Zory, Jr, Peter S; Kelley, Paul
1993-01-01
This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment
Directory of Open Access Journals (Sweden)
Dan Alexandru Anghel
2012-01-01
Full Text Available In semiconductor laser modeling, a good mathematical model gives near-reality results. Three methods of modeling solutions from the rate equations are presented and analyzed. A method based on the rate equations modeled in Simulink to describe quantum well lasers was presented. For different signal types like step function, saw tooth and sinus used as input, a good response of the used equations is obtained. Circuit model resulting from one of the rate equations models is presented and simulated in SPICE. Results show a good modeling behavior. Numerical simulation in MathCad gives satisfactory results for the study of the transitory and dynamic operation at small level of the injection current. The obtained numerical results show the specific limits of each model, according to theoretical analysis. Based on these results, software can be built that integrates circuit simulation and other modeling methods for quantum well lasers to have a tool that model and analysis these devices from all points of view.
Quantum-Well Thermophotovoltaic Cells
Freudlich, Alex; Ignatiev, Alex
2009-01-01
Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.
Silicon Germanium Quantum Well Solar Cell Project
National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities. The cell-to-cell circuits of quantum-well PV...
Silicon Germanium Quantum Well Thermoelectrics
Davidson, Anthony Lee, III
Today's growing energy demands require new technologies to provide high efficiency clean energy. Thermoelectrics that convert heat to electrical energy directly can provide a method for the automobile industry to recover waste heat to power vehicle electronics, hence improving fuel economy. If large enough efficiencies can be obtained then the internal combustion engine could even be replaced. Exhaust temperature for automotive application range from 400 to 800 K. In this temperature range the current state of the art materials are bulk Si1-xGex alloys. By alternating layers of Si and Si1-xGex alloy device performance may be enhanced through quantum well effects and variations in material thermal properties. In this study, superlattices designed for in-plane operation with varying period and crystallinity are examined to determine the effect on electrical and thermal properties. In-plane electrical resistivity of these materials was found to be below the bulk material at a similar doping at room temperature, confirming the role of quantum wells in electron transport. As period is reduced in the structures boundary scattering limits electron propagation leading to increased resistivity. The Seebeck coefficient measured at room temperature is higher than the bulk material, additionally lending proof to the effects of quantum wells. When examining cross-plane operation the low doping in the Si layers of the device produce high resistivity resulting from boundary scattering. Thermal conductivity was measured from 77 K up to 674 K and shows little variation due to periodicity and temperature, however an order of magnitude reduction over bulk Si1-xGex is shown in all samples. A model is developed that suggests a combination of phonon dispersion effects and strong boundary scattering. Further study of the phonon dispersion effects was achieved through the examination of the heat capacity by combining thermal diffusivity with thermal conductivity. All superlattices show a
Pyroelectric Quantum Well Energy Harvesters Project
National Aeronautics and Space Administration — We propose the investigation of pyroelectric energy harvesters with enhanced efficiencies through quantum wells induced by a multilayer design. Pyroelectric...
Spin Splitting in Different Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Hao Yafei
2012-01-01
We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Magnetospatial dispersion of semiconductor quantum wells
Kotova, L. V.; Kats, V. N.; Platonov, A. V.; Kochereshko, V. P.; André, R.; Golub, L. E.
2018-03-01
Polarization conversion of light reflected from quantum wells governed by both magnetic field and light propagation direction is observed. We demonstrate that the polarization conversion is caused by the magnetospatial dispersion in quantum wells which manifests itself in the reflection coefficient contribution bilinear in the in-plane components of the magnetic field and the light wave vector. The magnetospatial dispersion is shown to arise due to structure inversion asymmetry of the quantum wells. The effect is resonantly enhanced in the vicinity of the heavy-hole exciton. We show that microscopically the magnetospatial dispersion is caused by the mixing of heavy- and light-hole states in the quantum well due to both orbital effect of the magnetic field and the in-plane hole motion. The degree of the structure inversion asymmetry is determined for GaAs/AlGaAs and CdTe quantum wells.
Silicon Germanium Quantum Well Solar Cell
National Aeronautics and Space Administration — A single crystal SiGe has enormous potentials for high performance chips and solar cells. This project seeks to fabricate a rudimentary but 1st cut quantum-well...
Quantum wells and the generalized uncertainty principle
International Nuclear Information System (INIS)
Blado, Gardo; Owens, Constance; Meyers, Vincent
2014-01-01
The finite and infinite square wells are potentials typically discussed in undergraduate quantum mechanics courses. In this paper, we discuss these potentials in the light of the recent studies of the modification of the Heisenberg uncertainty principle into a generalized uncertainty principle (GUP) as a consequence of attempts to formulate a quantum theory of gravity. The fundamental concepts of the minimal length scale and the GUP are discussed and the modified energy eigenvalues and transmission coefficient are derived. (paper)
Fractional quantum conductance in edge channels of silicon quantum wells
Energy Technology Data Exchange (ETDEWEB)
Bagraev, Nikolay; Klyachkin, Leonid; Kudryavtsev, Andrey; Malyarenko, Anna [Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
2013-12-04
We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type silicon quantum well (Si-QW), 2 nm, confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The edge channels in the Si-QW plane are revealed by measuring the longitudinal quantum conductance staircase, G{sub xx}, as a function of the voltage applied to the Hall contacts, V{sub xy}, to a maximum of 4e{sup 2}/h. In addition to the standard plateau, 2e{sup 2}/h, the variations of the V{sub xy} voltage appear to exhibit the fractional form of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractions.
Wave-packet dynamics in quantum wells
DEFF Research Database (Denmark)
Kuznetsov, A. V.; Sanders, G. D.; Stanton, C. J.
1995-01-01
It has been recently recognized that in bulk semiconductors the displacement current caused by ultrafast optical generation of ''polarized pairs'' in the applied de field is an important mechanism of charge transport in addition to the usual transport current. In quantum-well systems......, this polarized pair creation is thought to be the only source of photocurrent at the early stages of photoexcitation since the bulk like transport current is inhibited by the barriers. In this work we perform a full quantum-mechanical analysis of ultrafast optical excitation in a de-biased quantum well. We take...... into account the multiple transitions that become allowed in the de field which breaks the Delta n = 0 selection rule. As a result, the carriers are created as wave packets formed by coherent superposition of several eigenstates. When the characteristic size of these wave packets (coherence length) is much...
Mixed biexcitons in single quantum wells
DEFF Research Database (Denmark)
Wagner, Hans Peter; Langbein, Wolfgang Werner; Hvam, Jørn Märcher
1999-01-01
Biexcitonic complexes in a ZnSe single quantum well are investigated by spectrally resolved four-wave mixing (FWM). The formation of heavy-heavy-hole XXh and of mixed heavy-light-hole XXm biexcitons showing binding energies of Delta(h) = 4.8 meV and Delta(m)= 2.8 meV is identified by polarization...
Piezoelectric effect in strained quantum wells
International Nuclear Information System (INIS)
Dang, L.S.; Andre, R.; Cibert, J.
1995-01-01
This paper describes some physical aspects of the piezoelectric effect which takes place in strained semiconductor heterostructures grown along a polar axis. First we show how piezoelectric fields can be accurately measured by optical spectroscopy. Then we discuss about the origin of the non-linear piezoelectric effect reported recently for CdTe, and maybe for InAs as well. Finally we compare excitonic effects in piezoelectric and non-piezoelectric quantum wells. (orig.)
Fractional Quantum Hall States in a Ge Quantum Well.
Mironov, O A; d'Ambrumenil, N; Dobbie, A; Leadley, D R; Suslov, A V; Green, E
2016-04-29
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We analyze the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long-range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarized Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
Strained quantum well photovoltaic energy converter
Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)
1998-01-01
An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.
Spatially indirect excitons in coupled quantum wells
Energy Technology Data Exchange (ETDEWEB)
Lai, Chih-Wei Eddy [Univ. of California, Berkeley, CA (United States)
2004-03-01
Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunities for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer)^{2} were
Spectroscopy of Single Free Standing Quantum Wells
International Nuclear Information System (INIS)
Williams, M D; Hollars, C W; Huser, T; Jallow, N; Cochran, A; Bryant, R
2006-01-01
We investigated the interaction of quantum confined exciton states GaAs quantum wells with native surface states. Single molecule photoluminescence (PL) spectroscopy, developed by T. Huser at LLNL was used to probe the unique bare quantum wells in the free standing quantum well structure. The latter was developed by the M. D. Williams at Clark Atlanta University. The goals of the project during this budget cycle were to procure samples containing GaAs free standing QWs, identify suitable regions for PL analysis at Lawrence Livermore, analyze the structures at room temperature and at liquid nitrogen temperatures. The specific regions of interest on the sample structures were identified by scanning electron microscopy at Clark Atlanta prior to transport to LLNL. Previous attempts at other facilities using NSOM, cathodoluminescence, and conventional PL showed little luminescence activity at room temperature from the 200 (angstrom) thick wells. This suggested either excess recombination due to surface states in the quantum well region or insufficient absorption length for photoluminescence. The literature suggested that the effect of the defects could be eliminated by reducing the sample temperature below their associated activation energies. In our previous subcontract work with LLNL, a significant amount of effort was expended to modify the apparatus to allow low temperature measurements. The modifications were not successful and we concluded that in order to do the measurements at low temperature we would need to purchase a commercial optical cryostat to get reliable results. Ms. Rochelle Bryant worked during the summer as an intern at LLNL on the project under the supervision of C. Hollars and in collaboration with T. Huser and found that PL emission could be obtained at room temperature. This was a surprising result as the literature and our experience shows that there is no PL emission from GaAs at room temperature. We speculate that this is due to the small
Physics of strained quantum well lasers
Loehr, John P
1998-01-01
When this publisher offered me the opportunity to \\\\Tite a book, some six years ago, I did not hesitate to say yes. I had just spent the last four years of graduate school struggling to understand the physics of strained quantum well lasers, and it seemed to me the whole experience was much more difficult that it should have been. For although many of the results I needed were easy to locate, the underlying physical premises and intervening steps were not. If only I had a book providing the derivations, I could have absorbed them and gone on my way. Such a book lies before you. It provides a unified and self-contained descrip tion of the essential physics of strained quantum well lasers, starting from first principles whenever feasible. The presentation I have chosen requires only the standard introductory background in quantum mechanics, solid state physics, and electromagnetics expected of entering graduate students in physics or elec trical engineering. A single undergraduate course in each of these su...
Exciton liquid in coupled quantum wells.
Stern, Michael; Umansky, Vladimir; Bar-Joseph, Israel
2014-01-03
Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in gallium arsenide/aluminum gallium arsenide-coupled quantum wells. Above a critical density and below a critical temperature, the photogenerated electrons and holes separate into two phases: an electron-hole plasma and an exciton liquid, with a clear sharp boundary between them. The two phases are characterized by distinct photoluminescence spectra and by different electrical conductance. The liquid phase is formed by the repulsive interaction between the dipolar excitons and exhibits a short-range order, which is manifested in the photoluminescence line shape.
The Physics of Quantum Well Infrared Photodetectors
Choi, K K
1999-01-01
In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the ne
Spin-orbit interaction in multiple quantum wells
Energy Technology Data Exchange (ETDEWEB)
Hao, Ya-Fei, E-mail: haoyafei@zjnu.cn [Physics Department, Zhejiang Normal University, Zhejiang 321004 (China)
2015-01-07
In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.
Spin-orbit interaction in multiple quantum wells
International Nuclear Information System (INIS)
Hao, Ya-Fei
2015-01-01
In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices
Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier
International Nuclear Information System (INIS)
Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu
2009-01-01
The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design
Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells
Lorenz, K.; Redondo-Cubero, A.; Lourenço, M. B.; Sequeira, M. C.; Peres, M.; Freitas, A.; Alves, L. C.; Alves, E.; Leitão, M. P.; Rodrigues, J.; Ben Sedrine, N.; Correia, M. R.; Monteiro, T.
2016-02-01
Compositional grading of InGaN/GaN multi quantum wells (QWs) was proposed to mitigate polarization effects and Auger losses in InGaN-based light emitting diodes [K. P. O'Donnell et al., Phys. Status Solidi RRL 6 (2012) 49]. In this paper we are reviewing our recent attempts on achieving such gradient via quantum well intermixing. Annealing up to 1250 °C resulted in negligible interdiffusion of QWs and barriers revealing a surprising thermal stability well above the typical MOCVD growth temperatures. For annealing at 1400 °C results suggest a decomposition of the QWs in regions with high and low InN content. The defect formation upon nitrogen implantation was studied in detail. Despite strong dynamic annealing effects, which keep structural damage low, the created defects strongly quench the QW luminescence even for low implantation fluences. This degradation could not be reversed during thermal annealing and is hampering the use of implantation induced quantum well intermixing in InGaN/GaN structures.
Guiding effect of quantum wells in semiconductor lasers
Energy Technology Data Exchange (ETDEWEB)
Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N
2013-05-31
The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)
Design and Analysis of a Multicolor Quantum Well Infrared Photodetector
National Research Council Canada - National Science Library
Alves, Fabio D. P
2005-01-01
.... These characteristics have been found in quantum well infrared photodetectors (QWIP). Driven by these applications, a QWIP photodetector capable of detecting simultaneously infrared emissions within near infrared (NIR...
Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells
International Nuclear Information System (INIS)
Founta, S.; Bougerol, C.; Mariette, H.; Daudin, B.; Vennegues, P.
2007-01-01
The growth of (11-20) or a-plane quantum dots and quantum wells by plasma-assisted molecular-beam epitaxy has been studied. It is shown that Ga-rich conditions lead to the formation of quantum dots, whereas quantum wells are obtained in N-rich conditions. Combining various experimental techniques, it is furthermore demonstrated that quantum dot nucleation along [1-100] and quantum well morphology in the (1-100) plane are influenced by anisotropic growth of AlN buffer layer. Moreover, it is established that peculiar morphological features of quantum dots and quantum wells, in particular the asymmetric shape of quantum dots, are related to the polar character of the [0001] direction in wurtzite nitride material
Biexciton binding energy in ZnSe quantum wells and quantum wires
DEFF Research Database (Denmark)
Wagner, Hans-Peter; Langbein, Wolfgang; Hvam, Jørn Märcher
2002-01-01
The biexciton binding energy E-XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating fo...
Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots
Energy Technology Data Exchange (ETDEWEB)
Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)
2016-05-03
This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.
Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study
Energy Technology Data Exchange (ETDEWEB)
Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)
2014-05-15
The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.
Quantum wells physics and electronics of two-dimensional systems
Shik, A
1998-01-01
This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-un
New Results in Optical Modelling of Quantum Well Solar Cells
Directory of Open Access Journals (Sweden)
Silvian Fara
2012-01-01
Full Text Available This project brought further advancements to the quantum well solar cell concept proposed by Keith Barnham. In this paper, the optical modelling of MQW solar cells was analyzed and we focussed on the following topics: (i simulation of the refraction index and the reflectance, (ii simulation of the absorption coefficient, (iii simulation of the quantum efficiency for the absorption process, (iv discussion and modelling of the quantum confinement effect, and (v evaluation of datasheet parameters of the MQW cell.
Exciton absorption of entangled photons in semiconductor quantum wells
Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team
2013-03-01
The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes
Photoluminescence from narrow InAs-AlSb quantum wells
Brar, Berinder; Kroemer, Herbert; Ibbetson, James; English, John H.
1993-01-01
We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.
Multichannel scattering of charge carriers on quantum well heterostructures
Galiev, V I; Polupanov, A F; Goldis, E M; Tansli, T L
2002-01-01
An efficient numerical analytical method has been developed for finding continuum spectrum states in quantum well systems with arbitrary potential profiles that are described by coupled Schroedinger equations. Scattering states and S matrix have been built for the case of multichannel scattering in one-dimensional systems with quantum wells and their symmetry properties are obtained and analyzed. The method is applied for studying hole scattering by strained GaInAs-InGaAsP quantum wells. Coefficients of the hole transmission and reflection as well as delay time are calculated as functions of the energy of the incident hole for various values of parameters of structures and values of the momentum
Emission from radiatively coupled periodic quantum well structures
Hübner, M.; Ell, C.; Brick, P.; Prineas, J.; Khitrova, G.; Gibbs, H. M.; Hoyer, W.; Kira, M.; Koch, S. W.
We study light emission from large number periodic quantum well (PQW) structures following nonresonant excitation into the free carrier continuum. We investigate the spectrally resolved excitonic emission from high quality InGaAs/GaAs PQW structures with up to N=100 quantum wells in dependence on the period d and the number N of quantum wells. By tuning the period in a range of up to 30% around the excitonic Bragg resonance, we find for N≥30 large normal mode splitting and a nonlinear increase of the vertical emission with the number of coupled wells. Angle dependent detection reveals a complex spatial emission.
Entanglement between a Photon and a Quantum Well
Hoyer, W.; Kira, M.; Koch, S. W.; Stolz, H.; Mosor, S.; Sweet, J.; Ell, C.; Khitrova, G.; Gibbs, H. M.
2004-08-01
The lack of translational invariance perpendicular to the plane of a single quantum well causes equal probability for spontaneous emission to the left or right. Combining one emission path from the left and one from the right into a common detector leads to interference fringes for fundamentally indistinguishable paths corresponding to geometries where the same in-plane momentum is transferred to the quantum well. For all other paths, no interference is observed because of the entanglement between the photon and extended Bloch states of the many-body system. In multiple-quantum-well structures the interference can be controlled via the spacing between the wells.
Fisher information and quantum potential well model for finance
International Nuclear Information System (INIS)
Nastasiuk, V.A.
2015-01-01
The probability distribution function (PDF) for prices on financial markets is derived by extremization of Fisher information. It is shown how on that basis the quantum-like description for financial markets arises and different financial market models are mapped by quantum mechanical ones. - Highlights: • The financial Schrödinger equation is derived using the principle of minimum Fisher information. • Statistical models for price variation are mapped by the quantum models of coupled particle. • The model of quantum particle in parabolic potential well corresponds to Efficient market
Crystal Phase Quantum Well Emission with Digital Control
Assali, S.; Lähnemann, J.; Vu, TTT; Jöns, K.D.; Gagliano, L; Verheijen, M. A.; Akopian, N.; Bakkers, E.P.A.M.; Haverkort, J. E.M.
2017-01-01
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the
Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems
Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih
2009-01-01
In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…
Tunnelling and relaxation in semiconductor double quantum wells
International Nuclear Information System (INIS)
Ferreira, R.; Bastard, G.
1997-01-01
Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)
Magnetic resonance spectroscopy of single centers in silicon quantum wells
Energy Technology Data Exchange (ETDEWEB)
Bagraev, Nikolay T., E-mail: impurity.dipole@mail.ioffe.r [Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation); Klyachkin, Leonid E.; Kudryavtsev, Andrey A.; Malyarenko, Anna M. [Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation)
2009-12-15
We present the new optically detected magnetic resonance (ODMR) technique which reveals single point defects in silicon quantum wells embedded in microcavities within frameworks of the excitonic normal-mode coupling (NMC) without the external cavity and the hf source.
Laser gain spectra of quantum wells and multiplasmon optical transitions
International Nuclear Information System (INIS)
Gurau, V.
2005-01-01
A novel multi-plasmon concept of a light absorption and laser gain of low-dimensional structures are comprehensively discussed. A Generalized Semiconductor Bloch Equations are derived with account of multi-plasmon optical transitions in direct gap quantum wells, using the cumulant expansion method and fluctuation-dissipation theorem. We present results of computer simulations concerning gain spectra of In 0.05 Ga 0.95 As quantum wells with account of multiplasmon optical transitions in two-dimensional systems. Multi-quantum LO-phonon-plasmon optical transitions are investigated with account of coherent memory effects in quantum wells. It is shown that a red shift of the absorption edge can be caused, not only by known mechanism of band gap shrinkage, but also by multi-plasmon transitions. The electron-hole plasma properties in the active region of the laser device and its interaction with the optical field are studied on a microscopic level using obtained Generalized Semiconductor Bloch Equations. The comparison with other theories and experimental data measured in In 0.05 Ga 0.95 As quantum wells is performed. The gain value g=50 cm -1 in 8 nm In 0.05 Ga 0.95 As quantum wells is obtained at a surface density of electrons nd 0 =1.64 10 -12 cm -2 . (authors)
The quantum Zeno effect in double well tunnelling
Lerner, L.
2018-05-01
Measurement lies at the heart of quantum theory, and introductory textbooks in quantum mechanics cover the measurement problem in topics such as the Schrödinger’s cat thought experiment, the EPR problem, and the quantum Zeno effect (QZE). In this article we present a new treatment of the QZE suitable for undergraduate students, for the case of a particle tunnelling between two wells while being observed in one of the wells. The analysis shows that as the observation rate increases, the tunnelling rate tends towards zero, in accordance with Zeno’s maxim ‘a watched pot never boils’. The method relies on decoherence theory, which replaces aspects of quantum collapse by the Schrödinger evolution of an open system, and its recently simplified treatment for undergraduates. Our presentation uses concepts familiar to undergraduate students, so that calculations involving many-body theory and the formal properties of the density matrix are avoided.
Zero field spin splitting in asymmetric quantum wells
International Nuclear Information System (INIS)
Hao Yafei
2012-01-01
Spin splitting of asymmetric quantum wells is theoretically investigated in the absence of any electric field, including the contribution of interface-related Rashba spin-orbit interaction as well as linear and cubic Dresselhaus spin-orbit interaction. The effect of interface asymmetry on three types of spin-orbit interaction is discussed. The results show that interface-related Rashba and linear Dresselhaus spin-orbit interaction can be increased and cubic Dresselhaus spin-orbit interaction can be decreased by well structure design. For wide quantum wells, the cubic Dresselhaus spin-orbit interaction dominates under certain conditions, resulting in decreased spin relaxation time.
Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells
Directory of Open Access Journals (Sweden)
A Bianconi
2006-09-01
Full Text Available The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.
Electronic states in parabolic versus diffused quantum wells
International Nuclear Information System (INIS)
Vlaev, S.J.; Gaggero S, L.M.; Contreras S, D.A.; Hernandez C, I.
1998-01-01
Numerical calculations are performed to determine the energies of the electronic bound states in parabolic and diffused quantum wells. A comparison of the electronic spectra for these concentration profiles is made and equidistant energy levels for a diffused quantum are found. The virtual crystal approximation and the surface Green function matching (SGFM) method are used within the framework of a semi-empirical sp 3 s * spin-dependent tight binding model. (Author)
Quantum well electronic states in a tilted magnetic field.
Trallero-Giner, C; Padilha, J X; Lopez-Richard, V; Marques, G E; Castelano, L K
2017-08-16
We report the energy spectrum and the eigenstates of conduction and uncoupled valence bands of a quantum well under the influence of a tilted magnetic field. In the framework of the envelope approximation, we implement two analytical approaches to obtain the nontrivial solutions of the tilted magnetic field: (a) the Bubnov-Galerkin spectral method and b) the perturbation theory. We discuss the validity of each method for a broad range of magnetic field intensity and orientation as well as quantum well thickness. By estimating the accuracy of the perturbation method, we provide explicit analytical solutions for quantum wells in a tilted magnetic field configuration that can be employed to study several quantitative phenomena.
Stark-like electron transfer between quantum wells
International Nuclear Information System (INIS)
Dubovis, S.A.; Voronko, A.N.; Basharov, A.M.
2008-01-01
The Stark-like mechanism of electron transfer between two energy subband localized in remote quantum wells is examined theoretically. Estimations of major parameters of the problem in case of delta-function-wells model are adduced. Schematic model allowing experimental study of Stark-like transfer is proposed
Intrinsic spin lifetimes in GaAs (110) quantum wells
Energy Technology Data Exchange (ETDEWEB)
Mueller, Georg; Roemer, Michael; Huebner, Jens; Oestreich, Michael [Institut fuer Festkoerperphysik, Gottfried Wilhelm Leibniz Universitaet Hannover, Hannover (Germany); Schuh, Dieter; Wegscheider, Werner [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg (Germany)
2009-07-01
GaAs(110) quantum wells attract great attention due to the long spin lifetime for electron spins along the growth axis and are, therefore, of interest for future spin based optoelectronic devices. At low temperatures, optical injection of a finite spin polarization yields strongly enhanced spin dephasing due to the Bir Aronov Pikus mechanism that arises from the exchange interaction between electrons and holes. Thus, the intrinsic spin lifetime in GaAs(110) quantum wells has been unknown. In this work, the non-demolition technique of spin noise spectroscopy, which only relies on statistical spin fluctuations, is applied to GaAs(110) quantum wells in order to measure the intrinsic spin lifetimes. Furthermore, the Brownian motion of the electrons modifies the linewidth of the measured spin noise spectra due to time of flight broadening. This effect uniquely allows to study electronic motion at thermal equilibrium.
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells.
Miah, M Idrish
2009-01-17
We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P(PL)) with and without magnetic field is studied. The P(PL) without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However, P(PL) in a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange interaction in the electric field.
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells
Directory of Open Access Journals (Sweden)
Miah M
2009-01-01
Full Text Available Abstract We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P PL with and without magnetic field is studied. TheP PLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,P PLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field.
Detection of electromagnetic radiation using micromechanical multiple quantum wells structures
Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN
2007-07-17
An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.
Analytic methods for field induced tunneling in quantum wells with ...
Indian Academy of Sciences (India)
Quantum wells (QW) formed in the semiconductor heterostructures have been given con- siderable theoretical attention because of their optical device applications [1]. For under- standing the operating principles of devices, it is necessary to study the optical absorption spectra in the QW under an applied dc electric field ...
Design and Analysis of a Multicolor Quantum Well Infrared Photodetector
2005-09-01
Instituto Tecnologico de Aeronautica, 1997 Submitted in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE IN ELECTRICAL...Applied Physics Letters, Vol. 51, No. 4, pp. 934-936, 1988. [36] R. P. Karunasiri, J. S. Park and K. L. Wang, “ Progress of SiGe/Si Quantum Wells
Density of states in an electrically biased quantum well
Indian Academy of Sciences (India)
Abstract. Density of states in a quantum well has been studied in the presence of an electric field applied perpendicular to the growth direction. We have shown that an extra quantization is introduced to the motion of the electron due to the discrete energy levels known as Wannier–Stark ladder states and the nature of ...
Energy levels in rectangular quantum well wires based on a ...
Indian Academy of Sciences (India)
In the previous work, the gradient of the effective mass was considered as a suitable Dirac delta function [11]. But in the real world, the effective mass cannot change abruptly across the heterojunction, because, the discontinuity of the square quantum well model implies an infinite internal electric field at the heterojunctions,.
Kroemer, Herbert
1990-01-01
Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.
Analytic methods for field induced tunneling in quantum wells with ...
Indian Academy of Sciences (India)
Electric ﬁeld induced tunneling is studied in three different types of quantum wells by solving time-independent effective mass equation in analytic methods based on three different Airy function approaches. Comparison of different Airy function methods indicates that they are identical and connected to each other by the ...
Crystal Phase Quantum Well Emission with Digital Control
DEFF Research Database (Denmark)
Assali, S.; Laehnemann, J.; Vu, Thi Thu Trang
2017-01-01
-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement...... of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier...
Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results
Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.
1999-01-01
The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.
Design rules for modulation doped AlAs quantum wells
Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Kamburov, D.; Shayegan, M.; Pfeiffer, L. N.
AlxGa1-xAs/AlAs/AlxGa1-xAs quantum wells were grown with various barrier compositions ranging from x =0.26 to x =0.8. We investigate the modulation doping characteristics of the samples by magneto-transport measurements. The carrier concentration in the well peaks near the barrier alloy fraction of x =0.26 in the dark and near x =0.38 after illumination with a red LED. This behavior is consistent with the results in a separate study for AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells in the range of x =0.26 to x =1.0. We show from a charge transfer model that the calculated energy difference between the conduction band offset at the well interface and the donor energy level, ΔEC-ED, coincides for the two types of wells. This implies that, despite the differing positions of the conduction band minimum for the GaAs and AlAs wells, the doping of either well is governed by the electronic properties of the barrier. Based on this knowledge we designed high quality AlAs quantum wells with low (1 x 1011 cm-2) and high (3 x 1011 cm-2) density, and the magneto-transport data show clear signals of the fractional quantum Hall effect (2/3, 3/5, 4/7 for low density and 5/3, 8/5 for high density). Work supported by the NSF (Grants DMR-1305691, ECCS-1508925, and MRSEC DMR-1420541), the DOE Basic Energy Sciences (Grant DE-FG02-00-ER45841), the Gordon and Betty Moore Foundation (Grant GBMF4420), and the Keck Foundation.
Electron transport in InAs/AlSb quantum wells
International Nuclear Information System (INIS)
Tuttle, G.; Kroemer, H.; English, J.H.
1989-01-01
The authors present data on electron transport in AlSb/InAs/AlSb quantum wells grown by molecular beam epitaxy. Because both anion and cation change across an InAs/Alsb interface, it is possible to grow such wells with two different types of interfaces, one with an InSb-like bond configuration, the other AlAs-like. Electron mobility and concentration were found to depend very strongly on the manner in which the quantum well's interfaces were grown, with high mobilities seen only if the bottom interface is InSb-like. An As-on-Al sites antisite defect model is postulated for bottom AlAs-like interfaces
Weak antilocalization and spin precession in quantum wells
Knap, W.; Skierbiszewski, C.; Zduniak, A.; Litwin-Staszewska, E.; Bertho, D.; Kobbi, F.; Robert, J. L.; Pikus, G. E.; Pikus, F. G.; Iordanskii, S. V.; Mosser, V.; Zekentes, K.; Lyanda-Geller, Yu. B.
1996-02-01
The results of magnetoconductivity measurements in GaxIn1-xAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed that takes into account both linear and cubic in electron wave-vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms that appear when the well itself is asymmetric. It is established that, unlike spin-relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation [(0.98-1.85)×1012 cm-2 ] all three contributions are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in A3B5 crystals and two-dimensional structures.
Dynamics of spins in semiconductor quantum wells under drift
International Nuclear Information System (INIS)
Idrish Miah, M.
2009-01-01
The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P PL ) was measured at different temperatures. The P PL was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P PL was also found to depend on the temperature. The P PL in the presence of a transverse magnetic field was also studied. The results showed that P PL in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.
Dynamics of spins in semiconductor quantum wells under drift
Energy Technology Data Exchange (ETDEWEB)
Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)
2009-09-15
The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P{sub PL}) was measured at different temperatures. The P{sub PL} was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P{sub PL} was also found to depend on the temperature. The P{sub PL} in the presence of a transverse magnetic field was also studied. The results showed that P{sub PL} in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.
High mobility and quantum well transistors design and TCAD simulation
Hellings, Geert
2013-01-01
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...
Intersubband Transitions in InAs/AlSb Quantum Wells
Li, J.; Koloklov, K.; Ning, C. Z.; Larraber, D. C.; Khodaparast, G. A.; Kono, J.; Ueda, K.; Nakajima, Y.; Sasa, S.; Inoue, M.
2003-01-01
We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k-p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.
Surface states in thin versus thick organic quantum wells
International Nuclear Information System (INIS)
Nguyen Ba An; Hanamura, E.
1995-08-01
Surface states are studied in dependence on thickness or organic quantum wells within the nearest layer approximation. It is shown that there is a material-dependent critical thickness. Structures, that have thickness thinner or thicker than the critical one, exhibit qualitatively different characteristics of surface states. Criteria for existence and sign rules for location of energy levels of surface states are established which are general and contain the results of the previous works as particular cases. (author). 18 refs, 3 figs
Impurity binding energy for δ-doped quantum well structures
Indian Academy of Sciences (India)
Administrator
Abstract. The binding energy of an impurity delta layer situated either in the centre or at the edge of a quantum well (QW) is theoretically considered for the example of n-type Si0∙8Ge0∙2/Si/Si0∙8Ge0∙2 QW doped with phosphorus. Calculations are made for the case of not so big impurity concentrations, when impurity.
GaAs/InAs Multi Quantum Well Solar Cell
2012-12-01
a problem without exceeding the critical thickness of 3ML or 7 Å, growing in direction 001. That is because the strain tensor depends on the...symmetry of the crystal. Structures with thicknesses greater than the critical thickness cause the strain to relax, creating dislocations and leading to a...Industry Co., LTD, gave a solution that is detailed in their paper, “ Magnetoresistance Effect of InAs Deep Quantum Well Structures Grown on GaAs
Excitonic effects in the luminescence of quantum wells
International Nuclear Information System (INIS)
Deveaud, B.; Kappei, L.; Berney, J.; Morier-Genoud, F.; Portella-Oberli, M.T.; Szczytko, J.; Piermarocchi, C.
2005-01-01
We report on the origin of the excitonic luminescence in quantum wells. This study is carried out by time-resolved photoluminescence experiments performed on a very high-quality InGaAs quantum well sample in which the photoluminescence contributions at the energy of the exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. This allows us to compare the two conflicting theoretical approaches to the question of the origin of the excitonic luminescence in quantum wells: the model of the exciton population and the model of the Coulomb correlated plasma. We measure the exciton formation time and we show the fast exciton formation and its dependence with carrier density. We are also able to give the boundaries of the Mott transition in our system, and to show the absence of observable renormalization of the gap below the onset of this transition. We detail the characteristics of the trion formation and evidence the possible formation of both positive and negative trions in the absence of any resident free carrier populations
Quantum theory of luminescence in multiple-quantum-well Bragg structures
Schäfer, M.; Werchner, M.; Hoyer, W.; Kira, M.; Koch, S. W.
2006-10-01
The quantum emission in radiatively coupled semiconductor multiple-quantum-well structures is investigated theoretically. It is shown that coupling effects can lead to a subradiant suppression of the emission compared to the emission of a single quantum well (QW). The suppression strength depends on the number and spacing of the QWs as well as on the homogeneous broadening and leads to an enhancement of the radiative lifetime of excitons in the structure. The strongest lifetime enhancement is found for Bragg-arranged QWs with small homogeneous broadening. Additionally, the radiative coupling between the QWs provides an exciton pumping mechanism such that excitons can directly be created into the state that has vanishing center-of-mass momentum.
Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells
Energy Technology Data Exchange (ETDEWEB)
Park, Kwangwook [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ju, Gunwu [Gwangju Institute of Science and Technology; Korea Institute of Science and Technology; Na, Byung Hoon [Samsung Advanced Institute of Technology; Hwang, Hyeong-Yong [Gwangju Institute of Science and Technology; Jho, Young-Dahl [Gwangju Institute of Science and Technology; Myoung, NoSoung [Gwangju Institute of Science and Technology; Yim, Sang-Youp [Gwangju Institute of Science and Technology; Kim, Hyung-jun [Korea Institute of Science and Technology; Lee, Yong Tak [Gwangju Institute of Science and Technology
2018-02-06
We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.
Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Xu, Xingsheng, E-mail: xsxu@semi.ac.cn [State Key Laboratory of Integration Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
2015-03-02
For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreased with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.
Eigenstate localization in an asymmetric coupled quantum well pair
DEFF Research Database (Denmark)
Mialitsin, Aleksej; Schmult, Stefan; Solov'yov, Ilia
2012-01-01
exclusively either in the wide or the narrow parts of the well pair. The energy of the narrow-well localized state determines the minimal excitation energy for optically pumped charge carriers separation. In a previously used design [Guliamov et al., PRB 64 035314 (2001)] this narrow well transition energy......Optical pumping of a type-I/type-II coupled asymmetric quantum well pair induces a spatially separated two dimensional charge carriers plasma in the well’s wide and narrow parts. Treating the two coupled wells as a single system we find that the eigenstate probability distribution localizes...... was measured to correspond to a wavelength of 646 nm. We propose modifications to the design suggested earlier with the purpose of pushing up the energy required for the optical pumping of the two-dimensional plasma into the green and blue regions of the visible spectrum....
Imaging currents in HgTe quantum wells in the quantum spin Hall regime
Energy Technology Data Exchange (ETDEWEB)
Nowack, Katja C.; Spanton, Eric M.; Baenninger, Matthias; König, Markus; Kirtley, John R.; Kalisky, Beena; Ames, C.; Leubner, Philipp; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens W.; Goldhaber-Gordon, David; Moler, Kathryn A.
2013-06-16
The quantum spin Hall (QSH) state is a state of matter characterized by a non-trivial topology of its band structure, and associated conducting edge channels. The QSH state was predicted and experimentally demonstrated to be realized in HgTe quantum wells. The existence of the edge channels has been inferred from local and non-local transport measurements in sufficiently small devices. Here we directly confirm the existence of the edge channels by imaging the magnetic fields produced by current flowing in large Hall bars made from HgTe quantum wells. These images distinguish between current that passes through each edge and the bulk. On tuning the bulk conductivity by gating or raising the temperature, we observe a regime in which the edge channels clearly coexist with the conducting bulk, providing input to the question of how ballistic transport may be limited in the edge channels. Our results represent a versatile method for characterization of new QSH materials systems.
Recent Developments in Quantum-Well Infrared Photodetectors
Gunapala, S. D.; Bandara, K. M. S. V.
1995-01-01
Intrinsic infrared (IR) detectors in the long wavelength range (8-20 Am) are based on an optically excited interband transition, which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band as shown. These photoelectrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the photon (h(sub upsilon)) must be higher than the E(sub g) of the photosensitive material. Therefore, the spectral response of the detectors can be controlled by controlling the E(sub g) of the photosensitive material. Examples for such materials are Hg(1-x), Cd(x), Te, and Pb(1-x), Sn(x), Te, in which the energy gap can be controlled by varying x. This means detection of very-long-wavelength IR radiation up to 20 microns requires small band gaps down to 62 meV. It is well known that these low band gap materials, characterized by weak bonding and low melting points, are more difficult to grow and process than large-band gap semiconductors such as GaAs. These difficulties motivate the exploration of utilizing the intersub-band transitions in multiquantum well (MQW) structures made of more refractory large-band gap semiconductors. The idea of using MQW structures to detect IR radiation can be explained by using the basic principles of quantum mechanics. The quantum well is equivalent to the well-known particle in a box problem in quantum mechanics, which can be solved by the time independent Schroudiner equation.
Arslan, Seval; Demir, Abdullah; Şahin, Seval; Aydınlı, Atilla
2018-02-01
In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO2 and Si x O2/SrF2 (versus SrF2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O2 layer compensates for the large thermal expansion coefficient mismatch of SrF2 with the semiconductor and mitigates the detrimental effects of SrF2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric–semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.
Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells
Directory of Open Access Journals (Sweden)
Andrey A. Chernyuk
2006-02-01
Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.
Lateral photocurrent spreading in single quantum well infrared photodetectors
Ershov, Maxim
1998-01-01
Lateral physical effects in single quantum well infrared photodetectors (SQWIPs) under non-uniform illumination over detector area are considered. These effects are due mainly to the in-plane transport of the photoinduced charge in the QW. The length of the lateral photocurrent spreading is determined by the in-plane conductivity of the carriers in the QW and characteristic time of the QW recharging, and can be as large as 10-10000 mkm. Closed-form analytical expressions for SQWIP responsivit...
