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Sample records for inas-channel hemt kim

  1. Results from KIMS

    International Nuclear Information System (INIS)

    Myung, S. S.; Bhang, H. C.; Choi, J. H.; Kim, D. W.; Kim, S. C.; Kim, S. K.; Kwak, J. W.; Lee, J.; Lee, J. H.; Lee, M. J.; Lee, S. J.; Ryu, S.; Kang, W. G.; Kim, Y. D.; Lee, J. I.; Jung, S. W.; Kim, H. J.; So, J. H.; Hahn, I. S.; Hwang, M. J.

    2008-01-01

    KIMS is a dark matter search experiment using low background CsI(TB) crystals at Yangyang Underground Laboratory in Korea. With a total exposure of 3409 kg·d data, we set a new limit on WIMP-nucleon cross section. We achieved the most stringent limit on the spin-dependent interaction for a pure proton case. We were able to exclude the DAMA signal region for both spin-dependent and spin-independent interaction for the WIMP mass greater than 20 GeV/c 2 . KIMS experiment is upgraded with 12 CsI(TB) crystals corresponding to a total mass of 104 kg and accumulating data since Jan. 2008.

  2. The ten thousand Kims

    Science.gov (United States)

    Baek, Seung Ki; Minnhagen, Petter; Kim, Beom Jun

    2011-07-01

    In Korean culture, the names of family members are recorded in special family books. This makes it possible to follow the distribution of Korean family names far back in history. It is shown here that these name distributions are well described by a simple null model, the random group formation (RGF) model. This model makes it possible to predict how the name distributions change and these predictions are shown to be borne out. In particular, the RGF model predicts that for married women entering a collection of family books in a certain year, the occurrence of the most common family name 'Kim' should be directly proportional to the total number of married women with the same proportionality constant for all the years. This prediction is also borne out to a high degree. We speculate that it reflects some inherent social stability in the Korean culture. In addition, we obtain an estimate of the total population of the Korean culture down to the year 500 AD, based on the RGF model, and find about ten thousand Kims.

  3. The ten thousand Kims

    International Nuclear Information System (INIS)

    Baek, Seung Ki; Minnhagen, Petter; Kim, Beom Jun

    2011-01-01

    In Korean culture, the names of family members are recorded in special family books. This makes it possible to follow the distribution of Korean family names far back in history. It is shown here that these name distributions are well described by a simple null model, the random group formation (RGF) model. This model makes it possible to predict how the name distributions change and these predictions are shown to be borne out. In particular, the RGF model predicts that for married women entering a collection of family books in a certain year, the occurrence of the most common family name 'Kim' should be directly proportional to the total number of married women with the same proportionality constant for all the years. This prediction is also borne out to a high degree. We speculate that it reflects some inherent social stability in the Korean culture. In addition, we obtain an estimate of the total population of the Korean culture down to the year 500 AD, based on the RGF model, and find about ten thousand Kims.

  4. Monte Carlo lattice program KIM

    International Nuclear Information System (INIS)

    Cupini, E.; De Matteis, A.; Simonini, R.

    1980-01-01

    The Monte Carlo program KIM solves the steady-state linear neutron transport equation for a fixed-source problem or, by successive fixed-source runs, for the eigenvalue problem, in a two-dimensional thermal reactor lattice. Fluxes and reaction rates are the main quantities computed by the program, from which power distribution and few-group averaged cross sections are derived. The simulation ranges from 10 MeV to zero and includes anisotropic and inelastic scattering in the fast energy region, the epithermal Doppler broadening of the resonances of some nuclides, and the thermalization phenomenon by taking into account the thermal velocity distribution of some molecules. Besides the well known combinatorial geometry, the program allows complex configurations to be represented by a discrete set of points, an approach greatly improving calculation speed

  5. Nonlinear characterization of GaN HEMT

    International Nuclear Information System (INIS)

    Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng

    2010-01-01

    DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

  6. Kim Dotcomi kättemaks / Andy Greenberg

    Index Scriptorium Estoniae

    Greenberg, Andy

    2013-01-01

    Skandaalne Internetimagnaat Kim Schmitz, rohkem tuntud kui Kim Dotcom, on veendunud, et tema loodud failivahetusprogrammi Megauploadi mahavõtmisega ja autoriõiguste rikkumise süüdistusega tehti talle liiga ning ta on asunud raevukalt vastulöögile USA valitsuse vastu

  7. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

    Energy Technology Data Exchange (ETDEWEB)

    Du Rui; Dai Yang; Chen Yanling; Yang Fuhua, E-mail: ddrr@semi.ac.c [Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2009-03-15

    A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

  8. Indium antimonide based HEMT for RF applications

    International Nuclear Information System (INIS)

    Subash, T. D.; Gnanasekaran, T.

    2014-01-01

    We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system. (semiconductor materials)

  9. Projecting Pyongyang: The Future of North Korea's Kim Jong IL Regime

    National Research Council Canada - National Science Library

    Scobell, Andrew

    2008-01-01

    .... In this monograph, the focus is on the fate of the regime dominated by the Kim Dynasty, initially ruled by Kim Il Sung and then led by his son, Kim Jong Il, following the former's death in 1994...

  10. An improved large signal model of InP HEMTs

    Science.gov (United States)

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  11. AlGaN/GaN double-channel HEMT

    International Nuclear Information System (INIS)

    Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

    2010-01-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

  12. Coenite seiklused ja Kim Ki-duki huumor / Merit Kask

    Index Scriptorium Estoniae

    Kask, Merit

    2007-01-01

    60-nda Cannes'i filmifestivali filme : Ethan ja Joel Coen'i "Pole maad vanadele meestele" ("No Country for Old Men" ; Ameerika Ühendriigid), Kim Ki-duki "Hingetõmme" ("Soom"/"Breath" ; Lõuna-Korea) ja Raphael Nadjari "Tehilim" (Prantsusmaa - Iisrael - Ameerika Ühendriigid)

  13. Prikljutshenija Koenov i jumor Kim Ki-duka / Merit Kask

    Index Scriptorium Estoniae

    Kask, Merit

    2007-01-01

    60-nda Cannes'i filmifestivali filme : Ethan ja Joel Coen'i "Pole maad vanadele meestele" ("No Country for Old Men" ; Ameerika Ühendriigid), Kim Ki-duki "Hingetõmme" ("Soom"/"Breath" ; Lõuna-Korea) ja Raphael Nadjari "Tehilim" (Prantsusmaa - Iisrael - Ameerika Ühendriigid)

  14. An accurate and simple large signal model of HEMT

    DEFF Research Database (Denmark)

    Liu, Qing

    1989-01-01

    A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid...

  15. The New North Korean Problem: History and Responsibilities in the Age of Kim Jong Un

    Science.gov (United States)

    2012-03-29

    Kim Jong Un is the youngest of Kim Jong Il’s three male children. The oldest, Kim Jong Nam was once favored to...passport.49 In a series of interviews with Japanese reporter Yogi Gomi, Kim Jong Nam related his concerns about the future of North Korea and the...4. TITLE AND SUBTITLE THE NEW NORTH KOREAN PROBLEM: HISTORY AND RESPONSIBILITIES IN THE AGE OF KIM JONG UN 5. FUNDING NUMBERS

  16. Global Policing and the Case of Kim Dotcom

    OpenAIRE

    Darren Palmer; Ian J Warren

    2013-01-01

    In early 2012, 76 heavily armed police conducted a raid on a house in Auckland, New Zealand. The targets were Kim Dotcom, a German national with a NZ residency visa, and several colleagues affiliated with Megaupload, an online subscription-based peer-to-peer (P2P) file sharing facility. The alleged offences involved facilitating unlawful file sharing and United States federal criminal copyright violations. Following the raid, several court cases provide valuable insights into emerging ‘global...

  17. Chang Sei Kim's Activities on Public Health in Colonial Korea

    Directory of Open Access Journals (Sweden)

    Park Yunjae

    2006-12-01

    Full Text Available After graduating from Severance Medical College in 1916, Chang Sei Kim went to Shanghai to work as a missionary in a adventist hospital. The establishment of the Korean Provisional Government led him to participate in the independence movement. Educating nurses to assist the forthcoming war for independence, he seemed to realize the fact that the health of Koreans would be a key factor for achieving independence. He left for the U.S. to conduct comprehensive research on medicine. Chang Sei Kim was the first Korean to receive a Ph. D. degree of Public Health, graduating from the Johns Hopkins School of Hygiene and Public Health in 1925. He then gained an opportunity to work for Korea as a professor at Severance Medical College. His objective was the 'Reconstruction of the Korean People In Terms of Physical Constitution.' He pointed out that Koreans' weak state of health was a major reason for Korea's colonization. To gain independence, he emphasized that the Korean people should receive education on public health in order to improve the primitive conditions of sanitation. There is little doubt that Chang Sei Kim's ideas developed Heungsadan's views on medicine in terms of its stress on cultivation of ability, especially considering the fact that he was a member of the organization. As a member of the colonized who could not participate in the developing official policy, Chang Sei Kim was not able to implement his ideas fully, because an individual or a private organization could not carry out policy on public health as large a scale as the government did. Never giving up his hopes for Korean independence, he rejected requests to assume official posts in the Government-General. That was why he was particularly interested in the Self-Governing Movement in 1920s Korea. If the movement had attained its goal, he might have worked for the enhancement of sanitary environment as a director of Sanitary Department. His application for funding to establish

  18. Anmeldelse af Kim Wind Andersen: Overblik over selskabers underskudsfremførsel

    DEFF Research Database (Denmark)

    Werlauff, Erik

    2011-01-01

    Artiklen anmelder Kim Wind Andersen: Overblik over selskabers underskudsfremførsel (Thomson Reuters Professional, 2010)......Artiklen anmelder Kim Wind Andersen: Overblik over selskabers underskudsfremførsel (Thomson Reuters Professional, 2010)...

  19. Kim C. Sturgess. Shakespeare and the American Nation.

    Directory of Open Access Journals (Sweden)

    Jean‑Louis Claret

    2006-04-01

    Full Text Available The front page of Kim C Sturgess’s recent book entitled Shakespeare and the American Nation is particularly mind‑teasing insofar as it represents the famous Droeshout engraving of the bard (it illustrated the front‑page of the 1623 edition of Shakespeare’s works standing out against a background that superimposes the head of the Statue of Liberty on the spangled banner. The starting point of Sturgess’s 234‑page demonstration endorsed by Cambridge University Press is a paradox that the Britis...

  20. Kim C. Sturgess. Shakespeare and the American Nation.

    OpenAIRE

    Claret, Jean‑Louis

    2006-01-01

    The front page of Kim C Sturgess’s recent book entitled Shakespeare and the American Nation is particularly mind‑teasing insofar as it represents the famous Droeshout engraving of the bard (it illustrated the front‑page of the 1623 edition of Shakespeare’s works) standing out against a background that superimposes the head of the Statue of Liberty on the spangled banner. The starting point of Sturgess’s 234‑page demonstration endorsed by Cambridge University Press is a paradox that the Britis...

  1. Unstable behaviour of normally-off GaN E-HEMT under short-circuit

    Science.gov (United States)

    Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

    2018-04-01

    The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

  2. Sexualidad violenta en el cine de Kim Ki-duk

    Directory of Open Access Journals (Sweden)

    Daniel Muñoz Ruiz

    2011-07-01

    Full Text Available En sus más de 110 años de vida el cine ha representado la sexualidad humana en todas sus modalidades y desde los más variados puntos de vista. El cine de Kim Ki-duk ha sorprendido y escandalizado al público por su crudeza y, a veces, excesiva violencia. El director surcoreano ha explorado a lo largo de su filmografía el tema del sexo siempre desde puntos de vista dramáticos y hasta truculentos. En sus películas la mayoría de las relaciones sexuales carecen de amor y afecto. Nunca son placenteras. La violación, la prostitución, la violencia de género y las frustraciones sexuales son temas recurrentes en su cine.

  3. Materialismo percettivo. Da Democrito a Lenin, da Hobbes a Kim

    Directory of Open Access Journals (Sweden)

    Michele Gardini

    2012-05-01

    Full Text Available The paper tries to outline something like a short “critique of pure materialism” in the domain of perception, a sketch showing – through a series of examples, picked out in an apparently heterogeneous fashion from the Western philosophical tradition – how this epistemological model each time, and in everyone of its forms, fails in giving account of the basic features of perceiving.  After giving a survey of authors like Democritus, Hobbes, De Sade, Lenin, the final appendix, devoted to the concept of “supervenience” and its treatment in Davidson and Kim, aims at summarizing the whole problem through the categories of the contemporary philosophy of mind. The conclusion is that a pure materialistic approach is incapable to give reason to some of the fundamental characteristics of perception, that make it one of the basic moods of “being-in-the-world”.

  4. Global Policing and the Case of Kim Dotcom

    Directory of Open Access Journals (Sweden)

    Darren Palmer

    2013-11-01

    Full Text Available In early 2012, 76 heavily armed police conducted a raid on a house in Auckland, New Zealand. The targets were Kim Dotcom, a German national with a NZ residency visa, and several colleagues affiliated with Megaupload, an online subscription-based peer-to-peer (P2P file sharing facility. The alleged offences involved facilitating unlawful file sharing and United States federal criminal copyright violations. Following the raid, several court cases provide valuable insights into emerging ‘global policing’ practices (Bowling and Sheptycki 2012 based on communications between sovereign enforcement agencies.  This article uses these cases to explore the growth of ‘extraterritorial’ police powers that operate ‘across borders’ (Nadelmann 1993 as part of several broader transformations of global policing in the digital age.

  5. Effects of structural modification on reliability of nanoscale nitride HEMTs

    Science.gov (United States)

    Gaddipati, Vamsi Mohan

    AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

  6. ECV profiling of GaAs and GaN HEMT heterostructures

    Science.gov (United States)

    Yakovlev, G.; Zubkov, V.

    2018-03-01

    AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

  7. Magnetic flux creep in HTSC and Anderson-Kim theory

    International Nuclear Information System (INIS)

    Lykov, A.N.

    2014-01-01

    The theoretical and experimental data on flux creep in high-temperature superconductors (HTSC) were analyzed in the review paper. On the one hand, the main attention is paid to the most striking experimental results which have had a significant influence on the investigations of flux creep in HTSC. On the other hand, the analysis of theoretical studies is concentrated on the works, which explain the features of flux creep on the basis of the Anderson-Kim (AK) theory modifications, and received previously unsufficient attention. However, it turned out that the modified AK theory could explain a lot of features of flux creep in HTSC: the scaling behaviour of current-voltage curves of HTSC, the finite rate of flux creep at ultra low temperatures, the logarithmic dependence of effective pinning potential as a function of transport current and its decrease with temperature. The harmonic potential field which is used in this approach makes it possible to solve accurately the both problems: viscous vortex motion and flux creep in this field. Moreover the distribution of pinning potential and the interaction of vortices with each other are taken into account in the approach. Thus, the modification of the AK theory consists, essentially, in its detailed elaboration and approaching to real situations in superconductors

  8. A STUDY OF MICROBES IN FRUIT JUICES, KIMS-AMALAPURAM

    Directory of Open Access Journals (Sweden)

    Nagaraja

    2015-12-01

    Full Text Available INTRODUCTION Fruit and sugarcane juices are nutritious drinks with great taste and health benefits. Food borne illnesses associated with consumption of Fruit and sugarcane juices at several places in India and elsewhere. Fruit juices were served with added ice pieces. Hygienic standards are not maintained while transporting from the field to the place of extraction and preparation. Hence a rapid review of the fruit juices from street vendors has been undertaken along with sugarcane juice. Raw sugarcane juice is a refreshing juice in many parts of Andhra Pradesh. The present study is to assess the prevalence of different organisms from different fruit juices collected from street vendors. METHODS Fruit juices are collected namely sugarcane, sweet lemon, orange, grape apple, pineapple pomegranate. A total 100 samples of fruit juices were collected from road side from different vendors. 150 ml of each variety of fruit juices were collected from different vendors in screw capped bottles and subjected to microbial analysis, processed with in 30mts in the department of microbiology at KIMS by standard methods. RESULTS The analysed samples of fruit juices are found to be contaminated with different bacteria, Escherichia coli 30% Klebsiella pneumoniae 10% Staphylococcus aureus 20% Enterococcus faecalis 04% Pseudomonas aeruginosa 10% ASB 04% (aerobic spore bearers Micrococci 02% Proteus 20% Salmonella. Shigella and Vibrios were not isolated. CONCLUSION It is high time that street vendors should have health education by volunteers, health workers from PHC (primary health centers and people well versed with community medicine practice for implementation of standard hygienic protocols may reduce contamination of fruit and sugarcane juices The concerned health authorities need to ensure and insist to follow the protocols by the vendors and license holders to the vendors.

  9. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

    2018-01-01

    . The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common-mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L......In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices...... are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four-layer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained...

  10. Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

    Directory of Open Access Journals (Sweden)

    H. MOSBAHI

    2014-05-01

    Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

  11. Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils.

    Science.gov (United States)

    Lu, Jonathan Y; Grafendorfer, Thomas; Zhang, Tao; Vasanawala, Shreyas; Robb, Fraser; Pauly, John M; Scott, Greig C

    2016-12-01

    Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered.

  12. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Das, Palash; Biswas, Dhrubes

    2014-01-01

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT

  13. 5 Watt GaN HEMT Power Amplifier for LTE

    Directory of Open Access Journals (Sweden)

    K. Niotaki

    2014-04-01

    Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

  14. Electron beam irradiation effect on GaN HEMT

    International Nuclear Information System (INIS)

    Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

    2011-01-01

    In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

  15. REPRESENTATION OF KIM JONG-UN’S SUCCESSION IN BBC NEWS: A CRITICAL DISCOURSE ANALYSIS

    Directory of Open Access Journals (Sweden)

    Hendra Nugraha

    2016-04-01

    Full Text Available This research attempts to reveal representation of Kim Jong-Un’s succession in BBC News through textual and discursive practice analysis. The data of this thesis are taken from BBC News website on 29 and 31 December 2011. The theory applied to seek the objective of the research is Critical Discourse Analysis developed by Fairclough. Through textual and discursive practice analysis, the writer finds pthat BBC employs more passive material clauses than active material clauses in depicting Kim Jong-Un’s succession. BBC also represents Kim Jong-Un’s succession as premature process where Kim Jong-Un is portrayed as a young and inexperienced leader. Besides the prematurity of the succession, the present writer finds that BBC represents Kim Jong-Un’s succession as continuity of Kim’s family dynasty. Thus, the succession is based on his resemblance to Kim Il-Sung, the founder of Democratic People’s Republic of Korea, rather than Kim Jong-Un ability and competency.

  16. Emerging GaN-based HEMTs for mechanical sensing within harsh environments

    Science.gov (United States)

    Köck, Helmut; Chapin, Caitlin A.; Ostermaier, Clemens; Häberlen, Oliver; Senesky, Debbie G.

    2014-06-01

    Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

  17. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    Science.gov (United States)

    Wei, Mao; Wei-Bo, She; Cui, Yang; Jin-Feng, Zhang; Xue-Feng, Zheng; Chong, Wang; Yue, Hao

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085, 61334002, 61306017, 61474091, 61574112, and 61574110).

  18. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    International Nuclear Information System (INIS)

    Mao Wei; She Wei-Bo; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Hao Yue; Yang Cui

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. (paper)

  19. 11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

    NARCIS (Netherlands)

    Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

    2008-01-01

    We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (Wg) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an

  20. Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

    Science.gov (United States)

    Orouji, Ali A.; Ghaffari, Majid

    2015-11-01

    In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

  1. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    International Nuclear Information System (INIS)

    Witte, H; Warnke, C; Krost, A; Voigt, T; De Lima, A; Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K

    2011-01-01

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO x isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  2. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    Energy Technology Data Exchange (ETDEWEB)

    Witte, H; Warnke, C; Krost, A [Institute of Experimental Physics, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Voigt, T; De Lima, A [Institute for Physiology, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K, E-mail: hartmut.witte@physik.uni-magdeburg.de [Process Systems Engineering, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany)

    2011-09-07

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO{sub x} isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  3. Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence

    Science.gov (United States)

    Isobe, Yasuhiro; Hung, Hung; Oasa, Kohei; Ono, Tasuku; Onizawa, Takashi; Yoshioka, Akira; Takada, Yoshiharu; Saito, Yasunobu; Sugiyama, Naoharu; Tsuda, Kunio; Sugiyama, Toru; Mizushima, Ichiro

    2017-06-01

    Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL/BE ratio by conventional photoluminescence because HEMT devices consist of multiple GaN layers and the YL signal is detected from the carbon-doped GaN layer. Thus, the X-CL analysis method is a useful technique for device design in order to suppress current collapse.

  4. An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Cao Meng-Yi; Lu Yang; Chen Yong-He; Zheng Jia-Xin; Ma Xiao-Hua; Hao Yue; Wei Jia-Xing; Li Wei-Jun

    2014-01-01

    In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I–V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10 × 125 μm)). The improved large signal model simulates the I–V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Algan/Gan Hemt By Magnetron Sputtering System

    Science.gov (United States)

    Garcia Perez, Roman

    In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

  6. A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

    Science.gov (United States)

    Wilkinson, David T.; Page, Lyman

    1995-01-01

    The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

  7. 60Co gamma radiation effect on AlGaN//AlN/GaN HEMT devices

    International Nuclear Information System (INIS)

    Wang Yanping; Luo Yinhong; Wang Wei; Zhang Keying; Guo Hongxia; Guo Xiaoqiang; Wang Yuanming

    2013-01-01

    The testing techniques and experimental methods of the 60 Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained. (authors)

  8. The sensitivity research of multiparameter biosensors based on HEMT by the mathematic modeling method

    Science.gov (United States)

    Tikhomirov, V. G.; Gudkov, A. G.; Agasieva, S. V.; Gorlacheva, E. N.; Shashurin, V. D.; Zybin, A. A.; Evseenkov, A. S.; Parnes, Y. M.

    2017-11-01

    The numerical impact modeling of some external effects on the CVC of biosensors based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure surface in the gate region and to start the process of directed construction optimization of the biosensors based on AlGaN/GaN HEMT with the aim of improving their performance. The calculation of the drain current of the biosensor construction was carried out to confirm the reliability of the developed mathematical model and obtained results.

  9. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  10. [KIM-1 and NGAL as potential biomarkers for the diagnosis and cancer progression].

    Science.gov (United States)

    Marchewka, Zofia; Tacik, Aneta; Piwowar, Agnieszka

    2016-04-18

    On the basis of scientific literature, there is growing evidence that KIM-1 and NGAL are interesting and promising biomarkers not only in acute and chronic inflammatory processes but also in oncogenesis. There are a number of studies which investigate their possible use in diagnosis, treatment and monitoring of therapy effectiveness. The results of recent research suggests that they may play an important role in standard oncology practice. Simultaneous measurement of KIM-1 and NGAL in urine can play a crucial role in carcinogenesis assessment and cancer progression. In the future, they can become rapid diagnostic indicators, which allow one to determine cancer subtype leading to biopsy replacement and therapy improvement. In the present work, beside biochemical characteristics of KIM-1 and NGAL, we will also discuss their role in the diagnosis and assessment of development of cancer.

  11. KIM-1 and NGAL as potential biomarkers for the diagnosis and cancer progression

    Directory of Open Access Journals (Sweden)

    Zofia Marchewka

    2016-04-01

    Full Text Available On the basis of scientific literature, there is growing evidence that KIM-1 and NGAL are interesting and promising biomarkers not only in acute and chronic inflammatory processes but also in oncogenesis. There are a number of studies which investigate their possible use in diagnosis, treatment and monitoring of therapy effectiveness. The results of recent research suggests that they may play an important role in standard oncology practice. Simultaneous measurement of KIM-1 and NGAL in urine can play a crucial role in carcinogenesis assessment and cancer progression. In the future, they can become rapid diagnostic indicators, which allow one to determine cancer subtype leading to biopsy replacement and therapy improvement. In the present work, beside biochemical characteristics of KIM-1 and NGAL, we will also discuss their role in the diagnosis and assessment of development of cancer.

  12. Bridging communication between public and government: a case study on kim surabaya

    Science.gov (United States)

    Aji, G. G.; Tsuroyya; Dewi, P. A. R.

    2018-01-01

    In democratic era, the public communication paradigm has shifted from a one-way socialization to more interactive one. As a consequence of freedom of speech, the public can Actively communicate with the government and vice versa. The problem is government is almost impossible to reach all public groups. Therefore, they has created the concept of social institutions as a communication hub between the government and its public, named the Kelompok Informasi Masyarakat (KIM). This research examines the activity of KIM in Surabaya on bridging public between government and the public. Using a case study approach, this research utilized various techniques of data collection such as: interviews, observation, and documentation. The results Showed that KIM plays a role in the two-way flow of information; to diseminate program and submit complaints and suggestions from the public about the policy. This study confirm the urgency of utilization on various channels in communicating with the public.

  13. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    Energy Technology Data Exchange (ETDEWEB)

    Gurpinar, Emre [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Group; Iannuzzo, Francesco [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Yang, Yongheng [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Castellazzi, Alberto [Univ. of Nottingham (United Kingdom). Power Electronics, Machines and Control (PEMC); Blaabjerg, Frede [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology

    2017-11-23

    Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

  14. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  15. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core...

  16. Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2006-01-01

    In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance simul...

  17. A gate current 1/f noise model for GaN/AlGaN HEMTs

    International Nuclear Information System (INIS)

    Liu Yu'an; Zhuang Yiqi

    2014-01-01

    This work presents a theoretical and experimental study on the gate current 1/f noise in AlGaN/GaN HEMTs. Based on the carrier number fluctuation in the two-dimensional electron gas channel of AlGaN/GaN HEMTs, a gate current 1/f noise model containing a trap-assisted tunneling current and a space charge limited current is built. The simulation results are in good agreement with the experiment. Experiments show that, if V g < V x (critical gate voltage of dielectric relaxation), gate current 1/f noise comes from the superimposition of trap-assisted tunneling RTS (random telegraph noise), while V g > V x , gate current 1/f noise comes from not only the trap-assisted tunneling RTS, but also the space charge limited current RTS. This indicates that the gate current 1/f noise of the GaN-based HEMTs device is sensitive to the interaction of defects and the piezoelectric relaxation. It provides a useful characterization tool for deeper information about the defects and their evolution in AlGaN/GaN HEMTs. (semiconductor devices)

  18. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  19. Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

    International Nuclear Information System (INIS)

    Cheng, Stone; Chou, Po-Chien; Chieng, Wei-Hua; Chang, E.Y.

    2013-01-01

    This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. -- Highlights: ► An enhanced packaging structure designed for AlGaN/GaN HEMTs on an Si substrate. ► The V-groove copper base is designed on the device periphery surface heat conduction for enhancing Si substrate thermal dissipation. ► The proposed device shows a lower thermal resistance and upgrade in thermal conductivity capability. ► This work provides useful thermal IR imagery information to aid in designing high efficiency package for GaN HEMTs on Si

  20. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    International Nuclear Information System (INIS)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng; Castellazzi, Alberto; Blaabjerg, Frede

    2017-01-01

    Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

  1. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

    Science.gov (United States)

    Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

    2015-10-01

    Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

  2. GaN growth on sapphire by MOCVD - Material for HEMT structures

    NARCIS (Netherlands)

    Grzegorczyk, A.P.

    2006-01-01

    This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed.

  3. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  4. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  5. Urinary KIM-1 and AQP-1 in patients with clear renal cell carcinoma: Potential noninvasive biomarkers

    Directory of Open Access Journals (Sweden)

    Mijušković Mirjana

    2016-01-01

    Full Text Available Background/Aim. Kidney injury molecule-1 (KIM-1 and aquaporin-1 (AQP-1 are potential early urinary biomarkers of clear renal cell carcinoma (cRCC. The aim of this study was to ascertain relationship between the urine concentrations KIM-1 and AQP-1 with tumor size, grade, pT stage and type of operation (radical or partial nephrectomy in patients with cRCC. Methods. Urinary concentrations of urinary KIM-1 (uKIM-1 and urinary AQP-1 (uAQP-1 were determined by commercially available ELISA kits. The analysis included 40 patients undergoing partial or radical nephrectomy for cRCC and 40 age- and sex-matched healthy adult volunteers. Results. The median preoperative concentrations of KIM-1 in the cRCC group [0.724 ± 1.120 ng/mg urinary creatinine (Ucr] were significantly greater compared with controls (healthy volunteers (0.210 ± 0.082 ng/mgUcr (p = 0.0227. Postoperatively, uKIM-1 concentration decreased significantly to control values (0.177 ± 0.099 ng/mgUcr vs 0.210 ± 0.082 ng/mgUcr, respectively. The size, grade and stage of tumor were correlated positively with preoperative uKIM-1 concentrations. Contrary to these results, concentrations of uAQP-1 in the cRCC group were significantly lower (0.111 ± 0.092 ng/mgUcr compared with the control group (0.202 ± 0.078 ng/mgUcr (p = 0.0014. Postoperatively, the concentrations of uAQP-1 increased progressively up to control values, approximately. We find no significant correlation between preoperative uAQP-1 concentrations and tumor size, grade and stage. Conclusion. uKIM-1 was found to be a reliable diagnostic marker of cRCC, based on its significantly increased values before and decreased values after the nephrectomy. [Projekat Ministarstva nauke Republike Srbije, br. III41018

  6. Against the Nihilism of Suffering and Death: Richard E. K. Kim and His Works

    Directory of Open Access Journals (Sweden)

    Jooyeon Rhee

    2016-03-01

    Full Text Available This article examines the life and works of Richard E. K. Kim (1932–2009, a first-generation Korean diasporic writer in the United States. It focuses on how Kim struggled to overcome the nihilism of suffering and death that derived from colonialism and the Korean War through his literary works. Kim witnessed firsthand these two major historical events, which caused irrevocable psychological and physical damage to many people of his generation. In his autobiographical fiction, he conveys painful memories of the events by reviving the voices of people in that era. What his works offer us goes beyond vivid memories of the past, however; they also present the power of forgiveness as a condition to overcome the nihilism of suffering and death. Remembrance and forgiveness are, therefore, two major thematic pillars of his works that enable us to connect to these difficult and traumatic times. These themes are portrayed in such a gripping way mainly because Kim tried to maintain a certain distance—an emotional and linguistic distance—from the familiar, in order to elucidate the reality of the human condition: an ontological position of the exile from which he produced his works. This article argues that Kim’s works provide us the possibility to transcend the nihilism of historical trauma through articulating the meaning of remembrance and forgiveness from his self-assumed position of exile.

  7. Non-integrability of the Armbruster-Guckenheimer-Kim quartic Hamiltonian through Morales-Ramis theory

    OpenAIRE

    Acosta-Humánez, P.; Alvarez-Ramírez, M.; Stuchi, T.

    2017-01-01

    We show the non-integrability of the three-parameter Armburster-Guckenheimer-Kim quartic Hamiltonian using Morales-Ramis theory, with the exception of the three already known integrable cases. We use Poincar\\'e sections to illustrate the breakdown of regular motion for some parameter values.

  8. Arhitektuurimuuseum vaatab Aasiasse / Kim Sung Hong ; intervjueerinud Karin Hallas-Murula

    Index Scriptorium Estoniae

    Kim Sung Hong

    2009-01-01

    Näituse kuraatori Kim Sung Hongiga 21. aprillini Eesti Arhitektuurimuuseumis avatud Lõuna-Korea kaasaegse arhitektuuri näitusest "Megacity network" ("Megalinna võrgustik"), Korea arhitektuurist, arhitektidest, muinsuskaitsest ja avalikust ruumist. Näituse kujundas Hwang Doo Jin

  9. A Misleading Review of Response Bias: Comment on McGrath, Mitchell, Kim, and Hough (2010)

    Science.gov (United States)

    Rohling, Martin L.; Larrabee, Glenn J.; Greiffenstein, Manfred F.; Ben-Porath, Yossef S.; Lees-Haley, Paul; Green, Paul; Greve, Kevin W.

    2011-01-01

    In the May 2010 issue of "Psychological Bulletin," R. E. McGrath, M. Mitchell, B. H. Kim, and L. Hough published an article entitled "Evidence for Response Bias as a Source of Error Variance in Applied Assessment" (pp. 450-470). They argued that response bias indicators used in a variety of settings typically have insufficient data to support such…

  10. Lõuna-Korea teatel võib Kim peagi surra / Evelyn Kaldoja

    Index Scriptorium Estoniae

    Kaldoja, Evelyn, 1980-

    2009-01-01

    Viidates Lõuna-Korea ja Hiina luureandmetele, väidab Lõuna-Korea meedia, et Põhja-Korea liidril Kim Jong-ilil on kõhunäärmevähk ja talle pole antud elada rohkem kui 5 aastat. Põhja-Korea valitsejadünastia

  11. Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco

    2016-01-01

    contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours......In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main...

  12. Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

    Science.gov (United States)

    Nirmal, D.; Arivazhagan, L.; Fletcher, A. S. Augustine; Ajayan, J.; Prajoon, P.

    2018-01-01

    In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain current model is derived. This model is useful to correlate the impact of intrinsic capacitance and conductance on drain current collapse. The proposed device suppressed the current collapse phenomena by 10% compared with the conventional AlGaN/GaN HEMT. Moreover, the DC characteristics of the simulated device shows a drain current of 900 mA/mm, breakdown voltage of 291 V and transconductance of 175 mS/mm. Besides, the intrinsic capacitance and conductance parameters are extracted and its impact on drain current is analysed. Finally, the simulation results obtained were in compliance with the derived mathematical model of AlGaN/GaN HEMT.

  13. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Cordier, Y.; Lecotonnec, A.; Chenot, S. [CRHEA-CNRS, Valbonne (France); Baron, N. [CRHEA-CNRS, Valbonne (France); PICOGIGA International, Courtaboeuf (France); Nacer, F.; Goullet, A.; Besland, M.P. [Institut des Materiaux Jean Rouxel IMN, Universite de Nantes (France); Lhermite, H. [Institut d' Electronique et de Telecommunications de Rennes (IETR), Universite de Rennes 1 (France); El Kazzi, M.; Regreny, P.; Hollinger, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS, Ecully (France)

    2009-06-15

    In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiN{sub x} dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and current-voltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2015-01-01

    Full Text Available A novel enhancement-mode (E-mode Metal-Insulator-Semiconductor- (MIS- HEMT with selective fluorine ion (F− treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT. First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV. Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID. Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT, SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat by 28%.

  15. North Korean Leadership Dynamics and Decision-making under Kim Jong-un: A Second Year Assessment

    Science.gov (United States)

    2014-03-01

    Kim Kyong-hui was critically ill. Kim has a reported history of alcoholism and depression , which was exacerbated in the mid-2000s with her mari- tal...problems and the death of her daughter, Jang Kum-song, who com- mitted suicide in 2006. Some reports claim that she is also suffering from... teens , were

  16. Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

    Science.gov (United States)

    Lee, In Hak; Lee, Chul; Choi, Byoung Ki; Yun, Yeseul; Chang, Young Jun; Jang, Seung Yup

    2018-04-01

    We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN ( 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.

