e g symmetry, and (2) all M-doping lead to a narrower gap between e g and b 2g (moving towards a t 2g symmetry). Thus, a brittle to ductile transition in Al 3 Ti is possible by adopting this W - M co-doping strategy. We further recommend the use of W-Pb co-doped Al 3 Ti to replace the less anodic Al electrode in Al-battery, due to its improved ductility and high Al diffusivity. Finally this study opens a new field in physics to tailor mechanical properties by manipulating electron energy level(s) towards higher symmetry via vacancy optimization.

  1. Adsorption-Driven Surface Segregation of the Less Reactive Alloy Component

    Andersson, Klas Jerker; Calle Vallejo, Federico; Rossmeisl, Jan

    2009-01-01

    Counterintuitive to expectations and all prior observations of adsorbate-induced surface segregation of the more reactive alloy component (the one forming the stronger bond with the adsorbate), we show that CO adsorption at elevated pressures and temperatures pulls the less reactive Cu to the sur......Counterintuitive to expectations and all prior observations of adsorbate-induced surface segregation of the more reactive alloy component (the one forming the stronger bond with the adsorbate), we show that CO adsorption at elevated pressures and temperatures pulls the less reactive Cu...... to the surface of a CuPt near-surface alloy. The Cu surface segregation is driven by the formation of a stable self-organized CO/CuPt surface alloy structure and is rationalized in terms of the radically stronger Pt−CO bond when Cu is present in the first surface layer of Pt. The results, which are expected...

  2. 3He induced reactions on natAg and 197Au at 1.8, 3.6 and 4.8 GeV

    Brzychczyk, J.; Jagiellonian Univ., Krakow; Pollacco, E.C.; Volant, C.; Legrain, R.; Kwiatkowski, K.; Morley, K.B.; Renshaw-Foxford, E.; Bracken, D.S.; Viola, V.E.; Yoder, N.R.

    1995-03-01

    The 3 He induced reactions on Ag and Au are studied using a large solid angle and low energy threshold detector array. The data show consistency with intranuclear cascade and expanding emitting source description. Charge moment analysis is presented. (author). 18 refs., 8 figs

  3. Racial Segregation and the American Foreclosure Crisis.

    Rugh, Jacob S; Massey, Douglas S

    2010-10-01

    Although the rise in subprime lending and the ensuing wave of foreclosures was partly a result of market forces that have been well-identified in the literature, in the United States it was also a highly racialized process. We argue that residential segregation created a unique niche of poor minority clients who were differentially marketed risky subprime loans that were in great demand for use in mortgage-backed securities that could be sold on secondary markets. We test this argument by regressing foreclosure actions in the top 100 U.S. metropolitan areas on measures of black, Hispanic, and Asian segregation while controlling for a variety of housing market conditions, including average creditworthiness, the extent of coverage under the Community Reinvestment Act, the degree of zoning regulation, and the overall rate of subprime lending. We find that black residential dissimilarity and spatial isolation are powerful predictors of foreclosures across U.S. metropolitan areas. In order to isolate subprime lending as the causal mechanism whereby segregation influences foreclosures, we estimate a two-stage least squares model that confirms the causal effect of black segregation on the number and rate of foreclosures across metropolitan areas. In the United States segregation was an important contributing cause of the foreclosure crisis, along with overbuilding, risky lending practices, lax regulation, and the bursting of the housing price bubble.

  4. Racial Segregation and the American Foreclosure Crisis

    Rugh, Jacob S.; Massey, Douglas S.

    2013-01-01

    Although the rise in subprime lending and the ensuing wave of foreclosures was partly a result of market forces that have been well-identified in the literature, in the United States it was also a highly racialized process. We argue that residential segregation created a unique niche of poor minority clients who were differentially marketed risky subprime loans that were in great demand for use in mortgage-backed securities that could be sold on secondary markets. We test this argument by regressing foreclosure actions in the top 100 U.S. metropolitan areas on measures of black, Hispanic, and Asian segregation while controlling for a variety of housing market conditions, including average creditworthiness, the extent of coverage under the Community Reinvestment Act, the degree of zoning regulation, and the overall rate of subprime lending. We find that black residential dissimilarity and spatial isolation are powerful predictors of foreclosures across U.S. metropolitan areas. In order to isolate subprime lending as the causal mechanism whereby segregation influences foreclosures, we estimate a two-stage least squares model that confirms the causal effect of black segregation on the number and rate of foreclosures across metropolitan areas. In the United States segregation was an important contributing cause of the foreclosure crisis, along with overbuilding, risky lending practices, lax regulation, and the bursting of the housing price bubble. PMID:25308973

  5. Optically – Induced diffusion and dissolution of Ag into thin films of (GeS2)0,8(Ga2S3)0,2

    Válková, S.; Wágner, T.; Bartoš, M.; Pavlišta, M.; Přikryl, J.; Vlček, Milan; Frumarová, Božena; Beneš, L.; Frumar, M.

    2011-01-01

    Roč. 13, 11-12 (2011), s. 1553-1558 ISSN 1454-4164. [5th International Conference on Amorphous and Nanostructured Chalcogenides. Bucharest - Magurele, 26.06.2011-01.07.2011] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenides * thin films * optically induced Subject RIV: CA - Inorganic Chemistry Impact factor: 0.457, year: 2011 http://joam.inoe.ro/index.php?option=magazine&op=view&idu=2964&catid=68

  6. Towards deep learning with segregated dendrites.

    Guerguiev, Jordan; Lillicrap, Timothy P; Richards, Blake A

    2017-12-05

    Deep learning has led to significant advances in artificial intelligence, in part, by adopting strategies motivated by neurophysiology. However, it is unclear whether deep learning could occur in the real brain. Here, we show that a deep learning algorithm that utilizes multi-compartment neurons might help us to understand how the neocortex optimizes cost functions. Like neocortical pyramidal neurons, neurons in our model receive sensory information and higher-order feedback in electrotonically segregated compartments. Thanks to this segregation, neurons in different layers of the network can coordinate synaptic weight updates. As a result, the network learns to categorize images better than a single layer network. Furthermore, we show that our algorithm takes advantage of multilayer architectures to identify useful higher-order representations-the hallmark of deep learning. This work demonstrates that deep learning can be achieved using segregated dendritic compartments, which may help to explain the morphology of neocortical pyramidal neurons.

  7. School Segregation and Racial Academic Achievement Gaps

    Sean F. Reardon

    2016-09-01

    Full Text Available Although it is clear that racial segregation is linked to academic achievement gaps, the mechanisms underlying this link have been debated since James Coleman published his eponymous 1966 report. In this paper, I examine sixteen distinct measures of segregation to determine which is most strongly associated with academic achievement gaps. I find clear evidence that one aspect of segregation in particular—the disparity in average school poverty rates between white and black students’ schools—is consistently the single most powerful correlate of achievement gaps, a pattern that holds in both bivariate and multivariate analyses. This implies that high-poverty schools are, on average, much less effective than lower-poverty schools and suggests that strategies that reduce the differential exposure of black, Hispanic, and white students to poor schoolmates may lead to meaningful reductions in academic achievement gaps.

  8. Electron-electron interaction in p-SiGe/Ge quantum wells

    Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

    2005-01-01

    The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

  9. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

    2012-02-03

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

  10. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Terziotti, Daniela; Bonera, Emiliano; Spinella, Corrado; Nicotra, Giuseppe

    2012-01-01

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (paper)

  11. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

  12. Chemical segregation and self polarisation in ferroelectrics

    Bernard E. Watts

    2009-06-01

    Full Text Available Chemical partitioning or segregation is commonly encountered in solid-state syntheses. It is driven by compositional, thermal and electric field gradients. These phenomena can be quite extreme in thin films and lead to notable effects on the electrical properties of ferroelectrics. The segregation in ferroelectric thin films will be illustrated and the mechanisms explained in terms of diffusion processes driven by a potential gradient of the oxygen. The hypothesis can also explain self polarisation and imprint in ferroelectric hysteresis.

  13. Particle segregation in pneumatic conveying lines

    McGlinchey, D.; Marjanovic, P.; Cook, S.; Jones, M.G. [Glasgow Caledonian University, Glasgow (United Kingdom). Centre for Industrial Bulk Solids Handling

    2000-07-01

    This investigation studied segregation of particles during pneumatic transport from a theoretical and experimental perspective. Dilute phase or suspension flow and dense phase (non-suspension flow) were both considered. A computer model was generated based on the conservation equations to investigate dilute phase conditions; an initial qualitative investigation of material behaviour being conveyed in dense phase was made with plastic pellets and salt as a segregating mixture in a small test rig and the results from a full scale test rig conveying two grades of coal of different size distributions are discussed. 11 refs., 9 figs., 1 tab.

  14. Magnetic and electrical properties of epitaxial GeMn

    Ahlers, Stefan

    2009-01-15

    In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

  15. Engineering economic evaluations of trash segregation alternatives

    Collins, H.E.

    1987-01-01

    Health physicists are becoming increasingly involved in the selection of equipment to segregate a contaminated trash from clean trash in the effort to reduce low level waste disposal costs. Although well qualified to evaluate the technical merits of different equipment, health physicists also need to be aware of the elements of economic comparisons of different alternatives that meet all technical requirements

  16. Koedukation oder Geschlechtertrennung = Coeducation or Gender Segregation.

    Baumert, Jurgen

    1992-01-01

    Presents study results examining recruitment practice differences between coeducational and gender segregated secondary schools in Germany. Discusses the impact of organizational form on teacher judgments, achievement in specific subjects, school subject-related interests, and school commitment. Reports that under conditions of free school choice,…

  17. Segregation reinforced by urban planning | IDRC - International ...

    2015-10-28

    Oct 28, 2015 ... ... What is driving urban violence? Segregated urban planning can leave a legacy of community tension and insecurity. Potential solutions? Include vulnerable communities in city planning decisions; invest in transport infrastructure; and regularly update city development plans to reflect population growth.

  18. 49 CFR 176.83 - Segregation.

    2010-10-01

    ... presence of one or more steel bulkheads or decks between them or a combination thereof. Intervening spaces... substance but vary only in their water content (for example, sodium sulfide in Division 4.2 or Class 8) or... applied. (11) Certain exceptions from segregation for waste cyanides or waste cyanide mixtures or...

  19. Plasmid and chromosome segregation in prokaryotes

    Møller-Jensen, Jakob; Bugge Jensen, Rasmus; Gerdes, Kenn

    2000-01-01

    Recent major advances in the understanding of prokaryotic DNA segregation have been achieved by using fluorescence microscopy to visualize the localization of cellular components. Plasmids and bacterial chromosomes are partitioned in a highly dynamic fashion, suggesting the presence of a mitotic...

  20. Educational Justice, Segregated Schooling and Vocational Education

    Giesinger, Johannes

    2017-01-01

    The philosophical debate on educational justice currently focusses on the Anglo-American situation. This essay brings in an additional perspective. It provides a justice-oriented critique of the segregated education systems in German-speaking countries. First, arguments that are commonly put forward in favour of these systems are rejected. Second,…

  1. A Social Network Analysis of Occupational Segregation

    Buhai, Ioan Sebastian; van der Leij, Marco

    We develop a social network model of occupational segregation between different social groups, generated by the existence of positive inbreeding bias among individuals from the same group. If network referrals are important for job search, then expected homophily in the contact network structure...

  2. Sex segregation in undergraduate engineering majors

    Litzler, Elizabeth

    Gender inequality in engineering persists in spite of women reaching parity in college enrollments and degrees granted. To date, no analyses of educational sex segregation have comprehensively examined segregation within one discipline. To move beyond traditional methods of studying the long-standing stratification by field of study in higher education, I explore gender stratification within one field: engineering. This dissertation investigates why some engineering disciplines have a greater representation of women than other engineering disciplines. I assess the individual and institutional factors and conditions associated with women's representation in certain engineering departments and compare the mechanisms affecting women's and men's choice of majors. I use national data from the Engineering Workforce Commission, survey data from 21 schools in the Project to Assess Climate in Engineering study, and Carnegie Foundation classification information to study sex segregation in engineering majors from multiple perspectives: the individual, major, institution, and country. I utilize correlations, t-tests, cross-tabulations, log-linear modeling, multilevel logistic regression and weighted least squares regression to test the relative utility of alternative explanations for women's disproportionate representation across engineering majors. As a whole, the analyses illustrate the importance of context and environment for women's representation in engineering majors. Hypotheses regarding hostile climate and discrimination find wide support across different analyses, suggesting that women's under-representation in certain engineering majors is not a question of choice or ability. However, individual level factors such as having engineering coursework prior to college show an especially strong association with student choice of major. Overall, the analyses indicate that institutions matter, albeit less for women, and women's under-representation in engineering is not

  3. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

    Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2017-07-01

    Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

  4. Ab-initio study of surface segregation in aluminum alloys

    Qin, Yifa, E-mail: yfqin10s@imr.ac.cn; Wang, Shaoqing

    2017-03-31

    Highlights: • A thorough study of surface segregation energies of 41 elements in Al is performed. • Segregation energies vary periodically with the atomic numbers of impurities. • 41 elements are classified into 3 groups according to the signs of segregation energies. • The results are validated by the surface/total concentration ratio in Al alloys. - Abstract: We have calculated surface segregation energies of 41 impurities by means of density functional theory calculations. An interesting periodical variation tendency was found for surface segregation energies derived. For the majority of main group elements, segregation energies are negative which means solute elements enrichment at Al surface is energetically more favorable than uniformly dissolution. Half of transition elements possess positive segregation energies and the energies are sensitive to surface crystallographic orientations. A strong correlation is found between the segregation energies at the Al surface and the surface energ of solute elements.

  5. Charles J. McMahon Interfacial Segregation and Embrittlement Symposium

    Vitek, Vaclav

    2003-01-01

    .... McMahon Interfacial Segregation and Embrittlement Symposium: Grain Boundary Segregation and Fracture in Steels was sponsored by ASM International, Materials Science Critical Technology Sector, Structural Materials Division, Materials Processing...