Quantum-well-driven magnetism in thin films
DEFF Research Database (Denmark)
Mirbt, S.; Johansson, B.; Skriver, Hans Lomholt
1996-01-01
We have performed local spin-density calculations for an fee (100) Ag substrate covered by 1 to 16 monolayers (ML) of Pd. We find that thin films of Pd are magnetic with a moment of the order of 0.3 mu(B) except for films of 1-2 ML and 5-7 ML where magnetism is completely suppressed. We present...... a physically transparent explanation of this behavior in terms of the Stoner picture and magnetic quantum-well states....
PbSe Quantum Well VECSEL on Si
Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.
2011-12-01
Vertical external cavity surface emitting lasers in the wavelength region from 3-5 μm are presented. They are based on PbSe quantum wells grown on Si substrates. As host material Pb1-xEuxSe and Pb1-xSrxSe are used. With Pb1-xSrxSe as host material maximum operation temperatures of 325 K are achieved, while with Pb1-xEuxSe an operation temperature of 245 K could not be overcome. This may be explained by a band alignment transition from type I to type II with increasing temperature.
Bose condensation of interwell excitons in double quantum wells
Larionov, A V; Ni, P A; Dubonos, S V; Hvam, I; Soerensen, K
2002-01-01
The luminescence of the interwell excitons in the GaAs/AlGaAs double quantum wells, containing large-scale fluctuations of the random potential in the heteroboundary planes, is studied. The properties of the excitons, wherein the excited electron and hole are spatially separated between the neighboring quantum wells by the density and temperature variation within the domain limits of the scale below one micron, are investigated. The interwell excitons by low pumping (below 50 mW) are strongly localized due to the small-scale fluctuations of the random potential. The localized excitons line grows by increase in the resonance excitation capacity through the threshold method. With the temperature growth this line disappears in the spectrum (T sub c <= 3.4 K). The above phenomenon is related to the Bose-Einstein condensation in the quasi-two-dimensional system of the interwell excitons. The critical values of the exciton density and temperature in the studied temperature range (1.5-3.4 K) grow according to the...
Bhuyan, Sumi; Mondal, Richarj; Pal, Bipul; Bansal, Bhavtosh
2018-03-01
We have closely examined the emission spectrum at the heavy-hole exciton resonance in a high-quality GaAs multi-quantum well sample using picosecond excitation-correlation photoluminescence (ECPL) spectroscopy. Dynamics of the ECPL signal at low and high energy sides of the excitonic photoluminescence (PL) peak show complementary behavior. The ECPL signal is positive (negative) below (above) the PL peak and it changes sign within a narrow band of energy lying between the excitonic absorption and emission peaks. The energy at which this sign change takes place is interpreted as the excitonic mobility edge as it separates localized excitons in quantum dot-like states from mobile excitons in quantum well-like states.
Capacitance-voltage characteristics of quantum well structures
Moon, C R; Choe, B D
1999-01-01
The characteristics of the apparent carrier distribution (ACD) of quantum well (QW) structures are investigated using the self-consistent simulation and the capacitance-voltage (C-V) profiling techniques. The simulation results on the differential carrier distribution show that the change of position expectation value of two-dimensional electrons determines the full width at half maximum of 100 K ACD peaks when conduction band offset is DELTA E sub c = 160 meV and the QW width t sub w is greater than 120 A. The contribution of Debye averaging effects to the ACD peaks becomes important as t sub w and DELTA E sub c values decrease and the temperature is increased. The influence of Debye averaging effects on ACD peaks appears differently according to the location of each well in multiple QWs. These results indicate that the extraction of QW parameters from the C-V profile should be done with caution.
Size-dependent electronic eigenstates of multilayer organic quantum wells
International Nuclear Information System (INIS)
Nguyen Ba An; Hanamura, E.
1995-09-01
A detailed theoretical treatment is given eigenfunctions and eigenenergies of a multilayer organic quantum well sandwiched between two different dielectric media. The abrupt change of dielectric constants at the interfaces distorts the wave function and results in possible surface states in addition to propagating states. The proper boundary conditions are accounted for by the method of image charges. Analytic criteria for existence of surface states are established using the nearest layers approximation, which depend not only on the intralayer parameters but also on the number of layers. The size dependence together with the dependence on signs and relative magnitudes of the structure parameters fully determine the energy spectrum of propagating states as well as the number and the location of surface states. (author). 28 refs, 10 figs, 2 tabs
Low temperature photoluminescence in ultra-thin germanium quantum wells
Energy Technology Data Exchange (ETDEWEB)
Rodrigues, P.A.M. [Brasilia Univ., DF (Brazil). Inst. de Fisica; Araujo-Silva, M.A. [Ceara Univ., Fortaleza, CE (Brazil). Dept. de Fisica; Narvaez, G.A.; Cerdeira, F. [Universidade Estadual de Campinas, SP (Brazil). Inst. de Fisica; Bean, J.C. [Virginia Univ., Charlottesville, VA (United States). Dept. of Electical Engineering
1999-09-01
We measured the photoluminescence (P L) spectra of a series of Ge{sub n} quantum wells as a function of temperature, from 2 K to 50 K. The P L spectra at 2.1 K are dominated by broad emission lines, which can be interpreted as recombination across the indirect gap of the Si?Ge microstructure and are strongly influenced by the interface morphology of each sample. Beyond T>{sub {approx}} 15 K, all samples show identical spectra in which the broad structures are replaced by thin, strong lines. We interpret these changes as a quenching of the recombination across the gap P L of the microstructure and the appearance of defect-related peaks from the Si substrate. (author)
Color center lasers passively mode locked by quantum wells
International Nuclear Information System (INIS)
Islam, M.N.; Soccolich, C.E.; Bar-Joseph, I.; Sauer, N.; Chang, T.Y.; Miller, B.I.
1989-01-01
This paper describes how, using multiple quantum well (MQW) saturable absorbers, the authors passively mode locked a NaCl color center laser to produce 275 fs transform-limited, pedestal-free pulses with as high as 3.7 kW peak power. The pulses are tunable from λ = 1.59 to 1.7 μm by choosing MQW's with different bandgaps. They shortened the output pulses from the laser to 25 fs using the technique of soliton compression in a fiber. The steady-state operation of the laser requires the combination of a fast saturable absorber and gain saturation. In addition to the NaCl laser, they passively mode locked a Tl 0 (1):KCl color center laser and produced -- 22 ps pulses. Although the 275 fs pulses from the NaCl laser are Gaussian, when broadened, the pulses acquire an asymmetric spectrum because of carrier-induced refractive index changes
Crystal orientation effects on wurtzite quantum well electromechanical fields
DEFF Research Database (Denmark)
Duggen, Lars; Willatzen, Morten
2010-01-01
in the literature for semiconductors, is inaccurate for ZnO/MgZnO heterostructures where shear-strain components play an important role. An interesting observation is that a growth direction apart from [1̅ 21̅ 0] exists for which the electric field in the quantum well region becomes zero. This is important for, e......A one-dimensional continuum model for calculating strain and electric field in wurtzite semiconductor heterostructures with arbitrary crystal orientation is presented and applied to GaN/AlGaN and ZnO/MgZnO heterostructure combinations. The model is self-consistent involving feedback couplings...... of spontaneous polarization, strain, and electric field. Significant differences between fully coupled and semicoupled models are found for the longitudinal and shear-strain components as a function of the crystal-growth direction. In particular, we find that the semicoupled model, typically used...
Benefits of quantum well intermixing in high power diode lasers
Najda, Stephen P.; Bacchin, Gianluca; Qiu, Bocang; Liu, Xuefeng; Kowalski, Olek P.; Silver, Mark; McDougall, Stewart D.; Hamilton, Craig J.; Marsh, John H.
2004-05-01
Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be up to ~20% of the cavity length, giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.
Frictional drag between quantum wells mediated by phonon exchange
DEFF Research Database (Denmark)
Bønsager, M.C.; Flensberg, Karsten; Hu, Ben Yu-Kuang
1998-01-01
We use the Kubo formalism to evaluate the contribution of acoustic-phonon exchange to the frictional drag between nearby two-dimensional electron systems. In the case of free phonons, we find a divergent drag rate (tau(D)(-l)). However, tau(D)(-l) becomes finite when phonon scattering from either...... lattice imperfections or electronic excitations is accounted for. In the case of GaAs quantum wells, we find that for a phonon mean free path l(ph) smaller than a critical value, imperfection scattering dominates and the drag rate varies as ln(l(ph)/d) over many orders of magnitude of the layer separation...... d. When l(ph) exceeds the critical value, the drag rate is dominated by coupling through an electron-phonon collective mode localized in the vicinity of the electron layers. We argue that the coupled electron-phonon mode may be observable for realistic parameters. Our theory is in good agreement...
Transport studies in p-type double quantum well samples
International Nuclear Information System (INIS)
Hyndman, R.J.
2000-01-01
The motivation for the study of double quantum well samples is that the extra spatial degree of freedom can modify the ground state energies of the system, leading to new and interesting many body effects. Electron bi-layers have been widely studied but the work presented here is the first systematic study of transport properties of a p-type, double quantum well system. The samples, grown on the 311 plane, consisted of two 100A GaAs wells separated by a 30A AlAs barrier. The thin barrier in our structures, gives rise to very strong inter-layer Coulombic interactions but in contrast to electron double quantum well samples, tunnelling between the two wells is very weak. This is due to the large effective mass of holes compared with electrons. It is possible to accurately control the total density of a sample and the relative occupancy of each well using front and back gates. A systematic study of the magnetoresistance properties of the p-type bi-layers, was carried out at low temperatures and in high magnetic fields, for samples covering a range of densities. Considerable care was required to obtain reliable results as the samples were extremely susceptible to electrical shock and were prone to drift in density slowly over time. With balanced wells, the very low tunnelling in the p-type bi-layer leads to a complete absence of all odd integers in both resistance and thermopower except for the v=1 state, ( v 1/2 in each layer) where v is the total Landau level filling factor. Unlike other FQHE features the v=1 state strengthens with increased density as inter-layer interactions increase in strength over intra-layer interactions. The state is also destroyed at a critical temperature, which is much lower than the measured activation temperature. This is taken as evidence for a finite temperature phase transition predicted for the bi-layer v=1. From the experimental observations, we construct a phase diagram for the state, which agree closely with theoretical predictions
Strong quantum-confined stark effect in germanium quantum-well structures on silicon
International Nuclear Information System (INIS)
Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.
2006-01-01
Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)
Quantum equivalence of a driven triple-well Van der Pol oscillator: A QTM study
International Nuclear Information System (INIS)
Chakraborty, Debdutta; Chattaraj, Pratim Kumar
2014-01-01
Highlights: • Quantum–classical correspondence is manifested at strong external coupling regime. • Suppression of classical chaos takes place in quantum domain. • Quantum chaos promotes quantum diffusion. • Quantum localisation is realised when interference effects are dominant. - Abstract: A quantum mechanical analogue of the classically chaotic triple-well oscillator under the influence of an external field and parametric excitation has been studied by using the quantum theory of motion. The on the fly calculations show the correspondence between some dynamical aspects of the classical and quantum oscillators along with a strictly quantum mechanical behaviour in case of diffusion and tunneling. Suitable external conditions have been obtained which can either assist or suppress the movement of quantum particles from one well to another. Quantum interference effects play a critical role in determining the nature of the quantum dynamics and in the presence of strong coupling to the external forces, quantum interference effects reduce drastically leading to decoherence of the quantum wave packet. In such situations, quantum dynamical features qualitatively resemble the corresponding classical dynamical behaviour and a correspondence between classical and quantum dynamics is obtained
Fisher information and quantum potential well model for finance
Nastasiuk, V. A.
2015-09-01
The probability distribution function (PDF) for prices on financial markets is derived by extremization of Fisher information. It is shown how on that basis the quantum-like description for financial markets arises and different financial market models are mapped by quantum mechanical ones.
Hybridization of electron states in a step quantum well in a magnetic field
International Nuclear Information System (INIS)
Barseghyan, M.G.; Kirakosyan, A.A.
2005-01-01
The quantum states and energy levels of an electrion in a rectangular step quantum well in a magnetic field parallel to the plane of two-dimentional electron gas are investigated. It is shown that the joint effect of the magnetic field and confining potential of the quantum well results in redical change of the electron spectrum. The dependence of the electron energy levels on the quantum well parameters, magnetic field induction and projection of the wave-vector along the magnetic field induction are calculated. Numerical calculations are carried out for a AlAs/GaAlAs/GaAs/AlAs step quantum well
Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells
Susilo, Tri B.
2015-02-01
Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.
Studies of quantum levels in GaInNAs single quantum wells
International Nuclear Information System (INIS)
Shirakata, Sho; Kondow, Masahiko; Kitatani, Takeshi
2006-01-01
Spectroscopic studies have been carried out on the quantum levels in GaInNAs/GaAs single quantum wells (SQWs). Photoluminescence (PL), PL excitation (PLE), photoreflectance (PR), and high-density-excited PL (HDE-PL) were measured on high quality GaInNAs SQWs, Ga 0.65 In 0.35 N 0.01 As 0.99 /GaAs (well thickness: l z =10 nm) and Ga 0.65 In 0.35 N 0.005 As 0.995 /GaAs (l z =3∝10 nm), grown by molecular-beam epitaxy. For Ga 0.65 In 0.35 N 0.01 As 0.99 /GaAs (l z =10 nm), PL at 8 K exhibited a peak at 1.07 eV due to the exciton-related transition between quantum levels of ground states (e1-hh1). Both PR and PLE exhibited three transitions (1.17, 1.20 and 1.32 eV), and the former two transitions were assigned to as either of e1-lh1 and e2-hh2 transitions, while the transition at 1.32 eV was assigned to as the e2-lh2 transition. For HDE-PL, a new PL peak was observed at about 1.2 eV, and it was assigned to the unresolved e1-lh1 and e2-hh2 transitions. Similar optical measurements have been done on the Ga 0.65 In 0.35 N 0.005 As 0.995 /GaAs with various l z (3∝10 nm). Dependence of optical spectra and energies of quantum levels on l z have been studied. It has been found that HDE-PL in combination with PLE is a good tool for the study of the quantum level of GaInNAs SQW. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)
Emergence of the persistent spin helix in semiconductor quantum wells
International Nuclear Information System (INIS)
Koralek, Jake; Weber, Chris; Orenstein, Joe; Bernevig, Andrei; Zhang, Shoucheng; Mack, Shawn; Awschalom, David
2008-01-01
According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH) .2 SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (alpha) and linear Dresselhaus (beta 1), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (beta 3) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as alpha approaches beta 1. Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning alpha and beta 1. Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying beta 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics
Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Koralek, Jake
2011-01-01
According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH). SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (α) and linear Dresselhaus (β 1 ), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (β 3 ) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as α → β 1 . Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning α and β 1 . Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying β 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics.
Theory of the Franz-Keldysh effect in quantum wells
International Nuclear Information System (INIS)
Trallero Giner, C.
1986-09-01
We use the effective-mass approximation to obtain the imaginary part, ε 2 , of the dielectric constant of a quantum well in an applied electric field for direct transitions at a normal (M O ) threshold. The calculations of ε 2 are used to evaluate the real part, ε 1 , of the dielectric constant through the Kramers-Kronig relations. The changes in ε 1 and ε 2 due to the electric field are expressed in terms of the corresponding electrooptic functions. All magnitudes are obtained, neglecting excitonic effects, for electric fields both perpendicular to and in the plane of the layers. We show that for fields parallel to the layers the electrooptic functions turn out to be a superposition of two-dimensional Franz-Keldysh ones. The electrooptic functions for fields perpendicular to the layers show a qualitatively different behaviour from those observed in bulk semiconductors. Analytic expressions for the Lorentzian broadening of ε 1 and ε 2 are given in terms of complex valued electrooptic functions of complex argument. (author)
Wu, Feng
2017-05-03
Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.
High Efficiency Quantum Well Waveguide Solar Cells, Phase I
National Aeronautics and Space Administration — The long-term objective of this program is to develop flexible, lightweight, single-junction solar cells using quantum structured designs that can achieve ultra-high...
Quantum Hall effect in InAs/AlSb double quantum well
International Nuclear Information System (INIS)
Yakunin, M.V.; Podgornykh, S.M.; Sadof'ev, Yu.G.
2009-01-01
Double quantum wells (DQWs) were first implemented in the InAs/AlSb heterosystem, which is characterized by a large Lande g factor |g|=15 of the InAs layers forming the well, much larger than the bulk g factor |g|=0.4 of the GaAs in conventional GaAs/AlGaAs DQWs. The quality of the samples is good enough to permit observation of a clear picture of the quantum Hall effect (QHE). Despite the small tunneling gap, which is due to the large barrier height (1.4 eV), features with odd filling factors ν=3,5,7, ... are present in the QHE, due to collectivized interlayer states of the DQW. When the field is rotated relative to the normal to the layers, the ν=3 state is suppressed, confirming the collectivized nature of that state and denying that it could owe its existence to a strong asymmetry of the DQW. Previously the destruction of the collectivized QHE states by a parallel field had been observed only for the ν=1 state. The observation of a similar effect for ν=3 in an InAs/AlSb DQW may be due to the large bulk g factor of InAs
Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles
International Nuclear Information System (INIS)
Iida, Daisuke; Fadil, Ahmed; Ou, Yiyu; Kopylov, Oleksii; Ou, Haiyan; Chen, Yuntian; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
2015-01-01
We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm 2 , and a factor of 8.1 at 1 W/cm 2 . A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor
Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells
Energy Technology Data Exchange (ETDEWEB)
Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)
2015-11-16
We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.
Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices
Alhashim, Hala H.
2016-05-29
The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in
Non-square quantum well growth for reduced threshold current in ...
African Journals Online (AJOL)
This paper presents calculations demonstrating that non-square quantum well growth (well shaping) can result in reduced threshold current for tensilely strained quantum well bipolar diode lasers operating at 1.52ìm m. Calculations of subband structure, optical matrix elements and laser gain are performed for arbitrarily ...
Density of states in an electrically biased quantum well
Indian Academy of Sciences (India)
most remarkable implication of this type of quantization is quantized Hall effect. Now, if the electric field is applied normal to the growth direction, i.e. parallel to the interface (say x-direction), then the quantum quasi-bound states along the growth direction are no longer affected by the electric field. But, along x-direction,.
Energy levels in rectangular quantum well wires based on a ...
Indian Academy of Sciences (India)
Abstract. The effect of a spatially dependent effective mass on the energy levels in a rectangular quantum wire with finite barrier potential is considered. The heterojunction is modelled by an error function rather than a step function to more accurately model the material transition region at the interface between the two ...
Reentrant quantum anomalous Hall effect with in-plane magnetic fields in HgMnTe quantum wells
Hsu, Hsiu-Chuan; Liu, Xin; Liu, Chao-Xing
2013-08-01
The quantum anomalous Hall effect has been predicted in HgMnTe quantum wells with an out-of-plane magnetization of Mn atoms. However, since HgMnTe quantum wells are paramagnetic, an out-of-plane magnetic field is required to polarize magnetic moments of Mn atoms, which inevitably induces Landau levels and makes it difficult to identify the origin of the quantized Hall conductance experimentally. In this work, we study the quantum anomalous Hall effect in the presence of an in-plane magnetic field in Mn-doped HgTe quantum wells. For a small out-of-plane magnetic field, the in-plane magnetic field can drive the system from a normal insulating state to a quantum anomalous Hall state. When the out-of-plane magnetic field is slightly above the transition point, the system shows a reentrant behavior of Hall conductance, varying from -e2/h to 0 and back to -e2/h, with increasing in-plane magnetic fields. The reentrant quantum anomalous Hall effect originates from the interplay between the exchange coupling of magnetic moments and the direct Zeeman coupling of magnetic fields. The calculation incorporating Landau levels shows that there is no qualitative change of the reentrant behavior.
Electroreflectance investigations of quantum confined Stark effect in GaN quantum wells
International Nuclear Information System (INIS)
Drabinska, A; Pakula, K; Baranowski, J M; Wysmolek, A
2010-01-01
In this paper we present room temperature electroreflectance studies of GaN quantum wells (QWs) with different well width. The electroreflectance measurements were performed with external voltage applied to the structure therefore it was possible to tune the electric field inside QW up to its completely screening and furthermore even reversing it. The analysis of QW spectral lines showed the Stark shift dependence on applied voltage and well width reaching about 35 meV for highest voltage and widest well width. It was possible to obtain the condition of zero electric field in QW. Both broadening and amplitude of QW lines are minimal for zero electric field and increases for increasing electric field in QW. The energy transition is maximum for zero electric field and for increasing electric field it decreases due to Stark effect. Neither amplitude and broadening parameter nor energy transition does not depend on the direction of electric field. Only parameter that depends on the direction of electric field in QW is phase of the signal. The analysis of Franz-Keldysh oscillations (FKOs) from AlGaN barriers allowed to calculate the real electric field dependence on applied voltage and therefore to obtain the Stark shift dependence on electric field. The Stark shift reached from -12 meV to -35 meV for 450 kV/cm depending on the well width. This conditions were established for highest forward voltages therefore this is the value of electric field and Stark shift caused only by the intrinsic polarization of nitrides.
An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells
Energy Technology Data Exchange (ETDEWEB)
Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Dikareva, N. V. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation); Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhny Novgorod, Physical Technical Research Institute (Russian Federation)
2015-02-15
A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.
Femtosecond Cooling of Hot Electrons in CdSe Quantum-Well Platelets
Sippel, Philipp; Albrecht, Wiebke; van der Bok, Johanna C.; Moes, Relinde; Hannappel, Thomas; Eichberger, Rainer; Vanmaekelbergh, Daniel
Semiconductor quantum wells are ubiquitous in high-performance optoelectronic devices such as solar cells and lasers. Understanding and controlling of the (hot) carrier dynamics is essential to optimize their performance. Here, we study hot electron cooling in colloidal CdSe quantum-well
The Double-Well Potential in Quantum Mechanics: A Simple, Numerically Exact Formulation
Jelic, V.; Marsiglio, F.
2012-01-01
The double-well potential is arguably one of the most important potentials in quantum mechanics, because the solution contains the notion of a state as a linear superposition of "classical" states, a concept which has become very important in quantum information theory. It is therefore desirable to have solutions to simple double-well potentials…
Quantum square-well with logarithmic central spike
Czech Academy of Sciences Publication Activity Database
Znojil, Miloslav; Semorádová, Iveta
2018-01-01
Roč. 33, č. 2 (2018), č. článku 1850009. ISSN 0217-7323 R&D Projects: GA ČR GA16-22945S Institutional support: RVO:61389005 Keywords : state-dependence of interactions * effective Hamiltonians * logarithmic nonlinearities * linearized quantum toy model Subject RIV: BE - Theoretical Physics OBOR OECD: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) Impact factor: 1.165, year: 2016
Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED
Meel, K.; Mahala, P.; Singh, S.
2018-03-01
This paper presents the optimization of the multi-quantum well based Light Emitting Diode (LED) structure. We investigate the electrical and optical properties of the device on several factors like well width, barrier width, the number of quantum wells and then optimize the structure. The device is optimized for a well width and barrier width of 3nm and 6nm respectively, consisting of five quantum wells. Simulations were carried out using Silvaco ATLAS TCAD simulation program (Silvaco International, USA). The optimized structure was grown by MOCVD and fabricated. The I-V characteristic was also measured.
The over-barrier resonant states and multi-channel scattering by a quantum well
Directory of Open Access Journals (Sweden)
Alexander F. Polupanov
2008-06-01
Full Text Available We demonstrate an explicit numerical method for accurate calculation ofthe analytic continuation of the scattering matrix, describing the multichannelscattering by a quantum well, to the unphysical region of complexvalues of the energy. Results of calculations show that one or severalpoles of the S-matrix exist, corresponding to the over-barrier resonantstates that are critical for the effect of the absolute reflection at scatteringof the heavy hole by a quantum well in the energy range where only theheavy hole may propagate over barriers in a quantum-well structure.Light- and heavy-hole states are described by the Luttinger Hamiltonianmatrix. The qualitative behaviour of the over-barrier scattering andresonant states is the same at variation of the shape of the quantum-wellpotential, however lifetimes of resonant states depend drastically on theshape and depth of a quantum well.
Role of spatial dispersion of electromagnetic wave at its transmission through quantum well
Korovin, L I; Contreras-Solorio, D A; Pavlov, S T
2001-01-01
The theory on the light transmission through the quantum well, placed in the strong magnetic field, perpendicular to the well plane, wherein the interzone transitions take place, is developed. The light wave length is assumed to be comparable with the well width. The formulae for reflection, absorption and transmission wherein the spatial dispersion of the monochromatic light wave and the difference in the reflection indices of the quantum well and the barrier are accounted for, are obtained. It is shown that accounting for these factors effects the reflection most of all, because along with the reflection, caused by the interzonal transitions in the quantum well there appears the additional reflection from the well boundaries. The most radical changes in the reflection take place in the case, when the reverse radiation lifetime of the excited state in the quantum well is shorter as compared to the reverse non-radiation lifetime
Spilling of electronic states in Pb quantum wells
Jałochowski, M.; Palotás, K.; Krawiec, M.
2016-01-01
Energy-dependent apparent step heights of two-dimensional ultrathin Pb islands grown on the Si(111)6 ×6 -Au surface have been investigated by a combination of scanning tunneling microscopy, first-principles density-functional theory, and the particle-in-a-box model calculations. The apparent step height shows the thickness- and energy-dependent oscillatory behaviors, which are directly related to the spilling of electron states into the vacuum exhibiting a quantum size effect. This has been unambiguously proven by extensive first-principles scanning tunneling microscopy and spectroscopy simulations. An electronic contribution to the apparent step height is directly determined. At certain energies it reaches values as high as a half of the atomic contribution. The applicability of the particle-in-a-box model to the spilling of electron states is also discussed.
Anisotropic emission and photon-recycling in strain-balanced quantum well solar cells
International Nuclear Information System (INIS)
Cabrera, C. I.; Enciso, A.; Contreras-Solorio, D. A.; Rimada, J. C.; Hernandez, L.; Connolly, J. P.
2014-01-01
Strain-balanced quantum well solar cells (SB-QWSCs) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. Anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. The addition of a distributed Bragg reflector can substantially increase the photocurrent while decreasing the radiative recombination current. We have examined the impact of the photon recycling effect on SB-QWSC performance. We have optimized SB-QWSC design to achieve single junction efficiencies above 30%
Anisotropic emission and photon-recycling in strain-balanced quantum well solar cells
Energy Technology Data Exchange (ETDEWEB)
Cabrera, C. I.; Enciso, A.; Contreras-Solorio, D. A. [Academic Unit of Physics, Autonomous University of Zacatecas, Czda. Solidaridad y Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico); Rimada, J. C. [Solar Cell Laboratory, Institute of Materials Science and Technology (IMRE), University of Havana, Zapata y G, 10400 La Habana (Cuba); Hernandez, L., E-mail: luisman@fisica.uh.cu [Faculty of Physics, University of Havana, Colina Universitaria. 10400 La Habana (Cuba); Connolly, J. P. [Nanophotonics Technology Center, Universidad Politécnica de Valencia, 46022 Valencia (Spain)
2014-04-28
Strain-balanced quantum well solar cells (SB-QWSCs) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. Anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. The addition of a distributed Bragg reflector can substantially increase the photocurrent while decreasing the radiative recombination current. We have examined the impact of the photon recycling effect on SB-QWSC performance. We have optimized SB-QWSC design to achieve single junction efficiencies above 30%.
Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes
Energy Technology Data Exchange (ETDEWEB)
Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng; Penn, Samson; Zhao, Hongping; Liu, Guangyu; Li, Xiaohang; Poplawsky, Jonathan
2011-07-14
The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.
Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure
Energy Technology Data Exchange (ETDEWEB)
Absalan, H; SalmanOgli, A; Rostami, R
2013-07-31
The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)
Simulation of a broadband nano-biosensor based on an onion-like quantum dot–quantum well structure
International Nuclear Information System (INIS)
Absalan, H; SalmanOgli, A; Rostami, R
2013-01-01
The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot–quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 – 760 nm). (laser applications in biology and medicine)
Intersubband scattering in n -GaAs/AlGaAs wide quantum wells
Drichko, I. L.; Smirnov, I. Yu.; Nestoklon, M. O.; Suslov, A. V.; Kamburov, D.; Baldwin, K. W.; Pfeiffer, L. N.; West, K. W.; Golub, L. E.
2018-02-01
Slow magneto-oscilations of the conductivity are observed in a 75-nm-wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magneto-oscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between these subbands as well as the intersubband scattering rate are determined.
A new switching characteristics of highly doped multi-quantum well
Song, C K
1999-01-01
A new type of hysteretic current-voltage characteristics, which switched from a low conductance off-state into a high conductance on-state at a threshold voltage and the high conductance state was sustained even when the bias voltage reduced below the threshold voltage, was experimentally observed for the highly doped multi-quantum well structure. The characteristics were attributed to confinement of electrons and impact ionization of the confined electrons out of the quantum wells. The test devices employing 10 periods of quantum wells were fabricated by using AlGaAs/GaAs semiconductor heterostructure and I-V characteristics were examined.
Binding energy of impurity states in an inverse parabolic quantum well under magnetic field
International Nuclear Information System (INIS)
Kasapoglu, E.; Sari, H.; Soekmen, I.
2007-01-01
We have investigated the effects of the magnetic field which is directed perpendicular to the well on the binding energy of the hydrogenic impurities in an inverse parabolic quantum well (IPQW) with different widths as well as different Al concentrations at the well center. The Al concentration at the barriers was always x max =0.3. The calculations were performed within the effective mass approximation, using a variational method. We observe that IPQW structure turns into parabolic quantum well with the inversion effect of the magnetic field and donor impurity binding energy in IPQW strongly depends on the magnetic field, Al concentration at the well center and well dimensions
DEFF Research Database (Denmark)
Lyssenko, V. G.; Østergaard, John Erland; Hvam, Jørn Märcher
1999-01-01
Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we...... investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 Å....
Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires
Tito, M. A.; Tavares, B. G. M.; Arakaki, H.; de Souza, C. A.; Pusep, Yu A.
2016-12-01
Optical emission of the heterostructured GaAs/AlGaAs core/shell nanowires with a multiple quantum well structure of the shell was found dominant by spatially indirect recombination of the electrons in the NW core with the photoexcited holes confined in the QWs of the shell. Multiple photoluminescence peak structure corresponding to the contributions of the individual quantum wells was observed. Numerical calculations of the confined hole eigenstate energies allowed for determination of the characteristic parameters of the studied nanowires, such as the surface depletion potential, intrinsic electron concentration and the actual widths of the quantum wells and the barriers formed in the nanowire shell. The presented data suggest formation of highly uniform cylinder symmetry two-dimensional quantum wells embedded in the nanowire shell.
Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells
International Nuclear Information System (INIS)
O'Neill, J.P.; Ross, I.M.; Cullis, A.G.; Wang, T.; Parbrook, P.J.
2003-01-01
We report a study of the morphology and composition of In x Ga 1-x N/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have employed high-resolution transmission electron microscopy, energy dispersive x-ray analysis, and scanning transmission electron microscopy. Microstructural analysis was performed to investigate the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼100 pA/cm 2 , was found to induce significant nanoclustering of indium within the multiple-quantum wells. These findings highlight the need for caution when reporting the presence of indium-rich clusters within InGaN/GaN multiple-quantum wells studied in the transmission electron microscope
National Aeronautics and Space Administration — We propose to develop a SPECTRALLY-TUNABLE INFRARED CAMERA based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. This will build on...
National Aeronautics and Space Administration — We propose to develop a compact handheld longwave infrared camera based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. Based on...
National Research Council Canada - National Science Library
Huang, Danhong
2001-01-01
.... In this article, they extend their theory to include the photoemission current and to reproduce their recent finding on the dynamical drop of photoresponsivity from its static value in quantum-well...
Optical transitions and gain in group-III nitride quantum wells
Litvinov, V. I.
2000-11-01
The convenient basis representation for the valence band Hamiltonian in wurtzite semiconductors is proposed and the polarization selection rules in GaN-based quantum wells are found. The polarization dependent optical matrix elements in quantum wells are calculated for a finite in-plane electron momentum, that allows to calculate peak optical gain and laser threshold in the GaN-based quantum well structures. This article also addresses the role of alloy inhomogeneities in the optical gain in quantum well lasers. The peak gain is found as a function of statistical broadening caused by the In-content fluctuations. It is shown that the composition fluctuations in the active region influence the gain differently depending on a light polarization. The absolute value of the calculated gain is found to be in agreement with the experiment.
Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1
DEFF Research Database (Denmark)
Bischoff, Svend; Brorson, S.D.; Franck, T.
1996-01-01
A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...
International Workshop on "Intersubband Transitions in Quantum Wells : Physics and Applications"
Su, Yan-Kuin
1998-01-01
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well i...
Ultrafast spectral interferometry of resonant secondary emmission from semiconductor quantum wells
DEFF Research Database (Denmark)
Birkedal, Dan; Shah, Jagdeep
1999-01-01
Recent investigations of secondary emission from quantum well excitons follwing resonant excitation have demonstrated an intricate interplay of coherent Rayleigh scattering and incoherent luminescence. We have very recently demonstrated that it is possible to isolate and time resolve the coherent...
Stretchable Persistent Spin Helices in GaAs Quantum Wells
Dettwiler, Florian; Fu, Jiyong; Mack, Shawn; Weigele, Pirmin J.; Egues, J. Carlos; Awschalom, David D.; Zumbühl, Dominik M.
2017-07-01
the extracted spin-diffusion lengths and decay times show a significant enhancement near α =β . Since within the continuous-locking regime quantum transport is diffusive (2D) for charge while ballistic (1D) for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication ˜8 - 25 μ m between solid-state spin qubits, where the spin diffusion length for α ≠β is an order of magnitude smaller.
Stretchable Persistent Spin Helices in GaAs Quantum Wells
Directory of Open Access Journals (Sweden)
Florian Dettwiler
2017-07-01
sufficiently weak so that the extracted spin-diffusion lengths and decay times show a significant enhancement near α=β. Since within the continuous-locking regime quantum transport is diffusive (2D for charge while ballistic (1D for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication ∼8–25 μm between solid-state spin qubits, where the spin diffusion length for α≠β is an order of magnitude smaller.
Collective Behavior of a Spin-Aligned Gas of Interwell Excitons in Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Bayer, M.; Hvam, Jørn Märcher
2005-01-01
The kinetics of a spin-aligned gas of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructure) is studied. The temperature dependence of the spin relaxation time for excitons, in which a photoexcited electron and hole are spatially separated between two adjacent quantum well...... is associated with indirect evidence of the coherence of the collective phase of interwell excitons at temperatures below the critical value....
Dielectric coating and surface plasmon enhancement of multi-color quantum-well structures
DEFF Research Database (Denmark)
Fadil, Ahmed; Iida, Daisuke; Ou, Yiyu
We fabricate a multi-colored quantum-well structure as a prototype towards monolithic white light-emitting diodes, and modify the emission intensities of different colors by introducing dielectric and Ag nanoparticle coating.......We fabricate a multi-colored quantum-well structure as a prototype towards monolithic white light-emitting diodes, and modify the emission intensities of different colors by introducing dielectric and Ag nanoparticle coating....
Intersubband light absorption by holes in InAsSb/AlSb quantum well heterostructures
International Nuclear Information System (INIS)
Pavlov, N V; Zegrya, G G
2016-01-01
The absorption coefficients of intersubband optical transitions in the valence band of the AlSb/InAs_0_._8_4Sb_0_._1_6/AlSb quantum wells in framework of the four-band Kane model. It is established that the light absorption by holes may lead to the laser generation breakdown. It is shown that we need to decrease the quantum well width to range a<6 nm to neutralize the negative influence of this effect. (paper)
Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.
2015-09-01
AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3-5 μm) is achieved in such nitride semiconductors.
Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels
Wees, B.J. van; Meijer, G.I.; Kuipers, J.J.; Klapwijk, T.M.; Graaf, W. van de; Borghs, G.
1995-01-01
We investigated magnetotransport in the two-dimensional electron gas (2DEG) present in InAs/AlSb quantum wells. The filling factor Ng underneath a gate electrode was reduced relative to the bulk filling factor Nb. For Ng
Quantum size effects and transport phenomena in PbSe quantum wells and PbSe/EuS superlattices
Energy Technology Data Exchange (ETDEWEB)
Rogacheva, E. I.; Nashchekina, O. N.; Ol' khovskaya, S. I.; Sipatov, A. Yu. [National technical university Kharkov polytechnic institute, 21 Frunze St., Kharkov, 61002 (Ukraine); Dresselhaus, M. S. [Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge MA 02139 (United States)
2013-12-04
It is established that the room-temperature dependences of transport properties on the total thickness of PbSe layers d in PbSe/EuS superlattices exhibit an oscillatory behavior. It is shown that the oscillation period Δd practically coincides with the period of the thickness oscillations observed earlier in single PbSe/EuS quantum well. The non-monotonic character of these dependences is attributed to quantum size effects. The theoretically estimated and experimentally determined Δd values are in good agreement.
Bian, Song-Bao; Tang, Yan; Li, Gui-Rong; Li, Yue-Xia; Yang, Fu-Hua; Zheng, Hou-Zhi; Zeng, Yi-Ping
2003-08-01
We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)-quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of 100 ms has been obtained at a temperature of 10 K while the switching speed reaches the order of ten megahertz.
Energy Technology Data Exchange (ETDEWEB)
Liu, W. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Jiang, D.S.; Chen, P.; Liu, Z.S.; Zhu, J.J.; Shi, M.; Zhao, D.M.; Li, X. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, J.P.; Zhang, S.M.; Wang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Yang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)
2015-03-15
Highlights: • A macroscopic method is used to investigate the microscopic localization effect. • Two origins of localization states in InGaN quantum wells are distinguished. • The composition-related deep localization states dominate luminescence in thin wells. • The shallow localization states dominate luminescence in thick wells. - Abstract: Green light emitting InGaN/GaN multiple-quantum-well (MQW) structures with varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD). The localization effect in these samples is studied by means of temperature-dependent photoluminescence (PL) measurements. The S-shape shift of PL peak energy with increasing temperature is observed, from which the extent of localization effect is determined quantitatively by using a band-tail model. It is found that the composition-related deep localization states dominate the light emission in thin-well MQWs, while in thick-well MQWs the shallow localization states induced by the fluctuations of InGaN well thickness dominate the luminescence efficiency. It is considered that in the thinner wells the improved emitting efficiency may partially originate from the stronger localization effect.
International Nuclear Information System (INIS)
Liu, W.; Zhao, D.G.; Jiang, D.S.; Chen, P.; Liu, Z.S.; Zhu, J.J.; Shi, M.; Zhao, D.M.; Li, X.; Liu, J.P.; Zhang, S.M.; Wang, H.; Yang, H.
