Kinetic calculation of plasma deposition in castellated tile gaps

International Nuclear Information System (INIS)

Dejarnac, R.; Gunn, J.P.

2007-01-01

Plasma-facing divertors and limiters are armoured with castellated tiles to withstand intense heat fluxes. Recent experimental studies show that a non-negligible amount of deuterium is deposited in the gaps between tiles. We present here a numerical study of plasma deposition in this critical region. For this purpose we have developed a particle-in-cell code with realistic boundary conditions determined from kinetic calculations. We find a strong asymmetry of plasma deposition into the gaps. A significant fraction of the plasma influx is expelled from the gap to be deposited on the leading edge of the downstream tile

Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

International Nuclear Information System (INIS)

Kim, H.; Detavenier, C.; Straten, O. van der; Rossnagel, S.M.; Kellock, A.J.; Park, D.-G.

2005-01-01

TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaN x thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl 5

Interpretation of plasma impurity deposition probes. Analytic approximation

Science.gov (United States)

Stangeby, P. C.

1987-10-01

Insertion of a probe into the plasma induces a high speed flow of the hydrogenic plasma to the probe which, by friction, accelerates the impurity ions to velocities approaching the hydrogenic ion acoustic speed, i.e., higher than the impurity ion thermal speed. A simple analytic theory based on this effect provides a relation between impurity fluxes to the probe Γimp and the undisturbed impurity ion density nimp, with the hydrogenic temperature and density as input parameters. Probe size also influences the collection process and large probes are found to attract a higher flux density than small probes in the same plasma. The quantity actually measured, cimp, the impurity atom surface density (m-2) net-deposited on the probe, is related to Γimp and thus to nimp by taking into account the partial removal of deposited material caused by sputtering and the redeposition process.

Characterization of Fe-based alloy coating deposited by supersonic plasma spraying

International Nuclear Information System (INIS)

Piao, Zhong-yu; Xu, Bin-shi; Wang, Hai-dou; Wen, Dong-hui

2013-01-01

Highlights: • Fe-based coating exhibited few oxides, high density and bond strength. • Amorphous/nanocrystalline phases were found in the coating. • Formation mechanism of excellent coating was investigated. -- Abstract: The objective of the present study is to characterize the Fe-based alloy coating deposited by the supersonic plasma spraying process. The condition of the melting particles was in situ monitored. The microstructure of the coating was examined by scanning electron microscope and high resolution transmission electron microscope. The phase composition was examined by X-ray diffraction. The microhardness and porosity were also measured, respectively. Results show the prepared coatings have excellent properties, such as few oxides, high microhardness and a low porosity amount. At the same time, a mass of amorphous/nanocrystalline phases was found in the coating. The mechanism of the formation of amorphous/nanocrystalline phases was investigated. The appropriate material composition of spraying material and flash set process of plasma spraying are the key factors. Moreover, the mechanism for oxidation resistance is also investigated, where the separation between melting metal and oxygen by the formation of SiO 2 films is the key factor

Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

Energy Technology Data Exchange (ETDEWEB)

Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

2005-05-16

A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

Directory of Open Access Journals (Sweden)

Januś M.

2015-06-01

Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

Thermal plasma chemical vapor deposition

International Nuclear Information System (INIS)

Heberlein, J.; Pfender, E.

1993-01-01

Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

Development of solid oxide fuel cells by applying DC and RF plasma deposition technologies

Energy Technology Data Exchange (ETDEWEB)

Schiller, G.; Henne, R.; Lang, M.; Mueller, M. [Deutsches Zentrum fuer Luft- und Raumfahrt (DLR), Institut fuer Technische Thermodynamik, Postfach 800370, 70503 Stuttgart (Germany)

2004-04-01

Based on advanced plasma deposition technology with both DC and RF plasmas DLR Stuttgart has developed a concept of a planar SOFC with consecutive deposition of all layers of a thin-film cell onto a porous metallic substrate support. This concept is an alternative approach to conventionally used sintering techniques for SOFC fabrication without needing any sintering steps or other thermal post-treatment. Furthermore, is has the potential to be developed into an automated continous production process. For both stationary and mobile applications, adequate stack designs and stack technologies have been developed. Future development work will focus on light-weight stacks to be applied as an Auxillary Power Unit (APU) for on-board electricity supply in passenger cars and airplanes. This paper describes the plasma deposition technologies used for cell fabrication and the DLR spray concept including the resulting stack designs. The current status of development and recent progress with respect to materials development and electrochemical characterization of single cells and short-stacks is presented. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Process maps for plasma spray. Part II: Deposition and properties

International Nuclear Information System (INIS)

XIANGYANG, JIANG; MATEJICEK, JIRI; KULKARNI, ANAND; HERMAN, HERBERT; SAMPATH, SANJAY; GILMORE, DELWYN L.; NEISER A, RICHARD Jr.

2000-01-01

This is the second paper of a two part series based on an integrated study carried out at the State University of New York at Stony Brook and Sandia National Laboratories. The goal of the study is the fundamental understanding of the plasma-particle interaction, droplet/substrate interaction, deposit formation dynamics and microstructure development as well as the deposit property. The outcome is science-based relationships, which can be used to link processing to performance. Molybdenum splats and coatings produced at 3 plasma conditions and three substrate temperatures were characterized. It was found that there is a strong mechanical/thermal interaction between droplet and substrate, which builds up the coatings/substrate adhesion. Hardness, thermal conductivity, and modulus increase, while oxygen content and porosity decrease with increasing particle velocity. Increasing deposition temperature resulted in dramatic improvement in coating thermal conductivity and hardness as well as increase in coating oxygen content. Indentation reveals improved fracture resistance for the coatings prepared at higher deposition temperature. Residual stress was significantly affected by deposition temperature, although not significant by particle energy within the investigated parameter range. Coatings prepared at high deposition temperature with high-energy particles suffered considerably less damage in wear tests. Possible mechanisms behind these changes are discussed within the context of relational maps which are under development

Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective

International Nuclear Information System (INIS)

Anders, Andre

2007-01-01

Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, cathodic arc deposition was established as an energetic condensation process, first in the former Soviet Union in the 1970s, and in the 1980s in the Western Hemisphere. About a dozen various ion-based coating technologies evolved in the last decades, all characterized by specific plasma or ion generation processes. Gridded and gridless ion sources were taken from space propulsion and applied to thin film deposition. Modeling and simulation have helped to make plasma and ions effects to be reasonably well understood. Yet--due to the complex, often non-linear and non-equilibrium nature of plasma and surface interactions--there is still a place for the experience plasma 'sourcerer'

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-04-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

OpenAIRE

Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

2015-01-01

A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

Plasma deposition by discharge in powder

International Nuclear Information System (INIS)

El-Gamal, H.A.; El-Tayeb, H.A.; Abd El-Moniem, M.; Masoud, M.M.

2000-01-01

Different types of material powders have been fed to the breach of a coaxial discharge. The coaxial discharge is powered from a 46.26 mu F, 24 KV capacitor bank. When the discharge takes place at the breach, the powder is heated and ionized to form a sheath of its material. The plasma sheath is ejected from the discharge zone with high velocity. The plasma sheath material is deposited on a glass substrate. It has been found from scanning electron microscope (SEM) analysis that the deposited material is almost homogenous for ceramic and graphite powders. The grain size is estimated to be the order of few microns. To measure the deposited material thickness the microdensitometer and a suitable arrangement of a laser interferometer and an optical microscope are used. It has also been found that deposited material thickness depends on the discharge number of shots and the capacitor bank energy

Modelling of diamond deposition microwave cavity generated plasmas

International Nuclear Information System (INIS)

Hassouni, K; Silva, F; Gicquel, A

2010-01-01

Some aspects of the numerical modelling of diamond deposition plasmas generated using microwave cavity systems are discussed. The paper mainly focuses on those models that allow (i) designing microwave cavities in order to optimize the power deposition in the discharge and (ii) estimating the detailed plasma composition in the vicinity of the substrate surface. The development of hydrogen plasma models that may be used for the self-consistent simulation of microwave cavity discharge is first discussed. The use of these models for determining the plasma configuration, composition and temperature is illustrated. Examples showing how to use these models in order to optimize the cavity structure and to obtain stable process operations are also given. A transport model for the highly reactive H 2 /CH 4 moderate pressure discharges is then presented. This model makes possible the determination of the time variation of plasma composition and temperature on a one-dimensional domain located on the plasma axis. The use of this model to analyse the transport phenomena and the chemical process in diamond deposition plasmas is illustrated. The model is also utilized to analyse pulsed mode discharges and the benefit they can bring as far as diamond growth rate and quality enhancement are concerned. We, in particular, show how the model can be employed to optimize the pulse waveform in order to improve the deposition process. Illustrations on how the model can give estimates of the species density at the growing substrate surface over a wide domain of deposition conditions are also given. This brings us to discuss the implication of the model prediction in terms of diamond growth rate and quality. (topical review)

Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

2010-12-15

In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

Plasma effects in aligned carbon nanoflake growth by plasma-enhanced hot filament chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China); Cheng, Q.J., E-mail: qijin.cheng@xmu.edu.cn [School of Energy Research, Xiamen University, Xiamen 361005 (China); Ostrikov, K. [Plasma Nanoscience Center Australia (PNCA), Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, PO Box 218, Lindfield 2070, NSW (Australia); Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney 2006, NSW (Australia)

2015-01-15

Highlights: • Plasma-specific effects in the growth of carbon nanoflakes (CNFs) are studied. • Electic field in the plasma sheath promotes separation of CNFs from the substrate. • The orentention of GNFs is related to the combined electic force and growth effects. • The high growth grates of aligned GNFs are plasma-related. - Abstract: Carbon nanofilms are directly grown on silicon substrates by plasma-enhanced hot filament chemical vapor deposition in methane environment. It is shown that the nanofilms are composed of aligned carbon nanoflakes by extensive investigation of experimental results of field emission scanning electron microscopy, micro-Raman spectroscopy and transmission electron microscopy. In comparison with the graphene-like films grown without plasmas, the carbon nanoflakes grow in an alignment mode and the growth rate of the films is increased. The effects of the plasma on the growth of the carbon nanofilms are studied. The plasma plays three main effects of (1) promoting the separation of the carbon nanoflakes from the silicon substrate, (2) accelerating the motion of hydrocarbon radicals, and (3) enhancing the deposition of hydrocarbon ions onto the substrate surface. Due to these plasma-specific effects, the carbon nanofilms can be formed from the aligned carbon nanoflakes with a high rate. These results advance our knowledge on the synthesis, properties and applications of graphene-based materials.

Characterisation by optical spectroscopy of a plasma of depositions of thins layers

International Nuclear Information System (INIS)

Chouan, Yannick

1984-01-01

This research thesis reports a work which, by correlating emission and absorption spectroscopic measurements with properties of deposited thin layers, aimed at being a complement to works undertaken by a team in charge of the realisation of a flat screen. In a first part, the author reports the study of a cathodic pulverisation of a silicon target. He describes the experimental set-up, presents correlations obtained between plasma electric properties (target self-polarisation voltage), emission spectroscopic measurements (line profile and intensity) and absorption spectroscopic measurements (density of metastables), and the composition of deposited thin layers for two reactive pulverisation plasmas (Ar-H_2 and Ar-CH_4). The second part addresses the relationship between experimental conditions and spectroscopic characteristics (emission and absorption lines, excitation and rotation temperature) of a He-SiH_4 plasma. The author also determined the most adapted spectroscopic measurements to the 'control' of deposition, and which result in an optimisation of electronic properties and of the deposition rate for the hydrogenated amorphous silicon. The third part reports the characterisation of depositions. Electric and optic measurements are reported. Then, for both deposition techniques, the author relates the influence of experimental conditions to deposition properties and to spectroscopic diagnosis. The author finally presents static characteristics of a thin-layer-based transistor

Plasma deposited fluorinated films on porous membranes

Energy Technology Data Exchange (ETDEWEB)

Gancarz, Irena [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Bryjak, Marek, E-mail: marek.bryjak@pwr.edu.pl [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawski, Jan; Wolska, Joanna [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawa, Joanna; Kujawski, Wojciech [Nicolaus Copernicus University, Faculty of Chemistry, 7 Gagarina St., 87-100 Torun (Poland)

2015-02-01

75 KHz plasma was used to modify track etched poly(ethylene terephthalate) membranes and deposit on them flouropolymers. Two fluorine bearing monomers were used: perflourohexane and hexafluorobenzene. The modified surfaces were analyzed by means of attenuated total reflection infra-red spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and wettability. It was detected that hexaflourobenxene deposited to the larger extent than perflourohaxane did. The roughness of surfaces decreased when more fluoropolymer was deposited. The hydrophobic character of surface slightly disappeared during 20-days storage of hexaflourobenzene modified membrane. Perfluorohexane modified membrane did not change its character within 120 days after modification. It was expected that this phenomenon resulted from post-reactions of oxygen with radicals in polymer deposits. The obtained membranes could be used for membrane distillation of juices. - Highlights: • Plasma deposited hydrophobic layer of flouropolymers. • Deposition degree affects the surface properties. • Hydrohilization of surface due to reaction of oxygen with entrapped radicals. • Possibility to use modified porous membrane for water distillation and apple juice concentration.

Transport and deposition of injected hydrocarbons in plasma generator PSI-2

International Nuclear Information System (INIS)

Bohmeyer, W.; Naujoks, D.; Markin, A.; Arkhipov, I.; Koch, B.; Schroeder, D.; Fussmann, G.

2005-01-01

The transport and deposition of hydrocarbons were studied in the stationary plasma of plasma generator PSI-2. CH 4 or C 2 H 4 were injected into the plasma at different positions in the target chamber. After an interaction between the plasma and the hydrocarbons, different species are produced, some of them having high sticking probabilities and forming a:CH films on a temperature controlled collector. The film growth is studied in situ for different plasma parameters. The 3D Monte Carlo code ERO including three different sets of atomic data is used to describe the formation of hydrocarbon films

Hydrogen plasma treatment of silicon dioxide for improved silane deposition.

Science.gov (United States)

Gupta, Vipul; Madaan, Nitesh; Jensen, David S; Kunzler, Shawn C; Linford, Matthew R

2013-03-19

We describe a method for plasma cleaning silicon surfaces in a commercial tool that removes adventitious organic contamination and enhances silane deposition. As shown by wetting, ellipsometry, and XPS, hydrogen, oxygen, and argon plasmas effectively clean Si/SiO2 surfaces. However, only hydrogen plasmas appear to enhance subsequent low-pressure chemical vapor deposition of silanes. Chemical differences between the surfaces were confirmed via (i) deposition of two different silanes: octyldimethylmethoxysilane and butyldimethylmethoxysilane, as evidenced by spectroscopic ellipsometry and wetting, and (ii) a principal components analysis (PCA) of TOF-SIMS data taken from the different plasma-treated surfaces. AFM shows no increase in surface roughness after H2 or O2 plasma treatment of Si/SiO2. The effects of surface treatment with H2/O2 plasmas in different gas ratios, which should allow greater control of surface chemistry, and the duration of the H2 plasma (complete surface treatment appeared to take place quickly) are also presented. We believe that this work is significant because of the importance of silanes as surface functionalization reagents, and in particular because of the increasing importance of gas phase silane deposition.

Solid oxide fuel cell electrolytes produced via very low pressure suspension plasma spray and electrophoretic deposition

Science.gov (United States)

Fleetwood, James D.

Solid oxide fuel cells (SOFCs) are a promising element of comprehensive energy policies due to their direct mechanism for converting the oxidization of fuel, such as hydrogen, into electrical energy. Both very low pressure plasma spray and electrophoretic deposition allow working with high melting temperature SOFC suspension based feedstock on complex surfaces, such as in non-planar SOFC designs. Dense, thin electrolytes of ideal composition for SOFCs can be fabricated with each of these processes, while compositional control is achieved with dissolved dopant compounds that are incorporated into the coating during deposition. In the work reported, sub-micron 8 mole % Y2O3-ZrO2 (YSZ) and gadolinia-doped ceria (GDC), powders, including those in suspension with scandium-nitrate dopants, were deposited on NiO-YSZ anodes, via very low pressure suspension plasma spray (VLPSPS) at Sandia National Laboratories' Thermal Spray Research Laboratory and electrophoretic deposition (EPD) at Purdue University. Plasma spray was carried out in a chamber held at 320 - 1300 Pa, with the plasma composed of argon, hydrogen, and helium. EPD was characterized utilizing constant current deposition at 10 mm electrode separation, with deposits sintered from 1300 -- 1500 °C for 2 hours. The role of suspension constituents in EPD was analyzed based on a parametric study of powder loading, powder specific surface area, polyvinyl butyral (PVB) content, polyethyleneimine (PEI) content, and acetic acid content. Increasing PVB content and reduction of particle specific surface area were found to eliminate the formation of cracks when drying. PEI and acetic acid content were used to control suspension stability and the adhesion of deposits. Additionally, EPD was used to fabricate YSZ/GDC bilayer electrolyte systems. The resultant YSZ electrolytes were 2-27 microns thick and up to 97% dense. Electrolyte performance as part of a SOFC system with screen printed LSCF cathodes was evaluated with peak

Floating harmonic probe measurements in the low-temperature plasma jet deposition system

Czech Academy of Sciences Publication Activity Database

Zanáška, M.; Hubička, Zdeněk; Čada, Martin; Kudrna, Pavel; Tichý, M.

2018-01-01

Roč. 51, č. 2 (2018), s. 1-8, č. článku 025205. ISSN 0022-3727 R&D Projects: GA ČR(CZ) GA15-00863S Institutional support: RVO:68378271 Keywords : plasma diagnostic * floating harmonic probe * Langmuir probe * hollow cathode * non-conducting film deposition Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics ) Impact factor: 2.588, year: 2016

Diamond deposition using a planar radio frequency inductively coupled plasma

Science.gov (United States)

Bozeman, S. P.; Tucker, D. A.; Stoner, B. R.; Glass, J. T.; Hooke, W. M.

1995-06-01

A planar radio frequency inductively coupled plasma has been used to deposit diamond onto scratched silicon. This plasma source has been developed recently for use in large area semiconductor processing and holds promise as a method for scale up of diamond growth reactors. Deposition occurs in an annulus which coincides with the area of most intense optical emission from the plasma. Well-faceted diamond particles are produced when the substrate is immersed in the plasma.

A possible method of carbon deposit mapping on plasma facing components using infrared thermography

International Nuclear Information System (INIS)

Mitteau, R.; Spruytte, J.; Vallet, S.; Travere, J.M.; Guilhem, D.; Brosset, C.

2007-01-01

The material eroded from the surface of plasma facing components is redeposited partly close to high heat flux areas. At these locations, the deposit is heated by the plasma and the deposition pattern evolves depending on the operation parameters. The mapping of the deposit is still a matter of intense scientific activity, especially during the course of experimental campaigns. A method based on the comparison of surface temperature maps, obtained in situ by infrared cameras and by theoretical modelling is proposed. The difference between the two is attributed to the thermal resistance added by deposited material, and expressed as a deposit thickness. The method benefits of elaborated imaging techniques such as possibility theory and fuzzy logics. The results are consistent with deposit maps obtained by visual inspection during shutdowns

Plasma and process characterization of high power magnetron physical vapor deposition with integrated plasma equipment--feature profile model

International Nuclear Information System (INIS)

Zhang Da; Stout, Phillip J.; Ventzek, Peter L.G.

2003-01-01

High power magnetron physical vapor deposition (HPM-PVD) has recently emerged for metal deposition into deep submicron features in state of the art integrated circuit fabrication. However, the plasma characteristics and process mechanism are not well known. An integrated plasma equipment-feature profile modeling infrastructure has therefore been developed for HPM-PVD deposition, and it has been applied to simulating copper seed deposition with an Ar background gas for damascene metalization. The equipment scale model is based on the hybrid plasma equipment model [M. Grapperhaus et al., J. Appl. Phys. 83, 35 (1998); J. Lu and M. J. Kushner, ibid., 89, 878 (2001)], which couples a three-dimensional Monte Carlo sputtering module within a two-dimensional fluid model. The plasma kinetics of thermalized, athermal, and ionized metals and the contributions of these species in feature deposition are resolved. A Monte Carlo technique is used to derive the angular distribution of athermal metals. Simulations show that in typical HPM-PVD processing, Ar + is the dominant ionized species driving sputtering. Athermal metal neutrals are the dominant deposition precursors due to the operation at high target power and low pressure. The angular distribution of athermals is off axis and more focused than thermal neutrals. The athermal characteristics favor sufficient and uniform deposition on the sidewall of the feature, which is the critical area in small feature filling. In addition, athermals lead to a thick bottom coverage. An appreciable fraction (∼10%) of the metals incident to the wafer are ionized. The ionized metals also contribute to bottom deposition in the absence of sputtering. We have studied the impact of process and equipment parameters on HPM-PVD. Simulations show that target power impacts both plasma ionization and target sputtering. The Ar + ion density increases nearly linearly with target power, different from the behavior of typical ionized PVD processing. The

Plasma deposition of refractories

International Nuclear Information System (INIS)

Kudinov, V.V.; Ivanov, V.M.

1981-01-01

The problems of deposition, testing and application of plasma coating of refractory metals and oxides are considered. The process fundamentals, various manufacturing procedures and equipment for their realization are described in detail. Coating materials are given (Al, Mg, Al 2 O 3 , ZrO 2 , MgAlO 4 ) which are used in reactor engineering and their designated purposes are shown [ru

Ultra-small platinum and gold nanoparticles by arc plasma deposition

International Nuclear Information System (INIS)

Kim, Sang Hoon; Jeong, Young Eun; Ha, Heonphil; Byun, Ji Young; Kim, Young Dok

2014-01-01

Highlights: • Ultra-small (<2 nm) and bigger platinum and gold nanoparticles were produced by arc plasma deposition (APD). • Size and coverage of deposited nanoparticles were easily controlled with APD parameters. • Crystalline structures of deposited nanoparticles emerged only when the particle size was bigger than ∼2 nm. - Abstract: Ultra-small (<2 nm) nanoparticles of platinum and gold were produced by arc plasma deposition (APD) in a systematic way and the deposition behavior was studied. Nanoparticles were deposited on two dimensional amorphous carbon and amorphous titania thin films and characterized by transmission electron microscopy (TEM). Deposition behavior of nanoparticles by APD was studied with discharge voltage (V), discharge condenser capacitance (C), and the number of plasma pulse shots (n) as controllable parameters. The average size of intrinsic nanoparticles generated by APD process was as small as 0.9 nm and deposited nanoparticles began to have crystal structures from the particle size of about 2 nm. V was the most sensitive parameter to control the size and coverage of generated nanoparticles compared to C and n. Size of APD deposited nanoparticles was also influenced by the nature of evaporating materials and substrates

Magnetic filtered plasma deposition and implantation technique

CERN Document Server

Zhang Hui Xing; Wu Xian Ying

2002-01-01

A high dense metal plasma can be produced by using cathodic vacuum arc discharge technique. The microparticles emitted from the cathode in the metal plasma can be removed when the metal plasma passes through the magnetic filter. It is a new technique for making high quality, fine and close thin films which have very widespread applications. The authors describe the applications of cathodic vacuum arc technique, and then a filtered plasma deposition and ion implantation system as well as its applications

Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

International Nuclear Information System (INIS)

Nguyen, S.V.; Kerbaugh, M.

1988-01-01

This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

International Nuclear Information System (INIS)

Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

2006-01-01

Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

Investigation and application of microwave electron cyclotron resonance plasma physical vapour deposition

International Nuclear Information System (INIS)

Ren Zhaoxing; Sheng Yanya; Shi Yicai; Wen Haihu; Cao Xiaowen

1991-06-01

The evaporating deposition of Ti film and Cu film by using microwave electron cyclotron resonance (ECR) technique was investigated. It deposition rate was about 50 nm/min and the temperature of the substrate was 50∼150 deg C. The thin amorphous films with strong adherent force were obtained. The sputtering deposition with ECR plasma was studied by employing higher plasma density and ionicity and negative substrate potential to make YBaCuO superconducting film. Its film was compact and amorphous with a thickness of 1.0 μm and the deposition rate was about 10 nm/min. The results show that this technique can initiate a high density and high ionicity plasma at lower gas pressure (10 -2 ∼10 -3 Pa). This plasma is the most suitable plasma source in thin film deposition process and surface treatment technique

Deposition of polymeric perfluored thin films in proton ionic membranes by plasma processes

International Nuclear Information System (INIS)

Polak, Peter Lubomir; Mousinho, Ana Paula; Ordonez, Nelson; Silva Zambom, Luis da; Mansano, Ronaldo Domingues

2007-01-01

In this work the surfaces of polymeric membranes based on Nafion (proton conducting material), used in proton exchange membranes fuel cells (PEMFC) had been modified by plasma deposition of perfluored polymers, in order to improve its functioning in systems of energy generation (fuel cells). The deposition increases the chemical resistance of the proton ionic polymers without losing the electrical properties. The processing of the membranes also reduces the permeability of the membranes to the alcohols (methanol and ethanol), thus preventing poisoning of the fuel cell. The processing of the membranes of Nafion was carried through in a system of plasma deposition using a mixture of CF 4 and H 2 gases. The plasma processing was made mainly to increase the chemical resistance and result in hydrophobic surfaces. The Fourier transformed infrared (FTIR) technique supplies a spectrum with information about the CF n bond formation. Through the Rutherford back scattering (RBS) technique it was possible to verify the deposition rate of the polymeric layer. The plasma process with composition of 60% of CF 4 and 40% of H 2 presented the best deposition rate. By the spectrum analysis for the optimized configuration, it was possible to verify that the film deposition occurred with a thickness of 90 nm, and fluorine concentration was nearly 30%. Voltammetry made possible to verify that the fluorination increases the membranes chemical resistance, improving the stability of Nafion, becoming an attractive process for construction of fuel cells

Abnormal energy deposition on the wall through plasma disruptions

International Nuclear Information System (INIS)

Yamazaki, K.; Schmidt, G.L.

1984-07-01

The dissipation of plasma kinetic and magnetic energy during sawtooth oscillstions and disruptions in tokamaks is analyzed using Kadomtsev's disruption model and the plasma-circuit equations. New simple scalings of several characteristic times are obtained for sawteeth and for thermal and magnetic energy quenches of disruptions. The abnormal energy deposition on the wall during major or minor disruptions, estimated from this analysis, is compared with bolometric measurements in the PDX tokamak. Especially, magnetic energy dissipation during current termination period is shown to be reduced by the strong coupling of the plasma current with external circuits. These analyses are found to be useful to predict the phenomenological behavior of plasma disruptions in large future tokamaks, and to estimate abnormal heat deposition on the wall during plasma disruptions. (author)

BIRTH: a beam deposition code for non-circular tokamak plasmas

International Nuclear Information System (INIS)

Otsuka, Michio; Nagami, Masayuki; Matsuda, Toshiaki

1982-09-01

A new beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical cpu time on a DEC-10 computer is 10 - 20 seconds and 5 - 10 seconds with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo codes. The power deposition profile calculated by this code is in good agreement with that calculated by a Monte Carlo code. (author)

Improvement of a microwave ECR plasma source for the plasma immersion ion implantation and deposition process

International Nuclear Information System (INIS)

Wu Hongchen; Zhang Huafang; Peng Liping; Jiang Yanli; Ma Guojia

2004-01-01

The Plasma Immersion Ion Implantation and Deposition (PIII and D) process has many advantages over the pure plasma immersion ion implantation or deposition. It can compensate for or eliminate the disadvantages of the shallow modification layer (for PIII) and increase the bond strength of the coating (of deposition). For this purpose, a new type of microwave plasma source used in the PIII and D process was developed, composed of a vacuum bend wave guide and a special magnetic circuit, so that the coupling window was protected from being deposited with a coating and bombarded by high-energy particles. So the life of the window is increased. To enhance the bonding between the coating and substrate a new biasing voltage is applied to the work piece so that the implantation and deposition (or hybrid process) can be completed in one vacuum cycle

In-situ XPS analysis of oxidized and reduced plasma deposited ruthenium-based thin catalytic films

Science.gov (United States)

Balcerzak, Jacek; Redzynia, Wiktor; Tyczkowski, Jacek

2017-12-01

A novel in-situ study of the surface molecular structure of catalytically active ruthenium-based films subjected to the oxidation (in oxygen) and reduction (in hydrogen) was performed in a Cat-Cell reactor combined with a XPS spectrometer. The films were produced by the plasma deposition method (PEMOCVD). It was found that the films contained ruthenium at different oxidation states: metallic (Ru0), RuO2 (Ru+4), and other RuOx (Ru+x), of which content could be changed by the oxidation or reduction, depending on the process temperature. These results allow to predict the behavior of the Ru-based catalysts in different redox environments.

Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

2015-09-15

A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

Plasma sprayed and electrospark deposited zirconium metal diffusion barrier coatings

International Nuclear Information System (INIS)

Hollis, Kendall J.; Pena, Maria I.

2010-01-01

Zirconium metal coatings applied by plasma spraying and electrospark deposition (ESD) have been investigated for use as diffusion barrier coatings on low enrichment uranium fuel for research nuclear reactors. The coatings have been applied to both stainless steel as a surrogate and to simulated nuclear fuel uranium-molybdenum alloy substrates. Deposition parameter development accompanied by coating characterization has been performed. The structure of the plasma sprayed coating was shown to vary with transferred arc current during deposition. The structure of ESD coatings was shown to vary with the capacitance of the deposition equipment.

Nanostructured Photocatalytic TiO2 Coating Deposited by Suspension Plasma Spraying with Different Injection Positions

Science.gov (United States)

Liu, Xuezhang; Wen, Kui; Deng, Chunming; Yang, Kun; Deng, Changguang; Liu, Min; Zhou, Kesong

2018-02-01

High plasma power is beneficial for the deposition efficiency and adhesive strength of suspension-sprayed photocatalytic TiO2 coatings, but it confronts two challenges: one is the reduced activity due to the critical phase transformation of anatase into rutile, and the other is fragmented droplets which cannot be easily injected into the plasma core. Here, TiO2 coatings were deposited at high plasma power and the position of suspension injection was varied with the guidance of numerical simulation. The simulation was based on a realistic three-dimensional time-dependent numerical model that included the inside and outside of torch regions. Scanning electron microscopy was performed to study the microstructure of the TiO2 coatings, whereas x-ray diffraction was adopted to analyze phase composition. Meanwhile, photocatalytic activities of the manufactured TiO2 coatings were evaluated by the degradation of an aqueous solution of methylene blue dye. Fragmented droplets were uniformly injected into the plasma jet, and the solidification pathway of melting particles was modified by varying the position of suspension injection. A nanostructured TiO2 coating with 93.9% anatase content was obtained at high plasma power (48.1 kW), and the adhesive coating bonding to stainless steel exhibited the desired photocatalytic activity.

Enhanced surface functionality via plasma modification and plasma deposition techniques to create more biologically relevant materials

Science.gov (United States)

Shearer, Jeffrey C.

Functionalizing nanoparticles and other unusually shaped substrates to create more biologically relevant materials has become central to a wide range of research programs. One of the primary challenges in this field is creating highly functionalized surfaces without modifying the underlying bulk material. Traditional wet chemistry techniques utilize thin film depositions to functionalize nanomaterials with oxygen and nitrogen containing functional groups, such as --OH and --NHx. These functional groups can serve to create surfaces that are amenable to cell adhesion or can act as reactive groups for further attachment of larger structures, such as macromolecules or antiviral agents. Additional layers, such as SiO2, are often added between the nanomaterial and the functionalized coating to act as a barrier films, adhesion layers, and to increase overall hydrophilicity. However, some wet chemistry techniques can damage the bulk material during processing. This dissertation examines the use of plasma processing as an alternative method for producing these highly functionalized surfaces on nanoparticles and polymeric scaffolds through the use of plasma modification and plasma enhanced chemical vapor deposition techniques. Specifically, this dissertation will focus on (1) plasma deposition of SiO2 barrier films on nanoparticle substrates; (2) surface functionalization of amine and alcohol groups through (a) plasma co-polymerization and (b) plasma modification; and (3) the design and construction of plasma hardware to facilitate plasma processing of nanoparticles and polymeric scaffolds. The body of work presented herein first examines the fabrication of composite nanoparticles by plasma processing. SiOxC y and hexylamine films were coated onto TiO2 nanoparticles to demonstrate enhanced water dispersion properties. Continuous wave and pulsed allyl alcohol plasmas were used to produce highly functionalized Fe2 O3 supported nanoparticles. Specifically, film composition was

Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

Energy Technology Data Exchange (ETDEWEB)

Donker, M.N. van den

2006-07-01

Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

Abnormal energy deposition on the wall through plasma disruptions

International Nuclear Information System (INIS)

Yamazaki, K.; Schmidt, G.L.

1984-01-01

The dissipation of plasma kinetic and magnetic energy during sawtooth oscillations and disruptions in tokamak is analyzed using Kadomtsev's disruption model and the plasma-circuit equations. New simple scalings of several characteristic times are obtained for sawteeth and for thermal and magnetic energy quenches of disruptions. The abnormal energy deposition on the wall during major or minor disruptions, estimated from this analysis, is compared with bolometric measurements in the PDX tokamak. Especially, magnetic energy dissipation during the current termination period is shown to be reduced by the strong coupling of the plasma current with external circuits. These analyses are found to be useful to predict the phenomenological behavior of plasma disruptions in large future tokamaks, and to estimate abnormal heat deposition on the wall during plasma disruptions. (orig.)

Surface characterization of hydrophobic thin films deposited by inductively coupled and pulsed plasmas

International Nuclear Information System (INIS)

Kim, Youngsoo; Lee, Ji-Hye; Kim, Kang-Jin; Lee, Yeonhee

2009-01-01

Different fluorocarbon thin films were deposited on Si substrates using a plasma-polymerization method. Fluorine-containing hydrophobic thin films were obtained by inductively coupled plasma (ICP) and pulsed plasma (PP) with a mixture of fluorocarbon precursors C 2 F 6 , C 3 F 8 , and c-C 4 F 8 and the unsaturated hydrocarbons of C 2 H 2 . The influence on the fluorocarbon surfaces of the process parameters for plasma polymerization, including the gas ratio and the plasma power, were investigated under two plasma-polymerized techniques with different fluorocarbon gas precursors. The hydrophobic properties, surface morphologies, and chemical compositions were elucidated using water contact angle measurements, field emission-scanning electron microscope, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). In this study, the ICP technique provides coarser grained films and more hydrophobic surfaces as well as a higher deposition rate compared to the PP technique. XPS, FT-IR, and TOF-SIMS analyses indicated that the ICP technique produced more fluorine-related functional groups, including CF 2 and CF 3 , on the surface. From the curve-fitted XPS results, fluorocarbon films grown under ICP technique exhibited less degree of cross-linking and higher CF 2 concentrations than those grown under PP technique.

