A review of the world market of indium (Economy of indium)

International Nuclear Information System (INIS)

Naumov, A.V.

2005-01-01

A review of the current state of the world and Russian markets of indium and indium-containing products was made based on the publications of the last years. Main fields of indium application are given, in particular, its using for neutron absorbing regulating rods in nuclear reactors. The second γ-radiation resulted from neutron absorption allows using indium as a neutron detector. Indium market stabilization is expected due to supply from China and South Korea [ru

Mass measurements of neutron-rich indium isotopes toward the N =82 shell closure

Science.gov (United States)

Babcock, C.; Klawitter, R.; Leistenschneider, E.; Lascar, D.; Barquest, B. R.; Finlay, A.; Foster, M.; Gallant, A. T.; Hunt, P.; Kootte, B.; Lan, Y.; Paul, S. F.; Phan, M. L.; Reiter, M. P.; Schultz, B.; Short, D.; Andreoiu, C.; Brodeur, M.; Dillmann, I.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.; Dilling, J.

2018-02-01

Precise mass measurements of the neutron-rich In-130125 isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q =13 + thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. In this paper, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z =50 ). In addition, the energies of the indium isomers are presented. The (8-) level in 128In is found to be 78 keV lower than previously thought and the (21 /2- ) isomer in 127In is shown to be lower than the literature value by more than 150 keV.

Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

International Nuclear Information System (INIS)

Koo, Su-Jin; Ju, Chang-Sik

2013-01-01

Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination

Plastic deformation of indium nanostructures

International Nuclear Information System (INIS)

Lee, Gyuhyon; Kim, Ju-Young; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

2011-01-01

Highlights: → Indium nanopillars display two different deformation mechanisms. → ∼80% exhibited low flow stresses near that of bulk indium. → Low strength nanopillars have strain rate sensitivity similar to bulk indium. → ∼20% of compressed indium nanopillars deformed at nearly theoretical strengths. → Low-strength samples do not exhibit strength size effects. - Abstract: Mechanical properties and morphology of cylindrical indium nanopillars, fabricated by electron beam lithography and electroplating, are characterized in uniaxial compression. Time-dependent deformation and influence of size on nanoscale indium mechanical properties were investigated. The results show two fundamentally different deformation mechanisms which govern plasticity in these indium nanostructures. We observed that the majority of indium nanopillars deform at engineering stresses near the bulk values (Type I), with a small fraction sustaining flow stresses approaching the theoretical limit for indium (Type II). The results also show the strain rate sensitivity and flow stresses in Type I indium nanopillars are similar to bulk indium with no apparent size effects.

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

Science.gov (United States)

Saadeddin, I.; Hilal, H. S.; Decourt, R.; Campet, G.; Pecquenard, B.

2012-07-01

Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (˜ 92% of In2O3 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In2O3 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In2O3 forming a solid-solution. A very low value of electrical resistivity is obtained for [In2O3:Sn0.10]:Zn0.10 (1.7 × 10-3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

Peculiarities of the interaction of indium-tin and indium-bismuth alloys with ammonium halides

International Nuclear Information System (INIS)

Red'kin, A.N.; Smirnov, V.A.; Sokolova, E.A.; Makovej, Z.I.; Telegin, G.F.

1990-01-01

Peculiarities of fusible metal alloys interaction with ammonium halogenides in vertical reactor are considered using indium-tin and indium-bismuth binary alloys. It is shown that at the end of the process the composition of metal and salt phases is determined by the equilibrium type and constant characteristic of the given salt-metal system. As a result the interaction of indium-tin and indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium which may be used in the processes of separation or purification. A model is suggested to calculate the final concentration of salt and metal phase components

Germanium and indium

Science.gov (United States)

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

An advanced case of indium lung disease with progressive emphysema.

Science.gov (United States)

Nakano, Makiko; Tanaka, Akiyo; Hirata, Miyuki; Kumazoe, Hiroyuki; Wakamatsu, Kentaro; Kamada, Dan; Omae, Kazuyuki

2016-09-30

To report the occurrence of an advanced case of indium lung disease with severely progressive emphysema in an indium-exposed worker. A healthy 42-year-old male smoker was employed to primarily grind indium-tin oxide (ITO) target plates, exposing him to indium for 9 years (1998-2008). In 2004, an epidemiological study was conducted on indium-exposed workers at the factory in which he worked. The subject's serum indium concentration (In-S) was 99.7 μg/l, while his serum Krebs von den Lungen-6 level was 2,350 U/ml. Pulmonary function tests showed forced vital capacity (FVC) of 4.17 l (91.5% of the JRS predicted value), forced expiratory volume in 1 s (FEV 1 ) of 3.19 l (80.8% of predicted), and an FEV 1 -to-FVC ratio of 76.5%. A high-resolution chest computed tomography (HRCT) scan showed mild interlobular septal thickening and mild emphysematous changes. In 2008, he was transferred from the ITO grinding workplace to an inspection work section, where indium concentrations in total dusts had a range of 0.001-0.002 mg/m 3 . In 2009, the subject's In-S had increased to 132.1 μg/l, and pulmonary function tests revealed obstructive changes. In addition, HRCT scan showed clear evidence of progressive lung destruction with accompanying severe centrilobular emphysema and interlobular septal thickening in both lung fields. The subject's condition gradually worsened, and in 2015, he was registered with the Japan Organ Transplant Network for lung transplantation (LTx). Heavy indium exposure is a risk factor for emphysema, which can lead to a severity level that requires LTx as the final therapeutic option.

Extraction of indium from extremely diluted solutions; Gewinnung von Indium aus extrem verduennten Loesungen

Energy Technology Data Exchange (ETDEWEB)

Vostal, Radek; Singliar, Ute; Froehlich, Peter [TU Bergakademie Freiberg (Germany). Inst. fuer Technische Chemie

2017-02-15

The demand for indium is rising with the growth of the electronics industry, where it is mainly used. Therefore, a multistage extraction process was developed to separate indium from a model solution whose composition was adequate to sphalerite ore. The initially very low concentration of indium in the solution was significantly increased by several successive extraction and reextraction steps. The process described is characterized by a low requirement for chemicals and a high purity of the obtained indium oxide.

Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

Science.gov (United States)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-11-01

O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.

2010-04-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Vacancy-indium clusters in implanted germanium

KAUST Repository

Chroneos, Alexander I.; Kube, R.; Bracht, Hartmut A.; Grimes, Robin W.; Schwingenschlö gl, Udo

2010-01-01

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Science.gov (United States)

2011-03-01

spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

Quantitative evaluation of high-energy O− ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

International Nuclear Information System (INIS)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-01-01

O − ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O − energy distribution is measured with spatial dependence. Directional high-energy O − ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O − ion is measured. From absolute evaluation of the heat flux from O − ion, O − particle flux in order of 10 18 m −2 s −1 is evaluated at a distance of 10 cm from the target. Production yield of O − ion on the ITO target by one Ar + ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10 −3 as the minimum value. (paper)

Biotin-targeted Pluronic(®) P123/F127 mixed micelles delivering niclosamide: A repositioning strategy to treat drug-resistant lung cancer cells.

Science.gov (United States)

Russo, Annapina; Pellosi, Diogo Silva; Pagliara, Valentina; Milone, Maria Rita; Pucci, Biagio; Caetano, Wilker; Hioka, Noboru; Budillon, Alfredo; Ungaro, Francesca; Russo, Giulia; Quaglia, Fabiana

2016-09-10

With the aim to develop alternative therapeutic tools for the treatment of resistant cancers, here we propose targeted Pluronic(®) P123/F127 mixed micelles (PMM) delivering niclosamide (NCL) as a repositioning strategy to treat multidrug resistant non-small lung cancer cell lines. To build multifunctional PMM for targeting and imaging, Pluronic(®) F127 was conjugated with biotin, while Pluronic(®) P123 was fluorescently tagged with rhodamine B, in both cases at one of the two hydroxyl end groups. This design intended to avoid any interference of rhodamine B on biotin exposition on PMM surface, which is a key fundamental for cell trafficking studies. Biotin-decorated PMM were internalized more efficiently than non-targeted PMM in A549 lung cancer cells, while very low internalization was found in NHI3T3 normal fibroblasts. Biotin-decorated PMM entrapped NCL with good efficiency, displayed sustained drug release in protein-rich media and improved cytotoxicity in A549 cells as compared to free NCL (Pbiotin-decorated PMM carrying NCL at low doses demonstrated a significantly higher cytotoxicity than free NCL in CPr-A549. These results point at NCL-based regimen with targeted PMM as a possible second-line chemotherapy for lung cancer showing cisplatin or multidrug resistance. Copyright © 2016 Elsevier B.V. All rights reserved.

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

International Nuclear Information System (INIS)

Chen Peng; An Zhenghua; Zhu Ming; Fu, Ricky K.Y.; Chu, Paul K.; Montgomery, Neil; Biswas, Sukanta

2004-01-01

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10 14 cm -2 ) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure

Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

International Nuclear Information System (INIS)

Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

2006-01-01

Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

Light forces on an indium atomic beam

International Nuclear Information System (INIS)

Kloeter, B.

2007-01-01

In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

Science.gov (United States)

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

New indium selenite-oxalate and indium oxalate with two- and three-dimensional structures

International Nuclear Information System (INIS)

Cao Junjun; Li Guodong; Chen Jiesheng

2009-01-01

Two new indium(III) compounds with extended structures, [In 2 (SeO 3 ) 2 (C 2 O 4 )(H 2 O) 2 ].2H 2 O (I) and [NH 3 (CH 2 ) 2 NH 3 ][In(C 2 O 4 ) 2 ] 2 .5H 2 O (II), have been prepared under mild hydrothermal conditions and structurally characterized by single-crystal X-ray diffraction, thermogravimetric analysis and infrared spectroscopy. Compound I crystallizes in the triclinic system, space group P-1, with a=5.2596(11) A, b=6.8649(14) A, c=9.3289(19) A, α=101.78(3) o , β=102.03(3) o , γ=104.52(3) o , while compound II crystallizes in the orthorhombic system, space group Fdd2, with a=15.856(3) A, b=31.183(6) A, c=8.6688(17) A. In compound I, indium-selenite chains are bridged by oxalate units to form two-dimensional (2D) In 2 (SeO 3 ) 2 C 2 O 4 layers, separated by non-coordinating water molecules. In compound II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered channels. - Graphical abstract: Two new indium(III) compounds have been hydrothermally synthesized and structurally characterized. In I, the indium-selenite chains are bridged by oxalate units to form 2D In 2 (SeO 3 ) 2 C 2 O 4 layers. In II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered ring channels

Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

International Nuclear Information System (INIS)

Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

2007-01-01

Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

Indium recovery by solvent extraction

International Nuclear Information System (INIS)

Fortes, Marilia Camargos Botelho

1999-04-01

Indium has been recovered as a byproduct from residues generated from the sulfuric acid leaching circuits in mineral plants for zinc recovery. Once its recovery comes from the slags of other metals recovery, it is necessary to separate it from the other elements which usually are present in high concentrations. Many works have been approaching this separation and indicate the solvent extraction process as the main technique used. In Brazilian case, indium recovery depends on the knowledge of this technique and its development. This paper describes the solvent extraction knowledge for the indium recovery from aqueous solutions generated in mineral plants. The results for determination of the best experimental conditions to obtain a high indium concentration solution and minimum iron poisoning by solvent extraction with di (2-ethylhexyl)-phosphoric acid (D2EHPA) solubilized in isoparafin and exxsol has been presented. (author)

Rf reactive sputtering of indium-tin-oxide films

International Nuclear Information System (INIS)

Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

1986-01-01

Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

Preparation of trialkylindium by alkylation of metallic indium

International Nuclear Information System (INIS)

Eremeev, I.V.; Danov, S.M.; Sakhipov, V.R.

1995-01-01

The investigation results on production of trialkyl indium by alkylation of metallic indium are presented. In contradistinction to the known techniques for the production of trialkyls on indium by alkylation it is suggested to separate the synthesis into two steps. At the first step indium is alkylated by alkylhalide to alkyl indium halide, and at the second alkylation is carried out using. Grignard reagent. The techniques for preparation of trimethyl- and triethylindium, developed on the bases of this scheme, are noted for good reproducibility, allow to preclude, agglomeration of indium during the synthesis, as well as to reduce the consumption coefficients, and amounts, of the introduced starting reagents, i.e. magnesium and alkylhalide. Refs. 16

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

International Nuclear Information System (INIS)

Subrahmanyam, A.; Barik, U.K.

2006-01-01

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10 0 -10 -3 Ωcm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

Energy Technology Data Exchange (ETDEWEB)

Subrahmanyam, A; Barik, U K [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

2006-07-15

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

Nanomechanical Characterization of Indium Nano/Microwires

Directory of Open Access Journals (Sweden)

N Kiran MSR

2010-01-01

Full Text Available Abstract Nanomechanical properties of indium nanowires like structures fabricated on quartz substrate by trench template technique, measured using nanoindentation. The hardness and elastic modulus of wires were measured and compared with the values of indium thin film. Displacement burst observed while indenting the nanowire. ‘Wire-only hardness’ obtained using Korsunsky model from composite hardness. Nanowires have exhibited almost same modulus as indium thin film but considerable changes were observed in hardness value.

Nuclear structure studies on indium and tin isotope chains by means of laser spectroscopy

International Nuclear Information System (INIS)

Eberz, J.

1986-11-01

In a collaboration with GSI in Darmstadt and ISOLDE in Geneva the hyperfine structure (HFS) and the isotope shift (IS) of the indium isotopes from 104 In - 127 In in their ground and isomeric states could be studied. Additionally the tin isotopes 109 Sn and 111 Sn could be measured. In tin the transition 5p 2 1 S 0 → 5p6s 3 P 1 with λ = 563 nm was studied. In indium the transition 5p 2 P 1/2 → 6s 2 S 1/2 with λ = 410 nm and 5p 2 P 3/2 → 6s 2 S 1/2 with λ = 451 nm could be measured. The magnetic dipole moments and electric quadrupole moments determined from the measurements of the HFS can be sufficiently explained in the framework of the single-particle model. From the moments the configurations and spins of the studied nuclear states can be stated. In 109 Sn the nuclear spin was determined to I = 5/2. The measurement of the IS in two lines in 108 In allowed regarding the coupling rules for nuclear moments the determination of the nuclear spin. The spin of the 40 m isomers of the 108m In can be stated to I = 2. The mean square nuclear charge radius exhibits a parabolic slope the quadratic part of which with a maximum in the shell center at N = 66 between the neutron numbers N = 50 and N = 82 can be understood as sum of contributions of a surface correlation, i.e. a quadrupole deformation as well as eventually present higher order terms or a change of the surface skin density. The deformation determinable by this description is both for tin and for indium essentially larger than the deformation from the B(E2) values of tin or from the intrinsic quadrupole moments in indium derived from the HFS. (orig./HSI) [de

A study of the kinetics and mechanisms of electrocrystallization of indium oxide on an in situ prepared metallic indium electrode

International Nuclear Information System (INIS)

Omanovic, S.; Metikos-Hukovic, M.

2004-01-01

The mechanisms and kinetics of nucleation and growth of indium oxide film on an in situ prepared metallic indium electrode was studied in a borate buffer solution of pH 10.0 using cyclic voltammetry and chroanoamperometry techniques. It was shown that the initial stage of nucleation of the oxide film includes a three-dimensional progressive nucleation process, combined with a diffusion-controlled growth of the stable indium oxide crystals. The thermodynamic data obtained indicated a strong tendency of indium to form an indium oxide film on its surface in an aqueous solution. It was found that the rate-determining step in the nucleation and growth process is the surface diffusion of electroactive species. The nucleation rate constant, and the number of nucleation active sites were calculated independently. It was shown that between 2 and 15% of sites on the indium surface act as active nucleation centers, and that each active site represents a critical nucleus

studies on the use of organic and inorganic ion exchangers for separation of indium(III) from cadmium(II) using analytical methods

International Nuclear Information System (INIS)

Mohamed, A.A.E.

2011-01-01

Organic and inorganic ion exchangers have many applications not only in the industrial, environmental and the nuclear fields but also in the separation of metal ions. This may be returned to its high measured capacity, high selectivity for some metal ions, low solubility, high chemical radiation stability and easy to use.Indium and cadmium are produced from cyclotron target where the solvent extraction represents an ordinary method for separation of indium and cadmium from its target. In the present work, More than chromatographic columns were successfully used for the separation and recovery of indium(III) and cadmium(II) ions from di-component system in aqueous solution using organic and inorganic ion exchangers. The work was carried out in three main parts;1- In the first part, the commercial resin (Dowex50w-x8) was used for the separation of indium from cadmium. The effect of pH, the weight of resin, and equilibrium time on the sorption process of both metal ions were determined. It was found that the adsorption percentage was more than 99% at pH 4 (as optimum pH value) using batch experiment. The results show that indium was first extracted while cadmium is slightly extracted at this pH value. The recovery of indium and cadmium is about 98% using hydrochloric acid as best eluent. The ion exchange/complexing properties of Dowex50w-x8 resin containing various substituted groups towards indium and cadmium cations were investigated.2- In the second part, Zn(II)polymethacrylates, and poly (acrylamide-acrylic acid), as synthetic organic ion exchangers were prepared by gamma irradiation polymerization technique of the corresponding monomer at 30 kGy. The obtained organic resins were mixed with indium ions to determine its capacity in aqueous solutions using batch experiment.

Electronic and chemical properties of indium clusters

International Nuclear Information System (INIS)

Rayane, D.; Khardi, S.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

1989-01-01

Indium clusters are produced by the inert gas condensation technique. The ionization potentials are found higher for small clusters than for the Indium atom. This is explained by the p character of the bonding as in aluminium. Doubly charge clusters are also observed and fragmentation processes discussed. Finally small Indium clusters 3< n<9 are found very reactive with hydrocarbon. (orig.)

Selective separation of indium by iminodiacetic acid chelating resin

International Nuclear Information System (INIS)

Fortes, M.C.B.; Benedetto, J.S.; Martins, A.H.

2007-01-01

- Indium can be recovered by treating residues, flue dusts, slags, and metallic intermediates in zinc smelting. This paper investigates the adsorption characteristics of indium and iron on an iminodiacetic acid chelating resin, Amberlite R IRC748 (Rohm and Haas Co.-USA). High concentrations of iron are always present in the aqueous feed solution of indium recovery. In addition, the chemical behaviour of iron in adsorptive systems is similar to that of indium. The metal concentrations in the aqueous solution were based on typical indium sulfate leach liquor obtained from zinc hydrometallurgical processing in a Brazilian plant. The ionic adsorption experiments were carried out by the continuous column method. Amberlite R IRC748 resin had a high affinity for indium under acidic conditions. Indium ions adsorbed onto the polymeric resin were eluted with a 0.5 mol/dm 3 sulphuric acid solution passed through the resin bed in the column. 99.5% pure indium sulfate aqueous solution was obtained using the iminodiacetic acid chelating resin Amberlite R IRC748. (author)

InP (Indium Phosphide): Into the future

International Nuclear Information System (INIS)

Brandhorst, H.W. Jr.

1989-03-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide

InP (Indium Phosphide): Into the future

Science.gov (United States)

Brandhorst, Henry W., Jr.

1989-01-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

International Nuclear Information System (INIS)

Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

2014-01-01

Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

Laser-spectroscopic nuclear-structure studies on radioactive silver and indium isotopes

International Nuclear Information System (INIS)

Dinger, U.

1988-05-01

Neutron-deficient silver and neutron-rich indium isotopes were studied by collinear laser spectroscopy. The neutron-deficient nuclei 101 , 103 , 104 , 105 , 105m , 106m Ag were produced as evaporation-residual nuclei in heavy-ion fusion reactions at the mass separator of the GSI in Darmstadt. The fourteen studied indium isotopes and isomers with even mass number in the range 112-126 In were produced by 600-MeV-proton induced fission of a uranium carbide target at the ISOLDE separator in Geneva. The mass-separated ion beam was subsequently deviated electrostatically, neutralized in a sodium vapor and superposed with a c w dye laser. A photon counting system detected the resonance fluorescence of the induced transitions. The hyperfine structure and the isotope shift of the 4d 9 5s 2 2 D 5/2 → 4d 10 6p 2 P 3/2 transition (λ=547.7 nm) in silver and the 5p 2 P 1/2,3/2 → 6s 2 s 1/2 transition (λ=410 respectively 451 nm) in indium were measured. While in indium for the analysis of the data earlier work could be referred to, in silver a detailed analysis of the isotope shift and hyperfine structure was performed by means of ab initio calculations and semi-empirical procedures. Thereby the configuration interactions were especially considered. The nuclear moments were discussed in the framework of existing nuclear models regarding nuclear-spectroscopic informations. (orig./HSI) [de

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

Science.gov (United States)

McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

2018-05-01

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

7 CFR 1260.127 - Marketing.

Science.gov (United States)

2010-01-01

... 7 Agriculture 10 2010-01-01 2010-01-01 false Marketing. 1260.127 Section 1260.127 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (MARKETING AGREEMENTS... Promotion and Research Order Definitions § 1260.127 Marketing. Marketing means the sale or other disposition...

Review of pulmonary toxicity of indium compounds to animals and humans

International Nuclear Information System (INIS)

Tanaka, Akiyo; Hirata, Miyuki; Kiyohara, Yutaka; Nakano, Makiko; Omae, Kazuyuki; Shiratani, Masaharu; Koga, Kazunori

2010-01-01

Due to the increased production of ITO, the potential health hazards arising from occupational exposure to this material have attracted much attention. This review consists of three parts: 1) toxic effects of indium compounds on animals, 2) toxic effects of indium compounds on humans, and 3) recommendations for preventing exposure to indium compounds in the workplace. Available data have indicated that insoluble form of indium compounds, such as ITO, indium arsenide (InAs) and indium phosphide (InP), can be toxic to animals. Furthermore, InP has demonstrated clear evidence of carcinogenic potential in long-term inhalation studies using experimental animals. As for the dangers to humans, some data are available concerning adverse health effects to workers who have been exposed to indium-containing particles. The Japan Society for Occupational Health recommended the value of 3 μg/L of indium in serum as the occupational exposure limit based on biological monitoring to preventing adverse health effects in workers resulting from occupational exposure to indium compounds. Accordingly, it is essential that much greater attention is focused on human exposure to indium compounds, and precautions against possible exposure to indium compounds are most important with regard to health management among indium-handling workers.

Indium-111 octreotide uptake in the surgical scar

Energy Technology Data Exchange (ETDEWEB)

Degirmenci, B.; Bekis, R.; Durak, H.; Derebeck, E. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Nuclear Medicine; Sen, M. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Radiation Oncology

1999-07-01

Indium-111 octreotide uptake has been reported in various somatostatin receptor positive tumors, granulomas and autoimmune diseases in which activated leucocytes may play a role, subcutaneous cavernous hemangioma and angiofibroma. We present Indium-111 octreotide uptake in a surgical abdominal scar tissue 1.5 to 6 months after surgery in a patient who had been treated for recurrent carcinoid tumor in the rectosigmoid junction. Indium-111 octreotide uptake in a surgical scar may be related to the binding to somatostatin receptors in the activated lymphocytes and fibroblasts that is previously reported. (orig.) [German] In verschiedenen Somatostatinrezeptor-positiven Tumoren, Granulomen, bei Autoimmunerkrankungen, in denen aktivierte Leukozyten eine Rolle spielen, subcutanen kavernoesen Hammangiomen und Angiofibromen wurde ueber die Anreicherung von Indium-111-Oktreotid berichtet. Wir berichten ueber die Anreicherung von Indium-111-Oktreotid in einer chirurgischen Narbe ueber dem Abdomen nach 1,5 und 6 Monaten bei einem Patienten mit einem Rezidiv-Karzinoid im rektosigmoidalen Uebergang. Die Anreicherung von Indium-111-Oktreotid in chirurgischen Narbengewebe koennte in Zusammenhang stehen mit einer Bindung an Somatostationrezeptoren in aktivierten Lymphozyten und Fibroblasten, ueber die schon berichtet wurde. (orig.)

Cross-current leaching of indium from end-of-life LCD panels

Energy Technology Data Exchange (ETDEWEB)

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy); Ubaldini, Stefano [Institute of Environmental Geology and Geoengineering IGAG, National Research Council, Via Salaria km 29300, 00015 Montelibretti, Rome (Italy); De Michelis, Ida [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Kopacek, Bernd [ISL Kopacek KG, Beckmanngasse 51, 1140 Wien (Austria); Vegliò, Francesco [Department of Industrial Engineering, Information and Economy, University of L’Aquila, Via Giovanni Gronchi 18, 67100, Zona industriale di Pile, L’Aquila (Italy); Beolchini, Francesca, E-mail: f.beolchini@univpm.it [Department of Life and Environmental Sciences, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy)

2015-08-15

Graphical abstract: Display Omitted - Highlights: • End-of-life LCD panels represent a source of indium. • Several experimental conditions for indium leaching have been assessed. • Indium is completely extracted with 2 M sulfuric acid at 80 °C for 10 min. • Cross-current leaching improves indium extraction and operating costs are lowered. • Benefits to the environment come from reduction of CO{sub 2} emissions and reagents use. - Abstract: Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2 M sulfuric acid at 80 °C for 10 min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100 ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85–90%, and with 6 steps it was about 50–55%. Indium concentration in the leachate was about 35 mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO{sub 2} (with 10 steps we assessed that the emission of about 90 kg CO{sub 2}-Eq. could be avoided) thanks to the recovery of indium

Strength function of xenon 127 and cross section of 127I(νe, e-)127Xe reaction

International Nuclear Information System (INIS)

Lyutostanskij, Yu.S.; Shul'gina, N.B.

1989-01-01

The strenght functions S β (E) and the cross section of the reaction ν e + 127 I → e - + 127 Xe were calculated in the framework of the theory of finite Fermi-systems. The results obtained are used to estimate the possibility of using an iodine-xenon detector in the experiments with solar neutrinos and reactor antineutrinos. The advantages of the iodine-xenon detector over the chlorine-argon one are shown. 13 refs.; 6 figs.; 3 tabs

Fabrication, structure and mechanical properties of indium nanopillars

Energy Technology Data Exchange (ETDEWEB)

Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

2010-01-01

Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

7 CFR 58.127 - Facilities.

Science.gov (United States)

2010-01-01

... 7 Agriculture 3 2010-01-01 2010-01-01 false Facilities. 58.127 Section 58.127 Agriculture..., Facilities, Equipment and Utensils § 58.127 Facilities. (a) Water supply. There shall be an ample supply of both hot and cold water of safe and sanitary quality, with adequate facilities for its proper...

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

Directory of Open Access Journals (Sweden)

Rajesh Biswal

2014-07-01

Full Text Available The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002 to (101 planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Indium solar neutrino experiment using superconducting grains

International Nuclear Information System (INIS)

Bellefon, A. de; Espigat, P.

1984-08-01

In this paper we would like to emphasize the revival of interest for Indium experiment in Europe. Properties of metastable superconducting indium grains are presented and our progress towards making an experiment feasible is reviewed

Cross-current leaching of indium from end-of-life LCD panels.

Science.gov (United States)

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

2015-08-01

Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels. Copyright © 2015 Elsevier Ltd. All rights reserved.

33 CFR 127.615 - Fires.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Fires. 127.615 Section 127.615... Facilities Handling Liquefied Natural Gas Firefighting § 127.615 Fires. In the marine transfer area for LNG, the operator shall ensure that there are no fires when there is LNG present. [CGD 78-038, 53 FR 3376...

Mn-implanted, polycrystalline indium tin oxide and indium oxide films

International Nuclear Information System (INIS)

Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Indium-granulocyte scanning in the painful prosthetic joint

International Nuclear Information System (INIS)

Pring, D.J.; Henderson, R.G.; Keshavarzian, A.; Rivett, A.G.; Krausz, T.; Coombs, R.R.; Lavender, J.P.

1986-01-01

The value of indium-111-labeled granulocyte scanning to determine the presence of infection was assessed in 50 prosthetic joints (41 of which were painful) in 40 patients. Granulocytes were obtained from the patients' blood and labeled in plasma with indium 111 tropolonate. Abnormal accumulation of indium 111 in the region of the prosthesis was noted. Proven infection occurred in 11 prostheses, and all of the infections were detected by indium-111-labeled granulocyte scanning. Nineteen were not infected (including nine asymptomatic controls) and only two produced false-positive scans. This represents a specificity of 89.5%, sensitivity of 100%, and overall accuracy of 93.2%. These results compare favorably with plain radiography. There was no radiologic evidence of infection in three of the infected prostheses, and 10 of the noninfected prostheses had some radiologic features that suggested sepsis. We conclude that indium-granulocyte scanning can reliably detect or exclude infection in painful prosthetic joints and should prove useful in clinical management

Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films

International Nuclear Information System (INIS)

Plagemann, A.; Ellmer, K.; Wiesemann, K.

2007-01-01

During the magnetron sputtering from an indium-tin oxide (ITO) target (76 mm diameter) we measured the ion-distribution functions (IDFs) of energetic ions (argon, indium, and oxygen ions) at the substrate surface using a combination of a quadrupole mass spectrometer and an electrostatic energy analyzer. We obtained the IDFs for argon sputtering pressures in the range from 0.08 to 2 Pa and for dc as well as rf (13.56 MHz) plasma excitation with powers from 10 to 100 W. The IDF measurements were performed both over the target center at a target-to-substrate distance of 65 mm and at different positions along the target radius in order to scan the erosion track of the target. The mean kinetic energies of argon ions calculated from the IDFs in the dc plasma decreased from about 30 to 15 eV, when the argon pressure increased from 0.08 to 2 Pa, which is caused by a decrease of the electron temperature also by a factor of 2. Indium atoms exhibit higher mean energies due to their additional energy from the sputtering process. The total metal ion flux turns out to be proportional to the discharge power and the pressure, the latter dependence being due to Penning ionization of the metal atoms (In and Sn). From the scans across the target surface the lateral distributions of metal, oxygen, and argon ions were derived. In the dc discharge the position of the erosion track is reproduced by increased ion intensities, while it is not the case for the rf excited plasma. The lateral variations of the observed species do not influence the lateral resistivity distributions of the deposited ITO films

Looking Down Under for a Circular Economy of Indium.

Science.gov (United States)

Werner, Tim T; Ciacci, Luca; Mudd, Gavin Mark; Reck, Barbara K; Northey, Stephen Alan

2018-02-20

Indium is a specialty metal crucial for modern technology, yet it is potentially critical due to its byproduct status in mining. Measures to reduce its criticality typically focus on improving its recycling efficiency at end-of-life. This study quantifies primary and secondary indium resources ("stocks") for Australia through a dynamic material-flow analysis. It is based on detailed assessments of indium mineral resources hosted in lead-zinc and copper deposits, respective mining activities from 1844 to 2013, and the trade of indium-containing products from 1988 to 2015. The results show that Australia's indium stocks are substantial, estimated at 46.2 kt in mineral resources and an additional 14.7 kt in mine wastes. Australian mineral resources alone could meet global demand (∼0.8 kt/year) for more than five decades. Discarded material from post-consumer products, instead, is negligible (43 t). This suggests that the resilience of Australia's indium supply can best be increased through efficiency gains in mining (such as introducing domestic indium refining capacity) rather than at the end of the product life. These findings likely also apply to other specialty metals, such as gallium or germanium, and other resource-dominated countries. Finally, the results illustrate that national circular economy strategies can differ substantially.

Work function of oxygen exposed lead and lead/indium alloy films

International Nuclear Information System (INIS)

Gundlach, K.H.; Hellemann, H.P.; Hoelzl, J.

1982-01-01

The effect of indium in superconducting tunnel junctions with lead/indium alloy base electrodes is investigated by measuring the vacuum work function of lead, indium, and lead/indium alloy films. It is found that the anomalous decrease of the work function of lead upon exposure to oxygen, explained by the penetration of oxygen into the inner surface of the lead film, is reversed into a slight increase in work function when some indium is added to the lead. This result indicates that the addition of indium provides a protection by suppressing the penetration of oxygen (and probably other gases) into the interior of the thin film

Secondary indium production from end-of-life liquid crystal displays

Energy Technology Data Exchange (ETDEWEB)

Amato, Alessia; Rocchetti, Laura; Fonti, Viviana; Ruello, Maria Letizia; Beolchini, Francesca [Universita Politecnica of Marche, DISVA, Via Brecce Bianche, 60131 Ancona (Italy)

2016-12-15

In 2014, the European Union identified 20 raw materials critical for economic importance and high supply risk. Indium, used in several innovative technologies, is among such critical raw materials. Generally, it is mined as a by-product of zinc from a mineral named sphalerite, with a concentration between 1 and 100 ppm. Currently, the largest producer of indium is China and about 84% of the worldwide indium consumption is used for liquid crystal display (LCD) production, in particular to form an indium-tin-oxide (ITO) film with transparent conductor properties. The fast evolution of LCD technologies caused a double effect: the growth of indium demand and an increase of waste electrical and electronic equipment (WEEE). Considering these two factors, the aim of this study is to make the end-of-life LCDs a secondary indium resource. With this purpose, an indium recovery process was developed carrying out an acidic leaching, followed by a zinc cementation. The first step allowed a complete indium extraction using 2M sulfuric acid at 80 C for 10 min. The problem of low indium concentration in the scraps (around 150 ppm) was overcome using a cross-current configuration in the leaching phase that allowed an increase of metal concentration and a decrease of reagents consumption. An indium recovery higher than 90% was obtained in the final cementation step, using 5 g/L of zinc powder at pH 3 and 55 C for 10 min. Considering its high efficiency, this process is promising in a context of circular economy, where a waste becomes a resource. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of aluminum doping on the high-temperature stability and piezoresistive response of indium tin oxide strain sensors

International Nuclear Information System (INIS)

Gregory, Otto J.; You, Tao; Crisman, Everett E.

2005-01-01

Ceramic strain sensors based on reactively sputtered indium tin oxide (ITO) thin films doped with aluminum are being considered to improve the high-temperature stability and response. Ceramic strain sensors were developed to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500 deg C. Earlier studies using electron spectroscopy for chemical analysis (ESCA) studies indicated that interfacial reactions between ITO and aluminum oxide increase the stability of ITO at elevated temperature. The resulting ESCA depth files showed the presence of two new indium-indium peaks at 448.85 and 456.40 eV, corresponding to the indium 3d5 and 3d3 binding energies. These binding energies are significantly higher than those associated with stoichiometric indium oxide. Based on these studies, a combinatorial chemistry approach was used to screen large numbers of possible concentrations to optimize the stability and performance of Al-doped ceramic strain sensors. Scanning electron microscopy was used to analyze the combinatorial libraries in which varying amounts of aluminum were incorporated into ITO films formed by cosputtering from multiple targets. Electrical stability and piezoresistive response of these films were compared to undoped ITO films over the same temperature range

Light forces on an indium atonic beam; Lichtkraefte auf einen Indiumatomstrahl

Energy Technology Data Exchange (ETDEWEB)

Kloeter, B.

2007-07-01

In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied.

7 CFR 1280.127 - United States.

Science.gov (United States)

2010-01-01

... 7 Agriculture 10 2010-01-01 2010-01-01 false United States. 1280.127 Section 1280.127 Agriculture... INFORMATION ORDER Lamb Promotion, Research, and Information Order Definitions § 1280.127 United States. United States means collectively the 50 States and the District of Columbia. ...

TEM EDS analysis of epitaxially-grown self-assembled indium islands

Directory of Open Access Journals (Sweden)

Jasmine Sears

2017-05-01

Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

33 CFR 127.705 - Security systems.

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2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Security systems. 127.705 Section 127.705 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED... Waterfront Facilities Handling Liquefied Natural Gas Security § 127.705 Security systems. The operator shall...

10 CFR 4.127 - Existing facilities.

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2010-01-01

... 10 Energy 1 2010-01-01 2010-01-01 false Existing facilities. 4.127 Section 4.127 Energy NUCLEAR... 1973, as Amended Discriminatory Practices § 4.127 Existing facilities. (a) Accessibility. A recipient... make each of its existing facilities or every part of an existing facility accessible to and usable by...

46 CFR 127.320 - Storm rails.

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2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Storm rails. 127.320 Section 127.320 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS CONSTRUCTION AND ARRANGEMENTS Rails and Guards § 127.320 Storm rails. Suitable storm rails must be installed in each passageway and at...

33 CFR 127.409 - Records.

Science.gov (United States)

2010-07-01

... Facilities Handling Liquefied Natural Gas Maintenance § 127.409 Records. (a) The operator shall keep on file... and results of the test under § 127.407. (3) A description of any corrective action taken after the...

Polarographic determination of selenium in indium

International Nuclear Information System (INIS)

Kaplan, B.Ya.; Mikheeva, V.A.; Priz, N.B.

1978-01-01

The procedure of determining nx10 -6 % Se in indium after concentrating in an elemental form on arsenic and sulphur has been developed. The selenium content is determined by inversion a.c. polarography on a sulphuric-acid background in the presence of Cu(2), potassium bichromate, and sodium pyrophosphate. 5.7x10 -6 % Se in metal indium has been determined by this procedure, the mean standard deviation being Sr=0.26

Hydrogen Production via Steam Reforming of Ethyl Alcohol over Palladium/Indium Oxide Catalyst

Directory of Open Access Journals (Sweden)

Tetsuo Umegaki

2009-01-01

Full Text Available We report the synergetic effect between palladium and indium oxide on hydrogen production in the steam reforming reaction of ethyl alcohol. The palladium/indium oxide catalyst shows higher hydrogen production rate than indium oxide and palladium. Palladium/indium oxide affords ketonization of ethyl alcohol with negligible by-product carbon monoxide, while indium oxide mainly affords dehydration of ethyl alcohol, and palladium affords decomposition of ethyl alcohol with large amount of by-product carbon monoxide. The catalytic feature of palladium/indium oxide can be ascribed to the formation of palladium-indium intermetallic component during the reaction as confirmed by X-ray diffraction and X-ray photoelectron spectroscopic measurements.

Catalytic property of an indium-deposited powder-type material containing silicon and its dependence on the dose of indium nano-particles irradiated by a pulse arc plasma process

Directory of Open Access Journals (Sweden)

Satoru Yoshimura

2017-06-01

Full Text Available Indium nano-particle irradiations onto zeolite powders were carried out using a pulse arc plasma source system. X-ray photoelectron spectroscopic and scanning electron microscopic studies of an indium irradiated zeolite sample revealed that indium nano-particles were successfully deposited on the sample. Besides, the sample was found to be capable of catalyzing an organic chemical reaction (i.e., Friedel-Crafts alkylation. Then, we examined whether or not the catalytic ability depends on the irradiated indium dose, having established the optimal indium dose for inducing the catalytic effect.

Thermal transport properties of polycrystalline tin-doped indium oxide films

International Nuclear Information System (INIS)

Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

2009-01-01

Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In 2 O 3 and 10 wt %SnO 2 ). The resistivity and carrier density of the ITO films ranged from 2.9x10 -4 to 3.2x10 -3 Ω cm and from 1.9x10 20 to 1.2x10 21 cm -3 , respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10 -6 m 2 /s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (λ ph =3.95 W/m K), which was about twice that for amorphous indium zinc oxide films

Indium sulfide precipitation from hydrochloric acid solutions of calcium and sodium chlorides

International Nuclear Information System (INIS)

Kochetkova, N.V.; Bayandina, Yu.E.; Toptygina, G.M.; Shepot'ko, A.O.

1988-01-01

The effect of precipitation duration, acid concentration, indium complexing with chloride ions on the process of indium sulfide chemical precipitation in hydrochloric acid solutions, precipitate composition and dispersity are studied. It is established that indium sulfide solubility increases in solutions with acid concentration exceeding 0.40-0.45 mol/l. Calcium and indium chloride addition to diluted hydrochloric solutions greatly increases the solubility of indium sulfide. The effect of calcium chloride on In 2 S 3 solubility is higher than that of sodium chloride

Neutral complexes of the indium dihalides

Energy Technology Data Exchange (ETDEWEB)

Sinclair, I.; Worrall, I.J. (Lancaster Univ. (UK))

1982-03-15

The neutral complexes In/sub 2/X/sub 4/.2L (X=Cl, Br, I; L 1,4-dioxan, tetrahydropyran, tetrahydrofuran, tetrahydrothiophene), In/sub 2/X/sub 4/.2L (X=Br, I; Ldimethylsulphide), In/sub 2/X/sub 4/.4L (X=Cl, Br, I; Lpiperidine, piperazine, morpholine), and In/sub 2/X/sub 4/.4L (X=Br, I; L=pyridine, dimethylsulphoxide) have been prepared. Solid state Raman spectra indicate that the compounds contain indium-indium bonds.

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

Science.gov (United States)

Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

2000-01-01

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

Synthesis and photophysical properties of indium(III) phthalocyanine derivatives

Energy Technology Data Exchange (ETDEWEB)

Özceşmeci, İbrahim, E-mail: ozcesmecii@itu.edu.tr [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gelir, Ali [Department of Physics, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey); Gül, Ahmet [Department of Chemistry, Technical University of Istanbul, Maslak 34469, Istanbul (Turkey)

2014-03-15

Three chloroindium(III) phthalocyanine derivatives bearing four aromatic (naphthalene or pyrene) or aliphatic (hexylthio) groups were prepared from corresponding phthalonitrile compounds. The indium(III) phthalocyanine derivatives were characterized with elemental analyses, mass, proton nuclear magnetic resonance ({sup 1}H NMR), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet–visible spectroscopy (UV–vis) techniques. Quantum yields and the energy transfer from the substituents to phthalocyanine core were examined. No energy transfer was observed for 5. The energy transfer efficiency from pyrene units to indium phthalocyanine core was calculated as 0.27 for 6. Quantum yields of all samples were very small due to heavy atom effect of indium atom in the core. It was also observed that upon binding of pyrene and naphthalene units to indium phthalocyanine as substituents, the quantum yields of indium phthalocyanine parts of 5 and 6 decreased. -- Highlights: • Three chloroindium(III) phthalocyanines were prepared and characterized. • Aggregation properties of these compounds were investigated. • The energy transfer efficiency was examined. • Quantum yield of these systems were calculated.

Transparent indium zinc oxide thin films used in photovoltaic cells based on polymer blends

International Nuclear Information System (INIS)

Besleaga, Cristina; Ion, L.; Ghenescu, Veta; Socol, G.; Radu, A.; Arghir, Iulia; Florica, Camelia; Antohe, S.

2012-01-01

Indium zinc oxide (IZO) thin films were obtained using pulsed laser deposition. The samples were prepared by ablation of targets with In concentrations, In/(In + Zn), of 80 at.%, at low substrate temperatures under reactive atmosphere. IZO films were used as transparent electrodes in polymer-based – poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 1:1 blend – photovoltaic cells. The action spectra measurements revealed that IZO-based photovoltaic structures have performances comparable with those using indium–tin–oxide as transparent electrode. - Highlights: ► Indium zinc oxide films were grown by pulsed laser deposition at room temperature. ► The films had large free carrier density and reasonably high mobility. ► These films fit for transparent electrodes in polymer-based photovoltaic cells.

