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Sample records for inas wire structures

  1. Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire

    International Nuclear Information System (INIS)

    Saravanan, S.; John Peter, A.; Lee, Chang Woo

    2014-01-01

    Excitons confined in an InAs 1−x P x /InP (x=0.2) quantum well wire are studied in the presence of magnetic field strength. Numerical calculations are carried out using variational approach within the single band effective mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is investigated in the influence of magnetic field strength taking into account the geometrical confinement effect. The magnetic field induced optical band as a function of wire radius is investigated in the InAs 0.8 P 0.2 /InP quantum well wire. The valence-band anisotropy is included in our theoretical model by employing different hole masses in different spatial directions. The optical gain as a function of incident photon energy is computed in the presence of magnetic field strength. The corresponding 1.55 μm wavelength is achieved for 40 Å InAs 0.8 P 0.2 /InP quantum well wire. We hope that the results could be used for the potential applications in fiber optic communications. -- Highlights: • Magnetic field induced excitons confined in a InAs 1−x P x /InP (x=0.2) quantum well wire are studied. • The compressive strain is included throughout the calculations. • The energy difference of the ground and the first excited state is investigated in the presence of magnetic field strength. • The magnetic field induced optical band with the geometrical confinement is studied. • The optical gain with the photon energy is computed in the presence of magnetic field strength

  2. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  3. Electromagnetic Behaviour of Metallic Wire Structures

    CERN Document Server

    Chui, S T

    2013-01-01

    Despite the recent development and interest in the photonics of metallic wire structures, the relatively simple concepts and physics often remain obscured or poorly explained to those who do not specialize in the field. Electromagnetic Behaviour of Metallic Wire Structures provides a clear and coherent guide to understanding these phenomena without excessive numerical calculations.   Including both background material and detailed derivations of the various different formulae applied, Electromagnetic Behaviour of Metallic Wire Structures describes how to extend basic circuit theory relating to voltages, currents, and resistances of metallic wire networks to include situations where the currents are no longer spatially uniform along the wire. This lays a foundation for a deeper understanding of the many new phenomena observed in meta-electromagnetic materials.   Examples of applications are included to support this new approach making Electromagnetic Behaviour of Metallic Wire Structures a comprehensive and ...

  4. Nexus between directionality of terahertz waves and structural parameters in groove patterned InAs

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Jong-Hyuk; Min, Kyunggu; Jeong, Hoonil; Jho, Young-Dahl [School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Eun-Hye; Song, Jin-Dong [Center for Opto-Electronics Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

    2013-04-07

    We performed terahertz (THz) time-domain spectroscopy in various geometries, for characterizing the directivity of THz waves emitted from groove patterned InAs structures. We first identified two transient transport processes as underlying THz emission mechanisms in InAs epilayers with different thicknesses. Carrier drift around the surface depletion region was predominant for the THz wave generation in the thin sample group (10-70 nm), whereas electronic diffusion overrode the drift currents in the thick sample group (370-900 nm) as revealed by the amplitude change and phase reversal. Through a combination of electron-beam lithography and inductively coupled plasma etching in 1 {mu}m-thick InAs epilayers, we could further periodically fabricate either asymmetric V-groove patterns or symmetric parabolic apertures. The THz amplitude was enhanced, particularly along the line-of-sight transmissive direction when the periodic groove patterns act as microscale reflective mirrors separated by a scale of the diffusion length.

  5. Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors

    Science.gov (United States)

    Han, Sangmoon; Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Seoung-Ki; Hwang, Jeongwoo; Chung, Dong Chul; Kim, Jin Soo

    2018-02-01

    We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 kΩ and 0.19 Ω cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 kΩ and 0.39 Ω cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature.

  6. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  7. STRUCTURE AND CHARACTERISTICS OF PATENTED HIGH-CARBON WIRE

    Directory of Open Access Journals (Sweden)

    A. Ju. Borisenko

    2011-01-01

    Full Text Available The influence of bainite structure on mechanical characteristics of wire of steel 80 after patenting is studied. The quantity and structure state of bainite, providing high complex of mechanical characteristics of high-carbon wire, is determined.

  8. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    International Nuclear Information System (INIS)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  9. Structured Wiring Systems: Bringing Sanity to Network Cabling!

    Science.gov (United States)

    Learn, Larry L., Ed.

    1995-01-01

    While most organizations, including libraries, can benefit from a structured wiring system, few likely have the expertise and resources to place, specify, and install network cabling by themselves. This article reviews common wiring plans, addresses basic concepts of structured wiring systems, and discusses the importance and benefits of such a…

  10. Electronic conductance of quantum wire with serial periodic potential structures

    International Nuclear Information System (INIS)

    Fayad, Hisham M.; Shabat, Mohammed M.; Abdus Salam International Centre for Theoretical Physics, Trieste

    2000-08-01

    A theory based on the total transfer matrix is presented to investigate the electronic conductance in a quantum wire with serial periodic potentials. We apply the formalism in computation of the electronic conductance in a wire with different physical parameters of the wire structure. The numerical results could be used in designing some future quantum electronic devices. (author)

  11. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-01-01

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

  12. Hierarchical structures in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Godfrey, Andrew; Hansen, Niels

    2013-01-01

    The microstructure and crystallography of drawn pearlitic steel wires have been quantified by a number of electron microscopy techniques including scanning electron microscopy, transmission electron microscopy, electron backscatter diffraction and nanobeam diffraction, with focus on the change...... in the structure and crystallography when a randomly oriented cementite structure in a patented wire during wire drawing is transformed into a lamellar structure parallel to the drawing axis. Changes in the interlamellar spacing and in the misorientation angle along and across the ferrite lamellae show significant...... through-diameter variations in wires drawn to large strains P 1.5. The structural evolution is hierarchical as the structural variations have their cause in a different macroscopic orientation of the cementite in the initial (patented) structure with respect to the wire axis. The through...

  13. Method and apparatus for diamond wire cutting of metal structures

    Science.gov (United States)

    Parsells, Robert; Gettelfinger, Geoff; Perry, Erik; Rule, Keith

    2005-04-19

    A method and apparatus for diamond wire cutting of metal structures, such as nuclear reactor vessels, is provided. A diamond wire saw having a plurality of diamond beads with beveled or chamfered edges is provided for sawing into the walls of the metal structure. The diamond wire is guided by a plurality of support structures allowing for a multitude of different cuts. The diamond wire is cleaned and cooled by CO.sub.2 during the cutting process to prevent breakage of the wire and provide efficient cutting. Concrete can be provided within the metal structure to enhance cutting efficiency and reduce airborne contaminants. The invention can be remotely controlled to reduce exposure of workers to radioactivity and other hazards.

  14. Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.

    Science.gov (United States)

    Nylund, Gustav; Storm, Kristian; Lehmann, Sebastian; Capasso, Federico; Samuelson, Lars

    2016-02-10

    III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.

  15. Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

    Energy Technology Data Exchange (ETDEWEB)

    Sortica, Mauricio A.; Canut, Bruno; Chauvin, Nicolas [Institut des Nanotechnologies de Lyon INL-UMR5270, INSA - Lyon, CNRS, 7 av. Jean Capelle, 69621, Villeurbanne (France); Hatori, Masahiro; Dias, Johnny F. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul IF-UFRGS, av. Bento Goncalves 9500, 91501-970, Porto Alegre - RS (Brazil); Marty, Olivier [Institut des Nanotechnologies de Lyon INL-UMR5270, Universite Claude Bernard Lyon 1, 8 rue Andre-Marie Ampere, 69622, Villeurbanne (France)

    2015-12-15

    Si (100) wafers were implanted at 500 C with 250 keV As ions and 350 keV In ions in this order. The implantations were carried out with three different fluences, namely 1 x 10{sup 16}, 2 x 10{sup 16}, and 5 x 10{sup 16} cm{sup -2}. The samples were annealed with rapid thermal annealing (RTA) for 30 s at temperatures ranging from 800 up to 1000 C. Different techniques like photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) were employed to characterize the samples. Finally, scanning and transmission electron microscopy (SEM and TEM, respectively) provided further structural information of the InAs nanoclusters. The results indicate that InAs nanoprecipitates are formed after RTA treatment. Moreover, a broad photoluminescence peak was observed in all samples submitted to RTA. RBS results reveal that losses of implanted ions due to diffusion processes can be minimized through the use of RTA, depending of the fluence of ion implantation. Finally, the present results suggest that the photoluminescence yield depends on the degree of the radiation damage induced in the Si matrix during the implantation process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Structural and phase studies of stainless wire after electroplastic drawing

    International Nuclear Information System (INIS)

    Troitskij, O.A.; Baldokhin, Yu.V.; Kir'yanchev, N.E.; Ryzhkov, V.G.; Kalugin, V.D.; Sokolov, N.V.; Klekovkin, A.A.; Klevtsur, S.A.

    1983-01-01

    Structural and phase properties of the 12Kh18N10T steel wire are studied after usual and electroplastic drawing from 0.40 up to 0.11 mm with 18-22% reduction per pass with passing 250 A/mm 2 electric current. The earlier made observation on a sharp decrease in content of deformation-induced martensite of α-phase takes place in the wire from stainless metastable austenitic steel as a result of electroplastic drawing. Distribution of the remained α-phase by the wire cross section is established

  17. Structure of gold monoatomic wires connected to two electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zoubkoff, Remi [Centre de Recherche en Matiere Condensee et Nanosciences, CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9 (France)]. E-mail: zoubkoff@crmcn.univ-mrs.fr; Vega, L. de la [Departamento de Fisica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Martin-Rodero, A. [Departamento de Fisica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Levy Yeyati, A. [Departamento de Fisica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Saul, Andres [Centre de Recherche en Matiere Condensee et Nanosciences, CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9 (France)

    2007-09-01

    In this work, we present calculations concerning the stability of infinite monoatomic Au wires and finite Au wires between electrodes. For the systems with the electrodes, that we represent by FCC slabs with (0 0 1) surfaces, the total energy calculations have been performed with a spd non-orthogonal tight-binding Hamiltonian. For the infinite wires, the calculations were also compared to semi-empirical and first principle ones. For the infinite wires and small enough inter-atomic distances, we find that a zig-zag structure is most stable than the linear one, in agreement with previous calculations. For the system between electrodes, one gets an almost concave or a symmetric broken edges structure depending on the inter-atomic distance.

  18. Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

    International Nuclear Information System (INIS)

    Anyebe, E.A.; Zhuang, Q.; Lawson, S.; Robson, A.J.; Kolosov, O.; Sanchez, A.M.; Ponomarenko, L.; Zhukov, A.

    2014-01-01

    We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Structure and strength of sub-100 nm lamellar structures in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Hansen, Niels; Godfrey, Andrew

    2018-01-01

    Pearlitic steel wire, with a representative sub-100 nm lamellar structure, is the strongest mass-produced steel with an excellent combination of formability and strength. This overview summarises investigations of cold-drawn pearlitic steel wire in the last decades, covering the microstructural...... and performance of pearlitic steel wire to widen its use in society....

  20. Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 × 2-c(8 × 2)

    Science.gov (United States)

    de Padova, P.; Quaresima, C.; Perfetti, P.; Olivieri, B.; Richter, M. C.; Heckmann, O.; Zerrouki, M.; Pennesi, G.; Paoletti, A. M.; Rossi, G.; Hricovini, K.

    2006-03-01

    We investigated the electronic structure of ultra thin interface of organic titanium bis-phthalocyanine TiPc{2} deposited on InAs(001)(4× 2)c-(8× 2) clean surface, by means of high-resolution core-levels and valence band (VB) photoelectron spectroscopies. In4d, As3d, and C1s core levels were measured for different TiPc{2} thicknesses up to 1 monolayer. Surface core level shifts were found on both In4d and As3d core levels. These shifts originate from the interaction between 4× 2-c(8× 2) InAs reconstruction and organic molecules suggesting the presence of strong bounds. C1s core level exhibits a line shape attributed to the C-C and C-N bonds. The VB spectroscopy shows dramatic changes related to the interaction of the TiPc{2} molecule with the InAs related surface states.

  1. Energy Band Structure Studies Of Zinc-Blende GaAs and InAs ...

    African Journals Online (AJOL)

    Energy band structures, density of states and structural parameters of all the compounds are presented and discussed in context with available theoretical and experimental studies. Our results show that the energy band gaps of the semiconductors are underestimated. But overall our results show reasonable agreement ...

  2. Electronic fine structure and recombination dynamics in single InAs quantum dots

    International Nuclear Information System (INIS)

    Seguin, R.

    2008-01-01

    In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

  3. Electronic fine structure and recombination dynamics in single InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Seguin, R.

    2008-01-28

    In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

  4. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  5. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  6. Electrochemically synthesized Si nano wire arrays and thermoelectric nano structures

    International Nuclear Information System (INIS)

    Khuan, N.I.; Ying, K.K.; Nur Ubaidah Saidin; Foo, C.T.

    2012-01-01

    Thermoelectric nano structures hold great promise for capturing and directly converting into electricity some vast amount of low-grade waste heats now being lost to the environment (for example from nuclear power plant, fossil fuel burning, automotive and household appliances). In this study, large-area vertically-aligned silicon nano wire (SiNW) arrays were synthesized in an aqueous solution containing AgNO 3 and HF on p-type Si (100) substrate by self-selective electroless etching process. The etching conditions were systematically varied in order to achieve different stages of nano wire formation. Diameters of the SiNWs obtained varied from approximately 50 to 200 nm and their lengths ranged from several to a few tens of μm. Te/ Bi 2 Te 3 -Si thermoelectric core-shell nano structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO 2 + and Bi 3+ / HTeO 2 + ions. The reactions were basically a nano-electrochemical process due to the difference in redox potentials between the materials. the surface-modified SiNWs of core-shell structures had roughened surface morphologies and therefore, higher surface-t-bulk ratios compared to unmodified SiNWs. They have potential applications in sensors, photovoltaic and thermoelectric nano devices. Growth study on the SiNWs and core-shell nano structures produced is presented using various microscopy, diffraction and probe-based techniques for microstructural, morphological and chemical characterizations. (Author)

  7. Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

  8. Elastic properties and electron transport in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  9. The influence of drawing speed on structure changes in high carbon steel wires

    Directory of Open Access Journals (Sweden)

    M. Suliga

    2015-01-01

    Full Text Available In the paper the influence of the drawing speed on structure changes has been assessed. The Scanning Electron Microscope investigation confirmed that for wires drawn with high total draft, exceeding 80 %, makes it impossible to clearly assess the impact of drawing technology on structural changes in the drawn wires. Thus, to assess the structural changes necessary to apply quantitative methods. On the basis of examination of the wire structure by measuring of electrical resistance, the structure changes in drawn wires has been determined. It has been shown that the increase of drawing speed, especially above 15 m/s, causes an increase in structure defect, with a decline in platelet orientation of cementite in drawn wires.

  10. Evaluation of mechanical properties in metal wire mesh supported selective catalytic reduction (SCR) catalyst structures

    Science.gov (United States)

    Rajath, S.; Siddaraju, C.; Nandakishora, Y.; Roy, Sukumar

    2018-04-01

    The objective of this research is to evaluate certain specific mechanical properties of certain stainless steel wire mesh supported Selective catalytic reduction catalysts structures wherein the physical properties of the metal wire mesh and also its surface treatments played vital role thereby influencing the mechanical properties. As the adhesion between the stainless steel wire mesh and the catalyst material determines the bond strength and the erosion resistance of catalyst structures, surface modifications of the metal- wire mesh structure in order to facilitate the interface bonding is therefore very important to realize enhanced level of mechanical properties. One way to enhance such adhesion properties, the stainless steel wire mesh is treated with the various acids, i.e., chromic acid, phosphoric acid including certain mineral acids and combination of all those in various molar ratios that could generate surface active groups on metal surface that promotes good interface structure between the metal- wire mesh and metal oxide-based catalyst material and then the stainless steel wire mesh is dipped in the glass powder slurry containing some amount of organic binder. As a result of which the said catalyst material adheres to the metal-wire mesh surface more effectively that improves the erosion profile of supported catalysts structure including bond strength.

  11. GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

    Science.gov (United States)

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-02-01

    Type-II band alignment offers several advantages for proposed intermediate band solar cell structures. We focused on the quantum dot (QD) solar cell structures based on type-II InAs/GaAs QD layers capped with GaAsSb strain reducing layers. The GaAsSb strain reducing layers were prepared with or without graded Sb concentration. Strong enhancement of photocurrent was achieved by adding an InGaAs buffer layer under the type-II QD structure, thanks to improved electron extraction from QDs. For comparison, a structure with GaAs-capped InAs QDs was prepared, too. Properties of all structures are compared and the mechanism of carrier extraction or relaxation is discussed. Gradient of antimony concentration in a strain reducing layer (SRL) significantly improved resulting properties of solar cell structures. It is shown that in a multiple-QD structure with a GaAsSb SRL, electrons and holes have non-intersecting trajectories which prevents carrier recombination and improves the efficiency of solar cell structures. NextNano band structure calculations of different types of structures support our experimental results.

  12. Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Komarov, F.; Vlasukova, L.; Greben, M.; Milchanin, O. [Belarusian State University, Independence Ave. 4, 220030 Minsk (Belarus); Zuk, J., E-mail: jotzet@hektor.umcs.lublin.pl [Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland); Wesch, W.; Wendler, E. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Togambaeva, A. [Al-Farabi Kazakh National University, 71 Al-Farabi Ave., 050040 Almaty (Kazakhstan)

    2013-07-15

    We have studied the formation of InSb and InAs precipitates with sizes of several nanometers in Si and SiO{sub 2}/Si by means of implantation of (Sb + In) or (As + In) ions with energies from 170 to 350 keV and fluencies from 2.8 to 3.5 × 10{sup 16} cm{sup −2} at 500 °C and subsequent annealing at 1050–1100 °C for 3–30 min. RBS, TEM/TED, RS and PL techniques were employed to characterize the implanted layers. A broad band in the region of 1.2–1.6 μm has been registered in the low-temperature PL spectra of both (Sb + In) and (As + In) implanted and annealed silicon crystals. It was shown that structural and optical properties of oxidized silicon crystals strongly depend on type of implanted species in silicon crystals.

  13. The importance of carbon nanotube wire density, structural uniformity, and purity for fabricating homogeneous carbon nanotube–copper wire composites by copper electrodeposition

    Science.gov (United States)

    Sundaram, Rajyashree; Yamada, Takeo; Hata, Kenji; Sekiguchi, Atsuko

    2018-04-01

    We present the influence of density, structural regularity, and purity of carbon nanotube wires (CNTWs) used as Cu electrodeposition templates on fabricating homogeneous high-electrical performance CNT–Cu wires lighter than Cu. We show that low-density CNTWs (wires) with regular macro- and microstructures and high CNT content (>90 wt %) are essential for making homogeneous CNT–Cu wires. These homogeneous CNT–Cu wires show a continuous Cu matrix with evenly mixed nanotubes of high volume fractions (∼45 vol %) throughout the wire-length. Consequently, the composite wires show densities ∼5.1 g/cm3 (33% lower than Cu) and electrical conductivities ∼6.1 × 104 S/cm (>100 × CNTW conductivity). However, composite wires from templates with higher densities or structural inconsistencies are non-uniform with discontinuous Cu matrices and poor CNT/Cu mixing. These non-uniform CNT–Cu wires show conductivities 2–6 times lower than the homogeneous composite wires.

  14. Hierarchical structures in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Godfrey, Andrew; Hansen, Niels

    2013-01-01

    The microstructure and crystallography of drawn pearlitic steel wires have been quantified by a number of electron microscopy techniques including scanning electron microscopy, transmission electron microscopy, electron backscatter diffraction and nanobeam diffraction, with focus on the change...

  15. Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Arikan, Bulent, E-mail: bulentarikanx@gmail.com; Korkmaz, Melih; Aslan, Bulent; Serincan, Uğur

    2015-08-31

    In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically altered in each sample by changing the thickness of InAs (GaSb) layers from 9 to 7 monolayers (ML) for a fixed GaSb (InAs) layer at 9 ML (7 ML). The same InSb-like strain compensation interface was used for all samples. High resolution X-ray diffraction analysis, spectral responsivity and external quantum efficiency (QE) measurements were performed to express the effects of layer thickness variations on both structural and photodetector features. The decrease in the InAs thickness resulted in the increased mismatch from 0 to + 1626 ppm and the blue shift in the 50% cut-off wavelength (λ{sub c}) from 5.41 to 4.36 μm at 77 K. The additional decrease in GaSb thickness caused further increase in the mismatch up to + 1791 ppm. The steepness of the photoresponse at the absorption band edge was quantified and presented comparatively with different photodetector parameters and material properties for a complete picture. The highest optical response was obtained from sample having 8 ML InAs and 9 ML GaSb with λ{sub c} = 4.76 μm and QE = 23.7% at 4 μm. - Highlights: • Detailed growth conditions for InAs/GaSb SLs designed for infrared detection • Precisely engineering the λ{sub c} and the ∆a{sub ⊥}/a by controlling the SL layer thicknesses • InAs layer thickness changes are more effective than the GaSb on the λ{sub c} and ∆a{sub ⊥}/a.

  16. Electronic structures of one-dimension carbon nano wires and rings

    International Nuclear Information System (INIS)

    Ding, H; Maier, J P

    2007-01-01

    The electronic structures of one-dimension carbon nano wires, nano rings of C 10 to C 22 and hydrogen end-capped carbon nano wires of HC 2n H (n 8-13) have been investigated based on time-of-flight (TOF) mass spectroscopy, laser spectroscopy and first principle ab initio calculations. The size-selected carbon nano molecular wires and rings were investigated on-line using a two-color laser spectroscopic method. The ab initio predicts that the linear structures of the pure carbon nano molecular wires are about 3 eV higher in energy compared to those of the ring structures with similar size. The ring structure with bond length alternation (Peierls'dimerization) is unstable at size up to C 22 ring. The optical transition energies were calculated using the timedependent density functional theory (TD-DFT) and the CASSCF approach. For longer wires, it seems that the C 4n+2 wires are metallic and the hydrogen end-capped carbon wires could be semiconductors

  17. Hierarchical Structure and Strengthening Mechanisms in Pearlitic Steel Wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Hansen, Niels; Huang, Xiaoxu

    Microstructure evolution and strengthening mechanisms have been analyzed in a cold-drawn pearlitic steel wire (the strongest engineering materials in the world) with a nanostructure down to 10 nm and a flow stress up to 5.4 GPa. The interlamellar spacing and the cementite lamellae thickness...... are reduced during drawing in accordance with the change in wire diameter up to a strain of 2.5. At a higher strain enhanced thinning of cementite lamellae points to decomposition and carbon enrichment of the ferrite lamellae. Dislocations are stored as individual dislocations and in low angle boundaries...

  18. Structure and Properties of Coatings Made with Self Shielded Cored Wire

    Directory of Open Access Journals (Sweden)

    Gucwa M.

    2016-09-01

    Full Text Available The welding technologies are widely used for design of protection layer against wear and corrosion. Hardfacing, which is destined for obtaining coatings with high hardness, takes special place in these technologies. One of the most effective way of hardfacing is using self shielded flux cored arc welding (FCAW-S. Chemical composition obtained in flux cored wire is much more rich in comparison to this obtained in solid wire. The filling in flux cored wires can be enriched for example with the mixture of hard particles or phases with specified ratio, which is not possible for solid wires. This is the reason why flux cored wires give various possibilities of application of this kind of filler material for improving surface in mining industry, processing of minerals, energetic etc. In the present paper the high chromium and niobium flux cored wire was used for hardfacing process with similar heat input. The work presents studies of microstructures of obtained coatings and hardness and geometric properties of them. The structural studies were made with using optical microscopy and X-ray diffraction that allowed for identification of carbides and other phases obtained in the structures of deposited materials. Investigated samples exhibit differences in coating structures made with the same heat input 4,08 kJ/mm. There are differences in size, shape and distribution of primary and eutectic carbides in structure. These differences cause significant changes in hardness of investigated coatings.

  19. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

    International Nuclear Information System (INIS)

    Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

    2005-01-01

    We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

  20. Identification of Ina proteins from Fusarium acuminatum

    Science.gov (United States)

    Scheel, Jan Frederik; Kunert, Anna Theresa; Pöschl, Ulrich; Fröhlich-Nowoisky, Janine

    2015-04-01

    Freezing of water above -36° C is based on ice nucleation activity (INA) mediated by ice nucleators (IN) which can be of various origins. Beside mineral IN, biological particles are a potentially important source of atmospheric IN. The best-known biological IN are common plant-associated bacteria. The IN activity of these bacteria is induced by a surface protein on the outer cell membrane, which is fully characterized. In contrast, much less is known about the nature of fungal IN. The fungal genus Fusarium is widely spread throughout the earth. It belongs to the Ascomycota and is one of the most severe fungal pathogens. It can affect a variety of organisms from plants to animals including humans. INA of Fusarium was already described about 30 years ago and INA of Fusarium as well as other fungal genera is assumed to be mediated by proteins or at least to contain a proteinaceous compound. Although many efforts were made the precise INA machinery of Fusarium and other fungal species including the proteins and their corresponding genes remain unidentified. In this study preparations from living fungal samples of F. acuminatum were fractionated by liquid chromatography and IN active fractions were identified by freezing assays. SDS-page and de novo sequencing by mass spectrometry were used to identify the primary structure of the protein. Preliminary results show that the INA protein of F. acuminatum is contained in the early size exclusion chromatography fractions indicating a high molecular size. Moreover we could identify a single protein band from IN active fractions at 130-145 kDa corresponding to sizes of IN proteins from bacterial species. To our knowledge this is for the first time an isolation of a single protein from in vivo samples, which can be assigned as IN active from Fusarium.

  1. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    International Nuclear Information System (INIS)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.

    2007-01-01

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J. [ICMUV, Universitat de Valencia, Ed. Investigacio, 46100 Burjassot (Spain); Fuster, D. [ICMUV, Universitat de Valencia, Ed. Investigacio, 46100 Burjassot (Spain); Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Gonzalez, Y.; Gonzalez, L. [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)

    2007-01-15

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Intrinsic quantum dots in InAs nanowires

    International Nuclear Information System (INIS)

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  4. THE STRUCTURE ANALYTICAL RESEARCH OF POROUS PERMEABLE WIRE MATERIAL (in Russian

    Directory of Open Access Journals (Sweden)

    Andrzej JAKUBOWSKI

    2016-04-01

    Full Text Available The details of making technology of porous permeable material with use of wire are allowed to carry out the analytical research of structure and structural characteristics of wire winding body. Its permit for prognostication the final proper-ties of material, that is produced by the following deformation treatment (diameter reduction. Due to the regular orga-nized arrangement of wire, the coil of winding body is considered as a multispan continuous beam, but a contact of coils – as interaction of two cylinders. Possibility of exactly calculation of the contacts between coils is allowed to go over the single fragment displacements into deformation of whole winding body. During research of deformation processes in regards of winding body geometry and used wire mechanical properties, the structural characteristics of porous permea-ble wire material are expected. The optimal number of winding layers, eliminating the distortion of organized final struc-ture, is established. The material pressure–compactness relation is obtained in order to control the technological condi-tions of winding and drafting for guarantee the product required properties.

  5. Non-destructive X-ray examination of weft knitted wire structures

    Science.gov (United States)

    Obermann, M.; Ellouz, M.; Aumann, S.; Martens, Y.; Bartelt, P.; Klöcker, M.; Kordisch, T.; Ehrmann, A.; Weber, M. O.

    2016-07-01

    Conductive yarns or wires are often integrated in smart textiles to enable data or energy transmission. In woven fabrics, these conductive parts are fixed at defined positions and thus protected from external loads. Knitted fabrics, however, have relatively loose structures, resulting in higher impacts of possible mechanical forces on the individual yarns. Hence, metallic wires with smaller diameters in particular are prone to break when integrated in knitted fabrics. In a recent project, wires of various materials including copper, silver and nickel with diameters varying between 0.05 mm and 0.23 mm were knitted in combination with textile yarns. Hand flat knitting machines of appropriate gauges were used to produce different structures. On these samples, non-destructive examinations, using an industrial X-ray system Seifert x|cube (225 kV) equipped with a minifocus X-ray tube, were carried out, directly after knitting as well as after different mechanical treatments (tensile, burst, and washing tests). In this way, structural changes of the stitch geometry could be visualized before failure. In this paper, the loop geometries in the knitted fabrics are depicted depending on knitted structures, wire properties and the applied mechanical load. Consequently, it is shown which metallic wires and yarns are most suitable to be integrated into knitted smart textiles.

  6. Electron transport in InAs nanowires and heterostructure nanowire devices

    Science.gov (United States)

    Thelander, C.; Björk, M. T.; Larsson, M. W.; Hansen, A. E.; Wallenberg, L. R.; Samuelson, L.

    2004-09-01

    Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states.

  7. Radar micro-Doppler of wind turbines : Simulation and analysis using rotating linear wire structures

    NARCIS (Netherlands)

    Krasnov, O.A.; Yarovoy, A.

    2015-01-01

    A simple electromagnetic model of wind-turbine's main structural elements as the linear wired structures is developed to simulate the temporal patterns of observed radar return Doppler spectra (micro-Doppler). Using the model, the micro-Doppler for different combinations of the turbines rotation

  8. Optical emission of InAs nanowires

    International Nuclear Information System (INIS)

    Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

    2012-01-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

  9. Optical emission of InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

    2012-09-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

  10. Structural Parameters and Strengthening Mechanisms in Cold-Drawn Pearlitic Steel Wires

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Godfrey, Andy; Huang, Xiaoxu

    2012-01-01

    Pearlitic steel wires have a nanoscale structure and a strength which can reach 5 GPa. In order to investigate strengthening mechanisms, structural parameters including interlamellar spacing, dislocation density and cementite decomposition, have been analyzed by transmission electron microscopy...... and high resolution electron microscopy in wires cold drawn up to a strain of 3.7. Three strengthening mechanisms, namely boundary strengthening, dislocation strengthening and solid solution hardening have been analyzed and good agreement has been found between the measured flow stress and the value...

  11. Micro laser metal wire deposition for additive manufacturing of thin-walled structures

    Science.gov (United States)

    Demir, Ali Gökhan

    2018-01-01

    In this work, the micro laser metal wire deposition (μLMWD) process is studied as an additive manufacturing process for manufacturing thin walled structures with high aspect ratio. The developed μLMWD system consisted of a flash-pumped Nd:YAG laser source operating with ms-long pulses and an in-house developed wire feeding system. Processing conditions were investigated for single and multi-layer deposition in terms of geometry, microhardness and material use efficiency. Thin-walled structures with aspect ratio up to 20 were manufactured successfully, where layer width was between 700 and 800 μm. In multi-layer deposition conditions, the material use efficiency was observed to be close to 100%. The microhardness over the build direction was homogenous. The results show that the μLMWD process yields geometrical resolution close to powder-bed additive manufacturing processes, while maintaining the benefits of using wire feedstock.

  12. Recovery and residual stress of SMA wires and applications for concrete structures

    International Nuclear Information System (INIS)

    Choi, Eunsoo; Cho, Sung-Chul; Park, Taehyo; Hu, Jong Wan; Chung, Young-Soo

    2010-01-01

    In general, NiTi shape memory alloys are used for applications in civil structures. NiTi SMAs show good superelasticity and shape memory effect properties. However, for application of the shape memory effect, it is desirable for SMAs to show a wide temperature hysteresis, especially for civil structures which are exposed to severe environmental conditions. NiTiNb SMAs, in general, show a wider temperature hysteresis than NiTi SMAs and are more applicable for civil structures. This study examines the temperature hysteresis of NiTiNb and NiTi SMAs, and their recovery and residual stress are investigated. In addition, the tensile behaviors of SMA wires under residual stress are evaluated. This study explains the possible applications for concrete structures with the shape memory effect and illustrates two experimental results of concrete cylinders and reinforced concrete columns. For both tests, SMA wires of NiTiNb and NiTi are used to confine concrete using residual stress. The SMA wire jackets on the concrete cylinders increase the peak strength and the ductility compared to the plain concrete cylinders. In addition, the SMA wire jackets on reinforced concrete columns increase the ductility greatly without flexural strength degradation

  13. Cavitation and formation of foam-like structures inside exploding wires

    Science.gov (United States)

    Zhakhovsky, Vasily V.; Pikuz, Sergei A.; Tkachenko, Svetlana I.; Sasorov, Pavel V.; Shelkovenko, Tatiana A.; Knapp, Patrick F.; Saylor, Charles C.; Hammer, David A.

    2012-03-01

    Large-scale molecular dynamics (MD) simulations are used to study explosions of aluminum wires heated by electric current pulses. It is shown that the observed nonuniform radial expansion of the heated wire is associated with a liquid-vapor phase transition, which is caused by convergence of a radial tensile wave towards the center of the wire. Tension within the wave leads to cavitation in stretched melt that subsequently forms into a low-density foam-like material surrounded by a dense liquid shell. The foam decays into liquid droplets before the outer shell breaks apart. Simulated density profiles demonstrate good qualitative agreement with experimental high-resolution X-ray images showing the complex hollow structures within the long-living dense core.

  14. Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

    International Nuclear Information System (INIS)

    Grenier, S.; Letoublon, A.; Proietti, M.G.; Renevier, H.; Gonzalez, L.; Garcia, J.M.; Priester, C.; Garcia, J.

    2003-01-01

    We have studied self-organized quantum wires of InAs, grown by molecular beam epitaxy onto a InP(0 0 1) substrate, by means of grazing incidence diffraction anomalous fine structure (DAFS). The equivalent quantum wires thickness is 2.5 monolayers. We measured the (4 4 0) and (4 2 0) GIDAFS spectra, at the As K-edge, keeping the incidence and exit angles close to the InP critical angle. The analysis of both the smooth and oscillatory contributions of the DAFS spectrum, provide valuable information about composition and strain inside the quantum wires and close to the interface. We also show preliminary results on InAs wires encapsulated by a 40 A thick InP capping layer, suggesting the DAFS capability of probing different iso-strain regions of the wires

  15. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    Science.gov (United States)

    Travelli, A.

    1985-10-25

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  16. Atomic resolution imaging of in situ InAs nanowire dissolution at elevated temperature

    DEFF Research Database (Denmark)

    Pennington, Robert S.; Jinschek, Joerg; Wagner, Jakob Birkedal

    2010-01-01

    We present a preliminary study of the in situ heating of InAs nanowires in a gaseous environment in an environmental transmission electron microscope Nanowire dissolution, accompanied by dynamic reshaping of crystalline Au-containing catalyst particles at the ends of the wires, is observed...

  17. Hebbian Wiring Plasticity Generates Efficient Network Structures for Robust Inference with Synaptic Weight Plasticity

    Science.gov (United States)

    Hiratani, Naoki; Fukai, Tomoki

    2016-01-01

    In the adult mammalian cortex, a small fraction of spines are created and eliminated every day, and the resultant synaptic connection structure is highly nonrandom, even in local circuits. However, it remains unknown whether a particular synaptic connection structure is functionally advantageous in local circuits, and why creation and elimination of synaptic connections is necessary in addition to rich synaptic weight plasticity. To answer these questions, we studied an inference task model through theoretical and numerical analyses. We demonstrate that a robustly beneficial network structure naturally emerges by combining Hebbian-type synaptic weight plasticity and wiring plasticity. Especially in a sparsely connected network, wiring plasticity achieves reliable computation by enabling efficient information transmission. Furthermore, the proposed rule reproduces experimental observed correlation between spine dynamics and task performance. PMID:27303271

  18. Hebbian Wiring Plasticity Generates Efficient Network Structures for Robust Inference with Synaptic Weight Plasticity.

    Science.gov (United States)

    Hiratani, Naoki; Fukai, Tomoki

    2016-01-01

    In the adult mammalian cortex, a small fraction of spines are created and eliminated every day, and the resultant synaptic connection structure is highly nonrandom, even in local circuits. However, it remains unknown whether a particular synaptic connection structure is functionally advantageous in local circuits, and why creation and elimination of synaptic connections is necessary in addition to rich synaptic weight plasticity. To answer these questions, we studied an inference task model through theoretical and numerical analyses. We demonstrate that a robustly beneficial network structure naturally emerges by combining Hebbian-type synaptic weight plasticity and wiring plasticity. Especially in a sparsely connected network, wiring plasticity achieves reliable computation by enabling efficient information transmission. Furthermore, the proposed rule reproduces experimental observed correlation between spine dynamics and task performance.

  19. Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy

    Science.gov (United States)

    Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Richard, Olivier; Bender, Hugo; Mols, Yves; Vila, María; Rubio-Zuazo, Juan; Castro, Germán R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc

    2017-12-01

    The mechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs nanowire (NW) grown by selective area epitaxy (SAE) is studied. We demonstrate that the crystal structure in InAs NW grown by SAE can be controlled using basic growth parameters, and wurtzitelike InAs NWs are achieved. We link the polytypic InAs NWs SAE to the reconstruction of the growth front (111)B surface. Surface reconstruction study of InAs (111) substrate and the following homoepitaxy experiment suggest that (111) planar defect nucleation is related to the (1 × 1) reconstruction of InAs (111)B surface. In order to reveal it more clearly, a model is presented to correlate growth temperature and arsenic partial pressure with InAs NW crystal structure. This model considers the transition between (1 × 1) and (2 × 2) surface reconstructions in the frame of adatom atoms adsorption/desorption, and the polytypism is thus linked to reconstruction quantitatively. The experimental data fit well with the model, which highly suggests that surface reconstruction plays an important role in the polytypism phenomenon in InAs NWs SAE.

  20. Radiation excited by a charged-particle bunch on a planar periodic wire structure

    Directory of Open Access Journals (Sweden)

    Andrey V. Tyukhtin

    2014-12-01

    Full Text Available The electromagnetic field of a bunch moving in the presence of a plane grid composed of thin parallel wires is considered by using the averaged boundary conditions method. Two different cases of motion are examined. In the first one, the bunch moves at a constant distance from the grid orthogonally to the wires. The excited surface wave is presented in the form of a spectral integral for a thin bunch with an arbitrary longitudinal profile. The wave propagates along the wires and does not decay with distance (if dissipation is negligible. Energy losses of the bunch over a unit path are obtained. In the second case, the bunch orthogonally crosses the wire grid. The volume and surface waves are separately analyzed. Properties of the spectral angular density of energy of volume radiation in the far-field zone are described. The energy losses due to the volume and surface radiation are determined. It is demonstrated that the structure of the surface waves in both cases allows determination of the length of the bunch.

  1. Radiation and scattering by thin-wire structures in the complex frequency domain. [electromagnetic theory for thin-wire antennas

    Science.gov (United States)

    Richmond, J. H.

    1974-01-01

    Piecewise-sinusoidal expansion functions and Galerkin's method are employed to formulate a solution for an arbitrary thin-wire configuration in a homogeneous conducting medium. The analysis is performed in the real or complex frequency domain. In antenna problems, the solution determines the current distribution, impedance, radiation efficiency, gain and far-field patterns. In scattering problems, the solution determines the absorption cross section, scattering cross section and the polarization scattering matrix. The electromagnetic theory is presented for thin wires and the forward-scattering theorem is developed for an arbitrary target in a homogeneous conducting medium.

  2. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs /InAs1 -xSbx

    Science.gov (United States)

    Liu, Henan; Zhang, Yong; Steenbergen, Elizabeth H.; Liu, Shi; Lin, Zhiyuan; Zhang, Yong-Hang; Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch; Dupuis, Russell D.; Kim, Jin K.; Hawkins, Samuel D.; Klem, John F.

    2017-09-01

    The InAs /InAs1 -xSbx superlattice system distinctly differs from two well-studied superlattice systems GaAs /AlAs and InAs /GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs /InAs1 -xSbx system when compared to the other two systems. In this work, we report a polarized Raman study of the vibrational properties of the InAs /InAs1 -xSbx superlattices (SLs) as well as selected InAs1 -xSbx alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like "forbidden" LO mode is observed in two parallel-polarization configurations. The InAs1 -xSbx alloys lattice matched to the substrate (xSb˜0.09 ) grown by MBE are also found to exhibit the forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (xSb˜0.35 ) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs /InAs1 -xSbx and InAs /GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of the forbidden LO-like mode is a universal signature for SLs and bulk systems resulting from the mixing of phonon modes due to structural

  3. GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-01-01

    Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. ISSN 2053-1591 R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠk(CZ) LO1603 Institutional support: RVO:68378271 Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.068, year: 2016

  4. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  5. A starfish robot based on soft and smart modular structure (SMS) actuated by SMA wires.

    Science.gov (United States)

    Jin, Hu; Dong, Erbao; Alici, Gursel; Mao, Shixin; Min, Xu; Liu, Chunshan; Low, K H; Yang, Jie

    2016-09-09

    This paper describes the design, fabrication and locomotion of a starfish robot whose locomotion principle is derived from a starfish. The starfish robot has a number of tentacles or arms extending from its central body in the form of a disk, like the topology of a real starfish. The arm, which is a soft and composite structure (which we call the smart modular structure (SMS)) generating a planar reciprocal motion with a high speed of response upon the actuation provided by the shape memory alloy (SMA) wires, is fabricated from soft and smart materials. Based on the variation in the resistance of the SMA wires during their heating, an adaptive regulation (AR) heating strategy is proposed to (i) avoid overheating of the SMA wires, (ii) provide bending range control and (iii) achieve a high speed of response favorable to successfully propelling the starfish robot. Using a finite-segment method, a thermal dynamic model of the SMS is established to describe its thermal behavior under the AR and a constant heating strategy. A starfish robot with five SMS tentacles was tested with different control parameters to optimize its locomotion speed. As demonstrated in the accompanying video file, the robot successfully propelled in semi-submerged and underwater environments show its locomotion ability in the multi-media, like a real starfish. The propulsion speed of the starfish robot is at least an order of magnitude higher than that of those reported in the literature-thanks to the SMS controlled with the AR strategy.

  6. Homogenization of structured metasurfaces and uniaxial wire medium metamaterials for microwave applications

    Science.gov (United States)

    Kaipa, Chandra S. R.

    In recent years, the study of electromagnetic wave interaction with artificial media has been the subject of intense research interest due to their extraordinary properties such as negative refraction, partial focusing, enhanced transmission, and spatial filtering, among others. Artificial media are crystals of various periodic metallic inclusions with dimensions of the order of λ/10 - λ/4. When compared to natural materials, the inclusions are, thus, not as small in terms of the wavelength, even in the optical band. Therefore, one should expect the electrodynamics of these media to be inherently non-local, characterized by strong spatial dispersion effects. The dissertation includes two parts and focuses on the electromagnetic wave propagation in metamaterials formed by stacked metasurfaces and structured wire media. In the first part, we propose physical systems that mimic the observed behavior of stacked metal-dielectric layers at optical frequencies, but in the microwave region of the spectrum using stacked metascreens, and at low-THz using graphene-dielectric stack. The analysis is carried out using simple analytical circuit model or transfer matrix method with the homogenized impedance for the metasurfaces. The physical mechanisms of the observed behavior is clearly explained in terms of the open/coupled Fabry-Pérot resonators. The methodology can be useful in the design of wideband planar filters based on these metasurfaces with a specific response. The second part focuses on the development of homogenization models for wire medium loaded with arbitrary impedance insertions and metallic patches, to characterize negative refraction, partial focusing, and subwavelength imaging. We propose a new concept of suppressing the spatial dispersion effects in the wire media by employing lumped inductive loads. Based on the proposed concept, we demonstrate an ultra-thin structure which exhibits indefinite dielectric response, all-angle negative refraction and high

  7. Analysis of ultra-relativistic charged particle beam and stretched wire measurement interactions with cylindrically symmetric structures

    International Nuclear Information System (INIS)

    Deibele, C.E.

