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Sample records for indium-doped tin telluride

  1. The effect of preparation method on the proton conductivity of indium doped tin pyrophosphates

    Anfimova, Tatiana; Lie-Andersen, T.; Jensen, E. Pristed

    2015-01-01

    Indium doped tin pyrophosphates were prepared by three synthetic routes. A heterogeneous synthesis from metal oxides with excess phosphoric acid produces crystalline phosphate particles with a phosphorus rich amorphous phase along the grain boundaries. The amorphous phase prevents the agglomeration...... decrease in conductivity as well as significant agglomeration of the particles, as evident in TEM and from particle size distribution measurements. Homogeneous synthesis with soluble metal acetates or chlorides as precursors results in a single crystalline phase with a small particle size, but strongly...... agglomerated, and a low conductivity at 10- 7-10- 6 Scm- 1 level. Further impregnation of the agglomerates with phosphoric acid does not lead to formation of the phosphorus rich amorphous layers on the surface of the crystals. An intermediate conductivity of 10- 3 Scm- 1 was observed for the acid treated...

  2. Modulating indium doped tin oxide electrode properties for laccase electron transfer enhancement

    Diaconu, Mirela [National Institute for Biological Sciences, Centre of Bioanalysis, 296 Spl. Independentei, Bucharest 060031 (Romania); Chira, Ana [National Institute for Biological Sciences, Centre of Bioanalysis, 296 Spl. Independentei, Bucharest 060031 (Romania); Politehnica University of Bucharest, Faculty of Applied Chemistry and Materials Science, 1-7 Polizu Str., 011061 (Romania); Radu, Lucian, E-mail: gl_radu@chim.upb.ro [Politehnica University of Bucharest, Faculty of Applied Chemistry and Materials Science, 1-7 Polizu Str., 011061 (Romania)

    2014-08-28

    Indium doped tin oxide (ITO) electrodes were functionalized with gold nanoparticles (GNPs) and cysteamine monolayer to enhance the heterogeneous electron transfer process of laccase from Trametes versicolor. The assembly of GNP on ITO support was performed through generation of H{sup +} species at the electrode surface by hydroquinone electrooxidation at 0.9 V vs Ag/AgCl. Uniform distribution of gold nanoparticle aggregates on electrode surfaces was confirmed by atomic force microscopy. The size of GNP aggregates was in the range of 200–500 nm. The enhanced charge transfer at the GNP functionalized ITO electrodes was observed by cyclic voltammetry (CV) and electrochemical impedance spectroscopy. Electrocatalytic behavior of laccase immobilized on ITO modified electrode toward oxygen reduction reaction was evaluated using CV in the presence of 2,2′-azino-bis 3-ethylbenzothiazoline-6-sulfuric acid (ABTS). The obtained sigmoidal-shaped voltammograms for ABTS reduction in oxygen saturated buffer solution are characteristic for a catalytic process. The intensity of catalytic current increased linearly with mediator concentration up to 6.2 × 10{sup −4} M. The registered voltammogram in the absence of ABTS mediator clearly showed a significant faradaic current which is the evidence of the interfacial oxygen reduction. - Highlights: • Assembly of gold nanoparticles on indium tin oxide support at positive potentials • Electrochemical and morphological evaluation of the gold nanoparticle layer assembly • Bioelectrocatalytic oxygen reduction on laccase modified electrode.

  3. New method for preparation of polyoxometalate-capped gold nanoparticles, and their assembly on an indium-doped tin oxide electrode

    Cheng, Y.; Zheng, J.; Wang, Z.; Liu, L.; Wu, Y.; Yang, J.

    2011-01-01

    Functionalized gold nanoparticles capped with polyoxometalates were prepared by a simple photoreduction technique where phosphododecamolybdates serve as reducing reagents, photocatalysts, and as stabilizers. TEM images of the resulting gold nanoparticles show the particles to have a relative narrow size distribution. Monolayer and multilayer structures of the negatively charged capped gold nanoparticles were deposited on a poly(vinyl pyridine)-derivatized indium-doped tin oxide (ITO) electrode via the layer-by-layer technique. The surface plasmon resonance band of the gold nanoparticles displays a blue shift on the surface of the ITO electrode. This is due to the substrate-induced charge redistribution in the gold nanoparticles and a change in the electromagnetic coupling between the assembled nanoparticles. The modified electrode exhibits the characteristic electrochemical behavior of surface-confined phosphododecamolybdate and excellent electrocatalytic activity. The catalysis of the modified electrode towards the model compound iodate was systematically studied. The heterogeneous catalytic rate constant for the electrochemical reduction of iodate was determined by chronoamperometry to be ca. 1. 34 x 10 5 mol -1 .L.s -1 . The amperometric method gave a linear range from 2. 5 x 10 -6 to 1. 5 x 10 -3 M and a detection limit of 1. 0 x 10 -6 M. We believe that the functionalized gold nanoparticles prepared by this photoreduction technique are advantageous in terms of fabrication of sensitive and stable redox electrodes. (author)

  4. Electrochemical Characterization of Nanoporous Nickel Oxide Thin Films Spray-Deposited onto Indium-Doped Tin Oxide for Solar Conversion Scopes

    Muhammad Awais

    2015-01-01

    Full Text Available Nonstoichiometric nickel oxide (NiOx has been deposited as thin film utilizing indium-doped tin oxide as transparent and electrically conductive substrate. Spray deposition of a suspension of NiOx nanoparticles in alcoholic medium allowed the preparation of uniform NiOx coatings. Sintering of the coatings was conducted at temperatures below 500°C for few minutes. This scalable procedure allowed the attainment of NiOx films with mesoporous morphology and reticulated structure. The electrochemical characterization showed that NiOx electrodes possess large surface area (about 1000 times larger than their geometrical area. Due to the openness of the NiOx morphology, the underlying conductive substrate can be contacted by the electrolyte and undergo redox processes within the potential range in which NiOx is electroactive. This requires careful control of the conditions of polarization in order to prevent the simultaneous occurrence of reduction/oxidation processes in both components of the multilayered electrode. The combination of the open structure with optical transparency and elevated electroactivity in organic electrolytes motivated us to analyze the potential of the spray-deposited NiOx films as semiconducting cathodes of dye-sensitized solar cells of p-type when erythrosine B was the sensitizer.

  5. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

    Choi, Mu Hee; Ma, Tae Young, E-mail: tyma@gnu.ac.kr

    2014-01-01

    In this study, the effects of indium (In) doping on the properties of zinc tin oxide (ZTO) films are reported. ZTO films were prepared by RF magnetron sputtering followed by In layer deposition, for use as the diffusion source. In order to protect the In layer from peeling, a second ZTO film was deposited on the In film. The annealing at 400 °C for 30 min was carried out to diffuse In atoms into the ZTO films. The structural, optical, and elemental properties of the annealed ZTO/In/ZTO films were investigated by X-ray diffraction, UV/vis spectrophotometry, and X-ray photoluminescence spectroscopy, respectively. The ZTO transparent thin film transistors employing the ZTO/In/ZTO films as the source/drain were prepared, and the effects of the In doped source/drain on the threshold voltage and mobility were characterized and analyzed. - Highlights: • We successfully doped zinc tin oxide (ZTO) films using In as a diffusion source. • Indium (In) was diffused in both directions with the diffusion coefficient of ∼ 4.3 × 10{sup −16} cm{sup 2}/s. • The mobility of ZTO thin film transistor was increased 1.6-times by adopting the In-diffused source/drain.

  6. Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

    Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); International Center for Young Scientists (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Ohsawa, Takeo; Ross, Emily M., E-mail: emross@hmc.edu; Adachi, Yutaka; Haneda, Hajime [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakaguchi, Isao; Takahashi, Ryosuke [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Materials Department, University of California, Santa Barbara, California 93106 (United States); White, Mark E.; Tsai, Min-Ying; Speck, James S., E-mail: speck@ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

    2014-03-31

    The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO{sub 2}) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO{sub 2}. The H-concentration of the In-doped SnO{sub 2} films increased to (1–2) × 10{sup 19} cm{sup −3} by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

  7. Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

    Watanabe, Ken; Ohsawa, Takeo; Ross, Emily M.; Adachi, Yutaka; Haneda, Hajime; Sakaguchi, Isao; Takahashi, Ryosuke; Bierwagen, Oliver; White, Mark E.; Tsai, Min-Ying; Speck, James S.; Ohashi, Naoki

    2014-01-01

    The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO 2 ) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO 2 . The H-concentration of the In-doped SnO 2 films increased to (1–2) × 10 19  cm −3 by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations

  8. Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

    Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

    1980-01-01

    The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

  9. Studies on preparation and characterization of indium doped zinc ...

    Unknown

    The preparation of indium doped zinc oxide films is discussed. ... XRD studies have shown a change in preferential orientation from (002) to .... at grain boundaries in the form of In(OH)3, hindering the .... Angular substrate to nozzle distance.

  10. Indium doped zinc oxide thin films obtained by electrodeposition

    Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

    2005-01-01

    Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

  11. Indium doped Cd{sub 1-x}Zn{sub x}O alloys as wide window transparent conductors

    Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Walukiewicz, W. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-12-31

    We have synthesized Indium doped Cd{sub 1-x}Zn{sub x}O alloys across the full composition range using magnetron sputtering method. The crystallographic structure of these alloys changes from rocksalt (RS) to wurtzite (WZ) when the Zn content is higher than 30%. The rocksalt phase alloys in the composition range 0 < x < 0.3 can be efficiently n-type doped, shifting the absorption edge to 3.25 eV and reducing resistivity to about 2.0 × 10{sup −4} Ω-cm. We found that In doped CdO (ICO) transmits more solar photons than commercial fluorine doped tin oxide (FTO) with comparable sheet conductivity. The infrared transmittance is further extended to longer than 1500 nm wavelengths by depositing the In doped Cd{sub 1-x}Zn{sub x}O in ~ 1% of O{sub 2}. This material has a potential for applications as a transparent conductor for silicon and multi-junction solar cells. - Highlights: • Indium doped Cd1-xZnxO alloys across the full composition range were synthesized. • Alloys change from rocksalt (RS) to wurtzite (WZ) when x is higher than 30%. • RS-Cd1-xZnxO phase can be doped with In as efficiently as CdO, achieving a low resistivity ~ 2.0 × 10{sup −4} Ω-cm. • Wide transparency window from 380 to 1200 nm • In doped CdO transmits more solar photons than commercial fluorine doped tin oxide.

  12. Selectivity enhancement of indium-doped SnO2 gas sensors

    Salehi, A.

    2002-01-01

    Indium doping was used to enhance the selectivity of SnO 2 gas sensor. Both indium-doped and undoped SnO 2 gas sensors fabricated with different deposition techniques were investigated. The changes in the sensitivity of the sensors caused by selective gases (hydrogen and wood smoke) ranging from 500 to 3000 ppm were measured at different temperatures from 50 to 300 deg. C. The sensitivity peaks of the samples exhibit different values for selective gases with a response time of approximately 0.5 s. Thermally evaporated indium-doped SnO 2 gas sensor shows a considerable increase in the sensitivity peak of 27% in response to wood smoke, whereas it shows a sensitivity peak of 7% to hydrogen. This is in contrast to the sputter deposited indium-doped SnO 2 gas sensor, which exhibits a much lower sensitivity peak of approximately 2% to hydrogen and wood smoke compared to undoped SnO 2 gas sensors fabricated by chemical vapor deposition and spray pyrolysis. Scanning electron microscopy shows that different deposition techniques result in different porosity of the films. It is observed that the thermally evaporated indium-doped SnO 2 gas sensor shows high porosity, while the sputtered sample exhibits almost no porosity

  13. Growth and Characterization of Indium Doped ZnO Nano wires Using Thermal Evaporation Method

    Abrar Ismardi; Dee, C.F.; Majlis, B.Y.

    2011-01-01

    Indium doped ZnO nano wires were grown on silicon substrate using vapor thermal deposition method without using any catalyst. Morphological structures were extensively investigated using field emission scanning electron microscopy (FESEM) and show that the nano wires have uniformly hexagonal nano structures with diameters less than 100 nm and lengths from one to a few microns. The sample was measured for elemental composition with energy dispersive X-ray (EDX) spectroscopy, Zn, In and O elements were found on the sample. XRD spectrum of indium doped ZnO nano wires revealed that the nano wires have a high crystalline structure. (author)

  14. Tin

    Kamilli, Robert J.; Kimball, Bryn E.; Carlin, James F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Tin (Sn) is one of the first metals to be used by humans. Almost without exception, tin is used as an alloy. Because of its hardening effect on copper, tin was used in bronze implements as early as 3500 B.C. The major uses of tin today are for cans and containers, construction materials, transportation materials, and solder. The predominant ore mineral of tin, by far, is cassiterite (SnO2).In 2015, the world’s total estimated mine production of tin was 289,000 metric tons of contained tin. Total world reserves at the end of 2016 were estimated to be 4,700,000 metric tons. China held about 24 percent of the world’s tin reserves and accounted for 38 percent of the world’s 2015 production of tin.The proportion of scrap used in tin production is between 10 and 25 percent. Unlike many metals, tin recycling is relatively efficient, and the fraction of tin in discarded products that get recycled is greater than 50 percent.Only about 20 percent of the world’s identified tin resources occur as primary hydrothermal hard-rock veins, or lodes. These lodes contain predominantly high-temperature minerals and almost invariably occur in close association with silicic, peraluminous granites. About 80 percent of the world’s identified tin resources occur as unconsolidated secondary or placer deposits in riverbeds and valleys or on the sea floor. The largest concentration of both onshore and offshore placers is in the extensive tin belt of Southeast Asia, which stretches from China in the north, through Thailand, Burma (also referred to as Myanmar), and Malaysia, to the islands of Indonesia in the south. Furthermore, tin placers are almost always found closely allied to the granites from which they originate. Other countries with significant tin resources are Australia, Bolivia, and Brazil.Most hydrothermal tin deposits belong to what can be thought of as a superclass of porphyry-greisen deposits. The hydrothermal tin deposits are all characterized by a close spatial

  15. Effect of indium doping on zinc oxide films prepared by chemical ...

    Administrator

    confirmed by X-ray diffraction technique which leads to the introduction of defects in ZnO. Indium doping ... elements like Al, Ga and In can be used as n-type dopant. (Kato et al 2002) .... (α is the absorption coefficient and hν the photon energy).

  16. Laser- and gamma-induced transformations of optical spectra of indium-doped sodium borate glass

    Kopyshinsky, O V; Zelensky, S E; Danilchenko, B A; Shakhov, O P

    2003-01-01

    The optical absorption and luminescence properties of indium-doped sodium borate glass irradiated by gamma-rays and by powerful UV lasers within the impurity-related absorption band are investigated experimentally. It is demonstrated that both the laser- and gamma-irradiation cause similar transformations of optical spectra in the UV and visible regions. The changes of the spectra observed are described with the use of a model which includes three types of impurity centres formed by differently charged indium ions.

  17. Effect of Indium Doping on the Sensitivity of SnO2 Gas Sensor

    Suharni; Sayono

    2009-01-01

    The dependence of sensitivity f SnO 2 gas sensors on indium concentration has been studied. Undoped and indium-doped SnO 2 gas sensors have been prepared by DC sputtering technique with following parameters i.e : electrode voltage of 3 kV, current 20 mA, vacuum pressure 1.8 × 10 -1 torr, deposition time 60 minutes and temperature of 200℃. The effect of weight variations of indium in order of 0.0370; 0.0485 and 0.0702 grams into SnO 2 thin film gas sensor for optimum result were investigated. The measurement of resistance, sensitivity and response time for various temperature for detecting of carbon monoxide (CO), Ammonia (NH 3 ) and acetone (CH 3 COCH 3 ) gas for indium doped has been done. From the analysis result shows that for indium doped 0.0702 g on the SnO 2 the resistance can be decreased from 832.0 kΩ to 3.9 kΩ and the operating temperature from 200℃ to 90℃ and improving the sensitivity from 15.92% to 40.09% and a response time from 30 seconds to 10 seconds for CO. (author)

  18. Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

    Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

    2008-01-01

    Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

  19. Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

    Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

    2011-01-01

    Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

    Ziyang Hu

    2011-01-01

    Full Text Available Indium-doped zinc oxide (IZO thin films were prepared by low-cost ultrasonic spray pyrolysis (USP. Both a low resistivity (3.13×10−3 Ω cm and an average direct transmittance (400∼1500 nm about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV devices based on poly(3-hexylthiophene and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

  1. Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

    Rajesh Biswal

    2014-07-01

    Full Text Available The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002 to (101 planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

  2. Mediatorless bioelectrocatalysis of dioxygen reduction at indium-doped tin oxide (ITO) and ITO nanoparticulate film electrodes

    Rozniecka, Ewa; Jonsson-Niedziolka, Martin; Sobczak, Janusz W.; Opallo, Marcin

    2011-01-01

    Highlights: → We introduced ITO nanoparticulate films for enzyme immobilization. → The material promotes mediatorless bioelectrocatalysis towards dioxygen reduction. → The electrocatalytical current increase with the thickness of nanoparticulate film. → There is no difference in electrocatalytic current in the presence or absence of mediator. → The stability of the electrode can be improved by crosslinking of the enzyme with bovine serum albumin and glutaraldehyde. - Abstract: Bilirubin oxidase was immobilised on ITO electrodes: bare or covered by ITO nanoparticulate film. The latter material was obtained by immersion and withdrawal of the substrate into ITO nanoparticles suspension. Formation of a protein deposit was confirmed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. The electrode surface is covered by a protein film in the form of globular aggregates and it exhibits mediatorless electrocatalytic activity towards dioxygen reduction to water at pH 4.8. Modification of the electrode with ITO particles increases its catalytic activity about ten times up to 110 μA cm -2 seen for electrodes prepared by twelve immersion and withdrawal steps into ITO nanoparticle suspension. The catalytic activity is almost unaffected by addition of mediator to solution. The stability of the electrodes is increased by cross-linking of the enzyme with bovine serum albumin and glutaraldehyde. This electrode was applied as biocathode in a zinc-dioxygen battery operating in 0.1 mol dm -3 McIlvaine buffer (pH 4.8).

  3. Mediatorless bioelectrocatalysis of dioxygen reduction at indium-doped tin oxide (ITO) and ITO nanoparticulate film electrodes

    Rozniecka, Ewa; Jonsson-Niedziolka, Martin; Sobczak, Janusz W. [Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warszawa (Poland); Opallo, Marcin, E-mail: mopallo@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warszawa (Poland)

    2011-10-01

    Highlights: > We introduced ITO nanoparticulate films for enzyme immobilization. > The material promotes mediatorless bioelectrocatalysis towards dioxygen reduction. > The electrocatalytical current increase with the thickness of nanoparticulate film. > There is no difference in electrocatalytic current in the presence or absence of mediator. > The stability of the electrode can be improved by crosslinking of the enzyme with bovine serum albumin and glutaraldehyde. - Abstract: Bilirubin oxidase was immobilised on ITO electrodes: bare or covered by ITO nanoparticulate film. The latter material was obtained by immersion and withdrawal of the substrate into ITO nanoparticles suspension. Formation of a protein deposit was confirmed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. The electrode surface is covered by a protein film in the form of globular aggregates and it exhibits mediatorless electrocatalytic activity towards dioxygen reduction to water at pH 4.8. Modification of the electrode with ITO particles increases its catalytic activity about ten times up to 110 {mu}A cm{sup -2} seen for electrodes prepared by twelve immersion and withdrawal steps into ITO nanoparticle suspension. The catalytic activity is almost unaffected by addition of mediator to solution. The stability of the electrodes is increased by cross-linking of the enzyme with bovine serum albumin and glutaraldehyde. This electrode was applied as biocathode in a zinc-dioxygen battery operating in 0.1 mol dm{sup -3} McIlvaine buffer (pH 4.8).

  4. On the relaxation rate distribution of the photoionized DX centers in indium doped Cd1-xMnxTe

    Trzmiel, J; Placzek-Popko, E; Gumienny, Z; Weron, K; Becla, P

    2009-01-01

    It was recently shown that the kinetics of persistent photoconductivity (PPC) build-up in indium doped Cd 1-x Mn x Te are non-exponential and can be described solely by the stretched-exponential function. The non-exponentiality is attributed to the indium related DX centers present in the materials. In order to explain this observation, low temperature photoconductivity build-up was studied for Cd 1-x Mn x Te:In of two different manganese contents. It was found that this type of response has its origin in the heavy-tailed distribution of the DX centers. The distribution was analyzed in terms of photon flux. Increasing photon flux leads to the more dispersive behavior. It was also confirmed that the heavy-tailed distribution is due to the different local configuration of atoms surrounding DX centers in the alloy.

  5. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  6. Growth and characterization of indium-doped Cd1−xZnxTe crystal by traveling heater method

    Wei, Gaoli; Wang, Linjun; Zhang, Jijun; Yuan, Zhenwen; Qin, Kaifeng; Min, Jiahua; Liang, Xiaoyan; Xia, Yiben

    2013-01-01

    An indium-doped detector grade Cd 0.9 Zn 0.1 Te crystal was grown by the THM technique from Te-rich solution. The as-grown crystal showed the dark resistivity of (1–3)×10 10 Ω cm. Through IR transmission microscopy Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 μm and the concentration was ∼10 5 cm −3 . The impurity concentrations were greatly reduced for the THM grown CZT, as compared to the Bridgman method grown CZT. A resolution of 8.5% was achieved under the 662 keV 137 Cs gamma ray radiation at room temperature for the as-grown CZT samples. -- Highlights: ► Detector grade Cd 1−x Zn x Te has been successfully grown by the THM technique. ► The as-grown CZT has a resistivity of ∼10 10 Ω cm. ► Te inclusions' size and concentration were comparable to the commercial CZT. ► A resolution of 8.5% was achieved for the 137 Cs 662 keVgamma line

  7. Compositional dependence of optical and electrical properties of indium doped zinc oxide (IZO) thin films deposited by chemical spray pyrolysis

    Dintle, Lawrence K.; Luhanga, Pearson V. C.; Moditswe, Charles; Muiva, Cosmas M.

    2018-05-01

    The structural and optoelectronic properties of undoped and indium doped zinc oxide (IZO) thin films grown on glass substrates through a simple reproducible custom-made pneumatic chemical spray pyrolysis technique are presented. X-ray diffraction (XRD) results showed a polycrystalline structure of hexagonal wurtzite phase growing preferentially along the (002) plane for the undoped sample. Increase in dopant content modified the orientation leading to more pronounced (100) and (101) reflections. Optical transmission spectra showed high transmittance of 80-90% in the visible range for all thin films. The optical band gap energy (Eg) was evaluated on the basis of the derivative of transmittance (dT/dλ) versus wavelength (λ) model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 104 cm-1. The observed values of Eg were found to decrease generally with increasing In dopant concentration. From the figure of merit calculations a sample with 4 at.% In dopant concentration showed better optoelectronic properties.

  8. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  9. Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

    Pham, Hien Thu; Jeong, Hyundam [Chonnam National Univ., Gwangju (Korea, Republic of)

    2014-02-15

    Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide (SiO{sub 2}) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: 350 .deg. C, 400 .deg. C, 500 .deg. C, and 600 .deg. C. All samples showed semiconducting behavior and exhibited n-channel TFT{sup -} Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

  10. High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

    Asl, Hassan Zare; Rozati, Seyed Mohammad

    2018-03-01

    In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10-3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400-800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson-Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V-1 s-1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

  11. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Subrahmanyam, A [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2007-03-15

    Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

  12. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Subrahmanyam, A.; Barik, Ullash Kumar

    2007-01-01

    Indium (∼10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity ∼3.40x10 -8 ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity

  13. Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

    Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

    2014-01-01

    In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

  14. Doping of germanium telluride with bismuth tellurides

    Abrikosov, N.Kh.; Karpinskij, O.G.; Makalatiya, T.Sh.; Shelimova, L.E.

    1981-01-01

    Effect of germanium telluride doping with bismuth fellurides (Bi 2 Te 3 ; BiTe; Bi 2 Te) on phase transition temperature, lattice parameters and electrophysical properties of alloys is studied. It is shown that in alloys of GeTe-Bi 2 Te 3 (BiTe)(Bi 2 Te) cross sections solid solution of GeTe with Bi 2 Te 3 , characterized by deviation from stoichiometry, and germanium in the second phase the quantity of which increases during the transition from GeTe-Bi 2 Te 3 cross section to GeTe-Bi 2 Te are in equilibrium. Lower values of holes concentration and of electric conductivity and higher values of thermo e.m.f. coefficient in comparison with alloys of GeTe-Bi 2 Te 3 cross section with the same bismuth content are characterized for GeTe-Bi 2 Te cross section alloys. It is shown that in the range of GeTe-base solid solution the α→γ phase transformation which runs trough the two-phase region (α→γ) is observed with tellurium content increase. Extension of α-phase existence region widens with the bismuth content increase. Peculiarities of interatomic interaction in GeTe-base solid solutions with isovalent and heterovalent cation substitution are considered [ru

  15. Rise time spectroscopy in cadmium telluride detectors

    Scharager, Claude; Siffert, Paul; Carnet, Bernard; Le Meur, Roger.

    1980-11-01

    By a simultaneous analysis of rise time and pulse amplitude distributions of the signals issued from various cadmium telluride detectors, it is possible to obtain informations about surface and bulk trapping, field distribution within the detectors, as well as charge collection and transport properties. These investigations have been performed on both pure and chlorine doped and materials for various surfaces preparation conditions [fr

  16. Occurency and aqueous processing of tellurides from Sonora (Mexico)

    Aguayo, S.; Perez, E.; Ecinas, M.A.

    1996-01-01

    Tellurium production is limited mainly to that obtained from the treatment of electrolyte muds from copper refineries. however, there are several other sources from which the precious metal tellurides are potentially attractive. This work presents a review of the main localitiesin Sonora (Mexico), where tellurides have been found. In addition, based upon the physical chemistry fundamentals for tellurium and precious metal tellurides, the aqueous extraction and recovery routes are discussed. (Author) 51 refs

  17. Tellurium self-diffusion and point defects in lead telluride

    Simirskij, Yu.N.; Firsova, L.P.

    1982-01-01

    Method of radioactive indicators was used to determine factors of tellurium self-diffusion in lead telluride with different deviation of the composition from stoichiometric in the range of enrichment by tellurium. It was found that at 973 K factors of tellurium self-diffusion in lead telluride depend slightly on the vapor pressure of tellurium equilibrium with solid phase

  18. Development of planar waveguides in zinc telluride

    Valette, Serge

    1977-02-01

    Zinc telluride (ZnTe) is one of the most attractive semi-conductors for monolithic integrated optics. In this study, the general characteristics of the planar optical waveguides achieved by implantation of light ions in ZnTe are investigated. Different aspects of prism-coupling and coherent light guiding have been taken up theoretically and experimentally. Some assumptions about the physical origin of these structures are discussed in order to explain all these results and the weak losses which have been measured. [fr

  19. Mercury telluride as a zero-gap semiconductor

    Berchenko, N.N.; Pashkovskij, M.V.

    1976-01-01

    The paper presents a review of main properties of mercury telluride which is a representative of a new class of substances - gapless semiconductors. The causes leading to the appearance of a gapless state in mercury chalcogenides are considered; it is demonstrated that the main role in the formation of the inverse band structure belongs to relativistic corrections. The specific properties of mercury telluride are associated with the zero forbidden band, p-like nature of electron states of the conduction band and its nonparabolicity, resonance states of impurities and anomalies of dielectric permittivity. Conditions of forbidden band appearing in mercury telluride under the effect external factors are analyzed

  20. TIN-X

    Cannon, Daniel C; Yang, Jeremy J; Mathias, Stephen L

    2017-01-01

    between proteins and diseases, based on text mining data processed from scientific literature. In the current implementation, TIN-X supports exploration of data for G-protein coupled receptors, kinases, ion channels, and nuclear receptors. TIN-X supports browsing and navigating across proteins......Motivation: The increasing amount of peer-reviewed manuscripts requires the development of specific mining tools to facilitate the visual exploration of evidence linking diseases and proteins. Results: We developed TIN-X, the Target Importance and Novelty eXplorer, to visualize the association...

  1. Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids

    Catrangiu, Adriana-Simona; Sin, Ion [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Prioteasa, Paula [INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania); Cotarta, Adina [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Cojocaru, Anca, E-mail: a_cojocaru@chim.upb.ro [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Anicai, Liana [Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania); Visan, Teodor [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)

    2016-07-29

    Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of Sb{sub x}Te{sub y} or Cu{sub x}Te{sub y} semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb{sub 2}Te{sub 3} phase and Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, and Cu{sub 2.8}Te{sub 2} phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • Sb{sub x}Te{sub y} and Cu{sub x}Te{sub y} films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb{sub 2}Te{sub 3}, Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, Cu{sub 2.8}Te{sub 2} phases were identified in X-ray diffraction patterns.

  2. Telluride School, Telluride, Colorado solar-energy-system performance evaluation, February 1982-April 1982

    Welch, K.M.

    1982-01-01

    The Telluride School solar site is an elementary/junior-senior high school in Colorado with a passive/active hybrid solar energy system designed to supply 40% of the heating load. It is equipped with a 1428 square foot, double glazed Trombe wall, a 1392 square foot greenhouse with collection tube, and an auxiliary oil-fired boiler. Monthly performance data are tabulated for the overall system and for the Trombe wall, greenhouse, and greenhouse storage. System operation is illustrated by graphs of typical Trombe wall insolation and temperatures and typical greenhouse insolation and temperatures. (LEW)

  3. Toxicology of inorganic tin

    Burba, J.V.

    1982-01-01

    Tin(II) or stannous ion as a reducing agent is important in nuclear medicine because it is an essential component and common denominator for many in vivo radiodiagnostic agents, commonly called kits for the preparation of radiopharmaceuticals. This report is intended to alert nuclear medicine community regarding the wide range of biological effects that the stannous ion is capable of producing, and is a review of a large number of selected publications on the toxicological potential of tin(II)

  4. Layered germanium tin antimony tellurides: element distribution, nanostructures and thermoelectric properties.

    Welzmiller, Simon; Rosenthal, Tobias; Ganter, Pirmin; Neudert, Lukas; Fahrnbauer, Felix; Urban, Philipp; Stiewe, Christian; de Boor, Johannes; Oeckler, Oliver

    2014-07-21

    In the system Ge-Sn-Sb-Te, there is a complete solid solution series between GeSb2Te4 and SnSb2Te4. As Sn2Sb2Te5 does not exist, Sn can only partially replace Ge in Ge2Sb2Te5; samples with 75% or more Sn are not homogeneous. The joint refinement of high-resolution synchrotron data measured at the K-absorption edges of Sn, Sb and Te combined with data measured at off-edge wavelengths unambiguously yields the element distribution in 21R-Ge(0.6)Sn(0.4)Sb2Te4 and 9P-Ge(1.3)Sn(0.7)Sb2Te5. In both cases, Sb predominantly concentrates on the position near the van der Waals gaps between distorted rocksalt-type slabs whereas Ge prefers the position in the middle of the slabs. No significant antisite disorder is present. Comparable trends can be found in related compounds; they are due to the single-side coordination of the Te atoms at the van der Waals gap, which can be compensated more effectively by Sb(3+) due to its higher charge in comparison to Ge(2+). The structure model of 21R-Ge(0.6)Sn(0.4)Sb2Te4 was confirmed by high-resolution electron microscopy and electron diffraction. In contrast, electron diffraction patterns of 9P-Ge(1.3)Sn(0.7)Sb2Te5 reveal a significant extent of stacking disorder as evidenced by diffuse streaks along the stacking direction. The Seebeck coefficient is unaffected by the Sn substitution but the thermal conductivity drops by a factor of 2 which results in a thermoelectric figure of merit ZT = ~0.25 at 450 °C for both Ge(0.6)Sn(0.4)Sb2Te4 and Ge(1.3)Sn(0.7)Sb2Te5, which is higher than ~0.20 for unsubstituted stable layered Ge-Sb-Te compounds.

  5. Novel superstructure of the rocksalt type and element distribution in germanium tin antimony tellurides

    Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Neudert, Lukas [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Urban, Philipp [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Fitch, Andy [European Synchrotron Radiation Facility, CS40220, 38043 Grenoble Cedex 9 (France); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany)

    2014-11-15

    A superstructure of the rocksalt-type observed in quenched CVT-grown single crystals of Ge{sub 3.25(7)}Sn{sub 1.10(3)}Sb{sub 1.10(3)}Te{sub 6} was elucidated by X-ray diffraction using fourfold twinned crystals (space group P3{sup ¯}m1, a=4.280(1) Å, c=20.966(3) Å). The structure is built up of distorted rocksalt-type building blocks typical for long-range ordered GST materials and substitution variants thereof. In contrast to those phases, an exclusive ABC-type cubic stacking sequence of the Te-atom layers is present. High-resolution electron microscopy reveals spheroidal domains with this structure (average diameter 25 nm) whose stacking direction is perpendicular to the 〈1 1 1〉 directions of the basic rocksalt-type structure. Additional slab-like domains with a lateral extension up to 1 µm occasionally result in a hierarchical structure motif. Due to the similar electron counts of the elements involved, resonant diffraction was used in order to elucidate the element distribution in rocksalt-type building blocks of the stable layered compound 39R-Ge{sub 3}SnSb{sub 2}Te{sub 7} (R3{sup ¯}m, a=4.24990(4) Å, c=73.4677(9) Å). Sb tends to occupy the atom site close to the van der Waals gaps while Ge concentrates in the center of the building blocks. - Graphical abstract: High-resolution transmission electron micrograph, SAED pattern and reciprocal lattice section of X-ray single crystal data of Ge{sub 3.25}Sn{sub 1.1}Sb{sub 1.1}Te{sub 6} with an 11P-type superstructure of the rocksalt type. - Highlights: • A novel superstructure of the rocksalt-type in the system Ge–Sn–Sb–Te is elucidated. • It combines the cubic stacking of the HT phase with building blocks of the RT phase. • It indicates the ordering mechanism during the phase transition of GST materials. • A hierarchical structure motif is promising with respect to the reduction of κ{sub L}. • Resonant diffraction reveals the element distribution in 39R-Ge{sub 3}SnSb{sub 2}Te{sub 7}.

  6. Preparation of lead-tin telluride Pbsub(1-x)Snsub(x)Te at low temperature

    Gafni, G.

    1977-01-01

    A new method for the preparation of Pbsub(1-x)Snsub(x)Te at low temperature is described. The experiments were carried out in the concentration range 0.1 2 as solvent. The alloy obtained was a polycrystallized powder of 20-100 *mm. The material prepared in this way can be used as a source for the growth of single crystals for the manufacture of electro-optical devices. (B.G.)

  7. Low ohmic multilayer contacts in lead-tin-telluride diode lasers

    Herrmann, K.; Sumpf, B.; Boehme, D.; Hannemann, M.

    1983-01-01

    The preparation and the influence of low ohmic multilayer thin film contacts of lead-salt homo- and heterolasers on the degradation of lasing parameters during recycling processes between low working temperatures and room temperatures storage are described and discussed in detail. (author)

  8. Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

    Ganguly, Shreyashi; Zhou, Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

    2011-12-01

    Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2- xSb xTe 3) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2- xSb xTe 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.

  9. Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

    Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

    2017-08-01

    Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

  10. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  11. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

    Swati Arora

    2017-01-01

    Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

  12. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators

    Schmitz, Andreas

    2013-01-01

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb 1-x Ca x Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric properties

  13. Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

    Ganguly, Shreyashi; Zhou Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

    2011-01-01

    Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2−x Sb x Te 3 ) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2−x Sb x Te 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties. - Graphical abstract: PbTe nanoparticles introduced into p-type Bi 2 Te 3 by incipient wetness results in decreased lattice thermal conductivity, but also acts as an electronic dopant, resulting in an overall decrease in thermoelectric performance. Highlights: ► Composites of PbTe nanoparticles in Bi 2−x Sb x Te 3 were formed by incipient wetness. ► PbTe nanoparticles leads to decreased κ l , consistent with phonon scattering. ► PbTe nanoparticles lead to decreased S and ρ, due to increased carriers. ► Collateral doping from PbTe leads to decreased ZT with increasing concentration. ► Immiscible systems are preferred for improved ZT.

  14. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    Yong, T.Y.; Tou, T.Y.; Yow, H.K.; Safran, G.

    2008-01-01

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O 2 ), nitrogen (N 2 ) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to -4 Ω cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O 2 and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N 2 and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N 2 but polycrystalline for using O 2 and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O 2 and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO

  15. High-temperature thermoelectric behavior of lead telluride

    The central problem in thermoelectric material research is the selection of ... temperature range (400–1000 K), and bismuth telluride-based materials .... parent from the results that band non-parabolicity has a significant effect on the .... M P Singh thankfully acknowledges financial assistance from the Council of Scien-.

  16. Phase transition of bismuth telluride thin films grown by MBE

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  17. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    Aktakka, Ethem Erkan; Ghafouri, Niloufar; Smith, Casey; Peterson, Rebecca Lorenz; Hussain, Muhammad Mustafa; Najafi, Khalil

    2013-01-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning

  18. About thermo-electric properties of bismuth telluride doped by gadolinium

    Akperov, M.M.; Ismailov, Sh.S.; Shukyurova, A.A.

    2004-01-01

    Results of study of the Gd impurities effect on the bismuth telluride thermo-electric properties are presented. The experiment was carried out within the temperature range T=300-700 K. It is determined, that at temperature increase the energy level is appreciably closing up to bismuth telluride forbidden zone which makes up 0.16-0.24 eV. Such anomalous energy properties of gadolinium in telluride affect on material thermoelectric properties

  19. Gamma-ray peak shapes from cadmium zinc telluride detectors

    Namboodiri, M.N.; Lavietes, A.D.; McQuaid, J.H.

    1996-09-01

    We report the results of a study of the peak shapes in the gamma spectra measured using several 5 x 5 x 5 mm{sup 3} cadmium zinc telluride (CZT) detectors. A simple parameterization involving a Gaussian and an exponential low energy tail describes the peak shapes sell. We present the variation of the parameters with gamma energy. This type of information is very useful in the analysis of complex gamma spectra consisting of many peaks.

  20. Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

    Vydyanath, H. R.

    1981-01-01

    Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

  1. Superconducting tin core fiber

    Homa, Daniel; Liang, Yongxuan; Hill, Cary; Kaur, Gurbinder; Pickrell, Gary

    2015-01-01

    In this study, we demonstrated superconductivity in a fiber with a tin core and fused silica cladding. The fibers were fabricated via a modified melt-draw technique and maintained core diameters ranging from 50-300 microns and overall diameters of 125-800 microns. Superconductivity of this fiber design was validated via the traditional four-probe test method in a bath of liquid helium at temperatures on the order of 3.8 K. The synthesis route and fiber design are perquisites to ongoing research dedicated all-fiber optoelectronics and the relationships between superconductivity and the material structures, as well as corresponding fabrication techniques. (orig.)

  2. Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

    Kim, Hyun-Jung (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Park, Yeonjoon (Inventor); Lee, Kunik (Inventor)

    2014-01-01

    Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

  3. Layered tin dioxide microrods

    Duan Junhong; Huang Hongbo; Gong Jiangfeng; Zhao Xiaoning; Cheng Guangxu; Yang Shaoguang

    2007-01-01

    Single-crystalline layered SnO 2 microrods were synthesized by a simple tin-water reaction at 900 deg. C. The structural and optical properties of the sample were characterized by x-ray powder diffraction, energy-dispersive x-ray spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, Raman scattering and photoluminescence (PL) spectroscopy. High resolution transmission electron microscopy studies and selected area electron diffraction patterns revealed that the layered SnO 2 microrods are single crystalline and their growth direction is along [1 1 0]. The growth mechanism of the microrods was proposed based on SEM, TEM characterization and thermodynamic analysis. It is deduced that the layered microrods grow by the stacking of SnO 2 sheets with a (1 1 0) surface in a vapour-liquid-solid process. Three emission peaks at 523, 569 and 626 nm were detected in room-temperature PL measurements

  4. Electrical properties of cadmium telluride films doped with antimony

    Atdaev, B.S.; Garyagdyev, G.; Grin', V.F.; Noskov, A.I.

    1989-01-01

    Effect of cadmium telluride doping with antimony on electric and photoelectric properties is investigated. Temperature dependence of dark (σ d ) and photoconductivity (σ p ) during excitation from the range of proper absorption in the temperature range 77-300 K and spectral distribution of photoconductivity at 300 K are investigated. It is shown that in the process of doping antimony diffusses intensively over CdTe grain boundaries, decreasing potential barriers between them and due to diffusion into CdTe grains it changes their electrical properties. The acceptor character of antimony impurity can be caused by antimony diffusion into tellurium sublattice owing to proximity of their ionic and covalent radii

  5. XAFS studies of nickel-doped lead telluride

    Radisavljevic, Ivana; Novakovic, Nikola; Ivanovic, Nenad; Romcevic, Nebojsa; Manasijevic, Miodrag; Mahnke, Heinz-Eberhard

    2009-01-01

    The problem of impurities and defect states in lead telluride-based semiconductors is of crucial importance for their practical applications. X-ray absorption fine structure (XAFS) techniques are capable to address some of the key issues regarding impurities position, their valent state, as well as the local structural changes of the host lattice in the immediate surrounding of the impurity atoms. In this paper we present the results of the Ni K-absorption edge XAFS studies of Ni-doped PbTe at different temperatures. Analysis of near edge and extended XAFS regions of the measured spectra provided information about exact local environment and lattice ordering around Ni atoms.

  6. Hydrolysis of bis(dimethylamido)tin to tin (II) oxyhydroxide and its selective transformation into tin (II) or tin (IV) oxide

    Khanderi, Jayaprakash; Shi, Lei; Rothenberger, Alexander

    2015-01-01

    Sn6O4(OH)4, a hydrolysis product of Sn(NMe2)2, is transformed to tin (II) or tin (IV) oxide by solid and solution phase processing. Tin (II) oxide is formed by heating Sn6O4(OH)4 at ≤200 °C in air or under inert atmosphere. Tin (IV) oxide

  7. Application of cadmium telluride detectors to high energy computed tomography

    Glasser, F.; Thomas, G.; Cuzin, M.; Verger, L.

    1991-01-01

    15 years ago, Cadmium Telluride detectors have been investigated in our laboratory as possible detectors for medical scanners [1]. Today most of these machines are using high pressure Xenon gas as multicells detectors, BGO or CdWO 4 scintillators for industrial computerized tomography. Xenon gas detectors are well suited for detection of 100 KeV X-rays and enables to build 1000 cells homogeneous detector with a dynamic range of 3 decades. BGO and CdWO 4 scintillators, associated with photomultipliers or photodiodes are used for higher energy (400 KeV). They present a low afterglow and a dynamic range of 4 to 5 decades. Non destructive testing of very absorbing objects (eg 2 m diameter solid rocket motor) by X-ray tomography requires much higher energy X-rays (16 MeV) and doses up to 12000 rads/min at 1 meter. For this application Cadmium Telluride detectors operating as photoconductors are well suited. A prototype of tomograph machine, able to scan 0.5 m diameter high density objects has been realized with 25 CdTe detectors (25x15x0.8 mm 3 ). It produces good quality 1024x1024 tomographic images

  8. Kelvin probe studies of cesium telluride photocathode for AWA photoinjector

    Wisniewski, Eric E., E-mail: ewisniew@anl.gov [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Velazquez, Daniel [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Yusof, Zikri, E-mail: zyusof@hawk.iit.edu [High Energy Physics Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States); Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Spentzouris, Linda; Terry, Jeff [Physics Department, Illinois Institute of Technology, 3300 South Federal Street, Chicago, IL 60616 (United States); Sarkar, Tapash J. [Rice University, 6100 Main, Houston, TX 77005 (United States); Harkay, Katherine [Accelerator Science Division, Argonne National Laboratory, 9700 S. Cass, Lemont, IL 60439 (United States)

    2013-05-21

    Cesium telluride is an important photocathode as an electron source for particle accelerators. It has a relatively high quantum efficiency (>1%), is sufficiently robust in a photoinjector, and has a long lifetime. This photocathode is grown in-house for a new Argonne Wakefield Accelerator (AWA) beamline to produce high charge per bunch (≈50nC) in a long bunch train. Here, we present a study of the work function of cesium telluride photocathode using the Kelvin probe technique. The study includes an investigation of the correlation between the quantum efficiency and the work function, the effect of photocathode aging, the effect of UV exposure on the work function, and the evolution of the work function during and after photocathode rejuvenation via heating. -- Highlights: ► The correlation between Quantum Efficiency (QE) and work function. ► How QE and work function evolve together. ► Rejuvenation of the photocathode via heating and the effect on work function. ► The effects on the work function due to exposure to UV light.

  9. Magneto-photoconductivity of three dimensional topological insulator bismuth telluride

    Cao, Bingchen; Eginligil, Mustafa; Yu, Ting

    2018-03-01

    Magnetic field dependence of the photocurrent in a 3D topological insulator is studied. Among the 3D topological insulators bismuth telluride has unique hexagonal warping and spin texture which has been studied by photoemission, scanning tunnelling microscopy and transport. Here, we report on low temperature magneto-photoconductivity, up to 7 T, of two metallic bismuth telluride topological insulator samples with 68 and 110 nm thicknesses excited by 2.33 eV photon energy along the magnetic field perpendicular to the sample plane. At 4 K, both samples exhibit negative magneto-photoconductance below 4 T, which is as a result of weak-antilocalization of Dirac fermions similar to the previous observations in electrical transport. However the thinner sample shows positive magneto-photoconductance above 4 T. This can be attributed to the coupling of surface states. On the other hand, the thicker sample shows no positive magneto-photoconductance up to 7 T since there is only one surface state at play. By fitting the magneto-photoconductivity data of the thicker sample to the localization formula, we obtain weak antilocalization behaviour at 4, 10, and 20 K, as expected; however, weak localization behaviour at 30 K, which is a sign of surface states masked by bulk states. Also, from the temperature dependence of phase coherence length bulk carrier-carrier interaction is identified separately from the surface states. Therefore, it is possible to distinguish surface states by magneto-photoconductivity at low temperature, even in metallic samples.

  10. Cadmium Telluride-Titanium Dioxide Nanocomposite for Photodegradation of Organic Substance.

    Ontam, Areeporn; Khaorapapong, Nithima; Ogawa, Makoto

    2015-12-01

    Cadmium telluride-titanium dioxide nanocomposite was prepared by hydrothermal reaction of sol-gel derived titanium dioxide and organically modified cadmium telluride. The crystallinity of titanium dioxide in the nanocomposite was higher than that of pure titanium dioxide obtained by the reaction under the same temperature and pressure conditions, showing that cadmium telluride induced the crystallization of titanium dioxide. Diffuse reflectance spectrum of the nanocomposite showed the higher absorption efficiency in the UV-visible region due to band-gap excitation of titanium dioxide. The nanocomposite significantly showed the improvement of photocatalytic activity for 4-chlorophenol with UV light.

  11. Electrochemical Studies of Lead Telluride Behavior in Acidic Nitrate Solutions

    Rudnik E.

    2015-04-01

    Full Text Available Electrochemistry of lead telluride stationary electrode was studied in nitric acid solutions of pH 1.5-3.0. E-pH diagram for Pb-Te-H2O system was calculated. Results of cyclic voltammetry of Pb, Te and PbTe were discussed in correlation with thermodynamic predictions. Anodic dissolution of PbTe electrode at potential approx. -100÷50 mV (SCE resulted in tellurium formation, while above 300 mV TeO2 was mainly produced. The latter could dissolve to HTeO+2 under acidic electrolyte, but it was inhibited by increased pH of the bath.

  12. Effect of thallium impurity on hole scattering in lead telluride

    Kajdanov, V.I.; Nemov, S.A.

    1981-01-01

    Hole mobility in PbTe monocrystalline specimens in the temperature range from 4.2 to 300 K has been investigated. Detected is a sharp increase in scattering cross section of light and heavy holes in the specimens having the Hall hole concentration p approximately (5+-9)x10 19 cm -3 explained by resonant scattering into a band of quasilocal states of thallium located lower than the ceiling of heavy carrier zone by 0.01+-0.01 eV. Very large differences in resonant scattering of current carriers into the quasilocal states of In and Tl in PbTe result from the inertial polarizability of a crystal. The same mechanism is used to explain long-lived relaxation of zone electron concentration in lead telluride and Pbsub(1-x)Snsub(x)Te doped with indium [ru

  13. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  14. Megapixel mercury cadmium telluride focal plane arrays for infrared imaging out to 12 microns, Phase I

    National Aeronautics and Space Administration — We propose the fabrication of large format, long wave infrared (LWIR) mercury cadmium telluride (HgCdTe or MCT) detector arrays where the cutoff wavelength is...

  15. Measuring the sustainability of tin in China.

    Yang, Congren; Tan, Quanyin; Zeng, Xianlai; Zhang, Yuping; Wang, Zhishi; Li, Jinhui

    2018-09-01

    Tin is a component of many items used in daily activities, including solder in consumer electronics, tin can containing food and beverages, polyvinyl chloride stabilizers in construction products, catalysts in industrial processes, etc. China is the largest producer and consumer of refined tin, and more than 60% of this refined tin is applied in the electronics sector as solder. China is the leader in global economic growth; simultaneously, China is also a major producer and consumer of electrical and electronic equipment (EEE). Thus, future tin supply and demand in China are forecasted, based on the gross domestic product per capita and the average consumption of refined tin in past five years. Current tin reserves and identified resources in China can meet the future two decades of mine production, but import of tin will also be critical for China's future tin consumption. However, there will be a lot of uncertainty for import of tin from other countries. At the same time, virgin mining of geological ores is a process of high energy consumption and destruction of the natural environment. Hence recycling tin from Sn-bearing secondary resources like tailings and waste electrical and electronic equipment (WEEE) can not only address the shortage of tin mineral resources, but also save energy and protect the ecological environment. Copyright © 2018 Elsevier B.V. All rights reserved.

  16. International strategic minerals inventory summary report; tin

    Sutphin, D.M.; Sabin, A.E.; Reed, B.L.

    1990-01-01

    The International Strategic Minerals Inventory tin inventory contains records for 56 major tin deposits and districts in 21 countries. These countries accounted for 98 percent of the 10 million metric tons of tin produced in the period 1934-87. Tin is a good alloying metal and is generally nontoxic, and its chief uses are as tinplate for tin cans and as solder in electronics. The 56 locations consist of 39 lode deposits and 17 placers and contain almost 7.5 million metric tons of tin in identified economic resources (R1E) and another 1.5 million metric tons of tin in other resource categories. Most of these resources are in major deposits that have been known for over a hundred years. Lode deposits account for 44 percent of the R1E and 87 percent of the resources in other categories. Placer deposits make up the remainder. Low-income and middle-income countries, including Bolivia and Brazil and countries along the Southeast Asian Tin Belt such as Malaysia, Thailand, and Indonesia account for 91 percent of the R1E resources of tin and for 61 percent of resources in other categories. The United States has less than 0.05 percent of the world's tin R1E in major deposits. Available data suggest that the Soviet Union may have about 4 percent of resources in this category. The industrial market economy countries of the United States, Japan, Federal Republic of Germany, and the United Kingdom are major consumers of tin, whereas the major tin-producing countries generally consume little tin. The Soviet Union and China are both major producers and consumers of tin. At the end of World War II, the four largest tin-producing countries (Bolivia, the Belgian Congo (Zaire), Nigeria, and Malaysia) produced over 80 percent of the world's tin. In 1986, the portion of production from the four largest producers (Malaysia, Brazil, Soviet Union, Indonesia) declined to about 55 percent, while the price of tin rose from about $1,500 to $18,000 per metric ton. In response to tin shortages

  17. Chemistry of tin compounds and environment

    Ali, S.; Mazhar, M.; Mahmood, S.; Bhatti, M.H.; Chaudhary, M.A.

    1997-01-01

    Of the large volume of tin compounds reported in the literature, possible only 100 are commercially important. Tin compounds are a wide variety of purposes such as catalysts, stabilizers for many materials including polymer, biocidal agents, bactericides, insecticides, fungicides, wood preservatives, acaricides and anti fouling agents in paints, anticancer and antitumour agents, ceramic opacifiers, as textile additives, in metal finishing operations, as food additives and in electro conductive coating. All these applications make the environment much exposed to tin contamination. The application of organotin compounds as biocides account for about 30% of total tin consumption suggesting that the main environmental effects are likely to originate from this sector. Diorgano tins and mono-organo tins are used mainly in plastic industry which is the next big source for environmental pollution. In this presentation all environmental aspects of the use of tin compounds and the recommended preventive measures are discussed. (author)

  18. The Moessbauer effect in binary tin chalcogenides of tin 119

    Ortalli, I.; Fano, V.

    1975-01-01

    The values of the isomer shift, quadrupole splitting, Moessbauer coefficient, Debye temperature for the tin chalcogenides SnS. SnSe, SnTe are tabulated for the temperatures 80 and 300 K. Temperature dependences of the Moessbauer coefficient and of the effective Debye temperature for SnS, SnSe and SnTe in a temperature range of 78 to 300 K are presented. (Z.S.)

  19. A cadmium-zinc-telluride crystal array spectrometer

    McHugh, H. R.; Quam, W.; DeVore, T.; Vogle, R.; Weslowski, J.