  17. Noise performance in AlGaN/GaN HEMTs under high drain bias

    International Nuclear Information System (INIS)

    Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

    2009-01-01

    The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

  18. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

    International Nuclear Information System (INIS)

    Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

    2014-01-01

    The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

  19. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

    Science.gov (United States)

    Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

    2017-07-25

    Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

  20. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Science.gov (United States)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  1. The diagnostic importance of the new marker KIM-1 in kidney damage

    Directory of Open Access Journals (Sweden)

    Zofia Marchewka

    2013-07-01

    Full Text Available In recent years, the rapid development of scientific research led to the introduction of strategies based on new markers that allow for estimation of the latent disease period before the clinical symptoms of actual kidney failure are revealed.The experimental tests carried out on animals and cell lines derived from the proximal tubule have made possible the detection of genes that are induced early after hypoxia [1].The protein products of these genes can be considered as useful markers for the diagnosis of renal failure. The induction of gene KIM-1 (called Kidney Injury Molecule-1 results in the formation of protein that can be considered as a diagnostic marker.This work describes the data on the structure, biological function and importance of determining the concentrations of KIM-1 in the diagnosis of drug-induced toxicity and kidney damage.

  2. [The diagnostic importance of the new marker KIM-1 in kidney damage].

    Science.gov (United States)

    Marchewka, Zofia; Płonka, Joanna

    2013-07-24

    In recent years, the rapid development of scientific research led to the introduction of strategies based on new markers that allow for estimation of the latent disease period before the clinical symptoms of actual kidney failure are revealed. The experimental tests carried out on animals and cell lines derived from the proximal tubule have made possible the detection of genes that are induced early after hypoxia. The protein products of these genes can be considered as useful markers for the diagnosis of renal failure. The induction of gene KIM-1 (called Kidney Injury Molecule-1) results in the formation of protein that can be considered as a diagnostic marker. This work describes the data on the structure, biological function and importance of determining the concentrations of KIM-1 in the diagnosis of drug-induced toxicity and kidney damage.

  3. Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Kaushik, J K; Balakrishnan, V R; Muralidharan, R; Panwar, B S

    2013-01-01

    The experimentally observed inverse temperature dependence of the reverse gate leakage current in AlGaN/GaN HEMT is explained using a virtual gate trap-assisted tunneling model. The virtual gate is formed due to the capture of electrons by surface states in the vicinity of actual gate. The increase and decrease in the length of the virtual gate with temperature due to trap kinetics are used to explain this unusual effect. The simulation results have been validated experimentally. (paper)

  4. Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier

    OpenAIRE

    Matiss, A.; Janssen, G.; Bertenburg, R. M.; Brockerhoff, W.; Tegude, F.J.

    2004-01-01

    To improve sensitivity of optical receivers, a special integration concept is chosen that includes a pinphotodiode, high-electron mobility transistors (HEMT) and heterostructure bipolar transistors (HBT) on a single substrate. This work focuses on the optimization of the amplifier design to achieve lowest input noise currents of a transimpedance amplifier, and thus highest receiver sensitivity. The respective advantages of the components used are investigated with respect...

  5. Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

    Science.gov (United States)

    Radisic, Vesna; Deal, W. R.; Mei, X. B.; Yoshida, Wayne; Liu, P. H.; Uyeda, Jansen; Lai, Richard; Samoska, Lorene; Fung, King Man; Gaier, Todd; hide

    2010-01-01

    In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

  6. Clinical significance of NGAL and KIM-1 for acute kidney injury in patients with scrub typhus.

    Directory of Open Access Journals (Sweden)

    In O Sun

    Full Text Available The aim of this study is to investigate the clinical significance of neutrophil gelatinase-associated lipocalin (NGAL and kidney injury molecule-1 (KIM-1 for acute kidney injury (AKI in patients with scrub typhus.From 2014 to 2015, 145 patients were diagnosed with scrub typhus. Of these, we enrolled 138 patients who were followed up until renal recovery or for at least 3 months. We measured serum and urine NGAL and KIM-1 levels and evaluated prognostic factors affecting scrub typhus-associated AKI.Of the 138 patients, 25 had scrub typhus-associated AKI. The incidence of AKI was 18.1%; of which 11.6%, 4.3%, and 2.2% were classified as risk, injury, and failure, respectively, according to RIFLE criteria. Compared with patients in the non-AKI group, patients in the AKI group were older and showed higher total leukocyte counts and hypoalbuminemia or one or more comorbidities such as hypertension (72% vs 33%, p<0.01, diabetes (40% vs 14%, p<0.01, or chronic kidney disease (32% vs 1%, p<0.01. In addition, serum NGAL values (404± 269 vs 116± 78 ng/mL, P<0.001, KIM-1 values (0.80± 0.52 vs 0.33± 0.68 ng/mL, P<0.001, urine NGAL/creatinine values (371± 672 vs 27± 39 ng/mg, P<0.001 and urine KIM-1/creatinine values (4.04± 2.43 vs 2.38± 1.89 ng/mg, P<0.001 were higher in the AKI group than in the non-AKI group. By multivariate logistic regression, serum NGAL and the presence of chronic kidney disease were significant predictors of AKI.Serum NGAL might be an additive predictor for scrub typhus-associated AKI.

  7. North Korea after Kim Chong-il: Leadership Dynamics and Potential Crisis Scenarios

    Science.gov (United States)

    2011-11-01

    legal responsibility, and with specified procedures , the actual process is different.3 To date, regime dynamics in the Kim Chong-il era have been... procedures and regulations provide the outlines of formal rule, the 3 For a detailed examination of how...was also made an alternate member. It is also worth noting that 10 of the 12 members of the NDC were represented in the new Politburo lineup , thus

  8. The first clinical treatment with kilovoltage intrafraction monitoring (KIM): A real-time image guidance method

    DEFF Research Database (Denmark)

    Keall, Paul J.; Aun Ng, Jin; O'Brien, Ricky

    2015-01-01

    on September 16, 2014. Methods: KIM uses current and prior 2D x-ray images to estimate the 3D target position during cancer radiotherapy treatment delivery. KIM software was written to process kilovoltage (kV) images streamed from a standard C-arm linear accelerator with a gantry-mounted kV x-ray imaging...... system. A 120° pretreatment kV imaging arc was acquired to build the patient-specific 2D to 3D motion correlation. The kV imager was activated during the megavoltage (MV) treatment, a dual arc VMAT prostate treatment, to estimate the 3D prostate position in real-time. All necessary ethics, legal......, and regulatory requirements were met for this clinical study. The quality assurance processes were completed and peer reviewed. Results: During treatment, a prostate position offset of nearly 3 mm in the posterior direction was observed with KIM. This position offset did not trigger a gating event. After...

  9. Ab initio and Gordon--Kim intermolecular potentials for two nitrogen molecules

    International Nuclear Information System (INIS)

    Ree, F.H.; Winter, N.W.

    1980-01-01

    Both ab initio MO--LCAO--SCF and the electron-gas (or Gordon--Kim) methods have been used to compute the intermolecular potential (Phi) of N 2 molecules for seven different N 2 --N 2 orientations. The ab initio calculations were carried out using a [4s3p] contracted Gaussian basis set with and without 3d polarization functions. The larger basis set provides adequate results for Phi>0.002 hartree or intermolecular separations less than 6.5--7 bohr. We use a convenient analytic expression to represent the ab initio data in terms of the intermolecular distance and three angles defining the orientations of the two N 2 molecules. The Gordon--Kim method with Rae's self-exchange correction yields Phi, which agrees reasonably well over a large repulsive range. However, a detailed comparison of the electron kinetic energy contributions shows a large difference between the ab initio and the Gordon--Kim calculations. Using the ab initio data we derive an atom--atom potential of the two N 2 molecules. Although this expression does not accurately fit the data at some orientations, its spherical average agrees with the corresponding average of the ab initio Phi remarkably well. The spherically averaged ab initio Phi is also compared with the corresponding quantities derived from experimental considerations. The approach of the ab initio Phi to the classical quadrupole--quadrupole interaction at large intermolecular separation is also discussed

  10. Effects of combined gate and ohmic recess on GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Sunil Kumar

    2016-09-01

    Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

  11. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Koo, Sang-Mo; Kang, Min-Seok

    2014-01-01

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

  12. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

    2014-10-15

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

  13. Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

    Science.gov (United States)

    Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

    2017-12-01

    This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

  14. New AlGaN/GaN HEMTs employing both a floating gate and a field plate

    International Nuclear Information System (INIS)

    Lim, Jiyong; Choi, Young-Hwan; Kim, Young-Shil; Han, Min-Koo

    2010-01-01

    We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate-drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of -100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm -1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm -1 , respectively. The maximum transconductance of the proposed device was 102.9 mS mm -1 , while those of the conventional devices were 97.8 and 101.9 mS mm -1 . The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.

  15. A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

    Science.gov (United States)

    Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

    2017-11-01

    In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

  16. A dual-mode driver IC with monolithic negative drive-voltage capability and digital current-mode controller for depletion-mode GaN HEMT

    NARCIS (Netherlands)

    Wen, Y.; Rose, M.; Fernandes, R.; van Otten, R.; Bergveld, H.J.; Trescases, O.

    2017-01-01

    This work presents a driver and controller integrated circuit (IC) for depletion-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The dual-mode driver can be configured for cascode-drive (CD) or HEMT-drive (HD) mode. In the CD mode, a cascode low-voltage DMOS is driven to

  17. North Korean Leadership Dynamics and Decision-making under Kim Jong-un: A First Year Assessment

    Science.gov (United States)

    2013-09-01

    Kim Jong-un’s ’Sick’ Aunt Resurfaces,” Chosun Ilbo Online, 27 July 2013. Kim has a reported history of alcoholism and depression , which was...exacer- bated in the mid-2000s with her marital problems and the death of her daughter, Jang Kum-song, who committed suicide in 2006. Some reports claim...the Party and state apparatus. She was born in 1974, and, when in her teens , began work in Kim Il-sung’s Presidential Office. She moved over to the

  18. Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Yang, Yongheng; Iannuzzo, Francesco

    2016-01-01

    In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibil......In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different...... be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide...

  19. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yao; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Xue Jun-Shuai; Ma Xiao-Hua; Wang Chong; Yang Lin-An; Zhang Jin-Feng; Kuang Xian-Wei; Yang Cui

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies. (rapid communication)

  20. Urinary NGAL, KIM-1 and L-FABP concentrations in antenatal hydronephrosis.

    Science.gov (United States)

    Noyan, Aytul; Parmaksiz, Gonul; Dursun, Hasan; Ezer, Semire Serin; Anarat, Ruksan; Cengiz, Nurcan

    2015-10-01

    The clinical tests currently in use for obstructive nephropathy (such as renal ultrasonography, differential radionuclide renal scans and urinary creatinine concentration data) are not efficient predictors of the subsequent clinical course. Novel and simple biomarkers are required which, if proven, could be clinically beneficial in determining if a patient is eligible for surgery or reno-protective therapy. More recently, the interest of clinicians has focused on the potential of urinary neutrophil gelatinase-associated lipocalin (uNGAL), urinary kidney injury molecule-1 (uKIM-1) and urinary liver-type fatty acid-binding proteins (uL-FABP) as biomarkers for renal function in children with hydronephrosis (HN). The purpose of this study was to investigate possible clinical applications of uNGAL, uKIM-1 and uL-FABP as beneficial non-invasive biomarkers to determine whether or not surgical intervention is required in children with HN. Renal ultrasonography and radionuclide renal scans were used as diagnostic tools to detect HN. Patients were divided into two groups based on the antero-posterior diameter of their renal pelvis and the presence of dysfunction. Group 1 included 26 children with severe HN (with dysfunction), and group 2 consisted of 36 children with mild HN (without dysfunction). Urine samples were collected from 62 children with HN and 20 healthy children. Hydronephrosis was more common in males than in females, with a male to female ratio of 9:1 in the study sample. The incidence of left kidney involvement (32 patients) was slightly higher than right kidney involvement (28 patients). Compared with controls and group 2, the ratio of uNGAL to creatinine was significantly higher in group 1 (p hydronephrosis and dysfunction had significantly increased uNGAL, and uNGAL/Cr concentrations. However, uKIM-1, uKIM-1/Cr, uL-FABP and uL-FABP/Cr concentrations were not significantly different when compared with controls. These results support the use of u

  1. Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.

    Science.gov (United States)

    Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

    2016-02-23

    We report improved sensitivity to NO, NO₂ and NH₃ gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO₂ and 15 ppm-NH₃ is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

  2. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

    International Nuclear Information System (INIS)

    Zhao Sheng-Lei; Mi Min-Han; Luo Jun; Wang Yi; Dai Yang; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Hou Bin

    2014-01-01

    In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Chen Wanjun; Zhang Jing; Zhang Bo; Chen, Kevin Jing

    2013-01-01

    The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal—semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied. (semiconductor devices)

  4. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  5. A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

    Science.gov (United States)

    2015-07-01

    A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs Andong Huang1, 2, ZhengZhong2, 3, and Yongxin Guo2, 3...Suzhou Research Institute, Suzhou, China Abstract — A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is...parameter error function. The extrinsic elements are optimized at multi-bias points and the intrinsic ones at specific bias points. Only broad ranges

  6. Suppression of the self-heating effect in GaN HEMT by few-layer graphene heat spreading elements

    Science.gov (United States)

    Volcheck, V. S.; Stempitsky, V. R.

    2017-11-01

    Self-heating has an adverse effect on characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs). Various solutions to the problem have been proposed, however, a temperature rise due to dissipated electrical power still hinders the production of high power and high speed GaN devices. In this paper, thermal management of GaN HEMT via few-layer graphene (FLG) heat spreading elements is investigated. It is shown that integration of the FLG elements on top of the device structure considerably reduces the maximum temperature and improves the DC and small signal AC performance.

  7. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

    OpenAIRE

    Kühn, J.

    2011-01-01

    This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

  8. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

    International Nuclear Information System (INIS)

    Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

    2010-01-01

    This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

  9. Clinical significance of NGAL and KIM-1 for acute kidney injury in patients with scrub typhus.

    Science.gov (United States)

    Sun, In O; Shin, Sung Hye; Cho, A Young; Yoon, Hyun Ju; Chang, Mi Yok; Lee, Kwang Young

    2017-01-01

    The aim of this study is to investigate the clinical significance of neutrophil gelatinase-associated lipocalin (NGAL) and kidney injury molecule-1 (KIM-1) for acute kidney injury (AKI) in patients with scrub typhus. From 2014 to 2015, 145 patients were diagnosed with scrub typhus. Of these, we enrolled 138 patients who were followed up until renal recovery or for at least 3 months. We measured serum and urine NGAL and KIM-1 levels and evaluated prognostic factors affecting scrub typhus-associated AKI. Of the 138 patients, 25 had scrub typhus-associated AKI. The incidence of AKI was 18.1%; of which 11.6%, 4.3%, and 2.2% were classified as risk, injury, and failure, respectively, according to RIFLE criteria. Compared with patients in the non-AKI group, patients in the AKI group were older and showed higher total leukocyte counts and hypoalbuminemia or one or more comorbidities such as hypertension (72% vs 33%, pscrub typhus-associated AKI.

  10. Children on Social Media, Twiter and Facebook (profile of Beyonce and Kim Kardashian

    Directory of Open Access Journals (Sweden)

    Anamarija Bilan

    2017-09-01

    Full Text Available Publishing children’s photos in the media violates their privacy right, which is protected, guaranteed and regulated by numerous international and Croatian laws and regulations. Likewise, publishing photos of children on social network profiles, such as Facebook or Twitter, violates the right to privacy. In this paper it will be researched the extent to which children’s photos are being disclosed and their privacy is being undermined in case of two Facebook and two Twitter profiles - Beyonce Knowles and Kim Kardashian. It will also research whether children are used for business purposes, whether they are advertising some of their products or shows, and so on, with the photographs of children. The content analysis methodology analyzed the Facebook and Twitter profiles of two respondents in the period from January 1 to February 22, 2016, during which they published a total of 459 posts on profiles of both networks. The analysis found that the total number of “posts” shows a small number of photographs of children but also that those published by Kim Kardashian are often used to promote or promote some of the products or programs, which violates the privacy of children and increases the number “like”.

  11. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  12. Compact modelling of InAlN/GaN HEMT for low noise applications

    International Nuclear Information System (INIS)

    Sakalas, P; Šimukovič, A; Matulionis, A; Piotrowicz, S; Jardel, O; Delage, S L; Mukherjee, A

    2014-01-01

    This paper presents results of high-frequency noise modelling of InAlN/GaN high electron mobility transistors (HEMTs) with different formulations of the minimum noise figure NF min . Current–voltage characteristics and s-parameters of 0.15 μm gate length and 2 × 75 μm gate width InAlN/GaN HEMTs were measured at room temperature in a wide frequency range (300 MHz to 50 GHz) and bias range (V GS from −4.8 to 1 V and V DS from 0 to 21 V). Both the EEHEMT1 and Angelov GaN compact models yielded excellent agreement for transfer and output characteristics, transconductance g m , and f T , f max. High-frequency noise parameters NF min , R n , Γ OPT of InAlN/GaN HEMT were measured in 8–50 GHz frequency band. Noise formulation within the EEHEMT1 model underestimates the measured NF min and R n . The well known three-parameter PRC noise model is in a better agreement with the measured data but neglects the shot noise resulting from the gate leakage. The inductive degenerated source matching method and EEHEMT1 were used to design a single stage LNA operated at 8 GHz frequency. A 10 dB gain with an input reflection of −12 dB with a 2.5 dB of noise factor were obtained at 8 GHz. (paper)

  13. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Boardman, D

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  14. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    International Nuclear Information System (INIS)

    Boardman, D.

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  15. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    OpenAIRE

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten; Vidkjær, Jens

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 2...

  16. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.; Veksler, Dmitry B.; Salama, Khaled N.; Zhang, Xi-C.; Shur, Michael S.

    2012-01-01

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  17. Reliability improvement in GaN HEMT power device using a field plate approach

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung

    2017-07-01

    This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.

  18. AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

    Directory of Open Access Journals (Sweden)

    S. Taking

    2011-01-01

    Full Text Available Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1 Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2 mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

  19. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.

    2012-07-28

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  20. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    Science.gov (United States)

    Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-12-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

  1. New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

    Science.gov (United States)

    Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

    2018-06-01

    New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

  2. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    International Nuclear Information System (INIS)

    Mao Wei; Fan Ju-Sheng; Du Ming; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2016-01-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. (paper)

  3. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

    Science.gov (United States)

    Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

    2017-12-01

    We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

  4. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

    Science.gov (United States)

    Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

    2017-06-01

    We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages ( V th) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

  5. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  6. Prospects for 6-party talks: Nuclear weapons are a means of survival for Kim Jong Un

    International Nuclear Information System (INIS)

    Miyake, Kunihiko

    2012-04-01

    The author considers the impact of leader Kim Jong Il's death on 6-party talks surrounding the nuclear issue. Firstly, the history of these 6-party talks has to be reexamined to ensure an accurate understanding of their 'objectives and limitations' because the author believes that there are 3 'unpleasant truths' behind these talks, held 6 times since the summer of 2003, that no one wants to talk about. 1. North Korea has no interest in abandoning nuclear weapons; 2. Japan, the U.S., China, and South Korea do not want war; 3. The nuclear issue will not be resolved by 6-party talks. In fact, there is little potential that 6-party talks which aim to resolve the North Korean nuclear issue will move towards a new substantive agreement

  7. Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

    Science.gov (United States)

    Saravana Kumar, R.; Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.

    2018-03-01

    The paper reports on the influence of a barrier thickness and gate length on the various device parameters of double gate high electron mobility transistors (DG-HEMTs). The DC and RF performance of the device have been studied by varying the barrier thickness from 1 to 5 nm and gate length from 10 to 150 nm, respectively. As the gate length is reduced below 50 nm regime, the barrier thickness plays an important role in device performance. Scaling the gate length leads to higher transconductance and high frequency operations with the expense of poor short channel effects. The authors claim that the 30-nm gate length, mole fractions tuned In0.53Ga0.47As/In0.7Ga0.3As/In0.53Ga0.47As subchannel DG-HEMT with optimised device structure of 2 nm In0.48Al0.52As barrier layer show a peak gm of 3.09 mS/µm, VT of 0.29 V, ION/IOFF ratio of 2.24 × 105, subthreshold slope 73 mV/decade and drain induced barrier lowering 68 mV/V with fT and fmax of 776 and 905 GHz at Vds = 0.5 V is achieved. These superior performances are achieved by using double-gate architecture with reduced gate to channel distance.

  8. Analysis of the thermal behavior of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Russo, Salvatore; D’Alessandro, Vincenzo; Costagliola, Maurizio; Sasso, Grazia; Rinaldi, Niccolò

    2012-01-01

    Highlights: ► The thermal behavior of advanced multifinger AlGaN/GaN HEMTs grown on SiC is analyzed. ► The study is performed through accurate FEM simulations and DC/dynamic measurements. ► The FEM analysis is supported by an in-house tool devised for a smart mesh generation. ► Illustrative technology/layout guidelines to minimize the thermal issues are provided. - Abstract: The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM simulations – based on a novel in-house tool devised to automatically build the device mesh – are performed using a commercial software to explore the influence of various layout and technological solutions on the temperature field. An in-house routine is employed to determine the Foster/Cauer networks suited to describe the dynamic heat propagation through the device structure. To conclude, various experimental techniques are employed to assess the thermal resistance and to allow the monitoring of the thermal impedance versus time of the transistors under test.

  9. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    International Nuclear Information System (INIS)

    Chou, Po-Chien; Cheng, Stone

    2015-01-01

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit

  10. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Po-Chien; Cheng, Stone, E-mail: stonecheng@mail.nctu.edu.tw

    2015-08-15

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

  11. Extended behavioural modelling of FET and lattice-mismatched HEMT devices

    Science.gov (United States)

    Khawam, Yahya; Albasha, Lutfi

    2017-07-01

    This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.

  12. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  13. Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

    NARCIS (Netherlands)

    Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

    2004-01-01

    We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

  14. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d...

  15. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    International Nuclear Information System (INIS)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

  16. Field plated 0.15 μm GaN HEMTs for millimeter-wave application

    International Nuclear Information System (INIS)

    Ren Chunjiang; Li Zhonghui; Yu Xuming; Wang Quanhui; Wang Wen; Chen Tangsheng; Zhang Bin

    2013-01-01

    SiN dielectrically-defined 0.15 μm field plated GaN HEMTs for millimeter-wave application have been presented. The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical deposition. Electron beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field plate. Gate recessing was performed to control the threshold voltage of the devices. The fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 GHz. Load-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%, respectively, for a 0.15 mm gate width device operated at a 24 V drain bias. The developed 0.15 μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development. (semiconductor devices)

  17. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  18. Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

    Science.gov (United States)

    Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

    2016-12-01

    This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

  19. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

    Science.gov (United States)

    Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

    2017-09-01

    In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

  20. Social influence of a religious hero: the late Cardinal Stephen Kim Sou-hwan's effect on cornea donation and volunteerism.

    Science.gov (United States)

    Bae, Hyuhn-Suhck; Brown, William J; Kang, Seok

    2011-01-01

    This study examined the mediated influence of a celebrated religious hero in South Korea, Cardinal Stephen Kim, through two forms of involvement--parasocial interaction and identification--on intention toward cornea donation and volunteerism, and it investigated how the news media diffused of his death. A structural equation modeling analysis with a Web-based voluntary survey of more than 1,200 people in South Korea revealed a multistep social influence process, beginning with parasocial interaction with Cardinal Kim, leading to identification with him, which predicted intention toward cornea donation and volunteerism. Additional investigations found that news of Cardinal Kim's death diffused rapidly through media and interpersonal communication. Results of this study demonstrate that religious leaders who achieve a celebrity hero status can prompt public discussion of important issues rather quickly through extensive media coverage, enabling them to promote prosocial behavior and positively affect public health.

  1. Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.; Valinataj, Mojtaba

    2017-12-01

    In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electric field is suggested. The main idea of this work is to improve the Direct Current (DC) and Radio Frequency (RF) properties of device by modifying the depletion region in the channel. The proposed structure consists of a floating metal like a comb with triple tooth which is located in the space between the gate and drain and inside the buffer layer. We called the proposed structure as triple tooth HEMT (TT-HEMT). The RF and DC characteristics of the proposed structure are studied using numerical simulations. The breakdown voltage ( V BR ) increases to 169.5 V for the proposed structure in comparison with 103 V for the conventional HEMT (C-HEMT) due to the modified electric field distribution in the channel of the TT-HEMT structure. The maximum output power density ( P max ) of the TT-HEMT structure is 60.4% greater than that of the C-HEMT. The optimized results show that the maximum oscillation frequency ( f max ) and cut-off frequency (fT) of the proposed structure improve 111% and 26.5%, respectively compared to the C-HEMT structure. In addition, the maximum available gain (MAG) of the TT-HEMT structure is obtained 8.5 dB higher than that of the C-HEMT structure at the frequency of 40 GHz. The optimal results show that whatever the number of teeth on metal increases, the depletion region in the channel is modified more and the breakdown voltage increases, as well. Besides, the output power density ( P max ) is improved with the increasing number of teeth on metal (N). This characteristic is also true, for the cut-off frequency ( f T ), the maximum oscillation frequency ( f max ) and the maximum available gain (MAG) of the proposed structure. However, the drain current ( I D ) of the proposed structure is reduced.

  2. High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Krost, Alois; Hauser, Marcus J B

    2014-01-01

    The dynamics of cells of the slime mould Physarum polycephalum are investigated with a planar AlGaN/GaN high electron mobility transistor (HEMT) without any gate metallization. The source–drain contacts are used in a two-electrode arrangement whereas the free gate surface area is occupied by the Physarum cell. In order to understand the measured signals, basic properties of the interface between the cell and the HEMT surface were analysed by impedance spectroscopy. At high frequencies the interface impedance is governed by the conductance of the cell due to a direct current through the HEMT/cell interface. The locomotive dynamics of Physarum were recorded by the source–drain impedance at 10 kHz in combination with simultaneous video imaging that monitored the degree of occupancy of the HEMT surface by the cell. A precise correlation was found between the impedance and the coverage of the HEMT surface by the cell. It is observed that the entire region between the contacts is sensitive to the cell activity. Well-resolved cellular oscillations were observed for all measured parameters. Their periods corresponded to the typical periods of the intracellular shuttle streaming of protoplasma in Physarum. This demonstrates that high-frequency impedance measurements with AlGaN/GaN HEMT structures are well suited for the analysis of both the static parts of single Physarum cells as well as of their dynamic behaviour, such as their expansion and motility. (paper)

  3. Moral is political Notions of ideal citizenship in Lie Kim Hok’s Hikajat Khonghoetjoe

    Directory of Open Access Journals (Sweden)

    Evi Sutrisno

    2017-04-01

    Full Text Available This paper argues that the Hikajat Khonghoetjoe (The life story of Confucius, written by Lie Kim Hok in 1897, is a medium to propose modern ideas of flexible subjectivity, cosmopolitanism, active citizenship and the concepts of good governance to the Chinese Peranakans who experienced political and racial discrimination under Dutch colonization. Using the figure of Confucius, Lie aimed to cultivate virtuous subjects who apply their faith and morality in political sphere. He intended to raise political awareness and rights among the Chinese as colonial subjects and to valorize their bargaining power with the Dutch colonial government. By introducing Confucianism, Lie proposed that the Chinese reconnect themselves with China as an alternative patronage which could subvert White supremacy. Instead of using sources in Chinese, Lie translated the biography of Confucius from the European texts. In crafting his story, Lie applied conglomerate authorship, a technique commonly practised by Malay authors. It allowed him to select, combine and appropriate the source texts. To justify that Confucius' virtue and his teaching were superb and are applicable to contemporary life, Lie borrowed and emphasized European writers’ high appraisal of Confucianism, instead of using his own arguments and opinions. I call this writing technique “indirect agency”.

  4. "Sundiata, Lion King of Mali." Adapted by Kim Hines, Featuring Griot Alhaji Papa Susso, Cue Sheet for Students.

    Science.gov (United States)

    Freeman, Aakhu TuahNera

    This performance guide is designed for teachers to use with students before and after a performance of "Sundiata: Lion King of Mali," adapted by Kim Hines and featuring Griot Alhaji Papa Susso. The guide, called a "Cuesheet," contains seven activity sheets for use in class, addressing: (1) Sundiata: Man & Myth (discusses…

  5. Kim Wŏn-haeng’s Intellectual Influences on Hong Tae-yong: The Case of Relations between

    Directory of Open Access Journals (Sweden)

    Login Lok-yin Law

    2015-08-01

    Full Text Available In the 18th century Chosŏn (1392-1910, some scholars, such as Hong Tae-yong (1731-1783 advocated that Chosŏn should learn the advantages of the Qing (1644-1912 society to reform the social structure and government of Chosŏn. The school of these advocates has been known as Pukhak by historians. The intellectual factors of the school of Pukhak’s formation and development have been overlooked by the academia of Chosŏn intellectual history. In fact, Pukhak was closely related to the idea of the school of Nakhak which believed that nature of things was equivalent to humans. Kim Wŏn-haeng, was one of the supporters of Nakhak and Hong Tae-yong was one of the students of Kim. Hong’s thought and writing exposed that his thought was profoundly influenced by Kim Wŏn-haeng. Hong was deemed to be the first prominent scholar of the Pukhak School during the 18th century Chosŏn. Hong and other scholars of Pukhak advocated learning the new knowledge from Qing China even though it was a barbarian society. Therefore, this paper will investigate the intellectual relationships between Hong Tae-yong and Kim Wŏn-haeng to reveal how intellectuals of Nakhak shaped the formation of Pukhak School and exposed the idea of learning from Qing China.

  6. Language and Family Dispersion: North Korean Linguist Kim Su-gyŏng and the Korean War

    Directory of Open Access Journals (Sweden)

    Ryuta Itagaki

    2017-03-01

    Full Text Available This article analyzes the unpublished memoir of Kim Su-gyŏng (1918–2000, a linguist who was active in North Korea from the mid-1940s until the late 1960s, and situates his account of his experience of the Korean War within the context of his linguistic essays and correspondence. In doing so, the article considers the role that the personal and the social play in language, utilizing Saussure’s theoretical framework, with which Kim himself was well versed. Kim wrote his memoirs in the 1990s to his family, from whom he had become separated during the Korean War and who now lived in Toronto. In this text, he writes in “personal” language that reveals his uncertainty and his feelings for his family, but then immediately negates these feelings through the use of “social” language, which resonates with his interpretation of the linguistic thesis that Josef Stalin developed during the Korean War on language and national identity. For Kim, the relationship between language and nation was not at all self-evident, but something that he idealized in response to the dispersal of his family. By offering a reflexive reading of a memoir written by a North Korean linguist, this article makes a breakthrough in the investigation of North Korean wartime academic history, which has not risen above the level of analyzing articles in the field of linguistics that were published at the time.

  7. Electrothermal DC characterization of GaN on Si MOS-HEMTs

    Science.gov (United States)

    Rodríguez, R.; González, B.; García, J.; Núñez, A.

    2017-11-01

    DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

  8. X-band 5-bit MMIC phase shifter with GaN HEMT technology

    Science.gov (United States)

    Sun, Pengpeng; Liu, Hui; Zhang, Zongjing; Geng, Miao; Zhang, Rong; Luo, Weijun

    2017-10-01

    The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8-12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.

  9. Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

    Directory of Open Access Journals (Sweden)

    Ronald A. Coutu

    2016-06-01

    Full Text Available The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN high electron mobility transistors (HEMT lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation is insufficient to assess lifetime at operating conditions.

  10. Analytical high frequency GaN HEMT model for noise simulations

    Science.gov (United States)

    Eshetu Muhea, Wondwosen; Mulugeta Yigletu, Fetene; Lazaro, Antonio; Iñiguez, Benjamin

    2017-12-01

    A compact high frequency model for AlGaN/GaN HEMT device valid for noise simulations is presented in this paper. The model is developed based on active transmission line approach and linear two port noise theory that makes it applicable for quasi static as well as non-quasi static device operation. The effects of channel length modulation and velocity saturation are discussed. Moreover, the effect of the gate leakage current on the noise performance of the device is investigated. It is shown that there is an apparent increase in noise generated in the device due to the gate current related shot noise. The common noise figures of merit for HFET are calculated and verified with experimental data.

  11. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

    International Nuclear Information System (INIS)

    Rodilla, H; González, T; Mateos, J; Moschetti, G; Grahn, J

    2011-01-01

    In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, n s , have been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cutoff frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of n s shifts the maximum of the transconductance and intrinsic cutoff frequency to higher values of drain current and improves the agreement with the experimental results

  12. AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

    International Nuclear Information System (INIS)

    Leclaire, P; Chenot, S; Cordier, Y; Buchaillot, L; Théron, D; Faucher, M

    2014-01-01

    In the present work, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown with very thin buffer layers on silicon substrates in view of developing nano electromechanical systems (NEMS) for sensors applications. To ensure transducer operation in the MHz range together with low mechanical stiffness, epitaxial structures with thickness below 1 μm have to be developed. We report on the evolution of the material and electrical properties of AlGaN/GaN HEMTs with thicknesses varying from 2 μm to 0.5 μm. The set of parameters obtained includes in-plane Young modulus of 250 GPa in association with carrier density of 6 × 10 12 cm −2 and mobility above 1000 cm 2  V −1  s −1 . The resulting behavior of demonstration transistors validates these epilayers for electromechanical resonators operation. (paper)

  13. Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

    Science.gov (United States)

    Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

    2015-02-01

    InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

  14. A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

    Directory of Open Access Journals (Sweden)

    Dong-Hwan Shin

    2017-10-01

    Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

  15. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

    Science.gov (United States)

    Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

    2016-12-01

    InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

  16. A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT

    Science.gov (United States)

    Nguyen, Tung The-Lam; Kim, Sam-Dong

    2017-11-01

    We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I-V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions.

  17. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

    2014-08-15

    The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

  18. Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

    Science.gov (United States)

    Kumar, Sona P.; Agrawal, Anju; Chaujar, Rishu; Gupta, Mridula; Gupta, R. S.

    2008-07-01

    A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.

  19. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d......-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.......This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time...

  20. Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

    OpenAIRE

    Mitrevski, Dragan

    2011-01-01

    In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

  1. Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure

    International Nuclear Information System (INIS)

    Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman

    2011-01-01

    Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)

  2. Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module

    International Nuclear Information System (INIS)

    Chou, Po-Chien; Cheng, Stone

    2013-01-01

    Emerging gallium nitride (GaN)-based high electron mobility transistor (HEMT) technology has the potential to make lower loss and higher power switching characteristics than those made using traditional silicon (Si) components. This work designed, developed, and tested an all-GaN-based power module. In a 200 V, 45 A module, each switching element comprises three GaN chips in parallel, each of which includes six 2.1 A AlGaN/GaN-on-Si HEMT cells. The cells are wire-bonded in parallel to scale up the power rating. Static I D -V DS characteristics of the module are experimentally obtained over widely varying base plate temperatures, and a low on-state resistance is obtained at an elevated temperature of 125 °C. The fabricated module has a blocking voltage exceeding 200 V at a reverse-leakage current density below 1 mA/mm. Two standard temperature measurements are made to provide a simple means of determining mean cell temperature in the module. Self-heating in AlGaN/GaN HEMTs is studied by electrical analysis and infrared thermography. Electrical analysis provides fast temperature overviews while infrared thermography reveals temperature behavior in selected active regions. The current distribution among cells was acceptable over the measured operating temperature range. The characterization of electrical performance and mechanical performance confirm the potential use of the packaged module for high-power applications. -- Highlights: • This work proposes the design, development, and testing of all-GaN power module. • We develop module package and determine their thermal and electrical properties. • ID-VDS characteristics are obtained over a wide range of base plate temperatures. • Self-heating in GaN HEMTs is studied by electrical analysis and IR thermography

  3. Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT

    Science.gov (United States)

    Gupta, Akriti; Chatterjee, Neel; Kumar, Pradeep; Pandey, Sujata

    2017-08-01

    In this paper, we present the effect of passivation layer on the electrical characteristics of AlGaN/GaN HEMT. The energy band diagram, drain current voltage characteristics, transconductance and cut off frequency was calculated for both long channel and short channel devices. It was found that the electrical characteristics of the device improve with the introduction of high K dielectric in the passivation layer. The results obtained agree well with the data available in literature.