    1996-01-01

    The beam impedance and wakefield are quantities which describe the stability of charged particles in their trajectory within an accelerator. The stretched wire measurement technique is a method which estimates the beam impedance and wakefield. Definitions for the beam impedance, the wakefield, and the stretched wire measurement are presented. A pillbox resonator with circular beampipes is studied for its relatively simple profile and mode structure. Theoretical predictions and measurement data are presented for the interaction of various charged particle beams and center conductor geometries between the cavity and beampipe. Time domain predictions for the stretched wire measurement and wakefield are presented and are shown to be a linear interaction

  8. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  9. Structural and superconducting properties of PIT processed sintered MgB{sub 2}/Fe wires

    Energy Technology Data Exchange (ETDEWEB)

    Balamurugan, S.; Nakamura, T.; Osamura, K.; Muta, I.; Hoshino, T

    2004-10-01

    In this paper, we report the structural and superconducting properties of MgB{sub 2}/Fe wires that are produced by different sintering conditions. Good quality MgB{sub 2}/Fe wires are fabricated by the powder-in-tube (PIT) method using commercially available MgB{sub 2} powder at ambient pressure. In order to check the annealing effect, the different pieces of the as-rolled wires are sintered at 1323 K for 0.30-1.20 ks. XRD data confirms that they are hexagonal MgB{sub 2} structure. All the sintered samples show higher T{sub c} values in the range of 38.2-38.4 K with high J{sub c} than the as-rolled sample. No significant change in T{sub c} is seen among the annealed samples. On the other hand, the annealed samples show significant change in the J{sub c} values as well as in micro-structural features due to variable sintering time. On annealing at 1323 K for 0.60 ks, we obtain the best quality sample with a J{sub c} of 372 A/mm{sup 2} at 33.1 K in self-field with a maximum T{sub c} of 38.4 K. Among the annealed samples, 1.20 ks sample shows lower J{sub c}. Longer annealing time reduced J{sub c}, indicating a possible interfacial reaction between the Fe sheath and the MgB{sub 2} core.

  10. Control of flow structure in the wake region of circular cylinder with meshy wire in deep water

    Directory of Open Access Journals (Sweden)

    Burcu Oğuz

    2016-08-01

    Full Text Available In this study the aim is decreasing the effect and the intensity of the temporary loads resulted from vortex shedding that have an impact on the cylinder (chimneys, high buildings etc. located in deep water and the object or objects in the wake region and definition of the optimum values (wire thickness and porosity β With different thickness and different porosity ratios the effect of meshy wire that surrounded a circular cylinder of D=50 mm diameter was observed at Re_D=5000. The porosity ratios were four different values between a range of β=0.5-0.8 with an interval of 0.1. The thicknesses of wire were 1 mm, 2 mm, 3 mm and 4 mm. The flow structure in the wake region of circular cylinder was tried to be controlled by meshy wire that surrounded the cylinder. Experiments were carried out by using particle image velocimetry (PIV technique. Comparing with bare cylinder results, turbulence kinetic energy (TKE and Reynolds shear stress values increase with wire thicknesses of b=1 mm, 2 mm for all porosity ratios and decrease with b=3 mm, 4 mm. With porosity ratio of β=0.6 and wire thickness of b=4 mm TKE and Reynolds shear stress results show that meshy wire controls the flow in the wake region of the cylinder. Frequency value results also define that best flow control is obtained with β=0.6 and b=4 mm.

  11. Investigations on stratification structure parameters formed from electrical exploding wires in vacuum

    Science.gov (United States)

    Wu, Jian; Lu, Yihan; Li, Xingwen; Zhang, Daoyuan; Qiu, Aici

    2017-11-01

    The density distribution and the energy deposition in dark and light transverse layers from stratification structures were measured and analyzed from electrical exploding wire experiments in vacuum. It is demonstrated that the differences in the areal density of the dark layer and light layer regions were about 2 × 1017/cm2 at 296 ns after voltage collapsed. This difference corresponded to an energy deposition difference of ˜2 eV/atom between the dark and light layers, which likely arises from a ±10% resistivity perturbation during the explosion, as suggested by combining a gas column expansion model and a thermodynamic model.

  12. New Structure Design and Simulation of Brake by Wire System Based on Giant-magnetostrictive Material

    Directory of Open Access Journals (Sweden)

    Changbao CHU

    2014-04-01

    Full Text Available Existing electronic mechanical brake by wire system has several disadvantages. For instance, system actuators are complex, response speed slower, larger vibration noise, etc. This paper discusses a new type brake by wire system based on giant-magnetostrictive material. The new type brake by wire system model was set up under Matlab/Simulink software environment. PID control method was used to control the brake by wire system. Simulation results shows that the new type brake by wire system achieves better braking performance compared with hydraulic braking system. This work provides a new idea for researching automobile brake by wire system.

  13. Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire

    DEFF Research Database (Denmark)

    Nguyen, H.A.; Grange, T.; Malik, N.S.

    2017-01-01

    Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.......Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons....

  14. Structural, magnetic, and lattice-dynamical interface properties of epitactical iron films on InAs(001) and GaAs(001) substrates; Strukturelle, magnetische und gitterdynamische Grenzflaecheneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Peters, Robert

    2009-07-14

    In this thesis the structure, magnetism and interface properties of ferromagnet-semiconductor hybrid structures were investigated. The main goal of this thesis was to obtain information on physical properties at the interface between a ferromagnetic metal and a III-V semiconductor (SC). For this purpose Fe films that serve as ferromagnetic contacts were deposited in ultrahigh vacuum (UHV) on InAs(001) and GaAs(001) substrates, respectively, and investigated. Both systems are interesting model systems with respect to electrical spin injection from a ferromagnetic metal into a semiconductor. In order for spin injection to occur, it is known that a Schottky barrier must form at the Fe/SC interface. Film growth and film structure were investigated in-situ in UHV by electron diffraction (RHEED) and ex-situ by X-ray diffraction. For determining the magnetic properties {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS) combines with {sup 57}Fe probe-layer technique was employed at different temperatures. Further, the partial Fe phonon density of states (PDOS) at the Fe/InAs (001) interface was determined by nuclear resonant inelastic X-ray scattering (NRIXS) from a {sup 57}Fe probe-layer. The CEM spectra (at room temperature) provided relatively high values of the average hyperfine magnetic field of left angle B{sub hf} right angle {proportional_to} 27 T and of the most-probable hyperfine magnetic field of B{sub hf,} {sub peak} {proportional_to} 30 T. This provides evidence for relativ high average Fe magnetic moments of {proportional_to} 1.8 {mu}{sub B}. The partial Fe phonon density of states (PDOS) at the Fe/InAs(001) interface is remarkably modified as compared to that of bulk bcc Fe. Using magnetometry and {sup 57}Fe CEMS, a strong temperature dependent magnetization directions was observed for Fe/Tb multilayers on InAs(001). Furthermore it is shown that such Fe/Tb multilayers on p-InAs(001) with perpendicular spin texture are useful as potential

  15. InAs based terahertz quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael; Schönhuber, Sebastian; Unterrainer, Karl [Photonics Institute and Center for Micro- and Nanostructures, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Vienna (Austria); Zederbauer, Tobias; Schrenk, Werner; Andrews, Aaron Maxwell; Strasser, Gottfried [Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universität Wien, Floragasse 7, 1040 Vienna (Austria); Detz, Hermann [Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Vienna (Austria)

    2016-01-04

    We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.

  16. Structural and phase transformations in zinc and brass wires under heating with high-density current pulse

    Energy Technology Data Exchange (ETDEWEB)

    Pervikov, A. V. [Laboratory of Physical Chemistry of Ultrafine Materials, Institute of Strength Physics and Materials Science, 2/4, pr. Akademicheskii, 634021 Tomsk, Russia and Department of High Voltage Electrophysics and High Current Electronics, Tomsk Polytechnic University, 30 Lenin Avenue, 634050 Tomsk (Russian Federation)

    2016-06-15

    The work is focused on revealing the mechanism of structure and phase transformations in the metal wires under heating with a high-density current pulse (the electric explosion of wires, EEWs). It has been demonstrated on the example of brass and zinc wires that the transition of a current pulse with the density of j ≈ 3.3 × 10{sup 7} A/cm{sup 2} results in homogeneous heating of the crystalline structure of the metal/alloy. It has been determined that under heating with a pulse of high-density current pulse, the electric resistance of the liquid phases of zinc and brass decreases as the temperature increases. The results obtained allow for a conclusion that the presence of the particles of the condensed phase in the expanding products of EEW is the result of overheating instabilities in the liquid metal.

  17. Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

    Science.gov (United States)

    Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

    2008-08-01

    Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.

  18. Electrical characterisation of Sn doped InAs grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2008-07-01

    The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10{sup 17} and 4.7 x 10{sup 19} cm{sup -3} with 77 K mobilities ranging from 12 000 to 1300 cm{sup 2}/Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Using Powder Cored Tubular Wire Technology to Enhance Electron Beam Freeform Fabricated Structures

    Science.gov (United States)

    Gonzales, Devon; Liu, Stephen; Domack, Marcia; Hafley, Robert

    2016-01-01

    Electron Beam Freeform Fabrication (EBF3) is an additive manufacturing technique, developed at NASA Langley Research Center, capable of fabricating large scale aerospace parts. Advantages of using EBF3 as opposed to conventional manufacturing methods include, decreased design-to-product time, decreased wasted material, and the ability to adapt controls to produce geometrically complex parts with properties comparable to wrought products. However, to fully exploit the potential of the EBF3 process development of materials tailored for the process is required. Powder cored tubular wire (PCTW) technology was used to modify Ti-6Al-4V and Al 6061 feedstock to enhance alloy content, refine grain size, and create a metal matrix composite in the as-solidified structures, respectively.

  20. An Efficient Framework for Analysis of Wire-Grid Shielding Structures over a Broad Frequency Range

    Directory of Open Access Journals (Sweden)

    A. Karwowski

    2016-12-01

    Full Text Available A computationally efficient MoM-based framework for broadband electromagnetic simulation of wire-grid shielding structures is presented in the paper. Broadband capability of the approach is attained through supporting MoM by an adaptive frequency sweep combined with rational interpolation of the observable implemented via Stoer-Bulirsch algorithm. The performance increase is gained by employing CUDA-enabled CPU+GPU co-processing. For large-size problems exceeding the amount of memory available on the GPU device, a hybrid out-of-GPU memory LU decomposition algorithm is employed. The demonstration examples are provided to illustrate the the accuracy and high efficiency of the approach.

  1. Fabrication, Structural Characterization and Uniaxial Tensile Properties of Novel Sintered Multi-Layer Wire Mesh Porous Plates.

    Science.gov (United States)

    Duan, Liuyang; Zhou, Zhaoyao; Yao, Bibo

    2018-01-17

    There is an increasing interest in developing porous metals or metallic foams for functional and structural applications. The study of the physical and mechanical properties of porous metals is very important and helpful for their application. In this paper, a novel sintered multilayer wire mesh porous plate material (WMPPs) with a thickness of 0.5 mm-3 mm and a porosity of 10-35% was prepared by winding, pressing, rolling, and subsequently vacuum sintering them. The pore size and total size distribution in the as-prepared samples were investigated using the bubble point method. The uniaxial tensile behavior of the WMPPs was investigated in terms of the sintering temperature, porosity, wire diameter, and manufacturing technology. The deformation process and the failure mechanism under the tensile press was also discussed based on the appearance of the fractures (SEM figures). The results indicated that the pore size and total size distribution were closely related to the raw material used and the sintering temperature. For the WMPPs prepared by the wire mesh, the pore structures were inerratic and the vast majority of pore size was less than 10 μm. On the other hand, for the WMPPs that were prepared by wire mesh and powder, the pore structures were irregular and the pore size ranged from 0 μm-50 μm. The experimental data showed that the tensile strength of WMPPs is much higher than any other porous metals or metallic foams. Higher sintering temperatures led to coarser joints between wires and resulted in higher tensile strength. The sintering temperature decreased from 1330 °C to 1130 °C and the tensile strength decreased from 296 MPa to 164 MPa. Lower porosity means that there are more metallurgical joints and metallic frameworks resisting deformation per unit volume. Therefore, lower porosities exhibit higher tensile strength. An increase of porosity from 17.14% to 32.5% led to the decrease of the tensile strength by 90 MPa. The coarser wires led to a bigger

  2. Fabrication, Structural Characterization and Uniaxial Tensile Properties of Novel Sintered Multi-Layer Wire Mesh Porous Plates

    Directory of Open Access Journals (Sweden)

    Liuyang Duan

    2018-01-01

    Full Text Available There is an increasing interest in developing porous metals or metallic foams for functional and structural applications. The study of the physical and mechanical properties of porous metals is very important and helpful for their application. In this paper, a novel sintered multilayer wire mesh porous plate material (WMPPs with a thickness of 0.5 mm–3 mm and a porosity of 10–35% was prepared by winding, pressing, rolling, and subsequently vacuum sintering them. The pore size and total size distribution in the as-prepared samples were investigated using the bubble point method. The uniaxial tensile behavior of the WMPPs was investigated in terms of the sintering temperature, porosity, wire diameter, and manufacturing technology. The deformation process and the failure mechanism under the tensile press was also discussed based on the appearance of the fractures (SEM figures. The results indicated that the pore size and total size distribution were closely related to the raw material used and the sintering temperature. For the WMPPs prepared by the wire mesh, the pore structures were inerratic and the vast majority of pore size was less than 10 μm. On the other hand, for the WMPPs that were prepared by wire mesh and powder, the pore structures were irregular and the pore size ranged from 0 μm–50 μm. The experimental data showed that the tensile strength of WMPPs is much higher than any other porous metals or metallic foams. Higher sintering temperatures led to coarser joints between wires and resulted in higher tensile strength. The sintering temperature decreased from 1330 °C to 1130 °C and the tensile strength decreased from 296 MPa to 164 MPa. Lower porosity means that there are more metallurgical joints and metallic frameworks resisting deformation per unit volume. Therefore, lower porosities exhibit higher tensile strength. An increase of porosity from 17.14% to 32.5% led to the decrease of the tensile strength by 90 MPa. The

  3. Processing, Structural Characterization and Comparative Studies on Uniaxial Tensile Properties of a New Type of Porous Twisted Wire Material

    Directory of Open Access Journals (Sweden)

    Fei Wu

    2015-08-01

    Full Text Available A self-developed rotary multi-cutter device cuts stainless steel wire ropes into segments to fabricate twisted wires. Stainless steel porous twisted wire materials (PTWMs with a spatial composite intertexture structure are produced by the compaction and subsequent vacuum solid-phase sintering of twisted wires. The stainless steel PTWMs show two types of typical uniaxial tensile failure modes, i.e., a 45° angle fracture mode and an auxetic failure mode (the PTWMs expand along the direction perpendicular to the tension. The effects of the sintering parameters, porosities, wire diameters, and sampling direction on the tensile properties of the PTWMs are carefully investigated. By increasing the sintering temperature from 1130 °C to 1330 °C, the tensile strength of the PTWMs with 70% target porosity increased from 7.7 MPa to 28.6 MPa and the total failure goes down to 50%. When increasing the sintering time from 90 min to 150 min, the tensile strength increases from 12.4 MPa to 19.1 MPa and the total failure elongation drops to 78.6%. The tensile strength of the PTWMs increases from 28.9 MPa to 112.7 MPa with decreasing porosity from 69.5% to 46.0%, and the total failure elongation also increases from 14.8% to 40.7%. The tensile strength and the failure strain of the PTWMs with fine wires are higher than those of the PTWMs with coarse wires under the same porosity. Sampling direction has a small influence on the tensile properties of the PTWMs.

  4. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  5. Hirarchical structures and strength in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Hansen, Niels; Godfrey, Andrew

    2014-01-01

    Deformation, as one of the major methods to improve the (specific) strength of metals, can be combined with phase transformation to improve the strength of nanometals to an ultrahigh level close to the theoretical strength in single crystals. This is demonstrated by the analysis of the microstruc......Deformation, as one of the major methods to improve the (specific) strength of metals, can be combined with phase transformation to improve the strength of nanometals to an ultrahigh level close to the theoretical strength in single crystals. This is demonstrated by the analysis...... of the microstructural evolution, strengthening mechanisms and strength–structure relationships in a cold-drawn pearlitic steel with a structural scale in the nanometer range and a flow stress up to about 3.5 GPa. Structural parameters including the interlamellar spacing, the dislocation density in the ferrite lamellae...... and the cementite decomposition, have been analyzed and quantified by scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy for wires cold drawn up to a strain of 3.68. Three strengthening mechanisms, boundary strengthening, dislocation strengthening and solid...

  6. Optically excited structural transition in atomic wires on surfaces at the quantum limit

    Science.gov (United States)

    Frigge, T.; Hafke, B.; Witte, T.; Krenzer, B.; Streubühr, C.; Samad Syed, A.; Mikšić Trontl, V.; Avigo, I.; Zhou, P.; Ligges, M.; von der Linde, D.; Bovensiepen, U.; Horn-von Hoegen, M.; Wippermann, S.; Lücke, A.; Sanna, S.; Gerstmann, U.; Schmidt, W. G.

    2017-03-01

    Transient control over the atomic potential-energy landscapes of solids could lead to new states of matter and to quantum control of nuclear motion on the timescale of lattice vibrations. Recently developed ultrafast time-resolved diffraction techniques combine ultrafast temporal manipulation with atomic-scale spatial resolution and femtosecond temporal resolution. These advances have enabled investigations of photo-induced structural changes in bulk solids that often occur on timescales as short as a few hundred femtoseconds. In contrast, experiments at surfaces and on single atomic layers such as graphene report timescales of structural changes that are orders of magnitude longer. This raises the question of whether the structural response of low-dimensional materials to femtosecond laser excitation is, in general, limited. Here we show that a photo-induced transition from the low- to high-symmetry state of a charge density wave in atomic indium (In) wires supported by a silicon (Si) surface takes place within 350 femtoseconds. The optical excitation breaks and creates In-In bonds, leading to the non-thermal excitation of soft phonon modes, and drives the structural transition in the limit of critically damped nuclear motion through coupling of these soft phonon modes to a manifold of surface and interface phonons that arise from the symmetry breaking at the silicon surface. This finding demonstrates that carefully tuned electronic excitations can create non-equilibrium potential energy surfaces that drive structural dynamics at interfaces in the quantum limit (that is, in a regime in which the nuclear motion is directed and deterministic). This technique could potentially be used to tune the dynamic response of a solid to optical excitation, and has widespread potential application, for example in ultrafast detectors.

  7. Fano Factor Reduction on the 0.7 Conductance Structure of a Ballistic One-Dimensional Wire

    Science.gov (United States)

    Roche, P.; Ségala, J.; Glattli, D. C.; Nicholls, J. T.; Pepper, M.; Graham, A. C.; Thomas, K. J.; Simmons, M. Y.; Ritchie, D. A.

    2004-09-01

    We have measured the nonequilibrium current noise in a ballistic one-dimensional wire which exhibits an additional conductance plateau at 0.7×2e2/h. The Fano factor shows a clear reduction on the 0.7 structure, and eventually vanishes upon applying a strong parallel magnetic field. These results provide experimental evidence that the 0.7 structure is associated with two conduction channels that have different transmission probabilities.

  8. Dendritic Branch Intersections Are Structurally Regulated Targets for Efficient Axonal Wiring and Synaptic Clustering

    Science.gov (United States)

    Pinchas, Monika; Baranes, Danny

    2013-01-01

    Synaptic clustering on dendritic branches enhances plasticity, input integration and neuronal firing. However, the mechanisms guiding axons to cluster synapses at appropriate sites along dendritic branches are poorly understood. We searched for such a mechanism by investigating the structural overlap between dendritic branches and axons in a simplified model of neuronal networks - the hippocampal cell culture. Using newly developed software, we converted images of meshes of overlapping axonal and dendrites into topological maps of intersections, enabling quantitative study of overlapping neuritic geometry at the resolution of single dendritic branch-to-branch and axon-to-branch crossings. Among dendro-dendritic crossing configurations, it was revealed that the orientations through which dendritic branches cross is a regulated attribute. While crossing angle distribution among branches thinner than 1 µm appeared to be random, dendritic branches 1 µm or wider showed a preference for crossing each other at angle ranges of either 50°–70° or 80°–90°. It was then found that the dendro-dendritic crossings themselves, as well as their selective angles, both affected the path of axonal growth. Axons displayed 4 fold stronger tendency to traverse within 2 µm of dendro-dendritic intersections than at farther distances, probably to minimize wiring length. Moreover, almost 70% of the 50°–70° dendro-denritic crossings were traversed by axons from the obtuse angle’s zone, whereas only 15% traversed through the acute angle’s zone. By contrast, axons showed no orientation restriction when traversing 80°–90° crossings. When such traverse behavior was repeated by many axons, they converged in the vicinity of dendro-dendritic intersections, thereby clustering their synaptic connections. Thus, the vicinity of dendritic branch-to-branch crossings appears to be a regulated structure used by axons as a target for efficient wiring and as a preferred site for synaptic

  9. Basic Wiring.

    Science.gov (United States)

    Kaltwasser, Stan; And Others

    This module is the first in a series of three wiring publications; it serves as the foundation for students enrolled in a wiring program. It is a prerequisite to either "Residential Wiring" or "Commercial and Industrial Wiring." The module contains 16 instructional units that cover the following topics: occupational…

  10. Fabrication and superconducting properties of a simple-structured jelly-roll Nb{sub 3}Al wire with low-temperature heat-treatment

    Energy Technology Data Exchange (ETDEWEB)

    Cui, L.J. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Yan, G., E-mail: gyan@c-wst.com [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Pan, X.F. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Zhang, P.X. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Northwest Institute for Nonferrous Metal Research (NIN), Xi’an 710016 (China); Qi, M. [Northwest Institute for Nonferrous Metal Research (NIN), Xi’an 710016 (China); Liu, X.H.; Feng, Y. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Chen, Y.L.; Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Superconductivity and New Energy R& D Center, Southwest Jiaotong University (SWJTU), Chengdu 610031 (China)

    2015-06-15

    Highlights: • Nb{sub 3}Al superconducting wires with Cu-matrix and different filament numbers were prepared by the jelly-roll method. • The length of 18-cores Nb{sub 3}Al superconducting wire reaches 100 m without any breakage and intermediate anneal. • This wire has the uniform filament-shapes and fine long-wire homogeneity. • This Nb{sub 3}Al long wire has the T{sub c} of 13.4 K and J{sub c} of 4.7 × 10{sup 4} A/cm{sup 2} at 4.2 K and 12 T. - Abstract: With extremely high critical current density (J{sub c}) and excellent strain tolerance, Nb{sub 3}Al superconductor is considered as an alternative to Nb{sub 3}Sn for application of high-field magnets. However, owing to their complex structure, Nb{sub 3}Al superconducting wires can hardly meet the requirement of engineering application at present. In this work, a novel simple-structured Nb{sub 3}Al superconducting wires with Cu-matrix and different filament numbers were prepared by the conventional jelly-roll method, as well as a heat-treatment of 800–850 °C for 20–50 h. The results show that a 18-filament superconducting wire with length longer than 100 m can be successfully prepared by this method, and also this Nb{sub 3}Al long wire has the T{sub c} of 13.4 K and J{sub c} of 4.7 × 10{sup 4} A/cm{sup 2} at 4.2 K and 12 T. These suggest that with further optimization, the simple-structured Nb{sub 3}Al superconducting wires are very promising to fabricate the km-grade long wires to meet the requirement of engineering application.

  11. Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sales, D L; Molina, S I [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Campus Rio San Pedro, E-11510 Puerto Real, Cadiz (Spain); Varela, M; Pennycook, S J [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Campus Rio San Pedro, E-11510 Puerto Real, Cadiz (Spain); Gonzalez, L; Gonzalez, Y [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Fuster, D, E-mail: david.sales@uca.es [UMDO - Unidad Asociada al CSIC-IMM, Instituto de Ciencia de Materiales, Universidad de Valencia, PO Box 22085, 4607 Valencia (Spain)

    2010-08-13

    Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski-Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of {l_brace}114{r_brace} or {l_brace}118{r_brace}, ending with the formation of mature quantum wires with {l_brace}114{r_brace} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calculation of the strain energy during the quantum wire formation process. The observed morphological evolution is explained in terms of the calculated elastic energy changes at the growth front. Regions of the wetting layer close to the nanostructure perimeters have higher strain energy, causing migration of As atoms towards the quantum wire terraces, where the structure is partially relaxed; the thickness of the wetting layer is reduced in these zones and the island height increases until the (001) facet is removed.

  12. MODERN TECHNOLOGICAL APPROACHES TO DIRECTIONAL FORMATION OF STRUCTURE AND CHARACTERISTICS IN HIGH-CARBON ROD-WIRE

    Directory of Open Access Journals (Sweden)

    V. A. Lutsenko

    2009-01-01

    Full Text Available Influencing of the combined termomechanical treatment and alloying of high-carbon steel is studied by a chrome with the lowered maintenance of manganese on structure education and properties of wire rod. Kinetics of disintegration of austenita of alloy high-carbon steel at the continuous cooling. For the steel 80 regressive dependence of influencing of tensile strength on maintenance of chrome and manganese is built.

  13. Women Fellows of INAE | Women in Science | Initiatives | Indian ...

    Indian Academy of Sciences (India)

    Women Fellows of INAE. INAE - Indian National Academy of Engineering. Ms. Alpa Sheth Civil Engineering. Prof. Bharathi Bhat Electronics & Communication Engineering. Prof. Dipanwita Roy Chowdhury Computer Engineering and Information Technology. Prof. Kamala Krithivasan Computer Engineering and Information ...

  14. A proton wire and water channel revealed in the crystal structure of isatin hydrolase

    DEFF Research Database (Denmark)

    Bjerregaard-Andersen, Kaare; Sommer, Theis; Jensen, Jan Kristian

    2014-01-01

    to a novel family of metalloenzymes that include the bacterial kynurenine formamidase. The product state, mimicked by bound thioisatinate, reveals a water molecule that bridges the thioisatinate to a proton wire in an adjacent water channel and thus allows the proton released by the reaction to escape only...... when the product is formed. The functional proton wire present in IH-b represents a unique catalytic feature common to all hydrolases is here trapped and visualized for the first time. The local molecular environment required to coordinate thioisatinate allows stronger and more confident identification...

  15. Effect of Ag in structural, electrical and magnetic properties of Ag-sheated Bi-2223 wires

    Directory of Open Access Journals (Sweden)

    D Sohrabi

    2009-08-01

    Full Text Available  In this study, the superconducting properties of Bi-2223/Ag wires, made by the PIT method have been studied. Powder samples were prepared using conventional solid state reaction method. After calcination, samples with different Ag percent (0, 5, 10, 15, 20, and 25 prepared and sintered at 830 °C. It was shown that Ag addition has not only affected the formation of the desired Bi-2223 phase and the microstructure of these wires, but also influenced on the critical current density (JC and critical temperature.

  16. Defect structures in MgB2 wires introduced by hot isostatic pressing

    International Nuclear Information System (INIS)

    Liao, X Z; Serquis, A; Zhu, Y T; Civale, L; Hammon, D L; Peterson, D E; Mueller, F M; Nesterenko, V F; Gu, Y

    2003-01-01

    The microstructures of MgB 2 wires prepared by the powder-in-tube technique and subsequent hot isostatic pressing were investigated using transmission electron microscopy. A large amount of crystalline defects including small-angle twisting, tilting and bending boundaries, in which high densities of dislocations reside, was found forming sub-grains within MgB 2 grains. It is believed that these defects resulted from particle deformation during the hot isostatic pressing process and are effective flux pinning centres that contribute to the high critical current densities of the wires at high temperatures and at high fields

  17. Influence of ITO-Silver Wire Electrode Structure on the Performance of Single-Crystal Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Wern-Dare Jheng

    2012-01-01

    Full Text Available This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO and the high conductivity of the silver wire that were coated on the single crystal silicon solar cells increased photoelectron export, thus increasing the efficiency of the solar cell. The experiment utilized a sol-gel solution containing phosphorus that was spin coated on single-crystal silicon wafers; this phosphorus also served as a phosphorus diffusion source. A p-n junction was formed after annealing at high temperature, and the substrate was coated with silver wires and ITO films of various structures to produce the electrodes. This study proposed that applying a heat treatment to the aluminum of back electrodes would result in a higher efficiency for single-crystal silicon solar cells, whereas single-crystal silicon solar cells containing front electrodes with ITO film coated with silver wires would result in efficiencies that are higher than those achieved using pure ITO thin-film electrodes.

  18. Electronic and optical properties of graphene-like InAs: An ab initio study

    Science.gov (United States)

    Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

    2018-03-01

    The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

  19. Wire Chamber

    CERN Multimedia

    Magnetoscriptive readout wire chamber. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  20. Wire chamber

    CERN Multimedia

    1967-01-01

    Magnetoscriptive readout wire chamber.Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  1. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  2. Simple intrinsic defects in InAs :

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  3. wire chamber

    CERN Multimedia

    Proportional multi-wire chamber. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle. Proportional wire chambers allow a much quicker reading than the optical or magnetoscriptive readout wire chambers.

  4. Growth of Hierarchically Structured High-Surface Area Alumina on FeCrAl Alloy Wires

    Directory of Open Access Journals (Sweden)

    Chandni Rallan

    2013-01-01

    Full Text Available The formation of metastable alumina phases due to the oxidation of commercial FeCrAl alloy wires (0.5 mm thickness at various temperatures and time periods has been examined. Samples were isothermally oxidised in air using a thermogravimetric analyzer (TGA. The morphology of the oxidised samples was analyzed using an Electronic Scanning Electron Microscope (ESEM and X-ray on the surface analysis was done using an Energy Dispersive X-Ray (EDX analyzer. The technique of X-Ray Diffraction (XRD was used to characterize the phase of the oxide growth. The entire study showed that it was possible to grow high-surface area gamma alumina on the FeCrAl alloy wire surfaces when isothermally oxidised above 800°C over several hours.

  5. Structures and magnetism of multinuclear vanadium-pentacene sandwich clusters and their 1D molecular wires.

    Science.gov (United States)

    Zhang, Tingting; Zhu, Liyan; Wu, Qisheng; Yang, Shuo-Wang; Wang, Jinlan

    2012-10-28

    Two types of multinuclear sandwich clusters, (V(3))(n)Pen(n+1), (V(4))(n)Pen(n+1) (Pen = Pentacene; n = 1, 2), and their corresponding infinite one-dimensional (1D) molecular wires ([V(3)Pen](∞), [V(4)Pen](∞)) are investigated theoretically, especially on their magnetic coupling mechanism. These sandwich clusters and molecular wires are found to be of high stability and exhibit intriguing magnetic properties. The intra-layered V atoms in (V(3))(n)Pen(n+1) clusters prefer antiferromagnetic (AFM) coupling, while they can be either ferromagnetic (FM) or AFM coupling in (V(4))(n)Pen(n+1) depending on the intra-layered V-V distances via direct exchange or superexchange mechanism. The inter-layered V atoms favor FM coupling in (V(3))(2)Pen(3), whereas they are AFM coupled in (V(4))(2)Pen(3). Such magnetic behaviors are the consequence of the competition between direct exchange and superexchange interactions among inter-layered V atoms. In contrast, the 1D molecular wires, [V(3)Pen](∞) and [V(4)Pen](∞), appear to be FM metallic with ultra high magnetic moments of 6.8 and 4.0 μ(B) per unit cell respectively, suggesting that they can be served as good candidates for molecular magnets.

  6. Towards quantitative three-dimensional characterisation of InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Kuznetsova, Nadezda

    2011-01-01

    InAs quantum dots (QDs) grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such QDs are highly dependent on their three-dimensional structural and chemical profiles...

  7. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

    DEFF Research Database (Denmark)

    Krizek, Filip; Kanne, Thomas; Razmadze, Davydas

    2017-01-01

    Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanis...

  8. Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

    National Research Council Canada - National Science Library

    Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

    2005-01-01

    .... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

  9. wire chamber

    CERN Multimedia

    Was used in ISR (Intersecting Storage Ring) split field magnet experiment. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  10. Wire chamber

    CERN Multimedia

    Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  11. wire chamber

    CERN Multimedia

    Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  12. wire chamber

    CERN Multimedia

    1985-01-01

    Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  13. The Assessment Of The Structure And Properties Of High-Carbon Steel Wires After The Process Of Patenting With Induction Heating

    Directory of Open Access Journals (Sweden)

    Wiewiórowska S.

    2015-06-01

    Full Text Available One of the most important types of heat treatment that high-carbon steel wires are subjected to is the patenting treatment. This process is conducted with the aim of obtaining a fine-grained uniform pearlitic structure which will be susceptible to plastic deformation in drawing processes. Patenting involves two-stage heat treatment that includes heating the wire up to the temperature above Ac3 in a continuous heating furnace (in the temperature range of 850÷1050°C followed by a rapid cooling in a tank with a lead bath down to the temperature range of 450÷550°C. The patenting process is most significantly influenced by the chemistry of the steel being treated, as well as by the temperature and the rate of heating and cooling of the wire rod or wire being patented.

  14. Surface Preparation of InAs (110 Using Atomic Hydrogen

    Directory of Open Access Journals (Sweden)

    T.D. Veal

    2002-06-01

    Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

  15. Physical processes of current gain in InAs bipolar junction transistors

    Science.gov (United States)

    Wu, X.; Averett, K. L.; Maimon, S.; Koch, M. W.; Wicks, G. W.

    2004-01-01

    InAs bipolar junction transistors (BJTs), grown by molecular beam epitaxy, are reported with common emitter current gains ( β's) as large as 400. The factors affecting the common emitter current gain have been studied by estimating the magnitudes of the base transport factor ( αT) and emitter injection efficiency ( γ). This has been accomplished by studying a sequence of InAs BJTs with varying emitter doping densities, NE. Minority carrier diffusion length in the base ( LB), αT, and γ have been extracted from measured electrical characteristics. The results of the study of these InAs BJTs are as follows: L B≈0.4 μm, αT≈98% and γ ranges from 92% to nearly 100% depending on NE. This knowledge of the magnitudes of the injection efficiencies suggests when it would be useful to move from the simple BJT structure to the more advanced heterojunction bipolar transistor (HBT) structure. Lower γ BJTs would be improved, however high- γ BJTs would benefit little, by the use of the widegap emitters of HBTs. The method developed here to estimate γ, αT and LB is not specific to InAs BJTs, but should be useful for study of BJTs and HBTs in any material system.

  16. The effect of mechano-chemical treatment on structural properties of the drawn TiNi-based alloy wire

    Science.gov (United States)

    Anikeev, Sergey; Hodorenko, Valentina; Gunther, Victor; Chekalkin, Timofey; Kang, Ji-hoon; Kang, Seung-baik

    2018-01-01

    The rapid development of biomedical materials with the advanced functional characteristics is a challenging task because of the growing demands for better material properties in-clinically employed. Modern medical devices that can be implanted into humans have evolved steadily by replacing TiNi-based alloys for titanium and stainless steel. In this study, the effect of the mechano-chemical treatment on structural properties of the matrix and surface layer of the drawn TiNi-based alloy wire was assessed. A range of samples have been prepared using different drawing and etching procedures. It is clear from the results obtained that the fabricated samples show a composite structure comprising the complex matrix and textured oxycarbonitride spitted surface layer. The suggested method of surface treatment is a concept to increase the surface roughness for the enhanced bio-performance and better in vivo integration.

  17. Soft and smart modular structures actuated by shape memory alloy (SMA) wires as tentacles of soft robots

    Science.gov (United States)

    Jin, Hu; Dong, Erbao; Xu, Min; Liu, Chunshan; Alici, Gursel; Jie, Yang

    2016-08-01

    This paper introduces the design and fabrication of a multi-layered smart modular structure (SMS) that has been inspired by the muscular organs and modularity in soft animals. The SMS is capable of planar reciprocal motion of bending in heating process and recovering in cooling process when SMA wires carry out phase transformation. An adaptive regulation heating strategy is applied to avoid overheating and achieve bending range control of the SMS based on the resistance feedback of the SMA wires which as actuator of the SMS. The SMS can modular assemble soft robots with multiple morphologies such as lateral robots, bilateral robots and actinomorphic robots. A five-armed actinomorphic soft robot is conducted to crawling in terrestrial ground (max speed: 140 mm s-1, 0.7 body s-1), swimming in underwater environment (max speed: 67 mm s-1, 2.5 height s-1) and griping fragile objects (max object weight: 0.91 kg, 15 times the weight of itself). Those demonstrate that the performance of the SMS is good enough to be modular units to establish soft robots which possess a high speed of response, good adaptability and a safe interaction with their environments.

  18. Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution

    International Nuclear Information System (INIS)

    Fuster, David; Alen, Benito; Gonzalez, Luisa; Gonzalez, Yolanda; Martinez-Pastor, Juan; Gonzalez, Maria Ujue; GarcIa, Jorge M

    2007-01-01

    In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θ c , determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θ R c . At this θ R , the spontaneous formation of isolated quantum wires takes place. For θ>θ R this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ θ c . These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires

  19. Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution

    Energy Technology Data Exchange (ETDEWEB)

    Fuster, David [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Alen, Benito [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Gonzalez, Luisa [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Gonzalez, Yolanda [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Martinez-Pastor, Juan [Instituto de Ciencia de los Materiales, Universidad de Valencia, PO Box 2085, E-46071 Valencia (Spain); Gonzalez, Maria Ujue [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); GarcIa, Jorge M [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain)

    2007-01-24

    In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, {theta}{sub c}, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage {theta}{sub R}<{theta}{sub c}. At this {theta}{sub R}, the spontaneous formation of isolated quantum wires takes place. For {theta}>{theta}{sub R} this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for {theta} {theta}{sub c}. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires.

  20. The formation and evolution of the core-corona structure in the electrical explosion of aluminum wire in vacuum: experimental and numerical investigations

    Science.gov (United States)

    Wang, Kun; Shi, Zongqian; Shi, Yuanjie

    2017-08-01

    Experimental and numerical investigations on the formation and evolution of the core-corona structure in the electrical explosion of aluminum wire in vacuum are presented. In the experiments of aluminum wire explosion, shadowgraphy, interferometry and schlieren optical diagnostics are constructed with a laser probe to study the morphological evolution and distribution of the core and corona. A set of computational models with cold start conditions, consisting of a thermodynamic calculation and magnetohydrodynamic model combined with a semi-empirical equation of state and transport coefficients, are established to reproduce the behavior of the electrical explosion of aluminum wire. The radial profiles of the density, temperature, current density and magnetic field, addressing the physical scenario of the formation and evolution of the core-corona structure are analyzed. The numerical results are also compared with relevant experimental data.

  1. RETRACTED: Modeling and imprint fabrication of an infrared wire-grid polarizer with an antireflection grating structure

    Science.gov (United States)

    Yamada, Itsunari; Yamashita, Naoto; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

    2014-05-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor and the authors as they/the authors acknowledged extensive overlap between an earlier published article of Applied Physics Express1 and the current article. The authors would like to apologize to the Editors and readers for this situation. 1Itsunari Yamada, Naoto Yamashita, Kunihiko Tani, Toshihiko Einishi, Mitsunori Saito, Kouhei Fukumi and Junji Nishii, Infrared Wire-Grid Polarizer with Antireflection Structure by Imprinting on Both Sides. Appl. Phys. Express (2012). http://dx.doi.org/10.1143/APEX.5.082502

  2. Dislocation-based plasticity and strengthening mechanisms in sub-20 nm lamellar structures in pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Hansen, Niels; Godfrey, Andrew

    2016-01-01

    The tensile properties and the deformation microstructure of pearlitic steel (0.8 wt % C) have been quantified in wires drawn to strains in the range from 3.7 to 5.4, having a flow stress in the range from 3.5 to 4.5 GPa. With increasing strain the interlamellar spacing (ILS) decreases from about...... at a strain of 5.4; the dislocations are stored as threading dislocations, as dislocation tangles and as cell boundaries with low to medium misorientation angles. An analysis of the evolution of microstructure and strength with increasing strain suggests that dislocation-based plasticity is a dominating...... the calculated and the measured flow stress is observed over the strain range 0e5.4. However at large strains beyond 3.7 deviations are observed which are discussed in terms of the applied strength-structure relationships....

  3. Stationary transport in mesoscopic hybrid structures with contacts to superconducting and normal wires: A Green's function approach for multiterminal setups

    Science.gov (United States)

    Arrachea, Liliana

    2009-03-01

    We generalize the representation of the real-time Green’s functions introduced by Langreth and Nordlander [Phys. Rev. B 43, 2541 (1991)] and Meir and Wingreen [Phys. Rev. Lett. 68, 2512 (1992)] in stationary quantum transport in order to study problems with hybrid structures containing normal (N) and superconducting (S) pieces without introducing Nambu representation. We illustrate the treatment in a S-N junction under a stationary bias. We derive expressions for the normal and Andreev transmission functions, and we show the equivalence between these expressions and Blonder-Tinkham-Klapwijk formulation. Finally, we investigate in detail the behavior of the equilibrium currents in a normal ring threaded by a magnetic flux with attached superconducting wires at equilibrium. We analyze the flux sensitivity of the Andreev states, and we show that their response is equivalent to the one corresponding to the Cooper pairs with momentum q=0 in an isolated superconducting ring.

  4. Direct Observation of Acoustic Oscillations in InAs Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mariager, Simon O.; Khakhulin, Dmitry; Lemke, Henrik T.; Kjær, Kasper S.; Guerin, Laurent; Nuccio, Laura; Sørensen, Claus B.; Nielsen, Martin M.; Feidenhans’l, Robert (Copenhagen); (ESRF)

    2010-09-02

    Time-resolved X-ray diffraction and optical reflectivity are used to directly measure three different acoustic oscillations of InAs nanowires. The oscillations are excited by a femtosecond laser pulse and evolve at three different time scales. We measure the absolute scale of the initial radial expansion of the fundamental breathing eigenmode and determine the frequency by transient optical reflectivity. For the extensional eigenmode we measure the oscillations of the average radial and axial lattice constants and determine the amplitude of oscillations and the average extension. Finally we observe a bending motion of the nanowires. The frequencies of the eigenmodes are in good agreements with predictions made by continuum elasticity theory and we find no difference in the speed of sound between the wurtzite nanowires and cubic bulk crystals, but the measured strain is influenced by the interaction between different modes. The wurtzite crystal structure of the nanowires however has an anisotropic thermal expansion.

  5. Optoelectronic properties of individually positioned InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Overbeck, Jan; Brenneis, Andreas; Treu, Julian; Hertenberger, Simon; Abstreiter, Gerhard; Koblmueller, Gregor; Holleitner, Alexander [Walter Schottky Institut and Physik-Department, TU Muenchen, 85748 Garching (Germany)

    2013-07-01

    Small bandgap semiconducting nanowires offer a promising approach to fabricating nanoscale light-sensitive devices like broadband solar cells or mid-infrared photodetectors. We discuss the optoelectronic properties of individually positioned InAs nanowires on p-Si(111) substrates. The substrates exhibit a top layer of SiO{sub 2} which is structured via e-beam lithography creating holes in the oxide with a diameter of ∝80 nm. The nanowires are then grown vertically on the patterned substrates by solid-source molecular beam epitaxy. To fabricate optoelectronic devices, the nanowires are subsequently contacted via a thin, semitransparent metal film evaporated on top of an insulating layer (BCB). The p-Si substrate forms the second contact of the optoelectronic two-terminal devices. We discuss spatially resolved photocurrent measurements which give insights into the interplay of optoelectronic dynamics in single nanowires and in the Si-substrates.

