WorldWideScience

Sample records for ina n-donor atoms

  1. Surface Preparation of InAs (110 Using Atomic Hydrogen

    Directory of Open Access Journals (Sweden)

    T.D. Veal

    2002-06-01

    Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

  2. Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110)

    International Nuclear Information System (INIS)

    Tejedor, Paloma; Diez-Merino, Laura; Beinik, Igor; Teichert, Christian

    2009-01-01

    Conductive atomic force microscopy has been used to investigate the effect of atomic hydrogen and step orientation on the growth behavior of InAs on GaAs (110) misoriented substrates. Samples grown by conventional molecular beam epitaxy exhibit higher conductivity on [110]-multiatomic step edges, where preferential nucleation of InAs nanowires takes place by step decoration. On H-terminated substrates with triangular terraces bounded by [115]-type steps, three-dimensional InAs clusters grow selectively at the terrace apices as a result of a kinetically driven enhancement in upward mass transport via AsH x intermediate species and a reduction in the surface free energy.

  3. Direct Identification of Atomic-Like Electronic Levels in InAs Nano crystal Quantum Dots

    International Nuclear Information System (INIS)

    Millo, O.; Katz, D.

    1999-01-01

    The size dependent level structure of InAs nano crystals in the range 2-7 nm in diameter is investigated using both tunneling and optical spectroscopies. The tunneling measurements are performed using a cryogenic scanning tunneling microscope on individual nano crystals that, are attached to a gold substrate via dithiol molecules. The tunneling I-V characteristics manifest an interplay between single electron charging and quantum size effects. We are able to directly identify quantum confined states of isolated InAs nano crystals having s and p symmetries. These states are observed in the I-V curves as two and six-fold single electron charging multiplets. Excellent agreement is found between the strongly allowed optical transitions [1] and the spacing of levels detected in the tunneling experiment. This correlation provides new information on the quantum-dot level structure, from which we conclude that the top-most valence band state has both s and p characteristics. The interplay between level structure singles electron charging of the nano crystals obeys an atomic-like Aufbau sequential electron level occupation

  4. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    International Nuclear Information System (INIS)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  5. Studying the InAs quantum points on the vicinal surface of a GaAs crystal by the atomic force microscopy

    CERN Document Server

    Evtikhiev, V P; Kotelnikov, E Y; Matveentsev, A V; Titkov, A N; Shkolnik, A S

    2002-01-01

    The methodology for processing the images, obtained through the atomic force microscopy, is proposed. It is shown by the concrete example, how the parameters of the InAs clusters on the vicinal surface of the GaAs crystal are determined. This makes it possible to calculate the energy levels of the electrons and holes in the quantum point with application of the previously developed cluster spherical model

  6. Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

    NARCIS (Netherlands)

    Bruls, D.M.; Vugs, J.W.A.M.; Koenraad, P.M.; Skolnick, M.S.; Hopkinson, M.; Wolter, J.H.; Miura, N.; Ando, T.

    2001-01-01

    We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained

  7. Atomic scale characterization of ion-induced amorphization of GaAs and InAs using PAC spectroscopy

    International Nuclear Information System (INIS)

    Dogra, R.; Byrne, A.P.; Ridgway, M.C.

    2005-01-01

    Single crystals of GaAs (100) and InAs (100) were implanted with 1-7 MeV 74 Ge ions over a wide dose range at liquid nitrogen temperature. The implanted substrates were investigated with respect to the damage production by means of perturbed angular correlation spectroscopy based upon hyperfine interactions of nuclear electromagnetic moments of probe nuclei with extra-nuclear fields. The perturbed angular correlation measurements were performed at room temperature utilizing the 111 In/Cd radioisotope probe nuclei. The crystalline, disordered and amorphous probe environments were identified from the measurements. The defect production is described within the framework of different amorphization models. (author). 6 refs., 2 figs

  8. Native oxide transport and removal during the atomic layer deposition of Ta{sub 2}O{sub 5} on InAs(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Henegar, Alex J.; Gougousi, Theodosia, E-mail: gougousi@umbc.edu [Department of Physics, UMBC, Baltimore, Maryland 21250 (United States)

    2016-05-15

    Atomic layer deposition (ALD) was used to deposit Ta{sub 2}O{sub 5} on etched and native oxide-covered InAs(100) using pentakis dimethyl amino tantalum and H{sub 2}O at 200–300 °C. The transport and removal of the native oxides during the ALD process was investigated using x-ray photoelectron spectroscopy (XPS). Depositions above 200 °C on etched surfaces protected the interface from reoxidation. On native oxide-covered surfaces, depositions resulted in enhanced native oxide removal at higher temperatures. The arsenic oxides were completely removed above 250 °C after 3 nm of film growth, but some of the As{sub 2}O{sub 3} remained in the film at lower temperatures. Angle-resolved and sputter depth profiling XPS confirmed indium and arsenic oxide migration into the Ta{sub 2}O{sub 5} film at deposition temperatures as low as 200 °C. Continuous removal of both arsenic and indium oxides was confirmed even after the deposition of several monolayers of a coalesced Ta{sub 2}O{sub 5} film, and it was demonstrated that native oxide transport is a prevalent component of the interface “clean-up” mechanism.

  9. Lanthanide and actinide complexation studies with tetradentate 'N' donor ligands

    International Nuclear Information System (INIS)

    Bhattacharyya, A.; Mohapatra, M.; Mohapatra, P.K.; Rawat, N.; Tomar, B.S.; Gadly, T.; Ghosh, S.K.; Manna, D.; Ghanty, T.K.

    2014-01-01

    Because of their similar charge and chemical behaviour separation of trivalent actinides and lanthanides is an important and challenging task in nuclear fuel cycle. Soft (S,N) donor ligands show selectivity towards the trivalent actinides over the lanthanides. Out of various 'N' donor ligands studied, bis(1,2,4)triazinyl bipyridine (BTBP) and bis(1,2,4)triazinyl phenanthroline (BTPhen) were found to be most promising. In order to understand the separation behaviour of these ligands, their complexation studies with these 'f' block elements are essential. In the present work, complexation studies of various lanthanide ions (La 3+ , Eu 3+ and Er 3+ ) was studied with ethyl derivatives of BTBP (C 2 BTBP) and BTBPhen (C 2 BTPhen) and pentyl derivative of BTBP (C 5 BTBP) in acetonitrile medium using UV-Vis spectrophotometry, fluorescence spectroscopy and solution calorimetry. Computational studies were also carried out to understand the experimental results

  10. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  11. Growth and characterization of InAs quantum dots on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, L.; Ankudinov, A.; Bensing, F.; Wagner, J.; Wagner, V.; Geurts, J. [Wuerzburg Univ. (Germany). Lehrstuhl fuer Experimentelle Physik 3; Ade, G.; Hinze, P. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Waag, A. [Ulm Univ. (Germany). Abt. Halbleiterphysik

    2001-03-08

    We present a comprehensive investigation of molecular beam epitaxial (MBE) grown InAs quantum dots (QD) on silicon (001) and (111) by reflection high energy electron diffraction (RHEED) and Raman spectroscopy in UHV environment and ex-situ by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Two different ways were developed to prepare up to 10{sup 11} cm{sup -2} InAs QDs on Si(001). One is the conventional mode by exceeding a critical thickness of deposition at which 2D growth changes towards a 3D growth mode. A second way is a dewetting transition, induced by cooling an approximately 1 ML thin 2D InAs layer from growth temperature below a critical temperature at which RHEED indicates the formation of nanoislands. Samples grown in both manners show significant differences in morphology and shape though RHEED, TEM and Raman studies correspondingly indicate strain relaxation. On Si(111) InAs grows in the common temperature range for InAs growth ({proportional_to}400 C) in flat clusters separated by deep trenches. A previous passivation of the Si(111) surface with arsenic at {proportional_to}700 C on the other hand leads to the formation of large InAs nanocrystals. (orig.)

  12. Application of X-ray single crystal diffractometry to investigation of Np(5) complexes with n-donor ligands

    International Nuclear Information System (INIS)

    Andreev, G.

    2007-01-01

    Full text of publication follows. We present here some results of application of conventional X-ray single crystal diffractometry to the research on the interaction of Np(V) with N-donor ligands. Compounds that can coordinate to actinides through one or several nitrogen atoms are of a great variety and occur widely in the biosphere. For example, imidazole, pyridine and their derivatives are the building blocks of many biologically important molecules; triazines are known to occur in some aquatic plants. The presence of anthropogenic organic agents like amine-N-carboxylic acids in surface waters has the potential to re-mobilize metals from sediments and aquifers and to influence their bioavailability. The interaction of radionuclides with such ligands needs to be studied in detail to give fundamental understanding the conditions of the incorporation of long lived a-emitters (Np and Pu primarily) into the food chain. Another aspect of the same problem is the design of new chelating ligands for selective co-ordination of actinide ions as an alternative to the traditional sequestering agents. The problem of the separation of long-lived minor actinides and their transmutation also calls for design of new highly selective ligands for solvent extraction. Polydentate N-donor ligands are now considered to be very promising. A detailed study of structural chemistry is crucial for understanding the relationship between the architecture of the ligands and their binding affinity for actinides. The X-ray single crystal diffractometry became conventional technique as applied to the investigation of actinides in spite of difficulties regarding safe handling of radionuclides. This technique provides unambiguous information about modes of the ligand co-ordination to the metal ion and geometrical parameters of complexes. Moreover, the employment of a synchrotron radiation shows considerable promise for determination of solid state structures as well as obtaining structural

  13. InaSAFE applications in disaster preparedness

    Science.gov (United States)

    Pranantyo, Ignatius Ryan; Fadmastuti, Mahardika; Chandra, Fredy

    2015-04-01

    Disaster preparedness activities aim to reduce the impact of disasters by being better prepared to respond when a disaster occurs. In order to better anticipate requirements during a disaster, contingency planning activities can be undertaken prior to a disaster based on a realistic disaster scenario. InaSAFE is a tool that can inform this process. InaSAFE is a free and open source software that estimates the impact to people and infrastructure from potential hazard scenarios. By using InaSAFE, disaster managers can develop scenarios of disaster impacts (people and infrastructures affected) to inform their contingency plan and emergency response operation plan. While InaSAFE provides the software framework exposure data and hazard data are needed as inputs to run this software. Then InaSAFE can be used to forecast the impact of the hazard scenario to the exposure data. InaSAFE outputs include estimates of the number of people, buildings and roads are affected, list of minimum needs (rice and clean water), and response checklist. InaSAFE is developed by Indonesia's National Disaster Management Agency (BNPB) and the Australian Government, through the Australia-Indonesia Facility for Disaster Reduction (AIFDR), in partnership with the World Bank - Global Facility for Disaster Reduction and Recovery (GFDRR). This software has been used in many parts of Indonesia, including Padang, Maumere, Jakarta, and Slamet Mountain for emergency response and contingency planning.

  14. Elastic properties and electron transport in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  15. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  16. Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

    Science.gov (United States)

    Song, Young Jae; Erwin, Steven C; Rutter, Gregory M; First, Phillip N; Zhitenev, Nikolai B; Stroscio, Joseph A

    2009-12-01

    We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

  17. Women Fellows of INAE | Women in Science | Initiatives | Indian ...

    Indian Academy of Sciences (India)

    Women Fellows of INAE. INAE - Indian National Academy of Engineering. Ms. Alpa Sheth Civil Engineering. Prof. Bharathi Bhat Electronics & Communication Engineering. Prof. Dipanwita Roy Chowdhury Computer Engineering and Information Technology. Prof. Kamala Krithivasan Computer Engineering and Information ...

  18. Atoms

    International Nuclear Information System (INIS)

    Fuchs, Alain; Villani, Cedric; Guthleben, Denis; Leduc, Michele; Brenner, Anastasios; Pouthas, Joel; Perrin, Jean

    2014-01-01

    Completed by recent contributions on various topics (atoms and the Brownian motion, the career of Jean Perrin, the evolution of atomic physics since Jean Perrin, relationship between scientific atomism and philosophical atomism), this book is a reprint of a book published at the beginning of the twentieth century in which the author addressed the relationship between atomic theory and chemistry (molecules, atoms, the Avogadro hypothesis, molecule structures, solutes, upper limits of molecular quantities), molecular agitation (molecule velocity, molecule rotation or vibration, molecular free range), the Brownian motion and emulsions (history and general features, statistical equilibrium of emulsions), the laws of the Brownian motion (Einstein's theory, experimental control), fluctuations (the theory of Smoluchowski), light and quanta (black body, extension of quantum theory), the electricity atom, the atom genesis and destruction (transmutations, atom counting)

  19. Spectroscopic investigation of complexation of Cm(III) und Eu(III) with partitioning-relevant N-donor ligands

    International Nuclear Information System (INIS)

    Bremer, Antje

    2014-01-01

    The separation of trivalent actinides and lanthanides is an essential part of the development of improved nuclear fuel cycles. Liquid-liquid extraction is an applicable technique to achieve this separation. Due to the chemical similarity and the almost identical ionic radii of trivalent actinides and lanthanides this separation is, however, only feasible with highly selective extracting agents. It has been proven that molecules with soft sulphur or nitrogen donor atoms have a higher affinity for trivalent actinides. In the present work, the complexation of Cm(III) and Eu(III) with N-donor ligands relevant for partitioning has been studied by time-resolved laser fluorescence spectroscopy (TRLFS). This work aims at a better understanding of the molecular reason of the selectivity of these ligands. In this context, enormous effort has been and is still put into detailed investigations on BTP and BTBP ligands, which are the most successful N-donor ligands for the selective extraction of trivalent actinides, to date. Additionally, the complexation and extraction behavior of molecules which are structurally related to these ligands is studied. The ligand C5-BPP (2,6-bis(5-(2,2-dimethylpropyl)-1H-pyrazol-3-yl)pyridine) where the triazine rings of the aromatic backbone of the BTP ligands have been replaced by pyrazole rings is one of these molecules. Laser fluorescence spectroscopic investigation of the complexation of Cm(III) with this ligand revealed stepwise formation of three (Cm(C5-BPP) n ) 3+ complexes (n = 1 - 3). The stability constant of the 1:3 complex was determined (log β 3 = 14.8 ± 0.4). Extraction experiments have shown that, in contrast to BTP and BTBP ligands, C5-BPP needs an additional lipophilic anion source such as a 2-bromocarboxylic acid to selectively extract trivalent actinides from nitric acid solutions. The comparison of the stability constant of the (Cm(C5-BPP) 3 ) 3+ complex with the stability constant of the (Cm(nPr-BTP) 3 ) 3+ complex

  20. Studies on the controlled growth of InAs nanostructures on scission surfaces

    International Nuclear Information System (INIS)

    Bauer, J.

    2006-01-01

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {110}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {110}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  1. Identification of Ina proteins from Fusarium acuminatum

    Science.gov (United States)

    Scheel, Jan Frederik; Kunert, Anna Theresa; Pöschl, Ulrich; Fröhlich-Nowoisky, Janine

    2015-04-01

    Freezing of water above -36° C is based on ice nucleation activity (INA) mediated by ice nucleators (IN) which can be of various origins. Beside mineral IN, biological particles are a potentially important source of atmospheric IN. The best-known biological IN are common plant-associated bacteria. The IN activity of these bacteria is induced by a surface protein on the outer cell membrane, which is fully characterized. In contrast, much less is known about the nature of fungal IN. The fungal genus Fusarium is widely spread throughout the earth. It belongs to the Ascomycota and is one of the most severe fungal pathogens. It can affect a variety of organisms from plants to animals including humans. INA of Fusarium was already described about 30 years ago and INA of Fusarium as well as other fungal genera is assumed to be mediated by proteins or at least to contain a proteinaceous compound. Although many efforts were made the precise INA machinery of Fusarium and other fungal species including the proteins and their corresponding genes remain unidentified. In this study preparations from living fungal samples of F. acuminatum were fractionated by liquid chromatography and IN active fractions were identified by freezing assays. SDS-page and de novo sequencing by mass spectrometry were used to identify the primary structure of the protein. Preliminary results show that the INA protein of F. acuminatum is contained in the early size exclusion chromatography fractions indicating a high molecular size. Moreover we could identify a single protein band from IN active fractions at 130-145 kDa corresponding to sizes of IN proteins from bacterial species. To our knowledge this is for the first time an isolation of a single protein from in vivo samples, which can be assigned as IN active from Fusarium.

  2. InAs nanowire formation on InP(001)

    International Nuclear Information System (INIS)

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-01-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

  3. Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

    NARCIS (Netherlands)

    Zhan, H.H.; Nötzel, R.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2003-01-01

    Self-assembled InAs quantum dots are grown at low temperature (LT) by molecular beam epitaxy (MBE) on GaAs substrates. The growth is in situ monitored by reflection high-energy electron diffraction, and ex situ evaluated by atomic force microscopy for the morphological properties, and by

  4. Atom

    International Nuclear Information System (INIS)

    Auffray, J.P.

    1997-01-01

    The atom through centuries, has been imagined, described, explored, then accelerated, combined...But what happens truly inside the atom? And what are mechanisms who allow its stability? Physicist and historian of sciences, Jean-Paul Auffray explains that these questions are to the heart of the modern physics and it brings them a new lighting. (N.C.)

  5. Optical emission of InAs nanowires

    International Nuclear Information System (INIS)

    Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

    2012-01-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

  6. Optical emission of InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

    2012-09-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

  7. Probing the influence of N-donor capping ligands on supramolecular assembly in molecular uranyl materials

    Energy Technology Data Exchange (ETDEWEB)

    Carter, Korey P.; Kalaj, Mark; Cahill, Christopher L. [Department of Chemistry, The George Washington University, Washington, DC (United States)

    2016-01-15

    The syntheses and crystal structures of six new compounds containing the UO{sub 2}{sup 2+} cation, 3,5-dichlorobenzoic acid, and a chelating N-donor [2,2'-bipyridine (bipy), 1,10-phenanthroline (phen), 4,7-dimethyl-1,10-phenanthroline (dimethylphen), 2,2{sup '}:6{sup '},2''-terpyridine (terpy), 4{sup '}-chloro-2,2{sup '}:6{sup '},2''-terpyridine (Cl-terpy), or 2,4,6-tris(2-pyridyl)-s-triazine (TPTZ)] are reported. Single-crystal X-ray diffraction analysis of these materials enabled the exploration of the structural relationship between the benzoic acids and the chelating N-donor as well as providing a platform to evaluate the effects of ligand choice on uranyl hydrolysis and subsequent oligomerization. At an unadjusted pH (ca. 3), a mix of uranyl monomers and dimers are observed, dimer formation resulting from both bridging carboxylate linkers and hydroxo bridges. Assembly by halogen- and hydrogen-bonding interactions as well as π-π interactions was observed depending on the experimental conditions utilized. Further, spectroscopic characterization (both vibrational and luminescence) of complexes 1, 4, and 5 to explore the effects of the electron-donating ability of the capping ligand on the corresponding uranyl luminescence and vibrational spectra suggests that there is a relationship between the observed bathochromic shifts and the electron-donating ability of the capping ligands. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Probing the influence of N-donor capping ligands on supramolecular assembly in molecular uranyl materials

    International Nuclear Information System (INIS)

    Carter, Korey P.; Kalaj, Mark; Cahill, Christopher L.

    2016-01-01

    The syntheses and crystal structures of six new compounds containing the UO 2 2+ cation, 3,5-dichlorobenzoic acid, and a chelating N-donor [2,2'-bipyridine (bipy), 1,10-phenanthroline (phen), 4,7-dimethyl-1,10-phenanthroline (dimethylphen), 2,2 ' :6 ' ,2''-terpyridine (terpy), 4 ' -chloro-2,2 ' :6 ' ,2''-terpyridine (Cl-terpy), or 2,4,6-tris(2-pyridyl)-s-triazine (TPTZ)] are reported. Single-crystal X-ray diffraction analysis of these materials enabled the exploration of the structural relationship between the benzoic acids and the chelating N-donor as well as providing a platform to evaluate the effects of ligand choice on uranyl hydrolysis and subsequent oligomerization. At an unadjusted pH (ca. 3), a mix of uranyl monomers and dimers are observed, dimer formation resulting from both bridging carboxylate linkers and hydroxo bridges. Assembly by halogen- and hydrogen-bonding interactions as well as π-π interactions was observed depending on the experimental conditions utilized. Further, spectroscopic characterization (both vibrational and luminescence) of complexes 1, 4, and 5 to explore the effects of the electron-donating ability of the capping ligand on the corresponding uranyl luminescence and vibrational spectra suggests that there is a relationship between the observed bathochromic shifts and the electron-donating ability of the capping ligands. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

    Science.gov (United States)

    Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

    2014-04-01

    Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

  10. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    DEFF Research Database (Denmark)

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

    2011-01-01

    The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende......, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers...

  11. In situ surface and interface study of crystalline (3×1)-O on InAs

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Xiaoye, E-mail: xxq102020@utdallas.edu; Wallace, Robert M., E-mail: rmwallace@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wang, Wei-E.; Rodder, Mark S. [Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, Texas 78754 (United States)

    2016-07-25

    The oxidation behavior of de-capped InAs (100) exposed to O{sub 2} gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In{sub 2}O and As{sub 2}O{sub 3}. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO{sub 2} is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO{sub 2} growth at 100 °C.

  12. CO2 activation through silylimido and silylamido zirconium hydrides supported on N-donor chelating SBA15 surface ligand

    KAUST Repository

    Pasha, Fahran Ahmad; Bendjeriou-Sedjerari, Anissa; Abou-Hamad, Edy; Huang, Kuo-Wei; Basset, Jean-Marie

    2016-01-01

    Density functional theory calculations and 2D 1H-13C HETCOR solid state NMR spectroscopy prove that CO2 can probe, by its own reactivity, different types of N-donor surface ligands on SBA15-supported ZrIV hydrides: [(≡Si-O-)(≡Si-N=)[Zr]H] and [(≡Si

  13. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

    Science.gov (United States)

    Dionízio Moreira, M; Venezuela, P; Miwa, R H

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  14. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    International Nuclear Information System (INIS)

    Dionizio Moreira, M; Venezuela, P; Miwa, R H

    2010-01-01

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  15. Role of N-Donor Sterics on the Coordination Environment and Dimensionality of Uranyl Thiophenedicarboxylate Coordination Polymers

    Energy Technology Data Exchange (ETDEWEB)

    Thangavelu, Sonia G. [Department; Butcher, Ray J. [Department; Cahill, Christopher L. [Department

    2015-06-09

    Thiophene 2,5-dicarboxylic acid (TDC) was reacted with uranyl acetate dihydrate and one (or none) of six N-donor chelating ligands (2,2'-bipyridine (BPY), 4,4'-dimethyl-2,2'-bipyridine (4-MeBPY), 5,5'-dimethyl-2,2'-bipyridine (5-MeBPY), 6,6'-dimethyl-2,2'-bipyridine (6-MeBPY), 4,4',6,6'-tetramethyl-2,2'-bipyridine (4,6-MeBPY), and tetrakis(2-pyridyl)pyrazine (TPPZ) to result in the crystallization of seven uranyl coordination polymers, which were characterized by their crystal structures and luminescence properties. The seven coordination polymers, Na2[(UO2)2(C6H2O4S)3]·4H2O (1), [(UO2)4(C6H2O4S)5(C10H8N2)2]·C10H10N2·3H2O (2), [(UO2)(C6H2O4S)(C12H12N3)] (3), [(UO2)(C6H2O4S)(C12H12N3)]·H2O (4), [(UO2)2(C6H2O4S)3]·(C12H14N2)·5H2O (5), [(UO2)3(CH3CO2)(C6H2O4S)4](C14H17N2)3·(C14H16N2)·H2O (6), and [(UO2)2(C6H2O4S)3](C24H18N6) (7), consist of either uranyl hexagonal bipyramidal or pentagonal bipyramidal coordination geometries. In all structures, structural variations in the local and global structures of 1–7 are influenced by the positions (or number) of methyl groups or pyridyl rings on the N-donor species, thus resulting in a wide diversity of structures ranging from single chains, double chains, or 2-D sheets. Direct coordination of N-donor ligands to uranyl centers is observed in the chain structures of 2–4 using BPY, 4-MeBPY, and 5-MeBPY, whereas the N-donor species participate as guests (as either neutral or charge balancing species) in the chain and sheet structures of 5–7 using 6-MeBPY, 4,6-MeBPY, and TPPZ, respectively. Compound 1 is the only structure that does not contain any N-donor ligands and thus crystallizes as a 2-D interpenetrating sheet. The luminescent properties of 1–7 are influenced by the direct coordination or noncoordination of N-donor species to uranyl centers. Compounds 2–4 exhibit typical UO22+ emission upon direct coordination of N-donors, but its absence is observed in 1

  16. 3,4-Dimethyl diphenyldithiophosphate of mononuclear cobalt(II) with N-donor ligands: Synthesis, structural characterization, DFT and antibacterial studies

    Science.gov (United States)

    Kumar, Sandeep; Kour, Gurpreet; Schreckenbach, Georg; Andotra, Savit; Hundal, Geeta; Sharma, Vishal; Jaglan, Sundeep; Pandey, Sushil K.

    2017-08-01

    3,4-Dimethyl diphenyldithiophosphate of cobalt(II) with N-donor ligands [{(ArO)2PS2}2CoL2] [Ar = 3,4-(CH3)2C6H3 (1-3); L = C5H5N (1), 3,4-(CH3)2C5H3N (2) and 4-(C2H5)C5H4N (3)] have been synthesized and characterized by elemental analyses, infrared spectroscopy (IR), powder X-ray diffraction (PXRD) and single crystal X-ray analysis. Complex 1 crystallizes in the monoclinic space group P21/n whereas complexes 2 and 3 crystallize in the triclinic space group Pbar1. The crystal structures of complexes 1-3 reveal mononuclear units with the Co(II) center chelated in bidentate fashion by four S atoms of the two diphenyldithiophosphate ligands. The N atoms from two donor ligands are axially coordinated, leading to distorted octahedral geometry around Co(II). The complexes have been optimized using density functional theory (DFT), structural parameters have been calculated, and the energy gaps of the frontier orbitals (HOMO-LUMO) have been predicted. Mayer bond orders have also been calculated. Structural parameters from the crystallographic and DFT studies are in good agreement with each other. To explore the biological potential, complexes were evaluated for their antibacterial activity against three bacterial strains. The bacterial growth inhibition capacity of the ligand and complexes followed the order of 3 > 2 > 1 > L1.

  17. N6-Benzyladenosine Derivatives as Novel N-Donor Ligands of Platinum(II Dichlorido Complexes

    Directory of Open Access Journals (Sweden)

    Ján Vančo

    2013-06-01

    Full Text Available The platinum(II complexes trans-[PtCl2(Ln2]∙xSolv 1–13 (Solv = H2O or CH3OH, involving N6-benzyladenosine-based N-donor ligands, were synthesized; Ln stands for N6-(2-methoxybenzyladenosine (L1, involved in complex 1, N6-(4-methoxy-benzyladenosine (L2, 2, N6-(2-chlorobenzyladenosine (L3, 3, N6-(4-chlorobenzyl-adenosine (L4, 4, N6-(2-hydroxybenzyladenosine (L5, 5, N6-(3-hydroxybenzyl-adenosine (L6, 6, N6-(2-hydroxy-3-methoxybenzyladenosine (L7, 7, N6-(4-fluoro-benzyladenosine (L8, 8, N6-(4-methylbenzyladenosine (L9, 9, 2-chloro-N6-(3-hydroxy-benzyladenosine (L10, 10, 2-chloro-N6-(4-hydroxybenzyladenosine (L11, 11, 2-chloro-N6-(2-hydroxy-3-methoxybenzyladenosine (L12, 12 and 2-chloro-N6-(2-hydroxy-5-methylbenzyladenosine (L13, 13. The compounds were characterized by elemental analysis, mass spectrometry, IR and multinuclear (1H-, 13C-, 195Pt- and 15N- and two-dimensional NMR spectroscopy, which proved the N7-coordination mode of the appropriate N6-benzyladenosine derivative and trans-geometry of the title complexes. The complexes 1–13 were found to be non-toxic in vitro against two selected human cancer cell lines (HOS and MCF7; with IC50 > 50.0 µM. However, they were found (by ESI-MS study to be able to interact with the physiological levels of the sulfur-containing biogenic biomolecule L-methionine by a relatively simple 1:1 exchange mechanism (one Ln molecule was replaced by one L-methionine molecule, thus forming a mixed-nitrogen/sulfur-ligand dichlorido-platinum(II coordination species.

  18. Electrical characterization of InAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Botha, L.; Shamba, P.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2008-07-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10{sup 18} cm{sup -3}) to strongly p-doped (p{proportional_to}10{sup 19} cm{sup -3}) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Electrical characterization of InAs thin films

    International Nuclear Information System (INIS)

    Botha, L.; Shamba, P.; Botha, J.R.

    2008-01-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10 18 cm -3 ) to strongly p-doped (p∝10 19 cm -3 ) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Critical surface phase of α2(2 × 4) reconstructed zig-zag chains on InAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xiang [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Zhou, Xun [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); School of Physics and Electronics Science, Guizhou Normal University, Guizhou, Guiyang 550001 (China); Wang, Ji-Hong [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Luo, Zi-Jiang [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); School of Education Administration, Guizhou University of Finance and Economics, Guizhou, Guiyang 550004 (China); Zhou, Qing; Liu, Ke; Hu, Ming-Zhe [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Ding, Zhao, E-mail: zding@gzu.edu.cn [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China)

    2014-07-01

    The critical condition for InAs(001) surface phase transition has been studied, the surface phase transition of InAs(001) showed discontinuity with hysteresis cycle as a function of substrate temperature. A mixed reconstruction surface and zig-zag chain α2(2 × 4) reconstruction surface have been observed by scanning tunneling microscopy. Considering the interaction and dynamics of surface arsenic atoms, the zig-zag chains of α2(2 × 4) reconstruction were found to be actually caused by the selective adsorption and desorption of surface arsenic dimers, they played a critical role in the surface phase transition between (2 × 4) and (4 × 2). - Highlights: • Discontinuous surface phase transition phenomena on the flat InAs(001) surface • Nanoscale InAs(001) surface observed by scanning tunneling microscopy • “Zig-Zag” chains of α2(2 × 4) reconstruction • Critical role in the surface phase transition between (2 × 4) and (4 × 2)

  1. Critical surface phase of α2(2 × 4) reconstructed zig-zag chains on InAs(001)

    International Nuclear Information System (INIS)

    Guo, Xiang; Zhou, Xun; Wang, Ji-Hong; Luo, Zi-Jiang; Zhou, Qing; Liu, Ke; Hu, Ming-Zhe; Ding, Zhao

    2014-01-01

    The critical condition for InAs(001) surface phase transition has been studied, the surface phase transition of InAs(001) showed discontinuity with hysteresis cycle as a function of substrate temperature. A mixed reconstruction surface and zig-zag chain α2(2 × 4) reconstruction surface have been observed by scanning tunneling microscopy. Considering the interaction and dynamics of surface arsenic atoms, the zig-zag chains of α2(2 × 4) reconstruction were found to be actually caused by the selective adsorption and desorption of surface arsenic dimers, they played a critical role in the surface phase transition between (2 × 4) and (4 × 2). - Highlights: • Discontinuous surface phase transition phenomena on the flat InAs(001) surface • Nanoscale InAs(001) surface observed by scanning tunneling microscopy • “Zig-Zag” chains of α2(2 × 4) reconstruction • Critical role in the surface phase transition between (2 × 4) and (4 × 2)

  2. Growth and electrical characterization of Zn-doped InAs and InAs1-xSbx

    International Nuclear Information System (INIS)

    Venter, A.; Shamba, P.; Botha, L.; Botha, J.R.

    2009-01-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs 1-x Sb x layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs 1-x Sb x epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  3. Entangled zinc-ditetrazolate frameworks involving in situ ligand synthesis and topological modulation by various secondary N-donor ligands

    International Nuclear Information System (INIS)

    Li Yunwu; Chen Weilin; Wang Yonghui; Li Yangguang; Wang Enbo

    2009-01-01

    The introduction of various secondary N-donor ligands into an in situ ditetrazolate-ligand synthesis system of terephthalonitrile, NaN 3 and ZnCl 2 led to the formation of three new entangled frameworks Zn(pdtz)(4,4'-bipy).3H 2 O (1), [Zn(pdtz)(bpp)] 2 .3H 2 O (2) and Zn(pdtz) 0.5 (N 3 )(2,2'-bipy) (3) (4,4'-bipy=4,4'-bipyridine; bpp=1,3-bis(4-pyridyl)propane; 2,2'-bipy=2,2'-bipyridine; H 2 pdtz=5,5'-1,4-phenylene-ditetrazole). The formation of pdtz 2- ligand involves the Sharpless [2+3] cycloaddition reaction between terephthalonitrile and NaN 3 in the presence of Zn 2+ ion as a Lewis-acid catalyst under hydrothermal conditions. Compound 1 exhibits a fivefold interpenetrating 3D framework based on the diamondoid topology. Compound 2 displays a twofold parallel interpenetrating framework based on the wavelike individual network. Compound 3 possesses a 2D puckered network. These new Zn-ditetrazolate frameworks are highly dependent on the modulation of different secondary N-donor ligands. Their luminescent properties were investigated. - Graphical abstract: Three new entangled frameworks were prepared by an in situ ditetrazolate-ligand synthesis system assisted with various auxiliary N-donor ligands. The entangled structures can be modulated by different secondary ligands.

  4. Diverse CdII coordination complexes derived from bromide isophthalic acid binding with auxiliary N-donor ligands

    International Nuclear Information System (INIS)

    Tang, Meng; Dong, Bao-Xia; Wu, Yi-Chen; Yang, Fang; Liu, Wen-Long; Teng, Yun-Lei

    2016-01-01

    The coordination characteristics of 4-bromoisophthalic acid (4-Br-H 2 ip) have been investigated in a series of Cd II -based frameworks. Hydrothermal reactions of Cd II salts and 4-Br-H 2 ip together with flexible or semiflexible N-donor auxiliary ligands resulted in the formation of four three-dimensional coordination complexes with diverse structures: (Cd(bix) 0.5 (bix) 0.5 (4-Br-ip)]·H 2 O) n (1), [Cd(bbi) 0.5 (bbi) 0.5 (4-Br-ip)] n (2), ([Cd(btx) 0.5 (4-Br-ip)(H 2 O)]·0.5CH 3 OH·H 2 O) n (3) and ([Cd(bbt) 0.5 (4-Br-ip)(H 2 O)]·3·5H 2 O) n (4). These compounds were characterized by elemental analyses, IR spectra, single-crystal and powder X-ray diffraction. They displayed diverse structures depending on the configuration of the 4-connected metal node, the coordination mode of the 4-Br-H 2 ip, the coordination ability and conformationally flexibility of the N-donor auxiliary. Compound 1 exhibits 3-fold interpenetrated 6 6 topology and compound 2 has a 4 12 topology. Compounds 3–4 have similar 3D pillar-layered structures based on 3,4-connected binodal net with the Schläfli symbol of (4·3 8 ). The thermal stabilities and photoluminescence properties of them were discussed in detail. - Graphical abstract: Four 3D Cd II coordination complexes on the basis of 4-bromoisophthalic acid (4-Br-H 2 ip) and two types of flexible (bbi, bbt) and semiflexible (bix, btx) N-donor ligands are prepared. They displayed diverse topology structures of 6 6 (1), 4 12 (2) and 4·3 8 (3−4), depending on the configuration of the 4-connected metal node, the coordination mode of the 4-Br-H 2 ip, the coordination ability and conformationally flexibility of the N-donor auxiliary ligand. - Highlights: • Four 3D Cd II coordination complexes based on 4-Br-H 2 ip and flexible/semiflexible N-donor ligands have been synthesized. • They displayed diverse topology structures of 6 6 for 1, 4 12 for 2 and 4·3 8 for 3–4. • The structural diversity depends on the configuration of 4-Br

  5. Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Yasuhiro [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Tex, David M.; Kanemitsu, Yoshihiko, E-mail: kanemitu@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Japan Science and Technology Agency, CREST, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kamiya, Itaru [Toyota Technological Institute, Nagoya, Aichi 468-8511 (Japan)

    2015-07-06

    The carrier upconversion dynamics in InAs quantum nanostructures are studied for intermediate-band solar-cell applications via ultrafast photoluminescence and photocurrent (PC) spectroscopy based on femtosecond excitation correlation (FEC) techniques. Strong upconverted PC-FEC signals are observed under resonant excitation of quantum well islands (QWIs), which are a few monolayer-thick InAs quantum nanostructures. The PC-FEC signal typically decays within a few hundred picoseconds at room temperature, which corresponds to the carrier lifetime in QWIs. The photoexcited electron and hole lifetimes in InAs QWIs are evaluated as functions of temperature and laser fluence. Our results provide solid evidence for electron–hole–hole Auger process, dominating the carrier upconversion in InAs QWIs at room temperature.

  6. Spin Injection, Manipulation, and Detection, in InAs Nanodevices

    Science.gov (United States)

    Jones, G. M.; Jonker, B. T.; Bennett, B. R.; Meyer, J. R.; Twigg, M. E.; Reinecke, T. L.; Park, D.; Pereverzev, S. V.; Badescu, C. S.; Li, C. H.; Hanbicki, A. T.; van'terve, O.; Vurgaftman, I.

    2008-03-01

    In this talk the authors will discuss their progress using InAs heterostructures to produce spin-polarized injection and detection, as well as manipulation of coherent spin-polarized electrons for a spin-based FET (SpinFET). High-quality n-type InAs heterostructures demonstrate many favorable characteristics necessary to the study of spin dynamics, including 2DEG's with small effective mass (m* = 0.023) and large g-factor (g = -15). Previously, high-mobility InAs heterostructures have been demonstrated in which electrons pass ballistically over hundreds of nanometers up to room temperature. Our devices seek to exploit the strong Spin-Orbit effect present in InAs to manipulate coherent spin-polarized electrons during transport, by producing perpendicular electric field using isolated top-gates fabricated over the electron transport region.

  7. Transport, electrochemical and thermophysical properties of two N-donor-functionalised ionic liquids.

    Science.gov (United States)

    Rüther, Thomas; Harris, Kenneth R; Horne, Michael D; Kanakubo, Mitsuhiro; Rodopoulos, Theo; Veder, Jean-Pierre; Woolf, Lawrence A

    2013-12-23

    Two N-donor-functionalised ionic liquids (ILs), 1-ethyl-1,4-dimethylpiperazinium bis(trifluoromethylsulfonyl)amide (1) and 1-(2-dimethylaminoethyl)-dimethylethylammonium bis(trifluoromethylsulfonyl)amide (2), were synthesised and their electrochemical and transport properties measured. The data were compared with the benchmark system, N-butyl-N-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide (3). Marked differences in thermal and electrochemical stability were observed between the two tertiary-amine-functionalised salts and the non-functionalised benchmark. The former are up to 170 K and 2 V less stable than the structural counterpart lacking a tertiary amine function. The ion self-diffusion coefficients (Di ) and molar conductivities (Λ) are higher for the IL with an open-chain cation (2) than that with a cyclic cation (1), but less than that with a non-functionalised, heterocyclic cation (3). The viscosities (η) show the opposite behaviour. The Walden [Λ[proportionality](1/η)(t) ] and Stokes-Einstein [Di /T)[proportionality](1/η)(t) ] exponents, t, are very similar for the three salts, 0.93-0.98 (±0.05); that is, the self-diffusion coefficients and conductivity are set by η. The Di for 1 and 2 are the same, within experimental error, at the same viscosity, whereas Λ for 1 is approximately 13% higher than that of 2. The diffusion and molar conductivity data are consistent, with a slope of 0.98±0.05 for a plot of ln(ΛT) against ln(D+ +D- ). The Nernst-Einstein deviation parameters (Δ) are such that the mean of the two like-ion VCCs is greater than that of the unlike ions. The values of Δ are 0.31, 0.36 and 0.42 for 3, 1 and 2, respectively, as is typical for ILs, but there is some subtlety in the ion interactions given 2 has the largest value. The distinct diffusion coefficients (DDC) follow the order D(d)__ < D(d)++ < D(d)+_, as is common for [Tf2N](-) salts. The ion motions are not correlated as in an electrolyte solution: instead, there is

  8. CO2 activation through silylimido and silylamido zirconium hydrides supported on N-donor chelating SBA15 surface ligand

    KAUST Repository

    Pasha, Fahran Ahmad

    2016-01-04

    Density functional theory calculations and 2D 1H-13C HETCOR solid state NMR spectroscopy prove that CO2 can probe, by its own reactivity, different types of N-donor surface ligands on SBA15-supported ZrIV hydrides: [(≡Si-O-)(≡Si-N=)[Zr]H] and [(≡Si-NH-)(≡Si-X-)[Zr]H2] (X = O or NH). Moreover, [(≡Si-O-)(≡Si-N=)[Zr]H] activates CO2 more efficiently than the other complexes and leads to a carbimato Zr formate.

