Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

International Nuclear Information System (INIS)

Bae, J.W.; Kim, J.S.; Yeom, G.Y.

2001-01-01

Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

Plastic deformation of indium nanostructures

International Nuclear Information System (INIS)

Lee, Gyuhyon; Kim, Ju-Young; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

2011-01-01

Highlights: → Indium nanopillars display two different deformation mechanisms. → ∼80% exhibited low flow stresses near that of bulk indium. → Low strength nanopillars have strain rate sensitivity similar to bulk indium. → ∼20% of compressed indium nanopillars deformed at nearly theoretical strengths. → Low-strength samples do not exhibit strength size effects. - Abstract: Mechanical properties and morphology of cylindrical indium nanopillars, fabricated by electron beam lithography and electroplating, are characterized in uniaxial compression. Time-dependent deformation and influence of size on nanoscale indium mechanical properties were investigated. The results show two fundamentally different deformation mechanisms which govern plasticity in these indium nanostructures. We observed that the majority of indium nanopillars deform at engineering stresses near the bulk values (Type I), with a small fraction sustaining flow stresses approaching the theoretical limit for indium (Type II). The results also show the strain rate sensitivity and flow stresses in Type I indium nanopillars are similar to bulk indium with no apparent size effects.

Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

KAUST Repository

Alshammari, Fwzah Hamud; Hota, Mrinal Kanti; Wang, Zhenwei; Aljawhari, Hala; Alshareef, Husam N.

2017-01-01

Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

Science.gov (United States)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Atom diffraction with a 'natural' metastable atom nozzle beam

International Nuclear Information System (INIS)

Karam, J-C; Wipf, N; Grucker, J; Perales, F; Boustimi, M; Vassilev, G; Bocvarski, V; Mainos, C; Baudon, J; Robert, J

2005-01-01

The resonant metastability-exchange process is used to obtain a metastable atom beam with intrinsic properties close to those of a ground-state atom nozzle beam (small angular aperture, narrow velocity distribution). The estimated effective source diameter (15 μm) is small enough to provide at a distance of 597 mm a transverse coherence radius of about 873 nm for argon, 1236 nm for neon and 1660 nm for helium. It is demonstrated both by experiment and numerical calculations with He*, Ne* and Ar* metastable atoms, that this beam gives rise to diffraction effects on the transmitted angular pattern of a silicon-nitride nano-slit grating (period 100 nm). Observed patterns are in good agreement with previous measurements with He* and Ne* metastable atoms. For argon, a calculation taking into account the angular aperture of the beam (0.35 mrad) and the effect of the van der Waals interaction-the van der Waals constant C 3 1.83 +0.1 -0.15 au being derived from spectroscopic data-leads to a good agreement with experiment

Beams made of twisted atoms: A theoretical analysis

Energy Technology Data Exchange (ETDEWEB)

Hayrapetyan, Armen [Physikalisches Institut, Ruprecht-Karls-Universitaet Heidelberg, 69120 Heidelberg (Germany); Matula, Oliver [Physikalisches Institut, Ruprecht-Karls-Universitaet Heidelberg, 69120 Heidelberg (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany); Surzhykov, Andrey [Helmholtz-Institut Jena, 07743 Jena (Germany); Fritzsche, Stephan [Helmholtz-Institut Jena, 07743 Jena (Germany); Theoretisch-Physikalisches Institut, Friedrich-Schiller-Universitaet Jena, 07743 Jena (Germany)

2014-07-01

We have analyzed Bessel beams of two-level atoms that are driven by a linearly polarized laser light. Based on the Schroedinger equation for two-level systems, we first determine the states of two-level atoms in a plane-wave field by taking into account propagation directions both of the atom and the field. For such laser-driven two-level atoms, we construct Bessel beams by going beyond the typical paraxial approximation. In particular, we show that the probability density of these atomic beams exhibits a non-trivial, Bessel-squared-type behavior. The profile of such twisted atoms is affected by atom and laser parameters, such as the nuclear charge, atom velocity, laser frequency, and propagation geometry of the atom and laser beams. Moreover, we spatially and temporally characterize the beam of hydrogen and selected (neutral) alkali-metal atoms that carry non-zero orbital angular momentum (OAM). The proposed spatiotemporal Bessel states (i) are able to describe twisted states of any two-level system which is driven by the radiation field and (ii) have potential applications in atomic and nuclear processes as well as in quantum communication.

A Compact, High-Flux Cold Atom Beam Source

Science.gov (United States)

Kellogg, James R.; Kohel, James M.; Thompson, Robert J.; Aveline, David C.; Yu, Nan; Schlippert, Dennis

2012-01-01

The performance of cold atom experiments relying on three-dimensional magneto-optical trap techniques can be greatly enhanced by employing a highflux cold atom beam to obtain high atom loading rates while maintaining low background pressures in the UHV MOT (ultra-high vacuum magneto-optical trap) regions. Several techniques exist for generating slow beams of cold atoms. However, one of the technically simplest approaches is a two-dimensional (2D) MOT. Such an atom source typically employs at least two orthogonal trapping beams, plus an additional longitudinal "push" beam to yield maximum atomic flux. A 2D atom source was created with angled trapping collimators that not only traps atoms in two orthogonal directions, but also provides a longitudinal pushing component that eliminates the need for an additional push beam. This development reduces the overall package size, which in turn, makes the 2D trap simpler, and requires less total optical power. The atom source is more compact than a previously published effort, and has greater than an order of magnitude improved loading performance.

Characteristics of plasma in uranium atomic beam produced by electron-beam heating

International Nuclear Information System (INIS)

Ohba, Hironori; Shibata, Takemasa

2000-08-01

The electron temperature of plasma and the ion flux ratio in the uranium atomic beam produced by electron-beam heating were characterized with Langmuir probes. The electron temperature was 0.13 eV, which was lower than the evaporation surface temperature. The ion flux ratio to atomic beam flux was more than 3% at higher evaporation rates. The ion flux ratio has increased with decreasing acceleration energy of the electron-beam under constant electron-beam power. This is because of an increase of electron-beam current and a large ionization cross-section of uranium by electron-impact. It was confined that the plasma is produced by electron-impact ionization of the evaporated atoms at the evaporation source. (author)

Atomic physics using relativistic H- beams

International Nuclear Information System (INIS)

Bryant, H.C.

2005-01-01

Full text: An 8 GeV hydrogen atom can traverse a focused laser beam of width of 1 micron in a time of 353 attoseconds in its rest frame. A design is currently underway at Fermilab for a superconducting linear accelerator that will accelerate H - ions to 8 GeV. This 'Proton Driver' beam is intended to be injected, after stripping down to protons, into the 120 GeV Main Injector for the mass production of neutrinos aimed at a neutrino detector (MINOS) in a mine shaft in Soudan, Minnesota (USA) for the study of neutrino oscillations. It has not passed unnoticed that with some advance planning a few nanoamps from the up-to-250 mA beam could be diverted for atomic physics experiments. Relativistic kinematics enable the creation of extreme conditions for a beam atom. For example, the Doppler shift allows a very large tuning range in the atom's rest frame of a laser beam that is fixed- frequency in the lab. At 8 GeV the rest frame Doppler shift ranges from a factor of 19 in the forward direction to 0.05 backward. The laser intensity is enhanced by the square of the Doppler shift, so that the world's most intense laser beam would be amplified by a factor of 360 in the atom's rest frame. Furthermore, although there are extreme changes in the frequency and intensity in the atom's frame as one changes the intersection angle, the ponderomotive potential remains constant, as it is a relativistic invariant. One of the interesting problems that arises in the planning for this accelerator is the stripping of electrons from the negative ions by photodetachment from Doppler shifted thermal photons. We estimate that, if the transfer lines are kept at 300 K (room temperature), the mean free path at 8 GeV for stripping from collisions with cavity radiation is about 1300 km. The physics of the interactions of such a beam with very thin material foils, again in the attosecond regime, has been treated theoretically, but has not been studied experimentally at such high energies. We will

Laser-evaporated pulsed atomic beam and its application

International Nuclear Information System (INIS)

Zhang Yanping; Hu Qiquan; Su Haizheng; Lin Fucheng

1986-01-01

For the purpose of obtaining an atomic beam, laser-evaporated atomic vapor was studied experimentally. The signals of multiphoton ionization of refractory metal atoms obtained with the pulsed atomic beam were observed, and the problem associated with the detection of these signals was discussed

Electronic and chemical properties of indium clusters

International Nuclear Information System (INIS)

Rayane, D.; Khardi, S.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

1989-01-01

Indium clusters are produced by the inert gas condensation technique. The ionization potentials are found higher for small clusters than for the Indium atom. This is explained by the p character of the bonding as in aluminium. Doubly charge clusters are also observed and fragmentation processes discussed. Finally small Indium clusters 3< n<9 are found very reactive with hydrocarbon. (orig.)

Noninterferometric phase imaging of a neutral atomic beam

International Nuclear Information System (INIS)

Fox, P.J.; Mackin, T.R.; Turner, L.D.; Colton, I.; Nugent, K.A.; Scholten, R.E.

2002-01-01

We demonstrate quantitative phase imaging of a neutral atomic beam by using a noninterferometric technique. A collimated thermal atomic beam is phase shifted by an off-resonant traveling laser beam with both a Gaussian and a TEM 01 profile and with both red and blue detuning of as much as 50 GHz. Phase variations of more than 1000 rad were recovered from velocity-selective measurements of the propagation of the atomic beam and were found to be in quantitative agreement with theoretical predictions based on independently measured phase object intensity profiles and detunings

Short-range order in amorphous thin films of indium selenides

International Nuclear Information System (INIS)

Zakharov, V.P.; Poltavtsev, Yu.G.; Sheremet, G.P.

1982-01-01

A structure of the short-range order and a character of interatomic interactions in indium selenides Insub(1-x)Sesub(x) with 0.333 <= x <= 0.75, obtained in the form of amorphous films 0.05-0.80 μm thick are studied using electron diffraction method. It is found out that mostly tetrahedrical coordination of nearest neighbours in the vicinity of indium atoms is characteristic for studied amorphous films, and coordination of selenium atoms is different. Amorphous film with x=0.75 posesses a considereably microheterogeneous structure of the short-range order, which is characterized by the presence of microunclusions of amorphous selenium and atoms of indium, octohedrically coordinated by selenium atoms

New indium selenite-oxalate and indium oxalate with two- and three-dimensional structures

International Nuclear Information System (INIS)

Cao Junjun; Li Guodong; Chen Jiesheng

2009-01-01

Two new indium(III) compounds with extended structures, [In 2 (SeO 3 ) 2 (C 2 O 4 )(H 2 O) 2 ].2H 2 O (I) and [NH 3 (CH 2 ) 2 NH 3 ][In(C 2 O 4 ) 2 ] 2 .5H 2 O (II), have been prepared under mild hydrothermal conditions and structurally characterized by single-crystal X-ray diffraction, thermogravimetric analysis and infrared spectroscopy. Compound I crystallizes in the triclinic system, space group P-1, with a=5.2596(11) A, b=6.8649(14) A, c=9.3289(19) A, α=101.78(3) o , β=102.03(3) o , γ=104.52(3) o , while compound II crystallizes in the orthorhombic system, space group Fdd2, with a=15.856(3) A, b=31.183(6) A, c=8.6688(17) A. In compound I, indium-selenite chains are bridged by oxalate units to form two-dimensional (2D) In 2 (SeO 3 ) 2 C 2 O 4 layers, separated by non-coordinating water molecules. In compound II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered channels. - Graphical abstract: Two new indium(III) compounds have been hydrothermally synthesized and structurally characterized. In I, the indium-selenite chains are bridged by oxalate units to form 2D In 2 (SeO 3 ) 2 C 2 O 4 layers. In II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered ring channels

Cascaded two-photon spectroscopy of Yb atoms with a transportable effusive atomic beam apparatus

International Nuclear Information System (INIS)

Song, Minsoo; Yoon, Tai Hyun

2013-01-01

We present a transportable effusive atomic beam apparatus for cascaded two-photon spectroscopy of the dipole-forbidden transition (6s 2 1 S 0 ↔ 6s7s 1 S 0 ) of Yb atoms. An ohmic-heating effusive oven is designed to have a reservoir volume of 1.6 cm 3 and a high degree of atomic beam collimation angle of 30 mrad. The new atomic beam apparatus allows us to detect the spontaneously cascaded two-photons from the 6s7s 1 S 0 state via the intercombination 6s6p 3 P 1 state with a high signal-to-noise ratio even at the temperature of 340 °C. This is made possible in our apparatus because of the enhanced atomic beam flux and superior detection solid angle.

Magneto-optical transmission-reflection beam splitter for multi-level atoms

International Nuclear Information System (INIS)

Murphy, J.E.; Goodman, P.; Sidorov, A.I.

1994-01-01

An atomic de Broglie wave beam splitter is proposed. The interaction of multi-level atoms (J g = 1 - J e = 0) with a laser beam in the presence of a static magnetic field leads to the partial transmission and reflection of the atomic beam. The coherent splitting of the atomic beam occurs due to non-adiabatic transitions between different dressed states in the vicinity of avoided crossings. The transition probabilities and populations of split beams are dependent on the value of the magnetic field, laser detuning, and the ratio between different polarization components in the laser beam. For optimal conditions the population of each of the two transmitted and two reflected beams is 25 per cent. For cooled atoms it is possible to obtain splitting angles of 80 mrad. The effect of spontaneous emission during the atom-light interaction was estimated and for a reasonable detuning losses were reduced to less than 10 per cent. 14 refs., 1 tab., 6 figs

A polarized atomic-beam target for COSY-Juelich

International Nuclear Information System (INIS)

Eversheim, P. D.; Altmeier, M.; Felden, O.; Glende, M.; Walker, M.; Hiemer, A.; Gebel, R.

1998-01-01

An atomic-beam target (ABT) for the EDDA experiment has been built in Bonn and was tested for the very first time at the cooler synchrotron COSY. The ABT differs from the polarized colliding-beams ion source for COSY in the DC-operation of the dissociator and the use of permanent 6-pole magnets. At present the beam optics of the ABT is set-up for maximum density in the interaction zone, but for target-cell operation it can be modified to give maximum intensity. The modular concept of this atomic ground-state target allows to provide all vector- (and tensor) polarizations for protons and deuterons, respectively. Up to now the polarization of the atomic-beam could be verified by the EDDA experiment to be > or approx. 80% with a density in the interaction zone of > or approx. 10 11 atoms/cm 2

Cascaded two-photon spectroscopy of Yb atoms with a transportable effusive atomic beam apparatus

Energy Technology Data Exchange (ETDEWEB)

Song, Minsoo; Yoon, Tai Hyun [Department of Physics, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of)

2013-02-15

We present a transportable effusive atomic beam apparatus for cascaded two-photon spectroscopy of the dipole-forbidden transition (6s{sup 2} {sup 1}S{sub 0}{r_reversible} 6s7s {sup 1}S{sub 0}) of Yb atoms. An ohmic-heating effusive oven is designed to have a reservoir volume of 1.6 cm{sup 3} and a high degree of atomic beam collimation angle of 30 mrad. The new atomic beam apparatus allows us to detect the spontaneously cascaded two-photons from the 6s7s{sup 1}S{sub 0} state via the intercombination 6s6p{sup 3}P{sub 1} state with a high signal-to-noise ratio even at the temperature of 340 Degree-Sign C. This is made possible in our apparatus because of the enhanced atomic beam flux and superior detection solid angle.

Atom beams split by gentle persuasion

International Nuclear Information System (INIS)

Pool, R.

1994-01-01

Two different research teams have taken a big step toward atom interferometry. They have succeeded in splitting atomic beams by using atoms in spin states that neither absorb nor reemit laser light. By proper adjustment of experimental conditions, atoms are changed from one spin state to another, without passing through the intermediary excited state. The atoms in essence absorb momentum from the laser photons, without absorption or emission of photons. The change in momentum deflects atoms in the proper spin state

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

Science.gov (United States)

McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

2018-05-01

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

Polarization measurement of atomic hydrogen beam spin-exchanged with optically oriented sodium atoms

International Nuclear Information System (INIS)

Ueno, Akira; Ogura, Kouichi; Wakuta, Yoshihisa; Kumabe, Isao

1988-01-01

The spin-exchange reaction between hydrogen atoms and optically oriented sodium atoms was used to produce a polarized atomic hydrogen beam. The electron-spin polarization of the atomic hydrogen beam, which underwent the spin-exchange reaction with the optically oriented sodium atoms, was measured. A beam polarization of -(8.0±0.6)% was obtained when the thickness and polarization of the sodium target were (5.78±0.23)x10 13 atoms/cm 2 and -(39.6±1.6)%, respectively. The value of the spin-exchange cross section in the forward scattering direction, whose scattering angle in the laboratory system was less than 1.0 0 , was obtained from the experimental results as Δσ ex =(3.39±0.34)x10 -15 cm 2 . This value is almost seven times larger than the theoretical value calculated from the Na-H potential. The potential was computed quantum mechanically in the space of the appropriate wave functions of the hydrogen and the sodium atoms. (orig./HSI)

A Survey of Atom Interferometer Beam-Combination Configurations and Beam Splitter Designs

National Research Council Canada - National Science Library

Zhang, Xiaolei

2005-01-01

This report summarizes the state of the art of atom-interferometry experiments, with an emphasis on the beam-splitting and beam-combination configurations, as well as on the different choices of beam...

Effect of Temperature on Nucleation of Nanocrystalline Indium Tin Oxide Synthesized by Electron-Beam Evaporation

Science.gov (United States)

Shen, Yan; Zhao, Yujun; Shen, Jianxing; Xu, Xiangang

2017-07-01

Indium tin oxide (ITO) has been widely applied as a transparent conductive layer and optical window in light-emitting diodes, solar cells, and touch screens. In this paper, crystalline nano-sized ITO dendrites are obtained using an electron-beam evaporation technique. The surface morphology of the obtained ITO was studied for substrate temperatures of 25°C, 130°C, 180°C, and 300°C. Nano-sized crystalline dendrites were synthesized only at a substrate temperature of 300°C. The dendrites had a cubic structure, confirmed by the results of x-ray diffraction and transmission electron microscopy. The growth mechanism of the nano-crystalline dendrites could be explained by a vapor-liquid-solid (VLS) growth model. The catalysts of the VLS process were indium and tin droplets, confirmed by varying the substrate temperature, which further influenced the nucleation of the ITO dendrites.

Laser cooling of a magnetically guided ultra cold atom beam

Energy Technology Data Exchange (ETDEWEB)

Aghajani-Talesh, Anoush

2014-07-01

This thesis examines two complimentary methods for the laser cooling of a magnetically guided ultra-cold atom beam. If combined, these methods could serve as a starting point for high-through put and possibly even continuous production of Bose-Einstein condensates. First, a mechanism is outlined to harvest ultra cold atoms from a magnetically guided atom beam into an optical dipole trap. A continuous loading scheme is described that dissipates the directed kinetic energy of a captured atom via deceleration by a magnetic potential barrier followed by optical pumping to the energetically lowest Zeeman sublevel. The application of this scheme to the transfer of ultra cold chromium atoms from a magnetically guided atom beam into a deep optical dipole trap is investigated via numerical simulations of the loading process. Based on the results of the theoretical studies the feasibility and the efficiency of our loading scheme, including the realisation of a suitable magnetic field configuration, are analysed. Second, experiments were conducted on the transverse laser cooling of a magnetically guided beam of ultra cold chromium atoms. Radial compression by a tapering of the guide is employed to adiabatically heat the beam. Inside the tapered section heat is extracted from the atom beam by a two-dimensional optical molasses perpendicular to it, resulting in a significant increase of atomic phase space density. A magnetic offset field is applied to prevent optical pumping to untrapped states. Our results demonstrate that by a suitable choice of the magnetic offset field, the cooling beam intensity and detuning, atom losses and longitudinal heating can be avoided. Final temperatures below 65 μK have been achieved, corresponding to an increase of phase space density in the guided beam by more than a factor of 30.

Laser cooling of a magnetically guided ultra cold atom beam

International Nuclear Information System (INIS)

Aghajani-Talesh, Anoush

2014-01-01

This thesis examines two complimentary methods for the laser cooling of a magnetically guided ultra-cold atom beam. If combined, these methods could serve as a starting point for high-through put and possibly even continuous production of Bose-Einstein condensates. First, a mechanism is outlined to harvest ultra cold atoms from a magnetically guided atom beam into an optical dipole trap. A continuous loading scheme is described that dissipates the directed kinetic energy of a captured atom via deceleration by a magnetic potential barrier followed by optical pumping to the energetically lowest Zeeman sublevel. The application of this scheme to the transfer of ultra cold chromium atoms from a magnetically guided atom beam into a deep optical dipole trap is investigated via numerical simulations of the loading process. Based on the results of the theoretical studies the feasibility and the efficiency of our loading scheme, including the realisation of a suitable magnetic field configuration, are analysed. Second, experiments were conducted on the transverse laser cooling of a magnetically guided beam of ultra cold chromium atoms. Radial compression by a tapering of the guide is employed to adiabatically heat the beam. Inside the tapered section heat is extracted from the atom beam by a two-dimensional optical molasses perpendicular to it, resulting in a significant increase of atomic phase space density. A magnetic offset field is applied to prevent optical pumping to untrapped states. Our results demonstrate that by a suitable choice of the magnetic offset field, the cooling beam intensity and detuning, atom losses and longitudinal heating can be avoided. Final temperatures below 65 μK have been achieved, corresponding to an increase of phase space density in the guided beam by more than a factor of 30.

Indium-defect interactions in FCC and BCC metals studied using the modified embedded atom method

Energy Technology Data Exchange (ETDEWEB)

Zacate, M. O., E-mail: zacatem1@nku.edu [Northern Kentucky University, Department of Physics, Geology, and Engineering Technology (United States)

2016-12-15

With the aim of developing a transferable potential set capable of predicting defect formation, defect association, and diffusion properties in a wide range of intermetallic compounds, the present study was undertaken to test parameterization strategies for determining empirical pair-wise interaction parameters in the modified embedded atom method (MEAM) developed by Baskes and coworkers. This report focuses on indium-solute and indium-vacancy interactions in FCC and BCC metals, for which a large set of experimental data obtained from perturbed angular correlation measurements is available for comparison. Simulation results were found to be in good agreement with experimental values after model parameters had been adjusted to reproduce as best as possible the following two sets of quantities: (1) lattice parameters, formation enthalpies, and bulk moduli of hypothetical equiatomic compounds with the NaCl crystal structure determined using density functional theory and (2) dilute solution enthalpies in metals as predicted by Miedema’s semi-empirical model.

Determination of trace concentrations in indium in ultrapure materials by the method of stepped laser photoionization from the metastable 5p2P 3/2 state

International Nuclear Information System (INIS)

Beterov, I.M.; Kurochkin, V.L.; Yudelevich, I.G.

1985-01-01

Experiments have been carried out on the photoionization detection of impurity sodium and aluminum atoms by means of stepped photoionization of the atoms in a gaseous medium with laser evaporation of the sample or with an atomic beam with thermal evaporation of the material in a vacuum. Photoionization and detection of impurity atoms in a vacuum permit eliminating the background signal due to the presence of traces of impurities in the gas and quenching collisions and obtaining maximum selectivity. The use of the photoionization method for recording the intensity and elemental composition of atomic beams in molecular epitaxy processes will make it possible to perform more accurately than with other methods a continuous technological monitoring of the conditions of deposition of semiconducting devices. In this paper the authors examine the characteristic features of the photoionization detection of indium atoms in an atomic beam and they present the results of experiments of trace impurities in very pure germanium

Direct observation of indium compositional fluctuation in GaInN/GaN multi-quantum wells using an X-ray micro-beam from the 8-GeV storage ring

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro; Fuutagawa, Noriyuki [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Terada, Yasuko [Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)

2008-07-01

We measured the micrometer-scale fluctuation of the indium contents in a 50 {mu}m x 30 {mu}m region of annealed Ga{sub 0.8}In{sub 0.2}N/GaN multi quantum wells by mapping the counts of indium fluorescent X-rays excited by a 1.3 {mu}m x 3.8 {mu}m X-ray micro-beam. The mapping indicates that two distinct regions - indium-rich and indium-poor regions - are formed by the annealing. The indium contents in the island-shaped low-indium regions are 20% less than in the surrounding high-indium region. As the island-shaped low-indium regions clearly coincide with the low-radiative regions as observed by Hg-lamp-excited fluorescent microscopy, we believe that the low-radiative regions are a result not of indium segregation but of the generation of defects such as plane defects. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Determination of gold, indium, tellurium and thallium in the same sample digest of geological materials by atomic-absorption spectroscopy and two-step solvent extraction

Science.gov (United States)

Hubert, A.E.; Chao, T.T.

1985-01-01

A rock, soil, or stream-sediment sample is decomposed with hydrofluoric acid, aqua regia, and hydrobromic acid-bromine solution. Gold, thallium, indium and tellurium are separated and concentrated from the sample digest by a two-step MIBK extraction at two concentrations of hydrobromic add. Gold and thallium are first extracted from 0.1M hydrobromic acid medium, then indium and tellurium are extracted from 3M hydrobromic acid in the presence of ascorbic acid to eliminate iron interference. The elements are then determined by flame atomic-absorption spectrophotometry. The two-step solvent extraction can also be used in conjunction with electrothermal atomic-absorption methods to lower the detection limits for all four metals in geological materials. ?? 1985.

Indium determination by spectral overlappings of lines in atomic absorption spectrometry

International Nuclear Information System (INIS)

Gomez, J.J.; Huicque, L. d'; Garcia Vior, L.O.

1991-01-01

A molybdenum hollow-cathode lamp filled with neon can be used to determine indium. Characteristic concentration for this element is 4.5 mg/L in the 325 nm spectral region for the Mo(I) 325.621 nm line. In addition, values of 0.4 mg/L and 0.3 mg/L are obtained with the Mo(I) 410.215 nm and Ne(I) 451.151 nm lines, respectively. These spectral overlappings allow the determination of indium in silver-cadmium-indium alloys. (Author) [es

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

Science.gov (United States)

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

Precision atomic beam density characterization by diode laser absorption spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Oxley, Paul; Wihbey, Joseph [Physics Department, The College of the Holy Cross, Worcester, Massachusetts 01610 (United States)

2016-09-15

We provide experimental and theoretical details of a simple technique to determine absolute line-of-sight integrated atomic beam densities based on resonant laser absorption. In our experiments, a thermal lithium beam is chopped on and off while the frequency of a laser crossing the beam at right angles is scanned slowly across the resonance transition. A lock-in amplifier detects the laser absorption signal at the chop frequency from which the atomic density is determined. The accuracy of our experimental method is confirmed using the related technique of wavelength modulation spectroscopy. For beams which absorb of order 1% of the incident laser light, our measurements allow the beam density to be determined to an accuracy better than 5% and with a precision of 3% on a time scale of order 1 s. Fractional absorptions of order 10{sup −5} are detectable on a one-minute time scale when we employ a double laser beam technique which limits laser intensity noise. For a lithium beam with a thickness of 9 mm, we have measured atomic densities as low as 5 × 10{sup 4} atoms cm{sup −3}. The simplicity of our technique and the details we provide should allow our method to be easily implemented in most atomic or molecular beam apparatuses.

Precision atomic beam density characterization by diode laser absorption spectroscopy

International Nuclear Information System (INIS)

Oxley, Paul; Wihbey, Joseph

2016-01-01

We provide experimental and theoretical details of a simple technique to determine absolute line-of-sight integrated atomic beam densities based on resonant laser absorption. In our experiments, a thermal lithium beam is chopped on and off while the frequency of a laser crossing the beam at right angles is scanned slowly across the resonance transition. A lock-in amplifier detects the laser absorption signal at the chop frequency from which the atomic density is determined. The accuracy of our experimental method is confirmed using the related technique of wavelength modulation spectroscopy. For beams which absorb of order 1% of the incident laser light, our measurements allow the beam density to be determined to an accuracy better than 5% and with a precision of 3% on a time scale of order 1 s. Fractional absorptions of order 10 −5 are detectable on a one-minute time scale when we employ a double laser beam technique which limits laser intensity noise. For a lithium beam with a thickness of 9 mm, we have measured atomic densities as low as 5 × 10 4 atoms cm −3 . The simplicity of our technique and the details we provide should allow our method to be easily implemented in most atomic or molecular beam apparatuses.

Precision atomic beam density characterization by diode laser absorption spectroscopy.

Science.gov (United States)

Oxley, Paul; Wihbey, Joseph

2016-09-01

We provide experimental and theoretical details of a simple technique to determine absolute line-of-sight integrated atomic beam densities based on resonant laser absorption. In our experiments, a thermal lithium beam is chopped on and off while the frequency of a laser crossing the beam at right angles is scanned slowly across the resonance transition. A lock-in amplifier detects the laser absorption signal at the chop frequency from which the atomic density is determined. The accuracy of our experimental method is confirmed using the related technique of wavelength modulation spectroscopy. For beams which absorb of order 1% of the incident laser light, our measurements allow the beam density to be determined to an accuracy better than 5% and with a precision of 3% on a time scale of order 1 s. Fractional absorptions of order 10 -5 are detectable on a one-minute time scale when we employ a double laser beam technique which limits laser intensity noise. For a lithium beam with a thickness of 9 mm, we have measured atomic densities as low as 5 × 10 4 atoms cm -3 . The simplicity of our technique and the details we provide should allow our method to be easily implemented in most atomic or molecular beam apparatuses.

Indium tin oxide surface smoothing by gas cluster ion beam

CERN Document Server

Song, J H; Choi, W K

2002-01-01

CO sub 2 cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surfaces and thus to attain highly smooth surfaces. CO sub 2 monomer ions are also bombarded on the ITO surfaces at the same acceleration voltage to compare sputtering phenomena. From the atomic force microscope results, the irradiation of monomer ions makes the hillocks sharper and the surfaces rougher from 1.31 to 1.6 nm in roughness. On the other hand, the irradiation of CO sub 2 cluster ions reduces the height of hillocks and planarize the ITO surfaces as smooth as 0.92 nm in roughness. This discrepancy could be explained by large lateral sputtering yield of the cluster ions and re-deposition of sputtered particles by the impact of the cluster ions on surfaces.

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Synthesis and photophysical properties of indium(III) phthalocyanine derivatives

Energy Technology Data Exchange (ETDEWEB)

Özceşmeci, İbrahim, E-mail: ozcesmecii@itu.edu.tr [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gelir, Ali [Department of Physics, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gül, Ahmet [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey)

2014-03-15

Three chloroindium(III) phthalocyanine derivatives bearing four aromatic (naphthalene or pyrene) or aliphatic (hexylthio) groups were prepared from corresponding phthalonitrile compounds. The indium(III) phthalocyanine derivatives were characterized with elemental analyses, mass, proton nuclear magnetic resonance ({sup 1}H NMR), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet–visible spectroscopy (UV–vis) techniques. Quantum yields and the energy transfer from the substituents to phthalocyanine core were examined. No energy transfer was observed for 5. The energy transfer efficiency from pyrene units to indium phthalocyanine core was calculated as 0.27 for 6. Quantum yields of all samples were very small due to heavy atom effect of indium atom in the core. It was also observed that upon binding of pyrene and naphthalene units to indium phthalocyanine as substituents, the quantum yields of indium phthalocyanine parts of 5 and 6 decreased. -- Highlights: • Three chloroindium(III) phthalocyanines were prepared and characterized. • Aggregation properties of these compounds were investigated. • The energy transfer efficiency was examined. • Quantum yield of these systems were calculated.

Important atomic physics issues for ion beam fusion

International Nuclear Information System (INIS)

Bangerter, R.O.

1985-01-01

This paper suggests several current atomic physics questions important to ion beam fusion. Among the topics discussed are beam transport, beam-target interaction, and reactor design. The major part of the report is discussion concerning areas of research necessary to better understand beam-target interactions

The angular distributions of sputtered indium atoms at different temperature

International Nuclear Information System (INIS)

Zhang Jiping; Wang Zhenxia; Tao Zhenlan; Pan Jisheng

1993-01-01

The effect of temperature and surface topography on the angular distribution of indium atoms was studied under bombardment by 2T KeV Ar + ions at normal incidence. Experiments were carried out on two samples, A and B, at 25 o C and 70 o C respectively. The function Y(θ) = a cosθ + b cos n θ, where θ is the sputtering angle, was found to fit the experimental data. The term (a cos θ) corresponds to the cosine distribution predicted by random collision cascade theory, and the term (b cos n θ) is dependent on factors such as the surface topography. For sample A, a∼b, whereas for sample B a< b. The surface of A consisted of flat and pebble like regions of almost equal area while the surface of B was more cratered. An explanation of the fitting values of a,b and n is given in terms of the shielding effects of the different structures. (UK)

Coherent and non coherent atom optics experiment with an ultra-narrow beam of metastable rare gas atoms

International Nuclear Information System (INIS)

Grucker, J.

2007-12-01

In this thesis, we present a new type of atomic source: an ultra-narrow beam of metastable atoms produced by resonant metastability exchange inside a supersonic beam of rare gas atoms. We used the coherence properties of this beam to observe the diffraction of metastable helium, argon and neon atoms by a nano-transmission grating and by micro-reflection-gratings. Then, we evidenced transitions between Zeeman sublevels of neon metastable 3 P 2 state due to the quadrupolar part of Van der Waals potential. After we showed experimental proofs of the observation of this phenomenon, we calculated the transition probabilities in the Landau - Zener model. We discussed the interest of Van der Waals - Zeeman transitions for atom interferometry. Last, we described the Zeeman cooling of the supersonic metastable argon beam ( 3 P 2 ). We have succeeded in slowing down atoms to speeds below 100 m/s. We gave experimental details and showed the first time-of-flight measurements of slowed atoms

Laser ionization installation for measurement of atomic beam parameters

CERN Document Server

Tukhlibaev, O; Khalilov, E E; Alimov, U Z

2002-01-01

The design of the laser ionization installation for determination of the atomic beam intensity, density and spatial structure is described. The method of the atoms laser resonance staged photoionization is applied in the installation. The above installation consists of two lasers on the dyestuffs, the atomizer, the ionization system and the ion signals registration system. The results of studies on the spatial structure of the In atoms beam are presented. The proposed method provides for the spatial resolution at the level of 10-100 mu m

Optimization of a constrained linear monochromator design for neutral atom beams.

Science.gov (United States)

Kaltenbacher, Thomas

2016-04-01

A focused ground state, neutral atom beam, exploiting its de Broglie wavelength by means of atom optics, is used for neutral atom microscopy imaging. Employing Fresnel zone plates as a lens for these beams is a well established microscopy technique. To date, even for favorable beam source conditions a minimal focus spot size of slightly below 1μm was reached. This limitation is essentially given by the intrinsic spectral purity of the beam in combination with the chromatic aberration of the diffraction based zone plate. Therefore, it is important to enhance the monochromaticity of the beam, enabling a higher spatial resolution, preferably below 100nm. We propose to increase the monochromaticity of a neutral atom beam by means of a so-called linear monochromator set-up - a Fresnel zone plate in combination with a pinhole aperture - in order to gain more than one order of magnitude in spatial resolution. This configuration is known in X-ray microscopy and has proven to be useful, but has not been applied to neutral atom beams. The main result of this work is optimal design parameters based on models for this linear monochromator set-up followed by a second zone plate for focusing. The optimization was performed for minimizing the focal spot size and maximizing the centre line intensity at the detector position for an atom beam simultaneously. The results presented in this work are for, but not limited to, a neutral helium atom beam. Copyright © 2016 Elsevier B.V. All rights reserved.

Atomic-Beam Magnetic Resonance Experiments at ISOLDE

CERN Multimedia

2002-01-01

The aim of the atomic-beam magnetic resonance (ABMR) experiments at ISOLDE is to map the nuclear behaviour in wide regions of the nuclear chart by measuring nuclear spins and moments of ground and isomeric states. This is made through an investigation of the atomic hyperfine structure of free, neutral atoms in a thermal atomic-beam using radio-frequency techniques. On-line operation allows the study of short-lived nuclei far from the region of beta-stability.\\\\ \\\\ The ABMR experiments on the |2S^1 ^2 elements Rb, Cs, Au and Fr have been completed, and present efforts are directed towards the elements with an open p-shell and on the rare-earth elements.\\\\ \\\\ The experimental data obtained are compared with results from model calculations, giving information on the single-particle structure and on the nuclear shape parameters.

Quantum coherent tractor beam effect for atoms trapped near a nanowaveguide

Science.gov (United States)

Sadgrove, Mark; Wimberger, Sandro; Nic Chormaic, Síle

2016-01-01

We propose several schemes to realize a tractor beam effect for ultracold atoms in the vicinity of a few-mode nanowaveguide. Atoms trapped near the waveguide are transported in a direction opposite to the guided mode propagation direction. We analyse three specific examples for ultracold 23Na atoms trapped near a specific nanowaveguide (i.e. an optical nanofibre): (i) a conveyor belt-type tractor beam effect, (ii) an accelerator tractor beam effect, and (iii) a quantum coherent tractor beam effect, all of which can effectively pull atoms along the nanofibre toward the light source. This technique provides a new tool for controlling the motion of particles near nanowaveguides with potential applications in the study of particle transport and binding as well as atom interferometry. PMID:27440516

Development of a Supersonic Atomic Oxygen Nozzle Beam Source for Crossed Beam Scattering Experiments

Science.gov (United States)

Sibener, S. J.; Buss, R. J.; Lee, Y. T.

1978-05-01

A high pressure, supersonic, radio frequency discharge nozzle beam source was developed for the production of intense beams of ground state oxygen atoms. An efficient impedance matching scheme was devised for coupling the radio frequency power to the plasma as a function of both gas pressure and composition. Techniques for localizing the discharge directly behind the orifice of a water-cooled quartz nozzle were also developed. The above combine to yield an atomic oxygen beam source which produces high molecular dissociation in oxygen seeded rare gas mixtures at total pressures up to 200 torr: 80 to 90% dissociation for oxygen/argon mixtures and 60 to 70% for oxygen/helium mixtures. Atomic oxygen intensities are found to be greater than 10{sup 17} atom sr{sup -1} sec{sup -1}. A brief discussion of the reaction dynamics of 0 + IC1 ..-->.. I0 + C1 is also presented.

