WorldWideScience

Sample records for inas wire structures

  1. Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

    Science.gov (United States)

    Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

    2005-06-01

    In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

  2. Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization

    OpenAIRE

    Lamy , Jean-Michel; Levallois , Christophe; Nakkar , Abdulhadi; Caroff , Philippe; Paranthoen , Cyril; Dehaese , Olivier; Le Corre , Alain; Ramdane , Abderrahim; Loualiche , Slimane

    2006-01-01

    International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is...

  3. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    Energy Technology Data Exchange (ETDEWEB)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S. [UMR C6082 FOTON - INSA de Rennes, 20 Avenue des Buttes de Coesmes, 35043 Rennes (France); Ramdane, A. [Laboratoire de Photonique et Nanostructures, CNRS UPR20, Route de Nozay, 91460 Marcoussis (France)

    2007-06-15

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 {mu}m at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 {mu}m strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    International Nuclear Information System (INIS)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S.; Ramdane, A.

    2007-01-01

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 μm at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 μm strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

    International Nuclear Information System (INIS)

    Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

    2006-01-01

    Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

  6. Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

    NARCIS (Netherlands)

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Dagli, N.; Fiore, A.

    2007-01-01

    The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.

  7. Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire

    International Nuclear Information System (INIS)

    Saravanan, S.; John Peter, A.; Lee, Chang Woo

    2014-01-01

    Excitons confined in an InAs 1−x P x /InP (x=0.2) quantum well wire are studied in the presence of magnetic field strength. Numerical calculations are carried out using variational approach within the single band effective mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is investigated in the influence of magnetic field strength taking into account the geometrical confinement effect. The magnetic field induced optical band as a function of wire radius is investigated in the InAs 0.8 P 0.2 /InP quantum well wire. The valence-band anisotropy is included in our theoretical model by employing different hole masses in different spatial directions. The optical gain as a function of incident photon energy is computed in the presence of magnetic field strength. The corresponding 1.55 μm wavelength is achieved for 40 Å InAs 0.8 P 0.2 /InP quantum well wire. We hope that the results could be used for the potential applications in fiber optic communications. -- Highlights: • Magnetic field induced excitons confined in a InAs 1−x P x /InP (x=0.2) quantum well wire are studied. • The compressive strain is included throughout the calculations. • The energy difference of the ground and the first excited state is investigated in the presence of magnetic field strength. • The magnetic field induced optical band with the geometrical confinement is studied. • The optical gain with the photon energy is computed in the presence of magnetic field strength

  8. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  9. Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

    Science.gov (United States)

    Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

    2018-09-01

    We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

  10. Energy Band Structure Studies Of Zinc-Blende GaAs and InAs ...

    African Journals Online (AJOL)

    A self-consistent calculation of the structural and electronic properties of zinc blende GaAs and InAs has been carried out. The calculations were done using the full potential-linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT). The exchange-correlation energy used is the ...

  11. InAs quantum wires on InP substrate for VCSEL applications

    OpenAIRE

    Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

    2008-01-01

    International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

  12. Electromagnetic Behaviour of Metallic Wire Structures

    CERN Document Server

    Chui, S T

    2013-01-01

    Despite the recent development and interest in the photonics of metallic wire structures, the relatively simple concepts and physics often remain obscured or poorly explained to those who do not specialize in the field. Electromagnetic Behaviour of Metallic Wire Structures provides a clear and coherent guide to understanding these phenomena without excessive numerical calculations.   Including both background material and detailed derivations of the various different formulae applied, Electromagnetic Behaviour of Metallic Wire Structures describes how to extend basic circuit theory relating to voltages, currents, and resistances of metallic wire networks to include situations where the currents are no longer spatially uniform along the wire. This lays a foundation for a deeper understanding of the many new phenomena observed in meta-electromagnetic materials.   Examples of applications are included to support this new approach making Electromagnetic Behaviour of Metallic Wire Structures a comprehensive and ...

  13. t matrix of metallic wire structures

    International Nuclear Information System (INIS)

    Zhan, T. R.; Chui, S. T.

    2014-01-01

    To study the electromagnetic resonance and scattering properties of complex structures of which metallic wire structures are constituents within multiple scattering theory, the t matrix of individual structures is needed. We have recently developed a rigorous and numerically efficient equivalent circuit theory in which retardation effects are taken into account for metallic wire structures. Here, we show how the t matrix can be calculated analytically within this theory. We illustrate our method with the example of split ring resonators. The density of states and cross sections for scattering and absorption are calculated, which are shown to be remarkably enhanced at resonant frequencies. The t matrix serves as the basic building block to evaluate the interaction of wire structures within the framework of multiple scattering theory. This will open the door to efficient design and optimization of assembly of wire structures

  14. The Crystal structure of InAs nanorods grown onto Si[111] substrate

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-07-01

    Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

  15. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  16. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    International Nuclear Information System (INIS)

    Eassa, N.; Murape, D.M.; Betz, R.; Neethling, J.H.; Venter, A.; Botha, J.R.

    2012-01-01

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H 2 O, Br–methanol and I–ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  17. Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy

    International Nuclear Information System (INIS)

    Noda, Takeshi; Mano, Takaaki

    2008-01-01

    An InAs ring structure accompanying the formation of quantum dots (QDs) was fabricated on (1 0 0)GaAs using droplet epitaxy. The QDs were located in the vicinity of the ring, due to the diffusion of In atoms from the In droplets. In addition, the dots were found to have distributed elliptically and preferentially along the [0 1 1] direction, implying that In itself prefers to diffuse along the [0 1 1] direction, which is the opposite of the favorable diffusion orientation of group III atoms on (1 0 0)GaAs under a commonly used As-stabilized growth condition. This is the first observation of a ring structure accompanying the formation of quantum dots in droplet epitaxy

  18. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

    International Nuclear Information System (INIS)

    Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

    2004-01-01

    We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition

  19. STRUCTURE AND CHARACTERISTICS OF PATENTED HIGH-CARBON WIRE

    Directory of Open Access Journals (Sweden)

    A. Ju. Borisenko

    2011-01-01

    Full Text Available The influence of bainite structure on mechanical characteristics of wire of steel 80 after patenting is studied. The quantity and structure state of bainite, providing high complex of mechanical characteristics of high-carbon wire, is determined.

  20. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    International Nuclear Information System (INIS)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  1. Electronic conductance of quantum wire with serial periodic potential structures

    International Nuclear Information System (INIS)

    Fayad, Hisham M.; Shabat, Mohammed M.; Abdus Salam International Centre for Theoretical Physics, Trieste

    2000-08-01

    A theory based on the total transfer matrix is presented to investigate the electronic conductance in a quantum wire with serial periodic potentials. We apply the formalism in computation of the electronic conductance in a wire with different physical parameters of the wire structure. The numerical results could be used in designing some future quantum electronic devices. (author)

  2. Band structure dynamics in indium wires

    Science.gov (United States)

    Chávez-Cervantes, M.; Krause, R.; Aeschlimann, S.; Gierz, I.

    2018-05-01

    One-dimensional indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below ˜100 K due to the formation of a charge density wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting in a light-induced insulator-to-metal phase transition. The current understanding of this transition remains incomplete, requiring measurements of the transient electronic structure to complement previous investigations of the lattice dynamics. Time- and angle-resolved photoemission spectroscopy with extreme ultraviolet radiation is applied to this end. We find that the transition from the insulating to the metallic band structure occurs within ˜660 fs, which is a fraction of the amplitude mode period. The long lifetime of the transient state (>100 ps) is attributed to trapping in a metastable state in accordance with previous work.

  3. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-01-01

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

  4. Hierarchical structures in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Godfrey, Andrew; Hansen, Niels

    2013-01-01

    The microstructure and crystallography of drawn pearlitic steel wires have been quantified by a number of electron microscopy techniques including scanning electron microscopy, transmission electron microscopy, electron backscatter diffraction and nanobeam diffraction, with focus on the change...... in the structure and crystallography when a randomly oriented cementite structure in a patented wire during wire drawing is transformed into a lamellar structure parallel to the drawing axis. Changes in the interlamellar spacing and in the misorientation angle along and across the ferrite lamellae show significant...... through-diameter variations in wires drawn to large strains P 1.5. The structural evolution is hierarchical as the structural variations have their cause in a different macroscopic orientation of the cementite in the initial (patented) structure with respect to the wire axis. The through...

  5. Hierarchical structures in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Godfrey, Andrew; Hansen, Niels

    2013-01-01

    The microstructure and crystallography of drawn pearlitic steel wires have been quantified by a number of electron microscopy techniques including scanning electron microscopy, transmission electron microscopy, electron backscatter diffraction and nanobeam diffraction, with focus on the change...... in the structure and crystallography when a randomly oriented cementite structure in a patented wire during wire drawing is transformed into a lamellar structure parallel to the drawing axis. Changes in the interlamellar spacing and in the misorientation angle along and across the ferrite lamellae show significant...... through-diameter variations in wires drawn to large strains ⩾ 1.5. The structural evolution is hierarchical as the structural variations have their cause in a different macroscopic orientation of the cementite in the initial (patented) structure with respect to the wire axis. The through...

  6. Hybridized plasmon in an asymmetric cut-wire-pair structure

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Nguyen Thanh [Vietnamese Military Academy of Science and Technology, Hanoi (Viet Nam); Hanyang University, Seoul (Korea, Republic of); Rhee, Joo Yull [Sungkyunkwan University, Suwon (Korea, Republic of); Park, Jin Woo; Lee, Young Pak [Hanyang University, Seoul (Korea, Republic of)

    2010-12-15

    In this report, we discuss an electromagnetic analog of the molecular-orbital theory for metamaterial structures. We show that the electromagnetic responses of a metamagnetic structure consisting of paired cut-wires can be well understood by using the plasmon-hybridization mechanism. The simulated transmission spectra of the asymmetric cut-wire-pair structure, which were obtained utilizing the transfer-matrix method, strongly support our suggestion.

  7. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    DEFF Research Database (Denmark)

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

    2011-01-01

    The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende......, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers...

  8. Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure

    International Nuclear Information System (INIS)

    Park, C.Y.; Park, K.W.; Kim, J.M.; Lee, Y.T.

    2009-01-01

    Multiple InAs/GaAs self-assembled quantum dots (QDs) with vertically stacked structure are grown by molecular beam epitaxy and the effects of GaAs interlayer thickness variation on optical properties are studied. The growth conditions are optimized by in-situ RHEED, AFM, and PL measurement. The five InAs QD layers are embedded in GaAs and Al0.3Ga0.7As layer. The PL intensity is increased with increasing GaAs interlayer thickness. The thin GaAs interlayer has strain field, the strain-induced intermixing of indium atoms in the InAs QDs (blue-shift) can overcompensate for the effect on the increased QD size (red-shift) (H. Heidemeyer et al. Appl. Phys. Lett. 80, 1544 (2002); T. Nakaoka et al. J. Appl. Phys. Lett. 96, 150 (2004)[1, 2], respectively). For the interlayer thickness larger than about 7 nm, the blue-shifts are correlated to the dominant high-energy excited state transitions due to the successive state filling of the ground and higher excited states in the QDs. The energy separation of double PL peaks, originated from two different excited states, was kept at around 50 meV at room temperature. A possible mechanism concerning this phenomenon is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

    NARCIS (Netherlands)

    Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

    1995-01-01

    The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

  10. Structural and phase studies of stainless wire after electroplastic drawing

    International Nuclear Information System (INIS)

    Troitskij, O.A.; Baldokhin, Yu.V.; Kir'yanchev, N.E.; Ryzhkov, V.G.; Kalugin, V.D.; Sokolov, N.V.; Klekovkin, A.A.; Klevtsur, S.A.

    1983-01-01

    Structural and phase properties of the 12Kh18N10T steel wire are studied after usual and electroplastic drawing from 0.40 up to 0.11 mm with 18-22% reduction per pass with passing 250 A/mm 2 electric current. The earlier made observation on a sharp decrease in content of deformation-induced martensite of α-phase takes place in the wire from stainless metastable austenitic steel as a result of electroplastic drawing. Distribution of the remained α-phase by the wire cross section is established

  11. Structure of gold monoatomic wires connected to two electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zoubkoff, Remi [Centre de Recherche en Matiere Condensee et Nanosciences, CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9 (France)]. E-mail: zoubkoff@crmcn.univ-mrs.fr; Vega, L. de la [Departamento de Fisica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Martin-Rodero, A. [Departamento de Fisica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Levy Yeyati, A. [Departamento de Fisica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Saul, Andres [Centre de Recherche en Matiere Condensee et Nanosciences, CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9 (France)

    2007-09-01

    In this work, we present calculations concerning the stability of infinite monoatomic Au wires and finite Au wires between electrodes. For the systems with the electrodes, that we represent by FCC slabs with (0 0 1) surfaces, the total energy calculations have been performed with a spd non-orthogonal tight-binding Hamiltonian. For the infinite wires, the calculations were also compared to semi-empirical and first principle ones. For the infinite wires and small enough inter-atomic distances, we find that a zig-zag structure is most stable than the linear one, in agreement with previous calculations. For the system between electrodes, one gets an almost concave or a symmetric broken edges structure depending on the inter-atomic distance.

  12. Hopping mixed hybrid excitations in multiple composite quantum wire structures

    International Nuclear Information System (INIS)

    Nguyen Ba An; Tran Thai Hoa

    1995-10-01

    A structure consisting of N pairs of inorganic semiconductor and organic quantum wires is considered theoretically. In such an isolated pair of wires, while the intrawire coupling forms Wannier-Mott exciton in an inorganic semiconductor quantum wire and Frenkel exciton in an organic one, the interwire coupling gives rise to hybrid excitons residing within the pair. When N pairs of wires are packed together 2N new mixed hybrid modes appear that are the true elementary excitations and can hop throughout the whole structure. Energies and wave functions of such hopping mixed hybrid excitations are derived analytically in detail accounting for the global interwire coupling and the different polarization configurations. (author). 19 refs

  13. Vibrating wire apparatus for periodic magnetic structure measurement

    International Nuclear Information System (INIS)

    Temnykh, A.B.

    2003-01-01

    Devices with periodic magnetic structures such as wigglers and undulators are often key elements in synchrotron radiation sources. In applications where the coherence of the emitted radiation is important, magnetic field errors distorting the periodicity of the field can significantly reduce the performance of the devices. Thus, the measurement, localization, and correction of the field errors can be a critical issue. This article presents a new method for magnetic field measurements in periodic magnetic structures. The method uses a vibrating taut wire passing through the magnetic structure, and it involves measurements of the amplitudes and phases of the standing waves excited on the wire by the Lorentz force between an AC current in the wire and the surrounding magnetic field. For certain arrangements of the wire, vibrations in the wire will be excited by only non-periodic magnetic field component, i.e., by the error field. By measuring the phase and amplitude of these waves, one can reconstruct the error field distribution and then correct it. The method was tested on a permanent magnet wiggler with 19.8 cm period and a peak field of ∼7000G. It demonstrated ∼0.6G RMS sensitivity, δB rms /B rms ∼1.2x10 -4 and spatial resolution sufficient to identify poles generating the field error. Good agreement was found between field error measurements obtained with the vibrating wire method and with traditional Hall probe field mapping

  14. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

    Science.gov (United States)

    Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

    2018-06-01

    InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

  15. Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 ??sing an Asymmetric InA1GaAs/InGaAsP Structure

    Science.gov (United States)

    Vang, T. A.; Davis, L.; Keo, S.; Forouhar, S. F.

    1996-01-01

    Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 ??y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.

  16. GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

    International Nuclear Information System (INIS)

    Nevedomskii, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2009-01-01

    Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

  17. Development of a Simple Structured Artificial Muscle Using SMA Wire

    International Nuclear Information System (INIS)

    Ibuki, Ryuta; Maruyama, Shigenao; Komiya, Atsuki

    2006-01-01

    Artificial heart muscle using SMA wire is developed to assist weaken heartbeat. Simple structure design was adopted for large output force, large displacement and rapid cyclic motion of the actuator. The actuator was designed and fabricated from the viewpoint of heat transfer. Moving performance of the actuator was experimentally measured under 10N of loading condition. Under the maximum efficiency condition, the actuator shows cyclic motion with 1mm of displacement and time period of about 2 seconds in one cycle

  18. Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

    International Nuclear Information System (INIS)

    Espinola, J L Casas; Dybic, M; Ostapenko, S; Torchynska, T V; Polupan, G

    2007-01-01

    Ground and multi excited state photoluminescence, as well as its temperature dependence, in InAs quantum dots embedded in symmetric In x Ga 1-x As/GaAs (x = 0.15) quantum wells (DWELL) have been investigated. The solution of the set of rate equations for exciton dynamics (relaxation into QWs or QDs and thermal escape) solved by us earlier is used for analysis the variety of thermal activation energies of photoluminescence thermal quenching for ground and multi excited states of InAs QDs. The obtained solutions were used at the discussion of the variety of activation energies of PL thermal quenching in InAs QDs. It is revealed three different regimes of thermally activated quenching of the QD PL intensity. These three regimes were attributed to thermal escape of excitons: i) from the high energy excited states of InAs QDs into the WL with follows exciton re-localization; ii) from the In x Ga 1-x As QWs into the GaAs barrier and iii) from the WL into the GaAs barrier with their subsequent nonradiative recombination in GaAs barrier

  19. Structural Disorder in Colloidal InAs and CdSe Nanocrystals Observed by X-Ray Absorption Near-Edge Spectroscopy

    International Nuclear Information System (INIS)

    Hamad, K.S.; Hamad, K.S.; Roth, R.; Roth, R.; Rockenberger, J.; Rockenberger, J.; Alivisatos, A.P.; Alivisatos, A.P.; Buuren, T. van

    1999-01-01

    We report the observation of size dependent structural disorder by x-ray absorption near-edge spectroscopy (XANES) in InAs and CdSe nanocrystals 17 - 80 Angstrom in diameter. XANES of the In and Cd M 4,5 edges yields features that are sharp for the bulk solid but broaden considerably as the size of the particle decreases. FEFF7 multiple-scattering simulations reproduce the size dependent broadening of the spectra if a bulklike surface reconstruction of a spherical nanocrystal model is included. This illustrates that XANES is sensitive to the structure of the entire nanocrystal including the surface. copyright 1999 The American Physical Society

  20. Electronic fine structure and recombination dynamics in single InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Seguin, R.

    2008-01-28

    In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

  1. Electronic fine structure and recombination dynamics in single InAs quantum dots

    International Nuclear Information System (INIS)

    Seguin, R.

    2008-01-01

    In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

  2. Structural evolution and drawability in laser dieless drawing of fine nickel wires

    International Nuclear Information System (INIS)

    Li Yonggang; Quick, Nathaniel R.; Kar, Aravinda

    2003-01-01

    Drawability of Nickel 200 wires in laser dieless drawing was investigated. Influencing factors under consideration include the laser power, the heat-treatment state (as-drawn or annealed), and the initial wire diameter. Microstructural evolutions in laser dieless drawing were studied by scanning electron microscopy (SEM). The wires exhibit optimal drawability at an intermediate laser power range corresponding to the wire temperature in the range of 1000-1300 K. The as-drawn precursor wire has better drawability than that of the annealed wire. The drawability decreases as the precursor wire diameter deceases. Microcrystalline structures were found in nickel 200 wires after being laser-drawn from as-drawn precursor wires. These experimental observations are explained using the concepts of dynamic recovery and recrystallization

  3. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  4. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  5. Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

  6. Electrochemically synthesized Si nano wire arrays and thermoelectric nano structures

    International Nuclear Information System (INIS)

    Khuan, N.I.; Ying, K.K.; Nur Ubaidah Saidin; Foo, C.T.

    2012-01-01

    Thermoelectric nano structures hold great promise for capturing and directly converting into electricity some vast amount of low-grade waste heats now being lost to the environment (for example from nuclear power plant, fossil fuel burning, automotive and household appliances). In this study, large-area vertically-aligned silicon nano wire (SiNW) arrays were synthesized in an aqueous solution containing AgNO 3 and HF on p-type Si (100) substrate by self-selective electroless etching process. The etching conditions were systematically varied in order to achieve different stages of nano wire formation. Diameters of the SiNWs obtained varied from approximately 50 to 200 nm and their lengths ranged from several to a few tens of μm. Te/ Bi 2 Te 3 -Si thermoelectric core-shell nano structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO 2 + and Bi 3+ / HTeO 2 + ions. The reactions were basically a nano-electrochemical process due to the difference in redox potentials between the materials. the surface-modified SiNWs of core-shell structures had roughened surface morphologies and therefore, higher surface-t-bulk ratios compared to unmodified SiNWs. They have potential applications in sensors, photovoltaic and thermoelectric nano devices. Growth study on the SiNWs and core-shell nano structures produced is presented using various microscopy, diffraction and probe-based techniques for microstructural, morphological and chemical characterizations. (Author)

  7. Elastic properties and electron transport in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  8. X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs[ anti 1 anti 1 anti 1]{sub B}

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Jens; Gottschalch, Volker; Wagner, Gerald [Universitaet Leipzig, Halbleiterchemie, Leipzig (Germany); Pietsch, Ullrich; Davydok, Anton; Biermanns, Andreas [Universitaet Siegen, Festkoerperphysik, Siegen (Germany); Grenzer, Joerg [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany)

    2009-09-15

    The heteroepitaxial growth process of InAs nanowires (NW) on GaAs[ anti 1 anti 1 anti 1]{sub B} substrate was investigated by X-ray grazing-incidence diffraction using synchrotron radiation. For crystal growth we applied the vapor-liquid-solid (VLS) growth mechanism via gold seeds. The general sample structure was extracted from various electron microscopic and X-ray diffraction experiments. We found a closed Ga{sub x}In{sub 1-x} As graduated alloy layer at the substrate to NW interface which was formed in the initial stage of VLS growth with a Au-Ga-In liquid alloy. With ongoing growth time a transition from this VLS layer growth to the conventional VLS NW growth was observed. The structural properties of both VLS grown crystal types were examined. Furthermore, we discuss the VLS layer growth process. (orig.)

  9. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ke; Ma, Wenquan, E-mail: wqma@semi.ac.cn; Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao [Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)

    2015-07-27

    We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

  10. The influence of drawing speed on structure changes in high carbon steel wires

    Directory of Open Access Journals (Sweden)

    M. Suliga

    2015-01-01

    Full Text Available In the paper the influence of the drawing speed on structure changes has been assessed. The Scanning Electron Microscope investigation confirmed that for wires drawn with high total draft, exceeding 80 %, makes it impossible to clearly assess the impact of drawing technology on structural changes in the drawn wires. Thus, to assess the structural changes necessary to apply quantitative methods. On the basis of examination of the wire structure by measuring of electrical resistance, the structure changes in drawn wires has been determined. It has been shown that the increase of drawing speed, especially above 15 m/s, causes an increase in structure defect, with a decline in platelet orientation of cementite in drawn wires.

  11. Fabrication of a smart air intake structure using shape memory alloy wire embedded composite

    International Nuclear Information System (INIS)

    Jung, Beom-Seok; Kim, Min-Saeng; Kim, Ji-Soo; Kim, Yun-Mi; Lee, Woo-Yong; Ahn, Sung-Hoon

    2010-01-01

    Shape memory alloys (SMAs) have been actively studied in many fields utilizing their high energy density. Applying SMA wire-embedded composite to aerospace structures, such as air intake of jet engines and guided missiles, is attracting significant attention because it could generate a comparatively large actuating force. In this research, a scaled structure of SMA wire-embedded composite was fabricated for the air intake of aircraft. The structure was composed of several prestrained Nitinol (Ni-Ti) SMA wires embedded in intersection -shape glass fabric reinforced plastic (GFRP), and it was cured at room temperature for 72 h. The SMA wire-embedded GFRP could be actuated by applying electric current through the embedded SMA wires. The activation angle generated from the composite structure was large enough to make a smart air intake structure.

  12. A high extinction ratio THz polarizer fabricated by double-bilayer wire grid structure

    Science.gov (United States)

    Lu, Bin; Wang, Haitao; Shen, Jun; Yang, Jun; Mao, Hongyan; Xia, Liangping; Zhang, Weiguo; Wang, Guodong; Peng, Xiao-Yu; Wang, Deqiang

    2016-02-01

    We designed a new style of broadband terahertz (THz) polarizer with double-bilayer wire grid structure by fabricating them on both sides of silicon substrate. This THz polarizer shows a high average extinction ratio of 60dB in 0.5 to 2.0 THz frequency range and the maximum of 87 dB at 1.06 THz, which is much higher than that of conventional monolayer wire grid polarizers and single-bilayer wire grid ones.

  13. Evaluation of mechanical properties in metal wire mesh supported selective catalytic reduction (SCR) catalyst structures

    Science.gov (United States)

    Rajath, S.; Siddaraju, C.; Nandakishora, Y.; Roy, Sukumar

    2018-04-01

    The objective of this research is to evaluate certain specific mechanical properties of certain stainless steel wire mesh supported Selective catalytic reduction catalysts structures wherein the physical properties of the metal wire mesh and also its surface treatments played vital role thereby influencing the mechanical properties. As the adhesion between the stainless steel wire mesh and the catalyst material determines the bond strength and the erosion resistance of catalyst structures, surface modifications of the metal- wire mesh structure in order to facilitate the interface bonding is therefore very important to realize enhanced level of mechanical properties. One way to enhance such adhesion properties, the stainless steel wire mesh is treated with the various acids, i.e., chromic acid, phosphoric acid including certain mineral acids and combination of all those in various molar ratios that could generate surface active groups on metal surface that promotes good interface structure between the metal- wire mesh and metal oxide-based catalyst material and then the stainless steel wire mesh is dipped in the glass powder slurry containing some amount of organic binder. As a result of which the said catalyst material adheres to the metal-wire mesh surface more effectively that improves the erosion profile of supported catalysts structure including bond strength.

  14. Effect of thermomechanical conditions of deformation on structure and properties of tungsten wire

    International Nuclear Information System (INIS)

    Pavlov, I.M.; Ushakov, E.V.; Karavajtsev, V.I.; Drobysheva, E.K.; Tiraspol'skij, V.I.; Zelentsova, N.M.; Gruzdov, V.V.

    1983-01-01

    The purpose of the investigation is to specify the relation between conditions of plastic deformation of non-slacked tungsten, structure and properties of rods and wire. Planning multifactor experiments is chosen as the basic method for investigation. It is shown that rationai choice of plastic working conditions permits to reduce the tendency to lamination of tungsten wire. Growth of wire ductility is followed by decrease of its residual electroresistance. Rapid porocedure of return due to precipitation of dissolved admixtures is the main reason for improving plastic properties of the wire

  15. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    International Nuclear Information System (INIS)

    Travelli, A.

    1988-01-01

    A nuclear fuel-containing plate structure for a nuclear reactor is described; such structure comprising a pair of malleable metallic non-fissionable matrix plates having confronting surfaces which are pressure bonded together and fully united to form a bonded surface, and elongated malleable wire-like fissionable fuel members separately confined and fully enclosed between the matrix plates along the interface to afford a high fuel density as well as structural integrity and effective retention of fission products. The plates have separate recesses formed in the confronting surfaces for closely receiving the wire-like fissionable fuel members. The wire-like fissionable fuel members are made of a maleable uranium alloy capable of being formed into elongated wire-like members and capable of withstanding pressure bonding. The wire-like fissionable fuel members are completely separated and isolated by fully united portions of the interface

  16. The importance of carbon nanotube wire density, structural uniformity, and purity for fabricating homogeneous carbon nanotube-copper wire composites by copper electrodeposition

    Science.gov (United States)

    Sundaram, Rajyashree; Yamada, Takeo; Hata, Kenji; Sekiguchi, Atsuko

    2018-04-01

    We present the influence of density, structural regularity, and purity of carbon nanotube wires (CNTWs) used as Cu electrodeposition templates on fabricating homogeneous high-electrical performance CNT-Cu wires lighter than Cu. We show that low-density CNTWs (wires) with regular macro- and microstructures and high CNT content (>90 wt %) are essential for making homogeneous CNT-Cu wires. These homogeneous CNT-Cu wires show a continuous Cu matrix with evenly mixed nanotubes of high volume fractions (˜45 vol %) throughout the wire-length. Consequently, the composite wires show densities ˜5.1 g/cm3 (33% lower than Cu) and electrical conductivities ˜6.1 × 104 S/cm (>100 × CNTW conductivity). However, composite wires from templates with higher densities or structural inconsistencies are non-uniform with discontinuous Cu matrices and poor CNT/Cu mixing. These non-uniform CNT-Cu wires show conductivities 2-6 times lower than the homogeneous composite wires.

  17. The role of oxide structure on copper wire to the rubber adhesion

    Science.gov (United States)

    Su, Yea-Yang; Shemenski, Robert M.

    2000-07-01

    Most metals have an oxide layer on the surface. However, the structure of the oxide varies with the matrix composition, and depends upon the environmental conditions. A bronze coating, nominal composition of 98.5% Cu and balance of Sn, is applied to steel wire for reinforcing pneumatic tire beads and to provide adhesion to rubber. This work studied the influence of copper oxides on the bronze coating on adhesion during vulcanization. To emphasize the oxide structures, electrolytic tough pitch (ETP) copper wire was used instead of the traditional bronze-coated tire bead wire. Experimental results confirmed the hypothesis that cuprous oxide (Cu 2O) could significantly improve bonding between copper wire and rubber, and demonstrated that the interaction between rubber and oxide layer on wire is an electrochemical reaction.

  18. Hierarchical Structure and Strengthening Mechanisms in Pearlitic Steel Wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Hansen, Niels; Huang, Xiaoxu

    Microstructure evolution and strengthening mechanisms have been analyzed in a cold-drawn pearlitic steel wire (the strongest engineering materials in the world) with a nanostructure down to 10 nm and a flow stress up to 5.4 GPa. The interlamellar spacing and the cementite lamellae thickness...... are reduced during drawing in accordance with the change in wire diameter up to a strain of 2.5. At a higher strain enhanced thinning of cementite lamellae points to decomposition and carbon enrichment of the ferrite lamellae. Dislocations are stored as individual dislocations and in low angle boundaries...

  19. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    Science.gov (United States)

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  20. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

    International Nuclear Information System (INIS)

    Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

    2014-01-01

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

  1. PECULIARITIES OF FORMATION OF STRUCTURE AND PROPERTIES AT THERMO-MECHANICAL PROCESSING OF ROLLED WIRE OF NICKEL

    OpenAIRE

    V. A. Lutsenko

    2012-01-01

    There are results of researches of the mechanical properties and structure of the wire rod made of low-carbon nickel molybdenum steel after reduction to toughness thermomechanical treatment in the stream of high-speed wire mill.

  2. Observation of infrared absorption of InAs quantum dot structures in AlGaAs matrix toward high-efficiency solar cells

    Science.gov (United States)

    Yoshikawa, Hirofumi; Watanabe, Katsuyuki; Kotani, Teruhisa; Izumi, Makoto; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2018-06-01

    In accordance with the detailed balance limit model of single-intermediate-band solar cells (IBSCs), the optimum matrix bandgap and IB–conduction band (CB) energy gap are ∼1.9 and 0.7 eV, respectively. We present the room-temperature polarized infrared absorption of 20 stacked InAs quantum dot (QD) structures in the Al0.32Ga0.68As matrix with a bandgap of ∼1.9 eV for the design of high-efficiency IBSCs by using a multipass waveguide geometry. We find that the IB–CB absorption is almost independent of the light polarization, and estimate the magnitude of the absorption per QD layer to be ∼0.01%. We also find that the IB–CB absorption edge of QD structures with a wide-gap matrix is ∼0.41 eV. These results indicate that both the significant increase in the magnitude of IB–CB absorption and the lower energy of the IB state for the higher IB–CB energy gap are necessary toward the realization of high-efficiency IBSCs.

  3. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

    International Nuclear Information System (INIS)

    Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

    2005-01-01

    We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

  4. Identification of Ina proteins from Fusarium acuminatum

    Science.gov (United States)

    Scheel, Jan Frederik; Kunert, Anna Theresa; Pöschl, Ulrich; Fröhlich-Nowoisky, Janine

    2015-04-01

    Freezing of water above -36° C is based on ice nucleation activity (INA) mediated by ice nucleators (IN) which can be of various origins. Beside mineral IN, biological particles are a potentially important source of atmospheric IN. The best-known biological IN are common plant-associated bacteria. The IN activity of these bacteria is induced by a surface protein on the outer cell membrane, which is fully characterized. In contrast, much less is known about the nature of fungal IN. The fungal genus Fusarium is widely spread throughout the earth. It belongs to the Ascomycota and is one of the most severe fungal pathogens. It can affect a variety of organisms from plants to animals including humans. INA of Fusarium was already described about 30 years ago and INA of Fusarium as well as other fungal genera is assumed to be mediated by proteins or at least to contain a proteinaceous compound. Although many efforts were made the precise INA machinery of Fusarium and other fungal species including the proteins and their corresponding genes remain unidentified. In this study preparations from living fungal samples of F. acuminatum were fractionated by liquid chromatography and IN active fractions were identified by freezing assays. SDS-page and de novo sequencing by mass spectrometry were used to identify the primary structure of the protein. Preliminary results show that the INA protein of F. acuminatum is contained in the early size exclusion chromatography fractions indicating a high molecular size. Moreover we could identify a single protein band from IN active fractions at 130-145 kDa corresponding to sizes of IN proteins from bacterial species. To our knowledge this is for the first time an isolation of a single protein from in vivo samples, which can be assigned as IN active from Fusarium.

  5. A high extinction ratio THz polarizer fabricated by double-bilayer wire grid structure

    Directory of Open Access Journals (Sweden)

    Bin Lu

    2016-02-01

    Full Text Available We designed a new style of broadband terahertz (THz polarizer with double-bilayer wire grid structure by fabricating them on both sides of silicon substrate. This THz polarizer shows a high average extinction ratio of 60dB in 0.5 to 2.0 THz frequency range and the maximum of 87 dB at 1.06 THz, which is much higher than that of conventional monolayer wire grid polarizers and single-bilayer wire grid ones.

  6. Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    Takeshi Inaoka

    2012-12-01

    Full Text Available Adsorption on an n-type InAs surface often induces a gradual formation of a carrier-accumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES, Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP dispersion of the conduction band into the local-density-functional (LDF formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process. Accurate evaluation of the NP subband dispersion at each formation stage is indispensable in making a quantitative analysis of collective electronic excitations and transport properties in the subbands.

  7. Time synchronization of a wired sensor network for structural health monitoring

    International Nuclear Information System (INIS)

    Ishikawa, Ken-ichiro; Mita, Akira

    2008-01-01

    This paper introduces a time synchronization system for wired smart sensor networks to be applied to the structural health monitoring of gigantic structures. The jitter of sensor nodes in the wired network depends on the wire length between the origin and the destination of the time synchronization signals. The proposed system can theoretically achieve the accuracy to limit the jitter of sensors within 34 ns by adjusting the timing depending on the wire length, and experimentally showed the jitter of 190 m separation to be within 25 ns. The proposed system uses local area network (LAN) cables and does not require additional cabling for synchronization. Thus the proposed synchronization system can be embedded in the sensor network with minimal cost

  8. Control of core structure in MgB{sub 2} wire through tailoring boron powder

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, Minoru, E-mail: maeda.minoru70@nihon-u.ac.jp [Department of Physics, College of Science and Technology, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Uchiyama, Daisuke [Department of Physics, College of Science and Technology, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Hossain, Md Shahriar Al; Ma, Zongqing [Institute for Superconducting and Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Shahabuddin, Mohammed [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Kim, Jung Ho, E-mail: jhk@uow.edu.au [Institute for Superconducting and Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia)

    2015-07-05

    Highlights: • The typical void structure in the wire is obtained by using large-sized B powder. • In contrast, void alignment can be achieved by using fine B powder. • The sintering at lower temperatures improves the critical current density in fields. - Abstract: A common fabrication process for MgB{sub 2} wire, namely, the in situ powder-in-tube process, forms numerous voids within the wire core, and void formation cannot be completely avoided. The orientation is, however, known to be aligned more or less along the current-flow direction when ductile coarse magnesium powder is used as a precursor, and further tailoring approaches could open up the way to improving the transport critical current density. Herein, we have used boron powders with different particle sizes, in combination with the coarse magnesium powder, and evaluated their size effects on the phase composition, microstructure, and transport properties. A mixture of the coarse magnesium powder with large-sized boron powder in the wire core, after cold working and sintering, forms a granular morphology. In contrast, an aligned core appears during the reduction process for wire which is prepared by using fine boron powder. The sintering process, especially at a low temperature, where magnesium evaporation hardly occurs, yields an aligned structure, mainly consisting of MgB{sub 2} phase, along the wire direction. These findings demonstrate that the initial size of the starting materials is critical for the tailored structure.

  9. A wireless vibrating wire sensor node for continuous structural health monitoring

    International Nuclear Information System (INIS)

    Lee, H M; Park, H S; Kim, J M; Sho, K

    2010-01-01

    Vibrating wire sensors (VWS) are generally used for strain measurements of structures in buildings and civil infrastructures. In this paper, a wireless vibrating wire sensor node is developed which can measure resonance frequencies from vibrating wire sensors and can remotely communicate the frequencies by wireless. The wireless sensor node consists of a sensor module, which excites the vibrating wire and reads the resonance frequencies, a wireless communication module, which transmits the wire's resonance frequencies to the user or administrator, and a processor that controls the two modules. The wireless sensor node has the following characteristics: it has multiple channels to enable measurement of multiple vibrating wire sensors (up to four) using a single sensor node; it has a power-saving feature that enables operation for up to one year; and lastly, the wireless unit uses the 424 MHz UHF (ultra-high frequency) band with good diffraction that has an effect on minimizing the influence of impediments such as structural or nonstructural elements. The wireless sensor node is tested in terms of its measurement precision and its wireless communication performance. As a result, it is confirmed that the node enables the long-term structural health monitoring of buildings and infrastructures

  10. Branched ZnO wire structures for water collection inspired by cacti.

    Science.gov (United States)

    Heng, Xin; Xiang, Mingming; Lu, Zhihui; Luo, Cheng

    2014-06-11

    In this work, motivated by an approach used in a cactus to collect fog, we have developed an artificial water-collection structure. This structure includes a large ZnO wire and an array of small ZnO wires that are branched on the large wire. All these wires have conical shapes, whose diameters gradually increase from the tip to the root of a wire. Accordingly, a water drop that is condensed on the tip of each wire is driven to the root by a capillary force induced by this diameter gradient. The lengths of stem and branched wires in the synthesized structures are in the orders of 1 mm and 100 μm, respectively. These dimensions are, respectively, comparable to and larger than their counterparts in the case of a cactus. Two groups of tests were conducted at relative humidity of 100% to compare the amounts of water collected by artificial and cactus structures within specific time durations of 2 and 35 s, respectively. The amount of water collected by either type of structures was in the order of 0.01 μL. However, on average, what has been collected by the artificial structures was 1.4-5.0 times more than that harvested by the cactus ones. We further examined the mechanism that a cactus used to absorb a collected water drop into its stem. On the basis of the gained understanding, we developed a setup to successfully collect about 6 μL of water within 30 min.

  11. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    International Nuclear Information System (INIS)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.