    2003-01-01

    This paper describes a gamma detector employing an array of eight cadmium-zinc-telluride (CZT) crystals configured as a high resolution gamma ray spectrometer. This detector is part of a more complex instrument that identifies the isotope,displays this information, and records the gamma spectrum. Various alarms and other operator features are incorporated in this battery operated rugged instrument. The CZT detector is the key component of this instrument and will be described in detail in this paper. We have made extensive spectral measurements of the usual laboratory gamma sources, common medical isotopes, and various Special Nuclear Materials (SNM) with this detector. Some of these data will be presented as spectra. We will also present energy resolution and detection efficiency for the basic 8-crystal array. Additional data will also be presented for a 32-crystal array. The basic 8-crystal array development was completed two years ago, and the system electronic design has been imp roved recently. This has resulted in significantly improved noise performance. We expect to have a much smaller detector package, using 8 crystals, in a few months. This package will use flip-chip packaging to reduce the electronics physical size by a factor of 5

  20. Preliminary uranium enrichment analysis results using cadmium zinc telluride detectors

    Lavietes, A.D.; McQuaid, J.H.; Paulus, T.J.

    1995-01-01

    Lawrence Livermore National Laboratory (LLNL) and EG ampersand G ORTEC have jointly developed a portable ambient-temperature detection system that can be used in a number of application scenarios. The detection system uses a planar cadmium zinc telluride (CZT) detector with custom-designed detector support electronics developed at LLNL and is based on the recently released MicroNOMAD multichannel analyzer (MCA) produced by ORTEC. Spectral analysis is performed using software developed at LLNL that was originally designed for use with high-purity germanium (HPGe) detector systems. In one application, the CZT detection system determines uranium enrichments ranging from less than 3% to over 75% to within accuracies of 20%. The analysis was performed using sample sizes of 200 g or larger and acquisition times of 30 min. The authors have demonstrated the capabilities of this system by analyzing the spectra gathered by the CZT detection system from uranium sources of several enrichments. These experiments demonstrate that current CZT detectors can, in some cases, approach performance criteria that were previously the exclusive domain of larger HPGe detector systems

  1. Cadmium zinc telluride as a mid-infrared variable retarder

    FitzGerald, William; Taherion, Saeid; Kumar, F. Joseph; Giles, David; Hore, Dennis

    2018-04-01

    The electro-optic behavior of cadmium zinc telluride is examined in the mid-infrared region between 3 and 11 μm, for applied DC field strengths of up to 106 V/m. The measurements performed here include full characterization of the polarization state of the transmitted light by means of the Stokes vector. We demonstrate the suitability of this material for DC variable retarder applications such as those achieved by quarter- or half-wave retardation. A comparison of two different metallic coatings for electrodes, gold and indium, reveals important differences in performance that are attributed to the homogeneity of the field through the bulk of the crystal. We illustrate that, in the case of both metals, the same electro-optic coefficients are measured, but regions of higher and lower retardation result in significant depolarization in the case of gold. Such depolarization may adversely affect the contrast ratio in a light valve, or increase the voltage necessary for the operation of an arbitrary polarization state generator.

  2. Theoretical study of bismuth-doped cadmium telluride

    Menendez-Proupin, E.; Rios-Gonzalez, J. A.; Pena, J. L.

    Cadmium telluride heavily doped with bismuth has been proposed as an absorber with an intermediate band for solar cells. Increase in the photocurrent has been shown recently, although the overall cell efficiency has not improved. In this work, we study the electronic structure and the formation energies of the defects associated to bismuth impurities. We have performed electronic structure calculations within generalized density functional theory, using the exchange-correlation functional HSE(w) , where the range-separation parameter w has been tuned to reproduce the CdTe bandgap. Improving upon previous reports, we have included the spin-orbit interaction, which modifies the structure of the valence band and the energy levels of bismuth. We have found that interstitial Bi (Bii) tends to occupy Cd vacancies, cadmium substitution (BiCd) creates single donor level, while tellurium substitution (BiTe) is a shallow single acceptor. We investigate the interaction between these point defects and how can they be combined to create a partially filled intermediate band. Supported by FONDECYT Grant 1130437, CONACYT-SENER SUSTENTABILIDAD ENERGETICA/project CeMIE-Sol PY-207450/25 and PY-207450/26. JARG acknowledges CONACYT fellowship for research visit. Powered@NLHPC (ECM-02).

  3. Niobium and zirconium telluride thin films prepared by sputtering

    Kassem, M.; Pailharey, D.; Mathey, Y.

    2000-01-01

    A versatile procedure of sputter deposition, well adapted for getting a large of Te/M ratios (with M = Zr or Nb), has led to the synthesis of several highly anisotropic zirconium and niobium poly tellurides in thin film form. Upon tuning the two key parameters of the process, i.e., the Te percentage in the target and the substrate temperature during the deposition, preparation of systems ranging from ZrTe 0 .72 to ZrTe 6 .7, on the one hand, and from NbTe 1 .28 to NbTe 7 .84, on the other, has been achieved. Besides their amorphous or crystalline (with or without preferential orientations) behavior and their relationship to known structural types, the most striking feature of these films is their large departure from the stoichiometry of the bulk Mte x reference compounds. This peculiarity, together with the possible changes of composition under annealing, are described and interpreted in terms of variable of Te and M atoms trapped or intercalated within the parent structures. (author)

  4. Precision timing detectors with cadmium-telluride sensor

    Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

    2017-09-01

    Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

  5. Selective and low temperature transition metal intercalation in layered tellurides

    Yajima, Takeshi; Koshiko, Masaki; Zhang, Yaoqing; Oguchi, Tamio; Yu, Wen; Kato, Daichi; Kobayashi, Yoji; Orikasa, Yuki; Yamamoto, Takafumi; Uchimoto, Yoshiharu; Green, Mark A.; Kageyama, Hiroshi

    2016-01-01

    Layered materials embrace rich intercalation reactions to accommodate high concentrations of foreign species within their structures, and find many applications spanning from energy storage, ion exchange to secondary batteries. Light alkali metals are generally most easily intercalated due to their light mass, high charge/volume ratio and in many cases strong reducing properties. An evolving area of materials chemistry, however, is to capture metals selectively, which is of technological and environmental significance but rather unexplored. Here we show that the layered telluride T2PTe2 (T=Ti, Zr) displays exclusive insertion of transition metals (for example, Cd, Zn) as opposed to alkali cations, with tetrahedral coordination preference to tellurium. Interestingly, the intercalation reactions proceed in solid state and at surprisingly low temperatures (for example, 80 °C for cadmium in Ti2PTe2). The current method of controlling selectivity provides opportunities in the search for new materials for various applications that used to be possible only in a liquid. PMID:27966540

  6. Development of a cadmium telluride pixel detector for astrophysical applications

    Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

    2009-08-01

    We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

  7. Studies on Cementation of Tin on Copper and Tin Stripping from Copper Substrate

    Rudnik E.

    2016-06-01

    Full Text Available Cementation of tin on copper in acid chloride-thiourea solutions leads to the formation of porous layers with a thickness dependent on the immersion time. The process occurs via Sn(II-Cu(I mechanism. Chemical stripping of tin was carried out in alkaline and acid solutions in the presence of oxidizing agents. It resulted in the dissolution of metallic tin, but refractory Cu3Sn phase remained on the copper surface. Electrochemical tin stripping allows complete tin removal from the copper substrate, but porosity and complex phase composition of the tin coating do not allow monitoring the process in unambiguous way.

  8. Tinned fish with radioprotective ingredients

    Chaneva, M.; Minkova, M.; Zajko, G.

    1992-01-01

    A survey of food ingredients with pronounced radioprotective properties is made. The protective effect of fish proteins and some vegetable oils is mentioned. As suitable additives to tinned fish during the manufacturing process the β carotene, anthocyans and apple pectin are pointed out. β-carotene possesses the ability to absorb radiations. It can be added either as a pure crystalline substance or dissolved in the vegetable oil. Anthocyans have an antimutagen effect due to their ability to inhibit free radical reactions. Some vegetable polyphenols can be added with wine. The Bulgarian anthocyan concentrate Enobagrin (made by extraction of marc and wine) is also proposed. A combination of Enobagrin, β-tocopherol and pyracetam decreases the postradiation hypoplasia. Special attention is paid to the importance of the pectin in intoxication with heavy radioactive metals. It is thought that the pectin forms unsoluble complex compounds with Fe, Zn, Cd, Co, Pb, Hg, Mn, Cr. The binding energy depends on the available carboxylic groups. Some experiments showing the interaction of the pectin with 90 Sr are mentioned. In the tinned fish the pectin can be introduced with tomato paste. Vegetables rich in pectin and carotene - carrots and tomato concentrate - can be added as well. Proposed enriched tinned fish can be used as a preventive radioprotective food under conditions of increased radiation risk. 19 refs

  9. Indium doped niobium phosphates as intermediate temperature proton conductors

    Huang, Yunjie; Li, Qingfeng; Anfimova, Tatiana

    2013-01-01

    contributed to the anhydrous proton conductivity. The Nb0.9In0.1 phosphate exhibited a proton conductivity of five times higher than that of the un-doped analog at 250 °C. The conductivity was stabilized at a level of above 0.02 S cm−1 under dry atmosphere at 250 °C during the stability evaluation for 3 days....

  10. Special features of self-compensation of halogen donor action in lead telluride

    Kajdanov, V.I.; Nemov, S.A.; Ravich, Yu.I.; Dereza, A.Yu.

    1985-01-01

    Specific features of self-compensation of halogen donor action in lead telluride are investigasted. Lead telluride samples with chlorine additions (with tellurium excess) and, besides, with bromine- and iodine additions were studied in order to reveal general regularities in alloyind with all halogen donor impurities. Experimental dependences of the difference between the electron and hole concentrations (n-p) in PbTe as a function of an amount of introduced halogen impurities (Ni) are presented for samples with a maximum compensation at 295 K. General features of the n-p=f(Ni) dependence are presented for all halogens. The hypothesis on the kinetic mechanism of increasing the efficiency of self-compensation of halogen donor action in lead telluride is suggested

  11. Process for obtaining oxygen doped zinc telluride monocrystals and scintillator crystals obtained by this process

    Schneider, Maurice; Moreau, Roland; D'Haenen, J.-P.; Merenda, Pierre.

    1976-01-01

    A process is described for obtaining oxygen doped zinc telluride monocrystals, for use as scintillator crystals for ionising radiation detectors. The following operations are carried out in succession: one or several zinc telluride crystals are introduced into a silica ampoule together with a ternary mixture of zinc tellurium and oxygen, as an oxide or hydroxide of these elements; the ampoule is pumped down to a high vacuum and sealed; the sealed ampoule containing the mixture and monocrystals is placed in a kiln and brought to a uniform temperature sufficient to make the mixture three-phased, depending on its composition; the zinc telluride crystalline compound remains solid; the ampoule is then tempered to bring it quickly back to ambient temperature [fr

  12. Current transport mechanisms in mercury cadmium telluride diode

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  13. Dissolution kinetics of lead telluride in alkali solutions of hydrogen peroxide

    Danilova, M.G.; Sveshnikova, L.L.; Stavitskaya, T.A.; Repinskij, S.M.

    1991-01-01

    Dissolution kinetics of lead telluride in alkali solutions of hydrogen peroxide was investigated. Dependences of change of PbTe dissolution rate on concentration of hydrogen peroxide and alkali in the solution were obtained. It is shown that dissolution rate of lead telluride is affected by dissolution rate of lead oxide, representing the product of ReTe dissolution. The obtained regularities can be explained by change of solution structure with increase of KOH concentration and by the state of hydrogen peroxide in the solution

  14. Simulation of core-level binding energy shifts in germanium-doped lead telluride crystals

    Zyubin, A.S.; Dedyulin, S.N.; Yashina, L.V.; Shtanov, V.I.

    2007-01-01

    To simulate the changes in core-level binding energies in germanium-doped lead telluride, cluster calculations of the changes in the electrostatic potential at the corresponding centers have been performed. Different locations of the Ge atom in the crystal bulk have been considered: near vacancies, near another dopant site, and near the surface. For calculating the potential in the clusters that model the bulk and the surface of the lead telluride crystal (c-PbTe), the electron density obtained in the framework of the Hartree-Fock and hybrid density functional theory (DFT) methods has been used [ru

  15. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

    Aktakka, Ethem Erkan

    2013-10-01

    This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.

  16. Processing and Characterization of Thin Cadmium Telluride Solar Cells

    Wojtowicz, Anna

    Cadmium telluride (CdTe) has the highest theoretical limit to conversion efficiency of single-junction photovoltaic (PV) technologies today. However, despite a maximum theoretical open-circuit voltage of 1.20 V, record devices have historically had voltages pinned around only 900 mV. Voltage losses due to high recombination rates remains to be the most complex hurdle to CdTe technology today, and the subject of on-going research in the physics PV group at Colorado State University. In this work, an ultrathin CdTe device architecture is proposed in an effort to reduce bulk recombination and boost voltages. By thinning the CdTe layer, a device's internal electric field extends fully towards the back contact. This quickly separates electrons-hole pairs throughout the bulk of the device and reduces overall recombination. Despite this advantage, very thin CdTe layers also present a unique set of optical and electrical challenges which result in performance losses not as prevalent in thicker devices. When fabricating CdTe solar cells, post-deposition treatments applied to the absorber layer are a critical step for achieving high efficiency devices. Exposure of the polycrystalline CdTe film to a chlorine species encourages the passivation of dangling bonds and larger grain formation, while copper-doping improves device uniformity and voltages. This work focuses on experiments conducted via close-space sublimation to optimize CdCl2 and CuCl treatments for thin CdTe solar cells. Sweeps of both exposure and anneal time were performed for both post-deposition treatments on CdTe devices with 1.0 mum absorber layers. The results demonstrate that thin CdTe devices require substantially less post-deposition processing than standard thicker devices as expected. Additionally, the effects of CdTe growth temperature on thin devices is briefly investigated. The results suggest that higher growth temperatures lead to both electrical and stoichiometric changes in CdTe closely associated

  17. Thin-film cadmium telluride photovoltaics: ES and H issues, solutions, and perspectives

    Zweibel, K.; Moskowitz, P.; Fthenakis, V.

    1998-02-01

    Photovoltaics (PV) is a growing business worldwide, with new technologies evolving towards potentially large-volume production. PV use produces no emissions, thus offsetting many potential environmental problems. However, the new PV technologies also bring unfamiliar environment, safety, and health (ES and H) challenges that require innovative solutions. This is a summary of the issues, solutions, and perspectives associated with the use of cadmium in one of the new and important PV technologies: thin-film, cadmium telluride (CdTe) PV, which is being developed and commercialized by several companies including Solar Cells Inc. (Toledo, Ohio), BP Solar (Fairfield, California), and Matsushita (Japan). The principal ES and H issue for thin-film cadmium telluride PV is the potential introduction of cadmium--a toxic heavy metal--into the air or water. The amount of cadmium in thin-film PV, however, is quite small--one nickel cadmium flashlight battery has about as much cadmium (7 g) as a square meter of PV module using current technology--and a typical cordless power tool will have 5--10 batteries. CdTe modules are also very well sealed, limiting the chance of release. Nonetheless, minimizing the amount of cadmium in cadmium telluride modules and preventing the introduction of that cadmium into the environment is a top priority for National Renewable Energy Laboratory researchers and cadmium telluride PV manufacturers

  18. Structural studies of supported tin catalysts

    Nava, Noel; Viveros, Tomás

    1999-11-01

    Tin oxide was supported on aluminium oxide, titanium oxide, magnesium oxide and silicon oxide, and the resulting interactions between the components in the prepared samples and after reduction were characterized by Mössbauer spectroscopy. It was observed that in the oxide state, tin is present as SnO2 on alumina, magnesia and silica, but on titania tin occupies Ti sites in the structure. After hydrogen treatment at high temperatures, tin is reduced from Sn(4) to Sn(2) on alumina and titania; it is reduced from Sn(4) to Sn(0) on silica, and is practically not reduced on magnesia. These results reveal the degree of interaction between tin and the different supports studied.

  19. Structural studies of supported tin catalysts

    Nava, Noel; Viveros, Tomas

    1999-01-01

    Tin oxide was supported on aluminium oxide, titanium oxide, magnesium oxide and silicon oxide, and the resulting interactions between the components in the prepared samples and after reduction were characterized by Moessbauer spectroscopy. It was observed that in the oxide state, tin is present as SnO 2 on alumina, magnesia and silica, but on titania tin occupies Ti sites in the structure. After hydrogen treatment at high temperatures, tin is reduced from Sn(4) to Sn(2) on alumina and titania; it is reduced from Sn(4) to Sn(0) on silica, and is practically not reduced on magnesia. These results reveal the degree of interaction between tin and the different supports studied

  20. On the electrochemistry of tin oxide coated tin electrodes in lithium-ion batteries

    Böhme, Solveig; Edström, Kristina; Nyholm, Leif

    2015-01-01

    As tin based electrodes are of significant interest in the development of improved lithium-ion batteries it is important to understand the associated electrochemical reactions. In this work it is shown that the electrochemical behavior of SnO_2 coated tin electrodes can be described based on the SnO_2 and SnO conversion reactions, the lithium tin alloy formation and the oxidation of tin generating SnF_2. The CV, XPS and SEM data, obtained for electrodeposited tin crystals on gold substrates, demonstrates that the capacity loss often observed for SnO_2 is caused by the reformed SnO_2 layer serving as a passivating layer protecting the remaining tin. Capacities corresponding up to about 80 % of the initial SnO_2 capacity could, however, be obtained by cycling to 3.5 V vs. Li"+/Li. It is also shown that the oxidation of the lithium tin alloy is hindered by the rate of the diffusion of lithium through a layer of tin with increasing thickness and that the irreversible oxidation of tin to SnF_2 at potentials larger than 2.8 V vs. Li"+/Li is due to the fact that SnF_2 is formed below the SnO_2 layer. This improved electrochemical understanding of the SnO_2/Sn system should be valuable in the development of tin based electrodes for lithium-ion batteries.

  1. Indium telluride nanotubes: Solvothermal synthesis, growth mechanism, and properties

    Zhou, Liyan [National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Yan, Shancheng, E-mail: yansc@njupt.edu.cn [National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China); Lu, Tao; Shi, Yi; Wang, Jianyu [National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Yang, Fan [School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China)

    2014-03-15

    hydrogen storage, compared with the nanowires. The nanotube device also has a broad light detection range from 300 nm to 1100 nm, covering the UV–visible–NIR region. This good performance of In{sub 2}Te{sub 3} nanotubes may enable significant advancements of new photodetection and photosensing applications. Highlights: • The In{sub 2}Te{sub 3} nanotube device also has a broad light detection range from 300 nm to 1100 nm. • The nanotube is 137.85 m{sup 2} g{sup −1}, which makes it suitable for gas sensing and hydrogen storage. • A possible growth mechanism of the indium telluride nanotubes was proposed. • In addition, no In{sub 2}Te{sub 3} nanotubes have been reported until now.

  2. Temperature measurement of tin under shock compression

    Hereil, Pierre-Louis; Mabire, Catherine

    2002-01-01

    The results of pyrometric measurements performed at the interface of a tin target with a LiF window material are presented for stresses ranging from 38 to 55 GPa. The purpose of the study is to analyze the part of the interface in the temperature measurement by a multi-channel pyrometric device. The results show that the glue used at target/window interface remains transparent under shock. The values of temperature measured at the tin/LiF interface are consistent with the behavior of tin under shock

  3. Tin-antimony oxide oxidation catalysts

    Berry, Frank J. [Open University, Department of Chemistry (United Kingdom)

    1998-12-15

    Tin-antimony oxide catalysts for the selective oxidation of hydrocarbons have been made by precipitation techniques. The dehydration of the amorphous dried precipitate by calcination at increasingly higher temperatures induces the crystallisation of a rutile-related tin dioxide-type phase and the segregation of antimony oxides which volatilise at elevated temperatures. The rutile-related tin dioxide-type phase contains antimony(V) in the bulk and antimony(III) in the surface. Specific catalytic activity for the oxidative dehydrogenation of butene to butadiene is associated with materials with large concentrations of antimony(III) in the surface.

  4. Electrochemical dissolution of tin in methanesulphonic acid solutions

    de Greef, R.A.T.; Janssen, L.J.J.

    2001-01-01

    High-rate electroplating of tin on a moving steel strip is generally carried out in cells with dimensionally stable anodes. To obtain a matt tin deposit a concentrated acidic tin methanesulphonate solution containing a small concentration of sulphuric acid is used. The concentrated tin

  5. Mitigating tin whisker risks theory and practice

    Handwerker, Carol A; Bath, Jasbir

    2016-01-01

    Discusses the growth mechanisms of tin whiskers and the effective mitigation strategies necessary to reduce whisker growth risks. This book covers key tin whisker topics, ranging from fundamental science to practical mitigation strategies. The text begins with a review of the characteristic properties of local microstructures around whisker and hillock grains to identify why these particular grains and locations become predisposed to forming whiskers and hillocks. The book discusses the basic properties of tin-based alloy finishes and the effects of various alloying elements on whisker formation, with a focus on potential mechanisms for whisker suppression or enhancement for each element. Tin whisker risk mitigation strategies for each tier of the supply chain for high reliability electronic systems are also described.

  6. Mechanism of manganese (mono and di) telluride thin-film formation and properties

    Sharma, Raj Kishore; Singh, Gurmeet; Shul, Yong Gun; Kim, Hansung

    2007-03-01

    Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO 4 and TeO 2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn 2+, Te 4+ and combined Mn 2+ and Te 4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

  7. GEOLOGY OF THE FLORENCIA GOLD – TELLURIDE DEPOSIT (CAMAGÜEY, CUBA AND SOME METALLURGICAL CONSIDERATIONS

    López K Jesús M.

    2006-12-01

    Full Text Available This paper describes the results from a study of the Florencia gold-telluride deposit in Central Cuba, including mineralogical, petrographical, microprobe and chemical analysis. Valuable information is provided for the exploration, mining and processing of gold ores from other nearby deposits with similar characteristics. Results highlight changes in the mineralogical composition of the ores between the north and south sectors of the deposit, as reflected in metallurgical concentrates after beneficiation and flotation of samples from these sectors.
    It is shown that gold deposits of the Cretaceous Volcanic Arc of Cuba largely consist of native gold, telluride and pyrite, where arsenopyrite is almost absent. Traces of lead, zinc and cadmium are present in the periphery of the main ore zones.

  8. Characterization of large cadmium zinc telluride crystals grown by traveling heater method

    Chen, H.; Awadalla, S.A.; Iniewski, K.

    2008-01-01

    The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these c......The focus of this paper is to evaluate thick, 20 X 20 X 10 and 10 X 10 X 10 mm(3), cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THIM). The phenomenal spectral performance and small size and low concentration of Te inclusions...

  9. Diagnostic Genesis Features of Au-Ag Selenide-Telluride Mineralization of Western Java Deposits

    Euis Tintin Yuningsih

    2016-01-01

    Full Text Available DOI: 10.17014/ijog.3.1.67-76The ore mineralogy of the westernmost part of West Java such as Pongkor, Cibaliung, Cikidang, Cikotok, and Cirotan are characterized by the dominance of silver-arsenic-antimony sulfosalt with silver selenides and rarely tellurides over the argentite, whereas the eastern part of West Java including Arinem and Cineam deposits are dominated by silver-gold tellurides. Mineralogy of Se-type deposits at Pongkor, Cikidang, Cibaliung, Cisungsang, and Cirotan and Te-type deposits at Arinem and Cineam shows their different geochemical characteristics. Mineralogical and geochemical differences can be explained by variation of physico-chemical conditions that existed during gold-silver deposition by applying the phase relation among sulfide, telluride, and selenide mineral association in the deposits. The relative values of ƒSe2(g, ƒTe(g, and ƒS2(g control the actual presence of selenide or telluride minerals within the West Java deposits, which also depend on their concentrations in the hydrothermal fluid. Even though the concentration of selenium in the hydrothermal fluid of Te-type deposits might have been similar or even higher than that in the Se-type, early substitution of selenium in the sulfide minerals prevents its concentration in the hydrothermal fluid to the levels for precipitating selenide minerals. Therefore, early sulfide mineral deposition from reduction fluids will not increase the ƒSe2(g/ƒS2(g ratio to form selenide minerals in Te-type deposits of Arinem and Cineam, other than selenium-bearing sulfide mineral such as Se-bearing galena or Se-bearing pyrargyrite-proustite.

  10. Donor impurity self-compensation by neutral complexes in bismuth doped lead telluride

    Ravich, Yu.I.; Nemov, S.A.; Proshin, V.I.

    1994-01-01

    Self-compensation is calculated of impurity doping action in semiconductors of the A 4 B 6 type by neutral complexes, consisting of a vacancy and two impurity atoms. Complexes entropy is estimated and the thermodynamic potential is minimized in the concentration of single two-charge vacancies and complexes. Calculation results are compared with experimental data, obtained when lead telluride doping by bismuth. Account for complex formation improves agreement theory with experiment. 4 refs., 1 fig

  11. Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

    Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

    2014-10-01

    Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

  12. Low-temperature Synthesis of Tin(II) Oxide From Tin(II) ketoacidoximate Precursor

    Alshankiti, Buthainah

    2015-01-01

    Sn (II) oxide finds numerous applications in different fields such as thin film transistors1, solar cells2 and sensors.3 In this study we present the fabrication of tin monoxide SnO by using Sn (II) ketoacid oximate complexes as precursors. Tin (II

  13. IMPEDANCE SPECTROSCOPY OF POLYCRYSTALLINE TIN DIOXIDE FILMS

    D. V. Adamchuck

    2016-01-01

    Full Text Available The aim of this work is the analysis of the influence of annealing in an inert atmosphere on the electrical properties and structure of non-stoichiometric tin dioxide films by means of impedance spectroscopy method. Non-stoichiometric tin dioxide films were fabricated by two-step oxidation of metallic tin deposited on the polycrystalline Al2O3 substrates by DC magnetron sputtering. In order to modify the structure and stoichiometric composition, the films were subjected to the high temperature annealing in argon atmosphere in temperature range 300–800 °С. AC-conductivity measurements of the films in the frequency range 20 Hz – 2 MHz were carried out. Variation in the frequency dependencies of the real and imaginary parts of the impedance of tin dioxide films was found to occur as a result of high-temperature annealing. Equivalent circuits for describing the properties of films with various structure and stoichiometric composition were proposed. Possibility of conductivity variation of the polycrystalline tin dioxide films as a result of аnnealing in an inert atmosphere was demonstrated by utilizing impedance spectroscopy. Annealing induces the recrystallization of the films, changing in their stoichiometry as well as increase of the sizes of SnO2 crystallites. Variation of electrical conductivity and structure of tin dioxide films as a result of annealing in inert atmosphere was confirmed by X-ray diffraction analysis. Analysis of the impedance diagrams of tin dioxide films was found to be a powerful tool to study their electrical properties. 

  14. Preliminary study of tin slag concrete mixture

    Hashim, Mohd Jamil; Mansor, Ishak; Pauzi Ismail, Mohamad; Sani, Suhairy; Azmi, Azhar; Sayuti, Shaharudin; Zaidi Ibrahim, Mohd; Adli Anuar, Abul; Rahim, Abdul Adha Abdul

    2018-01-01

    The study focuses on practices to facilitate tin smelting industry to reduce radioactive waste product (Tin Slag) by diluting its radioactivity to a safe level and turning it to a safer infrastructural building product. In the process the concrete mix which include Portland cement, sand, tin slag, water and plasticizer are used to produce interlocking brick pavements, piles and other infrastructural products. The mixing method follows DOE (UK) standard method of mixing targeted at in selected compressive strength suitable for its function and durability. A batching machine is used in the mixing and six test cubes are produced for the test. The testing equipment used are a compressional machine, ultrasonic measurement and a Geiger Muller counter to evaluate of the concrete mix to find the lowest emission of radiation surface dose without compromising the strength of concrete mix. The result obtained indicated the radioactivity of tin slag in the mixing process has reduced to background level that is 0.5μSv/h while the strength and workability of the concrete has not been severely affected. In conclusion, the concrete mix with tin slag has shown the potential it can be turned into a safe beneficial infrastructural product with good strength.

  15. Comparative assessment of gastrointestinal irritant potency in man of tin(II) chloride and tin migrated from packaging.

    Boogaard, Peter J; Boisset, Michel; Blunden, Steve; Davies, Scot; Ong, Teng Jin; Taverne, Jean-Pierre

    2003-12-01

    Tin is present in low concentrations in most canned foods and beverages, the highest levels being found in products packaged in unlacquered or partially lacquered tinplate cans. A limited number of case-reports of acute gastrointestinal disorders after consumption of food containing 100-500 mg/kg tin have been reported, but these reports suffer many insufficiencies. Controlled clinical studies on acute effects of tin migrated from packaging suggest a threshold concentration for adverse effects (AEs) of >730 mg/kg. Two separate randomised, single-centre, double-blind, crossover studies, enabling comparison of the tolerability of tin added as tin(II) chloride at concentrations of soup in 24 volunteers (Study 2) were carried out. Distribution studies were conducted to get insight in the acute AEs of low molecular weight (clear dose-response relationship was only observed when tin was added as tin(II) chloride in tomato juice. No clinically significant AEs were reported in Study 2 and comparison of the incidence of tin-related AEs showed no difference between the dose levels (including control). Tin species of low molecular weight in supernatant represented 31-32% of total tin in canned tomato soup versus 56-61% in juice freshly spiked with tin(II) chloride. Differences in the incidence of AEs following administration of tomato juice with 161 and 264 mg of tin per kg and tomato soup with 201 and 267 mg of tin per kg likely results from differences in the concentration of low molecular weight tin species and in the nature of tin complexes formed. The results of this work demonstrate that tin levels up to 267 mg/kg in canned food cause no AEs in healthy adults and support the currently proposed tin levels of 200 mg/kg and 250 mg/kg for canned beverages and canned foods, respectively, as safe levels for adults in the general population.

  16. Proton transport properties of tin phosphate, chromotropic acid ...

    The functionalized materials of tin (IV) phosphate (SnP) like chromotropic acid anchored tin ... elemental analysis (ICP–AES), thermal analysis, X-ray analysis and FTIR spectroscopy. .... nal level below 1 V, interfaced to a minicomputer for data.

  17. Microwave plasma CVD of NANO structured tin/carbon composites

    Marcinek, Marek [Warszawa, PL; Kostecki, Robert [Lafayette, CA

    2012-07-17

    A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

  18. Feasibility of preparing patterned molybdenum coatings on bismuth telluride thermoelectric modules.

    Sarobol, Pylin; Hall, Aaron Christopher; Miller, Stephen Samuel; Knight, Marlene E.; LePage, William S.; Sobczak, Catherine Elizabeth.; Wesolowski, Daniel Edward

    2013-09-01

    Molybdenum electrical interconnects for thermoelectric modules were produced by air plasma spraying a 30%CE%BCm size molybdenum powder through a laser-cut Kapton tape mask. Initial feasibility demonstrations showed that the molybdenum coating exhibited excellent feature and spacing retention (~170%CE%BCm), adhered to bismuth-telluride, and exhibited electrical conductivity appropriate for use as a thermoelectric module interconnect. A design of experiments approach was used to optimize air plasma spray process conditions to produce a molybdenum coating with low electrical resistivity. Finally, a molybdenum coating was successfully produced on a fullscale thermoelectric module. After the addition of a final titanium/gold layer deposited on top of the molybdenum coating, the full scale module exhibited an electrical resistivity of 128%CE%A9, approaching the theoretical resistivity value for the 6mm module leg of 112%CE%A9. Importantly, air plasma sprayed molybdenum did not show significant chemical reaction with bismuth-telluride substrate at the coating/substrate interface. The molybdenum coating microstructure consisted of lamellar splats containing columnar grains. Air plasma sprayed molybdenum embedded deeply (several microns) into the bismuth-telluride substrate, leading to good adhesion between the coating and the substrate. Clusters of round pores (and cracks radiating from the pores) were found immediately beneath the molybdenum coating. These pores are believed to result from tellurium vaporization during the spray process where the molten molybdenum droplets (2623%C2%B0C) transferred their heat of solidification to the substrate at the moment of impact. Substrate cooling during the molybdenum deposition process was recommended to mitigate tellurium vaporization in future studies.

  19. Synthesising highly reactive tin oxide using Tin(II2- ethylhexanoate polynucleation as precursor

    Alejandra Montenegro Hernández

    2009-01-01

    Full Text Available Tin oxide is a widely used compound in technological applications, particularity as a catalyst, gas sensor and in making varistors, transparent conductors, electrocatalytic electrodes and photovoltaic cells. An ethylhexanoate tin salt, a carboxylic acid and poly-esterification were used for synthesising highly reactive tin oxide in the present study. Synthesis was controlled by Fourier transform infrared (FTIR spectroscopy and recording changes in viscosity. The tin oxide characteristics so obtained were determined using FTIR spectroscopy, X-ray diffraction (XRD and scanning electron microscopy (SEM. The SnO2 dust synthesised and heat-treated at 550°C yielded high density aggregates, having greater than 50 μm particle size. This result demonstrates the high reactivity of the ceramic powders synthesised here.

  20. Tiny optical fiber temperature sensor based on temperature-dependent refractive index of zinc telluride film

    Bian, Qiang; Song, Zhangqi; Song, Dongyu; Zhang, Xueliang; Li, Bingsheng; Yu, Yang; Chen, Yuzhong

    2018-03-01

    The temperature-dependent refractive index of zinc telluride film can be used to develop a tiny, low cost and film-coated optical fiber temperature sensor. Pulse reference-based compensation technique is used to largely reduce the background noise which makes it possible to detect the minor reflectivity change of the film in different temperatures. The temperature sensitivity is 0.0034dB/° and the background noise is measured to be 0.0005dB, so the resolution can achieve 0.2°.

  1. Cadmium telluride gamma-radiation detectors with a high energy resolution

    Alekseeva, L.A.; Dorogov, P.G.; Ivanov, V.I.; Khusainov, A.K.

    1985-01-01

    This paper considers the possibility of improving the energy resolution of cadmium telluride gamma-radiation detectors through the choice of the geometry and size of the sensitive region of the detector. The optimum ratio of the product of the mobility and lifetime for electrons to the same product for holes from the point of view of energy resolution is greater than or equal to 10 2 for a detector of spherical geometry and should be less than or equal to 10 for a cylindrical geometry and approximately 1 for a planar geometry. The optimum values of the major and minor radii of a spherical detector are calculated

  2. Formation of solid solutions on the boundary of zinc oxidezinc telluride heterojunction

    Tsurkan, A.E.; Buzhor, L.V.

    1987-01-01

    Distribution of ZnO x Te 1-x alloy composition on the interface of zinc oxide-zinc telluride heterojunction depending on the production conditions is investigated. A regularity in the formation of an extended area with constant alloy composition is detected. The regularity is explained by the fact that electric Peltier field conditioned by contact of two heterogeneous semiconductors participates in the solid solution formation process. Peltier field levels off the composition at the end length section. So, a possibility of creating a section with the assigned minor thickness alloy constant composition controlled in the interface of heterojunction occurs

  3. Specific features of the photoconductivity of semi-insulating cadmium telluride

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  4. Iron telluride nanorods-based system for the detection of total mercury in blood

    Roy, Prathik; Lin, Zong-Hong [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Liang, Chi-Te [Department of Physics, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China); Chang, Huan-Tsung, E-mail: changht@ntu.edu.tw [Department of Chemistry, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 106, Taiwan (China)

    2012-12-15

    Graphical abstract: Elucidation of the detection of mercury using iron telluride nanorods (FeTe NRs), and dose-response curve for varying concentrations of Hg{sup 2+}. Highlights: Black-Right-Pointing-Pointer Iron telluride nanorods (FeTe NRs) are prepared from tellurium nanowires (Te NWs). Black-Right-Pointing-Pointer Mercury telluride nanorods (HgTe NRs) form by cation exchange reaction of FeTe NRs. Black-Right-Pointing-Pointer Fe{sup 2+} ions released catalyze the oxidation of ABTS by H{sub 2}O{sub 2}. Black-Right-Pointing-Pointer Mercury is effectively determined in blood with an LOD of 1.31 nM at S/N ratio 3. - Abstract: We have developed a simple, colorimetric iron telluride (FeTe) nanorods (NRs) based system for the detection of mercury, mainly based on the cation exchange reaction between FeTe NRs and Hg{sup 2+}. FeTe NRs (length, 105 {+-} 21 nm) react with Hg{sup 2+} to form HgTe NRs (length, 112 {+-} 26 nm) and consequently release Fe{sup 2+} ions that catalyzes the oxidation between a peroxidase substrate 2,2 Prime -azino-bis(3-ethylbenzo-thiazoline-6-sulfonic acid) diammonium salt (ABTS) and H{sub 2}O{sub 2}. The concentration of Fe{sup 2+} and thereby Hg{sup 2+} can be determined by measuring the absorbance of the ABTS oxidized product at 418 nm. This approach allows the detection of Hg{sup 2+}, with a limit of detection of 1.31 nM at a signal-to-noise ratio 3 and a linear range 5-100 nM (R{sup 2} = 0.99). The low-cost, simple, sensitive, and reproducible assay has been validated for the detection of Hg{sup 2+} in a blood sample (SRM 955c), with the result being in good agreement with that provided by National Institute of Standards and Technology.

  5. Hydrolysis of bis(dimethylamido)tin to tin (II) oxyhydroxide and its selective transformation into tin (II) or tin (IV) oxide

    Khanderi, Jayaprakash

    2015-03-01

    Sn6O4(OH)4, a hydrolysis product of Sn(NMe2)2, is transformed to tin (II) or tin (IV) oxide by solid and solution phase processing. Tin (II) oxide is formed by heating Sn6O4(OH)4 at ≤200 °C in air or under inert atmosphere. Tin (IV) oxide nanoparticles are formed in the presence of a carboxylic acid and base in air at room temperature. IR spectroscopy, Raman spectroscopy, thermogravimetry (coupled with infrared spectroscopy), powder X-ray diffraction, high temperature X-ray diffraction, scanning electron and transmission electron microscopy are used for the characterization of Sn6O4(OH)4 and the investigation of its selective decomposition into SnO or SnO2. Spectroscopic and X-ray diffraction results indicate that SnO is formed by the removal of water from crystalline Sn6O4(OH)4. SEM shows octahedral morphology of the Sn6O4(OH)4, SnO and SnO2 with particle size from 400 nm-2 μm during solid state conversion. Solution phase transformation of Sn6O4(OH)4 to SnO2 occurs in the presence of potassium glutarate and oxygen. SnO2 particles are 15-20 nm in size.

  6. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi_2Te_3) single crystals for thermoelectric applications

    Krishna, Anuj; Vijayan, N.; Singh, Budhendra; Thukral, Kanika; Maurya, K.K.

    2016-01-01

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi_2Te_3) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  7. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric

  8. Spatial mapping of cadmium zinc telluride materials properties and electrical response to improve device yield and performance

    Van Scyoc, J M; Yoon, H; Gilbert, T S; Hilton, N R; Lund, J C; James, R B

    1999-01-01

    Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.

  9. Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

    Schmitz, Andreas

    2013-04-30

    The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while

  10. NMR studies of metallic tin confined within porous matrices

    Charnaya, E. V.; Tien, Cheng; Lee, M. K.; Kumzerov, Yu. A.

    2007-01-01

    119 Sn NMR studies were carried out for metallic tin confined within synthetic opal and porous glass. Tin was embedded into nanoporous matrices in the melted state under pressure. The Knight shift for liquid confined tin was found to decrease with decreasing pore size. Correlations between NMR line shapes, Knight shift, and pore filling were observed. The melting and freezing phase transitions of tin under confinement were studied through temperature dependences of NMR signals upon warming and cooling. Melting of tin within the opal matrix agreed well with the liquid skin model suggested for small isolated particles. The influence of the pore filling on the melting process was shown

  11. Strain effect on the heat transport properties of bismuth telluride nanofilms with a hole

    Fang, Te-Hua; Chang, Win-Jin; Wang, Kuan-Yu; Huang, Chao-Chun

    2018-06-01

    We investigated the mechanical behavior of bismuth telluride nanofilms with holes by using an equilibrium molecular dynamics (MD) approach. The holes had diameters of 20, 30, 40, and 50 Å. The thermal conductivity values of the nanofilms were calculated under different strains at different temperatures using a nonequilibrium MD simulation. The simulation revealed that the thermal conductivity of a bismuth telluride nanofilm with a hole decreases with an increase in hole diameter at different strains. For a film with a perfect structure at 300 K, a 48% reduction (from 0.33 to 0.17 W/m K) in the thermal conductivity was observed at a 7% tensile strain. In addition, the thermal conductivity increased by approximately 39% (from 0.33 to 0.46 W/m K) at a 7% compressive strain. A very low value (0.11 W/m K) of thermal conductivity is obtained for the nanofilm with a hole diameter of 50 Å at a 7% tensile strain at 300 K.

  12. Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film

    Lee, Won-Yong; Park, No-Won [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Hong, Ji-Eun [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Yoon, Soon-Gil, E-mail: sgyoon@cnu.ac.kr [Department of Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Koh, Jung-Hyuk [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Lee, Sang-Kwon, E-mail: sangkwonlee@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2015-01-25

    Highlights: • We investigated thermal transport of the antimony telluride thin films. • The contribution of the electronic thermal conductivity increased up to ∼77% at 300 K. • We theoretically analyze and explain the high contribution of electronic component. - Abstract: We study the theoretical and experimental characteristics of thermal transport of 100 nm and 500 nm-thick antimony telluride (Sb{sub 2}Te{sub 3}) thin films prepared by radio frequency magnetron sputtering. The thermal conductivity was measured at temperatures ranging from 20 to 300 K, using four-point-probe 3-ω method. Out-of-plane thermal conductivity of the Sb{sub 2}Te{sub 3} thin film was much lesser in comparison to the bulk material in the entire temperature range, confirming that the phonon- and electron-boundary scattering are enhanced in thin films. Moreover, we found that the contribution of the electronic thermal conductivity (κ{sub e}) in total thermal conductivity (κ) linearly increased up to ∼77% at 300 K with increasing temperature. We theoretically analyze and explain the high contribution of electronic component of thermal conductivity towards the total thermal conductivity of the film by a modified Callaway model. Further, we find the theoretical model predictions to correspond well with the experimental results.

  13. Synthesis of ultra-long cadmium telluride nanotubes via combinational chemical transformation

    Park, Kee-Ryung; Cho, Hong-Baek; Choa, Yong-Ho, E-mail: choa15@hanyang.ac.kr

    2017-03-01

    Synthesis of high-throughput cadmium telluride (CdTe) nanotubes with an ultra-long aspect ratio is presented via a combination process concept combined with electrospinning, electrodeposition, and cationic exchange reaction. Ultra-long sacrificial silver (Ag) nanofibers were synthesized by electrospinning involving two-step calcination, and were then electrodeposited to create silver telluride nanotubes. These nanotubes underwent cationic exchange reaction in cadmium nitrate tetrahydrate solution with the aid of a ligand, tributylphosphine (TBP). Analysis showed that ultra-long pure zinc blende CdTe nanotubes were obtained with controlled dimension and uniform morphology. The thermodynamic driving force induced by the coordination of methanol solvent and TBP attributed to overcome the kinetic barrier between Ag{sub 2}Te and CdTe nanotubes, facilitating the synthesis of CdTe nanotubes. This synthetic process involving a topotactic reaction route paves a way for high-throughput extended synthesis of new chalcogenide hollow nanotubes for application in photodetectors and solar cells. - Highlights: • High throughput synthetic route of hollow CdTe nanotubes with ultra-long aspect ratio. • Chemical combination of electrospinning, electrodeposition & cation exchange reaction. • Pure zinc blende CdTe by controlled dimension & structural variation of Ag nanofibers. • Potential for the high throughput synthesis of new exotic chalcogenide nanotubes.

  14. Possible bicollinear nematic state with monoclinic lattice distortions in iron telluride compounds

    Bishop, Christopher B. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Herbrych, Jacek W. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Dagotto, Elbio R. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Moreo, Adriana [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-07-15

    Here, iron telluride (FeTe) is known to display bicollinear magnetic order at low temperatures together with a monoclinic lattice distortion. Because the bicollinear order can involve two different wave vectors (π/2,π/2) and (π/2,–π/2), symmetry considerations allow for the possible stabilization of a nematic state with short-range bicollinear order coupled to monoclinic lattice distortions at a TS higher than the temperature TN where long-range bicollinear order fully develops. As a concrete example, the three-orbital spin-fermion model for iron telluride is studied with an additional coupling ˜λ12 between the monoclinic lattice strain and an orbital-nematic order parameter with B2g symmetry. Monte Carlo simulations show that with increasing ˜λ12 the first-order transition characteristic of FeTe splits and bicollinear nematicity is stabilized in a (narrow) temperature range. In this new regime, the lattice is monoclinically distorted and short-range spin and orbital order breaks rotational invariance. A discussion of possible realizations of this exotic state is provided.

  15. The use of cadmium telluride γ spectrometers in monitoring activity deposited in nuclear power stations

    Jones, L.T.

    1977-01-01

    The ability to inspect and test key components and when necessary repair or replace them is a significant factor in the safety case submitted before consent is given for construction of a nuclear reactor. A knowledge of the probable rate of deposition and isotopic composition of radioactive contamination in these areas is necessary and since it is not always practicable to take samples away to the laboratory for analysis, direct gamma ray spectroscopy in the contaminated environment is sometimes used. The experience of direct monitoring with a cadmium telluride spectrometer in two such reactor situations is reported. In the first situation, a remotely cooled intrinsic Germanium spectrometer was used in equivalent positions and spectra from both systems are presented. The relative merits of the two systems are discussed. In the second situation, measurements were made in an environment at 70 deg C in radiation levels of 10Rh -1 . An improvised cooling system was used to maintain the Cadmium Telluride at about 20 deg C and Pile-up Rejection was used to enable count rates of about 10 5 s -1 to be handled. It is noted that the usually quoted detector parameters, resolution and crystal volume, are not necessarily the most important in practical spectrometry of mixed isotopes. As with germanium detectors, the most useful parameter is probably the Peak-to-Compton ratio

  16. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  17. Characterization of tin selenides synthesized by high-energy milling

    Marcela Achimovičová

    2011-12-01

    Full Text Available Tin selenides SnSeX (x=1,2 were synthesized from tin and selenium powder precursors by high-energy milling in the planetary ballmill Pulverisette 6 (Fritsch, Germany. The orthorhombic tin selenide SnSe and the hexagonal tin diselenide SnSe2 phases were formed after4 min and 5 min of milling, respectively. Specific surface area of both selenides increased with increasing time of mechanochemicalsynthesis. The particle size distribution analysis demonstrated that the synthesized products contain agglomerated selenide particlesconsisting of numerous idiomorphic tin selenide crystals, measuring from 2 to more than 100 nm in diameter, which were also documentedby TEM. UV-Vis spectrophotometry confirmed that tin selenide particles do not behave as quantum dots.

  18. Determination of tin in cassiterite ores by colorimetry of iodometry

    Rodriguez Hernandez, B.

    1972-01-01

    The analytical methods are described far the determination of tin in cassiterite ores. The gallein-colorimetric method is described for determining small amounts of tin, covering the 0,01-0,5 per cent range. The sample is decomposed by heating with ammonium iodide, and tin is analyzed colorimetrically by means of it s complex with gallein. The final measure may be brought about either visually or spectrophotometrically at 525 nm. (Author)

  19. Charge sharing and charge loss in a cadmium-zinc-telluride fine-pixel detector array

    Gaskin, J.A.; Sharma, D.P.; Ramsey, B.D.

    2003-01-01

    Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a cadmium-zinc-telluride multi-pixel detector is ideal for hard X-ray astrophysical observation. As part of on-going research at MSFC to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750 μm pitch), 1 mm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300 μm pitch). Future work will enable us to compare the simulated results for the finer array to measured values

  20. Structural, Mechanical and Thermodynamic Properties under Pressure Effect of Rubidium Telluride: First Principle Calculations

    Bidai K.

    2017-06-01

    Full Text Available First-principles density functional theory calculations have been performed to investigate the structural, elastic and thermodynamic properties of rubidium telluride in cubic anti-fluorite (anti-CaF2-type structure. The calculated ground-state properties of Rb2Te compound such as equilibrium lattice parameter and bulk moduli are investigated by generalized gradient approximation (GGA-PBE that are based on the optimization of total energy. The elastic constants, Young’s and shear modulus, Poisson ratio, have also been calculated. Our results are in reasonable agreement with the available theoretical and experimental data. The pressure dependence of elastic constant and thermodynamic quantities under high pressure are also calculated and discussed.

  1. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

  2. Effect of ball milling time on thermoelectric properties of bismuth telluride nanomaterials

    Khade, Poonam; Bagwaiya, Toshi; Bhattacharaya, Shovit; Singh, Ajay; Jha, Purushottam; Shelke, Vilas

    2018-04-01

    The effect of different milling time on thermoelectric properties of bismuth telluride (Bi2Te3) was investigated. The nanomaterial was prepared by varying the ball milling time and followed by hot press sintering. The crystal structure and phase formation were verified by X-ray diffraction and Raman Spectroscopy. The experimental results show that electrical conductivity increases whereas thermal conductivity decreases with increasing milling time. The negative sign of seebeck coefficient indicate the n-type nature with majority charge carriers of electrons. A maximum figure of merit about 0.55 is achieved for l5hr ball milled Bi2Te3 sample. The present study demonstrates the simple and cost-effective method for synthesis of Bi2Te3 thermoelectric material at large scale thermoelectric applications.

  3. High pressure and doping effects on the Curie temperature in chromium telluride

    Grazhdankina, N.P.; Bersenev, Yu.S.

    1976-01-01

    Results of an experimental investigation of the effect of hydrostatic pressure (up to 12 kbars) on the Curie temperature Tsub(c) of solid CrTsub(1-x)Xsub(x) solutions (X=Se, Sb) are presented for x concentration values up to 0.5. The baric coefficients γ=Tsub(c)sup(-1)(dTsub(c)/dP) for all alloys investigated are negative. However the γ(x) dependence is determined by the X alloy component and correspondingly by the nature of the compression which may be either isotropic (X=Se) or anisotropic (X=Sb). Possible mechanisms of exchange spin coupling in the alloys investigated are discussed on the basis of the data obtained. It is concluded that two types of exchange interactions coexist in chromium telluride: indirect exchange of localized electrons via the anion and interaction between collectivized electrons in the narrow 3d band energy determines the Curie temperature

  4. An additive approach to low temperature zero pressure sintering of bismuth antimony telluride thermoelectric materials

    Catlin, Glenn C.; Tripathi, Rajesh; Nunes, Geoffrey; Lynch, Philip B.; Jones, Howard D.; Schmitt, Devin C.

    2017-03-01

    This paper presents an additive-based approach to the formulation of thermoelectric materials suitable for screen printing. Such printing processes are a likely route to such thermoelectric applications as micro-generators for wireless sensor networks and medical devices, but require the development of materials that can be sintered at ambient pressure and low temperatures. Using a rapid screening process, we identify the eutectic combination of antimony and tellurium as an additive for bismuth-antimony-telluride that enables good thermoelectric performance without a high pressure step. An optimized composite of 15 weight percent Sb7.5Te92.5 in Bi0.5Sb1.5Te3 is scaled up and formulated into a screen-printable paste. Samples fabricated from this paste achieve a thermoelectric figure of merit (ZT) of 0.74 using a maximum processing temperature of 748 K and a total thermal processing budget of 12 K-hours.

  5. Trace analysis in cadmium telluride by heavy ion induced X-ray emission and by SIMS

    Scharager, C.; Stuck, R.; Siffert, P.; Cailleret, J.; Heitz, Ch.; Lagarde, G.; Tenorio, D.

    1979-01-01

    The possibilities of using both selective heavy ion induced X-ray emission and secondary ion mass spectroscopy (SIMS), for the identification of impurities present at low concentrations in cadmium telluride are examined. The relative concentrations of the impurities along CdTe crystals have been determined by exciting the X-ray emission of the elements in several slices with Ar and Kr ions and by comparing the relative characteristic X-ray emission yields. As a consequence of the quasimolecular inner shell ionization mechanism in heavy ion-atom collisions, Ar and Kr ions allow a strong excitation of the main impurities seen by SIMS namely Si, Cl and Ge, As, with only a minor contribution of Cd and Te. From the changes of the concentrations of the various impurities along the crystal, informations about segregation coefficients and compensation can be obtained

  6. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

    Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

    2017-09-01

    Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

  7. First operation of cesium telluride photocathodes in the TTF injector RF gun

    Sertore, D; Flöttmann, K; Stephan, F; Zapfe, K; Michelato, P

    2000-01-01

    During the run 1998/1999 a new injector based on a laser-driven RF gun was brought in operation at the TESLA Test Facility (TTF) linac at DESY, in order to produce the beam structure and quality required either by TeV collider and SASE FEL experiments. High quantum efficiency cesium telluride photocathodes, prepared at Milano and transferred to DESY, have been successfully operated in the RF gun. A bunch charge of 50 nC, only limited by space charge effects, was achieved. The photocathodes have shown an operative lifetime of several months. A new cathode surface finishing has showed a promising decrease of the photocathode dark current. Measurements of dark current, quantum efficiency and lifetime are reported.