Reactive physical vapor deposition of TixAlyN: Integrated plasma-surface modeling characterization

International Nuclear Information System (INIS)

Zhang Da; Schaeffer, J.K.

2004-01-01

Reactive physical vapor deposition (RPVD) has been widely applied in the microelectronic industry for producing thin films. Fundamental understanding of RPVD mechanisms is needed for successful process development due to the high sensitivity of film properties on process conditions. An integrated plasma equipment-target nitridation modeling infrastructure for RPVD has therefore been developed to provide mechanistic insights and assist optimal process design. The target nitridation model computes target nitride coverage based on self-consistently derived plasma characteristics from the plasma equipment model; target sputter yields needed in the plasma equipment model are also self-consistently derived taking into account the yield-suppressing effect from nitridation. The integrated modeling infrastructure has been applied to investigating RPVD processing with a Ti 0.8 Al 0.2 compound target and an Ar/N 2 gas supply. It has been found that the process produces athermal metal neutrals as the primary deposition precursor. The metal stoichiometry in the deposited film is close to the target composition due to the predominance of athermal species in the flux that reaches the substrate. Correlations between process parameters (N 2 flow, target power), plasma characteristics, surface conditions, and deposition kinetics have been studied with the model. The deposition process is characterized by two regimes when the N 2 flow rate is varied. When N 2 is dilute relative to argon, target nitride coverage increases rapidly with increasing N 2 flow. The sputter yield and deposition rate consequently decrease. For less dilute N 2 mixtures, the sputter yield and deposition rate are stable due to the saturation of target nitridation. With increasing target power, the electron density increases nearly linearly while the variation of N generation is much smaller. Target nitridation and its suppression of the sputter yield saturate at high N 2 flow rendering these parameters

Ti film deposition process of a plasma focus: Study by an experimental design

Directory of Open Access Journals (Sweden)

M. J. Inestrosa-Izurieta

2017-10-01

Full Text Available The plasma generated by plasma focus (PF devices have substantially different physical characteristics from another plasma, energetic ions and electrons, compared with conventional plasma devices used for plasma nanofabrication, offering new and unique opportunities in the processing and synthesis of Nanomaterials. This article presents the use of a plasma focus of tens of joules, PF-50J, for the deposition of materials sprayed from the anode by the plasma dynamics in the axial direction. This work focuses on the determination of the most significant effects of the technological parameters of the system on the obtained depositions through the use of a statistical experimental design. The results allow us to give a qualitative understanding of the Ti film deposition process in our PF device depending on four different events provoked by the plasma dynamics: i an electric erosion of the outer material of the anode; ii substrate ablation generating an interlayer; iii electron beam deposition of material from the center of the anode; iv heat load provoking clustering or even melting of the deposition surface.

Control of ordered mesoporous titanium dioxide nanostructures formed using plasma enhanced glancing angle deposition

Energy Technology Data Exchange (ETDEWEB)

Gibson, Des [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Child, David, E-mail: david.child@uws.ac.uk [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Song, Shigeng; Zhao, Chao [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Alajiani, Yahya [Institute of Thin Films, Sensors & Imaging, Scottish Universities Physics Alliance, University of West of Scotland, Paisley, PA1 2BE (United Kingdom); Department of Physics, Faculty of Science, Jazan University, Jazan (Saudi Arabia); Waddell, Ewan [Thin Film Solutions Ltd, West of Scotland Science Park, Glasgow, G20 0TH (United Kingdom)

2015-10-01

Three dimensional nanostructures of mesoporous (pore diameter between 2-50 nm) nanocrystalline titania (TiO{sub 2}) were produced using glancing angle deposition combined with plasma ion assisted deposition, providing plasma enhanced glancing angle deposition eliminating the need for post-annealing to achieve film crystallinity. Electron beam evaporation was chosen to deposit nanostructures at various azimuthal angles, achieving designed variation in three dimensional nanostructure. A thermionic broad beam hollow cathode plasma source was used to enhance electron beam deposition, with ability to vary in real time ion fluxes and energies providing a means to modify and control TiO{sub 2} nanostructure real time with controlled density and porosity along and lateral to film growth direction. Plasma ion assisted deposition was carried out at room temperature using a hollow cathode plasma source, ensuring low heat loading to the substrate during deposition. Plasma enhanced glancing angle TiO{sub 2} structures were deposited onto borosilicate microscope slides and used to characterise the effects of glancing angle and plasma ion energy distribution function on the optical and nanostructural properties. Variation in TiO{sub 2} refractive index from 1.40 to 2.45 (@ 550 nm) using PEGLAD is demonstrated. Results and analysis of the influence of plasma enhanced glancing angle deposition on evaporant path and resultant glancing angle deviation from standard GLAD are described. Control of mesoporous morphology is described, providing a means of optimising light trapping features and film porosity, relevant to applications such as fabrication of dye sensitised solar cells. - Highlights: • Plasma assistance during glancing angle deposition enables control of morphology. • Ion energy variation during glancing angle deposition varies columnar angle • Column thickness of glancing angle deposition dependant on ion current density • Ion current density variation during

Positron deposition in plasmas by positronium beam ionization and transport of positrons in tokamak plasmas

International Nuclear Information System (INIS)

Murphy, T.J.

1986-11-01

In a recently proposed positron transport experiment, positrons would be deposited in a fusion plasma by forming a positronium (Ps) beam and passing it through the plasma. Positrons would be deposited as the beam is ionized by plasma ions and electrons. Radial transport of the positrons to the limiter could then be measured by detecting the gamma radiation produced by annihilation of positrons with electrons in the limiter. This would allow measurements of the transport of electron-mass particles and might shed some light on the mechanisms of electron transport in fusion plasmas. In this paper, the deposition and transport of positrons in a tokamak are simulated and the annihilation signal determined for several transport models. Calculations of the expected signals are necessary for the optimal design of a positron transport experiment. There are several mechanisms for the loss of positrons besides transport to the limiter. Annihilation with plasma electrons and reformation of positronium in positron-hydrogen collisions are two such processes. These processes can alter the signal and place restrictions ons on the plasma conditions in which positron transport experiments can be effectively performed

Neutral-beam deposition in large, finite-beta noncircular tokamak plasmas

International Nuclear Information System (INIS)

Wieland, R.M.; Houlberg, W.A.

1982-02-01

A parametric pencil beam model is introduced for describing the attenuation of an energetic neutral beam moving through a tokamak plasma. The nonnegligible effects of a finite beam cross section and noncircular shifted plasma cross sections are accounted for in a simple way by using a smoothing algorithm dependent linearly on beam radius and by including information on the plasma flux surface geometry explicitly. The model is benchmarked against more complete and more time-consuming two-dimensional Monte Carlo calculations for the case of a large D-shaped tokamak plasma with minor radius a = 120 cm and elongation b/a = 1.6. Deposition profiles are compared for deuterium beam energies of 120 to 150 keV, central plasma densities of 8 x 10 13 - 2 x 10 14 cm -3 , and beam orientation ranging from perpendicular to tangential to the inside wall

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

International Nuclear Information System (INIS)

Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

2014-01-01

The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO 2 thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr) 3 SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO 2 films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO 2 films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS

Deposition of aluminium nanoparticles using dense plasma focus device

International Nuclear Information System (INIS)

Devi, Naorem Bilasini; Srivastava, M P; Roy, Savita

2010-01-01

Plasma route to nanofabrication has drawn much attention recently. The dense plasma focus (DPF) device is used for depositing aluminium nanoparticles on n-type Si (111) wafer. The plasma chamber is filled with argon gas and evacuated at a pressure of 80 Pa. The substrate is placed at distances 4.0 cm, 5.0 cm and 6.0 cm from the top of the central anode. The aluminium is deposited on Si wafer at room temperature with two focused DPF shots. The deposits on the substrate are examined for their morphological properties using atomic force microscopy (AFM). The AFM images have shown the formation of aluminium nanoparticles. From the AFM images, it is found that the size of aluminium nanoparticles increases with increase in distance between the top of anode and the substrate for same number of DPF shots.

High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

Science.gov (United States)

Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2014-01-01

Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

Deposition of porous cathodes using plasma spray technique for reduced-temperature SOFCs

Energy Technology Data Exchange (ETDEWEB)

Jankovic, J.; Hui, S.; Roller, J.; Kesler, O.; Xie, Y.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

2005-07-01

Current techniques for Solid Oxide Fuel Cell (SOFC) materials deposition are often expensive and time-consuming. Plasma-spraying techniques provide higher deposition rates, short processing times and control over porosity and composition during deposition. Optimum plasma spraying for lanthanum based cathode materials were discussed. Plasma-spraying was used to deposit cathode materials onto ceramic and stainless steel substrates to obtain highly porous structures. Lanthanum cathode materials with composition of La{sub 0.6}Sr{sub 0.4}C{sub 0.2}Fe{sub 0.8}O{sub 3} were employed in the powder form. The powder was prepared from powder precursors with different power formers and binder levels, or from produced single-phase lanthanum powders. The (La{sub 0.8}Sr{sub 0.2}){sub 0.98}MnO{sub 3} cathode material was also processed for comparison purposes. The deposition process was developed to obtain coatings with good bond strength, porosity, film thickness and residual stresses. The phase and microstructure of deposited materials were characterized using X-Ray Diffraction and Scanning Electron Microscopy (SEM). It was concluded that good flow of the powder precursors is achieved by spraying 50-100 um particle size powders and using vibrating feeders. Further processing of the spraying powders was recommended. It was noted that oxide precursors showed greater reactivity among the precursors. The best precursor reactivity and coating morphology was obtained using 40 volume per cent of graphite pore former, incorporated into the precursor mixture during wet ball milling. It was concluded that higher power levels and larger distances between the plasma gun and the substrate result in coatings with the highest porosities and best phase compositions. 5 refs., 1 tab., 6 figs.

Plasma distribution of cathodic ARC deposition system

International Nuclear Information System (INIS)

Anders, S.; Raoux, S.; Krishnan, K.; MacGill, R.A.; Brown, I.G.

1996-01-01

The plasma distribution using a cathodic arc plasma source with and without magnetic macroparticle filter has been determined by depositing on a transparent plastic substrate and measuring the film absorption. It was found that the width of the distribution depends on the arc current, and it also depends on the cathode material which leads to a spatial separation of the elements when an alloy cathode is used. By applying a magnetic multicusp field near the exit of the magnetic filter, it was possible to modify the plasma distribution and obtain a flat plasma profile with a constant and homogeneous elemental distribution

Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

Science.gov (United States)

Ballinger, Jared

Diamond thin films have promising applications in numerous fields due to the extreme properties of diamonds in conjunction with the surface enhancement of thin films. Biomedical applications are numerous including temporary implants and various dental and surgical instruments. The unique combination of properties offered by nanostructured diamond films that make it such an attractive surface coating include extreme hardness, low obtainable surface roughness, excellent thermal conductivity, and chemical inertness. Regrettably, numerous problems exist when attempting to coat stainless steel with diamond generating a readily delaminated film: outward diffusion of iron to the surface, inward diffusion of carbon limiting necessary surface carbon precursor, and the mismatch between the coefficients of thermal expansion yielding substantial residual stress. While some exotic methods have been attempted to overcome these hindrances, the most common approach is the use of an intermediate layer between the stainless steel substrate and the diamond thin film. In this research, both 316 stainless steel disks and 440C stainless steel ball bearings were tested with interlayers including discrete coatings and graded, diffusion-based surface enhancements. Titanium nitride and thermochemical diffusion boride interlayers were both examined for their effectiveness at allowing for the growth of continuous and adherent diamond films. Titanium nitride interlayers were deposited by cathodic arc vacuum deposition on 440C bearings. Lower temperature diamond processing resulted in improved surface coverage after cooling, but ultimately, both continuity and adhesion of the nanostructured diamond films were unacceptable. The ability to grow quality diamond films on TiN interlayers is in agreement with previous work on iron and low alloy steel substrates, and the similarly seen inadequate adhesion strength is partially a consequence of the lacking establishment of an interfacial carbide phase

Plasma processes and film growth of expanding thermal plasma deposited textured zinc oxide

NARCIS (Netherlands)

Groenen, R.; Linden, J.L.; Sanden, van de M.C.M.

2005-01-01

Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the

Corrosion properties of plasma deposited high-alloy steel

Czech Academy of Sciences Publication Activity Database

Voleník, Karel; Pražák, M.; Kalabisová, E.; Kreislová, K.; Neufuss, Karel

2002-01-01

Roč. 47, - (2002), s. 243-254 ISSN 0001-7043 R&D Projects: GA ČR GA106/99/0298 Institutional research plan: CEZ:AV0Z2043910 Keywords : plasma deposits, high-alloy steel, polarization curves, corrosion test Subject RIV: BL - Plasma and Gas Discharge Physics

Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

Directory of Open Access Journals (Sweden)

Laura B. Ruppalt

2014-12-01

Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

Preparation of erosion and deposition investigations on plasma facing components in Wendelstein 7-X

Science.gov (United States)

Dhard, C. P.; Balden, M.; Braeuer, T.; Brezinsek, S.; Coenen, J. W.; Dudek, A.; Ehrke, G.; Hathiramani, D.; Klose, S.; König, R.; Laux, M.; Linsmeier, Ch; Manhard, A.; Masuzaki, S.; Mayer, M.; Motojima, G.; Naujoks, D.; Neu, R.; Neubauer, O.; Rack, M.; Ruset, C.; Schwarz-Selinger, T.; Pedersen, T. Sunn; Tokitani, M.; Unterberg, B.; Yajima, M.; W7-X Team1, The

2017-12-01

In the Wendelstein 7-X stellarator with its twisted magnetic geometry the investigation of plasma wall interaction processes in 3D plasma configurations is an important research subject. For the upcoming operation phase i.e. OP1.2, three different types of material probes have been installed within the plasma vessel for the erosion/deposition investigations in selected areas with largely different expected heat load levels, namely, ≤10 MW m-2 at the test divertor units (TDU), ≤500 kW m-2 at the baffles, heat shields and toroidal closures and ≤100 kW m-2 at the stainless steel wall panels. These include 18 exchangeable target elements at TDU, about 30 000 screw heads at graphite tiles and 44 wafer probes on wall panels, coated with marker layers. The layer thicknesses, surface morphologies and the impurity contents were pre-characterized by different techniques and subjected to various qualification tests. The positions of these probes were fixed based on the strike line locations on the divertor predicted by field line diffusion and EMC3/EIRENE modeling calculations for the OP1.2 plasma configurations and availability of locations on panels in direct view of the plasma. After the first half of the operation phase i.e. OP1.2a the probes will be removed to determine the erosion/deposition pattern by post-mortem analysis and replaced by a new set for the second half of the operation phase, OP1.2b.

Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

Energy Technology Data Exchange (ETDEWEB)

Liang, Peipei; Yang, Xu; Li, Hui; Cai, Hua [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Sun, Jian; Xu, Ning [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Wu, Jiada, E-mail: jdwu@fudan.edu.cn [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433 (China)

2015-10-15

A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.

Modernization of serial facility 'BULAT-6' for synthesis of vacuum-arc coatings by the method of plasma-based ion implantation and deposition as well as ion hydrogen-free nitriding

International Nuclear Information System (INIS)

Shulaev, V.M.; Andreev, A.A.; Rudenko, V.P.

2008-01-01

The model of laboratory vacuum-arc facility for realization of the method of plasma-based ion implantation and deposition is worked out by means modernization of serial industrial facility 'BULAT-6'. The facility is suitable for surface modification of instrumental steel items, including the low-alloyed steels with low temperatures of tempering. The low-temperature deposition of coatings on the preliminary nitrided surface of instrument permits obtaining dense coating with minimum maintenance of macroparticles, as well as with coatings superhigh adhesion to the substrate and with superhardness. The coatings possess high property stableness in time.

Low pressure plasma spray deposition of W-Ni-Fe alloy

International Nuclear Information System (INIS)

Mutasim, Z.Z.; Smith, R.W.

1991-01-01

The production of net shape refractory metal structural preforms are increasing in importance in chemical processing, defense and aerospace applications. Conventional methods become limited for refractory metal processing due to the high melting temperatures and fabrication difficulties. Plasma spray forming, a high temperature process, has been shown to be capable of refractory metal powder consolidation in net shape products. The research reported here has evaluated this method for the deposition of heavy tungsten alloys. Plasma Melted Rapidly Solidified (PMRS) W 8%Ni-2%Fe refractory metal powders were spray formed using vacuum plasma spray (VPS) process and produced 99% dense, fine grain and homogeneous microstructures. In this paper plasma operating parameters (plasma arc gas type and flowrate plasma gun nozzle size and spray distance) were studied and their effects on deposit's density and microstructure are reported

Antireflection coatings on plastics deposited by plasma ...

Indian Academy of Sciences (India)

In the ophthalmic industry, plastic lenses are rapidly displacing glass lenses ... Moreover, the plasma polymerization process allows deposition of optical films at room temperature, essential for plastics. ... Bulletin of Materials Science | News.

Solution precursor plasma deposition of nanostructured ZnO coatings

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2011-01-01

Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

Solution precursor plasma deposition of nanostructured ZnO coatings

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

2011-08-15

Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

International Nuclear Information System (INIS)

Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

2015-01-01

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

Science.gov (United States)

Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

2017-12-01

Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

Ion deposition by inductively coupled plasma mass spectrometry

International Nuclear Information System (INIS)

Hu, K.; Houk, R.S.

1996-01-01

An atmospheric pressure inductively coupled plasma (ICP) is used with a quadrupole mass spectrometer (MS) for ion deposition. The deposited element is introduced as a nebulized aqueous solution. Modifications to the ICP-MS device allow generation and deposition of a mass-resolved beam of 165 Ho + at 5x10 12 ions s -1 . The ICP is a universal, multielement ion source that can potentially be used for applications such as deposition of mixtures of widely varying stoichiometry or of alternating layers of different elements. copyright 1996 American Vacuum Society

Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

International Nuclear Information System (INIS)

Sirghi, Lucel; Popa, Gheorghe; Hatanaka, Yoshinori

2006-01-01

The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO 2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment

Plasma-Assisted Deposition of Au/SiO2 Multi-layers as Surface Plasmon Resonance-Based Red-Colored Coatings

NARCIS (Netherlands)

Beyene, H. T.; Tichelaar, F. D.; Verheijen, M. A.; M. C. M. van de Sanden,; Creatore, M.

2011-01-01

In this work, the expanding thermal plasma chemical vapor deposition in combination with radio frequency magnetron sputtering is used to deposit dielectric/metal multi-layers with controlled size and density of nanoparticles. The multi-layer structure serves the purpose of increasing the

Plasma assisted deposition of Au/SiO2 multi-layers as surface plasmon resonance-based red colored coatings

NARCIS (Netherlands)

Takele Beyene, H.T.; Tichelaar, F.D.; Verheijen, M.A.; Sanden, van de M.C.M.; Creatore, M.

2011-01-01

In this work, the expanding thermal plasma chemical vapor deposition in combination with radio frequency magnetron sputtering is used to deposit dielectric/metal multi-layers with controlled size and density of nanoparticles. The multi-layer structure serves the purpose of increasing the

Magnetic field effects on runaway electron energy deposition in plasma facing materials and components

International Nuclear Information System (INIS)

Niemer, K.A.; Gilligan, J.G.

1992-01-01

This paper reports magnetic field effects on runaway electron energy deposition in plasma facing materials and components is investigated using the Integrated TIGER Series. The Integrated TIGER Series is a set of time-independent coupled electron/photon Monte Carlo transport codes which perform photon and electron transport, with or without macroscopic electric and magnetic fields. A three-dimensional computational model of 100 MeV electrons incident on a graphite block was used to simulate runawayelectrons striking a plasma facing component at the edge of a tokamak. Results show that more energy from runaway electrons will be deposited in a material that is in the presence of a magnetic field than in a material that is in the presence of no field. For low angle incident runaway electrons in a strong magnetic field, the majority of the increased energy deposition is near the material surface with a higher energy density. Electrons which would have been reflected with no field, orbit the magnetic field lines and are redeposited in the material surface, resulting in a substantial increase in surface energy deposition. Based on previous studies, the higher energy deposition and energy density will result in higher temperatures which are expected to cause more damage to a plasma facing component

Plasma-deposited a-C(N) H films

CERN Document Server

Franceschini, D E

2000-01-01

The growth behaviour, film structure and mechanical properties of plasma-deposited amorphous hydrogenated carbon-nitrogen films are shortly reviewed. The effect of nitrogen-containing gas addition to the deposition to the hydrocarbon atmospheres used is discussed, considering the modifications observed in the chemical composition growth kinetics, carbon atom hybridisation and chemical bonding arrangements of a-C(N):H films. The overall structure behaviour is correlated to the variation of the mechanical properties.

Plasma deposition of polymer composite films incorporating nanocellulose whiskers

Science.gov (United States)

Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

2011-11-01

In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

Thermal plasma spheroidization and spray deposition of barium titanate powder and characterization of the plasma sprayable powder

Energy Technology Data Exchange (ETDEWEB)

Pakseresht, A.H., E-mail: amirh_pak@yahoo.com [Department of Ceramics, Materials and Energy Research Center, P.O. Box 31787-316, Karaj (Iran, Islamic Republic of); Rahimipour, M.R. [Department of Ceramics, Materials and Energy Research Center, P.O. Box 31787-316, Karaj (Iran, Islamic Republic of); Vaezi, M.R. [Department of Nanotechnology and Advanced Materials, Materials and Energy Research Center, P.O. Box 31787-316, Karaj (Iran, Islamic Republic of); Salehi, M. [Department of Materials Engineering, Isfahan University of Technology, P.O. Box 84156-83111, Isfahan (Iran, Islamic Republic of)

2016-04-15

In this paper, atmospheric plasma spray method was used to produce dense plasma sprayable powder and thick barium titanate film. In this regard, the commercially feedstock powders were granulated and spheroidized by the organic binder and the thermal spray process, respectively. Scanning electron microscopy was used to investigate the microstructure of the produced powders and the final deposits. X-ray diffraction was also implemented to characterize phase of the sprayed powder. The results indicated that spheroidized powder had suitable flowability as well as high density. The micro-hardness of the film produced by the sprayed powders was higher than that of the film deposited by the irregular granules. Additionally, relative permittivity of the films was increased by decreasing the defects from 160 to 293 for film deposited using spheroidized powder. The reduction in the relative permittivity of deposits, in comparison with the bulk material, was due to the existence of common defects in the thermal spray process. - Highlights: • We prepare sprayable BaTiO{sub 3} powder with no or less inside voids for plasma spray application for first time. • The sprayable powder has good flow characteristics and high density. • Powder spheroidization via plasma spray improves the hardness and dielectric properties of the deposited film.

Thermal plasma spheroidization and spray deposition of barium titanate powder and characterization of the plasma sprayable powder

International Nuclear Information System (INIS)

Pakseresht, A.H.; Rahimipour, M.R.; Vaezi, M.R.; Salehi, M.

2016-01-01

In this paper, atmospheric plasma spray method was used to produce dense plasma sprayable powder and thick barium titanate film. In this regard, the commercially feedstock powders were granulated and spheroidized by the organic binder and the thermal spray process, respectively. Scanning electron microscopy was used to investigate the microstructure of the produced powders and the final deposits. X-ray diffraction was also implemented to characterize phase of the sprayed powder. The results indicated that spheroidized powder had suitable flowability as well as high density. The micro-hardness of the film produced by the sprayed powders was higher than that of the film deposited by the irregular granules. Additionally, relative permittivity of the films was increased by decreasing the defects from 160 to 293 for film deposited using spheroidized powder. The reduction in the relative permittivity of deposits, in comparison with the bulk material, was due to the existence of common defects in the thermal spray process. - Highlights: • We prepare sprayable BaTiO_3 powder with no or less inside voids for plasma spray application for first time. • The sprayable powder has good flow characteristics and high density. • Powder spheroidization via plasma spray improves the hardness and dielectric properties of the deposited film.

Modeling high-density-plasma deposition of SiO{sub 2} in SiH{sub 4}/O{sub 2}/Ar

Energy Technology Data Exchange (ETDEWEB)

Meeks, E.; Larson, R.S. [Sandia National Labs., Livermore, CA (United States); Ho, P.; Apblett, C. [Sandia National Labs., Albuquerque, NM (United States); Han, S.M.; Edelberg, E.; Aydil, E. [Univ. of California, Santa Barbara, CA (United States)

1997-03-01

The authors have compiled sets of gas-phase and surface reactions for use in modeling plasma-enhanced chemical vapor deposition of silicon dioxide from silane, oxygen and argon gas mixtures in high-density-plasma reactors. They have applied the reaction mechanisms to modeling three different kinds of high-density plasma deposition chambers, and tested them by comparing model predictions to a variety of experimental measurements. The model simulates a well mixed reactor by solving global conservation equations averaged across the reactor volume. The gas-phase reaction mechanism builds from fundamental electron-impact cross section data available in the literature, and also includes neutral-molecule, ion-ion, and ion-molecule reaction paths. The surface reaction mechanism is based on insight from attenuated total-reflection Fourier-transform infrared spectroscopy experiments. This mechanism describes the adsorption of radical species on an oxide surface, ion-enhanced reactions leading to species desorption from the surface layer, radical abstractions competing for surface sites, and direct energy-dependent ion sputtering of the oxide material. Experimental measurements of total ion densities, relative radical densities as functions of plasma operating conditions, and net deposition-rate have been compared to model predictions to test and modify the chemical kinetics mechanisms. Results show good quantitative agreement between model predictions and experimental measurements.

Measurements of recombination coefficient of hydrogen atoms on plasma deposited thin films

International Nuclear Information System (INIS)

Drenik, A.; Vesel, A.; Mozetic, M.

2006-01-01

We have performed experiments in plasma afterglow in order to determine the recombination coefficients of plasma deposited thin films of tungsten and graphite. Plasma deposited films rather than bulk material were used in order to more closely emulate surface structure of plasma-facing material deposits in fusion reactors. We have also determined the recombination coefficient of 85250 borosilicate glass and Teflon. Plasma was created by means of a radio frequency generator in a mixture of argon and hydrogen at the pressures between 60 Pa and 280 Pa. The degree of dissociation of hydrogen molecules was found to be between 0.1 and 1. The H-atom density was measured by Fiber Optic Catalytic Probe. The recombination coefficient was determined by measuring the axial profile of the H-atom density and using Smith's side arm diffusion model. (author)

Atmospheric pressure cold plasma treatment of cellulose based fillers for wood plastic composites

Science.gov (United States)

Lekobou, William; Englund, Karl; Pedrow, Patrick; Scudiero, Louis

2011-10-01

The main challenge of wood plastic composites (WPC) resides in the low interfacial adhesion due to incompatibility between the cellulose based filler that has a polar surface and most common matrixes, polyolefins which are non-polar. Plasma treatment is a promising technique for surface modification and its implementation into the processing of WPC would provide this industry with a versatile and nearly environmentally benign manufacturing tool. Our investigation aims at designing a cold atmospheric pressure plasma reactor for coating fillers with a hydrophobic material prior to compounding with the matrix. Deposition was achieved with our reactor that includes an array of high voltage needles, a grounded metal mesh, Ar as carrier gas and C2H2 as the precursor molecule. Parameters studied have included gas feed rates and applied voltage; FTIR, ESCA, AFM and SEM imaging were used for film diagnostics. We will also report on deposition rate and its dependence on radial and axial position as well as the effects of plasma-polymerized acetylene on the surface free energy of cellulose based substrates.

Deposition of thin films and surface modification by pulsed high energy density plasma

International Nuclear Information System (INIS)

Yan Pengxun; Yang Size

2002-01-01

The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

Evidence of coexistence of micro and nanoporosity of organo-silica polymeric films deposited on silicon by plasma deposition

International Nuclear Information System (INIS)

Purohit, Viswas; Mielczarski, Ela; Mielczarski, Jerzy A.; Akesso, Laurent

2013-01-01

A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/oxygen ratios. The composition and structure, at microscopic and nanoscopic levels, of the deposited films were determined by external reflection and transmission Fourier Transform Infrared (FTIR) spectroscopy as well as by X-Ray Photoelectron Spectroscopy (XPS). The content of carbon and oxygen in films were found to be inversely proportional to each other. XPS results showed that the outermost surface of the deposited films are nanoporous and coexist with microporosity which was revealed by electron microscopy. The structure of deposited coatings is anisotropic as was documented by polarized external reflection FTIR spectroscopy. Several correlations between the film chemical composition, surface structure, and macroscopic properties of the films such as: hydrophobicity and hydrophilicity were established. - Highlights: • Hybrid organo-polymer silicon films deposited by RF plasma on silicon substrates. • FTIR and XPS reveal porosity by interpreting bonding between Si and –O. • Quantification of nano and microporosity are identified with bonding of Si with –O

Evidence of coexistence of micro and nanoporosity of organo-silica polymeric films deposited on silicon by plasma deposition

Energy Technology Data Exchange (ETDEWEB)

Purohit, Viswas, E-mail: vishwas.purohit@gmail.com [Laboratoire Environnment et Mineralurgie, UMR 7569 CNRS, INPL-ENSG, BP.40, 54501 Vandoeuvre-les-Nancy (France); Mielczarski, Ela; Mielczarski, Jerzy A. [Laboratoire Environnment et Mineralurgie, UMR 7569 CNRS, INPL-ENSG, BP.40, 54501 Vandoeuvre-les-Nancy (France); Akesso, Laurent [Teer Coatings Ltd., Droitwich, Worcestershire WR9 9AS (United Kingdom)

2013-09-16

A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/oxygen ratios. The composition and structure, at microscopic and nanoscopic levels, of the deposited films were determined by external reflection and transmission Fourier Transform Infrared (FTIR) spectroscopy as well as by X-Ray Photoelectron Spectroscopy (XPS). The content of carbon and oxygen in films were found to be inversely proportional to each other. XPS results showed that the outermost surface of the deposited films are nanoporous and coexist with microporosity which was revealed by electron microscopy. The structure of deposited coatings is anisotropic as was documented by polarized external reflection FTIR spectroscopy. Several correlations between the film chemical composition, surface structure, and macroscopic properties of the films such as: hydrophobicity and hydrophilicity were established. - Highlights: • Hybrid organo-polymer silicon films deposited by RF plasma on silicon substrates. • FTIR and XPS reveal porosity by interpreting bonding between Si and –O. • Quantification of nano and microporosity are identified with bonding of Si with –O.

Influence of emitter temperature on the energy deposition in a low-pressure plasma

International Nuclear Information System (INIS)

Levko, Dmitry; Raja, Laxminarayan L.

2016-01-01

The influence of emitter temperature on the energy deposition into low-pressure plasma is studied by the self-consistent one-dimensional Particle-in-Cell Monte Carlo Collisions model. Depending on the emitter temperature, different modes of discharge operation are obtained. The mode type depends on the plasma frequency and does not depend on the ratio between the densities of beam and plasma electrons. Namely, plasma is stable when the plasma frequency is small. For this plasma, the energy transfer from emitted electrons to plasma electrons is inefficient. The increase in the plasma frequency results first in the excitation of two-stream electron instability. However, since the thermal velocity of plasma electrons is smaller than the electrostatic wave velocity, the resonant wave-particle interaction is inefficient for the energy deposition into the plasma. Further increase in the plasma frequency leads to the distortion of beam of emitted electrons. Then, the electrostatic wave generated due to two-stream instability decays into multiple slower waves. Phase velocities of these waves are comparable with the thermal velocity of plasma electrons which makes possible the resonant wave-particle interaction. This results in the efficient energy deposition from emitted electrons into the plasma.

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

CERN Document Server

Martins, D R; Verdonck, P; Brown, I G

2002-01-01

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

International Nuclear Information System (INIS)

Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

2002-01-01

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the stopping and range of ions in matter code. We find film contamination of the order of 10 -4 -10 -3 , and the memory of the prior history of the deposition hardware can be relatively long lasting

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

Energy Technology Data Exchange (ETDEWEB)

Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

2002-08-13

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

Influence of substrate geometry on ion-plasma coating deposition process

International Nuclear Information System (INIS)

Khoroshikh, V.M.; Leonov, S.A.; Belous, V.A.

2008-01-01

Influence of substrate geometry on the feature of Ti vacuum arc plasma streams condensation process in presence of N 2 or Ar in a discharge ambient were investigated. Character of gas pressure and substrate potential influence on deposition rate is conditioned the competitive processes of condensation and sputtering, and also presence of double electric layer on a border plasma-substrate. Influence of potential on deposition rate especially strongly shows up for cylindrical substrates of small size. For such substrates it was found substantial (approximately in 4 times) growth of deposition rate at the increasing of negative potential from 100 to 700 V when nitrogen pressure is ∼0,3...2,5 Pa. Possibility of droplet-free coating deposition the substrate backs and in discharge ambient, being outside area of cathode direct visibility is shown

Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

Science.gov (United States)

Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

2013-11-01

To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films.

Carbon-based micro-ball and micro-crystal deposition using filamentary pulsed atmospheric pressure plasma

International Nuclear Information System (INIS)

Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

2014-01-01

Thin plasma filaments are produced by the propagation of ionization waves from a spiked driven electrode in a quartz tube in an argon/methane gas mixture (2400 sccm/2 sccm) at atmospheric pressure. The position of the touch point of filaments on the substrate surface is controlled in our experiment by applying various suitable substrate configurations and geometries of the grounded electrode. The gas conditions at the touch point are varied from argon to ambient air. Based on microphotography and discharge current waveforms, the duration of the filament touching the substrate is estimated to be about one microsecond. Carbon-based materials are deposited during this time at the touch points on the substrate surface. Micro-balls are produced if the filament touch points are saved from ambient air by the argon flow. Under an air admixture, micro-crystals are formed. The dimension of both materials is approximately one micrometre (0.5–2 µm) and corresponds to about 10 10 –10 12 carbon atoms. Neither the diffusion of neutral species nor drift of ions can be reason for the formation of such a big micro-material during this short period of filament–substrate interaction. It is possible that charged carbon-based materials are formed in the plasma channel and transported to the surface of the substrate. The mechanism of this transport and characterization of micro-materials, which are formed under different gas conditions in our experiment, will be studied in the future. (paper)

Optimized plasma-deposited fluorocarbon coating for dry release and passivation of thin SU-8 cantilevers

DEFF Research Database (Denmark)

Keller, Stephan Urs; Häfliger, Daniel; Boisen, Anja

2008-01-01

during fluorocarbon deposition, the surface free energy of the coating can be tuned to allow for uniform wetting during spin coating of arbitrary thin SU-8 films. Further, they define an optimal pressure regime for the release of thin polymer structures at high yield. They demonstrate the successful......Plasma-deposited fluorocarbon coatings are introduced as a convenient method for the dry release of polymer structures. In this method, the passivation process in a deep reactive ion etch reactor was used to deposit hydrophobic fluorocarbon films. Standard photolithography with the negative epoxy......-based photoresist SU-8 was used to fabricate polymer structures such as cantilevers and membranes on top of the nonadhesive release layer. The authors identify the plasma density as the main parameter determining the surface properties of the deposited fluorocarbon films. They show that by modifying the pressure...