  6. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    KAUST Repository

    Rota, Michele B.

    2017-07-12

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

  7. Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Egorov, A.Yu. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bedarev, D. [Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bernklau, D.; Riechert, H. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Dumitras, G. [Technical Univ. of Munich, Garching (Germany). Dept. of Physics E16

    2001-04-01

    Self-assembled InAs quantum dots (QDs) are fabricated in In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} and In{sub 0.06}Ga{sub 0.94}As{sub 0.98}N{sub 0.02} matrices on GaAs by solid source molecular beam epitaxy. The influence of InAs average layer thickness and matrix material on photoluminescence properties are studied. We observe a photoluminescence peak wavelength up to 1.49 {mu}m from structures with a nominal InAs thickness of four monolayers (ML). For QD structures emitting at 1.3 {mu}m, no saturation of ground state luminescence and no excited state photoluminescence are detected. This should lead to an improved performance of 1.3 {mu}m quantum dot lasers on GaAs. (orig.)

  8. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches...

  9. Put Your Cable Wiring to the Test.

    Science.gov (United States)

    Day, C. William

    2001-01-01

    Discusses why schools and universities should use testing procedures in any wire bid specification for cable wiring and also know how experienced the installers are in testing and installing structured cabling systems. Key cabling terms are included. (GR)

  10. APPLICATION OF THE X-RAY STRUCTURE ANALYSIS FOR IMPROVEMENT OF TECHNOLOGICAL PROCES- SES OF WIRE PRODUCTION AT BMZ

    Directory of Open Access Journals (Sweden)

    D. V. Kuznetsov

    2012-01-01

    Full Text Available The X-ray diffraction methods of qualitative and quantative analysis of phase composition of the brass coating, scale on the surface of brass wire, rod, patented wire, methods of determining the characteristics of the microstrains the lattice ferritic matrix pearlitic high-carbon steel, are explored.

  11. Electrical characterization of InAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Botha, L.; Shamba, P.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2008-07-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10{sup 18} cm{sup -3}) to strongly p-doped (p{proportional_to}10{sup 19} cm{sup -3}) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Electrical characterization of InAs thin films

    International Nuclear Information System (INIS)

    Botha, L.; Shamba, P.; Botha, J.R.

    2008-01-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10 18 cm -3 ) to strongly p-doped (p∝10 19 cm -3 ) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. A practical monitoring system for the structural safety of mega-trusses using wireless vibrating wire strain gauges.

    Science.gov (United States)

    Park, Hyo Seon; Lee, Hwan Young; Choi, Se Woon; Kim, Yousok

    2013-12-16

    Sensor technologies have been actively employed in structural health monitoring (SHM) to evaluate structural safety. To provide stable and real-time monitoring, a practical wireless sensor network system (WSNS) based on vibrating wire strain gauges (VWSGs) is proposed and applied to a building under construction. In this WSNS, the data measured from each VWSG are transmitted to the sensor node via a signal line and then transmitted to the master node through a short-range wireless communication module (operating on the Industrial, Scientific, and Medical (ISM) band). The master node also employs a long-range wireless communication module (Code Division Multiple Access-CDMA) to transmit the received data from the sensor node to a server located in a remote area, which enables a manager to examine the measured data in real time without any time or location restrictions. In this study, a total of 48 VWSGs, 14 sensor nodes, and seven master nodes were implemented to measure long-term strain variations of mega-trusses in an irregular large-scale building under construction. Based on strain data collected over a 16-month period, a quantitative evaluation of the construction process was performed to determine the aspects that exhibit the greatest influence on member behavior and to conduct a comparison with numerical simulation results. The effect of temperature stress on the structural elements was also analyzed. From these observations, the feasibility of a long-term WSNS based on VWSGs to evaluate the structural safety of an irregular building under construction was confirmed.

  14. A Practical Monitoring System for the Structural Safety of Mega-Trusses Using Wireless Vibrating Wire Strain Gauges

    Directory of Open Access Journals (Sweden)

    Hyo Seon Park

    2013-12-01

    Full Text Available Sensor technologies have been actively employed in structural health monitoring (SHM to evaluate structural safety. To provide stable and real-time monitoring, a practical wireless sensor network system (WSNS based on vibrating wire strain gauges (VWSGs is proposed and applied to a building under construction. In this WSNS, the data measured from each VWSG are transmitted to the sensor node via a signal line and then transmitted to the master node through a short-range wireless communication module (operating on the Industrial, Scientific, and Medical (ISM band. The master node also employs a long-range wireless communication module (Code Division Multiple Access—CDMA to transmit the received data from the sensor node to a server located in a remote area, which enables a manager to examine the measured data in real time without any time or location restrictions. In this study, a total of 48 VWSGs, 14 sensor nodes, and seven master nodes were implemented to measure long-term strain variations of mega-trusses in an irregular large-scale building under construction. Based on strain data collected over a 16-month period, a quantitative evaluation of the construction process was performed to determine the aspects that exhibit the greatest influence on member behavior and to conduct a comparison with numerical simulation results. The effect of temperature stress on the structural elements was also analyzed. From these observations, the feasibility of a long-term WSNS based on VWSGs to evaluate the structural safety of an irregular building under construction was confirmed.

  15. Structural homeostasis in the nervous system: A balancing act for wiring plasticity and stability

    Directory of Open Access Journals (Sweden)

    Jun eYin

    2015-01-01

    Full Text Available Experience-dependent modifications of neural circuits provide the cellular basis for functional adaptation and learning, while presenting significant challenges to the stability of neural networks. The nervous system copes with these perturbations through a variety of compensatory mechanisms with distinct spatial and temporal profiles. Mounting evidence suggests that structural plasticity, through modifications of the number and structure of synapses, or changes in local and long-range connectivity, might contribute to the stabilization of network activity and serve as an important component of the homeostatic regulation of the nervous system. Conceptually similar to the homeostatic regulation of synaptic strength and efficacy, homeostatic structural plasticity has a profound and lasting impact on the intrinsic excitability of the neuron and circuit properties, yet remains largely unexplored. In this review, we examine recent reports describing structural modifications associated with functional compensation in both developing and adult nervous systems, and discuss the potential role for structural homeostasis in maintaining network stability and its implications in physiological and pathological conditions of the nervous systems.

  16. Growth and electrical characterization of Zn-doped InAs and InAs1-xSbx

    International Nuclear Information System (INIS)

    Venter, A.; Shamba, P.; Botha, L.; Botha, J.R.

    2009-01-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs 1-x Sb x layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs 1-x Sb x epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  17. Home and School Technology: Wired versus Wireless.

    Science.gov (United States)

    Van Horn, Royal

    2001-01-01

    Presents results of informal research on smart homes and appliances, structured home wiring, whole-house audio/video distribution, hybrid cable, and wireless networks. Computer network wiring is tricky to install unless all-in-one jacketed cable is used. Wireless phones help installers avoid pre-wiring problems in homes and schools. (MLH)

  18. Electronic instabilities and structural fluctuations in self-assembled atom wires

    NARCIS (Netherlands)

    Snijders, P.C.

    2006-01-01

    One-dimensional (1D) solid state systems can behave drastically different from their higher dimensional counterparts. Increased interactions can produce electronic and/or structural instabilities. In this respect, the following fundamental questions are important for a proper understanding of the

  19. On the processing of InAs and InSb photodiode applications

    Energy Technology Data Exchange (ETDEWEB)

    Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

    2008-07-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. On the processing of InAs and InSb photodiode applications

    International Nuclear Information System (INIS)

    Odendaal, V.; Botha, J.R.; Auret, F.D.

    2008-01-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Studies on the controlled growth of InAs nanostructures on scission surfaces

    International Nuclear Information System (INIS)

    Bauer, J.

    2006-01-01

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {110}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {110}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  2. Band structure of a three-dimensional topological insulator quantum wire in the presence of a magnetic field.

    Science.gov (United States)

    Liu, Zhe; Jiang, Liwei; Zheng, Yisong

    2016-07-13

    By means of a numerical diagonalization approach, we calculate the electronic structure of a three-dimensional topological insulator (3DTI) quantum wire (QW) in the presence of a magnetic field. The QW can be viewed as a 3DTI film with lateral surfaces, when its rectangular cross section has a large aspect ratio. Our calculation indicates that nonchiral edge states emerge because of the confined states at the lateral surfaces. These states completely cover the valence band region among the Landau levels, which reasonably account for the absence of the [Formula: see text] quantum Hall effect in the relevant experimental works. In an ultrathin 3DTI film, inversion between the electron-type and hole-type bands occurs, which leads to the so-called pseudo-spin Hall effect. In a 3DTI QW with a square cross section, a tilting magnetic field can establish well-defined Landau levels in all four surfaces. In such a case, the quantum Hall edge states are localized at the square corners, characterized by the linearly crossing one-dimensional band profile. And they can be shifted between the adjacent corners by simply rotating the magnetic field.

  3. A novel horizontal to vertical spectral ratio approach in a wired structural health monitoring system

    OpenAIRE

    F. P. Pentaris

    2014-01-01

    This work studies the effect ambient seismic noise can have on building constructions, in comparison with the traditional study of strong seismic motion in buildings, for the purpose of structural health monitoring. Traditionally, engineers have observed the effect of earthquakes on buildings by usage of seismometers at various levels. A new approach is proposed in which acceleration recordings of ambient seismic noise are used and horizontal to vertical spectra ratio (HVSR)...

  4. Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi-junction solar cells

    Science.gov (United States)

    Cho, Hirofumi; Toprasertpong, Kasidit; Sodabanlu, Hassanet; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki

    2017-04-01

    Wire on Well (WoW) structure embedded in a matrix is naturally formed by growing InxGa1-xAs/GaAs1-yPy strained multiple quantum wells (MQW) on vicinal substrates and employing triethylgallium (TEGa) as a precursor in low-temperature MOVPE. The structure is useful for the subcell in current-matched mult-junction solar cells with lattice-matched materials because of its ability of band-gap tuning. In this research, high density and uniform In0.30Ga0.70As/GaAs0.6P0.4 WoW was obtained up to 200 stacks and its structure was analyzed by X-ray diffraction reciprocal space mapping, atomic force microscopy and scanning transmission electron microscopy. The structure of the wire can be controlled by changing the equivalent layer thicknesses of In0.30Ga0.70As and GaAs0.6P0.4. The photoluminescence peak from the WoW shifted according to the size of InGaAs wires and the intensity was dependent on the accumulation of lattice-mismatch stress.

  5. High extinction ratio and low transmission loss thin-film terahertz polarizer with a tunable bilayer metal wire-grid structure.

    Science.gov (United States)

    Huang, Zhe; Parrott, Edward P J; Park, Hongkyu; Chan, Hau Ping; Pickwell-MacPherson, Emma

    2014-02-15

    A thin-film terahertz polarizer is proposed and realized via a tunable bilayer metal wire-grid structure to achieve high extinction ratios and good transmission. The polarizer is fabricated on top of a thin silica layer by standard micro-fabrication techniques to eliminate the multireflection effects. The tunable alignment of the bilayer aluminum-wire grid structure enables tailoring of the extinction ratio and transmission characteristics. Using terahertz time-domain spectroscopy (THz-TDS), a fabricated polarizer is characterized, with extinction ratios greater than 50 dB and transmission losses below 1 dB reported in the 0.2-1.1 THz frequency range. These characteristics can be improved by further tuning the polarizer parameters such as the pitch, metal film thickness, and lateral displacement.

  6. Wire metamaterials: physics and applications.

    Science.gov (United States)

    Simovski, Constantin R; Belov, Pavel A; Atrashchenko, Alexander V; Kivshar, Yuri S

    2012-08-16

    The physics and applications of a broad class of artificial electromagnetic materials composed of lattices of aligned metal rods embedded in a dielectric matrix are reviewed. Such structures are here termed wire metamaterials. They appear in various settings and can operate from microwaves to THz and optical frequencies. An important group of these metamaterials is a wire medium possessing extreme optical anisotropy. The study of wire metamaterials has a long history, however, most of their important and useful properties have been revealed and understood only recently, especially in the THz and optical frequency ranges where the wire media correspond to the lattices of microwires and nanowires, respectively. Another group of wire metamaterials are arrays and lattices of nanorods of noble metals whose unusual properties are driven by plasmonic resonances. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Dionizio Moreira, M [Divisao de Metrologia de Materiais (DIMAT), INMETRO, CEP 25250-020, Xerem, Duque de Caxias, RJ (Brazil); Venezuela, P [Instituto de Fisica, Universidade Federal Fluminense, Campus da Praia Vermelha, CEP 24210-240, Niteroi, RJ (Brazil); Miwa, R H [Instituto de Fisica, Universidade Federal de Uberlandia, C.P. 593, CEP 38400-902, Uberlandia, MG (Brazil)

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As{r_reversible}P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  8. Wire Mesh Dampers for Semi-Floating Ring Bearings in Automotive Turbochargers: Measurements of Structural Stiffness and Damping Parameters

    Directory of Open Access Journals (Sweden)

    Keun Ryu

    2018-04-01

    Full Text Available The current work introduces a new semi-floating ring bearing (SFRB system developed for improving the rotordynamic and vibration performance of automotive turbochargers (TCs at extreme operation conditions, such as high temperature, severe external force excitation, and large rotor imbalance. The new bearing design replaces outer oil films, i.e., squeeze film dampers (SFDs, in TC SFRBs with wire mesh dampers (WMDs. This SFRB configuration integrating WMDs aims to implement reliable mechanical components, as an inexpensive and simple alternative to SFDs, with consistent and superior damping capability, as well as predictable forced performance. Since WMDs are in series with the inner oil films of SFRBs, experimentally determined force coefficients of WMDs are of great importance in the design process of TC rotor-bearing systems (RBSs. Presently, the measurements of applied static load and ensuing deflection determine the structural stiffnesses of the WMDs. The WMD damping parameters, including dissipated energy, loss factor, and dry friction coefficient, are estimated from the area of the distinctive local hysteresis loop of the load versus WMD displacement data recorded during consecutive loading-unloading cycles as a function of applied preload with a constant amplitude of motion. The changes in WMD loss factor and dry friction coefficient due to increases in preload are more significant for the WMDs with lower density. The present work shows, to date, the most comprehensive measurements of static load characteristics on the WMDs for application into small automotive TCs. More importantly, the extensive test measurements of WMD deflection versus increasing static loads will aid to anchor predictions of future computation model.

  9. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy

    Science.gov (United States)

    Averett, K. L.; Wu, X.; Koch, M. W.; Wicks, G. W.

    2003-04-01

    Two advances in InAs-based bipolar transistor technology are reported. Metamorphic InAs bipolar junction transistors (BJTs), grown on semi-insulating GaAs substrates, are reported for the first time, showing current gains comparable to similar structures grown homoepitaxially on InAs substrates. Measurements by atomic force microscopy report root-mean-square surface roughness as low as 0.661 nm, for a metamorphic BJT structure with a 5 μm thick InAs buffer. The quality of the epitaxial structure was investigated as a function of the buffer layer thickness, by measuring the reverse-leakage current density of metamorphic BJTs of 1, 2, and 5 μm InAs buffer layers, showing improved electrical characteristics with increasing buffer layer thickness. A second technological advance is also reported, concerning the development of a heterojunction bipolar transistor (HBT), with a strained, pseudomorphic InAs 1- yP y ternary for the wide-gap emitter. The common emitter current gain of a control BJT device was measured at β=110, and the HBT device, of identical doping structure achieved β=180.

  10. X-ray diffraction analysis of InAs nanowires

    International Nuclear Information System (INIS)

    Davydok, Anton

    2013-01-01

    Semiconductor nanowires have attracted great interest as building blocks for future electronic and optoelectronic devices. The variability of the growth process opens the opportunity to control and combine the various properties tailoring for specific application. It was shown that the electrical and optical characteristics of the nanowires are strongly connected with their structure. Despite intensive research in this field, the growth process is still not fully understood. In particular, extensive real structure investigations are required. Most of the reports dedicated on the structural researches are based on the results of scanning electron microscopy (SEM) or transmission electron microscopy (TEM). SEM provides an image of the surface with nanostructures and is mainly used to describe the morphology of the sample, but it does not bring information about the internal structure, phase composition and defect structure. At the same time, the internal structure can be examined by TEM down to atomic scale. TEM image of good quality are very expensive due to the efforts in sample preparation and in localisation of a single object. All these aspects make the statistical structural analysis difficult. In the present work, X-ray diffraction analysis has been applied for structural investigation of InAs nanowires grown by different techniques. Using various X-ray diffraction geometries, the nanowire systems were investigated in terms of the lattice parameters, phase composition, strains and displacement fields and stacking defects. In particular, realizing grazing incidence diffraction and controlling the penetration depth of X-ray beam, we characterized sample series grown by Au-assisted metal organic phase epitaxy on GaAs [111]B substrate with different growth time. According to the results of SEM and X-ray investigations, a model of the growth process has been proposed. A more detailed analysis was performed on InAs nanowires grown by molecular beam epitaxy (MBE) on

  11. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    International Nuclear Information System (INIS)

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  12. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  13. Synthesis of Nano scale Heterostructures Comprised of Metal Nano wires, Carbon Nano tubes, and Metal Nanoparticles: Investigation of Their Structure and Electrochemical Properties

    International Nuclear Information System (INIS)

    Chopra, N.; Wu, J.; Chopra, N.; Agrawal, P.

    2014-01-01

    One-dimensional nano scale heterostructures comprised of multi segment gold-nickel nano wires, carbon nano tube, and nickel nanoparticles were fabricated in a unique approach combining top-down and bottom-up assembly methods. Porous alumina template was utilized for sequential electrodeposition of gold and nickel nano wire segments. This was followed by chemical vapor deposition growth of carbon nano tubes on multi segment gold-nickel nano wires, where nickel segment also acted as a carbon nano tube growth catalyst. The aligned arrays of these gold-nickel-carbon nano tube heterostructures were released from porous alumina template and then subjected to wet-chemical process to be decorated with nickel/nickel oxide core/shell nanoparticles. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy were utilized for morphology, interface, defect, and structure characterization. The electrochemical performance of these heterostructures was studied using cyclic voltammetry method and the specific capacitance of various heterostructures was estimated and compared.

  14. Noncontextual Wirings

    Science.gov (United States)

    Amaral, Barbara; Cabello, Adán; Cunha, Marcelo Terra; Aolita, Leandro

    2018-03-01

    Contextuality is a fundamental feature of quantum theory necessary for certain models of quantum computation and communication. Serious steps have therefore been taken towards a formal framework for contextuality as an operational resource. However, the main ingredient of a resource theory—a concrete, explicit form of free operations of contextuality—was still missing. Here we provide such a component by introducing noncontextual wirings: a class of contextuality-free operations with a clear operational interpretation and a friendly parametrization. We characterize them completely for general black-box measurement devices with arbitrarily many inputs and outputs. As applications, we show that the relative entropy of contextuality is a contextuality monotone and that maximally contextual boxes that serve as contextuality bits exist for a broad class of scenarios. Our results complete a unified resource-theoretic framework for contextuality and Bell nonlocality.

  15. Hierarchical MoS2 tubular structures internally wired by carbon nanotubes as a highly stable anode material for lithium-ion batteries.

    Science.gov (United States)

    Chen, Yu Ming; Yu, Xin Yao; Li, Zhen; Paik, Ungyu; Lou, Xiong Wen David

    2016-07-01

    Molybdenum disulfide (MoS2), a typical two-dimensional material, is a promising anode material for lithium-ion batteries because it has three times the theoretical capacity of graphite. The main challenges associated with MoS2 anodes are the structural degradation and the low rate capability caused by the low intrinsic electric conductivity and large strain upon cycling. Here, we design hierarchical MoS2 tubular structures internally wired by carbon nanotubes (CNTs) to tackle these problems. These porous MoS2 tubular structures are constructed from building blocks of ultrathin nanosheets, which are believed to benefit the electrochemical reactions. Benefiting from the unique structural and compositional characteristics, these CNT-wired MoS2 tubular structures deliver a very high specific capacity of ~1320 mAh g(-1) at a current density of 0.1 A g(-1), exceptional rate capability, and an ultralong cycle life of up to 1000 cycles. This work may inspire new ideas for constructing high-performance electrodes for electrochemical energy storage.

  16. Concurrent growth of InSe wires and In2O3 tulip-like structures in the Au-catalytic vapour-liquid-solid process

    International Nuclear Information System (INIS)

    Taurino, A; Signore, M A

    2015-01-01

    In this work, the concurrent growth of InSe and In 2 O 3 nanostructures, obtained by thermal evaporation of InSe powders on Au-covered Si substrates, has been investigated by scanning and transmission electron microscopy techniques. The vapour-solid and Au catalytic vapour-liquid-solid growth mechanisms, responsible of the simultaneous development of the two different types of nanostructures, i.e. InSe wires and In 2 O 3 tulip-like structures respectively, are discussed in detail. The thermodynamic processes giving rise to the obtained morphologies and materials are explained. (paper)

  17. Concurrent growth of InSe wires and In2O3 tulip-like structures in the Au-catalytic vapour-liquid-solid process

    Science.gov (United States)

    Taurino, A.; Signore, M. A.

    2015-06-01

    In this work, the concurrent growth of InSe and In2O3 nanostructures, obtained by thermal evaporation of InSe powders on Au-covered Si substrates, has been investigated by scanning and transmission electron microscopy techniques. The vapour-solid and Au catalytic vapour-liquid-solid growth mechanisms, responsible of the simultaneous development of the two different types of nanostructures, i.e. InSe wires and In2O3 tulip-like structures respectively, are discussed in detail. The thermodynamic processes giving rise to the obtained morphologies and materials are explained.

  18. Wire communication engineering

    International Nuclear Information System (INIS)

    Son, Byeong Tae

    1997-02-01

    This book describes wire telecommunication engineering/ It is divided into eleven chapter, which deal with Introduction with development of telecommunication, voice and sound wave and communication network, Telegraphy with summary of telegraphy, code of telegraphy, communication speed, morse and telex, Telephone on structure, circuit and image telephone, Traffic on telecommunication traffic, transmission of line about theory, cable line and loaded cable, carrier communication with carrier telegraphy and carrier telephone, optical communication with types, structure, specialty, laser and equipment, DATA, Mobile telecommunication on summary, mobile telephone, radio paging and digital mobile telecommunication, ISDN with channel of ISDN, and service of ISDN, and design of telecommunication.

  19. Influence of nitrogen on the growth and the properties of InAs quantum dots

    International Nuclear Information System (INIS)

    Schumann, O.

    2004-01-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  20. Stretched Wire Mechanics

    Energy Technology Data Exchange (ETDEWEB)

    Bowden, Gordon; /SLAC

    2005-09-06

    Stretched wires are beginning to play an important role in the alignment of accelerators and synchrotron light sources. Stretched wires are proposed for the alignment of the 130 meter long LCLS undulator. Wire position technology has reached sub-micron resolution yet analyses of perturbations to wire straightness are hard to find. This paper considers possible deviations of stretched wire from the simple 2-dimensional catenary form.

  1. Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

    Science.gov (United States)

    Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

    2017-11-01

    Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

  2. Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

    Directory of Open Access Journals (Sweden)

    Maronchuk I. E.

    2008-12-01

    Full Text Available Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

  3. Epitaxial semiconductor quantum wires.

    Science.gov (United States)

    Wu, J; Chen, Y H; Wang, Z G

    2008-07-01

    The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

  4. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    Energy Technology Data Exchange (ETDEWEB)

    Shweky, Itzhak [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Aharoni, Assaf [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Mokari, Taleb [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Rothenberg, Eli [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Nadler, Moshe [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Popov, Inna [Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Banin, Uri [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel) and Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel)]. E-mail: banin@chem.ch.huji.ac.il

    2006-07-15

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence.

  5. Structural and optical properties of silicon thin-films deposited by hot-wire chemical vapor deposition: The effects of silane concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Panchal, A.K. [Electrical Engineering Department, S.V. National Institute of Technology, Ichchhanath, Surat 395007 (India); Beladiya, Vivek [Department of Applied Physics, S.V. National Institute of Technology, Ichchhanath, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Ichchhanath, Surat 395007 (India)

    2013-09-02

    In this paper, the structural and optical properties of a series of silicon (Si) thin-films deposited using hot-wire chemical vapor deposition with different silane concentrations (SCs) are presented. All the films are characterized by Raman spectroscopy, scanning electron microscopy (SEM) and photoluminescence (PL). In the Raman analysis, the first order and specifically the second order Raman spectra indicate increase in crystalline grain size as well as crystalline volume fraction in the films with a reduction in SC, which is also confirmed by the SEM analysis. At the higher SC, the Si microcrystalline grains get embedded in the nanocrystalline Si network. The Gaussian fitted peaks in the PL analysis reveal the emission due to either band to band tail-state transitions or tail-state to mid-gap defect-state transitions due to Si-dangling bonds present in the films. - Highlights: • Growth of silicon (Si) thin-films using Hot-Wire Chemical Vapor Deposition. • Scanning Electron Microscopy, Raman and Photoluminescence Spectropscopy characterization. • Increment in Si crystalline volume fraction with decrease in Silane concentration. • Microcrystalline Si grains embedded in nanocrystalline Si tissues.

  6. Wire bonding in microelectronics

    CERN Document Server

    Harman, George G

    2010-01-01

    Wire Bonding in Microelectronics, Third Edition, has been thoroughly revised to help you meet the challenges of today's small-scale and fine-pitch microelectronics. This authoritative guide covers every aspect of designing, manufacturing, and evaluating wire bonds engineered with cutting-edge techniques. In addition to gaining a full grasp of bonding technology, you'll learn how to create reliable bonds at exceedingly high yields, test wire bonds, solve common bonding problems, implement molecular cleaning methods, and much more. Coverage includes: Ultrasonic bonding systems and technologies, including high-frequency systems Bonding wire metallurgy and characteristics, including copper wire Wire bond testing Gold-aluminum intermetallic compounds and other interface reactions Gold and nickel-based bond pad plating materials and problems Cleaning to improve bondability and reliability Mechanical problems in wire bonding High-yield, fine-pitch, specialized-looping, soft-substrate, and extreme-temperature wire bo...

  7. Water Desalination with Wires

    NARCIS (Netherlands)

    Porada, S.; Sales, B.B.; Hamelers, H.V.M.; Biesheuvel, P.M.

    2012-01-01

    We show the significant potential of water desalination using a novel capacitive wire-based technology in which anode/cathode wire pairs are constructed from coating a thin porous carbon electrode layer on top of electrically conducting rods (or wires). By alternately dipping an array of electrode

  8. Past and Present Development of INA's Liberalisation and Privatisation

    International Nuclear Information System (INIS)

    Lesic, A.; Stimac, B.

    2001-01-01

    The paper deals with the historical development aspects of the Croatian oil and gas industry INA. It describes the period from the very start of oil and gas production to the data of establishment of the Croatian state and afterwards. Some important milestones and political and economic events that impacted the development of the Croatian oil industry are described and commented, including changes toward liberalisation and privatisation of the oil and gas sector. The paper emphasises the role of INA in the Croatian economy and proposes some solutions for the liberalisation process and privatisation of the company that could prevent undesirable effects of privatisation and protect the interests of Croatia in the energy sector which is one of the main sectors of economy having influence on other production and service sectors and their competitiveness.(author)

  9. INA's Preparations for Liberalised Energy Market and Privatisation

    International Nuclear Information System (INIS)

    Dragicevic, T.; Kolundzic, S.

    2001-01-01

    Before opening of the market, energy entities must carry out numerous preparations in order to be ready for challenges of a competitive environment. Some preparations refer to legal and organisational issues, but many of them encompass reengineering of business processes, cost reduction schemes and various improvement measures aimed at maintenance or acquisition of a competitive advantage. INA is actively pursuing some of the above measures, but now, by the end of 2001, we also have to deal with preparations for privatisation. These two processes have some important common elements, competitiveness being certainly one of them. INA must work toward improving its competitive strength in the gas sector, in refining, in marketing of oil products, but also in various supporting activities. However, there are constraints that we have to observe, mainly related to social issues.(author)

  10. Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.

    Science.gov (United States)

    Karg, S F; Troncale, V; Drechsler, U; Mensch, P; Das Kanungo, P; Schmid, H; Schmidt, V; Gignac, L; Riel, H; Gotsmann, B

    2014-08-01

    Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).

  11. 29 CFR 1926.404 - Wiring design and protection.

    Science.gov (United States)

    2010-07-01

    ... 29 Labor 8 2010-07-01 2010-07-01 false Wiring design and protection. 1926.404 Section 1926.404... Requirements § 1926.404 Wiring design and protection. (a) Use and identification of grounded and grounding... construction sites, which are not a part of the permanent wiring of the building or structure and which are in...

  12. PS wire chamber

    CERN Document Server

    1970-01-01

    A wire chamber used at CERN's Proton Synchrotron accelerator in the 1970s. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  13. 22 CFR 40.68 - Aliens subject to INA 222(g).

    Science.gov (United States)

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

  14. Komunikační mix Svatebního salonu INA

    OpenAIRE

    Rybníčková, Michala

    2015-01-01

    Rybníčková, M. Marketing mix for Wedding Boutique INA. Bachelor thesis, Brno: Mendel university in Brno, 2015 This Bechelor thesis focuses on the marketing mix for the company Wedding Boutique INA. Survey results are used to evaluate the effectiveness of marketing tools currently used by INA. Furthermore, the results are used to recommend improvements to the marketing mix. Thesis also includes calculation of costs and scheduling for the year 2015.

  15. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates

    Science.gov (United States)

    Aagesen, Martin; Johnson, Erik; Sørensen, Claus B.; Mariager, Simon O.; Feidenhans'l, Robert; Spiecker, Erdmann; Nygård, Jesper; Lindelof, Poul Erik

    2007-12-01

    Free-standing nanostructures such as suspended carbon nanotubes, graphene layers, III-V nanorod photonic crystals and three-dimensional structures have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics. Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements. The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications.

  16. The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination.

    Science.gov (United States)

    Ko, Kwang-Man; Seo, Jung-Han; Kim, Dong-Eun; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

    2009-06-03

    It is found that the surface migration and nucleation behaviors of InSb quantum dots on AlSb/Si substrates, formed by molecular beam epitaxy in Stranski-Krastanov (SK) growth mode, are dependent on the substrate temperature. At relatively high temperatures above 430 degrees C, quantum dots are migrated and preferentially assembled onto the surface steps of high defect AlSb layers grown on Si substrates, while they are uniformly distributed on the surface at lower temperatures below 400 degrees C. It is also found that quantum dots located on the defect sites lead to effective termination of the propagation of micro-twin-induced structural defects into overlying layers, resulting in the low defect material grown on a largely mismatched substrate. The resulting 1.0 microm thick Al(x)Ga(1-x)Sb (x = 0.8) layer grown on the silicon substrate shows atomically flat (0.2 nm AFM mean roughness) surface and high crystal quality, represented by a narrow full width at half-maximum of 300 arc s in the x-ray rocking curve. The room-temperature electron mobility of higher than 16 000 cm(2) V(-1) s(-1) in InAs/AlGaSb FETs on the Si substrate is obtained with a relatively thin buffer layer, when a low defect density ( approximately 10(6) cm(-2)) AlGaSb buffer layer is obtained by the proposed method.

  17. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

    Science.gov (United States)

    Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

    2016-12-01

    The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

  18. Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon

    CSIR Research Space (South Africa)

    Arendse, CJ

    2009-01-01

    Full Text Available and that the structural disorder increases upon annealing. The increase in the structural disorder results in a broadening of the valence and conduction band tails, thereby pinning the valence and conduction band edges closer together, resulting in a decrease...

  19. MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers: A review

    Science.gov (United States)

    Viswanath, A. Kasi; Hiruma, K.; Yazawa, M.; Ogawa, K.; Katsuyama, T.

    1994-02-01

    Nanometer-size quantum whiskers of InAs and GaAs were fabricated by low-pressure MOCVD. Time-integrated and time-resolved photoluminescence of GaAs wires of diameters 200, 100, 70, and 50 nm were studied. The temperature dependence of PL peak energy was found to follow the same variation as the bandgap of GaAs, and Varshni's theory was used to explain the temperature dependence. The main channel of radiative recombination was found to be due to free excitons. The nonuniformity in diameter and lattice phonon interactions were considered to understand the origin of the linewidth. From the time-resolved PL, the surface recombination lifetimes were measured directly. Surface recombination velocities were evaluated and were correlated to wire diameter. The quantum-size-dependent spatial part of the electronic wave function was thought to be responsible for the variation of surface recombination velocity with diameter. Surface treatment with sulphur reduced the surface depletion layer, as evidenced from the time-resolved and time-integrated spectra. The carrier lifetime was in picosecond time scales at 7 K and increased with temperature, thus confirming the quantum confinement effects. The polarization experiments revealed the one-dimensional nature of quantum whiskers.

  20. Towards plant wires

    OpenAIRE

    Adamatzky, Andrew

    2014-01-01

    In experimental laboratory studies we evaluate a possibility of making electrical wires from living plants. In scoping experiments we use lettuce seedlings as a prototype model of a plant wire. We approximate an electrical potential transfer function by applying direct current voltage to the lettuce seedlings and recording output voltage. We analyse oscillation frequencies of the output potential and assess noise immunity of the plant wires. Our findings will be used in future designs of self...

  1. Photovoltaic Wire, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project will investigate a new architecture for photovoltaic devices based on nanotechnology: photovoltaic wire. The...

  2. Photovoltaic Wire Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project will investigate a new architecture for photovoltaic devices based on nanotechnology: photovoltaic wire. The...

  3. Charpak hemispherical wire chamber

    CERN Document Server

    1970-01-01

    pieces. Mesures are of the largest one. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  4. 1998 wire development workshop proceedings

    International Nuclear Information System (INIS)

    1998-04-01

    This report consists of vugraphs of the presentations at the conference. The conference was divided into the following sessions: (1) First Generation Wire Development: Status and Issues; (2) First Generation Wire in Pre-Commercial Prototypes; (3) Second Generation Wire Development: Private Sector Progress and Issues; (4) Second Generation Wire Development: Federal Laboratories; and (5) Fundamental Research Issues for HTS Wire Development

  5. InAs Band-Edge Exciton Fine Structure

    Science.gov (United States)

    2015-07-29

    with a 100x near- infrared corrected long working distance objective (Mi- tutoyo, Plan Apo NIR), using a 640 nm pulsed diode laser for excitation...Fernée, M. J.; Louyer, Y.; Tamarat, P.; Lounis, B. Comment on “Spin-Flip Limited Exciton Dephasing in CdSe/ ZnS Colloidal Quantum Dots”. Phys. Rev. Lett... Spectroscopy of single nanocrystals. Chem. Soc. Rev. 2014, 43, 1311–1337. [10] Bruns, O. T.; Bischof, T. S.; Harris, D. K.; Shi, Y.; Riedemann, L.; Reiberger

  6. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

    Science.gov (United States)

    Vigneau, Florian; Zeng, Zaiping; Escoffier, Walter; Caroff, Philippe; Leturcq, Renaud; Niquet, Yann-Michel; Raquet, Bertrand; Goiran, Michel

    2018-03-01

    The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

  7. 20 CFR 668.340 - What are INA grantee allowable activities?

    Science.gov (United States)

    2010-04-01

    ... Customers § 668.340 What are INA grantee allowable activities? (a) The INA grantee may provide any services...; (3) Orientation to services available; (4) Initial assessment of skill levels, aptitudes, abilities... and skill competencies; (2) Adult mentoring; (3) Training opportunities; (4) Supportive services, as...

  8. 20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

    Science.gov (United States)

    2010-04-01

    ... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

  9. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

    2016-01-01

    on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle...

  10. One-dimensional quantum confinement effect modulated thermoelectric properties in InAs nanowires.

    Science.gov (United States)

    Tian, Yuan; Sakr, Mohammed R; Kinder, Jesse M; Liang, Dong; Macdonald, Michael J; Qiu, Richard L J; Gao, Hong-Jun; Gao, Xuan P A

    2012-12-12

    We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with a diameter around 20 nm is obtained over T = 40-300 K. At low temperatures (T energy level broadening as the limiting factor in smearing out the 1D confinement enhanced thermoelectric power factor.

  11. Resonant tunneling of electrons in quantum wires

    International Nuclear Information System (INIS)

    Krive, I.V.; Shekhter, R.I.; Jonson, M.; Krive, I.V.

    2010-01-01

    We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron-electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.

  12. Wire Array Photovoltaics

    Science.gov (United States)

    Turner-Evans, Dan

    Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction

  13. Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 A/s

    Czech Academy of Sciences Publication Activity Database

    Mahan, A. H.; XU, Y.; Williamson, D. L.; Beyer, W.; Perkins, J. D.; Vaněček, Milan; Gedvilas, L. M.; Nelson, B. P.

    2001-01-01

    Roč. 90, č. 10 (2001), s. 5038-5047 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z1010914 Keywords : amorphous silicon structure * defect density * Staebler-Wronski effect * short and medium range order Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.128, year: 2001

  14. Thermally induced nano-structural and optical changes of nc-Si:H deposited by hot-wire CVD

    CSIR Research Space (South Africa)

    Arendse, CJ

    2009-04-01

    Full Text Available This paper reports on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200–700 °C. The as-deposited sample has a high crystalline volume fraction of 53...

  15. Automating wiring formboard design

    NARCIS (Netherlands)

    Van den Berg, T.

    2013-01-01

    Increase in aircraft wiring complexity call for manufacturing design improvements to reduce cost and lead-time. To achieve such improvements, a joint research project was performed by the Flight Performance and Propulsion (FPP) group and Fokker Elmo BV, the second largest aircraft wiring harness

  16. Stationary transport in mesoscopic hybrid structures with contacts to superconducting and normal wires. A Green's function approach for multiterminal setups

    OpenAIRE

    Arrachea, Liliana

    2008-01-01

    We generalize the representation of the real time Green's functions introduced by Langreth and Nordlander [Phys. Rev. B 43 2541 (1991)] and Meir and Wingreen [Phys. Rev. Lett. 68 2512 (1992)] in stationary quantum transport in order to study problems with hybrid structures containing normal (N) and superconducting (S) pieces. We illustrate the treatment in a S-N junction under a stationary bias and investigate in detail the behavior of the equilibrium currents in a normal ring threaded by a m...

  17. Structuring of Functional Spider Silk Wires, Coatings, and Sheets by Self-Assembly on Superhydrophobic Pillar Surfaces.

    Science.gov (United States)

    Gustafsson, Linnea; Jansson, Ronnie; Hedhammar, My; van der Wijngaart, Wouter

    2018-01-01

    Spider silk has recently become a material of high interest for a large number of biomedical applications. Previous work on structuring of silk has resulted in particles (0D), fibers (1D), films (2D), and foams, gels, capsules, or microspheres (3D). However, the manufacturing process of these structures is complex and involves posttreatment of chemicals unsuitable for biological applications. In this work, the self-assembly of recombinant spider silk on micropatterned superhydrophobic surfaces is studied. For the first time, structuring of recombinant spider silk is achieved using superhydrophobic surfaces under conditions that retain the bioactivity of the functionalized silk. By tuning the superhydrophobic surface geometry and the silk solution handling parameters, this approach allows controlled generation of silk coatings, nanowires, and sheets. The underlying mechanisms and governing parameters are discussed. It is believed that the results of this work pave the way for fabrication of silk formations for applications including vehicles for drug delivery, optical sensing, antimicrobial coatings, and cell culture scaffolds. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Modeling and simulation of the fluid flow in wire electrochemical machining with rotating tool (wire ECM)

    Science.gov (United States)

    Klocke, F.; Herrig, T.; Zeis, M.; Klink, A.

    2017-10-01

    Combining the working principle of electrochemical machining (ECM) with a universal rotating tool, like a wire, could manage lots of challenges of the classical ECM sinking process. Such a wire-ECM process could be able to machine flexible and efficient 2.5-dimensional geometries like fir tree slots in turbine discs. Nowadays, established manufacturing technologies for slotting turbine discs are broaching and wire electrical discharge machining (wire EDM). Nevertheless, high requirements on surface integrity of turbine parts need cost intensive process development and - in case of wire-EDM - trim cuts to reduce the heat affected rim zone. Due to the process specific advantages, ECM is an attractive alternative manufacturing technology and is getting more and more relevant for sinking applications within the last few years. But ECM is also opposed with high costs for process development and complex electrolyte flow devices. In the past, few studies dealt with the development of a wire ECM process to meet these challenges. However, previous concepts of wire ECM were only suitable for micro machining applications. Due to insufficient flushing concepts the application of the process for machining macro geometries failed. Therefore, this paper presents the modeling and simulation of a new flushing approach for process assessment. The suitability of a rotating structured wire electrode in combination with an axial flushing for electrodes with high aspect ratios is investigated and discussed.

  19. Thermosonic wire bonding of IC devices using palladium wire

    International Nuclear Information System (INIS)

    Shze, J.H.; Poh, M.T.; Tan, R.M.

    1996-01-01

    The feasibility of replacing gold wire by palladium wire in thermosonic wire bonding of CMOS and bipolar devices are studied in terms of the manufacturability, physical, electrical and assembly performance. The results that palladium wire is a viable option for bonding the bipolar devices but not the CMOS devices

  20. Towards plant wires.

    Science.gov (United States)

    Adamatzky, Andrew

    2014-08-01

    In experimental laboratory studies we evaluate a possibility of making electrical wires from living plants. In scoping experiments we use lettuce seedlings as a prototype model of a plant wire. We approximate an electrical potential transfer function by applying direct current voltage to the lettuce seedlings and recording output voltage. We analyse oscillation frequencies of the output potential and assess noise immunity of the plant wires. Our findings will be used in future designs of self-growing wetware circuits and devices, and integration of plant-based electronic components into future and emergent bio-hybrid systems. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  1. Fabrication of mesoscopic floating Si wires by introducing dislocations

    International Nuclear Information System (INIS)

    Motohashi, Mitsuya; Shimizu, Kazuya; Niwa, Masaaki; Suzuki, Toshiaki

    2014-01-01

    We fabricated a mesoscopic Si wire by introducing dislocations in a silicon wafer before HF anodization. The dislocations formed along the (111) crystal plane. The outline of the dislocation line was an inverted triangle. The resulting wire floated on a bridge girder and had a hybrid structure consisting of a porous layer and crystalline Si. The cross section of the wire had an inverted triangle shape. The wire formation mechanism is discussed in terms of carrier transport, crystal structure, and dislocation formation during anodization. (paper)

  2. Fabrication of mesoscopic floating Si wires by introducing dislocations

    Science.gov (United States)

    Motohashi, Mitsuya; Shimizu, Kazuya; Suzuki, Toshiaki; Niwa, Masaaki

    2014-12-01

    We fabricated a mesoscopic Si wire by introducing dislocations in a silicon wafer before HF anodization. The dislocations formed along the (111) crystal plane. The outline of the dislocation line was an inverted triangle. The resulting wire floated on a bridge girder and had a hybrid structure consisting of a porous layer and crystalline Si. The cross section of the wire had an inverted triangle shape. The wire formation mechanism is discussed in terms of carrier transport, crystal structure, and dislocation formation during anodization.