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

2015-08-24

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

Energy Technology Data Exchange (ETDEWEB)

Subrahmanyam, A [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

2007-03-15

Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

International Nuclear Information System (INIS)

Subrahmanyam, A.; Barik, Ullash Kumar

2007-01-01

Indium (∼10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity ∼3.40x10 -8 ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity

29 CFR 102.127 - Definitions.

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2010-07-01

... 29 Labor 2 2010-07-01 2010-07-01 false Definitions. 102.127 Section 102.127 Labor Regulations Relating to Labor NATIONAL LABOR RELATIONS BOARD RULES AND REGULATIONS, SERIES 8 Ex Parte Communications... parte communication means an oral or written communication not on the public record with respect to...

33 CFR 127.1601 - Smoking.

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2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Smoking. 127.1601 Section 127.1601 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Hazardous Gas...

33 CFR 127.613 - Smoking.

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2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Smoking. 127.613 Section 127.613 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas...

40 CFR 80.127 - Sample size guidelines.

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2010-07-01

... 40 Protection of Environment 16 2010-07-01 2010-07-01 false Sample size guidelines. 80.127 Section 80.127 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) REGULATION OF FUELS AND FUEL ADDITIVES Attest Engagements § 80.127 Sample size guidelines. In performing the...

Lifetime measurements in odd-even 125La, 127La isotopes

International Nuclear Information System (INIS)

Starosta, K.; Droste, Ch.; Gundel, S.

1995-01-01

Recoil Distance Method (RDM); lifetime measurements have been carried out for the 125 La and 127 La nuclei to examine the collective structure of the decoupled band based on the unique parity πh 11/2 [550]1/2 orbital. The Stony Brook array of five BGO-suppressed Ge detectors placed at +/- 30, 90, 125 and 150 degree relative to the beam direction in conjunction with the Notre Dame/Argonne plunger was used to measure the stopped and shifted γ-ray peaks as a function of target-stopper distance. The 94 Mo( 35 Cl,2p2n) reaction at beam energy of 155 MeV was used to populate the excited states of 125 La and the 112 Cd( 19 F, 4n) reaction for the 127 La. The preliminary results of lifetime measurements are presented

Characteristics of indium-free GZO/Ag/GZO and AZO/Ag/AZO multilayer electrode grown by dual target DC sputtering at room temperature for low-cost organic photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Park, Ho-Kyun; Kim, Han-Ki [Department of Display Materials Research Center, Materials Research Center for Information Displays (MRCID), Kyung Hee University, 1 Seocheon-dong, Youngin-si, Gyeonggi-do 446-701 (Korea); Kang, Jae-Wook [Department of Material Processing, Korea Institute of Materials Science(KIMS), 66 Sangnam-dong, Changwon-si, Gyeongnam 641-831 (Korea); Na, Seok-In; Kim, Don-Yu. [Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryoung-dong, Gwangju 500-712 (Korea)

2009-11-15

We compared the electrical, optical, structural and surface properties of indium-free Ga-doped ZnO (GZO)/Ag/GZO and Al-doped ZnO (AZO)/Ag/AZO multilayer electrodes deposited by dual target direct current sputtering at room temperature for low-cost organic photovoltaics. It was shown that the electrical and optical properties of the GZO/Ag/GZO and AZO/Ag/AZO multilayer electrodes could be improved by the insertion of an Ag layer with optimized thickness between oxide layers, due to its very low resistivity and surface plasmon effect. In addition, the Auger electron spectroscopy depth profile results for the GZO/Ag/GZO and AZO/Ag/AZO multilayer electrodes showed no interfacial reaction between the Ag layer and GZO or AZO layer, due to the low preparation temperature and the stability of the Ag layer. Moreover, the bulk heterojunction organic solar cell fabricated on the multilayer electrodes exhibited higher power conversion efficiency than the organic solar cells fabricated on the single GZO or AZO layer, due to much lower sheet resistance of the multilayer electrode. This indicates that indium-free GZO/Ag/GZO and AZO/Ag/AZO multilayer electrodes are a promising low-cost and low-temperature processing electrode scheme for low-cost organic photovoltaics. (author)

Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

International Nuclear Information System (INIS)

Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

2006-01-01

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

Study on indium leaching from mechanically activated hard zinc residue

Directory of Open Access Journals (Sweden)

Yao J.H.

2011-01-01

Full Text Available In this study, changes in physicochemical properties and leachability of indium from mechanically activated hard zinc residue by planetary mill were investigated. The results showed that mechanical activation increased specific surface area, reaction activity of hard zinc residue, and decreased its particle size, which had a positive effect on indium extraction from hard zinc residue in hydrochloric acid solution. Kinetics of indium leaching from unmilled and activated hard zinc residue were also investigated, respectively. It was found that temperature had an obvious effect on indium leaching rate. Two different kinetic models corresponding to reactions which are diffusion controlled, [1-(1- x1/3]2=kt and (1-2x/3-(1-x2/3=kt were used to describe the kinetics of indium leaching from unmilled sample and activated sample, respectively. Their activation energies were determined to be 17.89 kJ/mol (umilled and 11.65 kJ/mol (activated within the temperature range of 30°C to 90°C, which is characteristic for a diffusion controlled process. The values of activation energy demonstrated that the leaching reaction of indium became less sensitive to temperature after hard zinc residue mechanically activated by planetary mill.

The Availability of Indium: The Present, Medium Term, and Long Term

Energy Technology Data Exchange (ETDEWEB)

Lokanc, Martin [Colorado School of Mines, Golden, CO (United States); Eggert, Roderick [Colorado School of Mines, Golden, CO (United States); Redlinger, Michael [Colorado School of Mines, Golden, CO (United States)

2015-10-01

Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

Labelling of bacteria with indium chelates

International Nuclear Information System (INIS)

Kleinert, P.; Pfister, W.; Endert, G.; Sproessig, M.

1985-01-01

The indium chelates were prepared by reaction of radioactive indiumchloride with 10 μg oxine, 15 μg tropolone and 3 mg acetylacetone, resp. The formed chelates have been incubated with 10 9 germs/ml for 5 minutes, with labelling outputs from 90 to 95%. Both gram-positive (Streptococcus, Staphylococcus) and gram-negative bacteria (Escherichia coli) can be labelled. The reproductive capacity of the bacteria was not impaired. The application of indium labelled bacteria allows to show the distribution of microorganisms within the living organism and to investigate problems of bacterial adherence. (author)

Indium-111 oxine labelling of white blood cells

International Nuclear Information System (INIS)

Lavender, J.P.; Silvester, D.J.; Goldman, J.; Hammersmith Hospital, London

1978-01-01

Following work done by Professor John McAfee and Mathew Thakur at the MRS Cyclotron Unit a method is available for labelling cells with indium-111 which results in a stable intracellular marker. The method uses indium-111-8 hydroxyquinoline (111In oxine) which is a lipoid soluble complex which goes across the cell membrane and results in the deposition of indium into various subcellular structures. It has been applied to various preparations of white cells, platelets and also malignant cells. Autologous granulocytes have been used to identify inflammatory lesions in 35 patients. By similar means autologous lymphocytes can also be labelled and reinfused. Lymphocytes have been shown in animals to circulate from the blood via the lymphatic system and then returning to the blood once more. The same phenomenon can be seen in man using indium labelled lymphocytes. Lymph nodes become visible at between 12 and 18 hours and recirculation of labelled cells can be shown on the blood activity curves. Certain problems arise concerning cell behaviour after labelling which appear due to irradiation of cells rather than chemical toxicity. (author)

27 CFR 28.127 - Losses.

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2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Losses. 28.127 Section 28... to a Manufacturing Bonded Warehouse § 28.127 Losses. Where there has been a loss of wine while in..., with respect to losses of wine after withdrawal without payment of tax and to claims for remission of...

7 CFR 1710.127 - Drug free workplace.

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2010-01-01

... 7 Agriculture 11 2010-01-01 2010-01-01 false Drug free workplace. 1710.127 Section 1710.127... and Basic Policies § 1710.127 Drug free workplace. Borrowers are required to comply with the Drug Free Workplace Act of 1988 (Pub. L. 100-690, title V, subtitle D) and the Act's implementing regulations (7 CFR...

Formation and growth of embedded indium nanoclusters by In2+ implantation in silica

International Nuclear Information System (INIS)

Santhana Raman, P.; Nair, K.G.M.; Kesavamoorthy, R.; Panigrahi, B.K.; Dhara, S.; Ravichandran, V.

2007-01-01

Indium nanoclusters are synthesized in an amorphous silica matrix using an ion-implantation technique. Indium ions (In 2+ ) with energy of 890 keV are implanted on silica to fluences in the range of 3 x 10 16 -3 x 10 17 cm -2 . The formation of indium nanoclusters is confirmed by optical absorption spectrometry and glancing incidence X-ray diffraction studies. A low frequency Raman scattering technique is used to study the growth of embedded indium nanoclusters in the silica matrix as a function of fluence and post-implantation annealing duration. Rutherford backscattering spectrometry studies show the surface segregation of implanted indium. Photoluminescence studies indicate the formation of a small quantity of indium oxide phase in the ion-implanted samples. (orig.)

Thermoelectric flux effect in superconducting indium

International Nuclear Information System (INIS)

Van Harlingen, D.J.

1977-01-01

In this paper we discuss a thermoelectric effect in superconductors which provides a mechanism for studying quasiparticle relaxation and scattering processes in non-equilibrium superconductors by transport measurements. We report measurements of the thermoelecric flux effect in samples consisting of indium and lead near the In transition temperature; in this temperature range, the contribution to DELTA/sub TAU/ from the Pb is insignificant and so values of OMEGA(T) are obtained for indium. The results of our experiments may be summarized as follows: (1) we have a thermally-generated flux effect in 5 superconducting In-Pb toroidal samples, (2) experimental tests suggest that the observed effect does indeed arise from the proposed thermoelectric flux effect, (3) OMEGA(T) for indium is found to diverge as (T/sub c/ - T)/sup -3/2/ more rapidly than predicted by simple theory, (4) OMEGA(T) at T/T sub c/ = .999 is nearly 10/sup 5/ larger than initially expected, (5) OMEGA (T) roughly correlates with the magnitude of the normal state thermoelectric coefficient for our samples

Investigation into cathode polarization during deposition of rhodium-nickel and rhodium-indium alloys

International Nuclear Information System (INIS)

Evdokimova, N.V.; Byacheslavov, P.M.; Lokshtanova, O.G.

1979-01-01

The results of kinetic regularities experimental investigations during electrodeposition of rhodium-nickel and rhonium-indium alloys are presented. Methods of general and partial polarization curves have been used to show the nature of polarization during the rhonium-nickel and rhodium-indium alloys deposition. It is shown that indium into the rhodium-indium alloy and nickel into the rhodium-nickel alloy deposit with great depolarization ( PHIsub(In)sup(0)=-0.33B, PHIsub(Ni)sup(0)=-0.23B). Indium and nickel in pure form do not deposit from the electrolytes of the given composition (H 2 SO 4 - 50 g/l, HNH 2 SO 3 -10 g/l). The recalculation of partial polarization curve of indium precipitation into the rhodium-indium alloy in the mixed kinetics coordinates gives a straight line with 40 mV inclination angle. This corresponds to the delayed stage of the second electron addition with the imposition of diffusion limitations

Average formation number n-barOH of colloid-type indium hydroxide

International Nuclear Information System (INIS)

Stefanowicz, T.; Szent-Kirallyine Gajda, J.

1983-01-01

Indium perchlorate in perchloric acid solution was titrated with sodium hydroxide solution to various pH values. Indium hydroxide colloid was removed by ultracentrifugation and supernatant solution was titrated with base to neutral pH. The two-stage titration data were used to calculate the formation number of indium hydroxide colloid, which was found to equal n-bar OH = 2.8. (author)

Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

International Nuclear Information System (INIS)

Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

2011-01-01

Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

Science.gov (United States)

Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

2014-08-01

Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

The indium-oxygen system, ch. 5

International Nuclear Information System (INIS)

Dillen, A.J. van

1977-01-01

This chapter is divided into three sections: 1) a survey of the literature concerning the indiumoxygen system, 2) the adsorption of oxygen at pure and partially oxidized indium surfaces in the temperature range 20-180degC, and 3) the oxidation of indium at temperatures above 180degC. The oxygen uptake is determined volumetrically and gravimetrically. The influence of the melting point is considered and the results are compared with data from the literature. The oxide layer is amorphous at lower temperatures but above 350degC, crystallisation of In 2 O 3 takes place

Gamma transitions in 127Te

International Nuclear Information System (INIS)

Batista, Wagner Fonseca; Zamboni, Cibele Bugno

2009-01-01

This study of the 127 Te β - decay was carried out by means of gamma spectroscopy measurements using high resolution Ge detector, in the region from 150 keV up to 1000 keV, aiming to get a better understanding of the 127 Te nuclear structure. Several gamma transitions were confirmed when compared with those published in the last compilation. These data resulting in lower uncertainty. (author)

Evolution of end-of-range damage and transient enhanced diffusion of indium in silicon

Science.gov (United States)

Noda, T.

2002-01-01

Correlation of evolution of end-of-range (EOR) damage and transient enhanced diffusion (TED) of indium has been studied by secondary ion mass spectrometry and transmission electron microscopy. A physically based model of diffusion and defect growth is applied to the indium diffusion system. Indium implantation with 200 keV, 1×1014/cm2 through a 10 nm screen oxide into p-type Czochralski silicon wafer was performed. During postimplantation anneal at 750 °C for times ranging from 2 to 120 min, formation of dislocation loops and indium segregation into loops were observed. Simulation results of evolution of EOR defects show that there is a period that {311} defects dissolve and release free interstitials before the Ostwald ripening step of EOR dislocation loops. Our diffusion model that contains the interaction between indium and loops shows the indium pileup to the loops. Indium segregation to loops occurs at a pure growth step of loops and continues during the Ostwald ripening step. Although dislocation loops and indium segregation in the near-surface region are easily dissolved by high temperature annealing, EOR dislocation loops in the bulk region are rigid and well grown. It is considered that indium trapped by loops with a large radius is energetically stable. It is shown that modeling of the evolution of EOR defects is important for understanding indium TED.

Purification, Characterization, and Mode of Action of Plantaricin GZ1-27, a Novel Bacteriocin against Bacillus cereus.

Science.gov (United States)

Du, Hechao; Yang, Jie; Lu, Xiaohong; Lu, Zhaoxin; Bie, Xiaomei; Zhao, Haizhen; Zhang, Chong; Lu, Fengxia

2018-05-09

Bacillus cereus is an opportunistic pathogen that causes foodborne diseases. We isolated a novel bacteriocin, designated plantaricin GZ1-27, and elucidated its mode of action against B. cereus. Plantaricin GZ1-27 was purified using ammonium sulfate precipitation, gel-filtration chromatography, and RP-HPLC. MALDI-TOF/MS revealed that its molecular mass was 975 Da, and Q-TOF-MS/MS analysis predicted the amino acid sequence as VSGPAGPPGTH. Plantaricin GZ1-27 showed thermostability and pH stability. The antibacterial mechanism was investigated using flow cytometry, confocal laser-scanning microscopy, scanning and transmission electron microscopy, and RT-PCR, which revealed that GZ1-27 increased cell membrane permeability, triggered K + leakage and pore formation, damaged cell membrane integrity, altered cell morphology and intracellular organization, and reduced the expression of genes related to cytotoxin production, peptidoglycan synthesis, and cell division. These results suggest that plantaricin GZ1-27 effectively inhibits B. cereus at both the cellular and the molecular levels and is a potential natural food preservative targeting B. cereus.

Synthesis and characterization of five-coordinated indium amidinates

Energy Technology Data Exchange (ETDEWEB)

Riahi, Yasaman

2016-07-29

The focus of this work is synthesis, characterization and exploring the reactivity of new indium amidinate compounds of the type R{sub 2}InX (R = R''NCR'NR''; R' = Ph, R'' = SiMe{sub 3}, iPr, dipp; X = Br, Cl) with the coordination number of five and R{sub 3}In (R = Me{sub 3}SiNCPhNSiMe{sub 3}) with the coordination number of six. By using amidinates as chelating ligands the electron deficiency of indium atom will be resolved. Additionally, by using different substituents the study of the different synthesized indium amidinates has become possible. The selected method for the synthesis allows the carbodiimides to react with organolithium compounds to get the corresponding lithium amidinates. Afterwards the resulting lithium amidinates take part in transmetalation reactions with InBr{sub 3} and InCl{sub 3}. The study of the reactivity of indium amidinate complexes including nucleophilic reactions as well as their reduction were also examined. Beside crystal structure analysis, nuclear magnetic resonance spectroscopy as well as elemental analysis has been applied to characterize the compounds.

7 CFR 1221.127 - Confidential treatment.

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2010-01-01

... statistical data collected there from, which statements do not identify the information furnished by any... 7 Agriculture 10 2010-01-01 2010-01-01 false Confidential treatment. 1221.127 Section 1221.127 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (MARKETING...

33 CFR 127.1209 - Respiratory protection.

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2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Respiratory protection. 127.1209... Waterfront Facilities Handling Liquefied Hazardous Gas Equipment § 127.1209 Respiratory protection. Each waterfront facility handling LHG must provide equipment for respiratory protection for each employee of the...

14 CFR 61.127 - Flight proficiency.

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2010-01-01

... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Flight proficiency. 61.127 Section 61.127 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN...; (x) High-altitude operations; and (xi) Postflight procedures. (2) For an airplane category rating...

Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

Directory of Open Access Journals (Sweden)

Hope Greg

2008-01-01

Full Text Available Abstract Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO43-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template and SDS (soft template.

Synthesis and decomposition of a novel carboxylate precursor to indium oxide

Science.gov (United States)

Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

1994-01-01

Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

Thermal expansion and volumetric changes during indium phosphide melting

International Nuclear Information System (INIS)

Glazov, V.M.; Davletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

1977-01-01

The results of the measurements of a thermal expansion were summed up at various temperatures as a diagram in coordinates (Δ 1/1) approximately F(t). It was shown that an appreciable deviation of the relationship (Δ1/1) approximately f(t) from the linear law corresponded to a temperature of 500-550 deg C. It was noted that the said deviation was related to an appreciable thermal decomposition of indium phosphide as temperature increased. The strength of the inter-atomic bond of indium phosphide was calculated. Investigated were the volumetric changes of indium phosphide on melting. The resultant data were analyzed with the aid of the Clausius-Clapeyron equation

Method for forming indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

2015-01-01

In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

Sputtering of neutral and ionic indium clusters

International Nuclear Information System (INIS)

Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

1993-01-01

Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident ∼4 keV Ar + ions. In the secondary neutral mass spectra, indium clusters as large as In 32 were observed. In the secondary ion mass spectra, indium clusters up to In 18 + were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be -5.6 and -4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions

33 CFR 127.503 - Training: General.

Science.gov (United States)

2010-07-01

... operations. (5) LNG release response procedures. (6) First aid procedures for— (i) Frostbite; (ii) Burns... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Training: General. 127.503... Waterfront Facilities Handling Liquefied Natural Gas Personnel Training § 127.503 Training: General. The...

9 CFR 3.127 - Facilities, outdoor.

Science.gov (United States)

2010-01-01

... Warmblooded Animals Other Than Dogs, Cats, Rabbits, Hamsters, Guinea Pigs, Nonhuman Primates, and Marine... 9 Animals and Animal Products 1 2010-01-01 2010-01-01 false Facilities, outdoor. 3.127 Section 3.127 Animals and Animal Products ANIMAL AND PLANT HEALTH INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE...

The effect of annealing ambient on surface segregation in indium implanted sapphire

International Nuclear Information System (INIS)

Sood, D.K.; Victoria University of Technology, Melbourne; Zhou, W.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai Institute of Metallurgy; Cao, D.X.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai, SH

1991-01-01

A systematic study of the effect of annealing ambient on both indium surface segregation and lattice damage recovery of single crystal Al 2 O 3 has been done by performing 1 hour anneals at 800 deg C for the samples identically implanted with indium ions at 100keV energy to a high dose of 5x10 16 ions/cm 2 . Following solid phase epitaxial re-crystallization of amorphous layer, the indium dopant shows rapid thermal migration. The indium redistribution consists of 2 parts: 1. appreciable broadening corresponding to diffusion within the amorphous layer, and 2. indium segregation to the free surface to form In 2 O 3 , or escape out of the surface to sublime into the surrounding ambient. Lattice damage recovery depends on indium concentration profile in amorphous layer of Al 2 O 3 which is directly influenced by the annealing ambient. It is confirmed that the presence of moisture or oxygen in annealing ambient results in In 2 O 3 formation on the surface. (author). 6 refs.; 3 figs.; 1 tab

First-principles investigation of indium diffusion in a silicon substrate

International Nuclear Information System (INIS)

Yoon, Kwan-Sun; Hwang, Chi-Ok; Yoo, Jae-Hyun; Won, Tae-Young

2006-01-01

In this paper, we report the total energy, the minimum energy path, and the migration energy of indium in a silicon substrate by using ab-initio calculations. Stable configurations during indium diffusion were obtained from the calculation of the total energy, and we estimated the minimum energy path (MEP) with the nudged elastic band (NEB) method. After finding the MEP, we found the energy barrier for the diffusion of indium to be 0.8 eV from an exact calculation of the total energies at the minimum and the transition state.

Spectrophotometric determination of indium with chromazurol S and dimethyllaurylbenzylammonium bromide

International Nuclear Information System (INIS)

Kwapulinska, G.; Buhl, F.

1988-01-01

The ternary system: indium-chromazurol S (CHAS)-dimethyllaurylbenzylammonium bromide (ST) was applied for determination of microgramme amounts of indium. The addition of ST enhances the sensitivity of the method; at λ max =625 nm the molar absorptivity of In-CHAS-ST complex equals 1.74 x 10 5 . The system obeyes the Lambert-Beer law in the range of indium concentration from 0.04 to 0.48 ppm. The maximal absorbance was obtained at pH 6. The complex is formed immediately and is stable during 2 hours. 3 figs., 10 refs. (author)

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

Science.gov (United States)

Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

2009-01-01

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Blocking of indium incorporation by antimony in III-V-Sb nanostructures

International Nuclear Information System (INIS)

Sanchez, A M; Beltran, A M; Ben, T; Molina, S I; Beanland, R; Gass, M H; De la Pena, F; Walls, M; Taboada, A G; Ripalda, J M

2010-01-01

The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

Anelasticity of polycrystalline indium

Energy Technology Data Exchange (ETDEWEB)

Sapozhnikov, K., E-mail: k.sapozhnikov@mail.ioffe.ru [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Golyandin, S. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Kustov, S. [Dept. de Fisica, Universitat de les Illes Balears, Cra Valldemossa km 7.5, E 07122 Palma de Mallorca (Spain)

2009-09-15

Mechanisms of anelasticity of polycrystalline indium have been studied over wide ranges of temperature (7-320 K) and strain amplitude (2 x 10{sup -7}-3.5 x 10{sup -4}). Measurements of the internal friction and Young's modulus have been performed by means of the piezoelectric resonant composite oscillator technique using longitudinal oscillations at frequencies of about 100 kHz. The stages of the strain amplitude dependence of the internal friction and Young's modulus defect, which can be attributed to dislocation - point defect and dislocation - dislocation interactions, have been revealed. It has been shown that thermal cycling gives rise to microplastic straining of polycrystalline indium due to the anisotropy of thermal expansion and to appearance of a 'recrystallization' internal friction maximum in the temperature spectra of amplitude-dependent anelasticity. The temperature range characterized by formation of Cottrell's atmospheres of point defects around dislocations has been determined from the acoustic data.

Photoluminescence of monovalent indium centres in phosphate glass

OpenAIRE

Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

2015-01-01

Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

33 CFR 127.109 - Lighting systems.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Lighting systems. 127.109 Section... Waterfront Facilities Handling Liquefied Natural Gas § 127.109 Lighting systems. (a) The marine transfer area for LNG must have a lighting system and separate emergency lighting. (b) All outdoor lighting must be...

Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

Directory of Open Access Journals (Sweden)

Malinovskaya Tatyana

2017-01-01

Full Text Available The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

Stability aspects of hydrogen-doped indium oxide

OpenAIRE

Jost, Gabrielle; Hamri, Alexander Nordin; Köhler, Florian; Hüpkes, Jürgen

2015-01-01

Transparent conductive oxides play an important role as contact layers in various opto-electronic devices such as solar cells or LEDs. Whilst crystalline materials e.g. zinc oxide (ZnO), tin oxide (Sn2O3) or tin doped indium oxide (ITO) have already been vastly investigated and applied [1] hydrogen doped indium oxide (In2O3:H) entered the scene a while ago as a new material with a superior trade-off between electrical and optical performance. In2O3:H is commonly deposited at room temperature...

Indium 111 leucocyte scintigraphy in abdominal sepsis

International Nuclear Information System (INIS)

Baba, A.A.; McKillop, J.H.; Gray, H.W.; Cuthbert, G.F.; Neilson, W.; Anderson, J.R.

1990-01-01

We have studied the clinical utility of indium 111 autologous leucocyte scintigraphy retrospectively in 45 patients presenting with suspected intra-abdominal sepsis. The sensitivity was 95% (21/22) and the specificity was 91% (21/23). Some 34 of the studies (17 positive and 17 negative) were considered helpful in furthering patient management (76%) and 8, unhelpful (18%). In 3, the study results were misleading and led to inappropriate treatment. Indium 111 scintigraphy, whether positive or negative, provides information in patients with suspected intra-abdominal sepsis upon which therapeutic decisions can be based. (orig.)

Electrochemical removal of indium ions from aqueous solution using iron electrodes

International Nuclear Information System (INIS)

Chou, Wei-Lung; Huang, Yen-Hsiang

2009-01-01

The removal of indium ions from aqueous solution was carried out by electrocoagulation in batch mode using an iron electrode. Various operating parameters that could potentially affect the removal efficiency were investigated, including the current density, pH variation, supporting electrolyte, initial concentration, and temperature. The optimum current density, supporting electrolyte concentration, and temperature were found to be 6.4 mA/cm 2 , 0.003N NaCl, and 298 K, respectively. When the pH values lower than 6.1, the removal efficiencies of indium ions via electrocoagulation were up to 5 times greater than those by adding sodium hydroxide. The indium ion removal efficiency decreased with an increase in the initial concentration. Results for the indium ion removal kinetics at various current densities show that the kinetic rates conformed to the pseudo-second-order kinetic model with good correlation. The experimental data were also tested against different adsorption isotherm models for describing the electrocoagulation process. The adsorption of indium ions preferably fitting the Langmuir adsorption isotherm suggests monolayer coverage of adsorbed molecules.

Electrochemical removal of indium ions from aqueous solution using iron electrodes

Energy Technology Data Exchange (ETDEWEB)

Chou, Wei-Lung, E-mail: wlchou@sunrise.hk.edu.tw [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34 Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China); Huang, Yen-Hsiang [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34 Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China)

2009-12-15

The removal of indium ions from aqueous solution was carried out by electrocoagulation in batch mode using an iron electrode. Various operating parameters that could potentially affect the removal efficiency were investigated, including the current density, pH variation, supporting electrolyte, initial concentration, and temperature. The optimum current density, supporting electrolyte concentration, and temperature were found to be 6.4 mA/cm{sup 2}, 0.003N NaCl, and 298 K, respectively. When the pH values lower than 6.1, the removal efficiencies of indium ions via electrocoagulation were up to 5 times greater than those by adding sodium hydroxide. The indium ion removal efficiency decreased with an increase in the initial concentration. Results for the indium ion removal kinetics at various current densities show that the kinetic rates conformed to the pseudo-second-order kinetic model with good correlation. The experimental data were also tested against different adsorption isotherm models for describing the electrocoagulation process. The adsorption of indium ions preferably fitting the Langmuir adsorption isotherm suggests monolayer coverage of adsorbed molecules.

Polarographic studies about indium (III) behaviour in aqueous media of sodium azide

International Nuclear Information System (INIS)

Tokoro, R.

1988-01-01

The present study shows some polarographic behavior of indium (III) in azide media that is close those observed in a thiocyanate solution. The presence of azide ligand decreases the overpotential in the discharge of indium whose catalytic character can be explained by formation of an azide bridge between electrode and indium (III) increasing the speed of electron transfer. The discharge of indium in azide media is diffusion controlled. As the azide concentration is increased the half wave potential displaces in the cathodic direction. This displacement is due to complex formation. The number of electrons, n, involved in the total process was estimates by the reversible polarographic equation to be 2,7. The potentiostatic coulometry of indium in azide/hydrazoic acid buffer showed a catalytic process where the chemistry regeneration was performed by reaction of hydrazoic acid and indium amalgam. The electrochemistry evidence was the constancy of current as the electrolysis proceeded. The chemistry aspect was the presence of ammonium cation in electrolysed solution. The catalytic process with chemistry regeneration and the formation of a bridge by azide could explain the higher value of current in azide media compared to perchlorate solution. (author) [pt

Copper-assisted shape control in colloidal synthesis of indium oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Selishcheva, Elena; Parisi, Juergen; Kolny-Olesiak, Joanna, E-mail: joanna.kolny@uni-oldenburg.de [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics (Germany)

2012-02-15

Indium oxide is an important n-type transparent semiconductor, finding application in solar cells, sensors, and optoelectronic devices. We present here a novel non-injection synthesis route for the preparation of colloidal indium oxide nanocrystals by using oleylamine (OLA) as ligand and as solvent. Indium oxide with cubic crystallographic structure is formed in a reaction between indium acetate and OLA, the latter is converted to oleylamide during the synthesis. The shape of the nanocrystals can be influenced by the addition of copper ions. When only indium (III) acetate is used as precursor flower-shaped indium oxide nanoparticles are obtained. Addition of copper salts such as copper (I) acetate, copper (II) acetate, copper (II) acetylacetonate, or copper (I) chloride, under otherwise identical reaction conditions changes the shape of nanoparticles to quasi-spherical or elongated. The anions, except for chloride, do not influence the shape of the resulting nanocrystals. This finding suggests that adsorption of copper ions on the In{sub 2}O{sub 3} surface during the nanoparticles growth is responsible for shape control, whereas changes in the reactivity of the In cations caused by the presence of different anions play a secondary role. X-ray diffraction, transmission electron microscopy, nuclear magnetic resonance, energy dispersive X-ray analysis, and UV-Vis-absorption spectroscopy are used to characterize the samples.

Copper-assisted shape control in colloidal synthesis of indium oxide nanoparticles

International Nuclear Information System (INIS)

Selishcheva, Elena; Parisi, Jürgen; Kolny-Olesiak, Joanna

2012-01-01

Indium oxide is an important n-type transparent semiconductor, finding application in solar cells, sensors, and optoelectronic devices. We present here a novel non-injection synthesis route for the preparation of colloidal indium oxide nanocrystals by using oleylamine (OLA) as ligand and as solvent. Indium oxide with cubic crystallographic structure is formed in a reaction between indium acetate and OLA, the latter is converted to oleylamide during the synthesis. The shape of the nanocrystals can be influenced by the addition of copper ions. When only indium (III) acetate is used as precursor flower-shaped indium oxide nanoparticles are obtained. Addition of copper salts such as copper (I) acetate, copper (II) acetate, copper (II) acetylacetonate, or copper (I) chloride, under otherwise identical reaction conditions changes the shape of nanoparticles to quasi-spherical or elongated. The anions, except for chloride, do not influence the shape of the resulting nanocrystals. This finding suggests that adsorption of copper ions on the In 2 O 3 surface during the nanoparticles growth is responsible for shape control, whereas changes in the reactivity of the In cations caused by the presence of different anions play a secondary role. X-ray diffraction, transmission electron microscopy, nuclear magnetic resonance, energy dispersive X-ray analysis, and UV–Vis-absorption spectroscopy are used to characterize the samples.

Selectivity enhancement of indium-doped SnO2 gas sensors

International Nuclear Information System (INIS)

Salehi, A.

2002-01-01

Indium doping was used to enhance the selectivity of SnO 2 gas sensor. Both indium-doped and undoped SnO 2 gas sensors fabricated with different deposition techniques were investigated. The changes in the sensitivity of the sensors caused by selective gases (hydrogen and wood smoke) ranging from 500 to 3000 ppm were measured at different temperatures from 50 to 300 deg. C. The sensitivity peaks of the samples exhibit different values for selective gases with a response time of approximately 0.5 s. Thermally evaporated indium-doped SnO 2 gas sensor shows a considerable increase in the sensitivity peak of 27% in response to wood smoke, whereas it shows a sensitivity peak of 7% to hydrogen. This is in contrast to the sputter deposited indium-doped SnO 2 gas sensor, which exhibits a much lower sensitivity peak of approximately 2% to hydrogen and wood smoke compared to undoped SnO 2 gas sensors fabricated by chemical vapor deposition and spray pyrolysis. Scanning electron microscopy shows that different deposition techniques result in different porosity of the films. It is observed that the thermally evaporated indium-doped SnO 2 gas sensor shows high porosity, while the sputtered sample exhibits almost no porosity

33 CFR 127.1311 - Motor vehicles.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Motor vehicles. 127.1311 Section... Waterfront Facilities Handling Liquefied Hazardous Gas Operations § 127.1311 Motor vehicles. (a) When LHG is... operator shall ensure that no person— (1) Stops or parks a motor vehicle in a space other than a designated...

Indium determination by spectral overlappings of lines in atomic absorption spectrometry

International Nuclear Information System (INIS)

Gomez, J.J.; Huicque, L. d'; Garcia Vior, L.O.

1991-01-01

A molybdenum hollow-cathode lamp filled with neon can be used to determine indium. Characteristic concentration for this element is 4.5 mg/L in the 325 nm spectral region for the Mo(I) 325.621 nm line. In addition, values of 0.4 mg/L and 0.3 mg/L are obtained with the Mo(I) 410.215 nm and Ne(I) 451.151 nm lines, respectively. These spectral overlappings allow the determination of indium in silver-cadmium-indium alloys. (Author) [es

Pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody in murine experimental viral myocarditis

International Nuclear Information System (INIS)

Yamada, T.; Matsumori, A.; Watanabe, Y.; Tamaki, N.; Yonekura, Y.; Endo, K.; Konishi, J.; Kawai, C.

1990-01-01

The pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody Fab were investigated with use of murine experimental viral myocarditis as a model. The biodistribution of indium-111-labeled antimyosin antibody Fab on days 3, 5, 7, 14, 21 and 28 after encephalomyocarditis virus inoculation demonstrated that myocardial uptake increased significantly on days 5, 7 and 14 (maximum on day 7) in infected versus uninfected mice (p less than 0.001). In vivo kinetics in infected mice on day 7 demonstrated that the heart to blood ratio reached a maximum 48 h after the intravenous administration of indium-111-labeled antimyosin Fab, which was considered to be the optimal time for scintigraphy. The scintigraphic images obtained with indium-111-labeled antimyosin Fab demonstrated positive uptake in the cardiac lesion in infected mice. The pathologic study demonstrated that myocardial uptake correlated well with pathologic grades of myocardial necrosis. High performance liquid chromatography revealed the presence of an antigen-antibody complex in the circulation of infected mice after the injection of indium-111-labeled antimyosin Fab. This antigen bound to indium-111-labeled antimyosin Fab in the circulation might be whole myosin and this complex may decrease myocardial uptake and increase liver uptake. It is concluded that indium-111-labeled antimyosin monoclonal antibody Fab accumulates selectively in damaged heart tissue in mice with acute myocarditis and that indium-111-labeled antimyosin Fab scintigraphy may be a useful method for the visualization of acute myocarditis

22 CFR 127.10 - Civil penalty.

Science.gov (United States)

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Civil penalty. 127.10 Section 127.10 Foreign... Civil penalty. (a) The Assistant Secretary of State for Political-Military Affairs is authorized to impose a civil penalty in an amount not to exceed that authorized by 22 U.S.C. 2778, 2779a and 2780 for...

Indium nanoparticles for ultraviolet surface-enhanced Raman spectroscopy

Science.gov (United States)

Das, Rupali; Soni, R. K.

2018-05-01

Ultraviolet Surface-enhanced Raman spectroscopy (UVSERS) has emerged as an efficient molecular spectroscopy technique for ultra-sensitive and ultra-low detection of analyte concentration. The generic SERS substrates based on gold and silver nanostructures have been extensively explored for high local electric field enhancement only in visible-NIR region of the electromagnetic spectrum. The template synthesis of controlled nanoscale size metallic nanostructures supporting localized surface plasmon resonance (LSPR) in the UV region have been recently explored due to their ease of synthesis and potential applications in optoelectronic, catalysis and magnetism. Indium (In0) nanoparticles exhibit active surface plasmon resonance (SPR) in ultraviolet (UV) and deep-ultaviolet (DUV) region with optimal absorption losses. This extended accessibility makes indium a promising material for UV plasmonic, chemical sensing and more recently in UV-SERS. In this work, spherical indium nanoparticles (In NPs) were synthesized by modified polyol reduction method using NaBH4 having local surface plasmon resonance near 280 nm. The as-synthesized spherical In0 nanoparticles were then coated with thin silica shells of thickness ˜ 5nm by a modified Stober method protecting the nanoparticles from agglomeration, direct contact with the probed molecules as well as prevent oxidation of the nanoparticles. Morphological evolution of In0 nanoparticles and SiO2 coating were characterized by transmission electron microscope (TEM). An enhanced near resonant shell-isolated SERS activity from thin film of tryptophan (Tryp) molecules deposited on indium coated substrates under 325nm UV excitation was observed. Finite difference time domain (FDTD) method is employed to comprehend the experimental results and simulate the electric field contours which showed amplified electromagnetic field localized around the nanostructures. The comprehensive analysis indicates that indium is a promising alternate

Targeting of indium 111-labeled bivalent hapten to human melanoma mediated by bispecific monoclonal antibody conjugates: Imaging of tumors hosted in nude mice

International Nuclear Information System (INIS)

Le Doussal, J.M.; Gruaz-Guyon, A.; Martin, M.; Gautherot, E.; Delaage, M.; Barbet, J.

1990-01-01

Antibody conjugates were prepared by coupling F(ab')2 or Fab' fragments of an antibody specific for the human high molecular weight-melanoma associated antigen to Fab' fragments of an antibody specific for indium-diethylenetriaminepentaacetate complexes. Monovalent and bivalent haptens were synthesized by reacting the dipeptide tyrosyl-lysine with diethylenetriaminepentaacetic cyclic anhydride. In vitro, the antibody conjugate mediated binding of the 111In-labeled haptens to melanoma cells. In vivo, it allowed specific localization of the haptens in A375 tumors. The bivalent hapten exhibited much higher efficiency at targeting 111In onto cells, both in vitro and in vivo. Antibody conjugate and hapten doses (2 micrograms and 1 pmol, respectively) and the delay between antibody conjugate and tracer injections (24 h) were adjusted to maximize tumor uptake (4% injected dose/g) and tumor to normal tissue contrast (greater than 3) obtained 3 h after injection of the 111In-labeled bivalent hapten. This two-step technique, when compared to direct targeting of 111In-labeled F(ab')2 fragments, provided lower localization of injected activity into the tumor (x 0.25), but higher tumor/tissue ratios, especially with respect to liver (x 7), spleen (x 8), and kidneys (x 10). In addition, high contrast images were obtained within 3 hours, instead of days. Thus, antibody conjugate-mediated targeting of small bivalent haptens, labeled with short half-life isotopes, is proposed as a general method for improving tumor radioimmunolocalization

Acid-catalyzed kinetics of indium tin oxide etching

Energy Technology Data Exchange (ETDEWEB)

Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

2014-08-28

We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

International Nuclear Information System (INIS)

Kim, Sukwon; Kim, Tae Geun

2015-01-01

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

International Nuclear Information System (INIS)

Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

2013-01-01

Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

Amperometric titration of indium with edta solution in propanol

International Nuclear Information System (INIS)

Gevorgyan, A.M.; Talipov, Sh.T.; Khadeev, V.A.; Kostylev, V.S.; Khadeeva, L.A.

1980-01-01

Optimum conditions have been chosen for titration of indium with EDTA solution in anhydrous propanol and its mixtures with some aprotic solvents using amperometric and point detection. A procedure is suggested of determining indium microcontents in the presence of large amounts of other elements. The procedure is based on its extraction preseparation followed by direct titration in the extract with a standard EDTA solution [ru

Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

Energy Technology Data Exchange (ETDEWEB)

Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T., E-mail: torsten.boeck@ikz-berlin.de [Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, Berlin 12489 (Germany); Symietz, C.; Bonse, J.; Andree, S.; Krüger, J. [Bundesanstalt für Materialforschung und-prüfung (BAM), Unter den Eichen 87, Berlin 12205 (Germany); Heidmann, B.; Schmid, M. [Department of Physics, Freie Universität Berlin, Arnimalle 14, Berlin 14195 (Germany); Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Lux-Steiner, M. [Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Heterogeneous Material Systems, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany)

2016-03-14

A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

Influence of nitrogen on magnetic properties of indium oxide

Science.gov (United States)

Ashok, Vishal Dev; De, S. K.

2013-07-01

Magnetic properties of indium oxide (In2O3) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH4Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In2O3. Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH4Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH4Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation.

Influence of nitrogen on magnetic properties of indium oxide

International Nuclear Information System (INIS)

Ashok, Vishal Dev; De, S K

2013-01-01

Magnetic properties of indium oxide (In 2 O 3 ) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH 4 Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In 2 O 3 . Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH 4 Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH 4 Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation. (paper)

Research on the effect of alkali roasting of copper dross on leaching rate of indium

Science.gov (United States)

Dafang, Liu; Fan, Xingxiang; Shi, Yifeng; Yang, Kunbin

2017-11-01

The byproduct copper dross produced during refining crude lead was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectrometer (XRF), which showed that copper dross mainly contained lead, copper, zinc, arsenic, antimony, bismuth, sulfur and a small amount of indium and silver etc. The mineralogical phase change of oxidation roasting of copper dross by adding sodium hydroxide was analyzed with the help of XRD and SEM. The effects of water leaching, ratio of sodium hydroxide, roasting time, and roasting temperature on leaching rate of indium were investigated mainly. The experimental results showed that phase of lead metal and sulfides of lead, copper and zinc disappeared after oxidation roasting of copper dross by adding sodium hydroxide, new phase of oxides of lead, copper, zinc and sodium salt of arsenic and antimony appeared. Water leaching could remove arsenic, and acid leaching residue obtained was then leached with acid. The leaching rate of indium was higher 6.98% compared with alkali roasting of copper dross-acid leaching. It showed that removing arsenic by water leaching and acid leaching could increase the leaching rate of indium and be beneficial to reducing subsequent acid consumption of extracting indium by acid leaching. The roasting temperature had a significant effect on the leaching rate of indium, and leaching rate of indium increased with the rise of roasting temperature. When roasting temperature ranged from 450°C to 600°C, leaching rate of indium increased significantly with the rise of roasting temperature. When roasting temperature rose from 450°C to 600°C, leaching rate of indium increased by 60.29%. The amount of sodium hydroxide had an significant effect on the leaching rate of indium, and the leaching of indium increased with the increase of the amount of sodium hydroxide, and the leaching rate of indium was obviously higher than that of copper dross blank roasting and acid leaching.