  6. Influence of sulfur, phosphorus, and antimony segregation on the intergranular hydrogen embrittlement of nickel

    Bruemmer, S.M.; Baer, D.R.; Jones, R.H.; Thomas, M.T.

    1983-01-01

    The effectiveness of sulfur, phosphorus, and antimony in promoting the intergranular embrittlement of nickel was investigated using straining electrode tests in 1N H 2 SO 4 at cathodic potentials. Sulfur was found to be the critical grain boundary segregant due to its large enrichment at grain boundaries (10 4 to 10 5 times the bulk content) and the direct relationship between sulfur coverage and hydrogeninduced intergranular failure. Phosphorus was shown to be significantly less effective than sulfur or antimony in inducing the intergranular hydrogen embrittlement of nickel. The addition of phosphoru to nickel reduced the tendency for intergranular fracture and improved ductility because phosphoru segregated strongly to grain interfaces and limited sulfur enrichment. The hydrogen embrittling potency of antimony was also less than that of sulfur while its segregation propensity was considerably less. It was found that the effectiveness of segregated phosphorus and antimony in prompting inter granular embrittlement vs that of sulfur could be expressed in terms of an equivalent grain boundary sulfur coverage. The relative hydrogen embrittling potencies of sulfur, phosphorus, and antimony are discussed in reference to general mechanisms for the effect of impurity segregation on hydrogeninduced intergranular fracture

  7. Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

    Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

    2006-01-01

    Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

  8. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  9. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-01-01

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

  10. Relativistically Induced Transparency Acceleration (RITA) - laser-plasma accelerated quasi-monoenergetic GeV ion-beams with existing lasers?

    Sahai, Aakash A.

    2013-10-01

    Laser-plasma ion accelerators have the potential to produce beams with unprecedented characteristics of ultra-short bunch lengths (100s of fs) and high bunch-charge (1010 particles) over acceleration length of about 100 microns. However, creating and controlling mono-energetic bunches while accelerating to high-energies has been a challenge. If high-energy mono-energetic beams can be demonstrated with minimal post-processing, laser (ω0)-plasma (ωpe) ion accelerators may be used in a wide-range of applications such as cancer hadron-therapy, medical isotope production, neutron generation, radiography and high-energy density science. Here we demonstrate using analysis and simulations that using relativistic intensity laser-pulses and heavy-ion (Mi ×me) targets doped with a proton (or light-ion) species (mp ×me) of trace density (at least an order of magnitude below the cold critical density) we can scale up the energy of quasi-mono-energetically accelerated proton (or light-ion) beams while controlling their energy, charge and energy spectrum. This is achieved by controlling the laser propagation into an overdense (ω0 RITA). Desired proton or light-ion energies can be achieved by controlling the velocity of the snowplow, which is shown to scale inversely with the rise-time of the laser (higher energies for shorter pulses) and directly with the scale-length of the plasma density gradient. Similar acceleration can be produced by controlling the increase of the laser frequency (Chirp Induced Transparency Acceleration, ChITA). Work supported by the National Science Foundation under NSF- PHY-0936278. Also, NSF-PHY-0936266 and NSF-PHY-0903039; the US Department of Energy under DEFC02-07ER41500, DE- FG02-92ER40727 and DE-FG52-09NA29552.

  11. Models of mass segregation at the Galactic Centre

    Freitag, Marc; Amaro-Seoane, Pau; Kalogera, Vassiliki

    2006-01-01

    We study the process of mass segregation through 2-body relaxation in galactic nuclei with a central massive black hole (MBH). This study has bearing on a variety of astrophysical questions, from the distribution of X-ray binaries at the Galactic centre, to tidal disruptions of main- sequence and giant stars, to inspirals of compact objects into the MBH, an important category of events for the future space borne gravitational wave interferometer LISA. In relatively small galactic nuclei, typical hosts of MBHs with masses in the range 10 4 - 10 7 M o-dot , the relaxation induces the formation of a steep density cusp around the MBH and strong mass segregation. Using a spherical stellar dynamical Monte-Carlo code, we simulate the long-term relaxational evolution of galactic nucleus models with a spectrum of stellar masses. Our focus is the concentration of stellar black holes to the immediate vicinity of the MBH. Special attention is given to models developed to match the conditions in the Milky Way nucleus

  12. TMAP/CKAP2 is essential for proper chromosome segregation.

    Hong, Kyung Uk; Kim, Eunhee; Bae, Chang-Dae; Park, Joobae

    2009-01-15

    Tumor-associated microtubule-associated protein (TMAP), also known as cytoskeleton associated protein 2 (CKAP2), is a novel mitotic spindle-associated protein which is frequently up-regulated in various malignances. However, its cellular functions remain unknown. Previous reports suggested that the cellular functions of TMAP/CKAP2 pertain to regulation of the dynamics and assembly of the mitotic spindle. To investigate its role in mitosis, we studied the effects of siRNA-mediated depletion of TMAP/CKAP2 in cultured mammalian cells. Unexpectedly, TMAP/CKAP2 knockdown did not result in significant alterations of the spindle apparatus. However, TMAP/CKAP2-depleted cells often exhibited abnormal nuclear morphologies, which were accompanied by abnormal organization of the nuclear lamina, and chromatin bridge formation between two daughter cell nuclei. Time lapse video microscopy revealed that the changes in nuclear morphology and chromatin bridge formations observed in TMAP/CKAP2-depleted cells are the result of defects in chromosome segregation. Consistent with this, the spindle checkpoint activity was significantly reduced in TMAP/CKAP2-depleted cells. Moreover, chromosome missegregation induced by depletion of TMAP/CKAP2 ultimately resulted in reduced cell viability and increased chromosomal instability. Our present findings demonstrate that TMAP/CKAP2 is essential for proper chromosome segregation and for maintaining genomic stability.

  13. 41 CFR 60-1.8 - Segregated facilities.

    2010-07-01

    ... 41 Public Contracts and Property Management 1 2010-07-01 2010-07-01 true Segregated facilities. 60...; Compliance Reports § 60-1.8 Segregated facilities. To comply with its obligations under the Order, a contractor must ensure that facilities provided for employees are provided in such a manner that segregation...

  14. Gender Segregation in Nursery School: Predictors and Outcomes.

    Maccoby, Eleanor E.; Jacklin, Carol Nagy

    Sex segregation is a powerful phenomenon in childhood. It occurs universally whenever children have a choice of playmates and is found in sub-human primates too. Adults are not directly responsible for sex segregation. Data do not support the hypothesis that the most ladylike girls and the most rough and active boys first form the segregated play…

  15. "E Pluribus"... Separation: Deepening Double Segregation for More Students

    Orfield, Gary; Kucsera, John; Siegel-Hawley, Genevieve

    2012-01-01

    This report shows segregation has increased dramatically across the country for Latino students, who are attending more intensely segregated and impoverished schools than they have for generations. The segregation increases have been the most dramatic in the West. The typical Latino student in the region attends a school where less than a quarter…

  16. Segregation effects and phase developments during solidification of alloy 625

    Højerslev, Christian; Tiedje, Niels Skat; Hald, John

    2006-01-01

    contained gamma-phase, Laves phase and, if carbon was dissolved in the liquid, niobium rich carbides formed. Molybdenum and niobium showed strong tendencies to segregate. Their segregation was balanced by inverse segregation of nickel and iron. The chromium concentration remained almost constant in gamma...

  17. Requirements for the evaluation of computational speech segregation systems

    May, Tobias; Dau, Torsten

    2014-01-01

    Recent studies on computational speech segregation reported improved speech intelligibility in noise when estimating and applying an ideal binary mask with supervised learning algorithms. However, an important requirement for such systems in technical applications is their robustness to acoustic...... associated with perceptual attributes in speech segregation. The results could help establish a framework for a systematic evaluation of future segregation systems....

  18. Residential segregation of socioeconomic variables and health indices in Iran

    Seyed Saeed Hashemi Nazari

    2013-01-01

    Conclusions: Correlation of segregation of determinants of socioeconomic status with segregation of health indices is an indicator of existence of hot zones of health problems across some provinces. Further studies using multilevel modeling and individual data in health outcomes at individual level and segregation measures at appropriate geographic levels are required to confirm these relations.

  19. Ge/SiGe superlattices for nanostructured thermoelectric modules

    Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

    2013-01-01

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

  20. Structure of 78Ge from the 76Ge(t,p)78Ge reaction

    Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

    1978-01-01

    The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

  1. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  2. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    2010-08-05

    ...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

  3. Formation and de-excitation of hot nuclei in reactions induced by proton beams (475 MeV and 2 GeV) and {sup 3}He beam (2 GeV); Formation et desexcitation des noyaux chauds dans les reactions induites par des faisceaux de protons (475 MeV et 2 GeV) et d`{sup 3}He(2 GeV)

    Ledoux, X.

    1995-04-01

    We are studying the formation and the de-excitation of hot nuclei created in reactions induced by light high energy projectiles. These reactions, described in a two step model: an intranuclear cascade followed by an evaporation phase, produce nuclei in which the collective modes (compression, rotation, deformation) are weakly excited. By measuring the neutron multiplicities, event by event with ORION, and the light charged particle energies and multiplicities one can evaluate the excitation energy distribution of the nuclei. At the same time, theoretical simulations are carried out using the intranuclear cascade code developed by J. Cugnon and the statistical de-excitation code GEMINI. The good agreement with experimental results indicate that 10% of the p-nucleus interactions lead to temperatures greater than 5 MeV. The observation of the fission of a nucleus with a temperature close to 5 MeV shows that the nucleus behaves as a set of bound nucleons and, that the temperature stability limit is not yet reached. The observed decline of fission probability at high excitation energies is most likely to be correlated to the appearance of an other de-excitation process (evaporation residues emission or multifragmentation) which could not be experimentally detected. Finally, in the last chapter, we briefly present the principle of transmutation for long-lived nuclear waste with a proton accelerator and underline the interest of the present work in such studies. (author). 54 refs., 80 figs., 13 tabs.

  4. Growth strategies to control tapering in Ge nanowires

    P. Periwal

    2014-04-01

    Full Text Available We report the effect of PH3 on the morphology of Au catalyzed Ge nanowires (NWs. Ge NWs were grown on Si (111 substrate at 400 °C in the presence of PH3, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH3/GeH4 ratio causes passivation at NW surface. At high PH3 concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH3 flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH3-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  5. Sister chromatid segregation in meiosis II

    Wassmann, Katja

    2013-01-01

    Meiotic divisions (meiosis I and II) are specialized cell divisions to generate haploid gametes. The first meiotic division with the separation of chromosomes is named reductional division. The second division, which takes place immediately after meiosis I without intervening S-phase, is equational, with the separation of sister chromatids, similar to mitosis. This meiotic segregation pattern requires the two-step removal of the cohesin complex holding sister chromatids together: cohesin is removed from chromosome arms that have been subjected to homologous recombination in meiosis I and from the centromere region in meiosis II. Cohesin in the centromere region is protected from removal in meiosis I, but this protection has to be removed—deprotected”—for sister chromatid segregation in meiosis II. Whereas the mechanisms of cohesin protection are quite well understood, the mechanisms of deprotection have been largely unknown until recently. In this review I summarize our current knowledge on cohesin deprotection. PMID:23574717

  6. Segregation effects in welded stainless steels

    Akhter, J.I.; Shoaid, K.A.; Ahmed, M.; Malik, A.Q.

    1987-01-01

    Welding of steels causes changes in the microstructure and chemical composition which could adversely affect the mechanical and corrosion properties. The report describes the experimental results of an investigation of segregation effects in welded austenitic stainless steels of AISI type 304, 304L, 316 and 316L using the techniques of scanning electron microscopy and electron probe microanalysis. Considerable enhancement of chromium and carbon has been observed in certain well-defined zones on the parent metal and on composition, particularly in the parent metal, in attributed to the formation of (M 23 C 6 ) precipitates. The formation of geometrically well-defined segregation zones is explained on the basis of the time-temperature-precipitation curve of (M 23 C 6 ). (author)

  7. Phase Segregation in Polystyrene?Polylactide Blends

    Leung, Bonnie; Hitchcock, Adam; Brash, John; Scholl, Andreas; Doran, Andrew

    2010-06-09

    Spun-cast films of polystyrene (PS) blended with polylactide (PLA) were visualized and characterized using atomic force microscopy (AFM) and synchrotron-based X-ray photoemission electron microscopy (X-PEEM). The composition of the two polymers in these systems was determined by quantitative chemical analysis of near-edge X-ray absorption signals recorded with X-PEEM. The surface morphology depends on the ratio of the two components, the total polymer concentration, and the temperature of vacuum annealing. For most of the blends examined, PS is the continuous phase with PLA existing in discrete domains or segregated to the air?polymer interface. Phase segregation was improved with further annealing. A phase inversion occurred when films of a 40:60 PS:PLA blend (0.7 wt percent loading) were annealed above the glass transition temperature (Tg) of PLA.

  8. Segregation in welded nickel-base alloys

    Akhtar, J.I.; Shoaib, K.A.; Ahmad, M.; Shaikh, M.A.

    1990-05-01

    Segregation effects have been investigated in nickel-base alloys monel 400, inconel 625, hastelloy C-276 and incoloy 825, test welded under controlled conditions. Deviations from the normal composition have been observed to varying extents in the welded zone of these alloys. Least effect of this type occurred in Monel 400 where the content of Cu increased in some of the areas. Enhancement of Al and Ti has been found over large areas in the other alloys which has been attributed to the formation of low melting slag. Another common feature is the segregation of Cr, Fe or Ti, most likely in the form of carbides. Enrichment of Al, Ti, Nb, Mb, Mo, etc., to different amounts in some of the areas of these materials is in- terpretted in terms of the formation of gamma prime precipitates or of Laves phases. (author)

  9. Underemployment in a gender segregated labour market

    Kjeldstad, Randi; Nymoen, Erik H.

    2010-01-01

    This article analyses factors behind underemployment in Norway and has a focus on gender. The analysis, based on Labour Force Survey data, shows that economic fluctuations during the latest one and a half decade bring about changing underemployment levels of both women and men. The Norwegian labour market is strongly gender segregated and the processes and characteristics of underemployment differ between male and female dominated labour market sectors. The former sectors are generally more e...