    2007-01-01

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Intrinsic quantum dots in InAs nanowires

    International Nuclear Information System (INIS)

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  13. Pool boiling of water on nano-structured micro wires at sub-atmospheric conditions

    Science.gov (United States)

    Arya, Mahendra; Khandekar, Sameer; Pratap, Dheeraj; Ramakrishna, S. Anantha

    2016-09-01

    Past decades have seen active research in enhancement of boiling heat transfer by surface modifications. Favorable surface modifications are expected to enhance boiling efficiency. Several interrelated mechanisms such as capillarity, surface energy alteration, wettability, cavity geometry, wetting transitions, geometrical features of surface morphology, etc., are responsible for change in the boiling behavior of modified surfaces. Not much work is available on pool boiling at low pressures on microscale/nanoscale geometries; low pressure boiling is attractive in many applications wherein low operating temperatures are desired for a particular working fluid. In this background, an experimental setup was designed and developed to investigate the pool boiling performance of water on (a) plain aluminum micro wire (99.999 % pure) and, (b) nano-porous alumina structured aluminum micro wire, both having diameter of 250 µm, under sub-atmospheric pressure. Nano-structuring on the plain wire surface was achieved via anodization. Two samples, A and B of anodized wires, differing by the degree of anodization were tested. The heater length scale (wire diameter) was much smaller than the capillary length scale. Pool boiling characteristics of water were investigated at three different sub-atmospheric pressures of 73, 123 and 199 mbar (corresponding to T sat = 40, 50 and 60 °C). First, the boiling characteristics of plain wire were measured. It was noticed that at sub-atmospheric pressures, boiling heat transfer performance for plain wire was quite low due to the increased bubble sizes and low nucleation site density. Subsequently, boiling performance of nano-structured wires (both Sample A and Sample B) was compared with plain wire and it was noted that boiling heat transfer for the former was considerably enhanced as compared to the plain wire. This enhancement is attributed to increased nucleation site density, change in wettability and possibly due to enhanced pore scale

  14. Optical emission of InAs nanowires

    International Nuclear Information System (INIS)

    Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

    2012-01-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

  15. Optical emission of InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

    2012-09-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

  16. THE STRUCTURE ANALYTICAL RESEARCH OF POROUS PERMEABLE WIRE MATERIAL (in Russian

    Directory of Open Access Journals (Sweden)

    Andrzej JAKUBOWSKI

    2016-04-01

    Full Text Available The details of making technology of porous permeable material with use of wire are allowed to carry out the analytical research of structure and structural characteristics of wire winding body. Its permit for prognostication the final proper-ties of material, that is produced by the following deformation treatment (diameter reduction. Due to the regular orga-nized arrangement of wire, the coil of winding body is considered as a multispan continuous beam, but a contact of coils – as interaction of two cylinders. Possibility of exactly calculation of the contacts between coils is allowed to go over the single fragment displacements into deformation of whole winding body. During research of deformation processes in regards of winding body geometry and used wire mechanical properties, the structural characteristics of porous permea-ble wire material are expected. The optimal number of winding layers, eliminating the distortion of organized final struc-ture, is established. The material pressure–compactness relation is obtained in order to control the technological condi-tions of winding and drafting for guarantee the product required properties.

  17. Non-destructive X-ray examination of weft knitted wire structures

    Science.gov (United States)

    Obermann, M.; Ellouz, M.; Aumann, S.; Martens, Y.; Bartelt, P.; Klöcker, M.; Kordisch, T.; Ehrmann, A.; Weber, M. O.

    2016-07-01

    Conductive yarns or wires are often integrated in smart textiles to enable data or energy transmission. In woven fabrics, these conductive parts are fixed at defined positions and thus protected from external loads. Knitted fabrics, however, have relatively loose structures, resulting in higher impacts of possible mechanical forces on the individual yarns. Hence, metallic wires with smaller diameters in particular are prone to break when integrated in knitted fabrics. In a recent project, wires of various materials including copper, silver and nickel with diameters varying between 0.05 mm and 0.23 mm were knitted in combination with textile yarns. Hand flat knitting machines of appropriate gauges were used to produce different structures. On these samples, non-destructive examinations, using an industrial X-ray system Seifert x|cube (225 kV) equipped with a minifocus X-ray tube, were carried out, directly after knitting as well as after different mechanical treatments (tensile, burst, and washing tests). In this way, structural changes of the stitch geometry could be visualized before failure. In this paper, the loop geometries in the knitted fabrics are depicted depending on knitted structures, wire properties and the applied mechanical load. Consequently, it is shown which metallic wires and yarns are most suitable to be integrated into knitted smart textiles.

  18. Radar micro-Doppler of wind turbines : Simulation and analysis using rotating linear wire structures

    NARCIS (Netherlands)

    Krasnov, O.A.; Yarovoy, A.

    2015-01-01

    A simple electromagnetic model of wind-turbine's main structural elements as the linear wired structures is developed to simulate the temporal patterns of observed radar return Doppler spectra (micro-Doppler). Using the model, the micro-Doppler for different combinations of the turbines rotation

  19. Pressure-induced structural change of liquid InAs and the systematics of liquid III-V compounds

    International Nuclear Information System (INIS)

    Hattori, T.; Tsuji, K.; Miyata, Y.; Sugahara, T.; Shimojo, F.

    2007-01-01

    To understand the pressure-induced structural changes of liquid III-V compounds systematically, the pressure dependence of l-InAs was investigated using the synchrotron x-ray diffraction and an ab initio molecular-dynamics simulation (AIMD). The x-ray diffraction experiments revealed that the liquid changes its compression behavior from a nearly uniform type to a nonuniform one around 9 GPa. Corresponding to this change, the coordination number (China), which is maintained up to 9 GPa, markedly increases from 6.0 to 7.5. The AIMD simulation revealed that this change is related to the change in the pressure dependence of all three pair correlations. In particular, a marked change is observed in the As-As correlation; in the low-pressure region, the position of the first peak in g AsAs (r), r AsAs , increases while maintaining the CN AsAs , but in the high-pressure region, the r AsAs stops increasing and the CN AsAs begins to increase. The AIMD simulation also revealed that each partial structure of l-InAs is similar to that for the pure-element liquid with the same valence electron number. Upon compression, each partial structure approaches the respective one for a heavier element in the same group. These findings suggest that the structures of liquid compounds are locally controlled by the number of the valence electrons in each ion pair and that the change in each partial structure obeys the empirical rule that the high-pressure state resembles the ambient state of a heavier element in the same group. Comparing the pressure-induced structural change of l-InAs to those of other liquid III-V compounds (GaSb and InSb) has revealed that, although the high-pressure behaviors of these three liquids are apparently different, their structural changes are systematically understood by a common structural sequence. This systematics originates from the same effect on each partial structure between increasing the atomic number and the pressurization

  20. Structural Parameters and Strengthening Mechanisms in Cold-Drawn Pearlitic Steel Wires

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Godfrey, Andy; Huang, Xiaoxu

    2012-01-01

    Pearlitic steel wires have a nanoscale structure and a strength which can reach 5 GPa. In order to investigate strengthening mechanisms, structural parameters including interlamellar spacing, dislocation density and cementite decomposition, have been analyzed by transmission electron microscopy...... and high resolution electron microscopy in wires cold drawn up to a strain of 3.7. Three strengthening mechanisms, namely boundary strengthening, dislocation strengthening and solid solution hardening have been analyzed and good agreement has been found between the measured flow stress and the value...

  1. Wire rope isolators for vibration isolation of equipment and structures – A review

    International Nuclear Information System (INIS)

    Balaji, P S; Rahman, M E; Lau, H H; Moussa, Leblouba

    2015-01-01

    Vibrations and shocks are studied using various techniques and analyzed to predict their detrimental effect on the equipment and structures. In cases, where the effects of vibration become unacceptable, it may cause structural damage and affect the operation of the equipment. Hence, adding a discrete system to isolate the vibration from source becomes necessary. The Wire Rope Isolator (WRI) can be used to effectively isolate the system from disturbing vibrations. The WRI is a type of passive isolator that exhibits nonlinear behavior. It consists of stranded wire rope held between two metal retainer bars and the metal wire rope is made up of individual wire strands that are in frictional contact with each other, hence, it is a kind of friction-type isolator. This paper compiles the research work on wire rope isolators. This paper presents the research work under two categories, namely monotonic and cyclic loading behaviors of WRI. The review also discusses the different terminologies associated with vibration isolation system and highlights the comparison between various isolation systems. (paper)

  2. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    International Nuclear Information System (INIS)

    Reshak, A.H.; Khan, Saleem Ayaz; Kamarudin, H.; Bila, Jiri

    2014-01-01

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor

  3. NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Khan, Saleem Ayaz, E-mail: sayaz_usb@yahoo.com [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic)

    2014-01-05

    Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor.

  4. Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

    International Nuclear Information System (INIS)

    Boxberg, Fredrik; Tulkki, Jukka

    2007-01-01

    Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals. In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model. The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations

  5. High-resolution AFM structure of DNA G-wires in aqueous solution.

    Science.gov (United States)

    Bose, Krishnashish; Lech, Christopher J; Heddi, Brahim; Phan, Anh Tuân

    2018-05-17

    We investigate the self-assembly of short pieces of the Tetrahymena telomeric DNA sequence d[G 4 T 2 G 4 ] in physiologically relevant aqueous solution using atomic force microscopy (AFM). Wire-like structures (G-wires) of 3.0 nm height with well-defined surface periodic features were observed. Analysis of high-resolution AFM images allowed their classification based on the periodicity of these features. A major species is identified with periodic features of 4.3 nm displaying left-handed ridges or zigzag features on the molecular surface. A minor species shows primarily left-handed periodic features of 2.2 nm. In addition to 4.3 and 2.2 nm ridges, background features with periodicity of 0.9 nm are also observed. Using molecular modeling and simulation, we identify a molecular structure that can explain both the periodicity and handedness of the major G-wire species. Our results demonstrate the potential structural diversity of G-wire formation and provide valuable insight into the structure of higher-order intermolecular G-quadruplexes. Our results also demonstrate how AFM can be combined with simulation to gain insight into biomolecular structure.

  6. Recovery and residual stress of SMA wires and applications for concrete structures

    International Nuclear Information System (INIS)

    Choi, Eunsoo; Cho, Sung-Chul; Park, Taehyo; Hu, Jong Wan; Chung, Young-Soo

    2010-01-01

    In general, NiTi shape memory alloys are used for applications in civil structures. NiTi SMAs show good superelasticity and shape memory effect properties. However, for application of the shape memory effect, it is desirable for SMAs to show a wide temperature hysteresis, especially for civil structures which are exposed to severe environmental conditions. NiTiNb SMAs, in general, show a wider temperature hysteresis than NiTi SMAs and are more applicable for civil structures. This study examines the temperature hysteresis of NiTiNb and NiTi SMAs, and their recovery and residual stress are investigated. In addition, the tensile behaviors of SMA wires under residual stress are evaluated. This study explains the possible applications for concrete structures with the shape memory effect and illustrates two experimental results of concrete cylinders and reinforced concrete columns. For both tests, SMA wires of NiTiNb and NiTi are used to confine concrete using residual stress. The SMA wire jackets on the concrete cylinders increase the peak strength and the ductility compared to the plain concrete cylinders. In addition, the SMA wire jackets on reinforced concrete columns increase the ductility greatly without flexural strength degradation

  7. Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

    International Nuclear Information System (INIS)

    Grenier, S.; Letoublon, A.; Proietti, M.G.; Renevier, H.; Gonzalez, L.; Garcia, J.M.; Priester, C.; Garcia, J.

    2003-01-01

    We have studied self-organized quantum wires of InAs, grown by molecular beam epitaxy onto a InP(0 0 1) substrate, by means of grazing incidence diffraction anomalous fine structure (DAFS). The equivalent quantum wires thickness is 2.5 monolayers. We measured the (4 4 0) and (4 2 0) GIDAFS spectra, at the As K-edge, keeping the incidence and exit angles close to the InP critical angle. The analysis of both the smooth and oscillatory contributions of the DAFS spectrum, provide valuable information about composition and strain inside the quantum wires and close to the interface. We also show preliminary results on InAs wires encapsulated by a 40 A thick InP capping layer, suggesting the DAFS capability of probing different iso-strain regions of the wires

  8. InAs nanowire formation on InP(001)

    International Nuclear Information System (INIS)

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-01-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

  9. Polarization dependence of the metamagnetic resonance of cut-wire-pair structure by using plasmon hybridization

    International Nuclear Information System (INIS)

    Dung, Nguyen Van; Yoo, Young Joon; Lee, Young Pak; Tung, Nguyen Thanh; Tung, Bui Son; Lam, Vu Dinh

    2014-01-01

    The influence of lattice constants on the electromagnetic behavior of a cut-wire-pair (CWP) structure has been elucidated. In this report, we performed both simulations and experiments to determine the influence of polarization on the metamagnetic resonance of the CWP structure. The key finding is the result of an investigation on the plasmon hybridization between the two CWs, which showed that the polarization of the incident wave was affected. Good agreement between numerical simulation and measurement is achieved.

  10. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    Science.gov (United States)

    Travelli, Armando

    1988-01-01

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  11. Wire measurement of impedance of an X-band accelerating structure

    CERN Document Server

    Baboi, N; Dolgashev, V A; Jones, R M; Lewandowski, J R; Tantawi, S G; Wang, J W

    2004-01-01

    Several tens of thousands of accelerator structures will be needed for the next generation of linear collders known as the GLC/NLC (Global Linear Collider/Next Linear Collider). To prevent the beam being driven into a disruptive BBU (Beam Break Up) mode or at the very least, the emittance being signifcantly diluted, it is important to damp down the wakefield left by driving bunches to a manageable level. Manufacturing errors and errors in design need to be measurable and compared with predictions. We develop a circuit model of wire-loaded X-band accelerator structures. This enables the wakefield (the inverse transform of the beam impedance) to be readily computed and compared with the wire measurement. We apply this circuit model to the latest series of accelerating for the GLC/NLC. This circuit model is based upon the single-cell model developed in [1] extended here to complete, multi-cell structures.

  12. PECULIARITIES OF FORMATION OF STRUCTURE AND PROPERTIES AT THERMO-MECHANICAL PROCESSING OF ROLLED WIRE OF NICKEL

    Directory of Open Access Journals (Sweden)

    V. A. Lutsenko

    2012-01-01

    Full Text Available There are results of researches of the mechanical properties and structure of the wire rod made of low-carbon nickel molybdenum steel after reduction to toughness thermomechanical treatment in the stream of high-speed wire mill.

  13. GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-01-01

    Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. ISSN 2053-1591 R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠk(CZ) LO1603 Institutional support: RVO:68378271 Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.068, year: 2016

  14. Radiation excited by a charged-particle bunch on a planar periodic wire structure

    Directory of Open Access Journals (Sweden)

    Andrey V. Tyukhtin

    2014-12-01

    Full Text Available The electromagnetic field of a bunch moving in the presence of a plane grid composed of thin parallel wires is considered by using the averaged boundary conditions method. Two different cases of motion are examined. In the first one, the bunch moves at a constant distance from the grid orthogonally to the wires. The excited surface wave is presented in the form of a spectral integral for a thin bunch with an arbitrary longitudinal profile. The wave propagates along the wires and does not decay with distance (if dissipation is negligible. Energy losses of the bunch over a unit path are obtained. In the second case, the bunch orthogonally crosses the wire grid. The volume and surface waves are separately analyzed. Properties of the spectral angular density of energy of volume radiation in the far-field zone are described. The energy losses due to the volume and surface radiation are determined. It is demonstrated that the structure of the surface waves in both cases allows determination of the length of the bunch.

  15. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  16. Electrical Crystallization Mechanism and Interface Characteristics of Nano wire Zn O/Al Structures Fabricated by the Solution Method

    International Nuclear Information System (INIS)

    Tseng, Y.W.; Hung, F.Y.; Lui, T.Sh.; Chen, Y.T.; Xiao, R.S.; Chen, K.J.

    2012-01-01

    Both solution nano wire Zn O and sputtered Al thin film on SiO 2 as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nano structure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of Zn O wires to form aluminum doped zinc oxide (AZO)/Zn O wires. The Al doping concentration and the distance of the Zn O wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was ∼211 degree C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.

  17. PECULIARITIES OF FORMATION OF STRUCTURE AND PROPERTIES AT THERMO-MECHANICAL PROCESSING OF ROLLED WIRE OF NICKEL-MOLYBDENUM STEEL WITH WELDING FUNCTION

    OpenAIRE

    V. A. Lutsenko

    2012-01-01

    There are results of researches of the mechanical properties and structure of the wire rod made of low-carbon nickel molybdenum steel after reduction to toughness thermomechanical treatment in the stream of high-speed wire mill.

  18. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  19. The Effect of INA [(R)-1-O-(1-Pyrenylmethyl)Glycerol] Insertions on the Structure and Biological Activity of a G-Quadruplex from a Critical Kras G-Rich Sequence

    DEFF Research Database (Denmark)

    Cogoi, Susanna; Paramasivan, Manikandan; Xodo, Luigi E.

    2007-01-01

    Quadruplex-forming oligonucleotides containing INA [(R)-1-O-(1-pyrenylmethyl)glycerol] insertions have been designed and studied for their capacity to inhibit the expression of the KRAS oncogene in pancreatic adenocarcinoma cells. It is found that INA can influence the folding topology of the G-q...

  20. Analysis of ultra-relativistic charged particle beam and stretched wire measurement interactions with cylindrically symmetric structures

    International Nuclear Information System (INIS)

    Deibele, C.E.

    1996-01-01

    The beam impedance and wakefield are quantities which describe the stability of charged particles in their trajectory within an accelerator. The stretched wire measurement technique is a method which estimates the beam impedance and wakefield. Definitions for the beam impedance, the wakefield, and the stretched wire measurement are presented. A pillbox resonator with circular beampipes is studied for its relatively simple profile and mode structure. Theoretical predictions and measurement data are presented for the interaction of various charged particle beams and center conductor geometries between the cavity and beampipe. Time domain predictions for the stretched wire measurement and wakefield are presented and are shown to be a linear interaction

  1. Control of flow structure in the wake region of circular cylinder with meshy wire in deep water

    Directory of Open Access Journals (Sweden)

    Burcu Oğuz

    2016-08-01

    Full Text Available In this study the aim is decreasing the effect and the intensity of the temporary loads resulted from vortex shedding that have an impact on the cylinder (chimneys, high buildings etc. located in deep water and the object or objects in the wake region and definition of the optimum values (wire thickness and porosity β With different thickness and different porosity ratios the effect of meshy wire that surrounded a circular cylinder of D=50 mm diameter was observed at Re_D=5000. The porosity ratios were four different values between a range of β=0.5-0.8 with an interval of 0.1. The thicknesses of wire were 1 mm, 2 mm, 3 mm and 4 mm. The flow structure in the wake region of circular cylinder was tried to be controlled by meshy wire that surrounded the cylinder. Experiments were carried out by using particle image velocimetry (PIV technique. Comparing with bare cylinder results, turbulence kinetic energy (TKE and Reynolds shear stress values increase with wire thicknesses of b=1 mm, 2 mm for all porosity ratios and decrease with b=3 mm, 4 mm. With porosity ratio of β=0.6 and wire thickness of b=4 mm TKE and Reynolds shear stress results show that meshy wire controls the flow in the wake region of the cylinder. Frequency value results also define that best flow control is obtained with β=0.6 and b=4 mm.

  2. New Structure Design and Simulation of Brake by Wire System Based on Giant-magnetostrictive Material

    Directory of Open Access Journals (Sweden)

    Changbao CHU

    2014-04-01

    Full Text Available Existing electronic mechanical brake by wire system has several disadvantages. For instance, system actuators are complex, response speed slower, larger vibration noise, etc. This paper discusses a new type brake by wire system based on giant-magnetostrictive material. The new type brake by wire system model was set up under Matlab/Simulink software environment. PID control method was used to control the brake by wire system. Simulation results shows that the new type brake by wire system achieves better braking performance compared with hydraulic braking system. This work provides a new idea for researching automobile brake by wire system.

  3. Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire

    DEFF Research Database (Denmark)

    Nguyen, H.A.; Grange, T.; Malik, N.S.

    2017-01-01

    Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.......Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons....

  4. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Maryński, A.; Sĕk, G.; Musiał, A.; Andrzejewski, J.; Misiewicz, J. [Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Gilfert, C.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132 Kassel (Germany); Capua, A.; Karni, O.; Gready, D.; Eisenstein, G. [Department of Electrical Engineering, Technion, Haifa 32000 (Israel); Atiya, G.; Kaplan, W. D. [Department of Materials Science and Engineering, Technion, Haifa 32000 (Israel); Kölling, S. [Fraunhofer Institute for Photonic Microsystems, Center for Nanoelectronic Technologies, Königsbrücker Straße 180, D-01099 Dresden (Germany)

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  5. Structural, magnetic, and lattice-dynamical interface properties of epitactical iron films on InAs(001) and GaAs(001) substrates; Strukturelle, magnetische und gitterdynamische Grenzflaecheneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Peters, Robert

    2009-07-14

    In this thesis the structure, magnetism and interface properties of ferromagnet-semiconductor hybrid structures were investigated. The main goal of this thesis was to obtain information on physical properties at the interface between a ferromagnetic metal and a III-V semiconductor (SC). For this purpose Fe films that serve as ferromagnetic contacts were deposited in ultrahigh vacuum (UHV) on InAs(001) and GaAs(001) substrates, respectively, and investigated. Both systems are interesting model systems with respect to electrical spin injection from a ferromagnetic metal into a semiconductor. In order for spin injection to occur, it is known that a Schottky barrier must form at the Fe/SC interface. Film growth and film structure were investigated in-situ in UHV by electron diffraction (RHEED) and ex-situ by X-ray diffraction. For determining the magnetic properties {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS) combines with {sup 57}Fe probe-layer technique was employed at different temperatures. Further, the partial Fe phonon density of states (PDOS) at the Fe/InAs (001) interface was determined by nuclear resonant inelastic X-ray scattering (NRIXS) from a {sup 57}Fe probe-layer. The CEM spectra (at room temperature) provided relatively high values of the average hyperfine magnetic field of left angle B{sub hf} right angle {proportional_to} 27 T and of the most-probable hyperfine magnetic field of B{sub hf,} {sub peak} {proportional_to} 30 T. This provides evidence for relativ high average Fe magnetic moments of {proportional_to} 1.8 {mu}{sub B}. The partial Fe phonon density of states (PDOS) at the Fe/InAs(001) interface is remarkably modified as compared to that of bulk bcc Fe. Using magnetometry and {sup 57}Fe CEMS, a strong temperature dependent magnetization directions was observed for Fe/Tb multilayers on InAs(001). Furthermore it is shown that such Fe/Tb multilayers on p-InAs(001) with perpendicular spin texture are useful as potential

  6. Pacemaker wires

    International Nuclear Information System (INIS)

    Fransson, S.G.

    1993-01-01

    Evaluation of pacemaker wires were performed by comparing Advanced Multiple Beam Equalization Radiography (AMBER) with conventional chest radiography. The scanning equalization technique of the AMBER unit makes it superior to conventional technique in the depiction of different structures in the mediastinum or in the pleural sinuses. So far motion artifacts have not been considered clinically important. The longer exposure time, however, may impair the assessment of pacemaker wires. The motion artifact described may not only make adequate evaluation impossible but may even give a false impression of a lead fracture. The difference between the two systems was significant. (orig.)

  7. Quantum-well exciton polariton emission from multi-quantum-well wire structures

    Science.gov (United States)

    Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

    The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.

  8. Electrical characterisation of Sn doped InAs grown by MOVPE

    International Nuclear Information System (INIS)

    Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

    2008-01-01

    The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. InaSAFE applications in disaster preparedness

    Science.gov (United States)

    Pranantyo, Ignatius Ryan; Fadmastuti, Mahardika; Chandra, Fredy

    2015-04-01

    Disaster preparedness activities aim to reduce the impact of disasters by being better prepared to respond when a disaster occurs. In order to better anticipate requirements during a disaster, contingency planning activities can be undertaken prior to a disaster based on a realistic disaster scenario. InaSAFE is a tool that can inform this process. InaSAFE is a free and open source software that estimates the impact to people and infrastructure from potential hazard scenarios. By using InaSAFE, disaster managers can develop scenarios of disaster impacts (people and infrastructures affected) to inform their contingency plan and emergency response operation plan. While InaSAFE provides the software framework exposure data and hazard data are needed as inputs to run this software. Then InaSAFE can be used to forecast the impact of the hazard scenario to the exposure data. InaSAFE outputs include estimates of the number of people, buildings and roads are affected, list of minimum needs (rice and clean water), and response checklist. InaSAFE is developed by Indonesia's National Disaster Management Agency (BNPB) and the Australian Government, through the Australia-Indonesia Facility for Disaster Reduction (AIFDR), in partnership with the World Bank - Global Facility for Disaster Reduction and Recovery (GFDRR). This software has been used in many parts of Indonesia, including Padang, Maumere, Jakarta, and Slamet Mountain for emergency response and contingency planning.

  10. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  11. Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

    Science.gov (United States)

    Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

    2008-08-01

    Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.

  12. Dwell-time effect on the synthesis of a nano-structured material in water by using Ni wire explosion

    International Nuclear Information System (INIS)

    Eom, Gyu Sub; Kwon, Hyeok Jung; Cho, Yong Sub; Paek, Kwang Hyun; Joo, Won Tae

    2014-01-01

    Nickel nano-structured materials are synthesized by using a wire explosion in water. Based on an analysis of each step of the wire explosion, we propose insufficient energy deposition before a plasma restrike as the cause for the inclusion of coarse particles in the wire-explosion product. We confirmed that more energy, in excess of 30%, could be deposited by increasing the dwell time, which resulted from a compression of vapor by the surrounding water and from suppression of plasma restrikes. Because of an increased energy loss into the surrounding water, the specific energy increased by two-fold compared to a gas atmosphere. The synthesized nano-structured nickel showed a uniform particle size of 20 nm with a few coarse particles that were mainly metallic nickel with a little oxide and hydroxide phases. The possibility for large-volume production through a continuous explosion of 300 shots was confirmed.

  13. Structural and phase transformations in zinc and brass wires under heating with high-density current pulse

    Energy Technology Data Exchange (ETDEWEB)

    Pervikov, A. V. [Laboratory of Physical Chemistry of Ultrafine Materials, Institute of Strength Physics and Materials Science, 2/4, pr. Akademicheskii, 634021 Tomsk, Russia and Department of High Voltage Electrophysics and High Current Electronics, Tomsk Polytechnic University, 30 Lenin Avenue, 634050 Tomsk (Russian Federation)

    2016-06-15

    The work is focused on revealing the mechanism of structure and phase transformations in the metal wires under heating with a high-density current pulse (the electric explosion of wires, EEWs). It has been demonstrated on the example of brass and zinc wires that the transition of a current pulse with the density of j ≈ 3.3 × 10{sup 7} A/cm{sup 2} results in homogeneous heating of the crystalline structure of the metal/alloy. It has been determined that under heating with a pulse of high-density current pulse, the electric resistance of the liquid phases of zinc and brass decreases as the temperature increases. The results obtained allow for a conclusion that the presence of the particles of the condensed phase in the expanding products of EEW is the result of overheating instabilities in the liquid metal.

  14. Structure and electrochemical properties of copper wires with seamless 1D nanostructures

    Directory of Open Access Journals (Sweden)

    Yutong Wu

    2018-04-01

    Full Text Available A seamless Cu nanowire array grown on Cu wire is prepared by combining thermal oxidation method and electrochemical reduction. The data set described in this paper includes the structure of the Cu nanowires electrode, electrocatalytic active surface area, linear sweep voltammetry and amperometry measurement for nitrate sensing. The electrochemical data show that Cu nanowire arrays exhibited a linear response to nitrate ions over a concentration range from 50 μM to 600 μM (R2 = 0.9974 with a sensitivity of 0.357 μA μM−1 cm−1 and detection limit of 12.2 μM at a signal-to-noise ratio of 3, respectively.

  15. An Efficient Framework for Analysis of Wire-Grid Shielding Structures over a Broad Frequency Range

    Directory of Open Access Journals (Sweden)

    A. Karwowski

    2016-12-01

    Full Text Available A computationally efficient MoM-based framework for broadband electromagnetic simulation of wire-grid shielding structures is presented in the paper. Broadband capability of the approach is attained through supporting MoM by an adaptive frequency sweep combined with rational interpolation of the observable implemented via Stoer-Bulirsch algorithm. The performance increase is gained by employing CUDA-enabled CPU+GPU co-processing. For large-size problems exceeding the amount of memory available on the GPU device, a hybrid out-of-GPU memory LU decomposition algorithm is employed. The demonstration examples are provided to illustrate the the accuracy and high efficiency of the approach.

  16. Fabrication, Structural Characterization and Uniaxial Tensile Properties of Novel Sintered Multi-Layer Wire Mesh Porous Plates

    Directory of Open Access Journals (Sweden)

    Liuyang Duan

    2018-01-01

    Full Text Available There is an increasing interest in developing porous metals or metallic foams for functional and structural applications. The study of the physical and mechanical properties of porous metals is very important and helpful for their application. In this paper, a novel sintered multilayer wire mesh porous plate material (WMPPs with a thickness of 0.5 mm–3 mm and a porosity of 10–35% was prepared by winding, pressing, rolling, and subsequently vacuum sintering them. The pore size and total size distribution in the as-prepared samples were investigated using the bubble point method. The uniaxial tensile behavior of the WMPPs was investigated in terms of the sintering temperature, porosity, wire diameter, and manufacturing technology. The deformation process and the failure mechanism under the tensile press was also discussed based on the appearance of the fractures (SEM figures. The results indicated that the pore size and total size distribution were closely related to the raw material used and the sintering temperature. For the WMPPs prepared by the wire mesh, the pore structures were inerratic and the vast majority of pore size was less than 10 μm. On the other hand, for the WMPPs that were prepared by wire mesh and powder, the pore structures were irregular and the pore size ranged from 0 μm–50 μm. The experimental data showed that the tensile strength of WMPPs is much higher than any other porous metals or metallic foams. Higher sintering temperatures led to coarser joints between wires and resulted in higher tensile strength. The sintering temperature decreased from 1330 °C to 1130 °C and the tensile strength decreased from 296 MPa to 164 MPa. Lower porosity means that there are more metallurgical joints and metallic frameworks resisting deformation per unit volume. Therefore, lower porosities exhibit higher tensile strength. An increase of porosity from 17.14% to 32.5% led to the decrease of the tensile strength by 90 MPa. The

  17. Structure and electronic properties of molybdenum monatomic wires encapsulated in carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    GarcIa-Fuente, A; Vega, A [Departamento de Fisica Teorica, Atomica y Optica. Universidad de Valladolid, E-47011 Valladolid (Spain); GarcIa-Suarez, V M; Ferrer, J [Departamento de Fisica and CINN, Universidad de Oviedo, 33007 Oviedo (Spain)

    2011-07-06

    Monatomic chains of molybdenum encapsulated in single-walled carbon nanotubes (CNTs) of different chiralities are investigated using density functional theory. We determine the optimal size of the CNT for encapsulating a single atomic wire, as well as the most stable atomic arrangement adopted by the wire. We also study the transport properties in the ballistic regime by computing the transmission coefficients and tracing them back to the electronic conduction channels of the wire and the host. We predict that CNTs of appropriate radii encapsulating a Mo wire have metallic behavior, even if both the nanotube and the wire are insulators. Therefore, encapsulation of Mo wires in CNTs is a way to create conductive quasi-one-dimensional hybrid nanostructures.

  18. Processing, Structural Characterization and Comparative Studies on Uniaxial Tensile Properties of a New Type of Porous Twisted Wire Material

    Directory of Open Access Journals (Sweden)

    Fei Wu

    2015-08-01

    Full Text Available A self-developed rotary multi-cutter device cuts stainless steel wire ropes into segments to fabricate twisted wires. Stainless steel porous twisted wire materials (PTWMs with a spatial composite intertexture structure are produced by the compaction and subsequent vacuum solid-phase sintering of twisted wires. The stainless steel PTWMs show two types of typical uniaxial tensile failure modes, i.e., a 45° angle fracture mode and an auxetic failure mode (the PTWMs expand along the direction perpendicular to the tension. The effects of the sintering parameters, porosities, wire diameters, and sampling direction on the tensile properties of the PTWMs are carefully investigated. By increasing the sintering temperature from 1130 °C to 1330 °C, the tensile strength of the PTWMs with 70% target porosity increased from 7.7 MPa to 28.6 MPa and the total failure goes down to 50%. When increasing the sintering time from 90 min to 150 min, the tensile strength increases from 12.4 MPa to 19.1 MPa and the total failure elongation drops to 78.6%. The tensile strength of the PTWMs increases from 28.9 MPa to 112.7 MPa with decreasing porosity from 69.5% to 46.0%, and the total failure elongation also increases from 14.8% to 40.7%. The tensile strength and the failure strain of the PTWMs with fine wires are higher than those of the PTWMs with coarse wires under the same porosity. Sampling direction has a small influence on the tensile properties of the PTWMs.

  19. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    Science.gov (United States)

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  20. InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

    International Nuclear Information System (INIS)

    Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

    2007-01-01

    We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

  1. Structural Investigations of GaAs/AIAs quantum wires and quantum dots

    NARCIS (Netherlands)

    Darhuber, A.A.; Bauer, G.; Wang, P.D.; Song, Y.P.; Sotomayor Torres, C.M.; Holland, M.C.

    1995-01-01

    We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs quantum wires and quantum dots by means of reciprocal-space mapping using triple-axis X-ray diffractometry. From the X-ray data the lateral periodicity of wires and dots, the etch depth and the angle

  2. Raman spectroscopy as a tool to investigate the structure and electronic properties of carbon-atom wires

    Directory of Open Access Journals (Sweden)

    Alberto Milani

    2015-02-01

    Full Text Available Graphene, nanotubes and other carbon nanostructures have shown potential as candidates for advanced technological applications due to the different coordination of carbon atoms and to the possibility of π-conjugation. In this context, atomic-scale wires comprised of sp-hybridized carbon atoms represent ideal 1D systems to potentially downscale devices to the atomic level. Carbon-atom wires (CAWs can be arranged in two possible structures: a sequence of double bonds (cumulenes, resulting in a 1D metal, or an alternating sequence of single–triple bonds (polyynes, expected to show semiconducting properties. The electronic and optical properties of CAWs can be finely tuned by controlling the wire length (i.e., the number of carbon atoms and the type of termination (e.g., atom, molecular group or nanostructure. Although linear, sp-hybridized carbon systems are still considered elusive and unstable materials, a number of nanostructures consisting of sp-carbon wires have been produced and characterized to date. In this short review, we present the main CAW synthesis techniques and stabilization strategies and we discuss the current status of the understanding of their structural, electronic and vibrational properties with particular attention to how these properties are related to one another. We focus on the use of vibrational spectroscopy to provide information on the structural and electronic properties of the system (e.g., determination of wire length. Moreover, by employing Raman spectroscopy and surface enhanced Raman scattering in combination with the support of first principles calculations, we show that a detailed understanding of the charge transfer between CAWs and metal nanoparticles may open the possibility to tune the electronic structure from alternating to equalized bonds.

  3. Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Jens; Gottschalch, Volker; Paetzelt, Hendrik [Institut fuer Anorganische Chemie, Universitaet Leipzig, Johannesallee 29, D-04103 Leipzig (Germany); Wagner, Gerald [Institut fuer Kristallographie und Mineralogie, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig (Germany); Pietsch, Ulrich [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany)

    2008-07-01

    Semiconductor nanowires (NW) acquire recently attraction because of promising new application fields in electronics and optoelectronic. We applied the vapor-liquid-solid mechanism with gold seeds in combination with low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) to achieve replicable InAs NW growth with high growth rates. Since the initial alloying of the gold seeds with the substrate material plays a deciding role for the inceptive NW growth, InAs free standing nanowires were grown on GaAs(111)B substrate as well as on InAs/GaAs(111)B quasi-substrate. The influence of the MOVPE parameters will be discussed with respect to NW morphology and real-structure. A special focus will be set on the heteroepitaxial InAs NW growth on GaAs substrates. Gracing-incidence X-ray studies and transmission electron microscopy investigations revealed the existence of a thin Ga{sub x}In{sub 1-x}As graduated alloy layer with embedded crystalline gold alloy particles at the NW substrate interface. The effect of droplet composition on the VLS growth will be presented in a thermodynamic model.

  4. Shape memory alloy wires turn composites into smart structures: I. Material requirements

    Science.gov (United States)

    Schrooten, Jan; Michaud, Veronique J.; Zheng, Yanjun; Balta-Neumann, J. Antonio; Manson, Jan-Anders E.

    2002-07-01

    Composites containing thin Shape Memory Alloy (SMA) wires show great potential as materials able to adapt their shape, thermal behavior or vibrational properties to external stimuli. The functional properties of SMA-composites are directly related to the constraining effect of the matrix on the reversible martensitic transformation of the embedded pre-strained SMA wires. The present work reports results of a concerted European effort towards a fundamental understanding of the manufacturing and design of SMA composites. This first part investigates the transformational behavior of constrained SMA wires and its translation into functional properties of SMA composites. Thermodynamic and thermomechanical experiments were performed on SMA wires. A model was developed to simulate the thermomechanical behavior of the wires. From the screening of potential wires it was concluded that NiTiCu, as well as R-phase NiTi appeared as best candidates. Requirements for the host composite materials were surveyed. A Kevlar-epoxy system was chosen. Finally, the quality of the SMA wire-resin interface was assessed by two different techniques. These indicated that a thin oxide layer seems to provide the best interfacial strength. A temperature window in which SMA composites can be safely used was also defined. The manufacturing and properties of the SMA composites will be discussed in Part II.

  5. Residual strain dependence on the matrix structure in RHQ-Nb3Al wires by neutron diffraction measurement

    International Nuclear Information System (INIS)

    Jin Xinzhe; Nakamoto, Tatsushi; Tsuchiya, Kiyosumi; Ogitsu, Toru; Yamamoto, Akira; Ito, Takayoshi; Harjo, Stefanus; Kikuchi, Akihiro; Takeuchi, Takao; Hemmi, Tsutomu

    2012-01-01

    We prepared three types of non-Cu RHQ-Nb 3 Al wire sample with different matrix structures: an all-Ta matrix, a composite matrix of Nb and Ta with a Ta inter-filament, and an all-Nb matrix. Neutron diffraction patterns of the wire samples were measured at room temperature in the J-PARC ‘TAKUMI’. To obtain the residual strains of the materials, we estimated the lattice constant a by multi-peak analysis in the wires. A powder sample of each wire was measured, where the powder was considered to be strain free. The grain size of all the powder samples was below 0.02 mm. For the wire sample with the all-Nb matrix, we also obtained the lattice spacing d by a single-peak analysis. The residual strains of the Nb 3 Al filament were estimated from the two analysis results and were compared. The resulting residual strains obtained from the multi-peak analysis showed a good accuracy with small standard deviation. The multi-peak analysis results for the residual strains of the Nb 3 Al filaments in the three samples (without Cu plating) were all tensile residual strain in the axial direction, of 0.12%, 0.12%, and 0.05% for the all-Ta matrix, the composite matrix, and the all-Nb matrix, respectively. The difference in the residual strain of the Nb 3 Al filament between the composite and all-Nb matrix samples indicates that the type of inter-filament material shows a great effect on the residual strain. In this paper, we report the method of measurement, method of analysis, and results for the residual strain in the three types of non-Cu RHQ-Nb 3 Al wires. (paper)

  6. Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2011-01-01

    Full Text Available Abstract Catalyst-free, vertical array of InAs nanowires (NWs are grown on Si (111 substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

  7. Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate

    NARCIS (Netherlands)

    Keizer, J.G.; Jo, M.; Mano, T.; Noda, T.; Sakoda, K.; Koenraad, P.M.