Aluminium, gallium, indium and thallium

International Nuclear Information System (INIS)

Brown, Paul L.; Ekberg, Christian

2016-01-01

Aluminium can exist in a number of oxyhydroxide mineral phases including corundum, diaspore, boehmite and gibbsite. The stability constants at zero ionic strength reported for Al(OH) 3 (aq) vary linearly with respect to the inverse of absolute temperature. A full suite of thermodynamic parameters is available for all aluminium phases and hydrolysis species. Gallium hydrolyses to a greater extent than aluminium, with the onset of hydrolysis reactions occurring just above a pHof 1. In fact, even though aluminium has the smallest ionic radius of this series of metals, it has the weakest hydrolysis species and oxide/hydroxide phases.This is due to the presence of stabilising d-orbitals in the heavier metals, gallium, indium and thallium(III). There are few available data for the stability constants of indium(III) hydrolysis species. Of those that are available, the range in the proposed stability constants covers many orders of magnitude.

45 CFR 96.127 - Requirements regarding tuberculosis.

Science.gov (United States)

2010-10-01

... 45 Public Welfare 1 2010-10-01 2010-10-01 false Requirements regarding tuberculosis. 96.127... Substance Abuse Prevention and Treatment Block Grant § 96.127 Requirements regarding tuberculosis. (a... Department of Health/Tuberculosis Control Officer, which address how the program— (1) Will, directly or...

Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

International Nuclear Information System (INIS)

Boyadzhiev, S; Dobrikov, G; Rassovska, M

2008-01-01

Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

13 CFR 127.400 - What is an eligibility examination?

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2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What is an eligibility examination? 127.400 Section 127.400 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Eligibility Examinations § 127.400 What is an eligibility...

Effect of ion indium implantation on InP photoluminescence spectra

International Nuclear Information System (INIS)

Pyshnaya, N.B.; Radautsan, S.I.; Tiginyanu, I.M.; Ursaki, V.V.

1988-01-01

Photoluminescence spectra of indium phosphide single crystals implanted by indium after annealing under the protective Al 2 O 3 film in a nitrogen flow are investigated. As a result of implantation and annealing in photoluminescence spectra of crystals there appeared a new band with the maximum at 1.305 eV (T=6 K) which is connected with the free electron transition at the level of the antistructure defect of In p - lying by 0.115 eV above the valent zone ceiling. With large doses of the implanted indium in the photoluminescence spectrum a long-wave band with the maximum at 0.98-0.99 eV is also observed caused, apparently, by the strong lattice disorder

Short-range order in amorphous thin films of indium selenides

International Nuclear Information System (INIS)

Zakharov, V.P.; Poltavtsev, Yu.G.; Sheremet, G.P.

1982-01-01

A structure of the short-range order and a character of interatomic interactions in indium selenides Insub(1-x)Sesub(x) with 0.333 <= x <= 0.75, obtained in the form of amorphous films 0.05-0.80 μm thick are studied using electron diffraction method. It is found out that mostly tetrahedrical coordination of nearest neighbours in the vicinity of indium atoms is characteristic for studied amorphous films, and coordination of selenium atoms is different. Amorphous film with x=0.75 posesses a considereably microheterogeneous structure of the short-range order, which is characterized by the presence of microunclusions of amorphous selenium and atoms of indium, octohedrically coordinated by selenium atoms

Hydrothermal synthesis of two layered indium oxalates with 12-membered apertures

International Nuclear Information System (INIS)

Chen Zhenxia; Zhou Yaming; Weng Linhong; Zhang Haoyu; Zhao Dongyuan

2003-01-01

Two layered indium oxalates, In(C 2 O 4 ) 2.5 (C 3 N 2 H 12 )(H 2 O) 3 , I, and In(C 2 O 4 ) 1.5 (H 2 O) 3 , II, have been hydrothermally synthesized. In I, the linkage between indium and oxalate units gives rise to a sheet with a rectangular 12-membered aperture (six indium atoms and six oxalate units). Indium atom of II has an unusual pentagonal bipyramidal coordination arrangement. The connectivity between indium and oxalate units forms a neutral puckered layer with 12- (along a-axis) and eight-membered (along b-axis) apertures. Crystal data for these two indium oxalates are as follows: I, triclinic, space group: P-1 (No. 2), a=8.725(3) A, b=9.170(3) A, c=9.901(3) A, α=98.101(4) deg. , β=97.068(4) deg. , γ=102.403(4) deg. , V=756.3(4) A 3 , Z=2, M=463.0(5), ρ calc =2.042 g/cm 3 , R 1 =0.0377, wR 2 =0.0834. II, monoclinic, space group: P2 1 /c (No. 14), a=10.203(5) A, b=6.638(1) A, c=11.152(7) A, β=95.649(4) deg. , V=751.7(4)A 3 , Z=4, M=300.9(0), ρ calc =2.659 g/cm 3 , R 1 =0.0229, wR 2 =0.0488. TG analyses indicate the water molecules of I can be removed at 150 deg. C. The dehydrated product retains structural integrity

Highly conducting and transparent sprayed indium tin oxide

Energy Technology Data Exchange (ETDEWEB)

Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

1998-03-01

Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

The precipitation of indium at elevated pH in a stream influenced by acid mine drainage

Science.gov (United States)

White, Sarah Jane O.; Hussain, Fatima A.; Hemond, Harold F.; Sacco, Sarah A.; Shine, James P.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.

2017-01-01

Indium is an increasingly important metal in semiconductors and electronics and has uses in important energy technologies such as photovoltaic cells and light-emitting diodes (LEDs). One significant flux of indium to the environment is from lead, zinc, copper, and tin mining and smelting, but little is known about its aqueous behavior after it is mobilized. In this study, we use Mineral Creek, a headwater stream in southwestern Colorado severely affected by heavy metal contamination as a result of acid mine drainage, as a natural laboratory to study the aqueous behavior of indium. At the existing pH of ~ 3, indium concentrations are 6–29 μg/L (10,000 × those found in natural rivers), and are completely filterable through a 0.45 μm filter. During a pH modification experiment, the pH of the system was raised to > 8, and > 99% of the indium became associated with the suspended solid phase (i.e. does not pass through a 0.45 μm filter). To determine the mechanism of removal of indium from the filterable and likely primarily dissolved phase, we conducted laboratory experiments to determine an upper bound for a sorption constant to iron oxides, and used this, along with other published thermodynamic constants, to model the partitioning of indium in Mineral Creek. Modeling results suggest that the removal of indium from the filterable phase is consistent with precipitation of indium hydroxide from a dissolved phase. This work demonstrates that nonferrous mining processes can be a significant source of indium to the environment, and provides critical information about the aqueous behavior of indium.

33 CFR 127.107 - Electrical power systems.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Electrical power systems. 127.107... Waterfront Facilities Handling Liquefied Natural Gas § 127.107 Electrical power systems. (a) The electrical power system must have a power source and a separate emergency power source, so that failure of one...

Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide.

Science.gov (United States)

Fahrenkrug, Eli; Rafson, Jessica; Lancaster, Mitchell; Maldonado, Stephen

2017-09-19

The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved Sb 2 O 3 , an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.

Properties of polycrystalline indium oxide in open air and in vacuum

International Nuclear Information System (INIS)

Solov'eva, A.E.; Zhdanov, V.A.; Markov, V.L.; Shvangiradze, R.R.

1982-01-01

Properties of polycrystalline indium oxide according to annealing temperature in open air and in vacuum are investigated. It is established that the indium oxide begins to change its chemical composition during the annealing in the open air from 1200 deg C, and in the vacuum - form 800 deg C. During the annealing of the samples in ths open air in the temperature range of 1200-1450 deg C the lattice of the indium oxide loses probably, only oxygen; this process is accompanied by change of the samples color, electrophysical properties, lattice parameter density. Cation sublattice is disturbed in the vacuum beginning from 900 deg C, which is accompanied by destruction of the color centers. X-ray density and the activation energy of the reduction accounting the formation of the color centers are calculated on the base of the X-ray data and the deviation from stoichiometry of the indium oxide depending on the annealing temperature in the open air

Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy

International Nuclear Information System (INIS)

Dogra, R; Shrestha, S K; Byrne, A P; Ridgway, M C; Edge, A V J; Vianden, R; Penner, J; Timmers, H

2005-01-01

The crystal lattice of bulk grains and state-of-the-art films of indium nitride was investigated at the atomic scale with perturbed angular correlation spectroscopy using the 111 In/Cd radioisotope probe. The probe was introduced during sample synthesis, by diffusion and by ion implantation. The mean quadrupole interaction frequency ν Q = 28 MHz was observed at the indium probe site in all types of indium nitride samples with broad frequency distributions. The observed small, but non-zero, asymmetry parameter indicates broken symmetry around the probe atoms. Results have been compared with theoretical calculations based on the point charge model. The consistency of the experimental results and their independence of the preparation technique suggest that the origin of the broad frequency distribution is inherent to indium nitride, indicating a high degree of disorder at the atomic scale. Due to the low dissociation temperature of indium nitride, furnace and rapid thermal annealing at atmospheric pressure reduce the lattice disorder only marginally

State of rare earth impurities in gallium and indium antimonides

International Nuclear Information System (INIS)

Evgen'ev, S.B.; Kuz'micheva, G.M.

1990-01-01

State of rare earth impurities in indium and gallium antimonides was studied. Results of measuring density and lattice parameter of samples in GaSb-rare earth and InSb-rare earth systems are presented. It is shown that during rare earth dissolution in indium and gallium antimonides rare earth atoms occupy interstitial positions or, at least, are displaced from lattice points

14 CFR 151.127 - Accounting and audit.

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2010-01-01

... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Accounting and audit. 151.127 Section 151...) AIRPORTS FEDERAL AID TO AIRPORTS Rules and Procedures for Advance Planning and Engineering Proposals § 151.127 Accounting and audit. The requirements of § 151.55 relating to accounting and audit of project...

47 CFR 76.127 - Satellite sports blackout.

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2010-10-01

... 47 Telecommunication 4 2010-10-01 2010-10-01 false Satellite sports blackout. 76.127 Section 76... Sports Blackout § 76.127 Satellite sports blackout. (a) Upon the request of the holder of the broadcast rights to a sports event, or its agent, no satellite carrier shall retransmit to subscribers within the...

17 CFR 1.27 - Record of investments.

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2010-04-01

... 17 Commodity and Securities Exchanges 1 2010-04-01 2010-04-01 false Record of investments. 1.27... UNDER THE COMMODITY EXCHANGE ACT Customers' Money, Securities, and Property § 1.27 Record of investments... record showing the following: (1) The date on which such investments were made; (2) The name of the...

Determination of gold and indium in sea water by neutron activation analysis

International Nuclear Information System (INIS)

Tateno, Yukio; Ohta, Naoichi

1979-01-01

A combination of electrodeposition on graphite with neutron activation analysis was used for the determination of gold and indium in sea water. At a potential of -0.70 V vs. the silver-silver chloride electrode, gold and indium were electrolyzed on to a graphite electrode (1.1 cm phi x 0.2 cm) from 100 ml of 0.5 M sodium chloride. Recovery yield of gold was constant at pH from 1 to 3 and was independent of the initial concentration of gold, (0.01 -- 1) ppb. For a 72-h electrolysis at pH 2 the recovery yield of gold was 92%, while that of indium was 32%. The graphite electrode was exposed to a thermal neutron flux of 5.1 x 10 11 or 1.5 x 10 12 n cm -2 s -1 : 5 min exposure for indium and 6 to 12 h for gold. After appropriate decay periods the activities of 198 Au and sup(116m)In were measured for 2000 s and 300 s, respectively, with a 4000-channel pulse-height analyser and a Ge(Li) detector. The total amount of gold in 1 l of a sea water sample (Tokyo Bay) was (0.023 +- 0.001)μg, in which nonelectrolyzable gold was estimated to be 0.005 μg. Indium concentration in the sample was too low to be determined by the present method. Detection limit for indium was 1 ppb. (author)

19 CFR 127.25 - Advertisement of sale.

Science.gov (United States)

2010-04-01

... § 127.25 Advertisement of sale. (a) Regular advertising. Except as prescribed in § 127.28 (c), (d), and... given for three successive weeks, immediately preceding the sale, in one newspaper of extensive circulation published at the port where the sale is to be held. The newspaper is to be selected by the port...

Plasma Treatment to Remove Carbon from Indium UV Filters

Science.gov (United States)

Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

2012-01-01

The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

Neutron Activation Resonance Integrals of 74Se, 78Se, 80Se, 81Br, 127I, 130Te, 138Ba, 140Ce, and 142Ce

International Nuclear Information System (INIS)

Ricabarra, M. D.; Turjanskl, R.; Ricabarra, G. H.; Bigham, C.B.

1968-01-01

A lithium-drift germanium γ-ray spectrometer has been used to make accurate intercomparisons of the ratio of resonance-integral to thermal-activation cross section by measuring cadmium ratios or relative activation rates in two different neutron spectra. The standard, gold, or secondary standard, indium, was mixed uniformly in the samples and the activities resolved with the spectrometer. Expressed as Westcott S 0 values, the results relative to S 0 = 17.7 for gold were as follows: 74 Se = 10.3 +± 0.1, 78 Se = 12.3 ± 0.3, 80 Sc = 2.65 ± 0.02, 81 Br = 24.3 ± 0.5, 127 I = 27.8 ± 0.5, 130 Te = 2.10 ± 0.07, 138 Ba = 0.649 ± 0.004, 140 Ce = 0.476 ± 0.003, 142 Ce = 0.865 ± 0.005. (author)

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2015-09-30

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

Different magnetic properties of rhombohedral and cubic Ni2+ doped indium oxide nanomaterials

Directory of Open Access Journals (Sweden)

Qingbo Sun

2011-12-01

Full Text Available Transition metal ions doped indium oxide nanomaterials were potentially used as a kind of diluted magnetic semiconductors in transparent spintronic devices. In this paper, the influences of Ni2+ doped contents and rhombohedral or cubic crystalline structures of indium oxide on magnetic properties were investigated. We found that the magnetic properties of Ni2+ doped indium oxide could be transferred from room temperature ferromagnetisms to paramagnetic properties with increments of doped contents. Moreover, the different crystalline structures of indium oxide also greatly affected the room temperature ferromagnetisms due to different lattice constants and almost had no effects on their paramagnetic properties. In addition, both the ferromagnetic and paramagnetic properties were demonstrated to be intrinsic and not caused by impurities.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

Science.gov (United States)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Indium oxide octahedrons based on sol–gel process enhance room temperature gas sensing performance

Energy Technology Data Exchange (ETDEWEB)

Mu, Xiaohui [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Chen, Changlong, E-mail: chem.chencl@hotmail.com [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Han, Liuyuan [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China); Shao, Baiqi [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Wei, Yuling [Instrumental Analysis Center, Qilu University of Technology, Jinan 250353, Shandong (China); Liu, Qinglong; Zhu, Peihua [Key Laboratory of Chemical Sensing & Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, Shandong (China)

2015-07-15

Highlights: • In{sub 2}O{sub 3} octahedron films are prepared based on sol–gel technique for the first time. • The preparation possesses merits of low temperature, catalyst-free and large production. • It was found that the spin-coating process in film fabrication was key to achieve the octahedrons. • The In{sub 2}O{sub 3} octahedrons could significantly enhance room temperature NO{sub 2} gas sensing performance. - Abstract: Indium oxide octahedrons were prepared on glass substrates through a mild route based on sol–gel technique. The preparation possesses characteristics including low temperature, catalyst-free and large production, which is much distinguished from the chemical-vapor-deposition based methods that usually applied to prepare indium oxide octahedrons. Detailed characterization revealed that the indium oxide octahedrons were single crystalline, with {1 1 1} crystal facets exposed. It was found that the spin-coating technique was key for achieving the indium oxide crystals with octahedron morphology. The probable formation mechanism of the indium oxide octahedrons was proposed based on the experiment results. Room temperature NO{sub 2} gas sensing measurements exhibited that the indium oxide octahedrons could significantly enhance the sensing performance in comparison with the plate-like indium oxide particles that prepared from the dip-coated gel films, which was attributed to the abundant sharp edges and tips as well as the special {1 1 1} crystal facets exposed that the former possessed. Such a simple wet-chemical based method to prepare indium oxide octahedrons with large-scale production is promising to provide the advanced materials that can be applied in wide fields like gas sensing, solar energy conversion, field emission, and so on.

Indium oxide octahedrons based on sol–gel process enhance room temperature gas sensing performance

International Nuclear Information System (INIS)

Mu, Xiaohui; Chen, Changlong; Han, Liuyuan; Shao, Baiqi; Wei, Yuling; Liu, Qinglong; Zhu, Peihua

2015-01-01

Highlights: • In 2 O 3 octahedron films are prepared based on sol–gel technique for the first time. • The preparation possesses merits of low temperature, catalyst-free and large production. • It was found that the spin-coating process in film fabrication was key to achieve the octahedrons. • The In 2 O 3 octahedrons could significantly enhance room temperature NO 2 gas sensing performance. - Abstract: Indium oxide octahedrons were prepared on glass substrates through a mild route based on sol–gel technique. The preparation possesses characteristics including low temperature, catalyst-free and large production, which is much distinguished from the chemical-vapor-deposition based methods that usually applied to prepare indium oxide octahedrons. Detailed characterization revealed that the indium oxide octahedrons were single crystalline, with {1 1 1} crystal facets exposed. It was found that the spin-coating technique was key for achieving the indium oxide crystals with octahedron morphology. The probable formation mechanism of the indium oxide octahedrons was proposed based on the experiment results. Room temperature NO 2 gas sensing measurements exhibited that the indium oxide octahedrons could significantly enhance the sensing performance in comparison with the plate-like indium oxide particles that prepared from the dip-coated gel films, which was attributed to the abundant sharp edges and tips as well as the special {1 1 1} crystal facets exposed that the former possessed. Such a simple wet-chemical based method to prepare indium oxide octahedrons with large-scale production is promising to provide the advanced materials that can be applied in wide fields like gas sensing, solar energy conversion, field emission, and so on

Thermopower of dilute alloys of indium

International Nuclear Information System (INIS)

Dudenhoeffer, A.W.

1974-01-01

An experimental investigation of a new theory of electron-diffusion thermopower is discussed. A figure of merit for this ''Nielsen--Taylor'' theory in various metals is established, and it indicates that the effect should be largest in lead, indium, thallium, and aluminum, in that order. Previous investigations have been carried out for lead and aluminum. The thermopower of indium (or any metal) changes when impurity scattering centers are introduced into it. This change in the thermopower as a function of temperature is analyzed in terms of the Nielsen--Taylor theory and in terms of the competing process known as ''phonon drag.'' Definite conclusions as to the validity of the new theory are hampered by the complex nature of this phonon drag, but the experimental data is consistent with the Nielsen--Taylor theory. (Diss. Abstr. Int., B)

Discovery of the calcium, indium, tin, and platinum isotopes

International Nuclear Information System (INIS)

Amos, S.; Gross, J.L.; Thoennessen, M.

2011-01-01

Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. → Summary of author, journal, year, place and country of discovery for each isotope. → Brief description of discovery history of each isotope.

New beam for the CERN fixed target heavy ion programme

CERN Document Server

Hill, C E; O'Neill, M

2002-01-01

The physicists of the CERN heavy ion community (SPS fixed target physics) have requested lighter ions than the traditional lead ions, to scale their results and to check their theories. Studies have been carried out to investigate the behaviour of the ECR4 for the production of an indium beam. Stability problems and the low melting point of indium required some modifications to the oven power control system which will also benefit normal lead ion production. Present results of the source behaviour and the ion beam characteristics will be presented.

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Science.gov (United States)

Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

2018-01-01

The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

Development of an Indium Bump Bond Process for Silicon Pixel Detectors at PSI

CERN Document Server

Brönnimann, C; Gobrecht, J; Heising, S; Horisberger, M; Horisberger, R P; Kästli, H C; Lehmann, J; Rohe, T; Streuli, S; Broennimann, Ch.

2006-01-01

The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflown afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a seco...

Effect of indium addition in U-Zr metallic fuel on lanthanide migration

Energy Technology Data Exchange (ETDEWEB)

Kim, Yeon Soo, E-mail: yskim@anl.gov [Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439 (United States); Wiencek, T.; O' Hare, E.; Fortner, J.; Wright, A. [Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439 (United States); Cheon, J.S.; Lee, B.O. [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of)

2017-02-15

Advanced fast reactor concepts to achieve ultra-high burnup (∼50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys was performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.

Effect of indium addition in U-Zr metallic fuel on lanthanide migration

Energy Technology Data Exchange (ETDEWEB)

Kim, Yeon Soo; Wiencek, T.; O' Hare, E.; Fortner, J.; Wright, A.; Cheon, J. S.; Lee, B. O.

2017-02-01

Advanced fast reactor concepts to achieve ultra-high burnup (~50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys was performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.

Ultralow energy calibration of LUX detector using Xe 127 electron capture

Science.gov (United States)

Akerib, D. S.; Alsum, S.; Araújo, H. M.; Bai, X.; Bailey, A. J.; Balajthy, J.; Beltrame, P.; Bernard, E. P.; Bernstein, A.; Biesiadzinski, T. P.; Boulton, E. M.; Brás, P.; Byram, D.; Cahn, S. B.; Carmona-Benitez, M. C.; Chan, C.; Currie, A.; Cutter, J. E.; Davison, T. J. R.; Dobi, A.; Druszkiewicz, E.; Edwards, B. N.; Fallon, S. R.; Fan, A.; Fiorucci, S.; Gaitskell, R. J.; Genovesi, J.; Ghag, C.; Gilchriese, M. G. D.; Hall, C. R.; Hanhardt, M.; Haselschwardt, S. J.; Hertel, S. A.; Hogan, D. P.; Horn, M.; Huang, D. Q.; Ignarra, C. M.; Jacobsen, R. G.; Ji, W.; Kamdin, K.; Kazkaz, K.; Khaitan, D.; Knoche, R.; Larsen, N. A.; Lenardo, B. G.; Lesko, K. T.; Lindote, A.; Lopes, M. I.; Manalaysay, A.; Mannino, R. L.; Marzioni, M. F.; McKinsey, D. N.; Mei, D.-M.; Mock, J.; Moongweluwan, M.; Morad, J. A.; Murphy, A. St. J.; Nehrkorn, C.; Nelson, H. N.; Neves, F.; O'Sullivan, K.; Oliver-Mallory, K. C.; Palladino, K. J.; Pease, E. K.; Rhyne, C.; Shaw, S.; Shutt, T. A.; Silva, C.; Solmaz, M.; Solovov, V. N.; Sorensen, P.; Sumner, T. J.; Szydagis, M.; Taylor, D. J.; Taylor, W. C.; Tennyson, B. P.; Terman, P. A.; Tiedt, D. R.; To, W. H.; Tripathi, M.; Tvrznikova, L.; Uvarov, S.; Velan, V.; Verbus, J. R.; Webb, R. C.; White, J. T.; Whitis, T. J.; Witherell, M. S.; Wolfs, F. L. H.; Xu, J.; Yazdani, K.; Young, S. K.; Zhang, C.

2017-12-01

We report an absolute calibration of the ionization yields (Qy ) and fluctuations for electronic recoil events in liquid xenon at discrete energies between 186 eV and 33.2 keV. The average electric field applied across the liquid xenon target is 180 V /cm . The data are obtained using low energy Xe 127 electron capture decay events from the 95.0-day first run from LUX (WS2013) in search of weakly interacting massive particles. The sequence of gamma-ray and x-ray cascades associated with I 127 deexcitations produces clearly identified two-vertex events in the LUX detector. We observe the K-(binding energy, 33.2 keV), L-(5.2 keV), M-(1.1 keV), and N-(186 eV) shell cascade events and verify that the relative ratio of observed events for each shell agrees with calculations. The N-shell cascade analysis includes single extracted electron (SE) events and represents the lowest-energy electronic recoil in situ measurements that have been explored in liquid xenon.

Synthesis, characterization and theranostic evaluation of Indium-111 labeled multifunctional superparamagnetic iron oxide nanoparticles

International Nuclear Information System (INIS)

Zolata, Hamidreza; Abbasi Davani, Fereydoun; Afarideh, Hossein

2015-01-01

Indium-111 labeled, Trastuzumab-Doxorubicin Conjugated, and APTES-PEG coated magnetic nanoparticles were designed for tumor targeting, drug delivery, controlled drug release, and dual-modal tumor imaging. Superparamagnetic iron oxide nanoparticles (SPIONs) were synthesized by thermal decomposition method to obtain narrow size particles. To increase SPIONs circulation time in blood and decrease its cytotoxicity in healthy tissues, SPIONs surface was modified with 3-Aminopropyltriethoxy Silane (APTES) and then were functionalized with N-Hydroxysuccinimide (NHS) ester of Polyethylene Glycol Maleimide (NHS-PEG-Mal) to conjugate with thiolated 3,6,9,15-tetraazabicyclo[9.3.1]pentadeca-1(15),11,13-triene-3,6, 9,-triacetic acid (PCTA) bifunctional chelator (BFC) and Trastuzumab antibody. In order to tumor SPECT/MR imaging, SPIONs were labeled with Indium-111 (T 1/2 = 2.80d). NHS ester of monoethyl malonate (MEM-NHS) was used for conjugation of Doxorubicin (DOX) chemotherapeutic agent onto SPIONs surface. Mono-Ethyl Malonate allows DOX molecules to be attached to SPIONs via pH-sensitive hydrazone bonds which lead to controlled drug release in tumor region. Active and passive tumor targeting were achieved through incorporated anti-HER2 (Trastuzumab) antibody and EPR effect of solid tumors for nanoparticles respectively. In addition to in vitro assessments of modified SPIONs in SKBR3 cell lines, their theranostic effects were evaluated in HER2 + breast tumor bearing BALB/c mice via biodistribution study, dual-modal molecular imaging and tumor diameter measurements

Polyol-mediated synthesis of copper indium sulphide by solvothermal process

International Nuclear Information System (INIS)

Gorai, S.; Chaudhuri, S.

2005-01-01

A simple polyol-mediated solvothermal method has been proposed to synthesize copper indium sulphide. XRD studies reveal that the products are well crystallized. SEM indicates rod-like (with different aspect ratio) and star-shaped flake-like morphology of the products. The products are also characterized by optical studies and compositional analysis (XRF). XRF results show the formation of stoichiometric and non-stoichiometric copper indium sulphides depending on the reaction conditions

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

International Nuclear Information System (INIS)

Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

2015-01-01

Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

2015-01-28

Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

Enhanced photocatalytic activity of titania with unique surface indium and boron species

Science.gov (United States)

Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

2013-05-01

Indium and boron co-doped TiO2 photocatalysts were prepared by a sol-gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV-vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO2 in interstitial mode, while indium is present as unique chemical species of O-In-Clx (x = 1 or 2) on the surface. Compared with pure TiO2, the narrowness of band gap of TiO2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O-In-Clx (x = 1 or 2) and B2O3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO2 showed the much higher photocatalytic activities than pure TiO2, boron doped TiO2 (TiO2-B) and indium doped TiO2 (TiO2-In) under visible and UV light irradiation.

13 CFR 127.402 - How will SBA conduct an examination?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false How will SBA conduct an examination? 127.402 Section 127.402 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Eligibility Examinations § 127.402 How will SBA...

Calibration of differential scanning calorimeters: A comparison between indium and diphenylacetic acid

International Nuclear Information System (INIS)

Charsley, E.L.; Laye, P.G.; Markham, H.M.; Le Goff, T.

2010-01-01

The close proximity in melting temperature of the LGC Limited DSC standards indium and diphenylacetic acid, has enabled a direct assessment to be made of any differences resulting from the use of a metal or an organic compound in the calibration of DSC equipment. Following calibration with indium, the equilibrium fusion temperatures for diphenylacetic acid, were determined by both the stepwise heating and extrapolation to zero heating rate methods. The results were in excellent agreement with the certificate values and established that indium may be used as a calibrant when making accurate DSC measurements on organic materials in the same temperature range and that it has the advantage that it is non-volatile and can be used a number of times without significant change. Similar agreement was obtained in the measurement of the enthalpy of fusion, although the larger heat capacity change on fusion of diphenylacetic acid resulted in a greater uncertainty than with indium.

Interaction of cadmium and indium nitrate mixture with sodium tungstate in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Belousova, E E; Krivobok, V I; Gruba, A I [Donetskij Gosudarstvennyj Univ. (Ukrainian SSR)

1982-01-01

The interaction of the mixture of cadmium and indium nitrates with sodium tungstate in aqueous solution is studied using the methods of ''residual concentrations'', pH potentiometry and conductometry. Independent of the ratio of components in the initial solution a mixture of coprecipitated normal tungstates of cadmium and indium is formed in the system. Heat treatment of the precipitates at 800 deg C for 50 hrs with subsequent hardening results in the formation of solid solutions on the basis of normal cadmium and indium tungstates.

Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

International Nuclear Information System (INIS)

Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

1994-01-01

Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

Deposition of indium tin oxide thin films by cathodic arc ion plating

International Nuclear Information System (INIS)

Yang, M.-H.; Wen, J.-C.; Chen, K.-L.; Chen, S.-Y.; Leu, M.-S.

2005-01-01

Indium tin oxide (ITO) thin films have been deposited by cathodic arc ion plating (CAIP) using sintered oxide target as the source material. In an oxygen atmosphere of 200 deg. C, ITO films with a lowest resistivity of 2.2x10 -4 Ω-cm were obtained at a deposition rate higher than 450 nm/min. The carrier mobility of ITO shows a maximum at some medium pressures. Although morphologically ITO films with a very fine nanometer-sized structure were observed to possess the lowest resistivity, more detailed analyses based on X-ray diffraction are attempted to gain more insight into the factors that govern electron mobility in this investigation

Electronic and chemical properties of barium and indium clusters

International Nuclear Information System (INIS)

Onwuagba, B.N.

1992-11-01

The ground state electronic and chemical properties of divalent barium and trivalent indium are investigated in a self-consistent manner using the spin-polarized local density approximation in the framework of Density Functional Theory. A jellium model is adopted in the spirit of Gunnarsson and Lundqvist exchange and correlation energies and the calculated properties primarily associated with the s-p orbitals in barium and p orbitals in indium provide deepened insight towards the understanding of the mechanisms to the magic numbers in both clusters. (author). 21 refs, 5 figs

Activation analysis of indium used as tracer in hydrogeology

International Nuclear Information System (INIS)

Stanescu, S.P.; Farcasiu, O.M.; Gaspar, E.; Spiridon, S.; Nazarov, V.M.; Frontasieva, M.V.

1985-01-01

About 2500 samples of 18 hydro-karstic structures from Romania have been analyzed. The water flow rates were in the range of 0.05 to 2.7 m 3 /s and transit time values were from 30 h to 200 days. The quantity of indium used for a labelling was a calculated function of the emergency flow rate and the estimated transit time and varied from 1 to 100 g. The results prove that the activation analysis of indium in water samples combined with preconcentration by coprecipitation is an useful method in hydrogeological studies

25 CFR 170.127 - What terms apply to access roads?

Science.gov (United States)

2010-04-01

... 25 Indians 1 2010-04-01 2010-04-01 false What terms apply to access roads? 170.127 Section 170.127 Indians BUREAU OF INDIAN AFFAIRS, DEPARTMENT OF THE INTERIOR LAND AND WATER INDIAN RESERVATION ROADS PROGRAM Indian Reservation Roads Program Policy and Eligibility Irr Housing Access Roads § 170.127 What...

Dopamine-mediated oxidation of methionine 127 in α-synuclein causes cytotoxicity and oligomerization of α-synuclein.

Directory of Open Access Journals (Sweden)

Kazuhiro Nakaso

Full Text Available Parkinson's disease (PD is a neurodegenerative disorder characterized by the selective loss of dopaminergic neurons and the presence of Lewy bodies. Many recent studies focused on the interaction between α-synuclein (α-syn and dopamine in the pathogenesis of PD, and fluorescent anisotropy suggested that the C-terminal region of α-syn may be a target for modification by dopamine. However, it is not well understood why PD-related pathogenesis occurs selectively in dopaminergic neurons. We investigated the interaction between dopamine and α-syn with regard to cytotoxicity. A soluble oligomer was formed by co-incubating α-syn and dopamine in vitro. To clarify the effect of dopamine on α-syn in cells, we generated PC12 cells expressing human α-syn, as well as the α-syn mutants, M116A, Y125D, M127A, S129A, and M116A/M127A, in a tetracycline-inducible manner (PC12-TetOFF-α-syn. Overexpression of wildtype α-syn in catecholaminergic PC12 cells decreased cell viability in long-term cultures, while a competitive inhibitor of tyrosine hydroxylase blocked this vulnerability, suggesting that α-syn-related cytotoxicity is associated with dopamine metabolism. The vulnerabilities of all mutant cell lines were lower than that of wildtype α-syn-expressing cells. Moreover, α-syn containing dopamine-mediated oxidized methionine (Met(O was detected in PC12-TetOFF-α-syn. Met(O was lower in methionine mutant cells, especially in the M127A or M116A/M127A mutants, but also in the Y125D and S129A mutants. Co-incubation of dopamine and the 125YEMPS129 peptide enhanced the production of H2O2, which may oxidize methionine residues and convert them to Met(O. Y125- or S129-lacking peptides did not enhance the dopamine-related production of H2O2. Our results suggest that M127 is the major target for oxidative modification by dopamine, and that Y125 and S129 may act as enhancers of this modification. These results may describe a mechanism of dopaminergic neuron

Effect of Indium Doping on the Sensitivity of SnO2 Gas Sensor

International Nuclear Information System (INIS)

Suharni; Sayono

2009-01-01

The dependence of sensitivity f SnO 2 gas sensors on indium concentration has been studied. Undoped and indium-doped SnO 2 gas sensors have been prepared by DC sputtering technique with following parameters i.e : electrode voltage of 3 kV, current 20 mA, vacuum pressure 1.8 × 10 -1 torr, deposition time 60 minutes and temperature of 200℃. The effect of weight variations of indium in order of 0.0370; 0.0485 and 0.0702 grams into SnO 2 thin film gas sensor for optimum result were investigated. The measurement of resistance, sensitivity and response time for various temperature for detecting of carbon monoxide (CO), Ammonia (NH 3 ) and acetone (CH 3 COCH 3 ) gas for indium doped has been done. From the analysis result shows that for indium doped 0.0702 g on the SnO 2 the resistance can be decreased from 832.0 kΩ to 3.9 kΩ and the operating temperature from 200℃ to 90℃ and improving the sensitivity from 15.92% to 40.09% and a response time from 30 seconds to 10 seconds for CO. (author)

Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

2008-01-01

Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

Evaluation of indium-111 colloid for radionuclide imaging of the abdominal lymph nodes

International Nuclear Information System (INIS)

Vieras, F.; Hamilton, R.F.; Grissom, M.P.; Kiepffer, R.F.; Vandergrift, J.F.

1981-01-01

The experimental evaluation of indium-111 colloid for imaging the para-aortic lymph nodes in animals is described and preliminary results obtained in human subjects. Serial lymphatic scintigraphy performed in beagle dogs following bilateral pedal subcutaneous injections of indium-111 colloid revealed good para-aortic lymph node visualization. A normal migration pattern of indium-111 colloid was also observed in human subjects following subcutaneous injection in the feet; there was clear visualization of the ileo-inguinal and para-aortic lymph nodes. Organ distribution studies for indium-111 colloid were performed in rats following unilateral pedal subcutaneous injection in rats; these results were used for calculating radiation dose estimates to various organs. The study demonstrates the feasibility of using 111 In-colloid clinically for abdominal lymphatic scintiography for the use of sup(99m)Tc-labelled colloids results in lower radiation doses. (U.K.)

Gas chromatography of indium in macroscopic and carrier-free amounts using quartz and gold as stationary phases

Energy Technology Data Exchange (ETDEWEB)

Serov, A.; Eichler, R.; Tuerler, A.; Wittwer, D.; Gaeggeler, H.W. [Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. fuer Radiochemie und Umweltchemie; Bern Univ. (Switzerland). Dept. fuer Chemie und Biochemie; Dressler, R.; Piguet, D.; Voegele, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland). Lab. fuer Radiochemie und Umweltchemie

2011-07-01

The chemical investigation of E113 is likely to become soon feasible. The determination of chemical properties of carrier-free amounts of the lighter homologues of element 113, especially indium and thallium, allows designing experimental set-ups and selecting experimental conditions suitable for performing these studies. Here, we present investigations of the interaction of indium species with quartz and gold surfaces. Deposition temperatures as well as enthalpies of adsorption were determined for indium T{sub dep} = 739 {+-} 20 C (-{delta}H{sub ads}(In) = 227 {+-} 10 kJ mol{sup -1}) and for indium hydroxide T{sub dep} = 250 {+-} 20 C (-{delta}H{sub ads}(InOH)= 124 {+-}10 kJ mol{sup -1}) respectively, on quartz. In case of adsorption of indium on a gold surface only a lower limit of the deposition temperature was established T{sub dep} > 980 C (-{delta}H{sub ads}(In) {>=} 315 {+-} 10 kJ mol{sup -1}). Investigations of macroscopic amounts of indium in thermosublimation experiments at similar experimental conditions were instrumental to establish a tentative speciation of the observed indium species. (orig.)

Tin–indium/graphene with enhanced initial coulombic efficiency and rate performance for lithium ion batteries

International Nuclear Information System (INIS)

Yang, Hongxun; Li, Ling

2014-01-01

Graphical abstract: -- Highlights: • Tin–indium/graphene hybrid was firstly synthesized. • Indium in the hybrid reduces charge transfer resistance of electrode. • Graphene can accommodate the volume change of nanoparticles during cycling. • Tin–indium/graphene hybrid shows enhanced initial coulombic efficiency. • Tin–indium/graphene hybrid shows enhanced rate capability. -- Abstract: Tin is an attractive anode material replacing the current commercial graphite for the next generation lithium ion batteries because of its high theoretical storage capacity and energy density. However, poor capacity retention caused by large volume changes during cycling, and low rate capability frustrate its practical application. In this study, a new ternary composite based on tin–indium alloy (Sn–In) and graphene nanosheet (GNS) was prepared via a facile solvothermal synthesis followed by thermal treatment in hydrogen and argon at 550 °C. Characterizations show that the tin–indium nanoparticles with about 100 nm in size were wrapped between the graphene nanosheets. As an anode for lithium ion batteries, the Sn–In/GNS composite exhibits a remarkably improved electrochemical performance in terms of lithium storage capacity (865.6 mAh g −1 at 100 mA g −1 rate), initial coulombic efficiency (78.6%), cycling stability (83.9% capacity retention after 50 cycles), and rate capability (493.2 mAh g −1 at 600 mA g −1 rate after 25 cycles) compared to Sn/GNS and Sn–In electrode. This improvement is attributed to the introduction of lithium activity metal, indium, which reduces the charge transfer resistance of electrode, and the graphene nanosheet which accommodates the volume change of tin–indium nanoparticles during cycling and improves electrical conductivity of material

Template synthesis of indium nanowires using anodic aluminum oxide membranes.

Science.gov (United States)

Chen, Feng; Kitai, Adrian H

2008-09-01

Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

Enhanced photocatalytic activity of titania with unique surface indium and boron species

International Nuclear Information System (INIS)

Yu, Yanlong; Wang, Enjun; Yuan, Jixiang; Cao, Yaan

2013-01-01

Indium and boron co-doped TiO 2 photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO 2 in interstitial mode, while indium is present as unique chemical species of O–In–Cl x (x = 1 or 2) on the surface. Compared with pure TiO 2 , the narrowness of band gap of TiO 2 doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl x (x = 1 or 2) and B 2 O 3 species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO 2 showed the much higher photocatalytic activities than pure TiO 2 , boron doped TiO 2 (TiO 2 –B) and indium doped TiO 2 (TiO 2 –In) under visible and UV light irradiation.

Indium oxide inverse opal films synthesized by structure replication method

Science.gov (United States)

Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

2016-04-01

We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

Annealing of defects in indium antimonide after ion bombardment

International Nuclear Information System (INIS)

Bogatyrev, V.A.; Kachurin, G.A.

1977-01-01

Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

The steady-state and time-resolved photophysical properties of a dimeric indium phthalocyanine complex

International Nuclear Information System (INIS)

Chen Yu; Araki, Yasuyuki; Dini, Danilo; Liu Ying; Ito, Osamu; Fujitsuka, Mamoru

2006-01-01

The steady-state and time-resolved photophysical properties and some molecular orbital calculation results of a dimeric indium phthalocyanine complex with an indium-indium bond, i.e., [tBu 4 PcIn] 2 .2tmed, have been described. The results regarding triplet excited state lifetimes can be ascribed to strong intramolecular interactions existing only in the excited state of this dimer because no significant difference in the absorption spectra of the tBu 4 PcInCl monomer and the [tBu 4 PcIn] 2 .2tmed dimer is observed, suggesting that no ground-state interaction can be assessed. The deactivation processes of the excited singlet state of [tBu 4 PcIn] 2 .2tmed are apparently faster than that of μ-oxo-bridged PcIn dimer [tBu 4 PcIn] 2 O. Molecular orbital calculation on the PcIn dimer shows no node between two indium atoms was found in the HOMO - 2 of the PcIn-InPc dimer, suggesting that bonding electrons distribute between two indium atoms

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

Science.gov (United States)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

A Solid-Contact Indium(III) Sensor based on a Thiosulfinate Ionophore Derived from Omeprazole

Energy Technology Data Exchange (ETDEWEB)

Abbas, Mohammad Nooredeen; Hend Samy Amer [National Research Centre, Cairo (Egypt)

2013-04-15

A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from 3 Χ 10{sup -7} to 1 Χ 10{sup -2} M and a lower detection limit (LDL) of 1 Χ 10{sup -7} M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.

49 CFR 572.127 - Test conditions and instrumentation.

Science.gov (United States)

2010-10-01

...-year-old Child Test Dummy, Beta Version § 572.127 Test conditions and instrumentation. (a) The test... ends of ribs #1 and #6 and at the spine box at the levels of #1 and #6 ribs as shown in 127-0000 sheet...) The optional lumbar spine force-moment transducer shall have the dimensions, response characteristics...

On the impact of indium distribution on the electronic properties in InGaN nanodisks

KAUST Repository

Benaissa, M.

2015-03-09

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

On the impact of indium distribution on the electronic properties in InGaN nanodisks

KAUST Repository

Benaissa, M.; Sigle, W.; Ng, Tien Khee; El Bouayadi, R.; van Aken, P. A.; Jahangir, S.; Bhattacharya, P.; Ooi, Boon S.

2015-01-01

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

Recalibration of indium foil for personnel screening in criticality accidents.

Science.gov (United States)

Takada, C; Tsujimura, N; Mikami, S

2011-03-01

At the Nuclear Fuel Cycle Engineering Laboratories of the Japan Atomic Energy Agency (JAEA), small pieces of indium foil incorporated into personal dosemeters have been used for personnel screening in criticality accidents. Irradiation tests of the badges were performed using the SILENE reactor to verify the calibration of the indium activation that had been made in the 1980s and to recalibrate them for simulated criticalities that would be the most likely to occur in the solution process line. In addition, Monte Carlo calculations of the indium activation using the badge model were also made to complement the spectral dependence. The results lead to a screening level of 15 kcpm being determined that corresponds to a total dose of 0.25 Gy, which is also applicable in posterior-anterior exposure. The recalibration based on the latest study will provide a sounder basis for the screening procedure in the event of a criticality accident.