2015-01-01
Highlights: • A macroscopic method is used to investigate the microscopic localization effect. • Two origins of localization states in InGaN quantum wells are distinguished. • The composition-related deep localization states dominate luminescence in thin wells. • The shallow localization states dominate luminescence in thick wells. - Abstract: Green light emitting InGaN/GaN multiple-quantum-well (MQW) structures with varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD). The localization effect in these samples is studied by means of temperature-dependent photoluminescence (PL) measurements. The S-shape shift of PL peak energy with increasing temperature is observed, from which the extent of localization effect is determined quantitatively by using a band-tail model. It is found that the composition-related deep localization states dominate the light emission in thin-well MQWs, while in thick-well MQWs the shallow localization states induced by the fluctuations of InGaN well thickness dominate the luminescence efficiency. It is considered that in the thinner wells the improved emitting efficiency may partially originate from the stronger localization effect
A Comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells
International Nuclear Information System (INIS)
Park, Il-Kyu; Kwon, Min-Ki; Park, Seong-Ju
2012-01-01
A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent photoluminescence (PL) results showed that the internal quantum efficiency of InGaN QDs at room temperature was 8.7 times larger than that found for InGaN QWs because they provided dislocation-free recombination sites for the electrical charge carriers. The excitation power-dependent PL and electroluminescence results showed that the effect of the polarization induced electric field on the recombination process of electrical charge carriers in the QDs was negligibly small whereas it was dominant in the QWs. These results indicate that InGaN QDs are more beneficial than QWs in improving the luminescence efficiency of LEDs in the green spectral range.
Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.
2016-09-01
The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.
Efficiency dip observed with InGaN-based multiple quantum well solar cells
Lai, Kunyu
2014-01-01
The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
Quantum information entropies for a squared tangent potential well
Energy Technology Data Exchange (ETDEWEB)
Dong, Shishan [Information and Engineering College, DaLian University, 116622 (China); Sun, Guo-Hua, E-mail: sunghdb@yahoo.com [Centro Universitario Valle de Chalco, Universidad Autónoma del Estado de México, Valle de Chalco Solidaridad, Estado de México, 56615 (Mexico); Dong, Shi-Hai, E-mail: dongsh2@yahoo.com [Departamento de Física, Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Unidad Profesional Adolfo López Mateos, Edificio 9, México D.F. 07738 (Mexico); Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001 (United States); Draayer, J.P., E-mail: draayer@sura.org [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001 (United States)
2014-01-10
The particle in a symmetrical squared tangent potential well is studied by examining its Shannon information entropy and standard deviations. The position and momentum information entropy densities ρ{sub s}(x), ρ{sub s}(p) and probability densities ρ(x), ρ(p) are illustrated with different potential range L and potential depth U. We present analytical position information entropies S{sub x} for the lowest two states. We observe that the sum of position and momentum entropies S{sub x} and S{sub p} expressed by Bialynicki-Birula–Mycielski (BBM) inequality is satisfied. Some eigenstates exhibit entropy squeezing in the position. The entropy squeezing in position will be compensated by an increase in momentum entropy. We also note that the S{sub x} increases with the potential range L, while decreases with the potential depth U. The variation of S{sub p} is contrary to that of S{sub x}.
6.2-GHz modulated terahertz light detection using fast terahertz quantum well photodetectors.
Li, Hua; Wan, Wen-Jian; Tan, Zhi-Yong; Fu, Zhang-Long; Wang, Hai-Xia; Zhou, Tao; Li, Zi-Ping; Wang, Chang; Guo, Xu-Guang; Cao, Jun-Cheng
2017-06-14
The fast detection of terahertz radiation is of great importance for various applications such as fast imaging, high speed communications, and spectroscopy. Most commercial products capable of sensitively responding the terahertz radiation are thermal detectors, i.e., pyroelectric sensors and bolometers. This class of terahertz detectors is normally characterized by low modulation frequency (dozens or hundreds of Hz). Here we demonstrate the first fast semiconductor-based terahertz quantum well photodetectors by carefully designing the device structure and microwave transmission line for high frequency signal extraction. Modulation response bandwidth of gigahertz level is obtained. As an example, the 6.2-GHz modulated terahertz light emitted from a Fabry-Pérot terahertz quantum cascade laser is successfully detected using the fast terahertz quantum well photodetector. In addition to the fast terahertz detection, the technique presented in this work can also be used for optically characterizing the frequency stability of terahertz quantum cascade lasers, heterodyne detections and photomixing applications.
Spinor-electron wave guided modes in coupled quantum wells structures by solving the Dirac equation
Energy Technology Data Exchange (ETDEWEB)
Linares, Jesus [Area de Optica, Departamento de Fisica Aplicada, Facultade de Fisica, Escola Universitaria de Optica e Optometria, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Galicia (Spain)], E-mail: suso.linares.beiras@usc.es; Nistal, Maria C. [Area de Optica, Departamento de Fisica Aplicada, Facultade de Fisica, Escola Universitaria de Optica e Optometria, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Galicia (Spain)
2009-05-04
A quantum analysis based on the Dirac equation of the propagation of spinor-electron waves in coupled quantum wells, or equivalently coupled electron waveguides, is presented. The complete optical wave equations for Spin-Up (SU) and Spin-Down (SD) spinor-electron waves in these electron guides couplers are derived from the Dirac equation. The relativistic amplitudes and dispersion equations of the spinor-electron wave-guided modes in a planar quantum coupler formed by two coupled quantum wells, or equivalently by two coupled slab electron waveguides, are exactly derived. The main outcomes related to the spinor modal structure, such as the breaking of the non-relativistic degenerate spin states, the appearance of phase shifts associated with the spin polarization and so on, are shown.
Visualizing the solutions for the circular infinite well in quantum and classical mechanics
International Nuclear Information System (INIS)
Robinett, R.W.
1996-01-01
The classical and quantum mechanical problem of a particle in the infinite circular well has recently surfaced in two quite different manifestations: (i) the observation of open-quote open-quote electron standing waves close-quote close-quote in circular open-quote open-quote corrals close-quote close-quote of atoms adsorbed on surfaces and (ii) as a benchmark example of an integrable system for comparison to the classical and quantum chaotic behavior of the open-quote open-quote stadium billiards close-quote close-quote problem. Motivated by this, we review the quantum and classical probability distributions for both position and momentum for this familiar problem, focusing on the visualization of the quantum wave functions and classical trajectories as well as the semiclassical connections between the two. copyright 1996 American Association of Physics Teachers
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
Wittmann, B.; Danilov, S. N.; Bel' kov, V. V.; Tarasenko, S. A.; Novik, E. G.; Buhmann, H.; Brune, C.; Molenkamp, L. W.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Vinh, N. Q.; van der Meer, A. F. G.; Murdin, B.; Ganichev, S. D.
2010-01-01
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to
Direct measurement of doping density and barrier lowering effect with bias in quantum wells
Xu, Y.; Shakouri, A.; Yariv, A.; Krabach, T.; Dejewski, S.
1995-01-01
An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AlGaAs multiquantum-well infra-red photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally.
Jeong, Hwajun; Shin, Seung Koo
2018-01-01
Colloidal quantum dots exhibit size-dependent optical properties due to quantum and dielectric confinements at the semiconductor/solvent boundary. To consider both confinement effects, we take a natural potential well approach that assumes separate potential wells for electron and hole which are surrounded by dielectric media. The potential well depths for electron and hole are set by the band offsets at the semiconductor/solvent heterojunction. The kinetic energy is calculated using an effective mass approximation and the electron-hole interaction energy is obtained by taking image charges into account. For cadmium chalcogenides, resulting transition energies agree well with size-dependent optical bandgaps from experiments.
Electronic states of semiconductor-metal-semiconductor quantum-well structures
Huberman, M. L.; Maserjian, J.
1988-01-01
Quantum-size effects are calculated in thin layered semiconductor-metal-semiconductor structures using an ideal free-electron model for the metal layer. The results suggest new quantum-well structures having device applications. Structures with sufficiently high-quality interfaces should exhibit effects such as negative differential resistance due to tunneling between allowed states. Similarly, optical detection by intersubband absorption may be possible. Ultrathin metal layers are predicted to behave as high-density dopant sheets.
Transport phenomena in quantum wells and wires in presence of disorder and interactions
Vettchinkina, Valeria
2012-01-01
Present-day electronics employ circuits of smaller and smaller dimensions, and today the length scales are so small that the laws of physics which rule micro-cosmos, quantum mechanics, become directly important. This thesis reports on theoretical work on electron transport in different nanostructures. We have studied semiconductor quantum wells, layered materials where each layer can be only a few atomic layers thick, and transport in thin atomic wires. The layered materials have been stud...
Controlled release of stored pulses in a double-quantum-well structure
International Nuclear Information System (INIS)
Carreno, F; Anton, M A
2009-01-01
We show that an asymmetric double-quantum-well structure can operate as an optical memory. The double quantum wells are modelled like an atomic ensemble of four-level atoms in the Λ-V-type configuration with vacuum-induced coherence arising from resonant tunnelling through the ultra-thin potential energy barrier between the wells. A weak quantum field connects the ground level with the two upper levels and an auxiliary classical control field connects the intermediate level with the upper levels. The quantum field can be mapped into two channels. One channel results from the adiabatic change of the control field which maps the incoming quantum field into the coherence of the two lower levels like in a Λ-type atomic ensemble. The other channel results from the mapping of the quantum field into a combination of coherences between the two upper levels and the ground level, and it is allowed by the adiabatic change of the upper level splitting via an external voltage. The possibility of releasing multiple pulses from the medium resulting from the existence of a non-evolving component of the two-channel memory is shown. A physical picture has been developed providing an explanation of the performance of the device.
The Over-Barrier Resonant States and Multi-Channel Scattering in Multiple Quantum Wells
Directory of Open Access Journals (Sweden)
A Polupanov
2016-09-01
Full Text Available We demonstrate an explicit numerical method for accurate calculation of the scattering matrix and its poles, and apply this method to describe the multi-channel scattering in the multiple quantum-wells structures. The S-matrix is continued analytically to the unphysical region of complex energy values. Results of calculations show that there exist one or more S-matrix poles, corresponding to the over-barrier resonant states critical for the effect of the absolute reflection of holes in the energy range where only the heavy ones may propagate over barriers in a structure. Light- and heavy-hole states are described by the Luttinger Hamiltonian matrix. In contrast to the single quantum-well case, at some parameters of a multiple quantum-wells structure the number of S-matrix poles may exceed that of the absolute reflection peaks, and at different values of parameters the absolute reflection peak corresponds to different resonant states. The imaginary parts of the S-matrix poles and hence the lifetimes of resonant states as well as the widths of resonant peaks of absolute reflection depend drastically on the quantum-well potential depth. In the case of shallow quantum wells there is in fact a long-living over-barrier resonant hole state.
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells
Ganichev, S. D.
gas a charge current, the anomalous Hall effect, can be observed. As both magnetic fields and gyrotropic mechanisms were used authors introduced the notation "magneto-gyrotropic photogalvanic effects" for this class of phenomena. The effect is observed in GaAs and InAs low dimensional structures at free-carrier absorption of terahertz radiation in a wide range of temperatures from liquid helium temperature up to room temperature. The results are well described by the phenomenological description based on the symmetry. Experimental and theoretical analysis evidences unumbiguously that the observed photocurrents are spin-dependent. Microscopic theory of this effect based on asymmetry of photoexcitation and relaxation processes are developed being in a good agreement with experimental data. Note from Publisher: This article contains the abstract only.
Energy Technology Data Exchange (ETDEWEB)
Yang, Jing; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 (China); Wang, Hui; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Jahn, Uwe [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany)
2014-09-01
Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar cell structures are investigated, revealing the relationship between optical and structural properties of the MQW structures with a large number of quantum wells. In the bottom MQW layers, a blueshift of CL peak along the growth direction is found and attributed to the decrease of indium content due to the compositional pulling effect. An obvious split of emission peak and a redshift of the main emission energy are found in the top MQW layers when the MQW grows above the critical layer thickness. They are attributed to the segregation of In-rich InGaN clusters rather than the increase of indium content in quantum well layer. The MQW structure is identified to consist of two regions: a strained one in the bottom, where the indium content is gradually decreased, and a partly relaxed one in the top with segregated In-rich InGaN clusters.
Energy Technology Data Exchange (ETDEWEB)
Lin, Tao; Zhang, Haoqing; Guo, Enmin; Sun, Ruijuan [Department of Electronic Engineering, Xi' an University of Technology, Xi' an 710048 (China); Duan, Yupeng [Department of Physics, Northwest University, Xi' an 710069 (China); Lin, Nan; Ma, Xiaoyu [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
2015-11-25
N ions implantation induced quantum well intermixing in GaInP/AlGaInP triple quantum-well laser structures was firstly reported in this work. N ions were implanted with the energy of 40 keV and dose of 1e17 ions/cm{sup 2}, and thereafter rapid thermal annealing process were performed at 750 °C from 40 s to 200 s to induce the intermixing. The photoluminescence wavelength blue-shifts were found increased with the increasing time and the largest blue-shift of 54.9 nm was obtained for 200 s annealing. Surface morphology results shows that the photoluminescence improvement in the annealing samples came from the restoration effect of the layer crystal and hetero-structure interfaces. X-ray photoelectron spectroscopy tests shows that the implanting N ions tend to form Ga–N bonding besides generating point defect to induce quantum well intermixing. - Highlights: • IIID induced QWI was firstly investigated in GaInP/AlGaInP 650 nm LD using N ion implantation. • Largest blue-shift of 54.9 nm was obtained with higher intensity and narrower FWHM. • The layer crystal and hetero-structure interfaces optimization improves the PL. • XPS results show that implanting N ions tend to form Ga–N besides inducing QWI.
Hot electron and real space transfer in double-quantum-well structures
International Nuclear Information System (INIS)
Okuno, Eiichi; Sawaki, Nobuhiko; Akasaki, Isamu; Kano, Hiroyuki; Hashimoto, Masafumi.
1991-01-01
The hot electron phenomena and real space transfer (RST) effect are studied in GaAs/AlGaAs double-quantum-well (DQW) structures, in which we have two kind of quantum wells with different widths. The drift velocity and the electron temperature at liquid helium temperature are investigated as a function of the external electric field applied parallel to the heterointerface. By increasing the field, the electron temperature rises and reaches a plateau in the intermediate region, followed by further rise in the high-field region. The appearance of the plateau is attributed to the RST effect between the two quantum wells. The threshold field for the appearance of the plateau is determined by the difference energy between the quantized levels in two wells. The energy loss rate as a function of the electron temperature indicates that the RST is assisted by LO phonon scattering. (author)
Asymmetric double quantum well structure as a tunable detector in the far-infrared range
Shin, U; Park, M J; Lee, S J
1999-01-01
The eigenvalues and the wave functions of GaAs/Al sub x Ga sub 1 sub - sub x As asymmetric double quantum well structure have been calculated by using of complex energy method. Based on theoretical calculations, tuning ranges from 9 to 14 mu m are predicted for the proposed asymmetric coupled-quantum-well structure. In addition we calculated the energy eigenvalues and the wave functions of an electron in GaAs/Al sub x Ga sub 1 sub - sub x As single quantum well structure (including delta-perturbation). the variation in E sub 1 , the ground state energy eigenvalue of the electron, depends on the strength and position of the perturbation within the well.
Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well
International Nuclear Information System (INIS)
Zheng Wei-Min; Cong Wei-Yan; Wang Ai-Fang; Li Su-Mei; Li Bin; Huang Hai-Bei
2016-01-01
A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and three-dimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results. (paper)
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells
Tito, M. A.; Pusep, Yu. A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
2016-03-01
The electron transport and recombination processes of photoexcited electron-hole pairs were studied in InGaAs/InP single quantum wells. Comprehensive transport data analysis reveals a asymmetric shape of the quantum well potential where the electron mobility was found to be dominated by interface-roughness scattering. The low-temperature time-resolved photoluminescence was employed to investigate recombination kinetics of photogenerated electrons. Remarkable modification of Auger recombination was observed with variation of the electron mobility. In high mobility quantum wells, the increasing pump power resulted in a new and unexpected phenomenon: a considerably enhanced Auger non-radiative recombination time. We propose that the distribution of the photoexcited electrons over different conduction band valleys might account for this effect. In low mobility quantum wells, disorder-induced relaxation of the momentum conservation rule causes inter-valley transitions to be insignificant; as a consequence, the non-radiative recombination time is reduced with the increase in pump power. Thus, interface-roughness scattering was found responsible for both transport properties and dynamic optical response in InGaAs/InP quantum wells.
THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE
Directory of Open Access Journals (Sweden)
Mustafa TEMİZ
1996-02-01
Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.
Directory of Open Access Journals (Sweden)
Mustafa Kemal BAHAR
2010-06-01
Full Text Available In this study, the effects of applied electric field on the isolated square quantum well was investigated by analytic and perturbative method. The energy eigen values and wave functions in quantum well were found by perturbative method. Later, the electric field effects were investigated by analytic method, the results of perturbative and analytic method were compared. As well as both of results fit with each other, it was observed that externally applied electric field changed importantly electronic properties of the system.
Efficiency studies on semipolar GaInN-GaN quantum well structures
Energy Technology Data Exchange (ETDEWEB)
Scholz, Ferdinand; Meisch, Tobias; Elkhouly, Karim [Institute of Optoelectronics, Ulm University (Germany)
2016-12-15
In order to clarify the reasons for the fairly poor electroluminescence (EL) performance of semipolar LED structures grown on patterned sapphire wafers, we have analyzed both, pure photoluminescence (PL) test structures without doping only containing 5 GaInN quantum wells and full EL test structures, all emitting at a wavelength of about 510 nm. Evaluating the PL intensity over a wide range of temperatures and excitation powers, we conclude that such quantum wells possess a fairly large internal quantum efficiency of about 20%. However, on EL test structures containing nominally the same quantum wells, we obtained an optical output power of only about 150μW at an applied current of 20 mA. This may be due partly to some thermal destruction of the quantum wells by the overgrowth with p-GaN. Even more important seems to be the not yet finally optimized p-doping of these structures. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Green light emission by InGaN/GaN multiple-quantum-well microdisks
International Nuclear Information System (INIS)
Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C.; Hsu, Gary Z. L.
2014-01-01
The high-quality In x Ga 1−x N/GaN multiple quantum wells were grown on GaN microdisks with γ-LiAlO 2 substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In x Ga 1−x N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192 eV) emitted from the In x Ga 1−x N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383 eV) from GaN
Gallium arsenide quantum well-based far infrared array radiometric imager
Forrest, Kathrine A.; Jhabvala, Murzy D.
1991-01-01
We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.
Study of GeSn Alloy for Low Cost Monolithic Mid Infrared Quantum Well Sensor
Directory of Open Access Journals (Sweden)
Prakash PAREEK
2017-02-01
Full Text Available This paper focuses on theoretical study of Tin incorporated group IV alloys particularly GeSn and design of quantum well sensor for mid infrared sensing applications. Initially, the physics behind the selection of material for midinfrared sensor is explained. The importance of controlling strain in GeSn alloy is also explained. The physical background and motivation for incorporation of Tin(Sn in Germanium is briefly narrated. Eigen energy states for different Sn concentrations are obtained for strain compensated quantum well in G valley conduction band (GCB, heavy hole (HH band and light hole (LH band by solving coupled Schrödinger and Poisson equations simultaneously. Sn concentration dependent absorption spectra for HH- GCB transition reveals that significant absorption observed in mid infrared range (3-5 µm. So, Ge1-x Snx quantum well can be used for mid infrared sensing applications.
Intrinsic normal Zeeman effect for spin plasmons in semiconductor quantum wells
Ullrich, C. A.; D'Amico, I.; Baboux, F.; Perez, F.
2013-09-01
The normal Zeeman effect gives rise to a three-fold splitting of atomic spectral lines in the presence of strong external magnetic fields. In n-doped semiconductor quantum wells, a similar three-fold splitting occurs in the intersubband spin plasmon resonance, as was recently demonstrated experimentally using inelastic light scattering. The plasmon splitting is caused by the interplay of intrinsic spin-orbit crystal magnetic fields and dynamical many-body effects. We show that it can be regarded as an intrinsic normal Zeeman effect in quantum wells. We present a formal framework for calculating the quantum well electronic states and their collective linear response in the presence of Rashba and Dresselhaus spin-orbit coupling, and we show how the intrinsic normal Zeeman effect of the spin plasmons can be controlled by external magnetic fields.
Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
Energy Technology Data Exchange (ETDEWEB)
Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)
2009-12-15
This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.
Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
International Nuclear Information System (INIS)
Wagener, Viera; Olivier, E.J.; Botha, J.R.
2009-01-01
This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.
InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation
International Nuclear Information System (INIS)
Zucker, J.E.; Jones, K.L.; Tell, B.; Brown-Goebeler, K.; Joyner, C.H.; Miller, B.I.; Young, M.G.
1992-01-01
Formation of buried InGaAsP/InP quantum well wave-guides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved. (author)
Nonlinear terahertz response of HgTe/CdTe quantum wells
Energy Technology Data Exchange (ETDEWEB)
Chen, Qinjun [School of Physics and Electronics, Hunan University, Changsha 410082 (China); School of Physics, University of Wollongong, Wollongong, New South Wales 2522 (Australia); Sanderson, Matthew; Zhang, Chao, E-mail: czhang@uow.edu.au [School of Physics, University of Wollongong, Wollongong, New South Wales 2522 (Australia)
2015-08-24
Without breaking the topological order, HgTe/CdTe quantum wells can have two types of bulk band structure: direct gap type (type I) and indirect gap type (type II). We report that the strong nonlinear optical responses exist in both types of bulk states under a moderate electric field in the terahertz regime. Interestingly, for the type II band structure, the third order conductivity changes sign when chemical potentials lies below 10 meV due to the significant response of the hole excitation close to the bottom of conduction band. Negative nonlinear conductivities suggest that HgTe/CdTe quantum wells can find application in the gain medium of a laser for terahertz radiation. The thermal influences on nonlinear optical responses of HgTe/CdTe quantum wells are also studied.
Electrical characteristics and hot carrier effects in quantum well solar cells
Nguyen, Dac-Trung; Lombez, Laurent; Gibelli, Francois; Paire, Myriam; Boyer-Richard, Soline; Durand, Olivier; Guillemoles, Jean-François
2017-02-01
We report on the opto-electrical characterization of quantum-well solar cells designed for generation of hot carriers. Short-circuit current is proportional to laser power in the entire range. Population density, temperature and quasi-Fermi level splitting of photo-generated confined carriers are investigated by fitting the full luminescence spectra using generalized Planck's law. The energy-dependent absorptivity is identified to obtain good fit accuracy and takes into account the absorption of excitons and free carriers in the quantum well. Furthermore, electrical injection and extraction across the barriers modify the temperature of the quantum well carrier population linearly, hinting at the role of barriers as semi-selective high-energy contact.
Whispering gallery mode lasing from InGaN/GaN quantum well microtube.
Li, Yufeng; Feng, Lungang; Su, Xilin; Li, Qiang; Yun, Feng; Yuan, Ge; Han, Jung
2017-07-24
In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 µm and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm 2 . Such emission shows predominant TM polarization parallel to the microtube axis.
Magneto-absorption in Narrow Gap InSb/AlInSb Parabolic Quantum Wells
Saha, D.; Sanders, G. D.; Stanton, C. J.; Kasturiarachchi, T.; Gempel, W.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B.
2010-03-01
Because of its narrow gap, InSb has considerable promise as a quantum well material because its small conduction-band mass gives it the highest room temperature electron mobility among the III-V materials. We present experiments and calculations for the magneto-absorption spectra in a strained, narrow gap InSb/AlInSb parabolic quantum well. Our calculations are based on the 8-band Pidgeon-Brown model generalized to include the effects of the parabolic confinement potential as well as pseudomorphic strain. Optical properties are calculated within the golden rule approximation and compared with experiments. The magneto-optical absorption spectrum is calculated for magnetic fields from 1 to 8 T for x-linear, e-active and h-active polarizations. Comparison to experiment allows one to accurately determine the quantum confined, spin-split conduction and valence band energies. Results show a sensitive dependence on the strain at the pseudomorphic interfaces.
Twin extra-high photoluminescence in resonant double-period quantum wells.
Chang, C H; Cheng, Y H; Hsueh, W J
2014-12-01
Twin extra high photoluminescence (PL) in resonant quasi-periodic double-period quantum wells (DPQWs) for higher-generation orders is demonstrated. In the DPQW, the number of maxima in the maximum values of the PL intensity is two, which is different from other quasi-periodic quantum wells (QWs) and traditional periodic QWs. The maximum PL intensity in a DPQW is also stronger than that in a periodic QW under the anti-Bragg condition and that in a Fibonacci QW. Although the peaks of the squared electric field for the twin PL are both located near the QWs, their field profiles are distinct.
Band hybridization effect in InAs/GaSb based quantum wells
International Nuclear Information System (INIS)
Wei, X.F.; Gong, Y.P.; Long, M.S.; Yang, C.H.; Liu, L.W.
2013-01-01
We develop a simple way to investigate the band hybridization effect in the present of the many-body interactions in an InAs/GaSb based quantum wells with different widths. The exchange self-energy and energy gap are obtained analytically at the long wave limit. An electron-like and a hole-like dispersion relations were obtained and a minigap about several meV is observed at the intercross of the electron and hole dispersion relations. Our theoretical results show that the widths of the quantum well have crucial role on the band hybridization in such a system.
Band hybridization effect in InAs/GaSb based quantum wells
Energy Technology Data Exchange (ETDEWEB)
Wei, X.F. [West AnHui University, LuAn 237012 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Gong, Y.P.; Long, M.S. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Yang, C.H., E-mail: chyang@nuist.edu.cn [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Liu, L.W., E-mail: lwliu2012@sinano.ac.cn [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)
2013-03-15
We develop a simple way to investigate the band hybridization effect in the present of the many-body interactions in an InAs/GaSb based quantum wells with different widths. The exchange self-energy and energy gap are obtained analytically at the long wave limit. An electron-like and a hole-like dispersion relations were obtained and a minigap about several meV is observed at the intercross of the electron and hole dispersion relations. Our theoretical results show that the widths of the quantum well have crucial role on the band hybridization in such a system.
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.
2008-07-01
Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.
Electrochemical profiling of heterostructures with multiple quantum wells InGaN/GaN
International Nuclear Information System (INIS)
Zubkov, Vasily; Kucherova, Olga; Frolov, Dmitry; Zubkova, Anna
2013-01-01
A method of electrochemical capacitance-voltage profiling is used to characterize InGaN/GaN heterostructures with multiple quantum wells. Implementation of pulsed electrochemical etching allowed getting good planarity of etched surface despite of the high density of dislocations in GaN. The quality of etching, optimization of its parameters and independent check of etched depth were controlled by AFM measurements. Concentration profiles of InGaN/GaN QWs structures were evaluated then from capacitance-voltage measurements revealing several quantum wells with a period of 17 nm. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Quantum well saturable absorber mirror with electrical control of modulation depth
DEFF Research Database (Denmark)
Liu, Xiaomin; Rafailov, E.U.; Livshits, D.
2010-01-01
A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V.......A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V....
Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells
International Nuclear Information System (INIS)
Rodriguez V, I.; Gaggero S, L.M.
2004-01-01
We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Maremyanin, K. V.; Bovkun, L. S.; Spirin, K. E.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Marcinkiewicz, M.; Ruffenach, S.; Consejo, C.; Teppe, F.; Knap, W. [Universite Montpellier, Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 (France); Semyagin, B. R.; Putyato, M. A.; Emelyanov, E. A.; Preobrazhenskii, V. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2017-01-15
The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.
Zener tunneling isospin Hall effect in HgTe quantum wells and graphene multilayers
Lasia, Martha; Prada, Elsa; Brey, Luis
2011-01-01
A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a p-n junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe quantum wells and graphene multilayers. We find that the tunneling transition probability depends asymmetrically on the parallel momentum of the carriers to the barrier. In HgTe quantum wells the asymmetry is the opposite for each spin, whereas for graphen...
International Nuclear Information System (INIS)
Kasapoglu, E.; Soekmen, I.
2007-01-01
We have investigated the effects of the magnetic field which is applied perpendicular to the growth direction of the well on the interband absorption and on the binding energy of the excitons in an GaAs/Ga 1-x Al x As inverse parabolic quantum well (IPQW) with different widths as well as different Al concentrations at the well center. The calculations were performed within the effective mass approximation, using a variational method. We observe that IPQW structure turns into parabolic quantum well with the inversion effect of the magnetic field and the effective band gap of the system can be modified by changing Al concentration at the well center, the strength of the magnetic field and well dimensions. This case directly influences the nature of electronic and optical properties in this structure
Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
Butkutė, Renata; Niaura, Gediminas; Pozingytė, Evelina; Čechavičius, Bronislovas; Selskis, Algirdas; Skapas, Martynas; Karpus, Vytautas; Krotkus, Arūnas
2017-06-01
Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layers have served as diffusion barriers for Bi atoms, and the size of the nanoclusters which nucleated after sample annealing was correlating with the thickness of the bismide layers. Energy-dispersive spectroscopy and Raman scattering measurements have evidenced that the nanoparticles predominantly constituted from Bi atoms. Strong photoluminescence signal with photon wavelengths ranging from 1.3 to 1.7 μm was observed after annealing; its amplitude was scaling-up with the increased number of the GaAsBi layers. The observed photoluminescence band can be due to emission from Bi nanocrystals. The carried out theoretical estimates support the assumption. They show that due to the quantum size effect, the Bi nanoparticles experience a transition to the direct-bandgap semiconducting state.
Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells
Energy Technology Data Exchange (ETDEWEB)
Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)
2014-04-28
Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4 μm, which shows potential applications on near infrared detection.
Smell sensing and visualizing based on multi-quantum wells spatial light modulator
Tian, Fengchun; Zhao, Zhenzhen; Jia, Pengfei; Liao, Hailin; Chen, Danyu; Liu, Shouqiong
2014-09-01
For the existing drawbacks of traditional detecting methods which use gratings or prisms to detect light intensity distribution at each wavelength of polychromatic light, a novel method based on multi-quantum wells spatial light modulator (MQWs-SLM) has been proposed in this paper. In the proposed method, MQWs-SLM serves as a distribution features detector of the signal light. It is on the basis of quantum-confine Stark effect (QCSE) that the vertical applied voltage can change the absorption features of exciton in multi-quantum wells, and further change the distribution features of the readout polychromatic light of MQWs-SLM. It can be not only an universal detecting method, but also especially recommended to use in the Electronic nose system for features detecting of signal light so as to realize smell sensing and visualizing. The feasibility of the proposed method has been confirmed by mathematical modeling and analysis, simulation experiments and research status analysis.
Spin-related transport phenomena in HgTe-based quantum well structures
Energy Technology Data Exchange (ETDEWEB)
Koenig, Markus
2007-12-15
Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg{sub 0.3}Cd{sub 0.7}Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)
Faraday rotation in multiple quantum wells of GaAs/AlGaAs
International Nuclear Information System (INIS)
Dudziak, E.; Bozym, J.; Prochnik, D.; Wasilewski, Z.R.
1996-01-01
We report on the results of first measurements on the Faraday rotation of modulated n-doped multiple quantum wells of GaAs/Al x Ga 1-x As (x = 0.312). The measurements have been performed in the magnetic fields up to 13 T at the temperature of 2 K, in the spectral region of interband transitions. A rich structure of magneto-excitons has been found in the measured spectra. Faraday rotation (phase) measurements are proposed as an alternative method to the photoluminescence excitation for investigations of magneto-excitons in quantum wells. The dependence of measured Faraday rotation on magnetic field and hypothetical connections with quantum Hall effect are also discussed. (author)
Auger-Limited Carrier Recombination and Relaxation in CdSe Colloidal Quantum Wells
Energy Technology Data Exchange (ETDEWEB)
Baghani, Erfan; O’Leary, Stephen K.; Fedin, Igor; Talapin, Dmitri V.; Pelton, Matthew
2015-03-19
Using time-resolved photoluminescence spectroscopy, we show that two-exciton Auger recombination dominates carrier recombination and cooling dynamics in CdSe nanoplatelets, or colloidal quantum wells. The electron-hole recombination rate depends only on the number of electron-hole pairs present in each nanoplatelet, and is consistent with a twoexciton recombination process over a wide range of exciton densities. The carrier relaxation rate within the conduction and valence bands also depends only on the number of electron-hole pairs present, apart from an initial rapid decay, and is consistent with the cooling rate being limited by reheating due to Auger recombination processes. These Auger-limited recombination and relaxation dynamics are qualitatively different from the carrier dynamics in either colloidal quantum dots or epitaxial quantum wells. TOC FIGURE:
Effective one-band approach for the spin splittings in quantum wells
Alekseev, P. S.; Nestoklon, M. O.
2017-03-01
The spin-orbit interaction of two-dimensional electrons in quantum wells grown from the III-V semiconductors consists of two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the bulk spin-orbit Hamiltonian which reflects the Td symmetry of the zincblende lattice. While it is known that the quantum well interfaces may also contribute to the Dresselhaus term, the exact structure and relative importance of the interface and bulk contributions are not well understood. To deal with this problem, we perform tight-binding calculations of the spin splittings of the electron levels in [100] GaAs/AlGaAs quantum wells. We show that the obtained spin splittings can be adequately described within the one-band electron Hamiltonian containing, together with the bulk contribution, the two interface contributions to the Dresselhaus term. The magnitude of the interface contribution to the spin-orbit interaction for sufficiently narrow quantum wells is of the same order as the bulk contribution.
ν =2 /3 fractional quantum Hall state in an AlAs quantum well probed by electron spin resonance
Shchepetilnikov, A. V.; Frolov, D. D.; Nefyodov, Yu. A.; Kukushkin, I. V.; Tiemann, L.; Reichl, C.; Dietsche, W.; Wegscheider, W.
2017-10-01
The electron spin resonance (ESR) of two-dimensional electrons confined in a high-quality, 16-nm AlAs quantum well was investigated near the filling factor ν =2 /3 of the fractional quantum Hall effect (FQHE). The spin resonance was robust in the vicinity of the fractional filling ν =2 /3 , indicating that the ν =2 /3 state is at least partially spin polarized. The formation of the 2 /3 FQHE state did not result in any modifications of the ESR linewidth and, hence, of the electron spin relaxation rate. Yet the nuclear spin-lattice relaxation rate extracted from the time decay of the ESR Overhauser shift demonstrated a strong nonmonotonic dependence on the electron filling factor with a minimum near ν =2 /3 . This observation suggests the enhancement of the energy gap in the spin excitation spectrum of two-dimensional electrons at the ν =2 /3 state.
Characterization of strained InGaAs single quantum well structures by ion beam methods
International Nuclear Information System (INIS)
Yu, K.M.; Chan, K.T.
1990-01-01
We have investigated strained InGaAs single quantum well structures using MeV ion beam methods. The structural properties of these structures, including composition and well size, have been studied. It has been found that the composition obtained by Rutherford backscattering spectrometry and particle-induced x-ray emission techniques agrees very well with that obtained by the ion channeling method
Energy Technology Data Exchange (ETDEWEB)
Curilef, S [Departamento de Fisica, Universidad Catolica del Norte, Antofagasta (Chile); Zander, C [Physics Department, University of Pretoria, Pretoria 0002 (South Africa); Plastino, A R [Physics Department, University of Pretoria, Pretoria 0002 (South Africa)
2006-09-01
The connection between entanglement and the speed of quantum evolution (as measured by the time needed to reach an orthogonal state) is discussed in the case of two quantum particles moving in a one-dimensional double well. The aforementioned connection offers an interesting opportunity of discussing the basic features of quantum entanglement within an elementary context, using concepts and methods usually included in university courses of quantum mechanics.
InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation
DEFF Research Database (Denmark)
Jensen, Jacob Riis; Hvam, Jørn Märcher; Langbein, Wolfgang
2000-01-01
We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group...
Quantum-well states and induced magnetism in Fe/CuN/Fe bcc (001) trilayers
DEFF Research Database (Denmark)
Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt
1996-01-01
profiles of two single Fe/Cu interfaces. The small deviations from this simple superposition are shown to be a consequence of quantum-well states confined within the paramagnetic spacer. This connection is confirmed by direct calculation of the state density. The results are of conceptual interest...
Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well
International Nuclear Information System (INIS)
Ungan, F.
2011-01-01
In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schroedinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al x Ga 1-x As are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures. - Highlights: → The doping concentration has a great effect on the optical characteristics of these structures. → The structure parameters have a great effect on the optical properties of these structures. → The total absorption coefficients reduced as the incident optical intensity increases. → The RICs reduced as the incident optical intensity increases.
International Nuclear Information System (INIS)
Chemla, D.S.
1993-01-01
This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells
DEFF Research Database (Denmark)
Dery, H.; Tromborg, Bjarne; Eisenstein, G.
2003-01-01
We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared...
Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well
DEFF Research Database (Denmark)
Hill, N. P. R.; Nicholls, J. T.; Linfield, E. H.
1997-01-01
At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between...
DEFF Research Database (Denmark)
Zhang, Aihua; Peng, Mingzeng; Willatzen, Morten
2017-01-01
The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain...
DEFF Research Database (Denmark)
Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.
2014-01-01
The effect of asymmetric barriers on the light-current characteristic (LCC) of a quantum well laser was studied theoretically and experimentally. It is shown that the utilization of asymmetric barriers in a waveguide prevents the nonlinearity of LCC and, consequently, allows rising of the maximum...... output power....
Formation of an order in a system of exciton condensed phase islands in quantum wells
Sugakov, V. I.
2004-01-01
A theory of exciton condensed phase creation in two-dimensional system is presented. The theory is applied to explain the appearance of the periodical fragmentation which was observed last years in luminescence from the ring around laser spot in crystal with double quantum wells.
Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser
Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song
2018-01-01
We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.
Optimization of growth of InGaAs/InP quantum wells using ...
Indian Academy of Sciences (India)
Home; Journals; Bulletin of Materials Science; Volume 23; Issue 3. Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry. S Bhunia P Banerji T K Chaudhuri A R Haldar D N Bose Y Aparna M B Chettri B R Chakraborty. Semiconducting Materials Volume 23 ...
Magnée, P.H.C.; Hartog, S.G. den; Wees, B.J. van; Klapwijk, T.M.
1995-01-01
We have experimentally investigated the electronic transport properties of an AlSb/InAs/AlSb quantum well, where part of the AlSb top layer has been replaced with a superconducting Nb strip. By doing a transmission experiment underneath the Nb strip and comparing the results with a model based on
Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers
DEFF Research Database (Denmark)
Zhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.
2012-01-01
We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference...
International Nuclear Information System (INIS)
Helgesen, P.