  10. Blood Cell Interactions and Segregation in Flow

    Munn, Lance L.; Dupin, Michael M.

    2008-01-01

    For more than a century, pioneering researchers have been using novel experimental and computational approaches to probe the mysteries of blood flow. Thanks to their efforts, we know that blood cells generally prefer to migrate to the axis of flow, that red and white cells segregate in flow, and that cell deformability and their tendency to reversibly aggregate contribute to the non-Newtonian nature of this unique fluid. All of these properties have beneficial physiological consequences, allo...

  11. Chromosomal organization and segregation in Pseudomonas aeruginosa.

    Isabelle Vallet-Gely

    2013-05-01

    Full Text Available The study of chromosomal organization and segregation in a handful of bacteria has revealed surprising variety in the mechanisms mediating such fundamental processes. In this study, we further emphasized this diversity by revealing an original organization of the Pseudomonas aeruginosa chromosome. We analyzed the localization of 20 chromosomal markers and several components of the replication machinery in this important opportunistic γ-proteobacteria pathogen. This technique allowed us to show that the 6.3 Mb unique circular chromosome of P. aeruginosa is globally oriented from the old pole of the cell to the division plane/new pole along the oriC-dif axis. The replication machinery is positioned at mid-cell, and the chromosomal loci from oriC to dif are moved sequentially to mid-cell prior to replication. The two chromosomal copies are subsequently segregated at their final subcellular destination in the two halves of the cell. We identified two regions in which markers localize at similar positions, suggesting a bias in the distribution of chromosomal regions in the cell. The first region encompasses 1.4 Mb surrounding oriC, where loci are positioned around the 0.2/0.8 relative cell length upon segregation. The second region contains at least 800 kb surrounding dif, where loci show an extensive colocalization step following replication. We also showed that disrupting the ParABS system is very detrimental in P. aeruginosa. Possible mechanisms responsible for the coordinated chromosomal segregation process and for the presence of large distinctive regions are discussed.

  12. Wages, Promotions, and Gender Workplace Segregation (Japanese)

    HASHIMOTO Yuki; SATO Kaori

    2014-01-01

    In this paper, we examine how job assignments affect gender pay gap and the promotion rate of female workers using personnel records from a large Japanese manufacturing firm, where newly-hired male and female workers are systematically assigned to different workplaces ("gender job segregation"). According to our gender pay gap analysis, we find that controlling for workplace heterogeneity leads to a larger, rather than smaller, gender pay gap, implying that female workers are sorted into work...

  13. Wages, Promotions, and Gender Workplace Segregation

    橋本, 由紀; 佐藤, 香織

    2014-01-01

    In this paper, we examine how job assignments affect gender pay gap and the promotion rate of female workers using personnel records from a large Japanese manufacturing firm, where newly-hired male and female workers are systematically assigned to different workplaces ("gender job segregation"). According to our gender pay gap analysis, we find that controlling for workplace heterogeneity leads to a larger, rather than smaller, gender pay gap, implying that female workers are sorted into work...

  14. Self-organized Segregation on the Grid

    Omidvar, Hamed; Franceschetti, Massimo

    2018-02-01

    We consider an agent-based model with exponentially distributed waiting times in which two types of agents interact locally over a graph, and based on this interaction and on the value of a common intolerance threshold τ , decide whether to change their types. This is equivalent to a zero-temperature ising model with Glauber dynamics, an asynchronous cellular automaton with extended Moore neighborhoods, or a Schelling model of self-organized segregation in an open system, and has applications in the analysis of social and biological networks, and spin glasses systems. Some rigorous results were recently obtained in the theoretical computer science literature, and this work provides several extensions. We enlarge the intolerance interval leading to the expected formation of large segregated regions of agents of a single type from the known size ɛ >0 to size ≈ 0.134. Namely, we show that for 0.433sites can be observed within any sufficiently large region of the occupied percolation cluster. The exponential bounds that we provide also imply that complete segregation, where agents of a single type cover the whole grid, does not occur with high probability for p=1/2 and the range of intolerance considered.

  15. Integration and segregation in auditory scene analysis

    Sussman, Elyse S.

    2005-03-01

    Assessment of the neural correlates of auditory scene analysis, using an index of sound change detection that does not require the listener to attend to the sounds [a component of event-related brain potentials called the mismatch negativity (MMN)], has previously demonstrated that segregation processes can occur without attention focused on the sounds and that within-stream contextual factors influence how sound elements are integrated and represented in auditory memory. The current study investigated the relationship between the segregation and integration processes when they were called upon to function together. The pattern of MMN results showed that the integration of sound elements within a sound stream occurred after the segregation of sounds into independent streams and, further, that the individual streams were subject to contextual effects. These results are consistent with a view of auditory processing that suggests that the auditory scene is rapidly organized into distinct streams and the integration of sequential elements to perceptual units takes place on the already formed streams. This would allow for the flexibility required to identify changing within-stream sound patterns, needed to appreciate music or comprehend speech..

  16. Audiovisual segregation in cochlear implant users.

    Simon Landry

    Full Text Available It has traditionally been assumed that cochlear implant users de facto perform atypically in audiovisual tasks. However, a recent study that combined an auditory task with visual distractors suggests that only those cochlear implant users that are not proficient at recognizing speech sounds might show abnormal audiovisual interactions. The present study aims at reinforcing this notion by investigating the audiovisual segregation abilities of cochlear implant users in a visual task with auditory distractors. Speechreading was assessed in two groups of cochlear implant users (proficient and non-proficient at sound recognition, as well as in normal controls. A visual speech recognition task (i.e. speechreading was administered either in silence or in combination with three types of auditory distractors: i noise ii reverse speech sound and iii non-altered speech sound. Cochlear implant users proficient at speech recognition performed like normal controls in all conditions, whereas non-proficient users showed significantly different audiovisual segregation patterns in both speech conditions. These results confirm that normal-like audiovisual segregation is possible in highly skilled cochlear implant users and, consequently, that proficient and non-proficient CI users cannot be lumped into a single group. This important feature must be taken into account in further studies of audiovisual interactions in cochlear implant users.

  17. Purely temporal figure-ground segregation.

    Kandil, F I; Fahle, M

    2001-05-01

    Visual figure-ground segregation is achieved by exploiting differences in features such as luminance, colour, motion or presentation time between a figure and its surround. Here we determine the shortest delay times required for figure-ground segregation based on purely temporal features. Previous studies usually employed stimulus onset asynchronies between figure- and ground-containing possible artefacts based on apparent motion cues or on luminance differences. Our stimuli systematically avoid these artefacts by constantly showing 20 x 20 'colons' that flip by 90 degrees around their midpoints at constant time intervals. Colons constituting the background flip in-phase whereas those constituting the target flip with a phase delay. We tested the impact of frequency modulation and phase reduction on target detection. Younger subjects performed well above chance even at temporal delays as short as 13 ms, whilst older subjects required up to three times longer delays in some conditions. Figure-ground segregation can rely on purely temporal delays down to around 10 ms even in the absence of luminance and motion artefacts, indicating a temporal precision of cortical information processing almost an order of magnitude lower than the one required for some models of feature binding in the visual cortex [e.g. Singer, W. (1999), Curr. Opin. Neurobiol., 9, 189-194]. Hence, in our experiment, observers are unable to use temporal stimulus features with the precision required for these models.

  18. Minimization and segregation of radioactive wastes

    1992-07-01

    The report will serve as one of a series of technical manuals providing reference material and direct know-how to staff in radioisotope user establishments and research centres in Member States without nuclear power and the associated range of complex waste management operations. Considerations are limited to the minimization and segregation of wastes, these being initial steps on which the efficiency of the whole waste management system depends. The minimization and segregation operations are examined in the context of the restricted quantities and predominantly shorter lived activities of wastes from nuclear research, production and usage of radioisotopes. Liquid and solid wastes only are considered in the report. Gaseous waste minimization and treatment are specialized subjects and are not examined in this document. Gaseous effluent treatment in facilities handling low and intermediate level radioactive materials has been already the subject of a detailed IAEA report. Management of spent sealed sources has specifically been covered in a previous manual. Conditioned sealed sources must be taken into account in segregation arrangements for interim storage and disposal where there are exceptional long lived highly radiotoxic isotopes, particularly radium or americium. These are unlikely ever to be suitable for shallow land burial along with the remaining wastes. 30 refs, 5 figs, 8 tabs

  19. Implementing spatial segregation measures in R.

    Seong-Yun Hong

    Full Text Available Reliable and accurate estimation of residential segregation between population groups is important for understanding the extent of social cohesion and integration in our society. Although there have been considerable methodological advances in the measurement of segregation over the last several decades, the recently developed measures have not been widely used in the literature, in part due to their complex calculation. To address this problem, we have implemented several newly proposed segregation indices in R, an open source software environment for statistical computing and graphics, as a package called seg. Although there are already a few standalone applications and add-on packages that provide access to similar methods, our implementation has a number of advantages over the existing tools. First, our implementation is flexible in the sense that it provides detailed control over the calculation process with a wide range of input parameters. Most of the parameters have carefully chosen defaults, which perform acceptably in many situations, so less experienced users can also use the implemented functions without too much difficulty. Second, there is no need to export results to other software programs for further analysis. We provide coercion methods that enable the transformation of our output classes into general R classes, so the user can use thousands of standard and modern statistical techniques, which are already available in R, for the post-processing of the results. Third, our implementation does not require commercial software to operate, so it is accessible to a wider group of people.

  20. Ge-Au eutectic bonding of Ge (100) single crystals

    Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

    1993-01-01

    The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

  1. Segregation in handling processes of blended industrial coal

    Jones, M.G.; Marjanovic, P.; McGlinchy, D.; McLaren, R. [Glasgow Caledonian University, Glasgow (United Kingdom). Department of Physical Sciences, Centre for Industrial Bulk Solids Handling

    1998-09-01

    A comparison was made between two belt blending methods; using either a compartment hopper or feeder belts. The results indicated that in this case the system with feeder belts gave a more consistent proportioning of materials. Coal when formed into a heap was shown to segregate dependent on size fraction. The level of segregation for each size fraction was quantified using ANOVA statistics. Any measure taken to mitigate this segregation could then be properly assessed. Some aspects of the segregation evident in the heap arose in previous handling steps showing that such effects are transmittable along a process stream. Singles coal when pneumatically conveyed in dilute phase will segregate in the conveying pipeline. Segregation in the direction of travel was minimal in dense phase conveying although the materials tested separated through the depth of the pipe. A full scale experimental programme investigating segregation in both dense and dilute phase is currently underway. 7 refs., 2 figs., 4 tabs.

  2. Analysis of Minor Component Segregation in Ternary Powder Mixtures

    Asachi Maryam

    2017-01-01

    Full Text Available In many powder handling operations, inhomogeneity in powder mixtures caused by segregation could have significant adverse impact on the quality as well as economics of the production. Segregation of a minor component of a highly active substance could have serious deleterious effects, an example is the segregation of enzyme granules in detergent powders. In this study, the effects of particle properties and bulk cohesion on the segregation tendency of minor component are analysed. The minor component is made sticky while not adversely affecting the flowability of samples. The segregation extent is evaluated using image processing of the photographic records taken from the front face of the heap after the pouring process. The optimum average sieve cut size of components for which segregation could be reduced is reported. It is also shown that the extent of segregation is significantly reduced by applying a thin layer of liquid to the surfaces of minor component, promoting an ordered mixture.

  3. Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications

    Privitera, S. M. S.; Sousa, V.; Bongiorno, C.; Navarro, G.; Sabbione, C.; Carria, E.; Rimini, E.

    2018-04-01

    The atomic diffusion and compositional variations upon melting have been studied by transmission electron microscopy and electron energy loss spectroscopy in Ge rich GeSbTe films, with a composition optimized for memory applications. Melting and quenching has been achieved by laser pulses, in order to study pure thermal diffusion without electric field induced electromigration. The effect of different laser energy densities has been investigated. The diffusion of Ge atoms in the molten phase is found to be a prominent mechanism and, by employing finite elements computational analysis, a diffusion coefficient of Ge on the order of 5  ×  10-5 cm2 s-1 has been estimated.

  4. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  5. Racial Residential Segregation: Measuring Location Choice Attributes of Environmental Quality and Self-Segregation

    Zhaohua Zhang

    2018-04-01

    Full Text Available Both sorting on public goods and tastes for segregation contribute to the persistence of segregation in America. Incorporating Schelling’s (1969, 1971 concept of “neighborhood tipping” into a two-stage equilibrium sorting model, in which both neighborhood demographic composition and public goods (e.g., environmental quality affect households’ residential location choice, this study investigates how preferences for neighborhood demographic composition could obscure the role of exogenous public goods on segregation. The results reveal that non-white households face higher level of exposure to air pollution, suggesting the presence of environmental injustice in Franklin County, OH. Using a counterfactual scenario of switching off heterogeneous taste for environmental quality, this study identifies that sorting on Toxic Release Inventory (TRI emissions drives little correlations between emissions and demographics. However, when taste parameters of the interactions between neighborhood demographic composition and household race are eliminated, segregation (as measured by over-exposure to households of the same race of black and white households decreases by 7.63% and 16.36%, respectively, and own-race neighbor preferences contribute to segregation differently according to household income. These results may help explain some recent puzzles in the relationship between environmental quality and demographics.

  6. Si, Ge and SiGe wires for sensor application

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  7. Nonperipheral heavy ion collisions in the GeV/nucl. region

    Schopper, E.; Baumgardt, H.G.