Synthesis of indium nanoclusters and formation of thin film contacts on plastic substrates for organic and flexible electronics applications

International Nuclear Information System (INIS)

Shi, Frank F; Bulkowski, Michal; Hsieh, K C

2007-01-01

In this work, we described the processes of synthesizing free-standing indium nanoclusters using inverse micelles and microemulsions as well as synthesizing organic-encapsulated indium nanoclusters using alkanethiols as the organic encapsulants. The synthesized organic-encapsulated indium nanoclusters have demonstrated the feasibilities to be used as plastic compatible soft metal contacts for emerging organic devices. The homogeneously distributed indium nanoclusters with sizes of 10-30 nm have been fabricated on a few different plastic substrates. By changing the alkanethiol carbon chain length and the sizes of the indium nanoclusters, the annealing temperature required to form low-resistance indium thin film conductors has been reduced to 80-100 deg. C, which is acceptable for a variety of organic thin films

Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials

Directory of Open Access Journals (Sweden)

Anna M. K. Gustafsson

2015-01-01

Full Text Available Recycling of the semiconductor material copper indium gallium diselenide (CIGS is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be −0.5 V and −0.9 V (versus the Ag/AgCl reference electrode, respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective.

Enhanced photocatalytic activity of titania with unique surface indium and boron species

Energy Technology Data Exchange (ETDEWEB)

Yu, Yanlong; Wang, Enjun; Yuan, Jixiang [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China); Cao, Yaan, E-mail: caoyaan@yahoo.com [MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457 (China)

2013-05-15

Indium and boron co-doped TiO{sub 2} photocatalysts were prepared by a sol–gel method. The structure and properties of photocatalysts were characterized by XRD, BET, XPS, UV–vis DRS and PL techniques. It is found that boron is mainly doped into the lattice of TiO{sub 2} in interstitial mode, while indium is present as unique chemical species of O–In–Cl{sub x} (x = 1 or 2) on the surface. Compared with pure TiO{sub 2}, the narrowness of band gap of TiO{sub 2} doped with indium and boron is due to the mixed valence band formed by B2p of interstitial doped B ions hybridized with lattice O2p. And the surface state energy levels of O–In–Cl{sub x} (x = 1 or 2) and B{sub 2}O{sub 3} species were located at about 0.4 and 0.3 eV below the conduction band respectively, which could lead to significant absorption in the visible-light region and facilitated the effectually separation of photogenerated carriers. Therefore, indium and boron co-doped TiO{sub 2} showed the much higher photocatalytic activities than pure TiO{sub 2}, boron doped TiO{sub 2} (TiO{sub 2}–B) and indium doped TiO{sub 2} (TiO{sub 2}–In) under visible and UV light irradiation.

Diagnosis of infection by preoperative scintigraphy with indium-labeled white blood cells

International Nuclear Information System (INIS)

Wukich, D.K.; Abreu, S.H.; Callaghan, J.J.; Van Nostrand, D.; Savory, C.G.; Eggli, D.F.; Garcia, J.E.; Berrey, B.H.

1987-01-01

Scintigraphy with indium-labeled white blood cells has been reported to be sensitive and specific in the diagnosis of low-grade sepsis of the musculoskeletal system. We reviewed the records of fifty patients who had suspected osteomyelitis or suspected infection about a total joint prosthesis and who underwent scintigraphy with technetium-99m methylene diphosphonate and scintigraphy with indium-111 oxine-labeled white blood cells before an open surgical procedure. Any patient who received preoperative antibiotics was not included in the study. For all of the patients, gram-stain examination of smears, evaluation of a culture of material from the operative site, and histological examination were done. The patients were divided into two groups. Group I was composed of twenty-four patients, each of whom had a prosthesis in place and complained of pain. Group II was composed of twenty-six patients for whom a diagnosis of chronic osteomyelitis had to be considered. With the indium scans alone, there was only one false-negative result (in Group II), but there were eighteen false-positive results (eight patients in Group II and ten patients in Group I). Although scintigraphy with indium-labeled white blood cells is quite sensitive, it is not specific in detecting chronic osteomyelitis; a negative scan should be considered highly suggestive that osteomyelitis is not present. Specificity can be increased by interpreting the indium scan in conjunction with the technetium scan

40 CFR 1.27 - Offices of the Associate Administrators.

Science.gov (United States)

2010-07-01

... cooperation with foreign organizations. The Office coordinates Agency international contacts and commitments... establishes Agency policy, and approves annual plans and modifications for travel abroad and attendance at.... 1.27 Section 1.27 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GENERAL STATEMENT OF...

Polycrystalline Mn-alloyed indium tin oxide films

International Nuclear Information System (INIS)

Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

2008-01-01

Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

Interaction of indium trichloride with calcium carbonate in aqueous solutions

International Nuclear Information System (INIS)

Kochetkova, N.V.; Toptygina, G.M.; Soklakova, O.V.; Evdokimov, V.I.

1991-01-01

Interaction of indium trichloride with calcium carbonate in aqueous solutions was studied, using methods of potentiometry, isothermal solubility and physicochemical computer simulating. The Gibb's energy value for crystal indium trihydroxide formation was calculated on the basis of experimental data on In(OH) 3 solubility. The value obtained was used for estimating equilibrium composition of InCl 3 -HCl-CaCO 3 -CO 2 -H 2 O system at a temperature of 25 deg C and carbon dioxide partial pressure of 0.05 to 1 at

14 CFR 125.127 - Location of fuel tanks.

Science.gov (United States)

2010-01-01

... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Location of fuel tanks. 125.127 Section 125... Requirements § 125.127 Location of fuel tanks. (a) Fuel tanks must be located in accordance with § 125.153. (b... compartment may be used as the wall of an integral tank. (c) Fuel tanks must be isolated from personnel...

Spectroscopic investigation of indium halides as substitudes of mercury in low pressure discharges for lighting applications

Energy Technology Data Exchange (ETDEWEB)

Briefi, Stefan

2012-05-22

Low pressure discharges with indium halides as radiator are discussed as substitutes for hazardous mercury in conventional fluorescent lamps. In this work, the applicability of InBr and InCl in a low pressure discharge light source is investigated. The aim is to identify and understand the physical processes which determine the discharge characteristics and the efficiency of the generated near-UV emission of the indium halide molecule and of the indium atom which is created due to dissociation processes in the plasma. As discharge vessels sealed cylindrical quartz glass tubes which contain a defined amount of indium halide and a rare gas are used. Preliminary investigations showed that for a controlled variation of the indium halide density a well-defined cold spot setup is mandatory. This was realized in the utilized experimental setup. The use of metal halides raises the issue, that power coupling by internal electrodes is not possible as the electrodes would quickly be eroded by the halides. The comparison of inductive and capacitive RF-coupling with external electrodes revealed that inductively coupled discharges provide higher light output and much better long term stability. Therefore, all investigations are carried out using inductive RF-coupling. The diagnostic methods optical emission and white light absorption spectroscopy are applied. As the effects of absorption-signal saturation and reabsorption of emitted radiation within the plasma volume could lead to an underestimation of the determined population densities by orders of magnitude, these effects are considered in the data evaluation. In order to determine the electron temperature and the electron density from spectroscopic measurements, an extended corona model as population model of the indium atom has been set up. A simulation of the molecular emission spectra has been implemented to investigate the rovibrational population processes of the indium halide molecules. The impact of the cold spot

Kinetic study of indium-111 labelled platelets in idiopathic thrombocytopenic purpura

International Nuclear Information System (INIS)

Reiffers, J.; Vuillemin, L.; Broustet, A.; Ducassou, D.

1982-01-01

Labelling platelets with 111 Indium-oxine has advantages over the conventional 51 chromium method: labelling is more efficient and the radiations emitted almost exclusively consist of gamma-rays. Owing to these advantages, autologous platelets can be used for kinetic studies in patients with idiopathic thrombocytopenic purpura, even when thrombocytopenia is severe. 111 Indium labelling also provides accurate information on the sites of platelet destruction, which may help to predict the patient's response to splenectomy [fr

Unusual tensile behaviour of fibre-reinforced indium matrix composite and its in-situ TEM straining observation

International Nuclear Information System (INIS)

Luo, Xin; Peng, Jianchao; Zandén, Carl; Yang, Yanping; Mu, Wei; Edwards, Michael; Ye, Lilei; Liu, Johan

2016-01-01

Indium-based thermal interface materials are superior in thermal management applications of electronic packaging compared to their polymer-based counterparts. However, pure indium has rather low tensile strength resulting in poor reliability. To enhance the mechanical properties of such a material, a new composite consisting of electrospun randomly oriented continuous polyimide fibres and indium was fabricated. The composite has been characterised by tensile tests and in-situ transmission electron microscopy straining observations. It is shown that the composite's ultimate tensile strength at 20 °C is five times higher than that of pure indium, and the strength of the composite exceeds the summation of strengths of the individual components. Furthermore, contrary to most metallic matrix materials, the ultimate tensile strength of the composite decreases with the increased strain rate in a certain range. The chemical composition and tensile fracture of the novel composite have been analysed comprehensively by means of scanning transmission electron microscopy and scanning electron microscopy. A strengthening mechanism based on mutually reinforcing structures formed by the indium and surrounding fibres is also presented, underlining the effect of compressing at the fibre/indium interfaces by dislocation pileups and slip pinning.

Synthesis of indium-111 mesoprotoporphyrin IX

International Nuclear Information System (INIS)

Lee, K.M.; Marshall, A.G.

1981-01-01

Indium-111 mesoprotoporphyrin IX has been prepared by refluxing suitable proportions of InCl 3 , sodium acetate, and mesoprotoporphyrin IX in glacial acetic acid. The labeled metalloporphyrin is sufficiently water-soluble for use as a scanning agent, and can also be incorporated into heme apoproteins for perturbed gamma-gamma angular correlation measurements. (author)

Analysis and calibration of transient enhanced diffusion for an indium impurity in a nanoscale semiconductor device

International Nuclear Information System (INIS)

Lee, Jun-Ha; Lee, Hoong-Joo

2005-01-01

We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO 2 interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-μm device characteristics, such as V th and I dsat , for which the differences between simulation and experiment less than 5 %.

Solvent extraction studies of indium-mixed chelates with β-diketones in benzene media

International Nuclear Information System (INIS)

Sudersanan, M.; Sundaram, A.K.

1975-01-01

Mixed chelate formation of indium with several β-diketones has been studied in benzene media. The extraction of indium by benzoyltrifluoroacetone (BFA) and furoyltrifluoroacetone (FFA) has been carried out as a function of pH and concentration of the ligand to ascertain the nature of the complexes. The extraction of indium by a mixture of β-diketones, viz., BFA-benzoylacetone(BA), BFA-dibenzoylmethene (DBM), FFA-BA, FFA-DBM, FFA-BFA and DBM-BA has also been studied as a function of the solution parameters. The nature of the mixed complexes formed as well as their equilibrium constants, statistical and stabilisation constants have been evaluated. (author)

False positive indium-111 white blood cell scan in a closed clavicle fracture

International Nuclear Information System (INIS)

Friedman, R.J.; Gordon, L.

1988-01-01

Aggressive treatment of the multiply injured patient often requires early fixation of many fractures, some of which may be open. Often, patients develop postoperative fevers requiring a thorough workup to rule out infection. Recently, indium-111 white blood cell (WBC) imaging has become a valuable adjunct in the diagnosis of acute infection. The patient described had a simple, closed clavicle fracture with markedly increased activity on an indium-111 WBC scan obtained for fever workup. This subsequently proved to be a normal, healing, noninfected fracture by other diagnostic techniques. Noninfected, simple closed fractures should be added to the list of causes for a false-positive indium-111 WBC scan

The mobility of indium and gallium in groundwater systems: constraining the role of sorption in sand column experiments

Science.gov (United States)

Dror, I.; Ringering, K.; Yecheskel, Y.; Berkowitz, B.

2017-12-01

The mobility of indium and gallium in groundwater environments was studied via laboratory experiments using quartz sand as a porous medium. Indium and gallium are metals of very low abundance in the Earth's crust and, correspondingly, the biosphere is only adapted to very small concentrations of these elements. However, in modern semiconductor industries, both elements play a central role and are incorporated in devices of mass production such as smartphones and digital cameras. The resulting considerable increase in production, use and discharge of indium and gallium throughout the last two decades, with a continuous and fast increase in the near future, raises questions regarding the fate of both elements in the environment. However, the transport behavior of these two metals in soils and groundwater systems remains poorly understood to date. Because of the low solubility of both elements in aqueous solutions, trisodium citrate was used as a complexation agent to stabilize the solutions, enabling investigation of the transport of these metals at neutral pH. Column experiments showed different binding capacities for indium and gallium, where gallium is much more mobile compared to indium and both metals are substantially retarded in the column. Different affinities were also confirmed by examining sorption isotherms of indium and gallium in equilibrium batch systems. The effect of natural organic matter on the mobility of indium and gallium was also studied, by addition of humic acid. For both metals, the presence of humic acid affects the sorption dynamics: for indium, sorption is strongly inhibited leading to much higher mobility, whereas gallium showed a slightly higher sorption affinity and very similar mobility compared to the same setup without humic acid addition. However, in all cases, the binding capacity of gallium to quartz is much weaker than that of indium. These results are consistent with the assumption that indium and gallium form different types

Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

International Nuclear Information System (INIS)

Horstmann, F.; Sittinger, V.; Szyszka, B.

2009-01-01

In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

Multifunctional doxorubicin/superparamagnetic iron oxide-encapsulated Pluronic F127 micelles used for chemotherapy/magnetic resonance imaging

Science.gov (United States)

Lai, Jian-Ren; Chang, Yong-Wei; Yen, Hung-Chi; Yuan, Nai-Yi; Liao, Ming-Yuan; Hsu, Chia-Yen; Tsai, Jai-Lin; Lai, Ping-Shan

2010-05-01

Polymeric micelles are frequently used to transport and deliver drugs throughout the body because they protect against degradation. Research on functional polymeric micelles for biomedical applications has generally shown that micelles have beneficial properties, such as specific functionality, enhanced specific tumor targeting, and stabilized nanostructures. The particular aim of this study was to synthesize and characterize multifunctional polymeric micelles for use in controlled drug delivery systems and biomedical imaging. In this study, a theranostic agent, doxorubicin/superparamagnetic iron oxide (SPIO)-encapsulated Pluronic F127 (F127) micelles, was developed for dual chemotherapy/magnetic resonance imaging (MRI) purposes, and the structure and composition of the micellar SPIO were characterized by transmission electron microscopy and magnetic measurements. Our results revealed that the micellar SPIO with a diameter of around 100 nm led to a significant advantage in terms of T2 relaxation as compared with a commercial SPIO contrast agent (Resovist®) without cell toxicity. After doxorubicin encapsulation, a dose-dependent darkening of MR images was observed and HeLa cells were killed by this theranostic micelle. These findings demonstrate that F127 micelles containing chemotherapeutic agents and SPIO could be used as a multifunctional nanocarrier for cancer treatment and imaging.

Indium and thallium

International Nuclear Information System (INIS)

1976-01-01

The physical and the chemical properties and methods for producing indium and its main compounds have been studied. Presented are the major fields of application of the metal, inclusive of the atomic and space engineering. Described are the natural occurrence and the types of deposits of this disseminated element. Given are the main methods for extracting In from various raw materials, the methods being also evaluated economically. It is inferred, that all the conditions being equal, the extraction technique yields In at a lesser cost, a higher recovery and higher labour productivity. Described are methods for manufacturing the frequently used In compounds, such as the antimonide, arsenide, phosphide

Indium flotation from hydrometallurgical solutions

International Nuclear Information System (INIS)

Sviridov, V.V.; Mal'tsev, G.I.; Petryakova, N.K.; Gomzikov, A.I.

1980-01-01

The principal possibility of flotation of indium small quantities (10 -4 gxion/l) is established from sulphuric-acid solutions of leaching converter dusts of the copper melting production in the form of complex compounds with sodium hexametaphosphate and cation-active nitrogen-containing surfactants. It is shown that the flotation process effectiveness is determined by the molar ratio of hexametaphosphate and collector introduced into the solution, solution oxidity and surfactant nature

Evaluation of musculoskeletal sepsis with indium-111 white blood cell imaging

International Nuclear Information System (INIS)

Ouzounian, T.J.; Thompson, L.; Grogan, T.J.; Webber, M.M.; Amstutz, H.C.

1987-01-01

The detection of musculoskeletal sepsis, especially following joint replacement, continues to be a challenging problem. Often, even with invasive diagnostic evaluation, the diagnosis of infection remains uncertain. This is a report on the first 55 Indium-111 white blood cell (WBC) images performed in 39 patients for the evaluation of musculoskeletal sepsis. There were 40 negative and 15 positive Indium-111 WBC images. These were correlated with operative culture and tissue pathology, aspiration culture, and clinical findings. Thirty-eight images were performed for the evaluation of possible total joint sepsis (8 positive and 30 negative images); 17 for the evaluation of nonarthroplasty-related musculoskeletal sepsis (7 positive and 10 negative images). Overall, there were 13 true-positive, 39 true-negative, two false-positive, and one false-negative images. Indium-111 WBC imaging is a sensitive and specific means of evaluating musculoskeletal sepsis, especially following total joint replacement

{sup 127}I and {sup 129}I/{sup 127}I isotopic ratio in marine alga Fucus virsoides from the North Adriatic Sea

Energy Technology Data Exchange (ETDEWEB)

Osterc, Andrej [Department of Environmental Sciences, Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Stibilj, Vekoslava [Department of Environmental Sciences, Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)], E-mail: vekoslava.stibilj@ijs.si

2008-04-15

The only stable iodine isotope is {sup 127}I and the natural {sup 129}I/{sup 127}I ratio in the biosphere has increased from 10{sup -15}-10{sup -14} to 10{sup -10}-10{sup -9}, mainly due to emissions from nuclear fuel reprocessing plants. In Europe they are located at La Hague (France) and Sellafield (England), where the ratio of {sup 129}I/{sup 127}I is up to 10{sup -4}. The marine environment, i.e. the oceans, is the major source of iodine with average concentrations of around 60 {mu}g L{sup -1} iodine in seawater. Brown algae accumulate iodine at high levels of up to 1.0% of dry weight, and therefore they are an ideal bioindicator for studying the levels of {sup 127}I and {sup 129}I in the marine environment. A radiochemical neutron activation analysis (RNAA) method, developed at our laboratory, was used for {sup 129}I determination in the brown alga Fucus virsoides (Donati) J. Agardh, and the same technique of RNAA was used for total {sup 127}I determination. The samples were collected along the coast of the Gulf of Trieste and the West coast of Istria in the North Adriatic Sea in the period from 2005 to 2006. Values of the {sup 129}I/{sup 127}I ratio up to 10{sup -9} were found, which is in agreement with the present average global distribution of {sup 129}I. The levels of stable iodine found were in the range from 235 to 506 {mu}g g{sup -1} and the levels of {sup 129}I from 1.7 to 7.3 x 10{sup -3} Bq kg{sup -1} (2.6-10.9 x 10{sup -7} {mu}g g{sup -1}), on a dry matter basis.

Indium-bridged [1]ferrocenophanes.

Science.gov (United States)

Bagh, Bidraha; Sadeh, Saeid; Green, Jennifer C; Müller, Jens

2014-02-17

Indium-bridged [1]ferrocenophanes ([1]FCPs) and [1.1]ferrocenophanes ([1.1]FCPs) were synthesized from dilithioferrocene species and indium dichlorides. The reaction of Li2fc⋅tmeda (fc = (H4C5)2Fe) and (Mamx)InCl2 (Mamx = 6-(Me2NCH2)-2,4-tBu2C6H2) gave a mixture of the [1]FCP (Mamx)Infc (4(1)), the [1.1]FCP [(Mamx)Infc]2 (4(2)), and oligomers [(Mamx)Infc]n (4(n)). In a similar reaction, employing the enantiomerically pure, planar-chiral (Sp,Sp)-1,1'-dibromo-2,2'-diisopropylferrocene (1) as a precursor for the dilithioferrocene derivative Li2fc(iPr2), equipped with two iPr groups in the α position, gave the inda[1]ferrocenophane 5(1) [(Mamx)Infc(iPr2)] selectively. Species 5(1) underwent ring-opening polymerization to give the polymer 5(n). The reaction between Li2fc(iPr2) and Ar'InCl2 (Ar' = 2-(Me2NCH2)C6H4) gave an inseparable mixture of the [1]FCP Ar'Infc(iPr2) (6(1)) and the [1.1]FCP [Ar'Infc(iPr2)]2 (6(2)). Hydrogenolysis reactions (BP86/TZ2P) of the four inda[1]ferrocenophanes revealed that the structurally most distorted species (5(1)) is also the most strained [1]FCP. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radioactive indium labelling of the figured elements of blood. Method, results, applications

International Nuclear Information System (INIS)

Ducassou, D.; Nouel, J.P.

Following the work of Thakur et al. the authors became interested in red corpuscle, leucocyte and platelet labelling with indium 111 or 113m (8 hydroxyquinolein-indium). For easier labelling of the figured elements of blood the technique described was modified. The chelate is prepared by simple contact at room temperature of indium 111 or 113m chloride and water-soluble 8 hydroxyquinolein sulphate, in the presence of 0.2M TRIS buffer. The figured element chosen suspended in physiological serum is added directly to the solution obtained, the platelets and leucocytes being separated out beforehand by differential centrifugation. While it gives results similar to those of Thabur et al. the method proposed avoids the chloroform extraction of the radioactive chelate and the use of alcohol, liable to impair the platelet regation capacity [fr

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

KAUST Repository

Elafandy, Rami T.; Bhattacharya, Pallab K.; Cha, Dong Kyu; Ng, Tien Khee; Ooi, Boon S.; Zhang, Meng

2012-01-01

Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature

Flow measurements in biological systems using Xe-127 and Xe-133

International Nuclear Information System (INIS)

Tripathi, R.R.

1981-01-01

Xe-133 and Xe-127 are widely used for quantitative evaluation of ventilation in human subjects. Owing to differences in scattering in the biological system as well as differences in the detector response to photons of selected energies, clinical Xe-133 images are much more distorted than the corresponding Xe-127 images. This thesis concerns itself with the evaluation of Xe-133 and Xe-127 as potential tracers for pulmonary function studies. Through the simulation of clinical images it is shown that such smaller abnormalities are able to be detected with Xe-127 than with Xe-133. It is also found that even for poorly ventilated regions, the measured lesion size in the simulated image is comparable to the known lesion size when studied with Xe-127. With Xe-133, however, the measured size of the lesion is smaller than its known size. By fitting the washout portion of the clinical data to a linear sum of two exponentials, a weighted average clearance constant for the tracer - which relates to the reciprocal of the mean flow through the system - can be calculated and used as an index for comparison of the two Xenon isotopes. When an appropriate model is used for data interpretation, more accurate clinical information can be derived from the Xe-127 data. Unlike Xe-133, ventilation study with Xe-127 can be performed immediately after the perfusion study with Tc-99m. Lower radiation dose and longer shelf-life of Xe-127 are added advantages over Xe-133. Various compartmental and non-compartmental models are examined and appropriate technique(s) for clinical data interpretation is(are) recommended

Deposition and surface treatment of Ag-embedded indium tin oxide by plasma processing

International Nuclear Information System (INIS)

Kim, Jun Young; Kim, Jae-Kwan; Kim, Ja-Yeon; Kwon, Min-Ki; Yoon, Jae-Sik; Lee, Ji-Myon

2013-01-01

Ag-embedded indium tin oxide (ITO) films were deposited on Corning 1737 glass by radio-frequency magnetron sputtering under an Ar or Ar/O 2 mixed gas ambient with a combination of ITO and Ag targets that were sputtered alternately by switching on and off the shutter of the sputter gun. The effects of a subsequent surface treatment using H 2 and H 2 + O 2 mixed gas plasma were also examined. The specific resistance of the as-deposited Ag-embedded ITO sample was lower than that of normal ITO. The transmittance was quenched when Ag was incorporated in ITO. To enhance the specific resistance of Ag-embedded ITO, a surface treatment was conducted using H 2 or H 2 + O 2 mixed gas plasma. Although all samples showed improved specific resistance after the H 2 plasma treatment, the transmittance was quenched due to the formation of agglomerated metals on the surface. The specific resistance of the film was improved without any deterioration of the transmittance after a H 2 + O 2 mixed gas plasma treatment. - Highlights: • Ag-embedded indium tin oxide was deposited. • The contact resistivity was decreased by H 2 + O 2 plasma treatment. • The process was carried out at room temperature without thermal treatment. • The mechanism of enhancing the contact resistance was clarified

Effect of Indium nano-sandwiching on the structural and optical performance of ZnSe films

Directory of Open Access Journals (Sweden)

S.E. Al Garni

Full Text Available In the current study, we attempted to explore the effects of the Indium nanosandwiching on the mechanical and optical properties of the physically evaporated ZnSe thin films by means of X-ray diffractions and ultraviolet spectrophotometry techniques. While the thickness of each layer of ZnSe was fixed at 1.0 μm, the thickness of the nanosandwiched Indium thin films was varied in the range of 25–100 nm. It was observed that the as grown ZnSe films exhibits cubic and hexagonal nature of crystallization as those of the ZnSe powders before the film deposition. The cubic phases weighs ∼70% of the structure. The analysis of this phases revealed that there is a systematic variation process presented by the decreasing of; the lattice constant, compressing strain, stress, stacking faults and dislocation intensity and increasing grain size resulted from increasing the Indium layer thickness in the range of 50–100 nm. In addition, the nanosandwiching of Indium between two layers of ZnSe is observed to enhance the absorbability of the ZnSe. Particularly, at incident photon energy of 2.38 eV the absorbability of the ZnSe films which are sandwiched with 100 nm Indium is increased by 13.8 times. Moreover, increasing the thickness of the Indium layer shrinks the optical energy band gap. These systematic variations in mechanical and optical properties are assigned to the better recrystallization process that is associated with Indium insertion which in turn allows total internal energy redistribution in the ZnSe films through the enlargement of grains. Keywords: ZnSe, Nanosandwiching, Mechanical, Optical gap

Voltammetry and coulometry of indium in two-side thin-layer system

International Nuclear Information System (INIS)

Eliseeva, L.V.; Kabanova, O.L.

1980-01-01

An electrochemical behaviour of In and possibilities for its determination have been investigated, using halide background solutions, by voltametry in the thin solution layer thin mercury film system. It has been shown that the maximum current of indium (3) is directly proportional to its concentration over a range of 1x10 -4 - 5x10 -3 M and the maximum current of indium oxidation from the amalgam over a range of 5x10 -7 - 1x10 -4 M. Examined were the effects of halide ion concentration, pH, electrode potential change rate on current maximum value, product efficiency of reducing indium (3) and oxidizing its amalgam, on maximum current potential and half-peak width. The analytical signal has been found to be directly proportional to chloride ion concentration over a range of 0.1 - 3.0 M, bromide and iodide ion concentration over a range of 0.1 - 1.0 M. This makes it possible to use the method for determination of halide ions

Optical investigations on indium oxide nano-particles prepared through precipitation method

International Nuclear Information System (INIS)

Seetha, M.; Bharathi, S.; Dhayal Raj, A.; Mangalaraj, D.; Nataraj, D.

2009-01-01

Visible light emitting indium oxide nanoparticles were synthesized by precipitation method. Sodium hydroxide dissolved in ethanol was used as a precipitating agent to obtain indium hydroxide precipitates. Precipitates, thus formed were calcined at 600 deg. C for 1 h to obtain indium oxide nanoparticles. The structure of the particles as determined from the X-Ray diffraction pattern was found to be body centered cubic. The phase transformation of the prepared nanoparticles was analyzed using thermogravimetry. Surface morphology of the prepared nanoparticles was analyzed using high resolution-scanning electron microscopy and transmission electron microscopy. The results of the analysis show cube-like aggregates of size around 50 nm. It was found that the nanoparticles have a strong emission at 427 nm and a weak emission at 530 nm. These emissions were due to the presence of singly ionized oxygen vacancies and the nature of the defect was confirmed through Electron paramagnetic resonance analysis.

Electrical properties of indium arsenide irradiated with fast neutrons

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

1987-01-01

A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

Equation of state of liquid Indium under high pressure

Directory of Open Access Journals (Sweden)

Huaming Li

2015-09-01

Full Text Available We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

Indium Tin Oxide-Free Polymer Solar Cells: Toward Commercial Reality

DEFF Research Database (Denmark)

Angmo, Dechan; Espinosa Martinez, Nieves; Krebs, Frederik C

2014-01-01

Polymer solar cell (PSC) is the latest of all photovoltaic technologies which currently lies at the brink of commercialization. The impetus for its rapid progress in the last decade has come from low-cost high throughput production possibility which in turn relies on the use of low-cost materials...... and vacuum-free manufacture. Indium tin oxide (ITO), the commonly used transparent conductor, imposes the majority of the cost of production of PSCs, limits flexibility, and is feared to create bottleneck in the dawning industry due to indium scarcity and the resulting large price fluctuations. As such...

13 CFR 127.403 - What happens if SBA verifies the concern's eligibility?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What happens if SBA verifies the concern's eligibility? 127.403 Section 127.403 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Eligibility Examinations § 127...

Chemical composition of cadmium selenochromite crystals doped with indium, silver and gallium

International Nuclear Information System (INIS)

Bel'skij, N.K.; Ochertyanova, L.I.; Shabunina, G.G.; Aminov, T.G.

1985-01-01

The high accuracy chemical analysis Which allows one to observe doping effect on the cadmium selenochromite crystal composition is performed. The problem on the possibility of impurity atom substitution for basic element is considered on the basis of data of atomic-absorption analysis of doped crystals. The crystals of cadmium selenochromite doped with indium by chromium to cadmium ratio are distributed into two groups and probably two types of substitution take place. At 0.08-1.5 at.% indium concentrations the Cr/Cd ratio >2. One can assume that indium preferably takes cadmium tetrahedral positions whereas at 1.5-2.5 at. % concentrations the Cr/Cd ratio =2 and cadmium is substituted for silver which does not contradict crystallochemical and physical properties of this compound. In crystals with gallium the Cr/Cd ratio <2. Gallium preferably substitutes chromium

The density of molten indium at temperatures up to 600 K

International Nuclear Information System (INIS)

Alchagirov, B.B.; Khatsukov, A.M.; Mozgovoj, A.G.

2004-01-01

The liquid indium density measurement is carried out through the pycnometric method within the temperature range of 434-600 K both by heating and cooling. The totality of the obtained results was processed through the approximating equation. The root-mean-square deviation of the experimental data from the approximating equation does not exceed ±0.01%. The high accuracy of the obtained results is noted. The deviation of the existing data on the liquid indium density from the approximating equation is shown graphically [ru

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

KAUST Repository

Elafandy, Rami T.

2011-12-01

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

Positive indium-III bone marrow scan in metastatic breast carcinoma. Case report

International Nuclear Information System (INIS)

LaManna, M.M.; Hyzinski, M.; Swami, V.K.; Parker, J.A.

1984-01-01

Indium is generally presumed to localize in the bone marrow within the erythroid cell line. Fibrosis, inflammation, lymphoma, extended field radiation, chemotherapy, or combinations of both treatment modalities generally depress the uptake of indium by the marrow in a complex fashion. We report a case of metastatic breast carcinoma and pancytopenia in which the In-111 scan appeared qualitatively similar to a Tc-99m MDP bone scan. Findings were confirmed by bone marrow biopsy

Heat-up synthesis of Ag–In–S and Ag–In–S/ZnS nanocrystals: Effect of indium precursors on their optical properties

International Nuclear Information System (INIS)

Chen, Siqi; Ahmadiantehrani, Mojtaba; Zhao, Jialong; Zhu, Shaihong; Mamalis, Athanasios G.; Zhu, Xiaoshan

2016-01-01

Cadmium-free I–III–VI nanocrystals (NCs) have recently attracted much research interests due to their excellent optical properties and low toxicity. In this work, with a simple heat-up synthetic system to prepare high quality Ag–In–S (AIS) NCs and their core/shell structures (AIS/ZnS NCs), we investigated the effect of different indium precursors (indium acetate and indium chloride) on NC optical properties. The measurements on photoluminescence spectra of AIS NCs show that the photoluminescence peak-wavelength of AIS NCs using indium acetate is in the range from 596 to 604 nm, and that of AIS NCs using indium chloride is from 641 to 660 nm. AIS and AIS/ZnS NCs using indium acetate present around 15% and 40% QYs, and both AIS and AIS/ZnS NCs using indium chloride present around 31% QYs. The photoluminescence decay study indicates that the lifetime parameters of AIS and AIS/ZnS using indium chloride are 2–4 times larger than those of AIS and AIS/ZnS NCs using indium acetate. Moreover, AIS NCs using indium chloride have a slower photobleaching dynamics than AIS NCs using indium acetate, and ZnS shell coating on both types of AIS NCs significantly enhances their photostability against UV exposure. We believe that the unique optical properties of AIS and AIS/ZnS NCs will open an avenue for these materials to be employed in broad electronic or biomedical applications. - Highlights: • High quality of AIS and AIS/ZnS NCs were prepared by heat-up. • Different indium precursors in AIS synthesis can impact AIS optical properties. • The impacted optical properties include emission colors, brightness and life time. • The reason why different indium precursors impact optical properties was explored. • The prepared NCs may have broad electronic and biomedical applications.

13 CFR 127.700 - What penalties may be imposed under this part?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What penalties may be imposed under this part? 127.700 Section 127.700 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Penalties § 127.700 What penalties may...

32 CFR 643.127 - Quarters.

Science.gov (United States)

2010-07-01

... Additional Authority of Commanders § 643.127 Quarters. The assignment and rental of quarters to civilian employees and other nonmilitary personnel will be accomplished in accordance with AR 210-50. Responsibility of the Corps of Engineers for the establishment of rental rates for quarters rented to civilian and...

Electrochemical impedance spectroscopy investigation on indium tin oxide films under cathodic polarization in NaOH solution

International Nuclear Information System (INIS)

Gao, Wenjiao; Cao, Si; Yang, Yanze; Wang, Hao; Li, Jin; Jiang, Yiming

2012-01-01

The electrochemical corrosion behaviors of indium tin oxide (ITO) films under the cathodic polarization in 0.1 M NaOH solution were investigated by electrochemical impedance spectroscopy. The as-received and the cathodically polarized ITO films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction for morphological, compositional and structural studies. The results showed that ITO films underwent a corrosion process during the cathodic polarization and the main component of the corrosion products was body-centered cubic indium. The electrochemical impedance parameters were related to the effect of the cathodic polarization on the ITO specimens. The capacitance of ITO specimens increased, while the charge transfer resistance and the inductance decreased with the increase of the polarization time. The proposed mechanism indicated that the corrosion products (metallic indium) were firstly formed during the cathodic polarization and then absorbed on the surface of the ITO film. As the surface was gradually covered by indium particles, the corrosion process was suppressed. - Highlights: ► Cathodic polarization of indium tin oxide (ITO) in 0.1 M NaOH. ► Cathodic polarization studied with electrochemical impedance spectroscopy. ► ITO underwent a corrosion attack during cathodic polarization, indium was observed. ► Electrochemical parameters of ITO were obtained using equivalent electrical circuit. ► A corrosion mechanism is proposed.

Indium-111 granulocyte scintigraphy in inflammatory bowel disease

International Nuclear Information System (INIS)

Devillers, A.; Moisan, A.; Heresbach, D.; Darnault, P.; Bretagne, J.F.

1996-01-01

The present paper reports our experience since 1963 concerning 111-indium labeled autologous granulocytes scanning in the assessment of inflammatory bowel diseases and in the assessment of activity in Crohn's disease and ulcerative colitis. (authors). 94 refs., 3 figs

Effect of heat treatment on anodic activation of aluminium by trace element indium

Energy Technology Data Exchange (ETDEWEB)

Graver, Brit [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Helvoort, Antonius T.J. van [Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Nisancioglu, Kemal, E-mail: kemal.nisancioglu@material.ntnu.n [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway)

2010-11-15

Research highlights: {yields} Indium segregation activates AlIn alloy surface anodically in chloride solution. {yields} Enrichment of In on Al surface can occur thermally by heat treatment at 300 {sup o}C. {yields} Increasing temperature homogenises indium in aluminium reducing anodic activation. {yields} Indium can activate AlIn surface by segregating through dealloying of aluminium. {yields} Anodic activation is caused by AlIn amalgam formation at aluminium surface. - Abstract: The presence of trace elements in Group IIIA-VA is known to activate aluminium anodically in chloride environment. The purpose of this paper is to investigate the surface segregation of trace element In by heat treatment and resulting surface activation. Model binary AlIn alloys, containing 20 and 1000 ppm by weight of In, were characterized after heat treatment at various temperatures by use of glow discharge optical emission spectroscopy, electron microscopy and electrochemical polarization. Heat treatment for 1 h at 300 {sup o}C gave significant segregation of discrete In particles (thermal segregation), which activated the surface. Indium in solid solution with aluminium, obtained by 1 h heat treatment at 600 {sup o}C, also activated by surface segregation of In on alloy containing 1000 ppm In, resulting from the selective dissolution of the aluminium component during anodic oxidation (anodic segregation). The effect of anodic segregation was reduced by decreasing indium concentration in solid solution; it had negligible effect at the 20 ppm level. The segregated particles were thought to form a liquid phase alloy with aluminium during anodic polarization, which in turn, together with the chloride in the solution destabilized the oxide.

Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

Science.gov (United States)

Georgieva, V.; Aleksandrova, M.; Stefanov, P.; Grechnikov, A.; Gadjanova, V.; Dilova, T.; Angelov, Ts

2014-12-01

A study of NO2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO2 concentrations. The QCM-ITO system becomes sensitive at NO2 concentration >= 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO2 concentration. When the NO2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO2 in the air at room temperature.

Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

International Nuclear Information System (INIS)

Georgieva, V; Gadjanova, V; Angelov, Ts; Aleksandrova, M; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Stefanov, P; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Dilova, T; Grechnikov, A

2014-01-01

A study of NO 2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO 2 concentrations. The QCM-ITO system becomes sensitive at NO 2 concentration ≥ 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO 2 concentration. When the NO 2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO 2 in the air at room temperature

Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM

Energy Technology Data Exchange (ETDEWEB)

Lee, Cheol-Hee; Jeong, Mi-Kyung [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, Cheonan 331-717 (Korea, Republic of); Fatih Kilicaslan, M. [Department of Physics, Faculty of Art and Science, Kastamonu University, Kastamonu (Turkey); Lee, Jong-Hyeon [Graduate School of Green Energy Technology and Department of Nanomaterials Engineering, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Dajeon 305-764 (Korea, Republic of); Hong, Hyun-Seon [Advanced Materials and Processing Center, Institute for Advanced Engineering (IAE), Yongin 449-863 (Korea, Republic of); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering and Institute for Rare Metals, Kongju National University, Cheonan 331-717 (Korea, Republic of)

2013-03-15

Highlights: ► In this study, we recovered indium from a waste LCD panel. ► The ITO glass was milled to obtain micron size particles in a HEBM machine. ► Effect of particle size of ITO glass on the amount of dissolved In was investigated. ► In a very short time, a considerable amount of In was recovered. ► Amount of HCl in acid solution was decreased to 40 vol.%. - Abstract: In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

Electron emission from individual indium arsenide semiconductor nanowires

NARCIS (Netherlands)

Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

2007-01-01

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

A sol-gel method to synthesize indium tin oxide nanoparticles

Institute of Scientific and Technical Information of China (English)

Xiuhua Li; Xiujuan xu; Xin Yin; Chunzhong Li; Jianrong Zhang

2011-01-01

Transparent conductive indium tin oxide (ITO) nanoparticles were synthesized by a novel sol-gel method.Granulated indium and tin were dissolved in HNO3 and partially complexed with citric acid.A sol-gel process was induced when tertiary butyl alcohol was added dropwise to the above solution.ITO nanoparticles with an average crystallite size of 18.5 nm and surface area of 32.6 m2/g were obtained after the gel was heat-treated at 700 C.The ITO nanoparticles showed good sinterability,the starting sintering temperature decreased sharply to 900 C,and the 1400 C sintered pellet had a density of 98.1 ％ of theoretical density (TD).

Polarografic study about the complex formation between indium (III) and sodium azide, in aqueous media

International Nuclear Information System (INIS)

Tokoro, R.; Bertotti, M.

1988-01-01

The present work is a branch of the main work concerned with the complex formation between several metal cations and azide ligand in aqueous media. The polarographic behavior of indium in azide system showed the tendency of complexation. Using polarographic method to determine the half potential of indium at each analytical concentration afforded experimental data to evaluate the constants. The azide concentrations was modified from 1 m to 100 m , the ionic strength held at 2,0 M with sodium perchlorate, indium concentration 7.892 x 10 -4 M, and temperature kept constant at 25,0 0 C. (author) [pt

Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

International Nuclear Information System (INIS)

Pathan, H.M.; Lokhande, C.D.; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan

2005-01-01

Indium sulphide (In 2 S 3 ) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In 2 S 3 thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

Science.gov (United States)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Isomer spectroscopy of {sup 125,127}Cd

Energy Technology Data Exchange (ETDEWEB)

Naqvi, F. [Institut fuer Kernphysik, Universitaet Koeln (Germany); GSI, Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Gorska, M.; Grawe, H.; Pietri, S. [GSI, Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Caceres, L. [GSI, Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Departmento de Fisicia Teorica, Universidad Autonoma de Madrid (Spain); Jungclaus, A. [Departmento de Fisicia Teorica, Universidad Autonoma de Madrid (Spain); Pfuetzner, M. [IEP, Warsaw University, Warsaw (Poland); Regan, P.H; Podolyak, Z. [Department of Physics, University of Surrey, Guildford (United Kingdom); Rudolf, D. [Department of Physics, Lund University (Sweden)

2010-07-01

The results of investigations of isomeric decay in odd mass heavy Cd isotopes namely {sup 125,127}Cd are reported. To date information has been obtained on even mass heavy Cd isotopes and the systematics show evolution of single particle energies for them. The experiment was performed at GSI, Darmstadt to investigate the single particle level structure of odd mass heavy Cd isotopes. Nuclei of interest were produced in fragmentation reaction of {sup 136}Xe beam at energy 750MeV/u on a {sup 9}Be target of 4g/cm{sup 2} thickness. Selection of ions from unwanted reaction products and event by event identification was facilitated by FRagment Separator (FRS). Isomers populated in the reaction were implanted in a plastic catcher surrounded by 15 Ge cluster detectors from RISING array to detect gamma radiations. Level schemes based on the intensity balance and life time information were constructed for the first time for these nuclei. Comparison of the experimental results with shell model calculation are discussed.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Science.gov (United States)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Indium phosphide space solar cell research: Where we are and where we are going

Science.gov (United States)

Jain, R. K.; Flood, D. J.; Weinberg, Irving

1995-01-01

Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

Standard test methods for chemical and spectrochemical analysis of nuclear-Grade silver-indium-cadmium alloys

CERN Document Server

American Society for Testing and Materials. Philadelphia

1990-01-01

1.1 These test methods cover procedures for the chemical and spectrochemical analysis of nuclear grade silver-indium-cadmium (Ag-In-Cd) alloys to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Silver, Indium, and Cadmium by a Titration Method 7-15 Trace Impurities by Carrier-Distillation Spectro- chemical Method 16-22 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. For specific hazard and precautionary statements, see Section 5 and Practices E50. 7.1 This test method is applicable to the determination of silver, indium, and cadmium in alloys of approximately 80 % silver, 15 % indium, and 5 % cadmium used in nuclear reactor control r...