1992-04-01
In this work the author investigate the subband nature of multiple quantum well structures by photoconductance spectroscopy, optical absorption measurements and tunneling experiments. Both interband and intraband transitions have been studied. The work is aimed at making an infrared detector using wide band gap semiconductors. 14 refs
Thermalization of Hot Free Excitons in ZnSe-Based Quantum Wells
DEFF Research Database (Denmark)
Hoffmann, J.; Umlauff, M.; Kalt, H.
1997-01-01
Thermalization of hot-exciton populations in ZnSe quantum wells occurs on a time scale of 100 ps. Strong exciton-phonon coupling in II-VI semiconductors leads to a direct access to the thermalization dynamics via time-resolved spectroscopy of phonon-assisted luminescence. The experimental spectra...
Interaction-induced effects in the nonlinear coherent response of quantum-well excitons
DEFF Research Database (Denmark)
Wagner, Hans Peter; Schätz, A.; Langbein, Wolfgang Werner
1999-01-01
Interaction-induced processes are studied using the third-order nonlinear polarization created in polarization-dependent four-wave-mixing experiments (FWM) on a ZnSe single quantum well. We discuss their influence by a comparison of the experimental FWM with calculations based on extended optical...
Energy Technology Data Exchange (ETDEWEB)
Slavcheva, G., E-mail: gsk23@bath.ac.uk [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom); Kavokin, A.V., E-mail: A.Kavokin@soton.ac.uk [School of Physics and Astronomy, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Spin Optics Laboratory, St. Petersburg State University, 1, Ulyanovskaya 198504 (Russian Federation)
2014-11-15
Optical pumping of excited exciton states in a semiconductor quantum well embedded in a microcavity is a tool for realisation of ultra-compact terahertz (THz) lasers based on stimulated optical transition between excited (2p) and ground (1s) exciton state. We show that the probability of two-photon absorption by a 2p-exciton is strongly dependent on the polarisation of both pumping photons. Five-fold variation of the threshold power for terahertz lasing by switching from circular to co-linear pumping is predicted. We identify photon polarisation configurations for achieving maximum THz photon generation quantum efficiency.
Generic mechanisms of decoherence of quantum oscillations in magnetic double-well systems
International Nuclear Information System (INIS)
Chudnovsky, Eugene M.
2004-01-01
Fundamental conservation laws mandate parameter-free generic mechanisms of decoherence of quantum oscillations in double-well systems. We consider two examples: tunneling of the magnetic moment in nanomagnets and tunneling between macroscopic current states in SQUIDs. In both cases the decoherence occurs via emission of phonons and photons at the oscillation frequency. We also show that in a system of identical qubits the decoherence greatly increases due to the superradiance of electromagnetic and sound waves. Our findings have important implications for building elements of quantum computers based upon nanomagnets and SQUIDs
Generic mechanisms of decoherence of quantum oscillations in magnetic double-well systems
Energy Technology Data Exchange (ETDEWEB)
Chudnovsky, Eugene M. E-mail: chudnov@lehman.cuny.edu
2004-05-01
Fundamental conservation laws mandate parameter-free generic mechanisms of decoherence of quantum oscillations in double-well systems. We consider two examples: tunneling of the magnetic moment in nanomagnets and tunneling between macroscopic current states in SQUIDs. In both cases the decoherence occurs via emission of phonons and photons at the oscillation frequency. We also show that in a system of identical qubits the decoherence greatly increases due to the superradiance of electromagnetic and sound waves. Our findings have important implications for building elements of quantum computers based upon nanomagnets and SQUIDs.
Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well
Fan, W. C.; Chou, W. C.; Lee, J. D.; Lee, Ling; Phu, Nguyen Dang; Hoang, Luc Huy
2018-03-01
We demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than 2 nm, the carrier lifetime increasing from 20 ns to nearly 200 ns was successfully achieved. By utilizing the time-resolved photoluminescence (TRPL) and PL with different excitation power, we identify the PL emission from the coupled QDs consisting of two recombination mechanisms. One is the recombination between electrons in ZnSe barrier and holes confined within ZnTe QDs, and the other is between electrons confined in Zn0.88Cd0.12Se QW and holes confined within ZnTe QDs. According to the band diagram and power-dependent PL, both of the two recombinations reveal the type-II transition. In addition, the second recombination mechanism dominates the whole carrier recombination as the spacer thickness is less than 2 nm. A significant extension of carrier lifetime by increasing the electron and hole separation is illustrated in a type-II ZnTe/ZnSe QD structure coupling with a type-I ZnCdSe/ZnSe QW. Current sample structure could be used to increase the quantum efficient of solar cell based on the II-VI compound semiconductors.
High-harmonic generation in a quantum electron gas trapped in a nonparabolic and anisotropic well
Hurst, Jérôme; Lévêque-Simon, Kévin; Hervieux, Paul-Antoine; Manfredi, Giovanni; Haas, Fernando
2016-05-01
An effective self-consistent model is derived and used to study the dynamics of an electron gas confined in a nonparabolic and anisotropic quantum well. This approach is based on the equations of quantum hydrodynamics, which incorporate quantum and nonlinear effects in an approximate fashion. The effective model consists of a set of six coupled differential equations (dynamical system) for the electric dipole and the size of the electron gas. Using this model we show that: (i) high harmonic generation is related to the appearance of chaos in the phase space, as attested to by related Poincaré sections; (ii) higher order harmonics can be excited efficiently and with relatively weak driving fields by making use of chirped electromagnetic waves.
Modeling optically pumped NMR and spin polarization in GaAs/AlGaAs quantum wells
Saha, D.; Wood, R.; Tokarski, J. T.; McCarthy, L. A.; Bowers, C. R.; Sesti, E. L.; Hayes, S. E.; Kuhns, P. L.; McGill, S. A.; Reyes, A. R.; Sanders, G. D.; Stanton, C. J.
2014-08-01
Optically-pumped nuclear magnetic resonance (OPNMR) spectroscopy is an emerging technique to probe electronic and nuclear spin properties in bulk and quantum well semiconductors. In OPNMR, one uses optical pumping with light to create spin-polarized electrons in a semiconductor. The electron spin can be transferred to the nuclear spin bath through the Fermi contact hyperfine interaction which can then be detected by conventional NMR. The resulting NMR signal can be enhanced four to five orders of magnitude or more over the thermal equilibrium signal. In previous work, we studied OPNMR in bulk GaAs where we investigated the strength of the OPNMR signal as a function of the pump laser frequency. This allowed us to study the spin-split valence band. Here we report on OPNMR studies in GaAs/AlGaAs quantum wells. We focus on theoretical calculations for the average electron spin polarization at different photon energies for different values of external magnetic field in both unstrained and strained quantum wells. Our calculations allow us to identify the Landau level transitions which are responsible for the peaks in the photon energy dependence of the OPNMR signal intensity. The calculations are based on the 8- band Pidgeon-Brown model generalized to include the effects of the quantum confinement potential as well as pseudomorphic strain at the interfaces. Optical properties are calculated within the golden rule approximation. Detailed comparison to experiment allows one to accurately determine valence band spin splitting in the quantum wells including the effects of strain.
Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well
Directory of Open Access Journals (Sweden)
H. J. Huang
2015-11-01
Full Text Available The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC, or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.
Quantum double-well chain: Ground-state phases and applications to hydrogen-bonded materials
International Nuclear Information System (INIS)
Wang, X.; Campbell, D.K.; Gubernatis, J.E.
1994-01-01
Extrapolating the results of hybrid quantum Monte Carlo simulations to the zero temperature and infinite-chain-length limits, we calculate the ground-state phase diagram of a system of quantum particles on a chain of harmonically coupled, symmetric, quartic double-well potentials. We show that the ground state of this quantum chain depends on two parameters, formed from the ratios of the three natural energy scales in the problem. As a function of these two parameters, the quantum ground state can exhibit either broken symmetry, in which the expectation values of the particle's coordinate are all nonzero (as would be the case for a classical chain), or restored symmetry, in which the expectation values of the particle's coordinate are all zero (as would be the case for a single quantum particle). In addition to the phase diagram as a function of these two parameters, we calculate the ground-state energy, an order parameter related to the average position of the particle, and the susceptibility associated with this order parameter. Further, we present an approximate analytic estimate of the phase diagram and discuss possible physical applications of our results, emphasizing the behavior of hydrogen halides under pressure
Quasiparticle transport and induced superconductivity in InAs-AlSb quantum wells with Nb electrodes
International Nuclear Information System (INIS)
Kroemer, H.; Nguyen, C.; Hu, E.L.; Yuh, E.L.; Thomas, M.; Wong, K.C.
1994-01-01
Current transport through InAs-AlSb quantum wells contacted with superconducting Nb electrodes shows strong evidence for the presence of multiple Andreev reflections (AR's). The efficiency of the multiple AR process is greatly enhanced by the specular normal reflection of electrons at the backplane of the quantum well, thereby permitting multiple AR attempts. Superconductivity observed for sufficiently narrow inter-electrode gaps is interpreted as the result of phase-coherent multiple AR's.Series-connected multi-junction InAs-Nb arrays have been constructed by contacting the InAs-AlSb quantum well with a periodic grating of superconducting Nb electrodes with sub-micrometer spacings. They showed superconductivity at sufficiently low temperatures, in one case as high as 4.2 K. Above the transition temperatures, strong precursors of the superconductivity were observed, in the form of dramatically enhanced zero-bias conductances, decreasing with increasing temperature, but larger by about a factor on the order 10 4 than the fluctuation-induced precursors of thin BCS films. Weak magnetic fields restored non-zero resistance values; the increase in resistance with increasing magnetic field contained a component periodic in the magnetic field, with a period corresponding to a flux per grating cell of only a fraction (∼(1)/(5)-(1)/(2)) of a conventional flux quantum. The observations are interpreted in terms of the formation of a flux cell superlattice. ((orig.))
Scanning capacitance microscopy investigations of InGaAs/InP quantum wells
International Nuclear Information System (INIS)
Douheret, O.; Maknys, K.; Anand, S.
2004-01-01
In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate InGaAs/InP (latticed matched) quantum wells grown by metal-organic vapor phase epitaxy. Using n-doped InP as barriers with different doping levels, different InGaAs wells structures (5, 10 and 20 nm) were investigated. The capability of SCM to detect electrons in the quantum wells is demonstrated, showing in addition, a systematic and consistent trend for the different well widths and barrier doping levels. The SCM results are qualitatively consistent with electron distribution obtained for 1D Poisson/Schroedinger simulation. Finally, resolution issues in SCM are discussed in terms of tip averaging effects
Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells
Yu Guang You; Zhang, J Y; Zheng, Z H; Yang, B J; Zhao Xiao Wei; Shen De Zhen; Kong Xiang Gui
1999-01-01
Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells is studied by recording photoluminescence spectra and photoluminescence decay spectra. The exciton tunnelling from the wide well to the narrow well and the thermal dissociation of excitons are two factors that influence the exciton recombination in this structure. In the narrow well, both of the two processes decrease the emission intensity, whereas, in the wide well, these two processes have contrary influences on the exciton density. The change of the emission intensity depends on which is the stronger one. (author)
International Nuclear Information System (INIS)
Wang, Liancheng; Liu, Zhiqiang; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong; Zhang, Zi-Hui
2016-01-01
The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.
Energy Technology Data Exchange (ETDEWEB)
Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Engineering Product Development Pillar (EPD), Singapore University of Technology & Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Mind Star (Beijing) Technology Co., Ltd., Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872 (China); Liu, Zhiqiang, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Zi-Hui, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401 (China)
2016-04-14
The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.
Towards an understanding of hot carrier cooling mechanisms in multiple quantum wells
Conibeer, Gavin; Zhang, Yi; Bremner, Stephen P.; Shrestha, Santosh
2017-09-01
Multiple quantum wells have been shown significantly reduced hot carrier cooling rates compared to bulk material and are thus a promising candidate for hot carrier solar cell absorbers. However, the mechanism(s) by which hot carrier cooling is restricted is not clear. A systematic study of carrier cooling rates in GaAs/AlAs multiple quantum wells (MQWs) with either varying barrier thickness or varying well thickness is presented in this paper. These allow an investigation as to whether the mechanisms of either a modification in hot carrier diffusion or a localisation of phonons emitted by hot carriers are primarily responsible for reduced carrier cooling rates. With the conclusion that for the structures investigated the situation is rather more complex with both carrier mobility to modify hot carrier diffusion, different diffusion rates for electrons and holes and reflection and localisation of phonons to enhance phonon bottleneck all playing their parts in modulating phonon reabsorption and hot carrier behaviour.
Directory of Open Access Journals (Sweden)
Dhaneshwar Mishra
2017-07-01
Full Text Available Exact closed-form expressions have been derived for the stresses and the electric fields induced in piezoelectric multilayers deposited on a substrate with lattice misfit and thermal expansion coefficient mismatch. The derived formulations can model any number of layers using recursive relations that minimize the computation time. A proper rotation matrix has been utilized to generalize the expressions so that they can be used for various growth orientations with each layer having hexagonal crystal symmetry. As an example, the influence of lattice misfit and thermal expansion coefficient mismatch on the state of electroelastic fields in different layers of GaN multi quantum wells has been examined. A comparison with the finite element analysis results showed very close agreement. The analytical expressions developed herein will be useful in designing optoelectronic devices as well as in predicting defect density in multi quantum wells.
International Nuclear Information System (INIS)
Kannan, E S; Karamad, M; Kim, Gil-Ho; Farrer, I; Ritchie, D A
2010-01-01
Magnetotransport measurements were performed in two widely separated double quantum well systems with different starting disorders. In the weak magnetic field regime, a crossover from negative to positive magnetoresistance in the longitudinal resistivity was observed in the system with weak disorder when the electron densities in the neighboring wells were significantly unbalanced. The crossover was found to be the result of the exchange-energy-assisted interactions between the electrons occupying the lowest subbands in the neighboring wells. In the case of the system with strong disorder short range scattering dominated the scattering process and no such transition in longitudinal resistivity in the low magnetic field regime was observed. However, at high magnetic fields, sharp peaks were observed in the Hall resistance due to the interaction between the edge states in the quantum Hall regime.
Quantum-Carnot engine for particle confined to 2D symmetric potential well
International Nuclear Information System (INIS)
Belfaqih, Idrus Husin; Sutantyo, Trengginas Eka Putra; Prayitno, T. B.; Sulaksono, Anto
2015-01-01
Carnot model of heat engine is the most efficient cycle consisting of isothermal and adiabatic processes which are reversible. Although ideal gas usually used as a working fluid in the Carnot engine, Bender used quantum particle confined in 1D potential well as a working fluid. In this paper, by following Bender we generalize the situation to 2D symmetric potential well. The efficiency is express as the ratio of the initial length of the system to the final length of the compressed system. The result then is shown that for the same ratio, 2D potential well is more efficient than 1D potential well
Quantum-Carnot engine for particle confined to 2D symmetric potential well
Energy Technology Data Exchange (ETDEWEB)
Belfaqih, Idrus Husin, E-mail: idrushusin21@gmail.com; Sutantyo, Trengginas Eka Putra, E-mail: trengginas.eka@gmail.com; Prayitno, T. B., E-mail: teguh-budi@unj.ac.id [Department of Physics, Universitas Negeri Jakarta, Jl. Pemuda Rawamangun, Jakarta Timur, 13220 (Indonesia); Sulaksono, Anto, E-mail: anto.sulaksono@sci.ui.ac.id [Department of Physics, Universitas Indonesia, Depok, Jawa Barat, 164242 (Indonesia)
2015-09-30
Carnot model of heat engine is the most efficient cycle consisting of isothermal and adiabatic processes which are reversible. Although ideal gas usually used as a working fluid in the Carnot engine, Bender used quantum particle confined in 1D potential well as a working fluid. In this paper, by following Bender we generalize the situation to 2D symmetric potential well. The efficiency is express as the ratio of the initial length of the system to the final length of the compressed system. The result then is shown that for the same ratio, 2D potential well is more efficient than 1D potential well.
Photoreflectance studies of electronic transitions in quantum well structures under high presure
Chandrasekhar, Holakere R.; Chandrasekhar, Meera
1990-08-01
Superlattices of alternating layers of semiconductors were first proposed1 in 1970, and since then a variety of structures have been grown. Their technological importance has spurred considerable experimental and theoretical work. The unique feature of quantum confinement of carriers has made possible unusual devices. By combining various semiconductors and alloys of ffl-V, 11-TV and group IV materials, unusual band lineups between neighboring layers have been obtained. Both lattice matched and strained layer structures have been grown. In this article we will focus on the electronic structure of the quantum well heterostructures under the external perturbation of hydrostatic pressure. Pressure has been used extensively to investigate materials in regions of phase space not otherwise accessib1. lu the study of quantum well structures, it has also been used to move band edges in a controlled fashion, and alter band lineups, allowing the determination of band offsets with an accuracy that was not possible without the use of pressure. As in bulk semiconductors, optical techniques provide powerful tools in studying the electronic states in quantum well heterostructures (QWH). Photoluminescence (PL) spectroscopy is only sensitive to spectral features associated with energy states close to the bottom of the well due to rapid thermalization of carriers. Photoluminescence excitation (PLE) is often limited by the availability of tunable lasers. Photoreflectance (PR), on the other hand, can provide a rich structure due to both symmetry allowed and forbidden transitions encompassing the entire quantum well. This sensitivity is due to the derivative nature of the spectroscopy. Experiments can be carried out easily at different temperatures and over wide spectral regions. This article is organized as follows. In section 2 we will review some of the theoretical calculations of electronic bands in quantum wells and discuss the changes expected under pressure. In Sec. 3, we
Growth, Characterization, and Optical Spectroscopy of Copper Cloride Quantum Well Structures
Shuh, David Kelly
1990-01-01
The first CuCl quantum well structures of the type CaF_2/CuCl/CaF_2 , in which the thicknesses of the confined CuCl layers are varied from bulk-like to 12A, have been grown on Si and Al_2O_3 (1102) substrates by molecular beam epitaxy. The quantum well structures were characterized by low-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction techniques. The optical properties of the CuCl films have been characterized by low-temperature absorption, excitation, and excitation-density dependent photoluminescence. Striking differences in the excitonic emission spectra are observed between the quantum well structures and a bulk single crystal sample of CuCl. Excitons were also formed by irradiation of these structures with UV frequencies above the CuCl bandgap, and the spectral and temporal dependences of the recombination radiation were compared to those of a bulk CuCl single crystal. The photoluminescence lineshapes of the free excitons in the thin films were characteristic of a much hotter exciton temperature and of much shorter lifetimes (A simple kinetic model is proposed to rationalize the exciton dynamics in the quantum well structures. Stimulated emission is observed from a 30A CuCl quantum well structure created by a two-photon resonant Raman dye laser excitation and attributed to the radiative recombination of the excitonic molecule to yield two photons. Photoluminescence measurements from a 12A CuCl quantum well structure, excited by a continuous wave Ar-ion laser, show a marked increase in emission from the region characteristic of excitonic molecule recombination compared to previous investigations. A Stokes shift of the free exciton photoluminescence is observed from the sample which arises from non-uniformities at the interfaces between the potential barriers and the semiconductor. Thin films of CuCl were deposited by molecular beam epitaxy directly onto a room
Long-range transport in excitonic dark states in coupled quantum wells.
Snoke, D; Denev, S; Liu, Y; Pfeiffer, L; West, K
2002-08-15
During the past ten years, coupled quantum wells have emerged as a promising system for experiments on Bose condensation of excitons, with numerous theoretical and experimental studies aimed at the demonstration of this effect. One of the issues driving these studies is the possibility of long-range coherent transport of excitons. Excitons in quantum wells typically diffuse only a few micrometres from the spot where they are generated by a laser pulse; their diffusion is limited by their lifetime (typically a few nanoseconds) and by scattering due to disorder in the well structure. Here we report photoluminescence measurements of InGaAs quantum wells and the observation of an effect by which luminescence from excitons appears hundreds of micrometres away from the laser excitation spot. This luminescence appears as a ring around the laser spot; almost none appears in the region between the laser spot and the ring. This implies that the excitons must travel in a dark state until they reach some critical distance, at which they collectively revert to luminescing states. It is unclear whether this effect is related to macroscopic coherence caused by Bose condensation of excitons.
International Nuclear Information System (INIS)
Bergbauer, Werner; Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold; Benstetter, Guenther
2008-01-01
As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift
DEFF Research Database (Denmark)
Duggen, Lars; Willatzen, Morten; Lassen, Benny
2008-01-01
A three-layered zinc-blende quantum-well structure is analyzed subject to both static and dynamic conditions for different crystal growth directions taking into account piezoelectric effects and lattice mismatch. It is found that the strain component Szz in the quantum-well region strongly depends...... on the crystal growth direction and that a piezoelectric strain contribution exists in zinc blende as in wurtzite, albeit smaller. It is also found in the absence of loss effects that resonance frequencies, giving large strains in the structure, depend strongly on the crystal growth direction. Due to the higher...... symmetry of the zinc-blende structure, we find in a one-dimensional model that piezoelectric effects do not affect strain values for zinc-blende structures grown along the [001] direction in contrast to the corresponding wurtzite result. However, zinc-blende structures grown along a general crystal...
Optical properties of InGaN/GaN multiple quantum wells
Energy Technology Data Exchange (ETDEWEB)
Lee, Joo In; Lee, Chang Myung [Korea Research Institute of Standards and Science, Taejon (Korea, Republic of); Leem, Jae Young [Inje Univ., Kimhae (Korea, Republic of); Lim, Ki Soo [Chungbuk National Univ., Cheongju (Korea, Republic of); Han, Il Ki [Korea Institute of Science and Technology, Seoul (Korea, Republic of)
2002-03-01
We have used steady-state and time-resolved photoluminescence to investigate optical properties of In{sub 0.13}Ga{sub 0.87}N/GaN multiple quantum wells (MQW) grown by using metalorganic chemical vapor deposition. The quantum well spectra were explained in terms of the radiative recombination of excitons in the localized states. Exciton formation of the InGaN MQW might be delayed for excitations above the GaN barrier excitation compared with exciton formation in excitations below the GaN barrier. The critical temperature at which nonradiative recombination dominantly occurred was increased under the excitation below the GaN barrier because screening caused by carriers in the GaN barrier vanished.
Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Beukman, Arjan J. A.; de Vries, Folkert K.; van Veen, Jasper; Skolasinski, Rafal; Wimmer, Michael; Qu, Fanming; de Vries, David T.; Nguyen, Binh-Minh; Yi, Wei; Kiselev, Andrey A.; Sokolich, Marko; Manfra, Michael J.; Nichele, Fabrizio; Marcus, Charles M.; Kouwenhoven, Leo P.
2017-12-01
The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β =28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.
Quantum wells, wires and dots theoretical and computational physics of semiconductor nanostructures
Harrison, Paul
2016-01-01
Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: - Properties of non-parabolic energy bands - Matrix solutions of the Poisson and Schrodinger equations - Critical thickness of strained materials - Carrier scattering by interface roughness, alloy disorder and impurities - Density matrix transport modelling -Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is pr...
Characterization of individual layers in a bilayer electron system produced in a wide quantum well
Dorozhkin, S. I.; Kapustin, A. A.; Fedorov, I. B.; Umansky, V.; von Klitzing, K.; Smet, J. H.
2018-02-01
Here, we report on a transparent method to characterize individual layers in a double-layer electron system, which forms in a wide quantum well, and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and the appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system.
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well
Energy Technology Data Exchange (ETDEWEB)
Hasanov, Kh. A., E-mail: xanlarhasanli@rambler.ru; Huseynov, J. I. [Azerbaijan State Pedagogical University (Azerbaijan); Dadashova, V. V. [Baku State University (Azerbaijan); Aliyev, F. F. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)
2016-03-15
The theory of phonon-drag thermopower resulting from a temperature gradient in the plane of a two-dimensional electron gas layer in a parabolic quantum well is developed. The interaction mechanisms between electrons and acoustic phonons are considered, taking into account potential screening of the interaction. It is found that the effect of electron drag by phonons makes a significant contribution to the thermopower of the two-dimensional electron gas. It is shown that the consideration of screening has a significant effect on the drag thermopower. For the temperature dependence of the thermopower in a parabolic GaAs/AlGaAs quantum well in the temperature range of 1–10 K, good agreement between the obtained theoretical results and experiments is shown.
Electron-electron scattering and mobilities in semiconductors and quantum wells
International Nuclear Information System (INIS)
Lyo, S.K.
1986-01-01
The effect of electron-electron scattering on the mobility in semiconductors and semiconductor quantum wells is examined. A general exact formula is derived for the mobility, when the electron-electron collision rate is much faster than other scattering rates such as those by ionized impurities and phonons. In this limit, the transport relaxation rate is independent of the carrier's energy and contributions to the inverse mobility from individual scattering mechanism add up. The mobility becomes significantly reduced from its value in the absence of electron-electron scattering. When the collision rates are not necessarily dominated by electron-electron scattering, the mobility is calculated by the Kohler-Sondheimer variational method in the presence of ionized-impurity scattering and acoustic-phonon scattering in a nondegenerate two-dimensional quantum well
Matsumoto, Takahiro; Iwayama, Sho; Saito, Takao; Kawakami, Yasuyuki; Kubo, Fumio; Amano, Hiroshi
2012-10-22
We report the successful fabrication of a compact deep ultraviolet emission device via a marriage of AlGaN quantum wells and graphene nanoneedle field electron emitters. The device demonstrated a 20-mW deep ultraviolet output power and an approximately 4% power efficiency. The performance of this device may lead toward the realization of an environmentally friendly, convenient and practical deep ultraviolet light source.
Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Timofeev, V. B.; Hvam, Jørn Märcher
2000-01-01
Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light...... is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitions....
Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser
Directory of Open Access Journals (Sweden)
L. Li
2012-12-01
Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.
Model of fragmentation of the exciton inner ring in semiconductor quantum wells
Chernyuk, A. A.; Sugakov, V. I.; Tomylko, V. V.
2016-01-01
The appearance of the non-homogeneous structures of the indirect exciton density distribution in the region of the quantum well (in the region of the inner ring) is explained. The structure (the fragmentation) occurs due to the exciton condensed phase formation because of interaction between excitons. The formation of the structure is related with the non-equalibrity of the system, which is caused by the exciton finite lifetime and the presence of the pumpimg. The structure emerges in the sha...
Alexandrov, A. S.; Savel'ev, S. E.
2010-01-01
Following the discovery of Bose-Einstein condensation (BEC) in ultra cold atoms [E. Gosta, Nobel Lectures in Physics (2001-2005), World Scientific (2008)], there has been a huge experimental and theoretical push to try and illuminate a superfluid state of Wannier-Mott excitons. Excitons in quantum wells, generated by a laser pulse, typically diffuse only a few micrometers from the spot they are created. However, Butov et al. and Snoke et al. reported luminescence from indirect and direct exci...
Marinica, Dana Codruta; Kazansky, Andrey K.; Borisov, Andrei G.
2017-12-01
We use a time-dependent density functional theory approach to study the optical response of a hybrid nanostructure where the junction between thin metallic films is functionalized with a quantum well (QW) structure. We show that an unoccupied QW-localized electronic state opens the possibility of the active electrical control of the photoassisted electron transport through the junction and of the absorption at optical frequencies. Control strategies based on an applied bias or an external THz field are demonstrated.
Larmor precession and dwell time of a relativistic particle scattered by a rectangular quantum well
Li, Z J; Liang, J J; Liang, J Q
2003-01-01
The Larmor precession of a relativistic neutral spin particle in a uniform constant magnetic field confined to the region of a one-dimensional rectangular potential well is investigated. The spin precession serves as a clock to measure the time spent by a quantum particle dwelling at a potential well. With the help of a general spin coherent state it is explicitly shown that the spin precession time is equal to the dwell time in the first-order approximation of the infinitesimal field limit. The comparison of the time in a potential well with that in free space shows apparent superluminality.
Magnetoconductance in InN/GaN quantum wells in topological insulator phase
Bardyszewski, W.; Rodak, D.; Łepkowski, S. P.
2017-04-01
We present a theoretical study of the magnetic-field effect on the electronic properties of the two-dimensional, hypothetical topological insulator based on the InN/GaN quantum well system. Using the effective two-dimensional Hamiltonian, we have modelled magneto-transport in mesoscopic, symmetric samples of such materials. It turns out that, as in the case of the other two-dimensional topological insulators, the magnetoconductance in such samples is quantized due to the presence of helical edge states for magnetic fields below a certain critical value and for fairly small disorder strength. However, in our case the helical edge transport is much more prone to the disorder than, for example, in the case of topological insulators based on the HgTe/CdTe quantum wells. At low enough level of disorder and for the Fermi energy located in the energy gap of an infinite planar quantum well, we may expect an interesting phenomenon of non-monotonic dependence of the conductance on the magnetic field caused by the complicated interplay of couplings between the heavy hole, light hole and conduction subbands.
Interface effects on the quantum well states of Pb thin films.
Pan, Shuan; Liu, Qin; Ming, Fangfei; Wang, Kedong; Xiao, Xudong
2011-12-07
Using scanning tunneling spectroscopy, we have studied the interface effect on quantum well states of Pb thin films grown on various metal-terminated (Pb, Ag, and Au) n-type Si(111) surfaces and on two different p-type Si(111) surfaces. The dispersion relation E(k) of the electrons of the Pb film and the phase shift at the substrate interface were determined by applying the quantization rule to the measured energy positions of the quantum well states. Characteristic features in the phase shift versus energy curves were identified and were correlated to the directional conduction band of the silicon substrate and to the Schottky barrier formed between the metal film and the semiconductor. A model involving the band structure of the substrate, the Schottky barrier, and the effective thickness of the interface was introduced to qualitatively but comprehensively explain all the observed features of the phase shift at the substrate interface. Our physical understanding of the phase shift is critically important for using interface modification to control the quantum well states.
Scattering mechanisms in shallow undoped Si/SiGe quantum wells
Directory of Open Access Journals (Sweden)
D. Laroche
2015-10-01
Full Text Available We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.
Cascade Type-I Quantum Well GaSb-Based Diode Lasers
Directory of Open Access Journals (Sweden)
Leon Shterengas
2016-05-01
Full Text Available Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm.
InGaAs-GaAs strained layer quantum well heterostructure lasers
Coleman, J. J.; York, P. K.; Beernink, K. J.; Waters, R. G.
1990-05-01
InGaAs-GaAs strained layer quantum well heterostructure lasers offer availability of emission wavelengths in the range of 0.9-1.1 micron, otherwise largely inaccessible with semiconductor diode lasers. Here, InGaAs-GaAs strained layer lasers and laser arrays grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) are described. The growth conditions for preparing these strained layer structures by MOCVD are presented, and time zero characterization of oxide defined stripe broad area lasers is outlined as a function of InGaAs layer composition and thickness, relative to the critical thickness. Various structures, grown throughout the 0.9-1.1-micron wavelength range and having In mole fractions from x = 0 - 0.50, are shown to have low broad area threshold current densities (Jth less than 200 A/sq cm) and other characteristics of unstrained quantum well heterostructure lasers. Recent results indicating highly reliable CW operation of oxide stripe strained quantum well heterostructure lasers are reviewed.
Yakunin, M.V.; Galistu, G.; de Visser, A.
2008-01-01
Rich patterns of transformations in the structure of quantum Hall (QH) effect and magnetoresistivity under tilted magnetic fields were obtained in the InxGa1-xAs/GaAs double quantum well at mK temperatures. Local features correspond to the calculated intersections of Landau levels from different
Yakunin, M.V.; de Visser, A.; Galistu, G.; Podgornykh, S.M.; Sadofyev, Y.G.; Shelushinina, N.G.; Harus, G.I.
2009-01-01
Development of quantum Hall peculiarities due to mobility gap between spin-split magnetic levels with addition of the parallel magnetic field component B|| is analyzed in double quantum wells (DQW) created in InGaAs/GaAs and InAs/AlSb heterosystems chosen due to their relatively large bulk
Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes.
Shi, Teng; Jackson, Howard E; Smith, Leigh M; Jiang, Nian; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Zheng, Changlin; Etheridge, Joanne
2015-03-11
We use low-temperature photoluminescence, photoluminescence excitation, and photoluminescence imaging spectroscopy to explore the optical and electronic properties of GaAs/AlGaAs quantum well tube (QWT) heterostructured nanowires (NWs). We find that GaAs QWTs with widths >5 nm have electronic states which are delocalized and continuous along the length of the NW. As the NW QWT width decreases from 5 to 1.5 nm, only a single electron state is bound to the well, and no optical excitations to a confined excited state are present. Simultaneously, narrow emission lines (fwhm points along the length of the NW. We find that these quantum-dot-like states broaden at higher temperatures and quench at temperatures above 80 K. The lifetimes of these localized states are observed to vary from dot to dot from 160 to 400 ps. The presence of delocalized states and then localized states as the QWTs become more confined suggests both opportunities and challenges for possible incorporation into quantum-confined device structures.
Hart, Sean; Ren, Hechen; Kosowsky, Michael; Ben-Shach, Gilad; Leubner, Philipp; Bruene, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; Halperin, Bertrand; Yacoby, Amir
Conventional s-wave superconductivity arises from singlet pairing of electrons with opposite Fermi momenta, forming Cooper pairs with zero net momentum. Recent studies have focused on coupling s-wave superconductors to systems with an unusual configuration of electronic spin and momentum at the Fermi surface, where the nature of the paired state can be modified and the system may even undergo a topological phase transition. Here we present measurements on Josephson junctions based on HgTe quantum wells coupled to aluminum or niobium superconductors, and subject to a magnetic field in the plane of the quantum well. We observe that the in-plane magnetic field modulates the Fraunhofer interference pattern, and that this modulation depends both on electron density and on the direction of the in-plane field with respect to the junction. However, the orientation of the junction with respect to the underlying crystal lattice does not impact the measurements. These findings suggest that spin-orbit coupling plays a role in the observed behavior, and that measurements of Josephson junctions in the presence of an in-plane field can elucidate the Fermi surface properties of the weak link material. NSF DMR-1206016; STC Center for Integrated Quantum Materials under NSF Grant No. DMR-1231319; NSF GRFP under Grant DGE1144152, Microsoft Corporation Project Q.
Spin-polarized spin-orbit-split quantum-well states in a metal film
Energy Technology Data Exchange (ETDEWEB)
Varykhalov, Andrei; Sanchez-Barriga, Jaime; Gudat, Wolfgang; Eberhardt, Wolfgang; Rader, Oliver [BESSY Berlin (Germany); Shikin, Alexander M. [St. Petersburg State University (Russian Federation)
2008-07-01
Elements with high atomic number Z lead to a large spin-orbit coupling. Such materials can be used to create spin-polarized electronic states without the presence of a ferromagnet or an external magnetic field if the solid exhibits an inversion asymmetry. We create large spin-orbit splittings using a tungsten crystal as substrate and break the structural inversion symmetry through deposition of a gold quantum film. Using spin- and angle-resolved photoelectron spectroscopy, it is demonstrated that quantum-well states forming in the gold film are spin-orbit split and spin polarized up to a thickness of at least 10 atomic layers. This is a considerable progress as compared to the current literature which reports spin-orbit split states at metal surfaces which are either pure or covered by at most a monoatomic layer of adsorbates.
Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
Cilibrizzi, Pasquale; Askitopoulos, Alexis, E-mail: Alexis.Askitopoulos@soton.ac.uk; Silva, Matteo; Lagoudakis, Pavlos G. [Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom); Bastiman, Faebian; Clarke, Edmund [EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Zajac, Joanna M.; Langbein, Wolfgang [School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA (United Kingdom)
2014-11-10
The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations.
Energy Technology Data Exchange (ETDEWEB)
Scifres, D.R.; Burnham, R.D.; Bernstein, M.; Chung, H.; Endicott, F.; Mosby, W.; Tramontana, J.; Walker, J.; Yingling, R.D. Jr.
1982-09-15
The threshold current density, laser wavelength, grown layer thickness, reverse breakdown voltage, and far-field radiation pattern as a function of position on the grown wafer are reported for broad area multiple quantum well GaAlAs heterostructure lasers grown by metalorganic chemical vapor deposition. It is found that the layer thickness varies across a 1.5-in. sample by as much as 20% at the outer edges of the water, leading to a lasing wavelength shift of as much as 150 A owing to the quantum size effect. It is shown that this thickness variation has only a small effect on the threshold current density across the water such that the uniformity of threshold current density is comparable to that reported previously for molecular beam epitaxy-grown conventional double heterostructure lasers.
International Nuclear Information System (INIS)
Tzimis, A.; Savvidis, P. G.; Trifonov, A. V.; Ignatiev, I. V.; Christmann, G.; Tsintzos, S. I.; Hatzopoulos, Z.; Kavokin, A. V.
2015-01-01
We report observation of strong light-matter coupling in an AlGaAs microcavity (MC) with an embedded single parabolic quantum well. The parabolic potential is achieved by varying aluminum concentration along the growth direction providing equally spaced energy levels, as confirmed by Brewster angle reflectivity from a reference sample without MC. It acts as an active region of the structure which potentially allows cascaded emission of terahertz (THz) light. Spectrally and time resolved pump-probe spectroscopy reveals characteristic quantum beats whose frequencies range from 0.9 to 4.5 THz, corresponding to energy separation between relevant excitonic levels. The structure exhibits strong stimulated nonlinear emission with simultaneous transition to weak coupling regime. The present study highlights the potential of such devices for creating cascaded relaxation of bosons, which could be utilized for THz emission
Fabrication of resonator-quantum well infrared photodetector test devices and focal plane arrays
Sun, J.; Choi, K. K.; Jhabvala, M. D.; Jhabvala, C. A.; Waczynski, A.; Olver, K.
2014-10-01
Resonator-Quantum Well Infrared Photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To achieve the expected performance, the detector geometry must be produced in precise specification. In particular, the height of the diffractive elements (DE) and the thickness of the active resonator must be uniformly and accurately realized to within 0.05 μm accuracy and the substrates of the detectors have to be removed totally. To achieve these specifications, two optimized inductively coupled plasma (ICP) etching processes are developed. Using these etching techniques, we have fabricated a number of R-QWIP test detectors and FPAs with the required dimensions and completely removed their substrates. The QE spectra were tested to be in close agreement with the theoretical predictions. The operability and spectral uniformity of the focal plane array (FPA) is about 99.1% and 3% respectively.
InGaNAs/GaAs multi-quantum wells and superlattices solar cells
International Nuclear Information System (INIS)
Courel Piedrahita, Maykel; Rimada Herrera, Julio Cesar; Hernandez Garcia, Luis
2011-01-01
A theoretical study of the GaAs/InGaNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the JV characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing increment of 27%. (author)
The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
International Nuclear Information System (INIS)
Hellings, Geert; Hikavyy, Andriy; Mitard, Jerome; Witters, Liesbeth; Benbakhti, Brahim; Alian, AliReza; Waldron, Niamh; Bender, Hugo; Eneman, Geert; Krom, Raymond; Schulze, Andreas; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Meuris, Marc; Hoffmann, Thomas; De Meyer, Kristin
2012-01-01
The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the V T -tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage.
