WorldWideScience

Sample records for inas hemts tae-woo

  1. Improved modeling on the RF behavior of InAs/AlSb HEMTs

    Science.gov (United States)

    Guan, He; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen

    2015-12-01

    The leakage current and the impact ionization effect causes a drawback for the performance of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this paper, the conventional HEMT small-signal model was enhanced to characterize the RF behavior for InAs/AlSb HEMTs. The additional gate leakage current induced by the impact ionization was modeled by adding two resistances RGh1 and RGh2 shunting the Cgs-Ri and Cgd-Rj branches, respectively, and the ionized-drain current was characterized by an additional resistance Rmi parallel with the output resistance Rds, meanwhile the influence of the impact ionization on the transconductance was modeled by an additional current source gmi controlled by Vgs. The additional inductance, evaluated as a function of f(ω, R), was introduced to characterize the frequency dependency of impact ionization by using the impact ionization effective rate 1/τi and a new frequency response rate factor n, which guaranteed the enhanced model reliable for a wide frequency range. As a result, the enhanced model achieved good agreement with the measurements of the S-parameters and Y-parameters for a wide frequency range, moreover, the simulated results of the stability factor K, the cutoff frequency fT, the maximum frequency of oscillation fmax, and the unilateral Mason's gain U were estimated to approach the experimental results with a high degree.

  2. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

    Science.gov (United States)

    2015-03-01

    aluminum gallium nitride (AlGaN)/gallium nitride (GaN) and indium aluminum nitride (InAlN)/GaN HEMT structures. These samples were cooled to 13 °K...SUBJECT TERMS Photoluminescence (PL), Laser Spectrscopy, High Electron Mobility Transistor (HEMT), aluminum gallium nitride (AlGaN), gallium nitride ...GaN), indium aluminum nitride (InAlN) 15. NUMBER OF PAGES 16 16. PRICE CODE 17. SECURITY CLASSIFICATION OF REPORT UNCLASSIFIED 18

  3. Women Fellows of INAE | Women in Science | Initiatives | Indian ...

    Indian Academy of Sciences (India)

    Women Fellows of INAE. INAE - Indian National Academy of Engineering. Ms. Alpa Sheth Civil Engineering. Prof. Bharathi Bhat Electronics & Communication Engineering. Prof. Dipanwita Roy Chowdhury Computer Engineering and Information Technology. Prof. Kamala Krithivasan Computer Engineering and Information ...

  4. Simple intrinsic defects in InAs :

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  5. Identification of Ina proteins from Fusarium acuminatum

    Science.gov (United States)

    Scheel, Jan Frederik; Kunert, Anna Theresa; Pöschl, Ulrich; Fröhlich-Nowoisky, Janine

    2015-04-01

    Freezing of water above -36° C is based on ice nucleation activity (INA) mediated by ice nucleators (IN) which can be of various origins. Beside mineral IN, biological particles are a potentially important source of atmospheric IN. The best-known biological IN are common plant-associated bacteria. The IN activity of these bacteria is induced by a surface protein on the outer cell membrane, which is fully characterized. In contrast, much less is known about the nature of fungal IN. The fungal genus Fusarium is widely spread throughout the earth. It belongs to the Ascomycota and is one of the most severe fungal pathogens. It can affect a variety of organisms from plants to animals including humans. INA of Fusarium was already described about 30 years ago and INA of Fusarium as well as other fungal genera is assumed to be mediated by proteins or at least to contain a proteinaceous compound. Although many efforts were made the precise INA machinery of Fusarium and other fungal species including the proteins and their corresponding genes remain unidentified. In this study preparations from living fungal samples of F. acuminatum were fractionated by liquid chromatography and IN active fractions were identified by freezing assays. SDS-page and de novo sequencing by mass spectrometry were used to identify the primary structure of the protein. Preliminary results show that the INA protein of F. acuminatum is contained in the early size exclusion chromatography fractions indicating a high molecular size. Moreover we could identify a single protein band from IN active fractions at 130-145 kDa corresponding to sizes of IN proteins from bacterial species. To our knowledge this is for the first time an isolation of a single protein from in vivo samples, which can be assigned as IN active from Fusarium.

  6. Failure Mechanisms for III-Nitride HEMT Devices

    Science.gov (United States)

    2013-11-19

    structural defects present in the latter consisted of a nickel- aluminum -gallium oxide. Observations of ultrathin-barrier AlN/GaN HEMTs grown on... aluminum -gallium oxide. b) Characterization of ultrathin-barrier AlN/GaN HEMTs on freestanding GaN substrates (work in collaboration with D.F. Storm and...barrier AlN/GaN high electron mobility transistor structures which were grown by rf-plasma MBE on freestanding, Ga-polar, hydride vapor phase epitaxy

  7. Optical emission of InAs nanowires

    International Nuclear Information System (INIS)

    Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

    2012-01-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

  8. Optical emission of InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

    2012-09-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

  9. An accurate and simple large signal model of HEMT

    DEFF Research Database (Denmark)

    Liu, Qing

    1989-01-01

    A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid...

  10. Electrical characterization of InAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Botha, L.; Shamba, P.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2008-07-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10{sup 18} cm{sup -3}) to strongly p-doped (p{proportional_to}10{sup 19} cm{sup -3}) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Electrical characterization of InAs thin films

    International Nuclear Information System (INIS)

    Botha, L.; Shamba, P.; Botha, J.R.

    2008-01-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10 18 cm -3 ) to strongly p-doped (p∝10 19 cm -3 ) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Growth and electrical characterization of Zn-doped InAs and InAs1-xSbx

    International Nuclear Information System (INIS)

    Venter, A.; Shamba, P.; Botha, L.; Botha, J.R.

    2009-01-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs 1-x Sb x layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs 1-x Sb x epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  13. Unstable behaviour of normally-off GaN E-HEMT under short-circuit

    Science.gov (United States)

    Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

    2018-04-01

    The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

  14. Temperature Dependence of GaN HEMT Small Signal Parameters

    OpenAIRE

    Ali M. Darwish; Amr A. Ibrahim; H. Alfred Hung

    2011-01-01

    This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range. The changes with temperature for transconductance ( m ), output impedance ( d s and d s ), feedback capacitance ( d g ), input capacitance ( g s ), and gate resistance ( g ) are measured. The variations with temperature are established for m , d s , d s , d g , g s , and g in the GaN technology. This information is useful for MMIC designs....

  15. Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers

    Science.gov (United States)

    Zmuidzinas, J.

    2004-01-01

    This is the final technical report for NASA grant NAG5-9493. entitled "Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers". The goal of this project was to develop and demonstrate a new generation of superconducting tunnel junction (SIS) receivers with extremely wide instantaneous (intermediate-frequency, or IF) bandwidths. of order 12 GHz. along with the wideband low-noise microwave HEMT (high electron mobility transistor) amplifiers which follow the SIS mixer. These wideband SIS/HEMT receivers would allow rapid submillimeter wavelength spectral line surveys to be carried out, for instance with the NASA airborne observatory SOFIA. and could potentially be useful for future submillimeter space missions such as SAFIR. In addition, there are potential NASA earth science applications. such as the monitoring of the distribution of chemical species in the stratosphere and troposphere using the limb-sounding technique. The overall goals of this project have been achieved: a broadband 200-300 SIS receiver was designed and constructed, and was demonstrated in the field through a test run at the Caltech Submillimeter Observatory on Mauna Kea. HI. The technical details are described in the appendices. which are primarily conference publications. but Appendix A also includes an unpublished summary of the latest results. The work on the SIS mixer design are described in the conference publications (appendices B and C). The "Supermix" software package that was developed at Caltech and used for the SIS design is also described in two conference papers, but has been substantially revised, debugged. and extended as part of the work completed for this grant. The Supermix package is made available to the community at no charge. The electromagnetic design of a radial waveguide probe similar to the one used in this work is described in a journal publication. Details of the novel fabrication procedure used for producing the SIS devices at JPL are also given in an

  16. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

    2018-01-01

    In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices...... are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four-layer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained...

  17. Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

    Directory of Open Access Journals (Sweden)

    H. MOSBAHI

    2014-05-01

    Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

  18. High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs

    OpenAIRE

    Okuda, Takafumi; Hikihara, Takashi

    2017-01-01

    In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency gate driver from the logic level, and robustness of SiC MOSFET with high avalanche capability is suitable for a valve transistor in power converters. Our proposed gate driver consists of digital isolators, complementary Si MOSFETs, and GaN HEMTs. The GaN HEMT...

  19. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    International Nuclear Information System (INIS)

    Mao Wei; She Wei-Bo; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Hao Yue; Yang Cui

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. (paper)

  20. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    Science.gov (United States)

    Wei, Mao; Wei-Bo, She; Cui, Yang; Jin-Feng, Zhang; Xue-Feng, Zheng; Chong, Wang; Yue, Hao

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085, 61334002, 61306017, 61474091, 61574112, and 61574110).

  1. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    International Nuclear Information System (INIS)

    Witte, H; Warnke, C; Krost, A; Voigt, T; De Lima, A; Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K

    2011-01-01

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO x isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  2. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    Science.gov (United States)

    Witte, H.; Warnke, C.; Voigt, T.; de Lima, A.; Ivanov, I.; Vidakovic-Koch, T. R.; Sundmacher, K.; Krost, A.

    2011-09-01

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlOx isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  3. Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Yang, Yongheng; Iannuzzo, Francesco

    2016-01-01

    In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibil...

  4. Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

    Science.gov (United States)

    Orouji, Ali A.; Ghaffari, Majid

    2015-11-01

    In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

  5. Algan/Gan Hemt By Magnetron Sputtering System

    Science.gov (United States)

    Garcia Perez, Roman

    In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

  6. InAs based terahertz quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael; Schönhuber, Sebastian; Unterrainer, Karl [Photonics Institute and Center for Micro- and Nanostructures, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Vienna (Austria); Zederbauer, Tobias; Schrenk, Werner; Andrews, Aaron Maxwell; Strasser, Gottfried [Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universität Wien, Floragasse 7, 1040 Vienna (Austria); Detz, Hermann [Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Vienna (Austria)

    2016-01-04

    We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.

  7. Past and Present Development of INA's Liberalisation and Privatisation

    International Nuclear Information System (INIS)

    Lesic, A.; Stimac, B.

    2001-01-01

    The paper deals with the historical development aspects of the Croatian oil and gas industry INA. It describes the period from the very start of oil and gas production to the data of establishment of the Croatian state and afterwards. Some important milestones and political and economic events that impacted the development of the Croatian oil industry are described and commented, including changes toward liberalisation and privatisation of the oil and gas sector. The paper emphasises the role of INA in the Croatian economy and proposes some solutions for the liberalisation process and privatisation of the company that could prevent undesirable effects of privatisation and protect the interests of Croatia in the energy sector which is one of the main sectors of economy having influence on other production and service sectors and their competitiveness.(author)

  8. INA's Preparations for Liberalised Energy Market and Privatisation

    International Nuclear Information System (INIS)

    Dragicevic, T.; Kolundzic, S.

    2001-01-01

    Before opening of the market, energy entities must carry out numerous preparations in order to be ready for challenges of a competitive environment. Some preparations refer to legal and organisational issues, but many of them encompass reengineering of business processes, cost reduction schemes and various improvement measures aimed at maintenance or acquisition of a competitive advantage. INA is actively pursuing some of the above measures, but now, by the end of 2001, we also have to deal with preparations for privatisation. These two processes have some important common elements, competitiveness being certainly one of them. INA must work toward improving its competitive strength in the gas sector, in refining, in marketing of oil products, but also in various supporting activities. However, there are constraints that we have to observe, mainly related to social issues.(author)

  9. Study of interface state trap density on characteristics of MOS-HEMT

    Science.gov (United States)

    Tseng, Ming-Chun; Hung, Ming-Hsien; Wuu, Dong-Sing; Horng, Ray-Hua

    2015-03-01

    In this study, the effects of chemical treatment on the properties of MOS capacitors and metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) were studied. The structure consist of Al2O3/u-GaN/AlN buffer/ Si substrate and Al2O3 (10 nm)/u-AlGaN (25 nm)/u-GaN (2μm)/AlN buffer/Si substrate for MOS capacitor and MOS-HEMT device, respectively. There are four chemical treatment recipes, which consist of organic solvents, oxygen plasma, BCl3 plasma, dilute acidic solvent, hydrofluoric acid and RCA-like clean process to remove the metal ions, organic contamination and native oxide. Four different chemical treatment recipes treated the surface of u-GaN before Al2O3 was grown on the treated surface to reduce the interface state trap densities (Dit). The Dit value was calculated from measurement of C-V curve with 1M Hz frequency. The formation of interface state trap of u-GaN surface is modified by different chemical solution of varied chemical treatment recipe, which further influence the breakdown voltage (Vbk), on-resistance (Ron), threshold voltage (Vth) and drain current (Id) of MOS-HEMT. The Vth of MOS-HEMT with organic solvents clean treatment is -11.00V. The MOS-HEMT after BCl3 plasma and organic solvents clean treatment shows the lowest Vth of -9.55V. The electronic characteristics of MOS HEMT device with four different chemical treatment recipes were investigated in this article.

  10. The sensitivity research of multiparameter biosensors based on HEMT by the mathematic modeling method

    Science.gov (United States)

    Tikhomirov, V. G.; Gudkov, A. G.; Agasieva, S. V.; Gorlacheva, E. N.; Shashurin, V. D.; Zybin, A. A.; Evseenkov, A. S.; Parnes, Y. M.

    2017-11-01

    The numerical impact modeling of some external effects on the CVC of biosensors based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure surface in the gate region and to start the process of directed construction optimization of the biosensors based on AlGaN/GaN HEMT with the aim of improving their performance. The calculation of the drain current of the biosensor construction was carried out to confirm the reliability of the developed mathematical model and obtained results.

  11. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    Energy Technology Data Exchange (ETDEWEB)

    Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi [The University of Utah, Salt Lake City, Utah 84112 (United States); Encomendero-Risco, Jimy J.; Xing, Huili Grace [University of Notre Dame, Notre Dame, Indiana 46556 (United States); Cornell University, Ithaca, New York 14853 (United States)

    2016-08-08

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  12. 22 CFR 40.68 - Aliens subject to INA 222(g).

    Science.gov (United States)

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

  13. Komunikační mix Svatebního salonu INA

    OpenAIRE

    Rybníčková, Michala

    2015-01-01

    Rybníčková, M. Marketing mix for Wedding Boutique INA. Bachelor thesis, Brno: Mendel university in Brno, 2015 This Bechelor thesis focuses on the marketing mix for the company Wedding Boutique INA. Survey results are used to evaluate the effectiveness of marketing tools currently used by INA. Furthermore, the results are used to recommend improvements to the marketing mix. Thesis also includes calculation of costs and scheduling for the year 2015.

  14. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs /InAs1 -xSbx

    Science.gov (United States)

    Liu, Henan; Zhang, Yong; Steenbergen, Elizabeth H.; Liu, Shi; Lin, Zhiyuan; Zhang, Yong-Hang; Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch; Dupuis, Russell D.; Kim, Jin K.; Hawkins, Samuel D.; Klem, John F.

    2017-09-01

    The InAs /InAs1 -xSbx superlattice system distinctly differs from two well-studied superlattice systems GaAs /AlAs and InAs /GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs /InAs1 -xSbx system when compared to the other two systems. In this work, we report a polarized Raman study of the vibrational properties of the InAs /InAs1 -xSbx superlattices (SLs) as well as selected InAs1 -xSbx alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like "forbidden" LO mode is observed in two parallel-polarization configurations. The InAs1 -xSbx alloys lattice matched to the substrate (xSb˜0.09 ) grown by MBE are also found to exhibit the forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (xSb˜0.35 ) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs /InAs1 -xSbx and InAs /GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of the forbidden LO-like mode is a universal signature for SLs and bulk systems resulting from the mixing of phonon modes due to structural

  15. A new small-signal modeling and extraction method in AlGaN/GaN HEMTs

    Science.gov (United States)

    Lu, Jing; Wang, Yan; Ma, Long; Yu, Zhiping

    2008-01-01

    In this paper, a new 20-element small-signal equivalent circuit for GaN HEMTs is proposed and correspondingly, a direct extraction method is developed. Compared with the 16-element conventional GaAs-based HEMT small-signal model (SSM), two parasitic distributed inter-electrode extrinsic capacitances and two additional feedback intrinsic resistances are considered. The new modeling approach for GaN HEMTs is verified by comparing the simulated small-signal S-parameter with the measured data over wide frequency and bias ranges.

  16. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure ...

    Indian Academy of Sciences (India)

    In this study, a gallium nitride (GaN) high electron mobility transistor (HEMT) with recessed insulator and barrier is reported. In the proposed structure, insulator is recessed into the barrier at the drain side and barrier is recessed into the buffer layer at the source side. We study important device characteristics such as electric ...

  17. AlGaN/GaN-based HEMT on SiC substrate for microwave ...

    Indian Academy of Sciences (India)

    (HEMT) on SiC substrate is proposed and its DC as well as microwave characteristics are dis- cussed for Si3N4 and ... From DC characteristics, the saturation drain currents are measured to be 600 mA/mm and. 550 mA/mm for ..... figure 12 from a family of Mason's unilateral gain (MUG) curves for both passivated devices.

  18. Recessed insulator and barrier AlGaN/GaN HEMT

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 88; Issue 4. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure for improving DC and RF characteristics ... Keywords. AlGaN/GaN high electron mobility transistor; breakdown voltage; output power density; short channel effect; gate-drain capacitance ...

  19. Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

    International Nuclear Information System (INIS)

    Cheng, Stone; Chou, Po-Chien; Chieng, Wei-Hua; Chang, E.Y.

    2013-01-01

    This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. -- Highlights: ► An enhanced packaging structure designed for AlGaN/GaN HEMTs on an Si substrate. ► The V-groove copper base is designed on the device periphery surface heat conduction for enhancing Si substrate thermal dissipation. ► The proposed device shows a lower thermal resistance and upgrade in thermal conductivity capability. ► This work provides useful thermal IR imagery information to aid in designing high efficiency package for GaN HEMTs on Si

  20. Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2006-01-01

    In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance...

  1. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core...

  2. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    Energy Technology Data Exchange (ETDEWEB)

    Gurpinar, Emre [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Group; Iannuzzo, Francesco [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Yang, Yongheng [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Castellazzi, Alberto [Univ. of Nottingham (United Kingdom). Power Electronics, Machines and Control (PEMC); Blaabjerg, Frede [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology

    2017-11-23

    Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

  3. AlGaN/GaN-based HEMT on SiC substrate for microwave ...

    Indian Academy of Sciences (India)

    The AlGaN/GaN-based high electron mobility transistors (HEMTs) are attracting much research interest worldwide because of their high density of states (DOS), high elec- tron saturation drift velocity, large band gap, high breakdown voltage, high electric field. DOI: 10.1007/s12043-012-0290-9; ePublication: 20 June 2012.

  4. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  5. 20 CFR 668.340 - What are INA grantee allowable activities?

    Science.gov (United States)

    2010-04-01

    ... Customers § 668.340 What are INA grantee allowable activities? (a) The INA grantee may provide any services...; (3) Orientation to services available; (4) Initial assessment of skill levels, aptitudes, abilities... and skill competencies; (2) Adult mentoring; (3) Training opportunities; (4) Supportive services, as...

  6. 20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

    Science.gov (United States)

    2010-04-01

    ... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

  7. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

    2016-01-01

    on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle...

  8. One-dimensional quantum confinement effect modulated thermoelectric properties in InAs nanowires.

    Science.gov (United States)

    Tian, Yuan; Sakr, Mohammed R; Kinder, Jesse M; Liang, Dong; Macdonald, Michael J; Qiu, Richard L J; Gao, Hong-Jun; Gao, Xuan P A

    2012-12-12

    We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with a diameter around 20 nm is obtained over T = 40-300 K. At low temperatures (T energy level broadening as the limiting factor in smearing out the 1D confinement enhanced thermoelectric power factor.

  9. Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy

    Science.gov (United States)

    Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Richard, Olivier; Bender, Hugo; Mols, Yves; Vila, María; Rubio-Zuazo, Juan; Castro, Germán R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc

    2017-12-01

    The mechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs nanowire (NW) grown by selective area epitaxy (SAE) is studied. We demonstrate that the crystal structure in InAs NW grown by SAE can be controlled using basic growth parameters, and wurtzitelike InAs NWs are achieved. We link the polytypic InAs NWs SAE to the reconstruction of the growth front (111)B surface. Surface reconstruction study of InAs (111) substrate and the following homoepitaxy experiment suggest that (111) planar defect nucleation is related to the (1 × 1) reconstruction of InAs (111)B surface. In order to reveal it more clearly, a model is presented to correlate growth temperature and arsenic partial pressure with InAs NW crystal structure. This model considers the transition between (1 × 1) and (2 × 2) surface reconstructions in the frame of adatom atoms adsorption/desorption, and the polytypism is thus linked to reconstruction quantitatively. The experimental data fit well with the model, which highly suggests that surface reconstruction plays an important role in the polytypism phenomenon in InAs NWs SAE.

  10. Elastic properties and electron transport in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  11. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  12. Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

    Science.gov (United States)

    Nirmal, D.; Arivazhagan, L.; Fletcher, A. S. Augustine; Ajayan, J.; Prajoon, P.

    2018-01-01

    In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain current model is derived. This model is useful to correlate the impact of intrinsic capacitance and conductance on drain current collapse. The proposed device suppressed the current collapse phenomena by 10% compared with the conventional AlGaN/GaN HEMT. Moreover, the DC characteristics of the simulated device shows a drain current of 900 mA/mm, breakdown voltage of 291 V and transconductance of 175 mS/mm. Besides, the intrinsic capacitance and conductance parameters are extracted and its impact on drain current is analysed. Finally, the simulation results obtained were in compliance with the derived mathematical model of AlGaN/GaN HEMT.

  13. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Cordier, Y.; Lecotonnec, A.; Chenot, S. [CRHEA-CNRS, Valbonne (France); Baron, N. [CRHEA-CNRS, Valbonne (France); PICOGIGA International, Courtaboeuf (France); Nacer, F.; Goullet, A.; Besland, M.P. [Institut des Materiaux Jean Rouxel IMN, Universite de Nantes (France); Lhermite, H. [Institut d' Electronique et de Telecommunications de Rennes (IETR), Universite de Rennes 1 (France); El Kazzi, M.; Regreny, P.; Hollinger, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS, Ecully (France)

    2009-06-15

    In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiN{sub x} dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and current-voltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco

    2016-01-01

    In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main...... contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours...

  15. Surface Preparation of InAs (110 Using Atomic Hydrogen

    Directory of Open Access Journals (Sweden)

    T.D. Veal

    2002-06-01

    Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

  16. Drain current DLTS of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Mizutani, T.; Okino, T.; Kawada, K.; Ohno, Y.; Kishimoto, S.; Maezawa, K. [Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2003-11-01

    The transient behaviour of AlGaN/GaN HEMTs was studied by current DLTS. One electron trap and two hole-trap-like signals were observed. The electron trap had an activation energy of 0.61 eV, which was similar to the defect level in n-GaN obtained by capacitance DLTS. It has been pointed out that the hole-trap-like signals dit not originate from changes in hole trap population in the channel, but probably reflected the changes in the electron population in the surface states of the HEMT access regions. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Improved large-signal GaN HEMT model suitable for intermodulation distortion analysis

    Science.gov (United States)

    Liu, Lin-Sheng; Luo, Ji

    2011-12-01

    In this article, a complete empirical large-signal model of GaN high electron-mobility transistors (HEMTs) is presented. The developed nonlinear model employs differentiable trigonometric function continuously to describe the drain-source current characteristic and its higher order derivatives, making itself suitable for the simulation of intermodulation distortion (IMD) in microwave circuits. Besides, an improved charge-conservative gate charge model is proposed to accurately trace the nonlinear gate-source and gate-drain capacitances. The model validity is demonstrated for different 0.25-µm gate-length GaN HEMTs. The simulation results of small-signal S-parameters, radio frequency (RF) large-signal power performances and two-tone IMD products show an excellent agreement with the measured data.

  18. Mere zaštite pri eksploataciji mašina i opreme za aplikaciju pesticida

    OpenAIRE

    Dimitrovski, Zoran; Kukutanov, Risto; Gligorevic, Kosta; Oljaca, Mico

    2016-01-01

    Direktiva 2009/128/EC Evropskog parlamenta određuje okvir za sprovođenje Nacionalnog akcionog plana u svakoj državi, koji se odnosi na održljivoj upotrebi pesticida. Jedan deo directive dierktno uređuje upotrebu mašina i opreme za aplikaciju pesticida kao i njihovo pravilno i bezbedno korištenje. Imajuči u vidu da u Republici Makedoniji inspekcija i obuka farmera za pravilno i bezbedno korištenje ovih mašina nisu obavezne, javljaju se problemi oko održavanja mašina i trovanj...

  19. Physical model for GaN HEMT design optimization in high frequency switching applications

    OpenAIRE

    Cucak, Dejana; Vasic, Miroslav; García, Oscar; Bouvier, Yann; Oliver Ramírez, Jesús Angel; Alou Cervera, Pedro; Cobos Márquez, José Antonio; Wang, Ashu; Martin Horcajo, Sara; Romero Rojo, Fátima; Calle Gómez, Fernando

    2014-01-01

    In this paper, physical modeling of a GaN HEMT is proposed, with the objective of device design optimization for application in a high frequency DC/DC converter. From the point of view of a switching application, physical model for input, output and reverse capacitance as well as for channel resistance is very important, since the aforementioned parameters determine power losses in the circuit. The obtained physical model of the switching device can be used for simulation models such as PSpic...

  20. Characterisation and analytical modeling of GaN HEMT-based varactor diodes

    OpenAIRE

    Hamdoun , Abdelaziz; Roy , L.; Himdi , Mohamed; Lafond , Olivier

    2015-01-01

    International audience; Varactor diodes fabricated in 0.5 and 0.15 μm GaN HEMT (high-electron-mobility transistor) processes are modelled. The devices were characterised via DC and RF small-signal measurements up to 20 GHz, and fitted to a simple physical equivalent circuit. Approximate analytical expressions containing empirical coefficients are introduced for the voltage dependency of capacitance and series resistance. The analytical solutions agree remarkably well with the experimentally e...

  1. Self-Assembled InAs Nanowires as Optical Reflectors.

    Science.gov (United States)

    Floris, Francesco; Fornasari, Lucia; Marini, Andrea; Bellani, Vittorio; Banfi, Francesco; Roddaro, Stefano; Ercolani, Daniele; Rocci, Mirko; Beltram, Fabio; Cecchini, Marco; Sorba, Lucia; Rossella, Francesco

    2017-11-21

    Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

  2. Photoluminescence of chemically treated InAs (111)A

    Science.gov (United States)

    Eassa, N.; Coetsee, E.; Swart, H. C.; Venter, A.; Botha, J. R.

    2014-06-01

    Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/ (NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111). Band-to-band transitions have been observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and to sulphur (at 0.414 eV), have been detected after treatment.

  3. Direct Observation of Acoustic Oscillations in InAs Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mariager, Simon O.; Khakhulin, Dmitry; Lemke, Henrik T.; Kjær, Kasper S.; Guerin, Laurent; Nuccio, Laura; Sørensen, Claus B.; Nielsen, Martin M.; Feidenhans’l, Robert (Copenhagen); (ESRF)

    2010-09-02

    Time-resolved X-ray diffraction and optical reflectivity are used to directly measure three different acoustic oscillations of InAs nanowires. The oscillations are excited by a femtosecond laser pulse and evolve at three different time scales. We measure the absolute scale of the initial radial expansion of the fundamental breathing eigenmode and determine the frequency by transient optical reflectivity. For the extensional eigenmode we measure the oscillations of the average radial and axial lattice constants and determine the amplitude of oscillations and the average extension. Finally we observe a bending motion of the nanowires. The frequencies of the eigenmodes are in good agreements with predictions made by continuum elasticity theory and we find no difference in the speed of sound between the wurtzite nanowires and cubic bulk crystals, but the measured strain is influenced by the interaction between different modes. The wurtzite crystal structure of the nanowires however has an anisotropic thermal expansion.

  4. Optoelectronic properties of individually positioned InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Overbeck, Jan; Brenneis, Andreas; Treu, Julian; Hertenberger, Simon; Abstreiter, Gerhard; Koblmueller, Gregor; Holleitner, Alexander [Walter Schottky Institut and Physik-Department, TU Muenchen, 85748 Garching (Germany)

    2013-07-01

    Small bandgap semiconducting nanowires offer a promising approach to fabricating nanoscale light-sensitive devices like broadband solar cells or mid-infrared photodetectors. We discuss the optoelectronic properties of individually positioned InAs nanowires on p-Si(111) substrates. The substrates exhibit a top layer of SiO{sub 2} which is structured via e-beam lithography creating holes in the oxide with a diameter of ∝80 nm. The nanowires are then grown vertically on the patterned substrates by solid-source molecular beam epitaxy. To fabricate optoelectronic devices, the nanowires are subsequently contacted via a thin, semitransparent metal film evaporated on top of an insulating layer (BCB). The p-Si substrate forms the second contact of the optoelectronic two-terminal devices. We discuss spatially resolved photocurrent measurements which give insights into the interplay of optoelectronic dynamics in single nanowires and in the Si-substrates.

  5. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

    2014-10-15

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

  6. Numerical simulation of local doped barrier layer AlGaN/GaN HEMTs

    Science.gov (United States)

    Fu, Wenli; Xu, Yuehang; Yan, Bo; Zhang, Bin; Xu, Ruimin

    2013-08-01

    A GaN HEMT with local doped barrier layer is proposed in this paper. The DC and RF characteristics of the proposed GaN HEMT structure is analyzed by using 2D numerical simulation. The results show that the breakdown voltage is 23% larger than that of the entire doped barrier layer structure due to the extension of depletion layer width between gate and drain electrodes, which reduces the electric field peak value at the right corner of the gate. A theoretical maximum output power density of 16.2 W/mm has been achieved, which is ∼34% larger than that of the entire doped barrier layer structure, and 7% larger than that of the unintentionally doped barrier layer structure. And the RF simulation results show that the proposed GaN HEMT also improved the maximum stable gain (MSG) by 0.8 dB up to 25 GHz due to the decrease of the gate-drain capacitance compared to the unintentionally doped and entire doped barrier layer structures.

  7. Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

    Science.gov (United States)

    Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

    2017-12-01

    This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

  8. Effects of combined gate and ohmic recess on GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Sunil Kumar

    2016-09-01

    Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

  9. A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

    Science.gov (United States)

    Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

    2017-11-01

    In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

  10. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  11. Defect reaction network in Si-doped InAs. Numerical predictions.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-05-01

    This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

  12. Electrical characterisation of Sn doped InAs grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2008-07-01

    The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10{sup 17} and 4.7 x 10{sup 19} cm{sup -3} with 77 K mobilities ranging from 12 000 to 1300 cm{sup 2}/Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yao; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Xue Jun-Shuai; Ma Xiao-Hua; Wang Chong; Yang Lin-An; Zhang Jin-Feng; Kuang Xian-Wei; Yang Cui

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies. (rapid communication)

  14. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    Science.gov (United States)

    Mao, Wei; Yang, Cui; Hao, Yao; Zhang, Jin-Cheng; Liu, Hong-Xia; Bi, Zhi-Wei; Xu, Sheng-Rui; Xue, Jun-Shuai; Ma, Xiao-Hua; Wang, Chong; Yang, Lin-An; Zhang, Jin-Feng; Kuang, Xian-Wei

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al2O3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al2O3/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al2O3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al2O3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies.

  15. Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

    Science.gov (United States)

    Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-04-01

    Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si-based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and etching behaviors of InAs (100) in various acidic and basic solutions, such as HF, HCl, H2SO4, NaOH, KOH, and NH4OH, were investigated. In addition, the effect of pH on the oxidation and etching reactions taking place on the InAs surface was studied using solutions with a pH ranging from 1 to 13. It was observed that the oxidation of the InAs surface was hindered in acidic solutions, which was attributed to the dissolution of the oxidized surface layer. In particular, the treatment of the InAs surface using a strongly acidic solution with a pH of less than 3 produced an oxide-free surface due to the predominant etching of the InAs surface. The addition of H2O2 to the acidic solutions greatly increased the etching rate of the InAs surface, which suggests that the oxidation process is the rate-limiting step in the sequence of reactions that occur during the etching of the InAs surface in acidic solutions. The etching of InAs was suppressed in neutral solutions, which resulted in the formation of a relatively thicker oxide layer on the surface, and mild etching of the InAs surface took place in basic solutions. However, in basic solutions, the addition of H2O2 did not significantly contribute to the increase of the oxidation state of the InAs surface; thus, its effect on the etching rate of InAs was smaller than in acidic solutions.

  16. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

    CSIR Research Space (South Africa)

    Baisitse, TR

    2006-07-01

    Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

  17. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  18. Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

    OpenAIRE

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Hung, Ting-Hsiang; Rajan, Siddharth

    2015-01-01

    A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electr...

  19. Driving of a GaN enhancement mode HEMT transistor with zener diode protection for high efficiency and low EMI

    OpenAIRE

    Spro, Ole Christian; Basu, Supratim; Abuishmais, Ibrahim Abed; Midtgård, Ole-Morten; Undeland, Tore Marvin

    2017-01-01

    The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. This paper investigates the effect of changing gate resistances and including a Zener diode for overvoltage protection in the gate circuit. The goal is to achieve low switching losses and low EMC signature. Due to the very low gate capacitance of the GaN HEMT compared to the j...

  20. Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT

    Science.gov (United States)

    Wang, Chong; Zhao, Meng-Di; He, Yun-Long; Zheng, Xue-Feng; Zhang, Kun; Wei, Xiao-Xiao; Mao, Wei; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-10-01

    AZO-gated and Ni/Au-gated AlGaN/GaN HEMTs are fabricated successfully, and an excellent transparency of AZO-gated electrode is achieved. After a negative gate bias stress acts on two kinds of the devices, their photoresponse characteristics are investigated by using laser sources with different wavelengths. The effect of photoresponse on AZO-gated electrode device is more obvious than on Ni/Au-gated electrodes device. The electrons are trapped in the AlGaN barrier of AZO-gated HEMT after it has experienced negative gate bias stress, and then the electrons can be excited effectively after it has been illuminated by the light with certain wavelengths. Furthermore, the trap state density D T and the time constant τ T of the AZO-gated Schottky contact are extracted by fitting the measured parallel conductance in a frequency range from 10 kHz to 10 MHz. The constants of the trap range from about 0.35 μs to 20.35 μs, and the trap state density increased from 1.93 × 1013 eV-1·cm-2 at an energy of 0.33 eV to 3.07 × 1011 eV-1·cm-2 at an energy of 0.40 eV. Moreover, the capacitance and conductance measurements are used to characterize the trapping effects under different illumination conditions in AZO-gated HEMTs. Reduced deep trap states' density is confirmed under the illumination of short wavelength light. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574110, 61574112, and 61106106).

  1. Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Wang Chong; Zhao Meng-Di; He Yun-Long; Zheng Xue-Feng; Zhang Kun; Wei Xiao-Xiao; Mao Wei; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2016-01-01

    AZO-gated and Ni/Au-gated AlGaN/GaN HEMTs are fabricated successfully, and an excellent transparency of AZO-gated electrode is achieved. After a negative gate bias stress acts on two kinds of the devices, their photoresponse characteristics are investigated by using laser sources with different wavelengths. The effect of photoresponse on AZO-gated electrode device is more obvious than on Ni/Au-gated electrodes device. The electrons are trapped in the AlGaN barrier of AZO-gated HEMT after it has experienced negative gate bias stress, and then the electrons can be excited effectively after it has been illuminated by the light with certain wavelengths. Furthermore, the trap state density D T and the time constant τ T of the AZO-gated Schottky contact are extracted by fitting the measured parallel conductance in a frequency range from 10 kHz to 10 MHz. The constants of the trap range from about 0.35 μs to 20.35 μs, and the trap state density increased from 1.93 × 10 13 eV −1 ·cm −2 at an energy of 0.33 eV to 3.07 × 10 11 eV −1 ·cm −2 at an energy of 0.40 eV. Moreover, the capacitance and conductance measurements are used to characterize the trapping effects under different illumination conditions in AZO-gated HEMTs. Reduced deep trap states' density is confirmed under the illumination of short wavelength light. (paper)

  2. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.

    2012-07-28

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  3. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Pu Yan; Wang Liang; Yuan Tingting; Ouyang Sihua; Pang Lei; Liu Guoguo; Luo Weijun; Liu Xinyu

    2010-01-01

    The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model. (semiconductor devices)

  4. Reliability improvement in GaN HEMT power device using a field plate approach

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung

    2017-07-01

    This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.

  5. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Pu Yan; Wang Liang; Yuan Tingting; Ouyang Sihua; Pang Lei; Liu Guoguo; Luo Weijun; Liu Xinyu, E-mail: puyan_66721@hotmail.co [Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2010-10-15

    The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model. (semiconductor devices)

  6. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.