Pyrolytically grown indium sulfide sensitized zinc oxide nanowires for solar water splitting

Energy Technology Data Exchange (ETDEWEB)

Komurcu, Pelin; Can, Emre Kaan; Aydin, Erkan; Semiz, Levent [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Gurol, Alp Eren; Alkan, Fatma Merve [Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Sankir, Mehmet; Sankir, Nurdan Demirci [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey)

2015-11-15

Zinc oxide (ZnO) nanowires, sensitized with spray pyrolyzed indium sulfide, were obtained by chemical bath deposition. The XRD analysis indicated dominant evolution of hexagonal ZnO phase. Significant gain in photoelectrochemical current using ZnO nanowires is largely accountable to enhancement of the visible light absorption and the formation of heterostructure. The maximum photoconversion efficiency of 2.77% was calculated for the indium sulfide sensitized ZnO nanowire photoelectrodes. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Indium-111 platelet scintigraphy in carotid disease

International Nuclear Information System (INIS)

Branchereau, A.; Bernard, P.J.; Ciosi, G.; Bazan, M.; de Laforte, C.; Elias, A.; Bouvier, J.L.

1988-01-01

Forty-five patients (35 men, 10 women) undergoing carotid surgery had Indium-111 platelet scintigraphy as part of their preoperative work-up. Imaging was performed within three hours after injection of the Indium-111. A second series of views was obtained 24 hours later and repeated at 24 hour intervals for two days. Of 54 scintigrams, 22 were positive and 32 negative. Positive results were defined as a twofold or more increase in local activity on a visualized carotid after 24 hours. The sensitivity of the method was 41%, intraoperatively, and the specificity, 100%. The low sensitivity places this method behind sonography and duplex-scanning for screening patients for surgery. We believe that indications for platelet scintigraphy are limited to: 1. Repeated transient ischemic attacks in the same territory with minimal lesions on arteriography and non-homogeneous plaque on duplex scan; 2. Symptomatic patients being treated medically as a possible argument for surgery; 3. Determining therapeutic policy for patients having experienced a transient ischemic attack with a coexisting intracardiac thrombus

Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

KAUST Repository

Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

2012-01-01

A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

Synthesis of indium nanoparticles at ambient temperature; simultaneous phase transfer and ripening

Energy Technology Data Exchange (ETDEWEB)

Aghazadeh Meshgi, Mohammad; Kriechbaum, Manfred [Graz University of Technology, Institute of Inorganic Chemistry (Austria); Biswas, Subhajit; Holmes, Justin D., E-mail: j.holmes@ucc.ie [University College Cork, Materials Chemistry and Analysis Group, Department of Chemistry and the Tyndall National Institute (Ireland); Marschner, Christoph, E-mail: christoph.marschner@tugraz.at [Graz University of Technology, Institute of Inorganic Chemistry (Austria)

2016-12-15

The synthesis of size-monodispersed indium nanoparticles via an innovative simultaneous phase transfer and ripening method is reported. The formation of nanoparticles occurs in a one-step process instead of well-known two-step phase transfer approaches. The synthesis involves the reduction of InCl{sub 3} with LiBH{sub 4} at ambient temperature and although the reduction occurs at room temperature, fine indium nanoparticles, with a mean diameter of 6.4 ± 0.4 nm, were obtained directly in non-polar n-dodecane. The direct synthesis of indium nanoparticles in n-dodecane facilitates their fast formation and enhances their size-monodispersity. In addition, the nanoparticles were highly stable for more than 2 months. The nanoparticles were characterised by dynamic light scattering (DLS), small angle X-ray scattering (SAXS), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared (FT-IR) spectroscopy to determine their morphology, structure and phase purity.

Indium recovery from acidic aqueous solutions by solvent extraction with D2EHPA: a statistical approach to the experimental design

Directory of Open Access Journals (Sweden)

Fortes M.C.B.

2003-01-01

Full Text Available This experimental work presents the optimization results of obtaining a high indium concentration solution and minimum iron poisoning by solvent extraction with D2EHPA solubilized in isoparaffin and exxsol. The variables studied in the extraction step were D2EHPA concentration, acidity of the aqueous phase and time of contact between phases. Different hydrochloric and sulfuric acid concentrations were studied for the stripping step. The optimum experimental conditions resulted in a solution with 99% indium extraction and less than 4% iron. The construction of a McCabe-Thiele diagram indicated two theoretical countercurrent stages for indium extraction and at least six stages for indium stripping. Finally, the influence of associated metals found in typical sulfate leach liquors from zinc plants was studied. Under the experimental conditions for maximum indium extraction, 96% indium extraction was obtained, iron extraction was about 4% and no Ga, Cu and Zn were co-extracted.

New compounds of indium(III) with 2,4'-bipyridine

International Nuclear Information System (INIS)

Czakis-Sulikowska, D.; Kaluzna-Czaplinska, J.

2000-01-01

The aim of present work was to obtain complexes of indium(III) with 2,4'-bipyridine and examine some of their physico-chemical properties (solubility, molar conductivity in methanol, IR spectra and thermal analysis)

Synthesis and biologic studies of iodinated (125I/127I) ethidium

International Nuclear Information System (INIS)

Ho Nanhui; Tumeh, Paul C.; Kassis, Amin I.

2001-01-01

An iodinated ( 125 I/ 127 I) ethidium derivative (3,8-diamino-5-[6'-(p-iodobenzoylamino)-4'-azahexyl]-6 -phenylphenanthridinium chloride hydrochloride) was synthesized and characterized. The labeling yield of the 125 I-labeled derivative was 75% for carrier-free 125 I, with a radiochemical purity of 95%. The incubation of iodoethidium with calf thymus DNA resulted in a substantial enhancement of fluorescence yield, indicating the intercalation of this compound into DNA. In the presence of iodoethidium, the nuclei of methanol-treated mammalian cells fluoresced, while those of viable cells did not (since the plasma membrane is impermeable to iodoethidium). When viable cells were incubated with the reduced form of the derivative, 125 I/ 127 I-dihydroethidium traversed the plasma membrane, was oxidized in the cytoplasm, and intercalated into nuclear DNA. Finally, we tested the hypothesis that larger malignant solid tumors, containing a relatively greater percentage of degenerating permeable cells, can be targeted with 125 I-ethidium. In-vivo studies demonstrated a small but positive correlation (R = 0.72) between tumor volume and the uptake of the derivative. Because of the ubiquitous presence of abnormal permeable cells and necrosis in tumors, our results support the belief that radiolabeled DNA-intercalating or DNA-binding molecules may be of diagnostic and therapeutic value for a variety of solid tumors in humans

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

Science.gov (United States)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

TEM and XANES study of MOVPE grown InAIN layers with different indium content

International Nuclear Information System (INIS)

Kret, S; Wolska, A; Klepka, M T; Letrouit, A; Ivaldi, F; Szczepańska, A; Carlin, J-F; Kaufmann, N A K; Grandjean, N

2011-01-01

We present structure and spatially resolved composition studies by TEM (Transmission Electron Microscopy) and XANES (X-ray Absorption Near Edge Structure) of InAIN MOVPE (Metal-Organic Vapor Phase Epitaxy) epilayers containing 16-27 at% of indium. Investigations of the In L 3 edge by synchrotron radiation absorption show a significant change of the post-edge structure depending on the indium content. We attribute this to the solubility limit and phase separation in this system. Our measurements suggest that the critical composition is 18% for our growth conditions. HRTEM cross-sectional and EDX investigations confirm such phase separation as well as the changing of the structure from 2D growth to columnar like growth for the sample with the highest indium content.

Indium sulfide buffer layers deposited by dry and wet methods

International Nuclear Information System (INIS)

Asenjo, B.; Sanz, C.; Guillen, C.; Chaparro, A.M.; Gutierrez, M.T.; Herrero, J.

2007-01-01

Indium sulfide (In 2 S 3 ) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In 2 S 3 films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass

[Mechanism of renal elimination of 2 elements of group IIIA of the periodic table : aluminum and indium].

Science.gov (United States)

Galle, P

1981-01-05

Aluminium and indium, two elements of group IIIA of the periodic table, are concentrated by the kidney inside lysosomes of proximal tubule cell. In these lysosomes, aluminium and indium are precipitated as non-soluble phosphate salts and these precipitates are then expelled in the tubular lumen and eliminated with the urinary flow. These data have been visualized by analytical microscopy (ion microscopy and X ray microanalysis). Local acid phosphatases are assumed to permit the concentration of aluminium and indium salts inside the lysosomes.

13 CFR 127.101 - What type of assistance is available under this part?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What type of assistance is available under this part? 127.101 Section 127.101 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES General Provisions § 127.101...

Pushing indium phosphide quantum dot emission deeper into the near infrared

Science.gov (United States)

Saeboe, A. M.; Kays, J.; Mahler, A. H.; Dennis, A. M.

2018-02-01

Cadmium-free near infrared (NIR) emitting quantum dots (QDs) have significant potential for multiplexed tissue-depth imaging applications in the first optical tissue window (i.e., 650 - 900 nm). Indium phosphide (InP) chemistry provides one of the more promising cadmium-free options for biomedical imaging, but the full tunability of this material has not yet been achieved. Specifically, InP QD emission has been tuned from 480 - 730 nm in previous literature reports, but examples of samples emitting from 730 nm to the InP bulk bandgap limit of 925 nm are lacking. We hypothesize that by generating inverted structures comprising ZnSe/InP/ZnS in a core/shell/shell heterostructure, optical emission from the InP shell can be tuned by changing the InP shell thickness, including pushing deeper into the NIR than current InP QDs. Colloidal synthesis methods including hot injection precipitation of the ZnSe core and a modified successive ion layer adsorption and reaction (SILAR) method for stepwise shell deposition were used to promote growth of core/shell/shell materials with varying thicknesses of the InP shell. By controlling the number of injections of indium and phosphorous precursor material, the emission peak was tuned from 515 nm to 845 nm (2.41 - 1.47 eV) with consistent full width half maximum (FWHM) values of the emission peak 0.32 eV. To confer water solubility, the nanoparticles were encapsulated in PEGylated phospholipid micelles, and multiplexing of NIR-emitting InP QDs was demonstrated using an IVIS imaging system. These materials show potential for multiplexed imaging of targeted QD contrast agents in the first optical tissue window.

Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata, E-mail: neillohit@yahoo.co.in

2014-11-30

Graphical abstract: - Highlights: • CdS film grown on indium coated glass substrates via CBD and subsequent annealing. • Disappearance of the indium (1 1 2) peak confirms interdiffusion at 300 °C. • SIMS indicates the subsequent interdiffusion at progressively higher temperature. • Composite In–CdS layer showed lower photosensitivity compared to pure CdS. - Abstract: In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

Isotope release cytotoxicity assay applicable to human tumors: the use of 111-indium

Energy Technology Data Exchange (ETDEWEB)

Frost, P; Wiltrout, R; Maciorowski, Z; Rose, N R

1977-01-01

We have demonstrated that human tumors can be labelled efficiently with the 111indium-oxine chelate. Subsequently, this isotope can be released by cytotoxic lymphoid cells. Both natural and induced cytotoxicity can be demonstrated utilizing this isotope release method. Because of the slow spontaneous release of 111indium and its efficient labelling of human tumor cells, this isotope release assay can be utilized in long-term cytotoxic assays in the study of human tumor immunology.

Improved field emission from indium decorated multi-walled carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Sreekanth, M.; Ghosh, S., E-mail: santanu1@physics.iitd.ernet.in; Biswas, P.; Kumar, S.; Srivastava, P.

2016-10-15

Graphical abstract: Improved field emission properties have been achieved for Indium (In) decorated MWCNTs and are shown using the schematic of field emission set up with In/CNT cathode, and a plot of J-E characteristics for pristine and In decorated CNTs. - Highlights: • Field emission (FE) properties have been studied for the first time from Indium (In) decorated MWCNT films. • Observed increased density of states near the Fermi level for In decorated films. • Superior field emission properties have been achieved for In decorated CNT films. - Abstract: Multi-walled carbon nanotube (MWCNT) films were grown using thermal chemical vapor deposition (T-CVD) process and were decorated with indium metal particles by thermal evaporation technique. The In metal particles are found to get oxidized. The In decorated films show 250% enhancement in the FE current density, lower turn-on and threshold fields, and better temporal stability as compared to their undecorated counterpart. This improvement in field emission properties is primarily attributed to increased density of states near the Fermi level. The presence of O 2p states along with a small contribution from In 5s states results in the enhancement of density of states in the vicinity of the Fermi level.

Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Energy Technology Data Exchange (ETDEWEB)

Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

2015-08-31

This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

NARCIS (Netherlands)

Morales-Masis, M.; Dauzou, F.; Jeangros, Q.; Dabirian, A.; Lifka, H.; Gierth, R.; Ruske, M.; Moet, D.; Hessler-Wyser, A.; Ballif, C.

2016-01-01

Flexible large-area organic light-emitting diodes (OLEDs) require highly conductive and transparent anodes for efficient and uniform light emission. Tin-doped indium oxide (ITO) is the standard anode in industry. However, due to the scarcity of indium, alternative anodes that eliminate its use are

33 CFR 127.105 - Layout and spacing of marine transfer area for LNG.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Layout and spacing of marine transfer area for LNG. 127.105 Section 127.105 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF... AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas § 127.105 Layout and...

Phosphasalen indium complexes showing high rates and isoselectivities in rac-lactide polymerizations

Energy Technology Data Exchange (ETDEWEB)

Myers, Dominic; White, Andrew J.P. [Department of Chemistry, Imperial College London (United Kingdom); Forsyth, Craig M. [School of Chemistry, Monash University, Clayton, VIC (Australia); Bown, Mark [CSIRO Manufacturing, Bayview Avenue, Clayton, VIC (Australia); Williams, Charlotte K. [Department of Chemistry, Oxford University (United Kingdom)

2017-05-02

Polylactide (PLA) is the leading bioderived polymer produced commercially by the metal-catalyzed ring-opening polymerization of lactide. Control over tacticity to produce stereoblock PLA, from rac-lactide improves thermal properties but is an outstanding challenge. Here, phosphasalen indium catalysts feature high rates (30±3 m{sup -1} min{sup -1}, THF, 298 K), high control, low loadings (0.2 mol %), and isoselectivity (P{sub i}=0.92, THF, 258 K). Furthermore, the phosphasalen indium catalysts do not require any chiral additives. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of fabrication conditions on the properties of indium tin oxide powders

International Nuclear Information System (INIS)

Xie Wei

2008-01-01

This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity in and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350°C and Sn doping content 6∼8wt% are determined. The application of ITO in the military camouflage field is proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

33 CFR 127.1105 - Layout and spacing of marine transfer area for LHG.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Layout and spacing of marine transfer area for LHG. 127.1105 Section 127.1105 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF... Construction § 127.1105 Layout and spacing of marine transfer area for LHG. Each new waterfront facility...

33 CFR 127.313 - Bulk storage.

Science.gov (United States)

2010-07-01

...) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The operator...: (1) LNG. (2) LPG. (3) Vessel fuel. (4) Oily waste from vessels. (5) Solvents, lubricants, paints, and...

33 CFR 127.311 - Motor vehicles.

Science.gov (United States)

2010-07-01

...) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.311 Motor vehicles. (a) The operator... storage tank or loading flange. (b) During transfer operations, no person may— (1) Stop or park a motor...

5 CFR 1201.127 - Judicial review.

Science.gov (United States)

2010-01-01

... PROCEDURES Procedures for Original Jurisdiction Cases Special Counsel Disciplinary Actions § 1201.127 Judicial review. (a) An employee subject to a final Board decision imposing disciplinary action under 5 U.S... appropriate United States district court. 5 U.S.C. 1508. Special Counsel Corrective Actions ...

Preparation and nonlinear optical properties of indium nanocrystals in sodium borosilicate glass by the sol–gel route

International Nuclear Information System (INIS)

Zhong, Jiasong; Xiang, Weidong; Zhao, Haijun; Chen, Zhaoping; Liang, Xiaojuan; Zhao, Wenguang; Chen, Guoxin

2012-01-01

Graphical abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel methods. And the indium nanocrystals in tetragonal crystal system have formed uniformly in the glass, and the average diameter of indium nanocrystals is about 30 nm. The third-order optical nonlinear refractive index γ, absorption coefficient β, and susceptibility χ (3) of the glass are determined to be −4.77 × 10 −16 m 2 /W, 2.67 × 10 −9 m/W, and 2.81 × 10 −10 esu, respectively. Highlights: ► Indium nanocrystals embedded in glass matrix have been prepared by sol–gel route. ► The crystal structure and composition are investigated by XRD and XPS. ► Size and distribution of indium nanocrystals is determined by TEM. ► The third-order optical nonlinearity is investigated by using Z-scan technique. -- Abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel route. The thermal stability behavior of the stiff gel is investigated by thermogravimetric (TG) and differential thermal (DTA) analysis. The crystal structure of the glass is characterized by X-ray powder diffraction (XRD). Particle composition is determined by X-ray photoelectron spectroscopy (XPS). Size and distribution of the nanocrystals are characterized by transmission electron microscopy (TEM) as well as high-resolution transmission electron microscopy (HRTEM). Results show that the indium nanocrystals in tetragonal crystal structure have formed in glass, and the average diameter is about 30 nm. Further, the glass is measured by Z-scan technique to investigate the nonlinear optical (NLO) properties. The third-order NLO coefficient χ (3) of the glass is determined to be 2.81 × 10 −10 esu. The glass with large third-order NLO coefficient is promising materials for applications in optical devices.

Determination of indium in geological materials by electrothermal-atomization atomic absorption spectrometry with a tungsten-impregnated graphite furance

Science.gov (United States)

Zhou, L.; Chao, T.T.; Meier, A.L.

1984-01-01

The sample is fused with lithium metaborate and the melt is dissolved in 15% (v/v) hydrobromic acid. Iron(III) is reduced with ascorbic acid to avoid its coextraction with indium as the bromide into methyl isobutyl ketone. Impregnation of the graphite furnace with sodium tungstate, and the presence of lithium metaborate and ascorbic acid in the reaction medium improve the sensitivity and precision. The limits of determination are 0.025-16 mg kg-1 indium in the sample. For 22 geological reference samples containing more than 0.1 mg kg-1 indium, relative standard deviations ranged from 3.0 to 8.5% (average 5.7%). Recoveries of indium added to various samples ranged from 96.7 to 105.6% (average 100.2%). ?? 1984.

Indium-111 labelled leucocyte scintigraphy in the diagnosis of inflammatory disease

International Nuclear Information System (INIS)

Roevekamp, M.H.

1982-01-01

The purpose of this study was to evaluate the diagnostic usefulness of indium-111 oxinate labelled autologous leucocytes in inflammatory disease. Chapter I provides an outline of the theoretical aspects of leucocyte labelling with indium-111 oxinate, as well as giving a description of the labelling method and scintigraphic technique and of the in-vitro and in-vivo studies performed to evaluate the method. In Chapter II details are given of the initial results obtained in a pilot study. A high false-negative rate led to modification of the labelling technique. The results obtained in patients suspected of intra-abdominal or retroperitoneal located inflammatory lesions are described in Chapter III. Chapter IV contains the description of an indium-111-leucocyte-99mTc-Sn-colloid computer-assisted subtraction technique for a better evaluation of patients suspected of an upper-abdominal inflammatory process. In Chapter V the study performed in patients after arterial reconstructive surgery is described, and the results obtained in patients suspected of an infected orthopaedic prosthesis are given in Chapter VI. Finally the characteristics of the different types of inflammatory responses is reviewed. (Auth.)

Impact of surfactants on the target recognition of Fab-conjugated PLGA nanoparticles.

Science.gov (United States)

Kennedy, Patrick J; Perreira, Ines; Ferreira, Daniel; Nestor, Marika; Oliveira, Carla; Granja, Pedro L; Sarmento, Bruno

2018-06-01

Targeted drug delivery with nanoparticles (NPs) requires proper surface ligand presentation and availability. Surfactants are often used as stabilizers in the production of targeted NPs. Here, we evaluated the impact of surfactants on ligand functionalization and downstream molecular recognition. Our model system consisted of fluorescent poly(lactic-co-glycolic acid) (PLGA) NPs that were nanoprecipitated in one of a small panel of commonly-used surfactants followed by equivalent washes and conjugation of an engineered Fab antibody fragment. Size, polydispersity index and zeta potential were determined by dynamic light scattering and laser Doppler anemometry, and Fab presence on the NPs was assessed by enzyme-linked immunosorbent assay. Most importantly, Fab-decorated NP binding to the cell surface receptor was monitored by fluorescence-activated cell sorting. 2% polyvinyl alcohol, 1% sodium cholate, 0.5% Pluronic F127 (F127) and 2% Tween-80 were initially tested. Of the four surfactants tested, PLGA NPs in 0.5% F127 and 2% Tween-80 had the highest cell binding. These two surfactants were then retested in two different concentrations, 0.5% and 2%. The Fab-decorated PLGA NPs in 2% F127 had the highest cell binding. This study highlights the impact of common surfactants and their concentrations on the downstream targeting of ligand-decorated NPs. Similar principles should be applied in the development of future targeted nanosystems where surfactants are employed. Copyright © 2018 Elsevier B.V. All rights reserved.

Studies on preparation and characterization of indium doped zinc ...

Indian Academy of Sciences (India)

Unknown

The preparation of indium doped zinc oxide films is discussed. ... XRD studies have shown a change in preferential orientation from (002) to .... at grain boundaries in the form of In(OH)3, hindering the .... Angular substrate to nozzle distance.

33 CFR 127.1101 - Piping systems.

Science.gov (United States)

2010-07-01

...) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Hazardous Gas Design and Construction § 127.1101 Piping systems... pipeline on a pier or wharf must be located so that it is not exposed to physical damage from vehicular...

Preparation of curcumin-loaded pluronic F127/chitosan nanoparticles for cancer therapy

International Nuclear Information System (INIS)

Phuc Le, Thi Minh; Pham, Van Phuc; Lua Dang, Thi Minh; Huyen La, Thi; Le, Thi Hanh; Le, Quang Huan

2013-01-01

Nanoparticles (NPs) have been proven to be an effective delivery system with few side effects for anticancer drugs. In this study, curcumin-loaded NPs have been prepared by an ionic gelation method using chitosan (Chi) and pluronic ® F-127 (PF) as carriers to deliver curcumin to the target cancer cells. Prepared NPs were characterized using Zetasizer, fluorescence microscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Our results showed that the encapsulation efficiency of curcumin was approximately 50%. The average size of curcumin-loaded PF/Chi NPs was 150.9 nm, while the zeta potential was 5.09 mV. Cellular uptake of curcumin-loaded NPs into HEK293 cells was confirmed by fluorescence microscopy. (paper)

Synthesis of indium oxide cubic crystals by modified hydrothermal route for application in room temperature flexible ethanol sensors

International Nuclear Information System (INIS)

Seetha, M.; Meena, P.; Mangalaraj, D.; Masuda, Yoshitake; Senthil, K.

2012-01-01

Highlights: ► For the first time HMT is used in the preparation of indium oxide. ► HMT itself acts as base for the precursor and results in cubic indium hydroxide. ► Modified hydrothermal route used for the preparation of cubic indium oxide crystals. ► As a new approach a composite film synthesized with prepared indium oxide. ► Film showed good response to ethanol vapours with quick response and recovery times. - Abstract: Indium oxide cubic crystals were prepared by using hexamethylenetetramine and indium chloride without the addition of any structure directing agents. The chemical route followed in the present work was a modified hydrothermal synthesis. The average crystallite size of the prepared cubes was found to be 40 nm. A blue emission at 418 nm was observed at room temperature when the sample was excited with a 380 nm Xenon lamp. This emission due to oxygen vacancies made the material suitable for gas sensing applications. The synthesized material was made as a composite film with polyvinyl alcohol which was more flexible than the films prepared on glass substrates. This flexible film was used as a sensing element and tested with ethanol vapours at room temperature. The film showed fast response as well as recovery to ethanol vapours with a sensor response of about 1.4 for 100 ppm of the gas.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Directory of Open Access Journals (Sweden)

Imas Noviyana

2017-06-01

Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

Rare gas isotope yields in bremsstrahlung-induced nuclear reactions of 41K, 87Rb, 127I, 133Cs, and 139La

International Nuclear Information System (INIS)

Oura, Y.; Yazawa, A.; Sarkar, S.R.; Sakamoto, K.; Shibata, S.; Fujiwara, I.; Furukawa, M.

1994-05-01

Radiochemical yield measurements have been reported for 41 K(γ, π + ) 41 Ar, 87 Rb(γ, π + ) 87 Kr, 133 Cs(γ, π + ) 133m,133g Xe, 127 I(γ, π - xn) 127-x Xe (x=0,2,4,5, and 6), 133 Cs(γ, pxn) 132-x Xe (x=1,3,5,7,9,10, and 11), and 139 La(γ, 3pxn) 136- xXe (x=7,9,11,13,14, and 15) at bremsstrahlung end-point energies(E 0 ) of 50-1200 MeV. For photopion reactions it has been confirmed that the both yields of (γ, π - ) and (γ, π + ) reactions are independent of target mass (A t ) and the yield ratios of (γ, π - ) to (γ, π + ) reactions are about 5 over the studied ranges of E 0 and A t . The profile of 127 I(γ, π - xn) yields as a function of x is similar to that of 133 Cs but quite different from that of 51 V when compared at the same E 0 , suggesting a strong A t dependence. It is also found that the photospallogenic Xe isotope yields from 133 Cs and 139 La are consistent with the reported mass yield pattems of the other radionuclides produced from the same targets. These results are discussed by referring to the previous literature values and to a cascade-evaporation calculation based on the PICA code by Gabriel and Alsmiller. (author)

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

International Nuclear Information System (INIS)

Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

2016-01-01

Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

KAUST Repository

Lee, Kyu-Sung

2012-05-22

A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive layer of poly (3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester, a power conversion efficiency of 3.67% was obtained, a value comparable to devices having sputtered ITO electrode. Surface roughness and optical efficiency are improved when using the mixed TiO2−x–ITO electrode. The consumption of less indium allows for lower fabrication cost of such mixed thin filmelectrode.

Small lead and indium inclusions in aluminium

International Nuclear Information System (INIS)

Johnson, E.; Hjemsted, K.; Schmidt, B.; Bourdelle, K.K.; Johansen, A.; Andersen, H.H.; Sarholt-Kristensen, L.

1992-01-01

This paper reports implantation of lead or indium into aluminum results in spontaneous phase separation and formation of lead or indium precipitates. The precipitates grow in topotactical alignment with the matrix, giving TEM images characterized by moire fringes. The size and density of the precipitates increase with increasing fluence until coalescence begins to occur. Implantation at elevated temperatures lead to formation of large precipitates with well developed facets. This is particularly significant for implantation above the bulk melting point of the implanted species. Melting and solidification have been followed by in-situ TEM heating and cooling experiments. Superheating up to ∼50 K above the bulk melting point has been observed, and the largest inclusions melt first. Melting is associated with only partial loss of facetting of the largest inclusion. Initial growth of the inclusions occurs by trapping of atoms retained in supersaturated solution. Further growth occurs by coalescence of neighboring inclusion in the liquid phase. Solidification is accompanied by a strong undercooling ∼30 K below the bulk melting point, where the smallest inclusions solidify first. Solidification is characterized by spontaneous restoration of the facets and the topotactical alignment

33 CFR 127.1111 - Communication systems.

Science.gov (United States)

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Communication systems. 127.1111... systems. (a) The marine transfer area for LHG must possess a communication system that enables continuous... in charge of transfer for the facility. (b) The communication system required by paragraph (a) of...

Influence of indium concentration and substrate temperature on the physical characteristics of chemically sprayed ZnO:In thin films deposited from zinc pentanedionate and indium sulfate

International Nuclear Information System (INIS)

Castaneda, L; Morales-Saavedra, O G; Cheang-Wong, J C; Acosta, D R; Banuelos, J G; Maldonado, A; Olvera, M de la L

2006-01-01

Chemically sprayed indium-doped zinc oxide thin films (ZnO:In) were deposited on glass substrates starting from zinc pentanedionate and indium sulfate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the transport, morphology, composition, linear and nonlinear optical (NLO) properties of the ZnO:In thin films were studied. The structure of all the ZnO:In thin films was polycrystalline, and variation in the preferential growth with the indium content in the solution was observed: from an initial (002) growth in films with low In content, switching to a predominance of (101) planes for intermediate dopant regime, and finally turning to a (100) growth for heavily doped films. The crystallite size was found to decrease with doping concentration and range from 36 to 23 nm. The film composition and the dopant concentration were determined by Rutherford backscattering spectrometry; these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:In thin films were also found. In this way a resistivity of 4 x 10 -3 Ω cm and an average transmittance in the visible spectra of 85%, with a (101) preferential growth, were obtained in optimized ZnO:In thin films

Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD

International Nuclear Information System (INIS)

Lu, D.; Florescu, D.I.; Lee, D.S.; Ramer, J.C.; Parekh, A.; Merai, V.; Li, S.; Begarney, M.J.; Armour, E.A.; Gardner, J.J.

2005-01-01

Nonuniform indium distribution within InGaN/GaN single quantum well (SQW) structures with nanoscale islands grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by advanced characterization techniques. Robinson backscattered electron (BSE) measurements show cluster-like BSE contrast of high brightness regions, which are not centered at small dark pits in a SQW structure of spiral growth mode. By comparing with the secondary electron (SE) images, the bright cluster areas from the BSE images were found to have higher indium content compared to the surrounding dark areas. Temperature dependant photoluminescence (PL) measurement shows typical ''S-shape'' curve, which shows good correlation with nonuniform indium distribution from BSE measurement. Optical evaluation of the samples show increased PL slope efficiency of the spiral mode SQW, which can be attributed to the presence of Indium inhomogeneities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide

International Nuclear Information System (INIS)

Tanaka, Akiyo

2004-01-01

Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials

Determination of trace amounts of indium in some sediments by means of coprecipitation with zirconium hydroxide and differential pulse anodic stripping voltammetry

International Nuclear Information System (INIS)

Yoshimura, Wataru; Uzawa, Atushi; Hong Luxin.

1994-01-01

Indium in some sediments was determined by means of coprecipitation and differential pulse anodic stripping voltammetry. The analytical procedure was as follows. Fifty milliliters of distilled water is added to 10 ml of sample solution containing 0.04 g of sediment. Then, constant amounts of indium standard solution and 1 ml of zirconium oxychloride solution are added and the pH adjusted to 8.8 with ammonia water (1:2). The precipitate is separated by filtration and then dissolved in 25 ml of 4 M hydrochloric acid. After 1 ml of 5% KCNS solution is added, this solution is diluted to 50 ml with distilled water. A portion of this solution is employed for the determination of indium. After bubbling nitrogen gas through the sample solution for 100 s it was pre-electrolyzed for 100 s. The potential was scanned from -0.9 V to -0.3 Vυs. SCE for dissolution of indium ion. Indium ion was determined from the peak current of the voltammogram. The results are as follows: (1) Zirconium hydroxide was the most effective collector of indium when the pH was adjusted to 8.8 with ammonia water (1:2). (2) Iron (III) and cadmium ions were found to interfere with the determination of indium. (3) The analytical procedure took about 90 min and 0.01 ppm of indium in sample solution could be determined. (4) This method is applicable to the determination of indium in river bottom and sea floor sediment. (author)

Use of activable cations as tracers in groundwater hydrology. The case of DTPA-Indium

International Nuclear Information System (INIS)

Lumu, Badimbayi Matu.

1978-01-01

The possibilities of EDTA, CDTA and DTPA metallic complexes use as activable groundwater, tracers are discussed. Indium, which has good nuclear caracteristics for activation analysis and forms complexes of great stability with polyamino carboxylic acid has been for Laboratory and field studies. For corporative studies, Rhodomine B, a fluorescent tracer have been studied together with Indium complexes. In laboratory retention studies have been carried with In-EDTA, Iodine 131 and Rhodomine B, as tracers and bentonite, zeolite 13X and Dowex-1 and Dowex-50 as sorbents. As field studies, drainage evolution flow and resident time distribution of tracers substances in water, have been carried, under artificial rain conditions realized by aspersion. Results from field studies showed good characteristics of Indium Complexes especially in very absorbent medium (argilaceous limon) where their restitution balance were superior to that of Rhodomine B

13 CFR 127.100 - What is the purpose of this part?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What is the purpose of this part? 127.100 Section 127.100 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL... Federal contracting opportunities for women-owned small businesses (WOSBs) and to assist agencies in...

Determination of Ultralow Level 129I/127I in Natural Samples by Separation of Microgram Carrier Free Iodine and Accelerator Mass Spectrometry Detection

DEFF Research Database (Denmark)

Hou, Xiaolin; Zhou, Weijian; Chen, Ning

2010-01-01

of 129I/127I, and a detection limit of this method for 129I is calculated to be 105 atoms. This will allow us to accurately determine 129I in prenuclear geological samples of low iodine concentration with 129I/127I of 10−12, such as loess, soil, coral, rock, sediment, and groundwater. Some samples......Separation of carrier free iodine from low iodine level samples and accurate measurement of ultralow level 129I in micrograms of iodine target are essential but a bottleneck in geological dating of terrestrial system and tracer research using naturally produced 129I. In this work, we present...... a carrier free method using coprecipitation of AgI with AgCl for preparing micrograms of iodine target, associated with combustion using a tube furnace for separating iodine from solid samples and anion exchange chromatography for preconcentrating iodine from a large volume of water. An accelerator mass...

An optimized antibody-chelator conjugate for imaging of carcinoembryonic antigen with indium-111

International Nuclear Information System (INIS)

Sumerdon, G.A.; Rogers, P.E.; Lombardo, C.M.; Schnobrich, K.E.; Melvin, S.L.; Tribby, I.I.E.; Stroupe, S.D.; Johnson, D.K.; Hobart, E.D.

1990-01-01

A monoclonal antibody to carcinoembryonic antigen showing minimal cross-reactivity with blood cells and normal tissues was derivatized with benzylisothiocyanate derivatives of EDTA and DTPA. Seven chelators per immunoglobulin could be incorporated without loss of immunoreactivity. The resulting conjugates, labeled with indium-111, showed low liver uptake in animals. A cold kit, comprising the DTPA conjugate at a molarity of antibody bound chelator exceeding 1 x 10 -4 M, gave radiochemical yields of indium labeled antibody of ≥ 95% and was stable for 1 yr. (author)

14 CFR 382.127 - What procedures apply to stowage of battery-powered mobility aids?

Science.gov (United States)

2010-01-01

...-powered mobility aids? 382.127 Section 382.127 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT... DISABILITY IN AIR TRAVEL Stowage of Wheelchairs, Other Mobility Aids, and Other Assistive Devices § 382.127 What procedures apply to stowage of battery-powered mobility aids? (a) Whenever baggage compartment...

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Science.gov (United States)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

2015-03-01

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Evaluated neutronic file for indium

International Nuclear Information System (INIS)

Smith, A.B.; Chiba, S.; Smith, D.L.; Meadows, J.W.; Guenther, P.T.; Lawson, R.D.; Howerton, R.J.

1990-01-01

A comprehensive evaluated neutronic data file for elemental indium is documented. This file, extending from 10 -5 eV to 20 MeV, is presented in the ENDF/B-VI format, and contains all neutron-induced processes necessary for the vast majority of neutronic applications. In addition, an evaluation of the 115 In(n,n') 116m In dosimetry reaction is presented as a separate file. Attention is given in quantitative values, with corresponding uncertainty information. These files have been submitted for consideration as a part of the ENDF/B-VI national evaluated-file system. 144 refs., 10 figs., 4 tabs

13 CFR 127.301 - When may a contracting officer accept a concern's self-certification?

Science.gov (United States)

2010-01-01

... must refer the concern's self-certification to SBA for verification of the concern's eligibility by... accept a concern's self-certification? 127.301 Section 127.301 Business Credit and Assistance SMALL... EDWOSB or WOSB Status § 127.301 When may a contracting officer accept a concern's self-certification? (a...

Indium-Catalyzed Annulation of o-Acylanilines with Alkoxyheteroarenes: Synthesis of Heteroaryl[b]quinolines and Subsequent Transformation to Cryptolepine Derivatives

Directory of Open Access Journals (Sweden)

Kyohei Yonekura

2018-04-01

Full Text Available We disclose herein the first synthetic method that is capable of offering heteroaryl[b]quinolines (HA[b]Qs with structural diversity, which include tricyclic and tetracyclic structures with (benzothienyl, (benzofuranyl, and indolyl rings. The target HA[b]Q is addressed by the annulation of o-acylanilines and MeO–heteroarenes with the aid of an indium Lewis acid that effectively works to make two different types of the N–C and C–C bonds in one batch. A series of indolo[3,2-b]quinolines prepared here can be subsequently transformed to structurally unprecedented cryptolepine derivatives. Mechanistic studies showed that the N–C bond formation is followed by the C–C bond formation. The indium-catalyzed annulation reaction thus starts with the nucleophilic attack of the NH2 group of o-acylanilines to the MeO-connected carbon atom of the heteroaryl ring in an SNAr fashion, and thereby the N–C bond is formed. The resulting intermediate then cyclizes to make the C–C bond through the nucleophilic attack of the heteroaryl-ring-based carbon atom to the carbonyl carbon atom, providing the HA[b]Q after aromatizing dehydration.

Synthesis of indium oxide cubic crystals by modified hydrothermal route for application in room temperature flexible ethanol sensors

Energy Technology Data Exchange (ETDEWEB)

Seetha, M., E-mail: seetha.phy@gmail.com [Department of Physics, SRM University, Kattankulathur, Kancheepuram Dt 603 203 (India); Meena, P. [Department of Physics, PSGR Krishnammal College for Women, Coimbatore 641 046 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.com [DRDO-BU Centre for Life Sciences, Bharathiar University Campus, Coimbatore (India); Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641 014 (India); Masuda, Yoshitake [National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560 (Japan); Senthil, K. [School of Advanced Materials Science and Engineering, Sungkyunkwan University (Suwon Campus), Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

2012-03-15

Highlights: Black-Right-Pointing-Pointer For the first time HMT is used in the preparation of indium oxide. Black-Right-Pointing-Pointer HMT itself acts as base for the precursor and results in cubic indium hydroxide. Black-Right-Pointing-Pointer Modified hydrothermal route used for the preparation of cubic indium oxide crystals. Black-Right-Pointing-Pointer As a new approach a composite film synthesized with prepared indium oxide. Black-Right-Pointing-Pointer Film showed good response to ethanol vapours with quick response and recovery times. - Abstract: Indium oxide cubic crystals were prepared by using hexamethylenetetramine and indium chloride without the addition of any structure directing agents. The chemical route followed in the present work was a modified hydrothermal synthesis. The average crystallite size of the prepared cubes was found to be 40 nm. A blue emission at 418 nm was observed at room temperature when the sample was excited with a 380 nm Xenon lamp. This emission due to oxygen vacancies made the material suitable for gas sensing applications. The synthesized material was made as a composite film with polyvinyl alcohol which was more flexible than the films prepared on glass substrates. This flexible film was used as a sensing element and tested with ethanol vapours at room temperature. The film showed fast response as well as recovery to ethanol vapours with a sensor response of about 1.4 for 100 ppm of the gas.

Elastic properties of zinc, cadmium, bismuth, thallium, tin, lead and their binary alloys with indium

International Nuclear Information System (INIS)

Magomedov, A.M.

1986-01-01

Rates of propagation of longitudinal and transverse acoustic waves in samples as well as density of Tl, Pb, Sn, Bi, Cd, Zn and their binary alloys with indium are determined. The results obtained are used for calculation of elasticity constants of these materials. It is stated that concentration dependences of elasticity constants for indium alloys have non-linear character; negative deflection from the additive line is observed

Microstructure-mechanical property relationships for Al-Cu-Li-Zr alloys with minor additions of cadmium, indium or tin

Science.gov (United States)

Blackburn, L. B.; Starke, E. A., Jr.

1989-01-01

Minor amounts of cadmium, indium or tin were added to a baseline alloy with the nominal composition of Al-2.4Cu-2.4Li-0.15Zr. These elements were added in an attempt to increase the age-hardening response of the material such that high strengths could be achieved through heat-treatment alone, without the need for intermediate mechanical working. The alloy variant containing indium achieved a higher peak hardness in comparison to the other alloy variations, including the baseline material, when aged at temperatures ranging from 160 C to 190 C. Tensile tests on specimens peak-aged at 160 indicated the yield strength of the indium-bearing alloy increased by approximately 15 percent compared to that of the peak-aged baseline alloy. In addition, the yield strength obtained in the indium-bearing alloy was comparable to that reported for similar baseline material subjected to a 6 percent stretch prior to peak-aging at 190 C. The higher strength levels obtaied for the indium-bearing alloy are attributed to increased number densities and homogeneity of both the T1 and theta-prime phases, as determined by TEM studies.

First-principles analysis of structural and opto-electronic properties of indium tin oxide

Science.gov (United States)

Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-05-01

Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

Sensation™ ‘Florida 127’ Strawberry

Science.gov (United States)

‘Florida127’ strawberry originated from a 2009 cross between Winterstar™ ‘FL 05-107’ (female parent) and unreleased selection FL 02-58 (male parent). It is a short-day genotype adapted to an annual plasticulture growing system. The plant is upright with open architecture, allowing air movement and e...

In-Situ Growth and Characterization of Indium Tin Oxide Nanocrystal Rods

Directory of Open Access Journals (Sweden)

Yan Shen

2017-11-01

Full Text Available Indium tin oxide (ITO nanocrystal rods were synthesized in-situ by a vapor-liquid-solid (VLS method and electron beam evaporation technique. When the electron-beam gun bombarded indium oxide (In2O3 and tin oxide (SnO2 mixed sources, indium and tin droplets appeared and acted as catalysts. The nanocrystal rods were in-situ grown on the basis of the metal catalyst point. The nanorods have a single crystal structure. Its structure was confirmed by X-ray diffraction (XRD and transmission electron microscopy (TEM. The surface morphology was analyzed by scanning electron microscopy (SEM. During the evaporation, a chemical process was happened and an In2O3 and SnO2 solid solution was formed. The percentage of doped tin oxide was calculated by Vegard’s law to be 3.18%, which was in agreement with the mixture ratio of the experimental data. The single crystal rod had good semiconductor switch property and its threshold voltage of single rod was approximately 2.5 V which can be used as a micro switch device. The transmission rate of crystalline nanorods ITO film was over 90% in visible band and it was up to 95% in the blue green band as a result of the oxygen vacancy recombination luminescence.

13 CFR 127.604 - How will SBA process an EDWOSB or WOSB status protest?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false How will SBA process an EDWOSB or WOSB status protest? 127.604 Section 127.604 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Protests § 127.604 How will SBA...