  3. Mere zaštite pri eksploataciji mašina i opreme za aplikaciju pesticida

    OpenAIRE

    Dimitrovski, Zoran; Kukutanov, Risto; Gligorevic, Kosta; Oljaca, Mico

    2016-01-01

    Direktiva 2009/128/EC Evropskog parlamenta određuje okvir za sprovođenje Nacionalnog akcionog plana u svakoj državi, koji se odnosi na održljivoj upotrebi pesticida. Jedan deo directive dierktno uređuje upotrebu mašina i opreme za aplikaciju pesticida kao i njihovo pravilno i bezbedno korištenje. Imajuči u vidu da u Republici Makedoniji inspekcija i obuka farmera za pravilno i bezbedno korištenje ovih mašina nisu obavezne, javljaju se problemi oko održavanja mašina i trovanj...

  4. InP based lasers and optical amplifiers with wire-/dot-like active regions

    International Nuclear Information System (INIS)

    Reithmaier, J P; Somers, A; Deubert, S; Schwertberger, R; Kaiser, W; Forchel, A; Calligaro, M; Resneau, P; Parillaud, O; Bansropun, S; Krakowski, M; Alizon, R; Hadass, D; Bilenca, A; Dery, H; Mikhelashvili, V; Eisenstein, G; Gioannini, M; Montrosset, I; Berg, T W; Poel, M van der; Moerk, J; Tromborg, B

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 μm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling

  5. Cryogenic Pressure Seal for Wires

    Science.gov (United States)

    Ciana, J. J.

    1984-01-01

    High-pressure-seal formed by forcing polyurethane into space surrounding wire or cable in special fitting. Wire or cable routed through fitting then through a tightly fitting cap. Wire insulation left intact. Cap filled with sealant and forced onto the fitting: this pushes sealant into fitting so it seals wire or cable in fitting as well as in cap.

  6. Self-Assembled InAs Nanowires as Optical Reflectors.

    Science.gov (United States)

    Floris, Francesco; Fornasari, Lucia; Marini, Andrea; Bellani, Vittorio; Banfi, Francesco; Roddaro, Stefano; Ercolani, Daniele; Rocci, Mirko; Beltram, Fabio; Cecchini, Marco; Sorba, Lucia; Rossella, Francesco

    2017-11-21

    Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

  7. Photoluminescence of chemically treated InAs (111)A

    Science.gov (United States)

    Eassa, N.; Coetsee, E.; Swart, H. C.; Venter, A.; Botha, J. R.

    2014-06-01

    Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/ (NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111). Band-to-band transitions have been observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and to sulphur (at 0.414 eV), have been detected after treatment.

  8. Copper wire bonding

    CERN Document Server

    Chauhan, Preeti S; Zhong, ZhaoWei; Pecht, Michael G

    2014-01-01

    This critical volume provides an in-depth presentation of copper wire bonding technologies, processes and equipment, along with the economic benefits and risks.  Due to the increasing cost of materials used to make electronic components, the electronics industry has been rapidly moving from high cost gold to significantly lower cost copper as a wire bonding material.  However, copper wire bonding has several process and reliability concerns due to its material properties.  Copper Wire Bonding book lays out the challenges involved in replacing gold with copper as a wire bond material, and includes the bonding process changes—bond force, electric flame off, current and ultrasonic energy optimization, and bonding tools and equipment changes for first and second bond formation.  In addition, the bond–pad metallurgies and the use of bare and palladium-coated copper wires on aluminum are presented, and gold, nickel and palladium surface finishes are discussed.  The book also discusses best practices and re...

  9. The sub-wavelength imaging performance of disordered wire media

    International Nuclear Information System (INIS)

    Powell, David A.

    2008-01-01

    An analysis of the sub-wavelength imaging performance of disordered thin wire media is undertaken, in order to understand how its performance may be affected by manufacturing errors. The structure is found to be extremely robust to disorder which keeps the wires parallel. Variation in the orientation of the wires and their longitudinal position causes more significant degradation in the image quality, which is quantified numerically

  10. The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

    Science.gov (United States)

    Ullah, A. R.; Joyce, H. J.; Tan, H. H.; Jagadish, C.; Micolich, A. P.

    2017-11-01

    We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

  11. Needleless electrospinning with twisted wire spinneret

    International Nuclear Information System (INIS)

    Holopainen, Jani; Penttinen, Toni; Santala, Eero; Ritala, Mikko

    2015-01-01

    A needleless electrospinning setup named ‘Needleless Twisted Wire Electrospinning’ was developed. The polymer solution is electrospun from the surface of a twisted wire set to a high voltage and collected on a cylindrical collector around the wire. Multiple Taylor cones are simultaneously self-formed on the downward flowing solution. The system is robust and simple with no moving parts aside from the syringe pump used to transport the solution to the top of the wire. The structure and process parameters of the setup and the results on the preparation of polyvinyl pyrrolidone (PVP), hydroxyapatite (HA) and bioglass fibers with the setup are presented. PVP fiber sheets with areas of 40 × 120 cm 2 and masses up to 1.15 g were prepared. High production rates of 5.23 g h −1 and 1.40 g h −1 were achieved for PVP and HA respectively. The major limiting factor of the setup is drying of the polymer solution on the wire during the electrospinning process which will eventually force to interrupt the process for cleaning of the wire. Possible solutions to this problem and other ways to develop the setup are discussed. The presented system provides a simple way to increase the production rate and area of fiber sheet as compared with the conventional needle electrospinning. (paper)

  12. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ju Young [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Laser-IT Research Center, Korea Photonics Technology Institute, GwangJu 500-779 (Korea, Republic of); Song, Jin Dong, E-mail: jdsong@kist.re.kr [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yang, Hae Suk, E-mail: hsyang@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2012-08-31

    In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of {approx} 0.5 {mu}m above which the structural and transport qualities of the film are considerably enhanced. The resultant 2.60-{mu}m-thick InSb layer, grown at the substrate temperature of 400 Degree-Sign C and under the Sb flux of 1.5 Multiplication-Sign 10{sup -6} Torr, shows the electron mobility as high as 67,890 cm{sup 2}/Vs. - Highlights: Black-Right-Pointing-Pointer InSb films are grown on GaAs substrate by molecular beam epitaxy. Black-Right-Pointing-Pointer Intermediate layer of InAs quantum dots is inserted at GaAs/InSb interface. Black-Right-Pointing-Pointer Structural and transport properties of InSb are enhanced with InAs quantum dots. Black-Right-Pointing-Pointer Electron mobility over 50,000 cm{sup 2}/Vs is achieved within 1-{mu}m thickness of InSb.

  13. Defect reaction network in Si-doped InAs. Numerical predictions.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-05-01

    This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

  14. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

    International Nuclear Information System (INIS)

    Usman, Muhammad; O’Reilly, Eoin P; Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana; Klimeck, Gerhard

    2012-01-01

    III–V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In–Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response. (paper)

  15. Body of Knowledge (BOK) for Copper Wire Bonds

    Science.gov (United States)

    Rutkowski, E.; Sampson, M. J.

    2015-01-01

    Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications

  16. Simple synthesis of ultra-high quality In2S3 thin films on InAs substrates

    Science.gov (United States)

    Sim, Yumin; Kim, Jinbae; Seong, Maeng-Je

    We report a simple and reliable technique to synthesize high-quality In2S3 films on device-ready substrate, such as InAs substrates for useful device applications, by using thermal sulfurization in a hot-wall tube furnace. The crystal structure and composition were studied by using X-ray diffraction and energy dispersive X-ray, and the results confirmed that the synthesized In2S3 films were cubic β-In2S or tetragonal β-In2S3, depending on growth conditions. Morphology, vibrational modes, and optical properties were investigated by using field emission scanning electron microscopy, Raman, and photoluminescence spectroscopy, and the results indicated that the In2S3 films are remarkable crystal quality with substantial efficiency in photoluminescence. Especially, by optimizing the growth conditions, we have grown an extremely high-quality tetragonal β-In2S3 thin film firmly remained on the InAs substrate, for the first time. National Research Foundation of Korea.

  17. Mid-Infrared Photoconductivity in Self-Assembled InAs Quantum Dots

    Science.gov (United States)

    Berryman, K. W.; Lyon, S. A.; Segev, Mordechai

    1997-03-01

    Observations of mid-infrared photoconductivity in self-assembled InAs quantum dots are observed. The dots, which self-assemble into squat pyramidal shapes approximately 10 nm on a side and 2-3 nm high, are grown using standard molecular beam epitaxy techniques and coherently strained in a matrix of Al_0.3Ga_0.7As which has been grown on a GaAs substrate. Using a variety of cladding structures and dots doped with electrons, normal incidence photoconductivity has been measured at a range of wavelengths in the mid-infrared. Observations at different sample temperatures and applied bias allows discrimination and explanation of different tranistion processes, including excitation of carriers from the ground state of the dots into both excited states and the continuum. Photoluminescence and electroluminescence experiments are in good agreement with the observed optical transitions. The large optical response of these quantum dot samples suggests possible future use as novel mid-infrared detectors. Infrared photoconductivity is investigated for several different dot structures, and the possibility of further optimization of self-assembled quantum dots for both mid-infrared detection and emission will be discussed.

  18. Wired to freedom

    DEFF Research Database (Denmark)

    Jepsen, Kim Sune Karrasch; Bertilsson, Margareta

    2017-01-01

    dimension of life science through a notion of public politics adopted from the political theory of John Dewey. We show how cochlear implantation engages different social imaginaries on the collective and individual levels and we suggest that users share an imaginary of being “wired to freedom” that involves...... new access to social life, continuous communicative challenges, common practices, and experiences. In looking at their lives as “wired to freedom,” we hope to promote a wider spectrum of civic participation in the benefit of future life science developments within and beyond the field of Cochlear...

  19. Wiring and lighting

    CERN Document Server

    Kitcher, Chris

    2013-01-01

    Wiring and Lighting provides a comprehensive guide to DIY wiring around the home. It sets out the regulations and legal requirements surrounding electrical installation work, giving clear guidelines that will enable the reader to understand what electrical work they are able to carry out, and what the testing and certification requirements are once the work is completed. Topics covered include: Different types of circuits; Types of cables and cable installation under floors and through joists; Isolating, earthing and bonding; Accessory boxes and fixings; Voltage bands; Detailed advice on safe

  20. Electric wiring domestic

    CERN Document Server

    Coker, A J

    1992-01-01

    Electric Wiring: Domestic, Tenth Edition, is a clear and reliable guide to the practical aspects of domestic electric wiring. Intended for electrical contractors, installation engineers, wiremen and students, its aim is to provide essential up to date information on modern methods and materials in a simple, clear, and concise manner. The main changes in this edition are those necessary to bring the work into line with the 16th Edition of the Regulations for Electrical Installations issued by the Institution of Electrical Engineers. The book begins by introducing the basic features of domestic

  1. Modern wiring practice

    CERN Document Server

    Steward, W E

    2012-01-01

    Continuously in print since 1952, Modern Wiring Practice has now been fully revised to provide an up-to-date source of reference to building services design and installation in the 21st century. This compact and practical guide addresses wiring systems design and electrical installation together in one volume, creating a comprehensive overview of the whole process for contractors and architects, as well as electricians and other installation engineers. Best practice is incorporated throughout, combining theory and practice with clear and accessible explanation, all

  2. Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

    Science.gov (United States)

    Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-04-01

    Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si-based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and etching behaviors of InAs (100) in various acidic and basic solutions, such as HF, HCl, H2SO4, NaOH, KOH, and NH4OH, were investigated. In addition, the effect of pH on the oxidation and etching reactions taking place on the InAs surface was studied using solutions with a pH ranging from 1 to 13. It was observed that the oxidation of the InAs surface was hindered in acidic solutions, which was attributed to the dissolution of the oxidized surface layer. In particular, the treatment of the InAs surface using a strongly acidic solution with a pH of less than 3 produced an oxide-free surface due to the predominant etching of the InAs surface. The addition of H2O2 to the acidic solutions greatly increased the etching rate of the InAs surface, which suggests that the oxidation process is the rate-limiting step in the sequence of reactions that occur during the etching of the InAs surface in acidic solutions. The etching of InAs was suppressed in neutral solutions, which resulted in the formation of a relatively thicker oxide layer on the surface, and mild etching of the InAs surface took place in basic solutions. However, in basic solutions, the addition of H2O2 did not significantly contribute to the increase of the oxidation state of the InAs surface; thus, its effect on the etching rate of InAs was smaller than in acidic solutions.

  3. Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

    DEFF Research Database (Denmark)

    Chen, Miaoxiang Max; Kobashi, Kazufumi

    2012-01-01

    Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist...... of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting...

  4. Structural Characterisation and Mechanical FE Analysis of Conventional and M-Wire Ni-Ti Alloys Used in Endodontic Rotary Instruments

    Directory of Open Access Journals (Sweden)

    Diogo Montalvão

    2014-01-01

    Full Text Available The purpose of this study is to understand how the M-Wire alloy conditions the mechanical flexibility of endodontic rotary files at body temperature.Two different rotary instruments, a Profile GT 20/.06 and a Profile GT Series X 20/.06, were selected due to their geometrical similarity and their different constituent alloy. GT series X files are made from M-Wire, a Ni-Ti alloy allegedly having higher flexibility at body temperature. Both files were analysed by X-Ray Diffraction and Differential Scanning Calorimetry to investigate phase transformations and the effects of working temperature on these different alloys. Mechanical behaviour was assessed by means of static bending and torsional Finite Element simulations, taking into account the nonlinear superelastic behaviour of Ni-Ti materials. It was found that GT files present austenitic phase at body temperature, whereas GT series X present R-phase at temperatures under 40°C with a potential for larger flexibility. For the same load conditions, simulations showed that the slight geometrical differences between the two files do not introduce great disagreement in the instruments’ mechanical response. It was confirmed that M-Wire increases the instrument’s flexibility, mainly due to the presence of R-phase at body temperature.

  5. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

    CSIR Research Space (South Africa)

    Baisitse, TR

    2006-07-01

    Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

  6. Practical wiring in SI units

    CERN Document Server

    Miller, Henry A

    2013-01-01

    Practical Wiring, Volume 1 is a 13-chapter book that first describes some of the common hand tools used in connection with sheathed wiring. Subsequent chapters discuss the safety in wiring, cables, conductor terminations, insulating sheathed wiring, conductor sizes, and consumer's control equipments. Other chapters center on socket outlets, plugs, lighting subcircuits, lighting accessories, bells, and primary and secondary cells. This book will be very valuable to students involved in this field of interest.

  7. Wire EDM for Refractory Materials

    Science.gov (United States)

    Zellars, G. R.; Harris, F. E.; Lowell, C. E.; Pollman, W. M.; Rys, V. J.; Wills, R. J.

    1982-01-01

    In an attempt to reduce fabrication time and costs, Wire Electrical Discharge Machine (Wire EDM) method was investigated as tool for fabricating matched blade roots and disk slots. Eight high-strength nickel-base superalloys were used. Computer-controlled Wire EDM technique provided high quality surfaces with excellent dimensional tolerances. Wire EDM method offers potential for substantial reductions in fabrication costs for "hard to machine" alloys and electrically conductive materials in specific high-precision applications.

  8. Wire chambers: Trends and alternatives

    International Nuclear Information System (INIS)

    Regler, Meinhard

    1992-01-01

    The subtitle of this year's Vienna Wire Chamber Conference - 'Recent Trends and Alternative Techniques' - signalled that it covered a wide range of science and technology. While an opening Vienna talk by wire chamber pioneer Georges Charpak many years ago began 'Les funerailles des chambres a fils (the burial of wire chambers)', the contrary feeling this year was that wire chambers are very much alive!

  9. Research on quantum efficiency of GaN wire photocathode

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Diao, Yu; Kong, Yike

    2017-02-01

    On the basis of three-dimensional continuity equation in semiconductors and finite difference method, the carrier concentration and the quantum efficiency of GaN wire photocathode as a function of incident photon energy are achieved. Results show that the quantum efficiency of the wire photocathode is largely enhanced compared with the conventional planar photocathode. The superiority of the wire photocathode is reflected in its structure with surrounding surfaces. The quantum efficiency of the wire photocathode largely depends on the wire width, surface reflectivity, surface escape probability and incident angle of light. The back interface recombination rate, however, has little influences on the quantum efficiency of the wire photocathode. The simulation results suggest that the optimal width for photoemission is 150-200 nm. Besides, the quantum efficiency increases and decreases linearly with increasing surface escape probability and surface reflectivity, respectively. With increasing ratio of wire spacing to wire height, the optimal incident angle of light is reduced. These simulations are expected to guide the preparation of a better performing GaN wire photocathode.

  10. Command Wire Sensor Measurements

    Science.gov (United States)

    2012-09-01

    CFAR Constant False Alarm Rate CWIE Command Wire-Improvised Explosive Device EMI Electromagnetic Induction GPR Ground Penetrating Radar...this, some type of constant false alarm rate ( CFAR ) receiver is required. CFAR automatically raises the threshold level to keep clutter echoes and

  11. Transport in quantum wires

    Indian Academy of Sciences (India)

    Transport in quantum wires. SIDDHARTHA LAL, SUMATHI RAO£ and DIPTIMAN SEN. Centre for Theoretical Studies, Indian Institute of Science, Bangalore 560 012, India. £ Harish-chandra Research Institute, Chhatnag Road, Jhusi, Allahabad 211 019, India. Abstract. With a brief introduction to one-dimensional channels ...

  12. Wire chamber conference

    International Nuclear Information System (INIS)

    Bartl, W.; Neuhofer, G.; Regler, M.

    1986-02-01

    This booklet contains program and the abstracts of the papers presented at the conference, most of them dealing with performance testing of various types of wire chambers. The publication of proceedings is planned as a special issue of 'Nuclear instruments and methods' later on. All abstracts are in English. An author index for the book of abstracts is given. (A.N.)

  13. Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

    Science.gov (United States)

    Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

    2008-07-01

    This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

  14. Extreme Harmonic Generation in an InAs Spin-Orbit Qubit

    Science.gov (United States)

    Stehlik, J.; Schroer, M. D.; Maialle, M. Z.; Degani, M. H.; Petta, J. R.

    2014-03-01

    Strong spin-orbit materials have shown great promise in the field of quantum computation. Unlike conventional semiconductor materials, fast all-electrical control is achieved through electric dipole spin resonance (EDSR). In this work we explore EDSR in an InAs nanowire spin-orbit qubit. We observe signs of harmonic generation where spin flips occur at the resonance condition nhf = gμB B , where f is the applied frequency, B is the magnetic field, g is the g-factor and n is an integer. Near the interdot charge transition we observe harmonics up to n = 8, indicating extreme harmonic generation. At far detuning we only observe the n = 1 resonance. Further, we find odd/even structure in the harmonic response: odd harmonics result in an increase in the leakage current while even harmonics result in its suppression. Finally we observe oscillations in the resonant current as a function of detuning. The striking detuning dependence suggests that the harmonics may be caused by Landau-Zener transitions occurring due to the anti-crossing between the differing charge states. Numerical simulations of the system are qualitatively consistent with this picture. Funded by the Sloan and Packard Foundations, the NSF, and the Army Research Office. M.Z.M. and M.H.D. were funded by Fundação de Amparo à Pesquisa de São Paulo (Fapesp) and INCT-DISSE/CNPq, Brazil.

  15. An Integrated Nonlinear Analysis library - (INA) for solar system plasma turbulence

    Science.gov (United States)

    Munteanu, Costel; Kovacs, Peter; Echim, Marius; Koppan, Andras

    2014-05-01

    We present an integrated software library dedicated to the analysis of time series recorded in space and adapted to investigate turbulence, intermittency and multifractals. The library is written in MATLAB and provides a graphical user interface (GUI) customized for the analysis of space physics data available online like: Coordinated Data Analysis Web (CDAWeb), Automated Multi Dataset Analysis system (AMDA), Planetary Science Archive (PSA), World Data Center Kyoto (WDC), Ulysses Final Archive (UFA) and Cluster Active Archive (CAA). Three main modules are already implemented in INA : the Power Spectral Density (PSD) Analysis, the Wavelet and Intemittency Analysis and the Probability Density Functions (PDF) analysis.The layered structure of the software allows the user to easily switch between different modules/methods while retaining the same time interval for the analysis. The wavelet analysis module includes algorithms to compute and analyse the PSD, the Scalogram, the Local Intermittency Measure (LIM) or the Flatness parameter. The PDF analysis module includes algorithms for computing the PDFs for a range of scales and parameters fully customizable by the user; it also computes the Flatness parameter and enables fast comparison with standard PDF profiles like, for instance, the Gaussian PDF. The library has been already tested on Cluster and Venus Express data and we will show relevant examples. Research supported by the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement no 313038/STORM, and a grant of the Romanian Ministry of National Education, CNCS UEFISCDI, project number PN-II-ID PCE-2012-4-0418.

  16. Interaction and Dephasing of Excitons in ZnSe Quantum Wires

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Langbein, Wolfgang; Hvam, Jørn Märcher

    1999-01-01

    We study the coherent formation of biexcitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm by transient degenerate four-wave mixing. We observe an increase of the biexciton binding energy with decreasing wire width reaching 30% energy enhancement in the smallest wire structure...

  17. Dental Arch Wire

    Science.gov (United States)

    1979-01-01

    Straightening teeth is an arduous process requiring months, often years, of applying corrective pressure by means of arch wires-better known as brace-which may have to be changed several times in the course of treatment. A new method has been developed by Dr. George Andreasen, orthodontist and dental scientist at the University of Iowa. The key is a new type of arch wire material, called Nitinol, with exceptional elasticity which helps reduce the required number of brace changes. An alloy of nickel and titanium, Nitinol was originally developed for aerospace applications by the Naval Ordnance Laboratory, now the Naval Surface Weapons Laboratory, White Oaks, Maryland. NASA subsequently conducted additional research on the properties of Nitinol and on procedures for processing the metal.

  18. Wire chamber gases

    International Nuclear Information System (INIS)

    Va'vra, J.

    1992-04-01

    In this paper, we describe new developments in gas mixtures which have occurred during the last 3--4 years. In particular, we discuss new results on the measurement and modeling of electron drift parameters, the modeling of drift chamber resolution, measurements of primary ionization and the choice of gas for applications such as tracking, single electron detection, X-ray detection and visual imaging. In addition, new results are presented on photon feedback, breakdown and wire aging

  19. Vienna Wire Chamber Conference

    International Nuclear Information System (INIS)

    Anon.

    1983-01-01

    After those of 1978 and 1980, a third Wire Chamber Conference was held from 15-18 February in the Technical University of Vienna. Eight invited speakers covered the field from sophisticated applications in biology and medicine, via software, to the state of the art of gaseous detectors. In some forty other talks the speakers tackled in more detail the topics of gaseous detectors, calorimetry and associated electronics and software

  20. Wire in the Cable-Driven System of Surgical Robot

    Science.gov (United States)

    Wang, X. F.; Lv, N.; Mu, H. Z.; Xue, L. J.

    2017-07-01

    During the evolution of the surgical robot, cable plays an important role. It translates motion and force precisely from surgeon’s hand to the tool’s tips. In the paper, the vertical wires, the composition of cable, are mathematically modeled from a geometric point of view. The cable structure and tension are analyzed according to the characteristics of wire screw twist. The structural equations of the wires in different positions are derived for both non-bent cable and bent cable, respectively. The bending moment formula of bent cable is also obtained. This will help researchers find suitable cable and design more matched pulley.

  1. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

    International Nuclear Information System (INIS)

    Skiba-Szymanska, Joanna; Ward, Martin B; Ellis, David J P; Shields, Andrew J; Jamil, Ayesha; Farrer, Ian; Nicoll, Christine A; Griffiths, Jonathan P; Anderson, David; Jones, Geb A C; Ritchie, David A

    2011-01-01

    We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 μeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.

  2. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

    International Nuclear Information System (INIS)

    Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

    2014-01-01

    Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

  3. The Congress and the INA Trials, 1945-50: a Contest over the Perception of ‘Nationalist’ Politics

    NARCIS (Netherlands)

    Alpes, M.J.

    2007-01-01

    Whilst during the war the Indian National Army (hereafter INA) could be charged with having been the ‘puppet army’ of a fascist regime, the INA was brought firmly into the realms of anti-colonial and nationalist discourse after the war. Despite its earlier very distanced position, the Congress chose

  4. Machine for winding under tension a prestressing wire

    International Nuclear Information System (INIS)

    Perez, M.A.; Thillet, Georges.

    1975-01-01

    This invention concerns a machine for winding under tension a prestressing wire or cable. It is used in the wrapping of cylindrical structures, particularly concrete vessels, for the purpose of achieving radial prestressing in them [fr

  5. Self-organization of mesoscopic silver wires by electrochemical deposition

    Directory of Open Access Journals (Sweden)

    Sheng Zhong

    2014-08-01

    Full Text Available Long, straight mesoscale silver wires have been fabricated from AgNO3 electrolyte via electrodeposition without the help of templates, additives, and surfactants. Although the wire growth speed is very fast due to growth under non-equilibrium conditions, the wire morphology is regular and uniform in diameter. Structural studies reveal that the wires are single-crystalline, with the [112] direction as the growth direction. A possible growth mechanism is suggested. Auger depth profile measurements show that the wires are stable against oxidation under ambient conditions. This unique system provides a convenient way for the study of self-organization in electrochemical environments as well as for the fabrication of highly-ordered, single-crystalline metal nanowires.

  6. Dual wire welding torch and method

    Science.gov (United States)

    Diez, Fernando Martinez; Stump, Kevin S.; Ludewig, Howard W.; Kilty, Alan L.; Robinson, Matthew M.; Egland, Keith M.

    2009-04-28

    A welding torch includes a nozzle with a first welding wire guide configured to orient a first welding wire in a first welding wire orientation, and a second welding wire guide configured to orient a second welding wire in a second welding wire orientation that is non-coplanar and divergent with respect to the first welding wire orientation. A method of welding includes moving a welding torch with respect to a workpiece joint to be welded. During moving the welding torch, a first welding wire is fed through a first welding wire guide defining a first welding wire orientation and a second welding wire is fed through a second welding wire guide defining a second welding wire orientation that is divergent and non-coplanar with respect to the first welding wire orientation.

  7. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  8. Recent development of drastically innovative BSCCO wire (DI-BISCCO)

    International Nuclear Information System (INIS)

    Kikuchi, M.; Kato, T.; Ohkura, K.; Ayai, N.; Fujikami, J.; Fujino, K.; Kobayashi, S.; Ueno, E.; Yamazaki, K.; Yamade, S.; Hayashi, K.; Sato, K.; Nagai, T.; Matsui, Y.

    2006-01-01

    Up to this day, Ag-sheathed Bi2223 superconducting wires have been widely investigated and the long wires about 1000 m have been produced by using powder-in-tube (PIT) method on a commercial basis in the various facilities or companies. Although the wires are used for some applications such as HTS cables, magnets, motor and so on, the Bi2223 wires not only require much more improvements of the superconducting properties such as critical current, mechanical properties, but also longer and more uniform wires. Recently, the performances of Bi2223 wires have been drastically improved by using Controlled Over Pressure (CT-OP) sintering process. CT-OP process increased critical current (I c ) by more than 60% at 77 K and self field and improved the mechanical strength by more than 70%. The maximum I c was increased up to 166 A. These drastic improvements were caused by the higher density of Bi2223 filament up to almost 100% and better connectivity of the Bi2223 grains. The dense structure of the Bi2223 filaments prevents the ballooning phenomenon which is caused by the gasification of the trapped liquid nitrogen during temperature rise. Additionally, higher uniformity and higher production yield of long length wire were also achieved by exterminating defects during sintering. These high performance levels in CT-OP wires have contributed commercial level applications. We call as Drastically Innovative BSCCO (DI-BSCCO)

  9. Spin effects in InAs self-assembled quantum dots

    Directory of Open Access Journals (Sweden)

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  10. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  11. Hall and thermoelectric evaluation of p-type InAs

    International Nuclear Information System (INIS)

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  12. Temperature dependent properties of InSb and InAs nanowire field-effect transistors

    Science.gov (United States)

    Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes; Lind, Erik; Karlström, Olov; Wernersson, Lars-Erik

    2010-04-01

    We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

  13. Reusable Hot-Wire Cable Cutter

    Science.gov (United States)

    Pauken, Michael T.; Steinkraus, Joel M.

    2010-01-01

    holds it in position. The leads of the nichrome wire are attached to screw terminals that connect them to power leads. A bayonet plug mounted at the bottom of the rectangular block connects the power leads to a relay circuit. A thin aluminum shell encloses the entire structure, leaving access points to attach to the bayonet plug and to feed a cable into the cylinder. The access holes for the deployment cable are a smaller diameter than the nichrome coil to prevent the cable from coming in direct contact with the nichrome when loaded. It uses the same general method of severing a cable with a heated wire as was used previously, but implements it in such a way that it is more reliable and less prone to failure. It creates a mechanism to create repeatability that was nonexistent in the previous method.

  14. The effect of clamping a tensioned wire: implications for the Ilizarov external fixation system.

    Science.gov (United States)

    Watson, M A; Mathias, K J; Maffulli, N; Hukins, D W L

    2003-01-01

    This study demonstrates that clamping a tensioned wire can cause a reduction in wire tension. Tension (about 1275 N) was applied to a wire that was subsequently clamped, using cannulated bolts, to the steel half-ring of an Ilizarov external fixator. The tension in the wire was monitored before, during and after clamping. The apparatus was disassembled and the deformations in the wire caused by the clamps were measured. This experiment was repeated 15 times. When the wire was clamped to the frame, the wire tension was reduced by 22 +/- 7 per cent (mean +/- standard deviation, SD). The drop in wire tension was linearly correlated (r = 0.96; p toothpaste from a tube) and so reduce its tension during fixator assembly. To assess the magnitude of this effect in the clinical situation, the FE model analysis was repeated to replicate clamping a 1.8-mm-diameter wire to a 180-mm-diameter steel Ilizarov ring component. The analysis showed that for these conditions the tension reduced by 8-29 per cent. The results of this study highlight a general engineering problem: how can a tensioned wire be secured to a structure without an appreciable loss of tension? If the performance of the structure depends on the wire tension, this performance will change when the wire is secured.

  15. Metering Wheel-Wire Track Wire Boom Deployment Mechanism

    Science.gov (United States)

    Granoff, Mark S.

    2014-01-01

    The NASA MMS Spin Plane Double Probe (SDP) Deployer utilizes a helical path, rotating Metering Wheel and a spring loaded Wire "Holding" Track to pay out a "fixed end" 57 meter x 1.5 mm diameter Wire Boom stored between concentric storage cylinders. Unlike rotating spool type storage devices, the storage cylinders remain stationary, and the boom wire is uncoiled along the length of the cylinder via the rotation of the Metering Wheel. This uncoiling action avoids the need for slip-ring contacts since the ends of the wire can remain stationary. Conventional fixed electrical connectors (Micro-D type) are used to terminate to operational electronics.

  16. Octave-spanning supercontinuum generation at telecommunications wavelengths in a precisely dispersion- and length-controlled silicon-wire waveguide with a double taper structure

    Science.gov (United States)

    Ishizawa, Atsushi; Goto, Takahiro; Kou, Rai; Tsuchizawa, Tai; Matsuda, Nobuyuki; Hitachi, Kenichi; Nishikawa, Tadashi; Yamada, Koji; Sogawa, Tetsuomi; Gotoh, Hideki

    2017-07-01

    We demonstrate on-chip octave-spanning supercontinuum (SC) generation with a Si-wire waveguide (SWG). We precisely controlled the SWG width so that the group velocity becomes flat over a wide wavelength range. By adjusting the SWG length, we could reduce the optical losses due to two-photon absorption and pulse propagation. In addition, for efficient coupling between the laser pulse and waveguide, we fabricated a two-step inverse taper at both ends of the SWG. Using a 600-nm-wide SWG, we were able to generate a broadband SC spectrum at wavelengths from 1060 to 2200 nm at a -40 dB level with only 50-pJ laser energy from an Er-doped fiber laser oscillator. We found that we can generate an on-chip broadband SC spectrum with an SWG with a length even as small as 1.7 mm.

  17. The hypothesis of formation of the structure of surfaced metal at the surfacing based on the application of the prognostic algorithm of control the electrode wire speed

    Directory of Open Access Journals (Sweden)

    Lebedev V. A.

    2017-12-01

    Full Text Available The growth of a drop in the process of surfacing by a consumable electrode is characterized by a linear dependence of the current change on time. A hypothesis has been put forward, according to which a reduction in the feed rate of the electrode wire to zero in this time interval will substantially reduce the spraying loss and improve the formation of the surfacing roller. For the implementation of which, the use of regulators with a typical law of regulation is proposed, but not according to the current value of the arc current, but according to the forecast. A key feature of these researches is a realization given surfacing process with the imposition of external mechanical oscillations with specified amplitude-frequency characteristics on the welding bath. Analytical calculation of the transfer function for the prognostic PID regulator with the simplest linear prediction taking into account the oscillation of the weld pool is given.

  18. Sociální služby a jejich dostupnost v Kraji Vysočina

    OpenAIRE

    Cihlářová, Petra

    2014-01-01

    The aim of this diploma thesis is the mapping and analyzing of the availability of social services in the Vysočina region. Closer attention is given to the district of Havlíčkův Brod focusing on the evaluation of the scope, structure and availability of social services in this region. First the thesis presents the theoretical bases of the social system, in particular the historical development of the welfare state and its typology. After that follows a research focused on the comparison of th...

  19. Vertical Hole Transport and Carrier Localization in InAs /InAs1 -xSbx Type-II Superlattice Heterojunction Bipolar Transistors

    Science.gov (United States)

    Olson, B. V.; Klem, J. F.; Kadlec, E. A.; Kim, J. K.; Goldflam, M. D.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.; Flatté, M. E.

    2017-02-01

    Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-band-gap InAs /InAs1 -xSbx type-II superlattices (T2SLs). Vertical hole mobilities (μh) are reported and found to decrease rapidly from 360 cm2/V s at 120 K to approximately 2 cm2/V s at 30 K, providing evidence that holes are confined to localized states near the T2SL valence-miniband edge at low temperatures. Four distinct transport regimes are identified: (1) pure miniband transport, (2) miniband transport degraded by temporary capture of holes in localized states, (3) hopping transport between localized states in a mobility edge, and (4) hopping transport through defect states near the T2SL valence-miniband edge. Region (2) is found to have a thermal activation energy of ɛ2=36 meV corresponding to the energy range of a mobility edge. Region (3) is found to have a thermal activation energy of ɛ3=16 meV corresponding to the hopping transport activation energy. This description of vertical hole transport is analogous to electronic transport observed in disordered amorphous semiconductors displaying Anderson localization. For the T2SL, we postulate that localized states are created by disorder in the group-V alloy of the InAs1 -xSbx hole well causing fluctuations in the T2SL valence-band energy.

  20. Wiring regulations in brief

    CERN Document Server

    Tricker, Ray

    2012-01-01

    Tired of trawling through the Wiring Regs?Perplexed by Part P?Confused by cables, conductors and circuits?Then look no further! This handy guide provides an on-the-job reference source for Electricians, Designers, Service Engineers, Inspectors, Builders, Students, DIY enthusiastsTopic-based chapters link areas of working practice - such as cables, installations, testing and inspection, special locations - with the specifics of the Regulations themselves. This allows quick and easy identification of the official requirements relating to the situati

  1. The Micro Wire Detector

    Energy Technology Data Exchange (ETDEWEB)

    Adeva, B.; Gomez, F.; Pazos, A.; Pfau, R.; Plo, M. E-mail: maximo.plo@cern.ch; Rodriguez, J.M.; Vazquez, P.; Labbe, J.C

    1999-10-11

    We present the performance of a new proportional gas detector. Its geometry consists of a cathode plane with 70x70 {mu}m{sup 2} apertures, crossed by 25 {mu}m anode strips to which it is attached by 50 {mu}m kapton spacers. In the region where the avalanche takes place, the anode strips are suspended in the gas mixture as in a standard wire chamber. This detector exhibits high rate capability and large gains, introducing very little material. (author)

  2. Beam Position and Phase Monitor - Wire Mapping System

    Energy Technology Data Exchange (ETDEWEB)

    Watkins, Heath A [Los Alamos National Laboratory; Shurter, Robert B. [Los Alamos National Laboratory; Gilpatrick, John D. [Los Alamos National Laboratory; Kutac, Vincent G. [Los Alamos National Laboratory; Martinez, Derwin [Los Alamos National Laboratory

    2012-04-10

    The Los Alamos Neutron Science Center (LANSCE) deploys many cylindrical beam position and phase monitors (BPPM) throughout the linac to measure the beam central position, phase and bunched-beam current. Each monitor is calibrated and qualified prior to installation to insure it meets LANSCE requirements. The BPPM wire mapping system is used to map the BPPM electrode offset, sensitivity and higher order coefficients. This system uses a three-axis motion table to position the wire antenna structure within the cavity, simulating the beam excitation of a BPPM at a fundamental frequency of 201.25 MHz. RF signal strength is measured and recorded for the four electrodes as the antenna position is updated. An effort is underway to extend the systems service to the LANSCE facility by replacing obsolete electronic hardware and taking advantage of software enhancements. This paper describes the upgraded wire positioning system's new hardware and software capabilities including its revised antenna structure, motion control interface, RF measurement equipment and Labview software upgrades. The main purpose of the wire mapping system at LANSCE is to characterize the amplitude response versus beam central position of BPPMs before they are installed in the beam line. The wire mapping system is able to simulate a beam using a thin wire and measure the signal response as the wire position is varied within the BPPM aperture.

  3. 46 CFR 111.60-11 - Wire.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Wire. 111.60-11 Section 111.60-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Wiring Materials and Methods § 111.60-11 Wire. (a) Wire must be in an enclosure. (b) Wire must be...

  4. Four-atom period in the conductance of monatomic al wires

    DEFF Research Database (Denmark)

    Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

    2003-01-01

    We present first-principles calculations based on density functional theory for the conductance of monatomic Al wires between Al(111) electrodes. In contrast to the even-odd oscillations observed in other metallic wires, the conductance of the Al wires is found to oscillate with a period of four ...... atoms as the length of the wire is varied. Although local charge neutrality can account for the observed period, it leads to an incorrect phase. We explain the conductance behavior using a resonant transport model based on the electronic structure of the infinite wire....

  5. Corrosion of Wires on Wooden Wire-Bound Packaging Crates

    Science.gov (United States)

    Samuel L. Zelinka; Stan Lebow

    2015-01-01

    Wire-bound packaging crates are used by the US Army to transport materials. Because these crates may be exposed to harsh environments, they are dip-treated with a wood preservative (biocide treatment). For many years, zinc-naphthenate was the most commonly used preservative for these packaging crates and few corrosion problems with the wires were observed. Recently,...

  6. Low radiation level detection with room temperature InAs detector

    Science.gov (United States)

    Makai, Janos P.; Makai, Tamas

    2014-08-01

    Recently, room temperature or near room temperature InAs detectors are widely used in laser warning receivers, process control monitors, temperature sensors, etc. requiring linear operation over many decades of the sensitivity range. The linearity of zero biased Si, InGaAs and Ge detectors is thoroughly discussed in the literature, contrary to InAs detectors. In an earlier work of the authors it has been demonstrated that applying a bootstrap circuit to a Ge detector - depending on the frequency of the operation - will virtually increase the shunt resistance of the detector by 3-6 decades compared to the detector alone. In the present work, a similar circuitry was applied to a room temperature InAs detector, the differences between the bootstrapped Ge and bootstrapped InAs detector are underlined. It is shown, how the bootstrap circuit channels the photogenerated current to the feedback impedance decreasing with many decades the detectable low level limit of the detector - I/V converter unit. The linearity improvement results are discussed as a function of the chopping frequency, calculated and measured values are compared, the noise sources are analyzed and noise measurement results are presented.

  7. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.

    Science.gov (United States)

    Tomioka, Katsuhiro; Izhizaka, Fumiya; Fukui, Takashi

    2015-11-11

    III-V compound semiconductor and Ge are promising channel materials for future low-power and high-performance integrated circuits. A heterogeneous integration of these materials on the same platform, however, raises serious problem owing to a huge mismatch of carrier mobility. We proposed direct integration of perfectly vertically aligned InAs nanowires on Ge as a method for new alternative integrated circuits and demonstrated a high-performance InAs nanowire-vertical surrounding-gate transistor. Virtually 100% yield of vertically aligned InAs nanowires was achieved by controlling the initial surface of Ge and high-quality InAs nanowires were obtained regardless of lattice mismatch (6.7%). The transistor performance showed significantly higher conductivity with good gate control compared to Si-based conventional field-effect transistors: the drain current was 0.65 mA/μm, and the transconductance was 2.2 mS/μm at drain-source voltage of 0.50 V. These demonstrations are a first step for building alternative integrated circuits using vertical III-V/multigate planar Ge FETs.

  8. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  9. Prediction of Disease Case Severity Level To Determine INA CBGs Rate

    Science.gov (United States)

    Puspitorini, Sukma; Kusumadewi, Sri; Rosita, Linda

    2017-03-01

    Indonesian Case-Based Groups (INA CBGs) is case-mix payment system using software grouper application. INA CBGs consisting of four digits code where the last digits indicating the severity level of disease cases. Severity level influence by secondary diagnosis (complications and co-morbidity) related to resource intensity level. It is medical resources used to treat a hospitalized patient. Objectives of this research is developing decision support system to predict severity level of disease cases and illustrate INA CBGs rate by using data mining decision tree classification model. Primary diagnosis (DU), first secondary diagnosis (DS 1), and second secondary diagnosis (DS 2) are attributes that used as input of severity level. The training process using C4.5 algorithm and the rules will represent in the IF-THEN form. Credibility of the system analyzed through testing process and confusion matrix present the results. Outcome of this research shows that first secondary diagnosis influence significant to form severity level predicting rules from new disease cases and INA CBGs rate illustration.

  10. Surface Reconstruction Phase Diagrams for InAs, AlSb, and GaSb

    National Research Council Canada - National Science Library

    Bracker, A. S; Yang, M. J; Bnnett, B. R; Culbertson, J. C; Moore, W. J

    2000-01-01

    ... for optimizing growth conditions. Phase boundaries for InAs (0 0 1) [(2*4)->(4*2)], AlSb (0 0 1) [c(4*4)->(1*3)], and GaSb (0 0 1) [(2*5)_>(1*3)] are presented as a function of substrate temperature and Group V-limited growth rate...

  11. Improved superconducting magnet wire

    Science.gov (United States)

    Schuller, I.K.; Ketterson, J.B.

    1983-08-16

    This invention is directed to a superconducting tape or wire composed of alternating layers of copper and a niobium-containing superconductor such as niobium of NbTi, Nb/sub 3/Sn or Nb/sub 3/Ge. In general, each layer of the niobium-containing superconductor has a thickness in the range of about 0.05 to 1.5 times its coherence length (which for Nb/sub 3/Si is 41 A) with each copper layer having a thickness in the range of about 170 to 600 A. With the use of very thin layers of the niobium composition having a thickness within the desired range, the critical field (H/sub c/) may be increased by factors of 2 to 4. Also, the thin layers of the superconductor permit the resulting tape or wire to exhibit suitable ductility for winding on a magnet core. These compositions are also characterized by relatively high values of critical temperature and therefore will exhibit a combination of useful properties as superconductors.