    Energy Technology Data Exchange (ETDEWEB)

    Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

    2005-12-01

    GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the

  7. SEMICONDUCTOR DEVICES Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

    Science.gov (United States)

    Yan, Pu; Liang, Wang; Tingting, Yuan; Sihua, Ouyang; Lei, Pang; Guoguo, Liu; Weijun, Luo; Xinyu, Liu

    2010-10-01

    The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate—source and gate—drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate—source and gate—drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

  8. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Boardman, D

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  9. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    International Nuclear Information System (INIS)

    Boardman, D.

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  10. Electronic and optical properties of graphene-like InAs: An ab initio study

    Science.gov (United States)

    Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

    2018-03-01

    The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

  11. Stopped depletion region extension in an AlGaN/GaN-HEMT: A new technique for improving high-frequency performance

    Science.gov (United States)

    Asad, Mohsen; Rahimian, Morteza

    2015-08-01

    We present a novel structure for AlGaN/GaN high electron mobility transistors. The structure consists of a multi-recess AlGaN barrier layer and recessed metal ring (RBRM-HEMT). The barrier thickness narrowing between the gate and the source/drain regions minimizes the depletion region extension, which leads to smaller gate-drain ( C GD ) and gate-source ( C GS ) capacitances. This technique shows a great improvement in high-frequency and high-power applications. In high-frequency operation, the cut-off frequency ( f T ) and the maximum oscillation frequency ( f max ) of the RBRM-HEMT are found to be 133 GHz and 216 GHz respectively, which is significantly higher than the 94 GHz and the 175 GHz obtained for the conventional GaN HEMT (C-HEMT). In addition, a more uniform and low-crowding electric field is obtained under the gate close to the drain side due to the recessed metal-ring structure. A 128% improvement in breakdown voltage ( V BR ) is achieved compared to the C-HEMT. Consequently, the maximum output power density ( P max ) is increased from 11.3 W/mm in the C-HEMT to 24.4 W/mm for the RBRM-HEMT.

  12. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    International Nuclear Information System (INIS)

    Mao Wei; Fan Ju-Sheng; Du Ming; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2016-01-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. (paper)

  13. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    Science.gov (United States)

    Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-12-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

  14. X-ray diffraction analysis of InAs nanowires

    International Nuclear Information System (INIS)

    Davydok, Anton

    2013-01-01

    Semiconductor nanowires have attracted great interest as building blocks for future electronic and optoelectronic devices. The variability of the growth process opens the opportunity to control and combine the various properties tailoring for specific application. It was shown that the electrical and optical characteristics of the nanowires are strongly connected with their structure. Despite intensive research in this field, the growth process is still not fully understood. In particular, extensive real structure investigations are required. Most of the reports dedicated on the structural researches are based on the results of scanning electron microscopy (SEM) or transmission electron microscopy (TEM). SEM provides an image of the surface with nanostructures and is mainly used to describe the morphology of the sample, but it does not bring information about the internal structure, phase composition and defect structure. At the same time, the internal structure can be examined by TEM down to atomic scale. TEM image of good quality are very expensive due to the efforts in sample preparation and in localisation of a single object. All these aspects make the statistical structural analysis difficult. In the present work, X-ray diffraction analysis has been applied for structural investigation of InAs nanowires grown by different techniques. Using various X-ray diffraction geometries, the nanowire systems were investigated in terms of the lattice parameters, phase composition, strains and displacement fields and stacking defects. In particular, realizing grazing incidence diffraction and controlling the penetration depth of X-ray beam, we characterized sample series grown by Au-assisted metal organic phase epitaxy on GaAs [111]B substrate with different growth time. According to the results of SEM and X-ray investigations, a model of the growth process has been proposed. A more detailed analysis was performed on InAs nanowires grown by molecular beam epitaxy (MBE) on

  15. Analysis of the thermal behavior of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Russo, Salvatore; D’Alessandro, Vincenzo; Costagliola, Maurizio; Sasso, Grazia; Rinaldi, Niccolò

    2012-01-01

    Highlights: ► The thermal behavior of advanced multifinger AlGaN/GaN HEMTs grown on SiC is analyzed. ► The study is performed through accurate FEM simulations and DC/dynamic measurements. ► The FEM analysis is supported by an in-house tool devised for a smart mesh generation. ► Illustrative technology/layout guidelines to minimize the thermal issues are provided. - Abstract: The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM simulations – based on a novel in-house tool devised to automatically build the device mesh – are performed using a commercial software to explore the influence of various layout and technological solutions on the temperature field. An in-house routine is employed to determine the Foster/Cauer networks suited to describe the dynamic heat propagation through the device structure. To conclude, various experimental techniques are employed to assess the thermal resistance and to allow the monitoring of the thermal impedance versus time of the transistors under test.

  16. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  17. Progress in GaAs Metamorphic HEMT Technology for Microwave Applications. High Efficiency Ka-Band MHEMT Power MMICs

    Science.gov (United States)

    Smith, P. M.; Dugas, D.; Chu, K.; Nichols, K.; Duh, K. H.; Fisher, J.; MtPleasant, L.; Xu, D.; Gunter, L.; Vera, A.

    2003-01-01

    This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.

  18. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  19. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

    Science.gov (United States)

    Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

    2017-09-01

    In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

  20. Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

    International Nuclear Information System (INIS)

    Anyebe, E.A.; Zhuang, Q.; Lawson, S.; Robson, A.J.; Kolosov, O.; Sanchez, A.M.; Ponomarenko, L.; Zhukov, A.

    2014-01-01

    We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  2. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

    International Nuclear Information System (INIS)

    Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

    2014-01-01

    Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

  3. The Congress and the INA Trials, 1945-50: a Contest over the Perception of ‘Nationalist’ Politics

    NARCIS (Netherlands)

    Alpes, M.J.

    2007-01-01

    Whilst during the war the Indian National Army (hereafter INA) could be charged with having been the ‘puppet army’ of a fascist regime, the INA was brought firmly into the realms of anti-colonial and nationalist discourse after the war. Despite its earlier very distanced position, the Congress chose

  4. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  5. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  6. Spin effects in InAs self-assembled quantum dots

    Directory of Open Access Journals (Sweden)

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  7. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  8. Hall and thermoelectric evaluation of p-type InAs

    International Nuclear Information System (INIS)

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  9. Temperature dependent properties of InSb and InAs nanowire field-effect transistors

    Science.gov (United States)

    Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes; Lind, Erik; Karlström, Olov; Wernersson, Lars-Erik

    2010-04-01

    We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

  10. Intrinsic quantum dots in InAs nanowires

    International Nuclear Information System (INIS)

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  11. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

    Science.gov (United States)

    Kong, Xin; Wei, Ke; Liu, Guo-Guo; Liu, Xin-Yu

    2012-12-01

    In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications.

  12. Vertical Hole Transport and Carrier Localization in InAs /InAs1 -xSbx Type-II Superlattice Heterojunction Bipolar Transistors

    Science.gov (United States)

    Olson, B. V.; Klem, J. F.; Kadlec, E. A.; Kim, J. K.; Goldflam, M. D.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.; Flatté, M. E.

    2017-02-01

    Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-band-gap InAs /InAs1 -xSbx type-II superlattices (T2SLs). Vertical hole mobilities (μh) are reported and found to decrease rapidly from 360 cm2/V s at 120 K to approximately 2 cm2/V s at 30 K, providing evidence that holes are confined to localized states near the T2SL valence-miniband edge at low temperatures. Four distinct transport regimes are identified: (1) pure miniband transport, (2) miniband transport degraded by temporary capture of holes in localized states, (3) hopping transport between localized states in a mobility edge, and (4) hopping transport through defect states near the T2SL valence-miniband edge. Region (2) is found to have a thermal activation energy of ɛ2=36 meV corresponding to the energy range of a mobility edge. Region (3) is found to have a thermal activation energy of ɛ3=16 meV corresponding to the hopping transport activation energy. This description of vertical hole transport is analogous to electronic transport observed in disordered amorphous semiconductors displaying Anderson localization. For the T2SL, we postulate that localized states are created by disorder in the group-V alloy of the InAs1 -xSbx hole well causing fluctuations in the T2SL valence-band energy.

  13. Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.; Valinataj, Mojtaba

    2017-12-01

    In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electric field is suggested. The main idea of this work is to improve the Direct Current (DC) and Radio Frequency (RF) properties of device by modifying the depletion region in the channel. The proposed structure consists of a floating metal like a comb with triple tooth which is located in the space between the gate and drain and inside the buffer layer. We called the proposed structure as triple tooth HEMT (TT-HEMT). The RF and DC characteristics of the proposed structure are studied using numerical simulations. The breakdown voltage ( V BR ) increases to 169.5 V for the proposed structure in comparison with 103 V for the conventional HEMT (C-HEMT) due to the modified electric field distribution in the channel of the TT-HEMT structure. The maximum output power density ( P max ) of the TT-HEMT structure is 60.4% greater than that of the C-HEMT. The optimized results show that the maximum oscillation frequency ( f max ) and cut-off frequency (fT) of the proposed structure improve 111% and 26.5%, respectively compared to the C-HEMT structure. In addition, the maximum available gain (MAG) of the TT-HEMT structure is obtained 8.5 dB higher than that of the C-HEMT structure at the frequency of 40 GHz. The optimal results show that whatever the number of teeth on metal increases, the depletion region in the channel is modified more and the breakdown voltage increases, as well. Besides, the output power density ( P max ) is improved with the increasing number of teeth on metal (N). This characteristic is also true, for the cut-off frequency ( f T ), the maximum oscillation frequency ( f max ) and the maximum available gain (MAG) of the proposed structure. However, the drain current ( I D ) of the proposed structure is reduced.

  14. Low radiation level detection with room temperature InAs detector

    Science.gov (United States)

    Makai, Janos P.; Makai, Tamas

    2014-08-01

    Recently, room temperature or near room temperature InAs detectors are widely used in laser warning receivers, process control monitors, temperature sensors, etc. requiring linear operation over many decades of the sensitivity range. The linearity of zero biased Si, InGaAs and Ge detectors is thoroughly discussed in the literature, contrary to InAs detectors. In an earlier work of the authors it has been demonstrated that applying a bootstrap circuit to a Ge detector - depending on the frequency of the operation - will virtually increase the shunt resistance of the detector by 3-6 decades compared to the detector alone. In the present work, a similar circuitry was applied to a room temperature InAs detector, the differences between the bootstrapped Ge and bootstrapped InAs detector are underlined. It is shown, how the bootstrap circuit channels the photogenerated current to the feedback impedance decreasing with many decades the detectable low level limit of the detector - I/V converter unit. The linearity improvement results are discussed as a function of the chopping frequency, calculated and measured values are compared, the noise sources are analyzed and noise measurement results are presented.

  15. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.

    Science.gov (United States)

    Tomioka, Katsuhiro; Izhizaka, Fumiya; Fukui, Takashi

    2015-11-11

    III-V compound semiconductor and Ge are promising channel materials for future low-power and high-performance integrated circuits. A heterogeneous integration of these materials on the same platform, however, raises serious problem owing to a huge mismatch of carrier mobility. We proposed direct integration of perfectly vertically aligned InAs nanowires on Ge as a method for new alternative integrated circuits and demonstrated a high-performance InAs nanowire-vertical surrounding-gate transistor. Virtually 100% yield of vertically aligned InAs nanowires was achieved by controlling the initial surface of Ge and high-quality InAs nanowires were obtained regardless of lattice mismatch (6.7%). The transistor performance showed significantly higher conductivity with good gate control compared to Si-based conventional field-effect transistors: the drain current was 0.65 mA/μm, and the transconductance was 2.2 mS/μm at drain-source voltage of 0.50 V. These demonstrations are a first step for building alternative integrated circuits using vertical III-V/multigate planar Ge FETs.

  16. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  17. Towards quantitative three-dimensional characterisation of InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Kuznetsova, Nadezda

    2011-01-01

    InAs quantum dots (QDs) grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such QDs are highly dependent on their three-dimensional structural and chemical profiles...

  18. Atomic resolution imaging of in situ InAs nanowire dissolution at elevated temperature

    DEFF Research Database (Denmark)

    Pennington, Robert S.; Jinschek, Joerg; Wagner, Jakob Birkedal

    2010-01-01

    We present a preliminary study of the in situ heating of InAs nanowires in a gaseous environment in an environmental transmission electron microscope Nanowire dissolution, accompanied by dynamic reshaping of crystalline Au-containing catalyst particles at the ends of the wires, is observed...

  19. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

    DEFF Research Database (Denmark)

    Krizek, Filip; Kanne, Thomas; Razmadze, Davydas

    2017-01-01

    Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanis...

  20. Prediction of Disease Case Severity Level To Determine INA CBGs Rate

    Science.gov (United States)

    Puspitorini, Sukma; Kusumadewi, Sri; Rosita, Linda

    2017-03-01

    Indonesian Case-Based Groups (INA CBGs) is case-mix payment system using software grouper application. INA CBGs consisting of four digits code where the last digits indicating the severity level of disease cases. Severity level influence by secondary diagnosis (complications and co-morbidity) related to resource intensity level. It is medical resources used to treat a hospitalized patient. Objectives of this research is developing decision support system to predict severity level of disease cases and illustrate INA CBGs rate by using data mining decision tree classification model. Primary diagnosis (DU), first secondary diagnosis (DS 1), and second secondary diagnosis (DS 2) are attributes that used as input of severity level. The training process using C4.5 algorithm and the rules will represent in the IF-THEN form. Credibility of the system analyzed through testing process and confusion matrix present the results. Outcome of this research shows that first secondary diagnosis influence significant to form severity level predicting rules from new disease cases and INA CBGs rate illustration.

  1. Physical processes of current gain in InAs bipolar junction transistors

    Science.gov (United States)

    Wu, X.; Averett, K. L.; Maimon, S.; Koch, M. W.; Wicks, G. W.

    2004-01-01

    InAs bipolar junction transistors (BJTs), grown by molecular beam epitaxy, are reported with common emitter current gains ( β's) as large as 400. The factors affecting the common emitter current gain have been studied by estimating the magnitudes of the base transport factor ( αT) and emitter injection efficiency ( γ). This has been accomplished by studying a sequence of InAs BJTs with varying emitter doping densities, NE. Minority carrier diffusion length in the base ( LB), αT, and γ have been extracted from measured electrical characteristics. The results of the study of these InAs BJTs are as follows: L B≈0.4 μm, αT≈98% and γ ranges from 92% to nearly 100% depending on NE. This knowledge of the magnitudes of the injection efficiencies suggests when it would be useful to move from the simple BJT structure to the more advanced heterojunction bipolar transistor (HBT) structure. Lower γ BJTs would be improved, however high- γ BJTs would benefit little, by the use of the widegap emitters of HBTs. The method developed here to estimate γ, αT and LB is not specific to InAs BJTs, but should be useful for study of BJTs and HBTs in any material system.

  2. Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

    National Research Council Canada - National Science Library

    Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

    2005-01-01

    .... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

  3. Surface Reconstruction Phase Diagrams for InAs, AlSb, and GaSb

    National Research Council Canada - National Science Library

    Bracker, A. S; Yang, M. J; Bnnett, B. R; Culbertson, J. C; Moore, W. J

    2000-01-01

    ... for optimizing growth conditions. Phase boundaries for InAs (0 0 1) [(2*4)->(4*2)], AlSb (0 0 1) [c(4*4)->(1*3)], and GaSb (0 0 1) [(2*5)_>(1*3)] are presented as a function of substrate temperature and Group V-limited growth rate...

  4. Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies

    Science.gov (United States)

    Karisan, Yasir; Caglayan, Cosan; Sertel, Kubilay

    2018-02-01

    We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90-750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.

  5. Structural characterisation of GaAlN/GaN HEMT heterostructures

    International Nuclear Information System (INIS)

    Sarazin, N.; Durand, O.; Magis, M.; Di Forte Poisson, M.-A.; Di Persio, J.

    2006-01-01

    (GaN/GaAlN/GaN)//Al 2 O 3 (00.1) HEMT heterostructures have been studied by X-ray scattering techniques, transmission electron microscopy and atomic force microscopy. X-ray reflectometry has been used to determine with a high accuracy both the individual layer thicknesses and the interfacial roughness, in spite of the weak electronic density contrast between layers. From the Fourier inversion method and using a simulation software, the roughness of the interface corresponding to the two-dimensional electron gas location has been determined equal to 0.5 nm. Both high resolution X-ray diffraction and transmission electron microscopy experiments have shown the excellent crystallinity of the heterostructures. Finally, the surface morphology has been inferred using atomic force microscopy experiments

  6. The use of HEMTs in multiplexing large arrays of high impedance LTDs

    International Nuclear Information System (INIS)

    Yates, S.J.C.; Benoit, A.; Jin, Y.; Camus, Ph.; Cavanna, A.; Durand, T.; Etienne, B.; Gennser, U.; Gremion, E.; Hoffmann, C.; Leclercq, S.; Ulysse, Ch.

    2006-01-01

    The use of a multiplexing system in close proximity to the detectors simplifies the electronics associated with large arrays of Low Temperature Detectors (LTDs). Here, we report the demonstration of an array of Quantum-Point-Contact High-Electron-Mobility-Transistors (QPC-HEMTs) down to 100mK used to time multiplex the signal from 8 simulated high impedance LTDs (∼10MΩ) to an individual amplifier. Capacitors in parallel with the individual LTDs integrate the signal between measurements so giving a quasi-DC measurement of the LTDs. With the high impedance of the LTD this acts as a filter which counter acts the aliasing of the Johnson noise of the LTD associated with the time-multiplexing technique

  7. Analytical high frequency GaN HEMT model for noise simulations

    Science.gov (United States)

    Eshetu Muhea, Wondwosen; Mulugeta Yigletu, Fetene; Lazaro, Antonio; Iñiguez, Benjamin

    2017-12-01

    A compact high frequency model for AlGaN/GaN HEMT device valid for noise simulations is presented in this paper. The model is developed based on active transmission line approach and linear two port noise theory that makes it applicable for quasi static as well as non-quasi static device operation. The effects of channel length modulation and velocity saturation are discussed. Moreover, the effect of the gate leakage current on the noise performance of the device is investigated. It is shown that there is an apparent increase in noise generated in the device due to the gate current related shot noise. The common noise figures of merit for HFET are calculated and verified with experimental data.

  8. Small-signal model parameter extraction for AlGaN/GaN HEMT

    Science.gov (United States)

    Le, Yu; Yingkui, Zheng; Sheng, Zhang; Lei, Pang; Ke, Wei; Xiaohua, Ma

    2016-03-01

    A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor (HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions (G gsf and G gdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance.

  9. Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

    Science.gov (United States)

    Zhang, Kai; Cao, Meng-Yi; Lei, Xiao-Yi; Zhao, Sheng-Lei; Yang, Li-Yuan; Zheng, Xue-Feng; Ma, Xiao-Hua; Hao, Yue

    2013-09-01

    A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.

  10. Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

    International Nuclear Information System (INIS)

    Zhang Kai; Cao Meng-Yi; Lei Xiao-Yi; Zhao Sheng-Lei; Yang Li-Yuan; Zheng Xue-Feng; Ma Xiao-Hua; Hao Yue

    2013-01-01

    A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Small-signal model parameter extraction for AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Yu Le; Zhang Sheng; Ma Xiaohua; Zheng Yingkui; Pang Lei; Wei Ke

    2016-01-01

    A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor (HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions (G gsf and G gdf ) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance. (paper)

  12. Pathogenic and Ice-Nucleation Active (INA) Bacteria causing Dieback of Willows in Short Rotation Forestry

    Energy Technology Data Exchange (ETDEWEB)

    Nejad, Pajand

    2005-03-01

    To find out whether bacteria isolated from diseased plant parts can be the main causal agent for the dieback appearing in Salix energy forestry plantations in Sweden during the last few years, and if the joint effects of bacteria and frost injury are synergistic, extensive sampling of shoots from diseased Salix plants was performed. We performed several laboratory and greenhouse investigations and used evaluation techniques on the functions of the Ice-Nucleation Active (INA) bacteria. We carried out a comparison between spring and autumn bacterial communities isolated from within (endophytically) and surface (epiphytically) plant tissues of Salix viminalis. Seasonal variation of bacteria in willow clones with different levels of frost sensitivity and symptoms of bacterial damage was also investigated. We further focussed on possible effect of fertilisation and nutrient availability on the bacterial community in relation to plant dieback in Estonian willow plantations. The identification and detection of INA bacteria which cause damage in combination with frost to willow (Salix spp) plants in late fall, winter and spring was performed using BIOLOG MicroPlate, biochemical tests, selective INA primers and 16S rDNA analysis. To distinguish the character for differentiation between these bacteria morphologically and with respect to growing ability different culture media were used. We studied the temperature, at which ice nucleation occurred for individual bacteria, estimated the population of INA bacteria, effect of growth limiting factors, and evaluated the effect of chemical and physical agents for disruption and possible inhibition of INA among individual bacterial strains. The concentration of carbon, nitrogen and phosphorus on INA is discussed. We demonstrate that among the bacterial isolates recovered from the willow plantations, there were many that were capable of ice nucleation at temperatures between -2 and -10 deg C, many that were capable of inducing a

  13. Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

    Science.gov (United States)

    Alim, Mohammad A.; Rezazadeh, Ali A.; Gaquiere, Christophe

    2016-12-01

    Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

  14. A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

    Directory of Open Access Journals (Sweden)

    Dong-Hwan Shin

    2017-10-01

    Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

  15. Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.

    2015-11-01

    In this paper, a high performance AlGaN/GaN High Electron Mobility Transistor (HEMT) on SiC substrates is presented to improve the electrical operation with the amended depletion region using a multiple recessed gate (MRG-HEMT). The basic idea is to change the gate depletion region and a better distribution of the electric field in the channel and improve the device breakdown voltage. The proposed gate consists of lower and upper gate to control the channel thickness. Also, the charge of the depletion region will change due to the optimized gate. In addition, a metal between the gate and drain including the horizontal and vertical parts is used to better control the thickness of the channel. The breakdown voltage, maximum output power density, cut-off frequency, maximum oscillation frequency, minimum noise figure, maximum available gain (MAG), and maximum stable gain (MSG) are some parameters for designers which are considered and are improved in this paper.

  16. 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

    Science.gov (United States)

    Bagumako, Sonia; Desplanque, Ludovic; Wichmann, Nicolas; Bollaert, Sylvain; Danneville, François; Wallart, Xavier

    2014-01-01

    We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies f T/f max of 100/125 GHz together with minimum noise figure NFmin = 0.5 dB and associated gain G ass = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime. PMID:24707193

  17. Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

    Science.gov (United States)

    Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

    2015-02-01

    InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

  18. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d......-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.......This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time...

  19. 100 nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications.

    Science.gov (United States)

    Gardès, Cyrille; Bagumako, Sonia; Desplanque, Ludovic; Wichmann, Nicolas; Bollaert, Sylvain; Danneville, François; Wallart, Xavier; Roelens, Yannick

    2014-01-01

    We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.

  20. 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

    Directory of Open Access Journals (Sweden)

    Cyrille Gardès

    2014-01-01

    Full Text Available We report on high frequency (HF and noise performances of AlSb/InAs high electron mobility transistor (HEMT with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/fmax of 100/125 GHz together with minimum noise figure NFmin=0.5 dB and associated gain Gass=12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.

  1. Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

    OpenAIRE

    Chou, Po-Chien; Chen, Szu-Hao; Hsieh, Ting-En; Cheng, Stone; Chang, Edward; del Alamo, Jesus A

    2016-01-01

    This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed...

  2. An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient

    Science.gov (United States)

    Xie, Gang; Tang, Cen; Wang, Tao; Guo, Qing; Zhang, Bo; Sheng, Kuang; Wai, Tung Ng

    2013-02-01

    An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with a conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at VGS = -5 V. In contrast, a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without a field plate (no FP) and with an optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of -0.113 V/K and -0.065 V/K, respectively.

  3. An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient

    International Nuclear Information System (INIS)

    Xie Gang; Tang Cen; Wang Tao; Guo Qing; Sheng Kuang; Zhang Bo; Ng Wai Tung

    2013-01-01

    An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with a conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at V GS = −5 V. In contrast, a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without a field plate (no FP) and with an optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of −0.113 V/K and −0.065 V/K, respectively. (condensed matter: structural, mechanical, and thermal properties)

  4. Highly efficient GaN HEMTs transformer-less single-phase inverter for grid-tied fuel cell

    Science.gov (United States)

    Alatawi, Khaled; Almasoudi, Fahad; Matin, Mohammad

    2017-08-01

    Transformer-less inverters are the most efficient approach to utilize renewable energy sources for grid tied applications. In this paper, a grid-tied fuel cell transformer-less single-phase inverter equipped with GaN HEMTs is proposed. The new topology is derived from conventional H5 inverter. The benefits of using GaN HEMTs are to enable the system to switch at high frequency, which will reduce the size, volume and cost of the system. Moreover, inverter control is designed and proposed to supply real power to the grid and to work as DSTATCOM to mitigate any voltage sag and compensate reactive power in the system. A comparison of the performance of the proposed inverter with Si IGBT and GaN HEMTs was presented to analyze the benefits of using WBG devices. The switching strategy of the new topology creates a new current path which reduces the conduction losses significantly. The analysis of the proposed system was carried out using MATLAB/SIMULINK and PSIM and the results show that the proposed controller improves voltage stability, power quality, mitigates voltage sag and compensates reactive power. Accordingly, the results prove the effectiveness of the system for grid-tied applications.

  5. Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

    Directory of Open Access Journals (Sweden)

    Po-Chien Chou

    2017-02-01

    Full Text Available This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS high electron mobility transistors (HEMTs. When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions. There are three major stress conditions that include: VDS = 0 V, off, and off (cascode-connection states. Changes of direct current (DC figures of merit in voltage step-stress experiments are measured, statistics are studied, and correlations are investigated. Hot electron stress produces permanent change which can be attributed to charge trapping phenomena and the generation of deep levels or interface states. The simultaneous generation of interface (and/or bulk and buffer traps can account for the observed degradation modes and mechanisms. These findings provide several critical characteristics to evaluate the electrical reliability of GaN MIS-HEMTs which are borne out by step-stress experiments.

  6. Direct evidence of strain transfer for InAs island growth on compliant Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

    2015-04-13

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

  7. On the processing of InAs and InSb photodiode applications

    Energy Technology Data Exchange (ETDEWEB)

    Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

    2008-07-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. On the processing of InAs and InSb photodiode applications

    International Nuclear Information System (INIS)

    Odendaal, V.; Botha, J.R.; Auret, F.D.

    2008-01-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Studies on the controlled growth of InAs nanostructures on scission surfaces

    International Nuclear Information System (INIS)

    Bauer, J.

    2006-01-01

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {110}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {110}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  10. Electron transport in InAs nanowires and heterostructure nanowire devices

    Science.gov (United States)

    Thelander, C.; Björk, M. T.; Larsson, M. W.; Hansen, A. E.; Wallenberg, L. R.; Samuelson, L.

    2004-09-01

    Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states.

  11. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  12. Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Mueller, P.

    1990-01-01

    Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates τ ρ -1 - ρne 2 /m * and τ x -1 2πkub(B)X/h/2π (where X is the Dingle temperature). The measured conduction electron density after irradiation and thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given. (author)

  13. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

    Science.gov (United States)

    Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

    2018-05-01

    A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

  14. Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

    Energy Technology Data Exchange (ETDEWEB)

    Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

    1995-12-31

    Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

  15. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

    Science.gov (United States)

    Anyebe, Ezekiel A.; Sandall, I.; Jin, Z. M.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, Timothy D.; Cao, Y. C.; Li, H. D.; Harvey, R.; Zhuang, Q. D.

    2017-04-01

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

  16. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Science.gov (United States)

    Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

    2017-07-01

    InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

  17. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Dionizio Moreira, M [Divisao de Metrologia de Materiais (DIMAT), INMETRO, CEP 25250-020, Xerem, Duque de Caxias, RJ (Brazil); Venezuela, P [Instituto de Fisica, Universidade Federal Fluminense, Campus da Praia Vermelha, CEP 24210-240, Niteroi, RJ (Brazil); Miwa, R H [Instituto de Fisica, Universidade Federal de Uberlandia, C.P. 593, CEP 38400-902, Uberlandia, MG (Brazil)

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As{r_reversible}P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  18. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.

    Science.gov (United States)

    Anyebe, Ezekiel A; Sandall, I; Jin, Z M; Sanchez, Ana M; Rajpalke, Mohana K; Veal, Timothy D; Cao, Y C; Li, H D; Harvey, R; Zhuang, Q D

    2017-04-10

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

  19. Nexus between directionality of terahertz waves and structural parameters in groove patterned InAs

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Jong-Hyuk; Min, Kyunggu; Jeong, Hoonil; Jho, Young-Dahl [School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Eun-Hye; Song, Jin-Dong [Center for Opto-Electronics Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

    2013-04-07

    We performed terahertz (THz) time-domain spectroscopy in various geometries, for characterizing the directivity of THz waves emitted from groove patterned InAs structures. We first identified two transient transport processes as underlying THz emission mechanisms in InAs epilayers with different thicknesses. Carrier drift around the surface depletion region was predominant for the THz wave generation in the thin sample group (10-70 nm), whereas electronic diffusion overrode the drift currents in the thick sample group (370-900 nm) as revealed by the amplitude change and phase reversal. Through a combination of electron-beam lithography and inductively coupled plasma etching in 1 {mu}m-thick InAs epilayers, we could further periodically fabricate either asymmetric V-groove patterns or symmetric parabolic apertures. The THz amplitude was enhanced, particularly along the line-of-sight transmissive direction when the periodic groove patterns act as microscale reflective mirrors separated by a scale of the diffusion length.

  20. Geometric factors in the magnetoresistance of n-doped InAs epilayers

    KAUST Repository

    Sun, Jian

    2013-11-27

    We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

  1. Demonstration of an RF front-end based on GaN HEMT technology

    Science.gov (United States)

    Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

    2017-05-01

    The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

  2. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs

    International Nuclear Information System (INIS)

    Zhong Yinghui; Zhang Yuming; Wang Xiantai; Su Yongbo; Cao Yuxiong; Jin Zhi; Liu Xinyu

    2012-01-01

    We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz. The characteristics of HEMTs with side-etched region lengths (L side ) of 300, 412 and 1070 nm were analyzed. With the increase in L side , the kink effect became notable in the DC characteristics, which resulted from the surface state and the effect of impact ionization. The kink effect was qualitatively explained through energy band diagrams, and then eased off by reducing the L side . Meanwhile, the L side dependence of the radio frequency characteristics, which were influenced by the parasitic capacitance, as well as the parasitic resistance of the source and drain, was studied. This work will be of great importance in fabricating high-performance InP HEMTs. (semiconductor devices)

  3. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

    Directory of Open Access Journals (Sweden)

    Yacine Halfaya

    2016-02-01

    Full Text Available We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO 2 and 15 ppm-NH 3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

  4. The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination.

    Science.gov (United States)

    Ko, Kwang-Man; Seo, Jung-Han; Kim, Dong-Eun; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

    2009-06-03

    It is found that the surface migration and nucleation behaviors of InSb quantum dots on AlSb/Si substrates, formed by molecular beam epitaxy in Stranski-Krastanov (SK) growth mode, are dependent on the substrate temperature. At relatively high temperatures above 430 degrees C, quantum dots are migrated and preferentially assembled onto the surface steps of high defect AlSb layers grown on Si substrates, while they are uniformly distributed on the surface at lower temperatures below 400 degrees C. It is also found that quantum dots located on the defect sites lead to effective termination of the propagation of micro-twin-induced structural defects into overlying layers, resulting in the low defect material grown on a largely mismatched substrate. The resulting 1.0 microm thick Al(x)Ga(1-x)Sb (x = 0.8) layer grown on the silicon substrate shows atomically flat (0.2 nm AFM mean roughness) surface and high crystal quality, represented by a narrow full width at half-maximum of 300 arc s in the x-ray rocking curve. The room-temperature electron mobility of higher than 16 000 cm(2) V(-1) s(-1) in InAs/AlGaSb FETs on the Si substrate is obtained with a relatively thin buffer layer, when a low defect density ( approximately 10(6) cm(-2)) AlGaSb buffer layer is obtained by the proposed method.

  5. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  6. Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors

    Science.gov (United States)

    Han, Sangmoon; Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Seoung-Ki; Hwang, Jeongwoo; Chung, Dong Chul; Kim, Jin Soo

    2018-02-01

    We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 kΩ and 0.19 Ω cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 kΩ and 0.39 Ω cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature.

  7. Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices

    Science.gov (United States)

    Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Yi

    This paper examines the effect of the field plate structure on the RF performance of AlGaN/GaN High Electron Mobility Transistor (HEMT) devices. While the field plate structure helps to increase the breakdown voltage of the device through modulating the electric field locally, it induces additional feedback capacitance from drain to gate. Such feedback capacitors may impact the overall RF performance of the device especially at high frequencies. Systematic investigations on the small signal as well as power performance as functions of the drain biases are presented.

  8. Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

    OpenAIRE

    Cucak, Dejana; Vasic, Miroslav; García, Oscar; Bouvier, Yann; Oliver Ramírez, Jesús Angel; Alou Cervera, Pedro; Cobos Márquez, José Antonio; Wang, Ashu; Martin Horcajo, Sara; Romero Rojo, Fátima; Calle Gómez, Fernando

    2014-01-01

    Abstract: In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the device. In this way, it is possible to optimize the design of a switching device for a particular application, which in our case is a high frequency DC DC converter for Envel...

  9. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

    Science.gov (United States)

    Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

    2017-11-01

    As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

  10. Note: Ultra-high frequency ultra-low dc power consumption HEMT amplifier for quantum measurements in millikelvin temperature range.

    Science.gov (United States)

    Korolev, A M; Shnyrkov, V I; Shulga, V M

    2011-01-01

    We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 μW at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices.

  11. Characterization and Modeling I(V of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN

    Directory of Open Access Journals (Sweden)

    N. Benyahya

    2014-05-01

    Full Text Available In this paper, we have studied the Schottky contact of Ni/Au/AlInN/GaN HEMTs. The current–voltage Igs (Vgs of Ni/Au/AlInN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3, barrier height (0.72 eV and series resistance (33 W were evaluated from I(V data, the threshold voltage (-2.42 V, the 2D gas density (1.35 ´ 1013 cm-2 and barrier height (0.94 eV were evaluated from C(V data.

  12. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    -domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.......This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time...

  13. PERBANDINGAN PERTUMBUHAN STREPTOCOCCUS MUTANS INA99 PADA BERBAGAI MEDIA PERBENIHAN PADAT

    Directory of Open Access Journals (Sweden)

    Yayuk Yuliarsi

    2015-07-01

    Full Text Available Previous study shows that tryptone-yeast extract-cystine-sucrose is choice of the culture media for isolating and growing S. mutans serotype C, but the effectiveness in stepping up the recovery growth of the bacteria has never been compared with that of the blood agar added to yeast extract and sucrose. This study was come to find out the growth of S. mutans serotype-c with blood agar-yest extract-sucrose, S. mutans INA99 serotype-c is identified, sliced, and cultured into blood agar-yeast extract-sucrose, brucella agar blood-yeast extract sucrose, blood agar and tryptone-yeast extract-cystine-sucrose, each 4 slices. The average amount of blood agar colonies that grows after an incubation of 2x24 hours in an anaerob conditionof 37 C, diluted by 40 time is 4.890. In blood agar-yeast extract-sucrose, the average colony is 145.600, diluted 1.600 time. In brucella agar blood-yeast extract-sucrose, the average colony is 103.50, diluted 40 times. In tryptone-yeast extract-cystine-sucrose the average colony is 2.430, diluted 40 times. Statistical result shows that, there are significant difference (p=0.000 between the total colonies of S. mutans INA99 serotype c which grows on the different types of culture media. The largest amount of colony is present on blood agar-yeast extract-sucrose, the followed by brucella agar blood-yeast extract-sucrose, blood agar and tryptone-yeast extract-cystine-sucrose. Conclusion : blood agar which added yeast extract and sucrose is the best culture media for S. mutans INA99 serotype c growth.

  14. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K; Transistor balistique quantique et HEMT bas-bruit pour la cryoelectronique inferieure a 4.2 K

    Energy Technology Data Exchange (ETDEWEB)

    Gremion, E

    2008-01-15

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 {mu}W. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/{radical}(Hz) at 1 kHz and 0.12 nV/{radical}(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  15. Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Egorov, A.Yu. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bedarev, D. [Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bernklau, D.; Riechert, H. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Dumitras, G. [Technical Univ. of Munich, Garching (Germany). Dept. of Physics E16

    2001-04-01

    Self-assembled InAs quantum dots (QDs) are fabricated in In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} and In{sub 0.06}Ga{sub 0.94}As{sub 0.98}N{sub 0.02} matrices on GaAs by solid source molecular beam epitaxy. The influence of InAs average layer thickness and matrix material on photoluminescence properties are studied. We observe a photoluminescence peak wavelength up to 1.49 {mu}m from structures with a nominal InAs thickness of four monolayers (ML). For QD structures emitting at 1.3 {mu}m, no saturation of ground state luminescence and no excited state photoluminescence are detected. This should lead to an improved performance of 1.3 {mu}m quantum dot lasers on GaAs. (orig.)