  8. Preparation of textural lamellar tin deposits via electrodeposition

    Wen, Xiaoyu; Pan, Xiaona; Wu, Libin; Li, Ruinan; Wang, Dan; Zhang, Jinqiu; Yang, Peixia

    2017-06-01

    Lamellar tin deposits were prepared by galvanostatical electroplating from the aqueous acidic-sulfate bath, with gelatin and benzalacetone dissolved in ethanol (ABA+EtOH) as additive, and their morphologies were investigated by scanning electron microscopy. Cathodic polarization curves revealed that the absorbability of ABA+EtOH on the cathode surface was higher than that of gelatin. X-ray diffraction analysis indicated preferred orientations of tin growth led to the formation of lamellar structure and distortion of tin lattice. The growth mechanism of lamellar tin was also discussed.

  9. Atomic dynamics of tin nanoparticles embedded into porous glass

    Parshin, P. P.; Zemlyanov, M. G., E-mail: zeml@isssph.kiae.ru; Panova, G. Kh.; Shikov, A. A. [Russian Research Centre Kurchatov Institute (Russian Federation); Kumzerov, Yu. A.; Naberezhnov, A. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Sergueev, I.; Crichton, W. [European Synchrotron Radiation Facility (France); Chumakov, A. I. [Russian Research Centre Kurchatov Institute (Russian Federation); Rueffer, R. [European Synchrotron Radiation Facility (France)

    2012-03-15

    The method of resonant nuclear inelastic absorption of synchrotron radiation has been used to study the phonon spectrum for tin nanoparticles (with a natural isotope mixture) embedded into a porous glassy (silica) matrix with an average pore diameter of 7 nm in comparison to the analogous spectrum of bulk tin enriched with {sup 119}Sn isotope. Differences between the spectra have been observed, which are related to both the dimensional effects and specific structural features of the porous glass-tin nanocomposite. Peculiarities in the dynamics of tin atoms embedded into nanopores of glass are interpreted in terms of a qualitative model of the nanocomposite structure.

  10. Atomic dynamics of tin nanoparticles embedded into porous glass

    Parshin, P. P.; Zemlyanov, M. G.; Panova, G. Kh.; Shikov, A. A.; Kumzerov, Yu. A.; Naberezhnov, A. A.; Sergueev, I.; Crichton, W.; Chumakov, A. I.; Rüffer, R.

    2012-01-01

    The method of resonant nuclear inelastic absorption of synchrotron radiation has been used to study the phonon spectrum for tin nanoparticles (with a natural isotope mixture) embedded into a porous glassy (silica) matrix with an average pore diameter of 7 nm in comparison to the analogous spectrum of bulk tin enriched with 119 Sn isotope. Differences between the spectra have been observed, which are related to both the dimensional effects and specific structural features of the porous glass-tin nanocomposite. Peculiarities in the dynamics of tin atoms embedded into nanopores of glass are interpreted in terms of a qualitative model of the nanocomposite structure.

  11. Novel aspects of application of cadmium telluride quantum dots nanostructures in radiation oncology

    Fazaeli, Yousef; Feizi, Shahzad [Nuclear Science and Technology Research Institute (NSTRI), Radiation Application Research School, Karaj (Iran, Islamic Republic of); Zare, Hakimeh; Karimi, Shokufeh [Yazd University, Department of Physics, Yazd (Iran, Islamic Republic of); Rahighi, Reza [Sharif University of Technology, Department of Physics, Tehran (Iran, Islamic Republic of)

    2017-08-15

    In the last two decades, quantum dots nanomaterials have garnered a great deal of scientific interest because of their unique properties. Quantum dots (QDs) are inorganic fluorescent nanocrystals in the size range between 1 and 20 nm. Due to their structural properties, they possess distinctive properties and behave in different way from crystals in macro scale, in many branches of human life. Cadmium telluride quantum dots (CdTe QDs) were labeled with {sup 68}Ga radio nuclide for fast in vivo targeting and coincidence imaging of tumors. Using instant paper chromatography, the physicochemical properties of the Cadmium telluride quantum dots labeled with {sup 68}Ga NPs ({sup 68}Ga rate at CdTe QDs) were found high enough stable in organic phases, e.g., a human serum, to be reliably used in bioapplications. In vivo biodistribution of the {sup 68}Ga rate at CdTe QDs nanoconposite was investigated in rats bearing fibro sarcoma tumor after various post-injection periods of time. The {sup 68}Ga NPs exhibited a rapid as well as high tumor uptake in a very short period of time (less than 10 min), resulting in an efficient tumor targeting/imaging agent. Meantime, the low lipophilicity of the {sup 68}Ga NPs caused to their fast excretion throughout the body by kidneys (as also confirmed by the urinary tract). Because of the short half-life of {sup 68}Ga radionuclide, the {sup 68}Ga rate at CdTe QDs with an excellent tumor targeting/imaging and fast washing out from the body can be suggested as one of the most effective and promising nanomaterials in nanotechnology-based cancer diagnosis and therapy. (orig.)

  12. Novel aspects of application of cadmium telluride quantum dots nanostructures in radiation oncology

    Fazaeli, Yousef; Zare, Hakimeh; Karimi, Shokufeh; Rahighi, Reza; Feizi, Shahzad

    2017-08-01

    In the last two decades, quantum dots nanomaterials have garnered a great deal of scientific interest because of their unique properties. Quantum dots (QDs) are inorganic fluorescent nanocrystals in the size range between 1 and 20 nm. Due to their structural properties, they possess distinctive properties and behave in different way from crystals in macro scale, in many branches of human life. Cadmium telluride quantum dots (CdTe QDs) were labeled with 68Ga radio nuclide for fast in vivo targeting and coincidence imaging of tumors. Using instant paper chromatography, the physicochemical properties of the Cadmium telluride quantum dots labeled with 68Ga NPs (68Ga@ CdTe QDs) were found high enough stable in organic phases, e.g., a human serum, to be reliably used in bioapplications. In vivo biodistribution of the 68Ga@ CdTe QDs nanoconposite was investigated in rats bearing fibro sarcoma tumor after various post-injection periods of time. The 68Ga NPs exhibited a rapid as well as high tumor uptake in a very short period of time (less than 10 min), resulting in an efficient tumor targeting/imaging agent. Meantime, the low lipophilicity of the 68Ga NPs caused to their fast excretion throughout the body by kidneys (as also confirmed by the urinary tract). Because of the short half-life of 68Ga radionuclide, the 68Ga@ CdTe QDs with an excellent tumor targeting/imaging and fast washing out from the body can be suggested as one of the most effective and promising nanomaterials in nanotechnology-based cancer diagnosis and therapy.

  13. MAGIC NUCLEI: Tin-100 turns up

    Anon.

    1994-01-01

    In the same way as the Periodic Table of chemical elements reflects the successive filling of orbital electron shells, in nuclear physics the socalled 'magic' numbers correspond to closed shells of 2, 8, 20, 28, 50, 82, 126,... neutrons and/or protons. More tightly bound than other nuclei, these are the nuclear analogues of the inert gases. 'Doubly magic' nuclei have closed shells of both neutrons and protons. Examples in nature are helium-4 (2 protons and 2 neutrons), oxygen-16 (8 and 8), calcium-40 (20 and 20) and calcium-48 (20 and 28). Radioactive tin-132 (50+82) has been widely studied

  14. Moessbauer effect in superconducting organosol of tin

    Dekhtyar, I.Ya.; Zhelibo, E.P.; Kushnir, B.G.; Nishchenko, M.M.; Pan, V.M.; Popov, A.G.; Khvorov, M.M.; AN Ukrainskoj SSR, Kiev. Inst. Kolloidnoj Khimii i Khimii Vody)

    1977-01-01

    Structure of disperse particles (approximately 1 μm) of tin organosols have been investigated by means of the Moessbauer effect. A considerable amount of oxides (up to 20%) in amorphous (SnO 2 ) or in metastable crystalline (SnO) states has been discovered. The observed properties of the Moessbauer spectrum of organosols are compared with measurements of their critical temperature. The effect of impurities and of other structural defects on the dynamic and superconducting properties of organosols is observed. Temperature broadening of lines and temperature variation of the Moessbauer effect value for the particle of different dimensions are in a qualitative agreement with the theory of the granular Moessbauer absorbers

  15. Structure impact on the thermal and electronic properties of bismuth telluride by ab-initio and molecular dynamics calculations

    Termentzidis, K; Pokropivny, A; Xiong, S-Y; Chumakov, Y; Volz, S; Woda, M; Cortona, P

    2012-01-01

    We use molecular dynamics and ab-initio methods to predict the thermal and electronic properties of new materials with high figures of merit. The simulated systems are bulk bismuth tellurides with antisite and vacancy defects. Optimizations of the materials under investigation are performed by the SIESTA code for subsequent calculations of force constants, electronic properties, and Seebeck coefficients. The prediction of the thermal conductivity is made by Non-Equilibrium Molecular Dynamics (NEMD) using the LAMMPS code. The thermal conductivity of bulk bismuth telluride with different stoichiometry and with a number of substitution defects is calculated. We have found that the thermal conductivity can be decreased by 60% by introducing vacancy defects. The calculated thermal conductivities for the different structures are compared with the available experimental and theoretical results.

  16. Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

    Devender,; Mehta, Rutvik J.; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lofgreen, Kelly; Mahajan, Ravi [Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States); Yamaguchi, Masashi [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Borca-Tasciuc, Theodorian [Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-03-15

    Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.

  17. Diffusion of iron in β-iron telluride (Fe1.12Te) by Moessbauer spectroscopy and tracer method

    Magara, Masaaki; Tsuji, Toshihide; Naito, Keiji

    1993-01-01

    The diffusion coefficient of iron in a β-iron telluride (Fe 1.12 Te) polycrystalline sample was measured by Moessbauer diffusional line broadening method which relates to the collapse of coherence in gamma-ray photon by the atomic jump at local sites. The diffusion coefficient of iron along the c-axis in nearly single crystal of β-iron telluride was also measured by tracer technique which shows the results of an atom transport in long distance. The activation energies for the diffusion of iron in Fe 1.12 Te obtained by the Moessbauer spectroscopy and the tracer method were 91.5±5.4 and 106±23 kJ/mol, respectively. The diffusion coefficients of iron in β-iron telluride obtained by Moessbauer line broadening are in fair agreement with the values averaged from that along c-axis obtained by tracer method and that along a- and b-axes obtained from reaction rate constant between iron and tellurium by the previous study of the present authors. (orig.)

  18. Anomalous growth of whisker-like bismuth-tin extrusions from tin-enriched tin-Bi deposits

    Hu, C.-C.; Tsai, Y.-D.; Lin, C.-C.; Lee, G.-L.; Chen, S.-W.; Lee, T.-C.; Wen, T.-C.

    2009-01-01

    This article shows the first finding that the anomalous growth of Bi-Sn extrusions from tin-enriched alloys (Sn-xBi with x between 20 and 10 wt.%) can be induced by post-plating annealing in N 2 between 145 and 260 deg. C for 10 min although metal whiskers were commonly formed on the surface of pure metals or alloys of the enriched component. From SEM observations, very similar to Sn whiskers, Bi-Sn extrusions vary in size, shape, length, and diameter with changing the annealing temperature, which are highly important in regarding the potential for failure of electronic products. Annealing resulting in thermal expansion of Sn grains is believed to squeeze the Bi-Sn alloys with relatively low melting points to form whisker-like extrusions although the exact mechanism is unclear

  19. Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

    Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

    2016-01-01

    The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

  20. Tin and tin-titanium as catalyst components for reversible hydrogen storage of sodium aluminium hydride

    Qi Jia Fu; Shik Chi Tsang [University of Reading, Reading (United Kingdom). Surface and Catalysis Research Centre, School of Chemistry

    2006-10-15

    This paper is concerned with the effects of adding tin and/or titanium dopant to sodium aluminium hydride for both dehydrogenation and re-hydrogenation reactions during their reversible storage of molecular hydrogen. Temperature programmed decomposition (TPD) measurements show that the dehydrogenation kinetics of NaAlH{sub 4} are significantly enhanced upon doping the material with 2 mol% of tributyltin hydride, Sn(Bu)3H but the tin catalyst dopant is shown to be inferior than titanium. On the other hand, in this preliminary work, a significant synergetic catalytic effect is clearly revealed in material co-doped with both titanium and tin catalysts which shows the highest reversible rates of dehydrogenation and re-hydrogenation (after their hydrogen depletion). The re-hydrogenation rates of depleted Sn/Ti/NaAlH{sub 4} evaluated at both 9.5 and 140 bars hydrogen are also found to be favourable compared to the Ti/NaAlH{sub 4}, which clearly suggest the importance of the catalyst choice. Basing on these results some mechanistic insights for the catalytic reversible dehydrogenation and re-hydrogenation processes of Sn/Ti/NaAlH{sub 4} are therefore made. 31 refs., 8 figs., 2 tabs.

  1. Directly smelted lead-tin alloys: A historical perspective

    Dube, R. K.

    2010-08-01

    This paper discusses evidence related to the genesis and occurrence of mixed lead-tin ore deposit consisting of cassiterite and the secondary minerals formed from galena. These evidences belong to a very long time period ranging from pre-historic to as late as the nineteenth century a.d. This type of mixed ore deposits was smelted to prepare lead-tin alloys. The composition of the alloy depended on the composition of the starting ore mixture. A nineteenth century evidence for the production of directly smelted lead-tin alloys in southern Thailand is discussed. A unique and rather uncommon metallurgical terminology in Sanskrit language— Nāgaja—was introduced in India for the tin recovered from impure lead. This suggests that Indians developed a process for recovering tin from lead-tin alloys, which in all probability was based on the general principle of fire refining. It has been shown that in the context of India the possibility of connection between the word Nāgaja and the directly smelted lead-tin alloys cannot be ruled out.

  2. Microstructured extremely thin absorber solar cells

    Biancardo, Matteo; Krebs, Frederik C

    2007-01-01

    In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed by press......In this paper we present the realization of extremely thin absorber (ETA) solar cells employing conductive glass substrates functionalized with TiO2 microstructures produced by embossing. Nanocrystalline or compact TiO2 films on Indium doped tin oxide (ITO) glass substrates were embossed...

  3. Electrodeposition of rhenium-tin nanowires

    Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer

    2011-01-01

    Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.

  4. Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

    Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh; Tahmasbi Rad, Armin; Tayebi, Lobat

    2014-01-01

    Nanocomposite thermoelectric compound of bismuth telluride (Bi 2 Te 3 ) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi 2 Te 3 were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

  5. N-hydroxysuccinimide-mediated photoelectrooxidation of aliphatic alcohols based on cadmium telluride nanoparticles decorated graphene nanosheets

    Navaee, Aso; Salimi, Abdollah

    2013-01-01

    A simple nonenzymatic electrochemical protocol is proposed for the oxidation of aliphatic alcohols using formed N-hydroxysuccinimide (NHS) radical cation on the graphene nanosheets/L-cysteine/cadmium telluride quantum dot (QD) nanocomposite (GNs/Cys/CdTe) modified glassy carbon (GC) electrode. At first, graphene oxide (GO) is chemically synthesized from graphite after which Cys is covalently functionalized to GO through formation of amide bonds between carboxylic acid groups of GO and amine groups of Cys. The resulting GNs/Cys is used as a capping agent to synthesize CdTe QD nanoparticles. After the characterization of the as-made nanocomposite which confirmed the successful attachment of CdTe nanoparticles to the GNs, the ability of the GNs/Cys/CdTe modified GC electrode toward the nonenzymatic ethanol electrooxidation is examined in the presence of NHS as an effective mediating system. Our results revealed that the proposed system possess a good activity to NHS electrooxidation and subsequently, ethanol oxidation. Moreover, the GNs/Cys/CdTe modified electrode displayed a significant photoelectrocatalytic activity toward the ethanol oxidation upon illumination by visible light. The photoactive GNs/Cys/CdTe nanohybrid presented here showing favorable photoelectrochemical features for nonenzymatic aliphatic alcohols oxidation may hold great promise to the development of electrochemical sensors and biofuel cells

  6. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs

    Brunett, B.A.; Lund, J.C.; Van Scyoc, J.M.; Hilton, N.R.; Lee, E.Y.; James, R.B.

    1999-01-01

    The goal of this project was to utilize a novel device design to build a compact, high resolution, room temperature operated semiconductor gamma ray sensor. This sensor was constructed from a cadmium zinc telluride (CZT) crystal. It was able to both detect total radiation intensity and perform spectroscopy on the detected radiation. CZT detectors produced today have excellent electron charge carrier collection, but suffer from poor hole collection. For conventional gamma-ray spectrometers, both the electrons and holes must be collected with high efficiency to preserve energy resolution. The requirement to collect the hole carriers, which have relatively low lifetimes, limits the efficiency and performance of existing experimental devices. By implementing novel device designs such that the devices rely only on the electron signal for energy information, the sensitivity of the sensors for detecting radiation can be increased substantially. In this report the authors describe a project to develop a new type of electron-only CZT detector. They report on their successful efforts to design, implement and test these new radiation detectors. In addition to the design and construction of the sensors the authors also report, in considerable detail, on the electrical characteristics of the CZT crystals used to make their detectors

  7. Study of a high-resolution, 3-D positioning cadmium zinc telluride detector for PET

    Gu, Y; Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-01-01

    This paper investigates the performance of 1 mm resolution Cadmium Zinc Telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3-D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06±0.39% at 511 keV throughout most the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44±0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78±0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes – as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system. PMID:21335649

  8. Study of a high-resolution, 3D positioning cadmium zinc telluride detector for PET.

    Gu, Y; Matteson, J L; Skelton, R T; Deal, A C; Stephan, E A; Duttweiler, F; Gasaway, T M; Levin, C S

    2011-03-21

    This paper investigates the performance of 1 mm resolution cadmium zinc telluride (CZT) detectors for positron emission tomography (PET) capable of positioning the 3D coordinates of individual 511 keV photon interactions. The detectors comprise 40 mm × 40 mm × 5 mm monolithic CZT crystals that employ a novel cross-strip readout with interspersed steering electrodes to obtain high spatial and energy resolution. The study found a single anode FWHM energy resolution of 3.06 ± 0.39% at 511 keV throughout most of the detector volume. Improved resolution is expected with properly shielded front-end electronics. Measurements made using a collimated beam established the efficacy of the steering electrodes in facilitating enhanced charge collection across anodes, as well as a spatial resolution of 0.44 ± 0.07 mm in the direction orthogonal to the electrode planes. Finally, measurements based on coincidence electronic collimation yielded a point spread function with 0.78 ± 0.10 mm FWHM, demonstrating 1 mm spatial resolution capability transverse to the anodes-as expected from the 1 mm anode pitch. These findings indicate that the CZT-based detector concept has excellent performance and shows great promise for a high-resolution PET system.

  9. Heart imaging by cadmium telluride gamma camera European Program 'BIOMED' consortium

    Scheiber, C; Chambron, J; Prat, V; Kazandjan, A; Jahnke, A; Matz, R; Thomas, S; Warren, S; Hage-Hali, M; Regal, R; Siffert, P; Karman, M

    1999-01-01

    Cadmium telluride semiconductor detectors (CdTe) operating at room temperature are attractive for medical imaging because of their good energy resolution providing excellent spatial and contrast resolution. The compactness of the detection system allows the building of small light camera heads which can be used for bedside imaging. A mobile pixellated gamma camera based on 2304 CdTe (pixel size: 3x3 mm, field of view: 15 cmx15 cm) has been designed for cardiac imaging. A dedicated 16-channel integrated circuit has also been designed. The acquisition hardware is fully programmable (DSP card, personal computer-based system). Analytical calculations have shown that a commercial parallel hole collimator will fit the efficiency/resolution requirements for cardiac applications. Monte-Carlo simulations predict that the Moire effect can be reduced by a 15 deg. tilt of the collimator with respect to the detector grid. A 16x16 CdTe module has been built for the preliminary physical tests. The energy resolution was 6.16...

  10. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    Beck, Patrick R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  11. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow

    Ghaedi, M.; Hekmati Jah, A.; Khodadoust, S.; Sahraei, R.; Daneshfar, A.; Mihandoost, A.; Purkait, M. K.

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  12. Fluorescence Stability of Mercaptopropionic Acid Capped Cadmium Telluride Quantum Dots in Various Biochemical Buffers.

    Borse, Vivek; Kashikar, Adisha; Srivastava, Rohit

    2018-04-01

    Quantum dots are the semiconductor nanocrystals having unique optical and electronic properties. Quantum dots are category of fluorescent labels utilized for biological tagging, biosensing, bioassays, bioimaging and in vivo imaging as they exhibit very small size, signal brightness, photostability, tuning of light emission range, longer photoluminescence decay time as compared to organic dyes. In this work, we have synthesized and characterized mercaptopropionic acid capped cadmium telluride quantum dots (MPA-CdTe QDs) using hydrothermal method. The study further reports fluorescence intensity stability of quantum dots suspended in different buffers of varying concentration (1-100 mM), stored at various photophysical conditions. Fluorescence intensity values were reduced with increase in buffer concentration. When the samples were stored at room temperature in ambient light condition the quantum dots suspended in different buffers lost the fluorescence intensity after day 15 (except TRIS II). Fluorescence intensity values were found stable for more than 30 days when the samples were stored in dark condition. Samples stored in refrigerator displayed modest fluorescence intensity even after 300 days of storage. Thus, storage of MPA-CdTe QDs in refrigerator may be the suitable choice to maintain its fluorescence stability for longer time for further application.

  13. Cadmium-Zinc-Telluride photon detector for epithermal neutron spectroscopy--pulse height response characterisation

    Tardocchi, M.; Pietropaolo, A.; Andreani, C.; Bracco, A.; D'Angelo, A.; Gorini, G.; Imberti, S.; Senesi, R.; Rhodes, N.J.; Schooneveld, E.M.

    2004-01-01

    The Resonance Detector Spectrometer was recently revised for neutron spectroscopic studies in the eV energy region. In this technique one makes use of a photon detector to record the gamma emission from analyser foils used as neutron-gamma converters. The pulse-height response of a Cadmium-Zinc-Telluride photon detector to neutron capture emission from 238 U and 197 Au analyser foils was characterised in the neutron energy range 1-200 eV. The experiment was performed on the VESUVIO spectrometer at the ISIS neutron-pulsed source. A biparametric data acquisition, specifically developed for these measurements, allowed the simultaneous measurements of both the neutron time of flight and γ pulse-height spectra. Through the analysis of the γ pulse-height spectra the main components of the signal associated with resonant and non-resonant neutron absorption were identified. It was also shown that, in principle, energy discrimination can be used to improve the signal to background ratio of the neutron time-of-flight measurement

  14. Effect of reducing agent strength on the growth and thermoelectric performance of nanocrystalline bismuth telluride

    Nour, Asmaa; Hassan, Nazly; Refaat, Heba M.; Soliman, Hesham M. A.; El-Dissouky, A.

    2018-03-01

    A novel combination of Trizma, as an environmentally friendly chelating agent, with either weak or strong reducing agent was used to produce n-type bismuth telluride (Bi2Te3) nanocrystals via water-based chemical route. The synthesized powders were consolidated into pellets utilizing spark plasma sintering (SPS). The sintered n-type pellets exhibited potentially high electrical conductivities (5.29 × 105 and 5.23 × 105 S.m‑1) and low lattice thermal conductivities (0.12 and 0.25 Wm‑1K‑1) respectively. These thermoelectric (TE) properties suggested that the partially coherent boundaries permitted significant phonons scattering and electrons transfer. These led to an enhanced figure-of-merit (ZT) values (0.52 and 0.97), which are considered to be significant among the reported ZT values at room-temperature for the undoped synthesized n-type Bi2Te3 nanoparticles. Therefore, the current investigation displayed an efficient method to improve ZT of TE materials via nanostructure orchestrating, resulting in a worthy candidate n-type nanostructured Bi2Te3 for room-temperature TE applications.

  15. Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe

    BRUNETT, BRUCE A.; DOYLE, BARNEY L.; JAMES, RALPH B.; VIZKELETHY, GYORGY; WALSH, DAVID S.

    1999-01-01

    The electronic transport properties of Cadmium Zinc Telluride (CZT) determine the charge collection efficiency (i.e. the signal quality) of CZT detectors. These properties vary on both macroscopic and microscopic scale and depend on the presence of impurities and defects introduced during the crystal growth. Ion Beam Induced Charge Collection (IBICC) is a proven method to measure the charge collection efficiency. Using an ion microbeam, the charge collection efficiency can be mapped with submicron resolution, and the map of electronic properties (such as drift length) can be calculated from the measurement. A more sophisticated version of IBICC, the Time Resolved IBICC (TRIBICC) allows them to determine the mobility and the life time of the charge carriers by recording and analyzing the transient waveform of the detector signal. Furthermore, lateral IBICC and TRIBICC can provide information how the charge collection efficiency depends on the depth where the charge carriers are generated. This allows one to deduce information on the distribution of the electric field and transport properties of the charge carriers along the detector axis. IBICC and TRIBICC were used at the Sandia microbeam facility to image electronic properties of several CZT detectors. From the lateral TRIBICC measurement the electron and hole drift length profiles were calculated

  16. Effect of the interface on the mechanical properties and thermal conductivity of bismuth telluride films

    Lai, Tang-Yu; Wang, Kuan-Yu; Fang, Te-Hua; Huang, Chao-Chun

    2018-02-01

    Bismuth telluride (Bi2Te3) is a type of thermoelectric material used for energy generation that does not cause pollution. Increasing the thermoelectric conversion efficiency (ZT) is one of the most important steps in the development of thermoelectric components. In this study, we use molecular dynamics to investigate the mechanical properties and thermal conductivity of quintuple layers of Bi2Te3 nanofilms with different atomic arrangements at the interface and study the effects of varying layers, angles, and grain boundaries. The results indicate that the Bi2Te3 nanofilm perfect substrate has the ideal Young’s modulus and thermal conductivity, and the maximum yield stress is observed for a thickness of ∼90 Å. As the interface changed, the structural disorder of atomic arrangement affected the mechanical properties; moreover, the phonons encounter lattice disordered atomic region will produce scattering reduce heat conduction. The results of this investigation are helpful for the application of Bi2Te3 nanofilms as thermoelectric materials.

  17. Investigation of the electrochemical deposition of thick layers of cadmium telluride

    Rousset, J.

    2007-04-01

    This research thesis deals with the problem of electrochemical deposition of thick layers of cadmium telluride (CdTe) meeting the requirements of high energy radiation detection. The author first recalls the physicochemical properties of CdTe and the basic principles of radiology. He details the different criteria which define a material for X ray detection. He describes the experimental conditions, the nature and preparation of substrates, and the different electrochemical systems used in this research. He studies the impact of the applied potential on the material properties, and compares previously obtained results available in the literature with those obtained in the chosen pool conditions. He discusses the synthesis of CdTe thick layers for which different methods are tested: static in potential, static in intensity, pulsed. The coatings obtained with a given potential and then with a given current are investigated. Finally, the influence of a thermal treatment in presence or absence of a sintering agent on the morphology, the chemical composition, and the crystalline and electric properties of the deposited material is discussed, and the results of the behaviour under X rays of a electrodeposited layer are presented

  18. Colorimetric visualization of tin corrosion: A method for early stage corrosion detection on printed circuit boards

    Verdingovas, Vadimas; Jellesen, Morten Stendahl; Ambat, Rajan

    2017-01-01

    A majority of printed circuit board surfaces are covered with tin, therefore tin corrosion under humid conditions and movement of tin ions under the influence of an electric field plays an important role in the corrosion failure development. Tracking tin corrosion products spread on the printed c...

  19. Electrodeposition, characterization and corrosion investigations of galvanic tin-zinc layers from pyrophosphate baths

    STOPIC MILENA D.; FRIEDRICH BERND G.

    2016-01-01

    Tin-zinc alloy deposits are recognized as a potential alternative to toxic cadmium as corrosion resistant coatings. Tin-zinc alloy layers offer outstanding corrosion protection for steel by combining the barrier protection of tin with the galvanic protection of zinc. Tin-zinc coatings have been used on the chassis of electrical and electronic apparatus and on critical automotive parts such as fuel and brake line components. In this study, tin-zinc alloy deposits were successfully prepared fro...

  20. Tin electrodeposition from sulfate solution containing a benzimidazolone derivative

    Said BAKKALI

    2016-11-01

    Full Text Available Tin electrodeposition in an acidic medium in the presence of N,N’-1,3-bis-[N-3-(6-deoxy-3-O-methyl-D-glucopyranose-6-yl-2-oxobenzimidazol-1-yl]-2-tetradecyloxypropane as an additive was investigated in this work. The adequate current density and the appropriate additive concentration were determined by gravimetric measurements. Chronopotentiometric curves showed that the presence of the additive caused an increase in the overpotential of tin reduction. The investigations by cyclic voltammetry technique revealed that, in the presence and in absence of the additive, there were two peaks, one in the cathodic side attributed to the reduction of Sn2+ and the other one in the anodic side assigned to the oxidation of tin previously formed during the cathodic scan. The surface morphology of the tin deposits was studied by scanning electron microscopy (SEM and XRD.

  1. Tin - an unlikely ally for silicon field effect transistors?

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2014-01-01

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows

  2. Diffuse scattering in metallic tin polymorphs

    Wehinger, Björn; Bosak, Alexeï; Piccolboni, Giuseppe; Krisch, Michael; Refson, Keith; Chernyshov, Dmitry; Ivanov, Alexandre; Rumiantsev, Alexander

    2014-01-01

    The lattice dynamics of the metallic tin β and γ polymorphs has been studied by a combination of diffuse scattering, inelastic x-ray scattering and density functional perturbation theory. The non-symmorphic space group of the β -tin structure results in unusual asymmetry of thermal diffuse scattering. Strong resemblance of the diffuse scattering intensity distribution in β and γ-tin were observed, reflecting the structural relationship between the two phases and revealing the qualitative similarity of the underlying electronic potential. The strong influence of the electron subsystem on inter-ionic interactions creates anomalies in the phonon dispersion relations. All observed features are described in great detail by the density functional perturbation theory for both β - and γ-tin at arbitrary momentum transfers. The combined approach delivers thus a complete picture of the lattice dynamics in harmonic description. (paper)

  3. Characterization of tin oxide nanoparticles synthesized via oxidation from metal

    Abruzzi, R.C.; Dedavid, B.A.; Pires, M.J.R.; Streicher, M.

    2014-01-01

    The tin oxide (SnO_2) is a promising material with great potential for applications such as gas sensors and catalysts. This oxide nanostructures show higher activation efficiency due to its larger effective surface. This paper presents the synthesis and characterization of the tin oxide in different conditions, via oxidation of pure tin with nitric acid. Results obtained from the characterization of SnO_2 powder by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDX), Particle size by Dynamic Light Scattering (DLS) and Infrared Spectroscopy (FTIR) indicated that the conditions were suitable for the synthesis to obtain manometric tin oxide granules with crystalline structure of rutile. (author)

  4. A Low Temperature Synthetic Route to Nanocrystalline TiN

    NICO

    This method may be extended to the synthesis of other metal nitrides. ... direct current magnetron sputtering17, and mechanical mill- ... recent years, autoclaved synthesis of TiN nanomaterials from ... 3.2 XPS Characterization of the Samples.

  5. Processing and characterization of new oxy-sulfo-telluride glasses in the Ge-Sb-Te-S-O system

    Smith, C.; Jackson, J.; Petit, L.; Rivero-Baleine, C.; Richardson, K.

    2010-01-01

    New oxy-sulfo-telluride glasses have been prepared in the Ge-Sb-Te-S-O system employing a two-step melting process which involves the processing of a chalcogenide glass (ChG) and subsequent melting with TeO 2 or Sb 2 O 3 . The progressive incorporation of O at the expense of S was found to increase the density and the glass transition temperature and to decrease the molar volume of the investigated oxy-sulfo-telluride glasses. We also observed a shift of the vis-NIR cut-off wavelength to longer wavelength probably due to changes in Sb coordination within the glass matrix and overall matrix polarizability. Using Raman spectroscopy, correlations have been shown between the formation of Ge- and Sb-based oxysulfide structural units and the S/O ratio. Lastly, two glasses with similar composition (Ge 20 Sb 6 S 64 Te 3 O 7 ) processed by melting the Ge 23 Sb 7 S 70 glass with TeO 2 or the Ge 23 Sb 2 S 72 Te 4 glass with Sb 2 O 3 were found to have slightly different physical, thermal, optical and structural properties. These changes are thought to result mainly from the higher moisture content and sensitivity of the TeO 2 starting materials as compared to that of the Sb 2 O 3 . - Graphical abstract: In this paper, we discuss our most recent findings on the processing and characterization of new ChG glasses prepared with small levels of Te, melted either with TeO 2 or Sb 2 O 3 powders. We explain how these new oxy-sulfo-telluride glasses are prepared and we correlate the physical, thermal and optical properties of the investigated glasses to the structure changes induced by the addition of oxygen in the Ge-Sb-S-Te glass network.

  6. Studies in group IV organometallic chemistry XXX. Synthesis of compounds containing tin---titanium and tin---zirconium bonds

    Creemers, H.M.J.C.; Verbeek, F.; Noltes, J.G.

    1968-01-01

    Starting from the tetrakis(diethylamino) derivatives of titanium and zirconium and pheyltin hydrides six intermetalic compounds contianing up to nine tin and titanium(or zirconium) atoms have been obtained by hydrostannolysis type reactions.

  7. Investigations of portable cadmium telluride (CdTe(Cl)) detectors for clinical studies with radioactive indicators

    Bojsen, J.

    1985-01-01

    The combination of small, portable γ-radiation-sensitive Cadmium Telluride (CdTE(Cl)) crystal detectors and portable solid state data storage memories makes it feasible to extend the measuring period in a number of clinical investigations based on the use of various radioisotopes and external detection. Blood sampling can be avoided in some cases. Continuous ambulatory monitoring of relevant physiological parameters is practicable, e.g. kidney function (GFR), left ventricular ejection fraction, subcutaneous blood flow, muscle blood flow and insulin absorption in diabetic patients. In the present methodological study the applicability of the 133-Xe washout technique to subcutaneous (s.c.) adipose tissue blood flow (SBF) has been investigated and adapted to the use of CdTe(Cl) detectors attached to the skin surface for the measurement of local 133-Xe-disappearance rate constants (k). Physical characterization of CdTe(Cl) detectors as γ-sensitive devices has been performed, and adequate counting sensitivities were found without detector energy-resolution properties. The CdTe(Cl) detectors are therefore suitable for single indicator studies. The measuring geometry of CdTe(Cl) detectors was studied and compared with that of stationary Sodium Iodide (NaI(Tl)) detectors in both phantom and in vivo investigations. The spatial properties of CdTe(Cl) detectors could to some extent be adjusted by pulse height discrimination and lead collimation. When long-term measurements were complicated by for instance physical activity of the patients, the small CdTe(Cl) detectors in general showed equal or better performance than the heavy and voluminous NaI(Tl) detectors. The free movement of the ambulatory patient and the avoidance of cable connections to stationary data-collecting systems gave improved possibilities for measurements of the relevant parameters. From this point of view, portable CdTe(Cl) detectors must be considered an important advance for radioactivity studies in

  8. A Fumonisins Immunosensor Based on Polyanilino-Carbon Nanotubes Doped with Palladium Telluride Quantum Dots

    Masikini, Milua; Mailu, Stephen N.; Tsegaye, Abebaw; Njomo, Njagi; Molapo, Kerileng M.; Ikpo, Chinwe O.; Sunday, Christopher Edozie; Rassie, Candice; Wilson, Lindsay; Baker, Priscilla G. L.; Iwuoha, Emmanuel I.

    2015-01-01

    An impedimetric immunosensor for fumonisins was developed based on poly(2,5-dimethoxyaniline)-multi-wall carbon nanotubes doped with palladium telluride quantum dots onto a glassy carbon surface. The composite was assembled by a layer-by-layer method to form a multilayer film of quantum dots (QDs) and poly(2,5-dimethoxyaniline)-multi-wall carbon nanotubes (PDMA-MWCNT). Preparation of the electrochemical immunosensor for fumonisins involved drop-coating of fumonisins antibody onto the composite modified glassy carbon electrode. The electrochemical impedance spectroscopy response of the FB1 immunosensor (GCE/PT-PDMA-MWCNT/anti-Fms-BSA) gave a linear range of 7 to 49 ng L−1 and the corresponding sensitivity and detection limits were 0.0162 kΩ L ng−1 and 0.46 pg L−1, respectively, hence the limit of detection of the GCE/PT-PDMA-MWCNT immunosensor for fumonisins in corn certified material was calculated to be 0.014 and 0.011 ppm for FB1, and FB2 and FB3, respectively. These results are lower than those obtained by ELISA, a provisional maximum tolerable daily intake (PMTDI) for fumonisins (the sum of FB1, FB2, and FB3) established by the Joint FAO/WHO expert committee on food additives and contaminants of 2 μg kg−1 and the maximum level recommended by the U.S. Food and Drug Administration (FDA) for protection of human consumption (2–4 mg L−1). PMID:25558993

  9. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  10. Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

    Williams, H.R., E-mail: hugo.williams@leicester.ac.uk [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ambrosi, R.M. [Space Research Centre, Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Chen, K. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Friedman, U. [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ning, H.; Reece, M.J. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Robbins, M.C.; Simpson, K. [European Thermodynamics Ltd., 8 Priory Business Park, Wistow Road, Kibworth LE8 0R (United Kingdom); Stephenson, K. [European Space Agency, ESTEC TEC-EP, Keplerlaan 1, 2201AZ Noordwijk (Netherlands)

    2015-03-25

    Highlights: • Nano-B{sub 4}C reinforced Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} p-type thermoelectric produced by SPS. • Addition of B{sub 4}C up to 0.2 vol% to SPS’d material has little effect on zT. • Vickers hardness improved by 27% by adding 0.2 vol% B{sub 4}C. • Fracture toughness of SPS material: K{sub IC} = 0.80 MPa m{sup 1/2} by SEVNB. • Mechanical properties much better than commercial directionally solidified material. - Abstract: The mechanical properties of bismuth telluride based thermoelectric materials have received much less attention in the literature than their thermoelectric properties. Polycrystalline p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} materials were produced from powder using spark plasma sintering (SPS). The effects of nano-B{sub 4}C addition on the thermoelectric performance, Vickers hardness and fracture toughness were measured. Addition of 0.2 vol% B{sub 4}C was found to have little effect on zT but increased hardness by approximately 27% when compared to polycrystalline material without B{sub 4}C. The K{sub IC} fracture toughness of these compositions was measured as 0.80 MPa m{sup 1/2} by Single-Edge V-Notched Beam (SEVNB). The machinability of polycrystalline materials produced by SPS was significantly better than commercially available directionally solidified materials because the latter is limited by cleavage along the crystallographic plane parallel to the direction of solidification.

  11. Spectroscopic, microscopic, and internal stress analysis in cadmium telluride grown by close-space sublimation

    Manciu, Felicia S.; Salazar, Jessica G.; Diaz, Aryzbe; Quinones, Stella A.

    2015-01-01

    High quality materials with excellent ordered structure are needed for developing photovoltaic and infrared devices. With this end in mind, the results of our research prove the importance of a detailed, comprehensive spectroscopic and microscopic analysis in assessing cadmium telluride (CdTe) characteristics. The goal of this work is to examine not only material crystallinity and morphology, but also induced stress in the deposit material. A uniform, selective growth of polycrystalline CdTe by close-space sublimation on patterned Si(111) and Si(211) substrates is demonstrated by scanning electron microscopy images. Besides good crystallinity of the samples, as revealed by both Raman scattering and Fourier transform infrared absorption investigations, the far-infrared transmission data also show the presence of surface optical phonon modes, which is direct evidence of confinement in such a material. The qualitative identification of the induced stress was achieved by performing confocal Raman mapping microscopy on sample surfaces and by monitoring the existence of the rock-salt and zinc-blende structural phases of CdTe, which were associated with strained and unstrained morphologies, respectively. Although the induced stress in the material is still largely due to the high lattice mismatch between CdTe and the Si substrate, the current results provide a direct visualization of its partial release through the relaxation effect at crystallite boundaries and of preferential growth directions of less strain. Our study, thus offers significant value for improvement of material properties, by targeting the needed adjustments in the growth processes. - Highlights: • Assessing the characteristics of CdTe deposited on patterned Si substrates • Proving the utility of confocal Raman microscopy in monitoring the induced stress • Confirming the partial stress release through the grain boundary relaxation effect • Demonstrating the phonon confinement effect in low

  12. The crystal structures and powder diffraction patterns of the uranium tellurides

    Snyder, R.L. (State Univ. of New York, Alfred, NY (USA). Inst. of Ceramic Superconductivity); Nichols, M.C.; Boehme, D.R. (Sandia National Labs., Livermore, CA (USA))

    1990-10-03

    A critical review of all of the reported structures and powder diffraction patterns in the uranium telluride system has been undertaken. Structures that are correct: Cubic -- UTe: no experimental pattern exists. Retain calculated 15--865. Cubic --U{sub 3}Te{sub 4}: retain the poor quality 12--610 but adopt the pattern calculated here. Cubic U{sub 2}Te{sub 3}: no experimental pattern exists. Adopt pattern calculated here. Orthorhombic UTe{sub 2}: Adopt the new pattern of Boehme et al. Monoclinic {alpha}UTe{sub 3} Adopt the new pattern of Boehme et al. Monoclinic {alpha}UTe{sub 3} Adopt the new pattern of Boehme et al. Orthorhombic {beta}UTe{sub 3}: Adopt pattern calculated here. Orthorhombic UTe{sub 5}: Adopt the new pattern of Boehme et al. Structures in need of refinement: Orthorhombic U{sub 2}Te{sub 3}:Adopt pattern calculated here over 34--807. Hexagonal U{sub 7}Te{sub 12}: Adopt pattern calculated here but retain 24--1368. Orthorhombic UTe{sub 1.78}: Adopt pattern calculated here and retain our modified 21--1404 reported for U{sub 4}Te{sub 7}. Orthorhombic UTe{sub 2.5}: Adopt pattern calculated here. Orthorhombic UTe{sub 3.4}: Accept recent pattern of Boehme et al. Phases for which no structures or reliable patterns exist: Orthorhombic U{sub 3}Te{sub 4}: no published pattern. Tetragonal U{sub 3}Te{sub 5}: three patterns 21--1407, 34--766 and 34--896 exit but all are of very poor quality. Phases which probably do not exist: Tetragonal UTe{sub 1.78}, Tetragonal UTe{sub 2}, Cubic UTe{sub 2} U{sub 3}Te{sub 7}(21--1402), U{sub 3}Te{sub 8}(21--1406).

  13. Laser Photolysis and Thermolysis of Organic Selenides and Tellurides for Chemical Gas-phase Deposition of Nanostructured Materials

    Josef Pola

    2009-03-01

    Full Text Available Laser radiation-induced decomposition of gaseous organic selenides and tellurides resulting in chemical deposition of nanostructured materials on cold surfaces is reviewed with regard to the mechanism of the gas-phase decomposition and properties of the deposited materials. The laser photolysis and laser thermolysis of the Se and Te precursors leading to chalcogen deposition can also serve as a useful approach to nanostructured chalcogen composites and IVA group (Si, Ge, Sn element chalcogenides provided that it is carried out simultaneously with laser photolysis or thermolysis of polymer and IVA group element precursor.

  14. Reaction of 1-bromo-3-chloropropane with tellurium and dimethyl telluride in the system of hydrazine hydrate-alkali

    Russavskaya, N.V.; Levanova, E.P.; Sukhomazova, Eh.N.; Grabel'nykh, V.A.; Elaev, A.V.; Klyba, L.V.; Zhanchipova, E.R.; Albanov, A.I.; Korotaeva, I.M.; Toryashinova, D.S.D.; Korchevin, N.A.

    2006-01-01

    A synthesis of oligomeric substance of thiocol type, the poly(trimethyleneditelluride), from 1-bromo-3-chloropropane and elemental tellurium is performed using a hydrazine hydrate-alkali system. Reductive splitting of the tellurocol followed by alkylation with methyl iodide give rise to preparation of bis(methyltelluro)propane, which was synthesized also from dimethyl telluride and 1,3-dihalopropanes using the N 2 H 4 ·H 2 O/KOH system. The reaction products were characterized by elementary analysis, NMR, and IR spectra. Mass spectra of the synthesized low molecular weight organotellurium compounds are considered [ru

  15. Precipitation in a lead calcium tin anode

    Perez-Gonzalez, Francisco A., E-mail: fco.aurelio@inbox.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia, Universidad Autonoma de Nuevo Leon (Mexico); Camurri, Carlos G., E-mail: ccamurri@udec.cl [Departamento de Ingenieria de Materiales, Universidad de Concepcion (Chile); Carrasco, Claudia A., E-mail: ccarrascoc@udec.cl [Departamento de Ingenieria de Materiales, Universidad de Concepcion (Chile); Colas, Rafael, E-mail: rafael.colas@uanl.edu.mx [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia, Universidad Autonoma de Nuevo Leon (Mexico)

    2012-02-15

    Samples from a hot rolled sheet of a tin and calcium bearing lead alloy were solution heat treated at 300 Degree-Sign C and cooled down to room temperature at different rates; these samples were left at room temperature to study natural precipitation of CaSn{sub 3} particles. The samples were aged for 45 days before analysing their microstructure, which was carried out in a scanning electron microscope using secondary and backscattered electron detectors. Selected X-ray spectra analyses were conducted to verify the nature of the precipitates. Images were taken at different magnifications in both modes of observation to locate the precipitates and record their position within the images and calculate the distance between them. Differential scanning calorimeter analyses were conducted on selected samples. It was found that the mechanical properties of the material correlate with the minimum average distance between precipitates, which is related to the average cooling rate from solution heat treatment. - Highlights: Black-Right-Pointing-Pointer The distance between precipitates in a lead alloy is recorded. Black-Right-Pointing-Pointer The relationship between the distance and the cooling rate is established. Black-Right-Pointing-Pointer It is found that the strengthening of the alloy depends on the distance between precipitates.

  16. Precipitation in a lead calcium tin anode

    Pérez-González, Francisco A.; Camurri, Carlos G.; Carrasco, Claudia A.; Colás, Rafael

    2012-01-01

    Samples from a hot rolled sheet of a tin and calcium bearing lead alloy were solution heat treated at 300 °C and cooled down to room temperature at different rates; these samples were left at room temperature to study natural precipitation of CaSn 3 particles. The samples were aged for 45 days before analysing their microstructure, which was carried out in a scanning electron microscope using secondary and backscattered electron detectors. Selected X-ray spectra analyses were conducted to verify the nature of the precipitates. Images were taken at different magnifications in both modes of observation to locate the precipitates and record their position within the images and calculate the distance between them. Differential scanning calorimeter analyses were conducted on selected samples. It was found that the mechanical properties of the material correlate with the minimum average distance between precipitates, which is related to the average cooling rate from solution heat treatment. - Highlights: ► The distance between precipitates in a lead alloy is recorded. ► The relationship between the distance and the cooling rate is established. ► It is found that the strengthening of the alloy depends on the distance between precipitates.

  17. Liquid tin limiter for FTU tokamak

    Vertkov, A., E-mail: avertkov@yandex.ru [JSC “Red Star”, Moscow (Russian Federation); Lyublinski, I. [JSC “Red Star”, Moscow (Russian Federation); NRNU MEPhI, Moscow (Russian Federation); Zharkov, M. [JSC “Red Star”, Moscow (Russian Federation); Mazzitelli, G.; Apicella, M.L.; Iafrati, M. [Associazione EURATOM-ENEA sulla Fusione, C. R. Frascati, Frascati, Rome, Italy, (Italy)

    2017-04-15

    Highlights: • First steady state operating liquid tin limiter TLL is under study on FTU tokamak. • The cooling system with water spray coolant for TLL has been developed and tested. • High corrosion resistance of W and Mo in molten Sn confirmed up to 1000 °C. • Wetting process with Sn has been developed for Mo and W. - Abstract: The liquid Sn in a matrix of Capillary Porous System (CPS) has a high potential as plasma facing material in steady state operating fusion reactor owing to its physicochemical properties. However, up to now it has no experimental confirmation in tokamak conditions. First steady state operating limiter based on the CPS with liquid Sn installed on FTU tokamak and its experimental study is in progress. Several aspects of the design, structural materials and operation parameters of limiter based on tungsten CPS with liquid Sn are considered. Results of investigation of corrosion resistance of Mo and W in Sn and their wetting process are presented. The heat removal for limiter steady state operation is provided by evaporation of flowing gaswater spray. The effectiveness of such heat removal system is confirmed in modelling tests with power flux up to 5 MW/m2.

  18. Tin( ii ) ketoacidoximates: synthesis, X-ray structures and processing to tin( ii ) oxide

    Khanderi, Jayaprakash

    2015-10-21

    Tin(ii) ketoacidoximates of the type [HONCRCOO]Sn (R = Me 1, CHPh 2) and (MeONCMeCOO)Sn] NH·2HO 3 were synthesized by reacting pyruvate- and hydroxyl- or methoxylamine RONH (R = H, Me) with tin(ii) chloride dihydrate SnCl·2HO. The single crystal X-ray structure reveals that the geometry at the Sn atom is trigonal bipyramidal in 1, 2 and trigonal pyramidal in 3. Inter- or intramolecular hydrogen bonding is observed in 1-3. Thermogravimetric (TG) analysis shows that the decomposition of 1-3 to SnO occurs at ca. 160 °C. The evolved gas analysis during TG indicates complete loss of the oximato ligand in one step for 1 whereas a small organic residue is additionally removed at temperatures >400 °C for 2. Above 140 °C, [HONC(Me)COO]Sn (1) decomposes in air to spherical SnO particles of size 10-500 nm. Spin coating of 1 on Si or a glass substrate followed by heating at 200 °C results in a uniform film of SnO. The band gap of the produced SnO film and nanomaterial was determined by diffuse reflectance spectroscopy to be in the range of 3.0-3.3 eV. X-ray photoelectron spectroscopy indicates surface oxidation of the SnO film to SnO in ambient atmosphere.

  19. Computational analysis of interfacial attachment kinetics and transport phenomena during liquid phase epitaxy of mercury cadmium telluride

    Rasin, Igal; Brandon, Simon [Dept. of Chemical Engineering, Technion, Haifa 32000 (Israel); Ben Dov, Anne; Grimberg, Ilana; Klin, Olga; Weiss, Eliezer [SCD-Semi-Conductor Devices, P.O. Box 2250/99, Haifa 31021 (Israel)

    2010-07-01

    Deposition of mercury cadmium telluride (MCT) thin films, on lattice matched cadmium zinc telluride substrates, is often achieved via Liquid Phase Epitaxy (LPE). The yield and quality of these films, required for the production of infrared detector devices, is to a large extent limited by lack of knowledge regarding details of physical phenomena underlying the deposition process. Improving the understanding of these phenomena and their impact on the quality of the resultant films is therefore an important goal which can be achieved through relevant computational and/or experimental studies. We present a combined computational and experimental effort aimed at elucidating physical phenomena underlying the LPE of MCT via a slider growth process. The focus of the presentation will be results generated by a time-dependent three-dimensional model of mass transport, fluid flow, and interfacial attachment kinetics, which we have developed and applied in the analysis of this LPE process. These results, combined with experimental analyses, lead to an improved understanding of the role of different transport and kinetic phenomena underlying this growth process.

  20. Selective Recovery of Mushistonite from Gravity Tailings of Copper–Tin Minerals in Tajikistan

    Lei Sun; Yuehua Hu; Wei Sun; Zhiyong Gao; Mengjie Tian

    2017-01-01

    Tajikistan has abundant copper–tin resources. In this study, mineralogical analysis of copper–tin ores from the Mushiston deposit of Tajikistan indicates that tin mainly occurred in mushistonite, cassiterite, and stannite, while copper mainly occurred in mushistonite, malachite, azurite, and stannite. The total grades of tin (Sn) and copper (Cu) were 0.65% and 0.66%, respectively, and the dissemination size of copper–tin minerals ranged from 4 μm to over 200 μm. Coarse particles of copper–tin...

  1. Investigation of Surface Phenomena in Shocked Tin in Converging Geometry

    Rousculp, Christopher L. [Los Alamos National Laboratory; Oro, David Michael [Los Alamos National Laboratory; Griego, Jeffrey Randall [Los Alamos National Laboratory; Turchi, Peter John [Los Alamos National Laboratory; Reinovsky, Robert Emil [Los Alamos National Laboratory; Bradley, Joseph Thomas [Los Alamos National Laboratory; Cheng, Baolian [Los Alamos National Laboratory; Freeman, Matthew Stouten [Los Alamos National Laboratory; Patten, Austin Randall [Los Alamos National Laboratory

    2016-03-21

    There is great interest in the behavior of the free surface of tin under shock loading. While it is known that meso-scale surface imperfections can seed the Richtmyer- Meshkov Instability (RMI) for a surface that is melted on release, much less is known about a tin surface that is solid, but plastically deforming. Here material properties such as shear and yield strength come into play especially in converging geometry. Previous experiments have been driven by direct contact HE. Usually a thin, flat target coupon is fielded with various single-mode, sinusoidal, machined, profiles on the free surface. The free surface is adjacent to either vacuum or an inert receiver gas. Most of these previous driver/target configurations have been nominal planer geometry. With modern HE it has been straightforward to shock tin into melt on release. However it has been challenging to achieve a low enough pressure for solid state on release. Here we propose to extend the existing base of knowledge to include the behavior of the free surface of tin in cylindrical converging geometry. By shock loading a cylindrical tin shell with a magnetically driven cylindrical liner impactor, the free surface evolution can be diagnosed with proton radiography. With the PHELIX capacitor bank, the drive can easily be varied to span the pressure range to achieve solid, mixed, and liquid states on release. A conceptual cylindrical liner and target is shown in Figure 1.