Fabrication, structure and mechanical properties of indium nanopillars

Energy Technology Data Exchange (ETDEWEB)

Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

2010-01-01

Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

Determination of indium in geological materials by electrothermal-atomization atomic absorption spectrometry with a tungsten-impregnated graphite furance

Science.gov (United States)

Zhou, L.; Chao, T.T.; Meier, A.L.

1984-01-01

The sample is fused with lithium metaborate and the melt is dissolved in 15% (v/v) hydrobromic acid. Iron(III) is reduced with ascorbic acid to avoid its coextraction with indium as the bromide into methyl isobutyl ketone. Impregnation of the graphite furnace with sodium tungstate, and the presence of lithium metaborate and ascorbic acid in the reaction medium improve the sensitivity and precision. The limits of determination are 0.025-16 mg kg-1 indium in the sample. For 22 geological reference samples containing more than 0.1 mg kg-1 indium, relative standard deviations ranged from 3.0 to 8.5% (average 5.7%). Recoveries of indium added to various samples ranged from 96.7 to 105.6% (average 100.2%). ?? 1984.

Auger electron spectroscopy study of surface segregation in the binary alloys copper-1 atomic percent indium, copper-2 atomic percent tin, and iron-6.55 atomic percent silicon

Science.gov (United States)

Ferrante, J.

1973-01-01

Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.

Optimization of a constrained linear monochromator design for neutral atom beams

International Nuclear Information System (INIS)

Kaltenbacher, Thomas

2016-01-01

A focused ground state, neutral atom beam, exploiting its de Broglie wavelength by means of atom optics, is used for neutral atom microscopy imaging. Employing Fresnel zone plates as a lens for these beams is a well established microscopy technique. To date, even for favorable beam source conditions a minimal focus spot size of slightly below 1 μm was reached. This limitation is essentially given by the intrinsic spectral purity of the beam in combination with the chromatic aberration of the diffraction based zone plate. Therefore, it is important to enhance the monochromaticity of the beam, enabling a higher spatial resolution, preferably below 100 nm. We propose to increase the monochromaticity of a neutral atom beam by means of a so-called linear monochromator set-up – a Fresnel zone plate in combination with a pinhole aperture – in order to gain more than one order of magnitude in spatial resolution. This configuration is known in X-ray microscopy and has proven to be useful, but has not been applied to neutral atom beams. The main result of this work is optimal design parameters based on models for this linear monochromator set-up followed by a second zone plate for focusing. The optimization was performed for minimizing the focal spot size and maximizing the centre line intensity at the detector position for an atom beam simultaneously. The results presented in this work are for, but not limited to, a neutral helium atom beam. - Highlights: • The presented results are essential for optimal operation conditions of a neutral atom microscope set-up. • The key parameters for the experimental arrangement of a neutral microscopy set-up are identified and their interplay is quantified. • Insights in the multidimensional problem provide deep and crucial understanding for pushing beyond the apparent focus limitations. • This work points out the trade-offs for high intensity and high spatial resolution indicating several use cases.

Optimization of a constrained linear monochromator design for neutral atom beams

Energy Technology Data Exchange (ETDEWEB)

Kaltenbacher, Thomas

2016-04-15

A focused ground state, neutral atom beam, exploiting its de Broglie wavelength by means of atom optics, is used for neutral atom microscopy imaging. Employing Fresnel zone plates as a lens for these beams is a well established microscopy technique. To date, even for favorable beam source conditions a minimal focus spot size of slightly below 1 μm was reached. This limitation is essentially given by the intrinsic spectral purity of the beam in combination with the chromatic aberration of the diffraction based zone plate. Therefore, it is important to enhance the monochromaticity of the beam, enabling a higher spatial resolution, preferably below 100 nm. We propose to increase the monochromaticity of a neutral atom beam by means of a so-called linear monochromator set-up – a Fresnel zone plate in combination with a pinhole aperture – in order to gain more than one order of magnitude in spatial resolution. This configuration is known in X-ray microscopy and has proven to be useful, but has not been applied to neutral atom beams. The main result of this work is optimal design parameters based on models for this linear monochromator set-up followed by a second zone plate for focusing. The optimization was performed for minimizing the focal spot size and maximizing the centre line intensity at the detector position for an atom beam simultaneously. The results presented in this work are for, but not limited to, a neutral helium atom beam. - Highlights: • The presented results are essential for optimal operation conditions of a neutral atom microscope set-up. • The key parameters for the experimental arrangement of a neutral microscopy set-up are identified and their interplay is quantified. • Insights in the multidimensional problem provide deep and crucial understanding for pushing beyond the apparent focus limitations. • This work points out the trade-offs for high intensity and high spatial resolution indicating several use cases.

Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

Science.gov (United States)

Continetti, R. E.; Balko, B. A.; Lee, Y. T.

1989-02-01

A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

Molecular beam studies of hot atom chemical reactions: Reactive scattering of energetic deuterium atoms

International Nuclear Information System (INIS)

Continetti, R.E.; Balko, B.A.; Lee, Y.T.

1989-02-01

A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H 2 /minus/> DH + H and the substitution reaction D + C 2 H 2 /minus/> C 2 HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible. 18 refs., 9 figs

Optimization of atomic beam sources for polarization experiments

Energy Technology Data Exchange (ETDEWEB)

Gaisser, Martin; Nass, Alexander; Stroeher, Hans [IKP, Forschungszentrum Juelich (Germany)

2013-07-01

For experiments with spin-polarized protons and neutrons a dense target is required. In current atomic beam sources an atomic hydrogen or deuterium beam is expanded through a cold nozzle and a system of sextupole magnets and RF-transition units selects a certain hyperfine state. The achievable flux seems to be limited to about 10{sup 17} particles per second with a high nuclear polarization. A lot of experimental and theoretical effort has been undertaken to understand all effects and to increase the flux. However, improvements have remained marginal. Now, a Monte Carlo simulation based on the DSMC part of the open source C++ library OpenFOAM is set up in order to get a better understanding of the flow and to optimize the various elements. It is intended to include important effects like deflection from magnetic fields, recombination on the walls and spin exchange collisions in the simulation and make quantitative predictions of changes in the experimental setup. The goal is to get a tool that helps to further increase the output of an atomic beam source. So far, a new binary collision model, magnetic fields, RF-transition units and a tool to measure the collision age are included. The next step will be to couple the whole simulation with an optimization algorithm implementing Adaptive Simulated Annealing (ASA) in order to automatically optimize the atomic beam source.

Laser optical pumping of sodium and lithium atom beams

International Nuclear Information System (INIS)

Cusma, J.T.

1983-01-01

The method of optical pumping with a continuous wave dye laser has been used to produce beams of polarized 23 Na atoms and polarized 6 Li atoms. Optical pumping of a 23 Na atom beam using either a multimode dye laser or a single frequency dye laser with a double passed acousto-optic modulator results in electron spin polarizations of 0.70-0.90 and nuclear spin polarizations of 0.75-0.90. Optical pumping of a 6 Li atom beam using a single frequency dye laser either with an acousto-optic modulator or with Doppler shift pumping results in electron spin polarizations of 0.77-0.95 and nuclear spin polarizations greater than 0.90. The polarization of the atom beam is measured using either the laser induced fluorescence in an intermediate magnetic field or a 6-pole magnet to determine the occupation probabilities of the ground hyperfine sublevels following optical pumping. The results of the laser optical pumping experiments agree with the results of a rate equation analysis of the optical pumping process which predicts that nearly all atoms are transferred into a single sublevel for our values of laser intensity and interaction time. The use of laser optical pumping in a polarized ion source for nuclear scattering experiments is discussed. The laser optical pumping method provides a means of constructing an intense source of polarized Li and Na ions

Characterization of a 5-eV neutral atomic oxygen beam facility

Science.gov (United States)

Vaughn, J. A.; Linton, R. C.; Carruth, M. R., Jr.; Whitaker, A. F.; Cuthbertson, J. W.; Langer, W. D.; Motley, R. W.

1991-01-01

An experimental effort to characterize an existing 5-eV neutral atomic oxygen beam facility being developed at Princeton Plasma Physics Laboratory is described. This characterization effort includes atomic oxygen flux and flux distribution measurements using a catalytic probe, energy determination using a commercially designed quadrupole mass spectrometer (QMS), and the exposure of oxygen-sensitive materials in this beam facility. Also, comparisons were drawn between the reaction efficiencies of materials exposed in plasma ashers, and the reaction efficiencies previously estimated from space flight experiments. The results of this study show that the beam facility is capable of producing a directional beam of neutral atomic oxygen atoms with the needed flux and energy to simulate low Earth orbit (LEO) conditions for real time accelerated testing. The flux distribution in this facility is uniform to +/- 6 percent of the peak flux over a beam diameter of 6 cm.

The CERN polarized atomic hydrogen beam target project

International Nuclear Information System (INIS)

Kubischta, W.; Dick, L.

1990-01-01

The UA6-experiment at the CERN p bar p Colider is at present using an unpolarized hydrogen cluster target with a thickness up to 5.10 14 atoms/cm 2 . It is planned to replace this target by a polarized atomic hydrogen beam target with a thickness up to about 10 13 atoms/cm 2 . This paper discusses basic requirements and results of atom optical calculations

Collisional effects on metastable atom population in vapour generated by electron beam heating

International Nuclear Information System (INIS)

Dikshit, B; Majumder, A; Bhatia, M S; Mago, V K

2008-01-01

The metastable atom population distribution in a free expanding uranium vapour generated by electron beam (e-beam) heating is expected to depart from its original value near the source due to atom-atom collisions and interaction with electrons of the e-beam generated plasma co-expanding with the vapour. To investigate the dynamics of the electron-atom and atom-atom interactions at different e-beam powers (or source temperatures), probing of the atomic population in ground (0 cm -1 ) and 620 cm -1 metastable states of uranium was carried out by the absorption technique using a hollow cathode discharge lamp. The excitation temperature of vapour at a distance ∼30 cm from the source was calculated on the basis of the measured ratio of populations in 620 to 0 cm -1 states and it was found to be much lower than both the source temperature and estimated translational temperature of the vapour that is cooled by adiabatic free expansion. This indicated relaxation of the metastable atoms by collisions with low energy plasma electrons was so significant that it brings the excitation temperature below the translational temperature of the vapour. So, with increase in e-beam power and hence atom density, frequent atom-atom collisions are expected to establish equilibrium between the excitation and translational temperatures, resulting in an increase in the excitation temperature (i.e. heating of vapour). This has been confirmed by analysing the experimentally observed growth pattern of the curve for excitation temperature with e-beam power. From the observed excitation temperature at low e-beam power when atom-atom collisions can be neglected, the total de-excitation cross section for relaxation of the 620 cm -1 state by interaction with low energy electrons was estimated and was found to be ∼10 -14 cm 2 . Finally using this value of cross section, the extent of excitational cooling and heating by electron-atom and atom-atom collisions are described at higher e-beam powers

Cold atomic beams of high brightness

International Nuclear Information System (INIS)

Rozhdestvensky, Yu V

2004-01-01

The possibility is studied for obtaining intense cold atomic beams by using the Renyi entropy to optimise the laser cooling process. It is shown in the case of a Gaussian velocity distribution of atoms, the Renyi entropy coincides with the density of particles in the phase space. The optimisation procedure for cooling atoms by resonance optical radiation is described, which is based on the thermodynamic law of increasing the Renyi entropy in time. Our method is compared with the known methods for increasing the laser cooling efficiency such as the tuning of a laser frequency in time and a change of the atomic transition frequency in an inhomogeneous transverse field of a magnetic solenoid. (laser cooling)

Optically pumped polarized alkali atomic beams and targets

International Nuclear Information System (INIS)

Anderson, L.W.

1984-01-01

The optical pumping of 23 Na and 6 Li atomic beams is discussed. Experiments on the optical pumping of 23 Na atomic beams using either a single mode dye laser followed by a double passed acousto-optic modulator or a multimode dye laser are reported. The optical pumping of a 23 Na vapor target for use in a polarized H - ion source is discussed. Results on the use of viton as a wall coating with a long relaxation time are reported. 31 references, 6 figures, 3 tables

The effect of atoms excited by electron beam on metal evaporation

CERN Document Server

Xie Guo Feng; Ying Chun Tong

2002-01-01

In atomic vapor laser isotope separation (AVLIS), the metal is heated to melt by electron beams. The vapor atoms may be excited by electrons when flying through the electron beam. The excited atoms may be deexcited by inelastic collision during expansion. The electronic energy transfers translational energy. In order to analyse the effect of reaction between atoms and electron beams on vapor physical parameters, such as density, velocity and temperature, direct-simulation Monte Carlo method (DSMC) is used to simulate the 2-D gadolinium evaporation from long and narrow crucible. The simulation results show that the velocity and temperature of vapor increase, and the density decreases

A double-stage pulsed discharge fluorine atom beam source

International Nuclear Information System (INIS)

Ren Zefeng; Qiu Minghui; Che Li; Dai Dongxu; Wang Xiuyan; Yang Xueming

2006-01-01

Molecular-beam intensity and speed ratio are two major limiting factors in many molecular-beam experiments. This article reports a high-intensity, high-speed-ratio, pulsed supersonic fluorine atom beam source using a double-stage discharge beam source. Its performance is indicated by the high-resolution time-of-flight spectrum in the crossed beam experiment of F( 2 P)+para-H 2

To test photon statistics by atomic beam deflection

International Nuclear Information System (INIS)

Wang Yuzhu; Chen Yudan; Huang Weigang; Liu Liang

1985-02-01

There exists a simple relation between the photon statistics in resonance fluorescence and the statistics of the momentum transferred to an atom by a plane travelling wave [Cook, R.J., Opt. Commun., 35, 347(1980)]. Using an atomic beam deflection by light pressure, we have observed sub-Poissonian statistics in resonance fluorescence of two-level atoms. (author)

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

Science.gov (United States)

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Modified source of a fast neutral atom beam with a controlled energy

International Nuclear Information System (INIS)

Gostev, V.A.; Elakhovskij, D.V.; Khakhaev, A.D.

1980-01-01

A source of a metastable helium atom beam with a controlled energy based on a phenomenon of resonant ion neutralization on the surface of a solid body is described. The neutral particle energy control is carried out by changing ion velocities before their transformation into metastable atoms. The results of experiments with a modified construction of atomic beam source are stated. These experiments were conducted to find the possibilities to control velocities of atoms in a flow as well as to elucidate the peculiarities of operation of a collimator-converter of this construction. Dependences of a halfwidth of the ion velocity distribution function on the ion source parameters have been investigated. The possibility for particle energy control in a collimated flow of fast neutral. atoms has been experimentally shown, it is also shown that a mean value of atom energy in a beam coincides with a value of mean energy of ions from which atoms are produced by the resonant neutralization method; the construction of the source provides the possibility to realize the method of ''overtaking beams'' for neutral atoms and as a result of this to give a possibility for studying atom-atom collisions in a wide energy range at relatively high densities of flows

Optimization of atomic beam sources for polarization experiments

Energy Technology Data Exchange (ETDEWEB)

Gaisser, Martin; Nass, Alexander; Stroeher, Hans [IKP, Forschungszentrum Juelich (Germany)

2012-07-01

For experiments with spinpolarized protons and neutrons a dense target is required. In current atomic beam sources an atomic hydrogen or deuterium beam is expanded through a cold nozzle and a system of sextupole magnets and RF-transition units selects a certain hyperfine state. The achievable flux seems to be limited to about 10{sup 17} particles per second with a high nuclear polarization. A lot of experimental and theoretical effort has been undertaken to understand all effects and to increase the flux. However, improvements have remained marginal. Now, a Monte Carlo simulation based on the DSMC part of the open source C++ library OpenFOAM is set up in order to get a better understanding of the flow and to optimize the various elements. The goal is to include important effects like deflection from a magnetic field, recombination on the walls and spin exchange collisions in the simulation and make quantitative predictions of changes in the experimental setup. The goal is to get a tool that helps to further increase the output of an atomic beam source.

Cell micro-patterning by atom beam exposure

International Nuclear Information System (INIS)

Adachi, Taiji; Kajita, Fumiaki; Sato, Katsuya; Matsumoto, Koshi; Tagawa, Masahiro

2003-01-01

This study aimed to develop a new cell micro-patterning method by controlling material surface affinity of the cell using atomic oxygen beam exposure. Surfaces of low-density polyethylene (LDPE) and tetrafluoroethylene-hexafluoropropylene (FEP) were exposed to the atomic oxygen beam. On the LDPE surface, the roughness measured by atomic force microscopy (AFM) did not change much, however, the oxygen concentration on the surface measured by X-ray photoelectron spectroscopy (XPS) significantly increased that resulted in increase in wettability. Contrary to this, on the FEP surface, the oxygen concentration showed no significant change, but roughness of the surface remarkably increased and the wettability decreased. As a result of the surface modification, affinity of the osteoblastic cells on the FEP surface increased, which was also confirmed by increase in the cell area. Finally, cell micro-patterning on the FEP surface was carried out based on difference in the affinity between modified and unmodified surfaces patterned by masking method. (author)

Relative-velocity distributions for two effusive atomic beams in counterpropagating and crossed-beam geometries

DEFF Research Database (Denmark)

Pedersen, Jens Olaf Pepke

2012-01-01

Formulas are presented for calculating the relative velocity distributions in effusive, orthogonal crossed beams and in effusive, counterpropagating beams experiments, which are two important geometries for the study of collision processes between atoms. In addition formulas for the distributions...

Particle beam technology for control of atomic-bonding state in materials

Energy Technology Data Exchange (ETDEWEB)

Ishikawa, Junzo [Kyoto Univ. (Japan). Faculty of Engineering

1997-03-01

The atomic-bonding state in materials can be controlled through `kinetic bonding` process by energetic particle beams which have a sufficient atomic kinetic energy. In order to clarify the `kinetic bonding` process the negative-ion beam deposition is considered as an ideal method because the negative ion has no additional active energies. Sputter type heavy negative-ion sources can be used for this purpose. Carbon films prepared by carbon negative-ion beam deposition have a strong dependency of the film properties on ion beam kinetic energy and have a quite high thermal conductivity which is comparable to that of the IIb diamond at a kinetic energy of 50-100 eV/atom. It suggests that new or metastable materials could be formed through the `kinetic bonding` process. Negative-ion beams can also be used for ion implantation, in which charging problems are perfectly reduced. (author)

State of rare earth impurities in gallium and indium antimonides

International Nuclear Information System (INIS)

Evgen'ev, S.B.; Kuz'micheva, G.M.

1990-01-01

State of rare earth impurities in indium and gallium antimonides was studied. Results of measuring density and lattice parameter of samples in GaSb-rare earth and InSb-rare earth systems are presented. It is shown that during rare earth dissolution in indium and gallium antimonides rare earth atoms occupy interstitial positions or, at least, are displaced from lattice points

Neutral atom beam technique enhances bioactivity of PEEK

International Nuclear Information System (INIS)

Khoury, Joseph; Kirkpatrick, Sean R.; Maxwell, Melissa; Cherian, Raymond E.; Kirkpatrick, Allen; Svrluga, Richard C.

2013-01-01

Polyetheretherketone (PEEK) is currently gaining popularity in orthopedic and spinal applications but has potential drawbacks in use. PEEK is biocompatible, similar in elasticity to bone, and radiolucent; however, it has been shown to be inert and does not integrate well with bone. Recent efforts have focused on increasing the bioactivity of PEEK by modifying the surface to improve the bone-implant interface. We have employed a novel Accelerated Neutral Atom Beam technique (ANAB) to enhance the bioactivity of PEEK. ANAB employs an intense beam of cluster-like packets of accelerated unbonded neutral argon (Ar) gas atoms. These beams are created by first producing a highly energetic Gas Cluster Ion Beam (GCIB) comprised of van der Waals bonded Ar atoms, then transferring energy to the clusters so as to cause release of most of the interatomic bonds, and finally deflecting away the remaining electrically charged cluster cores of still bonded atoms. We identified that ANAB treatment of PEEK results in nanometer scale surface modifications as well as increased surface hydrophilicity. Human osteoblasts seeded onto the surface of ANAB-treated PEEK exhibited enhanced growth as compared to control PEEK as evidenced by cell proliferation assays and microscopy. This increase in bioactivity resulted in cell proliferation levels comparable to native titanium. An in vivo study using a rat calvarial critical size defect model revealed enhanced osseointegration where bone tissue formation was evident only on the ANAB treated PEEK. Taken together, these data suggest that ANAB treatment of PEEK has the potential to enhance its bioactivity, resulting in bone formation and significantly decreasing osseointegration time of orthopedic and spinal implants

First-principles analysis of structural and opto-electronic properties of indium tin oxide

Science.gov (United States)

Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-05-01

Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

Determination of frequencies of atomic oscillations along the fourth order symmetry axis in indium arsenide according to thermal diffusion scattering of X-rays

International Nuclear Information System (INIS)

Orlova, N.S.

1978-01-01

Intensity of diffusion scattering of X-rays from the plane of a monocrystal of indium arsenide has been measured on the monochromatized CuKsub(α)-radiation. The samples are made of Cl indium arsenide monocrystal of the n-type with the 1x10 18 cm -3 concentration of carriers in the form of a plate with the polished parallel cut-off with the +-5' accuracy. The investigations have been carried out on the URS-5 IM X-ray diffractometer at room temperature in vacuum. Intensities of thermal diffusion scattering of the second order have been calculated by the two-atomic chain model with different mass and four interaction paramaters. Based upon the analysis of intensity of single-phonon diffusion scattering the curves of frequencies of atomic oscillations along the direction [100] have been determined. The values of frequencies obtained experimentally on the thermal diffusion scattering of X-rays are in a satisfactory agreement with the calculated data. The frequencies obtained are compared with the results of calculation and the analysis of multiphonon spectra of IR-absorption made elsewhere

Thermal expansion and volumetric changes during indium phosphide melting

International Nuclear Information System (INIS)

Glazov, V.M.; Davletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

1977-01-01

The results of the measurements of a thermal expansion were summed up at various temperatures as a diagram in coordinates (Δ 1/1) approximately F(t). It was shown that an appreciable deviation of the relationship (Δ1/1) approximately f(t) from the linear law corresponded to a temperature of 500-550 deg C. It was noted that the said deviation was related to an appreciable thermal decomposition of indium phosphide as temperature increased. The strength of the inter-atomic bond of indium phosphide was calculated. Investigated were the volumetric changes of indium phosphide on melting. The resultant data were analyzed with the aid of the Clausius-Clapeyron equation

Manipulating beams of ultra-cold atoms with a static magnetic field

International Nuclear Information System (INIS)

Rowlands, W.J.; Lau, D.C.; Opat, G.I.; Sidorov, A.I.; McLean, R.J.; Hannaford, P.

1996-01-01

The preliminary results on the deflection of a beam of ultra-cold atoms by a static magnetic field are presented. Caesium atoms trapped in a magneto-optical trap (MOT) are cooled using optical molasses, and then fall freely under gravity to form a beam of ultra-cold atoms. The atoms pass through a static inhomogeneous magnetic field produced by a single current-carrying wire, and are deflected by a force dependent on the magnetic substate of the atom. A schematical diagram of the experimental layout for laser trapping and cooling of cesium atom is given. The population of atoms in various magnetic substates can be altered by using resonant laser radiation to optically pump the atoms. The single-wire deflection experiment described can be considered as atomic reflexion from a cylindrical magnetic mirror; the underlying principles and techniques being relevant to the production of atomic mirrors and diffraction gratings. 16 refs., 10 figs

The steady-state and time-resolved photophysical properties of a dimeric indium phthalocyanine complex

International Nuclear Information System (INIS)

Chen Yu; Araki, Yasuyuki; Dini, Danilo; Liu Ying; Ito, Osamu; Fujitsuka, Mamoru

2006-01-01

The steady-state and time-resolved photophysical properties and some molecular orbital calculation results of a dimeric indium phthalocyanine complex with an indium-indium bond, i.e., [tBu 4 PcIn] 2 .2tmed, have been described. The results regarding triplet excited state lifetimes can be ascribed to strong intramolecular interactions existing only in the excited state of this dimer because no significant difference in the absorption spectra of the tBu 4 PcInCl monomer and the [tBu 4 PcIn] 2 .2tmed dimer is observed, suggesting that no ground-state interaction can be assessed. The deactivation processes of the excited singlet state of [tBu 4 PcIn] 2 .2tmed are apparently faster than that of μ-oxo-bridged PcIn dimer [tBu 4 PcIn] 2 O. Molecular orbital calculation on the PcIn dimer shows no node between two indium atoms was found in the HOMO - 2 of the PcIn-InPc dimer, suggesting that bonding electrons distribute between two indium atoms

Design and performance of a high intensity copper atom beam source nozzle for use in inelastic atom--atom collision experiments

International Nuclear Information System (INIS)

Santavicca, D.A.

1975-01-01

The research was aimed at developing a neutral copper atom beam source which could be used to study the collision cross sections for electronic excitation of neutral copper atoms in collision with neutral argon atoms. Of particular interest is the excitation from the ground state to the two upper laser levels at 3.80 and 3.82 electron volts

Atomic beam formed by the vaporization of a high velocity pellet

International Nuclear Information System (INIS)

Foster, C.A.; Hendricks, C.D.

1974-01-01

A description of an atomic beam formed by vaporizing an electrostatically accelerated high velocity pellet is given. Uniformly sized droplets of neon will be formed by the mechanical disintegration of liquid jet and frozen by adiabatic vaporization in vacuum. The pellets produced will be charged and accelerated by contacting a needle held at high potential. The accelerated pellets will be vaporized forming a pulse of mono-energetic atoms. The advantages are that a wide range of energies will be possible. The beam will be mono-energetic. The beam is inheretly pulsed, allowing a detailed time of flight velocity distribution measurement. The beam will have a high instantaneous intensity. The beam will be able to operate into an ultra high vacuum chamber

On-line spectroscopy with thermal atomic beams

International Nuclear Information System (INIS)

Thibault, C.; Guimbal, P.; Klapisch, R.; Saint Simon, M. de; Serre, J.M.; Touchard, F.; Duong, H.T.; Jacquinot, P.; Juncar, P.

1981-01-01

On-line high resolution laser spectroscopy experiments have been performed in which the light from a cw tunable dye laser interacts at right angles with a thermal atomic beam. sup(76-98)Rb, sup(118-145)Cs and sup(208-213)Fr have been studied using the ionic beam delivered by the ISOLDE on-line mass separator at CERN while sup(20-31)Na and sup(38-47)K have been studied by setting the apparaturs directly on-line with the PS 20 GeV proton beam. The principle of the method is briefly explained and some results concerning nuclear structure are given. (orig.)

Molecular beam studies and hot atom chemistry

International Nuclear Information System (INIS)

Continetti, R.E.; Lee, Y.T.

1993-01-01

The application of the crossed molecular beam technique to the study of hot atom chemistry has provided significant insights into the dynamics of hot atom reaction. To illustrate this, two recent studies are discussed. Those are the study on the influence of translational energy in 0.6 to 1.5 eV range on endoergic reaction, and the experimental study on the detailed dynamics of elementary reaction at translational energy of 0.53 and 1.01 eV. The first example illustrates the contribution that molecular beam experiment can make in the understanding of the dynamics of endoergic substitution reaction. The second example illustrates the role that such studies can play in evaluating exact three-dimensional quantum scattering calculation and ab initio potential energy surfaces for chemical reaction. In the case of endoergic reaction of halogen substitution, it was observed that the reactive collision involved short lived collision complexes. It is suggested that energetic effect alone cannot account for the difference in cross sections, and dynamic effect most play a large role. In atom-diatom reaction, the differential cross section measurement of D+H 2 →DH+H reaction was carried out, and the results are discussed. (K.I.)

Chemical composition of cadmium selenochromite crystals doped with indium, silver and gallium

International Nuclear Information System (INIS)

Bel'skij, N.K.; Ochertyanova, L.I.; Shabunina, G.G.; Aminov, T.G.

1985-01-01

The high accuracy chemical analysis Which allows one to observe doping effect on the cadmium selenochromite crystal composition is performed. The problem on the possibility of impurity atom substitution for basic element is considered on the basis of data of atomic-absorption analysis of doped crystals. The crystals of cadmium selenochromite doped with indium by chromium to cadmium ratio are distributed into two groups and probably two types of substitution take place. At 0.08-1.5 at.% indium concentrations the Cr/Cd ratio >2. One can assume that indium preferably takes cadmium tetrahedral positions whereas at 1.5-2.5 at. % concentrations the Cr/Cd ratio =2 and cadmium is substituted for silver which does not contradict crystallochemical and physical properties of this compound. In crystals with gallium the Cr/Cd ratio <2. Gallium preferably substitutes chromium

Isotope separation by laser deflection of an atomic beam

International Nuclear Information System (INIS)

Bernhardt, A.F.

1975-02-01

Separation of isotopes of barium was accomplished by laser deflection of a single isotopic component of an atomic beam. With a tunable narrow linewidth dye laser, small differences in absorption frequency of different barium isotopes on the 6s 2 1 S 0 --6s6p 1 P 1 5536A resonance were exploited to deflect atoms of a single isotopic component of an atomic beam through an angle large enough to physically separate them from the atomic beam. It is shown that the principal limitation on separation efficiency, the fraction of the desired isotopic component which can be separated, is determined by the branching ratio from the excited state into metastable states. The isotopic purity of the separated atoms was measured to be in excess of 0.9, limited only by instrumental uncertainty. To improve the efficiency of separation, a second dye laser was employed to excite atoms which had decayed to the 6s5d metastable state into the 6p5d 1 P 1 state from which they could decay to the ground state and continue to be deflected on the 5535A transition. With the addition of the second laser, separation efficiency of greater than 83 percent was achieved, limited by metastable state accumulation in the 5d 2 1 D 2 state which is accessible from the 6p5d 1 P 1 level. It was found that the decay rate from the 6p5d state into the 5d 2 metastable state was fully 2/3 the decay rate to the ground state, corresponding to an oscillator strength of 0.58. (U.S.)

Site control technique for quantum dots using electron beam induced deposition

Energy Technology Data Exchange (ETDEWEB)

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

2014-05-15

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

Site control technique for quantum dots using electron beam induced deposition

International Nuclear Information System (INIS)

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

2014-01-01

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

Hydrothermal synthesis of two layered indium oxalates with 12-membered apertures

International Nuclear Information System (INIS)

Chen Zhenxia; Zhou Yaming; Weng Linhong; Zhang Haoyu; Zhao Dongyuan

2003-01-01

Two layered indium oxalates, In(C 2 O 4 ) 2.5 (C 3 N 2 H 12 )(H 2 O) 3 , I, and In(C 2 O 4 ) 1.5 (H 2 O) 3 , II, have been hydrothermally synthesized. In I, the linkage between indium and oxalate units gives rise to a sheet with a rectangular 12-membered aperture (six indium atoms and six oxalate units). Indium atom of II has an unusual pentagonal bipyramidal coordination arrangement. The connectivity between indium and oxalate units forms a neutral puckered layer with 12- (along a-axis) and eight-membered (along b-axis) apertures. Crystal data for these two indium oxalates are as follows: I, triclinic, space group: P-1 (No. 2), a=8.725(3) A, b=9.170(3) A, c=9.901(3) A, α=98.101(4) deg. , β=97.068(4) deg. , γ=102.403(4) deg. , V=756.3(4) A 3 , Z=2, M=463.0(5), ρ calc =2.042 g/cm 3 , R 1 =0.0377, wR 2 =0.0834. II, monoclinic, space group: P2 1 /c (No. 14), a=10.203(5) A, b=6.638(1) A, c=11.152(7) A, β=95.649(4) deg. , V=751.7(4)A 3 , Z=4, M=300.9(0), ρ calc =2.659 g/cm 3 , R 1 =0.0229, wR 2 =0.0488. TG analyses indicate the water molecules of I can be removed at 150 deg. C. The dehydrated product retains structural integrity

Matrix isolation sublimation: An apparatus for producing cryogenic beams of atoms and molecules

Energy Technology Data Exchange (ETDEWEB)

Sacramento, R. L.; Alves, B. X.; Silva, B. A.; Wolff, W.; Cesar, C. L. [Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, RJ (Brazil); Oliveira, A. N. [Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, RJ (Brazil); INMETRO, Av. Nossa Senhora das Graças, 50 25250-020 Duque de Caxias, RJ (Brazil); Li, M. S. [Instituto de Física de São Carlos, Universidade de São Paulo, Ave. Trabalhador São Carlense, 400, 13565-590 São Carlos, SP (Brazil)

2015-07-15

We describe the apparatus to generate cryogenic beams of atoms and molecules based on matrix isolation sublimation. Isolation matrices of Ne and H{sub 2} are hosts for atomic and molecular species which are sublimated into vacuum at cryogenic temperatures. The resulting cryogenic beams are used for high-resolution laser spectroscopy. The technique also aims at loading atomic and molecular traps.

Accelerator-based atomic physics experiments with photon and ion beams

International Nuclear Information System (INIS)

Johnson, B.M.; Jones, K.W.; Meron, M.

1984-01-01

Accelerator-based atomic physics experiments at Brookhaven presently use heavy-ion beams from the Dual MP Tandem Van de Graaff Accelerator Facility for atomic physics experiments of several types. Work is presently in progress to develop experiments which will use the intense photon beams which will be available in the near future from the ultraviolet (uv) and x-ray rings of the National Synchrotron Light Source (NSLS). Plans are described for experiments at the NSLS and an exciting development in instrumentation for heavy-ion experiments is summarized

Ice and Atoms: experiments with laboratory-based positron beams

International Nuclear Information System (INIS)

Coleman, P G

2011-01-01

This short review presents results of new positron and positronium (Ps) experiments in condensed matter and atomic physics, as an illustration of the satisfying variety of scientific endeavours involving positron beams which can be pursued with relatively simple apparatus in a university laboratory environment. The first of these two studies - on ice films - is an example of how positrons and Ps can provide new insights into an important system which has been widely interrogated by other techniques. The second is an example of how simple positron beam systems can still provide interesting information - here on a current interesting fundamental problem in positron atomic physics.

Two-step resonance ionization spectroscopy of Na atomic beam using cw and pulsed lasers

International Nuclear Information System (INIS)

Katsuragawa, H.; Minowa, T.; Shimazu, M.

1988-01-01

Two-step photoionization of sodium atomic beam has been carried out using a cw and a pulsed dye lasers. Sodium ions have been detected by a time of flight method in order to reduce background noise. With a proper power of the pulsed dye laser the sodium atomic beam has been irradiated by a resonant cw dye laser. The density of the sodium atomic beam is estimated to be 10 3 cm -3 at the ionization area. (author)

Intensity-gradient induced Sisyphus cooling of a single atom in a localized hollow-beam trap

International Nuclear Information System (INIS)

Yin, Yaling; Xia, Yong; Ren, Ruimin; Du, Xiangli; Yin, Jianping

2015-01-01

In order to realize a convenient and efficient laser cooling of a single atom, we propose a simple and promising scheme to cool a single neutral atom in a blue-detuned localized hollow-beam trap by intensity-gradient induced Sisyphus cooling, and study the dynamic process of the intensity-gradient cooling of a single 87 Rb atom in the localized hollow-beam trap by using Monte-Carlo simulations. Our study shows that a single 87 Rb atom with a temperature of 120 μK from a magneto-optical trap (MOT) can be directly cooled to a final temperature of 4.64 μK in our proposed scheme. We also investigate the dependences of the cooling results on the laser detuning δ of the localized hollow-beam, the power RP 0 of the re-pumping laser beam, the sizes of both the localized hollow-beam and the re-pumping beam, and find that there is a pair of optimal cooling parameters (δ and RP 0 ) for an expected lowest temperature, and the cooling results strongly depend on the size of the re-pumping beam, but weakly depend on the size of the localized hollow-beam. Finally, we further study the cooling potential of our localized hollow-beam trap for the initial temperature of a single atom, and find that a single 87 Rb atom with an initial temperature of higher than 1 mK can also be cooled directly to about 6.6 μK. (paper)

Generation of a cold pulsed beam of Rb atoms by transfer from a 3D magneto-optic trap

Energy Technology Data Exchange (ETDEWEB)

Chanu, Sapam Ranjita; Rathod, Ketan D.; Natarajan, Vasant, E-mail: vasant@physics.iisc.ernet.in

2016-08-26

We demonstrate a technique for producing a cold pulsed beam of atoms by transferring a cloud of atoms trapped in a three dimensional magneto-optic trap (MOT). The MOT is loaded by heating a getter source of Rb atoms. We show that it is advantageous to transfer with two beams (with a small angle between them) compared to a single beam, because the atoms stop interacting with the beams in the two-beam technique, which results in a Gaussian velocity distribution. The atoms are further cooled in optical molasses by turning off the MOT magnetic field before the transfer beams are turned on. - Highlights: • Getter-source loaded magneto-optic trap (MOT). • Cold atomic beam generated by deflection from the MOT. • Use of two inclined beams for deflection.

Method for producing uranium atomic beam source

International Nuclear Information System (INIS)

Krikorian, O.H.