  16. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  17. ESTUDO DE PRIMEIROS PRINCÍPIOS DE NANOFIOS DE INAS SUBMETIDOS A TENSÕES EXTREMAS

    OpenAIRE

    Leonardo Fernandes Sampaio

    2015-01-01

    Nanofios, devido às suas caracteristícas estruturais únicas, são candidatos naturais para dispositivos condutores de eletricidade e calor. Quando estes nanofios formam parte de um dispositivo, podem estar sujeitos a tensões externas que podem alterar as suas propriedades intrínsecas. Neste trabalho estudaremos o comportamento mecânico e eletrônico de nanofios de InAs com diferentes diâmetros quando sujeitos a tensões externas extremas. Nossos cálculos usam a Teoria do Funcional...

  18. Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

    International Nuclear Information System (INIS)

    Eble, B.; Krebs, O.; Voisin, P.; Lemaitre, A.; Kudelski, A.; Braun, P.F.; Lombez, L.; Marie, X.; Urbaszek, B.; Amand, T.; Lagarde, D.; Renucci, P.; Kowalik, K.; Kalevich, V.K.; Kavokin, K.V.

    2006-01-01

    We present a detailed study of the hyperfine interaction between carrier and nuclear spins in InAs semiconductor quantum dots. Time resolved measurements on excitons in positively charged quantum dots show the electron spin relaxation due to random fluctuations of the spin orientation of the nuclei in the quantum dot. A complimentary aspect of the hyperfine interaction can be uncovered in single dot continuous wave photoluminescence experiments in a weak magnetic field, namely the Overhauser shift due to the dynamic polarisation of the nuclei following excitation with circularly polarised light. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Influence of nitrogen on the growth and the properties of InAs quantum dots

    International Nuclear Information System (INIS)

    Schumann, O.

    2004-01-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  20. PERBANDINGAN PERTUMBUHAN STREPTOCOCCUS MUTANS INA99 PADA BERBAGAI MEDIA PERBENIHAN PADAT

    OpenAIRE

    Yayuk Yuliarsi; Takarsyah M. Putra; Boedi Oe. Roeslan

    2015-01-01

    Previous study shows that tryptone-yeast extract-cystine-sucrose is choice of the culture media for isolating and growing S. mutans serotype C, but the effectiveness in stepping up the recovery growth of the bacteria has never been compared with that of the blood agar added to yeast extract and sucrose. This study was come to find out the growth of S. mutans serotype-c with blood agar-yest extract-sucrose, S. mutans INA99 serotype-c is identified, sliced, and cultured into blood agar-yeast ex...

  1. Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles

    Science.gov (United States)

    Li, Luying; Gan, Zhaofeng; McCartney, Martha R.; Liang, Hanshuang; Yu, Hongbin; Gao, Yihua; Wang, Jianbo; Smith, David J.

    2013-01-01

    The atomic arrangements of two types of InAs dislocation cores associated by a Z-shape faulted dipole are observed directly by aberration-corrected high-angle annular-dark-field imaging. Single unpaired columns of different atoms in a matrix of dumbbells are clearly resolved, with observable variations of bonding lengths due to excess Coulomb force from bare ions at the dislocation core. The corresponding geometric phase analysis provides confirmation that the dislocation cores serve as origins of strain field inversion while stacking faults maintain the existing strain status. PMID:24231692

  2. Spin-lattice relaxation times and knight shift in InSb and InAs

    International Nuclear Information System (INIS)

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  3. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Soerensen, B. S.; Aagesen, M.; Soerensen, C. B.; Lindelof, P. E.; Martinez, K. L.; Nygaard, J.

    2008-01-01

    We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowire surface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence (10-10 5 ) of the on-off ratio caused by the surface inversion layer

  4. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-11-07

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  5. Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs

    Science.gov (United States)

    Du, Jiangfeng; Wang, Kang; Liu, Yong; Bai, Zhiyuan; Liu, Yang; Feng, Zhihong; Dun, Shaobo; Yu, Qi

    2017-03-01

    The influence of mesa edge capacitance on the frequency characteristics of AlGaN/GaN HEMTs with 90 nm gate length was studied in this paper. To extract mesa edge capacitances, a small-signal equivalent circuit model considering mesa edge capacitances was provided. Based on the model, the intrinsic gate capacitances of AlGaN/GaN HEMTs with 2 × 20 μm, 2 × 30 μm, 2 × 40 μm, and 2 × 50 μm gate widths were extracted, respectively. Through linear fitting along gate width for the extracted results and simulations, 8.06 fF/μm2 of mesa edge capacitances at Vgs = -4.5 V and Vds = 8 V in the devices with 2 × 20 μm gate width was obtained, which can be about 33.2% of the total gate capacitance. Mesa edge capacitances results in a significant drop of current-gain cut-off frequency (fT), and the effect is more serious in the shorter gate length devices.

  6. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2017-12-01

    Full Text Available In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS, no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  7. Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

    Science.gov (United States)

    Majumdar, Shubhankar; Das, S.; Biswas, D.

    2015-08-01

    Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

  8. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K

    International Nuclear Information System (INIS)

    Gremion, E.

    2008-01-01

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/√(Hz) at 1 kHz and 0.12 nV/√(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  9. Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage

    Science.gov (United States)

    Jesudas Anand, Mulagumoottil; Ng, Geok Ing; Arulkumaran, Subramaniam; Ranjan, Kumud; Vicknesh, Sahmuganathan; Ang, Kian Siong

    2015-03-01

    The impact of low-k dielectric benzocyclobutane (BCB) encapsulation on the electrical performance and structural stability of AlGaN/GaN HEMTs on Si were investigated. After BCB encapsulation, devices exhibited no degradation in their drain current density, extrinsic transconductance and small signal microwave performances. The curing temperature (280 °C) of BCB layer had no influence on the device electrical performances. Compared to devices without BCB encapsulation, the BCB encapsulated devices achieved ∼2 orders of magnitude lower gate- and drain-leakage current. An order of magnitude lower surface leakage current was also observed by BCB encapsulation between the two adjacent mesas. Due to the reduction of leakage currents, ∼2-times increase of OFF-state breakdown voltage was observed. In addition, the 9-µm-thick BCB encapsulation layer also helps to have structurally stable air bridges. This work demonstrates the low-k dielectric BCB as a viable solution for the complete encapsulation of GaN HEMTs and ICs.

  10. Operativni i vizuelni nedostatci mašina i opreme za aplikaciju pesticida u svetinikolskoj opštini

    OpenAIRE

    Dimitrovski, Zoran; Dimitrov, Sasko; Mihajlov, Vanco

    2016-01-01

    Direktiva 2009/128 / EC Evropskog parlamenta uspostavlja okvir za sprovođenje Nacionalnog akcionog plana u svakoj zemlji, koji se odnosi na održivo korišćenje pesticida. Jedna od oblasti koje su obuhvaćene Direktivom se direktno odnosi na uvođenje obaveznog praćenja i nadzora mašina za primenu pesticida. U Republici Makedonij se ne sprovodi inspekcija ovih mašina, a s druge strane, kao zemlja kandidat Makedonija je obavezna da uskladi svoje propise sa evropskim. Glavni ci...

  11. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    KAUST Repository

    Rota, Michele B.

    2017-07-12

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

  12. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  13. AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

    Science.gov (United States)

    Bi, Zhi-Wei; Feng, Qian; Hao, Yue; Wang, Dang-Hui; Ma, Xiao-Hua; Zhang, Jin-Cheng; Quan, Si; Xu, Sheng-Rui

    2010-07-01

    We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance-voltage (C-V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.

  14. AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Zhi-Wei, Bi; Qian, Feng; Yue, Hao; Xiao-Hua, Ma; Jin-Cheng, Zhang; Si, Quan; Sheng-Rui, Xu; Dang-Hui, Wang

    2010-01-01

    We present an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD). Surface morphology of samples are observed by atomic force microscopy (AFM), indicating that the ALD NbAlO has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance–voltage (C–V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

    International Nuclear Information System (INIS)

    Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

    2012-01-01

    In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications. (interdisciplinary physics and related areas of science and technology)

  16. Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.

    Science.gov (United States)

    Karg, S F; Troncale, V; Drechsler, U; Mensch, P; Das Kanungo, P; Schmid, H; Schmidt, V; Gignac, L; Riel, H; Gotsmann, B

    2014-08-01

    Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).

  17. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  18. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    Science.gov (United States)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Lee, Ching-Sung; Wu, Yu-Sheng; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al2O3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (IDSS: 337.6 mA mm-1 → 462.9 mA mm-1), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BVGD: -103.8 V → -183.5 V), unity-gain cut-off frequency (fT: 11.3 GHz → 17.7 GHz), maximum oscillation frequency (fmax: 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring fT and fmax of the studied MOS-HEMT (Schottky-gate HEMT) are VGS = -2.5 (-2) V and VDS = 7 V. The corresponding VGS and VDS biases are -2.5 (-2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C-V) hysteresis is obtained in the Al2O3-MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300-480 K are also studied.

  19. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Wu, Yu-Sheng; Lee, Ching-Sung; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al 2 O 3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (I DSS : 337.6 mA mm −1  → 462.9 mA mm −1 ), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BV GD : −103.8 V → −183.5 V), unity-gain cut-off frequency (f T : 11.3 GHz → 17.7 GHz), maximum oscillation frequency (f max : 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring f T and f max of the studied MOS-HEMT (Schottky-gate HEMT) are V GS  = −2.5 (−2) V and V DS  = 7 V. The corresponding V GS and V DS biases are −2.5 (−2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C–V) hysteresis is obtained in the Al 2 O 3 -MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300–480 K are also studied. (paper)

  20. Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers.

    Science.gov (United States)

    Hu, Dongzhi; McPheeters, Claiborne Co; Yu, Edward T; Schaadt, Daniel M

    2011-01-12

    A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density. A set of four samples were compared: InAs QDs without in situ annealing with and without AlAs cap layer and InAs QDs in situ annealed with and without AlAs cap layer. Atomic force microscopy measurements show that when in situ annealing of QDs without AlAs capping layers is investigated, holes and dashes are present on the device surface, while capping with one monolayer AlAs improves the device surface. On unannealed samples, capping the QDs with one monolayer of AlAs improves the spectral response, the open-circuit voltage and the fill factor. On annealed samples, capping has little effect on the spectral response but reduces the short-circuit current, while increasing the open-circuit voltage, the fill factor and power conversion efficiency.

  1. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    NARCIS (Netherlands)

    Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

  2. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    Bull, D.J.

    1977-01-01

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

  3. Calcium homeostasis in photoreceptor cells of Drosophila mutants inaC and trp studied with the pupil mechanism

    NARCIS (Netherlands)

    Hofstee, CA; Stavenga, DG

    1996-01-01

    The light-driven pupil mechanism, consisting of an assembly of mobile pigment granules inside the photoreceptor cells, has been investigated by in vivo reflection microspectrophotometry in wild type (WT) Drosophila and in the photoreceptor mutants inaC and trp. The pupillary response of a

  4. Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

    DEFF Research Database (Denmark)

    Saldaña, J. C. Estrada; Žitko, R.; Cleuziou, J. P.

    2018-01-01

    We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe...

  5. Neutron diffraction determination of mean-square atomic displacements in InAs and GaSb

    International Nuclear Information System (INIS)

    Tibballs, J.E.; Feteris, S.M.; Barnea, Z.

    1981-01-01

    Integrated intensities for Bragg reflection of neutrons from single crystals of the III-V compounds InAs and GaSb have been measured at room temperature. The data were collected at two wave-lengths, 0.947 and 1.241 A, in order to establish the adequacy of a correction for moderate to severe anisotropic extinction. Data were also obtained for InAs at four temperatures from 408 to 933 K. Corrections for thermal diffuse scattering were applied. The results were analysed in the one-particle potential perturbation approximation with terms to fourth order in the atomic displacements u(u 1 , u 2 , u 3 ). At 296 K, the mean-square components usub(s) 2 determined were: In, 0.0116(2) A 2 ; As, 0.0102(1) A 2 ; and Ga, 0.0120(3)A 2 ; Sb, 0.0107(3)A 2 . The third-order coefficients for InAs are comparable with those for Si and Ge, while those for GaSb are comparable with those for zinc chalcogenides. Below 400 K, the mean-square displacements in InAs decrease faster than predicted by the present perturbation approach

  6. A comparison of the 60Co gamma radiation hardness, breakdown characteristics and the effect of SiNx capping on InAlN and AlGaN HEMTs for space applications

    International Nuclear Information System (INIS)

    Smith, M D; Parbrook, P J; O’Mahony, D; Vitobello, F; Muschitiello, M; Costantino, A; Barnes, A R

    2016-01-01

    Electrical performance and stability of InAlN and AlGaN high electron mobility transistors (HEMTs) subjected 9.1 mrad of 60 Co gamma radiation and off-state voltage step-stressing until breakdown are reported. Comparison with commercially available production-level AlGaN HEMT devices, which showed negligible drift in DC performance throughout all experiments, suggests degradation mechanisms must be managed and suppressed through development of advanced epitaxial and surface passivation techniques in order to fully exploit the robustness of the III-nitride material system. Of the research level devices without dielectric layer surface capping, InAlN HEMTs exhibited the greater stability compared with AlGaN under off-state bias stressing and gamma irradiation in terms of their DC characteristics, although AlGaN HEMTs had significantly higher breakdown voltages. The effect of plasma-enhanced chemical vapour deposition SiN x surface capping is explored, highlighting the sensitivity of InAlN HEMT performance to surface passivation techniques. InAlN–SiN x HEMTs suffered more from trap related degradation than AlGaN–SiN x devices in terms of radiation hardness and step-stress characteristics, attributed to an increased capturing of carriers in traps at the InAlN/SiN x interface. (paper)

  7. Tehničke mere za smanjenje broja nesreća sa učešćem poljoprivrednih mašina

    OpenAIRE

    Gligorevic, Kosta; Oljaca, Mico; Radojcic, Dušan; Dimitrovski, Zoran

    2016-01-01

    Istraživanja pokazuju da su nesreće sa mobilnom poljoprivrednom mehanizacijom u Republici Srbiji veoma česta pojava. Osnovni problemi su: nedostatak obuke za pravilno korišćenje i održavanje mašina, nedovoljno poznavanje saobraćajnih propisa vozača traktora, neodgovornost i nedisciplina prilikom korišćenja traktora i poljoprivredih mašina. U radu su predstavljene tehničke mere kojima se broj nesreća može smanjiti, uz veće poštovanje zakona iz oblasti sigurnosti rada mašina, ...

  8. Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure

    Science.gov (United States)

    Wang, Wen; Yu, Xinxin; Zhou, Jianjun; Chen, Dunjun; Zhang, Kai; Kong, Cen; Lu, Haiyan; Kong, Yuechan; Li, Zhonghui; Chen, Tangsheng

    2016-12-01

    A novel method of improving RF performance for AlGaN/GaN HEMT by introducing a cavity structure under the gate-head of the T-shaped gate is proposed, which can effectively reduce the parasitic gate capacitance. The device with cavity structure presents quite similar DC characteristics with the conventional device without cavity, including a maximum drain current density of 1.16 A/mm, a peak transconductance of 424 mS/mm and a slightly degraded two-terminal breakdown voltage of 29 V. However, in comparison with the device without cavity, the device with cavity presents the significant improvements in small signal characteristics, with the fT increasing from 60 GHz to 84 GHz and the fmax increasing from 93 GHz to 104 GHz.

  9. SEMICONDUCTOR DEVICES: Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

    Science.gov (United States)

    Yan, Pu; Lei, Pang; Liang, Wang; Xiaojuan, Chen; Chengzhan, Li; Xinyu, Liu

    2009-12-01

    The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in large-signal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract Rg. In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and fT and fmax can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S -parameters in the range of 0.1 to 26.1 GHz.

  10. A novel AlGaN/GaN HEMT with a p-layer in the barrier

    Science.gov (United States)

    Razavi, S. M.; Zahiri, S. H.; Hosseini, S. E.

    2013-12-01

    The potential impact of gallium-nitride (GaN) high electron mobility transistor (HEMT) with a p-layer in the barrier is reported. We investigate the device performance focusing on short channel effects, gate-drain capacitance, electric field, breakdown voltage, DC output conductance (go), drain current, DC trans-conductance (gm) and sub-threshold slope using two-dimensional and two-carrier device simulations. Our simulation results reveal that the proposed structure reduces the short channel effects, gate-drain capacitance, sub-threshold slope and go compared to the conventional and T-gate structures. Also this new structure reduces the peak electric field at the gate corner near the drain and consequently increases the breakdown voltage significantly. Increasing p-layer length (Lp) and thickness (Tp), improves the breakdown voltage, short channel effects, gate-drain capacitance and go.

  11. Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

    International Nuclear Information System (INIS)

    Pu Yan; Pang Lei; Wang Liang; Chen Xiaojuan; Li Chengzhan; Liu Xinyu

    2009-01-01

    The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in large-signal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract R g . In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and f T and f max can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz. (semiconductor devices)

  12. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  13. Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

    International Nuclear Information System (INIS)

    Rodilla, H; Moschetti, G; Grahn, J; González, T; Mateos, J

    2012-01-01

    In this work, the extrinsic dynamic behavior and noise performance of a 225 nm isolated-gate InAs/AlSb high electron mobility transistor (HEMT) have been studied by means of Monte Carlo simulations. A very good agreement with experimental results has been achieved for f T . Discrepancies between experimental and simulated f max have been observed and attributed to the experimental frequency dispersion of g d and C ds . The simulations of the intrinsic and extrinsic noise parameters indicate an excellent performance for this device (F min = 0.3 dB at 10 GHz) even if we confirm that the presence of the native oxide under the gate induces a significant decrease in f T and f max of around 20%, together with an increase of noise figure and noise resistance

  14. Isolation, Fractionation and Characterization of Catalase from Neurospora crassa (InaCC F226)

    Science.gov (United States)

    Suryani; Ambarsari, L.; Lindawati, E.

    2017-03-01

    Catalase from Indigenous isolate Neurospora crassa InaCC F226 has been isolated, fractionated and characterized. Production of catalase by Neurospora crassa was done by using PDA medium (Potato Dextrosa Agar) and fractionated with ammonium sulphate with 20-80% saturation. Fraction 60% was optimum saturation of ammonium sulphate and had highest specific activity 3339.82 U/mg with purity 6.09 times, total protein 0.920 mg and yield 88.57%. The optimum pH and temperature for catalase activity were at 40°C and pH 7.0, respectively. The metal ions that stimulated catalase activity acted were Ca2+, Mn2+ and Zn2+, and inhibitors were EDTA, Mg2+ and Cu2+. Based on Km and Vmax values were 0.2384 mM and 13.3156 s/mM.

  15. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates

    Science.gov (United States)

    Aagesen, Martin; Johnson, Erik; Sørensen, Claus B.; Mariager, Simon O.; Feidenhans'l, Robert; Spiecker, Erdmann; Nygård, Jesper; Lindelof, Poul Erik

    2007-12-01

    Free-standing nanostructures such as suspended carbon nanotubes, graphene layers, III-V nanorod photonic crystals and three-dimensional structures have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics. Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements. The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications.

  16. Tunable emission from InAs quantum dots gated with graphene

    Science.gov (United States)

    Kinnischtzke, Laura; Goodfellow, Kenneth; Chakraborty, Chitraleema; Lai, Yiming; Badolato, Antonio; Vamivakas, Nick

    We demonstrate Stark shifted photo-luminescence from InAs quantum dots (QD) using an n-i-Schottky diode where graphene has been used as the Schottky barrier material. This hybrid photonic device is motivated by the need for tunable single photon sources with high flux and storage capabilities. Photonic crystal nanocavities decorated with a single QD provide a rich environment for coupling spins and photons, in addition to accessing cavity quantum electrodynamic physics. Methods currently used for electrically tuning the QD inside the cavity suffer from a loss of the cavity quality factor, or high leakage currents in the diode which impacts the spin-photon coupling of the device. Our measurements are a first step towards using a graphene flake to electrically tune the emission of a strongly coupled QD-cavity system. NSF Grant No. DMR-1309734.

  17. Size and shape dependent optical properties of InAs quantum dots

    Science.gov (United States)

    Imran, Ali; Jiang, Jianliang; Eric, Deborah; Yousaf, Muhammad

    2018-01-01

    In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.

  18. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

    Science.gov (United States)

    Vigneau, Florian; Zeng, Zaiping; Escoffier, Walter; Caroff, Philippe; Leturcq, Renaud; Niquet, Yann-Michel; Raquet, Bertrand; Goiran, Michel

    2018-03-01

    The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

  19. [Satisfaction with perinatal care in Vysočina region in the period between October 2013 and September 2014].

    Science.gov (United States)

    Takács, L; Seidlerová, J Mlíková; Smolík, F; Hoskovcová, S; Antonín, P; Vařáková, J; Valová, A; Svoboda, T; Dočkalová, J

    2015-12-01

    To assess women's satisfaction with perinatal care provided in maternity hospitals in Vysočina region, to identify the areas with high satisfaction scores as well as those requiring improvement, and to describe the factors influencing women's satisfaction, i. e. dissatisfaction with the care provided during labor and birth and the early postpartal period. Original study. Department of Psychology, Faculty of Philo-sophy, Charles University, Prague. The satisfaction survey was conducted in all maternity hospitals in Vysočina region (Jihlava, Havlíčkův Brod, Třebíč, Pelhřimov, Nové město na Moravě) during the period between October 2013 and September 2014. All women who had given birth in those hospitals during the period were approached and asked to participate in this survey. The women evaluated the perinatal care not before 58 days after birth, so that the evaluation of perinatal care did not take place directly during their stay at maternity hospital. In total, 1366 women took part in the study. The original Czech questionnaire KLI-P was used for the data collection. The KLI-P measures psychosocial climate of maternity hospitals on the following six scales: helpfulness and empathy of caregivers; control and involvement in decision-making; communication of information and availability of caregivers; dismissive attitude and lack of interest; physical comfort and services. The satisfaction rates with component dimensions of intrapartal and postpartal care at the maternity hospitals in Vysočina region were compared to the satisfaction rates for the Czech Republic as a whole as obtained in our previous study. We used the Kruskal-Wallis test for this comparison. The ordinal logistical regression (cumulative logit model) was used to identify predictors of women's satisfaction with intrapartum and postpartum care in Vysočina region. The women who delivered at maternity hospitals in Vysočina region were significantly more satisfied with all dimensions of

  20. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  1. A Brief History of INA and ICOH SCNP: International Neurotoxicology Association and International Congress on Occupational Health Scientific Committee on Neurotoxicology and Psychophysiology

    Science.gov (United States)

    Two international scientific societies dedicated to research in neurotoxicology and neurobehavioral toxicology are the International Neurotoxicology Association (INA) and the International Congress on Occupational Health International Symposium on Neurobehavioral Methods and Effe...

  2. Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Sanchez, J; Alonso-Gonzalez, P; Herranz, J; Gonzalez, Y; Gonzalez, L [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760-Tres Cantos, Madrid (Spain)

    2009-03-25

    In this work, we present a fabrication process that combines atomic force microscopy (AFM) local oxidation nanolithography and molecular beam epitaxy (MBE) growth techniques in order to control both the nucleation site and number of InAs quantum dots (QDs) inside different motifs printed on GaAs(001) substrates. We find that the presence of B-type slopes (As terminated) inside the pattern motifs is the main parameter for controlling the selectivity of the pattern for InAs growth. We demonstrate that either single InAs QDs or multiple InAs QDs in a lateral arrangement (LQDAs) can be obtained, with a precise control in their position and QD number, simply by varying the fabricated oxide length along the [110] direction.

  3. Distorsión no lineal en un transmisor polar debida a la característica Ron(VDD) del dispositivo GaN HEMT

    OpenAIRE

    Marante Torres, Reinel; García García, José Ángel; Cabral, Pedro Miguel da Silva; Pedro, Jose Carlos Esteves Duarte

    2009-01-01

    In this paper, the possible impact of RF switching device ON resistance variation with drain supply voltage, Ron(VDD) characteristic, on polar transmitter distortion is considered. Using Pulsed I/V measurement results over a 15 W GaN HEMT, the deviation in the Vdd-to-AM modulation profile is estimated. System-level calculations, in the presence of gateto- drain capacitance contribution to carrier feedthrough, allow the evaluation of the secondary role of this dispersion effect.

  4. Inhibitions of late INa and CaMKII act synergistically to prevent ATX-II-induced atrial fibrillation in isolated rat right atria.

    Science.gov (United States)

    Liang, Faquan; Fan, Peidong; Jia, Jessie; Yang, Suya; Jiang, Zhan; Karpinski, Serge; Kornyeyev, Dmytro; Pagratis, Nikos; Belardinelli, Luiz; Yao, Lina

    2016-05-01

    Increases in late Na(+) current (late INa) and activation of Ca(2+)/calmodulin-dependent protein kinase (CaMKII) are associated with atrial arrhythmias. CaMKII also phosphorylates Nav1.5, further increasing late INa. The combination of a CaMKII inhibitor with a late INa inhibitor may be superior to each compound alone to suppress atrial arrhythmias. Therefore, we investigated the effect of a CaMKII inhibitor in combination with a late INa inhibitor on anemone toxin II (ATX-II, a late INa enhancer)-induced atrial arrhythmias. Rat right atrial tissue was isolated and preincubated with either the CaMKII inhibitor autocamtide-2-related inhibitory peptide (AIP), the late INa inhibitor GS458967, or both, and then exposed to ATX-II. ATX-II increased diastolic tension and caused fibrillation of isolated right atrial tissue. AIP (0.3μmol/L) and 0.1μmol/L GS458967 alone inhibited ATX-II-induced arrhythmias by 20±3% (mean±SEM, n=14) and 34±5% (n=13), respectively, whereas the two compounds in combination inhibited arrhythmias by 81±4% (n=10, pATX-induced increase of diastolic tension. Consistent with the mechanical and electrical data, 0.3μmol/L AIP and 0.1μmol/L GS458967 each inhibited ATX-II-induced CaMKII phosphorylation by 23±3% and 32±4%, whereas the combination of both compounds inhibited CaMKII phosphorylation completely. The effects of an enhanced late INa to induce arrhythmic activity and activation of CaMKII in atria are attenuated synergistically by inhibitors of late INa and CaMKII. Copyright © 2016 Elsevier Ltd. All rights reserved.

  5. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-01-01

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

  6. A new assessment method of pHEMT models by comparing relative errors of drain current and its derivatives up to the third order

    Science.gov (United States)

    Dobeš, Josef; Grábner, Martin; Puričer, Pavel; Vejražka, František; Míchal, Jan; Popp, Jakub

    2017-05-01

    Nowadays, there exist relatively precise pHEMT models available for computer-aided design, and they are frequently compared to each other. However, such comparisons are mostly based on absolute errors of drain-current equations and their derivatives. In the paper, a novel method is suggested based on relative root-mean-square errors of both drain current and its derivatives up to the third order. Moreover, the relative errors are subsequently relativized to the best model in each category to further clarify obtained accuracies of both drain current and its derivatives. Furthermore, one our older and two newly suggested models are also included in comparison with the traditionally precise Ahmed, TOM-2 and Materka ones. The assessment is performed using measured characteristics of a pHEMT operating up to 110 GHz. Finally, a usability of the proposed models including the higher-order derivatives is illustrated using s-parameters analysis and measurement at more operating points as well as computation and measurement of IP3 points of a low-noise amplifier of a multi-constellation satellite navigation receiver with ATF-54143 pHEMT.

  7. Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

    Energy Technology Data Exchange (ETDEWEB)

    Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)

    2016-10-15

    The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.

  8. Current-Voltage-Temperature (I-V-T Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    M. MOSTEFAOUI

    2014-05-01

    Full Text Available In this study, the forward bias current-voltage-temperature (I-V-T characteristics of (Mo/Au–AlGaN/GaN high electron mobility transistors (HEMTs have been investigated over the temperature range of 100-450K. The barrier height (Fb, ideality factor (n, series resistance (Rs and shunt resistance (Rp of (Mo/Au–AlGaN/GaN HEMTs have been calculated from their experimental forward bias current–voltage-temperature (I-V-T. The capacitance–voltage (C–V of (Au/Mo- AlGaN/GaN HEMTs were investigated at room temperature. The doping concentration (Nd and the bi- dimensional sheet carrier density (ns were evaluated from C–V data. The experimental results show that all forward bias semilogarithmic I-V curves for the different temperatures have a nearly common cross point at a certain bias voltage, even with finite series resistance (Rs. We found that the value of Fb and Rs increases by cons n and Rp decreases with increasing temperature. The values of Nss obtained by taking into account the Rs are about one order lower than those obtained without considering the Rs.

  9. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.

    2017-08-01

    The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

  10. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

    Science.gov (United States)

    Nigam, Adarsh; Bhat, Thirumaleshwara N.; Rajamani, Saravanan; Dolmanan, Surani Bin; Tripathy, Sudhiranjan; Kumar, Mahesh

    2017-08-01

    In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ˜1270cm2/Vs, ˜2×1013 cm-2 and ˜0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  11. Sulfur budget and global climate impact of the A.D. 1835 eruption of Cosigüina volcano, Nicaragua

    Science.gov (United States)

    Longpré, Marc-Antoine; Stix, John; Burkert, Cosima; Hansteen, Thor; Kutterolf, Steffen

    2014-10-01

    Large explosive volcanic eruptions can inject massive amounts of sulfuric gases into the Earth's atmosphere and, in so doing, affect global climate. The January 1835 eruption of Cosigüina volcano, Nicaragua, ranks among the Americas' largest and most explosive historical eruptions, but whether it had effects on global climate remains ambiguous. New petrologic analyses of the Cosigüina deposits reveal that the eruption released enough sulfur to explain a prominent circa A.D. 1835 sulfate anomaly in ice cores from both the Arctic and Antarctic. A compilation of temperature-sensitive tree ring chronologies indicates appreciable cooling of the Earth's surface in response to the eruption, consistent with instrumental temperature records. We conclude that this eruption represents one of the most important sulfur-producing events of the last few centuries and had a sizable climate impact rivaling that of the 1991 eruption of Mount Pinatubo.

  12. Raman Spectroscopy of InAs Based Nanowires & Electronic Characterization of Heterostructure InAs/GaInAs Nanowires

    DEFF Research Database (Denmark)

    Tanta, Rawa

    The work presented in this thesis represents two main topics. The first one, which covers a bigger volume of the thesis, is mainly about Raman spectroscopy on individual InAs based nanowires. The second part presents electronic characterization of heterostructure InAs/GaInAs nanowires. Raman...... modes. In the last chapter of this thesis we present a study on electrical characterization of InAs/GaInAs heterostructure nanowires. First, we performed selective etching experiments in order to locate the barriers. Second, the barriers were probed electrically by performing thermally activated...... spectroscopy measurements on InAs based nanowires include several topics. Firstly, we use polarized Raman spectroscopy for determining the crystal orientation of the nanowires based on conventional Raman selection rules. We studied the effect of the high power laser irradiation on the nanowire, and its...

  13. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    Energy Technology Data Exchange (ETDEWEB)

    Shweky, Itzhak [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Aharoni, Assaf [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Mokari, Taleb [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Rothenberg, Eli [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Nadler, Moshe [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Popov, Inna [Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Banin, Uri [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel) and Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel)]. E-mail: banin@chem.ch.huji.ac.il

    2006-07-15

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence.

  14. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    International Nuclear Information System (INIS)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  15. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  16. Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

    Directory of Open Access Journals (Sweden)

    Maronchuk I. E.

    2008-12-01

    Full Text Available Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

  17. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  18. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2016-11-15

    The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancement of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.

  19. Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

    2011-01-01

    In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

  20. Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

    Energy Technology Data Exchange (ETDEWEB)

    Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

    2011-12-28

    It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

  1. Coarsening process of high-density InAs quantum dots on Sb-irradiated GaAs

    Science.gov (United States)

    Kakuda, Naoki; Yamaguchi, Koichi

    2018-04-01

    High-density InAs quantum dots were grown on Sb-irradiated GaAs(001) by MBE. From InAs coverage and Sb irradiation time (SIT) dependences, the coarsening process of dots for long SIT (50 s) was classified according to four coverage regions. After the dot density rapidly increased and then reached the maximum (region I), the dot density decreased as the InAs coverage increased (region II). This decrease in dot density was attributed to quantum dot ripening. For a short SIT (7 s), the dot density was maintained without the ripening. In region III, the dot density was nearly constant value [(1.2–1.4) × 1011 cm‑2], despite the different SITs. In addition, the dot size was limited by stable {011} facets, and an inhomogeneous broadening of dot size distribution was improved. However, for a long SIT (50 s), small dots remained owing to the ripening. In region IV, coalescence occurred, and the density of giant dots slightly increased.

  2. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy; Um sistema de modulos NIM conjugados com entrada opcional por amplificador pHEMT para espectroscopia beta e gama

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Barbara; Lüdke, Everton, E-mail: barbarakonradmev@gmail.com, E-mail: eludke@smail.ufsm.br [Universidade Federal de Santa Maria (LAE/UFSM), RS (Brazil). Lab. de Astrofisica e Eletronica

    2014-07-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles.

  3. Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

    Science.gov (United States)

    Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

    2008-07-01

    This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

  4. Strong composition-dependent disorder in InAs1-xNx alloys

    International Nuclear Information System (INIS)

    Benaissa, H.; Zaoui, A.; Ferhat, M.

    2009-01-01

    We investigate the main causes of disorder in the InAs 1-x N x alloys (x = 0, 0.03125, 0.0625, 0.09375, 0.125, 0.25, 0.5, 0.75, 0.875, 0.90625, 0.9375, 0.96875 and 1). The calculation is based on the density-functional theory in the local-density approximation. We use a plane wave-expansion non-norm conserving ab initio Vanderbilt pseudopotentials. To avoid the difficulty of considering the huge number of atomic configurations, we use an appropriate strategy in which we consider four configurations for a given composition where the N atoms are not randomly distributed. We mainly show that the band gap decreases (increases) rapidly with increasing (decreasing) compositions of N. As a consequence the optical band gap bowing is found to be strong and composition dependent. The obtained compounds, from these alloys, may change from semi-conducting to metal (passing to a negative bowing) and could be useful for device applications, especially at certain composition.

  5. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

    International Nuclear Information System (INIS)

    Usman, Muhammad; O’Reilly, Eoin P; Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana; Klimeck, Gerhard

    2012-01-01

    III–V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In–Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response. (paper)

  6. Extreme Harmonic Generation in an InAs Spin-Orbit Qubit

    Science.gov (United States)

    Stehlik, J.; Schroer, M. D.; Maialle, M. Z.; Degani, M. H.; Petta, J. R.

    2014-03-01

    Strong spin-orbit materials have shown great promise in the field of quantum computation. Unlike conventional semiconductor materials, fast all-electrical control is achieved through electric dipole spin resonance (EDSR). In this work we explore EDSR in an InAs nanowire spin-orbit qubit. We observe signs of harmonic generation where spin flips occur at the resonance condition nhf = gμB B , where f is the applied frequency, B is the magnetic field, g is the g-factor and n is an integer. Near the interdot charge transition we observe harmonics up to n = 8, indicating extreme harmonic generation. At far detuning we only observe the n = 1 resonance. Further, we find odd/even structure in the harmonic response: odd harmonics result in an increase in the leakage current while even harmonics result in its suppression. Finally we observe oscillations in the resonant current as a function of detuning. The striking detuning dependence suggests that the harmonics may be caused by Landau-Zener transitions occurring due to the anti-crossing between the differing charge states. Numerical simulations of the system are qualitatively consistent with this picture. Funded by the Sloan and Packard Foundations, the NSF, and the Army Research Office. M.Z.M. and M.H.D. were funded by Fundação de Amparo à Pesquisa de São Paulo (Fapesp) and INCT-DISSE/CNPq, Brazil.

  7. Mid-Infrared Photoconductivity in Self-Assembled InAs Quantum Dots

    Science.gov (United States)

    Berryman, K. W.; Lyon, S. A.; Segev, Mordechai

    1997-03-01

    Observations of mid-infrared photoconductivity in self-assembled InAs quantum dots are observed. The dots, which self-assemble into squat pyramidal shapes approximately 10 nm on a side and 2-3 nm high, are grown using standard molecular beam epitaxy techniques and coherently strained in a matrix of Al_0.3Ga_0.7As which has been grown on a GaAs substrate. Using a variety of cladding structures and dots doped with electrons, normal incidence photoconductivity has been measured at a range of wavelengths in the mid-infrared. Observations at different sample temperatures and applied bias allows discrimination and explanation of different tranistion processes, including excitation of carriers from the ground state of the dots into both excited states and the continuum. Photoluminescence and electroluminescence experiments are in good agreement with the observed optical transitions. The large optical response of these quantum dot samples suggests possible future use as novel mid-infrared detectors. Infrared photoconductivity is investigated for several different dot structures, and the possibility of further optimization of self-assembled quantum dots for both mid-infrared detection and emission will be discussed.