  4. Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

    Directory of Open Access Journals (Sweden)

    Po-Chien Chou

    2017-02-01

    Full Text Available This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS high electron mobility transistors (HEMTs. When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions. There are three major stress conditions that include: VDS = 0 V, off, and off (cascode-connection states. Changes of direct current (DC figures of merit in voltage step-stress experiments are measured, statistics are studied, and correlations are investigated. Hot electron stress produces permanent change which can be attributed to charge trapping phenomena and the generation of deep levels or interface states. The simultaneous generation of interface (and/or bulk and buffer traps can account for the observed degradation modes and mechanisms. These findings provide several critical characteristics to evaluate the electrical reliability of GaN MIS-HEMTs which are borne out by step-stress experiments.

  5. Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

    International Nuclear Information System (INIS)

    Zhao, M.; Liu, X.Y.; Zheng, Y.K.; Li, Yankui; Ouyang, Sihua

    2013-01-01

    Highlights: ► We report the behavior of the current–voltage characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. ► The origin of the leakage current and the current transport behaviors are reported. ► There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height in homogeneities. -- Abstract: In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (R s ) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, R s , G m and Schottky leakage current values are seen to be strongly temperature dependent

  6. A STUDY OF METABOLIC SYNDROME IN PATIENTS UNDERGOING CORONARY ANGIOGRAPHY AT KIMS HOSPITAL, HUBBALLI, KARNATAKA, INDIA

    Directory of Open Access Journals (Sweden)

    Chandrashekar K

    2018-01-01

    Full Text Available BACKGROUND Coronary heart disease has become an epidemic since 20th century. Deaths due to the same are increasing of around 17.5 million deaths in year 2012. The deaths are increasing more in developing countries and metabolic syndrome is a cluster of disorders, which are promoting the development of coronary artery diseases. The disorders include central obesity, insulin resistance, dyslipidaemia and hypertension. Increasing prevalence, changing lifestyle and progression of the disease without obvious symptoms had led to increasing morbidity and mortality. The non-infectious epidemic of the century is posing great challenges to healthcare and research in development of more infrastructure and funds to prevent and treat the disease. MATERIALS AND METHODS A total of 100 patients diagnosed with CAD and posted for Coronary Angiogram (CAG in ICCU at KIMS Hospital, Hubballi, were studied over a period of one and a half year. Cases were categorised according to ATPIII and new IDF criteria for metabolic syndrome and compared. Clinical evaluation, ECG, lipid profile and 2D-echo was done. Statistical analysis done using unpaired t-test, Mann-Whitney tests, Chi-square test and Kappa statistics. RESULTS Of the total 100, 57 had metabolic syndrome by either ATP criteria or IDF criteria. Kappa=0.859 (p-value 150 mg/dL and DM or FBS >100 mg/dL (p value <0.001. The mean values of SBP (144.0 vs. 120.8, DBP (85.6 vs. 73.8 and waist circumference (95.4 vs. 87.7 was statistically significant (p value <0.01 between patients with metabolic syndrome and without metabolic syndrome with IDF criteria (p value <0.001. It was observed LAD (28.1% was the most common vessel involved individually. There was no much significance related to metabolic syndrome. Incidence of CAD was more common in patients with metabolic syndrome than other group. CONCLUSION The prevalence of metabolic syndrome was high in patients with CAD. Both metabolic syndrome definitions identify subset

  7. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Li, Baikui; Tang, Xi; Chen, Kevin J.

    2015-01-01

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

  8. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-03-02

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

  9. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

    International Nuclear Information System (INIS)

    Xie Yuanbin; Quan Si; Ma Xiaohua; Zhang Jincheng; Li Qingmin; Hao Yue

    2011-01-01

    Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs. (semiconductor integrated circuits)

  10. Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications

    International Nuclear Information System (INIS)

    Ahmed, S; Bokhari, S H; Amin, F; Khan, L A; Hussain, Z

    2013-01-01

    Ion-implanted AlGaN/GaN High Electron Mobility Transistors (HEMT) devices were studied thoroughly to look into the possibilities of enhancing efficiency for high-power and high-frequency electronic and gas sensing applications. A dedicated experimental design was created in order to study the influence of the physical parameters in response to high energy (by virtue of in-situ beam heating due to highly energetic implantation) ion implantation to the active device regions in nitride HEMT structures. Disorder or damage created in the HEMT structure was then studied carefully with electrical characterization techniques such as Hall, I-V and G-V measurements. The evolution of the electrical characteristics affecting the high-power, high-frequency and ultra-high efficiency gas sensing operations were also analyzed by subjecting the HEMT active device regions to progressive time-temperature annealing cycles. Our suggested model can also provide a functional process engineering window to control the extent of 2D Electron mobility in AlGaN/GaN HEMT devices undergoing a full cycle of thermal impact (i.e. from a desirable conductive region to a highly compensated one)

  11. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

    Science.gov (United States)

    Li, Zhonghui; Li, Chuanhao; Peng, Daqing; Zhang, Dongguo; Dong, Xun; Pan, Lei; Luo, Weike; Li, Liang; Yang, Qiankun

    2018-06-01

    Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013 cm-2, sheet resistance of about 210 Ω/□ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.

  13. Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

    Science.gov (United States)

    Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

    1991-01-01

    Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

  14. Electrical properties of AlGaN/GaN HEMTs in stretchable geometries

    Science.gov (United States)

    Tompkins, R. P.; Mahaboob, I.; Shahedipour-Sandvik, F.; Lazarus, N.

    2017-10-01

    Many biological materials are naturally soft and stretchable, far more so than crystalline semiconductors. Creating systems that can be placed directly on a surface such as human skin has required new approaches in electronic device design and materials, a field known as stretchable electronics. One common method for fabricating a highly brittle semiconductor device able to survive tens of percent strain is to incorporate stress relief structures ('waves'). Although the mechanical advantages of this approach are well known, the effects on the electrical behavior of a device such as a transistor compared to a more traditional geometry have not been studied. Here, AlGaN/GaN high electron mobility transistors (HEMTs) grown on rigid sapphire substrates were fabricated in a common wavy geometry, a sinusoid, with dimensions similar to those used in stretchable electronics. The study analyzes control parameters available to the designer including gate location along the sinusoid, angle the source-drain contacts make with the gate, as well as variation of the gate length at the peak of the sinusoid. Common electrical parameters such as saturation current density, threshold voltage, and transconductance were compared between the sinusoidal and conventional straight geometries and results found to fall to within experimental uncertainty, suggesting shifting to a stretchable geometry is possible without appreciably degrading semiconductor device performance.

  15. On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

    Science.gov (United States)

    Acurio, E.; Crupi, F.; Magnone, P.; Trojman, L.; Meneghesso, G.; Iucolano, F.

    2017-06-01

    This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a universal decreasing behavior as a function of the number of filled traps, independently of stress time, stress voltage, stress temperature, and device-to-device variability. The stress-induced ΔVth can be fully recovered by applying a small negative voltage, which causes the electron de-trapping. In the explored time window (between 1 s and thousands of s), the recovery dynamics is well described by the superimposition of two exponential functions associated with two different traps. Both trap time constants are independent of the stress voltage, decrease with temperature and increase with the recovery voltage. The activation energy of the slower trap is 0.93 eV, while the faster trap exhibits an activation energy with a large spread in the range between 0.45 eV and 0.82 eV.

  16. Demonstration of an RF front-end based on GaN HEMT technology

    Science.gov (United States)

    Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

    2017-05-01

    The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

  17. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Bougrioua, Z.; Lorenzini, P. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); Azize, M. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France); Jimenez, A. [E. Politecnica. Universidad de Alcala, 28871 Alcala de Henares (Spain); Brana, A.F.; Munoz, E. [ETSI Telecomunicacion, UPM, 28040 Madrid (Spain); Beaumont, B.; Gibart, P. [LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France)

    2005-05-01

    Highly resistive GaN (>10{sup 8} {omega}{sub {upsilon}}) is grown by MOVPE on sapphire with dislocation density in the range 10{sup 8} to 8 x 10{sup 8} cm{sup -2}, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm{sup 2}/V/s at n{sub s}{proportional_to}7.6 x 10{sup 12} cm{sup -2}. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I{sub DS}{sup max}=1.28 A/mm, g{sub m}{sup max} {proportional_to}290 mS/mm and f{sub T} {proportional_to}23 GHz were measured for 0.2 {mu}m transistors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs

    International Nuclear Information System (INIS)

    Zhong Yinghui; Zhang Yuming; Wang Xiantai; Su Yongbo; Cao Yuxiong; Jin Zhi; Liu Xinyu

    2012-01-01

    We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz. The characteristics of HEMTs with side-etched region lengths (L side ) of 300, 412 and 1070 nm were analyzed. With the increase in L side , the kink effect became notable in the DC characteristics, which resulted from the surface state and the effect of impact ionization. The kink effect was qualitatively explained through energy band diagrams, and then eased off by reducing the L side . Meanwhile, the L side dependence of the radio frequency characteristics, which were influenced by the parasitic capacitance, as well as the parasitic resistance of the source and drain, was studied. This work will be of great importance in fabricating high-performance InP HEMTs. (semiconductor devices)

  19. I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

    Science.gov (United States)

    Lang, A. C.; Hart, J. L.; Wen, J. G.; Miller, D. J.; Meyer, D. J.; Taheri, M. L.

    2016-09-01

    Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.

  20. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN HEMT channel

    Science.gov (United States)

    Mikhailovich, S. V.; Galiev, R. R.; Zuev, A. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Khabibullin, R. A.

    2017-08-01

    Field-effect high-electron-mobility transistors (HEMTs) based on AlGaN/AlN/GaN heterostructures with various gate lengths L g have been studied. The maximum values of current and power gaincutoff frequencies ( f T and f max, respectively) amounted to 88 and 155 GHz for HEMTs with L g = 125 nm, while those for the transistors with L g = 360 nm were 26 and 82 GHz, respectively. Based on the measured S-parameters, the values of elements in small-signal equivalent schemes of AlGaN/AlN/GaN HEMTs were extracted and the dependence of electron-injection velocity vinj on the gate-drain voltage was determined. The influence of L g and the drain-source voltage on vinj has been studied.

  1. Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

    International Nuclear Information System (INIS)

    Lenka, T. R.; Panda, A. K.

    2011-01-01

    Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

  2. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

    Science.gov (United States)

    Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L.; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

    2016-01-01

    We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time. PMID:26907298

  3. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

    Directory of Open Access Journals (Sweden)

    Yacine Halfaya

    2016-02-01

    Full Text Available We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO 2 and 15 ppm-NH 3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

  4. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Tikhomirov, V. G., E-mail: VV11111@yandex.ru [Saint Petersburg Electrotechnical University “LETI” (Russian Federation); Zemlyakov, V. E.; Volkov, V. V.; Parnes, Ya. M.; Vyuginov, V. N. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Cherkashin, N. A. [CEMES-CNRS-Université de Toulouse (France); Mizerov, M. N. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-02-15

    The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

  5. Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2017-02-01

    In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

  6. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  7. Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

    Directory of Open Access Journals (Sweden)

    Taizoh Sadoh

    2011-03-01

    Full Text Available The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  8. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

    2011-01-01

    The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, V(DS) = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  9. Report on visit from Prof. Kim Lutzen: Friday, 6 November 1998, Korolinska Institute (dept of nursing Stockholm, Sweden

    Directory of Open Access Journals (Sweden)

    Kim Lutzen

    1999-10-01

    Full Text Available Prof. Kim Lutzen contacted the Department of Advanced Nursing Sciences, Unisa, via the Department's Web Page. Prof. Lutzen is the Chair of the Department of Nursing, which offers undergraduate, master and doctoral programmes. This Department of Nursing is situated within the Karolinska Institute, which comprises 29 Departments of Health Sciences, including a number of Medical Departments, Dentistry, Occupational Therapy, Physiotherapy, and Nursing. Prof. Lutzen emphasised that there is no Swedish phrase similar to "nursing science", consequently this t e n seems to be somewhat unfamiliar to the Swedish nurses. *Please note: This is a reduced version of the abstract. Please refer to PDF for full text.

  10. The complete larval development of Eurypanopeus canalensis Abele and Kim, 1989 (Crustacea: Brachyura: Panopeidae described from laboratory reared material

    Directory of Open Access Journals (Sweden)

    Marcelo U. García-Guerrero

    2005-09-01

    Full Text Available The estuarine panopeid crab Eurypanopeus canalensis Abele and Kim, 1989, is an eastern tropical Pacific species with a known distribution from the southeastern Gulf of California, Mexico, to Panama. Its complete larval development is fully described and illustrated from laboratory-reared material. The four zoeal stages and the megalopa are compared with two congeneric species from the West Atlantic, E. abbreviatus (Stimpson, 1860 and E. depressus (Smith, 1869. The main differences between larvae of E. canalensis and those of these two species include telson setation and the presence/absence of a stout hook-like spine in the megalopae cheliped ischium.

  11. An Inquiry of Intentions in Kim Hye-yong's 'First Meeting': A North Korean Short Story in Korea Today (2007).

    OpenAIRE

    Alzo David-West

    2013-01-01

    This paper examines the problem of the intentional fallacy in the North Korean short story 'First Meeting' by Kim Hye-yong. Serially published in Korea Today in 2007, the nationalist allegory centres on Shin Ch'ong-mi, a young female journalist in Pyongyang, who falls in love with her penfriend Song-u, a soldier in the Korean People's Army, and struggles to remain devoted to him when he suddenly stops writing. With the literary-critical method of counterintuitive reading, the inquiry analyses...

  12. Teasing out the compressed education debates in contemporary South Korea: Media portrayal of figure skater Yuna Kim

    OpenAIRE

    Kim, Hye Jin

    2013-01-01

    In this thesis, I argue that the heated debates about South Korea’s education policy consist of problems that arise from different genres of discourses that in turn belong to different historical moments and education values. I engage in a media discourse analysis of the reportage on South Korean international sport celebrity Yuna Kim that highlight the key education debates currently taking place in South Korea. First, I deal with the neologism umchinttal (my mom’s friend’s daughter) as an i...

  13. The Expression of the Femininity and Imperialism : Through comparison study of works of Toshiko Tamura and Myung-soon Kim

    OpenAIRE

    金, 玟妵

    2005-01-01

    Toshiko Tamura and Myung-soon Kim flourished in 1910-20 in Japan and Korea. In those days it was an act of a man to write. The feminine was demanded above all to the thing which a woman wrote by the literary world and the society, so that woman does not invade a domain of a man. A lot of studies about that the motherhood is one of a model of feminine, it was used to mobilize a woman for war, while militarism advances. Then is what kind of position was there the femininity at socially and cult...

  14. New Nordic Exceptionalism: Jeuno JE Kim and Ewa Einhorn's The United Nations of Norden and other realist utopias

    Directory of Open Access Journals (Sweden)

    Mathias Danbolt

    2016-11-01

    Full Text Available At the 2009 Nordic Culture Forum summit in Berlin that centered on the profiling and branding of the Nordic region in a globalized world, one presenter stood out from the crowd. The lobbyist Annika Sigurdardottir delivered a speech that called for the establishment of “The United Nations of Norden”: A Nordic union that would gather the nations and restore Norden's role as the “moral superpower of the world.” Sigurdardottir's presentation generated such a heated debate that the organizers had to intervene and reveal that the speech was a performance made by the artists Jeuno JE Kim and Ewa Einhorn. This article takes Kim and Einhorn's intervention as a starting point for a critical discussion of the history and politics of Nordic image-building. The article suggests that the reason Kim and Einhorn's speech passed as a serious proposal was due to its meticulous mimicking of two discursive formations that have been central to the debates on the branding of Nordicity over the last decades: on the one hand, the discourse of “Nordic exceptionalism,” that since the 1960s has been central to the promotion of a Nordic political, socio-economic, and internationalist “third way” model, and, on the other hand, the discourse on the “New Nordic,” that emerged out of the New Nordic Food-movement in the early 2000s, and which has given art and culture a privileged role in the international re-fashioning of the Nordic brand. Through an analysis of Kim and Einhorn's United Nations of Norden (UNN-performance, the article examines the historical development and ideological underpinnings of the image of Nordic unity at play in the discourses of Nordic exceptionalism and the New Nordic. By focusing on how the UNN-project puts pressure on the role of utopian imaginaries in the construction of Nordic self-images, the article describes the emergence of a discursive framework of New Nordic Exceptionalism.

  15. Validation Study of Kim's Sham Needle by Measuring Facial Temperature: An N-of-1 Randomized Double-Blind Placebo-Controlled Clinical Trial

    Directory of Open Access Journals (Sweden)

    Sanghun Lee

    2012-01-01

    Full Text Available Introduction. In 2008, Kim's sham needle was developed to improve the quality of double-blinded studies. The aim of this study is to validate Kim's sham needle by measuring facial temperature. Methods. We designed “N-of-1” trials involving 7 smokers. One session was composed of 2 stimulations separated by a 2 h washout period. Six sessions were applied daily for all subjects. Infrared thermal imaging was used to examine the effects of acupuncture (HT8, KI2 on facial temperature following smoking-induced decrease. Results. All subjects demonstrated decreased temperatures after sham needle treatment, but 5 of the 7 subjects showed increased temperatures after real needle treatment. 6 of the 7 subjects showed a significant difference (P<0.05 between treatments with real and sham needles. Thus, the physiological stimulation of Kim's sham needle is different from that of a real needle, suggesting that Kim's sham needle is a potential inactive control intervention.

  16. Muusikauudised : Lu : k ja Jäääär koos laval. Britney Spears tegutseb. Lenny Kravitz ja Mick Jagger. Kim Wilde

    Index Scriptorium Estoniae

    2001-01-01

    Tartus Sõbra majas toimunud kontserdist. Videost "Britney: The video". Heliplaatidest: "Britney", "The Best of Pink Floyd", "Lenny", Mick Jagger "Goddess In The Doorway", "The Very Best Of Kim Wilde"

  17. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

    Science.gov (United States)

    Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

    2017-11-01

    As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

  18. Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

    Directory of Open Access Journals (Sweden)

    Deepthi Nagulapally

    2015-01-01

    Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  19. Characterization and Modeling I(V of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN

    Directory of Open Access Journals (Sweden)

    N. Benyahya

    2014-05-01

    Full Text Available In this paper, we have studied the Schottky contact of Ni/Au/AlInN/GaN HEMTs. The current–voltage Igs (Vgs of Ni/Au/AlInN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3, barrier height (0.72 eV and series resistance (33 W were evaluated from I(V data, the threshold voltage (-2.42 V, the 2D gas density (1.35 ´ 1013 cm-2 and barrier height (0.94 eV were evaluated from C(V data.

  20. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

    Science.gov (United States)

    Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

    2017-11-01

    As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

  1. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K; Transistor balistique quantique et HEMT bas-bruit pour la cryoelectronique inferieure a 4.2 K

    Energy Technology Data Exchange (ETDEWEB)

    Gremion, E

    2008-01-15

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 {mu}W. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/{radical}(Hz) at 1 kHz and 0.12 nV/{radical}(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  2. Endogenous Tim-1 (Kim-1) promotes T-cell responses and cell-mediated injury in experimental crescentic glomerulonephritis.

    Science.gov (United States)

    Nozaki, Yuji; Nikolic-Paterson, David J; Snelgrove, Sarah L; Akiba, Hisaya; Yagita, Hideo; Holdsworth, Stephen R; Kitching, A Richard

    2012-05-01

    The T-cell immunoglobulin mucin 1 (Tim-1) modulates CD4(+) T-cell responses and is also expressed by damaged proximal tubules in the kidney where it is known as kidney injury molecule-1 (Kim-1). We sought to define the role of endogenous Tim-1 in experimental T-cell-mediated glomerulonephritis induced by sheep anti-mouse glomerular basement membrane globulin acting as a planted foreign antigen. Tim-1 is expressed by infiltrating activated CD4(+) cells in this model, and we studied the effects of an inhibitory anti-Tim-1 antibody (RMT1-10) on immune responses and glomerular disease. Crescentic glomerulonephritis, proliferative injury, and leukocyte accumulation were attenuated following treatment with anti-Tim-1 antibodies, but interstitial foxp3(+) cell accumulation and interleukin-10 mRNA were increased. T-cell proliferation and apoptosis decreased in the immune system along with a selective reduction in Th1 and Th17 cellular responses both in the immune system and within the kidney. The urinary excretion and renal expression of Kim-1 was reduced by anti-Tim-1 antibodies reflecting diminished interstitial injury. The effects of anti-Tim-1 antibodies were not apparent in the early phase of renal injury, when the immune response to sheep globulin was developing. Thus, endogenous Tim-1 promotes Th1 and Th17 nephritogenic immune responses and its neutralization reduces renal injury while limiting inflammation in cell-mediated glomerulonephritis.

  3. Viscous flux flow velocity and stress distribution in the Kim model of a long rectangular slab superconductor

    Science.gov (United States)

    Yang, Yong; Chai, Xueguang

    2018-05-01

    When a bulk superconductor endures the magnetization process, enormous mechanical stresses are imposed on the bulk, which often leads to cracking. In the present work, we aim to resolve the viscous flux flow velocity υ 0/w, i.e. υ 0 (because w is a constant) and the stress distribution in a long rectangular slab superconductor for the decreasing external magnetic field (B a ) after zero-field cooling (ZFC) and field cooling (FC) using the Kim model and viscous flux flow equation simultaneously. The viscous flux flow velocity υ 0/w and the magnetic field B* at which the body forces point away in all of the slab volumes during B a reduction, are determined by both B a and the decreasing rate (db a /dt) of the external magnetic field normalized by the full penetration field B p . In previous studies, υ 0/w obtained by the Bean model with viscous flux flow is only determined by db a /dt, and the field B* that is derived only from the Kim model is a positive constant when the maximum external magnetic field is chosen. This means that the findings in this paper have more physical contents than the previous results. The field B* stress changing with decreasing field B a after ZFC if B* ≤ 0. The effect of db a /dt on the stress is significant in the cases of both ZFC and FC.

  4. Helen Kim as New Woman and Collaborator: A Comprehensive Assessment of Korean Collaboration under Japanese Colonial Rule

    Directory of Open Access Journals (Sweden)

    AhRan Ellie Bae

    2017-02-01

    Full Text Available Although almost seventy years has passed since Korea's liberation from Japanese rule, the issue of collaboration still haunts Korea today. Attempts to resolve this issue have tended to focus attention on the traitorous actions of "collaborators" without considering the gray areas that surround their actions such as the circumstances that influenced the accused to commit their alleged traitorous acts and the intentions that drove their decisions. Helen Kim, as a "new woman" and an educator, valued the necessity of providing education for women. Yet, her efforts to realize this goal, to the contrary, forced her into actions that would later be used to construct a reputation as a Japanese collaborator. Korea's nationalist historiography has a tendency to polarize this issue by categorizing a "collaborator" as either a traitor or a patriot. However, when we take a closer look at these collaborators' lives, we discover that most collaboration happened in gray areas where it is often difficult to clearly draw a line between treason and collaboration. Helen Kim's case suggests that the issue of collaboration cannot be fully explained by nationalist historiography's framework and we must give attention to these gray areas. Through her story I hope to complicate the issue of collaboration by raising questions that address the gray areas that surround the actions of "collaborators." In doing so, I hope to challenge the nationalist historiography's propensity to oversimplify this issue and present a more nuanced understanding of it.

  5. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2017-12-01

    Full Text Available In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS, no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  6. Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

    Science.gov (United States)

    Majumdar, Shubhankar; Das, S.; Biswas, D.

    2015-08-01

    Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

  7. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K

    International Nuclear Information System (INIS)

    Gremion, E.

    2008-01-01

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/√(Hz) at 1 kHz and 0.12 nV/√(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  8. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Zhang Guangchen; Feng Shiwei; Li Jingwan; Guo Chunsheng; Zhao Yan

    2012-01-01

    Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm −1 is achieved, corresponding to a temperature accuracy of ±3.2 °C for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8 °C/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally. (semiconductor devices)

  9. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Greenlee, Jordan D.; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D.; Specht, Petra; Dubon, Oscar D.; Luysberg, Martina; Weatherford, Todd R.

    2015-01-01

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10 14 H + /cm 2 , the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively

  10. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375 (United States); Specht, Petra; Dubon, Oscar D. [University of California at Berkeley, Berkeley, California 94720 (United States); Luysberg, Martina [ERC, Research Center Juelich GmbH, 52425 Juelich (Germany); Weatherford, Todd R. [Naval Postgraduate School, Monterey, California 93943 (United States)

    2015-08-24

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

  11. Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

    Science.gov (United States)

    Liu, Hui; Zhang, Zongjing; Luo, Weijun

    2018-06-01

    The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

  12. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Science.gov (United States)

    Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

    2017-12-01

    In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  13. Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

    NARCIS (Netherlands)

    Karouta, F.; Krämer, M.C.J.C.M.; Kwaspen, J.J.M.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.H.; Timmering, E.C.; Smit, M.K.; Wang, J.; Shiojima, K.

    2008-01-01

    We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of

  14. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

    National Research Council Canada - National Science Library

    Fitch, R

    2002-01-01

    Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs...

  15. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  16. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

    International Nuclear Information System (INIS)

    Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

    2015-01-01

    A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

  17. Characterization of 0.18- μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing

    Science.gov (United States)

    Yoon, Hyung Sup; Min, Byoung-Gue; Lee, Jong Min; Kang, Dong Min; Ahn, Ho Kyun; Cho, Kyu-Jun; Do, Jae-Won; Shin, Min Jeong; Jung, Hyun-Wook; Kim, Sung Il; Kim, Hae Cheon; Lim, Jong Won

    2017-09-01

    We fabricated a 0.18- μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance ( g m ) of 345 mS/mm, and a threshold voltage ( V th ) of -2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency ( f T ) of 48 GHz and a maximum oscillation frequency ( f max ) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.

  18. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

    International Nuclear Information System (INIS)

    Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

    2012-01-01

    In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications. (interdisciplinary physics and related areas of science and technology)

  19. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Wu, Yu-Sheng; Lee, Ching-Sung; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al 2 O 3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (I DSS : 337.6 mA mm −1  → 462.9 mA mm −1 ), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BV GD : −103.8 V → −183.5 V), unity-gain cut-off frequency (f T : 11.3 GHz → 17.7 GHz), maximum oscillation frequency (f max : 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring f T and f max of the studied MOS-HEMT (Schottky-gate HEMT) are V GS  = −2.5 (−2) V and V DS  = 7 V. The corresponding V GS and V DS biases are −2.5 (−2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C–V) hysteresis is obtained in the Al 2 O 3 -MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300–480 K are also studied. (paper)

  20. An Inquiry of Intentions in Kim Hye-yong's 'First Meeting': A North Korean Short Story in Korea Today (2007.

    Directory of Open Access Journals (Sweden)

    Alzo David-West

    2013-11-01

    Full Text Available This paper examines the problem of the intentional fallacy in the North Korean short story 'First Meeting' by Kim Hye-yong. Serially published in Korea Today in 2007, the nationalist allegory centres on Shin Ch'ong-mi, a young female journalist in Pyongyang, who falls in love with her penfriend Song-u, a soldier in the Korean People's Army, and struggles to remain devoted to him when he suddenly stops writing. With the literary-critical method of counterintuitive reading, the inquiry analyses the structural relations of the narrative, its discourse on desire, its apparent intentions, and its contravening elements, revealing an incidental unstable narrative that is symbolically protesting of the moral of the story to affectionately embrace the political authority of the North Korean party-army regime in the military-first (songun era.

  1. Cooling Simulation and Thermal Abuse Modeling of Lithium-Ion Batteries Using the Newman, Tiedemann, Gu, and Kim (NTGK) Model

    DEFF Research Database (Denmark)

    Saeed Madani, Seyed; Swierczynski, Maciej Jozef; Kær, Søren Knudsen

    2017-01-01

    This paper gives insight into the cooling simulation and thermal abuse modeling of lithium-ion batteries by ANSYS FLUENT. Cooling strategies are important issues in the thermal management of lithium-ion battery systems, and it is essential to investigate them attentively in order to maintain...... the functioning temperature of batteries within an optimum range. The high temperature is able not only to decrease the efficiency of batteries but also may lead to the thermal runaway. To comprehend further, the thermal abuse behavior of lithium-ion batteries based on The Newman, Tiedemann, Gu, and Kim (NTGK......) model has been implemented in ANSYS FLUENT software. The results show that to achieve an optimum energy consumption for battery cooling, a minimum value of average heat transfer coefficient can be selected in order to keep the functioning temperature of batteries within an optimum range....

  2. Urinary KIM-1, NGAL and L-FABP for the diagnosis of AKI in patients with acute coronary syndrome or heart failure undergoing coronary angiography.

    Science.gov (United States)

    Torregrosa, Isidro; Montoliu, Carmina; Urios, Amparo; Andrés-Costa, María Jesús; Giménez-Garzó, Carla; Juan, Isabel; Puchades, María Jesús; Blasco, María Luisa; Carratalá, Arturo; Sanjuán, Rafael; Miguel, Alfonso

    2015-11-01

    Acute kidney injury (AKI) is a common complication after coronary angiography. Early biomarkers of this disease are needed since increase in serum creatinine levels is a late marker. To assess the usefulness of urinary kidney injury molecule-1 (uKIM-1), neutrophil gelatinase-associated lipocalin (uNGAL) and liver-type fatty acid-binding protein (uL-FABP) for early detection of AKI in these patients, comparing their performance with another group of cardiac surgery patients. Biomarkers were measured in 193 patients, 12 h after intervention. In the ROC analysis, AUC for KIM-1, NGAL and L-FABP was 0.713, 0.958 and 0.642, respectively, in the coronary angiography group, and 0.716, 0.916 and 0.743 in the cardiac surgery group. Urinary KIM-1 12 h after intervention is predictive of AKI in adult patients undergoing coronary angiography, but NGAL shows higher sensitivity and specificity. L-FABP provides inferior discrimination for AKI than KIM-1 or NGAL in contrast to its performance after cardiac surgery. This is the first study showing the predictive capacity of KIM-1 for AKI after coronary angiography. Further studies are still needed to answer relevant questions about the clinical utility of biomarkers for AKI in different clinical settings.

  3. Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio

    International Nuclear Information System (INIS)

    Bhattacharjee, A.; Lenka, T. R.

    2014-01-01

    We propose a new structure of In x Al 1−x N/GaN high electron mobility transistor (HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved as −0.472 V. In this device the InAlN barrier layer is intentionally n-doped to boost the I ON /I OFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an I ON = 10 −4.3 A and a very low I OFF = 10 −14.4 A resulting in an I ON /I OFF ratio of 10 10.1 . We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost 10 5 times better I ON /I OFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C–V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability. (semiconductor devices)

  4. Procjena citomorfologije, HPV statusa i HPV 16 genotipa u predikciji ishoda bolesti kod pacijentica s citološkim nalazom ASCUS i LSIL

    OpenAIRE

    Vrdoljak-Mozetič, Danijela; Štemberger-Papić, Snježana; Verša Ostojić, Damjana; Rubeša-Mihaljević, Roberta; Dinter, Morana; Brnčić-Fischer, Alemka; Krašević, Maja

    2016-01-01

    Cilj: Istražiti međusobnu povezanost i prognostički značaj HPV statusa (humani papiloma-virus), HPV 16 genotipa i citomorfologije kod pacijentica s citološkim nalazom abnormalnih stanica pločastog epitela vrata maternice graničnog i blagog stupnja. Materijali i metode: U studiju su uključene pacijentice s inicijalnim citološkim nalazom vrata maternice atipičnih skvamoznih stanica neodređenog značenja (ASCUS, N = 160) i skvamozne intraepitelne lezije niskog stupnja (LSIL, N = 155). Analizirane...

  5. Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

    International Nuclear Information System (INIS)

    Pu Yan; Pang Lei; Wang Liang; Chen Xiaojuan; Li Chengzhan; Liu Xinyu

    2009-01-01

    The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in large-signal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract R g . In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and f T and f max can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz. (semiconductor devices)

  6. Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

    International Nuclear Information System (INIS)

    Zaidi, Z H; Lee, K B; Qian, H; Jiang, S; Houston, P A; Guiney, I; Wallis, D J; Humphreys, C J

    2015-01-01

    We have demonstrated enhancement mode operation of AlInN/GaN (MIS)HEMTs on Si substrates using the fluorine treatment technique. The plasma RF power and treatment time was optimized to prevent the penetration of the fluorine into the channel region to maintain high channel conductivity and transconductance. An analysis of the threshold voltage was carried out which defined the requirement for the fluorine sheet concentration to exceed the charge at the dielectric/AlInN interface to achieve an increase in the positive threshold voltage after deposition of the dielectric. This illustrates the importance of control of both the plasma conditions and the interfacial charge for a reproducible threshold voltage. A positive threshold voltage of +3 V was achieved with a maximum drain current of 367 mA mm −1 at a forward gate bias of 10 V. (paper)

  7. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  8. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Directory of Open Access Journals (Sweden)

    Chandan Sharma

    2017-08-01

    Full Text Available This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  9. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Science.gov (United States)

    Sharma, Chandan; Laishram, Robert; Amit, Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

    2017-08-01

    This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  10. KIM, Steady-State Transport for Fixed Source in 2-D Thermal Reactor by Monte-Carlo

    International Nuclear Information System (INIS)

    Cupini, E.; De Matteis, A.; Simonini, R.

    1980-01-01

    1 - Description of problem or function: KIM (K-infinite Monte Carlo) is a program which solves the steady-state linear transport equation for a fixed-source problem (or, by successive fixed-source runs, for the eigenvalue problem) in a two-dimensional infinite thermal reactor lattice. The main quantities computed in some broad energy groups are the following: - Fluxes and cross sections averaged over the region (i.e. a space portion that can be unconnected but contains everywhere the same homogeneous material), grouping of regions, the whole element. - Average absorption and fission rates per nuclide. - Average flux, absorption and production distributions versus energy. 2 - Method of solution: Monte Carlo simulation is used by tracing particle histories from fission birth down through the resonance region until absorption in the thermal range. The program is organised in three sections for fast, epithermal and thermal simulation, respectively; each section implements a particular model for both numerical techniques and cross section representation (energy groups in the fast section, groups or resonance parameters in the epithermal section, points in the thermal section). During slowing down (energy above 1 eV) nuclei are considered as stationary, with the exception of some resonance nuclei whose spacing between resonances is much greater than the resonance width. The Doppler broadening of s-wave resonances of these nuclides is taken into account by computing cross sections at the current neutron energy and at the temperature of the nucleus hit. During thermalization (energy below 1 eV) the thermal motion of some nuclides is also considered, by exploiting scattering kernels provided by the library for light water, heavy water and oxygen at several temperatures. KIM includes splitting and Russian roulette. A characteristic feature of the program is its approach to the lattice geometry. In fact, besides the usual continuous treatment of the geometry using the well

  11. Kim Magrini | NREL

    Science.gov (United States)

    System Control software Education Ph.D., Physical Chemistry, University of Colorado at Boulder, 1984-1989 But Converges During Decomposition-Transformation," Soil Biology and Biochemistry (2013) " Catalytic Conditioning of Biomass-Derived Syngas," Topics in Catalysis (2012) "Transformation of

  12. Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

    International Nuclear Information System (INIS)

    Lee, K B; Green, R T; Houston, P A; Tan, W S; Uren, M J; Wallis, D J; Martin, T

    2010-01-01

    Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation

  13. Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

    International Nuclear Information System (INIS)

    Pongthavornkamol Tiwat; Pang Lei; Yuan Ting-Ting; Liu Xin-Yu

    2014-01-01

    A new modified Angelov current—voltage characteristic model equation is proposed to improve the drain—source current (I ds ) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain—source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V gs = −3.5 V, V ds = 30 V with a frequency of 9.6 GHz are presented. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

    International Nuclear Information System (INIS)

    Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

    1990-01-01

    The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

  15. Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

    Science.gov (United States)

    Freeman, Jon C.