1976-01-01

A method is described for producing a beam of neutral uranium atoms by vaporizing uranium from a compound UM/sub x/ heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared with that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe 2 . An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced

Positron beam study of indium tin oxide films on GaN

International Nuclear Information System (INIS)

Cheung, C K; Wang, R X; Beling, C D; Djurisic, A B; Fung, S

2007-01-01

Variable energy Doppler broadening spectroscopy has been used to study open-volume defects formed during the fabrication of indium tin oxide (ITO) thin films grown by electron-beam evaporation on n-GaN. The films were prepared at room temperature, 200 and 300 deg. C without oxygen and at 200 deg. C under different oxygen partial pressures. The results show that at elevated growth temperatures the ITO has fewer open volume sites and grows with a more crystalline structure. High temperature growth, however, is not sufficient in itself to remove open volume defects at the ITO/GaN interface. Growth under elevated temperature and under partial pressure of oxygen is found to further reduce the vacancy type defects associated with the ITO film, thus improving the quality of the film. Oxygen partial pressures of 6 x 10 -3 mbar and above are found to remove open volume defects associated with the ITO/GaN interface. The study suggests that, irrespective of growth temperature and oxygen partial pressure, there is only one type of defect in the ITO responsible for trapping positrons, which we tentatively attribute to the oxygen vacancy

Optimized coupling of cold atoms into a fiber using a blue-detuned hollow-beam funnel

Energy Technology Data Exchange (ETDEWEB)

Poulin, Jerome; Light, Philip S.; Kashyap, Raman; Luiten, Andre N. [Frequency Standards and Metrology Group, School of Physics, University of Western Australia, Western Australia 6009, Perth (Australia); Department of Engineering Physics, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada H3C 3A7 (Canada); Frequency Standards and Metrology, School of Physics, University of Western Australia, Western Australia 6009, Perth (Australia)

2011-11-15

We theoretically investigate the process of coupling cold atoms into the core of a hollow-core photonic-crystal optical fiber using a blue-detuned Laguerre-Gaussian beam. In contrast to the use of a red-detuned Gaussian beam to couple the atoms, the blue-detuned hollow beam can confine cold atoms to the darkest regions of the beam, thereby minimizing shifts in the internal states and making the guide highly robust to heating effects. This single optical beam is used as both a funnel and a guide to maximize the number of atoms into the fiber. In the proposed experiment, Rb atoms are loaded into a magneto-optical trap (MOT) above a vertically oriented optical fiber. We observe a gravito-optical trapping effect for atoms with high orbital momentum around the trap axis, which prevents atoms from coupling to the fiber: these atoms lack the kinetic energy to escape the potential and are thus trapped in the laser funnel indefinitely. We find that by reducing the dipolar force to the point at which the trapping effect just vanishes, it is possible to optimize the coupling of atoms into the fiber. Our simulations predict that by using a low-power (2.5 mW) and far-detuned (300 GHz) Laguerre-Gaussian beam with a 20-{mu}m-radius core hollow fiber, it is possible to couple 11% of the atoms from a MOT 9 mm away from the fiber. When the MOT is positioned farther away, coupling efficiencies over 50% can be achieved with larger core fibers.

Laser induced fluorescence spectroscopy in atomic beams of radioactive nuclides

International Nuclear Information System (INIS)

Rebel, H.; Schatz, G.

1982-01-01

Measurements of the resonant scattering of light from CW tunable dye lasers, by a well collimated atomic beam, enable hyperfine splittings and optical isotope shifts to be determined with high precision and high sensitivity. Recent off-line atomic beam experiments with minute samples, comprising measurements with stable and unstable Ba, Ca and Pb isotopes are reviewed. The experimental methods and the analysis of the data are discussed. Information on the variation of the rms charge radii and on electromagnetic moments of nuclei in long isotopic chains is presented. (orig.) [de

An atomic beam source for fast loading of a magneto-optical trap under high vacuum

DEFF Research Database (Denmark)

McDowall, P.D.; Hilliard, Andrew; Grünzweig, T.

2012-01-01

We report on a directional atomic beam created using an alkali metal dispenser and a nozzle. By applying a high current (15 A) pulse to the dispenser at room temperature we can rapidly heat it to a temperature at which it starts dispensing, avoiding the need for preheating. The atomic beam produced...... is capable of loading 90 of a magneto-optical trap (MOT) in less than 7 s while maintaining a low vacuum pressure of 10 -11 Torr. The transverse velocity components of the atomic beam are measured to be within typical capture velocities of a rubidium MOT. Finally, we show that the atomic beam can be turned...

Antihydrogen atom formation in a CUSP trap towards spin polarized beams

Energy Technology Data Exchange (ETDEWEB)

Kuroda, N., E-mail: kuroda@radphys4.c.u-tokyo.ac.jp [University of Tokyo, Graduate School of Arts and Sciences (Japan); Enomoto, Y. [RIKEN Advanced Science Institute (Japan); Michishio, K. [Tokyo University of Science, Department of Physics (Japan); Kim, C. H. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Higaki, H. [Hiroshima University, Graduate School of Advanced Science of Matter (Japan); Nagata, Y.; Kanai, Y. [RIKEN Advanced Science Institute (Japan); Torii, H. A. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Corradini, M.; Leali, M.; Lodi-Rizzini, E.; Venturelli, L.; Zurlo, N. [Universita di Brescia and Instituto Nazionale di Fisica Nucleare, Dipartimento di Chimica e Fisica per l' Ingegneria e per i Materiali (Italy); Fujii, K.; Ohtsuka, M.; Tanaka, K. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Imao, H. [RIKEN Nishina Center for Accelerator-Based Science (Japan); Nagashima, Y. [Tokyo University of Science, Department of Physics (Japan); Matsuda, Y. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Juhasz, B. [Stefan Meyer Institut fuer Subatomare Physik (Austria); and others

2012-12-15

The ASACUSA collaboration has been making a path to realize high precision microwave spectroscopy of ground-state hyperfine transitions of antihydrogen atom in flight for stringent test of the CPT symmetry. For this purpose, an efficient extraction of a spin polarized antihydrogen beam is essential. In 2010, we have succeeded in synthesizing our first cold antihydrogen atoms employing a CUSP trap. The CUSP trap confines antiprotons and positrons simultaneously with its axially symmetric magnetic field to form antihydrogen atoms. It is expected that antihydrogen atoms in the low-field-seeking states are preferentially focused along the cusp magnetic field axis whereas those in the high-field-seeking states are defocused, resulting in the formation of a spin-polarized antihydrogen beam.

High-flux cold rubidium atomic beam for strongly-coupled cavity QED

Energy Technology Data Exchange (ETDEWEB)

Roy, Basudev [Indian Institute of Science Education and Research, Kolkata (India); University of Maryland, MD (United States); Scholten, Michael [University of Maryland, MD (United States)

2012-08-15

This paper presents a setup capable of producing a high-flux continuous beam of cold rubidium atoms for cavity quantum electrodynamics experiments in the region of strong coupling. A 2D{sup +} magneto-optical trap (MOT), loaded with rubidium getters in a dry-film-coated vapor cell, fed a secondary moving-molasses MOT (MM-MOT) at a rate greater than 2 x 10{sup 10} atoms/s. The MM-MOT provided a continuous beam with a tunable velocity. This beam was then directed through the waist of a cavity with a length of 280 μm, resulting in a vacuum Rabi splitting of more than ±10 MHz. The presence of a sufficient number of atoms in the cavity mode also enabled splitting in the polarization perpendicular to the input. The cavity was in the strong coupling region, with an atom-photon dipole coupling coefficient g of 7 MHz, a cavity mode decay rate κ of 3 MHz, and a spontaneous emission decay rate γ of 6 MHz.

Proceedings of the workshop on atomic physics with fast heavy-ion beams

International Nuclear Information System (INIS)

Kanter, E.P.; Minchinton, A.

1983-01-01

The Workshop on Atomic Physics with Fast Heavy-Ion Beams was held in the Physics Division, Argonne National Laboratory on January 20 and 21, 1983. The meeting brought together approx. 50 practitioners in the field of accelerator-based atomic physics. The workshop was held to focus attention on possible areas of atomic physics research which would benefit from use of the newest generation of accelerators designed to produce intense high-quality beams of fast heavy ions. Abstracts of individual paper were prepared separately for the data base

Polarization-dependent spectra in the photoassociative ionization of cold atoms in a bright sodium beam

International Nuclear Information System (INIS)

Ramirez-Serrano, Jaime; DeGraffenreid, William; Weiner, John

2002-01-01

We report measurements of cold photoassociative ionization (PAI) spectra obtained from collisions within a slow, bright Na atomic beam. A high-brightness atom flux, obtained by optical cooling and focusing of the atom beam, permits a high degree of alignment and orientation of binary collisions with respect to the laboratory atom-beam axis. The results reveal features of PAI spectra not accessible in conventional magneto-optical trap studies. We take advantage of this high degree of alignment to selectively excite autoionizing doubly excited states of specific symmetry

Generation of a cold pulsed beam of Rb atoms by transfer from a 3D magneto-optic trap

OpenAIRE

Chanu, Sapam Ranjita; Rathod, Ketan D.; Natarajan, Vasant

2016-01-01

We demonstrate a technique for producing a cold pulsed beam of atoms by transferring a cloud of atoms trapped in a three dimensional magneto-optic trap (MOT). The MOT is loaded by heating a getter source of Rb atoms. We show that it is advantageous to transfer with two beams (with a small angle between them) compared to a single beam, because the atoms stop interacting with the beams in the two-beam technique, which results in a Gaussian velocity distribution. The atoms are further cooled in ...

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

Science.gov (United States)

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Synthesis and decomposition of a novel carboxylate precursor to indium oxide

Science.gov (United States)

Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

1994-01-01

Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

Science.gov (United States)

Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

2018-01-09

Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

Self-corrected sensors based on atomic absorption spectroscopy for atom flux measurements in molecular beam epitaxy

International Nuclear Information System (INIS)

Du, Y.; Liyu, A. V.; Droubay, T. C.; Chambers, S. A.; Li, G.

2014-01-01

A high sensitivity atom flux sensor based on atomic absorption spectroscopy has been designed and implemented to control electron beam evaporators and effusion cells in a molecular beam epitaxy system. Using a high-resolution spectrometer and a two-dimensional charge coupled device detector in a double-beam configuration, we employ either a non-resonant line or a resonant line with low cross section from the same hollow cathode lamp as the reference for nearly perfect background correction and baseline drift removal. This setup also significantly shortens the warm-up time needed compared to other sensor technologies and drastically reduces the noise coming from the surrounding environment. In addition, the high-resolution spectrometer allows the most sensitive resonant line to be isolated and used to provide excellent signal-to-noise ratio

Sputtering of neutral and ionic indium clusters

International Nuclear Information System (INIS)

Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

1993-01-01

Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident ∼4 keV Ar + ions. In the secondary neutral mass spectra, indium clusters as large as In 32 were observed. In the secondary ion mass spectra, indium clusters up to In 18 + were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be -5.6 and -4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions

Atomic data for beam-stimulated plasma spectroscopy in fusion plasmas

International Nuclear Information System (INIS)

Marchuk, O.; Biel, W.; Schlummer, T.; Ralchenko, Yu.; Schultz, D. R.

2013-01-01

Injection of high energy atoms into a confined plasma volume is an established diagnostic technique in fusion research. This method strongly depends on the quality of atomic data for charge-exchange recombination spectroscopy (CXRS), motional Stark effect (MSE) and beam-emission spectroscopy (BES). We present some examples of atomic data for CXRS and review the current status of collisional data for parabolic states of hydrogen atoms that are used for accurate MSE modeling. It is shown that the collisional data require knowledge of the excitation density matrix including the off-diagonal matrix elements. The new datasets for transitions between parabolic states are used in an extended collisional-radiative model. The ratios between the σ- and π-components and the beam-emission rate coefficients are calculated in a quasi-steady state approximation. Good agreement with the experimental data from JET is found which points out to strong deviations from the statistical distribution for magnetic sublevels

Atomic size effect on the formation of ionized cluster beam epitaxy in Lennard-Jones systems

International Nuclear Information System (INIS)

Hsieh Horngming; Averback, R.S.

1991-01-01

Ionized cluster beam deposition is studied by molecular dynamics simulations in which the atomic size of incident cluster atoms is different from the size of substrate atoms. Lennard-Jones interatomic potentials are used for the two-component system. The results provide the morphologies of the overlayers for various atomic sizes and are compared to simulation results of molecular beam epitaxy. (orig.)

ASACUSA: the first beam of anti-hydrogen atoms

International Nuclear Information System (INIS)

2014-01-01

The ASACUSA experiment at CERN has produced for the first time a beam of anti-hydrogen atoms, 80 atoms of anti-hydrogen have been detected at a distance of 2.7 meters away from their production place which is the true achievement of this experiment. The ASACUSA team has developed an innovative device that allows the transfer of the anti-hydrogen atoms in a place where they can be studied in flight, away from the intense magnetic field that was necessary to produce them but affect their spectroscopic properties. Anti-hydrogen atoms are made up of anti-electrons and anti-protons, according to the theory their spectrum must be identical to that of hydrogen atoms and any difference that might be detected by the ASACUSA experiment may shed light on the matter-antimatter asymmetry issue. (A.C.)

Substrate Dependent Ad-Atom Migration on Graphene and the Impact on Electron-Beam Sculpting Functional Nanopores.

Science.gov (United States)

Freedman, Kevin J; Goyal, Gaurav; Ahn, Chi Won; Kim, Min Jun

2017-05-10

The use of atomically thin graphene for molecular sensing has attracted tremendous attention over the years and, in some instances, could displace the use of classical thin films. For nanopore sensing, graphene must be suspended over an aperture so that a single pore can be formed in the free-standing region. Nanopores are typically drilled using an electron beam (e-beam) which is tightly focused until a desired pore size is obtained. E-beam sculpting of graphene however is not just dependent on the ability to displace atoms but also the ability to hinder the migration of ad-atoms on the surface of graphene. Using relatively lower e-beam fluxes from a thermionic electron source, the C-atom knockout rate seems to be comparable to the rate of carbon ad-atom attraction and accumulation at the e-beam/graphene interface (i.e., R knockout ≈ R accumulation ). Working at this unique regime has allowed the study of carbon ad-atom migration as well as the influence of various substrate materials on e-beam sculpting of graphene. We also show that this information was pivotal to fabricating functional graphene nanopores for studying DNA with increased spatial resolution which is attributed to atomically thin membranes.

Development of atomic-beam resonance method to measure the nuclear moments of unstable nuclei

Energy Technology Data Exchange (ETDEWEB)

Sugimoto, T., E-mail: sugimoto@ribf.riken.jp [SPring-8 (Japan); Asahi, K. [Tokyo Institute of Technology, Department of Physics (Japan); Kawamura, H.; Murata, J. [Rikkyo University, Department of Physics (Japan); Nagae, D.; Shimada, K. [Tokyo Institute of Technology, Department of Physics (Japan); Ueno, H.; Yoshimi, A. [RIKEN Nishina Center (Japan)

2008-01-15

We have been working on the development of a new technique of atomic-beam resonance method to measure the nuclear moments of unstable nuclei. In the present study, an ion-guiding system to be used as an atomic-beam source have been developed.

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

Science.gov (United States)

Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

2011-11-15

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

Plasma heating with multi-MeV neutral atom beams

International Nuclear Information System (INIS)

Grisham, L.R.; Post, D.E.; Mikkelsen, D.R.; Eubank, H.P.

1981-10-01

We explore the utility and feasibility of neutral beams of greater than or equal to 6 AMU formed from negative ions, and also of D 0 formed from D - . The negative ions would be accelerated to approx. 1 to 2 MeV/AMU and neutralized, whereupon the neutral atoms would be used to heat and, perhaps, to drive current in magnetically confined plasmas. Such beams appear feasible and offer the promise of significant advantages relative to conventional neutral beams based on positive deuterium ions at approx. 150 keV

Development of francium atomic beam for the search of the electron electric dipole moment

Directory of Open Access Journals (Sweden)

Sato Tomoya

2014-03-01

Full Text Available For the measurement of the electron electric dipole moment using Fr atoms, a Fr ion-atom conversion is one of the most critical process. An ion-atom converter based on the “orthotropic” type of Fr source has been developed. This converter is able to convert a few keV Fr ion beam to a thermal atomic beam using a cycle of the surface ionization and neutralization. In this article, the development of the converter is reported.

Localization of metastable atom beams with optical standing waves: nanolithography at the heisenberg limit

Science.gov (United States)

Johnson; Thywissen; Dekker; Berggren; Chu; Younkin; Prentiss

1998-06-05

The spatially dependent de-excitation of a beam of metastable argon atoms, traveling through an optical standing wave, produced a periodic array of localized metastable atoms with position and momentum spreads approaching the limit stated by the Heisenberg uncertainty principle. Silicon and silicon dioxide substrates placed in the path of the atom beam were patterned by the metastable atoms. The de-excitation of metastable atoms upon collision with the surface promoted the deposition of a carbonaceous film from a vapor-phase hydrocarbon precursor. The resulting patterns were imaged both directly and after chemical etching. Thus, quantum-mechanical steady-state atom distributions can be used for sub-0.1-micrometer lithography.

Synthesis and characterization of five-coordinated indium amidinates

Energy Technology Data Exchange (ETDEWEB)

Riahi, Yasaman

2016-07-29

The focus of this work is synthesis, characterization and exploring the reactivity of new indium amidinate compounds of the type R{sub 2}InX (R = R''NCR'NR''; R' = Ph, R'' = SiMe{sub 3}, iPr, dipp; X = Br, Cl) with the coordination number of five and R{sub 3}In (R = Me{sub 3}SiNCPhNSiMe{sub 3}) with the coordination number of six. By using amidinates as chelating ligands the electron deficiency of indium atom will be resolved. Additionally, by using different substituents the study of the different synthesized indium amidinates has become possible. The selected method for the synthesis allows the carbodiimides to react with organolithium compounds to get the corresponding lithium amidinates. Afterwards the resulting lithium amidinates take part in transmetalation reactions with InBr{sub 3} and InCl{sub 3}. The study of the reactivity of indium amidinate complexes including nucleophilic reactions as well as their reduction were also examined. Beside crystal structure analysis, nuclear magnetic resonance spectroscopy as well as elemental analysis has been applied to characterize the compounds.

Entanglement of atomic beams: Tests of complementarity and other applications

International Nuclear Information System (INIS)

Bogar, P.; Bergou, J.A.

1996-01-01

It is shown that distinct atomic beams can be entangled when they interact with quantum superpositions of macroscopically separated micromaser fields. Experimentally feasible tests of complementarity are proposed, detecting Ramsey interference (or not) in one and open-quote open-quote Welcher Weg close-quote close-quote information (or not) in the other entangled beam. Available information and fringe contrast can be manipulated using classical and quantum fields. The open-quote open-quote quantum eraser close-quote close-quote is realized in the former case, while it is only a special feature in the latter one. Other applications of entangled atoms are also suggested. copyright 1996 The American Physical Society

Transverse resonance-radiation pressure on atomic beams and the influence of fluctuations

International Nuclear Information System (INIS)

Bjorkholm, J.E.; Freeman, R.R.; Ashkin, A.; Pearson, D.B.

1979-01-01

We have experimentally demonstrated that a beam of neutral sodium atoms can be focused to a spot diameter of approx. 50 μ using the transverse dipole resonance-radiation pressure exerted by a 40 mW laser beam. Simple analysis shows that in some cases the spot sizes are limited by the random fluctuations of the spontaneous radiation pressure; with 1 W of laser power, spot sizes less than 10 μ should be attainable. The effects of heating by spontaneous scattering can have important detrimental effects in other applications of resonance - radiation pressure on atoms, such as the slowing or guiding of atoms. Consideration of heating effects is of paramount importance in the design of optical traps for neutral atoms. (KBE)

Performance predictions of a focused ion beam from a laser cooled and compressed atomic beam

Energy Technology Data Exchange (ETDEWEB)

Haaf, G. ten; Wouters, S. H. W.; Vredenbregt, E. J. D.; Mutsaers, P. H. A. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Geer, S. B. van der [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Pulsar Physics, Burghstraat 47, 5614 BC Eindhoven (Netherlands)

2014-12-28

Focused ion beams are indispensable tools in the semiconductor industry because of their ability to image and modify structures at the nanometer length scale. Here, we report on performance predictions of a new type of focused ion beam based on photo-ionization of a laser cooled and compressed atomic beam. Particle tracing simulations are performed to investigate the effects of disorder-induced heating after ionization in a large electric field. They lead to a constraint on this electric field strength which is used as input for an analytical model which predicts the minimum attainable spot size as a function of, amongst others, the flux density of the atomic beam, the temperature of this beam, and the total current. At low currents (I < 10 pA), the spot size will be limited by a combination of spherical aberration and brightness, while at higher currents, this is a combination of chromatic aberration and brightness. It is expected that a nanometer size spot is possible at a current of 1 pA. The analytical model was verified with particle tracing simulations of a complete focused ion beam setup. A genetic algorithm was used to find the optimum acceleration electric field as a function of the current. At low currents, the result agrees well with the analytical model, while at higher currents, the spot sizes found are even lower due to effects that are not taken into account in the analytical model.

The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration.

Science.gov (United States)

Xu, Zhenzhu; Yu, Yuefeng; Han, Jinglei; Wen, Lei; Gao, Fangliang; Zhang, Shuguang; Li, Guoqiang

2017-11-09

Both well vertically aligned and uniformly separated (In)GaN nanorods (NRs) were successfully grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Effects of supplied indium (In) flux on the morphology of (In)GaN NRs were investigated systematically. The scanning electron microscopic analysis and transmission electron microscopic measurements revealed that the presence of In flux can help to inhibit NR coalescence and obtain well-separated (In)GaN NRs. By increasing the supplied In flux, the densities of (In)GaN NRs decreased and the axial growth rates increased. According to the energy dispersive X-ray spectrometry measurements and theoretical calculations, the increase of In content of the NRs enhanced Ga diffusion on the NR sidewalls, which resulted in an increased axial growth rate. A kinetic In-assisted growth model for the well-separated (In)GaN NRs is therefore proposed. The model explains that the presence of In flux not only reduces the density of (In)GaN NRs due to the increase in substrate surface migration of Ga adatoms at nucleation stage but also lead to a remarkable enhancement of axial growth rate at growth stage. Consequently, the NR coalescence was significantly suppressed. The results provide a demonstration of obtaining well-separated (In)GaN NRs and open up further possibility of developing (In)GaN NR-based optoelectronic devices.

Important atomic physics issues for ion beam fusion

International Nuclear Information System (INIS)

Bangerter, Roger.

1986-01-01

The nearly endless variety of interesting and challenging problems makes physics research enjoyable. Most of us would choose to be physicists even if physics had no practical applications. However, physics does have practical applications. This workshop deals with one of those applications, namely ion beam fusion. Not all interesting and challenging atomic physics questions are important for ion beam fusion. This paper suggests some questions that may be important for ion beam fusion. It also suggests some criteria for determining if a question is only interesting, or both interesting and important. Importance is time dependent and, because of some restrictions on the flow of information, also country dependent. In the early days of ion beam fusion, it was important to determine if ion beam fusion made sense. Approximate answers and bounds on various parameters were required. Accurate, detailed answers were not needed. Because of the efforts of many people attending this workshop, we now know that ion beam fusion does make some sense. We must still determine if ion beam fusion truly makes good sense. If it does make good sense, we must determine how to make it work. Accurate detailed answers are becoming increasingly important. (author)

A review of the world market of indium (Economy of indium)

International Nuclear Information System (INIS)

Naumov, A.V.

2005-01-01

A review of the current state of the world and Russian markets of indium and indium-containing products was made based on the publications of the last years. Main fields of indium application are given, in particular, its using for neutron absorbing regulating rods in nuclear reactors. The second γ-radiation resulted from neutron absorption allows using indium as a neutron detector. Indium market stabilization is expected due to supply from China and South Korea [ru

Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

International Nuclear Information System (INIS)

Son, Phil Kook; Kim, Tae Hyung; Choi, Suk Won; Gwag, Jin Seog

2012-01-01

The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indium tinoxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 .deg. C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

Characterization of an atom beam produced with the help of a hollow-cathode discharge

International Nuclear Information System (INIS)

Babin, F.; Gagne, J.

1986-01-01

A hollow-cathode type discharge is used as a refractory element vapor generator for the formation of an atomic beam. The development of the technique brings us to discuss its possibilities in spectroscopic studies of refractory elements. We focus primarily on the production of a uranium atomic beam and its characterization by laser-induced fluorescence spectroscopy. We determine, among other things, the beam divergence and the most probable velocity along its axis for specific current and pressure conditions in the discharge. We also discuss beam behavior with respect to buffer gas pressure and electric current in the discharge

Measurement of the force on microparticles in a beam of energetic ions and neutral atoms

International Nuclear Information System (INIS)

Trottenberg, Thomas; Schneider, Viktor; Kersten, Holger

2010-01-01

The force on microparticles in an energetic ion beam is investigated experimentally. Hollow glass microspheres are injected into the vertically upward directed beam and their trajectories are recorded with a charge-coupled device camera. The net force on the particles is determined by means of the measured vertical acceleration. The resulting beam pressures are compared with Faraday cup measurements of the ion current density and calorimetric measurements of the beam power density. Due to the neutral gas background, the beam consists, besides the ions, of energetic neutral atoms produced by charge-exchange collisions. It is found that the measured composition of the drag force by an ion and a neutral atom component agrees with a beam model that takes charge-exchange collisions into account. Special attention is paid to the momentum contribution from sputtered atoms, which is shown to be negligible in this experiment, but should become measurable in case of materials with high sputtering yields.

Utilization of an arc-heated jet for production of supersonic seeded beams of atomic nitrogen

International Nuclear Information System (INIS)

Bickes, R.W. Jr.; Newton, K.R.; Herrmann, J.M.; Bernstein, R.B.

1976-01-01

Intense supersonic beams of atomic nitrogen (>10 17 atoms sr -1 sec -1 ) have been produced from the dissociation of N 2 in an Ar arc (at temperatures in excess of 6000 K) using the arc-heated nozzle beam source of Young, Rodgers, and Knuth. Experiments characterizing the N 2 dissociation and the translational energies of the N, N 2 , and Ar components in the beams are described. Evidence is presented for the formation of atomic C as well as C 2 and CH from the pyrolysis of CH 4 and C 2 H 4 in the Ar arc

Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

International Nuclear Information System (INIS)

Wang, R.X.; Beling, C.D.; Fung, S.; Djurisic, A.B.; Ling, C.C.; Li, S.

2005-01-01

The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In

Indium and thallium

International Nuclear Information System (INIS)

1976-01-01

The physical and the chemical properties and methods for producing indium and its main compounds have been studied. Presented are the major fields of application of the metal, inclusive of the atomic and space engineering. Described are the natural occurrence and the types of deposits of this disseminated element. Given are the main methods for extracting In from various raw materials, the methods being also evaluated economically. It is inferred, that all the conditions being equal, the extraction technique yields In at a lesser cost, a higher recovery and higher labour productivity. Described are methods for manufacturing the frequently used In compounds, such as the antimonide, arsenide, phosphide

An easy-to-use method for measuring the flux of free atoms in a cluster beam

International Nuclear Information System (INIS)

Cuvellier, J.; Binet, A.

1988-01-01

A method is proposed to measure the flux of free atoms remaining in a beam of clusters. The time-of-flight (TOF) of an Ar beam containing clusters was analysed for this purpose using an electron impact + quadrupole mass spectrometer as detector. When considering TOF's with mass settings at Ar + , a double mode structure was observed. The slow component was interpreted as coming from Ar clusters that fragment as Ar + in the ionization chamber of the detector. The rapid mode in the TOF's was linked to the free atoms remaining in the Ar beam. Evaluating the area of this mode allowed one to measure the flux of free atoms in the Ar beam. The method is not restricted to measurements on Ar beams

An atomic coilgun: using pulsed magnetic fields to slow a supersonic beam

International Nuclear Information System (INIS)

Narevicius, E; Parthey, C G; Libson, A; Narevicius, J; Chavez, I; Even, U; Raizen, M G

2007-01-01

We report the experimental demonstration of a novel method to slow atoms and molecules with permanent magnetic moments using pulsed magnetic fields. In our experiments, we observe the slowing of a supersonic beam of metastable neon from 461.0 ± 7.7 to 403 ± 16 m s -1 in 18 stages, where the slowed peak is clearly separated from the initial distribution. This method has broad applications as it may easily be generalized, using seeding and entrainment into supersonic beams, to all paramagnetic atoms and molecules

Manipulation and analysis of atomic and molecular beams using transmission gratings and Fresnel zone plates

Energy Technology Data Exchange (ETDEWEB)

Grisenti, R.E.

2000-06-01

In this thesis experimental results on the diffraction of rare gas atoms (He, Ne, Ar, Kr) and molecular (D{sub 2}) beams by a 100 nm period transmission grating and on the focusing of a helium atom beam through a Fresnel zone plate have been reported. (orig.)

Measurements of atomic transition probabilities in highly ionized atoms by fast ion beams

International Nuclear Information System (INIS)

Martinson, I.; Curtis, L.J.; Lindgaerd, A.

1977-01-01

A summary is given of the beam-foil method by which level lifetimes and transition probabilities can be determined in atoms and ions. Results are presented for systems of particular interest for fusion research, such as the Li, Be, Na, Mg, Cu and Zn isoelectronic sequences. The available experimental material is compared to theoretical transition probabilities. (author)

Experimental Investigation of the Influence of the Laser Beam Waist on Cold Atom Guiding Efficiency.

Science.gov (United States)

Song, Ningfang; Hu, Di; Xu, Xiaobin; Li, Wei; Lu, Xiangxiang; Song, Yitong

2018-02-28

The primary purpose of this study is to investigate the influence of the vertical guiding laser beam waist on cold atom guiding efficiency. In this study, a double magneto-optical trap (MOT) apparatus is used. With an unbalanced force in the horizontal direction, a cold atomic beam is generated by the first MOT. The cold atoms enter the second chamber and are then re-trapped and cooled by the second MOT. By releasing a second atom cloud, the process of transferring the cold atoms from MOT to the dipole trap, which is formed by a red-detuned converged 1064-nm laser, is experimentally demonstrated. And after releasing for 20 ms, the atom cloud is guided to a distance of approximately 3 mm. As indicated by the results, the guiding efficiency depends strongly on the laser beam waist; the efficiency reaches a maximum when the waist radius ( w ₀) of the laser is in the range of 15 to 25 μm, while the initial atom cloud has a radius of 133 μm. Additionally, the properties of the atoms inside the dipole potential trap, such as the distribution profile and lifetime, are deduced from the fluorescence images.

Fluorescence detection of white-beam X-ray absorption anisotropy: towards element-sensitive projections of local atomic structure

International Nuclear Information System (INIS)

Korecki, P.; Tolkiehn, M.; Dąbrowski, K. M.; Novikov, D. V.

2011-01-01

A method for a direct measurement of X-ray projections of the atomic structure is described. Projections of the atomic structure around Nb atoms in a LiNbO 3 single crystal were obtained from a white-beam X-ray absorption anisotropy pattern detected using Nb K fluorescence. Projections of the atomic structure around Nb atoms in a LiNbO 3 single crystal were obtained from a white-beam X-ray absorption anisotropy (XAA) pattern detected using Nb K fluorescence. This kind of anisotropy results from the interference of X-rays inside a sample and, owing to the short coherence length of a white beam, is visible only at small angles around interatomic directions. Consequently, the main features of the recorded XAA corresponded to distorted real-space projections of dense-packed atomic planes and atomic rows. A quantitative analysis of XAA was carried out using a wavelet transform and allowed well resolved projections of Nb atoms to be obtained up to distances of 10 Å. The signal of nearest O atoms was detected indirectly by a comparison with model calculations. The measurement of white-beam XAA using characteristic radiation indicates the possibility of obtaining element-sensitive projections of the local atomic structure in more complex samples

Tunable atom-light beam splitter using electromagnetically induced transparency

Science.gov (United States)

Zhu, Xinyu; Wen, Rong; Chen, J. F.

2018-06-01

With electromagnetically induced transmission (EIT), an optical field can be converted into collective atomic excitation and stored in the atomic medium through switching off the strong-coupling field adiabatically. By varying the power of the coupling pulse, we can control the ratio between the transmitted optical field and the stored atomic mode. We use a cloud of cold 85Rb atoms prepared in magneto-optical trap as the experimental platform. Based on a model of EIT dark-state polariton, we consider the real case where the atomic medium has a finite length. The theoretical calculation gives numerical results that agree well with the experimental data. The results show that the ratio can be changed approximately from 0 to 100%, when the maximum power of the coupling pulse (the pulse length is 100 ns) varies from 0 to 20 mW, in the cold atomic ensemble with an optical depth of 40. This process can be used to achieve an atom-light hybrid beam splitter with tunable splitting ratio and thus find potential application in interferometric measurement and quantum information processing.

Coherent and non coherent atom optics experiment with an ultra-narrow beam of metastable rare gas atoms; Experiences d'optique atomique coherente ou non avec un jet superfin d'atomes metastables de gaz rares

Energy Technology Data Exchange (ETDEWEB)

Grucker, J

2007-12-15

In this thesis, we present a new type of atomic source: an ultra-narrow beam of metastable atoms produced by resonant metastability exchange inside a supersonic beam of rare gas atoms. We used the coherence properties of this beam to observe the diffraction of metastable helium, argon and neon atoms by a nano-transmission grating and by micro-reflection-gratings. Then, we evidenced transitions between Zeeman sublevels of neon metastable {sup 3}P{sub 2} state due to the quadrupolar part of Van der Waals potential. After we showed experimental proofs of the observation of this phenomenon, we calculated the transition probabilities in the Landau - Zener model. We discussed the interest of Van der Waals - Zeeman transitions for atom interferometry. Last, we described the Zeeman cooling of the supersonic metastable argon beam ({sup 3}P{sub 2}). We have succeeded in slowing down atoms to speeds below 100 m/s. We gave experimental details and showed the first time-of-flight measurements of slowed atoms.

In-Situ Growth and Characterization of Indium Tin Oxide Nanocrystal Rods

Directory of Open Access Journals (Sweden)

Yan Shen

2017-11-01

Full Text Available Indium tin oxide (ITO nanocrystal rods were synthesized in-situ by a vapor-liquid-solid (VLS method and electron beam evaporation technique. When the electron-beam gun bombarded indium oxide (In2O3 and tin oxide (SnO2 mixed sources, indium and tin droplets appeared and acted as catalysts. The nanocrystal rods were in-situ grown on the basis of the metal catalyst point. The nanorods have a single crystal structure. Its structure was confirmed by X-ray diffraction (XRD and transmission electron microscopy (TEM. The surface morphology was analyzed by scanning electron microscopy (SEM. During the evaporation, a chemical process was happened and an In2O3 and SnO2 solid solution was formed. The percentage of doped tin oxide was calculated by Vegard’s law to be 3.18%, which was in agreement with the mixture ratio of the experimental data. The single crystal rod had good semiconductor switch property and its threshold voltage of single rod was approximately 2.5 V which can be used as a micro switch device. The transmission rate of crystalline nanorods ITO film was over 90% in visible band and it was up to 95% in the blue green band as a result of the oxygen vacancy recombination luminescence.

Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

International Nuclear Information System (INIS)

Koo, Su-Jin; Ju, Chang-Sik

2013-01-01

Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination

Resonant Laser Manipulation of an Atomic Beam

Science.gov (United States)

2010-07-01

Technical Paper 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Resonant Laser Manipulation of an Atomic Beam...steering and collimating flows with higher densities and energies than current common practice . One impediment to this extension is the development of...where Δεg is the ground state Stark shift, Ω is the Rabi frequency (related to intensity), Isat is the saturation intensity of the transition, and I(r

Acid-catalyzed kinetics of indium tin oxide etching

Energy Technology Data Exchange (ETDEWEB)

Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

2014-08-28

We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

Ion Flux Measurements in Electron Beam Produced Plasmas in Atomic and Molecular Gases

Science.gov (United States)

Walton, S. G.; Leonhardt, D.; Blackwell, D. D.; Murphy, D. P.; Fernsler, R. F.; Meger, R. A.

2001-10-01

In this presentation, mass- and time-resolved measurements of ion fluxes sampled from pulsed, electron beam-generated plasmas will be discussed. Previous works have shown that energetic electron beams are efficient at producing high-density plasmas (10^10-10^12 cm-3) with low electron temperatures (Te < 1.0 eV) over the volume of the beam. Outside the beam, the plasma density and electron temperature vary due, in part, to ion-neutral and electron-ion interactions. In molecular gases, electron-ion recombination plays a significant role while in atomic gases, ion-neutral interactions are important. These interactions also determine the temporal variations in the electron temperature and plasma density when the electron beam is pulsed. Temporally resolved ion flux and energy distributions at a grounded electrode surface located adjacent to pulsed plasmas in pure Ar, N_2, O_2, and their mixtures are discussed. Measurements are presented as a function of operating pressure, mixture ratio, and electron beam-electrode separation. The differences in the results for atomic and molecular gases will also be discussed and related to their respective gas-phase kinetics.

Optimization of the performance of rf transitions for the TUNL atomic beam polarized ion source

International Nuclear Information System (INIS)

Crosson, E.R.; Clegg, T.B.; Karwowski, H.J.; Lemieux, S.K.

1991-01-01

We have utilized the spin-dependence of the cross section for electron impact ionization of H 0 and D 0 atoms in the ionizer of our atomic beam polarized ion source to study the performance of the rf transitions which provide the nuclear polarization of the atomic beam. Switching the rf transitions on and off modulates the output polarized current. This modulation is observed using a lock-in amplifier and provides a fast and reliable method for optimization of transition unit parameters. (orig.)

New diagnostic technique for Zeeman-compensated atomic beam slowing: technique and results

NARCIS (Netherlands)

Molenaar, P.A.; Straten, P. van der; Heideman, H.G.M.; Metcalf, H.

1997-01-01

We have developed a new diagnostic tool for the study of Zeeman-compensated slowing of an alkali atomic beam. Our time-of-flight technique measures the longitudinal veloc- ity distribution of the slowed atoms with a resolution below the Doppler limit of 30 cm/s. Furthermore, it can map

Generic Top-Functionalization of Patterned Antifouling Zwitterionic Polymers on Indium Tin Oxide

NARCIS (Netherlands)

Li, Y.; Giesbers, M.; Zuilhof, H.

