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Sample records for ina n-donor atoms

  1. Surface Preparation of InAs (110 Using Atomic Hydrogen

    Directory of Open Access Journals (Sweden)

    T.D. Veal

    2002-06-01

    Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

  2. Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles

    Science.gov (United States)

    Li, Luying; Gan, Zhaofeng; McCartney, Martha R.; Liang, Hanshuang; Yu, Hongbin; Gao, Yihua; Wang, Jianbo; Smith, David J.

    2013-01-01

    The atomic arrangements of two types of InAs dislocation cores associated by a Z-shape faulted dipole are observed directly by aberration-corrected high-angle annular-dark-field imaging. Single unpaired columns of different atoms in a matrix of dumbbells are clearly resolved, with observable variations of bonding lengths due to excess Coulomb force from bare ions at the dislocation core. The corresponding geometric phase analysis provides confirmation that the dislocation cores serve as origins of strain field inversion while stacking faults maintain the existing strain status. PMID:24231692

  3. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    International Nuclear Information System (INIS)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  4. Neutron diffraction determination of mean-square atomic displacements in InAs and GaSb

    International Nuclear Information System (INIS)

    Tibballs, J.E.; Feteris, S.M.; Barnea, Z.

    1981-01-01

    Integrated intensities for Bragg reflection of neutrons from single crystals of the III-V compounds InAs and GaSb have been measured at room temperature. The data were collected at two wave-lengths, 0.947 and 1.241 A, in order to establish the adequacy of a correction for moderate to severe anisotropic extinction. Data were also obtained for InAs at four temperatures from 408 to 933 K. Corrections for thermal diffuse scattering were applied. The results were analysed in the one-particle potential perturbation approximation with terms to fourth order in the atomic displacements u(u 1 , u 2 , u 3 ). At 296 K, the mean-square components usub(s) 2 determined were: In, 0.0116(2) A 2 ; As, 0.0102(1) A 2 ; and Ga, 0.0120(3)A 2 ; Sb, 0.0107(3)A 2 . The third-order coefficients for InAs are comparable with those for Si and Ge, while those for GaSb are comparable with those for zinc chalcogenides. Below 400 K, the mean-square displacements in InAs decrease faster than predicted by the present perturbation approach

  5. Atomic resolution imaging of in situ InAs nanowire dissolution at elevated temperature

    DEFF Research Database (Denmark)

    Pennington, Robert S.; Jinschek, Joerg; Wagner, Jakob Birkedal

    2010-01-01

    We present a preliminary study of the in situ heating of InAs nanowires in a gaseous environment in an environmental transmission electron microscope Nanowire dissolution, accompanied by dynamic reshaping of crystalline Au-containing catalyst particles at the ends of the wires, is observed...

  6. Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Sanchez, J; Alonso-Gonzalez, P; Herranz, J; Gonzalez, Y; Gonzalez, L [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760-Tres Cantos, Madrid (Spain)

    2009-03-25

    In this work, we present a fabrication process that combines atomic force microscopy (AFM) local oxidation nanolithography and molecular beam epitaxy (MBE) growth techniques in order to control both the nucleation site and number of InAs quantum dots (QDs) inside different motifs printed on GaAs(001) substrates. We find that the presence of B-type slopes (As terminated) inside the pattern motifs is the main parameter for controlling the selectivity of the pattern for InAs growth. We demonstrate that either single InAs QDs or multiple InAs QDs in a lateral arrangement (LQDAs) can be obtained, with a precise control in their position and QD number, simply by varying the fabricated oxide length along the [110] direction.

  7. Atomic scale characterization of ion-induced amorphization of GaAs and InAs using PAC spectroscopy

    International Nuclear Information System (INIS)

    Dogra, R.; Byrne, A.P.; Ridgway, M.C.

    2005-01-01

    Single crystals of GaAs (100) and InAs (100) were implanted with 1-7 MeV 74 Ge ions over a wide dose range at liquid nitrogen temperature. The implanted substrates were investigated with respect to the damage production by means of perturbed angular correlation spectroscopy based upon hyperfine interactions of nuclear electromagnetic moments of probe nuclei with extra-nuclear fields. The perturbed angular correlation measurements were performed at room temperature utilizing the 111 In/Cd radioisotope probe nuclei. The crystalline, disordered and amorphous probe environments were identified from the measurements. The defect production is described within the framework of different amorphization models. (author). 6 refs., 2 figs

  8. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    Vertical External Cavity Surface Emitting Lasers). 2)! Installation of a FTIR based temperature dependent reflectivity setup for characterizing VECSELs...and SESAMs (Semiconductor Saturable Absorber Mirrors). 3)! Demonstration of up to 6 Watts CW with InAs QD (Quantum Dot) VECSELs (1250 nm) and 15...AFRL and at other university collaborators such as the University of Arizona. 2.#Installation#of#a# FTIR #based#temperature#dependent#reflectivity

  9. Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy

    Science.gov (United States)

    Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Richard, Olivier; Bender, Hugo; Mols, Yves; Vila, María; Rubio-Zuazo, Juan; Castro, Germán R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc

    2017-12-01

    The mechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs nanowire (NW) grown by selective area epitaxy (SAE) is studied. We demonstrate that the crystal structure in InAs NW grown by SAE can be controlled using basic growth parameters, and wurtzitelike InAs NWs are achieved. We link the polytypic InAs NWs SAE to the reconstruction of the growth front (111)B surface. Surface reconstruction study of InAs (111) substrate and the following homoepitaxy experiment suggest that (111) planar defect nucleation is related to the (1 × 1) reconstruction of InAs (111)B surface. In order to reveal it more clearly, a model is presented to correlate growth temperature and arsenic partial pressure with InAs NW crystal structure. This model considers the transition between (1 × 1) and (2 × 2) surface reconstructions in the frame of adatom atoms adsorption/desorption, and the polytypism is thus linked to reconstruction quantitatively. The experimental data fit well with the model, which highly suggests that surface reconstruction plays an important role in the polytypism phenomenon in InAs NWs SAE.

  10. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  11. Application of X-ray single crystal diffractometry to investigation of Np(5) complexes with n-donor ligands

    International Nuclear Information System (INIS)

    Andreev, G.

    2007-01-01

    Full text of publication follows. We present here some results of application of conventional X-ray single crystal diffractometry to the research on the interaction of Np(V) with N-donor ligands. Compounds that can coordinate to actinides through one or several nitrogen atoms are of a great variety and occur widely in the biosphere. For example, imidazole, pyridine and their derivatives are the building blocks of many biologically important molecules; triazines are known to occur in some aquatic plants. The presence of anthropogenic organic agents like amine-N-carboxylic acids in surface waters has the potential to re-mobilize metals from sediments and aquifers and to influence their bioavailability. The interaction of radionuclides with such ligands needs to be studied in detail to give fundamental understanding the conditions of the incorporation of long lived a-emitters (Np and Pu primarily) into the food chain. Another aspect of the same problem is the design of new chelating ligands for selective co-ordination of actinide ions as an alternative to the traditional sequestering agents. The problem of the separation of long-lived minor actinides and their transmutation also calls for design of new highly selective ligands for solvent extraction. Polydentate N-donor ligands are now considered to be very promising. A detailed study of structural chemistry is crucial for understanding the relationship between the architecture of the ligands and their binding affinity for actinides. The X-ray single crystal diffractometry became conventional technique as applied to the investigation of actinides in spite of difficulties regarding safe handling of radionuclides. This technique provides unambiguous information about modes of the ligand co-ordination to the metal ion and geometrical parameters of complexes. Moreover, the employment of a synchrotron radiation shows considerable promise for determination of solid state structures as well as obtaining structural

  12. Elastic properties and electron transport in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  13. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  14. Atoms

    International Nuclear Information System (INIS)

    Fuchs, Alain; Villani, Cedric; Guthleben, Denis; Leduc, Michele; Brenner, Anastasios; Pouthas, Joel; Perrin, Jean

    2014-01-01

    Completed by recent contributions on various topics (atoms and the Brownian motion, the career of Jean Perrin, the evolution of atomic physics since Jean Perrin, relationship between scientific atomism and philosophical atomism), this book is a reprint of a book published at the beginning of the twentieth century in which the author addressed the relationship between atomic theory and chemistry (molecules, atoms, the Avogadro hypothesis, molecule structures, solutes, upper limits of molecular quantities), molecular agitation (molecule velocity, molecule rotation or vibration, molecular free range), the Brownian motion and emulsions (history and general features, statistical equilibrium of emulsions), the laws of the Brownian motion (Einstein's theory, experimental control), fluctuations (the theory of Smoluchowski), light and quanta (black body, extension of quantum theory), the electricity atom, the atom genesis and destruction (transmutations, atom counting)

  15. Women Fellows of INAE | Women in Science | Initiatives | Indian ...

    Indian Academy of Sciences (India)

    Women Fellows of INAE. INAE - Indian National Academy of Engineering. Ms. Alpa Sheth Civil Engineering. Prof. Bharathi Bhat Electronics & Communication Engineering. Prof. Dipanwita Roy Chowdhury Computer Engineering and Information Technology. Prof. Kamala Krithivasan Computer Engineering and Information ...

  16. Metallo-supramolecular Architectures based on Multifunctional N-Donor Ligands

    OpenAIRE

    Tanh Jeazet, Harold Brice

    2010-01-01

    Self-assembly processes were used to construct supramolecular architectures based on metal-ligand interactions. The structures formed strongly depend on the used metal ion, the ligand type, the chosen counter ion and solvent as well as on the experimental conditions. The focus of the studies was the design of multifunctional N-donor ligands and the characterization of their complexing and structural properties. This work was divided into three distinct main parts: The bis(2-pyridylimine), the...

  17. Studies on the controlled growth of InAs nanostructures on scission surfaces

    International Nuclear Information System (INIS)

    Bauer, J.

    2006-01-01

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {110}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {110}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  18. Simple intrinsic defects in InAs :

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  19. Photoluminescence of chemically treated InAs (111)A

    Science.gov (United States)

    Eassa, N.; Coetsee, E.; Swart, H. C.; Venter, A.; Botha, J. R.

    2014-06-01

    Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/ (NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111). Band-to-band transitions have been observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and to sulphur (at 0.414 eV), have been detected after treatment.

  20. Identification of Ina proteins from Fusarium acuminatum

    Science.gov (United States)

    Scheel, Jan Frederik; Kunert, Anna Theresa; Pöschl, Ulrich; Fröhlich-Nowoisky, Janine

    2015-04-01

    Freezing of water above -36° C is based on ice nucleation activity (INA) mediated by ice nucleators (IN) which can be of various origins. Beside mineral IN, biological particles are a potentially important source of atmospheric IN. The best-known biological IN are common plant-associated bacteria. The IN activity of these bacteria is induced by a surface protein on the outer cell membrane, which is fully characterized. In contrast, much less is known about the nature of fungal IN. The fungal genus Fusarium is widely spread throughout the earth. It belongs to the Ascomycota and is one of the most severe fungal pathogens. It can affect a variety of organisms from plants to animals including humans. INA of Fusarium was already described about 30 years ago and INA of Fusarium as well as other fungal genera is assumed to be mediated by proteins or at least to contain a proteinaceous compound. Although many efforts were made the precise INA machinery of Fusarium and other fungal species including the proteins and their corresponding genes remain unidentified. In this study preparations from living fungal samples of F. acuminatum were fractionated by liquid chromatography and IN active fractions were identified by freezing assays. SDS-page and de novo sequencing by mass spectrometry were used to identify the primary structure of the protein. Preliminary results show that the INA protein of F. acuminatum is contained in the early size exclusion chromatography fractions indicating a high molecular size. Moreover we could identify a single protein band from IN active fractions at 130-145 kDa corresponding to sizes of IN proteins from bacterial species. To our knowledge this is for the first time an isolation of a single protein from in vivo samples, which can be assigned as IN active from Fusarium.

  1. Optical emission of InAs nanowires

    International Nuclear Information System (INIS)

    Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

    2012-01-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

  2. Optical emission of InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

    2012-09-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

  3. Probing the influence of N-donor capping ligands on supramolecular assembly in molecular uranyl materials

    Energy Technology Data Exchange (ETDEWEB)

    Carter, Korey P.; Kalaj, Mark; Cahill, Christopher L. [Department of Chemistry, The George Washington University, Washington, DC (United States)

    2016-01-15

    The syntheses and crystal structures of six new compounds containing the UO{sub 2}{sup 2+} cation, 3,5-dichlorobenzoic acid, and a chelating N-donor [2,2'-bipyridine (bipy), 1,10-phenanthroline (phen), 4,7-dimethyl-1,10-phenanthroline (dimethylphen), 2,2{sup '}:6{sup '},2''-terpyridine (terpy), 4{sup '}-chloro-2,2{sup '}:6{sup '},2''-terpyridine (Cl-terpy), or 2,4,6-tris(2-pyridyl)-s-triazine (TPTZ)] are reported. Single-crystal X-ray diffraction analysis of these materials enabled the exploration of the structural relationship between the benzoic acids and the chelating N-donor as well as providing a platform to evaluate the effects of ligand choice on uranyl hydrolysis and subsequent oligomerization. At an unadjusted pH (ca. 3), a mix of uranyl monomers and dimers are observed, dimer formation resulting from both bridging carboxylate linkers and hydroxo bridges. Assembly by halogen- and hydrogen-bonding interactions as well as π-π interactions was observed depending on the experimental conditions utilized. Further, spectroscopic characterization (both vibrational and luminescence) of complexes 1, 4, and 5 to explore the effects of the electron-donating ability of the capping ligand on the corresponding uranyl luminescence and vibrational spectra suggests that there is a relationship between the observed bathochromic shifts and the electron-donating ability of the capping ligands. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Probing the influence of N-donor capping ligands on supramolecular assembly in molecular uranyl materials

    International Nuclear Information System (INIS)

    Carter, Korey P.; Kalaj, Mark; Cahill, Christopher L.

    2016-01-01

    The syntheses and crystal structures of six new compounds containing the UO 2 2+ cation, 3,5-dichlorobenzoic acid, and a chelating N-donor [2,2'-bipyridine (bipy), 1,10-phenanthroline (phen), 4,7-dimethyl-1,10-phenanthroline (dimethylphen), 2,2 ' :6 ' ,2''-terpyridine (terpy), 4 ' -chloro-2,2 ' :6 ' ,2''-terpyridine (Cl-terpy), or 2,4,6-tris(2-pyridyl)-s-triazine (TPTZ)] are reported. Single-crystal X-ray diffraction analysis of these materials enabled the exploration of the structural relationship between the benzoic acids and the chelating N-donor as well as providing a platform to evaluate the effects of ligand choice on uranyl hydrolysis and subsequent oligomerization. At an unadjusted pH (ca. 3), a mix of uranyl monomers and dimers are observed, dimer formation resulting from both bridging carboxylate linkers and hydroxo bridges. Assembly by halogen- and hydrogen-bonding interactions as well as π-π interactions was observed depending on the experimental conditions utilized. Further, spectroscopic characterization (both vibrational and luminescence) of complexes 1, 4, and 5 to explore the effects of the electron-donating ability of the capping ligand on the corresponding uranyl luminescence and vibrational spectra suggests that there is a relationship between the observed bathochromic shifts and the electron-donating ability of the capping ligands. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Dionizio Moreira, M [Divisao de Metrologia de Materiais (DIMAT), INMETRO, CEP 25250-020, Xerem, Duque de Caxias, RJ (Brazil); Venezuela, P [Instituto de Fisica, Universidade Federal Fluminense, Campus da Praia Vermelha, CEP 24210-240, Niteroi, RJ (Brazil); Miwa, R H [Instituto de Fisica, Universidade Federal de Uberlandia, C.P. 593, CEP 38400-902, Uberlandia, MG (Brazil)

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As{r_reversible}P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  6. 3,4-Dimethyl diphenyldithiophosphate of mononuclear cobalt(II) with N-donor ligands: Synthesis, structural characterization, DFT and antibacterial studies

    Science.gov (United States)

    Kumar, Sandeep; Kour, Gurpreet; Schreckenbach, Georg; Andotra, Savit; Hundal, Geeta; Sharma, Vishal; Jaglan, Sundeep; Pandey, Sushil K.

    2017-08-01

    3,4-Dimethyl diphenyldithiophosphate of cobalt(II) with N-donor ligands [{(ArO)2PS2}2CoL2] [Ar = 3,4-(CH3)2C6H3 (1-3); L = C5H5N (1), 3,4-(CH3)2C5H3N (2) and 4-(C2H5)C5H4N (3)] have been synthesized and characterized by elemental analyses, infrared spectroscopy (IR), powder X-ray diffraction (PXRD) and single crystal X-ray analysis. Complex 1 crystallizes in the monoclinic space group P21/n whereas complexes 2 and 3 crystallize in the triclinic space group Pbar1. The crystal structures of complexes 1-3 reveal mononuclear units with the Co(II) center chelated in bidentate fashion by four S atoms of the two diphenyldithiophosphate ligands. The N atoms from two donor ligands are axially coordinated, leading to distorted octahedral geometry around Co(II). The complexes have been optimized using density functional theory (DFT), structural parameters have been calculated, and the energy gaps of the frontier orbitals (HOMO-LUMO) have been predicted. Mayer bond orders have also been calculated. Structural parameters from the crystallographic and DFT studies are in good agreement with each other. To explore the biological potential, complexes were evaluated for their antibacterial activity against three bacterial strains. The bacterial growth inhibition capacity of the ligand and complexes followed the order of 3 > 2 > 1 > L1.

  7. Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers.

    Science.gov (United States)

    Hu, Dongzhi; McPheeters, Claiborne Co; Yu, Edward T; Schaadt, Daniel M

    2011-01-12

    A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density. A set of four samples were compared: InAs QDs without in situ annealing with and without AlAs cap layer and InAs QDs in situ annealed with and without AlAs cap layer. Atomic force microscopy measurements show that when in situ annealing of QDs without AlAs capping layers is investigated, holes and dashes are present on the device surface, while capping with one monolayer AlAs improves the device surface. On unannealed samples, capping the QDs with one monolayer of AlAs improves the spectral response, the open-circuit voltage and the fill factor. On annealed samples, capping has little effect on the spectral response but reduces the short-circuit current, while increasing the open-circuit voltage, the fill factor and power conversion efficiency.

  8. Electrical characterization of InAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Botha, L.; Shamba, P.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2008-07-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10{sup 18} cm{sup -3}) to strongly p-doped (p{proportional_to}10{sup 19} cm{sup -3}) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Electrical characterization of InAs thin films

    International Nuclear Information System (INIS)

    Botha, L.; Shamba, P.; Botha, J.R.

    2008-01-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10 18 cm -3 ) to strongly p-doped (p∝10 19 cm -3 ) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Role of N-Donor Sterics on the Coordination Environment and Dimensionality of Uranyl Thiophenedicarboxylate Coordination Polymers

    Energy Technology Data Exchange (ETDEWEB)

    Thangavelu, Sonia G. [Department; Butcher, Ray J. [Department; Cahill, Christopher L. [Department

    2015-06-09

    Thiophene 2,5-dicarboxylic acid (TDC) was reacted with uranyl acetate dihydrate and one (or none) of six N-donor chelating ligands (2,2'-bipyridine (BPY), 4,4'-dimethyl-2,2'-bipyridine (4-MeBPY), 5,5'-dimethyl-2,2'-bipyridine (5-MeBPY), 6,6'-dimethyl-2,2'-bipyridine (6-MeBPY), 4,4',6,6'-tetramethyl-2,2'-bipyridine (4,6-MeBPY), and tetrakis(2-pyridyl)pyrazine (TPPZ) to result in the crystallization of seven uranyl coordination polymers, which were characterized by their crystal structures and luminescence properties. The seven coordination polymers, Na2[(UO2)2(C6H2O4S)3]·4H2O (1), [(UO2)4(C6H2O4S)5(C10H8N2)2]·C10H10N2·3H2O (2), [(UO2)(C6H2O4S)(C12H12N3)] (3), [(UO2)(C6H2O4S)(C12H12N3)]·H2O (4), [(UO2)2(C6H2O4S)3]·(C12H14N2)·5H2O (5), [(UO2)3(CH3CO2)(C6H2O4S)4](C14H17N2)3·(C14H16N2)·H2O (6), and [(UO2)2(C6H2O4S)3](C24H18N6) (7), consist of either uranyl hexagonal bipyramidal or pentagonal bipyramidal coordination geometries. In all structures, structural variations in the local and global structures of 1–7 are influenced by the positions (or number) of methyl groups or pyridyl rings on the N-donor species, thus resulting in a wide diversity of structures ranging from single chains, double chains, or 2-D sheets. Direct coordination of N-donor ligands to uranyl centers is observed in the chain structures of 2–4 using BPY, 4-MeBPY, and 5-MeBPY, whereas the N-donor species participate as guests (as either neutral or charge balancing species) in the chain and sheet structures of 5–7 using 6-MeBPY, 4,6-MeBPY, and TPPZ, respectively. Compound 1 is the only structure that does not contain any N-donor ligands and thus crystallizes as a 2-D interpenetrating sheet. The luminescent properties of 1–7 are influenced by the direct coordination or noncoordination of N-donor species to uranyl centers. Compounds 2–4 exhibit typical UO22+ emission upon direct coordination of N-donors, but its absence is observed in 1

  11. Growth and electrical characterization of Zn-doped InAs and InAs1-xSbx

    International Nuclear Information System (INIS)

    Venter, A.; Shamba, P.; Botha, L.; Botha, J.R.

    2009-01-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs 1-x Sb x layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs 1-x Sb x epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  12. N6-Benzyladenosine Derivatives as Novel N-Donor Ligands of Platinum(II Dichlorido Complexes

    Directory of Open Access Journals (Sweden)

    Ján Vančo

    2013-06-01

    Full Text Available The platinum(II complexes trans-[PtCl2(Ln2]∙xSolv 1–13 (Solv = H2O or CH3OH, involving N6-benzyladenosine-based N-donor ligands, were synthesized; Ln stands for N6-(2-methoxybenzyladenosine (L1, involved in complex 1, N6-(4-methoxy-benzyladenosine (L2, 2, N6-(2-chlorobenzyladenosine (L3, 3, N6-(4-chlorobenzyl-adenosine (L4, 4, N6-(2-hydroxybenzyladenosine (L5, 5, N6-(3-hydroxybenzyl-adenosine (L6, 6, N6-(2-hydroxy-3-methoxybenzyladenosine (L7, 7, N6-(4-fluoro-benzyladenosine (L8, 8, N6-(4-methylbenzyladenosine (L9, 9, 2-chloro-N6-(3-hydroxy-benzyladenosine (L10, 10, 2-chloro-N6-(4-hydroxybenzyladenosine (L11, 11, 2-chloro-N6-(2-hydroxy-3-methoxybenzyladenosine (L12, 12 and 2-chloro-N6-(2-hydroxy-5-methylbenzyladenosine (L13, 13. The compounds were characterized by elemental analysis, mass spectrometry, IR and multinuclear (1H-, 13C-, 195Pt- and 15N- and two-dimensional NMR spectroscopy, which proved the N7-coordination mode of the appropriate N6-benzyladenosine derivative and trans-geometry of the title complexes. The complexes 1–13 were found to be non-toxic in vitro against two selected human cancer cell lines (HOS and MCF7; with IC50 > 50.0 µM. However, they were found (by ESI-MS study to be able to interact with the physiological levels of the sulfur-containing biogenic biomolecule L-methionine by a relatively simple 1:1 exchange mechanism (one Ln molecule was replaced by one L-methionine molecule, thus forming a mixed-nitrogen/sulfur-ligand dichlorido-platinum(II coordination species.

  13. Entangled zinc-ditetrazolate frameworks involving in situ ligand synthesis and topological modulation by various secondary N-donor ligands

    International Nuclear Information System (INIS)

    Li Yunwu; Chen Weilin; Wang Yonghui; Li Yangguang; Wang Enbo

    2009-01-01

    The introduction of various secondary N-donor ligands into an in situ ditetrazolate-ligand synthesis system of terephthalonitrile, NaN 3 and ZnCl 2 led to the formation of three new entangled frameworks Zn(pdtz)(4,4'-bipy).3H 2 O (1), [Zn(pdtz)(bpp)] 2 .3H 2 O (2) and Zn(pdtz) 0.5 (N 3 )(2,2'-bipy) (3) (4,4'-bipy=4,4'-bipyridine; bpp=1,3-bis(4-pyridyl)propane; 2,2'-bipy=2,2'-bipyridine; H 2 pdtz=5,5'-1,4-phenylene-ditetrazole). The formation of pdtz 2- ligand involves the Sharpless [2+3] cycloaddition reaction between terephthalonitrile and NaN 3 in the presence of Zn 2+ ion as a Lewis-acid catalyst under hydrothermal conditions. Compound 1 exhibits a fivefold interpenetrating 3D framework based on the diamondoid topology. Compound 2 displays a twofold parallel interpenetrating framework based on the wavelike individual network. Compound 3 possesses a 2D puckered network. These new Zn-ditetrazolate frameworks are highly dependent on the modulation of different secondary N-donor ligands. Their luminescent properties were investigated. - Graphical abstract: Three new entangled frameworks were prepared by an in situ ditetrazolate-ligand synthesis system assisted with various auxiliary N-donor ligands. The entangled structures can be modulated by different secondary ligands.

  14. Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

    Science.gov (United States)

    Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

    2017-11-01

    Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

  15. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy

    Science.gov (United States)

    Averett, K. L.; Wu, X.; Koch, M. W.; Wicks, G. W.

    2003-04-01

    Two advances in InAs-based bipolar transistor technology are reported. Metamorphic InAs bipolar junction transistors (BJTs), grown on semi-insulating GaAs substrates, are reported for the first time, showing current gains comparable to similar structures grown homoepitaxially on InAs substrates. Measurements by atomic force microscopy report root-mean-square surface roughness as low as 0.661 nm, for a metamorphic BJT structure with a 5 μm thick InAs buffer. The quality of the epitaxial structure was investigated as a function of the buffer layer thickness, by measuring the reverse-leakage current density of metamorphic BJTs of 1, 2, and 5 μm InAs buffer layers, showing improved electrical characteristics with increasing buffer layer thickness. A second technological advance is also reported, concerning the development of a heterojunction bipolar transistor (HBT), with a strained, pseudomorphic InAs 1- yP y ternary for the wide-gap emitter. The common emitter current gain of a control BJT device was measured at β=110, and the HBT device, of identical doping structure achieved β=180.

  16. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    International Nuclear Information System (INIS)

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  17. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  18. CO2 activation through silylimido and silylamido zirconium hydrides supported on N-donor chelating SBA15 surface ligand

    KAUST Repository

    Pasha, Fahran Ahmad

    2016-01-04

    Density functional theory calculations and 2D 1H-13C HETCOR solid state NMR spectroscopy prove that CO2 can probe, by its own reactivity, different types of N-donor surface ligands on SBA15-supported ZrIV hydrides: [(≡Si-O-)(≡Si-N=)[Zr]H] and [(≡Si-NH-)(≡Si-X-)[Zr]H2] (X = O or NH). Moreover, [(≡Si-O-)(≡Si-N=)[Zr]H] activates CO2 more efficiently than the other complexes and leads to a carbimato Zr formate.

  19. X-ray diffraction analysis of InAs nanowires

    International Nuclear Information System (INIS)

    Davydok, Anton

    2013-01-01

    Semiconductor nanowires have attracted great interest as building blocks for future electronic and optoelectronic devices. The variability of the growth process opens the opportunity to control and combine the various properties tailoring for specific application. It was shown that the electrical and optical characteristics of the nanowires are strongly connected with their structure. Despite intensive research in this field, the growth process is still not fully understood. In particular, extensive real structure investigations are required. Most of the reports dedicated on the structural researches are based on the results of scanning electron microscopy (SEM) or transmission electron microscopy (TEM). SEM provides an image of the surface with nanostructures and is mainly used to describe the morphology of the sample, but it does not bring information about the internal structure, phase composition and defect structure. At the same time, the internal structure can be examined by TEM down to atomic scale. TEM image of good quality are very expensive due to the efforts in sample preparation and in localisation of a single object. All these aspects make the statistical structural analysis difficult. In the present work, X-ray diffraction analysis has been applied for structural investigation of InAs nanowires grown by different techniques. Using various X-ray diffraction geometries, the nanowire systems were investigated in terms of the lattice parameters, phase composition, strains and displacement fields and stacking defects. In particular, realizing grazing incidence diffraction and controlling the penetration depth of X-ray beam, we characterized sample series grown by Au-assisted metal organic phase epitaxy on GaAs [111]B substrate with different growth time. According to the results of SEM and X-ray investigations, a model of the growth process has been proposed. A more detailed analysis was performed on InAs nanowires grown by molecular beam epitaxy (MBE) on

  20. Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

    2011-01-01

    In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

  1. Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

    Energy Technology Data Exchange (ETDEWEB)

    Hu Dongzhi

    2007-02-13

    The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

  2. Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

    International Nuclear Information System (INIS)

    Hu Dongzhi

    2007-01-01

    The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

  3. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates

    Science.gov (United States)

    Aagesen, Martin; Johnson, Erik; Sørensen, Claus B.; Mariager, Simon O.; Feidenhans'l, Robert; Spiecker, Erdmann; Nygård, Jesper; Lindelof, Poul Erik

    2007-12-01

    Free-standing nanostructures such as suspended carbon nanotubes, graphene layers, III-V nanorod photonic crystals and three-dimensional structures have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics. Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements. The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications.

  4. InAs based terahertz quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael; Schönhuber, Sebastian; Unterrainer, Karl [Photonics Institute and Center for Micro- and Nanostructures, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Vienna (Austria); Zederbauer, Tobias; Schrenk, Werner; Andrews, Aaron Maxwell; Strasser, Gottfried [Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universität Wien, Floragasse 7, 1040 Vienna (Austria); Detz, Hermann [Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Vienna (Austria)

    2016-01-04

    We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.

  5. Past and Present Development of INA's Liberalisation and Privatisation

    International Nuclear Information System (INIS)

    Lesic, A.; Stimac, B.

    2001-01-01

    The paper deals with the historical development aspects of the Croatian oil and gas industry INA. It describes the period from the very start of oil and gas production to the data of establishment of the Croatian state and afterwards. Some important milestones and political and economic events that impacted the development of the Croatian oil industry are described and commented, including changes toward liberalisation and privatisation of the oil and gas sector. The paper emphasises the role of INA in the Croatian economy and proposes some solutions for the liberalisation process and privatisation of the company that could prevent undesirable effects of privatisation and protect the interests of Croatia in the energy sector which is one of the main sectors of economy having influence on other production and service sectors and their competitiveness.(author)

  6. INA's Preparations for Liberalised Energy Market and Privatisation

    International Nuclear Information System (INIS)

    Dragicevic, T.; Kolundzic, S.

    2001-01-01

    Before opening of the market, energy entities must carry out numerous preparations in order to be ready for challenges of a competitive environment. Some preparations refer to legal and organisational issues, but many of them encompass reengineering of business processes, cost reduction schemes and various improvement measures aimed at maintenance or acquisition of a competitive advantage. INA is actively pursuing some of the above measures, but now, by the end of 2001, we also have to deal with preparations for privatisation. These two processes have some important common elements, competitiveness being certainly one of them. INA must work toward improving its competitive strength in the gas sector, in refining, in marketing of oil products, but also in various supporting activities. However, there are constraints that we have to observe, mainly related to social issues.(author)

  7. 22 CFR 40.68 - Aliens subject to INA 222(g).

    Science.gov (United States)

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

  8. Komunikační mix Svatebního salonu INA

    OpenAIRE

    Rybníčková, Michala

    2015-01-01

    Rybníčková, M. Marketing mix for Wedding Boutique INA. Bachelor thesis, Brno: Mendel university in Brno, 2015 This Bechelor thesis focuses on the marketing mix for the company Wedding Boutique INA. Survey results are used to evaluate the effectiveness of marketing tools currently used by INA. Furthermore, the results are used to recommend improvements to the marketing mix. Thesis also includes calculation of costs and scheduling for the year 2015.

  9. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs /InAs1 -xSbx

    Science.gov (United States)

    Liu, Henan; Zhang, Yong; Steenbergen, Elizabeth H.; Liu, Shi; Lin, Zhiyuan; Zhang, Yong-Hang; Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch; Dupuis, Russell D.; Kim, Jin K.; Hawkins, Samuel D.; Klem, John F.

    2017-09-01

    The InAs /InAs1 -xSbx superlattice system distinctly differs from two well-studied superlattice systems GaAs /AlAs and InAs /GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs /InAs1 -xSbx system when compared to the other two systems. In this work, we report a polarized Raman study of the vibrational properties of the InAs /InAs1 -xSbx superlattices (SLs) as well as selected InAs1 -xSbx alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like "forbidden" LO mode is observed in two parallel-polarization configurations. The InAs1 -xSbx alloys lattice matched to the substrate (xSb˜0.09 ) grown by MBE are also found to exhibit the forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (xSb˜0.35 ) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs /InAs1 -xSbx and InAs /GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of the forbidden LO-like mode is a universal signature for SLs and bulk systems resulting from the mixing of phonon modes due to structural

  10. Strong composition-dependent disorder in InAs1-xNx alloys

    International Nuclear Information System (INIS)

    Benaissa, H.; Zaoui, A.; Ferhat, M.

    2009-01-01

    We investigate the main causes of disorder in the InAs 1-x N x alloys (x = 0, 0.03125, 0.0625, 0.09375, 0.125, 0.25, 0.5, 0.75, 0.875, 0.90625, 0.9375, 0.96875 and 1). The calculation is based on the density-functional theory in the local-density approximation. We use a plane wave-expansion non-norm conserving ab initio Vanderbilt pseudopotentials. To avoid the difficulty of considering the huge number of atomic configurations, we use an appropriate strategy in which we consider four configurations for a given composition where the N atoms are not randomly distributed. We mainly show that the band gap decreases (increases) rapidly with increasing (decreasing) compositions of N. As a consequence the optical band gap bowing is found to be strong and composition dependent. The obtained compounds, from these alloys, may change from semi-conducting to metal (passing to a negative bowing) and could be useful for device applications, especially at certain composition.

  11. 20 CFR 668.340 - What are INA grantee allowable activities?

    Science.gov (United States)

    2010-04-01

    ... Customers § 668.340 What are INA grantee allowable activities? (a) The INA grantee may provide any services...; (3) Orientation to services available; (4) Initial assessment of skill levels, aptitudes, abilities... and skill competencies; (2) Adult mentoring; (3) Training opportunities; (4) Supportive services, as...

  12. 20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

    Science.gov (United States)

    2010-04-01

    ... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

  13. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

    2016-01-01

    on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle...

  14. One-dimensional quantum confinement effect modulated thermoelectric properties in InAs nanowires.

    Science.gov (United States)

    Tian, Yuan; Sakr, Mohammed R; Kinder, Jesse M; Liang, Dong; Macdonald, Michael J; Qiu, Richard L J; Gao, Hong-Jun; Gao, Xuan P A

    2012-12-12

    We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with a diameter around 20 nm is obtained over T = 40-300 K. At low temperatures (T energy level broadening as the limiting factor in smearing out the 1D confinement enhanced thermoelectric power factor.

  15. Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

    International Nuclear Information System (INIS)

    Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

    2013-01-01

    We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

  16. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  17. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ju Young [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Laser-IT Research Center, Korea Photonics Technology Institute, GwangJu 500-779 (Korea, Republic of); Song, Jin Dong, E-mail: jdsong@kist.re.kr [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yang, Hae Suk, E-mail: hsyang@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2012-08-31

    In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of {approx} 0.5 {mu}m above which the structural and transport qualities of the film are considerably enhanced. The resultant 2.60-{mu}m-thick InSb layer, grown at the substrate temperature of 400 Degree-Sign C and under the Sb flux of 1.5 Multiplication-Sign 10{sup -6} Torr, shows the electron mobility as high as 67,890 cm{sup 2}/Vs. - Highlights: Black-Right-Pointing-Pointer InSb films are grown on GaAs substrate by molecular beam epitaxy. Black-Right-Pointing-Pointer Intermediate layer of InAs quantum dots is inserted at GaAs/InSb interface. Black-Right-Pointing-Pointer Structural and transport properties of InSb are enhanced with InAs quantum dots. Black-Right-Pointing-Pointer Electron mobility over 50,000 cm{sup 2}/Vs is achieved within 1-{mu}m thickness of InSb.

  18. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Henegar, A.J., E-mail: henegar1@umbc.edu; Gougousi, T., E-mail: gougousi@umbc.edu

    2016-12-30

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and TiO{sub 2} is compared. Al{sub 2}O{sub 3} if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al{sub 2}O{sub 3} ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al{sub 2}O{sub 3} limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al{sub 2}O{sub 3} and TiO{sub 2}, using H{sub 2}O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al{sub 2}O{sub 3} ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO{sub 2} and the native oxides continues well after the surface has been covered with 2 nm of TiO{sub 2}. This difference is traced to the superior properties of Al{sub 2}O{sub 3} as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to

  19. Adsorbed layers on (111)InAs faces in contact with In-As-Cl-H gas phase, and the possibility of phase transitions in the adsorbed layers

    Science.gov (United States)

    Chernov, A. A.; Ruzaikin, M. P.

    1981-04-01

    Adsorption of various species existing in the In-As-Cl-H CVD gaseous system on both InAs (111) faces is considered. Arsenic is supposed to be adsorbed in the form of triangles As 3 and tetrahedrons As 4, each of them occupying 3 atomic sites above In or As atoms on (111)In or (111)As, respectively. The system of polyatomic adsorption equations was used to find the coverages of the faces by various species. Admolecule-surface bond strengths are taken to be equal to the ones for the single bonds in molecules. Pauling electronegativities were used to find the effective charges of the atoms in the adsorption layer. Thus, the dipole moments of adsorbed molecules which arise are directed along the In-As bonds in the InAs lattice. With this geometry, the calculated electrostatic dipole-dipole attraction between InCl molecules forming a dense layer on (111)As exceeds 12 kcal/mol. Thus, condensation of the two-dimensional gas of adsorbed InCl molecules should be expected. Corresponding S-shape isotherms θ( P) are calculated for different As 3 vapor pressures, θ and P being the surface coverage and bulk vapor pressure of InCl. Intervals of {InCl 3}/{H 2} ratios at different temperatures where the two-dimensional condensation may occur, are presented for realistic CVD conditions. Two-dimensional condensation may result in sharp changes in kinetic coefficient and thus in autho-oscillations in growth rate and doping level creating periodic superstructures. Nucleation and CVD growth processes are discussed.

  20. Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

    Science.gov (United States)

    Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

    2008-07-01

    This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

  1. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

    International Nuclear Information System (INIS)

    Usman, Muhammad; O’Reilly, Eoin P; Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana; Klimeck, Gerhard

    2012-01-01

    III–V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In–Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response. (paper)

  2. Mere zaštite pri eksploataciji mašina i opreme za aplikaciju pesticida

    OpenAIRE

    Dimitrovski, Zoran; Kukutanov, Risto; Gligorevic, Kosta; Oljaca, Mico

    2016-01-01

    Direktiva 2009/128/EC Evropskog parlamenta određuje okvir za sprovođenje Nacionalnog akcionog plana u svakoj državi, koji se odnosi na održljivoj upotrebi pesticida. Jedan deo directive dierktno uređuje upotrebu mašina i opreme za aplikaciju pesticida kao i njihovo pravilno i bezbedno korištenje. Imajuči u vidu da u Republici Makedoniji inspekcija i obuka farmera za pravilno i bezbedno korištenje ovih mašina nisu obavezne, javljaju se problemi oko održavanja mašina i trovanj...

  3. Self-Assembled InAs Nanowires as Optical Reflectors.

    Science.gov (United States)

    Floris, Francesco; Fornasari, Lucia; Marini, Andrea; Bellani, Vittorio; Banfi, Francesco; Roddaro, Stefano; Ercolani, Daniele; Rocci, Mirko; Beltram, Fabio; Cecchini, Marco; Sorba, Lucia; Rossella, Francesco

    2017-11-21

    Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

  4. Direct Observation of Acoustic Oscillations in InAs Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mariager, Simon O.; Khakhulin, Dmitry; Lemke, Henrik T.; Kjær, Kasper S.; Guerin, Laurent; Nuccio, Laura; Sørensen, Claus B.; Nielsen, Martin M.; Feidenhans’l, Robert (Copenhagen); (ESRF)

    2010-09-02

    Time-resolved X-ray diffraction and optical reflectivity are used to directly measure three different acoustic oscillations of InAs nanowires. The oscillations are excited by a femtosecond laser pulse and evolve at three different time scales. We measure the absolute scale of the initial radial expansion of the fundamental breathing eigenmode and determine the frequency by transient optical reflectivity. For the extensional eigenmode we measure the oscillations of the average radial and axial lattice constants and determine the amplitude of oscillations and the average extension. Finally we observe a bending motion of the nanowires. The frequencies of the eigenmodes are in good agreements with predictions made by continuum elasticity theory and we find no difference in the speed of sound between the wurtzite nanowires and cubic bulk crystals, but the measured strain is influenced by the interaction between different modes. The wurtzite crystal structure of the nanowires however has an anisotropic thermal expansion.

  5. Optoelectronic properties of individually positioned InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Overbeck, Jan; Brenneis, Andreas; Treu, Julian; Hertenberger, Simon; Abstreiter, Gerhard; Koblmueller, Gregor; Holleitner, Alexander [Walter Schottky Institut and Physik-Department, TU Muenchen, 85748 Garching (Germany)

    2013-07-01

    Small bandgap semiconducting nanowires offer a promising approach to fabricating nanoscale light-sensitive devices like broadband solar cells or mid-infrared photodetectors. We discuss the optoelectronic properties of individually positioned InAs nanowires on p-Si(111) substrates. The substrates exhibit a top layer of SiO{sub 2} which is structured via e-beam lithography creating holes in the oxide with a diameter of ∝80 nm. The nanowires are then grown vertically on the patterned substrates by solid-source molecular beam epitaxy. To fabricate optoelectronic devices, the nanowires are subsequently contacted via a thin, semitransparent metal film evaporated on top of an insulating layer (BCB). The p-Si substrate forms the second contact of the optoelectronic two-terminal devices. We discuss spatially resolved photocurrent measurements which give insights into the interplay of optoelectronic dynamics in single nanowires and in the Si-substrates.

  6. Equilibrium studies on some binary complexes of La(III), Ce(III), Pr(III) and Nd(III) with ligands containing N-N donor atoms

    International Nuclear Information System (INIS)

    Pabreja, D.S.; Patel, Rashmikant A.; Sharma, Sangita; Vora, Jabali; Joshi, J.D.

    2001-01-01

    The present paper describes a potentiometric study on formation constants of binary complexes of inner transition 4f metal ions La(III), Ce(III), Pr(III) and Nd(III) with amines such as ethylenediamine, N-N-dimethyl ethylenediamine, N-N-diethyl ethylenediamine, 1,2-diaminopropane and 1,3-diaminopropane carried out at constant temperature 30± 0.1deg C and ionic strength μ 0.2 M dm -3 (NaClO 4 ). Various factors influencing the formation and stabilities of binary complexes have been discussed. (author)

  7. Synthesis and photoluminescence properties of silver(I) complexes based on N-benzoyl-L-glutamic acid and N-donor ligands with different flexibility

    Science.gov (United States)

    Yan, Ming-Jie; Feng, Qi; Song, Hui-Hua

    2016-05-01

    By changing the N-donor ancillary ligand, three novel silver (I) complexes {[Ag(HbzgluO) (4,4‧-bipy)]·H2O}n (1), {[Ag2(HbzgluO)2 (bpe)2]·2H2O}n (2) and {[Ag(HbzgluO)(bpp)]·2H2O}n (3) (H2bzgluO = N-benzoyl-L-glutamic acid, 4,4‧-bipy = 4,4ˊ-bipyridine, bpe = 1,2-di(4-pyridyl)ethane, bpp = 1,3-di(4-pyridyl)propane) were synthesized. Their structures have been determined by single-crystal X-ray diffraction analyses and further characterized by elemental analyses, IR spectra, powder X-ray diffraction (PXRD), and thermogravimetric analyses (TGA). In this study, the N-donor ligands are changed from rigidity (4,4‧-bipy), quasi-flexibility (bpe) to flexibility (bpp), the structures of complexes also change. Complex 1 features a 1D chain structure which is further linked together to construct a 2D supramolecular structure through hydrogen bonds. Complex 2 is a 1D double-chains configuration which eventually forms a 3D supramolecular network via hydrogen bonding interactions. Whereas, complex 3 exhibits a 2D pleated grid structure which is linked by hydrogen bonding interactions into a 3D supramolecular network. The present observations demonstrate that the modulation of coordination polymers with different structures can accomplish by changing the spacer length of N-donor ligands. In addition, the solid-state circular dichroism (CD) spectra indicated that compound 2 exhibited negative cotton effect which originated from the chiral ligands H2bzgluO and the solid-state fluorescence spectra of the three complexes demonstrated the auxiliary ligands have influence on the photoluminescence properties of the complexes.