F-127-PEI co-delivering docetaxel and TFPI-2 plasmid for nasopharyngeal cancer therapy

Energy Technology Data Exchange (ETDEWEB)

Liu, Tao, E-mail: taoliu18@126.com [Department of Otolaryngology, Zhujiang Hospital, Southern Medical University, Guangzhou 510282 (China); Zhang, Xinyu [Department of Otolaryngology, Zhujiang Hospital, Southern Medical University, Guangzhou 510282 (China); Ke, Bo [Jiangxi Key Laboratory of Hematological Oncology and Cell Biology, Jiangxi Provincial People' s Hospital, Nanchang 330006 (China); Wang, Yigang [School of Life Sciences, Zhejiang Sci-Tech University, Hangzhou 310018 (China); Wu, Xidong [Department of Pharmacology, Jiangxi Institute of Materia Medica,Nanchang 330029 (China); Jiang, Gang [Department of Otolaryngology, Zhujiang Hospital, Southern Medical University, Guangzhou 510282 (China); Wu, Ting [Department of Light Chemical Engineering, Guangdong Polytechnic, Foshan 528041 (China); Nie, Guohui, E-mail: nghui@21cn.com [Department of Otolaryngological, Peking University Shenzhen Hospital, Shenzhen 518036 (China)

2016-04-01

The co-delivery of drug and gene has become the primary strategy in cancer therapy. However, to construct one safe co-delivering system with higher drug loading and gene transfection efficiency for cancer therapy is still challenging. Herein, a novel degradable nanocarriers were synthesized and characterized in this study, which was composed of polyethylenimine (PEI)-linked PEO–PPO–PEO (Pluronic F127), called F127-PEI. Then the nanocarrier was used for hydrophobic docetaxel (DOC) and functional gene (TFPI-2 plasmid) co-delivery to treat nasopharyngeal cancer (NPC). The results indicated that F127-PEI nanocarriers had higher DOC loading amount and possessed good gene delivery effect in vitro. For co-delivery analysis, the obtained F127-PEI/DOC/TFPI-2 complexes could induce a more significant apoptosis than DOC or TFPI-2 alone, and decreased invasive capacity of NPC HNE-1 cells more obviously. Moreover, the F127-PEI copolymer exhibited better blood compatibility and lower cytotoxicity compared to PEI-25k by the hemolysis and MTT assays, which suggests a promising potential for NPC therapy. - Highlights: • F127-PEI was synthesized and used for drug and gene co-delivery. • F127-PEI showed good delivery ability to docetaxel and TFPI-2 plasmid. • The co-loaded complexes showed synergistic effect to nasopharyngeal carcinoma. • F127-PEI showed better blood safety and lower cytotoxicity compared to PEI-25k.

F-127-PEI co-delivering docetaxel and TFPI-2 plasmid for nasopharyngeal cancer therapy

International Nuclear Information System (INIS)

Liu, Tao; Zhang, Xinyu; Ke, Bo; Wang, Yigang; Wu, Xidong; Jiang, Gang; Wu, Ting; Nie, Guohui

2016-01-01

The co-delivery of drug and gene has become the primary strategy in cancer therapy. However, to construct one safe co-delivering system with higher drug loading and gene transfection efficiency for cancer therapy is still challenging. Herein, a novel degradable nanocarriers were synthesized and characterized in this study, which was composed of polyethylenimine (PEI)-linked PEO–PPO–PEO (Pluronic F127), called F127-PEI. Then the nanocarrier was used for hydrophobic docetaxel (DOC) and functional gene (TFPI-2 plasmid) co-delivery to treat nasopharyngeal cancer (NPC). The results indicated that F127-PEI nanocarriers had higher DOC loading amount and possessed good gene delivery effect in vitro. For co-delivery analysis, the obtained F127-PEI/DOC/TFPI-2 complexes could induce a more significant apoptosis than DOC or TFPI-2 alone, and decreased invasive capacity of NPC HNE-1 cells more obviously. Moreover, the F127-PEI copolymer exhibited better blood compatibility and lower cytotoxicity compared to PEI-25k by the hemolysis and MTT assays, which suggests a promising potential for NPC therapy. - Highlights: • F127-PEI was synthesized and used for drug and gene co-delivery. • F127-PEI showed good delivery ability to docetaxel and TFPI-2 plasmid. • The co-loaded complexes showed synergistic effect to nasopharyngeal carcinoma. • F127-PEI showed better blood safety and lower cytotoxicity compared to PEI-25k

Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

Directory of Open Access Journals (Sweden)

Abd El-Hady B. Kashyout

2011-01-01

Full Text Available The ceramic target of Indium tinoxide (ITO (90% In2O3-10%SnO2 has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD, field emission scanning electron microscope (FESEM, atomic force microscope (AFM, UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222 and (400 of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm.

Laser- and gamma-induced transformations of optical spectra of indium-doped sodium borate glass

CERN Document Server

Kopyshinsky, O V; Zelensky, S E; Danilchenko, B A; Shakhov, O P

2003-01-01

The optical absorption and luminescence properties of indium-doped sodium borate glass irradiated by gamma-rays and by powerful UV lasers within the impurity-related absorption band are investigated experimentally. It is demonstrated that both the laser- and gamma-irradiation cause similar transformations of optical spectra in the UV and visible regions. The changes of the spectra observed are described with the use of a model which includes three types of impurity centres formed by differently charged indium ions.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

Science.gov (United States)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Properties of Formula 127 glass prepared with radioactive zirconia calcine

International Nuclear Information System (INIS)

Staples, B.A.; Pavlica, D.A.; Cole, H.S.

1982-09-01

Formula 127 glass has been developed to immobilize ICPP zirconia calcine. This glass has been prepared remotely on a laboratory scale basis with actual radioactive zirconia calcine retrieved after ten years of storage from Bin Set 2. The aqueous leachability of the glass produced was investigated and compared through application of the MCC-1, MCC-2 and Soxhlet leach tests with that of Formula 127 glass prepared with simulated calcine. The solid state properties of the glasses prepared with actual and simulated calcines were also measured by electron spectroscopy for chemical analysis (ESCA) and scanning electron microscopy energy dispersive x-ray (SEM-EDX). Based on the application of these leaching tests and analysis techniques the properties measured in this study are similar for 127 glass prepared with either simulated or radioactive calcine. 13 figures, 16 tables

Ellipsometric investigations of pyrolytically deposited thin indium oxide films

International Nuclear Information System (INIS)

Winkler, U.

1980-01-01

Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

Identification of ensuremath J^{π = 19/2^+} and ensuremath 23/2^+ isomeric states in 127Sb

Science.gov (United States)

Watanabe, H.; Lane, G. J.; Dracoulis, G. D.; Byrne, A. P.; Nieminen, P.; Kondev, F. G.; Ogawa, K.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Seweryniak, D.; Zhu, S.; Chowdhury, P.

2009-11-01

The nucleus ensuremath ^{127Sb} , which is on the neutron-rich periphery of the ensuremath β -stability region, has been populated in complex nuclear reactions involving deep-inelastic and fusion-fission processes with ensuremath {^{136}Xe} beams incident on thick targets. The previously known isomer at 2325 keV in ensuremath {^{127}Sb} has been assigned spin and parity ensuremath 23/2^+ , based on the measured ensuremath γ - ensuremath γ angular correlations and total internal conversion coefficients. The half-life has been determined to be 234(12) ns, somewhat longer than the value reported previously. The 2194 keV state has been assigned ensuremath J^{π} = 19/2^+ and identified as an isomer with ensuremath T_{1/2} = 14(1) ns , decaying by two ensuremath E2 branches. The observed level energies and transition strengths are compared with the predictions of a shell model calculation. Two ensuremath 15/2^+ states have been identified close in energy, and their properties are discussed in terms of mixing between vibrational and three-quasiparticle configurations.

Influence of disorder on the superconducting critical temperature in indium-opal nanocomposites

Science.gov (United States)

Zakharchuk, I.; Januzaj, A.; Mikhailin, N. Yu.; Traito, K. B.; Chernyaev, A. V.; Romanov, S. G.; Safonchik, M.; Shamshur, D. V.; Lähderanta, E.

2018-06-01

Transport properties of bulk indium-opal and indium-porous glass superconducting nanocomposites possessing moderate and strong disorder are investigated. A strongly nonmonotonous dependence of the global critical temperature Tc versus normal state conductivity of samples is found. The maximum, which is observed at moderate disorder, has Tc higher than that of clean bulk indium. The increasing part can be explained by the Eliashberg equations with disorder and an additional mechanism of interaction between superconducting and dielectric granules. The descending part of the maximum at higher disorder can be explained by the increasing of long-range Coulomb repulsion due to diffusion of charges. Negative slope in magnetic field dependence of resistivity and a peak in the temperature dependence of resistivity, observed in the sample near the proximity to the disorder-induced superconductor-insulator transition (SIT). A large difference between the onset temperature of superconducting fluctuations, Tcon , and global critical temperature Tc is found and considered in the framework of the weak multifractal theory. Slow time-logarithmic relaxation of the resistivity between Tc and Tcon is observed, which assumes existence of the precursor state near the SIT. This unusual state is discussed in the scope of the many-body localization theory.

Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping

Energy Technology Data Exchange (ETDEWEB)

Catalán, S.; Álvarez-Fraga, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Salas, E. [Spline CRG, ESRF, 38043 Grenoble (France); Ramírez-Jiménez, R. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avenida Universidad 30, Leganés, 28911 Madrid (Spain); Rodriguez-Palomo, A.; Andrés, A. de [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Cantoblanco, E-28049 Madrid (Spain)

2016-11-15

Highlights: • The charge mobility in IMO films is correlated with its hydrogen content. • The mobility behavior is explained by the presence of OH{sup −} groups in IMO films. • Mo{sup 4+} is identified in transparent conductive IMO by X-ray absorption spectroscopy. - Abstract: The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H{sub 2} in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H{sub 2} content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Mo{sup 4+} is placed at the In site of the indium oxide.

A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH2+ ions implanted-indium tin oxide substrate

International Nuclear Information System (INIS)

Liu Chenyao; Jiao Jiao; Chen Qunxia; Xia Ji; Li Shuoqi; Hu Jingbo; Li Qilong

2010-01-01

A new type of gold nanoparticle attached to a NH 2 + ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH 2 /indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10 15 ions/cm 2 . The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH 2 + ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

Work in progress: radionuclide imaging of indium-111-labeled eosinophils in mice

International Nuclear Information System (INIS)

Runge, V.M.; Rand, T.H.; Clanton, J.A.; Jones, J.P.; Colley, D.G.; Partain, C.L.; James, A.E. Jr.

1983-01-01

Eosinophils isolated from peritoneal exudates were labeled with indium-111-oxine and injected intravenously into sensitized mice. They became localized at sites of inflammation produced by intradermal injections of schistosomal antigen or Toxocara canis larvae, whereas labeled neutrophils did not. Intense uptake of eosinophils by normal spleen, liver, and bone marrow was noted, with tracer distribution effectively complete by 5 hours after injection. Indium-111-eosinophil studies appear to be quite sensitive to parasitic inflammatory reactions; in contrast, nonspecific inflammation such as that induced by turpentine causes localization of eosinophils, but to a lesser extent. This technique may be useful in the study of parasitic and allergic disease

Collective properties of the odd-mass I nuclei: 123,125,127I

Science.gov (United States)

Shroy, R. E.; Gordon, D. M.; Gai, M.; Fossan, D. B.; Gaigalas, A. K.

1982-09-01

The high-spin states of 123,125,127I have been investigated via the ASn(6Li, 3n)A+3I reactions to study the collective properties of the odd-mass I isotopes. In-beam measurements of γ-ray excitations, γ-γ coincidences, γ-ray angular distributions, and pulsed beam-γ timing were performed with Ge detectors to determine level energies, decay schemes, γ-ray multipolarities, Jπ assignments, and lifetime information. A similar study of the 117,119,121I isotopes is reported in the following paper. Two collective features have been identified in these odd-mass I nuclei. Systematic ΔJ=1 bands built on low-lying 92+ proton-hole (4p-1h) states were observed. The 92+ bandheads, that involve the excitation of a 1g92 proton across the Z=50 shell, drop to very low energies near the middle of the neutron shell. The properties of the 92+ proton-hole states for all of the odd-mass I isotopes are presented and related to the systematic information for the proton-hole states in the entire Z>50 transition region. Systematic ΔJ=2 bands built on 112- (1h112 quasiproton) states, on 72+ (1g72 quasiproton) states, and on 52+ (2d52 quasiproton) states were also observed. The ΔJ=2 band spacings generally follow the spacings of the Te-core ground-state bands with the exception of the 112- ΔJ=2 bands, for which the spacings decrease significantly relative to those for the Te cores as A decreases. These systematic properties are discussed in terms of several theoretical approaches to the onset of collectivity in transitional nuclei. An isomer at 2660 keV in 123I was observed to have a mean lifetime τ=38+/-3 ns. NUCLEAR REACTIONS 120-124Sn(6Li, 3n)123-127I measured γ-γ coincidences, γ(E, θ, t) deduced level schemes in odd-mass 123-127I, γ multipolarities, Jπ, T12. Enriched targets, Ge(Li) detectors.

Direct observation of indium compositional fluctuation in GaInN/GaN multi-quantum wells using an X-ray micro-beam from the 8-GeV storage ring

Energy Technology Data Exchange (ETDEWEB)

Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro; Fuutagawa, Noriyuki [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Terada, Yasuko [Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)

2008-07-01

We measured the micrometer-scale fluctuation of the indium contents in a 50 {mu}m x 30 {mu}m region of annealed Ga{sub 0.8}In{sub 0.2}N/GaN multi quantum wells by mapping the counts of indium fluorescent X-rays excited by a 1.3 {mu}m x 3.8 {mu}m X-ray micro-beam. The mapping indicates that two distinct regions - indium-rich and indium-poor regions - are formed by the annealing. The indium contents in the island-shaped low-indium regions are 20% less than in the surrounding high-indium region. As the island-shaped low-indium regions clearly coincide with the low-radiative regions as observed by Hg-lamp-excited fluorescent microscopy, we believe that the low-radiative regions are a result not of indium segregation but of the generation of defects such as plane defects. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electrical and optical properties of amorphous indium zinc oxide films

International Nuclear Information System (INIS)

Ito, N.; Sato, Y.; Song, P.K.; Kaijio, A.; Inoue, K.; Shigesato, Y.

2006-01-01

Valence electron control and electron transport mechanisms on the amorphous indium zinc oxide (IZO) films were investigated. The amorphous IZO films were deposited by dc magnetron sputtering using an oxide ceramic IZO target (89.3 wt.% In 2 O 3 and 10.7 wt.% ZnO). N-type impurity dopings, such as Sn, Al or F, could not lead to the increase in carrier density in the IZO. Whereas, H 2 introduction into the IZO deposition process was confirmed to be effective to increase carrier density. By 30% H 2 introduction into the deposition process, carrier density increased from 3.08 x 10 2 to 7.65 x 10 2 cm -3 , which must be originated in generations of oxygen vacancies or interstitial Zn 2+ ions. Decrease in the transmittance in the near infrared region and increase in the optical band gap were observed with the H 2 introduction, which corresponded to the increase in carrier density. The lowest resistivity of 3.39 x 10 -4 Ω cm was obtained by 10% H 2 introduction without substrate heating during the deposition

An electric detection of immunoglobulin G in the enzyme-linked immunosorbent assay using an indium oxide nanoparticle ion-sensitive field-effect transistor

International Nuclear Information System (INIS)

Lee, Dongjin; Cui, Tianhong

2012-01-01

Semiconducting nanoparticle ion-sensitive field-effect transistors (ISFETs) are used to detect immunoglobulin G (IgG) in the conventional enzyme-linked immunosorbent assay (ELISA). Indium oxide and silica nanoparticles were layer-by-layer self-assembled with the oppositely charged polyelectrolyte as the electrochemical transducer and antibody immobilization site, respectively. The assay was conducted on a novel platform of indium oxide nanoparticle ISFETs, where the electric signals are generated in response to the concentration of target IgG using the labeled detecting antibody. The sandwiched ELISA structure catalyzed the conversion of the acidic substrate into neutral substance with the aid of horseradish peroxidase. The pH change in the substrate solution was detected by nanoparticle ISFETs. Normal rabbit IgG was used as a model antigen whose detection limit of 0.04 ng ml −1 was found. The facile electric detection in the conventional assay through the semiconducting nanoparticle ISFET has potential applications as a point-of-care detection or a sensing element in a lab-on-a-chip system

Characteristics of indium-tin-oxide (ITO) nanoparticle ink-coated layers recycled from ITO scraps

Science.gov (United States)

Cha, Seung-Jae; Hong, Sung-Jei; Lee, Jae Yong

2015-09-01

This study investigates the characteristics of an indium-tin-oxide (ITO) ink layer that includes nanoparticles synthesized from ITO target scraps. The particle size of the ITO nanoparticle was less than 15 nm, and the crystal structure was cubic with a (222) preferred orientation. Also, the composition ratio of In to Sn was 92.7 to 7.3 in weight. The ITO nanoparticles were well dispersed in the ink solvent to formulate a 20-wt% ITO nanoparticle ink. Furthermore, the ITO nanoparticle ink was coated onto a glass substrate, followed by heat-treatment at 600 °C. The layer showed good sheet resistances below 400 Ω/□ and optical transmittances higher than 88% at 550 nm. Thus, we can conclude that the characteristics of the layer make it highly applicable to a transparent conductive electrode.

Study of the cerebro-spinal fluid circulation indium 111 labelled DTPA. Report of 300 cases

International Nuclear Information System (INIS)

Moreau, R.; Askienazy, S.; Mathieu, E.; Moretti, J.-L.

1976-01-01

A study of the C.S.F. circulation by intrathecal injection of radioactive tracers is a usual technique of neurological exploration. Indium-111 DTPA has numerous advantages for this type of study. It is a chelating agent, the renal clearance of which is rapid and which has no toxicity at the dose injected. Indium-111 is a cyclotron product with a half-life (2.8 days) compatible with the duration of the examination. Finally the dose of radioactivity delivered by this isotope is less than that of iodine 131, Technetium 99m, and ytterbium 169. In normal subjects after injection by the lumbar route, the average biological half-life measured by external counting lies between 20 and 28 hours. A study of the circulation of the C.S.F. is particularly useful in patients suspected of hydrocephalus. It permits finer diagnosis and shows the indication and type of by pass operation that may be necessary. An increase in the biological half-life of indium 111-DTPA seems to be a good indication for such an operation. An experience of 300 patients has shown the interest of the use of Indium 111-DTPA which now seems to be the best radio-isotope for the study of the subarachnoid space [fr

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

International Nuclear Information System (INIS)

Sallis, Shawn; Williams, Deborah S.; Quackenbush, Nicholas F.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.J.

2015-01-01

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In + lone pair active electrons as the origin of the deep subgap features. No In + species are observed, only In 0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

33 CFR 127.315 - Preliminary transfer inspection.

Science.gov (United States)

2010-07-01

... (CONTINUED) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.315 Preliminary transfer... parts; (b) For each of the vessel's cargo tanks from which cargo will be transferred, note the pressure...

Anodic behavior of Al-Zn-In sacrificial anodes at different concentration of zinc and indium

Energy Technology Data Exchange (ETDEWEB)

Keyvani, Ahmad [Shahrekord Univ. (Iran, Islamic Republic of). Dept. of Materials Engineering; Tehran Univ. (Iran, Islamic Republic of). School of Metallurgy and Materials; Saremi, Mohsen [Tehran Univ. (Iran, Islamic Republic of). School of Metallurgy and Materials; Saeri, Mohammad Reza [Shahrekord Univ. (Iran, Islamic Republic of). Dept. of Materials Engineering

2012-12-15

Al-Zn-In anodes show better performance due to the beneficial effects of Zn and In on prevention of aluminum passivity and producing a homogeneous structure for uniform corrosion of the anodes. However, there are different views about the optimum concentration of each element in the anode. In this study, the anodic behavior of Al-Zn-In alloy with different concentrations of zinc from 1 to 6wt.% and indium from 0.01 to 0.05wt.% are studied. The NACE efficiency test and polarization are used in 3wt.% NaCl solution for corrosion characterization. The results showed that zinc and indium change the anode potential to more active potentials and improve the microstructure uniformity of anodes. The latter leads to more uniform corrosion. Optimum concentrations of zinc (5wt.%) and indium (0.02wt.%) were found in this respect. (orig.)

Opto-electronic properties of chromium doped indium-tin-oxide films deposited at room temperature

International Nuclear Information System (INIS)

Chang Weiche; Lee Shihchin; Yang Chihhao; Lin Tienchai

2008-01-01

Indium-tin-oxide (ITO) doped chromium films were deposited on Corning 7059 glass prepared by radio frequency (RF) magnetron sputtering under various levels of sputtering power for the chromium target. Experimental results show that the surface roughness slightly decreases by co-sputtering Cr. The pure ITO films deposited at room temperature were amorphous-like. At 15 W of chromium target power, the structure of ITO: Cr film mainly consists of (2 2 2) crystallization plane, with minority of (2 1 1), (4 4 0), (6 6 2) crystallization planes. The carrier concentration of the ITO films increases with increasing the doping of chromium, however the mobility of the carrier decreases. When the sputtering power of the chromium target is at 7.5 W, there has a maximum carrier mobility of 27.3 cm 2 V -1 s -1 , minimum carrier concentration of 2.47 x 10 20 cm -3 , and lowest resistivity of 7.32 x 10 -4 Ω cm. The transmittance of all the chromium doped ITO films at the 300-800 nm wavelength region in this experiment can reach up to 70-85%. In addition, the blue shift of UV-Vis spectrum is not observed with the increase of carrier concentration

Effect of operating parameters on indium (III) ion removal by iron electrocoagulation and evaluation of specific energy consumption

Energy Technology Data Exchange (ETDEWEB)

Chou, Wei-Lung, E-mail: wlchou0388@hotmail.com [Department of Safety, Health and Environmental Engineering, Hungkuang University, Sha-Lu, Taichung 433, Taiwan (China); Wang, Chih-Ta [Department of Safety Health and Environmental Engineering, Chung Hwa University of Medical Technology, Tainan Hsien 717, Taiwan (China); Huang, Kai-Yu [Department of Safety, Health and Environmental Engineering, Hungkuang University, Sha-Lu, Taichung 433, Taiwan (China)

2009-08-15

The aim of this study is to investigate the effects of operating parameters on the specific energy consumption and removal efficiency of synthetic wastewater containing indium (III) ions by electrocoagulation in batch mode using an iron electrode. Several parameters, including different electrode pairs, supporting electrolytes, initial concentration, pH variation, and applied voltage, were investigated. In addition, the effects of applied voltage, supporting electrolyte, and initial concentration on indium (III) ion removal efficiency and specific energy consumption were investigated under the optimum balance of reasonable removal efficiency and relative low energy consumption. Experiment results indicate that a Fe/Al electrode pair is the most efficient choice of the four electrode pairs in terms of energy consumption. The optimum supporting electrolyte concentration, initial concentration, and applied voltage were found to be 100 mg/l NaCl, 20 mg/l, and 20 V, respectively. A higher pH at higher applied voltage (20 or 30 V) enhanced the precipitation of indium (III) ion as insoluble indium hydroxide, which improved the removal efficiency. Results from the indium (III) ion removal kinetics show that the kinetics data fit the pseudo second-order kinetic model well. Finally, the composition of the sludge produced was characterized with energy dispersion spectra (EDS).

Effect of operating parameters on indium (III) ion removal by iron electrocoagulation and evaluation of specific energy consumption

International Nuclear Information System (INIS)

Chou, Wei-Lung; Wang, Chih-Ta; Huang, Kai-Yu

2009-01-01

The aim of this study is to investigate the effects of operating parameters on the specific energy consumption and removal efficiency of synthetic wastewater containing indium (III) ions by electrocoagulation in batch mode using an iron electrode. Several parameters, including different electrode pairs, supporting electrolytes, initial concentration, pH variation, and applied voltage, were investigated. In addition, the effects of applied voltage, supporting electrolyte, and initial concentration on indium (III) ion removal efficiency and specific energy consumption were investigated under the optimum balance of reasonable removal efficiency and relative low energy consumption. Experiment results indicate that a Fe/Al electrode pair is the most efficient choice of the four electrode pairs in terms of energy consumption. The optimum supporting electrolyte concentration, initial concentration, and applied voltage were found to be 100 mg/l NaCl, 20 mg/l, and 20 V, respectively. A higher pH at higher applied voltage (20 or 30 V) enhanced the precipitation of indium (III) ion as insoluble indium hydroxide, which improved the removal efficiency. Results from the indium (III) ion removal kinetics show that the kinetics data fit the pseudo second-order kinetic model well. Finally, the composition of the sludge produced was characterized with energy dispersion spectra (EDS).

Determination of indium(III) with 3,4,5,6-tetrachlorogallein and cetylpyridinium chloride

International Nuclear Information System (INIS)

Mori, Itsuo; Fujita, Yoshikazu; Ida, Masako; Enoki, Takehisa

1976-01-01

Rapid and highly sensitive methods have been developed for the spectrophotometric and titrimetric determination of indium(III) with 3,4,5,6-tetrachlorogallein(3,4,5,6-T. Cl, Gal.) and cetylpyridinium chloride(CPC) in aqueous solutions of pH 4.2--5.2. The absorbance of the indium(III)-3,4,5,6-T. Cl. Gal. complex at 620 nm and the color change (pure blue - weak violetish red) were used to indicate the end point in the EDTA titration. The calibration curve for the spectrophotometry was linear in the range 0--45.0 μg In(III)/10 ml. According to Sandell's expression, the sensitivity was 0.0032 μg In(III)/cm 2 for an absorbance of 0.001. To the solution containing less than 45.0 μg of indium(III), 2.0 ml of 1.0x10 -2 M CPC solution, 3.0 ml of Walpole buffer solution(pH 4.4; acetic acid-sodium acetate), and 2.0 ml of 1.0x10 -3 M 3,4,5,6-T.Cl.Gal. methanol solution were added and the volume was made up to 10.0 ml with water. The solution was kept at (20--25) 0 C for 30 minutes and then the absorbance was measured at 620 nm against the reagent blank. The mole ratio of indium(III), 3,4,5,6-T.Cl.Gal. and CPC in the complex was estimated to be 1 : 2 : 2 by the continuous variation and the mole ratio methods. (auth.)

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

Energy Technology Data Exchange (ETDEWEB)

Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

2014-09-15

The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

Indium 111 WBC scan in local and systemic fungal infections

International Nuclear Information System (INIS)

Haseman, M.K.; Blake, K.; McDougall, I.R.

1984-01-01

We describe two patients-one with a systemic fungal infection and one with a localized form-who had strikingly abnormal indium 111 leukocyte (WBC) scans. The patient with systemic disease had an abnormal WBC scan before lesions became clinically apparent

Efficient Indium-Mediated Dehalogenation of Aromatics in Ionic Liquid Media

Directory of Open Access Journals (Sweden)

Flavia C. Zacconi

2012-12-01

Full Text Available An efficient indium-mediated dehalogenation reaction of haloaromatics and haloheteroaromatics in ionic liquids has been studied. This method is simple and effective in the presence of [bmim]Br. Furthermore, this methodology is environmentally friendly compared with conventional ones.

Current status of indium-111 labeled bleomycin for tumor detection

International Nuclear Information System (INIS)

Taylor, R.D.; Blahd, W.H.

1975-01-01

The advantages and disadvantages of 111 In-labeled bleomycin for tumor detection are briefly mentioned. Indium-111 labeled bleomycin does localize in human tumors. However, its role in tumor detection and staging as compared with 67 Ga is still somewhat controversial

In{sub 6}Se{sub 7} thin films by heating thermally evaporated indium and chemical bath deposited selenium multilayers

Energy Technology Data Exchange (ETDEWEB)

Ornelas, R.E.; Avellaneda, D. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Shaji, S. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico); Castillo, G.A.; Roy, T.K. Das [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico)

2012-05-15

Indium selenide (In{sub 6}Se{sub 7}) thin films were prepared via selenization of thermally evaporated indium thin films by dipping in sodium selenosulphate solution followed by annealing in nitrogen atmosphere. First, indium was thermally evaporated on glass substrate. Then, the indium coated glass substrates were dipped in a solution containing 80 ml 0.125 M sodium selenosulphate and 1.5 ml dilute acetic acid (25%) for 5 min. Glass/In-Se layers were annealed at 200-400 Degree-Sign C in nitrogen atmosphere (0.1 Torr) for 30 min. X-ray diffraction studies showed the formation of monoclinic In{sub 6}Se{sub 7}. Morphology of the thin films formed at different conditions was analyzed using Scanning electron microscopy. The elemental analysis was done using Energy dispersive X-ray detection. Electrical conductivity under dark and illumination conditions was evaluated. Optical band gap was computed using transmittance and reflectance spectra. The band gap value was in the range 1.8-2.6 eV corresponding to a direct allowed transition. We studied the effect of indium layer thickness and selenium deposition time on the structure, electrical and optical properties of In{sub 6}Se{sub 7} thin films.

13 CFR 127.303 - How will SBA select and identify approved certifiers?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false How will SBA select and identify approved certifiers? 127.303 Section 127.303 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Certification of EDWOSB or WOSB Status...

(111)Indium Labelling of Recombinant Activated Coagulation Factor VII

DEFF Research Database (Denmark)

Nalla, Amarnadh; Buch, Inge; Sigvardt, Maibritt

2012-01-01

The aim of this study is to investigate whether (111)Indium-labelled recombinant FVIIa (rFVIIa) could be a potential radiopharmaceutical for localization of bleeding sources. DTPA-conjugated rFVIIa was radiolabelled with (111)In chloride. In vitro binding efficiency of (111)In-DTPA-rFVIIa to F1A2...

The value of gamma camera and computed tomography data set coregistration to assess Lewis Y antigen targeting in small cell lung cancer by 111Indium-labeled humanized monoclonal antibody 3S193

International Nuclear Information System (INIS)

Quaia, Emilio; Krug, Lee M.; Pandit-Taskar, Neeta; Nagel, Andrew; Reuter, Victor E.; Humm, John; Divgi, Chaitanya

2008-01-01

Aim: To assess the value of data set coregistration of gamma camera and computed tomography (CT) in the assessment of targeting of humanized monoclonal antibody 3S193 labeled with indium-111 ( 111 In-hu3S193) to small cell lung cancer (SCLC). Methods and materials: Ten patients (6 male and 4 female; mean age ± S.D., 60 ± 4 years), from an overall population of 20 patients with SCLCs expressing Lewis Y antigen at immunohistochemical analysis, completed a four weekly injections of 111 In-hu3S193 and underwent gamma camera imaging. All had had, as part of their baseline evaluation, Fluorine18 fluoro-2-deoxyglucose (FDG) positron emission tomography/computed tomography (PET/CT). Two readers in consensus retrospectively coregistered the gamma camera images with the CT component of the FDG PET/CT by automatic or manual alignment. The resulting image sets were visually examined and SCLC lesions targeting at coregistered gamma camera and CT was correlated side-by-side with the 18 F-FDG uptake. Results: A total number of 31 lesions from SCLC with a thoracic (n = 13) or extrathoracic location (n = 18) were all positive on FDG PET/CT. Coregistration of the gamma camera to the CT demonstrated targeting of antibody to all lesions >2 cm (n = 20) and in a few lesions ≤2 cm (n = 2), with no visualization of most lesions ≤2 cm (n = 9). No 111 In-hu3S193 uptake in normal tissues was observed. Conclusion: Coregistration of antibody gamma camera imaging to FDG PET/CT is feasible and allows valuable assessment of 111 In-hu3S193 antibody targeting to SCLC lesions >2 cm, while lesions ≤2 cm reveal a limited targeting

33 CFR 127.1315 - Preliminary transfer inspection.

Science.gov (United States)

2010-07-01

... (CONTINUED) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Hazardous Gas Operations § 127.1315 Preliminary... capacity of each storage tank to or from which LHG will be transferred, to ensure that it is safe for...

Chemical speciation analysis and environmental behaviour of 127I and 12

International Nuclear Information System (INIS)

Hansen, Violeta

2011-10-01

Chemical speciation analysis of 129 I and 127 I as iodide, iodate and total inorganic iodine in seawater samples from the Baltic Proper, Skagerrak and Kattegat has been carried out. The important findings of this study are that the reduction of iodate and oxidation of iodide in Skagerrak and Kattegat may be a slow process while along the Baltic Sea surface water reduction of iodate is a relatively fast process. Although suboxic or anoxic condition are encountered in some of the Baltic Sea deep basins, the concentration of 129 IO 3 - increases with water depth indicating that the reduction of iodate in the oxygen deficient bottom water of the Baltic Sea is a slow process. Iodine chemical speciation analysis (as iodide, iodate and total iodine including inorganic and organic iodine species) in lake water samples collected from Denmark and southern Sweden has been carried out. Destruction of organic iodine was performed by alkaline oxidation using NaOH - NaClO at 100 deg. C and anion exchange chromatography was used for separation of iodide and iodate. Iodine-129 concentrations in the lakes ranged from 1.3 - 12.8 x10 9 at/L and show elevated concentrations in lakes located in southwest Jutland (Denmark), near the North Sea. Except the Skaersoe Lake, were the organic iodine - 127 accounts for 50% of the total iodine, iodide (both 129 I and 127 I) is the predominant species form in surface water of the studied lakes. An investigation was conducted in order to quantify the total aquatic iodine ( 129 I and 127 I as inorganic and organic iodine) from fresh water and seawater samples by adsorption onto activated charcoal and DEAE 32 cellulose followed by alkaline digestion or combustion. The results show that iodide from freshwater samples can easily be adsorbed onto activated charcoal. The sorption was not affected by the pH. The absorption capacity of iodate is low and reduces quickly when its concentration increases. Compared with activated charcoal, DEAE 32 cellulose

Synthesis and biologic studies of iodinated ({sup 125}I/{sup 127}I) ethidium

Energy Technology Data Exchange (ETDEWEB)

Ho Nanhui; Tumeh, Paul C.; Kassis, Amin I. E-mail: amin_kassis@hms.harvard.edu

2001-11-01

An iodinated ({sup 125}I/{sup 127}I) ethidium derivative (3,8-diamino-5-[6'-(p-iodobenzoylamino)-4'-azahexyl]-6 -phenylphenanthridinium chloride hydrochloride) was synthesized and characterized. The labeling yield of the {sup 125}I-labeled derivative was 75% for carrier-free {sup 125}I, with a radiochemical purity of 95%. The incubation of iodoethidium with calf thymus DNA resulted in a substantial enhancement of fluorescence yield, indicating the intercalation of this compound into DNA. In the presence of iodoethidium, the nuclei of methanol-treated mammalian cells fluoresced, while those of viable cells did not (since the plasma membrane is impermeable to iodoethidium). When viable cells were incubated with the reduced form of the derivative, {sup 125}I/{sup 127}I-dihydroethidium traversed the plasma membrane, was oxidized in the cytoplasm, and intercalated into nuclear DNA. Finally, we tested the hypothesis that larger malignant solid tumors, containing a relatively greater percentage of degenerating permeable cells, can be targeted with {sup 125}I-ethidium. In-vivo studies demonstrated a small but positive correlation (R = 0.72) between tumor volume and the uptake of the derivative. Because of the ubiquitous presence of abnormal permeable cells and necrosis in tumors, our results support the belief that radiolabeled DNA-intercalating or DNA-binding molecules may be of diagnostic and therapeutic value for a variety of solid tumors in humans.

13 CFR 127.102 - What are the definitions of the terms used in this part?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What are the definitions of the terms used in this part? 127.102 Section 127.102 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES General Provisions § 127.102...

13 CFR 127.404 - What happens if SBA is unable to verify a concern's eligibility?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What happens if SBA is unable to verify a concern's eligibility? 127.404 Section 127.404 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Eligibility Examinations § 127...

Electrical properties of vacuum-annealed titanium-doped indium oxide films

NARCIS (Netherlands)

Yan, L.T.; Rath, J.K.; Schropp, R.E.I.

2011-01-01

Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited

33 CFR 127.103 - Piers and wharves.

Science.gov (United States)

2010-07-01

...) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas § 127.103 Piers and wharves. (a) If the waterfront... not less than two hours. (c) LNG or LPG storage tanks must have the minimum volume necessary for— (1...

Compton scattering studies of the electron momentum distribution in indium phosphide

CERN Document Server

Deb, A; Guin, R; Chatterjee, A K

1999-01-01

The electron momentum anisotropy of indium phosphide has been studied by measuring the directional Compton profiles of indium phosphide single crystals with the use of radiation from an sup 2 sup 4 sup 1 Am gamma source. Three different samples, cut along the [100], [110] and [111] planes, were used. The experimental anisotropy has been compared with the results based on the linear combination of Gaussian orbitals (LCGO) method. The agreement is very good with our theoretical results. It is found that the extrema appearing in the dependences on q of the anisotropies have an intimate connection with the bonding properties of the semiconductor. A self-consistent, all-electron, local density calculation for the partial density of states, total density of states and the charge analysis is also presented here.

Radioassay process using an indium-8-hydroxyquinoline

International Nuclear Information System (INIS)

Goedemans, W.T.

1981-01-01

There is disclosed an in vivo radioassay process in which a radioactive chelate of indium and an 8-hydroxyquinoline is introduced into a warmblooded animal having an inflammatory reaction in an area in which the chelate would not accumulate to the same extent if the inflammation were not present. The chelate gathers in the inflamed area, for instance, in a body abscess and its location is determined by radio surveying the body by an external imaging technique. (author)

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

CERN Document Server

Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1992-05-01

Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

International Nuclear Information System (INIS)

Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

Lubrication of soft and hard interfaces with thermo-responsive F127 hydrogel

DEFF Research Database (Denmark)

Røn, Troels; Chronakis, Ioannis S.; Lee, Seunghwan

2014-01-01

of F127-20 also displayed varying lubricating properties, both in the lubricating mechanism and efficacy, as a function of temperature, speed and tribopairs. F127-20 was most effective in lubricating a soft interface (PDMSePDMS) based on its gel-forming properties in 22.5-60 °C and feasible formation...

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

Energy Technology Data Exchange (ETDEWEB)

Sallis, Shawn; Williams, Deborah S. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Quackenbush, Nicholas F.; Senger, Mikell [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States); Woicik, Joseph C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 (United States); White, Bruce E.; Piper, Louis F.J. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States)

2015-07-15

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In{sup +} lone pair active electrons as the origin of the deep subgap features. No In{sup +} species are observed, only In{sup 0} nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Physical properties of pyrolytically sprayed tin-doped indium oxide coatings

NARCIS (Netherlands)

Haitjema, H.; Elich, J.J.P.

1991-01-01

The optical and electrical properties of tin-doped indium oxide coatings obviously depend on a number of production parameters. This dependence has been studied to obtain a more general insight into the relationships between the various coating properties. The coatings have been produced by spray

27 CFR 478.127 - Discontinuance of business.

Science.gov (United States)

2010-04-01

... business was located: Provided, however, Where State law or local ordinance requires the delivery of... 27 Alcohol, Tobacco Products and Firearms 3 2010-04-01 2010-04-01 false Discontinuance of business... Records § 478.127 Discontinuance of business. Where a licensed business is discontinued and succeeded by a...

Migration and inventories of iodine-129 and iodine-127 in soils; Migration und Inventare von Iod-129 und Iod-127 in Boeden

Energy Technology Data Exchange (ETDEWEB)

Daraoui, A.; Michel, R.; Gorny, M.; Jakob, D.; Sachse, R. [Leibniz Univ. Hannover (Germany). Zentrum fuer Strahlenschutz und Radiooekologie; Alfimov, V.; Synal, H.A. [Eidgenoessische Technische Hochschule (ETH), Zuerich (Switzerland)

2009-07-01

Soil profiles from Bavaria in southern Germany and from Chile were analysed for {sup 129}I by accelerator mass spectrometry (AMS) and for {sup 127}I by inductively coupled plasma mass spectrometry (ICP-MS). The deposition density of {sup 129}I in the soils from Bavaria was (109 x 1.5{sup {+-}}{sup 1}) mBq m{sup -2} (geometric mean and geometric standard deviation). The dominant sources of {sup 129}I in Bavaria are the reprocessing plants La Hague and Sellafield and not the Chernobyl fallout. The {sup 129}I/{sup 127}I isotopic ratios of the Bavarian soils were measured between 10{sup -7} and 10{sup -10}, 100- to 1000-time higher than the ratios observed for the samples from Chile. The {sup 129}I integral deposition densities in Chile, Easter Island and Antarctica were between 0.3 and 2 mBq m{sup -2}. In these soils, the observed {sup 129}I/{sup 127}I ratios were about 10{sup -12}. This value is consistent with the results from the marine sediments representing the pre-nuclear equilibrium ratios. The soils from Chile allow the determination of the {sup 129}I fallout from the atmospheric nuclear weapons explosions undisturbed from contaminations due to releases from reprocessing plants. (orig.)

Growth and shape of indium islands on molybdenum at micro-roughened spots created by femtosecond laser pulses

Science.gov (United States)

Ringleb, F.; Eylers, K.; Teubner, Th.; Schramm, H.-P.; Symietz, C.; Bonse, J.; Andree, S.; Heidmann, B.; Schmid, M.; Krüger, J.; Boeck, T.

2017-10-01

Indium islands on molybdenum coated glass can be grown in ordered arrays by surface structuring using a femtosecond laser. The effect of varying the molybdenum coated glass substrate temperature and the indium deposition rate on island areal density, volume and geometry is investigated and evaluated in a physical vapor deposition (PVD) process. The joined impact of growth conditions and spacing of the femtosecond laser structured spots on the arrangement and morphology of indium islands is demonstrated. The results yield a deeper understanding of the island growth and its precise adjustment to industrial requirements, which is indispensable for a technological application of such structures at a high throughput, for instance as precursors for the preparation of Cu(In,Ga)Se2 micro concentrator solar cells.

Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

International Nuclear Information System (INIS)

Lee, Hyun-Jun; Song, Pung-Keun

2014-01-01

Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

Composition dependence of the thermodynamic activity and lattice parameter of zeta nickel-indium

International Nuclear Information System (INIS)

Bhattacharya, B.; Masson, D.B.

1976-01-01

The vapor pressure of indium over six alloys in the zeta phase of the nickel-indium system was measured by the method of atomic absorption. Values of thermodynamic activity were calculated from the vapor pressure, and partial heat and entropy of indium were calculated from the temperature coefficients. The lattice parameters of the hexagonal B8 2 unit cell of all alloys were calculated from X-ray diffraction powder patterns. It was found that the a lattice parameter passed through a minimum at the same composition that the excess chemical potential showed a sharp change of slope, when graphed as a function of composition. These effects were similar to those observed previously which have been attributed to overlap by the Fermi surface of a Brillouin zone face. In the present case they were attributed to overlap of the Fermi surface across faces tentatively identified as the [110] faces of the Brillouin zone of the B8 2 structure. The influence of substitutional disorder was also considered as a cause of the thermodynamic effects, but this was rejected because it does not explain the minimum in lattice parameter. (Auth.)

Perturbed angular correlation study of the ion exchange of indium into silicalite zeolites

International Nuclear Information System (INIS)

Ramallo-Lopez, J.M.; Requejo, F.G.; Renteria, M.; Bibiloni, A.G.; Miro, E.E.