  2. Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

    Duraia, El-Shazly M.A., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansorov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan)

    2009-11-15

    In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor-liquid-solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.

  3. Scientific/Technical Report: Improvement in compensation and crystal growth of cadmium zinc telluride radiation detectors

    Kelvin G. Lynn; Kelly A. Jones

    2007-01-01

    Comparison of actual accomplishments with goals and objectives: (1) Growth of 12 ingots--Washington State University (WSU) more than met this goal for the project by growing 12 final ingots for the year. Nine of the twelve crystal growth ingots resolved gamma radiation at room temperature. The other three ingots where resistivity of ∼ 3 x 10 8 Ohm*cm for CG32a, CG36, and CG42 lower than expected, however none of these were tried with blocking contacts. All ingots were evaluated from tip to heel. In these three cases, the group III, dopant Aluminum (Al) was not detected to a level to compensate the Cd vacancies in the cadmium zinc telluride (CZT) thus the ingots were lower resistivity. The nine ingots that were successful radiation detectors averaged a bulk resistivity of 1.25 x 10 10 Ohm*cm and with a average μτ product for electrons of ∼ 2 x 10 -4 cm 2 /V with a 1/4 microsecond shaping time with samples ∼2 mm in thickness. (2) Attempt new compensations techniques--WSU also met this goal. Several doping schemes were attempted and investigated with various amounts of excess Tellurium added to the growth. The combination of Al and Erbium (Er) were first attempted for these ingots and subsequently CG34 was grown with Al, Er and Holmium. These compensation techniques produced radiation detectors and are currently under investigation. These growths were made with significant different doping levels to determine the affect of the dopants. CG43 was doped with Indium and Er. Indium was introduced instead of Al to determine if Indium is more soluble than Al for CZT and was less oxidized. This may decrease the amount of low resistivity ingots grown by doping with Indium instead of Al. (3) Grow large single crystals--Several changes in approach occurred in the crystal growth furnace. Steps were taken to maximize the crystal growth interface during growth by modifying liners, quartz, heat sinks, crucibles and various growth steps and temperature profiles. CG39 ingot

  4. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    Fan J

    2016-07-01

    Full Text Available Junpeng Fan,1–4 Ming Shao,1–4 Lu Lai,3–5 Yi Liu,3–5 Zhixiong Xie1–4,6 1College of Life Sciences, Wuhan University, 2Hubei Provincial Cooperative Innovation Center of Industrial Fermentation,3State Key Laboratory of Virology, 4Key Laboratory of Analytical Chemistry for Biology and Medicine (MOE, 5College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 6School of Life Science and Technology, Hubei Engineering University, Xiaogan, People’s Republic of China Abstract: Cadmium telluride quantum dots (CdTe QDs are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator, combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. Keywords: CdTe quantum dots, Saccharomyces cerevisiae, toxicity, autophagy

  5. Enhanced thermoelectric properties of metal film on bismuth telluride-based materials

    Chao, Wen Hsuan; Chen, Yi Ray; Tseng, Shih Chun; Yang, Ping Hsing; Wu, Ren Jye; Hwang, Jenn Yeu

    2014-01-01

    Diffusion barriers have a significant influence on the reliability and life time of thermoelectric modules. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified that Ni migrates to bismuth telluride-based material during high temperature cycles and causes a loss in efficacy. In this paper, the influence of metal layers coated to p-type and n-type Bi 2 Te 3 on the interface characterization and thermoelectric property is studied using a RF magnetron sputtering. The findings from this study demonstrate the structural and thermoelectric properties of p-type and n-type Bi 2 Te 3 coated with different metal layers. The crystalline phase and compositional change of the interface between the Bi 2 Te 3 materials and the metal layers were determined using an X-ray diffractometer and scanning electron microscopy with energy dispersive spectroscopy. Formation of NiTe was observed in the sample of Ni/p-type Bi 2 Te 3 based films post-annealed in an N 2 atmosphere at 200 °C. In contrast, no Co x Te y was formed in the sample of Co/p-type Bi 2 Te 3 based films post-annealed at 200 °C. For as-deposited Ni/p-type and n-type Bi 2 Te 3 based legs, the Ni slightly diffused into the Bi 2 Te 3 based legs. A similar phenomenon also occurred in the as-deposited Co/p-type and n-type Bi 2 Te 3 based legs. The Seebeck coefficients of the Co contacts on the Bi 2 Te 3 based material displayed better behavior than those of the Ni contacts on the Bi 2 Te 3 based legs. Thus Co could be a suitable diffusion barrier for bulk Bi 2 Te 3 based material. The observed effects on the thermoelectric and structural properties of metal/Bi 2 Te 3 based material are crucial for understanding the interface between the diffusion barrier and thermoelectric materials. - Highlights: • Interface characterization of metal coated to p-type and n-type Bi 2 Te 3 is studied. • We examined the phase transformation of metal/Bi 2 Te 3 based films

  6. Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

    Adams, Aaron Lee

    Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

  7. Unexpected Au Alloying in Tailoring In-Doped SnTe Nanostructures with Gold Nanoparticles

    Samuel Atherton

    2017-03-01

    Full Text Available Materials with strong spin-orbit interaction and superconductivity are candidates for topological superconductors that may host Majorana fermions (MFs at the edges/surfaces/vortex cores. Bulk-superconducting carrier-doped topological crystalline insulator, indium-doped tin telluride (In-SnTe is one of the promising materials. Robust superconductivity of In-SnTe nanostructures has been demonstrated recently. Intriguingly, not only 3-dimensional (3D nanostructures but also ultra-thin quasi-2D and quasi-1D systems can be grown by the vapor transport method. In particular, nanostructures with a controlled dimension will give us a chance to understand the dimensionality and the quantum confinement effects on the superconductivity of the In-SnTe and may help us work on braiding MFs in various dimensional systems for future topological quantum computation technology. With this in mind, we employed gold nanoparticles (GNPs with well-identified sizes to tailor In-SnTe nanostructures grown by vapor transport. However, we could not see clear evidence that the presence of the GNPs is necessary or sufficient to control the size of the nanostructures. Nevertheless, it should be noted that a weak correlation between the diameter of GNPs and the dimensions of the smallest nanostructures has been found so far. To our surprise, the ones grown under the vapor–liquid–solid mechanism, with the use of the GNPs, contained gold that is widely and inhomogeneously distributed over the whole body.

  8. Strategies to Reduce Tin and Other Metals in Electronic Cigarette Aerosol.

    Monique Williams

    Full Text Available Metals are present in electronic cigarette (EC fluid and aerosol and may present health risks to users.The objective of this study was to measure the amounts of tin, copper, zinc, silver, nickel and chromium in the aerosol from four brands of EC and to identify the sources of these metals by examining the elemental composition of the atomizer components.Four brands of popular EC were dissected and the cartomizers were examined microscopically. Elemental composition of cartomizer components was determined using integrated energy dispersive X-ray microanalysis, and the concentrations of the tin, copper, zinc silver, nickel, and chromium in the aerosol were determined for each brand using inductively coupled plasma optical emission spectroscopy.All filaments were made of nickel and chromium. Thick wires were copper coated with either tin or silver. Wires were joined to each other by tin solder, brazing, or by brass clamps. High concentrations of tin were detected in the aerosol when tin solder joints were friable. Tin coating on copper wires also contributed to tin in the aerosol.Tin concentrations in EC aerosols varied both within and between brands. Tin in aerosol was reduced by coating the thick wire with silver rather than tin, placing stable tin solder joints outside the atomizing chamber, joining wires with brass clamps or by brazing rather than soldering wires. These data demonstrate the feasibility of removing tin and other unwanted metals from EC aerosol by altering designs and using materials of suitable quality.

  9. Strategies to Reduce Tin and Other Metals in Electronic Cigarette Aerosol

    Williams, Monique; To, An; Bozhilov, Krassimir; Talbot, Prue

    2015-01-01

    Background Metals are present in electronic cigarette (EC) fluid and aerosol and may present health risks to users. Objective The objective of this study was to measure the amounts of tin, copper, zinc, silver, nickel and chromium in the aerosol from four brands of EC and to identify the sources of these metals by examining the elemental composition of the atomizer components. Methods Four brands of popular EC were dissected and the cartomizers were examined microscopically. Elemental composition of cartomizer components was determined using integrated energy dispersive X-ray microanalysis, and the concentrations of the tin, copper, zinc silver, nickel, and chromium in the aerosol were determined for each brand using inductively coupled plasma optical emission spectroscopy. Results All filaments were made of nickel and chromium. Thick wires were copper coated with either tin or silver. Wires were joined to each other by tin solder, brazing, or by brass clamps. High concentrations of tin were detected in the aerosol when tin solder joints were friable. Tin coating on copper wires also contributed to tin in the aerosol. Conclusions Tin concentrations in EC aerosols varied both within and between brands. Tin in aerosol was reduced by coating the thick wire with silver rather than tin, placing stable tin solder joints outside the atomizing chamber, joining wires with brass clamps or by brazing rather than soldering wires. These data demonstrate the feasibility of removing tin and other unwanted metals from EC aerosol by altering designs and using materials of suitable quality. PMID:26406602

  10. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

    2017-01-01

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  11. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

    Goto, Masahiro, E-mail: goto.masahiro@nims.go.jp [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sasaki, Michiko [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Xu, Yibin [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Materials Database Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Zhan, Tianzhuo [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Isoda, Yukihiro [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Shinohara, Yoshikazu [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2017-06-15

    Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

  12. Cyclic voltammetric study of tin hexacyanoferrate for aqueous battery applications

    Denys Gromadskyi

    2016-09-01

    Full Text Available A hybrid composite containing 65 mass % of tin hexacyanoferrate mixed with 35 mass % of carbon nanotubes has been synthesized and its electrochemical behavior as a negative electrode in alkali metal-ion batteries has been studied in 1 mol L-1 aqueous solution of sodium sulfate. The specific capacity of pure tin hexacyanoferrate is 58 mAh g-1, whereas the specific capacity normalized per total electrode mass of the composite studied reaches 34 mAh g-1. The estimated maximal specific power of an aqueous alkali-metal ion battery with a tin hexacyanoferrate electrode is ca. 3.6 kW kg-1 being comparable to characteristics of industrial electric double-layer capacitors. The maximal specific energy accumulated by this battery may reach 25.6 Wh kg-1 at least three times exceeding the specific energy for supercapacitors.

  13. Vanadocene reactions with mixed acylates of silicon, germanium and tin

    Latyaeva, V.N.; Lineva, A.N.; Zimina, S.V.; Gordetsov, A.S.; Dergunov, Yu.I.

    1981-01-01

    Vanadocene interaction with di-and tri-alkyl (aryl)-derivatives of silicon, tin and germanium is studied. Dibutyltin dibenzoate under mild conditions (20 deg C, toluene) oxidates vanadocene to [CpV(OCOC 6 H 5 ) 2 ] 2 , at that, the splitting off of one Cp group in the form of cyclopentadiene and formation of the products of tin-organic fragment disproportionation (tributyltin benzoate, dibutyltin, metallic tin) take place. Tributyltin benzoate oxidates vanadocene at the mole ratio 2:1 and during prolong heating (120 deg C) in the absence of the solvent, [CpV(OCOC 6 H 5 ) 2 ] 2 and hexabutyldistannate are the products of the reaction. Acetates R 3 SnOCOCH 3 react in the similar way. The reactivity of mono- and diacylates of germanium and silicon decreases in the series of derivatives Sn>Ge>Si [ru

  14. Tin - an unlikely ally for silicon field effect transistors?

    Hussain, Aftab M.

    2014-01-13

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

    Malinovskaya Tatyana

    2017-01-01

    Full Text Available The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

  16. Trace hydrogen extraction from liquid lithium tin alloy

    Xie Bo; Hu Rui; Xie Shuxian; Weng Kuiping

    2010-01-01

    In order to finish the design of tritium extraction system (TES) of fusion fission hybrid reactor (FFHR) tritium blanket, involving the dynamic mathematical model of liquid metal in contact with a gaseous atmosphere, approximate mathematical equation of tritium in lithium tin alloy was deduced. Moreover, carrying process used for trace hydrogen extraction from liquid lithium tin alloy was investigated with hydrogen being used to simulate tritium in the study. The study results indicate that carrying process is effective way for hydrogen extraction from liquid lithium tin alloy, and the best flow velocity of carrier gas is about 4 L/min under 1 kg alloy temperatures and carrying numbers are the main influencing factors of hydrogen number. Hydrogen extraction efficiency can reach 85% while the alloy sample is treated 6 times at 823 K. (authors)

  17. Recovery of antimony-125 from tin-124 irradiated by neutrons

    Baluev, A.V.; Mityakhina, V.S.; Krasnikov, L.V.; Galkin, B.Ya.; Besnosyuk, V.I.

    2003-01-01

    Separation of 125 Sb from tin using highly basic, medium-basic, and weakly basic ion-exchangers was studied. The best results were obtained for AN-31 weakly basic anion exchanger. The yield of 125 Sb was 95 -98 % of the initial activity, the yield of tin, 98 ± 0.5% of the initial amount. The separation coefficient is 10 6 -10 7 for one cycle. A procedure based on ion exchange was developed. Extraction procedures of separation of 125 Sb from tin were studied. Isoamyl alcohol, ethyl acetate, and di-n-butyl ether were used as extracting agents. The most efficient extracting agent is di-n-butyl ether. Carrier-free radiochemically pure sample of 125 Sb was produced. More than 20 mCi of the target product was recovered. The extraction recovery procedure of 125 Sb has been developed. (author)

  18. Low-temperature Synthesis of Tin(II) Oxide From Tin(II) ketoacidoximate Precursor

    Alshankiti, Buthainah

    2015-04-01

    Sn (II) oxide finds numerous applications in different fields such as thin film transistors1, solar cells2 and sensors.3 In this study we present the fabrication of tin monoxide SnO by using Sn (II) ketoacid oximate complexes as precursors. Tin (II) ketoacidoximates of the type [HON=CRCOO]2Sn where R= Me 1, R= CH2Ph 2, and [(MeON=CMeCOO)3Sn]- NH4 +.2H2O 3 were synthesized by in situ formation of the ketoacid oximate ligand. The crystal structures were determined via single crystal X- ray diffraction of the complexes 1-3 revealed square planar and square pyramidal coordination environments for the Sn atom. Intramolecular hydrogen bonding is observed in all the complexes. Furthermore, the complexes were characterized by Infrared (IR), Nuclear Magnetic Resonance (NMR) and elemental analysis. From thermogravimetric analysis of 1-3, it was found that the complexes decomposed in the range of 160 – 165 oC. Analysis of the gases evolved during decomposition indicated complete loss of the oximato ligand in one step and the formation of SnO. Spin coating of 1 on silicon or glass substrate show uniform coating of SnO. Band gaps of SnO films were measured and found to be in the range of 3.0 – 3.3 eV by UV-Vis spectroscopy. X-ray photoelectron spectroscopy indicated surface oxidation of the SnO film. Heating 1 above 140 oC in air gives SnO of size ranging from 10 – 500 nm and is spherical in shape. The SnO nanomaterial is characterized by powder X-ray diffraction(XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM).

  19. Electrical Properties of Electrospun Sb-Doped Tin Oxide Nanofibers

    Leon-Brito, Neliza; Melendez, Anamaris; Ramos, Idalia; Pinto, Nicholas J; Santiago-Aviles, Jorge J

    2007-01-01

    Transparent and conducting tin oxide fibers are of considerable interest for solar energy conversion, sensors and in various electrode applications. Appropriate doping can further enhance the conductivity of the fibers without loosing optical transparency. Undoped and antimony-doped tin oxide fibers have been synthesized by our group in previous work using electrospinning and metallorganic decomposition techniques. The undoped tin oxide fibers were obtained using a mixture of pure tin oxide sol made from tin (IV) chloride : water : propanol : isopropanol at a molar ratio of 1:9:9:6, and a viscous solution made from poly(ethylene oxide) (PEO) and chloroform at a ratio of 200 mg PEO/10 mL chloroform. In this work, antimony doped fibers were obtained by adding a dopant solution of antimony trichloride and isopropanol at a ratio of 2.2812 g antimony trichloride/10 ml isopropanol to the original tin oxide precursor solution. The Sb concentration in the precursor solution is 1.5%. After deposition, the fibers were sintered 600deg. C in air for two hours. The electrical conductivity of single fibers measured at room temperature increases by up to three orders of magnitude when compared to undoped fibers prepared using the same method. The resistivity change as a function of the annealing temperature can be attributed to the thermally activated formation of a nearly stoichoimetric solid. The resistivity of the fibers changes monotonically with temperature from 714Ω-cm at 2 K to 0.1Ω-cm at 300 K. In the temperature range from 2 to 8 K the fibers have a positive magnetoresistance (MR) with the highest value of 155 % at 2 K and ±9 T. At temperatures of 10 and 12 K the sign of MR changes to negative values for low magnetic fields and positive for high magnetic fields. For higher temperatures (15 K and above) the MR becomes negative and its magnitude decreases with temperature

  20. Obtainment of SnO2 for utilization of sensors by coprecipitation of tin salts

    Masetto, S.R.; Longo, E.

    1990-01-01

    Niobia doped tin dioxide was prepared by precipitation of tin dioxide II and IV using ammonium hydroxide. The powders were characterized by X-ray diffraction, particle size distribution and infra-red spectroscopy. (author) [pt

  1. Moessbauer and NMR study of novel Tin(IV)-lactames

    Kuzmann, Erno; Szalay, Roland; Homonnay, Zoltan, E-mail: homonnay@ludens.elte.hu; Nagy, Sandor [Eoetvoes Lorand University, Institute of Chemistry (Hungary)

    2012-03-15

    N-tributylstannylated 2-pyrrolidinone was reacted with tributyltin triflate in different molar ratios and the complex formation monitored using {sup 1}H-NMR, {sup 13}C-NMR and {sup 119}Sn Moessbauer spectroscopy. Comparing the carbon NMR and tin Moessbauer results, a reaction scheme is suggested for the complexation which assumes the formation of a simultaneously O- and N-tributylstannylated pyrrolidinone cation. The formation of the only O-stannylated pyrrolidinone is also assumed to account for the non-constant Moessbauer parameters of the two tin environments in the distannylated pyrrolidinone cation when the ratio of tributyltin triflate is increased in the reaction.

  2. Thermal interaction for molten tin dropped into water

    Arakeri, V.H.; Catton, I.; Kastenberg, W.E.; Plesset, M.S.

    1978-03-01

    Multiflash photography with extremely short duration exposure times per flash was used to observe the interaction of molten tin dropped into a water bath. Detailed photographic evidence is presented which demonstrates that transition, or nucleate boiling, is a possible triggering mechanism for vapor explosions. It was also found that the thermal constraints required to produce vapor explosions could be relaxed by introducing a stable thermal stratification within the coolant. In the present work, the threshold value of the initial tin temperature required for vapor explosion was reduced from about 500 to 343/sup 0/C.

  3. Thermal interaction for molten tin dropped into water

    Arakeri, V.H.; Catton, I.; Kastenberg, W.E.; Plesset, M.S.

    1978-01-01

    Multiflash photography with extremely short duration exposure times per flash has been used to observe the interaction of molten tin dropped into a water bath. Detailed photographic evidence is presented which demonstrates that transition, or nucleate boiling, is a possible triggering mechanism for vapour explosions. It was also found that the thermal constraints required to produce vapour explosions could be relaxed by introducing a stable thermal stratification within the coolant. In the present work, the threshold value of the initial tin temperature required for vapour explosion was reduced from about 500 to 343 0 C. (author)

  4. Discovery of the calcium, indium, tin, and platinum isotopes

    Amos, S.; Gross, J.L.; Thoennessen, M.

    2011-01-01

    Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. → Summary of author, journal, year, place and country of discovery for each isotope. → Brief description of discovery history of each isotope.

  5. Hydrothermal synthesis of tungsten doped tin dioxide nanocrystals

    Zhou, Cailong; Li, Yufeng; Chen, Yiwen; Lin, Jing

    2018-01-01

    Tungsten doped tin dioxide (WTO) nanocrystals were synthesized through a one-step hydrothermal method. The structure, composition and morphology of WTO nanocrystals were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, UV-vis diffuse reflectance spectra, zeta potential analysis and high-resolution transmission electron microscopy. Results show that the as-prepared WTO nanocrystals were rutile-type structure with the size near 13 nm. Compared with the undoped tin dioxide nanocrystals, the WTO nanocrystals possessed better dispersity in ethanol phase and formed transparent sol.

  6. An Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers. Part 2

    Courey, Karim; Wright, Clara; Asfour, Shihab; Onar, Arzu; Bayliss, Jon; Ludwig, Larry

    2009-01-01

    In this experiment, an empirical model to quantify the probability of occurrence of an electrical short circuit from tin whiskers as a function of voltage was developed. This empirical model can be used to improve existing risk simulation models. FIB and TEM images of a tin whisker confirm the rare polycrystalline structure on one of the three whiskers studied. FIB cross-section of the card guides verified that the tin finish was bright tin.

  7. PHOTOELECTROCHEMICAL SOLAR ENERGY CONVERSION ...

    Preferred Customer

    on indium-doped tin oxide (ITO) used as a photoactive electrode; amorphous ... The polymer electrolyte was prepared by dissolving 309 mg of POMOE in 25 mL .... The VOC of Bulk heterojunction (BHJ) based solar cells is strongly correlated ...

  8. Telomere dysfunction and cell survival: Roles for distinct TIN2-containing complexes

    Kim, Sahn-ho; Davalos, Albert R.; Heo, Seok-Jin; Rodier, Francis; Zou, Ying; Beausejour, Christian; Kaminker, Patrick; Yannone, Steven M.; Campisi, Judith

    2007-10-02

    Telomeres are maintained by three DNA binding proteins (TRF1, TRF2 and POT1), and several associated factors. One factor, TIN2, binds TRF1 and TRF2 directly and POT1 indirectly. Along with two other proteins, TPP1 and hRap1, these form a soluble complex that may be the core telomere maintenance complex. It is not clear whether sub-complexes also exist in vivo. We provide evidence for two TIN2 sub-complexes with distinct functions in human cells. We isolated these two TIN2 sub-complexes from nuclear lysates of unperturbed cells and cells expressing TIN2 mutants TIN2-13, TIN2-15C, which cannot bind TRF2 or TRF1, respectively. In cells with wild-type p53 function, TIN2-15C was more potent than TIN2-13 in causing telomere uncapping and eventual growth arrest. In cells lacking p53 function, TIN2-15C was more potent than TIN2-13 in causing telomere dysfunction and cell death. Our findings suggest that distinct TIN2 complexes exist, and that TIN2-15C-sensitive subcomplexes are particularly important for cell survival in the absence of functional p53.

  9. Telomere dysfunction and cell survival: roles for distinctTIN2-containing complexes

    Kim, Sahn-Ho; Davalos, Albert R.; Heo, Seok-Jin; Rodier, Francis; Beausejour, Christian; Kaminker, Patrick; Campisi, Judith

    2006-11-07

    Telomeres are maintained by three DNA binding proteins, TRF1, TRF2 and POT1, and several associated factors. One factor, TIN2, binds TRF1 and TRF2 directly and POT1 indirectly. These and two other proteins form a soluble complex that may be the core telomere-maintenance complex. It is not clear whether subcomplexes exist or function in vivo. Here, we provide evidence for two TIN2 subcomplexes with distinct functions in human cells. TIN2 ablation by RNA interference caused telomere uncapping and p53-independent cell death in all cells tested. However, we isolated two TIN2 complexes from cell lysates, each selectively sensitive to a TIN2 mutant (TIN2-13, TIN2-15C). In cells with wild-type p53 function, TIN2-15C was more potent than TIN2-13 in causing telomere uncapping and eventual growth arrest. In cells lacking p53 function, TIN215C more than TIN2-13 caused genomic instability and cell death. Thus, TIN2 subcomplexes likely have distinct functions in telomere maintenance, and may provide selective targets for eliminating cells with mutant p53.

  10. The tin mining and heavy mineral processing industry in the Kinta Valley, Perak, Malaysia

    Lee Swee Ching

    1994-01-01

    Overview of the tin mining and heavy mineral processing in the Kinta Valley, Perak, Malaysia was presented. Amang, a mixture composed of tin ore, sand, ilmenite, monazite, zircon, xenotime, struvite, etc , as a product from tin mining activities was discussed too in this paper

  11. 77 FR 5767 - Certain Tin Mill Products From Japan: Rescission of Antidumping Duty Administrative Review

    2012-02-06

    ... DEPARTMENT OF COMMERCE International Trade Administration [A-588-854] Certain Tin Mill Products... duty order covering certain tin mill products from Japan. The period of review is August 1, 2010... parties to request an administrative review of the antidumping duty order on certain tin mill products...

  12. 76 FR 14902 - Certain Tin Mill Products From Japan: Rescission of Antidumping Duty Administrative Review

    2011-03-18

    ... DEPARTMENT OF COMMERCE International Trade Administration [A-588-854] Certain Tin Mill Products... duty order covering certain tin mill products from Japan. The period of review is August 1, 2009... parties to request an administrative review of the antidumping duty order on certain tin mill products...

  13. 77 FR 34938 - Certain Tin Mill Products From Japan: Continuation of Antidumping Duty Order

    2012-06-12

    ... DEPARTMENT OF COMMERCE International Trade Administration [A-588-854] Certain Tin Mill Products... duty order on certain tin mill products from Japan would likely lead to continuation or recurrence of...: Background On August 28, 2000, the Department published the antidumping duty order on certain tin mill...

  14. NASA Goddard Space Flight Center Tin Whisker (and Other Metal Whisker) Homepage

    Brusse, Jay; Sampson, Mike; Leidecker, Henning; Kadesch, Jong

    2004-01-01

    This website provides information about tin whiskers and related research. The independent research performed during the past 50+ years is so vast that it is impractical to cover all aspects of tin whiskers in this one resource. Therefore, the absence of information in this website about a particular aspect of tin whiskers should NOT be construed as evidence of absence.

  15. Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductors

    Skipetrov, E.P.; Pichugin, N.A.; Slyn'ko, E.I.; Slyn'ko, V.E.

    2011-01-01

    The crystal structure, composition, galvanomagnetic and oscillatory properties of the Pb 1-x-y Sn x Cr y Te (x = 0, 0.05-0.30, y ≤ 0.01) alloys have been investigated with varying matrix composition and chromium impurity concentration. It is shown that the chromium impurity atoms dissolve in the crystal lattice at least up to 1 mol.%. The following increase of the chromium concentration leads to the appearance of microscopic regions enriched with chromium and inclusions of Cr-Te compounds. A decrease of the hole concentration, a p-n-conversion of the conductivity type and a pinning of the Fermi level by the chromium resonant level are observed with increasing chromium content. Initial rates of changes in the free carrier concentration on doping are determined. The dependences of electron concentration and Fermi level on tin content are calculated by the two-band Kane dispersion relation. A diagram of electronic structure rearrangement for the chromium-doped alloys with varying the matrix composition is proposed.

  16. Irradiation-induced doping of Bismuth Telluride Bi2Te3

    Rischau, Carl Willem

    2014-01-01

    Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

  17. Interesterification of rapeseed oil catalyzed by tin octoate

    Galia, Alessandro; Centineo, Alessio; Saracco, Guido; Schiavo, Benedetto; Scialdone, Onofrio

    2014-01-01

    The interesterification of rapeseed oil was performed for the first time by using tin octoate as Lewis acid homogeneous catalysts and methyl or ethyl acetate as acyl acceptors in a batch reactor, within the temperature range 393–483 K. The yields in fatty acid ethyl esters (FAEE) and triacetin (TA) after 20 h of reaction time increased from 8% and 2%–to 61% and 22%, respectively, when the reaction temperature increased from 423 to 483 K. An optimum value of 40 for the acyl acceptor to oil molar ratio was found to be necessary to match good fatty acid alkyl ester yields with high enough reaction rate. The rate of generation of esters was significantly higher when methyl acetate was used as acyl acceptor instead of its ethyl homologue. The collected results suggest that tin octoate can be used as effective catalyst for the interesterification of rapeseed oil with methyl or ethyl acetate being highly soluble in the reaction system, less expensive than enzymes and allowing the operator to work under milder conditions than supercritical interesterification processes. - Highlights: • We study the interesterification of rapeseed oil catalyzed by tin(II) octoate. • Tin(II) octoate is an effective homogeneous catalyst at 483 K. • The acyl acceptor to oil molar ratio must be optimized. • Higher rate of reaction is obtained with methyl acetate as acyl acceptor

  18. Chaos in a coulombic muffin-tin potential

    Brandis, S.

    1994-04-01

    We study the two-dimensional classical scattering dynamics by a Muffin-Tin potential with 3 Coulomb singularities. A complete symbolic dynamics for the periodic orbits is derivd. The classical trajectories are shown to be hyperbolic everywhere in phase space and to carry no conjugate points. (orig.)

  19. Generalized KKR-theory for non-muffin-tin potentials

    Molenaar, J.

    1989-01-01

    The author shows that the secular equation in KKR (Korringa, Kohn and Rostoker) theory retains its separable structure also in the case of non-muffin-tin potentials. This generalisation has been extensively discussed recently. During this discussion, in which the possible necessity of so-called near

  20. Variationally-optimized muffin-tin potentials for band calculations

    Pant, M.M.

    1979-09-01

    A method is suggested to determine the best local periodic crystal potential V(r) by minimizing the Hartree-Fock expectation value of the energy. The explicit form of the integral equation for the local exchange potential is obtained for the special case of the Muffin-tin aproximation. (author)

  1. Highly conducting and transparent sprayed indium tin oxide

    Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

    1998-03-01

    Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

  2. On the electrochemical migration mechanism of tin in electronics

    Minzari, Daniel; Jellesen, Morten Stendahl; Møller, Per

    2011-01-01

    Electrochemical migration (ECM) of tin can result in the growth of a metal deposit with a dendritic structure from cathode to anode. In electronics, such growth can lead to short circuit of biased electrodes, potentially leading to intermittent or complete failure of an electronic device...

  3. Tasmanian tin and tungsten granites - their radiometric characteristics

    Yeates, A.N.

    1982-01-01

    A radiometric survey of Tasmanian granites has shown, with one exception, that tin and tungsten-bearing granites have high radioactivity, largely owing to increased uranium. Many have a high uranium/thorium ratio as well. Radiometric measurements can also delineate different granite types within composite bodies

  4. Classical and quantum chaotic scattering in a muffin tin potential

    Brandis, S.

    1995-05-01

    In this paper, we study the classical mechanics, the quantum mechanics and the semi-classical approximation of the 2-dimensional scattering from a muffin tin potential. The classical dynamical system for Coulombic muffin tins is proven to be chaotic by explicit construction of the exponentially increasing number of periodic orbits. These are all shown to be completely unstable (hyperbolic). By methods of the thermodynamic formalism we can determine the Hausdorff dimension, escape rate and Kolmogorov-Sinai-entropy of the system. An extended KKR-method is developed to determine the quantum mechanical S-matrix. We compare a few integrable scattering examples with the results of the muffin tin scattering. Characteristic features of the spectrum of eigenphases turn out to be the level repulsion and long range rigidity as compared to a completely random spectrum. In the semiclassical analysis we can rederive the regularized Gutzwiller trace formula directly from the exact KKR-determinant to prove that no further terms contribute in the case of the muffin tin potential. The periodic orbit sum allows to draw some qualitative conclusions about the effects of classical chaos on the quantum mechanics. In the context of scaling systems the theory of almost periodic functions is discussed as a possible mathematical foundation for the semiclassical periodic orbit sums. Some results that can be obtained from this analysis are developed in the context of autocorrelation functions and distribution functions for chaotic scattering systems. (orig.)

  5. Chemical vapor deposition of tin oxide: fundamentals and applications

    Mol, A.M.B. van; Chae, Y.; McDaniel, A.H.; Allendorf, M.D.

    2006-01-01

    Tin oxide thin layers have very beneficial properties such as a high transparency for visible light and electrical conductivity making these coatings suitable for a wide variety of applications, such as solar cells, and low-emissivity coatings for architectural glass windows. Each application

  6. Quadtree of TIN: a new algorithm of dynamic LOD

    Zhang, Junfeng; Fei, Lifan; Chen, Zhen

    2009-10-01

    Currently, Real-time visualization of large-scale digital elevation model mainly employs the regular structure of GRID based on quadtree and triangle simplification methods based on irregular triangulated network (TIN). TIN is a refined means to express the terrain surface in the computer science, compared with GRID. However, the data structure of TIN model is complex, and is difficult to realize view-dependence representation of level of detail (LOD) quickly. GRID is a simple method to realize the LOD of terrain, but contains more triangle count. A new algorithm, which takes full advantage of the two methods' merit, is presented in this paper. This algorithm combines TIN with quadtree structure to realize the view-dependence LOD controlling over the irregular sampling point sets, and holds the details through the distance of viewpoint and the geometric error of terrain. Experiments indicate that this approach can generate an efficient quadtree triangulation hierarchy over any irregular sampling point sets and achieve dynamic and visual multi-resolution performance of large-scale terrain at real-time.

  7. Determination of tungsten and tin ions after preconcentration by flotation

    Dietze, U.; Kunze, S.

    1990-01-01

    A highly sensitive and selective combined method of flotation followed by spectrophotometry/d.c. polarography for the determination of tungsten and tin ions in acid and alkaline waste waters and hydrometallurgical solutions is presented here. Both kinds of ions are coprecipitated in the analyte solution with zirconium hydroxide after addition of ZrOCl 2 solution and ammonia. Afterwards, the collector precipitate is separated from the aqueous phase and preconcentrated by flotation for which sodium oleate and a frother are added. The precipitate is dissolved in a small amount of acid, with the organic reagents being destroyed by oxidation. The enrichment factor of the proposed technique is 100, with variations possible. Recovery is 94 % for tungsten and 99 % for tin. Spectrophotometry of the thiocyanate complex and d.c. polarography are applied as determination techniques for tungsten and tin, respectively. Detection limits attainable by this technique are 6 ng.ml -1 for tungsten and 5 ng.ml -1 for tin for the initial sample. (Authors)

  8. Recent results on neutron rich tin isotopes by laser spectroscopy

    Roussière, B; Crawford, J E; Essabaa, S; Fedosseev, V; Geithner, W; Genevey, J; Girod, M; Huber, G; Horn, R; Kappertz, S; Lassen, J; Le Blanc, F; Lee, J K P; Le Scornet, G; Lettry, Jacques; Mishin, V I; Neugart, R; Obert, J; Oms, J; Ouchrif, A; Peru, S; Pinard, J; Ravn, H L; Sauvage, J; Verney, D

    2001-01-01

    Laser spectroscopy measurements have been performed on neutron rich tin isotopes using the COMPLIS experimental setup. The nuclear charge radii of the even-even isotopes from A=108 to 132 are compared to the results of macroscopic and microscopic calculations. The improvements and optimizations needed to perform the isotope shift measurement on $^{134}$Sn are presented.

  9. Mechanical Properties of Glass Surfaces Coated with Tin Oxide

    Swindlehurst, W. E.; Cantor, B.

    1978-01-01

    The effect of tin oxide coatings on the coefficient of friction and fracture strength of glass surfaces is studied. Experiments were performed partly on commercially treated glass bottles and partly on laboratory prepared microscope slides. Coatings were applied in the laboratory by decomposition...

  10. Tin Whisker Formation — A Stress Relieve Phenomenon

    Dittes, M.; Oberndorff, P.; Crema, P.; Su, P.

    2006-02-01

    With the move towards lead-free electronics also the solderable finish of electronic components' terminations are converted. While the typical finish was containing 5 % to 20 % lead (Pb) and thus was almost whisker free, lead (Pb)-free finishes such as pure tin or high tin alloys are rather prone to grow whisker. These whiskers are spontaneous protrusions that grow to a significant length of up to millimeters with a typical diameter in the range of few microns and are suspect to cause shorts in electronic assemblies. The latest details of the mechanisms are not yet understood. However it appears to be well established that the driving force for tin whisker growth is a compressive stress in the tin layer and that this stress is released by whisker formation. Besides the mechanism for whisker growth therefore the mechanism of the stress induction is of interest. The origin of that stress may have multiple sources. Among others the most important one is the volume increase within the tin layer due the formation of intermetallics at the interface to the base material. This applies to all copper based material. For base materials with a coefficient of thermal expansion (cte) significantly different from the tin finish another mechanism plays the dominant role. This is the induction of stress during thermal cycling due to the different expansion of the materials with every temperature change. Another mechanism for stress induction may be the oxidation of the finish, which also leads to a local volume increase. Based on the knowledge of stress induction various mitigation strategies can be deducted. Most common is the introduction of a diffusion barrier (e.g. Ni) in order to prevent the growth of the Cu-Sn intermetallics, the controlled growth of Cu-Sn intermetallics in order to prevent their irregularity or the introduction of a mechanical buffer material targeting at the minimisation of the cte mismatch between base and finish material. With respect to the stress

  11. Proton microprobe study of tin-polymetallic deposits

    Murao, S. [Geological Survey of Japan, Tsukuba, Ibaraki (Japan); Sie, S.H.; Suter, G.F. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1996-12-31

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs.

  12. Proton microprobe study of tin-polymetallic deposits

    Murao, S [Geological Survey of Japan, Tsukuba, Ibaraki (Japan); Sie, S H; Suter, G F [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1997-12-31

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs.

  13. Characterization of tin films synthesized from ethaline deep eutectic solvent

    Ghosh, Swatilekha; Roy, Sudipta

    2014-01-01

    Highlights: • Tin deposition was achieved by galvanostatic method on the basic substrates from ethaline deep eutectic solvent without use of any additives. • The current potential behaviour of tin system changes with increase in concentration of hydrated tin chloride in ethaline. • The deposition rate in ethaline display three times lower value compared to aqueous electrolytes. • Fine grained crystals of 62 ± 10 nm were obtained for tin deposits. • The deposition process is economical and can be adapted for industrial applications. - Abstract: Tin (Sn) films were electrodeposited by galvanostatic method from ethaline deep eutectic solvent (DES), without any additives. The effect of various deposition parameters on the microstructure was studied. With increase in metal salt concentration from 0.01 to 0.1 M, changes in current–potential behaviour were observed in the polarization scans. This might be due to the existence of [SnCl 3 ] − , [Sn 2 Cl 5 ] − complexes in ethaline DES. Smooth and homogeneous deposits were obtained on a steel substrate surface by applying current density of 1.57 × 10 −3 A/cm 2 at 25 °C. Under these conditions the deposition rate was found to be 0.1 ± 10% μm/min and current efficiency was obtained as 84 ± 3%. XRD analysis of the deposit confirmed the polycrystalline tetragonal structure with mostly (2 0 0) orientation having a crystallite size about 62 ± 16% nm along with an internal strain of 0.0031 ± 22%. The present deposition method is simple, economical and can be adapted for industrial applications

  14. Proton microprobe study of tin-polymetallic deposits

    Murao, S.; Sie, S.H.; Suter, G.F.

    1996-01-01

    Tin-polymetallic vein type deposits are a complex mixture of cassiterite and sulfides and they are the main source of technologically important rare metals such as indium and bismuth. Constituent minerals are usually fine grained having wide range of chemical composition and often the elements of interest occur as trace elements not amenable to electron microprobe analysis. PIXE with a proton microprobe can be an effective tool to study such deposits by delineating the distribution of trace elements among carrier minerals. Two representative indium-bearing deposits of tin- polymetallic type, Tosham of India (Cu-ln-Bi-Sn-W-Ag), and Mount Pleasant of Canada (Zn-Cu-In-Bi-Sn-W), were studied to delineate the distribution of medical/high-tech rare metals and to examine the effectiveness of the proton probe analysis of such ore. One of the results of the study indicated that indium and bismuth are present in chalcopyrite in the deposits. In addition to these important rare metals, zinc, copper, arsenic, antimony, selenium, and tin are common in chalcopyrite and pyrite. Arsenopyrite contains nickel, copper, zinc, silver, tin, antimony and bismuth. In chalcopyrite and pyrite, zinc, arsenic, indium, bismuth and lead are richer in Mount Pleasant ore, but silver is higher at Tosham. Also thallium and gold were found only in Tosham pyrite. The Tosham deposit is related to S-type granite, while Mount Pleasant to A-type. It appears that petrographic character of the source magma is one of the factors to determine the trace element distribution in tin-polymetallic deposit. 6 refs., 2 figs

  15. Process for Making a Noble Metal on Tin Oxide Catalyst

    Davis, Patricia; Miller, Irvin; Upchurch, Billy

    2010-01-01

    To produce a noble metal-on-metal oxide catalyst on an inert, high-surface-area support material (that functions as a catalyst at approximately room temperature using chloride-free reagents), for use in a carbon dioxide laser, requires two steps: First, a commercially available, inert, high-surface-area support material (silica spheres) is coated with a thin layer of metal oxide, a monolayer equivalent. Very beneficial results have been obtained using nitric acid as an oxidizing agent because it leaves no residue. It is also helpful if the spheres are first deaerated by boiling in water to allow the entire surface to be coated. A metal, such as tin, is then dissolved in the oxidizing agent/support material mixture to yield, in the case of tin, metastannic acid. Although tin has proven especially beneficial for use in a closed-cycle CO2 laser, in general any metal with two valence states, such as most transition metals and antimony, may be used. The metastannic acid will be adsorbed onto the high-surface-area spheres, coating them. Any excess oxidizing agent is then evaporated, and the resulting metastannic acid-coated spheres are dried and calcined, whereby the metastannic acid becomes tin(IV) oxide. The second step is accomplished by preparing an aqueous mixture of the tin(IV) oxide-coated spheres, and a soluble, chloride-free salt of at least one catalyst metal. The catalyst metal may be selected from the group consisting of platinum, palladium, ruthenium, gold, and rhodium, or other platinum group metals. Extremely beneficial results have been obtained using chloride-free salts of platinum, palladium, or a combination thereof, such as tetraammineplatinum (II) hydroxide ([Pt(NH3)4] (OH)2), or tetraammine palladium nitrate ([Pd(NH3)4](NO3)2).

  16. NMR as a tool for kinetic studies: application to the assessment of organo tin reactivity

    Fouquet, E.; Roulet, T. [Bordeaux-1 Univ., 33 - Talence (France); Pianet, I. [Bordeaux-1 Univ., 33 -Talence (France) CNRS, Centre d`Etudes Structurales et d`Analyse des Molecules Organiques; Willem, R. [Brussels University (VUB), Brussels (Belgium)

    1998-02-01

    There is a growing interest for the research of an answer to the environmental problems related to the industrial use of tetra organo tins. An interesting alternative would be to develop the chemistry of mono organo tins because of their lower toxicity and of the easy removal of ``inorganic`` tin side products. In this work, halogen exchange rates are measured for various mono organo tins with NMR techniques (EXSY spectra and 1 D {sup 119} Sn NMR), and an exchange mechanism is proposed. A correlation between kinetic data and the reactivity of the mono organo tins is then exemplified with radical allylic transfer and palladium catalyzed coupling reactions. (authors) 14 refs.

  17. The recovery of tin, and the production of niobium pentoxide and potassium tantalum fluoride, from a tin slag

    Iorio, G.; Tyler, M.S.

    1987-01-01

    This report describes the results of testwork on the recovery of tin, niobium, and tantalum from a tin slag. The slag, which consisted mainly of amorphous silica, with varying amounts of calcuim, magnesium, manganese, iron, and aluminium, contained an average of 8,8 per cent niobium pentoxide and 6,2 per cent tantalum pentoxide. The metallic tin-ion phase was removed from the crushed slag by magnetic separation. The slag was then leached with hydrochloric acid to remove magnesium, calcium, aluminium, iron, manganese, and the remainder of the tin. Leaching with sodium hydroxide for the removal of silica and phosphorous was followed by a final leach with hydrochloric acid for the removal of sodium. The upgraded concentrate thus obtained was purified by leaching with hydrofluoric acid, solvent extraction of niobium and tantalum into tri-n-butyl phosphate and methyl isobutyl ketone, and selective stripping of niobium with sulphuric acid and tantalum with ammonium floride. Niobium pentoxide and potassium tantalum fluoride were then precipitated by the addition of ammonium hydroxide and potassium fluoride to the respective strip liquors. The overall recoveries in the upgraded concentrate were 98 per cent for tantalum and 92 per cent for niobium. Dissolutions and recoveries of over 99 per cent were obtained for both tantalum and niobium in the purification steps. The niobium pentoxide and potassium tantalum fluoride precipitates obtained were of high purity

  18. Effect of Graphene Addition on Mechanical Properties of TiN

    Shon, In-Jin; Yoon, Jin-Kook; Hong, Kyung-Tae

    2017-01-01

    Despite of many attractive properties of TiN, the current concern about the TiN focuses on its low fracture toughness below the ductile-brittle transition temperature. To improve its mechanical properties, the approach generally utilized has been the addition of a second phase to form composites and to make nanostructured materials. In this respect, highly dense nanostructured TiN and TiN-graphene composites were obtained within two min at 1250 ℃. The grain size of TiN was reduced remarkably by the addition of graphene. The addition of graphene to TiN simultaneously improved the fracture toughness and hardness of TiN-graphene composite due to refinement of TiN and deterring crack propagation by graphene. This study demonstrates that the graphene can be an effective reinforcing agent for improved hardness and fracture toughness of TiN composites.

  19. Effect of Graphene Addition on Mechanical Properties of TiN

    Shon, In-Jin [Chonbuk National University, Jeonju (Korea, Republic of); Yoon, Jin-Kook; Hong, Kyung-Tae [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    2017-03-15

    Despite of many attractive properties of TiN, the current concern about the TiN focuses on its low fracture toughness below the ductile-brittle transition temperature. To improve its mechanical properties, the approach generally utilized has been the addition of a second phase to form composites and to make nanostructured materials. In this respect, highly dense nanostructured TiN and TiN-graphene composites were obtained within two min at 1250 ℃. The grain size of TiN was reduced remarkably by the addition of graphene. The addition of graphene to TiN simultaneously improved the fracture toughness and hardness of TiN-graphene composite due to refinement of TiN and deterring crack propagation by graphene. This study demonstrates that the graphene can be an effective reinforcing agent for improved hardness and fracture toughness of TiN composites.

  20. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  1. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi{sub 2}Te{sub 3}) single crystals for thermoelectric applications

    Krishna, Anuj [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Vijayan, N., E-mail: nvijayan@nplindia.org [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Singh, Budhendra [TEMA-NRD, Mechanical Engineering Department and Aveiro Institute of Nanotechnology (AIN), University of Aveiro, 3810-193 Aveiro (Portugal); Thukral, Kanika [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi 110012 (India); X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Maurya, K.K. [X-ray Analysis and Crystal Growth Section, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2016-03-07

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi{sub 2}Te{sub 3}) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  2. Corrosion of steels in molten gallium (Ga), tin (Sn) and tin lithium alloy (Sn–20Li)

    Kondo, Masatoshi, E-mail: kondo.masatoshi@nr.titech.ac.jp [Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550 (Japan); Ishii, Masaomi [Department of Nuclear Engineering, School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292 (Japan); Muroga, Takeo [Department of Helical Plasma Research, National Institute for Fusion Science, Toki, Gifu 502-5292 (Japan)

    2015-10-15

    Graphical abstract: Corrosion of RAFM steel, JLF-1, in liquid Sn–20Li was caused by the formation of Fe-Sn alloyed layer. - Highlights: • The corrosion tests were performed for the reduced activation ferritic martensitic steel JLF-1 and the austenitic steel SUS316 in liquid Ga, Sn and Sn-20Li at 873 K up to 750 h. • The weight loss of the specimens exposed to liquid Ga, Sn and Sn-20Li was evaluated. • The corrosion of the steels in liquid Ga was caused by the alloying reaction between Ga and Fe on the steel surface. • The corrosion of the steels in liquid Sn was caused by the alloying reaction between Sn and Fe on the steel surface. • The corrosion of the steels in liquid Sn-20Li was caused by the formation of the Fe-Sn alloyed layer and the diffusion of Sn and Li into the steel matrix. - Abstract: The compatibility of steels in liquid gallium (Ga), tin (Sn) and tin lithium alloy (Sn–20Li) was investigated by means of static corrosion tests. The corrosion tests were performed for reduced activation ferritic martensitic steel JLF-1 (JOYO-HEAT, Fe–9Cr–2W–0.1C) and austenitic steel SUS316 (Fe–18Cr–12Ni–2Mo). The test temperature was 873 K, and the exposure time was 250 and 750 h. The corrosion of these steels in liquid Ga, Sn and Sn–20Li alloy was commonly caused by the formation of a reaction layer and the dissolution of the steel elements into the melts. The reaction layer formed in liquid Ga was identified as Fe{sub 3}Ga from the results of metallurgical analysis and the phase diagram. The growth rate of the reaction layer on the JLF-1 steel showed a parabolic rate law, and this trend indicated that the corrosion could be controlled by the diffusion process through the layer. The reaction layer formed in liquid Sn and Sn–20Li was identified as FeSn. The growth rate had a linear function with exposure time. The corrosion in Sn and Sn–20Li could be controlled by the interface reaction on the layer. The growth rate of the layer formed

  3. Corrosion of steels in molten gallium (Ga), tin (Sn) and tin lithium alloy (Sn–20Li)

    Kondo, Masatoshi; Ishii, Masaomi; Muroga, Takeo

    2015-01-01

    Graphical abstract: Corrosion of RAFM steel, JLF-1, in liquid Sn–20Li was caused by the formation of Fe-Sn alloyed layer. - Highlights: • The corrosion tests were performed for the reduced activation ferritic martensitic steel JLF-1 and the austenitic steel SUS316 in liquid Ga, Sn and Sn-20Li at 873 K up to 750 h. • The weight loss of the specimens exposed to liquid Ga, Sn and Sn-20Li was evaluated. • The corrosion of the steels in liquid Ga was caused by the alloying reaction between Ga and Fe on the steel surface. • The corrosion of the steels in liquid Sn was caused by the alloying reaction between Sn and Fe on the steel surface. • The corrosion of the steels in liquid Sn-20Li was caused by the formation of the Fe-Sn alloyed layer and the diffusion of Sn and Li into the steel matrix. - Abstract: The compatibility of steels in liquid gallium (Ga), tin (Sn) and tin lithium alloy (Sn–20Li) was investigated by means of static corrosion tests. The corrosion tests were performed for reduced activation ferritic martensitic steel JLF-1 (JOYO-HEAT, Fe–9Cr–2W–0.1C) and austenitic steel SUS316 (Fe–18Cr–12Ni–2Mo). The test temperature was 873 K, and the exposure time was 250 and 750 h. The corrosion of these steels in liquid Ga, Sn and Sn–20Li alloy was commonly caused by the formation of a reaction layer and the dissolution of the steel elements into the melts. The reaction layer formed in liquid Ga was identified as Fe 3 Ga from the results of metallurgical analysis and the phase diagram. The growth rate of the reaction layer on the JLF-1 steel showed a parabolic rate law, and this trend indicated that the corrosion could be controlled by the diffusion process through the layer. The reaction layer formed in liquid Sn and Sn–20Li was identified as FeSn. The growth rate had a linear function with exposure time. The corrosion in Sn and Sn–20Li could be controlled by the interface reaction on the layer. The growth rate of the layer formed in

  4. Ag-tellurides at the site Treibolc near the village Hodrusa-Hamre; Ag-teluridy na lokalite Treibolc pri obci Hodrusa-Hamre

    Kozak, J [Univerzita Komenskeho v Bratislave, Prirodovedecka fakulta, Katedra mineralogie a petrologie, 84215 Bratislava (Slovakia)

    2012-04-25

    Ag-tellurides were described in association with galenite, sphalerite, chalcopyrite and bornite samples during examining hydrothermal mineralization of Stiavnica stratovolcano (Hodrusa-Hamre settlement) in heavily silicified sediments of Permian age. They were found and confirmed by WDS analysis. Their presence on the site is very unique with no economic use. Paragenesis originated at 250-270 grad C in the presence of fluid and zero salinity. (authors)

  5. Combinatorial study of zinc tin oxide thin-film transistors

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  6. Electronegativity-dependent tin etching from thin films

    Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

    2016-07-15

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

  7. Gap enhancement in phonon-irradiated superconducting tin films

    Miller, N.D.; Rutledge, J.E.

    1982-01-01

    We have measured the current-voltage (I-V) characteristics of tin-tin tunnel junctions driven out of equilibrium by a flux of near-thermal phonons from a heater. The reduced ambient temperature was T/T/sub c/ = 0.41. The nonequilibrium I-V curves are compared to equilibrium thermal I-V curves at an elevated temperature chosen to match the total number of quasiparticles. The nonequilibrium curves show a smaller current near zero bias and a larger gap than the thermal curves. This is the first experimental evidence of phonon-induced gap enhancement far below T/sub c/. The results are discussed in terms of the coupled kinetic equations of Chang and Scalapino

  8. TDPAC characterization of tin oxides using 181Ta

    Moreno, M.S.; Desimoni, J.; Requejo, F.G.; Renteria, M.; Bibiloni, A.G.