  9. Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy

    International Nuclear Information System (INIS)

    Noda, Takeshi; Mano, Takaaki

    2008-01-01

    An InAs ring structure accompanying the formation of quantum dots (QDs) was fabricated on (1 0 0)GaAs using droplet epitaxy. The QDs were located in the vicinity of the ring, due to the diffusion of In atoms from the In droplets. In addition, the dots were found to have distributed elliptically and preferentially along the [0 1 1] direction, implying that In itself prefers to diffuse along the [0 1 1] direction, which is the opposite of the favorable diffusion orientation of group III atoms on (1 0 0)GaAs under a commonly used As-stabilized growth condition. This is the first observation of a ring structure accompanying the formation of quantum dots in droplet epitaxy

  10. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    International Nuclear Information System (INIS)

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  11. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  12. X-ray diffraction analysis of InAs nanowires

    International Nuclear Information System (INIS)

    Davydok, Anton

    2013-01-01

    Semiconductor nanowires have attracted great interest as building blocks for future electronic and optoelectronic devices. The variability of the growth process opens the opportunity to control and combine the various properties tailoring for specific application. It was shown that the electrical and optical characteristics of the nanowires are strongly connected with their structure. Despite intensive research in this field, the growth process is still not fully understood. In particular, extensive real structure investigations are required. Most of the reports dedicated on the structural researches are based on the results of scanning electron microscopy (SEM) or transmission electron microscopy (TEM). SEM provides an image of the surface with nanostructures and is mainly used to describe the morphology of the sample, but it does not bring information about the internal structure, phase composition and defect structure. At the same time, the internal structure can be examined by TEM down to atomic scale. TEM image of good quality are very expensive due to the efforts in sample preparation and in localisation of a single object. All these aspects make the statistical structural analysis difficult. In the present work, X-ray diffraction analysis has been applied for structural investigation of InAs nanowires grown by different techniques. Using various X-ray diffraction geometries, the nanowire systems were investigated in terms of the lattice parameters, phase composition, strains and displacement fields and stacking defects. In particular, realizing grazing incidence diffraction and controlling the penetration depth of X-ray beam, we characterized sample series grown by Au-assisted metal organic phase epitaxy on GaAs [111]B substrate with different growth time. According to the results of SEM and X-ray investigations, a model of the growth process has been proposed. A more detailed analysis was performed on InAs nanowires grown by molecular beam epitaxy (MBE) on

  13. 20 CFR 668.860 - What cash management procedures apply to INA grant funds?

    Science.gov (United States)

    2010-04-01

    ... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What cash management procedures apply to INA... Administrative Requirements § 668.860 What cash management procedures apply to INA grant funds? INA grantees must... implement the Cash Management Improvement Act, found at 31 CFR part 205, apply by law to most recipients of...

  14. Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

    2011-01-01

    In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

  15. Molecular dynamics growth modeling of InAs1-xSbx-based type-II superlattice

    Science.gov (United States)

    Ciani, Anthony J.; Grein, Christoph H.; Irick, Barry; Miao, Maosheng; Kioussis, Nicholas

    2017-09-01

    Type-II strained-layer superlattices (T2SL) based on InAs1-xSbx are a promising photovoltaic detector material technology for thermal imaging; however, Shockley-Read-Hall recombination and generation rates are still too high for thermal imagers based on InAs1-xSbx T2SL to reach their ideal performance. Molecular dynamics simulations using the Stillinger-Weber (SW) empirical potentials are a useful tool to study the growth of tetrahedral coordinated crystals and the nonequilibrium formation of defects within them, including the long-range effects of strain. SW potentials for the possible atomic interactions among {Ga, In, As, Sb} were developed by fitting to ab initio calculations of elastically distorted zinc blende and diamond unit cells. The SW potentials were tested against experimental observations of molecular beam epitaxial (MBE) growth and then used to simulate the MBE growth of InAs/InAs0.5Sb0.5 T2SL on GaSb substrates over a range of processes parameters. The simulations showed and helped to explain Sb cross-incorporation into the InAs T2SL layers, Sb segregation within the InAsSb layers, and identified medium-range defect clusters involving interstitials and their induction of interstitial-vacancy pairs. Defect formation was also found to be affected by growth temperature and flux stoichiometry.

  16. Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

    Energy Technology Data Exchange (ETDEWEB)

    Hu Dongzhi

    2007-02-13

    The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

  17. Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

    International Nuclear Information System (INIS)

    Hu Dongzhi

    2007-01-01

    The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

  18. Single-photon generation with InAs quantum dots

    International Nuclear Information System (INIS)

    Santori, Charles; Fattal, David; Vuckovic, Jelena; Solomon, Glenn S; Yamamoto, Yoshihisa

    2004-01-01

    Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed

  19. Preparation of InAs(0 0 1) surface for spin injection via a chemical route

    International Nuclear Information System (INIS)

    Singh, L J; Oliver, R A; Barber, Z H; Eustace, D A; McComb, D W; Clowes, S K; Gilbertson, A M; Magnus, F; Branford, W R; Cohen, L F; Buckle, L; Buckle, P D; Ashley, T

    2007-01-01

    A wet chemical surface treatment for InAs epilayers is investigated to remove the native semiconductor oxide prior to growth of a MgO tunnel barrier and Co ferromagnetic electrode by dc magnetron sputtering. Use of a HCl etch followed by (NH 4 ) 2 S as the pre-growth surface treatment resulted in pinhole-like features in the tunnel barrier, as observed by conducting atomic force microscopy, but this detrimental effect is avoided if the etch procedure is repeated twice. High resolution transmission electron microscopy revealed that the etched samples had uniform tunnel barriers and reducing the growth temperature of the barrier from 200 to 100 0 C significantly improved the abruptness of the semiconductor/barrier interface. Electrical characterization of barrier properties illustrated that all the etched samples showed parabolic differential conductance curves indicative of tunnelling behaviour at 300 K

  20. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

    2011-01-01

    InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological...... and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical...... characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

  1. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

    International Nuclear Information System (INIS)

    Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

    2004-01-01

    We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition

  2. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    International Nuclear Information System (INIS)

    Kadkhodazadeh, S; Dunin-Borkowski, R E; Semenova, E S; Schubert, M; Yvind, K; Thuvander, M; Stiller, K M

    2011-01-01

    InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

  3. Past and Present Development of INA's Liberalisation and Privatisation

    International Nuclear Information System (INIS)

    Lesic, A.; Stimac, B.

    2001-01-01

    The paper deals with the historical development aspects of the Croatian oil and gas industry INA. It describes the period from the very start of oil and gas production to the data of establishment of the Croatian state and afterwards. Some important milestones and political and economic events that impacted the development of the Croatian oil industry are described and commented, including changes toward liberalisation and privatisation of the oil and gas sector. The paper emphasises the role of INA in the Croatian economy and proposes some solutions for the liberalisation process and privatisation of the company that could prevent undesirable effects of privatisation and protect the interests of Croatia in the energy sector which is one of the main sectors of economy having influence on other production and service sectors and their competitiveness.(author)

  4. INA's Preparations for Liberalised Energy Market and Privatisation

    International Nuclear Information System (INIS)

    Dragicevic, T.; Kolundzic, S.

    2001-01-01

    Before opening of the market, energy entities must carry out numerous preparations in order to be ready for challenges of a competitive environment. Some preparations refer to legal and organisational issues, but many of them encompass reengineering of business processes, cost reduction schemes and various improvement measures aimed at maintenance or acquisition of a competitive advantage. INA is actively pursuing some of the above measures, but now, by the end of 2001, we also have to deal with preparations for privatisation. These two processes have some important common elements, competitiveness being certainly one of them. INA must work toward improving its competitive strength in the gas sector, in refining, in marketing of oil products, but also in various supporting activities. However, there are constraints that we have to observe, mainly related to social issues.(author)

  5. Reconstruction of an InAs nanowire using geometric tomography

    DEFF Research Database (Denmark)

    Pennington, Robert S.; König, Stefan; Alpers, Andreas

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

  6. 22 CFR 40.68 - Aliens subject to INA 222(g).

    Science.gov (United States)

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

  7. Komunikační mix Svatebního salonu INA

    OpenAIRE

    Rybníčková, Michala

    2015-01-01

    Rybníčková, M. Marketing mix for Wedding Boutique INA. Bachelor thesis, Brno: Mendel university in Brno, 2015 This Bechelor thesis focuses on the marketing mix for the company Wedding Boutique INA. Survey results are used to evaluate the effectiveness of marketing tools currently used by INA. Furthermore, the results are used to recommend improvements to the marketing mix. Thesis also includes calculation of costs and scheduling for the year 2015.

  8. Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Jens; Gottschalch, Volker; Paetzelt, Hendrik [Institut fuer Anorganische Chemie, Universitaet Leipzig, Johannesallee 29, D-04103 Leipzig (Germany); Wagner, Gerald [Institut fuer Kristallographie und Mineralogie, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig (Germany); Pietsch, Ulrich [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany)

    2008-07-01

    Semiconductor nanowires (NW) acquire recently attraction because of promising new application fields in electronics and optoelectronic. We applied the vapor-liquid-solid mechanism with gold seeds in combination with low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) to achieve replicable InAs NW growth with high growth rates. Since the initial alloying of the gold seeds with the substrate material plays a deciding role for the inceptive NW growth, InAs free standing nanowires were grown on GaAs(111)B substrate as well as on InAs/GaAs(111)B quasi-substrate. The influence of the MOVPE parameters will be discussed with respect to NW morphology and real-structure. A special focus will be set on the heteroepitaxial InAs NW growth on GaAs substrates. Gracing-incidence X-ray studies and transmission electron microscopy investigations revealed the existence of a thin Ga{sub x}In{sub 1-x}As graduated alloy layer with embedded crystalline gold alloy particles at the NW substrate interface. The effect of droplet composition on the VLS growth will be presented in a thermodynamic model.

  9. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

    Science.gov (United States)

    Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

    2018-06-01

    InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

  10. Strong composition-dependent disorder in InAs1-xNx alloys

    International Nuclear Information System (INIS)

    Benaissa, H.; Zaoui, A.; Ferhat, M.

    2009-01-01

    We investigate the main causes of disorder in the InAs 1-x N x alloys (x = 0, 0.03125, 0.0625, 0.09375, 0.125, 0.25, 0.5, 0.75, 0.875, 0.90625, 0.9375, 0.96875 and 1). The calculation is based on the density-functional theory in the local-density approximation. We use a plane wave-expansion non-norm conserving ab initio Vanderbilt pseudopotentials. To avoid the difficulty of considering the huge number of atomic configurations, we use an appropriate strategy in which we consider four configurations for a given composition where the N atoms are not randomly distributed. We mainly show that the band gap decreases (increases) rapidly with increasing (decreasing) compositions of N. As a consequence the optical band gap bowing is found to be strong and composition dependent. The obtained compounds, from these alloys, may change from semi-conducting to metal (passing to a negative bowing) and could be useful for device applications, especially at certain composition.

  11. 20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

    Science.gov (United States)

    2010-04-01

    ... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

  12. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

    2016-01-01

    on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro...

  13. 20 CFR 668.710 - What planning documents must an INA grantee submit?

    Science.gov (United States)

    2010-04-01

    ... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What planning documents must an INA grantee... Planning/Funding Process § 668.710 What planning documents must an INA grantee submit? Each grantee... participant services and expenditures covering the two-year planning cycle. We will, in consultation with the...

  14. A soft lithographic approach to fabricate InAs nanowire field-effect transistors

    DEFF Research Database (Denmark)

    Madsen, Morten; Lee, S. H.; Shin, S.-H.

    2018-01-01

    -down approach and an epitaxial layer transfer process, using MBE-grown ultrathin InAs as a source wafer. The width of the InAs nanowires was controlled using solvent-assisted nanoscale embossing (SANE), descumming, and etching processes. By optimizing these processes, NWs with a width less than 50 nm were...

  15. Upotreba začina u proizvodnji tradicionalnih sireva

    OpenAIRE

    Josipović, Renata; Markov, Ksenija; Frece, Jadranka; Stanzer, Damir; Cvitković, Ante; Mrvčić, Jasna

    2016-01-01

    Sir je visoko cijenjeni mliječni proizvod u mnogim zemljama svijeta, a posebna pažnja pridaje se tradicionalnim sirevima, koji nisu samo hrana već i dio kulture i obilježja neke zemlje. Zahvaljujući zemljopisnom položaju i klimatsko-vegetacijskoj raznolikosti Republike Hrvatske, u pojedinim regijama razvijena je proizvodnja različitih tradicionalnih sireva uz upotrebu začina. Kod proizvodnje sireva sa začinima, začini se dodaju ili u sir koji se potom oblikuje, ili se sir omata lišćem začinsk...

  16. Nonlinear refraction at the absorption edge in InAs.

    Science.gov (United States)

    Poole, C D; Garmire, E

    1984-08-01

    The results of measurements of nonlinear refraction at the absorption edge in InAs between 68 and 90 K taken with an HF laser are compared with those of a band-gap resonant model in which the contribution of the light-hole band is included and found to account for more than 40% of the observed nonlinear refraction. A generalized expression for the nonlinear index is derived by using the complete Fermi-Dirac distribution function. Good agreement between theory and experiment is obtained, with no free parameters.

  17. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  18. INA-Rxiv: The Missing Puzzle in Indonesia’s Scientific Publishing Workflow

    Science.gov (United States)

    Rahim, R.; Irawan, D. E.; Zulfikar, A.; Hardi, R.; Arliman S, L.; Gultom, E. R.; Ginting, G.; Wahyuni, S. S.; Mesran, M.; Mahjudin, M.; Saputra, I.; Waruwu, F. T.; Suginam, S.; Buulolo, E.; Abraham, J.

    2018-04-01

    INA-Rxiv is the first Indonesia preprint server marking the new development initiated by the open science community. This study aimed at describing the development of INA-Rxiv and its conversations. It usedanalyzer of Inarxiv.id, WhatsApp Group Analyzer, and Twitter Analytics as the tools for data analysis complemented with observation.The results showed that INA-Rxiv users are growing because of the numerous discussions in social media, e.g.WhatsApp,as well as some other positive response of writers who have been using INA- Rxiv. The perspective of growth mindset and the implication of INA-Rxiv movement for filling up the gap in accelerating scientific dissemination process are presented at the end of this article.

  19. Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure

    International Nuclear Information System (INIS)

    Park, C.Y.; Park, K.W.; Kim, J.M.; Lee, Y.T.

    2009-01-01

    Multiple InAs/GaAs self-assembled quantum dots (QDs) with vertically stacked structure are grown by molecular beam epitaxy and the effects of GaAs interlayer thickness variation on optical properties are studied. The growth conditions are optimized by in-situ RHEED, AFM, and PL measurement. The five InAs QD layers are embedded in GaAs and Al0.3Ga0.7As layer. The PL intensity is increased with increasing GaAs interlayer thickness. The thin GaAs interlayer has strain field, the strain-induced intermixing of indium atoms in the InAs QDs (blue-shift) can overcompensate for the effect on the increased QD size (red-shift) (H. Heidemeyer et al. Appl. Phys. Lett. 80, 1544 (2002); T. Nakaoka et al. J. Appl. Phys. Lett. 96, 150 (2004)[1, 2], respectively). For the interlayer thickness larger than about 7 nm, the blue-shifts are correlated to the dominant high-energy excited state transitions due to the successive state filling of the ground and higher excited states in the QDs. The energy separation of double PL peaks, originated from two different excited states, was kept at around 50 meV at room temperature. A possible mechanism concerning this phenomenon is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

    International Nuclear Information System (INIS)

    Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

    2013-01-01

    We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

  1. Self-assembled monolayers of alkyl-thiols on InAs: A Kelvin probe force microscopy study

    Science.gov (United States)

    Szwajca, A.; Wei, J.; Schukfeh, M. I.; Tornow, M.

    2015-03-01

    We report on the preparation and characterization of self-assembled monolayers from aliphatic thiols with different chain length and termination on InAs (100) planar surfaces. This included as first step the development and investigation of a thorough chemical InAs surface preparation step using a dedicated bromine/NH4OH-based etching process. Ellipsometry, contact angle measurements and atomic force microscopy (AFM) indicated the formation of smooth, surface conforming monolayers. The molecular tilt angles were obtained as 30 ± 10° with respect to the surface normal. Kelvin probe force microscopy (KPFM) measurements in hand with Parameterized Model number 5 (PM5) calculations of the involved molecular dipoles allowed for an estimation of the molecular packing densities on the surface. We obtained values of up to n = 1014 cm- 2 for the SAMs under study. These are close to what is predicted from a simple geometrical model that would calculate a maximum density of about n = 2.7 × 1014 cm- 2. We take this as additional conformation of the substrate smoothness and quality of our InAs-SAM hybrid layer systems.

  2. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kesler, V.G., E-mail: kesler@isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation); Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A. [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation)

    2010-05-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10{sup 8} cm{sup -2}, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  3. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    Science.gov (United States)

    Kesler, V. G.; Seleznev, V. A.; Kovchavtsev, A. P.; Guzev, A. A.

    2010-05-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 °C. Etching for 2-30 min resulted in the formation of "pits" and "hillocks" on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 × 10 8 cm -2, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 °C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the "pits" proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  4. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    International Nuclear Information System (INIS)

    Kesler, V.G.; Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A.

    2010-01-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10 8 cm -2 , entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  5. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    International Nuclear Information System (INIS)

    Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

    2012-01-01

    Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  6. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Henegar, A.J., E-mail: henegar1@umbc.edu; Gougousi, T., E-mail: gougousi@umbc.edu

    2016-12-30

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and TiO{sub 2} is compared. Al{sub 2}O{sub 3} if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al{sub 2}O{sub 3} ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al{sub 2}O{sub 3} limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al{sub 2}O{sub 3} and TiO{sub 2}, using H{sub 2}O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al{sub 2}O{sub 3} ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO{sub 2} and the native oxides continues well after the surface has been covered with 2 nm of TiO{sub 2}. This difference is traced to the superior properties of Al{sub 2}O{sub 3} as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to

  7. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    International Nuclear Information System (INIS)

    Henegar, A.J.; Gougousi, T.

    2016-01-01

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al_2O_3 and TiO_2 is compared. Al_2O_3 if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al_2O_3 ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al_2O_3 limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al_2O_3 and TiO_2, using H_2O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al_2O_3 ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO_2 and the native oxides continues well after the surface has been covered with 2 nm of TiO_2. This difference is traced to the superior properties of Al_2O_3 as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to lower native oxide stability as well as an initial diffusion path formation by the indium oxides.

  8. Adsorbed layers on (111)InAs faces in contact with In-As-Cl-H gas phase, and the possibility of phase transitions in the adsorbed layers

    Science.gov (United States)

    Chernov, A. A.; Ruzaikin, M. P.

    1981-04-01

    Adsorption of various species existing in the In-As-Cl-H CVD gaseous system on both InAs (111) faces is considered. Arsenic is supposed to be adsorbed in the form of triangles As 3 and tetrahedrons As 4, each of them occupying 3 atomic sites above In or As atoms on (111)In or (111)As, respectively. The system of polyatomic adsorption equations was used to find the coverages of the faces by various species. Admolecule-surface bond strengths are taken to be equal to the ones for the single bonds in molecules. Pauling electronegativities were used to find the effective charges of the atoms in the adsorption layer. Thus, the dipole moments of adsorbed molecules which arise are directed along the In-As bonds in the InAs lattice. With this geometry, the calculated electrostatic dipole-dipole attraction between InCl molecules forming a dense layer on (111)As exceeds 12 kcal/mol. Thus, condensation of the two-dimensional gas of adsorbed InCl molecules should be expected. Corresponding S-shape isotherms θ( P) are calculated for different As 3 vapor pressures, θ and P being the surface coverage and bulk vapor pressure of InCl. Intervals of {InCl 3}/{H 2} ratios at different temperatures where the two-dimensional condensation may occur, are presented for realistic CVD conditions. Two-dimensional condensation may result in sharp changes in kinetic coefficient and thus in autho-oscillations in growth rate and doping level creating periodic superstructures. Nucleation and CVD growth processes are discussed.

  9. Progress in low light-level InAs detectors- towards Geiger-mode detection

    Science.gov (United States)

    Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey

    2017-05-01

    InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.

  10. Synthesis and photoluminescence properties of silver(I) complexes based on N-benzoyl-L-glutamic acid and N-donor ligands with different flexibility

    Science.gov (United States)

    Yan, Ming-Jie; Feng, Qi; Song, Hui-Hua

    2016-05-01

    By changing the N-donor ancillary ligand, three novel silver (I) complexes {[Ag(HbzgluO) (4,4‧-bipy)]·H2O}n (1), {[Ag2(HbzgluO)2 (bpe)2]·2H2O}n (2) and {[Ag(HbzgluO)(bpp)]·2H2O}n (3) (H2bzgluO = N-benzoyl-L-glutamic acid, 4,4‧-bipy = 4,4ˊ-bipyridine, bpe = 1,2-di(4-pyridyl)ethane, bpp = 1,3-di(4-pyridyl)propane) were synthesized. Their structures have been determined by single-crystal X-ray diffraction analyses and further characterized by elemental analyses, IR spectra, powder X-ray diffraction (PXRD), and thermogravimetric analyses (TGA). In this study, the N-donor ligands are changed from rigidity (4,4‧-bipy), quasi-flexibility (bpe) to flexibility (bpp), the structures of complexes also change. Complex 1 features a 1D chain structure which is further linked together to construct a 2D supramolecular structure through hydrogen bonds. Complex 2 is a 1D double-chains configuration which eventually forms a 3D supramolecular network via hydrogen bonding interactions. Whereas, complex 3 exhibits a 2D pleated grid structure which is linked by hydrogen bonding interactions into a 3D supramolecular network. The present observations demonstrate that the modulation of coordination polymers with different structures can accomplish by changing the spacer length of N-donor ligands. In addition, the solid-state circular dichroism (CD) spectra indicated that compound 2 exhibited negative cotton effect which originated from the chiral ligands H2bzgluO and the solid-state fluorescence spectra of the three complexes demonstrated the auxiliary ligands have influence on the photoluminescence properties of the complexes.

  11. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

    International Nuclear Information System (INIS)

    Usman, Muhammad; O’Reilly, Eoin P; Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana; Klimeck, Gerhard

    2012-01-01

    III–V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In–Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response. (paper)

  12. Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

    Science.gov (United States)

    Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

    2008-07-01

    This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

  13. An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhi [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, Xiang-Wei; Li, Shu-Shen [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wang, Lin-Wang, E-mail: lwwang@lbl.gov [Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2014-03-24

    We have presented a fully atomistic quantum mechanical simulation method on band-to-band tunneling (BTBT) field-effect transistors (FETs). Our simulation approach is based on the linear combination of bulk band method with empirical pseudopotentials, which is an atomist method beyond the effective-mass approximation or k.p perturbation method, and can be used to simulate real-size devices (∼10{sup 5} atoms) efficiently (∼5 h on a few computational cores). Using this approach, we studied the InAs dual-gate BTBT FETs. The I-V characteristics from our approach agree very well with the tight-binding non-equilibrium Green's function results, yet our method costs much less computationally. In addition, we have studied ways to increase the tunneling current and analyzed the effects of different mechanisms for that purpose.

  14. An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors

    International Nuclear Information System (INIS)

    Wang, Zhi; Jiang, Xiang-Wei; Li, Shu-Shen; Wang, Lin-Wang

    2014-01-01

    We have presented a fully atomistic quantum mechanical simulation method on band-to-band tunneling (BTBT) field-effect transistors (FETs). Our simulation approach is based on the linear combination of bulk band method with empirical pseudopotentials, which is an atomist method beyond the effective-mass approximation or k.p perturbation method, and can be used to simulate real-size devices (∼10 5 atoms) efficiently (∼5 h on a few computational cores). Using this approach, we studied the InAs dual-gate BTBT FETs. The I-V characteristics from our approach agree very well with the tight-binding non-equilibrium Green's function results, yet our method costs much less computationally. In addition, we have studied ways to increase the tunneling current and analyzed the effects of different mechanisms for that purpose

  15. Diverse Cd(II) compounds based on N-benzoyl-L-glutamic acid and N-donor ligands: Structures and photoluminescent properties

    International Nuclear Information System (INIS)

    Ma, Ning; Guo, Wei-Ying; Song, Hui-Hua; Yu, Hai-Tao

    2016-01-01

    Five new Cd(II) coordination polymers with N-benzoyl-L-glutamic acid (H_2bzgluO) and different N-donor ligands, [Cd(bzgluO)(2,2′-bipy)(H_2O)]_n (1), [Cd(bzgluO)(2,4′-bipy)_2(H_2O)·3H_2O]_n (2), [Cd(bzgluO)(phen)·H_2O]_n (3), [Cd(bzgluO)(4,4′-bipy)(H_2O)]_n (4), [Cd(bzgluO)(bpp)(H_2O)·2H_2O]_n (5) were synthesized (2,2′-bipy=2,2′-bipyridine, 2,4′-bipy=2,4′-bipyridine, phen=1,10-phenanthroline, 4,4′-bipy=4,4′-bipyridine, bpp=1,3-di(4-pyridyl)propane). Compounds 1–2 exhibit a 1D single-chain structure. Compound 1 generates a 2D supramolecular structure via π–π stacking and hydrogen bonding, 3D architecture of compound 2 is formed by hydrogen bonding. Compound 3 features a 1D double-chain structure, which are linked by π–π interactions into a 2D supramolecular layer. Compounds 4-5 display a 2D network structure. Neighboring layers of 4 are extended into a 3D supramolecular architecture through hydrogen bonding. The structural diversity of these compounds is attributed to the effect of ancillary N-donor ligands and coordination modes of H_2bzgluO. Luminescent properties of 1–5 were studied at room temperature. Circular dichroism of compounds 1, 2 and 5 were investigated. - Graphical abstract: Five new Cd(II) metal coordination compounds with H_2bzgluO and different N-donor ligands were synthesized and characterized. Compounds 1, 2 and 3 present 1D structures, compounds 4 and 5 display 2D networks. Results indicate that auxiliary ligands and coordination modes of H_2bzgluO play an important role in governing the formation of final frameworks, and the hydrogen-bonding and π–π stacking interactions contribute the formation of the diverse supramolecular architectures. Furthermore, the different crystal structures influence the emission spectra significantly. - Highlights: • It is rarely reported that complexes prepared with N-benzoyl-L-glutamic acid. • Each complex displays diverse structures and different supramolecular

  16. Self-Assembled InAs Nanowires as Optical Reflectors

    Directory of Open Access Journals (Sweden)

    Francesco Floris

    2017-11-01

    Full Text Available Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

  17. Spin interactions in InAs quantum dots

    Science.gov (United States)

    Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

  18. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  19. Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

    Science.gov (United States)

    Jewett, Scott A; Ivanisevic, Albena

    2012-09-18

    In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can

  20. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    Science.gov (United States)

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  1. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

    International Nuclear Information System (INIS)

    Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

    2014-01-01

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

  2. Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

    NARCIS (Netherlands)

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Dagli, N.; Fiore, A.

    2007-01-01

    The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.

  3. Electrical characterisation of Sn doped InAs grown by MOVPE

    International Nuclear Information System (INIS)

    Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

    2008-01-01

    The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. La costituzione dell’INA e il monopolio statale delle assicurazioni (1912-1922 = The constitution of INA and the state monopoly of insurance (1912-1922

    Directory of Open Access Journals (Sweden)

    Serena Potito

    2012-07-01

    Full Text Available Il saggio –basato principalmente su documenti attualmente conservati presso l’Archivio Storico dell’INA, a Roma– esamina le vicende legate alla nascita dell’Istituto, costituito in un regime transitorio di monopolio relativo nel settore delle assicurazioni sulla vita.A causa del suo significato economico e politico, questa speciale forma di monopolio statale diede luogo a molte reazioni nell’ambito finanziario e politico nazionale, pertanto l’INA iniziò i primi anni di attività in una situazione conflittuale ed incerta.Il saggio inoltre approfondisce le ripercussioni sul mercato assicurativo internazionale in seguito alla nascita dell’INA.Durante il decennio di monopolio parziale dell’Istituto nel settore delle assicurazioni sulla vita (1912-1922, le compagnie di assicurazione straniere ritennero compromessi i loro interessi finanziari nel mercato italiano, e lo osteggiarono fino al 1923, quando una nuova legge riformò il mercato assicurativo sulla vita, abolendo il regime di monopolio.The essay –mainly based on documents actually preserved in the Historical Archives of INA, in Rome– examines the events connected with the foundation of the Institute, established in a transient condition of partial monopoly system in life insurance sector. Because of its economic and political meaning, this special form of state monopoly gave rise to many reactions in the financial and political national context, and so INA started its first years of activity in a troubled and unstable situation. The essay also discusses about the repercussions on international insurance market in consequence of the foundation of INA.During the ten-year perior of partial monopoly of the Institute in life insurance sector (1912-1922, foreign insurance companies deemed their financial interest in Italian market jeopardized, and contrasted with it until 1923, when a new act reformed life insurance market, abrogating monopoly system. 

  5. Awareness of the Vysočina Regional Food Labels With Context of Their Media Presence

    Directory of Open Access Journals (Sweden)

    Martina Chalupová

    2016-01-01

    Full Text Available The article presents results of research study that focused on the recognition of the Vysočina regional labels among the consumers in the region in connection with media analysis about the topic. Research among consumers was conducted in each district of Vysočina Region (Jihlava, Žďár nad Sázavou, Třebíč, Havlíčkův Brod and Pelhřimov by interviewing a sample of 819 respondents, selected by quota sampling methods. The research was aimed at analysing the ability of respondents to recognise and differentiate two existing regional labels VYSOČINA Regional Product®, Regional Food Vysočina Region and also nonexistent brand From Our Region Vysočina, created by authors. Data have been processed with correspondence analysis and showed that respondents connect different characteristics with the labels. Media analysis of the Vysočina regional labels revealed that media may help building awareness about the labels but they do not shape respondents’ views on them. Examining the link between the frequency of different types of information in media and their potential impact on the labels’ pereception by consumers have shown distorted image. Stronger consensus between research and media analysis have been examined only on importance of products’ origin, which can be viewed as a logical inference from the name of the labels.

  6. Studies on the controlled growth of InAs nanostructures on scission surfaces; Untersuchungen zum kontrollierten Wachstum von InAs-Nanostrukturen auf Spaltflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, J.

    2006-01-15

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {l_brace}110{r_brace}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {l_brace}110{r_brace}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  7. Scheme for teleporting an unknown atomic state to any node in a quantum communication network

    Institute of Scientific and Technical Information of China (English)

    宋克慧; 张为俊; 郭光灿

    2002-01-01

    We propose a scheme for teleporting an unknown atomic state. In order to realize the teleportation to any node ina quantum communication network, an n-atom Greenberger-Horne-Zeilinger (GHZ) state is needed, which is utilizedas the quantum channel. From this n-atom GHZ state, two-node entanglement of processing and receiving teleportedstates can be obtained through the quantum logic gate manipulation. Finally, for the unequally weighted GHZ state,probabilistic teleportation is shown.

  8. Diverse Cd(II) compounds based on N-benzoyl-L-glutamic acid and N-donor ligands: Structures and photoluminescent properties

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ning; Guo, Wei-Ying; Song, Hui-Hua, E-mail: songhuihua@mail.hebtu.edu.cn; Yu, Hai-Tao, E-mail: haitaoyu@mail.hebtu.edu.cn

    2016-01-15

    Five new Cd(II) coordination polymers with N-benzoyl-L-glutamic acid (H{sub 2}bzgluO) and different N-donor ligands, [Cd(bzgluO)(2,2′-bipy)(H{sub 2}O)]{sub n} (1), [Cd(bzgluO)(2,4′-bipy){sub 2}(H{sub 2}O)·3H{sub 2}O]{sub n} (2), [Cd(bzgluO)(phen)·H{sub 2}O]{sub n} (3), [Cd(bzgluO)(4,4′-bipy)(H{sub 2}O)]{sub n} (4), [Cd(bzgluO)(bpp)(H{sub 2}O)·2H{sub 2}O]{sub n} (5) were synthesized (2,2′-bipy=2,2′-bipyridine, 2,4′-bipy=2,4′-bipyridine, phen=1,10-phenanthroline, 4,4′-bipy=4,4′-bipyridine, bpp=1,3-di(4-pyridyl)propane). Compounds 1–2 exhibit a 1D single-chain structure. Compound 1 generates a 2D supramolecular structure via π–π stacking and hydrogen bonding, 3D architecture of compound 2 is formed by hydrogen bonding. Compound 3 features a 1D double-chain structure, which are linked by π–π interactions into a 2D supramolecular layer. Compounds 4-5 display a 2D network structure. Neighboring layers of 4 are extended into a 3D supramolecular architecture through hydrogen bonding. The structural diversity of these compounds is attributed to the effect of ancillary N-donor ligands and coordination modes of H{sub 2}bzgluO. Luminescent properties of 1–5 were studied at room temperature. Circular dichroism of compounds 1, 2 and 5 were investigated. - Graphical abstract: Five new Cd(II) metal coordination compounds with H{sub 2}bzgluO and different N-donor ligands were synthesized and characterized. Compounds 1, 2 and 3 present 1D structures, compounds 4 and 5 display 2D networks. Results indicate that auxiliary ligands and coordination modes of H{sub 2}bzgluO play an important role in governing the formation of final frameworks, and the hydrogen-bonding and π–π stacking interactions contribute the formation of the diverse supramolecular architectures. Furthermore, the different crystal structures influence the emission spectra significantly. - Highlights: • It is rarely reported that complexes prepared with N-benzoyl-L-glutamic acid

  9. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

    CSIR Research Space (South Africa)

    Baisitse, TR

    2006-07-01

    Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

  10. Diverse Cd(II) compounds based on N-benzoyl-L-glutamic acid and N-donor ligands: Structures and photoluminescent properties

    Science.gov (United States)

    Ma, Ning; Guo, Wei-Ying; Song, Hui-Hua; Yu, Hai-Tao

    2016-01-01

    Five new Cd(II) coordination polymers with N-benzoyl-L-glutamic acid (H2bzgluO) and different N-donor ligands, [Cd(bzgluO)(2,2‧-bipy)(H2O)]n (1), [Cd(bzgluO)(2,4‧-bipy)2(H2O)·3H2O]n (2), [Cd(bzgluO)(phen)·H2O]n (3), [Cd(bzgluO)(4,4‧-bipy)(H2O)]n (4), [Cd(bzgluO)(bpp)(H2O)·2H2O]n (5) were synthesized (2,2‧-bipy=2,2‧-bipyridine, 2,4‧-bipy=2,4‧-bipyridine, phen=1,10-phenanthroline, 4,4‧-bipy=4,4‧-bipyridine, bpp=1,3-di(4-pyridyl)propane). Compounds 1-2 exhibit a 1D single-chain structure. Compound 1 generates a 2D supramolecular structure via π-π stacking and hydrogen bonding, 3D architecture of compound 2 is formed by hydrogen bonding. Compound 3 features a 1D double-chain structure, which are linked by π-π interactions into a 2D supramolecular layer. Compounds 4-5 display a 2D network structure. Neighboring layers of 4 are extended into a 3D supramolecular architecture through hydrogen bonding. The structural diversity of these compounds is attributed to the effect of ancillary N-donor ligands and coordination modes of H2bzgluO. Luminescent properties of 1-5 were studied at room temperature. Circular dichroism of compounds 1, 2 and 5 were investigated.

  11. A series of coordination polymers constructed from R-isophthalic acid (R=–SO{sub 3}H, –NO{sub 2}, and –OH) and N-donor ligands: Syntheses, structures and fluorescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yong-Hong, E-mail: zhou21921@sina.com [School of Chemistry and Material Science, Huaibei Normal University, Huaibei 235000 (China); Zhou, Xu-Wan; Zhou, Su-Rong [School of Chemistry and Material Science, Huaibei Normal University, Huaibei 235000 (China); Tian, Yu-Peng; Wu, Jie-Ying [Department of Chemistry and Chemical Technology, Anhui University, Hefei 230039 (China)

    2017-01-15

    Six novel Zn(II), Cd(II), and Cu(II) mixed-ligand coordination complexes, namely, [Zn{sub 2}Na(sip){sub 2}(bpp){sub 3}(Hbpp)(H{sub 2}O){sub 2}]·8H{sub 2}O (1), [Cd{sub 3}(sip){sub 2}(nbi){sub 6}(H{sub 2}O){sub 2}]·7H{sub 2}O (2), [Zn(sip)(nbi){sub 2}(H{sub 2}O)]·Hnbi·3H{sub 2}O (3), [Cd(hip)(nbi){sub 2}(H{sub 2}O)]·nbi·5H{sub 2}O (4), [Cd{sub 2}(nip){sub 2}(nbi){sub 2}(H{sub 2}O){sub 2}]·DMF (5), and [Cu(nip)(nbi)(H{sub 2}O){sub 2}]·H{sub 2}O (6) (H{sub 3}sip=5-sulfoisophthalic acid, H{sub 2}hip=5-hydroxylisophthalic acid, H{sub 2}nip=5-nitroisophthalic acid, bpp=1,3-bis(4-pyridyl)propane, and nbi=6-nitrobenzimidazole) have been synthesized hydrothermally by the self-assembly of R-isophthalic acid (R=–SO{sub 3}H, –NO{sub 2}, and –OH) and N-donor ligands. Single crystal X-ray analyses reveal that two Zn(II) ions and one Na(I) ion of complex 1 are linked through O atoms to generate a 1D linear chain. Then the 2D supramolecular architectures are constructed via intermolecular interactions. In complex 2, the Cd1 ions are connected by bridging carboxyl groups from sip{sup 3−} anions to form 1D double chain, which are further connected by Cd2 ions to afford 2D layer structure. The adjacent 2D layers are further linked via hydrogen-bonding interactions to give 3D supramolecular network. Compounds 3–5 show 1D chain structures, which are assembled into 2D or 3D supramolecular frameworks via weak interactions. In compound 6, the Cu(II) ions are bridged by the nip{sup 2−} ligands to form 48-membered ring, which is assembled into 1Dchain via the π-π stacking interaction. In addition, the thermal stabilities and fluorescence properties of these compounds have also been studied. - Graphical abstract: A series of Cd(II)/Zn(II)/ Cu(II) coordination polymers based on R-isophthalic acid (R=–SO{sub 3}H, –NO{sub 2}, and –OH) and N-donor ligands have been synthesized under hydrothermal conditions and structurally characterized. Photoluminescent properties

  12. InAs quantum dots as charge storing elements for applications in flash memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul; Biswas, Pranab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)

    2015-08-15

    Graphical abstract: - Highlights: • Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO{sub 2}. • Memory device with InAs quantum dots as charge storage nodes are fabricated. • Superior memory window, low leakage and reasonably good retention were observed. • Carrier transport phenomena are explained in both program and erase operations. - Abstract: InAs quantum dots (QDs) were grown by metal organic chemical vapor deposition technique to use them as charge storage nodes. Uniform QDs were formed with average diameter 5 nm and height 5–10 nm with a density of 2 × 10{sup 11} cm{sup −2}. The QDs were grown on high-k dielectric layer (ZrO{sub 2}), which was deposited onto ultra-thin GaP passivated p-GaAs (1 0 0) substrate. A charge storage device with the structure Metal/ZrO{sub 2}/InAs QDs/ZrO{sub 2}/(GaP)GaAs/Metal was fabricated. The devices containing InAs QDs exhibit superior memory window, low leakage current density along with reasonably good charge retention. A suitable electronic band diagram corresponding to programming and erasing operations was proposed to explain the operation.

  13. Electronic and optical properties of graphene-like InAs: An ab initio study

    Science.gov (United States)

    Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

    2018-03-01

    The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

  14. Channeling study of laser-induced defect generation in InP and InAs

    International Nuclear Information System (INIS)

    Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

    1992-01-01

    Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

  15. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

    International Nuclear Information System (INIS)

    Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

    2014-01-01

    Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

  16. Growth-interruption-induced low-density InAs quantum dots on GaAs

    International Nuclear Information System (INIS)

    Li, L. H.; Alloing, B.; Chauvin, N.; Fiore, A.; Patriarche, G.

    2008-01-01

    We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/μm 2 ) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 μm emission at 4 K

  17. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  18. Neutron diffraction determination of mean-square atomic displacements

    International Nuclear Information System (INIS)

    Tibballs, J.E.; Feteris, S.M.; Barnea, Z.