Resonant Rayleigh scattering of exciton-polaritons in multiple quantum wells
DEFF Research Database (Denmark)
Malpuech, Guillaume; Kavokin, Alexey; Langbein, Wolfgang Werner
2000-01-01
A theoretical concept of resonant Rayleigh scattering (RRS) of exciton-polaritons in multiple quantum wells (QWs) is presented. The optical coupling between excitons in different QWs can strongly affect the RRS dynamics, giving rise to characteristic temporal oscillations on a picosecond scale....... Bragg and anti-Bragg arranged QW structures with the same excitonic parameters are predicted to have drastically different RRS spectra. Experimental data on the RRS from multiple QWs show the predicted strong temporal oscillations at small scattering angles, which are well explained by the presented...... theory....
Directory of Open Access Journals (Sweden)
P. Chen
2017-03-01
Full Text Available The hole distribution and electroluminescence property improvement by adjusting the relative position between quantum wells and p-doped region in InGaN/GaN multiple-quantum-well structures are experimentally and theoretically investigated. Five designed samples with different barrier layer parameters of multiple-quantum-well structure are grown by MOCVD and then fabricated into devices. The electroluminescence properties of these samples are measured and compared. It is found that the output electroluminescence intensity of samples is enhanced if the position of quantum wells shifts towards p-side, while the output power is reduced if their position is shifted towards the n-side. The theoretical calculation of characteristics of these devices using the simulation program APSYS agrees well with the experimental data, illustrating that the effect of relative position between p-doped region and quantum wells on the improvement of hole distribution and electroluminescence performance is significant, especially for InGaN/GaN multiple-quantum-well devices operated under high injection condition.
Superfluidity of indirect excitons and biexcitons in coupled quantum wells and superlattices
Lozovik, Yu E; Willander, M
2002-01-01
The collective properties of indirect excitons in coupled quantum wells (CQWs) are considered. The energy of the ground state of the exciton liquid as a function of the density of electrons e and holes h at different separations D between e and h layers is analysed. The quantum gas-liquid transition as D decreases is studied. The superfluidity appearance temperatures in the system (Kosterlitz-Thouless transition temperatures) have been estimated at different separations D between e and h layers. For the anisotropic two-dimensional e-h system in CQWs the Mott metal-insulator quantum transition is considered. The instability of the ground state of the system of interacting two-dimensional indirect excitons in a slab of superlattice with alternating e and h layers is established. The stable system of indirect quasi-two-dimensional biexcitons, consisting of indirect excitons with opposite directed dipole moments, is considered. The radius and the binding energy of the indirect biexciton are calculated. The collec...
Quantum chaos of a particle in a square well: Competing length scales and dynamical localization
Sankaranarayanan, R.; Lakshminarayan, A.; Sheorey, V. B.
2001-10-01
The classical and quantum dynamics of a particle trapped in a one-dimensional infinite square well with a time-periodic pulsed field is investigated. This is a two-parameter non-KAM (Kolmogorov-Arnold-Moser) generalization of the kicked rotor, which can be seen as the standard map of particles subjected to both smooth and hard potentials. The virtue of the generalization lies in the introduction of an extra parameter R, which is the ratio of two length scales, namely, the well width and the field wavelength. If R is a noninteger the dynamics is discontinuous and non-KAM. We have explored the role of R in controlling the localization properties of the eigenstates. In particular, the connection between classical diffusion and localization is found to generalize reasonably well. In unbounded chaotic systems such as these, while the nearest neighbor spacing distribution of the eigenvalues is less sensitive to the nature of the classical dynamics, the distribution of participation ratios of the eigenstates proves to be a sensitive measure; in the chaotic regimes the latter is log-normal. We find that the tails of the well converged localized states are exponentially localized despite the discontinuous dynamics while the bulk part shows fluctuations that tend to be closer to random matrix theory predictions. Time evolving states show considerable R dependence, and tuning R to enhance classical diffusion can lead to significantly larger quantum diffusion for the same field strengths, an effect that is potentially observable in present day experiments.
Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells
Lee, Joon-Ho; Shin, Mincheol; Byun, Seok-Joo; Kim, Wangki
2018-03-01
Resonant-tunneling diodes (RTDs) with auxiliary quantum wells ( e.g., emitter prewell, subwell, and collector postwell) are studied using a Wigner transport equation (WTE) discretized by a thirdorder upwind differential scheme. A flat-band potential profile is used for the WTE simulation. Our calculations revealed functions of the auxiliary wells as follows: The prewell increases the current density ( J) and the peak voltage ( V p ) while decreasing the peak-to-valley current ratio (PVCR), and the postwell decreases J while increasing the PVCR. The subwell affects J and PVCR, but its main effect is to decrease V p . When multiple auxiliary wells are used, each auxiliary well contributes independently to the transport without producing side effects.
DEFF Research Database (Denmark)
Turchinovich, Dmitry; Monozon, B. S.; Jepsen, Peter Uhd
2006-01-01
In this work we describe the ultrafast excitation kinetics of biased quantum well, arising from the optically induced dynamical screening of a bias electric field. The initial bia electric field inside the quantum well is screened by the optically excited polarized electron-hole pairs. This leads...... to a dynamical modification of the properties of the system within an excitation pulse duration. We calculate the excitation kinetics of a biased quantum well and the dependency of resulting electronic and optical properties on the excitation pulse fluence, quantum well width,and initial bias field strength. Our...... wells are in good agreement with our experimental observations [Turchinovich et al., Phys. Rev. B 68, 241307(R) (2003)], as well as in perfect compliance with qualitative considerations. ©2006 American Institute of Physics...
International Nuclear Information System (INIS)
Priyadarshi, Shekhar; Leidinger, Markus; Pierz, Klaus; Racu, Ana M.; Siegner, Uwe; Bieler, Mark; Dawson, Philip
2009-01-01
We report the observation and the study of an additional shift current tensor element in (110)-oriented GaAs quantum wells, which arises from an out-of-plane asymmetry of the quantum well structure. The current resulting from this tensor element is optically induced with 150 fs laser pulses and detected by measuring the simultaneously emitted terahertz radiation. This terahertz spectroscopy of shift currents is a powerful technique for symmetry investigations, which shows, for example, that our nominally symmetric (110)-oriented GaAs/AlGaAs quantum wells grown by molecular beam epitaxy are in reality asymmetric structures with different right and left interfaces.
International Nuclear Information System (INIS)
Kasapoglu, E.; Sari, H.; Sokmen, I.
2005-01-01
The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells are calculated by using a variational technique within the effective-mass approximation. The results have been obtained in the presence of an electric field applied along the growth direction as a function of hydrostatic pressure, the impurity position, barrier width and the geometric shape of the double quantum wells
Theory of resonant donor-impurity magnetopolaron in semiconductor quantum wells
International Nuclear Information System (INIS)
Osorio, F.A.P.; Maialle, M.Z.; Hipolito, O.
1989-11-01
We report for the first time a theoretical calculation for the resonant donor impurity magnetopolaron in GaAs-GA 1-x Al x As quantum-well structures. The intra donor 1s → 2p, transition frequencies are calculated as a function of the magnetic field, by taking into account the polaron effects and nonparabolicity of the conduction band. We found a pinning behaviour due to interaction with LO phonons as suggested by the experimentalists. Our results for the peak positions of those transitions are in very good agreement with recent experimental data. (author). 18 refs, 1 fig
Zhao, Sh.-C.; Zhang, Sh.-Y.; Xu, Y.-Y.
2014-11-01
Large and tunable negative refractive index (NRI) via electromagnetically induced chirality is demonstrated in a semiconductor quantum wells (SQWs) nanostructure by using the reported experimental parameters in J.F. Dynes et al., Phys. Rev. Lett. 94, 157403 (2005). It is found: the large and controllable NRI with alterable frequency regions is obtained when the coupling laser field and the relative phase are modulated, which will increase the flexibility and possibility of implementing NRI in the SQWs nanostructure. The scheme rooted in the experimental results may lead a new avenue to NRI material in solid-state nanostructure.
Jusserand, B; Poddubny, A N; Poshakinskiy, A V; Fainstein, A; Lemaitre, A
2015-12-31
Polariton-mediated light-sound interaction is investigated through resonant Brillouin scattering experiments in GaAs/AlAs multiple-quantum wells. Photoelastic coupling enhancement at exciton-polariton resonance reaches 10(5) at 30 K as compared to a typical bulk solid room temperature transparency value. When applied to GaAs based cavity optomechanical nanodevices, this result opens the path to huge displacement sensitivities and to ultrastrong coupling regimes in cavity optomechanics with couplings g(0) in the range of 100 GHz.
Spin Dynamics in (111) GaAs/AlGaAs Undoped Asymmetric Quantum Wells
International Nuclear Information System (INIS)
Wang Gang; Ye Hui-Qi; Shi Zhen-Wu; Wang Wen-Xin; Liu Bao-Li; Xavier Marie; Andrea Balocchi; Thierry Amand
2012-01-01
The electron spin dynamics is investigated by the time-resolved Kerr rotation technique in a pair of special GaAs/AlGaAs asymmetric quantum well samples grown on (111)-oriented substrates, whose structures are the same except for their opposite directions of potential asymmetry. A large difference of spin lifetimes between the two samples is observed at low temperature. This difference is interpreted in terms of a cancellation effect between the Dresselhaus spin-splitting term in the conduction band and another term induced by interface inversion asymmetry. The deviation decreases with the increasing temperature, and almost disappears when T > 100 K because the cubic Dresselhaus term becomes more important
Theory of Faraday rotation beatings in quantum wells with great value of spin splitting
Gridnev, V N
2001-01-01
The conductivity electrons spin dynamics in the semiconducting heterostructures when the spin splitting value exceeds the energy levels widening due to collisions is theoretically studied. It is shown that the spin density component normal to the quantum well planes may oscillate with time even by absence of the external magnetic field. These oscillations might be excited and registered through the method of the nonlinear two-pulse spectroscopy. In contrast to the small spin splitting the external cross-sectional magnetic field strongly effects the spin dynamics in this mode
Room-temperature near-field reflection spectroscopy of single quantum wells
DEFF Research Database (Denmark)
Langbein, Wolfgang Werner; Hvam, Jørn Marcher; Madsen, Steen
1997-01-01
. This technique suppresses efficiently the otherwise dominating far-field background and reduces topographic artifacts. We demonstrate its performance on a thin, strained near-surface CdS/ZnS single quantum well at room temperature. The optical structure of these topographically flat samples is due to Cd......We report on a novel optical near-field technique to measure the local polarizability of a topographically flat sample with a spatial resolution better than 100 nm. Using an uncoated fiber probe, we implement a cross-polarization detection of the optical signal at the fiber dither frequency...
Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells
Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.
2007-04-01
We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.
Energy Technology Data Exchange (ETDEWEB)
Chen, Yuan; Deng, Li [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Chen, Aixi, E-mail: aixichen@ecjtu.jx.cn [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Institute for Quantum Computing, University of Waterloo, Ontario N2L 3G1 (Canada)
2015-02-15
We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device.
International Nuclear Information System (INIS)
Chen, Yuan; Deng, Li; Chen, Aixi
2015-01-01
We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device
Fermi surface and quantum well states of V(110) films on W(110)
Energy Technology Data Exchange (ETDEWEB)
Krupin, Oleg [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Rotenberg, Eli [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Kevan, S D [Department of Physics, University of Oregon, Eugene, OR 97403 (United States)
2007-09-05
Using angle-resolved photoemission spectroscopy, we have measured the Fermi surface of V(110) films epitaxially grown on a W(110) substrate. We compare our results for thicker films to existing calculations and measurements for bulk vanadium and find generally very good agreement. For thinner films, we observe and analyse a diverse array of quantum well states that split and distort the Fermi surface segments. We have searched unsuccessfully for a thickness-induced topological transition associated with contact between the zone-centre jungle gym and zone-boundary hole ellipsoid Fermi surface segments. We also find no evidence for ferromagnetic splitting of any bands on this surface.
Spin injection from Co2MnGa into an InGaAs quantum well
DEFF Research Database (Denmark)
Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.
2008-01-01
We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin...... lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency...
Rabi splitting in a quantum well system with Rashba spin-orbital coupling
Ma, Wenjie; Wang, Zhihai; Zhu, Hongbo
2017-01-01
We study the Rabi splitting phenomenon in a quantum well system with Rashba spin-orbital coupling where the spin degree of freedom is driven weakly by an external field. The dynamics of the system can be described by the Jaynes-Cummings model. As we increase the strength of spin-orbital coupling, the system undergoes an energy-level crossing which does not occure in the traditional cavity and circuit QED setups. We find that the intuitive rotating wave approximation in the driving Hamiltonian is ineffective when the energy-level crossing occurs. We also give a physical understanding based on the dressed-state representation.
Quantum Wells, Wires and Dots Theoretical and Computational Physics of Semiconductor Nanostructures
Harrison, Paul
2011-01-01
Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their
Can Hall drag be observed in Coulomb coupled quantum wells in a magnetic field?
DEFF Research Database (Denmark)
Hu, Ben Yu-Kuang
1997-01-01
We study the transresistivity rho(21) (or equivalently, the drag rate) of two Coulomb-coupled quantum wells in the presence of a perpendicular magnetic field, using semi-classical transport theory. Elementary arguments seem to preclude any possibility of observation of ''Hall drag'' (i.e., a non......-zero off-diagonal component in rho(21)). We show that these arguments are specious, and in fact Hall drag can be observed at sufficiently high temperatures when the intralayer transport time tau has significant energy-dependence around the Fermi energy epsilon(F). The ratio of the Hall to longitudinal...
Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells
Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.
2016-01-01
This work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria. We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, a...
Ibrahim, A.; Marsiglio, F.
2018-03-01
The solution to a problem in quantum mechanics is generally a linear superposition of states. The solutions for double well potentials epitomize this property, and go even further than this: they can often be described by an effective model whose low energy features can be described by two states—one in which the particle is on one side of the barrier, and a second where the particle is on the other side. Then the ground state remains a linear superposition of these two macroscopic-like states. In this paper, we illustrate that this property is achieved similarly with an attractive potential that separates two regions of space, as opposed to the traditionally repulsive one. In explaining how this comes about we revisit the concept of "orthogonalized plane waves," first discussed in 1940 to understand electronic band structure in solids, along with the accompanying concept of a pseudopotential. We show how these ideas manifest themselves in a simple double well potential, whose "barrier" consists of a moat instead of the conventional wall.
Growth and characterization of GaInP unicompositional disorder-order-disorder quantum wells
International Nuclear Information System (INIS)
Schneider, R.P. Jr.; Jones, E.D.; Follstaedt, D.M.
1994-01-01
Metalorganic vapor phase epitaxy (MOVPE) is used to grow unicompositional quantum-well (QW) structures, in which the QW and barrier layers are composed of ordered and disordered GaInP, respectively. Transmission electron dark-field micrographs reveal abrupt interfaces between highly ordered QWs and disordered barriers, with no evidence of defect formation. Low-temperature photoluminescence from the structures exhibits relatively broad emission peaks, with emission energy increasing with decreasing QW thickness. The dependence of emission energy on well thickness can be described by a finite square well model only when a type-II band alignment is taken for the heterostructure, in which the conduction band edge of the ordered GaInP QW lies about 135--150 meV below that of the disordered barrier material. These results demonstrate a high degree of control over the ordering process in MOVPE, such that quantum size effects can be realized solely through disorder-order phenomena. Further, the data provide strong support for a type-II (spatially indirect) recombination transition between ordered and disordered GaInP
Theory of carrier dynamics in InSb parabolic quantum wells
Saha, D.; Sanders, G. D.; Stanton, C. J.; Bhowmick, M.; Merritt, T.; Khodaparast, G. A.; Mishima, T. D.; Santos, M. B.
2011-03-01
InSb, with the narrowest gap among the III-V compound semiconductors, shows considerable promise as a quantum well material because its small conduction-band mass gives it a large room temperature electron mobility, and its large g-factor makes it attractive for spintronic devices. We present experiments and theoretical calculations for carrier dynamics in a strained 50-nm thick InSb/AlInSb parabolic quantum well. Our calculations are based on the 8-band Pidgeon-Brown model generalized to include the effects of the parabolic confinement potential as well as pseudomorphic strain. Optical properties are calculated within the golden rule approximation and compared with experiments. We model one and two color, time-resolved pump-probe differential transmission and reflectivity experiments. The change in the infrared probe pulse as a function of delay time provides information on carrier and spin relaxation dynamics. Both interband and intra-band dynamics are studied. Supported by NSF through grants DMR-0507866, DMR-0520550, DMR-0706313, and DMR-0846834.
Rüfenacht, M.; Tsujino, S.; Sakaki, H.
1998-06-01
Recently, it was shown that an electron-hole radiative recombination is induced by a mid-infrared light exciting an intersubband transition in a charge transfer double quantum well (CTDQW). This recombination was attributed to an upstream transfer of electrons from an electron-rich well to a hole-rich well. In this study, we investigated the electrical response of a CTDQW under intersubband optical excitation, and found that a positive photocurrent, opposite in sign and proportional to the applied electric field, accompanies the intersubband-transition-induced luminescence (ITIL) signal. A negative photocurrent component was also observed and attributed to heating processes. This work brings a further evidence of the ITIL process and shows that an important proportion of the carriers are consumed by the transfer of electrons.
Optical studies of charged excitons in II-VI semiconductor quantum wells
Kossacki, P
2003-01-01
A brief review is given of optical studies of doped II-VI quantum wells. The properties of exciton states, neutral as well as positively and negatively charged, are discussed. A wide range of optical measurements is presented: CW as well as picosecond and femtosecond time-resolved absorption, photoluminescence (PL) and PL excitation. The experiments were performed at various carrier concentrations (> 10 sup 1 sup 1 cm sup - sup 2) and temperatures (up to a few tens of kelvins). This review is limited to zero or low magnetic fields, used only to polarize spins of carriers. We discuss the obtained values of various fundamental parameters of the excitonic states: energies, optical transition probabilities and characteristic times of their formation, thermalization and decay. (topical review)
Mitigating Structural Defects in Droop-Minimizing InGaN/GaN Quantum Well Heterostructures
Energy Technology Data Exchange (ETDEWEB)
Zhao, Zhibo; Chesin, Jordan; Singh, Akshay; Nelson, Erik; Wildeson, Isaac; Deb, Parijat; Armstrong, Andrew; Stach, Eric; Gradecak, Silvija
2016-12-01
Modern commercial InGaN/GaN blue LEDs continue to suffer from efficiency droop, a reduction in efficiency with increasing drive current. External quantum efficiency (EQE) typically peaks at low drive currents (< 10 A cm^{2}) and drops monotonically at higher current densities, falling to <85% of the peak EQE at a drive current of 100 A cm^{2}. Mitigating droop-related losses will yield tremendous gains in both luminous efficacy (lumens/W) and cost (lumens/$). Such improvements are critical for continued large-scale market penetration of LED technologies, particularly in high-power and high flux per unit area applications. However, device structures that reduce droop typically require higher indium content and are accompanied by a corresponding degradation in material quality which negates the droop improvement via enhanced Shockley-Read-Hall (SRH) recombination. In this work, we use advanced characterization techniques to identify and classify structural defects in InGaN/GaN quantum well (QW) heterostructures that share features with low-droop designs. Using aberration-corrected scanning transmission electron microscopy (C_{s}-STEM), we find the presence of severe well width fluctuations (WWFs) in a number of low droop device architectures. However, the presence of WWFs does not correlate strongly with external quantum efficiency nor defect densities measured via deep level optical spectroscopy (DLOS). Hence, performance losses in the heterostructures of interest are likely dominated by nanoscale point or interfacial defects rather than large-scale extended defects.
InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties
Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.; Colter, Peter C.; Bedair, S. M.
2016-03-01
Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on InxGa1-xAs1-zPz/InyGa1-yP (x > y) and InxGa1-xP/InyGa1-yP (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of InxGa1-xAs1-zPz/InyGa1-yP can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). The effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.
InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties
International Nuclear Information System (INIS)
Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.; Colter, Peter C.; Bedair, S. M.
2016-01-01
Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In x Ga 1−x As 1−z P z /In y Ga 1−y P (x > y) and In x Ga 1−x P/In y Ga 1−y P (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In x Ga 1−x As 1−z P z /In y Ga 1−y P can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). The effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.
Closed-loop design of active semiconductor quantum well material systems
Moloney, J. V.; Hader, J.; Koch, S. W.
2005-10-01
Semiconductor quantum well active structures are pervasive in many applications of defense related systems ranging from low power edge (DFB), VCSEL and VCSEL emitter arrays to high power low brightness broad area emitters and diode bars. Recent breakthroughs in the development of a new class of high brightness vertical external cavity (VECSEL) emitters offers the potential to replace solid state YAG kW-class laser weapons systems. Remarkably, despite the maturity and dramatic improvement in quality of semiconductor QW growth over the past three decades, there has been no truly predictive means of designing the semiconductor active structure and fast-tracking to a final packaged device. We will describe a fully self-consistent microscopic many-body approach to calculate optical gain, absorption, refractive index spectra and nonradiative recombination rates for a broad class of semiconductor quantum well material systems. The theoretical calculations are free of ad hoc parameter adjustments and provide, for the first time, a means of designing an active semiconductor epi-structure in a predictive manner.
Thin-Wall GaN/InAlN Multiple Quantum Well Tubes.
Durand, Christophe; Carlin, Jean-François; Bougerol, Catherine; Gayral, Bruno; Salomon, Damien; Barnes, Jean-Paul; Eymery, Joël; Butté, Raphaël; Grandjean, Nicolas
2017-06-14
Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metal-organic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical GaN wires surrounded by a core-shell MQW heterostructure followed by in situ selective etching using controlled H 2 /NH 3 annealing at 1010 °C to remove the inner GaN wire part. After this process, well-defined MQW-based tubes having nonpolar m-plane orientation exhibit UV light near 330 nm up to room temperature, consistent with the emission of GaN/InAlN MQWs. Partially etched tubes reveal a quantum-dotlike signature originating from nanosized GaN residuals present inside the tubes. The possibility to fabricate in a simple way thin-wall III-N tubes composed of an embedded MQW-based active region offering controllable optical emission properties constitutes an important step forward to develop new nitride devices such as emitters, detectors or sensors based on tubelike nanostructures.
Direct creation of excitonic molecules by two-photon absorption in quantum wells
International Nuclear Information System (INIS)
Hassan, A.R.
1992-09-01
A theory of the direct creation of excitonic molecule (biexciton) by direct two-photon absorption in semiconductor quantum well structures is developed. Analytical expression of the biexciton two-photon absorption coefficient is given for both photon polarizations. Excitonic-interband-two-photon and exciton one-photon processes in Quantum Wells (QW) have also been investigated. The analytical forms and numerical values of the momentum matrix elements involved in each process are provided. The biexciton matrix element has been calculated adopting a six-parameter variational wave function. A numerical estimation for GaAs QW shows that the biexciton two photon absorption (BTPA) process dominates the other processes by different orders of magnitude. This enhancement essentially comes from the resonance effect and the structure of the matrix elements included in each process. Furthermore, the (BTPA) process in QW for both polarizations is enhanced over its bulk value by about 4 and 5 orders of magnitude respectively. This increase is interpreted as due to the spatial confinement of the QW. (author). 16 refs, 4 tabs
Tunable spin-polarized edge transport in inverted quantum-well junctions
Nanclares, Dimy; Lima, Leandro R. F.; Lewenkopf, Caio H.; da Silva, Luis G. G. V. Dias
2017-10-01
Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of two-dimensional topological insulators, bulk insulator materials with spin-helical metallic edge states protected by time-reversal symmetry. This paper investigates the spectrum and the charge transport in HgTe/CdTe quantum well junctions both in the topological regime and in the absence of time-reversal symmetry. We model the system using the Bernevig-Hughes-Zhang effective Hamiltonian and compute the transport properties using recursive Green's functions with a finite differences' method. Specifically, we have studied the material's spatially resolved conductance in a setup with a gated central region, forming monopolar (n -n'-n ) and heteropolar (n -p -n , n -TI-n ) double junctions, which have been recently realized in experiments. We find regimes in which the edge states carry spin-polarized currents in the central region even in the presence of a small magnetic field, which breaks time-reversal symmetry. More interestingly, the conductance displays spin-dependent, Fabry-Perót-like oscillations as a function of the central gate voltage producing tunable, fully spin-polarized currents through the device.
Landau level transitions in InAs/AlSb/GaSb quantum wells
International Nuclear Information System (INIS)
Wu Xiao-Guang; Pang Mi
2015-01-01
The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band k·p approach without making the axial approximation. At zero magnetic field, for a quantum well with a wide InAs layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron–hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron–hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling. (paper)
DEFF Research Database (Denmark)
Birkedal, Dan; Shah, Jagdeep; Pfeiffer, L. N.
1999-01-01
Recent investigations of secondary emission from quantum well excitons following ultrafast resonant excitation have demonstrated an intricate interplay of coherent Rayleigh scattering and incoherent luminescence. We have very recently demonstrated that it is possible to isolate and time resolve t...
National Research Council Canada - National Science Library
Rabinovich, W. S; Mahon, R; Burris, H. R; Gilbreath, G. C; Goetz, P. G; Moore, C. I; Stell, M. F; Vilcheck, M. J; Witkowsky, J. L; Swingen, L
2005-01-01
A 1550-nm eye-safe, free-space optical communications link is demonstrated at rates up to 5 Mbits/s over a distance of 2 km in the Chesapeake Bay, using quantum-well-based modulating retroreflectors...
Physics of Non-Adiabatic Transport and Field-Domain Effect in Quantum-Well Infrared Photodetectors
National Research Council Canada - National Science Library
Huang, Danhong; Cardimona, David A
2003-01-01
A previous theory for studying the distribution of non-uniform fields in multiple-quantum-well photodetectors under an ac voltage is generalized by including non-adiabatic space-charge-field effects...
Energy transfer of excitons between quantum wells separated by a wide barrier
International Nuclear Information System (INIS)
Lyo, S. K.
2000-01-01
We present a microscopic theory of the excitonic Stokes and anti-Stokes energy-transfer mechanisms between two widely separated unequal quantum wells with a large energy mismatch (Δ) at low temperatures (T). Several important intrinsic energy-transfer mechanisms have been examined, including dipolar coupling, real and virtual photon-exchange coupling, and over-barrier ionization of the excitons via exciton-exciton Auger processes. The transfer rate is calculated as a function of T and the center-to-center distance d between the wells. The rates depend sensitively on T for plane-wave excitons. For localized excitons, the rates depend on T only through the T dependence of the exciton localization radius. For Stokes energy transfer, the dominant energy transfer occurs through a photon-exchange interaction, which enables the excitons from the higher-energy wells to decay into free electrons and holes in the lower-energy wells. The rate has a slow dependence on d, yielding reasonable agreement with recent data from GaAs/Al x Ga 1-x As quantum wells. The dipolar rate is about an order of magnitude smaller for large d (e.g., d=175Aa) with a stronger range dependence proportional to d -4 . However, the latter can be comparable to the radiative rate for small d (e.g., d≤80Aa). For anti-Stokes transfer through exchange-type (e.g., dipolar and photon-exchange) interactions, we show that thermal activation proportional to exp(-Δ/k B T) is essential for the transfer, contradicting a recent nonactivated result based on the Fo''rster-Dexter's spectral-overlap theory. Phonon-assisted transfer yields a negligibly small rate. On the other hand, energy transfer through over-barrier ionization of excitons via Auger processes yields a significantly larger nonactivated rate which is independent of d. The result is compared with recent data
1.3 μm photoluminescence of Ge/GaAs multi-quantum-well structure
Energy Technology Data Exchange (ETDEWEB)
Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Rumyantsev, V. V. [Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University of Nizhny Novgorod (NNSU), Nizhny Novgorod 603950 (Russian Federation); Tonkikh, A. A. [Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) D-06120 (Germany); ZIK SiLi-nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle (Saale) D-06120 (Germany); Zakharov, N. D. [Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) D-06120 (Germany); Zvonkov, B. N. [The NNSU Physical-Technical Research Institute, Nizhny Novgorod 603950 (Russian Federation)
2014-01-28
In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3 μm at room temperature. We attribute this peak to the direct band gap transitions between Γ-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.
Interband magneto-spectroscopy in InSb square and parabolic quantum wells
Kasturiarachchi, T.; Saha, D.; Pan, X.; Sanders, G. D.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Stanton, C. J.; Santos, M. B.
2015-06-01
We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III-V semiconductors leading to a small effective mass (0.014 m0) and a large g-factor (-51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8 T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.
Improving the variational path integral approach to the quantum double-well potential
International Nuclear Information System (INIS)
Bao Jingdong; Wang Hongyu
2002-01-01
An improved variational path integral approach is developed and applied to the quantum double-well potential, in which part of the quartic term of the potential is included in the trial action. The expression of the effective classical potential (ECP) under a non-Gaussian expectation is obtained. Here the frequency and fourth-order derivative of the potential are treated as two variational parameters, determined by the minimization of the ECP at each point. We calculate the ECP, the free energy and the level splitting of a symmetrical double-well potential. It is shown that the present results are better than those of the Feynman-Kleinert Gaussian variational method. (author)
Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates
Jagannath, C.; Zemon, S.; Norris, P.; Elman, B. S.
1987-10-01
Photoluminescence and photoluminescence excitation spectroscopies are utilized to study excitons in GaAs/AlGaAs quantum wells (QW's) fabricated by molecular beam epitaxy on a GaAs buffer layer grown on a Si substrate. The buffer layer was grown by metalorganic vapor phase epitaxy. The experimental results are understood in terms of a uniform biaxial tension of approximately 3 kbar present in the plane of growth for both the QW's and the GaAs buffer. An important consequence of the biaxial tension is that for QW's with well widths larger than about 15 nm the light-hole and heavy-hole subbands cross each other in energy, resulting in a light-hole exciton energy lower than that of the heavy-hole exciton, opposite to the case of QW's grown on GaAs substrates.
Intersubband spin relaxation mechanism in n-doped[110] GaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
Schmid, Lena; Chen, Shijian; Doehrmann, Stefanie; Oertel, Stefan; Huebner, Jens; Oestreich, Michael [Institute for Solid State Physics, Gottfried Wilhelm Leibniz University Hannover, Appelstr. 2, 30167 Hannover (Germany); Schuh, Dieter; Wegscheider, Werner [Institute of Experimental and Applied Physics, University of Regensburg, Universitaetsstrasse 31, 93040 Regensburg (Germany)
2008-07-01
The intersubband spin relaxation mechanism most likely represents the major spin dephasing channel in room temperature applications based upon heterostructures in (110) oriented GaAs for spins oriented along the growth direction. The electron spin relaxation time {tau}{sub s} in n-doped (110)GaAs/AlGaAs quantum wells is investigated by time- and polarisation-resolved photoluminescence measurements in dependence on the subband energy splitting and subband occupancy. The influence by the subband energy splitting on {tau}{sub s} is deduced from well width dependent measurements, whereas different occupancies are adjusted by different sample temperatures. The n-doping suppresses the spin dephasing influence of holes created by the optical excitation. The (110) structure suppresses the Dyakonov-Perel relaxation mechanism for spins pointing in growth direction. Therefore the resulting spin relaxation times are long even at room temperature and the intersubband spin relaxation mechanism becomes the dominating spin relaxation mechanism.
Quantum-well exciton dipolar interaction: Polarization-dependence and Z-LT splitting
International Nuclear Information System (INIS)
Nguyen Ba An.
1996-12-01
We calculate the exciton dipolar interaction in a semiconductor quantum well. The explicit polarization-dependence, i.e, the dependence on both the exciton dipole moment μ-vector and its inplane wavevector k-vector is derived. The obtained results for the three modes (L, T and Z modes) of the long-range part of the dipolar interaction satisfy the polarization sum rule for any parameters. In the long wavelength limit there is a Z-LT splitting which decreases as the well width increases reflecting a crossover from strict 2D to quasi-2D. A rough crossover from quasi-2D to 3D is also described. (author). 18 refs, 4 figs
(In)GaSb/AlGaSb quantum wells grown on Si substrates
International Nuclear Information System (INIS)
Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki
2007-01-01
We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected
Large g-factor enhancement in high-mobility InAs/AlSb quantum wells
International Nuclear Information System (INIS)
Sadofyev, Yu.G.; Ramamoorthy, A.; Naser, B.; Bird, J.P.; Johnson, S.R.; Zhang, Y.-H.
2002-01-01
We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two-dimensional electron gas realized in the wells exhibits high mobility at low temperatures, and an analysis of its Shubnikov-de Haas oscillations suggests this mobility is limited by scattering from remotely located unintentional dopants. Spin splitting of the oscillations is clearly resolved at 4.2 K, revealing a g-factor as large as -60 at high magnetic fields. The size of this enhancement increases with decreasing electron density, and is thought to reflect the associated increase in the strength of the effective Coulomb interaction
Tests and Analysis of Electromagnetic Models for Semiconductor-Metal Quantum-Well Lasers
Shih, Meng-Mu
2012-03-01
This work tests the proposed electromagnetic models for quantum-well lasers by using several materials of semiconductors and metals. Different combinations of semiconductors and metals can generate various wavelengths and mode-couplings in such semiconductor waveguide structures with built-in metal-gratings. The numerical results of these models are computed by the photonic approach and verified by the optical approach. Even for the weak mode-coupling cases, the numerical results computed by both approaches have close values. Numerical results with post-analysis can summarize how the key parameters, such as grating geometry, well thickness, and layer thickness, affect the mode-couplings. The above results can be further interpreted by physics intuition and fundamental concepts so as to provide insights into the modeling and design of lasers for more applications.
Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen
2017-10-30
We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.
Properties of a charge in the nanoheterosystems with quantum wells and barriers
Directory of Open Access Journals (Sweden)
V.I. Boichuk
2010-01-01
Full Text Available In the paper a quasi-one-dimensional three-layer nanowire (NW with an intermediate layer at the separation boundaries is described by the Kronig-Penney model with δ-function potentials. The distance between the last or supreme atoms of the intermediate layer is a parameter of the problem and ranges from zero to two lattice parameters of crystals. A precise solution is obtained for the quantum-mechanical reflection coefficient R which makes it possible to determine the dependence of the factor on a wave vector, widths of an intermediate layer and a monolayer of the nanoheterostructure. The specific calculations are performed for the GaAs/AlAs/GaAs and AlAs/GaAs/AlAS nanowires. The comparison of the reflection coefficients in the envelope-function approximation and in the effective mass method is performed at small values of a wave vector. It is shown that similar results can be received using the refined procedure, originally proposed by Harrison, with appropriately taken parameters. For the cosinusoidal dependence of the energy on a wave vector which arises in the Kronig-Penney model within the framework of the S-matrix scattering method, we determined the binding states energy for a AlAs/GaAs/AlAs quantum well wire.
Design rules for modulation-doped AlAs quantum wells
Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Kamburov, D.; Shayegan, M.; Pfeiffer, L. N.
2017-07-01
Owing to their multivalley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic transport. Indeed, a plethora of phenomena unseen in other 2DESs have been observed over the past decade. However, a foundation for sample design is still lacking for AlAs 2DESs, limiting the means to achieve optimal quality samples. Here, we present a systematic study on the fabrication of modulation-doped AlAs and GaAs QWs over a wide range of AlxGa1 -xAs barrier alloy compositions. Our data indicate clear similarities in modulation doping mechanisms for AlAs and GaAs, and provide guidelines for the fabrication of very high quality AlAs 2DESs. We highlight the unprecedented quality of the fabricated AlAs samples by presenting the magnetotransport data for low-density (≃1 ×1011cm-2 ) AlAs 2DESs that exhibit high-order fractional quantum Hall signatures.
Majarshin, A. Jalili; Sabri, H.
2018-03-01
It is interesting that a change of nuclear shape may be described in terms of a phase transition. This paper studies the quantum phase transition of the U(5) to SO(6) in the interacting boson model (IBM) on the finite number N of bosons. This paper explores the well-known distinctive signatures of transition from spherical vibrational to γ-soft shape phase in the IBM with the variation of a control parameter. Quantum phase transitions occur as a result of properties of ground and excited states levels. We apply an affine \\widehat {SU(1,1)} approach to numerically solve non-linear Bethe Ansatz equation and point out what observables are particularly sensitive to the transition. The main aim of this work is to describe the most prominent observables of QPT by using IBM in shape coexistence configuration. We calculate energies of excited states and signatures of QPT as energy surface, energy ratio, energy differences, quadrupole electric transition rates and expectation values of boson number operators and show their behavior in QPT. These observables are calculated and examined for 98 - 102Mo isotopes.
Magnetotransport in uniform and modulated electron gases in wide parabolic quantum wells
International Nuclear Information System (INIS)
Rimberg, A.J.
1992-01-01
This thesis presents a study of electron gases in wide parabolic quantum wells (WPBWs) at temperatures to 5 cm 2 /V s) electron gas is present. Fourier analysis of low-field ( F -E i of the Fermi level from the subband bottoms which are in excellent agreement with results of self-consistent calculations, indicating filling of several periods of a remotely-doped superlattice with high-mobility electron gas. The subband structures of the electron gas in a WPBW without superlattice via capacitance-voltage (CV) profiling were studied by applying a magnetic field in the sample plane to separate features due to subband depopulations from those due to nonuniformities in the gas. The field dependence of the depopulation voltages is in excellent agreement with results of self-consistent calculations. The authors show that the density profile of the gas in the magnetic quantum limit is uniform to ±20%. They have measured magnetoresistance in the same sample for current oriented parallel (R parallel ) and perpendicular (R perpendicular ) to an in-plane field. They identify subband depopulation features in (R perpendicular ) and (R parallel ) via their temperature dependence and through comparison with CV profiling results
Proppe, Andrew H; Quintero-Bermudez, Rafael; Tan, Hairen; Voznyy, Oleksandr; Kelley, Shana O; Sargent, Edward H
2018-02-28
Metal halide perovskites have achieved photovoltaic efficiencies exceeding 22%, but their widespread use is hindered by their instability in the presence of water and oxygen. To bolster stability, researchers have developed low-dimensional perovskites wherein bulky organic ligands terminate the perovskite lattice, forming quantum wells (QWs) that are protected by the organic layers. In thin films, the width of these QWs exhibits a distribution that results in a spread of bandgaps in the material arising due to varying degrees of quantum confinement across the population. Means to achieve refined control over this QW width distribution, and to examine and understand its influence on photovoltaic performance, are therefore of intense interest. Here we show that moving to the ligand allylammonium enables a narrower distribution of QW widths, creating a flattened energy landscape that leads to ×1.4 and ×1.9 longer diffusion lengths for electrons and holes, respectively. We attribute this to reduced ultrafast shallow hole trapping that originates from the most strongly confined QWs. We observe an increased PCE of 14.4% for allylammonium-based perovskite QW photovoltaics, compared to 11-12% PCEs obtained for analogous devices using phenethylammonium and butylammonium ligands. We then optimize the devices using mixed-cation strategies, achieving 16.5% PCE for allylammonium devices. The devices retain 90% of their initial PCEs after >650 h when stored under ambient atmospheric conditions.