Inductively coupled plasma nanoetching of atomic layer deposition alumina

DEFF Research Database (Denmark)

Han, Anpan; Chang, Bingdong; Todeschini, Matteo

2018-01-01

such as silicon dioxide, silicon nitride, and diamond. In this report, we systematically study nanoscale plasma etching of Al2O3 with electron beam lithography and deep UV resist masks. The gas composition and pressure were tuned for optimal etching, and redeposition conditions were mapped. With a BCl3 and Ar...... the resist profile angle. For Al2O3 patterned with deep UV lithography, the smallest structures were 220 nm. For electron beam lithography patterns, the smallest gratings were 18-nm-wide with 50-nm-pitch. Using alumina as a hard mask, we show aspect ratio of 7-10 for subsequent silicon plasma etching, and we......Al2O3 thin-film deposited by atomic layer deposition is an attractive plasma etch mask for Micro and Nano Electro-Mechanical Systems (MEMS and NEMS). 20-nm-thick Al2O3 mask enables through silicon wafer plasma etching. Al2O3 is also an excellent etch mask for other important MEMS materials...

Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

Science.gov (United States)

Harder, Bryan J.; Zhu, Dongming

2011-01-01

In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

Plasma Cell Neoplasms (Including Multiple Myeloma)—Health Professional Version

Science.gov (United States)

There are several types of plasma cell neoplasms, including monoclonal gammopathy of undetermined significance (MGUS), isolated plasmacytoma of the bone, extramedullary plasmacytoma, and multiple myeloma. Find evidence-based information on plasma cell neoplasms treatment, research, and statistics.

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

International Nuclear Information System (INIS)

Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

2006-01-01

Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

Plasma deposition of antimicrobial coating on organic polymer

Science.gov (United States)

Rżanek-Boroch, Zenobia; Dziadczyk, Paulina; Czajkowska, Danuta; Krawczyk, Krzysztof; Fabianowski, Wojciech

2013-02-01

Organic materials used for packing food products prevent the access of microorganisms or gases, like oxygen or water vapor. To prolong the stability of products, preservatives such as sulfur dioxide, sulfites, benzoates, nitrites and many other chemical compounds are used. To eliminate or limit the amount of preservatives added to food, so-called active packaging is sought for, which would limit the development of microorganisms. Such packaging can be achieved, among others, by plasma modification of a material to deposit on its surface substances inhibiting the growth of bacteria. In this work plasma modification was carried out in barrier discharge under atmospheric pressure. Sulfur dioxide or/and sodium oxide were used as the coating precursors. As a result of bacteriological studies it was found that sulfur containing coatings show a 16% inhibition of Salmonella bacteria growth and 8% inhibition of Staphylococcus aureus bacteria growth. Sodium containing coatings show worse (by 10%) inhibiting properties. Moreover, films with plasma deposited coatings show good sealing properties against water vapor. Contribution to the Topical Issue "13th International Symposium on High Pressure Low Temperature Plasma Chemistry (Hakone XIII)", Edited by Nicolas Gherardi, Henryca Danuta Stryczewska and Yvan Ségui.

Deposition of Composite LSCF-SDC and SSC-SDC Cathodes by Axial-Injection Plasma Spraying

Science.gov (United States)

Harris, Jeffrey; Qureshi, Musab; Kesler, Olivera

2012-06-01

The performance of solid oxide fuel cell cathodes can be improved by increasing the number of electrochemical reaction sites, by controlling microstructures, or by using composite materials that consist of an ionic conductor and a mixed ionic and electronic conductor. LSCF (La0.6Sr0.4Co0.2Fe0.8O3-δ) and SSC (Sm0.5Sr0.5CoO3) cathodes were manufactured by axial-injection atmospheric plasma spraying, and composite cathodes were fabricated by mixing SDC (Ce0.8Sm0.2O1.9) into the feedstock powders. The plasma power was varied by changing the proportion of nitrogen in the plasma gas. The microstructures of cathodes produced with different plasma powers were characterized by scanning electron microscopy and gas permeation measurements. The deposition efficiencies of these cathodes were calculated based on the mass of the sprayed cathode. Particle surface temperatures were measured in-flight to enhance understanding of the relationship between spray parameters, microstructure, and deposition efficiency.

Evaporation of Droplets in Plasma Spray-Physical Vapor Deposition Based on Energy Compensation Between Self-Cooling and Plasma Heat Transfer

Science.gov (United States)

Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

2017-10-01

In the plasma spray-physical vapor deposition process (PS-PVD), there is no obvious heating to the feedstock powders due to the free molecular flow condition of the open plasma jet. However, this is in contrast to recent experiments in which the molten droplets are transformed into vapor atoms in the open plasma jet. In this work, to better understand the heating process of feedstock powders in the open plasma jet of PS-PVD, an evaporation model of molten ZrO2 is established by examining the heat and mass transfer process of molten ZrO2. The results reveal that the heat flux in PS-PVD open plasma jet (about 106 W/m2) is smaller than that in the plasma torch nozzle (about 108 W/m2). However, the flying distance of molten ZrO2 in the open plasma jet is much longer than that in the plasma torch nozzle, so the heating in the open plasma jet cannot be ignored. The results of the evaporation model show that the molten ZrO2 can be partly evaporated by self-cooling, whereas the molten ZrO2 with a diameter <0.28 μm and an initial temperature of 3247 K can be completely evaporated within the axial distance of 450 mm by heat transfer.

Partially ionized plasmas including the third symposium on uranium plasmas

Energy Technology Data Exchange (ETDEWEB)

Krishnan, M. [ed.

1976-09-01

Separate abstracts are included for 28 papers on electrically generated plasmas, fission generated plasmas, nuclear pumped lasers, gaseous fuel reactor research, and applications. Five papers have been previously abstracted and included in ERA.

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

Energy Technology Data Exchange (ETDEWEB)

Zolotukhin, D. B.; Tyunkov, A. V.; Yushkov, Yu. G., E-mail: yuyushkov@gmail.com [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Oks, E. M. [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

2016-06-15

We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

Plasma-enhanced chemical vapor deposition of graphene on copper substrates

Directory of Open Access Journals (Sweden)

Nicolas Woehrl

2014-04-01

Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

Science.gov (United States)

Gericke, D O; Schlanges, M

2003-03-01

The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly.

Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2007-02-28

Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

Plasma deposition of Au-SiO2 multilayers for surface plasmon resonance based red colored coatings

NARCIS (Netherlands)

Takele Beyene, H.T.; Tichelaar, F.D.; Sanden, van de M.C.M.; Creatore, M.; Kondruweit, S.; Szyszka, B.; Pütz, J.

2010-01-01

Nanocomposite thin films with metallic nanoparticles embedded in a dielectric material show attractive plasmonic properties due to dielectric and quantum confinement effects. In this work. the expanding thermal plasma chemical vapor deposition in combination with radjo frequency magnetron sputtering

Correlation between structure and optical properties of Si-based alloys deposited by PECVD

Energy Technology Data Exchange (ETDEWEB)

Giangregorio, M.M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)]. E-mail: michelaria@hotmail.com; Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Sacchetti, A. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)

2006-07-26

Si-based thin films, including {mu}c-Si, Si{sub 1-x}Ge {sub x} and Si{sub 1-x}C {sub x} alloys, have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiF{sub 4}:H{sub 2}:He, SiF{sub 4}:GeH{sub 4}:H{sub 2} and SiF{sub 4}:CH{sub 4}:H{sub 2} plasmas, respectively. When SiF{sub 4} is used as Si-precursor, it is found that a low flux of CH{sub 4} or GeH{sub 4} results in incorporation of C and Ge in alloys as high as 30%. Correlations between microstructure and optical properties of films are investigated using spectroscopic ellipsometry. The role of fluorine atoms in the growth chemistry and material microstructure is discussed.

Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

NARCIS (Netherlands)

Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

2012-01-01

An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

CERN Document Server

Kim, H

2002-01-01

We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

Gravimetrical and chemical characterization of SiOx structures deposited on fine powders by short plasma exposure in a plasma down stream reactor

International Nuclear Information System (INIS)

Spillmann, Adrian; Sonnenfeld, Axel; Rohr, Philipp Rudolf von

2008-01-01

The surface of lactose particles was modified by a plasma-enhanced chemical vapor deposition process to improve the flow behavior of the powder. For this, the particulates were treated in a plasma down stream reactor which provides a short (50 ms) and homogeneous exposure to the capacitively coupled RF discharge. The organosilicon monomer hexamethyldisiloxane (HMDSO) was used as a precursor for the formation of SiO x which is deposited on the substrate particle surface. For varying process gas mixtures (O 2 /Ar/HMDSO) and RF power applied, the amount of the deposited material was determined gravimetrically after dissolution of the lactose substrate particles and the chemical composition of the accumulated deposition material was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. The concentration of the deposited SiO x relating to the substrate material was found to be in the range of 0.1 wt.%. Based on the ATR-FTIR analysis, the inorganic, i.e. oxidic SiO x fraction of the obtained deposits was shown to be controllable by varying the process parameters, whilst a relatively large amount of organic structures must be considered.

Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

NARCIS (Netherlands)

Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

2008-01-01

Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

Deposition of LDH on plasma treated polylactic acid to reduce water permeability

KAUST Repository

Bugatti, Valeria

2013-04-01

A simple and scalable deposition process was developed to prepare polylactic acid (PLA) coatings with enhanced water barrier properties for food packaging applications. This method based on electrostatic interactions between the positively charged layers of layered double hydroxides (LDHs) modified with ionic liquids (ILs) and the negatively charged plasma treated polylactic acid leads to homogeneous, stable, and highly durable coatings. Deposition of the LDH coatings increases the surface hydrophobicity of the neat PLA, which results to a decrease in water permeability by about 35%. © 2013 Elsevier Inc.

Hydrogen retention in carbon-tungsten co-deposition layer formed by hydrogen RF plasma

International Nuclear Information System (INIS)

Katayama, K.; Kawasaki, T.; Manabe, Y.; Nagase, H.; Takeishi, T.; Nishikawa, M.

2006-01-01

Carbon-tungsten co-deposition layers (C-W layers) were formed by sputtering method using hydrogen or deuterium RF plasma. The deposition rate of the C-W layer by deuterium plasma was faster than that by hydrogen plasma, where the increase of deposition rate of tungsten was larger than that of carbon. This indicates that the isotope effect on sputtering-depositing process for tungsten is larger than that for carbon. The release curve of hydrogen from the C-W layer showed two peaks at 400 deg. C and 700 deg. C. Comparing the hydrogen release from the carbon deposition layer and the tungsten deposition layer, it is considered that the increase of the release rate at 400 deg. C is affected by tungsten and that at 700 deg. C is affected by carbon. The obtained hydrogen retention in the C-W layers which have over 60 at.% of carbon was in the range between 0.45 and 0.16 as H/(C + W)

Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

Science.gov (United States)

Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

2017-03-01

Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

International Nuclear Information System (INIS)

Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

2013-01-01

In the present study, we investigated the gas and moisture permeation barrier properties of Al 2 O 3 films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH 3 ) 3 ] as the Al source and O 2 plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al 2 O 3 at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10 −4 gm −2 day −1 and 1.2 × 10 −3 gm −2 day −1 , respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O 2 plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties

Tungsten oxide coatings deposited by plasma spray using powder and solution precursor for detection of nitrogen dioxide gas

Energy Technology Data Exchange (ETDEWEB)

Zhang, Chao, E-mail: zhangc@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Wang, Jie [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Geng, Xin [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China)

2016-05-25

Increasing attention has been paid on preparation methods for resistive-type gas sensors based on semiconductor metal oxides. In this work, tungsten oxide (WO{sub 3}) coatings were prepared on alumina substrates and used as gas sensitive layers. The coatings were deposited by atmospheric plasma spray using powder, solution precursor, or a combination of both. Tungsten oxide powder through a powder port and ammonium tungstate aqueous solution through a liquid port were injected into plasma stream respectively or together to deposit WO{sub 3} coatings. Phase structures in the coatings were characterized by X-ray diffraction analyzer. The field-emission scanning electron microscopy images confirmed that the coatings were in microstructure, nanostructure or micro-nanostructure. The sensing properties of the sensors based on the coatings exposed to 1 ppm nitrogen dioxide gas were characterized in a home-made instrument. Sensing properties of the coatings were compared and discussed. The influences of gas humidity and working temperature on the sensor responses were further studied. - Highlights: • Porous gas sensitive coatings were deposited by plasma spray using powder and solution precursor. • Crystallized WO{sub 3} were obtained through hybrid plasma spray plus a pre-conditioned step. • Plasma power had an important influence on coating microstructure. • The particle size of atmospheric plasma-sprayed microstructured coating was stable. • Solution precursor plasma-sprayed WO{sub 3} coatings had nanostructure and showed good responses to 1 ppm NO{sub 2}.

A new thin film deposition process by cathodic plasma electrolysis

International Nuclear Information System (INIS)

Paulmier, T.; Kiriakos, E.; Bell, J.; Fredericks, P.

2004-01-01

Full text: A new technique, called atmospheric pressure plasma deposition (APPD), has been developed since a few years for the deposition of carbon and DLC, Titanium or Silicon films on metal and metal alloys substrates. A high voltage (2kV) is applied in a liquid electrolytic solution between an anode and a cathode, both electrodes being cylindrical: a glow discharge is then produced and confined at the vicinity of the cathode. The physic of the plasma in the electrolytic solution near the cathode is very different form the other techniques of plasma deposition since the pressure is here close to the atmospheric pressure. We describe here the different physico-chemical processes occurring during the process. In this cathodic process, the anodic area is significantly larger than the cathode area. In a first step, the electrolytic solution is heated by Joule effect induced by the high voltage between the electrodes. Due to the high current density, the vaporization of the solution occurs near the cathode: a large amount of bubbles are produced which are stabilized at the electrode by hydrodynamic and electromagnetic forces, forming a vapour sheath. The electric field and voltage drop are then concentrated in this gas envelope, inducing the ionization of the gas and the ignition of a glow discharge at the surface of the material. This plasma induces the formation of ionized and reactive species which diffuse and are accelerated toward the cathode. These excited species are the precursors for the formation of the deposition material. At the same time, the glow discharge interacts with the electrolyte solution inducing also ionization, convection and polymerization processes in the liquid: the solution is therefore a second source of the deposition material. A wide range of films have been deposited with a thickness up to 10 micrometers. These films have been analyzed by SEM and Raman spectroscopy. The electrolytic solution has been characterized by GC-MS and the

Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation

Science.gov (United States)

Zeng, Z. M.; Tian, X. B.; Chu, P. K.

2003-01-01

Plasma immersion ion implantation and deposition (PIII-D) offers a non-line-of-sight fabrication method for various types of thin films on steels to improve the surface properties. In this work, titanium films were first deposited on 9Cr18 (AISI440) stainless bearing steel by metal plasma immersion ion implantation and deposition (MePIII-D) using a titanium vacuum arc plasma source. Afterwards, carbon implantation and carbon film deposition were performed by acetylene (C2H2) plasma immersion ion implantation. Multiple-layered structures with superior properties were produced by conducting Ti MePIII-D + C2H2 PIII successively. The composition and structure of the films were investigated employing Auger electron spectroscopy and Raman spectroscopy. It is shown that the mixing for Ti and C atoms is much better when the target bias is higher during Ti MePIII-D. A top diamond-like carbon layer and a titanium oxycarbide layer are formed on the 9Cr18 steel surface. The wear test results indicate that this dual PIII-D method can significantly enhance the wear properties and decrease the surface friction coefficient of 9Cr18 steel.

Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation

International Nuclear Information System (INIS)

Zeng, Z.M.; Tian, X.B.; Chu, P.K.

2003-01-01

Plasma immersion ion implantation and deposition (PIII-D) offers a non-line-of-sight fabrication method for various types of thin films on steels to improve the surface properties. In this work, titanium films were first deposited on 9Cr18 (AISI440) stainless bearing steel by metal plasma immersion ion implantation and deposition (MePIII-D) using a titanium vacuum arc plasma source. Afterwards, carbon implantation and carbon film deposition were performed by acetylene (C 2 H 2 ) plasma immersion ion implantation. Multiple-layered structures with superior properties were produced by conducting Ti MePIII-D + C 2 H 2 PIII successively. The composition and structure of the films were investigated employing Auger electron spectroscopy and Raman spectroscopy. It is shown that the mixing for Ti and C atoms is much better when the target bias is higher during Ti MePIII-D. A top diamond-like carbon layer and a titanium oxycarbide layer are formed on the 9Cr18 steel surface. The wear test results indicate that this dual PIII-D method can significantly enhance the wear properties and decrease the surface friction coefficient of 9Cr18 steel

Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

Science.gov (United States)

Rau, Kaustubh R.

Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

Deposition of fluorocarbon films by Pulsed Plasma Thruster on the anode side

International Nuclear Information System (INIS)

Zhang, Rui; Zhang, Daixian; Zhang, Fan; He, Zhen; Wu, Jianjun

2013-01-01

Fluorocarbon thin films were deposited by Pulsed Plasma Thruster at different angles on the anode side of the thruster. Density and velocity of the plasma in the plume of the Pulsed Plasma Thruster were determined using double and triple Langmuir probe apparatus respectively. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), scanning probe microscope (SPM) and UV–vis spectrometer. Low F/C ratio (0.64–0.86) fluorocarbon films are deposited. The F/C ratio decreases with angle increasing from 0 degree to 30 degree; however it turns to increase with angle increasing from 45 degree to 90 degree. The films deposited at center angles appear rougher compared with that prepared at angles beyond 45 degree. These films basically show having strong absorption properties for wavelength below 600 nm and having enhanced reflective characteristics. Due to the influence of the chemical composition and the surface morphology of the films, the optical properties of these films also show significant angular dependence.

Application of plasma deposition technology for nuclear fuel fabrication

International Nuclear Information System (INIS)

Jung, I. H.; Moon, J. S.; Park, H. S.; Song, K. C.; Lee, C. Y.; Kang, K. H.; Ryu, H. J.; Kim, H. S.; Yang, M. S.

2001-01-01

Yttria-stabilized-zirconia (m.p. 2670.deg. C), was deposited by induction plasma spraying system with a view to develop a new nuclear fuel fabrication technology. To fabricate the dense pellets, the spraying condition was optimized through the process parameters such as, chamber pressure, plasma plate power, powder spraying distance, sheath gas composition, probe position particle size and its morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed 97.11% theoretical density, when the sheath gas flow rate was Ar/H 2 120/20 L/min, probe position 8cm, particle size-75 μm and spraying distance 22cm. The microstructure of YSZ deposit by ICP was lamellae and columnar perpendicular to the spraying direction. In the bottom part near the substrate, small equiaxed grains bounded in a layer. In the middle part, relatively regular size of columnar grains with excellent bonding each other were distinctive

Model of enhanced energy deposition in a Z-pinch plasma

International Nuclear Information System (INIS)

Velikovich, A. L.; Davis, J.; Thornhill, J. W.; Giuliani, J. L. Jr.; Rudakov, L. I.; Deeney, C.

2000-01-01

In numerous experiments, magnetic energy coupled to strongly radiating Z-pinch plasmas exceeds the thermalized kinetic energy, sometimes by a factor of 2-3. An analytical model describing this additional energy deposition based on the concept of macroscopic magnetohydrodynamic (MHD) turbulent pinch heating proposed by Rudakov and Sudan [Phys. Reports 283, 253 (1997)] is presented. The pinch plasma is modeled as a foam-like medium saturated with toroidal ''magnetic bubbles'' produced by the development of surface m=0 Rayleigh-Taylor and MHD instabilities. As the bubbles converge to the pinch axis, their magnetic energy is converted to thermal energy of the plasma through pdV work. Explicit formulas for the average dissipation rate of this process and the corresponding contribution to the resistance of the load, which compare favorably to the experimental data and simulation results, are presented. The possibility of using this enhanced (relative to Ohmic heating) dissipation mechanism to power novel plasma radiation sources and produce high K-shell yields using long current rise time machines is discussed. (c) 2000 American Institute of Physics

Observation of non-uniform erosion and deposition phenomena on graphite after plasma exposure

International Nuclear Information System (INIS)

Hildebrandt, D.; Grote, H.; Schneider, W.; Wienhold, P.; Seggern, J. von

1999-01-01

The modifications of fine grain isotropic graphite surfaces after plasma exposure have been investigated using surface analysis techniques with high spatial resolution in area and depth. The samples are graphite target tiles of ASDEX-upgrade and coated graphite collector samples exposed for special erosion/deposition experiments in the divertor plasma of ASDEX-upgrade or in the scrape-off plasma of TEXTOR-94. In addition, a graphite sample was exposed to a low temperature, clean deuterium plasma to study the modifications of the surface morphology during plasma exposure. The results give clear indications of non-uniform erosion and deposition processes. The change of the surface morphology during these processes is discussed. (orig.)

Plasma processing techniques for deposition of carbonic thin protective coatings on structural nuclear materials

International Nuclear Information System (INIS)

Andrei, V.; Oncioiu, G.; Coaca, E.; Rusu, O.; Lungu, C.

2009-01-01

Full text of publication follows: The production of nano-structured surface films with controlled properties is crucial for the development of materials necessary for the Advanced Systems for Nuclear Energy. Since the surface of materials is the zone through which materials interact with the environment, the surface science and surface engineering techniques plays an essential role in the understanding and control of the processes involved. Complex surface structures were developed on stainless steels used as structural nuclear materials: austenitic stainless steels based on Fe, austenitic steels with high content of Cr, ferrites resistant to corrosion, by various Plasma Processing methods which include: - Plasma Electrolytic (PE) treatments: the steel substrates were modified by nitriding and nitro-carburizing plasma diffusion treatments; - carbonic films deposition in Thermionic Vacuum Arc Plasma. The results of the characterization of surface structures obtained in various experimental conditions for improvement of the properties (corrosion resistance, hardness, wear properties) are reported: the processes and structures were characterized by correlation of the results of the complementary techniques: XPS, 'depth profiling', SEM, XRD, EIS. An overall description of the processes involved in the surface properties improvement, and some consideration about the new materials development for energy technologies are presented

Deposition of hybrid organic-inorganic composite coatings using an atmospheric plasma jet system.

Science.gov (United States)

Dembele, Amidou; Rahman, Mahfujur; Reid, Ian; Twomey, Barry; MacElroy, J M Don; Dowling, Denis P

2011-10-01

The objective of this study is to investigate the influence of alcohol addition on the incorporation of metal oxide nanoparticles into nm thick siloxane coatings. Titanium oxide (TiO2) nanoparticles with diameters of 30-80 nm were incorporated into an atmospheric plasma deposited tetramethylorthosilicate (TMOS) siloxane coating. The TMOS/TiO2 coating was deposited using the atmospheric plasma jet system known as PlasmaStream. In this system the liquid precursor/nanoparticle mixture is nebulised into the plasma. It was observed that prior to being nebulised the TiO2 particles agglomerated and settled over time in the TMOS/TiO2 mixture. In order to obtain a more stable nanoparticle/TMOS suspension the addition of the alcohols methanol, octanol and pentanol to this mixture was investigated. The addition of each of these alcohols was found to stabilise the nanoparticle suspension. The effect of the alcohol was therefore assessed with respect to the properties of the deposited coatings. It was observed that coatings deposited from TMOS/TiO2, with and without the addition of methanol were broadly similar. In contrast the coatings deposited with octanol and pentanol addition to the TMOS/TiO2 mixture were significantly thicker, for a given set of deposition parameters and were also more homogeneous. This would indicate that the alcohol precursor was incorporated into the plasma polymerised siloxane. The incorporation of the organic functionality from the alcohols was confirmed from FTIR spectra of the coatings. The difference in behaviour with alcohol type is likely to be due to the lower boiling point of methanol (65 degrees C), which is lower than the maximum plasma temperature measured at the jet orifice (77 degrees C). This temperature is significantly lower than the 196 degrees C and 136 degrees C boiling points of octanol and pentanol respectively. The friction of the coatings was determined using the Pin-on-disc technique. The more organic coatings deposited with

Fast waves mode conversion and energy deposition in simulated, pre-heated, neoclassical, tight aspect ratio tokamak plasmas

Energy Technology Data Exchange (ETDEWEB)

Bruma, C.; Komoshvili, K. [Tel Aviv Univ. (Israel). School of Physics and Astronomy; Coll. of Judea and Samaria, Ariel (Israel); Cuperman, S. [Tel Aviv Univ. (Israel). School of Physics and Astronomy

2000-11-01

Some basic aspects of wave-plasma interaction of special interest for tight aspect ratio (spherical) tokamaks (ST's) are investigated numerically; these aspects include fast mode conversion and energy deposition. The study is based on the numerical solution of the full electro-magnetic (e.m.) wave equation which includes a quite general two-fluid, resistive MHD dielectric tensor, with consideration of equilibrium current and neoclassical effects. A generalized expression for the power absorption appropriate for the above scenario, with consideration of all the basic effects also present in the dielectric tensor-operator, was derived and used. The current-carrying ST-plasma has a circular cross-section and toroidicity effects are simulated by a Grad-Shafranov type, radially dependent axial magnetic field and its shear; however, the Shafranov shift is not considered. Actually, the equilibrium parameters and radial profiles (magnetic field, pressure and current) observed in the low field side (LFS) of spherical tokamaks (viz., START at Culham, UK) are used. Fast magnetosonic waves are launched from an external antenna into this simulated spherical tokamak plasma; these waves are converted to Alfven waves at points (layers) satisfying the Alfven resonance condition. Quantitative-results concerning (i) the structure and space dependence of the mode-converted Alfven waves and (ii) the basic features of the deposited power are presented. Their dependence on the equilibrium plasma current, neoclassical resistivity and electron inertia as well as on those of the antenna launched wave (wave numbers, frequency and current intensity) is systematically studied and discussed. (orig.)

Fast waves mode conversion and energy deposition in simulated, pre-heated, neoclassical, tight aspect ratio tokamak plasmas

International Nuclear Information System (INIS)

Bruma, C.; Komoshvili, K.; Cuperman, S.

2000-01-01

Some basic aspects of wave-plasma interaction of special interest for tight aspect ratio (spherical) tokamaks (ST's) are investigated numerically; these aspects include fast mode conversion and energy deposition. The study is based on the numerical solution of the full electro-magnetic (e.m.) wave equation which includes a quite general two-fluid, resistive MHD dielectric tensor, with consideration of equilibrium current and neoclassical effects. A generalized expression for the power absorption appropriate for the above scenario, with consideration of all the basic effects also present in the dielectric tensor-operator, was derived and used. The current-carrying ST-plasma has a circular cross-section and toroidicity effects are simulated by a Grad-Shafranov type, radially dependent axial magnetic field and its shear; however, the Shafranov shift is not considered. Actually, the equilibrium parameters and radial profiles (magnetic field, pressure and current) observed in the low field side (LFS) of spherical tokamaks (viz., START at Culham, UK) are used. Fast magnetosonic waves are launched from an external antenna into this simulated spherical tokamak plasma; these waves are converted to Alfven waves at points (layers) satisfying the Alfven resonance condition. Quantitative-results concerning (i) the structure and space dependence of the mode-converted Alfven waves and (ii) the basic features of the deposited power are presented. Their dependence on the equilibrium plasma current, neoclassical resistivity and electron inertia as well as on those of the antenna launched wave (wave numbers, frequency and current intensity) is systematically studied and discussed. (orig.)

Diamondlike carbon deposition on plastic films by plasma source ion implantation

CERN Document Server

Tanaka, T; Shinohara, M; Takagi, T

2002-01-01

Application of pulsed high negative voltage (approx 10 mu s pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N sub 2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N sub 2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron mic...

A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

International Nuclear Information System (INIS)

Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

2010-01-01

This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

Properties of a-C:H:O plasma polymer films deposited from acetone vapors

Energy Technology Data Exchange (ETDEWEB)

Drabik, M., E-mail: martin.drabik@gmail.com [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Celma, C. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Kousal, J.; Biederman, H. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Macromolecular Physics, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Hegemann, D. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland)

2014-12-31

To gain insight into the deposition and stability of oxygen-containing plasma polymer films, the properties of amorphous oxygenated hydrocarbon (a-C:H:O) plasma polymer coatings deposited from acetone vapors under various experimental conditions are investigated. Apart from the discharge power, the influence of the reactive carbon dioxide (CO{sub 2}) gas on the structure of the resulting films is studied. It is found by characterization using X-ray Photoelectron Spectroscopy and Fourier-Transform Infrared Spectroscopy that the experimental conditions particularly influence the amount of oxygen in the deposited a-C:H:O plasma polymer films. The O/C elemental ratio increases with increasing amount of CO{sub 2} in the working gas mixture (up to 0.2 for 24 sccm of CO{sub 2} at 30 W) and decreases with increasing RF discharge power (down to 0.17 for 50 W). Furthermore, the nature of bonds between the oxygen and carbon atoms has been examined. Only low amounts of double and triple bonded carbon are observed. This has a particular influence on the aging of the plasma polymer films which is studied both in ambient air and in distilled water for up to 4 months. Overall, stable a-C:H:O plasma polymer films are deposited comprising low amounts (up to about 5%) of ester/carboxyl groups. - Highlights: • Hydrocarbon plasma polymer films with variable oxygen content can be prepared. • Stable oxygenated hydrocarbon plasma polymers contain max 5% of ester/carboxyl groups. • Acetone-derived plasma polymer films can be used as permanent hydrophilic surfaces.

Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

Energy Technology Data Exchange (ETDEWEB)

Talkenberg, Florian, E-mail: florian.talkenberg@ipht-jena.de; Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, D-07745 Jena (Germany); Radnóczi, György Zoltán; Pécz, Béla [Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege Miklós u. 29-33, H-1121 Budapest (Hungary); Dikhanbayev, Kadyrjan; Mussabek, Gauhar [Department of Physics and Engineering, al-Farabi Kazakh National University, 71 al-Farabi Ave., 050040 Almaty (Kazakhstan); Gudovskikh, Alexander [Nanotechnology Research and Education Centre, St. Petersburg Academic University, Russian Academy of Sciences, Hlopina Str. 8/3, 194021 St. Petersburg (Russian Federation)

2015-07-15

Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

Effect of electron degeneracy on fast-particles energy deposition in dense plasma systems

International Nuclear Information System (INIS)

Johzaki, T.; Nakao, Y.; Nakashima, H.; Kudo, K.

1997-01-01

The effects of electron degeneracy on fast-particles energy deposition in dense plasmas are investigated by making transport calculations for the fast particles. It is found that the degeneracy substantially affects the profiles of energy deposition of 3.52-MeV α-particles. On the other hand, the effect on the energy deposition of 14.1-MeV neutrons is negligibly small because the recoil ions, which transfer the neutron energy to the plasma constituents, are produced in a whole plasma volume due to the long mean-free-path of neutrons. The coupled transport-hydrodynamic calculations show that these effects of degeneracy are negligible in the ignition and burn characteristics of central ignition D-T targets. (author)

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

International Nuclear Information System (INIS)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-01-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm 3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

Science.gov (United States)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-06-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

Science.gov (United States)

Kim, Ki Seok; Kim, Ki Hyun; Ji, You Jin; Park, Jin Woo; Shin, Jae Hee; Ellingboe, Albert Rogers; Yeom, Geun Young

2017-10-19

Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4 at a low temperature of 80 °C. The thin deposited SiN x film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x film exhibited a low WVTR of 4.39 × 10 -4  g (m 2 · day) -1 for a single thin (430 nm thick) film SiN x and the electrical characteristics of OLED devices before and after the thin SiN x film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x on the OLED device.

New system for vacuum deposition of refractory materials using an atmospheric-pressure inductively coupled plasma

International Nuclear Information System (INIS)

Merkle, B.D.; Kniseley, R.N.; Schmidt, F.A.

1987-01-01

We have successfully developed a technique utilizing an atmospheric-pressure inductively coupled plasma combined with a low-pressure deposition chamber for deposition of thin films. The equipment and method of operation are discussed. Refractory powders (Nb and Y 2 O 3 ) were injected into the plasma and deposited as Nb and substoichiometric yttrium oxide, YO/sub 1.49/, onto Fe and Cu substrates. The substoichiometric yttrium oxide deposit adhered well to the Fe and Cu substrates, while the Nb deposit adhered well to the Fe only. The Nb deposit on the Cu substrate flaked and peeled probably because of stresses induced from the thermal expansion mismatch between the Nb and Cu. Further studies will be undertaken to better understand the processes occurring in this type of plasma-coating system in order to optimize the instrumental parameters for particular coating applications

Factors affecting the adhesion of microwave plasma deposited siloxane films on polycarbonate

International Nuclear Information System (INIS)

Muir, B.W.; Thissen, H.; Simon, G.P.; Murphy, P.J.; Griesser, H.J.