  8. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  9. Defect reaction network in Si-doped InAs. Numerical predictions.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-05-01

    This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulk InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank

  10. Electrical characterisation of Sn doped InAs grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2008-07-01

    The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10{sup 17} and 4.7 x 10{sup 19} cm{sup -3} with 77 K mobilities ranging from 12 000 to 1300 cm{sup 2}/Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Synthesis, crystal structures, and properties of two novel cadmium(II)-organic frameworks based on asymmetric dicarboxylate and N-donor ligands

    Science.gov (United States)

    Chen, Xiaoli; Gao, Loujun; Zhang, Xiaoge; Han, Xuhua; Wang, Yao; Sun, Rong

    2014-08-01

    Two novel cadmium(II)-organic frameworks with asymmetric dicarboxylate and N-donor ligands, namely [Cd(cpa)(phen)]n (1) and {[Cd2(cpa)2(bpy)1.5]·0.5H2O}n (2) (H2cpa = 3-(4-benzoic)propionic acid, phen = 1,10-phenanthroline, bpy = 4,4";-bipyridine) have been hydrothermally synthesized and characterized by elemental analyses, FT-IR spectra, single-crystal X-ray diffraction analyses, TGA, powder XRD and fluorescent measurements. 1 displays a double zigzag chain structure containing 8-number and 22-number circles. 2 Shows a 6-connected 3D polymer network based on tetranuclear cadmium cluster units. The most striking feature of 2 is that a pair of identical 3D networks are interlocked with each other to the form a 2-fold interpenetrated 3D α-Po structural topology. The diverse structures of two complexes indicate that the skeleton of N-donor ligands plays a great role in the assembly of such different frameworks. In addition, the thermal stabilities, XRD and photoluminescence properties of 1-2 were also studied.

  12. Studies on the controlled growth of InAs nanostructures on scission surfaces; Untersuchungen zum kontrollierten Wachstum von InAs-Nanostrukturen auf Spaltflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, J.

    2006-01-15

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {l_brace}110{r_brace}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {l_brace}110{r_brace}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  13. Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

    Science.gov (United States)

    Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-04-01

    Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si-based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and etching behaviors of InAs (100) in various acidic and basic solutions, such as HF, HCl, H2SO4, NaOH, KOH, and NH4OH, were investigated. In addition, the effect of pH on the oxidation and etching reactions taking place on the InAs surface was studied using solutions with a pH ranging from 1 to 13. It was observed that the oxidation of the InAs surface was hindered in acidic solutions, which was attributed to the dissolution of the oxidized surface layer. In particular, the treatment of the InAs surface using a strongly acidic solution with a pH of less than 3 produced an oxide-free surface due to the predominant etching of the InAs surface. The addition of H2O2 to the acidic solutions greatly increased the etching rate of the InAs surface, which suggests that the oxidation process is the rate-limiting step in the sequence of reactions that occur during the etching of the InAs surface in acidic solutions. The etching of InAs was suppressed in neutral solutions, which resulted in the formation of a relatively thicker oxide layer on the surface, and mild etching of the InAs surface took place in basic solutions. However, in basic solutions, the addition of H2O2 did not significantly contribute to the increase of the oxidation state of the InAs surface; thus, its effect on the etching rate of InAs was smaller than in acidic solutions.

  14. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

    CSIR Research Space (South Africa)

    Baisitse, TR

    2006-07-01

    Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

  15. Diverse Cd(II) compounds based on N-benzoyl-L-glutamic acid and N-donor ligands: Structures and photoluminescent properties

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ning; Guo, Wei-Ying; Song, Hui-Hua, E-mail: songhuihua@mail.hebtu.edu.cn; Yu, Hai-Tao, E-mail: haitaoyu@mail.hebtu.edu.cn

    2016-01-15

    Five new Cd(II) coordination polymers with N-benzoyl-L-glutamic acid (H{sub 2}bzgluO) and different N-donor ligands, [Cd(bzgluO)(2,2′-bipy)(H{sub 2}O)]{sub n} (1), [Cd(bzgluO)(2,4′-bipy){sub 2}(H{sub 2}O)·3H{sub 2}O]{sub n} (2), [Cd(bzgluO)(phen)·H{sub 2}O]{sub n} (3), [Cd(bzgluO)(4,4′-bipy)(H{sub 2}O)]{sub n} (4), [Cd(bzgluO)(bpp)(H{sub 2}O)·2H{sub 2}O]{sub n} (5) were synthesized (2,2′-bipy=2,2′-bipyridine, 2,4′-bipy=2,4′-bipyridine, phen=1,10-phenanthroline, 4,4′-bipy=4,4′-bipyridine, bpp=1,3-di(4-pyridyl)propane). Compounds 1–2 exhibit a 1D single-chain structure. Compound 1 generates a 2D supramolecular structure via π–π stacking and hydrogen bonding, 3D architecture of compound 2 is formed by hydrogen bonding. Compound 3 features a 1D double-chain structure, which are linked by π–π interactions into a 2D supramolecular layer. Compounds 4-5 display a 2D network structure. Neighboring layers of 4 are extended into a 3D supramolecular architecture through hydrogen bonding. The structural diversity of these compounds is attributed to the effect of ancillary N-donor ligands and coordination modes of H{sub 2}bzgluO. Luminescent properties of 1–5 were studied at room temperature. Circular dichroism of compounds 1, 2 and 5 were investigated. - Graphical abstract: Five new Cd(II) metal coordination compounds with H{sub 2}bzgluO and different N-donor ligands were synthesized and characterized. Compounds 1, 2 and 3 present 1D structures, compounds 4 and 5 display 2D networks. Results indicate that auxiliary ligands and coordination modes of H{sub 2}bzgluO play an important role in governing the formation of final frameworks, and the hydrogen-bonding and π–π stacking interactions contribute the formation of the diverse supramolecular architectures. Furthermore, the different crystal structures influence the emission spectra significantly. - Highlights: • It is rarely reported that complexes prepared with N-benzoyl-L-glutamic acid

  16. Electronic and optical properties of graphene-like InAs: An ab initio study

    Science.gov (United States)

    Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

    2018-03-01

    The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

  17. Diverse Cd(II) compounds based on N-benzoyl-L-glutamic acid and N-donor ligands: Structures and photoluminescent properties

    Science.gov (United States)

    Ma, Ning; Guo, Wei-Ying; Song, Hui-Hua; Yu, Hai-Tao

    2016-01-01

    Five new Cd(II) coordination polymers with N-benzoyl-L-glutamic acid (H2bzgluO) and different N-donor ligands, [Cd(bzgluO)(2,2‧-bipy)(H2O)]n (1), [Cd(bzgluO)(2,4‧-bipy)2(H2O)·3H2O]n (2), [Cd(bzgluO)(phen)·H2O]n (3), [Cd(bzgluO)(4,4‧-bipy)(H2O)]n (4), [Cd(bzgluO)(bpp)(H2O)·2H2O]n (5) were synthesized (2,2‧-bipy=2,2‧-bipyridine, 2,4‧-bipy=2,4‧-bipyridine, phen=1,10-phenanthroline, 4,4‧-bipy=4,4‧-bipyridine, bpp=1,3-di(4-pyridyl)propane). Compounds 1-2 exhibit a 1D single-chain structure. Compound 1 generates a 2D supramolecular structure via π-π stacking and hydrogen bonding, 3D architecture of compound 2 is formed by hydrogen bonding. Compound 3 features a 1D double-chain structure, which are linked by π-π interactions into a 2D supramolecular layer. Compounds 4-5 display a 2D network structure. Neighboring layers of 4 are extended into a 3D supramolecular architecture through hydrogen bonding. The structural diversity of these compounds is attributed to the effect of ancillary N-donor ligands and coordination modes of H2bzgluO. Luminescent properties of 1-5 were studied at room temperature. Circular dichroism of compounds 1, 2 and 5 were investigated.

  18. A series of coordination polymers constructed from R-isophthalic acid (R=–SO{sub 3}H, –NO{sub 2}, and –OH) and N-donor ligands: Syntheses, structures and fluorescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yong-Hong, E-mail: zhou21921@sina.com [School of Chemistry and Material Science, Huaibei Normal University, Huaibei 235000 (China); Zhou, Xu-Wan; Zhou, Su-Rong [School of Chemistry and Material Science, Huaibei Normal University, Huaibei 235000 (China); Tian, Yu-Peng; Wu, Jie-Ying [Department of Chemistry and Chemical Technology, Anhui University, Hefei 230039 (China)

    2017-01-15

    Six novel Zn(II), Cd(II), and Cu(II) mixed-ligand coordination complexes, namely, [Zn{sub 2}Na(sip){sub 2}(bpp){sub 3}(Hbpp)(H{sub 2}O){sub 2}]·8H{sub 2}O (1), [Cd{sub 3}(sip){sub 2}(nbi){sub 6}(H{sub 2}O){sub 2}]·7H{sub 2}O (2), [Zn(sip)(nbi){sub 2}(H{sub 2}O)]·Hnbi·3H{sub 2}O (3), [Cd(hip)(nbi){sub 2}(H{sub 2}O)]·nbi·5H{sub 2}O (4), [Cd{sub 2}(nip){sub 2}(nbi){sub 2}(H{sub 2}O){sub 2}]·DMF (5), and [Cu(nip)(nbi)(H{sub 2}O){sub 2}]·H{sub 2}O (6) (H{sub 3}sip=5-sulfoisophthalic acid, H{sub 2}hip=5-hydroxylisophthalic acid, H{sub 2}nip=5-nitroisophthalic acid, bpp=1,3-bis(4-pyridyl)propane, and nbi=6-nitrobenzimidazole) have been synthesized hydrothermally by the self-assembly of R-isophthalic acid (R=–SO{sub 3}H, –NO{sub 2}, and –OH) and N-donor ligands. Single crystal X-ray analyses reveal that two Zn(II) ions and one Na(I) ion of complex 1 are linked through O atoms to generate a 1D linear chain. Then the 2D supramolecular architectures are constructed via intermolecular interactions. In complex 2, the Cd1 ions are connected by bridging carboxyl groups from sip{sup 3−} anions to form 1D double chain, which are further connected by Cd2 ions to afford 2D layer structure. The adjacent 2D layers are further linked via hydrogen-bonding interactions to give 3D supramolecular network. Compounds 3–5 show 1D chain structures, which are assembled into 2D or 3D supramolecular frameworks via weak interactions. In compound 6, the Cu(II) ions are bridged by the nip{sup 2−} ligands to form 48-membered ring, which is assembled into 1Dchain via the π-π stacking interaction. In addition, the thermal stabilities and fluorescence properties of these compounds have also been studied. - Graphical abstract: A series of Cd(II)/Zn(II)/ Cu(II) coordination polymers based on R-isophthalic acid (R=–SO{sub 3}H, –NO{sub 2}, and –OH) and N-donor ligands have been synthesized under hydrothermal conditions and structurally characterized. Photoluminescent properties

  19. Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

    International Nuclear Information System (INIS)

    Anyebe, E.A.; Zhuang, Q.; Lawson, S.; Robson, A.J.; Kolosov, O.; Sanchez, A.M.; Ponomarenko, L.; Zhukov, A.

    2014-01-01

    We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

    International Nuclear Information System (INIS)

    Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

    2014-01-01

    Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

  1. The Congress and the INA Trials, 1945-50: a Contest over the Perception of ‘Nationalist’ Politics

    NARCIS (Netherlands)

    Alpes, M.J.

    2007-01-01

    Whilst during the war the Indian National Army (hereafter INA) could be charged with having been the ‘puppet army’ of a fascist regime, the INA was brought firmly into the realms of anti-colonial and nationalist discourse after the war. Despite its earlier very distanced position, the Congress chose

  2. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  3. Spin effects in InAs self-assembled quantum dots

    Directory of Open Access Journals (Sweden)

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  4. Hall and thermoelectric evaluation of p-type InAs

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  5. Hall and thermoelectric evaluation of p-type InAs

    International Nuclear Information System (INIS)

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  6. Temperature dependent properties of InSb and InAs nanowire field-effect transistors

    Science.gov (United States)

    Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes; Lind, Erik; Karlström, Olov; Wernersson, Lars-Erik

    2010-04-01

    We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

  7. CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH42Cr2O7−HBr−H2O ETCHING COMPOSITIONS

    Directory of Open Access Journals (Sweden)

    I. V. Levchenko

    2017-09-01

    Full Text Available The features of InAs, InSb, GaAs, and GaSb dissolution in the (NH42Cr2O7−HBr−H2O etching compositions have been investigated. The chemical-dynamic polishing in the reproducible hydrodynamic conditions has been used. It was established that the arsenides etching rate changed similarly and achieved the maximum values in the oxidant saturated mixture (22 vol.%. It was found that the antimonides dissolution rate increases when the (NH42Cr2O7 concentration is increasing also. It was established that all etching compositions are polishing for InAs and GaAs, and in the case of InSb and GaSb the polishing solutions occupy about 50 % of the investigated concentrated regions. It was shown that the dissolution rate of all crystals decreases to 0,1 μm/min and the quality of the antimonides surface degrades when the H2O concentration is increasing. The substrates dissolution has the diffusion nature. Using metallographic analysis and atomic force microscopy it was confirmed a good quality of InAs, InSb, GaAs and GaSb surface obtained after chemical treatment in the (NH42Cr2O7−HBr−H2O polishing solutions.

  8. Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

    International Nuclear Information System (INIS)

    Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

    2005-01-01

    We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

  9. Intrinsic quantum dots in InAs nanowires

    International Nuclear Information System (INIS)

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  10. Vertical Hole Transport and Carrier Localization in InAs /InAs1 -xSbx Type-II Superlattice Heterojunction Bipolar Transistors

    Science.gov (United States)

    Olson, B. V.; Klem, J. F.; Kadlec, E. A.; Kim, J. K.; Goldflam, M. D.; Hawkins, S. D.; Tauke-Pedretti, A.; Coon, W. T.; Fortune, T. R.; Shaner, E. A.; Flatté, M. E.

    2017-02-01

    Heterojunction bipolar transistors are used to measure vertical hole transport in narrow-band-gap InAs /InAs1 -xSbx type-II superlattices (T2SLs). Vertical hole mobilities (μh) are reported and found to decrease rapidly from 360 cm2/V s at 120 K to approximately 2 cm2/V s at 30 K, providing evidence that holes are confined to localized states near the T2SL valence-miniband edge at low temperatures. Four distinct transport regimes are identified: (1) pure miniband transport, (2) miniband transport degraded by temporary capture of holes in localized states, (3) hopping transport between localized states in a mobility edge, and (4) hopping transport through defect states near the T2SL valence-miniband edge. Region (2) is found to have a thermal activation energy of ɛ2=36 meV corresponding to the energy range of a mobility edge. Region (3) is found to have a thermal activation energy of ɛ3=16 meV corresponding to the hopping transport activation energy. This description of vertical hole transport is analogous to electronic transport observed in disordered amorphous semiconductors displaying Anderson localization. For the T2SL, we postulate that localized states are created by disorder in the group-V alloy of the InAs1 -xSbx hole well causing fluctuations in the T2SL valence-band energy.

  11. Low radiation level detection with room temperature InAs detector

    Science.gov (United States)

    Makai, Janos P.; Makai, Tamas

    2014-08-01

    Recently, room temperature or near room temperature InAs detectors are widely used in laser warning receivers, process control monitors, temperature sensors, etc. requiring linear operation over many decades of the sensitivity range. The linearity of zero biased Si, InGaAs and Ge detectors is thoroughly discussed in the literature, contrary to InAs detectors. In an earlier work of the authors it has been demonstrated that applying a bootstrap circuit to a Ge detector - depending on the frequency of the operation - will virtually increase the shunt resistance of the detector by 3-6 decades compared to the detector alone. In the present work, a similar circuitry was applied to a room temperature InAs detector, the differences between the bootstrapped Ge and bootstrapped InAs detector are underlined. It is shown, how the bootstrap circuit channels the photogenerated current to the feedback impedance decreasing with many decades the detectable low level limit of the detector - I/V converter unit. The linearity improvement results are discussed as a function of the chopping frequency, calculated and measured values are compared, the noise sources are analyzed and noise measurement results are presented.

  12. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.

    Science.gov (United States)

    Tomioka, Katsuhiro; Izhizaka, Fumiya; Fukui, Takashi

    2015-11-11

    III-V compound semiconductor and Ge are promising channel materials for future low-power and high-performance integrated circuits. A heterogeneous integration of these materials on the same platform, however, raises serious problem owing to a huge mismatch of carrier mobility. We proposed direct integration of perfectly vertically aligned InAs nanowires on Ge as a method for new alternative integrated circuits and demonstrated a high-performance InAs nanowire-vertical surrounding-gate transistor. Virtually 100% yield of vertically aligned InAs nanowires was achieved by controlling the initial surface of Ge and high-quality InAs nanowires were obtained regardless of lattice mismatch (6.7%). The transistor performance showed significantly higher conductivity with good gate control compared to Si-based conventional field-effect transistors: the drain current was 0.65 mA/μm, and the transconductance was 2.2 mS/μm at drain-source voltage of 0.50 V. These demonstrations are a first step for building alternative integrated circuits using vertical III-V/multigate planar Ge FETs.

  13. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  14. Towards quantitative three-dimensional characterisation of InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Kuznetsova, Nadezda

    2011-01-01

    InAs quantum dots (QDs) grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such QDs are highly dependent on their three-dimensional structural and chemical profiles...

  15. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

    DEFF Research Database (Denmark)

    Krizek, Filip; Kanne, Thomas; Razmadze, Davydas

    2017-01-01

    Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanis...

  16. Prediction of Disease Case Severity Level To Determine INA CBGs Rate

    Science.gov (United States)

    Puspitorini, Sukma; Kusumadewi, Sri; Rosita, Linda

    2017-03-01

    Indonesian Case-Based Groups (INA CBGs) is case-mix payment system using software grouper application. INA CBGs consisting of four digits code where the last digits indicating the severity level of disease cases. Severity level influence by secondary diagnosis (complications and co-morbidity) related to resource intensity level. It is medical resources used to treat a hospitalized patient. Objectives of this research is developing decision support system to predict severity level of disease cases and illustrate INA CBGs rate by using data mining decision tree classification model. Primary diagnosis (DU), first secondary diagnosis (DS 1), and second secondary diagnosis (DS 2) are attributes that used as input of severity level. The training process using C4.5 algorithm and the rules will represent in the IF-THEN form. Credibility of the system analyzed through testing process and confusion matrix present the results. Outcome of this research shows that first secondary diagnosis influence significant to form severity level predicting rules from new disease cases and INA CBGs rate illustration.

  17. Physical processes of current gain in InAs bipolar junction transistors

    Science.gov (United States)

    Wu, X.; Averett, K. L.; Maimon, S.; Koch, M. W.; Wicks, G. W.

    2004-01-01

    InAs bipolar junction transistors (BJTs), grown by molecular beam epitaxy, are reported with common emitter current gains ( β's) as large as 400. The factors affecting the common emitter current gain have been studied by estimating the magnitudes of the base transport factor ( αT) and emitter injection efficiency ( γ). This has been accomplished by studying a sequence of InAs BJTs with varying emitter doping densities, NE. Minority carrier diffusion length in the base ( LB), αT, and γ have been extracted from measured electrical characteristics. The results of the study of these InAs BJTs are as follows: L B≈0.4 μm, αT≈98% and γ ranges from 92% to nearly 100% depending on NE. This knowledge of the magnitudes of the injection efficiencies suggests when it would be useful to move from the simple BJT structure to the more advanced heterojunction bipolar transistor (HBT) structure. Lower γ BJTs would be improved, however high- γ BJTs would benefit little, by the use of the widegap emitters of HBTs. The method developed here to estimate γ, αT and LB is not specific to InAs BJTs, but should be useful for study of BJTs and HBTs in any material system.

  18. Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

    National Research Council Canada - National Science Library

    Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

    2005-01-01

    .... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

  19. Surface Reconstruction Phase Diagrams for InAs, AlSb, and GaSb

    National Research Council Canada - National Science Library

    Bracker, A. S; Yang, M. J; Bnnett, B. R; Culbertson, J. C; Moore, W. J

    2000-01-01

    ... for optimizing growth conditions. Phase boundaries for InAs (0 0 1) [(2*4)->(4*2)], AlSb (0 0 1) [c(4*4)->(1*3)], and GaSb (0 0 1) [(2*5)_>(1*3)] are presented as a function of substrate temperature and Group V-limited growth rate...

  20. Pathogenic and Ice-Nucleation Active (INA) Bacteria causing Dieback of Willows in Short Rotation Forestry

    Energy Technology Data Exchange (ETDEWEB)

    Nejad, Pajand

    2005-03-01

    To find out whether bacteria isolated from diseased plant parts can be the main causal agent for the dieback appearing in Salix energy forestry plantations in Sweden during the last few years, and if the joint effects of bacteria and frost injury are synergistic, extensive sampling of shoots from diseased Salix plants was performed. We performed several laboratory and greenhouse investigations and used evaluation techniques on the functions of the Ice-Nucleation Active (INA) bacteria. We carried out a comparison between spring and autumn bacterial communities isolated from within (endophytically) and surface (epiphytically) plant tissues of Salix viminalis. Seasonal variation of bacteria in willow clones with different levels of frost sensitivity and symptoms of bacterial damage was also investigated. We further focussed on possible effect of fertilisation and nutrient availability on the bacterial community in relation to plant dieback in Estonian willow plantations. The identification and detection of INA bacteria which cause damage in combination with frost to willow (Salix spp) plants in late fall, winter and spring was performed using BIOLOG MicroPlate, biochemical tests, selective INA primers and 16S rDNA analysis. To distinguish the character for differentiation between these bacteria morphologically and with respect to growing ability different culture media were used. We studied the temperature, at which ice nucleation occurred for individual bacteria, estimated the population of INA bacteria, effect of growth limiting factors, and evaluated the effect of chemical and physical agents for disruption and possible inhibition of INA among individual bacterial strains. The concentration of carbon, nitrogen and phosphorus on INA is discussed. We demonstrate that among the bacterial isolates recovered from the willow plantations, there were many that were capable of ice nucleation at temperatures between -2 and -10 deg C, many that were capable of inducing a

  1. Self-assembled InAs quantum dots. Properties, modification and emission processes

    International Nuclear Information System (INIS)

    Schramm, A.

    2007-01-01

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  2. Attachment of Luminescent Neutral “Pt(pq(C≡CtBu” Units to Di and Tri N-Donor Connecting Ligands: Solution Behavior and Photophysical Properties

    Directory of Open Access Journals (Sweden)

    Elena Lalinde

    2014-10-01

    Full Text Available Binuclear derivatives [{Pt(pq(C≡CtBu}2(μ-L] (1a–5a, containing a series of dinitrogen linker ligands and the trinuclear [{Pt(pq(C≡CtBu}3(μ-L] (6a [L = μ-1,3,5-tris(pyridine-4-ylethynylbenzene], formed by bridge-splitting reactions with [Pt(pq(μ-κCα:η2-C≡CtBu]2 (Pt-1, are reported. The complexes are characterized by a combination of 1H NMR spectroscopy, mass spectrometry and X-ray crystallography (2a and 4a. 1H NMR proves the existence of a dynamic equilibrium in solution between the diplatinum complexes (species a, the corresponding mononuclear complex with terminal N-donor ligands (species b, the starting material (Pt-1 and the free ligand (L. The effects of concentration, temperature and solvent properties on the equilibrium have been studied. The optical properties of these systems have been investigated by UV-visible absorption and emission spectroscopies in solid state and in solution, and the nature of the transitions and the excited state analyzed by theoretical calculations on 2a.

  3. A family of entangled coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and auxiliary N-donor ligands: Luminescent sensing

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jun [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China); College of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong 643000 (China); Bai, Chao [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China); Hu, Huai-Ming, E-mail: ChemHu1@NWU.EDU.CN [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China); Yuan, Fei; Xue, Gang-Lin [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest University, Xi' an 710127 (China)

    2017-05-15

    Eight Zn(II)-based coordination polymers, namely, [Zn{sub 2}L{sub 2}(2,2’-bipy)]{sub n}·nH{sub 2}O (1), [Zn{sub 2}L{sub 2}(phen)]{sub n}·nH{sub 2}O (2), [ZnL(phen)(H{sub 2}O)]{sub n} (3), [Zn{sub 3}L{sub 3}(4,4’-bipy)]{sub n} (4), [Zn{sub 2}L{sub 2}(4,4’-bipy){sub 2}]{sub n} [Zn{sub 2}L{sub 2}(H{sub 2}O){sub 2}]{sub n}·2nH{sub 2}O (5), [Zn{sub 4}L{sub 4}(bpp){sub 2}]{sub n} (6), [ZnL(bbi){sub 0.5}]{sub n} (7), [ZnL(bpz)]{sub n} (8) (H{sub 2}L=4,4’-([1,2-phenylenebis-(methylene)]bis(oxy))dibenzoic acid, 2,2’-bipy =2,2’-bipyridine, phen =1,10-phenanthroline, 4,4’-bpy=4,4’-bipyridine, bpp =1,3-bis(4-pyridyl)propane, bbi=1,4-bis(imidazol-1-yl)butane, bpz=3,3′,5,5′-tetramethyl-4,4′-bipyrazole), have been hydrothermally synthesized and structurally characterized. 1–8 display various coordination motifs with different entangled forms and conformations due to the effect of the assistant N-donor ligands. The photoluminescent properties of compounds 1–8 in solid state were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu{sup 2+} cations and CrO{sub 4}{sup 2-} anions, as well as detection ability for the different organic solvents and nitro explosives. These results indicated that it could be utilized as a multi-responsive luminescent sensor. Furthermore, compound 3 also shows good chemical resistance to both acidity and alkalinity solutions with pH ranging from 2 to 13. Thus, multi-photofunctionality and fluorescent response to pH have been combined in the 3, which is the first example in the Zn-based hybrid materials. - Graphical abstract: Eight new Zn(II)-based coordination polymers constructed from a flexible V-shaped long bicarboxylic acid and different N-donor ligands have been hydrothermally synthesized through fixing the metal salts and the solvent systems. The photoluminescent properties of complexes 1−8 in solid state were studied. Interestingly, 3 exhibits highly efficient luminescent sensing for Cu{sup 2

  4. A series of Cadmium(II) complexes with 2-substituted terephthalate building block and N-Donor co-ligands: Structural diversity and fluorescence properties

    Science.gov (United States)

    Ren, Yixia; Zhou, Shanhong; Wang, Zhixiang; Zhang, Meili; Wang, Jijiang; Cao, Jia

    2017-11-01

    Four new Cd(II) complexes have been prepared based on 1,2,4-trimellitic acid (H3tma) and monosodium 2-sulfoterephthalate (2-NaH2stp), formulated as [Cd2(Htma)2 (dpp)2(H2O)] (1), [Cd3 (tma)2 (2,4-bipy)4(H2O)2] (2), [Cd (2-Hstp) (2,2'-bipy)2]·2H2O (3) and [Cd (2-Hstp) (2,4-bipy) (H2O)2] (4) (dpp = dipyrido [3,2-a:2‧,3'-c] phenazine, 2,4-bipy = 2,4-bipyridine, 2,2'-bipy = 2,2'- bipyridine) by hydrothermal method. X-ray diffraction structural analyses show all these complexes crystallized in triclinic crystal system of Pī space group, but their structures are diverse. Complex 1 exhibits an infinite one-dimensional chain featuring the left- and right-handed stranded chains interweaved each other. For 2, the two-dimensional network is constructed by one-dimensional ladder-like chain linked by Cd2 ions. In complex 3, the cadmium ion is surrounded with one 2-Hstp2- anion and two 2,2'-bipy molecules. Complex 4 is also a discrete structure based on a metallic dimer unit. In all these complexes, the N-donor co-ligands take the important roles in the assembly of three-dimensional supramolecular structures. The fluorescence properties of complexes 1-4 could be assigned to the π - π* transition of organic ligands.

  5. Conformational supramolecular isomerism in one-dimensional silver(I) coordination polymer of a flexible bis(bidentate) N,N-donor ligand with p-xylyl spacer.

    Science.gov (United States)

    Chakraborty, Biswarup; Halder, Partha; Paine, Tapan Kanti

    2011-04-14

    The isolation and structural characterisation of three isomeric silver(I) complexes, 1a, 1b and 2 with the general formula {[AgL(1)]ClO(4)}(n) (where L(1) is a bis(bidentate) N,N-donor ligand derived from the Schiff-base condensation of α,α'-diamino-p-xylene and pyridine-2-carboxaldehyde) are discussed. Single-crystal X-ray structures reveal the polymeric nature for the complexes where all the silver ions are in pseudotetrahedral geometry with the AgN(4) coordination environment. Isomers 1a (Pc space group) and 1b (Cc space group) were crystallised from acetonitrile whereas 2 (C2/c space group) was crystallised during the synthesis from a solvent mixture of dicholormethane and methanol. The flexible ligand (L(1)) adopts only an anti conformation in 1b and the presence of two different anti conformations in the repeating unit results in the formation of a trapezoidal wave polymeric chain. However, both gauche and anti conformations of the ligand are found to be present in the polymeric chains of 1a. In the polymeric chain of 2, only one anti isomer of the ligand is present in the repeating unit resulting in a triangular wave chain. The structure of isomer 1a is solvent induced and solvent plays a major role in the crystal packing of this isomer. One-dimensional coordination polymers 1a, 1b and 2 are related to each other as conformational supramolecular isomers. Additionally, two independent polymeric chains parallel to each other: one triangular wave consisting of only an anti conformation and a trapezoidal wave chain consisting of alternate gauche and anti conformations of the ligand are observed in 1a. This is a rare example of two supramolecular isomers present in the same crystal. Six different conformers of the flexible ligand are observed in the crystals of coordination polymers. © The Royal Society of Chemistry 2011

  6. Direct evidence of strain transfer for InAs island growth on compliant Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

    2015-04-13

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

  7. On the processing of InAs and InSb photodiode applications

    Energy Technology Data Exchange (ETDEWEB)

    Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

    2008-07-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. On the processing of InAs and InSb photodiode applications

    International Nuclear Information System (INIS)

    Odendaal, V.; Botha, J.R.; Auret, F.D.

    2008-01-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Electron transport in InAs nanowires and heterostructure nanowire devices

    Science.gov (United States)

    Thelander, C.; Björk, M. T.; Larsson, M. W.; Hansen, A. E.; Wallenberg, L. R.; Samuelson, L.

    2004-09-01

    Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states.

  10. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  11. Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

    International Nuclear Information System (INIS)

    Gerstenberg, H.; Mueller, P.

    1990-01-01

    Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates τ ρ -1 - ρne 2 /m * and τ x -1 2πkub(B)X/h/2π (where X is the Dingle temperature). The measured conduction electron density after irradiation and thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given. (author)

  12. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

    Science.gov (United States)

    Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

    2018-05-01

    A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

  13. Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

    Energy Technology Data Exchange (ETDEWEB)

    Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

    1995-12-31

    Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

  14. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

    Science.gov (United States)

    Anyebe, Ezekiel A.; Sandall, I.; Jin, Z. M.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, Timothy D.; Cao, Y. C.; Li, H. D.; Harvey, R.; Zhuang, Q. D.

    2017-04-01

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

  15. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Science.gov (United States)

    Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

    2017-07-01

    InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

  16. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.

    Science.gov (United States)

    Anyebe, Ezekiel A; Sandall, I; Jin, Z M; Sanchez, Ana M; Rajpalke, Mohana K; Veal, Timothy D; Cao, Y C; Li, H D; Harvey, R; Zhuang, Q D

    2017-04-10

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

  17. Nexus between directionality of terahertz waves and structural parameters in groove patterned InAs

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Jong-Hyuk; Min, Kyunggu; Jeong, Hoonil; Jho, Young-Dahl [School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Eun-Hye; Song, Jin-Dong [Center for Opto-Electronics Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

    2013-04-07

    We performed terahertz (THz) time-domain spectroscopy in various geometries, for characterizing the directivity of THz waves emitted from groove patterned InAs structures. We first identified two transient transport processes as underlying THz emission mechanisms in InAs epilayers with different thicknesses. Carrier drift around the surface depletion region was predominant for the THz wave generation in the thin sample group (10-70 nm), whereas electronic diffusion overrode the drift currents in the thick sample group (370-900 nm) as revealed by the amplitude change and phase reversal. Through a combination of electron-beam lithography and inductively coupled plasma etching in 1 {mu}m-thick InAs epilayers, we could further periodically fabricate either asymmetric V-groove patterns or symmetric parabolic apertures. The THz amplitude was enhanced, particularly along the line-of-sight transmissive direction when the periodic groove patterns act as microscale reflective mirrors separated by a scale of the diffusion length.

  18. Geometric factors in the magnetoresistance of n-doped InAs epilayers

    KAUST Repository

    Sun, Jian

    2013-11-27

    We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

  19. Atom optics

    International Nuclear Information System (INIS)

    Balykin, V. I.; Jhe, W.

    1999-01-01

    Atom optics, in analogy to neutron and electron optics, deals with the realization of as a traditional elements, such as lenes, mirrors, beam splitters and atom interferometers, as well as a new 'dissipative' elements such as a slower and a cooler, which have no analogy in an another types of optics. Atom optics made the development of atom interferometer with high sensitivity for measurement of acceleration and rotational possible. The practical interest in atom optics lies in the opportunities to create atom microprobe with atom-size resolution and minimum damage of investigated objects. (Cho, G. S.)

  20. Atom-by-atom assembly

    International Nuclear Information System (INIS)

    Hla, Saw Wai

    2014-01-01

    Atomic manipulation using a scanning tunneling microscope (STM) tip enables the construction of quantum structures on an atom-by-atom basis, as well as the investigation of the electronic and dynamical properties of individual atoms on a one-atom-at-a-time basis. An STM is not only an instrument that is used to ‘see’ individual atoms by means of imaging, but is also a tool that is used to ‘touch’ and ‘take’ the atoms, or to ‘hear’ their movements. Therefore, the STM can be considered as the ‘eyes’, ‘hands’ and ‘ears’ of the scientists, connecting our macroscopic world to the exciting atomic world. In this article, various STM atom manipulation schemes and their example applications are described. The future directions of atomic level assembly on surfaces using scanning probe tips are also discussed. (review article)

  1. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  2. Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors

    Science.gov (United States)

    Han, Sangmoon; Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Seoung-Ki; Hwang, Jeongwoo; Chung, Dong Chul; Kim, Jin Soo

    2018-02-01

    We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 kΩ and 0.19 Ω cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 kΩ and 0.39 Ω cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature.

  3. PERBANDINGAN PERTUMBUHAN STREPTOCOCCUS MUTANS INA99 PADA BERBAGAI MEDIA PERBENIHAN PADAT

    Directory of Open Access Journals (Sweden)

    Yayuk Yuliarsi

    2015-07-01

    Full Text Available Previous study shows that tryptone-yeast extract-cystine-sucrose is choice of the culture media for isolating and growing S. mutans serotype C, but the effectiveness in stepping up the recovery growth of the bacteria has never been compared with that of the blood agar added to yeast extract and sucrose. This study was come to find out the growth of S. mutans serotype-c with blood agar-yest extract-sucrose, S. mutans INA99 serotype-c is identified, sliced, and cultured into blood agar-yeast extract-sucrose, brucella agar blood-yeast extract sucrose, blood agar and tryptone-yeast extract-cystine-sucrose, each 4 slices. The average amount of blood agar colonies that grows after an incubation of 2x24 hours in an anaerob conditionof 37 C, diluted by 40 time is 4.890. In blood agar-yeast extract-sucrose, the average colony is 145.600, diluted 1.600 time. In brucella agar blood-yeast extract-sucrose, the average colony is 103.50, diluted 40 times. In tryptone-yeast extract-cystine-sucrose the average colony is 2.430, diluted 40 times. Statistical result shows that, there are significant difference (p=0.000 between the total colonies of S. mutans INA99 serotype c which grows on the different types of culture media. The largest amount of colony is present on blood agar-yeast extract-sucrose, the followed by brucella agar blood-yeast extract-sucrose, blood agar and tryptone-yeast extract-cystine-sucrose. Conclusion : blood agar which added yeast extract and sucrose is the best culture media for S. mutans INA99 serotype c growth.

  4. Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Egorov, A.Yu. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bedarev, D. [Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bernklau, D.; Riechert, H. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Dumitras, G. [Technical Univ. of Munich, Garching (Germany). Dept. of Physics E16

    2001-04-01

    Self-assembled InAs quantum dots (QDs) are fabricated in In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} and In{sub 0.06}Ga{sub 0.94}As{sub 0.98}N{sub 0.02} matrices on GaAs by solid source molecular beam epitaxy. The influence of InAs average layer thickness and matrix material on photoluminescence properties are studied. We observe a photoluminescence peak wavelength up to 1.49 {mu}m from structures with a nominal InAs thickness of four monolayers (ML). For QD structures emitting at 1.3 {mu}m, no saturation of ground state luminescence and no excited state photoluminescence are detected. This should lead to an improved performance of 1.3 {mu}m quantum dot lasers on GaAs. (orig.)

  5. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  6. ESTUDO DE PRIMEIROS PRINCÍPIOS DE NANOFIOS DE INAS SUBMETIDOS A TENSÕES EXTREMAS

    OpenAIRE

    Leonardo Fernandes Sampaio

    2015-01-01

    Nanofios, devido às suas caracteristícas estruturais únicas, são candidatos naturais para dispositivos condutores de eletricidade e calor. Quando estes nanofios formam parte de um dispositivo, podem estar sujeitos a tensões externas que podem alterar as suas propriedades intrínsecas. Neste trabalho estudaremos o comportamento mecânico e eletrônico de nanofios de InAs com diferentes diâmetros quando sujeitos a tensões externas extremas. Nossos cálculos usam a Teoria do Funcional...

  7. Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots

    International Nuclear Information System (INIS)

    Eble, B.; Krebs, O.; Voisin, P.; Lemaitre, A.; Kudelski, A.; Braun, P.F.; Lombez, L.; Marie, X.; Urbaszek, B.; Amand, T.; Lagarde, D.; Renucci, P.; Kowalik, K.; Kalevich, V.K.; Kavokin, K.V.

    2006-01-01

    We present a detailed study of the hyperfine interaction between carrier and nuclear spins in InAs semiconductor quantum dots. Time resolved measurements on excitons in positively charged quantum dots show the electron spin relaxation due to random fluctuations of the spin orientation of the nuclei in the quantum dot. A complimentary aspect of the hyperfine interaction can be uncovered in single dot continuous wave photoluminescence experiments in a weak magnetic field, namely the Overhauser shift due to the dynamic polarisation of the nuclei following excitation with circularly polarised light. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Influence of nitrogen on the growth and the properties of InAs quantum dots

    International Nuclear Information System (INIS)

    Schumann, O.

    2004-01-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  9. PERBANDINGAN PERTUMBUHAN STREPTOCOCCUS MUTANS INA99 PADA BERBAGAI MEDIA PERBENIHAN PADAT

    OpenAIRE

    Yayuk Yuliarsi; Takarsyah M. Putra; Boedi Oe. Roeslan

    2015-01-01

    Previous study shows that tryptone-yeast extract-cystine-sucrose is choice of the culture media for isolating and growing S. mutans serotype C, but the effectiveness in stepping up the recovery growth of the bacteria has never been compared with that of the blood agar added to yeast extract and sucrose. This study was come to find out the growth of S. mutans serotype-c with blood agar-yest extract-sucrose, S. mutans INA99 serotype-c is identified, sliced, and cultured into blood agar-yeast ex...

  10. Spin-lattice relaxation times and knight shift in InSb and InAs

    International Nuclear Information System (INIS)

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  11. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Soerensen, B. S.; Aagesen, M.; Soerensen, C. B.; Lindelof, P. E.; Martinez, K. L.; Nygaard, J.

    2008-01-01

    We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowire surface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence (10-10 5 ) of the on-off ratio caused by the surface inversion layer

  12. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-11-07

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  13. Atomic polarizabilities

    International Nuclear Information System (INIS)

    Safronova, M. S.; Mitroy, J.; Clark, Charles W.; Kozlov, M. G.

    2015-01-01

    The atomic dipole polarizability governs the first-order response of an atom to an applied electric field. Atomic polarization phenomena impinge upon a number of areas and processes in physics and have been the subject of considerable interest and heightened importance in recent years. In this paper, we will summarize some of the recent applications of atomic polarizability studies. A summary of results for polarizabilities of noble gases, monovalent, and divalent atoms is given. The development of the CI+all-order method that combines configuration interaction and linearized coupled-cluster approaches is discussed

  14. Atomic polarizabilities

    Energy Technology Data Exchange (ETDEWEB)

    Safronova, M. S. [Department of Physics and Astronomy, University of Delaware, Newark, DE 19716 (United States); Mitroy, J. [School of Engineering, Charles Darwin University, Darwin NT 0909 (Australia); Clark, Charles W. [Joint Quantum Institute, National Institute of Standards and Technology and the University of Maryland, Gaithersburg, Maryland 20899-8410 (United States); Kozlov, M. G. [Petersburg Nuclear Physics Institute, Gatchina 188300 (Russian Federation)

    2015-01-22

    The atomic dipole polarizability governs the first-order response of an atom to an applied electric field. Atomic polarization phenomena impinge upon a number of areas and processes in physics and have been the subject of considerable interest and heightened importance in recent years. In this paper, we will summarize some of the recent applications of atomic polarizability studies. A summary of results for polarizabilities of noble gases, monovalent, and divalent atoms is given. The development of the CI+all-order method that combines configuration interaction and linearized coupled-cluster approaches is discussed.

  15. Hexa- and heptacoordinated manganese(II) dicyanamide complexes containing a tetradentate N-donor Schiff base: Syntheses, composition tailored architectures and magnetic properties

    Science.gov (United States)

    Bhar, Kishalay; Sutradhar, Dipu; Choubey, Somnath; Ghosh, Rajarshi; Lin, Chia-Her; Ribas, Joan; Ghosh, Barindra Kumar

    2013-11-01

    Two 1D coordination polymers [Mn(L)(μ1,5-dca)(MeOH)]n(ClO4)n (1) and [Mn(L)(μ1,5-dca)]n(PF6)n (2) and a dinuclear compound [Mn2(L)2(μ1,5-dca)2(dca)2]ṡH2O (3) [L = N,N'-(bis-(pyridin-2-yl)benzylidene)-ethane-1,2-diamine; dca = dicyanamide] have been isolated using one-pot synthesis of the building components in appropriate molar ratios and characterized. X-ray structural studies reveal that 1 forms a zigzag 1D chain through single Mn-(NCNCN)-Mn units in which each heptacoordinated manganese(II) center adopts a distorted pentagonal bipyramidal geometry with an MnN6O chromophore occupied with four N atoms of L, two nitrile N atoms of monobridged μ1,5-dca and one O atom of MeOH. In 2, each hexacoordinated metal(II) center has a distorted octahedral coordination environment with an MnN6 chromophore bound by four N atoms of L and two nitrile N atoms of two different single bridged μ1,5-dca units; the latter connects other neighboring metal centers in a non-ending fashion affording a linear 1D chain. Complex 3 is dinuclear where two [Mn(L)]2+ units are connected by double μ1,5-dca bridges with a distorted pentagonal bipyramidal environment. Variable-temperature magnetic susceptibility measurements of 1-3 show weak antiferromagnetic interactions among the metal centers through μ1,5-dca bridges.