    1991-01-01

    In connection with a general study of the evolution of tin-oxygen thin films, we report here on the hyperfine interactions of 181 Ta substitutionally replacing tin in the isolated phases SnO and SnO 2 . For this purpose, pure SnO pressed powder and a thin SnO 2 film were implanted with 181 Hf. In both cases, unique quadrupole frequencies were found after thermal annealing treatments. The results indicate that the following hyperfine parameters: ν Q =740.6(2.1) MHz, η=0.07(2) and ν Q =971.5(1.9) MHz, η=0.72(1) characterize 181 Ta and SnO and SnO 2 , respectively. (orig.)

  9. Direct Reaction Experimental Studies with Beams of Radioactive Tin Ions

    Jones, K. L. [University of Tennessee, Knoxville (UTK); Ahn, S.H. [University of Tennessee, Knoxville (UTK); Allmond, James M [ORNL; Ayres, A. [University of Tennessee, Knoxville (UTK); Bardayan, Daniel W [ORNL; Baugher, T. [Michigan State University, East Lansing; Bazin, D. [Michigan State University, National Superconducting Cyclotron Laboratory (NSCL); Beene, James R [ORNL; Berryman, J. S. [Michigan State University, East Lansing; Bey, A. [University of Tennessee, Knoxville (UTK); Bingham, C. R. [University of Tennessee, Knoxville (UTK); Cartegni, L. [University of Tennessee, Knoxville (UTK); Chae, K. Y. [University of Tennessee, Knoxville (UTK)/Sungkyunkwan University, Korea; Cizewski, J. A. [Rutgers University; Gade, A. [Michigan State University, National Superconducting Cyclotron Laboratory (NSCL); Galindo-Uribarri, Alfredo {nmn} [ORNL; Garcia-Ruiz, R.F. [Instituut voor Kernen Stralingsfysica, KU Leuven, B-3001, Leuven, Belgium; Grzywacz, Robert Kazimierz [ORNL; Howard, Meredith E [ORNL; Kozub, R. L. [Tennessee Technological University (TTU); Liang, J Felix [ORNL; Manning, Brett M [ORNL; Matos, M. [Louisiana State University; McDaniel, S. [Michigan State University, East Lansing; Miller, D. [University of Tennessee, Knoxville (UTK); Nesaraja, Caroline D [ORNL; O' Malley, Patrick [Rutgers University; Padgett, S [University of Tennessee, Knoxville (UTK); Padilla-Rodal, Elizabeth [Universidad Nacional Autonoma de Mexico (UNAM); Pain, Steven D [ORNL; Pittman, S. T. [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Radford, David C [ORNL; Ratkiewicz, Andrew J [ORNL; Schmitt, Kyle [ORNL; Smith, Michael Scott [ORNL; Stracener, Daniel W [ORNL; Stroberg, S. [Michigan State University, East Lansing; Tostevin, Jeffrey A [ORNL; Varner Jr, Robert L [ORNL; Weisshaar, D. [Michigan State University, East Lansing; Wimmer, K. [Michigan State University, National Superconducting Cyclotron Laboratory (NSCL)/Central Michigan University; Winkler, R. [Michigan State University, East Lansing

    2015-01-01

    The tin chain of isotopes provides a unique region in which to investigate the evolution of single-particle structure, spreading from N = 50 at Sn-100, through 10 stable isotopes and the N = 82 shell closure at Sn-132 out into the r-process path. Direct reactions performed on radioactive ion beams are sensitive spectroscopic tools for studying exotic nuclei. Here we present one experiment knocking out neutrons from tin isotopes that are already neutron deficient and two reactions that add a neutron to neutron-rich Sn-130. Both techniques rely on selective particle identification and the measurement of gamma rays in coincidence with charged ions. We present the goals of the two experiments and the particle identification for the channels of interest. The final results will be presented in future publications.

  10. Configuration interaction in charge exchange spectra of tin and xenon

    D'Arcy, R.; Morris, O.; Ohashi, H.; Suda, S.; Tanuma, H.; Fujioka, S.; Nishimura, H.; Nishihara, K.; Suzuki, C.; Kato, T.; Koike, F.; O'Sullivan, G.

    2011-06-01

    Charge-state-specific extreme ultraviolet spectra from both tin ions and xenon ions have been recorded at Tokyo Metropolitan University. The electron cyclotron resonance source spectra were produced from charge exchange collisions between the ions and rare gas target atoms. To identify unknown spectral lines of tin and xenon, atomic structure calculations were performed for Sn14+-Sn17+ and Xe16+-Xe20+ using the Hartree-Fock configuration interaction code of Cowan (1981 The Theory of Atomic Structure and Spectra (Berkeley, CA: University of California Press)). The energies of the capture states involved in the single-electron process that occurs in these slow collisions were estimated using the classical over-barrier model.

  11. Conversion electron Moessbauer spectroscopic studies on the chemical states of surface layers of corroded tin plates and tin-coated iron plates

    Kato, Akinori; Endo, Kazutoyo; Sano, Hirotoshi

    1980-01-01

    By means of the conversion electron Moessbauer spectroscopy (CEMS), we studied surface layers of ''tin'' plates and tin-coated iron plates corroded by various acids. Transmission Moessbauer spectra and X-ray diffraction patterns were also measured. Metastannic acid was formed, when the ''tin'' plate was corroded by nitric acid solution. In corrosion by phosphoric acid solution, the X-ray diffractometry revealed the formation of tin(IV) pyrophosphate. In corrosion by various organic acid solutions, the formation of oxides was identified by the 119 Sn CEMS, but not by the X-ray diffractometry because of the too thin corrosion layer. In corrosion of tin-coated iron plates, maleic acid, malonic acid, formic acid, and oxalic acid were used. It was determined by CEMS that the corrosion products caused by these acids were tin(IV) oxides, although they could not be identified by the X-ray diffractometry. CEMS also confirmed that the surface of uncorroded tin-coated iron plate was already oxidized by air. Colorimetric determinations of Sn and Fe dissolved from tin-coated iron plates to various acid solutions confirmed that maleic acid had the strongest corrosion effect among the organic acids studied. (author)

  12. Diffusion of tin in germanium: A GGA+U approach

    Tahini, H. A.; Chroneos, Alexander; Grimes, R. W.; Schwingenschlö gl, Udo

    2011-01-01

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

  13. Tin (Sn) for enhancing performance in silicon CMOS

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2013-01-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  14. Tin (Sn) for enhancing performance in silicon CMOS

    Hussain, Aftab M.

    2013-10-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  15. Dynamics of implanted muons at low temperatures in white tin

    Solt, G.; Zimmermann, U.; Herlach, D.

    2008-01-01

    The low temperature lattice site of the implanted μ + particle and its subsequent delocalization at higher temperatures was investigated in single crystal white tin for 2 + was found to reside at the interstitial sites of type d. With increasing temperature thermally activated hopping sets in at T=48±2K, resulting in complete delocalization near 60 K. The activation energy for hopping, E a =113±15meV, is substantially higher than that found previously for the equally tetragonal indium

  16. Diffusion of tin in germanium: A GGA+U approach

    Tahini, H. A.

    2011-10-18

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

  17. Radiodiagnostic complexes employing fluorine-containing tin reducing agents

    Hill, B.K.; Kubik, V.M.

    1977-01-01

    Radiodiagnostic agents for use in mammalian bodies comprising a radiocomplex which is the reaction product of Tc99m-pertechnetate ion, a diagnostic ligand and a tin (II) reducing agent selected from the group consisting of SnF 2 , MSnF 3 , MSn 2 F 5 and mixtures thereof, wherein M is NH 4 , Na, K, Li, Rb or Cs. Radiocomplex precursor compositions and methods of making the radiocomplex and radiodiagnostic agents are described

  18. Evaluation on the characteristics of tin-silver-bismuth solder

    Xia, Z.; Shi, Y.; Chen, Z.

    2002-02-01

    Tin-silver-bismuth solder is characterized by its lower melting point, good wetting behavior, and good mechanical property for which it is expected to be a new lead-free solder to replace tin-lead solder. In this article, Sn-3.33Ag-4.83Bi solder was investigated concerning its physical, spreading, and mechanical properties under specific conditions. Cooling curves and DSC results showed that it was close to eutectic composition (m.p. 210° 212 °C). Coefficiency of thermal expansion (CTE) of this solder, between that of PCBs and copper substrates, was beneficial to alleviate the thermal mismatch of the substrates. It was also a good electrical and thermal conductor. Using a rosin-based, mildly activated (RMA) flux, a spreading test indicated that SnAgBi solder paste had good solderability. Meanwhile, the solder had high tensile strength and fracture energy. Its fracture mechanism was a mixture of ductile and brittle fracture morphology. The metallographic and EDAX analyses indicated that it was composed of a tin-based solid solution and some intermetallic compound (IMC) that could strengthen the substrate. However, these large needle-like IMCs would cut the substrate and this resulted in the decreasing of the toughness of the solder.

  19. Acid-catalyzed kinetics of indium tin oxide etching

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  20. Tin Whisker Electrical Short Circuit Characteristics. Part 2

    Courey, Karim J.; Asfour, Shihab S.; Onar, Arzu; Bayliss, Jon A.; Ludwig, Lawrence L.; Wright, Maria C.

    2009-01-01

    Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

  1. Determination of total tin in canned food using inductively coupled plasma atomic emission spectroscopy

    Perring, Loic; Basic-Dvorzak, Marija [Department of Quality and Safety Assurance, Nestle Research Centre, P.O. Box 44, Vers chez-les-Blanc, 1000, Lausanne (Switzerland)

    2002-09-01

    Tin is considered to be a priority contaminant by the Codex Alimentarius Commission. Tin can enter foods either from natural sources, environmental pollution, packaging material or pesticides. Higher concentrations are found in processed food and canned foods. Dissolution of the tinplate depends on the of food matrix, acidity, presence of oxidising reagents (anthocyanin, nitrate, iron and copper) presence of air (oxygen) in the headspace, time and storage temperature. To reduce corrosion and dissolution of tin, nowadays cans are usually lacquered, which gives a marked reduction of tin migration into the food product. Due to the lack of modern validated published methods for food products, an ICP-AES (Inductively coupled plasma-atomic emission spectroscopy) method has been developed and evaluated. This technique is available in many laboratories in the food industry and is more sensitive than atomic absorption. Conditions of sample preparation and spectroscopic parameters for tin measurement by axial ICP-AES were investigated for their ruggedness. Two methods of preparation involving high-pressure ashing or microwave digestion in volumetric flasks were evaluated. They gave complete recovery of tin with similar accuracy and precision. Recoveries of tin from spiked products with two levels of tin were in the range 99{+-}5%. Robust relative repeatabilities and intermediate reproducibilities were <5% for different food matrices containing >30 mg/kg of tin. Internal standard correction (indium or strontium) did not improve the method performance. Three emission lines for tin were tested (189.927, 283.998 and 235.485 nm) but only 189.927 nm was found to be robust enough with respect to interferences, especially at low tin concentrations. The LOQ (limit of quantification) was around 0.8 mg/kg at 189.927 nm. A survey of tin content in a range of canned foods is given. (orig.)

  2. Evaluation of the suitability of tin slag in cementitious materials: Mechanical properties and Leaching behaviour

    Rustandi, Andi; Wafa' Nawawi, Fuad; Pratesa, Yudha; Cahyadi, Agung

    2018-01-01

    Tin slag, a by-product of tin production has been used in cementitious application. The present investigation focuses on the suitability of tin slag as primary component in cement and as component that substitute some amount of Portland Cement. The tin slags studied were taken from Bangka, Indonesia. The main contents of the tin slag are SiO2, Al2O3, and Fe2O3 according to the XRF investigation. The aim of this article was to study the mechanical behaviour (compressive strength), microstructure and leaching behaviour of tin slag blended cement. This study used air-cooled tin slag that had been passed through 400# sieve to replace Portland Cement with ratio 0, 10, 20, 30, 40 by weight. Cement pastes and tin slag blended cement pastes were prepared by using water/cement ratio (W/C) of 0.40 by weight and hydrated for various curing ages of 3, 7, 14 days The microstructure of the raw tin slag was investigated using Scanning Electron Microscope (SEM). The phase composition of each cement paste was investigated using X-ray Diffraction (XRD). The aim of the leachability test was to investigate the environmental impacts of tin slag blended cement product in the range 4-8 pH by using static pH-dependent leaching test. The result show that the increase of the tin slag content decreasing the mortar compressive strength at early ages. The use of tin slag in cement provide economic benefits for all related industries.

  3. Tin-Silver Alloys for Flip-Chip Bonding Studied with a Rotating Cylinder Electrode

    Tang, Peter Torben; Pedersen, E.H.; Bech-Nielsen, G.

    1999-01-01

    Electrodeposition of solder for flip-chip bonding is studied in the form of a pyrophosphate/iodide tin-silver alloy bath. The objective is to obtain a uniform alloy composition, with 3.8 At.% silver, over a larger area. This specific alloy will provide an eutectic solder melting at 221°C (or 10°C...... photoresist, have shown a stable and promising alternative to pure tin and tin-lead alloys for flip-chip bonding applications....

  4. Shanghai Futures Exchange Published Draft of Tin and Nickel Futures Contract

    2015-01-01

    Shanghai Futures Exchange published draft for soliciting opinions for tin and nickel futures contract on its official website on January 19,which implies the marketing time of the long awaited tin and nickel futures is drawing near.According to the draft for soliciting opinions,the transaction unit of tin futures contract is 1tonne/lot,minimum variation unit is 10 yuan/tonne,daily maximum price fluctuation shall

  5. Reformulation of Business Strategies for Increasing Sales of TIN Product Stabilizer at PT Timah Industri

    Sundoyo, Hadi; Hamsal, Mohammad

    2013-01-01

    PT. Timah Industri (PT TI) is a subsidiary of PT. Timah (Persero) Tbk which exploit comparative advantage of its parent company as the second largest tin producer in the world. With these advantages PT TI entered the downstream PVC stabilizer tin base. Starting from the difficulty of selling their products and then raised the question in inventory management. PT TI should immediately take strategic steps to save the tin chemical business continues to lose money from time to time. From the res...

  6. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

    2014-01-01

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I excess  = I r0  + K 1 exp (K 2 V), where I r0 , K 1 , and K 2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers

  7. Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

    Carcelen, V.; Rodriguez-Fernandez, J.; Dieguez, E.; Hidalgo, P.

    2010-01-01

    The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53x10 8 Ω cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71x10 5 Ω cm).

  8. A simple fast microwave-assisted synthesis of thermoelectric bismuth telluride nanoparticles from homogeneous reaction-mixture

    Pradhan, Susmita [Jadavpur University, Department of Instrumentation Science (India); Das, Rashmita [Jadavpur University, Department of Instrumentation and Electronics Engineering (India); Bhar, Radhaballabh [Jadavpur University, Department of Instrumentation Science (India); Bandyopadhyay, Rajib [Jadavpur University, Department of Instrumentation and Electronics Engineering (India); Pramanik, Panchanan, E-mail: pramanik1946@gmail.com [GLA University, Department of Chemistry and Nanoscience (India)

    2017-02-15

    A new simple chemical method for synthesis of nanocrystalline bismuth telluride (Bi{sub 2}Te{sub 3}) has been developed by microwave assisted reduction of homogeneous tartrate complexes of bismuth and tellurium metal ions with hydrazine. The reaction is performed at pH 10. The nano-crystallites have rhombohedral phase identified by XRD. The size distribution of nanoparticle is narrow and it ranges between 50 to 70 nm. FESEM shows that the fine powders are composed of small crystallites. The TEM micrographs show mostly deformed spherical particles and the lattice fringes are found to be 0.137 nm. Energy dispersive X-ray spectroscopy (EDX) analysis shows the atomic composition ratio between bismuth and tellurium is 2:3. Thermoelectric properties of the materials are studied after sintering by spark plasma sintering method (SPS). The grain size of the material after sintering is in the nanometer range. The material shows enhanced Seebeck coefficient and electrical conductivity value at 300 K. The figure of merit is found to be 1.18 at 300 K.

  9. Templated growth of cadmium zinc telluride (CZT) nanowires using pulsed-potentials in hot non-aqueous solution

    Gandhi, T.; Raja, K.S.; Misra, M.

    2006-01-01

    A single step non-aqueous electrodeposition of cadmium zinc telluride (CZT) nanowires on nanoporous TiO 2 substrate was investigated under pulsed-potential conditions. Propylene carbonate was used as the non-aqueous medium. Cyclic voltammogram studies were carried out to understand the growth mechanism of CZT. EDAX and XRD measurements indicated formation of a compound semiconductor with a stoichiometry of Cd 1-x Zn x Te, where x varied between 0.04 and 0.2. Variation of the pulsed-cathodic potentials could modulate the composition of the CZT. More negative cathodic potentials resulted in increased Zn content. The nanowires showed an electronic band gap of about 1.6 eV. Mott-Schottky analyses indicated p-type semiconductor properties of both as-deposited and annealed CZT materials. Increase in Zn content increased the charge carrier density. Annealing of the deposits resulted in lower charge carrier densities, in the order of 10 15 cm -3

  10. Comparison of Cadmium-Zinc-Telluride semiconductor and Yttrium-Aluminum-Perovskite scintillator as photon detectors for epithermal neutron spectroscopy

    Tardocchi, M.; Pietropaolo, A.; Andreani, C.; Gorini, G.; Imberti, S.; Perelli-Cippo, E.; Senesi, R.; Rhodes, N.; Schooneveld, E.M.

    2006-01-01

    The range of applications of epithermal neutron scattering experiments has been recently extended by the development of the Resonance Detector. In a Resonance Detector, resonant neutron absorption in an analyzer foil results in prompt emission of X- and γ-rays which are detected by a photon counter. Several combinations of analyzer foils and photon detectors have been studied and tested over the years and best results have been obtained with the combination of a natural uranium and (i) Cadmium-Zinc-Telluride (CZT) semiconductor (ii) Yttrium-Aluminum-Perovskite (YAP) scintillators. Here we compare the performance of the CZT semiconductor and YAP scintillator as Resonance Detector units. Two Resonance Detector prototypes made of natural uranium foil viewed by CZT and YAP were tested on the VESUVIO spectrometer at the ISIS spallation neutron source. The results show that both YAP and CZT can be used to detect epithermal neutrons in the energy range from 1 up to 66 eV. It was found that the signal-to-background ratio of the measurement can significantly be improved by raising the lower level discrimination threshold on the γ energy to about 600 keV. The advantages/disadvantages of the choice of a Resonance Detector based on YAP or CZT are discussed together with some potential applications

  11. CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure

    Jing, Li [Rutgers Univ., Camden, NJ (United States). Dept. of Chem.; Hongyou, Guo [Rutgers Univ., Camden, NJ (United States). Dept. of Chem.; Xiang, Zhang [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry; Kanatzidis, M G [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry

    1995-02-15

    The synthesis and structure of a new ternary silver telluride, CsAg{sub 5}Te{sub 3}, is described. The compound was prepared from a Cs{sub 2}Te-CaTe-Te flux but it can also be prepared from a direct combination of Cs{sub 2}Te and Ag{sub 2}Te under vacuum at 600 C. The crystal data for CsAg{sub 5}Te{sub 3} at 20 C (Mo K{alpha} radiation) are as follows: a=14.672(2) A and c=4.601(3) A; V=990.5(8) A{sup 3}; Z=4; D{sub calc}=7.075 g cm{sup -3}; space group, P4{sub 2} /mnm (No. 136); 2{theta}{sub max}=50 ; number of independent data collected, 572; number of data observed with I>3{sigma}(I), 267; number of variables, 32; {mu}=218.51 cm{sup -1}; extinction coefficient, 0.585x10{sup -7}; final R=0.040; R{sub w}=0.046; goodness of fit, 1.42. The compound features a new structure type with Cs{sup +}-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV. ((orig.))

  12. Synthesis, characterization and enhanced thermoelectric performance of structurally ordered cable-like novel polyaniline–bismuth telluride nanocomposite

    Chatterjee, Krishanu; Mitra, Mousumi; Banerjee, Dipali; Kargupta, Kajari; Ganguly, Saibal

    2013-01-01

    Bismuth telluride (Bi 2 Te 3 ) nanorods and polyaniline (PANI) nanoparticles have been synthesized by employing solvothermal and chemical oxidative processes, respectively. Nanocomposites, comprising structurally ordered PANI preferentially grown along the surface of a Bi 2 Te 3 nanorods template, are synthesized using in situ polymerization. X-ray powder diffraction, UV–vis and Raman spectral analysis confirm the highly ordered chain structure of PANI on Bi 2 Te 3 nanorods, leading to a higher extent of doping, higher chain mobility and enhancement of the thermoelectric performance. Above 380 K, the PANI–Bi 2 Te 3 nanocomposite with a core–shell/cable-like structure exhibits a higher thermoelectric power factor than either pure PANI or Bi 2 Te 3 . At room temperature the thermal conductivity of the composite is lower than that of its pure constituents, due to selective phonon scattering by the nanointerfaces designed in the PANI–Bi 2 Te 3 nanocable structures. The figure of merit of the nanocomposite at room temperature is comparable to the values reported in the literature for bulk polymer-based composite thermoelectric materials. (paper)

  13. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Diagnostic performance of a novel cadmium-zinc-telluride gamma camera system assessed using fractional flow reserve.

    Tanaka, Hirokazu; Chikamori, Taishiro; Tanaka, Nobuhiro; Hida, Satoshi; Igarashi, Yuko; Yamashita, Jun; Ogawa, Masashi; Shiba, Chie; Usui, Yasuhiro; Yamashina, Akira

    2014-01-01

    Although the novel cadmium-zinc-telluride (CZT) camera system provides excellent image quality, its diagnostic value using thallium-201 as assessed on coronary angiography (CAG) and fractional flow reserve (FFR) has not been validated. METHODS AND RESULTS: To evaluate the diagnostic accuracy of the CZT ultrafast camera system (Discovery NM 530c), 95 patients underwent stress thallium-201 single-photon emission computed tomography (SPECT) and then CAG within 3 months. Image acquisition was performed in the supine and prone positions after stress for 5 and 3 min, respectively, and in the supine position at rest for 10 min. Significant stenosis was defined as ≥90% diameter narrowing on visual estimation, or a lesion with <90% and ≥50% stenosis and FFR ≤0.75. To detect individual coronary stenosis, the respective sensitivity, specificity, and accuracy were 90%, 64%, and 78% for left anterior descending coronary artery stenosis, 78%, 84%, and 81% for left circumflex stenosis, and 83%, 47%, and 60% for right coronary artery (RCA) stenosis. The combination of prone and supine imaging had a higher specificity for RCA disease than supine imaging alone (65% vs. 47%), with an improvement in accuracy from 60% to 72%. Using thallium-201 with short acquisition time, combined with prone imaging, CZT SPECT had a high diagnostic yield in detecting significant coronary stenosis as assessed using FFR.

  15. Regulatory policy governing cadmium-telluride photovoltaics: A case study contrasting life cycle management with the precautionary principle

    Sinha, Parikhit; Kriegner, Christopher J.; Schew, William A.; Kaczmar, Swiatoslav W.; Traister, Matthew; Wilson, David J.

    2008-01-01

    Market projections for cadmium-telluride (CdTe) thin-film photovoltaics (PV) are tempered by global environmental policies based on the precautionary principle which restrict electronic products containing cadmium, a known human carcinogen. An alternative to the precautionary principle is life cycle management, which involves manufacturers assuming product stewardship from beginning to end of product life. Both approaches have the aim of minimizing environmental contamination, but attempt to do so in different ways. Restrictions on electronic products containing cadmium by the precautionary principle-based restriction of hazardous substances (RoHS) directive in the European Union and a similar policy in China are presented, relative to their potential impact on CdTe PV. Life cycle environmental risks with respect to potential release of cadmium to the environment are also presented for routine operation of CdTe PV panels, potential catastrophic release of cadmium from a residential fire, and at the end of the product life. There is negligible risk of environmental cadmium contamination during routine operation and insignificant risk during catastrophic exposure events such as fire. At the end of the product life, risks of contamination are minimized by take-back programs that may be paid for by insurance premiums incorporated into the cost of the product. Therefore, policies based on the precautionary principle that could potentially ban the product based on its cadmium content may not be warranted

  16. Regulatory policy governing cadmium-telluride photovoltaics: A case study contrasting life cycle management with the precautionary principle

    Sinha, Parikhit; Kriegner, Christopher J.; Schew, William A.; Kaczmar, Swiatoslav W.; Traister, Matthew; Wilson, David J. [O' Brien and Gere, Ecological Sciences, E. 512 Township Line Road, Two Valley Square, Suite 120, Blue Bell, PA 19422 (United States)

    2008-01-15

    Market projections for cadmium-telluride (CdTe) thin-film photovoltaics (PV) are tempered by global environmental policies based on the precautionary principle which restrict electronic products containing cadmium, a known human carcinogen. An alternative to the precautionary principle is life cycle management, which involves manufacturers assuming product stewardship from beginning to end of product life. Both approaches have the aim of minimizing environmental contamination, but attempt to do so in different ways. Restrictions on electronic products containing cadmium by the precautionary principle-based restriction of hazardous substances (RoHS) directive in the European Union and a similar policy in China are presented, relative to their potential impact on CdTe PV. Life cycle environmental risks with respect to potential release of cadmium to the environment are also presented for routine operation of CdTe PV panels, potential catastrophic release of cadmium from a residential fire, and at the end of the product life. There is negligible risk of environmental cadmium contamination during routine operation and insignificant risk during catastrophic exposure events such as fire. At the end of the product life, risks of contamination are minimized by take-back programs that may be paid for by insurance premiums incorporated into the cost of the product. Therefore, policies based on the precautionary principle that could potentially ban the product based on its cadmium content may not be warranted. (author)

  17. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  18. Studies on Nanocrystalline TiN Coatings Prepared by Reactive Plasma Spraying

    Dong Yanchun

    2008-01-01

    Full Text Available Titanium nitride (TiN coatings with nanostructure were prepared on the surface of 45 steel (Fe-0.45%C via reactive plasma spraying (denoted as RPS Ti powders using spraying gun with self-made reactive chamber. The microstructural characterization, phases constitute, grain size, microhardness, and wear resistance of TiN coatings were systematically investigated. The grain size was obtained through calculation using the Scherrer formula and observed by TEM. The results of X-ray diffraction and electron diffraction indicated that the TiN is main phase of the TiN coating. The forming mechanism of the nano-TiN was characterized by analyzing the SEM morphologies of surface of TiN coating and TiN drops sprayed on the surface of glass, and observing the temperature and velocity of plasma jet using Spray Watch. The tribological properties of the coating under nonlubricated condition were tested and compared with those of the AISI M2 high-speed steel and Al2O3 coating. The results have shown that the RPS TiN coating presents better wear resistance than the M2 high-speed steel and Al2O3 coating under nonlubricated condition. The microhardness of the cross-section and longitudinal section of the TiN coating was tested. The highest hardness of the cross-section of TiN coating is 1735.43HV100 g.

  19. Estimating the Probability of Electrical Short Circuits from Tin Whiskers. Part 2

    Courey, Karim J.; Asfour, Shihab S.; Onar, Arzu; Bayliss, Jon A.; Ludwig, Larry L.; Wright, Maria C.

    2010-01-01

    To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish .

  20. Rf reactive sputtering of indium-tin-oxide films

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  1. Copper zinc tin sulfide-based thin film solar cells

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  2. Coating power RF components with TiN

    Kuchnir, M.; Hahn, E.

    1995-03-01

    A facility for coating RF power components with thin films of Ti and/or TiN has been in operation for some time at Fermilab supporting the Accelerator Division RF development work and the TESLA program. It has been experimentally verified that such coatings improve the performance of these components as far as withstanding higher electric fields. This is attributed to a reduction in the secondary electron emission coefficient of the surfaces when coated with a thin film containing titanium. The purpose of this Technical Memorandum is to describe the facility and the procedure used

  3. Charge radii and moments of tin nuclei by laser spectroscopy

    Anselment, M.; Bekk, K.; Hanser, A.; Hoeffgen, H.; Meisel, G.; Goering, S.; Rebel, H.; Schatz, G.

    1986-04-01

    The isotope shift and hyperfine structure of the optical Sn I resonance transition 5p 2 3 P 0 ->5p6s 3 P 1 at lambda=286.3 nm have been studied for 18 Sn nuclei including 2 isomers. Laser induced resonance fluorescence from a collimated atomic beam of tin was observed using a tunable cw dye laser with frequency doubler. The electromagnetic nuclear moments and changes of the mean square charge radii of the nuclear charge distributions were determined. The results are discussed with respect to the information they provide on the nuclear structure of the nuclei investigated; they are compared with various theoretical models. (orig.) [de

  4. Pretreatment of Platinum/Tin Oxide-Catalyst

    Hess, Robert V.; Paulin, Patricia A.; Miller, Irvin M.; Schryer, David R.; Sidney, Barry D.; Wood, George M.; Upchurch, Billy T.; Brown, Kenneth G.

    1987-01-01

    Addition of CO to He pretreatment doubles catalytic activity. In sealed, high-energy, pulsed CO2 laser, CO and O2 form as decomposition products of CO2 in laser discharge zone. Products must be recombined, because oxygen concentration of more than few tenths of percent causes rapid deterioration of power, ending in unstable operation. Promising low-temperature catalyst for combining CO and O2 is platinum on tin oxide. New development increases activity of catalyst so less needed for recombination process.

  5. Reactivation of a tin oxide-containing catalyst

    Upchurch, Billy T. (Inventor); Miller, Irvin M. (Inventor); Brown, Kenneth G. (Inventor); Hess, Robert V. (Inventor); Schryer, David R. (Inventor); Sidney, Barry D. (Inventor); Wood, George M. (Inventor); Paulin, Patricia A. (Inventor)

    1989-01-01

    A method for the reactivation of a tin oxide-containing catalyst of a CO.sub.2 laser is provided. First, the catalyst is pretreated by a standard procedure. When the catalyst experiences diminished activity during usage, the heated zone surrounding the catalyst is raised to a temperature which is the operating temperature of the laser and 400.degree. C. for approximately one hour. The catalyst is exposed to the same laser gas mixture during this period. The temperature of the heated zone is then lowered to the operating temperature of the CO.sub.2 laser.

  6. High dislocation density of tin induced by electric current

    Liao, Yi-Han; Liang, Chien-Lung; Lin, Kwang-Lung; Wu, Albert T.

    2015-01-01

    A dislocation density of as high as 10 17 /m 2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10 3 A/ cm 2 . The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining

  7. Synthesis and shape control of copper tin sulphide nanocrystals and formation of gold-copper tin sulphide hybrid nanostructures

    Kruszynska, Marta; Parisi, Juergen; Kolny-Olesiak, Joanna

    2014-01-01

    Hexagonal prismatic Cu 3 SnS 4 nanoparticles and nanorods were synthesized by a hot-injection procedure. Changing the reaction conditions leads to the formation of different shapes. When oleylamine is used as a solvent, hexagonal prismatic particles are obtained, while a reaction in octadecene results in the formation of nanorods. The growth process of copper tin sulphide starts with the formation of djurleite copper sulphide seeds. Their reaction with Sn 4+ ions leads to the formation of Cu 3 SnS 4 . These Cu 3 SnS 4 nanocrystals form Au-Cu 3 SnS 4 hybrid nanostructures by reaction with gold seeds.

  8. Tin dioxide sol-gel derived films doped with platinum and antimony deposited on porous silicon

    Savaniu, C.; Arnautu, A.; Cobianu, C.; Craciun, G.; Flueraru, C.; Zaharescu, M.; Parlog, C.; Paszti, F.; van den Berg, Albert

    1999-01-01

    SnO2 sol-gel derived thin films doped simultaneously with Pt and Sb are obtained and reported for the first time. The Sn sources were tin(IV) ethoxide or tin(II) ethylhexanoate, while hexachloroplatinic acid (H2PtCl6) and antimony chloride (SbCl3) were used as platinum and antimony sources,

  9. Occupational irritant contact folliculitis associated with triphenyl tin fluoride (TPTF) exposure

    Andersen, Klaus Ejner; Petri, M

    1982-01-01

    Triphenyl tin fluoride (TPTF) is a bioactive organo-tin compound used in concentrations 2-12% as anti-foulants in boat paints. The chemical is moderately toxic to the skin. An occupational irritant contact folliculitis from TPTF in a marine paint plant worker is described. Contact allergy...

  10. 77 FR 32998 - Tin- and Chromium-Coated Steel Sheet From Japan

    2012-06-04

    ...-Coated Steel Sheet From Japan Determination On the basis of the record \\1\\ developed in the subject five... order on tin- and chromium-coated steel sheet from Japan would be likely to lead to continuation or... USITC Publication 4325 (May 2012), entitled Tin- and Chromium-Coated Steel Sheet from Japan...

  11. Self-consistent approximation for muffin-tin models of random substitutional alloys with environmental disorder

    Kaplan, T.; Gray, L.J.

    1984-01-01

    The self-consistent approximation of Kaplan, Leath, Gray, and Diehl is applied to models for substitutional random alloys with muffin-tin potentials. The particular advantage of this approximation is that, in addition to including cluster scattering, the muffin-tin potentials in the alloy can depend on the occupation of the surrounding sites (i.e., environmental disorder is included)

  12. Selective Recovery of Mushistonite from Gravity Tailings of Copper–Tin Minerals in Tajikistan

    Lei Sun

    2017-12-01

    Full Text Available Tajikistan has abundant copper–tin resources. In this study, mineralogical analysis of copper–tin ores from the Mushiston deposit of Tajikistan indicates that tin mainly occurred in mushistonite, cassiterite, and stannite, while copper mainly occurred in mushistonite, malachite, azurite, and stannite. The total grades of tin (Sn and copper (Cu were 0.65% and 0.66%, respectively, and the dissemination size of copper–tin minerals ranged from 4 μm to over 200 μm. Coarse particles of copper–tin minerals were partially recovered by shaking table concentrators with a low recovery rate. Based on the mineralogical analysis, flotation recovery was used for the first time on the fine particles of copper–tin minerals, including mushistonite, from shaking table tailings. Single factor flotation experiments, open circuit flotation tests, and closed circuit flotation tests were performed to determine the optimized flotation conditions. Results indicated that benzohydroxamic acid (C6H5CONHOH and lead nitrate could effectively recover the mushistonite, cooperating with other depressants. The final concentrate contained 13.28% Sn, with a recovery rate of 61.56%, and 18.51% Cu, with a recovery rate of 86.52%. This method proved effective for the exploitation and use of this type of copper–tin resource in Tajikistan.

  13. Moessbauer study of the lattice dynamics of tin atoms in antimony

    Sitek, J.

    1975-01-01

    The Moessbauer effect probability f was investigated for tin impurity atoms in the SnSb solution (the impurity varied from 3 at% to 15 at%). The absolute value of the Moessbauer effect probability was determined from Moessbauer absorption spectra by the area method using a calibration absorber of a β-tin foil with known f. (Z.S.)

  14. Fast, versatile x-ray fluorescence method for measuring tin in impregnated wood

    Drabæk, I.; Christensen, Leif Højslet

    1985-01-01

    The present paper describes an energy-dispersive x-ray fluorescence method for measuring tin in bis(tri-n-butyl)tin-oxide impregnated wood. The proposed method is of the backscatter/fundamental parameter type. Its versatility, precision, and accuracy is demonstrated by analyses of eleven samples...

  15. The electrochemical deposition of tin-nickel alloys and the corrosion properties of the coating

    Jellesen, Morten Stendahl; Møller, Per

    2005-01-01

    The electrodeposition of tin/nickel (65/35 wt%) is a unique coating process because of the deposition of an intermetallic phase of nickel and tin, which cannot be formed by any pyrometallurgical process. From thermodynamic calculations it can be shown that intermetallic phases can be formed throu...

  16. Reversible storage of lithium in a rambutan-like tin-carbon electrode.

    Deng, Da; Lee, Jim Yang

    2009-01-01

    Fruity electrodes: A simple bottom-up self-assembly method was used to fabricate rambutan-like tin-carbon (Sn@C) nanoarchitecture (see scheme, green Sn) to improve the reversible storage of lithium in tin. The mechanism of the growth of the pear-like hairs is explored.

  17. Tin- and Lead-Based Perovskite Solar Cells under Scrutiny: An Environmental Perspective

    Serrano-Luján, Lucía; Espinosa Martinez, Nieves; Larsen-Olsen, Thue Trofod

    2015-01-01

    The effect of substituting lead with tin in perovskite-based solar cells (PSCs) has shows that lead is preferred over tin by a lower cumulative energy demand. The results, which also include end-of-life management, show that a recycling scenario that carefully handles emission of lead enables use...

  18. 21 CFR 189.301 - Tin-coated lead foil capsules for wine bottles.

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Tin-coated lead foil capsules for wine bottles. 189... SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) SUBSTANCES PROHIBITED FROM USE IN HUMAN FOOD... lead foil capsules for wine bottles. (a) Tin-coated lead foil is composed of a lead foil coated on one...

  19. Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance

    James, R.B.; Lund, J. [Sandia National Labs., Livermore, CA (United States); Yoon, H. [Sandia National Labs., Livermore, CA (United States)]|[Univ. of California, Los Angeles, CA (United States)] [and others

    1997-09-01

    The material showing the greatest promise today for production of large-volume gamma-ray spectrometers operable at room temperature is cadmium zinc telluride (CZT). Unfortunately, because of deficiencies in the quality of the present material, high-resolution CZT spectrometers have thus far been limited to relatively small dimensions, which makes them inefficient at detecting high photon energies and ineffective for weak radiation signals except in near proximity. To exploit CZT fully, it will be necessary to make substantial improvements in the material quality. Improving the material involves advances in the purity, crystallinity, and control of the electrical compensation mechanism. Sandia National Laboratories, California, in close collaboration with US industry and academia, has initiated efforts to develop a detailed understanding of the underlying material problems limiting the performance of large volume gamma-ray spectrometers and to overcome them through appropriate corrections therein. A variety of analytical and numerical techniques are employed to quantify impurities, compositional and stoichiometric variations, crystallinity, strain, bulk and surface defect states, carrier mobilities and lifetimes, electric field distributions, and contact chemistry. Data from these measurements are correlated with spatial maps of the gamma-ray and alpha particle spectroscopic response to determine improvements in the material purification, crystal growth, detector fabrication, and surface passivation procedures. The results of several analytical techniques will be discussed. The intended accomplishment of this work is to develop a low-cost, high-efficiency CZT spectrometer with an active volume of 5 cm{sup 3} and energy resolution of 1--2% (at 662 keV), which would give the US a new field capability for screening radioactive substances.

  20. Comparison between stress myocardial perfusion SPECT recorded with cadmium-zinc-telluride and Anger cameras in various study protocols

    Verger, Antoine; Karcher, Gilles; Djaballah, Wassila; Fourquet, Nicolas; Rouzet, Francois; Le Guludec, Dominique; Koehl, Gregoire; Roch, Veronique; Imbert, Laetitia; Poussier, Sylvain; Fay, Renaud; Marie, Pierre-Yves

    2013-01-01

    The results of stress myocardial perfusion SPECT could be enhanced by new cadmium-zinc-telluride (CZT) cameras, although differences compared to the results with conventional Anger cameras remain poorly known for most study protocols. This study was aimed at comparing the results of CZT and Anger SPECT according to various study protocols while taking into account the influence of obesity. The study population, which was from three different institutions equipped with identical CZT cameras, comprised 276 patients referred for study using protocols involving 201 Tl (n = 120) or 99m Tc-sestamibi injected at low dose at stress ( 99m Tc-Low; stress/rest 1-day protocol; n = 110) or at high dose at stress ( 99m Tc-High; rest/stress 1-day or 2-day protocol; n = 46). Each Anger SPECT scan was followed by a high-speed CZT SPECT scan (2 to 4 min). Agreement rates between CZT and Anger SPECT were good irrespective of the study protocol (for abnormal SPECT, 201 Tl 92 %, 99m Tc-Low 86 %, 99m Tc-High 98 %), although quality scores were much higher for CZT SPECT with all study protocols. Overall correlations were high for the extent of myocardial infarction (r = 0.80) and a little lower for ischaemic areas (r = 0.72), the latter being larger on Anger SPECT (p 201 Tl or 99m Tc-Low group and in whom stress myocardial counts were particularly low with Anger SPECT (228 ± 101 kcounts) and dramatically enhanced with CZT SPECT (+279 ± 251 %). Concordance between the results of CZT and Anger SPECT is good regardless of study protocol and especially when excluding obese patients who have low-count Anger SPECT and for whom myocardial counts are dramatically enhanced on CZT SPECT. (orig.)

  1. Comparison between stress myocardial perfusion SPECT recorded with cadmium-zinc-telluride and Anger cameras in various study protocols

    Verger, Antoine; Karcher, Gilles [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); INSERM U947, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Djaballah, Wassila [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); INSERM U947, Nancy (France); Fourquet, Nicolas [Clinique Pasteur, Toulouse (France); Rouzet, Francois; Le Guludec, Dominique [AP-HP, Hopital Bichat, Department of Nuclear Medicine, Paris (France); INSERM U 773 Inserm and Denis Diderot University, Paris (France); Koehl, Gregoire; Roch, Veronique [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Imbert, Laetitia [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Centre Alexis Vautrin, Department of Radiotherapy, Vandoeuvre (France); Poussier, Sylvain [INSERM U947, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); Fay, Renaud [INSERM, Centre d' Investigation Clinique CIC-P 9501, Nancy (France); Marie, Pierre-Yves [CHU-Nancy, Department of Nuclear Medicine, Nancy (France); Nancyclotep Experimental Imaging Platform, Nancy (France); INSERM U961, Nancy (France); Hopital de Brabois, CHU-Nancy, Medecine Nucleaire, Vandoeuvre-les-Nancy (France)

    2013-03-15

    The results of stress myocardial perfusion SPECT could be enhanced by new cadmium-zinc-telluride (CZT) cameras, although differences compared to the results with conventional Anger cameras remain poorly known for most study protocols. This study was aimed at comparing the results of CZT and Anger SPECT according to various study protocols while taking into account the influence of obesity. The study population, which was from three different institutions equipped with identical CZT cameras, comprised 276 patients referred for study using protocols involving {sup 201}Tl (n = 120) or {sup 99m}Tc-sestamibi injected at low dose at stress ({sup 99m}Tc-Low; stress/rest 1-day protocol; n = 110) or at high dose at stress ({sup 99m}Tc-High; rest/stress 1-day or 2-day protocol; n = 46). Each Anger SPECT scan was followed by a high-speed CZT SPECT scan (2 to 4 min). Agreement rates between CZT and Anger SPECT were good irrespective of the study protocol (for abnormal SPECT, {sup 201}Tl 92 %, {sup 99m}Tc-Low 86 %, {sup 99m}Tc-High 98 %), although quality scores were much higher for CZT SPECT with all study protocols. Overall correlations were high for the extent of myocardial infarction (r = 0.80) and a little lower for ischaemic areas (r = 0.72), the latter being larger on Anger SPECT (p < 0.001). This larger extent was mainly observed in 50 obese patients who were in the {sup 201}Tl or {sup 99m}Tc-Low group and in whom stress myocardial counts were particularly low with Anger SPECT (228 {+-} 101 kcounts) and dramatically enhanced with CZT SPECT (+279 {+-} 251 %). Concordance between the results of CZT and Anger SPECT is good regardless of study protocol and especially when excluding obese patients who have low-count Anger SPECT and for whom myocardial counts are dramatically enhanced on CZT SPECT. (orig.)

  2. Myocardial perfusion imaging with a cadmium zinc telluride-based gamma camera versus invasive fractional flow reserve

    Mouden, Mohamed [Isala klinieken, Department of Cardiology, Zwolle (Netherlands); Isala klinieken, Department of Nuclear Medicine, Zwolle (Netherlands); Ottervanger, Jan Paul; Timmer, Jorik R. [Isala klinieken, Department of Cardiology, Zwolle (Netherlands); Knollema, Siert; Reiffers, Stoffer; Oostdijk, Ad H.J.; Jager, Pieter L. [Isala klinieken, Department of Nuclear Medicine, Zwolle (Netherlands); Boer, Menko-Jan de [University Medical Centre Nijmegen, Department of Cardiology, Nijmegen (Netherlands)

    2014-05-15

    Recently introduced ultrafast cardiac SPECT cameras with cadmium zinc telluride-based (CZT) detectors may provide superior image quality allowing faster acquisition with reduced radiation doses. Although the level of concordance between conventional SPECT and invasive fractional flow reserve (FFR) measurement has been studied, that between FFR and CZT-based SPECT is not yet known. Therefore, we aimed to assess the level of concordance between CZT SPECT and FFR in a large patient group with stable coronary artery disease. Both invasive FFR and myocardial perfusion imaging with a CZT-based SPECT camera, using Tc-tetrofosmin as tracer, were performed in 100 patients with stable angina and intermediate grade stenosis on invasive coronary angiography. A cut-off value of <0.75 was used to define abnormal FFR. The mean age of the patients was 64 ± 11 years, and 64 % were men. SPECT demonstrated ischaemia in 31 % of the patients, and 20 % had FFR <0.75. The concordance between CZT SPECT and FFR was 73 % on a per-patient basis and 79 % on a per-vessel basis. Discordant findings were more often seen in older patients and were mainly (19 %) the result of ischaemic SPECT findings in patients with FFR ≥0.75, whereas only 8 % had an abnormal FFR without ischaemia as demonstrated by CZT SPECT. Only 20 - 30 % of patients with intermediate coronary stenoses had significant ischaemia as assessed by CZT SPECT or invasive FFR. CZT SPECT showed a modest degree of concordance with FFR, which is comparable with previous results with conventional SPECT. Further investigations are particularly necessary in patients with normal SPECT and abnormal FFR, especially to determine whether these patients should undergo revascularization. (orig.)

  3. Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance

    James, R.B.; Lund, J.; Yoon, H.

    1997-01-01

    The material showing the greatest promise today for production of large-volume gamma-ray spectrometers operable at room temperature is cadmium zinc telluride (CZT). Unfortunately, because of deficiencies in the quality of the present material, high-resolution CZT spectrometers have thus far been limited to relatively small dimensions, which makes them inefficient at detecting high photon energies and ineffective for weak radiation signals except in near proximity. To exploit CZT fully, it will be necessary to make substantial improvements in the material quality. Improving the material involves advances in the purity, crystallinity, and control of the electrical compensation mechanism. Sandia National Laboratories, California, in close collaboration with US industry and academia, has initiated efforts to develop a detailed understanding of the underlying material problems limiting the performance of large volume gamma-ray spectrometers and to overcome them through appropriate corrections therein. A variety of analytical and numerical techniques are employed to quantify impurities, compositional and stoichiometric variations, crystallinity, strain, bulk and surface defect states, carrier mobilities and lifetimes, electric field distributions, and contact chemistry. Data from these measurements are correlated with spatial maps of the gamma-ray and alpha particle spectroscopic response to determine improvements in the material purification, crystal growth, detector fabrication, and surface passivation procedures. The results of several analytical techniques will be discussed. The intended accomplishment of this work is to develop a low-cost, high-efficiency CZT spectrometer with an active volume of 5 cm 3 and energy resolution of 1--2% (at 662 keV), which would give the US a new field capability for screening radioactive substances

  4. Colorimetric properties of TiN coating implanted by aluminum

    Zhou, Q.G. [Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)]. E-mail: zhouqg99@mails.tsinghua.edu.cn; Bai, X.D. [Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Xue, X.Y. [Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Ling, Y.H. [Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Chen, X.W. [Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Xu, J. [Beijing Great Wall Ti-Gold Corporation, Beijing 100095 (China); Wang, D.R. [Beijing Great Wall Ti-Gold Corporation, Beijing 100095 (China)

    2005-04-05

    TiN coating was prepared by cathodic arc deposition and implanted aluminum using a metal vacuum vapor arc ion source with doses ranging from 5 x 10{sup 16} to 2 x 10{sup 17} ions/cm{sup 2}. The purpose of this work was to determine the dependence of the colorimetric properties of TiN films on the implanting conditions, especially by the aluminum ion implantation. The colorimetry of coatings was evaluated quantitatively in terms of CIE L * a * b *. The color coordinate values L *, a *, and b * provide a numerical representation of the color of the surface. With the dose increasing, the surface color has no obvious change but the surface turns brighter, and a * as well as b * values all decline. The X-ray diffraction patterns showed that the aluminum implantation induced a slight shift of diffraction peaks. X-ray photoemission spectroscopy was employed to analyze the surface valence states. The oxygen in surface top layer does not decrease a * and b * values, it partially combined with nitrogen.

  5. Accommodation of tin in tetragonal ZrO{sub 2}

    Bell, B. D. C.; Grimes, R. W.; Wenman, M. R., E-mail: m.wenman@imperial.ac.uk [Department of Materials and Centre for Nuclear Engineering, Imperial College, London SW7 2AZ (United Kingdom); Murphy, S. T. [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom); Burr, P. A. [Department of Materials and Centre for Nuclear Engineering, Imperial College, London SW7 2AZ (United Kingdom); Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, Menai, New South Wales 2234 (Australia)

    2015-02-28

    Atomic scale computer simulations using density functional theory were used to investigate the behaviour of tin in the tetragonal phase oxide layer on Zr-based alloys. The Sn{sub Zr}{sup ×} defect was shown to be dominant across most oxygen partial pressures, with Sn{sub Zr}{sup ″} charge compensated by V{sub O}{sup ••} occurring at partial pressures below 10{sup −31 }atm. Insertion of additional positive charge into the system was shown to significantly increase the critical partial pressure at which Sn{sub Zr}{sup ″} is stable. Recently developed low-Sn nuclear fuel cladding alloys have demonstrated an improved corrosion resistance and a delayed transition compared to Sn-containing alloys, such as Zircaloy-4. The interaction between the positive charge and the tin defect is discussed in the context of alloying additions, such as niobium and their influence on corrosion of cladding alloys.

  6. Indium tin oxide films prepared via wet chemical route

    Legnani, C.; Lima, S.A.M.; Oliveira, H.H.S.; Quirino, W.G.; Machado, R.; Santos, R.M.B.; Davolos, M.R.; Achete, C.A.; Cremona, M.

    2007-01-01

    In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an α-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 deg. C. A 10 at.% of doping of Sn 4+ ions into an In 2 O 3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10 -3 Ω cm, 2.9 cm 2 /V s and - 3.5 x 10 20 /cm 3 , respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained

  7. The\tutility\tof\tneuroimaging\tin\tthe\tmanagement\tof\tdementia

    Uduak\tE\tWilliams

    2015-10-01

    Full Text Available Dementia is a syndrome of progressive dysfunction of two or more cognitive\tdomains\tassociated\twith\timpairment\tof\tactivities\tof\tdaily\tliving. An understanding of the pathophysiology of dementia and its early diagnosis\tis\timportant\tin\tthe\tpursuit\tof\tpossible\tdisease\tmodifying\ttherapy for\tdementia.\tNeuroimaging\thas\tgreatly\ttransformed\tthis\tfield\tof\tresearch as its function has changed from a mere tool for diagnosing treatable causes of dementia to an instrument for pre-symptomatic diagnosis of dementia. This\treview\tfocuses\ton\tthe\tdiagnostic\tutility\tof\tneuroimaging\tin the\tmanagement\tof\tprogressive\tdementias.\tStructural\timaging\ttechniques like computerized tomography scan and magnetic resonance imaging highlights the anatomical, structural and volumetric details of the brain; while functional imaging techniques such as positron emission tomography, arterial spin labeling, single photon emission computerized tomography\tand\tblood\toxygen\tlevel-dependent\tfunctional\tmagnetic\tresonance\timaging\tfocuses\ton\tchemistry, circulatory\tstatus\tand\tphysiology\tof\tthe\tdifferent\tbrain\tstructures\tand\tregions.

  8. A variable resolution right TIN approach for gridded oceanographic data

    Marks, David; Elmore, Paul; Blain, Cheryl Ann; Bourgeois, Brian; Petry, Frederick; Ferrini, Vicki

    2017-12-01

    Many oceanographic applications require multi resolution representation of gridded data such as for bathymetric data. Although triangular irregular networks (TINs) allow for variable resolution, they do not provide a gridded structure. Right TINs (RTINs) are compatible with a gridded structure. We explored the use of two approaches for RTINs termed top-down and bottom-up implementations. We illustrate why the latter is most appropriate for gridded data and describe for this technique how the data can be thinned. While both the top-down and bottom-up approaches accurately preserve the surface morphology of any given region, the top-down method of vertex placement can fail to match the actual vertex locations of the underlying grid in many instances, resulting in obscured topology/bathymetry. Finally we describe the use of the bottom-up approach and data thinning in two applications. The first is to provide thinned, variable resolution bathymetry data for tests of storm surge and inundation modeling, in particular hurricane Katrina. Secondly we consider the use of the approach for an application to an oceanographic data grid of 3-D ocean temperature.

  9. Amdel on-line analyser at Rooiberg Tin Limited

    Owen, T.V.