2012-01-01

This paper presents a novel surface engineering approach that combines photochemical grafting and surface-initiated atom transfer radical polymerization (SI-ATRP) to attach zwitterionic polymer brushes onto indium tin oxide (ITO) substrates. The photochemically grafted hydroxyl-terminated organic

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

International Nuclear Information System (INIS)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

2009-01-01

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

2009-06-15

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Electrical, optical and photoelectric properties of cadmium sulfide monocrystals doped by indium and irradiated by electrons

CERN Document Server

Davidyuk, G E; Manzhara, V S

2002-01-01

One studied effect of irradiation by E = 1.2 MeV energy and PHI = 2 x 10 sup 1 sup 7 cm sup - sup 2 dose fast electrons on electrical, optical and photoelectrical CdS single-crystals doped by In. On the basis of analysis of the experimental results one makes conclusions about decomposition and, in this case, indium atoms occurring in cation sublattice nodes are knocked out by cadmium atoms. In CdS:In irradiated specimens one detected new centres of slow recombination with occurrence of maximums of photoconductivity optical suppression within lambda sub M sub sub 1 = 0.75 mu m and lambda sub M sub sub 2 = 1.03 mu m range. It is assumed that complexes containing cadmium vacancies and indium atoms are responsible for recombination new centres

Fluorescence detection of white-beam X-ray absorption anisotropy: towards element-sensitive projections of local atomic structure

Science.gov (United States)

Korecki, P.; Tolkiehn, M.; Dąbrowski, K. M.; Novikov, D. V.

2011-01-01

Projections of the atomic structure around Nb atoms in a LiNbO3 single crystal were obtained from a white-beam X-ray absorption anisotropy (XAA) pattern detected using Nb K fluorescence. This kind of anisotropy results from the interference of X-rays inside a sample and, owing to the short coherence length of a white beam, is visible only at small angles around interatomic directions. Consequently, the main features of the recorded XAA corresponded to distorted real-space projections of dense-packed atomic planes and atomic rows. A quantitative analysis of XAA was carried out using a wavelet transform and allowed well resolved projections of Nb atoms to be obtained up to distances of 10 Å. The signal of nearest O atoms was detected indirectly by a comparison with model calculations. The measurement of white-beam XAA using characteristic radiation indicates the possibility of obtaining element-sensitive projections of the local atomic structure in more complex samples. PMID:21997909

Generation of dense, pulsed beams of refractory metal atoms using two-stage laser ablation

International Nuclear Information System (INIS)

Kadar-Kallen, M.A.; Bonin, K.D.

1994-01-01

We report a technique for generating a dense, pulsed beam of refractory metal atoms using two-stage laser ablation. An atomic beam of uranium was produced with a peak, ground-state number density of 1x10 12 cm -3 at a distance of z=27 cm from the source. This density can be scaled as 1/z 3 to estimate the density at other distances which are also far from the source

Ridge Minimization of Ablated Morphologies on ITO Thin Films Using Squared Quasi-Flat Top Beam

Directory of Open Access Journals (Sweden)

Hoon-Young Kim

2018-03-01

Full Text Available In this study, we explore the improvements in pattern quality that was obtained with a femtosecond laser with quasi-flat top beam profiles at the ablated edge of indium tin oxide (ITO thin films for the patterning of optoelectronic devices. To ablate the ITO thin films, a femtosecond laser is used that has a wavelength and pulse duration of 1030 nm and 190 fs, respectively. The squared quasi-flat top beam is obtained from a circular Gaussian beam using slits with varying x-y axes. Then, the patterned ITO thin films are measured using both scanning electron and atomic force microscopes. In the case of the Gaussian beam, the ridge height and width are approximately 39 nm and 1.1 μm, respectively, whereas, when the quasi-flat top beam is used, the ridge height and width are approximately 7 nm and 0.25 μm, respectively.

Recalibration of indium foil for personnel screening in criticality accidents.

Science.gov (United States)

Takada, C; Tsujimura, N; Mikami, S

2011-03-01

At the Nuclear Fuel Cycle Engineering Laboratories of the Japan Atomic Energy Agency (JAEA), small pieces of indium foil incorporated into personal dosemeters have been used for personnel screening in criticality accidents. Irradiation tests of the badges were performed using the SILENE reactor to verify the calibration of the indium activation that had been made in the 1980s and to recalibrate them for simulated criticalities that would be the most likely to occur in the solution process line. In addition, Monte Carlo calculations of the indium activation using the badge model were also made to complement the spectral dependence. The results lead to a screening level of 15 kcpm being determined that corresponds to a total dose of 0.25 Gy, which is also applicable in posterior-anterior exposure. The recalibration based on the latest study will provide a sounder basis for the screening procedure in the event of a criticality accident.

Perturbed angular correlation study of the ion exchange of indium into silicalite zeolites

International Nuclear Information System (INIS)

Ramallo-Lopez, J.M.; Requejo, F.G.; Renteria, M.; Bibiloni, A.G.; Miro, E.E.

1999-01-01

Two indium-containing silicalite zeolites (In/H-ZSM5) catalysts prepared by wet impregnation and ionic exchange were characterized by the Perturbed Angular Correlation (PAC) technique using 111 In as probe to determine the nature of the indium species. Some of these species take part in the catalytic reaction of the selective reduction (SCR) of NO x with methane. PAC experiments were performed at 500 deg. C in air before and after reduction-reoxidation treatments on the catalysts in order to determine the origin of the different hyperfine interactions and then the degree of ionic exchange. Complementary catalytic activity characterizations were also performed.PAC experiments performed on the catalyst obtained by wet impregnation showed that all In-atoms form In 2 O 3 crystallites while almost 70% of In-atoms form In 2 O 3 in the catalyst obtained by ionic exchange. The PAC experiments of both catalysts performed after the reduction-reoxidation treatment revealed the presence of two hyperfine interactions, different from those corresponding to indium in In 2 O 3 . These hyperfine interactions should be associated to disperse In species responsible of the catalytic activity located in the ionic exchange-sites of the zeolites

Highly conducting and transparent sprayed indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

1998-03-01

Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

A sextupole-magnet as variable velocity selector for paramagnetic atomic beams in the thermal range

International Nuclear Information System (INIS)

Spindler, G.; Ebinghaus, H.; Steffens, E.

1974-01-01

The possibility of employing a sextupole-magnet as a velocity selector on account of its velocity dependent focusing properties for paramagnetic atomic beams is investigated. In comparison with a traditional velocity selector with rotating disks, a sextupole-magnet as velocity selector has the advantage of additional focusing and polarizing the atomic beam. Moreover it suppresses polymer molecules without an effective magnetic momentum of the electronic shell

The polarized atomic-beam target for the EDDA experiment and the time-reversal invariance test at COSY

International Nuclear Information System (INIS)

Eversheim, P.D.; Altmeier, M.; Felden, O.

1996-01-01

For the the EDDA experiment, which was set up to measure the p-vector - p-vector excitation function during the acceleration ramp of the cooler synchrotron COSY at Juelich, a polarized atomic-beam target was designed regarding the restrictions imposed by the geometry of the EDDA detector. Later, when the time-reversal invariance experiment is to be performed, the EDDA detector will serve as efficient internal polarimeter and the source has to deliver tensor polarized deuterons. The modular design of this polarized atomic-beam target that allows to meet these conditions are discussed in comparison to other existing polarized atomic-beam targets. (orig.)

Ion beam focusing by the atomic chains of a crystal lattice

International Nuclear Information System (INIS)

Shulga, V.I.

1975-01-01

A study is made of the focusing of a parallel ion beam by a pair of close packed atomic chains of a crystal. The focal length of this system has been calculated to the approximation of continuous potential of chain in the general form and also for a number of specific potentials of ion-atom interactions. Ar ion beam focusing by a Cu chain pair is discusssed in detail. For this case, the focal length has been calculated as a function of ion energy using the method of computer simulation of ion trajectories in the chain field. The calculations were made on the basis of the Born-Mayer potential with various constants. A pronounced dependence of focal length on the constant in this potential has been found. (author)

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Directory of Open Access Journals (Sweden)

Georgios S. E. Antipas

2015-01-01

Full Text Available The atomic environments of two chalcogenide glasses, with compositions GeSe4In10 and GeSe4In15, were studied via Reverse Monte Carlo and Density Functional Theory. Indium content demoted Ge–Se bonding in favor of Se-In while the contribution of Se–Se in the first coordination shell order was faint. Upon transition to the richer In glass, there was formation of rich Ge-centered clusters at radial distances further than 4 Å from the RMC box center, which was taken to signify a reduction of Ge–Se interactions. Cluster coordination by Se promoted stability while, very conclusively, In coordination lowered cluster stability by intervening in the Ge–Se and Se–Se networks.

New source of MeV negative ion and neutral atom beams

International Nuclear Information System (INIS)

Ter-Avetisyan, S.; Braenzel, J.; Schnürer, M.; Prasad, R.; Borghesi, M.; Jequier, S.; Tikhonchuk, V.

2016-01-01

The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities

New source of MeV negative ion and neutral atom beams

Energy Technology Data Exchange (ETDEWEB)

Ter-Avetisyan, S., E-mail: sargis@gist.ac.kr [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 500-712 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 500-712 (Korea, Republic of); Braenzel, J.; Schnürer, M. [Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin 12489 (Germany); Prasad, R. [Institute for Laser and Plasma Physics, Heinrich Heine University, Duesseldorf 40225 (Germany); Borghesi, M. [School of Mathematics and Physics, The Queen’s University of Belfast, Belfast BT7-1NN (United Kingdom); Jequier, S.; Tikhonchuk, V. [Centre Lasers Intenses et Applications, CEA, CNRS, University of Bordeaux, 33405 Talence (France)

2016-02-15

The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities.

Peculiarities of the interaction of indium-tin and indium-bismuth alloys with ammonium halides

International Nuclear Information System (INIS)

Red'kin, A.N.; Smirnov, V.A.; Sokolova, E.A.; Makovej, Z.I.; Telegin, G.F.

1990-01-01

Peculiarities of fusible metal alloys interaction with ammonium halogenides in vertical reactor are considered using indium-tin and indium-bismuth binary alloys. It is shown that at the end of the process the composition of metal and salt phases is determined by the equilibrium type and constant characteristic of the given salt-metal system. As a result the interaction of indium-tin and indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium which may be used in the processes of separation or purification. A model is suggested to calculate the final concentration of salt and metal phase components

New diagnostic technique for Zeeman-compensated atomic beam slowing: technique and results

OpenAIRE

Molenaar, P.A.; Straten, P. van der; Heideman, H.G.M.; Metcalf, H.

1997-01-01

We have developed a new diagnostic tool for the study of Zeeman-compensated slowing of an alkali atomic beam. Our time-of-flight technique measures the longitudinal veloc- ity distribution of the slowed atoms with a resolution below the Doppler limit of 30 cm/s. Furthermore, it can map the position and velocity distribution of atoms in either ground hyperfine level inside the solenoid without any devices inside the solenoid. The technique reveals the optical pumping ef- fects, and shows in de...

F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

International Nuclear Information System (INIS)

Xu, M.Y.; Li, J.; Herman, P.R.; Lilge, L.D.

2006-01-01

This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F 2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm 2 to an optimized single pulse fluence of 4.5 J/cm 2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F 2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. (orig.)

Theory of longitudinal atomic beam spin echo and parity violating Berry-phases in atoms; Theorie des longitudinalen Atomstrahl-Spinechos und paritaetsverletzende Berry-Phasen in Atomen

Energy Technology Data Exchange (ETDEWEB)

Bergmann, T.F.

2006-07-19

We present a nonrelativistic theory for the quantum mechanical description of longitudinal atomic beam spin echo experiments, where a beam of neutral atoms is subjected to static electric and magnetic fields. The atomic wave function is the solution of a matrix-valued Schroedinger equation and can be written as superposition of local (atomic) eigenstates of the potential matrix. The position- and time-dependent amplitude function of each eigenstate represents an atomic wave packet and can be calculated in a series expansion with a master formula that we derive. The zeroth order of this series expansion describes the adiabatic limit, whereas the higher order contributions contain the mixing of the eigenstates and the corresponding amplitude functions. We give a tutorial for the theoretical description of longitudinal atomic beam spin echo experiments and for the so-called Fahrplan model, which is a visualisation tool for the propagation of wave packets of different atomic eigenstates. As an example for the application of our theory, we study parity violating geometric (Berry-)phases. In this context, we define geometric flux densities, which for certain field configurations can be used to illustrate geometric phases in a vector diagram. Considering an example with a specific field configuration, we prove the existence of a parity violating geometric phase. (orig.)

On the theory of diffraction of Maxwellian atomic beams by solid surfaces

International Nuclear Information System (INIS)

Goodman, F.O.

1976-01-01

In the context of diffraction of Maxwellian (thermal) atomic beams by solid surfaces, the usual assumption that the angular position of the maximum in a diffracted beam corresponds to the diffraction angle of atoms with the most probable de Broglie wavelength is examined, and compared with other possible criteria and with the correct result. It is concluded that, although this criterion may be the best simple one available, it is certainly bad in some situations; the reasons why, and the conditions under which, it is expected to be good are discussed. Also, it is shown that considerable care must be taken when shapes of diffracted beams and when angular positions of their maxima are calculated, because certain physical effects (which are always present) may change these shapes and positions in unexpected ways. The theory is compared with two sets of relatively modern experimental data, one set for which the fit is good, and another set for which a fit is impossible

The polarized atomic-beam target for the EDDA experiment and the time-reversal invariance test at COSY

Science.gov (United States)

Eversheim, P. D.; Altmeier, M.; Felden, O.

1997-02-01

For the the EDDA experiment, which was set up to measure the p¯-p¯ excitation function during the acceleration ramp of the cooler synchrotron COSY at Jülich, a polarized atomic-beam target was designed regarding the restrictions imposed by the geometry of the EDDA detector. Later, when the time-reversal invariance experiment is to be performed, the EDDA detector will serve as efficient internal polarimeter and the source has to deliver tensor polarized deuterons. The modular design of this polarized atomic-beam target that allows to meet these conditions will be discussed in comparison to other existing polarized atomic-beam targets.

Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

2005-01-01

We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Design and development of high-resolution atomic beam fluorescence spectroscopy facility for isotope shift and hyperfine structure measurements

International Nuclear Information System (INIS)

Acharyulu, G.V.S.G.; Sankari, M.; Kiran Kumar, P.V.; Suryanarayana, M.V.

2012-01-01

A high-resolution atomic beam fluorescence spectroscopy facility for the determination of isotope shifts and hyperfine structure in atomic species has been designed and developed. A resistively heated graphite tube atomic beam source was designed, tested and integrated into a compact interaction chamber for atomic beam fluorescence experiments. The design of the laser-atom interaction chamber and the source has been modified in a phased manner so as to achieve sub-Doppler resolution. The system has been used to record the hyperfine spectrum of the D2 transitions of Rb and K isotopes. The spectral resolution achieved is ∼ 26 MHz and is adequate to carry out high resolution measurement of isotope shifts and hyperfine structure of various atomic species. The other major advantage of the source is that it requires very small amounts of sample for achieving very good signal to noise ratio. (author)

Nonlinear effects in optical pumping of a cold and slow atomic beam

KAUST Repository

Porfido, N.

2015-10-12

By photoionizing hyperfine (HF) levels of the Cs state 62P3/2 in a slow and cold atom beam, we find how their population depends on the excitation laser power. The long time (around 180μs) spent by the slow atoms inside the resonant laser beam is large enough to enable exploration of a unique atom-light interaction regime heavily affected by time-dependent optical pumping. We demonstrate that, under such conditions, the onset of nonlinear effects in the population dynamics and optical pumping occurs at excitation laser intensities much smaller than the conventional respective saturation values. The evolution of population within the HF structure is calculated by numerical integration of the multilevel optical Bloch equations. The agreement between numerical results and experiment outcomes is excellent. All main features in the experimental findings are explained by the occurrence of “dark” and “bright” resonances leading to power-dependent branching coefficients.

Spatial Atomic Layer Deposition of transparent conductive oxides

NARCIS (Netherlands)

Illiberi, A.; Scherpenborg, R.; Poodt, P.; Roozeboom, F.

2013-01-01

Undoped and indium doped ZnO films have been grown by Spatial Atomic Layer Deposition at atmospheric pressure. The electrical properties of ZnO films are controlled by varying the indium content in the range from 0 to 15 %. A minimum resistivity value of 3 mΩ•cm is measured in 180 nm thick films for

Germanium and indium

Science.gov (United States)

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

Perturbed angular correlation study of the ion exchange of indium into silicalite zeolites

Energy Technology Data Exchange (ETDEWEB)

Ramallo-Lopez, J.M., E-mail: requejo@venus.fisica.unlp.edu.ar; Requejo, F.G., E-mail: requejo@venus.fisica.unlp.edu.ar; Renteria, M., E-mail: requejo@venus.fisica.unlp.edu.ar; Bibiloni, A.G. [UNLP, Programa TENAES (CONICET) and Departamento de Fisica, Faculdad Cs Ex (Argentina)], E-mail: requejo@venus.fisica.unlp.edu.ar; Miro, E.E. [UNL, INCAPE (CONICET) and Faculdad Ing. Quimica (Argentina)

1999-09-15

Two indium-containing silicalite zeolites (In/H-ZSM5) catalysts prepared by wet impregnation and ionic exchange were characterized by the Perturbed Angular Correlation (PAC) technique using {sup 111}In as probe to determine the nature of the indium species. Some of these species take part in the catalytic reaction of the selective reduction (SCR) of NO{sub x} with methane. PAC experiments were performed at 500 deg. C in air before and after reduction-reoxidation treatments on the catalysts in order to determine the origin of the different hyperfine interactions and then the degree of ionic exchange. Complementary catalytic activity characterizations were also performed.PAC experiments performed on the catalyst obtained by wet impregnation showed that all In-atoms form In{sub 2}O{sub 3} crystallites while almost 70% of In-atoms form In{sub 2}O{sub 3} in the catalyst obtained by ionic exchange. The PAC experiments of both catalysts performed after the reduction-reoxidation treatment revealed the presence of two hyperfine interactions, different from those corresponding to indium in In{sub 2}O{sub 3}. These hyperfine interactions should be associated to disperse In species responsible of the catalytic activity located in the ionic exchange-sites of the zeolites.

Optoelectronic and magnetic properties of Mn-doped indium tin oxide: A first-principles study

Science.gov (United States)

Nath Tripathi, Madhvendra; Saeed Bahramy, Mohammad; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-10-01

The manganese doped indium tin oxide (ITO) has integrated magnetics, electronics, and optical properties for next generation multifunctional devices. Our first-principles density functional theory (DFT) calculations show that the manganese atom replaces b-site indium atom, located at the second coordination shell of the interstitial oxygen in ITO. It is also found that both anti-ferromagnetic and ferromagnetic behaviors are realizable. The calculated magnetic moment of 3.95μB/Mn as well as the high transmittance of ˜80% for a 150 nm thin film of Mn doped ITO is in good agreement with the experimental data. The inclusion of on-site Coulomb repulsion corrections via DFT + U methods turns out to improve the optical behavior of the system. The optical behaviors of this system reveal its suitability for the magneto-opto-electronic applications.

A polarized hydrogen/deuterium atomic beam source for internal target experiments

International Nuclear Information System (INIS)

Szczerba, D.; Buuren, L.D. van; Brand, J.F.J. van den; Bulten, H.J.; Ferro-Luzzi, M.; Klous, S.; Kolster, H.; Lang, J.; Mul, F.; Poolman, H.R.; Simani, M.C.

2000-01-01

A high-brightness hydrogen/deuterium atomic beam source is presented. The apparatus, previously used in electron scattering experiments with tensor-polarized deuterium (Ferro-Luzzi et al., Phys. Rev. Lett. 77 (1996) 2630; van den Brand et al., Phys. Rev. Lett. 78 (1997) 1235; Zhou et al., Phys. Rev. Lett. 82 (1998) 687; Bouwhuis et al., Phys. Rev. Lett. 82 (1999) 3755), was configured as a source for internal target experiments to measure single- and double-polarization observables, with either polarized hydrogen or vector/tensor polarized deuterium. The atomic beam intensity was enhanced by a factor of ∼2.5 by optimizing the Stern-Gerlach focusing system using high tip-field (∼1.5 T) rare-earth permanent magnets, and by increasing the pumping speed in the beam-formation chamber. Fluxes of (5.9±0.2)x10 16 1 H/s were measured in a diameter 12 mmx122 mm compression tube with its entrance at a distance of 27 cm from the last focusing element. The total output flux amounted to (7.6±0.2)x10 16 1 H/s

Application of ECR ion source beams in atomic physics

Energy Technology Data Exchange (ETDEWEB)

Meyer, F.W.

1987-01-01

The availability of intense, high charge state ion beams from ECR ion sources has had significant impact not only on the upgrading of cyclotron and synchrotron facilities, but also on multicharged ion collision research, as evidenced by the increasing number of ECR source facilities used at least on a part time basis for atomic physics research. In this paper one such facility, located at the ORNL ECR source, and dedicated full time to the study of multicharged ion collisions, is described. Examples of applications of ECR ion source beams are given, based on multicharged ion collision physics studies performed at Oak Ridge over the last few years. 21 refs., 18 figs., 2 tabs.

Large-angle adjustable coherent atomic beam splitter by Bragg scattering

NARCIS (Netherlands)

Koolen, A.E.A.; Jansen, G.T.; Domen, K.F.E.M.; Beijerinck, H.C.W.; Leeuwen, van K.A.H.

2002-01-01

Using a "monochromatic" (single-axial-velocity) and slow (250 m/s) beam of metastable helium atoms, we realize up to eighth-order Bragg scattering and obtain a splitting angle of 6 mrad at low laser power (3 mW). This corresponds to a truly macroscopic separation of 12 mm on the detector. For

Atomic scattering from an adsorbed monolayer solid with a helium beam that penetrates to the substrate

DEFF Research Database (Denmark)

Hansen, Flemming Yssing; Bruch, L.W.; Dammann, Bernd

2013-01-01

Diffraction and one-phonon inelastic scattering of a thermal energy helium atomic beam are evaluated in the situation that the target monolayer lattice is so dilated that the atomic beam penetrates to the interlayer region between the monolayer and the substrate. The scattering is simulated......(1 × 1) commensurate monolayer solid of H2/KCl(001). For the latter, there are cases where part of the incident beam is trapped in the interlayer region for times exceeding 50 ps, depending on the spacing between the monolayer and the substrate and on the angle of incidence. The feedback effect...

Atmospheric spatial atomic layer deposition of in-doped ZnO

NARCIS (Netherlands)

Illiberi, A.; Scherpenborg, R.; Roozeboom, F.; Poodt, P.

2014-01-01

Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range

Survey of atomic data base needs and accuracies for helium beam stopping and alpha particle diagnostics for ITER

International Nuclear Information System (INIS)

Summers, H.P.; Hellermann, M. von.

1992-01-01

This report is concerned with establishing a recommended collection of atomic collision data for the modelling, experimental investigation and exploitation of helium beams. The motivation stems from proposals for diagnostic beams for the ITER tokamak, targeted at alpha particle measurement via double charge transfer, neutralized alpha particle analysis and spectroscopic analysis of recombination radiation. The report discusses the beam energies, species involved in collisions with the helium atom beam (fuel, helium ash and plasma impurities) and plasma conditions prevailing in large tokamak devices. It also lists the required cross-section data

Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

International Nuclear Information System (INIS)

Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

2009-01-01

The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

Extraction of indium from extremely diluted solutions; Gewinnung von Indium aus extrem verduennten Loesungen

Energy Technology Data Exchange (ETDEWEB)

Vostal, Radek; Singliar, Ute; Froehlich, Peter [TU Bergakademie Freiberg (Germany). Inst. fuer Technische Chemie

2017-02-15

The demand for indium is rising with the growth of the electronics industry, where it is mainly used. Therefore, a multistage extraction process was developed to separate indium from a model solution whose composition was adequate to sphalerite ore. The initially very low concentration of indium in the solution was significantly increased by several successive extraction and reextraction steps. The process described is characterized by a low requirement for chemicals and a high purity of the obtained indium oxide.

Beams of fast neutral atoms and molecules in low-pressure gas-discharge plasma

Energy Technology Data Exchange (ETDEWEB)

Metel, A. S., E-mail: ametel@stankin.ru [Moscow State University of Technology ' Stankin,' (Russian Federation)

2012-03-15

Fast neutral atom and molecule beams have been studied, the beams being produced in a vacuum chamber at nitrogen, argon, or helium pressure of 0.1-10 Pa due to charge-exchange collisions of ions accelerated in the sheath between the glow discharge plasma and a negative grid immersed therein. From a flat grid, two broad beams of molecules with continuous distribution of their energy from zero up to e(U + U{sub c}) (where U is voltage between the grid and the vacuum chamber and U{sub c} is cathode fall of the discharge) are propagating in opposite directions. The beam propagating from the concave surface of a 0.2-m-diameter grid is focused within a 10-mm-diameter spot on the target surface. When a 0.2-m-diameter 0.2-m-high cylindrical grid covered by end disks and composed of parallel 1.5-mm-diameter knitting needles spaced by 4.5 mm is immersed in the plasma, the accelerated ions pass through the gaps between the needles, turn inside the grid into fast atoms or molecules, and escape from the grid through the gaps on its opposite side. The Doppler shift of spectral lines allows for measuring the fast atom energy, which corresponds to the potential difference between the plasma inside the chamber and the plasma produced as a result of charge-exchange collisions inside the cylindrical grid.

Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

2009-07-01

Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

Computer simulation of void formation in residual gas atom free metals by dual beam irradiation experiments

International Nuclear Information System (INIS)

Shimomura, Y.; Nishiguchi, R.; La Rubia, T.D. de; Guinan, M.W.

1992-01-01

In our recent experiments (1), we found that voids nucleate at vacancy clusters which trap gas atoms such as hydrogen and helium in ion- and neutron-irradiated copper. A molecular dynamics computer simulation, which implements an empirical embedded atom method to calculate forces that act on atoms in metals, suggests that a void nucleation occurs in pure copper at six and seven vacancy clusters. The structure of six and seven vacancy clusters in copper fluctuates between a stacking fault tetrahedron and a void. When a hydrogen is trapped at voids of six and seven vacancy, a void can keep their structure for appreciably long time; that is, the void do not relax to a stacking fault tetrahedron and grows to a large void. In order to explore the detailed atomics of void formation, it is emphasized that dual-beam irradiation experiments that utilize beams of gas atoms and self-ions should be carried out with residual gas atom free metal specimens. (author)

Quantitative STEM on indium containing group III-V semiconductor nanostructures

International Nuclear Information System (INIS)

Mehrtens, Thorsten

2013-01-01

In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.

2010-04-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlö gl, Udo

2010-01-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Science.gov (United States)

2011-03-01

spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

Polarized electron beams elastically scattered by atoms as a tool for testing fundamental predictions of quantum mechanics.

Science.gov (United States)

Dapor, Maurizio

2018-03-29

Quantum information theory deals with quantum noise in order to protect physical quantum bits (qubits) from its effects. A single electron is an emblematic example of a qubit, and today it is possible to experimentally produce polarized ensembles of electrons. In this paper, the theory of the polarization of electron beams elastically scattered by atoms is briefly summarized. Then the POLARe program suite, a set of computer programs aimed at the calculation of the spin-polarization parameters of electron beams elastically interacting with atomic targets, is described. Selected results of the program concerning Ar, Kr, and Xe atoms are presented together with the comparison with experimental data about the Sherman function for low kinetic energy of the incident electrons (1.5eV-350eV). It is demonstrated that the quantum-relativistic theory of the polarization of electron beams elastically scattered by atoms is in good agreement with experimental data down to energies smaller than a few eV.

Applications of beam-foil spectroscopy to atomic collisions in solids

Science.gov (United States)

Sellin, I. A.

1976-01-01

Some selected papers presented at the Fourth International Conference on Beam-Foil Spectroscopy, whose results are of particular pertinence to ionic collision phenomena in solids, are reviewed. The topics discussed include solid target effects and means of surmounting them in the measurement of excited projectile ion lifetimes for low-energy heavy element ions; the electron emission accompanying the passage of heavy particles through solid targets; the collision broadening of X rays emitted from 100 keV ions moving in solids; residual K-shell excitation in chlorine ions penetrating carbon; comparison between 40 MeV Si on gaseous SiH4 targets at 300 mtorr and 40 MeV Si on Al; and the emergent surface interaction in beam-foil spectroscopy. A distinct overlap of interests between the sciences of beam-foil spectroscopy and atomic collisions in solids is pointed out.

Spectroscopic investigation of indium halides as substitudes of mercury in low pressure discharges for lighting applications

Energy Technology Data Exchange (ETDEWEB)

Briefi, Stefan

2012-05-22

Low pressure discharges with indium halides as radiator are discussed as substitutes for hazardous mercury in conventional fluorescent lamps. In this work, the applicability of InBr and InCl in a low pressure discharge light source is investigated. The aim is to identify and understand the physical processes which determine the discharge characteristics and the efficiency of the generated near-UV emission of the indium halide molecule and of the indium atom which is created due to dissociation processes in the plasma. As discharge vessels sealed cylindrical quartz glass tubes which contain a defined amount of indium halide and a rare gas are used. Preliminary investigations showed that for a controlled variation of the indium halide density a well-defined cold spot setup is mandatory. This was realized in the utilized experimental setup. The use of metal halides raises the issue, that power coupling by internal electrodes is not possible as the electrodes would quickly be eroded by the halides. The comparison of inductive and capacitive RF-coupling with external electrodes revealed that inductively coupled discharges provide higher light output and much better long term stability. Therefore, all investigations are carried out using inductive RF-coupling. The diagnostic methods optical emission and white light absorption spectroscopy are applied. As the effects of absorption-signal saturation and reabsorption of emitted radiation within the plasma volume could lead to an underestimation of the determined population densities by orders of magnitude, these effects are considered in the data evaluation. In order to determine the electron temperature and the electron density from spectroscopic measurements, an extended corona model as population model of the indium atom has been set up. A simulation of the molecular emission spectra has been implemented to investigate the rovibrational population processes of the indium halide molecules. The impact of the cold spot

Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

KAUST Repository

Alshammari, Fwzah Hamud

2017-08-04

Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin-film transistors fabricated with SnO2 gates show excellent transistor properties including saturation mobility of 15.3 cm2 V−1 s−1, a low subthreshold swing of ≈130 mV dec−1, a high on/off ratio of ≈109, and an excellent electrical stability under constant-voltage stressing conditions to the gate terminal. Moreover, the SnO2-gated thin-film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11-stage NMOS inverter-based ring oscillators. These results show that SnO2 can effectively replace ITO in transparent electronics and sensor applications.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Science.gov (United States)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Atom Skimmers and Atom Lasers Utilizing Them

Science.gov (United States)

Hulet, Randall; Tollett, Jeff; Franke, Kurt; Moss, Steve; Sackett, Charles; Gerton, Jordan; Ghaffari, Bita; McAlexander, W.; Strecker, K.; Homan, D.

2005-01-01

Atom skimmers are devices that act as low-pass velocity filters for atoms in thermal atomic beams. An atom skimmer operating in conjunction with a suitable thermal atomic-beam source (e.g., an oven in which cesium is heated) can serve as a source of slow atoms for a magneto-optical trap or other apparatus in an atomic-physics experiment. Phenomena that are studied in such apparatuses include Bose-Einstein condensation of atomic gases, spectra of trapped atoms, and collisions of slowly moving atoms. An atom skimmer includes a curved, low-thermal-conduction tube that leads from the outlet of a thermal atomic-beam source to the inlet of a magneto-optical trap or other device in which the selected low-velocity atoms are to be used. Permanent rare-earth magnets are placed around the tube in a yoke of high-magnetic-permeability material to establish a quadrupole or octupole magnetic field leading from the source to the trap. The atoms are attracted to the locus of minimum magnetic-field intensity in the middle of the tube, and the gradient of the magnetic field provides centripetal force that guides the atoms around the curve along the axis of the tube. The threshold velocity for guiding is dictated by the gradient of the magnetic field and the radius of curvature of the tube. Atoms moving at lesser velocities are successfully guided; faster atoms strike the tube wall and are lost from the beam.

Expectations for prospective applications of new beam technology to atomic energy research

International Nuclear Information System (INIS)

Tomimasu, Takio; Yamazaki, Tetsuo; Tanaka, Ryuichi; Tanigawa, Shoichiro; Konashi, Kenji; Mizumoti, Motoharu.

1991-01-01

Recently, the new beam technology based on high energy electron beam, for example free electron laser, low speed positrons and so on, has developed remarkably. Moreover, also in the field of ion beams, toward the utilization of further high level, the plans of using micro-beams, heightening energy, increasing electric current and so on are in progress. In near future, it is expected that the advanced application of such new beam technology expands more and more in the fields of materials, physical properties, isotope separation, biology, medical science, medical treatment and so on. In this report, placing emphasis on the examples of application, the development and application of new beam technology are described. Takasaki ion accelerators for advanced radiation application in Japan Atomic Energy Research Institute, the generation of low speed positrons and the utilization for physical property studies, the annihilation treatment of long life radioactive nuclides, and the generation of free electron laser and its application are reported. (K.I.)

New beam for the CERN fixed target heavy ion programme

CERN Document Server

Hill, C E; O'Neill, M

2002-01-01

The physicists of the CERN heavy ion community (SPS fixed target physics) have requested lighter ions than the traditional lead ions, to scale their results and to check their theories. Studies have been carried out to investigate the behaviour of the ECR4 for the production of an indium beam. Stability problems and the low melting point of indium required some modifications to the oven power control system which will also benefit normal lead ion production. Present results of the source behaviour and the ion beam characteristics will be presented.

Discrete Energies of a Weakly Outcoupled Atom Laser Beam Outside the Bose–Einstein Condensate Region

Directory of Open Access Journals (Sweden)

Teguh Budi Prayitno

2014-12-01

Full Text Available We consider the possibility of a discrete set of energies of a weakly outcoupled atom laser beam to the homogeneous Schrödinger equation with anisotropic harmonic trap in Cartesian coordinates outside the Bose–Einstein condensate region. This treatment is used because working in the cylindrical coordinates is not really possible, even though we implement the cigar-shaped trap case. The Schrödinger equation appears to replace a set of two-coupled Gross– Pitaevskii equations by enabling the weak-coupling assumption. This atom laser can be produced in a simple way that only involves extracting the atoms in a condensate from by using the radio frequency field. We initially present the relation between condensates as sources and atom laser as an output by exploring the previous work of Riou et al. in the case of theoretical work for the propagation of atom laser beams. We also show that even though the discrete energies are obtained by means of an approaching harmonic oscillator, degeneracy is only available in two states because of the anisotropic external potential

Influence of annealing temperature and environment on the properties of indium tin oxide thin films

International Nuclear Information System (INIS)

Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Kwong, C; Li, S

2005-01-01

Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300 deg. C but drastically drops at 400 deg. C when they are annealed in forming gas (mixed N 2 and H 2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400 deg. C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films

Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes

Energy Technology Data Exchange (ETDEWEB)

Cooperstein, G; Mosher, D; Stephanakis, S J; Weber, B V; Young, F C [Naval Research Laboratory, Washington, DC (United States); Swanekamp, S B [JAYCOR, Vienna, VA (United States)

1997-12-31

Backscattered electrons from anodes with high-atomic-number substrates cause early-time anode-plasma formation from the surface layer leading to faster, more intense electron beam pinching, and lower diode impedance. A simple derivation of Child-Langmuir current from a thin hollow cathode shows the same dependence on the diode aspect ratio as critical current. Using this fact, it is shown that the diode voltage and current follow relativistic Child-Langmuir theory until the anode plasma is formed, and then follows critical current after the beam pinches. With thin hollow cathodes, electron beam pinching can be suppressed at low voltages (< 800 kV) even for high currents and high-atomic-number anodes. Electron beam pinching can also be suppressed at high voltages for low-atomic-number anodes as long as the electron current densities remain below the plasma turn-on threshold. (author). 8 figs., 2 refs.

Laser-induced fluorescence of metal-atom impurities in a neutral beam

International Nuclear Information System (INIS)

Burrell, C.F.; Pyle, R.V.; Sabetimani, Z.; Schlachter, A.S.

1984-10-01

The need to limit impurities in fusion devices to low levels is well known. We have investigated, by the technique of laser-induced fluorescence, the concentration of heavy-metal atoms in a neutral beam caused by their evaporation from the hot filaments in a conventional high-current multifilament hydrogen-ion source

Dependence of ion - photon emission characteristics on the concentration of implanted atoms of the bombarding beam

International Nuclear Information System (INIS)

Belykh, S.F.; Evtukhov, R.N.; Redina, I.V.; Ferleger, V.Kh.

1989-01-01

Results of experiment, where Dy + beams, its spraying products emitting intensively optical radiation with continuous spectrum (CSR), are used for tantalum surface bombardment, are presented. The given experiment allowed one to separate the scattered particle CSR contribution and was conducted under controlled beam n atom concentration on the target surface. E 0 energy and j 0 dysprosium ion flux density made up respectively 3.5 keV and 3x10 5 Axcm -2 . The obtained result analysis has shown that a notable dependence of spectrum type on n value is detected. Dy scattered atoms to not emit CSR. The main contribution to CSR is made by sprayed particles, containing dysprosium atoms

A Solid-Contact Indium(III) Sensor based on a Thiosulfinate Ionophore Derived from Omeprazole

Energy Technology Data Exchange (ETDEWEB)

Abbas, Mohammad Nooredeen; Hend Samy Amer [National Research Centre, Cairo (Egypt)

2013-04-15

A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from 3 Χ 10{sup -7} to 1 Χ 10{sup -2} M and a lower detection limit (LDL) of 1 Χ 10{sup -7} M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.

Electron, ion and atomic beams interaction with solid high-molecular dielectrics

Energy Technology Data Exchange (ETDEWEB)

Milyavskij, V V; Skvortsov, V A [Russian Academy of Sciences, Moscow (Russian Federation). High Energy Density Research Center

1997-12-31

A mathematical model was constructed and numerical investigation performed of the interaction between intense electron, ion and atomic beams and solid high-molecular dielectrics under various boundary conditions. The model is based on equations of the mechanics of continuum, electrodynamics and kinetics, describing the accumulation and relaxation of space charge and shock-wave processes, as well as the evolution of electric field in the sample. A semi-empirical procedure is proposed for the calculation of energy deposition by electron beam in a target in the presence of a non-uniform electric field. (author). 4 figs., 2 refs.

X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

International Nuclear Information System (INIS)

Nelson, A.J.; Aharoni, H.