1999-01-01

Two indium-containing silicalite zeolites (In/H-ZSM5) catalysts prepared by wet impregnation and ionic exchange were characterized by the Perturbed Angular Correlation (PAC) technique using 111 In as probe to determine the nature of the indium species. Some of these species take part in the catalytic reaction of the selective reduction (SCR) of NO x with methane. PAC experiments were performed at 500 deg. C in air before and after reduction-reoxidation treatments on the catalysts in order to determine the origin of the different hyperfine interactions and then the degree of ionic exchange. Complementary catalytic activity characterizations were also performed.PAC experiments performed on the catalyst obtained by wet impregnation showed that all In-atoms form In 2 O 3 crystallites while almost 70% of In-atoms form In 2 O 3 in the catalyst obtained by ionic exchange. The PAC experiments of both catalysts performed after the reduction-reoxidation treatment revealed the presence of two hyperfine interactions, different from those corresponding to indium in In 2 O 3 . These hyperfine interactions should be associated to disperse In species responsible of the catalytic activity located in the ionic exchange-sites of the zeolites

Efficient and Selective Debromination of vic-Dibromides to Alkenes Using CoCl2·6H2O/Indium System

International Nuclear Information System (INIS)

Yoo, Byung Woo; Kim, Seo Hee; Min, Ga Hong

2012-01-01

We have found that vic-dibromides treated with CoCl 2 ·6H 2 O/indium system in methanol are efficiently converted into the corresponding alkenes in high yields under mild conditions. Although the scope and limitations of this method have not been fully established, it is expected to be a useful and efficient alternative to the existing methods for the debromination of vic-dibromides. There is always considerable interest in the search for more efficient and selective procedures for the debromination of vic-dibromides. The reduction of CoCl 2 to low-valent cobalt species and the synthetic utility of such species are well documented in the literature. Generally, reducing agents, such as zinc and magnesium, are used for the reduction of CoCl 2 . Because indium and zinc closely resemble each other in several aspects, including first ionization, we considered that a combination of CoCl 2 ·6H 2 O with indium could facilitate the reductive debromination of vic-dibromides under mild conditions. As in the case of zinc, the reduction potential of indium is not highly negative (In: E o , In +3 /In = -0.345 V; Zn: E o , Zn: +2 /Zn = -0.763 V): thus, indium is not sensitive to water and does not form oxides readily in air. In recent years, indium metal has been the subject of active interest because of its unique properties such as low toxicity and high stability in water and air compared to other metals. In connection with our interest in exploring the utility of low-valent metal reagents for organic transformations, we herein wish to report an efficient and chemoselective method for the debromination of vic-dibromides to alkenes using CoCl 2 ·6H 2 O/indium system at room temperature

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

Energy Technology Data Exchange (ETDEWEB)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

INDIUM AND ZINC MEDIATED ONE-ATOM CARBOCYCLE ENLARGEMENT IN WATER. (R822668)

Science.gov (United States)

AbstractSix-, seven-, eight-membered rings are enlarged by one carbon-atom into seven-, eight- and nine-membered ring derivatives respectively, via indium or zinc mediated reactions in aqueous medium.

Clinical evaluation of the platelet scintigraphy using indium-111 oxine

International Nuclear Information System (INIS)

Ishikawa, Nobuyoshi; Takeda, Tohoru; Nakajima, Kohtaroh; Satoh, Motohiro; Akisada, Masayoshi; Ijima, Hiroshi

1988-01-01

The clinical usefulness of autologous platelets labeled with Indium-111 oxine was evaluated by scintigraphy as a diagnostic procedure for the detection of various thrombotic disorders as well as in different aneurysms. The positivity was found to be satisfactory (80.0 %) in cases of aortic aneurysm while thoracic aneurysm showed comparatively poor accumulation. High positivity was also demonstrated in deep vein thrombosis. The complimentary role of this method for intracardiac thrombi to echocardiography was noted. The labeling procedure of indium-111 oxine was fairly easy to perform and the activity of labeled platelets was sustained enough to yield good results. In one case scintigraphy was performed successfully after 19 hours of angiography when a hot area of labeled platelets was seen at the puncture site. This method was therefore varified to be a sensitive and reliable method in the assessment of thrombus activity, and as it demonstrates the activity, its helpfulness in the conservative treatment of these disorders is warranted. (author)

Diagnostic compositions containing a chelate of radioactive indium and 8-hydroxyquinoline

International Nuclear Information System (INIS)

Goedemans, W.T.

1981-01-01

There are disclosed aqueous, radioassaying solutions of a chelate of radioactive indium and an 8-hydroxyquinoline, having an essential absence of an organic solvent, e.g., alcohol or chloroform. The solutions are useful in radioassaying warmblooded animals. (author)

Silver-indium-cadmium control rod behaviour during a severe reactor accident

International Nuclear Information System (INIS)

Bowsher, B.R.; Jenkins, R.A.; Nichols, A.L.; Rowe, N.A.; Simpson, J.A.H.

1986-04-01

An alloy of silver, indium and cadmium is commonly used as control rod material in pressurised water reactors (PWRs). The behaviour of this alloy has been studied in a series of experiments using an induction furnace to achieve temperatures up to 1900K. The aerosols released from overheated clad and unclad control rod samples have been characterised in both steam and inert atmospheres. Mass balance experiments have been undertaken to determine the distribution of the control rod alloy constituents following rupture of the cladding, and this work has been supported by thermogravimetric studies of silver-indium mixtures. Metallographic studies were also undertaken to assess the failure mode of the stainless steel cladding and the interaction of the molten alloy with Zircaloy. The results of this work are discussed in terms of aerosol/vapour behaviour during severe reactor accidents. (author)

Related electrical, superconducting and structural characteristics of low temperature indium films

International Nuclear Information System (INIS)

Belevtsev, B.I.; Pilipenko, V.V.; Yatsuk, L.Ya.

1981-01-01

Reported are results of a complex study of electrical, superconducting and structural properties of indium films vacuum evaporated onto a liquid helium-cooled substrate. Structural electron diffraction investigations gave a better insight into the general features of the annealing during the warming-up of cold-deposited films. It is found that the annealing of indium films to about 80 to 100 K entails an irreversible growth of interplanar separations due to decreasing inhomogeneous microstresses. As the films are warmed from 100 to 300 K, the principal annealing processes are determined by crystallite growth and development of dominating orientation. The changes in the residual resistance and in Tsub(c) with warming the cold-deported films are explained on the base of structural data obtained. In particular, a direct relationship is revealed between the crystallite size and Tsub(c) [ru

How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

Science.gov (United States)

Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

2010-05-01

Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

Surface characterization of sol–gel derived indium tin oxide films on ...

Indian Academy of Sciences (India)

Unknown

, India ... 1. Introduction. Indium tin oxide (ITO) coating on glass is an important item in the field ..... In addition, contamination of carbon from environment cannot be ruled ..... processing of ceramics, glasses and composites (eds) L L. Hench and ...

Growth and Characterization of Indium Doped ZnO Nano wires Using Thermal Evaporation Method

International Nuclear Information System (INIS)

Abrar Ismardi; Dee, C.F.; Majlis, B.Y.

2011-01-01

Indium doped ZnO nano wires were grown on silicon substrate using vapor thermal deposition method without using any catalyst. Morphological structures were extensively investigated using field emission scanning electron microscopy (FESEM) and show that the nano wires have uniformly hexagonal nano structures with diameters less than 100 nm and lengths from one to a few microns. The sample was measured for elemental composition with energy dispersive X-ray (EDX) spectroscopy, Zn, In and O elements were found on the sample. XRD spectrum of indium doped ZnO nano wires revealed that the nano wires have a high crystalline structure. (author)

Aberrant epigenetic reprogramming of imprinted microRNA-127 and Rtl1 in cloned mouse embryos

International Nuclear Information System (INIS)

Cui Xiangshun; Zhang Dingxiao; Ko, Yoeung-Gyu; Kim, Nam-Hyung

2009-01-01

The microRNA (miRNA) genes mir-127 and mir-136 are located near two CpG islands in the imprinted mouse retrotransposon-like gene Rtl1, a key gene involved in placenta formation. These miRNAs appear to be involved in regulating the imprinting of Rtl1. To obtain insights into the epigenetic reprogramming of cloned embryos, we compared the expression levels of mir-127 and mir-136 in fertilized mouse embryos, parthenotes, androgenotes and cloned embryos developing in vitro. We also examined the DNA methylation status of the promoter regions of Rtl1 and mir-127 in these embryos. Our data showed that mir-127 and mir-136 were highly expressed in parthenotes, but rarely expressed in androgenotes. Interestingly, the expression levels of mir-127 and mir-136 in parthenotes were almost twice that seen in the fertilized embryos, but were much lower in the cloned embryos. The Rtl1 promoter region was hyper-methylated in blastocyst stage parthenotes (75.0%), moderately methylated (32.4%) in the fertilized embryos and methylated to a much lower extent (∼10%) in the cloned embryos. Conversely, the promoter region of mir-127 was hypo-methylated in parthenogenetically activated embryos (0.4%), moderately methylated (30.0%) in fertilized embryos and heavily methylated in cloned blastocysts (63-70%). These data support a role for mir-127 and mir-136 in the epigenetic reprogramming of the Rtl1 imprinting process. Analysis of the aberrant epigenetic reprogramming of mir-127 and Rtl1 in cloned embryos may help to explain the nuclear reprogramming procedures that occur in donor cells following somatic cell nuclear transfer (SCNT).

26 CFR 1.127-1 - Amounts received under a qualified educational assistance program.

Science.gov (United States)

2010-04-01

... employee under a qualified educational assistance program described in § 1.127-2, or (2) The value of... Income § 1.127-1 Amounts received under a qualified educational assistance program. (a) Exclusion from.... (c) Amounts received under a nonqualified program. Any amount received under an educational...

On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

International Nuclear Information System (INIS)

Chuang, M.J.; Huang, H.F.; Wen, C.H.; Chu, A.K.

2010-01-01

Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 o C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.

Chemical speciation analysis and environmental behaviour of 127I and 129I

Energy Technology Data Exchange (ETDEWEB)

Hansen, Violeta

2011-10-15

Chemical speciation analysis of 129I and 127I as iodide, iodate and total inorganic iodine in seawater samples from the Baltic Proper, Skagerrak and Kattegat has been carried out. The important findings of this study are that the reduction of iodate and oxidation of iodide in Skagerrak and Kattegat may be a slow process while along the Baltic Sea surface water reduction of iodate is a relatively fast process. Although suboxic or anoxic condition are encountered in some of the Baltic Sea deep basins, the concentration of 129IO{sub 3}- increases with water depth indicating that the reduction of iodate in the oxygen deficient bottom water of the Baltic Sea is a slow process. Iodine chemical speciation analysis (as iodide, iodate and total iodine including inorganic and organic iodine species) in lake water samples collected from Denmark and southern Sweden has been carried out. Destruction of organic iodine was performed by alkaline oxidation using NaOH - NaClO at 100 deg. C and anion exchange chromatography was used for separation of iodide and iodate. Iodine-129 concentrations in the lakes ranged from 1.3 - 12.8 x109 at/L and show elevated concentrations in lakes located in southwest Jutland (Denmark), near the North Sea. Except the Skaersoe Lake, were the organic iodine - 127 accounts for 50% of the total iodine, iodide (both 129I and 127I) is the predominant species form in surface water of the studied lakes. An investigation was conducted in order to quantify the total aquatic iodine (129I and 127I as inorganic and organic iodine) from fresh water and seawater samples by adsorption onto activated charcoal and DEAE 32 cellulose followed by alkaline digestion or combustion. The results show that iodide from freshwater samples can easily be adsorbed onto activated charcoal. The sorption was not affected by the pH. The absorption capacity of iodate is low and reduces quickly when its concentration increases. Compared with activated charcoal, DEAE 32 cellulose showed

Stopping characteristics of boron and indium ions in silicon

Energy Technology Data Exchange (ETDEWEB)

Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A. [National Research Nuclear University MEPhI (Russian Federation)

2016-12-15

The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

13 CFR 127.602 - What are the grounds for filing an EDWOSB or WOSB status protest?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What are the grounds for filing an EDWOSB or WOSB status protest? 127.602 Section 127.602 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Protests § 127.602 What are the...

A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH{sub 2}{sup +} ions implanted-indium tin oxide substrate

Energy Technology Data Exchange (ETDEWEB)

Liu Chenyao; Jiao Jiao; Chen Qunxia [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Xia Ji [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Shuoqi [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Hu Jingbo, E-mail: hujingbo@bnu.edu.c [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Li Qilong [College of Chemistry, Beijing Normal University, Beijing 100875 (China)

2010-12-01

A new type of gold nanoparticle attached to a NH{sub 2}{sup +} ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH{sub 2}/indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10{sup 15} ions/cm{sup 2}. The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH{sub 2}{sup +} ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

Indium oxide thin film based ammonia gas and ethanol vapour sensor

Indian Academy of Sciences (India)

Unknown

acetone and dried under an electric lamp (100 W). Thin films of indium oxide ... A λ-19, UV–VIS Spectrophotometer (Perkin Elmer, USA) was used for measuring .... tion of ammonia is observed through glowing of LED. LM3914, LED driver is ...

(Indium, Aluminum) co-doped Zinc Oxide as a Novel Material System for Quantum-Well Multilayer Thermoelectrics

Science.gov (United States)

Teehan, Sean

Waste heat recovery from low efficiency industrial processes requires high performance thermoelectric materials to meet challenging requirements. The efficiency such a device is quantified by the dimensionless figure of merit ZT=S2sigmaT/kappa, where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature and kappa is the thermal conductivity. For practical applications these devices are only cost-effective if the ZT is higher than 2. Theoretically it has been proven that by engineering nanostructures with lower dimensionality one can significantly increase ZT. A superlattice, or a system of 2-dimensional multilayer quantum wells has previously shown the potential to be used for thermoelectric structures. However, the use of conventional materials within these structures has only allowed this at low temperatures and has utilized cross-plane transport. This study focuses on both high temperature range operation and the in-plane transport properties of such structures, which benefit from both quantum confinement and an enhancement in density of states near EF. The n-type structures are fabricated by alternately sputtering barrier and well materials of Al-doped ZnO (AZO) and indium co-doped AZO, respectively. Samples investigated consist of 50 periods with targeted layer thicknesses of 10nm, which results in sufficient sampling material as well as quantum well effects. The indium doping level within the quantum well was controlled by varying the target power, and ultimately results in a 3x improvement in power factor (S 2sigma) over the parent bulk materials. The film characterization was determined by X-ray reflectometry, transmission electron microscopy, X-ray diffraction, auger electron spectroscopy, as well as other relevant techniques. In addition, process optimization was performed on material parameters such as layer thickness, interface roughness, and band-gap offset which all play a major role in determining the

Perturbed angular correlation study of the ion exchange of indium into silicalite zeolites

Energy Technology Data Exchange (ETDEWEB)

Ramallo-Lopez, J.M., E-mail: requejo@venus.fisica.unlp.edu.ar; Requejo, F.G., E-mail: requejo@venus.fisica.unlp.edu.ar; Renteria, M., E-mail: requejo@venus.fisica.unlp.edu.ar; Bibiloni, A.G. [UNLP, Programa TENAES (CONICET) and Departamento de Fisica, Faculdad Cs Ex (Argentina)], E-mail: requejo@venus.fisica.unlp.edu.ar; Miro, E.E. [UNL, INCAPE (CONICET) and Faculdad Ing. Quimica (Argentina)

1999-09-15

Two indium-containing silicalite zeolites (In/H-ZSM5) catalysts prepared by wet impregnation and ionic exchange were characterized by the Perturbed Angular Correlation (PAC) technique using {sup 111}In as probe to determine the nature of the indium species. Some of these species take part in the catalytic reaction of the selective reduction (SCR) of NO{sub x} with methane. PAC experiments were performed at 500 deg. C in air before and after reduction-reoxidation treatments on the catalysts in order to determine the origin of the different hyperfine interactions and then the degree of ionic exchange. Complementary catalytic activity characterizations were also performed.PAC experiments performed on the catalyst obtained by wet impregnation showed that all In-atoms form In{sub 2}O{sub 3} crystallites while almost 70% of In-atoms form In{sub 2}O{sub 3} in the catalyst obtained by ionic exchange. The PAC experiments of both catalysts performed after the reduction-reoxidation treatment revealed the presence of two hyperfine interactions, different from those corresponding to indium in In{sub 2}O{sub 3}. These hyperfine interactions should be associated to disperse In species responsible of the catalytic activity located in the ionic exchange-sites of the zeolites.

Diagnosis of deep vein thrombosis using autologous indium-III-labelled platelets

International Nuclear Information System (INIS)

Fenech, A.; Hussey, J.K.; Smith, F.W.; Dendy, P.P.; Bennett, B.; Douglas, A.S.

1981-01-01

Forty-eight patients who had undergone surgical reduction of a fractured neck of femur or in whom deep vein thrombosis was suspected clinically were studied by ascending phlebography and imaging after injection of autologous indium-III-labelled platelets to assess the accuracy and value of the radioisotopic technique in diagnosing deep vein thrombosis. Imaging was performed with a wide-field gammacamera linked with data display facilities. Phlebography showed thrombi in 26 out of 54 limbs examined and a thrombus in the inferior vena cava of one patient; imaging the labelled platelets showed the thrombi in 24 of the 26 limbs and the thrombus in the inferior vena cava. The accumulation of indium-III at sites corresponding to those at which venous thrombi have been shown phlebographically indicates that this radioisotopic technique is a useful addition to methods already available for the detection of deep vein thrombosis. (author)

Diagnosis of deep vein thrombosis using autologous indium-III-labelled platelets

Energy Technology Data Exchange (ETDEWEB)

Fenech, A.; Hussey, J.K.; Smith, F.W.; Dendy, P.P.; Bennett, B.; Douglas, A.S. (Aberdeen Univ. (UK))

1981-03-28

Forty-eight patients who had undergone surgical reduction of a fractured neck of femur or in whom deep vein thrombosis was suspected clinically were studied by ascending phlebography and imaging after injection of autologous indium-III-labelled platelets to assess the accuracy and value of the radioisotopic technique in diagnosing deep vein thrombosis. Imaging was performed with a wide-field gamma camera linked with data display facilities. Phlebography showed thrombi in 26 out of 54 limbs examined and a thrombus in the inferior vena cava of one patient; imaging the labelled platelets showed the thrombi in 24 of the 26 limbs and the thrombus in the inferior vena cava. The accumulation of indium-III at sites corresponding to those at which venous thrombi have been shown phlebographically indicates that this radioisotopic technique is a useful addition to methods already available for the detection of deep vein thrombosis.

Growth and characterization of indium tin oxide thin films deposited on PET substrates

International Nuclear Information System (INIS)

Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

2008-01-01

Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

2011-01-01

Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

21 CFR 131.127 - Nonfat dry milk fortified with vitamins A and D.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Nonfat dry milk fortified with vitamins A and D. 131.127 Section 131.127 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION MILK AND CREAM Requirements for Specific Standardized Milk...

Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pan, Ko-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, Liang-Da [Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China); Chang, Li-Wei [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China)

2013-05-15

Indium oxide (In{sub 2}O{sub 3}) nanorods, nanotowers and tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods have been fabricated by thermal evaporation. The morphology, microstructure and chemical composition of these three nanoproducts are characterized by FE-SEM, HRTEM and XPS. To further investigate the optoelectronic properties, the I–V curves and cathodoluminescence (CL) spectra are measured. The electrical resistivity of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods are 1.32 kΩ, 0.65 kΩ and 0.063 kΩ, respectively. CL spectra of these three nanoproducts clearly indicate that tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods cause a blue shift. No doubt ITO nanorods obtain the highest performance among these three nanoproducts, and this also means that Sn-doped In{sub 2}O{sub 3} nanostructures would be the best way to enhance the optoelectronic properties. Additionally, the growing mechanism and the optoelectronic properties of these three nanostructures are discussed. This study is beneficial to the applications of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods in optoelectronic nanodevices.

Indium 111 scintigraphy in the exploration of the erythropoietic marrow (relative to 42 observations)

International Nuclear Information System (INIS)

Guerin, G.C.R.

1976-01-01

The bone marrow is difficult to explore as a whole because of its wide non-uniform distribution, variable with the hematopoietic and supporting tissue sites. 111 indium-transferrine bone marrow scintigraphy is a new technique which partly overcomes these difficulties and gives an idea of the overall distribution and richness of the erythropoietic marrow, thus showing up the erythropoiesis sites at a given moment. The properties of indium as medullary tracer are bound up with the characteristics of its metabolism which, to some extent at least resembles that of iron. The two main features are: - its fixation on transferrine (or siderophiline); - its binding to reticulocytes. Moreover indium 111 fulfils the physico-chemical criteria necessary for scintigraphic practice (long half-life, emission detectable by conventional scintigraphs, moderate irradiation of the patient). The properties of this radioelement and the technical conditions of use are examined in turn, then scintigraphic data are compared with the results of traditional bone marrow investigations: medullary biopsy and blood cell counts with reticulocyte fraction. This comparison concerns 42 scintigraphs carried out on patients suffering from various hematological diseases, with prospects of serious development in common [fr

Controlling plasmonic properties of epitaxial thin films of indium tin oxide in the near-infrared region

Science.gov (United States)

Kamakura, R.; Fujita, K.; Murai, S.; Tanaka, K.

2015-06-01

Epitaxial thin films of indium tin oxide (ITO) were grown on yttria-stabilized zirconia single-crystal substrates by using a pulsed laser deposition to examine their plasmonic properties. The dielectric function of ITO was characterized by spectroscopic ellipsometry. Through the concentration of SnO2 in the target, the carrier concentration in the films was modified, which directly leads to the tuning of the dielectric function in the near-infrared region. Variable-angle reflectance spectroscopy in the Kretschmann geometry shows the dip in the reflection spectrum of p-polarized light corresponding to the excitation of surface plasmon polaritions (SPPs) in the near-infrared region. The excitation wavelength of the SPPs was shifted with changing the dielectric functions of ITO, which is reproduced by the calculation using transfer matrix method.

Ternary equilibria in bismuth--indium--lead alloys

International Nuclear Information System (INIS)

Liao, K.C.; Johnson, D.L.; Nelson, R.C.

1975-01-01

The liquidus surface is characterized by three binary equilibria. One binary extends from the Pb--Bi peritectic to the Pb--In peritectic. The other two extend from In--Bi eutectics, merge at 50 at. percent Bi and 30 at. percent Pb, and end at the Bi--Pb eutectic. Based on analysis of ternary liquidus contours and vertical sections, it is suggested that solidification for high lead and very high indium alloys occurs from two-phase equilibria. Solidification from all other alloys occurs from three-phase equilibria. Four-phase solidification does not occur in this system

Extraction chromatography of indium (III) on silica gel impregnated with high molecular weight carboxylic acid and its analytical applications

International Nuclear Information System (INIS)

Majumdar, P.S.; Ray, U.S.

1991-01-01

Indium(III) was separated by extraction chromatography with Versatic 10 as a stationary phase on a column of silica gel from acetic acid and sodium acetate solution (pH 4.5-6.0). The optimum condition for extraction was studied based on the critical study of the relevant factors as effects of pH, flow rate on extraction and elution. Role of stripping agents on the elution was studied. The separation of indium from a number of elements was carried out. Indium(III) was separated from Alsup(III), Gasup(III), Tlsup(III), Zrsup(IV) and trivalent lanthanides which interfere under the recommended extraction condition by exploiting the differences in their stripping behaviour. (author). 7 refs., 1 tab., 1 fig

Enhanced photo-catalytic activity of ordered mesoporous indium oxide nanocrystals in the conversion of CO2 into methanol.

Science.gov (United States)

Gondal, M A; Dastageer, M A; Oloore, L E; Baig, U; Rashid, S G

2017-07-03

Ordered mesoporous indium oxide nanocrystal (m-In 2 O 3 ) was synthesized by nanocasting technique, in which highly ordered mesoporous silca (SBA-15) was used as structural matrix. X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) Brunauer-Emmett-Teller (BET) and Barrett-Joyner-Halanda (BJH) studies were carried out on m-In 2 O 3 and the results revealed that this material has a highly ordered mesoporous surface with reduced grain size, increased surface area and surface volume compared to the non porous indium oxide. The diffuse reluctance spectrum exhibited substantially improved light absorption efficiency in m-In 2 O 3 compared to normal indium oxide, however, no considerable change in the band gap energies of these materials was observed. When m-In 2 O 3 was used as a photo-catalyst in the photo-catalytic process of converting carbon dioxide (CO 2 ) into methanol under the pulsed laser radiation of 266-nm wavelengths, an enhanced photo-catalytic activity with the quantum efficiency of 4.5% and conversion efficiency of 46.3% were observed. It was found that the methanol production yield in this chemical process is as high as 485 µlg -1 h -1 after 150 min of irradiation, which is substantially higher than the yields reported in the literature. It is quite clear from the results that the introduction of mesoporosity in indium oxide, and the consequent enhancement of positive attributes required for a photo-catalyst, transformed photo-catalytically weak indium oxide into an effective photo-catalyst for the conversion of CO 2 into methanol.

Changes and clinical significance of CD4+CD25+CD127- regulatory T cells in Graves disease

International Nuclear Information System (INIS)

Zou Jintao; Yu Peiling; Dong Jingwei; Liao Qihong; Liu Dongliang; Zeng Hongyi

2012-01-01

Objective: To investigate the mechanism of Graves disease by observing the changes of CD4 + CD25 + CD127 - regulatory T cells (Treg) population in the patients. Methods: Flow cytometry was used to detect the proportion of CD4 + CD25 + CD127 - Treg of CD4 + T cells in 90 Graves disease patients (Graves disease group) and 50 healthy adults (control group). Thyroid function and autoantibody levels were determined simultaneously. The t test was adopted for comparison between groups. The relationship between CD4 + CD25 + CD127 - Treg and thyroid function was analyzed by linear correlation analysis. Results: The percentages of CD4 + CD25 + CD127 - Treg in Graves disease group and control group were 1.39%±1.09% and 4.59%±1.14% separately. There was significant difference between the two groups (t=16.4, P<0.01). There were negative correlation between CD4 + CD25 + CD127 - Treg percentages and total triiodothyronine, total thyroxine,free triiodothyronine, free thyroxine and thyrotropin receptor antibody,thyroglobulin antibody, thyroid microsomal antibody (r=-0.62, -0.65, -0.56, -0.71, -0.50, -0.15, all P<0.01). Conclusions: The reduction of CD4 + CD25 + CD127 - Treg percentages in Graves disease group and close relations of CD4 + CD25 + CD127 - Treg with thyroid function and thyroid autoantibody levels suggest that CD4 + CD25 + CD127 - Treg decrease in the number may be associated with the onset of Graves disease. CD4 + CD25 + CD127 - may be the specific marker of Treg. (authors)

Quantitative STEM on indium containing group III-V semiconductor nanostructures

International Nuclear Information System (INIS)

Mehrtens, Thorsten

2013-01-01

In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

Recovery of indium ions by nanoscale zero-valent iron

Energy Technology Data Exchange (ETDEWEB)

Chen, Wen; Su, Yiming [Tongji University, State Key Laboratory of Pollution Control and Resources Reuse (China); Wen, Zhipan [Wuhan Institute of Technology, School of Chemistry and Environmental Engineering (China); Zhang, Yalei; Zhou, Xuefei, E-mail: zhouxuefei@tongji.edu.cn; Dai, Chaomeng, E-mail: daichaomeng@tongji.edu.cn [Tongji University, State Key Laboratory of Pollution Control and Resources Reuse (China)

2017-03-15

Indium and its compounds have plenty of industrial applications and high demand. Therefore, indium recovery from various industrial effluents is necessary. It was sequestered by nanoscale zero-valent iron (nZVI) whose size mainly ranged from 50 to 70 nm. Adsorption kinetics and isotherm, influence of pH, and ionic strength were thoroughly investigated. The reaction process was well fitted to a pseudo second-order model, and the maximum adsorption capacity of In(III) was 390 mg In(III)/g nZVI similar to 385 mg In(III)/g nZVI at 298 K calculated by Langmuir model. The mole ratio of Fe(II) released to In(III) immobilized was 3:2, which implied a special chemical process of co-precipitation combined Fe(OH){sub 2} with In(OH){sub 3}. Transmission electron microscopy with an energy-disperse X-ray (TEM-EDX), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were used to characterize surface morphology, corrosion products, and valence state of indium precipitate formed on nanoparticles. The structural evolution changed from core-shell structure of iron oxide to sheet structure of co-precipitation, to sphere structure that hydroxide gradually dissolved as the pH decreased, and to cavity structures for the pH continually decreased. Furthermore, below pH 4.7, the In(III) enrichment was inhibited for the limited capacity of co-precipitation. Also, it was found that Ca{sup 2+} and HPO{sub 4}{sup 2−} have more negative influence on In(III) recovery compared with Na{sup +}, NO{sub 3}{sup −}, HCO{sub 3}{sup −}, and SO{sub 4}{sup 2−}. Therefore, the In(III) recovery can be described by a mechanism which consists of adsorption, co-precipitation, and reduction and was over 78% even after 3 cycles. The results confirmed that it was applicable to employ nZVI for In(III) immobilization.

Jaekaubandus kaotab kaubakadudest 1,27% käibest

Index Scriptorium Estoniae

2006-01-01

Ilmunud ka: Finansovõi Menedzhment : infovõpusk nr. 3 apr. lk. 8. Briti firma The Centre for Retail Research uuring näitas, et Baltimaade suurte jaekaubandusfirmade keskmine kaubakadu 2005. aastal oli 1,27% käibest. Tabel: Euroopa jaekaubafirmade kahjud kadude tõttu (% käibest)

Effect of indium doping on zinc oxide films prepared by chemical ...

Indian Academy of Sciences (India)

Administrator

confirmed by X-ray diffraction technique which leads to the introduction of defects in ZnO. Indium doping ... elements like Al, Ga and In can be used as n-type dopant. (Kato et al 2002) .... (α is the absorption coefficient and hν the photon energy).

Generic Top-Functionalization of Patterned Antifouling Zwitterionic Polymers on Indium Tin Oxide

NARCIS (Netherlands)

Li, Y.; Giesbers, M.; Zuilhof, H.

2012-01-01

This paper presents a novel surface engineering approach that combines photochemical grafting and surface-initiated atom transfer radical polymerization (SI-ATRP) to attach zwitterionic polymer brushes onto indium tin oxide (ITO) substrates. The photochemically grafted hydroxyl-terminated organic

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

Science.gov (United States)

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Solvent effects on extraction of aluminum(III), gallium(III), and indium(III), with decanoic acid

International Nuclear Information System (INIS)

Yamada, Hiromichi; Hayashi, Hisao; Fujii, Yukio; Mizuta, Masateru

1986-01-01

Extraction of aluminum(III) and indium(III) with decanoic acid in 1-octanol was carried out at 25 deg C and at an aqueous ionic strength of 0.1 mol dm -3 (NaClO 4 ). Monomeric and tetrameric aluminum(III) decanoates and monomeric indium(III) decanoate are responsible for the extraction. From a comparison of the present results with those obtained from the previous works, the polymerization of the extracted species was found to be more extensive in benzene than in 1-octanol, and the metal decanoates were highly polymerized in the following order in both solvents: Al > Ga > In. (author)

Indium-111 autologous tagged leukocytes in the diagnosis of intraperitoneal sepsis

International Nuclear Information System (INIS)

Ascher, N.L.; Ahrenholz, D.H.; Simmons, R.L.; Weiblen, B.; Gomez, L.; Forstrom, L.A.; Frick, M.P.; Henke, C.; McCullough, J.

1979-01-01

The results of a new test using indium oxine in the diagnosis of postoperative infection are reported. Indium-111 was used to label autologous polymorphonuclear leukocytes, which when reinjected migrate to sites of infection and inflammation. Standard scintigraphy localizes the labeled inflammatory cells at these sites. Sixty-six scans were performed in 43 surgical patients. Thirty-seven scans were categorized as true-positive; 19 scans were categorized as true-negative. Therefore, the accuracy rate was 85%. Two scans (3%) in one patient represented false-positive results. Two scans (3%) were positive for inflammation but there was no infection present; this group was denoted as equivocal. Six scans (9%) were false-negative; false-negative scans are more likely in old lesions with poor blood supply and in areas that overlap regions of normal uptake. The noninvasive nature of the test, high accuracy rate, and ease of administration make it a potentially useful tool in the diagnosis of postoperative infection

The use of indium-111 labeled platelet scanning for the detection of asymptomatic deep venous thrombosis in a high risk population

International Nuclear Information System (INIS)

Siegel, R.S.; Rae, J.L.; Ryan, N.L.; Edwards, C.; Fortune, W.P.; Lewis, R.J.; Reba, R.C.

1989-01-01

Five hundred indium-111 labeled platelet imaging studies (387 donor and 113 autologous) were performed postoperatively in 473 patients who had undergone total hip replacement, total knee replacement, or internal fixation of a hip fracture to detect occult deep venous thrombosis. All patients had been anticoagulated prophylactically with aspirin, warfarin sodium (Coumadin), or dextran. Thirty-four possible cases of proximal deep venous thrombosis were identified in 28 asymptomatic patients. To verify the scan results, 31 venograms were performed in 25 patients (three refused). In 21 of 31 cases, totally occlusive thrombi were detected; in 5 cases, partially occlusive thrombi were detected; in 5 cases, no thrombus was seen. No patient who had a negative scan nor any patient who had a verified positive scan (and received appropriate heparin therapy) subsequently developed symptoms or signs of pulmonary embolism. One hundred forty-one indium study patients also underwent Doppler ultrasonography/impedance plethysmography (Doppler/IPG) as a comparative non-invasive technique. In 137 cases, the results of the indium study and Doppler/IPG studies were congruent. The indium study had no false negative results that were detected by Doppler/IPG. No patient had any clinically evident toxicity. These results suggest that indium-111 labeled platelet scanning is a safe, noninvasive means for identifying DVT in high risk patients

Highly Sensitive ZnO(Ga, In for Sub-ppm Level NO2 Detection: Effect of Indium Content

Directory of Open Access Journals (Sweden)

Natalia Vorobyeva

2017-06-01

Full Text Available Nanocrystalline ZnO, ZnO(Ga, and ZnO(Ga, In samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO2 were studied at 150–450 °C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In sensor signal to NO2 at 250 °C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 °C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In–Ga–Zn–O layer that forms on the ZnO surface.

Improved superconducting properties of La{sub 3}Co{sub 4}Sn{sub 13} with indium substitution

Energy Technology Data Exchange (ETDEWEB)

Neha, P.; Srivastava, P. [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); Jha, R. [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); National Physical Laboratory, New Delhi 110012 (India); Shruti [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India); Awana, V.P.S. [National Physical Laboratory, New Delhi 110012 (India); Patnaik, S., E-mail: spatnaik@mail.jnu.ac.in [School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India)

2016-04-25

We report two fold increase in superconducting transition temperature of La{sub 3}Co{sub 4}Sn{sub 13} by substituting indium at the tin site. The transition temperature of this skutterudite related compound is observed to increase from 2.5 K to 5.1 K for 10% indium substituted sample. The band structure and density of states calculations also indicate such a possibility. The compounds exhibit type-II superconductivity and the values of lower critical field (H{sub c1}), upper critical field (H{sub c2}), Ginzburg–Landau coherence length (ξ), penetration depth (λ) and GL parameter (κ) are estimated to be 0.0028 T, 0.68 T, 21.6 nm, 33.2 nm and 1.53 respectively for La{sub 3}Co{sub 4}Sn{sub 11.7}In{sub 1.3}. Hydrostatic external pressure leads to decrease in transition temperature and the calculated pressure coefficient is −0.311 K/GPa. Flux pinning and vortex activation energies also improved with indium addition. Only positive frequencies are observed in phonon dispersion curve that relate to the absence of charge density wave or structural instability in the normal state. - Highlights: • Superconducting transition temperature of La{sub 3}Co{sub 4}Sn{sub 13} increases two fold by indium substitution. • Band structure and all basic superconducting parameters (e.g,. H{sub c1}, H{sub c2}, ξ,λ and κ are ascertained. • Dependence of superconducting properties under external pressure is studied.

Diffuse pulmonary uptake of indium-111 chloride in idiopathic myelofibrosis

International Nuclear Information System (INIS)

Vieras, F.; Boyd, C.M.; Mora, P.A.

1979-01-01

Unusual indium-111 accumulation and extramedullary hematopoiesis in the lungs of a patient with idiopathic myelofibrosis are described. The bone marrow scan taken 24 h after intravenous injection of 111 InCl 3 faithfully depicted the abnormal distribution of marrow elements as assessed histologically at autopsy, thereby supporting the usefulness of 111 InCl 3 for marrow imaging

A comparison of gallium-67 citrate scintigraphy and indium-111 labelled leukocyte imaging for the diagnosis of prosthetic joint infection. Preliminary results

International Nuclear Information System (INIS)

McKillop, J.H.; Cuthbert, G.F.; Gray, H.W.; McKay, Iain; Sturrock, R.D.

1982-01-01

Preliminary experience in comparing Gallium-67 imaging in patients with a painful prosthetic joint to the findings on Indium-111 labelled leukocyte imaging is reported. In the small series of patients so far studied, no clear advantage has emerged for either Gallium-67 or Indium-111 leukocyte imaging in terms of sensitivity or specificity for joint prosthesis infection. Should a larger group confirm the preliminary findings, Gallium-67 imaging may be preferable to Indium-111 leukocyte imaging in the patient with the painful joint prosthesis, in view of the greater simplicity of the former technique

Biocompatible Au@Carbynoid/Pluronic-F127 nanocomposites synthesized by pulsed laser ablation assisted CO2 recycling

Science.gov (United States)

Del Rosso, T.; Louro, S. R. W.; Deepak, F. L.; Romani, E. C.; Zaman, Q.; Tahir; Pandoli, O.; Cremona, M.; Freire Junior, F. L.; De Beule, P. A. A.; De St. Pierre, T.; Aucelio, R. Q.; Mariotto, G.; Gemini-Piperni, S.; Ribeiro, A. R.; Landi, S. M.; Magalhães, A.

2018-05-01

Ligand-free carbynoid-encapsulated gold nanocomposites (Au@Carbynoid NCs) with blue-shifted localized surface plasmon resonance (LSPR) have been synthesized by CO2 recycling induced by pulsed laser ablation (PLA) of a solid gold target in aqueous solution with NaOH at pH 7.0. High Resolution Transmission Electron Microscopy (HRTEM) images at not destructive acceleration voltage of 80 kV revealed carbynoid nanocrystals around the gold core, associated to the intense bond length alternation (BLA) Raman mode of the carbon atomic wires (CAWs), centered at 2124 cm-1, observed in the Surface Enhanced Raman Scattering (SERS) spectra. It was verified that interlinking process with sp to sp2 conversion of the CAWs is induced both by high acceleration voltage in HRTEM and high irradiance of the excitation beam used in SERS measurements. Post synthesis mixing of Pluronic-F127 copolymer with pre-synthesized Au@Carbynoid NCs allows the formation of a fully biocompatible colloidal solution of Au@Carbynoid/Copolymer NCs. SERS investigation highlights that the Raman band of the BLA mode can be used as efficient Raman tag to monitor the functionalization of the NCs with the copolymer. The biocompatibility of the NCs was demonstrated performing a study of cytotoxicity using human skin fibroblasts. As proof of principle, it was demonstrated that the photodynamic activity of the bifunctional Au@Carbynoid/PF127 NCs in the presence of chlorin e6 (Ce6) drug can be enhanced inducing the aggregation state of the colloidal suspension. The stability of the colloidal dispersions of Au@Carbynoid NCs functionalized with Pluronic-F127 is verified after centrifugation in PBS (0.15 mol L-1 NaCl) solutions, confirming the possibility to use the green carbynoid based NCs as drug-carrier in biological applications.

Detection of a prosthetic aortic valvular abscess with indium-111-labeled leukocytes

Energy Technology Data Exchange (ETDEWEB)

Oates, E.; Sarno, R.C.

1988-10-01

An unsuspected annular abscess at the base of a prosthetic aortic valve in a patient with endocarditis was identified by indium-111-labeled leukocyte scintigraphy alone. This highly sensitive and specific technique expediently demonstrated the surgically proven inflammatory focus.

Detection of a prosthetic aortic valvular abscess with indium-111-labeled leukocytes

International Nuclear Information System (INIS)

Oates, E.; Sarno, R.C.

1988-01-01

An unsuspected annular abscess at the base of a prosthetic aortic valve in a patient with endocarditis was identified by indium-111-labeled leukocyte scintigraphy alone. This highly sensitive and specific technique expediently demonstrated the surgically proven inflammatory focus

Characteristics of AZO thin films prepared at various Al target input current deposited on PET substrate

Science.gov (United States)

Kim, Yun-Hae; Park, Chang-Wook; Lee, Jin-Woo; Lee, Dong Myung

2015-03-01

Transparent conductive oxide is a thin film to be used in numerous applications throughout the industry in general. Transparent electrode materials used in these industries are in need of light transmittance with excellent high and low electrical characteristics, substances showing the most excellent physical properties while satisfying all the characteristics such as indium tin oxide film. However, reserves of indium are very small, there is an environmental pollution problem. So the study of zinc oxide (ZnO) is actively carried out in an alternative material. This study analyzed the characteristics by using a direct current (DC) magnetron sputtering system. The electric and optical properties of these films were studied by Hall measurement and optical spectroscopy, respectively. When the Al target input current is 2 mA and 4 mA, it demonstrates about 80% transmittance in the range of the visible spectrum. Also, when Al target input current was 6 mA, sheet resistance was the smallest on PET substrate. The minimum resistivity is 3.96×10-3 ohm/sq.

Ion implantation of Indium in Hgsub(1-x)Cdsub(x)Te

International Nuclear Information System (INIS)

Destefanis, G.L.

1984-05-01

In this paper, the author shows that it is possible to produce n-p junctions in Hgsub(1-x)Cdsub(x)Te by ion implantation and in which the N zone is not induced by the irradiation defects but by the electrically activated (annealing) indium trace amounts [fr

Sol–gel synthesis of nanostructured indium tin oxide with controlled morphology and porosity

Energy Technology Data Exchange (ETDEWEB)

Kőrösi, László, E-mail: ltkorosi@gmail.com [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Scarpellini, Alice [Department of Nanochemistry, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova (Italy); Petrik, Péter [Institute for Technical Physics and Materials Science, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary); Papp, Szilvia [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Dékány, Imre [MTA-SZTE Supramolecular and Nanostructured Materials Research Group, University of Szeged, Dóm tér 8, H-6720 Szeged (Hungary)

2014-11-30

Graphical abstract: - Highlights: • Nanocrystalline ITO thin films and powders were prepared by a sol–gel method. • The nature of the compounds used for hydrolysis plays a key role in the morphology. • Hydrolysis of In{sup 3+}/Sn{sup 4+} with EA led to a rod-like morphology. • Monodisperse spherical ITO nanoparticles were obtained on the use of AC. • ITO{sub E}A was highly porous, while ITO{sub A}C contained densely packed nanocrystals. - Abstract: Nanostructured indium tin oxide (ITO) powders and thin films differing in morphology and porosity were prepared by a sol–gel method. In{sup 3+} and Sn{sup 4+} were hydrolyzed in aqueous medium through the use of ethanolamine (EA) or sodium acetate (AC). X-ray diffraction measurements demonstrated that both EA and AC furnished indium tin hydroxide, which became nanocrystalline after aging for one day. The indium tin hydroxide samples calcined at 550 °C afforded ITO with a cubic crystal structure, but the morphology differed significantly, depending on the agent used for hydrolysis. Electron microscopy revealed the formation of round monodisperse nanoparticles when AC was used, whereas the application of EA led to rod-like ITO nanoparticles. Both types of nanoparticles were suitable for the preparation of transparent and conductive ITO thin films. The influence of the morphology and porosity on the optical properties is discussed.