  16. Atomic physics

    International Nuclear Information System (INIS)

    Armbruster, P.; Beyer, H.; Bosch, F.; Dohmann, H.D.; Kozhuharov, C.; Liesen, D.; Mann, R.; Mokler, P.H.

    1984-01-01

    The heavy ion accelerator UNILAC is well suited to experiments in the field of atomic physics because, with the aid of high-energy heavy ions atoms can be produced in exotic states - that is, heavy atoms with only a few electrons. Also, in close collisions of heavy ions (atomic number Z 1 ) and heavy target atoms (Z 2 ) short-lived quasi-atomic 'superheavy' systems will be formed - huge 'atoms', where the inner electrons are bound in the field of the combined charge Z 1 + Z 2 , which exceeds by far the charge of the known elements (Z <= 109). Those exotic or transient superheavy atoms delivered from the heavy ion accelerator make it possible to study for the first time in a terrestrial laboratory exotic, but fundamental, processes, which occur only inside stars. Some of the basic research carried out with the UNILAC is discussed. This includes investigation of highly charged heavy atoms with the beam-foil method, the spectroscopy of highly charged slow-recoil ions, atomic collision studies with highly ionised, decelerated ions and investigations of super-heavy quasi-atoms. (U.K.)

  17. Ultracold atoms on atom chips

    DEFF Research Database (Denmark)

    Krüger, Peter; Hofferberth, S.; Haller, E.

    2005-01-01

    Miniaturized potentials near the surface of atom chips can be used as flexible and versatile tools for the manipulation of ultracold atoms on a microscale. The full scope of possibilities is only accessible if atom-surface distances can be reduced to microns. We discuss experiments in this regime...

  18. Operativni i vizuelni nedostatci mašina i opreme za aplikaciju pesticida u svetinikolskoj opštini

    OpenAIRE

    Dimitrovski, Zoran; Dimitrov, Sasko; Mihajlov, Vanco

    2016-01-01

    Direktiva 2009/128 / EC Evropskog parlamenta uspostavlja okvir za sprovođenje Nacionalnog akcionog plana u svakoj zemlji, koji se odnosi na održivo korišćenje pesticida. Jedna od oblasti koje su obuhvaćene Direktivom se direktno odnosi na uvođenje obaveznog praćenja i nadzora mašina za primenu pesticida. U Republici Makedonij se ne sprovodi inspekcija ovih mašina, a s druge strane, kao zemlja kandidat Makedonija je obavezna da uskladi svoje propise sa evropskim. Glavni ci...

  19. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    KAUST Repository

    Rota, Michele B.

    2017-07-12

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

  20. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  1. Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.

    Science.gov (United States)

    Karg, S F; Troncale, V; Drechsler, U; Mensch, P; Das Kanungo, P; Schmid, H; Schmidt, V; Gignac, L; Riel, H; Gotsmann, B

    2014-08-01

    Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).

  2. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  3. Atomic physics

    International Nuclear Information System (INIS)

    Anon.

    1976-01-01

    Research activities in atomic physics at Lawrence Berkeley Laboratory during 1976 are described. Topics covered include: experiments on stored ions; test for parity violation in neutral weak currents; energy conservation and astrophysics; atomic absorption spectroscopy, atomic and molecular detectors; theoretical studies of quantum electrodynamics and high-z ions; atomic beam magnetic resonance; radiative decay from the 2 3 Po, 2 levels of helium-like argon; quenching of the metastable 2S/sub 1/2/ state of hydrogen-like argon in an external electric field; and lifetime of the 2 3 Po level of helium-like krypton

  4. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    NARCIS (Netherlands)

    Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

  5. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    Bull, D.J.

    1977-01-01

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

  6. Calcium homeostasis in photoreceptor cells of Drosophila mutants inaC and trp studied with the pupil mechanism

    NARCIS (Netherlands)

    Hofstee, CA; Stavenga, DG

    1996-01-01

    The light-driven pupil mechanism, consisting of an assembly of mobile pigment granules inside the photoreceptor cells, has been investigated by in vivo reflection microspectrophotometry in wild type (WT) Drosophila and in the photoreceptor mutants inaC and trp. The pupillary response of a

  7. Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

    DEFF Research Database (Denmark)

    Saldaña, J. C. Estrada; Žitko, R.; Cleuziou, J. P.

    2018-01-01

    We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe...

  8. Early Atomism

    Indian Academy of Sciences (India)

    https://www.ias.ac.in/article/fulltext/reso/015/10/0905-0925. Keywords. Atomic theory; Avogadro's hypothesis; atomic weights; periodic table; valence; molecular weights; molecular formula; isomerism. Author Affiliations. S Ramasesha1. Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, ...

  9. Atomic physics

    CERN Document Server

    Born, Max

    1969-01-01

    The Nobel Laureate's brilliant exposition of the kinetic theory of gases, elementary particles, the nuclear atom, wave-corpuscles, atomic structure and spectral lines, electron spin and Pauli's principle, quantum statistics, molecular structure and nuclear physics. Over 40 appendices, a bibliography, numerous figures and graphs.

  10. Exotic atoms

    International Nuclear Information System (INIS)

    Backenstoss, G.

    1986-01-01

    Recent developments in the field of exotic atoms are presented. The improved quality of accelerator facilities and experimental techniques leads to a more precise determination of data. This opens new fields in nuclear and particle physics to which exotic atoms may contribute valuable knowledge. (author)

  11. Exploring coherence of individual excitons in InAs quantum dots embedded in natural photonic defects: Influence of the excitation intensity

    Science.gov (United States)

    Wigger, D.; Mermillod, Q.; Jakubczyk, T.; Fras, F.; Le-Denmat, S.; Reiter, D. E.; Höfling, S.; Kamp, M.; Nogues, G.; Schneider, C.; Kuhn, T.; Kasprzak, J.

    2017-10-01

    The exact optical response of quantum few-level systems depends crucially on the exact choice of the incoming pulse areas. We use four-wave mixing (FWM) spectroscopy to infer the coherent response and dynamics of single InAs quantum dots (QDs) and study their pulse area dependence. By combining atomic force microscopy with FWM hyperspectral imaging, we show that the retrieved FWM signals originate from individual QDs enclosed in natural photonic defects. The optimized light-matter coupling in these defects allows us to perform our studies in a wide range of driving field amplitudes. When varying the pulse areas of the exciting laser pulses, Rabi rotations of microscopic interband coherences can be resolved by the two-pulse FWM technique. We investigate these Rabi coherence rotations within two- and three-level systems, both theoretically and experimentally, and explain their damping by the coupling to acoustic phonons. To highlight the importance of the pulse area influence, we show that the phonon-induced dephasing of QD excitons depends on the pulse intensity.

  12. Tehničke mere za smanjenje broja nesreća sa učešćem poljoprivrednih mašina

    OpenAIRE

    Gligorevic, Kosta; Oljaca, Mico; Radojcic, Dušan; Dimitrovski, Zoran

    2016-01-01

    Istraživanja pokazuju da su nesreće sa mobilnom poljoprivrednom mehanizacijom u Republici Srbiji veoma česta pojava. Osnovni problemi su: nedostatak obuke za pravilno korišćenje i održavanje mašina, nedovoljno poznavanje saobraćajnih propisa vozača traktora, neodgovornost i nedisciplina prilikom korišćenja traktora i poljoprivredih mašina. U radu su predstavljene tehničke mere kojima se broj nesreća može smanjiti, uz veće poštovanje zakona iz oblasti sigurnosti rada mašina, ...

  13. Superradiators created atom by atom

    Science.gov (United States)

    Meschede, Dieter

    2018-02-01

    High radiation rates are usually associated with macroscopic lasers. Laser radiation is “coherent”—its amplitude and phase are well-defined—but its generation requires energy inputs to overcome loss. Excited atoms spontaneously emit in a random and incoherent fashion, and for N such atoms, the emission rate simply increases as N. However, if these atoms are in close proximity and coherently coupled by a radiation field, this microscopic ensemble acts as a single emitter whose emission rate increases as N2 and becomes “superradiant,” to use Dicke's terminology (1). On page 662 of this issue, Kim et al. (2) show the buildup of coherent light fields through collective emission from atomic radiators injected one by one into a resonator field. There is only one atom ever in the cavity, but the emission is still collective and superradiant. These results suggest another route toward thresholdless lasing.

  14. Isolation, Fractionation and Characterization of Catalase from Neurospora crassa (InaCC F226)

    Science.gov (United States)

    Suryani; Ambarsari, L.; Lindawati, E.

    2017-03-01

    Catalase from Indigenous isolate Neurospora crassa InaCC F226 has been isolated, fractionated and characterized. Production of catalase by Neurospora crassa was done by using PDA medium (Potato Dextrosa Agar) and fractionated with ammonium sulphate with 20-80% saturation. Fraction 60% was optimum saturation of ammonium sulphate and had highest specific activity 3339.82 U/mg with purity 6.09 times, total protein 0.920 mg and yield 88.57%. The optimum pH and temperature for catalase activity were at 40°C and pH 7.0, respectively. The metal ions that stimulated catalase activity acted were Ca2+, Mn2+ and Zn2+, and inhibitors were EDTA, Mg2+ and Cu2+. Based on Km and Vmax values were 0.2384 mM and 13.3156 s/mM.

  15. Tunable emission from InAs quantum dots gated with graphene

    Science.gov (United States)

    Kinnischtzke, Laura; Goodfellow, Kenneth; Chakraborty, Chitraleema; Lai, Yiming; Badolato, Antonio; Vamivakas, Nick

    We demonstrate Stark shifted photo-luminescence from InAs quantum dots (QD) using an n-i-Schottky diode where graphene has been used as the Schottky barrier material. This hybrid photonic device is motivated by the need for tunable single photon sources with high flux and storage capabilities. Photonic crystal nanocavities decorated with a single QD provide a rich environment for coupling spins and photons, in addition to accessing cavity quantum electrodynamic physics. Methods currently used for electrically tuning the QD inside the cavity suffer from a loss of the cavity quality factor, or high leakage currents in the diode which impacts the spin-photon coupling of the device. Our measurements are a first step towards using a graphene flake to electrically tune the emission of a strongly coupled QD-cavity system. NSF Grant No. DMR-1309734.

  16. Size and shape dependent optical properties of InAs quantum dots

    Science.gov (United States)

    Imran, Ali; Jiang, Jianliang; Eric, Deborah; Yousaf, Muhammad

    2018-01-01

    In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.

  17. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

    Science.gov (United States)

    Vigneau, Florian; Zeng, Zaiping; Escoffier, Walter; Caroff, Philippe; Leturcq, Renaud; Niquet, Yann-Michel; Raquet, Bertrand; Goiran, Michel

    2018-03-01

    The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

  18. Complexation of trivalent actinides and lanthanides with hydrophilic N-donor ligands for Am(III)/Cm(III) and An(III)/Ln(III) separation; Komplexierung von trivalenten Actiniden und Lanthaniden mit hydrophilen N-Donorliganden zur Am(III)/Cm(III)- bzw. An(III)/Ln(III)-Trennung

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Christoph

    2017-07-24

    The implementation of actinide recycling processes is considered in several countries, aiming at the reduction of long-term radiotoxicity and heat load of used nuclear fuel. This requires the separation of the actinides from the fission and corrosion products. The separation of the trivalent actinides (An(III)) Am(III) and Cm(III), however, is complicated by the presence of the chemically similar fission lanthanides (Ln(III)). Hydrophilic N-donor ligands are employed as An(III) or Am(III) selective complexing agents in solvent extraction to strip An(III) or Am(III) from an organic phase loaded with An(III) and Ln(III). Though they exhibit excellent selectivity, the complexation chemistry of these ligands and the complexes formed during solvent extraction are not sufficiently characterized. In the present thesis the complexation of An(III) and Ln(III) with hydrophilic N-donor ligands is studied by time resolved laser fluorescence spectroscopy (TRLFS), UV/Vis, vibronic sideband spectroscopy and solvent extraction. TRLFS studies on the complexation of Cm(III) and Eu(III) with the Am(III) selective complexing agent SO{sub 3}-Ph-BTBP (tetrasodium 3,3{sup '},3'',3{sup '''}-([2,2{sup '}-bipyridine]-6,6{sup '}-diylbis(1,2,4-triazine-3,5,6-triyl)) tetrabenzenesulfonate) revealed the formation of [M(SO{sub 3}-Ph-BTBP){sub n}]{sup (4n-3)-} complexes (M = Cm(III), Eu(III); n = 1, 2). The conditional stability constants were determined in different media yielding two orders of magnitude larger β{sub 2}-values for the Cm(III) complexes, independently from the applied medium. A strong impact of ionic strength on the stability and stoichiometry of the formed complexes was identified, resulting from the stabilization of the pentaanionic [M(SO{sub 3}-Ph-BTBP){sub 2}]{sup 5-} complex with increasing ionic strength. Thermodynamic studies of Cm(III)-SO{sub 3}-Ph-BTBP complexation showed that the proton concentration of the applied medium impacts

  19. Surface structure investigations using noncontact atomic force microscopy

    International Nuclear Information System (INIS)

    Kolodziej, J.J.; Such, B.; Goryl, M.; Krok, F.; Piatkowski, P.; Szymonski, M.

    2006-01-01

    Surfaces of several A III B V compound semiconductors (InSb, GaAs, InP, InAs) of the (0 0 1) orientation have been studied with noncontact atomic force microscopy (NC-AFM). Obtained atomically resolved patterns have been compared with structural models available in the literature. It is shown that NC-AFM is an efficient tool for imaging complex surface structures in real space. It is also demonstrated that the recent structural models of III-V compound surfaces provide a sound base for interpretation of majority of features present in recorded patterns. However, there are also many new findings revealed by the NC-AFM method that is still new experimental technique in the context of surface structure determination

  20. [Satisfaction with perinatal care in Vysočina region in the period between October 2013 and September 2014].

    Science.gov (United States)

    Takács, L; Seidlerová, J Mlíková; Smolík, F; Hoskovcová, S; Antonín, P; Vařáková, J; Valová, A; Svoboda, T; Dočkalová, J

    2015-12-01

    To assess women's satisfaction with perinatal care provided in maternity hospitals in Vysočina region, to identify the areas with high satisfaction scores as well as those requiring improvement, and to describe the factors influencing women's satisfaction, i. e. dissatisfaction with the care provided during labor and birth and the early postpartal period. Original study. Department of Psychology, Faculty of Philo-sophy, Charles University, Prague. The satisfaction survey was conducted in all maternity hospitals in Vysočina region (Jihlava, Havlíčkův Brod, Třebíč, Pelhřimov, Nové město na Moravě) during the period between October 2013 and September 2014. All women who had given birth in those hospitals during the period were approached and asked to participate in this survey. The women evaluated the perinatal care not before 58 days after birth, so that the evaluation of perinatal care did not take place directly during their stay at maternity hospital. In total, 1366 women took part in the study. The original Czech questionnaire KLI-P was used for the data collection. The KLI-P measures psychosocial climate of maternity hospitals on the following six scales: helpfulness and empathy of caregivers; control and involvement in decision-making; communication of information and availability of caregivers; dismissive attitude and lack of interest; physical comfort and services. The satisfaction rates with component dimensions of intrapartal and postpartal care at the maternity hospitals in Vysočina region were compared to the satisfaction rates for the Czech Republic as a whole as obtained in our previous study. We used the Kruskal-Wallis test for this comparison. The ordinal logistical regression (cumulative logit model) was used to identify predictors of women's satisfaction with intrapartum and postpartum care in Vysočina region. The women who delivered at maternity hospitals in Vysočina region were significantly more satisfied with all dimensions of

  1. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  2. A Brief History of INA and ICOH SCNP: International Neurotoxicology Association and International Congress on Occupational Health Scientific Committee on Neurotoxicology and Psychophysiology

    Science.gov (United States)

    Two international scientific societies dedicated to research in neurotoxicology and neurobehavioral toxicology are the International Neurotoxicology Association (INA) and the International Congress on Occupational Health International Symposium on Neurobehavioral Methods and Effe...

  3. Atomic politics

    International Nuclear Information System (INIS)

    Skogmar, G.

    1979-01-01

    The authors basic point is that the military and civil sides of atomic energy cannot be separated. The general aim of the book is to analyze both the military and civil branches, and the interdependence between them, of American foreign policy in the atomic field. Atomic policy is seen as one of the most important imstruments of foreign policy which, in turn, is seen against the background of American imperialism in general. Firstly, the book investigates the most important means by which the United States has controlled the development in the nuclear field in other countries. These means include influencing the conditions of access to nuclear resources of various kinds, influencing the flow of technical-economic information and influencing international organizations and treaties bearing on atomic energy. The time period treated is 1945-1973. 1973 is chosen as the end-year of the study mainly because of the new conditions in the whole energy field initiated by the oil crisis in that year. The sources of the empirical work are mainly hearings before the Joint Committee on Atomic Energy of the U.S. Congress and legal material of various kinds. Secondly, the goals of the American policy are analyzed. The goals identified are armament effect, non-proliferation (horizontal), sales, and energy dependence. The relation between the main goals is discussed.The discussion is centered on the interdependence between the military and the civil aspects, conflict and coincidence of various goals, the relation between short-term and long-term goals, and the possibilities of using one goal as pretext for another. Thirdly, some causes of the changes in the atomic policy around 1953 and 1963 are identified. These are the strategic balance, the competitive situation, the capacity (of the American atomic productive apparatus), and the nuclear technological stage. The specific composition of these four factors at the two time-points can explain the changes of policy. (author)

  4. Inhibitions of late INa and CaMKII act synergistically to prevent ATX-II-induced atrial fibrillation in isolated rat right atria.

    Science.gov (United States)

    Liang, Faquan; Fan, Peidong; Jia, Jessie; Yang, Suya; Jiang, Zhan; Karpinski, Serge; Kornyeyev, Dmytro; Pagratis, Nikos; Belardinelli, Luiz; Yao, Lina

    2016-05-01

    Increases in late Na(+) current (late INa) and activation of Ca(2+)/calmodulin-dependent protein kinase (CaMKII) are associated with atrial arrhythmias. CaMKII also phosphorylates Nav1.5, further increasing late INa. The combination of a CaMKII inhibitor with a late INa inhibitor may be superior to each compound alone to suppress atrial arrhythmias. Therefore, we investigated the effect of a CaMKII inhibitor in combination with a late INa inhibitor on anemone toxin II (ATX-II, a late INa enhancer)-induced atrial arrhythmias. Rat right atrial tissue was isolated and preincubated with either the CaMKII inhibitor autocamtide-2-related inhibitory peptide (AIP), the late INa inhibitor GS458967, or both, and then exposed to ATX-II. ATX-II increased diastolic tension and caused fibrillation of isolated right atrial tissue. AIP (0.3μmol/L) and 0.1μmol/L GS458967 alone inhibited ATX-II-induced arrhythmias by 20±3% (mean±SEM, n=14) and 34±5% (n=13), respectively, whereas the two compounds in combination inhibited arrhythmias by 81±4% (n=10, pATX-induced increase of diastolic tension. Consistent with the mechanical and electrical data, 0.3μmol/L AIP and 0.1μmol/L GS458967 each inhibited ATX-II-induced CaMKII phosphorylation by 23±3% and 32±4%, whereas the combination of both compounds inhibited CaMKII phosphorylation completely. The effects of an enhanced late INa to induce arrhythmic activity and activation of CaMKII in atria are attenuated synergistically by inhibitors of late INa and CaMKII. Copyright © 2016 Elsevier Ltd. All rights reserved.

  5. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-01-01

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

  6. Sulfur budget and global climate impact of the A.D. 1835 eruption of Cosigüina volcano, Nicaragua

    Science.gov (United States)

    Longpré, Marc-Antoine; Stix, John; Burkert, Cosima; Hansteen, Thor; Kutterolf, Steffen

    2014-10-01

    Large explosive volcanic eruptions can inject massive amounts of sulfuric gases into the Earth's atmosphere and, in so doing, affect global climate. The January 1835 eruption of Cosigüina volcano, Nicaragua, ranks among the Americas' largest and most explosive historical eruptions, but whether it had effects on global climate remains ambiguous. New petrologic analyses of the Cosigüina deposits reveal that the eruption released enough sulfur to explain a prominent circa A.D. 1835 sulfate anomaly in ice cores from both the Arctic and Antarctic. A compilation of temperature-sensitive tree ring chronologies indicates appreciable cooling of the Earth's surface in response to the eruption, consistent with instrumental temperature records. We conclude that this eruption represents one of the most important sulfur-producing events of the last few centuries and had a sizable climate impact rivaling that of the 1991 eruption of Mount Pinatubo.

  7. Raman Spectroscopy of InAs Based Nanowires & Electronic Characterization of Heterostructure InAs/GaInAs Nanowires

    DEFF Research Database (Denmark)

    Tanta, Rawa

    The work presented in this thesis represents two main topics. The first one, which covers a bigger volume of the thesis, is mainly about Raman spectroscopy on individual InAs based nanowires. The second part presents electronic characterization of heterostructure InAs/GaInAs nanowires. Raman...... modes. In the last chapter of this thesis we present a study on electrical characterization of InAs/GaInAs heterostructure nanowires. First, we performed selective etching experiments in order to locate the barriers. Second, the barriers were probed electrically by performing thermally activated...... spectroscopy measurements on InAs based nanowires include several topics. Firstly, we use polarized Raman spectroscopy for determining the crystal orientation of the nanowires based on conventional Raman selection rules. We studied the effect of the high power laser irradiation on the nanowire, and its...

  8. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    Energy Technology Data Exchange (ETDEWEB)

    Shweky, Itzhak [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Aharoni, Assaf [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Mokari, Taleb [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Rothenberg, Eli [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Nadler, Moshe [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Popov, Inna [Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Banin, Uri [Institute of Chemistry, Farkas Center for Light Induced Processes, Hebrew University of Jerusalem, Jerusalem 91904 (Israel) and Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel)]. E-mail: banin@chem.ch.huji.ac.il

    2006-07-15

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence.

  9. Atomic theories

    CERN Document Server

    Loring, FH

    2014-01-01

    Summarising the most novel facts and theories which were coming into prominence at the time, particularly those which had not yet been incorporated into standard textbooks, this important work was first published in 1921. The subjects treated cover a wide range of research that was being conducted into the atom, and include Quantum Theory, the Bohr Theory, the Sommerfield extension of Bohr's work, the Octet Theory and Isotopes, as well as Ionisation Potentials and Solar Phenomena. Because much of the material of Atomic Theories lies on the boundary between experimentally verified fact and spec

  10. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  11. Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers

    Directory of Open Access Journals (Sweden)

    Maronchuk I. E.

    2008-12-01

    Full Text Available Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much worse than control solar cells manufactured on the same structures but without quantum dots. Solar cells containing quantum dots in the p-region were slightly better than control solar cells.

  12. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  13. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2016-11-15

    The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancement of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.

  14. Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

    Energy Technology Data Exchange (ETDEWEB)

    Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

    2011-12-28

    It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

  15. Coarsening process of high-density InAs quantum dots on Sb-irradiated GaAs

    Science.gov (United States)

    Kakuda, Naoki; Yamaguchi, Koichi

    2018-04-01

    High-density InAs quantum dots were grown on Sb-irradiated GaAs(001) by MBE. From InAs coverage and Sb irradiation time (SIT) dependences, the coarsening process of dots for long SIT (50 s) was classified according to four coverage regions. After the dot density rapidly increased and then reached the maximum (region I), the dot density decreased as the InAs coverage increased (region II). This decrease in dot density was attributed to quantum dot ripening. For a short SIT (7 s), the dot density was maintained without the ripening. In region III, the dot density was nearly constant value [(1.2–1.4) × 1011 cm‑2], despite the different SITs. In addition, the dot size was limited by stable {011} facets, and an inhomogeneous broadening of dot size distribution was improved. However, for a long SIT (50 s), small dots remained owing to the ripening. In region IV, coalescence occurred, and the density of giant dots slightly increased.

  16. Atomic physics

    International Nuclear Information System (INIS)

    Held, B.

    1991-01-01

    This general book describes the change from classical physics to quantum physics. The first part presents atom evolution since antiquity and introduces fundamental quantities and elements of relativity. Experiments which have contributed to the evolution of knowledge on matter are analyzed in the second part. Applications of wave mechanics to the study of matter properties are presented in the third part [fr

  17. Atomic Power

    African Journals Online (AJOL)

    Atomic Power. By Denis Taylor: Dr. Taylor was formerly Chief UNESCO Advisor at the University. College, Nairobi, Kenya and is now Professor of Electrical Engineering in the Uni- versity of Strachlyde, Scotland. He is a leading scientist in the electronics field. He was among the British scientists who developed radar during ...

  18. Atomic Power

    African Journals Online (AJOL)

    that atom-produced electricity began to be more economic than electricity produced by conventional means. In the A.G.R., the uranium metal fuel elements are replaced by uranium dioxide, the higher gas temperatures permitting a more efficient steam cycle and allowing several economies. Initially a reactor of this type was ...

  19. Atomic Warrior

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 6; Issue 9. Atomic Warrior. Shabhana Narasimhan. Book Review Volume 6 Issue 9 September 2001 pp 106-109. Fulltext. Click here to view fulltext PDF. Permanent link: http://www.ias.ac.in/article/fulltext/reso/006/09/0106-0109. Author Affiliations.

  20. Thermodynamic study on the complexation of Trivalent actinide and lanthanide cation by N-donor ligands in homogeneous conditions; Etude thermodynamique de la complexation des ions actinide (III) et lanthanide (III) par des ligands polyazotes en milieu homogene

    Energy Technology Data Exchange (ETDEWEB)

    Miguirditchian, M

    2004-07-01

    Polydentate N-donor ligands, alone or combined with a synergic acid, may selectively extract minor actinides(III) from lanthanide(III) ions, allowing to develop separation processes of long-live radioelements. The aim of the researches carried out during this thesis was to better understand the chemical mechanisms of the complexation of f-elements by Adptz, a tridentate N-donor ligand, in homogeneous conditions. A thermodynamic approach was retained in order to estimate, from an energetic point of view, the influence of the different contributions to the reaction, and to acquire a complete set of thermodynamic data on this reaction. First, the influence of the nature of the cation on the thermodynamics was considered. The stability constants of the 1/1 complexes were systematically determined by UV-visible spectrophotometry for every lanthanide ion (except promethium) and for yttrium in a mixed solvent methanol/water in volume proportions 75/25%. The thermodynamic parameters ({delta}H{sup 0} {delta}{sup S}) of complexation were estimated by the van't Hoff method and by micro-calorimetry. The trends of the variations across the lanthanide series are compared with similar studies. The same methods were applied to the study of three actinide(III) cations: plutonium, americium and curium. The comparison of these values with those obtained for the lanthanides highlights the increase of stability of these complexes by a factor of 20 in favor of the actinide cations. This gap is explained by a more exothermic reaction and is associated, in the data interpretation, to a higher covalency of the actinide(III)-nitrogen bond. Then, the influence of the change of solvent composition on the thermodynamic of complexation was studied. The thermodynamic parameters of the complexation of europium(III) by Adptz were determined for several fractions of methanol. The stability of the complex formed increases with the percentage of methanol in the mixed solvent, owing to an

  1. Utilization of mixed ligands to construct diverse Ni(II)-coordination polymers based on terphenyl-2,2′,4,4′-tetracarboxylic acid and varied N-donor co-ligands

    International Nuclear Information System (INIS)

    Wang, Chao; Zhao, Jun; Xia, Liang; Wu, Xue-Qian; Wang, Jian-Fang; Dong, Wen-Wen; Wu, Ya-Pan

    2016-01-01

    Three new coordination polymers, namely, {[Ni(H 2 L)(bix)(H 2 O) 2 ]·2h 2 O} n (1), {[Ni(HL)(Hdpa)(H 2 O) 2 ]·H 2 O} n (2), {[Ni(L) 0.5 (bpp)(H 2 O)]·H 2 O} n (3) (H 4 L=terphenyl-2,2′,4,4′-tetracarboxylic acid; bix=1,4-bis(imidazol-1-ylmethyl)benzene; dpa =4,4′-dipyridylamine; bpp=1,3-bis(4-pyridyl)propane), based on rigid H 4 L ligand and different N-donor co-ligands, have been synthesized under hydrothermal conditions. Compound 1 features a 3D 4-connected 6 6 -dia-type framework with H 4 L ligand adopts a μ 2 -bridging mode with two symmetry-related carboxylate groups in μ 1 -η 1 :η 0 monodentate mode. Compound 2 displays a 1D [Ni(HL)(Hdpa)] n ribbon chains motif, in which the H 4 L ligand adopts a μ 2 -bridging mode with two carboxylate groups in μ 1 -η 1 :η 1 and μ 1 -η 1 :η 0 monodentate modes, while 3 possesses a (4,4)-connected 3D frameworks with bbf topology, with H 4 L ligand displays a μ 4 -bridging coordination mode. The H 4 L ligand displays not only different deprotonated forms but also diverse coordination modes and conformations. The structural diversities among 1–3 have been carefully discussed, and the roles of N-donor co-ligands in the self-assembly of coordination polymers have been well documented. - Graphical abstract: Three nickel coordination polymers with different architectures based on mixed ligand system were synthesized and structurally characterized. Topology analyses indicate that 1 shows the 4-connected 6 6 -dia net, 1D ribbon chains for 2 and 3D (4,4)-connected bbf network for 3. Display Omitted - Highlights: • Three Ni-based coordination polymers with distinct features have been prepared. • Compound 1 features a 3D 4-connected 66-dia-type framework, 2 displays a 1D [Ni(HL)(Hdpa)] n ribbon chains motif, while 3 possesses a (4,4)-connected 3D frameworks with bbf topology. • The “mixed ligand assembled” strategy is significant potential for network design.

  2. Extreme Harmonic Generation in an InAs Spin-Orbit Qubit

    Science.gov (United States)

    Stehlik, J.; Schroer, M. D.; Maialle, M. Z.; Degani, M. H.; Petta, J. R.

    2014-03-01

    Strong spin-orbit materials have shown great promise in the field of quantum computation. Unlike conventional semiconductor materials, fast all-electrical control is achieved through electric dipole spin resonance (EDSR). In this work we explore EDSR in an InAs nanowire spin-orbit qubit. We observe signs of harmonic generation where spin flips occur at the resonance condition nhf = gμB B , where f is the applied frequency, B is the magnetic field, g is the g-factor and n is an integer. Near the interdot charge transition we observe harmonics up to n = 8, indicating extreme harmonic generation. At far detuning we only observe the n = 1 resonance. Further, we find odd/even structure in the harmonic response: odd harmonics result in an increase in the leakage current while even harmonics result in its suppression. Finally we observe oscillations in the resonant current as a function of detuning. The striking detuning dependence suggests that the harmonics may be caused by Landau-Zener transitions occurring due to the anti-crossing between the differing charge states. Numerical simulations of the system are qualitatively consistent with this picture. Funded by the Sloan and Packard Foundations, the NSF, and the Army Research Office. M.Z.M. and M.H.D. were funded by Fundação de Amparo à Pesquisa de São Paulo (Fapesp) and INCT-DISSE/CNPq, Brazil.

  3. Mid-Infrared Photoconductivity in Self-Assembled InAs Quantum Dots

    Science.gov (United States)

    Berryman, K. W.; Lyon, S. A.; Segev, Mordechai

    1997-03-01

    Observations of mid-infrared photoconductivity in self-assembled InAs quantum dots are observed. The dots, which self-assemble into squat pyramidal shapes approximately 10 nm on a side and 2-3 nm high, are grown using standard molecular beam epitaxy techniques and coherently strained in a matrix of Al_0.3Ga_0.7As which has been grown on a GaAs substrate. Using a variety of cladding structures and dots doped with electrons, normal incidence photoconductivity has been measured at a range of wavelengths in the mid-infrared. Observations at different sample temperatures and applied bias allows discrimination and explanation of different tranistion processes, including excitation of carriers from the ground state of the dots into both excited states and the continuum. Photoluminescence and electroluminescence experiments are in good agreement with the observed optical transitions. The large optical response of these quantum dot samples suggests possible future use as novel mid-infrared detectors. Infrared photoconductivity is investigated for several different dot structures, and the possibility of further optimization of self-assembled quantum dots for both mid-infrared detection and emission will be discussed.

  4. An Integrated Nonlinear Analysis library - (INA) for solar system plasma turbulence

    Science.gov (United States)

    Munteanu, Costel; Kovacs, Peter; Echim, Marius; Koppan, Andras

    2014-05-01

    We present an integrated software library dedicated to the analysis of time series recorded in space and adapted to investigate turbulence, intermittency and multifractals. The library is written in MATLAB and provides a graphical user interface (GUI) customized for the analysis of space physics data available online like: Coordinated Data Analysis Web (CDAWeb), Automated Multi Dataset Analysis system (AMDA), Planetary Science Archive (PSA), World Data Center Kyoto (WDC), Ulysses Final Archive (UFA) and Cluster Active Archive (CAA). Three main modules are already implemented in INA : the Power Spectral Density (PSD) Analysis, the Wavelet and Intemittency Analysis and the Probability Density Functions (PDF) analysis.The layered structure of the software allows the user to easily switch between different modules/methods while retaining the same time interval for the analysis. The wavelet analysis module includes algorithms to compute and analyse the PSD, the Scalogram, the Local Intermittency Measure (LIM) or the Flatness parameter. The PDF analysis module includes algorithms for computing the PDFs for a range of scales and parameters fully customizable by the user; it also computes the Flatness parameter and enables fast comparison with standard PDF profiles like, for instance, the Gaussian PDF. The library has been already tested on Cluster and Venus Express data and we will show relevant examples. Research supported by the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement no 313038/STORM, and a grant of the Romanian Ministry of National Education, CNCS UEFISCDI, project number PN-II-ID PCE-2012-4-0418.

  5. Atom-surface potentials and atom interferometry

    International Nuclear Information System (INIS)

    Babb, J.F.

    1998-01-01

    Long-range atom-surface potentials characterize the physics of many actual systems and are now measurable spectroscopically in deflection of atomic beams in cavities or in reflection of atoms in atomic fountains. For a ground state, spherically symmetric atom the potential varies as -1/R 3 near the wall, where R is the atom-surface distance. For asymptotically large distances the potential is weaker and goes as -1/R 4 due to retardation arising from the finite speed of light. This diminished interaction can also be interpreted as a Casimir effect. The possibility of measuring atom-surface potentials using atomic interferometry is explored. The particular cases studied are the interactions of a ground-state alkali-metal atom and a dielectric or a conducting wall. Accurate descriptions of atom-surface potentials in theories of evanescent-wave atomic mirrors and evanescent wave-guided atoms are also discussed. (author)

  6. Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

    2009-06-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  7. 99mTc-MIBI/123I-Na subtraction scanning for localized parathyroid adenoma in patients with asymptomatic/mild primary hyperparathyroidism

    International Nuclear Information System (INIS)

    Tanaka, Yuji; Funahashi, Hiroomi; Imai, Tsuneo

    1996-01-01

    Primary hyperparathyroidism is most commonly detected as a mild elevation of the serum calcium concentration. In the present study, the utility of 99m Tc-methoxyisobutylisonitrile (MIBI) imaging before initial surgery was evaluated for localizing abnormal parathyroid glands in patients with asymptomatic and mild primary hyperparathyroidism. The results were compared with those of thallium-technetium subtraction scanning (TTSS). 99m Tc-MIBI/ 123 I-Na subtraction scanning was performed in 11 patients, and TTSS was performed in 10 of them. The sensitivity was 100% and the positive predictive value was 92% for 99m Tc-MIBI/ 123 I-Na, while the sensitivity was 50% and the positive predictive value was 100% for TTSS. The smallest gland detected weighed 85 mg in 99m Tc-MIBI/ 123 I-Na, and 570 mg in TTSS. There was a difference between the median weight of adenomas which were detected by 99m Tc-MIBI/ 123 I-Na (754 mg), and those which were detected by TTSS (1,195 mg). These results suggest that TTSS parathyroid scintigraphy could give way to 99m Tc-MIBI/ 123 I-Na parathyroid scintigraphy for improved detection of low-weight abnormal parathyroid glands. (author)

  8. Dampak Biaya Laboratorium Terhadap Kesenjangan Tarif INA-CBGs dan Biaya Riil Diagnosis Leukemia

    Directory of Open Access Journals (Sweden)

    Diah Indriani

    2013-05-01

    Full Text Available Selama penerapan Diagnosis Related Group di Rumah Sakit Umum Pusat (RSUP Dr. Sardjito, terjadi kesenjangan tarif biaya riil pelayanan kesehatan dengan tarif Indonesia Case Base Groups (INA-CBGs. Penyebab terbesar kesenjangan tarif tersebut adalah pelayanan obat dan penggunaan sumber daya laboratorium yang tidak efisien. Biaya pelayanan penunjang medis untuk pasien leukemia limfoblastik akut adalah sekitar 23,8% dari total biaya pelayanan kesehatan. Penelitian ini bertujuan untuk mengetahui tingkat efisiensi penggunan sumber daya laboratorium dan pengaruh terhadap kesenjangan tarif. Penelitian ini menganalisis semua rekam medis dan data biaya pelayanan laboratorium pasien leukemia limfoblastik akut tahun 2009 _ 2010 di RSUP Dr. Sardjito Yogyakarta. Pemeriksaan kimia klinik menunjukkan pola pasien yang semakin parah, proporsi biaya pemeriksaan kimia klinik semakin rendah. Kondisi ini juga terjadi pada pemeriksaan radiologi, urine dan tinja rutin. Sementara pada pemeriksaan hematologi, mikrobiologi, dan imunologi/serologi menunjukkan pola semakin parah pasien maka semakin tinggi proporsi biaya pemeriksaan. Analisis regresi menemukan pemeriksaan kimia klinik meliputi mikrobiologi darah, ureum, magnesium, creatine kinase MB (blood menyebabkan kesenjangan tarif semakin meningkat atau rumah sakit semakin dirugikan. Model regresi linier ini mempunyai nilai R2 sebesar 0,834 dengan nilai F = 84,475 (P < 0,05. Ketidakefisienan penggunaan sumber daya laboratorium pada pemeriksaan kimia klinik terdapat pada kelompok pasien tingkat keparahan ringan. Problems occurred during the implementation of Diagnosis Related Group in Sardjito Hospital Yogyakarta. There was gap price between the real cost of health care and Indonesia Case Base Groups (INA-CBGs cost. The cause of the gap price was drug delivery and use of laboratory resources inefficiently. Cost of medical support services for acute lymphoblactic leukemia patients about 23.8% of the total cost of health

  9. Strategic planning of INA-CORS development for public service and tectonic deformation study

    Science.gov (United States)

    Syetiawan, Agung; Gaol, Yustisi Ardhitasari Lumban; Safi'i, Ayu Nur

    2017-07-01

    GPS technology can be applied for surveying, mapping and research purposes. The simplicity of GPS technology for positioning make it become the first choice for survey compared with another positioning method. GPS can measure a position with various accuracy level based on the measurement method. In order to facilitate the GPS positioning, many organizations are establishing permanent GPS station. National Geodetic Survey (NGS) called it as Continuously Operating Reference Stations (CORS). Those devices continuously collect and record GPS data to be used by users. CORS has been built by several government agencies for particular purposes and scattered throughout Indonesia. Geospatial Information Agency (BIG) as a geospatial information providers begin to compile a grand design of Indonesia CORS (INA-CORS) that can be used for public service such as Real Time Kinematic (RTK), RINEX data request, or post-processing service and for tectonic deformation study to determine the deformation models of Indonesia and to evaluate the national geospatial reference system. This study aims to review the ideal location to develop CORS network distribution. The method was used is to perform spatial analysis on the data distribution of BIG and BPN CORS overlayed with Seismotectonic Map of Indonesia and land cover. The ideal condition to be achieved is that CORS will be available on each radius of 50 km. The result showed that CORS distribution in Java and Nusa Tenggara are already tight while on Sumatra, Celebes and Moluccas are still need to be more tighten. Meanwhile, the development of CORS in Papua will encounter obstacles toward road access and networking. This analysis result can be used as consideration for determining the priorities of CORS development in Indonesia.

  10. Atom Skimmers and Atom Lasers Utilizing Them

    Science.gov (United States)

    Hulet, Randall; Tollett, Jeff; Franke, Kurt; Moss, Steve; Sackett, Charles; Gerton, Jordan; Ghaffari, Bita; McAlexander, W.; Strecker, K.; Homan, D.

    2005-01-01

    Atom skimmers are devices that act as low-pass velocity filters for atoms in thermal atomic beams. An atom skimmer operating in conjunction with a suitable thermal atomic-beam source (e.g., an oven in which cesium is heated) can serve as a source of slow atoms for a magneto-optical trap or other apparatus in an atomic-physics experiment. Phenomena that are studied in such apparatuses include Bose-Einstein condensation of atomic gases, spectra of trapped atoms, and collisions of slowly moving atoms. An atom skimmer includes a curved, low-thermal-conduction tube that leads from the outlet of a thermal atomic-beam source to the inlet of a magneto-optical trap or other device in which the selected low-velocity atoms are to be used. Permanent rare-earth magnets are placed around the tube in a yoke of high-magnetic-permeability material to establish a quadrupole or octupole magnetic field leading from the source to the trap. The atoms are attracted to the locus of minimum magnetic-field intensity in the middle of the tube, and the gradient of the magnetic field provides centripetal force that guides the atoms around the curve along the axis of the tube. The threshold velocity for guiding is dictated by the gradient of the magnetic field and the radius of curvature of the tube. Atoms moving at lesser velocities are successfully guided; faster atoms strike the tube wall and are lost from the beam.

  11. Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    International Nuclear Information System (INIS)

    Seredin, P. V.; Domashevskaya, E. P.; Lukin, A. N.; Arsent'ev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

    2008-01-01

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

  12. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-06-03

    We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

  13. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    International Nuclear Information System (INIS)

    Alonso-Gonzalez, Pablo; Gonzalez, Luisa; Gonzalez, Yolanda; Fuster, David; Fernandez-Martinez, Ivan; Martin-Sanchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates

  14. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Alonso-Gonzalez, Pablo [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Gonzalez, Luisa [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Gonzalez, Yolanda [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Fuster, David [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Fernandez-Martinez, Ivan [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Martin-Sanchez, Javier [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Abelmann, Leon [SMI, MESA Institute of Nanotechnology, University of Twente, PO Box 217, 7500 AE, Enschede (Netherlands)

    2007-09-05

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.

  15. Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

    Energy Technology Data Exchange (ETDEWEB)

    Xie, H. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287-6106 (United States); Prioli, R. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Departamento de Física, Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro 22452-900 RJ (Brazil); Fischer, A. M.; Ponce, F. A., E-mail: ponce@asu.edu [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Kawabata, R. M. S.; Pinto, L. D.; Souza, P. L. [LabSem, CETUC, Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro 22452-900 RJ (Brazil); Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Jakomin, R. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Campus de Xerem, UFRJ, Duque de Caxias-RJ (Brazil); Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores – DISSE – PUC-Rio, RJ (Brazil); Instituto de Física, UFRJ, Rio de Janeiro-RJ (Brazil)

    2016-07-21

    The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

  16. Atomic magnetometer

    Science.gov (United States)

    Schwindt, Peter [Albuquerque, NM; Johnson, Cort N [Albuquerque, NM

    2012-07-03

    An atomic magnetometer is disclosed which uses a pump light beam at a D1 or D2 transition of an alkali metal vapor to magnetically polarize the vapor in a heated cell, and a probe light beam at a different D2 or D1 transition to sense the magnetic field via a polarization rotation of the probe light beam. The pump and probe light beams are both directed along substantially the same optical path through an optical waveplate and through the heated cell to an optical filter which blocks the pump light beam while transmitting the probe light beam to one or more photodetectors which generate electrical signals to sense the magnetic field. The optical waveplate functions as a quarter waveplate to circularly polarize the pump light beam, and as a half waveplate to maintain the probe light beam linearly polarized.