    1981-01-01

    Integrated intensities for Bragg reflection of neutrons from single crystals of the III-V compounds, InAs and GaSb, have been measured at room temperature. The data were collected at two wavelengths, 0.947 A and 1.241 A, in order to establish the adequacy of a correction for moderate to severe anisotropic extinction. Data were also obtained for InAs at four temperatures from 408 K to 933 K. Corrections for thermal diffuse scattering were applied. The results were analysed in the one-particle potential approximation with terms to fourth-order in the atomic displacements u = (u 1 , u 2 , u 3 ). At 296 K, the mean-square components were determined for In, 0.0116(2)A 2 and As, 0.0102 (1)A 2 ; for Ga, 0.0120(3)A 2 and Sb, 0.0107(3)A 2 . The third-order coefficients for InAs are comparable with those for Si and Ge, those for GaSb with those for zinc chalcogenides. Non-harmonic behaviour in InAs is observed below 400 K

  19. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  20. Spin effects in InAs self-assembled quantum dots

    Directory of Open Access Journals (Sweden)

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  1. Jezdecké stezky v kraji Vysočina

    OpenAIRE

    Bendeová, Tereza

    2014-01-01

    This bachelor thesis discusses the topic of riding trails in the Vysočina region. At the beginning I discuss the role of equestrian tourism in the Czech Republic. There are briefly described origins and conditions of riding trails in the regions and also the list of the public support and grants for development of equestrian tourism. The next part focuses on chosen region and characterizes its natural and cultural heritage. There are also described several trails through the Vysočina region. ...

  2. Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

    Science.gov (United States)

    Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

    2018-09-01

    We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

  3. Hall and thermoelectric evaluation of p-type InAs

    International Nuclear Information System (INIS)

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  4. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

    International Nuclear Information System (INIS)

    Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

    2005-01-01

    We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

  5. Intrinsic quantum dots in InAs nanowires

    International Nuclear Information System (INIS)

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  6. Synthesis and characterization of rhodium(I) complexes with P-N donor ligands and their catalytic application in transfer hydrogenation of carbonyl group

    Energy Technology Data Exchange (ETDEWEB)

    Barah, Geetika; Sarmah, Podma Poliov; Boruah, Devajani [Dept. of Chemistry, Dibrugarh University, Dibrugarh (India)

    2015-04-15

    Three rhodium(I) complexes of the types [Rh(COE)Cl(η{sup 2}-L)] (1a,1b) and [RhCl(η{sup 2}-L) (η{sup 1}-L)] (1c), where L = P⁓N donor ligands 2-[2-(diphenylphosphino) ethyl]pyridine, (PPh{sub 2}Etpy) (a), 2-(diphenylphosphino)pyridine (PPh{sub 2}py) (b), and 3-(diphenylphosphino)-1-propylamine (PPh{sub 2}(CH{sub 2}){sub 3}NH{sub 2}) (c), have been synthesized by reacting [Rh(coe){sub 2}Cl]{sub 2} with the respective ligands in 1:2 molar ratio for 1a, 1b and 1:4 molar ratio for 1c in DCM under refluxing condition. The complexes were characterized using different analytical techniques such as FT-IR, ESI(+) mass spectrometry, {sup 1}H and {sup 31}P{"1H} NMR spectrometry, conductivity measurements, and melting point determination. The synthesized complexes were found to exhibit good catalytic activity for the transfer hydrogenation of carbonyl compounds to corresponding alcohols with high conversion rate.

  7. A series of coordination polymers constructed from R-isophthalic acid (R=-SO3H, -NO2, and -OH) and N-donor ligands: Syntheses, structures and fluorescence properties

    Science.gov (United States)

    Zhou, Yong-Hong; Zhou, Xu-Wan; Zhou, Su-Rong; Tian, Yu-Peng; Wu, Jie-Ying

    2017-01-01

    Six novel Zn(II), Cd(II), and Cu(II) mixed-ligand coordination complexes, namely, [Zn2Na(sip)2(bpp)3(Hbpp)(H2O)2]·8H2O (1), [Cd3(sip)2(nbi)6(H2O)2]·7H2O (2), [Zn(sip)(nbi)2(H2O)]·Hnbi·3H2O (3), [Cd(hip)(nbi)2(H2O)]·nbi·5H2O (4), [Cd2(nip)2(nbi)2(H2O)2]·DMF (5), and [Cu(nip)(nbi)(H2O)2]·H2O (6) (H3sip=5-sulfoisophthalic acid, H2hip=5-hydroxylisophthalic acid, H2nip=5-nitroisophthalic acid, bpp=1,3-bis(4-pyridyl)propane, and nbi=6-nitrobenzimidazole) have been synthesized hydrothermally by the self-assembly of R-isophthalic acid (R=-SO3H, -NO2, and -OH) and N-donor ligands. Single crystal X-ray analyses reveal that two Zn(II) ions and one Na(I) ion of complex 1 are linked through O atoms to generate a 1D linear chain. Then the 2D supramolecular architectures are constructed via intermolecular interactions. In complex 2, the Cd1 ions are connected by bridging carboxyl groups from sip3- anions to form 1D double chain, which are further connected by Cd2 ions to afford 2D layer structure. The adjacent 2D layers are further linked via hydrogen-bonding interactions to give 3D supramolecular network. Compounds 3-5 show 1D chain structures, which are assembled into 2D or 3D supramolecular frameworks via weak interactions. In compound 6, the Cu(II) ions are bridged by the nip2- ligands to form 48-membered ring, which is assembled into 1Dchain via the π-π stacking interaction. In addition, the thermal stabilities and fluorescence properties of these compounds have also been studied.

  8. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

    Science.gov (United States)

    Savelyev, Igor; Blumin, Marina; Wang, Shiliang; Ruda, Harry E.

    2017-01-01

    Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications. PMID:28714903

  9. Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

    National Research Council Canada - National Science Library

    Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

    2005-01-01

    .... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

  10. Charge pumping in InAs nanowires by surface acoustic waves

    NARCIS (Netherlands)

    Roddaro, Stefano; Strambini, Elia; Romeo, Lorenzo; Piazza, Vincenzo; Nilsson, Kristian; Samuelson, Lars; Beltram, Fabio

    2010-01-01

    We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is

  11. Electron Spin Polarization and Detection in InAs Quantum Dots Through p-Shell Trions

    Science.gov (United States)

    2010-01-08

    optical control of spin states in quantum dots. II. EXPERIMENT The QD sample consists of 20 layers of InAs QDs, grown by molecular -beam epitaxy through...anisotropic 2D harmonic poten- tials. The electrons and holes are described by Fock- Darwin states harmonic oscillators with lateral sizes ax and ay in this

  12. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  13. Energy Band Structure Studies Of Zinc-Blende GaAs and InAs ...

    African Journals Online (AJOL)

    A self-consistent calculation of the structural and electronic properties of zinc blende GaAs and InAs has been carried out. The calculations were done using the full potential-linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT). The exchange-correlation energy used is the ...

  14. Positioning of self-assembled InAs quantum dots by focused ion beam implantation

    International Nuclear Information System (INIS)

    Mehta, M.

    2007-01-01

    Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

  15. Diameter dependence of the thermal conductivity of InAs nanowires

    NARCIS (Netherlands)

    Swinkels, M.Y.; van Delft, M.R.; Oliveira, D.S.; Cavalli, A.; Zardo, I.; van der Heijden, R.W.; Bakkers, E.P.A.M.

    2015-01-01

    The diameter dependence of the thermal conductivity of InAs nanowires in the range of 40–1500 nm has been measured. We demonstrate a reduction in thermal conductivity of 80% for 40 nm nanowires, opening the way for further design strategies for nanoscaled thermoelectric materials. Furthermore, we

  16. Study of electron transport in n-type InAs substrate by Monte Carlo ...

    African Journals Online (AJOL)

    It is therefore an iterative process made up from a whole coasting flights stopped by acoustics interactions, polar and non polar optics, piezoelectric, inter-valley, impurity, ionization and surface. By applying this method to the III-V material, case of InAs, we have described the behavior of the carriers from dynamic and ...

  17. High tunability and superluminescence in InAs mid-infrared light emitting diodes

    International Nuclear Information System (INIS)

    Sherstnev, V.V.; Krier, A.; Hill, G.

    2002-01-01

    We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

  18. Pathogenic and Ice-Nucleation Active (INA) Bacteria causing Dieback of Willows in Short Rotation Forestry

    Energy Technology Data Exchange (ETDEWEB)

    Nejad, Pajand

    2005-03-01

    To find out whether bacteria isolated from diseased plant parts can be the main causal agent for the dieback appearing in Salix energy forestry plantations in Sweden during the last few years, and if the joint effects of bacteria and frost injury are synergistic, extensive sampling of shoots from diseased Salix plants was performed. We performed several laboratory and greenhouse investigations and used evaluation techniques on the functions of the Ice-Nucleation Active (INA) bacteria. We carried out a comparison between spring and autumn bacterial communities isolated from within (endophytically) and surface (epiphytically) plant tissues of Salix viminalis. Seasonal variation of bacteria in willow clones with different levels of frost sensitivity and symptoms of bacterial damage was also investigated. We further focussed on possible effect of fertilisation and nutrient availability on the bacterial community in relation to plant dieback in Estonian willow plantations. The identification and detection of INA bacteria which cause damage in combination with frost to willow (Salix spp) plants in late fall, winter and spring was performed using BIOLOG MicroPlate, biochemical tests, selective INA primers and 16S rDNA analysis. To distinguish the character for differentiation between these bacteria morphologically and with respect to growing ability different culture media were used. We studied the temperature, at which ice nucleation occurred for individual bacteria, estimated the population of INA bacteria, effect of growth limiting factors, and evaluated the effect of chemical and physical agents for disruption and possible inhibition of INA among individual bacterial strains. The concentration of carbon, nitrogen and phosphorus on INA is discussed. We demonstrate that among the bacterial isolates recovered from the willow plantations, there were many that were capable of ice nucleation at temperatures between -2 and -10 deg C, many that were capable of inducing a

  19. Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2011-01-01

    Full Text Available Abstract Catalyst-free, vertical array of InAs nanowires (NWs are grown on Si (111 substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

  20. Self-assembled InAs quantum dots. Properties, modification and emission processes

    International Nuclear Information System (INIS)

    Schramm, A.

    2007-01-01

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  1. Interaction and Cooperative Nucleation of InAsSbP Quantum Dots and Pits on InAs(100 Substrate

    Directory of Open Access Journals (Sweden)

    Gambaryan Karen

    2009-01-01

    Full Text Available Abstract An example of InAsSbP quaternary quantum dots (QDs, pits and dots–pits cooperative structures’ growth on InAs(100 substrates by liquid phase epitaxy (LPE is reported. The interaction and surface morphology of the dots–pits combinations are investigated by the high-resolution scanning electron microscope. Bimodal growth mechanism for the both QDs and pits nucleation is observed. Cooperative structures consist of the QDs banded by pits, as well as the “large” pits banded by the quantum wires are detected. The composition of the islands and the pits edges is found to be quaternary, enriched by antimony and phosphorus, respectively. This repartition is caused by dissociation of the wetting layer, followed by migration (surface diffusion of the Sb and P atoms in opposite directions. The “small” QDs average density ranges from 0.8 to 2 × 109 cm−2, with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the “small” pits is equal to (6–10 × 109 cm−2 with dimensions of 5–40 nm in width and depth. Lifshits–Slezov-like distribution for the amount and surface density of both “small” QDs and pits versus their average diameter is experimentally detected. A displacement of the absorption edge toward the long wavelength region and enlargement toward the short wavelength region is detected by the Fourier transform infrared spectrometry.

  2. InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

    International Nuclear Information System (INIS)

    Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

    2007-01-01

    We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

  3. A family of entangled coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and auxiliary N-donor ligands: Luminescent sensing

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jun [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China); College of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong 643000 (China); Bai, Chao [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China); Hu, Huai-Ming, E-mail: ChemHu1@NWU.EDU.CN [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China); Yuan, Fei; Xue, Gang-Lin [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China)

    2017-05-15

    Eight Zn(II)-based coordination polymers, namely, [Zn{sub 2}L{sub 2}(2,2’-bipy)]{sub n}·nH{sub 2}O (1), [Zn{sub 2}L{sub 2}(phen)]{sub n}·nH{sub 2}O (2), [ZnL(phen)(H{sub 2}O)]{sub n} (3), [Zn{sub 3}L{sub 3}(4,4’-bipy)]{sub n} (4), [Zn{sub 2}L{sub 2}(4,4’-bipy){sub 2}]{sub n} [Zn{sub 2}L{sub 2}(H{sub 2}O){sub 2}]{sub n}·2nH{sub 2}O (5), [Zn{sub 4}L{sub 4}(bpp){sub 2}]{sub n} (6), [ZnL(bbi){sub 0.5}]{sub n} (7), [ZnL(bpz)]{sub n} (8) (H{sub 2}L=4,4’-([1,2-phenylenebis-(methylene)]bis(oxy))dibenzoic acid, 2,2’-bipy =2,2’-bipyridine, phen =1,10-phenanthroline, 4,4’-bpy=4,4’-bipyridine, bpp =1,3-bis(4-pyridyl)propane, bbi=1,4-bis(imidazol-1-yl)butane, bpz=3,3′,5,5′-tetramethyl-4,4′-bipyrazole), have been hydrothermally synthesized and structurally characterized. 1–8 display various coordination motifs with different entangled forms and conformations due to the effect of the assistant N-donor ligands. The photoluminescent properties of compounds 1–8 in solid state were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu{sup 2+} cations and CrO{sub 4}{sup 2-} anions, as well as detection ability for the different organic solvents and nitro explosives. These results indicated that it could be utilized as a multi-responsive luminescent sensor. Furthermore, compound 3 also shows good chemical resistance to both acidity and alkalinity solutions with pH ranging from 2 to 13. Thus, multi-photofunctionality and fluorescent response to pH have been combined in the 3, which is the first example in the Zn-based hybrid materials. - Graphical abstract: Eight new Zn(II)-based coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and different N-donor ligands have been hydrothermally synthesized through fixing the metal salts and the solvent systems. The photoluminescent properties of complexes 1−8 in solid state were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu{sup 2

  4. A family of entangled coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and auxiliary N-donor ligands: Luminescent sensing

    International Nuclear Information System (INIS)

    Wang, Jun; Bai, Chao; Hu, Huai-Ming; Yuan, Fei; Xue, Gang-Lin

    2017-01-01

    Eight Zn(II)-based coordination polymers, namely, [Zn 2 L 2 (2,2’-bipy)] n ·nH 2 O (1), [Zn 2 L 2 (phen)] n ·nH 2 O (2), [ZnL(phen)(H 2 O)] n (3), [Zn 3 L 3 (4,4’-bipy)] n (4), [Zn 2 L 2 (4,4’-bipy) 2 ] n [Zn 2 L 2 (H 2 O) 2 ] n ·2nH 2 O (5), [Zn 4 L 4 (bpp) 2 ] n (6), [ZnL(bbi) 0.5 ] n (7), [ZnL(bpz)] n (8) (H 2 L=4,4’-([1,2-phenylenebis-(methylene)]bis(oxy))dibenzoic acid, 2,2’-bipy =2,2’-bipyridine, phen =1,10-phenanthroline, 4,4’-bpy=4,4’-bipyridine, bpp =1,3-bis(4-pyridyl)propane, bbi=1,4-bis(imidazol-1-yl)butane, bpz=3,3′,5,5′-tetramethyl-4,4′-bipyrazole), have been hydrothermally synthesized and structurally characterized. 1–8 display various coordination motifs with different entangled forms and conformations due to the effect of the assistant N-donor ligands. The photoluminescent properties of compounds 1–8 in solid state were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu 2+ cations and CrO 4 2- anions, as well as detection ability for the different organic solvents and nitro explosives. These results indicated that it could be utilized as a multi-responsive luminescent sensor. Furthermore, compound 3 also shows good chemical resistance to both acidity and alkalinity solutions with pH ranging from 2 to 13. Thus, multi-photofunctionality and fluorescent response to pH have been combined in the 3, which is the first example in the Zn-based hybrid materials. - Graphical abstract: Eight new Zn(II)-based coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and different N-donor ligands have been hydrothermally synthesized through fixing the metal salts and the solvent systems. The photoluminescent properties of complexes 1−8 in solid state were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu 2+ cations and CrO 4 2- anions, as well as detection ability for the different organic solvents and nitro explosives, in which indicates it could be

  5. Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

    NARCIS (Netherlands)

    Offermans, P.; Koenraad, P.M.; Wolter, J.H.; Granados, D.; Garcia, J.M.; Fomin, V.; Gladilin, V.N.; Devreese, J.T.

    2005-01-01

    We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning

  6. A series of Cadmium(II) complexes with 2-substituted terephthalate building block and N-Donor co-ligands: Structural diversity and fluorescence properties

    Science.gov (United States)

    Ren, Yixia; Zhou, Shanhong; Wang, Zhixiang; Zhang, Meili; Wang, Jijiang; Cao, Jia

    2017-11-01

    Four new Cd(II) complexes have been prepared based on 1,2,4-trimellitic acid (H3tma) and monosodium 2-sulfoterephthalate (2-NaH2stp), formulated as [Cd2(Htma)2 (dpp)2(H2O)] (1), [Cd3 (tma)2 (2,4-bipy)4(H2O)2] (2), [Cd (2-Hstp) (2,2'-bipy)2]·2H2O (3) and [Cd (2-Hstp) (2,4-bipy) (H2O)2] (4) (dpp = dipyrido [3,2-a:2‧,3'-c] phenazine, 2,4-bipy = 2,4-bipyridine, 2,2'-bipy = 2,2'- bipyridine) by hydrothermal method. X-ray diffraction structural analyses show all these complexes crystallized in triclinic crystal system of Pī space group, but their structures are diverse. Complex 1 exhibits an infinite one-dimensional chain featuring the left- and right-handed stranded chains interweaved each other. For 2, the two-dimensional network is constructed by one-dimensional ladder-like chain linked by Cd2 ions. In complex 3, the cadmium ion is surrounded with one 2-Hstp2- anion and two 2,2'-bipy molecules. Complex 4 is also a discrete structure based on a metallic dimer unit. In all these complexes, the N-donor co-ligands take the important roles in the assembly of three-dimensional supramolecular structures. The fluorescence properties of complexes 1-4 could be assigned to the π - π* transition of organic ligands.

  7. On the processing of InAs and InSb photodiode applications

    Energy Technology Data Exchange (ETDEWEB)

    Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

    2008-07-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Etching and oxidation of InAs in planar inductively coupled plasma

    Energy Technology Data Exchange (ETDEWEB)

    Dultsev, F.N., E-mail: fdultsev@thermo.isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation)

    2009-10-15

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH{sub 4}/H{sub 2}/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  9. Etching and oxidation of InAs in planar inductively coupled plasma

    Science.gov (United States)

    Dultsev, F. N.; Kesler, V. G.

    2009-10-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  10. Etching and oxidation of InAs in planar inductively coupled plasma

    International Nuclear Information System (INIS)

    Dultsev, F.N.; Kesler, V.G.

    2009-01-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4 /H 2 /Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  11. Functional display of ice nucleation protein InaZ on the surface of bacterial ghosts.

    Science.gov (United States)

    Kassmannhuber, Johannes; Rauscher, Mascha; Schöner, Lea; Witte, Angela; Lubitz, Werner

    2017-09-03

    In a concept study the ability to induce heterogeneous ice formation by Bacterial Ghosts (BGs) from Escherichia coli carrying ice nucleation protein InaZ from Pseudomonas syringae in their outer membrane was investigated by a droplet-freezing assay of ultra-pure water. As determined by the median freezing temperature and cumulative ice nucleation spectra it could be demonstrated that both the living recombinant E. coli and their corresponding BGs functionally display InaZ on their surface. Under the production conditions chosen both samples belong to type II ice-nucleation particles inducing ice formation at a temperature range of between -5.6 °C and -6.7 °C, respectively. One advantage for the application of such BGs over their living recombinant mother bacteria is that they are non-living native cell envelopes retaining the biophysical properties of ice nucleation and do no longer represent genetically modified organisms (GMOs).

  12. On the processing of InAs and InSb photodiode applications

    International Nuclear Information System (INIS)

    Odendaal, V.; Botha, J.R.; Auret, F.D.

    2008-01-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Direct evidence of strain transfer for InAs island growth on compliant Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

    2015-04-13

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

  14. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  15. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

    Science.gov (United States)

    Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

    2018-05-01

    A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

  16. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    International Nuclear Information System (INIS)

    Hendra P, I. B.; Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-01-01

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%

  17. Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Mueller, P.

    1990-01-01

    Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates τ ρ -1 - ρne 2 /m * and τ x -1 2πkub(B)X/h/2π (where X is the Dingle temperature). The measured conduction electron density after irradiation and thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given. (author)

  18. Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

    Energy Technology Data Exchange (ETDEWEB)

    Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

    1995-12-31

    Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

  19. Arsenic flux dependence of island nucleation on InAs(001)

    International Nuclear Information System (INIS)

    Grosse, Frank; Barvosa-Carter, William; Zinck, Jenna; Wheeler, Matthew; Gyure, Mark F.

    2002-01-01

    The initial stages of InAs(001) homoepitaxial growth are investigated using a combination of kinetic Monte Carlo simulations based on ab initio density functional theory and scanning tunneling microscopy. In the two dimensional island nucleation mode investigated, the island number density is found to decrease with increasing As. This behavior is explained by a suppression of the effective In-adatom density leading to a reduction in island nucleation. The relevant microscopic processes responsible for this reduction are identified

  20. Reconstruction of an InAs nanowire using geometric and algebraic tomography

    International Nuclear Information System (INIS)

    Pennington, R S; Boothroyd, C B; König, S; Alpers, A; Dunin-Borkowski, R E

    2011-01-01

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality. When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize.

  1. Reconstruction of an InAs nanowire using geometric and algebraic tomography

    DEFF Research Database (Denmark)

    Pennington, Robert S.; König, S.; Alpers, A.

    2011-01-01

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

  2. Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

    Science.gov (United States)

    Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

    2005-06-01

    In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

  3. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Science.gov (United States)

    Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

    2017-07-01

    InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

  4. Alloy formation during InAs nanowire growth on GaAs(111)

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, Anton; Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. A possible way to obtain nanowires is the growth in molecular beam epitaxy on the (111)B oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of InAs nanowires grown on GaAs substrates covered by different oxide-layers using X-ray diffraction. In this contribution, we report on the structural investigation of InAs nanowires grown via an In droplet on GaAs substrates covered by different oxide layers using X-ray diffraction. Using a combination of symmetric and asymmetric X-ray diffraction, we observe that for growth on a defective oxide layer, alloy formation takes place and a large amount of InGaAs is formed, whereas for growth on an initially smooth oxide layer, only pure InAs is formed.

  5. The Crystal structure of InAs nanorods grown onto Si[111] substrate

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-07-01

    Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

  6. Geometric factors in the magnetoresistance of n-doped InAs epilayers

    KAUST Repository

    Sun, Jian

    2013-11-27

    We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

  7. GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

    International Nuclear Information System (INIS)

    Nevedomskii, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2009-01-01

    Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

  8. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  9. Atom optics

    International Nuclear Information System (INIS)

    Balykin, V. I.; Jhe, W.

    1999-01-01

    Atom optics, in analogy to neutron and electron optics, deals with the realization of as a traditional elements, such as lenes, mirrors, beam splitters and atom interferometers, as well as a new 'dissipative' elements such as a slower and a cooler, which have no analogy in an another types of optics. Atom optics made the development of atom interferometer with high sensitivity for measurement of acceleration and rotational possible. The practical interest in atom optics lies in the opportunities to create atom microprobe with atom-size resolution and minimum damage of investigated objects. (Cho, G. S.)

  10. Growth and characterization of InAs columnar quantum dots on GaAs substrate

    International Nuclear Information System (INIS)

    Li, L. H.; Patriarche, G.; Rossetti, M.; Fiore, A.

    2007-01-01

    The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nmx20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers

  11. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  12. Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

    NARCIS (Netherlands)

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Fiore, A.; Dagli, N.

    2007-01-01

    In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss

  13. Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaowen [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China); Wang, Qi; Li, Senlin; Chen, C.Q. [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Sun, Liaoxin; Luo, X.D.; Zhang, Bo [Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China)

    2015-04-01

    In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing the photoluminescence spectra of InAs (QDs)/GaInAsP/InP at different temperatures and excitation powers, the origin of each emission is verified. And it is found that, with the temperature increasing, the emission intensity of GaInAsP wetting layers decreases firstly (T < 150 K) and then increases from 160 K to room temperature. By analyzing the experimental results of three samples with different QDs' sizes, a competitive emission between InAs QDs and GaInAsP wetting layers is confirmed. (orig.)

  14. Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots

    International Nuclear Information System (INIS)

    Khatsevich, S.; Rich, D.H.; Kim, Eui-Tae; Madhukar, A.

    2005-01-01

    We have examined state filling and thermal activation of carriers in buried InAs self-assembled quantum dots (SAQDs) with excitation-dependent cathodoluminescence (CL) imaging and spectroscopy. The InAs SAQDs were formed during molecular-beam epitaxial growth of InAs on undoped planar GaAs (001). The intensities of the ground- and excited-state transitions were analyzed as a function of temperature and excitation density to study the thermal activation and reemission of carriers. The thermal activation energies associated with the thermal quenching of the luminescence were measured for ground- and excited-state transitions of the SAQDs, as a function of excitation density. By comparing these activation energies with the ground- and excited-state transition energies, we have considered various processes that describe the reemission of carriers. Thermal quenching of the intensity of the QD ground- and first excited-state transitions at low excitations in the ∼230-300-K temperature range is attributed to dissociation of excitons from the QD states into the InAs wetting layer. At high excitations, much lower activation energies of the ground and excited states are obtained, suggesting that thermal reemission of single holes from QD states into the GaAs matrix is responsible for the observed temperature dependence of the QD luminescence in the ∼230-300-K temperature range. The dependence of the CL intensity of the ground-and first excited-state transition on excitation density was shown to be linear at all temperatures at low-excitation density. This result can be understood by considering that carriers escape and are recaptured as excitons or correlated electron-hole pairs. At sufficiently high excitations, state-filling and spatial smearing effects are observed together with a sublinear dependence of the CL intensity on excitation. Successive filling of the ground and excited states in adjacent groups of QDs that possess different size distributions is assumed to

  15. Nonlinear absorption and receptivity of the third order in InAs infrared region

    International Nuclear Information System (INIS)

    Musayev, M.A.

    2005-01-01

    Nonlinear absorption and receptivity of the third order and coefficient nonlinear absorption in InAs n-type with different degree of alloying was measured. Obtained score considerably exceed sense, calculated on the basis of the models describing nonlinear receptivity of electrons, situated in the nonparabolic area of conductivity. It was shown that, observable deviations withdraw; if in the calculation apply energy dissipation of electrons. Growth of the efficiency under four-wave interaction in low-energy-gap semiconductors confines nonlinear absorption of interacting waves

  16. Influence of nitrogen on the growth and the properties of InAs quantum dots

    International Nuclear Information System (INIS)

    Schumann, O.

    2004-01-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  17. The third order nonlinear susceptibility of InAs at infrared region

    International Nuclear Information System (INIS)

    Musayev, M.A.

    2008-01-01

    Nonlinear susceptibilities of the third order and coefficient of nonlinear absorption in InAs n-type with a different degree of a doping have been measured. The values of the third order nonlinear susceptibilities have derived from these measurements essentially exceed the values calculated on the basis of model featuring nonlinear susceptibility of electrons, being in conduction-band nonparabolicity. It has been shown that the observable discrepancy has been eliminated, if in calculation a dissipation of energy of electrons has been considered. Growth of efficiency at four-wave mixingin narrow-gap semiconductors has been restricted to nonlinear absorption of interacting waves

  18. Jačina sveze adhezijskih materijala na tvrda zubna tkiva

    OpenAIRE

    Žagar, Polona

    2017-01-01

    Adhezija se odnosi na povezivanje atoma i molekula na kontaktnim površinama različitih materijala. Adhezijske sustave možemo podjeliti prema interakciji sa tvrdim zubnim tkivima na jetkajuće ispirajuće, samojetkajuće i staklenoionomerne sustave. Univerzalni adhezivi su najnovija generacija adheziva na tržištu. Mogu se koristiti kao jetkajući ispirajući i samojetkajući sustavi. U ovom radu je ispitivana jačina adhezijske sveze s caklinom jetkajuće ispirajućim i univerzalnim adheziv...

  19. ODNOS ZAPOSLENIH V VRTCU DO ZDRAVEGA NAČINA ŽIVLJENJA

    OpenAIRE

    Cesarec, Anja

    2009-01-01

    Diplomsko delo predstavlja temo odnos zaposlenih v vrtcu do zdravega načina življenja. Predstavili smo zdravje, dejavnike, ki vplivajo na stopnjo zdravja in dejavnike, ki vplivajo na življenjski slog, kot so kajenje tobaka, način prehranjevanja, telesno aktivnost, uživanje nedovoljenih drog in alkohola ter stres. Posebno poglavje pa je namenjeno skrbi za zdrav način življenja. V empiričnem delu so predstavljeni rezultati raziskave, narejene v vrtcu Rogaška Slatina, enota Izvir. V raziskavo, k...

  20. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    International Nuclear Information System (INIS)

    Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F.

    2014-01-01

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  1. Spin-lattice relaxation times and knight shift in InSb and InAs

    International Nuclear Information System (INIS)

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  2. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

    DEFF Research Database (Denmark)

    Krizek, Filip; Kanne, Thomas; Razmadze, Davydas

    2017-01-01

    . Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show......Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism...

  3. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-11-07

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  4. Atom-by-atom assembly

    International Nuclear Information System (INIS)

    Hla, Saw Wai

    2014-01-01

    Atomic manipulation using a scanning tunneling microscope (STM) tip enables the construction of quantum structures on an atom-by-atom basis, as well as the investigation of the electronic and dynamical properties of individual atoms on a one-atom-at-a-time basis. An STM is not only an instrument that is used to ‘see’ individual atoms by means of imaging, but is also a tool that is used to ‘touch’ and ‘take’ the atoms, or to ‘hear’ their movements. Therefore, the STM can be considered as the ‘eyes’, ‘hands’ and ‘ears’ of the scientists, connecting our macroscopic world to the exciting atomic world. In this article, various STM atom manipulation schemes and their example applications are described. The future directions of atomic level assembly on surfaces using scanning probe tips are also discussed. (review article)

  5. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    KAUST Repository

    Rota, Michele B.

    2017-07-12

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

  6. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  7. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  8. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    International Nuclear Information System (INIS)

    Eassa, N.; Murape, D.M.; Betz, R.; Neethling, J.H.; Venter, A.; Botha, J.R.

    2012-01-01

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H 2 O, Br–methanol and I–ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  9. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

    Science.gov (United States)

    Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

    2016-05-01

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  10. X-ray characterization Si-doped InAs nanowires grown on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)

    2011-07-01

    Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.

  11. Formation of anodic layers on InAs (111)III. Study of the chemical composition

    Energy Technology Data Exchange (ETDEWEB)

    Valisheva, N. A., E-mail: valisheva@thermo.isp.nsc.ru; Tereshchenko, O. E. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Prosvirin, I. P.; Kalinkin, A. V. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation); Goljashov, V. A. [Novosibirsk State University (Russian Federation); Levtzova, T. A. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Bukhtiyarov, V. I. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2012-04-15

    The chemical composition of {approx}20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH{sub 4}F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH{sub 4}F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF{sub x}/InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O{sup 2-} and/or OH{sup -} groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.

  12. Transport and performance of a gate all around InAs nanowire transistor

    International Nuclear Information System (INIS)

    Alam, Khairul

    2009-01-01

    The transport physics and performance metrics of a gate all around an InAs nanowire transistor are studied using a three-dimensional quantum simulation. The transistor action of an InAs nanowire transistor occurs by modulating the transmission coefficient of the device. This action is different from a conventional metal-oxide-semiconductor field effect transistor, where the transistor action occurs by modulating the charge in the channel. The device has 82% tunneling current in the off-state and 81% thermal current in the on-state. The two current components become equal at a gate bias at which an approximate source-channel flat-band condition is achieved. Prior to this gate bias, the tunneling current dominates and the thermal current dominates beyond it. The device has an on/off current ratio of 7.84 × 10 5 and an inverse subthreshold slope of 63 mV dec −1 . The transistor operates in the quantum capacitance limit with a normalized transconductance value of 14.43 mS µm −1 , an intrinsic switching delay of 90.1675 fs, and an intrinsic unity current gain frequency of 6.8697 THz

  13. Atomic polarizabilities

    International Nuclear Information System (INIS)

    Safronova, M. S.; Mitroy, J.; Clark, Charles W.; Kozlov, M. G.

    2015-01-01

    The atomic dipole polarizability governs the first-order response of an atom to an applied electric field. Atomic polarization phenomena impinge upon a number of areas and processes in physics and have been the subject of considerable interest and heightened importance in recent years. In this paper, we will summarize some of the recent applications of atomic polarizability studies. A summary of results for polarizabilities of noble gases, monovalent, and divalent atoms is given. The development of the CI+all-order method that combines configuration interaction and linearized coupled-cluster approaches is discussed

  14. Atomic polarizabilities

    Energy Technology Data Exchange (ETDEWEB)

    Safronova, M. S. [Department of Physics and Astronomy, University of Delaware, Newark, DE 19716 (United States); Mitroy, J. [School of Engineering, Charles Darwin University, Darwin NT 0909 (Australia); Clark, Charles W. [Joint Quantum Institute, National Institute of Standards and Technology and the University of Maryland, Gaithersburg, Maryland 20899-8410 (United States); Kozlov, M. G. [Petersburg Nuclear Physics Institute, Gatchina 188300 (Russian Federation)

    2015-01-22

    The atomic dipole polarizability governs the first-order response of an atom to an applied electric field. Atomic polarization phenomena impinge upon a number of areas and processes in physics and have been the subject of considerable interest and heightened importance in recent years. In this paper, we will summarize some of the recent applications of atomic polarizability studies. A summary of results for polarizabilities of noble gases, monovalent, and divalent atoms is given. The development of the CI+all-order method that combines configuration interaction and linearized coupled-cluster approaches is discussed.

  15. Atomic physics

    CERN Document Server

    Foot, Christopher J

    2007-01-01

    This text will thoroughly update the existing literature on atomic physics. Intended to accompany an advanced undergraduate course in atomic physics, the book will lead the students up to the latest advances and the applications to Bose-Einstein Condensation of atoms, matter-wave inter-ferometry and quantum computing with trapped ions. The elementary atomic physics covered in the early chapters should be accessible to undergraduates when they are first introduced to the subject. To complement. the usual quantum mechanical treatment of atomic structure the book strongly emphasizes the experimen

  16. Atomic physics

    International Nuclear Information System (INIS)

    Armbruster, P.; Beyer, H.; Bosch, F.; Dohmann, H.D.; Kozhuharov, C.; Liesen, D.; Mann, R.; Mokler, P.H.

    1984-01-01

    The heavy ion accelerator UNILAC is well suited to experiments in the field of atomic physics because, with the aid of high-energy heavy ions atoms can be produced in exotic states - that is, heavy atoms with only a few electrons. Also, in close collisions of heavy ions (atomic number Z 1 ) and heavy target atoms (Z 2 ) short-lived quasi-atomic 'superheavy' systems will be formed - huge 'atoms', where the inner electrons are bound in the field of the combined charge Z 1 + Z 2 , which exceeds by far the charge of the known elements (Z <= 109). Those exotic or transient superheavy atoms delivered from the heavy ion accelerator make it possible to study for the first time in a terrestrial laboratory exotic, but fundamental, processes, which occur only inside stars. Some of the basic research carried out with the UNILAC is discussed. This includes investigation of highly charged heavy atoms with the beam-foil method, the spectroscopy of highly charged slow-recoil ions, atomic collision studies with highly ionised, decelerated ions and investigations of super-heavy quasi-atoms. (U.K.)

  17. Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

    DEFF Research Database (Denmark)

    Saldaña, J. C. Estrada; Žitko, R.; Cleuziou, J. P.

    2018-01-01

    We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe...

  18. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    Bull, D.J.

    1977-01-01

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

  19. Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

    International Nuclear Information System (INIS)

    Espinola, J L Casas; Dybic, M; Ostapenko, S; Torchynska, T V; Polupan, G

    2007-01-01

    Ground and multi excited state photoluminescence, as well as its temperature dependence, in InAs quantum dots embedded in symmetric In x Ga 1-x As/GaAs (x = 0.15) quantum wells (DWELL) have been investigated. The solution of the set of rate equations for exciton dynamics (relaxation into QWs or QDs and thermal escape) solved by us earlier is used for analysis the variety of thermal activation energies of photoluminescence thermal quenching for ground and multi excited states of InAs QDs. The obtained solutions were used at the discussion of the variety of activation energies of PL thermal quenching in InAs QDs. It is revealed three different regimes of thermally activated quenching of the QD PL intensity. These three regimes were attributed to thermal escape of excitons: i) from the high energy excited states of InAs QDs into the WL with follows exciton re-localization; ii) from the In x Ga 1-x As QWs into the GaAs barrier and iii) from the WL into the GaAs barrier with their subsequent nonradiative recombination in GaAs barrier

  20. 20 CFR 668.700 - What process must an INA grantee use to plan its employment and training services?

    Science.gov (United States)

    2010-04-01

    ... it uses to plan other activities and services. (b) However, in the process of preparing its Two Year... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What process must an INA grantee use to plan its employment and training services? 668.700 Section 668.700 Employees' Benefits EMPLOYMENT AND...

  1. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    KAUST Repository

    Rota, Michele B.; Ameruddin, Amira S.; Wong-Leung, Jennifer; Belabbes, Abderrezak; Gao, Qiang; Miriametro, Antonio; Mura, Francesco; Tan, Hark Hoe; Polimeni, Antonio; Bechstedt, Friedhelm; Jagadish, Chennupati; Capizzi, Mario

    2017-01-01

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ

  2. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    NARCIS (Netherlands)

    Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

  3. Ultracold atoms on atom chips

    DEFF Research Database (Denmark)

    Krüger, Peter; Hofferberth, S.; Haller, E.

    2005-01-01

    Miniaturized potentials near the surface of atom chips can be used as flexible and versatile tools for the manipulation of ultracold atoms on a microscale. The full scope of possibilities is only accessible if atom-surface distances can be reduced to microns. We discuss experiments in this regime...

  4. Complexation of trivalent actinides and lanthanides with hydrophilic N-donor ligands for Am(III)/Cm(III) and An(III)/Ln(III) separation; Komplexierung von trivalenten Actiniden und Lanthaniden mit hydrophilen N-Donorliganden zur Am(III)/Cm(III)- bzw. An(III)/Ln(III)-Trennung

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Christoph

    2017-07-24

    The implementation of actinide recycling processes is considered in several countries, aiming at the reduction of long-term radiotoxicity and heat load of used nuclear fuel. This requires the separation of the actinides from the fission and corrosion products. The separation of the trivalent actinides (An(III)) Am(III) and Cm(III), however, is complicated by the presence of the chemically similar fission lanthanides (Ln(III)). Hydrophilic N-donor ligands are employed as An(III) or Am(III) selective complexing agents in solvent extraction to strip An(III) or Am(III) from an organic phase loaded with An(III) and Ln(III). Though they exhibit excellent selectivity, the complexation chemistry of these ligands and the complexes formed during solvent extraction are not sufficiently characterized. In the present thesis the complexation of An(III) and Ln(III) with hydrophilic N-donor ligands is studied by time resolved laser fluorescence spectroscopy (TRLFS), UV/Vis, vibronic sideband spectroscopy and solvent extraction. TRLFS studies on the complexation of Cm(III) and Eu(III) with the Am(III) selective complexing agent SO{sub 3}-Ph-BTBP (tetrasodium 3,3{sup '},3'',3{sup '''}-([2,2{sup '}-bipyridine]-6,6{sup '}-diylbis(1,2,4-triazine-3,5,6-triyl)) tetrabenzenesulfonate) revealed the formation of [M(SO{sub 3}-Ph-BTBP){sub n}]{sup (4n-3)-} complexes (M = Cm(III), Eu(III); n = 1, 2). The conditional stability constants were determined in different media yielding two orders of magnitude larger β{sub 2}-values for the Cm(III) complexes, independently from the applied medium. A strong impact of ionic strength on the stability and stoichiometry of the formed complexes was identified, resulting from the stabilization of the pentaanionic [M(SO{sub 3}-Ph-BTBP){sub 2}]{sup 5-} complex with increasing ionic strength. Thermodynamic studies of Cm(III)-SO{sub 3}-Ph-BTBP complexation showed that the proton concentration of the applied medium impacts

  5. Ubiquitous atom

    International Nuclear Information System (INIS)

    Spruch, G.M.; Spruch, L.

    1974-01-01

    The fundamentals of modern physics, including the basic physics and chemistry of the atom, elementary particles, cosmology, periodicity, and recent advances, are surveyed. The biology and chemistry of the life process is discussed to provide a background for considering the effects of atomic particles on living things. The uses of atomic power in space travel, merchant shipping, food preservation, desalination, and nuclear clocks are explored. (Pollut. Abstr.)

