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Sample records for impurity concentration sn

  1. Anomalous temperature behavior of Sn impurities

    International Nuclear Information System (INIS)

    Haskel, D.; Shechter, H.; Stern, E.A.; Newville, M.; Yacoby, Y.

    1993-01-01

    Sn impurities in Pb and Ag hosts have been investigated by Moessbauer effect and in Pb by x-ray-absorption fine-structure (XAFS) studies. The Sn atoms are dissolved up to at least 2 at. % in Pb and up to at least 8 at. % in Ag for the temperature ranges investigated. The concentration limit for Sn-Sn interactions is 1 at. % for Pb and 2 at. % for Ag as determined experimentally by lowering the Sn concentration until no appreciable change occurs in the Moessbauer effect. XAFS measurements verify that the Sn impurities in Pb are dissolved and predominantly at substitutional sites. For both hosts the temperature dependence of the spectral intensities of isolated Sn impurities below a temperature T 0 is as expected for vibrating about a lattice site. Above T 0 the Moessbauer spectral intensity exhibits a greatly increased rate of drop-off with temperature without appreciable broadening. This drop-off is too steep to be explained by ordinary anharmonic effects and can be explained by a liquidlike rapid hopping of the Sn, localized about a lattice site. Higher-entropy-density regions of radii somewhat more than an atomic spacing surround such impurities, and can act as nucleation sites for three-dimensional melting

  2. Effect of impurities in niobium on the growth of superconducting Nb/sub 3//Sn. [Al, Cu, Ge, Si, Sn, Zr impurities

    Energy Technology Data Exchange (ETDEWEB)

    Sekizawa, T

    1974-01-01

    In order to examine the possibility of reducing the heat treatment temperature in the manufacturing process of the superconducting intermetallic compounds wire or ribbon by the metallurgical bond method, tin cored specimens of niobium including a small amount of impurity (Al, Cu, Ge, Si, Sn and Zr) have been prepared, and the critical currents measured as a function of the heat treatment temperature and time. Experimental results are summarized as follows. (1) The effect of the impurity added into niobium is to stabilize the dislocation network cell structure in niobium, caused by the cold working, up to the forming temperature of Nb/sub 3/Sn. The stabilized dislocation network structure is considered to serve as diffusion pipes of the tin atom. As this diffusion (microscopic) is predominant over bulk diffusion (macroscopic), the cored specimen made of niobium including impurities has lower forming temperature of Nb/sub 3/Sn compared with the specimen made of pure niobium. (2) The critical current vs. heat treatment temperature characteristics show that the critical current peaks at 900/sup 0/C in the case of niobium including Si, while at 950/sup 0/C in the case of pure niobium. 6 references.

  3. FP-LAPW Calculations of the EFG at Cd Impurities in Rutile SnO2

    International Nuclear Information System (INIS)

    Errico, L. A.; Fabricius, G.; Renteria, M.

    2001-01-01

    We report an ab initio study of the electric-field gradient (EFG) at Cd impurities located at the cation site in the semiconductor SnO 2 (rutile phase). The study was performed with the WIEN97 implementation of the FP-LAPW method. In order to simulate the diluted Cd-impurity in the SnO 2 host and to calculate the electronic structure of the system we used a 72-atoms super-cell, studying the relaxation introduced by the impurity in the lattice. The free-relaxation process performed shows that the relaxations of the oxygen nearest-neighbors of the impurity are not isotropic. Our prediction for the EFG tensor are compared with experimental results and point-charge model predictions

  4. FP-LAPW Calculations of the EFG at Cd Impurities in Rutile SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Errico, L. A.; Fabricius, G.; Renteria, M. [Universidad Nacional de La Plata, Instituto de Fisica La Plata (IFLP-CONICET) - Departamento de Fisica, Facultad de Ciencias Exactas (Argentina)

    2001-11-15

    We report an ab initio study of the electric-field gradient (EFG) at Cd impurities located at the cation site in the semiconductor SnO{sub 2}(rutile phase). The study was performed with the WIEN97 implementation of the FP-LAPW method. In order to simulate the diluted Cd-impurity in the SnO{sub 2} host and to calculate the electronic structure of the system we used a 72-atoms super-cell, studying the relaxation introduced by the impurity in the lattice. The free-relaxation process performed shows that the relaxations of the oxygen nearest-neighbors of the impurity are not isotropic. Our prediction for the EFG tensor are compared with experimental results and point-charge model predictions.

  5. Fabrication and sulfurization of Cu{sub 2}SnS{sub 3} thin films with tuning the concentration of Cu-Sn-S precursor ink

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chi-Jie [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China); Shei, Shih-Chang, E-mail: scshei@mail.nutn.edu.tw [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shih-Chang [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China)

    2016-12-01

    Highlights: • Tuning the relative reaction rate of component phases proved to be beneficial in controlling the reaction process. • Low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology. • Optical band-gap energy measured at 1.346 eV suitable for thin-film solar cell applications. - Abstract: In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu{sub 2}S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu{sub 4}SnS{sub 4}. Following sulfurization, single phase Cu{sub 2}SnS{sub 3} (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu{sub 2}S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu{sub 2}S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu{sub 2}S and Cu{sub 4}SnS{sub 4}. Raman spectra revealed that second phase Cu{sub 2}S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology and an atomic composition ratio of Cu:Sn:S = 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole

  6. Role of Sn impurity on electronic topological transitions in 122 Fe-based superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Haranath, E-mail: hng@rrcat.gov.in [Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sen, Smritijit [Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2016-08-25

    We show that only a few percentage of Sn doping at the Ba site on BaFe{sub 2}As{sub 2}, can cause electronic topological transition, namely, the Lifshitz transition. A hole like d{sub xy} band of Fe undergoes electron like transition due to 4% Sn doping. Lifshitz transition is found in BaFe{sub 2}As{sub 2} system around all the high symmetry points. Our detailed first principles simulation predicts absence of any Lifshitz transition in other 122 family compounds like SrFe{sub 2}As{sub 2}, CaFe{sub 2}As{sub 2} in agreement with experimental observations. This work bears practical significance due to the facts that a few percentage of Sn impurity is in-built in tin-flux grown single crystals method of synthesizing 122 materials and inter-relationship among the Lifshitz transition, magnetism and superconductivity. - Highlights: • Electronic topological transition due to Sn contamination in BaFe{sub 2}As{sub 2}. • Hole like Fe-d{sub xy} band converts into electron like in 3% Sn contaminated BaFe{sub 2}As{sub 2}. • Electron like Fe-d{sub xz}, d{sub yz} bands moves above Fermi Level at X,Y points. • No Lifshitz transition found in Sn-contaminated Sr-122, Ca-122 systems.

  7. Long-range ferromagnetic order induced by a donor impurity band exchange in SnO{sub 2}:Er{sup 3+} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Aragón, F. H.; Coaquira, J. A. H. [Núcleo de Física Aplicada, Institute of Physics, University of Brasília, Brasília DF 70910-900 (Brazil); Chitta, V. A. [Instituto de Física, Universidade de São Paulo, São Paulo, SP 05508-000 (Brazil); Hidalgo, P. [Faculdade Gama-FGA, Sector Central Gama, Universidade de Brasília, Brasília, DF72405-610 (Brazil); Brito, H. F. [Instituto de Química, Universidade de São Paulo, São Paulo, SP 05508-000 (Brazil)

    2013-11-28

    In this work, the structural and magnetic properties of Er-doped SnO{sub 2} (SnO{sub 2}:Er) nanoparticles are reported. The SnO{sub 2}:Er nanoparticles have been synthesized by a polymer precursor method with Er content from 1.0% to 10.0%. X-ray diffraction results indicate the formation of only the rutile-type structure in all samples. The estimated mean crystallite size shows a decrease from ∼10 to ∼4 nm when the Er content is increased from 1.0% to 10.0%. The particle size values have been corroborated by transmission electron microscopy technique. The thermal dependence of the magnetization is consistent with the 3+ oxidation state of erbium ions for all samples. A strong paramagnetic-like behavior coexisting with a ferromagnetic phase has been determined for samples with Er content below 5.0%. Above this concentration, only a paramagnetic behavior has been determined. Isothermal magnetization curves are consistent with the occurrence of long-range ferromagnetic order mediated by donor electrons forming bound magnetic polarons which overlap to produce a spin-split impurity band.

  8. Impurity concentration limits and activation in fusion reactor structural materials

    International Nuclear Information System (INIS)

    Zucchetti, M.

    1991-01-01

    This paper examines waste management problems related to impurity activation in first-wall, shield, and magnet materials for fusion reactors. Definitions of low activity based on hands-on recycling, remote recycling, and shallow land burial waste management criteria are discussed. Estimates of the impurity concentration in low-activation materials (elementally substituted stainless steels and vanadium alloys) are reported. Impurity activation in first-wall materials turns out to be critical after a comparison of impurity concentration limits and estimated levels. Activation of magnet materials is then considered: Long-term activity is not a concern, while short-term activity is. In both cases, impurity activation is negligible. Magnet materials, and all other less flux-exposed materials, have no practical limitation on impurities in terms of induced radioactivity

  9. First principles investigation of interaction between impurity atom (Si, Ge, Sn) and carbon atom in diamond-like carbon system

    International Nuclear Information System (INIS)

    Li, Xiaowei; Wang, Aiying; Lee, Kwang-Ryeol

    2012-01-01

    The interaction between impurity atom (Si, Ge, and Sn) and carbon atom in diamond-like carbon (DLC) system was investigated by the first principles simulation method based on the density functional theory. The tetrahedral configuration was selected as the calculation model for simplicity. When the bond angle varied in a range of 90°–130° from the equivalent state of 109.471°, the distortion energy and the electronic structures including charge density of the highest occupied molecular orbital (HOMO) and partial density of state (PDOS) in the different systems were calculated. The results showed that the addition of Si, Ge and Sn atom into amorphous carbon matrix significantly decreased the distortion energy of the system as the bond angles deviated from the equilibrium one. Further studies of the HOMO and PDOS indicated that the weak covalent bond between Si(Ge, Sn) and C atoms was formed with the decreased strength and directionality, which were influenced by the electronegative difference. These results implied that the electron transfer behavior at the junction of carbon nano-devices could be tailored by the impurity element, and the compressive stress in DLC films could be reduced by the incorporation of Si, Ge and Sn because of the formation of weaker covalent bonds. - Highlights: ►Distortion energy after bond angle distortion was decreased comparing with C-C unit. ►The weak covalent bond was formed between impurity atoms and corner carbon atoms. ►Observed electron transfer behavior affected the strength and directionality of bond. ►Reduction of strength and directionality of bond contributed to small energy change.