2006-01-01

The effects of a radiofrequency oxygen plasma pretreatment and residual water content in the substrate on the adhesion of microwave plasma deposited tetramethyldisiloxane thin films on Bisphenol-A polycarbonate (BPA-PC) were investigated. Samples were characterised using a crosshatch adhesion test, optical and electron microscopy, and X-ray photoelectron spectroscopy. It was found that the use of a low power (5 W) and low treatment time (0.1 s) oxygen plasma can improve adhesion while greater treatment times (1-30 s) and higher oxygen plasma powers (40 W) resulted in a decreased level of adhesion. In addition, it was shown that a BPA-PC water content greater than 90 ppm resulted in rapid adhesion failure of deposited films at the substrate-plasma polymer interface during outdoor weathering. All films degraded substantially when exposed to environmental weathering, indicating ageing reactions within the plasma polymer films themselves, and at the bulk polymer-coating interface

Fundamental processes of plasma and reactive gas surface treatment for the recovery of hydrogen isotopes from carbon co-deposits in fusion devices

International Nuclear Information System (INIS)

Moeller, Soeren

2014-01-01

The use of carbon-based plasma-facing wall components offers many advantages for plasma operation in magnetic confinement nuclear fusion devices. However, through reactions with the hydrogen based fusion plasma, carbon forms amorphous hydrogenated carbon co-deposits (a-C:H) in the vacuum vessels. If tritium is used to fuel the reactor, this co-deposition can quickly lead to an inacceptable high tritium inventory. Through co-deposition with carbon about 10% of the tritium injected into the reactor can be trapped. Even with other wall materials co-deposition can be significant. A method to recover the hydrogen isotopes from the co-deposits is necessary. The method has to be compatible with the requirements of the devices and nuclear fusion plasma operation. In this work thermo-chemical removal by neutral gases (TCR) and removal by plasmas is investigated. Models are developed to describe the involved processes of both removal methods. TCR is described using a reaction-diffusion model. Within this model the reactive gas diffuses into the co-deposits and subsequently reacts in a thermally activated process. The co-deposits are pyrolysed, forming volatile gases, e.g. CO 2 and H 2 O. These gases are pumped from the vacuum vessel and recycled. Applying the model to literature observations enables to connect data on exposure temperature, pressure, time and co-deposit properties. Two limits of TCR (reaction- or diffusion-limited) are identified. Plasma removal sputters co-deposits by their chemical and physical interaction with the impinging ions. The description uses a 0D plasma model from the literature which derives plasma parameters from the balance of input power to plasma power losses. The model is extended with descriptions of the plasma sheath and ion-surface interactions to derive the co-deposit removal rates. Plasma removal can be limited by this ion induced surface release rate or the rate of pumping of the released species. To test the models dedicated

Fundamental processes of plasma and reactive gas surface treatment for the recovery of hydrogen isotopes from carbon co-deposits in fusion devices

Energy Technology Data Exchange (ETDEWEB)

Moeller, Soeren

2014-11-01

The use of carbon-based plasma-facing wall components offers many advantages for plasma operation in magnetic confinement nuclear fusion devices. However, through reactions with the hydrogen based fusion plasma, carbon forms amorphous hydrogenated carbon co-deposits (a-C:H) in the vacuum vessels. If tritium is used to fuel the reactor, this co-deposition can quickly lead to an inacceptable high tritium inventory. Through co-deposition with carbon about 10% of the tritium injected into the reactor can be trapped. Even with other wall materials co-deposition can be significant. A method to recover the hydrogen isotopes from the co-deposits is necessary. The method has to be compatible with the requirements of the devices and nuclear fusion plasma operation. In this work thermo-chemical removal by neutral gases (TCR) and removal by plasmas is investigated. Models are developed to describe the involved processes of both removal methods. TCR is described using a reaction-diffusion model. Within this model the reactive gas diffuses into the co-deposits and subsequently reacts in a thermally activated process. The co-deposits are pyrolysed, forming volatile gases, e.g. CO{sub 2} and H{sub 2}O. These gases are pumped from the vacuum vessel and recycled. Applying the model to literature observations enables to connect data on exposure temperature, pressure, time and co-deposit properties. Two limits of TCR (reaction- or diffusion-limited) are identified. Plasma removal sputters co-deposits by their chemical and physical interaction with the impinging ions. The description uses a 0D plasma model from the literature which derives plasma parameters from the balance of input power to plasma power losses. The model is extended with descriptions of the plasma sheath and ion-surface interactions to derive the co-deposit removal rates. Plasma removal can be limited by this ion induced surface release rate or the rate of pumping of the released species. To test the models dedicated

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Energy Technology Data Exchange (ETDEWEB)

Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

2016-01-15

It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

Plasma exposure behavior of re-deposited tungsten on structural materials of fusion reactors

Energy Technology Data Exchange (ETDEWEB)

Xu, Yu-Ping; Wang, Jing [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Zhou, Hai-Shan, E-mail: haishanzhou@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Liu, Feng [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li, Zeng-De [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Li, Xiao-Chun; Lu, Tao [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Liu, Hao-Dong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Ding, Fang; Mao, Hong-Min; Zhao, Ming-Zhong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Lin, Chen-Guang [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Luo, Guang-Nan [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Hefei Center for Physical Science and Technology, Hefei 230031 (China); Hefei Science Center of Chinese Academy of Science, Hefei 230027 (China)

2017-05-15

To evaluate the effects of re-deposited tungsten (W) on the surface modification and hydrogen isotope retention behavior of fusion structural materials, the plasma exposure behavior of re-deposited W samples prepared by magnetron sputtering on the F82H steel, the V-5Cr-5Ti alloy as well as bare substrate samples was investigated. All the samples were exposed to 367 shots of deuterium plasmas in the 2015 spring EAST campaign. After the plasma exposure, large area of W layer was exfoliated, while big blisters were found at the interface between the remaining W layer and the substrate materials. The deuterium retention behavior of the samples with re-deposited W layer was characterized by thermal desorption spectroscopy and compared with the bare substrate samples.

Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

Energy Technology Data Exchange (ETDEWEB)

Sowa, Mark J., E-mail: msowa@ultratech.com [Ultratech/Cambridge NanoTech, 130 Turner Street, Building 2, Waltham, Massachusetts 02453 (United States)

2014-01-15

Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

Science.gov (United States)

Dechana, A; Thamboon, P; Boonyawan, D

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

Energy Technology Data Exchange (ETDEWEB)

Dechana, A. [Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand); Thamboon, P. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2014-10-15

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

Science.gov (United States)

Dechana, A.; Thamboon, P.; Boonyawan, D.

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

International Nuclear Information System (INIS)

Dechana, A.; Thamboon, P.; Boonyawan, D.

2014-01-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al 2 O 3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al 2 O 3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed

Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

Directory of Open Access Journals (Sweden)

Yoffe Alexander

2015-09-01

Full Text Available A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2 mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+N2 and C4F8 - 1:1 and between N2 and Ar - 1:2 in the N2/Ar/C4F8 mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films.

Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

Energy Technology Data Exchange (ETDEWEB)

Jun, Byung Hyuk; Kim, Chan Joong

2006-05-15

Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

Tissue gadolinium deposition in renally impaired rats exposed to different gadolinium-based MRI contrast agents: evaluation with inductively coupled plasma mass spectrometry (ICP-MS).

Science.gov (United States)

Sato, Tomohiro; Ito, Katsuyoshi; Tamada, Tsutomu; Kanki, Akihiko; Watanabe, Shigeru; Nishimura, Hirotake; Tanimoto, Daigo; Higashi, Hiroki; Yamamoto, Akira

2013-10-01

To quantify tissue gadolinium (Gd) deposition in renally impaired rats exposed to Gd-EOB-DTPA and other Gd-based MRI contrast agents by means of inductively coupled plasma mass spectrometry (ICP-MS), and to compare the differences in distribution among major organs as possible triggers for nephrogenic systemic fibrosis (NSF). A total of 15 renally impaired rats were injected with Gd-EOB-DTPA, Gd-DTPA-BMA and Gd-HP-DO3A. Gd contents of skin, liver, kidney, lung, heart, spleen, diaphragm and femoral muscle were measured by inductively coupled plasma mass spectrometry (ICP-MS). Histological assessment was also conducted. Tissue Gd deposition in all organs was significantly higher (P=0.005~0.009) in the Gd-DTPA-BMA group than in the Gd-HP-DO3A and Gd-EOB-DTPA groups. In the Gd-DTPA-BMA group, Gd was predominantly deposited in kidney (1306±605.7μg/g), followed by skin, liver, lung, spleen, femoral muscle, diaphragm and heart. Comparing Gd-HP-DO3A and Gd-EOB-DTPA groups, Gd depositions in the kidney, liver and lung were significantly lower (P=0.009~0.011) in the Gd-EOB-DTPA group than in the Gd-HP-DO3A group although no significant differences were seen for any other organs. Gd-EOB-DTPA is a stable and safe Gd-based contrast agent (GBCA) showing lower Gd deposition in major organs in renally impaired rats, compared with other GBCAs. This fact suggests that the risk of NSF onset would be low in the use of Gd-EOB-DTPA. Copyright © 2013 Elsevier Inc. All rights reserved.

Surface hardening of optic materials by deposition of diamond like carbon coatings from separated plasma of arc discharge

Science.gov (United States)

Osipkov, A. S.; Bashkov, V. M.; Belyaeva, A. O.; Stepanov, R.; Mironov, Y. M.; Galinovsky, A. L.

2015-02-01

This article considers the issue of strengthening of optic materials used in the IR spectrum by deposition of diamond like carbon coatings from separated plasma arc discharge. The report shows results of tests of bare and strengthened optical materials such as BaF2, MgF2, Si, Ge, including the testing of their strength and spectral characteristics. Results for the determination of optical constants for the DLC coatings deposited on substrates of Ge and Si, by using separated plasma, are also presented. Investigations showed that surface hardening of optical materials operable in the IR range, by the deposition of diamond like carbon coating onto their surface, according to this technology, considerably improves operational properties and preserves or improves their optic properties.

Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition

Science.gov (United States)

De Silva, Anuja; Seshadri, Indira; Chung, Kisup; Arceo, Abraham; Meli, Luciana; Mendoza, Brock; Sulehria, Yasir; Yao, Yiping; Sunder, Madhana; Truong, Hoa; Matham, Shravan; Bao, Ruqiang; Wu, Heng; Felix, Nelson M.; Kanakasabapathy, Sivananda

2017-04-01

With the increasing prevalence of complex device integration schemes, trilayer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination and are limited in their ability to scale down thickness without compromising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of plasma-enhanced atomic layer deposited (PEALD) TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a trilayer scheme patterned with PEALD-based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited versus a spin-on metal hardmask.

Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

International Nuclear Information System (INIS)

Gonzalez, G.; Krishnan, B.; Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K.; Shaji, S.

2011-01-01

Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2011-08-31

Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

Science.gov (United States)

Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

2018-02-01

We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

Science.gov (United States)

Matzke, Carolyn M.; Ashby, Carol I. H.; Bridges, Monica M.; Manginell, Ronald P.

2000-01-01

A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

International Nuclear Information System (INIS)

Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

2002-01-01

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

Energy Technology Data Exchange (ETDEWEB)

Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

2002-09-02

Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

Directory of Open Access Journals (Sweden)

Matthew T. Cole

2013-05-01

Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

Sputter deposition of tantalum-nitride films on copper using an rf-plasma

International Nuclear Information System (INIS)

Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

1994-01-01

A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

Plasma-deposited hybrid silica membranes with a controlled retention of organic bridges

Energy Technology Data Exchange (ETDEWEB)

Ngamou, P.H.T.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands); Overbeek, J.P.; Kreiter, R.; Van Veen, H.M.; Vente, J.F. [ECN, Energy research Centre of the Netherlands, Petten (Netherlands); Wienk, I.M.; Cuperus, P.F. [SolSep BV, Apeldoorn (Netherlands)

2013-03-05

Hybrid organically bridged silica membranes are suitable for energy-efficient molecular separations under harsh industrial conditions. Such membranes can be useful in organic solvent nanofiltration if they can be deposited on flexible, porous and large area supports. Here, we report the proof of concept for applying an expanding thermal plasma to the synthesis of perm-selective hybrid silica films from an organically bridged monomer, 1,2-bis(triethoxysilyl)ethane. This membrane is the first in its class to be produced by plasma enhanced chemical vapor deposition. By tuning the plasma and process parameters, the organic bridging groups could be retained in the separating layer. This way, a defect free film could be made with pervaporation performances of an n-butanol-water mixture comparable with those of conventional ceramic supported membranes made by sol-gel technology (i.e. a water flux of [similar]1.8 kg m'-{sup 2} h{sup -1}, a water concentration in the permeate higher than 98% and a separation factor of >1100). The obtained results show the suitability of expanding thermal plasma as a technology for the deposition of hybrid silica membranes for molecular separations.

The Electrical Properties of Plasma-Deposited Thin Films Derived from Pelargonium graveolens

Directory of Open Access Journals (Sweden)

Ahmed Al-Jumaili

2017-10-01

Full Text Available Inherently volatile at atmospheric pressure and room temperature, plant-derived precursors present an interesting human-health-friendly precursor for the chemical vapour deposition of thin films. The electrical properties of films derived from Pelargonium graveolens (geranium were investigated in metal–insulator–metal (MIM structures. Thin polymer-like films were deposited using plasma-enhanced synthesis under various plasma input power. The J–V characteristics of thus-fabricated MIM were then studied in order to determine the direct current (DC conduction mechanism of the plasma polymer layers. It was found that the capacitance of the plasma-deposited films decreases at low frequencies (C ≈ 10−11 and remains at a relatively constant value (C ≈ 10−10 at high frequencies. These films also have a low dielectric constant across a wide range of frequencies that decreases as the input RF power increases. The conductivity was determined to be around 10−16–10−17 Ω−1 m−1, which is typical for insulating materials. The Richardson–Schottky mechanism might dominate charge transport in the higher field region for geranium thin films.

Solution precursor plasma deposition of nanostructured CdS thin films

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2012-01-01

Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

Solution precursor plasma deposition of nanostructured CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

Hidden parameters in the plasma deposition of microcrystalline silicon solar cells

NARCIS (Netherlands)

van den Donker, M.N.; Rech, B.; Schmitz, R.; Klomfass, J.; Dingemans, G.; Finger, F.; Houben, L.; Kessels, W.M.M.; Sanden, van de M.C.M.

2007-01-01

The effect of process parameters on the plasma deposition of µc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the

Plasma deposition of silver nanoparticles on ultrafiltration membranes: antibacterial and anti-biofouling properties.

Science.gov (United States)

Cruz, Mercedes Cecilia; Ruano, Gustavo; Wolf, Marcus; Hecker, Dominic; Vidaurre, Elza Castro; Schmittgens, Ralph; Rajal, Verónica Beatriz

2015-02-01

A novel and versatile plasma reactor was used to modify Polyethersulphone commercial membranes. The equipment was applied to: i) functionalize the membranes with low-temperature plasmas, ii) deposit a film of poly(methyl methacrylate) (PMMA) by Plasma Enhanced Chemical Vapor Deposition (PECVD) and, iii) deposit silver nanoparticles (SNP) by Gas Flow Sputtering. Each modification process was performed in the same reactor consecutively, without exposure of the membranes to atmospheric air. Scanning electron microscopy and transmission electron microscopy were used to characterize the particles and modified membranes. SNP are evenly distributed on the membrane surface. Particle fixation and transport inside membranes were assessed before- and after-washing assays by X-ray photoelectron spectroscopy depth profiling analysis. PMMA addition improved SNP fixation. Plasma-treated membranes showed higher hydrophilicity. Anti-biofouling activity was successfully achieved against Gram-positive ( Enterococcus faecalis ) and -negative ( Salmonella Typhimurium) bacteria. Therefore, disinfection by ultrafiltration showed substantial resistance to biofouling. The post-synthesis functionalization process developed provides a more efficient fabrication route for anti-biofouling and anti-bacterial membranes used in the water treatment field. To the best of our knowledge, this is the first report of a gas phase condensation process combined with a PECVD procedure in order to deposit SNP on commercial membranes to inhibit biofouling formation.

CMAS Interactions with Advanced Environmental Barrier Coatings Deposited via Plasma Spray- Physical Vapor Deposition

Science.gov (United States)

Harder, B. J.; Wiesner, V. L.; Zhu, D.; Johnson, N. S.

2017-01-01

Materials for advanced turbine engines are expected to have temperature capabilities in the range of 1370-1500C. At these temperatures the ingestion of sand and dust particulate can result in the formation of corrosive glass deposits referred to as CMAS. The presence of this glass can both thermomechanically and thermochemically significantly degrade protective coatings on metallic and ceramic components. Plasma Spray- Physical Vapor Deposition (PS-PVD) was used to deposit advanced environmental barrier coating (EBC) systems for investigation on their interaction with CMAS compositions. Coatings were exposed to CMAS and furnace tested in air from 1 to 50 hours at temperatures ranging from 1200-1500C. Coating composition and crystal structure were tracked with X-ray diffraction and microstructure with electron microscopy.

Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

Czech Academy of Sciences Publication Activity Database

Schäfer, J.; Fricke, K.; Mika, Filip; Pokorná, Zuzana; Zajíčková, L.; Foest, R.

2017-01-01

Roč. 630, MAY 30 (2017), s. 71-78 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : plasma jet * liquid assisted plasma enhanced chemical * vapour deposition * silicon oxide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Coating and films Impact factor: 1.879, year: 2016

Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

International Nuclear Information System (INIS)

Kakiuchi, H.; Nakahama, Y.; Ohmi, H.; Yasutake, K.; Yoshii, K.; Mori, Y.

2005-01-01

Silicon nitride (SiN x ) films have been prepared at extremely high deposition rates by the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si(001) wafers from gas mixtures containing He, H 2 , SiH 4 and N 2 or NH 3 . A 150 MHz very high frequency (VHF) power supply was used to generate high-density radicals in the atmospheric pressure plasma. Deposition rate, composition and morphology of the SiN x films prepared with various deposition parameters were studied by scanning electron microscopy and Auger electron spectroscopy. Fourier transformation infrared (FTIR) absorption spectroscopy was also used to characterize the structure and the chemical bonding configurations of the films. Furthermore, etching rate with buffered hydrofluoric acid (BHF) solution, refractive index and capacitance-voltage (C-V) characteristics were measured to evaluate the dielectric properties of the films. It was found that effective passivation of dangling bonds and elimination of excessive hydrogen atoms at the film-growing surface seemed to be the most important factor to form SiN x film with a dense Si-N network. The C-V curve of the optimized film showed good interface properties, although further improvement was necessary for use in the industrial metal-insulator-semiconductor (MIS) applications

Plasma deposited composite coatings to control biological response of osteoblast-like MG-63 cells

Science.gov (United States)

Keremidarska, M.; Radeva, E.; Eleršič, K.; Iglič, A.; Pramatarova, L.; Krasteva, N.

2014-12-01

The successful osseointegration of a bone implant is greatly dependent on its ability to support cellular adhesion and functions. Deposition of thin composite coatings onto the implant surface is a promising approach to improve interactions with cells without compromising implant bulk properties. In this work, we have developed composite coatings, based on hexamethyldisiloxane (HMDS) and detonation nanodiamond (DND) particles and have studied adhesion, growth and function of osteoblast-like MG-63 cells. PPHMDS/DND composites are of interest for orthopedics because they combine superior mechanical properties and good biocompatibility of DND with high adherence of HMDS to different substrata including glass, metals and plastics. We have used two approaches of the implementation of DND particles into a polymer matrix: pre-mixture of both components followed by plasma polymerization and layer-by-layer deposition of HMDS and DND particles and found that the deposition approach affects significantly the surface properties of the resulting layers and cell behaviour. The composite, prepared by subsequent deposition of monomer and DND particles was hydrophilic, with a rougher surface and MG-63 cells demonstrated better spreading, growth and function compared to the other composite which was hydrophobic with a smooth surface similarly to unmodified polymer. Thus, by varying the deposition approach, different PPHMDS/DND composite coatings, enhancing or inhibiting osteoblast adhesion and functions, can be obtained. In addition, the effect of fibronectin pre-adsorption was studied and was found to increase greatly MG-63 cell spreading.

Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O{sub 2} plasma-treated polyethylene terephthalate substrate

Energy Technology Data Exchange (ETDEWEB)

Lim, Donggun [Department of Electronic Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do 380-702 (Korea, Republic of); Lee, Jaehyeong [School of Electronic and Electrical Engineering, Sungkyunkwan University 300, Cheoncheon-dong, Jangan-gu, Sunwon, Kyeonggi-do, 440-746 (Korea, Republic of); Song, Woochang, E-mail: wcsong@kangwon.ac.kr [Department of Electrical Engineering, Kangwon National University, Samcheok-si, Gangwon-do 245-711 (Korea, Republic of)

2013-11-01

We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O{sub 2} plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O{sub 2} plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O{sub 2} plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O{sub 2} plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells.

A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

Science.gov (United States)

Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

2014-06-11

Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

International Nuclear Information System (INIS)

Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

2008-01-01

Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

Hydrogen gas driven permeation through tungsten deposition layer formed by hydrogen plasma sputtering

International Nuclear Information System (INIS)

Uehara, Keiichiro; Katayama, Kazunari; Date, Hiroyuki; Fukada, Satoshi

2015-01-01

Highlights: • H permeation tests for W layer formed by H plasma sputtering are performed. • H permeation flux through W layer is larger than that through W bulk. • H diffusivity in W layer is smaller than that in W bulk. • The equilibrium H concentration in W layer is larger than that in W bulk. - Abstract: It is important to evaluate the influence of deposition layers formed on plasma facing wall on tritium permeation and tritium retention in the vessel of a fusion reactor from a viewpoint of safety. In this work, tungsten deposition layers having different thickness and porosity were formed on circular nickel plates by hydrogen RF plasma sputtering. Hydrogen permeation experiment was carried out at the temperature range from 250 °C to 500 °C and at hydrogen pressure range from 1013 Pa to 101,300 Pa. The hydrogen permeation flux through the nickel plate with tungsten deposition layer was significantly smaller than that through a bare nickel plate. This indicates that a rate-controlling step in hydrogen permeation was not permeation through the nickel plate but permeation though the deposition layer. The pressure dependence on the permeation flux differed by temperature. Hydrogen permeation flux through tungsten deposition layer is larger than that through tungsten bulk. From analysis of the permeation curves, it was indicated that hydrogen diffusivity in tungsten deposition layer is smaller than that in tungsten bulk and the equilibrium hydrogen concentration in tungsten deposition layer is enormously larger than that in tungsten bulk at same hydrogen pressure.

Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Katsuyuki Okada

2007-01-01

Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

Science.gov (United States)

Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

2017-12-01

Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

International Nuclear Information System (INIS)

Poon, R.W.Y.; Liu, X.Y.; Chung, C.Y.; Chu, P.K.; Yeung, K.W.K.; Lu, W.W.; Cheung, K.M.C.

2005-01-01

Nickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants on account of their super-elastic and shape memory properties. However, the materials are prone to surface corrosion and the most common problem is out-diffusion of harmful Ni ions from the substrate into body tissues and fluids. In order to improve the corrosion resistance and related surface properties, we used the technique of plasma immersion ion implantation and deposition to deposit an amorphous hydrogenated carbon coating onto NiTi and implant carbon into NiTi. Both the deposited amorphous carbon film and carbon plasma implanted samples exhibit much improved corrosion resistances and surface mechanical properties and possible mechanisms are suggested

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

Science.gov (United States)

Lucovsky, Gerald; Zeller, Daniel

2011-09-01

Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Energy Technology Data Exchange (ETDEWEB)

Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

2011-08-15

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

International Nuclear Information System (INIS)

Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

2011-01-01

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

Study on electrostatic and electromagnetic probes operated in ceramic and metallic depositing plasmas

International Nuclear Information System (INIS)

Styrnoll, T; Bienholz, S; Awakowicz, P; Lapke, M

2014-01-01

This paper discusses plasma probe diagnostics, namely the multipole resonance probe (MRP) and Langmuir probe (LP), operated in depositing plasmas. The aim of this work is to show that the combination of both probes provides stable and robust measurements and clear determination of plasma parameters for metallic and ceramic coating processes. The probes use different approaches to determine plasma parameters, e.g. electron density n e and electron temperature T e . The LP is a well-established plasma diagnostic, and its applicability in technological plasmas is well documented. The LP is a dc probe that performs a voltage sweep and analyses the measured current, which makes it insensitive against conductive metallic coating. However, once the LP is dielectrically coated with a ceramic film, its functionality is constricted. In contrast, the MRP was recently presented as a monitoring tool, which is insensitive to coating with dielectric ceramics. It is a new plasma diagnostic based on the concept of active plasma resonance spectroscopy, which uses the universal characteristic of all plasmas to resonate on or near the electron plasma frequency. The MRP emits a frequency sweep and the absorption of the signal, the |S 11 | parameter, is analysed. Since the MRP concept is based on electromagnetic waves, which are able to transmit dielectrics, it is insensitive to dielectric coatings. But once the MRP is metallized with a thin conductive film, no undisturbed RF-signal can be emitted into the plasma, which leads to falsified plasma parameter. In order to compare both systems, during metallic or dielectric coating, the probes are operated in a magnetron CCP, which is equipped with a titanium target. We present measurements in metallic and dielectric coating processes with both probes and elaborate advantages and problems of each probe operated in each coating environment. (paper)

Hydrogen retention properties of co-deposition under high-density plasmas in TRIAM-1M

International Nuclear Information System (INIS)

Tokitani, M.; Miyamoto, M.; Tokunaga, K.; Fujiwara, T.; Yoshida, N.; Sakamoto, M.; Zushi, H.; Hanada, K.; TRIAM Group,; Nagata, S.; Tsuchiya, B.

2007-01-01

Retention of hydrogen in co-deposits formed under high-density plasma discharge in TRIAM-1M was studied. In order to quantify the retained hydrogen, material probe experiments were performed under the high-density (n at e ∼10 19 m -3 ) discharges. After the exposure to the plasma, the quantitative analysis of deposition, hydrogen retention, and microscopic modification of specimens were performed by means of ion beam analysis and transmission electron microscopy. The co-deposits mainly consisted of Mo. The deposition rate of Mo was about ten times higher than that of the low-density discharge case. The hydrogen concentrations (H/Mo) retained in the co-deposits were 0.06-0.17, which was much higher than that in bulk-Mo and almost equal to the low-density case. These results indicate that as long as the co-deposition layers are continuously formed, strong wall pumping in TRIAM-1M is maintained during the discharges

Tailored adhesion behavior of polyelectrolyte thin films deposited on plasma-treated poly(dimethylsiloxane) for functionalized membranes

Energy Technology Data Exchange (ETDEWEB)

Bassil, Joelle, E-mail: joelle.bassil@univ-lorraine.fr [Institut Jean Lamour (IJL), UMR CNRS 7198, Université de Lorraine, Parc de Saurupt CS50840, 54011 Nancy (France); Alem, Halima, E-mail: halima.alem@univ-lorraine.fr [Institut Jean Lamour (IJL), UMR CNRS 7198, Université de Lorraine, Parc de Saurupt CS50840, 54011 Nancy (France); Henrion, Gérard, E-mail: gerard.henrion@univ-lorraine.fr [Institut Jean Lamour (IJL), UMR CNRS 7198, Université de Lorraine, Parc de Saurupt CS50840, 54011 Nancy (France); Roizard, Denis, E-mail: denis.roizard@univ-lorraine.fr [Laboratoire Réactions et Génie des Procédés (LRGP), UMR CNRS 7274, ENSIC, Université de Lorraine, 1 rue Grandville, 54011 Nancy (France)

2016-04-30

Graphical abstract: - Highlights: • The surface of PDMS membrane was first modified by Ar/O{sub 2} plasma to increase its surface energy. • Subsequently, a homogeneous multilayer of the well-known couple of polyelectrolyte PDADMAC/PSS was deposited on the plasma treated PDMS. • The relation between the parameters of the modification processes and the morphology, wettability, structure and adhesion of the polyelectrolytes layers based PDMS membranes is investigated and enlightened. - Abstract: Completely homogenous films formed via the layer-by-layer assembly of poly(diallyldimethylammonium chloride) (PDADMAC) and the poly(styrene sulfonate) were successfully obtained on plasma-treated poly(dimethylsiloxane) (PDMS) substrates. To modify the hydrophobicity of the PDMS surface, a cold plasma treatment was previously applied to the membrane, which led to the creation of hydrophilic groups on the surface of the membrane. PDMS wettability and surface morphology were successfully correlated with the plasma parameters. A combination of contact angle measurements, scanning electron microscopy (SEM) and atomic force microscopy (AFM) analysis was used to demonstrate that homogeneous and hydrophilic surfaces could be achieved on PDMS cold-plasma-treated membranes. The stability of the assembled PEL layer on the PDMS was evaluated using a combination of pull-off testing and X-ray photoelectron spectroscopy (XPS), which confirmed the relevance of a plasma pre-treatment as the adhesion of the polyelectrolyte multilayers was greatly enhanced when the deposition was completed on an activated PDMS surface at 80 W for 5 min.

Induction plasma deposition technology for nuclear fuel fabrication

International Nuclear Information System (INIS)

Jung, I. H.; Bae, K. K.; Lee, J. W.; Kim, T. K.; Yang, M. S.

1998-01-01

A study on induction plasma deposition with ceramic materials, yttria-stabilized-zirconia ZrO 2 -Y 2 O 3 (m.p. 2640 degree C), was conducted with a view of developing a new method for nuclear fuel fabrication. Before making dense pellets of more than 96%T.D., the spraying condition was optimized through the process parameters, such as chamber pressure, plasma plate power, powder spraying distance, sheath gas composition, probe position, particle size and powders of different morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed a 97.11% theoretical density when the sheath gas flow rate was Ar/H 2 120/20 l/min, probe position 8cm, particle size -75 μm and spraying distance 22cm by AMDRY146 powder. The degree of influence of the main effects on density were powder morphology, particle size, sheath gas composition, plate power and spraying distance, in that order. Among the two parameter interactions, the sheath gas composition and chamber pressure affects density greatly. By using the multi-pellets mold of wheel type, the pellet density did not exceed 94%T.D., owing to the spraying angle

Deposition of nanocomposite Cu-TiO2 using heterogeneous colliding plasmas

Science.gov (United States)

Pandey, Pramod K.; Thareja, Raj K.; Singh, Ravi Pratap; Costello, John T.

2018-03-01

The formation of CuTiO2 nanocomposites has been observed in an experiment in which laser plasma plumes of Cu and Ti collide and stagnate in an oxygen atmosphere. The inherent advantage of this technique lies in its simplicity and flexibility where laser, target composition and geometry along with ambient atmosphere are all controllable parameters through which the stoichiometry of the deposited nanocomposites may be selected. The experiment has been performed at three oxygen ambient pressures 10-4, 10-2, 100 mbar and we observe its effect on stoichiometry, and morphology of the deposited nanocomposites. Here, we show how the stoichiometry of deposited nanocomposites can be readily controlled by changing just one parameter, namely the ambient oxygen pressure. The different peaks of photoluminescence spectra λ =390{ nm}( {E=3.18{ eV}} ) corresponding to the anatase phase of TiO2, along with the peaks at λ = 483 nm ( E = 2.56 eV) and 582 nm ( E = 2.13 eV) of deposited nanocomposites, shows the doping/blending effect on the band gaps which may potentially be of value in solar cell technology. The technique can, in principle, be extended to include nanocomposites of other materials making it potentially more widely applicable.

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Energy Technology Data Exchange (ETDEWEB)

Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2015-07-28

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

Characterization of Pb(Zr, Ti)O3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes

International Nuclear Information System (INIS)

Lee, Hee-Chul; Lee, Won-Jong

2002-01-01

Structural and electrical characteristics of Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films deposited on various Ir-based electrodes (Ir, IrO 2 , and Pt/IrO 2 ) using electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. On the Ir electrode, stoichiometric PZT films with pure perovskite phase could be obtained over a very wide range of processing conditions. However, PZT films prepared on the IrO 2 electrode contain a large amount of PbO x phases and exhibited high Pb-excess composition. The deposition characteristics were dependent on the behavior of PbO molecules on the electrode surface. The PZT thin film capacitors prepared on the Ir bottom electrode showed different electrical properties depending on top electrode materials. The PZT capacitors with Ir, IrO 2 , and Pt top electrodes showed good leakage current characteristics, whereas those with the Ru top electrode showed a very high leakage current density. The PZT capacitor exhibited the best fatigue endurance with an IrO 2 top electrode. An Ir top electrode provided better fatigue endurance than a Pt top electrode. The PZT capacitor with an Ir-based electrode is thought to be attractive for the application to ferroelectric random access memory devices because of its wide processing window for a high-quality ferroelectric film and good polarization, fatigue, and leakage current characteristics

Plasma Membranes Modified by Plasma Treatment or Deposition as Solid Electrolytes for Potential Application in Solid Alkaline Fuel Cells

Science.gov (United States)

Reinholdt, Marc; Ilie, Alina; Roualdès, Stéphanie; Frugier, Jérémy; Schieda, Mauricio; Coutanceau, Christophe; Martemianov, Serguei; Flaud, Valérie; Beche, Eric; Durand, Jean

2012-01-01

In the highly competitive market of fuel cells, solid alkaline fuel cells using liquid fuel (such as cheap, non-toxic and non-valorized glycerol) and not requiring noble metal as catalyst seem quite promising. One of the main hurdles for emergence of such a technology is the development of a hydroxide-conducting membrane characterized by both high conductivity and low fuel permeability. Plasma treatments can enable to positively tune the main fuel cell membrane requirements. In this work, commercial ADP-Morgane® fluorinated polymer membranes and a new brand of cross-linked poly(aryl-ether) polymer membranes, named AMELI-32®, both containing quaternary ammonium functionalities, have been modified by argon plasma treatment or triallylamine-based plasma deposit. Under the concomitant etching/cross-linking/oxidation effects inherent to the plasma modification, transport properties (ionic exchange capacity, water uptake, ionic conductivity and fuel retention) of membranes have been improved. Consequently, using plasma modified ADP-Morgane® membrane as electrolyte in a solid alkaline fuel cell operating with glycerol as fuel has allowed increasing the maximum power density by a factor 3 when compared to the untreated membrane. PMID:24958295

Plasma membranes modified by plasma treatment or deposition as solid electrolytes for potential application in solid alkaline fuel cells.

Science.gov (United States)

Reinholdt, Marc; Ilie, Alina; Roualdès, Stéphanie; Frugier, Jérémy; Schieda, Mauricio; Coutanceau, Christophe; Martemianov, Serguei; Flaud, Valérie; Beche, Eric; Durand, Jean

2012-07-30

In the highly competitive market of fuel cells, solid alkaline fuel cells using liquid fuel (such as cheap, non-toxic and non-valorized glycerol) and not requiring noble metal as catalyst seem quite promising. One of the main hurdles for emergence of such a technology is the development of a hydroxide-conducting membrane characterized by both high conductivity and low fuel permeability. Plasma treatments can enable to positively tune the main fuel cell membrane requirements. In this work, commercial ADP-Morgane® fluorinated polymer membranes and a new brand of cross-linked poly(aryl-ether) polymer membranes, named AMELI-32®, both containing quaternary ammonium functionalities, have been modified by argon plasma treatment or triallylamine-based plasma deposit. Under the concomitant etching/cross-linking/oxidation effects inherent to the plasma modification, transport properties (ionic exchange capacity, water uptake, ionic conductivity and fuel retention) of membranes have been improved. Consequently, using plasma modified ADP-Morgane® membrane as electrolyte in a solid alkaline fuel cell operating with glycerol as fuel has allowed increasing the maximum power density by a factor 3 when compared to the untreated membrane.