    1987-01-01

    An Amdel on line analysis system was installed on the 'A' mine tin flotation plant at Rooiberg in April 1984. The motivation for the installation was made on account of the large variations in the feed grade to the plant and the resulting need for rapid operational adjustments to control concentrate grades thereby maximising the financial returns. An 'on-line' analyser system presented itself as a suitable alternative to the existing control method of smaller laboratory x-ray fluorescence analysers. On the system as installed at Rooiberg, two probes were fitted in each analysis zone, viz a density probe using high energy gamma radiation from a Cesium 127 source and a specific element absorption probe using low energy gamma radiation from a Americium 241 source. The signals as received from the probes are fed to a line receiver unit in the control room where a micro computer is doing the processing and prints out the information as required. Several advantages of this type of installation were gained at Rooiberg Tin Limited

  10. Acetic acid-confined synthesis of uniform three-dimensional (3D) bismuth telluride nanocrystals consisting of few-quintuple-layer nanoplatelets

    Yuan, Qiang; Radar, Kelly; Hussain, Muhammad Mustafa

    2011-01-01

    High-selectivity, uniform three-dimensional (3D) flower-like bismuth telluride (Bi2Te3) nanocrystals consisting of few-quintuple-layer nanoplatelets with a thickness down to 4.5 nm were synthesized for the first time by a facile, one-pot polyol method with acetic acid as the structure-director. Micrometre-sized 2D films and honeycomb-like spheres can be obtained using the uniform 3D Bi2Te3 nanocrystals as building blocks. © The Royal Society of Chemistry 2011.

  11. Electrochemical migration of tin in electronics and microstructure of the dendrites

    Minzari, Daniel; Grumsen, Flemming Bjerg; Jellesen, Morten Stendahl

    2011-01-01

    The macro-, micro-, and nano-scale morphology and structure of tin dendrites, formed by electrochemical migration on a surface mount ceramic chip resistor having electrodes consisting of tin with small amounts of Pb (∼2wt.%) was investigated by scanning electron microscopy and transmission electr...... by the dehydration of the hydrated oxide originally formed in solution ex-situ in ambient air.......The macro-, micro-, and nano-scale morphology and structure of tin dendrites, formed by electrochemical migration on a surface mount ceramic chip resistor having electrodes consisting of tin with small amounts of Pb (∼2wt.%) was investigated by scanning electron microscopy and transmission electron...... microscopy including Energy dispersive X-ray spectroscopy and electron diffraction. The tin dendrites were formed under 5 or 12V potential bias in 10ppm by weight NaCl electrolyte as a micro-droplet on the resistor during electrochemical migration experiments. The dendrites formed were found to have...

  12. Synthesis of antimony-doped tin oxide (ATO) nanoparticles by the nitrate-citrate combustion method

    Zhang Jianrong; Gao Lian

    2004-01-01

    Antimony-doped tin oxide (ATO) nanoparticles having rutile structure have been synthesized by the combustion method using citric acid (CA) as fuel and nitrate as an oxidant, the metal sources were granulated tin and Sb 2 O 3 . The influence of citric acid (fuel) to metal ratio on the average crystallite size, specific surface area and morphology of the nanoparticles has been investigated. X-ray diffraction showed the tin ions were reduced to elemental tin during combustion reaction. The average ATO crystallite size increased with the increase of citric acid (fuel). Powder morphology and the comparison of crystallite size and grain size shows that the degree of agglomeration of the powder decreased with an increase of the ratio. The highest specific surface area was 37.5 m 2 /g when the citric acid to tin ratio was about 6

  13. VO2 /TiN Plasmonic Thermochromic Smart Coatings for Room-Temperature Applications.

    Hao, Qi; Li, Wan; Xu, Huiyan; Wang, Jiawei; Yin, Yin; Wang, Huaiyu; Ma, Libo; Ma, Fei; Jiang, Xuchuan; Schmidt, Oliver G; Chu, Paul K

    2018-03-01

    Vanadium dioxide/titanium nitride (VO 2 /TiN) smart coatings are prepared by hybridizing thermochromic VO 2 with plasmonic TiN nanoparticles. The VO 2 /TiN coatings can control infrared (IR) radiation dynamically in accordance with the ambient temperature and illumination intensity. It blocks IR light under strong illumination at 28 °C but is IR transparent under weak irradiation conditions or at a low temperature of 20 °C. The VO 2 /TiN coatings exhibit a good integral visible transmittance of up to 51% and excellent IR switching efficiency of 48% at 2000 nm. These unique advantages make VO 2 /TiN promising as smart energy-saving windows. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Numerical Simulation of Wave Propagation and Phase Transition of Tin under Shock-Wave Loading

    Hai-Feng, Song; Hai-Feng, Liu; Guang-Cai, Zhang; Yan-Hong, Zhao

    2009-01-01

    We undertake a numerical simulation of shock experiments on tin reported in the literature, by using a multiphase equation of state (MEOS) and a multiphase Steinberg Guinan (MSG) constitutive model for tin in the β, γ and liquid phases. In the MSG model, the Bauschinger effect is considered to better describe the unloading behavior. The phase diagram and Hugoniot of tin are calculated by MEOS, and they agree well with the experimental data. Combined with the MEOS and MSG models, hydrodynamic computer simulations are successful in reproducing the measured velocity profile of the shock wave experiment. Moreover, by analyzing the mass fraction contour as well as stress and temperature profiles of each phase for tin, we further discuss the complex behavior of tin under shock-wave loading. (condensed matter: structure, mechanical and thermal properties)

  15. Assessment of organotin and tin-free antifouling paints contamination in the Korean coastal area.

    Lee, Mi-Ri-Nae; Kim, Un-Jung; Lee, In-Seok; Choi, Minkyu; Oh, Jeong-Eun

    2015-10-15

    Twelve organotins (methyl-, octyl-, butyl-, and phenyl-tin), and eight tin-free antifouling paints and their degradation products were measured in marine sediments from the Korean coastal area, and Busan and Ulsan bays, the largest harbor area in Korea. The total concentration of tin-free antifouling paints was two- to threefold higher than the total concentration of organotins. Principal component analysis was used to identify sites with relatively high levels of contamination in the inner bay area of Busan and Ulsan bays, which were separated from the coastal area. In Busan and Ulsan bays, chlorothalonil and DMSA were more dominant than in the coastal area. However, Sea-Nine 211 and total diurons, including their degradation products, were generally dominant in the Korean coastal area. The concentrations of tin and tin-free compounds were significantly different between the east and west coasts. Copyright © 2015 Elsevier Ltd. All rights reserved.

  16. Research into tin and arsenical copper artefacts using nuclear analytical techniques

    Grant, M.R.

    1995-01-01

    This study includes the chemical analysis, sourcing and historical metallurgy of tin and arsenical copper artefacts discovered at Rooiberg and elsewhere in the Northern Transvaal and at Great Zimbabwe. A complete chemical analysis method for tin and cassiterite is presented, based on INAA (instrumental neutron activation analysis) and supplemented by PIXE or AAS for elements such as lead, bismuth and niobium. This is apparently the first study in which tin artefacts were analysed by INAA without chemical processing of the samples. INAA and PIXE returned the same results when a homogenized tin alloy block was analysed, but the structure and distribution of hardhead phases appear to produce an iron quantification problem in ancient tin. Ores and slags were analysed for light matrix elements by XRF or PIXE and INAA for the heavy trace metals. 108 refs., 24 figs., 130 tabs

  17. NASA GSFC Tin Whisker Homepage http://nepp.nasa.gov/whisker

    Shaw, Harry

    2000-01-01

    The NASA GSFC Tin Whisker Homepage provides general information and GSFC Code 562 experimentation results regarding the well known phenomenon of tin whisker formation from pure tin plated substrates. The objective of this www site is to provide a central repository for information pertaining to this phenomenon and to provide status of the GSFC experiments to understand the behavior of tin whiskers in space environments. The Tin Whisker www site is produced by Code 562. This www site does not provide information pertaining to patented or proprietary information. All of the information contained in this www site is at the level of that produced by industry and university researchers and is published at international conferences.

  18. Effects on stress rupture life and tensile strength of tin additions to Inconel 718

    Dreshfield, R. L.; Johnson, W.

    1982-01-01

    Because Inconel 718 represents a major use of columbium and a large potential source of columbium for aerospace alloys could be that of columbium derived from tin slags, the effects of tin additions to Inconel 718 at levels which might be typical of or exceed those anticipated if tin slag derived columbium were used as a melting stock were investigated. Tin was added to 15 pound Inconel 718 heats at levels varying from none added to approximately 10,000 ppm (1 wt%). Limited 1200 F stress rupture testing was performed at stresses from 68,000 to 115,000 psi and a few tensile tests were performed at room temperature, 800 and 1200 F. Additions of tin in excess of 800 ppm were detrimental to ductility and stress rupture life.

  19. 76 FR 58536 - Tin- and Chromium-Coated Steel Sheet From Japan; Notice of Commission Determination To Conduct a...

    2011-09-21

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 731-TA-860 (Second Review)] Tin- and Chromium... Concerning the Antidumping Duty Order on Tin- and Chromium-Coated Steel Sheet From Japan AGENCY: United.... 1675(c)(5)) to determine whether revocation of the antidumping duty order on tin- and chromium-coated...

  20. Stress analysis and microstructure of PVD monolayer TiN and multilayer TiN/(Ti,Al)N coatings

    Carvalho, NJM; Zoestbergen, E; Kooi, BJ; De Hosson, JTM

    2003-01-01

    Two PVD titanium nitride based coatings; monolayer TiN and multilayer resulting from the stacking of TiN and (Ti,Al)N layers were evaluated with respect to their stress state and microstructure. The TiN was deposited by triode evaporation ion plating, whereas the TiN/(Ti,AI)N was deposited using a

  1. 76 FR 60001 - Certain Tin Mill Products From Japan; Final Results of the Second Expedited Sunset Review of the...

    2011-09-28

    ... DEPARTMENT OF COMMERCE International Trade Administration [A-588-854] Certain Tin Mill Products... duty order on certain tin mill products from Japan, pursuant to section 751(c) of the Tariff [[Page... on certain tin mill products from Japan pursuant to section 751(c) of the Act. See Initiation of Five...

  2. A High Current Density Low Cost Niobium 3 Tin Titanium Doped Conductor Utilizing A Novel Internal Tin Process

    Bruce A Zeitlin

    2005-01-01

    An internal tin conductor has been developed using a Mono Element Internal Tin (MEIT) with an integral Nb barrier surrounding the Nb filaments. High current densities of 3000 A/mm2+ at 12 T and 1800 A/mm2 at 15 T have been achieved in conductors as small as 0.152 mm with the use of Nb7.5Ta filaments and Ti in the Sn core. In contrast, conductors with pure Nb and Ti in the Sn achieved 2700 A/mm2 at 12 T. Two internal fins, developed and patented on the project, were introduced into the filament array and reduced the effective filament diameter (Deff) by 38%. Additional fins will further reduce Deff The conductor was produced from 152.4 mm diameter billets to produce wire as small as 0.152 mm. The process promises be scaleable to 304 mm diameter billets yielding wire of 0.304 mm diameter. The MEIT process wire was easy to draw with relatively few breaks. The cost of this conductor in large production quantities based on the cost model presented could meet the 1.5 $/kilo amp meter(KAM) target of the HEP community

  3. Sources and historical record of tin and butyl-tin species in a Mediterranean bay (Toulon Bay, France).

    Pougnet, Frédérique; Schäfer, Jörg; Dutruch, Lionel; Garnier, Cédric; Tessier, Erwan; Dang, Duc Huy; Lanceleur, Laurent; Mullot, Jean-Ulrich; Lenoble, Véronique; Blanc, Gérard

    2014-05-01

    Concentrations of inorganic tin (Sn(inorg)), tributyltin (TBT) and its degradation products dibutyltin (DBT) and monobutyltin (MBT) were measured in surface sediments and in two cores from the Toulon Bay, hosting the major French military harbour. Anticipating planned dredging, the aim of the present work is to map and evaluate for the first time the recent and historic contamination of these sediments by inorganic and organic Sn species derived from antifouling paints used for various naval domains including military, trade, tourism and leisure. Tin and butyl-Sn concentrations in the bay varied strongly (4 orders of magnitude), depending on the site, showing maximum values near the shipyards. The concentrations of total Sn (1.3-112 μg g(-1)), TBT (product Sn(inorgBT) is by far the dominant species after 10-12 half-life periods and (c) using recent data to reliably assess former TBT contamination requires the use of a modified butyl-Sn degradation index BDI(mod). Resuspension of extremely contaminated subsurface sediments by the scheduled dredging will probably result in mobilization of important amounts of butyl-Sn species.

  4. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

  5. Microstructure and growth mechanism of tin whiskers on RESn3 compounds

    Li Caifu; Liu Zhiquan

    2013-01-01

    Graphical abstract: Large amount of intact tin whiskers were firstly prepared without post handling, and their microstructures were investigated systematically with TEM. A growth model was proposed to explain the observed growth characteristics from Sn–RE alloys. - Abstract: An exclusive method was developed to prepare intact tin whiskers as transmission electron microscope specimens, and with this technique in situ observation of tin whisker growth from RESn 3 (RE = Nd, La, Ce) film specimen was first achieved. Electron irradiation was discovered to have an effect on the growth of a tin whisker through its root. Large quantities of tin whiskers with diameters from 20 nm to 10 μm and lengths ranging from 50 nm to 500 μm were formed at a growth rate of 0.1–1.8 nm s −1 on the surface of RESn 3 compounds. Most (>85%) of these tin whiskers have preferred growth directions of 〈1 0 0〉, 〈0 0 1〉, 〈1 0 1〉 and 〈1 0 3〉, as determined by statistics. This kind of tin whisker is single-crystal β-Sn even if it has growth striations, steps and kinks, and no dislocations or twin or grain boundaries were observed within the whisker body. RESn 3 compounds undergo selective oxidation during whisker growth, and the oxidation provides continuous tin atoms for tin whisker growth until they are exhausted. The driving force for whisker growth is the compressive stress resulting from the restriction of the massive volume expansion (38–43%) during the oxidation by the surface RE(OH) 3 layer. Tin atoms diffuse and flow to feed the continuous growth of tin whiskers under a compressive stress gradient formed from the extrusion of tin atoms/clusters at weak points on the surface RE(OH) 3 layers. A growth model was proposed to discuss the characteristics and growth mechanism of tin whiskers from RESn 3 compounds.

  6. Defect Engineering and Interface Phenomena in Tin Oxide

    Albar, Arwa

    2017-04-05

    The advance in transparent electronics requires high-performance transparent conducting oxide materials. The microscopic properties of these materials are sensitive to the presence of defects and interfaces and thus fundamental understanding is required for materials engineering. In this thesis, first principles density functional theory is used to investigate the possibility of tuning the structural, electronic and magnetic properties of tin oxide by means of defects and interfaces. Our aim is to reveal unique properties and the parameters to control them as well as to explain the origin of unique phenomena in oxide materials. The stability of native defect in tin monoxide (SnO) under strain is investigated using formation energy calculations. We find that the conductivity (which is controlled by native defects) can be switched from p-type to either n-type or undoped semiconducting by means of applied pressure. We then target inducing magnetism in SnO by 3d transition metal doping. We propose that V doping is efficient to realize spin polarization at high temperature. We discuss different tin oxide interfaces. Metallic states are found to form at the SnO/SnO2 interface with electronic properties that depend on the interface terminations. The origin of these states is explained in terms of charge transfer caused by chemical bonding and band alignment. For the SnO/SnO2 heterostructure, we observe the formation of a two dimensional hole gas at the interface, which is surprising as it cannot be explained by the standard polar catastrophe model. Thus, we propose a charge density discontinuity model to explain our results. The model can be generalized to other polar-polar interfaces. Motivated by technological applications, the electronic and structural properties of the MgO (100)/SnO2 (110) interface are investigated. Depending on the interface termination, we observe the formation of a two dimensional electron gas or spin polarized hole gas. Aiming to identify further

  7. Large-scale synthesis of lead telluride (PbTe) nanotube-based nanocomposites with tunable morphology, crystallinity and thermoelectric properties

    Park, Kee-Ryung; Cho, Hong-Baek; Song, Yoseb; Kim, Seil; Kwon, Young-Tae; Ryu, Seung Han; Lim, Jae-Hong; Lee, Woo-Jin; Choa, Yong-Ho

    2018-04-01

    A few millimeter-long lead telluride (PbTe) hollow nanofibers with thermoelectric properties was synthesized for the first time with high through manner via three-step sequential process of electrospinning, electrodeposition and cationic exchange reaction. As-synthesized electrospun Ag nanofibers with ultra-long aspect ratio of 10,000 were Te electrodeposited to obtain silver telluride nanotubes and underwent cationic exchange reaction in Pb(NO3)2 solution to obtain polycrystalline PbTe nanotubes with average diameter of 100 nm with 20 nm of wall thickness. Variation of the Ag-to-Pb ratio in the AgxTey-PbTe nanocomposites during the cationic exchange reaction enabled to control the thermoelectric properties of resulting 1D hollow nanofibers. The diameter of Ag nanofiber is the key factor to determine the final dimension of the PbTe nanotubes in the topotactic transformation and the content of Ag ion leads to the enhancement of thermoelectric properties in the AgxTey-PbTe nanocomposites. The synthesized 1D nanocomposite mats showed the highest value of Seebeck coefficient of 433 μV/K (at 300 K) when the remained Ag content was 30%, while the power factor reached highest to 0.567 μW/mK2 for the pure PbTe nanotubes. The enhancement of thermoelectric properties and the composite crystallinity are elucidated with relation to Ag contents in the resulting 1D nanocomposites.

  8. Polymorphic one-dimensional (N2H4)2ZnTe: soluble precursors for the formation of hexagonal or cubic zinc telluride.

    Mitzi, David B

    2005-10-03

    Two hydrazine zinc(II) telluride polymorphs, (N2H4)2ZnTe, have been isolated, using ambient-temperature solution-based techniques, and the crystal structures determined: alpha-(N2H4)2ZnTe (1) [P21, a = 7.2157(4) Angstroms, b = 11.5439(6) Angstroms, c = 7.3909(4) Angstroms, beta = 101.296(1) degrees, Z = 4] and beta-(N2H4)2ZnTe (2) [Pn, a = 8.1301(5) Angstroms, b = 6.9580(5) Angstroms, c = 10.7380(7) Angstroms, beta = 91.703(1) degrees, Z = 4]. The zinc atoms in 1 and 2 are tetrahedrally bonded to two terminal hydrazine molecules and two bridging tellurium atoms, leading to the formation of extended one-dimensional (1-D) zinc telluride chains, with different chain conformations and packings distinguishing the two polymorphs. Thermal decomposition of (N2H4)2ZnTe first yields crystalline wurtzite (hexagonal) ZnTe at temperatures as low as 200 degrees C, followed by the more stable zinc blende (cubic) form at temperatures above 350 degrees C. The 1-D polymorphs are soluble in hydrazine and can be used as convenient precursors for the low-temperature solution processing of p-type ZnTe semiconducting films.

  9. Indium tin oxide surface smoothing by gas cluster ion beam

    Song, J H; Choi, W K

    2002-01-01

    CO sub 2 cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surfaces and thus to attain highly smooth surfaces. CO sub 2 monomer ions are also bombarded on the ITO surfaces at the same acceleration voltage to compare sputtering phenomena. From the atomic force microscope results, the irradiation of monomer ions makes the hillocks sharper and the surfaces rougher from 1.31 to 1.6 nm in roughness. On the other hand, the irradiation of CO sub 2 cluster ions reduces the height of hillocks and planarize the ITO surfaces as smooth as 0.92 nm in roughness. This discrepancy could be explained by large lateral sputtering yield of the cluster ions and re-deposition of sputtered particles by the impact of the cluster ions on surfaces.

  10. Characterization of tin dioxide film for chemical vapors sensor

    Hafaiedh, I.; Helali, S.; Cherif, K.; Abdelghani, A.; Tournier, G.

    2008-01-01

    Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO 2 ) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 deg. C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing

  11. Molybdenum-tin as a solar cell metallization system

    Boyd, D. W.; Radics, C.

    1981-01-01

    The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

  12. Genotoxicity of indium tin oxide by comet test

    İbrahim Hakkı Ciğerci

    2015-06-01

    Full Text Available Indium tin oxide (ITO is used for liquid crystal display (LCDs, electrochromic displays, flat panel displays, field emission displays, touch or laptop computer screens, cell phones, energy conserving architectural windows, defogging aircraft and automobile windows, heat-reflecting coatings to increase light bulb efficiency, gas sensors, antistatic window coatings, wear resistant layers on glass, nanowires and nanorods because of its unique properties of high electrical conductivity, transparency and mechanical resistance.Genotoxic effects of ITO were investigated on the root cells of Allium cepa by Comet assay. A. cepa roots were treated with the aqueous dispersions of ITO at 5 different concentrations (12.5, 25, 50, 75, and 100 ppm for 4 h. A significant increase in DNA damage was a observed at all concentrations of ITO by Comet assay. These result indicate that ITO exhibit genotoxic activity in A. cepa root meristematic cells.

  13. Chemical Thermodynamics Vol. 12 - Chemical Thermodynamics of tin

    Gamsjaeger, Heinz; GAJDA, Tamas; Sangster, James; Saxena, Surendra K.; Voigt, Wolfgang; Perrone, Jane

    2012-01-01

    This is the 12th volume of a series of expert reviews of the chemical thermodynamics of key chemical elements in nuclear technology and waste management. This volume is devoted to the inorganic species and compounds of tin. The tables contained in Chapters III and IV list the currently selected thermodynamic values within the NEA TDB Project. The database system developed at the NEA Data Bank, see Section II.6, assures consistency among all the selected and auxiliary data sets. The recommended thermodynamic data are the result of a critical assessment of published information. The values in the auxiliary data set, see Tables IV-1 and IV-2, have been adopted from CODATA key values or have been critically reviewed in this or earlier volumes of the series

  14. Determination of stannous tin in radiopharmaceutical cold kits

    Farrant, A.J.

    1979-01-01

    Two methods for determining stannous tin in 'cold kits', used for the preparation of Tc-99m labelled radiopharmaceuticals, have been developed. Both are based on the direct titration of the Sn2 in solution. In the first method titration is with N-bromosuccinimide. Of the materials commonly used as cold kits only albumin has been found to interfere with the determination. The second method is a standard iodometric titration in which starch is used as indicator. None of the materials tested interfere with this procedure. The N-bromosuccinimide method is the method of choice as the re-agent, a solid, can be used without prior standardization. Iodine solution must be standardized daily. The paper describes in detail the methods used and gives examples of kits in which the Sn2 levels have been determined using the described procedures

  15. Gas Sensing Properties of Indium Tin Oxide Nanofibers

    Shiyou Xu

    2009-11-01

    Full Text Available Indium Tin Oxide (ITO nanofibers were fabricated by the electrospinning process. The morphology and crystal structure of ITO nanofibers were studied by SEM, XRD, and TEM respectively. The results showed that polycrystalline ITO nanofibers with an average diameter of 80 nm were obtained. Sensors based on these nanofibers were fabricated by collecting these nanofibers on the integrated sensor platforms. The ITO nanofiber-based sensors showed very fast and high sensor responses at both room and elevated temperatures for NO2. The ratios of resistance in NO2 over that in air were 5 at room temperature and 34 at the optimal working temperature, respectively. The ITO nanofiber-based sensor can be repeatedly used. The details for the fast, enhanced sensor responses and the optimal temperature were discussed.

  16. Etiology of lung cancer at the Gejiu tin mine, China

    Sun, S.Q.

    1987-01-01

    There were 1,724 lung cancer cases registered at the Yunnan Tin Corporation in the period 1954-1986, of which 90% had a history of working underground. Previous exposure to radon, and radon daughters and arsenic is considered to be responsible for the high incidence of lung cancer in these miners. Arsenic may come from inhalation of arsenic-containing ore dust or other environmental arsenic pollution. It appears that radon exposure accounts to a greater extent than arsenic for the increase of lung cancer in these miners. Pathological study was made of 100 surgically resected lung cancer specimens. In this way the distribution and composition of dust retention was determined in relation to peripheral lung cancer

  17. Surface modification of commercial tin coatings by carbon ion implantation

    Liu, L J; Sood, D K; Manory, R R [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

  18. Modeling dynamic beta-gamma polymorphic transition in Tin

    Chauvin, Camille; Montheillet, Frank; Petit, Jacques; CEA Gramat Collaboration; EMSE Collaboration

    2015-06-01

    Solid-solid phase transitions in metals have been studied by shock waves techniques for many decades. Recent experiments have investigated the transition during isentropic compression experiments and shock-wave compression and have highlighted the strong influence of the loading rate on the transition. Complementary data obtained with velocity and temperature measurements around the polymorphic transition beta-gamma of Tin on gas gun experiments have displayed the importance of the kinetics of the transition. But, even though this phenomenon is known, modeling the kinetic remains complex and based on empirical formulations. A multiphase EOS is available in our 1D Lagrangian code Unidim. We propose to present the influence of various kinetic laws (either empirical or involving nucleation and growth mechanisms) and their parameters (Gibbs free energy, temperature, pressure) on the transformation rate. We compare experimental and calculated velocities and temperature profiles and we underline the effects of the empirical parameters of these models.

  19. Coordination compounds of titanium, zirconium, tin, thorium and uranium

    Deshpande, S.G.; Jain, S.C.

    1990-01-01

    Reactions of isatin, furoic acid and picolinic acid have been carried out with titanium tetrachloride, tin tetrachloride, thorium tetrachloride, zirconyl chloride and uranyl nitrate. While 2:3(metal:ligand) type compounds of isatin have been obtained with Ti(IV) and Sn(IV), zirconium(IV), thorium(IV), and uranium(VI) do not react with the ligand under similar experimental conditions. Furoic acid (FAH) and picolinic acid(PicH) form various chloro furoates and picolinates when reacted with TiCl 4 , ZrOCl 2 and ThCl 4 , but do not react with SnCl 4 . The various compounds synthesised have been characterised on the basis of elemental analysis, infrared studies, conductivity and thermogravimetric measurements. (author). 1 tab., 10 refs

  20. Light emission from silicon with tin-containing nanocrystals

    Søren Roesgaard

    2015-07-01

    Full Text Available Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.

  1. Determination of tin(II) in reagents for radiopharmaceuticals

    Morosanova, E.I.; Loginova, K. A.; Epstein, N.B.

    2003-01-01

    The goal of this work is to elaborate a procedure for rapid and simple determination of tin(II) in reagents for preparation of radiopharmaceuticals based on a system albumin-Tc-99m. Original test tools for the determination of various analytes have been suggested in our lab based on the use of small glass tubes (1-2 mm i.d. - 50-70 mm) filled with indicator powders containing suitable immobilized chromogenic reagents. An analytical signal (a length of colored zone which is proportional to the concentration of an analyte) is detected after a sample passing through the indicator tube. Heteropoly compounds are well-known analytical reagents for a photometric determination of various reductants. For elaboration of indicator tubes abilities of Mo,P-heteropoly compounds to give deeply colored blue compounds after reduction were used. (authors)

  2. Surface modification of commercial tin coatings by carbon ion implantation

    Liu, L.J.; Sood, D.K.; Manory, R.R. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

  3. Surface modification of commercial tin coatings by carbon ion implantation

    Liu, L.J.; Sood, D.K.; Manory, R.R.

    1993-01-01

    Commercial TiN coatings of about 2 μm thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10 17 - 8x10 17 ions cm -2 . Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs

  4. Construction of an open tin cell at Inmetro

    da Silva, R.; Teixeira, R. N.

    2013-09-01

    For the last decade, the Thermometry Laboratory of the National Institute of Metrology, Quality and Technology (INMETRO) has been developing its own primary standards. In late 2010, a brand new fixed point cell containing high purity tin (99.9999 %) was constructed as the continuation of a project for constructing metal fixed-point cells in the positive range, in accordance with the temperature fixed-points described by the International Temperature Scale of 1990 (ITS-90) [1]. This is the fourth temperature fixed-point constructed by the laboratory team, which enables the performance of some calibrations without having to rely solely on commercially available cells. The materials and their preparation, the design, the procedures for the construction of the cell, the equipment, the investigation on its performance and its results will be detailed in the present paper. In addition, it is worth mentioning that this cell has recently taken part in a bilateral comparison with the National Physical Laboratory - NPL.

  5. Systematics of the electric dipole response in stable tin isotopes

    Bassauer, Sergej; von Neumann-Cosel, Peter; Tamii, Atsushi

    2018-05-01

    The electric dipole is an important property of heavy nuclei. Precise information on the electric dipole response provides information on the electric dipole polarisability which in turn allows to extract important constraints on neutron-skin thickness in heavy nuclei and parameters of the symmetry energy. The tin isotope chain is particularly suited for a systematic study of the dependence of the electric dipole response on neutron excess as it provides a wide mass range of accessible isotopes with little change of the underlying structure. Recently an inelastic proton scattering experiment under forward angles including 0º on 112,116,124Sn was performed at the Research Centre for Nuclear Physics (RCNP), Japan with a focus on the low-energy dipole strength and the polarisability. First results are presented here. Using data from an earlier proton scattering experiment on 120Sn the gamma strength function and level density are determined for this nucleus.

  6. Systematics of the electric dipole response in stable tin isotopes

    Bassauer Sergej

    2018-01-01

    Full Text Available The electric dipole is an important property of heavy nuclei. Precise information on the electric dipole response provides information on the electric dipole polarisability which in turn allows to extract important constraints on neutron-skin thickness in heavy nuclei and parameters of the symmetry energy. The tin isotope chain is particularly suited for a systematic study of the dependence of the electric dipole response on neutron excess as it provides a wide mass range of accessible isotopes with little change of the underlying structure. Recently an inelastic proton scattering experiment under forward angles including 0º on 112,116,124Sn was performed at the Research Centre for Nuclear Physics (RCNP, Japan with a focus on the low-energy dipole strength and the polarisability. First results are presented here. Using data from an earlier proton scattering experiment on 120Sn the gamma strength function and level density are determined for this nucleus.

  7. The electric dipole response of neutron rich tin isotopes

    Horvat, Andrea; Aumann, Thomas; Rossi, Dominic; Schindler, Fabia [Institut fuer Kernphysik, TU Darmstadt (Germany); Boretzky, Konstanze [GSI Helmholzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Johansen, Jacob [Aarhus University (Denmark); Schrock, Philipp [The University of Tokyo (Japan); Collaboration: R3B-Collaboration

    2016-07-01

    Studies of the dipole response in medium heavy and heavy neutron rich nuclei reveal valuable information about the isospin dependence of the nuclear equation of state. Therefore an experimental campaign investigating both the electric dipole response via Coulomb excitation and neutron removal along the tin isotope chain ({sup 124-134}Sn) has been carried out at the R3B (Reactions with Relativistic Radioactive Beams) setup at GSI (Helmholtzzentrum fuer Schwerionenforschung) for which the analysis is ongoing. The E1 response was induced via relativistic Coulomb scattering by a lead target in inverse kinematics, and calls for a kinematically complete determination of all reaction products in order to reconstruct the excitation energy by means of the invariant mass method. The goal is to obtain the Coulomb excitation cross section up to the adiabatic cut-off energy, covering the giant dipole resonance (GDR) range.

  8. Influence of Microstructure on the Electrical Properties of Heteroepitaxial TiN Films

    Xiang, Wenfeng; Liu, Yuan; Zhang, Jiaqi

    2018-03-01

    Heteroepitaxial TiN films were deposited on Si substrates by pulse laser deposition at different substrate temperature. The microstructure and surface morphology of the films were investigated by X-ray diffraction (θ-2θ scan, ω-scan, and ϕ-scan) and atomic force microscopy. The electrical properties of the prepared TiN films were studied using a physical property measurement system. The experimental results showed that the crystallinity and surface morphology of the TiN films were improved gradually with increasing substrate temperature below 700 °C. Specially, single crystal TiN films were prepared when substrate temperature is above 700 °C; However, the quality of TiN films gradually worsened when the substrate temperature was increased further. The electrical properties of the films were directly correlated to their crystalline quality. At the optimal substrate temperature of 700 °C, the TiN films exhibited the lowest resistivity and highest mobility of 25.7 μΩ cm and 36.1 cm2/V s, respectively. In addition, the mechanism concerning the influence of substrate temperature on the microstructure of TiN films is discussed in detail.

  9. Determination of total tin in silicate rocks by graphite furnace atomic absorption spectrometry

    Elsheimer, H.N.; Fries, T.L.

    1990-01-01

    A method is described for the determination of total tin in silicate rocks utilizing a graphite furnace atomic absorption spectrometer with a stabilized-temperature platform furnace and Zeeman-effect background correction. The sample is decomposed by lithium metaborate fusion (3 + 1) in graphite crucibles with the melt being dissolved in 7.5% hydrochloric acid. Tin extractions (4 + 1 or 8 + 1) are executed on portions of the acid solutions using a 4% solution of tricotylphosphine oxide in methyl isobutyl ketone (MIBK). Ascorbic acid is added as a reducing agent prior to extraction. A solution of diammonium hydrogenphosphate and magnesium nitrate is used as a matrix modifier in the graphite furnace determination. The limit of detection is > 10 pg, equivalent to > 1 ??g l-1 of tin in the MIBK solution or 0.2-0.3 ??g g-61 in the rock. The concentration range is linear between 2.5 and 500 ??g l-1 tin in solution. The precision, measured as relative standard deviation, is < 20% at the 2.5 ??g l-1 level and < 7% at the 10-30 ??g l-1 level of tin. Excellent agreement with recommended literature values was found when the method was applied to the international silicate rock standards BCR-1, PCC-1, GSP-1, AGV-1, STM-1, JGb-1 and Mica-Fe. Application was made to the determination of tin in geological core samples with total tin concentrations of the order of 1 ??g g-1 or less.

  10. Technical problems associated with the production of technetium Tc 99m tin(II) pyrophosphate kits

    Kowalsky, R.J.; Dalton, D.R.

    1981-01-01

    The amount of tin(II) required for adequate reduction, complexation, and stability of technetium Tc 99m pertechnetate in radiopharmaceutical kits, and methods of preventing the loss of tin(II) during formulation of these lyophilized kits are investigated. Tin(II) loss from stannous chloride solutions was studied under several conditions, including room air versus nitrogen atmospheres, during vial filling in a laminar-flow hood with samples frozen on dry ice versus samples at room temperature, during lyophilization, and during storage under refrigerated, ambient, and elevated temperatures. Various amounts of stannous chloride, ranging from 5 to 1000 microgram/ml, were used in formulating sodium pertechnetate Tc 99m kits containing 100 mCi technetium Tc 99m and 0.4 microgram total technetium. Samples were removed at various times; hydrolyzed technetium, pertechnetate, and technetium Tc 99m pyrophosphate were isolated on instant thin-layer chromatography-silica gel and quantified with a scintillation counter. The time necessary to deoxygenate distilled water by nitrogen purging was measured. Several sources of stannous chloride were assayed for tin(II) content. Tin(II) loss occurs rapidly in solution (15% in one hour) unless continuously protected with nitrogen, and during vial filling in a laminar-flow hood unless frozen with dry ice. No substantial loss of tin(II) was detected during lyophilization or during storage of lyophilized product at any of the three temperatures. A minimum of 400 microgram tin(II) was required to provide 90% technetium Tc 99m pyrophosphate at six hours after preparation. Adequate deoxygenation of small quantities (450 ml) of water was accomplished in less than one hour. Some stannous chloride salts were highly oxidized in the dry state, and only high-purity elemental tin wire gave acceptable yields of tin

  11. Radiation levels and countermeasure research on radiological protection in tin mine in china

    Yang Fengfang; Yuan Yongling

    2010-01-01

    Objective: To study the distribution of radiation level in our nation's tin mine, therefore comes up with proposals on radiological protection and provide scientific evidence on how to protect lives and health of worker underground in tin mine. Methods: To get the radiation level of the underground workplaces in tin mine by analysis of research papers and the measuring results from on-scene investigations. Results: Majority of the absorbed dose rates of γ radiation in the air of underground workplaces in tin mine falls within the range of radiation levels of normal background. Earlier, the typical values of radon concentration and potential alpha energy concentration of radon daughters in the air of underground workplaces in tin mine are 3.12 kBq/m 3 and 5.61 μJ/m 3 respectively. Now, radon concentration and potential alpha energy concentration of radon daughters in the air of underground workplaces in majority of tin mine are lower than 1000 Bq/m 3 and 3.57 μJ/m 3 . Conclusion: For these tin mine workers with an average of annual effective dose greater than 1 mSv or these of their specific activity for natural uranium in materials are greater than 1 Bq/g need to have regulation of radiological protection. The control limits for the radon concentration and the potential alpha energy concentration of radon daughters and the absorbed dose rates of γ radiation in the air of underground workplaces in tin mine are 1000 Bq/m3, 3.57 μJ/m 3 and 1 μGy/h respectively. The administrative individual dose for workers working under the ground of tin mine is 10 mSv/a. If a worker's total annual effective dose is greater than 10 mSv, he/she should be considered as radioactive worker. (authors)

  12. Cadmium Manganese Telluride (Cd1-xMnxTe): A potential material for room-temperature radiation detectors

    Hossain, A.; Cui, Y.; Bolotnikov, A.; Camarda, G.; Yang, G.; Kim, K-H.; Gul, R.; Xu, L.; Li, L.; Mycielski, A.; and James, R.B.

    2010-07-11

    Cadmium Manganese Telluride (CdMnTe) recently emerged as a promising material for room-temperature X- and gamma-ray detectors. It offers several potential advantages over CdZnTe. Among them is its optimal tunable band gap ranging from 1.7-2.2 eV, and its relatively low (< 50%) content of Mn compared to that of Zn in CdZnTe that assures this favorable band-gap range. Another important asset is the segregation coefficient of Mn in CdTe that is approximately unity compared to 1.35 for Zn in CdZnTe, so ensuring the homogenous distribution of Mn throughout the ingot; hence, a large-volume stoichiometric yield is attained. However, some materials issues primarily related to the growth process impede the production of large, defect-free single crystals. The high bond-ionicity of CdMnTe entails a higher propensity to crystallize into a hexagonal structure rather than to adopt the expected zinc-blend structure, which is likely to generate twins in the crystals. In addition, bulk defects generate in the as-grown crystals due to the dearth of high-purity Mn, which yields a low-resistivity material. In this presentation, we report on our observations of such material defects in current CdMnTe materials, and our evaluation of its potential as an alternative detector material to the well-known CdZnTe detectors. We characterized the bulk defects of several indium- and vanadium-doped Cd1-xMnxTe crystals by using several advanced techniques, viz., micro-scale mapping, white-beam x-ray diffraction/reflection topography, and chemical etching. Thereafter, we fabricated some detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results indicate that CdMnTe materials could well prove to become a viable alternative in the near future.

  13. Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics

    Tuteja, Mohit

    Cadmium Telluride (CdTe), a chalcogenide semiconductor, is currently used as the absorber layer in one of the highest efficiency thin film solar cell technologies. Current efficiency records are over 22%. In 2011, CdTe solar cells accounted for 8% of all solar cells installed. This is because, in part, CdTe has a low degradation rate, high optical absorption coefficient, and high tolerance to intrinsic defects. Solar cells based on polycrystalline CdTe exhibit a higher short-circuit current, fill factor, and power conversion efficiency than their single crystal counterparts. This is despite the fact that polycrystalline CdTe devices exhibit lower open-circuit voltages. This is contrary to the observation for silicon and III-V semiconductors, where material defects cause a dramatic drop in device performance. For example, grain boundaries in covalently-bonded semiconductors (a) act as carrier recombination centers, and (b) lead to localized energy states, causing carrier trapping. Despite significant research to date, the mechanism responsible for the superior current collection properties of polycrystalline CdTe solar cells has not been conclusively answered. This dissertation focuses on the macro-scale electronic band structure, and micro scale electronic properties of grains and grain boundaries in device-grade CdTe thin films to answer this open question. My research utilized a variety of experimental techniques. Samples were obtained from leading groups fabricating the material and devices. A CdCl 2 anneal is commonly performed as part of this fabrication and its effects were also investigated. Photoluminescence (PL) spectroscopy was employed to study the band structure and defect states in CdTe polycrystals. Cadmium vacancy- and chlorine-related states lead to carrier recombination, as in CdTe films grown by other methods. Comparing polycrystalline and single crystal CdTe, showed that the key to explaining the improved performance of polycrystalline CdTe does

  14. Design study of a high-resolution breast-dedicated PET system built from cadmium zinc telluride detectors

    Peng Hao; Levin, Craig S

    2010-01-01

    We studied the performance of a dual-panel positron emission tomography (PET) camera dedicated to breast cancer imaging using Monte Carlo simulation. The proposed system consists of two 4 cm thick 12 x 15 cm 2 area cadmium zinc telluride (CZT) panels with adjustable separation, which can be put in close proximity to the breast and/or axillary nodes. Unique characteristics distinguishing the proposed system from previous efforts in breast-dedicated PET instrumentation are the deployment of CZT detectors with superior spatial and energy resolution, using a cross-strip electrode readout scheme to enable 3D positioning of individual photon interaction coordinates in the CZT, which includes directly measured photon depth-of-interaction (DOI), and arranging the detector slabs edge-on with respect to incoming 511 keV photons for high photon sensitivity. The simulation results show that the proposed CZT dual-panel PET system is able to achieve superior performance in terms of photon sensitivity, noise equivalent count rate, spatial resolution and lesion visualization. The proposed system is expected to achieve ∼32% photon sensitivity for a point source at the center and a 4 cm panel separation. For a simplified breast phantom adjacent to heart and torso compartments, the peak noise equivalent count (NEC) rate is predicted to be ∼94.2 kcts s -1 (breast volume: 720 cm 3 and activity concentration: 3.7 kBq cm -3 ) for a ∼10% energy window around 511 keV and ∼8 ns coincidence time window. The system achieves 1 mm intrinsic spatial resolution anywhere between the two panels with a 4 cm panel separation if the detectors have DOI resolution less than 2 mm. For a 3 mm DOI resolution, the system exhibits excellent sphere resolution uniformity (σ rms /mean) ≤ 10%) across a 4 cm width FOV. Simulation results indicate that the system exhibits superior hot sphere visualization and is expected to visualize 2 mm diameter spheres with a 5:1 activity concentration ratio within

  15. Diaroyl Tellurides: Synthesis, Structure and NBO Analysis of (2-MeOC6H4CO2Te – Comparison with Its Sulfur and Selenium Isologues. The First Observation of [MgBr][R(C=TeO] Salts

    Fumio Ando

    2009-07-01

    Full Text Available A series of aromatic diacyl tellurides were prepared in moderate to good yields by the reactions of sodium orpotassium arenecarbotelluroates with acyl chlorides in acetonitrile. X-ray structure analyses and theoretical calculations of 2-methoxybenzoic anhydride and bis(2-methoxybenzoyl sulfide, selenide and telluride were carried out. The two 2-MeOC6H4CO moieties of bis(2-methoxybenzoyl telluride are nearly planar and the two methoxy oxygen atoms intramolecularly coordinate to the central tellurium atom from both side of C(11-Te(11-C(22 plane. In contrast, the oxygen and sulfur isologues (2-MeOC6H4CO2E (E = O, S, show that one of the two methoxy oxygen atoms contacts with the oxygen atom of the carbonyl group connected to the same benzene ring. The structure of di(2-methoxybenzoyl selenide which was obtained by MO calculation resembles that of tellurium isologues rather than the corresponding oxygen and sulfur isologues. The reactions of di(aroyl tellurides with Grignard reagents lead to the formation of tellurocarboxylato magnesium complexes [MgBr][R(C=TeO].

  16. A facile way to control phase of tin selenide flakes by chemical vapor deposition

    Wang, Zhigang; Pang, Fei

    2018-06-01

    Although two-dimensional (2D) tin selenides are attracting intense attentions, studies on its phase transition are still relatively few. Here we report a facile way to control the phase growth of tin selenide flakes on mica and SiO2/Si by only adjusting nominal Sn:Se ratio, which refers to the amount of loaded SnO2 and Se precursors. High normal Sn:Se ratio induced SnSe flakes, conversely SnSe2 flakes formed. It could be used as a practical guide to selectively synthesize pure phase of single crystalline 2D layered chalcogenide materials similar to tin selenides.

  17. Effect of pulsed voltage on electrochemical migration of tin in electronics

    Verdingovas, Vadimas; Jellesen, Morten Stendahl; Ambat, Rajan

    2015-01-01

    formation and increases the charge transferred between the electrodes over time. With increase of duty cycle, increases the anodic dissolution of tin, which was visualized using a tin ion indicator applied on the components prior to applying the voltage. The anodic dissolution of tin significantly...... respectively at 10 and 5 V, while the duty cycle and the pulse width were varied in the range of ms. The results showed that varying of pulse width at fixed duty cycle has a minor effect under investigated conditions, whereas increasing duty cycle significantly reduces the time to short due to dendrite...

  18. Recovery Of Valuable Metals In Tin-Based Anodic Slimes By Carbothermic Reaction

    Han Chulwoong; Kim Young-Min; Son Seong Ho; Choi Hanshin; Kim Tae Bum; Kim Yong Hwan

    2015-01-01

    This study investigated the recovery of anodic slimes by carbothermic reaction in the temperature range of 973~1,273K and amount of carbon as a function of time. Tin anodic slime samples were collected from the bottom of the electrolytic cells during the electro-refining of tin. The anodic slimes are consisted of high concentrated tin, silver, copper and lead oxides. The kinetics of reduction were determined by means of the weight-loss measurement technique. In order to understand in detail o...

  19. Separation of substandard tin ores by x-ray fluorescence method

    Kotler, N.I.; Konovalov, V.M.; Kamenskij, Yu.V.; Neverov, A.D.; Ogorodnikov, Yu.V.

    1987-01-01

    Analysis of pure tin ores on X-ray fluorescence separation (XFS) is carried out. The volumes of lump sampling are substantiated; several variants of technical and economical efficiency of XFS application have been calculated. It is shown that at XFS of -400+25 mm classes conditional as to tin content intermediate product with high efficiency factor may be prepared. Separation of -25+10 mm class is unsuitable, as it doesn't allow to increase tin content to conditional, and the process efficiency is low

  20. Modification of structure and properties of tin – fullerite films irradiated by boron ions

    Baran, L.V.

    2013-01-01

    By methods of raster electronic, atomic force and electronic force microscopy and X-ray diffraction the research of change of structure, phase composition and local electronic properties of the tin - fullerite films, subjected to implantation by B + ions (E = 80 keV, F = 5×10 17 ions/cm 2 ) are submitted. It is established, that as a result of boron ion implantation of two-layered tin - fullerite films, tin and fullerite interfusion on sues, that is the solid-phase interaction and as a result of which forms the heterophase with heterogeneous local electric properties. (authors)

  1. Synthesis and electrochemical properties of tin oxide-based composite by rheological technique

    He Zeqiang; Li Xinhai; Xiong Lizhi; Wu Xianming; Xiao Zhuobing; Ma Mingyou

    2005-01-01

    Novel rheological technique was developed to synthesize tin oxide-based composites. The microstructure, morphology, and electrochemical performance of the materials were investigated by X-ray diffraction, scanning electron microscopy and electrochemical methods. The particles of tin oxide-based materials form an inactive matrix. The average size of the particles is about 150 nm. The material delivers a charge capacity of more than 570 mAh g -1 . The capacity loss per cycle is about 0.15% after being cycled 30 times. The good electrochemical performance indicates that this kind of tin oxide-based material is promising anode for lithium-ion battery

  2. Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

    Kulkarni, S.; Bayard, M.

    1991-01-01

    High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

  3. Synthesis and shape control of copper tin sulphide nanocrystals and formation of gold-copper tin sulphide hybrid nanostructures

    Kruszynska, Marta; Parisi, Juergen; Kolny-Olesiak, Joanna [Oldenburg Univ. (Germany). Inst. of Physics, Energy and Semiconductor Research Lab.

    2014-08-15

    Hexagonal prismatic Cu{sub 3}SnS{sub 4} nanoparticles and nanorods were synthesized by a hot-injection procedure. Changing the reaction conditions leads to the formation of different shapes. When oleylamine is used as a solvent, hexagonal prismatic particles are obtained, while a reaction in octadecene results in the formation of nanorods. The growth process of copper tin sulphide starts with the formation of djurleite copper sulphide seeds. Their reaction with Sn{sup 4+} ions leads to the formation of Cu{sub 3}SnS{sub 4}. These Cu{sub 3}SnS{sub 4} nanocrystals form Au-Cu{sub 3}SnS{sub 4} hybrid nanostructures by reaction with gold seeds.

  4. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    Wang, Wei; Li, Lingzi; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-06-14

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge{sub 0.83}Sn{sub 0.17}-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge{sub 0.83}Sn{sub 0.17}) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge{sub 0.83}Sn{sub 0.17} during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge{sub 0.83}Sn{sub 0.17} layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal 〈100〉 azimuths are formed. The formation of the Sn wires is related to the annealing temperature and the Ge{sub 0.83}Sn{sub 0.17} thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (E{sub c}) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to “cellular precipitation.” This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.

  5. Surface characterization of sol–gel derived indium tin oxide films on ...

    Unknown

    , India ... 1. Introduction. Indium tin oxide (ITO) coating on glass is an important item in the field ..... In addition, contamination of carbon from environment cannot be ruled ..... processing of ceramics, glasses and composites (eds) L L. Hench and ...

  6. THE INFLUENCE OF NANOSECOND ELECTROMAGNETIC PULSES TO OBTAIN TIN AND THE PROPERTIES OF ITS ALLOYS

    V. G. Komkov

    2012-01-01

    Full Text Available Experimentally found that the effect of nanosecond electromagnetic pulses to melt the charge, while the carbon thermal recovery of the tin ore, accelerates the formation of the metallic phase.

  7. Formation of Ti-N graded bioceramic layer by DC hollow-cathode plasma nitriding

    ZHENG Chuan-lin

    2004-01-01

    Ti-N graded ceramic layer was formed on titanium by using DC hollow-cathode plasma nitriding technique. The structure of Ti-N layer was analyzed using X-ray diffractometry(XRD) with Cu Kα radiation, and the microhardness( HV0.1) was measured from the surface to inner along the cross section of Ti-N layer. The results indicate that the Ti-N graded layer is composed of ε-Ti2 N, δ-TiN and α-Ti(N) phases. Mechanism discussion shows that hollow-cathode discharge can intensify gas ionization, increase current density and enhance the nitriding potential, which directly increases the thickness of the diffusion coatings compared with traditional nitriding methods.

  8. Tribological characterization of TiN coatings prepared by magnetron sputtering

    Makwana, Nishant S.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Chauhan, Dharmesh B.; Dave, Divyeshkumar P.; Rawal, Sushant K.

    2018-05-01

    Titanium nitride (TiN) coating deposited on aluminium and brass pin substrates using RF reactive magnetron sputtering. The structural properties and surface morphology were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). There was formation of (101) Ti2N, (110) TiN2 and (102) TiN0.30 peaks at 3.5Pa, 2Pa and 1.25Pa sputtering pressure respectively. The tribological properties of coating were inspected using pin on disc tribometer equipment. It was observed that TiN coated aluminium and brass pins demonstrated improved wear resistance than uncoated aluminium and brass pins.

  9. Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?

    Hussain, Aftab M.

    2012-01-01

    growth in device performance. To overcome this problem, novel channel materials are being developed to enhance carrier mobility and hence increase device performance. This work explores a novel semiconducting alloy - Silicon-tin (SiSn) as a channel

  10. Filtrates & Residues: Experimental Work with Tin (II) Chloride in a High School.

    Sanchez, Manuela Martin

    1988-01-01

    Presents a high school chemistry lab experiment using tin (II) chloride to explore the concepts of hydrolysis, Le Chatelier's principle, and electrolysis. Presents methodology and the chemistry involved. Offers questions for the students. (MVL)

  11. Separation of methyltin species from inorganic tin, and their interactions with humates in natural waters

    Omar, M.; Bowen, H.J.M.

    1982-01-01

    Tin(II) and tin(IV) are absorbed from aqueous solutions by Sephadex G-25 gel, from which they can be eluted by humates or fulvates, with which they interact more strongly. Methyltin species are not absorbed by Sephadex G-25, and so can be separated from inorganic tin. Both inorganic tin and methyltin species in natural waters at pH 7.4 can be quantitatively retained by passing through small columns of Chelex-100 resin: the methyltin species can then be washed off the resin with 4M nitric acid. Trimethyltin chloride 113 Sn in water scarcely interacts with fulvates, humates, kaolinite or montmorillonite but is absorbed by Sphagnum peat. Dimethyltin dichloride- 113 Sn reacts significantly with all the above materials after 2 hours equilibration. Methyltin trichloride- 113 Sn interacts weakly in alkaline solutions. (author)

  12. PCBs with immersion tin finish - some experiences with lead-free reflow process

    Bukat, K.; Koziol, G.; Sitek, J.; Borecki, J.; Hackiewicz, H. [Tele and Radio Research Inst., Warsaw (Poland); Merkle, H.; Schroeder, S. [Ormecon Chemie GmbH and Co. KG, Ammersbek (Germany); Girulska, A.; Gardela, K. [Eldos Sp. z o.o., Wroclaw (Poland)

    2004-07-01

    Substitution of lead-free solders in electronic assemblies requires changes in the conventional SnPb finishes of PCBs. The Craft project ''PRINT'' objectives respond to this challenge. Its main goal is to develop and implement the new technology of high solderability immersion tin for printed circuit boards at small and medium enterprises. The subject of the research was organic based immersion tin coating which would fulfil demands of SMT. In the paper the results of reflow soldering process on PCBs covered by Ormecon registered immersion tin finish with using lead-free solder pastes will be described. Solderability of tin coating as well as wettability of lead-free solder paste will be presented. (orig.)