    2011-01-01

    We report the structural analysis at the atomic scale of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A-oriented substrate. The shape, interfaces, and composition of these nanostructures and their surrounding matrix are investigated. We show that quantum wires can be

  8. PECULIARITIES OF FORMATION OF STRUCTURE AND PROPERTIES AT THERMO-MECHANICAL PROCESSING OF ROLLED WIRE OF NICKEL-MOLYBDENUM STEEL WITH WELDING FUNCTION

    Directory of Open Access Journals (Sweden)

    V. A. Lutsenko

    2012-01-01

    Full Text Available There are results of researches of the mechanical properties and structure of the wire rod made of low-carbon nickel molybdenum steel after reduction to toughness thermomechanical treatment in the stream of high-speed wire mill.

  9. Women Fellows of INAE | Women in Science | Initiatives | Indian ...

    Indian Academy of Sciences (India)

    Women Fellows of INAE. INAE - Indian National Academy of Engineering. Ms. Alpa Sheth Civil Engineering. Prof. Bharathi Bhat Electronics & Communication Engineering. Prof. Dipanwita Roy Chowdhury Computer Engineering and Information Technology. Prof. Kamala Krithivasan Computer Engineering and Information ...

  10. Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

    NARCIS (Netherlands)

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Fiore, A.; Dagli, N.

    2007-01-01

    In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss

  11. Fabrication and superconducting properties of a simple-structured jelly-roll Nb{sub 3}Al wire with low-temperature heat-treatment

    Energy Technology Data Exchange (ETDEWEB)

    Cui, L.J. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Yan, G., E-mail: gyan@c-wst.com [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Pan, X.F. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Zhang, P.X. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Northwest Institute for Nonferrous Metal Research (NIN), Xi’an 710016 (China); Qi, M. [Northwest Institute for Nonferrous Metal Research (NIN), Xi’an 710016 (China); Liu, X.H.; Feng, Y. [National Engineering Laboratory for Superconducting Materials (NELSM), Western Superconducting Technologies (WST) Co. Ltd., Xi’an 710018 (China); Chen, Y.L.; Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Superconductivity and New Energy R& D Center, Southwest Jiaotong University (SWJTU), Chengdu 610031 (China)

    2015-06-15

    Highlights: • Nb{sub 3}Al superconducting wires with Cu-matrix and different filament numbers were prepared by the jelly-roll method. • The length of 18-cores Nb{sub 3}Al superconducting wire reaches 100 m without any breakage and intermediate anneal. • This wire has the uniform filament-shapes and fine long-wire homogeneity. • This Nb{sub 3}Al long wire has the T{sub c} of 13.4 K and J{sub c} of 4.7 × 10{sup 4} A/cm{sup 2} at 4.2 K and 12 T. - Abstract: With extremely high critical current density (J{sub c}) and excellent strain tolerance, Nb{sub 3}Al superconductor is considered as an alternative to Nb{sub 3}Sn for application of high-field magnets. However, owing to their complex structure, Nb{sub 3}Al superconducting wires can hardly meet the requirement of engineering application at present. In this work, a novel simple-structured Nb{sub 3}Al superconducting wires with Cu-matrix and different filament numbers were prepared by the conventional jelly-roll method, as well as a heat-treatment of 800–850 °C for 20–50 h. The results show that a 18-filament superconducting wire with length longer than 100 m can be successfully prepared by this method, and also this Nb{sub 3}Al long wire has the T{sub c} of 13.4 K and J{sub c} of 4.7 × 10{sup 4} A/cm{sup 2} at 4.2 K and 12 T. These suggest that with further optimization, the simple-structured Nb{sub 3}Al superconducting wires are very promising to fabricate the km-grade long wires to meet the requirement of engineering application.

  12. Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sales, D L; Molina, S I [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Campus Rio San Pedro, E-11510 Puerto Real, Cadiz (Spain); Varela, M; Pennycook, S J [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Campus Rio San Pedro, E-11510 Puerto Real, Cadiz (Spain); Gonzalez, L; Gonzalez, Y [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Fuster, D, E-mail: david.sales@uca.es [UMDO - Unidad Asociada al CSIC-IMM, Instituto de Ciencia de Materiales, Universidad de Valencia, PO Box 22085, 4607 Valencia (Spain)

    2010-08-13

    Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski-Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of {l_brace}114{r_brace} or {l_brace}118{r_brace}, ending with the formation of mature quantum wires with {l_brace}114{r_brace} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calculation of the strain energy during the quantum wire formation process. The observed morphological evolution is explained in terms of the calculated elastic energy changes at the growth front. Regions of the wetting layer close to the nanostructure perimeters have higher strain energy, causing migration of As atoms towards the quantum wire terraces, where the structure is partially relaxed; the thickness of the wetting layer is reduced in these zones and the island height increases until the (001) facet is removed.

  13. InAs quantum dots as charge storing elements for applications in flash memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul; Biswas, Pranab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)

    2015-08-15

    Graphical abstract: - Highlights: • Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO{sub 2}. • Memory device with InAs quantum dots as charge storage nodes are fabricated. • Superior memory window, low leakage and reasonably good retention were observed. • Carrier transport phenomena are explained in both program and erase operations. - Abstract: InAs quantum dots (QDs) were grown by metal organic chemical vapor deposition technique to use them as charge storage nodes. Uniform QDs were formed with average diameter 5 nm and height 5–10 nm with a density of 2 × 10{sup 11} cm{sup −2}. The QDs were grown on high-k dielectric layer (ZrO{sub 2}), which was deposited onto ultra-thin GaP passivated p-GaAs (1 0 0) substrate. A charge storage device with the structure Metal/ZrO{sub 2}/InAs QDs/ZrO{sub 2}/(GaP)GaAs/Metal was fabricated. The devices containing InAs QDs exhibit superior memory window, low leakage current density along with reasonably good charge retention. A suitable electronic band diagram corresponding to programming and erasing operations was proposed to explain the operation.

  14. Electronic and optical properties of graphene-like InAs: An ab initio study

    Science.gov (United States)

    Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

    2018-03-01

    The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

  15. Structural, magnetic and electrical transport properties in cold-drawn thin Fe-rich wires

    International Nuclear Information System (INIS)

    Garcia, C.; Chizhik, A.; Val, J.J. del; Zhukov, A.; Blanco, J.M.; Gonzalez, J.

    2005-01-01

    Microstructural (X-ray diffraction), magnetic properties (hysteresis loop), electrical resistivity, magneto-impedance and stress impedance effects have been investigated in cold-drawn Fe 77.5 B 15 Si 7.5 amorphous wire. Initial amorphous wire (obtained by the in-rotating-water technique) with diameter of 125 μm was submitted to cold-drawn process decreasing the diameter to 50 μm. Such cold-drawn wire was treated by current annealing (currents of 190, 210, 220 and 230 mA during times between 1 and 45 min) for tailoring the magnetic and electrical transport properties. A qualitative analysis of the magnetoimpedance and stress impedance effects is given by considering the influence of the magnetoelastic anisotropy and frequency of the AC driving electrical current on the circular permeability

  16. Hirarchical structures and strength in cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Hansen, Niels; Godfrey, Andrew

    2014-01-01

    and the cementite decomposition, have been analyzed and quantified by scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy for wires cold drawn up to a strain of 3.68. Three strengthening mechanisms, boundary strengthening, dislocation strengthening and solid...... solution hardening, have been analyzed based on the microstructural analysis. The individual and combined contributions, of these mechanisms to the wire strength have been estimated and good agreement has been found between the measured flow stress and values estimated based on an assumption of linear...... additivity of the three strengthening mechanisms. Mechanisms behind the higher strength of about 6.4 GPa in the wires drawn to higher strains and to a finer microstructural scale is also discussed....

  17. Effect of Ag in structural, electrical and magnetic properties of Ag-sheated Bi-2223 wires

    Directory of Open Access Journals (Sweden)

    D Sohrabi

    2009-08-01

    Full Text Available  In this study, the superconducting properties of Bi-2223/Ag wires, made by the PIT method have been studied. Powder samples were prepared using conventional solid state reaction method. After calcination, samples with different Ag percent (0, 5, 10, 15, 20, and 25 prepared and sintered at 830 °C. It was shown that Ag addition has not only affected the formation of the desired Bi-2223 phase and the microstructure of these wires, but also influenced on the critical current density (JC and critical temperature.

  18. A proton wire and water channel revealed in the crystal structure of isatin hydrolase

    DEFF Research Database (Denmark)

    Bjerregaard-Andersen, Kaare; Sommer, Theis; Jensen, Jan Kristian

    2014-01-01

    to a novel family of metalloenzymes that include the bacterial kynurenine formamidase. The product state, mimicked by bound thioisatinate, reveals a water molecule that bridges the thioisatinate to a proton wire in an adjacent water channel and thus allows the proton released by the reaction to escape only...... when the product is formed. The functional proton wire present in IH-b represents a unique catalytic feature common to all hydrolases is here trapped and visualized for the first time. The local molecular environment required to coordinate thioisatinate allows stronger and more confident identification...

  19. Defect structures in MgB2 wires introduced by hot isostatic pressing

    International Nuclear Information System (INIS)

    Liao, X Z; Serquis, A; Zhu, Y T; Civale, L; Hammon, D L; Peterson, D E; Mueller, F M; Nesterenko, V F; Gu, Y

    2003-01-01

    The microstructures of MgB 2 wires prepared by the powder-in-tube technique and subsequent hot isostatic pressing were investigated using transmission electron microscopy. A large amount of crystalline defects including small-angle twisting, tilting and bending boundaries, in which high densities of dislocations reside, was found forming sub-grains within MgB 2 grains. It is believed that these defects resulted from particle deformation during the hot isostatic pressing process and are effective flux pinning centres that contribute to the high critical current densities of the wires at high temperatures and at high fields

  20. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  1. Thermoelectric Cooling-Aided Bead Geometry Regulation in Wire and Arc-Based Additive Manufacturing of Thin-Walled Structures

    Directory of Open Access Journals (Sweden)

    Fang Li

    2018-01-01

    Full Text Available Wire and arc-based additive manufacturing (WAAM is a rapidly developing technology which employs a welding arc to melt metal wire for additive manufacturing purposes. During WAAM of thin-walled structures, as the wall height increases, the heat dissipation to the substrate is slowed down gradually and so is the solidification of the molten pool, leading to variation of the bead geometry. Though gradually reducing the heat input via adjusting the process parameters can alleviate this issue, as suggested by previous studies, it relies on experience to a large extent and inevitably sacrifices the deposition rate because the wire feed rate is directly coupled with the heat input. This study introduces for the first time an in-process active cooling system based on thermoelectric cooling technology into WAAM, which aims to eliminate the difference in heat dissipation between upper and lower layers. The case study shows that, with the aid of thermoelectric cooling, the bead width error is reduced by 56.8%, the total fabrication time is reduced by 60.9%, and the average grain size is refined by 25%. The proposed technique provides new insight into bead geometry regulation during WAAM with various benefits in terms of geometric accuracy, productivity, and microstructure.

  2. Wire Chamber

    CERN Multimedia

    Magnetoscriptive readout wire chamber. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  3. Wire chamber

    CERN Multimedia

    1967-01-01

    Magnetoscriptive readout wire chamber.Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  4. wire chamber

    CERN Multimedia

    Proportional multi-wire chamber. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle. Proportional wire chambers allow a much quicker reading than the optical or magnetoscriptive readout wire chambers.

  5. Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

    National Research Council Canada - National Science Library

    Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

    2005-01-01

    .... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

  6. Surface Preparation of InAs (110 Using Atomic Hydrogen

    Directory of Open Access Journals (Sweden)

    T.D. Veal

    2002-06-01

    Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

  7. Equivalence of electronic and mechanical stresses in structural phase stabilization: A case study of indium wires on Si(111)

    Science.gov (United States)

    Kim, Sun-Woo; Kim, Hyun-Jung; Ming, Fangfei; Jia, Yu; Zeng, Changgan; Cho, Jun-Hyung; Zhang, Zhenyu

    2015-05-01

    It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction or expansion. Here we demonstrate the equivalence of ES and MS in structural stabilization, using In wires on Si(111) as a prototypical example. Our systematic density-functional theory calculations reveal that, first, for the same degrees of carrier doping into the In wires, the ES of the high-temperature metallic 4 ×1 structure is only slightly compressive, while that of the low-temperature insulating 8 ×2 structure is much larger and highly anisotropic. As a consequence, the intrinsic energy difference between the two phases is significantly reduced towards electronically phase-separated ground states. Our calculations further demonstrate quantitatively that such intriguing phase tunabilities can be achieved equivalently via lattice-contraction induced MS in the absence of charge doping. We also validate the equivalence through our detailed scanning tunneling microscopy experiments. The present findings have important implications for understanding the underlying driving forces involved in various phase transitions of simple and complex systems alike.

  8. Spin interactions in InAs quantum dots

    Science.gov (United States)

    Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

  9. wire chamber

    CERN Multimedia

    1985-01-01

    Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  10. Wire chamber

    CERN Multimedia

    Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  11. wire chamber

    CERN Multimedia

    Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  12. wire chamber

    CERN Multimedia

    Was used in ISR (Intersecting Storage Ring) split field magnet experiment. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  13. Interaction and Cooperative Nucleation of InAsSbP Quantum Dots and Pits on InAs(100 Substrate

    Directory of Open Access Journals (Sweden)

    Gambaryan Karen

    2009-01-01

    Full Text Available Abstract An example of InAsSbP quaternary quantum dots (QDs, pits and dots–pits cooperative structures’ growth on InAs(100 substrates by liquid phase epitaxy (LPE is reported. The interaction and surface morphology of the dots–pits combinations are investigated by the high-resolution scanning electron microscope. Bimodal growth mechanism for the both QDs and pits nucleation is observed. Cooperative structures consist of the QDs banded by pits, as well as the “large” pits banded by the quantum wires are detected. The composition of the islands and the pits edges is found to be quaternary, enriched by antimony and phosphorus, respectively. This repartition is caused by dissociation of the wetting layer, followed by migration (surface diffusion of the Sb and P atoms in opposite directions. The “small” QDs average density ranges from 0.8 to 2 × 109 cm−2, with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the “small” pits is equal to (6–10 × 109 cm−2 with dimensions of 5–40 nm in width and depth. Lifshits–Slezov-like distribution for the amount and surface density of both “small” QDs and pits versus their average diameter is experimentally detected. A displacement of the absorption edge toward the long wavelength region and enlargement toward the short wavelength region is detected by the Fourier transform infrared spectrometry.

  14. The effect of mechano-chemical treatment on structural properties of the drawn TiNi-based alloy wire

    Science.gov (United States)

    Anikeev, Sergey; Hodorenko, Valentina; Gunther, Victor; Chekalkin, Timofey; Kang, Ji-hoon; Kang, Seung-baik

    2018-01-01

    The rapid development of biomedical materials with the advanced functional characteristics is a challenging task because of the growing demands for better material properties in-clinically employed. Modern medical devices that can be implanted into humans have evolved steadily by replacing TiNi-based alloys for titanium and stainless steel. In this study, the effect of the mechano-chemical treatment on structural properties of the matrix and surface layer of the drawn TiNi-based alloy wire was assessed. A range of samples have been prepared using different drawing and etching procedures. It is clear from the results obtained that the fabricated samples show a composite structure comprising the complex matrix and textured oxycarbonitride spitted surface layer. The suggested method of surface treatment is a concept to increase the surface roughness for the enhanced bio-performance and better in vivo integration.

  15. Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

    International Nuclear Information System (INIS)

    Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

    2012-01-01

    High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

  16. Soft and smart modular structures actuated by shape memory alloy (SMA) wires as tentacles of soft robots

    Science.gov (United States)

    Jin, Hu; Dong, Erbao; Xu, Min; Liu, Chunshan; Alici, Gursel; Jie, Yang

    2016-08-01

    This paper introduces the design and fabrication of a multi-layered smart modular structure (SMS) that has been inspired by the muscular organs and modularity in soft animals. The SMS is capable of planar reciprocal motion of bending in heating process and recovering in cooling process when SMA wires carry out phase transformation. An adaptive regulation heating strategy is applied to avoid overheating and achieve bending range control of the SMS based on the resistance feedback of the SMA wires which as actuator of the SMS. The SMS can modular assemble soft robots with multiple morphologies such as lateral robots, bilateral robots and actinomorphic robots. A five-armed actinomorphic soft robot is conducted to crawling in terrestrial ground (max speed: 140 mm s-1, 0.7 body s-1), swimming in underwater environment (max speed: 67 mm s-1, 2.5 height s-1) and griping fragile objects (max object weight: 0.91 kg, 15 times the weight of itself). Those demonstrate that the performance of the SMS is good enough to be modular units to establish soft robots which possess a high speed of response, good adaptability and a safe interaction with their environments.

  17. Structural-Phase States of Fe-Cu and Fe-Ag Bimetallic Particles Produced by Electric Explosion of Two Wires

    Science.gov (United States)

    Lerner, M. I.; Bakina, O. V.; Pervikov, A. V.; Glazkova, E. A.; Lozhkomoev, A. S.; Vorozhtsov, A. B.

    2018-05-01

    X-ray phase analysis, transmission electron microscopy, and X-ray microanalysis were used to examine the structural-phase states of Fe-Cu and Fe-Ag bimetallic nanoparticles. The nanoparticles were obtained by the electric explosion of two twisted metal wires in argon atmosphere. It was demonstrated that the nanoparticles have the structure of Janus particles. Presence of the Janus particle structure in the samples indicates formation of binary melt under conditions of combined electric explosion of two wires. Phases based on supersaturated solid solutions were not found in the examined samples. The data obtained allow arguing that it is possible to achieve uniform mixing of the two-wire explosion products under the described experiment conditions.

  18. Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution

    International Nuclear Information System (INIS)

    Fuster, David; Alen, Benito; Gonzalez, Luisa; Gonzalez, Yolanda; Martinez-Pastor, Juan; Gonzalez, Maria Ujue; GarcIa, Jorge M

    2007-01-01

    In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θ c , determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θ R c . At this θ R , the spontaneous formation of isolated quantum wires takes place. For θ>θ R this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ θ c . These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires

  19. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    KAUST Repository

    Rota, Michele B.

    2017-07-12

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

  20. Composite vascular scaffold combining electrospun fibers and physically-crosslinked hydrogel with copper wire-induced grooves structure.

    Science.gov (United States)

    Liu, Yuanyuan; Jiang, Chen; Li, Shuai; Hu, Qingxi

    2016-08-01

    While the field of tissue engineered vascular grafts has greatly advanced, many inadequacies still exist. Successfully developed scaffolds require mechanical and structural properties that match native vessels and optimal microenvironments that foster cell integration, adhesion and growth. We have developed a small diameter, three-layered composite vascular scaffold which consists of electrospun fibers and physically-crosslinked hydrogel with copper wire-induced grooves by combining the electrospinning and dip-coating methods. Scaffold morphology and mechanics were assessed, quantified and compared to native vessels. Scaffolds were seeded with Human Umbilical Vein Endothelial Cells (HUVECs), cultured in vitro for 3 days and were evaluated for cell viability and morphology. The results showed that composite scaffolds had adjustable mechanical strength and favorable biocompatibility, which is important in the future clinical application of Tissue-engineered vascular grafts (TEVGs). Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Science.gov (United States)

    Samajdar, D. P.; Dhar, S.

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1−xBix and InSb1−xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E − energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. PMID:24592181

  2. Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

    Science.gov (United States)

    Samajdar, D P; Dhar, S

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  3. Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

    Science.gov (United States)

    Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

    2014-04-01

    Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

  4. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

  5. Optimization of the confinement energy of quantum-wire states in T-shaped GaAs/AlxGa1-xAs structures

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher

    1996-01-01

    We report on an optimization of the wire confinement energies of the confined electronic states at the T-shaped intersection of GaAs and AlxGa1-xAs quantum wells. These structures can be produced by the cleaved edge overgrowth technique. We present an analytical model for the confinement to give ...

  6. Electrical characterization of InAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Botha, L.; Shamba, P.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2008-07-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10{sup 18} cm{sup -3}) to strongly p-doped (p{proportional_to}10{sup 19} cm{sup -3}) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Electrical characterization of InAs thin films

    International Nuclear Information System (INIS)

    Botha, L.; Shamba, P.; Botha, J.R.

    2008-01-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10 18 cm -3 ) to strongly p-doped (p∝10 19 cm -3 ) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. STRUCTURAL AND TECHNOLOGICAL ASPECTS OF DECREASE IN WIRE ANNEALING AT A TWIST OF A HIGH-STRENGTH METAL CORD

    Directory of Open Access Journals (Sweden)

    V. Р. Fetisov

    2016-01-01

    Full Text Available Deformation by drawing with the raised share of the squeezing tension and application of additional deformation with small degrees in the line of a drawing camp allow to minimize a wire annealing of a cold-deformed wire during a twist of a highstrength metal cord.

  9. APPLICATION OF THE X-RAY STRUCTURE ANALYSIS FOR IMPROVEMENT OF TECHNOLOGICAL PROCES- SES OF WIRE PRODUCTION AT BMZ

    Directory of Open Access Journals (Sweden)

    D. V. Kuznetsov

    2012-01-01

    Full Text Available The X-ray diffraction methods of qualitative and quantative analysis of phase composition of the brass coating, scale on the surface of brass wire, rod, patented wire, methods of determining the characteristics of the microstrains the lattice ferritic matrix pearlitic high-carbon steel, are explored.

  10. Growth and electrical characterization of Zn-doped InAs and InAs1-xSbx

    International Nuclear Information System (INIS)

    Venter, A.; Shamba, P.; Botha, L.; Botha, J.R.

    2009-01-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs 1-x Sb x layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs 1-x Sb x epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  11. In situ surface and interface study of crystalline (3×1)-O on InAs

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Xiaoye, E-mail: xxq102020@utdallas.edu; Wallace, Robert M., E-mail: rmwallace@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wang, Wei-E.; Rodder, Mark S. [Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, Texas 78754 (United States)

    2016-07-25

    The oxidation behavior of de-capped InAs (100) exposed to O{sub 2} gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In{sub 2}O and As{sub 2}O{sub 3}. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO{sub 2} is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO{sub 2} growth at 100 °C.

  12. On the processing of InAs and InSb photodiode applications

    Energy Technology Data Exchange (ETDEWEB)

    Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

    2008-07-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. On the processing of InAs and InSb photodiode applications

    International Nuclear Information System (INIS)

    Odendaal, V.; Botha, J.R.; Auret, F.D.

    2008-01-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Studies on the controlled growth of InAs nanostructures on scission surfaces

    International Nuclear Information System (INIS)

    Bauer, J.

    2006-01-01

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {110}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {110}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  15. Structural homeostasis in the nervous system: A balancing act for wiring plasticity and stability

    Directory of Open Access Journals (Sweden)

    Jun eYin

    2015-01-01

    Full Text Available Experience-dependent modifications of neural circuits provide the cellular basis for functional adaptation and learning, while presenting significant challenges to the stability of neural networks. The nervous system copes with these perturbations through a variety of compensatory mechanisms with distinct spatial and temporal profiles. Mounting evidence suggests that structural plasticity, through modifications of the number and structure of synapses, or changes in local and long-range connectivity, might contribute to the stabilization of network activity and serve as an important component of the homeostatic regulation of the nervous system. Conceptually similar to the homeostatic regulation of synaptic strength and efficacy, homeostatic structural plasticity has a profound and lasting impact on the intrinsic excitability of the neuron and circuit properties, yet remains largely unexplored. In this review, we examine recent reports describing structural modifications associated with functional compensation in both developing and adult nervous systems, and discuss the potential role for structural homeostasis in maintaining network stability and its implications in physiological and pathological conditions of the nervous systems.

  16. A practical monitoring system for the structural safety of mega-trusses using wireless vibrating wire strain gauges.

    Science.gov (United States)

    Park, Hyo Seon; Lee, Hwan Young; Choi, Se Woon; Kim, Yousok

    2013-12-16

    Sensor technologies have been actively employed in structural health monitoring (SHM) to evaluate structural safety. To provide stable and real-time monitoring, a practical wireless sensor network system (WSNS) based on vibrating wire strain gauges (VWSGs) is proposed and applied to a building under construction. In this WSNS, the data measured from each VWSG are transmitted to the sensor node via a signal line and then transmitted to the master node through a short-range wireless communication module (operating on the Industrial, Scientific, and Medical (ISM) band). The master node also employs a long-range wireless communication module (Code Division Multiple Access-CDMA) to transmit the received data from the sensor node to a server located in a remote area, which enables a manager to examine the measured data in real time without any time or location restrictions. In this study, a total of 48 VWSGs, 14 sensor nodes, and seven master nodes were implemented to measure long-term strain variations of mega-trusses in an irregular large-scale building under construction. Based on strain data collected over a 16-month period, a quantitative evaluation of the construction process was performed to determine the aspects that exhibit the greatest influence on member behavior and to conduct a comparison with numerical simulation results. The effect of temperature stress on the structural elements was also analyzed. From these observations, the feasibility of a long-term WSNS based on VWSGs to evaluate the structural safety of an irregular building under construction was confirmed.

  17. A Practical Monitoring System for the Structural Safety of Mega-Trusses Using Wireless Vibrating Wire Strain Gauges

    Directory of Open Access Journals (Sweden)

    Hyo Seon Park

    2013-12-01

    Full Text Available Sensor technologies have been actively employed in structural health monitoring (SHM to evaluate structural safety. To provide stable and real-time monitoring, a practical wireless sensor network system (WSNS based on vibrating wire strain gauges (VWSGs is proposed and applied to a building under construction. In this WSNS, the data measured from each VWSG are transmitted to the sensor node via a signal line and then transmitted to the master node through a short-range wireless communication module (operating on the Industrial, Scientific, and Medical (ISM band. The master node also employs a long-range wireless communication module (Code Division Multiple Access—CDMA to transmit the received data from the sensor node to a server located in a remote area, which enables a manager to examine the measured data in real time without any time or location restrictions. In this study, a total of 48 VWSGs, 14 sensor nodes, and seven master nodes were implemented to measure long-term strain variations of mega-trusses in an irregular large-scale building under construction. Based on strain data collected over a 16-month period, a quantitative evaluation of the construction process was performed to determine the aspects that exhibit the greatest influence on member behavior and to conduct a comparison with numerical simulation results. The effect of temperature stress on the structural elements was also analyzed. From these observations, the feasibility of a long-term WSNS based on VWSGs to evaluate the structural safety of an irregular building under construction was confirmed.

  18. Alloy formation during InAs nanowire growth on GaAs(111)

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, Anton; Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. A possible way to obtain nanowires is the growth in molecular beam epitaxy on the (111)B oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of InAs nanowires grown on GaAs substrates covered by different oxide-layers using X-ray diffraction. In this contribution, we report on the structural investigation of InAs nanowires grown via an In droplet on GaAs substrates covered by different oxide layers using X-ray diffraction. Using a combination of symmetric and asymmetric X-ray diffraction, we observe that for growth on a defective oxide layer, alloy formation takes place and a large amount of InGaAs is formed, whereas for growth on an initially smooth oxide layer, only pure InAs is formed.

  19. Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Yasuhiro [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Tex, David M.; Kanemitsu, Yoshihiko, E-mail: kanemitu@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Japan Science and Technology Agency, CREST, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kamiya, Itaru [Toyota Technological Institute, Nagoya, Aichi 468-8511 (Japan)

    2015-07-06

    The carrier upconversion dynamics in InAs quantum nanostructures are studied for intermediate-band solar-cell applications via ultrafast photoluminescence and photocurrent (PC) spectroscopy based on femtosecond excitation correlation (FEC) techniques. Strong upconverted PC-FEC signals are observed under resonant excitation of quantum well islands (QWIs), which are a few monolayer-thick InAs quantum nanostructures. The PC-FEC signal typically decays within a few hundred picoseconds at room temperature, which corresponds to the carrier lifetime in QWIs. The photoexcited electron and hole lifetimes in InAs QWIs are evaluated as functions of temperature and laser fluence. Our results provide solid evidence for electron–hole–hole Auger process, dominating the carrier upconversion in InAs QWIs at room temperature.

  20. Spin Injection, Manipulation, and Detection, in InAs Nanodevices

    Science.gov (United States)

    Jones, G. M.; Jonker, B. T.; Bennett, B. R.; Meyer, J. R.; Twigg, M. E.; Reinecke, T. L.; Park, D.; Pereverzev, S. V.; Badescu, C. S.; Li, C. H.; Hanbicki, A. T.; van'terve, O.; Vurgaftman, I.

    2008-03-01

    In this talk the authors will discuss their progress using InAs heterostructures to produce spin-polarized injection and detection, as well as manipulation of coherent spin-polarized electrons for a spin-based FET (SpinFET). High-quality n-type InAs heterostructures demonstrate many favorable characteristics necessary to the study of spin dynamics, including 2DEG's with small effective mass (m* = 0.023) and large g-factor (g = -15). Previously, high-mobility InAs heterostructures have been demonstrated in which electrons pass ballistically over hundreds of nanometers up to room temperature. Our devices seek to exploit the strong Spin-Orbit effect present in InAs to manipulate coherent spin-polarized electrons during transport, by producing perpendicular electric field using isolated top-gates fabricated over the electron transport region.

  1. Electronic instabilities and structural fluctuations in self-assembled atom wires

    NARCIS (Netherlands)

    Snijders, P.C.

    2006-01-01

    One-dimensional (1D) solid state systems can behave drastically different from their higher dimensional counterparts. Increased interactions can produce electronic and/or structural instabilities. In this respect, the following fundamental questions are important for a proper understanding of the

  2. Band structure of a three-dimensional topological insulator quantum wire in the presence of a magnetic field.

    Science.gov (United States)

    Liu, Zhe; Jiang, Liwei; Zheng, Yisong

    2016-07-13

    By means of a numerical diagonalization approach, we calculate the electronic structure of a three-dimensional topological insulator (3DTI) quantum wire (QW) in the presence of a magnetic field. The QW can be viewed as a 3DTI film with lateral surfaces, when its rectangular cross section has a large aspect ratio. Our calculation indicates that nonchiral edge states emerge because of the confined states at the lateral surfaces. These states completely cover the valence band region among the Landau levels, which reasonably account for the absence of the [Formula: see text] quantum Hall effect in the relevant experimental works. In an ultrathin 3DTI film, inversion between the electron-type and hole-type bands occurs, which leads to the so-called pseudo-spin Hall effect. In a 3DTI QW with a square cross section, a tilting magnetic field can establish well-defined Landau levels in all four surfaces. In such a case, the quantum Hall edge states are localized at the square corners, characterized by the linearly crossing one-dimensional band profile. And they can be shifted between the adjacent corners by simply rotating the magnetic field.

  3. Structure of Polymer Fibers Fabricated by Electrospinning Method Utilizing a Metal Wire Electrode in a Capillary Tube

    Science.gov (United States)

    Onozuka, Shintaro; Hoshino, Rikiya; Mizuno, Yoshinori; Shinbo, Kazunari; Ohdaira, Yasuo; Baba, Akira; Kato, Keizo; Kaneko, Futao

    We fabricated electrospun poly (vinylalcohol) (PVA) fibers using a copper wire electrode in Teflon capillary tube, and the SEM images were observed. The apparatus in this method is reasonable, and needed volume of polymer solution and distance between the electrodes can be largely reduced compared to conventional method. The wire electrode tip position in the capillary tube is also important in this method and should be close to the polymer solution surface.

  4. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

    Science.gov (United States)

    Dionízio Moreira, M; Venezuela, P; Miwa, R H

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  5. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    International Nuclear Information System (INIS)

    Dionizio Moreira, M; Venezuela, P; Miwa, R H

    2010-01-01

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  6. Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi-junction solar cells

    Science.gov (United States)

    Cho, Hirofumi; Toprasertpong, Kasidit; Sodabanlu, Hassanet; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki

    2017-04-01

    Wire on Well (WoW) structure embedded in a matrix is naturally formed by growing InxGa1-xAs/GaAs1-yPy strained multiple quantum wells (MQW) on vicinal substrates and employing triethylgallium (TEGa) as a precursor in low-temperature MOVPE. The structure is useful for the subcell in current-matched mult-junction solar cells with lattice-matched materials because of its ability of band-gap tuning. In this research, high density and uniform In0.30Ga0.70As/GaAs0.6P0.4 WoW was obtained up to 200 stacks and its structure was analyzed by X-ray diffraction reciprocal space mapping, atomic force microscopy and scanning transmission electron microscopy. The structure of the wire can be controlled by changing the equivalent layer thicknesses of In0.30Ga0.70As and GaAs0.6P0.4. The photoluminescence peak from the WoW shifted according to the size of InGaAs wires and the intensity was dependent on the accumulation of lattice-mismatch stress.

  7. Wire Mesh Dampers for Semi-Floating Ring Bearings in Automotive Turbochargers: Measurements of Structural Stiffness and Damping Parameters

    Directory of Open Access Journals (Sweden)

    Keun Ryu

    2018-04-01

    Full Text Available The current work introduces a new semi-floating ring bearing (SFRB system developed for improving the rotordynamic and vibration performance of automotive turbochargers (TCs at extreme operation conditions, such as high temperature, severe external force excitation, and large rotor imbalance. The new bearing design replaces outer oil films, i.e., squeeze film dampers (SFDs, in TC SFRBs with wire mesh dampers (WMDs. This SFRB configuration integrating WMDs aims to implement reliable mechanical components, as an inexpensive and simple alternative to SFDs, with consistent and superior damping capability, as well as predictable forced performance. Since WMDs are in series with the inner oil films of SFRBs, experimentally determined force coefficients of WMDs are of great importance in the design process of TC rotor-bearing systems (RBSs. Presently, the measurements of applied static load and ensuing deflection determine the structural stiffnesses of the WMDs. The WMD damping parameters, including dissipated energy, loss factor, and dry friction coefficient, are estimated from the area of the distinctive local hysteresis loop of the load versus WMD displacement data recorded during consecutive loading-unloading cycles as a function of applied preload with a constant amplitude of motion. The changes in WMD loss factor and dry friction coefficient due to increases in preload are more significant for the WMDs with lower density. The present work shows, to date, the most comprehensive measurements of static load characteristics on the WMDs for application into small automotive TCs. More importantly, the extensive test measurements of WMD deflection versus increasing static loads will aid to anchor predictions of future computation model.

  8. X-ray diffraction analysis of InAs nanowires

    International Nuclear Information System (INIS)

    Davydok, Anton

    2013-01-01

    Semiconductor nanowires have attracted great interest as building blocks for future electronic and optoelectronic devices. The variability of the growth process opens the opportunity to control and combine the various properties tailoring for specific application. It was shown that the electrical and optical characteristics of the nanowires are strongly connected with their structure. Despite intensive research in this field, the growth process is still not fully understood. In particular, extensive real structure investigations are required. Most of the reports dedicated on the structural researches are based on the results of scanning electron microscopy (SEM) or transmission electron microscopy (TEM). SEM provides an image of the surface with nanostructures and is mainly used to describe the morphology of the sample, but it does not bring information about the internal structure, phase composition and defect structure. At the same time, the internal structure can be examined by TEM down to atomic scale. TEM image of good quality are very expensive due to the efforts in sample preparation and in localisation of a single object. All these aspects make the statistical structural analysis difficult. In the present work, X-ray diffraction analysis has been applied for structural investigation of InAs nanowires grown by different techniques. Using various X-ray diffraction geometries, the nanowire systems were investigated in terms of the lattice parameters, phase composition, strains and displacement fields and stacking defects. In particular, realizing grazing incidence diffraction and controlling the penetration depth of X-ray beam, we characterized sample series grown by Au-assisted metal organic phase epitaxy on GaAs [111]B substrate with different growth time. According to the results of SEM and X-ray investigations, a model of the growth process has been proposed. A more detailed analysis was performed on InAs nanowires grown by molecular beam epitaxy (MBE) on

  9. Dislocation-based plasticity and strengthening mechanisms in sub-20 nm lamellar structures in pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Hansen, Niels; Godfrey, Andrew

    2016-01-01

    The tensile properties and the deformation microstructure of pearlitic steel (0.8 wt % C) have been quantified in wires drawn to strains in the range from 3.7 to 5.4, having a flow stress in the range from 3.5 to 4.5 GPa. With increasing strain the interlamellar spacing (ILS) decreases from about...... mechanism in the wire and three strengthening mechanisms are applied: boundary strengthening, dislocation strengthening and solid solution hardening with their relative contributions to the total flow stress which change as the strain is increased. Based on linear additivity good correspondence between...

  10. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    International Nuclear Information System (INIS)

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  11. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  12. Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

    Science.gov (United States)

    Colocci, M.; Vinattieri, A.; Lippi, L.; Bogani, F.; Rosa-Clot, M.; Taddei, S.; Bosacchi, A.; Franchi, S.; Frigeri, P.

    1999-01-01

    Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is not present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering.

  13. 20 CFR 668.860 - What cash management procedures apply to INA grant funds?

    Science.gov (United States)

    2010-04-01

    ... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What cash management procedures apply to INA... Administrative Requirements § 668.860 What cash management procedures apply to INA grant funds? INA grantees must... implement the Cash Management Improvement Act, found at 31 CFR part 205, apply by law to most recipients of...

  14. Application of irradiated wire

    International Nuclear Information System (INIS)

    Uda, I.; Kozima, K.; Suzuki, S.; Tada, S.; Torisu, S.; Veno, K.

    1984-01-01

    Rubber insulated wires are still useful for internal wiring in motor vehicles and electrical equipment because of flexibility and toughness. Irradiated cross-linked rubber materials have been successfully introduced for use with fusible link wire and helically coiled cord

  15. Noncontextual Wirings

    Science.gov (United States)

    Amaral, Barbara; Cabello, Adán; Cunha, Marcelo Terra; Aolita, Leandro

    2018-03-01

    Contextuality is a fundamental feature of quantum theory necessary for certain models of quantum computation and communication. Serious steps have therefore been taken towards a formal framework for contextuality as an operational resource. However, the main ingredient of a resource theory—a concrete, explicit form of free operations of contextuality—was still missing. Here we provide such a component by introducing noncontextual wirings: a class of contextuality-free operations with a clear operational interpretation and a friendly parametrization. We characterize them completely for general black-box measurement devices with arbitrarily many inputs and outputs. As applications, we show that the relative entropy of contextuality is a contextuality monotone and that maximally contextual boxes that serve as contextuality bits exist for a broad class of scenarios. Our results complete a unified resource-theoretic framework for contextuality and Bell nonlocality.

  16. Influence of nitrogen on the growth and the properties of InAs quantum dots

    International Nuclear Information System (INIS)

    Schumann, O.