  10. Impurity contamination effects on the interaction of Li and Sn Films on W (poly)

    Science.gov (United States)

    Fasoranti, Oluseyi; Koel, Bruce

    2016-10-01

    Plasma-solid interactions under fusion divertor conditions lead to continuous material erosion and may result in performance degradation of the plasma-facing components. Liquid metals such as Li and Sn may help to circumvent this issue due to their ability for self-recovery and heat-flux management. This has driven interest in understanding plasma-liquid metal interactions. We have shown in our lab that surface science experiments can examine discrete aspects of plasma-surface interactions by enabling clean and controlled deposition of metal films. We will review our recent results on the thermal stability of ultrathin Li and Sn films on a polycrystalline W surface using surface diagnostic methods such as Temperature Programmed Desorption, Auger Electron Spectroscopy, and Ion Scattering Spectroscopy. These studies examine Li-W and Sn-W interfaces and investigate the impact of impurities. We will discuss relevant issues such as the differences in oxygen uptake between solid and liquid lithium films and the effects of post-oxidation, as well as pre-adsorbed surface oxygen and carbon, on the thermal stability of these films. We plan to present additional studies of deuterium ion uptake and retention on Li and Sn films. Support was provided through U.S. Department of Energy, Office of Science/Fusion Energy Sciences under Award Number DE-SC0012890.

  11. The role of Co impurities and oxygen vacancies in the ferromagnetism of Co-doped SnO2: GGA and GGA+U studies

    International Nuclear Information System (INIS)

    Wang Hongxia; Yan Yu; Mohammed, Y. Sh.; Du Xiaobo; Li Kai; Jin Hanmin

    2009-01-01

    The electronic structure and ferromagnetic stability of Co-doped SnO 2 are studied using the first-principle density functional method within the generalized gradient approximation (GGA) and GGA+U schemes. The addition of effective U Co transforms the ground state of Co-doped SnO 2 to insulating from half-metallic and the coupling between the nearest neighbor Co spins to weak antimagnetic from strong ferromagnetic. GGA+U Co calculations show that the pure substitutional Co defects in SnO 2 cannot induce the ferromagnetism. Oxygen vacancies tend to locate near Co atoms. Their presence increases the magnetic moment of Co and induces the ferromagnetic coupling between two Co spins with large Co-Co distance. The calculated density of state and spin density distribution calculated by GGA+U Co show that the long-range ferromagnetic coupling between two Co spins is mediated by spin-split impurity band induced by oxygen vacancies. More charge transfer from impurity to Co-3d states and larger spin split of Co-3d and impurity states induced by the addition of U Co enhance the ferromagnetic stability of the system with oxygen vacancies. By applying a Coulomb U O on O 2 s orbital, the band gap is corrected for all calculations and the conclusions derived from GGA+U Co calculations are not changed by the correction of band gap.

  12. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

    International Nuclear Information System (INIS)

    Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-01-01

    A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10 14  cm −3 . Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E F ) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E F . Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed

  13. Non-stoichiometry and properties of SnTe left angle Cd right angle semiconducting phase of variable composition

    International Nuclear Information System (INIS)

    Rogacheva, E.I.; Nashchekina, O.N.

    2006-01-01

    It was established that the dependences of microhardness, hole concentration, electrical conductivity, and the Seebeck coefficient on composition in the Sn 0.984 Te-Cd and Sn 0.984 Te-CdTe solid solutions based on non-stoichiometric tin telluride exhibit non-monotonic behavior. The effects connected with the interaction between intrinsic and impurity defects and with critical phenomena accompanying a transition to the impurity continuum were isolated. The results obtained in this work represent another evidence for our proposition about the universal character of critical phenomena accompanying the transition from an impurity discontinuum to an impurity continuum in solid solutions. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  14. On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

    Energy Technology Data Exchange (ETDEWEB)

    Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, is obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.

  15. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    Energy Technology Data Exchange (ETDEWEB)

    Kushwaha, S. K., E-mail: kushwaha@princeton.edu; Gibson, Q. D.; Cava, R. J. [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States); Xiong, J.; Ong, N. P. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Pletikosic, I. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States); Weber, A. P. [National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973 (United States); Fedorov, A. V. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Valla, T. [Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States)

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  16. Magnetic exchange interactions in Mn doped ZnSnAs{sub 2} chalcopyrite

    Energy Technology Data Exchange (ETDEWEB)

    Bouhani-Benziane, H.; Sahnoun, O. [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Sahnoun, M., E-mail: sahnoun_cum@yahoo.fr [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Department of Chemistry, University of Fribourg (Switzerland); Driz, M. [Laboratoire de Sciences des Matériaux (LSM), University of Sidi Bel Abbes (Algeria); Daul, C. [Department of Chemistry, University of Fribourg (Switzerland)

    2015-12-15

    Accurate ab initio full-potential augmented plane wave (FP-LAPW) electronic calculations within generalized gradient approximation have been performed for Mn doped ZnSnAs{sub 2} chalcopyrites, focusing on their electronic and magnetic properties as a function of the geometry related to low Mn-impurity concentration and the spin magnetic alignment (i.e., ferromagnetic vs antiferromagnetic). As expected, Mn is found to be a source of holes and localized magnetic moments of about 4 µ{sub B} per Mn atom are calculated which are sufficiently large. The defect calculations are firstly performed by replacing a single cation (namely Zn and Sn) with a single Mn atom in the pure chalcopyrite ZnSnAs{sub 2} supercell, and their corresponding formation energies show that the substitution of a Sn atom (rather than Zn) by Mn is strongly favored. Thereafter, a comparison of total energy differences between ferromagnetic (FM) and antiferromagnetic (AFM) are given. Surprisingly, the exchange interaction between a Mn pairs is found to oscillate with the distance between them. Consequently, the AFM alignment is energetically favored in Mn-doped ZnSnAs{sub 2} compounds, except for low impurity concentration associated with lower distances between neighboring Mn impurities, in this case the stabilization of FM increases. Moreover, the ferromagnetic alignment in the Mn-doped ZnSnAs{sub 2} systems behaves half-metallic; the valence band for majority spin orientation is partially filled while there is a gap in the density of states for the minority spin orientation. This semiconducting gap of ~1 eV opened up in the minority channel and is due to the large bonding–antibonding splitting from the p–d hybridization. Our findings suggest that the Mn-doped ZnSnAs{sub 2} chalcopyrites could be a different class of ferromagnetic semiconductors. - Highlights: • ab initio calculations were performed on Mn doped ZnSnAs{sub 2} chalcopyrite. • Substitution of a Sn atom (rather than Zn) by Mn

  17. The assessment of the impurities concentration into CANDU steam generator crevices

    International Nuclear Information System (INIS)

    Lucan, D.; Fulger, M.; Florea, S.; Jinescu, Ghe.; Woinaroschy, Al.

    2001-01-01

    Crevice corrosion involves a number of simultaneous and interacting operations, including mass transfer processes, production of metal ions within the crevice and hydrolysis reactions, resulting in a very aggressive solution from the point of view of corrosion. These intermediary corrosion processes are in a complex interdependence and they imply a number of important parameters, including both the crevice gap and depth. The major goal of this paper was development of a mathematical model for the calculation of the concentrations of impurities (Na + , Cl - , Fe 2+ ) into crevices and experimental research related to this process. There were identified the important experimental parameters that require further experimental research. This model considers all the processes that interfere in the impurities concentration mechanism achieved into the crevice but it also makes some assumptions for the easy solving of mathematical equations. Because the measurement of the impurities concentration into the steam generator and/or deposition in the crevices solutions is not achievable, one cannot estimate the corrosion intensity inside these locations. The mathematical model presented in this paper may predict the impurities concentration in the crevices. Based on the results obtained in the study of corrosion one can appreciate the corrosion intensity in the materials with crevices or conceive an experimental program, which could lead to results. The predictive quality of the model may contribute to the choice of new design solutions, development of new alloys and criteria of material selection. (authors)

  18. Quantitative spectrographic analysis of impurities in antimonium

    International Nuclear Information System (INIS)

    Brito, J. de; Gomes, R.P.