    1978-01-01

    The paper resumes results of collisions of fast projectiles (He, C, O, Ne, Ar - nuclei) in the energy region of 0.2 GeV/nucl. to 4.2 GeV/nucl. with the target nuclei Ag and Br in AgCl-monocrystals, and up to 2.1 GeV/nucl. in nuclear emulsion; the events induced inside the detectors are observed in 4π-geometry. (orig./WL) [de

  8. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  9. Applications of Si/SiGe heterostructures to CMOS devices

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  10. Ex situ n+ doping of GeSn alloys via non-equilibrium processing

    Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

    2018-06-01

    Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

  11. Uniaxially stressed Ge:Ga and Ge:Be

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1992-12-01

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  12. Earnings of men and women in firms with a female dominated workforce : what drives the impact of sex segregation on wages?

    Heinze, Anja

    2009-01-01

    This study analyzes the relationship between the segregation of women across establishments and the salaries paid to men and women. My aim is to separate the impact the proportion of women working within an establishment has upon individual wages. For this purpose hypotheses are formulated as to what drives this impact: sex-specific preferences, lower qualifications among women or discrimination against women. To investigate this issue empirically, I use matched employer-employee data from Ge...

  13. Sound segregation via embedded repetition is robust to inattention.

    Masutomi, Keiko; Barascud, Nicolas; Kashino, Makio; McDermott, Josh H; Chait, Maria

    2016-03-01

    The segregation of sound sources from the mixture of sounds that enters the ear is a core capacity of human hearing, but the extent to which this process is dependent on attention remains unclear. This study investigated the effect of attention on the ability to segregate sounds via repetition. We utilized a dual task design in which stimuli to be segregated were presented along with stimuli for a "decoy" task that required continuous monitoring. The task to assess segregation presented a target sound 10 times in a row, each time concurrent with a different distractor sound. McDermott, Wrobleski, and Oxenham (2011) demonstrated that repetition causes the target sound to be segregated from the distractors. Segregation was queried by asking listeners whether a subsequent probe sound was identical to the target. A control task presented similar stimuli but probed discrimination without engaging segregation processes. We present results from 3 different decoy tasks: a visual multiple object tracking task, a rapid serial visual presentation (RSVP) digit encoding task, and a demanding auditory monitoring task. Load was manipulated by using high- and low-demand versions of each decoy task. The data provide converging evidence of a small effect of attention that is nonspecific, in that it affected the segregation and control tasks to a similar extent. In all cases, segregation performance remained high despite the presence of a concurrent, objectively demanding decoy task. The results suggest that repetition-based segregation is robust to inattention. (c) 2016 APA, all rights reserved).

  14. Continuum modelling of segregating tridisperse granular chute flow

    Deng, Zhekai; Umbanhowar, Paul B.; Ottino, Julio M.; Lueptow, Richard M.

    2018-03-01

    Segregation and mixing of size multidisperse granular materials remain challenging problems in many industrial applications. In this paper, we apply a continuum-based model that captures the effects of segregation, diffusion and advection for size tridisperse granular flow in quasi-two-dimensional chute flow. The model uses the kinematics of the flow and other physical parameters such as the diffusion coefficient and the percolation length scale, quantities that can be determined directly from experiment, simulation or theory and that are not arbitrarily adjustable. The predictions from the model are consistent with experimentally validated discrete element method (DEM) simulations over a wide range of flow conditions and particle sizes. The degree of segregation depends on the Péclet number, Pe, defined as the ratio of the segregation rate to the diffusion rate, the relative segregation strength κij between particle species i and j, and a characteristic length L, which is determined by the strength of segregation between smallest and largest particles. A parametric study of particle size, κij, Pe and L demonstrates how particle segregation patterns depend on the interplay of advection, segregation and diffusion. Finally, the segregation pattern is also affected by the velocity profile and the degree of basal slip at the chute surface. The model is applicable to different flow geometries, and should be easily adapted to segregation driven by other particle properties such as density and shape.

  15. Studying Angular Distribution of Neutron for (p,n) Reaction from 0.5 GeV to 1.5 GeV on some Heavy Targets 238U, 206Pb, 197Au, 186W

    Nguyen Mong Giao; Tran Thanh Dung; Nguyen Thi Ai Thu; Huynh Thi Xuan Tham

    2010-08-01

    The angular distributions of neutron are calculated for a spallation reaction induced by proton energy from 0.5 GeV to 1.5 GeV on target nuclei 206 Pb, 197 Au, 238 U, 186 W. In this report, we use nuclear data of JENDL-HE with evaluated proton induced cross-sections up to 3 GeV. The obtained results have been discussed in detail. (author)

  16. Growth and evolution of nickel germanide nanostructures on Ge(001).

    Grzela, T; Capellini, G; Koczorowski, W; Schubert, M A; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J; Schroeder, T

    2015-09-25

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer-Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous NixGey wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the NixGey terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular NixGey 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110).

  17. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

    Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

    2017-10-30

    We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

  18. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  19. Correlation between brain circuit segregation and obesity.

    Chao, Seh-Huang; Liao, Yin-To; Chen, Vincent Chin-Hung; Li, Cheng-Jui; McIntyre, Roger S; Lee, Yena; Weng, Jun-Cheng

    2018-01-30

    Obesity is a major public health problem. Herein, we aim to identify the correlation between brain circuit segregation and obesity using multimodal functional magnetic resonance imaging (fMRI) techniques and analysis. Twenty obese patients (BMI=37.66±5.07) and 30 healthy controls (BMI=22.64±3.45) were compared using neuroimaging and assessed for symptoms of anxiety and depression using the Hospital Anxiety and Depression Scale (HADS). All participants underwent resting-state fMRI (rs-fMRI) and T1-weighted imaging using a 1.5T MRI. Multimodal MRI techniques and analyses were used to assess obese patients, including the functional connectivity (FC), amplitude of low-frequency fluctuations (ALFF), regional homogeneity (ReHo), graph theoretical analysis (GTA), and voxel-based morphometry (VBM). Correlations between brain circuit segregation and obesity were also calculated. In the VBM, obese patients showed altered gray matter volumes in the amygdala, thalamus and putamen. In the FC, the obesity group showed increased functional connectivity in the bilateral anterior cingulate cortex and decreased functional connectivity in the frontal gyrus of default mode network. The obesity group also exhibited altered ALFF and ReHo in the prefrontal cortex and precuneus. In the GTA, the obese patients showed a significant decrease in local segregation and a significant increase in global integration, suggesting a shift toward randomization in their functional networks. Our results may provide additional evidence for potential structural and functional imaging markers for clinical diagnosis and future research, and they may improve our understanding of the underlying pathophysiology of obesity. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. <300> GeV team

    CERN PhotoLab

    1971-01-01

    The 300 GeV team had been assembled. In the photograph are Hans Horisberger, Clemens Zettler, Roy Billinge, Norman Blackburne, John Adams, Hans-Otto Wuster, Lars Persson, Bas de Raad, Hans Goebel, Simon Van der Meer.

  1. Separation of extrinsic and intrinsic plasmon excitations in Ge KLL Auger spectra

    Berenyi, Z.; Aszalos-Kiss, B.; Csik, A.; Toth, J.; Koever, L.; Varga, D.

    2002-01-01

    The nature of the Ge satellite structure and the contributions from extrinsic and intrinsic processes were investigated using the ESA-31 electron spectrometer. These measurements are providing the first high energy resolution Ge KLL data. The intensity ratio of the plasmon peaks induced by intrinsic and extrinsic excitation processes is found. (R.P.)

  2. Dynamics of chromosome segregation in Escherichia coli

    Nielsen, Henrik Jørck

    2007-01-01

    Since the 1960’es the conformation and segregation of the chromosome in Escherichia coli has been a subject of interest for many scientists. However, after 40 years of research, we still know incredibly little about how the chromosome is organized inside the cell, how it manages to duplicate...... this incredibly big molecule and separate the two daughter chromosomes and how it makes sure that the daughter cells receives one copy each. The fully extended chromosome is two orders of magnitude larger than the cell in which it is contained. Hence the chromosome is heavily compacted in the cell...

  3. Grain size segregation in debris discs

    Thebault, P.; Kral, Q.; Augereau, J.-C.

    2014-01-01

    Context. In most debris discs, dust grain dynamics is strongly affected by stellar radiation pressure. Because this mechanism is size-dependent, we expect dust grains to be spatially segregated according to their sizes. However, because of the complex interplay between radiation pressure, grain processing by collisions, and dynamical perturbations, this spatial segregation of the particle size distribution (PSD) has proven difficult to investigate and quantify with numerical models. Aims: We propose to thoroughly investigate this problem by using a new-generation code that can handle some of the complex coupling between dynamical and collisional effects. We intend to explore how PSDs behave in both unperturbed discs at rest and in discs pertubed by planetary objects. Methods: We used the DyCoSS code to investigate the coupled effect of collisions, radiation pressure, and dynamical perturbations in systems that have reached a steady-state. We considered two setups: a narrow ring perturbed by an exterior planet, and an extended disc into which a planet is embedded. For both setups we considered an additional unperturbed case without a planet. We also investigated the effect of possible spatial size segregation on disc images at different wavelengths. Results: We find that PSDs are always spatially segregated. The only case for which the PSD follows a standard dn ∝ s-3.5ds law is for an unperturbed narrow ring, but only within the parent-body ring itself. For all other configurations, the size distributions can strongly depart from such power laws and have steep spatial gradients. As an example, the geometrical cross-section of the disc is very rarely dominated by the smallest grains on bound orbits, as it is expected to be in standard PSDs in sq with q ≤ -3. Although the exact profiles and spatial variations of PSDs are a complex function of the set-up that is considered, we are still able to derive some reliable results that will be useful for image or SED

  4. Cost segregation of assets offers tax benefits.

    Grant, D A

    2001-04-01

    A cost-segregation study is an asset-reclassification strategy that accelerates tax-depreciation deductions. By using this strategy, healthcare facility owners can lower their current income-tax liability and increase current cash flow. Simply put, certain real estate is reclassified from long-lived real property to shorter-lived personal property for depreciation purposes. Depreciation deductions for the personal property then can be greatly accelerated, thereby producing greater present-value tax savings. An analysis of costs can be conducted from either detailed construction records, when such records are available, or by using qualified appraisers, architects, or engineers to perform the allocation analysis.

  5. Segregation 2.0: The New Generation of School Segregation in the 21st Century

    Thompson Dorsey, Dana N.

    2013-01-01

    Students are more racially segregated in schools today than they were in the late 1960s and prior to the enforcement of court-ordered desegregation in school districts across the country. This special issue addresses the overarching theme of policies, practices, or roles and responsibilities of various stakeholders that may directly or indirectly…

  6. The 76Ge(n,p)76Ga reaction and its relevance to searches for the neutrino-less double-beta decay of 76Ge

    Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan, Fnu

    2015-10-01

    The 76Ge(n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.9 keV state of 76Ge, which decays by emission of a 2040.7 keV γ ray. Using HPGe detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrino-less double-beta decay of 76Ge with its Q-value of 2039.0 keV. In the neutron energy range between 10 and 20 MeV the production cross section of the 2040.7 keV γ ray is approximately 0.1 mb. In the same experiment γ rays of energy 2037.9 keV resulting from the 76Ge(n, γ)77Ge reaction were clearly observed. Adding the 76Ge(n,n' γ)76Ge reaction, which also produces the 2040.7 keV γ ray with a cross section value of the order of 0.1 mb clearly shows that great care has to be taken to eliminate neutron-induced backgrounds in searches for neutrino-less double-beta decay of 76Ge. This work was supported by the U.S. DOE under Grant NO. DE-FG02-97ER41033.

  7. Surface segregation in binary alloy first wall candidate materials

    Gruen, D.M.; Krauss, A.R.; Mendelsohn, M.H.; Susman, S.; Argonne National Lab., IL

    1982-01-01

    We have been studying the conditions necessary to produce a self-sustaining stable lithium monolayer on a metal substrate as a means of creating a low-Z film which sputters primarily as secondary ions. It is expected that because of the toroidal field, secondary ions originating at the first wall will be returned and contribute little to the plasma impurity influx. Aluminum and copper have, because of their high thermal conductivity and low induced radioactivity, been proposed as first wall candidate materials. The mechanical properties of the pure metals are very poorly suited to structural applications and an alloy must be used to obtain adequate hardness and tensile strength. In the case of aluminum, mechanical properties suitable for aircraft manufacture are obtained by the addition of a few at% Li. In order to investigate alloys of a similar nature as candidate structural materials for fusion machines we have prepared samples of Li-doped aluminum using both a pyro-metallurgical and a vapor-diffusion technique. The sputtering properties and surface composition have been studied as a function of sample temperature and heating time, and ion beam mass. The erosion rate and secondary ion yield of both the sputtered Al and Li have been monitored by secondary ion mass spectroscopy and Auger analysis providing information on surface segregation, depth composition profiles, and diffusion rates. The surface composition ahd lithium depth profiles are compared with previously obtained computational results based on a regular solution model of segregation, while the partial sputtering yields of Al and Li are compared with results obtained with a modified version of the TRIM computer program. (orig.)

  8. The selfish Segregation Distorter gene complex of Drosophila melanogaster.

    Larracuente, Amanda M; Presgraves, Daven C

    2012-09-01

    Segregation Distorter (SD) is an autosomal meiotic drive gene complex found worldwide in natural populations of Drosophila melanogaster. During spermatogenesis, SD induces dysfunction of SD(+) spermatids so that SD/SD(+) males sire almost exclusively SD-bearing progeny rather than the expected 1:1 Mendelian ratio. SD is thus evolutionarily "selfish," enhancing its own transmission at the expense of its bearers. Here we review the molecular and evolutionary genetics of SD. Genetic analyses show that the SD is a multilocus gene complex involving two key loci--the driver, Segregation distorter (Sd), and the target of drive, Responder (Rsp)--and at least three upward modifiers of distortion. Molecular analyses show that Sd encodes a truncated duplication of the gene RanGAP, whereas Rsp is a large pericentromeric block of satellite DNA. The Sd-RanGAP protein is enzymatically wild type but mislocalized within cells and, for reasons that remain unclear, appears to disrupt the histone-to-protamine transition in drive-sensitive spermatids bearing many Rsp satellite repeats but not drive-insensitive spermatids bearing few or no Rsp satellite repeats. Evolutionary analyses show that the Sd-RanGAP duplication arose recently within the D. melanogaster lineage, exploiting the preexisting and considerably older Rsp satellite locus. Once established, the SD haplotype collected enhancers of distortion and suppressors of recombination. Further dissection of the molecular genetic and cellular basis of SD-mediated distortion seems likely to provide insights into several important areas currently understudied, including the genetic control of spermatogenesis, the maintenance and evolution of satellite DNAs, the possible roles of small interfering RNAs in the germline, and the molecular population genetics of the interaction of genetic linkage and natural selection.