Two-dimensional hole systems in indium-based quantum well heterostructures
Energy Technology Data Exchange (ETDEWEB)
Loher, Josef
2016-08-01
The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of InAlAs/InGaAs/InAs:Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate. Within these magnetotransport experiments, a reproducible phenomenon of remarkable robustness emerged in the transverse Hall magnetoresistivity of the indium 2DHG systems which are grown on a special InAlAs step-graded metamorphic buffer layer structure to compensate crystal lattice mismatch. As a consequence of the strain relaxation process, these material systems are characterized by anisotropic properties along different crystallographic directions. We identify a puzzling offset phenomenon in the zero-field Hall magnetoresistance and demonstrate it to be a universal effect in systems with spatially anisotropic transport properties.
DEFF Research Database (Denmark)
Porte, Henrik; van Capel, P.J.S.; Turchinovich, Dmitry
2010-01-01
Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening.......Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening....
Energy Technology Data Exchange (ETDEWEB)
Prudaev, I. A., E-mail: funcelab@gmail.com; Kopyev, V. V.; Romanov, I. S.; Oleynik, V. L. [National Research Tomsk State University (Russian Federation)
2017-02-15
The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulation results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.
Harsh photovoltaics using InGaN/GaN multiple quantum well schemes
Lien, Derhsien
2015-01-01
Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.
Nonlinear optics response of semiconductor quantum wells under high magnetic fields
International Nuclear Information System (INIS)
Chemla, D.S.
1993-07-01
Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW's as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H → ∞. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed
Adatom-induced lateral inhomogeneity of quantum well states in metal multilayers
Schwingenschlögl, Udo
2010-07-13
The influence of Co adatoms on the quantum well states (QWSs) existing in Cu/Co(100) multilayers is investigated by means of ab initio calculations. The typical oscillations of the density of states at the Fermi level as a function of the number of Cu layers are found to be strongly perturbed by the presence of adatoms on the surface. In a lateral direction, the QWSs exhibit atomic-scale variations, which depend on the number of Cu layers. These results suggest that the phase accumulation model, which is often used for analyzing QWS, is not sufficient to interpret electronic features near adatoms and call for experimental real-space investigations of QWS.
Anisotropy of exciton spectrum and spin-orbit interactions in quantum wells in tilted magnetic field
International Nuclear Information System (INIS)
Olendski, Oleg; Shahbazyan, Tigran V
2006-01-01
We study theoretically excitonic energy spectrum and optical absorption in narrowgap semiconductor quantum wells in strong magnetic field. We show that, in the presence of an in-plane field component, the absorption coefficient exhibit a double-peak structure due to hybridization of bright and dark excitons. If both Rashba and Dresselhaus spin-orbit terms are present, the spectrum is anisotropic in in-plane field orientation with respect to [100] axis. In particular, the magnitude of the splitting can be tuned in a wide interval by varying the azimuthal angle of the in-plane field. The absorption spectrrum anisotropy would allow simultaneous measurement Dresselhaus and Rashba spin-orbit coefficients
Anomalously large spin susceptibility enhancement in n-doped CdMnTe quantum wells
Energy Technology Data Exchange (ETDEWEB)
Ben Cheikh, Z. [Laboratoire Charles Coulomb, UMR 5221, Département Semi-conducteurs, Matériaux et Capteurs, Université Montpellier 2, France and Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté (Tunisia); Cronenberger, S.; Vladimirova, M.; Scalbert, D. [Laboratoire Charles Coulomb, UMR 5221, Departement Semi-conducteurs, Materiaux et Capteurs, Universite Montpellier 2 (France); Boujdaria, K. [Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Zarzouna (Tunisia); Baboux, F.; Perez, F. [Institut des NanoSciences de Paris, CNRS/Université Paris 6, 4 place Jussieu, F-75005 Paris (France); Wojtowicz, T.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)
2013-12-04
We report on time-resolved Kerr rotation (TRKR) experiments done on n-doped CdMnTe quantum wells (QWs), in the regime where strong coupling between the electron and the Mn spin-flip excitations shows up. It has been proposed previously to deduce the 2D electron gas spin susceptibility from the coupling energy between these spin excitations. Here we measure the coupling energy on a high mobility sample down to very low excitation density, and compare the results with spin-flip Raman scattering (SFRS) on the same sample. The electron spin polarizations measured by TRKR and SFRS are found in relatively good agreement. However the spin susceptibility measured by TRKR exceeds systematically the values predicted by many-body theory. This could be an indication that the two-oscillator model used to describe mixed electron-Mn spin excitations needs to be improved.
Chen, Aixi
2014-11-03
In triple coupled semiconductor quantum well structures (SQWs) interacting with a coherent driving filed, a coherent coupling field and a weak probe field, spontaneous emission spectra are investigated. Our studies show emission spectra can easily be manipulated through changing the intensity of the driving and coupling field, detuning of the driving field. Some interesting physical phenomena such as spectral-line enhancement/suppression, spectral-line narrowing and spontaneous emission quenching may be obtained in our system. The theoretical studies of spontaneous emission spectra in SQWS have potential application in high-precision spectroscopy. Our studies are based on the real physical system [Appl. Phys. Lett.86(20), 201112 (2005)], and this scheme might be realizable with presently available techniques.
The suitability of SiGe multiple quantum well modulators for short reach DWDM optical interconnects.
Kekatpure, Rohan D; Lentine, Anthony
2013-03-11
We describe calculations that address the suitability at using silicon-germanium multiple quantum well (MQW) modulators in dense wavelength division multiplexed (DWDM) short reach optical interconnects that vary over a significant temperature range. Our calculations indicate that there is a tradeoff between the number of channels, the temperature range and laser power required. Twenty to forty DWDM channels at 100 GHz and 50 GHz channel spacing is possible in DWDM links with a ~ 12° temperature range with less than a 1 dB laser power penalty compared to the optimum single channel, single temperature case. The same number of channels can be operated over a wider 37° temperature range with laser power penalties of 3 dB. It shows that, even for DWDM systems, silicon-germanium modulators might provide an alternative to ring and disk resonant modulators without the need for stringent (< 1 °C) temperature control.
Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene.
Yu, Young-Jun; Kim, Keun Soo; Nam, Jungtae; Kwon, Se Ra; Byun, Hyeryoung; Lee, Kwanjae; Ryou, Jae-Hyun; Dupuis, Russell D; Kim, Jeomoh; Ahn, Gwanghyun; Ryu, Sunmin; Ryu, Mee-Yi; Kim, Jin Soo
2015-02-11
Resonance energy transfer (RET) has been employed for interpreting the energy interaction of graphene combined with semiconductor materials such as nanoparticles and quantum-well (QW) heterostructures. Especially, for the application of graphene as a transparent electrode for semiconductor light emitting diodes, the mechanism of exciton recombination processes such as RET in graphene-semiconductor QW heterojunctions should be understood clearly. Here, we characterized the temperature-dependent RET behaviors in graphene/semiconductor QW heterostructures. We then observed the tuning of the RET efficiency from 5% to 30% in graphene/QW heterostructures with ∼60 nm dipole-dipole coupled distance at temperatures of 300 to 10 K. This survey allows us to identify the roles of localized and free excitons in the RET process from the QWs to graphene as a function of temperature.
Magnetospectroscopy of double HgTe/CdHgTe quantum wells
Energy Technology Data Exchange (ETDEWEB)
Bovkun, L. S.; Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Aleshkin, V. Ya.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Ruffenach, S.; Consejo, C.; Teppe, F.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM (France); Orlita, M.; Piot, B.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA (France); Mikhailov, N. N.; Dvoretskii, S. A. [Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-11-15
The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.
Directory of Open Access Journals (Sweden)
Eliermes Arraes Meneses
2005-02-01
Full Text Available Photoluminescence is one of the most used spectroscopy techniques for the study of the optical properties of semiconducting materials and heterostructures. In this work the potentiality of this technique is explored through the investigation and characterization of structural imperfections originated from fluctuations in the chemical composition of ternary and quaternary alloys, from interface roughnesses, and from unintentional compounds formed by the chemical elements intermixing at the interfaces. Samples of GaAs/AlGaAs, GaAsSb/GaAs, GaAsSbN/GaAs and GaAs/GaInP quantum well structures are analyzed to verify the influence of the structural imperfections on the PL spectra
Model of fragmentation of the exciton inner ring in semiconductor quantum wells
Chernyuk, A. A.; Sugakov, V. I.; Tomylko, V. V.
2014-11-01
The appearance of nonhomogeneous structures of the indirect exciton density distribution in the region of the quantum well (in the region of the inner ring) is explained. The structure (the fragmentation) occurs due to the exciton condensed phase formation because of the interaction between excitons. The formation of the struc-ture is related with the nonequalibrity of the system, which is caused by the exciton finite lifetime and the presence of the pumping. The structure emerges in the shape of a set of islands or circles of the condensed phase. The structure type depends on the pumping intensity, the size of the laser spot, and disappears with increasing the temperature. The merging of two structures, created by different laser spots, is investigated at decreasing the distance between the centers of the spots.
Evaluation of electron mobility in InSb quantum wells by means of percentage-impact
International Nuclear Information System (INIS)
Mishima, T. D.; Edirisooriya, M.; Santos, M. B.
2014-01-01
In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature
Aceituno, P.; Hernández-Cabrera, A.
2017-11-01
We study the multistable behavior of the intersubband optical absorption for InSb-based tunnel-coupled quantum wells. We consider four sublevels coming from the splitting of the two deepest levels due to the inversion asymmetry of the structure (Rashba effect), and a weak external in-plane magnetic field (Zeeman effect). Photoexcitation with an intense terahertz pump produces the redistribution of nonequilibrium electrons among the four spin sublevels. The redistribution produces a photoinduced self-consistent potential, giving rise to the renormalization of energy distance between sublevels. Depending on total electron concentration, magnetic field intensity, and pumping efficiency, we find different multistable behaviors in the intersubband optical absorption spectrum. Based on the matrix density, we describe the electron redistribution by means of a system of balance equations for electron concentrations.
Edge states in lateral p -n junctions in inverted-band HgTe quantum wells
Piatrusha, S. U.; Khrapai, V. S.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.; Tikhonov, E. S.
2017-12-01
We investigate lateral p -n junctions, electrostatically defined in 14-nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p -n junction resistances are close to h /2 e2 , consistent with some previous experiments on 8 -10 nm QWs, and the current-voltage characteristics are highly linear, indicating the transport via ballistic helical edge states. Shot noise measurements are performed in order to further verify the underlying transport mechanism. We discuss the role of unknown inelastic relaxation rates in the leads and in the edge channels for the correct interpretation of the noise data. Although the interpretation in favor of the helical edge states seems more consistent, a definite conclusion cannot be drawn based on the present experiment. Our approach looks promising for the study of short quasiballistic edges in topological insulators in suitable geometry.
Yan, Jie-Yun
2017-08-01
The theory of excitonic high-order sideband generation (HSG) in a semiconductor quantum well irradiated by two orthogonal terahertz (THz) fields (one frequency is an integral multiple of the other) is presented. The exact analytical solution to the sideband spectrum is given with the help of the generalized Bessel functions. As a special case, the HSG when the frequencies of these two THz fields are the same is derived and its dependence on the ellipticity of the THz field is discussed. The theory could explain the experiments, especially concerning the sensitive dependence of HSG signals on the ellipticity of the THz field: the signals are strong when the THz field has a linear polarization and totally vanish in case of a circular polarization. More interestingly, it was found that the strongest signal is not produced in the case of linear polarization for some sidebands. The theory is supported by numerical calculations.
Microscopic Modeling of Intersubband Resonances in InAs/AlSb Quantum Wells
Li, Jian-Zhong; Kolokolov, K. I.; Ning, Cun-Zheng; Larrabee, D. C.; Khodaparast, G. A.; Kono, J.; Ueda, K.; Nakajima, Y.; Sasa, S.; Inoue, M.
2003-01-01
Linear absorption spectra from intersubband resonance in InAs/AlSb quantum wells are analyzed theoretically using the intersubband semiconductor Bloch equation approach. Our model goes beyond the Hartree-Fock approximation and treats particle-particle correlations under the second Born approximation. Electron-electron and -LO phonon scatterings from such a treatment describe intrinsic line broadening to the intersubband resonance. Electron subbands are determined self-consistently with a spurious-state-free 8-band k.p Hamiltonian under the envelope function approximation. To compare with experimental measurements, we also included line broadening due to electron-interface roughness scattering. Excellent agreement was achieved for temperature-dependent absorption spectra in the mid-infrared frequency range, after taking into careful account the interplay of material parameters, nonparabolicity in bandstructure, and many-body effects.
High sensitivity Hall devices with AlSb/InAs quantum well structures
International Nuclear Information System (INIS)
Zhang Yang; Zhang Yu-Wei; Wang Cheng-Yan; Guan Min; Cui Li-Jie; Li Yi-Yang; Wang Bao-Qiang; Zhu Zhan-Ping; Zeng Yi-Ping
2013-01-01
AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm 2 · V −1 · s −1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Unusual residual photoconductivity in an InAs/AlSb quantum well
International Nuclear Information System (INIS)
Sadof'ev, Yu.G.; Ramamoorthy, A.; Bird, J.P.; Johnson, S.R.; Zhang, Y-H.
2005-01-01
Some unusual features of the residual photoconductivity in an InAs/AlSb backgate quantum well (QW) are demonstrated. The negative residual photoconductivity allows to reduce the electron concentration in the QW by one full order of magnitude (from 6 x 10 11 cm -2 ). This represents the largest concentration variation reported for this effect. An unexpected bistability in the resistance, when the sample had been exposed to illumination by the visual light, was observed. This is attributed to the role of a thin Ge cap layer, which was deposited prior to lithographic processing, and which appears to induce an additional layer of holes in the GaSb layer from the sequence of Ge/GaSb/AlSb layers situated above the InAs QW [ru
In-redistribution in a GaInN quantum well upon thermal annealing
International Nuclear Information System (INIS)
Hahn, E.; Rosenauer, A.; Gerthsen, D.; Off, J.; Perez-Solorzano, V.; Jetter, M.; Scholz, F.
2002-01-01
A GaInN quantum-well structure with an average In-concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before and after an one-hour annealing treatment at 980 C. Due to the heat treatment, the formation of In-rich clusters with extensions between 10 nm and 100 nm and In-concentrations above 80% was observed. Nevertheless, the PL exhibits a blue shift in the PL-peak energy of about 90 meV compared to the as-grown sample and do not show a significant influence of the In-rich clusters on the emission wavelength. (Abstract Copyright [2002], Wiley Periodicals, Inc.)
Analysis of optical transitions in Zn1-x Cdx Se quantum wells
International Nuclear Information System (INIS)
Diaz A, P.; Melo P, Osvaldo de; Hernandez C, I.; Martin A, J.
1998-01-01
In this work we will address our attention to three different but actual aspects concerning the physics of Zn 1-x Cd x Se/ Zn Se quantum wells (Q Ws). After a brief introduction where the main interest of these structures in the fabrication of blue-green laser and light emitting diodes will be discussed, we will touch first the problem of the band-offsets in Zn 1-x Cd x Se/Zn Se heterostructure. Then we will illustrate how the shape of a Zn 1-x Cd x Se/Zn Se Q W can be found from two measured transition energies in optical experiment. Finally, the main features of the optical transitions in these Q Ws are demonstrated. (Author)
Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Energy Technology Data Exchange (ETDEWEB)
Lopes-Oliveira, V., E-mail: lopes@df.ufscar.br; Herval, L. K. S.; Orsi Gordo, V.; Cesar, D. F.; Godoy, M. P. F. de; Galvão Gobato, Y. [Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo (Brazil); Henini, M. [School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham (United Kingdom); Khatab, A. [School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham (United Kingdom); National Institute of Laser Enhanced Sciences, Cairo University (Egypt); Sadeghi, M.; Wang, S. [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goteborg (Sweden); Schmidbauer, M. [Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin (Germany)
2014-12-21
We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III–V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.
Improved designs of Si-based quantum wells and Schottky diodes for IR detection
International Nuclear Information System (INIS)
Moeen, M.; Kolahdouz, M.; Salemi, A.; Abedin, A.; Östling, M.; Radamson, H.H.
2016-01-01
Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10 20 cm −3 and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K 1/f parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K 1/f = 4.7 × 10 −14 was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.
Improved designs of Si-based quantum wells and Schottky diodes for IR detection
Energy Technology Data Exchange (ETDEWEB)
Moeen, M., E-mail: moeen@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Salemi, A.; Abedin, A.; Östling, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden)
2016-08-31
Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10{sup 20} cm{sup −3} and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K{sub 1/f} parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K{sub 1/f} = 4.7 × 10{sup −14} was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.
Binding energy and dynamics of Be acceptor levels in AlAs/GaAs multiple quantum wells
Halsall, M. P.; Zheng, W. M.; Harrison, P.; Wells, J. P. R.; Steer, M. J.; Orlova, E. E.
2004-01-01
We report an infrared study of the effect of quantum well confinement on the binding energy and dynamics of shallow Be acceptors in both bulk GaAs and a series of delta-doped AlAs/GaAs multiquantum well samples with well thicknesses of 20,15 and 10 nm. Low temperature far-infrared absorption
Coupled electron-hole quantum well structure: mass asymmetry and finite width effects
International Nuclear Information System (INIS)
Moudgil, R K
2006-01-01
We investigate the role of many-body correlations in determining the ground-state behaviour of the coupled electron-hole quantum well structure by including the mass asymmetry and the finite width of wells. The correlations (both the intra- and inter-well) are treated beyond the static local-field theories by employing the dynamical self-consistent mean-field approximation of Hasegawa and Shimizu. The mass asymmetry is seen to introduce a marked change in the ground state of the electron-hole system as compared to the recent corresponding results on the mass-symmetric electron-hole bilayer. First, the critical density for the liquid-Wigner crystal phase transition is greatly enhanced (e.g., by a factor of about 4 for a GaAs/GaAlAs based system). Second, there is a change in the role played by the electron-hole correlations. The Wigner crystal phase is now found to be stable below a critical density only at sufficiently large separation between the wells. The build-up of electron-hole correlations with diminishing inter-well spacing tends to favour the charge-density-wave phase over the Wigner crystal state, with the result that the former always prevails in the sufficiently close approach of wells. This result differs strikingly from the corresponding studies on the mass-symmetric system, since the electron-hole correlations are predicted here to always support, at sufficiently small well spacing, the Wigner crystal phase below a critical density and the charge-density-wave phase at relatively higher densities. Further, we find that the inclusion of the finite width of layers results in lowering of the critical density for Wigner crystallization
International Nuclear Information System (INIS)
Kim, Je Won; Lee, Kyu Han; Hong, Sangsu
2007-01-01
The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents
Directory of Open Access Journals (Sweden)
Mahshid Mokhtarnejad
2017-01-01
Full Text Available This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.
Carrier and Spin Dynamics in Narrow Gap Parabolic Quantum Well Structures
Bhowmick, M.; Merritt, T.; Khodaparast, G. A.; Mishima, T. D.; Santos, M. B.; Saha, D.; Sanders, G. D.; Stanton, C. J.
2011-03-01
Heterostructures with parabolic confinement potentials are important systems to study for many reasons. In a perfect Parabolic Quantum Well (PQW), the subbands are equally spaced and electron-electron interactions are virtually non-existent, allowing coupling of long-wavelength radiation only to the center-of-mass coordinate of the electron system. Narrow band PQW systems are well suited for THz devices because by careful design, one can tune the transition frequency, temperature stability, and narrow-band emission. In our studies, the parabolic confinement was created by an effective parabolic Al compositional gradient inside each well. We studied carrier/spin dynamics in an InSb/AlxIn1 - x Sb multiple- PQW structure using several time resolved differential transmission schemes in the mid-infrared. Our results demonstrate the unique and complex dynamics in InSb heterostructures that can be important for electronic and optoelectronic devices. Supported by: NSF-DMR-0507866, DMR-0520550, DMR-0706313, and NSF-Career Award DMR-0846834.
Acousto-optic modulation of III-V semiconductor multiple quantum wells
International Nuclear Information System (INIS)
Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.
1996-01-01
We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society
International Nuclear Information System (INIS)
Aschenbrenner, T.; Schowalter, M.; Mehrtens, T.; Müller-Caspary, K.; Rosenauer, A.; Fikry, M.; Heinz, D.; Scholz, F.; Tischer, I.; Madel, M.; Thonke, K.; Hommel, D.
2016-01-01
GaN nanotubes with coaxial InGaN quantum wells were analyzed by scanning transmission electron microscopy in order to determine their structural properties as well as the indium distribution across the InGaN quantum wells. For the latter, two process steps are necessary. First, a technique to prepare cross-sectional slices out of the nanotubes has been developed. Second, an existing scanning transmission electron microscopy analysis technique has been extended with respect to the special crystallographic orientation of this type of specimen. In particular, the shape of the nanotubes, their defect structure, and the incorporation of indium on different facets were investigated. The quantum wells preferentially grow on m-planes of the dodecagonally shaped nanotubes and on semipolar top facets while no significant indium signal was found on a-planes. An averaged indium concentration of 6% to 7% was found by scanning transmission electron microscopy analysis and could be confirmed by cathodoluminescence measurements.
Energy Technology Data Exchange (ETDEWEB)
Kojima, Osamu, E-mail: kojima@phoenix.kobe-u.ac.jp; Okumura, Shouhei; Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Akahane, Kouichi [National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795 (Japan)
2014-11-03
We report upconversion photoluminescence (UCPL) in GaAs/AlAs multiple quantum wells. UCPL from the AlAs barrier is caused by the resonant excitation of the excitons in the GaAs well. When the quantum well has sufficient miniband width, UCPL is hardly observed because of the small exciton oscillator strength. The excitation-energy and excitation-density dependences of UCPL intensity show the exciton resonant profile and a linear increase, respectively. These results demonstrate that the observed UCPL caused by the saturated two-step excitation process requires a large number of excitons.
Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields
International Nuclear Information System (INIS)
Herrera, H.; Calderon, A.; Gonzalez de la Cruz, G.
2007-01-01
Full text: Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al x Ga 1-x N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work we solve analytically the Schrodinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)
Advances in research and development homojunction and quantum-well infrared detectors
Francombe, Maurice H
1995-01-01
Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of twenty volumes since 1963. The series contains quality studies of the properties of various thinfilms materials and systems.In order to be able to reflect the development of today''s science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.Key Features* Discusses the latest research about structure, physics, and infrared photoemissive behavior of heavily doped silicon homojunctions and Ge and GaAs-based alloy junctions* Reviews the current status of SiGe/Si quantum wells for infrared detection* Discusses key developments in the gro...
Strain analysis of InGaN/GaN multi quantum well LED structures
Energy Technology Data Exchange (ETDEWEB)
Sebnem Cetin, S.; Kemal Oeztuerk, M.; Oezcelik, S. [Department of Physics, Science Faculty, Gazi University, Ankara (Turkey); Photonics Application and Research Center, Gazi University, Ankara (Turkey); Oezbay, E. [Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering, Bilkent, Ankara (Turkey)
2012-08-15
Five period InGaN/GaN multi quantum well (MQW) light emitting diode (LED) structures were grown by a metalorganic chemical vapor deposition (MOCVD) system on c-plane sapphire. The structural characteristics as a strain-stress analysis of hexagonal epilayers MQWs were determined by using nondestructive high resolution x-ray diffraction (HRXRD) in detail. The strain/stress analysis in AlN, GaN, and InGaN thin films with a variation of the In molar fraction in the InGaN well layers was conducted based on the precise measurement of the lattice parameters. The a- and c-lattice parameters of the structures were calculated from the peak positions obtained by rocking the theta axis at the vicinity of the symmetric and asymmetric plane reflection angles, followed by the in-plane and out-of-plane strains. The biaxial and hydrostatic components of the strain were extracted from the obtained a- and c-direction strains values. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields
Energy Technology Data Exchange (ETDEWEB)
Herrera, H.; Calderon, A. [CICATA-IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico); Gonzalez de la Cruz, G. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)
2006-07-01
Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al{sub x}Ga{sub 1-x}N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)
Theory of g-factor enhancement in narrow-gap quantum well heterostructures
Energy Technology Data Exchange (ETDEWEB)
Krishtopenko, S S; Gavrilenko, V I [Institute for Physics of Microstructures RAS, GSP-105, 603950, Nizhny Novgorod (Russian Federation); Goiran, M, E-mail: gavr@ipm.sci-nnov.ru, E-mail: michel.goiran@lncmi.cnrs.fr [Laboratoire National des Champs Magnetiques Intenses (LNCMI-T), CNRS UPR 3228 Universite de Toulouse, 143 Avenue de Rangueil, F-31400 Toulouse (France)
2011-09-28
We report on the study of the exchange enhancement of the g-factor in the two-dimensional (2D) electron gas in n-type narrow-gap semiconductor heterostructures. Our approach is based on the eight-band k{center_dot}p Hamiltonian and takes into account the band nonparabolicity, the lattice deformation, the spin-orbit coupling and the Landau level broadening in the {delta}-correlated random potential model. Using the 'screened' Hartree-Fock approximation we demonstrate that the exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to the conduction band nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and the shape of the g-factor oscillations are determined by both the screening of the electron-electron interaction and the Landau level width. The 'enhanced' g-factor values calculated for the 2D electron gas in InAs/AlSb quantum well heterostructures are compared with our earlier experimental data and with those obtained by Mendez et al (1993 Phys. Rev. B 47 13937) in magnetic fields up to 30 T. (paper)
Doping-Induced Interband Gain in InAs/AlSb Quantum Wells
Kolokolov, K. I.; Ning, C. Z.
2005-01-01
A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.
Modelling of a diode laser with a resonant grating of quantum wells and an external mirror
International Nuclear Information System (INIS)
Vysotskii, D V; Elkin, N N; Napartovich, A P; Kozlovskii, Vladimir I; Lavrushin, B M
2011-01-01
A three-dimensional numerical model of a diode laser with a resonant grating of quantum wells (QWs) and an external mirror is developed and used to calculate diode laser pulses that are long compared to the time of reaching a stationary regime and are short enough to neglect heating of the medium. The consistent solutions of the Helmholtz field equation and the system of diffusion equations for inversion in each QW are found. A source of charge carriers can be both an electron beam and a pump laser beam. The calculations yielded the longitudinal and radial profiles of the generated field, as well as its wavelength and power. The effective threshold pump current is determined. In the created iteration algorithm, the calculation time linearly increases with the number of QWs, which allows one to find the characteristics of lasers with a large number of QWs. The output powers and beam divergence angles of a cylindrical laser are calculated for different cavity lengths and pump spot radii. After calculating the fundamental mode characteristics, high-order modes were additionally calculated on the background of the frozen carrier distributions in the QW grating. It is shown that all the competing modes remain below the excitation threshold for the pump powers used in the experiment. The calculated and experimental data for the case of pumping by a nanosecond electron beam are qualitatively compared.
Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing
Sun, Yijun; Cheng, Zhiyuan; Zhou, Qiang; Sun, Ying; Sun, Jiabao; Liu, Yanhua; Wang, Meifang; Cao, Zhen; Ye, Zhi; Xu, Mingsheng; Ding, Yong; Chen, Peng; Heuken, Michael; Egawa, Takashi
2018-02-01
The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.
Effect of hydrogen on properties of diode structures with Pd/GaAs/InGaAs quantum wells
Karpovich, I A; Shobolov, E L; Zvonkov, B N
2002-01-01
The effect of hydrogen on the photoelectric properties and on the photoluminescence of the Pd/GaAs/InGaAs quantum well diode structures was investigated. The effect of the GaAs anodic oxide thickness on the structure parameters was found and its optimal thickness for the hydrogen sensors was determined. The essential importance of the metal bridges in the thin oxide layers for the current voltage characteristic was established. It was shown that quantum wells increase the sensitivity of the structures to hydrogen. The defect formation during the deposition of the Pd electrode on the natural and anodized GaAs surface was investigated using the quantum wells as the local defect probes. The possibility of the hydrogen passivation of the defects in the diode structures by introduction of the atomic hydrogen through the Pd electrode in a molecular hydrogen atmosphere was proved
Tonkikh, A A; Polyakov, N K; Tsyrlin, G E; Kryzhanovskaya, N V; Sizov, D S; Ustinov, V M
2002-01-01
The possibility of obtaining the long-wave photoluminescence (up to 1.65 mu m at the room temperature) from the InGaAs/GaAs heterostructures is demonstrated. These structures are obtained through the method of the low-temperature molecular beam epitaxy on the basis of two approaches: growth of the InAs quantum points at the low growth rate and growth of the In sub 0 sub . sub 5 Ga sub 0 sub . sub 5 As quantum wells under the conditions of the III group elements excess
Faltermeier, P.; Budkin, G. V.; Unverzagt, J.; Hubmann, S.; Pfaller, A.; Bel'kov, V. V.; Golub, L. E.; Ivchenko, E. L.; Adamus, Z.; Karczewski, G.; Wojtowicz, T.; Popov, V. V.; Fateev, D. V.; Kozlov, D. A.; Weiss, D.; Ganichev, S. D.
2017-04-01
We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1 /B oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near-field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results.
Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.
2018-02-01
The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.
Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs
Energy Technology Data Exchange (ETDEWEB)
Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)
2013-11-15
The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.
Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)
2013-05-15
GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.
DEFF Research Database (Denmark)
Zhukov, A. E.; Asryan, L. V.; Shernyakov, Yu. M.
2012-01-01
The temperature sensitivity of the threshold-current density in quantum-well lasers is studied and the factors affecting the characteristic temperature and its dependence on optical losses are analyzed. It is shown that the inclusion of asymmetric potential barriers (one barrier on each side...... of the quantum well), which prevent the formation of bipolar carrier population in the waveguide region and lead to weakening of the temperature dependences of the transparency-current density, the gain-saturation parameter and, consequently, to a higher characteristic temperature for both long- and short...
International Nuclear Information System (INIS)
García-Ravelo, J.; Trujillo, A. L.; Schulze-Halberg, A.
2012-01-01
We obtain explicit formulas for perturbative corrections of the infinite quantum well model. The formulas we obtain are based on a class of matrix elements that we construct by means of two-parameter ladder operators associated with the infinite quantum well system. Our approach can be used to construct solutions to Schrödinger-type equations that involve generalized harmonic perturbations of their potentials, such as cosine powers, Fourier series, and more general functions. As a particular case, we obtain characteristic values for odd periodic solutions of the Mathieu equation.
Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
Directory of Open Access Journals (Sweden)
Li Shu-Shen
2008-01-01
Full Text Available Abstract The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.
Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode
Energy Technology Data Exchange (ETDEWEB)
Alias, M S; Maskuriy, F; Faiz, F; Mitani, S M [Advanced Physical Technologies Laboratory, Telekom Malaysia Research and Development (TMR and D), Lingkaran Teknokrat Timur, 63000 Cyberjaya, Selangor (Malaysia); AL-Omari, A N [Electronic Engineering Department, Hijjawi Faculty for Engineering Technology, Yarmouk University, Irbid 21163 (Jordan)
2013-11-30
We report optimisation of optical properties of a strained GaInNAs/GaAs quantum-well laser, by taking into account the many-body effect theory and the bowing parameter. The theoretical transition energies and the GaInNAs bowing parameter are fitted into the photoluminescence spectrum of the GaInNAs quantum well, obtained in the experiment. The theoretical results for the photoluminescence spectrum and laser characteristics (light, current and voltage) exhibits a high degree of agreement with the experimental results. (lasers)
Topological phase transitions in an inverted InAs/GaSb quantum well driven by tilted magnetic fields
Hsu, Hsiu-Chuan; Jhang, Min-Jyun; Chen, Tsung-Wei; Guo, Guang-Yu
2017-05-01
The helical edge states in a quantum spin Hall insulator are presumably protected by time-reversal symmetry. However, even in the presence of magnetic field which breaks time-reversal symmetry, the helical edge conduction can still exist, dubbed as pseudo quantum spin Hall effect. In this paper, the effects of the magnetic fields on the pseudo quantum spin Hall effect and the phase transitions are studied. We show that an in-plane magnetic field drives a pseudo quantum spin Hall state to a metallic state at a high field. Moreover, at a fixed in-plane magnetic field, an increasing out-of-plane magnetic field leads to a reentrance of pseudo quantum spin Hall state in an inverted InAs/GaSb quantum well. The edge state probability distribution and Chern numbers are calculated to verify that the reentrant states are topologically nontrivial. The origin of the reentrant behavior is attributed to the nonmonotonic bending of Landau levels and the Landau level mixing caused by the orbital effect induced by the in-plane magnetic field. The robustness to disorder is demonstrated by the numerically calculated quantized conductance for disordered nanowires within Landauer-Büttiker formalism.
Acoustically induced spin transport in (110)GaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
Couto, Odilon D.D. Jr.
2008-09-29
In this work, we employ surface acoustic waves (SAWs) to transport and manipulate optically generated spin ensembles in (110) GaAs quantum wells (QWs). The strong carrier confinement into the SAW piezoelectric potential allows for the transport of spin-polarized carrier packets along well-defined channels with the propagation velocity of the acoustic wave. In this way, spin transport over distances exceeding 60 m is achieved, corresponding to spin lifetimes longer than 20 ns. The demonstration of such extremely long spin lifetimes is enabled by three main factors: (i) Suppression of the D'yakonov-Perel' spin relaxation mechanism for z-oriented spins in (110) IIIV QWs; (ii) Suppression of the Bir-Aronov-Pikus spin relaxation mechanism caused by the type-II SAW piezoelectric potential; (iii) Suppression of spin relaxation induced by the mesoscopic carrier confinement into narrow stripes along the SAW wave front direction. A spin transport anisotropy under external magnetic fields (B{sub ext}) is demonstrated for the first time. Employing the well-defined average carrier momentum impinged by the SAW, we analyze the spin dephasing dynamics during transport along the [001] and [1 anti 10] in-plane directions. For transport along [001], fluctuations of the internal magnetic field (B{sub int}), which arises from the spin-orbit interaction associated with the bulk inversion asymmetry of the crystal, lead to decoherence within 2 ns as the spins precess around B{sub ext}. In contrast, for transport along the [1 anti 10] direction, the z-component of the spin polarization is maintained for times one order of magnitude longer due to the non-zero average value of B{sub int}. The dephasing anisotropy between the two directions is fully understood in terms of the dependence of the spin-orbit coupling on carrier momentum direction, as predicted by the D'yakonov-Perel' mechanism for the (110) system. (orig.)
Khan, Mohammed Zahed Mustafa
2013-10-01
We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. © 2013 Optical Society of America.
Coulomb drag: a probe of electron interactions in coupled quantum wells
DEFF Research Database (Denmark)
Jauho, Antti-Pekka
1996-01-01
As semiconductor devices shrink in size and in dimensionality, interactions between charge carriers become more and more important. There is a simple physical reason behind this behavior: fewer carriers lead to less effective screening, and hence stronger effective interactions. A point in case...... are one-dimensional systems (quantum wires): there electron-electron interactions may lead to a behavior, which is qualitatively different from the standard Fermi liquid picture (Luttinger liquids). Electron-electron interactions also play a central role in the fractional quantum Hall effect, which...... be the study of quantum wires: there the interactions may lead to even more dramatic effects...
Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate
International Nuclear Information System (INIS)
Park, Y.M.; Andre, R.; Kasprzak, J.; Dang, Le Si; Bellet-Amalric, E.
2007-01-01
We have grown zinc-blende cadmium selenide (CdSe) epilayers on ZnTe-(0 0 1) substrate by molecular beam epitaxy (MBE). By controlling the substrate temperature and beam-equivalent pressure (BEP) ratio, of Se to Cd, we determined the most suitable growth condition based on reflection high-energy electron diffraction (RHEED) pattern. At a substrate temperature of 280 deg. C and a BEP ratio of 3.6, the RHEED pattern showed a V-like feature, indicating a rough surface with facets. As the substrate temperature was increased to 360 deg. C at the same BEP ratio, a V-like RHEED pattern moved to a clear streaky pattern. Moreover when the BEP ratio was increased to 4.8 at 360 deg. C of substrate temperature, a clear (2 x 1) reconstruction of the CdSe layer was observed. A CdSe/CdMgSe single quantum well structure was also grown on ZnTe-(0 0 1) substrate by MBE. The RHEED pattern showed a clear (2 x 1) surface reconstruction during the growth. By photoluminescence measurement, a good optical property of the structure was obtained
Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
International Nuclear Information System (INIS)
Carrere, H; Marie, X; Barrau, J; Amand, T; Bouzid, S Ben; Sallet, V; Harmand, J-C
2004-01-01
We have calculated the band structure of InGaAsN/GaAs(N)/GaAs compressively strained quantum wells (QW) emitting at 1.3 μm using the band anticrossing model and an eight-band kp Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent, photoluminescence and excitation of photoluminescence spectroscopy experiments and measured laser characteristics extracted from the recent literature. Because of the high compressive strain in the QW, strain-compensated structures may be required in order to grow stable multiple QWs; in view of this we have studied the band structure of InGaAsN/GaAsP/GaAs QWs emitting at 1.3 μm. Dilute nitride structures also offer the possibility of growing tensile strained QW lasers on InP substrate emitting in the 1.55 μm emission wavelength range. In order to evaluate the potentialities of such structures we have determined the band characteristics of InGaAsN/InGaAsP/InP heterostructures with a TM polarized fundamental transition
Directory of Open Access Journals (Sweden)
Faten A. Chaqmaqchee
2016-04-01
Full Text Available III-V semiconductors components such as Gallium Arsenic (GaAs, Indium Antimony (InSb, Aluminum Arsenic (AlAs and Indium Arsenic (InAs have high carrier mobilities and direct energy gaps. This is making them indispensable for today’s optoelectronic devices such as semiconductor lasers and optical amplifiers at 1.3 μm wavelength operation. In fact, these elements are led to the invention of the Gallium Indium Nitride Arsenic (GaInNAs, where the lattice is matched to GaAs for such applications. This article is aimed to design dilute nitride GaInNAs quantum wells (QWs enclosed between top and bottom of Aluminum (Gallium Arsenic Al(GaAs distributed bragg mirrors (DBRs using MATLAB® program. Vertical cavity semiconductor optical amplifiers (VCSOAs structures are based on Fabry Perot (FP method to design optical gain and bandwidth gain to be operated in reflection and transmission modes. The optical model gives access to the contact layer of epitaxial structure and the reflectivity for successive radiative modes, their lasing thresholds, emission wavelengths and optical field distributions in the laser cavity.
Barrier potential design criteria in multiple-quantum-well-based solar-cell structures
Mohaidat, Jihad M.; Shum, Kai; Wang, W. B.; Alfano, R. R.