  6. ISTRAŽIVANJE ZAGAĐENOSTI MESA, RADNIH POVRŠINA I PRIBORA BAKTERIJAMA RODA PROTEUS

    OpenAIRE

    Hadžiosmanović, Mirza; Živković, Josip; Trešćec, Aida

    1992-01-01

    Istraživan je stupanj zagađenja sirovina i radnih površina tijekom proizvodnje mesnih prerađevina bakterijama roda Proteus. Rezultati su pokazali da je meso peradi zagađeno vrstama roda Proteus u količini od 8,8%, svježe goveđe meso 7,8 % a polutrajne i obarene kobasice neposredno nakon proizvoodnje u količini od 2,8 %. Rezultati pretraga brisova s proizvodnih linija pokazuju da je pripadnika roda Proteus najviše u kobasičarnici (14,6 %), na liniji prerade svinja (11,8 %), goveda (10,9 %), a ...

  7. Surface roughness induced electron mobility degradation in InAs nanowires

    International Nuclear Information System (INIS)

    Wang Fengyun; Yip, Sen Po; Han, Ning; Fok, KitWa; Lin, Hao; Hou, Jared J; Dong, Guofa; Hung, Tak Fu; Chan, K S; Ho, Johnny C

    2013-01-01

    In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm 2 V −1 s −1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance. (paper)

  8. Mieloencefalite protozoária eqüina (Relato de caso.

    Directory of Open Access Journals (Sweden)

    R. C. Gonçalves

    2005-03-01

    Full Text Available RESUMO :O objetivo deste trabalho foi relatar um caso de mieloencefalite protozoária eqüina no Estado de São Paulo, Brasil. O diagnóstico se baseou nos sinais clínicos, no resultado positivo para anticorpos contra Sarcocystis neurona no soro e no líquor pela técnica de Western blot. Palavras chave: Mieloencefalite, Sarcocystis neurona, eqüinos. SUMMARY: The purpose of this work was to present a case of equine protozoal myeloencephalitis (EPM in the State of São Paulo, Brazil. The diagnosis was based on the clinical sings, the positive results of the serum and cerebrospinal fluid analysis (Western blot for antibodies against Sarcocystis neurona. Keywords: Myeloencephalitis, Sarcocystis neurona,

  9. Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Suparna; Aggarwal, R.; Kumari Gupta, Vandna; Ingale, Alka [Laser Physics Application Section, Raja Ramanna Centre for Advanced Technology, Indore 452013, MP (India)

    2014-07-07

    We report the study of time evolution of chemical changes on the surface of an InAs nanowire (NW) on laser irradiation in different power density regime, using Raman spectroscopy for a time span of 8–16 min. Mixture of metastable oxides like InAsO{sub 4,} As{sub 2}O{sub 3} are formed upon oxidation, which are reflected as sharp Raman peaks at ∼240–254 and 180–200 cm{sup −1}. Evidence of removal of arsenic layer by layer is also observed at higher power density. Position controlled laser induced chemical modification on a nanometer scale, without changing the core of the NW, can be useful for NW based device fabrication.

  10. Isolation, Fractionation and Characterization of Catalase from Neurospora crassa (InaCC F226)

    Science.gov (United States)

    Suryani; Ambarsari, L.; Lindawati, E.

    2017-03-01

    Catalase from Indigenous isolate Neurospora crassa InaCC F226 has been isolated, fractionated and characterized. Production of catalase by Neurospora crassa was done by using PDA medium (Potato Dextrosa Agar) and fractionated with ammonium sulphate with 20-80% saturation. Fraction 60% was optimum saturation of ammonium sulphate and had highest specific activity 3339.82 U/mg with purity 6.09 times, total protein 0.920 mg and yield 88.57%. The optimum pH and temperature for catalase activity were at 40°C and pH 7.0, respectively. The metal ions that stimulated catalase activity acted were Ca2+, Mn2+ and Zn2+, and inhibitors were EDTA, Mg2+ and Cu2+. Based on Km and Vmax values were 0.2384 mM and 13.3156 s/mM.

  11. Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption

    International Nuclear Information System (INIS)

    Kim, Jungsub; Yang, Changjae; Sim, Uk; Lee, Jaeyel; Yoon, Euijoon; Lee, Youngsoo

    2009-01-01

    We investigated the morphological and optical properties of InAs quantum dots (QDs) grown by using periodic arsine interruption (PAI) and compared them with QDs grown conventionally. In the conventional growth, the formation of large islands was observed, which suppresses the nucleation and growth of QDs. Furthermore, the growth of capping layers was significantly degraded by these large islands. On the other hand, in the PAI growth, the formation of large islands was completely suppressed, resulting in the increase of the density and aspect ratio of QDs and the uniform growth of capping layers. As a result of photoluminescence (PL) measurements, we found that the emission efficiency was enhanced and the full-width-half-maximum was reduced to 32 meV. The temperature dependence of these optical properties also revealed the enhancement of the uniformity of QDs grown by the PAI method.

  12. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

    Science.gov (United States)

    Vigneau, Florian; Zeng, Zaiping; Escoffier, Walter; Caroff, Philippe; Leturcq, Renaud; Niquet, Yann-Michel; Raquet, Bertrand; Goiran, Michel

    2018-03-01

    The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

  13. Atomic physics

    International Nuclear Information System (INIS)

    Anon.

    1976-01-01

    Research activities in atomic physics at Lawrence Berkeley Laboratory during 1976 are described. Topics covered include: experiments on stored ions; test for parity violation in neutral weak currents; energy conservation and astrophysics; atomic absorption spectroscopy, atomic and molecular detectors; theoretical studies of quantum electrodynamics and high-z ions; atomic beam magnetic resonance; radiative decay from the 2 3 Po, 2 levels of helium-like argon; quenching of the metastable 2S/sub 1/2/ state of hydrogen-like argon in an external electric field; and lifetime of the 2 3 Po level of helium-like krypton

  14. Atomic physics

    CERN Document Server

    Born, Max

    1969-01-01

    The Nobel Laureate's brilliant exposition of the kinetic theory of gases, elementary particles, the nuclear atom, wave-corpuscles, atomic structure and spectral lines, electron spin and Pauli's principle, quantum statistics, molecular structure and nuclear physics. Over 40 appendices, a bibliography, numerous figures and graphs.

  15. Early Atomism

    Indian Academy of Sciences (India)

    https://www.ias.ac.in/article/fulltext/reso/015/10/0905-0925. Keywords. Atomic theory; Avogadro's hypothesis; atomic weights; periodic table; valence; molecular weights; molecular formula; isomerism. Author Affiliations. S Ramasesha1. Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, ...

  16. Atom spectroscopy

    International Nuclear Information System (INIS)

    Kodling, K.

    1981-01-01

    Experiments on atom photoabsorption spectroscopy using synchrotron radiation in the 10-1000 eV range are reviewed. Properties of the necessary synchrotron radiation and the experiment on absorption spectroscopy are briefly described. Comparison with other spectroscopy methods is conducted. Some data on measuring photoabsorption, photoelectron emission and atom mass spectra are presented [ru

  17. Exotic atoms

    International Nuclear Information System (INIS)

    Horvath, D.; Lambrecht, R.M.

    1984-01-01

    This bibliography on exotic atoms covers the years 1939 till 1982. The annual entries are headed by an introduction describing the state of affairs of the branch of science and listing the main applications in quantum electrodynamics, particle physics, nuclear physics, atomic physics, chemical physics and biological sciences. The bibliography includes an author index and a subject index. (Auth.)

  18. A Brief History of INA and ICOH SCNP: International Neurotoxicology Association and International Congress on Occupational Health Scientific Committee on Neurotoxicology and Psychophysiology

    Science.gov (United States)

    Two international scientific societies dedicated to research in neurotoxicology and neurobehavioral toxicology are the International Neurotoxicology Association (INA) and the International Congress on Occupational Health International Symposium on Neurobehavioral Methods and Effe...

  19. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  20. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

    International Nuclear Information System (INIS)

    Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

    2006-01-01

    Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

  1. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-01-01

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

  2. Atomic fusion, Gerrard atomic fusion

    International Nuclear Information System (INIS)

    Gerrard, T.H.

    1980-01-01

    In the approach to atomic fusion described here the heat produced in a fusion reaction, which is induced in a chamber by the interaction of laser beams and U.H.F. electromagnetic beams with atom streams, is transferred to a heat exchanger for electricity generation by a coolant flowing through a jacket surrounding the chamber. (U.K.)

  3. Superradiators created atom by atom

    Science.gov (United States)

    Meschede, Dieter

    2018-02-01

    High radiation rates are usually associated with macroscopic lasers. Laser radiation is “coherent”—its amplitude and phase are well-defined—but its generation requires energy inputs to overcome loss. Excited atoms spontaneously emit in a random and incoherent fashion, and for N such atoms, the emission rate simply increases as N. However, if these atoms are in close proximity and coherently coupled by a radiation field, this microscopic ensemble acts as a single emitter whose emission rate increases as N2 and becomes “superradiant,” to use Dicke's terminology (1). On page 662 of this issue, Kim et al. (2) show the buildup of coherent light fields through collective emission from atomic radiators injected one by one into a resonator field. There is only one atom ever in the cavity, but the emission is still collective and superradiant. These results suggest another route toward thresholdless lasing.

  4. Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light.

    Science.gov (United States)

    Rivas, David; Muñoz-Matutano, Guillermo; Canet-Ferrer, Josep; García-Calzada, Raúl; Trevisi, Giovanna; Seravalli, Luca; Frigeri, Paola; Martínez-Pastor, Juan P

    2014-02-12

    In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

  5. Increasing the quantum efficiency of GaAs solar cells by embedding InAs quantum dots

    Science.gov (United States)

    Salii, R. A.; Mintairov, S. A.; Nadtochiy, A. M.; Payusov, A. S.; Brunkov, P. N.; Shvarts, M. Z.; Kalyuzhnyy, N. A.

    2016-11-01

    Development of Metalorganic Vapor Phase Epitaxy (MOVPE) technology of InAs quantum dots (QDs) in GaAs for photovoltaic applications is presented. The growth peculiarities in InAs-GaAs lattice-mismatched system were considered. The photoluminescence (PL) intensity dependences on different growth parameters were obtained. The multimodal distribution of QDs by sizes was found using AFM and PL methods. GaAs solar cell nanoheterostructures with imbedded QD arrays were designed and obtained. Ones have been demonstrated a significant increase of quantum efficiency and photogenerated current of QD solar cells due to photo effect in InAs QD array (0.59 mA/cm2 for AM1.5D and 82 mA/cm2 for AM0).

  6. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    International Nuclear Information System (INIS)

    Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

    2006-01-01

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

  7. Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires

    International Nuclear Information System (INIS)

    Lindgren, David; Kawaguchi, Kenichi; Heurlin, Magnus; Borgström, Magnus T; Pistol, Mats-Erik; Samuelson, Lars; Gustafsson, Anders

    2013-01-01

    Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core–shell InP–InAs wurtzite nanowires grown using metal–organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1–12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging. (paper)

  8. Surface structure investigations using noncontact atomic force microscopy

    International Nuclear Information System (INIS)

    Kolodziej, J.J.; Such, B.; Goryl, M.; Krok, F.; Piatkowski, P.; Szymonski, M.

    2006-01-01

    Surfaces of several A III B V compound semiconductors (InSb, GaAs, InP, InAs) of the (0 0 1) orientation have been studied with noncontact atomic force microscopy (NC-AFM). Obtained atomically resolved patterns have been compared with structural models available in the literature. It is shown that NC-AFM is an efficient tool for imaging complex surface structures in real space. It is also demonstrated that the recent structural models of III-V compound surfaces provide a sound base for interpretation of majority of features present in recorded patterns. However, there are also many new findings revealed by the NC-AFM method that is still new experimental technique in the context of surface structure determination

  9. The presence of INA proteins on the surface of single cells of Pseudomonas syringae R10.79 isolated from rain

    Science.gov (United States)

    Šantl-Temkiv, Tina; Ling, Meilee; Holm, Stine; Finster, Kai; Boesen, Thomas

    2016-04-01

    One of the important open questions in atmospheric ice nucleation is the impact of bioaerosols on the ice content of mix phase clouds (DeMott and Prenni 2010). Biogenic ice nuclei have a unique capacity of facilitating ice formation at temperatures between -1 and -10 °C. The model biogenic ice nuclei are produced by a few species of plant-surface bacteria, such as Pseudomonas syringae, that are commonly transported through the atmosphere. These bacterial species have highly specialized proteins, the so-called ice nucleation active (INA) proteins, which are exposed at the outer membrane surface of the cell where they promote ice particle formation. The mechanisms behind the onset of INA protein synthesis in single bacterial cells are not well understood. We performed a laboratory study in order to (i) investigate the presence of INA proteins on single bacterial cells and (ii) understand the conditions that induce INA protein production. We previously isolated an INA-positive strain of Pseudomonas syringae from rain samples collected in Denmark. Bacterial cells initiated ice nucleation activity at temperatures ≤-2°C and the cell fragments at temperatures ≤-8°C (Šantl-Temkiv et al 2015). We determined the amino-acid sequence of the INA protein and used the sequence to produce custom-made antibodies (GenScript, Germany). These antibodies were used to specifically stain and visualize the INA protein on the surfaces of single cells, which can then be quantified by a technique called flow cytometry. The synthesis of INA proteins by individual cells was followed during a batch growth experiment. An unusually high proportion of cells that were adapting to the new conditions prior to growth produced INA proteins (~4.4% of all cells). A smaller fraction of actively growing cells was carrying INA proteins (~1.2 % of all cells). The cells that stopped growing due to unfavorable conditions had the lowest fraction of cells carrying INA proteins (~0.5 % of all cells). To

  10. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  11. Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

    Directory of Open Access Journals (Sweden)

    Maronchuk I. E.

    2008-12-01

    Full Text Available Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

  12. Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

    Science.gov (United States)

    Colocci, M.; Vinattieri, A.; Lippi, L.; Bogani, F.; Rosa-Clot, M.; Taddei, S.; Bosacchi, A.; Franchi, S.; Frigeri, P.

    1999-01-01

    Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is not present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering.

  13. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    Science.gov (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  14. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  15. Atomic interferometry

    International Nuclear Information System (INIS)

    Baudon, J.; Robert, J.

    2004-01-01

    Since the theoretical works of L. De Broglie (1924) and the famous experiment of Davisson and Germer (1927), we know that a wave is linked with any particle of mass m by the relation λ = h/(mv), where λ is the wavelength, v the particle velocity and h is the Planck constant. The basic principle of the interferometry of any material particle, atom, molecule or aggregate is simple: using a simple incident wave, several mutually consistent waves (with well-defined relative phases) are generated and controllable phase-shifts are introduced between them in order to generate a wave which is the sum of the previous waves. An interference figure is obtained which consists in a succession of dark and bright fringes. The atomic interferometry is based on the same principle but involves different techniques, different wave equations, but also different beams, sources and correlations which are described in this book. Because of the small possible wavelengths and the wide range of possible atomic interactions, atomic interferometers can be used in many domains from the sub-micron lithography to the construction of sensors like: inertial sensors, gravity-meters, accelerometers, gyro-meters etc. The first chapter is a preliminary study of the space and time diffraction of atoms. The next chapters is devoted to the description of slit, light separation and polarization interferometers, and the last chapter treats of the properties of Bose-Einstein condensates which are interesting in atomic interferometry. (J.S.)

  16. Thermodynamic study on the complexation of Trivalent actinide and lanthanide cation by N-donor ligands in homogeneous conditions; Etude thermodynamique de la complexation des ions actinide (III) et lanthanide (III) par des ligands polyazotes en milieu homogene

    Energy Technology Data Exchange (ETDEWEB)

    Miguirditchian, M

    2004-07-01

    Polydentate N-donor ligands, alone or combined with a synergic acid, may selectively extract minor actinides(III) from lanthanide(III) ions, allowing to develop separation processes of long-live radioelements. The aim of the researches carried out during this thesis was to better understand the chemical mechanisms of the complexation of f-elements by Adptz, a tridentate N-donor ligand, in homogeneous conditions. A thermodynamic approach was retained in order to estimate, from an energetic point of view, the influence of the different contributions to the reaction, and to acquire a complete set of thermodynamic data on this reaction. First, the influence of the nature of the cation on the thermodynamics was considered. The stability constants of the 1/1 complexes were systematically determined by UV-visible spectrophotometry for every lanthanide ion (except promethium) and for yttrium in a mixed solvent methanol/water in volume proportions 75/25%. The thermodynamic parameters ({delta}H{sup 0} {delta}{sup S}) of complexation were estimated by the van't Hoff method and by micro-calorimetry. The trends of the variations across the lanthanide series are compared with similar studies. The same methods were applied to the study of three actinide(III) cations: plutonium, americium and curium. The comparison of these values with those obtained for the lanthanides highlights the increase of stability of these complexes by a factor of 20 in favor of the actinide cations. This gap is explained by a more exothermic reaction and is associated, in the data interpretation, to a higher covalency of the actinide(III)-nitrogen bond. Then, the influence of the change of solvent composition on the thermodynamic of complexation was studied. The thermodynamic parameters of the complexation of europium(III) by Adptz were determined for several fractions of methanol. The stability of the complex formed increases with the percentage of methanol in the mixed solvent, owing to an

  17. Utilization of mixed ligands to construct diverse Ni(II)-coordination polymers based on terphenyl-2,2′,4,4′-tetracarboxylic acid and varied N-donor co-ligands

    International Nuclear Information System (INIS)

    Wang, Chao; Zhao, Jun; Xia, Liang; Wu, Xue-Qian; Wang, Jian-Fang; Dong, Wen-Wen; Wu, Ya-Pan

    2016-01-01

    Three new coordination polymers, namely, {[Ni(H 2 L)(bix)(H 2 O) 2 ]·2h 2 O} n (1), {[Ni(HL)(Hdpa)(H 2 O) 2 ]·H 2 O} n (2), {[Ni(L) 0.5 (bpp)(H 2 O)]·H 2 O} n (3) (H 4 L=terphenyl-2,2′,4,4′-tetracarboxylic acid; bix=1,4-bis(imidazol-1-ylmethyl)benzene; dpa =4,4′-dipyridylamine; bpp=1,3-bis(4-pyridyl)propane), based on rigid H 4 L ligand and different N-donor co-ligands, have been synthesized under hydrothermal conditions. Compound 1 features a 3D 4-connected 6 6 -dia-type framework with H 4 L ligand adopts a μ 2 -bridging mode with two symmetry-related carboxylate groups in μ 1 -η 1 :η 0 monodentate mode. Compound 2 displays a 1D [Ni(HL)(Hdpa)] n ribbon chains motif, in which the H 4 L ligand adopts a μ 2 -bridging mode with two carboxylate groups in μ 1 -η 1 :η 1 and μ 1 -η 1 :η 0 monodentate modes, while 3 possesses a (4,4)-connected 3D frameworks with bbf topology, with H 4 L ligand displays a μ 4 -bridging coordination mode. The H 4 L ligand displays not only different deprotonated forms but also diverse coordination modes and conformations. The structural diversities among 1–3 have been carefully discussed, and the roles of N-donor co-ligands in the self-assembly of coordination polymers have been well documented. - Graphical abstract: Three nickel coordination polymers with different architectures based on mixed ligand system were synthesized and structurally characterized. Topology analyses indicate that 1 shows the 4-connected 6 6 -dia net, 1D ribbon chains for 2 and 3D (4,4)-connected bbf network for 3. Display Omitted - Highlights: • Three Ni-based coordination polymers with distinct features have been prepared. • Compound 1 features a 3D 4-connected 66-dia-type framework, 2 displays a 1D [Ni(HL)(Hdpa)] n ribbon chains motif, while 3 possesses a (4,4)-connected 3D frameworks with bbf topology. • The “mixed ligand assembled” strategy is significant potential for network design.

  18. Utilization of mixed ligands to construct diverse Ni(II)-coordination polymers based on terphenyl-2,2′,4,4′-tetracarboxylic acid and varied N-donor co-ligands

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chao [College of Materials and Chemical Engineering, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, Hubei Provincial Collaborative Innovation Center for New Energy Microgrid, China Three Gorges University, Yichang 443002 (China); Zhao, Jun, E-mail: junzhao08@126.com [College of Materials and Chemical Engineering, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, Hubei Provincial Collaborative Innovation Center for New Energy Microgrid, China Three Gorges University, Yichang 443002 (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 35002 (China); Xia, Liang [College of Materials and Chemical Engineering, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, Hubei Provincial Collaborative Innovation Center for New Energy Microgrid, China Three Gorges University, Yichang 443002 (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 35002 (China); Wu, Xue-Qian; Wang, Jian-Fang; Dong, Wen-Wen; Wu, Ya-Pan [College of Materials and Chemical Engineering, Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials, Hubei Provincial Collaborative Innovation Center for New Energy Microgrid, China Three Gorges University, Yichang 443002 (China)

    2016-06-15

    Three new coordination polymers, namely, {[Ni(H_2L)(bix)(H_2O)_2]·2h_2O}{sub n} (1), {[Ni(HL)(Hdpa)(H_2O)_2]·H_2O}{sub n} (2), {[Ni(L)_0_._5(bpp)(H_2O)]·H_2O}{sub n} (3) (H{sub 4}L=terphenyl-2,2′,4,4′-tetracarboxylic acid; bix=1,4-bis(imidazol-1-ylmethyl)benzene; dpa =4,4′-dipyridylamine; bpp=1,3-bis(4-pyridyl)propane), based on rigid H{sub 4}L ligand and different N-donor co-ligands, have been synthesized under hydrothermal conditions. Compound 1 features a 3D 4-connected 6{sup 6}-dia-type framework with H{sub 4}L ligand adopts a μ{sub 2}-bridging mode with two symmetry-related carboxylate groups in μ{sub 1}-η{sup 1}:η{sup 0} monodentate mode. Compound 2 displays a 1D [Ni(HL)(Hdpa)]{sub n} ribbon chains motif, in which the H{sub 4}L ligand adopts a μ{sub 2}-bridging mode with two carboxylate groups in μ{sub 1}-η{sup 1}:η{sup 1} and μ{sub 1}-η{sup 1}:η{sup 0} monodentate modes, while 3 possesses a (4,4)-connected 3D frameworks with bbf topology, with H{sub 4}L ligand displays a μ{sub 4}-bridging coordination mode. The H{sub 4}L ligand displays not only different deprotonated forms but also diverse coordination modes and conformations. The structural diversities among 1–3 have been carefully discussed, and the roles of N-donor co-ligands in the self-assembly of coordination polymers have been well documented. - Graphical abstract: Three nickel coordination polymers with different architectures based on mixed ligand system were synthesized and structurally characterized. Topology analyses indicate that 1 shows the 4-connected 6{sup 6}-dia net, 1D ribbon chains for 2 and 3D (4,4)-connected bbf network for 3. Display Omitted - Highlights: • Three Ni-based coordination polymers with distinct features have been prepared. • Compound 1 features a 3D 4-connected 66-dia-type framework, 2 displays a 1D [Ni(HL)(Hdpa)]{sub n} ribbon chains motif, while 3 possesses a (4,4)-connected 3D frameworks with bbf topology. • The “mixed ligand assembled

  19. Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

    Energy Technology Data Exchange (ETDEWEB)

    Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

    2011-12-28

    It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

  20. Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

    Science.gov (United States)

    Choi, Ji Eun; Yoo, Jinkyoung; Lee, Donghwa; Hong, Young Joon; Fukui, Takashi

    2018-04-01

    This study demonstrates the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. The WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

  1. Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

    Science.gov (United States)

    Osintsev, D.; Sverdlov, V.; Stanojević, Z.; Makarov, A.; Selberherr, S.

    2012-05-01

    We study the transport properties of the Datta-Das spin field-effect transistor built on InAs and Si. First, we demonstrate that the amplitude of the magnetoresistance oscillations as a function of the band mismatch between the ferromagnetic contacts and the semiconductor channel made of InAs decreases dramatically with increasing temperature. A shorter InAs channel is needed to create an InAs-based SpinFET which will operate at higher temperatures. Second, we show that the [1 0 0] orientation of the fin is preferable for silicon SpinFETs due to stronger modulation of the conductance as a function of spin-orbit interaction and magnetic field. Short silicon fins can be used for current modulation as a function of the conduction band mismatch between the channel and the ferromagnetic contacts only at relatively low temperatures. In contrast, longer silicon channels allow a TMR modulation at room temperature by changing the strength of the spin-orbit interaction through the gate bias.

  2. Atomic politics

    International Nuclear Information System (INIS)

    Skogmar, G.

    1979-01-01

    The authors basic point is that the military and civil sides of atomic energy cannot be separated. The general aim of the book is to analyze both the military and civil branches, and the interdependence between them, of American foreign policy in the atomic field. Atomic policy is seen as one of the most important imstruments of foreign policy which, in turn, is seen against the background of American imperialism in general. Firstly, the book investigates the most important means by which the United States has controlled the development in the nuclear field in other countries. These means include influencing the conditions of access to nuclear resources of various kinds, influencing the flow of technical-economic information and influencing international organizations and treaties bearing on atomic energy. The time period treated is 1945-1973. 1973 is chosen as the end-year of the study mainly because of the new conditions in the whole energy field initiated by the oil crisis in that year. The sources of the empirical work are mainly hearings before the Joint Committee on Atomic Energy of the U.S. Congress and legal material of various kinds. Secondly, the goals of the American policy are analyzed. The goals identified are armament effect, non-proliferation (horizontal), sales, and energy dependence. The relation between the main goals is discussed.The discussion is centered on the interdependence between the military and the civil aspects, conflict and coincidence of various goals, the relation between short-term and long-term goals, and the possibilities of using one goal as pretext for another. Thirdly, some causes of the changes in the atomic policy around 1953 and 1963 are identified. These are the strategic balance, the competitive situation, the capacity (of the American atomic productive apparatus), and the nuclear technological stage. The specific composition of these four factors at the two time-points can explain the changes of policy. (author)

  3. Electrical characterization of InAs/GaAs (110) nanostructures by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Beinik, Igor; Teichert, Christian [Institute of Physics, Montanuniversitaet Leoben (Austria); Diez-Merino, Laura; Tejedor, Paloma [Instituto de Ciencia de Materiales de Madrid (Spain). CSIC

    2009-07-01

    Self-assembled InAs quantum dots and wires have been studied over many years and still they are of great interest for application in nanoelectronics, high-speed spintronic devices, etc. Samples for our investigation were grown by molecular beam epitaxy on misoriented (110) GaAs substrates. Conductive Atomic Force Microscopy (C-AFM) technique was used to study the surface topography and conductivity simultaneously. Comparison of the corresponding cross-section profiles indicated that InAs nucleation takes place on the[1-10]-oriented step bunches, forming 3 nm-high and up to 70 nm-wide wires of variable length. On the other hand,[1-12]-type steps very rarely appeared to be decorated by InAs, also in agreement with previous TEM studies. The presented results prove that C-AFM technique might be successfully applied as a tool for investigation of electrical properties in III-V quantum dots and wires on the nanometer scale.

  4. Atomic secrecy

    International Nuclear Information System (INIS)

    Sweet, W.

    1979-01-01

    An article, The H-Bomb Secret: How We Got It, Why We're Telling It, by Howard Morland was to be published in The Progressive magazine in February, 1979. The government, after learning of the author's and the editors' intention to publish the article and failing to persuade them to voluntarily delete about 20% of the text and all of the diagrams showing how an H-bomb works, requested a court injunction against publication. Acting under the Atomic Energy Act of 1954, US District Court Judge Robert W. Warren granted the government's request on March 26. Events dealing with the case are discussed in this publication. Section 1, Progressive Hydrogen Bomb Case, is discussed under the following: Court Order Blocking Magazine Report; Origins of the Howard Morland Article; Author's Motives, Defense of Publication; and Government Arguments Against Disclosure. Section 2, Access to Atomic Data Since 1939, contains information on need for secrecy during World War II; 1946 Atomic Energy Act and its effects; Soviet A-Bomb and the US H-Bomb; and consequences of 1954 Atomic Energy Act. Section 3, Disputed Need for Atomic Secrecy, contains papers entitled: Lack of Studies on H-Bomb Proliferation; Administration's Position on H-Bombs; and National Security Needs vs Free Press

  5. Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

    Science.gov (United States)

    Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Schaller, Vanessa; Wirths, Stephan; Moselund, Kirsten; Luisier, Mathieu; Karg, Siegfried; Riel, Heike

    2017-04-12

    Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.

  6. Ambient temperature dependence on emission spectrum of InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, C.Y.; Yoon, S.F. [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore); Chua, S.J. [Institute of Materials Research and Engineering, Faculty of Engineering (Singapore)

    2009-04-15

    Semiconductor superluminescent diodes (SLDs) are important broadband light source for fiber optic gyroscope and biomedical imaging. Quantum dots (QDs) have been proposed to be the best candidate for broadband light sources due to the inhomogeneous broadening of the gain spectrum as a result of the inherited size inhomogeneity of the self-assembled QD growth. In this work, the effect of ambient temperature (25-100 C) on the emission spectrum of InAs QDs with wideband emission was investigated. It was found that the full-width at half-maximum (FWHM) of the photoluminescence (PL) spectra remains more than 125 nm throughout the temperature range, and the redshift as function of temperature is approximately 0.27 meV/K. Activation energy of 270 meV is extracted from the Arrhenius plot and the PL quenching at high temperature is attributed to thermally induced carriers escaping out of the In{sub 0.15}Ga{sub 0.85}As strain-reducing layer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. An Integrated Nonlinear Analysis library - (INA) for solar system plasma turbulence

    Science.gov (United States)

    Munteanu, Costel; Kovacs, Peter; Echim, Marius; Koppan, Andras

    2014-05-01

    We present an integrated software library dedicated to the analysis of time series recorded in space and adapted to investigate turbulence, intermittency and multifractals. The library is written in MATLAB and provides a graphical user interface (GUI) customized for the analysis of space physics data available online like: Coordinated Data Analysis Web (CDAWeb), Automated Multi Dataset Analysis system (AMDA), Planetary Science Archive (PSA), World Data Center Kyoto (WDC), Ulysses Final Archive (UFA) and Cluster Active Archive (CAA). Three main modules are already implemented in INA : the Power Spectral Density (PSD) Analysis, the Wavelet and Intemittency Analysis and the Probability Density Functions (PDF) analysis.The layered structure of the software allows the user to easily switch between different modules/methods while retaining the same time interval for the analysis. The wavelet analysis module includes algorithms to compute and analyse the PSD, the Scalogram, the Local Intermittency Measure (LIM) or the Flatness parameter. The PDF analysis module includes algorithms for computing the PDFs for a range of scales and parameters fully customizable by the user; it also computes the Flatness parameter and enables fast comparison with standard PDF profiles like, for instance, the Gaussian PDF. The library has been already tested on Cluster and Venus Express data and we will show relevant examples. Research supported by the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement no 313038/STORM, and a grant of the Romanian Ministry of National Education, CNCS UEFISCDI, project number PN-II-ID PCE-2012-4-0418.

  8. Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

    2015-02-07

    Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

  9. Correlation between the Montreal Cognitive Assessment-Indonesian Version (Moca-INA) and the Mini-Mental State Examination (MMSE) in Elderly.

    Science.gov (United States)

    Rambe, Aldy Safruddin; Fitri, Fasihah Irfani

    2017-12-15

    As the rapid growth of the elderly population and the increased prevalence of Alezheimer's Disease and related disorders, there is an increasing need for effective cognitive screening. The Mini Mental State Examination (MMSE) is the most frequently used screening test of cognitive impairment because of its convenience. The Montreal Cognitive Assessment-Indonesian Version (MoCA-INA) has been validated and recently been used as a cognitive screening tool. The aim of this study was to compare the MMSE and MoCA-INA scores and to determine the correlation between the MMSE and MoCA-INA scores in elderly. This was a cross-sectional study including 83 elderly subjects from November 2016 until June 2017. We performed MMSE and MoCA-INA for assessment of cognitive function and the time between each test was at least 30 minutes. The study included 83 subjects which were consisted of 46 (55.4%) males and 37 (44.6%) females. The mean age was 69.19 ± 4.23 ranging from 65 to 79 years old. The average MMSE scores was 24.96 ± 3.38 (range 14 to 30). The average MoCA-INA scores was 21.06 ± 4.56 (range 5 to 30). The Pearson correlation coefficient between the scores was 0.71 (p<0.005). There were no significant differences of both scores based on history of hypertension, diabetes mellitus and previous stroke, but there was a significant difference in MMSE scores based on level of education. The MoCA-INA score showed a good correlation with the MMSE score. Both tests showed comparable results but MoCA-INA showed lower average with wider range of scores.

  10. Antimatter atoms

    International Nuclear Information System (INIS)

    Anon.

    1996-01-01

    In january 1996, CERN broadcasted the information of the creation of nine anti-hydrogen atoms, observed through disintegration products. The experimental facility was CERN LEAR ring. An antiproton beam scattered a xenon jet, and the resulting antimatter was first selected by its insensitivity to beam bending magnets. Their disintegration was detected in thin NaI detectors, in which the anti-atoms are at once deprived from their positron. Then, magnetic and time-of-flight spectrometers are used. (D.L.)

  11. Atomic theories

    CERN Document Server

    Loring, FH

    2014-01-01

    Summarising the most novel facts and theories which were coming into prominence at the time, particularly those which had not yet been incorporated into standard textbooks, this important work was first published in 1921. The subjects treated cover a wide range of research that was being conducted into the atom, and include Quantum Theory, the Bohr Theory, the Sommerfield extension of Bohr's work, the Octet Theory and Isotopes, as well as Ionisation Potentials and Solar Phenomena. Because much of the material of Atomic Theories lies on the boundary between experimentally verified fact and spec

  12. Atoms stories

    International Nuclear Information System (INIS)

    Radvanyi, P.; Bordry, M.

    1988-01-01

    Physicists from different countries told each evening during one learning week, to an audience of young people, some great discoveries in evoking the difficulties and problems to which the researchers were confronted. From Antiquity to a more recent history, it is a succession of atoms stories. (N.C.)

  13. Atomic physics

    International Nuclear Information System (INIS)

    Held, B.

    1991-01-01

    This general book describes the change from classical physics to quantum physics. The first part presents atom evolution since antiquity and introduces fundamental quantities and elements of relativity. Experiments which have contributed to the evolution of knowledge on matter are analyzed in the second part. Applications of wave mechanics to the study of matter properties are presented in the third part [fr

  14. Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

    2009-06-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  15. Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

    Science.gov (United States)

    Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

    2018-05-01

    We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

  16. 99mTc-MIBI/123I-Na subtraction scanning for localized parathyroid adenoma in patients with asymptomatic/mild primary hyperparathyroidism

    International Nuclear Information System (INIS)

    Tanaka, Yuji; Funahashi, Hiroomi; Imai, Tsuneo

    1996-01-01

    Primary hyperparathyroidism is most commonly detected as a mild elevation of the serum calcium concentration. In the present study, the utility of 99m Tc-methoxyisobutylisonitrile (MIBI) imaging before initial surgery was evaluated for localizing abnormal parathyroid glands in patients with asymptomatic and mild primary hyperparathyroidism. The results were compared with those of thallium-technetium subtraction scanning (TTSS). 99m Tc-MIBI/ 123 I-Na subtraction scanning was performed in 11 patients, and TTSS was performed in 10 of them. The sensitivity was 100% and the positive predictive value was 92% for 99m Tc-MIBI/ 123 I-Na, while the sensitivity was 50% and the positive predictive value was 100% for TTSS. The smallest gland detected weighed 85 mg in 99m Tc-MIBI/ 123 I-Na, and 570 mg in TTSS. There was a difference between the median weight of adenomas which were detected by 99m Tc-MIBI/ 123 I-Na (754 mg), and those which were detected by TTSS (1,195 mg). These results suggest that TTSS parathyroid scintigraphy could give way to 99m Tc-MIBI/ 123 I-Na parathyroid scintigraphy for improved detection of low-weight abnormal parathyroid glands. (author)

  17. The Effect of INA [(R)-1-O-(1-Pyrenylmethyl)Glycerol] Insertions on the Structure and Biological Activity of a G-Quadruplex from a Critical Kras G-Rich Sequence

    DEFF Research Database (Denmark)

    Cogoi, Susanna; Paramasivan, Manikandan; Xodo, Luigi E.

    2007-01-01

    Quadruplex-forming oligonucleotides containing INA [(R)-1-O-(1-pyrenylmethyl)glycerol] insertions have been designed and studied for their capacity to inhibit the expression of the KRAS oncogene in pancreatic adenocarcinoma cells. It is found that INA can influence the folding topology of the G-q...

  18. STM/STS Measurements of Two-Dimensional Electronic States in Magnetic Fields at Epitaxially Grown InAs(111)A Surfaces

    International Nuclear Information System (INIS)

    Niimi, Y; Kanisawa, K; Kojima, H; Kambara, H; Hirayama, Y; Tarucha, S; Fukuyama, Hiroshi

    2007-01-01

    The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs substrate was studied at very low temperatures in magnetic fields up to 6 T by scanning tunneling microscopy and spectroscopy. We observed a series of peaks, associated with Landau quantization of the two-dimensional electron system (2DES), in the tunnel spectra just above the subband energy (-80 meV) of the 2DES. The intervals between the peaks are consistent with the estimation from the effective mass of the 2DES at the InAs surface. In a wider energy range, another type of oscillation which was independent of magnetic field was also observed. This oscillation can be explained by the energy dependence of the transmission probability of the tunneling current through the Schottky barrier formed at the interface between the InAs film and GaAs substrate

  19. Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Hendra, P. I. B., E-mail: ib.hendra@gmail.com; Rahayu, F., E-mail: ib.hendra@gmail.com; Darma, Y., E-mail: ib.hendra@gmail.com [Physical Vapor Deposition Laboratory, Physics of Material Electronics Research, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

    2014-03-24

    Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

  20. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-06-03

    We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

  1. Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Stobbe, Søren; Nikolaev, Ivan S.

    2008-01-01

    and a theoretical model, we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics......The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results...

  2. Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    International Nuclear Information System (INIS)

    Seredin, P. V.; Domashevskaya, E. P.; Lukin, A. N.; Arsent'ev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

    2008-01-01

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

  3. Photoluminescence characteristics of InAs quantum dots grown by STM/MBE site-control technique

    Energy Technology Data Exchange (ETDEWEB)

    Nishikawa, S.; Kohmoto, S.; Nakamura, H.; Ishikawa, T.; Asakawa, K.; Wada, O. [Femtosecond Technology Research Association, Tsukuba, Ibaraki (Japan). FESTA Lab.

    2001-03-08

    This paper describes micro-photoluminescence (PL) analysis of site-controlled QDs (SCQDs) grown using a novel in-situ MBE growth technique in which sites of self-assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth. (orig.)

  4. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    International Nuclear Information System (INIS)

    Alonso-Gonzalez, Pablo; Gonzalez, Luisa; Gonzalez, Yolanda; Fuster, David; Fernandez-Martinez, Ivan; Martin-Sanchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates

  5. Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

    Energy Technology Data Exchange (ETDEWEB)

    Xie, H. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287-6106 (United States); Prioli, R. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Departamento de Física, Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro 22452-900 RJ (Brazil); Fischer, A. M.; Ponce, F. A., E-mail: ponce@asu.edu [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Kawabata, R. M. S.; Pinto, L. D.; Souza, P. L. [LabSem, CETUC, Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro 22452-900 RJ (Brazil); Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Jakomin, R. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Campus de Xerem, UFRJ, Duque de Caxias-RJ (Brazil); Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Instituto de Física, UFRJ, Rio de Janeiro-RJ (Brazil)

    2016-07-21

    The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

  6. Atom-surface potentials and atom interferometry

    International Nuclear Information System (INIS)

    Babb, J.F.

    1998-01-01

    Long-range atom-surface potentials characterize the physics of many actual systems and are now measurable spectroscopically in deflection of atomic beams in cavities or in reflection of atoms in atomic fountains. For a ground state, spherically symmetric atom the potential varies as -1/R 3 near the wall, where R is the atom-surface distance. For asymptotically large distances the potential is weaker and goes as -1/R 4 due to retardation arising from the finite speed of light. This diminished interaction can also be interpreted as a Casimir effect. The possibility of measuring atom-surface potentials using atomic interferometry is explored. The particular cases studied are the interactions of a ground-state alkali-metal atom and a dielectric or a conducting wall. Accurate descriptions of atom-surface potentials in theories of evanescent-wave atomic mirrors and evanescent wave-guided atoms are also discussed. (author)

  7. Stimulated Emission from InAs (GaAs Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region

    Directory of Open Access Journals (Sweden)

    Dusan Pudis

    2002-01-01

    Full Text Available Our study is focused on the optical and electronic properties of InAs (GaAs monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temperature electroluminescence measurements of InAs (GaAs/Al0.33GA0.67As revealed the excellent emission spectra in the visib le range 630-690 nm. The stimulated emission from these structures across their cleavage planes has been observed at low  temperatures what is highly interesting for potential device applications.