  9. Growth Conditions Regulate the Requirements for Caulobacter Chromosome Segregation

    Shebelut, Conrad W.; Jensen, Rasmus Bugge; Gitai, Zemer

    2009-01-01

    Growth environments are important metabolic and developmental regulators. Here we demonstrate a growth environment-dependent effect on Caulobacter chromosome segregation of a small-molecule inhibitor of the MreB bacterial actin cytoskeleton. Our results also implicate ParAB as important segregation...... determinants, suggesting that multiple distinct mechanisms can mediate Caulobacter chromosome segregation and that their relative contributions can be environmentally regulated....

  10. High-field magnetization of UCuGe single crystal

    Andreev, Alexander V.; Mushnikov, N. V.; Gozo, T.; Honda, F.; Sechovský, V.; Prokeš, K.

    346-347, - (2004), s. 132-136 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : uranium intermetallics * UCuGe * high fields * magnetic anisotropy * field-induced phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.679, year: 2004

  11. Segregation-mobility feedback for bidisperse shallow granular flows: Towards understanding segregation in geophysical flows

    Thornton, A.; Denissen, I.; Weinhart, T.; Van der Vaart, K.

    2017-12-01

    The flow behaviour of shallow granular chute flows for uniform particles is well-described by the hstop-rheology [1]. Geophysical flows, however, are often composed of highly non-uniform particles that differ in particle (size, shape, composition) or contact (friction, dissipation, cohesion) properties. The flow behaviour of such mixtures can be strongly influenced by particle segregation effects. Here, we study the influence of particle size-segregation on the flow behaviour of bidisperse flows using experiments and the discrete particle method. We use periodic DPM to derive hstop-rheology for the bi-dispersed granular shallow layer equations, and study their dependence on the segregation profile. In the periodic box simulations, size-segregation results in an upward coarsening of the size distribution with the largest grains collecting at the top of the flow. In geophysical flows, the fact the flow velocity is greatest at the top couples with the vertical segregation to preferentially transported large particles to the front. The large grains may be overrun, resegregated towards the surface and recirculated before being shouldered aside into lateral levees. Theoretically it has been suggested this process should lead to a breaking size-segregation (BSS) wave located between a large-particle-rich front and a small-particle-rich tail [2,3]. In the BSS wave large particles that have been overrun rise up again to the free-surface while small particles sink to the bed. We present evidence for the existences of the BSS wave. This is achieved through the study of three-dimensional bidisperse granular flows in a moving-bed channel. Our analysis demonstrates a relation between the concentration of small particles in the flow and the amount of basal slip, in which the structure of the BSS wave plays a key role. This leads to a feedback between the mean bulk flow velocity and the process of size-segregation. Ultimately, these findings shed new light on the recirculation of

  12. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  13. Decentralization as a Cause of Spatial Segregation

    Jasarovic Ema Alihodzic

    2016-01-01

    Full Text Available City represents an incomplete dynamic process prone to the expansion with a causal link between urban expansion and socio-spatial segregation. The socio-spatial distribution in the city is mostly related to the increased social polarization and inequality. There is a clear connection between divided society and divided city: if society is divided, urban space must be divided. It is the question of the relations between the social inequalities on one hand, and spatial segregation on the other. In the last 10 years, Podgorica is the city that shows alarming statistic values when it comes to demographic trends and the influx of the residents from the northern municipalities, which necessarily causes the city sprawl. Past experiences show that city is unevenly expanding, creating new functions and zones expressed by socio-spatial differences. The beginning of this process lies in modernist conception of the city, by which city was mostly developed, while the current functional organization is based on the same concept. With the first urban plans, which carried similarproblems mentioned in previous section, Podgorica was divided into three clearly differentiated zones: Stara Varoš, Nova Varoš and Novi grad, which became a platform for hierarchical divisions within the space, reflecting them in the society.

  14. Binaural segregation in multisource reverberant environments.

    Roman, Nicoleta; Srinivasan, Soundararajan; Wang, DeLiang

    2006-12-01

    In a natural environment, speech signals are degraded by both reverberation and concurrent noise sources. While human listening is robust under these conditions using only two ears, current two-microphone algorithms perform poorly. The psychological process of figure-ground segregation suggests that the target signal is perceived as a foreground while the remaining stimuli are perceived as a background. Accordingly, the goal is to estimate an ideal time-frequency (T-F) binary mask, which selects the target if it is stronger than the interference in a local T-F unit. In this paper, a binaural segregation system that extracts the reverberant target signal from multisource reverberant mixtures by utilizing only the location information of target source is proposed. The proposed system combines target cancellation through adaptive filtering and a binary decision rule to estimate the ideal T-F binary mask. The main observation in this work is that the target attenuation in a T-F unit resulting from adaptive filtering is correlated with the relative strength of target to mixture. A comprehensive evaluation shows that the proposed system results in large SNR gains. In addition, comparisons using SNR as well as automatic speech recognition measures show that this system outperforms standard two-microphone beamforming approaches and a recent binaural processor.

  15. Sound source localization and segregation with internally coupled ears

    Bee, Mark A; Christensen-Dalsgaard, Jakob

    2016-01-01

    to their correct sources (sound source segregation). Here, we review anatomical, biophysical, neurophysiological, and behavioral studies aimed at identifying how the internally coupled ears of frogs contribute to sound source localization and segregation. Our review focuses on treefrogs in the genus Hyla......, as they are the most thoroughly studied frogs in terms of sound source localization and segregation. They also represent promising model systems for future work aimed at understanding better how internally coupled ears contribute to sound source localization and segregation. We conclude our review by enumerating...

  16. Dysfunctional MreB inhibits chromosome segregation in Escherichia coli

    Kruse, Thomas; Møller-Jensen, Jakob; Løbner-Olesen, Anders

    2003-01-01

    The mechanism of prokaryotic chromosome segregation is not known. MreB, an actin homolog, is a shape-determining factor in rod-shaped prokaryotic cells. Using immunofluorescence microscopy we found that MreB of Escherichia coli formed helical filaments located beneath the cell surface. Flow...... cytometric and cytological analyses indicated that MreB-depleted cells segregated their chromosomes in pairs, consistent with chromosome cohesion. Overexpression of wild-type MreB inhibited cell division but did not perturb chromosome segregation. Overexpression of mutant forms of MreB inhibited cell...... that MreB filaments participate in directional chromosome movement and segregation....

  17. Chromosome and cell wall segregation in Streptococcus faecium ATCC 9790

    Higgins, M.L.; Glaser, D.; Dicker, D.T.; Zito, E.T.

    1989-01-01

    Segregation was studied by measuring the positions of autoradiographic grain clusters in chains formed from single cells containing on average less than one radiolabeled chromosome strand. The degree to which chromosomal and cell wall material cosegregated was quantified by using the methods of S. Cooper and M. Weinberger, dividing the number of chains labeled at the middle. This analysis indicated that in contrast to chromosomal segregation in Escherichia coli and, in some studies, to that in gram-positive rods, chromosomal segregation in Streptococcus faecium was slightly nonrandom and did not vary with growth rate. Results were not significantly affected by strand exchange. In contrast, labeled cell wall segregated predominantly nonrandomly

  18. Oxygen transport and GeO2 stability during thermal oxidation of Ge

    da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

    2012-05-01

    Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

  19. Probing the stability of Al 2O 3/Ge structures with ion beams

    Bom, N. M.; Soares, G. V.; Krug, C.; Baumvol, I. J. R.; Radtke, C.

    2012-02-01

    Al 2O 3 films were deposited on Ge substrates by reactive sputtering. Resulting samples were submitted to different post-deposition annealings (PDAs) in order to probe composition modifications induced by such treatments. Nuclear reaction profiling (NRP) revealed that O incorporation depends on PDA temperature and on the employed atmosphere (water or oxygen). We also found that O from the gas phase strongly interacts with the Ge semiconductor substrate when PDA is performed with water at 500 °C. Ion scattering analyses evidenced an increase of Ge concentration throughout the Al 2O 3 dielectric layer and on the sample surface associated with the oxidation of the Ge substrate. These findings are explained by GeO desorption resulting from chemical reactions occurring at the dielectric/Ge interface.

  20. Analysis of Strain and Intermixing in a Single Layer Ge/Si dots using polarized Raman Spectroscopy

    PEROVA, TANIA; MOORE, ROBERT

    2006-01-01

    PUBLISHED The built-in strain and composition of as-grown and Si-capped single layers of Ge?Si dots grown at various temperatures (460?800 ?C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700?800...

  1. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  2. Radiation resistance of GeO2-doped silica core optical fibers

    Shibata, Shuichi; Nakahara, Motohiro; Omori, Yasuharu

    1985-01-01

    Effects of hlogen addition to silica glass on the loss in optical fibers are examined by using halogen-free, chlorine-containing and fluorine-containing GeO 2 -doped silica core optical fibers. Measurements are made for dependence of induced loss in these optical fibers on various factors such as wavelength and total dose of gamma radiation as well as GeO 2 content. Ultraviolet absorption spectra are also observed. In addition, effects of halogens added to pure silica fibers are considered on the basis of Raman spectra of three different optical fibers (pure, F-doped, and F- and GeO 2 -codoped silica core). Thus, it is concluded that (1) addition of halogens (F and Cl) serves to decrease GeO defects and Ge(3) defects in GeO 2 -doped silica optical fibers ; (2) addition of halogens suppresses the increase in loss in GeO 2 -doped silica optical fibers induced by gamma radiation ; and (3) there are close relations between the increase in loss induced by gamma radiation and defects originally existing in the fibers. Effects of halogens added to GeO 2 -doped and pure silica optical fibers can be explained on the basis of the latter relations. (Nogami, K.)

  3. Magnetoelastic behaviour of Gd sub 5 Ge sub 4

    Magen, C; Algarabel, P A; Marquina, C; Ibarra, M R

    2003-01-01

    A complete investigation of the complex magnetic behaviour of Gd sub 5 Ge sub 4 by means of linear thermal expansion and magnetostriction measurements (5-300 K, 0-120 kOe) has been carried out. Our results support the suggested existence in this system of a coupled crystallographic-magnetic transition from a Gd sub 5 Ge sub 4 -type Pnma (antiferromagnetic) to a Gd sub 5 Si sub 4 -type Pnma (ferromagnetic) state. Strong magnetoelastic effects are observed at the field-induced first-order magnetic-martensitic transformation. A revised magnetic and crystallographic H- T phase diagram is proposed.

  4. Heavy Ion Current Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  5. Micro and Macro Segregation in Alloys Solidifying with Equiaxed Morphology

    Stefanescu, Doru M.; Curreri, Peter A.; Leon-Torres, Jose; Sen, Subhayu

    1996-01-01

    To understand macro segregation formation in Al-Cu alloys, experiments were run under terrestrial gravity (1g) and under low gravity during parabolic flights (10(exp -2) g). Alloys of two different compositions (2% and 5% Cu) were solidified at two different cooling rates. Systematic microscopic and SEM observations produced microstructural and segregation maps for all samples. These maps may be used as benchmark experiments for validation of microstructure evolution and segregation models. As expected, the macro segregation maps are very complex. When segregation was measured along the central axis of the sample, the highest macro segregation for samples solidified at 1g was obtained for the lowest cooling rate. This behavior is attributed to the longer time available for natural convection and shrinkage flow to affect solute redistribution. In samples solidified under low-g, the highest macro-segregation was obtained at the highest cooling rate. In general, low-gravity solidification resulted in less segregation. To explain the experimental findings, an analytical (Flemings-Nereo) and a numerical model were used. For the numerical model, the continuum formulation was employed to describe the macroscopic transports of mass, energy, and momentum, associated with the microscopic transport phenomena, for a two-phase system. The model proposed considers that liquid flow is driven by thermal and solutal buoyancy, and by solidification shrinkage. The Flemings-Nereo model explains well macro segregation in the initial stages of low-gravity segregation. The numerical model can describe the complex macro segregation pattern and the differences between low- and high-gravity solidification.

  6. Auditory stream segregation using amplitude modulated bandpass noise

    Yingjiu eNie

    2015-08-01

    Full Text Available The purpose of this study was to investigate the roles of spectral overlap and amplitude modulation (AM rate for stream segregation for noise signals, as well as to test the build-up effect based on these two cues. Segregation ability was evaluated using an objective paradigm with listeners’ attention focused on stream segregation. Stimulus sequences consisted of two interleaved sets of bandpass noise bursts (A and B bursts. The A and B bursts differed in spectrum, AM-rate, or both. The amount of the difference between the two sets of noise bursts was varied. Long and short sequences were studied to investigate the build-up effect for segregation based on spectral and AM-rate differences. Results showed the following: 1. Stream segregation ability increased with greater spectral separation. 2. Larger AM-rate separations were associated with stronger segregation abilities. 3. Spectral separation was found to elicit the build-up effect for the range of spectral differences assessed in the current study. 4. AM-rate separation interacted with spectral separation suggesting an additive effect of spectral separation and AM-rate separation on segregation build-up. The findings suggest that, when normal-hearing listeners direct their attention toward segregation, they are able to segregate auditory streams based on reduced spectral contrast cues that vary by the amount of spectral overlap. Further, regardless of the spectral separation they were able to use AM-rate difference as a secondary/weaker cue. Based on the spectral differences, listeners can segregate auditory streams better as the listening duration is prolonged—i.e. sparse spectral cues elicit build-up segregation; however, AM-rate differences only appear to elicit build-up when in combination with spectral difference cues.