  17. High Atom Number in Microsized Atom Traps

    Science.gov (United States)

    2015-12-14

    Final Performance Report on ONR Grant N00014-12-1-0608 High atom number in microsized atom traps for the period 15 May 2012 through 14 September...TYPE Final Technical Report 3. DATES COVERED (From - To) 05/15/2012-09/14/2012 4. TITLE AND SUBTITLE High atom number in microsized atom traps...forces for implementing a small-footprint, large-number atom -chip instrument. Bichromatic forces rely on absorption and stimulated emission to produce

  18. Deep Centers at the Interface in In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Domashevskaya, E. P. [Voronezh State University of Engineering Technologies (Russian Federation); Mikhailyuk, E. A. [Branch of the National Research Technological University MISiS, Stary Oskol Technological Institute (Russian Federation); Prokopova, T. V. [Military Training and Research Center “Zhukovskii and Gagarin Air Force Academy” (Russian Federation); Bezryadin, N. N., E-mail: gazon1978@yandex.ru [Voronezh State University of Engineering Technologies (Russian Federation)

    2016-03-15

    The methods of admittance, I–V, and C–V characteristics are used to investigate In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs heterostructures obtained by the technologies of quasi-closed volume and deposition. The spectrum of the distribution of local energy levels at the interface is established. A new acceptor center with an energy of 0.36 eV alongside the known donor level with an energy of 0.5 eV is found by the method of admittance. The acceptor-center concentration N{sub t} depends on the method of fabrication and technological modes. The kinetics of generation–recombination processes in the temperature range of 70–400 K does not affect the insulating properties of the In{sub 2}Te{sub 3} or In{sub 2x}Ga{sub 2(1–x)}Te{sub 3} (x ≈ 0.65) dielectric layer; therefore, the possibility of their use as heterostructures for field-effect transistors is demonstrated.

  19. Dengue virus photo-inactivated in presence of 1,5-iodonaphthylazide (INA) or AMT, a psoralen compound (4′-aminomethyl-trioxsalen) is highly immunogenic in mice

    Science.gov (United States)

    Raviprakash, Kanakatte; Sun, Peifang; Raviv, Yossef; Luke, Thomas; Martin, Nicholas; Kochel, Tadeusz

    2013-01-01

    Two novel methods of dengue virus inactivation using iodonaphthyl azide (INA) and aminomethyl trioxsalen (AMT) were compared with traditional virus inactivation by formaldehyde. The AMT inactivated dengue-2 virus retained its binding to a panel of 5 monoclonal antibodies specific for dengue-2 envelope protein, whereas inactivation by formaldehyde and INA led to 30–50% decrease in binding. All three inactivated viruses elicited high level virus neutralizing antibodies in vaccinated mice. However, only mice vaccinated with AMT inactivated virus mounted T cell responses similar to live, uninactivated virus. PMID:23835446

  20. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

    International Nuclear Information System (INIS)

    Peleshchak, R. M.; Guba, S. K.; Kuzyk, O. V.; Kurilo, I. V.; Dankiv, O. O.

    2013-01-01

    The distribution of hydrostatic strains in Bi 3+ -doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi → As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

  1. Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.

    Science.gov (United States)

    Nylund, Gustav; Storm, Kristian; Lehmann, Sebastian; Capasso, Federico; Samuelson, Lars

    2016-02-10

    III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.

  2. Simple synthesis of ultra-high quality In2S3 thin films on InAs substrates

    Science.gov (United States)

    Sim, Yumin; Kim, Jinbae; Seong, Maeng-Je

    We report a simple and reliable technique to synthesize high-quality In2S3 films on device-ready substrate, such as InAs substrates for useful device applications, by using thermal sulfurization in a hot-wall tube furnace. The crystal structure and composition were studied by using X-ray diffraction and energy dispersive X-ray, and the results confirmed that the synthesized In2S3 films were cubic β-In2S or tetragonal β-In2S3, depending on growth conditions. Morphology, vibrational modes, and optical properties were investigated by using field emission scanning electron microscopy, Raman, and photoluminescence spectroscopy, and the results indicated that the In2S3 films are remarkable crystal quality with substantial efficiency in photoluminescence. Especially, by optimizing the growth conditions, we have grown an extremely high-quality tetragonal β-In2S3 thin film firmly remained on the InAs substrate, for the first time. National Research Foundation of Korea.

  3. Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

    Energy Technology Data Exchange (ETDEWEB)

    Sortica, Mauricio A.; Canut, Bruno; Chauvin, Nicolas [Institut des Nanotechnologies de Lyon INL-UMR5270, INSA - Lyon, CNRS, 7 av. Jean Capelle, 69621, Villeurbanne (France); Hatori, Masahiro; Dias, Johnny F. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul IF-UFRGS, av. Bento Goncalves 9500, 91501-970, Porto Alegre - RS (Brazil); Marty, Olivier [Institut des Nanotechnologies de Lyon INL-UMR5270, Universite Claude Bernard Lyon 1, 8 rue Andre-Marie Ampere, 69622, Villeurbanne (France)

    2015-12-15

    Si (100) wafers were implanted at 500 C with 250 keV As ions and 350 keV In ions in this order. The implantations were carried out with three different fluences, namely 1 x 10{sup 16}, 2 x 10{sup 16}, and 5 x 10{sup 16} cm{sup -2}. The samples were annealed with rapid thermal annealing (RTA) for 30 s at temperatures ranging from 800 up to 1000 C. Different techniques like photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) were employed to characterize the samples. Finally, scanning and transmission electron microscopy (SEM and TEM, respectively) provided further structural information of the InAs nanoclusters. The results indicate that InAs nanoprecipitates are formed after RTA treatment. Moreover, a broad photoluminescence peak was observed in all samples submitted to RTA. RBS results reveal that losses of implanted ions due to diffusion processes can be minimized through the use of RTA, depending of the fluence of ion implantation. Finally, the present results suggest that the photoluminescence yield depends on the degree of the radiation damage induced in the Si matrix during the implantation process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Direct radiocarbon dates for Vindija G1 and Velika Pećina Late Pleistocene hominid remains

    Science.gov (United States)

    Smith, Fred H.; Trinkaus, Erik; Pettitt, Paul B.; Karavanić, Ivor; Paunović, Maja

    1999-01-01

    New accelerator mass spectrometry radiocarbon dates taken directly on human remains from the Late Pleistocene sites of Vindija and Velika Pećina in the Hrvatsko Zagorje of Croatia are presented. Hominid specimens from both sites have played critical roles in the development of current perspectives on modern human evolutionary emergence in Europe. Dates of ≈28 thousand years (ka) before the present (B.P.) and ≈29 ka B.P. for two specimens from Vindija G1 establish them as the most recent dated Neandertals in the Eurasian range of these archaic humans. The human frontal bone from Velika Pećina, generally considered one of the earliest representatives of modern humans in Europe, dated to ≈5 ka B.P., rendering it no longer pertinent to discussions of modern human origins. Apart from invalidating the only radiometrically based example of temporal overlap between late Neandertal and early modern human fossil remains from within any region of Europe, these dates raise the question of when early modern humans first dispersed into Europe and have implications for the nature and geographic patterning of biological and cultural interactions between these populations and the Neandertals. PMID:10535913

  5. The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

    Science.gov (United States)

    Ullah, A. R.; Joyce, H. J.; Tan, H. H.; Jagadish, C.; Micolich, A. P.

    2017-11-01

    We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N2 and O2, and N2 bubbled through liquid H2O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

  6. MATLAB implementation of a dynamic clamp with bandwidth >125 KHz capable of generating INa at 37°C

    Science.gov (United States)

    Clausen, Chris; Valiunas, Virginijus; Brink, Peter R.; Cohen, Ira S.

    2012-01-01

    We describe the construction of a dynamic clamp with bandwidth >125 KHz that utilizes a high performance, yet low cost, standard home/office PC interfaced with a high-speed (16 bit) data acquisition module. High bandwidth is achieved by exploiting recently available software advances (code-generation technology, optimized real-time kernel). Dynamic-clamp programs are constructed using Simulink, a visual programming language. Blocks for computation of membrane currents are written in the high-level matlab language; no programming in C is required. The instrument can be used in single- or dual-cell configurations, with the capability to modify programs while experiments are in progress. We describe an algorithm for computing the fast transient Na+ current (INa) in real time, and test its accuracy and stability using rate constants appropriate for 37°C. We then construct a program capable of supplying three currents to a cell preparation: INa, the hyperpolarizing-activated inward pacemaker current (If), and an inward-rectifier K+ current (IK1). The program corrects for the IR drop due to electrode current flow, and also records all voltages and currents. We tested this program on dual patch-clamped HEK293 cells where the dynamic clamp controls a current-clamp amplifier and a voltage-clamp amplifier controls membrane potential, and current-clamped HEK293 cells where the dynamic clamp produces spontaneous pacing behavior exhibiting Na+ spikes in otherwise passive cells. PMID:23224681

  7. Bremsstrahlung in atom-atom collisions

    International Nuclear Information System (INIS)

    Amus'ya, M.Y.; Kuchiev, M.Y.; Solov'ev, A.V.

    1985-01-01

    It is shown that in the collision of a fast atom with a target atom when the frequencies are on the order of the potentials or higher, there arises bremsstrahlung comparable in intensity with the bremsstrahlung emitted by an electron with the same velocity in the field of the target atom. The mechanism by which bremsstrahlung is produced in atom-atom collisions is elucidated. Results of specific calculations of the bremsstrahlung spectra are given for α particles and helium atoms colliding with xenon

  8. "Bohr's Atomic Model."

    Science.gov (United States)

    Willden, Jeff

    2001-01-01

    "Bohr's Atomic Model" is a small interactive multimedia program that introduces the viewer to a simplified model of the atom. This interactive simulation lets students build an atom using an atomic construction set. The underlying design methodology for "Bohr's Atomic Model" is model-centered instruction, which means the central model of the…

  9. Relativistic elementary atoms

    International Nuclear Information System (INIS)

    Mrowczynski, S.

    1989-01-01

    The physics of relativistic elementary atoms,i.e. of Coulomb bound states of elementary particles, like positronium, pionium or an atom of μ + π - , is presented. The atom lifetimes and processes, in which the atoms are produced, are discussed. The interaction of the atoms with matter is also described. A simple derivation of most results is given. 33 refs. (author)

  10. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

    Science.gov (United States)

    Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

    2016-12-01

    The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

  11. Atom lasers and nonlinear atom optics

    International Nuclear Information System (INIS)

    Deng Lu

    2000-01-01

    Two recent experimental breakthroughs in the field of atomic physics are reported: the realization of a well-collimated, widely tunable, quasi-continuous wave atom laser, and the generation of matter waves via coherent multi-wave mixing. The former is a critical step towards a continuous wave, high brightness atom laser while the latter has opened a new field of research: nonlinear atom optics

  12. Atomic weight versus atomic mass controversy

    International Nuclear Information System (INIS)

    Holden, N.E.

    1985-01-01

    A problem for the Atomic Weights Commission for the past decade has been the controversial battle over the names ''atomic weight'' and ''atomic mass''. The Commission has considered the arguments on both sides over the years and it appears that this meeting will see more of the same discussion taking place. In this paper, I review the situation and offer some alternatives

  13. Self-assembled InAs quantum dots. Properties, modification and emission processes; Selbstorganisierte InAs-Quantenpunkte. Eigenschaften, Modifizierung und Emissionsprozesse

    Energy Technology Data Exchange (ETDEWEB)

    Schramm, A.

    2007-09-06

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  14. Teach us atom structure

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Suh Yeon

    2006-08-15

    This book is written to teach atom structure in very easy way. It is divided into nine chapters, which indicates what is the components of matter? when we divide matter continuously, it becomes atom, what did atom look like? particles comprised of matter is not only atom, discover of particles comprised of atom, symbol of element, various radiation, form alchemy to nuclear transmutation, shape of atom is evolving. It also has various pictures in each chapters to explain easily.

  15. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

    2011-01-01

    characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

  16. Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

    Science.gov (United States)

    Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

    2018-02-01

    We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

  17. BIAYA KLAIM INA CBGS DAN BIAYA RIIL PENYAKIT KATASTROPIK RAWAT INAP PESERTA JAMKESMAS DI RUMAH SAKIT STUDI DI 10 RUMAH SAKIT MILIK KEMENTERIAN KESEHATAN JANUARI–MARET 2012

    Directory of Open Access Journals (Sweden)

    Wasis Budiarto

    2013-08-01

    Full Text Available Latar belakang: Implementasi sistem INA-CBGs bagi pasien penyakit katastropik (jantung, kanker, stroke peserta Jamkesmas di rumah sakit, memberikan konsekuensi di satu pihak bahwa penyakit katastropik merupakan ancaman terhadap membengkaknya pembiayaan Jamkesmas di masa datang, sedangkan di pihak lain, rumah sakit merasakan bahwa biaya penggantian klaim INA CBGs lebih rendah dari tarif yang berlaku dirumah sakit. Tujuan: Tujuan penelitian ini untuk memperoleh gambaran biaya pengobatan penyakit katastropik dan perbandingan pembiayaan klaim berdasarkan INA-DRGs dengan biaya pengobatan riil penyakit katastropik dirumah sakit. Jenis penelitian adalah deskriptif menurut perspektif rumah sakit. Metode: Metode pengambilan data dilakukan secara retrospektif yang diambil dari penelusuran dokumen catatan medik pasien penyakit katastropik di 10 rumah sakit selama 3 bulan (Januari–Maret 2012. Analisis data dilakukan secara deskriptif. Hasil: Hasil penelitian menunjukkan bahwa pasien Jamkesmas yang dirawat dengan kasus katastropik terdiri dari penyakit jantung sebesar37,11%, penyakit kanker 23,54% dan sisanya sebesar 39,35% pasien penyakit stroke. Kesimpulan: Biaya pengobatan rawat inap berdasarkan tarif rumah sakit kelas A jauh lebih besar dibandingkan kelas B dan RS Khusus, biaya klaim berdasarkan INA-CBGs jauh lebih besar di rumah sakit kelas A dibanding kelas B dan RS Khusus. Komponen biaya yang banyak peruntukannya adalah biaya akomodasi, tindakan ruangan, pemeriksaan laboratorium, tindakan intervensi nonbedah untuk jantung, tindakan operasi untuk kanker serta biaya obat-obatan. Biaya penggantian klaim penyakit katastropik berdasarkan INA CBGs lebih besar dibandingkan dengan biaya riil berdasarkan tarif rumah sakit, sehingga untuk penyakit katastropik rumah sakit tidak merugi. Untuk itu pelaksanaan kebijakan rujukan berjenjang bagi peserta Jamkesmas harus diawasi secara ketat sehingga pelayanan kesehatan bagi penduduk miskin menjadi lebih terjamin

  18. Highly excited atoms

    International Nuclear Information System (INIS)

    Kleppner, D.; Littman, M.G.; Zimmerman, M.L.

    1981-01-01

    Highly excited atoms are often called Rydberg atoms. These atoms have a wealth of exotic properties which are discussed. Of special interest, are the effects of electric and magnetic fields on Rydberg atoms. Ordinary atoms are scarcely affected by an applied electric or magnetic field; Rydberg atoms can be strongly distorted and even pulled apart by a relatively weak electric field, and they can be squeezed into unexpected shapes by a magnetic field. Studies of the structure of Rydberg atoms in electric and magnetic fields have revealed dramatic atomic phenomena that had not been observed before

  19. International Active Surveillance Study of Women Taking Oral Contraceptives (INAS-OC Study

    Directory of Open Access Journals (Sweden)

    Assmann Anita

    2009-11-01

    Full Text Available Abstract Background A 24-day regimen of contraceptive doses of drospirenone and ethinylestradiol (DRSP/EE 24d was recently launched. This regimen has properties which may be beneficial for certain user populations (e.g., women suffering from premenstrual dysphoric disorder or acne. However, it is unknown whether this extended regimen has an impact on the cardiovascular risk associated with the use of oral contraceptives (OCs. The INternational Active Surveillance study of women taking Oral Contraceptives (INAS-OC is designed to investigate the short- and long-term safety of the new regimen in a population which is representative for the typical user of oral contraceptives. Methods/Design A large, prospective, controlled, non-interventional, long-term cohort study with active surveillance of the study participants has been chosen to ensure reliable and valid results. More than 2,000 gynecologists in the US and 5 European countries (Austria, Germany, Italy, Poland, and Sweden will recruit more than 80,000 OC users. The two to five year follow-up of these women will result in at least 220,000 documented women-years. The main clinical outcomes of interest for the follow-up are deep venous thrombosis, pulmonary embolism, acute myocardial infarction and cerebrovascular accidents. Secondary objectives are general safety, effectiveness and drug utilization pattern of DRSP/EE 24d, return to fertility after stop of OC use, as well as the baseline risk for users of individual OC formulations. Because of the non-interference character of this study, potential participants (first-time users or switchers are informed about the study only after the decision regarding prescription of a new OC. There are no specific medical inclusion or exclusion criteria. Study participation is voluntary and a written informed consent is required. After the baseline questionnaire, follow-up questionnaires will be mailed to the participants every 6 months for up to 5 years after

  20. Laser-assisted atom-atom collisions

    International Nuclear Information System (INIS)

    Roussel, F.

    1984-01-01

    The basic layer-assisted atom-atom collision processes are reviewed in order to get a simpler picture of the main physical facts. The processes can be separated into two groups: optical collisions where only one atom is changing state during the collision, the other acting as a spectator atom, and radiative collisions where the states of the two atoms are changing during the collision. All the processes can be interpreted in terms of photoexcitation of the quasimolecule formed during the collisional process. (author)

  1. Code ATOM for calculation of atomic characteristics

    International Nuclear Information System (INIS)

    Vainshtein, L.A.

    1990-01-01

    In applying atomic physics to problems of plasma diagnostics, it is necessary to determine some atomic characteristics, including energies and transition probabilities, for very many atoms and ions. Development of general codes for calculation of many types of atomic characteristics has been based on general but comparatively simple approximate methods. The program ATOM represents an attempt at effective use of such a general code. This report gives a brief description of the methods used, and the possibilities of and limitations to the code are discussed. Characteristics of the following processes can be calculated by ATOM: radiative transitions between discrete levels, radiative ionization and recombination, collisional excitation and ionization by electron impact, collisional excitation and ionization by point heavy particle (Born approximation only), dielectronic recombination, and autoionization. ATOM explores Born (for z=1) or Coulomb-Born (for z>1) approximations. In both cases exchange and normalization can be included. (N.K.)

  2. Radar Satellite Imagery and Automatic Detection of Water Bodies : Radarski satelitski snimci i automatsko otkrivanje vodenih površina

    Directory of Open Access Journals (Sweden)

    Klemen Čotar

    2016-12-01

    Full Text Available System for mapping of water bodies in Slovenia and its immediate neighbourhood with Sentinel-1 radar satellites have implemented. Algorithms automatically detect presence of new data in the archive, download the data, analyse it, write the results, and upload them to a web portal. New acquisitions are currently available every six days, but this time will be halved when the second Sentinel-1 starts delivering the data. : Implementiran je sistem za kartiranje vodenih površina u Sloveniji i u neposrednoj blizini sa Sentinel-1 radarskim satelitima. Algoritmi automatski otkrivaju prisutnost novih podataka u arhivu, preuzimaju podatake, analiziraju, objavljuju rezultate, te ih prenose na web-portal. Nove akvizicije su trenutno dostupne svakih šest dana, ali ovaj puta će vrijeme biti prepolovljeno, kada drugi Sentinel-1 počne sa isporukom podataka.

  3. Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties

    Directory of Open Access Journals (Sweden)

    Liang BL

    2007-01-01

    Full Text Available AbstractInAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100, GaAs (100 with a 2° misorientation angle towards [01−1], and GaAs (n11B (n = 9, 7, 5 substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100, which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.

  4. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

    International Nuclear Information System (INIS)

    Skiba-Szymanska, Joanna; Ward, Martin B; Ellis, David J P; Shields, Andrew J; Jamil, Ayesha; Farrer, Ian; Nicoll, Christine A; Griffiths, Jonathan P; Anderson, David; Jones, Geb A C; Ritchie, David A

    2011-01-01

    We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 μeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.

  5. Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Arrabal, R., E-mail: raquel.gonzalez.arrabal@upm.e [Instituto de Fusion Nuclear, ETSII, Universidad Politecnica de Madrid (UPM) C/ Jose Gutierrez Abascal, 2, E-28006 Madrid (Spain); Redondo-Cubero, A. [Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gonzalez, Y.; Gonzalez, L.; Martin-Gonzalez, M.S. [Instituto de Microelectronica de Madrid CSIC C/ Isaac Newton, 8. Tres Cantos, E-28760 Madrid (Spain)

    2011-04-15

    The lattice order degree and the strain in as-grown, Mn-implanted and post-implanted annealed InAs thin films were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements.

  6. Capacitance estimation for InAs Tunnel FETs by means of full-quantum k · p simulation

    Science.gov (United States)

    Gnani, E.; Baravelli, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.

    2015-06-01

    We report for the first time a quantum mechanical simulation study of gate capacitance components in aggressively scaled InAs Nanowire Tunnel Field-Effect Transistors. It will be shown that the gate-drain capacitance exhibits the same functional dependence over the whole Vgs range as the total gate capacitance, albeit with smaller values. However, as opposed to the previous capacitance estimations provided by semiclassical TCAD tools, we find that the gate capacitance exhibits a non-monotonic behavior vs. gate voltage, with plateaus and bumps related with energy quantization and subband formation determined by the device cross-sectional size, as well as with the position of channel-conduction subbands relative to the Fermi level in the drain contact. From this point of view, semiclassical TCAD tools seem to be inaccurate for capacitance estimation in aggressively-scaled TFET devices.

  7. Neutral atom traps.

    Energy Technology Data Exchange (ETDEWEB)

    Pack, Michael Vern

    2008-12-01

    This report describes progress in designing a neutral atom trap capable of trapping sub millikelvin atom in a magnetic trap and shuttling the atoms across the atom chip from a collection area to an optical cavity. The numerical simulation and atom chip design are discussed. Also, discussed are preliminary calculations of quantum noise sources in Kerr nonlinear optics measurements based on electromagnetically induced transparency. These types of measurements may be important for quantum nondemolition measurements at the few photon limit.

  8. Three-atom clusters

    International Nuclear Information System (INIS)

    Pen'kov, F.M.

    1998-01-01

    The Born-Oppenheimer approximation is used to obtain an equation for the effective interaction in three atoms bound by a single electron. For low binding energies in an 'electron + atom' pair, long-range forces arise between the atoms, leading to bound states when the size of the three-atom cluster is a few tens of angstrom. A system made of alkali-metal atoms is considered as an example

  9. Stable atomic hydrogen: Polarized atomic beam source

    International Nuclear Information System (INIS)

    Niinikoski, T.O.; Penttilae, S.; Rieubland, J.M.; Rijllart, A.

    1984-01-01

    We have carried out experiments with stable atomic hydrogen with a view to possible applications in polarized targets or polarized atomic beam sources. Recent results from the stabilization apparatus are described. The first stable atomic hydrogen beam source based on the microwave extraction method (which is being tested ) is presented. The effect of the stabilized hydrogen gas density on the properties of the source is discussed. (orig.)

  10. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    DEFF Research Database (Denmark)

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

    2011-01-01

    The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende,...... parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell....

  11. Atomic and molecular manipulation

    CERN Document Server

    Mayne, Andrew J

    2011-01-01

    Work with individual atoms and molecules aims to demonstrate that miniaturized electronic, optical, magnetic, and mechanical devices can operate ultimately even at the level of a single atom or molecule. As such, atomic and molecular manipulation has played an emblematic role in the development of the field of nanoscience. New methods based on the use of the scanning tunnelling microscope (STM) have been developed to characterize and manipulate all the degrees of freedom of individual atoms and molecules with an unprecedented precision. In the meantime, new concepts have emerged to design molecules and substrates having specific optical, mechanical and electronic functions, thus opening the way to the fabrication of real nano-machines. Manipulation of individual atoms and molecules has also opened up completely new areas of research and knowledge, raising fundamental questions of "Optics at the atomic scale", "Mechanics at the atomic scale", Electronics at the atomic scale", "Quantum physics at the atomic sca...

  12. Microfabricated Waveguide Atom Traps.

    Energy Technology Data Exchange (ETDEWEB)

    Jau, Yuan-Yu [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    A nanoscale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon-atom interactions . A neutral - atom platform based on this microfabrication technology will be prealigned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading cold atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano-waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.

  13. Advances in atomic spectroscopy

    CERN Document Server

    Sneddon, J

    2000-01-01

    This fifth volume of the successful series Advances in Atomic Spectroscopy continues to discuss and investigate the area of atomic spectroscopy.It begins with a description of the use of various atomic spectroscopic methods and applications of speciation studies in atomic spectroscopy. The emphasis is on combining atomic spectroscopy with gas and liquid chromatography. In chapter two the authors describe new developments in tunable lasers and the impact they will have on atomic spectroscopy. The traditional methods of detection, such as photography and the photomultiplier, and how they are being replaced by new detectors is discussed in chapter three. The very active area of glow discharge atomic spectrometry is presented in chapter four where, after a brief introduction and historical review, the use of glow discharge lamps for atomic spectroscopy and mass spectrometry are discussed. Included in this discussion is geometry and radiofrequency power. The future of this source in atomic spectroscopy is also dis...

  14. Atomic Fuel, Understanding the Atom Series. Revised.

    Science.gov (United States)

    Hogerton, John F.

    This publication is part of the "Understanding the Atom" series. Complete sets of the series are available free to teachers, schools, and public librarians who can make them available for reference or use by groups. Among the topics discussed are: What Atomic Fuel Is; The Odyssey of Uranium; Production of Uranium; Fabrication of Reactor…

  15. Atomic Fisher information versus atomic number

    International Nuclear Information System (INIS)

    Nagy, A.; Sen, K.D.

    2006-01-01

    It is shown that the Thomas-Fermi Fisher information is negative. A slightly more sophisticated model proposed by Gaspar provides a qualitatively correct expression for the Fisher information: Gaspar's Fisher information is proportional to the two-third power of the atomic number. Accurate numerical calculations show an almost linear dependence on the atomic number

  16. Atomic-fluorescence spectrophotometry

    International Nuclear Information System (INIS)

    Bakhturova, N.F.; Yudelevich, I.G.

    1975-01-01

    Atomic-fluorescence spectrophotometry, a comparatively new method for the analysis of trace quantities, has developed rapidly in the past ten years. Theoretical and experimental studies by many workers have shown that atomic-fluorescence spectrophotometry (AFS) is capable of achieving a better limit than atomic absorption for a large number of elements. The present review examines briefly the principles of atomic-fluorescence spectrophotometry and the types of fluorescent transition. The excitation sources, flame and nonflame atomizers, used in AFS are described. The limits of detection achieved up to the present, using flame and nonflame methods of atomization are given

  17. PHYSICS: Toward Atom Chips.

    Science.gov (United States)

    Fortágh, József; Zimmermann, Claus

    2005-02-11

    As a novel approach for turning the peculiar features of quantum mechanics into practical devices, researchers are investigating the use of ultracold atomic clouds above microchips. Such "atom chips" may find use as sensitive probes for gravity, acceleration, rotation, and tiny magnetic forces. In their Perspective, Fortagh and Zimmermann discuss recent advances toward creating atom chips, in which current-carrying conductors in the chips create magnetic microtraps that confine the atomic clouds. Despite some intrinsic limits to the performance of atom chips, existing technologies are capable of producing atom chips, and many possibilities for their construction remain to be explored.

  18. THE ORNL ATOM PROBE

    OpenAIRE

    Miller, M.

    1986-01-01

    The ORNL Atom Probe is a microanalytical tool for studies in materials science. The instrument is a combination of a customized version of the vacuum system of the VG FIM-100 atom probe, an ORNL-designed microcomputer-controlled digital timing system, and a double curved CEMA Imaging Atom Probe detector. The atom probe combines four instruments into one - namely a field ion microscope, an energy compensated time-of-flight mass spectrometer, an imaging atom probe, and a pulsed laser atom probe.

  19. Solução concentrada de albumina eqüina na fluidoterapia em eqüinos com desidratação leve a moderada

    OpenAIRE

    Belli,C.B.; Michima,L.E.S.; Latorre,S.M.; Fernandes,W.R.

    2008-01-01

    Avaliou-se o efeito da solução concentrada de albumina eqüina diluída a 5% em solução fisiológica (SF) durante fluidoterapia em eqüinos, após indução de desidratação leve a moderada, utilizando-se cinco eqüinos adultos, sem alterações clínicas. Cada animal passou por dois protocolos de fluidoterapia: apenas com SF (metade sob pressão e metade em fluxo contínuo - grupo-controle); com solução de albumina eqüina e SF (apenas em fluxo contínuo - grupo experimental). Avaliaram-se peso, exame físic...

  20. Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit.

    Science.gov (United States)

    Knutsson, Johan Valentin; Lehmann, Sebastian; Hjort, Martin; Lundgren, Edvin; Dick, Kimberly A; Timm, Rainer; Mikkelsen, Anders

    2017-10-24

    The perfect switching between crystal phases with different electronic structure in III-V nanowires allows for the design of superstructures with quantum wells only a single atomic layer wide. However, it has only been indirectly inferred how the electronic structure will vary down to the smallest possible crystal segments. We use low-temperature scanning tunneling microscopy and spectroscopy to directly probe the electronic structure of Zinc blende (Zb) segments in Wurtzite (Wz) InAs nanowires with atomic-scale precision. We find that the major features in the band structure change abruptly down to a single atomic layer level. Distinct Zb electronic structure signatures are observed on both the conduction and valence band sides for the smallest possible Zb segment: a single InAs bilayer. We find evidence of confined states in the region of both single and double bilayer Zb segments indicative of the formation of crystal segment quantum wells due to the smaller band gap of Zb as compared to Wz. In contrast to the internal electronic structure of the nanowire, surface states located in the band gap were found to be only weakly influenced by the presence of the smallest Zb segments. Our findings directly demonstrate the feasibility of crystal phase switching for the ultimate limit of atomistic band structure engineering of quantum confined structures. Further, it indicates that band gap values obtained for the bulk are reasonable to use even for the smallest crystal segments. However, we also find that the suppression of surface and interface states could be necessary in the use of this effect for engineering of future electronic devices.

  1. Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire

    International Nuclear Information System (INIS)

    Saravanan, S.; John Peter, A.; Lee, Chang Woo

    2014-01-01

    Excitons confined in an InAs 1−x P x /InP (x=0.2) quantum well wire are studied in the presence of magnetic field strength. Numerical calculations are carried out using variational approach within the single band effective mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is investigated in the influence of magnetic field strength taking into account the geometrical confinement effect. The magnetic field induced optical band as a function of wire radius is investigated in the InAs 0.8 P 0.2 /InP quantum well wire. The valence-band anisotropy is included in our theoretical model by employing different hole masses in different spatial directions. The optical gain as a function of incident photon energy is computed in the presence of magnetic field strength. The corresponding 1.55 μm wavelength is achieved for 40 Å InAs 0.8 P 0.2 /InP quantum well wire. We hope that the results could be used for the potential applications in fiber optic communications. -- Highlights: • Magnetic field induced excitons confined in a InAs 1−x P x /InP (x=0.2) quantum well wire are studied. • The compressive strain is included throughout the calculations. • The energy difference of the ground and the first excited state is investigated in the presence of magnetic field strength. • The magnetic field induced optical band with the geometrical confinement is studied. • The optical gain with the photon energy is computed in the presence of magnetic field strength

  2. Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Oswald, Jiří; Pangrác, Jiří; Zíková, Markéta; Kubištová, Jana; Komninou, Ph.; Kioseoglou, J.; Kuldová, Karla; Hulicius, Eduard

    2013-01-01

    Roč. 114, č. 17 (2013), "174305-1"-"174305-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S; GA MŠk 7AMB12GR034; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : quantum dots * metal-organic vapor phase epitaxy * InAs * GaAs * GaAsSb Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  3. Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

    International Nuclear Information System (INIS)

    Zhao, Z.M.; Hul'ko, O.; Kim, H.J.; Liu, J.; Shi, B.; Xie, Y.H.

    2005-01-01

    InAs self-assembled quantum dots (QDs) were grown on Si (001) substrates via molecular beam epitaxy. The size distribution and density of InAs QDs grown under different conditions were studied using plan-view transmission electron microscopy. Dot density was shown to strongly depend on arsenic beam equivalent pressure (BEP) ranging from 2.8x10 -5 to 1.2x10 -3 Pa. In contrast, dot density was nearly independent of substrate temperature from 295 to 410 deg. C under constant arsenic BEP, while broadening of size distribution was observed with increasing temperature. The mechanism accounting for some of the main features of the experimental observations is discussed. Finally, InAs quantum dots with optimized narrow size distribution and high density were grown at low arsenic BEP of 7.2 x10 -5 Pa and low temperature of 250 deg. C followed by annealing at arsenic BEP of 1.9 x10 -4 Pa and temperature of 410 deg. C

  4. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

    Science.gov (United States)

    Sharma, Nandlal; Reuter, Dirk

    2017-11-01

    Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

  5. Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 × 2-c(8 × 2)

    Science.gov (United States)

    de Padova, P.; Quaresima, C.; Perfetti, P.; Olivieri, B.; Richter, M. C.; Heckmann, O.; Zerrouki, M.; Pennesi, G.; Paoletti, A. M.; Rossi, G.; Hricovini, K.

    2006-03-01

    We investigated the electronic structure of ultra thin interface of organic titanium bis-phthalocyanine TiPc{2} deposited on InAs(001)(4× 2)c-(8× 2) clean surface, by means of high-resolution core-levels and valence band (VB) photoelectron spectroscopies. In4d, As3d, and C1s core levels were measured for different TiPc{2} thicknesses up to 1 monolayer. Surface core level shifts were found on both In4d and As3d core levels. These shifts originate from the interaction between 4× 2-c(8× 2) InAs reconstruction and organic molecules suggesting the presence of strong bounds. C1s core level exhibits a line shape attributed to the C-C and C-N bonds. The VB spectroscopy shows dramatic changes related to the interaction of the TiPc{2} molecule with the InAs related surface states.

  6. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    Energy Technology Data Exchange (ETDEWEB)

    Keizer, J. G.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands); Ulloa, J. M.; Utrilla, A. D. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  7. A Single Atom Antenna

    International Nuclear Information System (INIS)

    Trinter, Florian; Williams, Joshua B; Weller, Miriam; Waitz, Markus; Pitzer, Martin; Voigtsberger, Jörg; Schober, Carl; Kastirke, Gregor; Müller, Christian; Goihl, Christoph; Burzynski, Phillip; Wiegandt, Florian; Wallauer, Robert; Kalinin, Anton; Schmidt, Lothar Ph H; Schöffler, Markus S; Jahnke, Till; Dörner, Reinhard; Chiang, Ying-Chih; Gokhberg, Kirill

    2015-01-01

    Here we demonstrate the smallest possible implementation of an antenna-receiver complex which consists of a single (helium) atom acting as the antenna and a second (neon) atom acting as a receiver. (paper)

  8. Deep Space Atomic Clock

    Data.gov (United States)

    National Aeronautics and Space Administration — The Deep Space Atomic Clock (DSAC) project will develop a small, low mass atomic clock based on mercury-ion trap technology and demonstrate it in space providing the...

  9. Navigation with Atom Interferometers

    Science.gov (United States)

    2017-03-20

    Navigation with Atom Interferometers Mary F. Locke and Frank A. Narducci Avionics Department Naval Air Systems Command Patuxent River, Md...20670 Abstract: In this article, we review the basic physics of an atom interferometer. We highlight the usefulness of atom interferometers for...inertial navigation due to their high phase sensitivity to both linear acceleration and angular rotation, but also the drawback that a single atom

  10. Atomic Ferris wheel beams

    OpenAIRE

    Lembessis, Vasileios E.

    2017-01-01

    We study the generation of atom vortex beams in the case where an atomic wave-packet, moving in free space, is diffracted from a properly tailored light mask with a spiral transverse profile. We show how such a diffraction scheme could lead to the production of an atomic Ferris wheel beam.

  11. Atomic Energy Control Act

    International Nuclear Information System (INIS)

    1970-01-01

    This act provides for the establishment of the Atomic Energy Control Board. The board is responsible for the control and supervision of the development, application and use of atomic energy. The board is also considered necessary to enable Canada to participate effectively in measures of international control of atomic energy

  12. Atomic Spectra Database (ASD)

    Science.gov (United States)

    SRD 78 NIST Atomic Spectra Database (ASD) (Web, free access)   This database provides access and search capability for NIST critically evaluated data on atomic energy levels, wavelengths, and transition probabilities that are reasonably up-to-date. The NIST Atomic Spectroscopy Data Center has carried out these critical compilations.

  13. Atom-atom collision cascades localization

    International Nuclear Information System (INIS)

    Kirsanov, V.V.

    1980-01-01

    The presence of an impurity and thermal vibration influence on the atom-atom collision cascade development is analysed by the computer simulation method (the modificated dynamic model). It is discovered that the relatively low energetic cascades are localized with the temperature increase of an irradiated crystal. On the basis of the given effect the mechanism of splitting of the high energetic cascades into subcascades is proposed. It accounts for two factors: the primary knocked atom energy and the irradiated crystal temperature. Introduction of an impurity also localizes the cascades independently from the impurity atom mass. The cascades localization leads to intensification of the process of annealing in the cascades and reduction of the post-cascade vacancy cluster sizes. (author)

  14. GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

    Science.gov (United States)

    Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2017-04-01

    We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω1, ω2, and ω3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω1 - ω2 = ω2 - ω3) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω1 and ω2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω3 (= 2ω2 - ω1) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.

  15. Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire.

    Science.gov (United States)

    Wang, Ji-Yin; Huang, Shaoyun; Huang, Guang-Yao; Pan, Dong; Zhao, Jianhua; Xu, H Q

    2017-07-12

    A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anticrossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point at which all three QDs are on resonance with the Fermi level of the reservoirs can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and superexchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states.

  16. Role of Bruton's tyrosine kinase (BTK) in growth and metastasis of INA6 myeloma cells

    International Nuclear Information System (INIS)

    Bam, R; Venkateshaiah, S U; Khan, S; Ling, W; Randal, S S; Li, X; Zhang, Q; Rhee, F van; Barlogie, B; Epstein, J; Yaccoby, S

    2014-01-01

    Bruton's tyrosine kinase (BTK) and the chemokine receptor CXCR4 are linked in various hematologic malignancies. The aim of the study was to understand the role of BTK in myeloma cell growth and metastasis using the stably BTK knockdown luciferase-expressing INA6 myeloma line. BTK knockdown had reduced adhesion to stroma and migration of myeloma cells toward stromal cell-derived factor-1. BTK knockdown had no effect on short-term in vitro growth of myeloma cells, although clonogenicity was inhibited and myeloma cell growth was promoted in coculture with osteoclasts. In severe combined immunodeficient-rab mice with contralaterally implanted pieces of bones, BTK knockdown in myeloma cells promoted their proliferation and growth in the primary bone but suppressed metastasis to the contralateral bone. BTK knockdown myeloma cells had altered the expression of genes associated with adhesion and proliferation and increased mammalian target of rapamycin signaling. In 176 paired clinical samples, BTK and CXCR4 expression was lower in myeloma cells purified from a focal lesion than from a random site. BTK expression in random-site samples was correlated with proportions of myeloma cells expressing cell surface CXCR4. Our findings highlight intratumoral heterogeneity of myeloma cells in the bone marrow microenvironment and suggest that BTK is involved in determining proliferative, quiescent or metastatic phenotypes of myeloma cells

  17. MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers: A review

    Science.gov (United States)

    Viswanath, A. Kasi; Hiruma, K.; Yazawa, M.; Ogawa, K.; Katsuyama, T.

    1994-02-01

    Nanometer-size quantum whiskers of InAs and GaAs were fabricated by low-pressure MOCVD. Time-integrated and time-resolved photoluminescence of GaAs wires of diameters 200, 100, 70, and 50 nm were studied. The temperature dependence of PL peak energy was found to follow the same variation as the bandgap of GaAs, and Varshni's theory was used to explain the temperature dependence. The main channel of radiative recombination was found to be due to free excitons. The nonuniformity in diameter and lattice phonon interactions were considered to understand the origin of the linewidth. From the time-resolved PL, the surface recombination lifetimes were measured directly. Surface recombination velocities were evaluated and were correlated to wire diameter. The quantum-size-dependent spatial part of the electronic wave function was thought to be responsible for the variation of surface recombination velocity with diameter. Surface treatment with sulphur reduced the surface depletion layer, as evidenced from the time-resolved and time-integrated spectra. The carrier lifetime was in picosecond time scales at 7 K and increased with temperature, thus confirming the quantum confinement effects. The polarization experiments revealed the one-dimensional nature of quantum whiskers.

  18. Cold Atom Interferometry

    International Nuclear Information System (INIS)

    Zhan Mingsheng; Li Ke; Wang Ping; Kong Lingbo; Wang Xiaorui; Li Runbing; Tu Xianhua; He Lingxiang; Wang Jin; Lu Baolong

    2007-01-01

    In this article the recent experimental works on cold atoms carried out at Wuhan Institute of Physics and Mathematics (WIPM) are reported. These include the experimental realization of Bose-Einstein condensation (BEC), different type of cold atom interferometers, and bichromatic electromagnetically-induced transparency (EIT). We have realized Bose-Einstein condensates of 87 Rb dilute atomic gases. The apparatus consists of two horizontally mounted magneto-optic-traps (MOTs) and a QUIC magnetic trap. Nearly 3x10 8 atoms were trapped in the second MOT, and up to 1.2x10 8 atoms were adiabatically transferred to the QUIC trap. A pure condensate with about 1.1x10 5 atoms at about 30 nK was achieved. We also demonstrated two type of cold atom interferometers, the Sagnac and Ramsey interference fringes were recorded with contrast of up to 37%

  19. Elemental composition of 'normal' and Alzheimer brain tissue by INA and PIXE analyses

    International Nuclear Information System (INIS)

    Stedman, J.D.; Spyrou, N.M.

    1997-01-01

    Instrumental methods based on the nuclear and atomic properties of the elements have been used for many years to determine elemental concentrations in a variety of materials for biomedical, industrial and environmental applications. These methods offer high sensitivity for accurate trace element measurements, suffer few interfering or competing effects. Present no blank problems and are convenient for both research and routine analyses. The present article describes the use of two trace element techniques. Firstly the use of activation of stable nuclei irradiated by neutrons in the core of a low power research reactor as a means of detection of elements through the resulting gamma-rays emitted. Secondly, the observations of the interactions of energetic ion beams with the material in order to identify elemental species. Over recent years there has been some interest in determining the elemental composition of 'normal' and Alzheimer affected brain tissue, however literature findings are inconsistent. Possible reasons for discrepancies need to be identified for further progress to be made. Here, post-mortem tissue samples, provided by the Alzheimer's Disease Brain Bank, Institute of Psychiatry, London, were taken from the frontal, occipital, parietal and temporal lobes of both hemispheres of brains from 13 'normal' and 19 Alzheimer subjects. The elemental composition of the samples was determined using the analytical techniques of INAA (instrumental neutron activation analysis), RBS (Rutherford back-scattering) and PIXE (particle induced x-ray emission). The principal findings are summarised here. (author)

  20. Atoms - molecules - nuclei. Vol. 1

    International Nuclear Information System (INIS)

    Otter, G.; Honecker, R.