  13. Preparation of tin -heparin complex to be applied for myocardial infarct diagnosis

    Badi, J. M.; Al-Azzawi, H. A.; Resen, H. M.; Abed, I. G.; Owiad, H.; Manji, A. N.

    2012-12-01

    Tin-heparin complex has been prepared (liquid form) to be labeled with technetium-99 can be applied for diagnosis of myocardial infarcts vascular diseases and deep vein thrombosis. The preparation contents are 0.1mg tin chloride dehydrate and 1250 1.U of heparin. The results of the pH effect on the labeling yield indicated that high percentage of labeling yield (96.1%) was obtained in the optimal pH (5.50). The obtained results showed that the quantity of reducing agent (tin chloride dehydrate) and chelating agent (heparin) has no effect on the labeling yield. Results of radio analytical studies by paper chromatography technique wear confirmed by data obtained by Gel chromatography column scanning techniques. These techniques showed the high labeling yield of the tin-heparin complex. The persistence of high labeling yield for 8 hours is a good indication for its stability and efficiency for radio diagnosis examination in nuclear medicine centers. (Author)

  14. Amphibolites in the Rare Metal- and Tin-bearing Bastar – Malkangiri ...

    33

    21-10-284/1, Begumpet, Brahmanwadi Lane no. ... Odisha states of India, is well known for primary and secondary commercial deposits of tin .... carried out using the rapid wet chemical methods, essentially after Shapiro and Brannock. (1955).

  15. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

    Shintri, Shashidhar S.

    Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

  16. The C-terminal extension unique to the long isoform of the shelterin component TIN2 enhances its interaction with TRF2 in a phosphorylation- and dyskeratosis congenita-cluster-dependent fashion.

    Nelson, Nya D; Dodson, Lois M; Escudero, Laura; Sukumar, Ann T; Williams, Christopher L; Mihalek, Ivana; Baldan, Alessandro; Baird, Duncan M; Bertuch, Alison A

    2018-03-26

    TIN2 is central to the shelterin complex, linking the telomeric proteins TRF1 and TRF2 with TPP1/POT1. Mutations in TINF2 , which encodes TIN2, that are found in dyskeratosis congenita (DC) result in very short telomeres and cluster in a region shared by the two TIN2 isoforms, TIN2S (short) and TIN2L (long). Here we show that TIN2L, but not TIN2S, is phosphorylated. TRF2 interacts more with TIN2L than TIN2S, and both the DC-cluster and phosphorylation promote this enhanced interaction. The binding of TIN2L, but not TIN2S, is affected by TRF2-F120, which is also required for TRF2's interaction with end processing factors such as Apollo. Conversely, TRF1 interacts more with TIN2S than with TIN2L. A DC-associated mutation further reduces TIN2L-TRF1, but not TIN2S-TRF1, interaction. Cells overexpressing TIN2L or phosphomimetic-TIN2L are permissive to telomere elongation, whereas cells overexpressing TIN2S or phosphodead-TIN2L are not. Telomere lengths are unchanged in cell lines in which TIN2L expression has been eliminated by CRISPR/Cas9-mediated mutation. These results indicate that TIN2 isoforms are biochemically and functionally distinguishable, and that shelterin composition could be fundamentally altered in patients with TINF2 mutations. Copyright © 2018 Nelson et al.

  17. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    Feng, Tom; Ghosh, Amal K.

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  18. Determination of tin, chromium, cadmium and lead in canned fruits from the Czech market

    Pavel Diviš

    2017-01-01

    Full Text Available The global production of metal cans is more than 300 billion cans. Benefits of metal packaging consist mainly from the great strenght, excellent barrier properties and good thermal conductivity. The main problem of used metal packaging are the corrosion processes. The corrosion of metal container causes dissolution of tin which is used as a protective layer of the steel shell of the can and other metallic elements used in the manufacture of cans. In this work 31 samples of canned fruit was analysed and the concentration of tin, chromium, cadmium and lead was determined in fruit and in syrup using ICP-OES and ICP-MS techniques. The results showed no difference between the concentration of analysed elements in fruit and in syrup. In none of the analyzed samples the permitted maximum concentration of tin 200 mg.kg-1 was exceeded. Maximum concentration of tin was measured in canned grepfruit (59.8 ±1.9 mg.kg-1. The age of cans had no significant effect on the concentration of tin in canned fruit. The concentration of tin in fruit packaged in cans with protective layer of lacquer was significantly lower than the concentration of tin in fruit packaged in cans without protective layer of lacquer. Concentration of chromium, cadmium and lead in the analysed samples was very low at the natural levels of occurrence of these metals in fruit and it was impossible to determine unequivocally that the measured concentrations of these metals in canned fruit originate from the corrosion of can. The corrosion of the tinplate was studied using scanning electron microscopy with an energy dispersive spectrometer. By analyzing the SEM pictures and EDS spectra, critical areas of tin plate corrosion were observed. Based on the measured results it can be concluded that the consumption of fresh canned fruit is not a major problem for the inhabitants of the Czech Republic in terms of intake of potentially hazardous metals.

  19. Preparation of 99mTc- Tin colloid: a freeze-dried kit for liver imaging

    Hamada, E.S.; Muramoto, E.; Barbosa, M.R.F. de; Colturato, M.T.; Herrerias, R.

    1988-07-01

    99m Tc-tin-colloid was formulated as a useful agent for liver imaging. The radiochemical purity and stability of the labeled colloid were determined by paper chromatography and 85% methanol solvent, the labelling efficiency was > 95%. The comparative studies of the biological distribution of 99m Tc-tin-colloid and 99 Tc-Sulphur-colloid were made with Wistar rats. The results of organ distribution were similar in both products; > 90% liver uptake. (author) [pt

  20. Hydrothermal treatment for TiN as abrasion resistant dental implant coating and its fibroblast response

    Shi, Xingling; Xu, Lingli; Munar, Melvin L.; Ishikawa, Kunio

    2015-01-01

    Dental implant made of pure titanium (Ti) is prone to scratch and abrasion during routine oral hygiene procedures. This results an increase in surface roughness and therefore, facilitates the adhesion of bacteria. In severe cases, this could lead to peri-implantitis. To overcome this problem, surface modification of Ti is necessary to improve its abrasion resistance. Besides, a strong implant–gingiva interface should also be guaranteed to prevent the adhesion of bacteria. In this study, titanium nitride (TiN) coating was first prepared with gas nitriding to increase surface hardness of pure the substrate. Then, the TiN was hydrothermally treated in CaCl 2 solution in order to improve its soft tissue biocompatibility. The effect of hydrothermal treatment temperature on surface properties of TiN was investigated and its biocompatibility was assessed in vitro using NIH3T3 fibroblast cell. It was determined that 120 °C was the critical temperature for the hydrothermal treatment condition. Treatment below 120 °C could incorporate Ca into TiN surface, oxidize TiN surface partially and then improve the wettability while preserving its morphology and hardness. Fibroblast cell attachment and proliferation were improved and cell spreading was enhanced on hydrothermally treated specimens compared with untreated ones. Improved wettability, Ca incorporation and negative surface due to interstitial N were believed to be the main reasons. Hydrothermal treatment is expected to make TiN a promising dental implant coating with excellent abrasion resistance and good soft tissue affinity. - Highlights: • Ca was incorporated into TiN surface while not sacrificing its hardness. • Interstitial N due to oxidation promoted Ca adsorption and cell adhesion. • Hydrothermal treatment makes TiN a promising coating for dental implant

  1. RF measurements of a traveling-wave muffin-tin accelerating structure at 90 GHz

    Chou, P.J.; Bowden, G.B.; Copeland, M.R.; Menegat, A.; Pritzkau, D.P.; Siemann, R.H.

    1997-05-01

    A measuring system at the table-top scale was developed for RF measurements of a muffin-tin accelerating structure operating at 32 times the SLAC frequency (2.856 GHz). Both perturbation and non-perturbation methods are employed to characterize the RF properties of a muffin-tin structure. Conventional bead pull measurements are extended to millimeter wavelengths. Design of the measuring system and preliminary results of RF measurements are presented

  2. Hydrothermal treatment for TiN as abrasion resistant dental implant coating and its fibroblast response

    Shi, Xingling, E-mail: shixingling1985@hotmail.com [School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Department of Biomaterials, Faculty of Dental Science, Kyushu University, Fukuoka 812-8582 (Japan); Jiangsu Provincial Key Laboratory for Interventional Medical Devices, Huaiyin Institute of Technology, Huaian 223003 (China); Xu, Lingli [School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Munar, Melvin L.; Ishikawa, Kunio [Department of Biomaterials, Faculty of Dental Science, Kyushu University, Fukuoka 812-8582 (Japan)

    2015-04-01

    Dental implant made of pure titanium (Ti) is prone to scratch and abrasion during routine oral hygiene procedures. This results an increase in surface roughness and therefore, facilitates the adhesion of bacteria. In severe cases, this could lead to peri-implantitis. To overcome this problem, surface modification of Ti is necessary to improve its abrasion resistance. Besides, a strong implant–gingiva interface should also be guaranteed to prevent the adhesion of bacteria. In this study, titanium nitride (TiN) coating was first prepared with gas nitriding to increase surface hardness of pure the substrate. Then, the TiN was hydrothermally treated in CaCl{sub 2} solution in order to improve its soft tissue biocompatibility. The effect of hydrothermal treatment temperature on surface properties of TiN was investigated and its biocompatibility was assessed in vitro using NIH3T3 fibroblast cell. It was determined that 120 °C was the critical temperature for the hydrothermal treatment condition. Treatment below 120 °C could incorporate Ca into TiN surface, oxidize TiN surface partially and then improve the wettability while preserving its morphology and hardness. Fibroblast cell attachment and proliferation were improved and cell spreading was enhanced on hydrothermally treated specimens compared with untreated ones. Improved wettability, Ca incorporation and negative surface due to interstitial N were believed to be the main reasons. Hydrothermal treatment is expected to make TiN a promising dental implant coating with excellent abrasion resistance and good soft tissue affinity. - Highlights: • Ca was incorporated into TiN surface while not sacrificing its hardness. • Interstitial N due to oxidation promoted Ca adsorption and cell adhesion. • Hydrothermal treatment makes TiN a promising coating for dental implant.

  3. Elaboration and test of the method of separation of alkaline metals ions with tin phosphate

    Smirnov, G.I.; Chernyak, A.S.; Kostromina, O.N.; Kachur, N.Ya.; Shpeyzer, B.G.

    1986-01-01

    Present work is devoted to elaboration and test of the method of separation of alkaline metals ions with tin phosphate. Thus, the isotherms of sorption of lithium, sodium, potassium, rubidium and cesium ions with amorphous tin phosphate depending on their concentration, ph of solution, sorbent quantity are obtained. The parameters of extraction of potassium microquantities from sodium salts are defined. Ultra pure sodium chloride, sodium iodide, sodium sulphate, sodium nitrate, sodium nitrite, sodium phosphate are synthesized.

  4. Restoration of Soil Physical and Chemical Properties of Abandoned Tin- Mining in Bangka Belitung Islands

    Ishak Yuarsah; Etik Puji Handayani; Rakhmiati; Yatmin

    2017-01-01

    The practices of tin mining that remove all soil layers on top of the mineral deposit layers have caused serious environmental problems, i.e. degradation of soil physical and chemical properties and disappearance of vegetation, flora and fauna in ecosystems, which further can change the local microclimate. The tailing area of tin mining have unstable soil structure and low organic matter content, so it is vulnerable to land slides and erosion. The characteristics of the soils in the tailing a...

  5. Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3

    Kim, Hyo Kyeom; Kim, Ju Youn; Park, Jin Yong; Kim, Yang Do; Kim, Young Do; Jeon, Hyeong Tag; Kim, Won Mok

    2002-01-01

    TiN films were deposited by using the metalorganic atomic layer deposition (MOALD) method using tetrakis-dimethyl-amino-titanium (TDMAT) as the titanium precursor and ammonia (NH 3 ) as the reactant gas. Two saturated TiN film growth regions were observed in the temperature ranges from 175 and 190 .deg. C and from 200 and 210 .deg. C. TiN films deposited by the MOALD technique showed relatively lower carbon content than films deposited by metalorganic chemical vapor deposition (MOCVD) method. TiN films deposited at around 200 .deg. C under standard conditions showed the resistivity values as low as 500 μΩ-cm, which is about one order lower than the values for TiN films deposited by MOCVD using TDMAT or TDMAT with NH 3 . Also, the carbon incorporation and the resistivity were further decreased with increasing Ar purge time and flow rate. TiN films deposited at temperature below 300 .deg. C showed amorphous characteristics. TiN film deposited on contact holes, about 0.4-μm wide and 0.8-μm deep, by using the MOALD method showed excellent conformal deposition with almost 100% step coverage. This study demonstrates that the processing parameters need to be carefully controlled to optimize the film properties that the processing parameters need to be carefully controlled to optimize the film properties when using the ALD technique and that TiN films deposited by using the MOALD method exhibited excellent film properties compared to those of films deposited by using other CVD methods

  6. Computing LS factor by runoff paths on TIN

    Kavka, Petr; Krasa, Josef; Bek, Stanislav

    2013-04-01

    The article shows results of topographic factor (the LS factor in USLE) derivation enhancement focused on detailed Airborne Laser Scanning (ALS) based DEMs. It describes a flow paths generation technique using triangulated irregular network (TIN) for terrain morphology description, which is not yet established in soil loss computations. This technique was compared with other procedures of flow direction and flow paths generation based on commonly used raster model (DEM). These overland flow characteristics together with therefrom derived flow accumulation are significant inputs for many scientific models. Particularly they are used in all USLE-based soil erosion models, from which USLE2D, RUSLE3D, Watem/Sedem or USPED can be named as the most acknowledged. Flow routing characteristics are also essential parameters in physically based hydrological and soil erosion models like HEC-HMS, Wepp, Erosion3D, LISEM, SMODERP, etc. Mentioned models are based on regular raster grids, where the identification of runoff direction is problematic. The most common method is Steepest descent (one directional flow), which corresponds well with the concentration of surface runoff into concentrated flow. The Steepest descent algorithm for the flow routing doesn't provide satisfying results, it often creates parallel and narrow flow lines while not respecting real morphological conditions. To overcome this problem, other methods (such as Flux Decomposition, Multiple flow, Deterministic Infinity algorithm etc.) separate the outflow into several components. This approach leads to unrealistic diffusion propagation of the runoff and makes it impossible to be used for simulation of dominant morphological features, such as artificial rills, hedges, sediment traps etc. The modern methods of mapping ground elevations, especially ALS, provide very detailed models even for large river basins, including morphological details. New algorithms for derivation a runoff direction have been developed as

  7. Antimony Doped Tin Oxides and Their Composites with Tin pyrophosphates as Catalyst Supports for Oxygen Evolution Reaction in Proton Exchange Membrane Water Electrolysis

    Xu, Junyuan; Li, Qingfeng; Christensen, Erik

    2012-01-01

    Proton exchange membrane water electrolysers operating at typically 80 °C or at further elevated temperatures suffer from insufficient catalyst activity and durability. In this work, antimony doped tin oxide nanoparticles were synthesized and further doped with an inorganic proton conducting phase...... based on tin pyrophosphates as the catalyst support. The materials showed an overall conductivity of 0.57 S cm−1 at 130 °C under the water vapor atmosphere with a contribution of the proton conduction. Using this composite support, iridium oxide nanoparticle catalysts were prepared and characterized...

  8. Corrosion Behavior of Carbon Steel in Concrete Material Composed of Tin Slag Waste in Aqueous Chloride Solution

    Rustandi, Andi; Cahyadi, Agung; Taruli Siallagan, Sonia; Wafa' Nawawi, Fuad; Pratesa, Yudha

    2018-01-01

    Tin slag is a byproduct of tin ore smelting process which is rarely utilized. The main purpose of this work is to investigate the use of tin slag for concrete cement material application compared to the industrial Ordinary Portland Cement (OPC). Tin slag composition was characterized by XRD and XRF analysis. The characterization results showed the similar chemical composition of tin slag and OPC. It also revealed the semi crystalline structure of tin slag sample. Several electrochemical tests were performed to evaluate corrosion behavior of tin slag, OPC and various mixed composition of both materials and the addition of CaO. The corrosion behavior of OPC and tin slag were evaluated by using Cyclic Polarization, Electrochemical Impedance Spectroscopy (EIS) and Electrochemical Frequency Modulation (EFM) methods. Aqueous sodium chloride (NaCl) solution with 3.5% w.t concentration which similar to seawater was used as the electrolyte in this work. The steel specimen used as the reinforce bar (rebar) material of the concrete was carbon steel AISI 1045. The rebar was embedded in the concrete cement which composed of OPC and the various composition of tin slag including slag without addition of CaO and slag mixed with addition of 50 % CaO. The electrochemical tests results revealed that tin slag affected its corrosion behavior which becoming more active and increasing the corrosion rate as well as decreasing the electrochemical impedance.

  9. Organic derivatives of tin (II/IV): Investigation of their structure

    Szirtes, L., E-mail: szirtes@iki.kfki.h [Institute of Isotopes of the Hungarian Academy of Sciences, Budapest H-1525, P.O. Box 77 (Hungary); Megyeri, J., E-mail: megyeri@iki.kfki.h [Institute of Isotopes of the Hungarian Academy of Sciences, Budapest H-1525, P.O. Box 77 (Hungary); Kuzmann, E. [Laboratory of Nuclear Chemistry, CRC of the Hungarian Academy of Science at Eoetvoes University, H-1518 Budapest, P.O. Box 32 (Hungary); Beck, A. [Institute of Isotopes of the Hungarian Academy of Sciences, Budapest H-1525, P.O. Box 77 (Hungary)

    2011-07-15

    The structures of tin(II)-oxalate, tin(IV)Na-EDTA and tin(IV)Na{sub 8}-inositol hexaphosphate were investigated using XRD analysis. Samples were identified using the Moessbauer study, thermal analysis and FTIR spectrometry. The Moessbauer study determined two different oxidation states of tin atoms, and consequently two different tin surroundings in the end products. The tin oxalate was found to be orthorhombic with space group Pnma, a=9.2066(3) A, b=9.7590(1) A, c=13.1848(5) A, V=1184.62 A{sup 3} and Z=8. SnNa-EDTA was found to be monoclinic with space group P2{sub 1}/c{sub 1}, a=10.7544(3) A, b=10.1455(3) A, c=16.5130(6) A, {beta}=98.59(2){sup o}, V=1781.50(4) A{sup 3} and Z=4. Sn(C{sub 6}H{sub 6}Na{sub 8}O{sub 24}P{sub 6}) was found to be amorphous.

  10. Stability of tinned food from pigs radiated with various doses of ionizing rays

    Kossakowska, A.; Kossakowski, S.; Widenska, T.; Wojton, B.

    1978-01-01

    The examinations were carried out on 347 tinned food made of meat from pigs exposed to radiation of 300 and 600 R. The animals were irradiated with 60 Co. The pigs irradiated with 300 R were slaughtered after 7 and 14 days, and these with 600 R after 7 and 12 days; the control animals were killed after 14 days. Post-slaughter visual and microbiological examinations were performed by seeding the samples of the blood, muscles, lymphnodes and internal organs for the presence of Salmonella sp. Meat was pickled and heated up to 67-68 0 C (in the center of tinned food). The lowest stability showed the tinned food made of pigs irradiated with 600 R and killed after 12 days. Chemical examinations of the tinned food stored at 6 0 C revealed the prevalence of oxydative processes in fat over hydrolitic ones. The difference in acid number between tinned food under test and controls appeared after 6 months. Peroxides occurred in the control after 6 months and in these under examination after 3 months, and the level was 4.00-5.80 apart from the tins made of meat of pigs irradiated with 300 R and slaughtered after 7 days. (author)

  11. Isotope Dilution - Thermal Ionisation Mass Spectrometric Analysis for Tin in a Fly Ash Material

    Hernandez, C.; Fernandez, M.; Quejido, A. L.

    2006-01-01

    Isotope dilution-thermal ionisation mass spectrometry (ID-TIMS) analysis has been applied to the determination of tin in a fly ash sample supplied by the EC Joint Research Centre (Ispra, Italy). The proposed procedure includes the silica gel/phosphoric acid technique for tin thermal ionisation activation and a strict heating protocol for isotope ratio measurements. Instrumental mass discrimination factor has been previously determined measuring a natural tin standard solution. Spike solutions has been prepared from 112Sn-enriched metal and quantified by reverse isotope dilution analysis. Two sample aliquots were spiked and tin was extracted with 4,5 M HCI during 25 min ultrasound esposure time. Due to the complex matrix of this fly ash material, a two-steps purification stage using ion-exchange chromatography was required prior TIMS analysis. Obtained results for the two sample-spike blends (10,10 + - 0,55 y 10,50 + - 0,64 imolg-1) are comprarable, both value and uncertainty. Also a good reproducibility is observed between measurements. The proposed ID-TIMS procedure, as a primary method and due to the lack of fly ash reference material certified for tin content, can be used to validate more routine methodologies applied to tin determination in this kind of materials. (Author) 75 refs

  12. Hierarchical TiN nanoparticles-assembled nanopillars for flexible supercapacitors with high volumetric capacitance.

    Qin, Ping; Li, Xingxing; Gao, Biao; Fu, Jijiang; Xia, Lu; Zhang, Xuming; Huo, Kaifu; Shen, Wenli; Chu, Paul K

    2018-05-10

    Titanium nitride (TiN) is an attractive electrode material in fast charging/discharging supercapacitors because of its excellent conductivity. However, the low capacitance and mechanical brittleness of TiN restricts its further application in flexible supercapacitors with high energy density. Thus, it is still a challenge to rationally design TiN electrodes with both high electrochemical and mechanical properties. Herein, the hierarchical TiN nanoparticles-assembled nanopillars (H-TiN NPs) array as binder free electrodes were obtained by nitriding of hierarchical titanium dioxide (TiO2) nanopillars, which was produced by a simple hydrothermal treatment of anodic TiO2 nanotubes (NTs) array in water. The porous TiN nanoparticles connected to each other to form ordered nanopillar arrays, effectively providing larger specific surface area and more active sites for charge storage. The H-TiN NPs delivered a high volumetric capacitance of 120 F cm-3 at 0.83 A cm-3, which is better than that of TiN NTs arrays (69 F cm-3 at 0.83 A cm-3). After assembling into all-solid-state devices, the H-TiN NPs based supercapacitors exhibited outstanding volumetric capacitance of 5.9 F cm-3 at 0.02 A cm-3 and a high energy density of 0.53 mW h cm-3. Our results reveal a new strategy to optimize the supercapacitive performance of metal nitrides.

  13. Inductively coupled plasma atomic emission spectrometric determination of tin in canned food.

    Sumitani, H; Suekane, S; Nakatani, A; Tatsuka, K

    1993-01-01

    Various canned foods were digested sequentially with HNO3 and HCl, diluted to 100 mL, and filtered, and then tin was determined by inductively coupled plasma atomic emission spectrometry (ICP/AES). Samples of canned Satsuma mandarin, peach, apricot, pineapple, apple juice, mushroom, asparagus, evaporated milk, short-necked clam, spinach, whole tomato, meat, and salmon were evaluated. Sample preparations did not require time-consuming dilutions, because ICP/AES has wide dynamic range. The standard addition method was used to determine tin concentration. Accuracy of the method was tested by analyzing analytical standards containing tin at 2 levels (50 and 250 micrograms/g). The amounts of tin found for the 50 and 250 micrograms/g levels were 50.5 and 256 micrograms/g, respectively, and the repeatability coefficients of variation were 4.0 and 3.8%, respectively. Recovery of tin from 13 canned foods spiked at 2 levels (50 and 250 micrograms/g) ranged from 93.9 to 109.4%, with a mean of 99.2%. The quantitation limit for tin standard solution was about 0.5 microgram/g.

  14. Wear of tin coating and Al-Si alloy substrate against carburized steel under mixed lubrication

    Wang, Q.; Cheng, H. S.; Fine, M. E.

    1994-04-01

    Tin coatings on Al-Si alloys are widely used in the automotive industries. The soft tin coating and the harder substrate alloy form a tribological system with the advantages of low friction and reasonably high load-bearing capacity. Wear tests of tin coated Al-Si Z332 alloy in conformal contact against carburized 1016 steel have been carried out under mixed lubrications with SAE 10W30 oil to study the wear mechanisms. Two major wear mechanisms, uniform wear of the tin coating due to micro-plowing and spall pitting related to the substrate are found to contribute to the bearing material loss when the fluid lubrication film is relatively thick (Lambda about 1.6). Under conditions of thinner films (Lambda approximately = 0.8), some local coating debonding occurs. The pitting and local coating debounding are closely related to fracture in the substrate. The bonding between silicon and tin seems to be weaker than between aluminum and tin. During wear, oxidation occurs.

  15. Study on the removal of iron impurities in methanesulfonic acid tin plating bath

    Hou-li, LIU; Jian-Jun, CHEN; Hong-Liang, PAN

    2018-03-01

    This thesis investigated the the influence of sodium sulfite as reducing agent on the recovery rate of tin ion. The approach is that HZ016 type cation exchange resin was used to adsorb Sn2+ and Fe2+ in electroplated tin solution first. After adsorption, the resin was removed by sulfuric acid, which was added with NaOH to adjust pH value to form precipitation and separate tin. X-ray diffraction (XRD) and energy spectrum (EDS) method were used to analyze the composition of the precipitates adjusted by pH. The results show that when the mass ratio of resin to bath is 1:2, the adsorption efficiency of resin reaches 98.3% and 97.1% respectively, and the elution efficiency of tin and iron reaches 95.1% and 94% respectively when the mass ratio of resin to eluent sulfuric acid is 1:4. Sodium sulfite was added to increase the efficiency of tin recovery by 8.1%. EDS and XRD atlas showed that after pH regulation, the main composition of the filtration precipitation was the hydroxides of tin.

  16. Studies on tin based inorganic ion exchangers for fission products separation

    Dash, A.; Balasubramanian, K.R.; Murthy, T.S.

    1993-01-01

    Tin(IV) antimonate and hydrous tin(IV) oxide have been prepared and their characteristics are evaluated. A new method has been finalized for the separation of 95 Zr- 95 Nb from irradiated uranium using hydrous tin(IV) oxide. In this process, the irradiated sample is dissolved in concentrated HNO 3 , evaporated to near dryness and taken up in 0.5 M HNO 3 . The solution is passed over tin(IV) oxide column and the isotope eluted with 10 M HNO 3 . The product is obtained in pure nitrate form which is generally preferred for different applications. A method has been finalized for the separation of 106 Ru from fission product solution using tin(IV) antimonate. In this method fission product solution is adjusted to 2 M with respect to nitric acid, 137 Cs is separated on a column of ammonium phosphomolybdate, the effluent after adjustment of acidity to 0.2 M is then passed over a column of tin(IV) antimonate where the effluent contains pure 106 Ru. (author). 14 refs., 6 figs., 2 tabs

  17. Multi - pulse tea CO2 laser beam interaction with the TiN thin films

    Gakovic, B.; Trtica, M.; Nenadovic, T.; Pavlicevic, B.

    1998-01-01

    The interaction of various types of energetic beams including a laser beam with the high-hardness coatings is of great fundamental and technological interest. The Nd:YAG, excimer and CO 2 are frequently used laser beams for this purpose. The interaction of a laser beam with low thickness coatings, deposited on austenitic stainless steel, is insufficiently known in the literature. Titanium nitride (TiN) possess the excellent physico-chemical characteristics. For this reason TiN films/coatings are widely used. The purpose of this article is a consideration of the effect of TEA C0 2 laser radiation on the TiN film deposited on austenitic stainless steel substrate (AISI 316). Investigation of TiN morphological changes, after multipulse laser irradiation, shown dependence on laser fluence, number of laser pulses and the laser pulse shape. Subsequently fast heating and cooling during multi-pulse laser bombardment cause the grain growth of TiN layer. Both laser pulses (pulses with tail and tail-free pulses) produced periodical wave like structure on polished substrate material. Periodicity is observed also on AISI 316 protected with TiN layer, but only with laser pulse with tail. (author)

  18. Newer approach of using alternatives to (Indium doped) metal electrodes, dyes and electrolytes in dye sensitized solar cell

    Patni, Neha; Sharma, Pranjal; Pillai, Shibu G.

    2018-04-01

    This work demonstrates the PV study of dye sensitised solar cells by fabricating the (PV) cell using the ITO, FTO and AZO glass substrate. Dyes used for the fabrication were extracted from beetroot and spinach and a cocktail dye by mixing both of the dyes was also prepared. Similarly the three dufferent electrolytes used were iodide-triiodide couple, polyaniline and mixture of polyaniline and iodide couple. Mixed dye and mixed electrolyte has emerged as the highest efficient cell. The electrical characterisation shows that the highest power conversion efficiency of 1.86% was achieved by FTO substrate, followed by efficiency of 1.83% by AZO substrate and efficiency of 1.63% with ITO substrate using mixed dye and mixed electrolyte approach. This justifies that FTO and AZO shows better efficiency and hence proposed to be used as an alternative to indium free system.

  19. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    Ravichandran, K., E-mail: kkr1365@yahoo.com [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Senthamilselvi, V. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Department of Physics, Kunthavai Naachiyaar Government College for Women (Autonomous), Thanjavur-613 007, Tamil Nadu (India)

    2013-04-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  20. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    Ravichandran, K.; Senthamilselvi, V.

    2013-01-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  1. Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

    Xue Zhang

    2017-07-01

    Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

  2. Optimization of Electrochemical Performance of LiFePO4/C by Indium Doping and High Temperature Annealing

    Ajay Kumar

    2017-10-01

    Full Text Available We have prepared nano-structured In-doped (1 mol % LiFePO4/C samples by sol–gel method followed by a selective high temperature (600 and 700 °C annealing in a reducing environment of flowing Ar/H2 atmosphere. The crystal structure, particle size, morphology, and magnetic properties of nano-composites were characterized by X-ray diffraction (XRD, scanning electron microsopy (SEM, transmission electron microscopy (TEM, and 57Fe Mössbauer spectroscopy. The Rietveld refinement of XRD patterns of the nano-composites were indexed to the olivine crystal structure of LiFePO4 with space group Pnma, showing minor impurities of Fe2P and Li3PO4 due to decomposition of LiFePO4. We found that the doping of In in LiFePO4/C nanocomposites affects the amount of decomposed products, when compared to the un-doped ones treated under similar conditions. An optimum amount of Fe2P present in the In-doped samples enhances the electronic conductivity to achieve a much improved electrochemical performance. The galvanostatic charge/discharge curves show a significant improvement in the electrochemical performance of 700 °C annealed In-doped-LiFePO4/C sample with a discharge capacity of 142 mAh·g−1 at 1 C rate, better rate capability (~128 mAh·g−1 at 10 C rate, ~75% of the theoretical capacity and excellent cyclic stability (96% retention after 250 cycles compared to other samples. This enhancement in electrochemical performance is consistent with the results of our electrochemical impedance spectroscopy measurements showing decreased charge-transfer resistance and high exchange current density.

  3. and Cadmium Zinc Telluride

    Bheema

    INTRODUCTION. Semiconductor nanoparticles or Quantum Dots (QDs), in particular II-VI materials, have ... the study of structural, electronic transport and optical properties of Zn doped CdTe thin films, ...... Bhattacharya, S.K & Anjali, K. 2007.

  4. Nanolithography on mercury telluride

    Muehlbauer, Mathias Josef

    2015-01-01

    Topological insulators belong to a new quantum state of matter that is currently one of the most recognized research fields in condensed matter physics. Strained bulk HgTe and HgTe/HgCdTe quantum well structures are currently one of few topological insulator material systems suitable to be studied in transport experiments. In addition HgTe quantum wells provide excellent requirements for the conduction of spintronic experiments. A fundamental requirement for most experiments, however, is to reliably pattern these heterostructures into advanced nano-devices. Nano-lithography on this material system proves to be challenging because of inherent temperature limitations, its high reactivity with various metals and due to its properties as a topological insulator. The current work gives an insight into why many established semiconductor lithography processes cannot be easily transferred to HgTe while providing alternative solutions. The presented developments include novel ohmic contacts, the prevention of metal sidewalls and redeposition fences in combination with low temperature (80 C) lithography and an adapted hardmask lithography process utilizing a sacrificial layer. In addition we demonstrate high resolution low energy (2.5 kV) electron beam lithography and present an alternative airbridge gating technique. The feasibility of nano-structures on HgTe quantum wells is exemplarily verified in two separate transport experiments. We are first to realize physically etched quantum point contacts in HgTe/HgCdTe high mobility 2DEGs and to prove their controllability via external top-gate electrodes. So far quantum point contacts have not been reported in TI materials. However, these constrictions are part of many proposals to probe the nature of the helical quantum spin Hall edge channels and are suggested as injector and detector devices for spin polarized currents. To confirm their functionality we performed four-terminal measurements of the point contact conductance as a function of external gate voltage. Our measurements clearly exhibit quantized conductance steps in 2e"2/h, which is a fundamental characteristic of quantum point contacts. Furthermore we conducted measurements on the formation and control of collimated electron beams, a key feature to realize an all electrical spin-optic device. In a second study several of the newly developed lithography techniques were implemented to produce arrays of nano-wires on inverted and non-inverted HgTe quantum well samples. These devices were used in order to probe and compare the weak antilocalization (WAL) in these structures as a function of magnetic field and temperature. Our measurements reveal that the WAL is almost an order of magnitude larger in inverted samples. This observation is attributed to the Dirac-like dispersion of the energy bands in HgTe quantum wells. The described lithography has already been successfully implemented and adapted in several published studies. All processes have been optimized to guarantee a minimum effect on the heterostructure's properties and the sample surface, which is especially important for probing the topological surface states of strained HgTe bulk layers. Our developments therefore serve as a base for continuous progress to further establish HgTe as a topological insulator and give access to new experiments.

  5. Structure data of elements and intermetallic phases. SubVol. B. Sulfides, selenides, tellurides. Pt. 1. Ag-Al-Cd-S. Cu-Te-Yb

    Hellwege, K H; Hellwege, A M [eds.; Eisenmann, B; Schaefer, H

    1986-01-01

    Volume III/14 'Structure data of elements and intermetallic phases' is a supplement to and extension of Volume III/6. Since the publication of III/6 in 1971 (considering original papers up to 1967), the amount of new information for these substances has increased rapidly. Therefore the data had to be divided into several parts. The first part, III/14b1, is presented herewith. In Volume III/6, simple sulfides, selenides and tellurides were treated together with the intermetallic phases. The data are compiled in the same way as in III/6: for each substance the space group, lattice constants, their dependence on temperature and pressure, and other information is listed in the tables. In several cases, mostly for solid solutions, diagrams are given which are added in a separate chapter. Original papers containing a complete structure analysis are referred to in the tables. (orig./GSCH).

  6. Pre-chemotherapy values for left and right ventricular volumes and ejection fraction by gated tomographic radionuclide angiography using a cadmium-zinc-telluride detector gamma camera

    Haarmark, Christian; Haase, Christine; Jensen, Maria Maj

    2016-01-01

    age and both left and right ventricular volumes in women (r = -0.4, P right end systolic ventricular volume in men (r = -0.3, P = .001). CONCLUSION: A set of reference values for cardiac evaluation prior to chemotherapy in cancer patients without other known cardiopulmonary......BACKGROUND: Estimation of left ventricular ejection fraction (LVEF) using equilibrium radionuclide angiography is an established method for assessment of left ventricular function. The purpose of this study was to establish normative data on left and right ventricular volumes and ejection fraction......, using cadmium-zinc-telluride SPECT camera. METHODS AND RESULTS: From routine assessments of left ventricular function in 1172 patients, we included 463 subjects (194 men and 269 women) without diabetes, previous potentially cardiotoxic chemotherapy, known cardiovascular or pulmonary disease. The lower...

  7. Thermochemical properties of silver tellurides including empressite (AgTe) and phase diagrams for Ag-Te and Ag-Te-O

    Voronin, Mikhail V.; Osadchii, Evgeniy G.; Brichkina, Ekaterina A.

    2017-10-01

    This study compiles original experimental and literature data on the thermodynamic properties (ΔfG°, S°, ΔfH°) of silver tellurides (α-Ag2Te, β-Ag2Te, Ag1.9Te, Ag5Te3, AgTe) obtained by the method of solid-state galvanic cell with the RbAg4I5 and AgI solid electrolytes. The thermodynamic data for empressite (AgTe, pure fraction from Empress Josephine Mine, Colorado USA) have been obtained for the first time by the electrochemical experiment with the virtual reaction Ag + Te = AgTe. The Ag-Te phase diagrams in the T - x and log fTe2 (gas) - 1/ T coordinates have been refined, and the ternary Ag-Te-O diagrams with Ag-Te-TeO2 (paratellurite) composition range have been calculated.

  8. Molecular precursors for the phase-change material germanium-antimony-telluride, Ge{sub 2}Sb{sub 2}Te{sub 5} (GST)

    Harmgarth, Nicole; Zoerner, Florian; Engelhardt, Felix; Edelmann, Frank T. [Chemisches Institut, Otto-von-Guericke-Universitaet Magdeburg (Germany); Liebing, Phil [Laboratorium fuer Anorganische Chemie, ETH Zuerich (Switzerland); Burte, Edmund P.; Silinskas, Mindaugas [Institut fuer Mikro- und Sensorsysteme, Otto-von-Guericke-Universitaet Magdeburg (Germany)

    2017-10-04

    This review provides an overview of the precursor chemistry that has been developed around the phase-change material germanium-antimony-telluride, Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Thin films of GST can be deposited by employing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques. In both cases, the success of the layer deposition crucially depends on the proper choice of suitable molecular precursors. Previously reported processes mainly relied on simple alkoxides, alkyls, amides and halides of germanium, antimony, and tellurium. More sophisticated precursor design provided a number of promising new aziridinides and guanidinates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Formation and acceleration of uniformly filled ellipsoidal electron bunches obtained via space-charge-driven expansion from a cesium-telluride photocathode

    P. Piot

    2013-01-01

    Full Text Available We report the experimental generation, acceleration, and characterization of a uniformly filled electron bunch obtained via space-charge-driven expansion (often referred to as “blow-out regime” in an L-band (1.3-GHz radiofrequency photoinjector. The beam is photoemitted from a cesium-telluride semiconductor photocathode using a short (<200  fs ultraviolet laser pulse. The produced electron bunches are characterized with conventional diagnostics and the signatures of their ellipsoidal character are observed. We especially demonstrate the production of ellipsoidal bunches with charges up to ∼0.5  nC corresponding to a ∼20-fold increase compared to previous experiments with metallic photocathodes.

  10. Polycrystalline Mn-alloyed indium tin oxide films

    Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

    2008-01-01

    Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

  11. Surface energy for electroluminescent polymers and indium-tin-oxide

    Zhong Zhiyou; Yin Sheng; Liu Chen; Zhong Youxin; Zhang Wuxing; Shi Dufang; Wang Chang'an

    2003-01-01

    The contact angles on the thin films of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and indium-tin-oxide (ITO) were measured by the sessile-drop technique. The surface energies of the films were calculated using the Owens-Wendt (OW) and van Oss-Chaudhury-Good (vOCG) approaches. The overall total surface energies of MEH-PPV and the as-received ITO were 30.75 and 30.07 mJ/m 2 , respectively. Both approaches yielded almost the same surface energies. The surface energies were mainly contributed from the dispersion interactions or Lifshitz-van der Waals (LW) interactions for both MEH-PPV and ITO. The changes in the contact angles and surface energies of the ITO films, due to different solvent cleaning processes and oxygen plasma treatments, were analyzed. Experimental results revealed that the total surface energy of the ITO films increased after various cleaning processes. In comparison with different solvents used in this study, we found that methanol is an effective solvent for ITO cleaning, as a higher surface energy was observed. ITO films treated with oxygen plasma showed the highest surface energy. This work demonstrated that contact angle measurement is a useful method to diagnose the cleaning effect on ITO films

  12. Extreme ultraviolet patterning of tin-oxo cages

    Haitjema, Jarich; Zhang, Yu; Vockenhuber, Michaela; Kazazis, Dimitrios; Ekinci, Yasin; Brouwer, Albert M.

    2017-07-01

    We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These cage molecules were already known to function as a negative tone photoresist for EUV radiation, but in this work, we significantly optimized their performance. Our results show that sensitivity and resolution are only meaningful photoresist parameters if the process conditions are optimized. We focus on contrast curves of the materials using large area EUV exposures and patterning of the cages using EUV interference lithography. It is shown that baking steps, such as postexposure baking, can significantly affect both the sensitivity and contrast in the open-frame experiments as well as the patterning experiments. A layer thickness increase reduced the necessary dose to induce a solubility change but decreased the patterning quality. The patterning experiments were affected by minor changes in processing conditions such as an increased rinsing time. In addition, we show that the anions of the cage can influence the sensitivity and quality of the patterning, probably through their effect on physical properties of the materials.

  13. Manufacturing of glass from tin mining tailings in Bolivia

    Arancibia, J. r. H.; Alfonso, P.; Garcia-Valles, M.; Martinez, S.; Parcerisa, D.; Canet, C.; Romero, F. M.

    2013-01-01

    Tailings from mining activities in Bolivia represent an environmental problem. In the vicinity of the tin mines of Llallagua, Potosi department, there are large dumps and tailings. We present a study of the use of these wastes as raw materials for the manufacture of glass. This procedure aims to contribute to environmental remediation of mining areas through the vitrification, a process which offers an alternative for stabilization of hazardous waste. In addition, the marketing of the obtained product would provide an additional income to the mining areas. For this study three samples of mining waste, with grain size between sand and silt, were used. The chemical composition of these raw materials, determined by X-ray fluorescence, is granitic, with high contents of heavy metals. On the basis of its composition, glass were made from silica glass by adding CaCO 3 and Na 2 CO 3 . The thermal cycle has been determined from TDA. Tg values of glass range from 626 degree centigrade to 709 degree centigrade. Leaching tests of the obtained glasses confirm their capacity to retain heavy metals. (Author)

  14. Indoor guided evacuation: TIN for graph generation and crowd evacuation

    Mengchao Xu

    2016-05-01

    Full Text Available This paper presents two complementary methods: an approach to compute a network data-set for indoor space of a building by using its two-dimensional (2D floor plans and limited semantic information, combined with an optimal crowd evacuation method. The approach includes three steps: (1 generate critical points in the space, (2 connect neighbour points to build up the network, and then (3 run the optimal algorithm for optimal crowd evacuation from a room to the exit gates of the building. Triangulated Irregular Network (TIN is used in the first two steps. The optimal evacuation crowd is not based on the nearest evacuation gate for a person but relies on optimal sorting of the waiting lists at each gate of the room to be evacuated. As an example case, a rectangular room with 52 persons with two gates is evacuated in 102 elementary interval times (one interval corresponds to the time for one step for normal velocity walking, whereas it would have been evacuated in not less than 167 elementary steps. The procedure for generating the customized network involves the use of 2D floor plans of a building and some common Geographic Information System (GIS functions. This method combined with the optimal sorting lists will be helpful for guiding crowd evacuation during any emergency.

  15. Scintigraphic study of gastric emptying with colloidal tin

    Rodríguez Paleo, Lester; Nuez Vilar, Maricela; Machado Lois, Marisel; López González, María Karla; Torres Leyva, Oscar; Izquierdo Izquierdo, Yimel; García González, Idelsy; Conesa Gonzalez, Ana Ibis

    2016-01-01

    Gastroparesis is defined as a delay in gastric emptying in the absence of mechanical obstruction, associated with symptoms such as nausea and / or vomiting, feeling of postprandial gastric fullness, early satiety or epigastric pain for more than 3 months. The gold standard in the diagnosis of delayed gastric emptying scintigraphy is gastric emptying and radiopharmaceutical has been used more 99m Tc-sulfur colloid not available in the country. In order to evaluate the usefulness of colloidal tin in the scintigraphic gastric emptying study, a descriptive study was conducted in 64 patients over 18 years using as radiopharmaceutical 99m Tc-Sn colloid. 31% of patients had symptoms. The emptying time was normal in 50 cases and the association of gastroparesis symptoms was observed in 20 (15 diabetic and 5 non-diabetic), 9 patients had a delayed emptying, but reported no symptoms. Gastroparesis was more frequent in women than in men (35% versus 21%). 21% of patients had a moderate delayed gastric emptying. Conclusions: The results obtained with 99m Tc-Sn colloid are comparable to those reported by other authors using 99m Tc-SC in the scintigraphic assessment of gastric emptying. (author)

  16. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  17. Samarium (III Selective Membrane Sensor Based on Tin (IV Boratophosphate

    Ashok S. K. Kumar

    2004-08-01

    Full Text Available Abstract: A number of Sm (III selective membranes of varying compositions using tin (IV boratophosphate as electroactive material were prepared. Polyvinyl chloride, polystyrene and epoxy resin were used as binding materials. Membrane having composition of 40% exchanger and 60% epoxy resin exhibited best performance. This membrane worked well over a wide concentration range of 1x10-5M to 1x10-1 M of samarium ions with a Super-Nernstian slope of 40 mV/decade. It has a fast response time of less than 10 seconds and can be used for at least six months without any considerable divergence in potentials. The proposed sensor revealed good selectivities with respect to alkali, alkaline earth, some transition and rare earth metal ions and can be used in the pH range of 4.0-10.0. It was used as an indicator electrode in the potentiometric titration of Sm (III ions against EDTA. Effect of internal solution was studied and the electrode was successfully used in non-aqueous media, too.

  18. Synthesis and magnetic properties of tin spinel ferrites doped manganese

    El Moussaoui, H.; Mahfoud, T.; Habouti, S.; El Maalam, K.; Ben Ali, M.; Hamedoun, M.; Mounkachi, O.; Masrour, R.; Hlil, E. K.; Benyoussef, A.

    2016-05-01

    In this work we report the synthesis, the microstructural characterization and the magnetic properties of tin spinel ferrites doped manganese (Sn1-xMnxFe2O4 with x=0.25, 0.5, 0.75, and 1) nanoparticles prepared by co-precipitation method. The effect of annealing temperature on the structure, morphology and magnetic properties of Sn0.5Mn0.5Fe2O4 has been investigated. The synthesized nanoparticle sizes have been controlled between 4 and 9 nm, with uniform spherical morphology as confirmed by transmission electron microscopy (TEM). All the samples prepared possess single domain magnetic. The nanoparticles of Sn0.5Mn0.5Fe2O4 with 4 nm in diameter have a blocking temperature close to 100 K. In addition, the cation distribution obtained from the X-ray diffraction of this sample was confirmed by magnetic measurement. For the Sn1-xMnxFe2O4; (0≤x≤1) samples, the magnetization and coercive fields increase when the augmentation of Mn content increases. For x=0.5, such parameters decrease when the calcination temperature increases.

  19. Highly efficient and durable TiN nanofiber electrocatalyst supports.

    Kim, Hyun; Cho, Min Kyung; Kwon, Jeong An; Jeong, Yeon Hun; Lee, Kyung Jin; Kim, Na Young; Kim, Min Jung; Yoo, Sung Jong; Jang, Jong Hyun; Kim, Hyoung-Juhn; Nam, Suk Woo; Lim, Dong-Hee; Cho, EunAe; Lee, Kwan-Young; Kim, Jin Young

    2015-11-28

    To date, carbon-based materials including various carbon nanostructured materials have been extensively used as an electrocatalyst support for proton exchange membrane fuel cell (PEMFC) applications due to their practical nature. However, carbon dissolution or corrosion caused by high electrode potential in the presence of O2 and/or water has been identified as one of the main failure modes for the device operation. Here, we report the first TiN nanofiber (TNF)-based nonwoven structured materials to be constructed via electrospinning and subsequent two-step thermal treatment processes as a support for the PEMFC catalyst. Pt catalyst nanoparticles (NPs) deposited on the TNFs (Pt/TNFs) were electrochemically characterized with respect to oxygen reduction reaction (ORR) activity and durability in an acidic medium. From the electrochemical tests, the TNF-supported Pt catalyst was better and more stable in terms of its catalytic performance compared to a commercially available carbon-supported Pt catalyst. For example, the initial oxygen reduction performance was comparable for both cases, while the Pt/TNF showed much higher durability from an accelerated degradation test (ADT) configuration. It is understood that the improved catalytic roles of TNFs on the supported Pt NPs for ORR are due to the high electrical conductivity arising from the extended connectivity, high inertness to the electrochemical environment and strong catalyst-support interactions.

  20. Contribution to the aluminum-tin-zinc ternary system

    Drápala, J.; Kostiuková, G.; Losertová, M.

    2017-11-01

    The Sn-Zn-Al alloys are one of significant candidates in the proposal of alternative lead-free solders for higher temperature soldering. This paper deals with the study of the aluminum-tin-zinc system. Twenty Sn-Zn-Al alloys together with six binary Sn-Zn alloys were prepared and studied experimentally. Alloys were prepared from pure Sn, Zn and Al (melting and cooling in a vacuum resistance furnace). The specimens were studied metallographically including the micro-hardness measurements, complete chemical analysis (ICP-AES, OES), X-ray micro-analysis of alloys by SEM and EDX in order to determine the composition and identification of individual phases. Significant temperatures and enthalpies of phase transformations were determined by DTA. After long-term annealing of selected alloys in vacuum followed by quenching the structural and chemical microanalyses of the present phases and their limit concentrations were carried out. The achieved results were compared with the thermodynamic modelling of the ternary Sn-Zn-Al system (computer programs THERMOCALC, MTDATA, PANDAT and databases CALPHAD, COST). Electrical resistivity, density, magnetic susceptibility and wettability of Sn-Zn-Al solders were measured as well.

  1. TiN coating on steel by pulsed capillary discharge

    Avaria, G; Favre, M; Bhuyan, H; Wyndham, E; Kelly, H; Grondona, D; Marquez, A

    2006-01-01

    The characteristic geometry of a pulsed capillary discharge (PCD)[1] establishes natural conditions for the formation of plasma jets, which expand in the chamber's neutral gas. A locally stored capacitor, coaxial with the capillary, is pulse charged to a maximum of -10kV, giving a current pulse of ∼10ns, ∼2kA. The discharge is operated in nitrogen, in a continuous pulsing mode, at a frequency of 50 Hz and pressures of 0.3 to 1 Torr. The coating produced by these plasma jets on substrates of AISI 304 stainless steel have been studied. The chamber's anode is made of titanium, which interacts with the nitrogen plasma producing TiN coatings on the substrates. The results are presented for the plasma characterization at different discharge pressures and times, as well as SEM, EDS and AFM analysis of deposits made. This characterization was carried out using Langmuir double probes, which provide data on the electronic temperature and density in the plasma jet. At the same time spectrographic studies of the plasma were carried out, and the presence of ionized atoms of titanium and nitrogen were observed. An inverse relation between the pressure of nitrogen present in the chamber and the thickness of the coating over steel was found, as well as a direct relationship between the temperature and plasma densities with the thickness of the deposit (CW)

  2. Novel phases and superconductivity of tin sulfide compounds

    Gonzalez, Joseph M.; Nguyen-Cong, Kien; Steele, Brad A.; Oleynik, Ivan I.

    2018-05-01

    Tin sulfides, SnxSy, are an important class of materials that are actively investigated as novel photovoltaic and water splitting materials. A first-principles evolutionary crystal structure search is performed with the goal of constructing the complete phase diagram of SnxSy and discovering new phases as well as new compounds of varying stoichiometry at ambient conditions and pressures up to 100 GPa. The ambient phase of SnS2 with P 3 ¯ m 1 symmetry remains stable up to 28 GPa. Another ambient phase, SnS, experiences a series of phase transformations including α-SnS to β-SnS at 9 GPa, followed by β-SnS to γ-SnS at 40 GPa. γ-SnS is a new high-pressure metallic phase with P m 3 ¯ m space group symmetry stable up to 100 GPa, which becomes a superconductor with a maximum Tc = 9.74 K at 40 GPa. Another new metallic compound, Sn3S4 with I 4 ¯ 3 d space group symmetry, is predicted to be stable at pressures above 15 GPa, which also becomes a superconductor with relatively high Tc = 21.9 K at 30 GPa.

  3. Etching of germanium-tin using ammonia peroxide mixture

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  4. Tin Whisker Growth and Mitigation with a Nanocrysytalline Nickel Coating

    Janiuk, Szymon

    Tin whiskers are a problem in the electronics industry since the EU banned the use of lead in Pb-Sn solders as part of the Restriction of Hazardous Substances (RoHS). The biggest concern with Sn whiskers is their ability to short-circuit electronics. High reliability applications such as the aerospace, defense, healthcare, and automotive industries are at most risk. This project explores Sn whisker mitigation and prevention with the use of nanocrystalline nickel coating over Sn surfaces. Sn was plated onto a pure Cu substrate using electroplating. A high temperature and high humidity condition, at 85°C and 85% RH, was effective at growing whiskers. A nNi coating was plated over Sn/Cu coupons. After subjecting the nNi/ Sn/Cu samples through 85°C/85% RH testing conditions, no whiskers were observed penetrating the surface. These results make nNi a viable material to use as a coating to prevent the growth of Sn whiskers in electronic assemblies.