  8. InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

    International Nuclear Information System (INIS)

    Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mourão, R. T.; Pires, M. P.; Micha, D. N.; Xie, H.; Fischer, A. M.; Ponce, F. A.

    2014-01-01

    InAs quantum dot multilayers have been grown using Al x Ga 1−x As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure

  9. Exotic atoms

    International Nuclear Information System (INIS)

    Kunselman, R.

    1993-01-01

    The experiments use a solid hydrogen layer to form muonic hydrogen isotopes that escape into vacuum. The method relies on transfer of the muon from protium to either a deuteron or a triton. The resulting muonic deuterium or muonic tritium will not immediately thermalize because of the very low elastic cross sections, and may be emitted from the surface of the layer. Measurements which detect decay electrons, muonic x-rays, and fusion products have been used to study the processes. A target has been constructed which exploits muonic atom emission in order to learn more about the energy dependence of transfer and muon molecular formation

  10. Direct radiocarbon dates for Vindija G1 and Velika Pećina Late Pleistocene hominid remains

    Science.gov (United States)

    Smith, Fred H.; Trinkaus, Erik; Pettitt, Paul B.; Karavanić, Ivor; Paunović, Maja

    1999-01-01

    New accelerator mass spectrometry radiocarbon dates taken directly on human remains from the Late Pleistocene sites of Vindija and Velika Pećina in the Hrvatsko Zagorje of Croatia are presented. Hominid specimens from both sites have played critical roles in the development of current perspectives on modern human evolutionary emergence in Europe. Dates of ≈28 thousand years (ka) before the present (B.P.) and ≈29 ka B.P. for two specimens from Vindija G1 establish them as the most recent dated Neandertals in the Eurasian range of these archaic humans. The human frontal bone from Velika Pećina, generally considered one of the earliest representatives of modern humans in Europe, dated to ≈5 ka B.P., rendering it no longer pertinent to discussions of modern human origins. Apart from invalidating the only radiometrically based example of temporal overlap between late Neandertal and early modern human fossil remains from within any region of Europe, these dates raise the question of when early modern humans first dispersed into Europe and have implications for the nature and geographic patterning of biological and cultural interactions between these populations and the Neandertals. PMID:10535913

  11. Design of a multivariable controller for a CANDU 600 MWe nuclear power plant using the INA method

    International Nuclear Information System (INIS)

    Roy, N.; Boisvert, J.; Mensah, S.

    1984-04-01

    The development of large and complex nuclear and process plants requires high-performance control systems, designed with rigorous multivariable techniques. This work is part of an analytical study demonstrating the real potential of multivariable methods. It covers every step in the design of a multi-variable controller for a Gentilly-2 type CANDU 600 MWe nuclear power plant using the Inverse Nyquist Array (INA) method. First the linear design model and its preliminary modifications are described. The design tools are reviewed and the operations required to achieve open-loop diagonal dominance are thoroughly described. Analysis of the closed-loop system is then performed and a feedback matrix is selected to meet the design specifications. The performance of the controller on the linear model is verified by simulation. Finally, the controller is implemented on the reference non-linear model to assess its overall performance. The results show that the INA method can be used successfully to design controllers for large and complex systems

  12. The investigation of alloy formation during InAs nanowires growth on GaAs (111)B substrate

    Energy Technology Data Exchange (ETDEWEB)

    Saqib, Muhammad; Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3, Siegen 57072 (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institute (PGI-9), Forschungzentrum Juelich, Juelich 52425 (Germany)

    2013-07-01

    A possible way to obtain nanowires is the growth in molecular beam epitaxy (MBE) on the (111) oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of two different series (etched and unetched) of NWs samples. Vertically aligned InAs nanowires (NWs) doped with Si were self-assisted grown by molecular beam epitaxy on GaAs [111]B substrates covered with a thin SiO{sub x} layer. Using a combination of symmetric and asymmetric X-ray diffraction we study the influence of Si supply on the growth process and nanostructure formation. We find that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, we observe the formation of a Ga{sub 0.2}In{sub 0.8}As alloy if the growth is performed on samples covered by a defective (etched) oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Gallium concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

  13. Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Rieger, Torsten; Lepsa, Mihail Ion [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first X-ray diffraction measurements of GaAs-core/InAs-shell nanowires grown on GaAs(111) by molecular beam epitaxy. Using symmetric- and grazing-incidence X-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.

  14. Spin Qubits in GaAs Heterostructures and Gating of InAs Nanowires for Lowtemperature Measurements

    DEFF Research Database (Denmark)

    Nissen, Peter Dahl

    of the contenders in the race to build a large-scale quantum computer, is such a component, and research aiming to build, manipulate and couple spin qubits is looking at many materials systems to nd one where the requirements for fast control and long coherence time can be combined with ecient coupling between...... distant qubits. This thesis presents electric measurement on two of the materials systems currently at the forefront of the spin qubit race, namely InAs nanowires and GaAs/AlGaAs heterostructures. For the InAs nanowires we investigate dierent gating geometries towards the goal of dening stable quantum...... electrodes induces tunable barriers of up to 0:25 eV. From the temperature dependence of the conductance, the barrier height is extracted and mapped as a function of gate voltage. Top and bottom gates are similar to each other in terms of electrostatic couplings (lever arms 0:10:2 eV=V) and threshold...

  15. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

    International Nuclear Information System (INIS)

    Joyce, Hannah J; Docherty, Callum J; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B; Gao Qiang; Tan, H Hoe; Jagadish, Chennupati

    2013-01-01

    We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm 2 V −1 s −1 , which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s −1 . This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10 5   cm s −1 . These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices. (paper)

  16. The influence of atmosphere on performance of pure-phase WZ and ZB InAs nanowire transistors.

    Science.gov (United States)

    Ullah, Abu Rifat; Joyce, Hannah J; Tan, Hoe; Jagadish, Chennupati; Micolich, Adam P

    2017-09-21

    We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires. © 2017 IOP Publishing Ltd.

  17. The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

    Science.gov (United States)

    Ullah, A. R.; Joyce, H. J.; Tan, H. H.; Jagadish, C.; Micolich, A. P.

    2017-11-01

    We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

  18. Influence of bone metastases in the red marrow 131INa internal dosimetry

    International Nuclear Information System (INIS)

    Llina Fuentes, C.S.; Cabrejas, M.I.; Cabrejas, R.

    2008-01-01

    Full text: This research analyses the evaluation of the absorbed dose in the bone marrow for developing a calculation formalism, based on MIRD methodology, to take into account the influence of bone metastases in patients treated with 131 INa due to thyroid differentiated cancer (DTC). A methodology of image processing is stated for later quantification purposes. The dose contribution, mainly electronic, from trabecular bone and cortical bone to red marrow is considered and a general equation is developed to add that contribution. The biodistribution of active bone marrow in adults bone regions is considered from different studies (Cristy (1981), ICRP 70 (1995), Bouchet et al. (2000), ICRP 89 (2004)). It is assumed that the 60% of red marrow is in the axial skeleton, 25% in ribs, femoral head, proximal portion of chimney and breast bone, and 10% in skull and scapula. Accordingly to this distribution, the bone regions with more percentage are included to calculate the influence in the red marrow absorbed dose. The absorbed dose in bone marrow is calculated considering 4 sources: bone marrow, bone tissue with metastases, rest of the bone tissue without metastases and rest of soft tissue. Conversion factors for fifteen regions of the skeleton, obtained from Eckerman Monte Carlo simulations, were used to calculate absorbed dose in each region of bone. The absorbed dose from this formalism is based on specific biokinetic data from patients and dosimetric models. It was considered of interest to compare the results with the biological dosimetry in parallel. From this biological method, the accumulated absorbed dose from previous therapies and also the bone marrow absorbed dose due to the last radioiodine treatment can be obtained in order to compare dose assessment results between the developed formalism and biological dosimetry. The results obtained with the proposed formalism, show that lesions in some bones regions contribute more to the absorbed dose than lesions in

  19. Atom Skimmers and Atom Lasers Utilizing Them

    Science.gov (United States)

    Hulet, Randall; Tollett, Jeff; Franke, Kurt; Moss, Steve; Sackett, Charles; Gerton, Jordan; Ghaffari, Bita; McAlexander, W.; Strecker, K.; Homan, D.

    2005-01-01

    Atom skimmers are devices that act as low-pass velocity filters for atoms in thermal atomic beams. An atom skimmer operating in conjunction with a suitable thermal atomic-beam source (e.g., an oven in which cesium is heated) can serve as a source of slow atoms for a magneto-optical trap or other apparatus in an atomic-physics experiment. Phenomena that are studied in such apparatuses include Bose-Einstein condensation of atomic gases, spectra of trapped atoms, and collisions of slowly moving atoms. An atom skimmer includes a curved, low-thermal-conduction tube that leads from the outlet of a thermal atomic-beam source to the inlet of a magneto-optical trap or other device in which the selected low-velocity atoms are to be used. Permanent rare-earth magnets are placed around the tube in a yoke of high-magnetic-permeability material to establish a quadrupole or octupole magnetic field leading from the source to the trap. The atoms are attracted to the locus of minimum magnetic-field intensity in the middle of the tube, and the gradient of the magnetic field provides centripetal force that guides the atoms around the curve along the axis of the tube. The threshold velocity for guiding is dictated by the gradient of the magnetic field and the radius of curvature of the tube. Atoms moving at lesser velocities are successfully guided; faster atoms strike the tube wall and are lost from the beam.

  20. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

    Science.gov (United States)

    Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

    2016-12-01

    The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

  1. INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

    NARCIS (Netherlands)

    Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

    1995-01-01

    The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

  2. Self-assembled InAs quantum dots. Properties, modification and emission processes; Selbstorganisierte InAs-Quantenpunkte. Eigenschaften, Modifizierung und Emissionsprozesse

    Energy Technology Data Exchange (ETDEWEB)

    Schramm, A.

    2007-09-06

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  3. Atomic reactor thermal engineering

    International Nuclear Information System (INIS)

    Kim, Gwang Ryong

    1983-02-01

    This book starts the introduction of atomic reactor thermal engineering including atomic reaction, chemical reaction, nuclear reaction neutron energy and soon. It explains heat transfer, heat production in the atomic reactor, heat transfer of fuel element in atomic reactor, heat transfer and flow of cooler, thermal design of atomic reactor, design of thermodynamics of atomic reactor and various. This deals with the basic knowledge of thermal engineering for atomic reactor.

  4. Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

    Science.gov (United States)

    Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

    2018-02-01

    We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

  5. BIAYA KLAIM INA CBGS DAN BIAYA RIIL PENYAKIT KATASTROPIK RAWAT INAP PESERTA JAMKESMAS DI RUMAH SAKIT STUDI DI 10 RUMAH SAKIT MILIK KEMENTERIAN KESEHATAN JANUARI–MARET 2012

    Directory of Open Access Journals (Sweden)

    Wasis Budiarto

    2013-08-01

    Full Text Available Latar belakang: Implementasi sistem INA-CBGs bagi pasien penyakit katastropik (jantung, kanker, stroke peserta Jamkesmas di rumah sakit, memberikan konsekuensi di satu pihak bahwa penyakit katastropik merupakan ancaman terhadap membengkaknya pembiayaan Jamkesmas di masa datang, sedangkan di pihak lain, rumah sakit merasakan bahwa biaya penggantian klaim INA CBGs lebih rendah dari tarif yang berlaku dirumah sakit. Tujuan: Tujuan penelitian ini untuk memperoleh gambaran biaya pengobatan penyakit katastropik dan perbandingan pembiayaan klaim berdasarkan INA-DRGs dengan biaya pengobatan riil penyakit katastropik dirumah sakit. Jenis penelitian adalah deskriptif menurut perspektif rumah sakit. Metode: Metode pengambilan data dilakukan secara retrospektif yang diambil dari penelusuran dokumen catatan medik pasien penyakit katastropik di 10 rumah sakit selama 3 bulan (Januari–Maret 2012. Analisis data dilakukan secara deskriptif. Hasil: Hasil penelitian menunjukkan bahwa pasien Jamkesmas yang dirawat dengan kasus katastropik terdiri dari penyakit jantung sebesar37,11%, penyakit kanker 23,54% dan sisanya sebesar 39,35% pasien penyakit stroke. Kesimpulan: Biaya pengobatan rawat inap berdasarkan tarif rumah sakit kelas A jauh lebih besar dibandingkan kelas B dan RS Khusus, biaya klaim berdasarkan INA-CBGs jauh lebih besar di rumah sakit kelas A dibanding kelas B dan RS Khusus. Komponen biaya yang banyak peruntukannya adalah biaya akomodasi, tindakan ruangan, pemeriksaan laboratorium, tindakan intervensi nonbedah untuk jantung, tindakan operasi untuk kanker serta biaya obat-obatan. Biaya penggantian klaim penyakit katastropik berdasarkan INA CBGs lebih besar dibandingkan dengan biaya riil berdasarkan tarif rumah sakit, sehingga untuk penyakit katastropik rumah sakit tidak merugi. Untuk itu pelaksanaan kebijakan rujukan berjenjang bagi peserta Jamkesmas harus diawasi secara ketat sehingga pelayanan kesehatan bagi penduduk miskin menjadi lebih terjamin

  6. Atomic energy

    International Nuclear Information System (INIS)

    Ramanna, R.

    1978-01-01

    Development of nuclear science in India, particularly the research and development work at the Bhabha Atomic Research Centre (BARC), Bombay, is described. Among the wide range of materials developed for specific functions under rigorous conditions are nuclear pure grade uranium, zirconium and beryllium, and conventional materials like aluminium, carbon steel and stainless steels. Radioisotopes are produced and used for tracer studies in various fields. Various types of nuclear gauges and nuclear instruments are produced. Radiations have been used to develop new high yielding groundnut mutants with large kernals. The sterile male technique for pest control and radiosterilization technique to process potatoes, onions and marine foods for storage are ready for exploitation. Processes and equipment have been developed for production of electrolytic hydrogen, electrothermal phosphorus and desalinated water. Indigenously manufactured components and materials are now being used for the nuclear energy programme. Indian nuclear power programme strategy is to build heavy water reactors and to utilise their byproduct plutonium and depleted uranium to feed fast breeder reactors which will produce more fissile material than burnt. Finally a special mention has been made of the manpower development programme of the BARC. BARC has established a training school in 1957 giving advanced training in physics, chemistry and various branches of engineering and metallurgy

  7. International Active Surveillance Study of Women Taking Oral Contraceptives (INAS-OC Study

    Directory of Open Access Journals (Sweden)

    Assmann Anita

    2009-11-01

    Full Text Available Abstract Background A 24-day regimen of contraceptive doses of drospirenone and ethinylestradiol (DRSP/EE 24d was recently launched. This regimen has properties which may be beneficial for certain user populations (e.g., women suffering from premenstrual dysphoric disorder or acne. However, it is unknown whether this extended regimen has an impact on the cardiovascular risk associated with the use of oral contraceptives (OCs. The INternational Active Surveillance study of women taking Oral Contraceptives (INAS-OC is designed to investigate the short- and long-term safety of the new regimen in a population which is representative for the typical user of oral contraceptives. Methods/Design A large, prospective, controlled, non-interventional, long-term cohort study with active surveillance of the study participants has been chosen to ensure reliable and valid results. More than 2,000 gynecologists in the US and 5 European countries (Austria, Germany, Italy, Poland, and Sweden will recruit more than 80,000 OC users. The two to five year follow-up of these women will result in at least 220,000 documented women-years. The main clinical outcomes of interest for the follow-up are deep venous thrombosis, pulmonary embolism, acute myocardial infarction and cerebrovascular accidents. Secondary objectives are general safety, effectiveness and drug utilization pattern of DRSP/EE 24d, return to fertility after stop of OC use, as well as the baseline risk for users of individual OC formulations. Because of the non-interference character of this study, potential participants (first-time users or switchers are informed about the study only after the decision regarding prescription of a new OC. There are no specific medical inclusion or exclusion criteria. Study participation is voluntary and a written informed consent is required. After the baseline questionnaire, follow-up questionnaires will be mailed to the participants every 6 months for up to 5 years after

  8. International Active Surveillance Study of Women Taking Oral Contraceptives (INAS-OC Study).

    Science.gov (United States)

    Dinger, Juergen C; Bardenheuer, Kristina; Assmann, Anita

    2009-11-18

    A 24-day regimen of contraceptive doses of drospirenone and ethinylestradiol (DRSP/EE 24d) was recently launched. This regimen has properties which may be beneficial for certain user populations (e.g., women suffering from premenstrual dysphoric disorder or acne). However, it is unknown whether this extended regimen has an impact on the cardiovascular risk associated with the use of oral contraceptives (OCs). The INternational Active Surveillance study of women taking Oral Contraceptives (INAS-OC) is designed to investigate the short- and long-term safety of the new regimen in a population which is representative for the typical user of oral contraceptives. A large, prospective, controlled, non-interventional, long-term cohort study with active surveillance of the study participants has been chosen to ensure reliable and valid results. More than 2,000 gynecologists in the US and 5 European countries (Austria, Germany, Italy, Poland, and Sweden) will recruit more than 80,000 OC users. The two to five year follow-up of these women will result in at least 220,000 documented women-years. The main clinical outcomes of interest for the follow-up are deep venous thrombosis, pulmonary embolism, acute myocardial infarction and cerebrovascular accidents. Secondary objectives are general safety, effectiveness and drug utilization pattern of DRSP/EE 24d, return to fertility after stop of OC use, as well as the baseline risk for users of individual OC formulations. Because of the non-interference character of this study, potential participants (first-time users or switchers) are informed about the study only after the decision regarding prescription of a new OC. There are no specific medical inclusion or exclusion criteria. Study participation is voluntary and a written informed consent is required. After the baseline questionnaire, follow-up questionnaires will be mailed to the participants every 6 months for up to 5 years after baseline. Self-reported serious adverse events

  9. Bremsstrahlung in atom-atom collisions

    International Nuclear Information System (INIS)

    Amus'ya, M.Y.; Kuchiev, M.Y.; Solov'ev, A.V.

    1985-01-01

    It is shown that in the collision of a fast atom with a target atom when the frequencies are on the order of the potentials or higher, there arises bremsstrahlung comparable in intensity with the bremsstrahlung emitted by an electron with the same velocity in the field of the target atom. The mechanism by which bremsstrahlung is produced in atom-atom collisions is elucidated. Results of specific calculations of the bremsstrahlung spectra are given for α particles and helium atoms colliding with xenon

  10. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

    Science.gov (United States)

    Levchenko, Iryna; Tomashyk, Vasyl; Stratiychuk, Iryna; Malanych, Galyna; Korchovyi, Andrii; Kryvyi, Serhii; Kolomys, Oleksandr

    2018-04-01

    The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical-mechanical polishing with the (NH4)2Cr2O7-HBr-CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7-HBr-ethylene glycol solutions produces the clean surface of the nanosize level (R a < 0.5 nm).

  11. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    Energy Technology Data Exchange (ETDEWEB)

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  12. Atomic weight versus atomic mass controversy

    International Nuclear Information System (INIS)

    Holden, N.E.

    1985-01-01

    A problem for the Atomic Weights Commission for the past decade has been the controversial battle over the names ''atomic weight'' and ''atomic mass''. The Commission has considered the arguments on both sides over the years and it appears that this meeting will see more of the same discussion taking place. In this paper, I review the situation and offer some alternatives

  13. Highly excited atoms

    International Nuclear Information System (INIS)

    Kleppner, D.; Littman, M.G.; Zimmerman, M.L.

    1981-01-01

    Highly excited atoms are often called Rydberg atoms. These atoms have a wealth of exotic properties which are discussed. Of special interest, are the effects of electric and magnetic fields on Rydberg atoms. Ordinary atoms are scarcely affected by an applied electric or magnetic field; Rydberg atoms can be strongly distorted and even pulled apart by a relatively weak electric field, and they can be squeezed into unexpected shapes by a magnetic field. Studies of the structure of Rydberg atoms in electric and magnetic fields have revealed dramatic atomic phenomena that had not been observed before

  14. Laser-assisted atom-atom collisions

    International Nuclear Information System (INIS)

    Roussel, F.

    1984-01-01

    The basic layer-assisted atom-atom collision processes are reviewed in order to get a simpler picture of the main physical facts. The processes can be separated into two groups: optical collisions where only one atom is changing state during the collision, the other acting as a spectator atom, and radiative collisions where the states of the two atoms are changing during the collision. All the processes can be interpreted in terms of photoexcitation of the quasimolecule formed during the collisional process. (author)

  15. Code ATOM for calculation of atomic characteristics

    International Nuclear Information System (INIS)

    Vainshtein, L.A.

    1990-01-01

    In applying atomic physics to problems of plasma diagnostics, it is necessary to determine some atomic characteristics, including energies and transition probabilities, for very many atoms and ions. Development of general codes for calculation of many types of atomic characteristics has been based on general but comparatively simple approximate methods. The program ATOM represents an attempt at effective use of such a general code. This report gives a brief description of the methods used, and the possibilities of and limitations to the code are discussed. Characteristics of the following processes can be calculated by ATOM: radiative transitions between discrete levels, radiative ionization and recombination, collisional excitation and ionization by electron impact, collisional excitation and ionization by point heavy particle (Born approximation only), dielectronic recombination, and autoionization. ATOM explores Born (for z=1) or Coulomb-Born (for z>1) approximations. In both cases exchange and normalization can be included. (N.K.)

  16. Towards quantitative three-dimensional characterisation of InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Kuznetsova, Nadezda

    2011-01-01

    the applicability of both high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) tomography and atom probe tomography (APT) to the study of surface and buried InAs/InGaAsP QDs grown by metal organic vapour phase epitaxy (MOVPE). Electron tomography was carried out in an FEI Titan TEM...... to their suitability for electron tomography, these specimens can be used for APT, for which needle-shaped specimens with sharp tips (narrower than 100 nm) are required. Our ongoing experiments involve the application of both HAADF STEM tomography and APT to the same QD, in order to better understand its morphology...

  17. Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential

    Energy Technology Data Exchange (ETDEWEB)

    Carrete, J; Longo, R C; Gallego, L J, E-mail: jesus.carrete@usc.es [Departamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela (Spain)

    2011-05-06

    A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity {lambda} of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of {lambda} about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

  18. Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

    Science.gov (United States)

    Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Rosa-Clot, M.; Taddei, S.

    1997-06-01

    Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

  19. Direct-Bandgap InAs Quantum-Dots Have Long-Range Electron--Hole Exchange Whereas Indirect Gap Si Dots Have Short-Range Exchange

    International Nuclear Information System (INIS)

    Juo, J.W.; Franceschetti, A.; Zunger, A.

    2009-01-01

    Excitons in quantum dots manifest a lower-energy spin-forbidden 'dark' state below a spin-allowed 'bright' state; this splitting originates from electron-hole (e-h) exchange interactions, which are strongly enhanced by quantum confinement. The e-h exchange interaction may have both a short-range and a long-range component. Calculating numerically the e-h exchange energies from atomistic pseudopotential wave functions, we show here that in direct-gap quantum dots (such as InAs) the e-h exchange interaction is dominated by the long-range component, whereas in indirect-gap quantum dots (such as Si) only the short-range component survives. As a result, the exciton dark/bright splitting scales as 1/R 2 in InAs dots and 1/R 3 in Si dots, where R is the quantum-dot radius.

  20. In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

    Energy Technology Data Exchange (ETDEWEB)

    Dimakis, Emmanouil; Ramsteiner, Manfred; Huang, Chang-Ning; Trampert, Achim; Riechert, Henning; Geelhaar, Lutz [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3, 57072 Siegen (Germany)

    2013-09-30

    Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm{sup −1} were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.

  1. Solução concentrada de albumina eqüina na fluidoterapia em eqüinos com desidratação leve a moderada

    OpenAIRE

    Belli,C.B.; Michima,L.E.S.; Latorre,S.M.; Fernandes,W.R.

    2008-01-01

    Avaliou-se o efeito da solução concentrada de albumina eqüina diluída a 5% em solução fisiológica (SF) durante fluidoterapia em eqüinos, após indução de desidratação leve a moderada, utilizando-se cinco eqüinos adultos, sem alterações clínicas. Cada animal passou por dois protocolos de fluidoterapia: apenas com SF (metade sob pressão e metade em fluxo contínuo - grupo-controle); com solução de albumina eqüina e SF (apenas em fluxo contínuo - grupo experimental). Avaliaram-se peso, exame físic...

  2. Atomic fountain and applications

    International Nuclear Information System (INIS)

    Rawat, H.S.

    2000-01-01

    An overview of the development of working of MOT along with the basic principle of laser atom cooling and trapping is given. A technique to separate the cooled and trapped atoms from the MOT using atomic fountain technique will also be covered. The widely used technique for atomic fountain is, first to cool and trap the neutral atoms in MOT and then launch them in the vertical direction, using moving molasses technique. Using 133 Cs atomic fountain clock, time improvement of 2 to 3 order of magnitude over a conventional 133 Cs atomic clock has been observed

  3. Interferometry with atoms

    International Nuclear Information System (INIS)

    Helmcke, J.; Riehle, F.; Witte, A.; Kisters, T.

    1992-01-01

    Physics and experimental results of atom interferometry are reviewed and several realizations of atom interferometers are summarized. As a typical example of an atom interferometer utilizing the internal degrees of freedom of the atom, we discuss the separated field excitation of a calcium atomic beam using four traveling laser fields and demonstrate the Sagnac effect in a rotating interferometer. The sensitivity of this interferometer can be largely increased by use of slow atoms with narrow velocity distribution. We therefore furthermore report on the preparation of a laser cooled and deflected calcium atomic beam. (orig.)

  4. Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 ??sing an Asymmetric InA1GaAs/InGaAsP Structure

    Science.gov (United States)

    Vang, T. A.; Davis, L.; Keo, S.; Forouhar, S. F.

    1996-01-01

    Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 ??y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.

  5. Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire

    International Nuclear Information System (INIS)

    Saravanan, S.; John Peter, A.; Lee, Chang Woo

    2014-01-01

    Excitons confined in an InAs 1−x P x /InP (x=0.2) quantum well wire are studied in the presence of magnetic field strength. Numerical calculations are carried out using variational approach within the single band effective mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is investigated in the influence of magnetic field strength taking into account the geometrical confinement effect. The magnetic field induced optical band as a function of wire radius is investigated in the InAs 0.8 P 0.2 /InP quantum well wire. The valence-band anisotropy is included in our theoretical model by employing different hole masses in different spatial directions. The optical gain as a function of incident photon energy is computed in the presence of magnetic field strength. The corresponding 1.55 μm wavelength is achieved for 40 Å InAs 0.8 P 0.2 /InP quantum well wire. We hope that the results could be used for the potential applications in fiber optic communications. -- Highlights: • Magnetic field induced excitons confined in a InAs 1−x P x /InP (x=0.2) quantum well wire are studied. • The compressive strain is included throughout the calculations. • The energy difference of the ground and the first excited state is investigated in the presence of magnetic field strength. • The magnetic field induced optical band with the geometrical confinement is studied. • The optical gain with the photon energy is computed in the presence of magnetic field strength

  6. Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Oswald, Jiří; Pangrác, Jiří; Zíková, Markéta; Kubištová, Jana; Komninou, Ph.; Kioseoglou, J.; Kuldová, Karla; Hulicius, Eduard

    2013-01-01

    Roč. 114, č. 17 (2013), "174305-1"-"174305-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S; GA MŠk 7AMB12GR034; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : quantum dots * metal-organic vapor phase epitaxy * InAs * GaAs * GaAsSb Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  7. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    International Nuclear Information System (INIS)

    Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

    2011-01-01

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

  8. Three-atom clusters

    International Nuclear Information System (INIS)

    Pen'kov, F.M.

    1998-01-01

    The Born-Oppenheimer approximation is used to obtain an equation for the effective interaction in three atoms bound by a single electron. For low binding energies in an 'electron + atom' pair, long-range forces arise between the atoms, leading to bound states when the size of the three-atom cluster is a few tens of angstrom. A system made of alkali-metal atoms is considered as an example

  9. Stable atomic hydrogen: Polarized atomic beam source

    International Nuclear Information System (INIS)

    Niinikoski, T.O.; Penttilae, S.; Rieubland, J.M.; Rijllart, A.

    1984-01-01

    We have carried out experiments with stable atomic hydrogen with a view to possible applications in polarized targets or polarized atomic beam sources. Recent results from the stabilization apparatus are described. The first stable atomic hydrogen beam source based on the microwave extraction method (which is being tested ) is presented. The effect of the stabilized hydrogen gas density on the properties of the source is discussed. (orig.)

  10. Controlling the size of InAs quantum dots on Si1-xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

    International Nuclear Information System (INIS)

    Kawaguchi, Kenichi; Ebe, Hiroji; Ekawa, Mitsuru; Sugama, Akio; Arakawa, Yasuhiko

    2009-01-01

    The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH 3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 x 10 10 cm -2 were obtained.

  11. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

    Science.gov (United States)

    Sharma, Nandlal; Reuter, Dirk

    2017-11-01

    Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

  12. Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

    International Nuclear Information System (INIS)

    Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Pucicki, D.; Tlaczala, M.; Fischer, M.; Marquardt, B.; Forchel, A.

    2007-01-01

    InAs quantum dots (QDs) with GaInNAs barriers grown on (001) GaAs substrate by molecular beam epitaxy have been studied by contactless electroreflectance (CER) and photoluminescence (PL) spectroscopies. It has been observed that the overgrowth of self-organized InAs QDs with GaInNAs layers effectively tunes the QD emission to the 1.3 μm spectral region. In case of PL spectra only one peak related to QD emission has been observed. In the case of CER spectra, in addition to a CER feature corresponding to the QD ground state, a rich spectrum of CER resonances related to optical transitions in InAs/GaInNAs/GaAs QW has been observed. It has been concluded that the application of GaInNAs instead InGaAs leads to better control of emission wavelength from InAs QDs since strains in GaInNAs can be tuned from compressive to tensile. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study

    International Nuclear Information System (INIS)

    Song, H. Z.; Usuki, T.; Nakata, Y.; Yokoyama, N.; Sasakura, H.; Muto, S.

    2006-01-01

    InAs/GaAs quantum dots (QD's) are formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness for the transition from two- (2D) to three-dimensional (3D) growth mode. Reflection high energy electron diffraction is used to monitor the QD formation. Based on a mean-field theory [Phys. Rev. Lett. 79, 897 (1997)], the time evolution of total QD's volume, first increasing and finally saturating, is well explained by precursors forming during wetting layer growth and converting into nucleated QD's after growth stop. Both the saturation QD's volume and the QD nucleation rate depend exponentially on the InAs coverage. These behaviors and their temperature and InAs growth rate dependences are essentially understandable in the frame of the mean-field theory. Similar analysis to conventional QD growth suggests that the often observed significant mass transport from wetting layer to QD's can be ascribed to the precursors existing before 2D-3D growth mode transition

  14. Improvement of the optical quality of site-controlled InAs quantum dots by a double stack growth technique in wet-chemically etched holes

    Energy Technology Data Exchange (ETDEWEB)

    Pfau, Tino Johannes; Gushterov, Aleksander; Reithmaier, Johann-Peter [Technische Physik, INA, Universitaet Kassel (Germany); Cestier, Isabelle; Eisenstein, Gadi [Electrical Engineering Dept., Technion, Haifa (Israel); Linder, Evgany; Gershoni, David [Solid State Institute and Physics Dept., Technion, Haifa (Israel)

    2010-07-01

    The optimization of the wet-chemically etching of holes and a special MBE growth stack technique allows enlarging the site-control of low density InAs QDs on GaAs substrates up to a buffer layer thickness of 55 nm. The strain of InAs QDs, grown in the etched holes, reduces the hole closing, so that a pre-patterned surface is conserved for the second QD layer. The distance of 50 nm GaAs between the two QD layers exceeds drastically the maximum vertical alignment based on pure strain coupling (20 nm). Compared to stacks with several QD layers, this method avoids electronic coupling between the different QD layers and reduces the problems to distinguish the dots of different layers optically. Confocal microphotoluminescence reveals a significant diminution of the low temperature photoluminescence linewidth of the second InAs QD layer to an average value of 505{+-}53 {mu}eV and a minimum width of 460 {mu}eV compared to 2 to 4 meV for QDs grown on thin buffer layers. The increase of the buffer layer thickness decreases the influence of the surface defects caused by prepatterning.

  15. Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

    International Nuclear Information System (INIS)

    Zhao, Z.M.; Hul'ko, O.; Kim, H.J.; Liu, J.; Shi, B.; Xie, Y.H.

    2005-01-01

    InAs self-assembled quantum dots (QDs) were grown on Si (001) substrates via molecular beam epitaxy. The size distribution and density of InAs QDs grown under different conditions were studied using plan-view transmission electron microscopy. Dot density was shown to strongly depend on arsenic beam equivalent pressure (BEP) ranging from 2.8x10 -5 to 1.2x10 -3 Pa. In contrast, dot density was nearly independent of substrate temperature from 295 to 410 deg. C under constant arsenic BEP, while broadening of size distribution was observed with increasing temperature. The mechanism accounting for some of the main features of the experimental observations is discussed. Finally, InAs quantum dots with optimized narrow size distribution and high density were grown at low arsenic BEP of 7.2 x10 -5 Pa and low temperature of 250 deg. C followed by annealing at arsenic BEP of 1.9 x10 -4 Pa and temperature of 410 deg. C

  16. Molecular engineering with artificial atoms: designing a material platform for scalable quantum spintronics and photonics

    Science.gov (United States)

    Doty, Matthew F.; Ma, Xiangyu; Zide, Joshua M. O.; Bryant, Garnett W.

    2017-09-01

    Self-assembled InAs Quantum Dots (QDs) are often called "artificial atoms" and have long been of interest as components of quantum photonic and spintronic devices. Although there has been substantial progress in demonstrating optical control of both single spins confined to a single QD and entanglement between two separated QDs, the path toward scalable quantum photonic devices based on spins remains challenging. Quantum Dot Molecules, which consist of two closely-spaced InAs QDs, have unique properties that can be engineered with the solid state analog of molecular engineering in which the composition, size, and location of both the QDs and the intervening barrier are controlled during growth. Moreover, applied electric, magnetic, and optical fields can be used to modulate, in situ, both the spin and optical properties of the molecular states. We describe how the unique photonic properties of engineered Quantum Dot Molecules can be leveraged to overcome long-standing challenges to the creation of scalable quantum devices that manipulate single spins via photonics.

  17. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    catalyzed on either a copper foil or on nickel coated substrates. The graphene must be transferred off of these substrates and then on to the DBR/spacer to...properties of graphene in both the exfoliated single layer graphene (SLG) and few layer graphene (FLG) flakes . Sun et al. make use of bile salts to...semiconductors and dielectrics is the transfer of CVD graphene grown on copper foils. The graphene is grown on thin Cu-foils by CVD using methane and

  18. Advances in atomic spectroscopy

    CERN Document Server

    Sneddon, J

    2000-01-01

    This fifth volume of the successful series Advances in Atomic Spectroscopy continues to discuss and investigate the area of atomic spectroscopy.It begins with a description of the use of various atomic spectroscopic methods and applications of speciation studies in atomic spectroscopy. The emphasis is on combining atomic spectroscopy with gas and liquid chromatography. In chapter two the authors describe new developments in tunable lasers and the impact they will have on atomic spectroscopy. The traditional methods of detection, such as photography and the photomultiplier, and how they are being replaced by new detectors is discussed in chapter three. The very active area of glow discharge atomic spectrometry is presented in chapter four where, after a brief introduction and historical review, the use of glow discharge lamps for atomic spectroscopy and mass spectrometry are discussed. Included in this discussion is geometry and radiofrequency power. The future of this source in atomic spectroscopy is also dis...

  19. Atomic and molecular manipulation

    CERN Document Server

    Mayne, Andrew J

    2011-01-01

    Work with individual atoms and molecules aims to demonstrate that miniaturized electronic, optical, magnetic, and mechanical devices can operate ultimately even at the level of a single atom or molecule. As such, atomic and molecular manipulation has played an emblematic role in the development of the field of nanoscience. New methods based on the use of the scanning tunnelling microscope (STM) have been developed to characterize and manipulate all the degrees of freedom of individual atoms and molecules with an unprecedented precision. In the meantime, new concepts have emerged to design molecules and substrates having specific optical, mechanical and electronic functions, thus opening the way to the fabrication of real nano-machines. Manipulation of individual atoms and molecules has also opened up completely new areas of research and knowledge, raising fundamental questions of "Optics at the atomic scale", "Mechanics at the atomic scale", Electronics at the atomic scale", "Quantum physics at the atomic sca...

  20. Microfabricated Waveguide Atom Traps.

    Energy Technology Data Exchange (ETDEWEB)

    Jau, Yuan-Yu [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    A nanoscale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon-atom interactions . A neutral - atom platform based on this microfabrication technology will be prealigned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading cold atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano-waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.

  1. Progress in atomic spectroscopy

    International Nuclear Information System (INIS)

    Beyer, H.J.; Kleinpoppen, H.

    1984-01-01

    This book presents reviews by leading experts in the field covering areas of research at the forefront of atomic spectroscopy. Topics considered include the k ordering of atomic structure, multiconfiguration Hartree-Fock calculations for complex atoms, new methods in high-resolution laser spectroscopy, resonance ionization spectroscopy (inert atom detection), trapped ion spectroscopy, high-magnetic-field atomic physics, the effects of magnetic and electric fields on highly excited atoms, x rays from superheavy collision systems, recoil ion spectroscopy with heavy ions, investigations of superheavy quasi-atoms via spectroscopy of electron rays and positrons, impact ionization by fast projectiles, and amplitudes and state parameters from ion- and atom-atom excitation processes

  2. Atomic Fisher information versus atomic number

    International Nuclear Information System (INIS)

    Nagy, A.; Sen, K.D.

    2006-01-01

    It is shown that the Thomas-Fermi Fisher information is negative. A slightly more sophisticated model proposed by Gaspar provides a qualitatively correct expression for the Fisher information: Gaspar's Fisher information is proportional to the two-third power of the atomic number. Accurate numerical calculations show an almost linear dependence on the atomic number

  3. Role of Bruton's tyrosine kinase (BTK) in growth and metastasis of INA6 myeloma cells

    International Nuclear Information System (INIS)

    Bam, R; Venkateshaiah, S U; Khan, S; Ling, W; Randal, S S; Li, X; Zhang, Q; Rhee, F van; Barlogie, B; Epstein, J; Yaccoby, S

    2014-01-01

    Bruton's tyrosine kinase (BTK) and the chemokine receptor CXCR4 are linked in various hematologic malignancies. The aim of the study was to understand the role of BTK in myeloma cell growth and metastasis using the stably BTK knockdown luciferase-expressing INA6 myeloma line. BTK knockdown had reduced adhesion to stroma and migration of myeloma cells toward stromal cell-derived factor-1. BTK knockdown had no effect on short-term in vitro growth of myeloma cells, although clonogenicity was inhibited and myeloma cell growth was promoted in coculture with osteoclasts. In severe combined immunodeficient-rab mice with contralaterally implanted pieces of bones, BTK knockdown in myeloma cells promoted their proliferation and growth in the primary bone but suppressed metastasis to the contralateral bone. BTK knockdown myeloma cells had altered the expression of genes associated with adhesion and proliferation and increased mammalian target of rapamycin signaling. In 176 paired clinical samples, BTK and CXCR4 expression was lower in myeloma cells purified from a focal lesion than from a random site. BTK expression in random-site samples was correlated with proportions of myeloma cells expressing cell surface CXCR4. Our findings highlight intratumoral heterogeneity of myeloma cells in the bone marrow microenvironment and suggest that BTK is involved in determining proliferative, quiescent or metastatic phenotypes of myeloma cells

  4. Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire.

    Science.gov (United States)

    Wang, Ji-Yin; Huang, Shaoyun; Huang, Guang-Yao; Pan, Dong; Zhao, Jianhua; Xu, H Q

    2017-07-12

    A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anticrossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point at which all three QDs are on resonance with the Fermi level of the reservoirs can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and superexchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states.

  5. Study of the transport phenomena in III-V materials by the Monte Carlo method: application to INAS

    International Nuclear Information System (INIS)

    Bouazza, B.; Amer, L.; Guen-Bouazza, A.; Sayeh, C.; Chabanne-Sari, N.E.; Gontrand, C.