    1993-01-01

    This first volume covers the following topics: Wave-particle dualism, classical atomic physics; the Schroedinger equation, angular momentum in quantum physics, one-electron atoms and many-electron atoms with atomic structure, atomic spectra, exotic atoms, influence of electric and magnetic fields

  1. Atomic collisions research with excited atomic species

    International Nuclear Information System (INIS)

    Hoogerland, M.D.; Gulley, R.J.; Colla, M.; Lu, W.; Milic, D.; Baldwin, K.G.H.; Buckman, S.J.

    1999-01-01

    Measurements and calculations of fundamental atomic collision and spectroscopic properties such as collision cross sections, reaction rates, transition probabilities etc. underpin the understanding and operation of many plasma and gas-discharge-based devices and phenomena, for example plasma processing and deposition. In almost all cases the complex series of reactions which sustains the discharge or plasma, or produces the reactive species of interest, has a precursor electron impact excitation, attachment, dissociation or ionisation event. These processes have been extensively studied in a wide range of atomic and molecular species and an impressive data base of collision cross sections and reaction rates now exists. However, most of these measurements are for collisions with stable atomic or molecular species which are initially in their ground electronic state. Relatively little information is available for scattering from excited states or for scattering from unstable molecular radicals. Examples of such species would be metastable excited rare gases, which are often used as buffer gases, or CF 2 radicals formed by electron impact dissociation in a CF 4 plasma processing discharge. We are interested in developing experimental techniques which will enable the quantitative study of such exotic atomic and molecular species. In this talk I would like to outline one such facility which is being used for studies of collisions with metastable He(2 3 S) atoms

  2. Atomic and molecular sciences

    International Nuclear Information System (INIS)

    Lane, N.F.

    1989-01-01

    The theoretical atomic and molecular physics program at Rice University addresses basic questions about the collision dynamics of electrons, atoms, ions and molecules, emphasizing processes related to possible new energy technologies and other applications. The program focuses on inelastic collision processes that are important in understanding energy and ionization balance in disturbed gases and plasmas. Emphasis is placed on systems and processes where some experimental information is available or where theoretical results may be expected to stimulate new measurements. Examples of current projects include: excitation and charge-transfer processes; orientation and alignment of excited states following collisions; Rydberg atom collisions with atoms and molecules; Penning ionization and ion-pair formation in atom-atom collisions; electron-impact ionization in dense, high-temperature plasmas; electron-molecule collisions; and related topics

  3. Modern atomic physics

    CERN Document Server

    Natarajan, Vasant

    2015-01-01

    Much of our understanding of physics in the last 30-plus years has come from research on atoms, photons, and their interactions. Collecting information previously scattered throughout the literature, Modern Atomic Physics provides students with one unified guide to contemporary developments in the field. After reviewing metrology and preliminary material, the text explains core areas of atomic physics. Important topics discussed include the spontaneous emission of radiation, stimulated transitions and the properties of gas, the physics and applications of resonance fluorescence, coherence, cooling and trapping of charged and neutral particles, and atomic beam magnetic resonance experiments. Covering standards, a different way of looking at a photon, stimulated radiation, and frequency combs, the appendices avoid jargon and use historical notes and personal anecdotes to make the topics accessible to non-atomic physics students. Written by a leader in atomic and optical physics, this text gives a state-of-the...

  4. Time-resolved x-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

    International Nuclear Information System (INIS)

    Kakuda, Naoki; Yamaguchi, Koichi; Kaizu, Toshiyuki; Takahasi, Masamitu; Fujikawa, Seiji

    2010-01-01

    Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI. (author)

  5. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, J. L., E-mail: jlyu@semi.ac.cn [Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou (China); Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002 (China); Cheng, S. Y.; Lai, Y. F.; Zheng, Q. [Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou (China); Chen, Y. H., E-mail: yhchen@semi.ac.cn; Tang, C. G. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

    2015-01-07

    The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness of the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.

  6. Comparison between mini mental state examination (MMSE) and Montreal cognitive assessment Indonesian version (MoCA-Ina) as an early detection of cognitive impairments in post-stroke patients

    Science.gov (United States)

    Lestari, S.; Mistivani, I.; Rumende, C. M.; Kusumaningsih, W.

    2017-08-01

    Mild cognitive impairment (MCI) is defined as cognitive impairment that may never develop into dementia. Cognitive impairment is one long-term complication of a stroke. The Mini Mental State Examination (MMSE), which is commonly used as a screening tool for cognitive impairment, has a low sensitivity to detect cognitive impairment, especially MCI. Alternatively, the Montreal Cognitive Assessment Indonesian version (MoCA-Ina) has been reported to have a higher sensitivity than the MMSE. The aim of this study was to compare the proportion of MCI identified between the MMSE and MoCA-Ina in stroke patients. This was a cross-sectional study of stroke outpatients who attended the Polyclinic Neuromuscular Division, Rehabilitation Department, and Polyclinic Stroke, Neurology Department Cipto Mangunkusumo General Hospital, Jakarta. The proportion of MCI identified using the MMSE was 31.03% compared to 72.41% when using the MoCA-Ina. This difference was statistically significant (Fisher’s exact test, p = 0.033). The proportion of MCI in stroke patients was higher when using the MoCA-Ina compared to the MMSE. The MoCA-Ina should be used as an alternative in the early detection of MCI in stroke patients, especially those undergoing rehabilitation.

  7. Atomic Power Safety

    Energy Technology Data Exchange (ETDEWEB)

    Hogerton, John F

    1964-01-01

    This booklet is condensed from a larger publication, -Background Information on Atomic Power Safety-, published in January 1964, by the .Atomic Industrial Forum. That publication and this abridgment were produced in recognition of the emergence of commercial atomic power as an important factor in our national economy, and of the resulting need for readily available information in nontechnical form on the characteristics of nuclear power plants and on the various measures taken during their design, construction, and operation for public safety.

  8. Atomic physics made clear

    International Nuclear Information System (INIS)

    Meinhold, H.

    1980-01-01

    This book is a popular introduction into the foundations of atomic physics und quantum mechanics. Starting from some phenomenological concepts Bohr's model and the construction of the periodic system regarding the shell structure of atoms are introduced. In this framework the selection rules and magnetic moments of atomic electrons are considered. Finally the wave-particle dualism is considered. In the appendix some mathematical methods are described which are useful for a deeper penetration into the considered ideas. (HSI)

  9. Advances in atomic spectroscopy

    CERN Document Server

    Sneddon, J

    1997-01-01

    This series describes selected advances in the area of atomic spectroscopy. It is primarily intended for the reader who has a background in atmoic spectroscopy; suitable to the novice and expert. Although a widely used and accepted method for metal and non-metal analysis in a variety of complex samples, Advances in Atomic Spectroscopy covers a wide range of materials. Each Chapter will completely cover an area of atomic spectroscopy where rapid development has occurred.

  10. Atomic hydrogen reactor

    International Nuclear Information System (INIS)

    Massip de Turville, C.M.D.

    1982-01-01

    Methods are discussed of generating heat in an atomic hydrogen reactor which involve; the production of atomic hydrogen by an electrical discharge, the capture of nascent neutrons from atomic hydrogen in a number of surrounding steel alloy tubes having a high manganese content to produce 56 Mn, the irradiation of atomic hydrogen by the high energy antineutrinos from the beta decay of 56 Mn to yield nascent neutrons, and the removal of the heat generated by the capture of nascent neutrons by 55 Mn and the beta decay of 56 Mn. (U.K.)

  11. Atom dynamics in laser fields

    International Nuclear Information System (INIS)

    Jang, Su; Mi, No Gin

    2004-12-01

    This book introduces coherent dynamics of internal state, spread of atoms wave speed, semiclassical atoms density matrix such as dynamics equation in both still and moving atoms, excitation of atoms in movement by light, dipole radiating power, quantum statistical mechanics by atoms in movement, semiclassical atoms in movement, atoms in movement in the uniform magnetic field including effects of uniform magnetic field, atom cooling using laser such as Doppler cooling, atom traps using laser and mirrors, radiant heat which particles receive, and near field interactions among atoms in laser light.

  12. Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

    Science.gov (United States)

    Conti, G.; Nemšák, S.; Kuo, C.-T.; Gehlmann, M.; Conlon, C.; Keqi, A.; Rattanachata, A.; Karslıoǧlu, O.; Mueller, J.; Sethian, J.; Bluhm, H.; Rault, J. E.; Rueff, J. P.; Fang, H.; Javey, A.; Fadley, C. S.

    2018-05-01

    Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO4 and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO2/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

  13. [Exposure to benzene and hematologic changes in workers at the Ina-Oki Drnisplast factory in Drnis].

    Science.gov (United States)

    Mikulandra, O; Cala, D; Marković, V; Zorić, A

    1993-12-01

    In the summer of 1984 workers in the "INA-OKI Drnisplast" factory frequently complained about headaches, weight loss and irregular menstrual cycles. According to the factory engineers that might have been due to an altered composition of the paints and glues that were used in the manufacturing process that year. Those had been found to lack specifications of chemical composition. Experts from the Institute for the Safety at Work from Zagreb were called in to perform measurements of organic solvents content in the workroom air. Benzene concentrations were found to be up to five times higher than the maximum permissible levels, those of toluene up to three times and of cyclohexane up to ten times higher. The polluted part of the factory was closed down, changes were introduced into the working process (use of paints was stopped, only glues without benzene content were allowed and proper ventilation was installed) and all the workers, twenty in all, received medical treatment. After three months the working process was resumed. In 1989 all the twenty workers underwent a control medical examination. All showed signs of recovery, both objective and subjective. Their blood tests values were within normal range. All the workers continued working, save one who retired in 1988 upon recommendation of a disability commission. The cause of disablement was occupational disease--benzene poisoning. On the basis of this experience emphasis is placed on the importance, in working with benzene, of complying with the Legislation on working capacity assessment for jobs requiring special working conditions and with the Safety at work act.

  14. ANALYSIS OF INA-CBG’S FARE AND GOVERNOR REGULATION FAREON SURGERY AT INPATIENT ROOM OF UNDATA REGIONAL PUBLIC HOSPITAL IN PALU

    Directory of Open Access Journals (Sweden)

    Muh. Ryman Napirah

    2016-03-01

    Full Text Available Aim: In order to determine the fares of surgery, there are two types of fares used by hospitals namely Indonesian Case Based Groups fare (INA-CBG s and Governor Regulation fare. This study aimed to identify and analyze both types of fares in orthopedic surgery, general, eyes, midwifery, mouth, ENT, urology at inpatient room of Undata Regional Public Hospital in Palu during year 2014. Method: This was a quantitative study with descriptive approach with 46 cases as the number of surgery. Data were collected through observation and analysis of secondary data were gotten from medical record, pharmaceutical installation of IBS/IDR, inpatient therapy room (Matahari, Aster, and Teratai pavilions and cashier of inpatient room in form of cost details and patient data from January to December 2014. Data Presentation was formed on tables, where the existing fares are grouped based on the component of each cost then summed and calculated the deviation between the two types of fares. Results: This study indicated that orthopedic surgery with deviation of Rp 11.311.365, general surgery with deviation of Rp 6.438.409, eyes surgery with deviation of Rp 45.173.741, midwifery surgery with deviation of Rp 6.645.765, oral surgery with deviation of Rp 6.105.659, and urological surgery with deviation of Rp. 3.809.959. Conclusion: It can be concluded that INA-CBG's fares are higher than Governor Regulation fares except orthopedic surgery, where the Governor Regulation faresare higher than INA-CBG’s fares.

  15. Atomic Ferris wheel beams

    Science.gov (United States)

    Lembessis, Vasileios E.

    2017-07-01

    We study the generation of atom vortex beams in the case where a Bose-Einstein condensate, released from a trap and moving in free space, is diffracted from a properly tailored light mask with a spiral transverse profile. We show how such a diffraction scheme could lead to the production of an atomic Ferris wheel beam.

  16. Atomic Energy Control Board

    International Nuclear Information System (INIS)

    Blackman, N.S.; Gummer, W.K.

    1982-02-01

    This paper has been prepared to provide an overview of the responsibilities and activities of the Atomic Energy Control Board. It is designed to address questions that are often asked concerning the establishment of the Atomic Energy Control Board, its enabling legislation, licensing and compliance activities, federal-provincial relationships, international obligations, and communications with the public

  17. Beyond the Atom

    Science.gov (United States)

    Cox, John

    2011-08-01

    1. Introduction - the atom in the seventies; 2. The vacuum tube; 3. The new rays; 4. The new substances; 5. Disintegration; 6. A family tree; 7. Verifications and results; 8. The objective reality of molecules; 9. The new atom; Bibliography; Index.

  18. Atoms, Molecules, and Compounds

    CERN Document Server

    Manning, Phillip

    2007-01-01

    Explores the atoms that govern chemical processes. This book shows how the interactions between simple substances such as salt and water are crucial to life on Earth and how those interactions are predestined by the atoms that make up the molecules.

  19. Atoms, Molecules and Radiation

    Indian Academy of Sciences (India)

    IAS Admin

    A Refresher Course in Applications of Quantum Mechanics to 'Atoms, Molecules and Radiation' will be held at the Indian Academy of Sciences, Bangalore from December 8 to 20. 2014. The Course is primarily aimed at teachers teaching quantum mechanics and/ or atomic and molecular physics at the UG / PG level.

  20. When Atoms Want

    Science.gov (United States)

    Talanquer, Vicente

    2013-01-01

    Chemistry students and teachers often explain the chemical reactivity of atoms, molecules, and chemical substances in terms of purposes or needs (e.g., atoms want or need to gain, lose, or share electrons in order to become more stable). These teleological explanations seem to have pedagogical value as they help students understand and use…

  1. Zeeman atomic absorption spectroscopy

    International Nuclear Information System (INIS)

    Loos-Vollebregt, M.T.C. de.

    1980-01-01

    A new method of background correction in atomic absorption spectroscopy has recently been introduced, based on the Zeeman splitting of spectral lines in a magnetic field. A theoretical analysis of the background correction capability observed in such instruments is presented. A Zeeman atomic absorption spectrometer utilizing a 50 Hz sine wave modulated magnetic field is described. (Auth.)

  2. Sociální služby a jejich dostupnost v Kraji Vysočina

    OpenAIRE

    Cihlářová, Petra

    2014-01-01

    The aim of this diploma thesis is the mapping and analyzing of the availability of social services in the Vysočina region. Closer attention is given to the district of Havlíčkův Brod focusing on the evaluation of the scope, structure and availability of social services in this region. First the thesis presents the theoretical bases of the social system, in particular the historical development of the welfare state and its typology. After that follows a research focused on the comparison of th...

  3. Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

    DEFF Research Database (Denmark)

    Chen, Miaoxiang Max; Kobashi, Kazufumi

    2012-01-01

    Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist...... of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting...

  4. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    International Nuclear Information System (INIS)

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-01-01

    Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. ISSN 2053-1591 R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠk(CZ) LO1603 Institutional support: RVO:68378271 Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.068, year: 2016

  6. Engaging the Terminal: Promoting Halogen Bonding Interactions with Uranyl Oxo Atoms.

    Science.gov (United States)

    Carter, Korey P; Kalaj, Mark; Surbella, Robert G; Ducati, Lucas C; Autschbach, Jochen; Cahill, Christopher L

    2017-11-02

    Engaging the nominally terminal oxo atoms of the linear uranyl (UO 2 2+ ) cation in non-covalent interactions represents both a significant challenge and opportunity within the field of actinide hybrid materials. An approach has been developed for promoting oxo atom participation in a range of non-covalent interactions, through judicious choice of electron donating equatorial ligands and appropriately polarizable halogen-donor atoms. As such, a family of uranyl hybrid materials was generated based on a combination of 2,5-dihalobenzoic acid and aromatic, chelating N-donor ligands. Delineation of criteria for oxo participation in halogen bonding interactions has been achieved by preparing materials containing 2,5-dichloro- (25diClBA) and 2,5-dibromobenzoic acid (25diBrBA) coupled with 2,2'-bipyridine (bipy) (1 and 2), 1,10-phenanthroline (phen) (3-5), 2,2':6',2''-terpyridine (terpy) (6-8), or 4'-chloro-2,2':6',2''-terpyridine (Cl-terpy) (9-10), which have been characterized through single crystal X-ray diffraction, Raman, Infrared (IR), and luminescence spectroscopy, as well as through density functional calculations of electrostatic potentials. Looking comprehensively, these results are compared with recently published analogues featuring 2,5-diiodobenzoic acid which indicate that although inclusion of a capping ligand in the uranyl first coordination sphere is important, it is the polarizability of the selected halogen atom that ultimately drives halogen bonding interactions with the uranyl oxo atoms. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Theoretical atomic physics

    CERN Document Server

    Friedrich, Harald

    2017-01-01

    This expanded and updated well-established textbook contains an advanced presentation of quantum mechanics adapted to the requirements of modern atomic physics. It includes topics of current interest such as semiclassical theory, chaos, atom optics and Bose-Einstein condensation in atomic gases. In order to facilitate the consolidation of the material covered, various problems are included, together with complete solutions. The emphasis on theory enables the reader to appreciate the fundamental assumptions underlying standard theoretical constructs and to embark on independent research projects. The fourth edition of Theoretical Atomic Physics contains an updated treatment of the sections involving scattering theory and near-threshold phenomena manifest in the behaviour of cold atoms (and molecules). Special attention is given to the quantization of weakly bound states just below the continuum threshold and to low-energy scattering and quantum reflection just above. Particular emphasis is laid on the fundamen...

  8. Atomic diffusion in stars

    CERN Document Server

    Michaud, Georges; Richer, Jacques

    2015-01-01

    This book gives an overview of atomic diffusion, a fundamental physical process, as applied to all types of stars, from the main sequence to neutron stars. The superficial abundances of stars as well as their evolution can be significantly affected. The authors show where atomic diffusion plays an essential role and how it can be implemented in modelling.  In Part I, the authors describe the tools that are required to include atomic diffusion in models of stellar interiors and atmospheres. An important role is played by the gradient of partial radiative pressure, or radiative acceleration, which is usually neglected in stellar evolution. In Part II, the authors systematically review the contribution of atomic diffusion to each evolutionary step. The dominant effects of atomic diffusion are accompanied by more subtle effects on a large number of structural properties throughout evolution. One of the goals of this book is to provide the means for the astrophysicist or graduate student to evaluate the importanc...

  9. Antiprotonic-hydrogen atoms

    International Nuclear Information System (INIS)

    Batty, C.J.

    1989-07-01

    Experimental studies of antiprotonic-hydrogen atoms have recently made great progress following the commissioning of the low energy antiproton facility (LEAR) at CERN in 1983. At the same time our understanding of the atomic cascade has increased considerably through measurements of the X-ray spectra. The life history of the p-bar-p atom is considered in some detail, from the initial capture of the antiproton when stopping in hydrogen, through the atomic cascade with the emission of X-rays, to the final antiproton annihilation and production of mesons. The experiments carried out at LEAR are described and the results compared with atomic cascade calculations and predictions of strong interaction effects. (author)

  10. MORPHOMETRIC PARAMETERS OF CRANIAL AND POSTCRANIAL SKELETON IN CAVE BEAR (Ursus spelaeus Rosenmüller & Heinroth, 1794 FROM LUKINA PEĆINA CAVE AND MEGARA IN BOSNIA AND HERZEGOVINA

    Directory of Open Access Journals (Sweden)

    Lada Lukić-Bilela

    2013-10-01

    Full Text Available During the investigation of the Lukina pećina cave (Srednja stijena, Ravan mountain the bone remains of the cave bear (Ursus spelaeus Rosenmüller & Heinroth, 1794 were found. We demonstrate for the first time the morphometric proportions of the cave bear from this locality. Our reasearch also included the new findings from the Megara cave (Bjelašnica. Analyzed morphometric proportions completely fell within the variation range of the Pleistocene cave bear population in Bosnia and Herzegovina, and the general variation range.Key words: Ursus spelaeus, Lukina pećina Cave, Megara, mandible, postcranial skeleton

  11. Experimental atomic physics

    International Nuclear Information System (INIS)

    Anon.

    1985-01-01

    The experimental atomic physics program within the physics division is carried out by two groups, whose reports are given in this section. Work of the accelerator atomic physics group is centered around the 6.5-MV EN tandem accelerator; consequently, most of its research is concerned with atomic processes occurring to, or initiated by, few MeV/amu heavy ions. Other activities of this group include higher energy experiments at the Holifield Heavy Ion Research Facility (HHIRF), studies of electron and positron channeling radiation, and collaborative experiments at other institutions. The second experimental group concerns itself with lower energy atomic collision physics in support of the Fusion Energy Program. During the past year, the new Electron Cyclotron Resonance Source has been completed and some of the first data from this facility is presented. In addition to these two activities in experimental atomic physics, other chapters of this report describe progress in theoretical atomic physics, experimental plasma diagnostic development, and atomic data center compilation activities

  12. Atomic Structure Theory Lectures on Atomic Physics

    CERN Document Server

    Johnson, Walter R

    2007-01-01

    Atomic Structure Theory is a textbook for students with a background in quantum mechanics. The text is designed to give hands-on experience with atomic structure calculations. Material covered includes angular momentum methods, the central field Schrödinger and Dirac equations, Hartree-Fock and Dirac-Hartree-Fock equations, multiplet structure, hyperfine structure, the isotope shift, dipole and multipole transitions, basic many-body perturbation theory, configuration interaction, and correlation corrections to matrix elements. Numerical methods for solving the Schrödinger and Dirac eigenvalue problems and the (Dirac)-Hartree-Fock equations are given as well. B-spline basis sets are used to carry out sums arising in higher-order many-body calculations. Illustrative problems are provided, together with solutions. FORTRAN programs implementing the numerical methods in the text are included.

  13. Division of atomic physics

    International Nuclear Information System (INIS)

    Kroell, S.

    1994-01-01

    The Division of Atomic Physics, Lund Institute of Technology (LTH), is responsible for the basic physics teaching in all subjects at LTH and for specialized teaching in Optics, Atomic Physics, Atomic and Molecular Spectroscopy and Laser Physics. The Division has research activities in basic and applied optical spectroscopy, to a large extent based on lasers. It is also part of the Physics Department, Lund University, where it forms one of eight divisions. Since the beginning of 1980 the research activities of our division have been centred around the use of lasers. The activities during the period 1991-1992 is described in this progress reports

  14. Atomic mass spectrometry

    International Nuclear Information System (INIS)

    Sanz-Medel, A.

    1997-01-01

    The elemental inorganic analysis seems to be dominated today by techniques based on atomic spectrometry. After an evaluation of advantages and limitations of using mass analysers (ion detectors) versus conventional photomultipliers (photon detector) a brief review of the more popular techniques of the emerging Atomic Mass spectrometry is carried out. Their huge potential for inorganic trace analysis is such that in the future we could well witness how this end of the century and millennium marked the fall of the photons empire in Analytical Atomic Spectrometry. (Author)

  15. Atom trap trace analysis

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Z.-T.; Bailey, K.; Chen, C.-Y.; Du, X.; Li, Y.-M.; O' Connor, T. P.; Young, L.

    2000-05-25

    A new method of ultrasensitive trace-isotope analysis has been developed based upon the technique of laser manipulation of neutral atoms. It has been used to count individual {sup 85}Kr and {sup 81}Kr atoms present in a natural krypton sample with isotopic abundances in the range of 10{sup {minus}11} and 10{sup {minus}13}, respectively. The atom counts are free of contamination from other isotopes, elements,or molecules. The method is applicable to other trace-isotopes that can be efficiently captured with a magneto-optical trap, and has a broad range of potential applications.

  16. Physics of the atom

    CERN Document Server

    Wehr, Russell M; Adair, Thomas W

    1984-01-01

    The fourth edition of Physics of the Atom is designed to meet the modern need for a better understanding of the atomic age. It is an introduction suitable for students with a background in university physics and mathematical competence at the level of calculus. This book is designed to be an extension of the introductory university physics course into the realm of atomic physics. It should give students a proficiency in this field comparable to their proficiency in mechanics, heat, sound, light, and electricity.

  17. Section of Atomic Collisions

    International Nuclear Information System (INIS)

    Berenyi, D.; Biri, S.; Gulyas, L.; Juhasz, Z.; Kover, A.; Orban, A.; Palinkas, J.; Papp, T.; Racz, R.; Ricz, S.

    2009-01-01

    The Section of Atomic Collisions is a research unit with extended activity in the field of atomic and molecular physics. Starting from the study of atomic processes at the beamlines of nuclear physics accelerators in the seventies, our research community became one of the centers of fundamental research in Atomki. We also have a strong connection to materials sciences especially along the line of electron and ion spectroscopy methods. Our present activity covers a wide range of topics from atomic collision mechanisms of fundamental interest, to the complex interactions of electrons, ions, photons and antiparticles with atoms, molecules, surfaces, and specific nanostructures. In the last few years, an increasing fraction of our present topics has become relevant for applications, e.g., molecular collision studies for the radiation therapy methods of tumors, or ion-nanostructure interactions for the future construction of small ion-focusing elements. Our section belongs to the Division of Atomic Physics. The other unit of the Division is the Section of Electron Spectroscopy and Materials Sciences. There are traditionally good connections and a strong collaboration between the groups of the two sections in many fields. From the very beginning of our research work in atomic collisions, external collaborations were of vital importance for us. We regularly organize international workshops in the field of fast ion-atom collisions and related small conferences in Debrecen from 1981. Recently, we organized the Conference on Radiation Damage in Biomolecular Systems (RADAM 2008, Debrecen), and coorganized the Conference on Elementary Processes in Atomic Systems (CEPAS 2008, Cluj). We have access to several large scale facilities in Europe within the framework of formal and informal collaborations. The next themes are in this article: Forward electron emission from energetic atomic collisions; Positron-atom collisions; Photon-atom interactions; Interference effects in electron

  18. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Yang, Tao

    2017-06-01

    We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.

  19. Interfacial stress field generate by a biperiodic hexagonal network of misfit dislocations in a thin bicristal InAs/(111GaAs

    Directory of Open Access Journals (Sweden)

    Outtas, T.

    2004-04-01

    Full Text Available The elastic interactions generated by the presence of a biperiodic network, more precisely hexagonal, of misfit dislocations in the interfacing of a thin bicristal have been simulated numerically while considering an anisotropic elasticity for each crystal. The representation of the normal equi-stress near the dislocation segments and near of the triple node of hexagonal cell permits to detect the stress concentration zone du to elastic field for InAs/(111GaAs system, because, in the category of semiconductors, this is an ideal system which exhibit the presence of edge dislocations type parallels to the free surfaces by S.T.M.[1].

    Las interacciones elásticas generadas por la presencia de una red biperiódica, de dislocaciones en la interfase de un bicristal han sido simuladas numéricamente, considerando elasticidad anisotropa para cada cristal. La representación de las tensiones próximas a las dislocaciones y del nodo triple de la celda hexagonal, permite detectar la zona de concentración de tensiones debido al campo elástico para el sistema InAS/(111 GaAS, ya que, en los semiconductores, éste es un sistema ideal que muestra la presencia de dislocaciones paralelas a las superficies libres por S.T.M.[1].

  20. Application of emitter-sample hybrid terahertz time-domain spectroscopy to investigate temperature-dependent optical constants of doped InAs.

    Science.gov (United States)

    Han, J W; Kim, M S; Song, M S; Kang, B Y; Cho, B K; Lee, J S

    2017-03-20

    We investigate temperature-dependent carrier dynamics of InAs crystal by using reflection-type terahertz time-domain spectroscopy, particularly with a recently developed emitter-sample hybrid structure. We successfully obtain the optical conductivity in a terahertz frequency of bulk InAs whose dc conductivity is in the range of 100-150  Ω-1 cm-1. We find that both real and imaginary parts of the optical conductivity can be fit well with the simple Drude model, and the free-carrier density and the scattering rate obtained from the fit are in good agreement with corresponding values obtained by using other techniques, such as the Hall measurement and the dc-resistivity measurement. These results clearly demonstrate that the proposed technique of adopting the emitter-sample hybrid structure can be exploited to determine temperature-dependent optical constants in a reflection geometry and hence to investigate electrodynamics of bulk metallic systems.

  1. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  2. Determination of the burn-up in fuels of the MTR type by means of gamma spectroscopy with crystal of INa(Tl)

    International Nuclear Information System (INIS)

    Kestelman, A.J.

    1988-01-01

    One of the responsibilities of the Laboratory of Analysis by Neutronic Activation of the RA-6 reactor is to determine the burn-up in fuels of the MTR type. In order to gain experience, up to the arrival of the hyperpure Germanium detector (HPGe) to be used in normal operation, preliminary measurements with a crystal of INa(Tl) were made. The fuel elements used are originated in the RA-3 reactor, with a decay superior to the thirteen years. For this reason, the unique visible photoelectric peak is the one of Cs-137, owing to the low resolution of the INa(Tl). After preliminary measurements, the profiles of burn-up, rectified by attenuation, were measured. Once the efficiency of the detector was determined, the calculation of the burn-up was made; for the element No. 144, a value of 21.6 ± 2.9 g was obtained to be compared with the value 21.9 g which was the evaluation made by the operators. (Author) [es

  3. Ankyrin-G participates in INa remodeling in myocytes from the border zones of infarcted canine heart.

    Directory of Open Access Journals (Sweden)

    Wen Dun

    Full Text Available Cardiac Na channel remodeling provides a critical substrate for generation of reentrant arrhythmias in border zones of the infarcted canine heart. Recent studies show that Nav1.5 assembly and function are linked to ankyrin-G, gap, and mechanical junction proteins. In this study our objective is to expound the status of the cardiac Na channel, its interacting protein ankyrinG and the mechanical and gap junction proteins at two different times post infarction when arrhythmias are known to occur; that is, 48 hr and 5 day post coronary occlusion. Previous studies have shown the origins of arrhythmic events come from the subendocardial Purkinje and epicardial border zone. Our Purkinje cell (Pcell voltage clamp study shows that INa and its kinetic parameters do not differ between Pcells from the subendocardium of the 48hr infarcted heart (IZPCs and control non-infarcted Pcells (NZPCs. Immunostaining studies revealed that disturbances of Nav1.5 protein location with ankyrin-G are modest in 48 hr IZPCs. Therefore, Na current remodeling does not contribute to the abnormal conduction in the subendocardial border zone 48 hr post myocardial infarction as previously defined. In addition, immunohistochemical data show that Cx40/Cx43 co-localize at the intercalated disc (IDs of control NZPCs but separate in IZPCs. At the same time, Purkinje cell desmoplakin and desmoglein2 immunostaining become diffuse while plakophilin2 and plakoglobin increase in abundance at IDs. In the epicardial border zone 5 days post myocardial infarction, immunoblot and immunocytochemical analyses showed that ankyrin-G protein expression is increased and re-localized to submembrane cell regions at a time when Nav1.5 function is decreased. Thus, Nav1.5 and ankyrin-G remodeling occur later after myocardial infarction compared to that of gap and mechanical junctional proteins. Gap and mechanical junctional proteins remodel in IZPCs early, perhaps to help maintain Nav1.5 subcellular

  4. Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen.

    Science.gov (United States)

    Webb, James L; Knutsson, Johan; Hjort, Martin; Gorji Ghalamestani, Sepideh; Dick, Kimberly A; Timm, Rainer; Mikkelsen, Anders

    2015-08-12

    We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 ± 20 °C under an H2 pressure 2 × 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through theoretical simulation to the contact-nanowire junction and nanowire surface Fermi level pinning. Our study demonstrates the significant potential of atomic hydrogen cleaning regarding device fabrication when high quality contacts or complete control of the surface structure is required. As hydrogen cleaning has recently been shown to work for many different types of III-V nanowires, our findings should be applicable far beyond the present materials system.

  5. Atomic Energy Authority Bill

    International Nuclear Information System (INIS)

    Gray, J.H.N.; Stoddart, D.L.; Sinclair, R.M.; Ezra, D.

    1985-01-01

    The House, in Committee, discussed the following matters in relation to the Atomic Energy Authority Bill; financing; trading; personnel conditions of employment; public relations; organization; research programmes; fuels; energy sources; information dissemination. (U.K.)

  6. Atomic Interferometry, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Vertical cavity surface emitting lasers (VCSELs) is a new technology which can be used for developing high performance laser components for atom-based sensors...

  7. Atomic bomb cataracts

    International Nuclear Information System (INIS)

    Shiraeda, Kanji

    1992-01-01

    Eye disturbance caused by atomic bomb radiation can be divided into three groups: direct injury immediately after exposure, eye lesions associated with radiation syndrome, and delayed disturbance. The crystalline lens of the eye is the most radiosensitive. Atomic bomb cataract has been investigated in a number of studies. The first section of this chapter discusses radiation cataract in terms of the incidence and characteristics. The second section deals with atomic bomb cataract, which can be diagnosed based on the four criteria: (1) opacity of the crystalline lens, (2) a history of proximal exposure, (3) lack of eye disease complicating cataract, and (4) non-exposure to radiation other than atomic bombing. The prevalence of cataract and severity of opacity are found to correlate with exposure doses and age at the time of exposure. Furthermore, it is found to correlate with distance from the hypocenter, the condition of shielding, epilation, and the presence or absence or degree of radiation syndrome. (N.K.)

  8. Topics in atomic physics

    CERN Document Server

    Burkhardt, Charles E

    2006-01-01

    The study of atomic physics propelled us into the quantum age in the early twentieth century and carried us into the twenty-first century with a wealth of new and, in some cases, unexplained phenomena. Topics in Atomic Physics provides a foundation for students to begin research in modern atomic physics. It can also serve as a reference because it contains material that is not easily located in other sources. A distinguishing feature is the thorough exposition of the quantum mechanical hydrogen atom using both the traditional formulation and an alternative treatment not usually found in textbooks. The alternative treatment exploits the preeminent nature of the pure Coulomb potential and places the Lenz vector operator on an equal footing with other operators corresponding to classically conserved quantities. A number of difficult to find proofs and derivations are included as is development of operator formalism that permits facile solution of the Stark effect in hydrogen. Discussion of the classical hydrogen...

  9. Atoms at work

    International Nuclear Information System (INIS)

    1982-07-01

    This illustrated booklet discusses the following: atoms; fission of uranium; nuclear power plants; reactor types; plutonium (formation, properties, uses); radioactive waste (fuel cycle, reprocessing, waste management); nuclear fusion; fusion reactors; radiation; radioisotopes and their uses. (U.K.)

  10. Advances in atomic spectroscopy

    CERN Document Server

    Sneddon, J

    1998-01-01

    This volume continues the series'' cutting-edge reviews on developments in this field. Since its invention in the 1920s, electrostatic precipitation has been extensively used in industrial hygiene to remove dust and particulate matter from gases before entering the atmosphere. This combination of electrostatic precipitation is reported upon in the first chapter. Following this, chapter two reviews recent advances in the area of chemical modification in electrothermal atomization. Chapter three consists of a review which deal with advances and uses of electrothermal atomization atomic absorption spectrometry. Flow injection atomic spectroscopy has developed rapidly in recent years and after a general introduction, various aspects of this technique are looked at in chapter four. Finally, in chapter five the use of various spectrometric techniques for the determination of mercury are described.

  11. Atomic and Molecular Interactions

    International Nuclear Information System (INIS)

    2002-01-01

    The Gordon Research Conference (GRC) on Atomic and Molecular Interactions was held at Roger Williams University, Bristol, RI. Emphasis was placed on current unpublished research and discussion of the future target areas in this field

  12. The Atomic Energy Control Board

    International Nuclear Information System (INIS)

    Doern, G.B.

    1976-01-01

    This study describes and assesses the regulatory and administrative processes and procedures of the Atomic Energy Control Board, the AECB. The Atomic Energy Control Act authorized the AECB to control atomic energy materials and equipment in the national interest and to participate in measures for the international control of atomic energy. The AECB is authorized to make regulations to control atomic energy materials and equipment and to make grants in support of atomic energy research. (author)

  13. Atoms, molecules & elements

    CERN Document Server

    Graybill, George

    2007-01-01

    Young scientists will be thrilled to explore the invisible world of atoms, molecules and elements. Our resource provides ready-to-use information and activities for remedial students using simplified language and vocabulary. Students will label each part of the atom, learn what compounds are, and explore the patterns in the periodic table of elements to find calcium (Ca), chlorine (Cl), and helium (He) through hands-on activities.

  14. Harnessing the atom

    International Nuclear Information System (INIS)

    1999-01-01

    Splitting the atom has had a major impact on the history of the latter part of the 20th century. This film depicts the many benefits - and also drawbacks - of nuclear technology, and describes how the International Atomic Energy Agency performs its various tasks. It touches on challenges such as the choice between major energy sources, growing concerns about the global climate, and prospects for nuclear arms control and disarmament

  15. Optical atomic magnetometer

    Science.gov (United States)

    Budker, Dmitry; Higbie, James; Corsini, Eric P

    2013-11-19

    An optical atomic magnetometers is provided operating on the principles of nonlinear magneto-optical rotation. An atomic vapor is optically pumped using linearly polarized modulated light. The vapor is then probed using a non-modulated linearly polarized light beam. The resulting modulation in polarization angle of the probe light is detected and used in a feedback loop to induce self-oscillation at the resonant frequency.

  16. Atom probe crystallography

    OpenAIRE

    Gault, Baptiste; Moody, Michael P.; Cairney, Julie M.; Ringer, Simon P.

    2012-01-01

    This review addresses new developments in the emerging area of “atom probe crystallography”, a materials characterization tool with the unique capacity to reveal both composition and crystallographic structure at the atomic scale. This information is crucial for the manipulation of microstructure for the design of both structural and functional materials with optimized mechanical, electric, optoelectronic, magnetic, or superconducting properties that will find application in, for example, nan...

  17. Atomic Energy Act 1946

    International Nuclear Information System (INIS)

    1946-01-01

    This Act provides for the development of atomic energy in the United Kingdom and for its control. It details the duties and powers of the competent Minister, in particular his powers to obtain information on and to inspect materials, plant and processes, to control production and use of atomic energy and publication of information thereon. Also specified is the power to search for and work minerals and to acquire property. (NEA) [fr

  18. Hirshfeld atom refinement.

    Science.gov (United States)

    Capelli, Silvia C; Bürgi, Hans-Beat; Dittrich, Birger; Grabowsky, Simon; Jayatilaka, Dylan

    2014-09-01

    Hirshfeld atom refinement (HAR) is a method which determines structural parameters from single-crystal X-ray diffraction data by using an aspherical atom partitioning of tailor-made ab initio quantum mechanical molecular electron densities without any further approximation. Here the original HAR method is extended by implementing an iterative procedure of successive cycles of electron density calculations, Hirshfeld atom scattering factor calculations and structural least-squares refinements, repeated until convergence. The importance of this iterative procedure is illustrated via the example of crystalline ammonia. The new HAR method is then applied to X-ray diffraction data of the dipeptide Gly-l-Ala measured at 12, 50, 100, 150, 220 and 295 K, using Hartree-Fock and BLYP density functional theory electron densities and three different basis sets. All positions and anisotropic displacement parameters (ADPs) are freely refined without constraints or restraints - even those for hydrogen atoms. The results are systematically compared with those from neutron diffraction experiments at the temperatures 12, 50, 150 and 295 K. Although non-hydrogen-atom ADPs differ by up to three combined standard uncertainties (csu's), all other structural parameters agree within less than 2 csu's. Using our best calculations (BLYP/cc-pVTZ, recommended for organic molecules), the accuracy of determining bond lengths involving hydrogen atoms from HAR is better than 0.009 Å for temperatures of 150 K or below; for hydrogen-atom ADPs it is better than 0.006 Å(2) as judged from the mean absolute X-ray minus neutron differences. These results are among the best ever obtained. Remarkably, the precision of determining bond lengths and ADPs for the hydrogen atoms from the HAR procedure is comparable with that from the neutron measurements - an outcome which is obtained with a routinely achievable resolution of the X-ray data of 0.65 Å.

  19. Atomic phenomena in dense plasmas

    International Nuclear Information System (INIS)

    Weisheit, J.C.

    1981-03-01

    The following chapters are included: (1) the plasma environment, (2) perturbations of atomic structure, (3) perturbations of atomic collisions, (4) formation of spectral lines, and (5) dielectronic recombination

  20. On the bosonic atoms

    Science.gov (United States)

    Amusia, M. Ya.; Chernysheva, L. V.

    2018-01-01

    We investigate ground state properties of atoms, in which substitute fermions - electrons by bosons, namely π --mesons. We perform some calculations in the frame of modified Hartree-Fock (HF) equation. The modification takes into account symmetry, instead of anti-symmetry of the pair identical bosons wave function. The modified HF approach thus enhances (doubles) the effect of self-action for the boson case. Therefore, we accordingly modify the HF equations by eliminating the self-action terms "by hand". The contribution of meson-meson and meson-nucleon non-Coulomb interaction is inessential at least for atoms with low and intermediate nuclear charge, which is our main subject. We found that the binding energy of pion negative ions A π - , pion atoms A π , and the number of extra bound pions ΔN π increases with the growth of nuclear charge Z. For e.g. Xe ΔN π = 4. As an example of a simple process with a pion atom, we consider photoionization that differs essentially from that for electron atoms. Namely, it is not monotonic decreasing from the threshold but has instead a prominent maximum above threshold. We study also elastic scattering of pions by pion atoms.

  1. Atomic bomb and leukemia

    International Nuclear Information System (INIS)

    Ichimaru, M.; Tomonaga, M.; Amenomori, T.; Matsuo, T.

    1991-01-01

    Characteristic features of the leukemia among atomic bomb survivors were studied. Dose estimates of atomic bomb radiation were based on T65D, but the new dosimetry system DS86 was used for some analyses. The ratio of a single leukemia type to all leukemias was highest for chronic myelogenous leukemia (CML) in Hiroshima, and the occurrence of CML was thought to be most characteristic to atomic bomb radiation induced leukemia. The threshold of CML occurrence in Hiroshima is likely to be between 0.5∼0.09 Gy. However, the threshold of acute leukemia appears to be nearly 1 Gy. In the distribution of acute myeloid leukemia (AML) subtypes by French-American-British classification, there was no M3 case in 1 Gy or more group, although several atypical AML cases of survivors were observed. Although aplastic anemia has not increased as a late effect of the atomic bomb radiation exposure, many atypical leukemia or other myeloproliferative diseases who had been diagnosed as aplastic anemia or its related diseases have been experienced among atomic bomb survivors. Chromosome study was conducted using colony forming cells induced by hemopoietic stem cells of peripheral blood of proximal survivors. Same chromosome aberrations were observed in colony forming cells and peripheral T-cells in several atomic bomb survivors. (author)

  2. FAO and atomic energy

    International Nuclear Information System (INIS)

    1960-01-01

    During the past six years FAO has become more engaged in work concerned with atomic energy. In 1957 it established an Atomic Energy Branch. The new forces and new tools which have become available for use in the fight against poverty, disease and malnutrition can be of the greatest assistance in FAO's work in nearly all phases of the production, storage and distribution of food and other agricultural products. The Organization promotes their use to improve the standards of feeding, clothing and housing throughout the world. Another side of work related to atomic energy is concerned with combating contamination from the use of atomic energy for power production and other purposes. This raises considerable problems for food and agriculture, so that FAO also has a responsibility for assisting Governments in safeguarding their food and food-producing resources from contamination. FAO is essentially concerned with fostering wider knowledge of the many contributions that atomic science can make to agriculture, forestry, fisheries and nutrition. It is also concerned in assisting governments to establish sound programmes for applying atomic science in food and agriculture. One way of spreading such knowledge is through the publication of documents and reports

  3. Atomic bomb and leukemia

    Energy Technology Data Exchange (ETDEWEB)

    Ichimaru, M.; Tomonaga, M.; Amenomori, T.; Matsuo, T. (Nagasaki Univ. (Japan). School of Medicine)

    1991-12-01

    Characteristic features of the leukemia among atomic bomb survivors were studied. Dose estimates of atomic bomb radiation were based on T65D, but the new dosimetry system DS86 was used for some analyses. The ratio of a single leukemia type to all leukemias was highest for chronic myelogenous leukemia (CML) in Hiroshima, and the occurrence of CML was thought to be most characteristic to atomic bomb radiation induced leukemia. The threshold of CML occurrence in Hiroshima is likely to be between 0.5{approx}0.09 Gy. However, the threshold of acute leukemia appears to be nearly 1 Gy. In the distribution of acute myeloid leukemia (AML) subtypes by French-American-British classification, there was no M3 case in 1 Gy or more group, although several atypical AML cases of survivors were observed. Although aplastic anemia has not increased as a late effect of the atomic bomb radiation exposure, many atypical leukemia or other myeloproliferative diseases who had been diagnosed as aplastic anemia or its related diseases have been experienced among atomic bomb survivors. Chromosome study was conducted using colony forming cells induced by hemopoietic stem cells of peripheral blood of proximal survivors. Same chromosome aberrations were observed in colony forming cells and peripheral T-cells in several atomic bomb survivors. (author).

  4. Recognizing nitrogen dopant atoms in graphene using atomic force microscopy

    DEFF Research Database (Denmark)

    van der Heijden, Nadine J.; Smith, Daniel; Calogero, Gaetano

    2016-01-01

    as a benchmark, we show that the position of the dopant atoms can be determined using atomic force microscopy. Specifically, the frequency shift-distance curves Delta f(z) acquired above a N atom are significantly different from the curves measured over a C atom. Similar behavior was found for N-doped graphene...

  5. Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

    Energy Technology Data Exchange (ETDEWEB)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

  6. Za přečtení stojí... Kateřina Tučková: Vyhnání Gerty Schnirch. Brno, Host 2009

    Czech Academy of Sciences Publication Activity Database

    Košnarová, Veronika

    2010-01-01

    Roč. 60, č. 5 (2010), s. 237-240 ISSN 0009-0786 Institutional research plan: CEZ:AV0Z90560517 Keywords : Czech literature * Tučková, Kateřina * interpretations Subject RIV: AJ - Letters, Mass-media, Audiovision

  7. Atomic oxygen stimulated outgassing

    Science.gov (United States)

    Linton, Roger C.; Reynolds, John M.

    1991-01-01

    The passive Long Duration Exposure Facility (LDEF) Experiment A0034, Atomic Oxygen Simulated Outgassing, consisted of two identical one-sixth tray modules, exposing selected thermal control coatings to atomic oxygen and the combined space environment on the leading edge and, for reference, to the relative wake environment on the trailing edge. Optical mirrors were included adjacent to the thermal coatings for deposition of outgassing products. Ultraviolet grade windows and metal covers were provided for additional assessment of the effects of the various environmental factors. Preliminary results indicate that orbital atomic oxygen is both a degrading and a optically restorative factor in the thermo-optical properties of selected thermal coatings. There is evidence of more severe optical degradation on collector mirrors adjacent to coatings that were exposed to the RAM-impinging atomic oxygen. This evidence of atomic oxygen stimulated outgassing is discussed in relation to alternative factors that could affect degradation. The general effects of the space environment on the experiment hardware as well as the specimens are discussed.

  8. Compilation of data from hadronic atoms

    International Nuclear Information System (INIS)

    Poth, H.

    1979-01-01

    This compilation is a survey of the existing data of hadronic atoms (pionic-atoms, kaonic-atoms, antiprotonic-atoms, sigmonic-atoms). It collects measurements of the energies, intensities and line width of X-rays from hadronic atoms. Averaged values for each hadronic atom are given and the data are summarized. The listing contains data on 58 pionic-atoms, on 54 kaonic-atoms, on 23 antiprotonic-atoms and on 20 sigmonic-atoms. (orig./HB) [de

  9. Accelerators for atomic energy research

    International Nuclear Information System (INIS)

    Shibata, Tokushi

    1999-01-01

    The research and educational activities accomplished using accelerators for atomic energy research were studied. The studied items are research subjects, facility operation, the number of master theses and doctor theses on atomic energy research using accelerators and the future role of accelerators in atomic energy research. The strategy for promotion of the accelerator facility for atomic energy research is discussed. (author)

  10. Atomic nucleus and elementary particles

    International Nuclear Information System (INIS)

    Zakrzewski, J.

    1976-01-01

    Negatively charged leptons and hadrons can be incorporated into atomic shells forming exotic atoms. Nucleon resonances and Λ hyperons can be considered as constituents of atomic nuclei. Information derived from studies of such exotic systems enriches our knowledge of both the interactions of elementary particles and of the structure of atomic nuclei. (author)

  11. Rydberg atoms in strong fields

    International Nuclear Information System (INIS)

    Kleppner, D.; Tsimmerman, M.

    1985-01-01

    Experimental and theoretical achievements in studying Rydberg atoms in external fields are considered. Only static (or quasistatic) fields and ''one-electron'' atoms, i.e. atoms that are well described by one-electron states, are discussed. Mainly behaviour of alkali metal atoms in electric field is considered. The state of theoretical investigations for hydrogen atom in magnetic field is described, but experimental data for atoms of alkali metals are presented as an illustration. Results of the latest experimental and theoretical investigations into the structure of Rydberg atoms in strong fields are presented

  12. Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Arikan, Bulent, E-mail: bulentarikanx@gmail.com; Korkmaz, Melih; Aslan, Bulent; Serincan, Uğur

    2015-08-31

    In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically altered in each sample by changing the thickness of InAs (GaSb) layers from 9 to 7 monolayers (ML) for a fixed GaSb (InAs) layer at 9 ML (7 ML). The same InSb-like strain compensation interface was used for all samples. High resolution X-ray diffraction analysis, spectral responsivity and external quantum efficiency (QE) measurements were performed to express the effects of layer thickness variations on both structural and photodetector features. The decrease in the InAs thickness resulted in the increased mismatch from 0 to + 1626 ppm and the blue shift in the 50% cut-off wavelength (λ{sub c}) from 5.41 to 4.36 μm at 77 K. The additional decrease in GaSb thickness caused further increase in the mismatch up to + 1791 ppm. The steepness of the photoresponse at the absorption band edge was quantified and presented comparatively with different photodetector parameters and material properties for a complete picture. The highest optical response was obtained from sample having 8 ML InAs and 9 ML GaSb with λ{sub c} = 4.76 μm and QE = 23.7% at 4 μm. - Highlights: • Detailed growth conditions for InAs/GaSb SLs designed for infrared detection • Precisely engineering the λ{sub c} and the ∆a{sub ⊥}/a by controlling the SL layer thicknesses • InAs layer thickness changes are more effective than the GaSb on the λ{sub c} and ∆a{sub ⊥}/a.

  13. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

    2014-07-01

    Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

  14. Sampling the Hydrogen Atom

    Directory of Open Access Journals (Sweden)

    Graves N.

    2013-01-01

    Full Text Available A model is proposed for the hydrogen atom in which the electron is an objectively real particle orbiting at very near to light speed. The model is based on the postulate that certain velocity terms associated with orbiting bodies can be considered as being af- fected by relativity. This leads to a model for the atom in which the stable electron orbits are associated with orbital velocities where Gamma is n /α , leading to the idea that it is Gamma that is quantized and not angular momentum as in the Bohr and other models. The model provides a mechanism which leads to quantization of energy levels within the atom and also provides a simple mechanical explanation for the Fine Struc- ture Constant. The mechanism is closely associated with the Sampling theorem and the related phenomenon of aliasing developed in the mid-20th century by engineers at Bell labs.

  15. US Atomic Energy Law

    International Nuclear Information System (INIS)

    1981-01-01

    This is a new volume follows in the series supplementing the volumes 11 and 12 published in 1965 and 1966, updating the collection of Federal Acts and Executive Orders of the President of the United States of America relating to atomic energy legislation. Since the publication of volumes 11 and 12, the US Atomic Energy Act of 1954 alone has been amended 25 times, mainly as a consequence of by the Nuclear Non-Proliferation Act and the Uranium Mill Tailings Radiation Control Act, both of 1978. The Atomic Energy Act of 1954 is supplemented by a selection of the most important Federal Acts, Executive Orders of the President and Resolutions of the Congress. (orig./HSCH) [de

  16. CP violation in atoms

    International Nuclear Information System (INIS)

    Barr, S.M.

    1992-01-01

    Electric dipole moments of large atoms are an excellent tool to search for CP violation beyond the Standard Model. These tell us about the electron EDM but also about CP-violating electron-nucleon dimension-6 operators that arise from Higgs-exchange. Rapid strides are being made in searches for atomic EDMs. Limits on the electron EDM approaching the values which would be expected from Higgs-exchange mediated CP violation have been achieved. It is pointed out that in this same kind of model if tan β is large the effects in atoms of the dimension-6 e - n operators may outweigh the effect of the electron EDM. (author) 21 refs

  17. Atoms in Slovakia

    International Nuclear Information System (INIS)

    Danis, D.; Feik, K.; Florek, M.; Kmosena, J.; Chrapan, J.; Morovic, M.; Slugen, V.; Seliga, M.; Valovic, J.

    2006-01-01

    In this book the history of development of using of nuclear energy in the Slovak Republic as well as in the Czechoslovakia (before 1993 year) is presented. The aim of the book is to preserve the memory of the period when the creation and development of nuclear physics, technology, nuclear medicine, radioecology and energetics in Slovakia occurred - as witnessed by people who experienced this period and to adapt it to future generations. The Editorial board of the SNUS collected the views of 60 contributors and distinguished workers - Slovakian experts in nuclear science, education and technology. Calling upon a wide spectrum of experts ensured an objective historical description of the period. A huge amount of subjective views on recent decades were collected and supported by a wealth of photographic documentation. This created a synthesised reflection on the history of the 'atoms' in Slovakia. The book contains 15 tables, 192 black and white and 119 colour pictures from around the world and from places involved in the compilation of the study and with the study of atomic science in Slovakia. The main chapters are as follows: Atoms in the world, Atoms in Slovakia, Atoms in the educational system, Atoms in health services (Radiology, Nuclear medicine, Radiation protection, the Cyclotron centre of the Slovak Republic), Radioecology, Other applications of irradiation, Nuclear energetics (Electric energy in the second half of the 20 th century, NPP Bohunice, NPP Mochovce, the back-end of Nuclear energetics, Big names in Nuclear energetics in Slovakia), Chronology and an Appendix entitled 'Slovak companies in nuclear energetics'

  18. Polarized atomic beams for targets

    International Nuclear Information System (INIS)

    Grueebler, W.

    1984-01-01

    The basic principle of the production of polarized atomic hydrogen and deuterium beams are reviewed. The status of the present available polarization, density and intensity are presented. The improvement of atomic beam density by cooling the hydrogen atoms to low velocity is discussed. The possible use of polarized atomic beams as targets in storage rings is shown. It is proposed that polarized atomic beams can be used to produce polarized gas targets with high polarization and greatly improved density

  19. Stationary Electron Atomic Model

    Science.gov (United States)

    Pressler, David E.

    1998-04-01

    I will present a novel theory concerning the position and nature of the electron inside the atom. This new concept is consistant with present experimental evidence and adheres strictly to the valence-shell electron-pair repulsion (VSEPR) model presently used in chemistry for predicting the shapes of molecules and ions. In addition, I will discuss the atomic model concept as being a true harmonic oscillator, periodic motion at resonant frequency which produces radiation at discrete frequencies or line spectra is possible because the electron is under the action of two restoring forces, electrostatic attraction and superconducting respulsion of the electron's magnetic field by the nucleus.

  20. Warm Vapor Atom Interferometer

    Science.gov (United States)

    Biedermann, Grant; Wheeler, David; Jau, Yuan-Yu; McGuinness, Hayden

    2014-05-01

    We present a light pulse atom interferometer using room temperature rubidium vapor. Doppler sensitive stimulated Raman transitions forming the atom optical elements inherently select a cold velocity group for the interferometer. The interferometer is configured to be sensitive to accelerations. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  1. Atomic Force Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Day, R.D.; Russell, P.E.

    1988-12-01

    The Atomic Force Microscope (AFM) is a recently developed instrument that has achieved atomic resolution imaging of both conducting and non- conducting surfaces. Because the AFM is in the early stages of development, and because of the difficulty of building the instrument, it is currently in use in fewer than ten laboratories worldwide. It promises to be a valuable tool for obtaining information about engineering surfaces and aiding the .study of precision fabrication processes. This paper gives an overview of AFM technology and presents plans to build an instrument designed to look at engineering surfaces.

  2. Korean atomic bomb victims.

    Science.gov (United States)

    Sasamoto, Yukuo

    2009-01-01

    After colonizing Korea, Japan invaded China, and subsequently initiated the Pacific War against the United States, Britain, and their allies. Towards the end of the war, U.S. warplanes dropped atomic bombs on Hiroshima and Nagasaki, which resulted in a large number of Koreans who lived in Hiroshima and Nagasaki suffering from the effects of the bombs. The objective of this paper is to examine the history of Korea atomic bomb victims who were caught in between the U.S., Japan, the Republic of Korea (South Korea) and the Democratic People's Republic of Korea (North Korea).

  3. Atomic bomb and leukemia

    Energy Technology Data Exchange (ETDEWEB)

    Ichimaru, Michito; Tomonaga, Masao; Amenomori, Tatsuhiko; Matsuo, Tatsuki (Nagasaki Univ. (Japan). School of Medicine)

    1991-03-01

    Characteristic features of leukemia among atomic bomb survivors were studied. The ratio of a single leukemia type to all leukemias was highest for CML in Hiroshima, and the occurrence of CML was thought to be most characteristic for atomic bomb radiation induced leukemia. In the distribution of AML subtypes of FAB classification, there was no M3 cases in 1 Gy or more group, although several atypical AML cases of survivors were observed. Chromosome study was conducted using colony forming cells induced by hemopoietic stem cells of peripheral blood of proximal survivors. Same chromosome aberrations were observed in colony forming cells and peripheral blood of proximal survivors. (author).

  4. Atoms in Agriculture

    Energy Technology Data Exchange (ETDEWEB)

    Osborne, Thomas S. [University of Tennessee

    1965-01-01

    Agriculture benefits from the applications of research. Radioactive techniques have been used to study soils, plants, microbes, insects, farm animals, and new ways to use and preserve foodstuffs. Radioactive atoms are not used directly by farmers but are used in research directed by the U. S. Department of Agriculture and Atomic Energy Commission, by the agricultural experiment stations of the various states, and by numerous public and private research institutions. From such research come improved materials and methods which are used on the farm.

  5. Optically pumped atoms

    CERN Document Server

    Happer, William; Walker, Thad

    2010-01-01

    Covering the most important knowledge on optical pumping of atoms, this ready reference is backed by numerous examples of modelling computation for optical pumped systems. The authors show for the first time that modern scientific computing software makes it practical to analyze the full, multilevel system of optically pumped atoms. To make the discussion less abstract, the authors have illustrated key points with sections of MATLAB codes. To make most effective use of contemporary mathematical software, it is especially useful to analyze optical pumping situations in the Liouville spa

  6. Atomic compressibility and reversible insertion of atoms into solids

    International Nuclear Information System (INIS)

    Connerade, J.P.; Semaoune, R.

    2000-01-01

    We developed a theoretical model to investigate the compressibility of atoms. Atoms are confined inside a spherical cavity, simulated numerically by a finite repulsive potential barrier. The energy levels and wavefunctions of confined atoms are determined by solving, for different cavity radii, the relativistic Dirac-Fock equations, including formally the repulsive barrier. The changes in the atomic size and in the ground-state energy level allow one to define a positive isotropic pressure exerted on the confined atom. The model is applied to atomic caesium and it is demonstrated quantitatively that the remarkable compressibility of caesium originates from a purely atomic mechanism, namely the pressure-induced collapse of the 5d orbital. We propose that this mechanism can also drive, at an atomic level, a reversible insertion of atoms into solids. Applications to lithium-ion batteries are briefly discussed at the end of this paper. (author)

  7. Spatially resolved photoionization of ultracold atoms on an atom chip

    International Nuclear Information System (INIS)

    Kraft, S.; Guenther, A.; Fortagh, J.; Zimmermann, C.

    2007-01-01

    We report on photoionization of ultracold magnetically trapped Rb atoms on an atom chip. The atoms are trapped at 5 μK in a strongly anisotropic trap. Through a hole in the chip with a diameter of 150 μm, two laser beams are focused onto a fraction of the atomic cloud. A first laser beam with a wavelength of 778 nm excites the atoms via a two-photon transition to the 5D level. With a fiber laser at 1080 nm the excited atoms are photoionized. Ionization leads to depletion of the atomic density distribution observed by absorption imaging. The resonant ionization spectrum is reported. The setup used in this experiment is suitable not only to investigate mixtures of Bose-Einstein condensates and ions but also for single-atom detection on an atom chip

  8. Atomic collisions related to atomic laser isotope separation

    International Nuclear Information System (INIS)

    Shibata, Takemasa

    1995-01-01

    Atomic collisions are important in various places in atomic vapor laser isotope separation (AVLIS). At a vaporization zone, many atomic collisions due to high density have influence on the atomic beam characteristics such as velocity distribution and metastable states' populations at a separation zone. In the separation zone, a symmetric charge transfer between the produced ions and the neutral atoms may degrade selectivity. We have measured atomic excitation temperatures of atomic beams and symmetric charge transfer cross sections for gadolinium and neodymium. Gadolinium and neodymium are both lanthanides. Nevertheless, results for gadolinium and neodymium are very different. The gadolinium atom has one 5d electron and neodymium atom has no 5d electron. It is considered that the differences are due to existence of 5d electron. (author)

  9. Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Komarov, F.; Vlasukova, L.; Greben, M.; Milchanin, O. [Belarusian State University, Independence Ave. 4, 220030 Minsk (Belarus); Zuk, J., E-mail: jotzet@hektor.umcs.lublin.pl [Maria Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland); Wesch, W.; Wendler, E. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Togambaeva, A. [Al-Farabi Kazakh National University, 71 Al-Farabi Ave., 050040 Almaty (Kazakhstan)

    2013-07-15

    We have studied the formation of InSb and InAs precipitates with sizes of several nanometers in Si and SiO{sub 2}/Si by means of implantation of (Sb + In) or (As + In) ions with energies from 170 to 350 keV and fluencies from 2.8 to 3.5 × 10{sup 16} cm{sup −2} at 500 °C and subsequent annealing at 1050–1100 °C for 3–30 min. RBS, TEM/TED, RS and PL techniques were employed to characterize the implanted layers. A broad band in the region of 1.2–1.6 μm has been registered in the low-temperature PL spectra of both (Sb + In) and (As + In) implanted and annealed silicon crystals. It was shown that structural and optical properties of oxidized silicon crystals strongly depend on type of implanted species in silicon crystals.

  10. Surface Brillouin scattering measurement of the elastic constants of single crystal InAs0.91Sb0.09

    International Nuclear Information System (INIS)

    Kotane, L M; Comins, J D; Every, A G; Botha, J R

    2011-01-01

    Surface Brillouin scattering of light has been used to measure the angular dependence of the Rayleigh surface acoustic wave (SAW), pseudo surface acoustic wave (PSAW) and longitudinal lateral wave (LLW) speeds in a (100)-oriented single crystal of the ternary semiconductor alloy InAs 0.91 Sb 0.09 . The wave speed measurements have been used to determine the room temperature values of the elastic constants C 11 , C 12 and C 44 of the alloy. A simple and robust fitting procedure has been implemented for recovering the elastic constants, in which the merit function is constructed from explicit secular functions that determine the surface and lateral wave speeds in the [001] and [011] crystallographic directions. In the fitting, relatively larger weighting factors have been assigned to the SAW and PSAW data because of the greater precision with which the surface modes can be measured as compared with the lateral wave.

  11. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  12. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

    Science.gov (United States)

    Chen, Ze-Sheng; Ma, Ben; Shang, Xiang-Jun; He, Yu; Zhang, Li-Chun; Ni, Hai-Qiao; Wang, Jin-Liang; Niu, Zhi-Chuan

    2016-12-01

    Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g (2)(0) < 0.5 which demonstrates a pure single-photon emission.

  13. Atomic Physics 16: Sixteenth International Conference on Atomic Physics. Proceedings

    International Nuclear Information System (INIS)

    Baylis, W.E.; Drake, G.W.

    1999-01-01

    These proceedings represent papers presented at the 16th International Conference on Atomic Physics held in Windsor, Ontario, Canada, in August, 1998. The topics discussed included a wide array of subjects in atomic physics such as atom holography, alignment in atomic collisions, coulomb-interacting particles, muon experiments, x-rays from comets, atomic electron collisions in intense laser fields, spectroscopy of trapped ions, and Bose-Einstein condensates. This conference represents the single most important meeting world wide on fundamental advances in atomic physics. There were 30 papers presented at the conference,out of which 4 have been abstracted for the Energy, Science and Technology database

  14. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad

    2014-07-01

    Density functional theory (DFT) was used to elucidate the mechanism of n-butane hydrogenolysis (into propane, ethane, and methane) on well-defined zirconium hydrides supported on SBA15 coordinated to the surface via N-donor surface pincer ligands: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage. The dihydride A linked via a chelating [N,O] surface ligand was found to be more active than B, linked to the chelating [N,N] surface ligand. Moreover, the dihydride zirconium complexes are also more active than their corresponding monohydrides C-F. The C-C cleavage step occurs preferentially via β-alkyl transfer, which is the rate-limiting step in the alkane hydrogenolysis. The energetics of the comparative pathways over the potential energy surface diagram (PES) reveals the hydrogenolysis of n-butane into propane and ethane. © 2014 American Chemical Society.

  15. Atomic spectrum of neptunium

    International Nuclear Information System (INIS)

    Fred, M.; Tomkins, F.S.; Blaise, J.E.; Camus, P.; Verges, J.

    1976-05-01

    A description and interpretation of the atomic spectrum of neptunium are given. Wavelengths were measured for 6096 spectrum lines in the range 3793 to 38,812 cm -1 (26,353 to 2575 A), of which 2526 were classified as transitions between 329 odd levels and 130 even levels of neutral neptunium (Np I). The data are presented in five tables

  16. Atoms in Astronomy.

    Science.gov (United States)

    Blanchard, Paul A.

    This booklet is part of an American Astronomical Society curriculum project designed to provide teaching materials to teachers of secondary school chemistry, physics, and earth science. A Basic Topics section discusses atomic structure, emphasizing states of matter at high temperature and spectroscopic analysis of light from the stars. A section…

  17. FAC: Flexible Atomic Code

    Science.gov (United States)

    Gu, Ming Feng

    2018-02-01

    FAC calculates various atomic radiative and collisional processes, including radiative transition rates, collisional excitation and ionization by electron impact, energy levels, photoionization, and autoionization, and their inverse processes radiative recombination and dielectronic capture. The package also includes a collisional radiative model to construct synthetic spectra for plasmas under different physical conditions.

  18. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  19. Atomic transport properties

    International Nuclear Information System (INIS)

    Freyss, M.

    2015-01-01

    As presented in the first chapter of this book, atomic transport properties govern a large panel of nuclear fuel properties, from its microstructure after fabrication to its behaviour under irradiation: grain growth, oxidation, fission product release, gas bubble nucleation. The modelling of the atomic transport properties is therefore the key to understanding and predicting the material behaviour under irradiation or in storage conditions. In particular, it is noteworthy that many modelling techniques within the so-called multi-scale modelling scheme of materials make use of atomic transport data as input parameters: activation energies of diffusion, diffusion coefficients, diffusion mechanisms, all of which are then required to be known accurately. Modelling approaches that are readily used or which could be used to determine atomic transport properties of nuclear materials are reviewed here. They comprise, on the one hand, static atomistic calculations, in which the migration mechanism is fixed and the corresponding migration energy barrier is calculated, and, on the other hand, molecular dynamics calculations and kinetic Monte-Carlo simulations, for which the time evolution of the system is explicitly calculated. (author)

  20. The atomic society

    International Nuclear Information System (INIS)

    Hallerbach, J.; Hinz, M.O.; Huebner, H.; Huelsmann, H.; Krusewitz, K.; Mechels, E.; Moneta, J.; Mossmann, W.; Reuleaux, F.

    1978-01-01

    Nuclear power and social progress. Analyses and alternative. Organisation and development of the electric power industry. Conflicts in trade unions and churches. Processes of learning in court and in the science business. Materials, data, and figures on the development of power machinery and international atomic policy. Songs of the anti-nuclear movement. (orig.) [de

  1. Observational Evidence for Atoms.

    Science.gov (United States)

    Jones, Edwin R., Jr.; Childers, Richard L.

    1984-01-01

    Discusses the development of the concept of atomicity and some of the many which can be used to establish its validity. Chemical evidence, evidence from crystals, Faraday's law of electrolysis, and Avogadro's number are among the areas which show how the concept originally developed from a purely philosophical idea. (JN)

  2. Spectra of alkali atoms

    International Nuclear Information System (INIS)

    Santoso, Budi; Arumbinang, Haryono.

    1981-01-01

    Emission spectra of alkali atoms has been determined by using spectrometer at the ultraviolet to infra red waves range. The spectra emission can be obtained by absorption spectrophotometric analysis. Comparative evaluations between experimental data and data handbook obtained by spark method were also presented. (author tr.)

  3. Experimental atomic physics

    International Nuclear Information System (INIS)

    Sellin, I.A.; Elston, S.B.; Forester, J.P.; Liao, K.H.; Pegg, D.J.; Peterson, R.S.; Thoe, R.S.; Hayden, H.C.; Griffin, P.M.

    1976-01-01

    The atomic structure and collision phenomena of highly stripped ions in the range Z = 6 to 35 were studied. Charge-transfer and multiple-electron-loss cross sections were determined. Absolute x-ray-production cross sections for incident heavy ions were measured. 10 figures, 1 table

  4. Atomic Particle Detection

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Hal

    1970-01-01

    This booklet tells how scientists observe the particles and electromagnetic radiation that emerges from an atomic nucleus. The equipment used falls into two general categories: counters which count each particle as it passes by, and track detectors, which make a photographic record of the particle's track.

  5. Role of atoms in atomic gravitational-wave detectors

    Science.gov (United States)

    Norcia, Matthew A.; Cline, Julia R. K.; Thompson, James K.

    2017-10-01

    Recently, it has been proposed that space-based atomic sensors may be used to detect gravitational waves. These proposals describe the sensors either as clocks or as atom interferometers. Here, we seek to explore the fundamental similarities and differences between the two types of proposals. We present a framework in which the fundamental mechanism for sensitivity is identical for clock and atom interferometer proposals, with the key difference being whether or not the atoms are tightly confined by an external potential. With this interpretation in mind, we propose two major enhancements to detectors using confined atoms, which allow for an enhanced sensitivity analogous to large momentum transfer used in atom interferometry (though with no transfer of momentum to the atoms), and a way to extend the useful coherence time of the sensor beyond the atom's excited-state lifetime.

  6. Ionization of highly excited atoms by atomic particle impact

    International Nuclear Information System (INIS)

    Smirnov, B.M.

    1976-01-01

    The ionization of a highly excited atom by a collision with an atom or molecule is considered. The theory of these processes is presented and compared with experimental data. Cross sections and ionization potential are discussed. 23 refs

  7. Absorption imaging of ultracold atoms on atom chips

    DEFF Research Database (Denmark)

    Smith, David A.; Aigner, Simon; Hofferberth, Sebastian

    2011-01-01

    Imaging ultracold atomic gases close to surfaces is an important tool for the detailed analysis of experiments carried out using atom chips. We describe the critical factors that need be considered, especially when the imaging beam is purposely reflected from the surface. In particular we present...... methods to measure the atom-surface distance, which is a prerequisite for magnetic field imaging and studies of atom surface-interactions....

  8. Angular momentum coupling in atom-atom collisions

    International Nuclear Information System (INIS)

    Grosser, J.

    1986-01-01

    The coupling between the electronic angular momentum and the rotating atom-atom axis in the initial or the final phase of an atom-atom collision is discussed, making use of the concepts of radial and rotational (Coriolis) coupling between different molecular states. The description is based on a limited number of well-understood approximations, and it allows an illustrative geometric representation of the transition from the body fixed to the space fixed motion of the electrons. (orig.)

  9. Atomic Absorption, Atomic Fluorescence, and Flame Emission Spectrometry.

    Science.gov (United States)

    Horlick, Gary

    1984-01-01

    This review is presented in six sections. Sections focus on literature related to: (1) developments in instrumentation, measurement techniques, and procedures; (2) performance studies of flames and electrothermal atomizers; (3) applications of atomic absorption spectrometry; (4) analytical comparisons; (5) atomic fluorescence spectrometry; and (6)…

  10. Atomic Act amended

    International Nuclear Information System (INIS)

    Drabova, D.

    2002-01-01

    In the paper by the chairwoman of the Czech nuclear regulatory authority, the history of Czech nuclear legislation is outlined, the reasons for the amendment of the Atomic Act (Act No. 18/1997) are explained, and the amendments themselves are highlighted. The Act No. 13/2002 of 18 December 2001 is reproduced from the official Collection of Acts of the Czech Republic in the facsimile form. The following acts were thereby amended: Atomic Act No. 18/1997, Metrology Act No. 505/1990, Public Health Protection Act No. 258/2000, and Act No. 2/1969 on the Establishment of Ministries and Other Governmental Agencies of the Czech Republic. (P.A.)

  11. Atomic assistance in 1961

    International Nuclear Information System (INIS)

    1961-01-01

    More than 100 experts provided by the International Atomic Energy Agency will be working in different parts of the world this year, assisting the Agency's Member States in building up their national programs of peaceful atomic development. The total allocation of EPTA funds to the Agency for the two-year period 1961-62 is $1 393 600 (of which approximately half is available in 1961), and is meant not only for the provision of experts and equipment but also for training fellowships and regional projects. The countries which will receive Agency assistance in the form of experts and equipment this year are: Afghanistan, Argentina, Austria, Brazil, Burma, Ceylon, Chile, the Republic of China, Denmark, Greece, Guatemala, Iceland, Indonesia, Iran, Iraq, Israel, Japan, the Republic of Korea, the Republic of Mali, Mexico, Morocco, Pakistan, the Philippines, Senegal, the Sudan, Thailand, Tunisia, Turkey, the United Arab Republic, Vietnam and Yugoslavia

  12. Atomicity for XML Databases

    Science.gov (United States)

    Biswas, Debmalya; Jiwane, Ashwin; Genest, Blaise

    With more and more data stored into XML databases, there is a need to provide the same level of failure resilience and robustness that users have come to expect from relational database systems. In this work, we discuss strategies to provide the transactional aspect of atomicity to XML databases. The main contribution of this paper is to propose a novel approach for performing updates-in-place on XML databases, with the undo statements stored in the same high level language as the update statements. Finally, we give experimental results to study the performance/storage trade-off of the updates-in-place strategy (based on our undo proposal) against the deferred updates strategy to providing atomicity.

  13. Elementary relativistic atoms

    International Nuclear Information System (INIS)

    Nemenov, L.

    2001-01-01

    The Coulomb interaction which occurs in the final state between two particles with opposite charges allows for creation of the bound state of these particles. In the case when particles are generated with large momentum in lab frame, the Lorentz factors of the bound state will also be much larger than one. The relativistic velocity of the atoms provides the opportunity to observe bound states of (π + μ - ), (π + π - ) and (π + K - ) with a lifetime as short as 10 -16 s, and to measure their parameters. The ultrarelativistic positronium atoms (A 2e ) allow us to observe the e.ect of superpenetration in matter, to study the effects caused by the formation time of A 2e from virtual e + e - pairs and to investigate the process of transformation of two virtual particles into the bound state

  14. Atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Haswell, S.J.

    1991-01-01

    Atomic absorption spectroscopy is now well established and widely used technique for the determination of trace and major elements in a wide range analyte types. There have been many advances in the atomic spectroscopy over the last decade and for this reason and to meet the demand, it was felt that there was a need for an updated book. Whilst interest in instrumental design has tended to dominate the minds of the spectrocopist, the analyst concerned with obtaining reliable and representative data, in diverse areas of application, has been diligently modifying and developing sample treatment and instrumental introduction techniques. Such methodology is de fundamental part of analysis and form the basis of the fourteen application chapters of this book. The text focuses in the main on AAS; however, the sample handling techniques described are in many cases equally applicable to ICP-OES and ICP-MS analysis. (author). refs.; figs.; tabs

  15. Lithium cyanide supported by O- and N-donors

    Energy Technology Data Exchange (ETDEWEB)

    Budanow, Alexandra; Franz, Klaus-Dieter; Vitze, Hannes; Fink, Lothar; Alig, Edith; Bolte, Michael; Wagner, Matthias; Lerner, Hans-Wolfram [Institut fuer Anorganische Chemie, Goethe-Universitaet Frankfurt, Max-von-Laue-Str. 7, 60438, Frankfurt (Germany)

    2017-02-15

    A series of adducts of LiCN, namely [Li(Me{sub 2}CO{sub 3})CN], [Li(Et{sub 2}CO{sub 3})CN], and [Li(NMP)CN] (NMP = N-methyl-2-pyrrolidone) were prepared by treatment of solvent-free LiCN with the appropriate donor. The starting material for these approaches, donor-free LiCN, was quantitatively prepared from Me{sub 3}SiCN and Li[Me] in diethyl ether at 0 C. Alternatively, [Li(NMP)CN] was synthesized by metathesis reaction of LiCl with NaCN in the presence of stoichiometric amounts of NMP. Although [Li(Me{sub 2}CO{sub 3})CN] and [Li(Et{sub 2}CO{sub 3})CN] are water-sensitive compounds and decompose at the exposure to air, [Li(NMP)CN] is stable in air, even at elevated temperatures. The thermal stability of [Li(NMP)CN] was proven by differential thermal analysis (DTA). [Li(NMP)CN] shows thermal stability up to temperatures of about 132 C. To evaluate the cyanation ability the reactions of 1-bromooctane and 3-bromocyclohexene with unsupported LiCN, [Li(NMP)CN], and a mixture of NaCN/LiCl/NMP were investigated. We found that [Li(NMP)CN] as well as LiCl/NaCN/NMP are efficient cyanation reagents comparable to the expensive and air-sensitive, donor-free LiCN. A product of the chloride-cyanide-bromide exchange could be isolated and structurally characterized by X-ray diffraction. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Atomic emission spectroscopy

    Science.gov (United States)

    Andrew, K. H.

    1975-01-01

    The relationship between the Slater-Condon theory and the conditions within the atom as revealed by experimental data was investigated. The first spectrum of Si, Rb, Cl, Br, I, Ne, Ar, and Xe-136 and the second spectrum of As, Cu, and P were determined. Methods for assessing the phase stability of fringe counting interferometers and the design of an autoranging scanning system for digitizing the output of an infrared spectrometer and recording it on magnetic tape are described.

  17. Glossary of atomic terms

    International Nuclear Information System (INIS)

    1980-01-01

    This glossary (of about 400 terms) has been compiled to help people outside the atomic energy industry to understand what those inside it are saying. It is not intended to be a definitive dictionary of scientific or technical terms, nor does it aim to cover terms that are in general use in science and technology. A list of some initials and acronyms is appended. (author)

  18. Glossary of atomic terms

    International Nuclear Information System (INIS)

    1982-04-01

    This glossary, containing almost 400 terms, has been compiled to help people outside the atomic energy industry to understand what those inside it are saying. It is not intended to be a definitive dictionary of scientific or technical terms, nor does it aim to cover terms that are in general use in science and technology. A list of about 100 initials and acronyms will be found at the end. (author)

  19. Atomic and molecular theory

    International Nuclear Information System (INIS)

    Inokuti, Mitio.

    1990-01-01

    The multifaceted role of theoretical physics in understanding the earliest stages of radiation action is discussed. Scientific topics chosen for the present discourse include photoabsorption, electron collisions, and ionic collisions, and electron transport theory, Connections of atomic and molecular physics with condensed-matter physics are also discussed. The present article includes some historical perspective and an outlook for the future. 114 refs., 3 figs

  20. Atomic physics issues in fusion

    International Nuclear Information System (INIS)

    Post, D.E.

    1982-01-01

    Atomic physics issues have played a large role in controlled fusion research. A general introduction to the present role of atomic processes in both inertial and magnetic controlled fusion work is presented. (Auth.)

  1. Real and Hybrid Atomic Orbitals.

    Science.gov (United States)

    Cook, D. B.; Fowler, P. W.

    1981-01-01

    Demonstrates that the Schrodinger equation for the hydrogenlike atom separates in both spheroconal and prolate spheroidal coordinates and that these separations provide a sound theoretical basis for the real and hybrid atomic orbitals. (Author/SK)

  2. Electromagnetic trapping of cold atoms

    International Nuclear Information System (INIS)

    Balykin, V.I.; Minogin, V.G.; Letokhov, V.S.

    2000-01-01

    This review describes the methods of trapping cold atoms in electromagnetic fields and in the combined electromagnetic and gravity fields. We discuss first the basic types of the dipole radiation forces used for cooling and trapping atoms in the laser fields. We outline next the fundamentals of the laser cooling of atoms and classify the temperature limits for basic laser cooling processes. The main body of the review is devoted to discussion of atom traps based on the dipole radiation forces, dipole magnetic forces, combined dipole radiation-magnetic forces, and the forces combined of the dipole radiation-magnetic and gravity forces. Physical fundamentals of atom traps operating as waveguides and cavities for cold atoms are also considered. The review ends with the applications of cold and trapped atoms in atomic, molecular and optical physics. (author)

  3. Physics of atoms and molecules

    International Nuclear Information System (INIS)

    Bransden, B.H.; Joachain, C.J.

    1983-01-01

    This book presents a unified account of the physics of atoms and molecules at a level suitable for second- and third-year undergraduate students of physics and physical chemistry. Following a brief historical introduction to the subject the authors outline the ideas and approximation methods of quantum mechanics to be used later in the book. Six chapters look at the structure of atoms and the interactions between atoms and electromagnetic radiation. The authors then move on to describe the structure of molecules and molecular spectra. Three chapters deal with atomic collisions, the scattering of electrons by atoms and the scattering of atoms by atoms. The concluding chapter considers a few of the many important applications of atomic physics within astrophysics, laser technology, and nuclear fusion. Problems are given at the end of each chapter, with hints at the solutions in an appendix. Other appendices include various special topics and derivations together with useful tables of units. (author)

  4. Atomic inner-shell physics

    International Nuclear Information System (INIS)

    Crasemann, B.

    1985-01-01

    This book discusses: relativistic and quantum electrodynamic effects on atomic inner shells; relativistic calculation of atomic transition probabilities; many-body effects in energetic atomic transitions; Auger Electron spectrometry of core levels of atoms; experimental evaluation of inner-vacancy level energies for comparison with theory; mechanisms for energy shifts of atomic K-X rays; atomic physics research with synchrotron radiation; investigations of inner-shell states by the electron energy-loss technique at high resolution; coherence effects in electron emission by atoms; inelastic X-ray scattering including resonance phenomena; Rayleigh scattering: elastic photon scattering by bound electrons; electron-atom bremsstrahlung; X-ray and bremsstrahlung production in nuclear reactions; positron production in heavy-ion collisions, and X-ray processes in heavy-ion collisions

  5. Evaporative cooling of trapped atoms

    International Nuclear Information System (INIS)

    Ketterle, W.; Van Druten, N.J.

    1996-01-01

    This report discusses the following topics on evaporative cooling of trapped atoms: Theoretical models for evaporative cooling; the role of collisions for real atoms; experimental techniques and summary of evaporative cooling experiments. 166 refs., 6 figs., 3 tabs

  6. Into the atom and beyond

    CERN Multimedia

    1989-01-01

    Magnifying an atom to football pitch size. The dense nucleus, carrying almost all the atomic mass, is much smaller than the ball. The players (the electrons) would see something about the size of a marble!

  7. A new atomic model

    International Nuclear Information System (INIS)

    Petrescu, Florian Ion

    2012-01-01

    The movement of an electron around the atomic nucleus has today a great importance in many engineering fields. Electronics, aeronautics, micro and nanotechnology, electrical engineering, optics, lasers, nuclear power, computing, equipment and automation, telecommunications, genetic engineering, bioengineering, special processing, modern welding, robotics, energy and electromagnetic wave field is today only a few of the many applications of electronic engineering. This book presents, shortly, a new and original relation (20 and 20') who determines the radius with that, the electron is running around the nucleus of an atom. One utilizes, two times the Lorenz relation, the Niels Bohr generalized equation, and a mass relation, which was deduced from the kinematics energy relation written in two modes: classical and Coulombian. Equalizing the mass relation with Lorenz relation one obtains a form which is a relation between the squared electron speed (v 2 ) and the radius (r). The second relation between v 2 and r was obtained by equalizing the mass of Bohr equation and the mass of Lorenz relation. For a Bohr energetically level (n=a constant value), one determines now two energetically below levels, which form an electronic layer. The author realizes by this a new atomic model, or a new quantum theory, which explains the existence of electron-clouds without spin.Writing the kinematics energy relation in two modes, classical and Coulombian one determines a relation, from which explicitely the mass of the electron is determined.

  8. Australia's atomic conspiracy theory

    International Nuclear Information System (INIS)

    Binnie, A.

    2001-01-01

    The author questions claims by the Newcastle University historian Wayne Reynolds in his book 'Australia's Bid for the Bomb', that the impetus behind the Snowy Mountains Scheme was to provide a secure source of power for the enrichment of uranium and production of heavy water so that Australia could produce its own atomic bombs. Reynolds also argued that the Australian Atomic Energy Commission (AAEC) was set up so that Australia had a trained scientific workforce to produce plutonium for the bomb. While the book is well researched, Reynolds does not seem to understand the principles of basic science and engineering. After the Second World War, a manufacturing and industrial base with a skilled and trained workforce was needed so it could be converted to war or defence manufacturing when the need arose. This new manufacturing community would require electrical power to sustain it. Hydroelectricity and atomic energy could help provide these needs. Even though war was still raging, Prime Minister John Curtin looked ahead and set up a Department of Post-War Reconstruction. It was through this department that the Snowy Mountains Scheme would be established. Curtin did not live to see this. He died in 1945 but his successor, Ben Chifley, continued the vision. The author believes, an understanding of the science behind these developments and an appreciation of how how humans interact with each others when it comes to getting something they want is likely to give a more balanced view of the past

  9. Relativistic correlations in atoms

    International Nuclear Information System (INIS)

    Dietz, K.

    1987-01-01

    Atoms are particularly well-suited objects when it comes to testing certain concepts of many-body theories. They play a unique role in this respect because of two constructively interfering reasons: first of all, the laws describing the interactions of their constituents are the ones best known in all of Physics; secondly, their structure is comparatively simple and amenable to concise theoretical treatment. Because of these two reasons, physically motivated many-body approximation schemes, ordered in a systematic hierarchy of precision, can be carefully tested; discrepancies between theory and experiment are due to many-body effects and are never masked by uncertainties in the constituent-interaction (needless to say, the very small hadronic contributions to atomic structure is left out. Many-body effects in atoms are solely produced by the electron-electron interaction which derives from the laws of Quantum Electrodynamics or, in a very good approximation from the repulsive Coulomb potential; in the general nomenclature they are named correlations. The material is organized in two chapters: chapter 1 deals with a general introduction and discussion of g-Hartree mean-field theories, chapter 2 deals with applications. The role of vacuum fluctuations and deformations of the Dirac sea in a consistent construction of mean-fields is emphasized and their explicit form in the g-Hartree theory is given. 21 references, 5 figures, 3 tables

  10. New sources of cold atoms for atomic clocks

    International Nuclear Information System (INIS)

    Aucouturier, E.

    1997-01-01

    The purpose of this doctoral work is the realisation of new sources of cold cesium atoms that could be useful for the conception of a compact and high-performance atomic clock. It is based on experiences of atomic physics using light induced atomic manipulation. We present here the experiences of radiative cooling of atoms that have been realised at the Laboratoire de l'Horloge Atomique from 1993 to 1996. Firstly, we applied the techniques of radiative cooling and trapping of atoms in order to create a three-dimensional magneto-optical trap. For this first experience, we developed high quality laser sources, that were used for other experiments. We imagined a new configuration of trapping (two-dimensional magneto-optical trap) that was the basis for a cold atom source. This design gives the atoms a possibility to escape towards one particular direction. Then, we have extracted the atoms from this anisotropic trap in order to create a continuous beam of cold atoms. We have applied three methods of extraction. Firstly, the launching of atoms was performed by reducing the intensity of one of the cooling laser beams in the desired launching direction. Secondly, a frequency detuning between the two laser laser beams produced the launching of atoms by a so-called 'moving molasses'. The third method consisted in applying a static magnetic field that induced the launching of atoms in the direction of this magnetic field. At the same time, another research on cold atoms was initiated at the I.H.A. It consisted in cooling a large volume of atoms from a cell, using an isotropic light. This offers an interesting alternative to the traditional optical molasses. (author)

  11. Self-lacing atomic chains

    NARCIS (Netherlands)

    Zandvliet, Henricus J.W.; van Houselt, Arie; Poelsema, Bene

    2009-01-01

    The structural and electronic properties of self-lacing atomic chains on Pt modified Ge(001) surfaces have been studied using low-temperature scanning tunnelling microscopy and spectroscopy. The self-lacing chains have a cross section of only one atom, are perfectly straight, thousands of atoms long

  12. Atomic Energy Commission Act, 1963

    International Nuclear Information System (INIS)

    1963-01-01

    Promulgated in 1963, the Atomic Energy Commission Act (204) established and vested in the Ghana Atomic Energy Commission the sole responsibility for all matters relating to the peaceful uses of atomic energy in the country. Embodied in the Act are provisions relating to the powers, duties, rights and liabilities of the Commission. (EAA)

  13. Current Trends in Atomic Spectroscopy.

    Science.gov (United States)

    Wynne, James J.

    1983-01-01

    Atomic spectroscopy is the study of atoms/ions through their interaction with electromagnetic radiation, in particular, interactions in which radiation is absorbed or emitted with an internal rearrangement of the atom's electrons. Discusses nature of this field, its status and future, and how it is applied to other areas of physics. (JN)

  14. Breaking the atom with Samson

    NARCIS (Netherlands)

    Väänänen, J.; Coecke, B.; Ong, L.; Panangaden, P.

    2013-01-01

    The dependence atom =(x,y) was introduced in [11]. Here x and y are finite sets of attributes (or variables) and the intuitive meaning of =(x,y) is that the attributes x completely (functionally) determine the attributes y. One may wonder, whether the dependence atom is truly an atom or whether it

  15. Polarizational radiation or 'atomic' bremsstrahlung

    International Nuclear Information System (INIS)

    Ya Amusia, M.

    1992-01-01

    It is demonstrated that a new kind of continuum spectrum radiation exists, where the mechanism of formation is quite different from that of ordinary bremsstrahlung. The latter originates due to slowing down of the charged projectile in the target field, while the former, called polarization radiation or 'atomic' bremsstrahlung, is a result of radiation either of the target or the projectile particles dipolarly polarized during the collision process. Not only general formulae, but also results of concrete calculations are presented. These demonstrate, that for electron-atom collisions the atomic contribution to the total bremsstrahlung spectrum becomes dominant for photon energies near and above the atomic ionization potential. As to atom-atom or ion-atom collisions, the bremsstrahlung spectrum is completely determined by the atomic contribution. The specific features of the case when the incoming particles are relativistic are discussed at length. A number of examples of colliding pairs are considered, for which the atomic bremsstrahlung process is quite essential: A bare nucleus and an atom, pair of atoms, at least one of which is excited, electron, or atom interacting with a molecule. The same mechanism is essential also in formation of radiation in nuclear and elementary particle collisions. (orig.)

  16. On correspondence between atomic volume and atomic radius in metals

    International Nuclear Information System (INIS)

    Malyuchkov, O.T.

    1980-01-01

    Atomic radii for 68 metals and their allotropic modifications are calculated according to proposed carlier technique for recalculation of real structure to structures with coordination number 12. The comparison of obtained values with published data confirms the supposition on proportionality of the dependence between atomic volume and atomic radius. Atomic number is more sensitive to structural transformations than atomic radius and it can better characterize a tendency in electronic structure modification of a substance during phase transistions. Taking into considerations that in different structure modifications both the value of atomic volume and the correlation between the volume of ''rigid ball'' and peripherical part of atomic volume change, these changes can be used for qualitative assesment of a number of parameters of electronic structure of metals, alloys and compounds [ru

  17. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  18. Two New Three-Dimensional Pillared-Layer Co(II and Cu(II Frameworks Involving a [M2(EO-N32] Motif from a Semi-Flexible N-Donor Ligand, 5,5′-Bipyrimidin: Syntheses, Structures and Magnetic Properties

    Directory of Open Access Journals (Sweden)

    Zu-Zhen Zhang

    2018-02-01

    Full Text Available Two new three-dimensional (3D Co(II- and Cu(II-azido frameworks, [Co2(N34(bpym2]n (1 and [Cu2(N34(bpym]n (2, were successfully synthesized by introducing a semi-flexible N-donor ligand, 5,5′-bipyrimidin (bpym, with different bridging modes and orientations. Compounds 1 and 2 were structurally characterized by X-ray crystallography, IR spectroscopy, thermogravimetry and elemental analysis. Compounds 1 and 2 are 3D pillared-layer frameworks with double end-on (EO azido bridged dinuclear motifs, [M2(EO-N32]. In Compound 1, the bpym ligands show trans μ2-bridging mode and the role as pillars to connect the Co(II-azido layers, composed of [Co2(EO-N32] motifs and single end-to-end (EE azido bridges, to a 3D network with BN topology. In contrast, in 2, the bpym ligand adopts a twisted μ4-bridging mode, which not only connects the adjacent [Cu2(EO-N32] units to a layer, but also functions as a pillar for the layers of the 3D structure. The structural diversities between the two types of architectures can be attributed to the coordination geometry preference of the metal ions (octahedral for Co2+ and square pyramidal for Cu2+. Magnetic investigations revealed that Compound 1 exhibits ferromagnetic-like magnetic ordering due to spin canting with a critical temperature, TC = 33.0 K, and furthers the field-induced magnetic transitions of metamagnetism at temperatures below TC. Compound 2 shows an antiferromagnetic ordering with TN = 3.05 K and a field-induced magnetic transition of spin-flop at temperatures below the TN.

  19. Topics in atomic collision theory

    CERN Document Server

    Geltman, Sydney; Brueckner, Keith A

    1969-01-01

    Topics in Atomic Collision Theory originated in a course of graduate lectures given at the University of Colorado and at University College in London. It is recommended for students in physics and related fields who are interested in the application of quantum scattering theory to low-energy atomic collision phenomena. No attention is given to the electromagnetic, nuclear, or elementary particle domains. The book is organized into three parts: static field scattering, electron-atom collisions, and atom-atom collisions. These are in the order of increasing physical complexity and hence necessar

  20. Cold atoms: optical gratings and atomic clocks; Atomes froids: reseaux optiques et horloges

    Energy Technology Data Exchange (ETDEWEB)

    Leduc, M. [Lab. Kastler Brossel, Ecole Normale Superieure, 75 - Paris (France); Lemonde, P. [Syrte, Observatoire de Paris, 75 - Paris (France)

    2010-10-15

    The domain of cold atoms is flourishing. The light-matter interaction allows a gas to be cooled below 10{sup -6} K and to be trapped in vacuum. Atoms lasers are based on Bose-Einstein condensates. Trapped in optical gratings by stationary waves, ultra-cold fermionic atoms can be considered as models for the understanding of condensed matter physics

  1. Superconducting microtraps for ultracold atoms

    International Nuclear Information System (INIS)

    Hufnagel, C.

    2011-01-01

    Atom chips are integrated devices in which atoms and atomic clouds are stored and manipulated in miniaturized magnetic traps. State of the art fabrication technologies allow for a flexible design of the trapping potentials and consequently provide extraordinary control over atomic samples, which leads to a promising role of atom chips in the engineering and investigation of quantum mechanical systems. Naturally, for quantum mechanical applications, the atomic coherence has to be preserved. Using room temperature circuits, the coherence time of atoms close to the surface was found to be drastically limited by thermal current fluctuations in the conductors. Superconductors offer an elegant way to circumvent thermal noise and therefore present a promising option for the coherent manipulation of atomic quantum states. In this thesis trapping and manipulation of ultracold Rubidium atoms in superconducting microtraps is demonstrated. In this connection the unique properties of superconductors are used to build traps based on persistent currents, the Meissner effect and remanent magnetization. In experiment it is shown, that in superconducting atom chips, thermal magnetic field noise is significantly reduced. Furthermore it is demonstrated, that atomic samples can be employed to probe the properties of superconducting materials. (author) [de

  2. Cavity QED with atomic mirrors

    Science.gov (United States)

    Chang, D. E.; Jiang, L.; Gorshkov, A. V.; Kimble, H. J.

    2012-06-01

    A promising approach to merge atomic systems with scalable photonics has emerged recently, which consists of trapping cold atoms near tapered nanofibers. Here, we describe a novel technique to achieve strong, coherent coupling between a single atom and photon in such a system. Our approach makes use of collective enhancement effects, which allow a lattice of atoms to form a high-finesse cavity within the fiber. We show that a specially designated ‘impurity’ atom within the cavity can experience strongly enhanced interactions with single photons in the fiber. Under realistic conditions, a ‘strong coupling’ regime can be reached, wherein it becomes feasible to observe vacuum Rabi oscillations between the excited impurity atom and a single cavity quantum. This technique can form the basis for a scalable quantum information network using atom-nanofiber systems.

  3. Synchrotron radiation in atomic physics

    International Nuclear Information System (INIS)

    Crasemann, B.

    1998-01-01

    Much of present understanding of atomic and molecular structure and dynamics was gained through studies of photon-atom interactions. In particular, observations of the emission, absorption, and scattering of X rays have complemented particle-collision experiments in elucidating the physics of atomic inner shells. Grounded on Max von Laue's theoretical insight and the invention of the Bragg spectrometer, the field's potential underwent a step function with the development of synchrotron-radiation sources. Notably current third-generation sources have opened new horizons in atomic and molecular physics by producing radiation of wide tunability and exceedingly high intensity and polarization, narrow energy bandwidth, and sharp time structure. In this review, recent advances in synchrotron-radiation studies in atomic and molecular science are outlined. Some tempting opportunities are surveyed that arise for future studies of atomic processes, including many-body effects, aspects of fundamental photon-atom interactions, and relativistic and quantum-electrodynamic phenomena. (author)

  4. Heat transport through atomic contacts.

    Science.gov (United States)

    Mosso, Nico; Drechsler, Ute; Menges, Fabian; Nirmalraj, Peter; Karg, Siegfried; Riel, Heike; Gotsmann, Bernd

    2017-05-01

    Heat transport and dissipation at the nanoscale severely limit the scaling of high-performance electronic devices and circuits. Metallic atomic junctions serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects that occur in one-dimensional (1D) systems. Whereas charge transport in atomic junctions has been studied intensively in the past two decades, heat transport remains poorly characterized because it requires the combination of a high sensitivity to small heat fluxes and the formation of stable atomic contacts. Here we report heat-transfer measurements through atomic junctions and analyse the thermal conductance of single-atom gold contacts at room temperature. Simultaneous measurements of charge and heat transport reveal the proportionality of electrical and thermal conductance, quantized with the respective conductance quanta. This constitutes a verification of the Wiedemann-Franz law at the atomic scale.

  5. Offshore atomic power plants

    International Nuclear Information System (INIS)

    Anon.

    1975-01-01

    Various merits of offshore atomic power plants are illustrated, and their systems are assessed. The planning of the offshore atomic power plants in USA is reviewed, and the construction costs of the offshore plant in Japan were estimated. Air pollution problem may be solved by the offshore atomic power plants remarkably. Deep water at low temperature may be advantageously used as cooling water for condensers. Marine resources may be bred by building artificial habitats and by providing spring-up equipments. In the case of floating plants, the plant design can be standardized so that the construction costs may be reduced. The offshore plants can be classified into three systems, namely artificial island system, floating system and sea bottom-based system. The island system may be realized with the present level of civil engineering, but requires the development of technology for the resistance of base against earthquake and its calculation means. The floating system may be constructed with conventional power plant engineering and shipbuilding engineering, but the aseismatic stability of breakwater may be a problem to be solved. Deep water floating system and deep water submerging system are conceivable, but its realization may be difficult. The sea bottom-based system with large caissons can be realized by the present civil engineering, but the construction of the caissons, stability against earthquake and resistance to waves may be problems to be solved. The technical prediction and assessment of new plant sites for nuclear power plants have been reported by Science and Technology Agency in 1974. The construction costs of an offshore plant has been estimated by the Ministry of International Trade and Industry to be yen71,026/kW as of 1985. (Iwakiri, K.)

  6. Boron atom reactions

    International Nuclear Information System (INIS)

    Estes, R.; Tabacco, M.B.; Digiuseppe, T.G.; Davidovits, P.

    1982-01-01

    The reaction rates of atomic boron with various epoxides have been measured in a flow tube apparatus. The bimolecular rate constants, in units of cm 3 molecule -1 s -1 , are: 1,2-epoxypropane (8.6 x 10 -11 ), 1,2-epoxybutane (8.8 x 10 -11 ), 1,2,3,4-diepoxybutane (5.5 x 10 -11 ), 1-chloro-2,3-epoxypropane (5.7 x 10 -11 ), and 1,2-epoxy-3,3,3-trichloropropane (1.5 x 10 -11 ). (orig.)

  7. Atom and Society

    International Nuclear Information System (INIS)

    1997-01-01

    The object of this colloquium is a thought about the means, for a democracy to adapt the process of decisions and the methods of communication with public opinion in order that the profits derived from atom go on to be larger than the risks. The questions of low doses, the nuclear safety, the underground laboratories for radioactive wastes, are studied in relation with public opinion, the question itself of public opinion is studied, the history of nuclear energy in France through the weapons and the nuclear power plants is evoked and gives an explanation of the situation of nuclear controversy. (N.C.)

  8. Atomic data for fusion

    International Nuclear Information System (INIS)

    Hunter, H.T.; Kirkpatrick, M.I.; Alvarez, I.; Cisneros, C.; Phaneuf, R.A.; Barnett, C.F.

    1990-07-01

    This report provides a handbook of recommended cross-section and rate-coefficient data for inelastic collisions between hydrogen, helium and lithium atoms, molecules and ions, and encompasses more than 400 different reactions of primary interest in fusion research. Published experimental and theoretical data have been collected and evaluated, and the recommended data are presented in tabular, graphical and parametrized form. Processes include excitation and spectral line emission, charge exchange, ionization, stripping, dissociation and particle interchange reactions. The range of collision energies is appropriate to applications in fusion-energy research

  9. Atomic mechanics of solids

    CERN Document Server

    MacPherson, A K

    1990-01-01

    This volume brings together some of the presently available theoretical techniques which will be useful in the design of solid-state materials. At present, it is impossible to specify the atomic composition of a material and its macroscopic physical properties. However, the future possibilities for such a science are being laid today. This is coming about due to the development of fast, cheap computers which will be able to undertake the calculations which are necessary.Since this field of science is fairly new, it is not yet quite clear which direction of analysis will eventually prov

  10. Chameleon Induced Atomic Afterglow

    CERN Document Server

    Brax, Philippe

    2010-01-01

    The chameleon is a scalar field whose mass depends on the density of its environment. Chameleons are necessarily coupled to matter particles and will excite transitions between atomic energy levels in an analogous manner to photons. When created inside an optical cavity by passing a laser beam through a constant magnetic field, chameleons are trapped between the cavity walls and form a standing wave. This effect will lead to an afterglow phenomenon even when the laser beam and the magnetic field have been turned off, and could be used to probe the interactions of the chameleon field with matter.

  11. Chameleon induced atomic afterglow

    International Nuclear Information System (INIS)

    Brax, Philippe

    2010-09-01

    The chameleon is a scalar field whose mass depends on the density of its environment. Chameleons are necessarily coupled to matter particles and will excite transitions between atomic energy levels in an analogous manner to photons. When created inside an optical cavity by passing a laser beam through a constant magnetic field, chameleons are trapped between the cavity walls and form a standing wave. This effect will lead to an afterglow phenomenon even when the laser beam and the magnetic field have been turned off, and could be used to probe the interactions of the chameleon field with matter. (orig.)

  12. Chameleon induced atomic afterglow

    International Nuclear Information System (INIS)

    Brax, Philippe; Burrage, Clare

    2010-01-01

    The chameleon is a scalar field whose mass depends on the density of its environment. Chameleons are necessarily coupled to matter particles and will excite transitions between atomic energy levels in an analogous manner to photons. When created inside an optical cavity by passing a laser beam through a constant magnetic field, chameleons are trapped between the cavity walls and form a standing wave. This effect will lead to an afterglow phenomenon even when the laser beam and the magnetic field have been turned off, and could be used to probe the interactions of the chameleon field with matter.

  13. Electroless atomic layer deposition

    Science.gov (United States)

    Robinson, David Bruce; Cappillino, Patrick J.; Sheridan, Leah B.; Stickney, John L.; Benson, David M.

    2017-10-31

    A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

  14. Atomic data for fusion

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, H.T.; Kirkpatrick, M.I.; Alvarez, I.; Cisneros, C.; Phaneuf, R.A. (eds.); Barnett, C.F.

    1990-07-01

    This report provides a handbook of recommended cross-section and rate-coefficient data for inelastic collisions between hydrogen, helium and lithium atoms, molecules and ions, and encompasses more than 400 different reactions of primary interest in fusion research. Published experimental and theoretical data have been collected and evaluated, and the recommended data are presented in tabular, graphical and parametrized form. Processes include excitation and spectral line emission, charge exchange, ionization, stripping, dissociation and particle interchange reactions. The range of collision energies is appropriate to applications in fusion-energy research.

  15. Cold atoms in singular potentials

    International Nuclear Information System (INIS)

    Denschlag, J. P.

    1998-09-01

    We studied both theoretically and experimentally the interaction between cold Li atoms from a magnetic-optical trap (MOT) and a charged or current-carrying wire. With this system, we were able to realize 1/r 2 and 1/r potentials in two dimensions and to observe the motion of cold atoms in both potentials. For an atom in an attractive 1/r 2 potential, there exist no stable trajectories, instead there is a characteristic class of trajectories for which atoms fall into the singularity. We were able to observe this falling of atoms into the center of the potential. Moreover, by probing the singular 1/r 2 potential with atomic clouds of varying size and temperature we extracted scaling properties of the atom-wire interaction. For very cold atoms, and very thin wires the motion of the atoms must be treated quantum mechanically. Here we predict that the absorption cross section for the 1/r 2 potential should exhibit quantum steps. These quantum steps are a manifestation of the quantum mechanical decomposition of plane waves into partial waves. For the second part of this work, we realized a two dimensional 1/r potential for cold atoms. If the potential is attractive, the atoms can be bound and follow Kepler-like orbits around the wire. The motion in the third dimension along the wire is free. We were able to exploit this property and constructed a novel cold atom guide, the 'Kepler guide'. We also demonstrated another type of atom guide (the 'side guide'), by combining the magnetic field of the wire with a homogeneous offset magnetic field. In this case, the atoms are held in a potential 'tube' on the side of the wire. The versatility, simplicity, and scaling properties of this guide make it an interesting technique. (author)

  16. The A.D. 1835 eruption of Volcán Cosigüina, Nicaragua: A guide for assessing local volcanic hazards

    Science.gov (United States)

    Scott, William E.; Gardner, Cynthia A.; Devoli, Graziella; Alvarez, Antonio

    2006-01-01

    The January 1835 eruption of Volcán Cosigüina in northwestern Nicaragua was one of the largest and most explosive in Central America since Spanish colonization. We report on the results of reconnaissance stratigraphic studies and laboratory work aimed at better defining the distribution and character of deposits emplaced by the eruption as a means of developing a preliminary hazards assessment for future eruptions. On the lower flanks of the volcano, a basal tephra-fall deposit comprises either ash and fine lithic lapilli or, locally, dacitic pumice. An overlying tephra-fall deposit forms an extensive blanket of brown to gray andesitic scoria that is 35–60 cm thick at 5–10 km from the summit-caldera rim, except southwest of the volcano, where it is considerably thinner. The scoria fall produced the most voluminous deposit of the eruption and underlies pyroclastic-surge and -flow deposits that chiefly comprise gray andesitic scoria. In northern and southeastern sectors of the volcano, these flowage deposits form broad fans and valley fills that locally reach the Gulf of Fonseca. An arcuate ridge 2 km west of the caldera rim and a low ridge east of the caldera deflected pyroclastic flows northward and southeastward. Pyroclastic flows did not reach the lower west and southwest flanks, which instead received thick, fine-grained, accretionary-lapilli–rich ashfall deposits that probably derived chiefly from ash clouds elutriated from pyroclastic flows. We estimate the total bulk volume of erupted deposits to be ∼6 km3. Following the eruption, lahars inundated large portions of the lower flanks, and erosion of deposits and creation of new channels triggered rapid alluviation. Pre-1835 eruptions are poorly dated; however, scoria-fall, pyroclastic-flow, and lahar deposits record a penultimate eruption of smaller magnitude than that of 1835. It occurred a few centuries earlier—perhaps in the fifteenth century. An undated sequence of thick tephra-fall deposits on

  17. Neuromorphic atomic switch networks.

    Directory of Open Access Journals (Sweden)

    Audrius V Avizienis

    Full Text Available Efforts to emulate the formidable information processing capabilities of the brain through neuromorphic engineering have been bolstered by recent progress in the fabrication of nonlinear, nanoscale circuit elements that exhibit synapse-like operational characteristics. However, conventional fabrication techniques are unable to efficiently generate structures with the highly complex interconnectivity found in biological neuronal networks. Here we demonstrate the physical realization of a self-assembled neuromorphic device which implements basic concepts of systems neuroscience through a hardware-based platform comprised of over a billion interconnected atomic-switch inorganic synapses embedded in a complex network of silver nanowires. Observations of network activation and passive harmonic generation demonstrate a collective response to input stimulus in agreement with recent theoretical predictions. Further, emergent behaviors unique to the complex network of atomic switches and akin to brain function are observed, namely spatially distributed memory, recurrent dynamics and the activation of feedforward subnetworks. These devices display the functional characteristics required for implementing unconventional, biologically and neurally inspired computational methodologies in a synthetic experimental system.

  18. Experiments with cold hydrogen atoms

    International Nuclear Information System (INIS)

    Leonas, V.B.

    1981-01-01

    Numerous investigations of atomic processes in Waseous phase on the surface with participation of ''cold'' hydrogen atoms, made during the last years, are considered. The term ''cold atom'' means the range of relative collision energies E<10 MeV (respectively 'ultracold ' atoms at E< or approximately 1 MeV) which corresponds to the range of temperatures in tens (units) of K degrees. Three main ranges of investigations where extensive experimental programs are realized are considered: study of collisional processes with hydrogen atom participation, hydrogen atoms being of astrophysical interest; study of elastic atom-molecular scattering at superlow energies and studies on the problem of condensed hydrogen. Hydrogen atoms production is realized at dissociation in non-electrode high-frequency or superhigh-frequency discharge. A method of hydrogen quantum generator and of its modifications appeared to be rather an effective means to study collisional changes of spin state of hydrogen atoms. First important results on storage and stabilization of the gas of polarized hydrogen atoms are received

  19. Can atom-surface potential measurements test atomic structure models?

    Science.gov (United States)

    Lonij, Vincent P A; Klauss, Catherine E; Holmgren, William F; Cronin, Alexander D

    2011-06-30

    van der Waals (vdW) atom-surface potentials can be excellent benchmarks for atomic structure calculations. This is especially true if measurements are made with two different types of atoms interacting with the same surface sample. Here we show theoretically how ratios of vdW potential strengths (e.g., C₃(K)/C₃(Na)) depend sensitively on the properties of each atom, yet these ratios are relatively insensitive to properties of the surface. We discuss how C₃ ratios depend on atomic core electrons by using a two-oscillator model to represent the contribution from atomic valence electrons and core electrons separately. We explain why certain pairs of atoms are preferable to study for future experimental tests of atomic structure calculations. A well chosen pair of atoms (e.g., K and Na) will have a C₃ ratio that is insensitive to the permittivity of the surface, whereas a poorly chosen pair (e.g., K and He) will have a ratio of C₃ values that depends more strongly on the permittivity of the surface.

  20. Single atom spintronics

    International Nuclear Information System (INIS)

    Sullivan, M. R.; Armstrong, J. N.; Hua, S. Z.; Chopra, H. D.

    2005-01-01

    Full text: Single atom spintronics (SASS) represents the ultimate physical limit in device miniaturization. SASS is characterized by ballistic electron transport, and is a fertile ground for exploring new phenomena. In addition to the 'stationary' (field independent) scattering centers that have a small and fixed contribution to total transmission probability of electron waves, domain walls constitute an additional and enhanced source of scattering in these magnetic quantum point contacts (QPCs), the latter being both field and spin-dependent. Through the measurement of complete hysteresis loops as a function of quantized conductance, we present definitive evidence of enhanced backscattering of electron waves by atomically sharp domain walls in QPCs formed between microfabricated thin films [1]. Since domain walls move in a magnetic field, the magnitude of spin-dependent scattering changes as the QPC is cycled along its hysteresis loop. For example, as shown in the inset in Fig. 1, from zero towards saturation in a given field direction, the resistance varies as the wall is being swept away, whereas the resistance is constant upon returning from saturation towards zero, since in this segment of the hysteresis loop no domain wall is present across the contact. The observed spin-valve like behavior is realized by control over wall width and shape anisotropy. This behavior also unmistakably sets itself apart from any mechanical artifacts; additionally, measurements made on single atom contacts provide an artifact-free environment [2]. Intuitively, it is simpler to organize the observed BMR data according to all possible transitions between different conductance plateaus, as shown by the dotted line in Fig. 1; the solid circles show experimental data for Co, which follows the predicted scheme. Requisite elements for the observation of the effect will be discussed in detail along with a review of state of research in this field. Practically, the challenge lies in making

  1. Spectroscopy of highly ionized atoms

    International Nuclear Information System (INIS)

    Livingston, A.E.

    1987-01-01

    The atomic structure and decay characteristics of excited states in multiply ionized atoms represent a fertile testing ground for atomic calculations ranging from accurate ab initio theory for few-electron systems to practical semi-empirical approaches for many-electron species. Excitation of fast ions by thin foils generally produces the highest ionization stages for heavy ions in laboratory sources. The associated characteristics of spectroscopic purity and high time resolution provide unique capabilities for studying the atomic properties of highly-ionized atoms. This report is limited to a brief discussion of three classes of atomic systems that are experiencing current theoretical and experimental interest: precision structure of helium-like ions, fine structure of doubly-excited states, and lifetimes of metastable states. Specific measurements in each of these types of systems are mentioned, with emphasis on the relation to studies involving slow, highly-charged ions

  2. Self-lacing atom chains

    International Nuclear Information System (INIS)

    Zandvliet, Harold J W; Van Houselt, Arie; Poelsema, Bene

    2009-01-01

    The structural and electronic properties of self-lacing atomic chains on Pt modified Ge(001) surfaces have been studied using low-temperature scanning tunnelling microscopy and spectroscopy. The self-lacing chains have a cross section of only one atom, are perfectly straight, thousands of atoms long and virtually defect free. The atomic chains are composed of dimers that have their bonds aligned in a direction parallel to the chain direction. At low temperatures the atomic chains undergo a Peierls transition: the periodicity of the chains doubles from a 2 x to a 4 x periodicity and an energy gap opens up. Furthermore, at low temperatures (T<80 K) novel quasi-one-dimensional electronic states are found. These quasi-one-dimensional electronic states originate from an electronic state of the underlying terrace that is confined between the atomic chains.

  3. Optical angular momentum and atoms.

    Science.gov (United States)

    Franke-Arnold, Sonja

    2017-02-28

    Any coherent interaction of light and atoms needs to conserve energy, linear momentum and angular momentum. What happens to an atom's angular momentum if it encounters light that carries orbital angular momentum (OAM)? This is a particularly intriguing question as the angular momentum of atoms is quantized, incorporating the intrinsic spin angular momentum of the individual electrons as well as the OAM associated with their spatial distribution. In addition, a mechanical angular momentum can arise from the rotation of the entire atom, which for very cold atoms is also quantized. Atoms therefore allow us to probe and access the quantum properties of light's OAM, aiding our fundamental understanding of light-matter interactions, and moreover, allowing us to construct OAM-based applications, including quantum memories, frequency converters for shaped light and OAM-based sensors.This article is part of the themed issue 'Optical orbital angular momentum'. © 2017 The Author(s).

  4. INCIDÊNCIA DE ANEMIA INFECCIOSA EQÜINA NO ESTADO DE GOIÁS INFECTIOUS ANEMIA INCIDENCE IN EQUINES IN THE GOIÁS STATE, BRAZIL

    Directory of Open Access Journals (Sweden)

    Jales Henrique Freitas Curado

    2007-09-01

    Full Text Available

    Dos 2.123 soros de eqüinos, examinados pelo método de COGGINS, encontrou-se a taxa de 3,7% de reagentes positivos para a anemia infecciosa eqüina. Estes dados indicam que, nos municípios estudados no Estado de Goiás, os índices de prevalência estão dentro dos limites esperados, especialmente nos municípios localizados em áreas alagadiças, onde a veiculação da doença é mais intensa.

    From 2,123 equine serum examined by COGGINS method it was found 3.7% positive reagents for equine infections anemia. The data indicate that, for the counties studied in the State of Goiás, prevalence rates are within the expected range, especially in the counties with flooded areas where disease incidence is more intense.

  5. GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

    Science.gov (United States)

    Hospodková, Alice; Vyskočil, Jan; Zíková, Markéta; Oswald, Jiří; Pangrác, Jiří; Petříček, Otto

    2017-02-01

    Type-II band alignment offers several advantages for proposed intermediate band solar cell structures. We focused on the quantum dot (QD) solar cell structures based on type-II InAs/GaAs QD layers capped with GaAsSb strain reducing layers. The GaAsSb strain reducing layers were prepared with or without graded Sb concentration. Strong enhancement of photocurrent was achieved by adding an InGaAs buffer layer under the type-II QD structure, thanks to improved electron extraction from QDs. For comparison, a structure with GaAs-capped InAs QDs was prepared, too. Properties of all structures are compared and the mechanism of carrier extraction or relaxation is discussed. Gradient of antimony concentration in a strain reducing layer (SRL) significantly improved resulting properties of solar cell structures. It is shown that in a multiple-QD structure with a GaAsSb SRL, electrons and holes have non-intersecting trajectories which prevents carrier recombination and improves the efficiency of solar cell structures. NextNano band structure calculations of different types of structures support our experimental results.

  6. Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband

    International Nuclear Information System (INIS)

    Ishi-Hayase, J.; Akahane, K.; Yamamoto, N.; Kujiraoka, M.; Inoue, J.; Ema, K.; Tsuchiya, M.; Sasaki, M.

    2006-01-01

    We investigate the excitonic dephasing in a stack of self-assembled quantum dots (SAQDs) by using a four-wave-mixing (FWM) technique performed in the optical telecomm-fiber wavelength region at 6 K. A sample used in our experiment is a 150-layer stack of InAs SAQDs embedded in InGaAlAs grown on InP(3 1 1)B substrate fabricated by molecular beam epitaxy. By using a novel strain-controlled technique, the resonant wavelength of the exciton ground state (GS) ranges from 1.25 to 1.5 μm which is much longer than that in typical In(Ga)As SAQDs. In the weak excitation region, the intrinsic dephasing time of excitons at the excitation wavelength of 1.43 μm reaches 770 ps which is much longer than that in most SAQDs with the resonant wavelength of <1 μm. We also find a strong anisotoropy of the signal intensity with respect to the crystal axis attributed to the orientation of InP(3 1 1)B substrate and the elongated shape of QDs

  7. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Utrilla, A. D.; Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Departamento de Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; González, D.; Ben, T. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2014-07-28

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.

  8. Competitive growth mechanisms of InAs quantum dots on InxGa1-xAs layer during post growth interruption

    International Nuclear Information System (INIS)

    Yang, Changjae; Kim, Jungsub; Sim, Uk; Lee, Jaeyel; Choi, Won Jun; Yoon, Euijoon

    2010-01-01

    We investigated the effect of the post growth interruption (GI) on InAs quantum dots (QDs) grown on In x Ga 1-x As strained buffer layers (SBL). When QDs were grown on the 5 and 10% In content SBLs by using post GI, the size of QDs increased as its density decreased. Based on the 50 meV red-shift of PL in these cases, the transport of materials between QDs leads to the increase of QD size with maintaining its composition during the post GI. On the other hand, when using SBLs with the 15 and 20% In contents, the size of QDs increased, but its density was a little reduced. In addition, PL results were observed blue-shifted by about 20 meV and 2 meV, respectively. Considering the interruption of source gases during the post GI, these observations are strong evidence of the Ga incorporation from 15 and 20% In content SBLs. Therefore, these results imply that the dominant mechanism which increases the size of QDs during the post GI depends on the growth condition of SBL.

  9. Atoms in astronomy

    Science.gov (United States)

    Blanchard, P. A.

    1976-01-01

    Aspects of electromagnetic radiation and atomic physics needed for an understanding of astronomical applications are explored. Although intended primarily for teachers, this brochure is written so that it can be distributed to students if desired. The first section, Basic Topics, is suitable for a ninth-grade general science class; the style is simple and repetitive, and no mathematics or physics background is required. The second section, Intermediate and Advanced Topics, requires a knowledge of the material in the first section and assumes a generally higher level of achievement and motivation on the part of the student. These latter topics might fit well into junior-level physics, chemistry, or earth-science courses. Also included are a glossary, a list of references and teaching aids, class exercises, and a question and answer section.

  10. Atomic war field Europe

    International Nuclear Information System (INIS)

    Calder, N.

    1980-01-01

    Progressive atomic weapons, results of a perfect and perfidious technology face each other in the centre of a possible crisis - in Europe. The strategists of the Warszhaw Pact and of Nato seem very optimistic, which they owe to their professions, the population's increasing fear of a war, however, can no longer be denied. Nervous military personnel, political and religions fanatics and perplexed politicians sit at the switches of fear - without a concept and without alternatives. Despite this alarming conditions, Nigel Calder who has investigated in the USA and in the USSR, and in Europe, managed to remain a calm spectator of the imminent apocalypse. Without compromises and clearly he analyses the nearly hopeless consequences resulting from the changed world-political situation, the tremendously fast development of the arms technology, and the crazy strategical doctrines in East and West and in the Third World. (orig./UA) [de

  11. Atomic Basic Blocks

    Science.gov (United States)

    Scheler, Fabian; Mitzlaff, Martin; Schröder-Preikschat, Wolfgang

    Die Entscheidung, einen zeit- bzw. ereignisgesteuerten Ansatz für ein Echtzeitsystem zu verwenden, ist schwierig und sehr weitreichend. Weitreichend vor allem deshalb, weil diese beiden Ansätze mit äußerst unterschiedlichen Kontrollflussabstraktionen verknüpft sind, die eine spätere Migration zum anderen Paradigma sehr schwer oder gar unmöglich machen. Wir schlagen daher die Verwendung einer Zwischendarstellung vor, die unabhängig von der jeweils verwendeten Kontrollflussabstraktion ist. Für diesen Zweck verwenden wir auf Basisblöcken basierende Atomic Basic Blocks (ABB) und bauen darauf ein Werkzeug, den Real-Time Systems Compiler (RTSC) auf, der die Migration zwischen zeit- und ereignisgesteuerten Systemen unterstützt.

  12. Atomic energy law Netherlands

    International Nuclear Information System (INIS)

    Bischof, W.

    1976-01-01

    The volume contains the valid national legal regulations of the Kingdom of the Netherlands in the field of the peaceful uses of nuclear energy as per October 1st, 1975. These regulations are arranged according to the following subjects: 1) general atomic energy law and organization; 2) liability; 3) nuclear facilities, reactor ships, fissionable material and ores; 4) radiation protection; 5) carriage; 6) import and export; 7) international agreements. Within these subject groups the regulations are presented chronologically. They have consecutive numbers, printed at the top of the margins for easier location. As a rule, the full text of the laws, royal ordonances and ministerial orders is given. However, in the case of regulations only containing in parts stipulations concerning nuclear law, only the pertinent texts have been considered. (orig./HP) [de

  13. Atomic iodine laser

    Energy Technology Data Exchange (ETDEWEB)

    Fisk, G.A.; Gusinow, M.A.; Hays, A.K.; Padrick, T.D.; Palmer, R.E.; Rice, J.K.; Truby, F.K.; Riley, M.E.

    1978-05-01

    The atomic iodine photodissociation laser has been under intensive study for a number of years. The physics associated with this system is now well understood and it is possible to produce a 0.1 nsec (or longer) near-diffraction-limited laser pulse which can be amplified with negligible temporal distortion and little spatial deformation. The output of either a saturated or unsaturated amplifier consists of a high-fidelity near-diffraction-limited, energetic laser pulse. The report is divided into three chapters. Chapter 1 is a survey of the important areas affecting efficient laser operation and summarizes the findings of Chap. 2. Chapter 2 presents detailed discussions and evaluations pertinent to pumps, chemical regeneration, and other elements in the overall laser system. Chapter 3 briefly discusses those areas that require further work and the nature of the work required to complete the full-scale evaluation of the applicability of the iodine photodissociation laser to the inertial confinement program.

  14. Atomic Australia: 1944-1990

    International Nuclear Information System (INIS)

    Cawte, Alice.

    1992-01-01

    This book tells how successive Australian governments pursued the elusive uranium dream. With Australian uranium committed to the West's atomic arsenals, Australia seemed set to become a nation powered by the atom. But by the mid-1950 the Australian government learnt that their expectations were premature, if not unrealistic. The background of the creation of the Australian Atomic Energy Commission is also given along with the examination of the uranium controversies of the 1970s and 1980s. 150 refs

  15. Molecular invariants: atomic group valence

    International Nuclear Information System (INIS)

    Mundim, K.C.; Giambiagi, M.; Giambiagi, M.S. de.

    1988-01-01

    Molecular invariants may be deduced in a very compact way through Grassman algebra. In this work, a generalized valence is defined for an atomic group; it reduces to the Known expressions for the case of an atom in a molecule. It is the same of the correlations between the fluctions of the atomic charges qc and qd (C belongs to the group and D does not) around their average values. Numerical results agree with chemical expectation. (author) [pt

  16. Atomic absorption spectrophotometry in perspective

    International Nuclear Information System (INIS)

    Soffiantini, V.

    1981-01-01

    Atomic absorption spectrophotometry is essentially an analytical technique used for quantitative trace metal analysis in a variety of materials. The speed and specificity of the technique is its greatest advantage over other analytical techniques. What atomic absorption spectrophotometry can and cannot do and its advantages and disadvantages are discussed, a summary of operating instructions are given, as well as a summary of analytical interferences. The applications of atomic absorption spectrophotometry are also shortly discussed

  17. Study on laser atomic spectroscopy

    International Nuclear Information System (INIS)

    Lee, Jong Min; Song, Kyu Seok; Jeong, Do Young; Kim, Chul Joong; Han, Phil Soon

    1992-01-01

    Electric discharge type atomic vaporizer is developed for the spectroscopic study on actinide elements. Laser induced fluorescence study on actinide elements is performed by using this high temperature type atomizer. For the effective photoionization of elements, copper vapor laser pumped dye laser and electron beam heating type atomic vaporizer are built and their characteristics are measured. In addition, resonance ionization mass spectroscopic analysis for lead sample as well as laser induced fluorescence study on uranium sample in solution phase is made. (Author)

  18. Giant atoms cast long shadow

    International Nuclear Information System (INIS)

    Amato, I.

    1996-01-01

    Atoms swollen with energy can serve as supersensitive detectors. They also probe the shadow realm where the quantum world of the atom gives way to the familiar classical world. Created in the laboratory, where they live for a few milliseconds inside vacuum chambers, Rydberg atoms acquire their girth when one or sometimes two of their electrons are excited to very high energy levels, displacing them far from the nuclear core. This article describes the atoms, the history of their identification, and future possibilities. 2 figs

  19. Quantum information with Rydberg atoms

    DEFF Research Database (Denmark)

    Saffman, Mark; Walker, T.G.; Mølmer, Klaus

    2010-01-01

    Rydberg atoms with principal quantum number n»1 have exaggerated atomic properties including dipole-dipole interactions that scale as n4 and radiative lifetimes that scale as n3. It was proposed a decade ago to take advantage of these properties to implement quantum gates between neutral atom...... of multiqubit registers, implementation of robust light-atom quantum interfaces, and the potential for simulating quantum many-body physics. The advances of the last decade are reviewed, covering both theoretical and experimental aspects of Rydberg-mediated quantum information processing....

  20. Atomic masses 1995. The 1995 atomic mass evaluation

    International Nuclear Information System (INIS)

    Audi, G.; Wapstra, A.H.

    1995-01-01

    The 1995 atomic mass evaluation by G. Audi and A.H. Wapstra is documented. The resulting data files containing recommended values of atomic masses, obtained by experiment or systematics, and related data such as reaction and separation energies are described. The data files can be obtained through online services from several nuclear data centers or on magnetic tape, free of charge. (author)

  1. Systematics of atom-atom collision strengths at high speeds

    International Nuclear Information System (INIS)

    Gillespie, G.H.; Inokuti, M.

    1980-01-01

    The collision strengths for atom-atom collisions at high speeds are calculated in the first Born approximation. We studied four classes of collisions, distinguished depending upon whether each of the collision partners becomes excited or not. The results of numerical calculations of the collision strengths are presented for all neutral atoms with Z< or =18. The calculations are based on atomic form factors and incoherent scattering functions found in the literature. The relative contribution of each class of collision processes to the total collision cross section is examined in detail. In general, inelastic processes dominate for low-Z atoms, while elastic scattering is more important for large Z. Other systematics of the collision strengths are comprehensively discussed. The relevant experimental literature has been surveyed and the results of this work for the three collision systems H-He, He-He, and H-Ar are compared with the data for electron-loss processes. Finally, suggestions are made for future work in measurements of atom-atom and ion-atom collision cross sections

  2. Atomic Force Microscopy and Real Atomic Resolution. Simple Computer Simulations

    NARCIS (Netherlands)

    Koutsos, V.; Manias, E.; Brinke, G. ten; Hadziioannou, G.

    1994-01-01

    Using a simple computer simulation for AFM imaging in the contact mode, pictures with true and false atomic resolution are demonstrated. The surface probed consists of two f.c.c. (111) planes and an atomic vacancy is introduced in the upper layer. Changing the size of the effective tip and its

  3. Atomic masses 1993. The 1993 atomic mass evaluation

    International Nuclear Information System (INIS)

    Audi, G.; Wapstra, A.H.

    1993-01-01

    The 1993 atomic mass evaluation by G. Audi and A.H. Wapstra is documented. The resulting data files containing recommended values of atomic masses, obtained by experiment of systematics, and related data such as reaction and separation energies are described. The data files can be obtained through online services from several nuclear data centers or on magnetic tape, free of charge. (author)

  4. prepared via atom transfer radical polymerization, reverse atom

    Indian Academy of Sciences (India)

    Synthesis and characterization of poly(2-ethylhexyl acrylate) prepared via atom transfer radical polymerization, reverse atom transfer radical polymerization and ... Zydex Industries, 25-A Gandhi Oil Mill Compound, Gorwa, Vadodara 390 016, India; Rubber Technology Centre, Indian Institute of Technology Kharagpur, ...

  5. Non-Elastic Processes in Atom Rydberg-Atom Collisions

    Indian Academy of Sciences (India)

    2016-01-27

    Jan 27, 2016 ... Inour previous research, it has been demonstrated that inelastic processes in atom Rydberg-atom collisions, such as chemi-ionization and ( n − n ′ ) mixing, should be considered together. Here we will review the present state-of-the-art and the actual problems. In this context, we will consider the influence ...

  6. Atomic absorption instrument functional description

    International Nuclear Information System (INIS)

    Bystroff, R.I.; Boyle, W.G. Jr.; Barton, G.W. Jr.

    1976-01-01

    This report describes a proposed system for automating atomic absorption analysis. The system consists of two atomic absorption instruments and an automatic sampler that can be attached to either instrument. A computer program controls the sampling and gathers data. The program then uses the data to perform bookkeeping, data processing, and report writing

  7. Electromagnetic trapping of neutral atoms

    International Nuclear Information System (INIS)

    Metcalf, H.J.

    1986-01-01

    Cooling and trapping of neutral atoms is a new branch of applied physics that has potential for application in many areas. The authors present an introduction to laser cooling and magnetic trapping. Some basic ideas and fundamental limitations are discussed, and the first successful experiments are reviewed. Trapping a neutral object depends on the interaction between an inhomogeneous electromagnetic field and a multiple moment that results in the exchange of kinetic for potential energy. In neutral atom traps, the potential energy must be stored as internal atomic energy, resulting in two immediate and extremely important consequences. First, the atomic energy levels will necessarily shift as the atoms move in the trap, and, second, practical traps for ground state neutral atoms atr necessarily very shallow compared to thermal energy. This small depth also dictates stringent vacuum requirements because a trapped atom cannot survive a single collision with a thermal energy background gas molecule. Neutral trapping, therefore, depends on substantial cooling of a thermal atomic sample and is inextricably connected with the cooling process

  8. High efficiency atomic hydrogen source

    International Nuclear Information System (INIS)

    Lagomarsino, V.; Bassi, D.; Bertok, E.; De Paz, M.; Tommasini, F.

    1974-01-01

    This work presents preliminary results of research intended to produce a M.W. discharge atomic hydrogen source with good dissociation at pressures larger than 10 torr. Analysis of the recombination process at these pressures shows that the volume recombination by three body collisions may be more important than wall recombination or loss of atoms by diffusion and flow outside the discharge region

  9. Stopping atoms with diode lasers

    International Nuclear Information System (INIS)

    Watts, R.N.; Wieman, C.E.

    1986-01-01

    The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

  10. Atomic toposes and countable categoricity

    OpenAIRE

    Caramello, Olivia

    2008-01-01

    We give a model-theoretic characterization of the class of geometric theories classified by an atomic topos having enough points; in particular, we show that every complete geometric theory classified by an atomic topos is countably categorical. Some applications are also discussed.

  11. Laser cooling of neutral atoms

    International Nuclear Information System (INIS)

    1993-01-01

    A qualitative description of laser cooling of neutral atoms is given. Two of the most important mechanisms utilized in laser cooling, the so-called Doppler Cooling and Sisyphus Cooling, are reviewed. The minimum temperature reached by the atoms is derived using simple arguments. (Author) 7 refs

  12. Bohmian picture of Rydberg atoms

    Indian Academy of Sciences (India)

    Abstract. Unlike the previous theoretical results based on standard quantum mechanics that established the nearly elliptical shapes for the centre-of-mass motion in Rydberg atoms using numerical simulations, we show analytically that the Bohmian trajectories in Rydberg atoms are nearly elliptical.

  13. Atomic Energy Authority Act 1954

    International Nuclear Information System (INIS)

    1954-01-01

    This Act provides for the setting up of an Atomic Energy Authority for the United Kingdom. It also makes provision for the Authority's composition, powers, duties, rights and liabilities, and may amend, as a consequence of the establishment of the Authority and in connection therewith, the Atomic Energy Act, 1946, the Radioactive Substances Act 1948 and other relevant enactments. (NEA) [fr

  14. Hot atom chemistry of carbon

    International Nuclear Information System (INIS)

    Wolf, A.P.

    1975-01-01

    The chemistry of energetic carbon atoms is discussed. The experimental approach to studies that have been carried out is described and the mechanistic framework of hot carbon atom reactions is considered in some detail. Finally, the direction that future work might take is examined, including the relationship of experimental to theoretical work. (author)

  15. Electromagnetic transitions in the atom

    International Nuclear Information System (INIS)

    Ulehla, I.; Suk, M.; Trka, Z.

    1990-01-01

    Methods to achieve excitation of atoms are outlined and conditions necessary for the occurrence of electromagnetic transitions in the atomic shell are given. Radiative transitions between the energy states of the atom include stimulated absorption, spontaneous emission, and stimulated emission. Selection rules applying to the majority of observed transitions are given. The parity concept is explained. It is shown how the electromagnetic field and its interaction with the magnetic moment of the atom lead to a disturbance of the energy states of the atom and the occurrence of various electro-optical and magneto-optical phenomena. The Stark effect and electron spin resonance are described. X-rays and X-ray spectra, the Auger effect and the internal photoeffect are also dealt with. The principle of the laser is explained. (M.D.). 22 figs., 1 tab

  16. Exotic objects of atomic physics

    Science.gov (United States)

    Eletskii, A. V.

    2017-11-01

    There has been presented a short survey of physical properties, methods of production and exploration as well as directions of practical usage of the objects of atomic physics which are not yet described in detail in modern textbooks and manuals intended for students of technical universities. The family of these objects includes negative and multicharged ions, Rydberg atoms, excimer molecules, clusters. Besides of that, in recent decades this family was supplemented with new nanocarbon structures such as fullerenes, carbon nanotubes and graphene. The textbook “Exotic objects of atomic physics” [1] edited recently contains some information on the above-listed objects of the atomic physics. This textbook can be considered as a supplement to classic courses of atomic physics teaching in technical universities.

  17. Cold atoms close to surfaces

    DEFF Research Database (Denmark)

    Krüger, Peter; Wildermuth, Stephan; Hofferberth, Sebastian

    2005-01-01

    Microscopic atom optical devices integrated on atom chips allow to precisely control and manipulate ultra-cold (T atoms and Bose-Einstein condensates (BECs) close to surfaces. The relevant energy scale of a BEC is extremely small (down to ... be utilized as a sensor for variations of the potential energy of the atoms close to the surface. Here we describe how to use trapped atoms as a measurement device and analyze the performance and flexibility of the field sensor. We demonstrate microscopic magnetic imaging with simultaneous high spatial...... variations of the current flow direction, resulting from local properties of the wire. These disorder potentials found near lithographically fabricated wires are two orders of magnitude smaller than those measured close to electroplated conductors....

  18. Atomic spectroscopy and radiative processes

    CERN Document Server

    Landi Degl'Innocenti, Egidio

    2014-01-01

    This book describes the basic physical principles of atomic spectroscopy and the absorption and emission of radiation in astrophysical and laboratory plasmas. It summarizes the basics of electromagnetism and thermodynamics and then describes in detail the theory of atomic spectra for complex atoms, with emphasis on astrophysical applications. Both equilibrium and non-equilibrium phenomena in plasmas are considered. The interaction between radiation and matter is described, together with various types of radiation (e.g., cyclotron, synchrotron, bremsstrahlung, Compton). The basic theory of polarization is explained, as is the theory of radiative transfer for astrophysical applications. Atomic Spectroscopy and Radiative Processes bridges the gap between basic books on atomic spectroscopy and the very specialized publications for the advanced researcher: it will provide under- and postgraduates with a clear in-depth description of theoretical aspects, supported by practical examples of applications.

  19. ILO and atomic energy

    International Nuclear Information System (INIS)

    1961-01-01

    The work of the International Labour Organisation in the field of atomic energy has been concerned primarily with the protection of the worker against radiation; in this respect it developed the work carried out before the war on the occupational pathology of roentgen ray operators, radium and radioactive substances and uranium. In view of the extremely serious consequences to society and the individual that would result from a neglect of the essential precautions, the ILO has to adopt international standards setting out the essential precautions that should be observed in a work which may entail a radiation hazard. The 44th International Labour Conference, meeting in the summer of 1960, adopted a convention and recommendation on this subject. The Convention applies to all activities involving exposure of workers to ionizing radiations in the course of their work and provides that each Member of the ILO which ratifies it shall undertake to give effect to it by means of laws or regulations, codes of practice or other appropriate means. It further provides that the necessary steps taken at the national level to ensure effective protection should be progressively brought in line with the provisions of the Convention after its ratification

  20. Atoms in astrophysics

    CERN Document Server

    Eissner, W; Hummer, D; Percival, I

    1983-01-01

    It is hard to appreciate but nevertheless true that Michael John Seaton, known internationally for the enthusiasm and skill with which he pursues his research in atomic physics and astrophysics, will be sixty years old on the 16th of January 1983. To mark this occasion some of his colleagues and former students have prepared this volume. It contains articles that de­ scribe some of the topics that have attracted his attention since he first started his research work at University College London so many years ago. Seaton's association with University College London has now stretched over a period of some 37 years, first as an undergraduate student, then as a research student, and then, successively, as Assistant Lecturer, Lecturer, Reader, and Professor. Seaton arrived at University College London in 1946 to become an undergraduate in the Physics Department, having just left the Royal Air Force in which he had served as a navigator in the Pathfinder Force of Bomber Command. There are a number of stories of ho...

  1. Safeguards for the atom

    International Nuclear Information System (INIS)

    1959-01-01

    Concern over the destructive potentialities of nuclear energy has grown all over the world. In fact, it was this concern, coupled with an awareness of the equally great potentialities for peaceful prosperity, that led to the establishment of the International Atomic Energy Agency. That nuclear energy should be used solely for peaceful purposes is an ideal to which all people would subscribe. Realization of this ideal, however, is dependent on many complex factors which are outside the scope of the Agency. In its own limited sphere, however, the Agency has the responsibility to ensure that in its efforts to promote the peaceful uses it does not in any way increase the potentiality of military use. The possibility of military application is not the only danger that the Agency must guard against, it has a further function arising from the nature of the materials needed in atomic energy work. Since the basic materials are radioactive and since all ionizing radiation is potentially dangerous, the Agency must ensure that in helping its Member States to develop the peaceful uses of atomic energy it does not increase the hazards of nuclear radiation or radioactive contamination. It must establish standards of safe practice for activities carried out under its auspices or with its assistance. Since the safeguards will have two distinct objectives, a distinction can be made between those which will be designed to prevent the diversion of Agency assistance to military use and those against health and safety hazards. So far as the health and safety measures are concerned, a good deal of work has already been done in determining the standards of safe practice which will be the basis for the relevant rules. The Agency has published the first in its series of safety manuals, 'Safe Handling of Radioisotopes', which deals with such standards. Safeguards against the diversion or loss of nuclear materials and facilities are more difficult to devise. It is not considered feasible for

  2. Atomic Configuration and Conductance of Tantalum Single-Atom Contacts and Single-Atom Wires

    Science.gov (United States)

    Kizuka, Tokushi; Murata, Satoshi

    2017-09-01

    The tensile deformation and successive fracture process of tantalum (Ta) nanocontacts (NCs) while applying various bias voltages was observed in situ by high-resolution transmission electron microscopy using a picometer-precision dual-goniometer nanotip manipulation technique. Simultaneously, the variation in the conductance of the contacts was measured. The NCs were thinned atom by atom during mechanical elongation, resulting in the formation of two types of single-atom cross-sectional contacts: single-atom contacts (SACs) and single-atom wires (SAWs), in which two electrodes, typically nanotips, are connected by a single shared atom or a one-line array of single atoms, respectively. When the bias voltage was 11 mV, Ta SACs were formed during tensile deformation; however, elongation of the single-atom cross-sectional part did not occur. In contrast, when the bias voltage was increased to 200 mV, Ta SACs were first formed during the tensile deformation, followed by elongation of the single-atom cross section up to a length of three atoms, i.e., the formation of SAWs. Thus, the present observation shows that Ta SAWs are stable even at such a high bias voltage. The conductance of the SACs was approximately 0.10G0 (G0 = 2e2/h, where e is the electron charge and h is Planck’s constant), whereas the conductance of the three-atom-long SAWs ranged from 0.01G0 to 0.22G0. Lower conductances were observed for linear SAWs, whereas higher conductances resulted from kinked SAWs.

  3. Optically polarized atoms understanding light-atom interactions

    CERN Document Server

    Auzinsh, Marcis; Rochester, Simon M

    2010-01-01

    This book is addressed at upper-level undergraduate and graduate students involved in research in atomic, molecular, and optical Physics. It will also be useful to researchers practising in this field. It gives an intuitive, yet sufficiently detailed and rigorous introduction to light-atom interactions with a particular emphasis on the symmetry aspects of the interaction, especially those associated with the angular momentum of atoms and light. The book will enable readers to carryout practical calculations on their own, and is richly illustrated with examples drawn from current research topic

  4. Atom interferometry with trapped Bose-Einstein condensates: impact of atom-atom interactions

    International Nuclear Information System (INIS)

    Grond, Julian; Hohenester, Ulrich; Mazets, Igor; Schmiedmayer, Joerg

    2010-01-01

    Interferometry with ultracold atoms promises the possibility of ultraprecise and ultrasensitive measurements in many fields of physics, and is the basis of our most precise atomic clocks. Key to a high sensitivity is the possibility to achieve long measurement times and precise readout. Ultracold atoms can be precisely manipulated at the quantum level and can be held for very long times in traps; they would therefore be an ideal setting for interferometry. In this paper, we discuss how the nonlinearities from atom-atom interactions, on the one hand, allow us to efficiently produce squeezed states for enhanced readout and, on the other hand, result in phase diffusion that limits the phase accumulation time. We find that low-dimensional geometries are favorable, with two-dimensional (2D) settings giving the smallest contribution of phase diffusion caused by atom-atom interactions. Even for time sequences generated by optimal control, the achievable minimal detectable interaction energy ΔE min is of the order of 10 -4 μ, where μ is the chemical potential of the Bose-Einstein condensate (BEC) in the trap. From these we have to conclude that for more precise measurements with atom interferometers, more sophisticated strategies, or turning off the interaction-induced dephasing during the phase accumulation stage, will be necessary.

  5. Giant light enhancement in atomic clusters

    International Nuclear Information System (INIS)

    Gadomsky, O. N.; Gadomskaya, I. V.; Altunin, K. K.

    2009-01-01

    We show that the polarizing effect of the atoms in an atomic cluster can lead to full compensation of the radiative damping of excited atomic states, a change in the sign of the dispersion of the atomic polarizability, and giant light enhancement by the atomic cluster.

  6. Atomic energy review

    International Nuclear Information System (INIS)

    1971-01-01

    The ATOMIC ENERGY REVIEW (AER), a periodical started in 1963 in accordance with the recommendation made by the Scientific Advisory Committee, is now preparing for its tenth year of publication. The journal appears quarterly (ca 900 pages/year) and occasionally has special issues and supplements. From 1963 to 1971 AER developed into an important international high-standard scientific journal which keeps scientists in Member States informed on progress in various fields of nuclear energy. The Agency's specific role of helping 'developing countries to further their science and education' is reflected in the publication policy of the journal. The subject scope of AER, which was determined at the journal's inception, is very broad. It covers topics in experimental and theoretical physics, nuclear electronics and equipment, physics and technology of reactors and reactor materials and fuels, radio-chemistry, and industrial, medical and other uses of radioisotopes. In other words, almost any subject related to the peaceful application of nuclear energy can qualify for inclusion. Specifically, at any particular time the selection criteria for topics are influenced by the Agency's current programme and interests. AER carries comprehensive review articles, critical state-of-the-art and current awareness surveys, and reports on the important meetings organized or sponsored by the Agency. The following four subsections gradually became necessary to do justice to this variety of material: 'Reviews' proper, 'Current Research and Development', 'Special Item' and 'Conferences and Symposia'. Apart from the conference reports, one hundred and twenty-five reviews, almost all of which were published in English to make them accessible to a wide public, have so far been published

  7. Screening of agricultural wastes as a medium production of catalase for enzymatic fuel cell by Neurospora crassa InaCC F226

    Science.gov (United States)

    Santoso, Pugoh; Yopi

    2017-12-01

    Explorations of local microorganisms from Indonesia that can produce of catalase are still limited. Neurospora crassa is a fungus which resulting of two kinds of catalase, namely catalase-1 and catalase-3. We studied the production of catalase by Neurospora crassa (no. F226) from Indonesia Culture Collection (InaCC) in Solid State Fermentation (SSF). Among four screened agro wastes (corn cob, rice straw, oil palm empty fruit bunches, and bagasse), rice straw and oil palm empty fruit bunches (OPEFB) were remarked as the most promising substrate suited for the excellent growth and adequate production of catalase. Based on the result, the method of solid state fermentation was suitable to production of catalase. It is caused that the medium served to maintain microbial growth and metabolism. The filamentous filament is more suitable for living on solid media because it has a high tolerance to low water activity, and it has a high potential to excrete hydrolytic enzymes that caused of its morphology. The filamentous filament morphology allows the fungus to form colonies and penetrate the solid substrates in order to obtain nutrients. The results showed that the highest catalase activity was obtained on rice straw and oil palm empty fruit bunches medium with catalase activity of 39.1 U/mL and 37,7 U/mL in 50% moisture content medium, respectively. Optimization of humidity and pH medium in the rice straw were investigated which is the highest activity obtained in 30% moisture content and pH medium of 6. The catalase activity was reached in the value of 53.761 U/mL and 56.903 U/mL by incubated 48 hours and 96 hours, respectively.

  8. PubChem atom environments.

    Science.gov (United States)

    Hähnke, Volker D; Bolton, Evan E; Bryant, Stephen H

    2015-01-01

    Atom environments and fragments find wide-spread use in chemical information and cheminformatics. They are the basis of prediction models, an integral part in similarity searching, and employed in structure search techniques. Most of these methods were developed and evaluated on the relatively small sets of chemical structures available at the time. An analysis of fragment distributions representative of most known chemical structures was published in the 1970s using the Chemical Abstracts Service data system. More recently, advances in automated synthesis of chemicals allow millions of chemicals to be synthesized by a single organization. In addition, open chemical databases are readily available containing tens of millions of chemical structures from a multitude of data sources, including chemical vendors, patents, and the scientific literature, making it possible for scientists to readily access most known chemical structures. With this availability of information, one can now address interesting questions, such as: what chemical fragments are known today? How do these fragments compare to earlier studies? How unique are chemical fragments found in chemical structures? For our analysis, after hydrogen suppression, atoms were characterized by atomic number, formal charge, implicit hydrogen count, explicit degree (number of neighbors), valence (bond order sum), and aromaticity. Bonds were differentiated as single, double, triple or aromatic bonds. Atom environments were created in a circular manner focused on a central atom with radii from 0 (atom types) up to 3 (representative of ECFP_6 fragments). In total, combining atom types and atom environments that include up to three spheres of nearest neighbors, our investigation identified 28,462,319 unique fragments in the 46 million structures found in the PubChem Compound database as of January 2013. We could identify several factors inflating the number of environments involving transition metals, with many

  9. Spontaneous emission by moving atoms

    International Nuclear Information System (INIS)

    Meystre, P.; Wilkens, M.

    1994-01-01

    It is well known that spontaneous emission is not an intrinsic atomic property, but rather results from the coupling of the atom to the vacuum modes of the electromagnetic field. As such, it can be modified by tailoring the electromagnetic environment into which the atom can radiate. This was already realized by Purcell, who noted that the spontaneous emission rate can be enhanced if the atom placed inside a cavity is resonant with one of the cavity is resonant with one of the cavity modes, and by Kleppner, who discussed the opposite case of inhibited spontaneous emission. It has also been recognized that spontaneous emission need not be an irreversible process. Indeed, a system consisting of a single atom coupled to a single mode of the electromagnetic field undergoes a periodic exchange of excitation between the atom and the field. This periodic exchange remains dominant as long as the strength of the coupling between the atom and a cavity mode is itself dominant. 23 refs., 6 figs

  10. Classical approach in atomic physics

    International Nuclear Information System (INIS)

    Solov'ev, E.A.

    2011-01-01

    The application of a classical approach to various quantum problems - the secular perturbation approach to quantization of a hydrogen atom in external fields and a helium atom, the adiabatic switching method for calculation of a semiclassical spectrum of a hydrogen atom in crossed electric and magnetic fields, a spontaneous decay of excited states of a hydrogen atom, Gutzwiller's approach to Stark problem, long-lived excited states of a helium atom discovered with the help of Poincare section, inelastic transitions in slow and fast electron-atom and ion-atom collisions - is reviewed. Further, a classical representation in quantum theory is discussed. In this representation the quantum states are treated as an ensemble of classical states. This approach opens the way to an accurate description of the initial and final states in classical trajectory Monte Carlo (CTMC) method and a purely classical explanation of tunneling phenomenon. The general aspects of the structure of the semiclassical series such as renormalization group symmetry, criterion of accuracy and so on are reviewed as well. (author)

  11. Atom Optics in a Nutshell

    Science.gov (United States)

    Meystre, Pierre

    This chapter presents a brief introduction to atom optics, assuming only a basic knowledge of elementary physics ideas such as conservation of energy and conservation of momentum, and making only limited use of elementary algebra. Starting from a historical perspective we introduce the idea of wave-particle duality, a fundamental tenet of quantum mechanics that teaches us that atoms, just like light, behave sometimes as waves, and sometimes as particles. It is this profound but counter-intuitive property that allows one to do with atoms much of what is familiar from conventional optics. However, because in contrast to photons atoms have a mass, there are also fundamental differences between the two that have important consequences. In particular this property opens up a number of applications that are ill-suited for conventional optical methods. After explaining why it is particularly advantageous to work at temperatures close to absolute zero to benefit most readily from the wave nature of atoms we discuss several of these applications, concentrating primarily on the promise of atom microscopes and atom interferometers in addressing fundamental and extraordinarily challenging questions at the frontier of current physics knowledge.

  12. Sample Preprocessing For Atomic Spectrometry

    International Nuclear Information System (INIS)

    Kim, Sun Tae

    2004-08-01

    This book gives descriptions of atomic spectrometry, which deals with atomic absorption spectrometry such as Maxwell-Boltzmann equation and Beer-Lambert law, atomic absorption spectrometry for solvent extraction, HGAAS, ETASS, and CVAAS and inductively coupled plasma emission spectrometer, such as basic principle, generative principle of plasma and device and equipment, and interferences, and inductively coupled plasma mass spectrometry like device, pros and cons of ICP/MS, sample analysis, reagent, water, acid, flux, materials of experiments, sample and sampling and disassembling of sample and pollution and loss in open system and closed system.

  13. Mechanical filter for alkali atoms

    CERN Document Server

    Toporkov, D K

    2000-01-01

    A device for separating gases of different mass is discussed. Such a device could be used in a laser-driven spin exchange source of polarized hydrogen atoms to reduce the contamination of alkali atoms. A Monte Carlo simulation has shown that the suggested apparatus based on a commercial turbo pump could reduce by a factor of 10-15 the concentration of the alkali-metal atoms in the hydrogen flow from a laser driven polarized source. This would greatly enhance the effective polarization in hydrogen targets.

  14. Atomic collisions involving pulsed positrons

    DEFF Research Database (Denmark)

    Merrison, J. P.; Bluhme, H.; Field, D.

    2000-01-01

    Conventional slow positron beams have been widely and profitably used to study atomic collisions and have been instrumental in understanding the dynamics of ionization. The next generation of positron atomic collision studies are possible with the use of charged particle traps. Not only can large...... instantaneous intensities be achieved with in-beam accumulation, but more importantly many orders of magnitude improvement in energy and spatial resolution can be achieved using positron cooling. Atomic collisions can be studied on a new energy scale with unprecedented precion and control. The use...

  15. AtomPy: an open atomic-data curation environment

    Science.gov (United States)

    Bautista, Manuel; Mendoza, Claudio; Boswell, Josiah S; Ajoku, Chukwuemeka

    2014-06-01

    We present a cloud-computing environment for atomic data curation, networking among atomic data providers and users, teaching-and-learning, and interfacing with spectral modeling software. The system is based on Google-Drive Sheets, Pandas (Python Data Analysis Library) DataFrames, and IPython Notebooks for open community-driven curation of atomic data for scientific and technological applications. The atomic model for each ionic species is contained in a multi-sheet Google-Drive workbook, where the atomic parameters from all known public sources are progressively stored. Metadata (provenance, community discussion, etc.) accompanying every entry in the database are stored through Notebooks. Education tools on the physics of atomic processes as well as their relevance to plasma and spectral modeling are based on IPython Notebooks that integrate written material, images, videos, and active computer-tool workflows. Data processing workflows and collaborative software developments are encouraged and managed through the GitHub social network. Relevant issues this platform intends to address are: (i) data quality by allowing open access to both data producers and users in order to attain completeness, accuracy, consistency, provenance and currentness; (ii) comparisons of different datasets to facilitate accuracy assessment; (iii) downloading to local data structures (i.e. Pandas DataFrames) for further manipulation and analysis by prospective users; and (iv) data preservation by avoiding the discard of outdated sets.

  16. Atomic level analysis of biomolecules by the scanning atom probe

    International Nuclear Information System (INIS)

    Nishikawa, Osamu; Taniguchi, Masahiro; Ikai, Atsushi

    2009-01-01

    Utilizing the unique features of the scanning atom probe (SAP) the binding states of the biomolecules, leucine and methionine, are investigated at atomic level. The molecules are mass analyzed by detecting a single atom and/or clustering atoms field evaporated from a specimen surface. Since the field evaporation is a static process, the evaporated clustering atoms are closely related with the binding between atoms forming the molecules. For example, many thiophene radicals are detected when polythiophene is mass analyzed by the SAP. In the present study the specimens are prepared by immersing a micro cotton ball of single walled carbon nanotubes (SWCNT) in the leucine or methionine solution. The mass spectra obtained by analyzing the cotton balls exhibit singly and doubly ionized carbon ions of SWCNT and the characteristic fragments of the molecules, CH 3 , CHCH 3 , C 4 H 7 , CHNH 2 and COOH for leucine and CH 3 , SCH 3 , C 2 H 4 , C 4 H 7 , CHNH 2 and COOH for methionine.

  17. Mechanism of yttrium atom formation in electrothermal atomization from metallic and metal-carbide surfaces of a heated graphite atomizer in atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Wahab, H.S.; Chakrabarti, C.L.

    1981-01-01

    Mechanism of Y atom formation from pyrocoated graphite, tantalum and tungsten metal surfaces of a graphite tube atomizer has been studied and a mechanism for the formation for Y atoms is proposed for the first time. (author)

  18. DIAGNÓSTICO DA ANEMIA INFECCIOSA EQÜINA - RELATO DE UM CASO OCORRIDO EM GOIÁS DIAGNOSIS OF INFECTIOUS EQUINE ANEMIA IN A CASE OCCURRED IN GOIÁS, BRAZIL

    Directory of Open Access Journals (Sweden)

    Lourival Pereira Nunes

    2007-09-01

    Full Text Available

    Trata o presente trabalho do primeiro caso diagnosticado de Anemia Infecciosa Eqüina, ocorrida em Goiás. O diagnóstico foi estabelecido com base em exames clínicos, laboratoriais e prova de inoculação.

    This paper presents the first diagnosis in Equine infectious Anemia in Goiás State — Brazil. The diagnosis was made after clinical and laboratorial examinations and inoculation test.

  19. Influence of nitrogen on the growth and the properties of InAs quantum dots; Einfluss von Stickstoff auf das Wachstum und die Eigenschaften von InAs-Quantenpunkten

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, O.

    2004-11-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  20. Neutral atom traps of radioactives

    International Nuclear Information System (INIS)

    Behr, J.A.

    2003-01-01

    Neutral atoms trapped with modern laser cooling techniques offer the promise of improving several broad classes of experiments with radioactive isotopes. In nuclear β decay, neutrino spectroscopy from beta-recoil coincidences, along with highly polarized samples, enable experiments to search for non-Standard Model interactions, test whether parity symmetry is maximally violated, and search for new sources of time reversal violation. Ongoing efforts at TRIUMF, Los Alamos and Berkeley will be highlighted. The traps also offer bright sources for Doppler-free spectroscopy, particularly in high-Z atoms where precision measurements could measure the strength of weak neutral nucleon-nucleon and electron-nucleon interactions. Physics with francium atoms has been vigorously pursued at Stony Brook. Several facilities plan work with radioactive atom traps; concrete plans and efforts at KVI Groningen and Legnaro will be among those summarized. Contributions to the multidisciplinary field of trace analysis will be left up to other presenters

  1. Neutral atom traps of radioactives

    CERN Document Server

    Behr, J A

    2003-01-01

    Neutral atoms trapped with modern laser cooling techniques offer the promise of improving several broad classes of experiments with radioactive isotopes. In nuclear beta decay, neutrino spectroscopy from beta-recoil coincidences, along with highly polarized samples, enable experiments to search for non-Standard Model interactions, test whether parity symmetry is maximally violated, and search for new sources of time reversal violation. Ongoing efforts at TRIUMF, Los Alamos and Berkeley will be highlighted. The traps also offer bright sources for Doppler-free spectroscopy, particularly in high-Z atoms where precision measurements could measure the strength of weak neutral nucleon-nucleon and electron-nucleon interactions. Physics with francium atoms has been vigorously pursued at Stony Brook. Several facilities plan work with radioactive atom traps; concrete plans and efforts at KVI Groningen and Legnaro will be among those summarized. Contributions to the multidisciplinary field of trace analysis will be left...

  2. Dependency Ordering of Atomic Observables

    Science.gov (United States)

    Cīrulis, Jānis

    2015-12-01

    The notion of atomic observable was introduced by S.Gudder for effect test spaces in 1997. In this paper an observable is a σ-homomorphism from the Borel algebra on a line to some logic. Roughly, an observable on a logic is atomic, if it is completely determined by its restriction to one-element subsets of its point spectrum. In particular, every discrete observable is atomic. We study some elementary properties of such observables, and discuss a possible notion of functional dependency between them. Algebraically, a dependency is a certain preorder relation on the set of all atomic observables, which induces an order relation on the set of all maximal orthogonal subsets of the logic. Several properties, as well as characteristics in terms of the underlying logic, of these relations are stated.

  3. Scattering of highly excited atoms

    International Nuclear Information System (INIS)

    Raith, W.

    1980-01-01

    Experimental methods to excite atomic beams into Rydberg states and the first results of collision experiments with such beams are reported. For further information see hints under relevant topics. (orig.) [de

  4. Quantum Repeaters and Atomic Ensembles

    DEFF Research Database (Denmark)

    Borregaard, Johannes

    a previous protocol, thereby enabling fast local processing, which greatly enhances the distribution rate. We then move on to describe our work on improving the stability of atomic clocks using entanglement. Entanglement can potentially push the stability of atomic clocks to the so-called Heisenberg limit...... and allows for near-Heisenberg limited stability of atomic clocks. Furthermore, we describe how the operation of a clock can be altered to gain an exponential improvement of the stability even without entanglement. In the next part of the thesis, we describe our work on a novel type of heralded quantum gates...... temperature quantum memories and single photon sources. We have introduced a novel concept of motional averaging, which can be used in room-temperature systems, where fluctuations due to thermal motion is an issue. In particular, we have considered a system based on microcells filled with Cs-atoms, which can...

  5. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  6. High-energy atomic physics

    CERN Document Server

    Drukarev, Evgeny G

    2016-01-01

    This self-contained text introduces readers to the field of high-energy atomic physics - a new regime of photon-atom interactions in which the photon energies significantly exceed the atomic or molecular binding energies, and which opened up with the recent advent of new synchrotron sources. From a theoretical point of view, a small-parameter characteristic of the bound system emerged, making it possible to perform analytic perturbative calculations that can in turn serve as benchmarks for more powerful numerical computations. The first part of the book introduces readers to the foundations of this new regime and its theoretical treatment. In particular, the validity of the small-parameter perturbation expansion and of the lowest-order approximation is critically reviewed. The following chapters then apply these insights to various atomic processes, such as photoionization as a many-body problem, dominant mechanisms for the production of ions at higher energies, Compton scattering and ionization accompanied b...

  7. Absorption properties of identical atoms

    International Nuclear Information System (INIS)

    Sancho, Pedro

    2013-01-01

    Emission rates and other optical properties of multi-particle systems in collective and entangled states differ from those in product ones. We show the existence of similar effects in the absorption probabilities for (anti)symmetrized states of two identical atoms. The effects strongly depend on the overlapping between the atoms and differ for bosons and fermions. We propose a viable experimental verification of these ideas. -- Highlights: •The absorption rates of a pair of identical atoms in product and (anti)symmetrized states are different. •The modifications of the optical properties are essentially determined by the overlapping between the atoms. •The absorption properties differ, in some cases, for bosons and fermions

  8. Studies of atomic motion and atomic diagnostics in optical lattices

    Science.gov (United States)

    Grondalski, John Paul

    2001-06-01

    We present a detailed theoretical and numerical study of polarization gradient cooling for alkali atoms with large ground state angular momenta (Fg >= 2) moving in a one dimensional (1D) lin⊥lin optical lattice in order to clarify the physical picture of laser cooling in steady- state. Using a basis of Wannier states we find that the semiclassical picture of laser cooling depends strongly on coherences between the Zeeman sublevels of the atomic ground state. We find that atoms with ground state angular momenta Fg = 2, tend to diffuse throughout the lattice, while atoms with higher ground state angular momentum tend to remain localized at specific lattice sites. In the far-off resonance case, the lattice is essentially dissipation free allowing for studies of quantum-state control. We examine the creation and manipulation of mesoscopic coherent superpositions of Cesium atoms in magneto-optical double-potential wells created by a far- off-resonance 1D lin-θ-lin lattice. A robust set of dynamically varied lattice parameters that lead to a tunneling situation. Tunneling oscillations computed numerically agree with experiment except for an observed decay in tunneling oscillations. We consider the addition of a time-periodic drive to the double-well system, for which certain parameters of the drive, it is possible to coherently suppress tunneling. When a small amount of noise is added to the system in the form of random periodic δ-function ``kicks'' the quantum interference is destroyed. However, increasing the strength of the noise appears to have a stabilizing effect on the coherent suppression of tunneling. High resolution spatial information about atomic samples trapped in optical lattices can be obtained directly without the use of external probe lasers which necessarily disturb the system and whose resolution is limited by the wavelength of the probe laser. We explore the use of first and second order same-time atomic spatial correlation functions as a

  9. Spin noise measurement with diamagnetic atoms

    International Nuclear Information System (INIS)

    Takeuchi, M.; Ichihara, S.; Takano, T.; Kumakura, M.; Takahashi, Y.

    2007-01-01

    We report the measurement of the atomic spin noise of the diamagnetic atom ytterbium (Yb). Yb has various merits for utilizing the quantum nature of the atomic spin ensemble compared with the paramagnetic atoms used in all previous experiments. From the magnitude of the noise level and dependence on the detuning, we concluded that we succeeded in the measurement of 171 Yb atomic spin noise in an atomic beam

  10. Atom beams split by gentle persuasion

    International Nuclear Information System (INIS)

    Pool, R.

    1994-01-01

    Two different research teams have taken a big step toward atom interferometry. They have succeeded in splitting atomic beams by using atoms in spin states that neither absorb nor reemit laser light. By proper adjustment of experimental conditions, atoms are changed from one spin state to another, without passing through the intermediary excited state. The atoms in essence absorb momentum from the laser photons, without absorption or emission of photons. The change in momentum deflects atoms in the proper spin state

  11. Muonic atoms with vacant electron shells

    International Nuclear Information System (INIS)

    Bacher, R.; Gotta, D.; Simons, L.M.; Missimer, J.; Mukhopadhyay, N.C.

    1985-01-01

    We show that the cascade in muonic atoms with Z<20 ejects sufficient atomic electrons to ionize an isolated muonic atom completely. In gases, the rates with which electrons refill the atomic shell can be accurately deduced from measured and calculated electron transfer cross sections. Thus, we can conclude that completely ionized muonic atoms can be prepared in gases, and that they remain isolated for long enough times at attainable pressures to facilitate studies of fundamental interactions in muonic atoms

  12. Copper atomic-scale transistors

    Directory of Open Access Journals (Sweden)

    Fangqing Xie

    2017-03-01

    Full Text Available We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4 in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate. The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (Ubias influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G0 (G0 = 2e2/h; with e being the electron charge, and h being Planck’s constant or 2G0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  13. Decoherence Spectroscopy for Atom Interferometry

    Directory of Open Access Journals (Sweden)

    Raisa Trubko

    2016-08-01

    Full Text Available Decoherence due to photon scattering in an atom interferometer was studied as a function of laser frequency near an atomic resonance. The resulting decoherence (contrast-loss spectra will be used to calibrate measurements of tune-out wavelengths that are made with the same apparatus. To support this goal, a theoretical model of decoherence spectroscopy is presented here along with experimental tests of this model.

  14. Photoionization of atoms and molecules

    International Nuclear Information System (INIS)

    Samson, J.A.R.

    1976-01-01

    A literature review on the present state of knowledge in photoionization is presented. Various experimental techniques that have been developed to study photoionization, such as fluorescence and photoelectron spectroscopy, mass spectroscopy, are examined. Various atoms and molecules were chosen to illustrate these techniques, specifically helium and xenon atoms and hydrogen molecules. Specialized photoionization such as in positive and negative ions, excited states, and free radicals is also treated. Absorption cross sections and ionization potentials are also discussed

  15. Chain formation of metal atoms

    DEFF Research Database (Denmark)

    Bahn, Sune Rastad; Jacobsen, Karsten Wedel

    2001-01-01

    The possibility of formation of single-atomic chains by manipulation of nanocontacts is studied for a selection of metals (Ni, Pd, Pt, Cu, Ag, Au). Molecular dynamics simulations show that the tendency for chain formation is strongest for Au and Pt. Density functional theory calculations indicate...... that the metals which form chains exhibit pronounced many-atom interactions with strong bonding in low coordinated systems....

  16. Atom diffraction reveals the impact of atomic core electrons on atom-surface potentials.

    Science.gov (United States)

    Lonij, Vincent P A; Klauss, Catherine E; Holmgren, William F; Cronin, Alexander D

    2010-12-03

    We measured ratios of van der Waals potential coefficients (C3) for different atoms (Li, Na, K, and Rb) interacting with the same surface by studying atom diffraction from a nanograting. These measurements are a sensitive test of atomic structure calculations because C3 ratios are strongly influenced by core electrons and only weakly influenced by the permittivity and geometry of the surface. Our measurement uncertainty of 2% in the ratio C(3)(K)/C(3)(Na) is close to the uncertainty of the best theoretical predictions, and some of these predictions are inconsistent with our measurement.

  17. Visions of Atomic Scale Tomography

    International Nuclear Information System (INIS)

    Kelly, T.F.; Miller, Michael K.; Rajan, Krishna; Ringer, S.P.

    2012-01-01

    A microscope, by definition, provides structural and analytical information about objects that are too small to see with the unaided eye. From the very first microscope, efforts to improve its capabilities and push them to ever-finer length scales have been pursued. In this context, it would seem that the concept of an ultimate microscope would have received much attention by now; but has it really ever been defined? Human knowledge extends to structures on a scale much finer than atoms, so it might seem that a proton-scale microscope or a quark-scale microscope would be the ultimate. However, we argue that an atomic-scale microscope is the ultimate for the following reason: the smallest building block for either synthetic structures or natural structures is the atom. Indeed, humans and nature both engineer structures with atoms, not quarks. So far as we know, all building blocks (atoms) of a given type are identical; it is the assembly of the building blocks that makes a useful structure. Thus, would a microscope that determines the position and identity of every atom in a structure with high precision and for large volumes be the ultimate microscope? We argue, yes. In this article, we consider how it could be built, and we ponder the answer to the equally important follow-on questions: who would care if it is built, and what could be achieved with it?

  18. Transition from LEDCOP to ATOMIC

    International Nuclear Information System (INIS)

    Magee, N.H.; Abdallah, J.; Colgan, J.; Hakel, P.; Kilcrease, D.P.; Mazevet, S.; Sherrill, M.E.; Fontes, C.J.; Zhang, H.

    2004-01-01

    This paper discusses the development of the ATOMIC code, a new low to mid Z opacity code, which will replace the current Los Alamos low Z opacity code LEDCOP. The ATOMIC code is based on the FINE code, long used by the Los Alamos group for spectral comparisons in local thermodynamic equilibrium (LTE) and for non-LTE calculations, both utilizing the extensive databases from the atomic physics suite of codes based on the work of R.D. Cowan. Many of the plasma physics packages in LEDCOP, such as line broadening and free-free absorption, are being transferred to the new ATOMIC code. A new equation of state (EOS) model is being developed to allow higher density calculations than were possible with either the FINE or LEDCOP codes. Extensive modernization for both ATOMIC and the atomic physics code suites, including conversion to Fortran 90 and parallelization, are underway to speed up the calculations and to allow the use of expanded databases for both the LTE opacity tables and the non-LTE calculations. Future plans for the code will be outlined, including considerations for new generation opacity tables.

  19. Epitaxy: Programmable Atom Equivalents Versus Atoms

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Mary X.; Seo, Soyoung E.; Gabrys, Paul A. [Department; Fleischman, Dagny [Thomas; Lee, Byeongdu [X-ray Science; Kim, Youngeun; Atwater, Harry A. [Thomas; Macfarlane, Robert J. [Department; Mirkin, Chad A.

    2016-12-05

    The programmability of DNA makes it an attractive structure-directing ligand for the assembly of nanoparticle superlattices in a manner that mimics many aspects of atomic crystallization. However, the synthesis of multilayer single crystals of defined size remains a challenge. Though previous studies considered lattice mismatch as the major limiting factor for multilayer assembly, thin film growth depends on many interlinked variables. Here, a more comprehensive approach is taken to study fundamental elements, such as the growth temperature and the thermodynamics of interfacial energetics, to achieve epitaxial growth of nanoparticle thin films. Under optimized equilibrium conditions, single crystal, multilayer thin films can be synthesized over 500 × 500 μm2 areas on lithographically patterned templates. Importantly, these superlattices follow the same patterns of crystal growth demonstrated in thin film atomic deposition, allowing for these processes to be understood in the context of well-studied atomic epitaxy, and potentially enabling a nanoscale model to study fundamental crystallization processes.

  20. Quantum Phases of Atom-Molecule Mixtures of Fermionic Atoms

    Science.gov (United States)

    Lopez, Nicolas; Tsai, Shan-Wen

    2009-11-01

    Cold atom experiments have observed atom-molecule mixtures by tuning the interactions between particles.footnotetextM.L. Olsen, J. D. Perreault, T. D. Cumby, and D. S. Jin, Phys. Rev. A 80, 030701(R) (2009) We study many particle interactions by examaning a simple model that describes the destruction of fermionic atom pairs to form single bosonic molecules and vice versa. A set of functional Renomalization Group equationsfootnotetextR. Shankar, Rev. Mod. Phys., Vol 66 No. 1, January 1994^,footnotetextS.W. Tsai, A.H. Castro Neto, R. Shankar, D.K. Campbell, Phys. Rev. B 72, 054531 (2005) describing these processes are set up and solved numerically. The Self Energy of the fermions are attained as a function of frequency and we search for frequency dependent instabilities that could denote a transition from a disordered liquid to a BCS phase. (Financial support from NSF DMR-084781 and UC-Lab Fees Research Program.)