    1978-01-01

    An emission spectrographic method is describe for the determination of Ag, Al, As, Be, Bi, Cd, Cr, Cu, Ga, Ni, Pb, Sn, Si, and Zn in high purity antimony metal. The metal sample ia dissolved in nitric acid(1:1) and converted tp oxide by calcination at 900 0 C for one hour. The oxide so obtained is mixed with graphite, which is used as a spectroscopic buffer, and excited by a direct current arc. Many parameters are studied optimum conditions are selected for the determination of the impurities mentioned. The spectrum is photographed in the second order of a 15.000 lines per inch grating and the most sensitive lines for the elements are selected. The impurities are determined in the concentration range of 1 - 0,01% with a precision of approximately 10% [pt

  19. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Energy Technology Data Exchange (ETDEWEB)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, Albany, New York 12203 (United States); Kim, Yihwan; Huang, Yi-Chiau [Applied Materials, Sunnyvale, California 94085 (United States); Reznicek, Alexander [IBM Research at Albany Nanotech, Albany, New York 12203 (United States)

    2016-03-07

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl{sub 4} precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  20. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander

    2016-01-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl 4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  1. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Science.gov (United States)

    Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

    2016-03-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  2. Quenching of orbital momentum by crystalline fields in a multichannel Kondo impurity

    International Nuclear Information System (INIS)

    Schlottmann, P.; Lee, K.

    1995-01-01

    We consider an impurity of spin S interacting via an isotropic spin exchange with conduction electrons of spin 1/2. The conduction electrons can be in n different orbital channels. We assume that crystalline fields split the orbital degrees of freedom into two multiplets, the one with lower energy consisting of n * orbitals and the one of higher energy of n-n * orbitals. The exchange coupling is the same for all channels. We derive the thermodynamic Bethe ansatz equations for this model and discuss the ground-state properties of the impurity as a function of the spin S and the magnetic field. The solution of the ground-state Bethe ansatz equations is obtained numerically. Three situations have to be distinguished when the magnetic field is small compared to the Kondo temperature: (i) If S=n/2 or S=n * /2 the conduction electrons exactly compensate the impurity spin into a singlet ground state, (ii) if S>n/2 the impurity is undercompensated, i.e., only partially compensated leaving an effective spin S-n/2 at low temperatures, and (iii) in all other cases the impurity spin is overcompensated giving rise to critical behavior. The quenching of the orbits by the crystalline field dramatically affects the cases S * /2

  3. Fast neutron-induced changes in net impurity concentration of high-resistivity silicon

    International Nuclear Information System (INIS)

    Tsveybak, I.; Bugg, W.; Harvey, J.A.; Walter, J.

    1992-01-01

    Resistivity changes produced by 1 MeV neutron irradiation at room temperature have been measured in float-zone grown n and p-type silicon with initial resistivities ranging from 1.8 to 100 kΩcm. Observed changes are discussed in terms of net electrically active impurity concentration. A model is presented which postulates escape of Si self-interstitials and vacancies from damage clusters and their subsequent interaction with impurities and other pre-existing defects in the lattice. These interactions lead to transfer of B and P from electrically active substitutional configurations into electrically inactive positions (B i , Pi i , and E-center), resulting in changes of net electrically active impurity concentration. The changes in spatial distribution of resistivity are discussed, and the experimental data are fit by theoretical curves. Differences in the behavior of n-type and p-type material are explained on the basis of a faster removal of substitutional P and a more nonuniform spatial distribution of the original P concentration

  4. Changes of electronic structure of SnTe due to high concentration of Sn vacancies

    International Nuclear Information System (INIS)

    Masek, J.; Nuzhnyj, D.N.

    1997-01-01

    Non-stoichiometric Sn 1-y Te is a strongly degenerated n-type semiconductor. This is important for understanding unusual features of magnetic behaviour of Sn 1-x Gd x Te where the relative positions of the Fermi energy and the atomic d-level of Gd govern the exchange coupling.The influence of the Sn vacancies on the band structure cannot be neglect if their concentration reaches a few atomic percent. We address this problem by using a tight-binding coherent potential approach and show that although the character of the bands remains unchanged, they are modified so that ε d can come out above the heavy-hole band. (author)

  5. TDPAC study of Cd-doped SnO

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, E. L., E-mail: munoz@fisica.unlp.edu.ar [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina); Carbonari, A. W. [Instituto de Pesquisas Energeticas y Nucleares-IPEN-CNEN/SP (Brazil); Errico, L. A. [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina); Bibiloni, A. G. [Universidad Nacional de La Plata, Departamento de Fisica, Facultad de Ciencias Exactas (Argentina); Petrilli, H. M. [Universidade de Sao Paulo, Instituto de Fisica (Brazil); Renteria, M. [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina)

    2007-07-15

    The combination of hyperfine techniques and ab initio calculations has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids. A recent example has been the study of Cd-doped SnO, where ab initio calculations questioned previous TDPAC assignments of the electric-field gradient (EFG) in {sup 111}In-implanted Sn-O thin films. Here we present new TDPAC experiments at {sup 111}In-diffused polycrystalline SnO. A reversible temperature dependence of the EFG was observed in the range 295-900 K. The TDPAC results were compared with theoretical calculations performed with the full-potential linearized augmented plane wave (FP-LAPW) method, in the framework of the density functional theory. Through the comparison with the theoretical results, we infer that different electronic surroundings around Cd impurities can coexist in the SnO sample.

  6. TDPAC study of Cd-doped SnO

    International Nuclear Information System (INIS)

    Munoz, E. L.; Carbonari, A. W.; Errico, L. A.; Bibiloni, A. G.; Petrilli, H. M.; Renteria, M.

    2007-01-01

    The combination of hyperfine techniques and ab initio calculations has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids. A recent example has been the study of Cd-doped SnO, where ab initio calculations questioned previous TDPAC assignments of the electric-field gradient (EFG) in 111 In-implanted Sn-O thin films. Here we present new TDPAC experiments at 111 In-diffused polycrystalline SnO. A reversible temperature dependence of the EFG was observed in the range 295-900 K. The TDPAC results were compared with theoretical calculations performed with the full-potential linearized augmented plane wave (FP-LAPW) method, in the framework of the density functional theory. Through the comparison with the theoretical results, we infer that different electronic surroundings around Cd impurities can coexist in the SnO sample.

  7. Exploring d{sup 0} magnetism in doped SnO{sub 2}–a first principles DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, Brahmananda, E-mail: brahma@barc.gov.in; Ramaniah, Lavanya M.

    2015-07-01

    In search of d{sup 0} magnetism, the magnetic behavior of SnO{sub 2} with cation substitution from group1A (Li, Na, K) and group 2A (Be, Mg, Ca) elements has been systematically studied using Density Functional Theory (DFT). While an impurity from group 1A elements switches on ferromagnetism at a lower concentration itself, sufficient hole density is required for a group 2A impurity to create a spontaneous spin polarized ground state, a finding that has not been reported in earlier investigations. Our DFT results predict for the first time that impurities from group 2A (Mg, Ca) in SnO{sub 2} can promote room temperature ferromagnetism. Further, the emergence of ferromagnetism due to doping from group 1A elements, which injects three holes per defect, has been mapped successfully onto a modified Hubbard model from the literature. Doping of a single Na atom in the supercell (concentration 6.25 at%) makes the system ferromagnetic, with a magnetic moment close to 3.0 μ{sub B} per defect, and a Curie temperature of 815 K, obtained in the mean field approximation. This agrees closely with a model prediction of 750 K. Finally, the triggering of ferromagnetism by an impurity atom from group 2A, which adds two holes per defect in the system, implies that the prescription of three holes per defect given in the literature is not a necessary criterion for hole induced ferromagnetism. Rather, the analysis of the density of states and ferromagnetic coupling indicate that the system needs a critical hole concentration to activate ferromagnetism, by pushing the Fermi level inside the valence band in order to satisfy the Stoner criterion. - Graphical abstract: Spin density (Δρ=ρ↑−ρ↓) shown in yellow color mainly concentrated on the first shell O atoms around the impurity (a)Li, (b)Na, (c) K for isovalue 0.2e (d) K for isovalue 0.1. - Highlights: • Systematic study of d{sup 0} magnetism in SnO{sub 2} doped with group 1A (Li, Na, K) and group 2A (Be, Mg, Ca).

  8. First-principles calculations of impurity diffusion coefficients in dilute Mg alloys using the 8-frequency model

    International Nuclear Information System (INIS)

    Ganeshan, S.; Hector, L.G.; Liu, Z.-K.

    2011-01-01

    Research highlights: → Implemented the eight frequency model for impurity diffusion in hexagonal metals. → Model inputs were energetics/vibrational properties from first princples. → Predicted diffusion coefficients for Al, Ca, Zn and Sn impurity diffusion in Mg. → Successful prediction of partial correlation factors and jump frequencies. → Good agreement between calculated and experimental results. - Abstract: Diffusion in dilute Mg-X alloys, where X denotes Al, Zn, Sn and Ca impurities, was investigated with first-principles density functional theory in the local density approximation. Impurity diffusion coefficients were computed as a function of temperature using the 8-frequency model which provided the relevant impurity and solvent (Mg) jump frequencies and correlation factors. Minimum energy pathways for impurity diffusion and associated saddle point structures were computed with the climbing image nudged elastic band method. Vibrational properties were obtained with the supercell (direct) method for lattice dynamics. Calculated diffusion coefficients were compared with available experimental data. For diffusion between basal planes, we find D Mg-Ca > D Mg-Zn > D Mg-Sn > D Mg-Al, where D is the diffusion coefficient. For diffusion within a basal plane, the same trend holds except that D Mg-Zn overlaps with D Mg-Al at high temperatures and D Mg-Sn at low temperatures. These trends were explored with charge density contours in selected planes of each Mg-X alloy, the variation of the activation energy for diffusion with the atomic radius of each impurity and the electronic density of states. The theoretical methodology developed herein can be applied to impurity diffusion in other hexagonal materials.