  12. Pathogenic and Ice-Nucleation Active (INA) Bacteria causing Dieback of Willows in Short Rotation Forestry

    Energy Technology Data Exchange (ETDEWEB)

    Nejad, Pajand

    2005-03-01

    To find out whether bacteria isolated from diseased plant parts can be the main causal agent for the dieback appearing in Salix energy forestry plantations in Sweden during the last few years, and if the joint effects of bacteria and frost injury are synergistic, extensive sampling of shoots from diseased Salix plants was performed. We performed several laboratory and greenhouse investigations and used evaluation techniques on the functions of the Ice-Nucleation Active (INA) bacteria. We carried out a comparison between spring and autumn bacterial communities isolated from within (endophytically) and surface (epiphytically) plant tissues of Salix viminalis. Seasonal variation of bacteria in willow clones with different levels of frost sensitivity and symptoms of bacterial damage was also investigated. We further focussed on possible effect of fertilisation and nutrient availability on the bacterial community in relation to plant dieback in Estonian willow plantations. The identification and detection of INA bacteria which cause damage in combination with frost to willow (Salix spp) plants in late fall, winter and spring was performed using BIOLOG MicroPlate, biochemical tests, selective INA primers and 16S rDNA analysis. To distinguish the character for differentiation between these bacteria morphologically and with respect to growing ability different culture media were used. We studied the temperature, at which ice nucleation occurred for individual bacteria, estimated the population of INA bacteria, effect of growth limiting factors, and evaluated the effect of chemical and physical agents for disruption and possible inhibition of INA among individual bacterial strains. The concentration of carbon, nitrogen and phosphorus on INA is discussed. We demonstrate that among the bacterial isolates recovered from the willow plantations, there were many that were capable of ice nucleation at temperatures between -2 and -10 deg C, many that were capable of inducing a

  13. Differential evaluation of the magnetic state of wire packages

    Science.gov (United States)

    Gorkunov, E. S.; Povolotskaya, A. M.; Zadvorkin, S. M.

    2017-12-01

    In an effort to estimate the applicability of magnetic methods to the evaluation of the performance of steel ropes, have been made on specimens in the form of wire packages modeling section loss due to the wear and rupture of individual wires, as well as a change in the structural state of the wires in ropes working under high temperatures. A linear relationship between saturation induction and rope section reduction both under abrasion and due to the rupture of individual wires is demonstrated. The coercive force of the rope tested or the comparison of magnetic fluxes in the rope with those in the standard specimen in the field equal to the coercive force of the standard specimen can serve as informative parameters for the determination of changes in the structural state of the metal of a steel rope.

  14. Communication and wiring in the cortical connectome.

    Science.gov (United States)

    Budd, Julian M L; Kisvárday, Zoltán F

    2012-01-01

    In cerebral cortex, the huge mass of axonal wiring that carries information between near and distant neurons is thought to provide the neural substrate for cognitive and perceptual function. The goal of mapping the connectivity of cortical axons at different spatial scales, the cortical connectome, is to trace the paths of information flow in cerebral cortex. To appreciate the relationship between the connectome and cortical function, we need to discover the nature and purpose of the wiring principles underlying cortical connectivity. A popular explanation has been that axonal length is strictly minimized both within and between cortical regions. In contrast, we have hypothesized the existence of a multi-scale principle of cortical wiring where to optimize communication there is a trade-off between spatial (construction) and temporal (routing) costs. Here, using recent evidence concerning cortical spatial networks we critically evaluate this hypothesis at neuron, local circuit, and pathway scales. We report three main conclusions. First, the axonal and dendritic arbor morphology of single neocortical neurons may be governed by a similar wiring principle, one that balances the conservation of cellular material and conduction delay. Second, the same principle may be observed for fiber tracts connecting cortical regions. Third, the absence of sufficient local circuit data currently prohibits any meaningful assessment of the hypothesis at this scale of cortical organization. To avoid neglecting neuron and microcircuit levels of cortical organization, the connectome framework should incorporate more morphological description. In addition, structural analyses of temporal cost for cortical circuits should take account of both axonal conduction and neuronal integration delays, which appear mostly of the same order of magnitude. We conclude the hypothesized trade-off between spatial and temporal costs may potentially offer a powerful explanation for cortical wiring patterns.

  15. Wire and Packing Tape Sandwiches

    Science.gov (United States)

    Rabinowitz, Sandy

    2009-01-01

    In this article, the author describes how students can combine craft wire with clear packing tape to create a two-dimensional design that can be bent and twisted to create a three-dimensional form. Students sandwich wire designs between two layers of tape. (Contains 1 online resource.)

  16. Numerical Investigation of Corrugated Wire Mesh Laminate

    Directory of Open Access Journals (Sweden)

    Jeongho Choi

    2013-01-01

    Full Text Available The aim of this work is to develop a numerical model of Corrugated Wire Mesh Laminate (CWML capturing all its complexities such as nonlinear material properties, nonlinear geometry and large deformation behaviour, and frictional behaviour. Development of such a model will facilitate numerical simulation of the mechanical behaviour of the wire mesh structure under various types of loading as well as the variation of the CWML configuration parameters to tailor its mechanical properties to suit the intended application. Starting with a single strand truss model consisting of four waves with a bilinear stress-strain model to represent the plastic behaviour of stainless steel, the finite element model is gradually built up to study single-layer structures with 18 strands of corrugated wire meshes consistency and double- and quadruple-layered laminates with alternating crossply orientations. The compressive behaviour of the CWML model is simulated using contact elements to model friction and is compared to the load-deflection behaviour determined experimentally in uniaxial compression tests. The numerical model of the CWML is then employed to conduct the aim of establishing the upper and lower bounds of stiffness and load capacity achievable by such structures.

  17. Tuning the Electrical Conductivity of Nanotube-Encapsulated Metallocene Wires

    Science.gov (United States)

    García-Suárez, Víctor M.; Ferrer, Jaime; Lambert, Colin J.

    2006-03-01

    We analyze a new family of carbon nanotube-based molecular wires, formed by encapsulating metallocene molecules inside the nanotubes. Our simulations, which are based on a combination of nonequilibrium Green function techniques and density functional theory, indicate that these wires can be engineered to exhibit desirable magnetotransport effects for use in spintronics devices. The proposed structures should also be resilient to room-temperature fluctuations, and are expected to have a high yield.

  18. Growth and Characterization of Indium Doped ZnO Nano wires Using Thermal Evaporation Method

    International Nuclear Information System (INIS)

    Abrar Ismardi; Dee, C.F.; Majlis, B.Y.

    2011-01-01

    Indium doped ZnO nano wires were grown on silicon substrate using vapor thermal deposition method without using any catalyst. Morphological structures were extensively investigated using field emission scanning electron microscopy (FESEM) and show that the nano wires have uniformly hexagonal nano structures with diameters less than 100 nm and lengths from one to a few microns. The sample was measured for elemental composition with energy dispersive X-ray (EDX) spectroscopy, Zn, In and O elements were found on the sample. XRD spectrum of indium doped ZnO nano wires revealed that the nano wires have a high crystalline structure. (author)

  19. 3D Wire 2015

    DEFF Research Database (Denmark)

    Jordi, Moréton; F, Escribano; J. L., Farias

    , therefore, we’ve drawn conclusions and recommendations for future editions of the event, also generalizable to other experiences of gamification especially in events. This report details the methodology and working elements from the design phase, human resources and organization of production......This document is a general report on the implementation of gamification in 3D Wire 2015 event. As the second gamification experience in this event, we have delved deeply in the previous objectives (attracting public areas less frequented exhibition in previous years and enhance networking) and have...... proposed new ones (viralization of the event on social networks and improvement of the integration of international attendees). On the other hand we defined a set of research objectives related to the study of gamification in an eminently social place like an event. Most of the goals have been met and...

  20. Self-assembled InAs quantum dots. Properties, modification and emission processes

    International Nuclear Information System (INIS)

    Schramm, A.

    2007-01-01

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  1. Application of emitter-sample hybrid terahertz time-domain spectroscopy to investigate temperature-dependent optical constants of doped InAs.

    Science.gov (United States)

    Han, J W; Kim, M S; Song, M S; Kang, B Y; Cho, B K; Lee, J S

    2017-03-20

    We investigate temperature-dependent carrier dynamics of InAs crystal by using reflection-type terahertz time-domain spectroscopy, particularly with a recently developed emitter-sample hybrid structure. We successfully obtain the optical conductivity in a terahertz frequency of bulk InAs whose dc conductivity is in the range of 100-150  Ω-1 cm-1. We find that both real and imaginary parts of the optical conductivity can be fit well with the simple Drude model, and the free-carrier density and the scattering rate obtained from the fit are in good agreement with corresponding values obtained by using other techniques, such as the Hall measurement and the dc-resistivity measurement. These results clearly demonstrate that the proposed technique of adopting the emitter-sample hybrid structure can be exploited to determine temperature-dependent optical constants in a reflection geometry and hence to investigate electrodynamics of bulk metallic systems.

  2. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  3. 47 CFR 36.341 - Cable and wire facilities expenses-Account 6410 (Class B telephone companies); Accounts 6411...

    Science.gov (United States)

    2010-10-01

    ... structures, aerial cable, underground cable, buried cable, submarine cable, deep sea cable, intrabuilding... 47 Telecommunication 2 2010-10-01 2010-10-01 false Cable and wire facilities expenses-Account 6410... Operating Expenses and Taxes Cable and Wire Facilities Expenses § 36.341 Cable and wire facilities expenses...

  4. Disorder and Interaction Effects in Quantum Wires

    International Nuclear Information System (INIS)

    Smith, L W; Ritchie, D A; Farrer, I; Griffiths, J P; Jones, G A C; Thomas, K J; Pepper, M

    2012-01-01

    We present conductance measurements of quasi-one-dimensional quantum wires affected by random disorder in a GaAs/AlGaAs heterostructure. In addition to quantised conductance plateaux, we observe structure superimposed on the conductance characteristics when the channel is wide and the density is low. Magnetic field and temperature are varied to characterize the conductance features which depend on the lateral position of the 1D channel formed in a split-gate device. Our results suggest that there is enhanced backscattering in the wide channel limit, which gives rise to quantum interference effects. When the wires are free of disorder and wide, the confinement is weak so that the mutual repulsion of the electrons forces a single row to split into two. The relationship of this topological change to the disorder in the system will be discussed.

  5. Plasma chemistry in wire chambers

    International Nuclear Information System (INIS)

    Wise, J.

    1990-05-01

    The phenomenology of wire chamber aging is discussed and fundamentals of proportional counters are presented. Free-radical polymerization and plasma polymerization are discussed. The chemistry of wire aging is reviewed. Similarities between wire chamber plasma (>1 atm dc-discharge) and low-pressure rf-discharge plasmas, which have been more widely studied, are suggested. Construction and use of a system to allow study of the plasma reactions occurring in wire chambers is reported. A proportional tube irradiated by an 55 Fe source is used as a model wire chamber. Condensable species in the proportional tube effluent are concentrated in a cryotrap and analyzed by gas chromatography/mass spectrometry. Several different wire chamber gases (methane, argon/methane, ethane, argon/ethane, propane, argon/isobutane) are tested and their reaction products qualitatively identified. For all gases tested except those containing methane, use of hygroscopic filters to remove trace water and oxygen contaminants from the gas resulted in an increase in the average molecular weight of the products, consistent with results from low-pressure rf-discharge plasmas. It is suggested that because water and oxygen inhibit polymer growth in the gas phase that they may also reduce polymer deposition in proportional tubes and therefore retard wire aging processes. Mechanistic implications of the plasma reactions of hydrocarbons with oxygen are suggested. Unresolved issues in this work and proposals for further study are discussed

  6. Influence of magnetic moment formation on the conductance of coupled quantum wires

    International Nuclear Information System (INIS)

    Puller, V I; Mourokh, L G; Bird, J P; Ochiai, Y

    2005-01-01

    In this paper, we develop a model for the resonant interaction between a pair of coupled quantum wires, under conditions where self-consistent effects lead to the formation of a local magnetic moment in one of the wires. Our analysis is motivated by the experimental results of Morimoto et al (2003 Appl. Phys. Lett. 82 3952), who showed that the conductance of one of the quantum wires exhibits a resonant peak at low temperatures, whenever the other wire is swept into the regime where local-moment formation is expected. In order to account for these observations, we develop a theoretical model for the inter-wire interaction that calculated the transmission properties of one (the fixed) wire when the device potential is modified by the presence of an extra scattering term, arising from the presence of the local moment in the swept wire. To determine the transmission coefficients in this system, we derive equations describing the dynamics of electrons in the swept and fixed wires of the coupled-wire geometry. Our analysis clearly shows that the observation of a resonant peak in the conductance of the fixed wire is correlated to the appearance of additional structure (near 0.75 x 2e 2 /h or 0.25 x 2e 2 /h) in the conductance of the swept wire, in agreement with the experimental results of Morimoto et al

  7. Seeded perturbations in wire array z-pinches

    International Nuclear Information System (INIS)

    Robinson, Allen Conrad; Kantsyrev, Victor Leonidovich; Wunsch, Scott Edward; Oliver, Bryan Velten; Lebedev, Sergey V.; Safronova, Alla S.; Maxwell, J.; McKenney, John Lee; Ampleford, David J.; Rapley, J.; Bott, S.C.; Palmer, J.B.A.; Bland, Simon Nicholas; Jones, Brent Manley; Chittenden, Jeremy Paul; Garasi, Christopher Joseph; Hall, Gareth Neville; Mehlhorn, Thomas Alan; Deeney, Christopher

    2004-01-01

    The impact of 3D structure on wire array z-pinch dynamics is a topic of current interest, and has been studied by the controlled seeding of wire perturbations. First, Al wires were etched at Sandia, creating 20% radial perturbations with variable axial wavelength. Observations of magnetic bubble formation in the etched regions during experiments on the MAGPIE accelerator are discussed and compared to 3D MHD modeling. Second, thin NaF coatings of 1 mm axial extent were deposited on Al wires and fielded on the Zebra accelerator. Little or no axial transport of the NaF spectroscopic dopant was observed in spatially resolved K-shell spectra, which places constraints on particle diffusivity in dense z-pinch plasmas. Finally, technology development for seeding perturbations is discussed

  8. Direct evidence of strain transfer for InAs island growth on compliant Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

    2015-04-13

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

  9. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  10. Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Mueller, P.

    1990-01-01

    Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates τ ρ -1 - ρne 2 /m * and τ x -1 2πkub(B)X/h/2π (where X is the Dingle temperature). The measured conduction electron density after irradiation and thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given. (author)

  11. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

    Science.gov (United States)

    Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

    2018-05-01

    A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

  12. 49 CFR 393.28 - Wiring systems.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Wiring systems. 393.28 Section 393.28... NECESSARY FOR SAFE OPERATION Lamps, Reflective Devices, and Electrical Wiring § 393.28 Wiring systems. Electrical wiring shall be installed and maintained to conform to SAE J1292—Automobile, Truck, Truck-Tractor...

  13. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Yang, Tao

    2017-06-01

    We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.

  14. Studies on the controlled growth of InAs nanostructures on scission surfaces; Untersuchungen zum kontrollierten Wachstum von InAs-Nanostrukturen auf Spaltflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, J.

    2006-01-15

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {l_brace}110{r_brace}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {l_brace}110{r_brace}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  15. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  16. AC loss properties of MgB{sub 2} multifilament wires

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Kazuhide; Funaki, Kazuo; Sueyoshi, Takahiro; Sasashige, Yushi; Kajikawa, Kazuhiro; Iwakuma, Masataka [Kyushu University Graduate School of Information Science and Electrical Engineering, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395 (Japan); Okada, Michiya [HRL Hitachi, Ltd, 7-1-1 Oomika, Hitachi 319-1292 (Japan); Kumakura, Hiroaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Hayashi, Hidemi [Kyushu Electric Power Co., Incorporated, 2-1-47 Shiobaru, Minami-ku, Fukuoka 815-8520 (Japan)], E-mail: kazuhide.tanaka.je@hitachi.com

    2008-09-15

    We designed and fabricated two types of composite wires with 6 MgB{sub 2} filaments. One is a Cu-sheathed Nb-barrier wire and the other is a CuNi-sheathed Ta-barrier wire. The transverse-field losses of the trial wires were measured with a standardized pickup coil system in liquid helium. We evaluated the observed AC losses using two structural models, a multifilament conductor model and a hollow-cylindrical one. For the CuNi-sheathed Ta-barrier wire, the AC loss property can be explained by the usual model of multifilament conductors. Further reductions in AC loss can be expected by making the filaments thinner. For the Cu-sheathed Nb-barrier wire, theoretical considerations suggest the multifilament structure behaves as a hollow-cylindrical superconductor in the AC loss property. Thus, we need to pay particular attention to designing the barrier material for reduction in the AC loss.

  17. Modeling birds on wires.

    Science.gov (United States)

    Aydoğdu, A; Frasca, P; D'Apice, C; Manzo, R; Thornton, J M; Gachomo, B; Wilson, T; Cheung, B; Tariq, U; Saidel, W; Piccoli, B

    2017-02-21

    In this paper we introduce a mathematical model to study the group dynamics of birds resting on wires. The model is agent-based and postulates attraction-repulsion forces between the interacting birds: the interactions are "topological", in the sense that they involve a given number of neighbors irrespective of their distance. The model is first mathematically analyzed and then simulated to study its main properties: we observe that the model predicts birds to be more widely spaced near the borders of each group. We compare the results from the model with experimental data, derived from the analysis of pictures of pigeons and starlings taken in New Jersey: two different image elaboration protocols allow us to establish a good agreement with the model and to quantify its main parameters. We also discuss the potential handedness of the birds, by analyzing the group organization features and the group dynamics at the arrival of new birds. Finally, we propose a more refined mathematical model that describes landing and departing birds by suitable stochastic processes. Copyright © 2016 Elsevier Ltd. All rights reserved.

  18. Molecular wires, switches and memories

    Science.gov (United States)

    Chen, Jia

    Molecular electronics, an emerging field, makes it possible to build individual molecules capable of performing functions identical or analogous to present- day conductors, switches, or memories. These individual molecules, with a nano-meter scale characteristic length, can be designed and chemically synthesized with specific atoms, geometries and charge distribution. This thesis focuses on the design, and measurements of molecular wires, and related strategically engineered structures-molecular switches and memories. The experimental system relies on a thermodynamically driven self-assembling process to attach molecules onto substrate surfaces without intervention from outside. The following topics will be discussed: directed nanoscale manipulation of self-assembled molecules using scanning tunneling microscope; investigation on through-bond transport of nanoscale symmetric metal/conjugated self- assembled monolayers (SAM)/metal junctions, where non- Ohmic thermionic emission was observed to be the dominant process, with isocyanide-Pd contacts showing the lowest thermionic barrier of 0.22 eV; the first realization of robust and large reversible switching behavior in an electronic device that utilizes molecules containing redox centers as the active component, exhibiting negative differential resistance (NDR) and large on-off peak-to-valley ratio (PVR); observation of erasable storage of higher conductivity states in these redox- center containing molecular devices, and demonstration of a two-terminal electronically programmable and erasable molecular memory cell with long bit retention time.

  19. Topology Optimized Photonic Wire Splitters

    DEFF Research Database (Denmark)

    Frandsen, Lars Hagedorn; Borel, Peter Ingo; Jensen, Jakob Søndergaard

    2006-01-01

    Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm.......Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm....

  20. Composite conductor containing superconductive wires

    Energy Technology Data Exchange (ETDEWEB)

    Larson, W.L.; Wong, J.

    1974-03-26

    A superconductor cable substitute made by coworking multiple rods of superconductive niobium--titanium or niobium--zirconium alloy with a common copper matrix to extend the copper and rods to form a final elongated product which has superconductive wires distributed in a reduced cross-section copper conductor with a complete metallurgical bond between the normal-conductive copper and the superconductor wires contained therein is described. The superconductor cable can be in the form of a tube.

  1. Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

    Energy Technology Data Exchange (ETDEWEB)

    Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

    1995-12-31

    Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

  2. 30 CFR 75.701-4 - Grounding wires; capacity of wires.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding wires; capacity of wires. 75.701-4... SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.701-4 Grounding wires; capacity of wires. Where grounding wires are used to ground metallic sheaths, armors, conduits, frames...

  3. 1 mil gold bond wire study.

    Energy Technology Data Exchange (ETDEWEB)

    Huff, Johnathon; McLean, Michael B.; Jenkins, Mark W.; Rutherford, Brian Milne

    2013-05-01

    In microcircuit fabrication, the diameter and length of a bond wire have been shown to both affect the current versus fusing time ratio of a bond wire as well as the gap length of the fused wire. This study investigated the impact of current level on the time-to-open and gap length of 1 mil by 60 mil gold bond wires. During the experiments, constant current was provided for a control set of bond wires for 250ms, 410ms and until the wire fused; non-destructively pull-tested wires for 250ms; and notched wires. The key findings were that as the current increases, the gap length increases and 73% of the bond wires will fuse at 1.8A, and 100% of the wires fuse at 1.9A within 60ms. Due to the limited scope of experiments and limited data analyzed, further investigation is encouraged to confirm these observations.

  4. HTS Wire Development Workshop: Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    1994-07-01

    The 1994 High-Temperature Superconducting Wire Development Workshop was held on February 16--17 at the St. Petersburg Hilton and Towers in St. Petersburg, Florida. The meeting was hosted by Florida Power Corporation and sponsored by the US Department of Energy`s Superconductivity Program for Electric Power Systems. The meeting focused on recent high-temperature superconducting wire development activities in the Department of Energy`s Superconductivity Systems program. The meeting opened with a general discussion on the needs and benefits of superconductivity from a utility perspective, the US global competitiveness position, and an outlook on the overall prospects of wire development. The meeting then focused on four important technology areas: Wire characterization: issues and needs; technology for overcoming barriers: weak links and flux pinning; manufacturing issues for long wire lengths; and physical properties of HTS coils. Following in-depth presentations, working groups were formed in each technology area to discuss the most important current research and development issues. The working groups identified research areas that have the potential for greatly enhancing the wire development effort. These areas are discussed in the summary reports from each of the working groups. This document is a compilation of the workshop proceedings including all general session presentations and summary reports from the working groups.

  5. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

    Science.gov (United States)

    Anyebe, Ezekiel A.; Sandall, I.; Jin, Z. M.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, Timothy D.; Cao, Y. C.; Li, H. D.; Harvey, R.; Zhuang, Q. D.

    2017-04-01

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

  6. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Science.gov (United States)

    Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

    2017-07-01

    InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

  7. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.

    Science.gov (United States)

    Anyebe, Ezekiel A; Sandall, I; Jin, Z M; Sanchez, Ana M; Rajpalke, Mohana K; Veal, Timothy D; Cao, Y C; Li, H D; Harvey, R; Zhuang, Q D

    2017-04-10

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

  8. Geometric factors in the magnetoresistance of n-doped InAs epilayers

    KAUST Repository

    Sun, Jian

    2013-11-27

    We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

  9. Wiring cost and topological participation of the mouse brain connectome.

    Science.gov (United States)

    Rubinov, Mikail; Ypma, Rolf J F; Watson, Charles; Bullmore, Edward T

    2015-08-11

    Brain connectomes are topologically complex systems, anatomically embedded in 3D space. Anatomical conservation of "wiring cost" explains many but not all aspects of these networks. Here, we examined the relationship between topology and wiring cost in the mouse connectome by using data from 461 systematically acquired anterograde-tracer injections into the right cortical and subcortical regions of the mouse brain. We estimated brain-wide weights, distances, and wiring costs of axonal projections and performed a multiscale topological and spatial analysis of the resulting weighted and directed mouse brain connectome. Our analysis showed that the mouse connectome has small-world properties, a hierarchical modular structure, and greater-than-minimal wiring costs. High-participation hubs of this connectome mediated communication between functionally specialized and anatomically localized modules, had especially high wiring costs, and closely corresponded to regions of the default mode network. Analyses of independently acquired histological and gene-expression data showed that nodal participation colocalized with low neuronal density and high expression of genes enriched for cognition, learning and memory, and behavior. The mouse connectome contains high-participation hubs, which are not explained by wiring-cost minimization but instead reflect competitive selection pressures for integrated network topology as a basis for higher cognitive and behavioral functions.

  10. Dendritic and Axonal Wiring Optimization of Cortical GABAergic Interneurons.

    Science.gov (United States)

    Anton-Sanchez, Laura; Bielza, Concha; Benavides-Piccione, Ruth; DeFelipe, Javier; Larrañaga, Pedro

    2016-10-01

    The way in which a neuronal tree expands plays an important role in its functional and computational characteristics. We aimed to study the existence of an optimal neuronal design for different types of cortical GABAergic neurons. To do this, we hypothesized that both the axonal and dendritic trees of individual neurons optimize brain connectivity in terms of wiring length. We took the branching points of real three-dimensional neuronal reconstructions of the axonal and dendritic trees of different types of cortical interneurons and searched for the minimal wiring arborization structure that respects the branching points. We compared the minimal wiring arborization with real axonal and dendritic trees. We tested this optimization problem using a new approach based on graph theory and evolutionary computation techniques. We concluded that neuronal wiring is near-optimal in most of the tested neurons, although the wiring length of dendritic trees is generally nearer to the optimum. Therefore, wiring economy is related to the way in which neuronal arborizations grow irrespective of the marked differences in the morphology of the examined interneurons.

  11. Finite element simulation of impact response of wire mesh screens

    Directory of Open Access Journals (Sweden)

    Wang Caizheng

    2015-01-01

    Full Text Available In this paper, the response of wire mesh screens to low velocity impact with blunt objects is investigated using finite element (FE simulation. The woven wire mesh is modelled with homogeneous shell elements with equivalent smeared mechanical properties. The mechanical behaviour of the woven wire mesh was determined experimentally with tensile tests on steel wire mesh coupons to generate the data for the smeared shell material used in the FE. The effects of impacts with a low mass (4 kg and a large mass (40 kg providing the same impact energy are studied. The joint between the wire mesh screen and the aluminium frame surrounding it is modelled using contact elements with friction between the corresponding elements. Damage to the screen of different types compromising its structural integrity, such as mesh separation and pulling out from the surrounding frame is modelled. The FE simulation is validated with results of impact tests conducted on woven steel wire screen meshes.

  12. Mechanical characterisation of orthodontic superelastic Ni-Ti wires

    Energy Technology Data Exchange (ETDEWEB)

    Arrigoni, M.; Pietrabissa, R. [Politecnico di Milano, Milano (Italy). Lab. of Biological Structure Mechanics; Auricchio, F.; Petrini, L. [Politecnico di Milano, Milano (Italy). Lab. of Biological Structure Mechanics; Pavia Univ. (Italy). Dept. of Structural Mechanics; Cacciafesta, V. [Politecnico di Milano, Milano (Italy). Lab. of Biological Structure Mechanics; Pavia Univ. (Italy). Dept. of Orthodontia

    2001-11-01

    Nowadays, the orthodontic treatment is improving thanks to the introduction of Ni-Ti super-elastic alloy wires in the ordinary therapy. Indeed, laboratory tests performed in the last decade have shown that Ni-Ti superelastic wires are able to satisfy the ideal requirements for fixed arch-wire appliance: high flexibility, minimal distortion or plastic deformation, light constant force production over a wide range of displacements. On the other hand, many orthodontic companies produce Ni-Ti arch-wires, without giving detailed specifications on their superelastic characteristics. To improve the knowledge on real properties for these products, an experimental campaign on different commercial arch-wires has been started at the Laboratory of Biological Structure Mechanics (LABS) at the Politecnico di Milano (Italy). This work presents the first step of the research, concerning the comparison between the behaviour of four types of wires (two produced by ORMCO and two produced by 3M/Unitek) under monotonic and cyclic isothermal tensile tests. The results show significant differences between the products in terms of elastic modulus, stress values of the loading-unloading plateau, hysteresis amplitude, spring-back capacity, shape recovery capability, strain rate effect and fatigue behaviour. (orig.)

  13. In-situ transmission electron microscopy observation of electromigration in Au thin wires.

    Science.gov (United States)

    Murakami, Yosuke; Arita, Masashi; Hamada, Kouichi; Takahashi, Yasuo

    2012-11-01

    Electromigration of thin Au wire is studied by the use of in-situ transmission electron microscopy (TEM) techniques from the viewpoint of nanogap formation. We use a relatively wide Au wire as a starting material because the position-dependent structure change in the wire provides information of the thermal effect caused by the current flow. In-situ TEM observation, in which current measurements of the Au wire are simultaneously performed, reveals the process of the growth of voids and grains. Finally the formation of a nanogap by electromigration is observed doing with current measurements. All the results observed by in-situ TEM indicate the fact that the thermal effects or temperature increase in the wire region take an important role for the structure change caused by electromigration of Au in the wire. It is suggested that the position of the nanogap can roughly be arranged by setting the wire structure and current direction even though a relatively wide wire was used. The detailed observation by in-situ TEM also suggests that the control of heat generation in the wire makes the nanogap sharp because of the well-controlled recrystallization of Au nanowires.

  14. Elastic limit and strain hardening of thin wires in torsion.

    Science.gov (United States)

    Dunstan, D J; Ehrler, B; Bossis, R; Joly, S; P'ng, K M Y; Bushby, A J

    2009-10-09

    A theory for the size effect in the strength of wires under torsion is reported and compared with data from thin copper wires. Critical thickness theory is solved rigorously and used to validate a useful approximation which is combined with slip-distance theory modified for a finite structure size. Experimental data with high accuracy around and above the elastic limit show excellent agreement with the theory. The results strongly imply that the physical principle is the constraint that size, whether grain size or structure size, puts on allowed dislocation curvature.

  15. Adhesion strength study of IBAD-MOCVD-based 2G HTS wire using a peel test

    International Nuclear Information System (INIS)

    Zhang, Y.; Hazelton, D.W.; Knoll, A.R.; Duval, J.M.; Brownsey, P.; Repnoy, S.; Soloveichik, S.; Sundaram, A.; McClure, R.B.; Majkic, G.; Selvamanickam, V.

    2012-01-01

    A peel test was used to study the adhesion strength of a commercial grade 2G HTS wire which features a characteristic multilayer structure with the rare earth-based MOCVD superconducting film deposited on an IBAD-MgO template. The peel test could be carried out at various peeling angles (from 90° to 180°) and the peel strength of a wire was defined as the steady-state peeling load determined from a load-displacement curve. The test results had good reproducibility and accuracy, making the test a reliable and useful method for studying the adhesion strength of the wire. By characterizing the peeled surfaces the weakest interface in a wire could be identified. The peel strength data of the wire was analyzed together with the performance of the experimental magnet coils fabricated using the wire. The effect of the silver contact layer annealing on the peel strength is discussed.

  16. Adhesion strength study of IBAD-MOCVD-based 2G HTS wire using a peel test

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y., E-mail: yzhang@superpower-inc.com [SuperPower Inc., 450 Duane Avenue, Schenectady, NY 12304 (United States); Hazelton, D.W.; Knoll, A.R.; Duval, J.M.; Brownsey, P.; Repnoy, S.; Soloveichik, S.; Sundaram, A.; McClure, R.B. [SuperPower Inc., 450 Duane Avenue, Schenectady, NY 12304 (United States); Majkic, G.; Selvamanickam, V. [University of Houston, 4800 Calhoun Road, Houston, TX 77204 (United States)

    2012-02-15

    A peel test was used to study the adhesion strength of a commercial grade 2G HTS wire which features a characteristic multilayer structure with the rare earth-based MOCVD superconducting film deposited on an IBAD-MgO template. The peel test could be carried out at various peeling angles (from 90 Degree-Sign to 180 Degree-Sign) and the peel strength of a wire was defined as the steady-state peeling load determined from a load-displacement curve. The test results had good reproducibility and accuracy, making the test a reliable and useful method for studying the adhesion strength of the wire. By characterizing the peeled surfaces the weakest interface in a wire could be identified. The peel strength data of the wire was analyzed together with the performance of the experimental magnet coils fabricated using the wire. The effect of the silver contact layer annealing on the peel strength is discussed.

  17. GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

    Science.gov (United States)

    Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2017-04-01

    We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω1, ω2, and ω3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω1 - ω2 = ω2 - ω3) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω1 and ω2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω3 (= 2ω2 - ω1) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.

  18. Nanoline templates for single atom wires on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Koester, Sigrun A.; Owen, James H.G.; Bianco, Francois; Mazur, Daniel; Renner, Chrisoph [Universite de Geneve, Section Physique/DPMC, Geneve (Switzerland); Rodriguez-Prieto, Alvaro; Bowler, David R. [London Centre for Nanotechnology (LCN), University College London (United Kingdom)

    2010-07-01

    Low dimensional structures are of wide scientific and technological interest. The physics of single atom metallic wires is already described in detail by theory, but a more systematic experimental verification is still desirable. The experimental problems are mainly caused by the difficulties of growing electronically isolated wires which is necessary to test the expected properties from existing theories. Here we introduce templates on a Si(001) surface which enable the growth of self-assembled single atom wires on top of them. The main template consists of a Si reconstruction called the Haiku structure which develops underneath self-assembled Bi nanowires. By hydrogenation the Si surface can be passivated and additionally the Bi dimers are stripped off while the underlying reconstruction of the Si surface remains intact. In addition the Bi nanowire by itself can be considered as a template.

  19. Magnetoresistance peculiarities of bismuth wires in high magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Condrea, E., E-mail: condrea@nano.asm.md [Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, 2028 Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 51-421 Wroclaw (Poland); Gilewski, A. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 51-421 Wroclaw (Poland); MagNet, 50-421 Wroclaw (Poland); Nicorici, A. [Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, 2028 Chisinau, Republic of Moldova (Moldova, Republic of)

    2016-03-11

    Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found. - Highlights: • Glass-coated single-crystalline Bi wires attain high limit of elastic strain of up to 3.0%. • Selective modification of the electronic structure of Bi wires is obtained by combining a high magnetic field and uniaxial strain. • The correlation between the exit of the lowest Landau level of electrons and Lifshitz transition was found.

  20. Magnetoresistance peculiarities of bismuth wires in high magnetic field

    International Nuclear Information System (INIS)

    Condrea, E.; Gilewski, A.; Nicorici, A.

    2016-01-01

    Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found. - Highlights: • Glass-coated single-crystalline Bi wires attain high limit of elastic strain of up to 3.0%. • Selective modification of the electronic structure of Bi wires is obtained by combining a high magnetic field and uniaxial strain. • The correlation between the exit of the lowest Landau level of electrons and Lifshitz transition was found.

  1. Comparison of Superelasticity of Nickel Titanium Orthodontic Arch wires using Mechanical Tensile Testing and Correlating with Electrical Resistivity.

    Science.gov (United States)

    Sivaraj, Aravind

    2013-06-01

    Application of light and continuous forces for optimum physiological response and least damage to the tooth supporting structures should be the primary aim of the orthodontist. Nickel titanium alloys with the properties of excellent spring back, super elasticity and wide range of action is one of the natural choices for the clinicians to achieve this goal. In recent periods, various wire manufacturers have come with a variety of wires exhibiting different properties. It is the duty of the clinician to select appropriate wires during various stages of treatment for excellent results. For achieving this evaluation of the properties of these wires is essential. This study is focussed on evaluating the super elastic property of eight groups of austenite active nickel titanium wires. Eight groups of archwires bought from eight different manufacturers were studied. These wires were tested through mechanical tensile testing and electrical resistivity methods. Unloading curves were carefully assessed for superelastic behaviour on deactivation. Rankings of the wires tested were based primarily upon the unloading curve's slope Conclusion: Ortho organisers wires ranked first and superior, followed by American Orthodontics and Ormco A wires. Morelli and GAClowland NiTi wires were ranked last. It can be concluded that the performance of these wires based on rankings should be further evaluated by clinical studies. How to cite this article: Sivaraj A. Comparison of Superelasticity of Nickel Titanium Orthodontic Arch wires using Mechanical Tensile Testing and Correlating with Electrical Resistivity. J Int Oral Health 2013; 5(3):1-12.

  2. Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Guo, Wenlong [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Xu, Sheng [School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Qu, Changqing; Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2014-10-30

    Highlights: • The capacitance of graphene/tantalum (Ta) wire electrodes is firstly reported. • Graphene was grown on the Ta surface by hot-filament chemical vapor deposition. • Graphene/Ta wire structure is favorable for fast ion and electron transfer. • The graphene/Ta wire electrode shows high capacitive properties. - Abstract: This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3–3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na{sub 2}SO{sub 4} aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g{sup −1} at current density of 0.5 A g{sup −1}. The capacitance remains at about 84% after 1000 cycles at 10 A g{sup −1}. The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices.

  3. Synthesise of Zn O nano wires by direct oxidation method

    International Nuclear Information System (INIS)

    Farbod, M.; Ahangarpour, A.

    2007-01-01

    Zn O is a semiconductor which has a direct and wide energy band which is about 3.37 eV at room temperature. It has various applications from UV lasers, sensitive sensors, solar cells to photo catalysis applications. Zn O has different nano structures such as nanoparticles, nano wires, nano rods, nano tubes and nano belts. The one dimensional Zn O nano structures such as nano wires are very important because of their applications in nano electronics and nano photonics so different methods have been proposed to synthesize them. In this work large scale of Zn O nano wires are produced by direct oxidation a Zn substrate (which was cleaned by chemical methods) in air or oxygen atmosphere at 400 d eg C . Nano wires were investigated by scanning electron microscopy and energy dispersive x-ray measurements. Their diameter is about 30-150 nanometer and their length is about several micrometer. This method which acts without any catalyst is a convenient method to synthesis semiconductor nano wires.

  4. Investigation of exploding wire in different experimental conditions

    Science.gov (United States)

    Sarkisov, Gennady; Struve, Kenneth; Rosenthal, Stephen; Sasorov, Pavel

    2001-10-01

    The initial stage of electrical explosion of thin metal wires in different experimental conditions has been investigated. A pulser (3kA, 120kV) with fast (150A/ns) and slow (20A/ns) operational modes has been used. Current, voltage, laser-streaked images on 905nm, visible light emission have been monitored during the experiment. Two-wavelengths laser shadowgraphy and interferometry with 150ps pulse duration have been used to get information about shape and electron density. Different substances, diameters, lengths, target configurations, vacuum or air environment, surface conditions, cold or hot start and influence of pulser polarity have been investigated. Energy deposition is dramatically dependent from current rate and voltage polarity. Increasing of the current rate allows more energy deposition before surface breakdown. Changing polarity of the pulser from positive to negative in vacuum results in decrease of energy deposition into the wire and change of its structure. Direction of radial electric field becomes important for initial stage of wire explosion. These results can be understood in terms of influence of electronic emissions on triggering the plasma shell around the wire. The structure of radial electric field surrounding the wire has been simulated using 2D electrostatic code. Results of experiments have been compared with 2D MHD simulations.

  5. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  6. Wire Rupture Optimization in Wire Electrical Discharge Machining using Taguchi Approach

    Directory of Open Access Journals (Sweden)

    Maher Ibrahem

    2017-01-01

    Full Text Available Wire electrical discharge machining (WEDM is one of the most important nontraditional machining process that is well-known for cutting difficult to machine materials. The wire electrode along with machining parameters control the WEDM process. This research work focuses on optimizing WEDM parameters using Taguchi technique to minimize wire rupture. Experiments have been done using the L18 orthogonal array. Each experiment is repeated three times to ensure accurate readings of the wire rupture. The statistical methods of signal to noise ratio (S/N ratio is applied to study effects of peak current, pulse width, charging time, wire speed, and wire tension on wire rupture. As a results, the peak current, pulse width, and wire tension have the most significant effect on wire rupture followed by charging time and wire speed. The developed analysis can be used in the metal cutting field to identify the optimum machining parameters for less wire rupture.

  7. Coupling electromagnetic pulse-shaped waves into wire-like interconnection structures with a non-linear protection – Time domain calculations by the PEEC method

    Directory of Open Access Journals (Sweden)

    G. Wollenberg

    2004-01-01

    Full Text Available An interconnection system whose loads protected by a voltage suppressor and a low-pass filter against overvoltages caused by coupling pulse-shaped electromagnetic waves is analyzed. The external wave influencing the system is assumed as a plane wave with HPM form. The computation is provided by a full-wave PEEC model for the interconnection structure incorporated in the SPICE code. Thus, nonlinear elements of the protection circuit can be included in the calculation. The analysis shows intermodulation distortions and penetrations of low frequency interferences caused by intermodulations through the protection circuits. The example examined shows the necessity of using full-wave models for interconnections together with non-linear circuit solvers for simulation of noise immunity in systems protected by nonlinear devices.

  8. Enhancing wire-composite bond strength of bonded retainers with wire surface treatment.

    Science.gov (United States)

    Oesterle, L J; Shellhart, W C; Henderson, S

    2001-06-01

    Bonded orthodontic retainers with wires embedded in composite resin are commonly used for orthodontic retention. The purpose of this study was to test, in vitro, various wire surface treatments to determine the optimal method of enhancing the wire-composite bond strength. Coaxial wires and stainless steel wires with different surface treatments were bonded to bovine enamel and then pulled along their long axes with an Instron universal testing machine. Wire surface treatments included placing a right-angle bend in the wire, microetching the wire, and treating the wire with adhesion promoters; combinations of treatments were also examined. The results demonstrated a 24-fold increase in the wire-composite bond strength of wire that was microetched (sandblasted), compared with that of untreated straight wire. The difference between the amount of force required to break the bond produced by microetching alone (246.1 +/- 46.0 MPa) and that required for the bonds produced by the retentive bend (87.8 +/- 16.3 MPa), the adhesion promoters (silane, 11.0 +/- 3.1 MPa; Metal Primer, 28.5 +/- 15.8 MPa), or for any combination of surface treatments, was statistically significant. Microetching a stainless steel wire produced a higher wire-composite bond strength than that obtained from a coaxial wire (113.5 +/- 27.5 MPa). The results of this study indicate that microetching or sandblasting a stainless steel wire significantly increases the strength of the wire-composite bond.

  9. Telecommuting: The Wired Worker.

    Science.gov (United States)

    Nilles, Jack M.

    1982-01-01

    Examines the use of home computers and how they allow the worker to work at home rather than commuting. Discusses the growing trend of telecommuting, cost of operation, how it will affect company structure, and productivity. (CT)

  10. Vulnerabilidad sísmica y capacidad de carga de un puente atirantado basados en confiabilidad estructural Seismic vulnerability and loading capacity of a wire strained bridge based on structural reliability

    Directory of Open Access Journals (Sweden)

    Edgar Muñoz

    2010-08-01

    tests, trials tests on material mechanical properties, environmental vibrations, measurements on the effects of traffic load, wireless instrumentation, loading tests, wire strainers tensile strength, etc. Additionally, the study explains structural models on finite elements, which were developed for the bridge, as well as its calibration process based on the loading test, and dynamical properties determined on experimental basis. Furthermore, the study indicates the way stress records collection of all structural elements was conducted, during the construction process, in accordance with the job site log-book. As for reliability, a seismic threat analysis was made as well as dynamic responses on the bridge site, where nine spectrums were obtained at different return periods. By studying strength probability curves and seismic loads of pylons, it was found they have reliability indexes in accordance with recommendations by the international regulations. However, one of the superstructure's elements, which were introduced to evaluate its capacity on traffic effects, has a reliability index far higher than the ranges recommended by international regulations. Finally, some wire strainers have higher level tensions than specifications admitted during its design and international recommendations for these kinds of bridges.