    2004-01-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  17. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

    DEFF Research Database (Denmark)

    Krizek, Filip; Kanne, Thomas; Razmadze, Davydas

    2017-01-01

    . Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show......Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism...

  18. Electrodeposition of nickel nano wire arrays

    International Nuclear Information System (INIS)

    Nur Ubaidah Saidin; Kok Kuan Ying; Ng Inn Khuan; Nurazila Mat Zali; Siti Salwa Zainal Abidin

    2010-01-01

    Synthesis, characterization and assembly of one-dimensional nickel nano wires prepared by template directed electrodeposition are discussed in this paper. Parallel arrays of high aspect ratio nickel nano wires were electrodeposited using electrolytes with different cations and pH. The nano wires were characterized using X-ray diffractometry and scanning electron microscopy. It was found that the orientations of the electro deposited Ni nano wires were governed by the deposition current and the electrolyte conditions. Free standing nickel nano wires can be obtained by dissolving the template. Due to the magnetic nature of the nano wires, magnetic alignment was employed to assemble and position the free standing nano wires in the device structure. (author)

  19. Concurrent growth of InSe wires and In2O3 tulip-like structures in the Au-catalytic vapour-liquid-solid process

    International Nuclear Information System (INIS)

    Taurino, A; Signore, M A

    2015-01-01

    In this work, the concurrent growth of InSe and In 2 O 3 nanostructures, obtained by thermal evaporation of InSe powders on Au-covered Si substrates, has been investigated by scanning and transmission electron microscopy techniques. The vapour-solid and Au catalytic vapour-liquid-solid growth mechanisms, responsible of the simultaneous development of the two different types of nanostructures, i.e. InSe wires and In 2 O 3 tulip-like structures respectively, are discussed in detail. The thermodynamic processes giving rise to the obtained morphologies and materials are explained. (paper)

  20. Concurrent growth of InSe wires and In2O3 tulip-like structures in the Au-catalytic vapour-liquid-solid process

    Science.gov (United States)

    Taurino, A.; Signore, M. A.

    2015-06-01

    In this work, the concurrent growth of InSe and In2O3 nanostructures, obtained by thermal evaporation of InSe powders on Au-covered Si substrates, has been investigated by scanning and transmission electron microscopy techniques. The vapour-solid and Au catalytic vapour-liquid-solid growth mechanisms, responsible of the simultaneous development of the two different types of nanostructures, i.e. InSe wires and In2O3 tulip-like structures respectively, are discussed in detail. The thermodynamic processes giving rise to the obtained morphologies and materials are explained.

  1. Single-photon generation with InAs quantum dots

    International Nuclear Information System (INIS)

    Santori, Charles; Fattal, David; Vuckovic, Jelena; Solomon, Glenn S; Yamamoto, Yoshihisa

    2004-01-01

    Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed

  2. Stimulated Emission from InAs (GaAs Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region

    Directory of Open Access Journals (Sweden)

    Dusan Pudis

    2002-01-01

    Full Text Available Our study is focused on the optical and electronic properties of InAs (GaAs monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temperature electroluminescence measurements of InAs (GaAs/Al0.33GA0.67As revealed the excellent emission spectra in the visib le range 630-690 nm. The stimulated emission from these structures across their cleavage planes has been observed at low  temperatures what is highly interesting for potential device applications.

  3. InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

    International Nuclear Information System (INIS)

    Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mourão, R. T.; Pires, M. P.; Micha, D. N.; Xie, H.; Fischer, A. M.; Ponce, F. A.

    2014-01-01

    InAs quantum dot multilayers have been grown using Al x Ga 1−x As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure

  4. Wire communication engineering

    International Nuclear Information System (INIS)

    Son, Byeong Tae

    1997-02-01

    This book describes wire telecommunication engineering/ It is divided into eleven chapter, which deal with Introduction with development of telecommunication, voice and sound wave and communication network, Telegraphy with summary of telegraphy, code of telegraphy, communication speed, morse and telex, Telephone on structure, circuit and image telephone, Traffic on telecommunication traffic, transmission of line about theory, cable line and loaded cable, carrier communication with carrier telegraphy and carrier telephone, optical communication with types, structure, specialty, laser and equipment, DATA, Mobile telecommunication on summary, mobile telephone, radio paging and digital mobile telecommunication, ISDN with channel of ISDN, and service of ISDN, and design of telecommunication.

  5. Stabilized superconductive wires

    International Nuclear Information System (INIS)

    Randall, R.N.; Wong, J.

    1976-01-01

    A stable, high field, high current conductor is produced by packing multiple, multi-layer rods of a bronze core and niobium or vanadium inner jacket and copper outer jacket into a pure copper tube or other means for forming a pure copper matrix, sealing, working the packed tube to a wire, and by diffusion, heat treating to form a type II superconducting, Beta-Wolfram structure, intermetallic compound as a layer within each of several filaments derived from the rods. The layer of Beta-Wolfram structure compound may be formed in less than 2 h of diffusion heat treatment in a thickness of 0.5--2μ

  6. Cellular Structure Fabricated on Ni Wire by a Simple and Cost-Effective Direct-Flame Approach and Its Application in Fiber-Shaped Supercapacitors.

    Science.gov (United States)

    Wang, Zhihong; Cao, Fenhui; Chen, Kongfa; Yan, Yingming; Chen, Yifu; Zhang, Yaohui; Zhu, Xingbao; Wei, Bo; Xiong, Yueping; Lv, Zhe

    2018-03-09

    Cellular metals with the large surface/volume ratios and excellent electrical conductivity are widely applicable and have thus been studied extensively. It is highly desirable to develop a facile and cost-effective process for fabrication of porous metallic structures, and yet more so for micro/nanoporous structures. A direct-flame strategy is developed for in situ fabrication of micron-scale cellular architecture on a Ni metal precursor. The flame provides the required heat and also serves as a fuel reformer, which provides a gas mixture of H 2 , CO, and O 2 for redox treatment of metallic Ni. The redox processes at elevated temperatures allow fast reconstruction of the metal, leading to a cellular structure on Ni wire. This process is simple and clean and avoids the use of sacrificial materials or templates. Furthermore, nanocrystalline MnO 2 is coated on the microporous Ni wire (MPNW) to form a supercapacitor electrode. The MnO 2 /MPNW electrode and the corresponding fiber-shaped supercapacitor exhibit high specific capacitance and excellent cycling stability. Moreover, this work provides a novel strategy for the fabrication of cellular metals and alloys for a variety of applications, including catalysis, energy storage and conversion, and chemical sensing. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

    Directory of Open Access Journals (Sweden)

    Maronchuk I. E.

    2008-12-01

    Full Text Available Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

  8. Wire-in-tube structure fabricated by single capillary electrospinning via nanoscale Kirkendall effect: the case of nickel-zinc ferrite.

    Science.gov (United States)

    Fu, Jiecai; Zhang, Junli; Peng, Yong; Zhao, Changhui; He, Yongmin; Zhang, Zhenxing; Pan, Xiaojun; Mellors, Nigel J; Xie, Erqing

    2013-12-21

    Wire-in-tube structures have previously been prepared using an electrospinning method by means of tuning hydrolysis/alcoholysis of a precursor solution. Nickel-zinc ferrite (Ni0.5Zn0.5Fe2O4) nanowire-in-nanotubes have been prepared as a demonstration. The detailed nanoscale characterization, formation process and magnetic properties of Ni0.5Zn0.5Fe2O4 nanowire-in-nanotubes has been studied comprehensively. The average diameters of the outer tubes and inner wires of Ni0.5Zn0.5Fe2O4 nanowire-in-nanotubes are around 120 nm and 42 nm, respectively. Each fully calcined individual nanowire-in-nanotube, either the outer-tube or the inner-wire, is composed of Ni0.5Zn0.5Fe2O4 monocrystallites stacked along the longitudinal direction with random orientation. The process of calcining electrospun polymer composite nanofibres can be viewed as a morphologically template nucleation and precursor diffusion process. This allows the nitrates precursor to diffuse toward the surface of the nanofibres while the oxides (decomposed from hydroxides and nitrates) products diffuse to the core region of the nanofibres; the amorphous nanofibres transforming thereby into crystalline nanowire-in-nanotubes. In addition, the magnetic properties of the Ni0.5Zn0.5Fe2O4 nanowire-in-nanotubes were also examined. It is believed that this nanowire-in-nanotube (sometimes called core-shell) structure, with its uniform size and well-controlled orientation of the long nanowire-in-nanotubes, is particularly attractive for use in the field of nano-fluidic devices and nano-energy harvesting devices.

  9. Direct Identification of Atomic-Like Electronic Levels in InAs Nano crystal Quantum Dots

    International Nuclear Information System (INIS)

    Millo, O.; Katz, D.

    1999-01-01

    The size dependent level structure of InAs nano crystals in the range 2-7 nm in diameter is investigated using both tunneling and optical spectroscopies. The tunneling measurements are performed using a cryogenic scanning tunneling microscope on individual nano crystals that, are attached to a gold substrate via dithiol molecules. The tunneling I-V characteristics manifest an interplay between single electron charging and quantum size effects. We are able to directly identify quantum confined states of isolated InAs nano crystals having s and p symmetries. These states are observed in the I-V curves as two and six-fold single electron charging multiplets. Excellent agreement is found between the strongly allowed optical transitions [1] and the spacing of levels detected in the tunneling experiment. This correlation provides new information on the quantum-dot level structure, from which we conclude that the top-most valence band state has both s and p characteristics. The interplay between level structure singles electron charging of the nano crystals obeys an atomic-like Aufbau sequential electron level occupation

  10. Growth and characterization of InAs columnar quantum dots on GaAs substrate

    International Nuclear Information System (INIS)

    Li, L. H.; Patriarche, G.; Rossetti, M.; Fiore, A.

    2007-01-01

    The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nmx20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers

  11. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    International Nuclear Information System (INIS)

    Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

    2006-01-01

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

  12. X-ray characterization Si-doped InAs nanowires grown on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)

    2011-07-01

    Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.

  13. Wire breakage in SLC wire profile monitors

    International Nuclear Information System (INIS)

    Field, C.; McCormick, D.; Raimondi, P.; Ross, M.

    1998-05-01

    Wire scanning beam profile monitors are used at the Stanford Linear Collider (SLC) for emittance preservation control and beam optics optimization. Twenty such scanners have proven most useful for this purpose and have performed a total of 1.5 million scans in the 4 to 6 years since their installation. Most of the essential scanners are equipped with 20 to 40 microm tungsten wires. SLC bunch intensities and sizes often exceed 2 x 10 7 particles/microm 2 (3C/m 2 ). The authors believe that this has caused a number of tungsten wire failures that appear at the ends of the wire, near the wire support points, after a few hundred scans are accumulated. Carbon fibers, also widely used at SLAC, have been substituted in several scanners and have performed well. In this paper, the authors present theories for the wire failure mechanism and techniques learned in reducing the failures

  14. Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory.

    Science.gov (United States)

    Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-Ichi; Bowler, David R; Miki, Kazushi

    2017-04-20

    We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from [Formula: see text] to [Formula: see text] Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.

  15. Past and Present Development of INA's Liberalisation and Privatisation

    International Nuclear Information System (INIS)

    Lesic, A.; Stimac, B.

    2001-01-01

    The paper deals with the historical development aspects of the Croatian oil and gas industry INA. It describes the period from the very start of oil and gas production to the data of establishment of the Croatian state and afterwards. Some important milestones and political and economic events that impacted the development of the Croatian oil industry are described and commented, including changes toward liberalisation and privatisation of the oil and gas sector. The paper emphasises the role of INA in the Croatian economy and proposes some solutions for the liberalisation process and privatisation of the company that could prevent undesirable effects of privatisation and protect the interests of Croatia in the energy sector which is one of the main sectors of economy having influence on other production and service sectors and their competitiveness.(author)

  16. INA's Preparations for Liberalised Energy Market and Privatisation

    International Nuclear Information System (INIS)

    Dragicevic, T.; Kolundzic, S.

    2001-01-01

    Before opening of the market, energy entities must carry out numerous preparations in order to be ready for challenges of a competitive environment. Some preparations refer to legal and organisational issues, but many of them encompass reengineering of business processes, cost reduction schemes and various improvement measures aimed at maintenance or acquisition of a competitive advantage. INA is actively pursuing some of the above measures, but now, by the end of 2001, we also have to deal with preparations for privatisation. These two processes have some important common elements, competitiveness being certainly one of them. INA must work toward improving its competitive strength in the gas sector, in refining, in marketing of oil products, but also in various supporting activities. However, there are constraints that we have to observe, mainly related to social issues.(author)

  17. Reconstruction of an InAs nanowire using geometric tomography

    DEFF Research Database (Denmark)

    Pennington, Robert S.; König, Stefan; Alpers, Andreas

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

  18. Base Information Transport Infrastructure Wired (BITI Wired)

    Science.gov (United States)

    2016-03-01

    2016 Major Automated Information System Annual Report Base Information Transport Infrastructure Wired (BITI Wired) Defense Acquisition Management...Combat Information Transport System program was restructured into two pre-Major Automated Information System (pre-MAIS) components: Information...Major Automated Information System MAIS OE - MAIS Original Estimate MAR – MAIS Annual Report MDA - Milestone Decision Authority MDD - Materiel

  19. Wire bonding in microelectronics

    CERN Document Server

    Harman, George G

    2010-01-01

    Wire Bonding in Microelectronics, Third Edition, has been thoroughly revised to help you meet the challenges of today's small-scale and fine-pitch microelectronics. This authoritative guide covers every aspect of designing, manufacturing, and evaluating wire bonds engineered with cutting-edge techniques. In addition to gaining a full grasp of bonding technology, you'll learn how to create reliable bonds at exceedingly high yields, test wire bonds, solve common bonding problems, implement molecular cleaning methods, and much more. Coverage includes: Ultrasonic bonding systems and technologies, including high-frequency systems Bonding wire metallurgy and characteristics, including copper wire Wire bond testing Gold-aluminum intermetallic compounds and other interface reactions Gold and nickel-based bond pad plating materials and problems Cleaning to improve bondability and reliability Mechanical problems in wire bonding High-yield, fine-pitch, specialized-looping, soft-substrate, and extreme-temperature wire bo...

  20. 22 CFR 40.68 - Aliens subject to INA 222(g).

    Science.gov (United States)

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

  1. Komunikační mix Svatebního salonu INA

    OpenAIRE

    Rybníčková, Michala

    2015-01-01

    Rybníčková, M. Marketing mix for Wedding Boutique INA. Bachelor thesis, Brno: Mendel university in Brno, 2015 This Bechelor thesis focuses on the marketing mix for the company Wedding Boutique INA. Survey results are used to evaluate the effectiveness of marketing tools currently used by INA. Furthermore, the results are used to recommend improvements to the marketing mix. Thesis also includes calculation of costs and scheduling for the year 2015.

  2. Water Desalination with Wires

    NARCIS (Netherlands)

    Porada, S.; Sales, B.B.; Hamelers, H.V.M.; Biesheuvel, P.M.

    2012-01-01

    We show the significant potential of water desalination using a novel capacitive wire-based technology in which anode/cathode wire pairs are constructed from coating a thin porous carbon electrode layer on top of electrically conducting rods (or wires). By alternately dipping an array of electrode

  3. Plastic deformation of 2D crumpled wires

    International Nuclear Information System (INIS)

    Gomes, M A F; Donato, C C; Brito, V P; Coelho, A S O

    2008-01-01

    When a single long piece of elastic wire is injected through channels into a confining two-dimensional cavity, a complex structure of hierarchical loops is formed. In the limit of maximum packing density, these structures are described by several scaling laws. In this paper this packing process is investigated but using plastic wires which give rise to completely irreversible structures of different morphology. In particular, the plastic deformation from circular to oblate configurations of crumpled wires is experimentally studied, obtained by the application of an axial strain. Among other things, it is shown that in spite of plasticity, irreversibility and very large deformations, scaling is still observed.

  4. PS wire chamber

    CERN Multimedia

    1970-01-01

    A wire chamber used at CERN's Proton Synchrotron accelerator in the 1970s. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  5. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

    Science.gov (United States)

    Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

    2016-12-01

    The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

  6. Effect of wire shape on wire array discharge

    Energy Technology Data Exchange (ETDEWEB)

    Shimomura, N.; Tanaka, Y.; Yushita, Y.; Nagata, M. [University of Tokushima, Department of Electrical and Electronic Engineering, Tokushima (Japan); Teramoto, Y.; Katsuki, S.; Akiyama, H. [Kumamoto University, Department of Electrical and Computer Engineering, Kumamoto (Japan)

    2001-09-01

    Although considerable investigations have been reported on z-pinches to achieve nuclear fusion, little attention has been given from the point of view of how a wire array consisting of many parallel wires explodes. Instability existing in the wire array discharge has been shown. In this paper, the effect of wire shape in the wire array on unstable behavior of the wire array discharge is represented by numerical analysis. The claws on the wire formed in installation of wire may cause uniform current distribution on wire array. The effect of error of wire diameter in production is computed by Monte Carlo Method. (author)

  7. Effect of wire shape on wire array discharge

    International Nuclear Information System (INIS)

    Shimomura, N.; Tanaka, Y.; Yushita, Y.; Nagata, M.; Teramoto, Y.; Katsuki, S.; Akiyama, H.

    2001-01-01

    Although considerable investigations have been reported on z-pinches to achieve nuclear fusion, little attention has been given from the point of view of how a wire array consisting of many parallel wires explodes. Instability existing in the wire array discharge has been shown. In this paper, the effect of wire shape in the wire array on unstable behavior of the wire array discharge is represented by numerical analysis. The claws on the wire formed in installation of wire may cause uniform current distribution on wire array. The effect of error of wire diameter in production is computed by Monte Carlo Method. (author)

  8. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

    2011-01-01

    InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological...... and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical...... characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

  9. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    International Nuclear Information System (INIS)

    Kadkhodazadeh, S; Dunin-Borkowski, R E; Semenova, E S; Schubert, M; Yvind, K; Thuvander, M; Stiller, K M

    2011-01-01

    InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

  10. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

    Science.gov (United States)

    Vigneau, Florian; Zeng, Zaiping; Escoffier, Walter; Caroff, Philippe; Leturcq, Renaud; Niquet, Yann-Michel; Raquet, Bertrand; Goiran, Michel

    2018-03-01

    The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

  11. 20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

    Science.gov (United States)

    2010-04-01

    ... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

  12. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

    2016-01-01

    on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro...

  13. 20 CFR 668.710 - What planning documents must an INA grantee submit?

    Science.gov (United States)

    2010-04-01

    ... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What planning documents must an INA grantee... Planning/Funding Process § 668.710 What planning documents must an INA grantee submit? Each grantee... participant services and expenditures covering the two-year planning cycle. We will, in consultation with the...

  14. A soft lithographic approach to fabricate InAs nanowire field-effect transistors

    DEFF Research Database (Denmark)

    Madsen, Morten; Lee, S. H.; Shin, S.-H.

    2018-01-01

    -down approach and an epitaxial layer transfer process, using MBE-grown ultrathin InAs as a source wafer. The width of the InAs nanowires was controlled using solvent-assisted nanoscale embossing (SANE), descumming, and etching processes. By optimizing these processes, NWs with a width less than 50 nm were...

  15. Deformable wire array: fiber drawn tunable metamaterials

    DEFF Research Database (Denmark)

    Fleming, Simon; Stefani, Alessio; Tang, Xiaoli

    2017-01-01

    By fiber drawing we fabricate a wire array metamaterial, the structure of which can be actively modified. The plasma frequency can be tuned by 50% by compressing the metamaterial; recovers when released and the process can be repeated.......By fiber drawing we fabricate a wire array metamaterial, the structure of which can be actively modified. The plasma frequency can be tuned by 50% by compressing the metamaterial; recovers when released and the process can be repeated....

  16. Upotreba začina u proizvodnji tradicionalnih sireva

    OpenAIRE

    Josipović, Renata; Markov, Ksenija; Frece, Jadranka; Stanzer, Damir; Cvitković, Ante; Mrvčić, Jasna

    2016-01-01

    Sir je visoko cijenjeni mliječni proizvod u mnogim zemljama svijeta, a posebna pažnja pridaje se tradicionalnim sirevima, koji nisu samo hrana već i dio kulture i obilježja neke zemlje. Zahvaljujući zemljopisnom položaju i klimatsko-vegetacijskoj raznolikosti Republike Hrvatske, u pojedinim regijama razvijena je proizvodnja različitih tradicionalnih sireva uz upotrebu začina. Kod proizvodnje sireva sa začinima, začini se dodaju ili u sir koji se potom oblikuje, ili se sir omata lišćem začinsk...

  17. Nonlinear refraction at the absorption edge in InAs.

    Science.gov (United States)

    Poole, C D; Garmire, E

    1984-08-01

    The results of measurements of nonlinear refraction at the absorption edge in InAs between 68 and 90 K taken with an HF laser are compared with those of a band-gap resonant model in which the contribution of the light-hole band is included and found to account for more than 40% of the observed nonlinear refraction. A generalized expression for the nonlinear index is derived by using the complete Fermi-Dirac distribution function. Good agreement between theory and experiment is obtained, with no free parameters.

  18. Mountain Plains Learning Experience Guide: Electrical Wiring. Course: Electrical Wiring Rough-In.

    Science.gov (United States)

    Arneson, R.; And Others

    One of two individualized courses included in an electrical wiring curriculum, this course covers electrical installations that are generally hidden within the structure. The course is comprised of four units: (1) Outlet and Switch Boxes, (2) Wiring, (3) Service Entrance, and (4) Signal and Low Voltage Systems. Each unit begins with a Unit…

  19. Domain observations of Fe and Co based amorphous wires

    International Nuclear Information System (INIS)

    Takajo, M.; Yamasaki, J.

    1993-01-01

    Domain observations were made on Fe and Co based amorphous magnetic wires that exhibit a large Barkhausen discontinuity during flux reversal. Domain patterns observed on the wire surface were compared with those found on a polished section through the center of the wire. It was confirmed that the Fe based wire consists of a shell and core region as previously proposed, however, there is a third region between them. This fairly thick transition region made up of domains at an angle of about 45 degree to the wire axis clearly lacking the closure domains of the previous model. The Co based wire does not have a clear core and shell domain structure. The center of the wire had a classic domain structure expected of uniaxial anisotropy with the easy axis normal to the wire axis. When a model for the residual stress quenched-in during cooling of large Fe bars is applied to the wire, the expected anisotropy is consistent with the domain patterns in the Fe based wire, however, shape anisotropy still plays a dominant role in defining the wire core in the Co based wire

  20. INA-Rxiv: The Missing Puzzle in Indonesia’s Scientific Publishing Workflow

    Science.gov (United States)

    Rahim, R.; Irawan, D. E.; Zulfikar, A.; Hardi, R.; Arliman S, L.; Gultom, E. R.; Ginting, G.; Wahyuni, S. S.; Mesran, M.; Mahjudin, M.; Saputra, I.; Waruwu, F. T.; Suginam, S.; Buulolo, E.; Abraham, J.

    2018-04-01

    INA-Rxiv is the first Indonesia preprint server marking the new development initiated by the open science community. This study aimed at describing the development of INA-Rxiv and its conversations. It usedanalyzer of Inarxiv.id, WhatsApp Group Analyzer, and Twitter Analytics as the tools for data analysis complemented with observation.The results showed that INA-Rxiv users are growing because of the numerous discussions in social media, e.g.WhatsApp,as well as some other positive response of writers who have been using INA- Rxiv. The perspective of growth mindset and the implication of INA-Rxiv movement for filling up the gap in accelerating scientific dissemination process are presented at the end of this article.

  1. Towards plant wires

    OpenAIRE

    Adamatzky, Andrew

    2014-01-01

    In experimental laboratory studies we evaluate a possibility of making electrical wires from living plants. In scoping experiments we use lettuce seedlings as a prototype model of a plant wire. We approximate an electrical potential transfer function by applying direct current voltage to the lettuce seedlings and recording output voltage. We analyse oscillation frequencies of the output potential and assess noise immunity of the plant wires. Our findings will be used in future designs of self...

  2. Photovoltaic Wire, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project will investigate a new architecture for photovoltaic devices based on nanotechnology: photovoltaic wire. The...

  3. Charpak hemispherical wire chamber

    CERN Multimedia

    1970-01-01

    pieces. Mesures are of the largest one. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.

  4. 1998 wire development workshop proceedings

    International Nuclear Information System (INIS)

    1998-04-01

    This report consists of vugraphs of the presentations at the conference. The conference was divided into the following sessions: (1) First Generation Wire Development: Status and Issues; (2) First Generation Wire in Pre-Commercial Prototypes; (3) Second Generation Wire Development: Private Sector Progress and Issues; (4) Second Generation Wire Development: Federal Laboratories; and (5) Fundamental Research Issues for HTS Wire Development

  5. 1998 wire development workshop proceedings

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-04-01

    This report consists of vugraphs of the presentations at the conference. The conference was divided into the following sessions: (1) First Generation Wire Development: Status and Issues; (2) First Generation Wire in Pre-Commercial Prototypes; (3) Second Generation Wire Development: Private Sector Progress and Issues; (4) Second Generation Wire Development: Federal Laboratories; and (5) Fundamental Research Issues for HTS Wire Development.

  6. Superconducting wire for the T-15 toroidal magnet

    International Nuclear Information System (INIS)

    Klimenko, E.Yu.; Kruglov, V.S.; Martovetskij, N.N.

    1987-01-01

    Main characteristics of a wire designed for the T-15 toroidal superconducting magnet production are given. The wire with circulation cooling is a twist of 11 niobium-tin wires 1.5 mm in diameter, joined electrolytically by two copper tubes with 3 mm inside diameter. The wire is capable to carry 10 kA current in the 8.5 T induction field. Wire features and structures promote to receive high structural current density in winding: diffuseness of superconducting-to-normal transition increases wire stability, screw symmetry od a current-carrying core provides wire resistance to pulse longitudinal field effect at plasma current disruption, low bronze thermal conductivity in a twist increases stability to outside pulse perturbations

  7. Resonant tunneling of electrons in quantum wires

    International Nuclear Information System (INIS)

    Krive, I.V.; Shekhter, R.I.; Jonson, M.; Krive, I.V.

    2010-01-01

    We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron-electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.

  8. Wire Array Photovoltaics

    Science.gov (United States)

    Turner-Evans, Dan

    Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction

  9. Structuring of Functional Spider Silk Wires, Coatings, and Sheets by Self-Assembly on Superhydrophobic Pillar Surfaces.

    Science.gov (United States)

    Gustafsson, Linnea; Jansson, Ronnie; Hedhammar, My; van der Wijngaart, Wouter

    2018-01-01

    Spider silk has recently become a material of high interest for a large number of biomedical applications. Previous work on structuring of silk has resulted in particles (0D), fibers (1D), films (2D), and foams, gels, capsules, or microspheres (3D). However, the manufacturing process of these structures is complex and involves posttreatment of chemicals unsuitable for biological applications. In this work, the self-assembly of recombinant spider silk on micropatterned superhydrophobic surfaces is studied. For the first time, structuring of recombinant spider silk is achieved using superhydrophobic surfaces under conditions that retain the bioactivity of the functionalized silk. By tuning the superhydrophobic surface geometry and the silk solution handling parameters, this approach allows controlled generation of silk coatings, nanowires, and sheets. The underlying mechanisms and governing parameters are discussed. It is believed that the results of this work pave the way for fabrication of silk formations for applications including vehicles for drug delivery, optical sensing, antimicrobial coatings, and cell culture scaffolds. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

    Science.gov (United States)

    Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Rosa-Clot, M.; Taddei, S.

    1997-06-01

    Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

  11. In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

    Energy Technology Data Exchange (ETDEWEB)

    Dimakis, Emmanouil; Ramsteiner, Manfred; Huang, Chang-Ning; Trampert, Achim; Riechert, Henning; Geelhaar, Lutz [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3, 57072 Siegen (Germany)

    2013-09-30

    Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm{sup −1} were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.

  12. Commercial and Industrial Wiring.

    Science.gov (United States)

    Kaltwasser, Stan; Flowers, Gary

    This module is the third in a series of three wiring publications, includes additional technical knowledge and applications required for job entry in the commercial and industrial wiring trade. The module contains 15 instructional units that cover the following topics: blueprint reading and load calculations; tools and equipment; service;…

  13. Progress in low light-level InAs detectors- towards Geiger-mode detection

    Science.gov (United States)

    Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey

    2017-05-01

    InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.

  14. Charge Transport Along Phenylenevinylene Molecular Wires

    OpenAIRE

    2006-01-01

    Abstract A model to calculate the mobility of charges along molecular wires is presented. The model is based on the tight-binding approximation and combines a quantum mechanical description of the charge with a classical description of the structural degrees of freedom. It is demonstrated that the average mobility of charge carriers along molecular wires can be obtained by time-propagation of states which are initially localised. The model is used to calculate the mobility of charg...

  15. Using wire shaping techniques and holographic optics to optimize deposition characteristics in wire-based laser cladding.

    Science.gov (United States)

    Goffin, N J; Higginson, R L; Tyrer, J R

    2016-12-01

    In laser cladding, the potential benefits of wire feeding are considerable. Typical problems with the use of powder, such as gas entrapment, sub-100% material density and low deposition rate are all avoided with the use of wire. However, the use of a powder-based source material is the industry standard, with wire-based deposition generally regarded as an academic curiosity. This is because, although wire-based methods have been shown to be capable of superior quality results, the wire-based process is more difficult to control. In this work, the potential for wire shaping techniques, combined with existing holographic optical element knowledge, is investigated in order to further improve the processing characteristics. Experiments with pre-placed wire showed the ability of shaped wire to provide uniformity of wire melting compared with standard round wire, giving reduced power density requirements and superior control of clad track dilution. When feeding with flat wire, the resulting clad tracks showed a greater level of quality consistency and became less sensitive to alterations in processing conditions. In addition, a 22% increase in deposition rate was achieved. Stacking of multiple layers demonstrated the ability to create fully dense, three-dimensional structures, with directional metallurgical grain growth and uniform chemical structure.

  16. Is the ADHD brain wired differently? A review on structural and functional connectivity in attention deficit hyperactivity disorder.

    Science.gov (United States)

    Konrad, Kerstin; Eickhoff, Simon B

    2010-06-01

    In recent years, a change in perspective in etiological models of attention deficit hyperactivity disorder (ADHD) has occurred in concordance with emerging concepts in other neuropsychiatric disorders such as schizophrenia and autism. These models shift the focus of the assumed pathology from regional brain abnormalities to dysfunction in distributed network organization. In the current contribution, we report findings from functional connectivity studies during resting and task states, as well as from studies on structural connectivity using diffusion tensor imaging, in subjects with ADHD. Although major methodological limitations in analyzing connectivity measures derived from noninvasive in vivo neuroimaging still exist, there is convergent evidence for white matter pathology and disrupted anatomical connectivity in ADHD. In addition, dysfunctional connectivity during rest and during cognitive tasks has been demonstrated. However, the causality between disturbed white matter architecture and cortical dysfunction remains to be evaluated. Both genetic and environmental factors might contribute to disruptions in interactions between different brain regions. Stimulant medication not only modulates regionally specific activation strength but also normalizes dysfunctional connectivity, pointing to a predominant network dysfunction in ADHD. By combining a longitudinal approach with a systems perspective in ADHD in the future, it might be possible to identify at which stage during development disruptions in neural networks emerge and to delineate possible new endophenotypes of ADHD. (c) 2010 Wiley-Liss, Inc.

  17. Self-Assembled InAs Nanowires as Optical Reflectors

    Directory of Open Access Journals (Sweden)

    Francesco Floris

    2017-11-01

    Full Text Available Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

  18. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    International Nuclear Information System (INIS)

    Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

    2011-01-01

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

  19. Modeling and simulation of the fluid flow in wire electrochemical machining with rotating tool (wire ECM)

    Science.gov (United States)

    Klocke, F.; Herrig, T.; Zeis, M.; Klink, A.

    2017-10-01

    Combining the working principle of electrochemical machining (ECM) with a universal rotating tool, like a wire, could manage lots of challenges of the classical ECM sinking process. Such a wire-ECM process could be able to machine flexible and efficient 2.5-dimensional geometries like fir tree slots in turbine discs. Nowadays, established manufacturing technologies for slotting turbine discs are broaching and wire electrical discharge machining (wire EDM). Nevertheless, high requirements on surface integrity of turbine parts need cost intensive process development and - in case of wire-EDM - trim cuts to reduce the heat affected rim zone. Due to the process specific advantages, ECM is an attractive alternative manufacturing technology and is getting more and more relevant for sinking applications within the last few years. But ECM is also opposed with high costs for process development and complex electrolyte flow devices. In the past, few studies dealt with the development of a wire ECM process to meet these challenges. However, previous concepts of wire ECM were only suitable for micro machining applications. Due to insufficient flushing concepts the application of the process for machining macro geometries failed. Therefore, this paper presents the modeling and simulation of a new flushing approach for process assessment. The suitability of a rotating structured wire electrode in combination with an axial flushing for electrodes with high aspect ratios is investigated and discussed.

  20. Towards plant wires.

    Science.gov (United States)

    Adamatzky, Andrew

    2014-08-01

    In experimental laboratory studies we evaluate a possibility of making electrical wires from living plants. In scoping experiments we use lettuce seedlings as a prototype model of a plant wire. We approximate an electrical potential transfer function by applying direct current voltage to the lettuce seedlings and recording output voltage. We analyse oscillation frequencies of the output potential and assess noise immunity of the plant wires. Our findings will be used in future designs of self-growing wetware circuits and devices, and integration of plant-based electronic components into future and emergent bio-hybrid systems. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  1. The influence of atmosphere on performance of pure-phase WZ and ZB InAs nanowire transistors.

    Science.gov (United States)

    Ullah, Abu Rifat; Joyce, Hannah J; Tan, Hoe; Jagadish, Chennupati; Micolich, Adam P

    2017-09-21

    We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires. © 2017 IOP Publishing Ltd.

  2. The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

    Science.gov (United States)

    Ullah, A. R.; Joyce, H. J.; Tan, H. H.; Jagadish, C.; Micolich, A. P.

    2017-11-01

    We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

  3. Thermosonic wire bonding of IC devices using palladium wire

    International Nuclear Information System (INIS)

    Shze, J.H.; Poh, M.T.; Tan, R.M.

    1996-01-01

    The feasibility of replacing gold wire by palladium wire in thermosonic wire bonding of CMOS and bipolar devices are studied in terms of the manufacturability, physical, electrical and assembly performance. The results that palladium wire is a viable option for bonding the bipolar devices but not the CMOS devices

  4. Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

    Science.gov (United States)

    Jewett, Scott A; Ivanisevic, Albena

    2012-09-18

    In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can

  5. Fabrication of mesoscopic floating Si wires by introducing dislocations

    International Nuclear Information System (INIS)

    Motohashi, Mitsuya; Shimizu, Kazuya; Niwa, Masaaki; Suzuki, Toshiaki

    2014-01-01

    We fabricated a mesoscopic Si wire by introducing dislocations in a silicon wafer before HF anodization. The dislocations formed along the (111) crystal plane. The outline of the dislocation line was an inverted triangle. The resulting wire floated on a bridge girder and had a hybrid structure consisting of a porous layer and crystalline Si. The cross section of the wire had an inverted triangle shape. The wire formation mechanism is discussed in terms of carrier transport, crystal structure, and dislocation formation during anodization. (paper)

  6. Fabrication of mesoscopic floating Si wires by introducing dislocations

    Science.gov (United States)

    Motohashi, Mitsuya; Shimizu, Kazuya; Suzuki, Toshiaki; Niwa, Masaaki

    2014-12-01

    We fabricated a mesoscopic Si wire by introducing dislocations in a silicon wafer before HF anodization. The dislocations formed along the (111) crystal plane. The outline of the dislocation line was an inverted triangle. The resulting wire floated on a bridge girder and had a hybrid structure consisting of a porous layer and crystalline Si. The cross section of the wire had an inverted triangle shape. The wire formation mechanism is discussed in terms of carrier transport, crystal structure, and dislocation formation during anodization.

  7. Wire chambers: Trends and alternatives

    Energy Technology Data Exchange (ETDEWEB)

    Regler, Meinhard

    1992-05-15

    The subtitle of this year's Vienna Wire Chamber Conference - 'Recent Trends and Alternative Techniques' - signalled that it covered a wide range of science and technology. While an opening Vienna talk by wire chamber pioneer Georges Charpak many years ago began 'Les funerailles des chambres a fils (the burial of wire chambers)', the contrary feeling this year was that wire chambers are very much alive!.

  8. La costituzione dell’INA e il monopolio statale delle assicurazioni (1912-1922 = The constitution of INA and the state monopoly of insurance (1912-1922

    Directory of Open Access Journals (Sweden)

    Serena Potito

    2012-07-01

    Full Text Available Il saggio –basato principalmente su documenti attualmente conservati presso l’Archivio Storico dell’INA, a Roma– esamina le vicende legate alla nascita dell’Istituto, costituito in un regime transitorio di monopolio relativo nel settore delle assicurazioni sulla vita.A causa del suo significato economico e politico, questa speciale forma di monopolio statale diede luogo a molte reazioni nell’ambito finanziario e politico nazionale, pertanto l’INA iniziò i primi anni di attività in una situazione conflittuale ed incerta.Il saggio inoltre approfondisce le ripercussioni sul mercato assicurativo internazionale in seguito alla nascita dell’INA.Durante il decennio di monopolio parziale dell’Istituto nel settore delle assicurazioni sulla vita (1912-1922, le compagnie di assicurazione straniere ritennero compromessi i loro interessi finanziari nel mercato italiano, e lo osteggiarono fino al 1923, quando una nuova legge riformò il mercato assicurativo sulla vita, abolendo il regime di monopolio.The essay –mainly based on documents actually preserved in the Historical Archives of INA, in Rome– examines the events connected with the foundation of the Institute, established in a transient condition of partial monopoly system in life insurance sector. Because of its economic and political meaning, this special form of state monopoly gave rise to many reactions in the financial and political national context, and so INA started its first years of activity in a troubled and unstable situation. The essay also discusses about the repercussions on international insurance market in consequence of the foundation of INA.During the ten-year perior of partial monopoly of the Institute in life insurance sector (1912-1922, foreign insurance companies deemed their financial interest in Italian market jeopardized, and contrasted with it until 1923, when a new act reformed life insurance market, abrogating monopoly system. 

  9. Copper wire bonding

    CERN Document Server

    Chauhan, Preeti S; Zhong, ZhaoWei; Pecht, Michael G

    2014-01-01

    This critical volume provides an in-depth presentation of copper wire bonding technologies, processes and equipment, along with the economic benefits and risks.  Due to the increasing cost of materials used to make electronic components, the electronics industry has been rapidly moving from high cost gold to significantly lower cost copper as a wire bonding material.  However, copper wire bonding has several process and reliability concerns due to its material properties.  Copper Wire Bonding book lays out the challenges involved in replacing gold with copper as a wire bond material, and includes the bonding process changes—bond force, electric flame off, current and ultrasonic energy optimization, and bonding tools and equipment changes for first and second bond formation.  In addition, the bond–pad metallurgies and the use of bare and palladium-coated copper wires on aluminum are presented, and gold, nickel and palladium surface finishes are discussed.  The book also discusses best practices and re...