  9. Influence of negative substrate bias voltage on the impurity concentrations in Zr films

    International Nuclear Information System (INIS)

    Lim, J.-W.; Bae, J.W.; Mimura, K.; Isshiki, M.

    2006-01-01

    Zr films were deposited on Si(1 0 0) substrates without a substrate bias voltage and with substrate bias voltages of -50 V and -100 V using a non-mass separated ion beam deposition system. Secondary ion mass spectrometry and glow discharge mass spectrometry were used to determine the impurity concentrations in a Zr target and Zr films. It was found that the total amount of impurities in the Zr film deposited at the substrate bias voltage of -50 V was much lower than that in the Zr film deposited without the substrate bias voltage. It means that applying a negative bias voltage to the substrate can suppress the increase in impurities of Zr films. Furthermore, it was confirmed that dominant impurity elements such as C, N and O have a considerable effect on the purity of Zr films and these impurities can be remarkably reduced by applying the negative substrate bias voltage

  10. Distribution of impurity states and charge transport in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yuanfeng; Makongo, Julien P.A. [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Page, Alexander [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Sahoo, Pranati [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Stokes, Kevin [The Advanced Materials Research Institute, Department of Physics, University of New Orleans, New Orleans, LA 70148 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

    2016-02-15

    Energy filtering of charge carriers in a semiconducting matrix using atomically coherent nanostructures can lead to a significant improvement of the thermoelectric figure of merit of the resulting composite. In this work, several half-Heusler/full-Heusler (HH/FH) nanocomposites with general compositions Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (0≤x≤0.15 and y=0.005, 0.01 and 0.025) were synthesized in order to investigate the behavior of extrinsic carriers at the HH/FH interfaces. Electronic transport data showed that energy filtering of carriers at the HH/FH interfaces in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} samples strongly depends on the doping level (y value) as well as the energy levels occupied by impurity states in the samples. For example, it was found that carrier filtering at HH/FH interfaces is negligible in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (y=0.01 and 0.025) composites where donor states originating from Sb dopant dominate electronic conduction. However, we observed a drastic decrease in the effective carrier density upon introduction of HH/FH interfaces for the mechanically alloyed Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 0.995}Sb{sub 0.005} samples where donor states from unintentional Fe impurities contribute the largest fraction of conduction electrons. This work demonstrates the ability to synergistically integrate the concepts of doping and energy filtering through nanostructuring for the optimization of electronic transport in semiconductors. - Graphical abstract: Electronic transport in semiconducting half-Heusler (HH) matrices containing full-Heusler (FH) nanoinclusions strongly depends on the energy distribution of impurity states within the HH matrix with respect to the magnitude of the potential energy barrier at the HH/FH interfaces. - Highlights: • Coherent nanostructures enhanced thermoelectric behavior of half-Heusler alloys. • Nanostructures act as energy filter of

  11. Effect of heat treatment and impurity concentration on some mechanical properties V-15Cr-5Ti alloy

    International Nuclear Information System (INIS)

    Loomis, B.A.; Kestel, B.J.; Diercks, D.R.

    1986-03-01

    The effects of heat treatment and O, N, C, Si, and S impurity level on the yield strength, ductility, and fracture mode for specimens from four different heats of the V-15Cr-5Ti alloy are presented. The heat treatments for the alloy consisted of annealing as-rolled material for one hour at either 950, 1050, 1125, or 1200 0 C. The total oxygen, nitrogen, and carbon impurity concentration ranged from 400 to 1200 wppm. The Si concentration ranged from 300 to 1050 wppm, and the S concentration ranged from 440 to 1100 wppm. The yield strength and ductility for the alloy, regardless of impurity concentration, exhibited minimum and maximum values, respectively, for the 1125 0 C anneal. The primary mode of failure for the tensile specimens was transgranular fracture

  12. The influence of impurity concentration and magnetic fields on the superconducting transition of high-purity titanium

    Energy Technology Data Exchange (ETDEWEB)

    Peruzzi, A.; Gottardi, E.; Peroni, I.; Ponti, G.; Ventura, G

    1999-08-01

    The influence of impurity concentration c and applied magnetic field H on the superconducting transition of high-purity commercial titanium samples was investigated. The superconductive transition temperature T{sub C} was found to be very sensitive to the impurity concentration (dT{sub C}/dc {approx} -0.6 mK/w.ppm) and to the applied magnetic field (dT{sub C}/dH {approx} -1.1 mK/G). A linear dependence of T{sub C} decrease on impurity concentration, as theoretically predicted by various authors, was observed. In the purest sample, a linear decrease of T{sub C} on the applied magnetic field was found. The run-to-run and sample-to-sample reproducibility of the transition of the same sample was evaluated, and its suitability as a thermometric reference point below 1 K was discussed.

  13. Radiated Power and Impurity Concentrations in the EXTRAP-T2R Reversed-Field Pinch

    Science.gov (United States)

    Corre, Y.; Rachlew, E.; Cecconello, M.; Gravestijn, R. M.; Hedqvist, A.; Pégourié, B.; Schunke, B.; Stancalie, V.

    2005-01-01

    A numerical and experimental study of the impurity concentration and radiation in the EXTRAP-T2R device is reported. The experimental setup consists of an 8-chord bolometer system providing the plasma radiated power and a vacuum-ultraviolet spectrometer providing information on the plasma impurity content. The plasma emissivity profile as measured by the bolometric system is peaked in the plasma centre. A one dimensional Onion Skin Collisional-Radiative model (OSCR) has been developed to compute the density and radiation distributions of the main impurities. The observed centrally peaked emissivity profile can be reproduced by OSCR simulations only if finite particle confinement time and charge-exchange processes between plasma impurities and neutral hydrogen are taken into account. The neutral hydrogen density profile is computed with a recycling code. Simulations show that recycling on metal first wall such as in EXTRAP-T2R (stainless steel vacuum vessel and molybdenum limiters) is compatible with a rather high neutral hydrogen density in the plasma centre. Assuming an impurity concentration of 10% for oxygen and 3% for carbon compared with the electron density, the OSCR calculation including lines and continuum emission reproduces about 60% of the total radiated power with a similarly centrally peaked emissivity profile. The centrally peaked emissivity profile is due to low ionisation stages and strongly radiating species in the plasma core, mainly O4+ (Be-like) and C3+ Li-like.

  14. Radiated Power and Impurity Concentrations in the EXTRAP-T2R Reversed-Field Pinch

    International Nuclear Information System (INIS)

    Corre, Y.; Rachlew, E.; Gravestijn, R.M.; Hedqvist, A.; Stancalie, V.

    2005-01-01

    A numerical and experimental study of the impurity concentration and radiation in the EXTRAP-T2R device is reported. The experimental setup consists of an 8-chord bolometer system providing the plasma radiated power and a vacuum ultraviolet spectrometer providing information on the plasma impurity content. The plasma emissivity profile as measured by the bolometric system is peaked in the plasma centre. A one dimensional Onion Skin Collisional-Radiative model (OSCR) has been developed to compute the density and radiation distributions of the main impurities. The observed centrally peaked emissivity profile can be reproduced by OSCR simulations only if finite particle confinement time and charge-exchange processes between plasma impurities and neutral hydrogen are taken into account. The neutral hydrogen density profile is computed with a recycling code. Simulations show that recycling on metal first wall such as in EXTRAP-T2R (stainless steel vacuum vessel and molybdenum limiters) is compatible with a rather high neutral hydrogen density in the plasma centre. Assuming an impurity concentration of 10% for oxygen and 3% for carbon compared with the electron density, the OSCR calculation including lines and continuum emission reproduces about 60% of the total radiated power with a similarly centrally peaked emissivity profile. The centrally peaked emissivity profile is due to low ionisation stages and strongly radiating species in the plasma core, mainly O 4+ (Be-like) and C 3+ (Li-like)

  15. Thermoelectric performance of co-doped SnTe with resonant levels

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Min; Han, Yemao; Li, Laifeng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd. Pasadena, California 91125 (United States); Wang, Heng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); Snyder, G. Jeffrey [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); TMO University, Saint Petersburg 197101 (Russian Federation)

    2016-07-25

    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n{sub H}) and extrinsic dopant concentration (N{sub I}, N{sub Ag}) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n{sub H}. Upon substituting extrinsic dopants beyond a certain amount, the n{sub H} changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

  16. Isotope effect of impurity diffusion of cadmium in silver

    International Nuclear Information System (INIS)

    Rockosch, H.J.; Herzig, C.

    1984-01-01

    The isotope effect of impurity diffusion of cadmium in silver single crystals was measured with the radioisotopes 115 Cd/ 109 Cd by gamma spectrometry. As a mean value E = 0.37 at T = 1060 K was obtained. The correlation factor f /SUB Cd/ = 0.41 is in disagreement with previous results of other investigators due to their unfavourable experimental approach. The present value of f /SUB Cd/ , however, is consistent with those of In and Sn in Ag. A comparison with the corresponding correlation factors in the copper solvent reveals a distinct influence of lattice perturbations because of the different atomic volumes of the solvents. Since the size effect is neglected in the electrostatic diffusion model, the agreement with this model is only qualitative. The frequency ratios for vacancy jumps were calculated. The free binding enthalpy of the vacancy-impurity complex was estimated to be Δg /SUB Cd/ = -0.064 eV. This value is smaller than those for In and Sn in Ag and complies with the relative diffusivities of these impurities in Ag

  17. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo [Tokyo Univ. (Japan). Inst. of Industrial Science

    1995-02-01

    Structural characteristics and electrooptical properties of Sn-doped In{sub 2}O{sub 3} (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO{sub 2} wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author).