    2004-01-01

    A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

  16. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  17. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

    2012-01-01

    Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

  18. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

    2010-12-15

    In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

  19. Reduction of proteinuria in adriamycin-induced nephropathy is associated with reduction of renal kidney injury molecule (Kim-1) over time

    NARCIS (Netherlands)

    Kramer, Andrea B.; van Timmeren, Mirjan M.; Schuurs, Theo A.; Vaidya, Vishal S.; Bonventre, Joseph V.; van Goor, Harry; Navis, Gerjan

    Kramer AB, van Timmeren MM, Schuurs TA, Vaidya VS, Bonventre JV, van Goor H, Navis G. Reduction of proteinuria in adriamycin-induced nephropathy is associated with reduction of renal kidney injury molecule (Kim-1) over time. Am J Physiol Renal Physiol 296: F1136-F1145, 2009. First published February

  20. Evaluation of a commercially available ELISA kit for quantifying imidacloprid residues in Erthrina sandwicensis leaves for management of the Erythrina gall wasp, Quadrastichus erythrinae Kim.

    Science.gov (United States)

    Joseph Fischer; Brian Strom; Sheri Smith

    2009-01-01

    The erythrina gall wasp (EGW), Quadrastichus erythrinae Kim 2004, was first detected in Hawaii in 2005 and has been infesting and killing Erythrina trees throughout the island chain since. It is believed EGW originated from Africa (Messing et al. 2009). Its host range appears to be limited to Erythrina; its...

  1. The trouble with halos: invited commentary on Kim, S., & Harris, P. L. (2014). Children prefer to learn from mind-readers. British Journal of Developmental Psychology.

    Science.gov (United States)

    Richert, Rebekah A

    2014-11-01

    This commentary on Kim and Harris (2014) addresses the authors' interpretation of the halo effect, in which 5- to 6-year-old children preferentially agreed with an informant who could read other people's minds, regardless of domain of knowledge. © 2014 The British Psychological Society.

  2. Understanding internal backgrounds in NaI(Tl) crystals toward a 200 kg array for the KIMS-NaI experiment

    Energy Technology Data Exchange (ETDEWEB)

    Adhikari, P.; Adhikari, G.; Oh, S.Y. [Sejong University, Department of Physics, Seoul (Korea, Republic of); Choi, S.; Joo, H.W.; Kim, K.W.; Kim, S.K. [Seoul National University, Department of Physics and Astronomy, Seoul (Korea, Republic of); Ha, C.; Jeon, E.J.; Kang, W.G.; Kim, H.O.; Kim, N.Y.; Lee, H.S.; Lee, J.H.; Lee, M.H.; Leonard, D.S.; Li, J.; Olsen, S.L.; Park, H.K.; Park, K.S.; So, J.H.; Yoon, Y.S. [Institute for Basic Science, Center for Underground Physics, Daejeon (Korea, Republic of); Hahn, I.S. [Ewha Womans University, Department of Science Education, Seoul (Korea, Republic of); Kim, H.J. [Kyungpook National University, Department of Physics, Daegu (Korea, Republic of); Kim, Y.D. [Sejong University, Department of Physics, Seoul (Korea, Republic of); Institute for Basic Science, Center for Underground Physics, Daejeon (Korea, Republic of); Kim, Y.H. [Institute for Basic Science, Center for Underground Physics, Daejeon (Korea, Republic of); Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of); Park, H.S. [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)

    2016-04-15

    The Korea Invisible Mass Search (KIMS) collaboration has developed low-background NaI(Tl) crystals that are suitable for the direct detection of WIMP dark matter. Building on experience accumulated during the KIMS-CsI programs, the KIMS-NaI experiment will consist of a 200 kg NaI(Tl) crystal array surrounded by layers of shielding structures and will be operated at the Yangyang underground laboratory. The goal is to provide an unambiguous test of the DAMA/LIBRA annual modulation signature. Measurements of six prototype crystals show progress in the reduction of internal contamination from radioisotopes. Based on our understanding of these measurements, we expect to achieve a background level in the final detector configuration that is less than 1 count/day/keV/kg for recoil energies around 2 keV. The annual modulation sensitivity for the KIMS-NaI experiment shows that an unambiguous 7σ test of the DAMA/LIBRA signature would be possible with a 600 kg year exposure with this system. (orig.)

  3. Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

    Science.gov (United States)

    Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

    2017-08-01

    In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

  4. A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT

    NARCIS (Netherlands)

    Maas, A.M.P.; Vliet, F.E. van

    2005-01-01

    A low-noise X-band microstrip hybrid VCO has been designed and realised using a 2 × 50 μm GaN-on-SiC pseudo-morphic HEMT as the active device. The transistor has been manufactured by TIGER and features a gate-length of 0.15 μm, an fT of 22 GHz, a break-down voltage of 42 Volts and an Idss, close to

  5. Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

    2016-01-01

    This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

  6. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  7. Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si3N4 passivation

    International Nuclear Information System (INIS)

    Tomosh, K. N.; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P.

    2016-01-01

    The optimum mode of the in situ plasma-chemical etching of a Si 3 N 4 passivating layer in C 3 F 8 /O 2 medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si 3 N 4 growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si 3 N 4 slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si 3 N 4 than without it.

  8. Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

    International Nuclear Information System (INIS)

    Singh, Sarab Preet; Liu, Yi; Ngoo, Yi Jie; Kyaw, Lwin Min; Bera, Milan Kumar; Chor, Eng Fong; Dolmanan, S B; Tripathy, Sudhiranjan

    2015-01-01

    The influence of plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) passivation film thickness on In 0.18 Al 0.82 N/GaN/Si heterostructures and HEMTs has been investigated. The formation of Si 3 N 4 was confirmed by x-ray photoelectron spectroscopy (XPS) measurements. X-ray reflectivity (XRR) measurements reveal that both the density and roughness of the SiN x film increase with increasing film thickness. With an increase in SiN x film thickness, a significant increase in two-dimensional electron gas (2DEG) density, drain current, extrinsic transconductance and negative threshold voltage shift of the In 0.18 Al 0.82 /GaN/Si HEMTs are observed. An optimal thickness of SiN x is ∼100 nm and it yields a substantial increase in 2DEG density (∼30%) with a minimum sheet resistance for In 0.18 Al 0.82 N/GaN/Si heterostructures. Furthermore, we correlate the observed SiN x film thickness-dependent electrical characteristics of In 0.18 Al 0.82 /GaN/Si HEMTs with the density of the SiN x film. (paper)

  9. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.

    Science.gov (United States)

    Heo, Jun-Woo; Kim, Young-Jin; Kim, Hyun-Seok

    2014-12-01

    We report two approaches to fabricating high performance normally-off AIGaN/GaN high-electron mobility transistors (HEMTs). The fabrication techniques employed were based on recessed-metal-insulator-semiconductor (MIS) gate and recessed fluoride-based plasma treatment. They were selectively applied to the area under the gate electrode to deplete the two-dimensional electron gas (2-DEG) density. We found that the recessed gate structure was effective in shifting the threshold voltage by controlling the etching depth of gate region to reduce the AIGaN layer thickness to less than 8 nm. Likewise, the CF4 plasma treatment effectively incorporated negatively charged fluorine ions into the thin AIGaN barrier so that the threshold voltage shifted to higher positive values. In addition to the increased threshold voltage, experimental results showed a maximum drain current and a maximum transconductance of 315 mA/mm and 100 mS/mm, respectively, for the recessed-MIS gate HEMT, and 340 mA/mm and 330 mS/mm, respectively, for the fluoride-based plasma treated HEMT.

  10. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

    Science.gov (United States)

    Nigam, Adarsh; Bhat, Thirumaleshwara N.; Rajamani, Saravanan; Dolmanan, Surani Bin; Tripathy, Sudhiranjan; Kumar, Mahesh

    2017-08-01

    In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ˜1270cm2/Vs, ˜2×1013 cm-2 and ˜0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  11. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

    2016-01-01

    A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

  12. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.

    2017-08-01

    The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

  13. Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Horio, Kazushige; Nakajima, Atsushi; Itagaki, Keiichi

    2009-01-01

    A two-dimensional transient analysis of field-plate GaN MESFETs and AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current–voltage curves are derived from them. How the existence of a field plate affects buffer-related drain lag, gate lag and current collapse is studied. It is shown that in both MESFET and HEMT, the drain lag is reduced by introducing a field plate because electron injection into the buffer layer is weakened by it, and the buffer-trapping effects are reduced. It is also shown that the field plate could reduce buffer-related current collapse and gate lag in the FETs. The dependence of lag phenomena and current collapse on the field-plate length and on the SiN passivation layer thickness is also studied. The work suggests that in the field-plate structures, there is an optimum thickness of the SiN layer to minimize the buffer-related current collapse and drain lag in GaN MESFETs and AlGaN/GaN HEMTs

  14. Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

    Energy Technology Data Exchange (ETDEWEB)

    Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)

    2016-10-15

    The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.

  15. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111 substrate

    Directory of Open Access Journals (Sweden)

    Adarsh Nigam

    2017-08-01

    Full Text Available In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs characteristics fabricated on Si(111 substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  16. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

    2013-01-01

    This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

  17. Anthropocene Knowledge Practices in McKenzie Wark’s Molecular Red and Kim Stanley Robinson’s Aurora

    Directory of Open Access Journals (Sweden)

    Gib Prettyman

    2018-02-01

    Full Text Available Through a close reading of McKenzie Wark’s theoretical treatise 'Molecular Red' (2015 and Kim Stanley Robinson’s novel 'Aurora' (2015, this essay examines how Anthropocene knowledge practices challenge our conceptions of human agency in provocative and potentially productive ways. For example, our knowledge of climate science arises through global material infrastructures. As material components of Anthropocene knowledge practices, these infrastructures reveal the material labors and cyborg structures by means of which our knowledge is produced. Wark sees the heterogenous materiality of Anthropocene knowledge practices as evidence for the value of ‘low theories’ based on a ‘labor point of view.’ At the same time, Anthropocene knowledge practices reveal ‘eco-logical’ complexities and fundamental recognitions of the ‘intra-action’ of entangled matter. These complexities produce very estranged views of human agency. Robinson’s novel highlights the eco-logical implications of contemporary knowledge practices by imagining an interstellar ship that must function as a completely artificial ecosystem for a 170-year voyage to another solar system. The significance of knowledge practices and eco-logical complexity is most evident when failures or crises arise, and 'Aurora' tells the story of many such failures. However, I argue that Robinson’s novel and Wark’s ‘low theory’ ultimately function as hopeful accounts of Anthropocene knowledge practices. Among other things, these practices show the material importance of storytelling and point the way toward more complexly realist theories of human agency.

  18. Concept development of "compassion fatigue" in clinical nurses: Application of Schwartz-Barcott and Kim's hybrid model

    Directory of Open Access Journals (Sweden)

    Mahdieh Sabery

    2017-06-01

    Full Text Available Compassion fatigue is not a new concept in nursing; yet, it is not well known and there is no fixed clear definition of the term. The ambiguity surrounding how to define compassion fatigue has challenged its measurement and evaluation. Thus, any attempt to determine attributes of this underdeveloped concept and studying it in a new socio-cultural context requires concept development. The purpose of this study is to clarify the concept of compassion fatigue through concept development and to produce a vivid and tentative definition of this concept in clinical practice. Concept development was conducted using a three-step hybrid concept analysis including theoretical, fieldwork, and final analysis phases according to Schwartz-Barcott and Kim's method. We reviewed and analyzed 48 articles that met the inclusion criteria. Following, the first author conducted 13 interviews with clinical nurses followed by an inductive content analysis. Finally, a comprehensive definition of compassion fatigue in nurses was attained. Compassion fatigue in nurses can be explained as a cumulative and progressive process of absorption of the patient’s pain and suffering formed from the sympathetic and caring interactions with the patients and their families. The physical, emotional, intellectual, spiritual, social, and organizational consequences of compassion fatigue are so extensive that they threaten the existential integrity of the nurse. Context-based variables (culture, family, and community such as personality features like devotion behaviors and commitment towards the patient, exposure to multiple stressors, organizational challenges, and lack of self-care are factors associated with an increased risk of compassion fatigue. Concept development of compassion fatigue is the first step in the protection of nurses against the destructive consequences of compassion fatigue and to improve quality of care.

  19. Multiscale Modelling of Electronic and Thermal Transport : Thermoelectrics, Turbostratic 2D Materials and Diamond/c-BN HEMT

    Science.gov (United States)

    Narendra, Namita

    Multiscale modelling has become necessary with the advent of low dimensional devices as well as use of heterostructures which necessitates atomistic treatment of the interfaces. Multiscale methodology is able to capture the quantum mechanical atomistic details while enabling the simulation of micro-scale structures at the same time. In this thesis, multiscale modelling has been applied to study transport in thermoelectrics, turbostratic 2D MoS2/WS 2 heterostructure and diamond/c-BN high mobility electron transistor (HEMT). The possibility of enhanced thermoelectric properties through nanostructuring is investigated theoretically in a p-type Bi2Te3/Sb 2Te3 heterostructure. A multi-scale modeling approach is adopted to account for the atomistic characteristics of the interface as well as the carrier/phonon transport properties in the larger scales. The calculations clearly illustrate the desired impact of carrier energy filtering at the potential barrier by locally boosting the power factor over a sizable distance in the well region. Further, the phonon transport analysis illustrates a considerable reduction in the thermal conductivity at the heterointerface. Both effects are expected to provide an effective means to engineer higher zT in this material system. Next, power factor enhancement through resonant doping is explored in Bi2Te3 based on a detailed first-principles study. Of the dopant atoms investigated, it is found that the formation of resonant states may be achieved with In, Po and Na, leading potentially to significant increase in the thermoelectric efficiency at room temperature. While doping with Po forms twin resonant state peaks in the valence and conduction bands, the incorporation of Na or In results in the resonant states close to the valence band edge. Further analysis reveals the origin of these resonant states. Transport calculations are also carried out to estimate the anticipated level of enhancement. Next, in-plane and cross-plane transport

  20. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy; Um sistema de modulos NIM conjugados com entrada opcional por amplificador pHEMT para espectroscopia beta e gama

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Barbara; Lüdke, Everton, E-mail: barbarakonradmev@gmail.com, E-mail: eludke@smail.ufsm.br [Universidade Federal de Santa Maria (LAE/UFSM), RS (Brazil). Lab. de Astrofisica e Eletronica

    2014-07-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles.

  1. Urinary Biomarkers KIM-1 and NGAL for Detection of Chronic Kidney Disease of Uncertain Etiology (CKDu) among Agricultural Communities in Sri Lanka.

    Science.gov (United States)

    De Silva, Pallagae Mangala C S; Mohammed Abdul, Khaja Shameem; Eakanayake, Eakanayake M D V; Jayasinghe, Sudheera Sammanthi; Jayasumana, Channa; Asanthi, Hewa Bandulage; Perera, Hettiarachigae S D; Chaminda, Gamage G Tushara; Chandana, Ediriweera P S; Siribaddana, Sisira H

    2016-09-01

    Chronic Kidney Disease of uncertain etiology (CKDu) is an emerging epidemic among farming communities in rural Sri Lanka. Victims do not exhibit common causative factors, however, histopathological studies revealed that CKDu is a tubulointerstitial disease. Urine albumin or albumin-creatinine ratio is still being used as a traditional diagnostic tool to identify CKDu, but accuracy and prevalence data generated are questionable. Urinary biomarkers have been used in similar nephropathy and are widely recognised for their sensitivity, specificity and accuracy in determining CKDu and early renal injury. However, these biomarkers have never been used in diagnosing CKDu in Sri Lanka. Male farmers (n = 1734) were recruited from 4 regions in Sri Lanka i.e. Matara and Nuwara Eliya (farming locations with no CKDu prevalence) and two CKDu emerging locations from Hambantota District in Southern Sri Lanka; Angunakolapelessa (EL1) and Bandagiriya (EL2). Albuminuria (ACR ≥ 30mg/g); serum creatinine based estimation of glomerular filtration rate (eGFR); creatinine normalized urinary kidney injury molecule (KIM-1) and neutrophil gelatinase-associated lipocalin (NGAL) were measured. Fourteen new CKDu cases (18%) from EL1 and nine CKDu cases (9%) from EL2 were recognized for the first time from EL1, EL2 locations, which were previously considered as non-endemic of the disease and associated with persistent albuminuria (ACR ≥ 30mg/g Cr). No CKDu cases were identified in non-endemic study locations in Matara (CM) and Nuwara Eliya (CN). Analysis of urinary biomarkers showed urinary KIM-1 and NGAL were significantly higher in new CKDu cases in EL1 and EL2. However, we also reported significantly higher KIM-1 and NGAL in apparently healthy farmers in EL 1 and EL 2 with comparison to both control groups. These observations may indicate possible early renal damage in absence of persistent albuminuria and potential capabilities of urinary KIM-1 and NGAL in early detection of renal injury

  2. Urinary Biomarkers KIM-1 and NGAL for Detection of Chronic Kidney Disease of Uncertain Etiology (CKDu) among Agricultural Communities in Sri Lanka

    Science.gov (United States)

    Mohammed Abdul, Khaja Shameem; Eakanayake, Eakanayake M. D. V.; Jayasinghe, Sudheera Sammanthi; Jayasumana, Channa; Asanthi, Hewa Bandulage; Perera, Hettiarachigae S. D.; Chaminda, Gamage G. Tushara; Chandana, Ediriweera P. S.; Siribaddana, Sisira H.

    2016-01-01

    Chronic Kidney Disease of uncertain etiology (CKDu) is an emerging epidemic among farming communities in rural Sri Lanka. Victims do not exhibit common causative factors, however, histopathological studies revealed that CKDu is a tubulointerstitial disease. Urine albumin or albumin-creatinine ratio is still being used as a traditional diagnostic tool to identify CKDu, but accuracy and prevalence data generated are questionable. Urinary biomarkers have been used in similar nephropathy and are widely recognised for their sensitivity, specificity and accuracy in determining CKDu and early renal injury. However, these biomarkers have never been used in diagnosing CKDu in Sri Lanka. Male farmers (n = 1734) were recruited from 4 regions in Sri Lanka i.e. Matara and Nuwara Eliya (farming locations with no CKDu prevalence) and two CKDu emerging locations from Hambantota District in Southern Sri Lanka; Angunakolapelessa (EL1) and Bandagiriya (EL2). Albuminuria (ACR ≥ 30mg/g); serum creatinine based estimation of glomerular filtration rate (eGFR); creatinine normalized urinary kidney injury molecule (KIM-1) and neutrophil gelatinase-associated lipocalin (NGAL) were measured. Fourteen new CKDu cases (18%) from EL1 and nine CKDu cases (9%) from EL2 were recognized for the first time from EL1, EL2 locations, which were previously considered as non-endemic of the disease and associated with persistent albuminuria (ACR ≥ 30mg/g Cr). No CKDu cases were identified in non-endemic study locations in Matara (CM) and Nuwara Eliya (CN). Analysis of urinary biomarkers showed urinary KIM-1 and NGAL were significantly higher in new CKDu cases in EL1 and EL2. However, we also reported significantly higher KIM-1 and NGAL in apparently healthy farmers in EL 1 and EL 2 with comparison to both control groups. These observations may indicate possible early renal damage in absence of persistent albuminuria and potential capabilities of urinary KIM-1 and NGAL in early detection of renal injury

  3. Can You Anchor a Shimmering Nation State via Regional Indigenous Roots? Kim Scott talks to Anne Brewster about That Deadman Dance

    Directory of Open Access Journals (Sweden)

    Anne Brewster

    2011-10-01

    Full Text Available This interview focuses mainly on Kim Scott’s new novel That Deadman Dance which won the regional Commonwealth Writers Prize (Southeast Asian and Pacific region and the Miles Franklin Award. The topics of conversation include Scott’s involvement in the Noongar language project (and the relationship of this project to the novel, the novel itself, the challenges of writing in English, the resistance paradigm and indigenous sovereignty and nationalism.

  4. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy

    International Nuclear Information System (INIS)

    Konrad, Barbara; Lüdke, Everton

    2014-01-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles

  5. Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    International Nuclear Information System (INIS)

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-01

    The specific features of how nitride HEMT heterostructures are produced by NH 3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10 8 −1 × 10 9 cm −2 . The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH 3 -MBE with an extremely high ammonia flux are demonstrated

  6. Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    YongHe Chen

    2015-09-01

    Full Text Available By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT at gate bias beyond threshold voltage is studied. It is revealed that reverse current consists of area-related and perimeter-related current. An analytical model of electric field calculation is proposed to obtain the average electric field around the gate edge at high revers bias and estimate the effective range of edge leakage current. When the reverse bias increases, the increment of electric field is around the gate edge of a distance of ΔL, and perimeter-related gate edge current keeps increasing. By using the calculated electric field and the temperature-dependent current-voltage measurements, the edge gate leakage current mechanism is found to be Fowler-Nordheim tunneling at gate bias bellows -15V caused by the lateral extended depletion region induced barrier thinning. Effective range of edge current of Schottky diodes is about hundred to several hundred nano-meters, and is different in different shapes of Schottky diodes.

  7. Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si

    Science.gov (United States)

    Kumar, Sandeep; Remesh, Nayana; Dolmanan, S. B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, Digbijoy N.

    2017-11-01

    We report on the characterization of the interfaces of Al2O3/InAlN/GaN HEMT structure grown on 200 mm diameter silicon using conductance dispersion technique. Irreversible threshold voltage (VTH) shift of up to +∼2.5 V was observed due to the gate stress induced activation of acceptor states. Further, frequency dependent VTH shift during capacitance voltage measurements were also recorded due to the presence of slow traps at InAlN/GaN interface. The conductance dispersion indicated the presence of acceptor traps of the order of ∼4 × 1012 to 7 × 1013 cm-2 eV-1 with a time constant of ∼10 to 350 μs at the InAlN/GaN interface. Trap density at the Al2O3/InAlN was found to be in similar range but with a time constant of ∼2 μs. The presence of high density of traps at InAlN/GaN interface is attributed to the unavoidable growth interruption before the start of InAlN growth.

  8. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure for improving DC and RF characteristics

    Science.gov (United States)

    Razavi, S. M.; Zahiri, S. H.; Hosseini, S. E.

    2017-04-01

    In this study, a gallium nitride (GaN) high electron mobility transistor (HEMT) with recessed insulator and barrier is reported. In the proposed structure, insulator is recessed into the barrier at the drain side and barrier is recessed into the buffer layer at the source side. We study important device characteristics such as electric field, breakdown voltage, drain current, maximum output power density, gate-drain capacitance, short channel effects and DC transconductance using two-dimensional and two-carrier device simulator. Recessed insulator in the drain side of the proposed structure reduces maximum electric field in the channel and therefore increases the breakdown voltage and maximum output power density compared to the conventional counterpart. Also, gate-drain capacitance value in the proposed structure is less than that of the conventional structure. Overall, the proposed structure reduces short channel effects. Because of the recessed regions at both the source and the drain sides, the average barrier thickness of the proposed structure is not changed. Thus, the drain current of the proposed structure is almost equivalent to that of the conventional transistor. In this work, length ( L r) and thickness ( T r) of the recessed region of the barrier at the source side are the same as those of the insulator at the drain side.

  9. Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

    Science.gov (United States)

    Freeman, Jon C.; Mueller, Wolfgang

    2008-01-01

    Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

  10. Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

    Science.gov (United States)

    Ahmed, Nadim; Dutta, Aloke K.

    2017-06-01

    In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be the primary source of 2DEG carriers. To the best of our knowledge, this is a completely new contribution of this work. The electric field in the AlGaN layer is calculated using this model, which is further used to model the gate leakage current under reverse bias. We have modified the existing TTT (Thermionic Trap-Assisted Tunneling) current model, taking into account the effect of both metal/AlGaN interface traps as well as AlGaN bulk traps. The gate current under forward bias is also modeled using the existing thermionic emission model, approximating it by its Taylor series expansion. To take into account the effect of non-zero drain-source bias (VDS), an empirical fitting parameter is introduced in order to model the channel voltage in terms of VDS. The results of our models have been compared with the experimental data reported in the literature for three different devices, and the match is found to be excellent for both forward and reverse bias as well as for zero and non-zero VDS.

  11. Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

    International Nuclear Information System (INIS)

    Mi Min-Han; Zhang Kai; Zhao Sheng-Lei; Wang Chong; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue

    2015-01-01

    The influence of an N 2 O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (g m ) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (D T ) and time constant (τ T ) of the N 2 O-treated device are smaller than those of a non-treated device. The results indicate that the N 2 O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device. (paper)

  12. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  13. Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

    International Nuclear Information System (INIS)

    Huang Jie; Li Ming; Tang Chak-Wah; Lau Kei-May

    2014-01-01

    High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal—organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (g m ) of 247 mS/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the f T and f MAX is 50% and 52% higher, respectively. (interdisciplinary physics and related areas of science and technology)

  14. Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

    Science.gov (United States)

    Suria, Ateeq J.; Yalamarthy, Ananth Saran; Heuser, Thomas A.; Bruefach, Alexandra; Chapin, Caitlin A.; So, Hongyun; Senesky, Debbie G.

    2017-06-01

    In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10 nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50 nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (Ids-Vds) and gate leakage (Ig,leakage) characteristics up to 600 °C. Both, the 10 nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 °C, as evidenced by a sudden increase of approximately 50 times and 5.3 × 106 times in Ig,leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor.

  15. Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

    Directory of Open Access Journals (Sweden)

    Liwei Jin

    2013-01-01

    Full Text Available This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.

  16. Simulation study of HEMT structures with HfO{sub 2} cap layer for mitigating inverse piezoelectric effect related device failures

    Energy Technology Data Exchange (ETDEWEB)

    Nagulapally, Deepthi; Joshi, Ravi P., E-mail: rjoshi@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529-0246 (United States); Pradhan, Aswini [Department of Engineering and Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)

    2015-01-15

    The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO{sub 2} “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  17. Investigation of In0.7Ga0.3As/In0.7Al0.3As metamorphic HEMT- heterostructures by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Romanovskiy, D S; LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Tarasov, S A; Galiev, G B; Pushkarev, S S

    2014-01-01

    Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT- (MHEMT-) heterostructures with the same active regions and different buffer layer designs grown by solid-source molecular beam epitaxy. The indium mole fraction in InAlAs/InGaAs/InAlAs single quantum well (QW) is 0.7. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence and photoreflectance spectral lines and their thermal behaviour are critically discussed

  18. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  19. Association of urinary KIM-1, L-FABP, NAG and NGAL with incident end-stage renal disease and mortality in American Indians with type 2 diabetes mellitus.

    Science.gov (United States)

    Fufaa, Gudeta D; Weil, E Jennifer; Nelson, Robert G; Hanson, Robert L; Bonventre, Joseph V; Sabbisetti, Venkata; Waikar, Sushrut S; Mifflin, Theodore E; Zhang, Xiaoming; Xie, Dawei; Hsu, Chi-Yuan; Feldman, Harold I; Coresh, Josef; Vasan, Ramachandran S; Kimmel, Paul L; Liu, Kathleen D

    2015-01-01

    Kidney injury molecule 1 (KIM-1), liver fatty acid-binding protein (L-FABP), N-acetyl-β-D-glucosaminidase (NAG) and neutrophil gelatinase-associated lipocalin (NGAL) are urinary biomarkers of renal tubular injury. We examined their association with incident end-stage renal disease (ESRD) and all-cause mortality in American Indians with type 2 diabetes. Biomarker concentrations were measured in baseline urine samples in 260 Pima Indians who were followed for a median of 14 years. HRs were reported per SD of creatinine (Cr)-normalised log-transformed KIM-1, NAG and NGAL, and for three categories of L-FABP. During follow-up, 74 participants developed ESRD and 101 died. Median concentrations of KIM-1/Cr, NAG/Cr and NGAL/Cr and the proportion of detectable L-FABP were highest in those with macroalbuminuria (p associated with ESRD (HR 1.59, 95% CI 1.20, 2.11) and mortality (HR 1.39, 95% CI 1.06, 1.82); L-FABP/Cr was inversely associated with ESRD (HR [for highest vs lowest tertile] 0.40, 95% CI 0.19, 0.83). Addition of NGAL/Cr to models that included albuminuria and glomerular filtration rate increased the c-statistic for predicting ESRD from 0.828 to 0.833 (p = 0.001) and for death from 0.710 to 0.722 (p = 0.018). Addition of L-FABP/Cr increased the c-statistic for ESRD from 0.828 to 0.832 (p = 0.042). In Pima Indians with type 2 diabetes, urinary concentrations of NGAL and L-FABP are associated with important health outcomes, but they are unlikely to add to risk prediction with standard markers in a clinically meaningful way given the small increase in the c-statistic.

  20. Urinary Biomarkers KIM-1 and NGAL for Detection of Chronic Kidney Disease of Uncertain Etiology (CKDu among Agricultural Communities in Sri Lanka.

    Directory of Open Access Journals (Sweden)

    Pallagae Mangala C S De Silva

    2016-09-01

    Full Text Available Chronic Kidney Disease of uncertain etiology (CKDu is an emerging epidemic among farming communities in rural Sri Lanka. Victims do not exhibit common causative factors, however, histopathological studies revealed that CKDu is a tubulointerstitial disease. Urine albumin or albumin-creatinine ratio is still being used as a traditional diagnostic tool to identify CKDu, but accuracy and prevalence data generated are questionable. Urinary biomarkers have been used in similar nephropathy and are widely recognised for their sensitivity, specificity and accuracy in determining CKDu and early renal injury. However, these biomarkers have never been used in diagnosing CKDu in Sri Lanka. Male farmers (n = 1734 were recruited from 4 regions in Sri Lanka i.e. Matara and Nuwara Eliya (farming locations with no CKDu prevalence and two CKDu emerging locations from Hambantota District in Southern Sri Lanka; Angunakolapelessa (EL1 and Bandagiriya (EL2. Albuminuria (ACR ≥ 30mg/g; serum creatinine based estimation of glomerular filtration rate (eGFR; creatinine normalized urinary kidney injury molecule (KIM-1 and neutrophil gelatinase-associated lipocalin (NGAL were measured. Fourteen new CKDu cases (18% from EL1 and nine CKDu cases (9% from EL2 were recognized for the first time from EL1, EL2 locations, which were previously considered as non-endemic of the disease and associated with persistent albuminuria (ACR ≥ 30mg/g Cr. No CKDu cases were identified in non-endemic study locations in Matara (CM and Nuwara Eliya (CN. Analysis of urinary biomarkers showed urinary KIM-1 and NGAL were significantly higher in new CKDu cases in EL1 and EL2. However, we also reported significantly higher KIM-1 and NGAL in apparently healthy farmers in EL 1 and EL 2 with comparison to both control groups. These observations may indicate possible early renal damage in absence of persistent albuminuria and potential capabilities of urinary KIM-1 and NGAL in early detection of renal

  1. Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing

    International Nuclear Information System (INIS)

    Rabbaa, S; Stiens, J

    2012-01-01

    Gallium nitride (GaN) is a relatively new semiconductor material that has the potential of replacing gallium arsenide (GaAs) in some of the more recent technological applications, for example chemical sensor applications. In this paper, we introduce a triangular quantum well model for an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure used as a chemical and biological sensor for pH and dipole moment measurements of polar liquids. We have performed theoretical calculations related to the HEMT characteristics and we have compared them with experimental measurements carried out in many previous papers. These calculations include the current-voltage (I-V) characteristics of the device, the surface potential, the change in the drain current with the dipole moment and the drain current as a function of pH. The results exhibit good agreement with experimental measurements for different polar liquids and electrolyte solutions. It is also found that the drain current of the device exhibits a large linear variation with the dipole moment, and that the surface potential and the drain current depend strongly on the pH. Therefore, it can distinguish molecules with slightly different dipole moments and solutions with small variations in pH. The ability of the device to sense biomolecules (such as proteins) with very large dipole moments is investigated.

  2. Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

    International Nuclear Information System (INIS)

    Sun Wei-Wei; Zheng Xue-Feng; Fan Shuang; Wang Chong; Du Ming; Zhang Kai; Mao Wei; Zhang Jin-Cheng; Hao Yue; Chen Wei-Wei; Cao Yan-Rong; Ma Xiao-Hua

    2015-01-01

    The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons. (paper)

  3. Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

    International Nuclear Information System (INIS)

    Faramehr, Soroush; Kalna, Karol; Igić, Petar

    2014-01-01

    A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V–4000 V for a source-to-drain spacing (L SD ) of 6 μm–32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance R S for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm 2 and 3.5 mΩ · cm 2 , respectively. Further improvement up to BV  = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of R S = 35.5 mΩ · cm 2 . The leakage current in the proposed devices stays in the range of ∼5 × 10 −9 mA mm −1 . (paper)

  4. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    International Nuclear Information System (INIS)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

    2012-01-01

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

    2012-01-15

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Directory of Open Access Journals (Sweden)

    Xiaoqing Xu

    2016-11-01

    Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  7. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  8. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.

    Science.gov (United States)

    Sarangadharan, Indu; Regmi, Abiral; Chen, Yen-Wen; Hsu, Chen-Pin; Chen, Pei-Chi; Chang, Wen-Hsin; Lee, Geng-Yen; Chyi, Jen-Inn; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

    2018-02-15

    In this study, we report the development of a high sensitivity assay for the detection of cardiac troponin I using electrical double layer gated high field AlGaN/GaN HEMT biosensor. The unique gating mechanism overcomes the drawback of charge screening seen in traditional FET based biosensors, allowing detection of target proteins in physiological solutions without sample processing steps. Troponin I specific antibody and aptamer are used as receptors. The tests carried out using purified protein solution and clinical serum samples depict high sensitivity, specificity and wide dynamic range (0.006-148ng/mL). No additional wash or sample pre-treatment steps are required, which greatly simplifies the biosensor system. The miniaturized HEMT chip is packaged in a polymer substrate and easily integrated with a portable measurement unit, to carry out quantitative troponin I detection in serum samples with < 2µl sample volume in 5min. The integrated prototype biosensor unit demonstrates the potential of the method as a rapid, inexpensive, high sensitivity CVD biomarker assay. The highly simplified protocols and enhanced sensor performance make our biosensor an ideal choice for point of care diagnostics and personal healthcare systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.

    Science.gov (United States)

    Xu, Peiqiang; Jiang, Yang; Chen, Yao; Ma, Ziguang; Wang, Xiaoli; Deng, Zhen; Li, Yan; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

    2012-02-20

    GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.