    2004-01-01

    Full text.The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Other methods based on modeling are actually successfully used to solve this equation. This Monte Carlo method is among of the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. It is therefore an iterative process made up from a whole coasting flights stopped by acoustics interactions, polar and non polar optics, piezoelectric, inter-valley, impurity, ionization and surface. By applying this method to the III-V material: InAs. We can describe the behavior of the carriers from dynamic and energetic point of view (variation speed according to the field). The simulation is applied, taking into account variation of the carriers according to time in the non stationary mode, and the effect of temperature, and measurements doping. Results obtained are shown to be comparable to those of the theory

  6. Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

    Science.gov (United States)

    Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

    2016-11-01

    We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

  7. Atomic-fluorescence spectrophotometry

    International Nuclear Information System (INIS)

    Bakhturova, N.F.; Yudelevich, I.G.

    1975-01-01

    Atomic-fluorescence spectrophotometry, a comparatively new method for the analysis of trace quantities, has developed rapidly in the past ten years. Theoretical and experimental studies by many workers have shown that atomic-fluorescence spectrophotometry (AFS) is capable of achieving a better limit than atomic absorption for a large number of elements. The present review examines briefly the principles of atomic-fluorescence spectrophotometry and the types of fluorescent transition. The excitation sources, flame and nonflame atomizers, used in AFS are described. The limits of detection achieved up to the present, using flame and nonflame methods of atomization are given

  8. Elemental composition of 'normal' and Alzheimer brain tissue by INA and PIXE analyses

    International Nuclear Information System (INIS)

    Stedman, J.D.; Spyrou, N.M.

    1997-01-01

    Instrumental methods based on the nuclear and atomic properties of the elements have been used for many years to determine elemental concentrations in a variety of materials for biomedical, industrial and environmental applications. These methods offer high sensitivity for accurate trace element measurements, suffer few interfering or competing effects. Present no blank problems and are convenient for both research and routine analyses. The present article describes the use of two trace element techniques. Firstly the use of activation of stable nuclei irradiated by neutrons in the core of a low power research reactor as a means of detection of elements through the resulting gamma-rays emitted. Secondly, the observations of the interactions of energetic ion beams with the material in order to identify elemental species. Over recent years there has been some interest in determining the elemental composition of 'normal' and Alzheimer affected brain tissue, however literature findings are inconsistent. Possible reasons for discrepancies need to be identified for further progress to be made. Here, post-mortem tissue samples, provided by the Alzheimer's Disease Brain Bank, Institute of Psychiatry, London, were taken from the frontal, occipital, parietal and temporal lobes of both hemispheres of brains from 13 'normal' and 19 Alzheimer subjects. The elemental composition of the samples was determined using the analytical techniques of INAA (instrumental neutron activation analysis), RBS (Rutherford back-scattering) and PIXE (particle induced x-ray emission). The principal findings are summarised here. (author)

  9. A Single Atom Antenna

    International Nuclear Information System (INIS)

    Trinter, Florian; Williams, Joshua B; Weller, Miriam; Waitz, Markus; Pitzer, Martin; Voigtsberger, Jörg; Schober, Carl; Kastirke, Gregor; Müller, Christian; Goihl, Christoph; Burzynski, Phillip; Wiegandt, Florian; Wallauer, Robert; Kalinin, Anton; Schmidt, Lothar Ph H; Schöffler, Markus S; Jahnke, Till; Dörner, Reinhard; Chiang, Ying-Chih; Gokhberg, Kirill

    2015-01-01

    Here we demonstrate the smallest possible implementation of an antenna-receiver complex which consists of a single (helium) atom acting as the antenna and a second (neon) atom acting as a receiver. (paper)

  10. Atom chips: mesoscopic physics with cold atoms

    International Nuclear Information System (INIS)

    Krueger, P.; Wildermuth, S.; Hofferberth, S.; Haller, E.; GAllego Garcia, D.; Schmiedmayer, J.

    2005-01-01

    Full text: Cold neutral atoms can be controlled and manipulated in microscopic potentials near surfaces of atom chips. These integrated micro-devices combine the known techniques of atom optics with the capabilities of well established micro- and nanofabrication technology. In analogy to electronic microchips and integrated fiber optics, the concept of atom chips is suitable to explore the domain of mesoscopic physics with matter waves. We use current and charge carrying structures to form complex potentials with high spatial resolution only microns from the surface. In particular, atoms can be confined to an essentially one-dimensional motion. In this talk, we will give an overview of our experiments studying the manipulation of both thermal atoms and BECs on atom chips. First experiments in the quasi one-dimensional regime will be presented. These experiments profit from strongly reduced residual disorder potentials caused by imperfections of the chip fabrication with respect to previously published experiments. This is due to our purely lithographic fabrication technique that proves to be advantageous over electroplating. We have used one dimensionally confined BECs as an ultra-sensitive probe to characterize these potentials. These smooth potentials allow us to explore various aspects of the physics of degenerate quantum gases in low dimensions. (author)

  11. Quasi-atoms

    International Nuclear Information System (INIS)

    Armbruster, P.

    1976-01-01

    The concept of a quasi-atom is discussed, and several experiments are described in which molecular or quasi-atomic transitions have been observed. X-ray spectra are shown for these experiments in which heavy ion projectiles were incident on various targets and the resultant combined system behaved as a quasi-atom. This rapidly developing field has already given new insight into atomic collision phenomena. (P.J.S.)

  12. Atomic Energy Control Act

    International Nuclear Information System (INIS)

    1970-01-01

    This act provides for the establishment of the Atomic Energy Control Board. The board is responsible for the control and supervision of the development, application and use of atomic energy. The board is also considered necessary to enable Canada to participate effectively in measures of international control of atomic energy

  13. Atomic Spectra Database (ASD)

    Science.gov (United States)

    SRD 78 NIST Atomic Spectra Database (ASD) (Web, free access)   This database provides access and search capability for NIST critically evaluated data on atomic energy levels, wavelengths, and transition probabilities that are reasonably up-to-date. The NIST Atomic Spectroscopy Data Center has carried out these critical compilations.

  14. Time-resolved x-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

    International Nuclear Information System (INIS)

    Kakuda, Naoki; Yamaguchi, Koichi; Kaizu, Toshiyuki; Takahasi, Masamitu; Fujikawa, Seiji

    2010-01-01

    Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI. (author)

  15. Comparison between mini mental state examination (MMSE) and Montreal cognitive assessment Indonesian version (MoCA-Ina) as an early detection of cognitive impairments in post-stroke patients

    Science.gov (United States)

    Lestari, S.; Mistivani, I.; Rumende, C. M.; Kusumaningsih, W.

    2017-08-01

    Mild cognitive impairment (MCI) is defined as cognitive impairment that may never develop into dementia. Cognitive impairment is one long-term complication of a stroke. The Mini Mental State Examination (MMSE), which is commonly used as a screening tool for cognitive impairment, has a low sensitivity to detect cognitive impairment, especially MCI. Alternatively, the Montreal Cognitive Assessment Indonesian version (MoCA-Ina) has been reported to have a higher sensitivity than the MMSE. The aim of this study was to compare the proportion of MCI identified between the MMSE and MoCA-Ina in stroke patients. This was a cross-sectional study of stroke outpatients who attended the Polyclinic Neuromuscular Division, Rehabilitation Department, and Polyclinic Stroke, Neurology Department Cipto Mangunkusumo General Hospital, Jakarta. The proportion of MCI identified using the MMSE was 31.03% compared to 72.41% when using the MoCA-Ina. This difference was statistically significant (Fisher’s exact test, p = 0.033). The proportion of MCI in stroke patients was higher when using the MoCA-Ina compared to the MMSE. The MoCA-Ina should be used as an alternative in the early detection of MCI in stroke patients, especially those undergoing rehabilitation.

  16. Measurement of radioactive isotopes by {gamma} and x rays spectrometry with INa crystals. application to radiochemistry of some fission and activation products; Mesures d'isotopes radioactifs par spectrometrie {gamma} et x a l'aide de cristaux INa. application a la radiochimie de certains produits de fission et d'activation

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P; Boile, G; Simonet, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1965-07-01

    The measurement of an number of atoms N may be obtained by detection of one {gamma} ray emitted if its branching ratio K{sub E} is known (number of E energy {gamma} transitions/number of disintegrations). N = A/{lambda} N{sub {gamma}}{sub E} / (K{sub E} * {lambda}) This measurement is effectuated in well-defined geometry, {gamma} rays emitted by the source are detected by a calibrated NaI crystal which is connected to a photomultiplier delivering electric impulses analysed by a multichannel analyser. Crystals are chosen according to energy, intensity of measured rays and of background. Calibration is established with standard sources or by total absolute efficiency of a definite crystal. Half-life, energy of measured photopeak branching ratio have been determined for these isotopes: Fission products: {sup 95}Zr, {sup 95}Nb, {sup 99}Mo, {sup 103}Ru, {sup 106}Ru, {sup 111}Ag, {sup 115}Cd, {sup 115m}Cd, {sup 132}Te, {sup 129m}Te, {sup 134}Cs, {sup 136}Cs, {sup 137}Cs, {sup 140}Ba, {sup 140}La. Rare earth elements: {sup 91}Y, {sup 141}Ce, {sup 144}Ce, {sup 147}Nd, {sup 156}Eu. Products from reactions (n, {gamma}) (n, 2n): 1{sup 10}Ag, {sup 124}Sb, {sup 239}Np, {sup 237}U, {sup 241}Am. (authors) [French] La mesure du nombre d'atomes N d'un isotope peut s'effectuer sur un rayonnement {gamma} si l'on connait le rapport d'embranchement K{sub E} (nombre de rayonnements {gamma} d'energie E/nombre de desintegrations). N = A/{lambda} N{sub {gamma}}{sub E} / (K{sub E} * {lambda}) La mesure s'effectue en geometrie definie; les rayonnements {gamma} emis par la source sous mylar sont detectes par un cristal INa etalonne en fonction de l'energie, lequel est relie a un photomultiplicateur delivrant des impulsions electriques qui seront analysees par un selecteur multicanaux. La connaissance de la distribution theorique (effet photoelectrique, compton, paires, retrodiffusion, echappement... ) permet de determiner qualitativement si les elements sont purs, et de faire une mesure sur

  17. Atom-atom collision cascades localization

    International Nuclear Information System (INIS)

    Kirsanov, V.V.

    1980-01-01

    The presence of an impurity and thermal vibration influence on the atom-atom collision cascade development is analysed by the computer simulation method (the modificated dynamic model). It is discovered that the relatively low energetic cascades are localized with the temperature increase of an irradiated crystal. On the basis of the given effect the mechanism of splitting of the high energetic cascades into subcascades is proposed. It accounts for two factors: the primary knocked atom energy and the irradiated crystal temperature. Introduction of an impurity also localizes the cascades independently from the impurity atom mass. The cascades localization leads to intensification of the process of annealing in the cascades and reduction of the post-cascade vacancy cluster sizes. (author)

  18. Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

    Science.gov (United States)

    Conti, G.; Nemšák, S.; Kuo, C.-T.; Gehlmann, M.; Conlon, C.; Keqi, A.; Rattanachata, A.; Karslıoǧlu, O.; Mueller, J.; Sethian, J.; Bluhm, H.; Rault, J. E.; Rueff, J. P.; Fang, H.; Javey, A.; Fadley, C. S.

    2018-05-01

    Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO4 and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO2/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

  19. Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

    Directory of Open Access Journals (Sweden)

    G. Conti

    2018-05-01

    Full Text Available Free-standing nanoribbons of InAs quantum membranes (QMs transferred onto a (Si/Mo multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS and by standing-wave HXPS (SW-HXPS. Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM and its interfaces were quantitatively derived with ångström precision. We determined that (i the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM; (ii the top interface between the air-side InAsO4 and the InAs(QM is not sharp, indicating that interdiffusion occurs between these two layers; (iii the bottom interface between the InAs(QM and the native oxide SiO2 on top of the (Si/Mo substrate is abrupt. In addition, the valence band offset (VBO between the InAs(QM and the SiO2/(Si/Mo substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

  20. [Exposure to benzene and hematologic changes in workers at the Ina-Oki Drnisplast factory in Drnis].

    Science.gov (United States)

    Mikulandra, O; Cala, D; Marković, V; Zorić, A

    1993-12-01

    In the summer of 1984 workers in the "INA-OKI Drnisplast" factory frequently complained about headaches, weight loss and irregular menstrual cycles. According to the factory engineers that might have been due to an altered composition of the paints and glues that were used in the manufacturing process that year. Those had been found to lack specifications of chemical composition. Experts from the Institute for the Safety at Work from Zagreb were called in to perform measurements of organic solvents content in the workroom air. Benzene concentrations were found to be up to five times higher than the maximum permissible levels, those of toluene up to three times and of cyclohexane up to ten times higher. The polluted part of the factory was closed down, changes were introduced into the working process (use of paints was stopped, only glues without benzene content were allowed and proper ventilation was installed) and all the workers, twenty in all, received medical treatment. After three months the working process was resumed. In 1989 all the twenty workers underwent a control medical examination. All showed signs of recovery, both objective and subjective. Their blood tests values were within normal range. All the workers continued working, save one who retired in 1988 upon recommendation of a disability commission. The cause of disablement was occupational disease--benzene poisoning. On the basis of this experience emphasis is placed on the importance, in working with benzene, of complying with the Legislation on working capacity assessment for jobs requiring special working conditions and with the Safety at work act.

  1. Emission and elastic strain in InGaAs/GaAs quantum wells with embedded InAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Vega-Macotela, L.G.; Polupan, G. [ESIME - Instituto Politecnico Nacional, Mexico D.F. 07738 (Mexico); Shcherbyna, Ye. [National Technical University-' ' KPI' ' , Kiev 03057 (Ukraine)

    2012-07-15

    Photoluminescence (PL) spectra have been studied in the symmetric GaAs/In{sub 0.15}Ga{sub 0.85}As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), grown at different temperatures from the range 470-535 C. The increase of QD growth temperature is accompanied by decreasing the QD surface density and the enlargement of QD lateral diameters. Simultaneously the variation of the PL intensity and PL peak positions none monotonously have been detected. To understand the reason of the variation of PL intensity and peak positions the PL temperature dependences and the X-ray diffraction (XRD) at low angles (1.75-1.92 ) have been studied. The fitting procedure is applied to analysis the temperature shift of PL peak positions. Fitting has been done on the base of empirical expression for the band gap shrinkage that uses the Einstein temperature parameter. The character non monotonous for the Ga/In inter diffusion versus QD growth temperatures has been revealed. The XRD study has detected the high intensity peaks that corresponds to the diffraction of X-ray beam from the (311) crystal planes in GaAs QWs. The position of XRD peaks in the structures with QD grown at 490-510 C is very close to the angles related to the diffraction from (311) planes in the bulk GaAs. In QD structures with QD grown at 470 and 525-535 C the (311) XRD peaks shift to the higher diffraction angles that testifies on the essential compressive strains in these structures. The reason of the variation non monotonously of elastic strain versus QD densities has been discussed (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. ANALYSIS OF INA-CBG’S FARE AND GOVERNOR REGULATION FAREON SURGERY AT INPATIENT ROOM OF UNDATA REGIONAL PUBLIC HOSPITAL IN PALU

    Directory of Open Access Journals (Sweden)

    Muh. Ryman Napirah

    2016-03-01

    Full Text Available Aim: In order to determine the fares of surgery, there are two types of fares used by hospitals namely Indonesian Case Based Groups fare (INA-CBG s and Governor Regulation fare. This study aimed to identify and analyze both types of fares in orthopedic surgery, general, eyes, midwifery, mouth, ENT, urology at inpatient room of Undata Regional Public Hospital in Palu during year 2014. Method: This was a quantitative study with descriptive approach with 46 cases as the number of surgery. Data were collected through observation and analysis of secondary data were gotten from medical record, pharmaceutical installation of IBS/IDR, inpatient therapy room (Matahari, Aster, and Teratai pavilions and cashier of inpatient room in form of cost details and patient data from January to December 2014. Data Presentation was formed on tables, where the existing fares are grouped based on the component of each cost then summed and calculated the deviation between the two types of fares. Results: This study indicated that orthopedic surgery with deviation of Rp 11.311.365, general surgery with deviation of Rp 6.438.409, eyes surgery with deviation of Rp 45.173.741, midwifery surgery with deviation of Rp 6.645.765, oral surgery with deviation of Rp 6.105.659, and urological surgery with deviation of Rp. 3.809.959. Conclusion: It can be concluded that INA-CBG's fares are higher than Governor Regulation fares except orthopedic surgery, where the Governor Regulation faresare higher than INA-CBG’s fares.

  3. InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

    International Nuclear Information System (INIS)

    Cao, Meng; Wu, Hui-Zhen; Lao, Yan-Feng; Cao, Chun-Fang; Liu, Cheng

    2009-01-01

    The intermixing effect on InAs 0.45 P 0.55 /InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.

  4. GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-01-01

    Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. ISSN 2053-1591 R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠk(CZ) LO1603 Institutional support: RVO:68378271 Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.068, year: 2016

  5. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Dhifallah, I., E-mail: ines.dhifallah@gmail.co [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Daoudi, M.; Bardaoui, A. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Eljani, B. [Unite de recherche sur les Hetero-Epitaxie et Applications, Faculte des Sciences de Monastir (Tunisia); Ouerghi, A. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 46a0, Marcoussis (France); Chtourou, R. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia)

    2011-05-15

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E{sub e-hh}) and electron-light-hole (E{sub e-lh}) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-{delta}-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-{delta}-doped samples, we have determined the internal electric field introduced by ionized Si-{delta}-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: {yields} Studying HEMTs structures with different silicon doping content. {yields} An increase of the electric field in the InAs layer with increasing Si content. {yields} The interband energy transitions in the HEMTs structures have been obtained from PR. {yields} Experimental and theoretical values of transitions energies were in good agreement.

  6. Structural Disorder in Colloidal InAs and CdSe Nanocrystals Observed by X-Ray Absorption Near-Edge Spectroscopy

    International Nuclear Information System (INIS)

    Hamad, K.S.; Hamad, K.S.; Roth, R.; Roth, R.; Rockenberger, J.; Rockenberger, J.; Alivisatos, A.P.; Alivisatos, A.P.; Buuren, T. van

    1999-01-01

    We report the observation of size dependent structural disorder by x-ray absorption near-edge spectroscopy (XANES) in InAs and CdSe nanocrystals 17 - 80 Angstrom in diameter. XANES of the In and Cd M 4,5 edges yields features that are sharp for the bulk solid but broaden considerably as the size of the particle decreases. FEFF7 multiple-scattering simulations reproduce the size dependent broadening of the spectra if a bulklike surface reconstruction of a spherical nanocrystal model is included. This illustrates that XANES is sensitive to the structure of the entire nanocrystal including the surface. copyright 1999 The American Physical Society

  7. Cave bear (Ursus spelaeus Rosenmüller & Heinroth males' den from Velika Pećina in Duboka Near Kučevo, Eastern Serbia

    Directory of Open Access Journals (Sweden)

    Dimitrijević Vesna M.

    2002-01-01

    Full Text Available More a 100 years after the first research in the cave Velika pećina in Duboka near Kučevo cave bear remains were discovered in a small chamber cut off from the passable channels by a 7 m high slope. A whole skull, bones of a forearm in articulation, and other skeleton parts were laying on the cave floor encrusted in travertine cover and in some places overgrown by stalagmites. Bones belonged to adult males, which found there the shelter to hibernate, in a short epizode that ended by closing the channels that once linked this part of the cave to a surface.

  8. Influência da heparina sódica na ocorrência de laminite eqüina induzida por sobrecarga de carboidratos

    OpenAIRE

    Martins Filho,L.P.; Fagliari,J.J.; Moraes,J.R.E.; Sampaio,R.C.; Oliveira,J.A.; Lacerda Neto,J.C.

    2008-01-01

    Avaliou-se a eficiência da infusão intravenosa de heparina sódica (100UI/kg/8h, a partir de 24h após o fornecimento de carboidrato, até completar 48h) no controle da laminite eqüina experimentalmente induzida por sobrecarga de carboidrato (17,6g de amido de milho/kg de peso corpóreo). Foram utilizados 15 eqüinos adultos, distribuídos em três grupos experimentais: GI (grupo-controle); GII (grupo laminite) e GIII (grupo laminite+heparina). Posteriormente ao fornecimento de carboidrato, os anima...

  9. Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot

    International Nuclear Information System (INIS)

    Khanin, Yu. N.; Vdovin, E. E.; Eaves, L.; Larkin, I. A.; Patane, A.; Makarovskii, O. N.; Henini, M.

    2007-01-01

    The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter

  10. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    International Nuclear Information System (INIS)

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Atomic collisions research with excited atomic species

    International Nuclear Information System (INIS)

    Hoogerland, M.D.; Gulley, R.J.; Colla, M.; Lu, W.; Milic, D.; Baldwin, K.G.H.; Buckman, S.J.

    1999-01-01

    Measurements and calculations of fundamental atomic collision and spectroscopic properties such as collision cross sections, reaction rates, transition probabilities etc. underpin the understanding and operation of many plasma and gas-discharge-based devices and phenomena, for example plasma processing and deposition. In almost all cases the complex series of reactions which sustains the discharge or plasma, or produces the reactive species of interest, has a precursor electron impact excitation, attachment, dissociation or ionisation event. These processes have been extensively studied in a wide range of atomic and molecular species and an impressive data base of collision cross sections and reaction rates now exists. However, most of these measurements are for collisions with stable atomic or molecular species which are initially in their ground electronic state. Relatively little information is available for scattering from excited states or for scattering from unstable molecular radicals. Examples of such species would be metastable excited rare gases, which are often used as buffer gases, or CF 2 radicals formed by electron impact dissociation in a CF 4 plasma processing discharge. We are interested in developing experimental techniques which will enable the quantitative study of such exotic atomic and molecular species. In this talk I would like to outline one such facility which is being used for studies of collisions with metastable He(2 3 S) atoms

  12. Atoms - molecules - nuclei. Vol. 1

    International Nuclear Information System (INIS)

    Otter, G.; Honecker, R.

    1993-01-01

    This first volume covers the following topics: Wave-particle dualism, classical atomic physics; the Schroedinger equation, angular momentum in quantum physics, one-electron atoms and many-electron atoms with atomic structure, atomic spectra, exotic atoms, influence of electric and magnetic fields

  13. Atomic and molecular sciences

    International Nuclear Information System (INIS)

    Lane, N.F.

    1989-01-01

    The theoretical atomic and molecular physics program at Rice University addresses basic questions about the collision dynamics of electrons, atoms, ions and molecules, emphasizing processes related to possible new energy technologies and other applications. The program focuses on inelastic collision processes that are important in understanding energy and ionization balance in disturbed gases and plasmas. Emphasis is placed on systems and processes where some experimental information is available or where theoretical results may be expected to stimulate new measurements. Examples of current projects include: excitation and charge-transfer processes; orientation and alignment of excited states following collisions; Rydberg atom collisions with atoms and molecules; Penning ionization and ion-pair formation in atom-atom collisions; electron-impact ionization in dense, high-temperature plasmas; electron-molecule collisions; and related topics

  14. Modern atomic physics

    CERN Document Server

    Natarajan, Vasant

    2015-01-01

    Much of our understanding of physics in the last 30-plus years has come from research on atoms, photons, and their interactions. Collecting information previously scattered throughout the literature, Modern Atomic Physics provides students with one unified guide to contemporary developments in the field. After reviewing metrology and preliminary material, the text explains core areas of atomic physics. Important topics discussed include the spontaneous emission of radiation, stimulated transitions and the properties of gas, the physics and applications of resonance fluorescence, coherence, cooling and trapping of charged and neutral particles, and atomic beam magnetic resonance experiments. Covering standards, a different way of looking at a photon, stimulated radiation, and frequency combs, the appendices avoid jargon and use historical notes and personal anecdotes to make the topics accessible to non-atomic physics students. Written by a leader in atomic and optical physics, this text gives a state-of-the...

  15. Metal atom oxidation laser

    International Nuclear Information System (INIS)

    Jensen, R.J.; Rice, W.W.; Beattie, W.H.

    1975-01-01

    A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides

  16. Advances in atomic spectroscopy

    CERN Document Server

    Sneddon, J

    1997-01-01

    This series describes selected advances in the area of atomic spectroscopy. It is primarily intended for the reader who has a background in atmoic spectroscopy; suitable to the novice and expert. Although a widely used and accepted method for metal and non-metal analysis in a variety of complex samples, Advances in Atomic Spectroscopy covers a wide range of materials. Each Chapter will completely cover an area of atomic spectroscopy where rapid development has occurred.

  17. Economical Atomic Layer Deposition

    Science.gov (United States)

    Wyman, Richard; Davis, Robert; Linford, Matthew

    2010-10-01

    Atomic Layer Deposition is a self limiting deposition process that can produce films at a user specified height. At BYU we have designed a low cost and automated atomic layer deposition system. We have used the system to deposit silicon dioxide at room temperature using silicon tetrachloride and tetramethyl orthosilicate. Basics of atomic layer deposition, the system set up, automation techniques and our system's characterization are discussed.

  18. Atomic physics made clear

    International Nuclear Information System (INIS)

    Meinhold, H.

    1980-01-01

    This book is a popular introduction into the foundations of atomic physics und quantum mechanics. Starting from some phenomenological concepts Bohr's model and the construction of the periodic system regarding the shell structure of atoms are introduced. In this framework the selection rules and magnetic moments of atomic electrons are considered. Finally the wave-particle dualism is considered. In the appendix some mathematical methods are described which are useful for a deeper penetration into the considered ideas. (HSI)

  19. Engaging the Terminal: Promoting Halogen Bonding Interactions with Uranyl Oxo Atoms.

    Science.gov (United States)

    Carter, Korey P; Kalaj, Mark; Surbella, Robert G; Ducati, Lucas C; Autschbach, Jochen; Cahill, Christopher L

    2017-11-02

    Engaging the nominally terminal oxo atoms of the linear uranyl (UO 2 2+ ) cation in non-covalent interactions represents both a significant challenge and opportunity within the field of actinide hybrid materials. An approach has been developed for promoting oxo atom participation in a range of non-covalent interactions, through judicious choice of electron donating equatorial ligands and appropriately polarizable halogen-donor atoms. As such, a family of uranyl hybrid materials was generated based on a combination of 2,5-dihalobenzoic acid and aromatic, chelating N-donor ligands. Delineation of criteria for oxo participation in halogen bonding interactions has been achieved by preparing materials containing 2,5-dichloro- (25diClBA) and 2,5-dibromobenzoic acid (25diBrBA) coupled with 2,2'-bipyridine (bipy) (1 and 2), 1,10-phenanthroline (phen) (3-5), 2,2':6',2''-terpyridine (terpy) (6-8), or 4'-chloro-2,2':6',2''-terpyridine (Cl-terpy) (9-10), which have been characterized through single crystal X-ray diffraction, Raman, Infrared (IR), and luminescence spectroscopy, as well as through density functional calculations of electrostatic potentials. Looking comprehensively, these results are compared with recently published analogues featuring 2,5-diiodobenzoic acid which indicate that although inclusion of a capping ligand in the uranyl first coordination sphere is important, it is the polarizability of the selected halogen atom that ultimately drives halogen bonding interactions with the uranyl oxo atoms. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Deeply bound pionic atom

    International Nuclear Information System (INIS)

    Toki, Hiroshi; Yamazaki, Toshimitsu

    1989-01-01

    The standard method of pionic atom formation does not produce deeply bound pionic atoms. A study is made on the properties of deeply bound pionic atom states by using the standard pion-nucleus optical potential. Another study is made to estimate the cross sections of the formation of ls pionic atom states by various methods. The pion-nucleus optical potential is determined by weakly bound pionic atom states and pion nucleus scattering. Although this potential may not be valid for deeply bound pionic atoms, it should provide some hint on binding energies and level widths of deeply bound states. The width of the ls state comes out to be 0.3 MeV and is well separated from the rest. The charge dependence of the ls state is investigated. The binding energies and the widths increase linearly with Z azbove a Z of 30. The report then discusses various methods to populate deeply bound pionic atoms. In particular, 'pion exchange' reactions are proposed. (n, pπ) reaction is discussed first. The cross section is calculated by assuming the in- and out-going nucleons on-shell and the produced pion in (n1) pionic atom states. Then, (n, dπ - ) cross sections are estimated. (p, 2 Heπ - ) reaction would have cross sections similar to the cross section of (n, dπ - ) reaction. In conclusion, it seems best to do (n, p) experiment on heavy nuclei for deeply bound pionic atom. (Nogami, K.)

  1. Single atom oscillations

    International Nuclear Information System (INIS)

    Wiorkowski, P.; Walther, H.

    1990-01-01

    Modern methods of laser spectroscopy allow the study of single atoms or ions in an unperturbed environment. This has opened up interesting new experiments, among them the detailed study of radiation-atom coupling. In this paper, the following two experiments dealing with this problem are reviewed: the single-atom maser and the study of the resonance fluorescence of a single stored ion. The simplest and most fundamental system for studying radiation-matter coupling is a single two-level atom interacting with a single mode of an electromagnetic field in a cavity. This problem received a great deal of attention shortly after the maser was invented

  2. Atomic hydrogen reactor

    International Nuclear Information System (INIS)

    Massip de Turville, C.M.D.

    1982-01-01

    Methods are discussed of generating heat in an atomic hydrogen reactor which involve; the production of atomic hydrogen by an electrical discharge, the capture of nascent neutrons from atomic hydrogen in a number of surrounding steel alloy tubes having a high manganese content to produce 56 Mn, the irradiation of atomic hydrogen by the high energy antineutrinos from the beta decay of 56 Mn to yield nascent neutrons, and the removal of the heat generated by the capture of nascent neutrons by 55 Mn and the beta decay of 56 Mn. (U.K.)

  3. Modeling the Syn-Disposition of Nitrogen Donors in Non-Heme Diiron Enzymes. Synthesis, Characterization, and Hydrogen Peroxide Reactivity of Diiron(III) Complexes with the Syn N-Donor Ligand H2BPG2DEV

    Science.gov (United States)

    Friedle, Simone; Kodanko, Jeremy J.; Morys, Anna J.; Hayashi, Takahiro; Moënne-Loccoz, Pierre; Lippard, Stephen J.

    2009-01-01

    In order to model the syn disposition of histidine residues in carboxylate-bridged non-heme diiron enzymes, we prepared a new dinucleating ligand, H2BPG2DEV, that provides this geometric feature. The ligand incorporates biologically relevant carboxylate functionalities, which have not been explored as extensively as nitrogen-only analogs. Three novel oxo-bridged diiron(III) complexes [Fe2(μ-O)(H2O)2-(BPG2DEV)](ClO4)2 (6), [Fe2(μ-O)(μ-O CAriPrO)(BPG2DEV)](ClO4) (7), and [Fe2(μ-O)(μ-CO3)(BPG2DEV)] (8) were prepared. Single crystal X-ray structural characterization confirms that two pyridines are bound syn with respect to the Fe–Fe vector in these compounds. The carbonato-bridged complex 8 forms quantitatively from 6 in a rapid reaction with gaseous CO2 in organic solvents. A common maroon-colored intermediate (λmax = 490 nm; ε = 1500 M−1 cm−1) forms in reactions of 6, 7, or 8 with H2O2 and NEt3 in CH3CN/H2O solutions. Mass spectrometric analyses of this species, formed using 18O-labeled H2O2, indicate the presence of a peroxide ligand bound to the oxo-bridged diiron(III) center. The Mössbauer spectrum at 90 K of the EPR-silent intermediate exhibits a quadrupole doublet with δ. = 0.58 mm/s and ΔEQ = 0.58 mm/s. The isomer shift is typical for a peroxodiiron(III) species, but the quadrupole splitting parameter is unusually small compared to related complexes. These Mössbauer parameters are comparable to those observed for a peroxo intermediate formed in the reaction of reduced toluene/o-xylene monooxygenase hydroxylase (ToMOH) with dioxygen. Resonance Raman studies reveal an unusually low-energy O–O stretching mode in the peroxo intermediate that is consistent with a short diiron distance. Although peroxodiiron(III) intermediates generated from 6, 7, and 8 are poor O-atom transfer catalysts, they display highly efficient catalase activity, with turnover numbers up to 10,000. In contrast to hydrogen peroxide reactions of diiron(III) complexes that lack

  4. Atom dynamics in laser fields

    International Nuclear Information System (INIS)

    Jang, Su; Mi, No Gin

    2004-12-01

    This book introduces coherent dynamics of internal state, spread of atoms wave speed, semiclassical atoms density matrix such as dynamics equation in both still and moving atoms, excitation of atoms in movement by light, dipole radiating power, quantum statistical mechanics by atoms in movement, semiclassical atoms in movement, atoms in movement in the uniform magnetic field including effects of uniform magnetic field, atom cooling using laser such as Doppler cooling, atom traps using laser and mirrors, radiant heat which particles receive, and near field interactions among atoms in laser light.

  5. Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

    Science.gov (United States)

    Chen, Miaoxiang; Kobashi, Kazufumi

    2012-09-01

    Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting biocompatible diazonium salt compound (amine donor) atop InAs QDs structure. Since its interface between the QDs structure and molecular monolayer retains an uncontaminated and non-oxidized condition, the nanosystem is an ideal platform to study the intrinsic properties of charge-carrier transport inside the system. Because of the complexity of the energy-levels in the QDs structure due to the existing surface QDs and DWELLs, selective excitation wavelengths (400, 633, and 885 nm, respectively) with different photo-energies are used to exactly analyze the complete charging mechanism in these QDs. A clear view of charge-carrier transfer inside the nanosystem is revealed by employing photoluminescence technique under selective-wavelength excitations. The present work provides new quantitative evidences for exploiting inorganic QDs applications in complex biological systems.

  6. Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

    Energy Technology Data Exchange (ETDEWEB)

    Chen Miaoxiang [Department of Micro- and Nano technology, Technical University of Denmark, Orsteds Plads, 2800 Kgs. Lyngby (Denmark); Kobashi, Kazufumi [Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2012-09-15

    Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting biocompatible diazonium salt compound (amine donor) atop InAs QDs structure. Since its interface between the QDs structure and molecular monolayer retains an uncontaminated and non-oxidized condition, the nanosystem is an ideal platform to study the intrinsic properties of charge-carrier transport inside the system. Because of the complexity of the energy-levels in the QDs structure due to the existing surface QDs and DWELLs, selective excitation wavelengths (400, 633, and 885 nm, respectively) with different photo-energies are used to exactly analyze the complete charging mechanism in these QDs. A clear view of charge-carrier transfer inside the nanosystem is revealed by employing photoluminescence technique under selective-wavelength excitations. The present work provides new quantitative evidences for exploiting inorganic QDs applications in complex biological systems.

  7. Determination of the burn-up in fuels of the MTR type by means of gamma spectroscopy with crystal of INa(Tl)

    International Nuclear Information System (INIS)

    Kestelman, A.J.

    1988-01-01

    One of the responsibilities of the Laboratory of Analysis by Neutronic Activation of the RA-6 reactor is to determine the burn-up in fuels of the MTR type. In order to gain experience, up to the arrival of the hyperpure Germanium detector (HPGe) to be used in normal operation, preliminary measurements with a crystal of INa(Tl) were made. The fuel elements used are originated in the RA-3 reactor, with a decay superior to the thirteen years. For this reason, the unique visible photoelectric peak is the one of Cs-137, owing to the low resolution of the INa(Tl). After preliminary measurements, the profiles of burn-up, rectified by attenuation, were measured. Once the efficiency of the detector was determined, the calculation of the burn-up was made; for the element No. 144, a value of 21.6 ± 2.9 g was obtained to be compared with the value 21.9 g which was the evaluation made by the operators. (Author) [es

  8. Auger recombination in p-type InAs and in Gasub(x)Insub(1-x)As solid solutions

    International Nuclear Information System (INIS)

    Zotova, N.V.; Yassievich, I.N.

    1977-01-01

    The probability of the Auger recombination in p-type semiconductors, which is accompanied by transition of the second hole into the zone, splitted by spin-orbital interaction, was calculated. The above process is effective when the energy of spin-orbital splitting off Δ is close to the forbidden zone energy Esub(g), which takes place in the case of InAs, GaSb and solid solutions based on these compounds. The calculation is performed for the non-degenerate hole gas at a finite difference of Esub(g) - Δ. By means of the study of radiative recombination in InAs and Gasub(x)Insub(1-x)As solid solutions with small contents of GaAs (0 17 cm -3 . It is found that the quantum yield of radiative recombination increases sharply in Gasub(x)Insub(1-x)As solid solutions with the increase of x, which is associated with the increase of the difference of Esub(g) - Δ; the radiative recombination intensity increases in correspondence with the theoretical calculation made

  9. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  10. Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs(311)B

    International Nuclear Information System (INIS)

    Selcuk, E.; Hamhuis, G.J.; Noetzel, R.

    2009-01-01

    Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-like periodic arrangement are created by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice (SL) templates on planar GaAs (311)B substrates in molecular beam epitaxy. On shallow- and deep-patterned substrates the respectively generated steps and facets guide the self-organization process during SL template formation to create more complex ordering such as periodic stripes, depending on pattern design. Here we demonstrate for patterns such as shallow- and deepetched round holes and deep-etched zigzag mesas that the self-organized periodic arrangement of QD molecules and single QDs is spatially locked to the pattern sidewalls and corners. This extends the concept of guided self-organization to deterministic self-organization. Absolute position control of the QDs is achieved without one-to-one pattern definition. This guarantees the excellent arrangement control of the ordered QD molecules and single QDs with strong photoluminescence emission up to room temperature, which is required for future quantum functional devices. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Atoms stories; Histoire d`atomes

    Energy Technology Data Exchange (ETDEWEB)

    Radvanyi, P; Bordry, M [Centre National de la Recherche Scientifique (CNRS), 75 - Paris (France)

    1988-12-31

    Physicists from different countries told each evening during one learning week, to an audience of young people, some great discoveries in evoking the difficulties and problems to which the researchers were confronted. From Antiquity to a more recent history, it is a succession of atoms stories. (N.C.)

  12. Low energy atom-atom collisions

    International Nuclear Information System (INIS)

    Child, M.S.

    1980-01-01

    The semiclassical theory of atom-atom potential scattering and of low energy inelastic atom-atom scattering is reviewed. Particular attention is given to the origin and interpretation of rainbow structure, diffraction oscillations and exchange oscillations in the potential scattering differential cross-section, and to the glory structure and symmetry oscillations in the integral cross-section. Available methods for direct inversion of the cross-section data to recover the potential are reviewed in some detail. The theory of non-adiabatic transitions is introduced by a short discussion of interaction mechanisms and of diabetic and adiabatic representations. Analytical S matrix elements are presented for two state curve-crossing (Landau-Zener-Stuckelberg), Demkov and Nikitin models. The relation between Stuckelberg oscillations in the S matrix and in the differential cross-section is discussed in terms of interference between trajectories belonging to two different classical deflection functions. The energy dependences of the inelastic integral cross-section for curve-crossing and Demkov type transitions are also discussed. Finally the theory is reviewed in relation to a recent close-coupled study of fine structure transitions in F( 2 P) + Xe( 2 S) scattering

  13. Atoms, Molecules, and Compounds

    CERN Document Server

    Manning, Phillip

    2007-01-01

    Explores the atoms that govern chemical processes. This book shows how the interactions between simple substances such as salt and water are crucial to life on Earth and how those interactions are predestined by the atoms that make up the molecules.

  14. Atomic Energy Control Board

    International Nuclear Information System (INIS)

    Blackman, N.S.; Gummer, W.K.

    1982-02-01

    This paper has been prepared to provide an overview of the responsibilities and activities of the Atomic Energy Control Board. It is designed to address questions that are often asked concerning the establishment of the Atomic Energy Control Board, its enabling legislation, licensing and compliance activities, federal-provincial relationships, international obligations, and communications with the public

  15. mu. -nucleon atoms

    Energy Technology Data Exchange (ETDEWEB)

    Dobretsov, Yu; Dolgoshein, B; Kirillov-Ugryumov, V

    1980-12-01

    The properties and formation are described of ..mu..-nucleon atoms, the Larmor method of muon spin precession is discussed and the experimental confirmation of the existence of ..mu..-nucleon atoms is shown. The prospects of their use are indicated.

  16. μ-nucleon atoms

    International Nuclear Information System (INIS)

    Dobretsov, Yu.; Dolgoshejn, B.; Kirillov-Ugryumov, V.

    1980-01-01

    The properties and formation are described of μ-nucleon atoms, the Larmor method of muon spin precession is discussed and the experimental confirmation of the existence of μ-nucleon atoms is shown. The prospects of their use are indicated. (J.P.)

  17. Atomic Ferris wheel beams

    Science.gov (United States)

    Lembessis, Vasileios E.

    2017-07-01

    We study the generation of atom vortex beams in the case where a Bose-Einstein condensate, released from a trap and moving in free space, is diffracted from a properly tailored light mask with a spiral transverse profile. We show how such a diffraction scheme could lead to the production of an atomic Ferris wheel beam.