  10. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

    International Nuclear Information System (INIS)

    Usman, Muhammad; O’Reilly, Eoin P; Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana; Klimeck, Gerhard

    2012-01-01

    III–V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In–Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response. (paper)

  11. Growth and characterization of InAs quantum dots on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, L.; Ankudinov, A.; Bensing, F.; Wagner, J.; Wagner, V.; Geurts, J. [Wuerzburg Univ. (Germany). Lehrstuhl fuer Experimentelle Physik 3; Ade, G.; Hinze, P. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Waag, A. [Ulm Univ. (Germany). Abt. Halbleiterphysik

    2001-03-08

    We present a comprehensive investigation of molecular beam epitaxial (MBE) grown InAs quantum dots (QD) on silicon (001) and (111) by reflection high energy electron diffraction (RHEED) and Raman spectroscopy in UHV environment and ex-situ by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Two different ways were developed to prepare up to 10{sup 11} cm{sup -2} InAs QDs on Si(001). One is the conventional mode by exceeding a critical thickness of deposition at which 2D growth changes towards a 3D growth mode. A second way is a dewetting transition, induced by cooling an approximately 1 ML thin 2D InAs layer from growth temperature below a critical temperature at which RHEED indicates the formation of nanoislands. Samples grown in both manners show significant differences in morphology and shape though RHEED, TEM and Raman studies correspondingly indicate strain relaxation. On Si(111) InAs grows in the common temperature range for InAs growth ({proportional_to}400 C) in flat clusters separated by deep trenches. A previous passivation of the Si(111) surface with arsenic at {proportional_to}700 C on the other hand leads to the formation of large InAs nanocrystals. (orig.)

  12. Awareness of the Vysočina Regional Food Labels With Context of Their Media Presence

    Directory of Open Access Journals (Sweden)

    Martina Chalupová

    2016-01-01

    Full Text Available The article presents results of research study that focused on the recognition of the Vysočina regional labels among the consumers in the region in connection with media analysis about the topic. Research among consumers was conducted in each district of Vysočina Region (Jihlava, Žďár nad Sázavou, Třebíč, Havlíčkův Brod and Pelhřimov by interviewing a sample of 819 respondents, selected by quota sampling methods. The research was aimed at analysing the ability of respondents to recognise and differentiate two existing regional labels VYSOČINA Regional Product®, Regional Food Vysočina Region and also nonexistent brand From Our Region Vysočina, created by authors. Data have been processed with correspondence analysis and showed that respondents connect different characteristics with the labels. Media analysis of the Vysočina regional labels revealed that media may help building awareness about the labels but they do not shape respondents’ views on them. Examining the link between the frequency of different types of information in media and their potential impact on the labels’ pereception by consumers have shown distorted image. Stronger consensus between research and media analysis have been examined only on importance of products’ origin, which can be viewed as a logical inference from the name of the labels.

  13. The investigation of alloy formation during InAs nanowires growth on GaAs (111)B substrate

    Energy Technology Data Exchange (ETDEWEB)

    Saqib, Muhammad; Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3, Siegen 57072 (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institute (PGI-9), Forschungzentrum Juelich, Juelich 52425 (Germany)

    2013-07-01

    A possible way to obtain nanowires is the growth in molecular beam epitaxy (MBE) on the (111) oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of two different series (etched and unetched) of NWs samples. Vertically aligned InAs nanowires (NWs) doped with Si were self-assisted grown by molecular beam epitaxy on GaAs [111]B substrates covered with a thin SiO{sub x} layer. Using a combination of symmetric and asymmetric X-ray diffraction we study the influence of Si supply on the growth process and nanostructure formation. We find that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, we observe the formation of a Ga{sub 0.2}In{sub 0.8}As alloy if the growth is performed on samples covered by a defective (etched) oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Gallium concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

  14. The sub-wavelength imaging performance of disordered wire media

    International Nuclear Information System (INIS)

    Powell, David A.

    2008-01-01

    An analysis of the sub-wavelength imaging performance of disordered thin wire media is undertaken, in order to understand how its performance may be affected by manufacturing errors. The structure is found to be extremely robust to disorder which keeps the wires parallel. Variation in the orientation of the wires and their longitudinal position causes more significant degradation in the image quality, which is quantified numerically

  15. Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

    Science.gov (United States)

    Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

    2016-11-01

    We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

  16. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    International Nuclear Information System (INIS)

    Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

    2012-01-01

    Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  17. Gain-dependent linewidth enhancement factor in the quantum dot structures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyoung Chan; Han, Il Ki; Lee, Jung Il [Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kim, Tae Geun, E-mail: hikoel@kist.re.kr, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2010-04-02

    We measured the linewidth enhancement factor ({alpha} factor) of InAs quantum dot (QD) laser diodes (LDs) with two different QD structures. One is a normal QD LD with the same energy bandgap for each active QD layer, while the other is chirped with different energy bandgaps. The differential gain of the chirped InAs QD LDs is found to be about five times smaller than that of normal InAs QD LDs, whereas no overall wavelength shift with injection currents is observed in both QD LDs. The {alpha} factor is approximately five times higher in the chirped InAs QD LDs than in the normal InAs QD LDs. This relatively large {alpha} factor in the chirped InAs QD LDs is attributed to the asymmetrical, wide inhomogeneous gain profile.

  18. Body of Knowledge (BOK) for Copper Wire Bonds

    Science.gov (United States)

    Rutkowski, E.; Sampson, M. J.

    2015-01-01

    Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications

  19. Method for wrapping a wire round a nuclear fuel rod

    International Nuclear Information System (INIS)

    Nakayasu, Fumio.

    1974-01-01

    Object: To provide a method for winding a wire round a nuclear fuel rod with accurate pitches without imparting any local strain or torsion to the wire. Structure: A wire is fixed on one end of the fuel rod, and the other end of the wire is secured to a universal joint leaving a winding allowance to the fuel rod. The wire is linearly stretched by a predetermined tension through the universal joint so as to provide an angle of development theta corresponding to the desired winding pitch, and then, the fuel rod may be rotated so that the end of the wire on the side of the universal joint is moved towards the fuel rod so as to render the angle of development theta constant in proportion to said rotation of the fuel rod. (Kamimura, M.)

  20. Electron transport in quantum wires: possible current instability mechanism

    International Nuclear Information System (INIS)

    Sablikov, V.A.

    2001-01-01

    The electrons nonlinear and dynamic transition in quantum wires connecting the electron reservoirs, are studies with an account of the Coulomb interaction distribution of electron density between the reservoirs and the wire. It is established that there exist two processes, leading to electrical instability in such structure. One of them is expressed in form of multistability of the charge accumulated in the wire, and negative differential conductivity. The other one is connected with origination of negative dynamic conductivity in the narrow frequency range near the resonance frequency of the charge waves on the wire length [ru

  1. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

    CSIR Research Space (South Africa)

    Baisitse, TR

    2006-07-01

    Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

  2. Wire core reactor for NTP

    International Nuclear Information System (INIS)

    Harty, R.B.

    1991-01-01

    The development of the wire core system for Nuclear Thermal Propulsion (NTP) that took place from 1963 to 1965 is discussed. A wire core consists of a fuel wire with spacer wires. It's an annular flow core having a central control rod. There are actually four of these, with beryllium solid reflectors on both ends and all the way around. Much of the information on the concept is given in viewgraph form. Viewgraphs are presented on design details of the wire core, the engine design, engine weight vs. thrust, a technique used to fabricate the wire fuel element, and axial temperature distribution

  3. Wired to freedom

    DEFF Research Database (Denmark)

    Jepsen, Kim Sune Karrasch; Bertilsson, Margareta

    2017-01-01

    dimension of life science through a notion of public politics adopted from the political theory of John Dewey. We show how cochlear implantation engages different social imaginaries on the collective and individual levels and we suggest that users share an imaginary of being “wired to freedom” that involves...... new access to social life, continuous communicative challenges, common practices, and experiences. In looking at their lives as “wired to freedom,” we hope to promote a wider spectrum of civic participation in the benefit of future life science developments within and beyond the field of Cochlear...

  4. Electric wiring domestic

    CERN Document Server

    Coker, A J

    1992-01-01

    Electric Wiring: Domestic, Tenth Edition, is a clear and reliable guide to the practical aspects of domestic electric wiring. Intended for electrical contractors, installation engineers, wiremen and students, its aim is to provide essential up to date information on modern methods and materials in a simple, clear, and concise manner. The main changes in this edition are those necessary to bring the work into line with the 16th Edition of the Regulations for Electrical Installations issued by the Institution of Electrical Engineers. The book begins by introducing the basic features of domestic

  5. Modern wiring practice

    CERN Document Server

    Steward, W E

    2012-01-01

    Continuously in print since 1952, Modern Wiring Practice has now been fully revised to provide an up-to-date source of reference to building services design and installation in the 21st century. This compact and practical guide addresses wiring systems design and electrical installation together in one volume, creating a comprehensive overview of the whole process for contractors and architects, as well as electricians and other installation engineers. Best practice is incorporated throughout, combining theory and practice with clear and accessible explanation, all

  6. PRODUCTION OF ELECTROTECHNICAL WIRE OF SCRAP AND COPPER WASTES

    Directory of Open Access Journals (Sweden)

    I. P. Volchok

    2006-01-01

    Full Text Available Chemical composition, structure and properties of copper upon base steps of wire production technology (melting of anode copper with using of scrap and waste, electrolitical refining, producing of rod by continuous casting, manufacture of electrotechnical wire and fibres is described.

  7. Structural characterisation and mechanical FE analysis of conventional and M-Wire Ni-Ti alloys used in endodontic rotary instruments.

    Science.gov (United States)

    Montalvão, Diogo; Alçada, Francisca Sena; Braz Fernandes, Francisco Manuel; de Vilaverde-Correia, Sancho

    2014-01-01

    The purpose of this study is to understand how the M-Wire alloy conditions the mechanical flexibility of endodontic rotary files at body temperature.Two different rotary instruments, a Profile GT 20/.06 and a Profile GT Series X 20/.06, were selected due to their geometrical similarity and their different constituent alloy. GT series X files are made from M-Wire, a Ni-Ti alloy allegedly having higher flexibility at body temperature. Both files were analysed by X-Ray Diffraction and Differential Scanning Calorimetry to investigate phase transformations and the effects of working temperature on these different alloys. Mechanical behaviour was assessed by means of static bending and torsional Finite Element simulations, taking into account the nonlinear superelastic behaviour of Ni-Ti materials. It was found that GT files present austenitic phase at body temperature, whereas GT series X present R-phase at temperatures under 40 °C with a potential for larger flexibility. For the same load conditions, simulations showed that the slight geometrical differences between the two files do not introduce great disagreement in the instruments' mechanical response. It was confirmed that M-Wire increases the instrument's flexibility, mainly due to the presence of R-phase at body temperature.

  8. Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

    Science.gov (United States)

    Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

    2008-07-01

    This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

  9. An Integrated Nonlinear Analysis library - (INA) for solar system plasma turbulence

    Science.gov (United States)

    Munteanu, Costel; Kovacs, Peter; Echim, Marius; Koppan, Andras

    2014-05-01

    We present an integrated software library dedicated to the analysis of time series recorded in space and adapted to investigate turbulence, intermittency and multifractals. The library is written in MATLAB and provides a graphical user interface (GUI) customized for the analysis of space physics data available online like: Coordinated Data Analysis Web (CDAWeb), Automated Multi Dataset Analysis system (AMDA), Planetary Science Archive (PSA), World Data Center Kyoto (WDC), Ulysses Final Archive (UFA) and Cluster Active Archive (CAA). Three main modules are already implemented in INA : the Power Spectral Density (PSD) Analysis, the Wavelet and Intemittency Analysis and the Probability Density Functions (PDF) analysis.The layered structure of the software allows the user to easily switch between different modules/methods while retaining the same time interval for the analysis. The wavelet analysis module includes algorithms to compute and analyse the PSD, the Scalogram, the Local Intermittency Measure (LIM) or the Flatness parameter. The PDF analysis module includes algorithms for computing the PDFs for a range of scales and parameters fully customizable by the user; it also computes the Flatness parameter and enables fast comparison with standard PDF profiles like, for instance, the Gaussian PDF. The library has been already tested on Cluster and Venus Express data and we will show relevant examples. Research supported by the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement no 313038/STORM, and a grant of the Romanian Ministry of National Education, CNCS UEFISCDI, project number PN-II-ID PCE-2012-4-0418.

  10. Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

    2015-02-07

    Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

  11. Wired vs. Wireless.

    Science.gov (United States)

    Fielding, Randall

    2000-01-01

    Presents a debate on which technology will be in tomorrow's classrooms and the pros and cons of wiring classrooms and using a wireless network. Concluding comments address the likelihood, and desirability, of placing computers throughout the entire educational process and what types of computers and capabilities are needed. (GR)

  12. A World without Wires

    Science.gov (United States)

    Panettieri, Joseph C.

    2006-01-01

    The wireless bandwagon is rolling across Mississippi, picking up a fresh load of converts and turning calamity into opportunity. Traditional wired school networks, many of which unraveled during Hurricane Katrina, are giving way to advanced wireless mesh networks that frequently include voice-over-IP (VoIP) capabilities. Vendor funding is helping…

  13. 3D Wire 2015

    DEFF Research Database (Denmark)

    Jordi, Moréton; F, Escribano; J. L., Farias

    This document is a general report on the implementation of gamification in 3D Wire 2015 event. As the second gamification experience in this event, we have delved deeply in the previous objectives (attracting public areas less frequented exhibition in previous years and enhance networking) and have...

  14. Wire chamber conference

    International Nuclear Information System (INIS)

    Bartl, W.; Neuhofer, G.; Regler, M.

    1986-02-01

    This booklet contains program and the abstracts of the papers presented at the conference, most of them dealing with performance testing of various types of wire chambers. The publication of proceedings is planned as a special issue of 'Nuclear instruments and methods' later on. All abstracts are in English. An author index for the book of abstracts is given. (A.N.)

  15. Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields

    International Nuclear Information System (INIS)

    Koyama, M.; Fujiwara, K.; Amano, N.; Maemoto, T.; Sasa, S.; Inoue, M.

    2009-01-01

    We report on the electron transport properties based on ballistic electrons under magnetic fields in four-terminal ballistic junctions fabricated on an InAs/AlGaSb heterostructure. The four-terminal junction structure is composed of two longitudinal stems with two narrow wires slanted with 30 degree from the perpendicular axis. The electron focusing peak was obtained with the bend resistance measurement. Then it was investigated the nonlinear electron transport property of potential difference between longitudinal stems due to ballistic electrons with applying direct current from narrow wires. Observed nonlinearity showed clear rectification effects which have negative polarity regardless of input voltage polarity. Although this nonlinearity was qualitatively changed due to the Lorentz force under magnetic fields, the degradation of ballistic effects on nonlinear properties were observed when the current increased to higher strength. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Wire EDM for Refractory Materials

    Science.gov (United States)

    Zellars, G. R.; Harris, F. E.; Lowell, C. E.; Pollman, W. M.; Rys, V. J.; Wills, R. J.

    1982-01-01

    In an attempt to reduce fabrication time and costs, Wire Electrical Discharge Machine (Wire EDM) method was investigated as tool for fabricating matched blade roots and disk slots. Eight high-strength nickel-base superalloys were used. Computer-controlled Wire EDM technique provided high quality surfaces with excellent dimensional tolerances. Wire EDM method offers potential for substantial reductions in fabrication costs for "hard to machine" alloys and electrically conductive materials in specific high-precision applications.

  17. Practical wiring in SI units

    CERN Document Server

    Miller, Henry A

    2013-01-01

    Practical Wiring, Volume 1 is a 13-chapter book that first describes some of the common hand tools used in connection with sheathed wiring. Subsequent chapters discuss the safety in wiring, cables, conductor terminations, insulating sheathed wiring, conductor sizes, and consumer's control equipments. Other chapters center on socket outlets, plugs, lighting subcircuits, lighting accessories, bells, and primary and secondary cells. This book will be very valuable to students involved in this field of interest.

  18. Wire chambers: Trends and alternatives

    International Nuclear Information System (INIS)

    Regler, Meinhard

    1992-01-01

    The subtitle of this year's Vienna Wire Chamber Conference - 'Recent Trends and Alternative Techniques' - signalled that it covered a wide range of science and technology. While an opening Vienna talk by wire chamber pioneer Georges Charpak many years ago began 'Les funerailles des chambres a fils (the burial of wire chambers)', the contrary feeling this year was that wire chambers are very much alive!

  19. Wire anode for isotope separation apparatus

    International Nuclear Information System (INIS)

    Janes, G.S.; Dotson, J.P.

    1976-01-01

    In uranium enrichment, an electrode structure of thin, tensioned, parallel wires is claimed for use in applying an electric field to a region of a flowing uranium plasma including selectively ionized particles in order to accelerate the ionized particles for separate collection without interfering with the motion of neutral particles. 24 claims, 3 drawing figures

  20. Cutting bubbles with a single wire

    NARCIS (Netherlands)

    Baltussen, M.W.; Segers, Q.I.E.; Kuipers, J.A.M.; Deen, N.G.

    2017-01-01

    Many gas-liquid-solid contactors, such as trickle bed and bubble slurry columns, suffer from heat and mass transfer limitations. To overcome these limitations, new micro-structured bubble column reactor is proposed. In this reactor, a catalyst coated wire mesh is introduced in a bubble column to cut

  1. Mesoscopic NbSe3 wires

    International Nuclear Information System (INIS)

    Zant, H.S.J. van der; Kalwij, A.; Mantel, O.C.; Markovic, N.

    1999-01-01

    We have fabricated wire structures with (sub)micron sizes in the charge-density wave conductor NbSe 3 . Electrical transport measurements include complete mode-locking on Shapiro steps and show that the patterning has not affected the CDW material. Our mesoscopic wires show strong fluctuation and hysteresis effects in the low-temperature current-voltage characteristics, as well as a strong reduction of the phase-slip voltage. This reduction can not be explained with existing models. We suggest that single phase-slip events are responsible for a substantial reduction of the CDW strain in micron-sized systems. (orig.)

  2. Monitoring and evaluation of wire mesh forming life

    Science.gov (United States)

    Enemuoh, Emmanuel U.; Zhao, Ping; Kadlec, Alec

    2018-03-01

    Forming tables are used with stainless steel wire mesh conveyor belts to produce variety of products. The forming tables will typically run continuously for several days, with some hours of scheduled downtime for maintenance, cleaning and part replacement after several weeks of operation. The wire mesh conveyor belts show large variation in their remaining life due to associated variations in their nominal thicknesses. Currently the industry is dependent on seasoned operators to determine the replacement time for the wire mesh formers. The drawback of this approach is inconsistency in judgements made by different operators and lack of data knowledge that can be used to develop decision making system that will be more consistent with wire mesh life prediction and replacement time. In this study, diagnostic measurements about the health of wire mesh former is investigated and developed. The wire mesh quality characteristics considered are thermal measurement, tension property, gage thickness, and wire mesh wear. The results show that real time thermal sensor and wear measurements would provide suitable data for the estimation of wire mesh failure, therefore, can be used as a diagnostic parameter for developing structural health monitoring (SHM) system for stainless steel wire mesh formers.

  3. Channeling study of laser-induced defect generation in InP and InAs

    International Nuclear Information System (INIS)

    Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

    1992-01-01

    Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

  4. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

    International Nuclear Information System (INIS)

    Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

    2014-01-01

    Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

  5. Growth-interruption-induced low-density InAs quantum dots on GaAs

    International Nuclear Information System (INIS)

    Li, L. H.; Alloing, B.; Chauvin, N.; Fiore, A.; Patriarche, G.

    2008-01-01

    We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/μm 2 ) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 μm emission at 4 K

  6. Temperature Diffusion Distribution of Electric Wire Deteriorated by Overcurrent

    Science.gov (United States)

    Choi, Chung-Seog; Kim, Hyang-Kon; Kim, Dong-Woo; Lee, Ki-Yeon

    This study presents thermal diffusion distribution of the electric wires when overcurrent is supplied to copper wires. And then, this study intends to provide a basis of knowledge for analyzing the causes of electric accidents through hybrid technology. In the thermal image distribution analysis of the electric wire to which fusing current was supplied, it was found that less heat was accumulated in the thin wires because of easier heat dispersion, while more heat was accumulated in the thicker wires. The 3-dimensional thermal image analysis showed that heat distribution was concentrated at the center of the wire and the inclination of heat distribution was steep in the thicker wires. When 81A was supplied to 1.6mm copper wire for 500 seconds, the surface temperature of wire was maximum 46.68°C and minimum 30.87°C. It revealed the initial characteristics of insulation deterioration that generates white smoke without external deformation. In the analysis with stereoscopic microscope, the surface turned dark brown and rough with the increase of fusing current. Also, it was known that exfoliation occurred when wire melted down with 2 times the fusing current. With the increase of current, we found the number of primary arms of the dendrite structure to be increased and those of the secondary and tertiary arms to be decreased. Also, when the overcurrent reached twice the fusing current, it was found that columnar composition, observed in the cross sectional structure of molten wire, appeared and formed regular directivity. As described above, we could present the burning pattern and change in characteristics of insulation and conductor quantitatively. And we could not only minimize the analysis error by combining the information but also present the scientific basis in the analysis of causes of electric accidents, mediation of disputes on product liability concerning the electric products.

  7. Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

    Science.gov (United States)

    Chen, Miaoxiang; Kobashi, Kazufumi

    2012-09-01

    Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting biocompatible diazonium salt compound (amine donor) atop InAs QDs structure. Since its interface between the QDs structure and molecular monolayer retains an uncontaminated and non-oxidized condition, the nanosystem is an ideal platform to study the intrinsic properties of charge-carrier transport inside the system. Because of the complexity of the energy-levels in the QDs structure due to the existing surface QDs and DWELLs, selective excitation wavelengths (400, 633, and 885 nm, respectively) with different photo-energies are used to exactly analyze the complete charging mechanism in these QDs. A clear view of charge-carrier transfer inside the nanosystem is revealed by employing photoluminescence technique under selective-wavelength excitations. The present work provides new quantitative evidences for exploiting inorganic QDs applications in complex biological systems.

  8. Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

    Energy Technology Data Exchange (ETDEWEB)

    Chen Miaoxiang [Department of Micro- and Nano technology, Technical University of Denmark, Orsteds Plads, 2800 Kgs. Lyngby (Denmark); Kobashi, Kazufumi [Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2012-09-15

    Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting biocompatible diazonium salt compound (amine donor) atop InAs QDs structure. Since its interface between the QDs structure and molecular monolayer retains an uncontaminated and non-oxidized condition, the nanosystem is an ideal platform to study the intrinsic properties of charge-carrier transport inside the system. Because of the complexity of the energy-levels in the QDs structure due to the existing surface QDs and DWELLs, selective excitation wavelengths (400, 633, and 885 nm, respectively) with different photo-energies are used to exactly analyze the complete charging mechanism in these QDs. A clear view of charge-carrier transfer inside the nanosystem is revealed by employing photoluminescence technique under selective-wavelength excitations. The present work provides new quantitative evidences for exploiting inorganic QDs applications in complex biological systems.

  9. Interaction and Dephasing of Excitons in ZnSe Quantum Wires

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Langbein, Wolfgang; Hvam, Jørn Märcher

    1999-01-01

    We study the coherent formation of biexcitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm by transient degenerate four-wave mixing. We observe an increase of the biexciton binding energy with decreasing wire width reaching 30% energy enhancement in the smallest wire structure...

  10. Development of cutting techniques of steel pipe by wire sawing

    International Nuclear Information System (INIS)

    Kamiyama, Yoshinori; Inai, Shinsuke

    2004-01-01

    A cutting method has a high cutting efficiency and enable cutting in safe. A wire saw cutting method is used for dismantling of massive concrete structures such as nuclear power plants with an effective and safe mean. In the case of dismantling of structures with multiple pipes installed at these facilities, an effective method is also demanded. If a wire saw method to remotely cut target objects in a large block in bulk is applicable, it will be expected an effective dismantling work under severe conditions with radioactivity. Although the wire saw method has adaptability for any shapes of cutting target objects and is widely adopted in dismantling of concrete constructs, it has few actual achievements in dismantling of steel structures such as steel pipe bundle. This study aims to verify its cutting characteristics and adaptability as a cutting method by conducting a cutting basic test to develop a diamond wire saw method to efficiently cut constructs with multiple pipes in a bundle. The test proved that a wire saw cutting method apply to dismantle structures with steel pipe bundle. A wire saw for metal cutting is adaptable in dismantling of bundle of thick carbon steel and stainless steel pipes. And also a wire saw for concrete cutting is adaptable in dismantling of pipe bundle structure with a mortar. (author)

  11. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  12. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  13. Spin effects in InAs self-assembled quantum dots

    Directory of Open Access Journals (Sweden)

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  14. Jezdecké stezky v kraji Vysočina

    OpenAIRE

    Bendeová, Tereza

    2014-01-01

    This bachelor thesis discusses the topic of riding trails in the Vysočina region. At the beginning I discuss the role of equestrian tourism in the Czech Republic. There are briefly described origins and conditions of riding trails in the regions and also the list of the public support and grants for development of equestrian tourism. The next part focuses on chosen region and characterizes its natural and cultural heritage. There are also described several trails through the Vysočina region. ...

  15. Hall and thermoelectric evaluation of p-type InAs

    International Nuclear Information System (INIS)

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  16. Vienna Wire Chamber Conference

    International Nuclear Information System (INIS)

    Anon.

    1983-01-01

    After those of 1978 and 1980, a third Wire Chamber Conference was held from 15-18 February in the Technical University of Vienna. Eight invited speakers covered the field from sophisticated applications in biology and medicine, via software, to the state of the art of gaseous detectors. In some forty other talks the speakers tackled in more detail the topics of gaseous detectors, calorimetry and associated electronics and software

  17. The Micro Wire Detector

    International Nuclear Information System (INIS)

    Adeva, B.; Gomez, F.; Pazos, A.; Pfau, R.; Plo, M.; Rodriguez, J.M.; Vazquez, P.; Labbe, J.C.

    1999-01-01

    We present the performance of a new proportional gas detector. Its geometry consists of a cathode plane with 70x70 μm 2 apertures, crossed by 25 μm anode strips to which it is attached by 50 μm kapton spacers. In the region where the avalanche takes place, the anode strips are suspended in the gas mixture as in a standard wire chamber. This detector exhibits high rate capability and large gains, introducing very little material. (author)

  18. Superconducting magnet wire

    Science.gov (United States)

    Schuller, Ivan K.; Ketterson, John B.; Banerjee, Indrajit

    1986-01-01

    A superconducting tape or wire with an improved critical field is formed of alternating layers of a niobium-containing superconductor such as Nb, NbTi, Nb.sub.3 Sn or Nb.sub.3 Ge with a thickness in the range of about 0.5-1.5 times its coherence length, supported and separated by layers of copper with each copper layer having a thickness in the range of about 170-600 .ANG..

  19. Twisting wire scanner

    Energy Technology Data Exchange (ETDEWEB)

    Gharibyan, V.; Delfs, A.; Koruptchenkov, I.; Noelle, D.; Tiessen, H.; Werner, M.; Wittenburg, K.

    2012-11-15

    A new type of 'two-in-one' wire scanner is proposed. Recent advances in linear motors' technology make it possible to combine translational and rotational movements. This will allow to scan the beam in two perpendicular directions using a single driving motor and a special fork attached to it. Vertical or horizontal mounting will help to escape problems associated with the 45 deg scanners. Test results of the translational part with linear motors is presented.

  20. Twisting wire scanner

    International Nuclear Information System (INIS)

    Gharibyan, V.; Delfs, A.; Koruptchenkov, I.; Noelle, D.; Tiessen, H.; Werner, M.; Wittenburg, K.

    2012-11-01

    A new type of 'two-in-one' wire scanner is proposed. Recent advances in linear motors' technology make it possible to combine translational and rotational movements. This will allow to scan the beam in two perpendicular directions using a single driving motor and a special fork attached to it. Vertical or horizontal mounting will help to escape problems associated with the 45 deg scanners. Test results of the translational part with linear motors is presented.

  1. Wire chamber gases

    International Nuclear Information System (INIS)

    Va'vra, J.

    1992-04-01

    In this paper, we describe new developments in gas mixtures which have occurred during the last 3--4 years. In particular, we discuss new results on the measurement and modeling of electron drift parameters, the modeling of drift chamber resolution, measurements of primary ionization and the choice of gas for applications such as tracking, single electron detection, X-ray detection and visual imaging. In addition, new results are presented on photon feedback, breakdown and wire aging

  2. InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

    International Nuclear Information System (INIS)

    Cao, Meng; Wu, Hui-Zhen; Lao, Yan-Feng; Cao, Chun-Fang; Liu, Cheng

    2009-01-01

    The intermixing effect on InAs 0.45 P 0.55 /InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.

  3. Wire in the Cable-Driven System of Surgical Robot

    Science.gov (United States)

    Wang, X. F.; Lv, N.; Mu, H. Z.; Xue, L. J.

    2017-07-01

    During the evolution of the surgical robot, cable plays an important role. It translates motion and force precisely from surgeon’s hand to the tool’s tips. In the paper, the vertical wires, the composition of cable, are mathematically modeled from a geometric point of view. The cable structure and tension are analyzed according to the characteristics of wire screw twist. The structural equations of the wires in different positions are derived for both non-bent cable and bent cable, respectively. The bending moment formula of bent cable is also obtained. This will help researchers find suitable cable and design more matched pulley.

  4. Machine for winding under tension a prestressing wire

    International Nuclear Information System (INIS)

    Perez, M.A.; Thillet, Georges.

    1975-01-01

    This invention concerns a machine for winding under tension a prestressing wire or cable. It is used in the wrapping of cylindrical structures, particularly concrete vessels, for the purpose of achieving radial prestressing in them [fr

  5. Self-organization of mesoscopic silver wires by electrochemical deposition

    Directory of Open Access Journals (Sweden)

    Sheng Zhong

    2014-08-01

    Full Text Available Long, straight mesoscale silver wires have been fabricated from AgNO3 electrolyte via electrodeposition without the help of templates, additives, and surfactants. Although the wire growth speed is very fast due to growth under non-equilibrium conditions, the wire morphology is regular and uniform in diameter. Structural studies reveal that the wires are single-crystalline, with the [112] direction as the growth direction. A possible growth mechanism is suggested. Auger depth profile measurements show that the wires are stable against oxidation under ambient conditions. This unique system provides a convenient way for the study of self-organization in electrochemical environments as well as for the fabrication of highly-ordered, single-crystalline metal nanowires.

  6. Dual wire welding torch and method

    Science.gov (United States)

    Diez, Fernando Martinez; Stump, Kevin S.; Ludewig, Howard W.; Kilty, Alan L.; Robinson, Matthew M.; Egland, Keith M.

    2009-04-28

    A welding torch includes a nozzle with a first welding wire guide configured to orient a first welding wire in a first welding wire orientation, and a second welding wire guide configured to orient a second welding wire in a second welding wire orientation that is non-coplanar and divergent with respect to the first welding wire orientation. A method of welding includes moving a welding torch with respect to a workpiece joint to be welded. During moving the welding torch, a first welding wire is fed through a first welding wire guide defining a first welding wire orientation and a second welding wire is fed through a second welding wire guide defining a second welding wire orientation that is divergent and non-coplanar with respect to the first welding wire orientation.

  7. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Dhifallah, I., E-mail: ines.dhifallah@gmail.co [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Daoudi, M.; Bardaoui, A. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Eljani, B. [Unite de recherche sur les Hetero-Epitaxie et Applications, Faculte des Sciences de Monastir (Tunisia); Ouerghi, A. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 46a0, Marcoussis (France); Chtourou, R. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia)

    2011-05-15

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E{sub e-hh}) and electron-light-hole (E{sub e-lh}) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-{delta}-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-{delta}-doped samples, we have determined the internal electric field introduced by ionized Si-{delta}-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: {yields} Studying HEMTs structures with different silicon doping content. {yields} An increase of the electric field in the InAs layer with increasing Si content. {yields} The interband energy transitions in the HEMTs structures have been obtained from PR. {yields} Experimental and theoretical values of transitions energies were in good agreement.

  8. Recent development of drastically innovative BSCCO wire (DI-BISCCO)

    International Nuclear Information System (INIS)

    Kikuchi, M.; Kato, T.; Ohkura, K.; Ayai, N.; Fujikami, J.; Fujino, K.; Kobayashi, S.; Ueno, E.; Yamazaki, K.; Yamade, S.; Hayashi, K.; Sato, K.; Nagai, T.; Matsui, Y.

    2006-01-01

    Up to this day, Ag-sheathed Bi2223 superconducting wires have been widely investigated and the long wires about 1000 m have been produced by using powder-in-tube (PIT) method on a commercial basis in the various facilities or companies. Although the wires are used for some applications such as HTS cables, magnets, motor and so on, the Bi2223 wires not only require much more improvements of the superconducting properties such as critical current, mechanical properties, but also longer and more uniform wires. Recently, the performances of Bi2223 wires have been drastically improved by using Controlled Over Pressure (CT-OP) sintering process. CT-OP process increased critical current (I c ) by more than 60% at 77 K and self field and improved the mechanical strength by more than 70%. The maximum I c was increased up to 166 A. These drastic improvements were caused by the higher density of Bi2223 filament up to almost 100% and better connectivity of the Bi2223 grains. The dense structure of the Bi2223 filaments prevents the ballooning phenomenon which is caused by the gasification of the trapped liquid nitrogen during temperature rise. Additionally, higher uniformity and higher production yield of long length wire were also achieved by exterminating defects during sintering. These high performance levels in CT-OP wires have contributed commercial level applications. We call as Drastically Innovative BSCCO (DI-BSCCO)

  9. Octave-spanning supercontinuum generation at telecommunications wavelengths in a precisely dispersion- and length-controlled silicon-wire waveguide with a double taper structure

    Science.gov (United States)

    Ishizawa, Atsushi; Goto, Takahiro; Kou, Rai; Tsuchizawa, Tai; Matsuda, Nobuyuki; Hitachi, Kenichi; Nishikawa, Tadashi; Yamada, Koji; Sogawa, Tetsuomi; Gotoh, Hideki

    2017-07-01

    We demonstrate on-chip octave-spanning supercontinuum (SC) generation with a Si-wire waveguide (SWG). We precisely controlled the SWG width so that the group velocity becomes flat over a wide wavelength range. By adjusting the SWG length, we could reduce the optical losses due to two-photon absorption and pulse propagation. In addition, for efficient coupling between the laser pulse and waveguide, we fabricated a two-step inverse taper at both ends of the SWG. Using a 600-nm-wide SWG, we were able to generate a broadband SC spectrum at wavelengths from 1060 to 2200 nm at a -40 dB level with only 50-pJ laser energy from an Er-doped fiber laser oscillator. We found that we can generate an on-chip broadband SC spectrum with an SWG with a length even as small as 1.7 mm.

  10. Right wire in orthodontics: a review

    OpenAIRE

    Ali, Hashim

    2015-01-01

    Quality of orthodontic wire such as stiffness, hardness, resiliency, elasticity and working range are important determinants of the effectivenes of tooth movement. Commonly used types of orthodontic arch wire:1) stainless steel(ss) wire, 2) conventional nickel- titanium (NiTi)alloy wire,3) improved super elastic NiTi- alloy wire( also called low hysteresis(LH)wire), and titanium molybdenum alloy(TMA) wire.

  11. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

    Science.gov (United States)

    Savelyev, Igor; Blumin, Marina; Wang, Shiliang; Ruda, Harry E.

    2017-01-01

    Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications. PMID:28714903

  12. Charge pumping in InAs nanowires by surface acoustic waves

    NARCIS (Netherlands)

    Roddaro, Stefano; Strambini, Elia; Romeo, Lorenzo; Piazza, Vincenzo; Nilsson, Kristian; Samuelson, Lars; Beltram, Fabio

    2010-01-01

    We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is

  13. Electron Spin Polarization and Detection in InAs Quantum Dots Through p-Shell Trions

    Science.gov (United States)

    2010-01-08

    optical control of spin states in quantum dots. II. EXPERIMENT The QD sample consists of 20 layers of InAs QDs, grown by molecular -beam epitaxy through...anisotropic 2D harmonic poten- tials. The electrons and holes are described by Fock- Darwin states harmonic oscillators with lateral sizes ax and ay in this

  14. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  15. Positioning of self-assembled InAs quantum dots by focused ion beam implantation

    International Nuclear Information System (INIS)

    Mehta, M.

    2007-01-01

    Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

  16. Diameter dependence of the thermal conductivity of InAs nanowires

    NARCIS (Netherlands)

    Swinkels, M.Y.; van Delft, M.R.; Oliveira, D.S.; Cavalli, A.; Zardo, I.; van der Heijden, R.W.; Bakkers, E.P.A.M.

    2015-01-01

    The diameter dependence of the thermal conductivity of InAs nanowires in the range of 40–1500 nm has been measured. We demonstrate a reduction in thermal conductivity of 80% for 40 nm nanowires, opening the way for further design strategies for nanoscaled thermoelectric materials. Furthermore, we

  17. Study of electron transport in n-type InAs substrate by Monte Carlo ...

    African Journals Online (AJOL)

    It is therefore an iterative process made up from a whole coasting flights stopped by acoustics interactions, polar and non polar optics, piezoelectric, inter-valley, impurity, ionization and surface. By applying this method to the III-V material, case of InAs, we have described the behavior of the carriers from dynamic and ...

  18. High tunability and superluminescence in InAs mid-infrared light emitting diodes

    International Nuclear Information System (INIS)

    Sherstnev, V.V.; Krier, A.; Hill, G.

    2002-01-01

    We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

  19. Pathogenic and Ice-Nucleation Active (INA) Bacteria causing Dieback of Willows in Short Rotation Forestry

    Energy Technology Data Exchange (ETDEWEB)

    Nejad, Pajand

    2005-03-01

    To find out whether bacteria isolated from diseased plant parts can be the main causal agent for the dieback appearing in Salix energy forestry plantations in Sweden during the last few years, and if the joint effects of bacteria and frost injury are synergistic, extensive sampling of shoots from diseased Salix plants was performed. We performed several laboratory and greenhouse investigations and used evaluation techniques on the functions of the Ice-Nucleation Active (INA) bacteria. We carried out a comparison between spring and autumn bacterial communities isolated from within (endophytically) and surface (epiphytically) plant tissues of Salix viminalis. Seasonal variation of bacteria in willow clones with different levels of frost sensitivity and symptoms of bacterial damage was also investigated. We further focussed on possible effect of fertilisation and nutrient availability on the bacterial community in relation to plant dieback in Estonian willow plantations. The identification and detection of INA bacteria which cause damage in combination with frost to willow (Salix spp) plants in late fall, winter and spring was performed using BIOLOG MicroPlate, biochemical tests, selective INA primers and 16S rDNA analysis. To distinguish the character for differentiation between these bacteria morphologically and with respect to growing ability different culture media were used. We studied the temperature, at which ice nucleation occurred for individual bacteria, estimated the population of INA bacteria, effect of growth limiting factors, and evaluated the effect of chemical and physical agents for disruption and possible inhibition of INA among individual bacterial strains. The concentration of carbon, nitrogen and phosphorus on INA is discussed. We demonstrate that among the bacterial isolates recovered from the willow plantations, there were many that were capable of ice nucleation at temperatures between -2 and -10 deg C, many that were capable of inducing a

  20. Review of wire chamber aging

    International Nuclear Information System (INIS)

    Va'Vra, J.