  10. Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

    Science.gov (United States)

    Kubo, Toshiharu; Egawa, Takashi

    2017-12-01

    HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

  11. Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

    2017-11-01

    In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

  12. Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

    International Nuclear Information System (INIS)

    Palma, John; Mil'shtein, Samson

    2014-01-01

    Off-state breakdown voltage, V br , is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V br . This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V br on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V br upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages

  13. „Ritualno” i „struktuirano” odbacivanje u arheološkim interpretacijama: primer sistema za vodosnabdevanje na lokalitetu „Kale” u Krševici

    Directory of Open Access Journals (Sweden)

    Ivan Vranić

    2016-11-01

    Full Text Available Pitanja vezana za rituale, kultove, religiju ili magiju predstavljaju važne ali u značajnoj meri zanemarene i teorijski nedovoljno precizno utemeljene teme u savremenim arheološkim interpretacijama. Cilj rada jeste da na konkretnim primerima potencijalno ritualnih aktivnosti vezanih za izgradnju i moguće „ritualno ubijanje” sistema za vodosnabdevanje na lokalitetu „Kale” u Krševici pokaže kako ovo zanemarivanje nije samo posledica aktuelnosti i trendova o odabiru istraživačkih tema, već se radi o ozbiljnijem problemu koji pokazuje određene nedostatke savremenih pristupa vezanih za arheologiju identiteta i koncepte struktuiranog ili simboličkog odbacivanja.

  14. The prevalence of musculoskeletal disorders and occupational risk factors in Kashan SAIPA automobile industry workers by key indicator method (KIM, 1390

    Directory of Open Access Journals (Sweden)

    2012-05-01

    Full Text Available Introduction: work related musculoskeletal disorders are the most wide spread type of occupational diseases among workers. Awkward body postures during work and manual material handling are among the most important risk factors of musculoskeletal disorders in different jobs. Due to importance of recognizing these factors prevalence and risk factor of work related musculoskeletal disorders, this research was aimed to study the among employees of Kashan City’s Saipa automobile industry in 2011. .Material and Method: This study is a descriptive-cross sectional study conducted among workers with manual material handling 37 activities and 84 work duties. To recognize musculoskeletal disorders, body map questionnaire was applied and occupational risk factors were evaluated using Key Index Method (KIM. Data was analyzed using SPSS and Excel software. .Result: Highest prevalence of musculoskeletal disorders was in low and upper back region (%92. Based on the results from KIM, workers in the installing the tire, shuttle-aided fitting of seat, and engine work station had higher risk level with the scores of 66, 52 and 52, respectively. Risk level among three individuals (%3.6 was at 1, 40 (%47.6 at 2, 38 (%45.2 risk level 3, and 3 (%3.6 at 4. .Conclusion: Awkward body posture, improper twisting and flexion of low back were major risk factor among worker doing manual material handling tasks. Regarding the high prevalence of musculoskeletal disorders, appropriate ergonomic interventions such as engineering and organization interactions can reduce this risk factors (posture, heavy load, duration, workplace conditions as much as the risk level reach to an acceptable level.

  15. Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings — quantum well system

    Science.gov (United States)

    Sibirmovsky, Y. D.; Vasil'evskii, I. S.; Vinichenko, A. N.; Zhigunov, D. M.; Eremin, I. S.; Kolentsova, O. S.; Safonov, D. A.; Kargin, N. I.

    2017-11-01

    Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

  16. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

    Science.gov (United States)

    Panda, D. K.; Lenka, T. R.

    2017-06-01

    An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

  17. Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

    Science.gov (United States)

    Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

    2017-10-01

    NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

  18. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

    Science.gov (United States)

    Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

    2018-03-01

    Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

  19. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tarasova, E. A.; Obolenskaya, E. S., E-mail: obolensk@rf.unn.ru; Hananova, A. V.; Obolensky, S. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Zemliakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Nezhenzev, A. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Saharov, A. V.; Zazul’nokov, A. F.; Lundin, V. V.; Zavarin, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Medvedev, G. V. [JSC RPE Salut (Russian Federation)

    2016-12-15

    The sensitivity of classical n{sup +}/n{sup –} GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

  20. Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

    Science.gov (United States)

    Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

    2018-04-01

    This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

  1. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  2. "The Day All of the Different Parts of Me Can Come Along": Intersectionality and U.S. Third World Feminism in the Poetry of Pat Parker and Willyce Kim.

    Science.gov (United States)

    Van Ausdall, Mimi Iimuro

    2015-01-01

    This article brings to light the poetry of Pat Parker and Willyce Kim, two key figures within the 1970s and '80s women in print movement. While Parker and Kim have been rightly placed within African-American and Asian-American histories, respectively, and working-class and lesbian-feminist literary histories, their work is most fully understood within the context of U.S. Third World Feminism. Through close readings of poetic form and content in addition to engagement with current debates about intersectionality as a methodology, the article links Kim and Parker's works to central contributions of U.S. Third World Feminism such as intersectionality and power across and within difference that continue to influence feminist theory today.

  3. Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS)

    Science.gov (United States)

    Goyal, Anshu; Yadav, Brajesh S.; Raman, R.; Kapoor, Ashok K.

    2018-02-01

    Angle resolved X-ray photoelectron spectroscopy (ARXPS) and secondary ion mass spectrometry (SIMS) investigations have been carried out to characterize the GaN cap layer in AlGaN/GaN HEMT structure. The paper discusses the qualitative (presence or absence of a cap layer) and quantitative (cap layer thickness) characterization of cap layer in HEMT structure non-destructively using ARXPS measurements in conjunction with the theoretical modeling. Further the relative sensitive factor (RSF=σ/Ga σAl ) for Ga to Al ratio was estimated to be 0.963 and was used in the quantification of GaN cap layer thickness. Our results show that Al/Ga intensity ratio varies with the emission angle in the presence of GaN cap layer and otherwise remains constant. Also, the modeling of this intensity ratio gives its thickness. The finding of ARXPS was also substantiated by SIMS depth profiling studies.

  4. Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS

    Directory of Open Access Journals (Sweden)

    Anshu Goyal

    2018-02-01

    Full Text Available Angle resolved X-ray photoelectron spectroscopy (ARXPS and secondary ion mass spectrometry (SIMS investigations have been carried out to characterize the GaN cap layer in AlGaN/GaN HEMT structure. The paper discusses the qualitative (presence or absence of a cap layer and quantitative (cap layer thickness characterization of cap layer in HEMT structure non-destructively using ARXPS measurements in conjunction with the theoretical modeling. Further the relative sensitive factor (RSF=σGaσAl for Ga to Al ratio was estimated to be 0.963 and was used in the quantification of GaN cap layer thickness. Our results show that Al/Ga intensity ratio varies with the emission angle in the presence of GaN cap layer and otherwise remains constant. Also, the modeling of this intensity ratio gives its thickness. The finding of ARXPS was also substantiated by SIMS depth profiling studies.

  5. Analysis of the coexisting pathways for NO and N2O formation in Chernozem using the (15)N-tracer SimKIM-Advanced model.

    Science.gov (United States)

    Stange, Claus Florian; Spott, Oliver; Russow, Rolf

    2013-01-01

    The nitrogen (N) cycle consists of a variety of microbial processes. These processes often occur simultaneously in soils, but respond differently to local environmental conditions due to process-specific biochemical restrictions (e.g. oxygen levels). Hence, soil nitrogen cycling (e.g. soil N gas production through nitrification and denitrification) is individually affected through these processes, resulting in the complex and highly dynamic behaviour of total soil N turnover. The development and application of methods that facilitate the quantification of individual contributions of coexisting processes is a fundamental prerequisite for (i) understanding the dynamics of soil N turnover and (ii) implementing these processes in ecosystem models. To explain the unexpected results of the triplet tracer experiment (TTE) of Russow et al. (Role of nitrite and nitric oxide in the processes of nitrification and denitrification in soil: results from (15)N tracer experiments. Soil Biol Biochem. 2009;41:785-795) the existing SimKIM model was extended to the SimKIM-Advanced model through the addition of three separate nitrite subpools associated with ammonia oxidation, oxidation of organic nitrogen (Norg), and denitrification, respectively. For the TTE, individual treatments with (15)N ammonium, (15)N nitrate, and (15)N nitrite were conducted under oxic, hypoxic, and anoxic conditions, respectively, to clarify the role of nitric oxide as a denitrification intermediate during N2O formation. Using a split nitrite pool, this analysis model explains the observed differences in the (15)N enrichments in nitric oxide (NO) and nitrous oxide (N2O) which occurred in dependence on different oxygen concentrations. The change from oxic over hypoxic to anoxic conditions only marginally increased the NO and N2O release rates (1.3-fold). The analysis using the model revealed that, under oxic and hypoxic conditions, Norg-based N2O production was the dominant pathway, contributing to 90 and 50

  6. Urinary Vitamin D Binding Protein and KIM-1 Are Potent New Biomarkers of Major Adverse Renal Events in Patients Undergoing Coronary Angiography.

    Directory of Open Access Journals (Sweden)

    Lyubov Chaykovska

    Full Text Available Vitamin-D-binding protein (VDBP is a low molecular weight protein that is filtered through the glomerulus as a 25-(OH vitamin D 3/VDBP complex. In the normal kidney VDBP is reabsorbed and catabolized by proximal tubule epithelial cells reducing the urinary excretion to trace amounts. Acute tubular injury is expected to result in urinary VDBP loss. The purpose of our study was to explore the potential role of urinary VDBP as a biomarker of an acute renal damage.We included 314 patients with diabetes mellitus or mild renal impairment undergoing coronary angiography and collected blood and urine before and 24 hours after the CM application. Patients were followed for 90 days for the composite endpoint major adverse renal events (MARE: need for dialysis, doubling of serum creatinine after 90 days, unplanned emergency rehospitalization or death.Increased urine VDBP concentration 24 hours after contrast media exposure was predictive for dialysis need (no dialysis: 113.06 ± 299.61 ng/ml, n = 303; need for dialysis: 613.07 ± 700.45 ng/ml, n = 11, Mean ± SD, p<0.001, death (no death during follow-up: 121.41 ± 324.45 ng/ml, n = 306; death during follow-up: 522.01 ± 521.86 ng/ml, n = 8; Mean ± SD, p<0.003 and MARE (no MARE: 112.08 ± 302.00 ng/ml, n = 298; MARE: 506.16 ± 624.61 ng/ml, n = 16, Mean ± SD, p<0.001 during the follow-up of 90 days after contrast media exposure. Correction of urine VDBP concentrations for creatinine excretion confirmed its predictive value and was consistent with increased levels of urinary Kidney Injury Molecule-1 (KIM-1 and baseline plasma creatinine in patients with above mentioned complications. The impact of urinary VDBP and KIM-1 on MARE was independent of known CIN risk factors such as anemia, preexisting renal failure, preexisting heart failure, and diabetes.Urinary VDBP is a promising novel biomarker of major contrast induced nephropathy-associated events 90 days after contrast media exposure.

  7. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

    Science.gov (United States)

    Li, Weiyi; Zhang, Zhili; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

    2017-07-01

    We proposed a novel AlGaN/GaN enhancement-mode (E-mode) high electron mobility transistor (HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs (from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field. Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767).

  8. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  9. Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

    Directory of Open Access Journals (Sweden)

    P. Murugapandiyan

    2017-12-01

    Full Text Available A novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool. The remarkable potential device features such as heavily doped source/drain region, Al2O3 passivated device surface helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics. The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns of 1.9 × 1013 cm−2, the drain current density (Ids of 2.1 A/mm, the transconductance (gm of 800 mS/mm, the breakdown voltage (VBR of 40 V, the current gain cut-off frequency (ft of 221 GHz and the power gain cut-off frequency (fmax of 290 GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high power millimeter wave applications.

  10. Kim Davis: A Mother's Dilemma.

    Science.gov (United States)

    Hudecki, Michael S.

    2000-01-01

    Presents a discussion case in which parents must decide whether or not to enroll their sons in an experimental treatment program for muscular dystrophy. Identifies teaching objectives and discusses the key issues of the case--muscle structure and function, muscular dystrophy, scientists and money, scientific method and the FDA, and family health…

  11. Differences in immunolocalization of Kim-1, RPA-1, and RPA-2 in kidneys of gentamicin-, cisplatin-, and valproic acid-treated rats: potential role of iNOS and nitrotyrosine.

    Science.gov (United States)

    Zhang, Jun; Goering, Peter L; Espandiari, Parvaneh; Shaw, Martin; Bonventre, Joseph V; Vaidya, Vishal S; Brown, Ronald P; Keenan, Joe; Kilty, Cormac G; Sadrieh, Nakissa; Hanig, Joseph P

    2009-08-01

    The present study compared the immunolocalization of Kim-1, renal papillary antigen (RPA)-1, and RPA-2 with that of inducible nitric oxide synthase (iNOS) and nitrotyrosine in kidneys of gentamicin sulfate (Gen)- and cisplatin (Cis)-treated rats. The specificity of acute kidney injury (AKI) biomarkers, iNOS, and nitrotyrosine was evaluated by dosing rats with valproic acid (VPA). Sprague-Dawley (SD) rats were injected subcutaneously (sc) with 100 mg/kg/day of Gen for six or fourteen days; a single intraperitoneal (ip) dose of 1, 3, or 6 mg/kg of Cis; or 650 mg/kg/day of VPA (ip) for four days. In Gen-treated rats, Kim-1 was expressed in the epithelial cells, mainly in the S1/S2 segments but less so in the S3 segment, and RPA-1 was increased in the epithelial cells of collecting ducts (CD) in the cortex. Spatial expression of iNOS or nitrotyrosine with Kim-1 or RPA-1 was detected. In Cis-treated rats, Kim-1 was expressed only in the S3 segment cells, and RPA-1 and RPA-2 were increased in the epithelial cells of medullary CD or medullary loop of Henle (LH), respectively. Spatial expression of iNOS or nitrotyrosine with RPA-1 or RPA-2 was also identified. These findings suggest that peroxynitrite formation may be involved in the pathogenesis of Gen and Cis nephrotoxicity and that Kim-1, RPA-1, and RPA-2 have the potential to serve as site-specific biomarkers for Gen or Cis AKI.

  12. The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yun-Hsiang [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); A*STAR Institute of Microelectronics, Singapore 117685 (Singapore); Liang, Yung C., E-mail: chii@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); National University of Singapore (Suzhou) Research Institute, Suzhou 215123 (China); Samudra, Ganesh S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); Huang, Chih-Fang [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Kuo, Wei-Hung [Industrial Technology Research Institute, Chutung 31040, Taiwan (China); Lo, Guo-Qiang [A*STAR Institute of Microelectronics, Singapore 117685 (Singapore)

    2016-06-06

    In this paper, a normally-off AlGaN/GaN MIS-HEMT with improved threshold voltage (V{sub TH}) thermal stability is reported with investigations on its physical mechanism. The normally-off operation of the device is achieved from novel short argon plasma treatment (APT) prior to the fluorine plasma treatment (FPT) on Al{sub 2}O{sub 3} gate dielectrics. For the MIS-HEMT with FPT only, its V{sub TH} drops from 4.2 V at room temperature to 0.5 V at 200 °C. Alternatively, for the device with APT-then-FPT process, its V{sub TH} can retain at 2.5 V at 200 °C due to the increased amount of deep-level traps that do not emit electrons at 200 °C. This thermally stable V{sub TH} makes this device suitable for high power applications. The depth profile of the F atoms in Al{sub 2}O{sub 3}, measured by the secondary ion mass spectroscopy, reveals a significant increase in the F concentration when APT is conducted prior to FPT. The X-ray photoelectron spectroscopy (XPS) analysis on the plasma-treated Al{sub 2}O{sub 3} surfaces observes higher composition of Al-F bonds if APT was applied before FPT. The enhanced breaking of Al-O bonds due to Ar bombardment assisted in the increased incorporation of F radicals at the surface during the subsequent FPT process. The Schrödinger equation of Al{sub 2}O{sub x}F{sub y} cells, with the same Al-F compositions as obtained from XPS, was solved by Gaussian 09 molecular simulations to extract electron state distribution as a function of energy. The simulation results show creation of the deeper trap states in the Al{sub 2}O{sub 3} bandgap when APT is used before FPT. Finally, the trap distribution extracted from the simulations is verified by the gate-stress experimental characterization to confirm the physical mechanism described.

  13. Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

    International Nuclear Information System (INIS)

    Wang Yong; Yu Nai-Sen; Li Ming; Lau Kei-May

    2011-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I dss of 737mA/mm, peak transconductance G m of 185mS/mm, drain leakage current density I ds of 1.7μA/mm, gate leakage current density I gs of 24.8 μA/mm and off-state breakdown voltage V BR of 67 V are achieved with L g /W g /L gs /L gd = 1/10/1/1 μm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f T of 8.3 GHz and power gain cutoff frequency f max of 19.9 GHz are achieved with L g /W g /L gs /L gd = 1/100/1/1 μm. Furthermore, the best rf performance with f T of 14.5 GHz and f max of 37.3 GHz is achieved with a reduced gate length of 0.7μm. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Standards of Justice for Human Being and Doing in Kim Stanley Robinson’s 2312 and C. S. Friedman’s This Alien Shore

    Directory of Open Access Journals (Sweden)

    Claire P. Curtis

    2017-09-01

    Full Text Available The creation of superior societies and communities in which bodies live better and thrive depends on richly detailed accounts of imagined societies including flexible theories of justice that can be used to evaluate them. Both Kim Stanley Robinson’s '2312' (2012 and C. S. Friedman’s 'This Alien Shore' (1998 attempt to rethink what bodies can do and be, by exploring ways of living together among those with different, and differently compatible, bodies. The novels are set in future spacefaring societies away from the Earth, which nevertheless struggle with the fact of Earth’s existence. Each novel describes radical cognitive and bodily change: chosen alteration in '2312' and environmental transformation in 'This Alien Shore'. In each novel, the body, and what bodies can do and be, is a central issue. But how might we evaluate the societies these novels describe to gauge their contributions to articulating desires for a better way of being? In this article I employ Martha Nussbaum’s ‘capabilities approach’ (encompassing life, bodily health, bodily integrity, senses, emotions, reason, affiliation, play, other species, control over environment to think about justice in the articulation of evaluative standards. In so doing the analysis I develop addresses some key questions raised by these novels, including: Whose body will matter? Will there be bodily norms? How will communities confront different bodily abilities? How can we enhance our own thinking about how to live in and among bodies? How does (and should the idea of the body politic change when our expectations about bodies changes?

  15. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

    International Nuclear Information System (INIS)

    Wu Chia-Song; Chang Chien-Huang; Liu Hsing-Chung; Lin Tah-Yeong; Wu Hsien-Ming

    2010-01-01

    This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5-40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V ds of 2 V and a V gs of -0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications. (semiconductor integrated circuits)

  16. Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Celik, Ozlem; Tiras, Engin; Ardali, Sukru [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470 Eskisehir (Turkey); Lisesivdin, Sefer Bora [Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara (Turkey); Ozbay, Ekmel [Nanotechnology Research Center, Department of Physics, and Department of Electrical and Electronics Engineering, Bilkent University, Ankara (Turkey)

    2011-05-15

    Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (E{sub F}-E{sub 1}) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime ({tau}{sub q}) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m{sub 0} and 0.22 m{sub 0}. Our results for in-plane effective mass are in good agreement with those reported in the literature (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Alexeev, A. N. [NTO ZAO (Russian Federation); Krasovitsky, D. M. [Svetlana-Rost ZAO (Russian Federation); Petrov, S. I., E-mail: petrov@semiteq.ru [NTO ZAO (Russian Federation); Chaly, V. P.; Mamaev, V. V. [Svetlana-Rost ZAO (Russian Federation); Sidorov, V. G. [St. Petersburg State Polytechnic University (Russian Federation)

    2015-01-15

    The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.

  18. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

    Science.gov (United States)

    Panda, D. K.; Lenka, T. R.

    2017-12-01

    In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

  19. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

    Energy Technology Data Exchange (ETDEWEB)

    Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Yagovkina, M. A.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Cherkashin, N. A. [CEMES–CNRS—Université de Toulouse (France)

    2016-09-15

    The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.

  20. A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

    2015-01-01

    A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

  1. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  2. Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

    Science.gov (United States)

    Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

    2017-07-01

    In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

  3. Thirty-five-nm T-Gate In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs with an ultrahigh fmax of 610 GHz

    International Nuclear Information System (INIS)

    Choi, Do-Young; Kim, Sung-Ho; Choi, Gil-Bok; Jung, Sung-Woo; Jeong, Yoon-Ha

    2010-01-01

    Thirty-five-nanometer T-gate GaAs-based In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistors (mHEMTs) are successfully fabricated using a zigzag-shaped T-gate. We obtain a maximum extrinsic transconductance (g m ) of 1060 mS/mm and a maximum oscillation frequency (f max ) of 610 GHz. These superior results are obtained by reducing the T-gate's length to 35 nm without the assistance of a supporting layer and by fabricating a wide-recessed-gate structure. The stand-alone 35-nm T-gate effectively improves the device performance because it doesn't cause additional parasitic capacitances. The wide-recessed-gate structure alleviates impact ionization in the channel, which suppresses the kink effect in the output characteristic and reduces the output conductance (g ds ). In addition, the wide-recessed-gate structure reduces the gate-to-drain capacitance (C gd ); consequently realizing a state-of-the-art f max . The f max of 610 GHz, to our knowledge, is the highest value reported to date for GaAs-based HEMTs.

  4. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  5. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  6. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

    Directory of Open Access Journals (Sweden)

    Yanli Liu

    2015-01-01

    Full Text Available The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

  7. Baseline characteristics and response to 2 years of growth hormone (GH) replacement of hypopituitary patients with GH deficiency due to adult-onset craniopharyngioma in comparison with patients with nonfunctioning pituitary adenoma: data from KIMS (Pfizer International Metabolic Database).

    Science.gov (United States)

    Verhelst, Johan; Kendall-Taylor, Pat; Erfurth, Eva Marie; Price, David Anthony; Geffner, Mitchell; Koltowska-Häggström, Maria; Jönsson, Peter J; Wilton, Patrick; Abs, Roger

    2005-08-01

    In epidemiological studies, hypopituitary adults show increased mortality compared with population controls. Patients with hypopituitarism caused by a craniopharyngioma (CP) and/or its treatment have a higher mortality than patients with other etiologies, such as a nonfunctioning pituitary adenoma (NFPA). To analyze this difference, we used the KIMS database (Pfizer International Metabolic Database) comparing CP and NFPA patients in terms of baseline characteristics and responses to GH replacement. Baseline characteristics were studied in 351 CP patients (189 men and 162 women; mean age, 42.5 yr) and compared with 370 NFPA patients, matched for age and sex (185 men and 185 women; mean age, 42.5 yr). The effects of 2 yr of GH replacement were analyzed in a subgroup of 183 CP and 209 NFPA patients. At baseline, both CP and NFPA patients had characteristic features of GH deficiency, with low serum IGF-I, increased body fat, dyslipidemia, and reduced quality of life. Male CP patients were significantly more obese (30.0 vs. 28.2 kg/m2; P = 0.0003) compared with NFPA patients, had a higher waist/hip ratio (P = 0.004), higher triglycerides (P = 0.003), and lower high-density lipoprotein cholesterol (P = 0.03). Similar, but much smaller, differences were seen in female CP compared with NFPA patients, only reaching significance for waist/hip ratio (P = 0.05) and triglycerides (P = 0.0004). CP patients had more often undergone surgery by the transcranial route (68.8% vs. 30.9%; P NFPA patients (58.7% vs. 19.8%; P NFPA patients. After 2 yr of GH replacement therapy, similar significant improvements were evident in both groups in fat-free mass, total and low-density lipoprotein cholesterol, and Quality-of-Life-Assessment in GH Deficient Adults score compared with baseline. In contrast to NFPA patients, CP patients had no significant decrease in body fat with GH therapy. In the KIMS database, patients with CP have more often undergone surgery by the transcranial route than

  8. Retarderi na teškim vozilima

    Directory of Open Access Journals (Sweden)

    Joško Rapanić

    2012-10-01

    Full Text Available The objective of all the braking systems fitted in vehicles isto reduce the speed, as well as to keep them at a standstill. Inorder to increase the active road traffic safety, the experts inthe leading vehicle manufacturer companies are trying from day to day to find a more efficient solution of the highest possiblequality. Braking problems, i.e. problems of stopping the vehiclesare closely related to time, forces, momentum, mass andother physical quantities. This is best seen in the braking ofheavy duty vehicles, trucks, buses, where the braking efficacyis questionable due to high inertia forces caused by heavyweight and more recently relatively high speeds. Such vehiclesare fitted with system of brakes that operate on compressed airor combination of pneumatics and hydraulics, since the driverhas not got enough power to achieve appropriate braking effect.However, the biggest problems occur by trucks runningdownhill, when the braking system is operated continuously fora longer period of time. This causes heating and overheating ofthe system elements ("fading", thus reducing the braking effect.In extreme cases, particularly if the system is poorly maintained,it can eventually fail completely.Because of the mentioned reasons for difficulties in brakingof trucks, such vehicles have been recently fitted with anauxiliary slow-down system. This system is completely independentfromthe main one on the wheels and is used exclusivelyfor slowing down or for maintaining of speed.

  9. Ajateenistusest, ausalt! / Kim Järvepõld

    Index Scriptorium Estoniae

    Järvepõld, Kim

    2007-01-01

    Ilmunud ka: Postimees : na russkom jazõke, 9. apr. 2007, lk. 7. Autor leiab, et põhiseaduslik nõue, mille järgi on kõik Eesti kodanikud kohustatud osa võtma riigikaitsest, pole vastavuses tegeliku olukorraga, ning arvab, et kohustuslik ajateenistus tuleb kaotada või viia kooskõlla põhiseadusega

  10. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bru-Chevallier, C.; Maaref, H.

    2011-01-01

    InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT) structures were grown by Molecular Beam Epitaxy (MBE) on (3 1 1)A GaAs substrates with different well widths, and studied by photoluminescence (PL) spectroscopy as a function of temperature and excitation density. The PL spectra are dominated by one or two spectral bands, corresponding, respectively, to one or two populated electron sub-bands in the InGaAs quantum well. An enhancement of PL intensity at the Fermi level energy (E F ) in the high-energy tail of the PL peak is clearly observed and associated with the Fermi edge singularity (FES). This is practically detected at the same energy for all samples, in contrast with energy transitions in the InGaAs channel, which are shifted to lower energy with increasing channel thickness. PL spectra at low temperature and low excitation density are used to optically determine the density of the two-dimensional electron gas (2DEG) in the InGaAs channel for different thicknesses. The results show an enhancement of the 2DEG density when the well width increases, in good agreement with our previous theoretical study.

  11. kim Tasarım ve Ekşi Sözlük: İnternet’in Dönüşümünü Anlamak

    Directory of Open Access Journals (Sweden)

    Babacan Taşdemir

    2014-02-01

    Full Text Available Son yıllarda bir yanda devletler, diğer yanda sermaye kuruluşları, siyasi, idari ve ticari amaçları ile İnternet ortamını gittikçe daha fazla kolonileştirmektedirler. Bu da siyasi ve ticari baskılardan azade bir özgürlük alanı olarak görülen İnternet’e ilişkin toplumsal beklentilere zıt bir durum ortaya çıkarmaktadır. Çalışmamız, İnternet’teki bu dönüşümü üretim gücü ve üretim ilişkileri kavramları üzerinden eleştirel bir gözle değerlendirmeyi önermektedir. Dönüşüm, ‘Teknolojik Değişimin Döngüsel Modeli’ndeki ‘mayalanma dönemi’ ve ‘hâkim tasarım’ kavramlarının sunduğu potansiyelden faydalanılarak açıklanmaya çalışılmaktadır.  Burada ‘mayalanma dönemi’ ile İnternette ifade özgürlüğü açısından daha uygun olan ilk dönemlere, ‘hâkim tasarım’ ile ise yerleşik üretim ve iktidar ilişkilerinin daha fazla nüfuz ettiği yakın döneme gönderme yapılmaktadır. Ekşi Sözlük örneği ile de savlarını destekleyen çalışmamız, üç kategori üzerinden örnek olaylarla Sözlük’ün dönüşümünü değerlendirmektedir: İş çevreleriyle ticari ilişkilere bağlı dönüşüm, İnternet’in düzenlenmesine dair hukuki çerçeve ve kamu otoriteleri ile ilişkilere bağlı olarak geçirilen dönüşüm, Sözlük kullanıcıları ve sahipleri arasındaki örgütsel ilişkinin değişimi dolayımında geçirilen dönüşüm. Sonuç olarak, İnternet’in ‘mayalanma döneminde’, yani görece serbest bir ortamda, Ekşi Sözlük popülaritesini ve saygınlığını, yaratıcı ve muhalif duruş ile karakterize olan bir ifade alanı olarak kazansa da, zaman içinde tamamen kâr merkezli bir işletmeye dönüşmektedir. Böylece bir yandan pazarlama stratejilerinin ana mecralarından biri diğer yandan da politik baskıya tabii sıradan bir forum ve paylaşım sitesi haline gelmektedir. Sözlük’ün gelişimine ilişkin örnek olaylar ele

  12. Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bouzaiene, L.; Maaref, H.; Bru-Chevallier, C.

    2008-01-01

    The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phenomena, material properties and device applications. The photoluminescence (PL) spectra of the structures have been measured at low temperature. The dominant emission in the PL spectra is due to the recombination from the first electron (e1) subband to the first heavy-hole (hh1) subband (E 11 : e1-hh1). This feature (E 11 ) is a relatively broad peak and has a typical asymmetric line shape. The transformation of the PL spectra in the close vicinity of the Fermi edge (E F ) under different excitation densities gives strong evidence for the Fermi Edge Singularity (FES) existence. The density of the quasi-two-dimensional electron gas (2DEG) determined by PL study (n s PL ), is in sufficient agreement with the values found from Hall measurements n s Hall at 77 K. The results prove an increase of the electron density in sample grown on GaAs (111)A and (311)A rather than in equivalent sample grown on (001) GaAs substrate. This effect is in good agreement with our theoretical prediction, which is based on a self-consistent solution of the coupled Schroedinger and Poisson equations

  13. Kim, czym, kiedy, gdzie i dlaczego są polscy Żydzi? Wyobrażanie, konstruowanie i zawłaszczanie Żydów polskich

    Directory of Open Access Journals (Sweden)

    Scott Ury

    2017-12-01

    Full Text Available Who, what, when, where, and why is Polish Jewry? Envisioning, constructing, and possessing Polish Jewry This article examines the different ways that various communities of scholars imagine, research and teach about “Polish Jewry.” Focusing on scholarship written in Israel, Poland and the United States over the past generation or two, the article argues that each particular community of scholars constructs a particular version of Polish Jewry and that each of these versions is deeply influenced by contemporary social, political and communal needs and demands. As a result, scholars very often end up constructing radically different versions of Polish Jewish history and society. These scholarly differences reflect many of the challenges and difficulties related to researching and writing about the history and culture of Polish Jews since 1989.   Kim, czym, kiedy, gdzie i dlaczego są polscy Żydzi? Wyobrażanie, konstruowanie i zawłaszczanie Żydów polskich Artykuł stanowi omówienie odmiennych sposobów, jakimi różne społeczności badaczy wyobrażają grupę polskich Żydów, badają ją i nauczają o niej. Na podstawie analizy działalności naukowej badaczy z Izraela, Polski i Stanów Zjednoczonych ostatnich dwóch pokoleń autor pokazuje, że każda społeczność badaczy konstruuje własny, specyficzny obraz grupy zwanej „polskimi Żydami” i że obrazy te pozostają pod przemożnym wpływem współczesnych potrzeb i wymogów o naturze społecznej, politycznej i wspólnotowej. Na skutek tych różnic uczeni tworzą często radykalnie odmienne obrazy historii i społeczeństwa polskich Żydów. Różnice stanowią odzwierciedlenie przeszkód i utrudnień, jakie po 1989 roku wiążą się z badaniem i opisywaniem historii i kultury polskich Żydów.

  14. Keeping Kim; How the Kim Conundrum Best Serves American Interests in the Asia Pacific

    Science.gov (United States)

    2018-04-18

    Bombs South Korea’s Yeonpyeong Island," The Telegraph, November 23. 2010. http://www.telegraph.co.uk/news/worldnews/asia...southkorea/8153000/North-Korea- bombs -South-Koreas- Yeonpyeong-Island.html (accessed 01/05/2017, 2017). 25 A key initiative during the Sunshine Policy was...tr ad in g pa rt ne r Sa m e et hn ic ity ; di ff er en t sy st em o f go ve rn an ce So ve re ig nt y iss ue s a lw ay s co ns id er ed

  15. El individuo en el cambio: la transformación de las relaciones bilaterales entre la República de Corea y la República Popular Democrática de Corea, bajo la figura del presidente surcoreano Kim Dae-Jung

    OpenAIRE

    Perilla Moreno, Jairo Andrés

    2017-01-01

    Este artículo busca interpretar el proceso mediante el cual las ideas y presupuestos políticos y sociales del expresidente surcoreano Kim Dae-Jung, permitieron una transformación significativa de las relaciones bilaterales entre Corea del Sur y Corea del Norte, durante su periodo presidencial entre los años 1998 y 2003. Inicialmente, dichas relaciones estuvieron caracterizadas por una incesante tensión militar como resultado de la Guerra de Corea, escenario dentro del cual apareció la figura ...

  16. kim Seyyid Mehmed And His Book Called Nazire-i Hilye-i Hâkanî / HÂKİM SEYYİD MEHMED EFENDİ’NİN “NAZİRE-İ HİLYE-İ HÂKANΔ ADLI ESERİ

    Directory of Open Access Journals (Sweden)

    Yakup POYRAZ (M.A.H.

    2007-08-01

    Full Text Available As a result of the deep divine love people had for our Prophet, various literarytypes such as mevlit and na’t appeared. Of these types, hilye is one of the morepopular ones. Hilyes describe our Prophet physically and morally and theyusually convey the divine love poets have for him. The best-known hilye inTurkish literature, Hilye-i Hâkanî, was written by Hâkanî Mehmet Bey in 16thcentury. One of the nazires written in this hilye belongs to Hâkim SeyyidMehmed who was an 8th century poet. This nazire is usually regarded as one ofthe best in Hilye-i Hâkanî. In this article investigated Hilye-i Hâkanî and madeuseful form to literature.

  17. RAZLIKE U MOTORIČKIM SPOSOBNOSTIMA BOKSERA I NESPORTISTA

    Directory of Open Access Journals (Sweden)

    Benin Murić

    2011-03-01

    Full Text Available This research was conducted with the aim to define differences in motor abilities and morphological characteristics between judists and non/athletes of the same age. Sample encompassed 120 subjects having 60 students non/athletes and 60 students actively engaged in sports. For the evaluation of motor abilities there were conducted 12 measuring instruments. Testing of the posted hypotheses was performed on the basis of statistical data. The obtained results of this research in motor area have shown that there is statistically significant difference between selected boxsers and students not going in for box. This difference is defined by significantly better values and results in motor tests performed by the selected boxers.

  18. Belarus - a unique case in the European context? / Kim Lausten

    Index Scriptorium Estoniae

    Lausten, Kim

    2003-01-01

    Valgevene presidendi Aleksander Lukashenko autoritaarsest režiimist, sellega seonduvatest võimalikest ohtudest Valgevene naaberriikide julgeolekule. Autor analüüsib Lukashenko režiimi institutsioonilisi ning sotsiaalpoliitilisi tagamaid

  19. [Recent books on international law] / Yoonie Kim, Paul R Williams

    Index Scriptorium Estoniae

    Kim, Yoonie

    2005-01-01

    Arvustus: Lauri Mälksoo. Illegal Annexation and State Continuity : The Case of the Incorporation of the Baltic States by the USSR. Study of the Tension between Normativity and Power in International Law. Leiden ; Boston, 2003

  20. Reliability Investigation of GaN HEMTs for MMICs Applications

    Directory of Open Access Journals (Sweden)

    Alessandro Chini

    2014-08-01

    Full Text Available Results obtained during the evaluation of radio frequency (RF reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented.