  18. Atom lithography of Fe

    NARCIS (Netherlands)

    Sligte, te E.; Smeets, B.; van der Stam, K.M.R.; Herfst, R.W.; Straten, van der P.; Beijerinck, H.C.W.; Leeuwen, van K.A.H.

    2004-01-01

    Direct write atom lithography is a technique in which nearly resonant light is used to pattern an atom beam. Nanostructures are formed when the patterned beam falls onto a substrate. We have applied this lithography scheme to a ferromagnetic element, using a 372 nm laser light standing wave to

  19. Beyond the Atom

    Science.gov (United States)

    Cox, John

    2011-08-01

    1. Introduction - the atom in the seventies; 2. The vacuum tube; 3. The new rays; 4. The new substances; 5. Disintegration; 6. A family tree; 7. Verifications and results; 8. The objective reality of molecules; 9. The new atom; Bibliography; Index.

  20. When Atoms Want

    Science.gov (United States)

    Talanquer, Vicente

    2013-01-01

    Chemistry students and teachers often explain the chemical reactivity of atoms, molecules, and chemical substances in terms of purposes or needs (e.g., atoms want or need to gain, lose, or share electrons in order to become more stable). These teleological explanations seem to have pedagogical value as they help students understand and use…

  1. Atom electron scattering

    International Nuclear Information System (INIS)

    Santoso, B.

    1976-01-01

    Green Lippmann-Schwinger functions operator representations, derivation of perturbation method using Green function and atom electron scattering, are discussed. It is concluded that by using complex coordinate places where resonances occur, can be accurately identified. The resonance can be processed further for practical purposes, for example for the separation of atom. (RUW)

  2. Atomic energy for progress

    International Nuclear Information System (INIS)

    1974-01-01

    The film discusses the functions and activities of the Philippine Atomic Energy Commission. Shown are the applications of atomic energy in research, agriculture, engineering, industry and medicine, as well as the construction of the research reactor and its inauguration by President Marcos

  3. Zeeman atomic absorption spectroscopy

    International Nuclear Information System (INIS)

    Loos-Vollebregt, M.T.C. de.

    1980-01-01

    A new method of background correction in atomic absorption spectroscopy has recently been introduced, based on the Zeeman splitting of spectral lines in a magnetic field. A theoretical analysis of the background correction capability observed in such instruments is presented. A Zeeman atomic absorption spectrometer utilizing a 50 Hz sine wave modulated magnetic field is described. (Auth.)

  4. Isotopes and atomic weights

    International Nuclear Information System (INIS)

    Zhang Qinglian

    1990-01-01

    A review of the chemical and mass spectrometric methods of determining the atomic weights of elements is presented. A, special discussion is devoted to the calibration of the mass spectrometer with highly enriched isotopes. It is illustrated by the recent work on europium. How to choose the candidate element for new atomic weight determination forms the last section of the article

  5. Atomic diffusion in stars

    CERN Document Server

    Michaud, Georges; Richer, Jacques

    2015-01-01

    This book gives an overview of atomic diffusion, a fundamental physical process, as applied to all types of stars, from the main sequence to neutron stars. The superficial abundances of stars as well as their evolution can be significantly affected. The authors show where atomic diffusion plays an essential role and how it can be implemented in modelling.  In Part I, the authors describe the tools that are required to include atomic diffusion in models of stellar interiors and atmospheres. An important role is played by the gradient of partial radiative pressure, or radiative acceleration, which is usually neglected in stellar evolution. In Part II, the authors systematically review the contribution of atomic diffusion to each evolutionary step. The dominant effects of atomic diffusion are accompanied by more subtle effects on a large number of structural properties throughout evolution. One of the goals of this book is to provide the means for the astrophysicist or graduate student to evaluate the importanc...

  6. Theoretical atomic physics

    CERN Document Server

    Friedrich, Harald

    2017-01-01

    This expanded and updated well-established textbook contains an advanced presentation of quantum mechanics adapted to the requirements of modern atomic physics. It includes topics of current interest such as semiclassical theory, chaos, atom optics and Bose-Einstein condensation in atomic gases. In order to facilitate the consolidation of the material covered, various problems are included, together with complete solutions. The emphasis on theory enables the reader to appreciate the fundamental assumptions underlying standard theoretical constructs and to embark on independent research projects. The fourth edition of Theoretical Atomic Physics contains an updated treatment of the sections involving scattering theory and near-threshold phenomena manifest in the behaviour of cold atoms (and molecules). Special attention is given to the quantization of weakly bound states just below the continuum threshold and to low-energy scattering and quantum reflection just above. Particular emphasis is laid on the fundamen...

  7. Antiprotonic-hydrogen atoms

    International Nuclear Information System (INIS)

    Batty, C.J.

    1989-07-01

    Experimental studies of antiprotonic-hydrogen atoms have recently made great progress following the commissioning of the low energy antiproton facility (LEAR) at CERN in 1983. At the same time our understanding of the atomic cascade has increased considerably through measurements of the X-ray spectra. The life history of the p-bar-p atom is considered in some detail, from the initial capture of the antiproton when stopping in hydrogen, through the atomic cascade with the emission of X-rays, to the final antiproton annihilation and production of mesons. The experiments carried out at LEAR are described and the results compared with atomic cascade calculations and predictions of strong interaction effects. (author)

  8. Experimental atomic physics

    International Nuclear Information System (INIS)

    Anon.

    1985-01-01

    The experimental atomic physics program within the physics division is carried out by two groups, whose reports are given in this section. Work of the accelerator atomic physics group is centered around the 6.5-MV EN tandem accelerator; consequently, most of its research is concerned with atomic processes occurring to, or initiated by, few MeV/amu heavy ions. Other activities of this group include higher energy experiments at the Holifield Heavy Ion Research Facility (HHIRF), studies of electron and positron channeling radiation, and collaborative experiments at other institutions. The second experimental group concerns itself with lower energy atomic collision physics in support of the Fusion Energy Program. During the past year, the new Electron Cyclotron Resonance Source has been completed and some of the first data from this facility is presented. In addition to these two activities in experimental atomic physics, other chapters of this report describe progress in theoretical atomic physics, experimental plasma diagnostic development, and atomic data center compilation activities

  9. Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates

    NARCIS (Netherlands)

    Selçuk, E.; Hamhuis, G.J.; Nötzel, R.

    2009-01-01

    Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern sidewalls. Depending on the pattern design, size,

  10. Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

  11. Atomic mass spectrometry

    International Nuclear Information System (INIS)

    Sanz-Medel, A.

    1997-01-01

    The elemental inorganic analysis seems to be dominated today by techniques based on atomic spectrometry. After an evaluation of advantages and limitations of using mass analysers (ion detectors) versus conventional photomultipliers (photon detector) a brief review of the more popular techniques of the emerging Atomic Mass spectrometry is carried out. Their huge potential for inorganic trace analysis is such that in the future we could well witness how this end of the century and millennium marked the fall of the photons empire in Analytical Atomic Spectrometry. (Author)

  12. Physics of the atom

    CERN Document Server

    Wehr, Russell M; Adair, Thomas W

    1984-01-01

    The fourth edition of Physics of the Atom is designed to meet the modern need for a better understanding of the atomic age. It is an introduction suitable for students with a background in university physics and mathematical competence at the level of calculus. This book is designed to be an extension of the introductory university physics course into the realm of atomic physics. It should give students a proficiency in this field comparable to their proficiency in mechanics, heat, sound, light, and electricity.

  13. Atom trap trace analysis

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Z.-T.; Bailey, K.; Chen, C.-Y.; Du, X.; Li, Y.-M.; O' Connor, T. P.; Young, L.

    2000-05-25

    A new method of ultrasensitive trace-isotope analysis has been developed based upon the technique of laser manipulation of neutral atoms. It has been used to count individual {sup 85}Kr and {sup 81}Kr atoms present in a natural krypton sample with isotopic abundances in the range of 10{sup {minus}11} and 10{sup {minus}13}, respectively. The atom counts are free of contamination from other isotopes, elements,or molecules. The method is applicable to other trace-isotopes that can be efficiently captured with a magneto-optical trap, and has a broad range of potential applications.

  14. Division of atomic physics

    International Nuclear Information System (INIS)

    Kroell, S.

    1994-01-01

    The Division of Atomic Physics, Lund Institute of Technology (LTH), is responsible for the basic physics teaching in all subjects at LTH and for specialized teaching in Optics, Atomic Physics, Atomic and Molecular Spectroscopy and Laser Physics. The Division has research activities in basic and applied optical spectroscopy, to a large extent based on lasers. It is also part of the Physics Department, Lund University, where it forms one of eight divisions. Since the beginning of 1980 the research activities of our division have been centred around the use of lasers. The activities during the period 1991-1992 is described in this progress reports

  15. Atom trap trace analysis

    International Nuclear Information System (INIS)

    Lu, Z.-T.; Bailey, K.; Chen, C.-Y.; Du, X.; Li, Y.-M.; O'Connor, T. P.; Young, L.

    2000-01-01

    A new method of ultrasensitive trace-isotope analysis has been developed based upon the technique of laser manipulation of neutral atoms. It has been used to count individual 85 Kr and 81 Kr atoms present in a natural krypton sample with isotopic abundances in the range of 10 -11 and 10 -13 , respectively. The atom counts are free of contamination from other isotopes, elements,or molecules. The method is applicable to other trace-isotopes that can be efficiently captured with a magneto-optical trap, and has a broad range of potential applications

  16. Section of Atomic Collisions

    International Nuclear Information System (INIS)

    Berenyi, D.; Biri, S.; Gulyas, L.; Juhasz, Z.; Kover, A.; Orban, A.; Palinkas, J.; Papp, T.; Racz, R.; Ricz, S.

    2009-01-01

    The Section of Atomic Collisions is a research unit with extended activity in the field of atomic and molecular physics. Starting from the study of atomic processes at the beamlines of nuclear physics accelerators in the seventies, our research community became one of the centers of fundamental research in Atomki. We also have a strong connection to materials sciences especially along the line of electron and ion spectroscopy methods. Our present activity covers a wide range of topics from atomic collision mechanisms of fundamental interest, to the complex interactions of electrons, ions, photons and antiparticles with atoms, molecules, surfaces, and specific nanostructures. In the last few years, an increasing fraction of our present topics has become relevant for applications, e.g., molecular collision studies for the radiation therapy methods of tumors, or ion-nanostructure interactions for the future construction of small ion-focusing elements. Our section belongs to the Division of Atomic Physics. The other unit of the Division is the Section of Electron Spectroscopy and Materials Sciences. There are traditionally good connections and a strong collaboration between the groups of the two sections in many fields. From the very beginning of our research work in atomic collisions, external collaborations were of vital importance for us. We regularly organize international workshops in the field of fast ion-atom collisions and related small conferences in Debrecen from 1981. Recently, we organized the Conference on Radiation Damage in Biomolecular Systems (RADAM 2008, Debrecen), and coorganized the Conference on Elementary Processes in Atomic Systems (CEPAS 2008, Cluj). We have access to several large scale facilities in Europe within the framework of formal and informal collaborations. The next themes are in this article: Forward electron emission from energetic atomic collisions; Positron-atom collisions; Photon-atom interactions; Interference effects in electron

  17. History of early atomic clocks

    International Nuclear Information System (INIS)

    Ramsey, N.F.

    2005-01-01

    This review of the history of early atomic clocks includes early atomic beam magnetic resonance, methods of separated and successive oscillatory fields, microwave absorption, optical pumping and atomic masers. (author)

  18. Atomic Energy Authority Bill

    International Nuclear Information System (INIS)

    Gray, J.H.N.; Stoddart, D.L.; Sinclair, R.M.; Ezra, D.

    1985-01-01

    The House, in Committee, discussed the following matters in relation to the Atomic Energy Authority Bill; financing; trading; personnel conditions of employment; public relations; organization; research programmes; fuels; energy sources; information dissemination. (U.K.)

  19. Atomic and Molecular Interactions

    International Nuclear Information System (INIS)

    2002-01-01

    The Gordon Research Conference (GRC) on Atomic and Molecular Interactions was held at Roger Williams University, Bristol, RI. Emphasis was placed on current unpublished research and discussion of the future target areas in this field

  20. Zeeman atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Hadeishi, T.; McLaughlin, R.

    1978-08-01

    The design and development of a Zeeman atomic absorption spectrometer for trace element analysis are described. An instruction manual is included which details the operation, adjustment, and maintenance. Specifications and circuit diagrams are given

  1. Optics With Cold Atoms

    National Research Council Canada - National Science Library

    Hau, Lene

    2004-01-01

    .... And to test the novel atom sensor, we have built a moving-molasses magneto-optical trap in a geometry tailor-suited to the nanotube detector geometry, involving construction of a highly stable laser...

  2. Atomic Energy Control Regulations

    International Nuclear Information System (INIS)

    1992-01-01

    This is the consolidated text of the Atomic Energy Control Regulations of 17 March 1960, with amendments to 27 August 1992. The Regulations cover the licensing of nuclear facilities, radiation sources, including uranium mining, radiation protection questions, etc. (NEA)

  3. The atomic conflict

    International Nuclear Information System (INIS)

    Mez, L.

    1981-01-01

    This book provides a general view at the atomic programmes of several countries and makes an attempt to unmask the atomic industrial combines with their interlockings. The governments role is analysed as well as the atomic policy of the parties, union-trades and associations. Then, the anti-atomic movements in those countries, their forms of resistance, the resonance and the alternative proposals are presented. The countries concerned are Australia, the FRG, COMECON, Danmark, the EG, Finland, France, Great Britain, Ireland, Japan, the Netherlands, Norway, Austria, Sweden, Switzerland, Spain and the USA. For the pocket book version, Lutz Mez adds an updating epilogue which continues with the developments until springtime 1981. (orig./HP) [de

  4. Advances in atomic spectroscopy

    CERN Document Server

    Sneddon, J

    1998-01-01

    This volume continues the series'' cutting-edge reviews on developments in this field. Since its invention in the 1920s, electrostatic precipitation has been extensively used in industrial hygiene to remove dust and particulate matter from gases before entering the atmosphere. This combination of electrostatic precipitation is reported upon in the first chapter. Following this, chapter two reviews recent advances in the area of chemical modification in electrothermal atomization. Chapter three consists of a review which deal with advances and uses of electrothermal atomization atomic absorption spectrometry. Flow injection atomic spectroscopy has developed rapidly in recent years and after a general introduction, various aspects of this technique are looked at in chapter four. Finally, in chapter five the use of various spectrometric techniques for the determination of mercury are described.

  5. Atom chip gravimeter

    Science.gov (United States)

    Schubert, Christian; Abend, Sven; Gebbe, Martina; Gersemann, Matthias; Ahlers, Holger; Müntinga, Hauke; Matthias, Jonas; Sahelgozin, Maral; Herr, Waldemar; Lämmerzahl, Claus; Ertmer, Wolfgang; Rasel, Ernst

    2016-04-01

    Atom interferometry has developed into a tool for measuring rotations [1], accelerations [2], and testing fundamental physics [3]. Gravimeters based on laser cooled atoms demonstrated residual uncertainties of few microgal [2,4] and were simplified for field applications [5]. Atomic gravimeters rely on the interference of matter waves which are coherently manipulated by laser light fields. The latter can be interpreted as rulers to which the position of the atoms is compared. At three points in time separated by a free evolution, the light fields are pulsed onto the atoms. First, a coherent superposition of two momentum states is produced, then the momentum is inverted, and finally the two trajectories are recombined. Depending on the acceleration the atoms experienced, the number of atoms detected in the output ports will change. Consequently, the acceleration can be determined from the output signal. The laser cooled atoms with microkelvin temperatures used in state-of-the-art gravimeters impose limits on the accuracy [4]. Therefore, ultra-cold atoms generated by Bose-Einstein condensation and delta-kick collimation [6,7] are expected to be the key for further improvements. These sources suffered from a low flux implying an incompatible noise floor, but a competitive performance was demonstrated recently with atom chips [8]. In the compact and robust setup constructed for operation in the drop tower [6] we demonstrated all steps necessary for an atom chip gravimeter with Bose-Einstein condensates in a ground based operation. We will discuss the principle of operation, the current performance, and the perspectives to supersede the state of the art. The authors thank the QUANTUS cooperation for contributions to the drop tower project in the earlier stages. This work is supported by the German Space Agency (DLR) with funds provided by the Federal Ministry for Economic Affairs and Energy (BMWi) due to an enactment of the German Bundestag under grant numbers DLR 50WM

  6. Atoms at work

    International Nuclear Information System (INIS)

    1982-07-01

    This illustrated booklet discusses the following: atoms; fission of uranium; nuclear power plants; reactor types; plutonium (formation, properties, uses); radioactive waste (fuel cycle, reprocessing, waste management); nuclear fusion; fusion reactors; radiation; radioisotopes and their uses. (U.K.)

  7. Topics in atomic physics

    CERN Document Server

    Burkhardt, Charles E

    2006-01-01

    The study of atomic physics propelled us into the quantum age in the early twentieth century and carried us into the twenty-first century with a wealth of new and, in some cases, unexplained phenomena. Topics in Atomic Physics provides a foundation for students to begin research in modern atomic physics. It can also serve as a reference because it contains material that is not easily located in other sources. A distinguishing feature is the thorough exposition of the quantum mechanical hydrogen atom using both the traditional formulation and an alternative treatment not usually found in textbooks. The alternative treatment exploits the preeminent nature of the pure Coulomb potential and places the Lenz vector operator on an equal footing with other operators corresponding to classically conserved quantities. A number of difficult to find proofs and derivations are included as is development of operator formalism that permits facile solution of the Stark effect in hydrogen. Discussion of the classical hydrogen...

  8. Atomic Interferometry, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Vertical cavity surface emitting lasers (VCSELs) is a new technology which can be used for developing high performance laser components for atom-based sensors...

  9. Atomic bomb cataracts

    International Nuclear Information System (INIS)

    Shiraeda, Kanji

    1992-01-01

    Eye disturbance caused by atomic bomb radiation can be divided into three groups: direct injury immediately after exposure, eye lesions associated with radiation syndrome, and delayed disturbance. The crystalline lens of the eye is the most radiosensitive. Atomic bomb cataract has been investigated in a number of studies. The first section of this chapter discusses radiation cataract in terms of the incidence and characteristics. The second section deals with atomic bomb cataract, which can be diagnosed based on the four criteria: (1) opacity of the crystalline lens, (2) a history of proximal exposure, (3) lack of eye disease complicating cataract, and (4) non-exposure to radiation other than atomic bombing. The prevalence of cataract and severity of opacity are found to correlate with exposure doses and age at the time of exposure. Furthermore, it is found to correlate with distance from the hypocenter, the condition of shielding, epilation, and the presence or absence or degree of radiation syndrome. (N.K.)

  10. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

    2014-07-01

    Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

  11. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad

    2014-07-01

    Density functional theory (DFT) was used to elucidate the mechanism of n-butane hydrogenolysis (into propane, ethane, and methane) on well-defined zirconium hydrides supported on SBA15 coordinated to the surface via N-donor surface pincer ligands: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage. The dihydride A linked via a chelating [N,O] surface ligand was found to be more active than B, linked to the chelating [N,N] surface ligand. Moreover, the dihydride zirconium complexes are also more active than their corresponding monohydrides C-F. The C-C cleavage step occurs preferentially via β-alkyl transfer, which is the rate-limiting step in the alkane hydrogenolysis. The energetics of the comparative pathways over the potential energy surface diagram (PES) reveals the hydrogenolysis of n-butane into propane and ethane. © 2014 American Chemical Society.

  12. Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

    Science.gov (United States)

    Zannier, Valentina; Rossi, Francesca; Dubrovskii, Vladimir G; Ercolani, Daniele; Battiato, Sergio; Sorba, Lucia

    2018-01-10

    The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.

  13. The Atomic Energy Control Board

    International Nuclear Information System (INIS)

    Doern, G.B.

    1976-01-01

    This study describes and assesses the regulatory and administrative processes and procedures of the Atomic Energy Control Board, the AECB. The Atomic Energy Control Act authorized the AECB to control atomic energy materials and equipment in the national interest and to participate in measures for the international control of atomic energy. The AECB is authorized to make regulations to control atomic energy materials and equipment and to make grants in support of atomic energy research. (author)

  14. Energy flux of hot atoms

    International Nuclear Information System (INIS)

    Wotzak, G.P.; Kostin, M.D.

    1976-01-01

    The process in which hot atoms collide with thermal atoms of a gas, transfer kinetic energy to them, and produce additional hot atoms is investigated. A stochastic method is used to obtain numerical results for the spatial and time dependent energy flux of hot atoms in a gas. The results indicate that in hot atom systems a front followed by an intense energy flux of hot atoms may develop

  15. Harnessing the atom

    International Nuclear Information System (INIS)

    1999-01-01

    Splitting the atom has had a major impact on the history of the latter part of the 20th century. This film depicts the many benefits - and also drawbacks - of nuclear technology, and describes how the International Atomic Energy Agency performs its various tasks. It touches on challenges such as the choice between major energy sources, growing concerns about the global climate, and prospects for nuclear arms control and disarmament

  16. Atomic Energy Act 1946

    International Nuclear Information System (INIS)

    1946-01-01

    This Act provides for the development of atomic energy in the United Kingdom and for its control. It details the duties and powers of the competent Minister, in particular his powers to obtain information on and to inspect materials, plant and processes, to control production and use of atomic energy and publication of information thereon. Also specified is the power to search for and work minerals and to acquire property. (NEA) [fr

  17. Hirshfeld atom refinement.

    Science.gov (United States)

    Capelli, Silvia C; Bürgi, Hans-Beat; Dittrich, Birger; Grabowsky, Simon; Jayatilaka, Dylan

    2014-09-01

    Hirshfeld atom refinement (HAR) is a method which determines structural parameters from single-crystal X-ray diffraction data by using an aspherical atom partitioning of tailor-made ab initio quantum mechanical molecular electron densities without any further approximation. Here the original HAR method is extended by implementing an iterative procedure of successive cycles of electron density calculations, Hirshfeld atom scattering factor calculations and structural least-squares refinements, repeated until convergence. The importance of this iterative procedure is illustrated via the example of crystalline ammonia. The new HAR method is then applied to X-ray diffraction data of the dipeptide Gly-l-Ala measured at 12, 50, 100, 150, 220 and 295 K, using Hartree-Fock and BLYP density functional theory electron densities and three different basis sets. All positions and anisotropic displacement parameters (ADPs) are freely refined without constraints or restraints - even those for hydrogen atoms. The results are systematically compared with those from neutron diffraction experiments at the temperatures 12, 50, 150 and 295 K. Although non-hydrogen-atom ADPs differ by up to three combined standard uncertainties (csu's), all other structural parameters agree within less than 2 csu's. Using our best calculations (BLYP/cc-pVTZ, recommended for organic molecules), the accuracy of determining bond lengths involving hydrogen atoms from HAR is better than 0.009 Å for temperatures of 150 K or below; for hydrogen-atom ADPs it is better than 0.006 Å(2) as judged from the mean absolute X-ray minus neutron differences. These results are among the best ever obtained. Remarkably, the precision of determining bond lengths and ADPs for the hydrogen atoms from the HAR procedure is comparable with that from the neutron measurements - an outcome which is obtained with a routinely achievable resolution of the X-ray data of 0.65 Å.

  18. Manipulating atoms with photons

    International Nuclear Information System (INIS)

    Cohen-Tannoudji, C.N.

    1998-01-01

    The article is a translation of the lecture delivered on the occasion of the 1997 Nobel Prize awarding ceremony. The physical mechanisms which allow manipulating of neutral atoms with laser photons are described. A remark is also made concerning several possible applications of ultra-cool atoms and streams of future research. The article is completed by Prof. Cohen-Tannoudji's autobiography. (Z.J.)

  19. Atoms, molecules & elements

    CERN Document Server

    Graybill, George

    2007-01-01

    Young scientists will be thrilled to explore the invisible world of atoms, molecules and elements. Our resource provides ready-to-use information and activities for remedial students using simplified language and vocabulary. Students will label each part of the atom, learn what compounds are, and explore the patterns in the periodic table of elements to find calcium (Ca), chlorine (Cl), and helium (He) through hands-on activities.

  20. Atomic bomb and leukemia

    Energy Technology Data Exchange (ETDEWEB)

    Ichimaru, M; Tomonaga, M; Amenomori, T; Matsuo, T [Nagasaki Univ. (Japan). School of Medicine

    1991-12-01

    Characteristic features of the leukemia among atomic bomb survivors were studied. Dose estimates of atomic bomb radiation were based on T65D, but the new dosimetry system DS86 was used for some analyses. The ratio of a single leukemia type to all leukemias was highest for chronic myelogenous leukemia (CML) in Hiroshima, and the occurrence of CML was thought to be most characteristic to atomic bomb radiation induced leukemia. The threshold of CML occurrence in Hiroshima is likely to be between 0.5{approx}0.09 Gy. However, the threshold of acute leukemia appears to be nearly 1 Gy. In the distribution of acute myeloid leukemia (AML) subtypes by French-American-British classification, there was no M3 case in 1 Gy or more group, although several atypical AML cases of survivors were observed. Although aplastic anemia has not increased as a late effect of the atomic bomb radiation exposure, many atypical leukemia or other myeloproliferative diseases who had been diagnosed as aplastic anemia or its related diseases have been experienced among atomic bomb survivors. Chromosome study was conducted using colony forming cells induced by hemopoietic stem cells of peripheral blood of proximal survivors. Same chromosome aberrations were observed in colony forming cells and peripheral T-cells in several atomic bomb survivors. (author).

  1. On the bosonic atoms

    Science.gov (United States)

    Amusia, M. Ya.; Chernysheva, L. V.

    2018-01-01

    We investigate ground state properties of atoms, in which substitute fermions - electrons by bosons, namely π --mesons. We perform some calculations in the frame of modified Hartree-Fock (HF) equation. The modification takes into account symmetry, instead of anti-symmetry of the pair identical bosons wave function. The modified HF approach thus enhances (doubles) the effect of self-action for the boson case. Therefore, we accordingly modify the HF equations by eliminating the self-action terms "by hand". The contribution of meson-meson and meson-nucleon non-Coulomb interaction is inessential at least for atoms with low and intermediate nuclear charge, which is our main subject. We found that the binding energy of pion negative ions A π - , pion atoms A π , and the number of extra bound pions ΔN π increases with the growth of nuclear charge Z. For e.g. Xe ΔN π = 4. As an example of a simple process with a pion atom, we consider photoionization that differs essentially from that for electron atoms. Namely, it is not monotonic decreasing from the threshold but has instead a prominent maximum above threshold. We study also elastic scattering of pions by pion atoms.

  2. Electron - atom bremsstrahlung

    International Nuclear Information System (INIS)

    Kim, L.

    1986-01-01

    Features of bremsstrahlung radiation from neutral atoms and atoms in hot dense plasmas are studied. Predictions for the distributions of electron-atom bremsstrahlung radiation for both the point-Coulomb potential and screened potentials are obtained using a classical numerical method. Results agree with exact quantum-mechanical partial-wave results for low incident electron energies in both the point-Coulomb and screened potentials. In the screened potential, the asymmetry parameter of a spectrum is reduced from the Coulomb values. The difference increases with decreasing energy and begins to oscillate at very low energies. The scaling properties of bremsstrahlung spectra and energy losses were also studied. It was found that the ratio of the radiative energy loss for positrons to that for electrons obeys a simple scaling law, being expressible fairly accurately as a function only of the quantity T 1 /Z 2 . This scaling is exact in the case of the point-Coulomb potential, both for classical bremsstrahlung and for the nonrelativistic dipole Sommerfeld formula. Bremsstrahlung from atoms in hot dense plasmas were also studied describing the atomic potentials by the temperature-and-density dependent Thomas-Fermi mode. Gaunt factors were obtained with the relativistic partial-wave method for atoms in plasmas of various densities and temperatures

  3. FAO and atomic energy

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1960-07-15

    During the past six years FAO has become more engaged in work concerned with atomic energy. In 1957 it established an Atomic Energy Branch. The new forces and new tools which have become available for use in the fight against poverty, disease and malnutrition can be of the greatest assistance in FAO's work in nearly all phases of the production, storage and distribution of food and other agricultural products. The Organization promotes their use to improve the standards of feeding, clothing and housing throughout the world. Another side of work related to atomic energy is concerned with combating contamination from the use of atomic energy for power production and other purposes. This raises considerable problems for food and agriculture, so that FAO also has a responsibility for assisting Governments in safeguarding their food and food-producing resources from contamination. FAO is essentially concerned with fostering wider knowledge of the many contributions that atomic science can make to agriculture, forestry, fisheries and nutrition. It is also concerned in assisting governments to establish sound programmes for applying atomic science in food and agriculture. One way of spreading such knowledge is through the publication of documents and reports

  4. Atomic clocks for geodesy

    Science.gov (United States)

    Mehlstäubler, Tanja E.; Grosche, Gesine; Lisdat, Christian; Schmidt, Piet O.; Denker, Heiner

    2018-06-01

    We review experimental progress on optical atomic clocks and frequency transfer, and consider the prospects of using these technologies for geodetic measurements. Today, optical atomic frequency standards have reached relative frequency inaccuracies below 10‑17, opening new fields of fundamental and applied research. The dependence of atomic frequencies on the gravitational potential makes atomic clocks ideal candidates for the search for deviations in the predictions of Einstein’s general relativity, tests of modern unifying theories and the development of new gravity field sensors. In this review, we introduce the concepts of optical atomic clocks and present the status of international clock development and comparison. Besides further improvement in stability and accuracy of today’s best clocks, a large effort is put into increasing the reliability and technological readiness for applications outside of specialized laboratories with compact, portable devices. With relative frequency uncertainties of 10‑18, comparisons of optical frequency standards are foreseen to contribute together with satellite and terrestrial data to the precise determination of fundamental height reference systems in geodesy with a resolution at the cm-level. The long-term stability of atomic standards will deliver excellent long-term height references for geodetic measurements and for the modelling and understanding of our Earth.

  5. FAO and atomic energy

    International Nuclear Information System (INIS)

    1960-01-01

    During the past six years FAO has become more engaged in work concerned with atomic energy. In 1957 it established an Atomic Energy Branch. The new forces and new tools which have become available for use in the fight against poverty, disease and malnutrition can be of the greatest assistance in FAO's work in nearly all phases of the production, storage and distribution of food and other agricultural products. The Organization promotes their use to improve the standards of feeding, clothing and housing throughout the world. Another side of work related to atomic energy is concerned with combating contamination from the use of atomic energy for power production and other purposes. This raises considerable problems for food and agriculture, so that FAO also has a responsibility for assisting Governments in safeguarding their food and food-producing resources from contamination. FAO is essentially concerned with fostering wider knowledge of the many contributions that atomic science can make to agriculture, forestry, fisheries and nutrition. It is also concerned in assisting governments to establish sound programmes for applying atomic science in food and agriculture. One way of spreading such knowledge is through the publication of documents and reports

  6. Atomic bomb and leukemia

    International Nuclear Information System (INIS)

    Ichimaru, M.; Tomonaga, M.; Amenomori, T.; Matsuo, T.

    1991-01-01

    Characteristic features of the leukemia among atomic bomb survivors were studied. Dose estimates of atomic bomb radiation were based on T65D, but the new dosimetry system DS86 was used for some analyses. The ratio of a single leukemia type to all leukemias was highest for chronic myelogenous leukemia (CML) in Hiroshima, and the occurrence of CML was thought to be most characteristic to atomic bomb radiation induced leukemia. The threshold of CML occurrence in Hiroshima is likely to be between 0.5∼0.09 Gy. However, the threshold of acute leukemia appears to be nearly 1 Gy. In the distribution of acute myeloid leukemia (AML) subtypes by French-American-British classification, there was no M3 case in 1 Gy or more group, although several atypical AML cases of survivors were observed. Although aplastic anemia has not increased as a late effect of the atomic bomb radiation exposure, many atypical leukemia or other myeloproliferative diseases who had been diagnosed as aplastic anemia or its related diseases have been experienced among atomic bomb survivors. Chromosome study was conducted using colony forming cells induced by hemopoietic stem cells of peripheral blood of proximal survivors. Same chromosome aberrations were observed in colony forming cells and peripheral T-cells in several atomic bomb survivors. (author)

  7. Atomic phenomena in dense plasmas

    International Nuclear Information System (INIS)

    Weisheit, J.C.

    1981-03-01

    The following chapters are included: (1) the plasma environment, (2) perturbations of atomic structure, (3) perturbations of atomic collisions, (4) formation of spectral lines, and (5) dielectronic recombination

  8. Mālama I Ka `Āina, Sustainability: learning from Hawai`i's displaced place and culture-based science standard

    Science.gov (United States)

    Chinn, Pauline W. U.

    2011-03-01

    This response to Mitchell and Mueller's "A philosophical analysis of David Orr's theory of ecological literacy" comments on their critique of Orr's use of the phrase "ecological crisis" and what I perceive as their conflicting views of "crisis." I present my views on ecological crisis informed by standpoint theory and the definition of crisis as turning point. I connect the concept of turning point to tipping point as used in ecology to describe potentially irreversible changes in coupled social-ecological systems. I suggest that sustainable societies may provide models of adaptive learning in which monitoring of ecological phenomena is coupled to human behavior to mitigate threats to sustainability before a crisis/tipping point is reached. Finally, I discuss the Hawai`i State Department of Education's removal of its Indigenous science content standard Mālama I Ka `Āina, Sustainability and its continued use in community-based projects.

  9. Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

    Science.gov (United States)

    Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

    2017-10-01

    We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

  10. Phospholipid analysis and fractional reconstitution of the ice nucleation protein activity purified from Escherichia coli overexpressing the inaZ gene of Pseudomonas syringae.

    Science.gov (United States)

    Palaiomylitou, M A; Kalimanis, A; Koukkou, A I; Drainas, C; Anastassopoulos, E; Panopoulos, N J; Ekateriniadou, L V; Kyriakidis, D A

    1998-08-01

    Ice nucleation protein was partially purified from the membrane fraction of E. coli carrying inaZ from Pseudomonas syringae. The ice nucleation protein was totally localized in the bacterial envelope and was extracted by either salt (0.25 M NH4Cl) or the nonionic detergent Tween 20. The extracted protein was partially purified by sequential passage through DEAE-52 cellulose and Sephacryl-S400 columns. The activity of the purified protein was lost after treatment with phospholipase C, and its activity was subsequently restored by addition of the naturally occurring lipid phosphatidylethanolamine. These results suggest that ice nucleation proteins have a requirement for lipids that reconstitute a physiological hydrophobic environment similar to the one existing in vivo, to attain and maintain a structure that enables ice catalysis. Copyright 1998 Academic Press.

  11. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

    Science.gov (United States)

    Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; Shaner, E. A.

    2015-11-01

    Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292 . The measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. Excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

  12. X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs[ anti 1 anti 1 anti 1]{sub B}

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Jens; Gottschalch, Volker; Wagner, Gerald [Universitaet Leipzig, Halbleiterchemie, Leipzig (Germany); Pietsch, Ullrich; Davydok, Anton; Biermanns, Andreas [Universitaet Siegen, Festkoerperphysik, Siegen (Germany); Grenzer, Joerg [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany)

    2009-09-15

    The heteroepitaxial growth process of InAs nanowires (NW) on GaAs[ anti 1 anti 1 anti 1]{sub B} substrate was investigated by X-ray grazing-incidence diffraction using synchrotron radiation. For crystal growth we applied the vapor-liquid-solid (VLS) growth mechanism via gold seeds. The general sample structure was extracted from various electron microscopic and X-ray diffraction experiments. We found a closed Ga{sub x}In{sub 1-x} As graduated alloy layer at the substrate to NW interface which was formed in the initial stage of VLS growth with a Au-Ga-In liquid alloy. With ongoing growth time a transition from this VLS layer growth to the conventional VLS NW growth was observed. The structural properties of both VLS grown crystal types were examined. Furthermore, we discuss the VLS layer growth process. (orig.)

  13. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ke; Ma, Wenquan, E-mail: wqma@semi.ac.cn; Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao [Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)

    2015-07-27

    We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

  14. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  15. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    International Nuclear Information System (INIS)

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

    2009-01-01

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  16. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    Energy Technology Data Exchange (ETDEWEB)

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

    2009-11-15

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  17. Surface Brillouin scattering measurement of the elastic constants of single crystal InAs0.91Sb0.09

    International Nuclear Information System (INIS)

    Kotane, L M; Comins, J D; Every, A G; Botha, J R

    2011-01-01

    Surface Brillouin scattering of light has been used to measure the angular dependence of the Rayleigh surface acoustic wave (SAW), pseudo surface acoustic wave (PSAW) and longitudinal lateral wave (LLW) speeds in a (100)-oriented single crystal of the ternary semiconductor alloy InAs 0.91 Sb 0.09 . The wave speed measurements have been used to determine the room temperature values of the elastic constants C 11 , C 12 and C 44 of the alloy. A simple and robust fitting procedure has been implemented for recovering the elastic constants, in which the merit function is constructed from explicit secular functions that determine the surface and lateral wave speeds in the [001] and [011] crystallographic directions. In the fitting, relatively larger weighting factors have been assigned to the SAW and PSAW data because of the greater precision with which the surface modes can be measured as compared with the lateral wave.

  18. UNESCO and atomic energy

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1960-01-15

    Atomic energy has been of particular concern to UNESCO virtually since the founding of this United Nations agency with the mission of promoting the advancement of science along with education and culture. UNESCO has been involved in the scientific aspects of nuclear physics - notably prior to the creation of the International Atomic Energy Agency - but it has also focussed its attention upon the educational and cultural problems of the atomic age. UNESCO's sphere of action was laid down by its 1954 General Conference which authorized its Director-General to extend full co-operation to the United Nations in atomic energy matters, with special reference to 'the urgent study of technical questions such as those involved in the effects of radioactivity on life in general, and to the dissemination of objective information concerning all aspects of the peaceful utilization of atomic energy; to study, and if necessary, to propose measures of international scope to facilitate the use of radioisotopes in research and industry'. UNESCO's first action under this resolution was to call a meeting of a committee of experts from twelve nations to study the establishment of a system of standards and regulations for the preparation, distribution, transport and utilization of radioactive isotopes and tracer molecules

  19. Synthesis of 2-arylidenebenzocycloalkanones containing N-donor heterocyclic rings

    Energy Technology Data Exchange (ETDEWEB)

    Sun, S.-W., E-mail: sunsw0819@163.com [Yuncheng University, Department of Applied Chemistry (China); Zhang, X., E-mail: zhangx@hit.edu.cn [Harbin Institute of Technology, Academy of Fundamental and Interdisciplinary Science (China); Wang, G.-F. [Yuncheng University, Department of Applied Chemistry (China)

    2016-12-15

    A series of 2-arylidenebenzocycloalkanones containing heterocyclic rings 1–8 were prepared and characterized by IR, {sup 1}H NMR and elemental analyses. X-ray diffraction study of 6 reveals that the cyclohexyl ring of the 3,4-dihydronaphthalen-1(2H)-one adopts a chair conformation with a maximum deviation of 0.547(3) Å and makes dihedral angles of 52.24(17)° and 11.23(16)°, respectively, with the benzene plane and the mean plane of the benzimidazole ring.

  20. Lithium cyanide supported by O- and N-donors

    Energy Technology Data Exchange (ETDEWEB)

    Budanow, Alexandra; Franz, Klaus-Dieter; Vitze, Hannes; Fink, Lothar; Alig, Edith; Bolte, Michael; Wagner, Matthias; Lerner, Hans-Wolfram [Institut fuer Anorganische Chemie, Goethe-Universitaet Frankfurt, Max-von-Laue-Str. 7, 60438, Frankfurt (Germany)

    2017-02-15

    A series of adducts of LiCN, namely [Li(Me{sub 2}CO{sub 3})CN], [Li(Et{sub 2}CO{sub 3})CN], and [Li(NMP)CN] (NMP = N-methyl-2-pyrrolidone) were prepared by treatment of solvent-free LiCN with the appropriate donor. The starting material for these approaches, donor-free LiCN, was quantitatively prepared from Me{sub 3}SiCN and Li[Me] in diethyl ether at 0 C. Alternatively, [Li(NMP)CN] was synthesized by metathesis reaction of LiCl with NaCN in the presence of stoichiometric amounts of NMP. Although [Li(Me{sub 2}CO{sub 3})CN] and [Li(Et{sub 2}CO{sub 3})CN] are water-sensitive compounds and decompose at the exposure to air, [Li(NMP)CN] is stable in air, even at elevated temperatures. The thermal stability of [Li(NMP)CN] was proven by differential thermal analysis (DTA). [Li(NMP)CN] shows thermal stability up to temperatures of about 132 C. To evaluate the cyanation ability the reactions of 1-bromooctane and 3-bromocyclohexene with unsupported LiCN, [Li(NMP)CN], and a mixture of NaCN/LiCl/NMP were investigated. We found that [Li(NMP)CN] as well as LiCl/NaCN/NMP are efficient cyanation reagents comparable to the expensive and air-sensitive, donor-free LiCN. A product of the chloride-cyanide-bromide exchange could be isolated and structurally characterized by X-ray diffraction. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Accelerators for atomic energy research

    International Nuclear Information System (INIS)

    Shibata, Tokushi

    1999-01-01

    The research and educational activities accomplished using accelerators for atomic energy research were studied. The studied items are research subjects, facility operation, the number of master theses and doctor theses on atomic energy research using accelerators and the future role of accelerators in atomic energy research. The strategy for promotion of the accelerator facility for atomic energy research is discussed. (author)

  2. Atomic nucleus and elementary particles

    International Nuclear Information System (INIS)

    Zakrzewski, J.