  7. Segregation of antimony in InP in MOVPE

    Weeke, Stefan

    2008-07-01

    saturates at 580 C due to desorption. SIMS measurements show, that the Sb content at the interface in independent of temperature, while the Sb content of the 2nd layer decreases linearly with increasing temperature. The Sb content of the 2nd layer depends only on the temperature, but not on Sb partial pressure. The systematic investigation of strained InPSb/InP superlattices shows, that only a small amount of the initially deposited Sb on the surface is incorporated into the InPSb layers. The main fraction of the Sb segregates into the InP barriers. A linear segregation model shows that the segregation coefficient of Sb is close to one. The formation of the double quantumwell is explained by a model of strain induced surface melting. During treatment with antimony a Sb rich quasi liquid surface melt is formed. By Sb exchange with P and desorption the Sb content of the layer is reduced, until it solidifies. (orig.)

  8. Segregation of antimony in InP in MOVPE

    Weeke, Stefan

    2008-01-01

    saturates at 580 C due to desorption. SIMS measurements show, that the Sb content at the interface in independent of temperature, while the Sb content of the 2nd layer decreases linearly with increasing temperature. The Sb content of the 2nd layer depends only on the temperature, but not on Sb partial pressure. The systematic investigation of strained InPSb/InP superlattices shows, that only a small amount of the initially deposited Sb on the surface is incorporated into the InPSb layers. The main fraction of the Sb segregates into the InP barriers. A linear segregation model shows that the segregation coefficient of Sb is close to one. The formation of the double quantumwell is explained by a model of strain induced surface melting. During treatment with antimony a Sb rich quasi liquid surface melt is formed. By Sb exchange with P and desorption the Sb content of the layer is reduced, until it solidifies. (orig.)

  9. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  10. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  11. Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

    Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Sato, Shigeo

    2014-01-01

    By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si 1−x Ge x alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si 1−x Ge x alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si 1−x Ge x thin film is in good agreement with the normalized GeH 4 partial pressure. The Si 1−x Ge x deposition rate increases with an increase of GeH 4 partial pressure. The GeH 4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si 1−x Ge x thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors. - Highlights: • Si 1−x Ge x alloy and Ge were epitaxially grown on Si(100) without substrate heating. • Large strain and its relaxation behavior can be observed by X-ray diffraction. • Ge fraction of Si 1−x Ge x is equal to normalized GeH 4 partial pressure. • Si partial deposition rate is slightly enhanced by existence of Ge

  12. Si0.85Ge0.15 oxynitridation in nitric oxide/nitrous oxide ambient

    Dasgupta, Anindya; Takoudis, Christos G.; Lei Yuanyuan; Browning, Nigel D.

    2003-01-01

    Low temperature, nitric oxide (NO)/nitrous oxide (N 2 O) aided, sub-35 Aa Si 0.85 Ge 0.15 oxynitrides have been grown at 550 and 650 deg. C, while the oxynitridation feed gases have been preheated to 900 and 1000 deg. C, respectively, before entering the reaction zone. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy (SIMS) data suggest that NO-assisted oxynitridation incorporates more nitrogen than the N 2 O-assisted one, while there is minimal Ge segregation towards the dielectric/substrate interface in both oxynitridation processes. Moreover, SIMS results suggest that nitrogen is distributed throughout the film in contrast to high temperature Si oxynitridation, where nitrogen incorporation takes place near the dielectric/substrate interface. Z-contrast imaging with scanning transmission electron microscopy shows that the oxynitride grown in NO at 650 degree sign C has a sharp interface with the bulk Si 0.85 Ge 0.15 , while the roughness of the dielectric/Si 0.85 Ge 0.15 substrate interface is less than 2 Aa. These results are discussed in the context of an overall mechanism of SiGe oxynitridation

  13. Formation of the low-resistivity compound Cu_3Ge by low-temperature treatment in an atomic hydrogen flux

    Erofeev, E. V.; Kazimirov, A. I.; Fedin, I. V.; Kagadei, V. A.

    2016-01-01

    The systematic features of the formation of the low-resistivity compound Cu_3Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatment of the Cu/Ge/i-GaAs system, in which the layer thicknesses are, correspondingly, 122 and 78 nm, in atomic hydrogen with a flux density of 10"1"5 at cm"2 s"–"1 for 2.5–10 min at room temperature induces the interdiffusion of Cu and Ge, with the formation of a polycrystalline film containing the stoichiometric Cu_3Ge phase. The film consists of vertically oriented grains 100–150 nm in size and exhibits a minimum resistivity of 4.5 µΩ cm. Variations in the time of treatment of the Cu/Ge/i-GaAs samples in atomic hydrogen affect the Cu and Ge depth distribution, the phase composition of the films, and their resistivity. Experimental observation of the synthesis of the Cu_3Ge compound at room temperature suggests that treatment in atomic hydrogen has a stimulating effect on both the diffusion of Cu and Ge and the chemical reaction of Cu_3Ge-compound formation. These processes can be activated by the energy released upon the recombination of hydrogen atoms adsorbed at the surface of the Cu/Ge/i-GaAs sample.

  14. Segregation and differential settling in flocculated tailings

    Farinato, R.S.; Mahmoudkhani, A.; Fenderson, T.; Watson, P. [Kemira, Atlanta, GA (United States)

    2010-07-01

    Untreated oil sands tailings have a high solids content, have poor dewaterability, and contain no aggregates. This PowerPoint presentation investigated segregation and differential settling in flocculated tailings. Tailings were treated with gypsum and various polymers. Cylinder settling, dynamic rheometry, particle size analysis, and microscopy techniques were used to characterize the composite tailings. The particles sizes of the samples were evaluated in relation to shear rate, bed depth, and treatment. The study showed that the gypsum-treated tailings had small aggregates, size stratification, a high solids content, and poor dewaterability. The polymer N-treated tailings had the lowest solids content, good dewaterability, and weak aggregates. The polymer A-treated tailings had a low solids content, very good dewaterability, and strong aggregates. The addition of a coagulant to the polymer-A treated tailings provided weaker aggregates and a higher solids content. tabs., figs.

  15. Blood cell interactions and segregation in flow.

    Munn, Lance L; Dupin, Michael M

    2008-04-01

    For more than a century, pioneering researchers have been using novel experimental and computational approaches to probe the mysteries of blood flow. Thanks to their efforts, we know that blood cells generally prefer to migrate to the axis of flow, that red and white cells segregate in flow, and that cell deformability and their tendency to reversibly aggregate contribute to the non-Newtonian nature of this unique fluid. All of these properties have beneficial physiological consequences, allowing blood to perform a variety of critical functions. Our current understanding of these unusual flow properties of blood have been made possible by the ingenuity and diligence of a number of researchers, including Harry Goldsmith, who developed novel technologies to visualize and quantify the flow of blood at the level of individual cells. Here we summarize efforts in our lab to continue this tradition and to further our understanding of how blood cells interact with each other and with the blood vessel wall.

  16. Heider balance, asymmetric ties, and gender segregation

    Krawczyk, Małgorzata J.; del Castillo-Mussot, Marcelo; Hernández-Ramírez, Eric; Naumis, Gerardo G.; Kułakowski, Krzysztof

    2015-12-01

    To remove a cognitive dissonance in interpersonal relations, people tend to divide their acquaintances into friendly and hostile parts, both groups internally friendly and mutually hostile. This process is modeled as an evolution toward the Heider balance. A set of differential equations have been proposed and validated (Kułakowski et al., 2005) to model the Heider dynamics of this social and psychological process. Here we generalize the model by including the initial asymmetry of the interpersonal relations and the direct reciprocity effect which removes this asymmetry. Our model is applied to the data on enmity and friendship in 37 school classes and 4 groups of teachers in México. For each class, a stable balanced partition is obtained into two groups. The gender structure of the groups reveals stronger gender segregation in younger classes, i.e. of age below 12 years, a fact consistent with other general empirical results.

  17. Centromeric heterochromatin: the primordial segregation machine.

    Bloom, Kerry S

    2014-01-01

    Centromeres are specialized domains of heterochromatin that provide the foundation for the kinetochore. Centromeric heterochromatin is characterized by specific histone modifications, a centromere-specific histone H3 variant (CENP-A), and the enrichment of cohesin, condensin, and topoisomerase II. Centromere DNA varies orders of magnitude in size from 125 bp (budding yeast) to several megabases (human). In metaphase, sister kinetochores on the surface of replicated chromosomes face away from each other, where they establish microtubule attachment and bi-orientation. Despite the disparity in centromere size, the distance between separated sister kinetochores is remarkably conserved (approximately 1 μm) throughout phylogeny. The centromere functions as a molecular spring that resists microtubule-based extensional forces in mitosis. This review explores the physical properties of DNA in order to understand how the molecular spring is built and how it contributes to the fidelity of chromosome segregation.

  18. Figure-ground segregation in a recurrent network architecture

    Lamme, V.A.F.; Roelfsema, P.R.; Spekreijse, H.; Bosch, H.

    2002-01-01

    Proposes a model of how the visual brain segregate textured scenes into figures and background. During texture segregation, locations where the properties of texture elements change abruptly are assigned to boundaries, whereas image regions that are relatively homogeneous are grouped together

  19. Figure-ground segregation in a recurrent network architecture

    Roelfsema, Pieter R.; Lamme, Victor A. F.; Spekreijse, Henk; Bosch, Holger

    2002-01-01

    Here we propose a model of how the visual brain segregates textured scenes into figures and background. During texture segregation, locations where the properties of texture elements change abruptly are assigned to boundaries, whereas image regions that are relatively homogeneous are grouped

  20. Seeing Race: Teaching Residential Segregation with the Racial Dot Map

    Seguin, Charles; Nierobisz, Annette; Kozlowski, Karen Phelan

    2017-01-01

    Students commonly hold erroneous notions of a "post-racial" world and individualistic worldviews that discount the role of structure in social outcomes. Jointly, these two preconceived beliefs can be powerful barriers to effective teaching of racial segregation: Students may be skeptical that racial segregation continues to exist, and…

  1. "Brown" at 62: School Segregation by Race, Poverty and State

    Orfield, Gary; Ee, Jongyeon; Frankenberg, Erica; Siegel-Hawley, Genevieve

    2016-01-01

    As the anniversary of "Brown v. Board of Education" decision arrives again without any major initiatives to mitigate spreading and deepening segregation in the nation's schools, the Civil Rights Project adds to a growing national discussion with a research brief drawn from a much broader study of school segregation to be published in…

  2. A new principle of figure-ground segregation : The accentuation

    Pinna, Baingio; Reeves, Adam; Koenderink, Jan; van Doorn, Andrea; Deiana, Katia

    2018-01-01

    The problem of perceptual organization was studied by Gestalt psychologists in terms of figure-ground segregation. In this paper we explore a new principle of figure-ground segregation: accentuation. We demonstrate the effectiveness of accentuation relative to other Gestalt principles, and also

  3. The Emergence of Gender Segregation in Toddler Playgroups.

    Serbin, Lisa A.; And Others

    1994-01-01

    A naturalistic study of toddler playgroups examined factors that might encourage gender segregation. Results revealed that play in same-sex contexts facilitates social interaction, whereas in mixed-sex contexts, play leads to passive social relations. Toddlers who segregated were more behaviorally sex-typed. Preferences for sex-typed toys did not…

  4. Asymmetric strand segregation: epigenetic costs of genetic fidelity?

    Diane P Genereux

    2009-06-01

    Full Text Available Asymmetric strand segregation has been proposed as a mechanism to minimize effective mutation rates in epithelial tissues. Under asymmetric strand segregation, the double-stranded molecule that contains the oldest DNA strand is preferentially targeted to the somatic stem cell after each round of DNA replication. This oldest DNA strand is expected to have fewer errors than younger strands because some of the errors that arise on daughter strands during their synthesis fail to be repaired. Empirical findings suggest the possibility of asymmetric strand segregation in a subset of mammalian cell lineages, indicating that it may indeed function to increase genetic fidelity. However, the implications of asymmetric strand segregation for the fidelity of epigenetic information remain unexplored. Here, I explore the impact of strand-segregation dynamics on epigenetic fidelity using a mathematical-modelling approach that draws on the known molecular mechanisms of DNA methylation and existing rate estimates from empirical methylation data. I find that, for a wide range of starting methylation densities, asymmetric -- but not symmetric -- strand segregation leads to systematic increases in methylation levels if parent strands are subject to de novo methylation events. I found that epigenetic fidelity can be compromised when enhanced genetic fidelity is achieved through asymmetric strand segregation. Strand segregation dynamics could thus explain the increased DNA methylation densities that are observed in structured cellular populations during aging and in disease.

  5. Standardized Testing and School Segregation: Like Tinder for Fire?

    Knoester, Matthew; Au, Wayne

    2017-01-01

    Recent research suggests that high-stakes standardized testing has played a negative role in the segregation of children by race and class in schools. In this article we review research on the overall effects of segregation, the positive and negative aspects of how desegregation plans were carried out following the 1954 Supreme Court decision…

  6. 7 CFR 58.332 - Segregation of raw material.

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Segregation of raw material. 58.332 Section 58.332... Specifications for Dairy Plants Approved for USDA Inspection and Grading Service 1 Operations and Operating Procedures § 58.332 Segregation of raw material. The milk and cream received at the dairy plant shall meet...

  7. Evidence of preferential diffusion and segregation of impurities at grain boundaries in very pure niobium used for radiofrequency cavities

    Antoine, C.; Bonin, B.; Safa, H.; Berthier, B.; Tessier, E.; Trocelier, P.; Chevarier, A.; Chevarier, N.; Roux, B.

    1996-04-01

    In order to overcome dissipation due to impurity segregation at grain boundary, niobium cavities are submitted to a purification annealing (1300 deg C ± 200 deg C under vacuum) during which titanium is evaporated onto the Nb surface. The resulting titanium layer acts as a solid state getter reacting with light impurities (H, C, N, O), thereby removing these impurities from the bulk of the niobium. Evidence of preferential titanium diffusion and segregation at grain boundaries has been studied using PIXE analysis induced by proton microbeam. (author)

  8. The grain boundary segregation of phosphorus in thermally aged and irradiated C-Mn submerged-are weld metal

    Mendes, C.M.