  18. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo

    1995-01-01

    Structural characteristics and electrooptical properties of Sn-doped In 2 O 3 (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO 2 wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author)

  19. Structural and dielectric studies of Ce doped BaSnO3 perovskite nanostructures

    Science.gov (United States)

    Angel, S. Lilly; Deepa, K.; Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

    2018-04-01

    Undoped and Cerium (Ce) doped BaSnO3(BSO) nanostructures were synthesized by co-precipitation method. The cubic structure and perovskite phase were confirmed by X-ray diffraction (XRD). The crystallite size of BSO is 41nm and when Ce ion concentration is increased, the crystallite sizesdecreased. The nanocube, nanocuboids and nanorods are observed from SEM analysis. The purity of the undoped and doped samples are confirmed by EDS spectrum. For larger defects, wide band gap was obtained from UV-Vis and PL spectrum. The dielectric constants are increased at low frequencies when Ce impurities are introduced in the BSO matrix at Sn site.

  20. A Calibration to Predict Concentrations of Impurities in Plutonium Oxide by Prompt Gamma Analysis

    International Nuclear Information System (INIS)

    Narlesky, J.E.; Kelly, E.J.; Foster, L.A.

    2005-01-01

    Prompt gamma (PG) analysis has been used to identify the presence of certain impurities in plutonium oxide, which has been stored in 3013 containers. A regression analysis was used to evaluate the trends between the count rates obtained from PG analysis and the concentration of the impurities in plutonium oxide samples measured by analytical chemistry techniques. The results of the analysis were used to obtain calibration curves, which may be used to predict the concentration of Al, Be, Cl, F, Mg, and Na in the 3013 containers. The scatter observed in the data resulted from several factors including sample geometry, error in sampling for chemical assay, statistical counting error, and intimacy of mixing of impurities and plutonium. Standards prepared by mixing plutonium oxide with CaF 2 , NaCl, and KCl show that intimacy mixing and sampling error have the largest influence on the results. Although these factors are difficult to control, the calibrations are expected to yield semiquantitative results that are sufficient for the purpose of ordering or ranking

  1. Modeling of the interfacial separation work in relation to impurity concentration in adjoining materials

    Science.gov (United States)

    Alekseev, Ilia M.; Makhviladze, Tariel M.; Minushev, Airat Kh.; Sarychev, Mikhail E.

    2010-02-01

    On the basis of the general thermodynamic approach developed in a model describing the influence of point defects on the separation work at an interface of solid materials is developed. The kinetic equations describing the defect exchange between the interface and the material bulks are formulated. The model have been applied to the case when joined materials contain such point defects as impurity atoms (interstitial and substitutional), concretized the main characteristic parameters required for a numerical modeling as well as clarified their domains of variability. The results of the numerical modeling concerning the dependences on impurity concentrations and the temperature dependences are obtained and analyzed. Particularly, the effects of interfacial strengthening and adhesion incompatibility predicted analytically for the case of impurity atoms are verified and analyzed.

  2. Localization of the antimony impurity atoms in the PbTe lattice determined by the Moessbauer emission spectroscopy

    International Nuclear Information System (INIS)

    Masterov, V.F.; Nasredinov, F.S.; Nemov, S.A.; Seregin, P.P.; Troitskaya, N.N.; Bondarevskij, S.I.

    1997-01-01

    The 119 Sb ( 119m Sn) emission Moessbauer spectroscopy has shown that a localization of the antimony impurity atoms in the PbTe lattice is affected by the conductivity type of the host material, the antimony atoms occupied mainly anion and cation sites in n-type and p-type samples, respectively. The 119 Sn impurity in the anion sublattice of PbTe formed an decay. Its charge state was shown to be independent of the Fermi level position

  3. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

    Directory of Open Access Journals (Sweden)

    Useong Kim

    2014-05-01

    Full Text Available We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO3 system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

  4. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Useong; Park, Chulkwon; Kim, Rokyeon; Mun, Hyo Sik; Kim, Hoon Min; Kim, Namwook; Yu, Jaejun; Char, Kookrin, E-mail: kchar@phya.snu.ac.kr [Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ha, Taewoo; Kim, Jae Hoon [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Hyung Joon; Kim, Tai Hoon; Kim, Kee Hoon [Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-05-01

    We studied the conduction mechanism in Sb-doped BaSnO{sub 3} epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO{sub 3}. We found that the electron mobility in BaSnO{sub 3} films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO{sub 3} system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO{sub 3} films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

  5. Electronic and magnetic properties of SnS2 monolayer doped with non-magnetic elements

    Science.gov (United States)

    Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Wang, Ling-Ling

    2018-05-01

    We performed a systematic study of the electronic structures and magnetic properties of SnS2 monolayer doped with non-magnetic elements in groups IA, IIA and IIIA based on the first-principles methods. The doped systems exhibit half-metallic and metallic natures depending on the doping elements. The formation of magnetic moment is attributable to the cooperative effect of the Hund's rule coupling and hole concentration. The spin polarization can be stabilized and enhanced through confining the delocalized impurity states by biaxial tensile strain in hole-doped SnS2 monolayer. Both the double-exchange and p-p exchange mechanisms are simultaneously responsible for the ferromagnetic ground state in those hole-doped materials. Our results demonstrate that spin polarization can be induced and controlled in SnS2 monolayers by non-magnetic doping and tensile strain.

  6. Phase diagram of the ternary Zr-Ti-Sn system

    International Nuclear Information System (INIS)

    Arias, D.; Gonzalez Camus, M.

    1987-01-01

    It is well known that Ti stabilizes the high temperature cubic phase of Zr and that Sn stabilizes the low temperature hexagonal phase of Zr. The effect of Sn on the Zr-Ti diagram has been studied in the present paper. Using high purity metals, nine different alloys have been prepared, with 4-32 at % Ti, 0.7-2.2 at % Sn and Zr till 100%. Resistivity and optical and SEM metallography techniques have been employed. Effect of some impurities have been analyzed. The results are discussed and different isothermic sections of the ternary Zr-Ti-Sn diagram are presented. (Author) [es

  7. Comparative investigation on cation-cation (Al-Sn) and cation-anion (Al-F) co-doping in RF sputtered ZnO thin films: Mechanistic insight

    Energy Technology Data Exchange (ETDEWEB)

    Mallick, Arindam; Basak, Durga, E-mail: sspdb@iacs.res.in

    2017-07-15

    Highlights: • Comparative study on Al, Al-Sn and Al-F doped ZnO films has been carried out. • High transparent Al-F co-doped film shows three times enhanced carrier density. • Al-F co-doped film shows larger carrier relaxation time. • Al-Sn co-doped films shows carrier transport dominated by impurity scattering. • Al-F co-doped ZnO film can be applied as transparent electrode. - Abstract: Herein, we report a comparative mechanistic study on cation-cation (Al-Sn) and cation-anion (Al-F) co-doped nanocrystalline ZnO thin films grown on glass substrate by RF sputtering technique. Through detailed analyses of crystal structure, surface morphology, microstructure, UV-VIS-NIR transmission-reflection and electrical transport property, the inherent characteristics of the co-doped films were revealed and compared. All the nanocrystalline films retain the hexagonal wurtzite structure of ZnO and show transparency above 90% in the visible and NIR region. As opposed to expectation, Al-Sn (ATZO) co-doped film show no enhanced carrier concentration consistent with the probable formation of SnO{sub 2} clusters supported by the X-ray photoelectron spectroscopy study. Most interestingly, it has been found that Al-F (AFZO) co-doped film shows three times enhanced carrier concentration as compared to Al doped and Al-Sn co-doped films attaining a value of ∼9 × 10{sup 20} cm{sup −3} due to the respective cation and anion substitution. The carrier relaxation time increases in AFZO while it decreases significantly for ATZO film consistent with the concurrence of the impurity scattering in the latter.

  8. Effect of annealing and impurity concentration on the TL characteristics of nanocrystalline Mn-doped CaF2

    International Nuclear Information System (INIS)

    Sahare, P.D.; Singh, Manveer; Kumar, Pratik

    2015-01-01

    Nanocrystalline samples of Mn-doped CaF 2 were synthesized by chemical coprecipitation method. The impurity concentration was varied in the range of 0.5–4.0 mol%. The structure of the synthesized material was confirmed using powder XRD analysis. TEM images of the nanoparticles show their size occurring mostly in the range of 35–40 nm, with clusters of some impurity phases formed on annealing of the material at higher temperatures. Detailed studies on TL showed that the structures of glow curves depend on Mn concentrations and annealing temperatures. Optimization of the concentration and annealing temperature showed that the sample (doped with 3.0 mol% and annealed at 673 K) has almost a single dosimetric glow peak appearing at around 492 K. EPR and PL spectra were further studied to understand the reasons for changes in the glow curve structures. All detailed studies on TL, PL and EPR showed that the changes in glow curve structures are caused not only by the stress connected with the difference in ionic radii of host Ca 2+ and the guest impurity Mn 3+ /Mn 2+ , but are also governed by other reasons, like diffusion of atmospheric oxygen and formation of impurity aggregates, such as, MnO 2 , Mn 3 O 4 , etc. This is true not only for nanocrystalline CaF 2 :Mn but could also be so for the bulk CaF 2 :Mn (TLD-400) and would thus help in understanding complex glow curve structure, high fading and the loss of reusability on annealing beyond 673 K. - Highlights: • Nanocrystalline material CaF 2 :Mn is prepared by simple coprecipitation method. • The material is studied by XRD, TEM, ESR, TL and PL techniques. • High impurity concentrations give rise to clusters causing material instability. • Changes in ESR and PL and glow curve structures are studied and explained. • Better characteristics than the bulk make the nanophosphor useful for dosimetry

  9. Void growth suppression by dislocation impurity atmospheres

    International Nuclear Information System (INIS)

    Weertman, J.; Green, W.V.