  5. Search for technetium in natural tin metallurgical residues

    Parker, C.W.

    1996-07-01

    Possible instability of baryons inside the nuclei might result in accumulation of rare isotopes in natural ores. In this respect, isotopes of technetium have certain advantages that can be useful in the search for technetium in nonradioactive ores by chemical methods. In this paper, we review the history of technetium research and discuss a new approach to the search for natural technetium associated with tin ores which appears to offer a rare possibility of discovering a smelting operation by-product such as flue dust, in which the volatile technetium heptoxide (Tc{sub 2}O{sub 7}), like rhenium heptoxide (Re{sub 2}O{sub 7}), would be expected to concentrate. Our concept of a search for technetium in these materials would be based on the assumption that traces of rhenium could occur in the ore and could be traced most easily by neutron activation of small samples. Such a procedure would confirm that an enrichment from the ore to the flue dust actually occurs with the rhenium and therefore should occur with technetium. Furthermore, this occurrence should identify the best location to search for technetium.

  6. The acidic properties of mixed tin and antimony oxide catalysts

    Irving, E.A.; Taylor, D.

    1978-01-01

    The acidic properties of mixed tin + antimony oxide catalysts were studied in the isomerization of 3,3-dimethyl-1-butene, cyclopropane, 1-butene, and cis-2-butene and the dehydration of isopropanol over the mixed oxides outgassed at room temperature and 698/sup 0/K. Only the zero-order portions of the reaction were used for calculations. With catalysts outgassed at room temperature, weakly acidic sites were present, and all the reactions probably occurred by a carbonium ion mechanism with Broensted acid sites as a source of protons. The rates increased with increasing antimony content to a maximum at approx. 50 at. % and then decreased with further increase in the antimony content. Outgassing of the catalysts at 698/sup 0/K increased the isomerization rate of 3,3-dimethyl-1-butene, but decreased those for cyclopropane and isopropanol due to poisoning by the propylene produced. For 1-butene and cis-2-butene and catalysts outgassed at 698/sup 0/K, only catalysts with less than 50Vertical Bar3< antimony were active. The catalysts were poisoned by treatment with bases or with sodium acetate. A proposed correlation between rates and acidity led to the conclusion that the catalyst composition corresponding to maximum acidity differs from that for maximum selective oxidation activity. Graphs and 10 references.

  7. 188Re radiopharmaceuticals for radiosynovectomy: evaluation and comparison of tin colloid, hydroxyapatite and tin-ferric hydroxide macroaggregates

    Savio, Eduardo; Ures, María Cristina; Zeledón, Patricia; Trindade, Victoria; Paolino, Andrea; Mockford, Virginia; Malanga, Antonio; Fernández, Marcelo; Gaudiano, Javier

    2004-01-01

    Radiosynovectomy is a therapy used to relieve pain and inflammation from rheumatoid arthritis and related diseases. In this study three 188 Re particulate compounds were characterized according to their physico-chemical properties and their biological behavior in rabbits. The results were compared in order to establish which was the radiopharmaceutical that better fits the requirements of this kind of radiotherapy. Three radiopharmaceutical formulations, tin colloid, hydroxyapatite particles (HA) and ferric hydroxide macroaggregates coated with tin colloid (FHMA), were physically characterized (number, volume and surface of the particles). For this purpose laser diffraction methodology was used. To evaluate cavity leakage of activity the following studies in New Zealand rabbits were performed: scintigraphic images for 48 hr after intraarticular injection of each radiopharmaceutical, biodistribution at 48 hr and urine samples collection during the first 24 hr post-radiopharmaceutical administration. Labeling procedures for 188 Re-HA and 188 Re-Sn-FHMA were labour intensive while 188 Re-Sn was easily prepared. Furthermore, 188 Re-Sn colloid offered the greatest surface area in the 2–10 microm range and was obtained with a radiochemical purity over 95%, while percentage of bound activity for 188 Re-HA and 188 Re-Sn-FHMA were 55% and 92% respectively. Stability was verified for the three radiopharmaceuticals for 24 hr. Scintigraphic studies and biodistribution in rabbits after intraarticular administration of the radiopharmaceuticals showed relevant activity only in the knee, this being over 90% of the residual activity in the whole body at 48 hr in every case. Renal elimination of 188 Re-Sn colloid and 188 Re-Sn-FHMA was detected by activity measurements in urine samples, during the first 12 hr post-radiopharmaceutical injection. The percentage of activity retained in the knee was 69.1% for 188 Re-Sn colloid, 55.1% for 188 Re-Sn-FHMA and 33.6% for 188 Re-HA. The 188

  8. XPS investigations of tribolayers formed on TiN and (Ti,Re)N coatings

    Oktay, Serkan; Kahraman, Zafer; Urgen, Mustafa; Kazmanli, Kursat, E-mail: kursat@itu.edu.tr

    2015-02-15

    Graphical abstract: - Highlights: • The (Ti,Re)N coating (8 ± 1.9 at.% Re) consisted of TiN and ReNx (x > 1.33) phases. • TiO{sub 2} provided low friction coefficient to TiN coating at 150 °C. • Re addition to TiN drastically dropped the friction coefficients to 0.17–0.22. • Re{sub 2}O{sub 7} provided very low friction coefficient to (Ti,Re)N coating. • Re addition to TiN improved the wear behavior. - Abstract: TiN and (Ti,Re)N coatings were deposited on high-speed-steel substrates by a hybrid coating system composed of cathodic arc PVD and magnetron sputtering techniques. In order to keep rhenium content low (8 ± 1.9 at.%) in the coating, magnetron sputtering technique was utilized to evaporate rhenium. The (Ti,Re)N coating consisted of TiN and ReN{sub x} (x > 1.33) phases. The hardness of TiN and (Ti,Re)N were 31 GPa and 29 GPa ( ± 2 GPa), respectively. Tribological behaviors of the samples were tested against Al{sub 2}O{sub 3} balls at 21 °C (RT) and 150 °C (HT) by reciprocating wear technique. The tribolayers were analyzed by XPS technique. Friction coefficients of TiN were 0.56, 0.35 for 21 °C and 150 °C tests, respectively. Rhenium addition to TiN drastically dropped the friction coefficients to 0.22 and 0.17 for RT and HT samples. Rhenium addition also improved the wear resistance of the coating at both test temperatures. For TiN, main oxide component of the tribolayers was Ti{sub 2}O{sub 3} for RT tests and TiO{sub 2} for HT tests. The oxide layer formed on (Ti,Re)N were the mixture of TiO{sub 2}, Ti−O−N, ReO{sub 2} and Re{sub 2}O{sub 7} for both test temperatures. Re{sub 2}O{sub 7} provided very low friction coefficient to (Ti,Re)N. The findings are consistent with the crystal chemistry approach.

  9. Leafy nanostructure PANI for material of supercapacitors

    XI Dong; CHEN Xinman

    2013-01-01

    Nanostructure conducting polyaniline(PANI) has great potential applications in supercapacitor electrode materials.In this paper,we report a template-free approach to synthesize PANI by a galvanostatic current procedure with a three-electrode configuration directly on indium-doped tin-oxide substrates (ITO).The morphology of product was characterized by Hitachi S-4800 field emission scanning electron microscope (FE-SEM).Due to the nanostructure,the specific capacitance of PANI film with the th...

  10. A Paper-Based Electrochromic Array for Visualized Electrochemical Sensing

    Fengling Zhang; Tianyi Cai; Liang Ma; Liyuan Zhan; Hong Liu

    2017-01-01

    We report a battery-powered, paper-based electrochromic array for visualized electrochemical sensing. The paper-based sensing system consists of six parallel electrochemical cells, which are powered by an aluminum-air battery. Each single electrochemical cell uses a Prussian Blue spot electrodeposited on an indium-doped tin oxide thin film as the electrochromic indicator. Each electrochemical cell is preloaded with increasing amounts of analyte. The sample activates the battery for the sensin...

  11. Hydrothermal synthesis of electrode materials pyrochlore tungsten trioxide film

    Guo, Jingdong; Li, Yingjeng James; Stanley Whittingham, M.

    Hydrothermal synthesis methods have been successfully used to prepare new transition-metal oxides for cathodes in electrochemical devices such as lithium batteries and electrochromic windows. The tungsten oxides were the first studied, but the method has been extended to the oxides of molybdenum, vanadium and manganese. Sodium tungsten oxide films with the pyrochlore structure have been prepared on gold/alumina and indium-doped tin oxide substrates. These films reversibly and rapidly intercalate lithium and hydrogen ions.

  12. Tin in canned food: a review and understanding of occurrence and effect.

    Blunden, Steve; Wallace, Tony

    2003-12-01

    Tinplate is light gauge, steel sheet or strip, coated on both sides with commercially pure tin and has been used for well over a hundred years as a robust form of food packaging. Altogether, about 25,000 million food cans are produced and filled in Europe per annum, about 20% of these having plain internal (unlacquered) tin-coated steel bodies. Worldwide, the total for food packaging is approximately 80,000 million cans. Tinplate is also extensively used for the production of beverage cans. Europe produces and fills over 15,000 million tinplate beverage cans per annum all of which are internally lacquered. The use of tinplate for food and beverage packaging, will result in some tin dissolving into the food content, particularly when plain uncoated internal surfaces are used. The Provisional Tolerable Weekly Intake for tin is 14 mg/kg body weight and recommended maximum permissible levels of tin in food are typically 250 mg/kg (200 mg/kg UK) for solid foods and 150 mg/kg for beverages. However, the question arises as to whether evidence exists that such elevated levels of tin in food in any way constitute a risk to human health. This review considers the factors affecting the dissolution of tin, the reported measurements/surveys of actual levels of tin in canned foods and the studies and reports of acute (short term) toxicity relating to the ingestion of elevated levels of tin in food products. Chronic studies are mentioned, but are not covered in detail, since the review is mainly concerned with possible effects from the ingestion of single high doses. From published data, there appears to be a small amount of evidence suggesting that consumption of food or beverages containing tin at concentrations at or below 200 ppm has caused adverse gastrointestinal effects in an unknown but possibly small proportion of those exposed. However, the evidence supporting this assertion is derived from reports of adverse effects which offer data that are limited, incomplete or of

  13. Deposition Rate and Energy Enhancements of TiN Thin-Film in a Magnetized Sheet Plasma Source

    Hamdi Muhyuddin D. Barra; Henry J. Ramos

    2011-01-01

    Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The ...

  14. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor deposition ► Deposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  15. Determination of tin in cassiterite ores by colorimetry of iodometry; Determinacion de Estano en minerales y productos de concentracion

    Rodriguez Hernandez, B

    1972-07-01

    The analytical methods are described far the determination of tin in cassiterite ores. The gallein-colorimetric method is described for determining small amounts of tin, covering the 0,01-0,5 per cent range. The sample is decomposed by heating with ammonium iodide, and tin is analyzed colorimetrically by means of it s complex with gallein. The final measure may be brought about either visually or spectrophotometrically at 525 nm. (Author)

  16. Moessbauer study of the composition and corrosion behaviour of electrodeposited and cast brass containing 1-4 m% tin

    Vertes, A.; Suba, M.; Varsanyi-Lakatos, M.; Czako-Nagy, I.; Pchelnikov, A.P.; Losev, V.V.

    1982-01-01

    Moessbauer measurements on electrodeposited and cast brass containing 1-4 m% tin were carried out using conversion electron detector. It was found that the tin formed phases with copper but not with zinc. The identified phases were β, γ, epsilon and eta and their ratio depended on the tin concentration and on the preparation process of the brass. The corrosion behaviour of the samples was also studied. (author)

  17. Tailoring the structural and optical properties of TiN thin films by Ag ion implantation

    Popović, M., E-mail: majap@vinca.rs; Novaković, M.; Rakočević, Z.; Bibić, N.

    2016-12-15

    Highlights: • Changes in structural and optical properties of TiN films induced by Ag ions. • The formation of Ag metallic clusters inside of TiN layers was observed. • The SPR of Ag particles was confirmed by a broad band in the spectra. • As the Ag ions fluence increases the n also increase and k values decrease. • With increasing ion fluence the TiN film becomes more metallic. - Abstract: Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 10{sup 15} ions/cm{sup 2} to 20 × 10{sup 15} ions/cm{sup 2}. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3–476.9 nm when Ag ion fluence varied from 5 × 10{sup 15} ions/cm{sup 2} to 20 × 10{sup 15} ions/cm{sup 2}. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.

  18. Electrochemical migration of tin in electronics and microstructure of the dendrites

    Minzari, Daniel, E-mail: dmin@mek.dtu.d [Section for Materials and Surface Technology, Department for Mechanical Engineering, Technical University of Denmark (Denmark); Grumsen, Flemming Bjerg; Jellesen, Morten S.; Moller, Per; Ambat, Rajan [Section for Materials and Surface Technology, Department for Mechanical Engineering, Technical University of Denmark (Denmark)

    2011-05-15

    Graphical abstract: The electrochemical migration of tin in electronics forms dendritic structures, consisting of a metallic tin core, which is surrounded by oxide layers having various thickness. Display Omitted Research highlights: Electrochemical migration occurs if two conductors are connected by condensed moisture. Metallic ions are dissolved and grow in a dendritic structure that short circuit the electrodes. The dendrite consists of a metallic tin core with oxide layers of various thickness surrounding. Detailed microstructure of dendrites is investigated using electron microscopy. The dendrite microstructure is heterogeneous along the growth direction. - Abstract: The macro-, micro-, and nano-scale morphology and structure of tin dendrites, formed by electrochemical migration on a surface mount ceramic chip resistor having electrodes consisting of tin with small amounts of Pb ({approx}2 wt.%) was investigated by scanning electron microscopy and transmission electron microscopy including Energy dispersive X-ray spectroscopy and electron diffraction. The tin dendrites were formed under 5 or 12 V potential bias in 10 ppm by weight NaCl electrolyte as a micro-droplet on the resistor during electrochemical migration experiments. The dendrites formed were found to have heterogeneous microstructure along the growth direction, which is attributed to unstable growth conditions inside the micro-volume of electrolyte. Selected area electron diffraction showed that the dendrites are metallic tin having sections of single crystal orientation and lead containing intermetallic particles embedded in the structure. At certain areas, the dendrite structure was found to be surrounded by an oxide crust, which is believed to be due to unstable growth conditions during the dendrite formation. The oxide layer was found to be of nanocrystalline structure, which is expected to be formed by the dehydration of the hydrated oxide originally formed in solution ex-situ in ambient air.

  19. Developing an Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers. Part 2

    Courey, Karim J.; Asfour, Shihab S.; Onar, Arzu; Bayliss, Jon A.; Ludwig, Larry L.; Wright, Maria C.

    2009-01-01

    To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

  20. SIGNUM: A Matlab, TIN-based landscape evolution model

    Refice, A.; Giachetta, E.; Capolongo, D.

    2012-08-01

    Several numerical landscape evolution models (LEMs) have been developed to date, and many are available as open source codes. Most are written in efficient programming languages such as Fortran or C, but often require additional code efforts to plug in to more user-friendly data analysis and/or visualization tools to ease interpretation and scientific insight. In this paper, we present an effort to port a common core of accepted physical principles governing landscape evolution directly into a high-level language and data analysis environment such as Matlab. SIGNUM (acronym for Simple Integrated Geomorphological Numerical Model) is an independent and self-contained Matlab, TIN-based landscape evolution model, built to simulate topography development at various space and time scales. SIGNUM is presently capable of simulating hillslope processes such as linear and nonlinear diffusion, fluvial incision into bedrock, spatially varying surface uplift which can be used to simulate changes in base level, thrust and faulting, as well as effects of climate changes. Although based on accepted and well-known processes and algorithms in its present version, it is built with a modular structure, which allows to easily modify and upgrade the simulated physical processes to suite virtually any user needs. The code is conceived as an open-source project, and is thus an ideal tool for both research and didactic purposes, thanks to the high-level nature of the Matlab environment and its popularity among the scientific community. In this paper the simulation code is presented together with some simple examples of surface evolution, and guidelines for development of new modules and algorithms are proposed.

  1. Inorganic tin and organotin interactions with candida maltosa

    White, J.S.; Tobin, J.M. [School of Biotechnology, Dublin City Univ., Dublin (Ireland)

    2004-07-01

    As a consequence of the widespread industrial and agricultural applications of organotins, contamination of various ecosystems has occurred in recent decades. Understanding how these compounds interact with microorganisms is important in assessing the risks of organotin pollution. The organotins, tributyltin (TBT), trimethyltin (TMT) and inorganic tin, Sn(IV), were investigated for their physical interactions with non-metabolising cells and protoplasts of the yeast candida maltosa, an organism that is often associated with contaminated environments. Uptake, toxicity and membrane-acting effects of these compounds, at concentrations approximating those found in polluted environments, were assessed. Sn(IV) and TBT uptake occurred by different mechanisms. Uptake of Sn(IV) was 2-fold greater in intact cells than protoplasts, underlining the importance of cell wall binding, whereas TBT uptake levels by both cell types were similar. TBT uptake resulted in cell death and extensive K{sup +} leakage, while Sn(IV) uptake had no effect. TMT did not interact with cells. Of the three compounds, TBT alone altered membrane fluidity, as measured by the fluorescence anisotropy of 1,6-diphenyl-1,3,5-hexatriene incorporated into cells. Anisotropy of 1-(4-trimethylaminophenyl-6-phenyl-1,3,5-hexatriene) was not affected, implying that TBT is not confined to the surface of the cytoplasmic membrane, but acts within membrane lipids. These results indicate that the cell wall is the dominant site of Sn(IV) interactions with yeast, while lipophilic interactions play an important role in uptake and toxicity of TBT. (orig.)

  2. Synthesis and magnetic properties of tin spinel ferrites doped manganese

    El Moussaoui, H., E-mail: elmoussaoui.hassan@gmail.com [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Mahfoud, T.; Habouti, S. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); El Maalam, K.; Ben Ali, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Laboratoire of Magnetism and the Physics of the high Energies, URAC 12, Departement of physique, B.P. 1014, Faculty of science, Mohammed V University, Rabat (Morocco); Hamedoun, M.; Mounkachi, O. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Masrour, R. [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Route Sidi Bouzid – BP 63, 46000 Safi (Morocco); Hlil, E.K. [Institut Néel, CNRS-UJF, B.P. 166, 38042 Grenoble Cedex (France); Benyoussef, A. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Laboratoire of Magnetism and the Physics of the high Energies, URAC 12, Departement of physique, B.P. 1014, Faculty of science, Mohammed V University, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco)

    2016-05-01

    In this work we report the synthesis, the microstructural characterization and the magnetic properties of tin spinel ferrites doped manganese (Sn{sub 1−x}Mn{sub x}Fe{sub 2}O{sub 4} with x=0.25, 0.5, 0.75, and 1) nanoparticles prepared by co-precipitation method. The effect of annealing temperature on the structure, morphology and magnetic properties of Sn{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4} has been investigated. The synthesized nanoparticle sizes have been controlled between 4 and 9 nm, with uniform spherical morphology as confirmed by transmission electron microscopy (TEM). All the samples prepared possess single domain magnetic. The nanoparticles of Sn{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4} with 4 nm in diameter have a blocking temperature close to 100 K. In addition, the cation distribution obtained from the X-ray diffraction of this sample was confirmed by magnetic measurement. For the Sn{sub 1−x}Mn{sub x}Fe{sub 2}O{sub 4}; (0≤x≤1) samples, the magnetization and coercive fields increase when the augmentation of Mn content increases. For x=0.5, such parameters decrease when the calcination temperature increases. - Highlights: • We have studied the microstructural and the magnetic properties of Sn{sub 1-x}MnxFe{sub 2}O{sub 4}. • The nanoparticles of Sn{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4} have a blocking temperature around 100 K. • The Ms and Hc increase with the augmentation of Mn content.

  3. Tin dioxide nanostructured thin films obtained through polymeric precursor method

    Marcelo Antônio Dal Santos

    2012-11-01

    Full Text Available Tin dioxide (SnO2 nanostructured thin films with low proportion of defects and low roughness were produced through the systematic control of temperature and viscosity of the precursor solutions used for thin films deposition. These solutions were obtained through the citrate method and the films were deposited through the ‘dip-coating’ technique on glass substrate and after thermal treatment at 470ºC/4h, they were characterized both structurally and morphologically through the X-ray diffractometry, optic microscopy, scanning electronic microscopy, atomic force microscopy, X-ray fluorescence, UV-Vis absorption spectroscopy and X-ray excited photoelectrons spectroscopy. The film thickness was obtained through scanning electronic microscopy of the films cross-section and correlated to the proportion of Sn and Si obtained through X-ray fluorescence. X-ray diffractometry of the films revealed the presence of peaks corresponding to the SnO2 crystalline phase, overlapping a wide peak between 20 and 30º (2?, characteristic of the glass substrate. Optic microscopy, Scanning electronic microscopy and atomic force microscopy revealed homogeneous films, with low roughness, suitable to several applications such as sensors and transparent electrodes. It could be observed through the UV-Vis absorption analysis that the films presented high optical transparency and ‘band gap’ energy 4.36 eV. The X-ray excited photoelectron spectroscopy confirmed the presence of SnO2, as well as traces of the elements present in the glass substrate and residual carbon from the thermal treatment of the films.

  4. Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

    Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

    2012-01-01

    A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

  5. The effect of tin sulfide quantum dots size on photocatalytic and photovoltaic performance

    Cheraghizade, Mohsen; Jamali-Sheini, Farid; Yousefi, Ramin; Niknia, Farhad; Mahmoudian, Mohammad Reza; Sookhakian, Mehran

    2017-01-01

    In the current study, tin sulfide Quantum Dots (QDs) was successfully synthesized through sonochemical synthesis method by applying sonication times of 10, 15, and 20 min. Structural studies showed an orthorhombic phase of SnS and Sn_2S_3, and hexagonal phase of SnS_2. The particle size of tin sulfide QDs prepared through sonication time of 20 min was smaller than other QDs. According to TEM images, an increase in sonication time resulted in smaller spherical shaped particles. According to the results of Raman studies, five Raman bands and a shift towards the lower frequencies were observed by enhancing the sonication time. Based on the outcomes of photocatalytic activity, higher this property was observed for tin sulfide QDs, which are prepared through longer sonication time. Solar cell devices manufactured using tin sulfide QDs have a greater performance for the samples with more sonication time. Considering the obtained outcomes, the sonication time seems probable to be a factor affecting synthesis process of SnS QDs as well as its optical and electrical, photocatalytic, and photovoltaic conversion features. - Highlights: • Tin sulfide quantum dots (QDs) synthesized using a sonication method. • The sonication time was selected as a synthesis parameter. • The photocatalytic and photovoltaic performance were depended on synthesis parameter.

  6. Radiochemical studies of the separation of some chloro-complexes of tin, antimony, cadmium and indium

    Ramamoorthy, N.; Mani, R.S.

    1976-01-01

    Radioisotopes of tin, antimony, cadmium and indium such as tin-113, antimony-124, antimony-125, cadmium-109, cadmium-115, indium-113m and indium-111 find extensive applications as tracers in various fields. These isotopes are produced by irradiation of targets in a reactor or a cyclotron. It is usually observed that in addition to the nuclear reactions giving rise to the desired isotopes, side reactions also take place giving rise to radionuclidic contaminants. Thus, antimony-125, indium-114m and indium-114 will be present in the cyclotron produced indium-111. The authors have studied column chromatography over hydrous zirconia for the separation of antimony from tin and indium, and cadmium from indium. These studies have thrown light on the role and behaviour of antimony-125 present as an impurity in tin-113 during the preparation of tin-113-indium-113m generators and have indicated methods for the preparation of 115 Cd-sup(115m)In generators and for separation of 111 In from proton irradiated cadmium targets. (Authors)

  7. Synthesis, Spectral Characterization and Antioxidant Activity of Tin(II-Morin Complex

    Shahabuddin Memon

    2012-12-01

    Full Text Available The study focuses on the interaction between morin and Tin(II and the resulting complex was characterized through various analytical techniques by comparing it with morin. The complexation was confirmed at first by UV-Vis study, which shows that addition of Tin(II to morin may produce bathochromic shifts indicative of complex formation. IR spectral studies indicated that carbonyl has involved in coordination with Tin(II. Moreover, 1H-NMR studies validated that in conjunction with carbonyl, 3-OH of morin is more appropriate to be involved in complexation by replacement of its proton. Scavenging activities of morin and its Tin(II complex on DPPH• radical showed the inhibitory rates of 65% and 49%, respectively. In addition, the reducing capacity of morin was outstanding at 0.5 and 2.0 mg/ml concentrations relative to Tin(II complex. Overall, the study potentially shows the strong impact in order to design the anticancer drugs jointly from its cytotoxic potential and antioxidant activities, thereby selectively targeting the cancerous cells in result increasing their therapeutic index as well as extra advantages over other anticancer drugs.

  8. Heavy metal content of tinned soup as a function of storage time

    Stelte, W.

    1983-01-01

    Samples were taken from soups prior to their preservation in tins. None of the samples showed an increased content of the investigated heavy metals lead and mercury exceeding the amounts normally found in food. Thus it may be considered as certain that the heavy metal content of soups is not adversely affected by technical processes during their preparation. Increase in heavy metal content by metallic residues from tin manufacture is slight and mainly due to tin, whose content is on average increased in the soup by 0.4 mg/kg. For lead the influence is smaller and for mercury it is not significantly demonstrable. The metallic residues from tin manufacture are an irrelevant quantity in terms of nutrition physiology. Within the investigated 4-year storage-period the lead content shows a tendency to increase towards saturation. Cadmium remains essentially constant, the content of mercury has a downward tendency and reaches zero after 2 to 4 years. Consumers' exposure is in a range known for the consumption of other foodstuffs as well. The use of varnished tins to package industrial soups involves no exposure of consumers to heavy metals justifying any apprehension even after prolonged storage.

  9. Understanding the gas sensing properties of polypyrrole coated tin oxide nanofiber mats

    Bagchi, Sudeshna; Ghanshyam, C.

    2017-03-01

    Tin oxide-polypyrrole composites have been widely studied for their enhanced sensing performance towards ammonia vapours, but further investigations are required for an understanding of the interaction mechanisms with different target analytes. In this work, polypyrrole coated tin oxide fibers have been synthesized using a two-step approach of electrospinning and vapour phase polymerization for the sensing of ammonia, ethanol, methanol, 2-propanol and acetone vapours. The resistance variation in the presence of these vapours of different nature and concentration is investigated for the determination of sensor response. A decrease in resistance occurred on interaction of tin oxide-polypyrrole with ammonia, as opposed to previous reported works. Partial reduction of polypyrrole due to interfacial interaction with tin oxide has been proposed to explain this behavior. High sensitivity of 7.45 is achieved for 1 ppm ammonia concentration. Furthermore, the sensor exhibited high sensitivity and a faster response towards ethanol vapours although methanol has the highest electron donating capability. The catalytic mechanism has been discussed to explain this interesting behavior. The results reveal that interaction between tin oxide and polypyrrole is crucial to control the predominant sensing mechanism.

  10. Broad spectral response photodetector based on individual tin-doped CdS nanowire

    Weichang Zhou

    2014-12-01

    Full Text Available High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

  11. Release path temperatures of shock-compressed tin from dynamic reflectance and radiance measurements

    La Lone, B. M., E-mail: lalonebm@nv.doe.gov; Stevens, G. D.; Turley, W. D. [National Security Technologies, LLC, Special Technologies Laboratory, Santa Barbara, California 93111 (United States); Holtkamp, D. B. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Iverson, A. J. [National Security Technologies, LLC, Los Alamos Operations, Los Alamos, New Mexico 87544 (United States); Hixson, R. S.; Veeser, L. R. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); National Security Technologies, LLC, Los Alamos Operations, Los Alamos, New Mexico 87544 (United States)

    2013-08-14

    Dynamic reflectance and radiance measurements were conducted for tin samples shock compressed to 35 GPa and released to 15 GPa using high explosives. We determined the reflectance of the tin samples glued to lithium fluoride windows using an integrating sphere with an internal xenon flashlamp as an illumination source. The dynamic reflectance (R) was determined at near normal incidence in four spectral bands with coverage in visible and near-infrared spectra. Uncertainties in R/R{sub 0} are <2%, and uncertainties in absolute reflectance are <5%. In complementary experiments, thermal radiance from the tin/glue/lithium fluoride interface was recorded with similar shock stress and spectral coverage as the reflectance measurements. The two sets of experiments were combined to obtain the temperature history of the tin surface with an uncertainty of <2%. The stress at the interface was determined from photonic Doppler velocimetry and combined with the temperatures to obtain temperature-stress release paths for tin. We discuss the relationship between the experimental release paths and release isentropes that begin on the principal shock Hugoniot.

  12. The effect of tin sulfide quantum dots size on photocatalytic and photovoltaic performance

    Cheraghizade, Mohsen [Young Researchers and Elite Club, Ahvaz Branch, Islamic Azad University, Ahvaz (Iran, Islamic Republic of); Jamali-Sheini, Farid, E-mail: faridjamali@iauahvaz.ac.ir [Advanced Surface Engineering and Nano Materials Research Center, Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz (Iran, Islamic Republic of); Yousefi, Ramin [Department of Physics, Masjed-Soleiman Branch, Islamic Azad University (I.A.U), Masjed-Soleiman (Iran, Islamic Republic of); Niknia, Farhad [Young Researchers and Elite Club, Ahvaz Branch, Islamic Azad University, Ahvaz (Iran, Islamic Republic of); Mahmoudian, Mohammad Reza [Department of Chemistry, Shahid Sherafat, University of Farhangian, 15916, Tehran (Iran, Islamic Republic of); Sookhakian, Mehran [Centre for Ionic Liquids, Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia)

    2017-07-01

    In the current study, tin sulfide Quantum Dots (QDs) was successfully synthesized through sonochemical synthesis method by applying sonication times of 10, 15, and 20 min. Structural studies showed an orthorhombic phase of SnS and Sn{sub 2}S{sub 3}, and hexagonal phase of SnS{sub 2}. The particle size of tin sulfide QDs prepared through sonication time of 20 min was smaller than other QDs. According to TEM images, an increase in sonication time resulted in smaller spherical shaped particles. According to the results of Raman studies, five Raman bands and a shift towards the lower frequencies were observed by enhancing the sonication time. Based on the outcomes of photocatalytic activity, higher this property was observed for tin sulfide QDs, which are prepared through longer sonication time. Solar cell devices manufactured using tin sulfide QDs have a greater performance for the samples with more sonication time. Considering the obtained outcomes, the sonication time seems probable to be a factor affecting synthesis process of SnS QDs as well as its optical and electrical, photocatalytic, and photovoltaic conversion features. - Highlights: • Tin sulfide quantum dots (QDs) synthesized using a sonication method. • The sonication time was selected as a synthesis parameter. • The photocatalytic and photovoltaic performance were depended on synthesis parameter.

  13. Combined TiN- and TaN temperature compensated thin film resistors

    Malmros, Anna; Andersson, Kristoffer; Rorsman, Niklas

    2012-01-01

    The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temperature compensated TFRs by connecting TFRs of each compound in series or in parallel was demonstrated. TiN, TaN, and combined TiN and TaN TFRs for monolithic microwave integrated circuits (MMICs) were fabricated by reactive sputtering. DC characterization was performed over the temperature range of 30–200 °C. The TiN TFRs exhibited an increase in resistivity with temperature with TCRs of 540 and 750 ppm/°C. The TaN TFR on the other hand exhibited a negative TCR of − 470 ppm/°C. The shunted TFRs were fabricated by serial deposition of TiN and TaN to form a bilayer component. The TCRs of the series- and shunt configurations were experimentally reduced to − 60 and 100 ppm/°C, respectively. The concept of temperature compensation was used to build a Wheatstone bridge with an application in on-chip temperature sensing.

  14. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  15. First-principles analysis of structural and opto-electronic properties of indium tin oxide

    Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

    2012-05-01

    Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

  16. Tensile strained gray tin: Dirac semimetal for observing negative magnetoresistance with Shubnikov-de Haas oscillations

    Huang, Huaqing; Liu, Feng

    2017-05-01

    The extremely stringent requirement on material quality has hindered the investigation and potential applications of exotic chiral magnetic effect in Dirac semimetals. Here, we propose that gray tin is a perfect candidate for observing the chiral anomaly effect and Shubnikov-de-Haas (SdH) oscillation at relatively low magnetic field. Based on effective k .p analysis and first-principles calculations, we discover that gray tin becomes a Dirac semimetal under tensile uniaxial strain, in contrast to a topological insulator under compressive uniaxial strain as known before. In this newly found Dirac semimetal state, two Dirac points which are tunable by tensile [001] strains lie in the kz axis and Fermi arcs appear in the (010) surface. Due to the low carrier concentration and high mobility of gray tin, a large chiral anomaly induced negative magnetoresistance and a strong SdH oscillation are anticipated in this half of the strain spectrum. Comparing to other Dirac semimetals, the proposed Dirac semimetal state in the nontoxic elemental gray tin can be more easily manipulated and accurately controlled. We envision that gray tin provides a perfect platform for strain engineering of chiral magnetic effects by sweeping through the strain spectrum from positive to negative and vice versa.

  17. Synthesis and characterization of low-valence actinide phosphide tellurides and ternary selenium-halide iridium complexes; Synthese und Charakterisierung niedervalenter Actinoidphosphidtelluride und ternaerer Selen-Halogenid-Komplexe des Iridiums

    Stolze, Karoline

    2016-04-07

    The thesis on the synthesis and characterization of low-valence actinide phosphide tellurides and ternary selenium-halide iridium complexes includes two parts: a description of the experimental synthesis of UPTe and U2PTe2O and ThPTe and the synthesis of selenium-chloride iridium complexes and selenium-bromide iridium complexes. The characterization included X-ray diffraction and phase studies.

  18. Effect of cationic/anionic organic surfactants on evaporation induced self assembled tin oxide nanostructured films

    Khun Khun, Kamalpreet; Mahajan, Aman; Bedi, R.K.

    2011-01-01

    Tin oxide nanostructures with well defined morphologies have been obtained through an evaporation induced self assembly process. The technique has been employed using an ultrasonic nebulizer for production of aersol and its subsequent deposition onto a heated glass substrate. The precursor used for aersol production was modified by introducing cationic and anionic surfactants namely cetyl trimethyl ammonium bromide and sodium dodecyl sulphate respectively. The effect of surfactants on the structural, electrical and optical properties of self assembled tin oxide nanostructures were investigated by using X-ray diffraction, field emission scanning electroscope microscopy, two probe technique and photoluminiscence studies. The results reveal that high concentration of surfactants in the precursor solution leads to reduction in crystallite size with significant changes in the morphology of tin oxide nanostructures. Photoluminiscence studies of the nanostructures show emissions in the visible region which exhibit marked changes in the intensities upon variation of surfactants in the precursor solutions.

  19. Effect of cationic/anionic organic surfactants on evaporation induced self assembled tin oxide nanostructured films

    Khun Khun, Kamalpreet [Material Science Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Mahajan, Aman, E-mail: dramanmahajan@yahoo.co.in [Material Science Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India); Bedi, R.K. [Material Science Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005 (India)

    2011-01-15

    Tin oxide nanostructures with well defined morphologies have been obtained through an evaporation induced self assembly process. The technique has been employed using an ultrasonic nebulizer for production of aersol and its subsequent deposition onto a heated glass substrate. The precursor used for aersol production was modified by introducing cationic and anionic surfactants namely cetyl trimethyl ammonium bromide and sodium dodecyl sulphate respectively. The effect of surfactants on the structural, electrical and optical properties of self assembled tin oxide nanostructures were investigated by using X-ray diffraction, field emission scanning electroscope microscopy, two probe technique and photoluminiscence studies. The results reveal that high concentration of surfactants in the precursor solution leads to reduction in crystallite size with significant changes in the morphology of tin oxide nanostructures. Photoluminiscence studies of the nanostructures show emissions in the visible region which exhibit marked changes in the intensities upon variation of surfactants in the precursor solutions.

  20. Tribaloy alloy reinforced tin-bronze composite coating for journal bearing applications

    Gao, F.; Liu, R.; Wu, X.J.

    2011-01-01

    This article presents an experimental study of the tribological behavior of a tin/bronze-based composite coating. The improved-ductility Tribaloy alloy (T-401) particles are selected as the reinforcement. This coating is made on the bushing of planet journals used in aerospace engines, deposited with the high velocity oxygen fuel (HVOF) thermal spray technique. The tribological properties such as friction and wear resistance of the coated bushing are investigated under the WAMsc3 Sliding Contact Test, along with the leaded tin/bronze bushing tested for comparison. The testing results show that the bushing coated with the composite exhibits superior tribological properties to the leaded tin/bronze bushing in that the former runs longer before the friction coefficient reaches 0.5 and also leads a to lower wear rate than the latter. The experimental results and wear mechanisms of these two bushings are discussed with the assistance of worn surface analyses using scanning electron microscopy (SEM).

  1. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  2. Effect of gas ratio on tribological properties of sputter deposited TiN coatings

    Chavda, Mahesh R., E-mail: maheshchavda1990@gmail.com [Department of Mechanical Engineering, Dr. Jivraj Mehta Institute of Technology, Mogar-388340 (India); Chauhan, Kamlesh V.; Rawal, Sushant K., E-mail: sushantrawal.me@charusat.ac.in [CHAMOS Matrusanstha Department of Mechanical Engineering, Chandubhai S. Patel Institute of Technology, Charotar University of Science and Technology (CHARUSAT), Changa-388421 (India)

    2016-05-06

    Titanium nitride (TiN) coatings were deposited on Si, corning glass, pins of mild steel (MS, ϕ3mm), aluminium (Al, ϕ4mm) and brass (ϕ6mm) substratesby DC magnetron sputtering. The argon and nitrogen (Ar:N{sub 2})gas ratio was precisely controlled by Mass Flow Controller (MFC) and was varied systematically at diffract values of 10:10,12:08, 16:04 and 18:02sccm. The structural properties of TiN coatings were characterized by X-ray diffraction (XRD) and its surface topography was studied using field emission scanning electron microscopy (FE-SEM). The tribological properties of TiN coatings were investigated using pin-on-disc tribometer.

  3. The relationship between critical current and microstructure of internal tin wire

    Dietderich, D.R.; Hassenzahl, W.V.; Morris, J.W. Jr.

    1986-01-01

    Prior work on internal tin wire has shown that an increase in critical current results when the Nb 3 Sn reaction temperatures (650-730 0 C) are preceded by low temperature diffusion heat treatments that distribute the tin. These heat treatments produce a more uniform tin distribution through the niobium filament array before substantial Nb 3 Sn formation has occurred. Heat treatments as long as 19 days have been proposed as the optimal heat treatment for the conductor. However, it is possible to substantially reduce the low temperature heat treatment time while retaining the same high critical current. The success of shortened heat treatments may be interpreted on the basis of the Cu-Sn reaction, diffusion kinetics and the Nb 3 Sn growth kinetics

  4. Determination of trace amounts of tin in geological materials by atomic absorption spectrometry

    Welsch, E.P.; Chao, T.T.

    1976-01-01

    An atomic absorption method is described for the determination of traces of tin in rocks, soils, and stream sediments. A dried mixture of the sample and ammonium iodide is heated to volatilize tin tetraiodide -which is then dissolved in 5 % hydrochloric acid, extracted into TOPO-MIBK, and aspirated into a nitrous oxide-acetylene flame. The limit of determination is 2 p.p.m. tin and the relative standard deviation ranges from 2 to 14 %. Up to 20 % iron and 1000 p.p.m. Cu, Pb, Zn, Mn, Hg, Mo, V, or W in the sample do not interfere. As many as 50 samples can be easily analyzed per man-day. ?? 1976.

  5. State of the Art Power-in Tube Niobium-Tin Superconductors

    Godeke, A.; Ouden, A. Den; Nijhuis, A.; ten Kate, H.H.J.

    2008-06-01

    Powder-in-Tube (PIT) processed Niobium-Tin wires are commercially manufactured for nearly three decades and have demonstrated a combination of very high current density (presently up to 2500 A mm{sup -2} non-Cu at 12 T and 4.2 K) with fine (35 {micro}m), well separated filaments. We review the developments that have led to the present state of the art PIT Niobium-Tin wires, discuss the wire manufacturing and A15 formation processes, and describe typical superconducting performance in relation to magnetic field and strain. We further highlight successful applications of PIT wires and conclude with an outlook on possibilities for further improvements in the performance of PIT Niobium-Tin wires.

  6. Research on hardness and tensile properties of A390 alloy with tin addition

    Si, Yi

    2018-03-01

    The effect of tin content on hardness and tensile properties of A390 alloys has been discussed. The microstructure of the A390 alloy with tin addition has been surveyed by OM and investigated by SEM. Research showed that β-Sn in the alloy precipitation forms were mainly small blocks and thin strips, particles within the Al2Cu network or large blocks consisting of β-Sn and Al2Cu on Al/Si interfaces or α-Al grain boundaries. Spheroidization of the primary and eutectic silicon was improved due to Sn accretion. With the augment of element tin, hardness of casting alloy is much higher than that of alloy after heat treatment. The elongation and ultimate tensile strength (UTS) were increased in Sn addition from 0 to 1%, which is attributed to the multiple action of Sn.

  7. Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

    Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitriy; Hartig, Carsten

    2017-03-01

    The majority of scatterometric production control models assume constant optical properties of the materials and only dimensional parameters are allowed to vary. However, this assumption, especially in case of thin-metal films, negatively impacts model precision and accuracy. In this work we focus on optical modeling of the TiN metal hardmask for scatterometry applications. Since the dielectric function of TiN exhibits thickness dependence, we had to take this fact into account. Moreover, presence of the highly absorbing films influences extracted thicknesses of dielectric layers underneath the metal films. The later phenomenon is often not reflected by goodness of fit. We show that accurate optical modeling of metal is essential to achieve desired scatterometric model quality for automatic process control in microelectronic production. Presented modeling methodology can be applied to other TiN applications such as diffusion barriers and metal gates as well as for other metals used in microelectronic manufacturing for all technology nodes.

  8. Recovery Of Valuable Metals In Tin-Based Anodic Slimes By Carbothermic Reaction

    Han Chulwoong

    2015-06-01

    Full Text Available This study investigated the recovery of anodic slimes by carbothermic reaction in the temperature range of 973~1,273K and amount of carbon as a function of time. Tin anodic slime samples were collected from the bottom of the electrolytic cells during the electro-refining of tin. The anodic slimes are consisted of high concentrated tin, silver, copper and lead oxides. The kinetics of reduction were determined by means of the weight-loss measurement technique. In order to understand in detail of carbothermic reaction, thermodynamic calculation was carried out and compared with experiments. From thermodynamic calculation and experiment, it was confirmed that Sn-based anodic slime could be reduced by controlling temperature and amount of carbon. However, any tendency between the reduction temperature and carbon content for the reduction reaction was not observed.

  9. Recovery of Tin and Nitric Acid from Spent Solder Stripping Solutions

    Ahn, Jae-Woo; Ryu, Seong-Hyung; Kim, Tae-young

    2015-01-01

    Spent solder-stripping solutions containing tin, copper, iron, and lead in nitric acid solution, are by-products of the manufacture of printed-circuit boards. The recovery of these metals and the nitric acid, for re-use has economic and environmental benefits. In the spent solder-stripping solution, a systematic method to determine a suitable process for recovery of valuable metals and nitric acid was developed. Initially, more than 90% of the tin was successfully recovered as high-purity SnO 2 by thermal precipitation at 80 ℃ for 3 hours. About 94% of the nitric acid was regenerated effectively from the spent solutions by diffusion dialysis, after which there remained copper, iron, and lead in solution. Leakage of tin through the anion-exchange membrane was the lowest (0.026%), whereas Pb-leakage was highest (4.26%). The concentration of the regenerated nitric acid was about 5.1 N.

  10. The development of latent fingerprints by zinc oxide and tin oxide nanoparticles prepared by precipitation technique

    Luthra, Deepali; Kumar, Sacheen

    2018-05-01

    Fingerprints are the very important evidence at the crime scene which must be developed clearly with shortest duration of time to solve the case. Metal oxide nanoparticles could be the mean to develop the latent fingerprints. Zinc oxide and Tin Oxide Nanoparticles were prepared by using chemical precipitation technique which were dried and characterized by X-ray diffraction, UV-Visible spectroscopy and FTIR. The size of zinc oxide crystallite was found to be 14.75 nm with minimum reflectance at 360 nm whereas tin oxide have the size of 90 nm and reflectance at minimum level 321 nm. By using these powdered samples on glass, plastic and glossy cardboard, latent fingerprints were developed. Zinc oxide was found to be better candidate than tin oxide for the fingerprint development on all the three types of substrates.

  11. Experimental study on TiN coated racetrack-type ceramic pipe

    Wang, Jie; Xu, Yan-Hui; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-11-01

    TiN film was coated on the internal surface of a racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. The highest deposition rate was 156 nm/h, which was obtained by magnetron sputtering coating. Based on AFM, SEM and XPS test results, the properties of TiN film, such as film roughness and surface morphology, were analyzed. Furthermore, the deposition rates were studied with two different cathode types, Ti wires and Ti plate. According to the SEM test results, the deposition rate of TiN/Ti film was about 800 nm/h with Ti plate cathode by DC magnetron sputtering. Using Ti plate cathode rather than Ti wire cathode can greatly improve the film deposition rate. Supported by National Nature Science Foundation of China (11075157)

  12. Production of multifilamentary Nb3Sn composites incorporating a high tin bronze

    Petrovich, A.; Zeithlin, B.A.; Walker, M.S.

    1977-01-01

    The economics and processing methods have been examined for the fabrication of multifilamentary Nb 3 Sn using a high tin bronze reactive matrix. Four conductor configurations utilizing the high tin bronze were compared with a conventional Cu-13 wt % Sn bronze. The most promising of these designs is potentially 40% lower in cost per ampere meter than the conventional composite. Large hydrostatic extrusion facilities, which are required for the high tin processing, are not presently available in this country but can be made by conversion of conventional presses. They exist in Europe. Experiments were conducted to investigate the applicability of hydrostatic extrusion, and billet components were successfully prepared using the hydrostatic extrusion technique. We have concluded that the economics, availability of facilities and initial fabrication results are favorable for this type of conductor and that the next stage in this program of scale up to extrusion and drawing of 2'' to 3'' diameter composite billets should be undertaken

  13. Mechanical properties of TiN films deposited by changed-pressure r.f. sputtering

    Kubo, Y.; Hashimoto, M.

    1991-01-01

    TiN was deposited onto glass, stainless steel and cemented carbide by r.f. magnetron sputtering. The mechanical properties of TiN such as hardness, internal stress and adhesion were assessed by the Vickers microhardness test, the bending method and the modified scratch test. It was found that the operating pressure during sputtering deposition strongly affects these mechanical properties. As the operating pressure is increased beyond 0.6-0.7 Pa, the adhesion of TiN films onto the substrate increases enormously, but the hardness decreases owing to the release of the high compressive stress in the film. Therefore changing the pressure from high to low during deposition could be a good way of optimizing both hardness and adhesion. The effectiveness of this changed-pressure process was experimentally verified by cutting tests using TiN-coated cemented carbide tools. This process will be applicable to any other hard coating materials having high compressive stresses. (orig.)

  14. Selectivity of Catalytically Modified Tin Dioxide to CO and NH3 Gas Mixtures

    Artem Marikutsa

    2015-10-01

    Full Text Available This paper is aimed at selectivity investigation of gas sensors, based on chemically modified nanocrystalline tin dioxide in the detection of CO and ammonia mixtures in air. Sol-gel prepared tin dioxide was modified by palladium and ruthenium oxides clusters via an impregnation technique. Sensing behavior to CO, NH3 and their mixtures in air was studied by in situ resistance measurements. Using the appropriate match of operating temperatures, it was shown that the reducing gases mixed in a ppm-level with air could be discriminated by the noble metal oxide-modified SnO2. Introducing palladium oxide provided high CO-sensitivity at 25–50 °C. Tin dioxide modified by ruthenium oxide demonstrated increased sensor signals to ammonia at 150–200 °C, and selectivity to NH3 in presence of higher CO concentrations.

  15. IMPROVEMENT OF FATIGUE STRENGTH OF TIN BABBITT BY REINFORCING WITH NANO ILMENITE

    M. V. S. BABU

    2017-08-01

    Full Text Available Tin Babbitt is an idle journal bearing material, its fatigue strength limits and its usage. To enhance its fatigue strength, in this paper a Tin Babbitt metal matrix is reinforced with nano Ilmenite. The metal matrix nanocomposite was fabricated by using ultrasonic assisted stir casting technique. ASTM standards in statistical planning for fatigue testing were employed in planning the fatigue tests. Fatigue tests were conducted at three stress levels, i.e., 0.9 UTS, 0.7 UTS and 0.5 UTS. Tests were conducted on a rotating-beam type fatigue testing machine. It was observed that the nano Ilmenite reinforcement enhanced the fatigue strength of Tin Babbitt.

  16. Tin-Assisted Synthesis of ɛ -Ga2O3 by Molecular Beam Epitaxy

    Kracht, M.; Karg, A.; Schörmann, J.; Weinhold, M.; Zink, D.; Michel, F.; Rohnke, M.; Schowalter, M.; Gerken, B.; Rosenauer, A.; Klar, P. J.; Janek, J.; Eickhoff, M.

    2017-11-01

    The synthesis of ɛ -Ga2O3 and β -Ga2O3 by plasma-assisted molecular beam epitaxy on (001 )Al2O3 substrates is studied. The growth window of β -Ga2O3 in the Ga-rich regime, usually limited by the formation of volatile gallium suboxide, is expanded due to the presence of tin during the growth process, which stabilizes the formation of gallium oxides. X-ray diffraction, transmission electron microscopy, time-of-flight secondary-ion mass spectrometry, Raman spectroscopy, and atomic force microscopy are used to analyze the influence of tin on the layer formation. We demonstrate that it allows the synthesis of phase-pure ɛ -Ga2O3 . A growth model based on the oxidation of gallium suboxide by reduction of an intermediate sacrificial tin oxide is suggested.

  17. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    Chen, Hong; Duan, Lian; Lan, Hui [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Wang, Xinbing, E-mail: xbwang@hust.edu.cn; Chen, Ziqi; Zuo, Duluo [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Lu, Peixiang [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-05-21

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  18. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    Chen, Hong; Duan, Lian; Lan, Hui; Wang, Xinbing; Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-01-01

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data

  19. The Evaluation of Novel Tin Materials for the Removal of Technetium from Groundwater

    Parker, Kent E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wellman, Dawn M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-06-30

    Technetium-99 (99Tc) is present at several U.S. Department of Energy (DOE) facilities, including the Hanford, Oak Ridge, Paducah, Portsmouth, and Savannah River sites. Due to its mobility, persistence, and toxicity in the environment, developing means to immobilize and/or remove technetium from the environment is currently a top priority for DOE. However, there are currently very few approaches that effectively manage the risks of technetium to human health and the environment. The objective of this study is to evaluate novel synthetic materials that could enable direct removal of technetium from groundwater. The following report •assesses the viability of existing methodologies for synthesis of tin (II) apatite for in situ formation and remediation of 99Tc within the subsurface environment •discusses the development of alternative methodologies for production of tin (II) apatite •evaluates nanoporous tin phosphate materials for removal of technetium from groundwater.

  20. Reactivation of a Tin-Oxide-Containing Catalyst

    Hess, Robert; Sidney, Barry; Schryer, David; Miller, Irvin; Miller, George; Upchurch, Bill; Davis, Patricia; Brown, Kenneth

    2010-01-01

    The electrons in electric-discharge CO2 lasers cause dissociation of some CO2 into O2 and CO, and attach themselves to electronegative molecules such as O2, forming negative O2 ions, as well as larger negative ion clusters by collisions with CO or other molecules. The decrease in CO2 concentration due to dissociation into CO and O2 will reduce the average repetitively pulsed or continuous wave laser power, even if no disruptive negative ion instabilities occur. Accordingly, it is the primary object of this invention to extend the lifetime of a catalyst used to combine the CO and O2 products formed in a laser discharge. A promising low-temperature catalyst for combining CO and O2 is platinum on tin oxide (Pt/SnO2). First, the catalyst is pretreated by a standard procedure. The pretreatment is considered complete when no measurable quantity of CO2 is given off by the catalyst. After this standard pretreatment, the catalyst is ready for its low-temperature use in the sealed, high-energy, pulsed CO2 laser. However, after about 3,000 minutes of operation, the activity of the catalyst begins to slowly diminish. When the catalyst experiences diminished activity during exposure to the circulating gas stream inside or external to the laser, the heated zone surrounding the catalyst is raised to a temperature between 100 and 400 C. A temperature of 225 C was experimentally found to provide an adequate temperature for reactivation. During this period, the catalyst is still exposed to the circulating gas inside or external to the laser. This constant heating and exposing the catalyst to the laser gas mixture is maintained for an hour. After heating and exposing for an appropriate amount of time, the heated zone around the catalyst is allowed to return to the nominal operating temperature of the CO2 laser. This temperature normally resides in the range of 23 to 100 C. Catalyst activity can be measured as the percentage conversion of CO to CO2. In the specific embodiment