1987-01-01

X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

Electrical performance of the InGaP solar cell irradiated with low energy electron beams

Energy Technology Data Exchange (ETDEWEB)

Okuno, Yasuki; Okuda, Shuichi; Kojima, Takeo; Oka, Takashi [Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai City, Osaka (Japan); Kawakita, Shirou; Imaizumi, Mitsuru; Kusawake, Hiroaki [Japan Aerospace Exploration Agency (JAXA), 2-1-1 Sengen, Tsukuba, Ibaraki (Japan)

2015-06-15

The investigation of the radiation degradation characteristics of InGaP space solar cells is important. In order to understand the mechanism of the degradation by radiation the samples of the InGaP solar cell were irradiated in vacuum and at ambient temperature with electron beams from a Cockcroft-Walton type accelerator at Osaka Prefecture University. The threshold energies for recoil were obtained by theoretical calculation. The energies and the fluences of the electron beams were from 60 to 400 keV and from 3 x 10{sup 14} to 3 x 10{sup 16} cm{sup -2}, respectively. The light-current-voltage measurements were performed. The degradation of Isc caused by the defects related to the phosphorus atoms was observed and the degradation was suppressed by irradiation at an energy higher than the threshold energy for recoiling Indium atoms. At an energy of 60 keV, where the recoil does not occur, the V{sub oc} was degraded. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Two-color above-threshold ionization of atoms and ions in XUV Bessel beams and intense laser light

Science.gov (United States)

Seipt, D.; Müller, R. A.; Surzhykov, A.; Fritzsche, S.

2016-11-01

The two-color above-threshold ionization (ATI) of atoms and ions is investigated for a vortex Bessel beam in the presence of a strong near-infrared (NIR) light field. While the photoionization is caused by the photons from the weak but extreme ultraviolet (XUV) vortex Bessel beam, the energy and angular distribution of the photoelectrons and their sideband structure are affected by the plane-wave NIR field. We here explore the energy spectra and angular emission of the photoelectrons in such two-color fields as a function of the size and location of the target atoms with regard to the beam axis. In addition, analog to the circular dichroism in typical two-color ATI experiments with circularly polarized light, we define and discuss seven different dichroism signals for such vortex Bessel beams that arise from the various combinations of the orbital and spin angular momenta of the two light fields. For localized targets, it is found that these dichroism signals strongly depend on the size and position of the atoms relative to the beam. For macroscopically extended targets, in contrast, three of these dichroism signals tend to zero, while the other four just coincide with the standard circular dichroism, similar as for Bessel beams with a small opening angle. Detailed computations of the dichroism are performed and discussed for the 4 s valence-shell photoionization of Ca+ ions.

Development and Testing of Atomic Beam-Based Plasma Edge Diagnostics in the CIEMAT Fusion Devices

International Nuclear Information System (INIS)

Tafalla, D.; Tabares, F.L.; Ortiz, P.; Herrero, V.J.; Tanarro, I.

1998-01-01

In this report the development of plasma edge diagnostic based on atomic beam techniques fir their application in the CIEMAT fusion devices is described. The characterisation of the beams in laboratory experiments at the CSIC, together with first results in the Torsatron TJ-II are reported. Two types of beam diagnostics have been developed: a thermal (effusive) Li and a supersonic, pulsed He beams. This work has been carried out in collaboration between the institutions mentioned above under partial financial support by EURATOM. (Author) 17 refs

Kinetic theory of beam-induced plasmas generalised to sophisticated atomic structures

International Nuclear Information System (INIS)

Peyraud-Cuenca, Nelly

1987-01-01

We present an analytic kinetic model available for all particle-beam-induced atomic plasmas, without any restriction on the distribution of electronic levels. The method is an iteration of the already known solution available only for the distribution of atomic levels as in the rare gases. We recall a universal atomic kinetic model which, independently of its applications to the study of efficient laser systems, might be a first step in the analytic investigation of molecular problems. Then, the iteration is systematically applied to all possible atomic structures whose number is increased by the non-local character of inelastic processes. We deduce a general analytic representation of the 'tail' of the electron distribution function as a ratio between non-local source terms and a combination of inelastic cross sections, from which we exhibit a physical interpretation and essential scaling laws. The theory is applied to sodium which is an important element in the research of efficient laser systems. (author)

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Electrical activation and local structure of Se atoms in ion-implanted indium phosphide

International Nuclear Information System (INIS)

Yu, K.M.; Chan, N.; Hsu, L.

1996-01-01

The solid phase regrowth, dopant activation, and local environments of Se-implanted InP are investigated with ion-beam techniques and extended x-ray-absorption fine structure spectroscopy. We find that the local Se endash In structure is already established in the as-implanted amorphous InP although the Se atoms have a lower average coordination number (∼3.5) and no long-range order. After high-temperature rapid thermal annealing (950 degree C, 5 s), the amorphous InP regrows, becoming a single crystal with the Se atoms bonded to four In neighbors; however, only ∼50% of the Se becomes electrically active. Part of the Se precipitates in the form of an In endash Se phase, another part is compensated by defects which are not totally removed by annealing. The Se emdash In bond distance for a Se on a P site is 4.5% longer than the matrix In emdash P bond length, introducing large strains in the crystal. The solid solubility of Se in InP is estimated from our results to be ≅8.7x10 19 /cm 3 while the electron concentration saturates at 5.4x10 19 /cm 3 . Se atoms in InP regrown at lower temperatures in a furnace are only ∼7% electrically active and are found to have different local environments (higher coordination number and shorter bond distance) than those in the InP perfectly regrown at higher temperature. copyright 1996 American Institute of Physics

Laser-spectroscopic nuclear-structure studies on radioactive silver and indium isotopes

International Nuclear Information System (INIS)

Dinger, U.

1988-05-01

Neutron-deficient silver and neutron-rich indium isotopes were studied by collinear laser spectroscopy. The neutron-deficient nuclei 101 , 103 , 104 , 105 , 105m , 106m Ag were produced as evaporation-residual nuclei in heavy-ion fusion reactions at the mass separator of the GSI in Darmstadt. The fourteen studied indium isotopes and isomers with even mass number in the range 112-126 In were produced by 600-MeV-proton induced fission of a uranium carbide target at the ISOLDE separator in Geneva. The mass-separated ion beam was subsequently deviated electrostatically, neutralized in a sodium vapor and superposed with a c w dye laser. A photon counting system detected the resonance fluorescence of the induced transitions. The hyperfine structure and the isotope shift of the 4d 9 5s 2 2 D 5/2 → 4d 10 6p 2 P 3/2 transition (λ=547.7 nm) in silver and the 5p 2 P 1/2,3/2 → 6s 2 s 1/2 transition (λ=410 respectively 451 nm) in indium were measured. While in indium for the analysis of the data earlier work could be referred to, in silver a detailed analysis of the isotope shift and hyperfine structure was performed by means of ab initio calculations and semi-empirical procedures. Thereby the configuration interactions were especially considered. The nuclear moments were discussed in the framework of existing nuclear models regarding nuclear-spectroscopic informations. (orig./HSI) [de

Bright focused ion beam sources based on laser-cooled atoms

Science.gov (United States)

McClelland, J. J.; Steele, A. V.; Knuffman, B.; Twedt, K. A.; Schwarzkopf, A.; Wilson, T. M.

2016-01-01

Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga+ liquid metal ion source. In this review we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future. PMID:27239245

Bright focused ion beam sources based on laser-cooled atoms

Energy Technology Data Exchange (ETDEWEB)

McClelland, J. J.; Wilson, T. M. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Steele, A. V.; Knuffman, B.; Schwarzkopf, A. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); zeroK NanoTech, Gaithersburg, Maryland 20878 (United States); Twedt, K. A. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Maryland Nanocenter, University of Maryland, College Park, Maryland 20742 (United States)

2016-03-15

Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga{sup +} liquid metal ion source. In this review, we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future.

Indium and gallium diffusion through zirconia in the TiN/ZrO{sub 2}/InGaAs stack

Energy Technology Data Exchange (ETDEWEB)

Ceballos-Sanchez, O. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico); Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Martinez, E.; Guedj, C.; Veillerot, M. [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Herrera-Gomez, A. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico)

2015-06-01

Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO{sub 2}/InGaAs stack to assess its thermal stability. Through a robust ARXPS analysis, it was possible to observe subtle effects such as the thermally induced diffusion of substrate atomic species (In and Ga) through the dielectric layer. The detailed characterization of the film structure allowed for assessing the depth profiles of the diffused atomic species by means of the scenarios-method. Since the quantification for the amount of diffused material was done at different temperatures, it was possible to obtain an approximate value of the activation energy for the diffusion of indium through zirconia. The result is very similar to the previously reported values for indium diffusion through alumina and through hafnia.

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

International Nuclear Information System (INIS)

Chen Peng; An Zhenghua; Zhu Ming; Fu, Ricky K.Y.; Chu, Paul K.; Montgomery, Neil; Biswas, Sukanta

2004-01-01

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10 14 cm -2 ) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure

Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

International Nuclear Information System (INIS)

Kuo, C.C.; Liu, C.C.; Lin, C.C.; Liou, Y.Y.; He, J.L.; Chen, F.S.

2008-01-01

The purpose of the present work is to experimentally study the effects of the oxygen gas flow rate and ion beam plasma conditions on the properties of indium molybdenum oxide (IMO) films deposited onto the polyethersulfone (PES) substrate. Crystal structure, surface morphology, and optoelectronic properties of IMO films are examined as a function of oxygen gas flow rate and ion beam discharge voltage. Experimental results show that the IMO films consist of a cubic bixbyite B-In 2 O 3 single phase with its crystal preferred orientation alone B(222). Mo 6+ ions are therefore considered to partially substitute In 3+ sites in the deposit. Under-controlled ion bombardment during deposition enhances the reaction among those arriving oxygen and metal ion species to condense into IMO film and facilitates a decreased surface roughness of IMO film. The film with ultimate crystallinity and the lowest surface roughness is obtained when the oxygen flow rate of 3 sccm and the discharge voltage of 110 V are employed. This results in the lowest electrical resistivity due mainly to the increased Hall mobility and irrelevant to carrier concentration. The lowest electrical resistivity of 8.63 x 10 -4 ohm-cm with a 84.63% transmittance at a wavelength of 550 nm can be obtained, which satisfies the requirement of a flexible transparent conductive polymer substrate

Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback

Science.gov (United States)

Jesse, Stephen; Hudak, Bethany M.; Zarkadoula, Eva; Song, Jiaming; Maksov, Artem; Fuentes-Cabrera, Miguel; Ganesh, Panchapakesan; Kravchenko, Ivan; Snijders, Panchapakesan C.; Lupini, Andrew R.; Borisevich, Albina Y.; Kalinin, Sergei V.

2018-06-01

Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore’s law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

Direct atomic fabrication and dopant positioning in Si using electron beams with active real-time image-based feedback.

Science.gov (United States)

Jesse, Stephen; Hudak, Bethany M; Zarkadoula, Eva; Song, Jiaming; Maksov, Artem; Fuentes-Cabrera, Miguel; Ganesh, Panchapakesan; Kravchenko, Ivan; Snijders, Panchapakesan C; Lupini, Andrew R; Borisevich, Albina Y; Kalinin, Sergei V

2018-06-22

Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant front motion. These phenomena are visualized in real-time with atomic resolution. We further implement active feedback control based on real-time image analytics to automatically control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.

Small lead and indium inclusions in aluminium

International Nuclear Information System (INIS)

Johnson, E.; Hjemsted, K.; Schmidt, B.; Bourdelle, K.K.; Johansen, A.; Andersen, H.H.; Sarholt-Kristensen, L.

1992-01-01

This paper reports implantation of lead or indium into aluminum results in spontaneous phase separation and formation of lead or indium precipitates. The precipitates grow in topotactical alignment with the matrix, giving TEM images characterized by moire fringes. The size and density of the precipitates increase with increasing fluence until coalescence begins to occur. Implantation at elevated temperatures lead to formation of large precipitates with well developed facets. This is particularly significant for implantation above the bulk melting point of the implanted species. Melting and solidification have been followed by in-situ TEM heating and cooling experiments. Superheating up to ∼50 K above the bulk melting point has been observed, and the largest inclusions melt first. Melting is associated with only partial loss of facetting of the largest inclusion. Initial growth of the inclusions occurs by trapping of atoms retained in supersaturated solution. Further growth occurs by coalescence of neighboring inclusion in the liquid phase. Solidification is accompanied by a strong undercooling ∼30 K below the bulk melting point, where the smallest inclusions solidify first. Solidification is characterized by spontaneous restoration of the facets and the topotactical alignment

l- and n-changing collisions during interaction of a pulsed beam of Li Rydberg atoms with CO2

Science.gov (United States)

Dubreuil, B.; Harnafi, M.

1989-07-01

The pulsed Li atomic beam produced in our experiment is based on controlled transversely-excited-atmospheric CO2 laser-induced ablation of a Li metal target. The atomic beam is propagated in vacuum or in CO2 gas at low pressure. Atoms in the beam are probed by laser-induced fluorescence spectroscopy. This allows the determination of time-of-flight and velocity distributions. Li Rydberg states (n=5-13) are populated in the beam by two-step pulsed-laser excitation. The excited atoms interact with CO2 molecules. l- and n-changing cross sections are deduced from the time evolution of the resonant or collision-induced fluorescence following this selective excitation. l-changing cross sections of the order of 104 AṦ are measured; they increase with n as opposed to the plateau observed for Li* colliding with a diatomic molecule. This behavior is qualitatively well explained in the framework of the free-electron model. n-->n' changing processes with large cross sections (10-100 AṦ) are also observed even in the case of large electronic energy change (ΔEnn'>103 cm-1). These results can be interpreted in terms of resonant-electronic to vibrational energy transfers between Li Rydberg states and CO2 vibrational modes.

Collimation of a thulium atomic beam by two-dimensional optical molasses

Energy Technology Data Exchange (ETDEWEB)

Sukachev, D D; Kalganova, E S; Sokolov, A V; Savchenkov, A V; Vishnyakova, G A; Golovizin, A A; Akimov, A V; Kolachevsky, Nikolai N; Sorokin, Vadim N

2013-04-30

The number of laser cooled and trapped thulium atoms in a magneto-optical trap is increased by a factor of 3 using a two-dimensional optical molasses which collimated the atomic beam before entering a Zeeman slower. A diode laser operating at 410.6 nm was employed to form optical molasses: The laser was heated to 70 Degree-Sign C by a two-step temperature stabilisation system. The laser system consisting of a master oscillator and an injection-locked amplifier emitted more than 100 mW at 410 nm and had a spectral linewidth of 0.6 MHz. (extreme light fields and their applications)

Molecular beam studies of oxide reduction by atomic hydrogen

International Nuclear Information System (INIS)

Olander, D.R.

1978-01-01

The graphite and oxide internals of a CTR are susceptible to chemical corrosion as well as to physical degradation by high-energy particles. Reactions of thermal atomic hydrogen with oxides are being studied. The hydrogen used is at thermal energy (0.22 eV). Typical data are reported for the H/UO 2 system. The reaction probability is plotted as a function of solid temperature at fixed beam intensity and moculation frequency. The reaction probability increases from low temperature to a high-temperature plateau at about 1300 0 C. Here the reaction rate is limited solely by the sticking probability of H on the surface; about one in seven of the incident atoms is chemisorbed by the surface and ultimately returns to the gas phase as water vapor. A reaction model comprising sticking, recombination to H 2 , solution and diffusion of H in the bulk of the UO 2 , surface reaction of adsorbed H with lattice oxygen atoms to produce the hydroxyl radical, and production of water is constructed. The rate constants for the elementary steps in the mechanism are tabulated. 2 figures, 2 tables

Atomic fusion, Gerrard atomic fusion

International Nuclear Information System (INIS)

Gerrard, T.H.

1980-01-01

In the approach to atomic fusion described here the heat produced in a fusion reaction, which is induced in a chamber by the interaction of laser beams and U.H.F. electromagnetic beams with atom streams, is transferred to a heat exchanger for electricity generation by a coolant flowing through a jacket surrounding the chamber. (U.K.)

Synthesis, characterization, and bonding of indium cluster phases: Na15In27.4, a network of In16 and In11 clusters; Na2In with isolated indium tetrahedra

International Nuclear Information System (INIS)

Sevov, S.C.; Corbett, J.D.

1993-01-01

The remaining phases in the Na-In system have been identified and characterized. The indium-richest is Na 15 In 27.4 , with a structure containing novel closo-In 16 clusters interconnected to two kinds of nido-In 11 units and isolated, 4-bonded atoms (Cmcm, Z = 8, a = 16.108 (4) Angstrom, b = 35.279 (8) Angstrom, c = 15.931 (3) Angstrom, R/R w = 0.041/0.044 at the indium-rich limits Na 15 In 27.54 ). Fractional occupancy of two atoms in cluster chain positions were found, one as a function of a narrow nonstoichiometry. The structure is related to that recently established for Na 7 In 11.8 . Resistivity and magnetic properties are consistent with a small (0.5-3.2%) excess of electrons relative to the calculated bonding requirements. The sodium-richest phase is the stable, diamagnetic, and weakly metallic Na 2 In, isostructural with Na 2 Tl (C222 1 , Z = 16, a = 13.855 (1) Angstrom, b = 8.836 (1) Angstrom, c = 11.762 (1) Angstrom, R/R w = 0.030/0.034). A corrected phase diagram is given. 21 refs., 5 figs., 5 tabs

Structured mirror array for two-dimensional collimation of a chromium beam in atom lithography

International Nuclear Information System (INIS)

Zhang Wan-Jing; Ma Yan; Li Tong-Bao; Zhang Ping-Ping; Deng Xiao; Chen Sheng; Xiao Sheng-Wei

2013-01-01

Direct-write atom lithography, one of the potential nanofabrication techniques, is restricted by some difficulties in producing optical masks for the deposition of complex structures. In order to make further progress, a structured mirror array is developed to transversely collimate the chromium atomic beam in two dimensions. The best collimation is obtained when the laser red detunes by natural line-width of transition 7 S 3 → 7 P 0 4 of the chromium atom. The collimation ratio is 0.45 vertically (in x axis), and it is 0.55 horizontally (in y axis). The theoretical model is also simulated, and success of our structured mirror array is achieved. (atomic and molecular physics)

Deflection of atomic beams with isotope separation by optical resonance radiation using stimulated emission and the ac stark effect

International Nuclear Information System (INIS)

Bjorkholm, J.E.; Liao, P.F.H.

1977-01-01

Improved atomic beam deflection and improved isotope separation, even in vapors, is proposed by substituting the A.C. Stark effect for the baseband chirp of the pushing beam in the prior proposal by I. Nebenzahl et al., Applied Physics Letters, Vol. 25, page 327 (September 1974). The efficiency inherent in re-using the photons as in the Nebenzahl et al proposal is retained; but the external frequency chirpers are avoided. The entire process is performed by two pulses of monochromatic coherent light, thereby avoiding the complication of amplifying frequency-modulated light pulses. The A.C. Stark effect is provided by the second beam of coherent monochromatic light, which is sufficiently intense to chirp the energy levels of the atoms or isotopes of the atomic beam or vapor. Although, in general, the A.C. Stark effect will alter the isotope shift somewhat, it is not eliminated. In fact, the appropriate choice of frequencies of the pushing and chirping beams may even relax the requirements with respect to the isotope absorption line shift for effective separation. That is, it may make the isotope absorption lines more easily resolvable

Production of atomic negative ion beams of the Group IA elements

International Nuclear Information System (INIS)

Alton, G.D.; Mills, G.D.

1988-01-01

A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li - : ≥0.5 μA; Na - : ≥0.5 μA; K - : ≥0.5 μA; Rb - : ≥0.5 μA; Cs - : ≥0.2 μA. 7 refs., 2 figs., 1 tab

Status of the hydrogen and deuterium atomic beam polarized target for NEPTUN experiment

International Nuclear Information System (INIS)

Balandikov, N.I.; Ershov, V.P.; Fimushkin, V.V.; Kulikov, M.V.; Pilipenko, Y.K.; Shutov, V.B.

1995-01-01

NEPTUN-NEPTUN-A is a polarized experiment at Accelerating and Storage Complex (UNK, IHEP) with two internal targets. Status of the atomic beam polarized target that is being developed at the Joint Institute for Nuclear Research, Dubna is presented. copyright 1995 American Institute of Physics

Reaction mechanism of oxygen atoms with unsaturated hydrocarbons by the crossed molecular beams method

Energy Technology Data Exchange (ETDEWEB)

Buss, R.J.; Baseman, R.J.; Guozhong, H.; Lee, Y.T.

1982-04-01

From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

Science.gov (United States)

Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

1982-04-01

From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

International Nuclear Information System (INIS)

Tang, Fengzai; Zhu, Tongtong; Oehler, Fabrice; Fu, Wai Yuen; Griffiths, James T.; Massabuau, Fabien C.-P.; Kappers, Menno J.; Oliver, Rachel A.; Martin, Tomas L.; Bagot, Paul A. J.; Moody, Michael P.

2015-01-01

Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

Energy Technology Data Exchange (ETDEWEB)

Tang, Fengzai; Zhu, Tongtong; Oehler, Fabrice; Fu, Wai Yuen; Griffiths, James T.; Massabuau, Fabien C.-P.; Kappers, Menno J.; Oliver, Rachel A., E-mail: rao28@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Martin, Tomas L.; Bagot, Paul A. J.; Moody, Michael P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

2015-02-16

Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.

Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

1998-11-27

Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

Angular distributions of atomic vapor stream produced by electron beam heating

International Nuclear Information System (INIS)

Ohba, Hironori; Amekawa, Kazuhiro; Shibata, Takemasa

1997-03-01

The angular distributions were measured as a function of deposition rate for aluminium, copper, gadolinium and cerium vapor stream produced by an electron beam gun with water-cooled copper crucible. The distributions were recorded on the mounted on a semicircular (120mm in radius) mask over the evaporation source. The measured distributions were able to be described by a simple cosine law, that is cos n θ, except for the case of extremely high evaporation rate with a porous material, where n is a rate-dependent beaming exponent, θ is the angle from the vertical. For many kinds of evaporants, it was confirmed that the beaming exponents increase continuously from unity to 3 or 4 with increasing deposition rate and are approximately proportional to R 0.25 where R is the deposition rate. Moreover, it was found that the beaming exponents n are able to be expressed as n = α Kn 0 -0.25 , where Kn 0 -1 is the inverse of Knudsen number, which is defined by the mean free path of evaporated atoms and the evaporation spot size, and α is the constant. (author)

Angular distributions of atomic vapor stream produced by electron beam heating

Energy Technology Data Exchange (ETDEWEB)

Ohba, Hironori; Amekawa, Kazuhiro; Shibata, Takemasa [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1997-03-01

The angular distributions were measured as a function of deposition rate for aluminium, copper, gadolinium and cerium vapor stream produced by an electron beam gun with water-cooled copper crucible. The distributions were recorded on the mounted on a semicircular (120mm in radius) mask over the evaporation source. The measured distributions were able to be described by a simple cosine law, that is cos{sup n} {theta}, except for the case of extremely high evaporation rate with a porous material, where n is a rate-dependent beaming exponent, {theta} is the angle from the vertical. For many kinds of evaporants, it was confirmed that the beaming exponents increase continuously from unity to 3 or 4 with increasing deposition rate and are approximately proportional to R{sup 0.25} where R is the deposition rate. Moreover, it was found that the beaming exponents n are able to be expressed as n = {alpha} Kn{sub 0}{sup -0.25}, where Kn{sub 0}{sup -1} is the inverse of Knudsen number, which is defined by the mean free path of evaporated atoms and the evaporation spot size, and {alpha} is the constant. (author)

Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

International Nuclear Information System (INIS)

Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

2012-01-01

In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide (α-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R s measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the α-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in α-IGZO was dramatically increased, contributing to the decrease of resistivity (ρ) from 1.96 Ω cm (as-deposited α-IGZO) to 1.33 × 10 −3 Ω cm (350 °C annealed α-IGZO).

Indium recovery by solvent extraction

International Nuclear Information System (INIS)

Fortes, Marilia Camargos Botelho

1999-04-01

Indium has been recovered as a byproduct from residues generated from the sulfuric acid leaching circuits in mineral plants for zinc recovery. Once its recovery comes from the slags of other metals recovery, it is necessary to separate it from the other elements which usually are present in high concentrations. Many works have been approaching this separation and indicate the solvent extraction process as the main technique used. In Brazilian case, indium recovery depends on the knowledge of this technique and its development. This paper describes the solvent extraction knowledge for the indium recovery from aqueous solutions generated in mineral plants. The results for determination of the best experimental conditions to obtain a high indium concentration solution and minimum iron poisoning by solvent extraction with di (2-ethylhexyl)-phosphoric acid (D2EHPA) solubilized in isoparafin and exxsol has been presented. (author)

Preparation of trialkylindium by alkylation of metallic indium

International Nuclear Information System (INIS)

Eremeev, I.V.; Danov, S.M.; Sakhipov, V.R.

1995-01-01

The investigation results on production of trialkyl indium by alkylation of metallic indium are presented. In contradistinction to the known techniques for the production of trialkyls on indium by alkylation it is suggested to separate the synthesis into two steps. At the first step indium is alkylated by alkylhalide to alkyl indium halide, and at the second alkylation is carried out using. Grignard reagent. The techniques for preparation of trimethyl- and triethylindium, developed on the bases of this scheme, are noted for good reproducibility, allow to preclude, agglomeration of indium during the synthesis, as well as to reduce the consumption coefficients, and amounts, of the introduced starting reagents, i.e. magnesium and alkylhalide. Refs. 16

Atomic collisions related to atomic laser isotope separation

International Nuclear Information System (INIS)

Shibata, Takemasa

1995-01-01

Atomic collisions are important in various places in atomic vapor laser isotope separation (AVLIS). At a vaporization zone, many atomic collisions due to high density have influence on the atomic beam characteristics such as velocity distribution and metastable states' populations at a separation zone. In the separation zone, a symmetric charge transfer between the produced ions and the neutral atoms may degrade selectivity. We have measured atomic excitation temperatures of atomic beams and symmetric charge transfer cross sections for gadolinium and neodymium. Gadolinium and neodymium are both lanthanides. Nevertheless, results for gadolinium and neodymium are very different. The gadolinium atom has one 5d electron and neodymium atom has no 5d electron. It is considered that the differences are due to existence of 5d electron. (author)

Composition dependence of the thermodynamic activity and lattice parameter of zeta nickel-indium

International Nuclear Information System (INIS)

Bhattacharya, B.; Masson, D.B.

1976-01-01

The vapor pressure of indium over six alloys in the zeta phase of the nickel-indium system was measured by the method of atomic absorption. Values of thermodynamic activity were calculated from the vapor pressure, and partial heat and entropy of indium were calculated from the temperature coefficients. The lattice parameters of the hexagonal B8 2 unit cell of all alloys were calculated from X-ray diffraction powder patterns. It was found that the a lattice parameter passed through a minimum at the same composition that the excess chemical potential showed a sharp change of slope, when graphed as a function of composition. These effects were similar to those observed previously which have been attributed to overlap by the Fermi surface of a Brillouin zone face. In the present case they were attributed to overlap of the Fermi surface across faces tentatively identified as the [110] faces of the Brillouin zone of the B8 2 structure. The influence of substitutional disorder was also considered as a cause of the thermodynamic effects, but this was rejected because it does not explain the minimum in lattice parameter. (Auth.)

Gallium-Indium ordering in the complex [Ni{sub 2}Ga{sub 3}In] network of GdNi{sub 2}Ga{sub 3}In

Energy Technology Data Exchange (ETDEWEB)

Galadzhun, Yaroslav V.; Horiacha, Myroslava M.; Nychyporuk, Galyna P.; Zaremba, Vasyl I. [Inorganic Chemistry Department, Ivan Franko National University of Lviv (Ukraine); Rodewald, Ute C.; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany)

2016-08-15

Polycrystalline samples of the isotypic quaternary compounds RENi{sub 2}Ga{sub 3}In (RE = Y, Gd - Tm) were obtained by arc-melting of the elements. Crystals of the gadolinium compound were found by slow cooling of an arc-melted button of the initial composition ''GdNiGa{sub 3}In''. All samples were characterized by powder X-ray diffraction. The structure of GdNi{sub 2}Ga{sub 2.89}In{sub 1.11} was refined from single-crystal X-ray diffractometer data: new type, Pnma, a = 2426.38(7), b = 418.17(2), c = 927.27(3) pm, wR{sub 2} = 0.0430, 1610 F{sup 2} values and 88 variables. Two of the six crystallographically independent gallium sites show a small degree of Ga/In mixing. The nickel atoms show tricapped trigonal prismatic coordination by gadolinium, gallium, and indium. Together, the nickel, gallium, and indium atoms build up a complex three-dimensional [Ni{sub 2}Ga{sub 3}In]{sup δ-} network, which leaves cages for the gadolinium atoms. The indium atoms form zigzag chains with In-In distances of 337 pm. The crystal chemical similarities of the polyhedral packing in the GdNi{sub 2}Ga{sub 3}In and La{sub 4}Pd{sub 10}In{sub 21} structures are discussed. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electron capture in slow collisions of multicharged ions with hydrogen atoms using merged beams

International Nuclear Information System (INIS)

Havener, C.C.; Nesnidal, M.P.; Porter, M.R.; Phaneuf, R.A.

1991-01-01

Absolute total electron-capture cross-section mesurements are reported for collisions of O 3+ and O 4+ with atomic hydrogen in the energy range 1-1000 eV /amu using merged beams. The data are compared with available coupled-states theoretical calculations. (orig.)

Mass measurements of neutron-rich indium isotopes toward the N =82 shell closure

Science.gov (United States)

Babcock, C.; Klawitter, R.; Leistenschneider, E.; Lascar, D.; Barquest, B. R.; Finlay, A.; Foster, M.; Gallant, A. T.; Hunt, P.; Kootte, B.; Lan, Y.; Paul, S. F.; Phan, M. L.; Reiter, M. P.; Schultz, B.; Short, D.; Andreoiu, C.; Brodeur, M.; Dillmann, I.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.; Dilling, J.

2018-02-01

Precise mass measurements of the neutron-rich In-130125 isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q =13 + thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. In this paper, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z =50 ). In addition, the energies of the indium isomers are presented. The (8-) level in 128In is found to be 78 keV lower than previously thought and the (21 /2- ) isomer in 127In is shown to be lower than the literature value by more than 150 keV.

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

Energy Technology Data Exchange (ETDEWEB)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

Interferometry with atoms

International Nuclear Information System (INIS)

Helmcke, J.; Riehle, F.; Witte, A.; Kisters, T.

1992-01-01

Physics and experimental results of atom interferometry are reviewed and several realizations of atom interferometers are summarized. As a typical example of an atom interferometer utilizing the internal degrees of freedom of the atom, we discuss the separated field excitation of a calcium atomic beam using four traveling laser fields and demonstrate the Sagnac effect in a rotating interferometer. The sensitivity of this interferometer can be largely increased by use of slow atoms with narrow velocity distribution. We therefore furthermore report on the preparation of a laser cooled and deflected calcium atomic beam. (orig.)

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

International Nuclear Information System (INIS)

Li, Li; Liu, Honglin; Zou, Lin; Ding, Wanyu; Ju, Dongying; Chai, Weiping

2013-01-01

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

Energy Technology Data Exchange (ETDEWEB)

Li, Li; Liu, Honglin; Zou, Lin [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Ding, Wanyu, E-mail: dwysd_2000@163.com [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116028 (China); Ju, Dongying [Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan); Chai, Weiping [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)

2013-10-31

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

High energy-intensity atomic oxygen beam source for low earth orbit materials degradation studies

International Nuclear Information System (INIS)

Cross, J.B.; Blais, N.C.

1988-01-01

A high intensity (10 19 O-atoms/s-sr) high energy (5 eV) source of oxygen atoms has been developed that produces a total fluence of 10 22 O-atoms/cm 2 in less than 100 hours of continuous operation at a distance of 15 cm from the source. The source employs a CW CO 2 laser sustained discharge to form a high temperature (15,000 K) plasma in the throat of a 0.3-mm diameter nozzle using 3--8 atmospheres of rare gas/O 2 mixtures. Visible and infrared photon flux levels of 1 watt/cm 2 have been measured 15 cm downstream of the source while vacuum UV (VUV) fluxes are comparable to that measured in low earth orbit. The reactions of atomic oxygen with kapton, Teflon, silver, and various coatings have been studied. The oxidation of kapton (reaction efficiency = 3 /times/ 10/sup /minus/24/ cm /+-/ 50%) has an activation energy of 0.8 Kcal/mole over the temperature range of 25/degree/C to 100/degree/C at a beam energy of 1.5 eV and produces low molecular weight gas phase reaction products (H 2 O, NO, CO 2 ). Teflon reacts with ∼0.1--0.2 efficiency to that of kapton at 25/degree/C and both surfaces show a rug-like texture after exposure to the O-atom beam. Angular scattering distribution measurements of O-atoms show a near cosine distribution from reactive surfaces indicating complete accommodation of the translational energy with the surface while a nonreactive surface (nickel oxide) shows specular-like scattering with 50% accommodation of the translational energy with the surface. A technique for simple on orbit chemical experiments using resistance measurements of coated silver strips is described. 9 figs

Surface enhanced Raman scattering in organic thin films covered with silver, indium and magnesium

International Nuclear Information System (INIS)

Salvan, Georgeta; Zahn, Dietrich R.T.; Paez, Beynor

2004-01-01

In situ resonant Raman spectroscopy was applied for the investigation of the interface formation between silver, indium and magnesium with polycrystalline organic semiconductor layers of 3,4,9,10-perylene tetra-carboxylic dianhydride (PTCDA). The spectral region of internal as well as external vibrational modes was recorded in order to achieve information related to the chemistry and the structure of the interface as well as to morphology of the metal layer. The experiments benefit from a strong enhancement of the internal mode scattering intensities which is induced by the rough morphology of deposited metals leading to surface enhanced Raman scattering (SERS). The external modes, on the other hand, are attenuated at different rates indicating that the diffusion of the metal atoms into the crystalline layers is highest for indium and lowest for magnesium

Nanomechanical Characterization of Indium Nano/Microwires

Directory of Open Access Journals (Sweden)

N Kiran MSR

2010-01-01

Full Text Available Abstract Nanomechanical properties of indium nanowires like structures fabricated on quartz substrate by trench template technique, measured using nanoindentation. The hardness and elastic modulus of wires were measured and compared with the values of indium thin film. Displacement burst observed while indenting the nanowire. ‘Wire-only hardness’ obtained using Korsunsky model from composite hardness. Nanowires have exhibited almost same modulus as indium thin film but considerable changes were observed in hardness value.

Procedure for 40K isotope separation from beam of potassium atoms using optical orientation of atoms and radio-frequency excitation of target isotope

International Nuclear Information System (INIS)

Nikitin, A.I.; Velichko, A.M.; Vnukov, A.V.; Mal'tsev, K.K.; Nabiev, Sh.Sh.

1999-01-01

The procedure for potassium isotope separation, which is liable to reduce of the prise of the product as compared with the up-to-date prise of the 40 K isotope obtained by means of electromagnetic procedure for isotope separation, is proposed. The scheme assumes the increasing flow of the wanted isotope at the sacrifice of the increasing intensity of atomic beam and the increase of the selectivity of need isotope atoms at the sacrifice of the the reduction in the square of collector profile. The objective is achieved that provide of polarized state of the potassium atoms is produced by optic orientation with circular-polarized light [ru

Indium hydroxide to oxide decomposition observed in one nanocrystal during in situ transmission electron microscopy studies

Science.gov (United States)

Miehe, Gerhard; Lauterbach, Stefan; Kleebe, Hans-Joachim; Gurlo, Aleksander

2013-02-01

The high-resolution transmission electron microscopy (HR-TEM) is used to study, in situ, spatially resolved decomposition in individual nanocrystals of metal hydroxides and oxyhydroxides. This case study reports on the decomposition of indium hydroxide (c-In(OH)3) to bixbyite-type indium oxide (c-In2O3). The electron beam is focused onto a single cube-shaped In(OH)3 crystal of {100} morphology with ca. 35 nm edge length and a sequence of HR-TEM images was recorded during electron beam irradiation. The frame-by-frame analysis of video sequences allows for the in situ, time-resolved observation of the shape and orientation of the transformed crystals, which in turn enables the evaluation of the kinetics of c-In2O3 crystallization. Supplementary material (video of the transformation) related to this article can be found online at 10.1016/j.jssc.2012.09.022. After irradiation the shape of the parent cube-shaped crystal is preserved, however, its linear dimension (edge) is reduced by the factor 1.20. The corresponding spotted selected area electron diffraction (SAED) pattern representing zone [001] of c-In(OH)3 is transformed to a diffuse strongly textured ring-like pattern of c-In2O3 that indicates the transformed cube is no longer a single crystal but is disintegrated into individual c-In2O3 domains with the size of about 5-10 nm. The induction time of approximately 15 s is estimated from the time-resolved Fourier transforms. The volume fraction of the transformed phase (c-In2O3), calculated from the shrinkage of the parent c-In(OH)3 crystal in the recorded HR-TEM images, is used as a measure of the kinetics of c-In2O3 crystallization within the framework of Avrami-Erofeev formalism. The Avrami exponent of ˜3 is characteristic for a reaction mechanism with fast nucleation at the beginning of the reaction and subsequent three-dimensional growth of nuclei with a constant growth rate. The structural transformation path in reconstructive decomposition of c-In(OH)3 to c

Charge steering of laser plasma accelerated fast ions in a liquid spray — creation of MeV negative ion and neutral atom beams

International Nuclear Information System (INIS)

Schnürer, M.; Abicht, F.; Priebe, G.; Braenzel, J.; Prasad, R.; Borghesi, M.; Andreev, A.; Nickles, P. V.; Jequier, S.; Tikhonchuk, V.; Ter-Avetisyan, S.