    1976-01-01

    A detailed calculation is given of the effect of an impurity atmosphere on void growth under irradiation damage conditions. Norris has proposed that such an atmosphere can suppress void growth. The hydrostatic stress field of a dislocation that is surrounded by an impurity atmosphere was found and used to calculate the change in the effective radius of a dislocation line as a sink for interstitials and vacancies. The calculation of the impurity concentration in a Cottrell cloud takes into account the change in hydrostatic pressure produced by the presence of the cloud itself. It is found that void growth is eliminated whenever dislocations are surrounded by a condensed atmosphere of either oversized substitutional impurity atoms or interstitial impurity atoms. A condensed atmosphere will form whenever the average impurity concentration is larger than a critical concentration

  10. Different valence Sn doping - A simple way to detect oxygen concentration variation of ZnO quantum dots synthesized under ultrasonic irradiation.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Zhang, Qitu; Wang, Lixi; Song, Bo; Wu, Fan; Wong, C P

    2017-09-01

    An ultrasonic method is employed to synthesize the Sn doped Zn 0.95 Sn 0.05 O quantum dots with green light emission. Sn 2+ and Sn 4+ ions are used to create different optical defects inside Zn 0.95 Sn 0.05 O quantum dots and the changing trend of oxygen concentration under different ultrasonic irradiation power are investigated. The photoluminescence spectra are employed to characterize the optical defects of Zn 0.95 Sn 0.05 O quantum dots. The UV-vis spectra are used to study the band gap of Zn 0.95 Sn 0.05 O quantum dots, which is influenced by their sizes. The results indicate that ultrasonic power would influence the size of Zn 0.95 Sn 0.05 O quantum dots as well as the type and quantity of defects in ZnO quantum dots. Changing trends in size of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are quite similar with each other, while the changing trends in optical defects types and concentration of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are different. The difference of the optical defects concentration changing between Sn 2+ doped Zn 0.95 Sn 0.05 O quantum dots (V O defects) and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots (O Zn and O i defects) shows that the formation process of ZnO under ultrasonic irradiation wiped oxygen out. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

    Science.gov (United States)

    Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

    2018-04-01

    The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

  12. A calibration to predict the concentrations of impurities in plutonium oxide by prompt gamma analysis: Revision 1

    International Nuclear Information System (INIS)

    Narlesky, Joshua E.; Foster, Lynn A.; Kelly, Elizabeth J.; Murray, Roy E. IV

    2009-01-01

    Over 5,500 containers of excess plutonium-bearing materials have been packaged for long-term storage following the requirements of DOE-STD- 3013. Knowledge of the chemical impurities in the packaged materials is important because certain impurities, such as chloride salts, affect the behavior of the material in storage leading to gas generation and corrosion when sufficient moisture also is present. In most cases, the packaged materials are not well characterized, and information about the chemical impurities is limited to knowledge of the material's processing history. The alpha-particle activity from the plutonium and americium isotopes provides a method of nondestructive self-interrogation to identify certain light elements through the characteristic, prompt gamma rays that are emitted from alpha-particle-induced reactions with these elements. Gamma-ray spectra are obtained for each 3013 container using a highresolution, coaxial high-purity germanium detector. These gamma-ray spectra are scanned from 800 to 5,000 keV for characteristic, prompt gamma rays from the detectable elements, which include lithium, beryllium, boron, nitrogen, oxygen, fluorine, sodium, magnesium, aluminum, silicon, phosphorus, chlorine, and potassium. The lower limits of detection for these elements in a plutonium-oxide matrix increase with atomic number and range from 100 or 200 ppm for the lightest elements such as lithium and beryllium, to 19,000 ppm for potassium. The peak areas from the characteristic, prompt gamma rays can be used to estimate the concentration of the light-element impurities detected in the material on a semiquantitative basis. The use of prompt gamma analysis to assess impurity concentrations avoids the expense and the risks generally associated with performing chemical analysis on radioactive materials. The analyzed containers are grouped by impurity content, which helps to identify high-risk containers for surveillance and in sorting materials before packaging.

  13. Structural, optical, Induced ferromagnetism and anti-ferromagnetism in SnO2 nanoparticles by varying cobalt concentration

    International Nuclear Information System (INIS)

    Ali, Atif; Sarfraz, A.K.; Ali, Kashif; Mumtaz, A.

    2015-01-01

    The SnO 2 nanoparticles were prepared with different cobalt concentrations (0.0%, 0.5%, 1%, 3% and 4%) by chemical co-precipitation method. The NH 4 OH was used as precipitating agent; the pH value, reaction time and reaction temperature were optimized during synthesis. The x-ray diffraction (XRD) pattern reveals the formation of single phase tetragonal structure of undoped and cobalt doped SnO 2 nanoparticles which lies in the range of 19–22 nm calculated by De-Bye Scherrer's formula. The optical properties were studied by measuring the reflectance spectroscopy which shows that band gap energy decreases with increase in cobalt concentration. The magnetic characterization was performed by Quantum Design Physical property measurement system (PPMS). Interestingly magnetic measurements show that ferromagnetism in a Co doped SnO 2 becomes visible for x=0.5% and diminishes with further increasing of cobalt concentration. - Highlights: • SnO 2 nanoparticles were prepared with different cobalt concentrations (0.0 % 0.5%, 1%, 3% and 4%) by the chemical co-precipitation method. • Structure was confirmed through x-ray diffraction (XRD) analysis. • The optical properties were studied by measuring the reflectance spectroscopy. • The magnetic characterization was performed

  14. Report on intercomparison exercise SR-74 determination of impurities in U3O8

    International Nuclear Information System (INIS)

    Doubek, N.; Deron, S.

    1987-06-01

    The report presents results of a laboratory intercomparison of the determination of impurities in U 3 O 8 sample organized by the IAEA. Seven laboratories of six countries, sent their results regarding 31 elements. The evaluation was based on 121 laboratory means. The majority of the results were obtained by emission spectroscopy and by flame atomic absorption techniques. As a result of this intercomparison, recommended certification values can be assigned for the concentration of Cr, Cu and Mg. Information values can be provided for an additional twelve elements (Al, B, Co, Fe, Mn, Mo, Ni, P, Pb, Sn, V, and Zn)

  15. Trace impurity analyzer

    International Nuclear Information System (INIS)

    Schneider, W.J.; Edwards, D. Jr.

    1979-01-01

    The desirability for long-term reliability of large scale helium refrigerator systems used on superconducting accelerator magnets has necessitated detection of impurities to levels of a few ppM. An analyzer that measures trace impurity levels of condensable contaminants in concentrations of less than a ppM in 15 atm of He is described. The instrument makes use of the desorption temperature at an indicated pressure of the various impurities to determine the type of contaminant. The pressure rise at that temperature yields a measure of the contaminant level of the impurity. A LN 2 cryogenic charcoal trap is also employed to measure air impurities (nitrogen and oxygen) to obtain the full range of contaminant possibilities. The results of this detector which will be in use on the research and development helium refrigerator of the ISABELLE First-Cell is described

  16. Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Campbell, R. B.; Blais, P. D.; Rai-Choudhury, P.; Stapleton, R. E.; Mollenkopf, H. C.; Mccormick, J. R.

    1980-01-01

    Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

  17. Synthesis and characterization of Sn doped TiO{sub 2} photocatalysts: Effect of Sn concentration on the textural properties and on the photocatalytic degradation of 2,4-dichlorophenoxyacetic acid

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Vázquez, I.; Del Angel, G.; Bertin, V. [Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); González, F. [Departamento de Ingeniería de Procesos e Hidráulica, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); Vázquez-Zavala, A.; Arrieta, A. [Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); Padilla, J.M. [Universidad Tecnológica del Centro de Veracruz, Área de Tecnología, Av. Universidad Carretera Federal Cuitláhuac-La Tinaja No. 350, Cuitláhuac, Veracruz 94910 (Mexico); Barrera, A. [Universidad de Guadalajara, Centro Universitario de la Ciénega, Av. Universidad, Número 1115, Col. Linda Vista, Apdo. Postal 106, Ocotlán Jal. (Mexico); Ramos-Ramirez, E. [Departamento de Química, División de Ciencias Naturales y Exactas, Campus Guanajuato de la Universidad de Guanajuato Noria Alta S/N, Col. Noria Alta, Guanajuato, Gto. C.P. 36050 (Mexico)

    2015-09-15

    Abstract: TiO{sub 2} and Sn-doped TiO{sub 2} materials were prepared by sol–gel method using titanium and tin alkoxides at different Sn concentration (0.1 mol%, 0.5 mol%, 1 mol%, 3 mol% and 5 mol%). Samples were characterized by thermo gravimetric analyzer with differential scanning calorimeter (TGA–DSC), X-ray Rietveld refinement, N{sub 2} adsorption (BET), transmission electron microscopy (TEM), UV–vis spectroscopies technology and Raman spectroscopy. Only anatase phase was observed in pure TiO{sub 2}, whereas anatase and brookite were obtained in Sn-doped TiO{sub 2} samples. Sn dopant acts as a promoter in phase transformation of TiO{sub 2}. The Rietveld refinements method was used to determine the relative weight of anatase and brookite, and crystallite size as a function of Sn concentration after calcination of samples at 673 K. It was also demonstrated the incorporation of Sn{sup 4+} into the anatase TiO{sub 2} structure. Sn{sup 4+} inhibits the growth of TiO{sub 2} crystallite size, which leads to an increase of the specific surface area of TiO{sub 2}. From XRD analysis, the solid solution limit of Sn{sup 4+} into TiO{sub 2} is 5 mol% Sn. The photocatalytic activity on Sn{sup 4+} doped TiO{sub 2} was determined for the 2,4-dichlorophenoxyacetic acid reaction. The maximum in activity was attributed to the coexistence of anatase and brookite phases in the appropriate ratio and crystallite size.