  8. An Integrated Nonlinear Analysis library - (INA) for solar system plasma turbulence

    Science.gov (United States)

    Munteanu, Costel; Kovacs, Peter; Echim, Marius; Koppan, Andras

    2014-05-01

    We present an integrated software library dedicated to the analysis of time series recorded in space and adapted to investigate turbulence, intermittency and multifractals. The library is written in MATLAB and provides a graphical user interface (GUI) customized for the analysis of space physics data available online like: Coordinated Data Analysis Web (CDAWeb), Automated Multi Dataset Analysis system (AMDA), Planetary Science Archive (PSA), World Data Center Kyoto (WDC), Ulysses Final Archive (UFA) and Cluster Active Archive (CAA). Three main modules are already implemented in INA : the Power Spectral Density (PSD) Analysis, the Wavelet and Intemittency Analysis and the Probability Density Functions (PDF) analysis.The layered structure of the software allows the user to easily switch between different modules/methods while retaining the same time interval for the analysis. The wavelet analysis module includes algorithms to compute and analyse the PSD, the Scalogram, the Local Intermittency Measure (LIM) or the Flatness parameter. The PDF analysis module includes algorithms for computing the PDFs for a range of scales and parameters fully customizable by the user; it also computes the Flatness parameter and enables fast comparison with standard PDF profiles like, for instance, the Gaussian PDF. The library has been already tested on Cluster and Venus Express data and we will show relevant examples. Research supported by the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement no 313038/STORM, and a grant of the Romanian Ministry of National Education, CNCS UEFISCDI, project number PN-II-ID PCE-2012-4-0418.

  9. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy

    International Nuclear Information System (INIS)

    Konrad, Barbara; Lüdke, Everton

    2014-01-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles

  10. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure for improving DC and RF characteristics

    Science.gov (United States)

    Razavi, S. M.; Zahiri, S. H.; Hosseini, S. E.

    2017-04-01

    In this study, a gallium nitride (GaN) high electron mobility transistor (HEMT) with recessed insulator and barrier is reported. In the proposed structure, insulator is recessed into the barrier at the drain side and barrier is recessed into the buffer layer at the source side. We study important device characteristics such as electric field, breakdown voltage, drain current, maximum output power density, gate-drain capacitance, short channel effects and DC transconductance using two-dimensional and two-carrier device simulator. Recessed insulator in the drain side of the proposed structure reduces maximum electric field in the channel and therefore increases the breakdown voltage and maximum output power density compared to the conventional counterpart. Also, gate-drain capacitance value in the proposed structure is less than that of the conventional structure. Overall, the proposed structure reduces short channel effects. Because of the recessed regions at both the source and the drain sides, the average barrier thickness of the proposed structure is not changed. Thus, the drain current of the proposed structure is almost equivalent to that of the conventional transistor. In this work, length ( L r) and thickness ( T r) of the recessed region of the barrier at the source side are the same as those of the insulator at the drain side.

  11. Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si

    Science.gov (United States)

    Kumar, Sandeep; Remesh, Nayana; Dolmanan, S. B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, Digbijoy N.

    2017-11-01

    We report on the characterization of the interfaces of Al2O3/InAlN/GaN HEMT structure grown on 200 mm diameter silicon using conductance dispersion technique. Irreversible threshold voltage (VTH) shift of up to +∼2.5 V was observed due to the gate stress induced activation of acceptor states. Further, frequency dependent VTH shift during capacitance voltage measurements were also recorded due to the presence of slow traps at InAlN/GaN interface. The conductance dispersion indicated the presence of acceptor traps of the order of ∼4 × 1012 to 7 × 1013 cm-2 eV-1 with a time constant of ∼10 to 350 μs at the InAlN/GaN interface. Trap density at the Al2O3/InAlN was found to be in similar range but with a time constant of ∼2 μs. The presence of high density of traps at InAlN/GaN interface is attributed to the unavoidable growth interruption before the start of InAlN growth.

  12. Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

    Energy Technology Data Exchange (ETDEWEB)

    Pu Yan; Pang Lei; Wang Liang; Chen Xiaojuan; Li Chengzhan; Liu Xinyu, E-mail: puyan_66721@hotmail.co [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2009-12-15

    The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in large-signal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract R{sub g}. In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S {sub 11} and S {sub 22} is improved, and f{sub T} and f{sub max} can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz. (semiconductor devices)

  13. Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

    Science.gov (United States)

    Freeman, Jon C.; Mueller, Wolfgang

    2008-01-01

    Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

  14. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    International Nuclear Information System (INIS)

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  15. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  16. Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

    2009-06-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  17. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy

    Science.gov (United States)

    Averett, K. L.; Wu, X.; Koch, M. W.; Wicks, G. W.

    2003-04-01

    Two advances in InAs-based bipolar transistor technology are reported. Metamorphic InAs bipolar junction transistors (BJTs), grown on semi-insulating GaAs substrates, are reported for the first time, showing current gains comparable to similar structures grown homoepitaxially on InAs substrates. Measurements by atomic force microscopy report root-mean-square surface roughness as low as 0.661 nm, for a metamorphic BJT structure with a 5 μm thick InAs buffer. The quality of the epitaxial structure was investigated as a function of the buffer layer thickness, by measuring the reverse-leakage current density of metamorphic BJTs of 1, 2, and 5 μm InAs buffer layers, showing improved electrical characteristics with increasing buffer layer thickness. A second technological advance is also reported, concerning the development of a heterojunction bipolar transistor (HBT), with a strained, pseudomorphic InAs 1- yP y ternary for the wide-gap emitter. The common emitter current gain of a control BJT device was measured at β=110, and the HBT device, of identical doping structure achieved β=180.

  18. 99mTc-MIBI/123I-Na subtraction scanning for localized parathyroid adenoma in patients with asymptomatic/mild primary hyperparathyroidism

    International Nuclear Information System (INIS)

    Tanaka, Yuji; Funahashi, Hiroomi; Imai, Tsuneo

    1996-01-01

    Primary hyperparathyroidism is most commonly detected as a mild elevation of the serum calcium concentration. In the present study, the utility of 99m Tc-methoxyisobutylisonitrile (MIBI) imaging before initial surgery was evaluated for localizing abnormal parathyroid glands in patients with asymptomatic and mild primary hyperparathyroidism. The results were compared with those of thallium-technetium subtraction scanning (TTSS). 99m Tc-MIBI/ 123 I-Na subtraction scanning was performed in 11 patients, and TTSS was performed in 10 of them. The sensitivity was 100% and the positive predictive value was 92% for 99m Tc-MIBI/ 123 I-Na, while the sensitivity was 50% and the positive predictive value was 100% for TTSS. The smallest gland detected weighed 85 mg in 99m Tc-MIBI/ 123 I-Na, and 570 mg in TTSS. There was a difference between the median weight of adenomas which were detected by 99m Tc-MIBI/ 123 I-Na (754 mg), and those which were detected by TTSS (1,195 mg). These results suggest that TTSS parathyroid scintigraphy could give way to 99m Tc-MIBI/ 123 I-Na parathyroid scintigraphy for improved detection of low-weight abnormal parathyroid glands. (author)

  19. Dampak Biaya Laboratorium Terhadap Kesenjangan Tarif INA-CBGs dan Biaya Riil Diagnosis Leukemia

    Directory of Open Access Journals (Sweden)

    Diah Indriani

    2013-05-01

    Full Text Available Selama penerapan Diagnosis Related Group di Rumah Sakit Umum Pusat (RSUP Dr. Sardjito, terjadi kesenjangan tarif biaya riil pelayanan kesehatan dengan tarif Indonesia Case Base Groups (INA-CBGs. Penyebab terbesar kesenjangan tarif tersebut adalah pelayanan obat dan penggunaan sumber daya laboratorium yang tidak efisien. Biaya pelayanan penunjang medis untuk pasien leukemia limfoblastik akut adalah sekitar 23,8% dari total biaya pelayanan kesehatan. Penelitian ini bertujuan untuk mengetahui tingkat efisiensi penggunan sumber daya laboratorium dan pengaruh terhadap kesenjangan tarif. Penelitian ini menganalisis semua rekam medis dan data biaya pelayanan laboratorium pasien leukemia limfoblastik akut tahun 2009 _ 2010 di RSUP Dr. Sardjito Yogyakarta. Pemeriksaan kimia klinik menunjukkan pola pasien yang semakin parah, proporsi biaya pemeriksaan kimia klinik semakin rendah. Kondisi ini juga terjadi pada pemeriksaan radiologi, urine dan tinja rutin. Sementara pada pemeriksaan hematologi, mikrobiologi, dan imunologi/serologi menunjukkan pola semakin parah pasien maka semakin tinggi proporsi biaya pemeriksaan. Analisis regresi menemukan pemeriksaan kimia klinik meliputi mikrobiologi darah, ureum, magnesium, creatine kinase MB (blood menyebabkan kesenjangan tarif semakin meningkat atau rumah sakit semakin dirugikan. Model regresi linier ini mempunyai nilai R2 sebesar 0,834 dengan nilai F = 84,475 (P < 0,05. Ketidakefisienan penggunaan sumber daya laboratorium pada pemeriksaan kimia klinik terdapat pada kelompok pasien tingkat keparahan ringan. Problems occurred during the implementation of Diagnosis Related Group in Sardjito Hospital Yogyakarta. There was gap price between the real cost of health care and Indonesia Case Base Groups (INA-CBGs cost. The cause of the gap price was drug delivery and use of laboratory resources inefficiently. Cost of medical support services for acute lymphoblactic leukemia patients about 23.8% of the total cost of health

  20. Strategic planning of INA-CORS development for public service and tectonic deformation study

    Science.gov (United States)

    Syetiawan, Agung; Gaol, Yustisi Ardhitasari Lumban; Safi'i, Ayu Nur

    2017-07-01

    GPS technology can be applied for surveying, mapping and research purposes. The simplicity of GPS technology for positioning make it become the first choice for survey compared with another positioning method. GPS can measure a position with various accuracy level based on the measurement method. In order to facilitate the GPS positioning, many organizations are establishing permanent GPS station. National Geodetic Survey (NGS) called it as Continuously Operating Reference Stations (CORS). Those devices continuously collect and record GPS data to be used by users. CORS has been built by several government agencies for particular purposes and scattered throughout Indonesia. Geospatial Information Agency (BIG) as a geospatial information providers begin to compile a grand design of Indonesia CORS (INA-CORS) that can be used for public service such as Real Time Kinematic (RTK), RINEX data request, or post-processing service and for tectonic deformation study to determine the deformation models of Indonesia and to evaluate the national geospatial reference system. This study aims to review the ideal location to develop CORS network distribution. The method was used is to perform spatial analysis on the data distribution of BIG and BPN CORS overlayed with Seismotectonic Map of Indonesia and land cover. The ideal condition to be achieved is that CORS will be available on each radius of 50 km. The result showed that CORS distribution in Java and Nusa Tenggara are already tight while on Sumatra, Celebes and Moluccas are still need to be more tighten. Meanwhile, the development of CORS in Papua will encounter obstacles toward road access and networking. This analysis result can be used as consideration for determining the priorities of CORS development in Indonesia.

  1. Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

    Science.gov (United States)

    Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

    2017-11-01

    Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

  2. Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    International Nuclear Information System (INIS)

    Seredin, P. V.; Domashevskaya, E. P.; Lukin, A. N.; Arsent'ev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

    2008-01-01

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

  3. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-06-03

    We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

  4. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    International Nuclear Information System (INIS)

    Alonso-Gonzalez, Pablo; Gonzalez, Luisa; Gonzalez, Yolanda; Fuster, David; Fernandez-Martinez, Ivan; Martin-Sanchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates

  5. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Alonso-Gonzalez, Pablo [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Gonzalez, Luisa [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Gonzalez, Yolanda [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Fuster, David [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Fernandez-Martinez, Ivan [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Martin-Sanchez, Javier [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Abelmann, Leon [SMI, MESA Institute of Nanotechnology, University of Twente, PO Box 217, 7500 AE, Enschede (Netherlands)

    2007-09-05

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.

  6. Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

    Energy Technology Data Exchange (ETDEWEB)

    Xie, H. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287-6106 (United States); Prioli, R. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Departamento de Física, Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro 22452-900 RJ (Brazil); Fischer, A. M.; Ponce, F. A., E-mail: ponce@asu.edu [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Kawabata, R. M. S.; Pinto, L. D.; Souza, P. L. [LabSem, CETUC, Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro 22452-900 RJ (Brazil); Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Jakomin, R. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Campus de Xerem, UFRJ, Duque de Caxias-RJ (Brazil); Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Instituto de Física, UFRJ, Rio de Janeiro-RJ (Brazil)

    2016-07-21

    The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

  7. Deep Centers at the Interface in In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Domashevskaya, E. P. [Voronezh State University of Engineering Technologies (Russian Federation); Mikhailyuk, E. A. [Branch of the National Research Technological University MISiS, Stary Oskol Technological Institute (Russian Federation); Prokopova, T. V. [Military Training and Research Center “Zhukovskii and Gagarin Air Force Academy” (Russian Federation); Bezryadin, N. N., E-mail: gazon1978@yandex.ru [Voronezh State University of Engineering Technologies (Russian Federation)

    2016-03-15

    The methods of admittance, I–V, and C–V characteristics are used to investigate In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs heterostructures obtained by the technologies of quasi-closed volume and deposition. The spectrum of the distribution of local energy levels at the interface is established. A new acceptor center with an energy of 0.36 eV alongside the known donor level with an energy of 0.5 eV is found by the method of admittance. The acceptor-center concentration N{sub t} depends on the method of fabrication and technological modes. The kinetics of generation–recombination processes in the temperature range of 70–400 K does not affect the insulating properties of the In{sub 2}Te{sub 3} or In{sub 2x}Ga{sub 2(1–x)}Te{sub 3} (x ≈ 0.65) dielectric layer; therefore, the possibility of their use as heterostructures for field-effect transistors is demonstrated.

  8. Dengue virus photo-inactivated in presence of 1,5-iodonaphthylazide (INA) or AMT, a psoralen compound (4′-aminomethyl-trioxsalen) is highly immunogenic in mice

    Science.gov (United States)

    Raviprakash, Kanakatte; Sun, Peifang; Raviv, Yossef; Luke, Thomas; Martin, Nicholas; Kochel, Tadeusz

    2013-01-01

    Two novel methods of dengue virus inactivation using iodonaphthyl azide (INA) and aminomethyl trioxsalen (AMT) were compared with traditional virus inactivation by formaldehyde. The AMT inactivated dengue-2 virus retained its binding to a panel of 5 monoclonal antibodies specific for dengue-2 envelope protein, whereas inactivation by formaldehyde and INA led to 30–50% decrease in binding. All three inactivated viruses elicited high level virus neutralizing antibodies in vaccinated mice. However, only mice vaccinated with AMT inactivated virus mounted T cell responses similar to live, uninactivated virus. PMID:23835446

  9. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

    International Nuclear Information System (INIS)

    Peleshchak, R. M.; Guba, S. K.; Kuzyk, O. V.; Kurilo, I. V.; Dankiv, O. O.

    2013-01-01

    The distribution of hydrostatic strains in Bi 3+ -doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi → As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

  10. Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.

    Science.gov (United States)

    Nylund, Gustav; Storm, Kristian; Lehmann, Sebastian; Capasso, Federico; Samuelson, Lars

    2016-02-10

    III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.

  11. Simple synthesis of ultra-high quality In2S3 thin films on InAs substrates

    Science.gov (United States)

    Sim, Yumin; Kim, Jinbae; Seong, Maeng-Je

    We report a simple and reliable technique to synthesize high-quality In2S3 films on device-ready substrate, such as InAs substrates for useful device applications, by using thermal sulfurization in a hot-wall tube furnace. The crystal structure and composition were studied by using X-ray diffraction and energy dispersive X-ray, and the results confirmed that the synthesized In2S3 films were cubic β-In2S or tetragonal β-In2S3, depending on growth conditions. Morphology, vibrational modes, and optical properties were investigated by using field emission scanning electron microscopy, Raman, and photoluminescence spectroscopy, and the results indicated that the In2S3 films are remarkable crystal quality with substantial efficiency in photoluminescence. Especially, by optimizing the growth conditions, we have grown an extremely high-quality tetragonal β-In2S3 thin film firmly remained on the InAs substrate, for the first time. National Research Foundation of Korea.

  12. Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

    Energy Technology Data Exchange (ETDEWEB)

    Sortica, Mauricio A.; Canut, Bruno; Chauvin, Nicolas [Institut des Nanotechnologies de Lyon INL-UMR5270, INSA - Lyon, CNRS, 7 av. Jean Capelle, 69621, Villeurbanne (France); Hatori, Masahiro; Dias, Johnny F. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul IF-UFRGS, av. Bento Goncalves 9500, 91501-970, Porto Alegre - RS (Brazil); Marty, Olivier [Institut des Nanotechnologies de Lyon INL-UMR5270, Universite Claude Bernard Lyon 1, 8 rue Andre-Marie Ampere, 69622, Villeurbanne (France)

    2015-12-15

    Si (100) wafers were implanted at 500 C with 250 keV As ions and 350 keV In ions in this order. The implantations were carried out with three different fluences, namely 1 x 10{sup 16}, 2 x 10{sup 16}, and 5 x 10{sup 16} cm{sup -2}. The samples were annealed with rapid thermal annealing (RTA) for 30 s at temperatures ranging from 800 up to 1000 C. Different techniques like photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) were employed to characterize the samples. Finally, scanning and transmission electron microscopy (SEM and TEM, respectively) provided further structural information of the InAs nanoclusters. The results indicate that InAs nanoprecipitates are formed after RTA treatment. Moreover, a broad photoluminescence peak was observed in all samples submitted to RTA. RBS results reveal that losses of implanted ions due to diffusion processes can be minimized through the use of RTA, depending of the fluence of ion implantation. Finally, the present results suggest that the photoluminescence yield depends on the degree of the radiation damage induced in the Si matrix during the implantation process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Direct radiocarbon dates for Vindija G1 and Velika Pećina Late Pleistocene hominid remains

    Science.gov (United States)

    Smith, Fred H.; Trinkaus, Erik; Pettitt, Paul B.; Karavanić, Ivor; Paunović, Maja

    1999-01-01

    New accelerator mass spectrometry radiocarbon dates taken directly on human remains from the Late Pleistocene sites of Vindija and Velika Pećina in the Hrvatsko Zagorje of Croatia are presented. Hominid specimens from both sites have played critical roles in the development of current perspectives on modern human evolutionary emergence in Europe. Dates of ≈28 thousand years (ka) before the present (B.P.) and ≈29 ka B.P. for two specimens from Vindija G1 establish them as the most recent dated Neandertals in the Eurasian range of these archaic humans. The human frontal bone from Velika Pećina, generally considered one of the earliest representatives of modern humans in Europe, dated to ≈5 ka B.P., rendering it no longer pertinent to discussions of modern human origins. Apart from invalidating the only radiometrically based example of temporal overlap between late Neandertal and early modern human fossil remains from within any region of Europe, these dates raise the question of when early modern humans first dispersed into Europe and have implications for the nature and geographic patterning of biological and cultural interactions between these populations and the Neandertals. PMID:10535913

  14. The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

    Science.gov (United States)

    Ullah, A. R.; Joyce, H. J.; Tan, H. H.; Jagadish, C.; Micolich, A. P.

    2017-11-01

    We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

  15. MATLAB implementation of a dynamic clamp with bandwidth >125 KHz capable of generating INa at 37°C

    Science.gov (United States)

    Clausen, Chris; Valiunas, Virginijus; Brink, Peter R.; Cohen, Ira S.

    2012-01-01

    We describe the construction of a dynamic clamp with bandwidth >125 KHz that utilizes a high performance, yet low cost, standard home/office PC interfaced with a high-speed (16 bit) data acquisition module. High bandwidth is achieved by exploiting recently available software advances (code-generation technology, optimized real-time kernel). Dynamic-clamp programs are constructed using Simulink, a visual programming language. Blocks for computation of membrane currents are written in the high-level matlab language; no programming in C is required. The instrument can be used in single- or dual-cell configurations, with the capability to modify programs while experiments are in progress. We describe an algorithm for computing the fast transient Na+ current (INa) in real time, and test its accuracy and stability using rate constants appropriate for 37°C. We then construct a program capable of supplying three currents to a cell preparation: INa, the hyperpolarizing-activated inward pacemaker current (If), and an inward-rectifier K+ current (IK1). The program corrects for the IR drop due to electrode current flow, and also records all voltages and currents. We tested this program on dual patch-clamped HEK293 cells where the dynamic clamp controls a current-clamp amplifier and a voltage-clamp amplifier controls membrane potential, and current-clamped HEK293 cells where the dynamic clamp produces spontaneous pacing behavior exhibiting Na+ spikes in otherwise passive cells. PMID:23224681

  16. Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

    International Nuclear Information System (INIS)

    Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

    2013-01-01

    We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

  17. Self-assembled InAs quantum dots. Properties, modification and emission processes

    International Nuclear Information System (INIS)

    Schramm, A.

    2007-01-01

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  18. Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN x Layers

    Science.gov (United States)

    Tadjer, Marko J.; Anderson, Travis J.; Hobart, Karl D.; Mastro, Michael A.; Hite, Jennifer K.; Caldwell, Joshua D.; Picard, Yoosuf N.; Kub, Fritz J.; Eddy, Charles R.

    2010-11-01

    A comparative study of AlGaN/GaN high-electron-mobility transistor (HEMT) surface passivation using ex situ and in situ deposited SiN x is presented. Performing ex situ SiN x passivation increased the reverse gate leakage and off-state channel leakage by about three orders of magnitude. The in situ SiN x layer was characterized using transmission electron microscopy (TEM) and capacitance-voltage (CV) measurements. Photoluminescence (PL) spectra indicated a reduction of nonradiative recombination centers in in situ SiN x -passivated samples, indicating improved crystal quality. CV measurements indicated a reduction of surface state density as well, and thus better overall passivation using in situ SiN x . Electroluminescence (EL) images of the channel regions in AlGaN/GaN HEMT devices operating in forward blocking mode with up to 400 V drain bias demonstrated reduced channel emission profiles of in situ-passivated devices. Compared with a nonpassivated reference sample, the reduced EL emission profiles correlated with a reduced channel temperature on ex situ SiN x -passivated devices.

  19. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    International Nuclear Information System (INIS)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

    2012-01-01

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

    2012-01-15

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

    International Nuclear Information System (INIS)

    Faramehr, Soroush; Kalna, Karol; Igić, Petar

    2014-01-01

    A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V–4000 V for a source-to-drain spacing (L SD ) of 6 μm–32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance R S for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm 2 and 3.5 mΩ · cm 2 , respectively. Further improvement up to BV  = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of R S = 35.5 mΩ · cm 2 . The leakage current in the proposed devices stays in the range of ∼5 × 10 −9 mA mm −1 . (paper)

  2. Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

    2017-11-01

    In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

  3. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

    Science.gov (United States)

    Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

    2016-12-01

    The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

  4. Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

    Energy Technology Data Exchange (ETDEWEB)

    Hu Dongzhi

    2007-02-13

    The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

  5. Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

    Science.gov (United States)

    Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

    2018-02-01

    We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

  6. Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

    International Nuclear Information System (INIS)

    Hu Dongzhi

    2007-01-01

    The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

  7. BIAYA KLAIM INA CBGS DAN BIAYA RIIL PENYAKIT KATASTROPIK RAWAT INAP PESERTA JAMKESMAS DI RUMAH SAKIT STUDI DI 10 RUMAH SAKIT MILIK KEMENTERIAN KESEHATAN JANUARI–MARET 2012

    Directory of Open Access Journals (Sweden)

    Wasis Budiarto

    2013-08-01

    Full Text Available Latar belakang: Implementasi sistem INA-CBGs bagi pasien penyakit katastropik (jantung, kanker, stroke peserta Jamkesmas di rumah sakit, memberikan konsekuensi di satu pihak bahwa penyakit katastropik merupakan ancaman terhadap membengkaknya pembiayaan Jamkesmas di masa datang, sedangkan di pihak lain, rumah sakit merasakan bahwa biaya penggantian klaim INA CBGs lebih rendah dari tarif yang berlaku dirumah sakit. Tujuan: Tujuan penelitian ini untuk memperoleh gambaran biaya pengobatan penyakit katastropik dan perbandingan pembiayaan klaim berdasarkan INA-DRGs dengan biaya pengobatan riil penyakit katastropik dirumah sakit. Jenis penelitian adalah deskriptif menurut perspektif rumah sakit. Metode: Metode pengambilan data dilakukan secara retrospektif yang diambil dari penelusuran dokumen catatan medik pasien penyakit katastropik di 10 rumah sakit selama 3 bulan (Januari–Maret 2012. Analisis data dilakukan secara deskriptif. Hasil: Hasil penelitian menunjukkan bahwa pasien Jamkesmas yang dirawat dengan kasus katastropik terdiri dari penyakit jantung sebesar37,11%, penyakit kanker 23,54% dan sisanya sebesar 39,35% pasien penyakit stroke. Kesimpulan: Biaya pengobatan rawat inap berdasarkan tarif rumah sakit kelas A jauh lebih besar dibandingkan kelas B dan RS Khusus, biaya klaim berdasarkan INA-CBGs jauh lebih besar di rumah sakit kelas A dibanding kelas B dan RS Khusus. Komponen biaya yang banyak peruntukannya adalah biaya akomodasi, tindakan ruangan, pemeriksaan laboratorium, tindakan intervensi nonbedah untuk jantung, tindakan operasi untuk kanker serta biaya obat-obatan. Biaya penggantian klaim penyakit katastropik berdasarkan INA CBGs lebih besar dibandingkan dengan biaya riil berdasarkan tarif rumah sakit, sehingga untuk penyakit katastropik rumah sakit tidak merugi. Untuk itu pelaksanaan kebijakan rujukan berjenjang bagi peserta Jamkesmas harus diawasi secara ketat sehingga pelayanan kesehatan bagi penduduk miskin menjadi lebih terjamin

  8. International Active Surveillance Study of Women Taking Oral Contraceptives (INAS-OC Study

    Directory of Open Access Journals (Sweden)

    Assmann Anita

    2009-11-01

    Full Text Available Abstract Background A 24-day regimen of contraceptive doses of drospirenone and ethinylestradiol (DRSP/EE 24d was recently launched. This regimen has properties which may be beneficial for certain user populations (e.g., women suffering from premenstrual dysphoric disorder or acne. However, it is unknown whether this extended regimen has an impact on the cardiovascular risk associated with the use of oral contraceptives (OCs. The INternational Active Surveillance study of women taking Oral Contraceptives (INAS-OC is designed to investigate the short- and long-term safety of the new regimen in a population which is representative for the typical user of oral contraceptives. Methods/Design A large, prospective, controlled, non-interventional, long-term cohort study with active surveillance of the study participants has been chosen to ensure reliable and valid results. More than 2,000 gynecologists in the US and 5 European countries (Austria, Germany, Italy, Poland, and Sweden will recruit more than 80,000 OC users. The two to five year follow-up of these women will result in at least 220,000 documented women-years. The main clinical outcomes of interest for the follow-up are deep venous thrombosis, pulmonary embolism, acute myocardial infarction and cerebrovascular accidents. Secondary objectives are general safety, effectiveness and drug utilization pattern of DRSP/EE 24d, return to fertility after stop of OC use, as well as the baseline risk for users of individual OC formulations. Because of the non-interference character of this study, potential participants (first-time users or switchers are informed about the study only after the decision regarding prescription of a new OC. There are no specific medical inclusion or exclusion criteria. Study participation is voluntary and a written informed consent is required. After the baseline questionnaire, follow-up questionnaires will be mailed to the participants every 6 months for up to 5 years after

  9. Radar Satellite Imagery and Automatic Detection of Water Bodies : Radarski satelitski snimci i automatsko otkrivanje vodenih površina

    Directory of Open Access Journals (Sweden)

    Klemen Čotar

    2016-12-01

    Full Text Available System for mapping of water bodies in Slovenia and its immediate neighbourhood with Sentinel-1 radar satellites have implemented. Algorithms automatically detect presence of new data in the archive, download the data, analyse it, write the results, and upload them to a web portal. New acquisitions are currently available every six days, but this time will be halved when the second Sentinel-1 starts delivering the data. : Implementiran je sistem za kartiranje vodenih površina u Sloveniji i u neposrednoj blizini sa Sentinel-1 radarskim satelitima. Algoritmi automatski otkrivaju prisutnost novih podataka u arhivu, preuzimaju podatake, analiziraju, objavljuju rezultate, te ih prenose na web-portal. Nove akvizicije su trenutno dostupne svakih šest dana, ali ovaj puta će vrijeme biti prepolovljeno, kada drugi Sentinel-1 počne sa isporukom podataka.

  10. Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties

    Directory of Open Access Journals (Sweden)

    Liang BL

    2007-01-01

    Full Text Available AbstractInAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100, GaAs (100 with a 2° misorientation angle towards [01−1], and GaAs (n11B (n = 9, 7, 5 substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100, which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.

  11. Atomic scale characterization of ion-induced amorphization of GaAs and InAs using PAC spectroscopy

    International Nuclear Information System (INIS)

    Dogra, R.; Byrne, A.P.; Ridgway, M.C.

    2005-01-01

    Single crystals of GaAs (100) and InAs (100) were implanted with 1-7 MeV 74 Ge ions over a wide dose range at liquid nitrogen temperature. The implanted substrates were investigated with respect to the damage production by means of perturbed angular correlation spectroscopy based upon hyperfine interactions of nuclear electromagnetic moments of probe nuclei with extra-nuclear fields. The perturbed angular correlation measurements were performed at room temperature utilizing the 111 In/Cd radioisotope probe nuclei. The crystalline, disordered and amorphous probe environments were identified from the measurements. The defect production is described within the framework of different amorphization models. (author). 6 refs., 2 figs

  12. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

    International Nuclear Information System (INIS)

    Skiba-Szymanska, Joanna; Ward, Martin B; Ellis, David J P; Shields, Andrew J; Jamil, Ayesha; Farrer, Ian; Nicoll, Christine A; Griffiths, Jonathan P; Anderson, David; Jones, Geb A C; Ritchie, David A

    2011-01-01

    We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 μeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.

  13. Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Arrabal, R., E-mail: raquel.gonzalez.arrabal@upm.e [Instituto de Fusion Nuclear, ETSII, Universidad Politecnica de Madrid (UPM) C/ Jose Gutierrez Abascal, 2, E-28006 Madrid (Spain); Redondo-Cubero, A. [Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gonzalez, Y.; Gonzalez, L.; Martin-Gonzalez, M.S. [Instituto de Microelectronica de Madrid CSIC C/ Isaac Newton, 8. Tres Cantos, E-28760 Madrid (Spain)

    2011-04-15

    The lattice order degree and the strain in as-grown, Mn-implanted and post-implanted annealed InAs thin films were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements.

  14. Capacitance estimation for InAs Tunnel FETs by means of full-quantum k · p simulation

    Science.gov (United States)

    Gnani, E.; Baravelli, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.

    2015-06-01

    We report for the first time a quantum mechanical simulation study of gate capacitance components in aggressively scaled InAs Nanowire Tunnel Field-Effect Transistors. It will be shown that the gate-drain capacitance exhibits the same functional dependence over the whole Vgs range as the total gate capacitance, albeit with smaller values. However, as opposed to the previous capacitance estimations provided by semiclassical TCAD tools, we find that the gate capacitance exhibits a non-monotonic behavior vs. gate voltage, with plateaus and bumps related with energy quantization and subband formation determined by the device cross-sectional size, as well as with the position of channel-conduction subbands relative to the Fermi level in the drain contact. From this point of view, semiclassical TCAD tools seem to be inaccurate for capacitance estimation in aggressively-scaled TFET devices.

  15. Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

    Science.gov (United States)

    Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

    2017-10-01

    NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

  16. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

    Science.gov (United States)

    Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

    2018-03-01

    Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

  17. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

    Science.gov (United States)

    Panda, D. K.; Lenka, T. R.

    2017-06-01

    An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

  18. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tarasova, E. A.; Obolenskaya, E. S., E-mail: obolensk@rf.unn.ru; Hananova, A. V.; Obolensky, S. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Zemliakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Nezhenzev, A. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Saharov, A. V.; Zazul’nokov, A. F.; Lundin, V. V.; Zavarin, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Medvedev, G. V. [JSC RPE Salut (Russian Federation)

    2016-12-15

    The sensitivity of classical n{sup +}/n{sup –} GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

  19. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    International Nuclear Information System (INIS)

    Tarasova, E. A.; Obolenskaya, E. S.; Hananova, A. V.; Obolensky, S. V.; Zemliakov, V. E.; Egorkin, V. I.; Nezhenzev, A. V.; Saharov, A. V.; Zazul’nokov, A. F.; Lundin, V. V.; Zavarin, E. E.; Medvedev, G. V.

    2016-01-01

    The sensitivity of classical n + /n – GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

  20. Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

    Science.gov (United States)

    Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

    2018-04-01

    This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

  1. High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT

    Science.gov (United States)

    Adak, Sarosij; Sarkar, Arghyadeep; Swain, Sanjit; Pardeshi, Hemant; Pati, Sudhansu Kumar; Sarkar, Chandan Kumar

    2014-11-01

    In the present work, we propose and perform extensive simulation study of the novel device structure having a p-GaN back barrier layer inserted in the conventional AlInN/AlN/GaN Gate-Recessed Enhancement-Mode HEMT device for reducing the short channel effects, gate leakage and enhancing the frequency performance. The influence of the p-GaN back barrier layer on the device performance of the newly proposed structure is done using 2D Sentaurus TCAD simulations. The simulations use Drift-Diffusion (DD) model, Masetti and Canali model, which are calibrated/validated with the previously published experimental results. Simulation are done to analyze the transfer characteristics, transconductance (gm), Gate leakage current (Ig), drain induced barrier lowering (DIBL), subthreshold slope (SS), threshold voltage (Vth), On-current Off-current ratio (Ion/Ioff), gate capacitance (Cgg) and cut off frequency (fT) of the proposed device. A comparison is done between the device without back barrier layer and the proposed device with p-GaN back barrier layer. Use of p-GaN back barrier layer helps to achieve a higher positive Vth due to the depletion effect, reduced Ig, reduced DIBL, prevents degradation of SS and helps to increase the fT. Very impressive fT up to 123 GHz, as compared to 70 GHz for the device without back barrier. These results indicate that AlInN/AlN/GaN Gate-Recessed Enhancement-Mode HEMT structure with p-GaN back barrier is a promising candidate for microwave and switching application.

  2. Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*

    International Nuclear Information System (INIS)

    Lefebvre, Eric; Moschetti, Giuseppe; Malmkvist, Mikael; Grahn, Jan; Desplanque, Ludovic; Wallart, Xavier

    2014-01-01

    The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiN x -film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have been fabricated simultaneously on the same chip for fair comparison. Optical observations and electrical measurements over four and half years demonstrated the physical stability provided by this extra-coverage. The electrical measurements also revealed that the induced deposition of the probing pads and of the extrinsic part of the gates on SiN x slightly reduced the maximum drain current I D  (−9%) and the transconductance g m (−12%) to, respectively, 700 mA mm −1  and 1220 mS mm −1  for 2 × 20 µm 2  InAs/AlSb HEMTs with a 140 nm recessed gate. On the other hand, the gate-leakage current I G  was lowered by more than one order of magnitude, leading to a better pinch-off behavior and increased values of cut-off frequency f T (+4%) and maximum frequency of oscillation f max  (+36%) to, respectively, 230 GHz and 190 GHz at a drain voltage V DS  of 0.5 V. (paper)

  3. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  4. Solução concentrada de albumina eqüina na fluidoterapia em eqüinos com desidratação leve a moderada

    OpenAIRE

    Belli,C.B.; Michima,L.E.S.; Latorre,S.M.; Fernandes,W.R.

    2008-01-01

    Avaliou-se o efeito da solução concentrada de albumina eqüina diluída a 5% em solução fisiológica (SF) durante fluidoterapia em eqüinos, após indução de desidratação leve a moderada, utilizando-se cinco eqüinos adultos, sem alterações clínicas. Cada animal passou por dois protocolos de fluidoterapia: apenas com SF (metade sob pressão e metade em fluxo contínuo - grupo-controle); com solução de albumina eqüina e SF (apenas em fluxo contínuo - grupo experimental). Avaliaram-se peso, exame físic...