    1999-01-01

    The segregation of free phosphorus atoms to grain boundaries in C-Mn steels has been identified as an embrittlement mechanism. A change in the brittle fracture mechanism from transgranular to intergranular has been observed for materials with higher phosphorus grain boundary coverage. The grain boundary segregation of phosphorus in various steels used in the nuclear power industry has been thermodynamically and kinetically modelled mostly with the Langmuir-McLean model. Recent publications have also suggested that neutron irradiation can affect segregation and various attempts at modelling this are currently under way. The present paper describes a data base assembled on phosphorus grain boundary coverage measured by Auger electron spectroscopy on thermally aged and irradiated C-Mn submerged-arc weld specimens. Software tools were developed to evaluate the changes in phosphorus grain boundary coverage associated with instantaneous temperature changes and temperature gradients. The phosphorus free energy change associated with grain boundary segregation was modelled from the thermally aged data and used with the software to determine the phosphorus segregation in submerged-arc weld metals following the post weld stress relief heat treatments received prior to plant operation. The phosphorus grain boundary coverage changes arising from the thermal history of submerged-arc weld materials during irradiation were also modelled and found to compare well with data obtained on irradiated materials. It was concluded that under the irradiation conditions sampled, phosphorus grain boundary segregation in submerged-arc weld materials can be modelled successfully using only the thermal term without appealing to an irradiation induced segregation process. (author)

  9. Grain boundary segregation in FeCrNi model alloys; Korngrenzensegregation in FeCrNi-Modellegierungen

    Schlueter, B.; Schneider, F.; Mummert, K. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany); Muraleedharan, P. [Indira Gandhi Centre for Atomic Research, Kalpakkam (India). Div. of Metallurgy

    1998-12-31

    P and S segregate at the grain boundaries and thus increase susceptibility to intergranular corrosion at those sites. This could be proven by means of nitric acid-chromate tests and potentiostatic etching tests. There is a direct connection between loss in mass, mean depth of intergranular corrosion attacks, dissolution current density, and level of segregation-induced concentration of P and S at the grain boundaries. The segregation effect at these sites was found to be most evident in specimens of the examined Fe-Cr-Ni steel which had been heat-treated for 1000 hours at 550 C. However, segregation occurs also in materials that received a heat treatment of 400 C/5000 hours, while intergranular corrosion is observed only after heat treatment of 500 C/1000 hours. Apart from segregation of P, formation of Cr-rich phosphides is observed, which leads to depletion of Cr at the precipitates. (orig./CB) [Deutsch] P und S segregieren an die KG und erhoehen dort die IK-Anfaelligkeit. Dies konnte mit Hilfe von Salpetersaeure-Chromat- und Potentiostatischem Aetztest nachgewiesen werden. Es besteht ein direkter Zusammenhang zwischen Masseverlust, mittlerer IK-Angriffstiefe, Aufloesungsstromdichte und Hoehe der segregationsbedingten Anreicherungen von P und S an den KG. Der KG-Segregationseffekt am untersuchten Fe-Cr-Ni-Stahl ist im Waermebehandlungszustand 550 C/1000 h am deutlichsten ausgepraegt. Aber auch bereits bei 400 C/5000 h findet Segregation statt. IKSpRK tritt nur im Waermebehandlungszustand 550 C/1000 h auf. Neben der P-Segregation wird die Bildung Cr-reicher Phosphide beobachtet, die zur Abreicherung von Cr an den Ausscheidungen fuehrt. (orig.)

  10. Improvement in dry active waste segregation and processing

    Hillmer, T.P.; Anderson, K.D.; Dahlen, D.E.

    1989-01-01

    At the Palo Verde Nuclear Generating Station (PVNGS) the majority of dry active waste (DAW) volume reduction activities are performed in the site's new DAW processing and storage facility. This facility houses an interim storage area for a five year volume of compacted DAW, a shredder/compactor, and a DAW segregation area. The DAW segregation program locates and separates non-radioactive and reusable materials from DAW generated at the three unit PVNGS site. This program has saved more than 24,000 cubic feet of burial space and has reclaimed more than $1,000,000 worth of materials. Palo Verde has made numerous changes to the DAW segregation program since its inception. To ensure that the DAW segregation program remained cost effective and in compliance with applicable regulatory guidance, segregation techniques were revised and new equipment was evaluated and procured. This paper details that effort and summarizes the operational data that has been collected

  11. Toepassing geïntegreerde maatregelen geïnvestariseerd

    Heijne, B.

    2009-01-01

    Kennis over 'good practices' en 'best practices' van geïntegreerde bedrijfsstrategieën verspreidt zich snel over Europa. Dat is één van de conclusies van een inventarisatie binnen het project Endure. Het aanplanten van minder vatbare of resistente rassen blijkt weinig toegepast te worden in de

  12. Segregation and Socialization: Academic Segregation and Citizenship Attitudes of Adolescents in Comparative Perspective?

    Dimokritos Kavadias

    2017-07-01

    Full Text Available Purpose: There is a tendency to assess educational systems in terms of their efficiency in gaining high scores on cognitive skills. Schools perform, however, also a socializing function. The whole policy debate tends to ignore the impact of educational systems on attitudes or democratic values. This contribution focuses on the impact of the organization of education in European societies on the civic attitudes of adolescents. Design/methodology/approach: We explore the impact of academic segregation – the practice of segregating children on the basis of their scholastic achievement – on attitudes of adolescents living in different educational systems. We use the International Civic and Citizenship Education Study (2009 relying on multilevel models. Findings: Pupils differ in their outlook on fellow citizens, according to the ways in which educational systems select and differentiate throughout school careers. More specifically, there is a negative impact of academic segregation on the attitudes towards immigrants and ethnic minorities. Research limitations/implications: The experience of adolescents based on their educational achievement seems to affect how they perceive other people. We have not answered the question why this is the case. We hope to have provided a minimal indication of the impact of inequality on social outcomes.

  13. The nature of the Esub(v) + 0.23 eV and Esub(v) + 0.38 eV gamma-induced centres in Ge

    Pearton, S.J.; Tavendale, A.J.

    1982-07-01

    All p-type Ge grown by the Czochralski technique from silica crucibles under an H 2 atmosphere shows two dominant acceptor defects on γ irradiation. Measurements by DLTS are reported which support the hypothesis that these centres (Esub(v) + 0.23 eV, Esub(v) + 0.38 eV) are most likely due to complexes between oxygen and lattice vacancies

  14. Acoustic profilometry of interphases in epoxy due to segregation and diffusion using Brillouin microscopy

    Mueller, U; Bactavatchalou, R; Baller, J; Philipp, M; Sanctuary, R; Zielinski, B; Krueger, J K [Laboratoire de Physique des Materiaux, Universite du Luxembourg, 162A, Avenue de la Faiencerie, L-1115 Luxembourg (Luxembourg); Alnot, P; Possart, W [Laboratoire Europeen de Recherche Universitaire Saarland-Lorraine (Germany)], E-mail: mail@tauron.de

    2008-02-15

    Reactive network forming polymer systems like epoxies are of huge technological interest because of their adhesive properties based on specific interactions with a large variety of materials. These specific interactions alter the morphology of the epoxy within areas determined by the correlation length of these interactions. The changed morphology leads to interphases with altered (mechanical) properties. Besides these surface-induced interphases, bulk interphases do occur due to segregation, crystallization, diffusion, etc. A new experimental technique to characterize such mechanical interphases is {mu}-Brillouin spectroscopy ({mu}-BS). With {mu}-BS, we studied interphases and their formation in epoxies due to segregation of the constituent components and due to selective diffusion of one component. In the latter case, we will demonstrate the influence of changing the boundary conditions of the diffusion process on the shape of the interphase.

  15. Photochemical process of divalent germanium responsible for photorefractive index change in GeO2-SiO2 glasses.

    Sakoh, Akifumi; Takahashi, Masahide; Yoko, Toshinobu; Nishii, Junji; Nishiyama, Hiroaki; Miyamoto, Isamu

    2003-10-20

    The photoluminescence spectra of the divalent Ge (Ge2+) center in GeO2-SiO2 glasses with different photosensitivities were investigated by means of excitation-emission energy mapping. The ultraviolet light induced photorefractivity has been correlated with the local structure around the Ge2+ centers. The glasses with a larger photorefractivity tended to exhibit a greater band broadening of the singlet-singlet transition on the higher excitation energy side accompanied by an increase in the Stokes shifts. This strongly suggests the existence of highly photosensitive Ge2+ centers with higher excitation energies. It is also found that the introduction of a hydroxyl group or boron species in GeO2-SiO2 glasses under appropriate conditions modifies the local environment of Ge2+ leading to an enhanced photorefractivity.

  16. Terrestrial magma ocean and core segregation in the earth

    Ohtani, Eiji; Yurimoto, Naoyoshi

    1992-01-01

    According to the recent theories of formation of the earth, the outer layer of the proto-earth was molten and the terrestrial magma ocean was formed when its radius exceeded 3000 km. Core formation should have started in this magma ocean stage, since segregation of metallic iron occurs effectively by melting of the proto-earth. Therefore, interactions between magma, mantle minerals, and metallic iron in the magma ocean stage controlled the geochemistry of the mantle and core. We have studied the partitioning behaviors of elements into the silicate melt, high pressure minerals, and metallic iron under the deep upper mantle and lower mantle conditions. We employed the multi-anvil apparatus for preparing the equilibrating samples in the ranges from 16 to 27 GPa and 1700-2400 C. Both the electron probe microanalyzer (EPMA) and the Secondary Ion Mass spectrometer (SIMS) were used for analyzing the run products. We obtained the partition coefficients of various trace elements between majorite, Mg-perovskite, and liquid, and magnesiowustite, Mg-perovskite, and metallic iron. The examples of the partition coefficients of some key elements are summarized in figures, together with the previous data. We may be able to assess the origin of the mantle abundances of the elements such as transition metals by using the partitioning data obtained above. The mantle abundances of some transition metals expected by the core-mantle equilibrium under the lower mantle conditions cannot explain the observed abundance of some elements such as Mn and Ge in the mantle. Estimations of the densities of the ultrabasic magma Mg-perovskite at high pressure suggest existence of a density crossover in the deep lower mantle; flotation of Mg-perovskite occurs in the deep magma ocean under the lower mantle conditions. The observed depletion of some transition metals such as V, Cr, Mn, Fe, Co, and Ni in the mantle may be explained by the two stage process, the core-mantle equilibrium under the lower

  17. Magnetic phase diagrams of UNiGe

    Nakotte, H.; Hagmusa, I.H.; Klaasse, J.C.P.; Hagmusa, I.H.; Klaasse, J.C.P.

    1997-01-01

    UNiGe undergoes two magnetic transitions in zero field. Here, the magnetic diagrams of UNiGe for B parallel b and B parallel c are reported. We performed temperatures scans of the magnetization in static magnetic fields up to 19.5T applied along the b and c axes. For both orientations 3 magnetic phases have been identified in the B-T diagrams. We confirmed the previously reported phase boundaries for B parallel c, and in addition we determined the location of the phase boundaries for B parallel b. We discuss a possible relationship of the two zero-field antiferromagnetic phases (commensurate: T<42K; incommensurate: 42K< T<50K) and the field-induced phase, which, at low temperatures, occurs between 18 and 25T or 4 and 10T for B parallel b or B parallel c, respectively. Finally, we discuss the field dependence of the electronic contribution γ to the specific heat for B parallel c up to 17.5T, and we find that its field dependence is similar to the one found in more itinerant uranium compounds

  18. Neutron transmutation doped Ge bolometers

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  19. Selective mobility, segregation and neighbourhood effects

    Sanne Boschman

    2015-11-01

    Full Text Available Introduction The residential neighbourhood is thought to affect residents because of presumed neighbourhood effects; the independent effects of a neighbourhood’s characteristics on the life chances of its residents. An enormous body of research has tried to measure neighbourhood effects, however, there are no clear conclusions on how much, if any, effect the neighbourhood has on its residents. There is non-random selection of people into neighbourhoods which causes a bias in the modelling of neighbourhood effects. Any correlation found between neighbourhood characteristics and individual outcomes might be explained by selection bias and can therefore not prove the existence of a causal neighbourhood effect. The question is; do poor neighbourhoods make people poor, or do poor people live in unattractive neighbourhoods because they cannot afford to live elsewhere (Cheshire, 2007. Therefore, insight in selection is important to gain more insight in neighbourhood effects (Van Ham and Manley, 2012. For neighbourhood effects research it is important to study selective mobility and neighbourhood choice and to combine neighbourhood effects research with neighbourhood selection research (Doff, 2010a; Van Ham and Manley, 2012; Van Ham et al., 2012; Galster, 2003; Hedman, 2011. The aim of this thesis therefore is to gain more insight in both the causes and the consequences of segregation and thus to study both individual residential mobility and neighbourhood selection and neighbourhood effects. Besides the neighbourhood effects literature, also the segregation literature will benefit from better insights in selective residential mobility because selective residential mobility is one of the main driving forces of segregation.  There are two main research questions for this thesis. Firstly, I try to give insight in selective mobility and neighbourhood choice and thus to study where, when and why which people move. What is the effect of personal

  20. Taylor revisited: Gender segregation and division of labour in the ICT - sector (information and communication technology)

    Nygaard, Else

    2001-01-01

    Information and communication technology, division of labour, gender segregation, working conditions......Information and communication technology, division of labour, gender segregation, working conditions...