2013-01-01

The scenario of “electron capture and loss” has been recently proposed for the formation of negative ion and neutral atom beams with up to MeV kinetic energy [S. Ter-Avetisyan, et al., Appl. Phys. Lett. 99, 051501 (2011)]. Validation of these processes and of their generic nature is here provided in experiments where the ion source and the interaction medium have been spatially separated. Fast positive ions accelerated from a laser plasma source are sent through a cold spray where their charge is changed. Such formed neutral atom or negative ion has nearly the same momentum as the original positive ion. Experiments are released for protons, carbon, and oxygen ions and corresponding beams of negative ions and neutral atoms have been obtained. The electron capture and loss phenomenon is confirmed to be the origin of the negative ion and neutral atom beams. The equilibrium ratios of different charge components and cross sections have been measured. Our method is general and allows the creation of beams of neutral atoms and negative ions for different species which inherit the characteristics of the positive ion source

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

OpenAIRE

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

2016-01-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

Atomic spin resonance in a rubidium beam obliquely incident to a transmission magnetic grating

International Nuclear Information System (INIS)

Hatakeyama, A; Goto, K

2016-01-01

We studied atomic spin resonance induced by atomic motion in a spatially periodic magnetostatic field. A rubidium atomic beam, with a velocity of about 400 m s −1 , was obliquely incident to a transmission magnetic grating that produced a spatially periodic magnetic field. The magnetic grating was formed by a magnetic thin film on a polyimide substrate that had multiple slits at 150 μm intervals. The atoms experienced field oscillation, depending on their velocity and the field period when passing through the grating, and underwent magnetic resonance. Resonance spectra obtained with a perpendicular magnetization film were in clear contrast to ones obtained with an in-plane magnetization film. The former exhibited resonance peaks at odd multiples of the frequency, determined by the velocity over the period, while the latter had dips at the same frequencies. (paper)

Nano-fabrication of diffractive optics for soft X-ray and atom beam focusing

International Nuclear Information System (INIS)

Rehbein, S.

2002-01-01

Nano-structuring processes are described for manufacturing diffractive optics for the condenser-monochromator set-up of the transmission X-ray microscope (TXM) and for the scanning transmission X-ray microscope (STXM) at the BESSY II electron storage ring in Berlin. Furthermore, a process for manufacturing free-standing nickel zone plates for helium atom beam focusing experiments is presented. (author)

A study of the kinetics and mechanisms of electrocrystallization of indium oxide on an in situ prepared metallic indium electrode

International Nuclear Information System (INIS)

Omanovic, S.; Metikos-Hukovic, M.

2004-01-01

The mechanisms and kinetics of nucleation and growth of indium oxide film on an in situ prepared metallic indium electrode was studied in a borate buffer solution of pH 10.0 using cyclic voltammetry and chroanoamperometry techniques. It was shown that the initial stage of nucleation of the oxide film includes a three-dimensional progressive nucleation process, combined with a diffusion-controlled growth of the stable indium oxide crystals. The thermodynamic data obtained indicated a strong tendency of indium to form an indium oxide film on its surface in an aqueous solution. It was found that the rate-determining step in the nucleation and growth process is the surface diffusion of electroactive species. The nucleation rate constant, and the number of nucleation active sites were calculated independently. It was shown that between 2 and 15% of sites on the indium surface act as active nucleation centers, and that each active site represents a critical nucleus

Chemical states of localized Fe atoms in ethylene matrices using in-beam Mössbauer spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Y., E-mail: kyoshio@pc.uec.ac.jp [University of Electro-Communications, Graduate School of Engineering Science (Japan); Yamada, Y. [Tokyo University of Science, Department of Chemistry (Japan); Tanigawa, S. [University of Electro-Communications, Graduate School of Engineering Science (Japan); Mihara, M. [Osaka University, Graduate School of Science (Japan); Kubo, M. K. [International Christian University, Division of Arts and Sciences (Japan); Sato, W. [Kanazawa University, Institute of Science and Engineering (Japan); Miyazaki, J. [Tokyo University of Agriculture and Technology, Department of Chemical Engineering (Japan); Nagatomo, T. [RIKEN, Nishina Center for Accelerator-Based Science (Japan); Sato, Y.; Natori, D.; Suzuki, M. [University of Electro-Communications, Graduate School of Engineering Science (Japan); Kobayashi, J. [International Christian University, Division of Arts and Sciences (Japan); Sato, S.; Kitagawa, A. [National Institute of Radiological Science (Japan)

2016-12-15

The reaction products of isolated single iron atoms in a low concentration matrix of ethylene were studied using in-beam Mössbauer spectroscopy with a short-lived {sup 57}Mn (T{sub 1/2}=1.45 m) beam. The in-beam Mössbauer spectrum of {sup 57}Fe arising from {sup 57}Mn in a matrix of ethylene and argon measured at 16 K was analyzed with four components. Density functional theory calculations were carried out to confirm the assignments. It was suggested that the reaction produced monoiron species of Fe(C {sub 2}H{sub 4}) with a spin state of S = 2.

Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

International Nuclear Information System (INIS)

Krantz, Claude

2009-01-01

We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

Intense electron beams from GaAs photocathodes as a tool for molecular and atomic physics

Energy Technology Data Exchange (ETDEWEB)

Krantz, Claude

2009-10-28

We present cesium-coated GaAs photocathodes as reliable sources of intense, quasi-monoenergetic electron beams in atomic and molecular physics experiments. In long-time operation of the Electron Target of the ion storage ring TSR in Heidelberg, cold electron beams could be realised at steadily improving intensity and reliability. Minimisation of processes degrading the quantum efficiency allowed to increase the extractable current to more than 1mA at usable cathode lifetimes of 24 h or more. The benefits of the cold electron beam with respect to its application to electron cooling and electron-ion recombination experiments are discussed. Benchmark experiments demonstrate the superior cooling force and energy resolution of the photoelectron beam compared to its thermionic counterparts. The long period of operation allowed to study the long-time behaviour of the GaAs samples during multiple usage cycles at the Electron Target and repeated in-vacuum surface cleaning by atomic hydrogen exposure. An electron emission spectroscopy setup has been implemented at the photocathode preparation chamber of the Electron Target. Among others, this new facility opened the way to a novel application of GaAs (Cs) photocathodes as robust, ultraviolet-driven electron emitters. Based on this principle, a prototype of an electron gun, designed for implementation at the HITRAP setup at GSI, has been built and taken into operation successfully. (orig.)

Monitoring the beam flux in molecular beam epitaxy using laser multiphoton ionization

International Nuclear Information System (INIS)

Chien, R.; Sogard, M.R.

1990-01-01

In this paper, we will describe a method using laser nonresonant multiphoton ionization to measure beam flux in molecular beam epitaxy (MBE) systems. The results were obtained in a test chamber where a focused excimer laser beam was used to photoionize a small fraction of the atomic and molecular beams. The constituents of the beams were identified by a time-of-flight mass spectrometer. Ion signal strength was found to be directly correlated to the temperature of the atomic beam oven. Good stability and sensitivity on gallium, aluminum, and silicon atomic beams was demonstrated. Arsenic was also detected. We demonstrated very sensitive detection of contaminant atomic and molecular constituents of our system. We have also detected the presence of short-term fluctuations in the gallium flux from an effusion source. These fluctuations, previously suspected, can be in excess of ±10%

Structure formation in atom lithography using geometric collimation

NARCIS (Netherlands)

Meijer, T.; Beardmore, J.P.; Fabrie, C.G.C.H.M.; van Lieshout, J.P.; Notermans, R.P.M.J.W.; Sang, R.T.; Vredenbregt, E.J.D.; Leeuwen, van K.A.H.

2011-01-01

Atom lithography uses standing wave light fields as arrays of lenses to focus neutral atom beams into line patterns on a substrate. Laser cooled atom beams are commonly used, but an atom beam source with a small opening placed at a large distance from a substrate creates atom beams which are locally

Recent progress in the studies of atomic spectra and transition probabilities by beam-foil spectroscopy

International Nuclear Information System (INIS)

Martinson, I.

1982-01-01

A review is given of recent studies of atomic structure (in particular atomic spectra, energy levels and transition probabilities) using fast beams from ion accelerators. Thanks to improved spectral resolution detailed and quite accurate studies of energy levels are now possible, a number of such results will be discussed. The non-autoionizing, multiply excited levels in atoms and ions (including negative ions) are being vigorously investigated at present, some new results will be reported. The accuracy in lifetime determinations continues to improve, and several new ways for reduction of cascading effects have been developed. Some selected examples of recent progress in lifetime measurements are also included. (orig.)

New sources of cold atoms for atomic clocks

International Nuclear Information System (INIS)

Aucouturier, E.

1997-01-01

The purpose of this doctoral work is the realisation of new sources of cold cesium atoms that could be useful for the conception of a compact and high-performance atomic clock. It is based on experiences of atomic physics using light induced atomic manipulation. We present here the experiences of radiative cooling of atoms that have been realised at the Laboratoire de l'Horloge Atomique from 1993 to 1996. Firstly, we applied the techniques of radiative cooling and trapping of atoms in order to create a three-dimensional magneto-optical trap. For this first experience, we developed high quality laser sources, that were used for other experiments. We imagined a new configuration of trapping (two-dimensional magneto-optical trap) that was the basis for a cold atom source. This design gives the atoms a possibility to escape towards one particular direction. Then, we have extracted the atoms from this anisotropic trap in order to create a continuous beam of cold atoms. We have applied three methods of extraction. Firstly, the launching of atoms was performed by reducing the intensity of one of the cooling laser beams in the desired launching direction. Secondly, a frequency detuning between the two laser laser beams produced the launching of atoms by a so-called 'moving molasses'. The third method consisted in applying a static magnetic field that induced the launching of atoms in the direction of this magnetic field. At the same time, another research on cold atoms was initiated at the I.H.A. It consisted in cooling a large volume of atoms from a cell, using an isotropic light. This offers an interesting alternative to the traditional optical molasses. (author)

Selective separation of indium by iminodiacetic acid chelating resin

International Nuclear Information System (INIS)

Fortes, M.C.B.; Benedetto, J.S.; Martins, A.H.

2007-01-01

- Indium can be recovered by treating residues, flue dusts, slags, and metallic intermediates in zinc smelting. This paper investigates the adsorption characteristics of indium and iron on an iminodiacetic acid chelating resin, Amberlite R IRC748 (Rohm and Haas Co.-USA). High concentrations of iron are always present in the aqueous feed solution of indium recovery. In addition, the chemical behaviour of iron in adsorptive systems is similar to that of indium. The metal concentrations in the aqueous solution were based on typical indium sulfate leach liquor obtained from zinc hydrometallurgical processing in a Brazilian plant. The ionic adsorption experiments were carried out by the continuous column method. Amberlite R IRC748 resin had a high affinity for indium under acidic conditions. Indium ions adsorbed onto the polymeric resin were eluted with a 0.5 mol/dm 3 sulphuric acid solution passed through the resin bed in the column. 99.5% pure indium sulfate aqueous solution was obtained using the iminodiacetic acid chelating resin Amberlite R IRC748. (author)

InP (Indium Phosphide): Into the future

International Nuclear Information System (INIS)

Brandhorst, H.W. Jr.

1989-03-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide

InP (Indium Phosphide): Into the future

Science.gov (United States)

Brandhorst, Henry W., Jr.

1989-01-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

2015-08-24

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

Indium-Catalyzed Annulation of o-Acylanilines with Alkoxyheteroarenes: Synthesis of Heteroaryl[b]quinolines and Subsequent Transformation to Cryptolepine Derivatives

Directory of Open Access Journals (Sweden)

Kyohei Yonekura

2018-04-01

Full Text Available We disclose herein the first synthetic method that is capable of offering heteroaryl[b]quinolines (HA[b]Qs with structural diversity, which include tricyclic and tetracyclic structures with (benzothienyl, (benzofuranyl, and indolyl rings. The target HA[b]Q is addressed by the annulation of o-acylanilines and MeO–heteroarenes with the aid of an indium Lewis acid that effectively works to make two different types of the N–C and C–C bonds in one batch. A series of indolo[3,2-b]quinolines prepared here can be subsequently transformed to structurally unprecedented cryptolepine derivatives. Mechanistic studies showed that the N–C bond formation is followed by the C–C bond formation. The indium-catalyzed annulation reaction thus starts with the nucleophilic attack of the NH2 group of o-acylanilines to the MeO-connected carbon atom of the heteroaryl ring in an SNAr fashion, and thereby the N–C bond is formed. The resulting intermediate then cyclizes to make the C–C bond through the nucleophilic attack of the heteroaryl-ring-based carbon atom to the carbonyl carbon atom, providing the HA[b]Q after aromatizing dehydration.

A crossed-beam experiment on intramultiplet mixing collisions with short-lived Ne** {(2p)5(3p)} atoms

NARCIS (Netherlands)

Manders, M.P.I.; Ruyten, W.M.J.; van de Beucken, F..J.H.M.; Driessen, J.P.J.; Veugelers, W.J.T.; Kramer, P.H.; Vredenbregt, E.J.D.; van Hoek, W.B.M.; Sandker, G.J.; Beijerinck, H.C.W.; Verhaar, B.J.

1988-01-01

We describe the design, operation, and calibration of a crossed-beam experiment for the study of intramultiplet mixing collisions of short-lived electronically excited Ne{(2p)5(3p)}≡{α} atoms with ground-state atoms/molecules. The excellent performance of almost 1 kHz/Å2 (number of counts per unit

Nuclear structure of light thallium isotopes as deduced from laser spectroscopy on a fast atom beam

International Nuclear Information System (INIS)

Bounds, J.A.

1985-08-01

After optimizing the system by experiments on /sup 201,203,205/Tl, the neutron-deficient isotopes 189-193 Tl have been studied using the collinear fast atom beam laser spectroscopy system at UNISOR on-line to the Holifield Heavy Ion Research Facility. A sensitive system for the measurements was developed since the light isotopes were available in mass-separated beams of only 7 x 10 4 to 4 x 10 5 atoms per second. By laser excitation of the 535 nm atomic transitions of atoms in the beam, the 6s 2 7s 2 S/sub 1/2/ and 6s 2 6s 2 P/sub 3/2/ hyperfine structures were measured, as were the isotope shifts of the 535 nm transitions. From these, the magnetic dipole moments, spectroscopic quadrupole moments and isotopic changes in mean-square charge radius were deduced. The magnetic dipole moments are consistent with previous data. The /sup 190,192/Tl isotopes show a considerable difference in quadrupole deformations as well as an anomalous isotope shift with respect to 194 Tl. A large isomer shift in 193 Tl is observed implying a larger deformation in the 9/2 - isomer than in the 1/2 + ground state. The /sup 189,191,193/Tl isomers show increasing deformation away from stability. A deformed shell model calculation indicates that this increase in deformation can account for the dropping of the 9/2 - band in these isotopes while an increase in neutron pairing correlations, having opposite and compensating effects on the rotational moment of inertia, maintains the 9/2 - strong-coupled band structure. 105 refs., 27 figs

Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

International Nuclear Information System (INIS)

Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

2006-01-01

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

Use of and occupational exposure to indium in the United States.

Science.gov (United States)

Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

2013-01-01

Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

Spatially resolved photoionization of ultracold atoms on an atom chip

International Nuclear Information System (INIS)

Kraft, S.; Guenther, A.; Fortagh, J.; Zimmermann, C.

2007-01-01

We report on photoionization of ultracold magnetically trapped Rb atoms on an atom chip. The atoms are trapped at 5 μK in a strongly anisotropic trap. Through a hole in the chip with a diameter of 150 μm, two laser beams are focused onto a fraction of the atomic cloud. A first laser beam with a wavelength of 778 nm excites the atoms via a two-photon transition to the 5D level. With a fiber laser at 1080 nm the excited atoms are photoionized. Ionization leads to depletion of the atomic density distribution observed by absorption imaging. The resonant ionization spectrum is reported. The setup used in this experiment is suitable not only to investigate mixtures of Bose-Einstein condensates and ions but also for single-atom detection on an atom chip

Concentration dependence of surface properties and molar volume of multicomponent system indium-tin-lead-bismuth

Energy Technology Data Exchange (ETDEWEB)

Dadashev, R; Kutuev, R [Complex Science Research Institute of the Science Academy of the Chechen Republic, 21 Staropromisl. shosse, Grozny 364096 (Russian Federation); Elimkhanov, D [Science Academy of the Chechen Republic (Russian Federation)], E-mail: edzhabrail@mail.ru

2008-02-15

The results of an experimental research of surface properties of the four-component system indium-tin-lead-bismuth are presented. The researches under discussion were carried out in a combined device in which the surface tension ({sigma}) is measured by the method of maximum pressure in a drop, and density ({rho}) is measured by advanced aerometry. Measurement errors are 0.7 % for surface tension measurement, and 0.2 % for density measurement. The study of the concentration dependence of {sigma} in this system has revealed the influence of the third and fourth components upon the characteristics of surface tension isotherms of the binary system indium-tin. It was found out that with an increase in the content of the third and fourth components the depth of the minimum on the surface tension isotherms of the indium-tin system {sigma} decreases. On the basis of the concentration dependence of the phenomenon of concentration bufferity is revealed. It is shown that despite the complex character, isotherms of {sigma} on beam sections of a multicomponent system do not contain qualitatively new features in comparison with the isotherms of these properties in lateral binary systems.

Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

Science.gov (United States)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.

In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

International Nuclear Information System (INIS)

Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

2007-01-01

A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

Atomic weights of the elements 2011 (IUPAC Technical Report)

Science.gov (United States)

Wieser, Michael E.; Holden, Norman; Coplen, Tyler B.; Böhlke, John K.; Berglund, Michael; Brand, Willi A.; De Bièvre, Paul; Gröning, Manfred; Loss, Robert D.; Meija, Juris; Hirata, Takafumi; Prohaska, Thomas; Schoenberg, Ronny; O'Connor, Glenda; Walczyk, Thomas; Yoneda, Shige; Zhu, Xiang-Kun

2013-01-01

The biennial review of atomic-weight determinations and other cognate data has resulted in changes for the standard atomic weights of five elements. The atomic weight of bromine has changed from 79.904(1) to the interval [79.901, 79.907], germanium from 72.63(1) to 72.630(8), indium from 114.818(3) to 114.818(1), magnesium from 24.3050(6) to the interval [24.304, 24.307], and mercury from 200.59(2) to 200.592(3). For bromine and magnesium, assignment of intervals for the new standard atomic weights reflects the common occurrence of variations in the atomic weights of those elements in normal terrestrial materials.

Influence of indium clustering on the band structure of semiconducting ternary and quaternarynitride alloys

DEFF Research Database (Denmark)

Gorczyca,, I.; Łepkowski, S. P.; Suski, T.

2009-01-01

smaller when the In atoms are clustered than when they are uniformly distributed. An explanation of this phenomenon is proposed on the basis of an analysis of the density of states and the bond lengths, performed in detail for ternary alloys. Results for the band gaps of InxGayAl1-x-yN quaternary alloys...... and atomic arrangements are examined. Particular attention is paid to the magnitude of and trends in bowing of the band gaps. Indium composition fluctuation (clustering) is simulated by different distributions of In atoms and it is shown that it strongly influences the band gaps. The gaps are considerably...... show a similar trend. It is suggested that the large variation in the band gaps determined on samples grown in different laboratories is caused by different degrees of In clustering....

Working group report on the required atomic database for neutral hydrogen beam penetration in large tokamaks

International Nuclear Information System (INIS)

Cox, M.; Boley, C.D.; Janev, R.K.

1989-01-01

This report discusses the required atomic database for the physical processes involved in the beam attenuation kinetics, when multistep processes are included, i.e., electron and proton impact processes, impurity-ion impact processes, radiative processes, as well as Lorentz field ionization. It also discusses the required accuracies of different parts of the data base in order to achieve the overall accuracy of about 10 percent that is required for the total beam stopping power cross section. 3 refs

Review of pulmonary toxicity of indium compounds to animals and humans

International Nuclear Information System (INIS)

Tanaka, Akiyo; Hirata, Miyuki; Kiyohara, Yutaka; Nakano, Makiko; Omae, Kazuyuki; Shiratani, Masaharu; Koga, Kazunori

2010-01-01

Due to the increased production of ITO, the potential health hazards arising from occupational exposure to this material have attracted much attention. This review consists of three parts: 1) toxic effects of indium compounds on animals, 2) toxic effects of indium compounds on humans, and 3) recommendations for preventing exposure to indium compounds in the workplace. Available data have indicated that insoluble form of indium compounds, such as ITO, indium arsenide (InAs) and indium phosphide (InP), can be toxic to animals. Furthermore, InP has demonstrated clear evidence of carcinogenic potential in long-term inhalation studies using experimental animals. As for the dangers to humans, some data are available concerning adverse health effects to workers who have been exposed to indium-containing particles. The Japan Society for Occupational Health recommended the value of 3 μg/L of indium in serum as the occupational exposure limit based on biological monitoring to preventing adverse health effects in workers resulting from occupational exposure to indium compounds. Accordingly, it is essential that much greater attention is focused on human exposure to indium compounds, and precautions against possible exposure to indium compounds are most important with regard to health management among indium-handling workers.

Supramolecular compounds of indium sulfates with nitrogen-containing cations

International Nuclear Information System (INIS)

Petrosyants, S.P.; Ilyukhin, A.B.; Ketsko, V.A.

2006-01-01

Compounds with a general formula [Cat][In(H 2 O) n (SO 4 ) 2 ] x · mH 2 O (where Cat = C(NH 2 ) 3 , H(2,2'-Bipy), H 2 (4,4'-Bipy), H 2 [Py(CH 2 ) 3 Py], and H 3 N(CH 2 ) 6 NH 3 ) were synthesized and identified from the elemental analysis, IR, and thermogravimetric analysis data. X-ray diffraction analysis of crystalline [C(NH 2 ) 3 ][In(H 2 O) 2 (SO 4 ) 2 ] complex has shown that the polymer chains of In aqua sulfate form ensembles with guanidinium ions. The structure of [H 2 (4,4'-Bipy)][In 2 (H 2 O) 6 (SO 4 ) 4 ] · 2H 2 O consists of the dimeric anions of indium sulfate. The coordination sphere of In includes three O atoms of three SO 4 groups and three O atoms of water molecules. The dimers are united into framework by diprotonated Bipy cations [ru

Indium-111 octreotide uptake in the surgical scar

Energy Technology Data Exchange (ETDEWEB)

Degirmenci, B.; Bekis, R.; Durak, H.; Derebeck, E. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Nuclear Medicine; Sen, M. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Radiation Oncology

1999-07-01

Indium-111 octreotide uptake has been reported in various somatostatin receptor positive tumors, granulomas and autoimmune diseases in which activated leucocytes may play a role, subcutaneous cavernous hemangioma and angiofibroma. We present Indium-111 octreotide uptake in a surgical abdominal scar tissue 1.5 to 6 months after surgery in a patient who had been treated for recurrent carcinoid tumor in the rectosigmoid junction. Indium-111 octreotide uptake in a surgical scar may be related to the binding to somatostatin receptors in the activated lymphocytes and fibroblasts that is previously reported. (orig.) [German] In verschiedenen Somatostatinrezeptor-positiven Tumoren, Granulomen, bei Autoimmunerkrankungen, in denen aktivierte Leukozyten eine Rolle spielen, subcutanen kavernoesen Hammangiomen und Angiofibromen wurde ueber die Anreicherung von Indium-111-Oktreotid berichtet. Wir berichten ueber die Anreicherung von Indium-111-Oktreotid in einer chirurgischen Narbe ueber dem Abdomen nach 1,5 und 6 Monaten bei einem Patienten mit einem Rezidiv-Karzinoid im rektosigmoidalen Uebergang. Die Anreicherung von Indium-111-Oktreotid in chirurgischen Narbengewebe koennte in Zusammenhang stehen mit einer Bindung an Somatostationrezeptoren in aktivierten Lymphozyten und Fibroblasten, ueber die schon berichtet wurde. (orig.)

Nanoscratch characterization of indium nitride films

Energy Technology Data Exchange (ETDEWEB)

Lian, Derming [Chin-Yi Univ. of Technology, Taichung, Taiwan (China). Dept. of Mechanical Engineering

2014-01-15

In this study we used RF plasma-assisted molecular beam epitaxy for the epitaxial growth of single-crystalline indium nitride (InN) thin films on aluminum nitride buffer layers/Si (111) substrates. We then used scratch techniques to study the influence of the c-axis orientation of the InN films and the beam interactions on the tribological performance of these samples. When grown at 440, 470, and 500 C, the coefficients of friction were 0.18, 0.22, and 0.26, respectively, under a normal force (F{sub n}) of 2000 {mu}N; 0.19, 0.23, and 0.27, respectively, under a value of Fn of 4000 {mu}N; and 0.21, 0.24, and 0.28, respectively, under a value of F{sub n} of 6000 {mu}N. These measured values increased slightly upon increasing the growth temperature because of the resulting smaller sizes of the apertures and/or pores in the inner films. The sliding resistance of the ploughed area was observed. The contact sliding line became increasingly noticeable upon increasing the value of F{sub n}; the plot of the friction with respect to the penetration depth revealed a significant relation in its adhesion properties presentation. (orig.)

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

International Nuclear Information System (INIS)

Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

2015-01-01

Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, P. [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Bag, A.; Jana, S. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Chakraborty, A. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India); Das, S.; Mahata, M. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

2015-01-01

Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

Two-stage crossed beam cooling with ⁶Li and ¹³³Cs atoms in microgravity.

Science.gov (United States)

Luan, Tian; Yao, Hepeng; Wang, Lu; Li, Chen; Yang, Shifeng; Chen, Xuzong; Ma, Zhaoyuan

2015-05-04

Applying the direct simulation Monte Carlo (DSMC) method developed for ultracold Bose-Fermi mixture gases research, we study the sympathetic cooling process of 6Li and 133Cs atoms in a crossed optical dipole trap. The obstacles to producing 6Li Fermi degenerate gas via direct sympathetic cooling with 133Cs are also analyzed, by which we find that the side-effect of the gravity is one of the main obstacles. Based on the dynamic nature of 6Li and 133Cs atoms, we suggest a two-stage cooling process with two pairs of crossed beams in microgravity environment. According to our simulations, the temperature of 6Li atoms can be cooled to T = 29.5 pK and T/TF = 0.59 with several thousand atoms, which propose a novel way to get ultracold fermion atoms with quantum degeneracy near pico-Kelvin.

Versatile user-oriented atomic and molecular beam apparatus for use with the National Synchrotron Light Source

International Nuclear Information System (INIS)

Mitchell, J.B.A.; Grover, J.R.

1978-11-01

A proposed atomic and moleuclar beam apparatus is described for photon interaction studies using the National Sychrotron Light Source at the Brookhaven National Laboratory. This apparatus will employ ultrahigh vacuum techniques compatible with storage ring operation. Supersonic nozzle sources will be used to produce the beams and signal detection will be accomplished using a quadrupole mass analysis system. The equipment is intended for use both by in-house and outside users and primary consideration has been given to flexibility of design. The application of photoionization techniques to the study of crossed beam reactive scattering with particular emphasis on internal energy distribution analysis is discussed

Cross-current leaching of indium from end-of-life LCD panels

Energy Technology Data Exchange (ETDEWEB)

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy); Ubaldini, Stefano [Institute of Environmental Geology and Geoengineering IGAG, National Research Council, Via Salaria km 29300, 00015 Montelibretti, Rome (Italy); De Michelis, Ida [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Kopacek, Bernd [ISL Kopacek KG, Beckmanngasse 51, 1140 Wien (Austria); Vegliò, Francesco [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Beolchini, Francesca, E-mail: f.beolchini@univpm.it [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy)

2015-08-15

Graphical abstract: Display Omitted - Highlights: • End-of-life LCD panels represent a source of indium. • Several experimental conditions for indium leaching have been assessed. • Indium is completely extracted with 2 M sulfuric acid at 80 °C for 10 min. • Cross-current leaching improves indium extraction and operating costs are lowered. • Benefits to the environment come from reduction of CO{sub 2} emissions and reagents use. - Abstract: Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2 M sulfuric acid at 80 °C for 10 min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100 ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85–90%, and with 6 steps it was about 50–55%. Indium concentration in the leachate was about 35 mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO{sub 2} (with 10 steps we assessed that the emission of about 90 kg CO{sub 2}-Eq. could be avoided) thanks to the recovery of indium

Multiple carrier transport in N-face indium nitride

International Nuclear Information System (INIS)

Koblmueller, Gregor; Gallinat, Chad S.; Speck, James S.; Umana-Membreno, Gilberto A.; Nener, Brett D.; Parish, Giacinta; Fehlberg, Tamara B.

2008-01-01

We present temperature (20-300 K) dependent multi-carrier measurements of electron species in N-face indium nitride. N-face InN samples were grown to different thicknesses (500-2000 nm) via plasma-assisted molecular beam epitaxy on C-face SiC substrates. Surface and bulk electron transport properties were extracted using a quantitative mobility spectrum analysis. Mobility of both bulk and surface electron species increase with film thickness. The temperature dependence of the mobility of both species differs to that of In-polar samples studied previously, while the mobility of surface electrons is more than twice that of In-polar samples with only a slight corresponding reduction in sheet concentration. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

Directory of Open Access Journals (Sweden)

Rajesh Biswal

2014-07-01

Full Text Available The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002 to (101 planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Analysis of Indium Tin Oxide Film Using Argon Fluroide (ArF) Laser-Excited Atomic Fluorescence of Ablated Plumes.

Science.gov (United States)

Ho, Sut Kam; Garcia, Dario Machado

2017-04-01

A two-pulse laser-excited atomic fluorescence (LEAF) technique at 193 nm wavelength was applied to the analysis of indium tin oxide (ITO) layer on polyethylene terephthalate (PET) film. Fluorescence emissions from analytes were induced from plumes generated by first laser pulse. Using this approach, non-selective LEAF can be accomplished for simultaneous multi-element analysis and it overcomes the handicap of strict requirement for laser excitation wavelength. In this study, experimental conditions including laser fluences, times for gating and time delay between pulses were optimized to reveal high sensitivity with minimal sample destruction and penetration. With weak laser fluences of 100 and 125 mJ/cm 2 for 355 and 193 nm pulses, detection limits were estimated to be 0.10% and 0.43% for Sn and In, respectively. In addition, the relation between fluorescence emissions and number of laser shots was investigated; reproducible results were obtained for Sn and In. It shows the feasibility of depth profiling by this technique. Morphologies of samples were characterized at various laser fluences and number of shots to examine the accurate penetration. Images of craters were also investigated using scanning electron microscopy (SEM). The results demonstrate the imperceptible destructiveness of film after laser shot. With such weak laser fluences and minimal destructiveness, this LEAF technique is suitable for thin-film analysis.

Nonlinear dynamic response of cantilever beam tip during atomic force microscopy (AFM) nanolithography of copper surface

International Nuclear Information System (INIS)

Yeh, Y-L; Jang, M-J; Wang, C-C; Lin, Y-P; Chen, K-S

2008-01-01

This paper investigates the nonlinear dynamic response of an atomic force microscope (AFM) cantilever beam tip during the nanolithography of a copper (Cu) surface using a high-depth feed. The dynamic motion of the tip is modeled using a combined approach based on Newton's law and empirical observations. The cutting force is determined from experimental observations of the piling height on the Cu surface and the rotation angle of the cantilever beam tip. It is found that the piling height increases linearly with the cantilever beam carrier velocity. Furthermore, the cantilever beam tip is found to execute a saw tooth motion. Both this motion and the shear cutting force are nonlinear. The elastic modulus in the y direction is variable. Finally, the velocity of the cantilever beam tip as it traverses the specimen surface has a discrete characteristic rather than a smooth, continuous profile

Energy variable monoenergetic positron beam study of oxygen atoms in Czochralski grown Si

International Nuclear Information System (INIS)

Tanigawa, S.; Wei, L.; Tabuki, Y.; Nagai, R.; Takeda, E.

1992-01-01

A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski-grown Si with the coverage of SiO 2 (100 nm) and poly-Si (200 nm)/SiO 2 (100 nm), respectively. It was found that (i) the growth of SiO 2 gives rise to a strong Doppler broadening of positron annihilation radiations in the bulk of Si, (ii) such a broadening can be recovered to the original level by annealing at 450degC, by the removal of overlayers using chemical etching and long-term aging at room temperature, (iii) the film stress over the CZ-grown Si is responsible for the rearrangement of oxygen atoms in S and (iv) only tensile stress gives rise to the clustering of oxygen atoms. The observed broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in CZ-grown Si. (author)

Indium solar neutrino experiment using superconducting grains

International Nuclear Information System (INIS)

Bellefon, A. de; Espigat, P.

1984-08-01

In this paper we would like to emphasize the revival of interest for Indium experiment in Europe. Properties of metastable superconducting indium grains are presented and our progress towards making an experiment feasible is reviewed

Flexible inverted polymer solar cells with an indium-free tri-layer cathode

International Nuclear Information System (INIS)

El Hajj, Ahmad; Lucas, Bruno; Schirr-Bonnans, Martin; Ratier, Bernard; Kraft, Thomas M.; Torchio, Philippe

2014-01-01

Indium tin oxide (ITO)-free inverted polymer solar cells (PSCs) have been fabricated without the need of an additional electron transport layer. The indium-free transparent electrode consists of a tri-layer stack ZnO (30 nm)/Ag (14 nm)/ZnO (30 nm) deposited on glass and plastic substrates via ion-beam sputtering. The tri-layer electrodes exhibit similar physical properties to its ITO counterpart, specifically yielding high transmittance and low resistivity (76.5% T at 550 nm, R sq of 8 Ω/◻) on plastic substrates. The novel tri-layer electrode allows for the fabrication of inverted PSCs without the additional ZnO interfacial layer commonly deposited between ITO and the photoactive layer. This allows for the preparation of thinner plastic solar cells using less material than conventional architectures. Initial studies involving the newly realized architecture (tri-layer electrode/P3HT:PCBM/PEDOT:PSS/Ag) have shown great promise for the transition from ITO to other viable electrodes in organic electronics

Effects of the electron beam on InP(100)

International Nuclear Information System (INIS)

Bouslama, M.; Jardin, C.; Ghamnia, M.

1996-01-01

Auger Electron Spectroscopy (AES) is performed to monitor the InP(100) surface evolution while it is irradiated by an electron beam of 5 KeV energy and 10 -3 A.cm -2 current density. A charge phenomenon appears during the irradiation of sputter-cleaned InP(100) by Ar + at low energy (500 eV). The deposition of phosphorus or antimony at room temperature on cleaned InP(100) is a good way of preventing this charging problem. This is also achieved by the growth of stoichiometric indium phosphide on InP(100) substrate, from an injection of phosphine and indium trimethyl whose ratio V/III is of 50, in a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. The electron beam even acts to stimulate oxidation of the stoichiometric InP(100) surface involving on the top layers, into a well defined oxide such as InPO 4 or a contamination layer composed of carbon and oxygen. The partial pressure in the spectrometer is about 10 -9 Torr. The incident electrons produce breaking of (In-P) chemical bonds so that the resulting indium takes part in the oxidation process. The phosphorus is thought to be desorbed from the surface. (author)

Cross-current leaching of indium from end-of-life LCD panels.

Science.gov (United States)

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

2015-08-01

Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels. Copyright © 2015 Elsevier Ltd. All rights reserved.

Mn-implanted, polycrystalline indium tin oxide and indium oxide films

International Nuclear Information System (INIS)

Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

2014-10-30

Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

Indium-granulocyte scanning in the painful prosthetic joint

International Nuclear Information System (INIS)

Pring, D.J.; Henderson, R.G.; Keshavarzian, A.; Rivett, A.G.; Krausz, T.; Coombs, R.R.; Lavender, J.P.

1986-01-01

The value of indium-111-labeled granulocyte scanning to determine the presence of infection was assessed in 50 prosthetic joints (41 of which were painful) in 40 patients. Granulocytes were obtained from the patients' blood and labeled in plasma with indium 111 tropolonate. Abnormal accumulation of indium 111 in the region of the prosthesis was noted. Proven infection occurred in 11 prostheses, and all of the infections were detected by indium-111-labeled granulocyte scanning. Nineteen were not infected (including nine asymptomatic controls) and only two produced false-positive scans. This represents a specificity of 89.5%, sensitivity of 100%, and overall accuracy of 93.2%. These results compare favorably with plain radiography. There was no radiologic evidence of infection in three of the infected prostheses, and 10 of the noninfected prostheses had some radiologic features that suggested sepsis. We conclude that indium-granulocyte scanning can reliably detect or exclude infection in painful prosthetic joints and should prove useful in clinical management

Looking Down Under for a Circular Economy of Indium.

Science.gov (United States)

Werner, Tim T; Ciacci, Luca; Mudd, Gavin Mark; Reck, Barbara K; Northey, Stephen Alan

2018-02-20

Indium is a specialty metal crucial for modern technology, yet it is potentially critical due to its byproduct status in mining. Measures to reduce its criticality typically focus on improving its recycling efficiency at end-of-life. This study quantifies primary and secondary indium resources ("stocks") for Australia through a dynamic material-flow analysis. It is based on detailed assessments of indium mineral resources hosted in lead-zinc and copper deposits, respective mining activities from 1844 to 2013, and the trade of indium-containing products from 1988 to 2015. The results show that Australia's indium stocks are substantial, estimated at 46.2 kt in mineral resources and an additional 14.7 kt in mine wastes. Australian mineral resources alone could meet global demand (∼0.8 kt/year) for more than five decades. Discarded material from post-consumer products, instead, is negligible (43 t). This suggests that the resilience of Australia's indium supply can best be increased through efficiency gains in mining (such as introducing domestic indium refining capacity) rather than at the end of the product life. These findings likely also apply to other specialty metals, such as gallium or germanium, and other resource-dominated countries. Finally, the results illustrate that national circular economy strategies can differ substantially.

Continuous all-optical deceleration of molecular beams and demonstration with Rb atoms

Science.gov (United States)

Long, Xueping; Jayich, Andrew; Campbell, Wesley

2017-04-01

Ultracold samples of molecules are desirable for a variety of applications, such as many-body physics, precision measurement and quantum information science. However, the pursuit of ultracold molecules has achieved limited success: spontaneous emission into many different dark states makes it hard to optically decelerate molecules to trappable speed. We propose to address this problem with a general optical deceleration technique that exploits a pump-dump pulse pair from a mode-locked laser. A molecular beam is first excited by a counter-propagating ``pump'' pulse. The molecular beam is then driven back to the initial ground state by a co-propagating ``dump'' pulse via stimulated emission. The delay between the pump and dump pulse is set to be shorter than the excited state lifetimes in order to limit decays to dark states. We report progress benchmarking this stimulated force by accelerating a cold sample of neutral Rb atoms.