1994-01-01
The barrier potential design criteria in multiple-quantum-well (MQW)-based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schroedinger equation. The energy efficiency of solar cells based on the InAs/Ga(y)In(1-y)As and GaAs/Al(x)Ga(1-x)As MQW structues were compared when carriers are excited at a particular solar-energy band. Using InAs/Ga(y)In(1-y)As MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/Al(x)Ga(1-x)As MQW-structure-based solar cells.
Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems
International Nuclear Information System (INIS)
Hu, Y.-J.; Huang, Y.-W.; Fang, C.-H.; Wang, J.-C.; Chen, Y.-F.; Nee, T.-E.
2010-01-01
The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.
Lu, Dylan; Qian, Haoliang; Wang, Kangwei; Shen, Hao; Wei, Feifei; Jiang, Yunfeng; Fullerton, Eric E; Yu, Paul K L; Liu, Zhaowei
2018-03-07
Semiconductor quantum well (QW) light-emitting diodes (LEDs) have limited temporal modulation bandwidth of a few hundred MHz due to the long carrier recombination lifetime. Material doping and structure engineering typically leads to incremental change in the carrier recombination rate, whereas the plasmonic-based Purcell effect enables dramatic improvement for modulation frequency beyond the GHz limit. By stacking Ag-Si multilayers, the resulting hyperbolic metamaterials (HMMs) have shown tunability in the plasmonic density of states for enhancing light emission at various wavelengths. Here, nanopatterned Ag-Si multilayer HMMs are utilized for enhancing spontaneous carrier recombination rates in InGaN/GaN QWs. An enhancement of close to 160-fold is achieved in the spontaneous recombination rate across a broadband of working wavelengths accompanied by over tenfold enhancement in the QW peak emission intensity, thanks to the outcoupling of dominating HMM modes. The integration of nanopatterned HMMs with InGaN QWs will lead to ultrafast and bright QW LEDs with a 3 dB modulation bandwidth beyond 100 GHz for applications in high-speed optoelectronic devices, optical wireless communications, and light-fidelity networks. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure
Riuttanen, L.; Kivisaari, P.; Svensk, O.; Vasara, T.; Myllys, P.; Oksanen, J.; Suihkonen, S.
2015-03-01
Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a III-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at diferent growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.
Nitride based quantum well light-emitting devices having improved current injection efficiency
Energy Technology Data Exchange (ETDEWEB)
Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald
2014-12-09
A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.
Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers
Energy Technology Data Exchange (ETDEWEB)
Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S; Behymer, E M
2007-01-03
In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.
Disorder dependence of helical edge states in HgTe/CdTe quantum wells
International Nuclear Information System (INIS)
Chen Liang; Liu Qin; Lin Xulin; Zhang Xiaogang; Jiang, Xunya
2012-01-01
In recent years, extensive attention has been focused on a new topological phase induced by nonmagnetic disorder, known as the topological Anderson insulator (TAI). In this work, we study the disorder strength dependence of the edge states in TAI phase in disordered HgTe/CdTe quantum wells. It is shown clearly that the disorder-induced edge states appear above a critical disorder strength after a gap-closing phase transition. These edge states are then found to decline with an increase of disorder strength in a stepwise pattern due to the finite-width effect, where the opposite edges couple to each other through the localized bulk states. This is in sharp contrast with the localization of the edge states themselves by time-reversal symmetry breaking. The size-independent phase boundaries are further obtained through scaling analysis, where a metallic phase is found separating two topologically distinct phases, which is due to the Fermi energy and mass renormalization. (paper)
Residual photoconductivity spectra in InAs/AlSb quantum well heterostructures
International Nuclear Information System (INIS)
Aleshkin, V.Ya.; Gavrilenko, V.I.; Gaponova, D.M.; Ikonnikov, A.V.; Marem'yanin, K.V.; Morozov, S.V.; Sadof'ev, Yu.G.; Johnson, S.R.; Zhang, Y.-H.
2005-01-01
The residual photoconductivity in AlSb/InAs/AlSb heterostructures with two-dimensional electron gas in InAs quantum wells has been investigated at T = 4.2 K. At the excitation by IR radiation ℎω = 0.6-1.2 eV the positive residual conductivity has been observed, the effect being related to the photoionization of deep donors. At shorter wavelengths a negative residual photoconductivity is observed resulting from the band-gap excitation of electron-hole pairs and subsequent separation of electron and holes by the built-in electric field, the electron capture by ionized donors and the hole recombination with two-dimensional electrons in InAs. At ℎω > 3.1 eV the abrupt drop of negative photoconductivity has been discovered. This effect is attributed to the switching-on a new channel of photoionization of deep donors in AlSb due to electron transitions into the energy band above the conduction one [ru
Interband and intraband relaxation dynamics in InSb based quantum wells
Bhowmick, M.; Khodaparast, G. A.; Mishima, T. D.; Santos, M. B.; Saha, D.; Sanders, G.; Stanton, C. J.
2016-12-01
We utilize pump/probe spectroscopy to determine the interband and intraband relaxation dynamics in InSb based quantum wells. Using non-degenerate pump/probe techniques, we observed several time scales for relaxation. One time scale τ3 ranging from 2 ps to 5 ps is due to the intraband relaxation dynamics. Here, both the emission of LO phonons (within the Γ valley) and carrier scattering between the X, L, and Γ valleys contribute to the relaxation. An observed longer relaxation time, τ2 ≈ 20 ps, is attributed to electron-hole recombination across the gap (the interband relaxation time). Finally, using a mid-infrared (MIR) degenerate pump/probe scheme, we observed a very fast relaxation time of ˜1 ps, which is due to the saturation of the band-to-band absorption. Our results are important for developing concepts for InSb devices operating in the THz or MIR optical ranges with the endless need for faster response.
Energy Technology Data Exchange (ETDEWEB)
Growden, Tyler A.; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Brown, E. R.; Zhang, Weidong [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States); Droopad, Ravi [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)
2015-10-12
An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.
2 D electron transport in selectively doped Ga As/Inx Ga1-x As multiple quantum well structures
International Nuclear Information System (INIS)
Kulbachinskii, V.A.; Kytin, V.G.; Babushkina, T.S.; Malkina, I.G.
1996-01-01
Photoluminescence, temperature dependence of conductivity (0.4 x Ga 1-x As multiple quantum well (MQW) structures were investigated. The dependence of electron mobility on the width of the quantum wells and temperature were measured. It was shown that in narrow MQW structures the value of mobility is restricted by interface roughness scattering. In wider MQW structures neither interface roughness scattering nor change impurity scattering can describe the values and temperature dependence of mobility. Negative magnetoresistance was observed. From detailed comparison between theory of weak localization and experiment the relaxation time of the wave function phase τ ψ and temperature dependence of τ ψ were evaluated. Quantum Hall effect was investigated in all samples at T=0.4-4.2 K in magnetic fields up to 40 T. (author). 9 refs., 5 figs., 1 tab
2012-01-01
We investigate multiple quantum well [MQW] structures with charge control layers [CCLs] to produce highly efficient blue phosphorescent organic light-emitting diodes [PHOLEDs]. Four types of devices from one to four quantum wells are fabricated following the number of CCLs which are mixed p- and n-type materials, maintaining the thickness of the emitting layer [EML]. Remarkably, such PHOLED with an optimized triplet MQW structure achieves maximum luminous and external quantum efficiency values of 19.95 cd/A and 10.05%, respectively. We attribute this improvement to the efficient triplet exciton confinement effect and the suppression of triplet-triplet annihilation which occurs within each EML. It also shows a reduction in the turn-on voltage from 3.5 V (reference device) to 2.5 V by the bipolar property of the CCLs. PMID:22221777
Trapping of quantum particles and light beams by switchable potential wells
Sonkin, Eduard; Malomed, Boris A.; Granot, Er'El; Marchewka, Avi
2010-09-01
We consider basic dynamical effects in settings based on a pair of local potential traps that may be effectively switched on and off, or suddenly displaced, by means of appropriate control mechanisms, such as scanning tunneling microscopy or photo-switchable quantum dots. The same models, based on the linear Schrödinger equation with time-dependent trapping potentials, apply to the description of optical planar systems designed for the switching of trapped light beams. The analysis is carried out in the analytical form, using exact solutions of the Schrödinger equation. The first dynamical problem considered in this work is the retention of a particle released from a trap which was suddenly turned off, while another local trap was switched on at a distance—immediately or with a delay. In this case, we demonstrate that the maximum of the retention rate is achieved at a specific finite value of the strength of the new trap, and at a finite value of the temporal delay, depending on the distance between the two traps. Another problem is retrapping of the bound particle when the addition of the second trap transforms the single-well setting into a double-well potential (DWP). In that case, we find probabilities for the retrapping into the ground or first excited state of the DWP. We also analyze effects entailed by the application of a kick to a bound particle, the most interesting one being a kick-induced transition between the DWP’s ground and excited states. In the latter case, the largest transition probability is achieved at a particular strength of the kick.
Energy Technology Data Exchange (ETDEWEB)
McKerracher, Ian; Fu Lan; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
2012-12-01
Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiO{sub x}N{sub y} films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.
Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
International Nuclear Information System (INIS)
Mehnke, Frank; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
2014-01-01
The design and Mg-doping profile of AlN/Al 0.7 Ga 0.3 N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm 2
Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells
DEFF Research Database (Denmark)
Kopylov, Oleksii; Shirazi, Roza; Svensk, O.
2012-01-01
We have studied optical properties of single In0.1Ga0.9N quantum wells with GaN barriers in close proximity to the wafer surface (<10 nm). We have found that at room temperature a balance of radiative, non-radiative recombination and complex surface states effects results in an optimum cap thickn...
DEFF Research Database (Denmark)
Turchinovich, Dmitry; Porte, Henrik; Cooke, David
2010-01-01
We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombin...
DEFF Research Database (Denmark)
Dery, H.; Tromborg, Bjarne; Eisenstein, G.
2003-01-01
We describe a theoretical model for carrier-carrier scattering in an inverted semiconductor quantum well structure using a multisubband diagram. The model includes all possible nonvanishing interaction terms within the static screening approximation, and it enables one to calculate accurately...
van Capel, P.J.S.; Turchinovich, D.; Porte, H.P.; Lahmann, S.; Rossow, U.; Dijkhuis, J.I.
2011-01-01
We investigate acoustic and electromagnetic emission from optically excited strained piezoelectric In0.2Ga0.8N/GaN multiple quantum wells (MQWs), using optical pump-probe spectroscopy, time-resolved Brillouin scattering, and THz emission spectroscopy. A direct comparison of detected acoustic signals
High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice
Chen, C.; Holmes, S. N.; Farrer, I.; Beere, H. E.; Ritchie, D. A.
2018-03-01
InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V‑1 s‑1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm‑1 that dominates the polar-optical mode scattering from ∼70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.
Kihara Rurimo, G.; Schardt, M.; Quabis, S.; Malzer, S.; Dotzler, C.; Winkler, A.; Leuchs, G.; Döhler, G.H.; Driscoll, D.; Hanson, M.; Gossard, A.C.; Pereira, S.F.
2006-01-01
We report a method to measure the electric energy density of longitudinal and transverse electric field components of strongly focused polarized laser beams. We used a quantum well photodetector and exploited the polarization dependent optical transitions of light holes and heavy holes to probe the
Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm
International Nuclear Information System (INIS)
Shterengas, Leon; Liang, Rui; Kipshidze, Gela; Hosoda, Takashi; Belenky, Gregory; Bowman, Sherrie S.; Tober, Richard L.
2014-01-01
The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm 2 at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel junctions followed by InAs/AlSb electron injectors. Devices with densely stacked two and three gain stages and 100-μm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. The experiment showed that the bandwidth of the gain and its rate of increase with current depended strongly on the thickness of AlSb layer separating electron injectors from quantum wells. The possible impact of electron injector interfaces and ionized impurities on the carrier scattering and recombination in the active quantum well is discussed.
Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M
1995-01-01
We have experimentally investigated the electronic transport properties of an AlSb/InAs/AlSb quantum well, where part of the AlSb top layer has been replaced with a superconducting Nb strip. By doing a transmission experiment underneath the Nb strip and comparing the results with a model based on
Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm
Energy Technology Data Exchange (ETDEWEB)
Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Liang, Rui; Kipshidze, Gela; Hosoda, Takashi; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States); Bowman, Sherrie S.; Tober, Richard L. [Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
2014-10-20
The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm{sup 2} at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel junctions followed by InAs/AlSb electron injectors. Devices with densely stacked two and three gain stages and 100-μm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. The experiment showed that the bandwidth of the gain and its rate of increase with current depended strongly on the thickness of AlSb layer separating electron injectors from quantum wells. The possible impact of electron injector interfaces and ionized impurities on the carrier scattering and recombination in the active quantum well is discussed.
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells
International Nuclear Information System (INIS)
Capotondi, F.; Biasiol, G.; Ercolani, D.; Grillo, V.; Carlino, E.; Romanato, F.; Sorba, L.
2005-01-01
The relationship between structural and low-temperature transport properties is explored for In x Al 1 - x As/In x Ga 1 - x As metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m 2 /V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low-temperature transport properties
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Energy Technology Data Exchange (ETDEWEB)
Humphreys, C.J., E-mail: colin.humphreys@msm.cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Griffiths, J.T., E-mail: jg641@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Tang, F., E-mail: ft274@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Oehler, F., E-mail: fabrice.oehler@lpn.cnrs.fr [CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis (France); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Victoria 3800 (Australia); Zheng, C., E-mail: changlin.zheng@monash.edu [Monash Centre for Electron Microscopy, Monash University, Victoria 3800 (Australia); Etheridge, J., E-mail: joanne.etheridge@mcem.monash.edu [Department of Materials Science and Engineering, Monash University, Victoria 3800 (Australia); Martin, T.L., E-mail: tomas.martin@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Bagot, P.A.J., E-mail: paul.bagot@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Moody, M.P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Sutherland, D., E-mail: danny.sutherland@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S., E-mail: stefan.schulz@tyndall.ie [Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork (Ireland); and others
2017-05-15
Highlights: • We have studied the atomic structure of polar and non-polar InGaN quantum wells. • The non-polar (11-20) InGaN quantum wells contain indium-rich clusters, unlike the polar (0001) quantum wells. • The electrons and holes in the quantum wells are localised by different mechanisms. - Abstract: We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20 meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60 meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.
Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters
DEFF Research Database (Denmark)
Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke
2016-01-01
and internal quantum efficiency enhancement for InGaN/GaN quantum-well light-emitters. By fabricating dielectric nano-rod pattern on the GaN surface, an optical coating that improves the light extraction is obtained, and furthermore has a low refractive index which blue-shifts the plasmonic resonance of Ag NPs......Surface plasmon coupling with light-emitters and surface nano-patterning have widely been used separately to improve low efficiency InGaN light-emitting diodes. We demonstrate a method where dielectric nano-patterning and Ag nanoparticles (NPs) are combined to provide both light extraction...
Solar harvesting by a heterostructured cell with built-in variable width quantum wells
Brooks, W.; Wang, H.; Mil'shtein, S.
2018-02-01
We propose cascaded heterostructured p-i-n solar cells, where inside of the i-region is a set of Quantum Wells (QWs) with variable thicknesses to enhance absorption of different photonic energies and provide quick relaxation for high energy carriers. Our p-i-n heterostructure carries top p-type and bottom n-type 11.3 Å thick AlAs layers, which are doped by acceptors and donor densities up to 1019/cm3. The intrinsic region is divided into 10 segments where each segment carries ten QWs of the same width and the width of the QWs in each subsequent segment gradually increases. The top segment consists of 10 QWs with widths of 56.5Å, followed by a segment with 10 wider QWs with widths of 84.75Å, followed by increasing QW widths until the last segment has 10 QWs with widths of 565Å, bringing the total number of QWs to 100. The QW wall height is controlled by alternating AlAs and GaAs layers, where the AlAs layers are all 11.3Å thick, throughout the entire intrinsic region. Configuration of variable width QWs prescribes sets of energy levels which are suitable for absorption of a wide range of photon energies and will dissipate high electron-hole energies rapidly, reducing the heat load on the solar cell. We expect that the heating of the solar cell will be reduced by 8-11%, enhancing efficiency. The efficiency of the designed solar cell is 43.71%, the Fill Factor is 0.86, the density of short circuit current (ISC) will not exceed 338 A/m2 and the open circuit voltage (VOC) is 1.51V.
Ultrafast dynamics of Coulomb correlated excitons in GaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
Mycek, M.A. [Univ. of California, Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.
1995-12-01
The author measures the transient nonlinear optical response of room temperature excitons in gallium arsenide quantum wells via multi-wave mixing experiments. The dynamics of the resonantly excited excitons is directly reflected by the ultrafast decay of the induced nonlinear polarization, which radiates the detected multi-wave mixing signal. She characterizes this ultrafast coherent emission in both amplitude and phase, using time- and frequency-domain measurement techniques, to better understand the role of Coulomb correlation in these systems. To interpret the experimental results, the nonlinear optical response of a dense medium is calculated using a model including Coulomb interaction. She contributes three new elements to previous theoretical and experimental studies of these systems. First, surpassing traditional time-integrated measurements, she temporally resolves the amplitude of the ultrafast coherent emission. Second, in addition to measuring the third-order four-wave mixing signal, she also investigates the fifth-order six-wave mixing response. Third, she characterizes the ultrafast phase dynamics of the nonlinear emission using interferometric techniques with an unprecedented resolution of approximately 140 attoseconds. The author finds that effects arising from Coulomb correlation dominate the nonlinear optical response when the density of excitons falls below 3 {times} 10{sup 11} cm{sup {minus}2}, the saturation density. These signatures of Coulomb correlation are investigated for increasing excitation density to gradually screen the interactions and test the validity of the model for dense media. The results are found to be qualitatively consistent with both the predictions of the model and with numerical solutions to the semiconductor Bloch equations. Importantly, the results also indicate current experimental and theoretical limitations, which should be addressed in future research.
Degradation processes in high power multi-mode InGaAs strained quantum well lasers
Sin, Yongkun; Presser, Nathan; Foran, Brendan; Moss, Steven C.
2009-02-01
Recently, broad-area InGaAs-AlGaAs strained quantum well (QW) lasers have attracted much attention because of their unparalleled high optical output power characteristics that narrow stripe lasers or tapered lasers can not achieve. However, broad-area lasers suffer from poor beam quality and their high reliability operation has not been proven for communications applications. This paper concerns reliability and degradation aspects of broad-area lasers. Good facet passivation techniques along with optimized structural designs have led to successful demonstration of reliable 980nm single-mode lasers, and the dominant failure mode of both single-mode and broadarea lasers is catastrophic optical mirror damage (COMD), which limits maximum output powers and also determines operating output powers. Although broad-area lasers have shown characteristics unseen from singlemode lasers including filamentation, their effects on long-term reliability and degradation processes have not been fully investigated. Filamentation can lead to instantaneous increase in optical power density and thus temperature rise at localized areas through spatial-hole burning and thermal lensing which significantly reduces filament sizes under high power operation, enhancing the COMD process. We investigated degradation processes in commercial MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers at ~975nm with and without passivation layers by performing accelerated lifetests of these devices followed by failure mode analyses with various micro-analytical techniques. Since instantaneous fluctuations of filaments can lead to faster wear-out of passivation layer thus leading to facet degradation, both passivated and unpassivated broad-area lasers were studied that yielded catastrophic failures at the front facet and also in the bulk. Electron beam induced current technique was employed to study dark line defects (DLDs) generated in degraded lasers stressed under different test conditions and focused
Dimitriev, G. S.; Sapega, V. F.; Averkiev, N. S.; Panaiotti, I. E.; Ploog, K. H.
2017-11-01
The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.
Study of electro-optic effect in asymmetrically ramped AlInGaAs multiple quantum well structures
Energy Technology Data Exchange (ETDEWEB)
Sadiq, Muhammad Usman; Peters, Frank H.; Corbett, Brian [Tyndall National Institute, Lee Maltings, Cork (Ireland); Department of Physics, University College Cork, Cork (Ireland); O' Callaghan, James; Roycroft, Brendan; Thomas, Kevin; Pelucchi, Emanuele [Tyndall National Institute, Lee Maltings, Cork (Ireland)
2016-04-15
We investigate the electro-optic properties of two oppositely ramped asymmetric quantum well structures in the AlInGaAs material system. The grading of the bandgap in the quantum wells has been achieved by changing the ratio of Al to Ga in the quaternary alloy during the epitaxial growth. The surface normal photo-response and the Fabry-Perot fringe shift in straight waveguides are compared for both structures as a function of applied voltage at 1550 nm for TE-polarized light. The measurements show a change in the refractive index due to a red shift of the excitonic resonances due to the quantum-confined Stark effect. The 10 quantum well structure with a ramp up of the bandgap in the growth direction leads to the figure of merit of the voltage for a π phase shift, V{sub π} by length, L, V{sub π} x L, of 6 as compared to 7 V . mm in the structure with a ramp in opposite direction. Further investigations show that the reduction in V{sub π} is due to increased absorption at high reverse bias which induces a non-linear phase change. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Tunable narrow emission in ZnS/CdS/ZnS quantum well structures prepared by aqueous route
Kumar, Hitanshu; Kumari, Asha; Singh, Ragini Raj
2017-07-01
ZnS/CdS/ZnS quantum wells (QWs) with tunable narrow emission due to narrow size distribution were successfully synthesized by wet chemical method. QWs give high luminescence and hence important materials for recent nanotechnology applications such as optoelectronics and bioimaging. In this work we put forward a QW structure with extended potential barrier, where electron and holes are confining in the core of ZnS and ZnS/CdS QDs by creating a ZnS/CdS/ZnS potential well like structure. Multilayers break the continuity of structure, which gives the combined advantages of ZnS, CdS and ZnS/CdS. This well like structure of quantum dots gives highest possibility to confine the electron and holes inside core and enhance the optical properties with suitable shell thickness. Structural, morphological and optical properties were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible absorption (UV-vis) and photoluminescence (PL) spectroscopy. Quantum yield of these quantum dot structures was also measured.
Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.
2018-03-01
AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates. The edge emitting laser structures showed optically pumped lasing with threshold power densities in the range of 2 MW cm‑2. The offcut angle of the sapphire substrates as well as the number and the width of the quantum wells were varied while keeping the total thickness of the gain region constant. A larger offcut angle of 0.2° leads to step bunching on the surface as well as Ga accumulation at the steps, but also to an increased inclination of threading dislocations and coalescence boundaries resulting in a reduced dislocation density and thus a reduced laser threshold in comparison to lasers grown on ELO with an offcut of 0.1°. For low losses, samples with fewer QWs exhibited a lower lasing threshold due to a reduced transparency pump power density while for high losses, caused by a higher threading dislocation density, the quadruple quantum well was favorable due to its higher maximum gain.
Coherent Zeeman resonance from electron spin coherence in a mixed-type GaAs/AlAs quantum well.
O'Leary, Shannon; Wang, Hailin; Prineas, John P
2007-03-01
Coherent Zeeman resonance from electron spin coherence is demonstrated in a Lambda-type three-level system, coupling electron spin states via trions. The optical control of electron density that is characteristic of a mixed-type quantum-well facilitates the study of trion formation as well as the effects of many-body interactions on the manifestation of electron spin coherence in the nonlinear optical response.
Li, K. Y.; Shan, Q. S.; Zhu, R. P.; Yin, H.; Lin, Y. Y.; Wang, L. Q.
2015-04-01
The study on the quantum dot quantum well (QDQW) microstructure modified by choosing different ligands containing a sulfhydryl group is of significance because it enables one to regulate photoexcited free charge carriers' (FCCs') transport behaviours in high-quality CdTe/ligand QDs via a self-assembled way. The photoelectron characteristics of ligand-capped CdTe nanoparticles were probed by a combination of surface photovoltaic (SPV) and photoacoustic technologies, supplemented by a computer simulation method of the CASTEP module. The experiment reveals that the D-value ΔEWi obtained by the associated two parameters of the SPV spectroscopy was closely related to the quantum confinement energy in the self-assembled CdTe/CdS/ligand core-shell system. In the paper the D-value was termed the depth of QWs, which were buried in the space charge regions located in the graded-band-gap and on either side of the shell-CdS. Obvious resonance quantum tunnelling may occur in the energy band structure with deep QWs on using certain ligands, resulting in an extended diffusion length of the FCCs on illumination of the photon energy hν >= Eg, core-CdTe, and in a strong SPV response at a specific wavelength region. In addition, the carrier-longitudinal optical phonon interaction is the reciprocal of the carriers' lifetime. The d-frontier orbital in the graded-band-gap plays an important role in both the microstructure and the resonance quantum tunnelling of the QDQW system according to the CASTEP calculations.The study on the quantum dot quantum well (QDQW) microstructure modified by choosing different ligands containing a sulfhydryl group is of significance because it enables one to regulate photoexcited free charge carriers' (FCCs') transport behaviours in high-quality CdTe/ligand QDs via a self-assembled way. The photoelectron characteristics of ligand-capped CdTe nanoparticles were probed by a combination of surface photovoltaic (SPV) and photoacoustic technologies
Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.
Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev
2016-06-27
We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Energy Technology Data Exchange (ETDEWEB)
Bryan, Zachary, E-mail: zabryan@ncsu.edu; Bryan, Isaac; Sitar, Zlatko; Collazo, Ramón [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Xie, Jinqiao; Mita, Seiji [HexaTech, Inc., 991 Aviation Pkwy., Suite 800, Morrisville, North Carolina 27560 (United States)
2015-04-06
The internal quantum efficiency (IQE) of Al{sub 0.55}Ga{sub 0.45}N/AlN and Al{sub 0.55}Ga{sub 0.45}N/Al{sub 0.85}Ga{sub 0.15}N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to undoubtedly distinguish the effect of growth conditions, such as V/III ratio, on the optical quality of AlGaN based MQWs from the influence of dislocations. At a high V/III ratio, a record high IQE of ∼80% at a carrier density of 10{sup 18 }cm{sup −3} was achieved at ∼258 nm. The high IQE was correlated with the decrease of the non-radiative coefficient A and a reduction of midgap defect luminescence, all suggesting that, in addition to dislocations, point defects are another major factor that strongly influences optical quality of AlGaN MQW structures.
Tuning Spin- and Valley-Degeneracies in Multicomponent Quantum Well Transport
Prabhu-Gaunkar, Sunanda
The theme of this thesis is manipulation of spin and valley degeneracies in two-dimensional electron systems (2DES) by locally or globally controlling the energy gaps between the two spin states or multiple valley states. Degeneracies in 2DES can be controlled internally or externally with magnetic, strain, and electrostatic fields. With magneto-transport measurements we can probe these spin and valley energy gaps. Spin degeneracies in quantum wells (QW) can be controlled with magnetic field by changing the tilt angle of the field with respect to the sample. Valley degeneracies can be controlled principally by growing QWs of a certain orientation and width. Furthermore, the valley energies can be controlled externally by applying strain or electrostatic gated devices. We first consider transport signatures of controlled spin degeneracies. Magnetic fields can be used to control spin degeneracies and spin gaps by tuning the tilt angle of the field with respect to the sample plane. These spin dependencies can be observed at different tilt angles by conducting measurements of the longitudinal and Hall resistance. In particular, transport measurements in a Si/SiGe spin-split valley degenerate 2DES demonstrates anomalous rise of the transverse Hall resistance at certain quantized plateaus. With systematic tilted field data we map this anomaly to the longitudinal resistance, and also to directional derivatives of the longitudinal resistance. We also develop a theoretical model for estimating the spin-degenerate and spin-split density of states which we fit using the data on longitudinal resistance. We input the exactly calculated spin gaps at every tilt angle in the edge state model of quantum Hall effect, and we are able to provide a microscopic justification to the experimentally observed anomalous features by introducing a constant energy density of disordered states in our model. We next consider transport signatures of controlled valley degeneracies. Valley
Quantum star-graph analogues of PT-symmetric square wells
Czech Academy of Sciences Publication Activity Database
Znojil, Miloslav
2012-01-01
Roč. 90, č. 12 (2012), s. 1287-1293 ISSN 0008-4204 R&D Projects: GA ČR GAP203/11/1433 Institutional support: RVO:61389005 Keywords : non-Hermitian interactions * exactly solvable models * quantum graphs * equilateral q-pointed star * Robin boundary condition Subject RIV: BE - Theoretical Physics Impact factor: 0.902, year: 2012
Hamada, Hiroki
2017-07-28
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1-11] and [11-1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.
Nonlinear optical susceptibilities in the diffusion modified AlxGa1-xN/GaN single quantum well
Das, T.; Panda, S.; Panda, B. K.
2018-05-01
Under thermal treatment of the post growth AlGaN/GaN single quantum well, the diffusion of Al and Ga atoms across the interface is expected to form the diffusion modified quantum well with diffusion length as a quantitative parameter for diffusion. The modification of confining potential and position-dependent effective mass in the quantum well due to diffusion is calculated taking the Fick's law. The built-in electric field which arises from spontaneous and piezoelectric polarizations in the wurtzite structure is included in the effective mass equation. The electronic states are calculated from the effective mass equation using the finite difference method for several diffusion lengths. Since the effective well width decreases with increasing diffusion length, the energy levels increase with it. The intersubband energy spacing in the conduction band decreases with diffusion length due to built-in electric field and reduction of effective well width. The linear susceptibility for first-order and the nonlinear second-order and third-order susceptibilities are calculated using the compact density matrix approach taking only two levels. The calculated susceptibilities are red shifted with increase in diffusion lengths due to decrease in intersubband energy spacing.
Kudryashov, V E; Turkin, A N; Yunovich, A E; Kovalev, A N; Manyakhin, F I
2001-01-01
Spectra and quantum efficiency of light-emitted diodes based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells have been studied at currents J = 10 sup - sup 6 -10 sup - sup 1 A. Minor differences in quantum efficiency (of +- 10% at J approx = 10 mA) are caused by sufficiently different distribution of effective charges in the space charge region as well as by different role of the tunnel component of current at low voltages. The main peak in spectra near of 2.35-2.36 eV at small current (0.05-0.5 mA) does not depend on the voltage and is explained by radiative transitions in localized states. At J > 1 mA the spectral band 2.36-2.52 eV shifts with gamma current. The band form is described in the 4-parameter model of tail population of two-dimensional energy-level density
Piezoelectric effect in CdTe/CdMnTe and CdTe/CdZnTe quantum wells
International Nuclear Information System (INIS)
Andre, Regis
1994-01-01
Materials with zinc-blende type structure are piezoelectric: any strain along a polar axis generates an electrical polarisation. Strained quantum wells of cubic II-VI or III-V semiconductors, grown along [111] or [112] axis, exhibit a strong built-in piezo-electric field (100 kV/cm for 1% strains). Such structures are very promising for applications to optical modulation, but it is necessary to study first the physical properties of piezoelectric heterostructures before they can be used in optical devices. For this purpose, we have performed an optical study of strained CdTe/CdMnTe or CdTe/CdZnTe quantum wells coherently grown by molecular beam epitaxy on [111] or [112] oriented substrates. Effects of piezoelectric field on optical and electronic properties of quantum wells have been analyzed in terms of the envelop function model, taking into account the effects of biaxial strains for [hhk] growth axis. Moreover, we have proposed an original way of measuring piezoelectric field in strained quantum wells, and we have used this method to show that CdTe exhibits strong non-linearities for piezoelectric field versus strain. This effect has never been mentioned before. We have also performed measurements of the piezoelectric coefficient e14 under high hydrostatic pressure inducing strains up to 2%, which shows that part of the non-linear effect is a volume effect. We have also studied the effects of the piezoelectric field on excitons in quantum wells. The binding energy decreases slightly when the electric field increases, but the oscillator strength, for the fundamental transition, decreases dramatically with the overlap of the envelope wavefunctions of electrons and holes. We have performed a modelization of an exciton in a piezoelectric quantum well using two variational parameters. This model provides an accurate calculation of excitonic absorption. Our experimental and theoretical results are in very good agreement, without any fitting parameters, for a large
DEFF Research Database (Denmark)
Carpintero, G.; Thompson, M. G.; Yvind, Kresten
2011-01-01
Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...
Energy Technology Data Exchange (ETDEWEB)
Li Yingkui, E-mail: liyingkui01@163.com [College of Information, Linyi University, Linyi 276002 (China)
2011-09-15
In this paper, we report a phosphorescent Ir(III) emitter of Ir(acac)(F-BT){sub 2}, where acac=acetylacetonate and F-BT=2-(2-fluorophenyl)benzo[d]thiazole, including its crystal structure, electronic nature, photophysical characteristics, thermal, and electrochemical properties. Data suggest that Ir(acac)(F-BT){sub 2} is a promising emitter with high quantum yield of 0.61 and good thermal stability, along with its proper energy levels for charge carrier transportation. Multiple quantum well (MQW) structured OLEDs using Ir(acac)(F-BT){sub 2} as emitter are also fabricated, and their electroluminescence (EL) are investigated in detail. The optimal EL device with 4,4'-N,N'-dicarbazole-biphenyl as potential well layer shows a maximum luminance of 85,500 cd/cm{sup 2} and a peak current efficiency of 31.5 cd/A, and the efficiency roll-off is efficiently reduced. - Highlights: > A high efficiency phosphorescent Ir(III) emitter is synthesized. > Its structure, nature, and properties are well studied and characterized. > Multiple quantum well structured devices are fabricated. > A maximum current efficiency of 31.5 cd/A is realized. > The efficiency roll-off is efficiently reduced.
Stark effect in finite-barrier quantum wells, wires, and dots
International Nuclear Information System (INIS)
Pedersen, Thomas Garm
2017-01-01
The properties of confined carriers in low-dimensional nanostructures can be controlled by external electric fields and an important manifestation is the Stark shift of quantized energy levels. Here, a unifying analytic theory for the Stark effect in arbitrary dimensional nanostructures is presented. The crucial role of finite potential barriers is stressed, in particular, for three-dimensional confinement. Applying the theory to CdSe quantum dots, finite barriers are shown to improve significantly the agreement with experiments. (paper)
Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods
International Nuclear Information System (INIS)
Wang, Q; Bai, J; Gong, Y P; Wang, T
2011-01-01
Optical investigation has been carried out on InGaN/GaN nanorod structures with different indium compositions, fabricated from InGaN/GaN multiple quantum well (MQW) epitaxial wafers using a self-organized nickel nano-mask and subsequent dry etching techniques. In comparison with the as-grown InGaN/GaN MQWs, the internal quantum efficiencies of the nanorods are significantly improved, in particular, for the green InGaN/GaN nanorods with a high indium composition, the internal quantum efficiency is enhanced by a factor of 8, much larger than the enhancement factor of 3.4 for the blue InGaN/GaN nanorods. X-ray reciprocal space mapping (RSM) measurements have been performed in order to quantitatively evaluate the stain relaxation in the nanorods, demonstrating that the majority of strain in InGaN/GaN MQWs can be relaxed as a result of fabrication into nanorods. The excitation-power-dependent photoluminescence measurements have also clearly shown that a significant reduction in the strain-induced quantum confined stark effect has occurred to the nanorod structures.
Khouri, T; Zeitler, U; Reichl, C; Wegscheider, W; Hussey, N E; Wiedmann, S; Maan, J C
2016-12-16
We report a high-field magnetotransport study of an ultrahigh mobility (μ[over ¯]≈25×10^{6} cm^{2} V^{-1} s^{-1}) n-type GaAs quantum well. We observe a strikingly large linear magnetoresistance (LMR) up to 33 T with a magnitude of order 10^{5}% onto which quantum oscillations become superimposed in the quantum Hall regime at low temperature. LMR is very often invoked as evidence for exotic quasiparticles in new materials such as the topological semimetals, though its origin remains controversial. The observation of such a LMR in the "simplest system"-with a free electronlike band structure and a nearly defect-free environment-excludes most of the possible exotic explanations for the appearance of a LMR and rather points to density fluctuations as the primary origin of the phenomenon. Both, the featureless LMR at high T and the quantum oscillations at low T follow the empirical resistance rule which states that the longitudinal conductance is directly related to the derivative of the transversal (Hall) conductance multiplied by the magnetic field and a constant factor α that remains unchanged over the entire temperature range. Only at low temperatures, small deviations from this resistance rule are observed beyond ν=1 that likely originate from a different transport mechanism for the composite fermions.
Melnikov, M. Yu.; Dolgopolov, V. T.; Shashkin, A. A.; Huang, S.-H.; Liu, C. W.; Kravchenko, S. V.
2017-12-01
We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field, B∥ , and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at I ⊥B∥ into the one measured at I ∥B∥ is suggested and is shown to yield results that agree with the experiment.
Directory of Open Access Journals (Sweden)
Lei Yang
2015-12-01
Full Text Available The stability of edge-quantum well-induced strong magnetism of multilayer armchair graphene nanoribbon (AGNR with excess electrons was investigated under applied tensile strain by density functional theory (DFT calculations. The results indicated that: (1 The strain along the armchair edge direction led to a transition of the multilayer AGNRs from ferromagnetic state to nonmagnetic state when the strain increased to a critical value; (2 The strain induced bond length changes reduced the stability of the edge-quantum well in terms of the reduction of the electrons capturing capacity; and (3 The spin splitting of the energy bands near the Fermi level reduced with the increase of the strain, resulting in the decrease of the spin moment. This finding suggests that the magnetic properties of graphene have strong dependence on its strain states, which is crucial to the design of graphene-based magnetic devices.
Energy Technology Data Exchange (ETDEWEB)
Ullah, S.; Gusev, G. M.; Hernandez, F. G. G., E-mail: felixggh@if.usp.br [Instituto de Física, Universidade de São Paulo, Caixa Postal 66318, CEP 05315-970 São Paulo, SP (Brazil); Bakarov, A. K. [Institute of Semiconductor Physics and Novosibirsk State University, Novosibirsk 630090 (Russian Federation)
2016-06-07
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width, and electron density (Dresselhaus linear and cubic constants) which allow us to attain long dephasing times in the nanoseconds range. The determination of the scales, namely, transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices.
UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy
Directory of Open Access Journals (Sweden)
W. Kong
2017-03-01
Full Text Available A high Al-content (y > 0.4 multi-quantum-well (MQW structure with a quaternary InxAlyGa(1-x-yN active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-yN thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm−2 to 107cm−2 and by optimizing the width and depth of the quantum wells.
Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures
International Nuclear Information System (INIS)
Kapon, Eli; Mereuta, Alexandru; Dorogan, Andrei; Dragutan, Nicolae; Vieru, Tatiana; Syrbu, Nicolae
2011-01-01
Radiation maxima were observed in photoluminescence spectra of GaAs/ In 0.3 Ga 0.7 As/ GaAs in case of 632.8 nm and 532 nm He-Ne laser excitation conditioned by the recombination from ground (e1-hh1, e1-lh1) and excited (e2-hh2, e2-lh2) states of polarionic excitons in quantum wells. The doublet character of e1-hh1, e1-lh1 transitions can be explained by the interaction of excitons in quantum wells. Radiation maxima are revealed in the region of 1.5eV energy conditioned by recombination transitions E b -hh1, E b -lh1of the GaAs buffer layer.