  18. Measuring and controlling method for organic impurities

    International Nuclear Information System (INIS)

    Aizawa, Motohiro; Igarashi, Hiroo

    1995-01-01

    The present invention concerns measurement and control for organic impurities contained in ultrapurified water for use in a nuclear power plant. A specimen containing organic impurities leached out of anionic exchange resins and cationic exchange resins is introduced to an organic material decomposing section to decompose organic impurities into organic carbon and other decomposed products. Sulfate ions, nitrate ions, nitrite ions and carbon dioxide are produced by the decomposition of the organic impurities. As a next step, carbon dioxide in the decomposed products is separated by deaerating with a nitrogen gas or an argon gas and then a TOC concentration is measured by a non-dispersion-type infrared spectrometer. Further, a specimen from which carbon dioxide was separated is introduced to a column filled with ion exchange resins and, after concentrating inorganic ion impurities, the inorganic ion impurities are identified by using a measuring theory of an ion chromatographic method of eluting and separating inorganic ion impurities and detecting them based on the change of electroconductivity depending on the kinds of the inorganic ion impurities. Organic impurities can be measured and controlled, to improve the reliability of water quality control. (N.H.)

  19. Concentration dependence of fluorine impurity spin-lattice relaxation rate in bone mineral

    International Nuclear Information System (INIS)

    Code, R.F.; Armstrong, R.L.; Cheng, P.-T.

    1992-01-01

    The concentration dependence of the fluoride ion spin-lattice relaxation rate has been observed by nuclear magnetic resonance experiments on samples of defatted and dried bone. The 19 F spin-lattice relaxation rates increased linearly with bone fluoride concentration. Different results were obtained from trabecular than from cortical bone. For the same macroscopic fluoride content per gram of bone calcium, relaxation rate is significantly faster in cortical bone. Relaxation rates in cortical bone samples prepared from rats and dogs were apparently controlled by the same species-independent processes. For samples from beagle dogs, bulk fluoride concentrations measured by neutron activation analysis were 3.1±0.3 times greater in trabecular bone than in corresponding cortical bone. The beagle spin-lattice relaxation data suggest that microscopic fluoride concentrations in bone mineral were 1.8±0.4 times greater in trabecular bone than in cortical bone. It is concluded that accumulation of fluoride impurities in bone mineral is non-uniform. (author)

  20. Impurity diffusion in transition-metal oxides

    International Nuclear Information System (INIS)

    Peterson, N.L.

    1982-06-01

    Intrinsic tracer impurity diffusion measurements in ceramic oxides have been primarily confined to CoO, NiO, and Fe 3 O 4 . Tracer impurity diffusion in these materials and TiO 2 , together with measurements of the effect of impurities on tracer diffusion (Co in NiO and Cr in CoO), are reviewed and discussed in terms of impurity-defect interactions and mechanisms of diffusion. Divalent impurities in divalent solvents seem to have a weak interaction with vacancies whereas trivalent impurities in divalent solvents strongly influence the vacancy concentrations and significantly reduce solvent jump frequencies near a trivalent impurity. Impurities with small ionic radii diffuse more slowly with a larger activation energy than impurities with larger ionic radii for all systems considered in this review. Cobalt ions (a moderate size impurity) diffuse rapidly along the open channels parallel to the c-axis in TiO 2 whereas chromium ions (a smaller-sized impurity) do not. 60 references, 11 figures

  1. The effects of impurity composition and concentration in reactor structure material on neutron activation inventory in pressurized water reactor

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Gil Yong; Kim, Soon Young [RADCORE, Daejeon (Korea, Republic of); Lee, Jae Min [TUV Rheinland Korea, Seoul (Korea, Republic of); Kim, Yong Soo [Hanyang University, Seoul (Korea, Republic of)

    2016-06-15

    The neutron activation inventories in reactor vessel and its internals, and bio-shield of a PWR nuclear power plant were calculated to evaluate the effect of impurity elements contained in the structural materials on the activation inventory. Carbon steel is, in this work, used as the reactor vessel material, stainless steel as the reactor vessel internals, and ordinary concrete as the bio-shield. For stainless steel and carbon steel, one kind of impurity concentration was employed, and for ordinary concrete five kinds were employed in this study using MCNP5 and FISPACT for the calculation of neutron flux and activation inventory, respectively. As the results, specific activities for the cases with impurity elements were calculated to be more than twice than those for the cases without impurity elements in stainless and carbon steel. Especially, the specific activity for the concrete material with impurity elements was calculated to be 30 times higher than that without impurity. Neutron induced reactions and activation inventories in each material were also investigated, and it is noted that major radioactive nuclide in steel material is Co-60 from cobalt impurity element, and, in concrete material, Co-60 and Eu-152 from cobalt and europium impurity elements, respectively. The results of this study can be used for nuclear decommissioning plan during activation inventory assessment and regulation, and it is expected to be used as a reference in the design phase of nuclear power plant, considering the decommissioning of nuclear power plants or nuclear facilities.

  2. Effect of doping of OH- and CN- on the liberation of I2 molecules in KI by gamma-irradiation, impurity concentration effect

    International Nuclear Information System (INIS)

    Shirke, A.K.; Pode, R.B.; Deshmukh, B.T.

    1996-01-01

    Photodecomposition of pure and doped KI powder (KI:KOH; KI:KCN; Impurity concentration, 100, 300, 500, 700 and 1000 ppm) to produce free I 2 molecules during gamma irradiation is studied with the help of absorption and IR measurements. Large number of I 2 molecules are formed in pure KI as compared to the doped samples. Hydroxide impurity increases the rate of liberation of I 2 molecules whereas the cyanide impurity decreases the rate of liberation of I 2 molecules. (Author)

  3. Structural, dielectric and magnetic properties of SnO{sub 2}-CuFe{sub 2}O{sub 4} nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Kashif [Department of Physics, International Islamic University, Islamabad (Pakistan); Iqbal, Javed, E-mail: javed.saggu@qau.edu.pk [Laboratory of Nanoscience and Technology (LNT), Department of Physics, Qaid-i-Azam University, Islamabad (Pakistan); Jan, Tariq [Department of Physics, University of Lahore, Sargodha Campus, Sargodha (Pakistan); Wan, Dongyun [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Ahmad, Naeem [Department of Physics, International Islamic University, Islamabad (Pakistan); Ahamd, Ishaq [Experimental Physics Labs, National Center for Physics, Islamabad (Pakistan); Ilyas, Syed Zafar [Department of Physics, Allama Iqbal Open University, Islamabad (Pakistan)

    2017-04-15

    The nanocomposites of (SnO{sub 2}){sub x}(CuFe{sub 2}O{sub 4}){sub (1−x)} (where x=0–100 wt%) have been successfully synthesized via two steps chemical method. XRD pattern has revealed the formation of inverse spinal phases with tetragonal crystal structure without any impurity phases for CuFe{sub 2}O{sub 4} sample. The thermodynamic solubility limit of SnO{sub 2} in CuFe{sub 2}O{sub 4} matrix has been found to be 30 wt% and above this percentage crystal phases related to SnO{sub 2} started to appear. The average particle size and shape of CuFe{sub 2}O{sub 4} nanoparticles have been strongly influenced by addition of SnO{sub 2} as depicted by TEM results. FTIR results have confirmed the existence of cation vibration bands at tetrahedral and octahedral sites along with Sn-O vibration band at higher concentrations, which also validates the formation of nanocomposites. Furthermore, the dielectric constant, tangent loss and conductivity of CuFe{sub 2}O{sub 4} nanoparticles have been found to increase up to 30 wt% addition of SnO{sub 2} and then decreases with further increase which is attributed to variations in resistivity and space charge carriers. Magnetic measurements have shown that saturation magnetization decreases from 35.68 emu/gm to 10.26 emu/gm with the addition of SnO{sub 2} content. - Highlights: • SnO{sub 2}-CuFe{sub 2}O{sub 4} nanocomposites with varying SnO{sub 2} concentrations were synthesized. • The thermodynamic solubility limit for SnO{sub 2} into CuFe{sub 2}O{sub 4} matrix by employing current method was found to be ≤30 wt%. • At higher concentrations, structural phases related to SnO{sub 2} started to appear. • FTIR results corroborated well with the XRD results. • It has been observed that the addition of SnO{sub 2} significantly influence the morphology, dielectric and magnetic properties of CuFe{sub 2}O{sub 4} nanoparticles.

  4. Analytical model of impurity concentration during steam generation in permeable porous structures

    International Nuclear Information System (INIS)

    Polonskii, V.S.; Orlov, A.V.