  1. GaN-HEMT VSWR Ruggedness and Amplifier Protection

    NARCIS (Netherlands)

    Bengtsson, O.; Bent, G. van der; Rudolph, M.; Würfl, J.; Heijningen, M. van; Vliet, F.E. van

    2010-01-01

    This paper presents the initial results in a study aimed at exploring the use of GaN-devices in applications where they are at risk of being exposed to high output voltage-standing-wave-ratio (VSWR) conditions. A measurement method developed to identify the limits of such stress is described

  2. The role of relA and spoT in Yersinia pestis KIM5 pathogenicity.

    Directory of Open Access Journals (Sweden)

    Wei Sun

    2009-08-01

    Full Text Available The ppGpp molecule is part of a highly conserved regulatory system for mediating the growth response to various environmental conditions. This mechanism may represent a common strategy whereby pathogens such as Yersinia pestis, the causative agent of plague, regulate the virulence gene programs required for invasion, survival and persistence within host cells to match the capacity for growth. The products of the relA and spoT genes carry out ppGpp synthesis. To investigate the role of ppGpp on growth, protein synthesis, gene expression and virulence, we constructed a Delta relA Delta spoT Y. pestis mutant. The mutant was no longer able to synthesize ppGpp in response to amino acid or carbon starvation, as expected. We also found that it exhibited several novel phenotypes, including a reduced growth rate and autoaggregation at 26 degrees C. In addition, there was a reduction in the level of secretion of key virulence proteins and the mutant was > 1,000-fold less virulent than its wild-type parent strain. Mice vaccinated subcutaneously (s.c. with 2.5x10(4 CFU of the Delta relA Delta spoT mutant developed high anti-Y. pestis serum IgG titers, were completely protected against s.c. challenge with 1.5x10(5 CFU of virulent Y. pestis and partially protected (60% survival against pulmonary challenge with 2.0x10(4 CFU of virulent Y. pestis. Our results indicate that ppGpp represents an important virulence determinant in Y. pestis and the Delta relA Delta spoT mutant strain is a promising vaccine candidate to provide protection against plague.

  3. Concept Development of “Nursing Presence”: Application of Schwartz-Barcott and Kim's Hybrid Model

    Directory of Open Access Journals (Sweden)

    Fatemeh Mohammadipour, PhD

    2017-03-01

    Conclusion: Co-constructed interaction underscored the value of the nursing presence as an integral component of caring with humanistic and patient-centered approaches. The findings could help clinical nurses have a better understanding of the nursing presence. Findings also can improve educators' and managers' knowledge for developing and conducting appropriate education strategies and caring activities to facilitate the promotion of nursing presence.

  4. Hlapivi spojevi arome dalmatinske pancete proizvedene u različitim tehnološkim uvjetima

    OpenAIRE

    Krvavica, Marina; Milak, Vedrana

    2017-01-01

    Cilj ovog istraživanja bio je utvrditi u kojoj mjeri razlike u načinu soljenja (sa ili bez aditiva, utrošak soli/salamure, duljina faze soljenja), načinu dimljenja (ložište unutar ili izvan objekta i temperatura dima) te duljina sušenja i zrenja, utječu na sastav hlapivih spojeva arome dalmatinske pancete. U navedenu svrhu uzeta su po 2 uzorka dalmatinske pancete iz dva različita preradbena objekta na području Dalmacije, u kojima je panceta proizvedena na sljedeći način: objekt A – salamurenj...

  5. RAZLIKE U MOTORIČKIM SPOSOBNOSTIMA ODBOJKAŠA I NETRENIRANIH UČENIKA

    Directory of Open Access Journals (Sweden)

    Petar Karadžić

    2011-09-01

    Full Text Available Volleyball is a typical sport of polistructural motion. It is abundant in fast and varied body motions such as jumping, half-roll, rolling and throwing with fast reactions to various situations. This study was conducted with the aim of determining the difference between general motor skills of young volleyball players and untrained boys of the same age. The sample of examinees for this survey was taken from the population of boys aged 15 and 16 years. The experimental group was comprised of 16 male players from VC “Buducnost PB”.. The control group was comprised of 15 eighth grade boys from elementary school "Vuk Karadzic" from Podgorica. Testing of motor abilities in this study was conducted using the following variables: japan test, sargent’s test, standing long jump, throwing a medicine ball from lying position, raising the trunk from the ground, push-ups on the ground, hand taping, and a deep bend on the bench. From the area of comparative parametric statistics, for independent samples, T-test was applied. It was found that between the two groups (trained young volleyball players and their untrained peers in the control group, generally, there is no significant statistical difference in terms of basic motor skills. Statistically significant difference was found only in the test of raising the trunk from the ground which was used to hypothetically evaluate the repetitive potential of abdominal muscles. Only in this test, namely, the realized level of significance was below the theoretical limit (Sig. <.05.. We can assume that volleyball training has an abundance of stimulus that aim on development of abdominal muscles

  6. A Grand Challenge: Immortal Information and Through-Life Knowledge Management (KIM

    Directory of Open Access Journals (Sweden)

    Alexander Ball

    2006-11-01

    Full Text Available ‘Immortal information and through-life knowledge management: strategies and tools for the emerging product-service business paradigm’, is a Grand Challenge project involving eleven different UK universities and incorporating substantial industry collaboration. It is investigating a range of issues associated with the move towards a product-service paradigm in the engineering sector, in particular the long-term curation of digital data, learning from production and use, and appropriate governance and management techniques.

  7. Matematika u vojnotehničkim dostignućima / Mathematics in military-technical achievements

    Directory of Open Access Journals (Sweden)

    Natalija B. Jelenković

    2010-10-01

    Full Text Available Matematika se definiše kao vrsta filozofije ili pogleda na svet, sredstvo za razvijanje apstraktnog mišljenja, a služi i za pojednostavljenje prirodnih nauka. Prilično je specijalna - izučava količinu i poredak; uopšteno, to je nauka o formalnim strukturama. Ona je i kombinacija slobode kreativne misli i strogih logičkih pravila, ali i deduktivna nauka koja daje pravila i zakone pomoću kojih baratamo brojevima i prostorom. Kao takva, matematika je i savremeni alat za vojnotehnička dostignuća modernog doba, kao što su: sve vrste radio i radio-relejnih veza, radarska sredstva, sredstva za upravljanje, navigaciju, televizijska, optoelektronska, hidro- akustična sredstva, sredstva za protivelektronsku borbu, kao i mnoga elektronska tehnička sredstava, naoružanje i vojna oprema Kopnene vojske, Vazduhoplovstva i protiv-vazduhoplovne odbrane, Ratne mornarice. Prethodno istaknute definicije matematike su korišćene kao osnova za uopšteno sistematizovano izlaganje metodom uporednog opisivanja, nabrajanjem činjenica, definisanjem pojmova. Cilj članka je da se na osnovu nabrojanja postojećih primena matematike i proširivanjem znanja može dalje napredovati u istraživanju mnogih vojnih oblasti. Pored toga, članak ima i pedagoški cilj, a to je da kroz opise i karakteristike sredstava ratne tehnike zainteresuje i afirmiše značaj i lepotu vojnog poziva. Rezultati razvoja informacionih tehnologija su, pored ostalog, i savršenija vojnotehnička dostignuća, a predstavljaju i inspiraciju za mnoge inovacije i uspehe. / In this article, mathematics is dealt with as a science necessary for the design, development and implementation of certain military-technical achievements such as many electronic devices, smart missiles, miniature antennas, camouflage military clothing and other military equipment. Some areas of applied, discrete and continuous mathematics are underlined in particular. Application of mathematics The importance of mathematics for military-technical achievements is reflected in the fact that mathematics allowed the existence and development of military disciplines such as: fortifications, military statistics, military economics, cryptography, military psychology, air force, military-technical and military information science. There are also many applications using mathematical models and linear programming. Mathematics is thus necessary and indispensable as a tool, a way of expression and communication, as well as the basic creation of further progress. This article reveals the connection of mathematics and certain military areas that are important for the development of the armed forces and war materiel. The application of mathematics in military- technical achievements is entailed in the connection of mathematics with military disciplines. Information technology - Basic concepts Some identified problems occurring in military purposes are mentioned through some basic concepts and benefits related to information technology. Comparative description and listing of characteristic traits resulting in the noticed and given advantages and disadvantages highlighted the creation of information technologies, first by using conventional programs and programming and then by using artificial intelligence and expert systems.

  8. Systemically applied insecticides for treatment of erythrina gall wasp, quadrastichus erythrinae kim hymenoptera: Eulophidae

    Science.gov (United States)

    Doccola, J.J.; Smith, S.L.; Strom, B.L.; Medeiros, A.C.; Von Allmen, E.

    2009-01-01

    Abstract The erythrina gall wasp (EGW), believed native to Africa, is a recently described species and now serious invasive pest of Erythrina (coral trees) in tropical and subtropical locales. Erythrina are favored ornamental and landscape trees, as well as native members of threatened ecosystems. The EGW is a tiny, highly mobile, highly invasive wasp that deforms (galls) host trees causing severe defoliation and tree death. The first detection of EGW in the United States was in O'ahu, Hawai'i in April 2005. It quickly spread through the Hawai'ian island chain (U.S.) killing ornamental and native Erythrina in as little as two years. At risk are endemic populations of Erythrinaas well as ornamental landscape species in the same genus, the latter of which have already been killed and removed from O'ahu at a cost of more than USD $1 million. Because EGW are so small and spread so quickly, host injury is usually detected before adult wasps are observed, making prophylactic treatments less likely than therapeutic ones. This study evaluates two stem-injected insecticides, imidacloprid (IMA-jet??) and emamectin benzoate, delivered through Arborjet Tree I.V.?? equipment, for their ability to affect E. sandwicensis (wiliwili) canopy demise under severe EGW exposure. IMA-jet, applied at a rate of 0.16 g AI/cm basal diameter (0.4 g AI/in. dia.), was the only effective treatment for maintaining canopy condition of wiliwili trees. Emamectin benzoate, applied at a rate of -0.1 g AI/cm basal diameter (-0.25 g AI/in. dia.), was not effective in this application, although it was intermediate in effect between IMA-jet and untreated trees. The relatively high concentrations of imidacloprid in leaves, and its durability for at least 13 months in native wiliwili growing on a natural, dryland site, suggest that treatment applications against EGW can impact canopy recovery even under suboptimal site and tree conditions. ?? 2009 International Society of Arboriculture.

  9. RAZLIKE U MOTORIČKIM SPOSOBNOSTIMA UČENIKA SPORTISTA I UČENIKA NESPORTISTA

    Directory of Open Access Journals (Sweden)

    Hasim Mekić

    2011-09-01

    Full Text Available Teaching physical education in primary schools takes more character to growing concerns that stem from the personal attitude of the students teaching on the one hand, and poor motivation of teachers due to lack of adequate working conditions for the other. As the official attitude of the community not to allow such a situation, the more we meet with the appearance of lack of justification to continue the spread of pronunciation, and very little to takemeasures to combat such a situation. Testing in sport and physical education, at the present time is the present phenomenon than it was before. Course planned test involves measuring the organized team sports, students in specialized conditions (laboratories. However, testing is a term that includes the daily, routine measurement of results in the function of training process monitoring results as either transverse or longitudinal cross-section of states. Motor skills are one of the psychosomatic status, which expresses the efficiency of motor response and motor behavior of humans. Motor skills are very important part during the building of sports performance in most sports. One part of the motor abilities under significant influence of genetic factors, while the other part subject to the influence of various external factors, especially in sports exercise which is represented in physical education and sports training for children and youth, sports and recreation for adults.

  10. Primena GIS-a u hidrološkim istraživanjima - primer reke Lepenice

    Directory of Open Access Journals (Sweden)

    Milanović Ana

    2007-01-01

    Full Text Available The basic component of GIS technology (Geographical Information Systems is the base of graphical data, which can be used for geographical definition of spaces elements- entities. As a new, modern, technology, it has more application in different hydrological researches. In GIS creation Lepenica river basin, it was applied softwares: Micro Station, GeoMedia, Surfer 7. Map and AutoCAD. After data base creation, it was enabled for users to get different information of Lepenica river basin on the simple way. Getting data are used for creation of three thematic maps (altitude zones map, hydrographical net map and precipitation isoline map.

  11. Dr Jung Hyun KIM Vice Minister for Education, Science and Technology MEST Republic of Korea

    CERN Multimedia

    Jean-Claude Gadmer

    2010-01-01

    He learnt about CERN's LHC computing grid project from Frédéric Hemmer, head of the information technology department. In addition, the vice-minister toured the ATLAS visitor centre, the CMS control centre, the ALICE experiment's exhibition and control room, and he met Korean scientists at CERN.

  12. Obredi i teologija u mistagoškim katehezama Ćirila Jeruzalemskoga

    OpenAIRE

    Mandac, Marijan

    2002-01-01

    U uvodnom dijelu donosi se kratki životopis sv. Ćirila Jeruzalemskoga i prikaz njegovih Mistagoških kateheza kojima se najavljuje hrvatski prijevod. Potom se predstavlja kratak sadržaj svih pet mistagoških kateheza: Prva s obredima odricanja od Sotone, pristajanje uz Krista i ispovijed vjere; Druga s obredom pomazanja i odijevanja posebne krsne odjeće; Treća je posvećena potvrdi i predstavlja nezaobilazno djelo patrističke literature o tome; Četvrta izlaže otajstvo euharistije, a peta tumači ...

  13. RAZLIKE U MOTORIČKIM SPOSOBNOSTIMA UČENIKA SPORTISTA I UČENIKA NESPORTISTA

    OpenAIRE

    Hasim Mekić; Benin Murić; Vladan Milić; Fahrudin Mavrić

    2011-01-01

    Teaching physical education in primary schools takes more character to growing concerns that stem from the personal attitude of the students teaching on the one hand, and poor motivation of teachers due to lack of adequate working conditions for the other. As the official attitude of the community not to allow such a situation, the more we meet with the appearance of lack of justification to continue the spread of pronunciation, and very little to takemeasures to combat such a situation. Test...

  14. Sinise ookeani strateegia : konkurentsi vältimise kunst / W. Chan Kim, Renee Mauborgne

    Index Scriptorium Estoniae

    Kim, W. Chan, 1952-

    2006-01-01

    Sinise ookeani strateegia õpetab, kuidas tegutseda konkurentidest vabal turul. Kommenteerib Hansapanga juhatuse esimees Erkki Raasuke. Lisad: Sinine ookean Tartus; Punane ookean versus sinine ookean. Tabel: Sinise ookeani loomise ajaloost

  15. North Korea’s Provocation and Escalation Calculus: Dealing with the Kim Jong-un Regime

    Science.gov (United States)

    2015-08-01

    regime. “The Interview” In the early 2000s, Seth Rogan and Evan Goldberg conceived of a plot for a comic take on the assassination of a world...responsible for the education and training of the regime’s cyber warriors.55  The State Security Department’s (secret police) communications monitoring and...is young and lacks the expansive and deep education his father had before taking the reins of power. This has created a certain narrative in the

  16. Lessons learned from 15 years of KIMS and 5 years of ACROSTUDY

    DEFF Research Database (Denmark)

    Luger, Anton; Feldt-Rasmussen, Ulla; Abs, Roger

    2011-01-01

    -deficient adults for 15 years. Approximately 5 years ago, the ACROSTUDY database was established to monitor the long-term safety and effectiveness of pegvisomant in patients with acromegaly. CONCLUSIONS: By collecting data on the treatment of relatively rare conditions in routine clinical practice...

  17. TIP ORGANIZACIJE GRUPE U KOŠARKAŠKIM TIMOVIMA 1. LIGE SRBIJE I CRNE GORE

    Directory of Open Access Journals (Sweden)

    Igor Vučković

    2006-06-01

    Full Text Available In this study were analysed the differences between better placed and worse placed teams of the First basketaball league of Serbia and Montenegro in The type of group organization. The aim was to see in which type of group organization (extrovert or introvert mentioned teams belong, and then to relate it with the final position of their team on the standing. After discriminant analysis it was concluded that there are significant differences between better placed and worse placed teams in The type of group organization with the benefit of the better placed teams.

  18. Type 2-diabetes--en heterogen sygdom med kim i fostertilstanden

    DEFF Research Database (Denmark)

    Vaag, Allan

    2012-01-01

    Type 2 diabetes (T2D) is a heterogeneous disease with a multifactorial aetiology involving defects in the pancreatic beta cells, liver, muscles, adipose tissue, guts, brain, kidneys and heart. While genetics may only explain a minor proportion of T2D, the contribution of an adverse intrauterine...... environment may take centre stage in the global propagation of T2D. Impaired expandability of subcutaneous adipose tissue in persons with low birthweight may cause T2D due to lipotoxicity in non-adipose organs. Future implications include a stronger focus on individualized treatments in T2D patients...

  19. Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

    Science.gov (United States)

    2016-10-01

    the wedge to a nanomanipulator probe. d- Lifting -out of the wedge from the bulk sample. e- Attachment of a portion of the wedge to one of the silicon...out by subcontractor Scientic, Inc. The exposures were conducted at the Gamma Radiation Facility at NAVSEA Crane division with doses up to ~6 Mrad

  20. Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2018-03-01

    Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

  1. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure ...

    Indian Academy of Sciences (India)

    2017-03-08

    Mar 8, 2017 ... AlGaN/GaN high electron mobility transistor; breakdown voltage; output power density; short channel effect ... is an n-type heavily doped Al0.32Ga0.68N while the ..... [15] S E J Mahabadi, A A Orouji, P Keshavarzi and H A.

  2. Thermal Modeling of GaN HEMTs on Sapphire and Diamond

    National Research Council Canada - National Science Library

    Salm, III, Roman P

    2005-01-01

    ... to diamond through the use of commercially available Silvaco software for modeling and simulation. The unparalleled thermal properties of diamond are expected to dramatically decrease device temperatures and increase component lifetimes and reliability.

  3. Transmisor Outphasing en UHF con tecnología GaN HEMT

    OpenAIRE

    Mendiguchia Gutiérrez, Hugo

    2017-01-01

    La evolución hacia nuevas generaciones de sistemas de comunicación inalámbricas, el caso de 4G y 5G en sistemas móviles, ha venido acompañada por un incremento en la eficiencia espectral de los formatos de modulación digital seleccionados. A cambio, la señal paso-banda a transmitir experimenta una variación muy pronunciada en su envolvente, con valores elevados de relación potencia pico a potencia promedio (PAPR de sus siglas en inglés). Entre las arquitecturas más atractivas para una amplifi...

  4. W-band InP based HEMT MMIC low noise amplifiers

    Science.gov (United States)

    Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

    2002-01-01

    This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

  5. ZnO HEMTs on Flexible Substrates for Large Area Monolithic Antenna Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — AMBP Tech will implement Zinc Oxide high mobility material technology it has developed specifically for flexible electronics into a direct write process onto large...

  6. Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT’S

    Science.gov (United States)

    1998-08-01

    device (VDS = 7.5 V, VQS = -0.1 V, 137 hrs). (b) Drain Current FT-DLTS measurements in an as received device (open simbols ) and in a device after hot...electron stress test: VDS = 7.5 V, VQS = - 0.1 V, 137 hrs (closed simbols ). output characteristics of degraded devices and completely eliminates

  7. AlGaN/GaN-based HEMT on SiC substrate for microwave ...

    Indian Academy of Sciences (India)

    strength and good thermal stability [1–8]. Apart from this ... In this work, we have considered. Si3N4 and ... of the maximum power by a factor of 3 [12,13]. According ... of the passivation layer might influence device performance [13]. This type of ...

  8. RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures

    International Nuclear Information System (INIS)

    Hallén, Anders; Moschetti, Giuseppe

    2014-01-01

    Electrical isolation of InAs/AlSb high electron mobility transistors has been achieved by the ion implantation isolation technique. The multilayered structures are grown by molecular beam epitaxy on GaAs substrates. The optimal isolation is provided by damaging patterned areas by 100 keV Ar ions implanted at room temperature using fluence of 2 × 10 15 cm −2 , and then annealing the samples in 365 °C for 30 min. The damage build-up and annealing is studied by channeling Rutherford backscattering spectrometry (RBS) and compared to sheet resistance measurements. Only a low level of damage annealing can be seen in RBS for the post-implant annealed samples, but for Ar fluence higher than 2 × 10 14 cm −2 , a strong electrical resistivity increase can still be achieved

  9. Thermal Modeling of GaN HEMTs on Sapphire and Diamond

    National Research Council Canada - National Science Library

    Salm, III, Roman P

    2005-01-01

    Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN...

  10. Development of Passivation Technology for Improved GaN/AlGaN HEMT Performance and Reliability

    National Research Council Canada - National Science Library

    Abernathy, C. R; Hunter-Edwards, Angela

    2005-01-01

    .... As part of the recipe development we have studied fundamental characteristics of the native oxides on GaN and AlGaN surfaces using XPS and compared the results to oxides generated by exposure to UV...

  11. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  12. InAlGaN/GaN HEMTs at Cryogenic Temperatures

    Directory of Open Access Journals (Sweden)

    Ezgi Dogmus

    2016-06-01

    Full Text Available We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93 × 1013 cm−2 leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC and Radio frequency (RF characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (fT/fmax of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties.

  13. Focused Ion Beam Methods for Research and Control of HEMT Fabrication

    Science.gov (United States)

    Pevtsov, E. Ph; Bespalov, A. V.; Demenkova, T. A.; Luchnikov, P. A.

    2017-04-01

    The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.

  14. Saturation of THz detection in InGaAs-based HEMTs: a numerical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Mahi, A. [Centre Universitaire Nour Bachir, B.P. 900, 32000 El Bayadh (Algeria); Palermo, C., E-mail: christophe.palermo@umontpellier.fr [University of Montpellier, IES, UMR 5214, 34000 Montpellier (France); CNRS, IES, UMR 5214, 34000 Montpellier (France); Marinchio, H. [University of Montpellier, IES, UMR 5214, 34000 Montpellier (France); CNRS, IES, UMR 5214, 34000 Montpellier (France); Belgachi, A. [University of Bechar, Bechar 08000 (Algeria); Varani, L. [University of Montpellier, IES, UMR 5214, 34000 Montpellier (France); CNRS, IES, UMR 5214, 34000 Montpellier (France)

    2016-11-01

    By numerical simulations, we investigate the large-signal photoresponse of InGaAs high electron mobility transistors submitted to THz radiations. The used pseudo-2D hydrodynamic model considers electron density and velocity conservations equations. A third equation is solved, in order to describe average energy conservation or to maintain it constantly equal to its thermal equilibrium value. In both cases, the calculated photoresponse increases with the incoming power density for its smallest values. For the higher values, a saturation of the photoresponse is observed, in agreement with experimental results, only when the energy conservation is accounted for. This allows to relate the limitation of the transistor detection features to electron heating phenomenon.

  15. Savremene metode analize ulja u tehničkim sistemima / Modern methods of oil analysis in technical systems

    Directory of Open Access Journals (Sweden)

    Sreten R. Perić

    2010-01-01

    Full Text Available Analiza ulja na osnovu pravilno definisanog programa predstavlja veoma efikasan metod monitoringa stanja tehničkih sistema koji obezbeđuje rane upozoravajuće znake potencijalnih problema, koji vode ka otkazu i zastoju tehničkih sistema. Ova analiza je veoma efikasan alat programa za monitoring stanja tehničkih sistema. Mnogobrojni uređaji i testovi za analizu ulja omogućavaju kvalitetan monitoring i dijagnosticiranje problema koji nastaju u procesu podmazivanja. Korišćenjem programa za analizu motornih ulja: skraćuje se neplanirano vreme otkaza vozila, poboljšava pouzdanost vozila, produžava radni vek motora, optimizira interval zamene ulja i smanjuju troškovi održavanja vozila. / Different technical systems require an appropriate lubricant to be used at an appropriate place, at appropriate time and in appropriate quantity. Determination of technical systems condition has a very important role in the development of theory and practice of friction, wear and lubrication. Lubricant is, as a contact element of tribomechanical systems, a carrier of information about the state of the whole system, from the aspect of tribological and other ageing processes. The analysis of oils, based on a properly defined program, thus represents a very effective method for monitoring the condition of technical systems, which ensures early warning signals of potential problems that could lead to failure and break down of technical systems. Introduction It is not always simple to determine a type of lubricant, frequency of lubrication and the quantity of lubricant to be used. The optimal recommendation would be to follow specifications of technical system manufacturers, experience, lab research or professional recommendation of lubricant suppliers. Rational lubricant consumption can be obtained by timely oil replacement, which then enables a maximum possible period of use as well as high-quality lubrication. Since the primary role of lubricants is to reduce negative effects of tribological processes related to friction, wear and temperature increase in tribomechanical systems, all types of maintenance include lubrication as a very important part of the whole procedure. On the other hand, lubricant is, as a contact element of the system, a carrier of information about the condition of the whole system, from the aspect of tribological and other ageing processes. Therefore, an analysis of oils, based on a properly defined program, represents a very effective method for monitoring the condition of technical systems, which ensures early warning signals of potential problems that could lead to failure and break down of technical systems. Besides mechanical components in a system structure, the condition of lubricant itself is also affected, which leads to a loss of lubricating properties. Contamination and degradation of lubricating oils There are numerous opportunities for contamination and degradation of lubricating oils. Contamination and degradation of oil exploitation cannot be completely prevented, but can be significantly reduced, which is very important both for oil and for a technical system itself. The rate and degree of degradation of oil are proportional to the rate and extent of contamination. It is therefore important to prevent rapid contamination of oil, before and during use. The spectrum of oil contaminants is considerably wide. Any contaminant destructive impact on oil, reducing its physical-chemical and working properties, results in shortening its service life as well as the service life of the technical system in question. During oil exploitation, changes occur in: chemical compositions and properties of base oils, chemical compositions and properties of additives, and consequently chemical compositions of oils in general, as a result of contamination and degradation. The most significant oil contaminants are base oils degradation products, additives degradation products, metal particles as a result of wear processes, solid particles from the environment, water and products of fuel combustion. During the operation the following changes occur: contamination of oil by the products of its own degradation, by products of incomplete combustion of fuel and by contaminants of various origin. The main objectives of the analysis and monitoring of oil exploitation in vehicles The main objectives of the analysis and monitoring of oil exploitation in vehicles are: - analysis of system element wear processes, - analysis of lubricant contamination processes, - monitoring changes in the properties of lubricants in order to optimize the life of system functionality control (penetration of contaminants, temperature and pressure, filter efficiency, etc. and - determining the extent of damage and causes of failure. The analysis of the contents of different metals in lubricants is very important. Metal particles are abrasive, and act as catalysts in oil oxidation. In motor oils, they can originate from additives, wear processes, fuel, air and cooling liquid. Metals from additives may be Zn, Ca, Ba, or Mg and they indicate additive deterioration. Metals originating from wear are: Fe, Pb, Cu, Cr, Al, Mn, Ag, Sn, and they point to increased wear in these systems. The elements originating from cooling liquids are Na and B, and their increased content indicates the penetration of cooling liquid in the lubricant. The increased content of Si or Ca, which originate from the air, points to a malfunction of the air filter. Condition monitoring through oil analysis tests There are many different types of oil analysis tests that are used to evaluate lubricants. The tests must cover three areas: technical system condition, contamination condition, and lubricant condition. From the technical system condition aspect, attention should be paid to the presence of any metal particles in oil and the tendencies in their change. The second focus would be the lubricant condition, especially viscosity change, increase in oxidation, and signs of additive depletion. The third focus would be impurities, where the emphasis should be placed on particle number, water content and metal impurities. Theoretically, oil analyses are divided into three classes. In reality, all three condition-monitoring classes are interrelated and must be considered as a whole. For example, an increase in viscosity could be an indication that a lubricant is oxidizing. But oxidation could be an incorrect conclusion, if there is no indication of an increasing oxidation tendency obtained either by the acid number (AN values analysis or the Fourier Transform-Infrared (FT-IR analysis. Lubricant monitoring enables its refreshing or replacement before serious technical system damage occurs. If damage is noticed in the course of operation, and is caused by impurities or lubricant problems, the technical system condition can be monitored and the system may be shut down immediately to minimize damage. There are the two types of alarms, i.e. warning signs used in oil analysis: absolute and statistical alarms. An effective oil analysis relies on the combination of both types. The warning limit is the absolute alarm. The statistical tendency takes into account variability based on oil sampling and its contamination and represents the standard deviation. The deviation from the normal variability indicates serious problems, which is the first signal for taking action and dealing with the problem. As the deviation tendency approaches the warning limit, oil replacement, oil purification or a system inspection is required. Metal particles content and viscosity or some other parameters can be tested. The normal variability range takes into account minor variations caused by analytical accuracy, sample homogeneity, etc. Statistical alarms, which provide the earliest possible warning without false alarms, are difficult to achieve. The factors such as oil adding or changing, filter changes and a sampling technique can distort the results. The following tests are most frequently used in technical system condition monitoring: - Spectrometric Analysis, - Analytical Ferrography, - Rotrode Filter Spectroscopy (RFS, - Infrared Analysis (FT-IR, - Viscosity, - Total acid number (TAN, - Total Base Number (TBN - Water and Particle Count.

  16. PROMENE KRVNOG PRITISKA U TOKU TESTA FIZIČKIM OPTEREĆENJEM KOD NORMOTENZIVNIH I HIPERTENZIVNIH REKREATIVACA

    Directory of Open Access Journals (Sweden)

    Mirko Šaranović

    2008-08-01

    Full Text Available Background. Arterial hypertension is a leading cause of morbidity in developed countries. It often decreases functional capacities of the cardiovascular system. Changes of pressure during physical exercise are a very significant a prognostic factor. Aim. The aim of this investigation was to assess changes of blood pressure and heart rate during exercise in normotensive and hypertensive men involved in recreational physical activity. Methods. The study included 90 young men (aged 30-40 years involved in recreation (60 with hypertension, 30 with normal pressure. The bicycle ergometer test was performed after rest, the load increased gradually from 50 to 125W. Blood pressure and heart rate were measured at rest and during the exercise. Results. Systolic and diastolic pressure increased signifi cantly in both groups during the ergometry test, compared to the values at rest. This increase was higher among hypertensive men for every graduation of test load (p<0.05. Heart rate was similar in both groups at rest, but higher values were noted among hypertensive men (p<0.05.

  17. Growth of a plasmid-bearing (pYV) Yersinia pestis KIM5 in retail raw ground pork

    Science.gov (United States)

    Yersinia pestis can cause oro-pharyngeal plague as a result of consumption or handling of meat from infected animals. Thus, food naturally or intentionally contaminated can have a role in the dissemination of human plague. The growth of a conditionally virulent plasmid (pYV)-bearing rifampicin-res...

  18. VizieR Online Data Catalog: Low-resolution near-infrared stellar spectra from CIBER (Kim+, 2017)

    Science.gov (United States)

    Kim, M. G.; Lee, H. M.; Arai, T.; Bock, J.; Cooray, A.; Jeong, W.-S.; Kim, S. J.; Korngut, P.; Lanz, A.; Lee, D. H.; Lee, M. G.; Matsumoto, T.; Matsuura, S.; Nam, U. W.; Onishi, Y.; Shirahata, M.; Smidt, J.; Tsumura, K.; Yamamura, I.; Zemcov, M.

    2017-06-01

    We present flux-calibrated near-infrared spectra of 105 stars from 0.8{skin, we do not use the first flight data in this work. The star spectral types are determined by fitting known spectral templates to the measured LRS spectra. We use the Infrared Telescope Facility (IRTF) and Pickles 1998 (Cat. J/PASP/110/863) templates for the SED fitting. The SpeX instrument installed on the IRTF observed stars using a medium-resolution spectrograph (R=2000). The template library contains spectra for 210 cool stars (F to M type) with wavelength coverage from 0.8 to 2.5μm (Cushing 2005ApJ...623.1115C; Rayner 2009ApJS..185..289R). The Pickles library is a synthetic spectral library that combines spectral data from various observations to achieve wavelength coverage from the UV (0.115μm) to the near-infrared (2.5μm). It contains 131 spectral templates for all star types (i.e., O to M type) with a uniform sampling interval of 5Å. (6 data files).

  19. Estimation of spawning area of Pisodonophis sangjuensis Ji and Kim, 2011 (Pisces: Ophichthidae) based on leptocephali size and distribution

    Science.gov (United States)

    Ji, Hwan-Sung; Hwang, Kangseok; Choi, Jung Hwa; Cha, Hyung-Kee; Kim, Jin-Koo

    2017-06-01

    Pre-metamorphic leptocephali of Pisodonophis sangjuensis ( n = 91, 10.4-90.2 mm in total length, TL) were collected in the East China Sea for the first time. Pre-metamorphic leptocephali of P. sangjuensis, which were identified using mitochondrial DNA cytochrome c oxidase subunit I gene (mtDNA COI), are characterized by various combinations of morphological characters: 8 moderate to pronounced gut loops with the kidney terminating on the 6-7th loops; and 8 subcutaneous pigment patches on the tail just ventral to the notochord. Pisodonophis sangjuensis leptocephali were more numerously collected offshore than inshore around Jeju Island. The smallest leptocephali ( 100.0 mm TL) were collected from around Jeju Island and the southern coast of Korea. Our findings indicate that P. sangjuensis spawns offshore south of Jeju Island that is an area associated with high water temperature, and then the hatched leptocephali are transported to Jeju Island or the southern coast of Korea by the Tsushima Warm Current.

  20. Support for harmful treatment and reduction of empathy toward blacks: "Remnants" of stereotype activation involving Hurricane Katrina and "Lil' Kim"

    NARCIS (Netherlands)

    Johnson, J.D.; Bushman, B.J.

    2008-01-01

    Two experiments involving White participants tested the influence of media-based Black stereotypes on subsequent responses to Black and White persons-in-need. Experiment 1 showed that priming the "Black criminal" stereotype through exposure to photographs of Blacks looting after Hurricane Katrina

  1. Report on the Second KIMS-CNA Conference: The PLA Navys Build-Up and ROK-USN Cooperation

    Science.gov (United States)

    2009-02-01

    Modernization (London and Washington, DC: Kegan Paul International and The AEI Press, 1996), p. 274. See also his “China’s Push Through the South China Sea...to change its nature of the PLA Navy naval strategy from “brown water” force to “ green /blue water” navy enable to secure its vast maritime...and “full ocean-going green water fleet.” It is conceivable that the Chinese navy’s goal of its operational capability is not “blue water navy,” but

  2. VizieR Online Data Catalog: ChaMP X-ray point source catalog (Kim+, 2007)

    Science.gov (United States)

    Kim, M.; Kim, D.-W.; Wilkes, B. J.; Green, P. J.; Kim, E.; Anderson, C. S.; Barkhouse, W. A.; Evans, N. R.; Ivezic, Z.; Karovska, M.; Kashyap, V. L.; Lee, M. G.; Maksym, P.; Mossman, A. E.; Silverman, J. D.; Tananbaum, H. D.

    2009-01-01

    We present the Chandra Multiwavelength Project (ChaMP) X-ray point source catalog with ~6800 X-ray sources detected in 149 Chandra observations covering ~10deg2. The full ChaMP catalog sample is 7 times larger than the initial published ChaMP catalog. The exposure time of the fields in our sample ranges from 0.9 to 124ks, corresponding to a deepest X-ray flux limit of f0.5-8.0=9x10-16ergs/cm2/s. The ChaMP X-ray data have been uniformly reduced and analyzed with ChaMP-specific pipelines and then carefully validated by visual inspection. The ChaMP catalog includes X-ray photometric data in eight different energy bands as well as X-ray spectral hardness ratios and colors. To best utilize the ChaMP catalog, we also present the source reliability, detection probability, and positional uncertainty. (10 data files).