US -endorphin-(1-27) is a naturally occurring antagonist to etorphine-induced analgesia

Energy Technology Data Exchange (ETDEWEB)

Nicolas, P.; Li, C.H.

1985-05-01

The potent opioid peptide US -endorphin is found in the brain and pituitary with two related fragments, US -endorphin-(1-27) and US -endorphin-(1-26). The fragments, retain substantial opioid-receptor binding activity but are virtually inactive analgesically. US -Endorphin-(1-27) inhibits US -endorphin-induced and etorphine-induced analgesia when coinjected intracerebroventricularly into mice. Antagonism by competition at the same site(s) is suggested from parallel shifts of the dose-response curves of etorphine or US -endorphin in the presence of US -endorphin-(1-27). Its potency is 4-5 times greater than that of the opiate antagonist naloxone. US -Endorphin-(1-26) does not antagonize the antinociceptive action of etorphine or US -endorphin in doses up to 500 pmol per animal.

Antibody-Hapten Recognition at the Surface of Functionalized Liposomes Studied by SPR: Steric Hindrance of Pegylated Phospholipids in Stealth Liposomes Prepared for Targeted Radionuclide Delivery

Directory of Open Access Journals (Sweden)

Eliot. P. Botosoa

2011-01-01

Full Text Available Targeted PEGylated liposomes could increase the amount of drugs or radionuclides delivered to tumor cells. They show favorable stability and pharmacokinetics, but steric hindrance of the PEG chains can block the binding of the targeting moiety. Here, specific interactions between an antihapten antibody (clone 734, specific for the DTPA-indium complex and DTPA-indium-tagged liposomes were characterized by surface plasmon resonance (SPR. Non-PEGylated liposomes fused on CM5 chips whereas PEGylated liposomes did not. By contrast, both PEGylated and non-PEGylated liposomes attached to L1 chips without fusion. SPR binding kinetics showed that, in the absence of PEG, the antibody binds the hapten at the surface of lipid bilayers with the affinity of the soluble hapten. The incorporation of PEGylated lipids hinders antibody binding to extents depending on PEGylated lipid fraction and PEG molecular weight. SPR on immobilized liposomes thus appears as a useful technique to optimize formulations of liposomes for targeted therapy.

13 CFR 127.600 - Who may protest the status of a concern as an EDWOSB or WOSB?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Who may protest the status of a concern as an EDWOSB or WOSB? 127.600 Section 127.600 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Protests § 127.600 Who may...

Extraction of aluminium, gallium and indium by tri-n-octylamine from citric acid solutions

International Nuclear Information System (INIS)

Bol'shova, T.A.; Kaplunova, A.M.; Ershova, N.I.; Varshal, E.B.

1984-01-01

A study was made on aluminium, gallium and indium distribution in triocylam ine(toa)-citric acid system depending on pH of aqueous solution, concentration of components and foreign electrolytes. The methods of equilibrium shift, compe ting ions and isomolar series were used to find the component ratio in toa: Me: citric acid complexes equal to 3:1:2. The equation describing the extraction of citrate gallium, indium and aluminium complexes by trioctylamine was suggested. Using the difference in extraction behavior of the elements of aluminium, yttri um and lanthanum subgroup the extraction-chromatographic method of their separat ion, applied for the analysis of optical glasses was developed. The method is c haracterized by satisfactory reproduction, simplicity and expre

HIV-1 tat protein recruits CIS to the cytoplasmic tail of CD127 to induce receptor ubiquitination and proteasomal degradation

Energy Technology Data Exchange (ETDEWEB)

Sugden, Scott, E-mail: scott.sugden@ircm.qc.ca [The Ottawa Hospital Research Institute, 501 Smyth Road, Ottawa, Ontario, Canada K1H 8L6 (Canada); Department of Biochemistry, Microbiology and Immunology, Faculty of Medicine, University of Ottawa, 451 Smyth Road, Ottawa, Ontario, Canada K1H 8M5 (Canada); Ghazawi, Feras [The Ottawa Hospital Research Institute, 501 Smyth Road, Ottawa, Ontario, Canada K1H 8L6 (Canada); Department of Biochemistry, Microbiology and Immunology, Faculty of Medicine, University of Ottawa, 451 Smyth Road, Ottawa, Ontario, Canada K1H 8M5 (Canada); MacPherson, Paul, E-mail: pmacpherson@toh.on.ca [The Ottawa Hospital Research Institute, 501 Smyth Road, Ottawa, Ontario, Canada K1H 8L6 (Canada); Department of Biochemistry, Microbiology and Immunology, Faculty of Medicine, University of Ottawa, 451 Smyth Road, Ottawa, Ontario, Canada K1H 8M5 (Canada); Division of Infectious Diseases, The Ottawa Hospital General Campus, 501 Smyth Road, Ottawa, Ontario, Canada K1H 8L6 (Canada)

2016-11-15

HIV-1 Tat protein down regulates expression of the IL-7 receptor alpha-chain (CD127) from the surface of CD8 T cells resulting in impaired T cell proliferation and cytolytic capacity. We have previously shown that soluble Tat protein is taken up by CD8 T cells and interacts with the cytoplasmic tail of CD127 to induce receptor degradation. The N-terminal domain of Tat interacts with CD127 while the basic domain directs CD127 to the proteasome. We have also shown that upon IL-7 binding to its receptor, CD127 is phosphorylated resulting in CIS-mediated proteasomal degradation. Here, we show that Tat mimics this process by recruiting CIS to CD127 in the absence of IL-7 and receptor phosphorylation, leading to CD127 ubiquitination and degradation. Tat therefore acts as an adapter to induce cellular responses under conditions where they may not otherwise occur. Thusly, Tat reduces IL-7 signaling and impairs CD8 T cell survival and function. -- Highlights: •Soluble HIV-1 Tat decreases CD127 expression on CD8 T cells, causing dysfunction. •Tat induces CD127 ubiquitination without activating IL-7 signaling. •Tat binds CD127 and recruits the E3 ubiquitin ligase CIS via its basic domain. •Tat hijacks a normal cellular mechanism to degrade CD127 without IL-7 signaling.

HIV-1 tat protein recruits CIS to the cytoplasmic tail of CD127 to induce receptor ubiquitination and proteasomal degradation

International Nuclear Information System (INIS)

Sugden, Scott; Ghazawi, Feras; MacPherson, Paul

2016-01-01

HIV-1 Tat protein down regulates expression of the IL-7 receptor alpha-chain (CD127) from the surface of CD8 T cells resulting in impaired T cell proliferation and cytolytic capacity. We have previously shown that soluble Tat protein is taken up by CD8 T cells and interacts with the cytoplasmic tail of CD127 to induce receptor degradation. The N-terminal domain of Tat interacts with CD127 while the basic domain directs CD127 to the proteasome. We have also shown that upon IL-7 binding to its receptor, CD127 is phosphorylated resulting in CIS-mediated proteasomal degradation. Here, we show that Tat mimics this process by recruiting CIS to CD127 in the absence of IL-7 and receptor phosphorylation, leading to CD127 ubiquitination and degradation. Tat therefore acts as an adapter to induce cellular responses under conditions where they may not otherwise occur. Thusly, Tat reduces IL-7 signaling and impairs CD8 T cell survival and function. -- Highlights: •Soluble HIV-1 Tat decreases CD127 expression on CD8 T cells, causing dysfunction. •Tat induces CD127 ubiquitination without activating IL-7 signaling. •Tat binds CD127 and recruits the E3 ubiquitin ligase CIS via its basic domain. •Tat hijacks a normal cellular mechanism to degrade CD127 without IL-7 signaling.

13 CFR 127.300 - How is a concern certified as an EDWOSB or WOSB?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false How is a concern certified as an EDWOSB or WOSB? 127.300 Section 127.300 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Certification of EDWOSB or WOSB Status...

13 CFR 127.304 - How does a concern obtain certification from an approved certifier?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false How does a concern obtain certification from an approved certifier? 127.304 Section 127.304 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Certification of EDWOSB or WOSB...

Synthesis of ITO Powder by Dry Process and Lifetime Characteristics of the ITO Target Fabricated with its Powder

Science.gov (United States)

Takahashi, Seiichiro; Itoh, Hironori; Komatsu, Ryuichi

Lifetime of an indium tin oxide (ITO) target is an important characteristic in the production of liquid crystal displays (LCDs). Increasing the sintering density of the ITO target is assumed to lead to an increased lifetime. So far, it has been clarified that the carbon concentration in In2O3 powder, the raw material of ITO targets, influences remarkably the target lifetime. In this study, with the aim of reducing the concentration of carbon in In2O3 powder, the synthesis of In2O3 powder containing dissolved Sn by a dry process was performed.

SU-E-I-14: Comparison of Iodine-Labeled and Indium-Labeled Antibody Biodistributions

Energy Technology Data Exchange (ETDEWEB)

Williams, L [Retired from City of Hope Medical Center, Arcadia, CA (United States)

2014-06-01

Purpose: It is often assumed that animal biodistributions of novel proteins are not dependent upon the radiolabel used in their determination. In units of percent injected dose per gram of tissue (%ID/g), organ uptake results (u) may be obtained using either iodine or metal as radioactive labels. Iodination is preferred as it is a one-step process whereas metal labeling requires two chemical procedures and therefore more protein material. It is important to test whether the radioactive tag leads to variation in the uptake value. Methods: Uptakes of 3antibodies to Carcinoembryonic Antigen (CEA) were evaluated in a nude mouse model bearing 150 to 300 mg LS174T human colon cancer xenografts. Antibodies included diabody (56 kDa), minibody (80kDa) and intact M5A (150 kDa) anti-CEA cognates. Both radioiodine and indium-111 labels were used with uptakes evaluated at 7 time(t) points out to 96 h. Ratios (R) of u(iodine-label)/u(indium-label) were determined for liver, spleen, kidneys, lung and tumor. Results: Hepatic loss was rapid for diabody and minibody; by 24 h their R values were only 2%; i.e., uptake of iodine was 2% of that of indium for these 2 antibodies. By contrast, R for the intact cognate was 50% at that time point. Splenic results were similar. Tumor uptake ratios did not depend upon the antibody type and were 50% at 24 h. Conclusions: Relatively rapid loss of iodine relative to indium in liver and spleen was observed in lower mass antibodies. Tumor ratios were larger and independent of antibody type. Aside from tumor, the R ratio of uptakes depended on the antibody type. R values decreased monotonically with time in all tissues and for all cognates. Using this ratio, one can possibly correct iodine-based u (t) results so that they resemble radiometal-derived biodistributions.

129I/127I ratios in surface waters of the English Lake District

International Nuclear Information System (INIS)

Atarashi-Andoh, M.; Schnabel, C.; Cook, G.; MacKenzie, A.B.; Dougans, A.; Ellam, R.M.; Freeman, S.; Maden, C.; Olive, V.; Synal, H.-A.; Xu, S.

2007-01-01

Accelerator Mass Spectrometry (AMS) was used to measure 129 I/ 127 I ratios in surface sea, lake, and river water samples collected in 2004 and 2005 from the English Lake District and from SW Scotland, areas which are in relatively close proximity to the Sellafield nuclear fuel reprocessing plant in NW England. The 129 I/ 127 I ratios in surface water collected from the shore of the Irish Sea were in the range 2.8 x 10 -6 to 8.2 x 10 -6 . These ratios are one order of magnitude higher than that of seawater collected from the Irish Sea in 1992, correlating with the increase in 129 I content of the Sellafield liquid effluent discharge over the last decade. The 129 I/ 127 I ratios in lakes in the Lake District were in the range 0.7 x 10 -6 to 6.4 x 10 -6 and decreased exponentially as a function of distance from Sellafield. Consideration of the relative variation of stable I concentrations and 129 I/ 127 I ratios suggests that Sellafield gaseous discharges may be the dominant source of 129 I to the lakes

Thermodynamic Considerations for a Pyrometallurgical Extraction of Indium and Silver from a Jarosite Residue

Directory of Open Access Journals (Sweden)

Stefan Steinlechner

2018-05-01

Full Text Available Indium and silver are technologically important, critical metals, and in the majority of cases, they are extracted as a by-product of another carrier metal. The importance of indium has seen recent growth, and for technological reasons, these metals can be found in industrial residues from primary zinc production, such as the iron precipitate—jarosite. To secure the supply of such metals in Europe, and with the idea of a circular economy and the sustainable use of raw materials, the recycling of such industrial residues is coming into focus. Due to the low value of jarosite, the focus must lie simultaneously on the recovery of valuable metals and the production of high-quality products in order to pursue an economical process. The objective of this article is to give the fundamentals for the development of a successful process to extract the minor elements from roasted jarosite. As such, we use thermodynamic calculations to show the behavior of indium and silver, leading to a recommendation for the required conditions for a successful extraction process. In summary, the formation of chlorine compounds shows high potential to meet the challenge of simultaneously recovering these metals together with zinc at the lowest possible energy input.

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

Science.gov (United States)

Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

2013-09-01

We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

The energy of hydration and solvation of indium salts in the acetylacetone-InCl3-water system

International Nuclear Information System (INIS)

Kulawik, I.; Baumgartner, T.

1978-01-01

On the base of the previous papers concerning the investigations in the extraction systems the experiments were performed for the determination of thermodynamical distribution coefficient of indium salts between two phases in the system: acetylacetone-InCl 3 -water and the energy of hydration and solvation of that system. The results of the surface and interfacial potentials measurements of the system were presented as a function of the InCl 3 concentration in the system before the extraction. The extraction coefficients of indium as a function of concentration of InCl 3 in this system were determined. The method of the visible absorption spectra was used to the determination of concentration of indium in both phases after the extraction. The relation between the percentage of the extraction and the extraction coefficient was determined. The investigations were performed in the system containing 0.1 M HCl and 0.001 M HCl in the aqueous phase. The results of experiments are tabulated and graphically presented in figures. (author)

42 CFR 433.127 - Termination of FFP for failure to provide access to claims processing and information retrieval...

Science.gov (United States)

2010-10-01

... claims processing and information retrieval systems. 433.127 Section 433.127 Public Health CENTERS FOR... PROGRAMS STATE FISCAL ADMINISTRATION Mechanized Claims Processing and Information Retrieval Systems § 433.127 Termination of FFP for failure to provide access to claims processing and information retrieval...

19 CFR 12.7 - Permits required for importation.

Science.gov (United States)

2010-04-01

... Department of Health and Human Services under the said act require that each container of milk or cream... THE TREASURY SPECIAL CLASSES OF MERCHANDISE Milk and Cream § 12.7 Permits required for importation. (a... Federal Import Milk Act, the importation into the United States of milk and cream is prohibited unless the...

Iodine (I-129 and I-127) in aerosols from northern Europe

DEFF Research Database (Denmark)

Englund, E.; Aldahan, A.; Hou, Xiaolin

2010-01-01

Huge amount of 129I has been emitted to the environment during the last decades from a variety of anthropogenic nuclear activities. Aerosols represent a carrier of iodine in the atmosphere in addition to gaseous forms for which data are lacking in Sweden. In this study the first time series...... of iodine isotopes (129I and 127I) in aerosols covering the period of 1983 to 2008 from two sites in Sweden are presented. The results show that both 129I and 127I concentrations are considerably higher in southern compared to northern Sweden. Furthermore there is a significant difference in the relative...

Measurement of the indium segregation in InGaN based LEDs with single atom sensitivity

International Nuclear Information System (INIS)

Jinschek, Joerg; Kisielowski, Christian; Van Dyck, Dirk; Geuens, Philippe

2003-01-01

In light emitting diodes (LED) consisting of GaN/InGaN/GaN quantum wells (QWs), the exact indium distribution inside the wells of the active region affects the performance of devices. Indium segregation can take place forming small InGaN clusters of locally varying composition. In the past, we used a local strain analysis from single HRTEM lattice images to determine the In composition inside the InGaN QWs with a resolution of 0.5 nm x 0.3 nm. Truly atomic resolution can be pursued by exploitation of intensity dependencies on the atomic number (Z) of the electron exit-wave (EW). In microscopes with sufficient sensitivity, local variations of amplitude and phase are found to be discrete with sample thickness, which allows for counting the number of atoms in each individual column of ∼0.08 nm diameter. In QW s of ∼17 percent of average indium concentration it is possible to discriminate between pure Ga columns and columns containing 1, 2, 3, or more In atoms because phase changes are discrete and element specific. The preparation of samples with atomically flat surfaces is a limiting factor for the application of the procedure

Concentration dependence of surface properties and molar volume of multicomponent system indium-tin-lead-bismuth

Energy Technology Data Exchange (ETDEWEB)

Dadashev, R; Kutuev, R [Complex Science Research Institute of the Science Academy of the Chechen Republic, 21 Staropromisl. shosse, Grozny 364096 (Russian Federation); Elimkhanov, D [Science Academy of the Chechen Republic (Russian Federation)], E-mail: edzhabrail@mail.ru

2008-02-15

The results of an experimental research of surface properties of the four-component system indium-tin-lead-bismuth are presented. The researches under discussion were carried out in a combined device in which the surface tension ({sigma}) is measured by the method of maximum pressure in a drop, and density ({rho}) is measured by advanced aerometry. Measurement errors are 0.7 % for surface tension measurement, and 0.2 % for density measurement. The study of the concentration dependence of {sigma} in this system has revealed the influence of the third and fourth components upon the characteristics of surface tension isotherms of the binary system indium-tin. It was found out that with an increase in the content of the third and fourth components the depth of the minimum on the surface tension isotherms of the indium-tin system {sigma} decreases. On the basis of the concentration dependence of the phenomenon of concentration bufferity is revealed. It is shown that despite the complex character, isotherms of {sigma} on beam sections of a multicomponent system do not contain qualitatively new features in comparison with the isotherms of these properties in lateral binary systems.

Influence of Fe{sup 3+} substitution on the dielectric and ferroelectric characteristics of Lead Indium Niobate

Energy Technology Data Exchange (ETDEWEB)

Divya, A.S.; Kumar, V., E-mail: vkumar10@yahoo.com

2015-07-15

Highlights: • Prepared phase-pure Fe{sup 3+}-substituted Lead Indium Niobate, Pb[(In{sub 0.50−x}Fe{sub x})Nb{sub 0.50}]O{sub 3} by sol–gel method. • Spontaneous Relaxor (R) → Ferroelectric (FE) transition observed for the composition with x = 0.20. • Local structural rearrangement responsible for R → FE transition has been confirmed by Raman spectroscopy. - Abstract: Lead Indium Niobate, Pb(In{sub 0.50}Nb{sub 0.50})O{sub 3} (PIN) is a complex perovskite that exhibits Relaxor (R) characteristics. In this study, we report the synthesis of phase-pure compositions in the system Pb[(In{sub 0.50−x}Fe{sub x})Nb{sub 0.50}]O{sub 3} by sol–gel method and discuss the influence of isovalent substitution of Indium by Iron on the dielectric and ferroelectric characteristics. Spontaneous transition to the Ferroelectric (FE) phase has been observed for the composition having x = 0.20. Local structural rearrangements responsible for R → FE transition have also been studied by Raman spectroscopy and are discussed in detail.

Technological process and optimum design of organic materials vacuum pyrolysis and indium chlorinated separation from waste liquid crystal display panels

Energy Technology Data Exchange (ETDEWEB)

Ma, En; Xu, Zhenming, E-mail: zmxu@sjtu.edu.cn

2013-12-15

Highlights: • The vacuum pyrolysis–vacuum chlorinated separation system was proposed to recover the waste LCD panel. • The system can recycle the whole waste LCD panels efficiently without negative effects to environment. • The 82.03% of the organic materials was reclaimed. All pyrolysis products can be utilized by a reasonable way. • The separation of indium was optimized by the central composite design (CCD) under response surface methodology (RSM). • The recovery ratio of indium was further increased to 99.97%. -- Abstract: In this study, a technology process including vacuum pyrolysis and vacuum chlorinated separation was proposed to convert waste liquid crystal display (LCD) panels into useful resources using self-design apparatuses. The suitable pyrolysis temperature and pressure are determined as 300 °C and 50 Pa at first. The organic parts of the panels were converted to oil (79.10 wt%) and gas (2.93 wt%). Then the technology of separating indium was optimized by central composite design (CCD) under response surface methodology (RSM). The results indicated the indium recovery ratio was 99.97% when the particle size is less than 0.16 mm, the weight percentage of NH{sub 4}Cl to glass powder is 50 wt% and temperature is 450 °C. The research results show that the organic materials, indium and glass of LCD panel can be recovered during the recovery process efficiently and eco-friendly.

33 CFR 127.1507 - Water systems for fire protection.

Science.gov (United States)

2010-07-01

... (CONTINUED) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Hazardous Gas Firefighting Equipment § 127.1507 Water... means for distributing and applying the water to protect personnel; to cool storage tanks, equipment...

Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

Science.gov (United States)

Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

2012-02-01

The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

Coulomb excitations of low lying levels in 127I and 197Au

International Nuclear Information System (INIS)

Singh, K.P.; Tayal, D.C.; Hans, H.S.

1988-01-01

The low-lying levels of 127 I and 197 Au were Coulomb excited with 3.54 to 4.2 MeV protons. The reduced quadrupole transition probabilities of the 203, 374.9, 418, 618.4, 628.7, 651.1 and 745.5 keV states of 127 I, and the 268.8, 278.9, 502, and 547.5 keV states of 197 Au was measured from Coulomb excitation by observing the de-excitation gamma rays with a high resolution Ge(Li) detector. The low-energy protons were used for the first time to Coulomb-excite the two levels at 618.4 and 651.1 keV of 127 I and one level at 502 keV of 197 Au. The present experimental results are found in agreement with the existing experimental data except the B(E2) value of the level at 268.8 keV of 197 Au. (author). 4 figs., 4 tabs., 32 refs

38 CFR 4.127 - Mental retardation and personality disorders.

Science.gov (United States)

2010-07-01

... AFFAIRS SCHEDULE FOR RATING DISABILITIES Disability Ratings Mental Disorders § 4.127 Mental retardation and personality disorders. Mental retardation and personality disorders are not diseases or injuries... from them may not be service-connected. However, disability resulting from a mental disorder that is...

Selective growth of gold onto copper indium sulfide selenide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Witt, Elena; Parisi, Juergen; Kolny-Olesiak, Joanna [Oldenburg Univ. (Germany). Inst. of Physics, Energy and Semiconductor Research

2013-05-15

Hybrid nanostructures are interesting materials for numerous applications in chemistry, physics, and biology, due to their novel properties and multiple functionalities. Here, we present a synthesis of metal-semiconductor hybrid nanostructures composed of nontoxic I-III-VI semiconductor nanoparticles and gold. Copper indium sulfide selenide (CuInSSe) nanocrystals with zinc blende structure and trigonal pyramidal shape, capped with dodecanethiol, serve as an original semiconductor part of a new hybrid nanostructure. Metallic gold nanocrystals selectively grow onto vertexes of these CuInSSe pyramids. The hybrid nanostructures were studied by transmission electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, and UV-Vis-absorption spectroscopy, which allowed us conclusions about their growth mechanism. Hybrid nanocrystals are generated by replacement of a sacrificial domain in the CuInSSe part. At the same time, small selenium nanocrystals form that stay attached to the remaining CuInSSe/Au particles. Additionally, we compare the synthesis and properties of CuInSSe-based hybrid nanostructures with those of copper indium disulfide (CuInS{sub 2}). CuInS{sub 2}/Au nanostructures grow by a different mechanism (surface growth) and do not show any selectivity. (orig.)

Nuclear parameters determination of the {sup 127}Te {beta} {sup -} decay: a proposal for teaching nuclear physics; Determinacao de parametros nucleares do nucleo de {sup 127}Te: uma proposta para o ensino de fisica nuclear

Energy Technology Data Exchange (ETDEWEB)

Batista, Wagner Fonseca

2011-07-01

A study of the {sup 127}Te {beta}{sup -} decay was carried out by means of gamma spectroscopy measurements using high resolution HPGe detector, in the region from 30 keV to 1.0 MeV, aiming to get a better understanding of the {sup 127}Te nuclear structure. The radioactive sources of {sup 12}7Te were obtained from the {sup 126}Te(n,{gamma}){sup 1}'2{sup 7}Te nuclear reaction produced in the IEA- R1 nuclear reactor at IPEN/CNEN-SP. Five gamma {sup t}ransitions previously attributed to this decay were confirmed with a better precision than previously. The half-life of {sup 127}Te was also studied resulting in data with lower uncertainty. Using a set of data selected from gamma spectroscopy measurements was developed and applied a didactic proposal for high school students using the Excel software. (author)

Molecular simulations of a CO2/CO mixture in MIL-127

Science.gov (United States)

Chokbunpiam, Tatiya; Fritzsche, Siegfried; Parasuk, Vudhichai; Caro, Jürgen; Assabumrungrat, Suttichai

2018-03-01

Adsorption and diffusion of an equimolar feed mixture of CO2 and CO in MIL-127 at three different temperatures and pressures up to 12 bar were investigated by molecular simulations. The adsorption was simulated using Gibbs-Ensemble Monte Carlo (GEMC). The structure of the adsorbed phase and the diffusion in the MIL were investigated using Molecular Dynamics (MD) simulations. The adsorption selectivity of MIL-127 for CO2 over CO at 233 K was about 15. When combining adsorption and diffusion selectivities, a membrane selectivity of about 12 is predicted. For higher temperatures, both adsorption and diffusion selectivity are found to be smaller.

7 CFR 29.127 - Demonstrations and courses of instruction.

Science.gov (United States)

2010-01-01

... Section 29.127 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE COMMODITY STANDARDS AND STANDARD... instruction. Charges, not in excess of the cost thereof, as may be approved by the Director, may be made for...

Electrothermal atomization laser-excited atomic fluorescence spectroscopy for the determination of indium

International Nuclear Information System (INIS)

Aucelio, R.Q.; Smith, B.W.; Winefordner, J.D.

1998-01-01

A dye laser pumped by a high-repetition-rate copper vapor laser was used as the excitation source to determine indium at parts-per-trillion level by electrothermal atomization laser-excited atomic fluorescence spectrometry (ETA-LEAFS). A comparison was made between wall atomization, in pyrolytic and nonpyrolytic graphite tubes, and platform atomization. The influence of several chemical modifiers either in solution or precoated in the graphite tube was evaluated. The influence of several acids and NaOH in the analyte solution was also studied. Optimization of the analytical conditions was carried out to achieve the best signal-to-background ratio and consequently an absolute limit of detection of 1 fg. Some possible interferents of the method were evaluated. The method was evaluated by determining indium in blood, urine, soil, and urban dust samples. Recoveries between 99.17 and 109.17% are reported. A precision of 4.1% at the 10 ng g -1 level in water standards was achieved. copyright 1998 Society for Applied Spectroscopy

Pentablock copolymers of pluronic F127 and modified poly(2-dimethyl aminoethyl methacrylate for internalization mechanism and gene transfection studies

Directory of Open Access Journals (Sweden)

Huang SJ

2013-05-01

Full Text Available Shih-Jer Huang,1 Tzu-Pin Wang,1 Sheng-I Lue,2 Li-Fang Wang11Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung, Taiwan; 2Department of Physiology, Kaohsiung Medical University, Kaohsiung, TaiwanAbstract: Cationic polymers are one of the major nonviral gene delivery vectors investigated in the past decade. In this study, we synthesized several cationic copolymers using atom transfer radical polymerization (ATRP for gene delivery vectors: pluronic F127-poly(dimethylaminoethyl methacrylate (PF127-pDMAEMA, pluronic F127-poly (dimethylaminoethyl methacrylate-tert-butyl acrylate (PF127-p(DMAEMA-tBA, and pluronic F127-poly(dimethylaminoethyl methacrylate-acrylic acid (PF127-p(DMAEMA-AA. The copolymers showed high buffering capacity and efficiently complexed with plasmid deoxyribonucleic acid (pDNA to form nanoparticles 80–180 nm in diameter and with positive zeta potentials. In the absence of 10% fetal bovine serum, PF127-p(DMAEMA-AA showed the highest gene expression and the lowest cytotoxicity in 293T cells. After acrylic acid groups had been linked with a fluorescent dye, the confocal laser scanning microscopic image showed that PF127-p(DMAEMA-AA/pDNA could efficiently enter the cells. Both clathrin-mediated and caveolae-mediated endocytosis mechanisms were involved. Our results showed that PF127-p(DMAEMA-AA has great potential to be a gene delivery vector.Keywords: nonviral vector, pluronic F127, dimethylaminoethyl methacrylate, copolymer, atom transfer radical polymerization

13 CFR 127.201 - What are the requirements for ownership of an EDWOSB and WOSB?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What are the requirements for ownership of an EDWOSB and WOSB? 127.201 Section 127.201 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Eligibility Requirements To...

13 CFR 127.502 - How will SBA identify and provide notice of the designated industries?

Science.gov (United States)

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false How will SBA identify and provide notice of the designated industries? 127.502 Section 127.502 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION WOMEN-OWNED SMALL BUSINESS FEDERAL CONTRACT ASSISTANCE PROCEDURES Federal Contract...

Anomalous electrical properties of Pbsub(1-x)Snsub(x)Te layers with indium impurity

International Nuclear Information System (INIS)

Gejman, K.I.; Drabkin, I.A.; Matveenko, A.V.; Mozhaev, E.A.; Parfen'ev, R.V.

1977-01-01

Galvanomagnetic properties of indium doped (5x10 -3 -2x10 -1 at.% In) Pbsub(1-x)Snsub(x)Te monocrystal layers of n-type (x=0.1 - 0.22) sprayed on the (3) spalls of BaF 2 have been investigated. The layers with In display high homogeneity and lower electron density at 77 K, than the layers without In. With decreasing temperature below 20 K in the indium doped Pbsub(1-x)Snsub(x)Te layers an anomalous sharp increase of the electron density calculated from the Hall coefficient and reduction in electron mobility have been observed. The phenomenon under observation is related to the behaviour of indium under conditions of a possible structural phase transition initiated by introducing tin into PbTe. Investigation of the Shubnikov-de Gaas (SG) oscillations confirms the anomalous temperature dependence of the electron density. Distinctive features have been revealed in the SG oscillations of magnetoresistance in the Pbsub(1-x)Snsub(x)Te layers with In and without it, caused by deformations occurring in the films due to different coefficients of linear expansion of the material and a substrate. The splitting energy in the conduction band of the Pbsub(1-x)Snsub(x)Te layers has been determined, and the shift constant of the deformation potential has been estimated

Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

1998-11-27

Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

Low-temperature grown indium oxide nanowire-based antireflection coatings for multi-crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Yu-Cian; Chen, Chih-Yao; Chen, I Chen [Institute of Materials Science and Engineering, National Central University, Taoyuan (China); Kuo, Cheng-Wen; Kuan, Ta-Ming; Yu, Cheng-Yeh [TSEC Corporation, Hsinchu (China)

2016-08-15

Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi-crystalline silicon (mc-Si) solar cells has been investigated. The low-temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O{sub 2}-Ar system using indium nanocrystals as seed particles via the self-catalyzed growth mechanism. The size-dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short-circuit current (from 35.39 to 38.33 mA cm{sup -2}) without deterioration of other performance parameters is observed for mc-Si solar cells coated with InO NWs. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Progress Report: Feasibility Study of an Indium Scintillator Solar Neutrino Experiment

International Nuclear Information System (INIS)

Bellefon, A. de; Barloutaud, R.; Borg, A.; Ernwein, J.; Mosca, L.

1989-09-01

In this document, we report on the progress made to demonstrate the feasibility of an experiment which would measure for the first time the two line sources of solar neutrinos resulting from electron capture by 7 Be and from the p-e-p reaction inside the sun. The detector under study consists of scintillator containing 10 tons of Indium

Scaled-up solvothermal synthesis of nanosized metastable indium oxyhydroxide (InOOH) and corundum-type rhombohedral indium oxide (rh-In{sub 2}O{sub 3})

Energy Technology Data Exchange (ETDEWEB)

Schlicker, Lukas; Bekheet, Maged F.; Gurlo, Aleksander [Technische Univ. Berlin (Germany). Fachgebiet Keramische Werkstoffe

2017-03-01

Phase pure metastable indium oxyhydroxide (InOOH) with crystallite size in the range ca. 2-7 nm is synthesized by a nonaqueous solvothermal synthesis route in ethanol. The influence of synthesis parameters such as temperature, basicity (pH), synthesis time, and water content is carefully addressed. T-pH maps summarize the impact of synthesis temperature and pH and reveal that phase pure InOOH is obtained in water-free solutions at mild temperatures (150-180 C) in highly basic conditions (pH>12). Subsequent calcination of InOOH at 375-700 C in ambient air atmosphere results in metastable nanoscaled rhombohedral indium oxide (rh-In{sub 2}O{sub 3}). The synthesis protocol for phase pure nanocrystalline InOOH material was successfully upscaled allowing for obtaining ca. 3 g of phase-pure InOOH with a yield of ca. 78%. The upscaled InOOH and rh-In{sub 2}O{sub 3} batches are now available for a detailed in-situ characterization of the mechanism of decomposition of InOOH to rh-In{sub 2}O{sub 3} to c-In{sub 2}O{sub 3} as well as for the characterization of the functional properties of InOOH and rh-In{sub 2}O{sub 3} materials.

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

International Nuclear Information System (INIS)

Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

2014-01-01

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

Generation of laser-induced periodic surface structures in indium-tin-oxide thin films and two-photon lithography of ma-N photoresist by sub-15 femtosecond laser microscopy for liquid crystal cell application

Science.gov (United States)

Klötzer, Madlen; Afshar, Maziar; Feili, Dara; Seidel, Helmut; König, Karsten; Straub, Martin

2015-03-01

Indium-tin-oxide (ITO) is a widely used electrode material for liquid crystal cell applications because of its transparency in the visible spectral range and its high electrical conductivity. Important examples of applications are displays and optical phase modulators. We report on subwavelength periodic structuring and precise laser cutting of 150 nm thick indium-tin-oxide films on glass substrates, which were deposited by magnetron reactive DC-sputtering from an indiumtin target in a low-pressure oxygen atmosphere. In order to obtain nanostructured electrodes laser-induced periodic surface structures with a period of approximately 100 nm were generated using tightly focused high-repetition rate sub-15 femtosecond pulsed Ti:sapphire laser light, which was scanned across the sample by galvanometric mirrors. Three-dimensional spacers were produced by multiphoton photopolymerization in ma-N 2410 negative-tone photoresist spin-coated on top of the ITO layers. The nanostructured electrodes were aligned in parallel to set up an electrically switchable nematic liquid crystal cell.

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

International Nuclear Information System (INIS)

Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

2015-01-01

Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, P. [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Bag, A.; Jana, S. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Chakraborty, A. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India); Das, S.; Mahata, M. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

2015-01-01

Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

Noninvasive detection of rejection of transplanted hearts with indium-111-labeled lymphocytes

International Nuclear Information System (INIS)

Eisen, H.J.; Eisenberg, S.B.; Saffitz, J.E.; Bolman, R.M. III; Sobel, B.E.; Bergmann, S.R.

1987-01-01

To determine whether cardiac transplant rejection can be detected noninvasively with indium-111 ( 111 In)-labeled lymphocytes, we studied 11 dogs with thoracic heterotopic cardiac transplants without immunosuppression and five dogs with transplants treated with cyclosporine (10 mg/kg/day) and prednisone (1 mg/kg/day). All were evaluated sequentially with gamma scintigraphy after administration of 150 to 350 muCi of autologous 111 In-lymphocytes. Technetium-99m-labeled red blood cells (1 to 3 mCi) were used for correction of radioactivity in the blood pool attributable to circulating labeled lymphocytes. Lymphocyte infiltration was quantified as the ratio of indium in the myocardium of the transplant or native heart compared with that in blood (indium excess, IE). Results were correlated with mechanical and electrical activity of allografts and with histologic findings in sequential biopsy specimens. In untreated dogs (n = 11), IE was 15.5 +/- 7.0 (SD) in transplanted hearts undergoing rejection and 0.4 +/- 1.1 in native hearts on the day before animals were killed. In dogs treated with cyclosporine and prednisone (n = 5), IE was minimal in allografts during the course of immunosuppression (0.8 +/- 0.4) and increased to 22.9 +/- 11.1 after immunosuppression was stopped. Scintigraphic criteria of rejection (IE greater than 2 SD above that in native hearts) correlated with results of biopsies indicative of rejection and appeared before electrophysiologic or mechanical manifestations of dysfunction. Thus infiltration of labeled lymphocytes in allografts, indicative of rejection, is detectable noninvasively by gamma scintigraphy and provides a sensitive approach potentially applicable to clinical monitoring for early detection of rejection and guidance for titration of immunosuppressive measures

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

International Nuclear Information System (INIS)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

2009-01-01

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

2009-06-15

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Synthesis and characterization of novel amphiphilic copolymer stearic acid-coupled F127 nanoparticles for nano-technology based drug delivery system.

Science.gov (United States)

Gao, Qihe; Liang, Qing; Yu, Fei; Xu, Jian; Zhao, Qihua; Sun, Baiwang

2011-12-01

Pluronic, F127, amphiphilic block copolymers, are used for several applications, including drug delivery systems. The critical micelle concentration (CMC) of F127 is about 0.26-0.8 wt% so that the utility of F127 in nano-technology based drug delivery system is limited since the nano-sized micelles could dissociate upon dilution. Herein, stearic acid (SA) was simply coupled to F127 between the carboxyl group of SA and the hydroxyl group of F127, which formed a novel copolymer named as SA-coupled F127, with significantly lower CMC. Above the CMC 6.9 × 10(-5)wt%, SA-coupled F127 self-assembled stable nanoparticles with Zeta potential -36 mV. Doxorubicin (DOX)-loaded nanoparticles were made, with drug loading (DL) 5.7 wt% and Zeta potential -36 to -39 mV, and the nanoparticles exhibited distinct shape with the size distribution from 20 to 50 nm. DOX-loaded nanoparticles were relatively stable and exhibited DOX dependant cytotoxicity toward MCF-7 cells in vitro. These results suggest that SA-coupled F127 potentially could be applied as a nano-technology based drug delivery method. Copyright © 2011 Elsevier B.V. All rights reserved.

Influence of the sputtering system's vacuum level on the properties of indium tin oxide films

International Nuclear Information System (INIS)

Zebaze Kana, M.G.; Centurioni, E.; Iencinella, D.; Summonte, C.

2006-01-01

The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Corning glass using In 2 O 3 :SnO 2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm 2 and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%

FUN3D Manual: 12.7

Science.gov (United States)

Biedron, Robert T.; Carlson, Jan-Renee; Derlaga, Joseph M.; Gnoffo, Peter A.; Hammond, Dana P.; Jones, William T.; Kleb, Bil; Lee-Rausch, Elizabeth M.; Nielsen, Eric J.; Park, Michael A.;

Surface enhanced Raman scattering in organic thin films covered with silver, indium and magnesium

International Nuclear Information System (INIS)

Salvan, Georgeta; Zahn, Dietrich R.T.; Paez, Beynor

2004-01-01

In situ resonant Raman spectroscopy was applied for the investigation of the interface formation between silver, indium and magnesium with polycrystalline organic semiconductor layers of 3,4,9,10-perylene tetra-carboxylic dianhydride (PTCDA). The spectral region of internal as well as external vibrational modes was recorded in order to achieve information related to the chemistry and the structure of the interface as well as to morphology of the metal layer. The experiments benefit from a strong enhancement of the internal mode scattering intensities which is induced by the rough morphology of deposited metals leading to surface enhanced Raman scattering (SERS). The external modes, on the other hand, are attenuated at different rates indicating that the diffusion of the metal atoms into the crystalline layers is highest for indium and lowest for magnesium

DX centers in indium aluminum arsenide heterostructures

Science.gov (United States)

Sari, Huseyin

DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

Influence of thermal treatment in N{sub 2} atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films

Energy Technology Data Exchange (ETDEWEB)

Stroescu, H.; Anastasescu, M.; Preda, S.; Nicolescu, M.; Stoica, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409, RO-77125, Bucharest-Magurele (Romania); Kampylafka, V.; Aperathitis, E. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Gartner, M., E-mail: mgartner@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

2013-08-31

We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N{sub 2} atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300–400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment. - Highlights: ► Stability of the films can be monitored by experimental ellipsometric spectra. ► The refractive index of indium tin oxide film on 0.3–30 μm range is reported. ► Si(100) substrate induces rougher film surfaces than Si(111). ► Rapid thermal annealing and normal thermal treatment lead to stable conductive film. ► The samples have a higher preferential orientation after rapid thermal annealing.

An approach for measuring the {sup 129}I/{sup 127}I ratio in fish samples

Energy Technology Data Exchange (ETDEWEB)

Kusuno, Haruka, E-mail: kusuno@um.u-tokyo.ac.jp [The University Museum, The University of Tokyo, 3-7-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Matsuzaki, Hiroyuki [The University Museum, The University of Tokyo, 3-7-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Nagata, Toshi; Miyairi, Yosuke; Yokoyama, Yusuke [Atmosphere and Ocean Research Institute, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa-shi, Chiba 277-8564 (Japan); Ohkouchi, Naohiko [Japan Agency for Marine-Earth Science and Technology, 2-15, Natsushima-cho, Yokosuka-city, Kanagawa 237-0061 (Japan)

2015-10-15

The {sup 129}I/{sup 127}I ratio in marine fish samples was measured employing accelerator mass spectrometry. The measurement was successful because of the low experimental background of {sup 129}I. Pyrohydrolysis was applied to extract iodine from fish samples. The experimental background of pyrohydrolysis was checked carefully and evaluated as 10{sup 4}–10{sup 5} atoms {sup 129}I/combustion. The methodology employed in the present study thus required only 0.05–0.2 g of dried fish samples. The methodology was then applied to obtain the {sup 129}I/{sup 127}I ratio of marine fish samples collected from the Western Pacific Ocean as (0.63–1.2) × 10{sup −10}. These values were similar to the ratio for the surface seawater collected at the same station, 0.4 × 10{sup −10}. The {sup 129}I/{sup 127}I ratio of IAEA-414, which was a mix of fish from the Irish Sea and the North Sea, was also measured and determined as 1.82 × 10{sup −7}. Consequently, fish from the Western Pacific Ocean and the North Sea were distinguished by their {sup 129}I/{sup 127}I ratios. The {sup 129}I/{sup 127}I ratio is thus a direct indicator of the area of habitat of fish.

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Ab-initio modelling of thermodynamics and kinetics of point defects in indium oxide

International Nuclear Information System (INIS)

Agoston, Peter; Klein, Andreas; Albe, Karsten; Erhart, Paul

2008-01-01

The electrical and optical properties of indium oxide films strongly vary with the processing parameters. Especially the oxygen partial pressure and temperature determine properties like electrical conductivity, composition and transparency. Since this material owes its remarkable properties like the intrinsic n-type conductivity to its defect chemistry, it is important to understand both, the equilibrium defect thermodynamics and kinetics of the intrinsic point defects. In this contribution we present a defect model based on DFT total energy calculations using the GGA+U method. Further, the nudged elastic band method is employed in order to obtain a set of migration barriers for each defect species. Due to the complicated crystal structure of indium oxide a Kinetic Monte-Carlo algorithm was implemented, which allows to determine diffusion coefficients. The bulk tracer diffusion constant is predicted as a function of oxygen partial pressure, Fermi level and temperature for the pure material