    1986-02-01

    This paper makes an overview of the wire chamber aging problems as a function of various chamber design parameters. It emphasizes the chemistry point of view and many examples are drawn from the plasma chemistry field as a guidance for a possible effort in the wire chamber field. The paper emphasizes the necessity of variable tuning, the importance of purity of the wire chamber environment, as well as it provides a practical list of presently known recommendations. In addition, several models of the wire chamber aging are qualitatively discussed. The paper is based on a summary talk given at the Wire Chamber Aging Workshop held at LBL, Berkeley on January 16-17, 1986. Presented also at Wire Chamber Conference, Vienna, February 25-28, 1986. 74 refs., 18 figs., 11 tabs

  1. Low temperature annealing of cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Bech, Jakob Ilsted; Hansen, Niels

    2015-01-01

    Cold-drawn pearlitic steel wires are nanostructured and the flow stress at room temperature can reach values above 6 GPa. A typical characteristic of the nanostructured metals, is the low ductility and thermal stability. In order to optimize both the processing and application of the wires......, the thermal behaviour is of interest. This has been studied by annealing the wires for 1h at temperatures from ambient temperature to 300 ℃ (573 K). It is expected that a raising temperature may lead to structural changes and a reduction in strength. The change in strength is however not expected to be large....... For this reason we have applied a very precise technique to measure the tensile properties of the wires from a strain of 10-4 to the maximum strain of about 1-2%. The structural changes have also been followed to estimate and relate strength changes to changes in structural parameters and morphology....

  2. The Micro Wire Detector

    Energy Technology Data Exchange (ETDEWEB)

    Adeva, B.; Gomez, F.; Pazos, A.; Pfau, R.; Plo, M. E-mail: maximo.plo@cern.ch; Rodriguez, J.M.; Vazquez, P.; Labbe, J.C

    1999-10-11

    We present the performance of a new proportional gas detector. Its geometry consists of a cathode plane with 70x70 {mu}m{sup 2} apertures, crossed by 25 {mu}m anode strips to which it is attached by 50 {mu}m kapton spacers. In the region where the avalanche takes place, the anode strips are suspended in the gas mixture as in a standard wire chamber. This detector exhibits high rate capability and large gains, introducing very little material. (author)

  3. Wiring regulations in brief

    CERN Document Server

    Tricker, Ray

    2012-01-01

    Tired of trawling through the Wiring Regs?Perplexed by Part P?Confused by cables, conductors and circuits?Then look no further! This handy guide provides an on-the-job reference source for Electricians, Designers, Service Engineers, Inspectors, Builders, Students, DIY enthusiastsTopic-based chapters link areas of working practice - such as cables, installations, testing and inspection, special locations - with the specifics of the Regulations themselves. This allows quick and easy identification of the official requirements relating to the situati

  4. Diagnostics for exploding wires (abstract)

    International Nuclear Information System (INIS)

    Moosman, B.; Bystritskii, V.; Wessel, F.J.; Van Drie, A.

    1999-01-01

    Two diagnostics, capable of imaging fast, high temperature, plasmas were used on exploding wire experiments at UC Irvine. An atmospheric pressure nitrogen laser (λ=337.1 nm) was used to generate simultaneous shadow and shearing interferogram images with a temporal resolution of ∼1 ns and a spatial resolution of 10 μm. An x-ray backlighter imaged the exploding wire 90 degree with respect to the laser and at approximately the same instant in time. The backlighter spatial resolution as determined by geometry and film resolution was 25 μm. Copper wires of diameters (25, 50, and 100 μm) and steel wire d=25 μm were exploded in vacuum (10 -5 Torr) at a maximum current level of 12 kA, by a rectified marx bank at a voltage of 50 kV and a current rise time (quarter period) of 900 ns. Copper wires which were cleaned and then resistively heated under vacuum to incandescence for several hours prior to high current initiation, exhibited greater expansion velocities at peak current than wires which had not been heated prior to discharge. Axial variations on the surface of the wire observed with the laser were found to correlate with bulk axial mass differences from x-ray backlighting. High electron density, measured near the opaque surface of the exploding wire, suggests that much of the current is shunted outward away from the bulk of the wire. copyright 1999 American Institute of Physics

  5. Reliability Criteria for Thick Bonding Wire.

    Science.gov (United States)

    Dagdelen, Turker; Abdel-Rahman, Eihab; Yavuz, Mustafa

    2018-04-17

    Bonding wire is one of the main interconnection techniques. Thick bonding wire is widely used in power modules and other high power applications. This study examined the case for extending the use of traditional thin wire reliability criteria, namely wire flexure and aspect ratio, to thick wires. Eleven aluminum (Al) and aluminum coated copper (CucorAl) wire samples with diameter 300 μm were tested experimentally. The wire response was measured using a novel non-contact method. High fidelity FEM models of the wire were developed and validated. We found that wire flexure is not correlated to its stress state or fatigue life. On the other hand, aspect ratio is a consistent criterion of thick wire fatigue life. Increasing the wire aspect ratio lowers its critical stress and increases its fatigue life. Moreover, we found that CucorAl wire has superior performance and longer fatigue life than Al wire.

  6. Reliability Criteria for Thick Bonding Wire

    Directory of Open Access Journals (Sweden)

    Turker Dagdelen

    2018-04-01

    Full Text Available Bonding wire is one of the main interconnection techniques. Thick bonding wire is widely used in power modules and other high power applications. This study examined the case for extending the use of traditional thin wire reliability criteria, namely wire flexure and aspect ratio, to thick wires. Eleven aluminum (Al and aluminum coated copper (CucorAl wire samples with diameter 300 μm were tested experimentally. The wire response was measured using a novel non-contact method. High fidelity FEM models of the wire were developed and validated. We found that wire flexure is not correlated to its stress state or fatigue life. On the other hand, aspect ratio is a consistent criterion of thick wire fatigue life. Increasing the wire aspect ratio lowers its critical stress and increases its fatigue life. Moreover, we found that CucorAl wire has superior performance and longer fatigue life than Al wire.

  7. Reliability Criteria for Thick Bonding Wire

    Science.gov (United States)

    Yavuz, Mustafa

    2018-01-01

    Bonding wire is one of the main interconnection techniques. Thick bonding wire is widely used in power modules and other high power applications. This study examined the case for extending the use of traditional thin wire reliability criteria, namely wire flexure and aspect ratio, to thick wires. Eleven aluminum (Al) and aluminum coated copper (CucorAl) wire samples with diameter 300 μm were tested experimentally. The wire response was measured using a novel non-contact method. High fidelity FEM models of the wire were developed and validated. We found that wire flexure is not correlated to its stress state or fatigue life. On the other hand, aspect ratio is a consistent criterion of thick wire fatigue life. Increasing the wire aspect ratio lowers its critical stress and increases its fatigue life. Moreover, we found that CucorAl wire has superior performance and longer fatigue life than Al wire. PMID:29673194

  8. Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110)

    International Nuclear Information System (INIS)

    Tejedor, Paloma; Diez-Merino, Laura; Beinik, Igor; Teichert, Christian

    2009-01-01

    Conductive atomic force microscopy has been used to investigate the effect of atomic hydrogen and step orientation on the growth behavior of InAs on GaAs (110) misoriented substrates. Samples grown by conventional molecular beam epitaxy exhibit higher conductivity on [110]-multiatomic step edges, where preferential nucleation of InAs nanowires takes place by step decoration. On H-terminated substrates with triangular terraces bounded by [115]-type steps, three-dimensional InAs clusters grow selectively at the terrace apices as a result of a kinetically driven enhancement in upward mass transport via AsH x intermediate species and a reduction in the surface free energy.

  9. Beam Position and Phase Monitor - Wire Mapping System

    International Nuclear Information System (INIS)

    Watkins, Heath A.; Shurter, Robert B.; Gilpatrick, John D.; Kutac, Vincent G.; Martinez, Derwin

    2012-01-01

    The Los Alamos Neutron Science Center (LANSCE) deploys many cylindrical beam position and phase monitors (BPPM) throughout the linac to measure the beam central position, phase and bunched-beam current. Each monitor is calibrated and qualified prior to installation to insure it meets LANSCE requirements. The BPPM wire mapping system is used to map the BPPM electrode offset, sensitivity and higher order coefficients. This system uses a three-axis motion table to position the wire antenna structure within the cavity, simulating the beam excitation of a BPPM at a fundamental frequency of 201.25 MHz. RF signal strength is measured and recorded for the four electrodes as the antenna position is updated. An effort is underway to extend the systems service to the LANSCE facility by replacing obsolete electronic hardware and taking advantage of software enhancements. This paper describes the upgraded wire positioning system's new hardware and software capabilities including its revised antenna structure, motion control interface, RF measurement equipment and Labview software upgrades. The main purpose of the wire mapping system at LANSCE is to characterize the amplitude response versus beam central position of BPPMs before they are installed in the beam line. The wire mapping system is able to simulate a beam using a thin wire and measure the signal response as the wire position is varied within the BPPM aperture.

  10. Vibration of signal wires in wire detectors under irradiation

    International Nuclear Information System (INIS)

    Bojko, I.R.; Shelkov, G.A.; Dodonov, V.I.; Ignatenko, M.A.; Nikolenko, M.Yu.

    1995-01-01

    Radiation-induced vibration of signal wires in wire detectors is found and explained. The phenomenon is based on repulsion of a signal wire with a positive potential and a cloud of positive ions that remains after neutralization of the electron part of the avalanche formed in the course of gas amplification. Vibration with a noticeable amplitude may arise from fluctuations of repulsive forces, which act on the wire and whose sources are numerous ion clusters. A formula is obtained which allows wire oscillations to be estimated for all types of wire detectors. Calculation shows that oscillations of signal wires can be substantial for the coordinate accuracy of a detector working in the limited streamer mode at fluxes over 10 5 particles per second per wire. In the proportional mode an average oscillation amplitude can be as large as 20-30 μm at some detector parameters and external radiation fluxes over 10 5 . The experimental investigations show that the proposed model well describes the main features of the phenomenon. 6 refs., 8 figs

  11. Corrosion of Wires on Wooden Wire-Bound Packaging Crates

    Science.gov (United States)

    Samuel L. Zelinka; Stan Lebow

    2015-01-01

    Wire-bound packaging crates are used by the US Army to transport materials. Because these crates may be exposed to harsh environments, they are dip-treated with a wood preservative (biocide treatment). For many years, zinc-naphthenate was the most commonly used preservative for these packaging crates and few corrosion problems with the wires were observed. Recently,...

  12. Improved superconducting magnet wire

    Science.gov (United States)

    Schuller, I.K.; Ketterson, J.B.

    1983-08-16

    This invention is directed to a superconducting tape or wire composed of alternating layers of copper and a niobium-containing superconductor such as niobium of NbTi, Nb/sub 3/Sn or Nb/sub 3/Ge. In general, each layer of the niobium-containing superconductor has a thickness in the range of about 0.05 to 1.5 times its coherence length (which for Nb/sub 3/Si is 41 A) with each copper layer having a thickness in the range of about 170 to 600 A. With the use of very thin layers of the niobium composition having a thickness within the desired range, the critical field (H/sub c/) may be increased by factors of 2 to 4. Also, the thin layers of the superconductor permit the resulting tape or wire to exhibit suitable ductility for winding on a magnet core. These compositions are also characterized by relatively high values of critical temperature and therefore will exhibit a combination of useful properties as superconductors.

  13. Laser induced morphology change of silver colloids: formation of nano-size wires

    International Nuclear Information System (INIS)

    Tsuji, Takeshi; Watanabe, Norihisa; Tsuji, Masaharu

    2003-01-01

    We have performed laser irradiation at 355 nm onto spherical silver colloids in pure water, which were prepared by laser ablation of silver plate in pure water. In addition to size-reduced particles due to fragmentation, we have found that nano-size wire structures were formed in solution for the first time. The width of the wires was in the 10-100 nm range, and the length of long wires was more than 1 μm. Electron diffraction patterns revealed that these wires were composed of pure silver. It was suggested that the wires were formed via fusion of particles photo-thermally melted by laser irradiation

  14. Four-atom period in the conductance of monatomic al wires

    DEFF Research Database (Denmark)

    Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

    2003-01-01

    We present first-principles calculations based on density functional theory for the conductance of monatomic Al wires between Al(111) electrodes. In contrast to the even-odd oscillations observed in other metallic wires, the conductance of the Al wires is found to oscillate with a period of four ...... atoms as the length of the wire is varied. Although local charge neutrality can account for the observed period, it leads to an incorrect phase. We explain the conductance behavior using a resonant transport model based on the electronic structure of the infinite wire....

  15. Self-assembled InAs quantum dots. Properties, modification and emission processes

    International Nuclear Information System (INIS)

    Schramm, A.

    2007-01-01

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  16. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  17. Communication and Wiring in the Cortical Connectome

    Directory of Open Access Journals (Sweden)

    Julian eBudd

    2012-10-01

    Full Text Available In cerebral cortex, the huge mass of axonal wiring that carries information between near and distant neurons is thought to provide the neural substrate for cognitive and perceptual function. The goal of mapping the connectivity of cortical axons at different spatial scales, the cortical connectome, is to trace the paths of information flow in cerebral cortex. To appreciate the relationship between the connectome and cortical function, we need to discover the nature and purpose of the wiring principles underlying cortical connectivity. A popular explanation has been that axonal length is strictly minimized both within and between cortical regions. In contrast, we have hypothesized the existence of a multi-scale principle of cortical wiring where to optimise communication there is a trade-off between spatial (construction and temporal (routing costs. Here, using recent evidence concerning cortical spatial networks we critically evaluate this hypothesis at neuron, local circuit, and pathway scales. We report three main conclusions. First, the axonal and dendritic arbor morphology of single neocortical neurons may be governed by a similar wiring principle, one that balances the conservation of cellular material and conduction delay. Second, the same principle may be observed for fibre tracts connecting cortical regions. Third, the absence of sufficient local circuit data currently prohibits any meaningful assessment of the hypothesis at this scale of cortical organization. To avoid neglecting neuron and microcircuit levels of cortical organization, the connectome framework should incorporate more morphological description. In addition, structural analyses of temporal cost for cortical circuits should take account of both axonal conduction and neuronal integration delays, which appear mostly of the same order of magnitude. We conclude the hypothesized trade-off between spatial and temporal costs may potentially offer a powerful explanation for

  18. Numerical Investigation of Corrugated Wire Mesh Laminate

    Directory of Open Access Journals (Sweden)

    Jeongho Choi

    2013-01-01

    Full Text Available The aim of this work is to develop a numerical model of Corrugated Wire Mesh Laminate (CWML capturing all its complexities such as nonlinear material properties, nonlinear geometry and large deformation behaviour, and frictional behaviour. Development of such a model will facilitate numerical simulation of the mechanical behaviour of the wire mesh structure under various types of loading as well as the variation of the CWML configuration parameters to tailor its mechanical properties to suit the intended application. Starting with a single strand truss model consisting of four waves with a bilinear stress-strain model to represent the plastic behaviour of stainless steel, the finite element model is gradually built up to study single-layer structures with 18 strands of corrugated wire meshes consistency and double- and quadruple-layered laminates with alternating crossply orientations. The compressive behaviour of the CWML model is simulated using contact elements to model friction and is compared to the load-deflection behaviour determined experimentally in uniaxial compression tests. The numerical model of the CWML is then employed to conduct the aim of establishing the upper and lower bounds of stiffness and load capacity achievable by such structures.

  19. Welding wire pressure sensor assembly

    Science.gov (United States)

    Morris, Timothy B. (Inventor); Milly, Peter F., Sr. (Inventor); White, J. Kevin (Inventor)

    1994-01-01

    The present invention relates to a device which is used to monitor the position of a filler wire relative to a base material being welded as the filler wire is added to a welding pool. The device is applicable to automated welding systems wherein nonconsumable electrode arc welding processes are utilized in conjunction with a filler wire which is added to a weld pool created by the electrode arc. The invention senses pressure deviations from a predetermined pressure between the filler wire and the base material, and provides electrical signals responsive to the deviations for actuating control mechanisms in an automatic welding apparatus so as to minimize the pressure deviation and to prevent disengagement of the contact between the filler wire and the base material.

  20. Development of Nb-Ti multifilamentar superconducting wires

    International Nuclear Information System (INIS)

    Otubo, J.

    1986-01-01

    Ni-Ti superconducting wires with multifilamentar configuration were produced, using the grouping technique. Some basic concepts on superconductivity and its main critical parameters are presented. The criteria for stabilizing superconductors in terms of the geometry are studied. The main critical parameters, H c , J c , T c in function of the composition and the metallurgical structure of Ni-Ti alloy are analysed. The development of Ni-Ti superconducting wires is described. (M.C.K.) [pt

  1. Forming Refractory Insulation On Copper Wire

    Science.gov (United States)

    Setlock, J.; Roberts, G.

    1995-01-01

    Alternative insulating process forms flexible coat of uncured refractory insulating material on copper wire. Coated wire formed into coil or other complex shape. Wire-coating apparatus forms "green" coat on copper wire. After wire coiled, heating converts "green" coat to refractory electrical insulator. When cured to final brittle form, insulating material withstands temperatures above melting temperature of wire. Process used to make coils for motors, solenoids, and other electrical devices to be operated at high temperatures.

  2. Control wiring diagrams

    International Nuclear Information System (INIS)

    McCauley, T.M.; Eskinazi, M.; Henson, L.L.

    1989-01-01

    This paper discusses the changes in electrical document requirements that occur when construction is complete and a generating station starts commercial operation. The needs of operations and maintenance (O and M) personnel are analyzed and contrasted with those of construction to illustrate areas in which the construction documents (drawings, diagrams, and databases) are difficult to use for work at an operating station. The paper discusses the O and M electrical documents that the Arizona Nuclear Power Project (ANPP) believes are most beneficial for the three operating units at Palo Verde; these are control wiring diagrams and an associated document cross-reference list. The benefits offered by these new, station O and M-oriented documents are weighted against the cost of their creation and their impact on drawing maintenance

  3. Electroplated superconducting wire

    International Nuclear Information System (INIS)

    Peger, C.H.

    1991-01-01

    A hard chromium solution has been considered the least efficient of all plating solutions. This is not exactly true if the correct plating conditions are used. The accepted efficiency is only 12% but that is only true for the parameters that were used long ago to make the determination. At 12% efficiency it would be impossible to plate Superconductor wire. The world's chromium plating shops have been plating at a .001 (.025u) per hour rate since the turn of the century. Shops in the Cleveland, Ohio area have been limiting their plating rate to .006 (152u) since 1935. A few have used .012 (304u) to .030 (762u) per hour for specialized jobs. These figures would indicate the apparent efficiency of the old 100 to 1 chromium, sulfate solution can be higher than 60%. The industry uses a 3 bus bar tank with wide spacing between anode and cathode. This results in high solution resistance and high heat generation and consequently slow plating rates. The Reversible Rack 2 Bus Bar System uses very close anode to cathode spacings. This results in the high plating rates with improved quality deposits. When first asked to chromium plate pure nickel wire reel to reel in long lengths, companies making reel to reel machines were asked if chromium plating was practical. In every case, the answer was it couldn't be done. Gold, tin and zinc plating was being done reel to reel. Using the same parameters that were used to determine a chromium solution efficiency was only 12%, these other metal solutions check out close to 100%

  4. Growth and Characterization of Indium Doped ZnO Nano wires Using Thermal Evaporation Method

    International Nuclear Information System (INIS)

    Abrar Ismardi; Dee, C.F.; Majlis, B.Y.

    2011-01-01

    Indium doped ZnO nano wires were grown on silicon substrate using vapor thermal deposition method without using any catalyst. Morphological structures were extensively investigated using field emission scanning electron microscopy (FESEM) and show that the nano wires have uniformly hexagonal nano structures with diameters less than 100 nm and lengths from one to a few microns. The sample was measured for elemental composition with energy dispersive X-ray (EDX) spectroscopy, Zn, In and O elements were found on the sample. XRD spectrum of indium doped ZnO nano wires revealed that the nano wires have a high crystalline structure. (author)

  5. X-ray backlighting of two-wire Z-pinch plasma using X-pinch

    International Nuclear Information System (INIS)

    Tong, Zhao; Xiao-Bing, Zou; Ran, Zhang; Xin-Xin, Wang

    2010-01-01

    Two 50-μm Mo wires in parallel used as a Z-pinch load are electrically exploded with a pulsed current rising to 275 kA in 125 ns and their explosion processes are backlighted using an X-pinch as an x-ray source. The backlighting images show clearly the processes similar to those occurring in the initial stages of a cylindrical wire-array Z-pinch, including the electric explosion of single wires characterised by the dense wire cores surrounded by a low-density coronal plasma, the expansion of the exploding wire, the sausage instability (m = 0) in the coronal plasma around each wire, the motion of the coronal plasma as well as the wire core toward the current centroid, the formation of the precursor plasma column with a twist structure something like that of higher mode instability, especially the kink instability (m = 1). (fluids, plasmas and electric discharges)

  6. Etching and oxidation of InAs in planar inductively coupled plasma

    Energy Technology Data Exchange (ETDEWEB)

    Dultsev, F.N., E-mail: fdultsev@thermo.isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation)

    2009-10-15

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH{sub 4}/H{sub 2}/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  7. Etching and oxidation of InAs in planar inductively coupled plasma

    Science.gov (United States)

    Dultsev, F. N.; Kesler, V. G.

    2009-10-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  8. Etching and oxidation of InAs in planar inductively coupled plasma

    International Nuclear Information System (INIS)

    Dultsev, F.N.; Kesler, V.G.

    2009-01-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4 /H 2 /Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  9. Functional display of ice nucleation protein InaZ on the surface of bacterial ghosts.

    Science.gov (United States)

    Kassmannhuber, Johannes; Rauscher, Mascha; Schöner, Lea; Witte, Angela; Lubitz, Werner

    2017-09-03

    In a concept study the ability to induce heterogeneous ice formation by Bacterial Ghosts (BGs) from Escherichia coli carrying ice nucleation protein InaZ from Pseudomonas syringae in their outer membrane was investigated by a droplet-freezing assay of ultra-pure water. As determined by the median freezing temperature and cumulative ice nucleation spectra it could be demonstrated that both the living recombinant E. coli and their corresponding BGs functionally display InaZ on their surface. Under the production conditions chosen both samples belong to type II ice-nucleation particles inducing ice formation at a temperature range of between -5.6 °C and -6.7 °C, respectively. One advantage for the application of such BGs over their living recombinant mother bacteria is that they are non-living native cell envelopes retaining the biophysical properties of ice nucleation and do no longer represent genetically modified organisms (GMOs).

  10. Direct evidence of strain transfer for InAs island growth on compliant Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

    2015-04-13

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

  11. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  12. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

    Science.gov (United States)

    Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

    2018-05-01

    A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

  13. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    International Nuclear Information System (INIS)

    Hendra P, I. B.; Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-01-01

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%

  14. Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Mueller, P.

    1990-01-01

    Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates τ ρ -1 - ρne 2 /m * and τ x -1 2πkub(B)X/h/2π (where X is the Dingle temperature). The measured conduction electron density after irradiation and thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given. (author)

  15. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  16. Studies on the controlled growth of InAs nanostructures on scission surfaces; Untersuchungen zum kontrollierten Wachstum von InAs-Nanostrukturen auf Spaltflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, J.

    2006-01-15

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {l_brace}110{r_brace}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {l_brace}110{r_brace}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  17. Plasma chemistry in wire chambers

    International Nuclear Information System (INIS)

    Wise, J.

    1990-05-01

    The phenomenology of wire chamber aging is discussed and fundamentals of proportional counters are presented. Free-radical polymerization and plasma polymerization are discussed. The chemistry of wire aging is reviewed. Similarities between wire chamber plasma (>1 atm dc-discharge) and low-pressure rf-discharge plasmas, which have been more widely studied, are suggested. Construction and use of a system to allow study of the plasma reactions occurring in wire chambers is reported. A proportional tube irradiated by an 55 Fe source is used as a model wire chamber. Condensable species in the proportional tube effluent are concentrated in a cryotrap and analyzed by gas chromatography/mass spectrometry. Several different wire chamber gases (methane, argon/methane, ethane, argon/ethane, propane, argon/isobutane) are tested and their reaction products qualitatively identified. For all gases tested except those containing methane, use of hygroscopic filters to remove trace water and oxygen contaminants from the gas resulted in an increase in the average molecular weight of the products, consistent with results from low-pressure rf-discharge plasmas. It is suggested that because water and oxygen inhibit polymer growth in the gas phase that they may also reduce polymer deposition in proportional tubes and therefore retard wire aging processes. Mechanistic implications of the plasma reactions of hydrocarbons with oxygen are suggested. Unresolved issues in this work and proposals for further study are discussed

  18. Disorder and Interaction Effects in Quantum Wires

    International Nuclear Information System (INIS)

    Smith, L W; Ritchie, D A; Farrer, I; Griffiths, J P; Jones, G A C; Thomas, K J; Pepper, M

    2012-01-01

    We present conductance measurements of quasi-one-dimensional quantum wires affected by random disorder in a GaAs/AlGaAs heterostructure. In addition to quantised conductance plateaux, we observe structure superimposed on the conductance characteristics when the channel is wide and the density is low. Magnetic field and temperature are varied to characterize the conductance features which depend on the lateral position of the 1D channel formed in a split-gate device. Our results suggest that there is enhanced backscattering in the wide channel limit, which gives rise to quantum interference effects. When the wires are free of disorder and wide, the confinement is weak so that the mutual repulsion of the electrons forces a single row to split into two. The relationship of this topological change to the disorder in the system will be discussed.

  19. Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

    Energy Technology Data Exchange (ETDEWEB)

    Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

    1995-12-31

    Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

  20. Arsenic flux dependence of island nucleation on InAs(001)

    International Nuclear Information System (INIS)

    Grosse, Frank; Barvosa-Carter, William; Zinck, Jenna; Wheeler, Matthew; Gyure, Mark F.

    2002-01-01

    The initial stages of InAs(001) homoepitaxial growth are investigated using a combination of kinetic Monte Carlo simulations based on ab initio density functional theory and scanning tunneling microscopy. In the two dimensional island nucleation mode investigated, the island number density is found to decrease with increasing As. This behavior is explained by a suppression of the effective In-adatom density leading to a reduction in island nucleation. The relevant microscopic processes responsible for this reduction are identified

  1. Reconstruction of an InAs nanowire using geometric and algebraic tomography

    International Nuclear Information System (INIS)

    Pennington, R S; Boothroyd, C B; König, S; Alpers, A; Dunin-Borkowski, R E

    2011-01-01

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality. When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize.

  2. Reconstruction of an InAs nanowire using geometric and algebraic tomography

    DEFF Research Database (Denmark)

    Pennington, Robert S.; König, S.; Alpers, A.

    2011-01-01

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

  3. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Science.gov (United States)

    Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

    2017-07-01

    InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

  4. Geometric factors in the magnetoresistance of n-doped InAs epilayers

    KAUST Repository

    Sun, Jian

    2013-11-27

    We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

  5. Seeded perturbations in wire array z-pinches

    International Nuclear Information System (INIS)

    Robinson, Allen Conrad; Kantsyrev, Victor Leonidovich; Wunsch, Scott Edward; Oliver, Bryan Velten; Lebedev, Sergey V.; Safronova, Alla S.; Maxwell, J.; McKenney, John Lee; Ampleford, David J.; Rapley, J.; Bott, S.C.; Palmer, J.B.A.; Bland, Simon Nicholas; Jones, Brent Manley; Chittenden, Jeremy Paul; Garasi, Christopher Joseph; Hall, Gareth Neville; Mehlhorn, Thomas Alan; Deeney, Christopher

    2004-01-01

    The impact of 3D structure on wire array z-pinch dynamics is a topic of current interest, and has been studied by the controlled seeding of wire perturbations. First, Al wires were etched at Sandia, creating 20% radial perturbations with variable axial wavelength. Observations of magnetic bubble formation in the etched regions during experiments on the MAGPIE accelerator are discussed and compared to 3D MHD modeling. Second, thin NaF coatings of 1 mm axial extent were deposited on Al wires and fielded on the Zebra accelerator. Little or no axial transport of the NaF spectroscopic dopant was observed in spatially resolved K-shell spectra, which places constraints on particle diffusivity in dense z-pinch plasmas. Finally, technology development for seeding perturbations is discussed

  6. Enhancement of giant magnetoimpedance in composite wire with insulator layer

    International Nuclear Information System (INIS)

    Wang, X.Z.; Yuan, W.Z.; Li, X.D.; Ruan, J.Z.; Zhao, Z.J.; Yang, J.X.; Yang, X.L.; Sun, Z.

    2007-01-01

    CuBe/NiFeB and CuBe/Insulator/NiFeB composite wires have been prepared by electroless-deposition. The giant magnetoimpedance (GMI) effect for NiFeB layer with thickness of 3 μm on CuBe core with diameter of 100 μm has been studied. After adding an insulator layer, the maximal GMI ratio of CuBe/Insulator/NiFeB composite wire is much higher than that of CuBe/NiFeB composite wire, and can reach to about 250% at the frequency range of 500 kHz-1 MHz. The results are explained in terms of difference of magnetic structure and different frequency dependence of resistance and reactance of the two kinds of composite wires

  7. Influence of magnetic moment formation on the conductance of coupled quantum wires

    International Nuclear Information System (INIS)

    Puller, V I; Mourokh, L G; Bird, J P; Ochiai, Y

    2005-01-01

    In this paper, we develop a model for the resonant interaction between a pair of coupled quantum wires, under conditions where self-consistent effects lead to the formation of a local magnetic moment in one of the wires. Our analysis is motivated by the experimental results of Morimoto et al (2003 Appl. Phys. Lett. 82 3952), who showed that the conductance of one of the quantum wires exhibits a resonant peak at low temperatures, whenever the other wire is swept into the regime where local-moment formation is expected. In order to account for these observations, we develop a theoretical model for the inter-wire interaction that calculated the transmission properties of one (the fixed) wire when the device potential is modified by the presence of an extra scattering term, arising from the presence of the local moment in the swept wire. To determine the transmission coefficients in this system, we derive equations describing the dynamics of electrons in the swept and fixed wires of the coupled-wire geometry. Our analysis clearly shows that the observation of a resonant peak in the conductance of the fixed wire is correlated to the appearance of additional structure (near 0.75 x 2e 2 /h or 0.25 x 2e 2 /h) in the conductance of the swept wire, in agreement with the experimental results of Morimoto et al

  8. Modeling birds on wires.

    Science.gov (United States)

    Aydoğdu, A; Frasca, P; D'Apice, C; Manzo, R; Thornton, J M; Gachomo, B; Wilson, T; Cheung, B; Tariq, U; Saidel, W; Piccoli, B

    2017-02-21

    In this paper we introduce a mathematical model to study the group dynamics of birds resting on wires. The model is agent-based and postulates attraction-repulsion forces between the interacting birds: the interactions are "topological", in the sense that they involve a given number of neighbors irrespective of their distance. The model is first mathematically analyzed and then simulated to study its main properties: we observe that the model predicts birds to be more widely spaced near the borders of each group. We compare the results from the model with experimental data, derived from the analysis of pictures of pigeons and starlings taken in New Jersey: two different image elaboration protocols allow us to establish a good agreement with the model and to quantify its main parameters. We also discuss the potential handedness of the birds, by analyzing the group organization features and the group dynamics at the arrival of new birds. Finally, we propose a more refined mathematical model that describes landing and departing birds by suitable stochastic processes. Copyright © 2016 Elsevier Ltd. All rights reserved.

  9. Inhomogeneous wire explosion in water

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Kong, H.J.; Lee, S.S.

    1980-01-01

    Inhomogeneous processes are observed in underwater copper wire explosion induced by a condensed capacitor discharge. The wire used is 0.1 mm in diameter and 10 mm long, and the capacitor of 2 μF is charged to 5 KV. A N 2 laser is used for the diagnostic of spatial extension of exploding copper vapour. The photographs obtained in this experiment show unambiguously the inhomogeneous explosion along the exploding wire. The quenching of plasma by the surrounding water inhibits the expansion of the vapour. It is believed the observed inhomogeneous explosion along the wire is located and localized around Goronkin's striae, which was first reported by Goronkin and discussed by Froengel as a pre-breakdown phenomenon. (author)

  10. Topology Optimized Photonic Wire Splitters

    DEFF Research Database (Denmark)

    Frandsen, Lars Hagedorn; Borel, Peter Ingo; Jensen, Jakob Søndergaard

    2006-01-01

    Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm.......Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm....

  11. Composite conductor containing superconductive wires

    Energy Technology Data Exchange (ETDEWEB)

    Larson, W.L.; Wong, J.

    1974-03-26

    A superconductor cable substitute made by coworking multiple rods of superconductive niobium--titanium or niobium--zirconium alloy with a common copper matrix to extend the copper and rods to form a final elongated product which has superconductive wires distributed in a reduced cross-section copper conductor with a complete metallurgical bond between the normal-conductive copper and the superconductor wires contained therein is described. The superconductor cable can be in the form of a tube.

  12. HTS Wire Development Workshop: Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    1994-07-01

    The 1994 High-Temperature Superconducting Wire Development Workshop was held on February 16--17 at the St. Petersburg Hilton and Towers in St. Petersburg, Florida. The meeting was hosted by Florida Power Corporation and sponsored by the US Department of Energy`s Superconductivity Program for Electric Power Systems. The meeting focused on recent high-temperature superconducting wire development activities in the Department of Energy`s Superconductivity Systems program. The meeting opened with a general discussion on the needs and benefits of superconductivity from a utility perspective, the US global competitiveness position, and an outlook on the overall prospects of wire development. The meeting then focused on four important technology areas: Wire characterization: issues and needs; technology for overcoming barriers: weak links and flux pinning; manufacturing issues for long wire lengths; and physical properties of HTS coils. Following in-depth presentations, working groups were formed in each technology area to discuss the most important current research and development issues. The working groups identified research areas that have the potential for greatly enhancing the wire development effort. These areas are discussed in the summary reports from each of the working groups. This document is a compilation of the workshop proceedings including all general session presentations and summary reports from the working groups.

  13. Wire Scanner Motion Control Card

    CERN Document Server

    Forde, S E

    2006-01-01

    Scientists require a certain beam quality produced by the accelerator rings at CERN. The discovery potential of LHC is given by the reachable luminosity at its interaction points. The luminosity is maximized by minimizing the beam size. Therefore an accurate beam size measurement is required for optimizing the luminosity. The wire scanner performs very accurate profile measurements, but as it can not be used at full intensity in the LHC ring, it is used for calibrating other profile monitors. As the current wire scanner system, which is used in the present CERN accelerators, has not been made for the required specification of the LHC, a new design of a wire scanner motion control card is part of the LHC wire scanner project. The main functions of this card are to control the wire scanner motion and to acquire the position of the wire. In case of further upgrades at a later stage, it is required to allow an easy update of the firmware, hence the programmable features of FPGAs will be used for this purpose. The...

  14. Transport properties of different BSCCO wires

    International Nuclear Information System (INIS)

    Metra, P.; Gherardi, L.; Vellego, G.; Masini, R.; Zannella, S.

    1990-01-01

    This paper reports on two classes of solver sheathed BSCCO wires and laminates were prepared from 2223 (Pb substituted) and 2212 powders, respectively, by the powder in tube method. By suitable heat treatments (sintering and annealing below the melting temperature for 2223, melting + annealing for 2212), we obtained sample wires with Tc of ∼110 and ∼85 K respectively, comparable Jc at 77 K (∼10 3 A/cm 2 ), and dramatically different transport behavior. Measurements of critical current at different temperatures and as a function of applied magnetic field were carried out, to characterize the two classes of samples, together with other electrical testing (e.g. d.c. susceptibility) and structural analyses. The granular nature of the higher Tc BSCCO, qualitatively similar to the one of YBCO, was well documented. The melt-processed material showed no apparent granularity, but very strong field dependence of Jc at high temperature. The effect of mechanical deformation on Jc was also investigated by bending samples on different diameters before and after heat treatment. Wires and tapes with 2212 were found to be bendable on very small diameters before treatment, but also the 2223 filled samples were shown to accept significant deformation before sintering

  15. 1 mil gold bond wire study.

    Energy Technology Data Exchange (ETDEWEB)

    Huff, Johnathon; McLean, Michael B.; Jenkins, Mark W.; Rutherford, Brian Milne

    2013-05-01

    In microcircuit fabrication, the diameter and length of a bond wire have been shown to both affect the current versus fusing time ratio of a bond wire as well as the gap length of the fused wire. This study investigated the impact of current level on the time-to-open and gap length of 1 mil by 60 mil gold bond wires. During the experiments, constant current was provided for a control set of bond wires for 250ms, 410ms and until the wire fused; non-destructively pull-tested wires for 250ms; and notched wires. The key findings were that as the current increases, the gap length increases and 73% of the bond wires will fuse at 1.8A, and 100% of the wires fuse at 1.9A within 60ms. Due to the limited scope of experiments and limited data analyzed, further investigation is encouraged to confirm these observations.

  16. Ignition and spread of electrical wire fires

    OpenAIRE

    Huang, Xinyan

    2012-01-01

    Ignition of electrical wires by external heating is investigated in order to gain a better understanding of the initiation of electrical-wire fires. An ignition-to- spread model is developed to systematically explain ignition and the following transition to spread. The model predicts that for a higher-conductance wire it is more difficult to achieve ignition and the weak flame may extinguish during the transition phase because of a large conductive heat loss along the wire core. Wires with tw...

  17. Microwave left-handed composite material made of slim ferrite rods and metallic wires

    International Nuclear Information System (INIS)

    Fang, Xu; Yang, Bai; Li-Jie, Qiao; Hong-Jie, Zhao; Ji, Zhou

    2009-01-01

    This paper reports on experimental study of the microwave properties of a composite material consisting of ferrite and copper wires. It finds that the slim ferrite rods can modify the magnetic field distribution through their anisotropy, so that the ferrite's negative influence on the copper wires' plasma will be reduced. Left-handed properties are observed even in the specimen with close stuck ferrite rods and copper wires. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. High-performance, stretchable, wire-shaped supercapacitors.

    Science.gov (United States)

    Chen, Tao; Hao, Rui; Peng, Huisheng; Dai, Liming

    2015-01-07

    A general approach toward extremely stretchable and highly conductive electrodes was developed. The method involves wrapping a continuous carbon nanotube (CNT) thin film around pre-stretched elastic wires, from which high-performance, stretchable wire-shaped supercapacitors were fabricated. The supercapacitors were made by twisting two such CNT-wrapped elastic wires, pre-coated with poly(vinyl alcohol)/H3PO4 hydrogel, as the electrolyte and separator. The resultant wire-shaped supercapacitors exhibited an extremely high elasticity of up to 350% strain with a high device capacitance up to 30.7 F g(-1), which is two times that of the state-of-the-art stretchable supercapacitor under only 100% strain. The wire-shaped structure facilitated the integration of multiple supercapacitors into a single wire device to meet specific energy and power needs for various potential applications. These supercapacitors can be repeatedly stretched from 0 to 200% strain for hundreds of cycles with no change in performance, thus outperforming all the reported state-of-the-art stretchable electronics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Sublaminar wire migration into the medulla oblongata: a case report.