Deposition and surface treatment of Ag-embedded indium tin oxide by plasma processing

International Nuclear Information System (INIS)

Kim, Jun Young; Kim, Jae-Kwan; Kim, Ja-Yeon; Kwon, Min-Ki; Yoon, Jae-Sik; Lee, Ji-Myon

2013-01-01

Ag-embedded indium tin oxide (ITO) films were deposited on Corning 1737 glass by radio-frequency magnetron sputtering under an Ar or Ar/O 2 mixed gas ambient with a combination of ITO and Ag targets that were sputtered alternately by switching on and off the shutter of the sputter gun. The effects of a subsequent surface treatment using H 2 and H 2 + O 2 mixed gas plasma were also examined. The specific resistance of the as-deposited Ag-embedded ITO sample was lower than that of normal ITO. The transmittance was quenched when Ag was incorporated in ITO. To enhance the specific resistance of Ag-embedded ITO, a surface treatment was conducted using H 2 or H 2 + O 2 mixed gas plasma. Although all samples showed improved specific resistance after the H 2 plasma treatment, the transmittance was quenched due to the formation of agglomerated metals on the surface. The specific resistance of the film was improved without any deterioration of the transmittance after a H 2 + O 2 mixed gas plasma treatment. - Highlights: • Ag-embedded indium tin oxide was deposited. • The contact resistivity was decreased by H 2 + O 2 plasma treatment. • The process was carried out at room temperature without thermal treatment. • The mechanism of enhancing the contact resistance was clarified

A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

Energy Technology Data Exchange (ETDEWEB)

Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

1995-12-31

Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

Characteristics of SiOx-containing hard film prepared by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane or vinyltrimethylsilane and post oxygen plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Wei, Yi-Syuan; Liu, Wan-Yu; Wu, Hsin-Ming [Department of Materials Engineering, Tatung University, Taipei, 104, Taiwan (China); Chen, Ko-Shao, E-mail: kschen@ttu.edu.tw [Department of Materials Engineering, Tatung University, Taipei, 104, Taiwan (China); Cech, Vladimir [Institute of Materials Chemistry, Brno University of Technology (Czech Republic)

2017-03-01

This study, monomers of hexamethyldisilazane (HMDSZ) and vinyltrimethylsilane (VTMS) were respectively used to deposit on the surface of polyethylene terephthalate (PET) substrate by plasma enhanced chemical vapor deposition. Oxygen plasma treatment follows the HMDSZ and VTMS deposition to produce a hydrophilic surface film on the deposited surface. Time for HMDSZ and VTMS plasma deposition was changed to investigate its influences on water contact angle, deposited film thickness, refractive index, and friction coefficient properties. The surface morphologies of the processed samples were observed by scanning electron microscope and their chemical compositions were measured by X-ray photoelectron spectroscopy. At 550 nm wavelength, the optical transmittance of PET after the HMDSZ treatment decreases from 89% to 83%, but increases from 89% to 95% for the VTMS treatment. With increase in HMDSZ and VTMS deposition times, the film thickness increases and the refractive index decreases. Result revealed by XPS, SiO{sub 2} film is formed on the sample surface after the O{sub 2} plasma treatment. The film adhesion capability by the HMDSZ+O{sub 2} and VTMS+O{sub 2} treatment was stronger than that by the HMDSZ and VTMS treatment only. The SiOx films produced by HMDSZ+O{sub 2} and VTMS+O{sub 2} treatment can increase the film hardness and improve light transmittance. - Highlights: • With increase in HMDSZ and VTMS deposition times, the film thickness increases and the refractive index decreases. • The optical transmittance of PET after the VTMS treatment increases from 89% to 95%. • The SiO{sub 2} films deposited by HMDSZ+O{sub 2} and VTMS+O{sub 2} plasma can increase the film hardness and improve light transmittance. • It is expected that they can be applied to the optical transmittance protective film on plastic substrate in the future.

Fast Waves Mode Conversion and Energy Deposition in Simulated, Pre-Heated, Neoclassical, Tight Aspect Ratio Tokamak Plasmas

International Nuclear Information System (INIS)

Bruma, C.; Cuperman, S.; Komoshvili, K.

1999-01-01

Some basic aspects of wave-plasma interaction of interest for tight aspect ratio spherical tokamaks are investigated theoretically. The following scenario is considered: A. Fast magnetosonic waves are launched by an external antenna into a simulated spherical Tokamak plasma; these waves are converted to Alfven waves at points (layer) satisfying the Alfven resonance condition. B. The simulated spherical tokamaks-plasma has a circular cross-section and toroidicity effects are simulated by Grad-Shafranov type, radially dependent axial magnetic field and its shear. (J. Actual equilibrium profiles (magnetic field, pressure and current) observed in the low field side (LFS) of spherical tokamaks (viz., START at Culham, UK) are used. D. The study is based on the numerical solution of the full e.m. wave equation which includes a quite general resistive MHD dielectric tensor, with consideration of equilibrium current and neoclassical effects. Two kinds of results will be presented: I. Proofs validating the computational algorithm used and including convergence and energy conservation. II. Exact quantitative results concerning (i) the structure and space dependence of the mode-converted Alfven waves and (ii) the basic features of the deposited p over . The dependence of the results on the launched wave characteristics (wave numbers, frequency and intensity) as well as on those of the equilibrium plasma (equilibrium current, neoclassical resistivity and electron inertia) will be discussed

Iridium Coating Deposited by Double Glow Plasma Technique — Effect of Glow Plasma on Structure of Coating at Single Substrate Edge

International Nuclear Information System (INIS)

Wu Wangping; Chen Zhaofeng; Liu Yong

2012-01-01

Double glow plasma technique has a high deposition rate for preparing iridium coating. However, the glow plasma can influence the structure of the coating at the single substrate edge. In this study, the iridium coating was prepared by double glow plasma on the surface of single niobium substrate. The microstructure of iridium coating at the substrate edge was observed by scanning electron microscopy. The composition of the coating was confirmed by energy dispersive spectroscopy and X-ray diffraction. There was a boundary between the coating and the substrate edge. The covered area for the iridium coating at the substrate edge became fewer and fewer from the inner area to the outer flange-area. The bamboo sprout-like particles on the surface of the substrate edge were composed of elemental niobium. The substrate edge was composed of the Nb coating and there was a transition zone between the Ir coating and the Nb coating. The interesting phenomenon of the substrate edge could be attributed to the effects of the bias voltages and the plasma cloud in the deposition chamber. The substrate edge effect could be mitigated or eliminated by adding lots of small niobium plates around the substrate in a deposition process. (plasma technology)

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Laser ablation and deposition of wide bandgap semiconductors: plasma and nanostructure of deposits diagnosis

Science.gov (United States)

Sanz, M.; López-Arias, M.; Rebollar, E.; de Nalda, R.; Castillejo, M.

2011-12-01

Nanostructured CdS and ZnS films on Si (100) substrates were obtained by nanosecond pulsed laser deposition at the wavelengths of 266 and 532 nm. The effect of laser irradiation wavelength on the surface structure and crystallinity of deposits was characterized, together with the composition, expansion dynamics and thermodynamic parameters of the ablation plume. Deposits were analyzed by environmental scanning electron microscopy, atomic force microscopy and X-ray diffraction, while in situ monitoring of the plume was carried out with spectral, temporal and spatial resolution by optical emission spectroscopy. The deposits consist of 25-50 nm nanoparticle assembled films but ablation in the visible results in larger aggregates (150 nm) over imposed on the film surface. The aggregate free films grown at 266 nm on heated substrates are thicker than those grown at room temperature and in the former case they reveal a crystalline structure congruent with that of the initial target material. The observed trends are discussed in reference to the light absorption step, the plasma composition and the nucleation processes occurring on the substrate.

Self-enhanced plasma discharge effect in the deposition of diamond-like carbon films on the inner surface of slender tube

Energy Technology Data Exchange (ETDEWEB)

Xu, Yi [Department of 702, Beihang University, Beijing (China); Li, Liuhe, E-mail: liliuhe@buaa.edu.cn [Department of 702, Beihang University, Beijing (China); Luo, Sida [Department of 702, Beihang University, Beijing (China); International Research Institute for Multidisciplinary Science, Beihang University, Beijing (China); Lu, Qiuyuan [Dong Feng Commercial Vehicle Technical Center, Dong Feng Commercial Vehicle Co., LTD, Wuhan (China); Gu, Jiabin; Lei, Ning [Department of 702, Beihang University, Beijing (China); Huo, Chunqin [Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Shenzhen University, Guangdong (China)

2017-01-30

Highlights: • Effect of inner surface materials of tubes on plasma discharge is examined. • Electron mean free path is used to analyze the films deposition. • Secondary electrons emitted from inner surface of tube enhance plasma discharge. - Abstract: Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PIII&D) have been proved to be highly effective for depositing diamond-like carbon (DLC) films on the inner surface of the slender quartz tube with a deposition rate of 1.3 μm/min. Such a high-efficiency DLC films deposition was explained previously as the short electrons mean free path to cause large collision frequency between electrons and neutral particles. However, in this paper, we found that the inner surface material of the tube itself play a vital role on the films deposition. To disclose the mechanism of this phenomenon, the effect of different inner surface materials on plasma discharge was experimentally and theoretically investigated. Then a self-enhancing plasma discharge is discovered. It is found that secondary electrons emitted from the inner surface material, whatever it is the tube inner surface or deposited DLC films, can dramatically enhance the plasma discharge to improve the DLC films deposition rate.

Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

2013-01-15

Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

International Nuclear Information System (INIS)

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

2013-01-01

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

Rapid plasma treatment of polyimide for improved adhesive and durable copper film deposition

International Nuclear Information System (INIS)

Usami, Kenji; Ishijima, Tatsuo; Toyoda, Hirotaka

2012-01-01

To improve adhesion at the interface between Cupper (Cu) and polyimide (PI) layers, a PI film surface was treated with a microwave-excited plasma. The Ar/N 2 plasma treatment improved the Cu adhesion force to 10 N/cm even for PI substrates with absorbed water. A dramatic improvement of the adhesion durability was achieved by depositing a thin carbon film (C) on the PI substrate as an interlayer between PI and Cu using a microwave plasma followed by treatment with the Ar/N 2 plasma prior to the Cu deposition. After a 20-h accelerated aging test, the reduction of the adhesion force for the resulting Cu/C/PI sample was only 10%, whereas that for the Cu/PI sample was 55%. To gain insight into the film properties, the interface between the Cu and PI film was investigated by X-ray photoelectron spectroscopy.

Erosion of pyrolytic carbon under high surface energy deposition from a pulsed hydrogen plasma

International Nuclear Information System (INIS)

Bolt, H.

1992-01-01

Carbon materials are widely applied as plasma facing materials in nuclear fusion devices and are also the prime candidate materials for the next generation of experimental fusion reactors. During operation these materials are frequently subjected to high energy deposition from plasma disruptions. The erosion of carbon materials is regarded as the main issue governing the operational lifetime of plasma facing components. Laboratory experiments have been performed to study the thermal erosion behaviour of carbon in a plasma environment. In the experiments the surface of pyrolytic carbon specimens was exposed to pulsed energy deposition of up to 3.8 MJ m -2 from a hydrogen plasma. The behaviour of the eroded carbon species in the plasma was measured by time-resolved and space-resolved spectroscopy. Intense line radiation of ionic carbon has been measured in the plasma in front of the carbon surface. The results show that the eroded carbon is immediately ionised in the vicinity of the material surface, with a fraction of it being ionised to the double-charged state. (Author)

Atmospheric Plasma Deposition of SiO2 Films for Adhesion Promoting Layers on Titanium

Directory of Open Access Journals (Sweden)

Liliana Kotte

2014-12-01

Full Text Available This paper evaluates the deposition of silica layers at atmospheric pressure as a pretreatment for the structural bonding of titanium (Ti6Al4V, Ti15V3Cr3Sn3Al in comparison to an anodizing process (NaTESi process. The SiO2 film was deposited using the LARGE plasma source, a linearly extended DC arc plasma source and applying hexamethyldisiloxane (HMDSO as a precursor. The morphology of the surface was analyzed by means of SEM, while the characterization of the chemical composition of deposited plasma layers was done by XPS and FTIR. The long-term durability of bonded samples was evaluated by means of a wedge test in hot/wet condition. The almost stoichiometric SiO2 film features a good long-term stability and a high bonding strength compared to the films produced with the wet-chemical NaTESi process.

Atmospheric pulsed laser deposition of plasmonic nanoparticle films of silver with flowing gas and flowing atmospheric plasma

Science.gov (United States)

Khan, T. M.; Pokle, A.; Lunney, J. G.

2018-04-01

Two methods of atmospheric pulsed laser deposition of plasmonic nanoparticle films of silver are described. In both methods the ablation plume, produced by a 248 nm, 20 ns excimer laser in gas, is strongly confined near the target and forms a nanoparticle aerosol. For both the flowing gas, and the atmospheric plasma from a dielectric barrier discharge plasma source, the aerosol is entrained in the flow and carried to a substrate for deposition. The nanoparticle films produced by both methods were examined by electron microscopy and optical absorption spectroscopy. With plasma assistance, the deposition rate was significantly enhanced and the film morphology altered. With argon gas, isolated nanoparticles of 20 nm size were obtained, whereas in argon plasma, the nanoparticles are aggregated in clusters of 90 nm size. Helium gas also leads to the deposition of isolated nanoparticles, but with helium plasma, two populations of nanoparticles are observed: one of rounded particles with a mean size of 26 nm and the other of faceted particles with a mean size 165 nm.

Development of an Organosilicon-Based Superhydrophobic/Icephobic Surface Using an Atmospheric Pressure Plasma Jet =

Science.gov (United States)

Asadollahi, Siavash

During the past few decades, plasma-based surface treatment methods have gained a lot of interest in various applications such as thin film deposition, surface etching, surface activation and/or cleaning, etc. Generally, in plasma-based surface treatment methods, high-energy plasma-generated species are utilized to modify the surface structure or the chemical composition of a substrate. Unique physical and chemical characteristics of the plasma along with the high controllability of the process makes plasma treatment approaches very attractive in several industries. Plasma-based treatment methods are currently being used or investigated for a number of practical applications, such as adhesion promotion in auto industry, wound management and cancer treatment in biomedical industry, and coating development in aerospace industry. In this study, a two-step procedure is proposed for the development of superhydrophobic/icephobic coatings based on atmospheric-pressure plasma treatment of aluminum substrates using air and nitrogen plasma. The effects of plasma parameters on various surface properties are studied in order to identify the optimum conditions for maximum coating efficiency against icing and wetting. In the first step, the interactions between air or nitrogen plasma and the aluminum surface are studied. It is shown that by reducing jet-to-substrate distance, air plasma treatment, unlike nitrogen plasma treatment, is capable of creating micro-porous micro-roughened structures on the surface, some of which bear a significant resemblance to the features observed in laser ablation of metals with short and ultra-short laser pulses. The formation of such structures in plasma treatment is attributed to a transportation of energy from the jet to the surface over a very short period of time, in the range of picoseconds to microseconds. This energy transfer is shown to occur through a streamer discharge from the rotating arc source in the jet body to a close proximity of

Shaping thin film growth and microstructure pathways via plasma and deposition energy: a detailed theoretical, computational and experimental analysis.

Science.gov (United States)

Sahu, Bibhuti Bhusan; Han, Jeon Geon; Kersten, Holger

2017-02-15

Understanding the science and engineering of thin films using plasma assisted deposition methods with controlled growth and microstructure is a key issue in modern nanotechnology, impacting both fundamental research and technological applications. Different plasma parameters like electrons, ions, radical species and neutrals play a critical role in nucleation and growth and the corresponding film microstructure as well as plasma-induced surface chemistry. The film microstructure is also closely associated with deposition energy which is controlled by electrons, ions, radical species and activated neutrals. The integrated studies on the fundamental physical properties that govern the plasmas seek to determine their structure and modification capabilities under specific experimental conditions. There is a requirement for identification, determination, and quantification of the surface activity of the species in the plasma. Here, we report a detailed study of hydrogenated amorphous and crystalline silicon (c-Si:H) processes to investigate the evolution of plasma parameters using a theoretical model. The deposition processes undertaken using a plasma enhanced chemical vapor deposition method are characterized by a reactive mixture of hydrogen and silane. Later, various contributions of energy fluxes on the substrate are considered and modeled to investigate their role in the growth of the microstructure of the deposited film. Numerous plasma diagnostic tools are used to compare the experimental data with the theoretical results. The film growth and microstructure are evaluated in light of deposition energy flux under different operating conditions.

Plasma-assisted deposition of microcapsule containing Aloe vera extract for cosmeto-textiles

Science.gov (United States)

Nascimento do Carmo, S.; Zille, A.; Souto, A. P.

2017-10-01

Dielectric Barrier Discharge (DBD) atmospheric-pressure plasma was employed to enhance the deposition of commercial microcapsules (MCs) containing Aloe vera extract onto a cotton/polyester (50:50) fabric. DBD conditions were optimized in term of energy dosage and contact angle. The MCs were applied by padding and printing methods and the coatings were characterized in terms of SEM and FTIR. MCs display a spherical shape with size between 2 and 8 μm with an average wall thickness of 0.5 μm. The MCs applied by printing and pretreated with a plasma dosage of 1.6 kW m2 min-1 showed the best results with an increased adhesion of 200% and significant penetration of MCs into the fibres network. Plasma printed fabric retained 230% more MCs than untreated fabric after 10 washing cycles. However, the coating resistance between unwashed and washed samples was only improved by 5%. Considering the fact that no binder or crosslinking agents were used, the DBD plasma-assisted deposition of MCs revealed to be a promising environmental safe and low cost coating technology.

Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system

Czech Academy of Sciences Publication Activity Database

Taylor, Andrew; Ashcheulov, Petr; Čada, Martin; Fekete, Ladislav; Hubík, Pavel; Klimša, Ladislav; Olejníček, Jiří; Remeš, Zdeněk; Jirka, Ivan; Janíček, P.; Bedel-Pereira, E.; Kopeček, Jaromír; Mistrík, J.; Mortet, Vincent

2015-01-01

Roč. 212, č. 11 (2015), s. 2418-2423 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * electrical conductivity * nanocrystalline materials * optical emission spectroscopy * plasma enhanced chemical vapour deposition * SiC Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

Science.gov (United States)

Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

2009-09-01

In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

2008-01-01

The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

2001-01-01

Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

Ion-substituted calcium phosphate coatings deposited by plasma-assisted techniques: A review.

Science.gov (United States)

Graziani, Gabriela; Bianchi, Michele; Sassoni, Enrico; Russo, Alessandro; Marcacci, Maurilio

2017-05-01

One of the main critical aspects behind the failure or success of an implant resides in its ability to fast bond with the surrounding bone. To boost osseointegration, the ideal implant material should exhibit composition and structure similar to those of biological apatite. To this aim, the most common approach is to coat the implant surface with a coating of hydroxyapatite (HA), resembling the main component of mineralized tissues. However, bone apatite is a non-stoichiometric, multi-substituted poorly-crystalline apatite, containing significant amounts of foreign ions, with high biological relevance. Ion-substituted HAs can be deposited by so called "wet methods", which are however poorly reproducible and hardly industrially feasible; at the same time bioactive coatings realized by plasma assisted method, interesting for industrial applications, are generally made of stoichiometric (i.e. un-substituted) HA. In this work, the literature concerning plasma-assisted deposition methods used to deposit ion-substituted HA was reviewed and the last advances in this field discussed. The ions taken into exam are those present in mineralized tissues and possibly having biological relevance. Notably, literature about this topic is scarce, especially relating to in vivo animal and clinical trials; further on, available studies evaluate the performance of substituted coatings from different points of view (mechanical properties, bone growth, coating dissolution, etc.) which hinders a proper evaluation of the real efficacy of ion-doped HA in promoting bone regeneration, compared to stoichiometric HA. Moreover, results obtained for plasma sprayed coatings (which is the only method currently employed for deposition at the industrial scale) were collected and compared to those of novel plasma-assisted techniques, that are expected to overcome its limitations. Data so far available on the topic were discussed to highlight advantages, limitations and possible perspectives of these

Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

Energy Technology Data Exchange (ETDEWEB)

Zambom, Luis da Silva [MPCE-Faculdade de Tecnologia de Sao Paulo - CEETEPS, Pca Coronel Fernando Prestes, 30, Sao Paulo - CEP 01124-060 (Brazil)]. E-mail: zambom@lsi.usp.br; Verdonck, Patrick [PSI-LSI-Escola Politecnica da Universidade de Sao Paulo (Brazil)]. E-mail: patrick@lsi.usp.br

2006-10-25

Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N{sub 2}O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N{sub 2}O gas concentrations, when mixed together with N{sub 2} and SiH{sub 4}, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G{omega} cm, increased the refractive index, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps.

Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition

International Nuclear Information System (INIS)

Sharma, Uttam; Chauhan, Sachin S; Sharma, Jayshree; Sanyasi, A K; Ghosh, J; Choudhary, K K; Ghosh, S K

2016-01-01

The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m 2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS. (paper)

Study of oxygen diluted silane plasmas applied for the deposition of silicium oxyde; Etudes des plasmas organoscilicies dilues en oxygene utilises pour la deposition d'oxyde de silicium

Energy Technology Data Exchange (ETDEWEB)

Magni, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

2001-09-01

Plasma enhanced chemical vapour deposition of thin films such as silicon dioxide is used in many applications such as the insulator production in semiconductor technology or anticorrosion coating in packaging industry as a substitute for aluminium which is less ecological. Oxygen diluted silane plasmas are often utilized to produce SiO{sub 2} film, but the tendency is to work with organosilicon precursors such as HMDSO (hexamethyldisiloxane ) described as non-toxic and requiring less stringent safety and costly installation. In this study, the species in gaseous phase and the powder produced in oxygen-diluted HMDSO plasmas were experimentally characterized in a radiofrequency (RF) capacitively-coupled reactor at 13.56 MHz. Some aspects of plasma enhanced deposition of SiO{sub 2} were studied in a RF magnetron reactor . The gaseous phase of the oxygen-diluted plasmas were studied by infrared absorption spectroscopy and mass spectrometry .The complementarity of these diagnostics allowed to show that the dominant species in gaseous phase come from the homogeneous reaction between oxygen and the radical CH{sub x} (with x 1,2 and 3), abundantly produced in the plasma. Two principal pathways were shown to occur. A first way leads to hydrocarbon formation such as methane (CH{sub 4}) and acetylene (C{sub 2}H{sub 2}), whose partial pressures are close to 2 %. A second way leads to the formation of molecules from the combustion of CH{sub x}, such as formaldehyde (CH{sub 2}O), formic acid (CH{sub 2}O{sub 2}), carbon monoxide (CO), carbon dioxide (CO{sub 2}) and water. Moreover it is shown that the CO{sub 2} results from a heterogeneous reaction between the carbon on the surfaces and the oxygen coming from the plasma. At low dilution conditions, the partial pressures of CO and CO{sub 2} were estimated at 25 and 10 % of the total pressure respectively. In argon or helium diluted HMDSO plasmas, methane, acetylene and hydrogen are the main stable molecules produced in the gaseous

Simulation study of depositing the carbon film on nanoparticles in the magnetized methane plasma

Science.gov (United States)

Mohammadzadeh, Hosein; Pourali, Nima; Ebadi, Zahra

2018-03-01

Plasma coating of nanoparticles in low-temperature magnetized methane plasma is studied by a simulation approach. To this end, by using the global model, the electron temperature and concentration of different species considered in this plasma are determined in the center of a capacitively coupled discharge. Then, the plasma-wall transition region in the presence of an oblique magnetic field is simulated by the multi-component fluid description. Nanoparticles with different radii are injected into the transition region and surface deposition and heating models, as well as dynamics and charging models, are employed to examine the coating process. The results of the simulation show that the non-spherical growth of nanoparticles is affected by the presence of the magnetic field, as with passing time, an oscillating increase is seen in the thickness of the film deposited on nanoparticles. Also, it is shown that the uniformity of the deposited film is dependent on the rotation velocity of nanoparticles. Generally, the obtained results imply that the sphericity of nanoparticles and uniformity of the film coated on them are controllable by the magnitude and orientation of the magnetic field.

Deposition of silicon films in presence of nitrogen plasma— A ...

Indian Academy of Sciences (India)

Unknown

Abstract. A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by.

Electrode assemblies, plasma apparatuses and systems including electrode assemblies, and methods for generating plasma

Science.gov (United States)

Kong, Peter C; Grandy, Jon D; Detering, Brent A; Zuck, Larry D

2013-09-17

Electrode assemblies for plasma reactors include a structure or device for constraining an arc endpoint to a selected area or region on an electrode. In some embodiments, the structure or device may comprise one or more insulating members covering a portion of an electrode. In additional embodiments, the structure or device may provide a magnetic field configured to control a location of an arc endpoint on the electrode. Plasma generating modules, apparatus, and systems include such electrode assemblies. Methods for generating a plasma include covering at least a portion of a surface of an electrode with an electrically insulating member to constrain a location of an arc endpoint on the electrode. Additional methods for generating a plasma include generating a magnetic field to constrain a location of an arc endpoint on an electrode.

Metastable phases in yttrium oxide plasma spray deposits and their effect on coating properties

International Nuclear Information System (INIS)

Gourlaouen, V.; Schnedecker, G.; Boncoeur, M.; Lejus, A.M.; Collongues, R.

1993-01-01

Yttrium oxide coatings were obtained by plasma spray. Structural investigations on these deposits show that, due to the drastic conditions of this technique, a minor monoclinic B phase is formed in the neighborhood of the major cubic C form. The authors discuss here the influence of different plasma spray parameters on the amount of the B phase formed. They describe also the main properties of Y 2 O 3 B and C phases in these deposits such as structural characteristics, thermal stability and mechanical behavior

Plasma-assisted ALD for the conformal deposition of SiO2 : process, material and electronic properties

NARCIS (Netherlands)

Dingemans, G.; Helvoirt, van C.A.A.; Pierreux, D.; Keuning, W.; Kessels, W.M.M.

2012-01-01

Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail.

Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

2015-11-02

Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

2014-04-01

The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

Science.gov (United States)

Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

2018-03-14

We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

Including plasma and fusion topics in the science education in school

International Nuclear Information System (INIS)

Kado, Shinichiro

2015-01-01

Yutori education (more relaxed education policy) started with the revision of the Courses of Study to introduce 'five-day week system' in 1989, continued with the reduction of the content of school lessons by 30% in 1998, and ended with the introduction of the New Courses of Study in 2011. Focusing on science education, especially in the topics of plasma and nuclear fusion, the modality of the education system in Japan is discussed considering the transition of academic performance based on the Program for International Student Assessment (PISA) in comparison with the examples in other countries. Particularly, the issues with high school textbooks are pointed out from the assessment of current textbooks, and the significance and the need for including the topic of 'plasma' in them are stated. Lastly, in order to make the general public acknowledged with plasma and nuclear fusion, it is suggested to include them also in junior high school textbooks, by briefly mentioning the terms related to plasma, solar wind, aurora phenomenon, and nuclear fusion energy. (S.K.)

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

NARCIS (Netherlands)

O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

2017-01-01

Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

Investigation of plasma potential and pulsed discharge characteristics in enhanced glow discharge plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Li Liuhe; Lu Qiuyuan; Fu, Ricky K.Y.; Chu, Paul K.

2009-01-01

Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PII and D) does not require external plasma sources. In this technique, the plasma is produced by self-glow discharge when a high negative voltage is applied to the sample. The small-area, pointed-shape hollow anode and large area tabular cathode form an electron-focused electric field. Using a special electric field design, the electrons from either the plasma or target (secondary electrons) are focused to a special hollow anode. As a result of the special electron-focusing field, the self-glow discharge process can be enhanced to achieve effective ion implantation into the substrate. In this work, the plasma potential distribution is investigated in details and the possible pulse discharge mechanism is discussed. The unique characteristics of the pulsed plasma and plasma extinction are studied.

RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

Science.gov (United States)

Sahin, Halil Turgut

2013-01-01

An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

Topographic, optical and chemical properties of zinc particle coatings deposited by means of atmospheric pressure plasma

International Nuclear Information System (INIS)

Wallenhorst, L.M.; Loewenthal, L.; Avramidis, G.; Gerhard, C.; Militz, H.; Ohms, G.; Viöl, W.

2017-01-01

Highlights: • Zn/ZnO mixed systems were deposited from elemental zinc by a cold plasma-spray process. • Oxidation was confirmed by XPS. • The coatings exhibited a strong absorption in the UV spectral range, thus being suitable as protective layers, e.g. on thermosensitive materials. - Abstract: In this research, topographic, optical and chemical properties of zinc oxide layers deposited by a cold plasma-spray process were measured. Here, zinc micro particles were fed to the afterglow of a plasma spark discharge whereas the substrates were placed in a quite cold zone of the effluent plasma jet. In this vein, almost closed layers were realised on different samples. As ascertained by laser scanning and atomic force microscopic measurements the particle size of the basic layer is in the nanometre scale. Additionally, larger particles and agglomerates were found on its top. The results indicate a partial plasma-induced diminishment of the initial particles, most probably due to melting or vaporisation. It is further shown that the plasma gives rise to an increased oxidation of such particles as confirmed by X-ray photoelectron spectroscopy. Quantitative analysis of the resulting mixed layer was performed. It is shown that the deposited layers consist of zinc oxide and elemental zinc in approximately equal shares. In addition, the layer's band gap energy was determined by spectroscopic analysis. Here, considerable UV blocking properties of the deposited layers were observed. Possible underlying effects as well as potential applications are presented.

Topographic, optical and chemical properties of zinc particle coatings deposited by means of atmospheric pressure plasma

Energy Technology Data Exchange (ETDEWEB)

Wallenhorst, L.M., E-mail: lena.wallenhorst@hawk-hhg.de [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Loewenthal, L.; Avramidis, G. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Gerhard, C. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Fraunhofer Institute for Surface Engineering and Thin Films, Application Center for Plasma and Photonics, Von-Ossietzky-Str. 100, 37085 Göttingen (Germany); Militz, H. [Wood Biology and Wood Products, Burckhardt Institute, Georg-August-University Göttingen, Büsgenweg 4, 37077 Göttingen (Germany); Ohms, G. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Viöl, W. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Fraunhofer Institute for Surface Engineering and Thin Films, Application Center for Plasma and Photonics, Von-Ossietzky-Str. 100, 37085 Göttingen (Germany)

2017-07-15

Highlights: • Zn/ZnO mixed systems were deposited from elemental zinc by a cold plasma-spray process. • Oxidation was confirmed by XPS. • The coatings exhibited a strong absorption in the UV spectral range, thus being suitable as protective layers, e.g. on thermosensitive materials. - Abstract: In this research, topographic, optical and chemical properties of zinc oxide layers deposited by a cold plasma-spray process were measured. Here, zinc micro particles were fed to the afterglow of a plasma spark discharge whereas the substrates were placed in a quite cold zone of the effluent plasma jet. In this vein, almost closed layers were realised on different samples. As ascertained by laser scanning and atomic force microscopic measurements the particle size of the basic layer is in the nanometre scale. Additionally, larger particles and agglomerates were found on its top. The results indicate a partial plasma-induced diminishment of the initial particles, most probably due to melting or vaporisation. It is further shown that the plasma gives rise to an increased oxidation of such particles as confirmed by X-ray photoelectron spectroscopy. Quantitative analysis of the resulting mixed layer was performed. It is shown that the deposited layers consist of zinc oxide and elemental zinc in approximately equal shares. In addition, the layer's band gap energy was determined by spectroscopic analysis. Here, considerable UV blocking properties of the deposited layers were observed. Possible underlying effects as well as potential applications are presented.

Study of hard diamond-like carbon films deposited in an inductively coupled plasma source

International Nuclear Information System (INIS)

Yu Shiji; Ma Tengcai

2003-01-01

Chemical vapor deposition of the hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS). The microscopy, microhardness, deposition rate and structure characteristic of the DLC films were analyzed. It is shown that the ICPS is suitable for the hard DLC film deposition at relatively low substrate negative bias voltage, and the substrate negative bias voltage greatly affects chemical vapor deposition of the DLC film and its quality

Deposition and surface characterization of nanoparticles of zinc oxide using dense plasma focus device in nitrogen atmosphere

International Nuclear Information System (INIS)

Malhotra, Yashi; Srivastava, M P; Roy, Savita

2010-01-01

Nanoparticles of zinc oxide from zinc oxide pellets in the nitrogen plasma atmosphere are deposited on n and p type silicon substrates using Dense Plasma Focus device. The hot and dense nitrogen plasma formed during the focus phase ionizes the ZnO pellet, which then move upward in a fountain like shape and gets deposited on substrates which are placed above the top of the anode. Structural and surface properties of the deposited ZnO are investigated using X-ray diffraction and Atomic force microscope (AFM). X-ray spectra shows the diffraction plane (002) of ZnO nanoparticles deposited on Si with few shots in nitrogen atmosphere. AFM investigations revealed that there are nanoparticles of size between 15-80 nm on n-Si and p-Si substrates. The deposition on n-type Si is better than the p-type Si can be seen from AFM images, this may be due to different orientation of silicon.

Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

Czech Academy of Sciences Publication Activity Database

Čech, V.; Zemek, Josef; Peřina, Vratislav

2008-01-01

Roč. 5, č. 8 (2008), s. 745-752 ISSN 1612-8850 Grant - others:GAČR(CZ) GA104/06/0437 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : ESCA/XPS * FTIR * plasma-enhanced chemical vapor deposition (PECVD) * Rutherford back-scattering (RBS) * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.921, year: 2008

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

NARCIS (Netherlands)

Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

1999-01-01

Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

Science.gov (United States)

Mousinho, A. P.; Mansano, R. D.

2015-03-01

Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

Deposition of silica protected luminescent layers of Eu:GdVO_4 nanoparticles assisted by atmospheric pressure plasma jet

International Nuclear Information System (INIS)

Moretti, Elisa; Pizzol, Giorgia; Fantin, Marina; Enrichi, Francesco; Scopece, Paolo; Nuñez, Nuria O.; Ocaña, Manuel; Benedetti, Alvise; Polizzi, Stefano

2016-01-01

Eu:GdVO_4 nanophosphors with an average size of 60 nm, synthesized by a facile solvothermal method, were deposited on monocrystalline silicon wafers by a spray-coating technique with artworks anti-counterfeiting applications in mind. Atmospheric pressure plasma jet (APPJ) was used to deposit a silica-based layer on top of the nanometric luminescent layer, in order to improve its adhesion to the substrate and to protect it from the environment. The nanophosphors were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Coating composition was investigated by Fourier transform infrared spectroscopy (FT-IR) and its morphology was characterized by scanning electron microscopy (FEG-SEM). The film thickness was evaluated by means of ellipsometry and adhesion was estimated by a peeling test. Luminescent properties of the nanophosphors deposited and fixed on silicon wafers were also measured. The whole layer resulted well-adhered to the silicon substrate, transparent and undetectable in the presence of visible light, but easily activated by UV light source. - Highlights: • Luminescent films were obtained by spray deposition of Eu:GdVO_4 nanophosphors. • Plasma jet deposition of SiO_2 fixed the nanophosphors on the substrate. • Optical properties of nanophosphors were preserved after deposition-fixing process. • Films well-adhered to the substrate, even after a scotch tape peeling test and a scratch test.