  5. Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire

    International Nuclear Information System (INIS)

    Saravanan, S.; John Peter, A.; Lee, Chang Woo

    2014-01-01

    Excitons confined in an InAs 1−x P x /InP (x=0.2) quantum well wire are studied in the presence of magnetic field strength. Numerical calculations are carried out using variational approach within the single band effective mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is investigated in the influence of magnetic field strength taking into account the geometrical confinement effect. The magnetic field induced optical band as a function of wire radius is investigated in the InAs 0.8 P 0.2 /InP quantum well wire. The valence-band anisotropy is included in our theoretical model by employing different hole masses in different spatial directions. The optical gain as a function of incident photon energy is computed in the presence of magnetic field strength. The corresponding 1.55 μm wavelength is achieved for 40 Å InAs 0.8 P 0.2 /InP quantum well wire. We hope that the results could be used for the potential applications in fiber optic communications. -- Highlights: • Magnetic field induced excitons confined in a InAs 1−x P x /InP (x=0.2) quantum well wire are studied. • The compressive strain is included throughout the calculations. • The energy difference of the ground and the first excited state is investigated in the presence of magnetic field strength. • The magnetic field induced optical band with the geometrical confinement is studied. • The optical gain with the photon energy is computed in the presence of magnetic field strength

  6. Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Oswald, Jiří; Pangrác, Jiří; Zíková, Markéta; Kubištová, Jana; Komninou, Ph.; Kioseoglou, J.; Kuldová, Karla; Hulicius, Eduard

    2013-01-01

    Roč. 114, č. 17 (2013), "174305-1"-"174305-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S; GA MŠk 7AMB12GR034; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : quantum dots * metal-organic vapor phase epitaxy * InAs * GaAs * GaAsSb Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  7. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    Vertical External Cavity Surface Emitting Lasers). 2)! Installation of a FTIR based temperature dependent reflectivity setup for characterizing VECSELs...and SESAMs (Semiconductor Saturable Absorber Mirrors). 3)! Demonstration of up to 6 Watts CW with InAs QD (Quantum Dot) VECSELs (1250 nm) and 15...AFRL and at other university collaborators such as the University of Arizona. 2.#Installation#of#a# FTIR #based#temperature#dependent#reflectivity

  8. Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

    International Nuclear Information System (INIS)

    Zhao, Z.M.; Hul'ko, O.; Kim, H.J.; Liu, J.; Shi, B.; Xie, Y.H.

    2005-01-01

    InAs self-assembled quantum dots (QDs) were grown on Si (001) substrates via molecular beam epitaxy. The size distribution and density of InAs QDs grown under different conditions were studied using plan-view transmission electron microscopy. Dot density was shown to strongly depend on arsenic beam equivalent pressure (BEP) ranging from 2.8x10 -5 to 1.2x10 -3 Pa. In contrast, dot density was nearly independent of substrate temperature from 295 to 410 deg. C under constant arsenic BEP, while broadening of size distribution was observed with increasing temperature. The mechanism accounting for some of the main features of the experimental observations is discussed. Finally, InAs quantum dots with optimized narrow size distribution and high density were grown at low arsenic BEP of 7.2 x10 -5 Pa and low temperature of 250 deg. C followed by annealing at arsenic BEP of 1.9 x10 -4 Pa and temperature of 410 deg. C

  9. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ju Young [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Laser-IT Research Center, Korea Photonics Technology Institute, GwangJu 500-779 (Korea, Republic of); Song, Jin Dong, E-mail: jdsong@kist.re.kr [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yang, Hae Suk, E-mail: hsyang@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2012-08-31

    In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of {approx} 0.5 {mu}m above which the structural and transport qualities of the film are considerably enhanced. The resultant 2.60-{mu}m-thick InSb layer, grown at the substrate temperature of 400 Degree-Sign C and under the Sb flux of 1.5 Multiplication-Sign 10{sup -6} Torr, shows the electron mobility as high as 67,890 cm{sup 2}/Vs. - Highlights: Black-Right-Pointing-Pointer InSb films are grown on GaAs substrate by molecular beam epitaxy. Black-Right-Pointing-Pointer Intermediate layer of InAs quantum dots is inserted at GaAs/InSb interface. Black-Right-Pointing-Pointer Structural and transport properties of InSb are enhanced with InAs quantum dots. Black-Right-Pointing-Pointer Electron mobility over 50,000 cm{sup 2}/Vs is achieved within 1-{mu}m thickness of InSb.

  10. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

    Science.gov (United States)

    Sharma, Nandlal; Reuter, Dirk

    2017-11-01

    Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

  11. Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 × 2-c(8 × 2)

    Science.gov (United States)

    de Padova, P.; Quaresima, C.; Perfetti, P.; Olivieri, B.; Richter, M. C.; Heckmann, O.; Zerrouki, M.; Pennesi, G.; Paoletti, A. M.; Rossi, G.; Hricovini, K.

    2006-03-01

    We investigated the electronic structure of ultra thin interface of organic titanium bis-phthalocyanine TiPc{2} deposited on InAs(001)(4× 2)c-(8× 2) clean surface, by means of high-resolution core-levels and valence band (VB) photoelectron spectroscopies. In4d, As3d, and C1s core levels were measured for different TiPc{2} thicknesses up to 1 monolayer. Surface core level shifts were found on both In4d and As3d core levels. These shifts originate from the interaction between 4× 2-c(8× 2) InAs reconstruction and organic molecules suggesting the presence of strong bounds. C1s core level exhibits a line shape attributed to the C-C and C-N bonds. The VB spectroscopy shows dramatic changes related to the interaction of the TiPc{2} molecule with the InAs related surface states.

  12. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  13. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

    Science.gov (United States)

    Li, Weiyi; Zhang, Zhili; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

    2017-07-01

    We proposed a novel AlGaN/GaN enhancement-mode (E-mode) high electron mobility transistor (HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs (from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field. Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767).

  14. Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

    Directory of Open Access Journals (Sweden)

    P. Murugapandiyan

    2017-12-01

    Full Text Available A novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool. The remarkable potential device features such as heavily doped source/drain region, Al2O3 passivated device surface helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics. The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns of 1.9 × 1013 cm−2, the drain current density (Ids of 2.1 A/mm, the transconductance (gm of 800 mS/mm, the breakdown voltage (VBR of 40 V, the current gain cut-off frequency (ft of 221 GHz and the power gain cut-off frequency (fmax of 290 GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high power millimeter wave applications.

  15. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Henegar, A.J., E-mail: henegar1@umbc.edu; Gougousi, T., E-mail: gougousi@umbc.edu

    2016-12-30

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and TiO{sub 2} is compared. Al{sub 2}O{sub 3} if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al{sub 2}O{sub 3} ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al{sub 2}O{sub 3} limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al{sub 2}O{sub 3} and TiO{sub 2}, using H{sub 2}O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al{sub 2}O{sub 3} ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO{sub 2} and the native oxides continues well after the surface has been covered with 2 nm of TiO{sub 2}. This difference is traced to the superior properties of Al{sub 2}O{sub 3} as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to

  16. GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

    Science.gov (United States)

    Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2017-04-01

    We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω1, ω2, and ω3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω1 - ω2 = ω2 - ω3) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω1 and ω2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω3 (= 2ω2 - ω1) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.

  17. Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire.

    Science.gov (United States)

    Wang, Ji-Yin; Huang, Shaoyun; Huang, Guang-Yao; Pan, Dong; Zhao, Jianhua; Xu, H Q

    2017-07-12

    A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anticrossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point at which all three QDs are on resonance with the Fermi level of the reservoirs can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and superexchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states.

  18. Role of Bruton's tyrosine kinase (BTK) in growth and metastasis of INA6 myeloma cells

    International Nuclear Information System (INIS)

    Bam, R; Venkateshaiah, S U; Khan, S; Ling, W; Randal, S S; Li, X; Zhang, Q; Rhee, F van; Barlogie, B; Epstein, J; Yaccoby, S

    2014-01-01

    Bruton's tyrosine kinase (BTK) and the chemokine receptor CXCR4 are linked in various hematologic malignancies. The aim of the study was to understand the role of BTK in myeloma cell growth and metastasis using the stably BTK knockdown luciferase-expressing INA6 myeloma line. BTK knockdown had reduced adhesion to stroma and migration of myeloma cells toward stromal cell-derived factor-1. BTK knockdown had no effect on short-term in vitro growth of myeloma cells, although clonogenicity was inhibited and myeloma cell growth was promoted in coculture with osteoclasts. In severe combined immunodeficient-rab mice with contralaterally implanted pieces of bones, BTK knockdown in myeloma cells promoted their proliferation and growth in the primary bone but suppressed metastasis to the contralateral bone. BTK knockdown myeloma cells had altered the expression of genes associated with adhesion and proliferation and increased mammalian target of rapamycin signaling. In 176 paired clinical samples, BTK and CXCR4 expression was lower in myeloma cells purified from a focal lesion than from a random site. BTK expression in random-site samples was correlated with proportions of myeloma cells expressing cell surface CXCR4. Our findings highlight intratumoral heterogeneity of myeloma cells in the bone marrow microenvironment and suggest that BTK is involved in determining proliferative, quiescent or metastatic phenotypes of myeloma cells

  19. MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers: A review

    Science.gov (United States)

    Viswanath, A. Kasi; Hiruma, K.; Yazawa, M.; Ogawa, K.; Katsuyama, T.

    1994-02-01

    Nanometer-size quantum whiskers of InAs and GaAs were fabricated by low-pressure MOCVD. Time-integrated and time-resolved photoluminescence of GaAs wires of diameters 200, 100, 70, and 50 nm were studied. The temperature dependence of PL peak energy was found to follow the same variation as the bandgap of GaAs, and Varshni's theory was used to explain the temperature dependence. The main channel of radiative recombination was found to be due to free excitons. The nonuniformity in diameter and lattice phonon interactions were considered to understand the origin of the linewidth. From the time-resolved PL, the surface recombination lifetimes were measured directly. Surface recombination velocities were evaluated and were correlated to wire diameter. The quantum-size-dependent spatial part of the electronic wave function was thought to be responsible for the variation of surface recombination velocity with diameter. Surface treatment with sulphur reduced the surface depletion layer, as evidenced from the time-resolved and time-integrated spectra. The carrier lifetime was in picosecond time scales at 7 K and increased with temperature, thus confirming the quantum confinement effects. The polarization experiments revealed the one-dimensional nature of quantum whiskers.

  20. Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs

    Science.gov (United States)

    Swain, Sanjit Kumar; Adak, Sarosij; Pati, Sudhansu Kumar; Sarkar, Chandan Kumar

    2016-09-01

    In the present work, we have discussed the effect of InGaN back barrier on device performances of 100 nm gate length AlInN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) device and a wide comparison is made with respect to without considering the back barrier layer. The InGaN layer is introduced in the intension to raise the conduction band of GaN buffer with respect to GaN channel so that there is an improvement in the carrier confinement and at the same time witnessed excellent high frequency performance. The simulations are carried out using 2D Sentaurus TCAD simulator using Hydrodynamic mobility model by taking interface traps into consideration. Due to high value of two-dimensional electron gas (2DEG) density and mobility in AlInN/AlN/GaN MOS-HEMT device, higher drain current density is achieved. Simulation are carried out for different device parameters such as transfer characteristic (Id-Vg), transconductance factor (gm), drain induced barrier lowering (DIBL), Subthreshold slope (SS), conduction band energy, transconductance generation factor (gm/Id) and electric field. We have also examined the RF performance such as, total gate capacitance (Cgg), current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) of the proposed devices. Use of InGaN back barrier tends to increase threshold voltage towards more positive value, reduced DIBL, and improves SS and significant growth in (gm/Id) by 5.5%. It also helps to achieve better frequency response like substantial increase in fT up to 91 GHz with current gain 60 dB as compare to 67 GHz with 56 dB for the device without considering back barrier and increase in fmax up to 112 GHz with respect 94 GHz. These results evident that use of InGaN back barrier in such devices can be better solution for future analog and RF applications.

  1. Artificial intelligence expert systems with neural network machine learning may assist decision-making for extractions in orthodontic treatment planning.

    Science.gov (United States)

    Takada, Kenji

    2016-09-01

    New approach for the diagnosis of extractions with neural network machine learning. Seok-Ki Jung and Tae-Woo Kim. Am J Orthod Dentofacial Orthop 2016;149:127-33. Not reported. Mathematical modeling. Copyright © 2016 Elsevier Inc. All rights reserved.

  2. Time-resolved x-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

    International Nuclear Information System (INIS)

    Kakuda, Naoki; Yamaguchi, Koichi; Kaizu, Toshiyuki; Takahasi, Masamitu; Fujikawa, Seiji

    2010-01-01

    Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI. (author)

  3. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, J. L., E-mail: jlyu@semi.ac.cn [Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou (China); Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002 (China); Cheng, S. Y.; Lai, Y. F.; Zheng, Q. [Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou (China); Chen, Y. H., E-mail: yhchen@semi.ac.cn; Tang, C. G. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

    2015-01-07

    The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness of the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.

  4. Comparison between mini mental state examination (MMSE) and Montreal cognitive assessment Indonesian version (MoCA-Ina) as an early detection of cognitive impairments in post-stroke patients

    Science.gov (United States)

    Lestari, S.; Mistivani, I.; Rumende, C. M.; Kusumaningsih, W.

    2017-08-01

    Mild cognitive impairment (MCI) is defined as cognitive impairment that may never develop into dementia. Cognitive impairment is one long-term complication of a stroke. The Mini Mental State Examination (MMSE), which is commonly used as a screening tool for cognitive impairment, has a low sensitivity to detect cognitive impairment, especially MCI. Alternatively, the Montreal Cognitive Assessment Indonesian version (MoCA-Ina) has been reported to have a higher sensitivity than the MMSE. The aim of this study was to compare the proportion of MCI identified between the MMSE and MoCA-Ina in stroke patients. This was a cross-sectional study of stroke outpatients who attended the Polyclinic Neuromuscular Division, Rehabilitation Department, and Polyclinic Stroke, Neurology Department Cipto Mangunkusumo General Hospital, Jakarta. The proportion of MCI identified using the MMSE was 31.03% compared to 72.41% when using the MoCA-Ina. This difference was statistically significant (Fisher’s exact test, p = 0.033). The proportion of MCI in stroke patients was higher when using the MoCA-Ina compared to the MMSE. The MoCA-Ina should be used as an alternative in the early detection of MCI in stroke patients, especially those undergoing rehabilitation.

  5. Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

    Science.gov (United States)

    Conti, G.; Nemšák, S.; Kuo, C.-T.; Gehlmann, M.; Conlon, C.; Keqi, A.; Rattanachata, A.; Karslıoǧlu, O.; Mueller, J.; Sethian, J.; Bluhm, H.; Rault, J. E.; Rueff, J. P.; Fang, H.; Javey, A.; Fadley, C. S.

    2018-05-01

    Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO4 and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO2/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

  6. [Exposure to benzene and hematologic changes in workers at the Ina-Oki Drnisplast factory in Drnis].

    Science.gov (United States)

    Mikulandra, O; Cala, D; Marković, V; Zorić, A

    1993-12-01

    In the summer of 1984 workers in the "INA-OKI Drnisplast" factory frequently complained about headaches, weight loss and irregular menstrual cycles. According to the factory engineers that might have been due to an altered composition of the paints and glues that were used in the manufacturing process that year. Those had been found to lack specifications of chemical composition. Experts from the Institute for the Safety at Work from Zagreb were called in to perform measurements of organic solvents content in the workroom air. Benzene concentrations were found to be up to five times higher than the maximum permissible levels, those of toluene up to three times and of cyclohexane up to ten times higher. The polluted part of the factory was closed down, changes were introduced into the working process (use of paints was stopped, only glues without benzene content were allowed and proper ventilation was installed) and all the workers, twenty in all, received medical treatment. After three months the working process was resumed. In 1989 all the twenty workers underwent a control medical examination. All showed signs of recovery, both objective and subjective. Their blood tests values were within normal range. All the workers continued working, save one who retired in 1988 upon recommendation of a disability commission. The cause of disablement was occupational disease--benzene poisoning. On the basis of this experience emphasis is placed on the importance, in working with benzene, of complying with the Legislation on working capacity assessment for jobs requiring special working conditions and with the Safety at work act.

  7. ANALYSIS OF INA-CBG’S FARE AND GOVERNOR REGULATION FAREON SURGERY AT INPATIENT ROOM OF UNDATA REGIONAL PUBLIC HOSPITAL IN PALU

    Directory of Open Access Journals (Sweden)

    Muh. Ryman Napirah

    2016-03-01

    Full Text Available Aim: In order to determine the fares of surgery, there are two types of fares used by hospitals namely Indonesian Case Based Groups fare (INA-CBG s and Governor Regulation fare. This study aimed to identify and analyze both types of fares in orthopedic surgery, general, eyes, midwifery, mouth, ENT, urology at inpatient room of Undata Regional Public Hospital in Palu during year 2014. Method: This was a quantitative study with descriptive approach with 46 cases as the number of surgery. Data were collected through observation and analysis of secondary data were gotten from medical record, pharmaceutical installation of IBS/IDR, inpatient therapy room (Matahari, Aster, and Teratai pavilions and cashier of inpatient room in form of cost details and patient data from January to December 2014. Data Presentation was formed on tables, where the existing fares are grouped based on the component of each cost then summed and calculated the deviation between the two types of fares. Results: This study indicated that orthopedic surgery with deviation of Rp 11.311.365, general surgery with deviation of Rp 6.438.409, eyes surgery with deviation of Rp 45.173.741, midwifery surgery with deviation of Rp 6.645.765, oral surgery with deviation of Rp 6.105.659, and urological surgery with deviation of Rp. 3.809.959. Conclusion: It can be concluded that INA-CBG's fares are higher than Governor Regulation fares except orthopedic surgery, where the Governor Regulation faresare higher than INA-CBG’s fares.

  8. Adsorbed layers on (111)InAs faces in contact with In-As-Cl-H gas phase, and the possibility of phase transitions in the adsorbed layers

    Science.gov (United States)

    Chernov, A. A.; Ruzaikin, M. P.

    1981-04-01

    Adsorption of various species existing in the In-As-Cl-H CVD gaseous system on both InAs (111) faces is considered. Arsenic is supposed to be adsorbed in the form of triangles As 3 and tetrahedrons As 4, each of them occupying 3 atomic sites above In or As atoms on (111)In or (111)As, respectively. The system of polyatomic adsorption equations was used to find the coverages of the faces by various species. Admolecule-surface bond strengths are taken to be equal to the ones for the single bonds in molecules. Pauling electronegativities were used to find the effective charges of the atoms in the adsorption layer. Thus, the dipole moments of adsorbed molecules which arise are directed along the In-As bonds in the InAs lattice. With this geometry, the calculated electrostatic dipole-dipole attraction between InCl molecules forming a dense layer on (111)As exceeds 12 kcal/mol. Thus, condensation of the two-dimensional gas of adsorbed InCl molecules should be expected. Corresponding S-shape isotherms θ( P) are calculated for different As 3 vapor pressures, θ and P being the surface coverage and bulk vapor pressure of InCl. Intervals of {InCl 3}/{H 2} ratios at different temperatures where the two-dimensional condensation may occur, are presented for realistic CVD conditions. Two-dimensional condensation may result in sharp changes in kinetic coefficient and thus in autho-oscillations in growth rate and doping level creating periodic superstructures. Nucleation and CVD growth processes are discussed.

  9. Sociální služby a jejich dostupnost v Kraji Vysočina

    OpenAIRE

    Cihlářová, Petra

    2014-01-01

    The aim of this diploma thesis is the mapping and analyzing of the availability of social services in the Vysočina region. Closer attention is given to the district of Havlíčkův Brod focusing on the evaluation of the scope, structure and availability of social services in this region. First the thesis presents the theoretical bases of the social system, in particular the historical development of the welfare state and its typology. After that follows a research focused on the comparison of th...

  10. Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

    DEFF Research Database (Denmark)

    Chen, Miaoxiang Max; Kobashi, Kazufumi

    2012-01-01

    Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist...... of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting...

  11. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    International Nuclear Information System (INIS)

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-01-01

    Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. ISSN 2053-1591 R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠk(CZ) LO1603 Institutional support: RVO:68378271 Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.068, year: 2016

  13. MORPHOMETRIC PARAMETERS OF CRANIAL AND POSTCRANIAL SKELETON IN CAVE BEAR (Ursus spelaeus Rosenmüller & Heinroth, 1794 FROM LUKINA PEĆINA CAVE AND MEGARA IN BOSNIA AND HERZEGOVINA

    Directory of Open Access Journals (Sweden)

    Lada Lukić-Bilela

    2013-10-01

    Full Text Available During the investigation of the Lukina pećina cave (Srednja stijena, Ravan mountain the bone remains of the cave bear (Ursus spelaeus Rosenmüller & Heinroth, 1794 were found. We demonstrate for the first time the morphometric proportions of the cave bear from this locality. Our reasearch also included the new findings from the Megara cave (Bjelašnica. Analyzed morphometric proportions completely fell within the variation range of the Pleistocene cave bear population in Bosnia and Herzegovina, and the general variation range.Key words: Ursus spelaeus, Lukina pećina Cave, Megara, mandible, postcranial skeleton

  14. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Yang, Tao

    2017-06-01

    We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.

  15. Studies on the controlled growth of InAs nanostructures on scission surfaces; Untersuchungen zum kontrollierten Wachstum von InAs-Nanostrukturen auf Spaltflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, J.

    2006-01-15

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {l_brace}110{r_brace}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {l_brace}110{r_brace}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  16. Interfacial stress field generate by a biperiodic hexagonal network of misfit dislocations in a thin bicristal InAs/(111GaAs

    Directory of Open Access Journals (Sweden)

    Outtas, T.

    2004-04-01

    Full Text Available The elastic interactions generated by the presence of a biperiodic network, more precisely hexagonal, of misfit dislocations in the interfacing of a thin bicristal have been simulated numerically while considering an anisotropic elasticity for each crystal. The representation of the normal equi-stress near the dislocation segments and near of the triple node of hexagonal cell permits to detect the stress concentration zone du to elastic field for InAs/(111GaAs system, because, in the category of semiconductors, this is an ideal system which exhibit the presence of edge dislocations type parallels to the free surfaces by S.T.M.[1].

    Las interacciones elásticas generadas por la presencia de una red biperiódica, de dislocaciones en la interfase de un bicristal han sido simuladas numéricamente, considerando elasticidad anisotropa para cada cristal. La representación de las tensiones próximas a las dislocaciones y del nodo triple de la celda hexagonal, permite detectar la zona de concentración de tensiones debido al campo elástico para el sistema InAS/(111 GaAS, ya que, en los semiconductores, éste es un sistema ideal que muestra la presencia de dislocaciones paralelas a las superficies libres por S.T.M.[1].

  17. Application of emitter-sample hybrid terahertz time-domain spectroscopy to investigate temperature-dependent optical constants of doped InAs.

    Science.gov (United States)

    Han, J W; Kim, M S; Song, M S; Kang, B Y; Cho, B K; Lee, J S

    2017-03-20

    We investigate temperature-dependent carrier dynamics of InAs crystal by using reflection-type terahertz time-domain spectroscopy, particularly with a recently developed emitter-sample hybrid structure. We successfully obtain the optical conductivity in a terahertz frequency of bulk InAs whose dc conductivity is in the range of 100-150  Ω-1 cm-1. We find that both real and imaginary parts of the optical conductivity can be fit well with the simple Drude model, and the free-carrier density and the scattering rate obtained from the fit are in good agreement with corresponding values obtained by using other techniques, such as the Hall measurement and the dc-resistivity measurement. These results clearly demonstrate that the proposed technique of adopting the emitter-sample hybrid structure can be exploited to determine temperature-dependent optical constants in a reflection geometry and hence to investigate electrodynamics of bulk metallic systems.

  18. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  19. Determination of the burn-up in fuels of the MTR type by means of gamma spectroscopy with crystal of INa(Tl)

    International Nuclear Information System (INIS)

    Kestelman, A.J.

    1988-01-01

    One of the responsibilities of the Laboratory of Analysis by Neutronic Activation of the RA-6 reactor is to determine the burn-up in fuels of the MTR type. In order to gain experience, up to the arrival of the hyperpure Germanium detector (HPGe) to be used in normal operation, preliminary measurements with a crystal of INa(Tl) were made. The fuel elements used are originated in the RA-3 reactor, with a decay superior to the thirteen years. For this reason, the unique visible photoelectric peak is the one of Cs-137, owing to the low resolution of the INa(Tl). After preliminary measurements, the profiles of burn-up, rectified by attenuation, were measured. Once the efficiency of the detector was determined, the calculation of the burn-up was made; for the element No. 144, a value of 21.6 ± 2.9 g was obtained to be compared with the value 21.9 g which was the evaluation made by the operators. (Author) [es

  20. Ankyrin-G participates in INa remodeling in myocytes from the border zones of infarcted canine heart.

    Directory of Open Access Journals (Sweden)

    Wen Dun

    Full Text Available Cardiac Na channel remodeling provides a critical substrate for generation of reentrant arrhythmias in border zones of the infarcted canine heart. Recent studies show that Nav1.5 assembly and function are linked to ankyrin-G, gap, and mechanical junction proteins. In this study our objective is to expound the status of the cardiac Na channel, its interacting protein ankyrinG and the mechanical and gap junction proteins at two different times post infarction when arrhythmias are known to occur; that is, 48 hr and 5 day post coronary occlusion. Previous studies have shown the origins of arrhythmic events come from the subendocardial Purkinje and epicardial border zone. Our Purkinje cell (Pcell voltage clamp study shows that INa and its kinetic parameters do not differ between Pcells from the subendocardium of the 48hr infarcted heart (IZPCs and control non-infarcted Pcells (NZPCs. Immunostaining studies revealed that disturbances of Nav1.5 protein location with ankyrin-G are modest in 48 hr IZPCs. Therefore, Na current remodeling does not contribute to the abnormal conduction in the subendocardial border zone 48 hr post myocardial infarction as previously defined. In addition, immunohistochemical data show that Cx40/Cx43 co-localize at the intercalated disc (IDs of control NZPCs but separate in IZPCs. At the same time, Purkinje cell desmoplakin and desmoglein2 immunostaining become diffuse while plakophilin2 and plakoglobin increase in abundance at IDs. In the epicardial border zone 5 days post myocardial infarction, immunoblot and immunocytochemical analyses showed that ankyrin-G protein expression is increased and re-localized to submembrane cell regions at a time when Nav1.5 function is decreased. Thus, Nav1.5 and ankyrin-G remodeling occur later after myocardial infarction compared to that of gap and mechanical junctional proteins. Gap and mechanical junctional proteins remodel in IZPCs early, perhaps to help maintain Nav1.5 subcellular

  1. Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

    Science.gov (United States)

    Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

    2017-07-01

    In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

  2. Thirty-five-nm T-Gate In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs with an ultrahigh fmax of 610 GHz

    International Nuclear Information System (INIS)

    Choi, Do-Young; Kim, Sung-Ho; Choi, Gil-Bok; Jung, Sung-Woo; Jeong, Yoon-Ha

    2010-01-01

    Thirty-five-nanometer T-gate GaAs-based In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistors (mHEMTs) are successfully fabricated using a zigzag-shaped T-gate. We obtain a maximum extrinsic transconductance (g m ) of 1060 mS/mm and a maximum oscillation frequency (f max ) of 610 GHz. These superior results are obtained by reducing the T-gate's length to 35 nm without the assistance of a supporting layer and by fabricating a wide-recessed-gate structure. The stand-alone 35-nm T-gate effectively improves the device performance because it doesn't cause additional parasitic capacitances. The wide-recessed-gate structure alleviates impact ionization in the channel, which suppresses the kink effect in the output characteristic and reduces the output conductance (g ds ). In addition, the wide-recessed-gate structure reduces the gate-to-drain capacitance (C gd ); consequently realizing a state-of-the-art f max . The f max of 610 GHz, to our knowledge, is the highest value reported to date for GaAs-based HEMTs.

  3. Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

  4. Za přečtení stojí... Kateřina Tučková: Vyhnání Gerty Schnirch. Brno, Host 2009

    Czech Academy of Sciences Publication Activity Database

    Košnarová, Veronika

    2010-01-01

    Roč. 60, č. 5 (2010), s. 237-240 ISSN 0009-0786 Institutional research plan: CEZ:AV0Z90560517 Keywords : Czech literature * Tučková, Kateřina * interpretations Subject RIV: AJ - Letters, Mass-media, Audiovision

  5. Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Arikan, Bulent, E-mail: bulentarikanx@gmail.com; Korkmaz, Melih; Aslan, Bulent; Serincan, Uğur

    2015-08-31

    In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically altered in each sample by changing the thickness of InAs (GaSb) layers from 9 to 7 monolayers (ML) for a fixed GaSb (InAs) layer at 9 ML (7 ML). The same InSb-like strain compensation interface was used for all samples. High resolution X-ray diffraction analysis, spectral responsivity and external quantum efficiency (QE) measurements were performed to express the effects of layer thickness variations on both structural and photodetector features. The decrease in the InAs thickness resulted in the increased mismatch from 0 to + 1626 ppm and the blue shift in the 50% cut-off wavelength (λ{sub c}) from 5.41 to 4.36 μm at 77 K. The additional decrease in GaSb thickness caused further increase in the mismatch up to + 1791 ppm. The steepness of the photoresponse at the absorption band edge was quantified and presented comparatively with different photodetector parameters and material properties for a complete picture. The highest optical response was obtained from sample having 8 ML InAs and 9 ML GaSb with λ{sub c} = 4.76 μm and QE = 23.7% at 4 μm. - Highlights: • Detailed growth conditions for InAs/GaSb SLs designed for infrared detection • Precisely engineering the λ{sub c} and the ∆a{sub ⊥}/a by controlling the SL layer thicknesses • InAs layer thickness changes are more effective than the GaSb on the λ{sub c} and ∆a{sub ⊥}/a.

  6. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

    2014-07-01

    Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

  7. Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Komarov, F.; Vlasukova, L.; Greben, M.; Milchanin, O. [Belarusian State University, Independence Ave. 4, 220030 Minsk (Belarus); Zuk, J., E-mail: jotzet@hektor.umcs.lublin.pl [Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland); Wesch, W.; Wendler, E. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Togambaeva, A. [Al-Farabi Kazakh National University, 71 Al-Farabi Ave., 050040 Almaty (Kazakhstan)

    2013-07-15

    We have studied the formation of InSb and InAs precipitates with sizes of several nanometers in Si and SiO{sub 2}/Si by means of implantation of (Sb + In) or (As + In) ions with energies from 170 to 350 keV and fluencies from 2.8 to 3.5 × 10{sup 16} cm{sup −2} at 500 °C and subsequent annealing at 1050–1100 °C for 3–30 min. RBS, TEM/TED, RS and PL techniques were employed to characterize the implanted layers. A broad band in the region of 1.2–1.6 μm has been registered in the low-temperature PL spectra of both (Sb + In) and (As + In) implanted and annealed silicon crystals. It was shown that structural and optical properties of oxidized silicon crystals strongly depend on type of implanted species in silicon crystals.

  8. Surface Brillouin scattering measurement of the elastic constants of single crystal InAs0.91Sb0.09

    International Nuclear Information System (INIS)

    Kotane, L M; Comins, J D; Every, A G; Botha, J R

    2011-01-01

    Surface Brillouin scattering of light has been used to measure the angular dependence of the Rayleigh surface acoustic wave (SAW), pseudo surface acoustic wave (PSAW) and longitudinal lateral wave (LLW) speeds in a (100)-oriented single crystal of the ternary semiconductor alloy InAs 0.91 Sb 0.09 . The wave speed measurements have been used to determine the room temperature values of the elastic constants C 11 , C 12 and C 44 of the alloy. A simple and robust fitting procedure has been implemented for recovering the elastic constants, in which the merit function is constructed from explicit secular functions that determine the surface and lateral wave speeds in the [001] and [011] crystallographic directions. In the fitting, relatively larger weighting factors have been assigned to the SAW and PSAW data because of the greater precision with which the surface modes can be measured as compared with the lateral wave.

  9. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  10. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

    Science.gov (United States)

    Chen, Ze-Sheng; Ma, Ben; Shang, Xiang-Jun; He, Yu; Zhang, Li-Chun; Ni, Hai-Qiao; Wang, Jin-Liang; Niu, Zhi-Chuan

    2016-12-01

    Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g (2)(0) < 0.5 which demonstrates a pure single-photon emission.

  11. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  12. Improvement of drain current of AlGaN/GaN-HEMT through the modification of negative differential conductance (NDC), current collapse, self-heating and optimization of double hetero structure

    Science.gov (United States)

    Basumatary, Bikramjit; Maity, Santanu; Muchahary, Deboraj

    2016-09-01

    For the high-power application, high breakdown voltage of the HEMT device is required that is free from the negative effects such as current collapse and NDC. In this paper, it is found that without any substrate for the higher dimension, the breakdown is larger than the lower dimension. However, it is not free from NDC, which can be eliminated by the shorter channel. Back barrier layer is used to increase this breakdown voltage for the shorter dimension which has given very efficient result, doubling the voltage from 6 V to 13 V for the 'x' composition of 0.3 of AlxGa1-xN and 16 V for AlN back barrier. At the end, the relation of capacitance to the breakdown voltage for the shorter channel is derived, which shows that the breakdown voltage is mostly dependent on the carrier concentration in the lower layer.

  13. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  14. CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH42Cr2O7−HBr−H2O ETCHING COMPOSITIONS

    Directory of Open Access Journals (Sweden)

    I. V. Levchenko

    2017-09-01

    Full Text Available The features of InAs, InSb, GaAs, and GaSb dissolution in the (NH42Cr2O7−HBr−H2O etching compositions have been investigated. The chemical-dynamic polishing in the reproducible hydrodynamic conditions has been used. It was established that the arsenides etching rate changed similarly and achieved the maximum values in the oxidant saturated mixture (22 vol.%. It was found that the antimonides dissolution rate increases when the (NH42Cr2O7 concentration is increasing also. It was established that all etching compositions are polishing for InAs and GaAs, and in the case of InSb and GaSb the polishing solutions occupy about 50 % of the investigated concentrated regions. It was shown that the dissolution rate of all crystals decreases to 0,1 μm/min and the quality of the antimonides surface degrades when the H2O concentration is increasing. The substrates dissolution has the diffusion nature. Using metallographic analysis and atomic force microscopy it was confirmed a good quality of InAs, InSb, GaAs and GaSb surface obtained after chemical treatment in the (NH42Cr2O7−HBr−H2O polishing solutions.

  15. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

    International Nuclear Information System (INIS)

    Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

    2005-01-01

    We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

  16. The A.D. 1835 eruption of Volcán Cosigüina, Nicaragua: A guide for assessing local volcanic hazards

    Science.gov (United States)

    Scott, William E.; Gardner, Cynthia A.; Devoli, Graziella; Alvarez, Antonio

    2006-01-01

    The January 1835 eruption of Volcán Cosigüina in northwestern Nicaragua was one of the largest and most explosive in Central America since Spanish colonization. We report on the results of reconnaissance stratigraphic studies and laboratory work aimed at better defining the distribution and character of deposits emplaced by the eruption as a means of developing a preliminary hazards assessment for future eruptions. On the lower flanks of the volcano, a basal tephra-fall deposit comprises either ash and fine lithic lapilli or, locally, dacitic pumice. An overlying tephra-fall deposit forms an extensive blanket of brown to gray andesitic scoria that is 35–60 cm thick at 5–10 km from the summit-caldera rim, except southwest of the volcano, where it is considerably thinner. The scoria fall produced the most voluminous deposit of the eruption and underlies pyroclastic-surge and -flow deposits that chiefly comprise gray andesitic scoria. In northern and southeastern sectors of the volcano, these flowage deposits form broad fans and valley fills that locally reach the Gulf of Fonseca. An arcuate ridge 2 km west of the caldera rim and a low ridge east of the caldera deflected pyroclastic flows northward and southeastward. Pyroclastic flows did not reach the lower west and southwest flanks, which instead received thick, fine-grained, accretionary-lapilli–rich ashfall deposits that probably derived chiefly from ash clouds elutriated from pyroclastic flows. We estimate the total bulk volume of erupted deposits to be ∼6 km3. Following the eruption, lahars inundated large portions of the lower flanks, and erosion of deposits and creation of new channels triggered rapid alluviation. Pre-1835 eruptions are poorly dated; however, scoria-fall, pyroclastic-flow, and lahar deposits record a penultimate eruption of smaller magnitude than that of 1835. It occurred a few centuries earlier—perhaps in the fifteenth century. An undated sequence of thick tephra-fall deposits on

  17. Exploring coherence of individual excitons in InAs quantum dots embedded in natural photonic defects: Influence of the excitation intensity

    Science.gov (United States)

    Wigger, D.; Mermillod, Q.; Jakubczyk, T.; Fras, F.; Le-Denmat, S.; Reiter, D. E.; Höfling, S.; Kamp, M.; Nogues, G.; Schneider, C.; Kuhn, T.; Kasprzak, J.

    2017-10-01

    The exact optical response of quantum few-level systems depends crucially on the exact choice of the incoming pulse areas. We use four-wave mixing (FWM) spectroscopy to infer the coherent response and dynamics of single InAs quantum dots (QDs) and study their pulse area dependence. By combining atomic force microscopy with FWM hyperspectral imaging, we show that the retrieved FWM signals originate from individual QDs enclosed in natural photonic defects. The optimized light-matter coupling in these defects allows us to perform our studies in a wide range of driving field amplitudes. When varying the pulse areas of the exciting laser pulses, Rabi rotations of microscopic interband coherences can be resolved by the two-pulse FWM technique. We investigate these Rabi coherence rotations within two- and three-level systems, both theoretically and experimentally, and explain their damping by the coupling to acoustic phonons. To highlight the importance of the pulse area influence, we show that the phonon-induced dephasing of QD excitons depends on the pulse intensity.