    Science.gov (United States)

    Koziarz, Alex; Aref, Mohammed; Vinh, Brian; Mensinkai, Arun; Almenawer, Saleh A; Reddy, Kesava

    2017-06-01

    Atlantoaxial procedures have been developed in an effort to ensure solid C1-C2 fusion. However, techniques that involve sublaminar wiring have the potential for neural structure injury. We present the management of a patient who previously underwent Gallie fusion 10 years ago and is presenting with a dislodged titanium wire that has migrated into the medulla oblongata. A 52-year-old female patient known with rheumatoid arthritis presented with truncal ataxia and food regurgitation 10 years after undergoing a C1-C2 Gallie fusion. A computerized tomography (CT) scan revealed that a wire from her Gallie fusion procedure migrated into the medulla oblongata. The patient underwent foramen magnum decompression with C1 bilateral laminectomy, instrumentation, and removal of a migrated wire. Six months later, a CT scan showed that all occipital screws were pulled out. In the revision surgery, new occipital screws were placed with a resultant significant improvement in patient's gait postoperatively. Wire migration as a differential diagnosis should be considered in patients presenting with neurological dysfunction who underwent surgical treatment with sublaminar wire fusion techniques.

  20. Finite element simulation of impact response of wire mesh screens

    Directory of Open Access Journals (Sweden)

    Wang Caizheng

    2015-01-01

    Full Text Available In this paper, the response of wire mesh screens to low velocity impact with blunt objects is investigated using finite element (FE simulation. The woven wire mesh is modelled with homogeneous shell elements with equivalent smeared mechanical properties. The mechanical behaviour of the woven wire mesh was determined experimentally with tensile tests on steel wire mesh coupons to generate the data for the smeared shell material used in the FE. The effects of impacts with a low mass (4 kg and a large mass (40 kg providing the same impact energy are studied. The joint between the wire mesh screen and the aluminium frame surrounding it is modelled using contact elements with friction between the corresponding elements. Damage to the screen of different types compromising its structural integrity, such as mesh separation and pulling out from the surrounding frame is modelled. The FE simulation is validated with results of impact tests conducted on woven steel wire screen meshes.

  1. Mechanical characterisation of orthodontic superelastic Ni-Ti wires

    Energy Technology Data Exchange (ETDEWEB)

    Arrigoni, M.; Pietrabissa, R. [Politecnico di Milano, Milano (Italy). Lab. of Biological Structure Mechanics; Auricchio, F.; Petrini, L. [Politecnico di Milano, Milano (Italy). Lab. of Biological Structure Mechanics; Pavia Univ. (Italy). Dept. of Structural Mechanics; Cacciafesta, V. [Politecnico di Milano, Milano (Italy). Lab. of Biological Structure Mechanics; Pavia Univ. (Italy). Dept. of Orthodontia

    2001-11-01

    Nowadays, the orthodontic treatment is improving thanks to the introduction of Ni-Ti super-elastic alloy wires in the ordinary therapy. Indeed, laboratory tests performed in the last decade have shown that Ni-Ti superelastic wires are able to satisfy the ideal requirements for fixed arch-wire appliance: high flexibility, minimal distortion or plastic deformation, light constant force production over a wide range of displacements. On the other hand, many orthodontic companies produce Ni-Ti arch-wires, without giving detailed specifications on their superelastic characteristics. To improve the knowledge on real properties for these products, an experimental campaign on different commercial arch-wires has been started at the Laboratory of Biological Structure Mechanics (LABS) at the Politecnico di Milano (Italy). This work presents the first step of the research, concerning the comparison between the behaviour of four types of wires (two produced by ORMCO and two produced by 3M/Unitek) under monotonic and cyclic isothermal tensile tests. The results show significant differences between the products in terms of elastic modulus, stress values of the loading-unloading plateau, hysteresis amplitude, spring-back capacity, shape recovery capability, strain rate effect and fatigue behaviour. (orig.)

  2. Investigation of ball bond integrity for 0.8 mil (20 microns) diameter gold bonding wire on low k die in wire bonding technology

    Science.gov (United States)

    Kudtarkar, Santosh Anil

    Microelectronics technology has been undergoing continuous scaling to accommodate customer driven demand for smaller, faster and cheaper products. This demand has been satisfied by using novel materials, design techniques and processes. This results in challenges for the chip connection technology and also the package technology. The focus of this research endeavor was restricted to wire bond interconnect technology using gold bonding wires. Wire bond technology is often regarded as a simple first level interconnection technique. In reality, however, this is a complex process that requires a thorough understanding of the interactions between the design, material and process variables, and their impact on the reliability of the bond formed during this process. This research endeavor primarily focused on low diameter, 0.8 mil thick (20 mum) diameter gold bonding wire. Within the scope of this research, the integrity of the ball bond formed by 1.0 mil (25 mum) and 0.8 mil (20 mum) diameter wires was compared. This was followed by the evaluation of bonds formed on bond pads having doped SiO2 (low k) as underlying structures. In addition, the effect of varying the percentage of the wire dopant, palladium and bonding process parameters (bonding force, bond time, ultrasonic energy) for 0.8 mil (20 mum) bonding wire was also evaluated. Finally, a degradation empirical model was developed to understand the decrease in the wire strength. This research effort helped to develop a fundamental understanding of the various factors affecting the reliability of a ball bond from a design (low diameter bonding wire), material (low k and bonding wire dopants), and process (wire bonding process parameters) perspective for a first level interconnection technique, namely wire bonding. The significance of this research endeavor was the systematic investigation of the ball bonds formed using 0.8 mil (20 microm) gold bonding wire within the wire bonding arena. This research addressed low k

  3. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  4. A Photovoltaic InAs Quantum-Dot Infrared Photodetector

    International Nuclear Information System (INIS)

    Guang-Hua, Tang; Bo, Xu; Li-Wen, Jiang; Jin-Xia, Kong; Ning, Kong; De-Chun, Liang; Ping, Liang; Xiao-Ling, Ye; Peng, Jin; Feng-Qi, Liu; Yong-Hai, Chen; Zhan-Guo, Wang

    2010-01-01

    A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2–7 μm has been obtained with peaks at 3.1, 4.8 and 5.7 μm. The bandgap energies of GaAs and Alo.2Gao.sAs at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure

  5. Technical innovation: Wire guided ductography

    International Nuclear Information System (INIS)

    Aslam, Muhammad Ovais; Ramadan, Salwa; Al-Adwani, Muneera

    2012-01-01

    To introduce an easy and improved technique for performing ductography using inexpensive easily available intravenous cannula. Guide wire: Prolene/Surgipro 3-0 (Polypropylene mono filament non-absorbable surgical suture). A plastic 26 G intravenous cannula. Disposable syringe 2 ml. Non-ionic contrast (low density like Omnipaque 240 mg I/I). The guide wire (Prolene 3-0) is introduced into the orifice of the duct heaving discharge and 26 G intravenous plastic cannula is then passed over the guide wire. The cannula is advanced in the duct over guide wire by spinning around it. When the cannula is in place the guide wire is removed. Any air bubbles present in the hub of the cannula can be displaced by filling the hub from bottom upwards with needle attached to contrast filled syringe. 0.2–0.4 ml non-ionic contrast is gently injected. Injection is stopped if the patient has pain or burning. Magnified cranio-caudal view is obtained with cannula tapped in place and gentle compression is applied with the patient sitting. If duct filling is satisfactory a 90* lateral view is obtained. A successful adaptation of the technique for performing ductography is presented. The materials required for the technique are easily available in most radiology departments and are inexpensive, thus making the procedure comfortable for the patient and radiologist with considerable cost effectiveness.

  6. Californium Recovery from Palladium Wire

    Energy Technology Data Exchange (ETDEWEB)

    Burns, Jon D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2014-08-01

    The recovery of 252Cf from palladium-252Cf cermet wires was investigated to determine the feasibility of implementing it into the cermet wire production operation at Oak Ridge National Laboratory’s Radiochemical Engineering Development Center. The dissolution of Pd wire in 8 M HNO3 and trace amounts of HCl was studied at both ambient and elevated temperatures. These studies showed that it took days to dissolve the wire at ambient temperature and only 2 hours at 60°C. Adjusting the ratio of the volume of solvent to the mass of the wire segment showed little change in the kinetics of dissolution, which ranged from 0.176 mL/mg down to 0.019 mL/mg. A successful chromatographic separation of 153Gd, a surrogate for 252Cf, from Pd was demonstrated using AG 50x8 cation exchange resin with a bed volume of 0.5 mL and an internal diameter of 0.8 cm.

  7. Electron Raman scattering in quantum well wires

    International Nuclear Information System (INIS)

    Zhao Xiangfu; Liu Cuihong

    2007-01-01

    Electron Raman scattering (ERS) is investigated in a semiconductor quantum well wire (QWW) of cylindrical geometry for T=0K and neglecting phonon-assisted transitions. The differential cross-section (DCS) involved in this process is calculated as a function of a scattering frequency and the cylindrical radius. Electron states are confined within a QWW. Single parabolic conduction and valence bands are assumed. The selection rules are studied. Singularities in the spectra are interpreted for various cylindrical radii. ERS discussed here can provide direct information about the electron band structure of the system

  8. Spin interactions in InAs quantum dots and molecules

    Energy Technology Data Exchange (ETDEWEB)

    Doty, M.F.; Ware, M.E.; Stinaff, E.A.; Scheibner, M.; Bracker, A.S.; Ponomarev, I.V.; Badescu, S.C.; Reinecke, T.L.; Gammon, D. [Naval Research Lab, Washington, DC 20375 (United States); Korenev, V.L. [A.F. Ioffe Physical Technical Institute, St. Petersburg 194021 (Russian Federation)

    2006-12-15

    Spin interactions between particles in quantum dots or quantum dot molecules appear as fine structure in the photoluminescence spectra. Using the understanding of exchange interactions that has been developed from single dot spectra, we analyze the spin signatures of coupled quantum dots separated by a wide barrier such that inter-dot interactions are negligible. We find that electron-hole exchange splitting is directly evident. In dots charged with an excess hole, an effective hole-hole interaction can be turned on through tunnel coupling. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Adhesion strength study of IBAD-MOCVD-based 2G HTS wire using a peel test

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y., E-mail: yzhang@superpower-inc.com [SuperPower Inc., 450 Duane Avenue, Schenectady, NY 12304 (United States); Hazelton, D.W.; Knoll, A.R.; Duval, J.M.; Brownsey, P.; Repnoy, S.; Soloveichik, S.; Sundaram, A.; McClure, R.B. [SuperPower Inc., 450 Duane Avenue, Schenectady, NY 12304 (United States); Majkic, G.; Selvamanickam, V. [University of Houston, 4800 Calhoun Road, Houston, TX 77204 (United States)

    2012-02-15

    A peel test was used to study the adhesion strength of a commercial grade 2G HTS wire which features a characteristic multilayer structure with the rare earth-based MOCVD superconducting film deposited on an IBAD-MgO template. The peel test could be carried out at various peeling angles (from 90 Degree-Sign to 180 Degree-Sign) and the peel strength of a wire was defined as the steady-state peeling load determined from a load-displacement curve. The test results had good reproducibility and accuracy, making the test a reliable and useful method for studying the adhesion strength of the wire. By characterizing the peeled surfaces the weakest interface in a wire could be identified. The peel strength data of the wire was analyzed together with the performance of the experimental magnet coils fabricated using the wire. The effect of the silver contact layer annealing on the peel strength is discussed.

  10. The influence of drawing speed on surface topography of high carbon steel wires

    Directory of Open Access Journals (Sweden)

    M. Suliga

    2017-01-01

    Full Text Available In this work the influence of the drawing speed on surface topography of high carbon steel wires has been assessed. The drawing process of f 5,5 mm wire rod to the final wire of f 1,7 mm was conducted in 12 passes by means of a modern Koch multi-die drawing machine. The drawing speeds in the last passes were: 5, 10, 15, 20 and 25 m/s. For final wires f 1,7 mm the three-dimensional analysis of the wire surface topography investigation was determined. It has been proved that the wire topography in the drawing process is characterized by a random anisotropy and the amount of directing the geometrical structure of the surface depends on the drawing speed.

  11. Adhesion strength study of IBAD-MOCVD-based 2G HTS wire using a peel test

    International Nuclear Information System (INIS)

    Zhang, Y.; Hazelton, D.W.; Knoll, A.R.; Duval, J.M.; Brownsey, P.; Repnoy, S.; Soloveichik, S.; Sundaram, A.; McClure, R.B.; Majkic, G.; Selvamanickam, V.

    2012-01-01

    A peel test was used to study the adhesion strength of a commercial grade 2G HTS wire which features a characteristic multilayer structure with the rare earth-based MOCVD superconducting film deposited on an IBAD-MgO template. The peel test could be carried out at various peeling angles (from 90° to 180°) and the peel strength of a wire was defined as the steady-state peeling load determined from a load-displacement curve. The test results had good reproducibility and accuracy, making the test a reliable and useful method for studying the adhesion strength of the wire. By characterizing the peeled surfaces the weakest interface in a wire could be identified. The peel strength data of the wire was analyzed together with the performance of the experimental magnet coils fabricated using the wire. The effect of the silver contact layer annealing on the peel strength is discussed.

  12. Coupling electromagnetic pulse-shaped waves into wire-like interconnection structures with a non-linear protection – Time domain calculations by the PEEC method

    Directory of Open Access Journals (Sweden)

    G. Wollenberg

    2004-01-01

    Full Text Available An interconnection system whose loads protected by a voltage suppressor and a low-pass filter against overvoltages caused by coupling pulse-shaped electromagnetic waves is analyzed. The external wave influencing the system is assumed as a plane wave with HPM form. The computation is provided by a full-wave PEEC model for the interconnection structure incorporated in the SPICE code. Thus, nonlinear elements of the protection circuit can be included in the calculation. The analysis shows intermodulation distortions and penetrations of low frequency interferences caused by intermodulations through the protection circuits. The example examined shows the necessity of using full-wave models for interconnections together with non-linear circuit solvers for simulation of noise immunity in systems protected by nonlinear devices.

  13. Study of the core gaps formed accidentally during wire explosion

    International Nuclear Information System (INIS)

    Tkachenko, S. I.; Khattatov, T. A.; Romanova, V. M.; Mingaleev, A. R.; Baksht, R. B.; Oreshkin, V. I.; Shelkovenko, T. A.; Pikuz, S. A.

    2012-01-01

    During wire explosion, along with striations (a regular structure with alternating lower and higher density bands), low-density regions the characteristic axial size of which differs substantially from that of striations and can reach 1–2 mm are also observed in the discharge channel. Such irregular structures came to be known as “gaps” (D. B. Sinars et al., Phys. Plasmas 8, 216 (2001)). In the present study, the mechanism of the formation of core gaps during explosions of 25- and 50-μm-diameter copper and nickel wires in air is investigated. It is shown that the specific energy deposited in the gap region substantially exceeds the average specific energy deposited in the wire material.

  14. Magnetoresistance peculiarities of bismuth wires in high magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Condrea, E., E-mail: condrea@nano.asm.md [Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, 2028 Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 51-421 Wroclaw (Poland); Gilewski, A. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 51-421 Wroclaw (Poland); MagNet, 50-421 Wroclaw (Poland); Nicorici, A. [Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, 2028 Chisinau, Republic of Moldova (Moldova, Republic of)

    2016-03-11

    Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found. - Highlights: • Glass-coated single-crystalline Bi wires attain high limit of elastic strain of up to 3.0%. • Selective modification of the electronic structure of Bi wires is obtained by combining a high magnetic field and uniaxial strain. • The correlation between the exit of the lowest Landau level of electrons and Lifshitz transition was found.

  15. Magnetoresistance peculiarities of bismuth wires in high magnetic field

    International Nuclear Information System (INIS)

    Condrea, E.; Gilewski, A.; Nicorici, A.

    2016-01-01

    Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found. - Highlights: • Glass-coated single-crystalline Bi wires attain high limit of elastic strain of up to 3.0%. • Selective modification of the electronic structure of Bi wires is obtained by combining a high magnetic field and uniaxial strain. • The correlation between the exit of the lowest Landau level of electrons and Lifshitz transition was found.

  16. Phospholipid analysis and fractional reconstitution of the ice nucleation protein activity purified from Escherichia coli overexpressing the inaZ gene of Pseudomonas syringae.

    Science.gov (United States)

    Palaiomylitou, M A; Kalimanis, A; Koukkou, A I; Drainas, C; Anastassopoulos, E; Panopoulos, N J; Ekateriniadou, L V; Kyriakidis, D A

    1998-08-01

    Ice nucleation protein was partially purified from the membrane fraction of E. coli carrying inaZ from Pseudomonas syringae. The ice nucleation protein was totally localized in the bacterial envelope and was extracted by either salt (0.25 M NH4Cl) or the nonionic detergent Tween 20. The extracted protein was partially purified by sequential passage through DEAE-52 cellulose and Sephacryl-S400 columns. The activity of the purified protein was lost after treatment with phospholipase C, and its activity was subsequently restored by addition of the naturally occurring lipid phosphatidylethanolamine. These results suggest that ice nucleation proteins have a requirement for lipids that reconstitute a physiological hydrophobic environment similar to the one existing in vivo, to attain and maintain a structure that enables ice catalysis. Copyright 1998 Academic Press.

  17. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  18. Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaowen [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China); Wang, Qi; Li, Senlin; Chen, C.Q. [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Sun, Liaoxin; Luo, X.D.; Zhang, Bo [Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China)

    2015-04-01

    In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing the photoluminescence spectra of InAs (QDs)/GaInAsP/InP at different temperatures and excitation powers, the origin of each emission is verified. And it is found that, with the temperature increasing, the emission intensity of GaInAsP wetting layers decreases firstly (T < 150 K) and then increases from 160 K to room temperature. By analyzing the experimental results of three samples with different QDs' sizes, a competitive emission between InAs QDs and GaInAsP wetting layers is confirmed. (orig.)

  19. Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots

    International Nuclear Information System (INIS)

    Khatsevich, S.; Rich, D.H.; Kim, Eui-Tae; Madhukar, A.

    2005-01-01

    We have examined state filling and thermal activation of carriers in buried InAs self-assembled quantum dots (SAQDs) with excitation-dependent cathodoluminescence (CL) imaging and spectroscopy. The InAs SAQDs were formed during molecular-beam epitaxial growth of InAs on undoped planar GaAs (001). The intensities of the ground- and excited-state transitions were analyzed as a function of temperature and excitation density to study the thermal activation and reemission of carriers. The thermal activation energies associated with the thermal quenching of the luminescence were measured for ground- and excited-state transitions of the SAQDs, as a function of excitation density. By comparing these activation energies with the ground- and excited-state transition energies, we have considered various processes that describe the reemission of carriers. Thermal quenching of the intensity of the QD ground- and first excited-state transitions at low excitations in the ∼230-300-K temperature range is attributed to dissociation of excitons from the QD states into the InAs wetting layer. At high excitations, much lower activation energies of the ground and excited states are obtained, suggesting that thermal reemission of single holes from QD states into the GaAs matrix is responsible for the observed temperature dependence of the QD luminescence in the ∼230-300-K temperature range. The dependence of the CL intensity of the ground-and first excited-state transition on excitation density was shown to be linear at all temperatures at low-excitation density. This result can be understood by considering that carriers escape and are recaptured as excitons or correlated electron-hole pairs. At sufficiently high excitations, state-filling and spatial smearing effects are observed together with a sublinear dependence of the CL intensity on excitation. Successive filling of the ground and excited states in adjacent groups of QDs that possess different size distributions is assumed to

  20. Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

    Science.gov (United States)

    Song, Young Jae; Erwin, Steven C; Rutter, Gregory M; First, Phillip N; Zhitenev, Nikolai B; Stroscio, Joseph A

    2009-12-01

    We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

  1. Nonlinear absorption and receptivity of the third order in InAs infrared region

    International Nuclear Information System (INIS)

    Musayev, M.A.

    2005-01-01

    Nonlinear absorption and receptivity of the third order and coefficient nonlinear absorption in InAs n-type with different degree of alloying was measured. Obtained score considerably exceed sense, calculated on the basis of the models describing nonlinear receptivity of electrons, situated in the nonparabolic area of conductivity. It was shown that, observable deviations withdraw; if in the calculation apply energy dissipation of electrons. Growth of the efficiency under four-wave interaction in low-energy-gap semiconductors confines nonlinear absorption of interacting waves

  2. The third order nonlinear susceptibility of InAs at infrared region

    International Nuclear Information System (INIS)

    Musayev, M.A.

    2008-01-01

    Nonlinear susceptibilities of the third order and coefficient of nonlinear absorption in InAs n-type with a different degree of a doping have been measured. The values of the third order nonlinear susceptibilities have derived from these measurements essentially exceed the values calculated on the basis of model featuring nonlinear susceptibility of electrons, being in conduction-band nonparabolicity. It has been shown that the observable discrepancy has been eliminated, if in calculation a dissipation of energy of electrons has been considered. Growth of efficiency at four-wave mixingin narrow-gap semiconductors has been restricted to nonlinear absorption of interacting waves

  3. Jačina sveze adhezijskih materijala na tvrda zubna tkiva

    OpenAIRE

    Žagar, Polona

    2017-01-01

    Adhezija se odnosi na povezivanje atoma i molekula na kontaktnim površinama različitih materijala. Adhezijske sustave možemo podjeliti prema interakciji sa tvrdim zubnim tkivima na jetkajuće ispirajuće, samojetkajuće i staklenoionomerne sustave. Univerzalni adhezivi su najnovija generacija adheziva na tržištu. Mogu se koristiti kao jetkajući ispirajući i samojetkajući sustavi. U ovom radu je ispitivana jačina adhezijske sveze s caklinom jetkajuće ispirajućim i univerzalnim adheziv...

  4. ODNOS ZAPOSLENIH V VRTCU DO ZDRAVEGA NAČINA ŽIVLJENJA

    OpenAIRE

    Cesarec, Anja

    2009-01-01

    Diplomsko delo predstavlja temo odnos zaposlenih v vrtcu do zdravega načina življenja. Predstavili smo zdravje, dejavnike, ki vplivajo na stopnjo zdravja in dejavnike, ki vplivajo na življenjski slog, kot so kajenje tobaka, način prehranjevanja, telesno aktivnost, uživanje nedovoljenih drog in alkohola ter stres. Posebno poglavje pa je namenjeno skrbi za zdrav način življenja. V empiričnem delu so predstavljeni rezultati raziskave, narejene v vrtcu Rogaška Slatina, enota Izvir. V raziskavo, k...

  5. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    International Nuclear Information System (INIS)

    Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F.

    2014-01-01

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  6. Spin-lattice relaxation times and knight shift in InSb and InAs

    International Nuclear Information System (INIS)

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  7. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-11-07

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  8. Synthesise of Zn O nano wires by direct oxidation method

    International Nuclear Information System (INIS)

    Farbod, M.; Ahangarpour, A.

    2007-01-01

    Zn O is a semiconductor which has a direct and wide energy band which is about 3.37 eV at room temperature. It has various applications from UV lasers, sensitive sensors, solar cells to photo catalysis applications. Zn O has different nano structures such as nanoparticles, nano wires, nano rods, nano tubes and nano belts. The one dimensional Zn O nano structures such as nano wires are very important because of their applications in nano electronics and nano photonics so different methods have been proposed to synthesize them. In this work large scale of Zn O nano wires are produced by direct oxidation a Zn substrate (which was cleaned by chemical methods) in air or oxygen atmosphere at 400 d eg C . Nano wires were investigated by scanning electron microscopy and energy dispersive x-ray measurements. Their diameter is about 30-150 nanometer and their length is about several micrometer. This method which acts without any catalyst is a convenient method to synthesis semiconductor nano wires.

  9. Emission and elastic strain in InGaAs/GaAs quantum wells with embedded InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Vega-Macotela, L.G.; Polupan, G. [ESIME - Instituto Politecnico Nacional, Mexico D.F. 07738 (Mexico); Shcherbyna, Ye. [National Technical University-' ' KPI' ' , Kiev 03057 (Ukraine)

    2012-07-15

    Photoluminescence (PL) spectra have been studied in the symmetric GaAs/In{sub 0.15}Ga{sub 0.85}As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), grown at different temperatures from the range 470-535 C. The increase of QD growth temperature is accompanied by decreasing the QD surface density and the enlargement of QD lateral diameters. Simultaneously the variation of the PL intensity and PL peak positions none monotonously have been detected. To understand the reason of the variation of PL intensity and peak positions the PL temperature dependences and the X-ray diffraction (XRD) at low angles (1.75-1.92 ) have been studied. The fitting procedure is applied to analysis the temperature shift of PL peak positions. Fitting has been done on the base of empirical expression for the band gap shrinkage that uses the Einstein temperature parameter. The character non monotonous for the Ga/In inter diffusion versus QD growth temperatures has been revealed. The XRD study has detected the high intensity peaks that corresponds to the diffraction of X-ray beam from the (311) crystal planes in GaAs QWs. The position of XRD peaks in the structures with QD grown at 490-510 C is very close to the angles related to the diffraction from (311) planes in the bulk GaAs. In QD structures with QD grown at 470 and 525-535 C the (311) XRD peaks shift to the higher diffraction angles that testifies on the essential compressive strains in these structures. The reason of the variation non monotonously of elastic strain versus QD densities has been discussed (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Optical characterisation of photonic wire and photonic crystal waveguides fabricated using nanoimprint lithography

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Lavrinenko, Andrei

    2006-01-01

    We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography.......We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography....

  11. Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Guo, Wenlong [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Xu, Sheng [School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Qu, Changqing; Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2014-10-30

    Highlights: • The capacitance of graphene/tantalum (Ta) wire electrodes is firstly reported. • Graphene was grown on the Ta surface by hot-filament chemical vapor deposition. • Graphene/Ta wire structure is favorable for fast ion and electron transfer. • The graphene/Ta wire electrode shows high capacitive properties. - Abstract: This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3–3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na{sub 2}SO{sub 4} aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g{sup −1} at current density of 0.5 A g{sup −1}. The capacitance remains at about 84% after 1000 cycles at 10 A g{sup −1}. The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices.

  12. Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

    International Nuclear Information System (INIS)

    Li, Mingji; Guo, Wenlong; Li, Hongji; Xu, Sheng; Qu, Changqing; Yang, Baohe

    2014-01-01

    Highlights: • The capacitance of graphene/tantalum (Ta) wire electrodes is firstly reported. • Graphene was grown on the Ta surface by hot-filament chemical vapor deposition. • Graphene/Ta wire structure is favorable for fast ion and electron transfer. • The graphene/Ta wire electrode shows high capacitive properties. - Abstract: This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3–3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na 2 SO 4 aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g −1 at current density of 0.5 A g −1 . The capacitance remains at about 84% after 1000 cycles at 10 A g −1 . The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices

  13. Telecommuting: The Wired Worker.

    Science.gov (United States)

    Nilles, Jack M.

    1982-01-01

    Examines the use of home computers and how they allow the worker to work at home rather than commuting. Discusses the growing trend of telecommuting, cost of operation, how it will affect company structure, and productivity. (CT)

  14. Vulnerabilidad sísmica y capacidad de carga de un puente atirantado basados en confiabilidad estructural Seismic vulnerability and loading capacity of a wire strained bridge based on structural reliability

    Directory of Open Access Journals (Sweden)

    Edgar Muñoz

    2010-08-01

    tests, trials tests on material mechanical properties, environmental vibrations, measurements on the effects of traffic load, wireless instrumentation, loading tests, wire strainers tensile strength, etc. Additionally, the study explains structural models on finite elements, which were developed for the bridge, as well as its calibration process based on the loading test, and dynamical properties determined on experimental basis. Furthermore, the study indicates the way stress records collection of all structural elements was conducted, during the construction process, in accordance with the job site log-book. As for reliability, a seismic threat analysis was made as well as dynamic responses on the bridge site, where nine spectrums were obtained at different return periods. By studying strength probability curves and seismic loads of pylons, it was found they have reliability indexes in accordance with recommendations by the international regulations. However, one of the superstructure's elements, which were introduced to evaluate its capacity on traffic effects, has a reliability index far higher than the ranges recommended by international regulations. Finally, some wire strainers have higher level tensions than specifications admitted during its design and international recommendations for these kinds of bridges.

  15. Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Vasilopoulou, M., E-mail: mariva@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Stathopoulos, N.A.; Savaidis, S.A. [Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Kostis, I. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Papadimitropoulos, G. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Davazoglou, D., E-mail: d.davazoglou@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece)

    2015-09-30

    Graphical abstract: In this work we perform successful engineering of the anode of organic photovoltaics based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester blends by using metal oxide transport layers exhibiting shallow gap states which act as a barrier-free path for hole transport toward the anode. - Highlights: • Interface engineering of the anode. • Organic photovoltaics (OPVs). • Shallow gap states. • Barrier-free hole transport. • Design rules for interface engineering in OPVs. - Abstract: In this work we use hydrogen deposited molybdenum and tungsten oxides (chemically described as H:MO{sub x}x ≤ 3 where M = Mo or W) to control the energetics at the anode of bulk heterojunction (BHJ) organic photovoltaics (OPVs) based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester (P3HT:PC{sub 71}BM) blends. Significantly improved current densities and open circuit voltages were achieved as a result of improved hole transport from the P3HT highest occupied molecular orbital (HOMO) toward indium tin oxide (ITO) anode. This was attributed to the formation of shallow gap states in these oxides which are located just below the Fermi level and above the polymer HOMO and thus may act as a barrier-free path for the extraction of holes. Consequently, these states can be used for controlling the energetic structure of the anode of OPVs. By using ultraviolet photoelectron spectroscopy it was found that dependent on the deposition conditions these gap states and work function of the metal oxides may be tailored to contribute to the precise alignment of the HOMO of the organic semiconductor (OSC) with the Fermi level of the anode electrode resulting in further enhancement of the device performance.

  16. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  17. Spectroscopy of shallow InAs/InP quantum wire nanostructures

    International Nuclear Information System (INIS)

    Mazur, Yu I; Dorogan, V G; Noda, S; Salamo, G J; Bierwagen, O; Masselink, W T; Tarasov, G G; Zhuchenko, Z Ya; DeCuir Jr, E A; Manasreh, M O

    2009-01-01

    A comprehensive investigation of the optical properties of InAs/InP(001) quantum wires (QWrs) and their parent quantum well system formed by the deposition of 4 ML (monolayers) of InAs on InP is carried out by means of temperature dependent photoluminescence (PL) and Fourier transform infrared spectroscopy. Unusual two-branch switching of the excitonic PL band maxima is revealed in the temperature dependence for both wires and wells. This is interpreted in terms of the thermal activation of excitonic ground states of the confined nanostructures. Strong modification of the absorbance line shape leading to the appearance of flat spectral regions in the room temperature spectrum of a QWr sample is interpreted in terms of thermally induced change of the dimensionality: from 1D to anisotropic 2D. This change of dimensionality is detected also in the polarized absorbance measurements through the disappearance or significant reduction of the polarization anisotropy in the regions of the hh1-e1 (hh: heavy hole; e: electron) and lh1-e1 (lh: light hole) transitions in QWrs.

  18. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

    Science.gov (United States)

    Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

    2016-05-01

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  19. Formation of anodic layers on InAs (111)III. Study of the chemical composition

    Energy Technology Data Exchange (ETDEWEB)

    Valisheva, N. A., E-mail: valisheva@thermo.isp.nsc.ru; Tereshchenko, O. E. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Prosvirin, I. P.; Kalinkin, A. V. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation); Goljashov, V. A. [Novosibirsk State University (Russian Federation); Levtzova, T. A. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Bukhtiyarov, V. I. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2012-04-15

    The chemical composition of {approx}20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH{sub 4}F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH{sub 4}F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF{sub x}/InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O{sup 2-} and/or OH{sup -} groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.

  20. Transport and performance of a gate all around InAs nanowire transistor

    International Nuclear Information System (INIS)

    Alam, Khairul

    2009-01-01

    The transport physics and performance metrics of a gate all around an InAs nanowire transistor are studied using a three-dimensional quantum simulation. The transistor action of an InAs nanowire transistor occurs by modulating the transmission coefficient of the device. This action is different from a conventional metal-oxide-semiconductor field effect transistor, where the transistor action occurs by modulating the charge in the channel. The device has 82% tunneling current in the off-state and 81% thermal current in the on-state. The two current components become equal at a gate bias at which an approximate source-channel flat-band condition is achieved. Prior to this gate bias, the tunneling current dominates and the thermal current dominates beyond it. The device has an on/off current ratio of 7.84 × 10 5 and an inverse subthreshold slope of 63 mV dec −1 . The transistor operates in the quantum capacitance limit with a normalized transconductance value of 14.43 mS µm −1 , an intrinsic switching delay of 90.1675 fs, and an intrinsic unity current gain frequency of 6.8697 THz

  1. Transparency in nanophotonic quantum wires

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)

    2009-03-28

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  2. Transparency in nanophotonic quantum wires

    International Nuclear Information System (INIS)

    Singh, Mahi R

    2009-01-01

    We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.

  3. Fabrication of tungsten wire needles

    International Nuclear Information System (INIS)

    Roder, A.

    1983-02-01

    Fine point needles for field emissoin are conventionally produced by electrolytically or chemically etching tungsten wire. Points formed in this manner have a typical tip radius of about 0.5 microns and a cone angle of some 30 degrees. The construction of needle matrix detector chambers has created a need for tungsten needles whose specifications are: 20 mil tungsten wire, 1.5 inch total length, 3 mm-long taper (resulting in a cone angle of about 5 degrees), and 25 micron-radius point (similar to that found on sewing needles). In the process described here for producing such needles, tungsten wire, immersed in a NaOH solution and in the presence of an electrode, is connected first to an ac voltage and then to a dc supply, to form a taper and a point on the end of the wire immersed in the solution. The process parameters described here are for needles that will meet the above specifications. Possible variations will be discussed under each approprite heading

  4. Influence of nitrogen on the growth and the properties of InAs quantum dots; Einfluss von Stickstoff auf das Wachstum und die Eigenschaften von InAs-Quantenpunkten

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, O.

    2004-11-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  5. [Mechanics analysis of fracture of orthodontic wires].

    Science.gov (United States)

    Wang, Yeping; Sun, Xiaoye; Zhang, Longqi

    2003-03-01

    Fracture problem of orthodontic wires was discussed in this paper. The calculation formulae of bending stress and tensile stress were obtained. All main factors that affect bending stress and tensile stress of orthodontic wires were analyzed and discussed. It was concluded that the main causes of fracture of orthodontic wires were fatigue and static disruption. Some improving proposals for preventing fracture of orthodontic wires were put forward.

  6. 49 CFR 236.74 - Protection of insulated wire; splice in underground wire.

    Science.gov (United States)

    2010-10-01

    ... underground wire. 236.74 Section 236.74 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RULES, STANDARDS, AND INSTRUCTIONS GOVERNING... wire; splice in underground wire. Insulated wire shall be protected from mechanical injury. The...

  7. 49 CFR 234.241 - Protection of insulated wire; splice in underground wire.

    Science.gov (United States)

    2010-10-01

    ... underground wire. 234.241 Section 234.241 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION, DEPARTMENT OF TRANSPORTATION GRADE CROSSING SIGNAL SYSTEM SAFETY... of insulated wire; splice in underground wire. Insulated wire shall be protected from mechanical...

  8. Detection of a buried wire with two resistively loaded wire antennas

    NARCIS (Netherlands)

    Vossen, S.H.J.A.; Tijhuis, A.G.; Lepelaars, E.S.A.M.; Zwamborn, A.P.M.

    2002-01-01

    The use of two identical straight thin-wire antennas for the detection of a buried wire is analyzed with the aid of numerical calculations. The buried wire is located below an interface between two homogeneous half-spaces. The detection setup, which is formed by a transmitting and a receiving wire,

  9. One century of Kirschner wires and Kirschner wire insertion techniques : A historical review

    NARCIS (Netherlands)

    Franssen, Bas B. G. M.; Schuurman, Arnold H.; Van der Molen, Aebele Mink; Kon, Moshe

    A century ago, in 1909, Martin Kirschner (1879-942) introduced a smooth pin, presently known as the Kirschner wire (K-wire). The K-wire was initiallly used for skeletal traction and is now currently used for many different goals. The development of the K-wire and its insertion devices were mainly

  10. FPGA based fast synchronous serial multi-wire links synchronization

    Science.gov (United States)

    Pozniak, Krzysztof T.

    2013-10-01

    The paper debates synchronization method of multi-wire, serial link of constant latency, by means of pseudo-random numbers generators. The solution was designed for various families of FPGA circuits. There were debated synchronization algorithm and functional structure of parameterized transmitter and receiver modules. The modules were realized in VHDL language in a behavioral form.

  11. Correlated electron phenomena in ultra-low disorder quantum wires

    International Nuclear Information System (INIS)

    Reilly, D.J.; Facer, G.R.; Dzurak, A.S.; Kane, B.E.; Clark, R.G.; Lumpkin, N.E.

    1999-01-01

    Full text: Quantum point contacts in the lowest disorder HEMTs display structure at 0.7 x 2e 2 /h, which cannot be interpreted within a single particle Landauer model. This structure has been attributed to a spontaneous spin polarisation at zero B field. We have developed novel GaAs/AlGaAs enhancement mode FETs, which avoid the random impurity potential present in conventional MODFET devices by using epitaxially grown gates to produce ultra-low-disorder QPCs and quantum wires using electron beam lithography. The ballistic mean free path within these devices exceeds 160 μm 2 . Quantum wires of 5 μm in length show up to 15 conductance plateaux, indicating that these may be the lowest-disorder quantum wires fabricated using conventional surface patterning techniques. These structures are ideal for the study of correlation effects in QPCs and quantum wires as a function of electron density. Our data provides strong evidence that correlation effects are enhanced as the length of the 1D region is increased and also that additional structure moves close to 0.5 x 2e 2 /h, the value expected for an ideal spin-split 1D level

  12. Raman study of InAs/InP quantum wires

    Science.gov (United States)

    Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

    2007-04-01

    We present a Raman study of the vibrational modes in InAs/InP (001) quantum wires. The energy of the observed phonon modes evidences the confinement properties of the wires, their strain anisotropy and the effect of atomic intermixing. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the E1 critical point. The observed vibrations and their variation with sample characteristics are in agreement with the conclusions of previous structural and optical characterization performed in the same samples.

  13. Social Reproduction and Political Change in The Wire

    DEFF Research Database (Denmark)

    Jensen, Mikkel Bo Brendstrup

    2017-01-01

    This paper examines a core tension in the political television serial The Wire (2002-2008). While several critics have argued that this show is both “bleak” and “systemic” in its portrayal of contemporary society, this paper argues that it is useful to understand these textual elements as building...... blocks in The Wire’s attempt to create a coherent and consistent political argument. The paper argues that had The Wire been structured as a more uplifting and redeeming story, the systemic nature of its societal criticism would be undercut and the show would not embrace the logical consequence...

  14. Computation of radiation from wire antennas on conducting bodies

    DEFF Research Database (Denmark)

    Albertsen, N. Christian; Hansen, Jesper; Jensen, Niels E.