  1. Texture segregation, surface representation and figure-ground separation.

    Grossberg, S; Pessoa, L

    1998-09-01

    A widespread view is that most texture segregation can be accounted for by differences in the spatial frequency content of texture regions. Evidence from both psychophysical and physiological studies indicate, however, that beyond these early filtering stages, there are stages of 3-D boundary segmentation and surface representation that are used to segregate textures. Chromatic segregation of element-arrangement patterns--as studied by Beck and colleagues--cannot be completely explained by the filtering mechanisms previously employed to account for achromatic segregation. An element arrangement pattern is composed of two types of elements that are arranged differently in different image regions (e.g. vertically on top and diagonally on the bottom). FACADE theory mechanisms that have previously been used to explain data about 3-D vision and figure-ground separation are here used to simulate chromatic texture segregation data, including data with equiluminant elements on dark or light homogeneous backgrounds, or backgrounds composed of vertical and horizontal dark or light stripes, or horizontal notched stripes. These data include the fact that segregation of patterns composed of red and blue squares decreases with increasing luminance of the interspaces. Asymmetric segregation properties under 3-D viewing conditions with the equiluminant elements close or far are also simulated. Two key model properties are a spatial impenetrability property that inhibits boundary grouping across regions with non-collinear texture elements and a boundary-surface consistency property that uses feedback between boundary and surface representations to eliminate spurious boundary groupings and separate figures from their backgrounds.

  2. Segregation in ternary alloys: an interplay of driving forces

    Luyten, J.; Helfensteyn, S.; Creemers, C.

    2003-01-01

    Monte Carlo (MC) simulations combined with the constant bond energy (CBE) model are set up to explore and understand the general segregation behaviour in ternary alloys as a function of composition and more in particular the segregation to Cu-Ni-Al (1 0 0) surfaces. Besides its simplicity, allowing swift simulations, which are necessary for a first general survey over all possible compositions, one of the advantages of the CBE model lies in the possibility to clearly identify the different driving forces for segregation. All simulations are performed in the Grand Canonical Ensemble, using a new algorithm to determine the chemical potential of the components. Notwithstanding the simplicity of the CBE model, one extra feature is evidenced: depending on the values of the interatomic interaction parameters, in some regions of the ternary diagram, a single solid solution becomes thermodynamically unstable, leading to demixing into two conjugate phases. The simulations are first done for three hypothetical systems that are however representative for real alloy systems. The three systems are characterised by different sets of interatomic interaction parameters. These extensive simulations over the entire composition range of the ternary alloy yield a 'topographical' segregation map, showing distinct regions where different species segregate. These distinct domains originate from a variable interplay between the driving forces for segregation and attractive/repulsive interactions in the bulk of the alloy. The results on these hypothetical systems are very helpful for a better understanding of the segregation behaviour in Cu-Ni-Al and other ternary alloys

  3. The evolution of costly mate choice against segregation distorters.

    Manser, Andri; Lindholm, Anna K; Weissing, Franz J

    2017-12-01

    The evolution of female preference for male genetic quality remains a controversial topic in sexual selection research. One well-known problem, known as the lek paradox, lies in understanding how variation in genetic quality is maintained in spite of natural selection and sexual selection against low-quality alleles. Here, we theoretically investigate a scenario where females pay a direct fitness cost to avoid males carrying an autosomal segregation distorter. We show that preference evolution is greatly facilitated under such circumstances. Because the distorter is transmitted in a non-Mendelian fashion, it can be maintained in the population despite directional sexual selection. The preference helps females avoid fitness costs associated with the distorter. Interestingly, we find that preference evolution is limited if the choice allele induces a very strong preference or if distortion is very strong. Moreover, the preference can only persist in the presence of a signal that reliably indicates a male's distorter genotype. Hence, even in a system where the lek paradox does not play a major role, costly preferences can only spread under specific circumstances. We discuss the importance of distorter systems for the evolution of costly female choice and potential implications for the use of artificial distorters in pest control. © 2017 The Author(s). Evolution © 2017 The Society for the Study of Evolution.

  4. Mechanisms of time-based figure-ground segregation.

    Kandil, Farid I; Fahle, Manfred

    2003-11-01

    Figure-ground segregation can rely on purely temporal information, that is, on short temporal delays between positional changes of elements in figure and ground (Kandil, F.I. & Fahle, M. (2001) Eur. J. Neurosci., 13, 2004-2008). Here, we investigate the underlying mechanisms by measuring temporal segregation thresholds for various kinds of motion cues. Segregation can rely on monocular first-order motion (based on luminance modulation) and second-order motion cues (contrast modulation) with a high temporal resolution of approximately 20 ms. The mechanism can also use isoluminant motion with a reduced temporal resolution of 60 ms. Figure-ground segregation can be achieved even at presentation frequencies too high for human subjects to inspect successive frames individually. In contrast, when stimuli are presented dichoptically, i.e. separately to both eyes, subjects are unable to perceive any segregation, irrespective of temporal frequency. We propose that segregation in these displays is detected by a mechanism consisting of at least two stages. On the first level, standard motion or flicker detectors signal local positional changes (flips). On the second level, a segregation mechanism combines the local activities of the low-level detectors with high temporal precision. Our findings suggest that the segregation mechanism can rely on monocular detectors but not on binocular mechanisms. Moreover, the results oppose the idea that segregation in these displays is achieved by motion detectors of a higher order (motion-from-motion), but favour mechanisms sensitive to short temporal delays even without activation of higher-order motion detectors.

  5. Segregation of granular binary mixtures by a ratchet mechanism.

    Farkas, Zénó; Szalai, Ferenc; Wolf, Dietrich E; Vicsek, Tamás

    2002-02-01

    We report on a segregation scheme for granular binary mixtures, where the segregation is performed by a ratchet mechanism realized by a vertically shaken asymmetric sawtooth-shaped base in a quasi-two-dimensional box. We have studied this system by computer simulations and found that most binary mixtures can be segregated using an appropriately chosen ratchet, even when the particles in the two components have the same size and differ only in their normal restitution coefficient or friction coefficient. These results suggest that the components of otherwise nonsegregating granular mixtures may be separated using our method.

  6. Correlates of figure-ground segregation in fMRI.

    Skiera, G; Petersen, D; Skalej, M; Fahle, M

    2000-01-01

    We investigated which correlates of figure-ground-segregation can be detected by means of functional magnetic resonance imaging (fMRI). Five subjects were scanned with a Siemens Vision 1.5 T system. Motion, colour, and luminance-defined checkerboards were presented with alternating control conditions containing one of the two features of the checkerboard. We find a segregation-specific activation in V1 for all subjects and all stimuli and conclude that neural mechanisms exist as early as in the primary visual cortex that are sensitive to figure-ground segregation.

  7. Surface, segregation profile for Ni50Pd50(100)

    Christensen, Asbjørn; Ruban, Andrei; Skriver, Hans Lomholt

    1997-01-01

    A recent dynamical LEED study [G.N. Derry, C.B. McVey, P.J. Rous, Surf. Sci. 326 (1995) 59] reported an oscillatory surface segregation profile in the Ni50Pd50(100) system with the surface layer enriched by Pd. We have performed ab-initio total-energy calculations for the surface of this alloy...... system using the coherent potential approximation and obtain an oscillatory segregation profile, in agreement with experiments. We discuss the energetic origin of the oscillatory segregation profile in terms of effective cluster interactions. We include relaxation effects by means of the semi...

  8. Bayesian linkage and segregation analysis: factoring the problem.

    Matthysse, S

    2000-01-01

    Complex segregation analysis and linkage methods are mathematical techniques for the genetic dissection of complex diseases. They are used to delineate complex modes of familial transmission and to localize putative disease susceptibility loci to specific chromosomal locations. The computational problem of Bayesian linkage and segregation analysis is one of integration in high-dimensional spaces. In this paper, three available techniques for Bayesian linkage and segregation analysis are discussed: Markov Chain Monte Carlo (MCMC), importance sampling, and exact calculation. The contribution of each to the overall integration will be explicitly discussed.

  9. GE Healthcare | College of Engineering & Applied Science

    Olympiad Girls Who Code Club FIRST Tech Challenge NSF I-Corps Site of Southeastern Wisconsin UW-Milwaukee ; Talent GE Healthcare is the founding partner of the Center for Advanced Embedded Systems (CAES), formerly GE Healthcare's needs for talent. Business Corporate Partners ANSYS Institute GE Healthcare Catalyst

  10. MINORITY LANGUAGES IN ESTONIAN SEGREGATIVE LANGUAGE ENVIRONMENTS

    Elvira Küün

    2011-01-01

    Full Text Available The goal of this project in Estonia was to determine what languages are spoken by students from the 2nd to the 5th year of basic school at their homes in Tallinn, the capital of Estonia. At the same time, this problem was also studied in other segregated regions of Estonia: Kohtla-Järve and Maardu. According to the database of the population census from the year 2000 (Estonian Statistics Executive Office's census 2000, there are representatives of 142 ethnic groups living in Estonia, speaking a total of 109 native languages. At the same time, the database doesn’t state which languages are spoken at homes. The material presented in this article belongs to the research topic “Home Language of Basic School Students in Tallinn” from years 2007–2008, specifically financed and ordered by the Estonian Ministry of Education and Research (grant No. ETF 7065 in the framework of an international study called “Multilingual Project”. It was determined what language is dominating in everyday use, what are the factors for choosing the language for communication, what are the preferred languages and language skills. This study reflects the actual trends of the language situation in these cities.

  11. New segregation analysis of panic disorder

    Vieland, V.J.; Fyer, A.J.; Chapman, T. [Columbia Univ., New York, NY (United States)] [and others

    1996-04-09

    We performed simple segregation analyses of panic disorder using 126 families of probands with DSM-III-R panic disorder who were ascertained for a family study of anxiety disorders at an anxiety disorders research clinic. We present parameter estimates for dominant, recessive, and arbitrary single major locus models without sex effects, as well as for a nongenetic transmission model, and compare these models to each other and to models obtained by other investigators. We rejected the nongenetic transmission model when comparing it to the recessive model. Consistent with some previous reports, we find comparable support for dominant and recessive models, and in both cases estimate nonzero phenocopy rates. The effect of restricting the analysis to families of probands without any lifetime history of comorbid major depression (MDD) was also examined. No notable differences in parameter estimates were found in that subsample, although the power of that analysis was low. Consistency between the findings in our sample and in another independently collected sample suggests the possibility of pooling such samples in the future in order to achieve the necessary power for more complex analyses. 32 refs., 4 tabs.

  12. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  13. Exchange and Dzyaloshinskii-Moriya interactions in bulk FeGe: Effects of atomic vacancies

    Loh, G. C.; Gan, C. K.

    2017-05-01

    We examine the effects of atomic vacancies on the (1) spin interaction, and (2) electronic character in the cubic B20 chiral magnet FeGe. For the former, Heisenberg exchange and Dzyaloshinskii-Moriya (DM) interactions are studied. The latter is done via a particular Wannier flavor of the Hamiltonian in the form of maximally-localized Wannier functions (MLWFs). Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW)-based density functional theory (DFT), the spin order of bulk FeGe, in its pristine form, and with a Fe (Fe75%Ge100%) or Ge vacancy (Fe100%Ge75%) is investigated. Despite the presence of vacancies, the ground state of FeGe remains helimagnetic, i.e. spin spirals in FeGe are fairly robust. The energetic stability of FeGe increases in the presence of the vacancies. The spiral size is increased by approximately 40%, suggesting that vacancies can be introduced to manipulate the chiral order. The vacancies lift the band degeneracy in the valence manifold of the Wannier-interpolated band structures. Only the spin-down Fermi surfaces are substantially different between the pristine and defective FeGe; it is electron-like in the pristine case, but largely hole-like in the defective ones. The Ge vacancy splits the Fermi surface more than the Fe vacancy. The Heisenberg exchange between nearest Fe pairs is ferromagnetic in pristine FeGe. This Fe-Fe interaction remains ferromagnetic, albeit a slight decrease in strength, in the presence of a Fe vacancy. In contrast, a Ge vacancy in FeGe induces anti-ferromagnetism between nearest Fe pairs. By including spin-orbit coupling effects, we find that the DM interaction of defective FeGe is reversed in sign, and it is more uniform in strength along the three highly symmetric directions, relative to that in pristine FeGe. All in all, the versatility of FeGe makes it an excellent functional material, especially in data storage and spintronics applications.

  14. Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

    Nakata, M.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Jevasuwan, W.; Fukata, N. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-09-28

    Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.

  15. Mechanism of dopant-vacancy association in α-quartz GeO2

    Wang, Hao; Chroneos, Alexander; Schwingenschlö gl, Udo

    2013-01-01

    Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.

  16. Mechanism of dopant-vacancy association in α-quartz GeO2

    Wang, Hao

    2013-02-28

    Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.

  17. Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

    Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

    2001-01-01

    The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

  18. Ion Beam Synthesis of Ge Nanowires. rev. ed.

    Mueller, T.

    2001-01-01

    The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1 x 10{sup 17} Ge{sup +}cm{sup -2} at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N{sub 2} atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. (orig.)

  19. Dipole Resonances of 76Ge

    Ilieva, R. S.; Cooper, N.; Werner, V.; Rusev, G.; Pietralla, N.; Kelly, J. H.; Tornow, W.; Yates, S. W.; Crider, B. P.; Peters, E.

    2013-10-01

    Dipole resonances in 76Ge have been studied using the method of Nuclear Resonance Fluorescence (NRF). The experiment was performed using the Free Electron Laser facility at HI γS/TUNL, which produced linearly polarised quasi-monoenergetic photons in the 4-9 MeV energy range. Photon strength, in particular dipole strength, is an important ingredient in nuclear reaction calculations, and recent interest in its study has been stimulated by observations of a pygmy dipole resonance near the neutron separation energy Sn of certain nuclei. Furthermore, 76Ge is a candidate for 0 ν 2 β -decay. The results are complimentary to a relevant experiment done at TU Darmstadt using Bremsstrahlung beams. Single-resonance parities and a preliminary estimate of the total photo-excitation cross section will be presented. This work was supported by the U.S. DOE under grant no. DE-FG02-91ER40609.

  20. Use of segregation techniques to reduce stored low level waste

    Nascimento Viana, R.; Vianna Mariano, N.; Antonio do Amaral, M.

    2000-01-01

    This paper describes the use of segregation techniques in reducing the stored Low Level Waste on Intermediate Waste Repository 1, at Angra Nuclear Power Plant Site, from 1701 to 425 drums of compacted waste. (author)