  18. INCIDÊNCIA DE ANEMIA INFECCIOSA EQÜINA NO ESTADO DE GOIÁS INFECTIOUS ANEMIA INCIDENCE IN EQUINES IN THE GOIÁS STATE, BRAZIL

    Directory of Open Access Journals (Sweden)

    Jales Henrique Freitas Curado

    2007-09-01

    Full Text Available

    Dos 2.123 soros de eqüinos, examinados pelo método de COGGINS, encontrou-se a taxa de 3,7% de reagentes positivos para a anemia infecciosa eqüina. Estes dados indicam que, nos municípios estudados no Estado de Goiás, os índices de prevalência estão dentro dos limites esperados, especialmente nos municípios localizados em áreas alagadiças, onde a veiculação da doença é mais intensa.

    From 2,123 equine serum examined by COGGINS method it was found 3.7% positive reagents for equine infections anemia. The data indicate that, for the counties studied in the State of Goiás, prevalence rates are within the expected range, especially in the counties with flooded areas where disease incidence is more intense.

  19. GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

    Science.gov (United States)

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-02-01

    Type-II band alignment offers several advantages for proposed intermediate band solar cell structures. We focused on the quantum dot (QD) solar cell structures based on type-II InAs/GaAs QD layers capped with GaAsSb strain reducing layers. The GaAsSb strain reducing layers were prepared with or without graded Sb concentration. Strong enhancement of photocurrent was achieved by adding an InGaAs buffer layer under the type-II QD structure, thanks to improved electron extraction from QDs. For comparison, a structure with GaAs-capped InAs QDs was prepared, too. Properties of all structures are compared and the mechanism of carrier extraction or relaxation is discussed. Gradient of antimony concentration in a strain reducing layer (SRL) significantly improved resulting properties of solar cell structures. It is shown that in a multiple-QD structure with a GaAsSb SRL, electrons and holes have non-intersecting trajectories which prevents carrier recombination and improves the efficiency of solar cell structures. NextNano band structure calculations of different types of structures support our experimental results.

  20. Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband

    International Nuclear Information System (INIS)

    Ishi-Hayase, J.; Akahane, K.; Yamamoto, N.; Kujiraoka, M.; Inoue, J.; Ema, K.; Tsuchiya, M.; Sasaki, M.

    2006-01-01

    We investigate the excitonic dephasing in a stack of self-assembled quantum dots (SAQDs) by using a four-wave-mixing (FWM) technique performed in the optical telecomm-fiber wavelength region at 6 K. A sample used in our experiment is a 150-layer stack of InAs SAQDs embedded in InGaAlAs grown on InP(3 1 1)B substrate fabricated by molecular beam epitaxy. By using a novel strain-controlled technique, the resonant wavelength of the exciton ground state (GS) ranges from 1.25 to 1.5 μm which is much longer than that in typical In(Ga)As SAQDs. In the weak excitation region, the intrinsic dephasing time of excitons at the excitation wavelength of 1.43 μm reaches 770 ps which is much longer than that in most SAQDs with the resonant wavelength of <1 μm. We also find a strong anisotoropy of the signal intensity with respect to the crystal axis attributed to the orientation of InP(3 1 1)B substrate and the elongated shape of QDs

  1. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Utrilla, A. D.; Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Departamento de Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; González, D.; Ben, T. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2014-07-28

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.

  2. Competitive growth mechanisms of InAs quantum dots on InxGa1-xAs layer during post growth interruption

    International Nuclear Information System (INIS)

    Yang, Changjae; Kim, Jungsub; Sim, Uk; Lee, Jaeyel; Choi, Won Jun; Yoon, Euijoon

    2010-01-01

    We investigated the effect of the post growth interruption (GI) on InAs quantum dots (QDs) grown on In x Ga 1-x As strained buffer layers (SBL). When QDs were grown on the 5 and 10% In content SBLs by using post GI, the size of QDs increased as its density decreased. Based on the 50 meV red-shift of PL in these cases, the transport of materials between QDs leads to the increase of QD size with maintaining its composition during the post GI. On the other hand, when using SBLs with the 15 and 20% In contents, the size of QDs increased, but its density was a little reduced. In addition, PL results were observed blue-shifted by about 20 meV and 2 meV, respectively. Considering the interruption of source gases during the post GI, these observations are strong evidence of the Ga incorporation from 15 and 20% In content SBLs. Therefore, these results imply that the dominant mechanism which increases the size of QDs during the post GI depends on the growth condition of SBL.

  3. U.S.- South Korea Relations

    Science.gov (United States)

    2016-03-28

    contentious bilateral issues, how Japan should handle the issue of “comfort women” who were forced to provide sexual services to Japanese soldiers during...have been as follows: Rhee Syngman, July 28, 1954; Roh Tae Woo, October 18, 1989; Kim Young Sam, July 26, 1995; and Kim Dae Jung , June 10, 1998...occur through 2018.” 53 The original cost estimate was over $10 billion; South Korea was to contribute $4 billion of this. Estimates in 2010

  4. Screening of agricultural wastes as a medium production of catalase for enzymatic fuel cell by Neurospora crassa InaCC F226

    Science.gov (United States)

    Santoso, Pugoh; Yopi

    2017-12-01

    Explorations of local microorganisms from Indonesia that can produce of catalase are still limited. Neurospora crassa is a fungus which resulting of two kinds of catalase, namely catalase-1 and catalase-3. We studied the production of catalase by Neurospora crassa (no. F226) from Indonesia Culture Collection (InaCC) in Solid State Fermentation (SSF). Among four screened agro wastes (corn cob, rice straw, oil palm empty fruit bunches, and bagasse), rice straw and oil palm empty fruit bunches (OPEFB) were remarked as the most promising substrate suited for the excellent growth and adequate production of catalase. Based on the result, the method of solid state fermentation was suitable to production of catalase. It is caused that the medium served to maintain microbial growth and metabolism. The filamentous filament is more suitable for living on solid media because it has a high tolerance to low water activity, and it has a high potential to excrete hydrolytic enzymes that caused of its morphology. The filamentous filament morphology allows the fungus to form colonies and penetrate the solid substrates in order to obtain nutrients. The results showed that the highest catalase activity was obtained on rice straw and oil palm empty fruit bunches medium with catalase activity of 39.1 U/mL and 37,7 U/mL in 50% moisture content medium, respectively. Optimization of humidity and pH medium in the rice straw were investigated which is the highest activity obtained in 30% moisture content and pH medium of 6. The catalase activity was reached in the value of 53.761 U/mL and 56.903 U/mL by incubated 48 hours and 96 hours, respectively.

  5. Influence of the Thickness of the Barrier Layer in Nanoheterostructures and the Gate-Drain Capacitance on the Microwave and Noise Parameters of Field-Effect AlGaN/GaN HEMT

    Science.gov (United States)

    Mikhaylovich, S. V.; Fedorov, Yu. V.

    2016-07-01

    We perform a computational and analytical study of how the thickness of the barrier layer in nanoheterostructures and the gate-drain capacitance C gd influence the microwave parameters (limiting frequency of current amplification and maximum generation frequency) and noise parameters (noise factor) of a field-effect AlGaN/GaN high electron mobility transistor. The results of complex measurements of the parameters of such transistors based on nanoheterostructures with a barrier layer thickness of 3.5-15.7 nm, which were performed within the framework of four technological routes in the range 0.1-67 GHz, are presented. It is shown that in order to reduce the noise ratio and improve the microwave parameters, it is necessary to optimize both the parameters of nanoheterostructures and the manufacturing techniques. In particular, the thickness of the barrier layer should be reduced, and the gate length should be chosen such as to maximize the product of the squared maximum current amplification frequency in the interior of the transistor and the output impedance between the drain and the source. Additionally, attention should be given to the shape of the gate to reduce the capacitance C gd. Under certain conditions of manufacture of nitride field-effect HEMT, one can achieve a lower noise factor compared with the transistors based on arsenide nanoheterostructures.

  6. Selective wet-etching of InGaAs on InAlAs using adipic acid and its application to InAlAs/InGaAs HEMTs

    Science.gov (United States)

    Higuchi, K.; Uchiyama, H.; Shiota, T.; Kudo, M.; Mishima, T.

    1997-04-01

    Highly selective wet-etching of InGaAs on InAlAs was demonstrated using pH-controlled adipic acid, 0268-1242/12/4/024/img1 and 0268-1242/12/4/024/img2 solutions. A maximum selectivity of 250 was obtained by controlling the InGaAs and InAlAs etching mechanisms. By identifying the rate-determining steps for the etching of InAlAs and InGaAs, we found that the high selectivity is due to the difference in solubility between the oxide of InAlAs and that of InGaAs in the adipic acid solution. InAlAs/InGaAs HEMTs fabricated in a 0268-1242/12/4/024/img3 diameter wafer by using this highly selective etching had a threshold voltage and a transconductance with standard deviations of 38 mV and 0268-1242/12/4/024/img4, respectively.

  7. DIAGNÓSTICO DA ANEMIA INFECCIOSA EQÜINA - RELATO DE UM CASO OCORRIDO EM GOIÁS DIAGNOSIS OF INFECTIOUS EQUINE ANEMIA IN A CASE OCCURRED IN GOIÁS, BRAZIL

    Directory of Open Access Journals (Sweden)

    Lourival Pereira Nunes

    2007-09-01

    Full Text Available

    Trata o presente trabalho do primeiro caso diagnosticado de Anemia Infecciosa Eqüina, ocorrida em Goiás. O diagnóstico foi estabelecido com base em exames clínicos, laboratoriais e prova de inoculação.

    This paper presents the first diagnosis in Equine infectious Anemia in Goiás State — Brazil. The diagnosis was made after clinical and laboratorial examinations and inoculation test.

  8. Influence of nitrogen on the growth and the properties of InAs quantum dots; Einfluss von Stickstoff auf das Wachstum und die Eigenschaften von InAs-Quantenpunkten

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, O.

    2004-11-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  9. Capping layer modulation of composition of GaAs/In0.15Ga0.75As/InXGa1-XAs/GaAs quantum wells and InAs QD's emission

    Science.gov (United States)

    Vega-Macotela, L. G.; Torchynska, T.; Polupan, G.; Muñiz-García, P. I.

    2018-02-01

    The GaAs/In0.15Ga0.85As/InxGa1-xAs /GaAs quantum wells (QWs) with the InAs quantum dots (QDs) have been studied by means of photoluminescence and high resolution X ray diffraction (HR-XRD) methods. The QW structures are characterized by the different compositions of capping InxGa1-xAs layers with the parameter x from the range 0.10-0.25. The InxGa1-xAs composition varying is accompanied by the change non-monotonously of the PL intensity and peak positions of InAs QD emission. HR-XRD results have been used for the control the QW compositions. Numerical simulations of HR-XRD results have shown that the composition of quantum layers vary none monotonously in studied QD structures as well. The physical reasons of the mentioned optical and structural effects and their dependence on capping layer compositions have been discussed.

  10. Self-assembled InAs quantum dots. Properties, modification and emission processes; Selbstorganisierte InAs-Quantenpunkte. Eigenschaften, Modifizierung und Emissionsprozesse

    Energy Technology Data Exchange (ETDEWEB)

    Schramm, A.

    2007-09-06

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  11. Structural, magnetic, and lattice-dynamical interface properties of epitactical iron films on InAs(001) and GaAs(001) substrates; Strukturelle, magnetische und gitterdynamische Grenzflaecheneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Peters, Robert

    2009-07-14

    In this thesis the structure, magnetism and interface properties of ferromagnet-semiconductor hybrid structures were investigated. The main goal of this thesis was to obtain information on physical properties at the interface between a ferromagnetic metal and a III-V semiconductor (SC). For this purpose Fe films that serve as ferromagnetic contacts were deposited in ultrahigh vacuum (UHV) on InAs(001) and GaAs(001) substrates, respectively, and investigated. Both systems are interesting model systems with respect to electrical spin injection from a ferromagnetic metal into a semiconductor. In order for spin injection to occur, it is known that a Schottky barrier must form at the Fe/SC interface. Film growth and film structure were investigated in-situ in UHV by electron diffraction (RHEED) and ex-situ by X-ray diffraction. For determining the magnetic properties {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS) combines with {sup 57}Fe probe-layer technique was employed at different temperatures. Further, the partial Fe phonon density of states (PDOS) at the Fe/InAs (001) interface was determined by nuclear resonant inelastic X-ray scattering (NRIXS) from a {sup 57}Fe probe-layer. The CEM spectra (at room temperature) provided relatively high values of the average hyperfine magnetic field of left angle B{sub hf} right angle {proportional_to} 27 T and of the most-probable hyperfine magnetic field of B{sub hf,} {sub peak} {proportional_to} 30 T. This provides evidence for relativ high average Fe magnetic moments of {proportional_to} 1.8 {mu}{sub B}. The partial Fe phonon density of states (PDOS) at the Fe/InAs(001) interface is remarkably modified as compared to that of bulk bcc Fe. Using magnetometry and {sup 57}Fe CEMS, a strong temperature dependent magnetization directions was observed for Fe/Tb multilayers on InAs(001). Furthermore it is shown that such Fe/Tb multilayers on p-InAs(001) with perpendicular spin texture are useful as potential

  12. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    International Nuclear Information System (INIS)

    Shimomura, K.; Kamiya, I.

    2015-01-01

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers

  13. Ceratoplastia lamelar em cães utilizando membrana fetal eqüina como enxerto: estudo experimental Lamelar keratoplasty in dogs using equine fetal membrane as graft: experimental study

    Directory of Open Access Journals (Sweden)

    Cintia Aparecida Lopes Godoy

    2002-09-01

    Full Text Available Objetivo: Avaliar o emprego da membrana fetal (membrana amniótica, córion e alantóide eqüina como enxerto em ceratoplastia lamelar em cães. Métodos: Foram utilizados 9 animais SRD, respeitando as normas para experimentos em animais da ARVO - Association for Research in Vision and Ophthalmology. Ceratectomia semipenetrante foi realizada com o auxílio de trépano de 5 mm de diâmetro em região temporal superior, com subseqüente fixação de fragmento de membrana fetal eqüina de 6 mm de diâmetro com fio mononylon 8-0. Realizou-se avaliação clínica durante 2, 7, 15 e 60 dias. Os animais foram sacrificados e os olhos enucleados submetidos a estudo histológico. Resultados: Observou-se clinicamente edema moderado nas áreas circunjacentes ao implante desde o início até a fase intermediária do experimento. A neovascularização apareceu de maneira progressiva, com maior intensidade no período intermediário, regredindo paulatinamente. Aos 60 dias, notava-se uma mácula no local da cirurgia. Os achados histológicos demonstraram epitelização e perfeita integração do enxerto ao tecido autóctone logo aos 7 dias de evolução, quando também evidenciou respostas celular e vascular mais intensas. Aos 15 dias, verificou-se diminuição dos elementos vasculares em relação à quantidade de matriz e elementos celulares proliferados. Constatou-se ausência quase total de infiltrado inflamatório no enxerto e nos pontos de sutura. Conclusão: O emprego da membrana fetal (membrana amniótica, córion e alantóide eqüina como enxerto em ceratoplastia lamelar em cães é factível e produz bons resultados.Purpose: To evaluate the applicability of the equine fetal membrane (amniotic membrane, chorion and alantoid as graft in lamelar keratoplasty in dogs. Methods: 9 mixed breed dogs were used, according to the ARVO statement for use of animals in ophthalmic and vision research. Superficial keratectomy was performed with a 5 mm trephine and a

  14. Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb

    Directory of Open Access Journals (Sweden)

    R. Pässler

    2013-08-01

    Full Text Available Characteristic non-Debye behaviors of low-temperature heat capacities of GaP, GaAs, GaSb, InP, InAs, and InSb, which are manifested above all in form of non-monotonic behaviors (local maxima of the respective Cp(T/T3 curves in the cryogenic region, are described by means of a refined version of a recently proposed low-to-high-temperature interpolation formula of non-Debye type. Least-mean-square fittings of representative Cp(T data sets available for these materials from several sources show excellent agreements, from the liquid-helium region up to room temperature. The results of detailed calculations of the respective material-specific Debye temperature curves, ΘD(T, are represented in graphical form. The strong, non-monotonic variations of ΘD(T values confirm that it is impossible to provide reasonable numerical simulations of measured Cp(T dependences in terms of fixed Debye temperatures. We show that it is possible to describe in good approximation the complete Debye temperature curves, from the cryogenic region up to their definitive disappearance (dropping to 0 in the high temperature region, by a couple of unprecedented algebraic formulas. The task of constructing physically adequate prolongations of the low-temperature Cp(T curves up to melting points was strongly impeded by partly rather large differences (up to an order of 10 J/(K·mol between the high-temperature data sets presented in different research papers and/or data reviews. Physically plausible criteria are invoked, which enabled an a priori rejection of a series of obviously unrealistic high-temperature data sets. Residual uncertainties for GaAs and InAs could be overcome by re-evaluations of former enthalpy data on the basis of a novel set of properly specified four-parameter polynomial expressions applying to large regions, from moderately low temperatures up to melting points. Detailed analytical and numerical descriptions are given for the anharmonicity

  15. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44 matrix for use in intermediate band solar cells

    Science.gov (United States)

    Debnath, Mukul C.; Liang, Baolai; Laghumavarapu, Ramesh B.; Wang, Guodong; Das, Aparna; Juang, Bor-Chau; Huffaker, Diana L.

    2017-06-01

    High-quality InAs quantum dots (QDs) with nominal thicknesses of 5.0-8.0 monolayers were grown on a digital AlAs0.56Sb0.44 matrix lattice-matched to the InP(001) substrate. All QDs showed bimodal size distribution, and their optical properties were investigated by photoluminescence (PL) and time-resolved PL measurements. Power dependent PL exhibited a linear relationship between the peak energy and the cube root of the excitation power for both the small QD family (SQDF) and the large QD family (LQDF), which is attributed to the type-II transition. The PL intensity, peak energy, and carrier lifetime of SQDF and LQDF showed very sensitive at high temperature. Above 125 K, the PL intensity ratio increased continuously between LQDF and SQDF, the peak energy shifted anomalously in SQDF, and the longer carrier radiative lifetime (≥3.0 ns at 77 K) reduced rapidly in SQDF and slowly in LQDF. These results are ascribed to thermally activated carrier escape from SQDF into the wetting layer, which then relaxed into LQDF with low-localized energy states.

  16. Semiclassical three-valley Monte Carlo simulation analysis of steady-state and transient electron transport within bulk InAsxP1-x, InAs and InP

    Directory of Open Access Journals (Sweden)

    Hadi Arabshahi

    2010-04-01

    Full Text Available We have studied how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk zincblende InAsxP1-x, InAs and InP. Calculations are made using a non-parabolic effective-mass energy band model. Monte Carlo simulation includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimised pseudo-potential band calculations to ensure excellent agreement with experimental information and ab-initio band models. The effects of alloy scattering on the electron transport physics are examined. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field-effect transistor. The electron drift velocity relaxes to the saturation value of about 1.5105 ms-1 within 4 pico-seconds for all crystal structures. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

  17. Magnetization and susceptibility of a parabolic InAs quantum dot with electron–electron and spin–orbit interactions in the presence of a magnetic field at finite temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, D. Sanjeev, E-mail: sanjeevchs@gmail.com [School of Physics, University of Hyderabad, Hyderabad 500046 (India); Mukhopadhyay, Soma [Department of Physics, CMR College of Engineering and Technology, Hyderabad (India); Chatterjee, Ashok [School of Physics, University of Hyderabad, Hyderabad 500046 (India)

    2016-11-15

    The magnetization and susceptibility of a two-electron parabolic quantum dot are studied in the presence of electron–electron and spin–orbit interactions as a function of magnetic field and temperature. The spin–orbit interactions are treated by a unitary transformation and an exactly soluble parabolic interaction model is considered to mimic the electron–electron interaction. The theory is finally applied to an InAs quantum dot. Magnetization and susceptibility are calculated using canonical ensemble approach. Our results show that Temperature has no effect on magnetization and susceptibility in the diamagnetic regime whereas electron–electron interaction reduces them. The temperature however reduces the height of the paramagnetic peak. The Rashba spin–orbit interaction is shown to shift the paramagnetic peak towards higher magnetic fields whereas the Dresselhaus spin–orbit interaction shifts it to the lower magnetic field side. Spin–orbit interaction has no effect on magnetization and susceptibility at larger temperatures. - Highlights: • Temperature has no effect on magnetization and susceptibility in the diamagnetic regime but reduces the height of the paramagnetic peak. • Electron-electron interaction reduces magnetization and susceptibility in the diamagnetic region. • Rashba spin–orbit interaction shifts the paramagnetic peak towards higher magnetic fields. • Dresselhaus spin–orbit interaction shifts the paramagnetic peak towards lower magnetic fields. • Spin–orbit interaction has no effect on magnetization and susceptibility at larger temperatures.

  18. Electrical and optical measurements on a single InAs quantum dot using ion-implanted micro-LEDs; Elektrische und optische Untersuchungen an einem einzelnen InAs-Quantenpunkt mit Hilfe ionenstrahlimplantierter Mikro-LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, R.F.

    2006-10-19

    The goal of this present thesis was to electrically and optically address a single InAs quantum dot. Therefore micro-structured quantum-dot-LEDs with an emission area smaller than 1 {mu}m{sup 2} were developed. One major part of this work was contributed to optimizing several steps of the micro-LED fabrication process. To be able to compare the electrical conductivity obtained from Hall-measurements to the expected values, the implantation profile was investigated both theoretically and experimentally. As the thermal annealing step had to be performed in the growth chamber of the MBE-system several annealing parameters had to be modified to achieve optimum electrical conductivity and quantum dot growth. For one of the Be-implanted pin-samples the principle of the single-quantum-dot-LEDs could be proved. The smallest device of this sample, with nominal stripe widths of 150 nm (FIB-stripe) and 400 nm (top-stripe), showed typical features of a single quantum dot. In the high-resolution EL-spectra of this device three extremely sharp emission lines were observed which clearly could be assigned to the electron-hole recombination from a single quantum dot. To further identify the origin of these lines their optical intensities were plotted against the injection current. From this plot it could be deduced, that the first evolving line clearly belongs to the simple exciton 1X. The following lines could be assigned to the decay of the biexciton 2X and the triexciton 3X{sub s}, respectively. With increasing bias all three lines show a pronounced red-shift due to the quantum confined Stark effect (QCSE). To identify the charge state of the observed excitonic lines, additional high-resolution IV curves were taken. (orig.)

  19. Metafizinės patirtys Gražinos Cieškaitės lyrikoje | Metaphysical Experiences in Gražina Cieškaitė’s poetry

    Directory of Open Access Journals (Sweden)

    Audinga Peluritytė

    2005-01-01

    Full Text Available This paper analyses and discusses the signs of metaphysical experience in the work of the contemporary Lithuanian poetess Gražina Cieškaitė. The paper was inspired by Vytautas Kavolis’ provoking thought that in Cieškaitė’s poetry attempt is made to analyse and criticise the key myths of Western civilisation, and female mythology, very old and going back to pre-civilisation conscience, is recreated from the shards of the broken myth of Western civilisation. In this paper, Cieškaitė’s work is analysed in several stages that are reflected in the headlines of the sections. Recognisable are the landmarks of metaphysical thinking, mythical personages and plots; discussed are the outcomes of the interaction of eclectic metaphysical and mythical thinking; finally, an attempt is made at recognising the central idea of this metaphysical lyric and at reconstructing the version of myth so closely linked with this idea. All parts of the paper are concerned with the issue of poetic language, and the key features of Cieškaitė’s poetics are recorded. The paper asserts that in Cieškaitė’s work it is really possible to restore an extremely old version of female mythology, which is embodied in the figure of the goddess Aphrodite that had acquired Promethean creative powers. Yet here metaphysical experiences can hardly be generalised as one comprehensive metaphysical theory. In Cieškaitė’s work, metaphysical thinking based on language and logic frequently yields ground to spontaneous mystical experiences, which are not controlled by either logic or language.

  20. Uso de un e-portafolio de recursos de aprendizaje como alternativa didáctica para la enseñanza de la anatomía y fisiología humana: una propuesta para los programas de salud que imparte el INA.

    OpenAIRE

    Cruz Villalobos, Randall

    2015-01-01

    Proyecto final de graduación, Maestría profesional, Maestría en Tecnología e Innovación Educativa El presente proyecto tiene como objetivo desarrollar una propuesta de un e-portafolio de recursos de aprendizaje como estrategia didáctica para la enseñanza de la anatomía y fisiología humana. Surge a partir de las carencias identificadas en los programas de formación técnica en salud que se desarrollan en el INA, en cuanto a disponibilidad de estrategias y recursos de aprendizaje que se ajust...

  1. In0.69Al0.31As0.41Sb0.59/In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers

    Science.gov (United States)

    2010-09-01

    semi-insu- lating (SI) GaAs substrate; a buffer of 3000 Å GaAs, 12 Å AlSb , 5000 Å Al0.65Ga0.35Sb, and 1 mm of In0.21Ga0.19Al0.60Sb; a 5000 Å n + (Te...Lett., 2005, 41, pp. 1088–1089 3 Deal, W.R., Tsai, R., Lange, M.D., Boos, J.B., Bennett, B.R., and Gutierrez, A.: ‘A W-band InAs/ AlSb low-noise/low

  2. Bilateral lamellar keratoplasty in descemetocele treatment in dog with botulism by use of equine renal capsule and conjunctival pedicle graft Emprego de ceratoplastia lamelar bilateral no tratamento de descemetocele em cão com botulismo, utilizando-se cápsula renal eqüina e enxerto conjuntival pediculado

    Directory of Open Access Journals (Sweden)

    José Luiz Laus

    1999-06-01

    Full Text Available A 3-year-old, male mixed breed dog with botulism and bilateral descemetocele was submitted to lamellar keratoplasty with equine renal capsule preserved in glycerin in the right eye and conjunctival pedicle graft in the left eye. The evolution was satisfactory in both eyes, but better in the eye receiving the equine renal capsule, because the corneal transparence was more evident in that eye. On the other hand, the surgical period was more quickly in the eye receiving the equine renal capsule because the preparation of the conjunctival pedicle before the keratoplasty was not necessary.Um animal da espécie canina, macho, de 3 anos de idade, com botulismo e descemetocele bilateral foi submetido à ceratoplastia lamelar com cápsula renal eqüina preservada em glicerina no olho direito, e enxerto conjuntival pediculado no olho esquerdo. Ambos os olhos mostraram evolução satisfatória porém, o olho receptor da cápsula renal eqüina apresentou transparência corneana mais evidente.

  3. Anemia infecciosa eqüina: prevalência em eqüídeos de serviço em Minas Gerais Equine infectious anemia: prevalence in working equids of livestock herds, in Minas Gerais, Brazil

    Directory of Open Access Journals (Sweden)

    V.M.A. Almeida

    2006-04-01

    Full Text Available Estimaram-se, no estado de Minas Gerais, a prevalência e a distribuição espacial da anemia infecciosa eqüina (AIE em propriedades com eqüídeos de serviço. As amostras de sangue, de 6540 eqüídeos de 1940 rebanhos foram coletadas no período de setembro de 2003 a março de 2004, nos 853 municípios do estado. Utilizaram-se dois testes de laboratório em seqüência: ELISA, usando-se antígeno recombinante gp90, e imunodifusão em gel de ágar (IDGA. As prevalências foram de 5,3% [IC=4,3 a 6,3%] para rebanhos e de 3,1% [IC=2,2 a 3,9%] para animais. O estado de Minas Gerais foi considerado área endêmica para AIE. As mais altas prevalências para rebanhos e para animais foram encontradas na região Norte/Noroeste, seguida pela região Vale do Mucuri/Jequitinhonha.The prevalence and spatial distribution of equine infectious anemia (EIA were estimated in livestock herds where equids were used as draft power and for transportation in the State of Minas Gerais, Brazil. Serum samples were collected from September/2003 to March/2004 in 853 municipalities of the state. The sample comprised 6,540 equids from 1,940 herds. Two laboratorial tests were performed in sequence: ELISA using a recombinant gp90 protein, following by the AGID. The prevalence in the herds was estimated in 5.3% [CI = 4.3 to 6.3%], and 3.1% [CI = 2.2 to 3.9%] of the animals tested were positive. Minas Gerais was considered an endemic region for EIA. The highest prevalence for herds and animals was found in North/Northwest region (strata followed by Vale do Mucuri/Jequitinhonha region.

  4. DRUŽINA IN SAMOVREDNOTENJE MLADOSTNIKOV

    OpenAIRE

    Kladnik, Damjana

    2010-01-01

    Diplomska naloga obravnava družino in samovrednotenje mladostnikov. Kadar se posameznik vrednoti negativno, se zavrača in ima do sebe slabši odnos kot tisti, ki se ceni in vrednoti pozitivno. Pri samovrednotenju gre torej za vrednostno obarvana stališča, ki jih posameznik zavzame do sebe in svojih sposobnosti, vse to pa pomembno vpliva na kvaliteto njegovega življenja, še posebej pa na njegovo zdravje, notranje zadovoljstvo, opravljanje nalog, postavljanje in doseganje ciljev ter kvaliteto od...

  5. Influência da heparina sódica na ocorrência de laminite eqüina induzida por sobrecarga de carboidratos Influence of heparin in occurrence of carbohydrate overload-induced equine laminitis

    Directory of Open Access Journals (Sweden)

    L.P. Martins Filho

    2008-12-01

    Full Text Available Avaliou-se a eficiência da infusão intravenosa de heparina sódica (100UI/kg/8h, a partir de 24h após o fornecimento de carboidrato, até completar 48h no controle da laminite eqüina experimentalmente induzida por sobrecarga de carboidrato (17,6g de amido de milho/kg de peso corpóreo. Foram utilizados 15 eqüinos adultos, distribuídos em três grupos experimentais: GI (grupo-controle; GII (grupo laminite e GIII (grupo laminite+heparina. Posteriormente ao fornecimento de carboidrato, os animais foram submetidos a exames físicos e laboratoriais durante um período de 48 horas. Ao final do experimento, os animais foram submetidos à eutanásia pela aplicação intravenosa de 5ml de maleato de acepromazina seguida de 1g de tiopental sódico e 1 litro de solução saturada de KCl para a obtenção de amostras de tecidos dos cascos, necessárias ao exame histológico. Os animais de GII e GIII, submetidos à sobrecarga de carboidratos, desenvolveram laminite, exibindo claudicação 12 e 24h após o fornecimento de carboidrato, respectivamente, bem como aumentos da freqüência cardíaca e do tempo de preenchimento capilar. As alterações histológicas, semelhantes em GII e GIII, eram do tipo degenerativo, como adelgaçamento de lâminas epidérmicas, retração, achatamento e deslocamento de lâminas dérmicas, vacuolização epidérmica e desorganização do tecido epidérmico. A infusão da heparina sódica não preveniu ou atenuou a degeneração laminar.The efficacy of intravenous heparin administration (100UI/kg/8h, from 24 to 48h after carbohydrate administration in the control of carbohydrate overload-induced equine laminitis (17.6g of corn starch/kg live weight was evaluated. Fifteen horses were allocated into three experimental groups: GI (control group, GII (laminitis group, and GIII (laminitis+heparin group. These animals were submitted to physical and laboratorial examination during 48h. After that time, they were euthanized with

  6. Solução concentrada de albumina eqüina na fluidoterapia em eqüinos com desidratação leve a moderada Equine concentrated albumin solution in the fluid therapy in horses with slight to moderate dehydration

    Directory of Open Access Journals (Sweden)

    C.B. Belli

    2008-02-01

    Full Text Available Avaliou-se o efeito da solução concentrada de albumina eqüina diluída a 5% em solução fisiológica (SF durante fluidoterapia em eqüinos, após indução de desidratação leve a moderada, utilizando-se cinco eqüinos adultos, sem alterações clínicas. Cada animal passou por dois protocolos de fluidoterapia: apenas com SF (metade sob pressão e metade em fluxo contínuo - grupo-controle; com solução de albumina eqüina e SF (apenas em fluxo contínuo - grupo experimental. Avaliaram-se peso, exame físico geral, hematócrito, osmolalidade plasmática, gasometria, proteína total, albumina, uréia, creatinina, Na, K, débito cardíaco e pressão arterial, e calcularam-se pressão oncótica e volume plasmático. Após a aplicação de metade da SF sob pressão nos animais do grupo-controle, as alterações no hematócrito, na proteína total, na albumina, na pressão arterial e na pressão oncótica foram semelhantes às encontradas nos do grupo experimental após aplicação apenas da solução de albumina. Conclui-se que a solução de albumina eqüina é de fácil preparação e aplicação, não demonstra efeitos deletérios na dose e velocidade utilizadas e é passível de ser utilizada como colóide na fluidoterapia na espécie eqüina.The effect of the equine concentrated albumin solution diluted to 5% in physiologic saline solution (PSS during fluid therapy in horses after induced slight to moderate dehydration was evaluated in five adult horses with no clinical alterations. Each animal was submitted to two fluid therapy protocols; with only PSS (half of the total volume under pressure and half in continuous flow - control-group, or with equine albumin solution and PSS (only in continuous flow - treated-group. Body weight; general physical examination, packed cell volume (PCV; plasmatic osmometry; gasometry, total protein, albumin, urea, creatinin, Na, and K, cardiac output; and arterial pressure; and calculation of the oncotic

  7. Immunogenicity and cross reactivity indices of Streptococcus equi subsp. equi strains isolated from cases of Strangles and commercial vaccines Imunogenicidade e índices de reatividade cruzada de cepas de Streptococcus equi subsp. equi isoladas de casos de Adenite Eqüina e vacinas comerciais

    Directory of Open Access Journals (Sweden)

    Carina Martins de Moraes

    2009-08-01

    Full Text Available Horse Strangles appears frequently in animals vaccinated with commercial bacterins in Rio Grande do Sul, Brazil. Aiming to know the antigenic relationships of strains recovered from sick animals among them and with two vaccines profusely used in the state, bilateral cross reactivity indices (CRI were estimated. In addition, the immunogenicity of vaccines prepared with field isolates and commercial vaccines was tested in mice. Antibody titers were measured by ELISA and expressed as seroconversions. Thirteen strains of Streptococcus equi subsp. equi, nine classified biochemically as typical and other four as atypical strains, were recovered from 35 sick horses belonging to 10 herds of Rio Grande do Sul, Brazil. The strains recovered from sick horses showed very close CRI, suggesting antigenic homogeneity among them, but not with the vaccinal strains. A vaccine produced with an atypical strain induced the highest seroconversion, 9.4, while two produced with typical strains were poorly-immunogenic. The commercial vaccines were less immunogenic than five and four vaccines produced with field strains, inducing seroconversions of 2.6 and 3.8, respectively.A Adenite Eqüina é freqüente em animais vacinados com bacterinas comerciais no Rio Grande do Sul. Com o objetivo de determinar as relações antigênicas entre cepas isoladas de casos clínicos e duas vacinas amplamente utilizadas no Estado, foram determinados os índices de reatividade cruzada bilateral (IRC entre elas. Também foi determinada a imunogenicidade em camundongos de vacinas preparadas com cepas de campo e de vacinas comerciais. Os títulos de anticorpos foram determinados por ELISA e expressos como soroconversão. Foram isoladas 13 cepas de Streptococcus equi subsp. equi de 35 casos clínicos de Adenite Eqüina em 10 diferentes rebanhos do Rio Grande do Sul, Brasil, das quais nove foram classificadas bioquimicamente como típicas e outras quatro como atípicas. As cepas de campo

  8. Aspectos radiográficos e tomográficos de hemangiossarcoma de meninges causando síndrome da cauda eqüina em um Pastor Alemão Radiographic and tomographic aspects of meningeal hemangiosarcoma in a German Shepherd dog with clinical signs of cauda equina sindrome

    Directory of Open Access Journals (Sweden)

    Ana Carolina Brandão de Campos Fonseca Pinto

    2007-04-01

    Full Text Available O hemangiossarcoma é uma neoplasma altamente maligna da linha de células endoteliais e que, portanto, pode ter origem em qualquer tecido com vasos sangüíneos. Descreve-se um caso raro de hemangiossarcoma de meninge em um cão Pastor Alemão de 8 anos de idade, com manifestações clínicas de síndrome da cauda eqüina. O diagnóstico foi realizado com base nos achados clínicos, radiográficos, tomográficos e histopatológicos.Hemangiosarcoma is a highly malignant neoplasia derived from the endothelial cell line and, therefore, can arise in any tissue with blood vessels. A case of a rare meningeal site of hemangiosarcoma in an eight-year old German Shepherd dog with clinical signs of cauda equina sindrome is described. The diagnosis was made based on clinical, radiographic, tomographic and histopathological findings.

  9. Reliability Investigation of GaN HEMTs for MMICs Applications

    Directory of Open Access Journals (Sweden)

    Alessandro Chini

    2014-08-01

    Full Text Available Results obtained during the evaluation of radio frequency (RF reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented.