  3. VizieR Online Data Catalog: NIR polarimetric study in the LMC N159/N160 field (Kim+, 2017)

    Science.gov (United States)

    Kim, J.; Jeong, W.-S.; Pyo, J.; Pak, S.; Park, W.-K.; Kwon, J.; Tamura, M.

    2018-04-01

    Simultaneous JHKs polarimetric observations of the N159/N160 c were performed on 2007 February 3 and 5. We used the near-infrared camera SIRIUS (Nagayama et al. 2003SPIE.4841..459N) and the polarimeter SIRPOL (Kandori et al. 2006SPIE.6269E..51K) of the Infrared Survey Facility (IRSF) 1.4 m telescope at the South African Astronomical Observatory in Sutherland, South Africa. The camera has a field of view of 7.7"x7.7" and a pixel scale of 0.45"/pixel. One set of observations for a target field consisted of 20 s exposures at 10 dithered positions for four wave-plate angles (0°, 45°, 22.5°, and 67.5°) in the J, H, and Ks bands, and the whole sequence is repeated 10 and 9 times for the N159 and N160 fields centered at (α, δ)2000=(5h39m37.1s, -69°43'45.1") and (5h40m05.6s, -69°36'25.8"), respectively. (2 data files).

  4. ANALYSIS OF CORNEAL ASTIGMATISM BEFORE AND AFTER PTERYGIUM SURGERY- A PROSPECTIVE STUDY IN PATIENTS ATTENDING KIMS, HUBLI

    Directory of Open Access Journals (Sweden)

    Y. B. Bajantri

    2017-10-01

    Full Text Available BACKGROUND Pterygium is a very common degenerative condition seen in Indian subcontinent. It is a wing-shaped fibrovascular encroaching up on the cornea from either sides. The prevalence rate is 5.2%. Pterygium is known to affect refractive astigmatism. The induced astigmatism may become significant to cause visual distortion, even though the pterygium remains distant from visual axis induced astigmatism maybe either “with-the-rule” or “against-the-rule.” The aim of the study is to- 1. Compare preoperative with postoperative astigmatism in case of pterygium. 2. Assess the amount of astigmatism in case of pterygia of different lengths measured from the limbus over the cornea. MATERIALS AND METHODS The study included 70 eyes of 70 patients with primary pterygium. Preoperative evaluation included pterygium size, visual acuity, keratometry and refraction with subjective correction. Patients included in the study were divided into three groups based on length of pterygium encroaching on cornea (1 to 2 mm, 2 to 3 mm, >3 mm. Each eye underwent bare sclera pterygium excision. Postoperative visual acuity, keratometry and refraction were evaluated on 1st day, at the end of 1st week, 4 th week and 9th week. The pre and postoperative results were compared and analysed. RESULTS An average of all 70 cases with mean pterygium length 3.2 mm had a mean keratometry astigmatism of 1.84 ± 0.89D preoperatively and 0.514 ± 0.52D postoperatively indicating a reduction of pterygium-induced corneal astigmatism by 1.45 ± 0.77D (p value <0.0001, which was statistically significant. CONCLUSION Pterygium-induced corneal astigmatism is directly proportional to the size of the pterygium. Thus, early surgical excision reduces the corneal astigmatism, and hence, improves the visual acuity.

  5. Subsurface temperature estimation from climatology and satellite SST for the sea around Korean Peninsula 1Bong-Guk, Kim, 1Yang-Ki, Cho, 1Bong-Gwan, Kim, 1Young-Gi, Kim, 1Ji-Hoon, Jung 1School of Earth and Environmental Sciences, Seoul National University

    Science.gov (United States)

    Kim, Bong-Guk; Cho, Yang-Ki; Kim, Bong-Gwan; Kim, Young-Gi; Jung, Ji-Hoon

    2015-04-01

    Subsurface temperature plays an important role in determining heat contents in the upper ocean which are crucial in long-term and short-term weather systems. Furthermore, subsurface temperature affects significantly ocean ecology. In this study, a simple and practical algorithm has proposed. If we assume that subsurface temperature changes are proportional to surface heating or cooling, subsurface temperature at each depth (Sub_temp) can be estimated as follows PIC whereiis depth index, Clm_temp is temperature from climatology, dif0 is temperature difference between satellite and climatology in the surface, and ratio is ratio of temperature variability in each depth to surface temperature variability. Subsurface temperatures using this algorithm from climatology (WOA2013) and satellite SST (OSTIA) where calculated in the sea around Korean peninsula. Validation result with in-situ observation data show good agreement in the upper 50 m layer with RMSE (root mean square error) less than 2 K. The RMSE is smallest with less than 1 K in winter when surface mixed layer is thick, and largest with about 2~3 K in summer when surface mixed layer is shallow. The strong thermocline and large variability of the mixed layer depth might result in large RMSE in summer. Applying of mixed layer depth information for the algorithm may improve subsurface temperature estimation in summer. Spatial-temporal details on the improvement and its causes will be discussed.

  6. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bagnall, Kevin R.; Wang, Evelyn N. [Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2016-06-15

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E{sub 2} high and A{sub 1} (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

  7. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Bagnall, Kevin R.; Wang, Evelyn N.

    2016-01-01

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E_2 high and A_1 (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

  8. 11.9 W output power at 4 GHz from 1 mm AlGaN/GaN HEMT

    NARCIS (Netherlands)

    Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

    2008-01-01

    A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160

  9. Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

    Science.gov (United States)

    Chou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesús A.; Chang, Edward Yi

    2018-05-01

    This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

  10. Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Lu, C Y; Chang, E Y; Bahat-Treidel, E; Hilt, O; Lossy, R; Chaturvedi, N; Würfl, J; Tränkle, G

    2010-01-01

    In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate—drain spacing, source—gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices

  11. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    family have (0001) interfaces which bear a surface charge σ0 that results from the polarizations of the two alloys at the interface...function of the Al content of the AlGaN barrier, as well as its thickness (Kocan, 2003; Lenka and Panda , 2011). In my dissertation, the surface...incorporation.” Applied Physics Letters, 71 (1997): 1359. Lenka, T. R., and Panda , A. K.. “Effect of structural parameters of 2DEG and C~V

  12. High-performance CPW MMIC LNA using GaAs-based metamorphic HEMTs for 94-GHz applications

    International Nuclear Information System (INIS)

    Ryu, Keun-Kwan; Kim, Sung-Chan; An, Dan; Rhee, Jin-Koo

    2010-01-01

    In this paper, we report on a high-performance low-noise amplifier (LNA) using metamorphic high-electron-mobility transistor (MHEMT) technology for 94-GHz applications. The 100 nm x 60 μm MHEMT devices for the coplanar MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm and an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency (f T ) and the maximum oscillation frequency (f max ) were 195 GHz and 305 GHz, respectively. Based on this MHEMT technology, coplanar 94-GHz MMIC LNAs were realized, achieving a small signal gain of more than 13 dB between 90 and 100 GHz and a small signal gain of 14.8 dB and a noise figure of 4.7 dB at 94 GHz.

  13. Transport Equations for CAD Modeling of Al(x)Ga(1-x)N/GaN HEMTs

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

  14. Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

    Science.gov (United States)

    Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

    2017-12-01

    This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

  15. The prevalence of musculoskeletal disorders and occupational risk factors in Kashan SAIPA automobile industry workers by key indicator method (KIM), 1390

    OpenAIRE

    2012-01-01

    Introduction: work related musculoskeletal disorders are the most wide spread type of occupational diseases among workers. Awkward body postures during work and manual material handling are among the most important risk factors of musculoskeletal disorders in different jobs. Due to importance of recognizing these factors prevalence and risk factor of work related musculoskeletal disorders, this research was aimed to study the among employees of Kashan City’s Saipa automobile industry in 2...

  16. First experience under the exemption regime of EC Regulation 1228/2003 on Conditions for Access to the Network of Cross-Border Exchanges in Electricity / Kim Talus

    Index Scriptorium Estoniae

    Talus, Kim

    2005-01-01

    23. aprillil 2005 Euroopa Komisjoni poolt vastu võetud otsusest anda roheline tuli Estlink'i projektile, mis tähendab koostööd Eesti ja Soome elektrivõrkude vahel ; Euroopa Komisjon võttis aluseks regulatsiooni nr. 1228/2003 artikli 7

  17. Whole-genome sequencing reveals that Shewanella haliotis Kim et al. 2007 can be considered a later heterotypic synonym of Shewanella algae Simidu et al. 1990.

    Science.gov (United States)

    Szeinbaum, Nadia; Kellum, Cailin E; Glass, Jennifer B; Janda, J Michael; DiChristina, Thomas J

    2018-04-01

    Previously, experimental DNA-DNA hybridization (DDH) between Shewanellahaliotis JCM 14758 T and Shewanellaalgae JCM 21037 T had suggested that the two strains could be considered different species, despite minimal phenotypic differences. The recent isolation of Shewanella sp. MN-01, with 99 % 16S rRNA gene identity to S. algae and S. haliotis, revealed a potential taxonomic problem between these two species. In this study, we reassessed the nomenclature of S. haliotis and S. algae using available whole-genome sequences. The whole-genome sequence of S. haliotis JCM 14758 T and ten S. algae strains showed ≥97.7 % average nucleotide identity and >78.9 % digital DDH, clearly above the recommended species thresholds. According to the rules of priority and in view of the results obtained, S. haliotis is to be considered a later heterotypic synonym of S. algae. Because the whole-genome sequence of Shewanella sp. strain MN-01 shares >99 % ANI with S. algae JCM 14758 T , it can be confidently identified as S. algae.

  18. Acceptance of Gold Medal From the Catalan Society of Transplantation by Drs. Lorraine Racusen and Kim Solez - With Remarks on the Banff Meeting Spirit.

    Science.gov (United States)

    Racusen, L C; Solez, K

    2017-12-01

    The awarding of the gold medal from the Catalan Society of Transplantation to the organizers of the Banff Transplant Pathology meetings is an opportunity to acknowledge gratitude to all the people who have helped make these meetings a success over the past 26 years. Other large organizations have given up consensus conferences, but the Banff consensus process is thriving. It is unusual for any organization to have the same leadership for 26 years. It has only worked for the Banff meetings because the leadership was flexible and able to change with the times. People have often talked about the "special Banff spirit." This year's meeting gave us the opportunity to examine this spirit in detail by analyzing how the meeting consensus sessions and social events functioned. The meeting has never used expert facilitators, but instead has employed experts within the transplant pathology community to moderate discussions. The size of the working sessions is important; they have usually been less than 150 people, which is within "Dunbar's number," meaning that in gatherings of that size one can have empathetic feeling for all the people there. In larger gatherings one loses that "we are all in this together" feeling and people begin thinking "us" versus "them" thoughts. For "unknown" young people the ability to easily talk to well-known leaders in the field is rewarding and keeps them coming back for more time after time. Images of the social events do not suggest any sort of hierarchy; everyone interacts with everyone else. Copyright © 2017 The Authors. Published by Elsevier Inc. All rights reserved.

  19. A. Kim, k.f. Anderson, j. Berliner, j. Hassan, j. Jensen, h.j. Mertz, h. Pietsch, a. Rao, R. Scherer, and a. Sutterfield.

    Science.gov (United States)

    Kim, A; Anderson, K F; Berliner, J; Hassan, J; Jensen, J; Mertz, H J; Pietsch, H; Rao, A; Scherer, R; Sutterfield, A

    2003-10-01

    In this study, three dummies were evaluated on the component level and as a whole. Their responses were compared with available volunteer and embalmed Post Mortem Human Subject (PMHS) data obtained under similar test conditions to evaluate their biofidelity. The volunteer and PMHS data, used as comparators in this study, were used previously to establish some of the biofidelity requirements of the Hybrid III. The BioRID II, the Hybrid III, and the RID2 were all subjected to rear impact HYGE sled tests with deltaVs of 17 and 28 km/hr to determine their biofidelity in these conditions. A static pull test, where a load was manually applied to the head of each dummy, was used to evaluate the static strength of their necks in flexion and extension. Finally, pendulum tests were conducted with the Hybrid III and RID2 to evaluate the dynamic characteristics of their necks in flexion and extension. The sled test results indicate that out of the three dummies, the overall flexibility of the Hybrid III is comparable to that of the volunteer anticipating the impact. The overall flexibilities of the BioRID II and the RID2 are greater than those of all the comparators used in this study (the tensed volunteer and the two embalmed PMHSs). The responses of the Hybrid III are closer to those of the tensed volunteer than those of the PMHSs. The responses of the BioRID II and the RID2 are closer to those of the PMHSs than to the tensed volunteer.

  20. RAZLIKE U NEKIM MOTORIČKIM SPOSOBNOSTIMA KOD UČENIKA OBUHVAĆENIM NASTAVNIM I VANNASTAVNIM AKTIVNOSTIMA IZ KOŠARKE

    Directory of Open Access Journals (Sweden)

    Miodrag Kocić

    2005-05-01

    Full Text Available The aim of this research was to determine the effects that the third class of physical education during one term had on the mobility of the students tested. 101 students, who were divided into two groups, took part in the research. The first group, which was the control group, was made up of 50 students and the second group was made up of the remaining 51 students who were members of the basketball section. The system for measuring mobility encompassed six different disciplines: the high jump, 20 meters high start race, pull-ups, press-ups, forward bend (and lifting the upper part of the body on the bench. All the results of the research were processed in a usual way giving the information on central and dispersion statistics for all disciplines. The differences between the groups were determined by discriminative analysis

  1. Upotreba Kaizen filozofije u upravljačkim strukturama kompanija u Srbiji / The Use of Keizen Philosophy in the Managing Structures in the Companies in Serbia

    Directory of Open Access Journals (Sweden)

    Simona Žikić

    2016-11-01

    Full Text Available In the moment when there is a question mark over the economy of every country and the markets are not stable, but ever changing, moving forward, and/or collapsing, one of the most successful approaches to the survival and improvement of the management of the companies is Keizen concept. Keizen concept of management is philosophy that is initially used in Japan, where it comes from, but in other places all around the world as well, mostly in America and the countries in Western civilization. Keizen philosophy is the concept of continuous improvement, which, strategically observed, contributes improvement and prosperity of the companies. Having in mind its occurrence, the first results of Keizen philosophy’s approach can be identified in the development of Japanese economy, which reached unbelievable results and improvement only few years after the Second World War. Japanese companies very soon became competitive at the global market thanks to Kaizen philosophy, no matter the fact that his approach includes managing concepts and concepts of business organization which are diametrically opposite to the current dominant opinion and application of the concepts of managing business organization from the Western companies. This is the reason why the idea of this paper is to show the main values that are in the core of Kaizen philosophy and to show that the application of this business  concept is possible in Serbia, besides the small number of those who already did it. The aim of this paper is to bring closer the importance of the development of human resources and their influence on the structure of the companies’ management, because only with the human resources department based well, there is a possibility of Keizen philosophy application.

  2. Introductory Statement by Won-Soo Kim [International Conference on Nuclear Security: Commitments and Actions, Vienna (Austria), 5-9 December 2016

    International Nuclear Information System (INIS)

    Kim, Won-Soo

    2017-01-01

    We need to treat WMD risks and threats holistically. Lessons learned in one area can be emulated in another. The IAEA has learned valuable lessons through its own emergency management work and partnership with other UN agencies, including through the UN Counter-Terrorism Implementation Task Force. These lessons could be beneficial in developing response mechanisms for biological incidents.

  3. Analisis Kandungan Timbal (Pb) Dan Kadmium (Cd) Pada Kangkung Air (Ipomoea aquatica Forssk) DAN kangkung Darat (Ipomoea reptans Poir) Di Daerah Mabar-Kim Secara Spektrofotometri Serapan Atom

    OpenAIRE

    Sari, Arisa Dian

    2011-01-01

    Kangkung is a kind of vegetables that is commonly consumed by people and it contains a lot of vitamin A. Surrounding the Industry Area in Medan such as Mabar, vegetables are planted by people, one of them is kangkung. Since the industries growth in the area of the vegetables are expanded, it is wondered that the kangkung has been contaminated by lead and cadmium metals. The purpose of this research is to know the lead and cadmium metals of water kangkung and land kangkung planted in Mabar the...

  4. Diseño de topologías rectificadoras e inversoras clase E basadas en tecnologías GaN HEMT y E-pHEMT para aplicaciones de transmisión inalámbrica y reciclado de energía. Design of rectifying and inverter class E topologies on GaN and E-pHEMT devices for wireless powering and energy harvesting applications

    OpenAIRE

    Ruiz Lavín, María de las Nieves

    2017-01-01

    RESUMEN: En el campo de RF/Microondas, se vienen desarrollando sistemas de transmisión inalámbrica eficientes, que permitan reducir el elevado consumo eléctrico de las estaciones base de telefonía móvil, aumentar la duración de las baterías en los terminales, así como alimentar dispositivos de forma inalámbrica. En este sentido, en esta tesis se han propuesto distintas topologías inversoras y rectificadoras de alta eficiencia, operando en clase E, para su uso en la transmisión eficiente de se...

  5. Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

    Science.gov (United States)

    Sun, Shu-Xiang; Wei, Zhi-Chao; Xia, Peng-Hui; Wang, Wen-Bin; Duan, Zhi-Yong; Li, Yu-Xiao; Zhong, Ying-Hui; Ding, Peng; Jin, Zhi

    2018-02-01

    Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the Development Fund for Outstanding Young Teachers in Zhengzhou University of China (Grant No. 1521317004).

  6. Influence of a BGaN back-barrier on DC and dynamic performances of an AlGaN/GaN HEMT: simulation study

    Science.gov (United States)

    Guenineche, Lotfi; Hamdoune, Abdelkader

    2016-05-01

    In this paper, we study the effect of a BGaN back-barrier on the DC and RF performances of an AlGaN/GaN high electron mobility transistor. Using TCAD Silvaco, we examine some variations of thickness and boron concentration in the BGaN back-barrier layer. First, we fix the thickness of the back-barrier layer at 5 nm and we vary the concentration of the boron in BGaN from 1% to 4%. Second, we fix the concentration of the boron in BGaN to only 2% and we vary the thickness of the back-barrier layer from 20 nm to 110 nm. The BGaN back-barrier layer creates an electrostatic barrier under the channel layer and improves the performances of the device by improving the electron confinement in the two-dimensional electron gas. The DC and AC characteristics are improved, respectively, by a greater concentration of boron and by a thicker BGaN layer. For 4% boron concentration and 5 nm thick back-barrier layer, we obtain a maximum drain current of 1.1 A, a maximum transconductance of 480 mS mm-1, a cut-off frequency of 119 GHz, and a maximum oscillation frequency of 311 GHz.

  7. MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

    Science.gov (United States)

    2017-10-16

    ORGANIZATION REPORT NUMBER University of Colorado 1111 Engineering Drive, Mechanical Engineering , 427 UCB Boulder, CO 80309 9. SPONSORING/MONITORING AGENCY... nanotechnology 2015, 10, 701-6. 4. Regner, K. T.; Sellan, D. P.; Su, Z.; Amon, C. H.; McGaughey, A. J.; Malen, J. A., Broadband Phonon Mean Free

  8. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance

    Science.gov (United States)

    2012-10-01

    right by a pitch (P) and subsequently summed to provide a multi-gate superimposed temperature distribution ( TMG (x)). An example is shown in figure...temperature rise over the coolant, or the difference between the centerline multi gate junction temperature on the upper surface ( TMG ,GaN(0)) of the GaN...TC coolant temperature (°C) TCP(x) cold plate temperature distribution (°C) TGaN(x,y) temperature distribution within GaN (°C) TMG (x) multiple gate

  9. Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

    International Nuclear Information System (INIS)

    Kirste, Lutz; Lim, Taek; Aidam, Rolf; Mueller, Stefan; Waltereit, Patrick; Ambacher, Oliver

    2010-01-01

    A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Gonzalez-Posada, Fernando; Bardwell, Jennifer A.; Moisa, Simona; Haffouz, Soufien; Tang, Haipeng; Brana, Alejandro F.; Munoz, Elias

    2007-01-01

    The chemical composition of the AlGaN/GaN surface during typical process steps in transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps studied included organic solvent cleaning, 1:1 HCl:H 2 O dip, buffered oxide etch dip, oxygen plasma descum and rapid thermal annealing (RTA). The surface composition was calculated after correction for the interference of the Ga Auger lines in the N 1s portion of the spectra. The buffered oxide etched (BOE) surface showed a greater tendency for Al (compared to Ga) to be oxidized in the surface, under a layer of adventitious carbon. Three different treatments were found to yield a combination of low C and O levels in the surface. Both plasma cleaning and RTA were highly effective at reducing the carbon contamination of the surface, but did increase the oxygen levels. The RTA treated surface was found to have low levels of oxygen incorporation to a depth of 2-6 nm

  11. Off-state electrical breakdown of AlGaN/GaN/Ga(AlN HEMT heterostructure grown on Si(111

    Directory of Open Access Journals (Sweden)

    Shuiming Li

    2016-03-01

    Full Text Available Electrical breakdown characteristics of AlxGa1−xN buffer layers grown on Si(111 are investigated by varying the carbon concentration ([C]: from ∼1016 to 1019 cm−3, Al-composition (x = 0 and 7%, and buffer thickness (from 1.6 to 3.1 μm. A quantitative relationship between the growth conditions and carbon concentration ([C] is established, which can guide to grow the Ga(AlN layer with a given [C]. It is found that the carbon incorporation is sensitive to the growth temperature (T (exponential relationship between [C] and 1/T and the improvement of breakdown voltage by increasing [C] is observed to be limited when [C] exceeding 1019 cm−3, which is likely due to carbon self-compensation. By increasing the highly resistive (HR Al0.07Ga0.93N buffer thickness from 1.6 to 3.1 μm, the leakage current is greatly reduced down to 1 μA/mm at a bias voltage of 1000 V.

  12. UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

    Science.gov (United States)

    kumar, Sandeep; Pratiyush, Anamika Singh; Dolmanan, Surani B.; Tripathy, Sudhiranjan; Muralidharan, Rangarajan; Nath, Digbijoy N.

    2017-12-01

    We demonstrate an InAlN/GaN-on-Si high electron mobility transistor based UV detector with a photo-to-dark current ratio of >107. The Ti/Al/Ni/Au metal stack was evaporated and thermal annealed rapidly for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface, while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. A spectral responsivity (SR) of 32.9 A/W at 367 nm was measured at 5 V. A very high photo-to-dark current ratio of >107 was measured at a bias of 20 V. The photo-to-dark current ratio at a fixed bias was found to be decreasing with an increase in the recess length of photodetectors. The fabricated devices were found to exhibit a UV-to-visible rejection ratio of >103 with a low dark current of < 32 pA at 5 V. Transient measurements showed rise and fall times in the range of 3-4 ms. The gain mechanism was investigated, and carrier lifetimes were estimated which matched well with those reported elsewhere.

  13. Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

    Science.gov (United States)

    Jiang, H.; Li, X.; Wang, J.; Zhu, L.; Wang, H.; Liu, J.; Wang, M.; Yu, M.; Wu, W.; Zhou, Y.; Dai, G.

    2017-06-01

    AlGaN/GaN high-electron mobility transistor’s (HEMT’s) off-state breakdown is investigated using conventional three-terminal off-state breakdown I-V measurement. Competition between gate leakage and source-injection buffer leakage (SIBL) is discussed in detail. It is found that the breakdown is dominated by source-injection which is sensitive to gate voltage and gate length at large gate-to-drain spacing (Lgd > 7μm), where a threshold drain voltage of the occurrence of the SIBL current in GaN buffer exists, and after this threshold voltage the SIBL current continually increased till the buffer breakdown. Our analysis showed that due to the punch-through effect in the buffer, a potential barrier between 2DEG and GaN buffer at the source side mainly controlled by the drain voltage determines the buffer leakage current and the occurrence of the following buffer breakdown, which could explain the experimentally observed breakdown phenomenon.

  14. Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

    Science.gov (United States)

    Upadhyay, Bhanu B.; Takhar, Kuldeep; Jha, Jaya; Ganguly, Swaroop; Saha, Dipankar

    2018-03-01

    We demonstrate that N2 and O2 plasma treatment followed by rapid thermal annealing leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor. Both the source/drain access and gate regions respond positively improving the transistor characteristics albeit to different extents. Characterizations indicate that the surface show the characteristics of that of a higher band-gap material like AlxOy and GaxOy along with N-vacancy in the sub-surface region. The N-vacancy leads to an increased two-dimensional electron gas density. The formation of oxides lead to a reduced gate leakage current and surface passivation. The DC characteristics show increased transconductance, saturation drain current, ON/OFF current ratio, sub-threshold swing and lower ON resistance by a factor of 2.9, 2.0, 103.3 , 2.3, and 2.1, respectively. The RF characteristics show an increase in unity current gain frequency by a factor of 1.7 for a 500 nm channel length device.

  15. Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Yunin, P. A., E-mail: yunin@ipmras.ru; Drozdov, Yu. N.; Drozdov, M. N.; Korolev, S. A.; Okhapkin, A. I.; Khrykin, O. I.; Shashkin, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-11-15

    A method for the in situ passivation of GaN-based structures with silicon nitride in the growth chamber of a metal organic vapor phase epitaxy (MOVPE) reactor is described. The structural and electrical properties of the obtained layers are investigated. The in situ and ex situ passivation of transistor structures with silicon nitride in an electron-beam-evaporation device are compared. It is shown that ex situ passivation changes neither the initial carrier concentration nor the mobility. In situ passivation makes it possible to protect the structure surface against uncontrollable degradation upon the finishing of growth and extraction to atmosphere. In the in situ passivated structure, the carrier concentration increases and the mobility decreases. This effect should be taken into account when manufacturing passivated GaN-based transistor structures.

  16. Amplitude distributions of dark counts and photon counts in NbN superconducting single-photon detectors integrated with the HEMT readout

    Energy Technology Data Exchange (ETDEWEB)

    Kitaygorsky, J. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States); Słysz, W., E-mail: wslysz@ite.waw.pl [Institute of Electron Technology, PL-02 668 Warsaw (Poland); Shouten, R.; Dorenbos, S.; Reiger, E.; Zwiller, V. [Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft (Netherlands); Sobolewski, Roman [Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 (United States)

    2017-01-15

    Highlights: • A new operation regime of NbN superconducting single-photon detectors (SSPDs). • A better understanding of the origin of dark counts generated by the detector. • A promise of PNR functionality in SSPD measurements. - Abstract: We present a new operation regime of NbN superconducting single-photon detectors (SSPDs) by integrating them with a low-noise cryogenic high-electron-mobility transistor and a high-load resistor. The integrated sensors are designed to get a better understanding of the origin of dark counts triggered by the detector, as our scheme allows us to distinguish the origin of dark pulses from the actual photon pulses in SSPDs. The presented approach is based on a statistical analysis of amplitude distributions of recorded trains of the SSPD photoresponse transients. It also enables to obtain information on energy of the incident photons, as well as demonstrates some photon-number-resolving capability of meander-type SSPDs.

  17. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

    Science.gov (United States)

    Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

    2018-05-01

    In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

  18. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

  19. Review: Margaret A. Morrison, Eric Haley, Kim Bartel Sheehan & Ronal E. Taylor (2002. Using Qualitative Research in Advertising: Strategies, Techniques, and Applications / Shay Sayre (2001. Qualitative Methods for Marketplace Research

    Directory of Open Access Journals (Sweden)

    Susanne Friese

    2004-01-01

    Full Text Available The review discusses two books, both covering very similar contents and addressing more or less the same audience. The book by SAYRE is about the use of qualitative method in marketplace research in general and is aimed at marketing students and practitioners; the book by MORRISON, HALEY, SHEEHAN and TAYLOR focuses more specifically on one area of mar­keting, namely advertising research. MORRISON et al. provide the more practical perspective, a fact that is also reflected in the writing style of the book. It is stimulating to read, even for readers fa­miliar with qualitative methods. It provides insights from the perspective of advertising agency plan­ners and demonstrates how qualitative methods are applied in a commercial context. SAYRE, in comparison, provides more details and builds her book around five theoretical perspectives. It is writ­ten by an academic for a largely academic audi­ence, containing all the basics that one needs to know when embarking on a qualitative research project. It differs from other qualitative method books in that the various steps along the way are illustrated by examples from the field of marketing. The book will, therefore, resonate well with mar­ket­ing students. Nonetheless, both books can be recommended as text books for qualitative method courses in marketing—SAYRE's book for market­ing students in general, and MORRISON et al.'s book for students specializing in the field of adver­tising. When used in a course where students conduct a small scale research project on their own, both books need to be supplemented by further readings or teacher input. Specifically, the sections on qualitative data analysis are too thin in MORRISON et al. and too broad in SAYRE in order to be useful to students without further explanation and training. Nonetheless, the two books are the best I have seen so far when it comes to selecting a book to be used in a qualitative method course for marketing students. URN: urn:nbn:de:0114-fqs0401258

  20. Comment on "Combination of cupric ion with hydroxylamine and hydrogen peroxide for the control of bacterial biofilms on RO membranes by Hye-Jin Lee, Hyung-Eun Kim, Changha Lee [Water Research 110, 2017, 83-90]".

    Science.gov (United States)

    Chen, Long; Peng, Ying; Tang, Min; Wu, Feng

    2017-07-01

    The methodology employed by Lee et al. to terminate their bactericidal assays was found to be flawed via our demonstrations. Briefly, EDTA or sulfite combining with cupric ion did not fully terminate, and instead even boosted the P. aeruginosa death. We therefore suggested them to seek for other means of reaction termination, such as the combination of buffering agent PBS and Cu(II)-complexing agent EDTA. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Oral vaccination with LcrV from Yersinia pestis KIM delivered by live attenuated Salmonella enterica serovar Typhimurium elicits a protective immune response against challenge with Yersinia pseudotuberculosis and Yersinia enterocolitica.

    Science.gov (United States)

    Branger, Christine G; Torres-Escobar, Ascención; Sun, Wei; Perry, Robert; Fetherston, Jacqueline; Roland, Kenneth L; Curtiss, Roy

    2009-08-27

    The use of live recombinant attenuated Salmonella vaccines (RASV) synthesizing Yersinia proteins is a promising approach for controlling infection by Yersinia species. In this study, we constructed attenuated Salmonella strains which synthesize a truncated form of LcrV, LcrV196 and evaluated the immune response and protective efficacy elicited by these strains in mice against two other major species of Yersinia: Yersinia pseudotuberculosis and Yersinia enterocolitica. Surprisingly, we found that the RASV strain alone was sufficient to afford nearly full protection against challenge with Y. pseudotuberculosis, indicating the likelihood that Salmonella produces immunogenic cross-protective antigens. In contrast, lcrV196 expression was required for protection against challenge with Y. enterocolitica strain 8081, but was not sufficient to achieve significant protection against challenge with Y. enterocolitica strain WA, which expressed a divergent form of lcrV. Nevertheless, we are encouraged by these findings to continue pursuing our long-term goal of developing a single vaccine to protect against all three human pathogenic species of Yersinia.

  2. Exercise for frail elders Exercise for frail elders Best-Martini Elizabeth Kim A Product Botenhagen-Di Genova Human Kinetics £24.50 0 73603 687 3 0736036873.

    Science.gov (United States)

    2003-09-01

    Department of Health Publications Free 208 pp This guide provides practical advice on how to obtain information, services and equipment. It is aimed at people who are older, disabled or who have mental health problems and those who support them. Copies are available in Braille, audio cassette, disk, large print and in a range of languages. Tel: 0800 555777. www.doh.gov.uk /disabledguide.

  3. Report on the KIMS-CNA Conference (2nd): The PLA Navy’s Build-Up and ROK-USN Cooperation, Held in Seoul, Korea on 20 November 2008

    Science.gov (United States)

    2009-02-01

    Kegan Paul International and The AEI Press, 1996), p. 274. See also his "China’s Push Through the South China Sea: The Interaction of Bureaucratic and...to " green /blue water" navy enable to secure its vast maritime territorial claims with modern combat capability. For long time, the Chinese navy...operational capability placed somewhat between "coastal defense" and "full ocean-going green water fleet." It is conceivable that the Chinese navy’s

  4. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    International Nuclear Information System (INIS)

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  5. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

    International Nuclear Information System (INIS)

    Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2013-01-01

    AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

  6. Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

    2013-01-01

    V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. A Study of China’s Possible Military Intervention in the Event of a Sudden Change in North Korea

    Science.gov (United States)

    2011-06-10

    Kim Jong - nam , Kim Jong -chul or Kim Jong -un as Kim‘s successor. Some have asserted that there might not be a third generation of Kim ...The power struggle between Kim Jong - nam (eldest son) who is residing in China and Kim Jong -un has been observed in many places over time. Kim 29... Jong - nam , who is known to be receiving Chinese support, revealed his opposition to a third generation of dynastic succession in

  8. Kinase detection with gallium nitride based high electron mobility transistors.

    Science.gov (United States)

    Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

    2013-07-01

    A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

  9. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  10. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

    Science.gov (United States)

    Makowski, M S; Kim, S; Gaillard, M; Janes, D; Manfra, M J; Bryan, I; Sitar, Z; Arellano, C; Xie, J; Collazo, R; Ivanisevic, A

    2013-02-18

    AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications.

  11. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin; Ng, G. I. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-01-14

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  12. Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-micron High Electron Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-01

    ARL-TN-0743 ● MAR 2016 US Army Research Laboratory Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for...originator. ARL-TN-0743 ● MAR 2016 US Army Research Laboratory Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo...To) October 2015–January 2016 4. TITLE AND SUBTITLE Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09

  13. Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures

    International Nuclear Information System (INIS)

    Galiev, G. B.; Klimov, E. A.; Klochkov, A. N.; Maltsev, P. P.; Pushkarev, S. S.; Zhigalina, O. M.; Imamov, R. M.; Kuskova, A. N.; Khmelenin, D. N.

    2013-01-01

    The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In 0.38 Al 0.62 As/In 0.37 Ga 0.63 As/In 0.38 Al 0.62 As high electron mobility transistor (MHEMT) nanoheterostructures has been investigated. The samples were grown on GaAs(100) substrates by molecular beam epitaxy. The active regions of the nanoheterostructures are identical, while the metamorphic buffer In x Al 1−x As is formed with a linear or stepwise (by Δ x = 0.05) increase in the indium content over depth. It is found that MHEMT nanoheterostructures with a step metamorphic buffer have fewer defects and possess higher values of two-dimensional electron gas mobility at T = 77 K. The structures of the active region and metamorphic buffer have been thoroughly studied by transmission electron microscopy. It is shown that the relaxation of metamorphic buffer in the heterostructures under consideration is accompanied by the formation of structural defects of the following types: dislocations, microtwins, stacking faults, and wurtzite phase inclusions several nanometers in size

  14. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

    OpenAIRE

    Yanli Liu; Xifeng Yang; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

    2015-01-01

    The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with th...