Work function of oxygen exposed lead and lead/indium alloy films

International Nuclear Information System (INIS)

Gundlach, K.H.; Hellemann, H.P.; Hoelzl, J.

1982-01-01

The effect of indium in superconducting tunnel junctions with lead/indium alloy base electrodes is investigated by measuring the vacuum work function of lead, indium, and lead/indium alloy films. It is found that the anomalous decrease of the work function of lead upon exposure to oxygen, explained by the penetration of oxygen into the inner surface of the lead film, is reversed into a slight increase in work function when some indium is added to the lead. This result indicates that the addition of indium provides a protection by suppressing the penetration of oxygen (and probably other gases) into the interior of the thin film

Secondary indium production from end-of-life liquid crystal displays

Energy Technology Data Exchange (ETDEWEB)

Amato, Alessia; Rocchetti, Laura; Fonti, Viviana; Ruello, Maria Letizia; Beolchini, Francesca [Universita Politecnica of Marche, DISVA, Via Brecce Bianche, 60131 Ancona (Italy)

2016-12-15

In 2014, the European Union identified 20 raw materials critical for economic importance and high supply risk. Indium, used in several innovative technologies, is among such critical raw materials. Generally, it is mined as a by-product of zinc from a mineral named sphalerite, with a concentration between 1 and 100 ppm. Currently, the largest producer of indium is China and about 84% of the worldwide indium consumption is used for liquid crystal display (LCD) production, in particular to form an indium-tin-oxide (ITO) film with transparent conductor properties. The fast evolution of LCD technologies caused a double effect: the growth of indium demand and an increase of waste electrical and electronic equipment (WEEE). Considering these two factors, the aim of this study is to make the end-of-life LCDs a secondary indium resource. With this purpose, an indium recovery process was developed carrying out an acidic leaching, followed by a zinc cementation. The first step allowed a complete indium extraction using 2M sulfuric acid at 80 C for 10 min. The problem of low indium concentration in the scraps (around 150 ppm) was overcome using a cross-current configuration in the leaching phase that allowed an increase of metal concentration and a decrease of reagents consumption. An indium recovery higher than 90% was obtained in the final cementation step, using 5 g/L of zinc powder at pH 3 and 55 C for 10 min. Considering its high efficiency, this process is promising in a context of circular economy, where a waste becomes a resource. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

NARCIS (Netherlands)

Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

2010-01-01

An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

BEAM TRANSPORT AND STORAGE WITH COLD NEUTRAL ATOMS AND MOLECULES

Energy Technology Data Exchange (ETDEWEB)

Walstrom, Peter L. [Los Alamos National Laboratory

2012-05-15

A large class of cold neutral atoms and molecules is subject to magnetic field-gradient forces. In the presence of a field, hyperfine atomic states are split into several Zeeman levels. The slopes of these curves vs. field are the effective magnetic moments. By means of optical pumping in a field, Zeeman states of neutral lithium atoms and CaH molecules with effective magnetic moments of nearly {+-} one Bohr magneton can be selected. Particles in Zeeman states for which the energy increases with field are repelled by increasing fields; particles in states for which the energy decreases with field are attracted to increasing fields. For stable magnetic confinement, field-repelled states are required. Neutral-particle velocities in the present study are on the order of tens to hundreds of m/s and the magnetic fields needed for transport and injection are on the order of in the range of 0.01-1T. Many of the general concepts of charged-particle beam transport carry over into neutral particle spin-force optics, but with important differences. In general, the role of bending dipoles in charged particle optics is played by quadrupoles in neutral particle optics; the role of quadrupoles is played by sextupoles. The neutralparticle analog of charge-exchange injection into storage rings is the use of lasers to flip the state of particles from field-seeking to field-repelled. Preliminary tracking results for two neutral atom/molecule storage ring configurations are presented. It was found that orbit instabilities limit the confinment time in a racetrack-shaped ring with discrete magnetic elements with drift spaces between them; stable behavior was observed in a toroidal ring with a continuous sextupole field. An alternative concept using a linear sextupole or octupole channel with solenoids on the ends is presently being considered.

Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

Science.gov (United States)

Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

2016-01-01

This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

Science.gov (United States)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Synthesis and characterization ligand tris-(2-thiosalicylamidoethyl)amine and its iron complexes and indium

International Nuclear Information System (INIS)

Guerra-Garcia, Pedro Pablo; Valle Bourrouet, Grettel

2006-01-01

The synthesis of coordination chemistry ligand tris-(2-tiosalicilamidoetil)amine is presented within the framework of study of tripod ligands, the corresponding complexes of iron and indium. Also, its spectroscopic characterization by proton magnetic resonance is showed; so the influence of ligand on a redox active metal and an inactive is compared. Electrochemical methods have been used. The presence of sulfur atoms modifies the redox and magnetic behavior of iron ion (III), as has been found in other similar ligands [es

Investigation of the effect of the incorporated Fe atoms in the ion-beam induced nanopatterns on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, Behnam; Biermanns, Andreas; Pietsch, Ullrich [Siegen Univ. (Germany). Festkoerperphysik; Cornejo, Marina; Frost, Frank [Leibniz-Institute fuer Oberflaechenmodifizierung e.V. (IOM), Leipzig (Germany)

2012-07-01

Ion beam erosion of semiconductor surfaces can modify the surface and depends on main sputtering parameters; different surface topographies such as ripple or dot like pattern are fabricated on the surface. Recent experiments have shown that the incorporation of foreign metallic atoms during the sputtering process plays a crucial role in pattern formation on surfaces. In the result of investigation we report on the depth profile of Fe atoms incorporated in sputtering process on Si(100) with low energy Kr ion beam. X-ray reflectivity (XRR) measurements determine the concentration profile of Fe atoms. X-ray absorption near edge spectroscopy (XANES) at the Fe K-edge (7112 eV) shows the formation of Fe rich silicide near surface region. X-ray photoelectron spectroscopy (XPS) shows a shift in the binding energy of Si2p levels at the surface compared top bulk confirming the formation of different phases of Fe-silicide on tope and below the surface. The depth profiles obtained by XRR are compared to results obtained by complementary secondary-ion mass spectrometry (SIMS).

Absorption imaging of ultracold atoms on atom chips

DEFF Research Database (Denmark)

Smith, David A.; Aigner, Simon; Hofferberth, Sebastian

2011-01-01

Imaging ultracold atomic gases close to surfaces is an important tool for the detailed analysis of experiments carried out using atom chips. We describe the critical factors that need be considered, especially when the imaging beam is purposely reflected from the surface. In particular we present...... methods to measure the atom-surface distance, which is a prerequisite for magnetic field imaging and studies of atom surface-interactions....

Vecksler-Macmillan phase stability for neutral atoms accelerated by a laser beam

Science.gov (United States)

Mel'nikov, I. V.; Haus, J. W.; Kazansky, P. G.

2003-05-01

We use a Fokker-Planck equation to study the phenomenon of accelerating a neutral atom bunch by a chirped optical beam. This method enables us to obtain a semi-analytical solution to the problem in which a wide range of parameters can be studied. In addition it provides a simple physical interpretation where the problem is reduced to an analogous problem of charged particles accelerators, that is, the Vecksler-Macmillan principle of phase stability. A possible experimental scenario is suggested, which uses a photonic crystal fiber as the guiding medium.

A three-dimensional relaxation model for calculation of atomic mixing and topography changes induces by ion beams

International Nuclear Information System (INIS)

Collins, R.; Perez-Martin, A.M.C.; Dominguez-Vazquez, J.; Jimenez-Rodriguez, J.J.

1994-01-01

A simple model for three-dimensional material relaxation associated with atomic mixing is presented. The relaxation of the solid to accommodate the extra effective displacement volume Ω of an implanted or relocated atom is modelled by treating the surrounding solid as an incompressible medium. This leads to a tractable general formalism which can be used to predict implant distribution and changes in surface topography induced by ion beams, both in monatomic and multicomponent targets. The two-component case is discussed in detail. (orig.)

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

Science.gov (United States)

Coutts, T. J.

1987-01-01

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Atom lithography of Fe

NARCIS (Netherlands)

Sligte, te E.; Smeets, B.; van der Stam, K.M.R.; Herfst, R.W.; Straten, van der P.; Beijerinck, H.C.W.; Leeuwen, van K.A.H.

2004-01-01

Direct write atom lithography is a technique in which nearly resonant light is used to pattern an atom beam. Nanostructures are formed when the patterned beam falls onto a substrate. We have applied this lithography scheme to a ferromagnetic element, using a 372 nm laser light standing wave to

TEM EDS analysis of epitaxially-grown self-assembled indium islands

Directory of Open Access Journals (Sweden)

Jasmine Sears

2017-05-01

Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

Acid indium strontium phosphate SrIn2[PO3(OH)]4: synthesis and crystal structure

International Nuclear Information System (INIS)

Rusakov, D.A.; Bobylev, A.P.; Komissarova, L.N.; Filaretov, A.A.; Danilov, V.P.

2007-01-01

Acid indium-strontium phosphate SrIn 2 [PO 3 (OH)] 4 is synthesized and characterized. Crystal structure and lattice parameters ate determined. In atoms in SrIn 2 [PO 3 (OH)] 4 structure are in distorted InO 6 octahedrons and form with PO 3 (OH) tetrahedrons mixed paraskeleton {In 2 [PO 3 (OH)] 4 } 3∞ 2- with emptinesses occupied by big Sr 2+ cations. The compound is thermally stable up to 400 Deg C [ru

A slow gravity compensated atom laser

DEFF Research Database (Denmark)

Kleine Büning, G.; Will, J.; Ertmer, W.

2010-01-01

the potential of the long interrogation times available with this atom laser beam by measuring the trap frequency in a single measurement. The small beam width together with the long evolution and interrogation time makes this atom laser beam a promising tool for continuous interferometric measurements....

Antimatter atoms

International Nuclear Information System (INIS)

Anon.

1996-01-01

In january 1996, CERN broadcasted the information of the creation of nine anti-hydrogen atoms, observed through disintegration products. The experimental facility was CERN LEAR ring. An antiproton beam scattered a xenon jet, and the resulting antimatter was first selected by its insensitivity to beam bending magnets. Their disintegration was detected in thin NaI detectors, in which the anti-atoms are at once deprived from their positron. Then, magnetic and time-of-flight spectrometers are used. (D.L.)

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

Low-pressure supersonic gas expansions. A study of the formation of cold hydrogen- and deuterium atomic beams for polarised gas targets

International Nuclear Information System (INIS)

Nass, A.

2002-04-01

In the present thesis expansions of atomic and molecular gases were studied. Velocity distributions characterize thereby the arising beams very well and give conclusions on the processes occurring in the expansion. these can be described by continuum models until the transition to the molecular flow range occurs. By certain criteria this transition can be described. Because a description of all processes by these models is difficult, the possibility was studied to describe gas expansions by means of Monte Carlo simulations. These simulate by means of binary collisions the motion of the molecules of the expanding gas and calculate from the distribution of the particles in the phase space the beam parameter, like for instance density, flow velocities, and beam temperatures. The results of these calculations were tested by different experimental means. To this belong especially the measurements of the velocity distributions by the time-of-flight method and the intensity profiles by the beam-profile monitor. All experimentally obtained data agree with the results of the calculations within the measurement errors. By this it is possible to predict the behavior during an expansion both qualitatively and quantitatively. precise statements on density and velocity distributions are possible, by which for instance new beam-shaping geometries can be tested. From the simulated distributions also a novel start generator for sextupole Monte Carlo simulations can be generated, which contains no models, but relates directly to the obtained data. The thesis that by a H 2 carrier beam a hydrogen or deuterium atomic beam with high phase-space density can be produced, was uniquely disproved. The high diffusion of both kinds of particles leads to a fast mixing and by this to no improvement of the atomic- beam intensity. The measured data were confirmed by the performed Monte Carlo simulations. The calculations on the base of Navier-Stokes equations are in the flow range applied here

Quasiclassical trajectory study of the molecular beam kinetics of the deuterium atom--hydrogen halide exchange reactions

International Nuclear Information System (INIS)

Raff, L.M.; Suzukawa, H.H. Jr.; Thompson, D.L.

1975-01-01

Unadjusted quasiclassical trajectory computations have been carried out to simulate the molecular beam scattering of thermal D atom beams at 2800 degreeK crossed with beams of HCl and HI at 250 degreeK. Total reaction cross sections, energy partitioning distributions, and differential scattering cross sections have been computed for the exchange reactions D+HCl → DCl+H and D+HI → DI+H while total reaction cross sections are reported for the corresponding abstractions, i.e., D+HCl → HD+Cl and D+HI → HD+I. For the exchange reactions, the computed reaction cross sections are within the range estimated from the crossed beam experiments. The calculated average energy partitioned into relative translational motion of products is in near quantitative agreement with the beam results, and the predicted differential scattering cross sections appear to be in qualitative accord with the beam experiments. The over-all agreement between theory and experiment indicates that previously computed values for the thermal rate coefficients for the exchange reactions are of the right order and that a systematic error exists in the interpretation of photolysis data in the hydrogen--hydrogen halide systems

Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor

International Nuclear Information System (INIS)

Cheong, Woo-Seok; Yoon, Young-sun; Shin, Jae-Heon; Hwang, Chi-Sun; Chu, Hye Yong

2009-01-01

Indium-tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT S ) for the versatile circuits or transparent displays. This paper is related with optimization of ITO source and drain electrode for TTFTs on glass substrates. For example, un-etched ITO remnants, which frequently found in the wet etching process, often originate from unsuitable ITO formation processes. In order to improve them, an ion beam deposition method is introduced, which uses for forming a seed layer before the main ITO deposition. We confirm that ITO films with seed layers are effective to obtain clean and smooth glass surfaces without un-etched ITO remnants, resulting in a good long-run electrical stability of the top-gate indium-gallium-zinc oxide-TTFT.

Atom-surface potentials and atom interferometry

International Nuclear Information System (INIS)

Babb, J.F.

1998-01-01

Long-range atom-surface potentials characterize the physics of many actual systems and are now measurable spectroscopically in deflection of atomic beams in cavities or in reflection of atoms in atomic fountains. For a ground state, spherically symmetric atom the potential varies as -1/R 3 near the wall, where R is the atom-surface distance. For asymptotically large distances the potential is weaker and goes as -1/R 4 due to retardation arising from the finite speed of light. This diminished interaction can also be interpreted as a Casimir effect. The possibility of measuring atom-surface potentials using atomic interferometry is explored. The particular cases studied are the interactions of a ground-state alkali-metal atom and a dielectric or a conducting wall. Accurate descriptions of atom-surface potentials in theories of evanescent-wave atomic mirrors and evanescent wave-guided atoms are also discussed. (author)

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

Energy Technology Data Exchange (ETDEWEB)

Humphreys, C.J., E-mail: colin.humphreys@msm.cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Griffiths, J.T., E-mail: jg641@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Tang, F., E-mail: ft274@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Oehler, F., E-mail: fabrice.oehler@lpn.cnrs.fr [CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis (France); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Victoria 3800 (Australia); Zheng, C., E-mail: changlin.zheng@monash.edu [Monash Centre for Electron Microscopy, Monash University, Victoria 3800 (Australia); Etheridge, J., E-mail: joanne.etheridge@mcem.monash.edu [Department of Materials Science and Engineering, Monash University, Victoria 3800 (Australia); Martin, T.L., E-mail: tomas.martin@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Bagot, P.A.J., E-mail: paul.bagot@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Moody, M.P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Sutherland, D., E-mail: danny.sutherland@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S., E-mail: stefan.schulz@tyndall.ie [Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork (Ireland); and others

2017-05-15

Highlights: • We have studied the atomic structure of polar and non-polar InGaN quantum wells. • The non-polar (11-20) InGaN quantum wells contain indium-rich clusters, unlike the polar (0001) quantum wells. • The electrons and holes in the quantum wells are localised by different mechanisms. - Abstract: We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20 meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60 meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.

GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

International Nuclear Information System (INIS)

Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

2014-01-01

Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

Polarographic determination of selenium in indium

International Nuclear Information System (INIS)

Kaplan, B.Ya.; Mikheeva, V.A.; Priz, N.B.

1978-01-01

The procedure of determining nx10 -6 % Se in indium after concentrating in an elemental form on arsenic and sulphur has been developed. The selenium content is determined by inversion a.c. polarography on a sulphuric-acid background in the presence of Cu(2), potassium bichromate, and sodium pyrophosphate. 5.7x10 -6 % Se in metal indium has been determined by this procedure, the mean standard deviation being Sr=0.26

Light and/or atomic beams to detect ultraweak gravitational effects

Directory of Open Access Journals (Sweden)

Tartaglia Angelo

2014-06-01

Full Text Available We shall review the opportunities lent by ring lasers and atomic beams interferometry in order to reveal gravitomagnetic effects on Earth. Both techniques are based on the asymmetric propagation of waves in the gravitational field of a rotating mass; actually the times of flight for co- or counter-rotating closed paths turn out to be different. After discussing properties and limitations of the two approaches we shall describe the proposed GINGER experiment which is being developed for the Gran Sasso National Laboratories in Italy. The experimental apparatus will consist of a three-dimensional array of square rings, 6m × 6m, that is planned to reach a sensitivity in the order of 1prad/√Hertz or better. This sensitivity would be one order of magnitude better than the best existing ring, which is the G-ring in Wettzell, Bavaria, and would allow for the terrestrial detection of the Lense-Thirring effect and possibly of deviations from General Relativity. The possibility of using either the ring laser approach or atomic interferometry in a space mission will also be considered. The technology problems are under experimental study using both the German G-ring and the smaller G-Pisa ring, located at the Gran Sasso.

Hydrogen Production via Steam Reforming of Ethyl Alcohol over Palladium/Indium Oxide Catalyst

Directory of Open Access Journals (Sweden)

Tetsuo Umegaki

2009-01-01

Full Text Available We report the synergetic effect between palladium and indium oxide on hydrogen production in the steam reforming reaction of ethyl alcohol. The palladium/indium oxide catalyst shows higher hydrogen production rate than indium oxide and palladium. Palladium/indium oxide affords ketonization of ethyl alcohol with negligible by-product carbon monoxide, while indium oxide mainly affords dehydration of ethyl alcohol, and palladium affords decomposition of ethyl alcohol with large amount of by-product carbon monoxide. The catalytic feature of palladium/indium oxide can be ascribed to the formation of palladium-indium intermetallic component during the reaction as confirmed by X-ray diffraction and X-ray photoelectron spectroscopic measurements.

Use of an Atmospheric Atomic Oxygen Beam for Restoration of Defaced Paintings

Science.gov (United States)

Banks, Bruce A.; Rutledge, Sharon K.; Karla, Margaret; Norris, Mary Jo; Real, William A.; Haytas, Christy A.

1999-01-01

An atmospheric atomic oxygen beam has been found to be effective in removing organic materials through oxidation that are typical of graffiti or other contaminant defacements which may occur to the surfaces of paintings. The technique, developed by the National Aeronautics and Space Administration, is portable and was successfully used at the Carnegie Museum of Art to remove a lipstick smudge from the surface of porous paint on the Andy Warhol painting "Bathtub." This process was also evaluated for suitability to remove felt tip and ball point ink graffiti from paper, gesso on canvas and cotton canvas.

Catalytic property of an indium-deposited powder-type material containing silicon and its dependence on the dose of indium nano-particles irradiated by a pulse arc plasma process

Directory of Open Access Journals (Sweden)

Satoru Yoshimura

2017-06-01

Full Text Available Indium nano-particle irradiations onto zeolite powders were carried out using a pulse arc plasma source system. X-ray photoelectron spectroscopic and scanning electron microscopic studies of an indium irradiated zeolite sample revealed that indium nano-particles were successfully deposited on the sample. Besides, the sample was found to be capable of catalyzing an organic chemical reaction (i.e., Friedel-Crafts alkylation. Then, we examined whether or not the catalytic ability depends on the irradiated indium dose, having established the optimal indium dose for inducing the catalytic effect.

Intense multimicrojoule high-order harmonics generated from neutral atoms of In2O3 nanoparticles

International Nuclear Information System (INIS)

Elouga Bom, L. B.; Abdul-Hadi, J.; Vidal, F.; Ozaki, T.; Ganeev, R. A.

2009-01-01

We studied high-order harmonic generation from plasma that contains an abundance of indium oxide nanoparticles. We found that harmonics from nanoparticle-containing plasma are considerably more intense than from plasma produced on the In 2 O 3 bulk target, with high-order harmonic energy ranging from 6 μJ (for the ninth harmonic) to 1 μJ (for the 17th harmonic) in the former case. The harmonic cutoff from nanoparticles was at the 21st order, which is lower than that observed using indium oxide solid target. By comparing the harmonic spectra obtained from solid and nanoparticle indium oxide targets, we concluded that intense harmonics in the latter case are dominantly generated from neutral atoms of the In 2 O 3 nanoparticles

A new method for building an atomic matter-wave interferometry

International Nuclear Information System (INIS)

Gao Hongyi; Chen Jianwen; Xie Honglan; Chen Min; Xu Zhizhan; Xiao Tiqiao; Zhu Peiping

2002-01-01

A new method for building an atomic matter-wave interferometry is proposed. A Fresnel zone-plate is used for restricting the linewidth of atomic beams, then a quasi-monochromatic atomic beam is obtained to illuminate four slits on a copper foil. The phenomenon of atomic interference and holograph can be observed, which is used to measure the coherent length of atomic beams

Indium sulfide precipitation from hydrochloric acid solutions of calcium and sodium chlorides

International Nuclear Information System (INIS)

Kochetkova, N.V.; Bayandina, Yu.E.; Toptygina, G.M.; Shepot'ko, A.O.

1988-01-01

The effect of precipitation duration, acid concentration, indium complexing with chloride ions on the process of indium sulfide chemical precipitation in hydrochloric acid solutions, precipitate composition and dispersity are studied. It is established that indium sulfide solubility increases in solutions with acid concentration exceeding 0.40-0.45 mol/l. Calcium and indium chloride addition to diluted hydrochloric solutions greatly increases the solubility of indium sulfide. The effect of calcium chloride on In 2 S 3 solubility is higher than that of sodium chloride

Neutral complexes of the indium dihalides

Energy Technology Data Exchange (ETDEWEB)

Sinclair, I.; Worrall, I.J. (Lancaster Univ. (UK))

1982-03-15

The neutral complexes In/sub 2/X/sub 4/.2L (X=Cl, Br, I; L 1,4-dioxan, tetrahydropyran, tetrahydrofuran, tetrahydrothiophene), In/sub 2/X/sub 4/.2L (X=Br, I; Ldimethylsulphide), In/sub 2/X/sub 4/.4L (X=Cl, Br, I; Lpiperidine, piperazine, morpholine), and In/sub 2/X/sub 4/.4L (X=Br, I; L=pyridine, dimethylsulphoxide) have been prepared. Solid state Raman spectra indicate that the compounds contain indium-indium bonds.

On the relaxation rate distribution of the photoionized DX centers in indium doped Cd1-xMnxTe

International Nuclear Information System (INIS)

Trzmiel, J; Placzek-Popko, E; Gumienny, Z; Weron, K; Becla, P

2009-01-01

It was recently shown that the kinetics of persistent photoconductivity (PPC) build-up in indium doped Cd 1-x Mn x Te are non-exponential and can be described solely by the stretched-exponential function. The non-exponentiality is attributed to the indium related DX centers present in the materials. In order to explain this observation, low temperature photoconductivity build-up was studied for Cd 1-x Mn x Te:In of two different manganese contents. It was found that this type of response has its origin in the heavy-tailed distribution of the DX centers. The distribution was analyzed in terms of photon flux. Increasing photon flux leads to the more dispersive behavior. It was also confirmed that the heavy-tailed distribution is due to the different local configuration of atoms surrounding DX centers in the alloy.

Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films

International Nuclear Information System (INIS)

Plagemann, A.; Ellmer, K.; Wiesemann, K.

2007-01-01

During the magnetron sputtering from an indium-tin oxide (ITO) target (76 mm diameter) we measured the ion-distribution functions (IDFs) of energetic ions (argon, indium, and oxygen ions) at the substrate surface using a combination of a quadrupole mass spectrometer and an electrostatic energy analyzer. We obtained the IDFs for argon sputtering pressures in the range from 0.08 to 2 Pa and for dc as well as rf (13.56 MHz) plasma excitation with powers from 10 to 100 W. The IDF measurements were performed both over the target center at a target-to-substrate distance of 65 mm and at different positions along the target radius in order to scan the erosion track of the target. The mean kinetic energies of argon ions calculated from the IDFs in the dc plasma decreased from about 30 to 15 eV, when the argon pressure increased from 0.08 to 2 Pa, which is caused by a decrease of the electron temperature also by a factor of 2. Indium atoms exhibit higher mean energies due to their additional energy from the sputtering process. The total metal ion flux turns out to be proportional to the discharge power and the pressure, the latter dependence being due to Penning ionization of the metal atoms (In and Sn). From the scans across the target surface the lateral distributions of metal, oxygen, and argon ions were derived. In the dc discharge the position of the erosion track is reproduced by increased ion intensities, while it is not the case for the rf excited plasma. The lateral variations of the observed species do not influence the lateral resistivity distributions of the deposited ITO films

Plasma/Neutral-Beam Etching Apparatus

Science.gov (United States)

Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

1989-01-01

Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

Science.gov (United States)

Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

2000-01-01

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

Photon interactions in a cesium beam

International Nuclear Information System (INIS)

Nygaard, K.J.; Jones, J.D.; Hebner, R.E. Jr

1974-01-01

Photoionization of excited cesium atoms in the 6 2 P3/2 - state has been studied in a triple crossed-beam experiment. A thermal beam of cesium atoms was intersected by one photon beam of wavelength 8521A that served to excite the atoms and another photon beam with wavelengths below 5060A that served to ionize the excited atoms. The resulting ions were detected with a channel electron multiplier. All background effects were discriminated against by chopping the beam of exciting radiation and by analyzing the net count rate with digital synchronous techniques. The relative cross section for photoionization fo Cs(6 2 P3/2) has been measured from threshold (5060A) to 2500A. The results fall off faster than the theoretical calculations of Weisheit and Norcross

Atom optics

International Nuclear Information System (INIS)

Balykin, V. I.; Jhe, W.

1999-01-01

Atom optics, in analogy to neutron and electron optics, deals with the realization of as a traditional elements, such as lenes, mirrors, beam splitters and atom interferometers, as well as a new 'dissipative' elements such as a slower and a cooler, which have no analogy in an another types of optics. Atom optics made the development of atom interferometer with high sensitivity for measurement of acceleration and rotational possible. The practical interest in atom optics lies in the opportunities to create atom microprobe with atom-size resolution and minimum damage of investigated objects. (Cho, G. S.)

Indium antimonide nanowires arrays for promising thermoelectric converters

Directory of Open Access Journals (Sweden)

Gorokh G. G.

2015-02-01

Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

Tightly confined atoms in optical dipole traps

International Nuclear Information System (INIS)

Schulz, M.

2002-12-01

This thesis reports on the design and setup of a new atom trap apparatus, which is developed to confine few rubidium atoms in ultrahigh vacuum and make them available for controlled manipulations. To maintain low background pressure, atoms of a vapour cell are transferred into a cold atomic beam by laser cooling techniques, and accumulated by a magneto-optic trap (MOT) in a separate part of the vacuum system. The laser cooled atoms are then transferred into dipole traps made of focused far-off-resonant laser fields in single- or crossed-beam geometry, which are superimposed with the center of the MOT. Gaussian as well as hollow Laguerre-Gaussian (LG$ ( 01)$) beam profiles are used with red-detuned or blue-detuned light, respectively. Microfabricated dielectric phase objects allow efficient and robust mode conversion of Gaussian into Laguerre-Gaussian laser beams. Trap geometries can easily be changed due to the highly flexible experimental setup. The dipole trap laser beams are focused to below 10 microns at a power of several hundred milliwatts. Typical trap parameters, at a detuning of several ten nanometers from the atomic resonance, are trag depths of few millikelvin, trap frequencies near 30-kHz, trap light scattering rates of few hundred photons per atom and second, and lifetimes of several seconds. The number of dipole-trapped atoms ranges from more than ten thousand to below ten. The dipole-trapped atoms are detected either by a photon counting system with very efficient straylight discrimination, or by recapture into the MOT, which is imaged onto a sensitive photodiode and a CCD-camera. Due to the strong AC-Stark shift imposed by the high intensity trapping light, energy-selective resonant excitation and detection of the atoms is possible. The measured energy distribution is consistent with a harmonic potential shape and allows the determination of temperatures and heating rates. In first measurements, the thermal energy is found to be about 10 % of the

An advanced case of indium lung disease with progressive emphysema.

Science.gov (United States)

Nakano, Makiko; Tanaka, Akiyo; Hirata, Miyuki; Kumazoe, Hiroyuki; Wakamatsu, Kentaro; Kamada, Dan; Omae, Kazuyuki

2016-09-30

To report the occurrence of an advanced case of indium lung disease with severely progressive emphysema in an indium-exposed worker. A healthy 42-year-old male smoker was employed to primarily grind indium-tin oxide (ITO) target plates, exposing him to indium for 9 years (1998-2008). In 2004, an epidemiological study was conducted on indium-exposed workers at the factory in which he worked. The subject's serum indium concentration (In-S) was 99.7 μg/l, while his serum Krebs von den Lungen-6 level was 2,350 U/ml. Pulmonary function tests showed forced vital capacity (FVC) of 4.17 l (91.5% of the JRS predicted value), forced expiratory volume in 1 s (FEV 1 ) of 3.19 l (80.8% of predicted), and an FEV 1 -to-FVC ratio of 76.5%. A high-resolution chest computed tomography (HRCT) scan showed mild interlobular septal thickening and mild emphysematous changes. In 2008, he was transferred from the ITO grinding workplace to an inspection work section, where indium concentrations in total dusts had a range of 0.001-0.002 mg/m 3 . In 2009, the subject's In-S had increased to 132.1 μg/l, and pulmonary function tests revealed obstructive changes. In addition, HRCT scan showed clear evidence of progressive lung destruction with accompanying severe centrilobular emphysema and interlobular septal thickening in both lung fields. The subject's condition gradually worsened, and in 2015, he was registered with the Japan Organ Transplant Network for lung transplantation (LTx). Heavy indium exposure is a risk factor for emphysema, which can lead to a severity level that requires LTx as the final therapeutic option.

Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

KAUST Repository

Kan, Zhipeng

2018-05-11

Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

Atomic-Layer-Deposited AZO Outperforms ITO in High-Efficiency Polymer Solar Cells

KAUST Repository

Kan, Zhipeng; Wang, Zhenwei; Firdaus, Yuliar; Babics, Maxime; Alshareef, Husam N.; Beaujuge, Pierre

2018-01-01

Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

Experimental atomic and molecular physics research

International Nuclear Information System (INIS)

Anon.

1980-01-01

The Atomic Physics research in the Physics Division consists of five ongoing experimental programs: dissociation and other interactions of energetic molecular ions in solid and gaseous targets; beam-foil research and collision dynamics of heavy ions; photoionization-photoelectron research; spectroscopy of free atoms and molecules, high precision laser-rf double-resonance spectroscopy with atomic and molecular beams; and Moessbauer effect research

Formation of atomic clusters through the laser ablation of refractory materials in a supersonic molecular beam source

International Nuclear Information System (INIS)

Haufler, R.E.; Puretzky, A.A.; Compton, R.N.

1993-01-01

Concepts which guide the design of atomic cluster supersonic beam sources have been developed. These ideas are founded on the knowledge of laser ablation dynamics and are structured in order to take advantage of certain features of the ablation event. Some of the drawbacks of previous cluster source designs become apparent when the sequence of events following laser ablation are clarified. Key features of the new cluster source design include control of the cluster size distribution, uniform performance with a variety of solid materials and elements, high beam intensity, and significant removal of internal energy during the supersonic expansion

Selected topics on surface effects in fusion devices: neutral-beam injectors and beam-direct converters

International Nuclear Information System (INIS)

Kaminsky, M.

1978-01-01

Neutral-beam injectors are being used for the heating and fueling of plasmas in existing devices such as PLT (Princeton), ISX (Oak Ridge) and 2XIIB (Lawrence Livermore Laboratory) and will be used in devices such as TFTR (Princeton), MX (Livermore) and Doublet III (Gulf Atomic). For example, TFTR has been designed to receive a total of 20 MW of 120-keV deuterium atoms in pulses of 0.5-sec duration from 12 neutral beam injectors; for the MX experiment it is planned to inject a total of 750A (equivalent) of deuterium atoms with a mean energy of 56 keV in 0.5-sec pulses. The interaction of energetic deuterium atoms with exposed surfaces of device components such as beam dumps, beam-direct-convertors collectors, beam calorimeters, and armor plates, cause a variety of surface effects which affect deleteriously the operation of such devices. Some of the major effects will be discussed

Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Hsu, C.M. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)], E-mail: tedhsu@mail.stut.edu.tw; Kuo, C.S.; Hsu, W.C.; Wu, W.T. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)

2009-01-01

This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.

A new atomic beam polarized ion source for the Triangle Universities Nuclear Laboratory: overview, operating experience, and performance

International Nuclear Information System (INIS)

Clegg, T.B.; Karwowski, H.J.; Lemieux, S.K.; Sayer, R.W.; Crosson, E.R.; Hooke, W.M.; Howell, C.R.; Lewis, H.W.; Lovette, A.W.; Pfutzner, H.J.; Sweeton, K.A.; Wilburn, W.S.

1995-01-01

A newly constructed source of polarized H ± and D ± ions is described. Atomic H or D beams from a dissociator with a cooled nozzle enter a system of two sextupole magnets and several radio-frequency transitions where they are focused and polarized. They enter a downstream electron-cyclotron-resonance-heated plasma ionizer from which positive ions are extracted. When negative ions are desired, they may be produced from the positive beam by charge-exchange in cesium vapor. Emerging beams are intense, have good polarization, low energy spread, and good optical quality. Descriptions are included for all major systems and for diagnostic procedures used to optimize both the intensity and the polarization of the output H ± or D ± beams obtained. Typical operating experience, performance figures, and a description of routine maintenance procedures are given. ((orig.))

Influence of thermal treatment in N{sub 2} atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films

Energy Technology Data Exchange (ETDEWEB)

Stroescu, H.; Anastasescu, M.; Preda, S.; Nicolescu, M.; Stoica, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409, RO-77125, Bucharest-Magurele (Romania); Kampylafka, V.; Aperathitis, E. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Gartner, M., E-mail: mgartner@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

2013-08-31

We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N{sub 2} atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300–400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment. - Highlights: ► Stability of the films can be monitored by experimental ellipsometric spectra. ► The refractive index of indium tin oxide film on 0.3–30 μm range is reported. ► Si(100) substrate induces rougher film surfaces than Si(111). ► Rapid thermal annealing and normal thermal treatment lead to stable conductive film. ► The samples have a higher preferential orientation after rapid thermal annealing.

Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

International Nuclear Information System (INIS)

Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

2016-01-01

The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

High atomic weight isotope separator

International Nuclear Information System (INIS)

Book, D.L.

1978-01-01

A continuously operating device is described which separates one isotopic species of a given element from a mixture. The given element is vaporized and formed into a neutral beam containing the isotopes desired to be separated. The plasma is accelerated through a laser beam which is formed by two separate lasers which operate in the continuous wave mode in which the beams are as nearly as possible in the same beam path. The two laser output beams excite and ionize the isotope of interest while leaving the remaining atoms unaffected. The ionized isotopes are then separated from the beam by an electrostatic deflection technique and the unaffected atoms continue on in their path and are directed to a recovery device

Electrochemical pulsed deposition of platinum nanoparticles on indium tin oxide/polyethylene terephthalate as a flexible counter electrode for dye-sensitized solar cells

International Nuclear Information System (INIS)

Wei, Yu-Hsuan; Chen, Chih-Sheng; Ma, Chen-Chi M.; Tsai, Chuen-Horng; Hsieh, Chien-Kuo

2014-01-01

In this study, a pulsed-mode electrochemical deposition (Pulse-ECD) technique was employed to deposit platinum nanoparticles (PtNPs) on the indium tin oxide/polyethylene terephthalate (ITO/PET) substrate as a flexible counter electrode for dye-sensitized solar cells (DSSCs). The characteristic properties of the Pulse-ECD PtNPs were prepared and compared to the traditional (electron beam) Pt film. The surface morphologies of the PtNPs were examined by field emission scanning electron microscopy (FE-SEM) and the atomic force microscope (AFM). The FE-SEM results showed that our PtNPs were deposited uniformly on the ITO/PET flexible substrates via the Pulse-ECD technique. The AFM results indicated that the surface roughness of the pulsed PtNPs influenced the power conversion efficiency (PCE) of DSSCs, due to the high specific surface area of PtNPs which enhanced the catalytic activities for the reduction (I 3 − to I − ) of redox electrolyte. In combination with a N719 dye-sensitized TiO 2 working electrode and an iodine-based electrolyte, the DSSCs with the PtNPs flexible counter electrode showed a PCE of 4.3% under the illumination of AM 1.5 (100 mW cm −2 ). The results demonstrated that the Pulse-ECD PtNPs are good candidate for flexible DSSCs. - Highlights: • We used indium tin oxide/polyethylene terephthalate as a flexible substrate. • We utilized pulse electrochemical deposition to deposit platinum nanoparticles. • We synthesized a flexible counter electrode for dye-sensitized solar cell (DSSC). • The power conversion efficiency of DSSC was measured to be 4.3%

Application of the backscattering of an atomic beam of thermal energy to the study of the vibrational properties of metal surfaces

International Nuclear Information System (INIS)

Lapujoulade, J.; Lejay, Y.