  10. Metodologija postavljanja diferencijalnih jednačina pri istraživanju dinamičkih parametara konstrukcije lansirne rampe na vozilu točkašu / Methodology make of differential equations at investigation of dynamic parameters of constructions of launcher on vehicle

    Directory of Open Access Journals (Sweden)

    Vlado P. Đurković

    2007-07-01

    Full Text Available U radu se određuju optimalni parametri konstrukcije lansirne rampe: položaj tačke vešanja hidrocilindra na rampi, dužina i materijal rampe, koeficijent viskoznog trenja ulja u hidrocilindru, koeficijent krutosti lansirne rampe i hidrocilindra, poprečni presek rampe, itd. Radi toga postavlja se mehanički model sa tri stepena slobode kretanja i odgovarajući model u vidu sistema od tri nelinearne diferencijalne jednačine drugog reda. Numeričkom analizom dobijenog matematičkog modela (primenom programskog jezika Compaq Visual Fortran, Version 6.5 dolazi se do optimalnosti pojedinih parametara. Dobijeni rezultati, predstavljeni u grafičkoj formi, mogu da budu veoma korisni projektantima raketnih lansera, kako stabilnih, tako i mobilnih, pri razvoju novih konstrukcija i modifikaciji postojećih. / This paper determines optimal construction parametrics of a missile launcher place of hydro-cylinder on launcher, length and material of ramp of launcher coefficient of the viscosity of friction oil in hydro-cylinder, coefficient of stiffness of launcher and hydro-cylinder, cross-section of launcher etc. In this purpose appointment mechanical model with three degrees of freedom motion and analogous model of system of three nonlinear differential equation second order. Numerical analysis obtained mathematical model (programming with language Compaq Visual Fortran, Version 6.5 coming to optimal parameters. Obtained results that are presented in graphical shapes can be very useful for designing stable and mobile missile launchers, both for development of new constructions and modification of existing structures.

  11. High radiation tolerance of InAs/AlSb high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Weaver, B.D.; Boos, J.B.; Papanicolaou, N.A.; Bennett, B.R.; Park, D.; Bass, R.

    2005-01-01

    InAs/AlSb-based high-electron-mobility transistors (HEMTs) were irradiated with 2 MeV protons. Radiation damage caused the source-drain current I ds to decrease nearly linearly with fluence Φ at a rate of Δ[I ds (Φ)/I ds (0)]/ΔΦ≅7x10 -16 cm 2 . Radiation-induced decreases in I ds have been observed for other HEMT material systems, and have been attributed to high-efficiency defect-induced scattering of carriers out of the two-dimensional electron gas. However, in the InAs/AlSb system the rate of decrease of I ds is about 140 times less than that for typical GaAs/AlGaAs HEMTs. An explanation is presented in which the high radiation tolerance of InAs/AlSb HEMTs is related to carrier reinjection and the unusually large energy offset between the AlSb barriers and the InAs quantum well

  12. Enhanced Hole Mobility and Density in GaSb Quantum Wells

    Science.gov (United States)

    2013-01-01

    electron-mobility transistors (HEMTs) with InAs channels and AlSb barriers operate at substan- tially lower power than similar circuits based upon GaAs...the XRD scan for sample 4L, the piece labeled L in Fig. 2. The buffer layer consisted of 888 periods of (4.0 s AlSb / 1.0 s AlAs). Peaks are visible...to match the experimental peak positions, and is shown below the experimental data in Fig. 3. The layer thicknesses were 0.33 nm AlAs and 1.30 nm AlSb

  13. Robust Epitaxial Al Coating of Reclined InAs Nanowires.

    Science.gov (United States)

    Kang, Jung-Hyun; Grivnin, Anna; Bor, Ella; Reiner, Jonathan; Avraham, Nurit; Ronen, Yuval; Cohen, Yonatan; Kacman, Perla; Shtrikman, Hadas; Beidenkopf, Haim

    2017-12-13

    It was recently shown that in situ epitaxial aluminum coating of indium arsenide nanowires is possible and yields superior properties relative to ex-situ evaporation of aluminum ( Nat. Mater. 2015 , 14 , 400 - 406 ). We demonstrate a robust and adaptive epitaxial growth protocol satisfying the need for producing an intimate contact between the aluminum superconductor and the indium arsenide nanowire. We show that the (001) indium arsenide substrate allows successful aluminum side-coating of reclined indium arsenide nanowires that emerge from (111)B microfacets. A robust, induced hard superconducting gap in the obtained indium arsenide/aluminum core/partial shell nanowires is clearly demonstrated. We compare epitaxial side-coating of round and hexagonal cross-section nanowires and find the surface roughness of the round nanowires to induce a more uniform aluminum profile. Consequently, the extended aluminum grains result in increased strain at the interface with the indium arsenide nanowire, which is found to induce dislocations penetrating into round nanowires only. A unique feature of proposed growth protocol is that it supports in situ epitaxial deposition of aluminum on all three arms of indium arsenide nanowire intersections in a single growth step. Such aluminum coated intersections play a key role in engineering topologically superconducting networks required for Majorana based quantum computation schemes.

  14. Vaganačka pećina

    OpenAIRE

    Forenbaher, S.; Vranjican, P.; Pandžić

    1985-01-01

    Sondažno iskopavanje Vaganačke pećine na primorskoj padini Velebita pokazalo je da se radi o stratificiranom lokalitetu sa kontinuitetom naseljavanja od mezolitika do željeznog doba. Mezolitički i neolitički materijal se uklapa u poznatu sliku tih razdoblja na Jadranu. Dobro je zastupljeno brončano doba, gdje je na stratificiranom materijalu moguće pratiti ukrštanje kulturnih utjecaja s područja jadranskog primorja i iz zaleđa, naročito Like.

  15. Room-Temperature Dephasing in InAs Quantum Dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

    2000-01-01

    The room temperature dephasing in InAs/InGaAs/GaAs self-assembled quantum dots, embedded in a waveguide for laser applications, is measured using two independent methods: spectral hole burning and four-wave mixing. Without the application of bias current for electrical carrier injection......, a dephasing time of ~260 fs, weakly dependent on the optical excitation density, is found and attributed to phonon interaction. The application of bias current, leading to population inversion in the dot ground state and optical gain, strongly decreases the dephasing time to less than 50 fs, likely due...

  16. InAs Band-Edge Exciton Fine Structure

    Science.gov (United States)

    2015-07-29

    with a 100x near- infrared corrected long working distance objective (Mi- tutoyo, Plan Apo NIR), using a 640 nm pulsed diode laser for excitation...Fernée, M. J.; Louyer, Y.; Tamarat, P.; Lounis, B. Comment on “Spin-Flip Limited Exciton Dephasing in CdSe/ ZnS Colloidal Quantum Dots”. Phys. Rev. Lett... Spectroscopy of single nanocrystals. Chem. Soc. Rev. 2014, 43, 1311–1337. [10] Bruns, O. T.; Bischof, T. S.; Harris, D. K.; Shi, Y.; Riedemann, L.; Reiberger

  17. Syndrome! Polysplenia ina 10 year old girl | Ganiyu | Tropical ...

    African Journals Online (AJOL)

    We present a case of 10 year old patient with polysplenia, situs inversus abdominus, malrotation of bowel and renal anomalies. Polyspenia Syndrome refers to presence of two or more spleens associated with various abnormalities in chest and abdomen. Situs inversus is present in about 20% of cases Polysplenia ...

  18. ZnO HEMTs on Flexible Substrates for Large Area Monolithic Antenna Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — AMBP Tech will implement Zinc Oxide high mobility material technology it has developed specifically for flexible electronics into a direct write process onto large...

  19. Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Vinichenko, A. N., E-mail: vanaxel@gmail.com; Gladkov, V. P.; Kargin, N. I.; Strikhanov, M. N.; Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation)

    2014-12-15

    The effect of the hybridization of quantum states on electron transport in a two-barrier quantum well δ-doped through a spacer layer at the limit of heavy doping is shown theoretically and experimentally. A method for increasing the electron mobility in the quantum well by suppressing the tunnel coupling with the donor region through the introduction of an AlAs nanobarrier into the spacer layer is proposed. It is experimentally shown that, in the samples with a shallow quantum well, the AlAs nanobarrier introduced into the spacer layer provides a larger than threefold increase in the electron mobility at low temperatures.

  20. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  1. Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

    Science.gov (United States)

    2016-10-01

    theoretically chemical isotope resolution capability and atomic spatial resolution. As such, atom probe tomography is potentially uniquely capable...Furthermore, this would lead to measurement artifacts because the ions would not be accelerated across the electric field in the manner expected, which...electric field and lead to an artifact spectrum such as the one shown in Figure 7, where most of the peaks cannot be identified. Eventually, adjustments

  2. An Error Analysis of Hot Electron Temperatures Collected from Cross Sectioned GaN HEMTs (Preprint)

    Science.gov (United States)

    2017-07-03

    FIG. 1. When plotted together, the five emission spectra demonstrate the experimental reproducibility of the data col- lection system. III. RESULTS... Emission spectra were collected from a set of five de- vices over a photon energy range of 1.0 eV to 3.0 eV. The raw data collected from these devices...desired reliability models. We report here on the extraction of hot electron temperatures from electroluminescence spectra , which is attributed to

  3. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure ...

    Indian Academy of Sciences (India)

    2017-03-08

    Mar 8, 2017 ... dimensional ATLAS device simulator. Gate length reduction can be used to improve the transconductance and gate capacitance in a transistor. However, it is worth noting that decrease in gate length causes short channel effects such as drain-induced barrier lowering. (DIBL). DIBL is an effect that changes ...

  4. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

    International Nuclear Information System (INIS)

    Du Jiangfeng; Wang Kang; Yin Chenggong; Liu Yang; Yu Qi; Xu Peng; Feng Zhihong; Dun Shaobo

    2015-01-01

    Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model. (paper)

  5. Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

    Science.gov (United States)

    Chen, Nie-Chuan; Tseng, Chien-Yuan; Lin, Hsin-Tung

    2009-01-01

    The effects of surface state on sheet carrier density in the Al 0.17Ga 0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×10 13 e/cm 2. However, this value was inconsistent with the capacitance-voltage ( C- V) measurements. This carrier density varied with the surface conditions of the samples that were prepared for Hall and C- V measurements. To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined.

  6. Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

    Science.gov (United States)

    Jiangfeng, Du; Peng, Xu; Kang, Wang; Chenggong, Yin; Yang, Liu; Zhihong, Feng; Shaobo, Dun; Qi, Yu

    2015-03-01

    Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model. Project supported by the National Natural Science Foundation of China (Nos. 61376078, 61274086) and the Fundamental Research Funds for the Central Universities of China (No. ZYGX2012J041).

  7. Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

    Science.gov (United States)

    Green, D. S.; Gibb, S. R.; Hosse, B.; Vetury, R.; Grider, D. E.; Smart, J. A.

    2004-12-01

    High-quality GaN epitaxy continues to be challenged by the lack of matched substrates. Threading dislocations that result from heteroepitaxy are responsible for leakage currents, trapping effects, and may adversely affect device reliability. We have studied the impact of AlN nucleation conditions on the density and character of threading dislocations on SiC substrates. Variation of the nucleation temperature, V/III ratio, and thickness are seen to have a dramatic effect on the balance between edge, screw and mixed character dislocation densities. Electrical and structural properties have been assessed by AFM and XRD on a material level and through DC and RF performance at the device level. The ratio between dislocation characteristics has been established primarily through comparison of symmetric and asymmetric XRD rocking curve widths. The effect of each dislocation type on leakage current, RF power and reliability at 2 GHz, the targeted band for cell phone infrastructure applications, is discussed.

  8. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure ...

    Indian Academy of Sciences (India)

    2017-03-08

    drain capacitance, short channel effects and DC ... (Tr) of the recessed region of the barrier at the source side are the same as those of the insulator at the drain side. ..... produces a vertical electric field on the carriers moving.

  9. Thermal Modeling of GaN HEMTs on Sapphire and Diamond

    National Research Council Canada - National Science Library

    Salm, III, Roman P

    2005-01-01

    ... to diamond through the use of commercially available Silvaco software for modeling and simulation. The unparalleled thermal properties of diamond are expected to dramatically decrease device temperatures and increase component lifetimes and reliability.

  10. AlGaN/GaN-based HEMT on SiC substrate for microwave ...

    Indian Academy of Sciences (India)

    THe two-dimensional electron gas (2DEG) transport properties are discussed by solving Schödinger and Poison equations self-consistently resulting in various subbands having electron eigenvalues. From DC characteristics, the saturation drain currents are measured to be 600 mA/mm and 550 mA/mm for Si3N4 and SiO2 ...

  11. RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures

    International Nuclear Information System (INIS)

    Hallén, Anders; Moschetti, Giuseppe

    2014-01-01

    Electrical isolation of InAs/AlSb high electron mobility transistors has been achieved by the ion implantation isolation technique. The multilayered structures are grown by molecular beam epitaxy on GaAs substrates. The optimal isolation is provided by damaging patterned areas by 100 keV Ar ions implanted at room temperature using fluence of 2 × 10 15 cm −2 , and then annealing the samples in 365 °C for 30 min. The damage build-up and annealing is studied by channeling Rutherford backscattering spectrometry (RBS) and compared to sheet resistance measurements. Only a low level of damage annealing can be seen in RBS for the post-implant annealed samples, but for Ar fluence higher than 2 × 10 14 cm −2 , a strong electrical resistivity increase can still be achieved

  12. RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Hallén, Anders, E-mail: ahallen@kth.se [KTH Royal Institute of Technology, ICT, P.O. Box Electrum 229, SE 164 40 Kista (Sweden); Moschetti, Giuseppe [Chalmers University of Technology, Microtechnology and Nanoscience-MC2, SE-412 96 Gothenburg (Sweden)

    2014-08-01

    Electrical isolation of InAs/AlSb high electron mobility transistors has been achieved by the ion implantation isolation technique. The multilayered structures are grown by molecular beam epitaxy on GaAs substrates. The optimal isolation is provided by damaging patterned areas by 100 keV Ar ions implanted at room temperature using fluence of 2 × 10{sup 15} cm{sup −2}, and then annealing the samples in 365 °C for 30 min. The damage build-up and annealing is studied by channeling Rutherford backscattering spectrometry (RBS) and compared to sheet resistance measurements. Only a low level of damage annealing can be seen in RBS for the post-implant annealed samples, but for Ar fluence higher than 2 × 10{sup 14} cm{sup −2}, a strong electrical resistivity increase can still be achieved.

  13. Uso da gonadotrofina coriônica eqüina em receptoras de embriões para avaliar o incremento da progesterona endógena no dia da inovulação e sua correlação com a taxa de prenhez Use of equine chorionic gonadotrophin in heifers embryo receptors to evaluate the increment of endogenous progesterone in the inovulation day in relation to pregnancy rate

    Directory of Open Access Journals (Sweden)

    Carlos Martins Rodrigues

    2002-04-01

    Full Text Available O experimento foi realizado com a finalidade de avaliar a influência da administração de gonadotrofina coriônica eqüina (eCG em receptoras de embrião na formação de corpos lúteos acessórios e a correlação com o índice de prenhez. Utilizaram-se 64 novilhas de 18 a 30 meses de idade, mestiças Simental, com peso médio de 400 kg, as quais foram avaliadas por palpação retal, entre os dias 7 e 12 após a manifestação do cio, considerado como cio base. Neste intervalo de 7 a 12 dias após o cio, definido como dia zero (D0, os animais que se encontravam com corpo lúteo fisiológico foram divididos, aleatoriamente, em 4 tratamentos, sendo que os animais do tratamento 1 (controle, n=21, receberam solução fisiológica, via intramuscular (IM; no tratamento 2 (n=14 receberam 200 UI de eCG (FOLLIGON® - Intervet, via IM; no tratamento 3 (n=16, receberam 400 UI de eCG, via IM; e no tratamento 4 (n=13, receberam 600 UI de eCG, via IM. Transcorridos 2 dias (D2 da aplicação do eCG, administrou-se 2 mL de prostaglandina F2 alfa (PROSOLVIN® - Intervet por animal. Em seguida, observou-se a manifestação de cio e, 7 dias após a sua detecção, avaliou-se os animais, por ultrassonografia, para seleção das fêmeas aptas a receber os embriões congelados. Vinte e três dias após a inovulação, procedeu-se ao diagnóstico de prenhez por ultrassonografia. Não houve diferença (P > 0,05 para a taxa de prenhez. Concluiu-se que o uso de eCG em receptoras de embrião congelado não melhorou os índices de aproveitamento das receptoras nem a taxa de prenhez.The experiment was carried out to evaluate the influence of pregnant Mare Serum Gonadotrophin (eCG administration in embryo receptors on the formation of accessory corpus luteum and correlation with the pregnancy rate. Sixty-four beef cattle heifers -18 to 30 months old were used, ½ Simental, with 400 kg of average live weight. The heifers were evaluated through rectal palpation between days

  14. Low temperature transport in p-doped InAs nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal

    2013-01-01

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

  15. Persistent Optical Nuclear Spin Narrowing in a Singly Charged InAs Quantum Dot

    Science.gov (United States)

    2012-02-01

    hole envelope wave function, Ah is the hyper- fine coupling constant, and c0 is the lattice parameter. Since the external magnetic field is in the x̂...February 2012 / J. Opt. Soc. Am. B A121 where γs (γt) is the spin (trion) dephasing rate, χ is half the pump Rabi frequency ΩR (ΩR # μEℏ , where μ is...probe ab- sorption at the dark state dip (αdip) and the Rabi sideband (αpeak): αdip # α0 χ2γs & γt$γ2s% χ4 & 2χ2γtγs & γ2t γ2s ; (11) αpeak # α0 χ2γs

  16. Electronic fine structure and recombination dynamics in single InAs quantum dots

    International Nuclear Information System (INIS)

    Seguin, R.

    2008-01-01

    In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

  17. Electronic fine structure and recombination dynamics in single InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Seguin, R.

    2008-01-28

    In the work at hand single InAs/GaAs quantum dots (QDs) are examined via cathodoluminescence spectroscopy. A thorough analysis of the spectra leads to an unambiguous assignment of the lines to the decay of specific excitonic complexes. A special aspect of the Coulomb interaction, the exchange interaction, gives rise to a fine structure in the initial and final states of an excitonic decay. This leads to a fine structure in the emission spectra that again is unique for every excitonic complex. The exchange interaction is discussed in great detail in this work.QDs of different sizes are investigated and the influence on the electronic properties is monitored. Additionally, the structure is modified ex situ by a thermal annealing process. The changes of the spectra under different annealing temperatures are traced. Finally, recombination dynamics of different excitonic complexes are examined by performing time-resolved cathodoluminescence spectroscopy. (orig.)

  18. Electrical, Optical and Structural Studies of INAS/INGASB VLWIR Superlattices

    Science.gov (United States)

    2013-01-01

    which is in agreement with theoretical calculations of based on published values of elastic constants. The InGaSb-on-InAs and InAs-on-InGaSb interfaces...Probing the interface fluctuations in semiconductor superlattices using a magneto -transport technique,” Superlattices Microstructructures 5, 225-228

  19. Síndrome de cauda eqüina produzida por melanoma

    Directory of Open Access Journals (Sweden)

    J. Lamartine de Assis

    Full Text Available The authors present a case of melanoma of the cauda equina which evolved during two years, starting with pain in the lower extremities and becoming at length a cauda equina syndrome, with bilateral sciatic pain, motor and sensorial signs and bladder and rectal disturbances. The tumor was only partially removed, on account of its infiltrating character. The patient died eleven months later. He had X-ray therapy soon after the operation. Autopsy was not performed but considering the clinical data, the localization and the type of the tumor, authors believe it connected by a primary melanoma of the lombar leptomeninges. A brief review of the literature is made.

  20. Constructing the Self in/as Thirdspace: New Potentials for Identity Exploration in the Composition Classroom

    Science.gov (United States)

    Lauer, Claire

    2009-01-01

    In this article the author introduces a concept she calls "Thirdspace identity construction," which instructors can use to understand what happens in students' texts when such ever-open possibilities for identity exploration are allowed. This concept borrows from the work of critical geographer Edward Soja. Soja's "Thirdspace" represents a dynamic…

  1. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    DEFF Research Database (Denmark)

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

    2011-01-01

    The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende,...... parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell....

  2. Energy Band Structure Studies Of Zinc-Blende GaAs and InAs ...

    African Journals Online (AJOL)

    Energy band structures, density of states and structural parameters of all the compounds are presented and discussed in context with available theoretical and experimental studies. Our results show that the energy band gaps of the semiconductors are underestimated. But overall our results show reasonable agreement ...

  3. Tapa firma tituleeriti halvimaks tööandjaks / Marina Loštšina

    Index Scriptorium Estoniae

    Loštšina, Marina

    2006-01-01

    Ilmunud ka: Pärnu Postimees 21. märts lk. 9. Eesti Transpordi- ja Teetöötajate Ametiühing andis aasta halvima tööandja tiitli OÜ-le Tapa Autobussipark üleriigilise palgaleppe pideva eiramise eest

  4. Elemental composition of 'normal' and Alzheimer brain tissue by INA and PIXE analyses

    International Nuclear Information System (INIS)

    Stedman, J.D.; Spyrou, N.M.

    1997-01-01

    Instrumental methods based on the nuclear and atomic properties of the elements have been used for many years to determine elemental concentrations in a variety of materials for biomedical, industrial and environmental applications. These methods offer high sensitivity for accurate trace element measurements, suffer few interfering or competing effects. Present no blank problems and are convenient for both research and routine analyses. The present article describes the use of two trace element techniques. Firstly the use of activation of stable nuclei irradiated by neutrons in the core of a low power research reactor as a means of detection of elements through the resulting gamma-rays emitted. Secondly, the observations of the interactions of energetic ion beams with the material in order to identify elemental species. Over recent years there has been some interest in determining the elemental composition of 'normal' and Alzheimer affected brain tissue, however literature findings are inconsistent. Possible reasons for discrepancies need to be identified for further progress to be made. Here, post-mortem tissue samples, provided by the Alzheimer's Disease Brain Bank, Institute of Psychiatry, London, were taken from the frontal, occipital, parietal and temporal lobes of both hemispheres of brains from 13 'normal' and 19 Alzheimer subjects. The elemental composition of the samples was determined using the analytical techniques of INAA (instrumental neutron activation analysis), RBS (Rutherford back-scattering) and PIXE (particle induced x-ray emission). The principal findings are summarised here. (author)

  5. Photosynthetic Efficiency as Bioindicator of Environmental Pressure inA. halleri.

    Science.gov (United States)

    Sitko, Krzysztof; Rusinowski, Szymon; Kalaji, Hazem M; Szopiński, Michał; Małkowski, Eugeniusz

    2017-09-01

    In earlier ecophysiological studies that were conducted on Arabidopsis halleri plants, scientists focused on the mechanisms of Cd and Zn hyperaccumulation but did not take into consideration the environmental factors that can significantly affect the physiological responses of plants in situ. In this study, we investigated A. halleri that was growing on two nonmetalliferous and three metalliferous sites, which were characterized by different environmental conditions. We compared these populations in order to find differences within the metallicolous and nonmetallicolous groups that have not yet been investigated. The concentrations of several elements in the plant and soil samples also were investigated. To our knowledge, the concentration and fluorescence of chlorophyll were measured for A. halleri in situ for the first time. Our study confirmed the hyperaccumulation of Cd and Zn for each metallicolous population. For the metallicolous populations, the inhibition of parameters that describe the efficiency of the photosynthetic apparatus with increasing accumulations of heavy metals in the shoots also was observed. It was found that the nonmetallicolous plant populations from the summit of Ciemniak Mountain had larger antenna dimensions and chlorophyll content but a lower percentage of active reaction centers. To our knowledge, in this study, the internal high physiological diversity within the populations that inhabit metalliferous and nonmetalliferous sites is presented for the first time. © 2017 American Society of Plant Biologists. All Rights Reserved.

  6. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    Energy Technology Data Exchange (ETDEWEB)

    Keizer, J. G.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands); Ulloa, J. M.; Utrilla, A. D. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  7. A soft lithographic approach to fabricate InAs nanowire field-effect transistors

    DEFF Research Database (Denmark)

    Lee, S. H.; Shin, S.-H.; Madsen, Morten

    2018-01-01

    The epitaxial layer transfer process was previously introduced to integrate high-quality and ultrathin III-V compound semiconductor layers on any substrate. However, this technique has limitation for fabrication of sub-micron nanoribbons due to the diffraction limit of photolithography. In order ...

  8. Study on neutron diffusion and time dependence heat ina fluidized bed nuclear reactor

    International Nuclear Information System (INIS)

    Vilhena, M.T. de.

    1988-01-01

    The purpose of this work is to model the neutron diffusion and heat transfer for a Fluidized Bed Nuclear Reactor and its solution by Laplace Transform Technique with numerical inversion using Fourier Series. Also Gaussian quadrature and residues techniques were applied for numerical inversion. The neutron transport, diffusion, and point Kinetic equation for this nuclear reactor concept are developed. A matricial and Taylor Series methods are proposed for the solution of the point Kinetic equation which is a time scale problem of Stiff type

  9. new perspectives on the anglo-boer war by ina snyman, ian ...

    African Journals Online (AJOL)

    Arianne

    Boer War of 1899-1902. Therefore, they included contributions from different disciplines, but with the main emphasis still on historical writing. They strived to continue the tradition to regard all historical debate as temporary and within the ...

  10. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

    2011-01-01

    characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

  11. Interna konzistencija i retest pouzdanost hrvatske inačice PAQ-C upitnika

    OpenAIRE

    Podnar, Hrvoje; Kunješić, Mateja; Radman, Ivan

    2017-01-01

    The aim of the study was to determine internal consistency and retest reliability of the Croatian version of PAQ-C on a sample of 6-10 years old children and to report physical activity levels of elementary school pupils. The same set of questions was administered to the pupils on two different occasions, three weeks apart. Both testing rounds for 8-10 years old pupils were conducted at school in the presence of an experienced researcher. In contrast, the 6-8 years old pupils took the questio...

  12. Selective optical pumping of charged excitons in unintentionally doped InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Munoz-Matutano, Guillermo; MartInez-Pastor, Juan [Instituto de Ciencias de los Materiales, Universitat de Valencia, PO Box 22085, 46071 Valencia (Spain); Alen, Benito [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Seravalli, Lucca; Frigeri, Paola; Franchi, Secondo [Istituto dei Materiali per l' Elettronica e il Magnetismo (CNR), Parco delle Scienze 37/a, I-43100 Parma (Italy)], E-mail: Guillermo.munoz@uv.es

    2008-04-09

    We have investigated the selective optical pumping of charged excitonic species in a sample containing quantum dots of different sizes and low areal density by photoluminescence and excitation of the photoluminescence microspectroscopy. We study the selective optical excitation of negatively charged excitons as an alternative to commonly used electrical methods. We demonstrate that under resonant excitation in impurity related bands, the selective pumping efficiency can be as high as 85% in small quantum dots having one electron shell and emitting at around 930 nm, and around 65% in big quantum dots having four electron shells and emitting at 1160 nm.

  13. Thermal activated carrier transfer between InAs quantum dots in very low density samples

    Energy Technology Data Exchange (ETDEWEB)

    MartInez-Pastor, J P; Munoz-Matutano, G; Canet-Ferrer, J; Fuster, D [Instituto de Ciencias de los Materiales, Universitat de Valencia, POBox 22085, 46071 Valencia (Spain); Alen, B [Instituto de Microelectronica de Madrid (IMM-CNM-CSIC), Isaac Newton 8, E-28760, Tres Cantos Madrid (Spain); Trevisi, G; Seravalli, L; Frigeri, P; Franchi, S, E-mail: Juan.Mtnez.Pastor@uv.e [CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma (Italy)

    2010-02-01

    In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/{mu}m{sup 2}. We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.

  14. Tunnel field-effect transistor using InAs nanowire/Si heterojunction

    Science.gov (United States)

    Tomioka, Katsuhiro; Fukui, Takashi

    2011-02-01

    We report on fabrication of tunnel field-effect transistor with III-V nanowire (NW)/Si heterojunction and surrounding-gate structure. The device fabricated by selective-area growth of an n+-InAs/undoped-InAs axial NW on a p+-Si(111) substrate showed switching behavior with an average subthreshold slope (SS) of 104 mV/dec under reverse bias condition. The switching behavior appeared under small supply voltage (Vds=50 mV). Transmission electron microscopy revealed misfit dislocation formed at the interface degraded the SS and ON-state current. Coherent growth without misfit dislocations would promise realization of steep-slope transistor with a SS of <60 mV/dec.

  15. RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION

    Directory of Open Access Journals (Sweden)

    Dhiyauddin Ahmad Fauzi

    2017-05-01

    Full Text Available In addition to their useful optoelectronics functions, gallium nitride (GaN and quantum dots (QDs based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED and InAs/GaAs dot-in-a well (DWELL samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V and capacitance-voltage (C-V electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

  16. UVEITIS INA RHEUMATOLOGISTS PRACTICE: A ROLE OF TUMOR NECROSIS FACTOR-а INHIBITORS

    Directory of Open Access Journals (Sweden)

    Sergey Valentinovich Moiseyev

    2009-01-01

    Full Text Available Uveitis frequently develops in patients with ankylosing spondylitis (AS and other autoimmune diseases. It is occasionally characterized by a severe recurrent course and untreatable with systemic glucocorticoids (GC and standard immunosuppressive agents. The results of (mainly small clinical trials, as well as some observations suggest that therapy with tumor necrosis factor-а (TNF-а inhibitors is effective in such patients. There is the strongest evidence that they are beneficial in treating recurrent uveitis in patients with AS, infliximab having some efficacy advantages over etanercept and adalimumab. Accordingly, chronic uveitis in AS can be considered as an additional argument in favor of the use of TNF-а inhibitors. Furthermore, treatment with drugs of this group is warranted in severe uveitis refractory to GC and immunosuppressants. It is conceivable that in some forms of uveitis, for example, in patients with Behcet's disease, treatment with TNF-а inhibitors should be initiated at an earlier stage as the efficacy of standard immunosuppressants is generally limited

  17. In situ laser heating and radial synchrotron X-ray diffraction ina diamond anvil cell

    Energy Technology Data Exchange (ETDEWEB)

    Kunz, Martin; Caldwell, Wendel A.; Miyagi, Lowell; Wenk,Hans-Rudolf

    2007-06-29

    We report a first combination of diamond anvil cell radialx-ray diffraction with in situ laser heating. The laser-heating setup ofALS beamline 12.2.2 was modified to allow one-sided heating of a samplein a diamond anvil cell with an 80 W yttrium lithium fluoride laser whileprobing the sample with radial x-ray diffraction. The diamond anvil cellis placed with its compressional axis vertical, and perpendicular to thebeam. The laser beam is focused onto the sample from the top while thesample is probed with hard x-rays through an x-ray transparentboron-epoxy gasket. The temperature response of preferred orientation of(Fe,Mg)O is probed as a test experiment. Recrystallization was observedabove 1500 K, accompanied by a decrease in stress.

  18. Reciprocal Modulation of IK1-INa Extends Excitability in Cardiac Ventricular Cells.

    Science.gov (United States)

    Varghese, Anthony

    2016-01-01

    The inwardly rectifying potassium current (I K1 ) and the fast inward sodium current (I Na ) are reciprocally modulated in mammalian ventricular myocytes. An increase in the expression of channels responsible for one of these two currents results in a corresponding increase in expression of the other. These currents are critical in the propagation of action potentials (AP) during the normal functioning of the heart. This study identifies a physiological role for I K1 -I Na reciprocal modulation in ventricular fiber activation thresholds and conduction. Simulations of action potentials in single cells and propagating APs in cardiac fibers were carried out using an existing model of electrical activity in cardiac ventricular myocytes. The conductances, G K1 , of the inwardly rectifying potassium current, and G Na , of the fast inward sodium current were modified independently and in tandem to simulate reciprocal modulation. In single cells, independent modulation of G K1 alone resulted in changes in activation thresholds that were qualitatively similar to those for reciprocal G K1 -G Na modulation and unlike those due to independent modulation of G Na alone, indicating that G K1 determines the cellular activation threshold. On the other hand, the variations in conduction velocity in cardiac cell fibers were similar for independent G Na modulation and for tandem changes in G K1 -G Na , suggesting that G Na is primarily responsible for setting tissue AP conduction velocity. Conduction velocity dependence on G K1 -G Na is significantly affected by the intercellular gap junction conductance. While the effects on the passive fiber space constant due to changes in both G K1 and the intercellular gap junction conductance, G gj , were in line with linear cable theory predictions, both conductances had surprisingly large effects on fiber activation thresholds. Independent modulation of G K1 rendered cardiac fibers inexcitable at higher levels of G K1 whereas tandem G K1 -G Na changes allowed fibers to remain excitable at high G K1 values. Reciprocal modulation of the inwardly rectifying potassium current and the fast inward sodium current may have a functional role in allowing cardiac tissue to remain excitable when I K1 is upregulated.

  19. Study of electron transport in n-type InAs substrate by Monte Carlo ...

    African Journals Online (AJOL)

    ... et de l\\'effet de la concentration (dopage). Les résultats que nous avons obtenus s\\'avèrent comparables à ceux de la théorie. Mots-clés: Méthode de Monte Carlo, interactions, structure de bande, composants III-V. Abstract The microelectronic comprehension of the phenomena which describes the behavior of the carriers ...

  20. Černý výpadek versus zelená elektřina

    Czech Academy of Sciences Publication Activity Database

    Řípa, Milan

    -, Květen (2015) Institutional support: RVO:61389021 Keywords : Tokamak * stellarator * wind * eolika * Fritz Wagner Subject RIV: BL - Plasma and Gas Discharge Physics http://www.vedaprozivot.cz/sd/novinky/hlavni-stranka/150507_cerny-vypadek-versus-elektrina.html

  1. Quantum Sensing of Mechanical Motion with a Single InAs Quantum Dot

    Science.gov (United States)

    2017-03-01

    manipulate s the entangle hanical racker1, Mi a E. Econo el Scheibn arch Laborat e Solutions, I at the Naval ysics, Virginia es...stal waveguide the membrane h resolution ed by sending cavity with a . , resolu single photo ...ability to as enhance the this platform . . . .

  2. Shape, strain, and ordering of lateral InAs quantum dot molecules

    International Nuclear Information System (INIS)

    Krause, B.; Metzger, T.H.; Rastelli, A.; Songmuang, R.; Kiravittaya, S.; Schmidt, O. G.

    2005-01-01

    The results of an x-ray study on freestanding, self-assembled InAs/GaAs quantum dots grown by molecular beam epitaxy are presented. The studied samples cover the range from statistically distributed single quantum dots to quantum dot bimolecules, and finally to quantum dot quadmolecules. The x-ray diffraction data of the single quantum dots and the bimolecules, obtained in grazing incidence geometry, have been analyzed using the isostrain model. An extended version of the isostrain model has been developed, including the lateral arrangement of the quantum dots within a quantum dot molecule and the superposition of the scattering from different parts of the dots. This model has been applied to the scattering maps of all three samples. Quantitative information about the positions of the dots, the shape, and the lattice parameter distribution of their crystalline core has been obtained. For the single dot and the bimolecule, a strong similarity of the shape and lattice parameter distribution has been found, in agreement with the similarity of their photoluminescence spectra

  3. Near-surface nanoscale InAs Hall cross sensitivity to localized magnetic and electric fields.

    Science.gov (United States)

    Folks, L; Troup, A S; Boone, T D; Katine, J A; Nishioka, M; Grobis, M; Sullivan, G J; Ikhlassi, A; Field, M; Gurney, B A

    2009-06-24

    We have measured the room temperature response of nanoscale semiconductor Hall crosses to local applied magnetic fields under various local electric gate conditions using scanning probe microscopy. Near-surface quantum wells of AlSb/InAs/AlSb, located just 5 nm from the heterostructure surface, allow very high sensitivity to localized electric and magnetic fields applied near the device surfaces. The Hall crosses have critical dimensions of 400 and 100 nm, while the mean free path of the carriers is about 160 nm; hence the devices nominally span the transition from diffusive to quasi-ballistic transport. With certain small gate voltages (V(g)) the devices of both sizes are strongly responsive to the local magnetic field at the center of the cross, and the results are well described using finite element modeling. At high V(g), the response to local magnetic fields is greatly distorted by strong electric fields applied near the cross corners. However we observe no change in behavior with the size of the device.

  4. Kanaka Maoli and Kamáāina Seascapes - Knowing Our Ocean Through Times of Change

    Science.gov (United States)

    Puniwai, N.

    2017-12-01

    In Hawaíi our oceans define us, we come from the ocean. Our oceans change, and we change with them, as we always have. By learning from people who are dependent on their environment, we learn how to observe and how to adapt. Through the lens of climate change, we interviewed respected ocean observers and surfers to learn about changes they have witnessed over time and the spatial scales and ocean conditions important to them. We looked at our ancient and historical texts to see what processes they recorded and the language they used to ascribe their observations, interactions and relationships to these places. Yet, we also integrate what our mechanical data sensors have recorded over recent time. By expanding our time scales of reference, knowledge sources, and collaborators, these methods teach us how our ancestors adapted and how climate change may impact our subsistence, recreation, and interactions with the environment. Managing complex seascapes requires the integration of multiple ways of knowing; strengthening our understanding of seascapes and their resiliency in this changing environment.