  11. PERBANDINGAN PERTUMBUHAN STREPTOCOCCUS MUTANS INA99 PADA BERBAGAI MEDIA PERBENIHAN PADAT

    Directory of Open Access Journals (Sweden)

    Yayuk Yuliarsi

    2015-07-01

    Full Text Available Previous study shows that tryptone-yeast extract-cystine-sucrose is choice of the culture media for isolating and growing S. mutans serotype C, but the effectiveness in stepping up the recovery growth of the bacteria has never been compared with that of the blood agar added to yeast extract and sucrose. This study was come to find out the growth of S. mutans serotype-c with blood agar-yest extract-sucrose, S. mutans INA99 serotype-c is identified, sliced, and cultured into blood agar-yeast extract-sucrose, brucella agar blood-yeast extract sucrose, blood agar and tryptone-yeast extract-cystine-sucrose, each 4 slices. The average amount of blood agar colonies that grows after an incubation of 2x24 hours in an anaerob conditionof 37 C, diluted by 40 time is 4.890. In blood agar-yeast extract-sucrose, the average colony is 145.600, diluted 1.600 time. In brucella agar blood-yeast extract-sucrose, the average colony is 103.50, diluted 40 times. In tryptone-yeast extract-cystine-sucrose the average colony is 2.430, diluted 40 times. Statistical result shows that, there are significant difference (p=0.000 between the total colonies of S. mutans INA99 serotype c which grows on the different types of culture media. The largest amount of colony is present on blood agar-yeast extract-sucrose, the followed by brucella agar blood-yeast extract-sucrose, blood agar and tryptone-yeast extract-cystine-sucrose. Conclusion : blood agar which added yeast extract and sucrose is the best culture media for S. mutans INA99 serotype c growth.

  12. Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Vasilopoulou, M., E-mail: mariva@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Stathopoulos, N.A.; Savaidis, S.A. [Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Kostis, I. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Papadimitropoulos, G. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Davazoglou, D., E-mail: d.davazoglou@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece)

    2015-09-30

    Graphical abstract: In this work we perform successful engineering of the anode of organic photovoltaics based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester blends by using metal oxide transport layers exhibiting shallow gap states which act as a barrier-free path for hole transport toward the anode. - Highlights: • Interface engineering of the anode. • Organic photovoltaics (OPVs). • Shallow gap states. • Barrier-free hole transport. • Design rules for interface engineering in OPVs. - Abstract: In this work we use hydrogen deposited molybdenum and tungsten oxides (chemically described as H:MO{sub x}x ≤ 3 where M = Mo or W) to control the energetics at the anode of bulk heterojunction (BHJ) organic photovoltaics (OPVs) based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester (P3HT:PC{sub 71}BM) blends. Significantly improved current densities and open circuit voltages were achieved as a result of improved hole transport from the P3HT highest occupied molecular orbital (HOMO) toward indium tin oxide (ITO) anode. This was attributed to the formation of shallow gap states in these oxides which are located just below the Fermi level and above the polymer HOMO and thus may act as a barrier-free path for the extraction of holes. Consequently, these states can be used for controlling the energetic structure of the anode of OPVs. By using ultraviolet photoelectron spectroscopy it was found that dependent on the deposition conditions these gap states and work function of the metal oxides may be tailored to contribute to the precise alignment of the HOMO of the organic semiconductor (OSC) with the Fermi level of the anode electrode resulting in further enhancement of the device performance.

  13. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  14. ESTUDO DE PRIMEIROS PRINCÍPIOS DE NANOFIOS DE INAS SUBMETIDOS A TENSÕES EXTREMAS

    OpenAIRE

    Leonardo Fernandes Sampaio

    2015-01-01

    Nanofios, devido às suas caracteristícas estruturais únicas, são candidatos naturais para dispositivos condutores de eletricidade e calor. Quando estes nanofios formam parte de um dispositivo, podem estar sujeitos a tensões externas que podem alterar as suas propriedades intrínsecas. Neste trabalho estudaremos o comportamento mecânico e eletrônico de nanofios de InAs com diferentes diâmetros quando sujeitos a tensões externas extremas. Nossos cálculos usam a Teoria do Funcional...

  15. Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

    International Nuclear Information System (INIS)

    Eble, B.; Krebs, O.; Voisin, P.; Lemaitre, A.; Kudelski, A.; Braun, P.F.; Lombez, L.; Marie, X.; Urbaszek, B.; Amand, T.; Lagarde, D.; Renucci, P.; Kowalik, K.; Kalevich, V.K.; Kavokin, K.V.

    2006-01-01

    We present a detailed study of the hyperfine interaction between carrier and nuclear spins in InAs semiconductor quantum dots. Time resolved measurements on excitons in positively charged quantum dots show the electron spin relaxation due to random fluctuations of the spin orientation of the nuclei in the quantum dot. A complimentary aspect of the hyperfine interaction can be uncovered in single dot continuous wave photoluminescence experiments in a weak magnetic field, namely the Overhauser shift due to the dynamic polarisation of the nuclei following excitation with circularly polarised light. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. PERBANDINGAN PERTUMBUHAN STREPTOCOCCUS MUTANS INA99 PADA BERBAGAI MEDIA PERBENIHAN PADAT

    OpenAIRE

    Yayuk Yuliarsi; Takarsyah M. Putra; Boedi Oe. Roeslan

    2015-01-01

    Previous study shows that tryptone-yeast extract-cystine-sucrose is choice of the culture media for isolating and growing S. mutans serotype C, but the effectiveness in stepping up the recovery growth of the bacteria has never been compared with that of the blood agar added to yeast extract and sucrose. This study was come to find out the growth of S. mutans serotype-c with blood agar-yest extract-sucrose, S. mutans INA99 serotype-c is identified, sliced, and cultured into blood agar-yeast ex...

  17. Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles

    Science.gov (United States)

    Li, Luying; Gan, Zhaofeng; McCartney, Martha R.; Liang, Hanshuang; Yu, Hongbin; Gao, Yihua; Wang, Jianbo; Smith, David J.

    2013-01-01

    The atomic arrangements of two types of InAs dislocation cores associated by a Z-shape faulted dipole are observed directly by aberration-corrected high-angle annular-dark-field imaging. Single unpaired columns of different atoms in a matrix of dumbbells are clearly resolved, with observable variations of bonding lengths due to excess Coulomb force from bare ions at the dislocation core. The corresponding geometric phase analysis provides confirmation that the dislocation cores serve as origins of strain field inversion while stacking faults maintain the existing strain status. PMID:24231692

  18. Spin-lattice relaxation times and knight shift in InSb and InAs

    International Nuclear Information System (INIS)

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  19. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Soerensen, B. S.; Aagesen, M.; Soerensen, C. B.; Lindelof, P. E.; Martinez, K. L.; Nygaard, J.

    2008-01-01

    We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowire surface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence (10-10 5 ) of the on-off ratio caused by the surface inversion layer

  20. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-11-07

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  1. Spectroscopy of shallow InAs/InP quantum wire nanostructures

    International Nuclear Information System (INIS)

    Mazur, Yu I; Dorogan, V G; Noda, S; Salamo, G J; Bierwagen, O; Masselink, W T; Tarasov, G G; Zhuchenko, Z Ya; DeCuir Jr, E A; Manasreh, M O

    2009-01-01

    A comprehensive investigation of the optical properties of InAs/InP(001) quantum wires (QWrs) and their parent quantum well system formed by the deposition of 4 ML (monolayers) of InAs on InP is carried out by means of temperature dependent photoluminescence (PL) and Fourier transform infrared spectroscopy. Unusual two-branch switching of the excitonic PL band maxima is revealed in the temperature dependence for both wires and wells. This is interpreted in terms of the thermal activation of excitonic ground states of the confined nanostructures. Strong modification of the absorbance line shape leading to the appearance of flat spectral regions in the room temperature spectrum of a QWr sample is interpreted in terms of thermally induced change of the dimensionality: from 1D to anisotropic 2D. This change of dimensionality is detected also in the polarized absorbance measurements through the disappearance or significant reduction of the polarization anisotropy in the regions of the hh1-e1 (hh: heavy hole; e: electron) and lh1-e1 (lh: light hole) transitions in QWrs.

  2. Novel Wiring Technologies for Aerospace Applications

    Science.gov (United States)

    Gibson, Tracy L.; Parrish, Lewis M.

    2014-01-01

    Because wire failure in aerospace vehicles could be catastrophic, smart wiring capabilities have been critical for NASA. Through the years, researchers at Kennedy Space Center (KSC) have developed technologies, expertise, and research facilities to meet this need. In addition to aerospace applications, NASA has applied its knowledge of smart wiring, including self-healing materials, to serve the aviation industry. This webinar will discuss the development efforts of several wiring technologies at KSC and provide insight into both current and future research objectives.

  3. Clinical bending of nickel titanium wires

    OpenAIRE

    Stephen Chain; Priyank Seth; Namrata Rastogi; Kenneth Tan; Mayank Gupta; Richa Singh

    2015-01-01

    Since the evolution and the involvement of Nickel Titanium wires in the field of Orthodontics. The treatment plan has evolved with the use of low force Nickel Titanium wires. Because of their high springback, low stiffness, they are the key initial wires in leveling and alignment but have poor formability. Since poor formability limits its ability to create variable arch forms thus; limits the form of treatment. We have devised a method to bend the Nickel Titanium wires to help in our invento...

  4. Towards Unconventional Applications of Wire Bonding

    OpenAIRE

    Schröder, Stephan

    2018-01-01

    This thesis presents novel heterogeneous integration approaches of wire materials to fabricated and package MEMS devices by exploring unconventional applications of wire bonding technology. Wire bonding, traditionally endemic in the realm of device packaging to establish electrical die-to-package interconnections, is an attractive back-end technology, offering promising features, such as high throughput, flexibility and placement accuracy. Exploiting the advantages of state-of-the-art wire bo...

  5. Different mechanical properties in Seldinger guide wires

    Directory of Open Access Journals (Sweden)

    Wolfram Schummer

    2015-01-01

    Full Text Available Background and Aims: Most central venous catheters are placed using Seldinger guide wires. EN ISO 11070 is the guideline for testing guide wire flexing performance and tensile strength, and we can safely assume that guide wires in use meet these requirements. Unfortunately, EN ISO 11070 guidelines do not reflect the clinical requirements and we continue to see mechanical failures and their associated complications. Material and Methods: This in vitro study was performed in an accredited laboratory. With regard to flexing, we: (1 Established the minimum flexing performance needed to meet clinical requirements, (2 developed flexing performance tests which mimic clinical requirement, and (3 evaluated the mechanical properties of various guide wires relative to these requirements. With regard to tensile strength, we used the testing method prescribed in ISO 11070, but did not end the test at 5 Newton (N. We continued until the guide wire was damaged, or we reached maximum tractive force. We then did a wire-to-wire comparison. We examined two basic wire constructions, monofil and core and coil. Results: Tensile strength: All wires tested, except one, met EN ISO 11070 requirements for 5 N tensile strength. The mean of the wire types tested ranged from 15.06 N to 257.76 N. Flexing performance: None of the wires kinked. The monofil had no evidence of bending. Two core/coil wires displayed minor bending (angle 1.5°. All other wires displayed bending angles between 22.5° and 43.0°. Conclusion: We recommend that: (1 Clinicians use guide wires with high-end mechanical properties, (2 EN ISO 11070 incorporate our flexing test into their testing method, raise the flexing requirement to kink-proof, (3 and raise the tensile strength requirement to a minimum of 30 N, and (3 all manufacturers and suppliers be required to display mechanical properties of all guide wire, and guide wire kits sold.

  6. Characteristics of the electrical explosion of fine metallic wires in vacuum

    Science.gov (United States)

    Wang, Kun; Shi, Zongqian; Shi, Yuanjie; Zhao, Zhigang

    2017-09-01

    The experimental investigations on the electrical explosion of aluminum, silver, tungsten and platinum wires are carried out. The dependence of the parameters related to the specific energy deposition on the primary material properties is investigated. The polyimide coatings are applied to enhance the energy deposition for the exploding wires with percent of vaporized energy less than unit. The characteristics of the exploding wires of different materials with and without insulating coatings are studied. The effect of wire length on the percent of vaporization energy for exploding coated wires is presented. A laser probe is employed to construct the shadowgraphy, schlieren and interferometry diagnostics. The optical diagnostics demonstrate the morphology of the exploding products and structure of the energy deposition. The influence of insulating coatings on different wire materials is analyzed. The expansion trajectories of the exploding wires without and with insulating coatings are estimated from the shadowgram. More specific energy is deposited into the coated wires of shorter wire length, leading to faster expanding velocity of the high-density products.

  7. Characteristics of the electrical explosion of fine metallic wires in vacuum

    Directory of Open Access Journals (Sweden)

    Kun Wang

    2017-09-01

    Full Text Available The experimental investigations on the electrical explosion of aluminum, silver, tungsten and platinum wires are carried out. The dependence of the parameters related to the specific energy deposition on the primary material properties is investigated. The polyimide coatings are applied to enhance the energy deposition for the exploding wires with percent of vaporized energy less than unit. The characteristics of the exploding wires of different materials with and without insulating coatings are studied. The effect of wire length on the percent of vaporization energy for exploding coated wires is presented. A laser probe is employed to construct the shadowgraphy, schlieren and interferometry diagnostics. The optical diagnostics demonstrate the morphology of the exploding products and structure of the energy deposition. The influence of insulating coatings on different wire materials is analyzed. The expansion trajectories of the exploding wires without and with insulating coatings are estimated from the shadowgram. More specific energy is deposited into the coated wires of shorter wire length, leading to faster expanding velocity of the high-density products.

  8. Vocational Preparation Curriculum: Electrical Wiring.

    Science.gov (United States)

    Usoro, Hogan

    This document is a curriculum guide for instructors teaching vocational preparation for electrical wiring to special needs students. The purpose of the curriculum guide is to provide minimum skills for disadvantaged and handicapped students entering the mainstream; to supplement vocational skills of those students already in a regular training…

  9. Transparency in nanophotonic quantum wires

    International Nuclear Information System (INIS)

    Singh, Mahi R

    2009-01-01

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  10. Health care's 100 most wired.

    Science.gov (United States)

    Solovy, A; Serb, C

    1999-02-01

    They're wired all right, and America's 100 most techno-savvy hospitals and health systems share one more thing: a commitment to using technology to link with employees, patients, suppliers, and insurers. "We want to be a health care travel agency for our community," says one chief information officer. "And we see Internet technology as a key."

  11. Correlated electron phenomena in ultra-low disorder quantum wires

    International Nuclear Information System (INIS)

    Reilly, D.J.; Facer, G.R.; Dzurak, A.S.; Kane, B.E.; Clark, R.G.; Lumpkin, N.E.

    1999-01-01

    Full text: Quantum point contacts in the lowest disorder HEMTs display structure at 0.7 x 2e 2 /h, which cannot be interpreted within a single particle Landauer model. This structure has been attributed to a spontaneous spin polarisation at zero B field. We have developed novel GaAs/AlGaAs enhancement mode FETs, which avoid the random impurity potential present in conventional MODFET devices by using epitaxially grown gates to produce ultra-low-disorder QPCs and quantum wires using electron beam lithography. The ballistic mean free path within these devices exceeds 160 μm 2 . Quantum wires of 5 μm in length show up to 15 conductance plateaux, indicating that these may be the lowest-disorder quantum wires fabricated using conventional surface patterning techniques. These structures are ideal for the study of correlation effects in QPCs and quantum wires as a function of electron density. Our data provides strong evidence that correlation effects are enhanced as the length of the 1D region is increased and also that additional structure moves close to 0.5 x 2e 2 /h, the value expected for an ideal spin-split 1D level

  12. FPGA based fast synchronous serial multi-wire links synchronization

    Science.gov (United States)

    Pozniak, Krzysztof T.

    2013-10-01

    The paper debates synchronization method of multi-wire, serial link of constant latency, by means of pseudo-random numbers generators. The solution was designed for various families of FPGA circuits. There were debated synchronization algorithm and functional structure of parameterized transmitter and receiver modules. The modules were realized in VHDL language in a behavioral form.

  13. Computation of radiation from wire antennas on conducting bodies

    DEFF Research Database (Denmark)

    Albertsen, N. Christian; Hansen, Jesper; Jensen, Niels E.

    1974-01-01

    A theoretical formulation, in terms of combined magnetic and electric field integral equations, is presented for the class of electromagnetic problems in which one or more wire antennas are connected to a conducting body of arbitrary shape. The formulation is suitable for numerical computation...... provided that the overall dimensions of the structure are not large compared to the wavelength. A computer program is described, and test runs on various configurations involving a cylindrical body with one or more straight wires are presented. The results obtained agree well with experimental data....

  14. Raman study of InAs/InP quantum wires

    Science.gov (United States)

    Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

    2007-04-01

    We present a Raman study of the vibrational modes in InAs/InP (001) quantum wires. The energy of the observed phonon modes evidences the confinement properties of the wires, their strain anisotropy and the effect of atomic intermixing. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the E1 critical point. The observed vibrations and their variation with sample characteristics are in agreement with the conclusions of previous structural and optical characterization performed in the same samples.

  15. Multi-anode wire straw tube tracker

    International Nuclear Information System (INIS)

    Oh, S.H.; Ebenstein, W.L.; Wang, C.W.

    2011-01-01

    We report on a test of a straw tube detector design having several anode (sense) wires inside a straw tube. The anode wires form a circle inside the tube and are read out independently. This design could solve several shortcomings of the traditional single wire straw tube design such as double hit capability and stereo configuration.

  16. On the preparation of superconducting wires

    International Nuclear Information System (INIS)

    Topare, R.J.; Chinchure, A.D.; Shah, S.S.; Hadole, G.B.

    1993-01-01

    The different methods of preparation of superconducting wires have been discussed. The powder-in-tube technique is followed for the preparation of YBCO and BISCCO superconducting wires. The results are discussed. The present status of the industries in preparing the superconducting wires having the maximum J c values is discussed. (author). 30 refs., 6 figs., 2 tabs

  17. Pre-wired systems prove their worth.

    Science.gov (United States)

    2012-03-01

    The 'new generation' of modular wiring systems from Apex Wiring Solutions have been specified for two of the world's foremost teaching hospitals - the Royal London and St Bartholomew's Hospital, as part of a pounds sterling 1 billion redevelopment project, to cut electrical installation times, reduce on-site waste, and provide a pre-wired, factory-tested, power and lighting system. HEJ reports.

  18. 75 FR 4584 - Wire Decking From China

    Science.gov (United States)

    2010-01-28

    ... COMMISSION Wire Decking From China AGENCY: United States International Trade Commission. ACTION: Scheduling... retarded, by reason of subsidized and less-than-fair-value imports from China of wire decking, provided for..., producers, or exporters in China of wire decking, and that such ] products are being sold in the United...

  19. High sensitivity Hall devices with AlSb/InAs quantum well structures

    International Nuclear Information System (INIS)

    Zhang Yang; Zhang Yu-Wei; Wang Cheng-Yan; Guan Min; Cui Li-Jie; Li Yi-Yang; Wang Bao-Qiang; Zhu Zhan-Ping; Zeng Yi-Ping

    2013-01-01

    AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm 2 · V −1 · s −1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Thermite welding of Cu-Nb microcomposite wires

    Energy Technology Data Exchange (ETDEWEB)

    Visniakov, Nikolaj; Mikalauskas, Gediminas; Lukauskaite, Raimonda; Cernasejus, Olegas; Rudzinskas, Vitalijus [Vilnius Gediminas Technical Univ. (Lithuania). Faculty of Mechanics; Skamat, Jelena; Boris, Renata [Vilnius Gediminas Technical Univ. (Lithuania). Inst. of Thermal Insulation

    2017-10-15

    Thermite welding of Cu-Nb microcomposite wires was investigated. Suitable compositions of thermite material and slag were determined from the equation of the exothermic combustion synthesis reaction. The phase compositions of the thermite mixture and slag determined by X-ray diffraction analysis correspond to those assessed from the equation. According to non-destructive radiographic testing, the joint structure does not have welding defects. Microstructural examination of the joint cross-section with scanning electron microscopy showed that the Cu-Nb wire retained its shape and microstructure and only a thin surface layer of wire was melted during welding. The difference in electrical resistances of the conductor and welded joint was below 20 %. The thermite joint can withstand a maximum load equal to 62.5 % of the load-bearing capacity of microcomposite conductor.

  1. Operativni i vizuelni nedostatci mašina i opreme za aplikaciju pesticida u svetinikolskoj opštini

    OpenAIRE

    Dimitrovski, Zoran; Dimitrov, Sasko; Mihajlov, Vanco

    2016-01-01

    Direktiva 2009/128 / EC Evropskog parlamenta uspostavlja okvir za sprovođenje Nacionalnog akcionog plana u svakoj zemlji, koji se odnosi na održivo korišćenje pesticida. Jedna od oblasti koje su obuhvaćene Direktivom se direktno odnosi na uvođenje obaveznog praćenja i nadzora mašina za primenu pesticida. U Republici Makedonij se ne sprovodi inspekcija ovih mašina, a s druge strane, kao zemlja kandidat Makedonija je obavezna da uskladi svoje propise sa evropskim. Glavni ci...

  2. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  3. Wiring Economy of Pyramidal Cells in the Juvenile Rat Somatosensory Cortex.

    Science.gov (United States)

    Anton-Sanchez, Laura; Bielza, Concha; Larrañaga, Pedro; DeFelipe, Javier

    2016-01-01

    Ever since Cajal hypothesized that the structure of neurons is designed in such a way as to save space, time and matter, numerous researchers have analyzed wiring properties at different scales of brain organization. Here we test the hypothesis that individual pyramidal cells, the most abundant type of neuron in the cerebral cortex, optimize brain connectivity in terms of wiring length. In this study, we analyze the neuronal wiring of complete basal arborizations of pyramidal neurons in layer II, III, IV, Va, Vb and VI of the hindlimb somatosensory cortical region of postnatal day 14 rats. For each cell, we search for the optimal basal arborization and compare its length with the length of the real dendritic structure. Here the optimal arborization is defined as the arborization that has the shortest total wiring length provided that all neuron bifurcations are respected and the extent of the dendritic arborizations remain unchanged. We use graph theory and evolutionary computation techniques to search for the minimal wiring arborizations. Despite morphological differences between pyramidal neurons located in different cortical layers, we found that the neuronal wiring is near-optimal in all cases (the biggest difference between the shortest synthetic wiring found for a dendritic arborization and the length of its real wiring was less than 5%). We found, however, that the real neuronal wiring was significantly closer to the best solution found in layers II, III and IV. Our studies show that the wiring economy of cortical neurons is related not to the type of neurons or their morphological complexities but to general wiring economy principles.

  4. Clinical bending of nickel titanium wires

    Directory of Open Access Journals (Sweden)

    Stephen Chain

    2015-01-01

    Full Text Available Since the evolution and the involvement of Nickel Titanium wires in the field of Orthodontics. The treatment plan has evolved with the use of low force Nickel Titanium wires. Because of their high springback, low stiffness, they are the key initial wires in leveling and alignment but have poor formability. Since poor formability limits its ability to create variable arch forms thus; limits the form of treatment. We have devised a method to bend the Nickel Titanium wires to help in our inventory but also customized the wire according to the treatment.

  5. Emittance growth due to Tevatron flying wires

    Energy Technology Data Exchange (ETDEWEB)

    Syphers, M; Eddy, Nathan

    2004-06-01

    During Tevatron injection, Flying Wires have been used to measure the transverse beam size after each transfer from the Main Injector in order to deduce the transverse emittances of the proton and antiproton beams. This amounts to 36 + 9 = 45 flies of each of 3 wire systems, with an individual wire passing through each beam bunch twice during a single ''fly''. below they estimate the emittance growth induced by the interaction of the wires with the particles during these measurements. Changes of emittance from Flying Wire measurements conducted during three recent stores are compared with the estimations.

  6. Influence of nitrogen on the growth and the properties of InAs quantum dots; Einfluss von Stickstoff auf das Wachstum und die Eigenschaften von InAs-Quantenpunkten

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, O.

    2004-11-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  7. Dielectric GaAs Antenna Ensuring an Efficient Broadband Coupling between an InAs Quantum Dot and a Gaussian Optical Beam

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Malik, Nitin S.; Dupuy, Emmanuel

    2013-01-01

    We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the ex...

  8. Vibrating wire for beam profile scanning

    Directory of Open Access Journals (Sweden)

    S. G. Arutunian

    1999-12-01

    Full Text Available A method that measures the transverse profile (emittance of the bunch by detecting radiation arising at the scattering of the bunch on scanning wire is widely used. In this work information about bunch scattering is obtained by measuring the oscillation frequency of the tightened scanning wire. In such a way, the system of radiation (or secondary particles extraction and measurement can be removed. The entire unit consists of a compact fork with tightened wire and a scanning system. Normal oscillation frequency of a wire depends on wire tension, its geometric parameters, and, in a second approximation, its elastic characteristics. Normal oscillations are generated by interaction of an alternating current through the wire with magnetic field of a permanent magnet. In this case, it is suggested that the magnetic field of the accelerator (field of dipole magnets or quadrupole magnets be used for excitation of oscillations. The dependence of oscillation frequency on beam scattering is determined by several factors, including changes of wire tension caused by transverse force of the beam and influence of beam self-field. Preliminary calculations show that the influence of wire heating will dominate. We have studied strain gauges on the basis of vibrating wire from various materials (tungsten, beryl bronze, and niobium zirconium alloys. A scheme of normal oscillation generation by alternating current in autogeneration circuit with automatic frequency adjustment was selected. A special method of wire fixation and elimination of transverse degrees of freedom allows us to achieve relative stability better than 10^{-5} during several days at a relative resolution of 10^{-6}. Experimental results and estimates of wire heating of existing scanners show that the wire heats up to a few hundred grades, which is enough for measurements. The usage of wire of micrometer thickness diminishes the problem of wire thermalization speed during the scanning of the bunch.

  9. Modifications in straight wire treatment.

    Science.gov (United States)

    Cardona, Alvin

    2010-01-01

    Orthodontic treatments have been modified with each new generation of clinicians. Today the emphasis is on facial esthetics and healthy temporomandibular joints. With orthopedic treatment, we can develop dental arches to get the necessary space to align the teeth and we can reach adequate function and esthetics, all within relatively good stability. By combining two-phase treatment with low friction fixed orthodontics and super elastic wires we produce light but continuous forces and we can provide better treatment than before. These types of forces cause physiological and functional orthopedic orthodontic reactions. The purpose of this article is to demonstrate our fixed orthopedic and orthodontic approach called "Modified Straight Wire" or "Physiologic Arch Technique." This technique is very successful with our patients because it can exert slow and continuous forces with minimal patient cooperation.

  10. Sintered wire cesium dispenser photocathode

    Science.gov (United States)

    Montgomery, Eric J; Ives, R. Lawrence; Falce, Louis R

    2014-03-04

    A photoelectric cathode has a work function lowering material such as cesium placed into an enclosure which couples a thermal energy from a heater to the work function lowering material. The enclosure directs the work function lowering material in vapor form through a low diffusion layer, through a free space layer, and through a uniform porosity layer, one side of which also forms a photoelectric cathode surface. The low diffusion layer may be formed from sintered powdered metal, such as tungsten, and the uniform porosity layer may be formed from wires which are sintered together to form pores between the wires which are continuous from the a back surface to a front surface which is also the photoelectric surface.

  11. Slice of LHC dipole wiring

    CERN Multimedia

    Dipole model slice made in 1994 by Ansaldo. The high magnetic fields needed for guiding particles around the Large Hadron Collider (LHC) ring are created by passing 12’500 amps of current through coils of superconducting wiring. At very low temperatures, superconductors have no electrical resistance and therefore no power loss. The LHC is the largest superconducting installation ever built. The magnetic field must also be extremely uniform. This means the current flowing in the coils has to be very precisely controlled. Indeed, nowhere before has such precision been achieved at such high currents. 50’000 tonnes of steel sheets are used to make the magnet yokes that keep the wiring firmly in place. The yokes constitute approximately 80% of the accelerator's weight and, placed side by side, stretch over 20 km!

  12. Pin Wire Coating Trip Report

    International Nuclear Information System (INIS)

    Spellman, G P

    2004-01-01

    A meeting to discuss the current pin wire coating problems was held at the Reynolds plant in Los Angeles on 2MAR04. The attendance list for Reynolds personnel is attached. there was an initial presentation which gave a brief history and the current status of pin wire coating at Reynolds. There was a presentation by Lori Primus on the requirements and issues for the coating. There was a presentation by Jim Smith of LANL on the chemistry and to some extent process development done to date. There was a long session covering what steps should be taken in the short term and, to a lesser extent, the long term. The coating currently being used is a blend of two polymers, polyethersulfone and polyparabanic acid (PPA) and some TiO2 filler. This system was accepted and put into production when the pin wire coating was outsourced to another company in 1974. When that company no longer was interested, the wire coating was brought in-house to Reynolds. At that time polyparabanic acid was actually a commercial product available from Exxon under the trade name Tradlon. However, it appears that the material used at Reynolds was synthesized locally. Also, it appears that a single large batch was synthesized in that time period and used up to 1997 when the supply ran out. The reason for the inclusion of TiO2 is not known although it does act as a rheological thickener. However, a more controlled thickening can be obtained with materials such as fumed silica. This material would have less likelihood of causing point imperfections in the coatings. Also, the mixing technique being used for all stages of the process is a relatively low shear ball mill process and the author recommends a high shear process such as a three roll paint mill, at least for the final mixing. Since solvent is added to the powder at Reynolds, it may be that they need to have the paint mill there

  13. Flexible and weaveable capacitor wire based on a carbon nanocomposite fiber.

    Science.gov (United States)

    Ren, Jing; Bai, Wenyu; Guan, Guozhen; Zhang, Ye; Peng, Huisheng

    2013-11-06

    A flexible and weaveable electric double-layer capacitor wire is developed by twisting two aligned carbon nanotube/ordered mesoporous carbon composite fibers with remarkable mechanical and electronic properties as electrodes. This capacitor wire exhibits high specific capacitance and long life stability. Compared with the conventional planar structure, the capacitor wire is also lightweight and can be integrated into various textile structures that are particularly promising for portable and wearable electronic devices. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Wear of dragline wire ropes

    Energy Technology Data Exchange (ETDEWEB)

    Dayawansa, D.; Kuruppu, M.; Mashiri, F.; Bartosiewicz, H. [Monash University (Caulfield Campus), Caulfield East, Vic. (Australia). Department of Mechanical Engineering,

    2005-07-01

    Wire ropes are one of the most heavily used components in a dragline. Hoist ropes are subjected to fatigue due to the cyclic nature of load handling as well as due to rope bending over the sheaves and the drum under load. This leads to wire breaks due to fatigue. Accumulation of a number of wire breaks close to each other can have a detrimental effect on the rope. Furthermore, to allow for the increasing demand for higher load capacity coupled with the inconvenience of having very large ropes, the factor of safety is often compromised, which increases the wear rate. Drag ropes are also subjected to heavy loads. More importantly, they are allowed to drag along the rough mine surface subjecting them to external physical abrasion. This makes the life of drag ropes one of the lowest among those used in a dragline. Suspension and IBS ropes are relatively uniformly loaded during their regular usage although they need to withstand dynamic load cycles as well as bending. Hence they tend to last for a number of years on average. The paper analyses the wear types and their severity of each of these rope applications, and suggests methods to determine rope wear rates and the resulting rope life. The paper further gives suggestions for good operating and maintenance practice that can extend the rope life and help reduce the large expenditure associated with every major rope change in a dragline. 6 refs., 8 figs., 1 tab.

  15. Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers.

    Science.gov (United States)

    Hu, Dongzhi; McPheeters, Claiborne Co; Yu, Edward T; Schaadt, Daniel M

    2011-01-12

    A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density. A set of four samples were compared: InAs QDs without in situ annealing with and without AlAs cap layer and InAs QDs in situ annealed with and without AlAs cap layer. Atomic force microscopy measurements show that when in situ annealing of QDs without AlAs capping layers is investigated, holes and dashes are present on the device surface, while capping with one monolayer AlAs improves the device surface. On unannealed samples, capping the QDs with one monolayer of AlAs improves the spectral response, the open-circuit voltage and the fill factor. On annealed samples, capping has little effect on the spectral response but reduces the short-circuit current, while increasing the open-circuit voltage, the fill factor and power conversion efficiency.

  16. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    NARCIS (Netherlands)

    Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

  17. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    Bull, D.J.

    1977-01-01

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

  18. Calcium homeostasis in photoreceptor cells of Drosophila mutants inaC and trp studied with the pupil mechanism

    NARCIS (Netherlands)

    Hofstee, CA; Stavenga, DG

    1996-01-01

    The light-driven pupil mechanism, consisting of an assembly of mobile pigment granules inside the photoreceptor cells, has been investigated by in vivo reflection microspectrophotometry in wild type (WT) Drosophila and in the photoreceptor mutants inaC and trp. The pupillary response of a

  19. Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

    DEFF Research Database (Denmark)

    Saldaña, J. C. Estrada; Žitko, R.; Cleuziou, J. P.

    2018-01-01

    We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe...

  20. Neutron diffraction determination of mean-square atomic displacements in InAs and GaSb

    International Nuclear Information System (INIS)

    Tibballs, J.E.; Feteris, S.M.; Barnea, Z.

    1981-01-01

    Integrated intensities for Bragg reflection of neutrons from single crystals of the III-V compounds InAs and GaSb have been measured at room temperature. The data were collected at two wave-lengths, 0.947 and 1.241 A, in order to establish the adequacy of a correction for moderate to severe anisotropic extinction. Data were also obtained for InAs at four temperatures from 408 to 933 K. Corrections for thermal diffuse scattering were applied. The results were analysed in the one-particle potential perturbation approximation with terms to fourth order in the atomic displacements u(u 1 , u 2 , u 3 ). At 296 K, the mean-square components usub(s) 2 determined were: In, 0.0116(2) A 2 ; As, 0.0102(1) A 2 ; and Ga, 0.0120(3)A 2 ; Sb, 0.0107(3)A 2 . The third-order coefficients for InAs are comparable with those for Si and Ge, while those for GaSb are comparable with those for zinc chalcogenides. Below 400 K, the mean-square displacements in InAs decrease faster than predicted by the present perturbation approach

  1. Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces.

    Science.gov (United States)

    Corfdir, Pierre; Li, Hong; Marquardt, Oliver; Gao, Guanhui; Molas, Maciej R; Zettler, Johannes K; van Treeck, David; Flissikowski, Timur; Potemski, Marek; Draxl, Claudia; Trampert, Achim; Fernández-Garrido, Sergio; Grahn, Holger T; Brandt, Oliver

    2018-01-10

    In semiconductor quantum-wire heterostructures, interface roughness leads to exciton localization and to a radiative decay rate much smaller than that expected for structures with flat interfaces. Here, we uncover the electronic and optical properties of the one-dimensional extended defects that form at the intersection between stacking faults and inversion domain boundaries in GaN nanowires. We show that they act as crystal-phase quantum wires, a novel one-dimensional quantum system with atomically flat interfaces. These quantum wires efficiently capture excitons whose radiative decay gives rise to an optical doublet at 3.36 eV at 4.2 K. The binding energy of excitons confined in crystal-phase quantum wires is measured to be more than twice larger than that of the bulk. As a result of their unprecedented interface quality, these crystal-phase quantum wires constitute a model system for the study of one-dimensional excitons.

  2. Imperfection analysis of flexible pipe armor wires in compression and bending

    DEFF Research Database (Denmark)

    Østergaard, Niels Højen; Lyckegaard, Anders; Andreasen, Jens H.

    2012-01-01

    The work presented in this paper is motivated by a specific failure mode known as lateral wire buckling occurring in the tensile armor layers of flexible pipes. The tensile armor is usually constituted by two layers of initially helically wound steel wires with opposite lay directions. During pipe...... laying in ultra deep waters, a flexible pipe experiences repeated bending cycles and longitudinal compression. These loading conditions are known to impose a danger to the structural integrity of the armoring layers, if the compressive load on the pipe exceeds the total maximum compressive load carrying...... ability of the wires. This may cause the wires to buckle in the circumferential pipe direction, when these are restrained against radial deformations by adjacent layers. In the present paper, a single armoring wire modeled as a long and slender curved beam embedded in a frictionless cylinder bent...

  3. The effect of different annealing treatments on magneto-impedance in Finemet wires

    International Nuclear Information System (INIS)

    Hernando, B.; Olivera, J.; Alvarez, P.; Santos, J.D.; Sanchez, M.L.; Perez, M.J.; Sanchez, T.; Gorria, P.

    2006-01-01

    In this paper, we analyze the behaviour of Fe-rich wires that have been submitted to a current annealing, with and without an applied torsional stress. The structural relaxation and induced anisotropies achieved in the samples produce different effects in the magneto-impedance and torsion impedance response, in comparison with the as-quenched wire, due to the different domain structure and magnetization processes involved

  4. Influences of Corrosive Sulfur on Copper Wires and Oil-Paper Insulation in Transformers

    Directory of Open Access Journals (Sweden)

    Jian Li

    2011-10-01

    Full Text Available Oil-impregnated paper is widely used in power transmission equipment as a reliable insulation. However, copper sulphide deposition on oil-paper insulation can lead to insulation failures in power transformers. This paper presents the influences of copper sulfur corrosion and copper sulphide deposition on copper wires and oil-paper insulation in power transformers. Thermal aging tests of paper-wrapped copper wires and bare copper wires in insulating oil were carried out at 130 °C and 150 °C in laboratory. The corrosive characteristics of paper-wrapped copper wires and bare copper wires were analyzed. Dielectric properties of insulation paper and insulating oil were also analyzed at different stages of the thermal aging tests using a broadband dielectric spectrometer. Experiments and analysis results show that copper sulfide deposition on surfaces of copper wires and insulation paper changes the surface structures of copper wires and insulation paper. Copper sulfur corrosion changes the dielectric properties of oil-paper insulation, and the copper sulfide deposition greatly reduces the electrical breakdown strength of oil-paper insulation. Metal passivator is capable of preventing copper wires from sulfur corrosion. The experimental results are helpful for investigations for fault diagnosis of internal insulation in power transformers.

  5. Reversible flexible structural changes in multidimensional MOFs by guest molecules (I{sub 2}, NH{sub 3}) and thermal stimulation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yang; Li, Libo; Yang, Jiangfeng; Wang, Shuang; Li, Jinping, E-mail: Jpli211@hotmail.com

    2015-03-15

    Three metal–organic frameworks (MOFs), [Cu(INA){sub 2}], [Cu(INA){sub 2}I{sub 2}] and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}], were synthesized with 3D, 2D, and 0D structures, respectively. Reversible flexible structural changes of these MOFs were reported. Through high temperature (60–100 °C) stimulation of I{sub 2} or ambient temperature stimulation of NH{sub 3}, [Cu(INA){sub 2}] (3D) converted to [Cu(INA){sub 2}I{sub 2}] (2D) and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}] (0D); as the temperature increased to 150 °C, the MOFs changed back to their original form. In this way, this 3D MOF has potential application in the capture of I{sub 2} and NH{sub 3} from polluted water and air. XRD, TGA, SEM, NH{sub 3}-TPD, and the measurement of gas adsorption were used to describe the changes in processes regarding the structure, morphology, and properties. - Graphical abstract: Through I{sub 2}, NH{sub 3} molecules and thermal stimulation, the three MOFs can achieve reversible flexible structural changes. Different methods were used to prove the flexible reversible changes. - Highlights: • [Cu(INA){sub 2}] can flexible transform to [Cu(INA){sub 2}I{sub 2}] and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}] by adsorbing I{sub 2} or NH{sub 3}. • The reversible flexible transformation related to material source, temperature and concentration. • Potential applications for the capture of I{sub 2} and NH{sub 3} from polluted water or air.

  6. EDITORIAL More than a wire More than a wire

    Science.gov (United States)

    Demming, Anna

    2010-10-01

    Nanowires are the natural evolution of the connections in circuits when scaled down to nanometre sizes. On closer inspection, of course, the role of nanowires in developing new technologies is much more than just a current-bearing medium. By sizing the diameters of these objects down to the nanoscale, their properties become increasingly sensitive to factors such as the gas composition, temperature and incident light of their surrounding environment, as well as defects and variations in diameter. What becomes important in modern electronics innovations is not just what is connected, but how. Nanowires had already begun to attract the attention of researchers in the early 1990s as advances in imaging and measurement devices invited researchers to investigate the properties of these one-dimensional structures [1, 2]. This interest has sparked ingenious ways of fabricating nanowires such as the use of a DNA template. A collaboration of researchers at Louisiana Tech University in the US hs provided an overview of various methods to assemble conductive nanowires on a DNA template, including a summary of different approaches to stretching and positioning the templates [3]. Work in this area demonstrates a neat parallel for the role of DNA molecules as the building blocks of life and the foundations of nanoscale device architectures. Scientists at HP Labs in California are using nanowires to shrink the size of logic arrays [4]. One aspect of electronic interconnects that requires particular attention at nanoscale sizes is the effect of defects. The researchers at HP Labs demonstrate that their approach, which they name FPNI (field-programmable nanowire interconnect), is extremely tolerant of the high defect rates likely to be found in these nanoscale structures, and allows reduction in size and power without significantly sacrificing the clock rate. Another issue in scaling down electronics is the trend for an increasing resistivity with decreasing wire width. Researchers

  7. Drug-eluting Ti wires with titania nanotube arrays for bone fixation and reduced bone infection

    Science.gov (United States)

    Gulati, Karan; Aw, Moom Sinn; Losic, Dusan

    2011-10-01

    Current bone fixation technology which uses stainless steel wires known as Kirschner wires for fracture fixing often causes infection and reduced skeletal load resulting in implant failure. Creating new wires with drug-eluting properties to locally deliver drugs is an appealing approach to address some of these problems. This study presents the use of titanium [Ti] wires with titania nanotube [TNT] arrays formed with a drug delivery capability to design alternative bone fixation tools for orthopaedic applications. A titania layer with an array of nanotube structures was synthesised on the surface of a Ti wire by electrochemical anodisation and loaded with antibiotic (gentamicin) used as a model of bone anti-bacterial drug. Successful fabrication of TNT structures with pore diameters of approximately 170 nm and length of 70 μm is demonstrated for the first time in the form of wires. The drug release characteristics of TNT-Ti wires were evaluated, showing a two-phase release, with a burst release (37%) and a slow release with zero-order kinetics over 11 days. These results confirmed our system's ability to be applied as a drug-eluting tool for orthopaedic applications. The established biocompatibility of TNT structures, closer modulus of elasticity to natural bones and possible inclusion of desired drugs, proteins or growth factors make this system a promising alternative to replace conventional bone implants to prevent bone infection and to be used for targeted treatment of bone cancer, osteomyelitis and other orthopaedic diseases.

  8. Capping layer modulation of composition of GaAs/In0.15Ga0.75As/InXGa1-XAs/GaAs quantum wells and InAs QD's emission

    Science.gov (United States)

    Vega-Macotela, L. G.; Torchynska, T.; Polupan, G.; Muñiz-García, P. I.

    2018-02-01

    The GaAs/In0.15Ga0.85As/InxGa1-xAs /GaAs quantum wells (QWs) with the InAs quantum dots (QDs) have been studied by means of photoluminescence and high resolution X ray diffraction (HR-XRD) methods. The QW structures are characterized by the different compositions of capping InxGa1-xAs layers with the parameter x from the range 0.10-0.25. The InxGa1-xAs composition varying is accompanied by the change non-monotonously of the PL intensity and peak positions of InAs QD emission. HR-XRD results have been used for the control the QW compositions. Numerical simulations of HR-XRD results have shown that the composition of quantum layers vary none monotonously in studied QD structures as well. The physical reasons of the mentioned optical and structural effects and their dependence on capping layer compositions have been discussed.