Al-Khalili, Jim
2003-01-01
In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.
InGaN/GaN Structures: Effect of the quantum well number on the cathodoluminescent properties
Czech Academy of Sciences Publication Activity Database
Hospodková, Alice; Hubáček, Tomáš; Oswald, Jiří; Pangrác, Jiří; Kuldová, Karla; Hývl, Matěj; Dominec, Filip; Ledoux, G.; Dujardin, C.
(2017), s. 1-5, č. článku 1700464. ISSN 0370-1972 R&D Projects: GA MŠk LM2015087; GA MŠk(CZ) LO1603; GA ČR GA16-11769S EU Projects: European Commission(XE) 690599 - ASCIMAT Institutional support: RVO:68378271 Keywords : MOVPE * nitrides * scintillator * quantum well * cathodoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.674, year: 2016
Czech Academy of Sciences Publication Activity Database
Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Dominec, Filip; Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.
2017-01-01
Roč. 464, Apr (2017), s. 206-210 ISSN 0022-0248 R&D Projects: GA MŠk LM2015087; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016
Energy Technology Data Exchange (ETDEWEB)
He, Juan; Li, Ding; Rajabi, K.; Yang, Wei; Hu, Xiaodong [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Liu, Lei [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215125 (China)
2014-04-15
A dual-wavelength LED sample with novel sandwiched structure in high-In-content MQWs is studied by temperature dependent photoluminescence (TDPL) and the abnormal temperature dependence of emission intensity is obtained. The novel MQWs structure which contains staggered quantum wells and an ultra-thin InN interlayer in the wells shows better luminescence property than the reference sample which has conventional quantum wells. Under 325 nm continuous wave laser excitation the LED sample of novel structure exhibits unexpected increasing luminescence intensity as temperature goes up from 140 K to 220 K and reaches its maximum at 220 K. This could be attributed to (1) the carrier redistribution and the novel sandwiched MQWs' high carrier trapping capability; (2) the intrinsic emission property of the MQWs enhanced by improvement of electron-hole overlap and reduction of quantum confined Stark effect (QCSE) and compositional fluctuation. TDPL under 405 nm laser excitation is also measured to support this view. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Light emission ranging from blue to red from a series of Iguana/GaN single quantum wells
International Nuclear Information System (INIS)
Martin, R.W.; Edwards, P.R.; Pecharroman-Gallego, R.; O'Donnell, K.P.; Liu, C.; Deatcher, C.J.; Watson, I.M.
2002-01-01
In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green, amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak ∼430 nm) InGaN quantum well at 860 deg. C the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760 deg. C. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed, including an analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields. (author)
Light emission ranging from blue to red from a series of Iguana/GaN single quantum wells
Energy Technology Data Exchange (ETDEWEB)
Martin, R.W. [Department of Physics, University of Strathclyde, Glasgow (United Kingdom)]. E-mail: r.w.martin@strath.ac.uk; Edwards, P.R.; Pecharroman-Gallego, R.; O' Donnell, K.P. [Department of Physics, University of Strathclyde, Glasgow (United Kingdom); Liu, C.; Deatcher, C.J.; Watson, I.M. [Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)
2002-04-07
In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green, amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak {approx}430 nm) InGaN quantum well at 860 deg. C the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760 deg. C. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed, including an analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields. (author)
Energy Technology Data Exchange (ETDEWEB)
Reich, Christoph, E-mail: Christoph.Reich@tu-berlin.de; Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Feneberg, Martin; Goldhahn, Rüdiger [Institut für Experimentelle Physik, Otto-von-Guericke-Universität, Universitätsplatz 2, Magdeburg 39106 (Germany); Rass, Jens; Kneissl, Michael [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany); Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)
2015-10-05
The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.
Well-width dependence of the exciton-phonon scattering in thin InGaAs/GaAs single quantum wells
DEFF Research Database (Denmark)
Borri, Paola; Langbein, Wolfgang Werner; Hvam, Jørn Märcher
1998-01-01
We studied the temperature dependence of the exciton dephasing time in three In0.18Ga0.82As/GaAs single quantum wells, with well thickness Lw of 1, 1.5, and 2 nm, by degenerate time-integrated four-wave-mixing (TI-FWM) using 100-fs pulses in reflection geometry. The TI-FWM correlation traces...... the FWM decay rate by a factor of 4 for T⩽80 K, and 2 for T=110 K, while the transition point is skipped. Also, we measure the density dependence of the dephasing and extrapolate the rate to zero density. The resulting 1/T2 versus temperature is shown. The acoustic and optical coefficient...
Directory of Open Access Journals (Sweden)
Ja-Ryong Koo
2012-03-01
Full Text Available We demonstrate red phosphorescent organic light-emitting diodes (OLEDs with multiple quantum well structures which confine triplet exciton inside an emitting layer (EML region. Five types of OLEDs, from a single to five quantum wells, are fabricated with charge control layers to produce high efficiencies, and the performance of the devices is investigated. The improved quantum efficiency and lifetime of the OLED with four quantum wells, and its suppressed quantum efficiency roll-off of 17.6%, can be described by the increased electron–hole charge balance owing to the bipolar property as well as the efficient triplet exciton confinement within each EML, and by prevention of serious triplet–triplet and/or triplet–polaron annihilation as well as the Förster self-quenching due to charge control layers.
Investigation of Landau level spin reversal in (110) oriented p-type GaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
Isik, Nebile
2009-09-01
In this thesis, the Landau level crossing or anticrossing of hole levels has been investigated in p-type GaAs 400 Aa wide quantum wells. In magneto-transport measurements, this is evidenced with the presence of an anomalous peak in the longitudinal resistance measurements at {nu}=1. In the transversal resistance measurements, no signature of this anomalous peak is observed. By increasing the hole density in the quantum well by applying a top gate voltage, the position of the anomalous peak shifts to higher magnetic fields. At very high densities, anomalous peak disappears. By applying a back gate voltage, the electric field in the quantum well is tuned. A consequence is that the geometry of the quantum well is tuned from square to triangular. The anomalous peak position is shown to depend also on the back gate voltage applied. Temperature dependence of the peak height is consistent with thermal activation energy gap ({delta}/2= 135 {mu}eV). The activation energy gap as a function of the magnetic field has a parabolic like dependence, with the minimum of 135 {mu}eV at 4 T. The peak magnitude is observed to decrease with increasing temperature. An additional peak is observed at {nu}=2 minimum. This additional peak at {nu}=2 might be due to the higher Landau level crossing. The p-type quantum wells have been investigated by photoluminescence spectroscopy, as a function of the magnetic field. The polarization of the emitted light has been analyzed in order to distinguish between the transitions related to spin of electron {+-} 1/2 and spin of hole -+ 3/2. The transition energies of the lowest electron Landau levels with spin {+-} 1/2 and hole Landau levels with spin -+ 3/2 versus magnetic field show crossing at 4 T. The heavy hole Landau levels with spins {+-} 3/2 are obtained by the substraction of transition energies from the sum of lowest electron Landau level energy and the energy gap of GaAs. The heavy hole Landau levels show a crossing at 4 T. However, due to the
International Nuclear Information System (INIS)
El Ghazi, Haddou; Jorio, Anouar
2014-01-01
Within the framework of effective-mass approximation and finite parabolic potential barrier, single particle and ground-state interband recombination energies in Core|well|shell based on GaN|(In,Ga)N|GaN spherical QDQW are investigated as a function of the inner and the outer radii. The temperature dependency of effective-mass, band-gap energy and potential barrier is taken into account. Particle eigenvalue and band-gap energy competing effects are speculated to explain our numerical results which show that the interband recombination energy increases when the temperature increases. The results we obtained are in quite good agreement with the findings
Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.
Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E
2015-09-25
Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.
Energy Technology Data Exchange (ETDEWEB)
Eldridge, Peter S.; Huebner, J.; Oertel, S.; Oestreich, M. [Institute for Solid State Physics, Gottfried Wilhelm Leibniz University Hannover (Germany); Henini, M. [School of Physics and Astronomy, University of Nottingham (United Kingdom); Harley, R.T. [School of Physics and Astronomy, University of Southampton (United Kingdom)
2010-07-01
Zincblende semiconductor quantum wells grown on (100) substrates possessing low symmetry (C{sub 2v}) provide an interesting medium for the study of electron spin dynamics as the in-plane lifetime and g-factor can be anisotropic. The origin of the expected lifetime anisotropy is interference of bulk (BIA) and structural (SIA) inversion anisotropy terms in the conduction band spin-orbit splitting while that of the g-factor is the effective conduction band electric field. Interpretation of cw Hanle measurements is difficult as the depolarisation half width depends on both g-factor and spin lifetime simultaneously. In this work we investigate separately the in-plane electron spin lifetime and the g-factor in GaAs/AlGaAs quantum wells with alloy asymmetry using time-resolved spin quantum-beat spectroscopy. The measurements show easily detectable in-plane anisotropy of the electron g-factor but no anisotropy of the spin lifetime. The results therefore demonstrate that the electron g-factor can be readily engineered through the effective conduction band electric field but that the SIA splitting in such systems is unmeasurably small.
Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure
Energy Technology Data Exchange (ETDEWEB)
Mohanta, Antaryami; Wang, Shiang-Fu; Jang, Der-Jun, E-mail: djjang@mail.nsysu.edu.tw [Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Young, Tai-Fa [Department of Mechanical and Electromechanical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Yeh, Ping-Hung; Ling, Dah-Chin [Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan (China); Lee, Meng-En [Department of Physics, National Kaohsiung Normal University, Kaohsiung 80264, Taiwan (China)
2015-04-14
Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τ{sub r}, extracted from the TRPL profile shows ∼T{sup 3/2} dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.
Directory of Open Access Journals (Sweden)
Yufeng Li
2017-11-01
Full Text Available Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed.
Energy Technology Data Exchange (ETDEWEB)
Jafarzadeh, H., E-mail: h-jafarzadeh56@yahoo.com [Sama Technical and Vocational Training College, Islamic Azad University, Tabriz Branch, Tabriz (Iran, Islamic Republic of)
2015-04-28
The spontaneously generated coherence (SGC) effects on optical bistability (OB) are investigated in a five-level K-type system. It is found that SGC makes the system phase dependent. Thus, the OB and the absorption behavior of the system can be controlled by the relation phase of applied fields. In addition, the pump field intensity effect on the OB behavior is discussed. The experimental viability of the model in semiconductor quantum well system is also discussed [A. V. Germanenko et al., J. Phys.: Conf. Ser. 376, 012024 (2012); D. S. Chemla et al., IEEE J. Quantum Electron. 20(3), 265 (1984); L. V. Butov et al., J. Exp. Theor. Phys. 88(5), 1036 (1999); J. F. Dynes et al., Phys. Rev. Lett. 94, 157403 (2005); S. Schmitt-Rinka et al., Adv. Phys. 38(2), 89 (1989); and H. W. Liu et al., Appl. Phys. Lett. 54, 2082 (1989)].
Final Report, DOE grant DE-FG02-99ER45780, "Indirect Excitons in Coupled Quantum Wells"
Energy Technology Data Exchange (ETDEWEB)
Snoke, david W. [University of Pittsburgh
2014-07-21
The is the final technical report for this project, which was funded by the DOE from 1999 to 2012. The project focused on experimental studies of spatially indirect excitons in coupled quantum wells, with the aim of understanding the quantum physics of these particles, including such effects as pattern formation due to electron-hole charge separation, the Mott plasma-insulator transition, luminescence up-conversion through field-assisted tunneling, luminescence line shifts due to many-body renormalization and magnetic field effects on tunneling, and proposed effects such as Bose-Einstein condensation of indirect excitons and phase separation of bright and dark indirect excitons. Significant results are summarized here and the relation to other work is discussed.
Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well
International Nuclear Information System (INIS)
Danilov, L. V.; Zegrya, G. G.
2008-01-01
The basic threshold characteristics of a semiconductor IR laser based on a heterostructure with deep InAs 0.84 Sb 0.16 /AlSb quantum wells (QWs) have been studied. The threshold carrier densities and threshold current densities of radiative and Auger recombination (AR) were found. It is shown that at certain QW parameters the AR rate is strongly (by several orders of magnitude) suppressed. In this case, the emission wavelength falls within the interval 2-3.5 μm, which corresponds to the mid-IR spectral range. The internal quantum efficiency of emission at the lasing threshold was calculated and its dependence on the QW width within the AR suppression range was demonstrated. The laser structure was optimized with respect to the number of QWs
Quach, Patrick; Jollivet, Arnaud; Isac, Nathalie; Bousseksou, Adel; Ariel, Frédéric; Tchernycheva, Maria; Julien, François H.; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hierro, Adrián.; Le Biavan, Nolwenn; Hugues, Maxime; Chauveau, Jean-Michel
2017-03-01
Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union's Horizon 2020 research and innovation programme under grant agreement #665107.
International Nuclear Information System (INIS)
Lopez, S.Y.; Duque, C.A.; Porras-Montenegro, N.
2004-01-01
Full text: Donor-related optical-absorption spectra for GaAs-(Ga,Al)As quantum wells under hydrostatic pressure are investigated. A variational procedure in the e effective-mass approximation is used in order to obtain binding energies and wave functions. As a general feature, we observe that the binding energy increases with the pressure and with the decreasing of the width of the well. The pressure-related Γ-X crossover has been taken into account in the whole calculation. For the low-pressure regime we observe a linear binding energy behavior, whereas for high pressure the main effect associated with the height of the barrier is the bending of the binding energy curves towards smaller values. Two special structures in the density of impurity states and in the donor-related optical-absorption spectra are observed: an edge associated with transitions involving impurities at the center of the well and a peak associated with transitions related to impurities at the edges of the quantum well. Also, we observe shifts to higher energies of the density of impurity states as a function of the binding energy, as well as changes in the intensity with a red shift of the absorption effect with the hydrostatic pressure. (author)
International Nuclear Information System (INIS)
Sedrakian, D.M.; Badalyan, D.H.; Sedrakian, L.R.
2015-01-01
Quasi-one-dimensional quantum particle scattering on two-dimensional δ-potential is considered. Analytical expressions for the amplitudes of the multi-channel transmission and reflection are given. The problem for the case when the number of channels is finite and equal N, and the particle falls on the potential moving through the channel l is solved. The case of a three channel scattering is studied in details. It is shown that under conditions k 2 → 0 and k 3 → 0 'overpopulation' of particles on the second and third channels occurs. The points of δ-potential location which provide a full 'overpopulation' of particles is also found
In-plane g factor of low-density two-dimensional holes in a Ge quantum well.
Energy Technology Data Exchange (ETDEWEB)
Lu, Tzu-Ming [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Harris, Charles Thomas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Huang, Shih-Hsien [National Taiwan Univ., Taipei (Taiwan); Chuang, Yen [National Taiwan Univ., Taipei (Taiwan); Li, Jiun-Yun [National Taiwan Univ., Taipei (Taiwan); Liu, CheeWee [National Taiwan Univ., Taipei (Taiwan)
2017-12-01
High-mobility two-dimensional (2D) holes residing in a Ge quantum well are a new electronic system with potentials in quantum computing and spintronics. Since for any electronic material, the effective mass and the g factor are two fundamental material parameters that determine the material response to electric and magnetic fields, measuring these two parameters in this material system is thus an important task that needs to be completed urgently. Because of the quantum confinement in the crystal growth direction (z), the biaxial strain of epitaxial Ge on SiGe, and the valance band nature, both the effective mass and the g factor can show very strong anisotropy. In particular, the in-plane g factor (g_{ip}) can be vanishingly small while the perpendicular g factor (g_{z}) can be much larger than 2. Here we report the measurement of g_{ip} at very low hole densities using in-plane magneto-resistance measurement performed at the NHMFL.
Sarcan, F.; Nutku, F.; Donmez, O.; Kuruoglu, F.; Mutlu, S.; Erol, A.; Yildirim, S.; Arikan, M. C.
2015-08-01
We have performed magnetoresistance measurements on n- and p-type modulation doped GaInNAs/GaAs quantum well (QW) structures in both the weak (B magnetoresistance traces are used to extract the spin coherence, phase coherence and elastic scattering times as well Rashba parameters and spin-splitting energy. The calculated Rashba parameters for nitrogen containing samples reveal that the nitrogen composition is a significant parameter to determine the degree of the spin-orbit interactions. Consequently, GaInNAs-based QW structures with various nitrogen compositions can be beneficial to adjust the spin-orbit coupling strength and may be used as a candidate for spintronics applications.
Energy Technology Data Exchange (ETDEWEB)
Dacal, Luis Carlos Ogando
2001-08-01
A physical system where indistinguishable particles interact with each other creates the possibility of studying correlation and exchange effect. The simplest system is that one with only two indistinguishable particles. In condensed matter physics, these complexes are represented by charged excitons, donors and acceptors. In quantum wells, the valence band is not parabolic, therefore, the negatively charged excitons and donors are theoretically described in a simpler way. Despite the fact that the stability of charged excitons (trions) is known since the late 50s, the first experimental observation occurred only at the early 90s in quantum well samples, where their binding energies are one order of magnitude larger due to the one dimensional carriers confinement. After this, these complexes became the subject of an intense research because the intrinsic screening of electrical interactions in semiconductor materials allows that magnetic fields that are usual in laboratories have strong effects on the trion binding energy. Another rich possibility is the study of trions as an intermediate state between the neutral exciton and the Fermi edge singularity when the excess of doping carriers is increased. In this thesis, we present a theoretical study of charged excitons and negatively charged donors in GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum wells considering the effects of external electric and magnetic fields. We use a simple, accurate and physically clear method to describe these systems in contrast with the few and complex treatments s available in the literature. Our results show that the QW interface defects have an important role in the trion dynamics. This is in agreement with some experimental works, but it disagrees with other ones. (author)
Ivanov, Ts
2012-03-29
A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.
Klipstein, P C
2016-09-21
A solution of the 4 × 4 k · p Hamiltonian for the quantum spin Hall (QSH) edge states in ideal semiconductor topological insulator (TI) quantum wells (QWs) was recently demonstrated by the author using standard boundary conditions for the wave function and its derivative, in order to address unphysical behavior associated with open boundary conditions (Klipstein 2015 Phys. Rev. B 91 035310). For HgTe/CdTe QWs which have strong s-p hybridization, there are two non-degenerate solutions in each spin direction with a finite amplitude at the edge, one of which was shown to be spurious. For the case of weakly hybridized InAs/GaSb/AlSb QWs, the solutions near the zone center are degenerate, and the question is now settled of which solution is spurious. The physical solutions for the ideal QW are then used as the basis for a perturbation treatment of the edge state dispersions in realistic QWs, where interface, bulk and structural asymmetries are also present. Interactions are included with more remote states than considered previously, as required for a consistent treatment of the TI bulk states, where a large difference exists in the spin splittings of the conduction and valence band edges. The asymmetry perturbations induce only minor changes to the edge state dispersions, which no longer merge smoothly with the bulk band extrema.
International Nuclear Information System (INIS)
Fadil, Ahmed; Iida, Daisuke; Chen, Yuntian; Ou, Yiyu; Kamiyama, Satoshi; Ou, Haiyan
2016-01-01
We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed. Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.
Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser
Yan, Xin; Wei, Wei; Tang, Fengling; Wang, Xi; Li, Luying
2017-01-01
Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q fac...
Optical detection of magnetoplasma resonances in indirect-gap AlAs/AlGaAs quantum wells
Khisameeva, A. R.; Gubarev, S. I.; Murav'ev, V. M.; Kukushkin, I. V.
2017-07-01
Magnetoplasma excitations in AlAs/AlGaAs quantum wells, characterized by strong anisotropy in the effective mass of two-dimensional electrons, are investigated using the optical detection of resonance microwave absorption. This technique is used for the first time for an indirect-gap semiconductor. It is found that the magnetic dispersion of the cyclotron magnetoplasma mode deviates significantly from the theoretically expected behavior. This may be related to the considerably more pronounced manifestation of retardation effects in two-dimensional systems with an anisotropic energy spectrum.
Energy Technology Data Exchange (ETDEWEB)
Kononov, A.; Egorov, S. V. [Russian Academy Sciences, Institute of Solid State Physics (Russian Federation); Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A. [Institute of Semiconductor Physics (Russian Federation); Deviatov, E. V., E-mail: dev@issp.ac.ru [Russian Academy Sciences, Institute of Solid State Physics (Russian Federation)
2016-11-15
We experimentally investigate spin-polarized electron transport between a permalloy ferromagnet and the edge of a two-dimensional electron system with band inversion, realized in a narrow, 8 nm wide, HgTe quantum well. In zero magnetic field, we observe strong asymmetry of the edge potential distribution with respect to the ferromagnetic ground lead. This result indicates that the helical edge channel, specific for the structures with band inversion even at the conductive bulk, is strongly coupled to the ferromagnetic side contact, possibly due to the effects of proximity magnetization. This allows selective and spin-sensitive contacting of helical edge states.
DEFF Research Database (Denmark)
van Capel, P. J. S.; Turchinovich, Dmitry; Porte, Henrik
2011-01-01
We investigate acoustic and electromagnetic emission from optically excited strained piezoelectric In0.2Ga0.8N/GaN multiple quantum wells (MQWs), using optical pump-probe spectroscopy, time-resolved Brillouin scattering, and THz emission spectroscopy. A direct comparison of detected acoustic...... signals and THz electromagnetic radiation signals demonstrates that transient strain generation in InGaN/GaN MQWs is correlatedwith electromagnetic THz generation, and both types of emission find their origin in ultrafast dynamical screening of the built-in piezoelectric field in the MQWs. The measured...
Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm
Morozov, S. V.; Rumyantsev, V. V.; Fadeev, M. A.; Zholudev, M. S.; Kudryavtsev, K. E.; Antonov, A. V.; Kadykov, A. M.; Dubinov, A. A.; Mikhailov, N. N.; Dvoretsky, S. A.; Gavrilenko, V. I.
2017-11-01
We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide-gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20-50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.
Martín-Martín, A.; Iñiguez, P.; Jiménez, J.; Oudart, M.; Nagle, J.
2011-08-01
The influence of the quantum well (QW) interfaces with the barrier layers on the rapid degradation of AlGaAs based high power laser bars (808 nm) is investigated. Thermal stresses induced in the device by the local heating produced by nonradiative recombination areas at the facet mirror are calculated by means of a thermomechanical model. Results show that the laser power density threshold necessary to achieve the plastic deformation, leading to the generation of dislocations and to the failure of these devices, is reduced as the quality of the QW interfaces worsens in terms of thermal boundary resistance.
Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T
Energy Technology Data Exchange (ETDEWEB)
Spirin, K. E., E-mail: spirink@ipmras.ru; Krishtopenko, S. S. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Sadofyev, Yu. G. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Drachenko, O. [Laboratoire National des Champs Magn’etiques Intenses (France); Helm, M. [Forschungszentrum Dresden–Rossendorf, Dresden High-Magnetic-Field Laboratory and Institute of Ion-Beam Physics and Materials Research (Germany); Teppe, F.; Knap, W. [GIS-TERALAB Universite Montpellier II, Laboratoire Charles Coulomb UMR CNRS 5221 (L2C) (France); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2015-12-15
Electron cyclotron resonance in InAs/AlSb heterostructures with quantum wells of various widths in pulsed magnetic fields up to 45 T are investigated. Our experimental cyclotron energies are in satisfactory agreement with the results of theoretical calculations performed using the eight-band kp Hamiltonian. The shift of the cyclotron resonance (CR) line, which corresponds to the transition from the lowest Landau level to the low magnetic-field region, is found upon varying the electron concentration due to the negative persistent photoconductivity effect. It is shown that the observed shift of the CR lines is associated with the finite width of the density of states at the Landau levels.
International Nuclear Information System (INIS)
Pavlov, N V; Zegrya, G G
2015-01-01
Optical properties of heterostructures with deep quantum wells have been studied in the framework of four-band Kane mode permitting a nonparabolic energy spectrum of charge carriers to be taken into account. The system AlSb/InAs 0.84 Sb 0.16 /AlSb was used as an example. It is established that the nonparabolicity weakly influences the overlap integral between s- and p-states, but notably increase the state density and optical absorption coefficient in the conduction band. (paper)
In-situ curvature monitoring and X-ray diffraction study of InGaAsP/InGaP quantum wells
Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; Geisz, John F.; Dippo, Pat; Kuciauskas, Darius; Colter, Peter C.
2017-10-01
The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements during the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In0.32Ga0.68AsP/In0.49Ga0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. A 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.
Energy Technology Data Exchange (ETDEWEB)
Zhao Juan [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhang Lei; Wang Jun [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)
2012-07-15
Non-doped white organic light-emitting devices (WOLEDs) with a quadruple-quantum-well structure were fabricated. An alternate layer of ultrathin blue and yellow iridium complexes was employed as the potential well layer, while potential barrier layers (PBLs) were chosen to be 2,2',2''-(1,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) or N,N'-dicarbazolyl-3,5-benzene (mCP) combined TPBi. On adjusting the PBLs for device performance comparison, the results showed that the device with all-TPBi PBLs exhibited a yellow emission with the color coordinates of (0.50,0.47) at a luminance of 1000 cd/m{sup 2}, while stable white emission with the color coordinates of (0.36,0.44) was observed in the device using mCP combined TPBi as the PBLs. Meanwhile, for the WOLED, with a reduced efficiency roll-off, a maximum luminance, luminous efficiency, and external quantum efficiency of 12,610 cd/m{sup 2}, 10.2 cd/A, and 4.4%, respectively, were achieved. The performance improvement by the introduction of mCP PBL was ascribed to the well confined exciton and the reduced exciton quenching effect in the multiple emission regions.
Investigation of interfaces in AlSb/InAs/Ga₀.₇₁In₀.₂₉Sb quantum wells by photoluminescence
Energy Technology Data Exchange (ETDEWEB)
Junliang, Xing; Yu, Zhang; Yongping, Liao; Juan, Wang; Wei, Xiang; Hongyue, Hao; Yingqiang, Xu; Zhichuan, Niu, E-mail: zcniu@semi.ac.cn [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
2014-09-28
We have investigated excitation power and temperature dependent PL spectra to systematically study the influences of the interfaces in the both InAs/Ga₀.₇₁In₀.₂₉Sb and InAs/AlSb on the optical properties of AlSb/Ga₀.₇₁In₀.₂₉Sb/InAs quantum wells (QWs). The localized states as well as the activation energy were analyzed to discuss the possible thermal quenching and non-radiative recombination mechanisms. We found two non-radiative recombination processes were involved in the thermal quenching of radiative emission for the QW structures. The GaAs-like interface in InAs/Ga₀.₇₁In₀.₂₉Sb with higher activation energy (62.7 meV) in high temperature region (70 K–300 K) supplies a deeper hole confinement and less roughness than the InSb-like one, which suppress non-radiative recombination process and promote the optical qualities of the quantum wells. The peak energy of the InSb-like sample exhibited “step-curve” behavior with increase temperature. Neither InSb-like nor AlAs-like interface in InAs/AlSb favored the radiative emission efficiency.
Cano-Andrade, Sergio
In this dissertation, applications of thermodynamics at the macroscopic and quantum levels of description are developed. Within the macroscopic level, an upper-level Sustainability Assessment Framework (SAF) is proposed for evaluating the sustainable and resilient synthesis/design and operation of sets of small renewable and non-renewable energy production technologies coupled to power production transmission and distribution networks via microgrids. The upper-level SAF is developed in accord with the four pillars of sustainability, i.e., economic, environmental, technical and social. A superstructure of energy producers with a fixed transmission network initially available is synthesized based on the day with the highest energy demand of the year, resulting in an optimum synthesis, design, and off-design network configuration. The optimization is developed in a quasi-stationary manner with an hourly basis, including partial-load behavior for the producers. Since sustainability indices are typically not expressed in the same units, multicriteria decision making methods are employed to obtain a composite sustainability index. Within the quantum level of description, steepest-entropy-ascent quantum thermodynamics (SEA-QT) is used to model the phenomenon of decoherence. The two smallest microscopic composite systems encountered in Nature are studied. The first of these is composed of two two-level-type particles, while the second one is composed of a two-level-type particle and an electromagnetic field. Starting from a non-equilibrium state of the composite and for each of the two different composite systems, the time evolution of the state of the composite as well as that of the reduced and locally-perceived states of the constituents are traced along their relaxation towards stable equilibrium at constant system energy. The modeling shows how the initial entanglement and coherence between constituents are reduced during the relaxation towards a state of stable
Fast response of the optical nonlinearity in a GaAs/AlGaAs asymmetric triple quantum well structure
Ahn, S H; Sawaki, N
1999-01-01
The time response of the optical nonlinear behavior in a GaAs/AlGaAs asymmetric triple quantum well structure is estimated by using a picosecond pump-probe method at 77 K. From the results of the transmission of the probe pulse as a function of the delay time at the excitation wavelengths, a rise time of 5 approx 10 ps and a fall time of 8 approx 16 ps are obtained. The nonlinear behavior is attributed to the triple resonance of the electronic states due to the build-up of the internal field induced by the separation of photo-excited electrons and holes. It is found that the rise time is determined by the tunneling transfer time of the electrons in the narrowest well to an adjacent well separated by a thin potential barrier.
Sin, Yongkun; LaLumondiere, Stephen; Foran, Brendan; Ives, Neil; Presser, Nathan; Lotshaw, William; Moss, Steven C.
2013-03-01
Reliability and degradation processes in broad-area InGaAs-AlGaAs strained quantum well (QW) lasers are under investigation because these lasers are indispensible as pump lasers for fiber lasers and amplifiers that have found an increasing number of industrial applications in recent years. Extensive efforts by a number of groups to develop InAs-GaAs quantum dot (QD) lasers have recently led to significant improvement in performance characteristics, but due to a short history of commercialization, high power QD lasers lacks studies in reliability and degradation processes. For the present study, we investigated reliability and degradation processes in MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers as well as in MBE-grown broad-area InAs-GaAs QD lasers using various failure mode analysis (FMA) techniques. Dots for the QD lasers were formed via a self-assembly process during MBE growth. We employed two different methods to degrade lasers during accelerated life-testing: commercial lifetester and our newly developed time-resolved electroluminescence (TR-EL) set-up. Our TR-EL set-up allows us to observe formation of a hot spot and subsequent formation and progression of dark spots and dark lines through windowed n-contacts during entire accelerated life-tests. Deep level transient spectroscopy (DLTS) and time resolved photoluminescence (TR-PL) techniques were employed to study trap characteristics and carrier dynamics in pre- and post-stressed QW and QD lasers to identify the root causes of catastrophic degradation processes in these lasers. We also employed electron beam induced current (EBIC), focused ion beam (FIB), and high resolution TEM to study dark line defects and crystal defects in post-aged QW and QD lasers at different stages of degradation.
Observation of Dirac bands in artificial graphene in small-period nanopatterned GaAs quantum wells
Wang, Sheng; Scarabelli, Diego; Du, Lingjie; Kuznetsova, Yuliya Y.; Pfeiffer, Loren N.; West, Ken W.; Gardner, Geoff C.; Manfra, Michael J.; Pellegrini, Vittorio; Wind, Shalom J.; Pinczuk, Aron
2018-01-01
Charge carriers in graphene behave like massless Dirac fermions (MDFs) with linear energy-momentum dispersion1, 2, providing a condensed-matter platform for studying quasiparticles with relativistic-like features. Artificial graphene (AG)—a structure with an artificial honeycomb lattice—exhibits novel phenomena due to the tunable interplay between topology and quasiparticle interactions3-6. So far, the emergence of a Dirac band structure supporting MDFs has been observed in AG using molecular5, atomic6, 7 and photonic systems8-10, including those with semiconductor microcavities11. Here, we report the realization of an AG that has a band structure with vanishing density of states consistent with the presence of MDFs. This observation is enabled by a very small lattice constant (a = 50 nm) of the nanofabricated AG patterns superimposed on a two-dimensional electron gas hosted by a high-quality GaAs quantum well. Resonant inelastic light-scattering spectra reveal low-lying transitions that are not present in the unpatterned GaAs quantum well. These excitations reveal the energy dependence of the joint density of states for AG band transitions. Fermi level tuning through the Dirac point results in a collapse of the density of states at low transition energy, suggesting the emergence of the MDF linear dispersion in the AG.
Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Energy Technology Data Exchange (ETDEWEB)
Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)
2012-01-15
We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
International Nuclear Information System (INIS)
Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva
2012-01-01
We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Tsai, Yu-Lin; Wang, Sheng-Wen; Huang, Jhih-Kai; Hsu, Lung-Hsing; Chiu, Ching-Hsueh; Lee, Po-Tsung; Yu, Peichen; Lin, Chien-Chung; Kuo, Hao-Chung
2015-11-30
This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm2 to 0.92 mA/cm2, as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices.
Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes
International Nuclear Information System (INIS)
Chen, Haoran; Yang, Lin'an; Hao, Yue
2014-01-01
The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In x Ga 1−x N at around x = 0.06
Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures
DEFF Research Database (Denmark)
Thirstrup, C.
1992-01-01
A novel electro-optical phase modulator working at 1.55 µm is analyzed and proposed. It is shown by a numerical model that in a GaInAs/InP pn-nin-pn multiple-quantum-well waveguide structure, large optical phase modulation can be obtained at small intensity modulation and with improved performance...... compared to what is achieved in quantum confined Stark effect modulators of the same material system. The device proposed is based on a modulation of the quasi-Fermi energies of the electrons in the GaInAs quantum wells. This operational principle allows GHz modulation frequencies. Applied Physics Letters...
DEFF Research Database (Denmark)
Broe, Jacob; Keller, Ole
2002-01-01
It is predicted that the Goos-Hänchen effect can be resonantly enhanced by placing a metallic quantum well (ultrathin film) at the dielectric-vacuum (air) interface. We study the enhancement of the phenomenon, as it appears in frustrated total internal reflection with p-polarized light, both...... by depositing quantum wells on the glass-vacuum interfaces to obtain a better spatial photon localization....
Energy Technology Data Exchange (ETDEWEB)
Balagula, R. M., E-mail: rmbal@spbstu.ru; Vinnichenko, M. Ya., E-mail: mvin@spbstu.ru; Makhov, I. S.; Firsov, D. A.; Vorobjev, L. E. [Peter the Great Saint-Petersburg Polytechnic University (Russian Federation)
2016-11-15
The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.
Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
Sun, H. D.; Hetterich, M.; Dawson, M. D.; Egorov, A. Yu.; Bernklau, D.; Riechert, H.
2002-08-01
The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.
Low field magnetoresistance in a 2D topological insulator based on wide HgTe quantum well.
Olshanetsky, E B; Kvon, Z D; Gusev, G M; Mikhailov, N N; Dvoretsky, S A
2016-09-01
Low field magnetoresistance is experimentally studied in a two-dimensional topological insulator (TI) in both diffusive and quasiballistic samples fabricated on top of a wide (14 nm) HgTe quantum well. In all cases a pronounced quasi-linear positive magnetoresistance is observed similar to that found previously in diffusive samples based on a narrow (8 nm) HgTe well. The experimental results are compared with the main existing theoretical models based on different types of disorder: sample edge roughness, nonmagnetic disorder in an otherwise coherent TI and metallic puddles due to locally trapped charges that act like local gate on the sample. The quasiballistic samples with resistance close to the expected quantized values also show a positive low-field magnetoresistance but with a pronounced admixture of mesoscopic effects.
Energy Technology Data Exchange (ETDEWEB)
Krishtopenko, S. S. [Institute for Physics of Microstructures RAS, GSP-105, 603950, Nizhny Novgorod, Russia and Laboratoire National des Champs Magnétiques Intenses (LNCMI-T), CNRS UPR 3228 Université de Toulouse, 143 Avenue de Rangueil, F-31400 Toulouse (France); Malyzhenkov, A. V.; Kalinin, K. P.; Ikonnikov, A. V.; Maremyanin, K. V.; Gavrilenko, V. I. [Institute for Physics of Microstructures RAS, GSP-105, 603950, Nizhny Novgorod (Russian Federation); Goiran, M. [Laboratoire National des Champs Magnétiques Intenses (LNCMI-T), CNRS UPR 3228 Université de Toulouse, 143 Avenue de Rangueil, F-31400 Toulouse (France)
2013-12-04
We report a study of electron spin resonance (ESR) in a perpendicular magnetic field in n-type narrow-gap quantum well (QW) heterostructures. Using the Hartree-Fock approximation, based on the 8×8 k⋅p Hamiltonian, the many-body corrections to the ESR energy are found to be nonzero in symmetric and asymmetric narrow-gap QWs. We demonstrate a significant enhancement of the ESR energy in asymmetric QWs, induced by the Rashba spin splitting and exchange interaction, as well as the exchange-induced enhancement of the ESR energy in symmetric QWs. The ESR energies estimated for 2DEG in InAs/AlSb QWs are compared with experimental results in weak magnetic fields.
Near-infrared intersubband transitions in InGaAs-AlAs-InAlAs double quantum wells
International Nuclear Information System (INIS)
Semtsiv, M.P.; Ziegler, M.; Masselink, W.T.; Georgiev, N.; Dekorsy, T.; Helm, M.
2005-01-01
Intersubband optical transitions at short wavelengths in strain-compensated In 0.70 Ga 0.30 As--AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55 μm, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on (001)InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2-4 μm. Significant oscillator strength, however, also extends out to 800 meV, 1.55 μm
Resonant trapping in the transport of a matter-wave soliton through a quantum well
International Nuclear Information System (INIS)
Ernst, Thomas; Brand, Joachim
2010-01-01
We theoretically investigate the scattering of bright solitons in a Bose-Einstein condensate on narrow attractive potential wells. Reflection, transmission, and trapping of an incident soliton are predicted to occur with remarkably abrupt transitions upon varying the potential depth. Numerical simulations of the nonlinear Schroedinger equation are complemented by a variational collective coordinate approach. The mechanism for nonlinear trapping is found to rely both on resonant interaction between the soliton and bound states in the potential well and on the radiation of small-amplitude waves. These results suggest that solitons can be used to probe bound states that are not accessible through scattering with single atoms.
Weber, Eicke R; Liu, H C
1999-01-01
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Pro
International Nuclear Information System (INIS)
Zhang, Feng; Ikeda, Masao; Liu, Jianping; Zhang, Shuming; Zhou, Kun; Yang, Hui; Liu, Zongshun
2015-01-01
Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells
Energy Technology Data Exchange (ETDEWEB)
Zhang, Feng; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn; Liu, Jianping; Zhang, Shuming [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Zhou, Kun; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Institute of Semiconductors (CAS), Beijing 100083 (China); Liu, Zongshun [Institute of Semiconductors (CAS), Beijing 100083 (China)
2015-07-21
Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.
Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
García-Cervantes, H.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)
2014-05-15
We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n{sub 2DA} and n{sub 2DB}, and the same well width. The Thomas-Fermi approximation, the semi-empirical sp{sub 3}s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures.