Auger recombination in p-type InAs and in Gasub(x)Insub(1-x)As solid solutions

International Nuclear Information System (INIS)

Zotova, N.V.; Yassievich, I.N.

1977-01-01

The probability of the Auger recombination in p-type semiconductors, which is accompanied by transition of the second hole into the zone, splitted by spin-orbital interaction, was calculated. The above process is effective when the energy of spin-orbital splitting off Δ is close to the forbidden zone energy Esub(g), which takes place in the case of InAs, GaSb and solid solutions based on these compounds. The calculation is performed for the non-degenerate hole gas at a finite difference of Esub(g) - Δ. By means of the study of radiative recombination in InAs and Gasub(x)Insub(1-x)As solid solutions with small contents of GaAs (0 17 cm -3 . It is found that the quantum yield of radiative recombination increases sharply in Gasub(x)Insub(1-x)As solid solutions with the increase of x, which is associated with the increase of the difference of Esub(g) - Δ; the radiative recombination intensity increases in correspondence with the theoretical calculation made

Effect of In_xGa_1_−_xAs interlayer on the properties of In_0_._3Ga_0_._7As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Gao, Fangliang; Wen, Lei; Zhang, Shuguang; Li, Jingling; Zhang, Xiaona; Li, Guoqiang; Liu, Ying

2015-01-01

High-quality In_0_._3Ga_0_._7As films have been epitaxially grown on Si (111) substrate by inserting an In_xGa_1_−_xAs interlayer with various In compositions by molecular beam epitaxy. The effect of In_xGa_1_−_xAs interlayer on the surface morphology and structural properties of In_0_._3Ga_0_._7As films is studied in detail. It reveals that In_0_._3Ga_0_._7As films grown at appropriate In composition in In_xGa_1_−_xAs interlayer exhibit smooth surface with a surface root-mean-square roughness of 1.7 nm; while In_0_._3Ga_0_._7As films grown at different In composition of In_xGa_1_−_xAs interlayer show poorer properties. This work demonstrates a simple but effective method to grow high-quality In_0_._3Ga_0_._7As epilayers on Si substrates, and brings up a broad prospect for the application of InGaAs-based optoelectronic devices on Si substrates. - Highlights: • We provide a simple approach to achieve high-quality In_0_._3Ga_0_._7As films on Si. • An In_0_._2_8Ga_0_._7_2As interlayer can release mismatch strain. • High-quality In_0_._3Ga_0_._7As film is grown on Si using 10-nm-thick interlayer. • Smooth surface In_0_._3Ga_0_._7As film is grown on Si using 10-nm-thick interlayer.

Hydrostatic-pressure-induced GAMMA-X mixing in delta-doped Al{sub x}Ga{sub 1-x}As

Energy Technology Data Exchange (ETDEWEB)

Mora-Ramos, M E [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico); Duque, C A, E-mail: memora@buzon.uaem.m [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)

2009-05-01

The mixing between GAMMA and X points in the conduction band is known to manifest in GaAs/Al{sub x}Ga{sub 1-x}As heterostructures. Application of hydrostatic pressure leads to the variation of both the GAMMA- and X-energy gaps in such a way that around P = 39 kbar, the GaAs becomes an indirect gap one. Within a narrow interval of P around this value, both minima remain almost energetically aligned. Therefore, it can be expected that some kind of mixing between the states corresponding to the delta-quantum-wells formed at those points should manifest. In this work, we investigate the occurrence of GAMMA-X mixing induced by the application of hydrostatic pressure in n-type delta doped Al{sub x}Ga{sub 1-x}As, by means of a variational scheme that uses a 2x2 Hamiltonian with the off-diagonal element being a variational potential energy. Diagonal Schroedinger-like effective mass elements are written with potential functions given by the Thomas-Fermi approximation. The effect of the hydrostatic pressure is incorporated via the dependence on P of the different input parameters in the system: energy gaps, effective masses and dielectric constant. We report the variation of the ground state of the system as a function of P.

Gap bowing in Inx Ga1-x N and Inx Al1-x N under pressure

DEFF Research Database (Denmark)

Gorczyca, I.; Suski, T.; Christensen, Niels Egede

2009-01-01

The electronic band structures of InxGa1-xN and InxAl1-xN alloys are calculated by ab-initio methods in a supercell geometry, and the effects of varying the composition and applying external pressure examined. Indium segregation is also simulated, and it is shown that it strongly influences the b...... the band gap and its pressure derivative. Both the band gaps and their pressure coefficients are considerably lower when In atoms are clustered, than when they are uniformly distributed.......The electronic band structures of InxGa1-xN and InxAl1-xN alloys are calculated by ab-initio methods in a supercell geometry, and the effects of varying the composition and applying external pressure examined. Indium segregation is also simulated, and it is shown that it strongly influences...

Electronic structures of GaAs/AlxGa1-xAs quantum double rings

Directory of Open Access Journals (Sweden)

Li Shu-Shen

2006-01-01

Full Text Available AbstractIn the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

Phonon-Assisted Modulation of the Electron Collection Efficiency into InxGa1-xAs/GaAs Quantum Wells

DEFF Research Database (Denmark)

Borri, Paola; Gurioli, M.; Colocci, M.

1997-01-01

The energy relaxation and the capture of free carriers in InxGa1-xAs/GaAs quantum wells have been investigated by means of continuous-wave and time-resolved photoluminescence for excitation energies tuned over a wide interval above the GaAs band-gap. The strong interaction between free electrons...

Acoustic phonon dephasing in shallow GaAs/Ga 1- xAl xAs single quantum wells

Science.gov (United States)

Cassabois, G.; Meccherini, S.; Roussignol, Ph.; Bogani, F.; Gurioli, M.; Colocci, M.; Planel, R.; Thierry-Mieg, V.

1998-07-01

The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga 1- xAl xAs single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements ( T2) of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.

Some properties of Ga-As-Alsub(x)Gasub(1-x)As heterojunction grown by low temperature liquid phase epitaxy

International Nuclear Information System (INIS)

Yu Lisheng; Liu Hongxun; Zhang Bei; Wang Shumin

1986-03-01

GaAs-Alsub(x)Gasub(1-x)As heterojunction was grown by liquid phase epitaxy at low growth temperature 650-700 deg. C. The series resistance of heterojunction with DH laser structure was measured. Doping properties of Mg in GaAs and Alsub(x)Gasub(1-x)As were investigated. It is found that impurity concentration of Mg as high as 10 18 cm -3 can be doped easily. The Shubnikov-de-Haas oscillation was observed in GaAs-N Alsub(0.35)Gasub(0.65)As heterointerface. It is demonstrated that in these heterointerfaces there exists 2DEG with some contribution from 3D electron of N-AlGaAs layer. (author)

Coherent-potential approximation for vibrations in Ga/sub 1-x/In/sub x/Sb and Ga/sub 1-x/In/sub x/As mixed crystals

International Nuclear Information System (INIS)

Kleinert, P.

1982-01-01

The vibrational properties of the mixed crystals Ga/sub 1-x/In/sub x/As and Ga/sub 1-x/In/sub x/Sb are investigated using the coherent-potential approximation (CPA). These III-V systems switch from one-mode to two-mode behaviour as the composition is changed. Results are obtained for a one-dimensional model including self-consistently mass defects and force constant changes. The calculated density of states and the dielectric susceptibility are compared with results of the mass CPA. In addition, a three-dimensional CPA Bethe lattice treatment is carried out to calculate the optical properties of these disordered systems showing mixed-mode behaviour. The force-constant change is included by a virtual-crystal interpolation. The theory explains the mode switching behaviour and agrees fairly well with experimental peak positions and line shapes of the response function. (author)

Coherent dynamics of interwell excitons in GaAs/AlxGa1-xAs superlattices

DEFF Research Database (Denmark)

Mizeikis, V.; Birkedal, Dan; Langbein, Wolfgang Werner

1997-01-01

Coherent exciton dynamics in a GaAs/AlxGa1-xAs narrow-miniband superlattice is studied by spectrally resolved transient four-wave mixing. Coherent optical properties of the investigated structure are found to be strongly affected by the existence of two different heavy-hole excitonic states. One...

Spin excitation and band-narrowing in Al{sub x}Ga{sub 1-x}As heterostructures

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2010-11-01

We studied the spin excitation in dependences of the applied electric field and lattice temperature (LT) via the measurements of the circularly polarized photoluminescence (CPPL) in Al{sub x}Ga{sub 1-x}As heterostructures (HSs). The intensity of CPPL was found to strongly depend on the electric field applied to the HSs. The CPPL was also found to enhance with decreasing LT. It was demonstrated that the observed LT dependence might be due to the LT-dependent band-gap shift of the HS materials.

Photoluminescence measurements of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As

International Nuclear Information System (INIS)

Furtado, M.T.; Weid, J.P. von der.

1984-01-01

The photoluminescence of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As, with x=0.30-0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with (h/2π)ω sub(q) approx. 35 + - 2 meV and (h/2π) ω sub(q) approx. 45 + - 2 meV are found for the optical band, yielding a zero phonon transition energy - 1.73 + - 0.02 eV and a Franck-Condon shift approx. 0.17-0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17 + - 0.04 eV. Possible mechanisms for the radiative transitions are discussed. (Author) [pt

InxGa1-xAs obtained from independent target via co-sputtering deposition

International Nuclear Information System (INIS)

Bernal-Correa, R; Torres-Jaramillo, S.; Pulzara-Mora, C.

2017-01-01

This paper is focused on the preparation of InGaAs thin films on GaAs substrates by r.f. magnetron sputtering technique, using the sputtering power as control means for the formation of different stoichiometries. Results of X-ray and Raman spectroscopy allowed corroborating the formation of In x Ga 1-x As in different concentrations, identifying peaks associated with crystallographic planes (X-rays) and characteristic vibrational phonon modes (Raman). An analysis performed with the Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS) techniques, allowed discussing on the composition in each of the layers. Finally, an alternative in obtaining the ternary semiconductor with polycrystalline structure and preferential growth along the direction (111) was demonstrated and generated by a technique different from the epitaxial techniques, which are commonly used for the growth of III-V semiconductors. (paper)

Semiclassical three-valley Monte Carlo simulation analysis of steady-state and transient electron transport within bulk InAsxP1-x, InAs and InP

Directory of Open Access Journals (Sweden)

Hadi Arabshahi

2010-04-01

Full Text Available We have studied how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk zincblende InAsxP1-x, InAs and InP. Calculations are made using a non-parabolic effective-mass energy band model. Monte Carlo simulation includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimised pseudo-potential band calculations to ensure excellent agreement with experimental information and ab-initio band models. The effects of alloy scattering on the electron transport physics are examined. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field-effect transistor. The electron drift velocity relaxes to the saturation value of about 1.5105 ms-1 within 4 pico-seconds for all crystal structures. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

A solid-state NMR and DFT study of compositional modulations in AlxGa1-xAs

NARCIS (Netherlands)

Knijn, Paulus J.; Bentum, P. Jan M. van; Eck, Ernst R.H. van; Fang, Changming; Grimminck, Dennis L.A.G.; Groot, Robert A. de; Havenith, Remco W.A.; Marsman, Martijn; Meerts, W. Leo; Wijs, Gilles A. de; Kentgens, Arno P.M.

2010-01-01

We have conducted 75As and 69Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1-xAs lift-off films with x ~ 0.297 and 0.489. We were able to identify all possible As(AlnGa4-n) sites with n = 0–4 coordinations in 75As NMR spectra using spin-echo experiments at

Tilted magnetic field quantum magnetotransport in the double quantum well with a sizable bulk g-factor: InxGa1-xAs/GaAs

NARCIS (Netherlands)

Yakunin, M.V.; Galistu, G.; de Visser, A.

2008-01-01

Rich patterns of transformations in the structure of quantum Hall (QH) effect and magnetoresistivity under tilted magnetic fields were obtained in the InxGa1-xAs/GaAs double quantum well at mK temperatures. Local features correspond to the calculated intersections of Landau levels from different

Spontaneous core–shell elemental distribution in In-rich In(x)Ga1-xN nanowires grown by molecular beam epitaxy.

Science.gov (United States)

Gómez-Gómez, M; Garro, N; Segura-Ruiz, J; Martinez-Criado, G; Cantarero, A; Mengistu, H T; García-Cristóbal, A; Murcia-Mascarós, S; Denker, C; Malindretos, J; Rizzi, A

2014-02-21

The elemental distribution of self-organized In-rich In(x)Ga1-xN nanowires grown by plasma-assisted molecular beam epitaxy has been investigated using three different techniques with spatial resolution on the nanoscale. Two-dimensional images and elemental profiles of single nanowires obtained by x-ray fluorescence and energy-dispersive x-ray spectroscopy, respectively, have revealed a radial gradient in the alloy composition of each individual nanowire. The spectral selectivity of resonant Raman scattering has been used to enhance the signal from very small volumes with different elemental composition within single nanowires. The combination of the three techniques has provided sufficient sensitivity and spatial resolution to prove the spontaneous formation of a core–shell nanowire and to quantify the thicknesses and alloy compositions of the core and shell regions. A theoretical model based on continuum elastic theory has been used to estimate the strain fields present in such inhomogeneous nanowires. These results suggest new strategies for achieving high quality nonpolar heterostructures.

Electroluminescence in quantum well heterostructures p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As under uniaxial stress

Energy Technology Data Exchange (ETDEWEB)

Berman, Irina V. [Physics Department, San Jose State University, CA (United States); Bogdanov, Evgeniy V.; Minina, Natalia Ya.; Shirokov, Stanislav S.; Yunovich, Alexander E. [Physics Department, Lomonosov Moscow State University (Russian Federation); Kissel, Heiko [R and D Department, DILAS Diodenlaser GmbH, (Germany)

2009-03-15

We present new results on the influence of uniaxial stress up to P=4 kbar on the electroluminescence spectra and current-voltage characteristics of p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As double heterostructures usually used in TM emitting 808 nm high-power diode lasers. With increasing stress, the emission spectra demonstrate a blue shift of up to 25 meV at a pressure of P=4 kbar, while the electroluminescence intensity increases under compression. The different behavior of the current-voltage characteristics under uniaxial stress along[110] and[1 anti 10] directions is mainly determined by the arising piezoelectric field. The results are also discussed in terms of changes in the band structure under uniaxial compression. The construction of the cryostat for optical measurements under uniaxial stress at liquid nitrogen temperature is described in the paper. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Micro-hardness of InxGa(1-x)As superlattices. 'The Frogley conjecture'

International Nuclear Information System (INIS)

Jayaweera, N.B.

2000-01-01

Coherently strained In x Ga (1-x) As superlattices with alternating layers of opposite strain have been grown on InP substrates using Molecular Beam Epitaxy. Control of the layer strains is achieved by varying the indium composition and the structures are characterized using high-resolution x-ray diffraction. An optimized mathematical treatment of high-resolution x-ray data is presented for the determination of strain, composition and tilt of epitaxial strained layers. This analysis also provides guidance as to the best sets of reflections to measure. The method is applied explicitly to reciprocal space mapping, where errors are normally different in different reciprocal space directions, and compare results from rocking curve and reciprocal space analysis. Results are reported on the onset of plasticity in semiconductor strained layer superlattices, using nanoindentation with spherical indenters to observe the full stress-strain curve. The yield pressure is reduced by as much as a factor of two by the presence of the coherency strain. Varying the thicknesses and strains of the layers enables us to show that both sets of layers, compressive and tensile, reduce the yield pressure. This requires that a yield criterion must be satisfied over a finite volume, large enough to include layers of both signs. It is shown that the relevant yield criterion for our experimental data is the rate of change of elastic strain energy with plastic relaxation, integrated over a volume of the order of a micron across. In these studies, we have observed a large and reproducible size effect in the yield pressure and we show how the requirement of meeting a yield criterion over a finite volume naturally leads to the size effect. A theoretical analysis is given and quantative agreement with experiment is obtained. This is a crucial result for the understanding of nanoindentation and other systems in which stresses are highly inhomogeneous on a small scale. The result also has implications

Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

Science.gov (United States)

Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

2018-09-01

We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

Phase diagram of a two-dimensional liquid in GaAs/AlxGa1-xAs biased double quantum wells

DEFF Research Database (Denmark)

Timofeev, V. B.; Larionov, A. V.; Alessi, M. G.

2000-01-01

Photoluminescence (PL) and PL excitation (PLE) measurements have been performed in GaAs/AlxGa1-xAs biased double quantum well heterostructures. The recombination of electrons, e, with holes, h, located in the same or in two adjacent wells, has been investigated for different exciting power...

Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy

Science.gov (United States)

Gómez-Gómez, M.; Garro, N.; Segura-Ruiz, J.; Martinez-Criado, G.; Cantarero, A.; Mengistu, H. T.; García-Cristóbal, A.; Murcia-Mascarós, S.; Denker, C.; Malindretos, J.; Rizzi, A.

2014-02-01

The elemental distribution of self-organized In-rich InxGa1-xN nanowires grown by plasma-assisted molecular beam epitaxy has been investigated using three different techniques with spatial resolution on the nanoscale. Two-dimensional images and elemental profiles of single nanowires obtained by x-ray fluorescence and energy-dispersive x-ray spectroscopy, respectively, have revealed a radial gradient in the alloy composition of each individual nanowire. The spectral selectivity of resonant Raman scattering has been used to enhance the signal from very small volumes with different elemental composition within single nanowires. The combination of the three techniques has provided sufficient sensitivity and spatial resolution to prove the spontaneous formation of a core-shell nanowire and to quantify the thicknesses and alloy compositions of the core and shell regions. A theoretical model based on continuum elastic theory has been used to estimate the strain fields present in such inhomogeneous nanowires. These results suggest new strategies for achieving high quality non-polar heterostructures.

Direct measurement of DX-centre related lattice relaxations in Al$_{x}$Ga$_{1-x}$As compounds

CERN Multimedia

2002-01-01

Donor impurities from elements of group IV and VI form localized electronic states, so-called DX-centers, in AlGaAs and other semiconductors. One of the well known effects related to DX-centers is the persistent photoconductivity. In spite of extensive studies, the microscopic structure of the DX-center is still a matter of controversy. The direct determination of the donor lattice sites and their microscopical surrounding is a crucial point in understanding the relation of microscopic structure to the localized electronic state of the DX-center.\\\\ It is proposed to implant radioactive group VI elements $^{73}$Se (from $^{73}$Br) and $^{118}$Te (from $^{118}$Xe) into Al$_{x}$Ga$_{1-x}$As of different mole fractions ${x}$ and to determine (i) the lattice site of Te and Se impurities by emission channeling of decay positrons and electrons (ii) the local structure of Se impurities using the perturbed $\\gamma$-$\\gamma$-angular correlation technique (PAC). The appearance of the DX-center shall be check...

Density Functional Theory Calculation of the Band Alignment of (101̅0) In(x)Ga(1-x)N/Water Interfaces.

Science.gov (United States)

Meng, Andrew C; Cheng, Jun; Sprik, Michiel

2016-03-03

Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47%. The band gap was found to exceed 2 eV for an In fraction less than 54%.

ENERGÍA DE ENLACE DE EXCITONES EN POZOS CUÁNTICOS DE GaAs/Ga1-xAl xAs

Directory of Open Access Journals (Sweden)

Parménides Aristizábal

2007-06-01

Full Text Available El uso de las estructuras de baja dimensionalidad es un elemento tecnológico clave en la creación de nuevos dispositivos cuánticos funcionales de la siguiente generación de circuitos integrados electrónicos, fotónicos y espintrónicos y muchos otros dispositivos nanotecnológicos que son necesarios para la sociedad de la información del siglo XXI. Una de las propiedades ópticas más importante es la fotoluminiscencia producida por agentes tales como impurezas y excitones en pozos, hilos y puntos cuánticos de arseniuro de galio GaAs con dimensiones nanométricas bajo la influencia de campos eléctricos y magnéticos y presiones externas. Se presenta la energía de enlace para los tres primeros estados excitónicos en pozos cuánticos de GaAs/Ga1-xAl xAs describiendo el sistema por medio de la teoría cuántica, en la aproximación de masa efectiva y usando el método variacional.The use of low dimensional structures is a key technological element in the creation of new quantum functional devices in the development of the next generation of the electronic, photonic, and spintronic integrated circuits and many other nanoscaled devices that are necessary for the information society of 21st century. One of the most important optical properties is the photoluminescence produced by agents as impurities and excitons in GaAs quantum wells, wires, and dots with nanometric dimensions under the influence of electric and magnetic fields and external pressures. The binding energy for the first three excitonic states in GaAs/Ga1-xA1xAs quantum wells describing the system through quantum theory in the effective mass approximation and using the variational method is presented.

Optimization of the confinement energy of quantum-wire states in T-shaped GaAs/AlxGa1-xAs structures

DEFF Research Database (Denmark)

Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher

1996-01-01

We report on an optimization of the wire confinement energies of the confined electronic states at the T-shaped intersection of GaAs and AlxGa1-xAs quantum wells. These structures can be produced by the cleaved edge overgrowth technique. We present an analytical model for the confinement to give ...

Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion

International Nuclear Information System (INIS)

Djie, H. S.; Wang, D.-N.; Ooi, B. S.; Hwang, J. C. M.; Gunawan, O.

2006-01-01

The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H m for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-well materials confirming the role of SiO 2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots

Donor impurity-related optical absorption spectra in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells: hydrostatic pressure and {gamma}-X conduction band mixing effects

Energy Technology Data Exchange (ETDEWEB)

Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca, MOR (Mexico); Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain); Lopez, S.Y. [Fac. de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Duque, C.A. [Inst. de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Velasco, V.R. [Inst. de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

2007-07-01

Using a variational procedure within the effective mass approximation, the mixing between the {gamma} and X conduction band valleys in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

Directory of Open Access Journals (Sweden)

Qi Wang

2013-07-01

Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research and device applications

Science.gov (United States)

Adachi, Sadao

1985-08-01

The AlxGa1-xAs/GaAs heterostructure system is potentially useful material for high-speed digital, high-frequency microwave, and electro-optic device applications. Even though the basic AlxGa1-xAs/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters. Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J. S. Blakemore, J. Appl. Phys. 53, R123 (1982)]. The purpose of this review is (i) to obtain and clarify all the various material parameters of AlxGa1-xAs alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications. A complete set of material parameters are considered in this review for GaAs, AlAs, and AlxGa1-xAs alloys. The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs). The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic-band structure, (7) external perturbation effects on the band-gap energy, (8) effective mass, (9) deformation potential, (10) static and high-frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Fröhlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties. Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x. Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant

Electrical conductivity studies in (Ag3AsS3)x(As2S3)1-x superionic glasses and composites

Science.gov (United States)

Studenyak, I. P.; Neimet, Yu. Yu.; Kranjčec, M.; Solomon, A. M.; Orliukas, A. F.; Kežionis, A.; Kazakevičius, E.; Šalkus, T.

2014-01-01

Compositional, frequency, and temperature studies of impedance and electrical conductivity in (Ag3AsS3)x(As2S3)1-x superionic glasses and composites were performed. Frequency range from 10 Hz to 3 × 109 Hz and temperature interval 300-400 K were used for the measurements. Compositional dependences of electrical conductivity and activation energy are analyzed; the most substantial changes are observed with the transition from (Ag3AsS3)0.4(As2S3)0.6 glass to (Ag3AsS3)0.5(As2S3)0.5 composite. With increase of Ag3AsS3 content, the investigated materials are found to have crystalline inclusions and show the two-phase composite nature. Addition of Ag3AsS3 leads to the increase of electrical conductivity whereas the activation energy decreases.

Hydrostatic-pressure effects on the correlated electron-hole transition energies in GaAs-Ga{sub 1-x}Al{sub x}As semiconductor quantum wells

Energy Technology Data Exchange (ETDEWEB)

Raigoza, N. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Instituto de Fisica, Unicamp, CP 6165, Campinas, Sao Paulo, 13083-970 (Brazil); Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Reyes-Gomez, E. [Dept. of Theor. Physics, Univ. of Havana, San Lazaro y L, Vedado 10400, Havana (Cuba); Instituto de Fisica, Unicamp, CP 6165, Campinas, Sao Paulo, 13083-970 (Brazil); Oliveira, L.E. [Instituto de Fisica, Unicamp, CP 6165, Campinas, Sao Paulo, 13083-970 (Brazil)

2006-03-01

The effects of hydrostatic pressure on the correlated e-h transition energies in single GaAs-Ga{sub 1-x}Al{sub x}As quantum wells are calculated via a variational procedure, in the framework of the effective-mass and non-degenerate parabolic-band approximations. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. Both heavy- and light-hole exciton energies are obtained, and correlated e-h transition energies are found in good agreement with available experimental measurements. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films

Science.gov (United States)

Prozheeva, V.; Hölldobler, R.; von Wenckstern, H.; Grundmann, M.; Tuomisto, F.

2018-03-01

Various nominally undoped and Si-doped (InxGa1-x)2O3 thin films were grown by pulsed laser deposition in a continuous composition spread mode on c-plane α-sapphire and (100)-oriented MgO substrates. Positron annihilation spectroscopy in the Doppler broadening mode was used as the primary characterisation technique in order to investigate the effect of alloy composition and dopant atoms on the formation of vacancy-type defects. In the undoped samples, we observe a Ga2O3-like trend for low indium concentrations changing to In2O3-like behaviour along with the increase in the indium fraction. Increasing indium concentration is found to suppress defect formation in the undoped samples at [In] > 70 at. %. Si doping leads to positron saturation trapping in VIn-like defects, suggesting a vacancy concentration of at least mid-1018 cm-3 independent of the indium content.

Interband Stark effects in InxGa1-xAs/InyAl1-yAs coupled step quantum wells

International Nuclear Information System (INIS)

Kim, J.H.; Kim, T.W.; Yoo, K.H.

2005-01-01

The effects of an electric field on the interband transitions in In x Ga 1-x As/In y Al 1-y As coupled step quantum wells have been investigated both experimentally and theoretically. A In x Ga 1-x As/In y Al 1-y As coupled step quantum well sample consisted of the two sets of a 50 Aa In 0.53 Ga 0.47 As shallow quantum well and a 50 Aa In 0.65 Ga 0.35 As deep step quantum well bounded by two thick In 0.52 Al 0.48 As barriers separated by a 30 Aa In 0.52 Al 0.48 As embedded potential barrier. The Stark shift of the interband transition energy in the In x Ga 1-x As/In y Al 1-y As coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In x Ga 1-x As/In y Al 1-y As coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In x Ga 1-x As/In y Al 1-y As coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers

Exciton confinement in strain-engineered metamorphic InAs/I nxG a1 -xAs quantum dots

Science.gov (United States)

Khattak, S. A.; Hayne, M.; Huang, J.; Vanacken, J.; Moshchalkov, V. V.; Seravalli, L.; Trevisi, G.; Frigeri, P.

2017-11-01

We report a comprehensive study of exciton confinement in self-assembled InAs quantum dots (QDs) in strain-engineered metamorphic I nxG a1 -xAs confining layers on GaAs using low-temperature magnetophotoluminescence. As the lattice mismatch (strain) between QDs and confining layers (CLs) increases from 4.8% to 5.7% the reduced mass of the exciton increases, but saturates at higher mismatches. At low QD-CL mismatch there is clear evidence of spillover of the exciton wave function due to small localization energies. This is suppressed as the In content x in the CLs decreases (mismatch and localization energy increasing). The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In content in the barrier is low (mismatch is high and localization energy is large). Finally, an anomalously small measured Bohr radius in samples with the highest x is attributed to a combination of thermalization due to low localization energy, and its enhancement with magnetic field, a mechanism which results in small dots in the ensemble dominating the measured Bohr radius.

Continuous room-temperature operation of GaAs-Al/sub x/Ga1/sub -//sub x/As double-heterostructure lasers prepared by molecular-beam epitaxy

International Nuclear Information System (INIS)

Cho, A.Y.; Dixon, R.W.; Casey, H.C. Jr.; Hartman, R.L.

1976-01-01

The continuous (cw) operation at temperatures as high as 100 0 C of stripe-geometry GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers fabricated by molecular-beam epitaxial (MBE) techniques has been achieved. Improved MBE laser performance was the result of the extensive efforts to eliminate hydrocarbon and water vapor from the growth apparatus. For 12-μm-wide stripe-geometry lasers with 380-μm-long cavities, the cw threshold currents varied between 163 and 297 mA at room temperature

Calculations of carrier localization in InxGa1-xN

International Nuclear Information System (INIS)

Wang, Lin-Wang

2001-01-01

The electronic structures of cubic InGaN systems are calculated using an atomistic empirical pseudopotential method. Two extreme cases are studied. One is a pure InN quantum dot embedded in a pure GaN matrix, another is a pure In x Ga 1-x N alloy without clustering. We find hole localizations in both cases. The hole wave function starts to be localized as soon as a few In atoms segregate to form a small cluster, while the electron wave function only becomes localized after the number of In atoms in the quantum dot becomes larger than 200. The hole state is also strongly localized in a pure In x Ga 1-x N alloy, on top of randomly formed (110) directioned In-N-In chains. Using one proposed model, we have calculated the hole energy fluctuation, and related that to photoluminescence linewidth. The calculated linewidth is about 100 meV, close to the experimental results. Wurtzite InGaN is also studied for optical anisotropies. We find that in both quantum dot and pure alloy, the polarization is in the xy plane perpendicular to the c axis of the wurtzite structure

Thermodynamics of InxGa1-xN MOVPE using x-dependent interaction parameter

International Nuclear Information System (INIS)

Moon, Won Ha; Kim, Changsung Sean; Choi, Chang Hwan

2007-01-01

Thermodynamic properties of In x Ga 1-x N MOVPE are investigated using x-dependent interaction parameter. The interaction parameter (Ω=-1.3435x+6.1607 (kcal/mol)) dependent on In composition is calculated using a molecular-mechanics method to investigate the phase stability of InGaN. This parameter is more reliable than that proposed until now. The phase diagram and critical temperature (1392 K at x=0.44) of In x Ga 1-x N are also obtained. With this interaction parameter, many thermodynamic characteristics of InGaN by the change of In composition, input V/III ratio, and input mol ratio of group III sources are calculated to predict the growth condition of InGaN. These results are in agreement with other data for InGaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

First-principles calculations of the structural, electronic and optical properties of cubic B{sub x}Ga{sub 1-x}As alloys

Energy Technology Data Exchange (ETDEWEB)

Guemou, M., E-mail: guemoumhamed7@gmail.com [Engineering Physics Laboratory, University Ibn Khaldoun of Tiaret, BP 78-Zaaroura, Tiaret 14000 (Algeria); Bouhafs, B. [Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000 Sidi Bel-Abbes (Algeria); Abdiche, A. [Applied Materials Laboratory, Research Center, University of Sidi Bel Abbes, 22000 Sidi Bel Abbes (Algeria); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria); Al Douri, Y. [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Perlis (Malaysia); Bin Omran, S. [Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

2012-04-15

Density functional calculations are performed to study the structural, electronic and optical properties of technologically important B{sub x}Ga{sub 1-x}As ternary alloys. The calculations are based on the total-energy calculations within the full-potential augmented plane-wave (FP-LAPW) method. For exchange-correlation potential, local density approximation (LDA) and the generalized gradient approximation (GGA) have been used. The structural properties, including lattice constants, bulk modulus and their pressure derivatives, are in very good agreement with the available experimental and theoretical data. The electronic band structure, density of states for the binary compounds and their ternary alloys are given. The dielectric function and the refractive index are also calculated using different models. The obtained results compare very well with previous calculations and experimental measurements.

Competitive growth mechanisms of InAs quantum dots on InxGa1-xAs layer during post growth interruption

International Nuclear Information System (INIS)

Yang, Changjae; Kim, Jungsub; Sim, Uk; Lee, Jaeyel; Choi, Won Jun; Yoon, Euijoon

2010-01-01

We investigated the effect of the post growth interruption (GI) on InAs quantum dots (QDs) grown on In x Ga 1-x As strained buffer layers (SBL). When QDs were grown on the 5 and 10% In content SBLs by using post GI, the size of QDs increased as its density decreased. Based on the 50 meV red-shift of PL in these cases, the transport of materials between QDs leads to the increase of QD size with maintaining its composition during the post GI. On the other hand, when using SBLs with the 15 and 20% In contents, the size of QDs increased, but its density was a little reduced. In addition, PL results were observed blue-shifted by about 20 meV and 2 meV, respectively. Considering the interruption of source gases during the post GI, these observations are strong evidence of the Ga incorporation from 15 and 20% In content SBLs. Therefore, these results imply that the dominant mechanism which increases the size of QDs during the post GI depends on the growth condition of SBL.

Charge compensation mechanisms in U{sub 1-x}Gd{sub x}O{sub 2} and Th{sub 1-x}Gd{sub x}O{sub 2-x/2} studied by X-ray Absorption Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Bès, R., E-mail: rene.bes@aalto.fi [Department of Applied Physics, Aalto University, P.O. Box 14100, FI-00076 Aalto (Finland); Pakarinen, J.; Baena, A. [Belgian Nuclear Research Centre (SCK-CEN), Institute for Nuclear Materials Science, Boeretang 200, B-2400 Mol (Belgium); Conradson, S. [Synchrotron SOLEIL, Ligne de Lumière MARS, L' Orme des Merisiers, Saint Aubin, BP 48, F-91192 Gif-sur-Yvette Cedex (France); Verwerft, M. [Belgian Nuclear Research Centre (SCK-CEN), Institute for Nuclear Materials Science, Boeretang 200, B-2400 Mol (Belgium); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FI-00076 Aalto (Finland)

2017-06-15

The charge compensation mechanisms in U{sub 1-x}Gd{sub x}O{sub 2} and Th{sub 1-x}Gd{sub x}O{sub 2-x/2} have been systematically studied using X-ray Absorption Spectroscopy (XAS) upon gradually increasing the Gd content. Gd doped nuclear fuels are widely used for optimizing the fresh core neutronics, yet when Gd{sup 3+} is substituted into U{sup 4+} or Th{sup 4+} lattice position in UO{sub 2} or ThO{sub 2}, respectively, charge must be compensated for charge neutrality. In U{sub 1-x}Gd{sub x}O{sub 2} the general hypothesis has been that the U{sup 4+} will oxidise to U{sup 5+}/U{sup 6+} while in Th{sub 1-x}Gd{sub x}O{sub 2-x/2} the fixed Th{sup 4+} valence requires generation of O vacancies. Our XAS results for a series of technologically relevant Gd contents (x = 0.04 to 0.14) in U{sub 1-x}Gd{sub x}O{sub 2} clearly demonstrate that upon increasing the Gd content U{sup 5+} is formed inducing slight increase in the U coordination number and contraction for the U-O distances while the Gd local environment remains virtually unchanged. For the Th{sub 1-x}Gd{sub x}O{sub 2-x/2} larger Gd fractions were applied (x = 0.10 to 0.34). Nonetheless, both Gd and Th local environments show changes upon increasing the Gd content; the average Gd-O and Th-O distances decrease gradually and the Gd and Th coordination numbers follow the expected trend considering the O vacancy formation to obtain charge neutrality. Finally, comparison to Gd{sub 2}O{sub 3} allowed us to propose that one of the Gd L{sub 3}-edge XANES resonance features is directly connected to the generation of O vacancies.

Impurity-related optical properties in rectangular-transverse section GaAs-Ga{sub 1-x}Al{sub x}As quantum well wires: Hydrostatic pressure and electric field effects

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, J.W.; Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Rodriguez, A.H. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico (UNAM), Apdo. Postal 20-364, San Angel 01000, Mexico DF (Mexico); Porras-Montenegro, N. [Departamento de Fisica, Universidad del Valle, AA 25360, Cali (Colombia)

2007-01-15

Using a variational procedure within the effective mass approximation, we have calculated the influence of an applied electric field and hydrostatic pressure on the shallow-impurity-related optical properties in a rectangular-transverse section GaAs-Ga{sub 1-x}Al{sub x}As quantum well wire. The electric field is applied in the plane of the transverse section of the wire and different angular directions have been considered. The results presented are for the impurity binding energy, its corresponding density of impurity states, and impurity-related transition energy and polarizability. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

Science.gov (United States)

Park, Youngsin; Chan, Christopher C. S.; Taylor, Robert A.; Kim, Nammee; Jo, Yongcheol; Lee, Seung W.; Yang, Woochul; Im, Hyunsik

2018-04-01

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

Composition Dependence of Surface Phonon Polariton Mode in Wurtzite InxGa1−xN (0 ≤ x ≤ 1) Ternary Alloy

International Nuclear Information System (INIS)

Ng, S. S.; Hassan, Z.; Hassan, H. Abu

2008-01-01

We present a theoretical study on the composition dependence of the surface phonon polariton (SPP) mode in wurtzite structure α-In x Ga 1-x N ternary alloy over the whole composition range. The SPP modes are obtained by the theoretical simulations by means of an anisotropy model. The results reveal that the SPP mode of α-In x Ga 1-x N semiconductors exhibits one-mode behaviour. From these data, composition dependence of the SPP mode with bowing parameter of −28.9 cm −1 is theoretically obtained

Donor-impurity related photoionization cross section in GaAs/Ga{sub 1−x}Al{sub x}As concentric double quantum rings: Effects of geometry and hydrostatic pressure

Energy Technology Data Exchange (ETDEWEB)

Baghramyan, H.M. [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Barseghyan, M.G., E-mail: mbarsegh@ysu.am [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Laroze, D. [Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica (Chile); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

2014-09-15

The donor-impurity related photoionization cross section in GaAs/Ga{sub 1−x}Al{sub x}As three-dimensional concentric double quantum rings is investigated. The photoionization cross section dependence on the incident photon energy is studied considering the effects of hydrostatic pressure, variations of aluminum concentration, geometries of the structure, and impurity position. The interpretation of the dipole matrix element, which reflects the photoionization probability, is also given. We have found that these parameters can lead to both redshift and blueshift of the photoionization spectrum and also influence the cross section peak value.

Implantation induced electrical isolation of sulphur doped GaN xAs1-x layers

International Nuclear Information System (INIS)

Ahmed, S.; Lin, J.; Haq, A.; Sealy, B.

2005-01-01

The study of III-N-V semiconductor alloys, especially GaN x As 1-x has been increasing in the last few years. The strong dependence of the band gap on the nitrogen content has made this material important for a variety of applications, including long wavelength optoelectronic devices and high efficiency solar cells. We report on the effects of sulphur doping implants on the achieved electrical isolation in GaN x As 1-x layers using proton bombardment. Sulphur ions were implanted in MOCVD-grown GaN x As 1-x layers (1.4 μm thick with nominal x = 1%) with multiple energies creating approximately uniform doping profiles in the range of about 1 x 10 18 -5 x 10 19 cm -3 . Several proton implants were performed in order to find the threshold dose (minimum dose to achieve maximum sheet resistivity) for the electrical isolation of n-type GaN x As 1-x layers. Results show that the sheet resistance of n-type layers can be increased by about five orders of magnitude by proton implantation and the threshold dose to convert a conductive layer to a highly resistive one depends on the original free carrier concentration. The study of annealing temperature dependence of sheet resistivity in proton-isolated GaN x As 1-x layers shows that the electrical isolation can be preserved up to 450 and 500 deg. C when the implantation is performed at RT and 77 K with threshold dose, respectively. These results for n-type GaN x As 1-x layers are novel and have ramifications for device engineers

Optical properties of lattice matched InxGa1-xP1-yNy heteroepitaxial layers on GaP

International Nuclear Information System (INIS)

Imanishi, T.; Wakahara, A.; Kim, S.M.; Yonezu, H.; Furukawa, Y.

2005-01-01

Optical constants and band structure of In x Ga 1-x P 1-y N y lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X-ray diffraction and X-ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E 0 (Γ v to Γ c ), E 1 (L v to L c ) and E 2 (X v to X c ) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, E PL , and E 0 shift to lower energy, and the energy difference ΔE=E 0 -E PL decrease from 380 meV to 110 meV. The large red-sift of E PL from the E 0 suggest that the luminescence is of defect-related luminescence, and crossover point of indirect band structure estimated by the extrapolation of N-composition dependence of ΔE is estimated to be around in In 0.1 Ga 0.9 P 0.96 N 0.04 . (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

Energy Technology Data Exchange (ETDEWEB)

Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)

2009-12-15

The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

Comparative study of the hydrostatic pressure and temperature effects on the impurity-related optical properties in single and double GaAs-Ga{sub 1-x}Al{sub x}As quantum wells

Energy Technology Data Exchange (ETDEWEB)

Odhiambo Oyoko, H. [Department of Physics, Westville Campus, University of KwaZulu-Natal, Private Bag X 54001, Durban 4000 (South Africa); Porras-Montenegro, N. [Departamento de Fisica, Universidad del Valle, AA 25360, Cali (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)

2007-07-01

Using a variational technique within the effective mass approximation we have carried out a comparative study of the effect of hydrostatic pressure and temperature on the shallow-impurity related optical absorption spectra in GaAs-Ga{sub 1-x}Al{sub x}As single and double quantum wells. The results show a pressure dependent read-shift and a temperature dependent blue-shift in the optical absorption spectra. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Progress in KNbO/sub 3/ crystal growth and its use in second harmonic generation with a cw-Ga/sub 1-x/Al/sub x/As laser

International Nuclear Information System (INIS)

Looser, H.; Gunter, P.; Wu, X.; Arend, H.

1987-01-01

KNbO/sub 3/ is especially well suited for second harmonic generation of dye and Ga/sub 1-x/Al/sub x/As lasers with wavelength λ ≅ 860 nm. Using its high nonlinear optical coefficient, d/sub 32/ = 20.3 pm/V, noncritical type l phase matching is possible for fundamental wavelengths of 840-990 nm with crystal temperatures between -40 and 210 0 C. With a pulsed laser diode the authors previously reported 0.35-mW second harmonic peak power from 0.8-W fundamental frequency distributed among eight modes. In this paper, this work is extended to high-power monomode cw laser diodes. Other device parameters such as temperature stability and influence of the crystal homogeneity on the efficiency are discussed

Optimization of near and far patterns field in InxGa1-xN Lasers

International Nuclear Information System (INIS)

Martín, Juan A.; Mon, E.; Sánchez, M.

2008-01-01

The introduction on the market of lasers based on In x Ga 1-x N emitted at short wavelengths (λ = 430-450 nm), has enabled a considerable increase of the density of data storage on optical discs. However, despite the successes in the manufacture of these lasers are still far from being optimized. One of the difficulties present in these structures is the technological difficulty to grow In x Ga 1-x N cladding layers with high aluminum content (x>0.13) and wide enough to ensure the necessary optical confinement. This difficulty is due to the network constant difference between the Al x Ga 1-x N and the GaN and the presence of narrow cladding layers causes the undesirable high-order modes in [1] far field patterns. This paper analyzes the influence of the thickness of the layers that form the structure on the patterns of field near and far In x Ga 1-x N structures with multiple quantum wells in the active area. Structures are compared with staggered and parabolic variation of the refractive index. Found that with appropriate combinations of the thickness of this layer the detrimental effects that appear in from near and far field patterns can be eliminated without the need to grow very wide cladding layers, which represents an alternative solution to this technological problem [2]. [1] M. Onomura et al, IEEE J. Sel. Top. Quantum Electron. 5 (1999) 76. [2] J.A. Martín et al. Superlattices and Microstructures 43 (200 8) 575.

Physical properties and applications of InxGa1−xN nanowires

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Gómez-Gómez, M.; Garro, N.; Cantarero, A.; Martínez-Criado, G.; Denker, C.; Malindretos, J.; Rizzi, A.

2014-01-01

We have successfully grown In x Ga 1−x N nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. In x Ga 1−x N is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowires help to explain this contradictory result

Cascaded Ga1-xAlxAs/GaAs solar cell with graded i-region

Science.gov (United States)

Mil'shtein, Sam; Halilov, Samed

2018-02-01

In current study we designed p-i-n junction with extended intrinsic layer, where linearly graded Alx Ga1-x As presents variable energy gap so needed for effective harvesting of sun radiation. The design realization involves two regions of compositional structure in the stacking direction. The top AlxGa1-xAs layer of 1 um total thickness has stoichiometric structure x=0.3-0.2d, where depth d runs from 0 to 1 um, topmost 200 nm of which is Be-doped. Bottom AlxGa1-xAs layer of 3 um total thickness has a variable composition of x=0.133-0.033d, d runs from 1 to 4 um, the very bottom of which with 10 nm thickness is Si-doped. On the top surface, there is a 50 nm layer of p+ doped GaAs as a spacer for growing AuGe/Ni anode electrode of 20% surface area, the bottom is coated with AuGe/Ni cathode electrode. The designed cell demonstrates 89% fill factor and 30% conversion efficiency without anti-reflection coating.

Cerium valence change in the solid solutions Ce(Rh1-xRux)Sn

International Nuclear Information System (INIS)

Niehaus, Oliver; Riecken, Jan F.; Winter, Florian; Poettgen, Rainer; Muenster Univ.; Abdala, Paula M.; Chevalier, Bernard

2013-01-01

The solid solutions Ce(Rh 1-x Ru x )Sn were investigated by means of susceptibility measurements, specific heat, electrical resistivity, X-ray absorption spectroscopy (XAS), and 119 Sn Moessbauer spectroscopy. Magnetic measurements as well as XAS data show a cerium valence change in dependence on the ruthenium content. Higher ruthenium content causes an increase from 3.22 to 3.45 at 300 K. Furthermore χ and χ -1 data indicate valence fluctuation for cerium as a function of temperature. For example, Ce(Rh 0.8 Ru 0.2 )Sn exhibits valence fluctuations between 3.42 and 3.32 in the temperature range of 10 to 300 K. This could be proven by using the interconfiguration fluctuation (ICF) model introduced by Sales and Wohlleben. Cerium valence change does not influence the tin atoms as proven by 119 Sn Moessbauer spectroscopy, but it influences the electrical properties. Ce(Rh 0.9 Ru 0.1 )Sn behaves like a typical valence fluctuating compound, and higher ruthenium content causes an increase of the metallic behavior. (orig.)

Preparation and characterization of La1-xCexCoO3 perovskite oxides for energy materials

International Nuclear Information System (INIS)

Nyamdavaa, E.; Sevjidsuren, G.; Altantsog, P.; Yuanga, E.

2016-01-01

Cerium-doped lanthanum cobaltite perovskites (La 1-x Ce x CoO 3 with x = 0,0.2, 0.4) were prepared by the sol-gel method (calcined for 5 h at 750°C) and characterized by X-ray diffraction (XRD), X-ray absorption (XAS), energy-dispersive X-ray spectroscopy (EDS), and BET surface area analysis. The results showed that the cerium doping promoted the structural transformation of LaCoO 3 from rhombohedral into the cubic structure. High specific surface area and small crystallite size are achieved at x = 0.2. The XAS results confirmed the formation of compound La 1-x Ce x CoO 3 . [ru

Hydrostatic pressure effects on the {gamma}-X conduction band mixing and the binding energy of a donor impurity in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells

Energy Technology Data Exchange (ETDEWEB)

Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62210, Cuernavaca (Mexico)

2007-06-15

Mixing between {gamma} and X valleys of the conduction band in GaAs-Ga{sub 1-x}Al{sub x}As quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. The mixing is considered along the lines of a phenomenological model. Variation of the confined ground state in the well as a function of the pressure is reported. The dependencies of the variationally calculated binding energy of a donor impurity with the hydrostatic pressure and well width are also presented. It is shown that the inclusion of the {gamma}-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been observed for pressures above 20 kbar. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

New process of preparation, X-ray characterisation, structure and vibrational studies of a solid solution LiTiOAs 1-xP xO 4 (0⩽ x⩽1)

Science.gov (United States)

Chakir, M.; El Jazouli, A.; Chaminade, J. P.; Bouree, F.; de Waal, D.

2006-01-01

LiTiOAs 1-xP xO 4 (0⩽ x⩽1) compounds have been prepared using solutions of Li, Ti, As and P elements as starting products. Selected compositions have been investigated by powder X-ray or neutrons diffraction analysis, Raman and infrared spectroscopy. The structure of LiTiOAs 1-xP xO 4 ( x=0, 0.5 and 1) samples determined by Rietveld analysis is orthorhombic with Pnma space group. It is formed by a 3D network of TiO 6 octahedra and XO 4 ( X=As 1-xP x) tetrahedra where octahedral cavities are occupied by lithium atoms. TiO 6 octahedra are linked together by corners and form infinite chains along a-axis. Ti atoms are displaced from the centre of octahedral units in alternating short (1.700-1.709 Å) and long (2.301-2.275 Å) Ti-O bonds. Raman and infrared studies confirm the existence of Ti-O-Ti chains. Thermal stability of LiTiOAsO 4 has been reported.

Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

KAUST Repository

Mumthaz Muhammed, Mufasila; Xu, Jian; Wehbe, Nimer; Roqan, Iman S.

2018-01-01

High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.

Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

KAUST Repository

Mumthaz Muhammed, Mufasila

2018-05-30

High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.

Morphological Control of In _x Ga _1–x P Nanocrystals Synthesized in a Nonthermal Plasma

Energy Technology Data Exchange (ETDEWEB)

Bronstein, Noah D. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States; Wheeler, Lance M. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States; Anderson, Nicholas C. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States; Neale, Nathan R. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States

2018-04-09

We explore the growth of InxGa1-xP nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated by the presence of both dative- and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP1.5 and In0.5Ga0.5P1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.

Structural Analysis of InxGa1−xN/GaN MQWs by Different Experimental Methods

International Nuclear Information System (INIS)

Ding Bin-Beng; Pan Feng; Fa Tao; Cheng Feng-Feng; Yao Shu-De; Feng Zhe-Chuan

2011-01-01

Structural properties of In x Ga 1−x N/GaN multi-quantum wells (MQWs) grown on sapphire by metal organic chemical vapor deposition are investigated by synchrotron radiation x-ray diffraction (SRXRD), Rutherford backscattering/channelling (RBS/C) and high-resolution transmission electron microscopy. The sample consists of eight periods of In x Ga 1−x N/GaN wells of 2.1 nm thickness and 8.5 nm thickness of GaN barrier, and the results are very close, which verifies the accuracy of the three methods. The indium content in In x Ga 1−x N/GaN MQWs by SRXRD and RBS/C is estimated, and results are in general the same. By RBS/C random spectra, the indium atomic lattice substitution rate is 94.0%, indicating that almost all indium atoms in In x Ga 1−x N/GaN MQWs are at substitution, that the indium distribution of each layer in In x Ga 1−x N/GaN MQWs is very homogeneous and that the In x Ga 1−x N/GaN MQWs have a very good crystalline quality. It is not accurate to estimate indium content in In x Ga 1−x N/GaN MQWs by photoluminescence (PL) spectra, because the result from the PL experimental method is very different from the results by the SRXRD and RBS/C experimental methods. (cross-disciplinary physics and related areas of science and technology)

Characterization of Al{sub x}Ga{sub 1-x}As/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

Energy Technology Data Exchange (ETDEWEB)

Castillo-Ojeda, R. [Universidad Politecnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Barbara, Municipio de Zempoala, Hidalgo 43830 (Mexico); Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.co [Instituto Politecnico Nacional, Centro de Investigacion en Biotecnologia Aplicada, CIBA-IPN, Ex Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700 (Mexico); Galvan-Arellano, M.; Pena-Sierra, R. [CINVESTAV-IPN, Depto. de Ing. Electrica, SEES. Apdo. 14-740, Mexico, D.F. 07000 (Mexico)

2011-06-15

This work presents the results of the growth and characterization of Al{sub x}Ga{sub 1-x}As/GaAs multilayer structures obtained in a metallic-arsenic-based-MOCVD system. The main goal is to explore the ability of the growth system to grow high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH{sub 3}), which manifests in the electrical and optical characteristics of both GaAs and Al{sub x}Ga{sub 1-x}As layers. The characterization of these epilayers and structures was performed using low-temperature photoluminescence, Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). - Research highlights: {yields} This work is reported the growth of AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by a solid arsenic based MOCVD system. {yields} The results obtained with this system are comparable with those obtained with the traditional arsine based growth system. {yields} The main limitation of the alternative MOCVD system is related to the lack of monoatomic hydrogen on the growth surface that acts modifying the surface kinetics and enhancing the carbon incorporation. {yields} The experimental results indicate that it can be grown AlxGa1-xAs using elemental arsenic by MOCVD, which can be used to optoelectronic devices.

Linear and nonlinear optical absorption coefficients in GaAs/Ga{sub 1-x}Al{sub x}As concentric double quantum rings: Effects of hydrostatic pressure and aluminum concentration

Energy Technology Data Exchange (ETDEWEB)

Baghramyan, H.M. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Barseghyan, M.G., E-mail: mbarsegh@ysu.am [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Restrepo, R.L. [Escuela de Ingenieria de Antioquia, AA 7516 Medellin (Colombia); Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)

2013-02-15

The linear and nonlinear intra-band optical absorption coefficients in GaAs/Ga{sub 1-x}Al{sub x}As two-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and aluminum concentration the energies of the ground (n=1,l=0) and the first excited state (n=2,l=1) have been found using the effective mass approximation and the transfer matrix formalism. The energies of these states and the corresponding threshold energy of the intra-band optical transitions are examined as a function of hydrostatic pressure and aluminum concentration for different sizes of the structure. We also investigated the dependencies of the linear, nonlinear, and total optical absorption coefficients as functions of the incident photon energy for different values of hydrostatic pressure, aluminum concentration, sizes of the structure, and incident optical intensity. Its is found that the effects of the hydrostatic pressure and the aluminum concentration lead to a shifting of the resonant peaks of the intra-band optical spectrum. - Highlights: Black-Right-Pointing-Pointer Linear and nonlinear intra-band absorption in quantum rings. Black-Right-Pointing-Pointer Threshold energy strongly depends on the hydrostatic pressure. Black-Right-Pointing-Pointer Threshold energy strongly depends on the stoichiometry and sizes of structure. Black-Right-Pointing-Pointer Optical absorption is affected by the incident optical intensity.

Spin excitation and band-narrowing in AlxGa1-xAs heterostructures

International Nuclear Information System (INIS)

Miah, M. Idrish

2010-01-01

We studied the spin excitation in dependences of the applied electric field and lattice temperature (LT) via the measurements of the circularly polarized photoluminescence (CPPL) in Al x Ga 1-x As heterostructures (HSs). The intensity of CPPL was found to strongly depend on the electric field applied to the HSs. The CPPL was also found to enhance with decreasing LT. It was demonstrated that the observed LT dependence might be due to the LT-dependent band-gap shift of the HS materials.

Quantitative determination of In clustering in In-rich InxGa1−xN thin films

International Nuclear Information System (INIS)

Shang, Xiaoxia; Fonda, Emiliano; Ciatto, Gianluca; Luca, Marta De; Pettinari, Giorgio; Bisognin, Gabriele; Berti, Marina; Amidani, Lucia; Boscherini, Federico

2014-01-01

We investigated atomic ordering in In-rich In x Ga 1−x N epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on In x Ga 1−x N alloys with a very high In concentration. (paper)

Mutual alloying of XAs (X=Ga, In, Al) materials: Tuning the optoelectronic and thermodynamic properties for solar energy applications

KAUST Repository

Haq, Bakhtiar Ul

2014-02-01

In the present work we did mutual alloying of the versatile XAs (X=Ga, In, Al) materials in order to improve their efficiency and enhance their range of technological applications using state of the art first principles method. We investigate the structural, electronic and thermodynamic properties of Ga1-xAlxAs, Ga1-xInxAs and In1-xAlxAs for x=0.25, 0.50, and 0.75. Calculations have been performed using the density functional theory (DFT) as implemented within the full potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. For exchange and correlation energy treatment, we employed the local density approximations (LDA) as proposed by Wang and Perdew and the generalized gradient approximation (GGA) from Perdew et al. proposed. To calculate the accurate band structure, recently modified Becke Johnson (mBJ) potential was suggested as an alternative. Our calculations show a linear fall in the lattice constant in contrast to linear rise in bulk moduli of Ga1-xAlxAs and In1-xAlxAs with the increase of Al concentration. However the change of indium concentration in Ga1-xInxAs is displaying a reverse effect. The energy band gap of Ga1-xAlxAs and In1-xAlxAs was found to be increased, where a crossover from direct to indirect band gap has been observed with the increase of Al concentration. This direct to indirect crossover was found at 93.4% of Al concentration for Ga1-xAlxAs and at 84.63% of Al concentration for In1-xAlxAs. The effect of the mutual alloying of XAs materials on the thermodynamic properties is comprehensively reported. © 2013 Elsevier Ltd.

Mutual alloying of XAs (X=Ga, In, Al) materials: Tuning the optoelectronic and thermodynamic properties for solar energy applications

KAUST Repository

Haq, Bakhtiar Ul; Ahmed, Rashid; El Haj Hassan, Fouad; Khenata, Rabah; Kasmin, Mohd Khalid; Goumri-Said, Souraya

2014-01-01

In the present work we did mutual alloying of the versatile XAs (X=Ga, In, Al) materials in order to improve their efficiency and enhance their range of technological applications using state of the art first principles method. We investigate the structural, electronic and thermodynamic properties of Ga1-xAlxAs, Ga1-xInxAs and In1-xAlxAs for x=0.25, 0.50, and 0.75. Calculations have been performed using the density functional theory (DFT) as implemented within the full potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. For exchange and correlation energy treatment, we employed the local density approximations (LDA) as proposed by Wang and Perdew and the generalized gradient approximation (GGA) from Perdew et al. proposed. To calculate the accurate band structure, recently modified Becke Johnson (mBJ) potential was suggested as an alternative. Our calculations show a linear fall in the lattice constant in contrast to linear rise in bulk moduli of Ga1-xAlxAs and In1-xAlxAs with the increase of Al concentration. However the change of indium concentration in Ga1-xInxAs is displaying a reverse effect. The energy band gap of Ga1-xAlxAs and In1-xAlxAs was found to be increased, where a crossover from direct to indirect band gap has been observed with the increase of Al concentration. This direct to indirect crossover was found at 93.4% of Al concentration for Ga1-xAlxAs and at 84.63% of Al concentration for In1-xAlxAs. The effect of the mutual alloying of XAs materials on the thermodynamic properties is comprehensively reported. © 2013 Elsevier Ltd.

Collective effects of interface roughness and alloy disorder in InxGa1-xN/GaN multiple quantum wells

International Nuclear Information System (INIS)

Zeng, K.C.; Smith, M.; Lin, J.Y.; Jiang, H.X.

1998-01-01

The collective effects of alloy disorder and interface roughness on optical properties of In x Ga 1-x N/GaN multiple quantum wells (MQWs) have been studied. The results are compared with those of GaN/AlGaN MQWs and InGaN epilayers. In x Ga 1-x N/GaN MQWs emit a broad and asymmetrical photoluminescence (PL) band, while GaN/AlGaN MQWs and InGaN epilayers emit narrower and Gaussian-shaped PL bands. Furthermore, the decay of excitons at low temperatures in In x Ga 1-x N/GaN MQWs follows a nonexponential function even at the lower-energy side of the PL spectral peak, while those in GaN/AlGaN MQWs and in InGaN epilayers follow a single exponential function. Both alloy disorder and interface roughness have to be included in order to interpret the PL emission spectrum and the decay dynamics in In x Ga 1-x N/GaN MQWs. Important parameters of the In x Ga 1-x N/GaN MQWs, σ x ,σ L , and dτ/dL, denoting the alloy disorder, the interface roughness, and the rate of changing of the exciton decay lifetime with well width, respectively, have been deduced. The method developed here can be used to determine σ x ,σ L , and dτ/dL in any MQW systems with wells being alloy materials. copyright 1998 American Institute of Physics

The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

International Nuclear Information System (INIS)

Mohammad, Rezek; Katircioglu, Senay

2009-01-01

The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen InxGa1−xNyAs1−y/GaAs cylindrically shaped quantum dots

International Nuclear Information System (INIS)

Duque, C.M.; Morales, A.L.; Mora-Ramos, M.E.; Duque, C.A.

2014-01-01

An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs

Comparison between XAS, AWAXS and DAFS applied to nanometer scale supported metallic clusters. Pt.1; monometallic clusters

International Nuclear Information System (INIS)

Bazin, D.C.; Sayers, D.A.

1993-01-01

The structural information found using three techniques related to synchrotron radiation are compared. XAS (X-ray Absorption Spectroscopy), AWAXS (Anomalous Wide Angle X-ray Scattering) and DAFS (Diffraction Anomalous Fine Structure) are applied to nanometer scale metallic clusters. (author)

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

KAUST Repository

Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

2016-01-01

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

KAUST Repository

Alshehri, Bandar

2016-06-07

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

X1X1X2X2/X1X2Y sex chromosome systems in the Neotropical Gymnotiformes electric fish of the genus Brachyhypopomus

Directory of Open Access Journals (Sweden)

Adauto Lima Cardoso

2015-06-01

Full Text Available Several types of sex chromosome systems have been recorded among Gymnotiformes, including male and female heterogamety, simple and multiple sex chromosomes, and different mechanisms of origin and evolution. The X1X1X2X2/X1X2Y systems identified in three species of this order are considered homoplasic for the group. In the genus Brachyhypopomus, only B. gauderio presented this type of system. Herein we describe the karyotypes of Brachyhypopomus pinnicaudatus and B. n. sp. FLAV, which have an X1X1X2X2/X1X2Y sex chromosome system that evolved via fusion between an autosome and the Y chromosome. The morphology of the chromosomes and the meiotic pairing suggest that the sex chromosomes of B. gauderio and B. pinnicaudatus have a common origin, whereas in B . n. sp. FLAV the sex chromosome system evolved independently. However, we cannot discard the possibility of common origin followed by distinct processes of differentiation. The identification of two new karyotypes with an X1X1X2X2/X1X2Y sex chromosome system in Gymnotiformes makes it the most common among the karyotyped species of the group. Comparisons of these karyotypes and the evolutionary history of the taxa indicate independent origins for their sex chromosomes systems. The recurrent emergence of the X1X1X2X2/X1X2Y system may represent sex chromosomes turnover events in Gymnotiformes.

Study of TiO2(1 1 0)-p(1x1), p(1x2) and p(1x3) surface structures by impact collision ion scattering spectroscopy (ICISS)

International Nuclear Information System (INIS)

Asari, E.; Souda, R.

2000-01-01

The surface structure of TiO 2 (1 1 0)-p(1x1), p(1x2) and p(1x3) were studied using impact collision ion scattering spectroscopy (ICISS). We found that (i) the height of bridging oxygen for the p(1x1) is comparative to that of bulk structure, (ii) the p(1x2) surface has the added Ti 2 O 3 unit rows proposed by Onishi et al. and also the oxygen atoms rows between Ti 2 O 3 unit rows and (iii) the p(1x3) surface is constructed with the same added Ti 2 O 3 unit rows as that in the p(1x2) surface, but the bridging oxygen rows exist between the Ti 2 O 3 unit rows

Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Webster, R F; Soundararajah, Q Y; Griffiths, I J; Cherns, D; Novikov, S V; Foxon, C T

2015-01-01

Transmission electron microscopy is used to examine the structure and composition of In x Ga 1−x N nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core–shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x ≥ 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration. (paper)

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

International Nuclear Information System (INIS)

Rhode, S. L.; Fu, W. Y.; Massabuau, F. C.-P.; Kappers, M. J.; McAleese, C.; Oehler, F.; Humphreys, C. J.; Sahonta, S.-L.; Moram, M. A.; Dusane, R. O.

2014-01-01

The formation of trench defects is observed in 160 nm-thick In x Ga 1−x N epilayers with x ≤ 0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I 1 -type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed within the GaN pseudosubstrate layer of these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal plane, and not basal plane stacking faults, as previously reported by other groups. The origins of these defects are discussed and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures.

PHOTOELECTRON-SPECTROSCOPY STUDY OF THE ELECTRONIC-STRUCTURE OF THE INCOMMENSURATE INTERGROWTH COMPOUNDS (SBS)(1.15)(TIS2)(N) WITH N=1, 2

NARCIS (Netherlands)

REN, Y; HAAS, C; WIEGERS, GA

1995-01-01

The electronic structure of the inorganic misfit-layer compounds (SbS)(1.15)(TiS2)(n) (n = 1,2) has been investigated using x-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and x-ray absorption spectroscopy (XAS). These compounds are built of alternating modulated

Growth of pentacene on Ag(1 1 1) surface: A NEXAFS study

International Nuclear Information System (INIS)

Pedio, M.; Doyle, B.; Mahne, N.; Giglia, A.; Borgatti, F.; Nannarone, S.; Henze, S.K.M.; Temirov, R.; Tautz, F.S.; Casalis, L.; Hudej, R.; Danisman, M.F.; Nickel, B.

2007-01-01

Thin films of pentacene (C 22 H 14 ) have become widely used in the field of organic electronics. Here films of C 22 H 14 of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented. XAS spectra at the C K-edge were collected as a function of the direction of the electric field at the surface. The different features of the spectra were assigned to resonances related to the various molecular unoccupied states by the comparison with the absorption coefficient of the pentacene gas phase. The transitions involving antibonding π states show a pronounced angular dependence for all the measured coverages, from submonolayer to multilayer. The spectra analysis indicates a nearly planar chemisorption of the first pentacene layer with a tilt angle of 10 o

Beta radiation effects in sup 1 sup 3 sup 7 Cs-substituted pollucite

CERN Document Server

Hess, N J; Conradson, S D; Weber, W J

2000-01-01

The effect of high-energy beta radiation on the long-range and local structure of sup 1 sup 3 sup 7 Cs-substituted CsAlSi sub 2 O sub 6 (pollucite) was studied by X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) techniques at the Cs K-edge. Analysis of the XRD pattern of pollucite with an absorbed dose of 10 sup 1 sup 8 beta decays/g using Rietveld analysis indicates a 0.5-1% volume expansion of the tetrahedral structure as measured at 50 K and a minor displacement of the Cs cation toward the face of one of the six-membered rings. Analysis of the real-space pair-distribution function obtained from Fourier transformation of the diffraction pattern indicates significant correlated movement of the (Si,Al)-O pairs and large static disorder between Cs-O pairs. Analysis of the Cs K-edge XAS revealed substantial contributions from the Cs atomic X-ray absorption. This likely results from the exceedingly long Cs-O bond distances in the pollucite structure, which diminish the fine structure of the XAS os...

Structural and electronic properties of Ga{sub 1-x}In{sub x} As{sub 1-y}N{sub y} quaternary semiconductor alloy on GaAs substrate

Energy Technology Data Exchange (ETDEWEB)

Aslan, Metin, E-mail: maslan@sakarya.edu.tr [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey); Yalc Latin-Small-Letter-Dotless-I n, Battal G.; Uestuendag, Mehmet [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey)

2012-04-05

Highlights: Black-Right-Pointing-Pointer In this study we used DFT in the frame of LDA approach to determine electronic and structural properties of GaInAsN alloy. Black-Right-Pointing-Pointer We calculated lattice parameter and band gap energy of binary (GaAs, InAs, and GaN), ternary (GaInAs, GaAsN) and quaternary (GaInAsN) semiconductor alloys. Black-Right-Pointing-Pointer We formulated lattice parameter of GaInAsN respect to In and N composition. Black-Right-Pointing-Pointer We investigated different In and N composition of GaInAsN/GaAs heterostructure for various device applications. - Abstract: We have presented structural and electronic properties of binary (GaAs, GaN and InAs), ternary (Ga{sub 1-x}In{sub x}As and GaAs{sub 1-y}N{sub y}) and quaternary (Ga{sub 1-x}In{sub x}As{sub 1-y}N{sub y}) semiconductor alloys by using a first-principles pseudopotential technique. The structural and electronic properties of Zinc-Blende phase of these materials have been calculated by using the local density approximation (LDA) of the density-functional theory (DFT). To obtain the lattice parameter and band gap energy of the (GaInAsN) quaternary semiconductor alloy we separately calculated the lattice constant and band gap energies of ternary semiconductor alloys, namely GaAsN and GaInAs. The calculated lattice constant, bulk modulus and the direct band gaps for studied semiconductors showed great parallelism with the previous available theoretical and experimental studies.

Peak response wavelengths of p- and n-type InxGa1-xAs-InP quantum well infrared photodetectors

International Nuclear Information System (INIS)

Fu, Y.; Willander, M.; Sengupta, D.K.

2005-01-01

p- and n-type In x Ga 1-x As-InP quantum wells are suitable for multi-color infrared photodetector applications in atmospheric windows due to improved barrier quality and carrier-transport properties. We apply the k.p method to study the energy band structures and optical transition properties, which show that the peak response wavelengths of p- and n-type In x Ga 1-x As-InP quantum well infrared photodetectors (QWIPs) are determined not only by the energy distance from the ground sublevels in the quantum well to the energy band edges of extended states, but also by the characteristics of the extended states. The optical phonon scattering process converts the broad absorption spectrum of the p-QWIP from 0 to 16 μm into a short-wavelength spectrum centered at 4.5 μm. The transport of electrons in the extended states of the n-QWIP is characterized by running wave boundary conditions, resulting in a theoretically optimal absorption rate by a 8-nm-thick In 0.53 Ga 0.47 As quantum well. Moreover, a conduction-band offset of 0.5 for an In x Ga 1-x As-InP (x=0.53) heterostructure gives the best data fitting of theoretical and experimental response peaks, whereas 0.55 is generally recommended in the literature. (orig.)

X-ray absorption investigation of the valence state and electronic structure of La1−xCaxCoO3−δ in comparison with La1−xSrxCoO3−δ and La1−xSrxFeO3−δ

International Nuclear Information System (INIS)

Haas, O.; Ludwig, Chr.; Bergmann, U.; Singh, R.N.; Braun, A.; Graule, T.

2011-01-01

3d metal K-shell X-ray absorption spectra of perovskites with the composition La 1−x Ca x CoO 3−δ (x=0, 0.2, 0.4, 0.5, 0.6, 0.8), La 1−x Sr x CoO 3−δ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) and La 1−x Sr x FeO 3−δ (x=0, 0.2, 0.4, 0.5, 0.6, 0.8) are compared on the basis of pre-edges, white line features and extended fine structures. The measurements were performed at 300 K and for La 1−x Ca x CoO 3−δ also at temperatures as low as 10–20 K. Going to low-temperature the measurements indicate an increase in t 2g ⁎ and a decrease in e g ⁎ orbital occupancy, which is most accentuated in the LaCoO 3 sample. Virtually no Co K-edge shift was observed for the La 1−x Ca x CoO 3−δ and La 1−x Sr x CoO 3−δ compounds and the Co–O distances are also not significantly reduced when La 3+ is partially substituted by Ca 2+ or Sr 2+ . From the pre-edge features of these perovskites we are tended to conclude that the t 2g ⁎ orbitals are less, and the e g ⁎ orbitals are more occupied with increasing x in the Ca and Sr substituted compounds, whereas the total d-electron density is not changing. These results indicate that cobalt prefers a valence state of 3 + in these Co perovskites. This could also be confirmed with iodometric titrations. The Fe perovskites behave differently. In contrast to the Co perovskites, for La 1−x Sr x FeO 3−δ perovskites the Fe K-edge is shifted, the pre-edge features intensity is increasing and the Fe–O bond length is decreasing with increasing x. The valence states of the iron in the La 1−x Sr x FeO 3−δ perovskites in fact increase as much as x increases. - Graphical abstract: Co K and Fe K pre-edge of La 1−x Ca x CoO 3−δ and La 1−x Sr x FeO 3−δ perovskites one of the evidences in favor of δ=x/2 for the Co-perovskites and δ=0 for the Fe-perovskites. Highlights: ► XAS a valuable tool to evaluate the valence states of Co and Fe perovskites. ► For La 1−x Ca x CoO 3−δ and La 1−x Sr x CoO 3�

Optical properties of tellurium-doped InxGa1-xAsySb1-y epitaxial layers studied by photoluminescence spectroscopy

International Nuclear Information System (INIS)

Diaz-Reyes, J; Cardona-Bedoya, J A; Gomez-Herrera, M L; Herrera-Perez, J L; Riech, I; Mendoza-Alvarez, J G

2003-01-01

Controlled doping of quaternary alloys of In x Ga 1-x As y Sb 1-y with tellurium is fundamental to obtain the n-type layers needed for the development of optoelectronic devices based on p-n heterojunctions. InGaAsSb epitaxial layers were grown by liquid phase epitaxy and Te doping was obtained by incorporating small Sb 3 Te 2 pellets in the growth melt. The tellurium doping levels were in the range 10 16 -10 17 cm -3 . We have used low-temperature photoluminescence (PL) spectroscopy to study the influence of the Te donor levels on the radiative transitions shown in the PL spectra. The PL measurements were done by exciting the samples with the 448 nm line of an Ar ion laser with varying excitation powers in the range from 10 to 200 mW. For the low-doped sample the PL spectrum showed a narrow exciton-related peak centred at around 610 meV with a full width at half maximum (FWHM) of about 7 meV which is evidence of the good crystalline quality of the layers. For higher Te doping, the PL spectra show the presence of band-to-band and donor-to-acceptor transitions which overlap as the Te concentration increases. The peak of the PL band shifts to higher energies as Te doping increases due to a band-filling effect as the Fermi level enters into the conduction band. From the peak energy of the PL spectra, and using a model that includes the band-filling and band-shrinkage effects due to the carriers, we have estimated the effective carrier concentration due to doping with Te in the epilayers

1913–2013 – The centennial of X-ray absorption spectroscopy (XAS): Evidences about a question still open

Energy Technology Data Exchange (ETDEWEB)

Mottana, Annibale, E-mail: annibale.mottana@uniroma3.it [Università degli Studi Roma Tre, Dipartimento di Scienze, Largo S. Leonardo Murialdo 1, I-00146 Roma (Italy); Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Frascati, Via E. Fermi 40, I-00044 Frascati, RM (Italy)

2014-10-15

Highlights: • X-ray Absorption Spectroscopy (XAS) cannot be dated exactly as for its birth. • The assumed discoverer, M. de Broglie, was preceded by J. Herweg in the submission. • However, both their spectra were found to be mistaken. • Before the work of W. Stenström and H. Fricke no sure evidence of XAS is published. • The solution is, probably, taking October 1, 1918 as XAS fictitious birthday. - Abstract: In 1913 J. Herweg first (June 30) and M. de Broglie slightly later (November 17) claimed the discovery of a series of spots and lines closely following the main absorption edges of heavy metals, which they interpreted as the proof of the existence of X-ray spectra analogous to light spectra. In the following year they documented their discoveries via photographic plates. However, they were both discredited: Herweg by G.E.M. Jauncey, who showed that his spectra, taken on Pt and W, did not obey Moseley's rule; de Broglie by W.H. Bragg, M. Siegbahn and E. Wagner, who showed that his lines were in fact the fluorescence lines of the Ag and Br constituents of the photographic emulsion. Consequently, W. Stenström's description (sent to publisher on July 2, 1918) of certain photographically recorded and graphically rendered modulations near the M-series edges of heavy metals may possibly be the first published evidence of true X-ray absorption spectra. Indeed, they were interpreted as such by W. Kossel (1920) in his seminal theoretical paper. Otherwise, H. Fricke's table, although printed in 1920, which exhibits the photographic plate of sulphur absorption dated October 1, 1918, and its graphical rendering by a photometric method, is the first unequivocally dated evidence of recorded modulations at a XAS K-edge.

Enhanced electroabsorption in strained-layer InxGa1-xAs-InP quantum wells via absorption edge merging

International Nuclear Information System (INIS)

Gomatam, B.N.; Anderson, N.G.

1990-01-01

Optoelectronic modulators are useful for optical communications, optical computing and other applications which require the electronic control of guided light. Considerable research has recently been devoted to multiple quantum well (MQW) modulators which use an electroabsorption effect unique to quantum wells: the quantum confined Stark effect (QCSE). Voltage controlled optical modulation can be achieved by Stark-shifting the absorption edge above and below the incident photon energy. This paper reports that, to obtain increased optical on-off ratios at decreased drive voltages, the authors are investigating a novel approach which exploits characteristics of MQWs under biaxial tension. The light hole band edge lies at a higher energy than the heavy hole band edge in these structures, which is opposite the case for unstrained or biaxially compressed structures. Since the absorption edge associated with the heavy holes decreases more rapidly with applied field than that for the light holes, merging of the two edges can be expected at some value of the applied field. This effect here called absorption edge merging (AEM), can be expected to give rise to a significant improvement in modulator design. We have theoretically investigated the AEM effect in In x Ga 1-x As/InP quantum well structures with x x Ga 1-x As quantum wells are under tension in such structures, hence the required light hole up band configuration can be achieved

Crystal field splitting and spin states of Co ions in cobalt ferrite with composition Co1.5Fe1.5O4 using magnetization and X-ray absorption spectroscopy measurements

Science.gov (United States)

Sinha, A. K.; Singh, M. N.; Achary, S. N.; Sagdeo, A.; Shukla, D. K.; Phase, D. M.

2017-08-01

Structural, magnetic and electronic properties of partially inverted Cobalt Ferrite with composition Co1.5Fe1.5O4 is discussed in the present work. Single phase (SG: Fd3m) sample is synthesized by co-precipitation technique and subsequent air annealing. The values of saturation magnetization obtained from careful analysis of approach to saturation in initial M(H) curves are used to determine spin states of Co ions in tetrahedral (TH) and octahedral (OH) sites. Spin states of Co3+ ions in TH sites, which has not been reported in literature, were found to be in high spin state. Temperature variation of magnetic parameters has been studied. The sample shows magneto-crystalline anisotropy with two clearly distinct pinning centers. Oxygen K-edge and Fe as well as Co L2,3-edge X-ray absorption (XAS) spectra have been used as complementary measurements to study crystal field splitting and core hole effects on transition metal (TM) 3d orbitals. The ratio of intensities of t2g and eg absorption bands in O-K edge XAS spectrum is used to estimate the spin states of Co ions at OH and TH sites. The results are in agreement with those obtained from magnetization data, and favors Co3+ ions in TH sites in high spin states. Normalized areas of the satellite peaks in TM L2,3-edge XAS spectra have been used to estimate 3dn+1L contribution in ground state wave function and the contributions were found to be significant.

Crystal field splitting and spin states of Co ions in cobalt ferrite with composition Co{sub 1.5}Fe{sub 1.5}O{sub 4} using magnetization and X-ray absorption spectroscopy measurements

Energy Technology Data Exchange (ETDEWEB)

Sinha, A.K., E-mail: anil@rrcat.gov.in [HXAL, Synchrotrons Utilization Section, RRCAT, Indore 452013 (India); Homi Bhabha National Institute, RRCAT, Indore 452013 (India); Singh, M.N. [HXAL, Synchrotrons Utilization Section, RRCAT, Indore 452013 (India); Achary, S.N. [Chemistry Division, BARC, Anushaktinagar, Mumbai 400085 (India); Sagdeo, A. [HXAL, Synchrotrons Utilization Section, RRCAT, Indore 452013 (India); Homi Bhabha National Institute, RRCAT, Indore 452013 (India); Shukla, D.K.; Phase, D.M. [UGC-DAE Consortium for Scientific Research, Indore 452010 (India)

2017-08-01

Highlights: • Co ions in Co{sub 1.5}Fe{sub 1.5}O{sub 4} are found to be in high spin states. • XAS measurements have been used to estimate TM crystal field and core hole contributions to 3d orbital splitting. • The polycrystalline Co{sub 1.5}Fe{sub 1.5}O{sub 4} sample show two pinning centers and large magneto crystalline anisotropy. - Abstract: Structural, magnetic and electronic properties of partially inverted Cobalt Ferrite with composition Co{sub 1.5}Fe{sub 1.5}O{sub 4} is discussed in the present work. Single phase (SG: Fd3m) sample is synthesized by co-precipitation technique and subsequent air annealing. The values of saturation magnetization obtained from careful analysis of approach to saturation in initial M(H) curves are used to determine spin states of Co ions in tetrahedral (T{sub H}) and octahedral (O{sub H}) sites. Spin states of Co{sup 3+} ions in T{sub H} sites, which has not been reported in literature, were found to be in high spin state. Temperature variation of magnetic parameters has been studied. The sample shows magneto-crystalline anisotropy with two clearly distinct pinning centers. Oxygen K-edge and Fe as well as Co L{sub 2,3}-edge X-ray absorption (XAS) spectra have been used as complementary measurements to study crystal field splitting and core hole effects on transition metal (TM) 3d orbitals. The ratio of intensities of t{sub 2g} and e{sub g} absorption bands in O-K edge XAS spectrum is used to estimate the spin states of Co ions at O{sub H} and T{sub H} sites. The results are in agreement with those obtained from magnetization data, and favors Co{sup 3+} ions in T{sub H} sites in high spin states. Normalized areas of the satellite peaks in TM L{sub 2},{sub 3}-edge XAS spectra have been used to estimate 3d{sub n+1}L contribution in ground state wave function and the contributions were found to be significant.

Chemical inhomogeneity in InxGa1-xN and ZnO. A HRTEM study on atomic scale clustering

International Nuclear Information System (INIS)

Bartel, T.P.

2008-01-01

Nanostructuration as well as the nucleation and growth of nanoparticles pervades the development of modern materials and devices. Quantitative high resolution transmission electron microscopy (HRTEM) is currently being developed for a structural and chemical analysis at an atomic scale. It is used in this thesis to study the chemical inhomogeneity and clustering in In x Ga 1-x N, InN and ZnO. A methodology for reliable quantitative HRTEM is rst de ned: it necessitates a damage free sample, the avoidance of electron beam damage and the control of microscope instabilities. With these conditions satis ed, the reliability of quantitative HRTEM is demonstrated by an accurate measurement of lattice relaxation in a thin TEM sample. Clustering in an alloy can then be distinguished from a random distribution of atoms. In In x Ga 1-x N for instance, clustering is detected for concentrations x>0.1. The sensitivity is insufficient to determine whether clustering is present for lower concentrations. HRTEM allows to identify the amplitude and the spatial distribution of the decomposition which is attributed to a spinodal decomposition. In InN, nanometer scale metallic indium inclusions are detected. With decreasing size of the metallic clusters, the photoluminescence of the sample shifts towards the infrared. This indicates that the inclusions may be responsible for the infrared activity of InN. Finally, ZnO grown homoepitaxially on zinc-face and oxygen-face substrates is studied. The O-face epilayer is strained whereas the Zn-face epilayer is almost strain free and has a higher crystalline quality. Quantitative analysis of exit wave phases is in good agreement with simulations, but the signal to noise ratio needs to be improved for the detection of single point defects. (orig.)

Spin injection into semiconductors: the role of Fe/AlxGa1-xAs interface

International Nuclear Information System (INIS)

Fitzsimmons, M.R.; Park, S.

2004-01-01

The influence of the growth and post-growth annealing temperatures of Fe/Al x Ga 1-x As-based spin light-emitting diodes (LEDs) on the spin injection efficiency is discussed. The extent of interfacial reactions during molecular beam epitaxial growth of Fe on GaAs was determined from in-situ x-ray photoelectron spectroscopy studies. The Fe/GaAs interface results in ≤ 3 monolayers of reaction for Fe grown at -15 C. Intermediate growth temperatures (95 C) lead to ∼5 monolayers of interfacial reactions, and high growth temperatures of 175 C lead to a ∼9 monolayer thick reacted layer. Polarized neutron reflectivity was used to determine the interfacial magnetic properties of epitaxial Fe 0.5 Co 0.5 /GaAs heterostructures grown under identical conditions. No interfacial magnetic dead layer is detected at the interface for Fe 0.5 Co 0.5 films grown at -15 C, an ∼6 (angstrom) thick nonmagnetic layer formed at the interface for 95 C growth and an ∼5 (angstrom) thick magnetic interfacial reacted layer formed for growth at 175 C. Spin injection from Fe contacts into spin LEDs decreases sharply when reactions result in a nonmagnetic interfacial layer. Significant spin injection signals are obtained from Fe contacts grown between -5 C and 175 C, although the higher Fe growth temperatures resulted in a change in the sign of the spin polarization. Post-growth annealing of the spin LEDs is found to increase spin injection efficiency for low Fe growth temperatures and to a sign reversal of the spin polarization for high growth temperature (175 C). An effective Schottky barrier height increase indicates that post growth annealing modifies the Fe/Al x Ga 1-x As interface.

Optical properties of InxGa1-xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

International Nuclear Information System (INIS)

Fang, Hsin-Chiao; Liu, Chuan-Pu; Dhara, Sandip

2011-01-01

Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga + ions with fluences of 1 x 10 16 -1.5 x 10 17 cm -2 followed by post-annealing treatment at 750 o C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga + -implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In x Ga 1-x P phase is formed at a critical fluence of 7 x 10 16 cm -2 . The newly grown phase was identified with the appearance of Ga rich TO InP and In rich TO GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.

Energy levels of GaAs/Al{sub x}Ga{sub 1-x}As/AlAs spherical quantum dot with an impurity

Energy Technology Data Exchange (ETDEWEB)

Boz, Figen Karaca, E-mail: figenb@trakya.edu.tr; Nisanci, Beyza; Aktas, Saban; Okan, S. Erol

2016-11-30

Highlights: • Energy levels and probability distribution of an electron in GaAs/AlxGa1-xAs/AlAs spherical quantum dot were calculated. • The size effects on the electronic binding energy were determined within a core/shell/shell model. • The differences between the impurity energies of the first and the second levels are detected. - Abstract: We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/Al{sub x}Ga{sub 1-x}As/AlAs. The numerical method used is the fourth-order Runge–Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of Al{sub x}Ga{sub 1-x}As spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/Al{sub x}Ga{sub 1-x}As/AlAs quantum dot.

Dimensionality effects on magnetic properties of FexCo1-x nanoclusters on Pt(1 1 1)

Science.gov (United States)

Miranda, I. P.; Igarashi, R. N.; Klautau, A. B.; Petrilli, H. M.

2017-11-01

The behavior of local magnetic moments and exchange coupling parameters of FexCo1-x nanostructures (nanowires and compact clusters) on the fcc Pt(1 1 1) surface is here investigated using the first-principles real-space RS-LMTO-ASA method, in the framework of the DFT. Different configurations of FexCo1-x trimers and heptamers on Pt(1 1 1) are considered, varying the positions and the concentration of Fe or Co atoms. We discuss the influence of dimensionality and stoichiometry changes on the magnetic properties, specially on the orbital moments, which are very important in establishing a nanoscopic understanding of delocalized electron systems. We demonstrate the existence of a strictly decreasing nonlinear trend of the average orbital moments with the Fe concentration for the compact clusters, different from what was found for FexCo1-x nanowires on Pt(1 1 1) and also for corresponding higher-dimensional systems (FexCo1-x monolayer on Pt(1 1 1) and FexCo1-x bulk). The average spin moments, however, are invariably described by a linear function with respect to stoichiometry. In all studied cases, the nearest neighbors exchange couplings have shown to be strongly ferromagnetic.

Structure-composition sensitivity in 'Metallic' Zintl phases: A study of Eu(Ga1-xTtx)2 (Tt=Si, Ge, 0≤x≤1)

International Nuclear Information System (INIS)

You, Tae-Soo; Zhao Jingtai; Poettgen, Rainer; Schnelle, Walter; Burkhardt, Ulrich; Grin, Yuri; Miller, Gordon J.

2009-01-01

Two isoelectronic series, Eu(Ga 1-x Tt x ) 2 (Tt=Si, Ge, 0≤x≤1), have been synthesized and characterized by powder and single-crystal X-ray diffraction, physical property measurements, and electronic structure calculations. In Eu(Ga 1-x Si x ) 2 , crystal structures vary from the KHg 2 -type to the AlB 2 -type, and, finally, the ThSi 2 -type structure as x increases. The hexagonal AlB 2 -type structure is identified for compositions 0.18(2)≤x 3 nets. As smaller Si atoms replace Ga atoms while the number of valence electrons increases, the lattice parameters, unit cell volumes, and Ga-Si distances in this phase region decrease significantly. Although aspects of X-ray diffraction results suggest puckering of the 6 3 nets for the Si-richest example of the AlB 2 -type Eu(Ga 1-x Si x ) 2 , the complete experimental evidence remains inconclusive. On the other hand, in Eu(Ga 1-x Ge x ) 2 , six different structural types were observed as x varies. In addition to EuGa 2 (KHg 2 -type; space group Imma) and EuGe 2 (own structure type, space group P3-barm1), the ternary phases studied show four different structures: the AlB 2 -type for Ga-rich compositions; the YPtAs-type structure for EuGaGe; and two new structures, which are intergrowths of the YPtAs-type EuGaGe and EuGe 2 , for Ge-rich compositions. These two Ge-rich phases include: (1) Eu(Ga 0.45(2) Ge 0.55(2) ) 2 containing two YPtAs-type motifs of EuGaGe plus one EuGe 2 motif; and (2) Eu(Ga 0.40(2) Ge 0.60(2) ) 2 containing one YPtAs-type motif alternating with a split site at x=2/3 ,y=1/3 and z=0.4798(2) with ca. 50% site occupancy by Ga and Ge along the c-axis. Magnetic susceptibilities of three Eu(Ga 1-x Ge x ) 2 compounds display Curie-Weiss behavior above ca. 100 K, and show effective magnetic moments indicative of divalent Eu with a 4f 7 electronic configuration, consistent with. X-ray absorption spectra (XAS). Density of states (DOS) and crystal orbital Hamilton population (COHP) analyses, based on first

Development of Ta-based Superconducting Tunnel Junction X-ray Detectors for Fluorescence XAS

International Nuclear Information System (INIS)

Friedrich, S.; Drury, O.; Hall, J.; Cantor, R.

2009-01-01

We are developing superconducting tunnel junction (STJ) soft X-ray detectors for chemical analysis of dilute samples by fluorescence-detected X-ray absorption spectroscopy (XAS). Our 36-pixel Nb-based STJ spectrometer covers a solid angle (Omega)/4π ∼ 10 -3 , offers an energy resolution of ∼10-20 eV FWHM for energies up to ∼1 keV, and can be operated at total count rates of ∼10 6 counts/s. For increased quantum efficiency and cleaner response function, we have now started the development of Ta-based STJ detector arrays. Initial devices modeled after our Nb-based STJs have an energy resolution below 10 eV FWHM for X-ray energies below 1 keV, and pulse rise time discrimination can be used to improve their response function for energies up to several keV. We discuss the performance of the Ta-STJs and outline steps towards the next-generation of large STJ detector arrays with higher sensitivity.

Magic clusters and (2x1) local structure formed in a half-unit cell of the Si(1 1 1)-(7x7) surface by Tl adsorption

International Nuclear Information System (INIS)

Kocan, P.; Visikovskiy, A.V.; Ohira, Y.; Yoshimura, M.; Ueda, K.; Tochihara, H.

2008-01-01

Formation of a (2x1) local structure is found at submonolayer growth of Tl on the Si(1 1 1)-(7x7) surface by means of scanning tunneling microscopy (STM). At low coverages, the (7x7) grid remains and the (2x1) structure is formed inside of the half-unit cells of the (7x7). The (2x1) coexists with other structures, such as of 'magic' clusters observed in the case of all other group III metals. Based on our STM observations we propose an atomic arrangement of the (2x1) structure

Ranked solutions of the matric equation A1X1=A2X2

Directory of Open Access Journals (Sweden)

A. Duane Porter

1980-01-01

Full Text Available Let GF(pz denote the finite field of pz elements. Let A1 be s×m of rank r1 and A2 be s×n of rank r2 with elements from GF(pz. In this paper, formulas are given for finding the number of X1,X2 over GF(pz which satisfy the matric equation A1X1=A2X2, where X1 is m×t of rank k1, and X2 is n×t of rank k2. These results are then used to find the number of solutions X1,…,Xn, Y1,…,Ym, m,n>1, of the matric equation A1X1…Xn=A2Y1…Ym.

Synthesis and structural properties of n = 1 Ruddlesden-Popper manganites Nd1-xCa1+xMnO4

International Nuclear Information System (INIS)

Nagai, T.; Yamazaki, A.; Kimoto, K.; Matsui, Y.

2008-01-01

Polycrystalline samples of n = 1 Ruddlesden-Popper manganites Nd 1-x Ca 1+x MnO 4 (0.55 ≤ x ≤ 1.00) were synthesized by a solid-state reaction. X-ray diffraction (XRD) and electron diffraction (ED) measurements confirmed that the fundamental crystal structure at room temperature consists of three distorted K 2 NiF 4 -types: orthorhombic Bmab (64) phase in 0.55 ≤ x 1 /acd (142) phase in 0.85 ≤ x ≤ 1.00. Furthermore, in a whole range of 0.55 ≤ x ≤ 0.75, low-temperature magnetic and ED measurements revealed charge-orbital ordering (COO) states, which are accompanied by suppression of magnetization and structural modulations with q = (1 - x)a*. The COO transition temperatures are high with a maximum of ∼330 K at x = 0.67, and then higher than those in non-distorted n = 1 Ruddlesden-Popper manganites. The observations suggest that COO states are much stabilized by the distortion in the fundamental structures

New view on In{sub x}Ga{sub 1-x}N{sub y}As{sub 1-y}alloys

Energy Technology Data Exchange (ETDEWEB)

Elyukhin, Vyacheslav A. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Avenida Instituto Politecnico Nacional 2508, 07360, Mexico (Mexico)

2015-12-15

Semiconductors with isoelectronic centers are actively studied to fabricate arrays of identical single photon emitters. Self-assembling of 4N10In and 1N4In clusters in GaAs-rich In{sub x}Ga{sub 1-x}N{sub y}As{sub 1-y} is represented. All or almost all In atoms are in 4N10In clusters from 0 to 800 C in In{sub x}Ga{sub 1-x}N{sub y}As{sub 1-y} with x = 1 x 10{sup -4}, y = 1 x 10{sup -4} and x = 1 x 10{sup -5}, y = 1 x 10{sup -5}. All or almost all nitrogen atoms are in 1N4In clusters if x = 0.01, y = 1 x 10{sup -4} and x = 1 x 10{sup -3}, y = 1 x 10{sup -6}. There are both types of clusters in alloys with x = 5 x 10{sup -5}, y = 5 x 10{sup -7}; x = 2 x 10{sup -4}, y = 2 x 10{sup -6}; x = 1 x 10{sup -4}, y = 1 x 10{sup -5} and x = 2 x 10{sup -3}, y = 2 x 10{sup -4} and portions of nitrogen atoms in clusters depend on the composition and temperature. Thus, In{sub x}Ga{sub 1-x}N{sub y}As{sub 1-y} are promising semiconductors to obtain arrays of identical isoelectronic clusters with the desirable density. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

On Positive Solutions for the Rational Difference Equation Systems x n+1 = A/x n y n (2), and y n+1 = By n /x n-1 y n-1.

Science.gov (United States)

Ma, Hui-Li; Feng, Hui

2014-01-01

Our aim in this paper is to investigate the behavior of positive solutions for the following systems of rational difference equations: x n+1 = A/x n y n (2), and y n+1 = By n /x n-1 y n-1, n = 0,1,…, where x -1, x 0, y -1, and y 0 are positive real numbers and A and B are positive constants.

Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

Science.gov (United States)

Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

2014-12-05

Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

Magnetic phase diagram of ErGe 1-xSi x (0<x<1)

Science.gov (United States)

Thuéry, P.; El Maziani, F.; Clin, M.; Schobinger-Papamantellos, P.; Buschow, K. H. J.

1993-10-01

The composition-temperature magnetic phase diagram of ErGe 1- xSi x (0 0.40. For 0.17 ≥ x ≤ 0.55, a first-order transition occurs as function of the temperature between these two phases. For x ≥ 0.65, a lock-in transition takes place at TIC, leading from the wavevector ( k' x,0, k' z) to (1/2,0,1/2), as was already observed in ErSi. Finally, for x < 0.17 or 0.55 < x < 0.65, the wavevectors of the incommensurate phases characterized by (0,0, kz) or ( k' x,0, k' z) respectively remain unchanged in the whole temperature range below TN. For x≥0.65, a small amount of a magnetic phase characterized by the wavevector (0,0, 1/2) coexists with the main phases, below a Néel temperature T' N slightly lower than TN. In all cases, the erbium magnetic moments are colinear along the orthorhombic α-axis; the arrangement of the moments in the commensurate phases is the same as in ErSi and the incommensurate orderings correspond to sine-wave amplitude modulations. A brief account on the theoretical interpretation of this phase diagram is finally given.

The Application of CPA to Calculations of the Mean Magnetic Moment in the Gd1-xNi, Gd1-xFe, Gd1xCox, and Y1-xCox Intermetallic Compounds

DEFF Research Database (Denmark)

Szpunar, B.; Kozarzewski, B.

1977-01-01

with a narrow d-band is considered. The magnetic moment of the alloy at zero temperature is calculated within the molecular field and Hartree-Fock approximations. Disorder is treated in the coherent potential approximation. Results are in good agreement with the experimental data obtained for the crystalline......Calculations are made of the mean magnetic moment per atom of the transition metal and the rare-earth metal in the intermetallic compounds, Gd1-x,Nix, Gd1-x Fex, Gd1-x Cox, and Y1-x Cox. A simple model of the disordered alloy consisting of spins localized on the rare-earth atoms and interacting...

X-1E on Lakebed

Science.gov (United States)

1955-01-01

The Bell Aircraft Corporation X-1E in 1955 on the Rogers Dry Lakebed near the NACA High-Speed Flight Station, Edwards, California. The X-1E was notable for being shorter, with a thinner wing than the X-1A, -B, and -D. Aerodynamic heating caused the ailerons, rudder, and elevators to remain unpainted throughout the X-1E's flight test program. When the ventral fins were added, they were left unpainted too. On August 31, 1956, the aircraft reached a top speed of 1,480 miles per hour (Mach 2.24). There were four versions of the Bell X-1 rocket-powered research aircraft that flew at the NACA High-Speed Flight Research Station, Edwards, California. The bullet-shaped X-1 aircraft were built by Bell Aircraft Corporation, Buffalo, N.Y. for the U.S. Army Air Forces (after 1947, U.S. Air Force) and the National Advisory Committee for Aeronautics (NACA). The X-1 Program was originally designated the XS-1 for EXperimental Supersonic. The X-1's mission was to investigate the transonic speed range (speeds from just below to just above the speed of sound) and, if possible, to break the 'sound barrier.' Three different X-1s were built and designated: X-1-1, X-1-2 (later modified to become the X-1E), and X-1-3. The basic X-1 aircraft were flown by a large number of different pilots from 1946 to 1951. The X-1 Program not only proved that humans could go beyond the speed of sound, it reinforced the understanding that technological barriers could be overcome. The X-1s pioneered many structural and aerodynamic advances including extremely thin, yet extremely strong wing sections; supersonic fuselage configurations; control system requirements; powerplant compatibility; and cockpit environments. The X-1 aircraft were the first transonic-capable aircraft to use an all-moving stabilizer. The flights of the X-1s opened up a new era in aviation. The first X-1 was air-launched unpowered from a Boeing B-29 Superfortress on January 25, 1946. Powered flights began in December 1946. On October 14

Donor impurity-related linear and nonlinear optical absorption coefficients in GaAs/Ga{sub 1−x}Al{sub x}As concentric double quantum rings: Effects of geometry, hydrostatic pressure, and aluminum concentration

Energy Technology Data Exchange (ETDEWEB)

Baghramyan, H.M.; Barseghyan, M.G.; Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Restrepo, R.L. [Física Teórica y Aplicada, Escuela de Ingeniería de Antioquia, AA 7516, Medellín (Colombia); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia)

2014-01-15

The linear and nonlinear optical absorption associated with the transition between 1s and 2s states corresponding to the electron-donor-impurity complex in GaAs/Ga{sub 1−x}Al{sub x}As three-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and the variation of the aluminum concentration, the energies of the ground and first excited s-like states of a donor impurity in such a system have been calculated using the effective mass approximation and a variational method. The energies of these states and the corresponding threshold energy of the optical transitions are examined as functions of hydrostatic pressure, aluminum concentration, radial impurity position, as well as the geometrical dimensions of the structure. The dependencies of the linear, nonlinear and total optical absorption coefficients as functions of the incident photon energy are investigated for different values of those mentioned parameters. It is found that the influences mentioned above lead to either redshifts or blueshifts of the resonant peaks of the optical absorption spectrum. It is particularly discussed the unusual property exhibited by the third-order nonlinear of becoming positive for photon energies below the resonant transition one. It is shown that this phenomenon is associated with the particular features of the system under study, which determine the values of the electric dipole moment matrix elements. -- Highlights: • Intra-band optical absorption associated to impurity states in double quantum rings. • Combined effects of hydrostatic pressure and aluminum concentration are studied. • The influences mentioned above lead to shifts of resonant peaks. • It is discussed an unusual property exhibited by the third-order nonlinear absorption.

Synthesis and Structural Characterization of Silver Nanoparticles Stabilized with 3-Mercapto-1-Propansulfonate and 1-Thioglucose Mixed Thiols for Antibacterial Applications

Science.gov (United States)

Porcaro, Francesco; Carlini, Laura; Ugolini, Andrea; Visaggio, Daniela; Visca, Paolo; Fratoddi, Ilaria; Venditti, Iole; Meneghini, Carlo; Simonelli, Laura; Marini, Carlo; Olszewski, Wojciech; Ramanan, Nitya; Luisetto, Igor; Battocchio, Chiara

2016-01-01

The synthesis, characterization and assessment of the antibacterial properties of hydrophilic silver nanoparticles (AgNPs) were investigated with the aim to probe their suitability for innovative applications in the field of nanobiotechnology. First, silver nanoparticles were synthetized and functionalized with two capping agents, namely 3-mercapto-1-propansulfonate (3MPS) and 1-β-thio-d-glucose (TG). The investigation of the structural and electronic properties of the nano-systems was carried out by means of X-ray Photoelectron Spectroscopy (XPS) and X-ray Absorption Spectroscopy (XAS). XPS data provided information about the system stability and the interactions between the metallic surface and the organic ligands. In addition, XPS data allowed us to achieve a deep understanding of the influence of the thiols stoichiometric ratio on the electronic properties and stability of AgNPs. In order to shed light on the structural and electronic local properties at Ag atoms sites, XAS at Ag K-Edge was successfully applied; furthermore, the combination of Dynamic Light Scattering (DLS) and XAS results allowed determining AgNPs sizes, ranging between 3 and 13 nm. Finally, preliminary studies on the antibacterial properties of AgNPs showed promising results on four of six multidrug-resistant bacteria belonging to the ESKAPE group (Enterococcus faecium, Staphylococcus aureus, Klebsiella pneumoniae, Acinetobacter baumannii, Pseudomonas aeruginosa, and Enterobacter sp.). PMID:28774148

An XAS experimental approach to study low Pt content electrocatalysts operating in PEM fuel cells.

Science.gov (United States)

Principi, Emiliano; Witkowska, Agnieszka; Dsoke, Sonia; Marassi, Roberto; Di Cicco, Andrea

2009-11-21

We present an X-ray absorption spectroscopy (XAS) study of a low Pt content catalyst layer (Pt loading 0.1 mg cm(-2)) operating at the cathode of a proton exchange membrane fuel cell (PEMFC). This catalyst is based on the use of a mesoporous inorganic matrix as a support for the catalyst Pt nanoparticles. Due to the high Pt dilution, in situ measurements of its structural properties by XAS are challenging and suitable experimental strategies must be devised for this purpose. In particular, we show that accurate XAS in situ fluorescence measurements can be obtained using an optimized fuel cell, suitable protocols for alignment of a focused X-ray beam and an appropriate filter for the background signal of the other atomic species contained in the electrodes. Details, advantages and limitations of the XAS technique for in situ measurements are discussed. Analysis of the near-edge XAS and EXAFS (extended X-ray absorption fine structure) data, corroborated by a HRTEM (high-resolution transmission electron microscopy) study, shows that the Pt particles have a local structure compatible with that of bulk Pt (fcc) and coordination numbers match those expected for particles with typical sizes in the 1.5-2.0 nm range. Substantial changes in the oxidation state and in local atomic arrangement of the Pt particles are found for different applied potentials. The catalyst support, containing W atoms, exhibits a partial reduction upon PEMFC activation, thus mimicking the catalyst behavior. This indicates a possible role of the mesoporous matrix in favouring the oxygen reduction reaction (ORR) and stimulates further research on active catalyst supports.

Long-term studies with the Ariel-5 asm. 1: Her X-1, Vela X-1 and Cen X-3. [periodic variations

Science.gov (United States)

Holt, S. S.; Kaluzienski, L. J.; Boldt, E. A.; Serlemitsos, P. J.

1978-01-01

Twelve hundred days of 3-6 keV X-ray data from Her X-1, Vela X-1 and Cen X-3 accumulated with the Ariel-5 all-sky monitor are interrogated. The binary periodicities of all three can be clearly observed, as can the approximately 35-d variation of Her X-1, for which we can refine the period to 34.875 plus or minus .030-d. No such longer-term periodicity less than 200-d is observed from Vela X-1. The 26.6-d low-state recurrence period for Cen X-3 previously suggested is not observed, but a 43.0-d candidate periodicity is found which may be consistent with the precession of an accretion disk in that system. The present results are illustrative of the long-term studies which can be performed on approximately 50 sources over a temporal base which will ultimately extend to at least 1800 days.

U(1) x U(1) x U(1) symmetry of the Kimura 3ST model and phylogenetic branching processes

International Nuclear Information System (INIS)

Bashford, J D; Jarvis, P D; Sumner, J G; Steel, M A

2004-01-01

An analysis of the Kimura 3ST model of DNA sequence evolution is given on the basis of its continuous Lie symmetries. The rate matrix commutes with a U(1) x U(1) x U(1) phase subgroup of the group GL(4) of 4 x 4 invertible complex matrices acting on a linear space spanned by the four nucleic acid base letters. The diagonal 'branching operator' representing speciation is defined, and shown to intertwine the U(1) x U(1) x U(1) action. Using the intertwining property, a general formula for the probability density on the leaves of a binary tree under the Kimura model is derived, which is shown to be equivalent to established phylogenetic spectral transform methods. (letter to the editor)

Superconducting properties of Zr1+xNi2-xGa and Zr1-xNi2+xGa Heusler compounds

Directory of Open Access Journals (Sweden)

Saad Alzahrani

2017-05-01

Full Text Available The superconducting properties of a series of Zr1+xNi2-xGa and Zr1-xNi2+xGa compounds have been investigated by x-ray diffraction, electrical resistivity, dc magnetization, and ac susceptibility measurements. While the parent compound, ZrNi2Ga, exhibited the cubic L21 Heusler structure, multiple non-cubic structures formed in the Zr and Ni rich doped materials. For x ≤ 0.3, all Zr1-xNi2+xGa compounds demonstrated superconducting behavior, but no superconductivity was observed in the Zr1+xNi2-xGa alloys for x > 0.2. The magnetization data revealed that all materials in both Zr1+xNi2-xGa and Zr1-xNi2+xGa series exhibited type-II superconductivity. With increasing doping concentration x, the paramagnetic ordering were enhanced in both systems while the superconducting properties were found to weaken. The observations are discussed considering the structural disorders in the systems.

Structural, magnetic and transport properties of Pb{sub 2}Cr{sub 1+x}Mo{sub 1−x}O{sub 6} (−1≤x≤1/3)

Energy Technology Data Exchange (ETDEWEB)

Zhao, H.F. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); School of Mathematics and Physics, University of Science and Technology, Beijing 100083 (China); Cao, L.P. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Song, Y.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); School of Mathematics and Physics, University of Science and Technology, Beijing 100083 (China); Feng, S.M.; Shen, X. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Ni, X.D. [School of Mathematics and Physics, University of Science and Technology, Beijing 100083 (China); Yao, Y.; Wang, Y.G. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, R.M. [School of Mathematics and Physics, University of Science and Technology, Beijing 100083 (China); Jin, C.Q. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yu, R.C., E-mail: rcyu@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049 (China)

2017-02-15

Pb{sub 2}Cr{sub 1+x}Mo{sub 1-x}O{sub 6} (−1≤x≤1/3) samples were synthesized via a high pressure and high temperature route. X-ray diffraction results suggest the samples crystallize in a disordered double perovskite structure (Pm-3m). X-ray photoemission spectroscopy results confirm the presence of Mo{sup 4+} for x=−1 and Mo{sup 6+} for x=1/3. The measured magnetic and electrical properties exhibit systematic change with increasing x. - Highlights: • A series of Pb{sub 2}Cr{sub 1+x}Mo{sub 1−x}O{sub 6} samples were synthesized under high pressure. • Magnetic and electrical properties of the series samples were investigated. • Valence states of Cr and Mo were determined through the analyses of XRD and XPS results. • Ground state of PbMoO{sub 3} were determined through the transport study and first-principles calculations.

Detailed studies of a high-capacity electrode material for rechargeable batteries, Li2MnO3-LiCo(1/3)Ni(1/3)Mn(1/3)O2.

Science.gov (United States)

Yabuuchi, Naoaki; Yoshii, Kazuhiro; Myung, Seung-Taek; Nakai, Izumi; Komaba, Shinichi

2011-03-30

Lithium-excess manganese layered oxides, which are commonly described by the chemical formula zLi(2)MnO(3)-(1-z)LiMeO(2) (Me = Co, Ni, Mn, etc.), are of great importance as positive electrode materials for rechargeable lithium batteries. In this Article, Li(x)Co(0.13)Ni(0.13)Mn(0.54)O(2-δ) samples are prepared from Li(1.2)Ni(0.13)Co(0.13)Mn(0.54)O(2) (or 0.5Li(2)MnO(3)-0.5LiCo(1/3)Ni(1/3)Mn(1/3)O(2)) by an electrochemical oxidation/reduction process in an electrochemical cell to study a reaction mechanism in detail before and after charging across a voltage plateau at 4.5 V vs Li/Li(+). Changes of the bulk and surface structures are examined by synchrotron X-ray diffraction (SXRD), X-ray absorption spectroscopy (XAS), X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectroscopy (SIMS). SXRD data show that simultaneous oxygen and lithium removal at the voltage plateau upon initial charge causes the structural rearrangement, including a cation migration process from metal to lithium layers, which is also supported by XAS. This is consistent with the mechanism proposed in the literature related to the Li-excess manganese layered oxides. Oxygen removal associated with the initial charge on the high voltage plateau causes oxygen molecule generation in the electrochemical cells. The oxygen molecules in the cell are electrochemically reduced in the subsequent discharge below 3.0 V, leading to the extra capacity. Surface analysis confirms the formation of the oxygen containing species, such as lithium carbonate, which accumulates on the electrode surface. The oxygen containing species are electrochemically decomposed upon second charge above 4.0 V. The results suggest that, in addition to the conventional transition metal redox reactions, at least some of the reversible capacity for the Li-excess manganese layered oxides originates from the electrochemical redox reaction of the oxygen molecules at the electrode surface.

Atmospheric chemistry of n-CxF2x+1CHO (x = 1, 2, 3, 4)

DEFF Research Database (Denmark)

Hurley, M. D.; Ball, J. C.; Wallington, T. J.

2006-01-01

Smog chamber/FTIR techniques were used to study the atmospheric fate of n-C(x)F(2)(x)(+1)C(O) (x = 1, 2, 3, 4) radicals in 700 Torr O(2)/N(2) diluent at 298 +/- 3 K. A competition is observed between reaction with O(2) to form n-C(x)()F(2)(x)()(+1)C(O)O(2) radicals and decomposition to form n-C(x...... to the atmospheric chemistry of n-C(x)F(2)(x)(+1)C(O) radicals and their possible role in contributing to the formation of perfluorocarboxylic acids in the environment....

Arithmetically Cohen-Macaulay sets of points in P^1 x P^1

CERN Document Server

Guardo, Elena

2015-01-01

This brief presents a solution to the interpolation problem for arithmetically Cohen-Macaulay (ACM) sets of points in the multiprojective space P^1 x P^1.  It collects the various current threads in the literature on this topic with the aim of providing a self-contained, unified introduction while also advancing some new ideas.  The relevant constructions related to multiprojective spaces are reviewed first, followed by the basic properties of points in P^1 x P^1, the bigraded Hilbert function, and ACM sets of points.  The authors then show how, using a combinatorial description of ACM points in P^1 x P^1, the bigraded Hilbert function can be computed and, as a result, solve the interpolation problem.  In subsequent chapters, they consider fat points and double points in P^1 x P^1 and demonstrate how to use their results to answer questions and problems of interest in commutative algebra.  Throughout the book, chapters end with a brief historical overview, citations of related results, and, where relevan...

The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

International Nuclear Information System (INIS)

Zhang, Shiyan; Mei, Dajiang; Du, Xin; Lin, Zheshuai; Zhong, Junbo; Wu, Yuandong; Xu, Jingli

2016-01-01

Ag 1−x Ga 1−x Si x Se 2 solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe 4 has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe 4 is composed of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ga) tetrahedra. AgGaSiSe 4 is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe 4 and the value is 0.33 eV larger than that of Ag 3 Ga 3 SiSe 8 (2.30 eV). - Graphical abstract: The Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe 4 was synthesized for the first time. AgGaSiSe 4 crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe 4 . • AgGaSiSe 4 crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe 4 is enlarged compared with Ag 3 Ga 3 SiSe 8 .

An electrochemical study of the systems Li1+-xV2O4 and Li1-xVO2 (0≤x≤1)

International Nuclear Information System (INIS)

De Picciotto, L.A.; Thackeray, M.M.; Pistoia, G.

1988-01-01

Electrochemical properties of the systems Li 1±x V 2 O 4 (0≤x≤1), Li 1-x VO 2 (0≤x 2 O 4 is reversible, which confirms that lithium may be cycled, topotactically, in and out of the Li 1+x V 2 O 4 spinel structure. Delithiation of the LiV 2 O 4 spinel is irreversible; during this process the vanadium ions migrate through the oxide layers. This results in a defect rocksalt phase, which can, in turn, be relithiated by a different mechanism. Lithium extraction for the layered compound LiVO 2 yields a structure similar to the delithiated LiV 2 O 4 product. The spinel-derived compounds Li 1 +-x/V 2 O 4 (0 -3 Ω -1 cm -1 at x=0 and 10 -6 Ω -1 cm -1 at x=1. Lithium diffusion rates in Li 1±x V 2 O 4 samples increase with lithiation from D=4x10 -10 cm 2 /s in LiV 2 O 4 to D=6x10 -8 cm 2 /s in Li 2 V 2 O 4 . Intermediate values of D are obtained in the delithiated compound Li 0.28 V 2 O 4 and in the layered oxide LiVO 2 ; significantly lower values of D, viz. 1x10 -11 cm 2 /s and 4x10 -11 cm 2 /s , are found in the spinels LiMn 2 O 4 and Fe 3 O 4 respectively. 28 refs.; 5 figs.; 1 table

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

Science.gov (United States)

Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

2017-10-01

The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

Microwave-induced combustion synthesis and electrical conductivity of Ce1-xGd xO2-1/2x ceramics

International Nuclear Information System (INIS)

Fu, Y.-P.; Chang, Y.-S.; Wen, S.-B.

2006-01-01

Ce 1-x Gd x O 2-1/2x nanopowder were successfully synthesized by microwave-induced combustion process. For the preparation, cerium nitrate, gadolinium nitrate hexahydrate, and urea were used for the microwave-induced combustion process. The process took only 30 min to obtain Ce 1-x Gd x O 2-1/2x powders. The exo-endo temperature, phase identification, and morphology of resultant powders were investigated by TG/DTA, XRD, and SEM. The as-received Ce 1-x Gd x O 2-1/2x powders showed that the average particle size ranged from 18 to 50 nm, crystallite dimension varied from 11 to 20 nm, and the specific surface area was distribution from 16 to 46 m 2 /g. As for Ce 1-x Gd x O 2-1/2x ceramics sintered at 1450 deg. C for 3 h, the bulk density of Ce 1-x Gd x O 2-1/2x ceramics were over 91% of the theoretical density, the maximum electrical conductivity, σ 700deg.C = 0.017 S/cm with minimum activation energy, E a = 0.869 eV was found at Ce 0.80 Gd 0.20 O 1.90 ceramic

Glassy behavior in the layered perovskites La{sub 2-x}Sr{sub x}CoO{sub 4}(1.1{<=}x{<=}1.3)

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, S., E-mail: sanseb68@yahoo.co.in [Department of Physics, University of Burdwan, Burdwan 713104 (India); Mukherjee, Rajarshi [Department .of Physics, University of Burdwan, Burdwan 713104 (India); Banerjee, S.; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700 064 (India); Kumar, Uday [Department of Physical Sciences, Indian Institute of Science Education and Research - Kolkata, Mohonpur 741252 (India)

2012-03-15

The glassy behavior of the phase segregated state in the layered cobaltite La{sub 2-x}Sr{sub x}CoO{sub 4} has been studied. The role of the inter-cluster interactions as well as the disordered spins at the paramagnetic-ferromagnetic interface, behind the observed glassy behavior have been investigated. The disordered spins at the interface appear to be strongly pinned, and they contribute little to the observed glassy behavior. On the other hand, the inter-cluster interactions play the key role. Both the Co{sup 4+} and Co{sup 3+} ions are in the intermediate spin state. - Highlights: Black-Right-Pointing-Pointer Phase segregated state of cobaltite La{sub 2-x}Sr{sub x}CoO{sub 4} for (1.1{<=}x{<=}1.3) to find the origin of the observed glassy behavior. Black-Right-Pointing-Pointer Result of the frequency dependent ac susceptibility measurement excludes the possibility of any spin glass phase, hints strong inter-cluster interactions. Black-Right-Pointing-Pointer Relaxation experiments confirm the system to be a collection of clusters with two preferred sizes. Black-Right-Pointing-Pointer The glassy behavior originates from strong inter-cluster interactions.

Thermal conductivities of (ZrxPu(1-x)/2Am(1-x)/2)N solid solutions

International Nuclear Information System (INIS)

Nishi, Tsuyoshi; Takano, Masahide; Akabori, Mitsuo; Arai, Yasuo

2011-01-01

The thermal conductivity of Zr-based transuranium (TRU) nitride solid solutions is important for designing subcritical cores in nitride-fueled ADS. Some results have been reported concerning the thermal conductivities of (Zr,Pu)N. However, there have been no experimental data on the thermal conductivities of Zr-based nitride solid solutions containing MA. In this study, the authors prepared sintered samples of (Zr x Pu (1-x)/2 Am (1-x)/2) N (x=0.0, 0.58, 0.80) solid solutions. The thermal diffusivity and heat capacity of (Zr x Pu (1-x)/2 Am (1-x)/2) N solid solutions were measured using a laser flash method and drop calorimetry, respectively. Thermal conductivities were determined from the measured thermal diffusivities, heat capacities and bulk densities over a temperature range of 473 to 1473 K. The thermal conductivities of (Zr 0.58 Pu 0.21 Am 0.21 )N and (Zr 0.80 Pu 0.10 Am 0.10 )N solid solutions were found to be higher than that of (Pu 0.5 Am 0.5 )N due to the high thermal conductivity of ZrN as the principal component, although they were lower than that of ZrN due to the impurifying effect of the transuranium elements. Thus, the thermal conductivities of (Zr x Pu (1-x)/2 Am (1-x)/2) N solid solutions increased with increasing ZrN concentration. Moreover, in order to help to promote the design study of nitride-fueled ADS, the thermal conductivity of the (Zr x Pu (1-x)/2 Am (1-x)/2) N solid solutions were fitted to an equation using the least squares method. (author)

When is f(x1,x2,... ,xn)

Indian Academy of Sciences (India)

R. Narasimhan (Krishtel eMaging) 1461 1996 Oct 15 13:05:22

When is f(x1,x2,... ,xn) = u1(x1) + u2(x2) +···+ un(xn)? ... (i) there exist non-zero integers p1,p2,... ,pk such that ..... probability measure for the countable collection of functions 1Ai , i = 1, 2, 3,. .... For question (B) a sufficient condition is that.

Spontaneous core–shell elemental distribution in In-rich InxGa1−xN nanowires grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Gómez-Gómez, M; Garro, N; Cantarero, A; Mengistu, H T; García-Cristóbal, A; Murcia-Mascarós, S; Segura-Ruiz, J; Martinez-Criado, G; Denker, C; Malindretos, J; Rizzi, A

2014-01-01

The elemental distribution of self-organized In-rich In x Ga 1−x N nanowires grown by plasma-assisted molecular beam epitaxy has been investigated using three different techniques with spatial resolution on the nanoscale. Two-dimensional images and elemental profiles of single nanowires obtained by x-ray fluorescence and energy-dispersive x-ray spectroscopy, respectively, have revealed a radial gradient in the alloy composition of each individual nanowire. The spectral selectivity of resonant Raman scattering has been used to enhance the signal from very small volumes with different elemental composition within single nanowires. The combination of the three techniques has provided sufficient sensitivity and spatial resolution to prove the spontaneous formation of a core–shell nanowire and to quantify the thicknesses and alloy compositions of the core and shell regions. A theoretical model based on continuum elastic theory has been used to estimate the strain fields present in such inhomogeneous nanowires. These results suggest new strategies for achieving high quality non-polar heterostructures. (paper)

Phenotype expression in women with CMT1X.

LENUS (Irish Health Repository)

Siskind, Carly E

2011-06-01

Charcot-Marie-Tooth disease type 1X (CMT1X) is the second most common inherited peripheral neuropathy. Women with CMT1X typically have a less severe phenotype than men, perhaps because of X-inactivation patterns. Our objective was to determine the phenotype of women with CMT1X and whether X-inactivation patterns in white blood cells (WBCs) differ between females with CMT1X and controls. Thirty-one women with CMT1X were evaluated using the CMT neuropathy score (CMTNS) and the CMT symptom score in cross-sectional and longitudinal analyses. Lower scores correspond to less disability. WBCs were analyzed for X-inactivation pattern by androgen receptor X-inactivation assay in 14 patients and 23 controls. The 31 women\\'s mean CMTNS was 8.35. Two-thirds of the cohort had a mild CMTNS (mean 4.85) and one-third had a moderate CMTNS (mean 14.73). Three patients had a CMTNS of 0. The pattern of X-inactivation did not differ between the affected and control groups. Women with CMT1X presented with variable impairment independent of age, type of mutation, or location of mutation. No evidence supported the presence of a gap junction beta-1 (GJB1) mutation affecting the pattern of X-inactivation in blood. Further studies are planned to determine whether X-inactivation is the mechanism for CMT1X females\\' variable phenotypes.

A computational study on the energetics and mechanisms for the dissociative adsorption of SiH{sub x}(x = 1–4) on W(1 1 1) surface

Energy Technology Data Exchange (ETDEWEB)

Lin, Y.H.; Raghunath, P.; Lin, M.C., E-mail: chemmcl@emory.edu

2016-01-30

Graphical abstract: - Highlights: • Behavior of the SiH{sub x} species on the W surface under cat-CVD conditions. • The adsorption and dissociation mechanisms of SiH{sub x}(x = 1–4) species on W(1 1 1) surface. • H-migration to its neighboring W atoms is more favorable compared to H{sub 2} elimination. - Abstract: The adsorption and dissociation mechanisms of SiH{sub x}(x = 1–4) species on W(1 1 1) surface have been investigated by using the periodic density functional theory with the projector-augmented wave approach. The adsorption of all the species on four surface sites: top (T), bridge (B), shallow (S), and deep (D) sites have been analyzed. For SiH{sub 4} on a top site, T-SiH{sub 4(a)}, it is more stable with an adsorption energy of 2.6 kcal/mol. For SiH{sub 3}, the 3-fold shallow site is most favorable with adsorption energy of 46.0 kcal/mol. For SiH{sub 2}, its adsorption on a bridge site is most stable with 73.0 kcal/mol binding energy, whereas for SiH and Si the most stable adsorption configurations are on 3-fold deep sites with very high adsorption energies, 111.8 and 134.7 kcal/mol, respectively. The potential energy surfaces for the dissociative adsorption of all SiH{sub x} species on the W(1 1 1) surface have been constructed using the CINEB method. The barriers for H-atom migration from SiH{sub x(a)} to its neighboring W atoms, preferentially on B-sites, were predicted to be 0.4, 1.0, 4.5 and, 8.0 kcal/mol, respectively, for x = 4, 3, 2, and 1, respectively. The adsorption energy of the H atom on a bridge site on the clean W(1 1 1) surface was predicted to be 65.9 kcal/mol, which was found to be slightly affected by the co-adsorption of SiH{sub x−1} within ± 1 kcal/mol.

Photoinduced Optical Properties Of Tl1−xIn1−xSixSe2 Single Crystals

Directory of Open Access Journals (Sweden)

Myronchuk G.L.

2015-06-01

Full Text Available The influence of temperature on electroconductivity and photoinduced changes of the absorption at 0.15 eV under influence of the second harmonic generation of CO2 laser for the two type of single crystals were investigated. The single crystals Tl1−xIn1−xSixSe2 (x=0.1 and 0.2 have been grown by the two-zone Bridgaman-Stockbarger method. The temperature studies of electroconductivity were done in cryostat with thermoregulation in the temperature 77 - 300 K, with stabilization ±0.1 K. Photoinduced treatment of the investigated single crystals were performed using the 180 ns pulses second harmonic generation of the CO2 laser operating at 5.3 μm. Experimental studies have shown that for the Tl1−xIn1−xSixSe2 single crystals with decreasing temperature from 300 up to 240 K and from 315 up to 270 K the conductivity is realized by thermally excited impurities with activation energies equal to about 0.24 eV and 0.22 eV for x= 0.1 and 0.2, respectively. Photoinduced absorption achieves its maximum at a power density below 100 mJ/cm2. Has been shown that the samples with x=0.2 demonstrated higher changes of the photoinduced absorption with respect to the x=0.1. With further decreasing temperature is observed monotonic decrease in the activation energy of conductivity. The origin of these effects is caused by the excitations of both the electronic as well as phonon subsystem. At some power densities the anharmonic excitations become dominant and as a consequence the photoinduced absorption dependence is saturated what were observed. Additionally, we were evaluated at given temperature the average jump length of R for localized states near Fermi level.

High magnetic ordering temperature in the perovskites Sr{sub 4-x}La{sub x}Fe{sub 3}ReO{sub 12} (x=0.0, 1.0, 2.0)

Energy Technology Data Exchange (ETDEWEB)

Retuerto, M.; Li, M.-R.; Go, Y.B. [Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States); Ignatov, A.; Croft, M. [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Ramanujachary, K.V. [Department of Chemistry and Physics, Rowan University, 210 Mullica Hill Road, Glassboro, NJ 08028 (United States); Herber, R.H.; Nowik, I. [Racah Institute of Physics, Hebrew University, Jerusalem, 91904 Israel (Israel); Hodges, J.P. [Spallation Neutron Source, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Dachraoui, W.; Hadermann, J. [EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Greenblatt, M., E-mail: martha@rutchem.rutgers.edu [Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States)

2012-10-15

A series of perovskites Sr{sub 4-x}La{sub x}Fe{sub 3}ReO{sub 12} (x=0.0, 1.0, 2.0) has been prepared by wet chemistry methods. The structure analyses by powder X-ray and neutron diffraction and electron microscopy show that these compounds adopt simple perovskite structures without cation ordering over the B sites: tetragonal (I4/mcm) for x=0.0 and 1.0 and orthorhombic (Pbmn) for x=2.0. The oxidation states of the cations in the compound with x=0.0 appear to be Fe{sup 3+/4+} and Re{sup 7+} and decrease for both with La substitution as evidenced by X-ray absorption spectroscopy. All the compounds are antiferromagnetically ordered above room temperature, as demonstrated by Moessbauer spectroscopy and the magnetic structures, which were determined by powder neutron diffraction. The substitution of Sr by La strongly affects the magnetic properties with an increase of T{sub N} up to {approx}750 K. - Graphical abstract: High resolution transmission electron microscopy image of Sr{sub 4-x}La{sub x}Fe{sub 3}ReO{sub 12} (x=2.0), showing twin domains. Fourier transforms are given of the areas indicated by the circles. Highlights: Black-Right-Pointing-Pointer Sr{sub 4-x}La{sub x}Fe{sub 3}ReO{sub 12} (x=0.0, 1.0, 2.0) perovskites prepared by wet chemistry. Black-Right-Pointing-Pointer PXD, PND, ED, indicate no cation ordering, I4/mcm) for x=0.0, 1.0, Pbmn for x=2. Black-Right-Pointing-Pointer XAS show oxidation states Fe{sup 3+/4+} and Re{sup 7+}; both decrease with increasing x. Black-Right-Pointing-Pointer All order antiferromagnetically above RT, with highest T{sub N} {approx}750 K.

Peculiarity of electron optical orientation in Hg1-xMnxTe and Hg1-xCdxTe alloys

International Nuclear Information System (INIS)

Georgitseh, E.I.; Ivanov-Omskij, V.I.; Pogorletskij, V.M.

1991-01-01

To clarify the effect of exchange interaction of electrons with manganese ions on electron spin relaxation, a study was made on optical orientation in Hg 1-x Mn x Te alloy and Hg 1-x Cd x Te alloys with similar parameters of energy spectrum at 4.2 K. It is shown that exchange interaction in semimagnetic Hg 1-x Mn x Te solutions, caused by the presence of manganese ions, reduced the time of spin relaxation. However, this reduction is not sufficient make optical orientation of electrons not observable

On the Composition and Neutrix Composition of the Delta Function and the Function cosh^{-1}(|x|^{1/r}+1

Directory of Open Access Journals (Sweden)

Brian Fisher

2017-03-01

Full Text Available Let $F$ be a distribution in $\\mathcal{D'}$ and let $f$ be a locally summable function. The composition $F(f(x$ of $F$ and $f$ is said to exist and be equal to the distribution $h(x$ if the limit of the sequence $\\{ F_{n}(f(x\\}$ is equal to $h(x$, where $F_n(x =F(x*\\delta _n(x$ for $n=1,2, \\ldots$ and $\\{\\delta_n(x\\}$ is a certain regular sequence converging to the Dirac delta function. It is proved that the neutrix composition $ \\delta^{(s}[\\cosh^{-1} (x_+^{1/r}+1] $ exists and \\beqa \\delta^{(s}[\\cosh^{-1} (x_+^{1/r}+1] = - \\sum _{k=0} ^{M-1} \\sum_{i=0}^{kr+r} {k \\choose i}{(-1^{i+k}rc_{r,s,k} \\over (kr+rk!}\\delta ^{(k}(x, for $s =M-1,M, M+1,\\ldots$ and $r=1,2,\\ldots,$ where $$c_{r,s,k}=\\sum _{j=0}^{i} {i \\choose j}{ (-1^{kr+r-i}(2j-i^{s+1}\\over 2^{s+i+1} },$$ $M$ is the smallest integer for which $s-2r+1 < 2Mr$ and $r\\le s/(2M+2.$ Further results are also proved.

LUCIA - a new 1-7 keV μ-XAS Beamline

International Nuclear Information System (INIS)

Janousch, M.; Schmidt, Th.; Wetter, R.; Grolimund, G.; Scheidegger, A.M.; Flank, A.-M.; Lagarde, P.; Cauchon, G.; Bac, S.; Dubuisson, J.M.

2004-01-01

LURE-SOLEIL (France) and the Swiss Light Source (SLS) are building together a new micro focused beamline for micro x-ray absorption spectroscopy and micro imaging. This line is designed to deliver a photon flux of the order of 1012 ph/sec on a 1 x 1 μm spot within the energy domain of 0.8 to 7 keV. This beam line is being installed on the X07M straight section of SLS. The source is an APPLE II undulator with a period of 54 mm. The main advantage of this device lies in the delivery of any degree of polarization, linear or circular, over the whole energy range, without the need of a sample-position change. The monochromator will be a fixed exit double crystal equipped with 5 sets of crystals, thanks to the very narrow photon beam from the undulator ( Beryl, KTP, YB66, InSb(111), Si(111) ). The optics includes a first horizontal focusing mirror (spherical), which produces an intermediate source for the horizontal mirror of a Kirkpatrick-Baez (KB) system. The vertical mirror of the KB directly images the source. Finally, a low-pass double mirror filter insures a proper harmonic rejection

Structural and electrical properties of (1-x)(Na1/2Bi1/2)TiO3-xPb(Mg1/3Nb2/3)O3 solid solution

International Nuclear Information System (INIS)

Lee, J.-K.; Yi, J.Y.; Hong, K.S.

2004-01-01

Structural, dielectric and piezoelectric properties of (1-x)(Na 1/2 Bi 1/2 )TiO 3 -xPb(Mg 1/3 Nb 2/3 )O 3 (NBT-xPMN) solid solution have been investigated. An addition of PMN into NBT transformed the structure of sintered samples from rhombohedral to pseudocubic phase where x is larger than 0.1. In calcined powders, however, the intermediate structure were observed between rhombohedral and cubic phases near x=0.1. The formation of solid solution between NBT and PMN modified the dielectric and piezoelectric properties of NBT to be suitable for high temperature dielectric and piezoelectric material. With increasing the content of PMN, the temperature-stability of ε r (T) increased and the high temperature dielectric loss decreased. In addition, the piezoelectric property of NBT-xPMN was enhanced, for the decrease of coercive field and conductivity promoted the domain reversal under the high electric field of the poling process

Mid-infrared two-photon absorption in an extended-wavelength InGaAs photodetector

Science.gov (United States)

Piccardo, Marco; Rubin, Noah A.; Meadowcroft, Lauren; Chevalier, Paul; Yuan, Henry; Kimchi, Joseph; Capasso, Federico

2018-01-01

We investigate the nonlinear optical response of a commercial extended-wavelength In0.81Ga0.19As uncooled photodetector. Degenerate two-photon absorption in the mid-infrared range is observed using a quantum cascade laser emitting at λ = 4.5 μm as the excitation source. From the measured two-photon photocurrent signal, we extract a two-photon absorption coefficient β(2) = 0.6 ± 0.2 cm/MW, in agreement with the theoretical value obtained from the Eg-3 scaling law. Considering the wide spectral range covered by extended-wavelength InxGa1-xAs alloys, this result holds promise for applications based on two-photon absorption for this family of materials at wavelengths between 1.8 and 5.6 μm.

Lattice parameters of the Hg1-xFexSe and Cd1-xFexTe semimagnetic semiconductors

International Nuclear Information System (INIS)

Sarem, A.; Soulayman, S.

2004-01-01

Full text.Hg 1-x Fe x Se and Cd 1-x Fe x Te are members of a family of semiconducting alloys referred to as diluted magnetic semiconductors (DMS), i.e., ternary alloys whose lattice is made up in part of substitutional magnetic ions (in the present case, fe 2+ ). These materials are of considerable interest because, apart from the opportunities provided by the ternary nature of these compounds (e.g., tunability of the energy gap or the lattice constant), they display interesting magnetic properties as well as exchange interaction between the localized Fe 2+ moments and band electrons, resulting in a host of novel effects. In this paper we investigate the behavior of the crystal lattice of Hg 1-x Fe x Se and Cd 1-x Fe x Te, grown using modified Bridgman method. The purpose of the study is providing precise quantitative data for the lattice parameter as a function of x, which can then be used as a means of determining composition. The results of lattice parameter measurements on the ternary semiconductor alloys Hg 1-x Fe x Se over the range (0≤x≤0.15) and Cd 1-x Fe x Te in the range (0≤x≤0.03) are reports. Each sample was subjected to chemical analysis for determining the real concentration of iron. Here it was found that the differences between the nominal compositions and the real ones for all investigated samples are negligible. The powdered samples of Hg 1-x Fe x Se and Cd 1-x Fe x Te with different nominal compositions were studied using a DRON diffractometer with filtered Cο radiation (λ kα1 =1.78892A; λ kα2 =1.79278A). The diffraction patterns with a scan rate of 1 degree 2θ/min were taken. Precise measurements of the line position diffracted and extrapolation method to determine a to value θ=90 degree were made by Least Square Method. This method allowed determining cell parameters foe each sample with accuracy ±0.0001A. The crystal structure of these compounds was determined as a cubic one of the zinc blede type. The structural homogeneity of

Ab initio study of the magnetic ordering in the semiconductors Mn{sub x}Ti{sub 1-x}O{sub 2}, Co{sub x}Ti{sub 1-x}O{sub 2} and Fe{sub x}Ti{sub 1-x}O{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Errico, L.A. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900, La Plata (Argentina)]. E-mail: errico@fisica.unlp.edu.ar; Weissmann, M. [Departamento de Fisica, Comision Nacional de Energia Atomica, Avda. del Libertador 8250, 1429 Buenos Aires (Argentina); Renteria, M. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900, La Plata (Argentina)

2004-12-31

In this work we present a set of density-functional-theory calculations in the systems Mn{sub x}Ti{sub 1-x}O{sub 2}, Fe{sub x}Ti{sub 1-x}O{sub 2}, and Co{sub x}Ti{sub 1-x}O{sub 2}. The calculations were performed with the full-potential linearized augmented plane wave method, assuming that the magnetic impurities substitutionally replace the Ti ions and considering different distributions of them in the host lattice. Our results show that the system Co{sub x}Ti{sub 1-x}O{sub 2} is ferromagnetic, while Mn{sub x}Ti{sub 1-x}O{sub 2} is antiferromagnetic. In both cases, this is independent of the distribution of the impurities in the TiO{sub 2} lattice. First results obtained in the system Fe{sub x}Ti{sub 1-x}O{sub 2} are also presented.

Analytical representation of the thermal conductivity and electrical resistivity of UC/sub 1 +- x/, PuC/sub 1-x/, and (U/sub y/Pu/sub 1-y/)C/sub 1 +- x/

International Nuclear Information System (INIS)

Storms, E.K.

1982-12-01

This report uses selected measurements from the literature to construct analytical expressions that describe the electrical and thermal conductivity of pure, high-density UC/sub 1 +- x/, PuC/sub 1-x/, and (U/sub y/Pu/sub 1-y/C/sub 1 +- x/ as a function of x,y, and temperature. The approach shows that many of the differences between the reported measurements can be resolved if the carbon cntent of the single-phase material is taken into account. Analytical expressions are also given that describe the temperature variation of the phase boundaries for these phases. 16 figures

Magnetic-entropy change in Mn1.1Fe0.9P0.7As0.3-xGe x

International Nuclear Information System (INIS)

Tegus, O.; Fuquan, B.; Dagula, W.; Zhang, L.; Brueck, E.; Si, P.Z.; Boer, F.R. de; Buschow, K.H.J.

2005-01-01

We have studied the magnetic properties and magnetic-entropy changes of Mn 1.1 Fe 0.9 P 0.7 As 0.3-x Ge x compounds with x = 0, 0.05, 0.1, 0.15 and 0.3. X-ray diffraction (XRD) study shows all the compounds crystallize in the Fe 2 P-type structure. Magnetic measurements show that the Curie temperature increases from 150 K for Mn 1.1 Fe 0.9 P 0.7 As 0.3 to 380 K for Mn 1.1 Fe 0.9 P 0.7 Ge 0.3 . A field-induced first-order magnetic phase transition is observed above the Curie temperature for the compounds with x up to 0.15. There exists an optimal composition in which the first-order phase transition is the sharpest. The optimal composition for this system is x = 0.1. The maximal magnetic-entropy change derived from the magnetization data is about 40 J/(kg K) for a field change from 0 to 3 T

The structure and band gap design of high Si doping level Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} (x=1/2)

Energy Technology Data Exchange (ETDEWEB)

Zhang, Shiyan [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Mei, Dajiang, E-mail: meidajiang718@pku.edu.cn [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, Xin [Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Lin, Zheshuai [Center for Crystal Research and Development, Key Laboratory of Functional Crystals and Laser Technology, Chinese Academy of Sciences, Beijing 100190 (China); Zhong, Junbo [Key Laboratory of Green Catalysis of Higher Education Institutes of Sichuan, College of Chemistry and Pharmaceutical Engineering, Sichuan University of Science and Engineering, Zigong 643000 (China); Wu, Yuandong, E-mail: wuyuandong2013@outlook.com [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, Jingli [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China)

2016-06-15

Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe{sub 4} has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe{sub 4} is composed of AgSe{sub 3} trigonal planar units, AgSe{sub 4} tetrahedra and MSe{sub 4}(M=Si, Ga) tetrahedra. AgGaSiSe{sub 4} is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe{sub 4} and the value is 0.33 eV larger than that of Ag{sub 3}Ga{sub 3}SiSe{sub 8} (2.30 eV). - Graphical abstract: The Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe{sub 4} was synthesized for the first time. AgGaSiSe{sub 4} crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe{sub 3} trigonal planar units, AgSe{sub 4} tetrahedra and MSe{sub 4} (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag{sub 1−x}Ga{sub 1−x}Si{sub x}Se{sub 2} with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe{sub 4}. • AgGaSiSe{sub 4} crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe{sub 4} is enlarged compared with Ag{sub 3}Ga{sub 3}SiSe{sub 8}.

Recent observations of Hercules X-1 with HEAO-1 and OSO-8

Science.gov (United States)

Pravdo, S. H.; Becker, R. H.; Bussard, R. W.; Boldt, E. A.; Holt, S. S.; Serlemitsos, P. J.; Swank, J. H.; Rothschild, R. E.

1979-01-01

HEAO 1 X-ray observations of Her X-1 near an onset of the high state are discussed. An X-ray light curve is determined which indicates that for about 0.5 day before the X-ray intensity turn-on there was 1.2-sec pulsed emission from the source at a level intermediate between the high- and low-state intensities. These results are taken as demonstrating the stability in the 35-day cycle when compared with previous observations. An inconclusive search for 58-keV line emission from Her X-1 is also reported.

Quantification of segregation and mass transport in InxGa1-xASGaAs Stranski-Krastanow layers

International Nuclear Information System (INIS)

Rosenauer, A.; Gerthsen, D.; Van Dyck, D.; Arzberger, M.; Boehm, G.; Abstreiter, G.

2001-01-01

We report on transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy measurement of mass transport and segregation in InAs Stranski-Krastanow layers grown on GaAs(001) by molecular beam epitaxy at growth temperatures of 480 and 530 deg. C. Plan-view TEM reveals regularly shaped islands with a density of 7.8x10 10 cm -2 (480 deg. C) and 1.5x10 10 cm -2 (530 deg. C), respectively. Uncapped islands were investigated by strain state analysis of electron wave functions reconstructed from high-resolution TEM images. In-concentration profiles of the islands were obtained by the measurement of lattice-parameter profiles of the islands and the application of finite-element calculations. We find that the islands contain Ga-atoms with a percentage of 50% (480 deg. C) and 67% (530 deg. C). The capped InAs-layers were investigated with PL and TEM. In agreement with TEM, PL indicates a smaller and deeper potential well of the islands grown at 480 deg. C. Concentration profiles of the wetting layers were measured with TEM using the composition evaluation of lattice fringe images method, clearly revealing segregation profiles. The obtained segregation efficiency of In-atoms is 0.77±0.02 (480 deg. C) and 0.82±0.02 (530 deg. C). As an explanation for the strong mass transport of Ga from the substrate to the islands we show that the segregation of In atoms during the growth of the binary InAs can lead to the generation of vacancies in the metal sublattice. The vacancies are filled by Ga-atoms migrating along the surface or by a diffusion of the vacancies from the wetting layer and the islands into the GaAs buffer, leading to a unidirectional diffusion of Ga atoms from the buffer into the Stranski-Krastanow layer

Lax-Phillips scattering theory with two Hilbert spaces V(x)=0((1)/|x|β), β>1

International Nuclear Information System (INIS)

Brambila Paz, F.

1988-10-01

A scattering theory for the wave equation with a perturbation with compact support was developed by Lax and Phillips in 1967. Using Enss approach Phillips developed a Lax-Phillips scattering theory for perturbations V such that V(x)=0((1)/|x| β ), β>2. In this paper we develop a scattering theory for more general perturbations V, i.e. for V(x)=0((1)/|x| β ), β>1. (author). 8 refs

Magnetocaloric effects in Mn1.35Fe0.65P1−xSix compounds

International Nuclear Information System (INIS)

Geng Yao-Xiang; Tegus O; Bi Li-Ge

2012-01-01

The structural and magnetocaloric properties of Mn 1.35 Fe 0.65 P 1−x Si x compounds are investigated. The Si-substituted compounds, Mn 1.35 Fe 0.65 P 1−x Si x with x = 0.52, 0.54, 0.55, 0.56, and 0.57, are prepared by high-energy ball milling and the solid-state reaction. The X-ray diffraction shows that the compounds crystallize into the Fe 2 P-type hexagonal structure with space group P6-bar2m. The magnetic measurements show that the Curie temperature of the compound increases from 253 K for x = 0.52 to 296 K for x = 0.56. The isothermal magnetic-entropy change of the Mn 1.35 Fe 0.65 P 1−x Si x compound decreases with the Si content increasing. The maximal value of the magnetic-entropy change is about 7.0 J/kg·K in the Mn 1.35 Fe 0.65 P 0.48 Si 0.52 compound with a field change of 1.5 T. The compound quenched in water possesses a larger magnetic entropy change and a smaller thermal hysteresis than the non-quenched samples. The thermal hysteresis of the compound is less than 3.5 K. The maximum adiabatic temperature change is about 1.4 K in the Mn 1.35 Fe 0.65 P 0.45 Si 0.55 compound with a field change of 1.48 T. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Magnetic phase transition in 2 nm NixCu1-x (0 ≤ x ≤ 1) clusters

KAUST Repository

Mokkath, Junais Habeeb; Schwingenschlö gl, Udo

2014-01-01

NixCu1-x (0 ≤ x ≤ 1) clusters with a diameter of 2 nm (459 atoms) are modeled by a combination of basin hopping global sampling and reoptimization within spin-polarized density functional theory. The favorable structures for different Ni/Cu ratios

1 Ft. x 1 Ft. Supersonic Wind Tunnel, Bldg. 37

Data.gov (United States)

Federal Laboratory Consortium — The 1- by 1-Foot Supersonic Wind Tunnel (1x), located in the Engine Research Building, is one of the most active test facilities at the Glenn Research Center. Used...

Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS

Directory of Open Access Journals (Sweden)

Sandra Andrea Mayén-Hernández

2014-01-01

Full Text Available The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of ZnxCd1-xS annealed under vacuum at 300°C exhibited the highest photocatalytic activity.

Growth and characterization of NixCu1-x alloy films, NixCu1-x/NiyCu1-y multilayers, and nanowires

International Nuclear Information System (INIS)

Kazeminezhad, I.

2001-12-01

It was found that it is possible to grow Ni x Cu 1-x alloy systems of arbitrary composition by electrodepositing well-defined sub-monolayer quantities of Ni and Cu in alternation using a new method based on that used previously to prepare potentiostatically deposited magnetic multilayers from a single sulphamate-based electrolyte. Following growth, the chemical composition of Ni x Cu 1-x alloy films was obtained by ZAF-corrected energy dispersive X-Ray (EDX) analysis and less than a 4% difference between the nominal and actual composition was observed. The structure of the films was investigated by high-angle X-ray diffractometry (HAXRD) and transmission electron microscopy (TEM). The films grown on polycrystalline Cu substrates had (100) texture, while those grown on Au-coated glass had (111) texture. Some evidence of Ni clustering was obtained by vibrating sample magnetometry (VSM). Self-organisation of the deposited metal was suggested for Ni potentials more positive than ∼-1.4V. The transition from a Ni/Cu multilayer to a Ni x Cu 1-x alloy was also studied and an interesting aspect, namely a plateau region in a plot of magnetisation as a function of Ni layer thickness was observed, suggesting a preferred Ni cluster size in these alloy films. Anisotropic magnetoresistance (AMR) of the films decreased with increasing Cu content at 300K and 77K. SQUID measurements for Ni 0.52 Cu 0.48 and Ni 0.62 CU 0.38 films showed that they become much more strongly ferromagnetic at low temperatures. Evidence for blocked -superparamagnetic behaviour above a blocking temperature (T B ) of the films was obtained from zero-field-cooled (ZFC) and field-cooled (FC) magnetic susceptibility measurements. Ni x Cu 1-x /Ni y Cu 1-y alloy/alloy multilayer films with short repeat distance were successfully fabricated using this method. Up to third order satellite peaks observed in HAXRD showed that the interface is sharp. Room temperature longitudinal magnetoresistance measurements showed

Gas phase UV and IR absorption spectra of CxF2x+1CHO (x=1-4)

DEFF Research Database (Denmark)

Hashikawa, Y; Kawasaki, M; Waterland, RL

2004-01-01

The UV and IR spectra of CxF2x+1 CHO (x = 1-4) were investigated using computational and experimental techniques. CxF2x+1CHO (x = 1-4) have broad UV absorption features centered at 300-310 nm. The maximum absorption cross-section increases significantly and shifts slightly to the red with increased...

SISTEMA DE CROMOSSOMOS SEXUAIS MÚLTIPLOS X1X1X2X2/X1X2Y NA MOSCA-DAS-FRUTAS Anastrepha sororcula (DIPTERA: TEPHRITIDAE

Directory of Open Access Journals (Sweden)

Inês Regina de Araújo Moura Cunha

2014-08-01

Full Text Available Sistemas de cromossomos sexuais simples estão difundidos entre os Tephritidae do gênero Anastrepha. Espécies deste gênero apresentam enorme importância pelo impacto que causam em frutíferas cultivadas, sobretudo no nordeste do Brasil. Análises citogenéticas desenvolvidas em Anastrepha sororcula, através da análise da estrutura cariotípica e bandamento C revelaram a presença de um sistema de cromossomos sexuais múltiplos do tipo X1X1X2X2/X1X2Y nesta espécie. Enquanto as fêmeas apresentam um cariótipo homomórfico com 2n=12, os machos possuem 2n=11, onde se destaca um grande cromossomo Y despareado. O nível de divergência cariotípica da espécie A. sororcula do nordeste, com a presença de um sistema de cromossomos sexuais múltiplos, em relação às regiões central e sudeste do Brasil, podem indicar a ocorrência de impedimentos reprodutivos entre os exemplares das duas áreas e que possivelmente, como outros exemplos que existem neste gênero, A. sororcula constitua um complexo de espécies ainda não inteiramente definido. Palavras-chave: Alossomos, peste agrícola, citogenética de insetos, heterocromatina. DOI: http://dx.doi.org/10.18561/2179-5746/biotaamazonia.v4n2p1-4

Sp1/3 and NF-1 mediate basal transcription of the human P2X1 gene in megakaryoblastic MEG-01 cells

Directory of Open Access Journals (Sweden)

Ennion Steven J

2006-03-01

Full Text Available Abstract Background P2X1 receptors play an important role in platelet function as they can induce shape change, granule centralization and are also involved in thrombus formation. As platelets have no nuclei, the level of P2X1 expression depends on transcriptional regulation in megakaryocytes, the platelet precursor cell. Since nothing is known about the molecular mechanisms regulating megakaryocytic P2X1 expression, this study aimed to identify and functionally characterize the P2X1 core promoter utilized in the human megakaryoblastic cell line MEG-01. Results In order to identify cis-acting elements involved in the transcriptional regulation of P2X1 expression, the ability of 4.7 kb P2X1 upstream sequence to drive luciferase reporter gene expression was tested. Low promoter activity was detected in proliferating MEG-01 cells. This activity increased 20-fold after phorbol-12-myristate-13-acetate (PMA induced differentiation. A transcription start site was detected 365 bp upstream of the start codon by primer extension. Deletion analysis of reporter constructs indicated a core promoter located within the region -68 to +149 bp that contained two Sp1 sites (named Sp1a and Sp1b and an NF-1 site. Individual mutations of Sp1b or NF-1 binding sites severely reduced promoter activity whereas triple mutation of Sp1a, Sp1b and NF-1 sites completely abolished promoter activity in both untreated and PMA treated cells. Sp1/3 and NF-1 proteins were shown to bind their respective sites by EMSA and interaction of Sp1/3, NF-1 and TFIIB with the endogenous P2X1 core promoter in MEG-01 cells was demonstrated by chromatin immunoprecipitation. Alignment of P2X1 genes from human, chimp, rat, mouse and dog revealed consensus Sp1a, Sp1b and NF-1 binding sites in equivalent positions thereby demonstrating evolutionary conservation of these functionally important sites. Conclusion This study has identified and characterized the P2X1 promoter utilized in MEG-01 cells and

Tunable magnetostructural coupling and large magnetocaloric effect in Mn{sub 1−x}Ni{sub 1−x}Fe{sub 2x}Si{sub 1−x}Ga{sub x}

Energy Technology Data Exchange (ETDEWEB)

Zhang, C.L., E-mail: zhangcl@jiangnan.edu.cn [School of Science, Jiangnan University, WuXi 214122 (China); Nie, Y.G.; Shi, H.F.; Ye, E.J.; Zhao, J.Q. [School of Science, Jiangnan University, WuXi 214122 (China); Han, Z.D. [Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500 (China); Xuan, H.C. [College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Wang, D.H. [National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093 (China)

2017-06-15

Highlights: • Realizing FM/PM-type magnetostructural transition by co-substitution at both three atomic sites of MnNiSi. • Magnetostructural transition temperature is tunable in a broad temperature window of 285 K spanning room temperature. • Relatively high M{sub S} for the orthorhombic phase and large ΔM across the magnetostructural transition. • Relatively large magnetic entropy changes and broad working temperature span. - Abstract: A common method of realizing a magnetostructural coupling for MnNiSi is chemically alloying it with a ternary compound possessing a stable Ni{sub 2}In-type structure. In this way, the substituting elements and levels are determined by the stoichiometry of counterpart compounds. In this work, chemical co-substitutions of Fe and Ga at three different atomic sites of MnNiSi were performed. The selections of substitution elements and levels were based on the site occupation rule and an analysis of the site-dependent substitutional effects on structural stability, Curie temperatures, and magnetic moment of MnNiSi. A broad Curie temperatures window of 285 K spanning room temperature was established in Mn{sub 1−x}Ni{sub 1−x}Fe{sub 2x}Si{sub 1−x}Ga{sub x}. Strong magnetostructural transformations with large magnetization difference were realized in this window. A relatively large magnetic entropy change of −38.1 J/kg K was observed for a field change of 5 T near room temperature in the alloy with x = 0.15.

Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

Energy Technology Data Exchange (ETDEWEB)

Zhang, Limin, E-mail: zhanglm@lzu.edu.cn; Peng, Jinxin; Ai, Wensi; Zhang, Jiandong; Wang, Tieshan [School of Nuclear Science and Technology, Lanzhou University, Lanzhou, Gansu 730000 (China); Jiang, Weilin; Dissanayake, Amila; Zhu, Zihua; Shutthanandan, Vaithiyalingam [Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-06-28

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.

Temperature dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La1-xSrxMnO3

International Nuclear Information System (INIS)

Arenholz, Elke; Mannella, N.; Booth, C.H.; Rosenhahn, A.; Sell, B.C.; Nambu, A.; Marchesini, S.; Mun, B. S.; Yang, S.-H.; Watanabe, M.; Ibrahim, K.; Arenholz, E.; Young, A.; Guo, J.; Tomioka, Y.; Fadley, C.S.

2007-01-01

We have studied the temperature-dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La 1-x Sr x MnO 3 (x= 0.3-0.4) with core and valence level photoemission (PE), x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES), resonant inelastic x-ray scattering (RIXS), extended x-ray absorption fine structure (EXAFS) spectroscopy and magnetometry. As the temperature is varied across the Curie temperature T c , our PE experiments reveal a dramatic change of the electronic structure involving an increase in the Mn spin moment from ∼ 3 (micro)B to ∼ 4 (micro)B, and a modification of the local chemical environment of the other constituent atoms indicative of electron localization on the Mn atom. These effects are reversible and exhibit a slow-timescale ∼200 K-wide hysteresis centered at T c . Based upon the probing depths accessed in our PE measurements, these effects seem to survive for at least 35-50 (angstrom) inward from the surface, while other consistent signatures for this modification of the electronic structure are revealed by more bulk sensitive spectroscopies like XAS and XES/RIXS. We interpret these effects as spectroscopic fingerprints for polaron formation, consistent with the presence of local Jahn-Teller distortions of the MnO 6 octahedra around the Mn atom, as revealed by the EXAFS data. Magnetic susceptibility measurements in addition show typical signatures of ferro-magnetic clusters formation well above the Curie temperature

Crystal structure of Na4Co7−xAl0.67x(As1−yPyO46 (x = 1.60; y = 0.116

Directory of Open Access Journals (Sweden)

Chokri Issaoui

2016-04-01

Full Text Available The title compound, tetrasodium hepta(cobalt/aluminium hexa(arsenate/phosphate, Na4Co5.40Al1.07(As0.883P0.116O46, was prepared by a solid-state reaction. It is a new member of the family of isostructural compounds with the general formula A4M7(XO46 (A: Na, K; M: Ni, Co; X: P, As that is most similar to Na4Co5.63Al0.91(AsO46. The Co2+ ions in the title compound are substituted by Al3+ in a fully occupied octahedral site (site symmetry 2/m and a partially occupied tetrahedral site (site symmetry 2. A third octahedral site is fully occupied by Co2+ ions only. With regard to the P and As atoms, one site (site symmetry m is simultaneously occupied by As and P, whereas in the second site there is only arsenic. The alkali cations are, as in the isostructural compounds, distributed over half-occupied crystallographic sites, with a positional disorder of one of them. The proposed structural model is based both on a careful investigation of the crystal data, as well as validation by means of bond-valence-sum (BVS and charge-distribution (CHARDI calculations. The correlation between the X-ray refinement and the validation results is discussed.

Neutron scattering studies of the defect structures in TiCsub(1-x) and NbCsub(1-x)

International Nuclear Information System (INIS)

Moisy-Maurice, V.; Novion, C.H. de; Lorenzelli, N.

1981-08-01

Single crystals of TiCsub(1-x) and NbCsub(1-x) were studied by elastic neutron diffuse scattering at room temperature in the (110) reciprocal lattice plane; the spectra of TiCsub(0.76), TiCsub(0.79) and NbCsub(0.73) were analysed by the Sparks and Borie method, which allowed to determine the first Cowley-Warren short-range order coefficients and a shortening (0.03 A) of the average first neighbour metal-carbon distances. The order-disorder transformation in TiCsub(1-x) (0.52 0 C) and critical coefficients β were determined. The results are discussed in terms of interatomic pair potentials

The determination of the surface potential for the CdxHg1-xTe crystals and the V-CdxHg1-xTe and Ni-V-CdxMg1-xTe structures

International Nuclear Information System (INIS)

Veliyulin, Eh.I.; Ragimova, R.A.; Mamedov, A.A.

1996-01-01

Surface potential of semiconductor crystals n-Cd x Hg 1-x Te (unannealed and annealed in mercury vapors) and of the structures V-Cd x Hg 1-x Te, Ni-V-Cd x Hg 1-x Te has been defined using spectroscopy of weak-field electric reflection. It is shown that a deep penetration of vanadium atoms in near the surface region of the crystal occurs in the structures on the basis of unannealed Cd x Hg 1-x Te. 1 ref.; 4 figs

High-efficiency AlxGa1-xAs/GaAs cathode for photon-enhanced thermionic emission solar energy converters

Science.gov (United States)

Feng, Cheng; Zhang, Yijun; Qian, Yunsheng; Wang, Ziheng; Liu, Jian; Chang, Benkang; Shi, Feng; Jiao, Gangcheng

2018-04-01

A theoretical emission model for AlxGa1-xAs/GaAs cathode with complex structure based on photon-enhanced thermionic emission is developed by utilizing one-dimensional steady-state continuity equations. The cathode structure comprises a graded-composition AlxGa1-xAs window layer and an exponential-doping GaAs absorber layer. In the deduced model, the physical properties changing with the Al composition are taken into consideration. Simulated current-voltage characteristics are presented and some important factors affecting the conversion efficiency are also illustrated. Compared with the graded-composition and uniform-doping cathode structure, and the uniform-composition and uniform-doping cathode structure, the graded-composition and exponential-doping cathode structure can effectively improve the conversion efficiency, which is ascribed to the twofold built-in electric fields. More strikingly, this graded bandgap structure is especially suitable for photon-enhanced thermionic emission devices since a higher conversion efficiency can be achieved at a lower temperature.

Hall mobilities in GaN{sub x}As{sub 1-x}

Energy Technology Data Exchange (ETDEWEB)

Olea, Javier; Gonzalez-Diaz, German [Dpto. de Fisica Aplicada III, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, Madrid 28040 (Spain); Yu, Kin Man; Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197 (United States)

2010-07-15

In this work we report a systematic study of the electron and hole mobilities of GaN{sub x}As{sub 1-x} alloys with different dopants (Zn, Te) and carrier concentrations (10{sup 17}-10{sup 19} cm{sup -3}). We found a very slight reduction of the hole mobility in p-GaN{sub x}As{sub 1-x} compared to p-GaAs, indicating that for small N contents ({proportional_to}1.6%) the valence band is not affected by the N incorporation. In a striking contrast, incorporation of even small amounts of N leads to an abrupt reduction of the electron mobility in n-GaN{sub x}As{sub 1-x}. We further show that the processes that limit the mobility in GaN{sub x}As{sub 1-x} can be explained by the band broadening and the random field scatterings. Considering these two scattering mechanisms we calculated the dependence of electron mobilities on electron concentration as well as on N composition in GaN{sub x}As{sub 1-x}. The calculations agree reasonably well with experiment data of maximum electron mobilities with alloy composition. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetic phase transition in 2 nm NixCu1-x (0 ≤ x ≤ 1) clusters

KAUST Repository

Mokkath, Junais Habeeb

2014-04-17

NixCu1-x (0 ≤ x ≤ 1) clusters with a diameter of 2 nm (459 atoms) are modeled by a combination of basin hopping global sampling and reoptimization within spin-polarized density functional theory. The favorable structures for different Ni/Cu ratios are obtained by probing the energy landscape of face-centered cubic clusters. A sharp phase transition from nonmagnetic to ferromagnetic behavior is discovered above x = 0.4 and explained in terms of the distribution of the Ni atoms in the clusters. Small Cu magnetic moments are induced by proximity. © 2014 American Chemical Society.

Long-term studies with the Ariel 5 ASM. I - Hercules X-1, Vela X-1, and Centaurus X-3

Science.gov (United States)

Holt, S. S.; Kaluzienski, L. J.; Boldt, E. A.; Serlemitsos, P. A.

1979-01-01

Twelve hundred days of 3-6 keV X-ray data from Her X-1, Vela X-1, and Cen X-3 accumulated with the Ariel 5 All-Sky Monitor are interrogated. The binary periodicities of all three can be clearly observed, as can the 35 day variation of Her X-1, for which we can refine the period to 34.875 plus or minus 0.030 days. No such longer-term periodicity less than 200 days is observed from Vela X-1. The 26.6 days low-state recurrence period for Cen X-3 is not observed, but a 43.0 day candidate periodicity is found which may be consistent with the precession of an accretion disk in that system. The present results are illustrative of the long-term studies which can be performed on approximately 50 sources over a temporal base which will ultimately extend to at least 1800 days.

Magnetic properties and magnetocaloric effects in Mn1.2Fe0.8P1-xGex compounds

International Nuclear Information System (INIS)

Ou, Z Q; Wang, G F; Lin Song; Tegus, O; Brueck, E; Buschow, K H J

2006-01-01

We have studied the magnetic properties and magnetocaloric effects in the Mn 1.2 Fe 0.8 P 1-x Ge x compounds with x = 0.2, 0.22, 0.3, 0.4 and 0.5. X-ray diffraction patterns show that the Mn 1.2 Fe 0.8 P 1-x Ge x compounds crystallize in the hexagonal Fe 2 P-type crystal structure. The magnetic moments of the Mn 1.2 Fe 0.8 P 1-x Ge x compounds measured at 5 K and 5 T increase with increasing Ge content. The Curie temperature increases strongly and the magnetic entropy change has a maximum around 233 K for the compound with x = 0.22, which is about 19 and 31 J kg -1 K -1 for a field change of 2 and 5 T, respectively

Czochralski growth and optical properties of Li 6Gd 1-xEu x(BO 3) 3 ( x=0-1) single crystals

Science.gov (United States)

Yavetskiy, R. P.; Dolzhenkova, E. F.; Dubovik, M. F.; Korshikova, T. I.; Tolmachev, A. V.

2005-04-01

It was shown that a continuous series of Li 6Gd 1-xEu x(BO 3) 3 solid solutions exist within the whole concentration range ( x=0-1). Li 6Gd 1-xEu x(BO 3) 3 ( x=0-0.03; 1) single crystals up to 25 mm in length and up to 20 mm in diameter have been grown by the Czochralski method. The structural perfection of the crystals has been estimated from etch patterns and XPA analysis results. The optical absorption and thermally stimulated luminescence of the grown crystals has been studied.

Low x Double ln2(1/x) Resummation Effects at the Sum Rules for Nucleon Structure Function g1

International Nuclear Information System (INIS)

Ziaja, B.

2001-01-01

We have estimated the contributions to the moments of polarized nucleon structure function g 1 (x,Q 2 ) coming from the region of the very low x (10 -5 2 (1/x) resummation. The Q 2 evolution of g 1 was described by the unified evolution equations incorporating both the leading order Altarelli-Parisi evolution at large and moderate x, and the double ln 2 (1/x) resummation at small x. The moments were obtained by integrating out the extrapolated nucleon structure function in the region 10 -5 < x<1. (author)

Huge operation by energy gap of novel narrow band gap Tl1-x In1-x B x Se2 (B = Si, Ge): DFT, x-ray emission and photoconductivity studies

Science.gov (United States)

Piasecki, M.; Myronchuk, G. L.; Zamurueva, O. V.; Khyzhun, O. Y.; Parasyuk, O. V.; Fedorchuk, A. O.; Albassam, A.; El-Naggar, A. M.; Kityk, I. V.

2016-02-01

It is shown that narrow band gap semiconductors Tl1-x In1-x GexSe2 are able effectively to vary the values of the energy gap. DFT simulations of the principal bands during the cationic substitutions is done. Changes of carrier transport features is explored. Relation with the changes of the near the surface states is explored . Comparison on a common energy scale of the x-ray emission Se Kβ 2 bands, representing energy distribution of the Se 4p states, indicates that these states contribute preliminary to the top of the valence band. The temperature dependence of electrical conductivity and spectral dependence photoconductivity for the Tl1-x In1-x Ge x Se2 and Tl1-x In1-x Si x Se2 single crystals were explored and compared with previously reported Tl1-x In1-x Sn x Se2. Based on our investigations, a model of centre re-charging is proposed. Contrary to other investigated crystals in Tl1-x In1-x Ge x Se2 single crystals for x = 0.1 we observe extraordinarily enormous photoresponse, which exceed more than nine times the dark current. X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces of Tl1-x In1-x GexSe2 (x = 0.1 and 0.2) single crystals have been studied. These results indicate that the relatively low hygroscopicity of the studied single crystals is typical for the Tl1-x In1-x Ge x Se2 crystals, a property that is very important for handling these quaternary selenides as infrared materials operating at ambient conditions.

Impurity states and the diamagnetic susceptibility of a donor in a GaAs/AlxGa1-xAs Triangular Quantum Well under hydrostatic pressure

Science.gov (United States)

Kalpana, Panneer Selvam; Jayakumar, Kalyanasundaram

2017-11-01

We study the effect of Γ-X band crossover due to the application of hydrostatic pressure of a hydrogenic donor confined in a Triangular GaAs/Al1-xGaxAs Quantum Well (TQW) for x = 0.3 and the diamagnetic susceptibility (χdia) for such an impurity in 1s and some few low lying excited states have been investigated. The Schrodinger equation has been solved using variational technique in the effective mass approximation. The results show that the diamagnetic susceptibility (χdia) of a hydrogenic donor abruptly increases at a particular pressure for 1s and 2p± states but a steady increase for 2s state as a function of applied pressure.

Transport properties and spin correlations of La1.85-xSr0.15+xCu1-xFexO4

DEFF Research Database (Denmark)

Xu, G.J.; Pu, Q.R.; Liu, B.

2004-01-01

A series of double-doped La1.85-xSr0.15+xCu1-xFexO4 (0less than or equal toxless than or equal to1) ceramic samples were prepared by the solid-state reaction method. The structure, transport properties, and spin correlations were studied by means of x-ray diffraction, resistivity, thermoelectric...

Effect of heat treatment on the precipitation in Al-1 at.% Mg-x at.% Si (x = 0.6, 1.0 and 1.6) alloys

Energy Technology Data Exchange (ETDEWEB)

Gaber, A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Afify, N. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)], E-mail: afify@aun.edu.eg; Mostafa, M.S.; Abbady, Gh. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

2009-05-27

The fine-scale precipitates, that occurs during aging, the supersaturated Al-1.0 at.% Mg-x at.% Si (x = 0.6, 1.0 and 1.6) alloys have been investigated by differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques. The strength of the alloys increases as a high density of very fine {beta}'' coherent and {beta}' semicoherent precipitates nucleate. The precipitates compositions have been determined by analyzing the X-ray diffraction (XRD) charts, by using Scherrer equation. The obtained results showed that the {beta}'' and {beta}' precipitates size lies in the nanometer range (from {approx}5 nm to {approx}32 nm). In addition, increasing Si concentration has exhibited an increase in the density of the precipitates, which fortifies the physical properties.

Synthesis and characterization of titanium-vanadium ternary nitride (Ti{sub x}V{sub 1}-xN).; Sintesis y caracterizacion del nitruro ternario de titanio y vanadio (Ti{sub x}V{sub 1}-xN)

Energy Technology Data Exchange (ETDEWEB)

Roldan, M. A.; Alcala, M. D.; Ortega, A.; Real, C.

2011-07-01

Titanium-Vanadium nitride (TiVN) has been prepared from carbothermal reduction of corresponding oxides and also by direct nitridation of a mix of two metals employing the ATVC method. The characterization of the final product by X-ray diffraction, scanning electron microscopy, electron energy loss (EELS), and X-ray absorption spectroscopy (XAS) is presented. The synthesis of the ternary nitride has been possible in all range of composition and the final product is obtained with nano metric particle size and a high microhardness after sintering. (Author) 58 refs.

K- and L-edge X-ray Absorption Spectroscopy (XAS) and Resonant Inelastic X-ray Scattering (RIXS) Determination of Differential Orbital Covalency (DOC) of Transition Metal Sites.

Science.gov (United States)

Baker, Michael L; Mara, Michael W; Yan, James J; Hodgson, Keith O; Hedman, Britt; Solomon, Edward I

2017-08-15

Continual advancements in the development of synchrotron radiation sources have resulted in X-ray based spectroscopic techniques capable of probing the electronic and structural properties of numerous systems. This review gives an overview of the application of metal K-edge and L-edge X-ray absorption spectroscopy (XAS), as well as K resonant inelastic X-ray scattering (RIXS), to the study of electronic structure in transition metal sites with emphasis on experimentally quantifying 3d orbital covalency. The specific sensitivities of K-edge XAS, L-edge XAS, and RIXS are discussed emphasizing the complementary nature of the methods. L-edge XAS and RIXS are sensitive to mixing between 3d orbitals and ligand valence orbitals, and to the differential orbital covalency (DOC), that is, the difference in the covalencies for different symmetry sets of the d orbitals. Both L-edge XAS and RIXS are highly sensitive to and enable separation of and donor bonding and back bonding contributions to bonding. Applying ligand field multiplet simulations, including charge transfer via valence bond configuration interactions, DOC can be obtained for direct comparison with density functional theory calculations and to understand chemical trends. The application of RIXS as a probe of frontier molecular orbitals in a heme enzyme demonstrates the potential of this method for the study of metal sites in highly covalent coordination sites in bioinorganic chemistry.

Radiation-induced conduction under high electric field (1 x 106 to 1 x 108 V/m) in polyethylene-terephthalate

International Nuclear Information System (INIS)

Maeda, H.; Kurashige, M.; Ito, D.; Nakakita, T.

1978-01-01

Radiation-induced conduction in polyethylene-terephthalate (PET) has been measured under high electric field (1.0 x 10 6 to 1.6 x 10 8 V/m). In a 6-μm-thick PET film, saturation of the radiation-induced current occurs at field strengths above 1.2 x 10 8 V/m. This has been demonstrated by the thickness and dose rate dependence of the induced current. Radiation-induced conductivity increases monotonically with field strength, then shows a saturation tendency. This may be explained by geminate recombination. Above 1 x 10 8 V/m, slowly increasing radiation-induced current appears. This may be caused by electron injection from the cathode, enhanced by the accumulation of the hetero space charges near it

Hydrogen-induced metallization on Ge(1 1 1) c(2 x 8)

International Nuclear Information System (INIS)

Razado, I.C.; Zhang, H.M.; Hansson, G.V.; Uhrberg, R.I.G.

2006-01-01

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 x 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 x 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states

Tuning of the optical properties of In-rich InxGa1−xN (x=0.82−0.49) alloys by light-ion irradiation at low energy

International Nuclear Information System (INIS)

De Luca, Marta; Polimeni, Antonio; Capizzi, Mario; Pettinari, Giorgio; Ciatto, Gianluca; Fonda, Emiliano; Amidani, Lucia; Boscherini, Federico; Filippone, Francesco; Bonapasta, Aldo Amore; Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver; Giubertoni, Damiano; Bersani, Massimo

2013-01-01

The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In x Ga 1−x N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects

Epitaxial lateral overgrowth of Ga{sub x}In{sub 1-x}P toward direct Ga{sub x}In{sub 1-x}P/Si heterojunction

Energy Technology Data Exchange (ETDEWEB)

Omanakuttan, Giriprasanth; Stergiakis, Stamoulis; Sychugov, Ilya; Lourdudoss, Sebastian; Sun, Yan-Ting [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Sahgal, Abhishek [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Department of Physics, Indian Institute of Technology Delhi, New Delhi (India)

2017-03-15

The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of Ga{sub x}In{sub (1-x)}P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the Ga{sub x}In{sub (1-x)}P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG Ga{sub x}In{sub (1-x)}P layer, and Si incorporation in the vicinity of direct Ga{sub x}In{sub (1-x)}P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synchrotron radiation based analytical techniques (XAS and XRF)

International Nuclear Information System (INIS)

Jha, Shambhu Nath

2014-01-01

A brief description of the principles of X-ray absorption spectroscopy (XAS) and X-ray fluorescence (XRF) techniques is given in this article with emphasis on the advantages of using synchrotron radiation-based instrumentation/beamline. XAS technique is described in more detail to emphasize the strength of the technique as a local structural probe. (author)

Density of liquid Hg(1-x)Cd(x)Te

Science.gov (United States)

Chandra, D.; Holland, L. R.

1983-01-01

Negative thermal expansion has been established in liquid Hg(1-x)Cd(x)Te for x less than 0.2 employing a pycnometric method. Pure HgTe increases in density from its melting point at 670 C to a maximum value at 750 C, where normal thermal expansion progressively resumes. The dependence of density on temperature for liquid Hg(1-x)Cd(x)Te arises almost exclusively from the HgTe portion of the melt, while CdTe acts as a diluent. The temperature corresponding to the maximum density changes slightly with composition, increasing by about 5 C for x = 0.1.

Magnetic phase diagram of Co(Cr1-xA lx) 2O4 (x = 0.0-1.0)

Science.gov (United States)

Padam, R.; Sarkar, T.; Mathieu, R.; Thota, S.; Pal, D.

2017-08-01

We report the role of Al substitution in the magnetic properties of spinel CoCr2O4 by means of temperature dependent dc and ac magnetization and heat capacity measurements. Various compositions (0.0 ≤ x ≤ 1.0) of polycrystalline Co(Cr1-xAlx)2O4 samples have been prepared by sol-gel processing and their crystal structure was investigated by X-ray diffraction which was found to crystallize in the normal cubic spinel structure. For x ≤ 0.1, the system exhibits multiple magnetic orderings (long range ferrimagnetic ordering TC, spin-spiral ordering TS, and lock-in transition TL), similar to that of the parent compound, CoCr2O4. However, all the compositions between x = 0.1 and 0.5 exhibit long range ferrimagnetic ordering below TC and also a short range order at low temperature. Spin-glass like ordering was noticed between x = 0.6 and 0.8 due to the diluted B-site occupancy, whereas the end compound CoAl2O4 (x = 1.0) shows antiferromagnetic behavior. On the basis of these results, we propose a magnetic phase diagram for the Co(Cr1-xAlx)2O4 series as a function of the Al content (x) and measuring temperature (T).

Phase transition in Smsub(1-x)Gdsub(x)S and Smsub(1-x)Tmsub(x)S solid solutions under pressure

International Nuclear Information System (INIS)

Kaminskij, V.V.; Stepanov, N.N.; Romanova, M.V.

1985-01-01

Experiments are conducted on studying the effect of the n quantity on Psub(pt) (phase transition pressure) for SmS and systems of solid solutions Smsub(1-x)Gdsub(x)S and Smsub(1-x)Tmsub(x)S with conductivity electron concentrations approximately 10 19 -10 21 cm -3 corresponding to the semiconducting phase of these solutions. The investigated monocrystal samples have been prepared by the method of planar crystallization from the melt, have been chipped off over the cleavage planes [100], their characteristic sizes not exceeding 2 mm. Samples of the Smsub(1-x)Tmsub(x)S system were polycrystalline and they had characteristic dimensions of approximately 3mm. Concentration of conductivity electrons has been determined from measurements of the Hall constant. Hydrostatic compression of the samples has been exercised in a piston high-pressure chamber at T=300 K. The observed electric conductivity jump determined by the standard d.c. compensation technique was a criterion of the presence of the phase transition to the metal state. Dependences of Psub(pt) in SmS base solid solutions with approximately 10 19 -10 21 cm -3 concentration of conductivity electrons have similar tendency in behaviour: a certain increase in the phase transition pressure with n growth and then its drop at n approaching concentrations corresponding to compositions close to critical ones for the semiconductor-metal phase transition in any system of solid solutions. If the first mechanism prevails at small as then further on the second mechanism swelling by a power law with a high index plays the main role

The growth of Zn on a Si(1 0 0)-2x1 surface

International Nuclear Information System (INIS)

Xie Zhaoxiong; Tanaka, Ken-ichi

2005-01-01

Adsorption of Zn atoms on a Si(1 0 0)-2x1 surface was studied by scanning tunneling microscopy at room temperature. Narrow lines are grown perpendicular to the Si-dimer rows of the [1 1 0] direction at low coverage. The narrow line is formed by arraying rectangular Zn 3 dots, where a dot is composed of one Zn atom on a Si dimer and the other two in the neighboring two hollow sites. When the Si(1 0 0)-2x1 surface is covered with one monolayer of Zn, a 4x1 structure is established. More deposition of Zn on the 4x1 monolayer grows into three-dimensional Zn islands

Effect of γ- Ray Irradiation on the Solid Ionic Conductor of (Cul)x(Na3PO4)1-X Materials (x= 0.1 and x= 0.3)

International Nuclear Information System (INIS)

Purwanto, P.

2008-01-01

Study on the effect of γ- ray irradiation on solid state conductor (Cul) x (Na 3 PO 4 ) 1-X have been done. The solid ionic conductor of (Cul) x (Na 3 PO 4 ) 1-X (x= 0.1 and x= 0.3) had been made by mixing Cul with Na 3 PO 4 by formula of (Cul) x (Na 3 PO 4 ) 1-X where x= 0.1 and x= 0.3 then pressed with 48.26 x 10 6 N/m 2 into pellete in diametre 1.5 x 10 - 2 m. The solid ionic conductor was then γ- ray irradiated with dose of 5 to 30 kGy. The result showed that the structure of (Cul) x (Na 3 PO 4 ) 1-X was Cul and Na 3 PO 4 . Crystall lattice strain of (Cul) x (Na 3 PO 4 ) 1-X were measured stable against the influence of radiation. The conductivity measurement of (Cul) x (Na 3 PO 4 ) 1-X was carried out by LCR at the frequence of 0.1 Hz to 100 kHz. The result showed that the conductivities of (Cul) x (Na 3 PO 4 ) 1-X after irradiation were increasing with radiation dose. (author)

High-field magnetostriction in CeNiSn{sub 1-x}Ge{sub x} (0<=x<=1) strongly correlated systems

Energy Technology Data Exchange (ETDEWEB)

Moral, A. del, E-mail: delmoral@unizar.e [Laboratorio de Magnetismo de Solidos, Departamento de Fisica de Materia Condensada and ICMA, Universidad de Zaragoza and CSIC, 50009 Zaragoza (Spain); Fuente, C. de la [Laboratorio de Magnetismo de Solidos, Departamento de Fisica de Materia Condensada and ICMA, Universidad de Zaragoza and CSIC, 50009 Zaragoza (Spain)

2010-05-15

Magnetization (down to 1.8 K and up to 9 T) and magnetostriction (down to 4.2 K and up to 30 T) measurements have been performed in the series of polycrystalline intermetallics CeNiSn{sub 1-x}Ge{sub x} (0<=x<=1), which show a crossover from Kondo-lattice to fluctuating valence behaviors with x increase. Magnetostriction observed can be denominated as 'colossal' for a paramagnet (up to 0.68% at 150 K and 30 T), with no sign of saturation. Field, H, induced metamagnetic transitions associated to a change in Ce valence are observed. Three kinds of analysis of magnetostriction have been performed to ascertain the magnetostriction origin. At relatively low field and low temperatures these systems follow well the standard theory of magnetostriction (STM), revealing single-ion crystal field and exchange origins, and a determination of the alpha-symmetry microscopic magnetoelastic parameters have been performed. The valence transition is well explained in terms of the interconfigurational model, which needs an extension up to power H{sup 4}. Application of the scaling (thermodynamics corresponding low states) allows the obtainment of the Grueneisen constant, which increases with x. Needed elastic constants measurements are also reported.

DIA1R is an X-linked gene related to Deleted In Autism-1.

Directory of Open Access Journals (Sweden)

Azhari Aziz

Full Text Available BACKGROUND: Autism spectrum disorders (ASDS are frequently occurring disorders diagnosed by deficits in three core functional areas: social skills, communication, and behaviours and/or interests. Mental retardation frequently accompanies the most severe forms of ASDs, while overall ASDs are more commonly diagnosed in males. Most ASDs have a genetic origin and one gene recently implicated in the etiology of autism is the Deleted-In-Autism-1 (DIA1 gene. METHODOLOGY/PRINCIPAL FINDINGS: Using a bioinformatics-based approach, we have identified a human gene closely related to DIA1, we term DIA1R (DIA1-Related. While DIA1 is autosomal (chromosome 3, position 3q24, DIA1R localizes to the X chromosome at position Xp11.3 and is known to escape X-inactivation. The gene products are of similar size, with DIA1 encoding 430, and DIA1R 433, residues. At the amino acid level, DIA1 and DIA1R are 62% similar overall (28% identical, and both encode signal peptides for targeting to the secretory pathway. Both genes are ubiquitously expressed, including in fetal and adult brain tissue. CONCLUSIONS/SIGNIFICANCE: Examination of published literature revealed point mutations in DIA1R are associated with X-linked mental retardation (XLMR and DIA1R deletion is associated with syndromes with ASD-like traits and/or XLMR. Together, these results support a model where the DIA1 and DIA1R gene products regulate molecular traffic through the cellular secretory pathway or affect the function of secreted factors, and functional deficits cause disorders with ASD-like symptoms and/or mental retardation.

InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.

Science.gov (United States)

Fonseka, H A; Ameruddin, A S; Caroff, P; Tedeschi, D; De Luca, M; Mura, F; Guo, Y; Lysevych, M; Wang, F; Tan, H H; Polimeni, A; Jagadish, C

2017-09-21

The usability and tunability of the essential InP-InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP-InGaAs-InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP-InGaAs direct interface is found to be sharp while the InGaAs-InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3-1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP-InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

Analysis of different tunneling mechanisms of InxGa1−xAs/AlGaAs tunnel junction light-emitting transistors

International Nuclear Information System (INIS)

Wu, Cheng-Han; Wu, Chao-Hsin

2014-01-01

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

Hydrogen absorption in Ce{sub x}Gd{sub 1-x} alloys

Energy Technology Data Exchange (ETDEWEB)

Bereznitsky, M. [Department of Nuclear Engineering, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva 84105 (Israel); Bloch, J. [Nuclear Research Center-Negev, P.O. Box 9001, Beer Sheva 84190 (Israel); Yonovich, M. [Department of Nuclear Engineering, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva 84105 (Israel); Schweke, D. [Nuclear Research Center-Negev, P.O. Box 9001, Beer Sheva 84190 (Israel); Mintz, M.H. [Department of Nuclear Engineering, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva 84105 (Israel); Nuclear Research Center-Negev, P.O. Box 9001, Beer Sheva 84190 (Israel); Jacob, I., E-mail: izi@bgu.ac.il [Department of Nuclear Engineering, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva 84105 (Israel)

2012-08-15

Highlights: Black-Right-Pointing-Pointer Ce{sub x}Gd{sub 1-x} alloys exhibit the most negative heats of hydride formation ever found. Black-Right-Pointing-Pointer Thermodynamics of H absorption in Ce{sub x}Gd{sub 1-x} correlates with the alloys hardness. Black-Right-Pointing-Pointer The entropies of H solution and hydride formation reflect the hydrogen vibrations. Black-Right-Pointing-Pointer Terminal hydrogen solubilities change in a monotonic way between Ce and Gd. - Abstract: The effect of alloying on the thermodynamics of hydrogen absorption was studied for Ce{sub x}Gd{sub 1-x} alloys (0 {<=} x {<=} 1) at temperatures between 850 K and 1050 K in the 1-10{sup -4} Torr pressure range. The temperature-dependent hydrogen solubilities and plateau pressures for hydride formation were obtained from hydrogen absorption isotherms. The terminal hydrogen solubility (THS) at a given temperature changes in a monotonic way as a function of x. It is approximately three times higher in Gd, than in Ce, throughout the investigated temperature range. This monotonic behavior is opposed to that of many other substitutional alloys, for which the hydrogen terminal solubility increases with increasing solute concentrations. The enthalpies, {Delta}H{sub f}, and the entropies, {Delta}S{sub f}, of the dihydride formation exhibit a pronounced and broad negative minimum starting at x Almost-Equal-To 0.15, yielding the most negative {Delta}H{sub f} values ever found for metal hydrides. On the other hand, the enthalpies and entropies of ideal solution display a positive trend at x = 0.15 and x = 0.3. Both behaviors are considered in view of a reported distinct variation of the Ce{sub x}Gd{sub 1-x} hardness as a function of x. The particular compositional variations of the entropies of solution and formation as a function of x reflect most likely the vibrational properties of the hydrogen atoms in the metal matrices.

Exciton-related energies of the 1s-like states of excitons in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells

Energy Technology Data Exchange (ETDEWEB)

Miranda, Guillermo L. [Fisica Teorica y Aplicada, Escuela de Ingenieria de Antioquia, A.A. 7516, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)

2012-10-15

The dependencies of the binding energies of the lowest four 1s-like exciton states in GaAs-(Ga,Al)As coupled double quantum wells (CDQW) on the geometric parameters of the system are theoretically studied. A variational approach, together with the parabolic band and effective mass approximations, were considered in order to perform the numerical calculations. It is shown that in the case of a symmetric system there is a degeneracy between the heavy-hole even and odd states and this degeneracy can be removed by the presence of a sufficiently narrow middle barrier. In contrast to this fact, the electron even and odd states are never degenerated. It is detected that, if the system is asymmetric, there will appear binding energies anticrossings between the heavy-hole states at the point of the asymmetric {yields} symmetric QW transition. - Highlights: Black-Right-Pointing-Pointer Study of 1s-like exciton states in double quantum wells. Black-Right-Pointing-Pointer Binding energy decreases with the presence of second well. Black-Right-Pointing-Pointer Binding energy of (2,2) state can be larger than (1,1) state. Black-Right-Pointing-Pointer Central barrier can remove degeneracy of states. Black-Right-Pointing-Pointer Anticrossing between states can be induced via symmetries.

Complex titanates Sr_1_-_xPb_xLi_2Ti_6O_1_4 (0≤x≤1) as anode materials for high-performance lithium-ion batteries

International Nuclear Information System (INIS)

Qian, Shangshu; Yu, Haoxiang; Yan, Lei; Li, Peng; Lin, Xiaoting; Wu, Yaoyao; Long, Nengbing; Shui, Miao; Shu, Jie

2016-01-01

Highlights: • Sr_1_-_xPb_xLi_2Ti_6O_1_4 (0≤x≤1) is prepared by a simple solid state reaction. • Sr_0_._5Pb_0_._5Li_2Ti_6O_1_4 exhibits enhanced lithium storage capability. • Sr_0_._5Pb_0_._5Li_2Ti_6O_1_4 can deliver a capacity of 141.8 mAh g"−"1 at 700 mA g"−"1. • In-situ XRD is performed to study the reversibility of Sr_1_-_xPb_xLi_2Ti_6O_1_4. - Abstract: With the Pb doping content at Sr-site increasing, a series of Sr_1_-_xPb_xLi_2Ti_6O_1_4 (x = 0, 0.25, 0.50, 0.75, 1.0) are synthesized by a simple solid-state reaction. It is found that the reversible capacity and rate capability experience a parabolic course from SrLi_2Ti_6O_1_4 to PbLi_2Ti_6O_1_4. Among all the as-prepared samples, Sr_0_._5Pb_0_._5Li_2Ti_6O_1_4 shows the best cycling and rate properties. It delivers an initial charge capacity of 163.2 mAh g"−"1 at 100 mA g"−"1 with the capacity retention of 96.08% after 100 cycles. In addition, it can also deliver a reversible capacity of 141.8 mAh g"−"1 at 700 mA g"−"1. The superior electrochemical properties of Sr_0_._5Pb_0_._5Li_2Ti_6O_1_4 are attributed to the reduced charge transfer resistance and increased lithium-ion diffusion coefficient after doping. Besides, in-situ X-ray diffraction is also performed to investigate the lithium-ion insertion/extraction behaviors of SrLi_2Ti_6O_1_4, Sr_0_._5Pb_0_._5Li_2Ti_6O_1_4 and PbLi_2Ti_6O_1_4. The observed results confirm that Sr_0_._5Pb_0_._5Li_2Ti_6O_1_4 has good structural stability and reversibility for repeated lithium storage.

A 1Σ+ → X 1Σ+ bands of the isotopic lithium hydrides

International Nuclear Information System (INIS)

Li, K.C.; Stwalley, W.C.

1977-01-01

In order to obtain a better understanding of the X 1 Σ + ground state and the A 1 Σ + state potential energy curves of lithium hydride and to examine in detail the concept of ''mass-reduced quantum numbers'' for both an ordinary (X 1 Σ + ) and an anomalous (A 1 Σ + ) electronic state, the emission spectra of the A 1 Σ + → X 1 Σ + bands of the isotopic lithium hydrides and deuterides ere photographed in the 3000 to 5000A region with a 3.4 meter Ebert Spectrograph. The bands found involved v'' = 0 to 7 to various v' = 0 to 17 for 6 LiH, and v'' = 0 to 7 to various v' = 1 to 16 for 6 LiD. Additional bands involving v'' = 4 and 5 were also found for 7 LiH. The vibrational-rotational spectroscopic analysis of 7 LiH, 6 LiH and 6 LiD are reported here, as are the reanalyses of the 7 LiH and 7 LiD data reported by Crawford and Jorgensen. New Rydberg-Klein-Rees (RKR) A 1 Σ + and X 1 Σ + potential curves have been constructed for each individual molecule and are reported, but detailed isotopic comparisons will be reported in subsequent publications

Production and electrical parameters of La /SUB 1-x/ Ca /SUB x/ Cr /SUB 1-y/ Ni /SUB y/ O3 (x ranging from 0-0.3; y ranging from 0-1)

International Nuclear Information System (INIS)

Kononyuk, I.F.; Surmach, N.G.; Tolochko, S.P.

1986-01-01

This paper deals with the conditions for the formation of LaCr /SUB 1-y/ Ni /SUB y/ O 3 , La /SUB 1-x/ Ca /SUB x/ CrO 3 , and La /SUB 1-x/ Ca /SUB x/ Cr /SUB 1-y/ Ni /SUB y/ O 3 solid solutions and the electrical parameters of these. The initial materials were lanthanum, calcium, nickel, and chromium nitrates of pure or analytical grade. It is shown that partial replacement of lanthanum by calcium does not have any substantial effect on the electrical parameters of La /SUB 1-x/ Ca /SUB x/ Cr /SUB 1-y/ Ni /SUB y/ O 3 solid solutions for y = 0.2-0.6, but it increases the conductivity of La /SUB 1-x/ Ca /SUB x/ CrO 3 by three orders of magnitude as x varies from 0 to 0.3. The electrical parameters are virtually the same for lanthanum chromites containing calcium and strontium. The solubility of calcium in lanthanum chromite is reduced in the presence of nickel

(_1-xPu_x)Sb solid solutions. 1. Magnetic configurations

DEFF Research Database (Denmark)

Normile, P.S.; Stirling, W.G.; Mannix, D.

2002-01-01

Neutron and resonant x-ray magnetic scattering studies have been performed on single crystals of three compositions, x=0.25, 0.50, and 0.75 of the (U1-xPux)Sb solid solution. Neutron diffraction has established the ordering wave vector (k=1 for x=0.25 and 0.50, as in x=0, USb, and k=0.25 for x=0....

1-deg x 1-deg Terrestrial Mean Free-Air Anomalies

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — The 1x1 degree Terrestrial Mean Free-Air Gravity Anomaly and Geoid Undulations Data Base was compiled and developed by the Ohio State University. This data base was...

Muonium hyperfine parameters in Si1-x Ge x alloys

International Nuclear Information System (INIS)

King, Philip; Lichti, Roger; Cottrell, Stephen; Yonenaga, Ichiro

2006-01-01

We present studies of muonium behaviour in bulk, Czochralski-grown Si 1- x Ge x alloy material, focusing in particular on the hyperfine parameter of the tetrahedral muonium species. In contrast to the bond-centred species, the hyperfine parameter of the tetrahedral-site muonium centre (Mu T ) appears to vary non-linearly with alloy composition. The temperature dependence of the Mu T hyperfine parameter observed in low-Ge alloy material is compared with that seen in pure Si, and previous models of the Mu T behaviour in Si are discussed in the light of results from Si 1- x Ge x alloys

Synthesis, characterization, kinetic and thermodynamic studies of the dissolution of ThO{sub 2} and of solid solutions Th{sub 1-x}M{sub x}O{sub 2} (M = U, Pu); Synthese, caracterisation et etudes cinetique et thermodynamique de la dissolution de ThO{sub 2} et des solutions solides Th{sub 1-x}M{sub x}O{sub 2} (M = U, Pu)

Energy Technology Data Exchange (ETDEWEB)

Heisbourg, G

2003-12-01

The aim of this work was to understand the mechanisms of dissolution of ThO{sub 2} and of thorium mixed oxides such as Th{sub 1-x}U{sub x}O{sub 2} and Th{sub 1-x}Pu{sub x}O{sub 2} in aqueous, oxygenated or inert media. Several solids have been synthesized by precipitation in oxalic medium: Th{sub 1-x}U{sub x}O{sub 2} (x= 0.11; 0.24; 0.37; 0.53; 0.67; 0.81 and 0.91) and Th{sub 1-x}Pu{sub x}O{sub 2} (x= 0.13; 0.32 and 0.66). They have been characterized by XRD, SEM, TEM, XPS, XAS, PIXE and EPMA. The sintering conditions of these materials have been studied and optimized in order to obtain sintered samples with a measured density very near the theoretical densities. A kinetic study of the dissolution of ThO{sub 2} and of solid solutions Th{sub 1-x}U{sub x}O{sub 2} has been carried out in several aqueous media (HNO{sub 3}, HCl, H{sub 2}SO{sub 4}) in terms of several parameters: protons concentration, temperature, pH, ionic strength, nature of the electrolyte solution and uranium molar ratio for the solid solutions Th{sub 1-x}U{sub x}O{sub 2} in order to determine the kinetic laws of dissolution of the solid solutions having different compositions comparatively to ThO{sub 2}. The leaching tests carried out in natural waters of compositions near those of the deep geologic sites considered for the storage of nuclear wastes have shown that the dissolution of the solids was bound to the complexing effect of the constitutional ions of the water considered. The leaching tests carried out on sintered samples of the same composition have led to the same normalized dissolution velocities. The thermodynamic aspect of the dissolution of the solid solutions Th{sub 1-x}U{sub x}O{sub 2} in nitric medium has been studied at last. (O.M.)

Influence of defect structure on magnetic and electronic properties of Hg1-x Crx Se and Hg1-x Cox Se

International Nuclear Information System (INIS)

Prozorovskij, V.D.; Reshidova, I.Yu.; Puzynya, A.I.; Paranchich, Yu.S.

1996-01-01

The results of experimental investigations of the Shubnikov-de Haas oscillations at superhigh frequencies, electron spin resonance, magnetic susceptibility, relaxation dielectric losses, and galvanomagnetic measurements in the Hg 1-x Cr x Se and Hg 1-x Co x Se single crystal samples are presented. Analysis of the results Hg 1-x Cr x Se and Hg 1-x Co x Se depend on the defect structure of the substance and the type of defects making this structure. The manifestation of critical phenomena in Hg 1-x Cr x Se also depends on the defect structure

Hydrogen sorption properties of the Lasub(1-x)Casub(x)Ni5 and La(Nisub(1-x)Cusub(x))5 systems

International Nuclear Information System (INIS)

Shinar, J.; Shaltiel, D.; Davidov, D.; Grayevsky, A.

1978-01-01

The hydrogen sorption properties of the Lasub(1-x)Casub(x)Ni 5 and La(Nisub(1-x)Cusub(x)) 5 systems were investigated at various temperatures and at pressures up to 20 atm. It was found that initial substitution of La by Ca in LaNi 5 caused an increase in the hydrogen dissociation pressure, up to Casub(0.3)Lasub(0.7)Ni 5 . In the Casub(0.3)Lasub(0.7)Ni 5 -CaNi 5 range, the dissociation pressure decreased. The absorption capacity of CaNi 5 was dependent on the purity of the sample and increased significantly at low temperatures. The stability of La(Nisub(1-x)Cusub(x)) 5 hydrides increased linearly from LaNi 5 to LaCu 5 . These features are discussed in the light of existing models of ternary and pseudoternary hydride stability. Finally, the role of the measured change in entropy ΔS in determining the occupied interstitial sites in the hydride is outlined and discussed in relation to these systems. (Auth.)

Polaronic transport and thermoelectricity in Fe1 -xCoxSb2S4 (x =0 , 0.1, and 0.2)

Science.gov (United States)

Liu, Yu; Kang, Chang-Jong; Stavitski, Eli; Du, Qianheng; Attenkofer, Klaus; Kotliar, G.; Petrovic, C.

2018-04-01

We report a study of Co-doped berthierite Fe1 -xCoxSb2S4 (x =0 , 0.1, and 0.2). The alloy series of Fe1 -xCoxSb2S4 crystallize in an orthorhombic structure with the Pnma space group, similar to FeSb2, and show semiconducting behavior. The large discrepancy between activation energy for conductivity, Eρ (146 ˜270 meV ), and thermopower, ES (47 ˜108 meV ), indicates the polaronic transport mechanism. Bulk magnetization and heat-capacity measurements of pure FeSb2S4 (x =0 ) exhibit a broad antiferromagnetic transition (TN=46 K ) followed by an additional weak transition (T*=50 K ). Transition temperatures (TN and T*) slightly decrease with increasing Co content x . This is also reflected in the thermal conductivity measurement, indicating strong spin-lattice coupling. Fe1 -xCoxSb2S4 shows relatively high value of thermopower (up to ˜624 μ V K-1 at 300 K) and thermal conductivity much lower when compared to FeSb2, a feature desired for potential applications based on FeSb2 materials.

Cation mobility in NASICON compounds Li1-xZr2-xNbx(PO4)3 and Li1+xZr2-xScx(PO4)3

International Nuclear Information System (INIS)

Stenina, I.A.; Yaroslavtsev, A.B.; Aliev, A.D.; Antipov, E.V.; Velikodnyj, Yu.A.; Rebrov, A.I.

2002-01-01

Compounds featuring NASICON structure of the composition Li 1-x Zr 2-x Nb x (PO 4 ) 3 and Li 1+x Zr 2-x Sc x (PO 4 ) 3 were studied by the method of X-ray phase analysis and 7 Li and 31 P NMR. Structure of Li 0.8 Zr 1.8 Nb 0.2 (PO 4 ) 3 was refined on the basis of X-ray powder pattern. It is shown that cationic disordering in LiZr 2 (PO 4 ) 3 is stimulated both by cationic vacancies and interstitial atoms formation. The cationic vacancies are characterized by a higher mobility. The level of intrinsic disordering was estimated and the Frenkel constant for the compound was calculated [ru

X-1A in flight with flight data superimposed

Science.gov (United States)

1953-01-01

This photo of the X-1A includes graphs of the flight data from Maj. Charles E. Yeager's Mach 2.44 flight on December 12, 1953. (This was only a few days short of the 50th anniversary of the Wright brothers' first powered flight.) After reaching Mach 2.44, then the highest speed ever reached by a piloted aircraft, the X-1A tumbled completely out of control. The motions were so violent that Yeager cracked the plastic canopy with his helmet. He finally recovered from a inverted spin and landed on Rogers Dry Lakebed. Among the data shown are Mach number and altitude (the two top graphs). The speed and altitude changes due to the tumble are visible as jagged lines. The third graph from the bottom shows the G-forces on the airplane. During the tumble, these twice reached 8 Gs or 8 times the normal pull of gravity at sea level. (At these G forces, a 200-pound human would, in effect, weigh 1,600 pounds if a scale were placed under him in the direction of the force vector.) Producing these graphs was a slow, difficult process. The raw data from on-board instrumentation recorded on oscillograph film. Human computers then reduced the data and recorded it on data sheets, correcting for such factors as temperature and instrument errors. They used adding machines or slide rules for their calculations, pocket calculators being 20 years in the future. Three second generation Bell Aircraft Corporations X-1s were built, though four were requested. They were the X-1A (48-1384); X-1B (48-1385); X-1C (canceled and never built); X-1D (48-1386). These aircraft were similar to the X-1s, except they were five feet longer, had conventional canopies, and were powered by Reaction Motors, Inc. XLR11-RM-5 rocket engines. The RM-5, like the previous engines, had no throttle and was controlled by igniting one or more of the four thrust chambers at will. The original program outline called for the X-1A and X-1B to be used for dynamic stability and air loads investigations. The X-1D was to be used

Chest X-ray findings in children with influenza A (H1N1) virus infection

International Nuclear Information System (INIS)

Zhou Min; Guo Wanliang; Wang Jian

2011-01-01

Objective: To assess the chest X-ray radiographic findings in children with influenza A (H1N1) virus infection. Methods: The chest X-ray radiographs in 67 children with influenza A (H1N1) virus infection were reviewed in this study. The chest radiographs were obtained 3-8 days after the onset of symptoms and for the follow-up. Results: The abnormalities were bilateral in 53 patients and unilateral in 7 patients. The predominant radiographic findings were bilateral patchy consolidation (n=42) with rapid confluence in 10 patients, lobular consolidation (n=7) with interstitial hyperplasia in 1 patient 3 month later, diffuse consolidation (n=11) with interstitial hyperplasia in all patients after 3 month. Conclusion: The predominant chest X-ray radiographic findings are bilateral patchy consolidation and diffuse consolidation with interstitial hyperplasia afterward. (authors)

MBE growth and characterization of GaAs1-x Sb x epitaxial layers on Si (0 0 1) substrates

International Nuclear Information System (INIS)

Toda, T.; Nishino, F.; Kato, A.; Kambayashi, T.; Jinbo, Y.; Uchitomi, N.

2006-01-01

We investigated the growth of GaAs 1- x Sb x (x=1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), and micro-Raman scattering analysis. We confirmed that GaAs 1- x Sb x layers have been successfully grown on Si substrates by introducing AlSb layers

Hot phonon generation by split-off hole band electrons in AlxGa1-xAs alloys investigated by picosecond Raman scattering

International Nuclear Information System (INIS)

Jacob, J.M.; Kim, D.S.; Zhou, J.F.; Song, J.J.

1992-01-01

The initial generation of hot LO phonons by the relaxation of hot carriers in GaAs and Al x Ga 1-x As alloy semiconductors is studied. Within the initial 2ps of photoexcitation, only those electrons originating from the split-off hole bands are found to generate a significant number of I-valley hot phonons when photon energies of 2.33eV are used. A picosecond Raman scattering technique is used to determine the hot phonon occupation number in a series of MBE grown Al x Ga 1-x As samples with 0≤x≤0.39. The Stokes and anti-Stokes lines were measured for both GaAs-like and AlAs-like LO phonon modes to determine their occupation numbers. The authors observe a rapid decrease in the phonon occupation numbers as the aluminum concentration increases beyond x = 0.2. This rapid decrease is explained by considering only those electrons photoexcited from the split-off hole band. Almost all of the electrons originating from the heavy and light-hole bands are shown to quickly transfer and remain in the X and L valleys without generating significant numbers of hot LO phonons during the initial 2ps and at a carrier density of 10 17 cm -3 . A model based upon the instantaneous thermalization of hot electrons photoexcited from the split-off hole bands is used to fit the data. They have obtained very good agreement between experiment and theory. This work provides a clear understanding to the relaxation of Γ valley hot electrons by the generation of hot phonons on subpicosecond and picosecond time scales, which has long standing implications to previous time resolved Raman experiments

Biological X-ray absorption spectroscopy (BioXAS): a valuable tool for the study of trace elements in the life sciences.

Science.gov (United States)

Strange, Richard W; Feiters, Martin C

2008-10-01

Using X-ray absorption spectroscopy (XAS) the binding modes (type and number of ligands, distances and geometry) and oxidation states of metals and other trace elements in crystalline as well as non-crystalline samples can be revealed. The method may be applied to biological systems as a 'stand-alone' technique, but it is particularly powerful when used alongside other X-ray and spectroscopic techniques and computational approaches. In this review, we highlight how biological XAS is being used in concert with crystallography, spectroscopy and computational chemistry to study metalloproteins in crystals, and report recent applications on relatively rare trace elements utilised by living organisms and metals involved in neurodegenerative diseases.

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Watanabe, Tomohito; Kimura, Shogo; Zhang, Yang; Lozac'h, Mickael; Sang, Liwen; Sumiya, Masatomo; Ishibashi, Shoji; Oshima, Nagayasu; Suzuki, Ryoichi

2013-01-01

Native defects in In x Ga 1−x N layers grown by metalorganic chemical vapor deposition were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for a 200-nm-thick In 0.13 Ga 0.87 N layer showed that vacancy-type defects were introduced by InN alloying, and the major species of such defects was identified as complexes between a cation vacancy and nitrogen vacancies. The presence of the defects correlated with lattice relaxation of the In 0.13 Ga 0.87 N layer and the increase in photon emissions from donor-acceptor-pair recombination. The species of native defects in In 0.06 Ga 0.94 N layers was the same but its concentration was decreased by decreasing the InN composition. With the layer thickness increased from 120 nm to 360 nm, a defect-rich region was introduced in the subsurface region (<160 nm), which can be associated with layer growth with the relaxation of compressive stress

Cray X1 Evaluation Status Report

Energy Technology Data Exchange (ETDEWEB)

Vetter, J.S.

2004-02-09

On August 15, 2002 the Department of Energy (DOE) selected the Center for Computational Sciences (CCS) at Oak Ridge National Laboratory (ORNL) to deploy a new scalable vector supercomputer architecture for solving important scientific problems in climate, fusion, biology, nanoscale materials and astrophysics. ''This program is one of the first steps in an initiative designed to provide U.S. scientists with the computational power that is essential to 21st century scientific leadership,'' said Dr. Raymond L. Orbach, director of the department's Office of Science The Cray X1 is an attempt to incorporate the best aspects of previous Cray vector systems and massively-parallel-processing (MPP) systems into one design. Like the Cray T90, the X1 has high memory bandwidth, which is key to realizing a high percentage of theoretical peak performance. Like the Cray T3E, the X1 has a high-bandwidth, low-latency, scalable interconnect, and scalable system software. And, like the Cray SV1, the X1 leverages commodity off-the-shelf (CMOS) technology and incorporates non-traditional vector concepts, like vector caches and multi-streaming processors. In FY03, CCS procured a 256-processor Cray X1 to evaluate the processors, memory subsystem, scalability of the architecture, software environment and to predict the expected sustained performance on key DOE applications codes. The results of the micro-benchmarks and kernel benchmarks show the architecture of the Cray X1 to be exceptionally fast for most operations. The best results are shown on large problems, where it is not possible to fit the entire problem into the cache of the processors. These large problems are exactly the types of problems that are important for the DOE and ultra-scale simulation.

X-1E launch from B-50 mothership

Science.gov (United States)

1950-01-01

Beginning in 1946, two XS-1 experimental research aircraft (later redesignated X-1s) conducted pioneering tests at Muroc Army Air Field (now Edwards Air Force Base) in California to obtain flight data on conditions in the transonic speed range. These early tests culminated on October 14, 1947, in the first piloted flight faster than Mach 1.0, the speed of sound. During November, 1947, the Air Force authorized studies that led to a contract (W-33-038-ac-20062) with Bell Aircraft to build four (later three) improved X-1 aircraft (the X-1C being cancelled). Designated X-1A (#48-1384), X-1B (#48-1385), and X-1D (#48-1386), the airplanes were ready by late 1950. The aircraft were about five feet longer and 2,500 lbs. heavier than the original X-craft planes. They used the 8-percent wing like the earlier X-craft. The D-model had a low-pressure turbo-pump and the B model was fitted with a prototype hydrogen peroxide reaction control system for later aircraft to use in exoatmospheric research flights. Access was through a lift-off canopy. The planes were finished in their bare metal color and white. The X-1D was ready first, but on what was intended to be its second flight (August 22, 1951) it was jettisoned and crashed at Muroc after an aerial explosion while still mated to its mother (B-50A [#46-006A]) ship. The long-delayed X-1 #3 airplane with the turbine pump was finally completed for the NACA in 1951. It made its first glide flight on July 20, 1951, with NACA pilot Joseph Cannon. Its second and final captive flight was on November 9, 1951. It was destroyed on the ground by an explosion and fire along with its B-50A mother ship while attempting to jettison fuel. The X-1A arrived at Muroc in January, 1953 and had its first powered flight on February 21, 1953. On December 8, 1953 with Yeager as pilot, the aircraft investigated high-speed stability and control issues. The X-1A was turned over to the NACA, but was lost to aerial explosion on August 8, 1955, shortly before

Magnetic and crystallographic properties of Gd(Cu/sub 1-x/Ni/sub x/)2 and Gd(Cu/sub 1-x/Al/sub x/)2 intermetallic compounds

International Nuclear Information System (INIS)

Borombaev, M.K.; Levitin, R.Z.; Markosyan, A.S.; Snegirev, V.V.

1986-01-01

Magnetization, paramagnetic susceptibility, and temperature dependence of lattice parameters of Gd(Cu/sub 1-x/Ni/sub x/) 2 (0 2 (0 2 -type structure have been studied in a wide range of temperatures. Below the ordering temperature anomalies in thermal expansion along the crystallographic axes a, b, and c enabled to distinguish between various types of magnetic arrangements. The Gd(Cu/sub 1-x/Ni/sub x/) 2 system has two types of antiferromagnetic phases: AF1 (0 = 0.13 the system orders ferromagnetically. In the Gd(Cu/sub 1-x/Al/sub x/) 2 system two magnetic phases AF1 and AF3 occur in the concentration regions 0 <= x <= 0.035 and 0.04 <= x <= 0.07, respectively. The obtained results are discussed in terms of the RKKY model via the changing conduction electron concentration. (author)

Modulation of electronic and optical properties in mixed halide perovskites CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x)

Science.gov (United States)

Zhou, Ziqi; Cui, Yu; Deng, Hui-Xiong; Huang, Le; Wei, Zhongming; Li, Jingbo

2017-03-01

The recent discovery of lead halide perovskites with band gaps in the visible presents important potential in the design of high efficient solar cells. CsPbCl3, CsPbBr3 and CsPbI3 are stable compounds within this new family of semiconductors. By performing the first-principles calculation, we explore the structural, electronic and optical properties of CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x) with various compositions of halide atoms. Structural stability is demonstrated with halide atoms distributing randomly at the halide atomic sites. CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x) exhibit the modulation of their band gaps by varying the halide composition. Our results also indicate that CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x) with different halide compositions are suitable to application to solar cells for the general features are well preserved. Good absorption to lights of different wavelengths has been obtained in these mixed halide perovskites.

Utilization of synchrotron radiation in analytical chemistry. Soft X-ray emission and absorption spectroscopy

International Nuclear Information System (INIS)

Muramatsu, Yasuji

2015-01-01

Synchrotron soft X-ray spectroscopy includes three major types of spectroscopy such as X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES), and X-ray photoelectron spectroscopy (XPS). This paper takes up XAS and XES of soft X-rays, and briefly describes the principle. XAS is roughly classified into XANES (X-ray absorption near-edge structure) and EXAFS (extended X-ray absorption fine structure), and XANES is mainly used in the analysis based on XAS of soft X-rays. As the examples of the latest soft X-ray analyses, the following are introduced: (1) bandgap of boron implantation diamond and the local structure of boron, (2) catalytic sites in solid fuel cell carbon electrode, and (3) soft X-ray analysis under atmospheric pressure. (A.O.)

Multielectronic conduction in La1-xSrxGa1/2Mn1/2O3-δ as solid oxide fuel cell cathode

Science.gov (United States)

Iguchi, E.; Hashimoto, Y.; Kurumada, M.; Munakata, F.

2003-08-01

Four-probe dc conductivities, capacitances, and thermopower have been measured in the temperature range of 80-1123 K for La1-xSrxGa1/2Mn1/2O3-δ, which is a desirable cathode material for lanthanum-gallate electrolytes of solid oxide fuel cells. The dc conductivities in the specimens (0.1⩽x⩽0.3) are insensitive to x but the thermopower is very sensitive to x, although the x=0 specimen exhibits a somewhat different conduction behavior. At T500 K, the band conduction dominates the electronic transports. The ionic conduction due to O2- migration seems difficult to contribute directly to the dc conduction even at high temperature.

Anisotropic perpendicular axis magnetostriction in twinned TbxDy1-xFe1.95

International Nuclear Information System (INIS)

Teter, J.P.; Wun-Fogle, M.; Clark, A.E.; Mahoney, K.

1990-01-01

The longitudinal magnetostriction (Δl/l) for twinned Tb x Dy 1-x Fe 1.95 material, prepared by the free-standing float-zone method, has been previously measured and found to be very large (2000x10 -6 ) at room temperature. The magnetostrictions for the [111] and [1 bar 10] crystallographic axes perpendicular to the applied stress and magnetic-field [11 bar 2] direction are presented as functions of temperature, applied stress, and applied magnetic field. The temperature range is ±60 degree C centered about the anisotropy compensation temperature of Terfenol-D (+10 degree C). The stress ranges from 2 to 32 MPa and the magnetic field to ±2000 Oe. The temperature dependence of the perpendicular axes magnetostriction is similar to that of the conventional magnetostriction measured parallel to the [11 bar 2] growth axis. Relative values for the saturation magnetostriction exhibit a large anisotropy in the perpendicular direction, ranging from -117% for the [111] to +19% for the [1 bar 10] direction. This ratio stays constant as a function of temperature above the compensation temperature for a given prestress above 8 MPa. The largest absolute value of magnetostriction (2260x10 -6 ) occurs in the [111] direction at 10 degree C at a prestress pressure of 12 MPa. Above this temperature the magnetostriction falls at a rate of -8.5x10 -6 /degree C. The volume magnetostriction is shown to be small and highly sample dependent. All data is consistent with the parent-twin magnetization model and also the magnetostriction values along nonprincipal axes

Planar Large Core Polymer Optical 1x2 and 1x4 Splitters Connectable to Plastic Optical Fiber

Directory of Open Access Journals (Sweden)

V. Prajzler

2013-09-01

Full Text Available We report about new approach to design and fabricate multimode 1 x 2 and 1 x 4 Y optical planar power splitter suitable for low-cost short distance optical network. The splitters were designed by beam propagation method using BeamPROP™ software. The dimensions of the splitters were optimized for connecting standard plastic optical fibre with 1 mm diameter. New Norland Optical Adhesives 1625 glues were used as optical waveguide layers and the design structures were completed by CNC engraving on poly(methyl methacrylate substrate. The best parameters that were achieved with 1x2 splitter were insertion loss around 4.1dB at 650 nm and the coupling ratio 52:48; the best one of the 1x4 splitters had at 650 nm insertion loss around 17.6 dB.

Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

Science.gov (United States)

Samajdar, D P; Dhar, S

2014-01-01

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

Transport and superconducting properties of Fe-based superconductors: a comparison between SmFeAsO1-xFx and Fe1+yTe1-xSex

Science.gov (United States)

Tropeano, M.; Pallecchi, I.; Cimberle, M. R.; Ferdeghini, C.; Lamura, G.; Vignolo, M.; Martinelli, A.; Palenzona, A.; Putti, M.

2010-05-01

In this paper we carry out a direct comparison between transport and superconducting properties—namely resistivity, magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, upper critical field—of two different families of Fe-based superconductors, which can be viewed in many respects as end members: SmFeAsO1 - xFx with the largest Tc and the largest anisotropy and Fe1 + yTe1 - xSex, with the largest Hc2, the lowest Tc and the lowest anisotropy. In the case of the SmFeAsO1 - xFx series, we find that a single-band description allows us to extract an approximate estimation of band parameters such as carrier density and mobility from experimental data, although the behaviour of the Seebeck effect as a function of doping demonstrates that a multiband description would be more appropriate. On the contrary, experimental data for the Fe1 + y(Te1 - x, Sex) series exhibit a strongly compensated behaviour, which can be described only within a multiband model. In the Fe1 + y(Te1 - x, Sex) series, the role of the excess Fe, tuned by Se stoichiometry, is found to be twofold: on one hand it dopes electrons in the system and on the other hand it introduces localized magnetic moments, responsible for Kondo like scattering and likely pairbreaking of Cooper pairs. Hence, Fe excess also plays a crucial role in determining superconducting properties such as the Tc and the upper critical field Hc2. The huge Hc2 values of the Fe1 + yTe1 - xSex samples are described by a dirty limit law, opposed to the clean limit behaviour of the SmFeAsO1 - xFx samples. Hence, magnetic scattering by excess Fe seems to drive the system in the dirty regime, but its detrimental pairbreaking role seems not to be as severe as predicted by theory. This issue has yet to be clarified, addressing the more fundamental issue of the interplay between magnetism and superconductivity.

Magnetic properties of CexY1-xPt compared to CexLa1-xPt ones

Science.gov (United States)

Očko, M.; Zadro, K.; Drobac, Đ.; Aviani, I.; Salamon, K.; Mixon, D.; Bauer, E. D.; Sarrao, J. L.

2018-04-01

We have investigated the magnetic properties of the CexY1-xPt Kondo ferromagnetic alloy system in the temperature range from 1.8 K to 320 K. The results of these investigations can be summarized as follows: dc-susceptibility can be described by the Curie-Weiss law at higher temperatures down to about 100 K, but also at low temperatures above the ferromagnetic phase transition. At higher temperatures, the extracted Curie-Weiss parameter, θp, is negative and at low temperature θC is positive. The extracted effective magnetic moment above 100 K increases with the Ce content up to almost the theoretical value of the isolated Ce3+ ion, μ = 2.54 μB, for CePt. This suggests an increase of the hybridization with decreasing Ce content, or said equivalently, it means that the increase of the Kondo interaction diminishes effective magnetic moment. These observations confirm the main conclusions inferred from an earlier transport properties investigation of this alloy system. The corresponding θC differs within 1 K from the Curie temperature, TC, which is determined by the resistivity measurements. The most intriguing result of the investigation of CexY1-xPt is the linear concentration dependence of TC vs. x and, moreover, it is the same as in CexLa1-xPt although in the former system the hybridization diminishes considerably the effective magnetic moment per Ce ion, while in the latter system, hybridization is minor and independent of x. We offer the explanations of these intriguing experimental results.

Synthesis of single phase chalcopyrite CuIn1−xGaxSe2 (0 ≤ x ≤ 1) nanoparticles by one-pot method

International Nuclear Information System (INIS)

Han, Zhaoxia; Zhang, Dawei; Chen, Qinmiao; Hong, Ruijin; Tao, Chunxian; Huang, Yuanshen; Ni, Zhengji; Zhuang, Songlin

2014-01-01

Graphical abstract: - Highlights: • A facile and rapid one-pot synthesis method is presented. • The effects of various Ga contents are investigated. • Single phase chalcopyrite CuIn 1−x Ga x Se 2 nanoparticles can be easily synthesized. • The phase formation sequence is from CuSe to CuGaSe 2 , then to CuIn 1−x Ga x Se 2 . • The possible reaction mechanism of CuIn 1−x Ga x Se 2 nanoparticles is proposed. - Abstract: Single phase chalcopyrite and near stoichiometric CuIn 1−x Ga x Se 2 (0 ≤ x ≤ 1) nanoparticles were successfully synthesized by using a facile and rapid one-pot method. The effects of various Ga contents on crystal phase, morphology, element composition and absorption spectrum of the as-synthesized CuIn 1−x Ga x Se 2 nanoparticles were investigated in detail. The XRD and Raman patterns indicated that the as-synthesized nanoparticles had a single phase chalcopyrite structure, and the diffraction peaks shifted toward larger diffraction angles or higher frequencies with increasing Ga content. The FE-SEM images showed that the as-synthesized nanoparticles were polydispersed in both size and shape, and the nanoparticles with higher Ga content were more prone to aggregate. The Vis–IR absorption spectra showed strong absorption in the entire visible light region. The estimated band gap increased from 1.00 eV to 1.68 eV as Ga content increasing

Hydrogen absorption in CexGd1−x alloys

International Nuclear Information System (INIS)

Bereznitsky, M.; Bloch, J.; Yonovich, M.; Schweke, D.; Mintz, M.H.; Jacob, I.

2012-01-01

Highlights: ► Ce x Gd 1−x alloys exhibit the most negative heats of hydride formation ever found. ► Thermodynamics of H absorption in Ce x Gd 1−x correlates with the alloys hardness. ► The entropies of H solution and hydride formation reflect the hydrogen vibrations. ► Terminal hydrogen solubilities change in a monotonic way between Ce and Gd. - Abstract: The effect of alloying on the thermodynamics of hydrogen absorption was studied for Ce x Gd 1−x alloys (0 ≤ x ≤ 1) at temperatures between 850 K and 1050 K in the 1–10 −4 Torr pressure range. The temperature-dependent hydrogen solubilities and plateau pressures for hydride formation were obtained from hydrogen absorption isotherms. The terminal hydrogen solubility (THS) at a given temperature changes in a monotonic way as a function of x. It is approximately three times higher in Gd, than in Ce, throughout the investigated temperature range. This monotonic behavior is opposed to that of many other substitutional alloys, for which the hydrogen terminal solubility increases with increasing solute concentrations. The enthalpies, ΔH f , and the entropies, ΔS f , of the dihydride formation exhibit a pronounced and broad negative minimum starting at x ≈ 0.15, yielding the most negative ΔH f values ever found for metal hydrides. On the other hand, the enthalpies and entropies of ideal solution display a positive trend at x = 0.15 and x = 0.3. Both behaviors are considered in view of a reported distinct variation of the Ce x Gd 1−x hardness as a function of x. The particular compositional variations of the entropies of solution and formation as a function of x reflect most likely the vibrational properties of the hydrogen atoms in the metal matrices.

Interpretation of the Raman spectra of the glassy states of SixS1−x and SixSe1−x

International Nuclear Information System (INIS)

Devi, V. Radhika; Zabidi, Noriza Ahmad; Shrivastava, Keshav N.

2013-01-01

We use the density-functional theory to make models of Si x S y and Si x Se y for the values of x,y = 1–6. The vibrational frequencies are calculated for each model. The stable clusters are selected on the basis of positive vibrational frequencies. In the case of Si x S 1−x , the values of the vibrational frequencies calculated from the first principles for Si 2 S(triangular)cluster of atoms, 364.1 cm −1 and 380.8 cm −1 , agree with the experimentally measured values of 367 cm −1 and 381 cm −1 , indicating that Si 2 S clusters occur in the glassy state of SiS. The calculated values of the vibrational frequencies of SiSe 4 (pyramidal) which agree with the experimental Raman frequencies of glassy Si x Se 1−x are 114, 166 and 361 cm −1 . The calculated values for Si 2 Se 4 (bipyramidal) which agree with the experimental data of Si x Se 1−x are 166 and 464 cm −1 . In Si 4 Se (pyramidal) the values 246 and 304 cm −1 agree with the measured values. In Si 4 Se 2 (bipyramidal), the calculated values 162, 196 and 304 cm −1 agree with the measured values. The calculated values of 473 cm −1 for Si 6 Se 2 (bipyramidal) also agree with the experimentally measured values. We thus find that pyramidal structures are present in the amorphous Si x Se 1−x glassy state. - Highlights: • A first principles calculation is performed to calculate the vibrational frequencies. • The calculated frequencies of clusters agree with measured Raman values. • The structures, bond lengths and symmetries are determined. • The importance of Jahn–Teller effect in SiS and in SiSe is clearly seen. • The clusters of SiS and SiSe are found to stabilize in different symmetries

Modulation-free bismuth-lead cuprate superconductors: BiPbSr1+xL1-xCuO6 and BiPbSr2Y1-xCaxCu2O8

International Nuclear Information System (INIS)

Manivannan, V.; Gopalakrishnan, J.; Rao, C.N.R.

1991-01-01

Modulation-free BiPbSrLCuO 6 (L=La, Pr, Nd) and BiPbSr 2 YCu 2 O 8 , which are isotypic with the n=1 and 2 members of the Bi 2 Sr 2 Ca n-1 Cu n O 2n+4 family, have been prepared and characterized. These parent compounds are nonsuperconducting, but when doped with holes by substitution chemistry give modulation-free superconducting cuprates of the general formulas BiPbSr 1+xL1-x CuO 6 and BiPbSr 2 Y 1-x Ca x Cu 2 O 8 , exhibiting maximum T c 's of 24 and 85 K, respectively. Significantly, the hole concentration at the maximum T c is 0.12 in the cuprate family with a single Cu-O layer and 0.22 in that with two Cu-O layers

Faraday effect in Hg1-xMnxTe semimagnetic semiconductors

International Nuclear Information System (INIS)

Savchuk, A.I.; Frasunyak, V.M.; Fediv, V.I.

1995-01-01

Results on studies of spectral and temperature dependencies of the Faraday rotation in the Hg 1-x Mn x Te semiconductors are presented. It is shown that the Faraday rotation spectral dependence in the Hg 1-x Mn x Te crystals corresponds to model of the Faraday giant effect in other A 1-x 2 Mn x B 6 semimagnetic semiconductors, caused by strong exchange interaction between Mn d-electrons and s,p - zone carriers. The phase transition into the glass spin state is observed in the Hg 1-x Mn x Te crystals with Mn high content. 5 refs.; 2 figs

Band structure of Mgsub(x)Znsub(1-x)Te alloys

International Nuclear Information System (INIS)

Laugier, A.; Montegu, B.; Barbier, D.; Chevallier, J.; Guillaume, J.C.; Somogyi, K.

1980-01-01

The band structure of Mgsub(x)Znsub(1-x)Te alloys is studied using a double beam wavelength modulated system in first derivative mode. Modulated reflectivity measurements are made from 82 to 300 K within spectral range 2500 to 5400 A. Structures corresponding to the E 0 , E 0 + Δ 0 , E 1 , E 1 + Δ 1 , e 1 and e 1 + Δ 1 critical points are indexed on the basis of existing band calculations for ZnTe. (author)

Oxygen transport in La1-xSrxFe1-yMnyO3-δ perovskites

DEFF Research Database (Denmark)

Mikkelsen, L.; Andersen, I.G.K.; Skou, E.M.

2002-01-01

The oxygen transport in La1-xSrxFe1-yMnyO3-delta (LSFM) with 0 less than or equal to x less than or equal to 0.5 and y = 0.2 and 03 has been examined with a thermogravimetric method. As long as x less than or equal to y, the oxygen transport was found to be very slow while the oxygen transport in...

SU(2) x U(1) x U'(1) models which are slightly different from the Weinberg-Salam model

International Nuclear Information System (INIS)

Gao, C.; Wu, D.

1981-01-01

We discuss SU(2) x U(1) x U'(1) models by a uniform formula which is convenient for their comparison with the standard Weinberg-Salam model. As examples, we give three interesting models which are based on different grand unification models. In one model, U'(1) does not contribute to the electromagnetic interaction; in the other two, both U(1) and U'(1) do contribute to the electromagnetic interaction. Also, the first two models can approach the standard Weinberg-Salam model as close as one wants; but the third model has limitations on it

Liver X receptor α and farnesoid X receptor are major transcriptional regulators of OATP1B1.

Science.gov (United States)

Meyer Zu Schwabedissen, Henriette E; Böttcher, Kerstin; Chaudhry, Amarjit; Kroemer, Heyo K; Schuetz, Erin G; Kim, Richard B

2010-11-01

Organic anion transporting polypeptide 1B1 (OATP1B1) is a liver-enriched transporter involved in the hepatocellular uptake of many endogenous molecules and several structurally divergent drugs in clinical use. Although OATP1B1 coding region polymorphisms are known to make an impact on substrate drug disposition in humans, little is known regarding the mechanisms underlying the transcriptional regulation of this transporter. In this study, we note that messenger RNA (mRNA) expression of OATP1B1 in a large human liver bank exhibited marked interindividual variability that was not associated with coding region polymorphisms. Accordingly, we hypothesized that such variability in expression is reflective of nuclear receptor-mediated transcriptional regulation of this transporter. We tested prototypical ligands for the nuclear receptors pregnane X receptor (PXR), constitutive androstane receptor (CAR), liver X receptor (LXR) α, and farnesoid X receptor (FXR) in a human hepatoma-derived cell line and noted induction of OATP1B1 mRNA when the cells were treated with LXRα or FXR ligands. To confirm a direct role for LXRα and FXR to OATP1B1 expression, we performed detailed promoter analysis and cell-based reporter gene assays resulting in the identification of two functional FXR response elements and one LXRα response element. The direct interaction between nuclear receptors with the identified response elements was assessed using chromatin immunoprecipitation assays. Using isolated primary human hepatocytes, we show that LXRα or FXR agonists, but not PXR or CAR agonists, are capable of OATP1B1 induction. We note that OATP1B1 transcriptional regulation is under dual nuclear receptor control through the oxysterol sensing LXRα and the bile acid sensor FXR. Accordingly, the interplay between OATP1B1 and nuclear receptors may play an important and heretofore unrecognized role during cholestasis, drug-induced liver injury, and OATP1B1 induction-related drug interactions.

Electrochemical probings of Li1+xVS2

International Nuclear Information System (INIS)

Gupta, Asha; Mullins, C. Buddie; Goodenough, John B.

2012-01-01

Re-investigation of Li insertion into the layers of Li 1+x V 1−y M y S 2 (M = Cr, Ni and y = 0 and 0.1, x ≤ 0.8) reveals that the transformation of Li from octahedral to tetrahedral sites in Li 1+x VS 2 leads to a 1.0 V stabilization V(III)/V(II) plateau at 0.1C rate. Substitution of 10 mol% Ni for V to form Li 1+x V 0.9 Ni 0.1 S 2 increases the voltage on Li insertion by 0.1–0.2 V compared to nominal LiVS 2 , but it leads to an overall decrease in the capacity. An irreversible capacity loss on the initial charge/discharge cycle is the result of formation of an SEI layer at and below 1 V versus lithium. 10 mol% substitution of Cr for V (i.e. Li 1+x V 0.9 Cr 0.1 S 2 ) has no effect on the voltage, but it increases the capacity fade as the discharge/charge cycles progress.

Dielectric studies of Co3-xMnxO4 (x=0.1-1.0) cubic spinel multiferroic

Science.gov (United States)

Meena, P. L.; Kumar, Ravi; Prajapat, C. L.; Sreenivas, K.; Gupta, Vinay

2009-07-01

A series of Co3-xMnxO4 (x =0.1-1.0) multiferroic cubic spinel ceramics were prepared to study the effect of Mn substitution at Co site on the crystal structures and dielectric properties. No significant change in the structural symmetry was observed with increasing x up to 1.0. A linear increase in lattice parameter with x is attributed to the substitution of Co3+ by Mn3+ (large ionic radii) at the octahedral sites. An antiferromagnetic-type ordering of Co3O4 changes to ferrimagnetic-type order after incorporation of Mn. The effect of Mn substitution on the dielectric constant and loss tangent was studied over a wide range of frequency (75 kHz-5 MHz) and temperature of 150-450 K. The measured value of room temperature ac conductivity at 1.0 MHz was found to increase from 2.0×10-6 to 4.4×10-4 Ω-1 cm-1 and follows power law (σac=Aωs) behavior. The dielectric constant ɛ'(ω) shows a weak frequency dispersion and small temperature dependence below 250 K for all ceramic samples. However, a strong temperature and frequency dependence on ɛ'(ω) was observed at higher temperature (>250 K). The temperature dependent ɛ'(ω) data show the existence of room temperature ferroelectricity in all prepared samples.

Interpretation of the Raman spectra of the glassy states of Si{sub x}S{sub 1−x} and Si{sub x}Se{sub 1−x}

Energy Technology Data Exchange (ETDEWEB)

Devi, V. Radhika [M.L.R. Institute of Technology, Affiliated to Jawaharlal Nehru Technological University, Dundigal, Hyderabad 500043 (India); Zabidi, Noriza Ahmad [Department of Physics, Centre for Defence Foundation Studies, National Defence University of Malaysia, Kem Sungai Besi, Kuala Lumpur 57000 (Malaysia); Shrivastava, Keshav N., E-mail: keshav1001@yahoo.com [School of Physics, University of Hyderabad, Hyderabad 50046 (India); Department of Physics, University of Malaya, Kuala Lumpur 50603 (Malaysia)

2013-09-16

We use the density-functional theory to make models of Si{sub x}S{sub y} and Si{sub x}Se{sub y} for the values of x,y = 1–6. The vibrational frequencies are calculated for each model. The stable clusters are selected on the basis of positive vibrational frequencies. In the case of Si{sub x}S{sub 1−x}, the values of the vibrational frequencies calculated from the first principles for Si{sub 2}S(triangular)cluster of atoms, 364.1 cm{sup −1} and 380.8 cm{sup −1}, agree with the experimentally measured values of 367 cm{sup −1} and 381 cm{sup −1}, indicating that Si{sub 2}S clusters occur in the glassy state of SiS. The calculated values of the vibrational frequencies of SiSe{sub 4} (pyramidal) which agree with the experimental Raman frequencies of glassy Si{sub x}Se{sub 1−x} are 114, 166 and 361 cm{sup −1}. The calculated values for Si{sub 2}Se{sub 4} (bipyramidal) which agree with the experimental data of Si{sub x}Se{sub 1−x} are 166 and 464 cm{sup −1}. In Si{sub 4}Se (pyramidal) the values 246 and 304 cm{sup −1} agree with the measured values. In Si{sub 4}Se{sub 2} (bipyramidal), the calculated values 162, 196 and 304 cm{sup −1} agree with the measured values. The calculated values of 473 cm{sup −1} for Si{sub 6}Se{sub 2} (bipyramidal) also agree with the experimentally measured values. We thus find that pyramidal structures are present in the amorphous Si{sub x}Se{sub 1−x} glassy state. - Highlights: • A first principles calculation is performed to calculate the vibrational frequencies. • The calculated frequencies of clusters agree with measured Raman values. • The structures, bond lengths and symmetries are determined. • The importance of Jahn–Teller effect in SiS and in SiSe is clearly seen. • The clusters of SiS and SiSe are found to stabilize in different symmetries.

Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

Energy Technology Data Exchange (ETDEWEB)

Ridgway, M.C.; Elliman, R.G.; Rao, M.R. [Australian National Univ., Canberra, ACT (Australia); Baribeau, J.M. [National Research Council of Canada, Ottawa, ON (Canada)

1993-12-31

Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

Energy Technology Data Exchange (ETDEWEB)

Ridgway, M C; Elliman, R G; Rao, M R [Australian National Univ., Canberra, ACT (Australia); Baribeau, J M [National Research Council of Canada, Ottawa, ON (Canada)

1994-12-31

Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

Hydrogen absorption/desorption characteristics of room temperature ZrMn2-xNix system (x = 1.25-1.50)

International Nuclear Information System (INIS)

Kumar, Vinod; Pukazhselvan, D.; Singh, S.K.; Tyagi, A.K.

2014-01-01

The present communication deals with the hydrogen storage characteristics of C15 laves phase ZrMn 2-x Ni x system tailored within the x values of 1.25 to 1.50. Drastic variations in thermodynamics of the hydride phase is observed for any little changes of concentration x within this narrow range. The most promising room temperature hydrogen storage materials are found to be formed within the range of 1.35 to 1.45 where ∼ 2.5 to 2.9 H/F.U. can be reversibly stored under the ideal operating conditions. The heat of the reaction is found to be ∼ 17 kJ/mol, which means these are promising candidates for stationary and short range mobile applications. The phase structural features and the thermodynamic aspects of all the materials are discussed in detail. (author)

Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

International Nuclear Information System (INIS)

Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

2006-01-01

In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

An extended X-ray low state from Hercules X-1

International Nuclear Information System (INIS)

Parmar, A.N.; White, N.E.; Barr, P.; Pietsch, W.; Truemper, J.; Voges, W.; McKechnie, S.

1985-01-01

Hercules X-1 exhibits a 35-day cycle in its X-ray intensity in addition to its pulsar rotational and orbital periodicities of 1.24s and 1.7 days respectively. The authors report here observations made with the EXOSAT Observatory between 1983 June and August that failed to detect the expected 35-day variation in X-ray intensity, although low-level extended X-ray emission was seen. The EXOSAT observations suggest that a temporary change in the disk structure may have occurred such that the disk was in the line of sight throughout. (author)

Model and experimental investigation of frequency conversion in AgGaGexS2(1+x) (x = 0, 1) crystals

International Nuclear Information System (INIS)

Wang Tiejun; Kang Zhihui; Zhang Hongzhi; Feng Zhishu; Jiang Yun; Gao Jinyue; Andreev, Yury M; Lanskii, Gregory V; Shaiduko, Anna V

2007-01-01

Analysis of available and developed data on phase matching in AgGaGe x S 2(1+x) (x = 0, 1) crystals is carried out. Nanosecond AgGaS 2 type I optical parametric oscillator with a continuously tunable range 2.65-5.29 μm is demonstrated pumped by a Q-switched Nd : YAG laser. An output pulse energy of up to 0.56 mJ at 4 μm is recorded. Phase matching of second harmonic generation in both crystals is represented. Best sets of Sellmeier equations for two crystals are determined

Viscous behavior of (Sn61.9Pb38.1)100-xREx (x=0, 0.1, 0.3, 1 wt%) solder alloys

International Nuclear Information System (INIS)

Wu Yuqin; Bian Xiufang; Zhao Yan; Li Xuelian; Zhang Yanning; Tian Yongsheng; Lv Xiaoqian

2008-01-01

The viscous behavior of (Sn 61.9 Pb 38.1 ) 100-x RE x (x=0, 0.1, 0.3, 1 wt%) solder alloys has been investigated by a torsional oscillation viscometer. The structural transition temperature T ' increases with increasing addition of RE elements. Above T ' , the viscosities of melts increase with increasing addition of RE, and are fitted well with the Arrhenius equation. The time dependence of viscosity at the measured temperature below T ' follows the exponential relaxation function and reflects the process of the structural transition in the melt, which can be considered as the thermodynamic equilibrium process. The thermodynamic equilibrium relaxation time τ eq increases with both the equilibrium viscosity η eq and the discrepancy in viscosity (Δη), between the initial state and the equilibrium state. However, it decreases with the measured temperature T. The size of clusters in the melts increases with increasing of viscosity and is restricted by the thermodynamic equilibrium conditions

Language Learning Actions in Two 1x1 Secondary Schools in Catalonia: The Case of Online Language Resources

Science.gov (United States)

Calvo, Boris Vázquez; Cassany, Daniel

2016-01-01

This paper identifies and describes current attitudes towards classroom digitization and digital language learning practices under the umbrella of EduCAT 1x1, the One-Laptop-Per-Child (OLPC or 1x1) initiative in place in Catalonia. We thoroughly analyze practices worked out by six language teachers and twelve Compulsory Secondary Education (CSE)…

Analytical Solutions for the Surface States of Bi1-xSbx (0 ≤ x ≲ 0.1)

Science.gov (United States)

Fuseya, Yuki; Fukuyama, Hidetoshi

2018-04-01

Analytical solutions for the surface state (SS) of an extended Wolff Hamiltonian, which is a common Hamiltonian for strongly spin-orbit coupled systems, are obtained both for semi-infinite and finite-thickness boundary conditions. For the semi-infinite system, there are two types of SS solutions: (I-a) linearly crossing SSs in the direct bulk band gap, and (I-b) SSs with linear dispersions entering the bulk conduction or valence bands away from the band edge. For the finite-thickness system, a gap opens in the SS of solution I-a. Numerical solutions for the SS are also obtained based on the tight-binding model of Liu and Allen [https://doi.org/10.1103/PhysRevB.52.1566" xlink:type="simple">Phys. Rev. B 52, 1566 (1995)] for Bi1-xSbx (0 ≤ x ≤ 0.1). A perfect correspondence between the analytic and numerical solutions is obtained around the \\bar{M} point including their thickness dependence. This is the first time that the character of the SS numerically obtained is identified with the help of analytical solutions. The size of the gap for I-a SS can be larger than that of bulk band gap even for a "thick" films ( ≲ 200 bilayers ≃ 80 nm) of pure bismuth. Consequently, in such a film of Bi1-xSbx, there is no apparent change in the SSs through the band inversion at x ≃ 0.04, even though the nature of the SS is changed from solution I-a to I-b. Based on our theoretical results, the experimental results on the SS of Bi1-xSbx (0 ≤ x ≲ 0.1) are discussed.

Structural and magnetic studies of the Co{sub 1+x}Ti{sub x}Fe{sub 2(1−x)}O{sub 4} ferrites

Energy Technology Data Exchange (ETDEWEB)

Amer, M.A., E-mail: moazamer@hotmail.com

2017-03-15

The cubic spinel Co{sub 1+x}Ti{sub x}Fe{sub 2(1−x)}O{sub 4} ferrites, 0.0≤x≤0.5, were prepared by the standard ceramic technique. The samples were examined using the techniques; XRD, FT-IR, SEM and VSM. The average lattice parameter showed dependence on x, whereas the crystallite and grain size and strain did not. The infrared spectra showed six absorption bands in the range of 200–1000 cm{sup −1}. They were assigned to the corresponding metallic ion–oxygen bonds among the A- and B-sites. The absorption bands ν{sub 1} and ν{sub 2} and their intensities and force constants F{sub 1} and F{sub 2} were increased against x. Using the transmitted and absorbed energy, the IR velocity and refractive index and jump rate of vacancies were determined and discussed as functions of x. The trend of sauration magnetization Ms was decreased with x, whereas that of coercivity and anisotropy constant was increased. The determined Debye temperature and stiffness constant of the samples were discussed as functions of x. The absorption bands ν{sub 1} and ν{sub 2} proved dependence on the distance between magnetic ions (hopping length) L{sub A-A} and L{sub B-B} at the A- and B-sites, respectively, whereas F{sub 1} and F{sub 2} proved dependence on Ms. - Highlights: • Trend of Ms showed decrease with x, whereas that of Hc and K showed increase. • IR velocity and refractive index and jump rate of vacancies revealed dependence on x. • Debye temperature and stiffness constant showed increase with the additional factor x. • IR bands ν{sub 1} and ν{sub 2} were decreased with the distance between magnetic ions L{sub A} and L{sub B}. • Force constants F{sub 1} and F{sub 2} were affected by the saturation magnetization Ms.

Photoluminescence and optical absorption spectra of {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} mixed crystals

Energy Technology Data Exchange (ETDEWEB)

Kranjcec, M. [Department of Geotechnics, University of Zagreb, 7 Hallerova Aleja, Varazdin, 42000 (Croatia); Ruder Boskovic Institute, 54 Bijenicka Cesta, Zagreb, 10000 (Croatia); Studenyak, I.P. [Uzhhorod National University, 46 Pidhirna Str., Uzhhorod, 88000 (Ukraine); Azhniuk, Yu. M. [Institute of Electron Physics, Ukr. Nat. Acad. Sci., 21 Universytetska Str., Uzhhorod, 88000 (Ukraine)

2005-08-01

Temperature and compositional studies of photoluminescence and optical absorption edge spectra of {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} mixed crystals with x=0.1-0.4 are performed. Exciton and impurity-related photoluminescence bands are revealed at low temperatures and Urbach shape of the absorption edge is observed in the temperature range 77-300 K. Temperature and compositional dependences of the photoluminescence band spectral positions and halfwidths as well as optical pseudogap and absorption edge energy width are investigated. Mechanisms of radiative recombination and optical absorption as well as crystal lattice disordering processes in {gamma}{sub 1}-(Ga{sub x}In{sub 1-x}){sub 2}Se{sub 3} solid solutions are studied. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Lifetime-broadening-suppressed X-ray absorption spectrum of β-YbAlB4 deduced from Yb 3d → 2p resonant X-ray emission spectroscopy

International Nuclear Information System (INIS)

Kawamura, Naomi; Mizumaki, Masaichiro; Kanai, Noriko; Hayashi, Hisashi; Matsuda, Yasuhiro H.; Kuga, Kentaro; Nakatsuji, Satoru; Watanabe, Shinji

2017-01-01

In this work, the Yb 3d → 2p (Yb Lα 1,2 ) resonant X-ray emission spectrum of β-YbAlB 4 was acquired using excitation energies around the Yb L 3 -edge, at 2 K. Subsequently, the lifetime-broadening-suppressed (LBS) X-ray absorption structure (XAS) spectrum was obtained using the SIM-RIXS program. This spectrum was found to exhibit clearly resolved pre-edge and shoulder structures. Resonant Lα 1 emission spectra were well reproduced from LBS-XAS profiles over wide ranges of excitation and emission energies. In contrast, noticeable discrepancies appeared between the experimental and simulated Lα 2 emission spectra, suggesting an effect resulting from M 4 M 5 O 1 Coster-Kronig transitions. LBS-XAS, in conjunction with partial fluorescence yield (PFY) XAS and transmission XAS, determined a value for the Yb valence (v) in β-YbAlB 4 of 2.76 ± 0.08 at 2 K. Despite this relatively large uncertainty in v, each method provided a consistent variation in valence (δv) as the temperature was raised from 2 to 280 K: 0.060 ± 0.004 (LBS-XAS), 0.061 ± 0.005 (PFY-XAS) and 0.058 ± 0.007 (transmission XAS). The smaller δv associated with LBS-XAS demonstrates the greater precision of this method. (author)

The electronic structure of Ga As1-xPx and Ga Sb1-xPx calculated using the recursion method

International Nuclear Information System (INIS)

El-Hasan, M.; Tomak, M.

1988-10-01

The electronic structure calculation of Ga As 1-x P x and Ga Sb 1-x P x alloys using the recursion method is reported. A five orbitals, sp 3 s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states are calculated for Ga, As, Sb and P-sites, in a cluster of 216 atoms, the results are reasonably in good agreement with previous calculations. (author). 12 refs, 8 figs, 1 tab

Thermodynamic calculation and an experimental study of the combustion synthesis of (Mo{sub 1−x}Nb{sub x})Si{sub 2} (0 ⩽ x ⩽ 1)

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaohong, E-mail: matinbow@163.com; Lu, Qiong; Wu, Guangzhi; Shi, Jialing; Sun, Zhi

2015-08-25

Highlights: • (Mo{sub 1−x}Nb{sub x})Si{sub 2} alloys were synthesized by a simple and energy-saving process of SHS. • Theoretical adiabatic temperature of (Mo{sub 1−x}Nb{sub x})Si{sub 2} was calculated for the first time. • The variation of the actual temperature is consistent with theoretical temperature. - Abstract: The theoretical adiabatic temperature of (Mo{sub 1−x}Nb{sub x})Si{sub 2} (0 ⩽ x ⩽ 1) is calculated. The results indicate that the theoretical adiabatic temperature of (Mo{sub 1−x}Nb{sub x})Si{sub 2} increases with an increasing Nb content when (Mo{sub 1−x}Nb{sub x})Si{sub 2} is of a single-phase structure, but decreases with an increasing Nb content when (Mo{sub 1−x}Nb{sub x})Si{sub 2} is of a double-phase structure. All of the temperatures are higher than 1800 K, indicating that (Mo{sub 1−x}Nb{sub x})Si{sub 2} (0 ⩽ x ⩽ 1) can be prepared by the combustion synthesis method. In this work, (Mo{sub 1−x}Nb{sub x})Si{sub 2} (0 ⩽ x ⩽ 1) alloys are successfully synthesized by the combustion synthesis process from elemental powders of Mo, Nb, and Si. The highest combustion temperature and combustion product structure are studied. The results confirm that the variation of the experimental maximum combustion temperature of (Mo{sub 1−x}Nb{sub x})Si{sub 2} is consistent with that of the theoretical adiabatic temperature. The combustion products are non-equilibrium species, and a supersaturated solid solution of C11{sub b} type (Mo{sub 1−x}Nb{sub x})Si{sub 2} forms during combustion synthesis.

P2X1 Receptor Antagonists Inhibit HIV-1 Fusion by Blocking Virus-Coreceptor Interactions.

Science.gov (United States)

Giroud, Charline; Marin, Mariana; Hammonds, Jason; Spearman, Paul; Melikyan, Gregory B

2015-09-01

HIV-1 Env glycoprotein-mediated fusion is initiated upon sequential binding of Env to CD4 and the coreceptor CXCR4 or CCR5. Whereas these interactions are thought to be necessary and sufficient to promote HIV-1 fusion, other host factors can modulate this process. Previous studies reported potent inhibition of HIV-1 fusion by selective P2X1 receptor antagonists, including NF279, and suggested that these receptors play a role in HIV-1 entry. Here we investigated the mechanism of antiviral activity of NF279 and found that this compound does not inhibit HIV-1 fusion by preventing the activation of P2X1 channels but effectively blocks the binding of the virus to CXCR4 or CCR5. The notion of an off-target effect of NF279 on HIV-1 fusion is supported by the lack of detectable expression of P2X1 receptors in cells used in fusion experiments and by the fact that the addition of ATP or the enzymatic depletion of ATP in culture medium does not modulate viral fusion. Importantly, NF279 fails to inhibit HIV-1 fusion with cell lines and primary macrophages when added at an intermediate stage downstream of Env-CD4-coreceptor engagement. Conversely, in the presence of NF279, HIV-1 fusion is arrested downstream of CD4 binding but prior to coreceptor engagement. NF279 also antagonizes the signaling function of CCR5, CXCR4, and another chemokine receptor, as evidenced by the suppression of calcium responses elicited by specific ligands and by recombinant gp120. Collectively, our results demonstrate that NF279 is a dual HIV-1 coreceptor inhibitor that interferes with the functional engagement of CCR5 and CXCR4 by Env. Inhibition of P2X receptor activity suppresses HIV-1 fusion and replication, suggesting that P2X signaling is involved in HIV-1 entry. However, mechanistic experiments conducted in this study imply that P2X1 receptor is not expressed in target cells or involved in viral fusion. Instead, we found that inhibition of HIV-1 fusion by a specific P2X1 receptor antagonist, NF

Balloon observation of the binary X-ray source Her X-1 1.24 sec pulsation and cyclotron line emission

International Nuclear Information System (INIS)

Pietsch, W.; Reppin, C.; Truemper, J.; Voges, W.; Kendziorra, E.; Staubert, R.; Tuebingen Univ.

1978-01-01

During a balloon observation from Palestine, Texas, the authors detected for the first time the 1.24 sec pulsation of Hercules X-1 in the hard X-ray range up to 70 keV and discovered strong line emission in its spectrum at 58 keV. They estimated a line flux of 3x10 -3 photons cm -2 sec -1 and a line width of less than 12 keV. The phenomenon is interpreted as electron cyclotron emission at the basic frequency emitted by the hot polar plasma of the rotating neutron star. The line measured leads to a magnetic field strength of 5.3x10 12 gauss. In further observations during a balloon campaign in Sept./Oct. 1977 the authors confirmed the existence of the line emission and for the first time found pulsed X-ray emission above 15 keV during the 'short on' - and 'off'-state of the Her X-1 35 day cycle. The pulse to interpulse ratio seems to vary with the 35 day phase

Crystal structure study of dielectric oxynitride perovskites La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2)

Energy Technology Data Exchange (ETDEWEB)

Habu, Daiki; Masubuchi, Yuji [Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan); Torii, Shuki [Institute of Materials Structure Science, High Energy Accelerator Organization, 203-1, Shirakata, Tokai-Mura, Naka-gun, Ibaraki 319-1106 (Japan); Kamiyama, Takashi [Institute of Materials Structure Science, High Energy Accelerator Organization, 203-1, Shirakata, Tokai-Mura, Naka-gun, Ibaraki 319-1106 (Japan); School of High Energy Accelerator Science, Sokendai (The Graduate University for Advanced Studies), Tokai 319-1106 (Japan); Kikkawa, Shinichi, E-mail: kikkawa@eng.hokudai.ac.jp [Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628 (Japan)

2016-05-15

As is the case with SrTaO{sub 2}N, both cis-ordering of nitride anions and octahedral titling are also preferable in La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2) oxynitride perovskites. A larger dielectric constant of ε{sub r}≈5.0×10{sup 3} was estimated for the pure oxynitride with x=0.2, compared with ε{sub r}≈750 for the product with x=0, by extrapolating the ε{sub r} values obtained from powders mixed with paraffin at various mixing ratios. The crystal structure of x=0.2 with larger tolerance factor than x=0 increased the octahedral tilting, which contributes to the increased dielectric constant. The increased dielectric constant supports the exchange mechanism for the dielectric property between two kinds of –Ti–N– helical coils (clockwise and anticlockwise) derived from the above cis-ordering of nitride anions. - Graphical abstract: Very large dielectric constant values were estimated for La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x}; ε{sub r}≈5.0×10{sup 3} in x=0.2 and ε{sub r}≈750 in x=0. - Highlights: • Cis-configuration of nitride anions was confirmed in La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2). • Dielectric constant values were estimated to be 750 for x=0 and 5.0×10{sup 3} for x=0.2, respectively. • The large dielectric property is to the exchange mechanism between clockwise and anticlockwise –Ti–N– coil motifs.

Electronic state of cerium-based catalysts studied by spectroscopic methods (XPS, XAS)

International Nuclear Information System (INIS)

Le Normand, F.; Bernhardt, P.; Hilaire, L.; Kili, K.; Maire, G.; Krill, G.

1987-01-01

X-ray Photoelectron Spectroscopy (XPS) of the 3d core level of cerium and X-ray Absorption Spectroscopy (XAS) of the L III absorption edge of cerium have been used to study Pd/CeO 2 , Pd-Ce/γAl 2 O 3 and Ce/γAl 2 O 3 catalysts. The oxidation state of cerium was found to decrease with decreasing amounts of cerium on the surface. It was quite close to III for very low contents of cerium (2-3%). For higher cerium contents the oxidation state was nearer to IV but differences between the two methods were found, owing to the fact that XAS is a volume sensitive probe. The oxidation state of cerium was also lower for Pd-Ce/γAl 2 O 3 than for Ce/γAl 2 O 3 , suggesting the formation of Ce III OCl, chlorine coming from the precursor salt of palladium. 15 refs.; 5 figs.; 1 table