  9. Plasma dynamics in aluminium wire array Z-pinch implosions

    International Nuclear Information System (INIS)

    Bland, S.N.

    2001-01-01

    The wire array Z-pinch is the world's most powerful laboratory X-ray source. An achieved power of ∼280TW has generated great interest in the use of these devices as a source of hohlraum heating for inertial confinement fusion experiments. However, the physics underlying how wire array Z-pinches implode is not well understood. This thesis presents the first detailed measurements of plasma dynamics in wire array experiments. The MAGPIE generator, with currents of up to 1.4MA, 150ns 10-90% rise-time, was used to implode arrays of 16mm diameter typically containing between 8 and 64 15μm aluminium wires. Diagnostics included: end and side-on laser probing with interferometry, schlieren and shadowgraphy channels; radial and axial streak photography; gated X-ray imaging; XUV and hard X-ray spectrometry; filtered XRDs and diamond PCDs; and a novel X-ray backlighting system to probe high density plasma. It was found that the plasma formed from the wires consisted of cold, dense cores, which ablated producing hot, low density coronal plasma. After an initial acceleration around the cores, coronal plasma streams flowed force-free towards the axis, with an instability wavelength determined by the core size. At ∼50% of the implosion time, the streams collided on axis forming a precursor plasma which appeared to be uniform, stable, and inertially confined. The existence of core-corona structure significantly affected implosion dynamics. For arrays with <64 wires, the wire cores remained in their original positions until ∼80% of the implosion time before accelerating rapidly. At 64 wires a transition in implosion trajectories to 0-D like occurred indicating a possible merger of current carrying plasma close to the cores - the cores themselves did not merge. During implosion, the cores initially developed uncorrelated instabilities that then transformed into a longer wavelength global mode of instability. The study of nested arrays (2 concentric arrays, one inside the other

  10. A Vibrating Wire System For Quadrupole Fiducialization

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, Zachary

    2010-12-13

    A vibrating wire system is being developed to fiducialize the quadrupoles between undulator segments in the LCLS. This note provides a detailed analysis of the system. The LCLS will have quadrupoles between the undulator segments to keep the electron beam focused. If the quadrupoles are not centered on the beam axis, the beam will receive transverse kicks, causing it to deviate from the undulator axis. Beam based alignment will be used to move the quadrupoles onto a straight line, but an initial, conventional alignment must place the quadrupole centers on a straight line to 100 {micro}m. In the fiducialization step of the initial alignment, the position of the center of the quadrupole is measured relative to tooling balls on the outside of the quadrupole. The alignment crews then use the tooling balls to place the magnet in the tunnel. The required error on the location of the quadrupole center relative to the tooling balls must be less than 25 {micro}m. In this note, we analyze a system under construction for the quadrupole fiducialization. The system uses the vibrating wire technique to position a wire onto the quadrupole magnetic axis. The wire position is then related to tooling balls using wire position detectors. The tooling balls on the wire position detectors are finally related to tooling balls on the quadrupole to perform the fiducialization. The total 25 {micro}m fiducialization error must be divided between these three steps. The wire must be positioned onto the quadrupole magnetic axis to within 10 {micro}m, the wire position must be measured relative to tooling balls on the wire position detectors to within 15 {micro}m, and tooling balls on the wire position detectors must be related to tooling balls on the quadrupole to within 10 {micro}m. The techniques used in these three steps will be discussed. The note begins by discussing various quadrupole fiducialization techniques used in the past and discusses why the vibrating wire technique is our method

  11. Tehničke mere za smanjenje broja nesreća sa učešćem poljoprivrednih mašina

    OpenAIRE

    Gligorevic, Kosta; Oljaca, Mico; Radojcic, Dušan; Dimitrovski, Zoran

    2016-01-01

    Istraživanja pokazuju da su nesreće sa mobilnom poljoprivrednom mehanizacijom u Republici Srbiji veoma česta pojava. Osnovni problemi su: nedostatak obuke za pravilno korišćenje i održavanje mašina, nedovoljno poznavanje saobraćajnih propisa vozača traktora, neodgovornost i nedisciplina prilikom korišćenja traktora i poljoprivredih mašina. U radu su predstavljene tehničke mere kojima se broj nesreća može smanjiti, uz veće poštovanje zakona iz oblasti sigurnosti rada mašina, ...

  12. Electro-mechanics of drift tube wires

    International Nuclear Information System (INIS)

    Milburn, R.H.

    1997-01-01

    The position and stability of the sense wires in very long drift tubes are affected by both gravitational and electrostatic forces, as well as by the wire tension. For a tube to be used as an element of a high-resolution detector all these forces and their effects must be understood in appropriately precise detail. In addition, the quality control procedures applied during manufacture and detector installation must be adequate to ensure that the internal wire positions remain within tolerances. It may be instructive to practitioners to review the simple theory of a taut wire in the presence of anisotropic gravitational and electrostatic fields to illustrate the conditions for stability, the equilibrium wire displacement from straightness, and the effect of the fields on the mechanical vibration frequencies. These last may be used to monitor the wire configuration externally. A number of practical formulae result and these are applied to illustrative examples. (orig.)

  13. Phosphorus in antique iron music wire.

    Science.gov (United States)

    Goodway, M

    1987-05-22

    Harpsichords and other wire-strung musical instruments were made with longer strings about the beginning of the 17th century. This change required stronger music wire. Although these changes coincided with the introduction of the first mass-produced steel (iron alloyed with carbon), carbon was not found in samples of antique iron harpsichord wire. The wire contained an amount of phosphorus sufficient to have impeded its conversion to steel, and may have been drawn from iron rejected for this purpose. The method used to select pig iron for wire drawing ensured the highest possible phosphorus content at a time when its presence in iron was unsuspected. Phosphorus as an alloying element has had the reputation for making steel brittle when worked cold. Nevertheless, in replicating the antique wire, it was found that lowcarbon iron that contained 0.16 percent phosphorus was easily drawn to appropriate gauges and strengths for restringing antique harpsichords.

  14. Isolation, Fractionation and Characterization of Catalase from Neurospora crassa (InaCC F226)

    Science.gov (United States)

    Suryani; Ambarsari, L.; Lindawati, E.

    2017-03-01

    Catalase from Indigenous isolate Neurospora crassa InaCC F226 has been isolated, fractionated and characterized. Production of catalase by Neurospora crassa was done by using PDA medium (Potato Dextrosa Agar) and fractionated with ammonium sulphate with 20-80% saturation. Fraction 60% was optimum saturation of ammonium sulphate and had highest specific activity 3339.82 U/mg with purity 6.09 times, total protein 0.920 mg and yield 88.57%. The optimum pH and temperature for catalase activity were at 40°C and pH 7.0, respectively. The metal ions that stimulated catalase activity acted were Ca2+, Mn2+ and Zn2+, and inhibitors were EDTA, Mg2+ and Cu2+. Based on Km and Vmax values were 0.2384 mM and 13.3156 s/mM.

  15. Tunable emission from InAs quantum dots gated with graphene

    Science.gov (United States)

    Kinnischtzke, Laura; Goodfellow, Kenneth; Chakraborty, Chitraleema; Lai, Yiming; Badolato, Antonio; Vamivakas, Nick

    We demonstrate Stark shifted photo-luminescence from InAs quantum dots (QD) using an n-i-Schottky diode where graphene has been used as the Schottky barrier material. This hybrid photonic device is motivated by the need for tunable single photon sources with high flux and storage capabilities. Photonic crystal nanocavities decorated with a single QD provide a rich environment for coupling spins and photons, in addition to accessing cavity quantum electrodynamic physics. Methods currently used for electrically tuning the QD inside the cavity suffer from a loss of the cavity quality factor, or high leakage currents in the diode which impacts the spin-photon coupling of the device. Our measurements are a first step towards using a graphene flake to electrically tune the emission of a strongly coupled QD-cavity system. NSF Grant No. DMR-1309734.

  16. Size and shape dependent optical properties of InAs quantum dots

    Science.gov (United States)

    Imran, Ali; Jiang, Jianliang; Eric, Deborah; Yousaf, Muhammad

    2018-01-01

    In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.

  17. Radiofrequency Wire Recanalization of Chronically Thrombosed TIPS

    Energy Technology Data Exchange (ETDEWEB)

    Majdalany, Bill S., E-mail: bmajdala@med.umich.edu [University of Michigan Health System, Division of Interventional Radiology, Department of Radiology (United States); Elliott, Eric D., E-mail: eric.elliott@osumc.edu [The Ohio State University Wexner Medical Center, Division of Interventional Radiology, Department of Radiology (United States); Michaels, Anthony J., E-mail: Anthony.michaels@osumc.edu; Hanje, A. James, E-mail: James.Hanje@osumc.edu [The Ohio State University Wexner Medical Center, Division of Gastroenterology and Hepatology, Department of Medicine (United States); Saad, Wael E. A., E-mail: wsaad@med.umich.edu [University of Michigan Health System, Division of Interventional Radiology, Department of Radiology (United States)

    2016-07-15

    Radiofrequency (RF) guide wires have been applied to cardiac interventions, recanalization of central venous thromboses, and to cross biliary occlusions. Herein, the use of a RF wire technique to revise chronically occluded transjugular intrahepatic portosystemic shunts (TIPS) is described. In both cases, conventional TIPS revision techniques failed to revise the chronically thrombosed TIPS. RF wire recanalization was successfully performed through each of the chronically thrombosed TIPS, demonstrating initial safety and feasibility in this application.

  18. IEE wiring regulations explained and illustrated

    CERN Document Server

    Scaddan, Brian

    2013-01-01

    The IEE Wiring Regulations Explained and Illustrated, Second Edition discusses the recommendations of the IEE Regulations for the Electrical Equipment of Buildings for the safe selection or erection of wiring installations. The book emphasizes earthing, bonding, protection, and circuit design of electrical wirings. The text reviews the fundamental requirements for safety, earthing systems, the earth fault loop impedance, and supplementary bonding. The book also describes the different types of protection, such as protection against mechanical damage, overcurrent, under voltage (which prevents

  19. Minimisation of the wire position uncertainties of the new CERN vacuum wire scanner

    CERN Document Server

    AUTHOR|(CDS)2069346; Barjau Condomines, A

    In the next years the luminosity of the LHC will be significantly increased. This will require a much higher accuracy of beam profile measurement than actually achievable by the current wire scanner. The new fast wire scanner is foreseen to measure small emittance beams throughout the LHC injector chain, which demands a wire travelling speed up to 20 ms-1 and position measurement accuracy of the order of a few microns. The vibrations of the mechanical parts of the system, and particularly the vibrations of the thin carbon wire, were identified as the major error sources of wire position uncertainty. Therefore the understanding of the wire vibrations is a high priority for the design and operation of the new device. This document presents the work performed to understand the main causes of the wire vibrations observed in one of the existing wire scanner and the new proposed design.

  20. Aircraft Wiring Support Equipment Integration Laboratory (AWSEIL)

    Data.gov (United States)

    Federal Laboratory Consortium — Purpose:The Aircraft Wiring Support Equipment Integration Laboratory (AWSEIL) provides a variety of research, design engineering and prototype fabrication services...

  1. submitter Dynamical Models of a Wire Scanner

    CERN Document Server

    Barjau, Ana; Dehning, Bernd

    2016-01-01

    The accuracy of the beam profile measurements achievable by the current wire scanners at CERN is limited by the vibrations of their mechanical parts. In particular, the vibrations of the carbon wire represent the major source of wire position uncertainty which limits the beam profile measurement accuracy. In the coming years, due to the Large Hadron Collider (LHC) luminosity upgrade, a wire traveling speed up to 20 $m s^{−1}$ and a position measurement accuracy of the order of 1 μm will be required. A new wire scanner design based on the understanding of the wire vibration origin is therefore needed. We present the models developed to understand the main causes of the wire vibrations observed in an existing wire scanner. The development and tuning of those models are based on measurements and tests performed on that CERN proton synchrotron (PS) scanner. The final model for the (wire + fork) system has six degrees-of-freedom (DOF). The wire equations contain three different excitation terms: inertia...

  2. Positioning and joining of organic single-crystalline wires

    Science.gov (United States)

    Wu, Yuchen; Feng, Jiangang; Jiang, Xiangyu; Zhang, Zhen; Wang, Xuedong; Su, Bin; Jiang, Lei

    2015-01-01

    Organic single-crystal, one-dimensional materials can effectively carry charges and/or excitons due to their highly ordered molecule packing, minimized defects and eliminated grain boundaries. Controlling the alignment/position of organic single-crystal one-dimensional architectures would allow on-demand photon/electron transport, which is a prerequisite in waveguides and other optoelectronic applications. Here we report a guided physical vapour transport technique to control the growth, alignment and positioning of organic single-crystal wires with the guidance of pillar-structured substrates. Submicrometre-wide, hundreds of micrometres long, highly aligned, organic single-crystal wire arrays are generated. Furthermore, these organic single-crystal wires can be joined within controlled angles by varying the pillar geometries. Owing to the controllable growth of organic single-crystal one-dimensional architectures, we can present proof-of-principle demonstrations utilizing joined wires to allow optical waveguide through small radii of curvature (internal angles of ~90–120°). Our methodology may open a route to control the growth of organic single-crystal one-dimensional materials with potential applications in optoelectronics. PMID:25814032

  3. Fatigue life prediction method for contact wire using maximum local stress

    International Nuclear Information System (INIS)

    Kim, Yong Seok; Haochuang, Li; Seok, Chang Sung; Koo, Jae Mean; Lee, Ki Won; Kwon, Sam Young; Cho, Yong Hyeon

    2015-01-01

    Railway contact wires supplying electricity to trains are exposed to repeated mechanical strain and stress caused by their own weight and discontinuous contact with a pantograph during train operation. Since the speed of railway transportation has increased continuously, railway industries have recently reported a number of contact wire failures caused by mechanical fatigue fractures instead of normal wear, which has been a more common failure mechanism. To secure the safety and durability of contact wires in environments with increased train speeds, a bending fatigue test on contact wire has been performed. The test equipment is too complicated to evaluate the fatigue characteristics of contact wire. Thus, the axial tension fatigue test was performed for a standard specimen, and the bending fatigue life for the contact wire structure was then predicted using the maximum local stress occurring at the top of the contact wire. Lastly, the tested bending fatigue life of the structure was compared with the fatigue life predicted by the axial tension fatigue test for verification.

  4. Fatigue life prediction method for contact wire using maximum local stress

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Seok; Haochuang, Li; Seok, Chang Sung; Koo, Jae Mean [Sungkyunkwan University, Suwon (Korea, Republic of); Lee, Ki Won; Kwon, Sam Young; Cho, Yong Hyeon [Korea Railroad Research Institute, Uiwang (Korea, Republic of)

    2015-01-15

    Railway contact wires supplying electricity to trains are exposed to repeated mechanical strain and stress caused by their own weight and discontinuous contact with a pantograph during train operation. Since the speed of railway transportation has increased continuously, railway industries have recently reported a number of contact wire failures caused by mechanical fatigue fractures instead of normal wear, which has been a more common failure mechanism. To secure the safety and durability of contact wires in environments with increased train speeds, a bending fatigue test on contact wire has been performed. The test equipment is too complicated to evaluate the fatigue characteristics of contact wire. Thus, the axial tension fatigue test was performed for a standard specimen, and the bending fatigue life for the contact wire structure was then predicted using the maximum local stress occurring at the top of the contact wire. Lastly, the tested bending fatigue life of the structure was compared with the fatigue life predicted by the axial tension fatigue test for verification.

  5. FE modeling of Cu wire bond process and reliability

    NARCIS (Netherlands)

    Yuan, C.A.; Weltevreden, E.R.; Akker, P. van den; Kregting, R.; Vreugd, J. de; Zhang, G.Q.

    2011-01-01

    Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond

  6. 47 CFR 76.804 - Disposition of home run wiring.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 4 2010-10-01 2010-10-01 false Disposition of home run wiring. 76.804 Section... MULTICHANNEL VIDEO AND CABLE TELEVISION SERVICE Cable Inside Wiring § 76.804 Disposition of home run wiring. (a) Building-by-building disposition of home run wiring. (1) Where an MVPD owns the home run wiring in an MDU...

  7. Electrical, Optical and Structural Studies of INAS/INGASB VLWIR Superlattices

    Science.gov (United States)

    2013-01-01

    which is in agreement with theoretical calculations of based on published values of elastic constants. The InGaSb-on-InAs and InAs-on-InGaSb interfaces...Probing the interface fluctuations in semiconductor superlattices using a magneto -transport technique,” Superlattices Microstructructures 5, 225-228

  8. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    DEFF Research Database (Denmark)

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

    2011-01-01

    The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende,...... parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell....

  9. Intra-wire resistance and AC loss in multi-filamentary MgB2 wires

    NARCIS (Netherlands)

    Zhou, Chao; Offringa, Wietse; Bergen, Anne-Henriette; Wessel, Wilhelm A.J.; Krooshoop, Hendrikus J.G.; Dhalle, Marc M.J.; Sumption, M.D.; Collings, E.W.; Rindfleisch, M.; Tomsic, M.; ten Kate, Herman H.J.; Nijhuis, Arend

    2013-01-01

    Intra-wire resistance and AC loss of various multi-filamentary MgB2 wires with filaments surrounded by Nb barriers have been measured and analyzed. The intra-wire resistance is measured with a direct four-probe voltage–current method at various temperatures. The AC loss is acquired by both vibrating

  10. THERMO-MECHANICALLY PROCESSED ROLLED WIRE FOR HIGH-STRENGTH ON-BOARD WIRE

    Directory of Open Access Journals (Sweden)

    V. A. Lutsenko

    2011-01-01

    Full Text Available It is shown that at twisting of wire of diameter 1,83 mm, produced by direct wire drawing of thermomechanically processed rolled wire of diameter 5,5 mm of steel 90, metal stratification is completely eliminated at decrease of carbon, manganese and an additional alloying of chrome.

  11. Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling.

    Science.gov (United States)

    Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo

    2015-07-01

    We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

  12. Two-layer synchronized ternary quantum-dot cellular automata wire crossings

    Science.gov (United States)

    2012-01-01

    Quantum-dot cellular automata are an interesting nanoscale computing paradigm. The introduction of the ternary quantum-dot cell enabled ternary computing, and with the recent development of a ternary functionally complete set of elementary logic primitives and the ternary memorizing cell design of complex processing structures is becoming feasible. The specific nature of the ternary quantum-dot cell makes wire crossings one of the most problematic areas of ternary quantum-dot cellular automata circuit design. We hereby present a two-layer wire crossing that uses a specific clocking scheme, which ensures the crossed wires have the same effective delay. PMID:22507371

  13. Modelling of coil-loaded wire antenna using composite multiple domain basis functions

    CSIR Research Space (South Africa)

    Lysko, AA

    2010-03-01

    Full Text Available –ciency in modeling of the above-mentioned types of geometrical structures with a traditional method of moments (MoM). The reduction in the number of variables is accomplished by a logical aggregation/grouping of the individual straight wire segments... of the antenna is shown in Figure 1. The drawing shows the two straight wire segments joined by a helical coil. Both straight segments as well as the coil are modeled by straight thin wire sub-segments. The monopole is fed with a 1-Volt delta gap generator...

  14. InP/InAlAs/InGaAs-quantum wires

    Energy Technology Data Exchange (ETDEWEB)

    Kappelt, M.; Tuerck, V.; Grundmann, M.; Bimberg, D. [Technische Univ., Berlin (Germany); Cerva, H. [Siemens AG, Muenchen (Germany)

    1996-12-31

    Single InGaAs quantum wires and stacked InGaAs quantum wires with InAlAs barriers have been fabricated on v-grooved InP substrates by low pressure metal-organic chemical vapor deposition. The authors have found growth conditions where the InAlAs barrier exhibits a resharpening effect, similar to that of AlgaAs utilized for growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven.

  15. [Satisfaction with perinatal care in Vysočina region in the period between October 2013 and September 2014].

    Science.gov (United States)

    Takács, L; Seidlerová, J Mlíková; Smolík, F; Hoskovcová, S; Antonín, P; Vařáková, J; Valová, A; Svoboda, T; Dočkalová, J

    2015-12-01

    To assess women's satisfaction with perinatal care provided in maternity hospitals in Vysočina region, to identify the areas with high satisfaction scores as well as those requiring improvement, and to describe the factors influencing women's satisfaction, i. e. dissatisfaction with the care provided during labor and birth and the early postpartal period. Original study. Department of Psychology, Faculty of Philo-sophy, Charles University, Prague. The satisfaction survey was conducted in all maternity hospitals in Vysočina region (Jihlava, Havlíčkův Brod, Třebíč, Pelhřimov, Nové město na Moravě) during the period between October 2013 and September 2014. All women who had given birth in those hospitals during the period were approached and asked to participate in this survey. The women evaluated the perinatal care not before 58 days after birth, so that the evaluation of perinatal care did not take place directly during their stay at maternity hospital. In total, 1366 women took part in the study. The original Czech questionnaire KLI-P was used for the data collection. The KLI-P measures psychosocial climate of maternity hospitals on the following six scales: helpfulness and empathy of caregivers; control and involvement in decision-making; communication of information and availability of caregivers; dismissive attitude and lack of interest; physical comfort and services. The satisfaction rates with component dimensions of intrapartal and postpartal care at the maternity hospitals in Vysočina region were compared to the satisfaction rates for the Czech Republic as a whole as obtained in our previous study. We used the Kruskal-Wallis test for this comparison. The ordinal logistical regression (cumulative logit model) was used to identify predictors of women's satisfaction with intrapartum and postpartum care in Vysočina region. The women who delivered at maternity hospitals in Vysočina region were significantly more satisfied with all dimensions of

  16. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  17. A Brief History of INA and ICOH SCNP: International Neurotoxicology Association and International Congress on Occupational Health Scientific Committee on Neurotoxicology and Psychophysiology

    Science.gov (United States)

    Two international scientific societies dedicated to research in neurotoxicology and neurobehavioral toxicology are the International Neurotoxicology Association (INA) and the International Congress on Occupational Health International Symposium on Neurobehavioral Methods and Effe...

  18. Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Sanchez, J; Alonso-Gonzalez, P; Herranz, J; Gonzalez, Y; Gonzalez, L [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760-Tres Cantos, Madrid (Spain)

    2009-03-25

    In this work, we present a fabrication process that combines atomic force microscopy (AFM) local oxidation nanolithography and molecular beam epitaxy (MBE) growth techniques in order to control both the nucleation site and number of InAs quantum dots (QDs) inside different motifs printed on GaAs(001) substrates. We find that the presence of B-type slopes (As terminated) inside the pattern motifs is the main parameter for controlling the selectivity of the pattern for InAs growth. We demonstrate that either single InAs QDs or multiple InAs QDs in a lateral arrangement (LQDAs) can be obtained, with a precise control in their position and QD number, simply by varying the fabricated oxide length along the [110] direction.

  19. DNA G-Wire Formation Using an Artificial Peptide is Controlled by Protease Activity.

    Science.gov (United States)

    Usui, Kenji; Okada, Arisa; Sakashita, Shungo; Shimooka, Masayuki; Tsuruoka, Takaaki; Nakano, Shu-Ichi; Miyoshi, Daisuke; Mashima, Tsukasa; Katahira, Masato; Hamada, Yoshio

    2017-11-16

    The development of a switching system for guanine nanowire (G-wire) formation by external signals is important for nanobiotechnological applications. Here, we demonstrate a DNA nanostructural switch (G-wire particles) using a designed peptide and a protease. The peptide consists of a PNA sequence for inducing DNA to form DNA-PNA hybrid G-quadruplex structures, and a protease substrate sequence acting as a switching module that is dependent on the activity of a particular protease. Micro-scale analyses via TEM and AFM showed that G-rich DNA alone forms G-wires in the presence of Ca 2+ , and that the peptide disrupted this formation, resulting in the formation of particles. The addition of the protease and digestion of the peptide regenerated the G-wires. Macro-scale analyses by DLS, zeta potential, CD, and gel filtration were in agreement with the microscopic observations. These results imply that the secondary structure change (DNA G-quadruplex DNA/PNA hybrid structure) induces a change in the well-formed nanostructure (G-wire particles). Our findings demonstrate a control system for forming DNA G-wire structures dependent on protease activity using designed peptides. Such systems hold promise for regulating the formation of nanowire for various applications, including electronic circuits for use in nanobiotechnologies.

  20. Functionalized Self-Assembled InAs/GaAs Quantum-Dot Structures Hybridized with Organic Molecules

    DEFF Research Database (Denmark)

    Chen, Miaoxiang Max; Kobashi, K.; Chen, B.

    2010-01-01

    surfaces provides a direct approach to prove the above concepts. The InAs/GaAs QD structures used in this work consist of a layer of surface InAs QDs and a layer of buried InAs QDs embedded in a wider-bandgap GaAs matrix. An enhancement in photoluminescence intensity by a factor of 3.3 from the buried QDs...

  1. Inhibitions of late INa and CaMKII act synergistically to prevent ATX-II-induced atrial fibrillation in isolated rat right atria.

    Science.gov (United States)

    Liang, Faquan; Fan, Peidong; Jia, Jessie; Yang, Suya; Jiang, Zhan; Karpinski, Serge; Kornyeyev, Dmytro; Pagratis, Nikos; Belardinelli, Luiz; Yao, Lina

    2016-05-01

    Increases in late Na(+) current (late INa) and activation of Ca(2+)/calmodulin-dependent protein kinase (CaMKII) are associated with atrial arrhythmias. CaMKII also phosphorylates Nav1.5, further increasing late INa. The combination of a CaMKII inhibitor with a late INa inhibitor may be superior to each compound alone to suppress atrial arrhythmias. Therefore, we investigated the effect of a CaMKII inhibitor in combination with a late INa inhibitor on anemone toxin II (ATX-II, a late INa enhancer)-induced atrial arrhythmias. Rat right atrial tissue was isolated and preincubated with either the CaMKII inhibitor autocamtide-2-related inhibitory peptide (AIP), the late INa inhibitor GS458967, or both, and then exposed to ATX-II. ATX-II increased diastolic tension and caused fibrillation of isolated right atrial tissue. AIP (0.3μmol/L) and 0.1μmol/L GS458967 alone inhibited ATX-II-induced arrhythmias by 20±3% (mean±SEM, n=14) and 34±5% (n=13), respectively, whereas the two compounds in combination inhibited arrhythmias by 81±4% (n=10, pATX-induced increase of diastolic tension. Consistent with the mechanical and electrical data, 0.3μmol/L AIP and 0.1μmol/L GS458967 each inhibited ATX-II-induced CaMKII phosphorylation by 23±3% and 32±4%, whereas the combination of both compounds inhibited CaMKII phosphorylation completely. The effects of an enhanced late INa to induce arrhythmic activity and activation of CaMKII in atria are attenuated synergistically by inhibitors of late INa and CaMKII. Copyright © 2016 Elsevier Ltd. All rights reserved.

  2. Magnetic properties of amorphous glass-covered wires

    International Nuclear Information System (INIS)

    Chiriac, H.; Ovari, T.-A.

    2002-01-01

    Magnetic properties of ferromagnetic amorphous glass-covered wires with positive, negative, and nearly zero magnetostriction are reviewed. It is shown that their peculiar magnetic characteristics originate during the specific preparation process through dimensions and induced internal stresses. The role of the magnetoelastic coupling on the domain structure formation and subsequently on the magnetization process is discussed, together with the tailoring possibilities of such magnetic materials

  3. The Installation for Fatigue and Destruction Tests of Thin Wires

    Directory of Open Access Journals (Sweden)

    D. V. Prosvirin

    2015-01-01

    Full Text Available The fatigue strength of high-strength materials such as wire is, essentially, dependent on the surface state, stress concentrators, non-metal inclusions, etc. Multifactorial process of damage accumulation and fracture under cyclic loading makes it difficult to predict the durability of structural materials. So fatigue tests, taking into account the operating conditions of stress exposure as much as possible, are of special importance.A feature of the wire fatigue tests is that it is complicated to secure the samples and create the alternate stresses. Currently, there is no equipment to study the fatigue strength of the wire in accordance with GOST 1579-93. Partly the problem of the wire fatigue tests was solved owing to using the installation developed in IMET RAS and considered as the base case. However, the installation has significant disadvantages, namely: a complicated for implementing in practice method to control stresses in the sample; an imperfect system to count cycles; an incapability to change the engine speed of the motor and thus, the frequency of loading.In developing the new design all the basic blocks of installation were upgraded such as drive unit; unit to control stress in the sample; unit for determining the number of cycles to failure.To change the stresses in the sample the paper offers to use the platform from polymethylmethacrylate with slotted curved channels of different radii. The stresses in the sample are dependent on the channel radius R, the wire diameter d and the modulus of elasticity E of the material and may vary in the range of 200 - 1200 MPa. The use of CNC machines in cutting the channels allows stress adjustment within ± 0,1 MPa.The developed design is used to drive the rotation of the wire and makes it possible to change the frequency of loading in the range of 0 - 100 Hz. It is shown that the use of the closing relay in drive design and the transition to an electronic system of determining the number of

  4. Long-Wearing Wire Guide For Welding Torch

    Science.gov (United States)

    Gutow, David A.; Burley, Richard K.; Gilbert, Jeffrey L.; Fogel, Irving

    1992-01-01

    Insert for wire-guide tube on tungsten/inert-gas welding apparatus extends life of guide tube and increases accuracy of weld. Hardened insert resists wear by sliding tungsten wire. Chamfer guides wire into insert.

  5. 29 CFR 1919.79 - Wire rope.

    Science.gov (United States)

    2010-07-01

    ... 29 Labor 7 2010-07-01 2010-07-01 false Wire rope. 1919.79 Section 1919.79 Labor Regulations Relating to Labor (Continued) OCCUPATIONAL SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR (CONTINUED... recommended by the equipment or the wire rope manufacturer due to actual working condition requirements. In...

  6. Automatic inspection of railway overhead wires

    NARCIS (Netherlands)

    Smorenburg, C.; Valkenburg, A.L.G. van

    1988-01-01

    For the Netherlands railway company a system for inspection of the degree of wear of the contact wires is being developed. With an active sensor the reflective under-surface of the overhead wire is illuminated with a laserbeam and reflected radiation is detected by fast CCD detectors. With the

  7. Wire compensation: Performance, SPS MDs, pulsed system

    CERN Document Server

    Dorda, U

    2008-01-01

    A wire compensation (BBLR) scheme has been proposed in order to improve the long range beam-beam performance of the nominal LHC and its phase 1 and phase 2 upgrades[1]. In this paper we present experimental experience of the CERN SPS wires (BBLR) and report on progress with the RF BBLR.

  8. WIRED magazine announces rave awards nominees

    CERN Multimedia

    2002-01-01

    WIRED Magazine has anounced the nominees for its fourth annual WIRED Rave Awards, celebrating innovation and the individuals transforming commerce and culture. Jeffrey Hangst of the University of Aarhus has been nominated in the science category, for his work on the ATHENA Experiment, CERN (1/2 page).

  9. Kirschner Wire Breakage during Removal Requiring Retrieval

    Directory of Open Access Journals (Sweden)

    Kai Yuen Wong

    2016-01-01

    Full Text Available Kirschner wires (K-wires are widely used for fixation of fractures and dislocations in the hand as they are readily available, reliable, and cost-effective. Complication rates of up to 18% have been reported. However, K-wire breakage during removal is rare. We present one such case illustrating a simple technique for retrieval. A 35-year-old male presented with a distal phalanx fracture of his right middle finger. This open fracture was treated with K-wire fixation. Postoperatively, he developed a pin site infection with associated finger swelling. The K-wire broke during removal with the proximal piece completely retained in his middle phalanx. To minimise risk of osteomyelitis, the K-wire was removed with a novel surgical technique. He had full return of hand function. Intraoperative K-wire breakage has a reported rate of 0.1%. In our case, there was no obvious cause of breakage and the patient denied postoperative trauma. On the other hand, pin site infections are much more common with reported rates of up to 7% in the hand or wrist. K-wire fixation is a simple method for bony stabilisation but can be a demanding procedure with complications often overlooked. It is important to be aware of the potential sequelae.

  10. Hot-wire anemometer for spirography.

    Science.gov (United States)

    Plakk, P; Liik, P; Kingisepp, P H

    1998-01-01

    The use of a constant temperature hot-wire anemometer flow sensor for spirography is reported. The construction, operating principles and calibration procedure of the apparatus are described, and temperature compensation method is discussed. Frequency response is studied. It is shown that this hot-wire flow transducer satisfies common demands with respect to accuracy, response time and temperature variations.

  11. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    International Nuclear Information System (INIS)

    Donchev, V; Ivanov, T S; Borisov, K; Angelova, T; Cros, A; Cantarero, A; Fuster, D; Shtinkov, N; Gonzalez, Y; Gonzalez, L

    2010-01-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  12. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    Science.gov (United States)

    Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borisov, K.; Fuster, D.; González, Y.; González, L.

    2010-02-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  13. Guide Wire Entrapment during Central Venous Catheterization

    Directory of Open Access Journals (Sweden)

    Kyung Woo Kim

    2014-05-01

    Full Text Available We experienced a case of venous vessel wall entrapment between the introducer needle and the guide wire during an attempt to perform right internal jugular vein (IJV catheterization. The guide wire was introduced with no resistance but could not be withdrawn. We performed ultrasonography and C-arm fluoroscopy to confirm the entrapment location. We assumed the introducer needle penetrated the posterior vessel wall during the puncture and that only the guide wire entered the vein; an attempt to retract the wire pinched the vein wall between the needle tip and the guide wire. Careful examination with various diagnostic tools to determine the exact cause of entrapment is crucial for reducing catastrophic complications and achieving better outcomes during catheterization procedures.

  14. Propagation of Ultrasonic Guided Waves in Composite Multi-Wire Ropes

    Directory of Open Access Journals (Sweden)

    Renaldas Raisutis

    2016-06-01

    Full Text Available Multi-wire ropes are widely used as load-carrying constructional elements in bridges, cranes, elevators, etc. Structural integrity of such ropes can be inspected by using non-destructive ultrasonic techniques. The objective of this work was to investigate propagation of ultrasonic guided waves (UGW along composite multi-wire ropes in the cases of various types of acoustic contacts between neighboring wires and the plastic core. The modes of UGW propagating along the multi-wire ropes were identified using modelling, the dispersion curves were calculated using analytical and semi-analytical finite element (SAFE techniques. In order to investigate the effects of UGW propagation, the two types of the acoustic contact between neighboring wires were simulated using the 3D finite element method (FE as well. The key question of investigation was estimation of the actual boundary conditions between neighboring wires (solid or slip and the real depth of penetration of UGW into the overall cross-section of the rope. Therefore, in order to verify the results of FE modelling, the guided wave penetration into strands of multi-wire rope was investigated experimentally. The performed modelling and experimental investigation enabled us to select optimal parameters of UGW to be used for non-destructive testing.

  15. STRENGTHENING OF A REINFORCED CONCRETE BRIDGE WITH PRESTRESSED STEEL WIRE ROPES

    Directory of Open Access Journals (Sweden)

    Kexin Zhang

    2017-10-01

    Full Text Available This paper describes prestressed steel wire ropes as a way to strengthen a 20-year-old RC T-beam bridge. High strength, low relaxation steel wire ropes with minor radius, high tensile strain and good corrosion resistance were used in this reinforcement. The construction process for strengthening with prestressed steel wire ropes—including wire rope measuring, extruding anchor heads making, anchorage installing, tensioning steel wire ropes and pouring mortar was described. Ultimate bearing capacity of the bridge after strengthening was discussed based on the concrete structure theory. The flexural strength of RC T-beam bridges strengthened with prestressed steel wire ropes was governed by the failure of concrete crushing. To investigate effectiveness of the strengthening method, fielding-load tests were carried out before and after strengthening. The results of concrete strain and deflection show that the flexural strength and stiffness of the strengthened beam are improved. The crack width measurement also indicates that this technique could increase the durability of the bridge. Thus, this strengthened way with prestressed steel wire rope is feasible and effective.

  16. Sulfur budget and global climate impact of the A.D. 1835 eruption of Cosigüina volcano, Nicaragua

    Science.gov (United States)

    Longpré, Marc-Antoine; Stix, John; Burkert, Cosima; Hansteen, Thor; Kutterolf, Steffen

    2014-10-01

    Large explosive volcanic eruptions can inject massive amounts of sulfuric gases into the Earth's atmosphere and, in so doing, affect global climate. The January 1835 eruption of Cosigüina volcano, Nicaragua, ranks among the Americas' largest and most explosive historical eruptions, but whether it had effects on global climate remains ambiguous. New petrologic analyses of the Cosigüina deposits reveal that the eruption released enough sulfur to explain a prominent circa A.D. 1835 sulfate anomaly in ice cores from both the Arctic and Antarctic. A compilation of temperature-sensitive tree ring chronologies indicates appreciable cooling of the Earth's surface in response to the eruption, consistent with instrumental temperature records. We conclude that this eruption represents one of the most important sulfur-producing events of the last few centuries and had a sizable climate impact rivaling that of the 1991 eruption of Mount Pinatubo.

  17. Raman Spectroscopy of InAs Based Nanowires & Electronic Characterization of Heterostructure InAs/GaInAs Nanowires

    DEFF Research Database (Denmark)

    Tanta, Rawa

    The work presented in this thesis represents two main topics. The first one, which covers a bigger volume of the thesis, is mainly about Raman spectroscopy on individual InAs based nanowires. The second part presents electronic characterization of heterostructure InAs/GaInAs nanowires. Raman...... modes. In the last chapter of this thesis we present a study on electrical characterization of InAs/GaInAs heterostructure nanowires. First, we performed selective etching experiments in order to locate the barriers. Second, the barriers were probed electrically by performing thermally activated...... spectroscopy measurements on InAs based nanowires include several topics. Firstly, we use polarized Raman spectroscopy for determining the crystal orientation of the nanowires based on conventional Raman selection rules. We studied the effect of the high power laser irradiation on the nanowire, and its...

  18. Low temperature transport in p-doped InAs nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal

    2013-01-01

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

  19. First-principles structure determination of interface materials: The NixInAs nickelides

    Science.gov (United States)

    Schusteritsch, Georg; Hepplestone, Steven P.; Pickard, Chris J.

    2015-08-01

    We present here a first-principles study of the ternary compounds formed by Ni, In, and As, a material of great importance for self-aligned metallic contacts in next-generation InAs-based MOS transistors. The approach we outline is general and can be applied to study the crystal structure and properties of a host of other new interface compounds. Using the ab initio random structure searching approach we find the previously unknown low-energy structures of NixInAs and assess their stability with respect to the known binary compounds of Ni, In, and As. Guided by experiments, we focus on Ni3InAs and find a rich energy landscape for this stoichiometry. We consider the five lowest-energy structures, with space groups P m m n , P b c m , P 21/m , C m c m , and R 3 ¯ . The five low-energy structures for Ni3InAs are all found to be metallic and nonmagnetic. By comparison to previously published TEM results we identify the crystal structure observed in experiments to be C m c m Ni3InAs . We calculate the work function for C m c m Ni3InAs and, according to the Schottky-Mott model, expect the material to form an Ohmic contact with InAs. We further explicitly consider the interface between C m c m Ni3InAs and InAs and find it to be Ohmic with an n -type Schottky barrier height of -0.55 eV .

  20. Single wire drift chamber design

    Energy Technology Data Exchange (ETDEWEB)

    Krider, J.

    1987-03-30

    This report summarizes the design and prototype tests of single wire drift chambers to be used in Fermilab test beam lines. The goal is to build simple, reliable detectors which require a minimum of electronics. Spatial resolution should match the 300 ..mu..m rms resolution of the 1 mm proportional chambers that they will replace. The detectors will be used in beams with particle rates up to 20 KHz. Single track efficiency should be at least 99%. The first application will be in the MT beamline, which has been designed for calibration of CDF detectors. A set of four x-y modules will be used to track and measure the momentum of beam particles.

  1. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2016-11-15

    The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancement of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.

  2. Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

    2011-01-01

    In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

  3. Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

    Energy Technology Data Exchange (ETDEWEB)

    Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

    2011-12-28

    It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

  4. Coarsening process of high-density InAs quantum dots on Sb-irradiated GaAs

    Science.gov (United States)

    Kakuda, Naoki; Yamaguchi, Koichi

    2018-04-01

    High-density InAs quantum dots were grown on Sb-irradiated GaAs(001) by MBE. From InAs coverage and Sb irradiation time (SIT) dependences, the coarsening process of dots for long SIT (50 s) was classified according to four coverage regions. After the dot density rapidly increased and then reached the maximum (region I), the dot density decreased as the InAs coverage increased (region II). This decrease in dot density was attributed to quantum dot ripening. For a short SIT (7 s), the dot density was maintained without the ripening. In region III, the dot density was nearly constant value [(1.2–1.4) × 1011 cm‑2], despite the different SITs. In addition, the dot size was limited by stable {011} facets, and an inhomogeneous broadening of dot size distribution was improved. However, for a long SIT (50 s), small dots remained owing to the ripening. In region IV, coalescence occurred, and the density of giant dots slightly increased.

  5. Comparison between C1-2 Fixation with and without Supplemental Posterior Wiring.

    Science.gov (United States)

    Tran, Mai; Wadhwa, Rishi; Ziewacz, John; Mummaneni, Praveen; Chou, Dean

    2014-04-01

    Study Design Retrospective analysis. Clinical Question Is there a difference between the screw-rod construct (SRC) procedure without wiring and the SRC procedure with wiring with respect to fusion, implant failure, reoperation, donor-site morbidity, and complication rates? Patients and Methods We performed a retrospective analysis of 26 patients who underwent C1-2 fixation between 2004 and 2012 (SRC with wiring and structural bone graft, 13 patients; SRC with autograft but without wiring, 13 patients). Fusion was assessed using dynamic X-rays in all patients and computed tomographic scans in selected cases. Pseudoarthrosis was confirmed during reoperation. Results The mean follow-up time was 2 years and 5 months for the SRC without wiring group and 2 years and 1 month for the SRC with wiring group. Patients with less than 1-year follow-up time were excluded. The fusion rate, implant failure rate, and reoperation rates for the SRC without wiring group were 92, 8, and 8%, respectively. The fusion, implant failure, and reoperation rates for the SRC with wiring group were 100, 0, and 0%, respectively. There were no donor-site morbidities or complications in either group (both 0%). There were no differences in parameters we examined between the two groups (p > 0.05 for each rate, Fisher exact test). Conclusions The results suggest that supplementing the SRC procedure with wiring may increase fusion rate, but this difference is not statistically significant. Although the sample size was small, there was not a significant discrepancy in outcomes between the two groups at an average follow-up of 2 years. [Table: see text].

  6. ECAE-processed Cu-Nb and Cu-Ag nanocomposite wires for pulse magnet applications

    International Nuclear Information System (INIS)

    Edgecumbe Summers, T.S.; Walsh, R.P.; Pernambuco-Wise, P.