  5. Preliminary report on theNeurology workload ina central hospital in ...

    African Journals Online (AJOL)

    Motor symptoms were the most common presenting symptoms forming 64.1% followed by cranial nerves symptoms 27.6%. Stroke was the commonest encountered diagnosis seen in 20.7%, followed by epilepsy in 16.6%, headache in 9.6%, movement disorders in 7.7%, peripheral neuropathy in 3.6%, demylination in 1.8% ...

  6. Carrier multiplication and its reduction by photodoping in colloidal InAs quantum dots

    NARCIS (Netherlands)

    Pijpers, J. J. H.; Hendry, E.; Milder, M.T.W.; Fanciulli, R.; Savolainen, J.; Herek, J.L.; Vanmaekelbergh, D.A.M.|info:eu-repo/dai/nl/304829137; Ruhman, S.; Mocatta, D.; Oron, D.; Aharoni, A.; Banin, U.; Bonn, M.

    2007-01-01

    Carrier (exciton) multiplication in colloidal InAs/CdSe/ZnSe core-shell quantum dots (QDs) is investigated using terahertz time-domain spectroscopy, time-resolved transient absorption, and quasi-continuous wave excitation spectroscopy. For excitation by high-energy photons (~2.7 times the band gap

  7. Coherent versus incoherent dynamics in InAs quantum-dot active wave guides

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, W.; Hvam, Jørn Märcher

    2001-01-01

    Coherent dynamics measured by time-resolved four-wave mixing is compared to incoherent population dynamics measured by differential transmission spectroscopy on the ground-state transition at room temperature of two types of InAs-based quantum dots with different confinement energies. The measure......Coherent dynamics measured by time-resolved four-wave mixing is compared to incoherent population dynamics measured by differential transmission spectroscopy on the ground-state transition at room temperature of two types of InAs-based quantum dots with different confinement energies....... The measurements are performed with heterodyne detection on quantum-dot active wave guides to enhance the light-matter interaction length. An elastic nature of the measured dephasing is revealed which is independent of the dot energy level scheme....

  8. Leveraging Crystal Anisotropy for Deterministic Growth of InAs Quantum Dots with Narrow Optical Linewidths

    Science.gov (United States)

    2013-08-29

    organic chemical vapor deposition ( MOCVD ) growth on (111)B substrates without self-assembly.9,16 Despite the considerable promise of using prepatterned...burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing...data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden

  9. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    1.071 x 1013 , ↓ 24% 1.425 ↓ 57% 200E0 200 200 Å 0 1547 1.42x 1013 3.5 200E1 200 200 Å 1016 cm-2 695 ↓ 55% 1.23 x 1013 .865 ↓ 75% 500E0...Klein, P. B., and Kazior, T. E.. “Trapping effects in GaN and SiC microwave FETs.” Proceedings of the IEEE , 90, no. 6 (2002): 1048-1058. Borchi, E...34 IEEE 252 Transactions on Nuclear Science, 46, no. 4 (1999): 834. Calleja, E., Sánchez, F. J., Basak, D., Sánchez-García, M. A., Muñoz, E

  10. Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Lu, C Y; Chang, E Y; Bahat-Treidel, E; Hilt, O; Lossy, R; Chaturvedi, N; Würfl, J; Tränkle, G

    2010-01-01

    In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate—drain spacing, source—gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices

  11. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    Science.gov (United States)

    Bagnall, Kevin R.; Wang, Evelyn N.

    2016-06-01

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E2 high and A1 (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

  12. Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

    OpenAIRE

    Power, Maire; Pomeroy, James W; Otoki, Yohei; Tanaka, Takeshi; Wada, Jiro; Kuzuhara, Masaaki; Jantz, Wolfgang; Souzis, Andrew; Kuball, Martin H H

    2015-01-01

    The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro-thermometers and standard micro-Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon-doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20...

  13. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bagnall, Kevin R.; Wang, Evelyn N. [Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2016-06-15

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E{sub 2} high and A{sub 1} (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

  14. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Bagnall, Kevin R.; Wang, Evelyn N.

    2016-01-01

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E 2 high and A 1 (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

  15. A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

    Science.gov (United States)

    2015-07-01

    1995. [2] Q. Fan, J. Leach , and H. Mork circuit modeling for AlGaN/GaN method for determining circuit elem Proc. IEEE, vol.98, no. 7, pp. 1140 [3] W...microwave and RF circuits . Many approaches have been proposed in the last few decades for the extraction of small signal equivalent circuit parameters...ECPs), among which optimization based parameter extraction methods are commonly used due to their flexibility to various equivalent circuit

  16. Simultaneous determination of Ra-226, natural uranium and natural thorium by gamma-ray spectrometry INa(Ti), in solid samples.; Determinacion de U (Natural), Th (Natural) y Ra-226 en diversos materiales, mediante espectrometria con INa (TI)

    Energy Technology Data Exchange (ETDEWEB)

    Salvador, S.; Navarro, T.; Alvarez, A.

    1991-07-01

    A method has been developed to determine activities of Ra-226, natural uranium and natural thorium by gamma-ray spectrometry. The measurement system has been calibrated using standards specially prepared at the laboratory. It is necessary to assume secular equilibrium in the samples, between Ra-226 and Th-232 and its daughters nuclides, and between U-238 and its immediate daughter Th-234, as the photo peaks measured are those of the daughters. The results obtained indicate that this method can of ter replace the radiochemical techniques used to measure activities in this type of sample. The method has been successfully used to determine these natural isotopes in samples from uranium mills. (Author) 9 refs.

  17. Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices

    Science.gov (United States)

    2013-03-08

    Lackner, O.J. Pitts, M. Steger , A. Yang, M.L.W. Thewalt, and S.P. Watkins, Appl. Phys. Lett. 95, 081906 (2009). 11. D. Lackner, O.J. Pitts, S. Najmi...P. Sandhua, K.L. Kavanagha, A. Yang, M. Steger , M.L.W. Thewalt, Y. Wang, D.W. McComb, C.R. Bolognesi, and S.P. Watkins, J. Cryst. Growth 311, 3563...Huffaker, and Y.-H. Zhang, J. Vac. Sci. Technol. B. 30, 02B107 (2012). 16. D. Lackner, M. Steger , M.L.W. Thewalt, O.J. Pitts, Y.T. Cherng, S.P. Watkins

  18. 77 FR 50521 - Agency Information Collection Activities: Under Section 245A of the INA, Form I-687; Extension...

    Science.gov (United States)

    2012-08-21

    ... DEPARTMENT OF HOMELAND SECURITY U.S. Citizenship and Immigration Services [OMB Control Number 1615... Homeland Security (DHS), U.S. Citizenship and Immigration Services (USCIS) will be submitting the following... Coordination Division, Office of Policy and Strategy, U.S. Citizenship and Immigration Services, Department of...

  19. MODA ODAKLI İÇGÜDÜSEL SATIN ALMA DAVRANIŞINA ETKİ EDEN FAKTÖRLER

    Directory of Open Access Journals (Sweden)

    İlknur TÜFEKÇİ

    2014-10-01

    Full Text Available ÖZ: Günümüzde geleneksel birçok moda perakendecisi, esnek olmayan tedarik zinciri, onun yarattığı aşırı stok ve kâr kayıplarıyla mücadele ederken, hızlı moda perakendecileri esnek tedarik zinciri yönetimi ve yeni trendlere hızla uyum sağlayarak bu problemi avantaja dönüştürmüşlerdir. Bu sayede hızlı moda pazarını oluşturma ve geliştirmede büyük başarı sağlamışlardır. Dolayısıyla çalışma, bu pazarda yer alan tüketicilerin algı ve tutumlarının satın alma davranışlarına etkisini belirlemek amacıyla düzenlenmiştir. Çalışma Atatürk Üniversitesi’nde okuyan kız öğrencilere 387 adet anket uygulaması yoluyla gerçekleştirilmiştir. Araştırmanın amaçları doğrultusunda öncelikle hızlı moda perakendeciliğine yönelik tutum, kıtlık algısı, düşük fiyat algısı ve tükenebilir algısının moda odaklı içgüdüsel satın alma davranışı üzerine etkisini belirlemek için çoklu regresyon analizi yapılmıştır. Sonrasında ise çok kriterli karar verme tekniklerinden TOPSIS yöntemi ile bu değişkenlerin önem sıralaması belirlenmiştir. Söz konusu değişkenlerin moda odaklı içgüdüsel satın alma üzerinde anlamlı bir etkiye sahip olduğu ve kriterler arasında en önemi etkiyi “tükenebilir algısı”nın taşıdığı belirlenmiştir. Anahtar Kelimeler: Hızlı Moda, Moda Odaklı İçgüdüsel Satın Alma, TOPSIS. ABSTRACT: Many traditional fashion retailer are struggling with inflexible supply chain and the excess inventory and profit loss due to this inflexibility. But, these problems have been converted into advantages by fast fashion retailers, via adapting quickly to new trends and flexible supply chain management. In this way, they have achieved great success which is the creation of the fast fashion market and development. Therefore, the aim of this study is to determine consumers' perceptions and attitudes effect on purchase behavior in this market. In the study, questionnaires were applied to 387 female students studying at the Atatürk University. For purposes of the study; firstly multiple regression analysis was applied to determine attitudes towards fast fashion retailing, perceived scarcity, perceived low price and the perceived perishability effect on fashion-oriented impulse buying behavior. Then, variables have been ranked in terms of importance level obtained by TOPSIS which is multi-criteria decision making techniques. As a result, independent variables were found have a significant effect on fashion-oriented impulse buying and perceived perishability has the most significant effect in all of other criteria. Keywords: Fast Fashion, Fashion-Oriented Impulse Buying Behavior, TOPSIS.

  20. Usewear analysis of Mesolithic and Neolithic stone tools from Mala Triglavca, Trhlovca and Pupičina peć

    Directory of Open Access Journals (Sweden)

    Simona Petru

    2004-12-01

    Full Text Available In this paper the results of the usewear analysis of Mesolithic and Neolithic stone tools from three cave sites - Mala Triglavca and Trhlovca in the Slovenian Karst and Pupicina pec in Croatian Istra will be presented. Stone tools were examined under the light microscope at 50 - 200 x magnifications, and some additional physical and chemical analyses were undertaken. Various uses of the tools were determined and conclusions regarding the economies at those sites were drawn.

  1. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    International Nuclear Information System (INIS)

    Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-01-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  2. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    Science.gov (United States)

    Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

    2011-12-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  3. Utjecaj različitih količina sirutke u mliječnoj zamjenici na othranu jaradi

    OpenAIRE

    Posavac, Jasna

    1992-01-01

    Istraživanje se temelji na hipotezi da kravlje mlijeko u prahu u sastavu mliječne zamjenice može zamijeniti jeftinija sirutka u prahu bez posljedice na prirast i randman klanja jaradi. U namjeri da se izborom odgovarajuće tehnike i tehnologije ishrane jaradi u postnatalnom razvoju mortalitet svede na minimum, kozje mlijeko uštedi za proizvodnju sira, a mliječna zamjenica pripremi jeftinije s većim količinama nusproizvoda mljekarske industrije, sirutke u prahu. Rezultati planirane proizvodnje ...

  4. SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

    Directory of Open Access Journals (Sweden)

    N. K. Zhumashev

    2016-01-01

    Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

  5. High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

    Science.gov (United States)

    Chen, C.; Holmes, S. N.; Farrer, I.; Beere, H. E.; Ritchie, D. A.

    2018-03-01

    InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V‑1 s‑1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm‑1 that dominates the polar-optical mode scattering from  ∼70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures  <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.

  6. High-Efficiency Low-Cost Solar Receiver for Use Ina a Supercritical CO2 Recompression Cycle

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, Shaun D. [Brayton Energy, LLC, Portsmouth, NH (United States); Kesseli, James [Brayton Energy, LLC, Portsmouth, NH (United States); Nash, James [Brayton Energy, LLC, Portsmouth, NH (United States); Farias, Jason [Brayton Energy, LLC, Portsmouth, NH (United States); Kesseli, Devon [Brayton Energy, LLC, Portsmouth, NH (United States); Caruso, William [Brayton Energy, LLC, Portsmouth, NH (United States)

    2016-04-06

    This project has performed solar receiver designs for two supercritical carbon dioxide (sCO2) power cycles. The first half of the program focused on a nominally 2 MWe power cycle, with a receiver designed for test at the Sandia Solar Thermal Test Facility. This led to an economical cavity-type receiver. The second half of the program focused on a 10 MWe power cycle, incorporating a surround open receiver. Rigorous component life and performance testing was performed in support of both receiver designs. The receiver performance objectives are set to conform to the US DOE goals of 6¢/kWh by 2020 . Key findings for both cavity-type and direct open receiver are highlighted below: A tube-based absorber design is impractical at specified temperatures, pressures and heat fluxes for the application; a plate-fin architecture however has been shown to meet performance and life targets; the $148/kWth cost of the design is significantly less than the SunShot cost target with a margin of 30%; the proposed receiver design is scalable, and may be applied to both modular cavity-type installations as well as large utility-scale open receiver installations; the design may be integrated with thermal storage systems, allowing for continuous high-efficiency electrical production during off-sun hours; costs associated with a direct sCO2 receiver for a sCO2 Brayton power cycle are comparable to those of a typical molten salt receiver; lifetimes in excess of the 90,000 hour goal are achievable with an optimal cell geometry; the thermal performance of the Brayton receiver is significantly higher than the industry standard, and enables at least a 30% efficiency improvement over the performance of the baseline steam-Rankine boiler/cycle system; brayton’s patent-pending quartz tube window provides a greater than five-percent efficiency benefit to the receiver by reducing both convection and radiation losses.

  7. A randomized double-blind placebo-controlled crossover trial of sodium nitrate in patients with stable angina INAS.

    Science.gov (United States)

    Schwarz, Konstantin; Singh, Satnam; Parasuraman, Satish Kumar; Bruce, Maggie; Shepstone, Lee; Feelisch, Martin; Minnion, Magdalena; Ahmad, Shakil; Horowitz, John; Dawson, Dana K; Frenneaux, Michael P

    2016-11-01

    In an aging western population, a significant number of patients continue to suffer from angina once all revascularization and optimal medical treatment options are exhausted. Under experimental conditions, oral supplementation with inorganic nitrate was shown to exhibit a blood pressure-lowering effect, and has also been shown to promote angiogenesis, improve endothelial dysfunction and mitochondrial efficiency in skeletal muscle. It is unknown whether similar changes occur in cardiac muscle. In the current study, we investigate whether oral sodium nitrate treatment will improve myocardial ischemia in patients with stable angina.

  8. Unapređenje kvaliteta alata za livenje pod pritiskom primenom tehnologija inženjerstva površina

    OpenAIRE

    Terek, Pal

    2016-01-01

    Proučavane su koroziona postojanost i tendencija lepljenja različitihmaterijala u kontaktu sa tečnom Al–Si–Cu legurom. Ispitivanjem suobuhvaćeni čelik za rad na toplo, plazma nitrirani čelik i dupleksslojevi sa CrN, TiAlN, TiAlSiN i CrAlN prevlakama, različitog nivoapovršinske hrapavosti. Za ispitivanja pomenutih fenomenaprimenjena je metoda izvlačenja, koja je unapređena kako bi se povećalenjena tačnost i verodostojnost simulacije procesa livenja. Korozioniefekti su pojačani tako...

  9. Spin Qubits in GaAs Heterostructures and Gating of InAs Nanowires for Lowtemperature Measurements

    DEFF Research Database (Denmark)

    Nissen, Peter Dahl

    from screening effects. We find that simple, alternating spin filling is not followed. Furthermore, measurement of the exchange splitting, J, indicate two magnetic field dependent transitions lifting spin blockade which is likewise inconsistent with the simplest model for spin filling. The effect...... in lateral quantum dots. First, we incorporate ferromagnetic metal in the depletion gates making them double as micro-magnets supplying magnetic eld gradients allowing spin qubit operation. We demonstrate full tunability of the electron occupation with the magnetic gate structure, combined with a magnetic...... of the magnetic field gradients from the micro-magnet could play a role in the observed differences between the multi- and the few-electron double dots....

  10. Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Komninou, Ph.; Gladkov, Petar; Karakostas, Th.; Pangrác, Jiří; Pacherová, Oliva; Vaniš, Jan; Hulicius, Eduard

    -, č. 396 (2014), s. 54-60 ISSN 0022-0248 R&D Projects: GA MŠk 7AMB12GR034; GA ČR GA13-15286S Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Structuralproperties * MOVPE * PLcharacterization Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.698, year: 2014

  11. Submicron processing of InAs based quantum wells: A new, highly selective wet etchant for AlSb

    NARCIS (Netherlands)

    Morpurgo, A F; van Wees, B J; Klapwijk, T M; Borghs, G

    1997-01-01

    We describe a processing technology for patterning InAs/AlSb heterostructures far in the submicron regime. The processing is based on a new, highly selective wet etchant for AlSb. We discuss the electrical characterization of narrow ballistic channels (down to approximate to 140 nm width) realized

  12. Količina nitrita i nitrata u mesnim proizvodima s hrvatskog tržišta

    OpenAIRE

    Kovačević, Dr. sc. Dragan; Mastanjević, Dr. sc. Krešimir; Ćosić, Katarina; Pleadin, Dr. sc. Jelka

    2016-01-01

    Aditivi (konzervansi) nitriti i nitrati imaju široku primjenu u mesnoj industriji jer poboljšavaju kvalitetu, trajnost i sigurnost proizvoda, posebice zbog inhibicije rasta i razmnožavanja bakterija Staphylococcus aureus i Clostridium botulinum. Zbog štetnog djelovanja nitrita na zdravlje ljudi te dokazanog kancerogenog djelovanja nitrozamina, upotreba nitrita u mesnoj industriji nastoji se smanjiti. U ovom istraživanju su, pomoću enzimske spektrofotometrijske metode, tijekom razdoblja od 4 g...

  13. Jiřina Mlíkovská a její taneční nebe

    Czech Academy of Sciences Publication Activity Database

    Stavělová, Daniela

    2013-01-01

    Roč. 23, č. 2 (2013), s. 144-145 ISSN 0862-8351 Institutional support: RVO:68378076 Keywords : folk dance * folklorism * stage production * choreography Subject RIV: AC - Archeology, Anthropology, Ethnology

  14. Spin Qubits in GaAs Heterostructures and Gating of InAs Nanowires for Lowtemperature Measurements

    DEFF Research Database (Denmark)

    Nissen, Peter Dahl

    of the contenders in the race to build a large-scale quantum computer, is such a component, and research aiming to build, manipulate and couple spin qubits is looking at many materials systems to nd one where the requirements for fast control and long coherence time can be combined with ecient coupling between...... from screening effects. We find that simple, alternating spin filling is not followed. Furthermore, measurement of the exchange splitting, J, indicate two magnetic field dependent transitions lifting spin blockade which is likewise inconsistent with the simplest model for spin filling. The effect...

  15. Influence of Joule heating on magnetostriction and giant magnetoimpedance effect ina glass covered CoFeSiB microwire

    Czech Academy of Sciences Publication Activity Database

    Kraus, Luděk; Knobel, M.; Kane, S. N.; Chiriac, H.

    1999-01-01

    Roč. 85, č. 8 (1999), s. 5435-5437 ISSN 0021-8979. [Annual Conference on Magnetism and Magnetic Materials /4./. Miami, 09.11.1998-12.11.1998] Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.275, year: 1999

  16. NASA Tech Briefs, May 2005

    Science.gov (United States)

    2005-01-01

    Topics covered include: Fastener Starter; Multifunctional Deployment Hinges Rigidified by Ultraviolet; Temperature-Controlled Clamping and Releasing Mechanism; Long-Range Emergency Preemption of Traffic Lights; High-Efficiency Microwave Power Amplifier; Improvements of ModalMax High-Fidelity Piezoelectric Audio Device; Alumina or Semiconductor Ribbon Waveguides at 30 to 1,000 GHz; HEMT Frequency Doubler with Output at 300 GHz; Single-Chip FPGA Azimuth Pre-Filter for SAR; Autonomous Navigation by a Mobile Robot; Software Would Largely Automate Design of Kalman Filter; Predicting Flows of Rarefied Gases; Centralized Planning for Multiple Exploratory Robots; Electronic Router; Piezo-Operated Shutter Mechanism Moves 1.5 cm; Two SMA-Actuated Miniature Mechanisms; Vortobots; Ultrasonic/Sonic Jackhammer; Removing Pathogens Using Nano-Ceramic-Fiber Filters; Satellite-Derived Management Zones; Digital Equivalent Data System for XRF Labeling of Objects; Identifying Objects via Encased X-Ray-Fluorescent Materials - the Bar Code Inside; Vacuum Attachment for XRF Scanner; Simultaneous Conoscopic Holography and Raman Spectroscopy; Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP; Vibrating Optical Fibers to Make Laser Speckle Disappear; Adaptive Filtering Using Recurrent Neural Networks; and Applying Standard Interfaces to a Process-Control Language.

  17. Quantitative strain and compositional studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT device structure by TEM techniques.

    Science.gov (United States)

    Sridhara Rao, Duggi V; Sankarasubramanian, Ramachandran; Muraleedharan, Kuttanellore; Mehrtens, Thorsten; Rosenauer, Andreas; Banerjee, Dipankar

    2014-08-01

    In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the In x Ga1-x As channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the In x Ga1-x As layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the In x Ga1-x As channel layer was pseudomorphically grown leading to tetragonal strain along the [001] growth direction and that the average indium content (x) in the epilayer is ~0.12. We found consistency in the results obtained using various methods of analysis.

  18. A physics based compact model of I?V and C?V characteristics in AlGaN/GaN HEMT devices

    Science.gov (United States)

    Khandelwal, Sourabh; Fjeldly, T. A.

    2012-10-01

    In this paper we present a physics-based compact model for drain current Id and intrinsic gate-drain and gate-source capacitances CGS and CGD in AlGaN/GaN high electron mobility transistors. An analytical expression for the 2-DEG charge density ns, valid in all the regions of device operation is developed and applied to derive current and capacitances. The drain current model includes important physical effects like velocity saturation, channel length modulation, short channel effect, mobility degradation effect, and self-heating. The expression for ns is used to derive a model for CGS and CGD applicable in all the regions of device operation. The parameters introduced in the model have a clear link to the physical effects facilitating easy extraction of parameter values. The model is in excellent agreement with experimental data for both drain current and capacitances over a typical range of applied voltages and device geometries.

  19. MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

    Science.gov (United States)

    2017-10-16

    DARPA) or the U.S. Government. Report contains color . 14. ABSTRACT The objective of this project is to experimentally study the transient non...Conductivity as a Function of Phonon Mean Free Path............. 11 Figure 6: Schematic of TDTR Measurement...investigate the non-diffusive phonon transport.From density functional theory (DFT) based Boltzman transport equation (BTE), phonon mean free paths

  20. A Feasibility Study of UV Laser Assisted 3D-Atom Probe Analysis of AlGaN/GaN HEMTs

    Science.gov (United States)

    2013-03-05

    Field evaporation of Air Force Research Laboratory AlGaN/GaN high electron mobility transistors was attempted using a 3-D atom probe system with a...343nm UV wavelength laser. Previous attempts to analyze these samples using a Local Electrode Atom Probe system with a 532nm wavelength laser were...exhibit poor electrical and thermal properties like the wide bandgap AlGaN/GaN epilayers have been successfully. However, in this study every atom probe tip

  1. Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

    Science.gov (United States)

    Upadhyay, Bhanu B.; Takhar, Kuldeep; Jha, Jaya; Ganguly, Swaroop; Saha, Dipankar

    2018-03-01

    We demonstrate that N2 and O2 plasma treatment followed by rapid thermal annealing leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor. Both the source/drain access and gate regions respond positively improving the transistor characteristics albeit to different extents. Characterizations indicate that the surface show the characteristics of that of a higher band-gap material like AlxOy and GaxOy along with N-vacancy in the sub-surface region. The N-vacancy leads to an increased two-dimensional electron gas density. The formation of oxides lead to a reduced gate leakage current and surface passivation. The DC characteristics show increased transconductance, saturation drain current, ON/OFF current ratio, sub-threshold swing and lower ON resistance by a factor of 2.9, 2.0, 103.3 , 2.3, and 2.1, respectively. The RF characteristics show an increase in unity current gain frequency by a factor of 1.7 for a 500 nm channel length device.

  2. Influence of a BGaN back-barrier on DC and dynamic performances of an AlGaN/GaN HEMT: simulation study

    Science.gov (United States)

    Guenineche, Lotfi; Hamdoune, Abdelkader

    2016-05-01

    In this paper, we study the effect of a BGaN back-barrier on the DC and RF performances of an AlGaN/GaN high electron mobility transistor. Using TCAD Silvaco, we examine some variations of thickness and boron concentration in the BGaN back-barrier layer. First, we fix the thickness of the back-barrier layer at 5 nm and we vary the concentration of the boron in BGaN from 1% to 4%. Second, we fix the concentration of the boron in BGaN to only 2% and we vary the thickness of the back-barrier layer from 20 nm to 110 nm. The BGaN back-barrier layer creates an electrostatic barrier under the channel layer and improves the performances of the device by improving the electron confinement in the two-dimensional electron gas. The DC and AC characteristics are improved, respectively, by a greater concentration of boron and by a thicker BGaN layer. For 4% boron concentration and 5 nm thick back-barrier layer, we obtain a maximum drain current of 1.1 A, a maximum transconductance of 480 mS mm-1, a cut-off frequency of 119 GHz, and a maximum oscillation frequency of 311 GHz.

  3. Catalyseur d'hydrocraquage à base de sulfure de NiMo déposé sur une zéolithe HEMT modifiée

    Science.gov (United States)

    Baalala, M.; Becue, T.; Leglise, J.; Manoli, J. M.; van Gestel, J. N. M.; Lamotte, J.; Bensitel, M.; Goupil, J. M.; Cornet, D.

    1999-02-01

    Treating a NH4EMT zeolite with a solution of (NH4)2SiF6 at 80 °C affords a solid containing amorphous SiO2 intimately mixed with the zeolite. This acidic support EMT-Si was loaded with NiMo sulfide in order to prepare a bifunctional catalyst, which was tested for the hydrogenation of benzene and the hydrocracking of n-heptane. This NiMo/EMT-Si catalyst was found more active for hydrogenation than the analogous NiMo/HY. This is ascribed to a higher dispersion of the NiMo sulfide, which is almost equally shared between the internal mesopores in the modified EMT solid, and the fissures, which were created throughout the zeolite grains upon inserting the NiMo sulfide. The catalyst with the EMT-Si support was also found more active than the NiMo/HY for the hydrocracking of heptane, with a slightly higher selectivity into heptane isomers. Le traitement d'une zéolithe NH4EMT par une solution de (NH4)2SiF6 fournit un solide comportant une phase SiO2 amorphe intimement mélangée aux parties intactes de la zéolithe. Sur ce support acide EMT-Si, on a greffé un sulfure de NiMo afin de préparer un catalyseur bifonctionnel qui a été testé dans les réactions d'hydrogénation du benzène et d'hydrocraquage du n-heptane. Ce catalyseur NiMo/EMT-Si s'avère plus actif en hydrogénation que son analogue NiMo/HY, en raison d'une meilleure dispersion du sulfure de NiMo. Sur le solide EMT modifié, le sulfure se répartit à peu près également entre les mésopores internes et les fissures crées dans les grains de zéolithe lors de l'insertion du sulfure de NiMo. Au contraire sur le support Y, une partie du sulfure est externe aux grains de zéolithe et inactive en catalyse. Le catalyseur NiMo/EMT-Si est aussi trouvé plus actif que le NiMo/HY en hydrocraquage du n-heptane, et un peu plus sélectif en isomères.

  4. Radiation Hard Multichannel AlN/GaN HEMT for High Efficiency X- and Ka-Band Power Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This project is directed to the development of low-loss, high power-density Aluminum Nitride (AlN)/Gallium Nitride (GaN) heterostructure based transistors for...

  5. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Science.gov (United States)

    Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Agrawal, M.; Yiding, Lin; Arulkumaran, S.; Vicknesh, S.; Ng, G. I.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with "Al" mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (˜1013 cm-2) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm2/V.s and a sheet carrier concentration (ns) of 0.97 × 1013 cm-2 for the DH-HEMT structure, while they are 1310 cm2/V.s and 1.09 × 1013 cm-2, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (fT) and maximum oscillation frequency (fmax) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  6. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

  7. Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

    International Nuclear Information System (INIS)

    Liu Sheng-Hou; Cai Yong; Zeng Chun-Hong; Shi Wen-Hua; Zhang Bao-Shun; Gong Ru-Min; Wang Jin-Yan; Wen, Cheng P.; Feng Zhi-Hong; Wang Jing-Jing; Yin Jia-Yun; Qin Hua

    2011-01-01

    A nano-channel array (NCA) structure is applied to realize enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs). The fabricated NCA-HEMT, consisting of 1000 channels connected in parallel with a channel width of 64 nm, shows a threshold voltage of 0.15 V and a subthreshold slope of 78 mV/dec, compared to −3.92 V and 99 mV/dec for a conventional HEMT (C-HEMT), respectively Both the NCA-HEMT and C-HEMT show similar gate leakage current, indicating no significant degradation in gate leakage characteristics for the NCA-HEMT. The surrounding-field effect and relieved polarization contribute to the very large positive threshold voltage shift, while the work function difference makes it positive. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Dielectric GaAs Antenna Ensuring an Efficient Broadband Coupling between an InAs Quantum Dot and a Gaussian Optical Beam

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Malik, Nitin S.; Dupuy, Emmanuel

    2013-01-01

    We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the ex...

  9. Direct measurement of the field from a magnetic recording head using an InAs Hall sensor on a contact write/read tester

    International Nuclear Information System (INIS)

    Gokemeijer, N.J.; Clinton, T.W.; Crawford, T.M.; Johnson, Mark

    2005-01-01

    At 1 Tbit/in 2 areal density magnetic recording dimensions, reliable magnetic field metrology does not exist. One technique to map the spatial profile of the magnetic field of a write head is to use a contact read/write tester. A magnetic recording head is brought into contact with a Hall sensor, and is subsequently scanned with nm resolution. For a 300 nm track width longitudinal recording head, the magnetic field of the head was mapped. Measurements include the down track field gradient and cross-track field profile and the current-field transfer curve. These results suggest this technique offers a viable write field metrology

  10. Effect of Sb and As spray on emission characteristics of InAs quantum dots with AlAs capping layer

    Science.gov (United States)

    Zhang, Z.; Tan, S.; Kim, Y.; Liu, Z.; Reece, P. J.; Bremner, S. P.

    2017-10-01

    We report on the influence of an Sb/As combined spray on the physical and optical characteristics of AlAs-capped InAs/GaAs quantum dots grown by Molecular Beam Epitaxy. Photoluminescence emission from the quantum dots shows a significant peak position shift under different Sb/As spray sequences. A blue-shifted quantum dot emission peak with an initial Sb rest indicates a large-to-small quantum dots transition process, with a bi-modal quantum dot size distribution inferred. High-resolution Transmission Electron Microscopy results reveal a large density of small quantum dots when the Sb spray is treated first. Furthermore, defect passivation in the vicinity of the quantum dots by use of Sb spray was detected.

  11. AN OBSERVATION TO THE VOCABULARY OF UZBEK / ÖZBEK TÜRKÇESİ SÖZ VARLIĞINA BİR BAKIS

    Directory of Open Access Journals (Sweden)

    Dr. Feridun TEKİN

    2008-12-01

    Full Text Available From second half of 19.th Century -to beginning of20.th Century is an important time scale that Uzbekvocabulary developed importantly. Up to this periodUzbek vocabulary has generally import words from Arabicand Persian languages. Since Kingdom of Russiaoccupied Turkestan after the second part of 19.thcentury, Russian and indirectly western words vocabulary which has carried by Russian Culture cameinto Uzbek. Also those vocabularies has carried out somemorphological and fonetical characteristics withthemselves.In this study Russian words and western orientedwords both came through with Russian language intothe vocabulary of Uzbek. This subject will be evaluatedfrom various perspectives.

  12. Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Oswald, Jiří; Komarnitskyy, V.; Kuldová, Karla; Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří

    2009-01-01

    Roč. 46, 1-2 (2009), 324-327 ISSN 0749-6036 R&D Projects: GA ČR GA202/06/0718; GA AV ČR IAA100100719 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * metal-organic vapor phase epitaxy * indium arsenide * gallium arsenide * photoluminescence * AFM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.910, year: 2009

  13. High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2013-01-01

    The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.

  14. President Ilvese pojale Eesti sõjaväes mööndusi ei tehta / Luukas Kristjan Ilves ; intervjueerinud Marina Loštšina

    Index Scriptorium Estoniae

    Ilves, Luukas Kristjan, 1987-

    2009-01-01

    Intervjuu president Toomas Hendrik Ilvese pojaga, kes andis 11. septembril 2009 Tapa väeosas sõdurivande. Luukas Kristjan Ilves räägib Eesti sõjaväkke astumise põhjustest, elust kaitseväes, eesti keele oskusest, kodutundest ja tulevikuplaanidest

  15. Electronic properties of excited states in single InAs quantum dots; Elektronische Struktur angeregter Zustaende einzelner InAs-Quantenpunkte

    Energy Technology Data Exchange (ETDEWEB)

    Warming, Till

    2009-02-20

    The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy ({mu}PLE). One of the main difficulties using {mu}PLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence ({mu}PL) and {mu}PLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton binding energy of excited exciton states is accessible. From the shift of the exciton binding energy, when the hole is not in the ground state, but in the first or second excited states, conclusions on the shape of the wavefunctions can be drawn. Energy selective storage of charge carriers enables the access to few-particle binding energies of excited states also in quantum dot ensemble. The storage of charge carriers is refined to storage of defined spin states in the quantum dots. A technique for the deterministic preparation and readout is presented, what is of utmost importance for the realization of qubits for quantum computation. (orig.)

  16. Simultaneous determination of RA-226, natural uranium and natural thorioum by gamma-ray spectrometry INa(Tl) in solid samples

    International Nuclear Information System (INIS)

    Salvador, S.; Navarro, T.; Alvarez, A.

    1990-01-01

    A method has been described to determine activities of Ra-226, natural uranium, and natural thorium, by gamma-ray spectrometry. The system was calibrated for efficiency by using synthetic calibrated standards. It is necessary, in the samples, to assume secular equilibrium between Ra-226 and Th-232 and its daughters nuclides, and U-238 and its immediate daughter Th-234, because the photopeaks measured are from these dsaugthers. Our results indicate that a non destructive gamma spectrometric method can ofter replace the radiochemical techniques used in measuring radiactivities in this type of samples. (Author). 9 refs

  17. Simultaneous determination of Ra-226, natural uranium and natural thorium by gamma-ray spectrometry INa(Ti), in solid samples

    International Nuclear Information System (INIS)

    Salvador, S.; Navarro, T.; Alvarez, A.

    1991-01-01

    A method has been developed to determine activities of Ra-226, natural uranium and natural thorium by gamma-ray spectrometry. The measurement system has been calibrated using standards specially prepared at the laboratory. It is necessary to assume secular equilibrium in the samples, between Ra-226 and Th-232 and its daughters nuclides, and between U-238 and its immediate daughter Th-234, as the photo peaks measured are those of the daughters. The results obtained indicate that this method can of ter replace the radiochemical techniques used to measure activities in this type of sample. The method has been successfully used to determine these natural isotopes in samples from uranium mills. (Author) 9 refs

  18. Forenzične in policijske krajšave ter ostali relevantni besedotvorni procesi v TV seriji Na kraju zločina: New York

    OpenAIRE

    Deučman, Adina

    2013-01-01

    The diploma paper Forensic and Police Abbreviations and Other Relevant Word Formation Processes in the TV Series CSI: NY deals with numerous police, forensic, medical abbreviations and relevant word formation processes which are directly associated with crime scene investigation disciplines. The aim si to list and analyse the use of forensic/police abbreviations and most often used word formation processes in the series' seventh season and compare them to the real forensic and police abbrevia...

  19. 'Over the ruined factory there’s a funny noise': Throbbing Gristle and the mediatized roots of noise in/as music

    NARCIS (Netherlands)

    Kromhout, M.J.

    2011-01-01

    Britain's Throbbing Gristle used a kind of aural and conceptual violence to pursue specific ideological goals. The concept of noise is crucial to the understanding of this use, but is often explained in a limiting discourse. Friedrich Kittler offers an alternative approach by showing how the

  20. Elektřina z panelů nebo teplá voda ze střešních kolektorů

    Czech Academy of Sciences Publication Activity Database

    Jiříček, I.; Kolovratník, M.; Macák, J.; Pohořelý, Michael; Diblíková, L.; Janda, V.

    2009-01-01

    Roč. 103, č. 7 (2009), s. 601-604 ISSN 0009-2770 Institutional research plan: CEZ:AV0Z40720504 Keywords : photovoltaic panels * solar collectors Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 0.717, year: 2009