    1974-01-01

    A theoretical formulation, in terms of combined magnetic and electric field integral equations, is presented for the class of electromagnetic problems in which one or more wire antennas are connected to a conducting body of arbitrary shape. The formulation is suitable for numerical computation...... provided that the overall dimensions of the structure are not large compared to the wavelength. A computer program is described, and test runs on various configurations involving a cylindrical body with one or more straight wires are presented. The results obtained agree well with experimental data....

  15. Galvanic coupling of steel and gold alloy lingual brackets with orthodontic wires.

    Science.gov (United States)

    Polychronis, Georgios; Al Jabbari, Youssef S; Eliades, Theodore; Zinelis, Spiros

    2018-03-06

    The aim of this research was to assess galvanic behavior of lingual orthodontic brackets coupled with representative types of orthodontic wires. Three types of lingual brackets: Incognito (INC), In-Ovation L (IOV), and STb (STB) were combined with a stainless steel (SS) and a nickel-titanium (NiTi) orthodontic archwire. All materials were initially investigated by scanning electron microscopy / x-ray energy dispersive spectroscopy (SEM/EDX) while wires were also tested by x-ray diffraction spectroscopy (XRD). All bracket-wire combinations were immersed in acidic 0.1M NaCl 0.1M lactic acid and neutral NaF 0.3% (wt) electrolyte, and the potential differences were continuously recorded for 48 hours. The SEM/EDX analysis revealed that INC is a single-unit bracket made of a high gold (Au) alloy while IOV and STB are two-piece appliances in which the base and wing are made of SS alloys. The SS wire demonstrated austenite and martensite iron phase, while NiTi wire illustrated an intense austenite crystallographic structure with limited martensite. All bracket wire combinations showed potential differences below the threshold of galvanic corrosion (200 mV) except for INC and STB coupled with NiTi wire in NaF media. The electrochemical results indicate that all brackets tested demonstrated galvanic compatibility with SS wire, but fluoride treatment should be used cautiously with NiTi wires coupled with Au and SS brackets.

  16. Pre-wired systems prove their worth.

    Science.gov (United States)

    2012-03-01

    The 'new generation' of modular wiring systems from Apex Wiring Solutions have been specified for two of the world's foremost teaching hospitals - the Royal London and St Bartholomew's Hospital, as part of a pounds sterling 1 billion redevelopment project, to cut electrical installation times, reduce on-site waste, and provide a pre-wired, factory-tested, power and lighting system. HEJ reports.

  17. 49 CFR 393.28 - Wiring systems.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Wiring systems. 393.28 Section 393.28 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL MOTOR CARRIER SAFETY... NECESSARY FOR SAFE OPERATION Lamps, Reflective Devices, and Electrical Wiring § 393.28 Wiring systems...

  18. Getting "Wired" for McLuhan's Cyberculture.

    Science.gov (United States)

    McMurdo, George

    1995-01-01

    Examines the introduction of the computing magazine, "Wired", into the United Kingdom's (UK) market. Presents conversations with the founder and editorial staff of the UK edition, and discusses the accessibility of "Wired" via the World Wide Web. Describes 10 articles from United States "Wired" back-issues and…

  19. Development of high voltage lead wires using electron beam irradiation

    International Nuclear Information System (INIS)

    Bae Hunjai; Sohn Hosoung; Choi Dongjung

    1995-01-01

    It is known to those skilled to the art that the electric wires used in high voltage operating electric equipments such as TV sets, microwave ovens, duplicators and etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through property and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

  20. Development of high voltage lead wires using electron beam irradiation

    International Nuclear Information System (INIS)

    Bae Hunjai; Sohn Hosoung; Choi Dongjung

    1995-01-01

    It is known to those skilled to the art that the electric wires used in high voltage operating electric equipment such as TV sets, microwave ovens, duplicators etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

  1. Computational studies of a cut-wire pair and combined metamaterials

    International Nuclear Information System (INIS)

    Nguyen, Thanh Tung; Lievens, Peter; Lee, Young Pak; Vu, Dinh Lam

    2011-01-01

    The transfer-matrix method and finite-integration simulations show how the transmission properties of combined metamaterials, which consist of metallic cut-wire pairs and continuous wires, are affected by geometric parameters. The corresponding effective permittivity and permeability are retrieved from the complex scattering parameters using the standard retrieval procedure. The electromagnetic properties of the cut-wire pair as well as the left-handed behavior of the combined structure are understood by the effective medium theory. In addition, the dimensional dependence of transmission properties, the shapes of cut-wire pairs and continuous wire, and the impact of dielectric spacer are both examined. Finally, by expanding the results of previous research (Koschny et al 2003 Phys. Rev. Lett. 93 016608), we generalize the transmission picture of combined structures in terms of the correlation between electric and magnetic responses. (review)

  2. Thermite welding of Cu-Nb microcomposite wires

    Energy Technology Data Exchange (ETDEWEB)

    Visniakov, Nikolaj; Mikalauskas, Gediminas; Lukauskaite, Raimonda; Cernasejus, Olegas; Rudzinskas, Vitalijus [Vilnius Gediminas Technical Univ. (Lithuania). Faculty of Mechanics; Skamat, Jelena; Boris, Renata [Vilnius Gediminas Technical Univ. (Lithuania). Inst. of Thermal Insulation

    2017-10-15

    Thermite welding of Cu-Nb microcomposite wires was investigated. Suitable compositions of thermite material and slag were determined from the equation of the exothermic combustion synthesis reaction. The phase compositions of the thermite mixture and slag determined by X-ray diffraction analysis correspond to those assessed from the equation. According to non-destructive radiographic testing, the joint structure does not have welding defects. Microstructural examination of the joint cross-section with scanning electron microscopy showed that the Cu-Nb wire retained its shape and microstructure and only a thin surface layer of wire was melted during welding. The difference in electrical resistances of the conductor and welded joint was below 20 %. The thermite joint can withstand a maximum load equal to 62.5 % of the load-bearing capacity of microcomposite conductor.

  3. Critical surface phase of α2(2 × 4) reconstructed zig-zag chains on InAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xiang [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Zhou, Xun [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); School of Physics and Electronics Science, Guizhou Normal University, Guizhou, Guiyang 550001 (China); Wang, Ji-Hong [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Luo, Zi-Jiang [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); School of Education Administration, Guizhou University of Finance and Economics, Guizhou, Guiyang 550004 (China); Zhou, Qing; Liu, Ke; Hu, Ming-Zhe [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Ding, Zhao, E-mail: zding@gzu.edu.cn [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China)

    2014-07-01

    The critical condition for InAs(001) surface phase transition has been studied, the surface phase transition of InAs(001) showed discontinuity with hysteresis cycle as a function of substrate temperature. A mixed reconstruction surface and zig-zag chain α2(2 × 4) reconstruction surface have been observed by scanning tunneling microscopy. Considering the interaction and dynamics of surface arsenic atoms, the zig-zag chains of α2(2 × 4) reconstruction were found to be actually caused by the selective adsorption and desorption of surface arsenic dimers, they played a critical role in the surface phase transition between (2 × 4) and (4 × 2). - Highlights: • Discontinuous surface phase transition phenomena on the flat InAs(001) surface • Nanoscale InAs(001) surface observed by scanning tunneling microscopy • “Zig-Zag” chains of α2(2 × 4) reconstruction • Critical role in the surface phase transition between (2 × 4) and (4 × 2)

  4. Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

    NARCIS (Netherlands)

    Zhan, H.H.; Nötzel, R.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2003-01-01

    Self-assembled InAs quantum dots are grown at low temperature (LT) by molecular beam epitaxy (MBE) on GaAs substrates. The growth is in situ monitored by reflection high-energy electron diffraction, and ex situ evaluated by atomic force microscopy for the morphological properties, and by

  5. Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

    DEFF Research Database (Denmark)

    Saldaña, J. C. Estrada; Žitko, R.; Cleuziou, J. P.

    2018-01-01

    We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe...

  6. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    Bull, D.J.

    1977-01-01

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

  7. 20 CFR 668.700 - What process must an INA grantee use to plan its employment and training services?

    Science.gov (United States)

    2010-04-01

    ... it uses to plan other activities and services. (b) However, in the process of preparing its Two Year... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What process must an INA grantee use to plan its employment and training services? 668.700 Section 668.700 Employees' Benefits EMPLOYMENT AND...

  8. Critical surface phase of α2(2 × 4) reconstructed zig-zag chains on InAs(001)

    International Nuclear Information System (INIS)

    Guo, Xiang; Zhou, Xun; Wang, Ji-Hong; Luo, Zi-Jiang; Zhou, Qing; Liu, Ke; Hu, Ming-Zhe; Ding, Zhao

    2014-01-01

    The critical condition for InAs(001) surface phase transition has been studied, the surface phase transition of InAs(001) showed discontinuity with hysteresis cycle as a function of substrate temperature. A mixed reconstruction surface and zig-zag chain α2(2 × 4) reconstruction surface have been observed by scanning tunneling microscopy. Considering the interaction and dynamics of surface arsenic atoms, the zig-zag chains of α2(2 × 4) reconstruction were found to be actually caused by the selective adsorption and desorption of surface arsenic dimers, they played a critical role in the surface phase transition between (2 × 4) and (4 × 2). - Highlights: • Discontinuous surface phase transition phenomena on the flat InAs(001) surface • Nanoscale InAs(001) surface observed by scanning tunneling microscopy • “Zig-Zag” chains of α2(2 × 4) reconstruction • Critical role in the surface phase transition between (2 × 4) and (4 × 2)

  9. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    KAUST Repository

    Rota, Michele B.; Ameruddin, Amira S.; Wong-Leung, Jennifer; Belabbes, Abderrezak; Gao, Qiang; Miriametro, Antonio; Mura, Francesco; Tan, Hark Hoe; Polimeni, Antonio; Bechstedt, Friedhelm; Jagadish, Chennupati; Capizzi, Mario

    2017-01-01

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ

  10. Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

    NARCIS (Netherlands)

    Bruls, D.M.; Vugs, J.W.A.M.; Koenraad, P.M.; Skolnick, M.S.; Hopkinson, M.; Wolter, J.H.; Miura, N.; Ando, T.

    2001-01-01

    We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained

  11. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    NARCIS (Netherlands)

    Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

  12. Clinical bending of nickel titanium wires

    Directory of Open Access Journals (Sweden)

    Stephen Chain

    2015-01-01

    Full Text Available Since the evolution and the involvement of Nickel Titanium wires in the field of Orthodontics. The treatment plan has evolved with the use of low force Nickel Titanium wires. Because of their high springback, low stiffness, they are the key initial wires in leveling and alignment but have poor formability. Since poor formability limits its ability to create variable arch forms thus; limits the form of treatment. We have devised a method to bend the Nickel Titanium wires to help in our inventory but also customized the wire according to the treatment.

  13. Energy Deposition in a Septum Wire

    CERN Document Server

    Ferioli, G; Knaus, P; Koopman, J; CERN. Geneva. SPS and LHC Division

    2001-01-01

    The present note describes a machine development (MD) aimed to confirm experimentally the need for protection of the extraction wire septum ZS in SPS long straight section LSS6 during LHC operation. Single wires identical to the ones mounted on the extraction septum were fixed on a fast wire scanner and put into the beam path. The beam heated the wire until it broke after a measured number of turns. The maximum single shot intensity the septum wires could withstand was thus calculated and compared with simulation results.

  14. Influence of particle size of Mg powder on the microstructure and critical currents of in situ powder-in-tube processed MgB_2 wires

    International Nuclear Information System (INIS)

    Kumakura, Hiroaki; Ye, Shujun; Matsumoto, Akiyoshi; Nitta, Ryuji

    2016-01-01

    We fabricated in situ powder-in-tube(PIT) MgB_2 wires using three kinds of Mg powders with particle size of ∼45 μm, ∼150 μm and 212∼600 μm. Mg particles were elongated to filamentary structure in the wires during cold drawing process. Especially, long Mg filamentary structure was obtained for large Mg particle size of 212∼600 μm. Critical current density, J_c, increased with increasing Mg particle size for 1 mm diameter wires. This is due to the development of filamentary structure of high density MgB_2 superconducting layer along the wires. This MgB_2 structure is similar to that of the internal Mg diffusion (IMD) processed MgB_2 wires. However, J_c of the wires fabricated with 212∼600 μm Mg particle size decreased and the scattering of J_c increased with decreasing wire diameter, while the J_c of the wires with ∼45 μm Mg particle was almost independent of the wire diameter. The cross sectional area reduction of the Mg particles during the wire drawing is smaller than that of the wire. When using large size Mg particle, the number of Mg filaments in the wire cross section is small. These two facts statistically lead to the larger scattering of Mg areal fraction in the wire cross section with proceeding of wire drawing process, resulting in smaller volume fraction of MgB_2 in the wire and lower J_c with larger scattering along the wire. SiC nano powder addition is effective in increasing J_c for all Mg particle sizes. (author)

  15. Reversible flexible structural changes in multidimensional MOFs by guest molecules (I{sub 2}, NH{sub 3}) and thermal stimulation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yang; Li, Libo; Yang, Jiangfeng; Wang, Shuang; Li, Jinping, E-mail: Jpli211@hotmail.com

    2015-03-15

    Three metal–organic frameworks (MOFs), [Cu(INA){sub 2}], [Cu(INA){sub 2}I{sub 2}] and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}], were synthesized with 3D, 2D, and 0D structures, respectively. Reversible flexible structural changes of these MOFs were reported. Through high temperature (60–100 °C) stimulation of I{sub 2} or ambient temperature stimulation of NH{sub 3}, [Cu(INA){sub 2}] (3D) converted to [Cu(INA){sub 2}I{sub 2}] (2D) and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}] (0D); as the temperature increased to 150 °C, the MOFs changed back to their original form. In this way, this 3D MOF has potential application in the capture of I{sub 2} and NH{sub 3} from polluted water and air. XRD, TGA, SEM, NH{sub 3}-TPD, and the measurement of gas adsorption were used to describe the changes in processes regarding the structure, morphology, and properties. - Graphical abstract: Through I{sub 2}, NH{sub 3} molecules and thermal stimulation, the three MOFs can achieve reversible flexible structural changes. Different methods were used to prove the flexible reversible changes. - Highlights: • [Cu(INA){sub 2}] can flexible transform to [Cu(INA){sub 2}I{sub 2}] and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}] by adsorbing I{sub 2} or NH{sub 3}. • The reversible flexible transformation related to material source, temperature and concentration. • Potential applications for the capture of I{sub 2} and NH{sub 3} from polluted water or air.

  16. Slice of LHC dipole wiring

    CERN Multimedia

    Dipole model slice made in 1994 by Ansaldo. The high magnetic fields needed for guiding particles around the Large Hadron Collider (LHC) ring are created by passing 12’500 amps of current through coils of superconducting wiring. At very low temperatures, superconductors have no electrical resistance and therefore no power loss. The LHC is the largest superconducting installation ever built. The magnetic field must also be extremely uniform. This means the current flowing in the coils has to be very precisely controlled. Indeed, nowhere before has such precision been achieved at such high currents. 50’000 tonnes of steel sheets are used to make the magnet yokes that keep the wiring firmly in place. The yokes constitute approximately 80% of the accelerator's weight and, placed side by side, stretch over 20 km!

  17. Modifications in straight wire treatment.

    Science.gov (United States)

    Cardona, Alvin

    2010-01-01

    Orthodontic treatments have been modified with each new generation of clinicians. Today the emphasis is on facial esthetics and healthy temporomandibular joints. With orthopedic treatment, we can develop dental arches to get the necessary space to align the teeth and we can reach adequate function and esthetics, all within relatively good stability. By combining two-phase treatment with low friction fixed orthodontics and super elastic wires we produce light but continuous forces and we can provide better treatment than before. These types of forces cause physiological and functional orthopedic orthodontic reactions. The purpose of this article is to demonstrate our fixed orthopedic and orthodontic approach called "Modified Straight Wire" or "Physiologic Arch Technique." This technique is very successful with our patients because it can exert slow and continuous forces with minimal patient cooperation.

  18. Vibrating wire for beam profile scanning

    Directory of Open Access Journals (Sweden)

    S. G. Arutunian

    1999-12-01

    Full Text Available A method that measures the transverse profile (emittance of the bunch by detecting radiation arising at the scattering of the bunch on scanning wire is widely used. In this work information about bunch scattering is obtained by measuring the oscillation frequency of the tightened scanning wire. In such a way, the system of radiation (or secondary particles extraction and measurement can be removed. The entire unit consists of a compact fork with tightened wire and a scanning system. Normal oscillation frequency of a wire depends on wire tension, its geometric parameters, and, in a second approximation, its elastic characteristics. Normal oscillations are generated by interaction of an alternating current through the wire with magnetic field of a permanent magnet. In this case, it is suggested that the magnetic field of the accelerator (field of dipole magnets or quadrupole magnets be used for excitation of oscillations. The dependence of oscillation frequency on beam scattering is determined by several factors, including changes of wire tension caused by transverse force of the beam and influence of beam self-field. Preliminary calculations show that the influence of wire heating will dominate. We have studied strain gauges on the basis of vibrating wire from various materials (tungsten, beryl bronze, and niobium zirconium alloys. A scheme of normal oscillation generation by alternating current in autogeneration circuit with automatic frequency adjustment was selected. A special method of wire fixation and elimination of transverse degrees of freedom allows us to achieve relative stability better than 10^{-5} during several days at a relative resolution of 10^{-6}. Experimental results and estimates of wire heating of existing scanners show that the wire heats up to a few hundred grades, which is enough for measurements. The usage of wire of micrometer thickness diminishes the problem of wire thermalization speed during the scanning of the bunch.

  19. Pin Wire Coating Trip Report

    International Nuclear Information System (INIS)

    Spellman, G P

    2004-01-01

    A meeting to discuss the current pin wire coating problems was held at the Reynolds plant in Los Angeles on 2MAR04. The attendance list for Reynolds personnel is attached. there was an initial presentation which gave a brief history and the current status of pin wire coating at Reynolds. There was a presentation by Lori Primus on the requirements and issues for the coating. There was a presentation by Jim Smith of LANL on the chemistry and to some extent process development done to date. There was a long session covering what steps should be taken in the short term and, to a lesser extent, the long term. The coating currently being used is a blend of two polymers, polyethersulfone and polyparabanic acid (PPA) and some TiO2 filler. This system was accepted and put into production when the pin wire coating was outsourced to another company in 1974. When that company no longer was interested, the wire coating was brought in-house to Reynolds. At that time polyparabanic acid was actually a commercial product available from Exxon under the trade name Tradlon. However, it appears that the material used at Reynolds was synthesized locally. Also, it appears that a single large batch was synthesized in that time period and used up to 1997 when the supply ran out. The reason for the inclusion of TiO2 is not known although it does act as a rheological thickener. However, a more controlled thickening can be obtained with materials such as fumed silica. This material would have less likelihood of causing point imperfections in the coatings. Also, the mixing technique being used for all stages of the process is a relatively low shear ball mill process and the author recommends a high shear process such as a three roll paint mill, at least for the final mixing. Since solvent is added to the powder at Reynolds, it may be that they need to have the paint mill there

  20. Flexible and weaveable capacitor wire based on a carbon nanocomposite fiber.

    Science.gov (United States)

    Ren, Jing; Bai, Wenyu; Guan, Guozhen; Zhang, Ye; Peng, Huisheng

    2013-11-06

    A flexible and weaveable electric double-layer capacitor wire is developed by twisting two aligned carbon nanotube/ordered mesoporous carbon composite fibers with remarkable mechanical and electronic properties as electrodes. This capacitor wire exhibits high specific capacitance and long life stability. Compared with the conventional planar structure, the capacitor wire is also lightweight and can be integrated into various textile structures that are particularly promising for portable and wearable electronic devices. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Preparation of InAs(0 0 1) surface for spin injection via a chemical route

    International Nuclear Information System (INIS)

    Singh, L J; Oliver, R A; Barber, Z H; Eustace, D A; McComb, D W; Clowes, S K; Gilbertson, A M; Magnus, F; Branford, W R; Cohen, L F; Buckle, L; Buckle, P D; Ashley, T

    2007-01-01

    A wet chemical surface treatment for InAs epilayers is investigated to remove the native semiconductor oxide prior to growth of a MgO tunnel barrier and Co ferromagnetic electrode by dc magnetron sputtering. Use of a HCl etch followed by (NH 4 ) 2 S as the pre-growth surface treatment resulted in pinhole-like features in the tunnel barrier, as observed by conducting atomic force microscopy, but this detrimental effect is avoided if the etch procedure is repeated twice. High resolution transmission electron microscopy revealed that the etched samples had uniform tunnel barriers and reducing the growth temperature of the barrier from 200 to 100 0 C significantly improved the abruptness of the semiconductor/barrier interface. Electrical characterization of barrier properties illustrated that all the etched samples showed parabolic differential conductance curves indicative of tunnelling behaviour at 300 K

  2. ISTRAŽIVANJE ZAGAĐENOSTI MESA, RADNIH POVRŠINA I PRIBORA BAKTERIJAMA RODA PROTEUS

    OpenAIRE

    Hadžiosmanović, Mirza; Živković, Josip; Trešćec, Aida

    1992-01-01

    Istraživan je stupanj zagađenja sirovina i radnih površina tijekom proizvodnje mesnih prerađevina bakterijama roda Proteus. Rezultati su pokazali da je meso peradi zagađeno vrstama roda Proteus u količini od 8,8%, svježe goveđe meso 7,8 % a polutrajne i obarene kobasice neposredno nakon proizvoodnje u količini od 2,8 %. Rezultati pretraga brisova s proizvodnih linija pokazuju da je pripadnika roda Proteus najviše u kobasičarnici (14,6 %), na liniji prerade svinja (11,8 %), goveda (10,9 %), a ...

  3. Surface roughness induced electron mobility degradation in InAs nanowires

    International Nuclear Information System (INIS)

    Wang Fengyun; Yip, Sen Po; Han, Ning; Fok, KitWa; Lin, Hao; Hou, Jared J; Dong, Guofa; Hung, Tak Fu; Chan, K S; Ho, Johnny C

    2013-01-01

    In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm 2 V −1 s −1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance. (paper)

  4. Mieloencefalite protozoária eqüina (Relato de caso.

    Directory of Open Access Journals (Sweden)

    R. C. Gonçalves

    2005-03-01

    Full Text Available RESUMO :O objetivo deste trabalho foi relatar um caso de mieloencefalite protozoária eqüina no Estado de São Paulo, Brasil. O diagnóstico se baseou nos sinais clínicos, no resultado positivo para anticorpos contra Sarcocystis neurona no soro e no líquor pela técnica de Western blot. Palavras chave: Mieloencefalite, Sarcocystis neurona, eqüinos. SUMMARY: The purpose of this work was to present a case of equine protozoal myeloencephalitis (EPM in the State of São Paulo, Brazil. The diagnosis was based on the clinical sings, the positive results of the serum and cerebrospinal fluid analysis (Western blot for antibodies against Sarcocystis neurona. Keywords: Myeloencephalitis, Sarcocystis neurona,

  5. Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Suparna; Aggarwal, R.; Kumari Gupta, Vandna; Ingale, Alka [Laser Physics Application Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, MP (India)

    2014-07-07

    We report the study of time evolution of chemical changes on the surface of an InAs nanowire (NW) on laser irradiation in different power density regime, using Raman spectroscopy for a time span of 8–16 min. Mixture of metastable oxides like InAsO{sub 4,} As{sub 2}O{sub 3} are formed upon oxidation, which are reflected as sharp Raman peaks at ∼240–254 and 180–200 cm{sup −1}. Evidence of removal of arsenic layer by layer is also observed at higher power density. Position controlled laser induced chemical modification on a nanometer scale, without changing the core of the NW, can be useful for NW based device fabrication.

  6. Isolation, Fractionation and Characterization of Catalase from Neurospora crassa (InaCC F226)

    Science.gov (United States)

    Suryani; Ambarsari, L.; Lindawati, E.

    2017-03-01

    Catalase from Indigenous isolate Neurospora crassa InaCC F226 has been isolated, fractionated and characterized. Production of catalase by Neurospora crassa was done by using PDA medium (Potato Dextrosa Agar) and fractionated with ammonium sulphate with 20-80% saturation. Fraction 60% was optimum saturation of ammonium sulphate and had highest specific activity 3339.82 U/mg with purity 6.09 times, total protein 0.920 mg and yield 88.57%. The optimum pH and temperature for catalase activity were at 40°C and pH 7.0, respectively. The metal ions that stimulated catalase activity acted were Ca2+, Mn2+ and Zn2+, and inhibitors were EDTA, Mg2+ and Cu2+. Based on Km and Vmax values were 0.2384 mM and 13.3156 s/mM.

  7. Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption

    International Nuclear Information System (INIS)

    Kim, Jungsub; Yang, Changjae; Sim, Uk; Lee, Jaeyel; Yoon, Euijoon; Lee, Youngsoo

    2009-01-01

    We investigated the morphological and optical properties of InAs quantum dots (QDs) grown by using periodic arsine interruption (PAI) and compared them with QDs grown conventionally. In the conventional growth, the formation of large islands was observed, which suppresses the nucleation and growth of QDs. Furthermore, the growth of capping layers was significantly degraded by these large islands. On the other hand, in the PAI growth, the formation of large islands was completely suppressed, resulting in the increase of the density and aspect ratio of QDs and the uniform growth of capping layers. As a result of photoluminescence (PL) measurements, we found that the emission efficiency was enhanced and the full-width-half-maximum was reduced to 32 meV. The temperature dependence of these optical properties also revealed the enhancement of the uniformity of QDs grown by the PAI method.

  8. EDITORIAL More than a wire More than a wire

    Science.gov (United States)

    Demming, Anna

    2010-10-01

    Nanowires are the natural evolution of the connections in circuits when scaled down to nanometre sizes. On closer inspection, of course, the role of nanowires in developing new technologies is much more than just a current-bearing medium. By sizing the diameters of these objects down to the nanoscale, their properties become increasingly sensitive to factors such as the gas composition, temperature and incident light of their surrounding environment, as well as defects and variations in diameter. What becomes important in modern electronics innovations is not just what is connected, but how. Nanowires had already begun to attract the attention of researchers in the early 1990s as advances in imaging and measurement devices invited researchers to investigate the properties of these one-dimensional structures [1, 2]. This interest has sparked ingenious ways of fabricating nanowires such as the use of a DNA template. A collaboration of researchers at Louisiana Tech University in the US hs provided an overview of various methods to assemble conductive nanowires on a DNA template, including a summary of different approaches to stretching and positioning the templates [3]. Work in this area demonstrates a neat parallel for the role of DNA molecules as the building blocks of life and the foundations of nanoscale device architectures. Scientists at HP Labs in California are using nanowires to shrink the size of logic arrays [4]. One aspect of electronic interconnects that requires particular attention at nanoscale sizes is the effect of defects. The researchers at HP Labs demonstrate that their approach, which they name FPNI (field-programmable nanowire interconnect), is extremely tolerant of the high defect rates likely to be found in these nanoscale structures, and allows reduction in size and power without significantly sacrificing the clock rate. Another issue in scaling down electronics is the trend for an increasing resistivity with decreasing wire width. Researchers

  9. The effect of different annealing treatments on magneto-impedance in Finemet wires

    International Nuclear Information System (INIS)

    Hernando, B.; Olivera, J.; Alvarez, P.; Santos, J.D.; Sanchez, M.L.; Perez, M.J.; Sanchez, T.; Gorria, P.

    2006-01-01

    In this paper, we analyze the behaviour of Fe-rich wires that have been submitted to a current annealing, with and without an applied torsional stress. The structural relaxation and induced anisotropies achieved in the samples produce different effects in the magneto-impedance and torsion impedance response, in comparison with the as-quenched wire, due to the different domain structure and magnetization processes involved

  10. Energy transformation in Z-pinch and plasma focus discharges with wire and wire-in-liner loads

    International Nuclear Information System (INIS)

    Kubes, Pavel; Kravarik, Jozef; Klir, Daniel; Scholz, Marek; Paduch, Marian; Tomaszewski, Krzysztof; Karpinski, Leslaw; Bakshaev, Yury L.; Blinov, Peter I.; Chernenko, Andrey S.; Dan'ko, Sergey A.; Korolev, Valery D.; Shashkov, Andrey Y.; Tumanov, Victor I.

    2002-01-01

    The results of the study of the Z-pinch and plasma-focus plasmas at presence of the axial C, Al, or Cu wires of sufficient high diameter are discussed in this paper. The wire was positioned on the top of the inner electrode of the PF 1000 plasma focus (1.8 MA, IPPLM Warsaw), or at the axis with or without the tungsten or alumine wire array load at the S-300 facility (3 MA, RRC Kurchatov Institute, Moscow), and at the axis of the small Z-pinch Z-150 (50 kA, CTU Prague). The plasma corona around the wire was generated both by the current going through the wires and by the implosion of the wire array or of the current sheath. The experiments showed interesting results often observed in some shots of Z-pinch type discharges - existence of helical structures, two relatively long and stable pinch phases, oscillation of pinch diameter, and back return of the plasma exploding from the pinch. All these observed phenomena can be evolved by spontaneous self-generation and transformation of the axial magnetic field in the pinch during the plasma implosion and explosion. A configuration of axial and azimuthal magnetic field confines the plasma and later transforms or dissipates during a few tens or hundreds ns. A fast transformation of internal magnetic fields can induce a sufficiently high electric field for generation of keV particles and radiation. Study and usage of Z-pinch discharges is connected with solving of two principal problems, limitation of instability development and a way of generation of high energy particles and radiation. The first problem is partially solved by the faster increase of the current, by better cylindrical symmetry of the load and plasma, by higher density of the plasma or by the presence of a stronger magnetized plasma

  11. Influences of Corrosive Sulfur on Copper Wires and Oil-Paper Insulation in Transformers

    Directory of Open Access Journals (Sweden)

    Jian Li

    2011-10-01

    Full Text Available Oil-impregnated paper is widely used in power transmission equipment as a reliable insulation. However, copper sulphide deposition on oil-paper insulation can lead to insulation failures in power transformers. This paper presents the influences of copper sulfur corrosion and copper sulphide deposition on copper wires and oil-paper insulation in power transformers. Thermal aging tests of paper-wrapped copper wires and bare copper wires in insulating oil were carried out at 130 °C and 150 °C in laboratory. The corrosive characteristics of paper-wrapped copper wires and bare copper wires were analyzed. Dielectric properties of insulation paper and insulating oil were also analyzed at different stages of the thermal aging tests using a broadband dielectric spectrometer. Experiments and analysis results show that copper sulfide deposition on surfaces of copper wires and insulation paper changes the surface structures of copper wires and insulation paper. Copper sulfur corrosion changes the dielectric properties of oil-paper insulation, and the copper sulfide deposition greatly reduces the electrical breakdown strength of oil-paper insulation. Metal passivator is capable of preventing copper wires from sulfur corrosion. The experimental results are helpful for investigations for fault diagnosis of internal insulation in power transformers.

  12. Mechanical properties and aesthetics of FRP orthodontic wire fabricated by hot drawing.

    Science.gov (United States)

    Imai, T; Watari, F; Yamagata, S; Kobayashi, M; Nagayama, K; Toyoizumi, Y; Nakamura, S

    1998-12-01

    The FRP wires 0.5 mm in diameter with a multiple fiber structure were fabricated by drawing the fiber polymer complex at 250 degrees C for an esthetic, transparent orthodontic wire. Biocompatible CaO-P2O5-SiO2-Al2O3 (CPSA) glass fibers of 8-20 microm in diameter were oriented unidirectionally in the longitudinal direction in PMMA matrix. The mechanical properties were investigated by 3-point flexural test. The FRP wire showed sufficient strength and a very good elastic recovery after deformation. Young's modulus and the flexural load at deflection 1 mm were nearly independent of the fiber diameter and linearly increased with the fiber fraction. The dependence on fiber fraction obeys well the rule of mixture. This FRP wire could cover the range of strength corresponding to the conventional metal orthodontic wires from Ni-Ti used in the initial stage of orthodontic treatments to Co-Cr used in the final stage by changing the volume ratio of glass fibers with the same external diameter. The estheticity in external appearance was excellent. Thus the new FRP wire can satisfy both mechanical properties necessary for an orthodontic wire and enough estheticity, which was not possible for the conventional metal wire.

  13. Tensile stress dependence of the magnetostatic interaction between Fe-rich wires

    International Nuclear Information System (INIS)

    Gawronski, P.; Zhukov, A.; Blanco, J.M.; Gonzalez, J.; KuIakowski, K.

    2005-01-01

    We study the influence of the applied tensile stress on the magnetostatic interaction between two amorphous Fe-rich wires. The hysteresis loop is measured for: (i) conventional wires produced by in-rotation-water method, with diameter of 125μm (ii) cold-drawn wires with diameter of 50μm. The stress dependence of the interaction field is evaluated from the shape of the hysteresis loops, which show characteristic two-step behaviour. These steps mark the values of the switching field of the wires. For the conventional wires the tensile stress dependence of the interaction field can be explained as a result of the tensile stress dependence of the magnetization. For the cold-drawn wires, the interaction field shows a maximum with the applied stress. This behaviour is interpreted as a consequence of a local variation of the domain structure at the wire ends. It modifies the stray field, and-as a consequence-the switching field of the neighbouring wire

  14. Understanding Irreversible Degradation of Nb3Sn Wires with Fundamental Fracture Mechanics

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, Yuhu [PPPL; Calzolaio, Ciro [Univ of Geneva; Senatore, Carmine [Univ of Geneva

    2014-08-01

    Irreversible performance degradation of advanced Nb3Sn superconducting wires subjected to transverse or axial mechanical loading is a critical issue for the design of large-scale fusion and accelerator magnets such as ITER and LHC. Recent SULTAN tests indicate that most cable-in-conduit conductors for ITER coils made of Nb3Sn wires processed by various fabrication techniques show similar performance degradation under cyclic loading. The irreversible degradation due to filament fracture and local strain accumulation in Nb3Sn wires cannot be described by the existing strand scaling law. Fracture mechanic modeling combined with X-ray diffraction imaging of filament micro-crack formation inside the wires under mechanical loading may reveal exciting insights to the wire degradation mechanisms. We apply fundamental fracture mechanics with a singularity approach to study influence of wire filament microstructure of initial void size and distribution to local stress concentration and potential crack propagation. We report impact of the scale and density of the void structure on stress concentration in the composite wire materials for crack initiation. These initial defects result in an irreversible degradation of the critical current beyond certain applied stress. We also discuss options to minimize stress concentration in the design of the material microstructure for enhanced wire performance for future applications.

  15. Drug-eluting Ti wires with titania nanotube arrays for bone fixation and reduced bone infection

    Science.gov (United States)

    Gulati, Karan; Aw, Moom Sinn; Losic, Dusan

    2011-10-01

    Current bone fixation technology which uses stainless steel wires known as Kirschner wires for fracture fixing often causes infection and reduced skeletal load resulting in implant failure. Creating new wires with drug-eluting properties to locally deliver drugs is an appealing approach to address some of these problems. This study presents the use of titanium [Ti] wires with titania nanotube [TNT] arrays formed with a drug delivery capability to design alternative bone fixation tools for orthopaedic applications. A titania layer with an array of nanotube structures was synthesised on the surface of a Ti wire by electrochemical anodisation and loaded with antibiotic (gentamicin) used as a model of bone anti-bacterial drug. Successful fabrication of TNT structures with pore diameters of approximately 170 nm and length of 70 μm is demonstrated for the first time in the form of wires. The drug release characteristics of TNT-Ti wires were evaluated, showing a two-phase release, with a burst release (37%) and a slow release with zero-order kinetics over 11 days. These results confirmed our system's ability to be applied as a drug-eluting tool for orthopaedic applications. The established biocompatibility of TNT structures, closer modulus of elasticity to natural bones and possible inclusion of desired drugs, proteins or growth factors make this system a promising alternative to replace conventional bone implants to prevent bone infection and to be used for targeted treatment of bone cancer, osteomyelitis and other orthopaedic diseases.

  16. Plasma dynamics in aluminium wire array Z-pinch implosions

    International Nuclear Information System (INIS)

    Bland, S.N.

    2001-01-01

    The wire array Z-pinch is the world's most powerful laboratory X-ray source. An achieved power of ∼280TW has generated great interest in the use of these devices as a source of hohlraum heating for inertial confinement fusion experiments. However, the physics underlying how wire array Z-pinches implode is not well understood. This thesis presents the first detailed measurements of plasma dynamics in wire array experiments. The MAGPIE generator, with currents of up to 1.4MA, 150ns 10-90% rise-time, was used to implode arrays of 16mm diameter typically containing between 8 and 64 15μm aluminium wires. Diagnostics included: end and side-on laser probing with interferometry, schlieren and shadowgraphy channels; radial and axial streak photography; gated X-ray imaging; XUV and hard X-ray spectrometry; filtered XRDs and diamond PCDs; and a novel X-ray backlighting system to probe high density plasma. It was found that the plasma formed from the wires consisted of cold, dense cores, which ablated producing hot, low density coronal plasma. After an initial acceleration around the cores, coronal plasma streams flowed force-free towards the axis, with an instability wavelength determined by the core size. At ∼50% of the implosion time, the streams collided on axis forming a precursor plasma which appeared to be uniform, stable, and inertially confined. The existence of core-corona structure significantly affected implosion dynamics. For arrays with <64 wires, the wire cores remained in their original positions until ∼80% of the implosion time before accelerating rapidly. At 64 wires a transition in implosion trajectories to 0-D like occurred indicating a possible merger of current carrying plasma close to the cores - the cores themselves did not merge. During implosion, the cores initially developed uncorrelated instabilities that then transformed into a longer wavelength global mode of instability. The study of nested arrays (2 concentric arrays, one inside the other

  17. A Brief History of INA and ICOH SCNP: International Neurotoxicology Association and International Congress on Occupational Health Scientific Committee on Neurotoxicology and Psychophysiology

    Science.gov (United States)

    Two international scientific societies dedicated to research in neurotoxicology and neurobehavioral toxicology are the International Neurotoxicology Association (INA) and the International Congress on Occupational Health International Symposium on Neurobehavioral Methods and Effe...

  18. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  19. Self-Catalyzed CdTe Wires

    Directory of Open Access Journals (Sweden)

    Tom Baines

    2018-04-01

    Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

  20. Phosphorus in antique iron music wire.

    Science.gov (United States)

    Goodway, M

    1987-05-22

    Harpsichords and other wire-strung musical instruments were made with longer strings about the beginning of the 17th century. This change required stronger music wire. Although these changes coincided with the introduction of the first mass-produced steel (iron alloyed with carbon), carbon was not found in samples of antique iron harpsichord wire. The wire contained an amount of phosphorus sufficient to have impeded its conversion to steel, and may have been drawn from iron rejected for this purpose. The method used to select pig iron for wire drawing ensured the highest possible phosphorus content at a time when its presence in iron was unsuspected. Phosphorus as an alloying element has had the reputation for making steel brittle when worked cold. Nevertheless, in replicating the antique wire, it was found that lowcarbon iron that contained 0.16 percent phosphorus was easily drawn to appropriate gauges and strengths for restringing antique harpsichords.