  15. An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47 as a separated double-gate HEMT

    International Nuclear Information System (INIS)

    Rathi, Servin; Gupta, Mridula; Gupta, R S; Jogi, Jyotika

    2010-01-01

    In this paper, a two-dimensional electron gas (2DEG) charge-control model for carrier density in the channel is developed for a separated double-gate high-electron-mobility transistor. The model is extended to calculate I d –V g characteristics of the device. The drain current model uses a polynomial dependence of sheet carrier concentration on the position of a quasi-Fermi energy level to predict the modulation of back carrier concentration due to a front gate bias. The characteristics are investigated for various channel thicknesses and delta doping concentrations in order to study the effect of the back gate on the overall device performance. The analytical results so obtained are verified by comparing them with simulated and experimental results. A good agreement between the results is obtained, thus validating the model

  16. Narrowing of band gap at source/drain contact scheme of nanoscale InAs-nMOS

    Science.gov (United States)

    Mohamed, A. H.; Oxland, R.; Aldegunde, M.; Hepplestone, S. P.; Sushko, P. V.; Kalna, K.

    2018-04-01

    A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a p-type doped (1 × 1016 cm-3) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of Rsh = 90.9 Ω/sq which is in a good agreement with an experimental value of 97 Ω/sq.

  17. Engineering the Ideal Array (BRIEFING CHARTS)

    Science.gov (United States)

    2007-03-05

    48 V, f = 10 GHz GaN HEMT Transistor i t Dramatically higher: • Output power • Efficiency • Bandwidth GaN HEMT Power Amplifier lifi ...functions – RF amplifiers – 4-bit phase shifters – Amplitude controllers – Summing network – Power control – Latches for phase state – Address

  18. ONR D&I Electronics Technology Programs

    National Research Council Canada - National Science Library

    Moon, Jeong

    2008-01-01

    Program Status: One of the D&I program goals is to develop greatly improved field-plated MMW GaN HEMT devices with high ft/fmax, which will improve gain/PAE and output power of GaN HEMT MMIC PAs simultaneously...

  19. Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-12-01

    In this work, we attempt to reveal the underlying mechanisms of divergent V{sub TH}-thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V{sub TH}, MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V{sub TH} shift. The temperature-dependent V{sub TH} of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V{sub G}-driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V{sub TH}-thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices.

  20. Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

    International Nuclear Information System (INIS)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J.

    2014-01-01

    In this work, we attempt to reveal the underlying mechanisms of divergent V TH -thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V TH , MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V TH shift. The temperature-dependent V TH of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V G -driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V TH -thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices

  1. An enzymatic biosensor based on three-dimensional ZnO nanotetrapods spatial net modified AlGaAs/GaAs high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yu [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China); Bioengineering Program, Lehigh University, Bethlehem, Pennsylvania 18015 (United States); Zhang, Xiaohui; Yan, Xiaoqin; Liao, Qingliang; Wang, Zengze; Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China)

    2014-11-24

    We designed and constructed three dimensional (3D) zinc oxide Nanotetrapods (T-ZnOs) modified AlGaAs/GaAs high electron mobility transistors (HEMTs) for enzymatic uric acid (UA) detection. The chemical vapor deposition synthesized T-ZnOs was distributed on the gate areas of HEMTs in order to immobilize uricase and improve the sensitivity of the HEMTs. Combining with the high efficiency of enzyme immobilization by T-ZnOs and high sensitivity from HEMT, the as-constructed uricase/T-ZnOs/HEMTs biosensor showed fast response towards UA at ∼1 s, wide linear range from 0.2 nM to 0.2 mM and the low detect limit at 0.2 nM. The results point out an avenue to design electronic device as miniaturized lab-on-chip device for high sensitive and specific in biomedical and clinical diagnosis applications.

  2. X-ray diffraction study of InAlAs-InGaAs on InP high electron mobility transistor structure prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H.Y.; Kao, Y.C.; Kim, T.S.

    1990-01-01

    High-electron mobility transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of IN x Al (1-x) As and In y Ga (1-y) As with x ≅ 0.5227 and y ≅ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run. The authors demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization

  3. Polar semiconductor heterojunction structure energy band diagram considerations

    International Nuclear Information System (INIS)

    Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Hao, Yilong

    2016-01-01

    The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

  4. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

    Science.gov (United States)

    Anderson, Travis J.; Koehler, Andrew D.; Tadjer, Marko J.; Hite, Jennifer K.; Nath, Anindya; Mahadik, Nadeemullah A.; Aktas, Ozgur; Odnoblyudov, Vladimir; Basceri, Cem; Hobart, Karl D.; Kub, Francis J.

    2017-12-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures. HEMT structures on 150 mm Si substrates were also evaluated. The HEMTs on engineered substrates exhibited material quality, DC performance, and forward blocking performance superior to those of the HEMT on Si. GaN device layers up to 15 µm were demonstrated with a wafer bow of 1 µm, representing the thickest films grown on 150-mm-diameter substrates with low bow to date.

  5. Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Zhang Xiao-Yu; Sun Jian-Dong; Li Xin-Xing; Zhou Yu; Lü Li; Qin Hua; Tan Ren-Bing

    2015-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V g , the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. (paper)

  6. Polar semiconductor heterojunction structure energy band diagram considerations

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shuxun; Wen, Cheng P., E-mail: cpwen@ieee.org; Wang, Maojun; Hao, Yilong [Institute of Microelectronics, Peking University, Beijing (China)

    2016-03-28

    The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

  7. Reklamların ve Cinsiyet Kimliği Rolünün Tüketicilerin Satın Alma Davranışları Üzerindeki Etkisi = The Effect of Advertisements and Gender Identity Role on Consumer Buying Behavior

    Directory of Open Access Journals (Sweden)

    Mehmet İsmail YAĞCI

    2010-01-01

    Full Text Available Gender is a segmentation criterion which has been used for a long time especially for the analyses of consumer behavior in traditional marketing. However an obligation has aroused to digress the traditional patterns in order to understand consumer behavior in our rapidly changing world. At this point, “gender identity role” concept which is frequently encountered in the literature reminded may help researchers in understanding complex consumer buying behavior. In this study, consumer’s gender identity’s impact on their response to advertisements and whether their socio-economic status levels’ effect their gender identities or not have been analyzed and some significant relations have been found.

  8. Informatics Observed [and] Agenda: A Tool for Agenda Setting Research [and] Telos Language Partner: Multimedia Language Learning, Authoring and Customisation [and] Towards a Consumer Perspective on Information Behaviour Research [and] The Digital Library as Access Management Facilitator [and] Knowledge and Information Management (KIM'21) [and] Perspectives of ICT in Professional Development and Education.

    Science.gov (United States)

    Cawkell, Tony; Kok, Yeong Haur; Goh, Angela; Holaday, Duncan; Hoffstaedter, Petra; Kohn, Kurt; Rowley, Jennifer; van Halm, Johan; Pye, Jo

    1999-01-01

    The following collection of articles reprinted from "CD ROM and Online Review" include "a new way of learning." Discuses research and development funding in educational technology and recommends to offer vast sums to investigate the best way of teaching a particular topic, and through that to fund the use of computers as an incidental part of the…

  9. 1942-1943 Arası Dönemde Kıbrıs Türk Kimliğinin İlk Kurumsallaşma Hareketleri Early Movements of Institutionalizing the Cypriot Turkish Identity Between 1942 and 1943

    Directory of Open Access Journals (Sweden)

    Sibel AKGÜN

    2012-09-01

    Full Text Available Cyprus has been occupying the agenda of international relationssince the mid-20th Century, and it still remains among the unsolvedproblems in the world. The island has a political history that is definedby contrasting interests and political demands in the EasternMediterranean. Apart from global and local balances, the main problem in Cyprus is the idea of nationalism that emerged mostly in 1878 and has crystallized in the process of ethnic differentiation between the two major ethnic and religious communities living in the island. This idea has been consolidated by the policies pursued by the British colonial administration and by the influences of local elites; and thus two conflicting identities emerged. How these two identities, whose objectives and methods are different from one another, firstly emerged in a serious manner is of importance in political-cultural-sociocultural terms. The factors that triggered these processes and helped them get institutionalized constitute an important issue that needs to be addressed as much as their origins. It was the 1940s when those organizations firstly formed, which would serve as social carriers in the fields of media and political and professional organization. This process, which was triggered by international developments, will be addressed by examining each of the organizations such as KATAK and Halkın Sesi. While addressing this process, whose institutional foundations were Enosis, British colonial administration policies and Cypriot Turkish nationalism; the developments of the time will also be taken into consideration. The main subject of the study, on the other hand, will be the dynamics and development of these foundations in the 1940s in terms of organization for the Cypriot Turkish community. Kıbrıs, 20. yüzyılın ortasından itibaren uluslararası ilişkileringündeminde olup, günümüzün çözümlenmemiş sorunlarından biriniteşkil etmektedir. Ada, Doğu Akdeniz’de birbirine karşıt çıkarların vesiyasi isteklerin belirlediği siyasi tarihi ile hareketli bir geçmişe sahiptir.Küresel ve bölgesel dengelerin dışında, Kıbrıs’ta asıl sorun, büyükölçüde 1878 yılından başlayan ve adanın iki büyük etnik ve dinsel halkıarasında, etnik farklılaşma süreci ile belirginleşmiş olan milliyetçilikolgusudur. Bu olguya, İngiliz sömürge yönetiminin izlediği politikalar veyerel seçkin denilen aydınlar ve elitlerin etkisi de eklenince birbirinekarşıt, çatışan bir kimlik ikiliği ortaya çıkmıştır. Amaçları ve yönelimlerifarklı olan bu kimliklerin, oluşma süreci dışında politik - kültürel -sosyo ekonomik olarak ciddi anlamda ilk ortaya çıkma süreçleriönemlidir. Bu süreci tetikleyen ve kurumsallaşmasına neden olanfaktörler, ilk oluşmaya başlama dönemleri kadar önemli ve üzerindedurulması gereken bir konudur.Kıbrıs Türk halkı içinde basın yayın, siyasi ve meslekiörgütlenme alanlarında birer sosyal taşıyıcı olan yapılarınoluşturulması 1940’lı yıllara denk gelmektedir. Uluslararasıgelişmelerin etkisi ile başlayan bu süreç, tek tek KATAK, Halkın Sesigibi sosyal taşıyıcı yapıların incelenmesi ile ele alınacaktır. Kurumsaltemelinde Enosis, İngiliz sömürge yönetimi politikaları ve Kıbrıs Türkmilliyetçiliği olan bu süreç ele alınırken, dönemin gelişmeleri de gözönünde bulundurularak bir çözümleme yapılacaktır. Ayrı ayrı elealınabilecek olan bu temellerin, Kıbrıs Türk halkı için kurumsallaşmaanlamında 1940’lı yıllardaki dinamiği ve gelişimi ise çalışmanın anakonusu olacaktır.

  10. Tracking Theory Building and Use Trends in Selected LIS Journals: More Research is Needed. A review of: Kim, Sung‐Jin, and Dong Y. Jeong. “An Analysis of the Development and Use of Theory in Library and Information Science Research Articles.” Library & Information Science Research 28.4 (Sept. 2006: 548‐62.

    Directory of Open Access Journals (Sweden)

    Carol Perryman

    2007-09-01

    Full Text Available Objective ‐ The authors measure theory incidents occurring in four LIS journals between 1984‐2003 in order to examine their number and quality and to analyze them by topic. A third objective, only identified later in the text of the study, was to compare theory development and use between Korean and international journals. Research questions asked include whether LIS has its own theoretical base as a discipline, and what characteristics the theoretical framework has.Design – Bibliometric study.Setting – Journal issues selected from four LIS journals for the time span from 1984 ‐ 2003.Subjects – Two international journals, Journal of the American Society for Information Science and Technology (JASIST and Library and Information Science Research (LISR were selected based on their high ranking in the Social Sciences Citation Index (SSCI impact factors. Two Korean journals, Journal of the Korean Society for Information Management (JKSIM and Journal of the Korean Society for Library and Information Science (JKSLIS were selected.Methods ‐ After having determined a definition of theory, and identifying different levels of theory, the authors set up rules for the identification of theory incidents, which are defined as “events in which the author contributed to the development or the use of theory in his/her own paper” (550. Content analysis of 1661 research articles was performed to measure theory incidents according to working definitions. Interrater reliability was ensured by conducting independent coding for “subfield classification, identification of theory incidents, and quality measurement” (555,using a sample of 199 articles (random selection not specified, achieving 94‐97% interrater reliability. Incidents, once identified, were evaluated for quality using Dubin’s “efficiency of law” criteria, involving measures of relatedness, directionality, co‐variation, rate of change, and “profundity,” defined as the depth to which theory is incorporated into the research study.Main Results ‐ 21.79% (n=362 of the articles contained theory incidents that were analyzed and evaluated. Trend measurement indicated an overall increase, although a slight decrease was shown in the year range 1993‐2003. International journals accounted for 61.33% of theory incidents, compared to 38.67% for the Korean journals. T‐testing showed that differences in means between Korean and international journals were not statistically significant. Topical theory areas were ranked by frequency. The top five areas were shown to be nearly identical between Korean and international journals. ANOVA was performed with significant results in the difference between efficiency ratings. Conclusion – The authors find that the overall proportion of theory incidents including both theory development and use increased through the 20‐year time span examined, and that LIS has established its own theoretical framework based upon the frequency of incidents.

  11. Fall proof: improving mobility and balance Elizabeth Best-Martini Fall proof: improving mobility and balance and Kim A Botenhagen-Di Genova Human Kinetics £24.50 0 73603 687 3 0736036873 Debra Rose Human Kinetics £38 0 73604 088 9 0736040889.

    Science.gov (United States)

    2003-09-01

    A structured balance and mobility-training programme specifically designed to reduce physical frailty and the rising incidence of falls among older people. This practical manual blends theory into practical applications and covers an introduction to the body systems, balance assessments and a discussion of contemporary motor learning principles. Tel: Customer Services 0113 255 5665. Email: hk@hkeurope.com.

  12. X-ray crystal structures of the pheromone-binding domains of two quorum-hindered transcription factors, YenR of Yersinia enterocolitica and CepR2 of Burkholderia cenocepacia: KIM et al.

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Youngchang [Midwest Center for Structural Genomics, Biosciences, Argonne National Laboratory, Argonne Illinois 60439; Structural Biology Center, Biosciences, Argonne National Laboratory, Argonne Illinois 60439; Chhor, Gekleng [Midwest Center for Structural Genomics, Biosciences, Argonne National Laboratory, Argonne Illinois 60439; Tsai, Ching-Sung [Department of Microbiology, Cornell University, Ithaca New York 14853; Fox, Gabriel [Department of Microbiology, Cornell University, Ithaca New York 14853; Chen, Chia-Sui [Department of Microbiology, Cornell University, Ithaca New York 14853; Winans, Nathan J. [Department of Microbiology, Cornell University, Ithaca New York 14853; Jedrzejczak, Robert [Structural Biology Center, Biosciences, Argonne National Laboratory, Argonne Illinois 60439; Joachimiak, Andrzej [Midwest Center for Structural Genomics, Biosciences, Argonne National Laboratory, Argonne Illinois 60439; Structural Biology Center, Biosciences, Argonne National Laboratory, Argonne Illinois 60439; Department of Biochemistry and Molecular Biology, University of Chicago, Chicago Illinois 60637; Winans, Stephen C. [Department of Microbiology, Cornell University, Ithaca New York 14853

    2017-07-24

    The ability of LuxR-type proteins to regulate transcription is controlled by bacterial pheromones, N-acylhomoserine lactones (AHLs). Most LuxR-family proteins require their cognate AHLs for activity, and some of them require AHLs for folding and stability, and for protease-resistance. However, a few members of this family are able to fold, dimerize, bind DNA, and regulate transcription in the absence of AHLs; moreover, these proteins are antagonized by their cognate AHLs. One such protein is YenR of Yersinia enterocolitica, which is antagonized by N-3-oxohexanoyl-l-homoserine lactone (OHHL). This pheromone is produced by the OHHL synthase, a product of the adjacent yenI gene. Another example is CepR2 of Burkholderia cenocepacia, which is antagonized by N-octanoyl-l-homoserine lactone (OHL), whose synthesis is directed by the cepI gene of the same bacterium. Here, we describe the high-resolution crystal structures of the AHL binding domains of YenR and CepR2. YenR was crystallized in the presence and absence of OHHL. While this ligand does not cause large scale changes in the YenR structure, it does alter the orientation of several highly conserved YenR residues within and near the pheromone-binding pocket, which in turn caused a significant movement of a surface-exposed loop.

  13. Osman Turan'ın Siyasetçi Kimliği ve Yassıada'da Yargılanması (1954-1961 Political Identity Of Osman Turan And His Trial In Yassıada (1954-1961

    Directory of Open Access Journals (Sweden)

    Zehra ARSLAN

    2013-09-01

    Full Text Available Osman Turan entered politics as the parliamentarian of Trabzonfrom Democrat Party after the elections held on 2nd of May 1954. Hecontinued his service until 1960 coup d’etat. During his service, heexpressed that he did not approve some of the enforcements ofDemocrat Party, to which he was a member, such as making Kırşehir adistrict, arrangements at universities and cautions against theopposition during the speeches he gave in Grand National Assembly ofTurkey and party group. In the post-1960 coup d’etat period (27th ofMay, a Grand Jury was constituted which led the accusations madetowards DP members after the coup d’etat and some laws grantingextraordinary authorities were enacted. Osman Turan was not presentin the Assembly due to health problems which prevented him fromrating either favorably or unfavorably. His name was mentioned withthose of oppositions since he sometimes contradicted Menderes. Therewere even rumors that he would be expelled. However, Osman Turanpreferred to keep his battle within DP. He was arrested after coup d’etatand he gave his testimony on 30th of June in 1960 for the first time. Hewas put on trial within the scope of articles no. 141 and 146 fromTurkish Penal Code in the bylaw prepared by prosecution. The onlyaccusation made in the name of Osman Turan in the bylaw was theclaim that he received a certain amount of foreign currency. As a resultof evidence he provided in addition to his defense and investigation, itwas proven that the claims against him were unreal. He experiencedsome health problems during his arrest which lasted for 16.5 months.He could not attend all of the trials for he was being treated in thehospital located in garrison. Osman Turan was one of the 45 defendantswho were arrested due to violation of constitutional law on 15th ofSeptember 1961 and acquitted later on. 2 Mayıs 1954 seçimleri ile Demokrat Parti Trabzon Milletvekili olarak aktif siyasete atılan Osman Turan, 27 Mayıs 1960 Darbesi'ne kadar bu görevini sürdürmüştür. Milletvekilliği süresince mensubu bulunduğu Demokrat Partinin Kırşehir'in ilçe haline getirilmesi, üniversitelerde yapılan düzenlemeler, muhalefete karşı alınan tedbirler vb. uygulamalarını tasvip etmediğini TBMM ve parti grubunda yaptığı konuşmalarda dile getirmiştir. 27 Mayıs Darbesi sonrası DP mensuplarına yönelik suçlamaların başını çeken Tahkikat Encümeni oluşturulması ve bu encümene olağanüstü yetkiler veren kanunların çıkartılması sırasında da Osman Turan, sağlık problemleri nedeniyle mecliste bulunamamış dolayısı ile bu kanunlara lehte veya aleyhte oy vermemiştir. Menderes'le zaman zaman ters düştüğü için parti içerisinde adı, muhaliflerle birlikte anılmış hatta ihraç edileceği yönünde söylentiler ortaya atılmıştı. Fakat mücadelesini DP içerisinde sürdürme yolunu seçen Osman Turan, darbe ile birlikte tutuklanmış, ilk ifadesini de 30 Haziran 1960 tarihinde vermiştir. İddia makamı tarafından hazırlanan kararnamede, Türk Ceza Kanununun 141 ve 146ncı maddeleri kapsamında yargılanmıştır. Kararnamede Osman Turan'ın adının geçtiği tek suçlama ise bir miktar döviz aldığı iddiası olmuştur. Savunmasına ek olarak sunduğu deliller ve yapılan soruşturmalar sonucunda aleyhinde yapılan suçlamaların gerçek dışı olduğu kanıtlanmıştır. Toplam 16,5 ay tutukluluk döneminde sağlık problemleri yaşamış ve garnizondaki hastanede tedavi altına alındığı için duruşmaların tümüne iştirak edememiştir. Osman Turan, 15 Eylül 1961 tarihinde anayasayı ihlal suçundan tutuklu bulunup beraatına karar verilen 45 sanık arasında yer almıştır.

  14. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    International Nuclear Information System (INIS)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-01-01

    The authors report on Al 2 O 3 /Al 0.85 In 0.15 N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al 2 O 3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al 2 O 3 /Al 0.85 In 0.15 N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics

  15. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  16. Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

    International Nuclear Information System (INIS)

    Fang, J. Y.; Hsu, C. P.; Kang, Y. W.; Fang, K. C.; Kao, W. L.; Yao, D. J.; Chen, C. C.; Li, S. S.; Yeh, J. A.; Wang, Y. L.; Lee, G. Y.; Chyi, J. I.; Hsu, C. H.; Huang, Y. F.; Ren, F.

    2013-01-01

    The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metal was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity

  17. Application of the Single Hardening Model in the Finite Element Program ABAQUS

    DEFF Research Database (Denmark)

    Jakobsen, Kim Parsberg

    model, developed by Lade and Kim (Kim & Lade 1988, Lade & Kim 1988a, Lade & Kim 1988b) is implemented as a user defined material module, UMAT, in the commercial finite element program, ABAQUS. The advantages of the Single Hardening Model Iie in its ability to predict elastic and plastic displacements...

  18. In situ rumen degradability characteristics of rice straw, soybean ...

    African Journals Online (AJOL)

    In situ rumen degradability characteristics of rice straw, soybean curd residue and peppermint (Mentha piperita) in Hanwoo steer (Bos Taurus coreanae). Byong Tae Jeon, KyoungHoon Kim, Sung Jin Kim, Na Yeon Kim, Jae Hyun Park, Dong Hyun Kim, Mi Rae Oh, Sang Ho Moon ...

  19. Browse Title Index

    African Journals Online (AJOL)

    Items 6201 - 6250 of 11090 ... Byong Tae Jeon, KyoungHoon Kim, Sung Jin Kim, Na Yeon Kim, Jae Hyun Park, Dong Hyun Kim, Mi Rae Oh, Sang Ho Moon. Vol 10, No 65 (2011), In vitro activity of certain antimicrobial agents in combination with Augouardia letestii hexane extracts against methicillin-resistant Staphylococcus ...

  20. Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

    International Nuclear Information System (INIS)

    Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

    2007-01-01

    The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

  1. The operation cutoff frequency of high electron mobility transistor measured by terahertz method

    International Nuclear Information System (INIS)

    Zhu, Y. M.; Zhuang, S. L.

    2014-01-01

    Commonly, the cutoff frequency of high electron mobility transistor (HEMT) can be measured by vector network analyzer (VNA), which can only measure the sample exactly in low frequency region. In this paper, we propose a method to evaluate the cutoff frequency of HEMT by terahertz (THz) technique. One example shows the cutoff frequency of our HEMT is measured at ∼95.30 GHz, which is reasonable agreement with that estimated by VNA. It is proved THz technology a potential candidate for the substitution of VNA for the measurement of high-speed devices even up to several THz.

  2. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wan Xiaojia; Wang Xiaoliang; Xiao Hongling; Feng Chun; Jiang Lijuan; Qu Shenqi; Wang Zhanguo; Hou Xun

    2013-01-01

    Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress. (semiconductor devices)

  3. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    International Nuclear Information System (INIS)

    Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki

    2014-01-01

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated

  4. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    .... This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation...

  5. A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

    International Nuclear Information System (INIS)

    Mao Wei; She Wei-Bo; Zhang Chao; Zhang Jin-Cheng; Zhang Jin-Feng; Liu Hong-Xia; Yang Lin-An; Zhang Kai; Zhao Sheng-Lei; Chen Yong-He; Zheng Xue-Feng; Hao Yue; Yang Cui; Ma Xiao-Hua

    2014-01-01

    In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco—Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

    Science.gov (United States)

    Cheng, Zhi-Qun; Hu, Sha; Liu, Jun; Zhang, Qi-Jun

    2011-03-01

    In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model. Project supported by the National Natural Science Foundation of China (Grant No. 60776052).

  7. Impact of oxide thickness on gate capacitance – Modelling and ...

    Indian Academy of Sciences (India)

    Department of Electronics and Communication Engineering, National ... conventional HEMT, Schottky barrier diode is formed at the gate electrode. .... term corresponds to the energy required for the electric field in the oxide layer and the.

  8. Oxygen and carbon dioxide sensing

    Science.gov (United States)

    Ren, Fan (Inventor); Pearton, Stephen John (Inventor)

    2012-01-01

    A high electron mobility transistor (HEMT) capable of performing as a CO.sub.2 or O.sub.2 sensor is disclosed, hi one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.

  9. Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

    Science.gov (United States)

    He, Yunlong; Wang, Chong; Mi, Minhan; Zhang, Meng; Zhu, Qing; Zhang, Peng; Wu, Ji; Zhang, Hengshuang; Zheng, Xuefeng; Yang, Ling; Duan, Xiaoling; Ma, Xiaohua; Hao, Yue

    2017-05-01

    A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) has been fabricated, by combining nanowire channel (NC) structure fabrication and N2O (or O2) plasma treatment. A comparison of two NC-HEMTs with different plasma treatments has been made. The NC-HEMT with N2O plasma treatment shows an output current of 610 mA/mm and a peak transconductance of 450 mS/mm. The DIBL of the NC-HEMT with N2O plasma treatment is as low as 2 mV/V, and an SS of 70 mV/decade is achieved. The device exhibits an intrinsic current gain cutoff frequency f T of 19 GHz and a maximum oscillation frequency f max of 58 GHz.

  10. High-Power Electron Accelerators for Space (and other) Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Dinh Cong [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lewellen, John W. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-05-23

    This is a presentation on high-power electron accelerators for space and other applications. The main points covered are: electron beams for space applications, new designs of RF accelerators, high-power high-electron mobility transistors (HEMT) testing, and Li-ion battery design. In summary, the authors have considered a concept of 1-MeV electron accelerator that can operate up to several seconds. This concept can be extended to higher energy to produce higher beam power. Going to higher beam energy requires adding more cavities and solid-state HEMT RF power devices. The commercial HEMT have been tested for frequency response and RF output power (up to 420 W). Finally, the authors are testing these HEMT into a resonant load and planning for an electron beam test in FY17.

  11. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. WOCSDICE '98, 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits, May 24-27, 1998, Pannonia Seehotel, Zeuthen, Germany

    National Research Council Canada - National Science Library

    1998-01-01

    .... Topics include material growth and characterization, recent developments in MESFETS, HEMTs, and HBTs, MMlC-Technology, Microwave and millimeter wave power devices, GaN- Devices, Mesoscopic devices...

  13. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Hiroki, Masanobu, E-mail: hiroki.masanobu@lab.ntt.co.jp; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki [NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi 243-0198 (Japan)

    2014-11-10

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

  14. WOCSDICE 1998: 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits, May 24-27, 1998, Zeuthen, Germany

    National Research Council Canada - National Science Library

    1998-01-01

    .... Topics include material growth and characterization, recent developments in MESFETS, HEMTs, and HBTs, MMlC-Technology, Microwave and millimeter wave power devices, GaN- Devices, Mesoscopic devices...

  15. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  16. Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

    International Nuclear Information System (INIS)

    Cheng Zhi-Qun; Hu Sha; Liu Jun; Zhang Qi-Jun

    2011-01-01

    In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model. (condensed matter: structural, mechanical, and thermal properties)

  17. Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

    Science.gov (United States)

    2017-08-14

    networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high...simulations of MMIC (3–6 GHz, 28 V/180 mA) 1.75-mm HEMT power amplifier ............................................... 13 Fig. 20 Simple schematic...design simple , a single 1.75-mm high-electron-mobility transistor (HEMT) was used for a preliminary ideal design of the broadband power amplifier

  18. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2018-05-01

    We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

  19. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  20. Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

    Science.gov (United States)

    Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

    2018-04-01

    A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

  1. Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

    International Nuclear Information System (INIS)

    Han Tie-Cheng; Zhao Hong-Dong; Yang Lei; Wang Yang

    2017-01-01

    In this work, we use a 3-nm-thick Al 0.64 In 0.36 N back-barrier layer in In 0.17 Al 0.83 N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al 0.64 In 0.36 N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al 0.64 In 0.36 N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency ( f T ) and power gain cut-off frequency ( f max ) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length. (paper)

  2. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    International Nuclear Information System (INIS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  3. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-01-01

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme

  4. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  5. Pyongyangi leedi Macbeth tõmbab niite Põhja-Koreas / Yuriko Koike

    Index Scriptorium Estoniae

    Koike, Yuriko

    2010-01-01

    Põhja-Korea liidri Kim Jong-il'i õest Kim Kyong-hui'st. Autori, Jaapani endise kaitseministri väitel on hakatud uskuma, et Kim Jong-il võib igal hetkel määrata just Kim Kyong-hui üleminekuaja valitsejaks, kes peab korraldama tema surma järel kolmanda põlvkonna Kimi võimuletuleku, kuid Kim Kyong-hui võib ise ihata saada Kim Jong-ili mantlipärijaks

  6. Teratogenicity and brain aromatase-induction of monosodium ...

    African Journals Online (AJOL)

    Teratogenicity and brain aromatase-induction of monosodium glutamate in estrogen-responsive mosaic transgenic zebra fish Danio rerio. Tamer Said Abdelkader, Chang Seo-Na, Kim Tae-Hyun, Song Juha, Kim Dongso, Jae-Hak Park ...

  7. American Vitiligo Research Foundation

    Science.gov (United States)

    ... Place Vitiligo Voices Contact Welcome to The American Vitiligo Foundation Home Page Top Isabella T., California An ... 20.00 USD 20 for - 35.00 USD Vitiligo Doesn't Scare Me by Kim Kirkland Kim ...

  8. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

    International Nuclear Information System (INIS)

    Govindaraju, N.; Singh, R.N.

    2011-01-01

    Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

  9. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  10. Pramana – Journal of Physics | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    ... J Jia B M Johnson S C Johnson K S Joo S Kametani J H Kang M Kann S S Kapoor S Kelly B Khachaturov A Khanzadeev J Kikuchi D J Kim H J Kim S Y Kim Y G Kim W W Kinnison E Kistenev A Kiyomichi C Klein-Boesing S Klinksiek L Kochenda V Kochetkov D Koehler T Kohama D Kotchetkov A Kozlov P J Kroon K Kurita ...

  11. Root and critical point behaviors of certain sums of polynomials

    Indian Academy of Sciences (India)

    Seon-Hong Kim

    2018-04-24

    Apr 24, 2018 ... Root and critical point behaviors of certain sums of polynomials. SEON-HONG KIM1,∗. , SUNG YOON KIM2, TAE HYUNG KIM2 and SANGHEON LEE2. 1Department of Mathematics, Sookmyung Women's University, Seoul 140-742, Korea. 2Gyeonggi Science High School, Suwon 440-800, Korea.

  12. Tubular kidney injury molecule-1 in protein-overload nephropathy

    NARCIS (Netherlands)

    van Timmeren, Mirjan M.; Bakker, Stephan J. L.; Vaidya, Vishal S.; Bailly, Veronique; Schuurs, Theo A.; Damman, Jeffrey; Stegeman, Coen A.; Bonventre, Joseph V.; van Goor, Harry

    Kim-1, a recently discovered membrane protein, is undetectable in normal kidneys but markedly induced in proximal tubules after ischemic and toxic injury. The function of Kim-1 is unclear, but it is implicated in damage/repair processes. The Kim-1 ectodomain is cleaved by metalloproteinases and

  13. 75 FR 69160 - Quarterly Publication of Individuals, Who Have Chosen To Expatriate, as Required by Section 6039G

    Science.gov (United States)

    2010-11-10

    ... Kendall Teresa Kennedy Christin Susan Kim Chung H. Kim Hannah Boyoung Kim Johnny Han Kin Tse Wing Kiresepi... Ronald Lao Man Bee Lao Ruperto C. Laty Fabrice S. Lau Kwok Chu Lau Lawrence Juen-Yee Lau Megan Shirley... Po Polly Tsangrides Philippos Alexandros Tse Anthony Wai Chung Tse Christopher Tung Alan Leih-Sing...

  14. Working Programme 2010. Knowledge Institute for Mobility Policy

    International Nuclear Information System (INIS)

    Jorritsma, P.; Derriks, H.; Francke, J.; Gordijn, H.; Groot, W.; Harms, L.; Van der Loop, H.; Peer, S.; Savelberg, F.; Wouters, P.

    2009-12-01

    The Dutch Knowledge Institute for Mobility Policy (KiM) provides analyses of mobility that influence the policy. As a separate institute within the Ministry of Transport, Public Works and Water management, the KiM conducts strategic outlooks and policy analyses. KiM establishes working programs annually. [nl

  15. Influence of hydrogen on chemical vapour synthesis of different ...

    Indian Academy of Sciences (India)

    Administrator

    The role of hydrogen on the surface passivation behaviour of the Ni catalyst and its ..... Chae S J, Güneş F, Kim K K, Kim E S, Han G H, Kim S M,. Shin H-J, Yoon ... Xiong Y G, Suda Y, Wang D Z, Huang Y J and Ren Z F 2005. Nanotechnology ...

  16. Kimi mantlipärija sai mõjukatele ametipostidele / Kaivo Kopli

    Index Scriptorium Estoniae

    Kopli, Kaivo

    2010-01-01

    Põhja-Korea pealinnas toimunud Tööliste Partei kongressil määrati riigi liidri Kim Jong-ili noorim poeg Kim Jong-un kesksõjakomisjoni aseesimeheks ja keskkomitee liikmeks. Poliitbüroosse määrati alternatiivliikmena Kim Jong-ili õe abikaasa Chang Song-taek

  17. The impact of sugar and fatty acid on the bioactivity of N-fatty acyl-L ...

    Indian Academy of Sciences (India)

    SRIKANTH VUDHGIRI

    complex on colon cancer cells J. Food Biochem. 39. 238. 36. Kim D H, Jung E A, Sohng I S, Han J A, Kim T H and Han M J 1998 Intestinal bacterial metabolism of flavonoids and its relation to some biological activities. Arch. Pharm. Res. 21 17. 37. Kim D H 2002 Herbal medicines are activated by intesti- nal microflora Nat.

  18. Brassia campestris L. ssp. chinensis L.var. utilis Tsen et Lee

    African Journals Online (AJOL)

    omodibo

    2012-12-31

    Dec 31, 2012 ... On the basis of morphological and cultural features, the pathogen ... Alternaria isolate from Purple-Caitai showed 99% identity with other ITS sequences of .... Cho KH, Park SH, Kim KT, Kim S, Kim JS, Park BS, Woo JG, Lee HJ.

  19. Supplementary data: Association of CTLA4, CD28 and ICOS gene ...

    Indian Academy of Sciences (India)

    Supplementary data: Association of CTLA4, CD28 and ICOS gene polymorphisms with clinicopathologic characteristics of childhood IgA nephropathy in Korean population. Hak-Jae Kim, Joo-Ho Chung, Sungwook Kang, Su-Kang Kim, Byoung-Soo Cho, Sung-Do Kim and Won-Ho Hahn. J. Genet. 90, 151–155. Table 1.

  20. Graphene Synthesis and Characterization

    Science.gov (United States)

    2015-04-08

    aplications in devices, because can be properly scaled to industrial level. It was studied the experimental parameters involved in the growth of graphene...Balakrishnan, T. Lei, H. R. Kim, Y. I. Song, Y.-J. Kim, K. S. Kim, B. Özyilmaz, J:-H Ahn, B. H. Hong and S. Iijima, Nature Nanotechnology , 5, 574, 2010. Roll