1975-01-01

Vibrational properties of metal surfaces (surface phonons, surface Debye temperatures) are less known than bulk ones since common investigation methods (neutron, X-rays) are not sensitive to surface properties. A study of the backscattering of an atomic beam may give surface specific informations. The backscattering of noble gas (He, Ne, Ar) from a clean copper single crystal ((100) face) was experimentally studied. The experimental set-up allows to measure the space repartition well as the velocity distribution of the scattered atoms. If the collisions is purely elastic an analysis of the thermal dependence of the specular peak by means of the Debye Waller formula will give the mean square displacements of surface atoms. It is shown however that this simple case is not fulfilled with helium in ordinary beam or solid temperatures. If the collision is inelastic, but dominated by single phonon transfers (as it seems to be the case for helium) information should to get about the phonon dispersion relation of surface atoms. When many-phonon collision occur (Ne and Ar) the analysis is more difficult. A comparison of the experimental result with an approximate calculation of G. Armand is given [fr

History of early atomic clocks

International Nuclear Information System (INIS)

Ramsey, N.F.

2005-01-01

This review of the history of early atomic clocks includes early atomic beam magnetic resonance, methods of separated and successive oscillatory fields, microwave absorption, optical pumping and atomic masers. (author)

Bolt beam propagation analysis

Science.gov (United States)

Shokair, I. R.

BOLT (Beam on Laser Technology) is a rocket experiment to demonstrate electron beam propagation on a laser ionized plasma channel across the geomagnetic field in the ion focused regime (IFR). The beam parameters for BOLT are: beam current I(sub b) = 100 Amps, beam energy of 1--1.5 MeV (gamma =3-4), and a Gaussian beam and channel of radii r(sub b) = r(sub c) = 1.5 cm. The N+1 ionization scheme is used to ionize atomic oxygen in the upper atmosphere. This scheme utilizes 130 nm light plus three IR lasers to excite and then ionize atomic oxygen. The limiting factor for the channel strength is the energy of the 130 nm laser, which is assumed to be 1.6 mJ for BOLT. At a fixed laser energy and altitude (fixing the density of atomic oxygen), the range can be varied by adjusting the laser tuning, resulting in a neutralization fraction axial profile of the form: f(z) = f(sub 0) e(exp minus z)/R, where R is the range. In this paper we consider the propagation of the BOLT beam and calculate the range of the electron beam taking into account the fact that the erosion rates (magnetic and inductive) vary with beam length as the beam and channel dynamically respond to sausage and hose instabilities.

Laser stabilisation for velocity-selective atomic absorption

NARCIS (Netherlands)

Meijer, H.A.J.; Meulen, H.P. van der; Ditewig, F.; Wisman, C.J.; Morgenstern, R.

1987-01-01

A relatively simple method is described for stabilising a dye laser at a frequency ν = ν0 + νc in the vicinity of an atomic resonance frequency ν0. The Doppler effect is exploited by looking for atomic fluorescence when a laser beam is crossed with an atomic beam at certain angles αi. Absolute

Study on indium leaching from mechanically activated hard zinc residue

Directory of Open Access Journals (Sweden)

Yao J.H.

2011-01-01

Full Text Available In this study, changes in physicochemical properties and leachability of indium from mechanically activated hard zinc residue by planetary mill were investigated. The results showed that mechanical activation increased specific surface area, reaction activity of hard zinc residue, and decreased its particle size, which had a positive effect on indium extraction from hard zinc residue in hydrochloric acid solution. Kinetics of indium leaching from unmilled and activated hard zinc residue were also investigated, respectively. It was found that temperature had an obvious effect on indium leaching rate. Two different kinetic models corresponding to reactions which are diffusion controlled, [1-(1- x1/3]2=kt and (1-2x/3-(1-x2/3=kt were used to describe the kinetics of indium leaching from unmilled sample and activated sample, respectively. Their activation energies were determined to be 17.89 kJ/mol (umilled and 11.65 kJ/mol (activated within the temperature range of 30°C to 90°C, which is characteristic for a diffusion controlled process. The values of activation energy demonstrated that the leaching reaction of indium became less sensitive to temperature after hard zinc residue mechanically activated by planetary mill.

The Availability of Indium: The Present, Medium Term, and Long Term

Energy Technology Data Exchange (ETDEWEB)

Lokanc, Martin [Colorado School of Mines, Golden, CO (United States); Eggert, Roderick [Colorado School of Mines, Golden, CO (United States); Redlinger, Michael [Colorado School of Mines, Golden, CO (United States)

2015-10-01

Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

Characterization of the Plasma Edge for Technique of Atomic Helium Beam in the CIEMAT Fusion Device

International Nuclear Information System (INIS)

Hidalgo, A.

2003-01-01

In this report, the measurement of Electron Temperature and Density in the Boundary Plasma of TJ-II with a Supersonic Helium Beam Diagnostic and work devoted to the upgrading of this technique are described. Also, simulations of Laser Induced Fluorescence (LIF) studies of level populations of electronically excited He atoms are shown. This last technique is now being installed in the CIEMAT fusion device. (Author )

Labelling of bacteria with indium chelates

International Nuclear Information System (INIS)

Kleinert, P.; Pfister, W.; Endert, G.; Sproessig, M.

1985-01-01

The indium chelates were prepared by reaction of radioactive indiumchloride with 10 μg oxine, 15 μg tropolone and 3 mg acetylacetone, resp. The formed chelates have been incubated with 10 9 germs/ml for 5 minutes, with labelling outputs from 90 to 95%. Both gram-positive (Streptococcus, Staphylococcus) and gram-negative bacteria (Escherichia coli) can be labelled. The reproductive capacity of the bacteria was not impaired. The application of indium labelled bacteria allows to show the distribution of microorganisms within the living organism and to investigate problems of bacterial adherence. (author)

Indium-111 oxine labelling of white blood cells

International Nuclear Information System (INIS)

Lavender, J.P.; Silvester, D.J.; Goldman, J.; Hammersmith Hospital, London

1978-01-01

Following work done by Professor John McAfee and Mathew Thakur at the MRS Cyclotron Unit a method is available for labelling cells with indium-111 which results in a stable intracellular marker. The method uses indium-111-8 hydroxyquinoline (111In oxine) which is a lipoid soluble complex which goes across the cell membrane and results in the deposition of indium into various subcellular structures. It has been applied to various preparations of white cells, platelets and also malignant cells. Autologous granulocytes have been used to identify inflammatory lesions in 35 patients. By similar means autologous lymphocytes can also be labelled and reinfused. Lymphocytes have been shown in animals to circulate from the blood via the lymphatic system and then returning to the blood once more. The same phenomenon can be seen in man using indium labelled lymphocytes. Lymph nodes become visible at between 12 and 18 hours and recirculation of labelled cells can be shown on the blood activity curves. Certain problems arise concerning cell behaviour after labelling which appear due to irradiation of cells rather than chemical toxicity. (author)

Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Lalit; Hughes, Greg [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland)

2013-03-15

High resolution synchrotron radiation core level photoemission measurements have been used to study the high temperature stability of sulphur passivated InGaAs surfaces and comparisons made with atomically clean surfaces subjected to the same annealing temperatures. Sulphur passivation of clean InGaAs surfaces prepared by the thermal removal of an arsenic capping layer was carried out using an in situ molecular sulphur treatment in ultra high vacuum. The elemental composition of the surfaces of these materials was measured at a series of annealing temperatures up to 530 C. Following a 480 C anneal In:Ga ratio was found to have dropped by 33% on sulphur passivated surface indicating a significant loss of indium, while no drop in indium signal was recorded at this temperature on the atomically InGaAs surface. No significant change in the As surface concentration was measured at this temperature. These results reflect the reduced thermal stability of the sulphur passivated InGaAs compared to the atomically clean surface which has implications for device fabrication. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Development of a two-dimensional simulation code (koad) including atomic processes for beam direct energy conversion

International Nuclear Information System (INIS)

Yamamoto, Y.; Yoshikawa, K.; Hattori, Y.

1987-01-01

A two-dimensional simulation code for the beam direct energy conversion called KVAD (Kyoto University Advanced DART) including various loss mechanisms has been developed, and shown excellent agreement with the authors' experiments using the He + beams. The beam direct energy converter (BDC) is the device to recover the kinetic energy of unneutralized ions in the neutral beam injection (NBI) system directly into electricity. The BDC is very important and essential not only to the improvements of NBI system efficiency, but also to the relaxation of high heat flux problems on the beam dump with increase of injection energies. So far no simulation code could have successfully predicted BDC experimental results. The KUAD code applies, an optimized algorithm for vector processing, the finite element method (FEM) for potential calculation, and a semi-automatic method for spatial segmentations. Since particle trajectories in the KVAD code are analytically solved, very high speed tracings of the particle could be achieved by introducing an adjacent element matrix to identify the neighboring triangle elements and electrodes. Ion space charges are also analytically calculated by the Cloud in Cell (CIC) method, as well as electron space charges. Power losses due to atomic processes can be also evaluated in the KUAD code

Formation and growth of embedded indium nanoclusters by In2+ implantation in silica

International Nuclear Information System (INIS)

Santhana Raman, P.; Nair, K.G.M.; Kesavamoorthy, R.; Panigrahi, B.K.; Dhara, S.; Ravichandran, V.

2007-01-01

Indium nanoclusters are synthesized in an amorphous silica matrix using an ion-implantation technique. Indium ions (In 2+ ) with energy of 890 keV are implanted on silica to fluences in the range of 3 x 10 16 -3 x 10 17 cm -2 . The formation of indium nanoclusters is confirmed by optical absorption spectrometry and glancing incidence X-ray diffraction studies. A low frequency Raman scattering technique is used to study the growth of embedded indium nanoclusters in the silica matrix as a function of fluence and post-implantation annealing duration. Rutherford backscattering spectrometry studies show the surface segregation of implanted indium. Photoluminescence studies indicate the formation of a small quantity of indium oxide phase in the ion-implanted samples. (orig.)

Molecular beam sampling of a hollow cathode arc

International Nuclear Information System (INIS)

Theuws, P.

1981-01-01

This thesis deals with the description of the process of molecular beam sampling of a Hollow Cathode Arc. The aim of the study is twofold, i.e. investigation of the applicability of molecular beam sampling as a plasma diagnostic and the use of a Hollow Cathode Arc as a high intensity beam source for ground state atoms and metastable state atoms in the superthermal energy range. Suitable models are introduced, describing the process of molecular beam sampling of both ground state atoms and metastable state atoms. Fast ground state atoms produced by ion-atom collisions. The experimental facilities, i.e. the Hollow Cathode Arc, the time-of-flight machine and the dye laser system are described. And an alternative detection scheme for ground state atoms is presented and experimental results on the molecular beam sampling of a low density plasma (densities 10 19 -10 20 m -3 ) in the long arc configuration are reported. The results on the short arc configuration (densities 10 21 -10 22 m -3 ) are discussed. (Auth.)

Uses of laser optical pumping to produce polarized ion beams

International Nuclear Information System (INIS)

Anderson, L.W.

1983-01-01

Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H - or 3 He - ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams

Thermoelectric flux effect in superconducting indium

International Nuclear Information System (INIS)

Van Harlingen, D.J.

1977-01-01

In this paper we discuss a thermoelectric effect in superconductors which provides a mechanism for studying quasiparticle relaxation and scattering processes in non-equilibrium superconductors by transport measurements. We report measurements of the thermoelecric flux effect in samples consisting of indium and lead near the In transition temperature; in this temperature range, the contribution to DELTA/sub TAU/ from the Pb is insignificant and so values of OMEGA(T) are obtained for indium. The results of our experiments may be summarized as follows: (1) we have a thermally-generated flux effect in 5 superconducting In-Pb toroidal samples, (2) experimental tests suggest that the observed effect does indeed arise from the proposed thermoelectric flux effect, (3) OMEGA(T) for indium is found to diverge as (T/sub c/ - T)/sup -3/2/ more rapidly than predicted by simple theory, (4) OMEGA(T) at T/T sub c/ = .999 is nearly 10/sup 5/ larger than initially expected, (5) OMEGA (T) roughly correlates with the magnitude of the normal state thermoelectric coefficient for our samples

Investigation into cathode polarization during deposition of rhodium-nickel and rhodium-indium alloys

International Nuclear Information System (INIS)

Evdokimova, N.V.; Byacheslavov, P.M.; Lokshtanova, O.G.

1979-01-01

The results of kinetic regularities experimental investigations during electrodeposition of rhodium-nickel and rhonium-indium alloys are presented. Methods of general and partial polarization curves have been used to show the nature of polarization during the rhonium-nickel and rhodium-indium alloys deposition. It is shown that indium into the rhodium-indium alloy and nickel into the rhodium-nickel alloy deposit with great depolarization ( PHIsub(In)sup(0)=-0.33B, PHIsub(Ni)sup(0)=-0.23B). Indium and nickel in pure form do not deposit from the electrolytes of the given composition (H 2 SO 4 - 50 g/l, HNH 2 SO 3 -10 g/l). The recalculation of partial polarization curve of indium precipitation into the rhodium-indium alloy in the mixed kinetics coordinates gives a straight line with 40 mV inclination angle. This corresponds to the delayed stage of the second electron addition with the imposition of diffusion limitations

Average formation number n-barOH of colloid-type indium hydroxide

International Nuclear Information System (INIS)

Stefanowicz, T.; Szent-Kirallyine Gajda, J.

1983-01-01

Indium perchlorate in perchloric acid solution was titrated with sodium hydroxide solution to various pH values. Indium hydroxide colloid was removed by ultracentrifugation and supernatant solution was titrated with base to neutral pH. The two-stage titration data were used to calculate the formation number of indium hydroxide colloid, which was found to equal n-bar OH = 2.8. (author)

Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

International Nuclear Information System (INIS)

Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

2011-01-01

Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

Ion-atom charge-transfer system for a heavy-ion-beam pumped laser

International Nuclear Information System (INIS)

Ulrich, A.; Gernhaeuser, R.; Kroetz, W.; Wieser, J.; Murnick, D.E.

1994-01-01

An Ar target to which Cs vapor could be added, excited by a pulsed beam of 100-MeV 32 S ions, was studied as a prototype ion-atom charge-transfer system for pumping short-wavelength lasers. Low-velocity Ar 2+ ions were efficiently produced; a huge increase in the intensity of the Ar II 4d-4p spectral lines was observed when Cs vapor was added to the argon. This observation is explained by a selective charge transfer of the Cs 6s electron into the upper levels of the observed transitions. A rate constant of (1.4±0.2)x10 -9 cm 3 /s for the transfer process was determined

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

Energy Technology Data Exchange (ETDEWEB)

Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of)

2016-08-15

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

Quantification of indium in steel using PIXE

International Nuclear Information System (INIS)

Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

1989-01-01

The quantitative analysis of steel endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.)

Quantification of indium in steel using PIXE

Energy Technology Data Exchange (ETDEWEB)

Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

1989-04-01

The quantitative analysis of steel endodontics tools was carried out using low-energy protons (/le/ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.).

Photoconductivity in reactively evaporated copper indium selenide thin films

Science.gov (United States)

Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

2014-01-01

Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

Electron-tunneling observation of local excited states in manganese-doped indium

International Nuclear Information System (INIS)

Tsang, J.; Ginsberg, D.M.

1980-01-01

We have measured the electron-tunneling characteristics of a dilute indium-manganese alloy. Well-defined structure was observed, corresponding to a band of local excited states within the energy gap. The measurements were made on two samples, and were quantitatively compared with the theory of Shiba and of Rusinov. We obtained good agreement of the tunneling data with the theory by taking into account only s-wave scattering of conduction electrons from the magnetic-impurity atoms. Even better agreement was obtained by including p- and d-wave scattering. Only by including these higher partial waves could we account for the magnitude of the observed depression of the transition temperature. The phase shifts used are in good agreement with band-theory values calculated recently

The indium-oxygen system, ch. 5

International Nuclear Information System (INIS)

Dillen, A.J. van

1977-01-01

This chapter is divided into three sections: 1) a survey of the literature concerning the indiumoxygen system, 2) the adsorption of oxygen at pure and partially oxidized indium surfaces in the temperature range 20-180degC, and 3) the oxidation of indium at temperatures above 180degC. The oxygen uptake is determined volumetrically and gravimetrically. The influence of the melting point is considered and the results are compared with data from the literature. The oxide layer is amorphous at lower temperatures but above 350degC, crystallisation of In 2 O 3 takes place

Indium hydroxide to oxide decomposition observed in one nanocrystal during in situ transmission electron microscopy studies

International Nuclear Information System (INIS)

Miehe, Gerhard; Lauterbach, Stefan; Kleebe, Hans-Joachim; Gurlo, Aleksander

2013-01-01

The high-resolution transmission electron microscopy (HR-TEM) is used to study, in situ, spatially resolved decomposition in individual nanocrystals of metal hydroxides and oxyhydroxides. This case study reports on the decomposition of indium hydroxide (c-In(OH) 3 ) to bixbyite-type indium oxide (c-In 2 O 3 ). The electron beam is focused onto a single cube-shaped In(OH) 3 crystal of {100} morphology with ca. 35 nm edge length and a sequence of HR-TEM images was recorded during electron beam irradiation. The frame-by-frame analysis of video sequences allows for the in situ, time-resolved observation of the shape and orientation of the transformed crystals, which in turn enables the evaluation of the kinetics of c-In 2 O 3 crystallization. Supplementary material (video of the transformation) related to this article can be found online at (10.1016/j.jssc.2012.09.022). After irradiation the shape of the parent cube-shaped crystal is preserved, however, its linear dimension (edge) is reduced by the factor 1.20. The corresponding spotted selected area electron diffraction (SAED) pattern representing zone [001] of c-In(OH) 3 is transformed to a diffuse strongly textured ring-like pattern of c-In 2 O 3 that indicates the transformed cube is no longer a single crystal but is disintegrated into individual c-In 2 O 3 domains with the size of about 5–10 nm. The induction time of approximately 15 s is estimated from the time-resolved Fourier transforms. The volume fraction of the transformed phase (c-In 2 O 3 ), calculated from the shrinkage of the parent c-In(OH) 3 crystal in the recorded HR-TEM images, is used as a measure of the kinetics of c-In 2 O 3 crystallization within the framework of Avrami–Erofeev formalism. The Avrami exponent of ∼3 is characteristic for a reaction mechanism with fast nucleation at the beginning of the reaction and subsequent three-dimensional growth of nuclei with a constant growth rate. The structural transformation path in reconstructive

Evolution of end-of-range damage and transient enhanced diffusion of indium in silicon

Science.gov (United States)

Noda, T.

2002-01-01

Correlation of evolution of end-of-range (EOR) damage and transient enhanced diffusion (TED) of indium has been studied by secondary ion mass spectrometry and transmission electron microscopy. A physically based model of diffusion and defect growth is applied to the indium diffusion system. Indium implantation with 200 keV, 1×1014/cm2 through a 10 nm screen oxide into p-type Czochralski silicon wafer was performed. During postimplantation anneal at 750 °C for times ranging from 2 to 120 min, formation of dislocation loops and indium segregation into loops were observed. Simulation results of evolution of EOR defects show that there is a period that {311} defects dissolve and release free interstitials before the Ostwald ripening step of EOR dislocation loops. Our diffusion model that contains the interaction between indium and loops shows the indium pileup to the loops. Indium segregation to loops occurs at a pure growth step of loops and continues during the Ostwald ripening step. Although dislocation loops and indium segregation in the near-surface region are easily dissolved by high temperature annealing, EOR dislocation loops in the bulk region are rigid and well grown. It is considered that indium trapped by loops with a large radius is energetically stable. It is shown that modeling of the evolution of EOR defects is important for understanding indium TED.

Atomic collisions involving pulsed positrons

DEFF Research Database (Denmark)

Merrison, J. P.; Bluhme, H.; Field, D.

2000-01-01

Conventional slow positron beams have been widely and profitably used to study atomic collisions and have been instrumental in understanding the dynamics of ionization. The next generation of positron atomic collision studies are possible with the use of charged particle traps. Not only can large...... instantaneous intensities be achieved with in-beam accumulation, but more importantly many orders of magnitude improvement in energy and spatial resolution can be achieved using positron cooling. Atomic collisions can be studied on a new energy scale with unprecedented precion and control. The use...

Effective absorption correction for energy dispersive X-ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers.

Science.gov (United States)

Wang, X; Chauvat, M-P; Ruterana, P; Walther, T

2017-12-01

We have applied our previous method of self-consistent k*-factors for absorption correction in energy-dispersive X-ray spectroscopy to quantify the indium content in X-ray maps of thick compound InGaN layers. The method allows us to quantify the indium concentration without measuring the sample thickness, density or beam current, and works even if there is a drastic local thickness change due to sample roughness or preferential thinning. The method is shown to select, point-by-point in a two-dimensional spectrum image or map, the k*-factor from the local Ga K/L intensity ratio that is most appropriate for the corresponding sample geometry, demonstrating it is not the sample thickness measured along the electron beam direction but the optical path length the X-rays have to travel through the sample that is relevant for the absorption correction. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

International Nuclear Information System (INIS)

Chuang, M.J.; Huang, H.F.; Wen, C.H.; Chu, A.K.

2010-01-01

Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 o C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.

Isotopic separation of 235U and 238U in an atomic beam with selective two-step photo-ionisation

International Nuclear Information System (INIS)

Boehm, H.D.V.

1977-01-01

The present work gives a report on investigations on isotope separation of 235 U and 238 U by means of selective two-stage photo-ionization on atomic uranium. An atomic beam of sufficient particle density was produced by dissociation of URe 2 in an electron beam heated tungsten furnace at a temperature of 2.500 k. A continuously operated rhodamin-69 dye laser with a maximum output of 120 mW and about 50 mHz band width in one-made operation was used for selective excitation from the ground state. From this state of excitation, ionization resulted achieving a light power of 1.8 W below 3030 A in the reaction volume. The measured separation factors show that the laser method enables the enrichment of uranium to the required valve of three or more percent 235 U for light water reactors in a single separation step. The hyperfine structure could be considerably better resolved compared to earlier investigations, so that it was possible for the first time to identify and measure hitherto unobserved weak components. (orig.) [de

Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

Directory of Open Access Journals (Sweden)

Hope Greg

2008-01-01

Full Text Available Abstract Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO43-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template and SDS (soft template.

Ghost imaging with atoms

Science.gov (United States)

Khakimov, R. I.; Henson, B. M.; Shin, D. K.; Hodgman, S. S.; Dall, R. G.; Baldwin, K. G. H.; Truscott, A. G.

2016-12-01

Ghost imaging is a counter-intuitive phenomenon—first realized in quantum optics—that enables the image of a two-dimensional object (mask) to be reconstructed using the spatio-temporal properties of a beam of particles with which it never interacts. Typically, two beams of correlated photons are used: one passes through the mask to a single-pixel (bucket) detector while the spatial profile of the other is measured by a high-resolution (multi-pixel) detector. The second beam never interacts with the mask. Neither detector can reconstruct the mask independently, but temporal cross-correlation between the two beams can be used to recover a ‘ghost’ image. Here we report the realization of ghost imaging using massive particles instead of photons. In our experiment, the two beams are formed by correlated pairs of ultracold, metastable helium atoms, which originate from s-wave scattering of two colliding Bose-Einstein condensates. We use higher-order Kapitza-Dirac scattering to generate a large number of correlated atom pairs, enabling the creation of a clear ghost image with submillimetre resolution. Future extensions of our technique could lead to the realization of ghost interference, and enable tests of Einstein-Podolsky-Rosen entanglement and Bell’s inequalities with atoms.

Method for forming indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Evolution from Rydberg gas to ultracold plasma in a supersonic atomic beam of Xe

International Nuclear Information System (INIS)

Hung, J; Sadeghi, H; Schulz-Weiling, M; Grant, E R

2014-01-01

A Rydberg gas of xenon, entrained in a supersonic atomic beam, evolves slowly to form an ultracold plasma. In the early stages of this evolution, when the free-electron density is low, Rydberg atoms undergo long-range ℓ-mixing collisions, yielding states of high orbital angular momentum. The development of high-ℓ states promotes dipole–dipole interactions that help to drive Penning ionization. The electron density increases until it reaches the threshold for avalanche. Ninety μs after the production of a Rydberg gas with the initial state, n 0 ℓ 0 =42d, a 432 V cm −1 electrostatic pulse fails to separate charge in the excited volume, an effect which is ascribed to screening by free electrons. Photoexcitation cross sections, observed rates of ℓ-mixing, and a coupled-rate-equation model simulating the onset of the electron-impact avalanche point consistently to an initial Rydberg gas density of 5×10 8 cm −3 . (paper)

Evolution from Rydberg gas to ultracold plasma in a supersonic atomic beam of Xe

Science.gov (United States)

Hung, J.; Sadeghi, H.; Schulz-Weiling, M.; Grant, E. R.

2014-08-01

A Rydberg gas of xenon, entrained in a supersonic atomic beam, evolves slowly to form an ultracold plasma. In the early stages of this evolution, when the free-electron density is low, Rydberg atoms undergo long-range \\ell -mixing collisions, yielding states of high orbital angular momentum. The development of high-\\ell states promotes dipole-dipole interactions that help to drive Penning ionization. The electron density increases until it reaches the threshold for avalanche. Ninety μs after the production of a Rydberg gas with the initial state, {{n}_{0}}{{\\ell }_{0}}=42d, a 432 V cm-1 electrostatic pulse fails to separate charge in the excited volume, an effect which is ascribed to screening by free electrons. Photoexcitation cross sections, observed rates of \\ell -mixing, and a coupled-rate-equation model simulating the onset of the electron-impact avalanche point consistently to an initial Rydberg gas density of 5\\times {{10}^{8}}\\;c{{m}^{-3}}.

The effect of annealing ambient on surface segregation in indium implanted sapphire

International Nuclear Information System (INIS)

Sood, D.K.; Victoria University of Technology, Melbourne; Zhou, W.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai Institute of Metallurgy; Cao, D.X.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai, SH

1991-01-01

A systematic study of the effect of annealing ambient on both indium surface segregation and lattice damage recovery of single crystal Al 2 O 3 has been done by performing 1 hour anneals at 800 deg C for the samples identically implanted with indium ions at 100keV energy to a high dose of 5x10 16 ions/cm 2 . Following solid phase epitaxial re-crystallization of amorphous layer, the indium dopant shows rapid thermal migration. The indium redistribution consists of 2 parts: 1. appreciable broadening corresponding to diffusion within the amorphous layer, and 2. indium segregation to the free surface to form In 2 O 3 , or escape out of the surface to sublime into the surrounding ambient. Lattice damage recovery depends on indium concentration profile in amorphous layer of Al 2 O 3 which is directly influenced by the annealing ambient. It is confirmed that the presence of moisture or oxygen in annealing ambient results in In 2 O 3 formation on the surface. (author). 6 refs.; 3 figs.; 1 tab

Radiochemical studies of the separation of some chloro-complexes of tin, antimony, cadmium and indium

International Nuclear Information System (INIS)

Ramamoorthy, N.; Mani, R.S.

1976-01-01

Radioisotopes of tin, antimony, cadmium and indium such as tin-113, antimony-124, antimony-125, cadmium-109, cadmium-115, indium-113m and indium-111 find extensive applications as tracers in various fields. These isotopes are produced by irradiation of targets in a reactor or a cyclotron. It is usually observed that in addition to the nuclear reactions giving rise to the desired isotopes, side reactions also take place giving rise to radionuclidic contaminants. Thus, antimony-125, indium-114m and indium-114 will be present in the cyclotron produced indium-111. The authors have studied column chromatography over hydrous zirconia for the separation of antimony from tin and indium, and cadmium from indium. These studies have thrown light on the role and behaviour of antimony-125 present as an impurity in tin-113 during the preparation of tin-113-indium-113m generators and have indicated methods for the preparation of 115 Cd-sup(115m)In generators and for separation of 111 In from proton irradiated cadmium targets. (Authors)

First-principles investigation of indium diffusion in a silicon substrate

International Nuclear Information System (INIS)

Yoon, Kwan-Sun; Hwang, Chi-Ok; Yoo, Jae-Hyun; Won, Tae-Young

2006-01-01

In this paper, we report the total energy, the minimum energy path, and the migration energy of indium in a silicon substrate by using ab-initio calculations. Stable configurations during indium diffusion were obtained from the calculation of the total energy, and we estimated the minimum energy path (MEP) with the nudged elastic band (NEB) method. After finding the MEP, we found the energy barrier for the diffusion of indium to be 0.8 eV from an exact calculation of the total energies at the minimum and the transition state.

Spectrophotometric determination of indium with chromazurol S and dimethyllaurylbenzylammonium bromide

International Nuclear Information System (INIS)

Kwapulinska, G.; Buhl, F.

1988-01-01

The ternary system: indium-chromazurol S (CHAS)-dimethyllaurylbenzylammonium bromide (ST) was applied for determination of microgramme amounts of indium. The addition of ST enhances the sensitivity of the method; at λ max =625 nm the molar absorptivity of In-CHAS-ST complex equals 1.74 x 10 5 . The system obeyes the Lambert-Beer law in the range of indium concentration from 0.04 to 0.48 ppm. The maximal absorbance was obtained at pH 6. The complex is formed immediately and is stable during 2 hours. 3 figs., 10 refs. (author)

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

Science.gov (United States)

Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

2009-01-01

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Polycrystalline Mn-alloyed indium tin oxide films

International Nuclear Information System (INIS)

Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

2008-01-01

Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing

International Nuclear Information System (INIS)

Carder, D.A.; Markwitz, A.; Reeves, R.J.; Kennedy, J.; Fang, F.

2013-01-01

Nanocrystals of PbSe have been fabricated in a silicon dioxide matrix by sequential low energy ion implantation followed by an electron beam annealing step. Transmission electron microscopy reveals PbSe nanocrystals with typical sizes between 3 and 10 nm in the sub-surface region. Rutherford Backscattering Spectrometry has been used to study the total atomic retention, as a function of implanted atoms, following annealing. Photoluminescence was observed in various samples, at 4 K, as a broad peak between 1.4 and 2.0 μm, with observation of a dependence of the peak wavelength on annealing temperature. Room temperature photoluminescence was observed for samples with a high retention of implanted atoms, demonstrating the importance of nanocrystal density for achieving ambient temperature emission in these systems

Blocking of indium incorporation by antimony in III-V-Sb nanostructures

International Nuclear Information System (INIS)

Sanchez, A M; Beltran, A M; Ben, T; Molina, S I; Beanland, R; Gass, M H; De la Pena, F; Walls, M; Taboada, A G; Ripalda, J M

2010-01-01

The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

Anelasticity of polycrystalline indium

Energy Technology Data Exchange (ETDEWEB)

Sapozhnikov, K., E-mail: k.sapozhnikov@mail.ioffe.ru [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Golyandin, S. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Kustov, S. [Dept. de Fisica, Universitat de les Illes Balears, Cra Valldemossa km 7.5, E 07122 Palma de Mallorca (Spain)

2009-09-15

Mechanisms of anelasticity of polycrystalline indium have been studied over wide ranges of temperature (7-320 K) and strain amplitude (2 x 10{sup -7}-3.5 x 10{sup -4}). Measurements of the internal friction and Young's modulus have been performed by means of the piezoelectric resonant composite oscillator technique using longitudinal oscillations at frequencies of about 100 kHz. The stages of the strain amplitude dependence of the internal friction and Young's modulus defect, which can be attributed to dislocation - point defect and dislocation - dislocation interactions, have been revealed. It has been shown that thermal cycling gives rise to microplastic straining of polycrystalline indium due to the anisotropy of thermal expansion and to appearance of a 'recrystallization' internal friction maximum in the temperature spectra of amplitude-dependent anelasticity. The temperature range characterized by formation of Cottrell's atmospheres of point defects around dislocations has been determined from the acoustic data.

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

International Nuclear Information System (INIS)

Lai, Wang; Jia-Xing, Wang; Wei, Zhao; Xiang, Zou; Yi, Luo

2010-01-01

Blue In 0.2 Ga 0.8 N multiple quantum wells (MQWs) with In x Ga 1–x N (x = 0.01–0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation. (condensed matter: structure, thermal and mechanical properties)

Photoluminescence of monovalent indium centres in phosphate glass

OpenAIRE

Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

2015-01-01

Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

Laser-induced fluorescence line narrowing in atomic vapors

International Nuclear Information System (INIS)

Meier, T.; Schuessler, H.A.

1983-01-01

The use of highly monochromatic light allows the selective excitation of atoms in vapors if excitation and detection of the fluorescence is carried out collinearly. The atoms capable of absorbing light then form an atomic beam of well defined velocity along the direction of the laser beam, but no velocity selection occurs perpendicular to it. The potential of the technique for Doppler-free atomic spectroscopy and for the study of excited atom collisions is demonstrated using the Na D 1 line as an example

Surface passivation function of indium-tin-oxide-based nanorod structural sensors

International Nuclear Information System (INIS)

Lin, Tzu-Shun; Lee, Ching-Ting; Lee, Hisn-Ying; Lin, Chih-Chien

2012-01-01

Employing self-shadowing traits of an oblique-angle electron-beam deposition system, various indium tin oxide (ITO) nanorod arrays were deposited on a silicon substrate and used as extended-gate field-effect-transistor (EGFET) pH sensors. The length and morphology of the deposited ITO nanorod arrays could be changed and controlled under different deposition conditions. The ITO nanorod structural EGFET pH sensors exhibited high sensing performances owing to the larger sensing surface area. The sensitivity of the pH sensors with 150-nm-length ITO nanorod arrays was 53.96 mV/pH. By using the photoelectrochemical treatment of the ITO nanorod arrays, the sensitivity of the pH sensors with 150-nm-length passivated ITO nanorod arrays was improved to 57.21 mV/pH.

Atomic and molecular physics with ion storage rings

International Nuclear Information System (INIS)

Larsson, M.

1995-01-01

Advances in ion-source, accelerator and beam-cooling technology have made it possible to produce high-quality beams of atomic ions in arbitrary charged states as well as molecular and cluster ions are internally cold. Ion beams of low emittance and narrow momentum spread are obtained in a new generation of ion storage-cooler rings dedicated to atomic and molecular physics. The long storage times (∼ 5 s ≤ τ ≤ days) allow the study of very slow processes occurring in charged (positive and negative) atoms, molecules and clusters. Interactions of ions with electrons and/or photons can be studied by merging the stored ion beam with electron and laser beams. The physics of storage rings spans particles having a charge-to-mass ratio ranging from 60 + and C 70 + ) to 0.4 - 1.0 (H + , D + , He 2+ , ..., U 92+ ) and collision processes ranging from <1 meV to ∼ 70 GeV. It incorporates, in addition to atomic and molecular physics, tests of fundamental physics theories and atomic physics bordering on nuclear and chemical physics. This exciting development concerning ion storage rings has taken place within the last five to six years. (author)

Production of rare-earth atomic negative ion beams in a cesium-sputter-type negative ion source

International Nuclear Information System (INIS)

Davis, V.T.; Covington, A.M.; Duvvuri, S.S.; Kraus, R.G.; Emmons, E.D.; Kvale, T.J.; Thompson, J.S.

2007-01-01

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps

Environmental sensing with optical fiber sensors processed with focused ion beam and atomic layer deposition

Science.gov (United States)

Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

2015-03-01

We report an optical fiber chemical sensor based on a focused ion beam processed optical fiber. The demonstrated sensor is based on a cavity formed onto a standard 1550 nm single-mode fiber by either chemical etching, focused ion beam milling (FIB) or femtosecond laser ablation, on which side channels are drilled by either ion beam milling or femtosecond laser irradiation. The encapsulation of the cavity is achieved by optimized fusion splicing onto a standard single or multimode fiber. The empty cavity can be used as semi-curved Fabry-Pérot resonator for gas or liquid sensing. Increased reflectivity of the formed cavity mirrors can be achieved with atomic layer deposition (ALD) of alternating metal oxides. For chemical selective optical sensors, we demonstrate the same FIB-formed cavity concept, but filled with different materials, such as polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA) which show selective swelling when immersed in different solvents. Finally, a reducing agent sensor based on a FIB formed cavity partially sealed by fusion splicing and coated with a thin ZnO layer by ALD is presented and the results discussed. Sensor interrogation is achieved with spectral or multi-channel intensity measurements.

Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

International Nuclear Information System (INIS)

Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

2013-01-01

Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

A novel usage of hydrogen treatment to improve the indium incorporation and internal quantum efficiency of green InGaN/GaN multiple quantum wells simultaneously

International Nuclear Information System (INIS)

Ren, Peng; Zhang, Ning; Xue, Bin; Liu, Zhe; Wang, Junxi; Li, Jinmin

2016-01-01

The challenge for improving the internal quantum efficiency (IQE) of InGaN-based light emitting diodes (LED) in the green light range is referred to as the ‘green gap’. However the IQE of InGaN-based LEDs often drops when the emission peak wavelength is adjusted through reducing the growth temperature. Although hydrogen (H 2 ) can improve surface morphology, it reduces the indium incorporation significantly. Here, a novel usage of H 2 treatment on the GaN barrier before the InGaN quantum well is demonstrated to enhance indium incorporation efficiency and improve the IQE simultaneously for the first time. The mechanism behind it is systematically investigated and explained in detail. The possible reason for this phenomenon is the strain relieving function by the undulant GaN barrier surface after H 2 treatment. Test measurements show that applying 0.2 min H 2 treatment on the barrier would reduce defects and enhance indium incorporation, which would improve the localization effect and finally lead to a higher IQE. Although further increasing the treatment time to 0.4 min incorporates more indium atoms, the IQE decreases at the expense of more defects and a larger polarization field than the 0.2 min sample. (paper)

Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

Directory of Open Access Journals (Sweden)

Malinovskaya Tatyana

2017-01-01

Full Text Available The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

Atom capture and loss in ion molecule collisions

International Nuclear Information System (INIS)

Breinig, M.; Lasley, S.E.; Gaither, C.C. III.

1985-01-01

Progress is reported in measuring the energy and angular distribution of protons emerging with velocity close to the beam velocity from the target region when Ar + beams collide with a CH 4 target and ArH + beams collide with a He target at asymptotically high speeds. The protons result from the transfer of a target constituent to the projectile (atom capture) or from the dissociation of the projectile molecule in the collision (atom loss). For atom capture processes the Thomas peak is clearly observed. 10 refs., 3 figs