    1997-01-01

    Cu-Nb and Cu-Ag nanocomposites have recently become of interest to pulse magnet designers because of their unusual combination of high strength with reasonable conductivity. In the as-cast condition, these conductors consist of two phases, one of almost pure Nb (or Ag) and the other almost pure Cu. When these castings are cold worked as in a wire-drawing operation for example, the two phases are drawn into very fine filaments which produce considerable strengthening without an unacceptable decrease in conductivity. Unfortunately, any increase in strength with operations such as wire drawing is accompanied by a reduction in the cross section of the billet, and thus far, no wires with strengths on the order of 1.5 GPa or more have been produced with cross sections large enough to be useful in magnet applications. Equal Channel Angular Extrusion (ECAE) is an innovative technique which allows for the refinement of the as-cast ingot structure without a reduction in the cross sectional dimensions. Samples processed by the ECAE technique prior to wire drawing should be stronger at a given wire diameter than those processed by wire drawing alone. The tensile properties of wire-drawn Cu-18%Nb and Cu-25%Ag both with and without prior ECAE processing were tested and compared at both room temperature and 77K. All samples were found to have resistivities consistent with their strengths, and the strengths of the ECAE-processed wires were significantly higher than their as-cast and drawn counterparts. Therefore, with ECAE processing prior to wire drawing, it appears to be possible to make high-strength conductors with adequately large cross sections for pulse magnets

  7. Further Studies, About New Elements Production, by Electrolysis of Cathodic Pd Thin–Long Wires, in Alcohol-Water Solutions (H, D) and Th-Hg Salts. New Procedures to Produce Pd Nano-Structures

    CERN Document Server

    Celani, F; Righi, E; Trenta, G; Catena, C; D’Agostaro, G; Quercia, P; Andreassi, V; Marini, P; Di Stefano, V; Nakamura, M; Mancini, A; Sona, P G; Fontana, F; Gamberale, L; Garbelli, D; Celia, E; Falcioni, F; Marchesini, M; Novaro, E; Mastromatteo, U

    2005-01-01

    Abstract They were continued, at National Institute of Nuclear Physics, Frascati National Laboratories-Italy, the systematic studies about detection of new elements, some even with isotopic composition different from natural one, after prolonged electrolysis of Pd wires. The electrolytic solution adopted is the, unusual, used from our experimental group since 1999. In short, it was a mixture of both heavy ethyl alcohol (C2H5OD at 90-95%) and water (D2O, at 10-5%), with Th salts at micromolar concentration and Hg at even lower concentration (both of spectroscopic purity). The liquid solutions, before use, were carefully vacuum distilled (and on line 100nm filtered) at low temperatures (30-40°C) and analysed by ICP-MS. The pH was kept quite mild (acidic at about 3-4). The cathode is Pd (99.9% purity) in the shape of long (60cm) and thin wires (diameter only 0.05mm). Before use, it is carefully cleaned and oxidised by Joule heating in air following a (complex) procedure from us continuously improved (since 1995...

  8. Wave-to-wire Modelling of Wave Energy Converters

    DEFF Research Database (Denmark)

    Ferri, Francesco

    different techniques to reduce the cost of energy are compared: the former maximises the system revenue (income) by acting on the control logic, while the second extends the first methods adding a penalty term due to the effect of the control logic on the structural design. Both methods are once more based...... applicable, efficient and reliable wave-to-wire model tool is needed. A wave-to-wire model identifies the relation from the source of energy of a particular location to the expected device productivity. The latter being expressed in terms of electricity fed into the grid. The model needs to output a coarse...... the best of what we have", the numerical model used is entirely based on well established methods. The experimental data is used as a check point to verify the direction of the numerical path. Second, shed light on what should be the objective of the sector: minimisation of the cost of energy. Two...

  9. Genetic programming techniques for thin-wire antennas

    Science.gov (United States)

    O'Donnell, Terry H.

    2007-04-01

    Simple genetic algorithm optimizations often utilize fixed-length chromosomes containing a predefined set of parameters to be optimized. While such algorithms have successfully created electrically small narrow-band and large wide-band military antennas, they require the antenna designer to have a fairly concrete antenna representation prior to exercising the genetic algorithm. In this research we investigate the use of genetic programming (GP) techniques to "program" the design of simple thin-wire antennas. Genetic programming techniques offer the potential to create random, multi-arm, multi-dimension antennas from variable length, tree-like chromosomes. We present a new genetic programming paradigm for creating multi-branched, thin-wire, genetic antennas and describe how GP commands are represented and decoded into physical antenna structures. We present preliminary results obtained from this algorithm showing evolutions along Pareto fronts representing antenna electrical size, VSWR, and antenna quality factor (Q).

  10. Minimum quench energy measurement for superconducting wires

    International Nuclear Information System (INIS)

    Seo, K.; Morita, M.; Nakamura, S.; Yamada, T.; Jizo, Y.

    1996-01-01

    The authors have developed a new method of measuring minimum quench energy (MQE) of superconducting wire. There have been conventional methods using heating wires, whose diameters are ∼0.1mm and are glued by epoxy resin. When they induce a pulse heat to superconducting wires, a duration of the pulse must be several hundreds micro seconds to demonstrate actual disturbances (for instance wire motion) in a superconducting magnet. In spite of this fact, thermal diffusion time constants of the conventional heaters are larger than the duration of the actual disturbance, because of these electrical insulator of the heating wire and the epoxy bind. Therefore, this kind of heater is not able to demonstrate the actual disturbance. To solve this problem, they have proposed a new constitution of a heater. In the method, heat generation is introduced in high resistive layer on a surface of a superconducting wire. The high resistive layer is consist of carbon paste. The thickness of the carbon paste layer is ∼20microm, thus a time constant of this heater is expected to be small enough to demonstrate the actual disturbance. Adopting the new method to the MQE measurement, they successfully evaluate MQE of superconducting wires with high precision. Several results are introduced in this paper

  11. Wire pad chamber for LHCb muon system

    CERN Document Server

    Botchine, B; Lazarev, V A; Sagidova, N; Vorobev, A P; Vorobyov, A; Vorobyov, Alexei

    2000-01-01

    2000-003 Wire pad chambers (WPC) have been proposed for the outer Region 4 of the LHCb Muon System. These are double gap MWPCs with small wire spacing allowing to obtain 99% detection efficiency in a 20 ns time window. The chambers have a rectangular shape with the vertical dimension from 20 cm in Station 1 to 30 cm in Station 5. The horizontal dimensions will be different with the maximal size of 3 meters in Station 5. The wires are in the vertical direction. The short wire length allows to use small wire spacing needed for high time resolution. Also, this helps to obtain the uniform gas gain over the whole chamber area. The WPC has one row of the wire pads formed by grouping wires in separate readout channels. Four WPC prototypes have been built at PNPI and tested in the PS beam at CERN. Here we report on the results from these tests. Also, the results of simulation of the WPC performance are presented.

  12. Binding energy and optical properties of an off-center hydrogenic donor impurity in a spherical quantum dot placed at the center of a cylindrical nano-wire

    International Nuclear Information System (INIS)

    Safarpour, Gh.; Barati, M.; Zamani, A.; Niknam, E.

    2014-01-01

    The binding energy as well as the linear, third-order nonlinear and total optical absorption coefficient and refractive index changes of an off-center hydrogenic donor impurity in an InAs spherical quantum dot placed at the center of a GaAs cylindrical nano-wire have been investigated. In this regard, the effective-mass approximation approach is considered and eigenvalues and corresponding eigenfunctions are calculated via the finite element method. The binding energy is plotted as a function of the dot size and impurity position along with optical properties as a function of photon energy. In this study two different directions have been considered for impurity position, along the nano-wire axis and perpendicular to it. It has been found that the binding energy, absorption coefficient and refractive index changes are impressively affected not only by the dot radius but also by the position of the impurity and its direction. Additionally, the optical saturation can be tuned by the direction of the impurity and incident optical intensity. -- Highlights: • We consider spherical quantum dot located at the center of a cylindrical nano-wire. • An off-center hydrogenic donor impurity is considered in the system. • Binding energy is affected by orientation of impurity and its distance from center. • Saturation depends on the orientation of impurity position. • By shifting impurity position, orientation and dot radius blue- and red-shifts appear

  13. Spin transport in dangling-bond wires on doped H-passivated Si(100)

    International Nuclear Information System (INIS)

    Kepenekian, Mikaël; Robles, Roberto; Lorente, Nicolás; Rurali, Riccardo

    2014-01-01

    New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters. (paper)

  14. Problems associated with iridium-192 wire implants

    International Nuclear Information System (INIS)

    Arnott, S.J.; Law, J.; Ash, D.; Flynn, A.; Paine, C.H.; Durrant, K.R.; Barber, C.D.; Dixon-Brown, A.

    1985-01-01

    Three incidents are reported, from different radiotherapy centres, in which an implanted iridium-192 wire remained in the tissues of a patient after withdrawal of the plastic tubing in which it was contained. In each case the instrument used to cut the wire had probably formed a hook on the end of the wire which caused it to catch in the tissues. Detailed recommendations are made for avoiding such incidents in the future, the most important of which is that the patient should be effectively monitored after the supposed removal of all radioactive sources. (author)

  15. Investigation of wire motion in superconducting magnets

    International Nuclear Information System (INIS)

    Ogitsu, T.; Tsuchiya, K.; Devred, A.

    1990-09-01

    The large Lorentz forces occuring during the excitation of superconducting magnets can provoke sudden motions of wire, which eventually release enough energy to trigger a quench. These wire motions are accompanied by two electromagnetic effects: an induced emf along the moved wire, and a local change in flux caused by the minute dislocation of current. Both effects cause spikes in the coil voltage. Voltage data recorded during the excitation of a superconducting quadrupole magnet which early exhibit such events are here reported. Interpretations of the voltage spikes in terms of energy release are also presented, leading to insights on the spectrum of the disturbances which occur in real magnets. 15 refs

  16. Modeling the pullout characteristics of welded wire mats embedded in silty sand

    International Nuclear Information System (INIS)

    Sampaco, C.L.; Anderson, L.R.; Nielson, M.R.

    1994-01-01

    This paper is an outgrowth of the on-going research on discrete finite element modeling of welded wire mesh reinforced soil structures such as the welded wire and RSE walls. The stiffness characteristics of the wire mesh-soil interfaces are modeled by a nonlinear hyperbolic relationship between the applied pullout stress and the associated mat placement. The relevant parameters are estimated from laboratory pullout tests that were conducted for welded wire mats embedded on silty sand. Since the bulk of the pullout resistance of welded wire mesh reinforcements is derived from the bearing resistance of the transverse wires that constitute the test mats. This feature permits proper evaluation of actual interface parameters for the actual reinforced soil structures in which the actual lengths of the mats are longer (i.e. more transverse members) than the specimen used in the laboratory pullout tests. The resulting pullout stress-displacement formulations are then verified by comparing the predicted pullout resistance to the existing specifications and design methods for estimated the pullout capacities of grid reinforcements. 22 refs., 13 figs

  17. Thermoelectric properties of the Bi-15 at%Sb wires in weak magnetic field

    International Nuclear Information System (INIS)

    Popov, I.A.

    2011-01-01

    Full text: At concentration Sb (0.08 1-x Sb x is the semiconductor with inverted - band specter. In such nanowires with the inverted spectrum, can be realized of a topological insulator (TI) state. Long individual single-crystal Bi-15at%Sb nanowires in glass capillary with diameters 0.1mkm-2mkm were fabricated by liquid phase casting. Multiple horizontal zone recrystallization of the nanowires was used for the homogenization of wires and to improve their structural perfection. The measurement the angular rotation diagrams transverse [H perpendicular I] magnetoresistance in a weak magnetic field at 300 K and 77 K have allowed to conclude that Bi 1-x Sb x wires all composition and diameter had same orientation (1011)- along the wire axis. In this case value the energy gap is approximately 25 meV. As it has been shown at realization of quantum dimensional effect, in semiconductor Bi-Sb wires, the gap should increase. In thin Bi-15at%Sb wires we observed adverse effect. It is visible, that at temperatures T 2 σ depending on diameter of wires, structure, temperature and a magnetic field is calculated. In connection with topological insulators, we will discuss the effect of the surface state in the thermoelectric properties. (author)

  18. Strong composition-dependent disorder in InAs1-xNx alloys

    International Nuclear Information System (INIS)

    Benaissa, H.; Zaoui, A.; Ferhat, M.

    2009-01-01

    We investigate the main causes of disorder in the InAs 1-x N x alloys (x = 0, 0.03125, 0.0625, 0.09375, 0.125, 0.25, 0.5, 0.75, 0.875, 0.90625, 0.9375, 0.96875 and 1). The calculation is based on the density-functional theory in the local-density approximation. We use a plane wave-expansion non-norm conserving ab initio Vanderbilt pseudopotentials. To avoid the difficulty of considering the huge number of atomic configurations, we use an appropriate strategy in which we consider four configurations for a given composition where the N atoms are not randomly distributed. We mainly show that the band gap decreases (increases) rapidly with increasing (decreasing) compositions of N. As a consequence the optical band gap bowing is found to be strong and composition dependent. The obtained compounds, from these alloys, may change from semi-conducting to metal (passing to a negative bowing) and could be useful for device applications, especially at certain composition.

  19. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    International Nuclear Information System (INIS)

    Shimomura, K.; Kamiya, I.

    2015-01-01

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers

  20. Gold-wire artifacts on diagnostic radiographs: A case report

    Energy Technology Data Exchange (ETDEWEB)

    Keestra, Johan Anton Jochum; Jacobs, Reinhilde; Quirynen, Marc [Dept. of Oral Health Sciences, KU Leuven and Dentistry, University Hospitals, KU Leuven, Leuven (Belgium)

    2014-03-15

    This report described a case in which diagnostic radiographs showed irregular dense radiopaque strings and curved lines in the head and neck area. These artifacts could lead to misinterpretation since they may obscure anatomical structures and/or mask critical structures/pathologies. A more detailed history of the patient indicated that these strings originated from a facelift procedure in which a gold-wire technique was used. Considering that such intervention may cause a radiodiagnostic burden, it should be included in the anamnesis prior to radiography.

  1. Gold-wire artifacts on diagnostic radiographs: A case report

    International Nuclear Information System (INIS)

    Keestra, Johan Anton Jochum; Jacobs, Reinhilde; Quirynen, Marc

    2014-01-01

    This report described a case in which diagnostic radiographs showed irregular dense radiopaque strings and curved lines in the head and neck area. These artifacts could lead to misinterpretation since they may obscure anatomical structures and/or mask critical structures/pathologies. A more detailed history of the patient indicated that these strings originated from a facelift procedure in which a gold-wire technique was used. Considering that such intervention may cause a radiodiagnostic burden, it should be included in the anamnesis prior to radiography.

  2. A High-Sensitivity Current Sensor Utilizing CrNi Wire and Microfiber Coils

    Directory of Open Access Journals (Sweden)

    Xiaodong Xie

    2014-05-01

    Full Text Available We obtain an extremely high current sensitivity by wrapping a section of microfiber on a thin-diameter chromium-nickel wire. Our detected current sensitivity is as high as 220.65 nm/A2 for a structure length of only 35 μm. Such sensitivity is two orders of magnitude higher than the counterparts reported in the literature. Analysis shows that a higher resistivity or/and a thinner diameter of the metal wire may produce higher sensitivity. The effects of varying the structure parameters on sensitivity are discussed. The presented structure has potential for low-current sensing or highly electrically-tunable filtering applications.

  3. 47 CFR 76.802 - Disposition of cable home wiring.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 4 2010-10-01 2010-10-01 false Disposition of cable home wiring. 76.802... MULTICHANNEL VIDEO AND CABLE TELEVISION SERVICE Cable Inside Wiring § 76.802 Disposition of cable home wiring... cable operator shall not remove the cable home wiring unless it gives the subscriber the opportunity to...

  4. Automatic reel controls filler wire in welding machines

    Science.gov (United States)

    Millett, A. V.

    1966-01-01

    Automatic reel on automatic welding equipment takes up slack in the reel-fed filler wire when welding operation is terminated. The reel maintains constant, adjustable tension on the wire during the welding operation and rewinds the wire from the wire feed unit when the welding is completed.

  5. 47 CFR 32.2321 - Customer premises wiring.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Customer premises wiring. 32.2321 Section 32... Customer premises wiring. (a) This account shall include all amounts transferred from the former Account 232, Station Connections, inside wiring subclass. (b) Embedded Customer Premises Wiring is that...

  6. 30 CFR 77.701-3 - Grounding wires; capacity.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding wires; capacity. 77.701-3 Section 77... MINES Grounding § 77.701-3 Grounding wires; capacity. Where grounding wires are used to ground metallic sheaths, armors, conduits, frames, casings, and other metallic enclosures, such grounding wires will be...

  7. Wire Bonder: Kulicke and Soffa Model 4526

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Name: Wire BonderNeeds Description.Scientific Opportunities / Applications:Wedge bonderSemi-automatic and manual modesIndependent Z-axis control,...

  8. Beam Profiling through Wire Chambing Tracking

    CERN Document Server

    Nash, W

    2013-01-01

    This note describes the calibration of the Delay Wire Chambers (DWCs) used during test runs of CALICE’s Tungsten Digital Hadron Calorimeter (W-DHCAL) prototype in CERN’s SPS beam line (10 – 300 GeV).

  9. Copyright and Wire Broadcasting Under Belgian Law

    Science.gov (United States)

    Namurois, Albert

    1975-01-01

    A discussion of a case whereby substantial damages, if not criminal proceedings, will sanction, according to circumstances, both television organizations and those who in certain conditions distribute their programs by wire or communicate them to the public. (Author/HB)

  10. Josephson junction arrays and superconducting wire networks

    International Nuclear Information System (INIS)

    Lobb, C.J.

    1992-01-01

    Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

  11. Highly stretchable wrinkled gold thin film wires.

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D; Khine, Michelle

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  12. Tensosensitivity of the Hot-Wire Probe

    National Research Council Canada - National Science Library

    Pak, A

    2002-01-01

    ...., on the anemometer type. In a constant current anemometer, it is possible to measure and separate out the noise moving to the electric circuit of the anemometer, it is not the case with hot-wire anemometers of other types...

  13. Load-Deflection and Friction Properties of PEEK Wires as Alternative Orthodontic Wires.

    Science.gov (United States)

    Tada, Yoshifumi; Hayakawa, Tohru; Nakamura, Yoshiki

    2017-08-09

    Polyetheretherketone (PEEK) is now attracting attention as an alternative to metal alloys in the dental field. In the present study, we evaluated the load-deflection characteristics of PEEK wires in addition to their frictional properties. Three types of PEEK wires are used: two sizes of rectangular shape, 0.016 × 0.022 in² and 0.019 × 0.025 in² (19-25PEEK), and rounded shape, diameter 0.016 in (16PEEK). As a control, Ni-Ti orthodontic wire, diameter 0.016 in, was used. The three-point bending properties were evaluated in a modified three-point bending system for orthodontics. The static friction between the orthodontic wire and the bracket was also measured. The load-deflection curves were similar among Ni-Ti and PEEK wires, except for 16PEEK with slot-lid ligation. The bending force of 19-25PEEK wire was comparable with that of Ni-Ti wire. 19-25PEEK showed the highest load at the deflection of 1500 μm ( p 0.05). No significant difference was seen in static friction between all three PEEK wires and Ni-Ti wire ( p > 0.05). It is suggested that 19-25PEEK will be applicable for orthodontic treatment with the use of slot-lid ligation.

  14. Audio wiring guide how to wire the most popular audio and video connectors

    CERN Document Server

    Hechtman, John

    2012-01-01

    Whether you're a pro or an amateur, a musician or into multimedia, you can't afford to guess about audio wiring. The Audio Wiring Guide is a comprehensive, easy-to-use guide that explains exactly what you need to know. No matter the size of your wiring project or installation, this handy tool provides you with the essential information you need and the techniques to use it. Using The Audio Wiring Guide is like having an expert at your side. By following the clear, step-by-step directions, you can do professional-level work at a fraction of the cost.

  15. Note: Improved wire-wound heater.

    Science.gov (United States)

    Steinmann, Ricardo G; Vitoux, Hugo

    2015-01-01

    The authors have measured, at cryogenic temperature, the upper limit of the heat transfer in different configurations of a wire-wound heater. We found that the heat transferred has an upper limit of about 15 W/cm(2) and is dependent on the diameter of the wire. In this paper, we present three ways of increasing the heat transferred by this type of heater and its application in different continuous flow cryostats.

  16. Graphene wire medium: Homogenization and application

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Chigrin, Dmitry N.; Lavrinenko, Andrei

    2012-01-01

    In this contribution we analyze numerically the optical properties of the graphene wire medium, which unit cell consists of a stripe of graphene embedded into dielectric. We propose a simple method for retrieval of the isofrequency contour and effective permittivity tensor. As an example...... of the graphene wire medium application we demonstrate a reconfigurable hyperlens for the terahertz subwavelength imaging capable of resolving two sources with separation λ0/5 in the far-field....

  17. Novel use of the "buddy"wire.

    LENUS (Irish Health Repository)

    O'Hare, A

    2008-12-29

    Summary: During interventional procedures the tortuosity of the vasculature hampers catheter stability. The buddy wire may be used to aid and maintain vascular access.We describe a case of acute subarachnoid haemorrhage secondary to dissecting aneurysm of the vertebral artery.We discuss the value of the buddy wire during balloon occlusion of the vertebral artery not as it is typically used, but to actually prevent the balloon repeatedly entering the posterior inferior cerebellar artery during the procedure.

  18. A Magnetic Sensor with Amorphous Wire

    Directory of Open Access Journals (Sweden)

    Dongfeng He

    2014-06-01

    Full Text Available Using a FeCoSiB amorphous wire and a coil wrapped around it, we have developed a sensitive magnetic sensor. When a 5 mm long amorphous wire with the diameter of 0.1 mm was used, the magnetic field noise spectrum of the sensor was about 30 pT/ÖHz above 30 Hz. To show the sensitivity and the spatial resolution, the magnetic field of a thousand Japanese yen was scanned with the magnetic sensor.

  19. COBRA-IV wire wrap data comparisons

    International Nuclear Information System (INIS)

    Donovan, T.E.; George, T.L.; Wheeler, C.L.

    1979-02-01

    Thermal hydraulic analyses of hexagonally packed wire-wrapped fuel assemblies are complicated by the induced crossflow between adjacent subchannels. The COBRA-IV computer code simultaneously solves the hydrodynamics and thermodynamics of fuel assemblies. The modifications and the results are presented which are predicted by the COBRA-IV calculation. Comparisons are made with data measured in five experimental models of a wire-wrapped fuel assembly

  20. Wiring System Diagnostic Techniques for Legacy Aircraft

    Science.gov (United States)

    2003-02-01

    Reunions des specialistes des techniques de estion du cycle de vie pour vehicules aeriens vieillissants ] To order the complete compilation report, use...Ageing Mechanisms and Control. Specialists’ Meeting on Life Management Techniques for Ageing Air Vehicles [Les mecanismes vieillissants et le controle...be identified. Additionally, wiring failures tend to be intermittent in nature and can take considerable time to isolate. Wire modifications and

  1. Energetics and electronic properties of Pt wires of different topologies on monolayer MoSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Jamdagni, Pooja, E-mail: j.poojaa1228@gmail.com; Ahluwalia, P. K. [Physics Department, Himachal Pradesh University, Shimla, Himachal Pradesh, India 171005 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Panjab, Bathinda, India, 151001 (India); Thakur, Anil [Physics Department, Govt. Collage Solan, Himachal Pradesh, India, 173212 (India); Pandey, Ravindra [Physics Department, Michigan Technological University, Houghton (United States)

    2016-05-23

    The energetics and electronic properties of different topology of Pt wires including linear, zigzag and ladder structures on MoSe{sub 2} monolayer have been investigated in the framework of density functional theory (DFT). The predicted order of stability of Pt wire on MoSe{sub 2} monolayer is found to be: linear > ladder > zigzag. Pt wires induce states near the Fermi level of MoSe{sub 2} that results into metallic characteristics of Pt-wire/MoSe{sub 2} assembled system. Valence band charge density signifies most of the contribution from Pt atoms near the Fermi energy of assembled wire/MoSe{sub 2} system. These findings are expected to be important for the fabrication of devices based on MoSe{sub 2} layers for flexible nanoelectronics.

  2. A cycloidal wobble motor driven by shape memory alloy wires

    Science.gov (United States)

    Hwang, Donghyun; Higuchi, Toshiro

    2014-05-01

    A cycloidal wobble motor driven by shape memory alloy (SMA) wires is proposed. In realizing a motor driving mechanism well known as a type of reduction system, a cycloidal gear mechanism is utilized. It facilitates the achievement of bidirectional continuous rotation with high-torque capability, based on its high efficiency and high reduction ratio. The applied driving mechanism consists of a pin/roller based annular gear as a wobbler, a cycloidal disc as a rotor, and crankshafts to guide the eccentric wobbling motion. The wobbling motion of the annular gear is generated by sequential activation of radially phase-symmetrically placed SMA wires. Consequently the cycloidal disc is rotated by rolling contact based cycloidal gearing between the wobbler and the rotor. In designing the proposed motor, thermomechanical characterization of an SMA wire biased by extension springs is experimentally performed. Then, a simplified geometric model for the motor is devised to conduct theoretical assessment of design parametric effects on structural features and working performance. With consideration of the results from parametric analysis, a functional prototype three-phase motor is fabricated to carry out experimental verification of working performance. The observed experimental results including output torque, rotational speed, bidirectional positioning characteristic, etc obviously demonstrate the practical applicability and potentiality of the wobble motor.

  3. Subchannel Analysis of Wire Wrapped SCWR Assembly

    Directory of Open Access Journals (Sweden)

    Jianqiang Shan

    2014-01-01

    Full Text Available Application of wire wrap spacers in SCWR can reduce pressure drop and obtain better mixing capability. As a consequence, the required coolant pumping power is decreased and the coolant temperature profile inside the fuel bundle is flattened which will obviously decrease the peak cladding temperature. The distributed resistance model for wire wrap was developed and implemented in ATHAS subchannel analysis code. The HPLWR wire wrapped assembly was analyzed. The results show that: (1 the assembly with wire wrap can obtain a more uniform coolant temperature profile than the grid spaced assembly, which will result in a lower peak cladding temperature; (2 the pressure drop in a wire wrapped assembly is less than that in a grid spaced assembly, which can reduce the operating power of pump effectively; (3 the wire wrap pitch has significant effect on the flow in the assembly. Smaller Hwire/Drod will result in stronger cross flow a more uniform coolant temperature profile, and also a higher pressure drop.

  4. Superconducting wires and methods of making thereof

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xingchen; Sumption, Michael D.; Peng, Xuan

    2018-03-13

    Disclosed herein are superconducting wires. The superconducting wires can comprise a metallic matrix and at least one continuous subelement embedded in the matrix. Each subelement can comprise a non-superconducting core, a superconducting layer coaxially disposed around the non-superconducting core, and a barrier layer coaxially disposed around the superconducting layer. The superconducting layer can comprise a plurality of Nb.sub.3Sn grains stabilized by metal oxide particulates disposed therein. The Nb.sub.3Sn grains can have an average grain size of from 5 nm to 90 nm (for example, from 15 nm to 30 nm). The superconducting wire can have a high-field critical current density (J.sub.c) of at least 5,000 A/mm.sup.2 at a temperature of 4.2 K in a magnetic field of 12 T. Also described are superconducting wire precursors that can be heat treated to prepare superconducting wires, as well as methods of making superconducting wires.

  5. Si Wire-Array Solar Cells

    Science.gov (United States)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  6. 75 FR 60480 - In the Matter of Certain Bulk Welding Wire Containers and Components Thereof and Welding Wire...

    Science.gov (United States)

    2010-09-30

    ... COMMISSION In the Matter of Certain Bulk Welding Wire Containers and Components Thereof and Welding Wire... importation, or the sale within the United States after importation of certain bulk welding wire containers, components thereof, and welding wire by reason of infringement of certain claims of United States Patent Nos...

  7. Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

    2009-06-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  8. 99mTc-MIBI/123I-Na subtraction scanning for localized parathyroid adenoma in patients with asymptomatic/mild primary hyperparathyroidism

    International Nuclear Information System (INIS)

    Tanaka, Yuji; Funahashi, Hiroomi; Imai, Tsuneo

    1996-01-01

    Primary hyperparathyroidism is most commonly detected as a mild elevation of the serum calcium concentration. In the present study, the utility of 99m Tc-methoxyisobutylisonitrile (MIBI) imaging before initial surgery was evaluated for localizing abnormal parathyroid glands in patients with asymptomatic and mild primary hyperparathyroidism. The results were compared with those of thallium-technetium subtraction scanning (TTSS). 99m Tc-MIBI/ 123 I-Na subtraction scanning was performed in 11 patients, and TTSS was performed in 10 of them. The sensitivity was 100% and the positive predictive value was 92% for 99m Tc-MIBI/ 123 I-Na, while the sensitivity was 50% and the positive predictive value was 100% for TTSS. The smallest gland detected weighed 85 mg in 99m Tc-MIBI/ 123 I-Na, and 570 mg in TTSS. There was a difference between the median weight of adenomas which were detected by 99m Tc-MIBI/ 123 I-Na (754 mg), and those which were detected by TTSS (1,195 mg). These results suggest that TTSS parathyroid scintigraphy could give way to 99m Tc-MIBI/ 123 I-Na parathyroid scintigraphy for improved detection of low-weight abnormal parathyroid glands. (author)

  9. Empolder and application of LiveWire program

    International Nuclear Information System (INIS)

    Zhang Bo; Li Jing; Wang Xiaoming

    2007-01-01

    LiveWire is a specific module of Netscape Web server to actualize CGI function; through LiveWire application program one can create dynamic web page on web site. This article introduces how to write LiveWire application code, have to compile, debug and manage LiveWire application programs, and how to apply LiveWire application program on Netscape Web server to create a dynamic web page. (authors)

  10. Wiring design for the control of electromagnetic interference (EMI)

    Science.gov (United States)

    Kopasakis, George

    1995-01-01

    Wiring design is only one important aspect of EMI control. Other important areas for EMI are: circuit design, filtering, grounding, bonding, shielding, lighting, electrostatic discharge (ESD), transient suppression, and electromagnetic pulse (EMP). Topics covered include: wire magnetic field emissions at low frequencies; wire radiated magnetic field emissions at frequencies; wire design guidelines for EMI control; wire design guidelines for EMI control; high frequency emissions from cables; and pulse frequency spectra.

  11. Effect of TMAH Etching Duration on the Formation of Silicon Nano wire Transistor Patterned by AFM Nano lithography

    International Nuclear Information System (INIS)

    Hutagalung, S.D.; Lew, K.C.

    2012-01-01

    Atomic force microscopy (AFM) lithography was applied to produce nano scale pattern for silicon nano wire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nano patterns. A conductive AFM tip was used to grow the silicon oxide nano patterns on silicon on insulator (SOI) wafer. The applied tip-sample voltage and writing speed were well controlled in order to form pre-designed silicon oxide nano wire transistor structures. The effect of tetra methyl ammonium hydroxide (TMAH) etching duration on the oxide covered silicon nano wire transistor structure has been investigated. A completed silicon nano wire transistor was obtained by removing the oxide layer via hydrofluoric acid etching process. The fabricated silicon nano wire transistor consists of a silicon nano wire that acts as a channel with source and drain pads. A lateral gate pad with a nano wire head was fabricated very close to the channel in the formation of transistor structures. (author)

  12. Evaluation of the biocompatibility of NiTi dental wires: a comparison of laboratory experiments and clinical conditions.

    Science.gov (United States)

    Toker, S M; Canadinc, D

    2014-07-01

    Effects of intraoral environment on the surface degradation of nickel-titanium (NiTi) shape memory alloy orthodontic wires was simulated through ex situ static immersion experiments in artificial saliva. The tested wires were compared to companion wires retrieved from patients in terms of chemical changes and formation of new structures on the surface. Results of the ex situ experiments revealed that the acidic erosion effective at the earlier stages of immersion led to the formation of new structures as the immersion period approached 30 days. Moreover, comparison of these results with the analysis of wires utilized in clinical treatment evidenced that ex situ experiments are reliable in terms predicting C-rich structure formation on the wire surfaces. However, the formation of C pileups at the contact sites of arch wires and brackets could not be simulated with the aid of static immersion experiments, warranting the simulation of the intraoral environment in terms of both chemical and physical conditions, including mechanical loading, when evaluating the biocompatibility of NiTi orthodontic arch wires. Copyright © 2014 Elsevier B.V. All rights reserved.

  13. Studies of implosion processes of nested tungsten wire-array Z-pinch

    International Nuclear Information System (INIS)

    Ning Cheng; Ding Ning; Liu Quan; Yang Zhenhua

    2006-01-01

    Nested wire-array is a kind of promising structured-load because it can improve the quality of Z-pinch plasma and enhance the radiation power of X-ray source. Based on the zero-dimensional model, the assumption of wire-array collision, and the criterion of optimized load (maximal load kinetic energy), optimization of the typical nested wire-array as a load of Z machine at Sandia Laboratory was carried out. It was shown that the load has been basically optimized. The Z-pinch process of the typical load was numerically studied by means of one-dimensional three-temperature radiation magneto-hydrodynamics (RMHD) code. The obtained results reproduce the dynamic process of the Z-pinch and show the implosion trajectory of nested wire-array and the transfer process of drive current between the inner and outer array. The experimental and computational X-ray pulse was compared, and it was suggested that the assumption of wire-array collision was reasonable in nested wire-array Z-pinch at least for the current level of Z machine. (authors)

  14. Electrochemically deposited BiTe-based nano wires for thermoelectric applications

    International Nuclear Information System (INIS)

    Inn-Khuan, N.; Kuan-Ying, K.; Che Zuraini Che Abdul Rahman; Nur Ubaidah Saidin; Suhaila Hani Ilias; Thye-Foo, C.

    2013-01-01

    Full-text: Nano structured materials systems such as thin-films and nano wires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nano wires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nano wires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltametry (LSV). Chemical compositions of the nano wires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nano wires indicated that while the Sb content in BiSbTe nano wires increased with more negative deposition potentials, the formation of Te 0 and Bi 2 Te 3 were favorable at more positive potentials. (author)

  15. Experimental Study on EHD Flow Transition in a Small Scale Wire-plate ESP

    Directory of Open Access Journals (Sweden)

    Wang Chuan

    2016-06-01

    Full Text Available The electrohydrodynamic (EHD flow induced by the corona discharge was experimentally investigated in an electrostatic precipitator (ESP. The ESP was a narrow horizontal Plexiglas box (1300 mm×60 mm×60 mm. The electrode set consisted of a single wire discharge electrode and two collecting aluminum plate electrodes. Particle Image Velocimetry (PIV method was used to visualize the EHD flow characteristics inside the ESP seeded with fine oil droplets. The influence of applied voltage (from 8 kV to 10 kV and primary gas flow (0.15 m/s, 0.2 m/s, 0.4 m/s on the EHD flow transition was elucidated through experimental analysis. The formation and transition of typical EHD flows from onset to the fully developed were described and explained. Experimental results showed that the EHD flow patterns change depends on the gas velocity and applied voltage. EHD flow starts with flow streamlines near collecting plates bending towards the wire electrode, forming two void regions. An oscillating jet forming the downstream appeared and moved towards the wire electrode as voltage increased. For higher velocities (≥0.2 m/s, the EHD transition became near wire phenomenon with a jet-like flow structure near the wire, forming a void region behind the wire and expanding as voltage increased. Fully developed EHD secondary flow in the form of counter-rotating vortices appeared upstream with high applied voltage.

  16. Microstructure and strengthening mechanisms in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Godfrey, Andy; Huang, Xiaoxu

    2011-01-01

    Strengthening mechanisms and strength–structure relationships have been analyzed in a cold-drawn pearlitic steel with a structural scale in the nanometer range and a flow stress of about 3.5GPa. The wires have been drawn up to a strain of 3.7 and the structures analyzed and quantified...... by transmission electron microscopy and high resolution electron microscopy. The mechanical properties have been determined by tensile testing. It is found that the interlamellar spacing and the thickness of the cementite lamellae are reduced in accordance with the changes in wire diameter up to a strain of 2...... at the ferrite/cementite interface. Three strengthening mechanisms have been analyzed: (i) boundary strengthening, (ii) dislocation strengthening and (iii) solid solution hardening. The individual and combined contributions, based on an assumption of linear additivity, of these mechanisms to the wire strength...

  17. Semiconductor Nano wires and Nano tubes: From Fundamentals to Diverse Applications

    International Nuclear Information System (INIS)

    Xiong, Q.; Grimes, C.A.; Zacharias, M.; Morral, A.F.; Hiruma, K.; Shen, G.

    2012-01-01

    Research in the field of semiconductor nano wires (SNWs) and nano tubes has been progressing into a mature subject with several highly interdisciplinary sub areas such as nano electronics, nano photonics, nano composites, bio sensing, optoelectronics, and solar cells. SNWs represent a unique system with novel properties associated to their one-dimensional (1D) structures. The fundamental physics concerning the formation of discrete 1D subbands, coulomb blockade effects, ballistic transport, and many-body phenomena in 1D nano wires and nano tubes provide a strong platform to explore the various scientific aspects in these nano structures. A rich variety of preparation methods have already been developed for generating well-controlled 1D nano structures and from a broad range of materials. The present special issue focuses on the recent development in the mechanistic understanding of the synthesis, the studies on electrical/optical properties of nano wires and their applications in nano electronics, nano photonics, and solar-energy harvesting. In this special issue, we have several invited review articles and contributed papers that are addressing current status of the fundamental issues related to synthesis and the diverse applications of semiconducting nano wires and nano tubes. One of the papers reviews the progress of the top-down approach of developing silicon-based vertically aligned nano wires to explore novel device architectures and integration schemes for nano electronics and clean energy applications. Another paper reviews the recent developments and experimental evidences of probing the confined optical and acoustic phonon in nonpolar semiconducting (Si and Ge) nano wires using Raman spectroscopy. The paper by K. Hiruma et al. spotlights the III semiconductor nano wires and demonstrates selective-area metal organic vapor phase epitaxy grown GaAs/In(Al)GaAs and InP/InAs/InP nano wires with heterojunctions along their axial and radial directions. The paper

  18. Dampak Biaya Laboratorium Terhadap Kesenjangan Tarif INA-CBGs dan Biaya Riil Diagnosis Leukemia

    Directory of Open Access Journals (Sweden)

    Diah Indriani

    2013-05-01

    Full Text Available Selama penerapan Diagnosis Related Group di Rumah Sakit Umum Pusat (RSUP Dr. Sardjito, terjadi kesenjangan tarif biaya riil pelayanan kesehatan dengan tarif Indonesia Case Base Groups (INA-CBGs. Penyebab terbesar kesenjangan tarif tersebut adalah pelayanan obat dan penggunaan sumber daya laboratorium yang tidak efisien. Biaya pelayanan penunjang medis untuk pasien leukemia limfoblastik akut adalah sekitar 23,8% dari total biaya pelayanan kesehatan. Penelitian ini bertujuan untuk mengetahui tingkat efisiensi penggunan sumber daya laboratorium dan pengaruh terhadap kesenjangan tarif. Penelitian ini menganalisis semua rekam medis dan data biaya pelayanan laboratorium pasien leukemia limfoblastik akut tahun 2009 _ 2010 di RSUP Dr. Sardjito Yogyakarta. Pemeriksaan kimia klinik menunjukkan pola pasien yang semakin parah, proporsi biaya pemeriksaan kimia klinik semakin rendah. Kondisi ini juga terjadi pada pemeriksaan radiologi, urine dan tinja rutin. Sementara pada pemeriksaan hematologi, mikrobiologi, dan imunologi/serologi menunjukkan pola semakin parah pasien maka semakin tinggi proporsi biaya pemeriksaan. Analisis regresi menemukan pemeriksaan kimia klinik meliputi mikrobiologi darah, ureum, magnesium, creatine kinase MB (blood menyebabkan kesenjangan tarif semakin meningkat atau rumah sakit semakin dirugikan. Model regresi linier ini mempunyai nilai R2 sebesar 0,834 dengan nilai F = 84,475 (P < 0,05. Ketidakefisienan penggunaan sumber daya laboratorium pada pemeriksaan kimia klinik terdapat pada kelompok pasien tingkat keparahan ringan. Problems occurred during the implementation of Diagnosis Related Group in Sardjito Hospital Yogyakarta. There was gap price between the real cost of health care and Indonesia Case Base Groups (INA-CBGs cost. The cause of the gap price was drug delivery and use of laboratory resources inefficiently. Cost of medical support services for acute lymphoblactic leukemia patients about 23.8% of the total cost of health

  19. Strategic planning of INA-CORS development for public service and tectonic deformation study

    Science.gov (United States)

    Syetiawan, Agung; Gaol, Yustisi Ardhitasari Lumban; Safi'i, Ayu Nur

    2017-07-01

    GPS technology can be applied for surveying, mapping and research purposes. The simplicity of GPS technology for positioning make it become the first choice for survey compared with another positioning method. GPS can measure a position with various accuracy level based on the measurement method. In order to facilitate the GPS positioning, many organizations are establishing permanent GPS station. National Geodetic Survey (NGS) called it as Continuously Operating Reference Stations (CORS). Those devices continuously collect and record GPS data to be used by users. CORS has been built by several government agencies for particular purposes and scattered throughout Indonesia. Geospatial Information Agency (BIG) as a geospatial information providers begin to compile a grand design of Indonesia CORS (INA-CORS) that can be used for public service such as Real Time Kinematic (RTK), RINEX data request, or post-processing service and for tectonic deformation study to determine the deformation models of Indonesia and to evaluate the national geospatial reference system. This study aims to review the ideal location to develop CORS network distribution. The method was used is to perform spatial analysis on the data distribution of BIG and BPN CORS overlayed with Seismotectonic Map of Indonesia and land cover. The ideal condition to be achieved is that CORS will be available on each radius of 50 km. The result showed that CORS distribution in Java and Nusa Tenggara are already tight while on Sumatra, Celebes and Moluccas are still need to be more tighten. Meanwhile, the development of CORS in Papua will encounter obstacles toward road access and networking. This analysis result can be used as consideration for determining the priorities of CORS development in Indonesia.

  20. Role of surface on the size-dependent mechanical properties of copper nano-wire under tensile load: A molecular dynamics simulation

    Science.gov (United States)

    Liu, Wei-Ting; Hsiao, Chun-I.; Hsu, Wen-Dung

    2014-01-01

    In this study we have used atomistic simulations to investigate the role of surface on the size-dependent mechanical properties of nano-wires. In particular, we have performed computational investigation on single crystal face-centered cubic copper nano-wires with diameters ranging from 2 to 20 nm. The wire axis for all the nano-wires are considered along the [0 0 1] direction. Characterization of the initial optimized structures revealed clear differences in interatomic spacing, stress, and potential energy in all the nano-wires. The mechanical properties with respect to wire diameter are evaluated by applying tension along the [0 0 1] direction until yielding. We have discussed the stress-strain relationships, Young's modulus, and the variation in potential energy from surface to the center of the wire for all the cases. Our results indicate that the mechanical response (including yield strain, Young's modulus, and resilience) is directly related to the proportion of surface to bulk type atoms present in each nano-wire. Thus the size-dependent mechanical properties of single crystal copper nano-wire within elastic region are attributed to the surface to volume ratio (surface effect). Using the calculated response, we have formulated a mathematical relationship, which predicts the nonlinear correlation between the mechanical properties and the diameter of the wire.