Plasma-Sprayed Hydroxylapatite-Based Coatings: Chemical, Mechanical, Microstructural, and Biomedical Properties

Science.gov (United States)

Heimann, Robert B.

2016-06-01

This contribution discusses salient properties and functions of hydroxylapatite (HA)-based plasma-sprayed coatings, including the effect on biomedical efficacy of coating thickness, phase composition and distribution, amorphicity and crystallinity, porosity and surface roughness, cohesion and adhesion, micro- and nano-structured surface morphology, and residual coating stresses. In addition, it will provide details of the thermal alteration that HA particles undergo in the extremely hot plasma jet that leads to dehydroxylated phases such as oxyhydroxylapatite (OHA) and oxyapatite (OA) as well as thermal decomposition products such as tri-(TCP) and tetracalcium phosphates (TTCP), and quenched phases such as amorphous calcium phosphate (ACP). The contribution will further explain the role of ACP during the in vitro interaction of the as-deposited coatings with simulated body fluid resembling the composition of extracellular fluid (ECF) as well as the in vivo responses of coatings to the ECF and the host tissue, respectively. Finally, it will briefly describe performance profiles required to fulfill biological functions of osteoconductive bioceramic coatings designed to improve osseointegration of hip endoprostheses and dental root implants. In large parts, the content of this contribution is a targeted review of work done by the author and his students and coworkers over the last two decades. In addition, it is considered a stepping stone toward a standard operation procedure aimed at depositing plasma-sprayed bioceramic implant coatings with optimum properties.

Metal/Carbon Hybrid Nanostructures Produced from Plasma-Enhanced Chemical Vapor Deposition over Nafion-Supported Electrochemically Deposited Cobalt Nanoparticles

Directory of Open Access Journals (Sweden)

Mohammad Islam

2018-04-01

Full Text Available In this work, we report development of hybrid nanostructures of metal nanoparticles (NP and carbon nanostructures with strong potential for catalysis, sensing, and energy applications. First, the etched silicon wafer substrates were passivated for subsequent electrochemical (EC processing through grafting of nitro phenyl groups using para-nitrobenzene diazonium (PNBT. The X-ray photoelectron spectroscope (XPS and atomic force microscope (AFM studies confirmed presence of few layers. Cobalt-based nanoparticles were produced over dip or spin coated Nafion films under different EC reduction conditions, namely CoSO4 salt concentration (0.1 M, 1 mM, reduction time (5, 20 s, and indirect or direct EC reduction route. Extensive AFM examination revealed NP formation with different attributes (size, distribution depending on electrochemistry conditions. While relatively large NP with >100 nm size and bimodal distribution were obtained after 20 s EC reduction in H3BO3 following Co2+ ion uptake, ultrafine NP (<10 nm could be produced from EC reduction in CoSO4 and H3BO3 mixed solution with some tendency to form oxides. Different carbon nanostructures including few-walled or multiwalled carbon nanotubes (CNT and carbon nanosheets were grown in a C2H2/NH3 plasma using the plasma-enhanced chemical vapor deposition technique. The devised processing routes enable size controlled synthesis of cobalt nanoparticles and metal/carbon hybrid nanostructures with unique microstructural features.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

Science.gov (United States)

Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

2012-07-01

Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

International Nuclear Information System (INIS)

Huang Yanwei; Zhang Qun; Xi Junhua; Ji Zhenguo

2012-01-01

Transparent p-type Li 0.25 Ni 0.75 O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li 0.25 Ni 0.75 O/n-SnO 2 :W was fabricated by depositing n-SnO 2 :W on top of the p-Li 0.25 Ni 0.75 O, which exhibits typical rectifying current-voltage characteristics.

Deposition of stable amine coating onto polycaprolactone nanofibers by low pressure cyclopropylamine plasma polymerization

Energy Technology Data Exchange (ETDEWEB)

Manakhov, Anton [Plasma Technologies, CEITEC — Central European Institute of Technology, Masaryk University, Kotlářská 2, Brno 61137 (Czech Republic); Nečas, David [Plasma Technologies, CEITEC — Central European Institute of Technology, Masaryk University, Kotlářská 2, Brno 61137 (Czech Republic); Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, Brno 61137 (Czech Republic); Čechal, Jan [CEITEC — Central European Institute of Technology, Brno University of Technology, Technická 3058/10, 616 00 Brno (Czech Republic); Pavliňák, David [Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, Brno 61137 (Czech Republic); Eliáš, Marek [Plasma Technologies, CEITEC — Central European Institute of Technology, Masaryk University, Kotlářská 2, Brno 61137 (Czech Republic); Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, Brno 61137 (Czech Republic); and others

2015-04-30

Amine-rich films are of high interest for the bio-applications including drug delivery and tissue engineering thanks to their high reactivity allowing the formation of the covalent linkages between biomolecules and a surface. However, the bio-applications of amine-rich films require their good stability in water which is often achieved at large expenses of the amine concentration. Recently, non-toxic cyclopropylamine (CPA) has been applied for the plasma polymerization of films bearing high NH{sub x} environment combined with the moderate thickness loss (20%) after water immersion for 48 h. In this work, the amine-rich film with the NH{sub x} concentration over 7 at.% was deposited on Si substrates and polycaprolactone nanofiber meshes by using CPA plasma polymerization (pulsed mode) in a vertically oriented stainless steel reactor. The substrates were placed at the radio frequency electrode and the ion bombardment caused by direct-current self-bias was suppressed by using high pressure of 50 Pa. Analysis of samples by scanning electron microscopy did not reveal any cracks in the deposited layer formed during a sample immersion in water. Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) confirmed a slight oxidation of amine groups in water but the film still contained 5 at.% of NH{sub x} (according to the N1s XPS fitting) after the immersion. The rapid oxidation of amine groups was observed during the aging experiment carried out in air at room temperature because FTIR revealed an increase of amide peaks that increased progressively with aging time. However, this oxidation was significantly reduced if the plasma polymer was stored at − 20 °C. Since the films exhibit high amine concentration and very good water stability they have great potential for applications as biocompatible functional coatings. - Highlights: • Cyclopropylamine plasma polymers deposited on polycaprolactone nanofibers • Amine-rich films with high

Deposition of stable amine coating onto polycaprolactone nanofibers by low pressure cyclopropylamine plasma polymerization

International Nuclear Information System (INIS)

Manakhov, Anton; Nečas, David; Čechal, Jan; Pavliňák, David; Eliáš, Marek

2015-01-01

Amine-rich films are of high interest for the bio-applications including drug delivery and tissue engineering thanks to their high reactivity allowing the formation of the covalent linkages between biomolecules and a surface. However, the bio-applications of amine-rich films require their good stability in water which is often achieved at large expenses of the amine concentration. Recently, non-toxic cyclopropylamine (CPA) has been applied for the plasma polymerization of films bearing high NH x environment combined with the moderate thickness loss (20%) after water immersion for 48 h. In this work, the amine-rich film with the NH x concentration over 7 at.% was deposited on Si substrates and polycaprolactone nanofiber meshes by using CPA plasma polymerization (pulsed mode) in a vertically oriented stainless steel reactor. The substrates were placed at the radio frequency electrode and the ion bombardment caused by direct-current self-bias was suppressed by using high pressure of 50 Pa. Analysis of samples by scanning electron microscopy did not reveal any cracks in the deposited layer formed during a sample immersion in water. Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) confirmed a slight oxidation of amine groups in water but the film still contained 5 at.% of NH x (according to the N1s XPS fitting) after the immersion. The rapid oxidation of amine groups was observed during the aging experiment carried out in air at room temperature because FTIR revealed an increase of amide peaks that increased progressively with aging time. However, this oxidation was significantly reduced if the plasma polymer was stored at − 20 °C. Since the films exhibit high amine concentration and very good water stability they have great potential for applications as biocompatible functional coatings. - Highlights: • Cyclopropylamine plasma polymers deposited on polycaprolactone nanofibers • Amine-rich films with high water stability �

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

KAUST Repository

Nayak, Pradipta K.

2012-05-16

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

International Nuclear Information System (INIS)

Au, V; Charles, C; Boswell, R W

2006-01-01

The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

2016-10-01

TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

Science.gov (United States)

Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; da Cruz, Nilson C.; Bortoleto, José R. R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

2013-09-01

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, ETauc, of these films were obtained via transmission spectra in the ultraviolet-visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of ETauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased ETauc. The mechanical properties - hardness, elastic modulus and stiffness - of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

2013-01-01

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E Tauc , of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E Tauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E Tauc . The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

Effect of deposition strategy on the microstructure and mechanical properties of Inconel 625 superalloy fabricated by pulsed plasma arc deposition

International Nuclear Information System (INIS)

Xu, F.J.; Lv, Y.H.; Xu, B.S.; Liu, Y.X.; Shu, F.Y.; He, P.

2013-01-01

Highlights: ► PPAD Inconel 625 sample deposited with ICS strategy exhibits improved surface quality. ► ICS sample exhibits finer microstructure and improved mechanical properties. ► Higher level γ′ and γ″ phases are precipitated in the ICS sample. ► STA heat treatment reduced the concentration of Nb element. ► STA heat treatment improved the mechanical properties of PPAD Inconel 625. -- Abstract: Pulsed plasma arc deposition (PPAD), which combines pulsed plasma cladding with rapid prototyping, is a promising technology for manufacturing near net shape components due to its superiority in cost and convenience of processing. The aim of this study was to investigate the influences of interpass cooling strategy (ICS) and continuous deposition strategy (CDS) on microstructure and mechanical properties of the PPAD Inconel 625 non-ferrous alloy. The as-deposited samples in the two conditions were subjected to the post heat treatment: 980 °C solution treatment + direct aging (STA). The microstructures and mechanical properties of the samples were characterized by means of scanning electron microscopy (SEM) equipped with energy dispersive spectrometer (EDS), transmission electron microscopy (TEM), micro-hardness and tensile testers. It was found that the as-deposited microstructure exhibited homogenous cellular dendrite structure, which grew epitaxially along the deposition direction. The as-deposited microstructure of ICS sample revealed smaller dendritic arm spacing, less niobium segregation and discontinuous finer Laves phase in the interdendritic regions compared to the case of continuous deposition strategy (CDS). The ICS sample exhibited better mechanical properties than CDS sample. After STA heat treatment, a large amount of Laves particles in the interdendritic regions were dissolved, resulting in the reduction of Nb segregation and the precipitation of needle-like δ (Ni 3 Nb). The tensile and yield strength of the as-deposited samples were

From plasma immersion ion implantation to deposition: A historical perspective on principles and trends

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2001-06-14

Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias. In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since 1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques.

Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

International Nuclear Information System (INIS)

Alimov, V.Kh.; Roth, J.; Shu, W.M.; Komarov, D.A.; Isobe, K.; Yamanishi, T.

2010-01-01

A study of the influence of the deposition conditions on the surface morphology and deuterium (D) concentration in tungsten (W) deposition layers formed by magnetron sputtering and in the linear plasma generator has been carried out. Thick W layers (≥0.4 μm) deposited onto copper substrates demonstrate areas of pilling and, after post-deposition heating to 1300 K, flaking-off and fracturing. For thin W layers (≤80 nm) deposited onto stainless steel (SS) and W substrates, no areas of flaking-off and fracturing exist both after deposition and after post-deposition heating to 673 K for the SS substrate and to 1300 K for the W substrate. The concentration of deuterium in the W layers was found to decrease with increasing substrate temperature and with increasing tungsten deposition rate. For layers with relatively high concentration of oxygen (0.20-0.60 O/W), a decrease of the D concentration with increasing substrate temperature is more pronounced than that for layers deposited in good vacuum conditions. To describe the evolution of the D/W ratio with the substrate temperature and the tungsten deposition rate, an empirical equation proposed by De Temmerman and Doerner [J. Nucl. Mater. 389 (2009) 479] but with alternative parameters has been used.

Characteristics of polyimide-based composite membranes fabricated by low-temperature plasma polymerization

International Nuclear Information System (INIS)

Dung Thi Tran; Mori, Shinsuke; Suzuki, Masaaki

2008-01-01

Composite membranes were prepared by the deposition of plasma-polymerized allylamine films onto a porous polyimide substrate. The relationship between the plasma conditions and the membrane characteristics was described in terms of monomer flow rate, plasma discharge power, plasma polymerization time, and so on. Scanning electron microscope (SEM) images indicate that the thickness of the plasma polymer layer increased and the membrane skin pore size decreased gradually with the increasing of plasma polymerization time. Fourier transform infrared (FTIR) spectra demonstrate the appearance of amine groups in the plasma deposited polymer and the contact angle measurements indicate that the hydrophilicity of the membrane surfaces increased significantly after plasma polymerization. The composite membranes can reject salt from sodium chloride feed solution, and membrane separation performance depends strongly on the plasma conditions applied during the preparation of the plasma deposited polymer films

Topographic, optical and chemical properties of zinc particle coatings deposited by means of atmospheric pressure plasma

Science.gov (United States)

Wallenhorst, L. M.; Loewenthal, L.; Avramidis, G.; Gerhard, C.; Militz, H.; Ohms, G.; Viöl, W.

2017-07-01

In this research, topographic, optical and chemical properties of zinc oxide layers deposited by a cold plasma-spray process were measured. Here, zinc micro particles were fed to the afterglow of a plasma spark discharge whereas the substrates were placed in a quite cold zone of the effluent plasma jet. In this vein, almost closed layers were realised on different samples. As ascertained by laser scanning and atomic force microscopic measurements the particle size of the basic layer is in the nanometre scale. Additionally, larger particles and agglomerates were found on its top. The results indicate a partial plasma-induced diminishment of the initial particles, most probably due to melting or vaporisation. It is further shown that the plasma gives rise to an increased oxidation of such particles as confirmed by X-ray photoelectron spectroscopy. Quantitative analysis of the resulting mixed layer was performed. It is shown that the deposited layers consist of zinc oxide and elemental zinc in approximately equal shares. In addition, the layer's band gap energy was determined by spectroscopic analysis. Here, considerable UV blocking properties of the deposited layers were observed. Possible underlying effects as well as potential applications are presented.

Study of oxygen diluted silane plasmas applied for the deposition of silicium oxyde

International Nuclear Information System (INIS)

Magni, D.

2001-09-01

Plasma enhanced chemical vapour deposition of thin films such as silicon dioxide is used in many applications such as the insulator production in semiconductor technology or anticorrosion coating in packaging industry as a substitute for aluminium which is less ecological. Oxygen diluted silane plasmas are often utilized to produce SiO 2 film, but the tendency is to work with organosilicon precursors such as HMDSO (hexamethyldisiloxane ) described as non-toxic and requiring less stringent safety and costly installation. In this study, the species in gaseous phase and the powder produced in oxygen-diluted HMDSO plasmas were experimentally characterized in a radiofrequency (RF) capacitively-coupled reactor at 13.56 MHz. Some aspects of plasma enhanced deposition of SiO 2 were studied in a RF magnetron reactor . The gaseous phase of the oxygen-diluted plasmas were studied by infrared absorption spectroscopy and mass spectrometry .The complementarity of these diagnostics allowed to show that the dominant species in gaseous phase come from the homogeneous reaction between oxygen and the radical CH x (with x 1,2 and 3), abundantly produced in the plasma. Two principal pathways were shown to occur. A first way leads to hydrocarbon formation such as methane (CH 4 ) and acetylene (C 2 H 2 ), whose partial pressures are close to 2 %. A second way leads to the formation of molecules from the combustion of CH x , such as formaldehyde (CH 2 O), formic acid (CH 2 O 2 ), carbon monoxide (CO), carbon dioxide (CO 2 ) and water. Moreover it is shown that the CO 2 results from a heterogeneous reaction between the carbon on the surfaces and the oxygen coming from the plasma. At low dilution conditions, the partial pressures of CO and CO 2 were estimated at 25 and 10 % of the total pressure respectively. In argon or helium diluted HMDSO plasmas, methane, acetylene and hydrogen are the main stable molecules produced in the gaseous phase. Particle formation in oxygen-diluted HMDSO

Deposition of mullite and mullite-like coatings on silicon carbide by dual-source metal plasma immersion. Topical report, October 1995--September 1996

Energy Technology Data Exchange (ETDEWEB)

Brown, I.G.; Monteiro, O.R. [Lawrence Berkeley National Lab., CA (United States)

1997-04-01

Mullite and mullite-like coatings on silicon carbide have been produced by a Metal Plasma Immersion Ion Implantation and Deposition (Mepiiid) technique based on two cathodic vacuum arc sources and concurrent pulse biasing of the substrate in an oxygen atmosphere. The deposition was carried out at oxygen partial pressures of between 0.66 and 3.33 Pa. The Al:Si ratio in the films varied from 1:1 to 8:1 and was controlled by varying the pulse duration of the separate plasma guns. High bias voltage was used early in the deposition process in order to produce atomic mixing at the film-substrate interface, while lower bias voltage was used later in the deposition; low ion energy allows control of the physical properties of the film as well as faster deposition rates. The as-deposited films were amorphous, and crystalline mullite was formed by subsequent annealing at 1,100 C for 2 hours in air. Strong adhesion between the mullite and the SiC was achieved, in some cases exceeding the 70 MPa instrumental limit of the pull-tester.

Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2005-01-01

Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

Comparison of cryogenic (hydrogen) and TESPEL (polystyrene) pellet particle deposition in a magnetically confined plasma

Science.gov (United States)

McCarthy, K. J.; Tamura, N.; Combs, S. K.; Panadero, N.; Ascabíbar, E.; Estrada, T.; García, R.; Hernández Sánchez, J.; López Fraguas, A.; Navarro, M.; Pastor, I.; Soleto, A.; TJ-II Team

2017-10-01

A cryogenic pellet injector (PI) and tracer encapsulated solid pellet (TESPEL) injector system has been operated in combination on the stellarator TJ-II. This unique arrangement has been created by piggy-backing a TESPEL injector onto the backend of a pipe-gun-type PI. The combined injector provides a powerful new tool for comparing ablation and penetration of polystyrene TESPEL pellets and solid hydrogen pellets, as well as for contrasting subsequent pellet particle deposition and plasma perturbation under analogous plasma conditions. For instance, a significantly larger increase in plasma line-averaged electron density, and electron content, is observed after a TESPEL pellet injection compared with an equivalent cryogenic pellet injection. Moreover, for these injections from the low-magnetic-field side of the plasma cross-section, TESPEL pellets deposit electrons deeper into the plasma core than cryogenic pellets. Finally, the physics behind these observations and possible implications for pellet injection studies are discussed.

Deposition of nanostructured photocatalytic zinc ferrite films using solution precursor plasma spraying

International Nuclear Information System (INIS)

Dom, Rekha; Sivakumar, G.; Hebalkar, Neha Y.; Joshi, Shrikant V.; Borse, Pramod H.

2012-01-01

Highlights: ► Highly economic solution precursor route capable of producing films/coating even for mass scale production. ► Pure spinel phase ZnFe 2 O 4 porous, immobilized films deposited in single step. ► Parameter optimization yields access to nanostructuring in SPPS method. ► The ecofriendly immobilized ferrite films were active under solar radiation. ► Such magnetic system display advantage w.r.t. recyclability after photocatalyst extraction. -- Abstract: Deposition of pure spinel phase, photocatalytic zinc ferrite films on SS-304 substrates by solution precursor plasma spraying (SPPS) has been demonstrated for the first time. Deposition parameters such as precursor solution pH, concentration, film thickness, plasma power and gun-substrate distance were found to control physico-chemical properties of the film, with respect to their crystallinity, phase purity, and morphology. Alkaline precursor conditions (7 2 O 4 film. Very high/low precursor concentrations yielded mixed phase, less adherent, and highly inhomogeneous thin films. Desired spinel phase was achieved in as-deposited condition under appropriately controlled spray conditions and exhibited a band gap of ∼1.9 eV. The highly porous nature of the films favored its photocatalytic performance as indicated by methylene blue de-coloration under solar radiation. These immobilized films display good potential for visible light photocatalytic applications.

Properties of thin films deposited from HMDSO/O2 induced remote plasma: Effect of oxygen fraction

International Nuclear Information System (INIS)

Saloum, S.; Naddaf, M.; Al-Khaled, B.

2008-01-01

Thin films deposited from hexamethyle disiloxane (HMDSO)/O 2 mixture excited in a radio-frequency hollow cathode discharge system have been investigated for their structural, optical and corrosive properties as a function of oxygen fraction χo 2 (χo 2 =0, 0.38, 0.61, 0.76 and 0.90). It is found that the effect of oxygen fraction on films properties is related to O 2 dissociation degree (αd) behavior in pure oxygen plasma. αd has been investigated by actinometry optical emission spectroscopy (AOES) combined with double langmuir probe measurements, a maximum of O 2 dissociation degree of 15% has been obtained for 50 sccm flow rate of O 2 (χo 2 =0.61 in HMDSO/O 2 plasma). Fourier transform infrared spectroscopy (FTIR) and optical measurements showed that the behavior of both identified IR group densities and deposition rate as a function of oxygen fraction is similar to that of O 2 dissociation degree. The inorganic nature of the films depends significantly on oxygen fraction, the best inorganic structure of deposited films has been obtained for 62% HMDSO content in the mixture HMDSO/O 2 (χo 2 =0.38). The refractive index for deposited films from pure HMDSO(χo 2 =0) has been found to be higher than that of films deposited from HMDSO/O 2 mixture. In HMDSO/O 2 plasma, it has a behavior similar to that of deposition rate, and it is comparable to that of quartz. The effect of oxygen fraction on the corrosive properties of thin films deposited on steel has been investigated. It is found that the measured corrosion current density in 0.1 M KCI solution decreases with the addition of O 2 to HMDSO plasma, and it is minimum for χo 2 =0.38. (author)

Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Wight, Daniel Nilsen

2008-07-01

Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

Assessment of power deposition dependence on the antenna poloidal extension in the fast waves-plasma interaction in pre-heated spherical tokamaks

Energy Technology Data Exchange (ETDEWEB)

Komoshvili, K [Tel Aviv University, Ramat Aviv (Israel); Cuperman, S [Tel Aviv University, Ramat Aviv (Israel); Bruma, C [Tel Aviv University, Ramat Aviv (Israel)

2007-09-15

To assess the effect of antenna poloidal extension on fast waves-plasma interactions in pre-heated spherical tokamaks and, as a result, to assist the determination of optimal conditions for power deposition, we carried out a global, numerical investigation. Thus, we solved the steady-state full wave equations for Alfvenic modes in an inhomogeneous, non-uniformly magnetized, resistive, low aspect ratio tokamak plasma with appropriate consideration of boundary conditions; in this, processes such as wave propagation, reflection, transmission, absorption and mode conversion as well as mode-coupling(s) by plasma cross-section non-homogeneity generated waves were included. The results were analysed in terms of the directions of the current densities generated in the presence of up low field side or down high field side magnetic field gradient. Suitable antenna location and poloidal extension for maximum power deposition were determined.

Assessment of power deposition dependence on the antenna poloidal extension in the fast waves-plasma interaction in pre-heated spherical tokamaks

International Nuclear Information System (INIS)

Komoshvili, K; Cuperman, S; Bruma, C

2007-01-01

To assess the effect of antenna poloidal extension on fast waves-plasma interactions in pre-heated spherical tokamaks and, as a result, to assist the determination of optimal conditions for power deposition, we carried out a global, numerical investigation. Thus, we solved the steady-state full wave equations for Alfvenic modes in an inhomogeneous, non-uniformly magnetized, resistive, low aspect ratio tokamak plasma with appropriate consideration of boundary conditions; in this, processes such as wave propagation, reflection, transmission, absorption and mode conversion as well as mode-coupling(s) by plasma cross-section non-homogeneity generated waves were included. The results were analysed in terms of the directions of the current densities generated in the presence of up low field side or down high field side magnetic field gradient. Suitable antenna location and poloidal extension for maximum power deposition were determined

Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

NARCIS (Netherlands)

Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

2014-01-01

Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing

Boron erosion and carbon deposition due to simultaneous bombardment with deuterium and carbon ions in plasmas

International Nuclear Information System (INIS)

Ohya, K.; Kawata, J.; Wienhold, P.; Karduck, P.; Rubel, M.; Seggern, J. von

1999-01-01

Erosion of boron out of a thin film exposed to deuterium edge plasmas and the simultaneous carbon deposition have been investigated in the tokamak TEXTOR-94 and simulated by means of a dynamic Monte Carlo code. The calculated results are compared with some observations (colorimetry, spectroscopy and AES) during and after the exposures. The implantation of carbon impurities strongly changes the effective boron sputtering yield of the film, which results into a lowering of the film erosion and a formation of thick carbon deposits. A strong decrease in the observed BII line emission around a surface location far from the plasma edge can be explained by a carbon deposition on the film. The calculated carbon depth profiles in the film, depending on the distance of the exposed surface from the plasma edge, are in reasonable agreement with measurements by AES after the exposures. Although simultaneous surface erosion and carbon deposition can be simulated, the calculated erosion rate is larger, by a factor of 2, than the observations by colorimetry at the early stage of the exposure

Hot Corrosion of Yttrium Stabilized Zirconia Coatings Deposited by Air Plasma Spray on a Nickel-Based Superalloy

Science.gov (United States)

Vallejo, N. Diaz; Sanchez, O.; Caicedo, J. C.; Aperador, W.; Zambrano, G.

In this research, the electrochemical impedance spectroscopy (EIS) and Tafel analysis were utilized to study the hot corrosion performance at 700∘C of air plasma-sprayed (APS) yttria-stabilized zirconia (YSZ) coatings with a NiCrAlY bond coat grown by high velocity oxygen fuel spraying (HVOF), deposited on an INCONEL 625 substrate, in contact with corrosive solids salts as vanadium pentoxide V2O5 and sodium sulfate Na2SO4. The EIS data were interpreted based on proposed equivalent electrical circuits using a suitable fitting procedure performed with Echem AnalystTM Software. Phase transformations and microstructural development were examined using X-ray diffraction (XRD), with Rietveld refinement for quantitative phase analysis, scanning electron microscopy (SEM) was used to determinate the coating morphology and corrosion products. The XRD analysis indicated that the reaction between sodium vanadate (NaVO3) and yttrium oxide (Y2O3) produces yttrium vanadate (YVO4) and leads to the transformation from tetragonal to monoclinic zirconia phase.

Process development for synthesis and plasma spray deposition of LaPO4 and YPO4 for nuclear applications

International Nuclear Information System (INIS)

Chakravarthy, Y.; Sreekumar, K.P.; Jayakumar, S.; Thiyagarajan, T.K.; Ananthapadmanabhan, P.V.; Das, A.K.; Gantayet, L.M.; Krishnan, K.

2009-01-01

Rare earth phosphates are geologically very stable and considered as potential matrix material for nuclear waste disposal and also for many high temperature thermal barrier and corrosion barrier applications involving molten metals. This paper focuses on developmental studies related to synthesis, thermal stability and plasma spray deposition of LaPO 4 and YPO 4 . The rare earth phosphates were synthesized by chemical method from their respective oxide materials using ortho phosphoric acid. The as-precipitated powders were converted to thermal spray grade powder by compaction, sintering and crushing. Thermal stability of these phosphates up to their melting point was determined by arc plasma melting, followed by X-ray diffraction. Results indicate that LaPO 4 and YPO 4 melt congruently without decomposition. Plasma spray deposition was carried out using the in-house 40 kW atmospheric plasma spray system. Adherent coatings could be deposited on various substrates by optimizing the plasma spray parameters. (author)

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

International Nuclear Information System (INIS)

Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R.

2012-01-01

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 °C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO x , decreased Sb, and increased GaO x content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

Science.gov (United States)

Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

2015-09-09

Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

On the energy deposition into the plasma for an inverted fireball geometry

Science.gov (United States)

Levko, Dmitry; Gruenwald, Johannes

2017-10-01

Energy deposition into a plasma for an inverted fireball geometry is studied using a self-consistent two-dimensional Particle-in-Cell Monte Carlo collision model. In this model, the cathode is a pin which injects the fixed electron current and the anode is a hollow metal tube covered with the metal grid. We obtain an almost constant ratio between the densities of plasmas generated in the cathode-grid gap and inside the hollow anode. The results of the simulations show that there is no energy exchange between the beam and plasma electrons at low emission currents. For increasing current, however, we observe the increasing coupling between the electron beam and the thermal plasma electrons. This leads to the heating of plasma electrons and the generation of the so-called supra-thermal electrons.

On the enhancement of pervaporation properties of plasma-deposited hybrid silica membranes

Energy Technology Data Exchange (ETDEWEB)

Ngamou, P.H.T.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands); Overbeek, J.P.; Kreiter, R.; Van Veen, H.M.; Vente, J.F. [ECN, Energy research Centre of the Netherlands, Petten (Netherlands); Cuperus, P.F. [SolSep BV, Apeldoorn (Netherlands)

2013-06-24

The separation performance of a polymeric-supported hybrid silica membrane in the dehydration process of a butanol-water mixture at 95C has been enhanced by applying a bias to the substrate during the plasma deposition.

Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

International Nuclear Information System (INIS)

Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

2017-01-01

ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O 2 -Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

Energy Technology Data Exchange (ETDEWEB)

Chen, W. Z. [Quanzhou Normal University, Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics & Information Engineering (China); Wang, B. B. [Chongqing University of Technology, College of Chemical Engineering (China); Qu, Y. Z.; Huang, X. [Xiamen University, College of Energy, Xiang’an Campus (China); Ostrikov, K. [Queensland University of Technology, School of Chemistry, Physics and Mechanical Engineering (Australia); Levchenko, I.; Xu, S. [Nanyang Technological University, Plasma Sources and Applications Centre, National Institute of Education (Singapore); Cheng, Q. J., E-mail: qijin.cheng@xmu.edu.cn [Xiamen University, College of Energy, Xiang’an Campus (China)

2017-03-15

ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O{sub 2}-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

Directory of Open Access Journals (Sweden)

Gabriel Onno

2014-02-01

Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

Energy Technology Data Exchange (ETDEWEB)

Yu Shengwang, E-mail: bkdysw@yahoo.cn; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

2011-11-01

SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH{sub 3}){sub 4}) diluted in H{sub 2} as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co{sub 2}Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

International Nuclear Information System (INIS)

Yu Shengwang; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

2011-01-01

SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH 3 ) 4 ) diluted in H 2 as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co 2 Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

Deposition of silica protected luminescent layers of Eu:GdVO{sub 4} nanoparticles assisted by atmospheric pressure plasma jet

Energy Technology Data Exchange (ETDEWEB)

Moretti, Elisa, E-mail: elisa.moretti@unive.it [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Pizzol, Giorgia [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Fantin, Marina; Enrichi, Francesco; Scopece, Paolo [Nanofab-Veneto Nanotech, Via delle Industrie 5, 30175 Marghera, Venezia (Italy); Nuñez, Nuria O.; Ocaña, Manuel [Instituto de Ciencia de Materiales de Sevilla, CSIC-US, Americo Vespucio 49, 41092, Isla de la Cartuja, Sevilla (Spain); Benedetti, Alvise [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Polizzi, Stefano [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, INSTM Venice Research Unit, Via Torino 155/B, 30172 Mestre, Venezia (Italy); Centro di Microscopia Elettronica “Giovanni Stevanato”, Università Ca' Foscari Venezia, Via Torino 155/B, 30172 Mestre, Venezia (Italy)

2016-01-01

Eu:GdVO{sub 4} nanophosphors with an average size of 60 nm, synthesized by a facile solvothermal method, were deposited on monocrystalline silicon wafers by a spray-coating technique with artworks anti-counterfeiting applications in mind. Atmospheric pressure plasma jet (APPJ) was used to deposit a silica-based layer on top of the nanometric luminescent layer, in order to improve its adhesion to the substrate and to protect it from the environment. The nanophosphors were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Coating composition was investigated by Fourier transform infrared spectroscopy (FT-IR) and its morphology was characterized by scanning electron microscopy (FEG-SEM). The film thickness was evaluated by means of ellipsometry and adhesion was estimated by a peeling test. Luminescent properties of the nanophosphors deposited and fixed on silicon wafers were also measured. The whole layer resulted well-adhered to the silicon substrate, transparent and undetectable in the presence of visible light, but easily activated by UV light source. - Highlights: • Luminescent films were obtained by spray deposition of Eu:GdVO{sub 4} nanophosphors. • Plasma jet deposition of SiO{sub 2} fixed the nanophosphors on the substrate. • Optical properties of nanophosphors were preserved after deposition-fixing process. • Films well-adhered to the substrate, even after a scotch tape peeling test and a scratch test.

Deposition of polymer films in low pressure reactive plasmas

Energy Technology Data Exchange (ETDEWEB)

Biederman, H.

1981-12-11

Sputtering and plasma polymerization have found wide application as deposition techniques and have been extensively studied. R.f. sputtering of plastics, in particular of polytetrafluoroethylene, are discussed in the first part of this paper. In the second part, the general concept of plasma polymerization is considered and some examples of applications of plasma-polymerized films are presented. Special attention is paid to fluorocarbon and fluorochlorocarbon films. It has been suggested that these films could be used in thin film capacitors or as passivating layers for integrated circuits. In the optical field some of these films have been used as convenient moisture-resistant, protective and antireflecting coatings. Their mechanical properties have also been examined with the intention of using them for reducing surface friction. More recently some metals have been incorporated into fluorocarbon films to obtain layers with novel properties. Experiments in which films were prepared by the plasma polymerization of certain Freons are described. Some electrical and optical properties of these films are presented. High dielectric losses were obtained in a metal/film/metal sandwich configuration and the possible influence of ambient atmospheric effects on these measurements is discussed.

Synthesis of multicomponent metallic layers during impulse plasma deposition

Directory of Open Access Journals (Sweden)

Nowakowska-Langier Katarzyna

2015-12-01

Full Text Available Pulsed plasma in the impulse plasma deposition (IPD synthesis is generated in a coaxial accelerator by strong periodic electrical pulses, and it is distributed in a form of energetic plasma packets. A nearly complete ionization of gas, in these conditions of plasma generation, favors the nucleation of new phase of ions and synthesis of metastable materials in a form of coatings which are characterized by amorphous and/or nanocrystalline structure. In this work, the Fe–Cu alloy, which is immiscible in the state of equilibrium, was selected as a model system to study the possibility of formation of a non-equilibrium phase during the IPD synthesis. Structural characterization of the layers was done by means of X-ray diffraction and conversion-electron Mössbauer spectroscopy. It was found that supersaturated solid solutions were created as a result of mixing and/or alloying effects between the layer components delivered to the substrate independently and separately in time. Therefore, the solubility in the Fe–Cu system was largely extended in relation to the equilibrium conditions, as described by the equilibrium phase diagram in the solid state.

Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

2008-04-30

Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

Tribological behavior of plasma-polymerized aminopropyltriethoxysilane films deposited on thermoplastic elastomers substrates

Energy Technology Data Exchange (ETDEWEB)

Alba-Elías, Fernando, E-mail: fernando.alba@unirioja.es [Department of Mechanical Engineering, University of La Rioja, c/Luis de Ulloa 20, 26004 Logroño, La Rioja (Spain); Sainz-García, Elisa; González-Marcos, Ana [Department of Mechanical Engineering, University of La Rioja, c/Luis de Ulloa 20, 26004 Logroño, La Rioja (Spain); Ordieres-Meré, Joaquín [ETSII, Polytechnic University of Madrid, c/José Gutiérrez Abascal 2, 28006 Madrid (Spain)

2013-07-01

Thermoplastic elastomers (TPE) are multifunctional polymeric materials that are characterized by moderate cost, excellent mechanical properties (high elasticity, good flexibility, hardness, etc.), high tensile strength, oxidation and wettability. With an objective of reducing the superficial friction coefficient of TPE, this work analyzes the characteristics of coating films that are based on aminopropyltriethoxysilane (APTES) over a TPE substrate. Since this material is heat-sensitive, it is necessary to use a technology that permits the deposition of coatings at low temperatures without affecting the substrate integrity. Thus, an atmospheric-pressure plasma jet system (APPJ) with a dielectric barrier discharge (DBD) was used in this study. The coated samples were analyzed by Scanning Electron Microscopy, Atomic Force Microscopy, Fourier-Transform Infrared with Attenuated Total Reflectance Spectroscopy, X-ray Photoelectron Spectroscopy and tribological tests (friction coefficient and wear rate). The studies showed that the coated samples that contain a higher amount of forms of silicon (SiOSi) and nitrogen (amines, amides and imines) have lower friction coefficients. The sample coated at a specific plasma power of 550 W and an APTES flow rate of 1.5 slm had the highest values of SiOSi and nitrogen-containing groups peak intensity and atomic percentages of Si2p and SiO{sub 4}, and the lowest percentages of C1s and average friction coefficient. The results of this research permit one to conclude that APPJ with a DBD is a promising technique to use in coating SiO{sub x} and nitrogen-containing groups layers on polymeric materials. - Highlights: • SiO{sub x} thin films on thermoplastic elastomers by atmospheric pressure plasma jet. • Study of influence of plasma power and precursor flow rate on film's properties. • Friction coefficient is inversely related to the amount of SiOSi and N groups. • Nitrogen groups from the ionization gas (N{sub 2}) seem to

Deposition of titanium nitride layers by electric arc – Reactive plasma spraying method

International Nuclear Information System (INIS)

Şerban, Viorel-Aurel; Roşu, Radu Alexandru; Bucur, Alexandra Ioana; Pascu, Doru Romulus

2013-01-01

Highlights: ► Titanium nitride layers deposited by electric arc – reactive plasma spraying method. ► Deposition of titanium nitride layers on C45 steel at different spraying distances. ► Characterization of the coatings hardness as function of the spraying distances. ► Determination of the corrosion behavior of titanium nitride layers obtained. - Abstract: Titanium nitride (TiN) is a ceramic material which possesses high mechanical properties, being often used in order to cover cutting tools, thus increasing their lifetime, and also for covering components which are working in corrosive environments. The paper presents the experimental results on deposition of titanium nitride coatings by a new combined method (reactive plasma spraying and electric arc thermal spraying). In this way the advantages of each method in part are combined, obtaining improved quality coatings in the same time achieving high productivity. Commercially pure titanium wire and C45 steel as substrate were used for experiments. X-ray diffraction analysis shows that the deposited coatings are composed of titanium nitride (TiN, Ti 2 N) and small amounts of Ti 3 O. The microstructure of the deposited layers, investigated both by optical and scanning electron microscopy, shows that the coatings are dense, compact, without cracks and with low porosity. Vickers microhardness of the coatings presents maximum values of 912 HV0.1. The corrosion tests in 3%NaCl solution show that the deposited layers have a high corrosion resistance compared to unalloyed steel substrate.

Measurement of thickness of film deposited on the plasma-facing wall in the QUEST tokamak by colorimetry.

Science.gov (United States)

Wang, Z; Hanada, K; Yoshida, N; Shimoji, T; Miyamoto, M; Oya, Y; Zushi, H; Idei, H; Nakamura, K; Fujisawa, A; Nagashima, Y; Hasegawa, M; Kawasaki, S; Higashijima, A; Nakashima, H; Nagata, T; Kawaguchi, A; Fujiwara, T; Araki, K; Mitarai, O; Fukuyama, A; Takase, Y; Matsumoto, K

2017-09-01

After several experimental campaigns in the Kyushu University Experiment with Steady-state Spherical Tokamak (QUEST), the originally stainless steel plasma-facing wall (PFW) becomes completely covered with a deposited film composed of mixture materials, such as iron, chromium, carbon, and tungsten. In this work, an innovative colorimetry-based method was developed to measure the thickness of the deposited film on the actual QUEST wall. Because the optical constants of the deposited film on the PFW were position-dependent and the extinction coefficient k 1 was about 1.0-2.0, which made the probing light not penetrate through some thick deposited films, the colorimetry method developed can only provide a rough value range of thickness of the metal-containing film deposited on the actual PFW in QUEST. However, the use of colorimetry is of great benefit to large-area inspections and to radioactive materials in future fusion devices that will be strictly prohibited from being taken out of the limited area.

Plasma-polymerized perfluoro(methylcyclohexane) coating on ethylene propylene diene elastomer surface: Effect of plasma processing condition on the deposition kinetics, morphology and surface energy of the film

International Nuclear Information System (INIS)

Tran, N.D.; Dutta, N.K.; Choudhury, N. Roy

2005-01-01

Plasma polymerization of perfluoro (methylcyclohexane) was carried out under cold plasma process operated at 13.56 MHz to deposit pore-free, uniform, ultra-thin film on an ethylene propylene diene terpolymer (EPDM) substrate in a view to modify the surface characteristics. The plasma fluoropolymeric films were formed at different plasma treatment times (from 20 s to 16 min), applied powers (20 to 100 W) and precursor flow rates to produce high quality films in a controllable yet tunable fashion. Scanning electron microscopy was employed successfully to characterize the evolution of the morphological feature in the film and also to determine the thickness of the coating. The surface energy of the film was determined by sessile drop method using different solvents as probe liquids. It is observed that a pore-free homogeneous plasma polymer thin film is formed within 20 s of treatment time, however, the morphology of the film depends on the plasma processing conditions, such as plasma power, precursor flow rate and deposition time. With increased time and power at a constant flow rate, the morphology of the film progressively changes from flat smooth to globular and rough. The kinetics and activation energy of the plasma polymer film deposition process were also estimated. The surface energy of the EPDM substrate decreased dramatically with plasma coating, however, it appears to be independent of the treatment time

Investigations on the pyrolysis of hydrocarbons in the inductive coupled RF-plasma and the deposited pyrocarbon

International Nuclear Information System (INIS)

Eisgruber, H.; Mazurkiewicz, M.; Nickel, H.

1979-08-01

The pyrocarbon coatings of the nuclear fuel particles for the High-Temperature Reactor (HTR) are produced by pyrolysis of hydrocarbons under high temperatures. The investigations of the inductive coupled argon or argon/hydrocarbon-plasma performed in the frame of this work deliver a contribution for the clarification of pyrolysis processes and the production of pyrolytic carbons in the plasma of an electric discharge. The argon-plasma, as high-temperature source, is diagnosed theoretically and emission-spectroscopically. To the pure argon-plasma the various hydrocarbons are added. Due to the thermal decomposition the carbon is separated in solid form. The structure of the deposited pyrocarbon is composed of different components. The depositions are characterised with the principles in use at the IRW and are assigned to the fluidized bed pyrocarbons as fas as possible. (orig.) [de

Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

Science.gov (United States)

Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

2015-04-01

Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings.

Bayesian fuzzy logic-based estimation of electron cyclotron heating (ECH) power deposition in MHD control systems

Energy Technology Data Exchange (ETDEWEB)

Davoudi, Mehdi, E-mail: mehdi.davoudi@polimi.it [Department of Electrical and Computer Engineering, Buein Zahra Technical University, Buein Zahra, Qazvin (Iran, Islamic Republic of); Davoudi, Mohsen, E-mail: davoudi@eng.ikiu.ac.ir [Department of Electrical Engineering, Imam Khomeini International University, Qazvin, 34148-96818 (Iran, Islamic Republic of)

2017-06-15

Highlights: • A couple of algorithms to diagnose if Electron Cyclotron Heating (ECH) power is deposited properly on the expected deposition minor radius are proposed. • The algorithms are based on Bayesian theory and Fuzzy logic. • The algorithms are tested on the off-line experimental data acquired from Frascati Tokamak Upgrade (FTU), Frascati, Italy. • Uncertainties and evidences derived from the combination of online information formed by the measured diagnostic data and the prior information are also estimated. - Abstract: In the thermonuclear fusion systems, the new plasma control systems use some measured on-line information acquired from different sensors and prior information obtained by predictive plasma models in order to stabilize magnetic hydro dynamics (MHD) activity in a tokamak. Suppression of plasma instabilities is a key issue to improve the confinement time of controlled thermonuclear fusion with tokamaks. This paper proposes a couple of algorithms based on Bayesian theory and Fuzzy logic to diagnose if Electron Cyclotron Heating (ECH) power is deposited properly on the expected deposition minor radius (r{sub DEP}). Both algorithms also estimate uncertainties and evidences derived from the combination of the online information formed by the measured diagnostic data and the prior information. The algorithms have been employed on a set of off-line ECE channels data which have been acquired from the experimental shot number 21364 at Frascati Tokamak Upgrade (FTU), Frascati, Italy.

Silicon oxide barrier films deposited on PET foils in pulsed plasmas: influence of substrate bias on deposition process and film properties

International Nuclear Information System (INIS)

Steves, S; Bibinov, N; Awakowicz, P; Ozkaya, B; Liu, C-N; Ozcan, O; Grundmeier, G

2013-01-01

A widely used plastic for packaging, polyethylene terephtalate (PET) offers limited barrier properties against gas permeation. For many applications of PET (from food packaging to micro electronics) improved barrier properties are essential. A silicon oxide barrier coating of PET foils is applied by means of a pulsed microwave driven low-pressure plasma. While the adjustment of the microwave power allows for a control of the ion production during the plasma pulse, a substrate bias controls the energy of ions impinging on the substrate. Detailed analysis of deposited films applying oxygen permeation measurements, x-ray photoelectron spectroscopy and atomic force microscopy are correlated with results from plasma diagnostics describing the deposition process. The influence of a change in process parameters such as gas mixture and substrate bias on the gas temperature, electron density, mean electron energy, ion energy and the atomic oxygen density is studied. An additional substrate bias results in an increase in atomic oxygen density up to a factor of 6, although plasma parameter such as electron density of n e = 3.8 ± 0.8 × 10 17 m −3 and electron temperature of k B T e = 1.7 ± 0.1 eV are unmodified. It is shown that atomic oxygen densities measured during deposition process higher than n O = 1.8 × 10 21 m −3 yield in barrier films with a barrier improvement factor up to 150. Good barrier films are highly cross-linked and show a smooth morphology. (paper)

Plasma jet printing of electronic materials on flexible and nonconformal objects.

Science.gov (United States)

Gandhiraman, Ram P; Jayan, Vivek; Han, Jin-Woo; Chen, Bin; Koehne, Jessica E; Meyyappan, M

2014-12-10

We present a novel approach for the room-temperature fabrication of conductive traces and their subsequent site-selective dielectric encapsulation for use in flexible electronics. We have developed an aerosol-assisted atmospheric pressure plasma-based deposition process for efficiently depositing materials on flexible substrates. Silver nanowire conductive traces and silicon dioxide dielectric coatings for encapsulation were deposited using this approach as a demonstration. The paper substrate with silver nanowires exhibited a very low change in resistance upon 50 cycles of systematic deformation, exhibiting high mechanical flexibility. The applicability of this process to print conductive traces on nonconformal 3D objects was also demonstrated through deposition on a 3D-printed thermoplastic object, indicating the potential to combine plasma printing with 3D printing technology. The role of plasma here includes activation of the material present in the aerosol for deposition, increasing the deposition rate, and plasma polymerization in the case of inorganic coatings. The demonstration here establishes a low-cost, high-throughput, and facile process for printing electronic components on nonconventional platforms.

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

NARCIS (Netherlands)

Profijt, H. B.; M. C. M. van de Sanden,; Kessele, W. M. M.

2013-01-01

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been

Temperature effect on hydrocarbon deposition on molybdenum mirrors under ITER-relevant long-term plasma operation

NARCIS (Netherlands)

Rapp, J.; van Rooij, G. J.; Litnovsky, A.; Marot, L.; De Temmerman, G.; Westerhout, J.; Zoethout, E.

2009-01-01

Optical diagnostics in ITER will rely on mirrors near the plasma and the deterioration of the reflectivity is a concern. The effect of temperature on the deposition efficiency of hydrocarbons under long-term operation conditions similar to ITER was investigated in the linear plasma generator

Optical study of plasma sprayed hydroxyapatite coatings deposited at different spray distance

Science.gov (United States)

Belka, R.; Kowalski, S.; Żórawski, W.

2017-08-01

Series of hydroxyapatite (HA) coatings deposited on titanium substrate at different spray (plasma gun to workpiece) distance were investigated. The optical methods as dark field confocal microscopy, Raman/PL and UV-VIS spectroscopy were used for study the influence of deposition process on structural degradation of HA precursor. The hydroxyl group concentration was investigated by study the OH mode intensity in the Raman spectra. Optical absorption coefficients at near UV region were analyzed by Diffuse Reflectance Spectroscopy. PL intensity observed during Raman measurement was also considered as relation to defects concentration and degradation level. It was confirmed the different gunsubstrate distance has a great impact on structure of deposited HA ceramics.

Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Liu Xuanyong; Chu, Paul K.; Ding Chuanxian

2007-01-01

Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans

Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Liu Xuanyong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: xyliu@mail.sic.ac.cn; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Ding Chuanxian [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2007-01-15

Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter <1 0 0> silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans.

Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

KAUST Repository

Zhao, Chao; Hedhili, Mohamed N.; Li, Jingqi; Wang, Qingxiao; Yang, Yang; Chen, Long; LI, LIANG

2013-01-01

The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing

Influence of plasma-induced energy deposition effects, the equation of state, thermal ionization, pulse shaping, and radiation on ion-beam-driven expansions of plane metal targets

International Nuclear Information System (INIS)

Long, K.A.; Tahir, N.A.

1986-01-01

In a previous paper by Long and Tahir [Phys. Fluids 29, 275 (1986)], the motion of plane targets irradiated by ion beams whose energy deposition was assumed to be independent of the ion energy, and the temperature and density of the plasma, was analyzed. In this paper, the analytic solution is extended in order to include the effects of a temperature-and density-dependent energy deposition as a result of electron excitation, an improved equation of state, thermal ionization, a pulse shape, and radiation losses. The change in the energy deposition with temperature and density leads to range shortening and an increased power deposition in the target. It is shown how the analytic theory can be used to analyze experiments to measure the enhanced energy deposition. In order to further analyze experiments, numerical simulations are presented which include the plasma-induced effects on the energy deposition. It is shown that since the change in the range is due to both decrease in density and the increase in temperature, it is not possible to separate these two effects in present experiments. Therefore, the experiments which measure the time-dependent energy of the ions emerging from the back side of a plane target do not as yet measure the energy loss as a function of the density and temperature of the plasma or of the energy of the ion, but only an averaged loss over certain ranges of these physical quantities

Amorphous carbon nitrogenated films prepared by plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Rangel, Elidiane C.; Durrant, Steven F.; Rangel, Rita C.C.; Kayama, Milton E.; Landers, Richard; Cruz, Nilson C. da

2006-01-01

In this work, an investigation was conducted on amorphous hydrogenated-nitrogenated carbon films prepared by plasma immersion ion implantation and deposition. Glow discharge was excited by radiofrequency power (13.56 MHz, 40 W) whereas the substrate-holder was biased with 25 kV negative pulses. The films were deposited from benzene, nitrogen and argon mixtures. The proportion of nitrogen in the chamber feed (R N ) was varied against that of argon, while keeping the total pressure constant (1.3 Pa). From infrared reflectance-absorbance spectroscopy it was observed that the molecular structure of the benzene is not preserved in the film. Nitrogen was incorporated from the plasma while oxygen arose as a contaminant. X-ray photoelectron spectroscopy revealed that N/C and O/C atomic ratios change slightly with R N . Water wettability decreased as the proportion of N in the gas phase increased while surface roughness underwent just small changes. Nanoindentation measurements showed that film deposition by means of ion bombardment was beneficial to the mechanical properties of the film-substrate interface. The intensity of the modifications correlates well with the degree of ion bombardment

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

2010-05-01

Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

Deposition of diamond-like carbon films by plasma source ion implantation with superposed pulse

International Nuclear Information System (INIS)

Baba, K.; Hatada, R.

2003-01-01

Diamond-like carbon (DLC) films were prepared on silicon wafer substrate by plasma source ion implantation with superposed negative pulse. Methane and acetylene gases were used as working gases for plasma. A negative DC voltage and a negative pulse voltage were superposed and applied to the substrate holder. The DC voltage was changed in the range from 0 to -4 kV and the pulse voltage was changed from 0 to -18 kV. The surface of DLC films was very smooth. The deposition rate of DLC films increased with increasing in superposed DC bias voltage. Carbon ion implantation was confirmed for the DLC film deposited from methane plasma with high pulse voltage. I D /I G ratios of Raman spectroscopy were around 1.5 independent on pulse voltage. The maximum hardness of 20.3 GPa was observed for the film prepared with high DC and high pulse voltage

Simultaneous Power Deposition Detection of Two EC Beams with the BIS Analysis in Moving TCV Plasmas

Science.gov (United States)

Curchod, L.; Pochelon, A.; Decker, J.; Felici, F.; Goodman, T. P.; Moret, J.-M.; Paley, J. I.

2009-11-01

Modulation of power amplitude is a widespread to determine the radial absorption profile of externally launched power in fusion plasmas. There are many techniques to analyze the plasma response to such a modulation. The break-in-slope (BIS) analysis can draw an estimated power deposition profile for each power step up. In this paper, the BIS analysis is used to monitor the power deposition location of one or two EC power beams simultaneously in a non-stationary plasma being displaced vertically in the TCV tokamak vessel. Except from radial discrepancies, the results have high time resolution and compare well with simulations from the R2D2-C3PO-LUKE ray-tracing and Fokker-Planck code suite.

Plasma-based EUV light source

Science.gov (United States)

Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

2010-11-02

Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

International Nuclear Information System (INIS)

Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

2008-01-01

In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

International Nuclear Information System (INIS)

Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

2013-01-01

Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

International Nuclear Information System (INIS)

Tian Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

2002-01-01

Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment

In situ plasma diagnostics study of a commercial high-power hollow cathode magnetron deposition tool

International Nuclear Information System (INIS)

Meng Liang; Raju, Ramasamy; Flauta, Randolph; Shin, Hyungjoo; Ruzic, David N.; Hayden, Douglas B.

2010-01-01

Using a newly designed and built plasma diagnostic system, the plasma parameters were investigated on a commercial 200 mm high-power hollow cathode magnetron (HCM) physical vapor deposition tool using Ta target under argon plasma. A three dimensional (3D) scanning radio frequency (rf)-compensated Langmuir probe was constructed to measure the spatial distribution of the electron temperature (T e ) and electron density (n e ) in the substrate region of the HCM tool at various input powers (2-15 kW) and pressures (10-70 mTorr). The T e was in the range of 1-3 eV, scaling with decreasing power and decreasing pressure. Meanwhile, n e was in the range of 4x10 10 -1x10 12 cm -3 scaling with increasing power and decreasing pressure. As metal deposits on the probe during the probe measurements, a self-cleaning plasma cup was designed and installed in the chamber to clean the tungsten probe tip. However, its effectiveness in recovering the measured plasma parameters was hindered by the metal layer deposited on the insulating probe tube which was accounted for the variation in the plasma measurements. Using a quartz crystal microbalance combined with electrostatic filters, the ionization fraction of the metal flux was measured at various input power of 2-16 kW and pressure of 5-40 mTorr. The metal ionization fraction reduced significantly with the increasing input power and decreasing gas pressure which were attributed to the corresponding variation in the ionization cross section and the residence time of the sputtered atoms in the plasma, respectively. Both the metal neutral and ion flux increased at higher power and lower pressure. The 3D measurements further showed that the ionization fraction decreased when moving up from the substrate to the cathode.

Plasma sheath physics and dose uniformity in enhanced glow discharge plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Li Liuhe; Li Jianhui; Kwok, Dixon T. K.; Chu, Paul K.; Wang Zhuo

2009-01-01

Based on the multiple-grid particle-in-cell code, an advanced simulation model is established to study the sheath physics and dose uniformity along the sample stage in order to provide the theoretical basis for further improvement of enhanced glow discharge plasma immersion ion implantation and deposition. At t=7.0 μs, the expansion of the sheath in the horizontal direction is hindered by the dielectric cage. The electron focusing effect is demonstrated by this model. Most of the ions at the inside wall of the cage are implanted into the edge of the sample stage and a relatively uniform ion fluence distribution with a large peak is observed at the end. Compared to the results obtained from the previous model, a higher implant fluence and larger area of uniformity are disclosed.

Studies of internal stress in diamond films prepared by DC plasma chemical vapour deposition

International Nuclear Information System (INIS)

Wang Wanlu; Gao Jinying; Liao Kejun; Liu Anmin

1992-01-01

The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature. Experimental results have shown that total stress in diamond thin films is sensitive to the deposition conditions. The results also indicate that the compressive stress can be explained in terms of amorphous state carbon and hydrogen, and tensile stress is ascribed to the grain boundary relaxation model due to high internal surface area and microstructure with voids

Evolution of α-particle distribution in burning plasmas including energy dependent α-transport effects

International Nuclear Information System (INIS)

Kamelander, G.; Sigmar, D.; Woloch, F.

1991-09-01

This report resumes the essential results of a common OEFZS/MIT (Plasma Fusion Center) project to investigate fusion alpha transport. A computer code has been developed going beyond standard FOKKER-PLANCK-codes assuming that the fusion products give their energy to the plasma on the place of their birth. The present transport code admits the calculation of the α-distribution function. By means of the distribution function the energy deposition rates are calculated. The time-evolution of the α-distribution function has been evaluated for an ignited plasma. A description of the transport code, of the subroutines and of the input data as well as a listing is enclosed to this report. (Authors)

Deposition probe measurements of impurities injected into a tokamak plasma

International Nuclear Information System (INIS)

Hildebrandt, D.; Grote, H.; Herrmann, A.

1985-01-01

Impurity confinement behaviour has been studied by using a deposition probe in conjunction with pellet injection. Generally, an exponential decay of the impurity efflux and nearly symmetric ion/electron side toroidal flows have been observed. During phases of strong plasma disturbances, asymmetric flow is seen, indicative of edge transport and prompt recycling from local sources. The application of ECRH may cause such disturbances. (author)

Calculation of neutral beam deposition accounting for excited states

International Nuclear Information System (INIS)

Gianakon, T.A.

1992-09-01

Large-scale neutral-beam auxillary heating of plasmas has led to new plasma operational regimes which are often dominated by fast ions injected via the absorption of an energetic beam of hydrogen neutrals. An accurate simulation of the slowing down and transport of these fast ions requires an intimate knowledge of the hydrogenic neutral deposition on each flux surface of the plasma. As a refinement to the present generation of transport codes, which base their beam deposition on ground-state reaction rates, a new set of routines, based on the excited states of hydrogen, is presented as mechanism for computing the attenuation and deposition of a beam of energetic neutrals. Additionally, the numerical formulations for the underlying atomic physics for hydrogen impacting on the constiuent plasma species is developed and compiled as a numerical database. Sample results based on this excited state model are compared with the ground-state model for simple plasma configurations

Coaxial carbon plasma gun deposition of amorphous carbon films

Science.gov (United States)

Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

1984-01-01

A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

Coaxial carbon plasma gun deposition of amorphous carbon films

International Nuclear Information System (INIS)

Sater, D.M.; Gulino, D.A.

1984-03-01

A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

Superconducting and structural properties of plasma sprayed YBaCuO layers deposited on metallic substrates

NARCIS (Netherlands)

Hemmes, Herman K.; Jäger, D; Smithers, M.A.; Smithers, M.; van der Veer, J.; van der Veer, J.M.; Stover, D.; Rogalla, Horst

1993-01-01

The properties of plasma sprayed Y-Ba-Cu-O coatings deposited on metallic substrates are studied. Stainless steel, nickel steels and pure nickel are used as substrate. Y-Ba-Cu-O deposited on stainless steel and nickel steel reacts with the substrate. This interaction can be suppressed by using an

Deposition of titanium carbide films from mixed carbon and titanium plasma streams

International Nuclear Information System (INIS)

Delplancke-Ogletree, M.; Monteiro, O.R.

1997-01-01

Dual source metal plasma immersion ion implantation and deposition was used to deposit Ti x C y films over a wide range of Ti:C composition. This technique is well adapted for this purpose and allows one to tailor the microstructure and properties of the films. We investigated the variation of the composition, bonding states, and structure as functions of the deposition conditions. Excess carbon and contamination oxygen are incorporated in the TiC lattice interstitially and substitutionally, respectively. The wear mechanism of a stoichiometric TiC film was investigated and compared to that of a diamondlike carbon film. TiC fails by wear and microcrack propagation. copyright 1997 American Vacuum Society

Modification of low temperature deposited LiMn2O4 thin film cathodes by oxygen plasma irradiation

International Nuclear Information System (INIS)

Chen, Chen Chung; Chiu, Kuo-Feng; Lin, Kun Ming; Lin, Hsin Chih

2009-01-01

Lithium manganese oxides have been deposited by radio frequency magnetron sputter deposition with relatively lower annealing temperatures and then post-treated with a radio frequency (rf) driven oxygen plasma. Following oxygen plasma irradiation, the film properties were modified, and the performance of the thin film cathode has been enhanced. The electrochemical properties of the treated thin-film cathodes were characterized and compared. The results showed that the samples with moderate plasma treatment also maintained good cyclic properties as cycled at a wide range potential window of 2.0 V-4.5 V. Its electrochemical properties were significantly improved by this process, even though the films were prepared under low annealing temperature.

Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

2007-01-01

The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH 3 species, and lower k is shown to correlate with increased concentration of Si-CH 3 . NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH x ) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH x ) content and the presence of C=O and C=C functional groups

Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

International Nuclear Information System (INIS)

Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

2014-01-01

The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

International Nuclear Information System (INIS)

Naddaf, M; Saloum, S; Hamadeh, H

2007-01-01

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Science.gov (United States)

Naddaf, M.; Saloum, S.; Hamadeh, H.

2007-07-01

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 °C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M; Saloum, S; Hamadeh, H [Department of Physics, Atomic Energy Commission of Syria (AECS), PO Box 6091, Damascus (Syrian Arab Republic)

2007-07-07

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

International Nuclear Information System (INIS)

Naddaf, M.; Saloum, S.; Hamadeh, H.

2008-01-01

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups. (Authors)

Voltage uniformity study in large-area reactors for RF plasma deposition

Energy Technology Data Exchange (ETDEWEB)

Sansonnens, L.; Pletzer, A.; Magni, D.; Howling, A.A.; Hollenstein, C. [Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP); Schmitt, J.P.M. [Balzers Process Systems, Palaiseau (France)

1996-09-01

Non-uniform voltage distribution across the electrode area results in inhomogeneous thin-film RF plasma deposition in large area reactors. In this work, a two-dimensional analytic model for the calculation of the voltage distribution across the electrode area is presented. The results of this model are in good agreement with measurements performed without plasma at 13.56 MHz and 70 MHz in a large area reactor. The principal voltage inhomogeneities are caused by logarithmic singularities in the vicinity of RF connections and not by standing waves. These singularities are only described by a two-dimensional model and cannot be intuitively predicted by analogy to a one-dimensional case. Plasma light emission measurements and thickness homogeneity studies of a-Si:H films show that the plasma reproduces these voltage inhomogeneities. Improvement of the voltage uniformity is investigated by changing the number and position of the RF connections. (author) 13 figs., 20 refs.

Plasma interactions determine the composition in pulsed laser deposited thin films

Science.gov (United States)

Chen, Jikun; Döbeli, Max; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas

2014-09-01

Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La0.6Sr0.4MnO3, we demonstrate for as grown La0.6Sr0.4MnO3-δ films that a congruent transfer of metallic species is achieved in two pressure windows: ˜10-3 mbar and ˜2 × 10-1 mbar. In the intermediate pressure range, La0.6Sr0.4MnO3-δ becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

Plasma Deposition and Characterization of Copper-doped Cobalt Oxide Nanocatalysts

Directory of Open Access Journals (Sweden)

Jacek TYCZKOWSKI

2013-09-01

Full Text Available A series of pure and copper-doped cobalt oxide films was prepared by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD. The effect of Cu-doping on the chemical structure and morphology of the deposited films was investigated. Raman and FTIR spectroscopies were used to characterize the chemical structure and morphology of the produced films. The bulk composition and homogeneity of the samples were investigated by energy dispersive X-ray microanalysis (EDX, and X-ray photoelectron spectroscopy (XPS was employed to assess the surface chemical composition of pure and doped materials. The obtained results permit to affirm that the PEMOCVD technique is a simple, versatile and efficient method for providing homogeneous layers of cobalt oxides with a different content of copper. It has been found that pure cobalt oxide films mainly contain Co3O4 in the form of nanoclusters whereas the films doped with Cu are much more complex, and CoOx (also Co3O4, mixed Co-Cu oxides and CuOx nanoclusters are detected in them. Preliminary catalytical tests show that Cu-doped cobalt oxide films allow to initiate catalytic combustion of n-hexane at a lower temperature compared to the pure cobalt oxide (Co3O4 films. From what has been stated above, the plasma-deposited thin films of Cu-doped cobalt oxides pave the way towards a new class of nanomaterials with interesting catalytic properties. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.2320

Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

Directory of Open Access Journals (Sweden)

Shivan R. Singh

2010-05-01

Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

The role of plasma induced substrate heating during high rate deposition of microcrystalline solar cells

NARCIS (Netherlands)

van den Donker, M.N.; Schmitz, R.; Appenzeller, W.; Rech, B.; Kessels, W.M.M.; Sanden, van de M.C.M.

2006-01-01

A 13.56 MHz parallel plate hydrogen-dild. silane plasma, operated at high pressure and high power, was used to deposit microcryst. silicon solar cells with efficiencies of 6-9% at high deposition rates of 0.4-1.2 nm/s. In this regime new challenges arise regarding temp. control, since the high

Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

Science.gov (United States)

Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

2017-03-01

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

Mechanical properties of nanodiamond-reinforced hydroxyapatite composite coatings deposited by suspension plasma spraying

Science.gov (United States)

Chen, Xiuyong; Zhang, Botao; Gong, Yongfeng; Zhou, Ping; Li, Hua

2018-05-01

Hydroxyapatite (HA) coatings suffer from poor mechanical properties, which can be enhanced via incorporation of secondary bioinert reinforcement material. Nanodiamond (ND) possesses excellent mechanical properties to play the role as reinforcement for improving the mechanical properties of brittle HA bioceramic coatings. The major persistent challenge yet is the development of proper deposition techniques for fabricating the ND reinforced HA coatings. In this study, we present a novel deposition approach by plasma spraying the mixtures of ND suspension and micron-sized HA powder feedstock. The effect of ND reinforcement on the microstructure and the mechanical properties of the coatings such as hardness, adhesive strength and friction coefficient were examined. The results showed that the ND-reinforced HA coatings display lower porosity, fewer unmelted particles and uniform microstructure, in turn leading to significantly enhanced mechanical properties. The study presented a promising approach to fabricate ND-reinforced HA composite coatings on metal-based medical implants for potential clinical application.

Theoretical Investigations of Plasma-Based Accelerators and Other Advanced Accelerator Concepts

International Nuclear Information System (INIS)

Shuets, G.

2004-01-01

Theoretical investigations of plasma-based accelerators and other advanced accelerator concepts. The focus of the work was on the development of plasma based and structure based accelerating concepts, including laser-plasma, plasma channel, and microwave driven plasma accelerators

Method for depositing high-quality microcrystalline semiconductor materials

Science.gov (United States)

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Optimizing Thermoelectric Properties of In Situ Plasma-Spray-Synthesized Sub-stoichiometric TiO2-x Deposits

Science.gov (United States)

Lee, Hwasoo; Seshadri, Ramachandran Chidambaram; Pala, Zdenek; Sampath, Sanjay

2018-06-01

In this article, an attempt has been made to relate the thermoelectric properties of thermal spray deposits of sub-stoichiometric titania to process-induced phase and microstructural variances. The TiO2-x deposits were formed through the in situ reaction of the TiO1.9 or TiO1.7 feedstock within the high-temperature plasma flame and manipulated via varying the amounts of hydrogen fed into in the thermal plasma. Changes in the flow rates of H2 in the plasma plume greatly affected the in-flight particle behavior and composition of the deposits. For reference, a high-velocity oxy-fuel spray torch was also used to deposit the two varieties of feedstocks. Refinements to the representation of the in-flight particle characteristics derived via single particle and ensemble diagnostic methods are proposed using the group parameters (melting index and kinetic energy). The results show that depending on the value of the melting index, there is an inverse proportional relationship between electrical conductivity and Seebeck coefficient, whereas thermal conductivity has a directly proportional relationship with the electrical conductivity. Retention of the original phase and reduced decomposition is beneficial to retain the high Seebeck coefficient or the high electrical conductivity in the TiO2 system.

Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

Science.gov (United States)

Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

2011-09-01

Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

Plasma immersion surface modification with metal ion plasma

International Nuclear Information System (INIS)

Brown, I.G.; Yu, K.M.; Godechot, X.

1991-04-01

We describe here a novel technique for surface modification in which metal plasma is employed and by which various blends of plasma deposition and ion implantation can be obtained. The new technique is a variation of the plasma immersion technique described by Conrad and co-workers. When a substrate is immersed in a metal plasma, the plasma that condenses on the substrate remains there as a film, and when the substrate is then implanted, qualitatively different processes can follow, including' conventional' high energy ion implantation, recoil implantation, ion beam mixing, ion beam assisted deposition, and metallic thin film and multilayer fabrication with or without species mixing. Multiple metal plasma guns can be used with different metal ion species, films can be bonded to the substrate through ion beam mixing at the interface, and multilayer structures can be tailored with graded or abrupt interfaces. We have fabricated several different kinds of modified surface layers in this way. 22 refs., 4 figs

Surface preparation of gold nanostructures on glass by ultraviolet ozone and oxygen plasma for thermal atomic layer deposition of Al{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Lancaster, Cady A., E-mail: lancaster@chem.utah.edu; Shumaker-Parry, Jennifer S., E-mail: shumaker-parry@chem.utah.edu

2016-08-01

Thin film deposition to create robust plasmonic nanomaterials is a growing area of research. Plasmonic nanomaterials have tunable optical properties and can be used as substrates for surface-enhanced spectroscopies. Due to the surface sensitivity and the dependence of the near-field behavior on structural details, degradation from cleaning or spectroscopic interrogation causes plasmonic nanostructures to lose distinctive localized surface plasmon resonances or exhibit diminished optical near-field enhancements over time. To decrease degradation, conformal thin films of alumina are deposited on nanostructured substrates using atomic layer deposition. While film growth on homogenous surfaces has been studied extensively, atomic layer deposition-based film growth on heterogeneous nanostructured surfaces is not well characterized. In this report, we have evaluated the impact of oxygen plasma and ultraviolet ozone pre-treatments on Au nanoparticle substrates for thin film growth by monitoring changes in plasmonic response and nanostructure morphology. We have found that ultraviolet ozone is more effective than oxygen plasma for cleaning gold nanostructured surfaces, which is in contrast to bulk films of the same material. Our results show that oxygen plasma treatment negatively impacts the nanostructure and alumina coating based on both scanning electron microscopy analysis of morphology and changes in the plasmonic response. - Highlights: • Plasmonic response indicates oxygen plasma damages Au structures and Al{sub 2}O{sub 3} films. • Ultraviolet ozone (UVO) re-activates aged Al{sub 2}O{sub 3}-coated Au nanostructures. • UVO treatments do not damage Au or Al{sub 2}O{sub 3}-coated nanostructures.

Deposition of a-SiC:H using organosilanes in an argon/hydrogen plasma

International Nuclear Information System (INIS)

Maya, L.

1993-01-01

Selected organosilanes were examined as precursors for the deposition of amorphous hydrogenated silicon carbide in an argon/hydrogen plasma. Effect of process variables on the quality of the films was established by means of FTIR, Auger spectroscopy, XPS, XRD, chemical analysis, and weight losses upon pyrolysis. For a given power level there is a limiting feeding rate of the precursor under which operation of the system is dominated by thermodynamics and leads to high quality silicon carbide films that are nearly stoichiometric and low in hydrogen. Beyond that limit, carbosilane polymer formation and excessive hydrogen incorporation takes place. The hydrogen content of the plasma affects the deposition rate and the hydrogen content of the film. In the thermodynamically dominated regime the nature of the precursor has no effect on the quality of the film, it affects only the relative utilization efficiency

Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

2008-01-01

AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

Plasma-based actuators for turbulent boundary layer control in transonic flow

Science.gov (United States)

Budovsky, A. D.; Polivanov, P. A.; Vishnyakov, O. I.; Sidorenko, A. A.

2017-10-01

The study is devoted to development of methods for active control of flow structure typical for the aircraft wings in transonic flow with turbulent boundary layer. The control strategy accepted in the study was based on using of the effects of plasma discharges interaction with miniature geometrical obstacles of various shapes. The conceptions were studied computationally using 3D RANS, URANS approaches. The results of the computations have shown that energy deposition can significantly change the flow pattern over the obstacles increasing their influence on the flow in boundary layer region. Namely, one of the most interesting and promising data were obtained for actuators basing on combination of vertical wedge with asymmetrical plasma discharge. The wedge considered is aligned with the local streamlines and protruding in the flow by 0.4-0.8 of local boundary layer thickness. The actuator produces negligible distortion of the flow at the absence of energy deposition. Energy deposition along the one side of the wedge results in longitudinal vortex formation in the wake of the actuator providing momentum exchange in the boundary layer. The actuator was manufactured and tested in wind tunnel experiments at Mach number 1.5 using the model of flat plate. The experimental data obtained by PIV proved the availability of the actuator.

Hydrogen plasma enhanced alignment on CNT-STM tips grown by liquid catalyst-assisted microwave plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Tung, Fa-Kuei; Yoshimura, Masamichi; Ueda, Kazuyuki; Ohira, Yutaka; Tanji, Takayoshi

2008-01-01

Carbon nanotubes are grown directly on a scanning tunneling microscopy tip by liquid catalyst-assisted microwave-enhanced chemical vapor deposition, and effects of hydrogen plasma treatment on the tip have been investigated in detail by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Raman spectroscopy. The unaligned CNTs on the as-grown tip apex have been realigned and reshaped by subsequent hydrogen plasma treatment. The diameter of CNTs is enlarged mainly due to amorphous layers being re-sputtered over their outer shells

Effect of Heat Treatment on Microstructure and Mechanical Properties of Inconel 625 Alloy Fabricated by Pulsed Plasma Arc Deposition

Science.gov (United States)

Xu, Fujia; Lv, Yaohui; Liu, Yuxin; Xu, Binshi; He, Peng

Pulsed plasma arc deposition (PPAD) was successfully used to fabricate the Ni-based superalloy Inconel 625 samples. The effects of three heat treatment technologies on microstructure and mechanical properties of the as-deposited material were investigated. It was found that the as-deposited structure exhibited homogenous cellular dendrite structure, which grew epitaxially along the deposition direction. Moreover, some intermetallic phases including Laves phase and MC carbides were precipitated in the interdendritic region as a result of Nb segregation. Compared with the as-deposited microstructure, the direct aged (DA) microstructure changed little except the precipitation of hardening phases γ' and γ" (Ni3Nb), which enhanced the hardness and tensile strength. But the plastic property was inferior due to the existence of brittle Laves phase. After solution and aging heat treatment (STA), a large amount of Laves particles in the interdendritic regions were dissolved, resulting in the reduction of Nb segregation and the precipitation of needle-like δ (Ni3Nb) in the interdendritic regions and grain boundaries. The hardness and tensile strength were improved without sacrificing the ductility. By homogenization and STA heat treatment (HSTA), Laves particles were dissolved into the matrix completely and resulted in recrystallized large grains with bands of annealing twins. The primary MC particles and remaining phase still appeared in the matrix and grain boundaries. Compared with the as-deposited sample, the mechanical properties decreased severely as a result of the grain growth coarsening. The failure modes of all the tensile specimens were analyzed with fractography.

Plasma-deposited aluminum-doped zinc oxide : controlling nucleation, growth and electrical properties

NARCIS (Netherlands)

Ponomarev, M.

2012-01-01

In this work, the Expanding Thermal Plasma (ETP) deposition technique was employed to study the growth development of ZnO:Al thin film as a transparent conductive oxide layer for sustainable applications. Characteristic for ETP-grown ZnO:Al is a gradually reducing resistivity of the growing layer

Deposition of Al N and Ti N thin films on substrates of stainless steel SS304 using plasma focus device

International Nuclear Information System (INIS)

Al-Hawat, Sh.; Soukieh, M.; Abou Kharoub, M.; Al-Sadat, W.

2006-06-01

A 2.8 kJ plasma focus device was used to deposit thin films of aluminium nitride Al N and titanium nitride Ti N on a stainless steel 394 substrate, in order to improve its surface properties. The deposition process was carried out using various number of nitrogen plasma shots at pressures 0.5-0.75 mbar and at different sample's distances from the anode. The plasma diagnostics was achieved using the voltage and current signals recorded by a voltage divider and Rogovskii coil to determine the temperature and plasma density. The surface hardness of SS-304 was increased by about 50% after plasma coating and the thickness of the coated layers was about 1-2μm. This study shows that the hardness is increased with increasing the number of shots and decreased with the distance from the anode. The coated layers were characterized and a qualitative understanding of the deposition process was given. (author)

Calcium titanate (CaTiO{sub 3}) dielectrics prepared by plasma spray and post-deposition thermal treatment

Energy Technology Data Exchange (ETDEWEB)

Ctibor, Pavel [Materials Engineering Department, Institute of Plasma Physics ASCR, v.v.i., Za Slovankou 3, Prague 8 (Czech Republic); Kotlan, Jiri, E-mail: kotlan@ipp.cas.cz [Materials Engineering Department, Institute of Plasma Physics ASCR, v.v.i., Za Slovankou 3, Prague 8 (Czech Republic); Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Prague 6 (Czech Republic); Pala, Zdenek [Materials Engineering Department, Institute of Plasma Physics ASCR, v.v.i., Za Slovankou 3, Prague 8 (Czech Republic); Sedlacek, Josef [Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Prague 6 (Czech Republic); Hajkova, Zuzana; Grygar, Tomas Matys [Institute of Inorganic Chemistry ASCR, v.v.i., Husinec-Rez 1001, Rez (Czech Republic)

2015-12-15

Highlights: • Calcium titanate was sprayed by two different plasma spray systems. • Significant improvement of dielectric properties after annealing was observed. • Calcium titanate self-supporting parts can be fabricated by plasma spraying. - Abstract: This paper studies calcium titanate (CaTiO{sub 3}) dielectrics prepared by plasma spray technology. A water stabilized plasma gun (WSP) as well as a widely used gas stabilized plasma gun (GSP) were employed in this study to deposit three sample sets at different spray conditions. Prepared specimens were annealed in air at atmospheric pressure for 2 h at various temperatures from 530 to 1170 °C. X-ray diffraction (XRD), Raman spectroscopy and porosity measurements were used for sample characterization. Dielectric spectroscopy was applied to obtain relative permittivity, conductivity and loss factor frequency dependence. Band gap energy was estimated from reflectance measurements. The work is focused on the explanation of changes in microstructure and properties of a plasma sprayed deposit after thermal annealing. Obtained results show significant improvement of dielectric properties after thermal annealing.

Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition

International Nuclear Information System (INIS)

Tinck, S; Bogaerts, A

2011-01-01

In this paper, an O 2 inductively coupled plasma used for plasma enhanced atomic layer deposition of Al 2 O 3 thin films is investigated by means of modeling. This work intends to provide more information about basic plasma properties such as species densities and species fluxes to the substrate as a function of power and pressure, which might be hard to measure experimentally. For this purpose, a hybrid model developed by Kushner et al is applied to calculate the plasma characteristics in the reactor volume for different chamber pressures ranging from 1 to 10 mTorr and different coil powers ranging from 50 to 500 W. Density profiles of the various oxygen containing plasma species are reported as well as fluxes to the substrate under various operating conditions. Furthermore, different orientations of the substrate, which can be placed vertically or horizontally in the reactor, are taken into account. In addition, special attention is paid to the recombination process of atomic oxygen on the different reactor walls under the stated operating conditions. From this work it can be concluded that the plasma properties change significantly in different locations of the reactor. The plasma density near the cylindrical coil is high, while it is almost negligible in the neighborhood of the substrate. Ion and excited species fluxes to the substrate are found to be very low and negligible. Finally, the orientation of the substrate has a minor effect on the flux of O 2 , while it has a significant effect on the flux of O. In the horizontal configuration, the flux of atomic oxygen can be up to one order of magnitude lower than in the vertical configuration.

Deposition and characterization of plasma sprayed Ni-5A1/ magnesia stabilized zirconia based functionally graded thermal barrier coating

International Nuclear Information System (INIS)

Baig, M N; Khalid, F A

2014-01-01

Thermal barrier coatings (TBCs) are employed to protect hot section components in industrial and aerospace gas turbine engines. Conventional TBCs frequently fail due to high residual stresses and difference between coefficient of thermal expansion (CTE) of the substrate and coatings. Functionally graded thermal barrier coatings (FG-TBCs) with gradual variation in composition have been proposed to minimize the problem. In this work, a five layered functionally graded thermal barrier coating system was deposited by atmospheric plasma spray (APS) technique on Nimonic 90 substrates using Ni-5Al as bond coat (BC) and magnesia stabilized zirconia as top coat (TC). The coatings were characterized by SEM, EDS, XRD and optical profilometer. Microhardness and coefficient of thermal expansion of the five layers deposited as individual coatings were also measured. The deposited coating system was oxidized at 800°C. SEM analysis showed that five layers were successfully deposited by APS to produce a FG-TBC. The results also showed that roughness (Ra) of the individual layers decreased with an increase in TC content in the coatings. It was found that microhardness and CTE values gradually changed from bond coat to cermet layers to top coat. The oxidized coated sample revealed parabolic behavior and changes in the surface morphology and composition of coating

Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

Energy Technology Data Exchange (ETDEWEB)

Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

1999-09-01

In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

Properties of deposited layer formed by interaction with Be seeded D–He mixture plasma and tungsten

Energy Technology Data Exchange (ETDEWEB)

Tokunaga, K., E-mail: tokunaga@riam.kyushu-u.ac.jp [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Baldwin, M.J.; Nishijima, D.; Doerner, R.P. [Center for Energy Research, University of California at San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417 (United States); Nagata, S. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Tsuchiya, B. [Department of General Education, Faculty of Science and Technology, Meiji University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502 (Japan); Kurishita, H. [International Research Center for Nuclear Materials Science, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Fujiwara, T.; Araki, K.; Miyamoto, Y. [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Ohno, N. [School of Engineering, Nagoya University, Nagoya 464-8603 (Japan); Ueda, Y. [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)

2013-11-15

Be-seeded, high-flux, deuterium/helium mixture plasma exposure experiments on tungsten target materials have been performed to simulate ITER all tungsten divertor erosion/modification and deposition phenomena. The exposure conditions are kept fixed at a typical low-ion-energy of 60 eV and a flux of 3–6 × 10{sup 22}/m{sup 2}/s. Sample temperature is 1123 K and plasma exposure times spanning 1050–10,100 s are explored. The typical ratio of He/D ions is 0.2 and Be content is 0.2%. A He-induced nanostructure layer is formed on the exposure surfaces of tungsten materials and the surface of the nanostructure is covered by a thin layer of Be and O. A fraction of the re-eroded Be from the target is deposited on a glassy carbon plate with line of sight to the tungsten target. Rutherford backscattering spectrometry analyses show that the Be redeposit layer is in the form of laminae. Small amounts of Mo, W and C are also found in the redeposited Be layer. Elastic recoil detection analyses show that D, He and H are also included in the redeposited Be layer.

DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

Directory of Open Access Journals (Sweden)

A. P. Burmakov

2012-01-01

Full Text Available Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition. Unit realizes the plasma parameters control and enhances the possibility of laser-plasma and magnetron methods of coatings deposition.

Negative ion mass spectra and particulate formation in rf silane plasma deposition experiments

International Nuclear Information System (INIS)

Howling, A.A.; Dorier, J.L.; Hollenstein, C.

1992-09-01

Negative ions have been clearly identified in silane rf plasmas used for the deposition of amorphous silicon. Mass spectra were measured for monosilicon up to pentasilicon negative ion radical groups in power-modulated plasmas by means of a mass spectrometer mounted just outside the glow region. Negative ions were only observed over a limited range of power modulation frequency which corresponds to particle-free conditions. The importance of negative ions regarding particulate formation is demonstrated and commented upon. (author) 3 figs., 19 refs

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

2012-01-01

Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

Controlled density of vertically aligned carbon nanotubes in a triode plasma chemical vapor deposition system

International Nuclear Information System (INIS)

Lim, Sung Hoon; Park, Kyu Chang; Moon, Jong Hyun; Yoon, Hyun Sik; Pribat, Didier; Bonnassieux, Yvan; Jang, Jin

2006-01-01

We report on the growth mechanism and density control of vertically aligned carbon nanotubes using a triode plasma enhanced chemical vapor deposition system. The deposition reactor was designed in order to allow the intermediate mesh electrode to be biased independently from the ground and power electrodes. The CNTs grown with a mesh bias of + 300 V show a density of ∼ 1.5 μm -2 and a height of ∼ 5 μm. However, CNTs do not grow when the mesh electrode is biased to - 300 V. The growth of CNTs can be controlled by the mesh electrode bias which in turn controls the plasma density and ion flux on the sample

Very low pressure plasma sprayed yttria-stabilized zirconia coating using a low-energy plasma gun

International Nuclear Information System (INIS)

Zhu, Lin; Zhang, Nannan; Bolot, Rodolphe; Planche, Marie-Pierre; Liao, Hanlin; Coddet, Christian

2011-01-01

In the present study, a more economical low-energy plasma source was used to perform a very low pressure plasma-spray (VLPPS) process. The plasma-jet properties were analyzed by means of optical emission spectroscopy (OES). Moreover, yttria-stabilized zirconia coating (YSZ) was elaborated by a F100 low-power plasma gun under working pressure of 1 mbar, and the substrate specimens were partially shadowed by a baffle-plate during plasma spraying for obtaining different coating microstructures. Based on the SEM observation, a column-like grain coating was deposited by pure vapor deposition at the shadowed region, whereas, in the unshadowed region, the coating exhibited a binary microstructure which was formed by a mixed deposition of melted particles and evaporated particles. The mechanical properties of the coating were also well under investigation. (orig.)

Physics of plasma etching and plasma deposition

NARCIS (Netherlands)

Schram, D.C.; Hoog, de F.J.; Bisschops, T.J.; Kroesen, G.M.W.; Howorka, F.; Lindinger, W.; Maerk, T.D.

1986-01-01

The kinetics and mechanism of the title processes are discussed on the basis of a model in which the plasma-surface system is subdivided into 5 regions: (I) plasma prodn., (II) plasma flow plus radicals, (III) gas adsorbed layer, (IV) modified surface, and (V) undisturbed solid (or liq.) state.

Plasma interactions determine the composition in pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Chen, Jikun; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Döbeli, Max [Laboratory of Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland)

2014-09-15

Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La{sub 0.6}Sr{sub 0.4}MnO{sub 3}, we demonstrate for as grown La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} films that a congruent transfer of metallic species is achieved in two pressure windows: ∼10{sup −3} mbar and ∼2 × 10{sup −1} mbar. In the intermediate pressure range, La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

Development of barrier coatings for cellulosic-based materials by cold plasma methods

Science.gov (United States)

Denes, Agnes Reka

Cellulose-based materials are ideal candidates for future industries that need to be based on environmentally safe technologies and renewable resources. Wood represents an important raw material and its application as construction material is well established. Cellophane is one of the most important cellulosic material and it is widely used as packaging material in the food industry. Outdoor exposure of wood causes a combination of physical and chemical degradation processes due to the combined effects of sunlight, moisture, fungi, and bacteria. Cold-plasma-induced surface modifications are an attractive way for tailoring the characteristics of lignocellulosic substrates to prevent weathering degradation. Plasma-polymerized hexamethyldisiloxane (PPHMDSO) was deposited onto wood surfaces to create water repellent characteristics. The presence of a crosslinked macromolecular structure was detected. The plasma coated samples exhibited very high water contact angle values indicating the existence of hydrophobic surfaces. Reflective and electromagnetic radiation-absorbent substances were incorporated with a high-molecular-weight polydimethylsiloxane polymer in liquid phase and deposited as thin layers on wood surfaces. The macromolecular films, containing the dispersed materials, were then converted into a three dimensional solid state network by exposure to a oxygen-plasma. It was demonstrated that both UV-absorbent and reflectant components incorporated into the plasma-generated PDMSO matrix protected the wood from weathering degradation. Reduced oxidation and less degradation was observed after simulated weathering. High water contact angle values indicated a strong hydrophobic character of the oxygen plasma-treated PDMSO-coated samples. Plasma-enhanced surface modifications and coatings were employed to create water-vapor barrier layers on cellophane substrate surfaces. HMDSO was selected as a plasma gas and oxygen was used to ablate amorphous regions. Oxygen plasma

An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

2005-01-01

The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

Power deposition to the pump limiters in Tore-Supra with ohmic plasmas

International Nuclear Information System (INIS)

Guilhem, D.; Chatelier, M.; Chappuis Fleury, I.; Klepper, C.

1990-01-01

The modification of power scrape-off-length, λq, and power deposition are studied both with the horizontal limiter alone and with the full set of 7 pump limiters for 1MW ohmic plasmas in TORE-SUPRA. By making spatially resolved infrared surface temperature measurements during the plasma discharge, the magnitude and distribution of the energy flux can be derived. For comparison, the surface temperature of the horizontal pump limiter is calculated with a finite element code using a 3D description of the field lines, an exponential scrape-off-layer, and the pump limiter geometry. From comparison of the infrared images of the limiter we derived that the λq for power deposition was slightly less than 9 mm (±1mm) which is in agreement with the predicted design value of 10 mm. For an 8 seconds discharge, the maximum surface temperature on the horizontal limiter is 450 0 C. Inserting the 7 limiters does not modify λq (which becomes 10 mm). The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreased to 320 0 C. These λq values have been independently measured by the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases

Wettability of modified silica layers deposited on glass support activated by plasma

Energy Technology Data Exchange (ETDEWEB)

Terpiłowski, Konrad, E-mail: terpil@umcs.pl [Department of Physical Chemistry – Interfacial Phenomena, Faculty of Chemistry, Maria Curie-Sklodowska University, Lublin (Poland); Rymuszka, Diana [Department of Physical Chemistry – Interfacial Phenomena, Faculty of Chemistry, Maria Curie-Sklodowska University, Lublin (Poland); Goncharuk, Olena V.; Sulym, Iryna Ya.; Gun’ko, Vladimir M. [Chuiko Institute of Surface Chemistry, National Academy of Science of Ukraine, Kiev (Ukraine)

2015-10-30

Highlights: • New modified silica materials synthesis. • Support surface plasma activation. • Apparent surface free energy determination. • Equilibrium contact angle calculation. - Abstract: Fumed silica modified by hexamethyldisilazane [HDMS] and polydimethylsiloxane [PDMS] was dispersed in a polystyrene/chloroform solution. To increase adhesion between deposited silica layers and a glass surface, the latter was pretreated with air plasma for 30 s. The silica/polystyrene dispersion was deposited on the glass support using a spin coater. After deposition, the plates were dried in a desiccator for 24 h. Water advancing and receding contact angles were measured using the tilted plate method. The apparent surface free energy (γ{sub S}) was evaluated using the contact angle hysteresis approach. The surface topography was determined using the optical profilometry method. Contact angles changed from 59.7° ± 4.4 (at surface coverage with trimethylsilyl groups Θ = 0.14) to 155° ± 3.1 at Θ = 1. The value of γ{sub S} decreased from 51.3 ± 2.8 mJ/m{sup 2} (for the sample at the lowest value of Θ) to 1.0 ± 0.4 mJ/m{sup 2} for the most hydrophobic sample. Thus, some systems with a high degree of modification by HDMS showed superhydrophobicity, and the sliding angle amounted to about 16° ± 2.1.

A Tightly Coupled Non-Equilibrium Magneto-Hydrodynamic Model for Inductively Coupled RF Plasmas

Science.gov (United States)

2016-02-29

development a tightly coupled magneto-hydrodynamic model for Inductively Coupled Radio- Frequency (RF) Plasmas. Non Local Thermodynamic Equilibrium (NLTE...for Inductively Coupled Radio-Frequency (RF) Plasmas. Non Local Thermodynamic Equilibrium (NLTE) effects are described based on a hybrid State-to-State...Inductively Coupled Plasma (ICP) torches have wide range of possible applications which include deposition of metal coatings, synthesis of ultra-fine powders

Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

Science.gov (United States)

Tzeng, Yonhua (Inventor)

2009-01-01

Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

Plasma synthesis of hard materials with energetic ions

International Nuclear Information System (INIS)

Monteiro, Othon R.

1999-01-01

Recent developments in plasma synthesis of hard materials using metal plasma immersion ion implantation and deposition are described. We have produced and characterized a variety of films including doped and undoped DLC (diamond-like carbon) and metal carbides. By using multiple plasma sources operated either synchronously or asynchronously, different metal plasma species can be either blended or linked so as to form mixed-composition films or multilayer structures, and by control of the depositing ion energy, interfaces can be made sharp or graded and the film morphology and microstructure can be widely tailored. Plasma compositional uniformity is important to produce homogeneous films, and therefore effective mixing of plasma streams produced by the filtered cathodic vacuum arcs is very important. Specific systems described here include amorphic diamond, and TiC. We outline the deposition technique employed in this investigation, and summarize the results of the characterization of the films

High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

International Nuclear Information System (INIS)

Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

1993-01-01

A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

Effect of argon and hydrogen on deposition of silicon from tetrochlrosilane in cold plasmas

Science.gov (United States)

Manory, R. R.; d.

1985-01-01

The roles of Ar and H2 on the decomposition of SiCl4 in cold plasma were investigated by Langmuir probes and mass spectrometry. Decomposition of the reactant by Ar only has been found to be very slow. In presence of H2 in the plasma SiCl4 is decomposed by fast radical-molecule reactions which are further enhanced by Ar due to additional ion-molecule reactions in which more H radicals are produced. A model for the plasma-surface interactions during deposition of mu-Si in the Ar + H2 + SiCl4 system is presented.

Study of ion implantation in grown layers of multilayer coatings under ion-plasma vacuum deposition

International Nuclear Information System (INIS)

Voevodin, A.A.; Erokhin, A.L.

1993-01-01

The model of ion implantation into growing layers of a multilayer coating produced with vacuum ion-plasma deposition was developed. The model takes into account a possibility for ions to pass through the growing layer and alloys to find the distribution of implanted atoms over the coating thickness. The experimental vitrification of the model was carried out on deposition of Ti and TiN coatings

Deposition of Antimicrobial Copper-Rich Coatings on Polymers by Atmospheric Pressure Jet Plasmas

Directory of Open Access Journals (Sweden)

Jana Kredl

2016-04-01

Full Text Available Inanimate surfaces serve as a permanent reservoir for infectious microorganisms, which is a growing problem in areas in everyday life. Coating of surfaces with inorganic antimicrobials, such as copper, can contribute to reduce the adherence and growth of microorganisms. The use of a DC operated air plasma jet for the deposition of copper thin films on acrylonitrile butadiene styrene (ABS substrates is reported. ABS is a widespread material used in consumer applications, including hospitals. The influence of gas flow rate and input current on thin film characteristics and its bactericidal effect have been studied. Results from X-ray photoelectron spectroscopy (XPS and atomic force microscopy confirmed the presence of thin copper layers on plasma-exposed ABS and the formation of copper particles with a size in the range from 20 to 100 nm, respectively. The bactericidal properties of the copper-coated surfaces were tested against Staphylococcus aureus. A reduction in growth by 93% compared with the attachment of bacteria on untreated samples was observed for coverage of the surface with 7 at. % copper.

Magnetic fields and uniformity of radio frequency power deposition in low-frequency inductively coupled plasmas with crossed internal oscillating currents

DEFF Research Database (Denmark)

Tsakadze, Erekle; Ostrikov, K.N.; Tsakadze, Z.L.

2004-01-01

) discharge modes using two miniature magnetic probes. It is shown that the radial uniformity and depth of the rf power deposition can be improved as compared with conventional sources of inductively coupled plasmas with external flat spiral ("pancake") antennas. Relatively deeper rf power deposition...... in the plasma source results in more uniform profiles of the optical emission intensity, which indicates on the improvement of the plasma uniformity over large chamber volumes. The results of the numerical modeling of the radial magnetic field profiles are found in a reasonable agreement with the experimental...

The application of magnetic self-filter to optimization of AIN film growth process during the impulse plasma deposition synthesis

Directory of Open Access Journals (Sweden)

Chodun Rafal

2016-03-01

Full Text Available This work presents the very first results of the application of plasma magnetic filtering achieved by a coil coupled with an electrical circuit of a coaxial accelerator during the synthesis of A1N thin films by use of Impulse Plasma Deposition method (IPD. The uniqueness of this technical solution lies in the fact that the filter is not supplied, controlled and synchronized from any external device. Our solution uses the energy from the electrical circuit of plasma accelerator. The plasma state was described on the basis of OES studies. Estimation of the effects of plasma filtering on the film quality was carried out on the basis of characterization of structure morphology (SEM, phase and chemical composition (vibrational spectroscopy. Our work has shown that the use of the developed magnetic self-filter improved the structure of the AlN coatings synthesized under the condition of impulse plasma, especially by the minimization of the tendency to deposit metallic aluminum droplets and columnar growth.

Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires

International Nuclear Information System (INIS)

Hou, W C; Hong, Franklin Chau-Nan

2009-01-01

This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and compositions. Under nitrogen-rich growth conditions, the growth rate is strongly dependent on the surface diffusion of gallium, but the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect. Gallium desorbs easily from the surface by reaction with hydrogen. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition, with negligible contribution from surface diffusion. This is the first study reporting the inhibition of surface diffusion effects by hydrogen addition, which can be useful in tailoring the growth and characteristics of nanowires. Without any evidence of direct deposition on the nanowire surface, gallium and nitrogen are shown to dissolve into the catalyst for growing the nanowires at 900 deg. C.

Physical-mechanical properties of Ti-Al-N films, deposited from mixed two-component vacuum arc plasma stream

International Nuclear Information System (INIS)

Aksenov, D.S.; Aksenov, I.I.; Luchaninov, A.A.; Reshetnyak, E.N.; Strel'nitskij, V.E.; Tolmacheva, G.N.; Yurkov, S.A.

2011-01-01

Ti-Al-N films were obtained by vacuum arc system equipped with two-channel T-shaped magnetic filter. The films were deposited by mixing of filtered plasma streams from two sources with cathodes made of aluminium and titanium in nitrogen environment. An influence of aluminium concentration and substrate bias on structure, hardness and elastic modulus of deposited films was studied by X-ray diffraction analysis and nanoindentation techniques. It was found that coatings with aluminium content in range from 13 to 47 at. % are characterized by cubic nitride based on TiN with NaCl structure. An increase of Al content to 71 at. % leads to the formation of hexagonal AlN-based nitride with wurtzite-like structure. Maximum hardness of 35 GPa is observed in films with 47 at. % aluminium concentration and -100 V substrate bias. Elastic modulus falls off along with increase of Al content and negative substrate bias.

Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

Science.gov (United States)

Jia, Endong; Zhou, Chunlan; Wang, Wenjing

2015-01-01

Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

PVD processes of thin films deposition using Hall-current discharge

International Nuclear Information System (INIS)

Svadkovskij, I.V.

2007-01-01

Results of research and developments in the field of PVD processes of thin films deposition using Hall-current discharge have been summarized. Effects of interaction of ions with surface during deposition have been considered. Also features of application and prospects of devices based on ion beam and magnetron sputtering systems in thin films technologies have been analyzed. The aspects in the field plasma physics, technology and equipment plasma PVD processes of thin films deposition have been systematized, on the base of investigations made by author and other scientists. (authors)

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

Spectroscopic ellipsometry characterization of nano-crystalline diamondfilms prepared at various substrate temperatures and pulsed plasma frequencies using microwave plasma enhanced chemical vapor deposition apparatus with linear antenna delivery

Czech Academy of Sciences Publication Activity Database

Mistrík, J.; Janíček, P.; Taylor, Andrew; Fendrych, František; Fekete, Ladislav; Jäger, Aleš; Nesládek, M.

2014-01-01

Roč. 571, č. 1 (2014), s. 230-237 ISSN 0040-6090 R&D Projects: GA ČR GA13-31783S; GA MŠk(CZ) LM2011026 Grant - others: COST Nano TP(XE) MP0901; OP VK(XE) CZ.1.07/2.3.00/20.0306 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * thin films * microwave plasma-enhanced chemical vapor deposition * pulsed plasma * low deposition temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.759, year: 2014

Plasma immersion ion implantation and deposition of DLC coating for modification of orthodontic magnets

International Nuclear Information System (INIS)

Wongsarat, W.; Sarapirom, S.; Aukkaravittayapun, S.; Jotikasthira, D.; Boonyawan, D.; Yu, L.D.

2012-01-01

This study was aimed to use the plasma immersion ion implantation and deposition (PIII-D) technique to form diamond-like carbon (DLC) thin films on orthodontic magnets to solve the corrosion problem. To search for the optimal material modification effect, PIII-D conditions including gases, processing time, and pulsing mode were varied. The formation of DLC films was confirmed and characterized with Raman spectra. The intensity of the remnant magnetic field of the magnets and the hardness, adhesion and thickness of the thin films were then measured. A corrosion test was carried out using clinic dental fluid. Improved benefits including a satisfying hardness, adhesion, remnant magnetic strength and corrosion resistance of the DLC coating could be achieved by using a higher interrupting time ratio and shorter processing time.

Plasma immersion ion implantation and deposition of DLC coating for modification of orthodontic magnets

Energy Technology Data Exchange (ETDEWEB)

Wongsarat, W. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani, Bangkok 12120 (Thailand); Aukkaravittayapun, S. [National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani, Bangkok 12120 (Thailand); Jotikasthira, D. [Department of Odontology-Oral Pathology, Faculty of Dentistry, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2012-02-01

This study was aimed to use the plasma immersion ion implantation and deposition (PIII-D) technique to form diamond-like carbon (DLC) thin films on orthodontic magnets to solve the corrosion problem. To search for the optimal material modification effect, PIII-D conditions including gases, processing time, and pulsing mode were varied. The formation of DLC films was confirmed and characterized with Raman spectra. The intensity of the remnant magnetic field of the magnets and the hardness, adhesion and thickness of the thin films were then measured. A corrosion test was carried out using clinic dental fluid. Improved benefits including a satisfying hardness, adhesion, remnant magnetic strength and corrosion resistance of the DLC coating could be achieved by using a higher interrupting time ratio and shorter processing time.

Plasma Deposited Thin Iron Oxide Films as Electrocatalyst for Oxygen Reduction Reaction in Proton Exchange Membrane Fuel Cells

Directory of Open Access Journals (Sweden)

Lukasz JOZWIAK

2017-02-01

Full Text Available The possibility of using plasma deposited thin films of iron oxides as electrocatalyst for oxygen reduction reaction (ORR in proton exchange membrane fuel cells (PEMFC was examined. Results of energy-dispersive X-ray spectroscopy (EDX and X-ray photoelectron spectroscopy (XPS analysis indicated that the plasma deposit consisted mainly of FeOX structures with the X parameter close to 1.5. For as deposited material iron atoms are almost exclusively in the Fe3+ oxidation state without annealing in oxygen containing atmosphere. However, the annealing procedure can be used to remove the remains of carbon deposit from surface. The single cell test (SCT was performed to determine the suitability of the produced material for ORR. Preliminary results showed that power density of 0.23 mW/cm2 could be reached in the tested cell.DOI: http://dx.doi.org/10.5755/j01.ms.23.1.14406

Scratch induced failure of plasma sprayed alumina based coatings

International Nuclear Information System (INIS)

Hazra, S; Bandyopadhyay, P.P.

2012-01-01