    1976-01-01

    Negatively charged leptons and hadrons can be incorporated into atomic shells forming exotic atoms. Nucleon resonances and Λ hyperons can be considered as constituents of atomic nuclei. Information derived from studies of such exotic systems enriches our knowledge of both the interactions of elementary particles and of the structure of atomic nuclei. (author)

  3. Compilation of data from hadronic atoms

    International Nuclear Information System (INIS)

    Poth, H.

    1979-01-01

    This compilation is a survey of the existing data of hadronic atoms (pionic-atoms, kaonic-atoms, antiprotonic-atoms, sigmonic-atoms). It collects measurements of the energies, intensities and line width of X-rays from hadronic atoms. Averaged values for each hadronic atom are given and the data are summarized. The listing contains data on 58 pionic-atoms, on 54 kaonic-atoms, on 23 antiprotonic-atoms and on 20 sigmonic-atoms. (orig./HB) [de

  4. CP violation in atoms

    International Nuclear Information System (INIS)

    Barr, S.M.

    1992-01-01

    Electric dipole moments of large atoms are an excellent tool to search for CP violation beyond the Standard Model. These tell us about the electron EDM but also about CP-violating electron-nucleon dimension-6 operators that arise from Higgs-exchange. Rapid strides are being made in searches for atomic EDMs. Limits on the electron EDM approaching the values which would be expected from Higgs-exchange mediated CP violation have been achieved. It is pointed out that in this same kind of model if tan β is large the effects in atoms of the dimension-6 e - n operators may outweigh the effect of the electron EDM. (author) 21 refs

  5. US Atomic Energy Law

    International Nuclear Information System (INIS)

    1981-01-01

    This is a new volume follows in the series supplementing the volumes 11 and 12 published in 1965 and 1966, updating the collection of Federal Acts and Executive Orders of the President of the United States of America relating to atomic energy legislation. Since the publication of volumes 11 and 12, the US Atomic Energy Act of 1954 alone has been amended 25 times, mainly as a consequence of by the Nuclear Non-Proliferation Act and the Uranium Mill Tailings Radiation Control Act, both of 1978. The Atomic Energy Act of 1954 is supplemented by a selection of the most important Federal Acts, Executive Orders of the President and Resolutions of the Congress. (orig./HSCH) [de

  6. Atomic profits, no thanks

    International Nuclear Information System (INIS)

    Bartels, W.; Dietrich, K.; Moeller, H.; Speier, C.

    1980-01-01

    The authors deal with the following topics: The secret of nuclear energy; the atom programmes of Bonn; on some arguments of the present nuclear energy discussion; how socialist countries solve the problems of nuclear energy. From the socialist point of view they discuss sociological, ideological and moral reasons for a peaceful utilization of nuclear energy. Nevertheless they refuse Bonn's atom programme because the high finance's interests concerning profit and power make it a danger. The biggest danger is said to lie in the creation of a plutonium-industry and the militaristic abuse which would be connected with it. The socialist way of utilizing atomic energy is seen by them as a way with a high feeling of responsibility towards all people and towards a guaranteed energy supply. (HSCH) [de

  7. Controlling the atom

    International Nuclear Information System (INIS)

    Mazuzan, G.T.; Walker, J.S.

    1984-01-01

    The authors trace the early history of nuclear power regulation in the US. Focusing on the Atomic Energy Commission, they describe the role of other groups that figured in the development of regulatory policies, including the Congressional Joint Committee on Atomic Energy, other federal agencies, state governments, the nuclear industry, and scientific organizations. They consider changes in public perceptions of and attitudes toward atomic energy and the dangers of radiation exposure. The basic purpose of the book is to provide the Nuclear Regulatory Commission and the general public with information on the historical antecedents and background of regulatory issues so that there will be continuity in policy decisions. The book concludes with an annotated bibliography of selected references. 19 figures

  8. Rydberg atoms in strong fields

    International Nuclear Information System (INIS)

    Kleppner, D.; Tsimmerman, M.

    1985-01-01

    Experimental and theoretical achievements in studying Rydberg atoms in external fields are considered. Only static (or quasistatic) fields and ''one-electron'' atoms, i.e. atoms that are well described by one-electron states, are discussed. Mainly behaviour of alkali metal atoms in electric field is considered. The state of theoretical investigations for hydrogen atom in magnetic field is described, but experimental data for atoms of alkali metals are presented as an illustration. Results of the latest experimental and theoretical investigations into the structure of Rydberg atoms in strong fields are presented

  9. Atoms in Slovakia

    International Nuclear Information System (INIS)

    Danis, D.; Feik, K.; Florek, M.; Kmosena, J.; Chrapan, J.; Morovic, M.; Slugen, V.; Seliga, M.; Valovic, J.

    2006-01-01

    In this book the history of development of using of nuclear energy in the Slovak Republic as well as in the Czechoslovakia (before 1993 year) is presented. The aim of the book is to preserve the memory of the period when the creation and development of nuclear physics, technology, nuclear medicine, radioecology and energetics in Slovakia occurred - as witnessed by people who experienced this period and to adapt it to future generations. The Editorial board of the SNUS collected the views of 60 contributors and distinguished workers - Slovakian experts in nuclear science, education and technology. Calling upon a wide spectrum of experts ensured an objective historical description of the period. A huge amount of subjective views on recent decades were collected and supported by a wealth of photographic documentation. This created a synthesised reflection on the history of the 'atoms' in Slovakia. The book contains 15 tables, 192 black and white and 119 colour pictures from around the world and from places involved in the compilation of the study and with the study of atomic science in Slovakia. The main chapters are as follows: Atoms in the world, Atoms in Slovakia, Atoms in the educational system, Atoms in health services (Radiology, Nuclear medicine, Radiation protection, the Cyclotron centre of the Slovak Republic), Radioecology, Other applications of irradiation, Nuclear energetics (Electric energy in the second half of the 20 th century, NPP Bohunice, NPP Mochovce, the back-end of Nuclear energetics, Big names in Nuclear energetics in Slovakia), Chronology and an Appendix entitled 'Slovak companies in nuclear energetics'

  10. Positron-atom collisions

    International Nuclear Information System (INIS)

    Drachman, R.J.

    1984-01-01

    The past decade has seen the field of positron-atom collisions mature into an important sub-field of atomic physics. Increasingly intense positron sources are leading towards a situation in which electron and positron collision experiments will be on almost an equal footing, challenging theory to analyze their similarities and differences. The author reviews the advances made in theory, including dispersion theory, resonances, and inelastic processes. A survey of experimental progress and a brief discussion of astrophysical positronics is also included. (Auth.)

  11. Atomic Force Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Day, R.D.; Russell, P.E.

    1988-12-01

    The Atomic Force Microscope (AFM) is a recently developed instrument that has achieved atomic resolution imaging of both conducting and non- conducting surfaces. Because the AFM is in the early stages of development, and because of the difficulty of building the instrument, it is currently in use in fewer than ten laboratories worldwide. It promises to be a valuable tool for obtaining information about engineering surfaces and aiding the .study of precision fabrication processes. This paper gives an overview of AFM technology and presents plans to build an instrument designed to look at engineering surfaces.

  12. Optically pumped atoms

    CERN Document Server

    Happer, William; Walker, Thad

    2010-01-01

    Covering the most important knowledge on optical pumping of atoms, this ready reference is backed by numerous examples of modelling computation for optical pumped systems. The authors show for the first time that modern scientific computing software makes it practical to analyze the full, multilevel system of optically pumped atoms. To make the discussion less abstract, the authors have illustrated key points with sections of MATLAB codes. To make most effective use of contemporary mathematical software, it is especially useful to analyze optical pumping situations in the Liouville spa

  13. Atomic cluster collisions

    Science.gov (United States)

    Korol, Andrey V.; Solov'yov, Andrey

    2013-01-01

    Atomic cluster collisions are a field of rapidly emerging research interest by both experimentalists and theorists. The international symposium on atomic cluster collisions (ISSAC) is the premier forum to present cutting-edge research in this field. It was established in 2003 and the most recent conference was held in Berlin, Germany in July of 2011. This Topical Issue presents original research results from some of the participants, who attended this conference. This issues specifically focuses on two research areas, namely Clusters and Fullerenes in External Fields and Nanoscale Insights in Radiation Biodamage.

  14. Pulsed atomic soliton laser

    International Nuclear Information System (INIS)

    Carr, L.D.; Brand, J.

    2004-01-01

    It is shown that simultaneously changing the scattering length of an elongated, harmonically trapped Bose-Einstein condensate from positive to negative and inverting the axial portion of the trap, so that it becomes expulsive, results in a train of self-coherent solitonic pulses. Each pulse is itself a nondispersive attractive Bose-Einstein condensate that rapidly self-cools. The axial trap functions as a waveguide. The solitons can be made robustly stable with the right choice of trap geometry, number of atoms, and interaction strength. Theoretical and numerical evidence suggests that such a pulsed atomic soliton laser can be made in present experiments

  15. Polarized atomic beams for targets

    International Nuclear Information System (INIS)

    Grueebler, W.

    1984-01-01

    The basic principle of the production of polarized atomic hydrogen and deuterium beams are reviewed. The status of the present available polarization, density and intensity are presented. The improvement of atomic beam density by cooling the hydrogen atoms to low velocity is discussed. The possible use of polarized atomic beams as targets in storage rings is shown. It is proposed that polarized atomic beams can be used to produce polarized gas targets with high polarization and greatly improved density

  16. Atomic collisions related to atomic laser isotope separation

    International Nuclear Information System (INIS)

    Shibata, Takemasa

    1995-01-01

    Atomic collisions are important in various places in atomic vapor laser isotope separation (AVLIS). At a vaporization zone, many atomic collisions due to high density have influence on the atomic beam characteristics such as velocity distribution and metastable states' populations at a separation zone. In the separation zone, a symmetric charge transfer between the produced ions and the neutral atoms may degrade selectivity. We have measured atomic excitation temperatures of atomic beams and symmetric charge transfer cross sections for gadolinium and neodymium. Gadolinium and neodymium are both lanthanides. Nevertheless, results for gadolinium and neodymium are very different. The gadolinium atom has one 5d electron and neodymium atom has no 5d electron. It is considered that the differences are due to existence of 5d electron. (author)

  17. Spatially resolved photoionization of ultracold atoms on an atom chip

    International Nuclear Information System (INIS)

    Kraft, S.; Guenther, A.; Fortagh, J.; Zimmermann, C.

    2007-01-01

    We report on photoionization of ultracold magnetically trapped Rb atoms on an atom chip. The atoms are trapped at 5 μK in a strongly anisotropic trap. Through a hole in the chip with a diameter of 150 μm, two laser beams are focused onto a fraction of the atomic cloud. A first laser beam with a wavelength of 778 nm excites the atoms via a two-photon transition to the 5D level. With a fiber laser at 1080 nm the excited atoms are photoionized. Ionization leads to depletion of the atomic density distribution observed by absorption imaging. The resonant ionization spectrum is reported. The setup used in this experiment is suitable not only to investigate mixtures of Bose-Einstein condensates and ions but also for single-atom detection on an atom chip

  18. Two New Three-Dimensional Pillared-Layer Co(II and Cu(II Frameworks Involving a [M2(EO-N32] Motif from a Semi-Flexible N-Donor Ligand, 5,5′-Bipyrimidin: Syntheses, Structures and Magnetic Properties

    Directory of Open Access Journals (Sweden)

    Zu-Zhen Zhang

    2018-02-01

    Full Text Available Two new three-dimensional (3D Co(II- and Cu(II-azido frameworks, [Co2(N34(bpym2]n (1 and [Cu2(N34(bpym]n (2, were successfully synthesized by introducing a semi-flexible N-donor ligand, 5,5′-bipyrimidin (bpym, with different bridging modes and orientations. Compounds 1 and 2 were structurally characterized by X-ray crystallography, IR spectroscopy, thermogravimetry and elemental analysis. Compounds 1 and 2 are 3D pillared-layer frameworks with double end-on (EO azido bridged dinuclear motifs, [M2(EO-N32]. In Compound 1, the bpym ligands show trans μ2-bridging mode and the role as pillars to connect the Co(II-azido layers, composed of [Co2(EO-N32] motifs and single end-to-end (EE azido bridges, to a 3D network with BN topology. In contrast, in 2, the bpym ligand adopts a twisted μ4-bridging mode, which not only connects the adjacent [Cu2(EO-N32] units to a layer, but also functions as a pillar for the layers of the 3D structure. The structural diversities between the two types of architectures can be attributed to the coordination geometry preference of the metal ions (octahedral for Co2+ and square pyramidal for Cu2+. Magnetic investigations revealed that Compound 1 exhibits ferromagnetic-like magnetic ordering due to spin canting with a critical temperature, TC = 33.0 K, and furthers the field-induced magnetic transitions of metamagnetism at temperatures below TC. Compound 2 shows an antiferromagnetic ordering with TN = 3.05 K and a field-induced magnetic transition of spin-flop at temperatures below the TN.

  19. Atomic physics through astrophysics

    International Nuclear Information System (INIS)

    Dalgarno, A.

    1987-01-01

    Astronomical environments encompass an extreme range of physical conditions of temperature, density, pressure and radiation fields and unusual situations abound. In this lecture, the author describes some of the objects found in the Universe and discussed the atomic processes that occur. 45 references, 8 figures

  20. Rutherford-Bohr atom

    Science.gov (United States)

    Heilbron, J. L.

    1981-03-01

    Bohr used to introduce his attempts to explain clearly the principles of the quantum theory of the atom with an historical sketch, beginning invariably with the nuclear model proposed by Rutherford. That was sound pedagogy but bad history. The Rutherford-Bohr atom stands in the middle of a line of work initiated by J.J. Thomson and concluded by the invention of quantum mechanics. Thompson's program derived its inspiration from the peculiar emphasis on models characteristic of British physics of the 19th century. Rutherford's atom was a late product of the goals and conceptions of Victorian science. Bohr's modifications, although ultimately fatal to Thomson's program, initially gave further impetus to it. In the early 1920s the most promising approach to an adequate theory of the atom appeared to be the literal and detailed elaboration of the classical mechanics of multiply periodic orbits. The approach succeeded, demonstrating in an unexpected way the force of an argument often advanced by Thomson: because a mechanical model is richer in implications than the considerations for which it was advanced, it can suggest new directions of research that may lead to important discoveries.

  1. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  2. Atoms in Astronomy.

    Science.gov (United States)

    Blanchard, Paul A.

    This booklet is part of an American Astronomical Society curriculum project designed to provide teaching materials to teachers of secondary school chemistry, physics, and earth science. A Basic Topics section discusses atomic structure, emphasizing states of matter at high temperature and spectroscopic analysis of light from the stars. A section…

  3. Atomic energy and you

    International Nuclear Information System (INIS)

    1975-01-01

    The film discusses the peaceful applications of atomic energy in agriculture, engineering, industry and medicine. Shows exploration, prospecting and mining of uraninum ores at Larap, Camarines Norte and the study of geographical conditions of the site for the proposed Nuclear Power Plant in Bataan

  4. Discovery and the atom

    International Nuclear Information System (INIS)

    1989-01-01

    ''Discovery and the Atom'' tells the story of the founding of nuclear physics. This programme looks at nuclear physics up to the discovery of the neutron in 1932. Animation explains the science of the classic experiments, such as the scattering of alpha particles by Rutherford and the discovery of the nucleus. Archive film shows the people: Lord Rutherford, James Chadwick, Marie Curie. (author)

  5. Atomically resolved tissue integration.

    Science.gov (United States)

    Karlsson, Johan; Sundell, Gustav; Thuvander, Mattias; Andersson, Martin

    2014-08-13

    In the field of biomedical technology, a critical aspect is the ability to control and understand the integration of an implantable device in living tissue. Despite the technical advances in the development of biomaterials, the elaborate interplay encompassing materials science and biology on the atomic level is not very well understood. Within implantology, anchoring a biomaterial device into bone tissue is termed osseointegration. In the most accepted theory, osseointegration is defined as an interfacial bonding between implant and bone; however, there is lack of experimental evidence to confirm this. Here we show that atom probe tomography can be used to study the implant-tissue interaction, allowing for three-dimensional atomic mapping of the interface region. Interestingly, our analyses demonstrated that direct contact between Ca atoms and the implanted titanium oxide surface is formed without the presence of a protein interlayer, which means that a pure inorganic interface is created, hence giving experimental support to the current theory of osseointegration. We foresee that this result will be of importance in the development of future biomaterials as well as in the design of in vitro evaluation techniques.

  6. Atomic transport properties

    International Nuclear Information System (INIS)

    Freyss, M.

    2015-01-01

    As presented in the first chapter of this book, atomic transport properties govern a large panel of nuclear fuel properties, from its microstructure after fabrication to its behaviour under irradiation: grain growth, oxidation, fission product release, gas bubble nucleation. The modelling of the atomic transport properties is therefore the key to understanding and predicting the material behaviour under irradiation or in storage conditions. In particular, it is noteworthy that many modelling techniques within the so-called multi-scale modelling scheme of materials make use of atomic transport data as input parameters: activation energies of diffusion, diffusion coefficients, diffusion mechanisms, all of which are then required to be known accurately. Modelling approaches that are readily used or which could be used to determine atomic transport properties of nuclear materials are reviewed here. They comprise, on the one hand, static atomistic calculations, in which the migration mechanism is fixed and the corresponding migration energy barrier is calculated, and, on the other hand, molecular dynamics calculations and kinetic Monte-Carlo simulations, for which the time evolution of the system is explicitly calculated. (author)

  7. Experimental atomic physics

    International Nuclear Information System (INIS)

    Sellin, I.A.; Elston, S.B.; Forester, J.P.; Liao, K.H.; Pegg, D.J.; Peterson, R.S.; Thoe, R.S.; Hayden, H.C.; Griffin, P.M.

    1976-01-01

    The atomic structure and collision phenomena of highly stripped ions in the range Z = 6 to 35 were studied. Charge-transfer and multiple-electron-loss cross sections were determined. Absolute x-ray-production cross sections for incident heavy ions were measured. 10 figures, 1 table

  8. Transition probabilities for atoms

    International Nuclear Information System (INIS)

    Kim, Y.K.

    1980-01-01

    Current status of advanced theoretical methods for transition probabilities for atoms and ions is discussed. An experiment on the f values of the resonance transitions of the Kr and Xe isoelectronic sequences is suggested as a test for the theoretical methods

  9. Ludwig Boltzmann: Atomic genius

    Energy Technology Data Exchange (ETDEWEB)

    Cercignani, C. [Department of Mathematics, Politecnico di Milano (Italy)]. E-mail: carcer@mate.polimi.it

    2006-09-15

    On the centenary of the death of Ludwig Boltzmann, Carlo Cercignani examines the immense contributions of the man who pioneered our understanding of the atomic nature of matter. The man who first gave a convincing explanation of the irreversibility of the macroscopic world and the symmetry of the laws of physics was the Austrian physicist Ludwig Boltzmann, who tragically committed suicide 100 years ago this month. One of the key figures in the development of the atomic theory of matter, Boltzmann's fame will be forever linked to two fundamental contributions to science. The first was his interpretation of 'entropy' as a mathematically well-defined measure of the disorder of atoms. The second was his derivation of what is now known as the Boltzmann equation, which describes the statistical properties of a gas as made up of molecules. The equation, which described for the first time how a probability can evolve with time, allowed Boltzmann to explain why macroscopic phenomena are irreversible. The key point is that while microscopic objects like atoms can behave reversibly, we never see broken coffee cups reforming because it would involve a long series of highly improbable interactions - and not because it is forbidden by the laws of physics. (U.K.)

  10. Observational Evidence for Atoms.

    Science.gov (United States)

    Jones, Edwin R., Jr.; Childers, Richard L.

    1984-01-01

    Discusses the development of the concept of atomicity and some of the many which can be used to establish its validity. Chemical evidence, evidence from crystals, Faraday's law of electrolysis, and Avogadro's number are among the areas which show how the concept originally developed from a purely philosophical idea. (JN)

  11. Coherent atomic spectroscopy

    International Nuclear Information System (INIS)

    Garton, W.R.S.

    1988-01-01

    The Argonne Spectroscopy Laboratory, initiated and advanced over several decades by F.S. Tomkins and M. Fred, has been a major international facility. A range of collaborative work in atomic spectroscopy is selected to illustrate advances in experimental physics which have been made possible by combination of the talents of Tomkins and Fred with the unique facilities of the Argonne Laboratory. (orig.)

  12. Spectra of alkali atoms

    International Nuclear Information System (INIS)

    Santoso, Budi; Arumbinang, Haryono.

    1981-01-01

    Emission spectra of alkali atoms has been determined by using spectrometer at the ultraviolet to infra red waves range. The spectra emission can be obtained by absorption spectrophotometric analysis. Comparative evaluations between experimental data and data handbook obtained by spark method were also presented. (author tr.)

  13. Atomic Particle Detection

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Hal

    1970-01-01

    This booklet tells how scientists observe the particles and electromagnetic radiation that emerges from an atomic nucleus. The equipment used falls into two general categories: counters which count each particle as it passes by, and track detectors, which make a photographic record of the particle's track.

  14. Atomic Physics 16: Sixteenth International Conference on Atomic Physics. Proceedings

    International Nuclear Information System (INIS)

    Baylis, W.E.; Drake, G.W.

    1999-01-01

    These proceedings represent papers presented at the 16th International Conference on Atomic Physics held in Windsor, Ontario, Canada, in August, 1998. The topics discussed included a wide array of subjects in atomic physics such as atom holography, alignment in atomic collisions, coulomb-interacting particles, muon experiments, x-rays from comets, atomic electron collisions in intense laser fields, spectroscopy of trapped ions, and Bose-Einstein condensates. This conference represents the single most important meeting world wide on fundamental advances in atomic physics. There were 30 papers presented at the conference,out of which 4 have been abstracted for the Energy, Science and Technology database

  15. Atomic bomb injury: radiation

    Energy Technology Data Exchange (ETDEWEB)

    Dunham, C L; Cronkite, E P; Le Roy, G V; Warren, S

    1959-01-01

    This document contains 3 reports. In the first report, the clinical diagnosis and treatment of radiation syndrome in survivors of the atomic explosions in Hiroshima and Nagasaki are described. The syndrome of acute radiation injury is applied to the symptom complex, or diseased state, which results from exposure of the whole body to the initial nuclear radiation of an atomic bomb. It is applied to injuries of the skin and subcutaneous tissues resulting from x-radiation or from contact with radioactive material. Internal radiation injury may result from the selective deposition, such as in bone or thyroid, of radioactive material that has been inhaled or absorbed through the gastrointestinal tract or wounds. Radiation syndrome is classified as very severe, severe, and mild. In the second report, a brief discussion is presented on the question of genetic effects in atomic bomb survivors in Hiroshima and Nagasaki. In the third report, a study was carried out on 205 4-1/2 year old children who had been exposed to the atomic bomb blast during the first half of intra-uterine life. Correlation between head size and mental development of the child with distance from the hypocenter, symptoms of radiation effect and type of shielding of the mother is discussed. The conclusion drawn from the present study is that central nervous system defects can be produced in the fetus by atomic bomb radiation, provided that exposure occurs within approximately 1200 meters of the hypocenter and that no effective shielding, such as concrete, protects the fetus from direct irradiation.

  16. Trapped atoms along nanophotonic resonators

    Science.gov (United States)

    Fields, Brian; Kim, May; Chang, Tzu-Han; Hung, Chen-Lung

    2017-04-01

    Many-body systems subject to long-range interactions have remained a very challenging topic experimentally. Ultracold atoms trapped in extreme proximity to the surface of nanophotonic structures provides a dynamic system combining the strong atom-atom interactions mediated by guided mode photons with the exquisite control implemented with trapped atom systems. The hybrid system promises pair-wise tunability of long-range interactions between atomic pseudo spins, allowing studies of quantum magnetism extending far beyond nearest neighbor interactions. In this talk, we will discuss our current status developing high quality nanophotonic ring resonators, engineered on CMOS compatible optical chips with integrated nanostructures that, in combination with a side illuminating beam, can realize stable atom traps approximately 100nm above the surface. We will report on our progress towards loading arrays of cold atoms near the surface of these structures and studying atom-atom interaction mediated by photons with high cooperativity.

  17. Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiyin; Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn; Lei, Zijin [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Pan, Dong; Zhao, Jianhua [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Xu, H. Q., E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Division of Solid State Physics, Lund University, Box 118, S-22100 Lund (Sweden)

    2016-08-01

    We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

  18. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  19. Ionization of highly excited atoms by atomic particle impact

    International Nuclear Information System (INIS)

    Smirnov, B.M.

    1976-01-01

    The ionization of a highly excited atom by a collision with an atom or molecule is considered. The theory of these processes is presented and compared with experimental data. Cross sections and ionization potential are discussed. 23 refs

  20. Single-atom lasing induced atomic self-trapping

    International Nuclear Information System (INIS)

    Salzburger, T.; Ritsch, H.

    2004-01-01

    We study atomic center of mass motion and field dynamics of a single-atom laser consisting of a single incoherently pumped free atom moving in an optical high-Q resonator. For sufficient pumping, the system starts lasing whenever the atom is close to a field antinode. If the field mode eigenfrequency is larger than the atomic transition frequency, the generated laser light attracts the atom to the field antinode and cools its motion. Using quantum Monte Carlo wave function simulations, we investigate this coupled atom-field dynamics including photon recoil and cavity decay. In the regime of strong coupling, the generated field shows strong nonclassical features like photon antibunching, and the atom is spatially confined and cooled to sub-Doppler temperatures. (author)

  1. Angular momentum coupling in atom-atom collisions

    International Nuclear Information System (INIS)

    Grosser, J.

    1986-01-01

    The coupling between the electronic angular momentum and the rotating atom-atom axis in the initial or the final phase of an atom-atom collision is discussed, making use of the concepts of radial and rotational (Coriolis) coupling between different molecular states. The description is based on a limited number of well-understood approximations, and it allows an illustrative geometric representation of the transition from the body fixed to the space fixed motion of the electrons. (orig.)

  2. Hot atom chemistry of monovalent atoms in organic condensed phases

    International Nuclear Information System (INIS)

    Stoecklin, G.

    1975-01-01

    The advantages and disadvantages of hot atom studies in condensed organic phases are considered, and recent advances in condensed phase organic hot atom chemistry of recoil tritium and halogen atoms are discussed. Details are presented of the present status and understanding of liquid phase hot atom chemistry and also that of organic solids. The consequences of the Auger effect in condensed organic systems are also considered. (author)

  3. Absorption imaging of ultracold atoms on atom chips

    DEFF Research Database (Denmark)

    Smith, David A.; Aigner, Simon; Hofferberth, Sebastian

    2011-01-01

    Imaging ultracold atomic gases close to surfaces is an important tool for the detailed analysis of experiments carried out using atom chips. We describe the critical factors that need be considered, especially when the imaging beam is purposely reflected from the surface. In particular we present...... methods to measure the atom-surface distance, which is a prerequisite for magnetic field imaging and studies of atom surface-interactions....

  4. Use of Remotely Piloted Aircraft System (RPAS) in the analysis of historical landslide occurred in 1885 in the Rječina River Valley, Croatia

    Science.gov (United States)

    Dugonjić Jovančević, Sanja; Peranić, Josip; Ružić, Igor; Arbanas, Željko; Kalajžić, Duje; Benac, Čedomir

    2016-04-01

    Numerous instability phenomena have been recorded in the Rječina River Valley, near the City of Rijeka, in the past 250 years. Large landslides triggered by rainfall and floods, were registered on both sides of the Valley. Landslide inventory in the Valley was established based on recorded historical events and LiDAR imagery. The Rječina River is a typical karstic river 18.7km long, originating from the Gorski Kotar Mountains. The central part of the Valley, belongs to the dominant morphostructural unit that strikes in the northwest-southeast direction along the Rječina River. Karstified limestone rock mass is visible on the top of the slopes, while the flysch rock mass is present on the lower slopes and at the bottom of the Valley. Different types of movements can be distinguished in the area, such as the sliding of slope deposits over the flysch bedrock, rockfalls from limestone cliffs, sliding of huge rocky blocks, and active landslide on the north-eastern slope. The paper presents investigation of the dormant landslide located on the south-western slope of the Valley, which was recorded in 1870 in numerous historical descriptions. Due to intense and long-term rainfall, the landslide was reactivated in 1885, destroying and damaging houses in the eastern part of the Grohovo Village. To predict possible reactivation of the dormant landslide on the south-western side of the Valley, 2D stability back analyses were performed on the basis of landslide features, in order to approximate the position of sliding surface and landslide dimensions. The landslide topography is very steep, and the slope is covered by unstable debris material, so therefore hard to perform any terrestrial geodetic survey. Consumer-grade DJI Phantom 2 Remotely Piloted Aircraft System (RPAS) was used to provide the data about the present slope topography. The landslide 3D point cloud was derived from approximately 200 photographs taken with RPAS, using structure-from-motion (SfM) photogrammetry

  5. The Atomic energy basic law

    International Nuclear Information System (INIS)

    1979-01-01

    The law aims to secure future energy resources, push forward progress of science and advancement of industry for welfare of the mankind and higher standard of national life by helping research, development and utilization of atomic power. Research, development and utilization of atomic power shall be limited to the peaceful purpose with emphasis laid on safety and carried on independently under democratic administration. Basic concepts and terms are defined, such as: atomic power; nuclear fuel material; nuclear raw material; reactor and radiation. The Atomic Energy Commission and the Atomic Energy Safety Commission shall be set up at the Prime Minister's Office deliberately to realize national policy of research, development and utilization of atomic power and manage democratic administration for atomic energy. The Atomic Energy Commission shall plan, consider and decide matters concerning research, development and utilization of atomic energy. The Atomic Energy Safety Commission shall plan, consider and decide issues particularly concerning safety securing among such matters. The Atomic Energy Research Institute shall be founded under the governmental supervision to perform research, experiment and other necessary affairs for development of atomic energy. The Power Reactor and Nuclear Fuel Development Corporation shall be established likewise to develop fast breeding reactor, advanced thermal reactor and nuclear fuel materials. Development of radioactive minerals, control of nuclear fuel materials and reactors and measures for patent and invention concerning atomic energy, etc. are stipulated respectively. (Okada, K.)

  6. Atomic Absorption, Atomic Fluorescence, and Flame Emission Spectrometry.

    Science.gov (United States)

    Horlick, Gary

    1984-01-01

    This review is presented in six sections. Sections focus on literature related to: (1) developments in instrumentation, measurement techniques, and procedures; (2) performance studies of flames and electrothermal atomizers; (3) applications of atomic absorption spectrometry; (4) analytical comparisons; (5) atomic fluorescence spectrometry; and (6)…

  7. Atomic Act amended

    International Nuclear Information System (INIS)

    Drabova, D.

    2002-01-01

    In the paper by the chairwoman of the Czech nuclear regulatory authority, the history of Czech nuclear legislation is outlined, the reasons for the amendment of the Atomic Act (Act No. 18/1997) are explained, and the amendments themselves are highlighted. The Act No. 13/2002 of 18 December 2001 is reproduced from the official Collection of Acts of the Czech Republic in the facsimile form. The following acts were thereby amended: Atomic Act No. 18/1997, Metrology Act No. 505/1990, Public Health Protection Act No. 258/2000, and Act No. 2/1969 on the Establishment of Ministries and Other Governmental Agencies of the Czech Republic. (P.A.)

  8. Atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Haswell, S.J.

    1991-01-01

    Atomic absorption spectroscopy is now well established and widely used technique for the determination of trace and major elements in a wide range analyte types. There have been many advances in the atomic spectroscopy over the last decade and for this reason and to meet the demand, it was felt that there was a need for an updated book. Whilst interest in instrumental design has tended to dominate the minds of the spectrocopist, the analyst concerned with obtaining reliable and representative data, in diverse areas of application, has been diligently modifying and developing sample treatment and instrumental introduction techniques. Such methodology is de fundamental part of analysis and form the basis of the fourteen application chapters of this book. The text focuses in the main on AAS; however, the sample handling techniques described are in many cases equally applicable to ICP-OES and ICP-MS analysis. (author). refs.; figs.; tabs

  9. Elementary relativistic atoms

    International Nuclear Information System (INIS)

    Nemenov, L.

    2001-01-01

    The Coulomb interaction which occurs in the final state between two particles with opposite charges allows for creation of the bound state of these particles. In the case when particles are generated with large momentum in lab frame, the Lorentz factors of the bound state will also be much larger than one. The relativistic velocity of the atoms provides the opportunity to observe bound states of (π + μ - ), (π + π - ) and (π + K - ) with a lifetime as short as 10 -16 s, and to measure their parameters. The ultrarelativistic positronium atoms (A 2e ) allow us to observe the e.ect of superpenetration in matter, to study the effects caused by the formation time of A 2e from virtual e + e - pairs and to investigate the process of transformation of two virtual particles into the bound state

  10. Atomic assistance in 1961

    International Nuclear Information System (INIS)

    1961-01-01

    More than 100 experts provided by the International Atomic Energy Agency will be working in different parts of the world this year, assisting the Agency's Member States in building up their national programs of peaceful atomic development. The total allocation of EPTA funds to the Agency for the two-year period 1961-62 is $1 393 600 (of which approximately half is available in 1961), and is meant not only for the provision of experts and equipment but also for training fellowships and regional projects. The countries which will receive Agency assistance in the form of experts and equipment this year are: Afghanistan, Argentina, Austria, Brazil, Burma, Ceylon, Chile, the Republic of China, Denmark, Greece, Guatemala, Iceland, Indonesia, Iran, Iraq, Israel, Japan, the Republic of Korea, the Republic of Mali, Mexico, Morocco, Pakistan, the Philippines, Senegal, the Sudan, Thailand, Tunisia, Turkey, the United Arab Republic, Vietnam and Yugoslavia

  11. Meteorology and atomic energy

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    The science of meteorology is useful in providing information that will be of assistance in the choice of favorable plant locations and in the evaluation of significant relations between meteorology and the design, construction, and operation of plant and facilities, especially those from which radioactive or toxic products could be released to the atmosphere. Under a continuing contract with the Atomic Energy Commission, the Weather Bureau has carried out this study. Some of the meteorological techniques that are available are summarized, and their applications to the possible atmospheric pollution deriving from the use of atomic energy are described. Methods and suggestions for the collection, analysis, and use of meteorological data are presented. Separate abstracts are included of 12 chapters in this publication for inclusion in the Energy Data Base

  12. Glossary of atomic terms

    International Nuclear Information System (INIS)

    1982-04-01

    This glossary, containing almost 400 terms, has been compiled to help people outside the atomic energy industry to understand what those inside it are saying. It is not intended to be a definitive dictionary of scientific or technical terms, nor does it aim to cover terms that are in general use in science and technology. A list of about 100 initials and acronyms will be found at the end. (author)

  13. Glossary of atomic terms

    International Nuclear Information System (INIS)

    1980-01-01

    This glossary (of about 400 terms) has been compiled to help people outside the atomic energy industry to understand what those inside it are saying. It is not intended to be a definitive dictionary of scientific or technical terms, nor does it aim to cover terms that are in general use in science and technology. A list of some initials and acronyms is appended. (author)

  14. Fragmentation of atomic systems

    International Nuclear Information System (INIS)

    Bohn, J.L.; Fano, U.

    1996-01-01

    We report recent progress toward a nonperturbative formulation of many-body quantum dynamics that treats all constituent particles on an equal footing. This formulation is capable of detailing the evolution of a system toward the diverse fragments into which it can break up. We illustrate the general concept with the simple example of the simultaneous excitation of both electrons in a helium atom. copyright 1996 The American Physical Society

  15. Atomic and molecular theory

    International Nuclear Information System (INIS)

    Inokuti, Mitio.

    1990-01-01

    The multifaceted role of theoretical physics in understanding the earliest stages of radiation action is discussed. Scientific topics chosen for the present discourse include photoabsorption, electron collisions, and ionic collisions, and electron transport theory, Connections of atomic and molecular physics with condensed-matter physics are also discussed. The present article includes some historical perspective and an outlook for the future. 114 refs., 3 figs

  16. Navigation with Atom Interferometers

    Science.gov (United States)

    2017-03-20

    of frequency L . This problem can be found in many standard quantum optics textbooks e.g [6]. In textbooks , the two states are usually ground and...imprinted” on the atom. Taking into account all three laser pulses, the phase difference then becomes )2()(2)0( TtTtt   , (4a

  17. Atomic emission spectroscopy

    Science.gov (United States)

    Andrew, K. H.

    1975-01-01

    The relationship between the Slater-Condon theory and the conditions within the atom as revealed by experimental data was investigated. The first spectrum of Si, Rb, Cl, Br, I, Ne, Ar, and Xe-136 and the second spectrum of As, Cu, and P were determined. Methods for assessing the phase stability of fringe counting interferometers and the design of an autoranging scanning system for digitizing the output of an infrared spectrometer and recording it on magnetic tape are described.

  18. Atomic and molecular theory

    Energy Technology Data Exchange (ETDEWEB)

    Inokuti, Mitio.

    1990-01-01

    The multifaceted role of theoretical physics in understanding the earliest stages of radiation action is discussed. Scientific topics chosen for the present discourse include photoabsorption, electron collisions, and ionic collisions, and electron transport theory, Connections of atomic and molecular physics with condensed-matter physics are also discussed. The present article includes some historical perspective and an outlook for the future. 114 refs., 3 figs.

  19. Australia's atomic conspiracy theory

    International Nuclear Information System (INIS)

    Binnie, A.

    2001-01-01

    The author questions claims by the Newcastle University historian Wayne Reynolds in his book 'Australia's Bid for the Bomb', that the impetus behind the Snowy Mountains Scheme was to provide a secure source of power for the enrichment of uranium and production of heavy water so that Australia could produce its own atomic bombs. Reynolds also argued that the Australian Atomic Energy Commission (AAEC) was set up so that Australia had a trained scientific workforce to produce plutonium for the bomb. While the book is well researched, Reynolds does not seem to understand the principles of basic science and engineering. After the Second World War, a manufacturing and industrial base with a skilled and trained workforce was needed so it could be converted to war or defence manufacturing when the need arose. This new manufacturing community would require electrical power to sustain it. Hydroelectricity and atomic energy could help provide these needs. Even though war was still raging, Prime Minister John Curtin looked ahead and set up a Department of Post-War Reconstruction. It was through this department that the Snowy Mountains Scheme would be established. Curtin did not live to see this. He died in 1945 but his successor, Ben Chifley, continued the vision. The author believes, an understanding of the science behind these developments and an appreciation of how how humans interact with each others when it comes to getting something they want is likely to give a more balanced view of the past

  20. Ghost imaging with atoms

    Science.gov (United States)

    Khakimov, R. I.; Henson, B. M.; Shin, D. K.; Hodgman, S. S.; Dall, R. G.; Baldwin, K. G. H.; Truscott, A. G.

    2016-12-01

    Ghost imaging is a counter-intuitive phenomenon—first realized in quantum optics—that enables the image of a two-dimensional object (mask) to be reconstructed using the spatio-temporal properties of a beam of particles with which it never interacts. Typically, two beams of correlated photons are used: one passes through the mask to a single-pixel (bucket) detector while the spatial profile of the other is measured by a high-resolution (multi-pixel) detector. The second beam never interacts with the mask. Neither detector can reconstruct the mask independently, but temporal cross-correlation between the two beams can be used to recover a ‘ghost’ image. Here we report the realization of ghost imaging using massive particles instead of photons. In our experiment, the two beams are formed by correlated pairs of ultracold, metastable helium atoms, which originate from s-wave scattering of two colliding Bose-Einstein condensates. We use higher-order Kapitza-Dirac scattering to generate a large number of correlated atom pairs, enabling the creation of a clear ghost image with submillimetre resolution. Future extensions of our technique could lead to the realization of ghost interference, and enable tests of Einstein-Podolsky-Rosen entanglement and Bell’s inequalities with atoms.