    1993-01-01

    A model is proposed to describe the mass transfer of impurities during steam generation on a surface covered by porous deposits of corrosion products. The model is based on replacement of the actual structure of the deposits by a system of cylindrical fluid and vapor channels in which the flow of vapor and a liquid film is described by the Navier-Stokes equations. The driving force in the process is assumed to be the difference in the Laplacian pressures due to surface tension on the front and back sides of elongated vapor bubbles. Calculations performed for the operating conditions of the drums of the steam generators of nuclear power plants with water-moderated water-cooled reactors show that the mass transfer rate is extremely low in the gaps in cold drums and that the concentration of aggressive impurities deep within these channels may reach two or more orders of magnitude-thus leading to rapid corrosion. Almost complete vaporization occurs in the capillary channels of hot drums with deposits, which probably precludes corrosion in the channel depths. However, corrosion damage remains a possibility at the entrance to the channels (on the side of the second loop)

  5. Change in the electrical conductivity of SnO2 crystal from n-type to p-type conductivity

    International Nuclear Information System (INIS)

    Villamagua, Luis; Stashans, Arvids; Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi; Carini, Manuela

    2015-01-01

    Highlights: • Switch from n-type to p-type conductivity in SnO 2 has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO 2 compound shows stable p-type conductivity. • Low resistivity (3.657 × 10 −1 Ω cm) has been obtained. • High carrier concentration (4.858 × 10 19 cm −3 ) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO 2 systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO 2 material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling

  6. Carrier concentration dependence of structural disorder in thermoelectric Sn1−xTe

    Directory of Open Access Journals (Sweden)

    Mattia Sist

    2016-09-01

    Full Text Available SnTe is a promising thermoelectric and topological insulator material. Here, the presumably simple rock salt crystal structure of SnTe is studied comprehensively by means of high-resolution synchrotron single-crystal and powder X-ray diffraction from 20 to 800 K. Two samples with different carrier concentrations (sample A = high, sample B = low have remarkably different atomic displacement parameters, especially at low temperatures. Both samples contain significant numbers of cation vacancies (1–2% and ordering of Sn vacancies possibly occurs on warming, as corroborated by the appearance of multiple phases and strain above 400 K. The possible presence of disorder and anharmonicity is investigated in view of the low thermal conductivity of SnTe. Refinement of anharmonic Gram–Charlier parameters reveals marginal anharmonicity for sample A, whereas sample B exhibits anharmonic effects even at low temperature. For both samples, no indications are found of a low-temperature rhombohedral phase. Maximum entropy method (MEM calculations are carried out, including nuclear-weighted X-ray MEM calculations (NXMEM. The atomic electron densities are spherical for sample A, whereas for sample B the Te electron density is elongated along the 〈100〉 direction, with the maximum being displaced from the lattice position at higher temperatures. Overall, the crystal structure of SnTe is found to be defective and sample-dependent, and therefore theoretical calculations of perfect rock salt structures are not expected to predict the properties of real materials.

  7. Impurity Correction Techniques Applied to Existing Doping Measurements of Impurities in Zinc

    Science.gov (United States)

    Pearce, J. V.; Sun, J. P.; Zhang, J. T.; Deng, X. L.

    2017-01-01

    Impurities represent the most significant source of uncertainty in most metal fixed points used for the realization of the International Temperature Scale of 1990 (ITS-90). There are a number of different methods for quantifying the effect of impurities on the freezing temperature of ITS-90 fixed points, many of which rely on an accurate knowledge of the liquidus slope in the limit of low concentration. A key method of determining the liquidus slope is to measure the freezing temperature of a fixed-point material as it is progressively doped with a known amount of impurity. Recently, a series of measurements of the freezing and melting temperature of `slim' Zn fixed-point cells doped with Ag, Fe, Ni, and Pb were presented. Here, additional measurements of the Zn-X system are presented using Ga as a dopant, and the data (Zn-Ag, Zn-Fe, Zn-Ni, Zn-Pb, and Zn-Ga) have been re-analyzed to demonstrate the use of a fitting method based on Scheil solidification which is applied to both melting and freezing curves. In addition, the utility of the Sum of Individual Estimates method is explored with these systems in the context of a recently enhanced database of liquidus slopes of impurities in Zn in the limit of low concentration.

  8. Electron exchange between tin impurity U{sup –} centers in PbS{sub z}Se{sub 1–z} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Marchenko, A. V. [Alexander Herzen State Pedagogical University of Russia (Russian Federation); Terukov, E. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Seregin, P. P., E-mail: ppseregin@mail.ru; Rasnjuk, A. N.; Kiselev, V. S. [Alexander Herzen State Pedagogical University of Russia (Russian Federation)

    2016-07-15

    Using emission {sup 119mm}Sn({sup 119m}Sn) and {sup 119}Sb({sup 119m}Sn) Mössbauer spectroscopy, it is shown that impurity tin atoms in PbS{sub z}Se{sub 1–z} alloys substitute lead atoms and are two-electron donors with negative correlation energy (U{sup –} centers). It is found that the energy levels related to impurity tin atoms are in the lower half of the band gap at z ≥ 0.5 against the background of allowed valence-band states at z ≤ 0.4. The electron exchange between neutral and doubly ionized tin U{sup –} centers in partially compensated Pb{sub 0.99}Sn{sub 0.005}Na{sub 0.005}S{sub z}Se{sub 1–z} alloys is studied. The activation energy of this process decreases from 0.111(5) eV for a composition with z = 1 to 0.049(5) eV for compositions with c ≤ 0. For all z, the exchange is implemented via the simultaneous transfer of two electrons using delocalized valence-band states.

  9. Beneficiation of titanium concentrate (anatase) by HCl/H2O2 leaching of impurities

    International Nuclear Information System (INIS)

    Trindade, R.B.E.; Teixeira, L.A.C.

    1988-01-01

    The HCl/H 2 O 2 leaching of impurities from a Brazilian anatase (TiO 2 ) concentrate has been investigated by factorial experimentations. The effects of the following variables were investigated: temperature (50-90 0 C), redox potential (with and without oxidizing agent-H 2 O 2 ) and HCl concentration (4-18,5%). The conclusions were based on the analyses of Fe, Ca, P, Al, Si, Th,Ce, La, U and Ti in the beneficiated concentrates. The final results recommended the following optimum operational conditions, in a four stage countercurrent leaching: in the 4 th reactor (discharge of beneficiated concentrate): HCl fed at 18.5%, T=75 0 C, and addition of H 2 O 2 at a potential (eH) of 850 mV; in the first three reactors: T=90 0 C; with no oxidizing agent. (author) [pt

  10. Low Z impurity transport in tokamaks

    International Nuclear Information System (INIS)

    Hawryluk, R.J.; Suckewer, S.; Hirshman, S.P.

    1978-10-01

    Low Z impurity transport in tokamaks was simulated with a one-dimensional impurity transport model including both neoclassical and anomalous transport. The neoclassical fluxes are due to collisions between the background plasma and impurity ions as well as collisions between the various ionization states. The evaluation of the neoclassical fluxes takes into account the different collisionality regimes of the background plasma and the impurity ions. A limiter scrapeoff model is used to define the boundary conditions for the impurity ions in the plasma periphery. In order to account for the spectroscopic measurements of power radiated by the lower ionization states, fluxes due to anomalous transport are included. The sensitivity of the results to uncertainties in rate coefficients and plasma parameters in the periphery are investigated. The implications of the transport model for spectroscopic evaluation of impurity concentrations, impurity fluxes, and radiated power from line emission measurements are discussed

  11. Low-Z impurities in PLT

    International Nuclear Information System (INIS)

    Hinnov, E.; Suckewer, S.; Bol, K.; Hawryluk, R.; Hosea, J.; Meservey, E.

    1977-11-01

    Low-Z impurities concentrations (oxygen and carbon) have been measured in different discharges in PLT. The contribution to Z/sub eff/, influx rates and radiation losses by oxygen and carbon were obtained. An inverse correlation was found between the low-Z impurity density (and also the edge ion temperature) and the high-Z impurity (tungsten) density. A one-dimensional computer transport model has been used to calculate the spatial profiles of different oxygen and carbon ionization states. This model predicts that fully stripped oxygen and carbon ions should exist near the plasma periphery

  12. Preparation of Cu2Sn3S7 Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

    Directory of Open Access Journals (Sweden)

    Tai-Hsiang Lui

    2015-01-01

    Full Text Available Cu2Sn3S7 (CTS can be used as the light absorbing layer for thin-film solar cells due to its good optical properties. In this research, the powder, baking, sulfur, and sintering (PBSS process was used instead of vacuum sputtering or electrochemical preparation to form CTS. During sintering, Cu and Sn powders mixed in stoichiometric ratio were coated to form the thin-film precursor. It was sulfurized in a sulfur atmosphere to form CTS. The CTS film metallurgy mechanism was investigated. After sintering at 500°C, the thin film formed the Cu2Sn3S7 phase and no impurity phase, improving its energy band gap. The interface of CTS film is continuous and the formation of intermetallic compound layer can increase the carrier concentration and mobility. Therefore, PBSS process prepared CTS can potentially be used as a solar cell absorption layer.

  13. Donor impurity-related linear and nonlinear optical absorption coefficients in GaAs/Ga1−xAlxAs concentric double quantum rings: Effects of geometry, hydrostatic pressure, and aluminum concentration

    International Nuclear Information System (INIS)

    Baghramyan, H.M.; Barseghyan, M.G.; Kirakosyan, A.A.; Restrepo, R.L.; Mora-Ramos, M.E.; Duque, C.A.

    2014-01-01

    The linear and nonlinear optical absorption associated with the transition between 1s and 2s states corresponding to the electron-donor-impurity complex in GaAs/Ga 1−x Al x As three-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and the variation of the aluminum concentration, the energies of the ground and first excited s-like states of a donor impurity in such a system have been calculated using the effective mass approximation and a variational method. The energies of these states and the corresponding threshold energy of the optical transitions are examined as functions of hydrostatic pressure, aluminum concentration, radial impurity position, as well as the geometrical dimensions of the structure. The dependencies of the linear, nonlinear and total optical absorption coefficients as functions of the incident photon energy are investigated for different values of those mentioned parameters. It is found that the influences mentioned above lead to either redshifts or blueshifts of the resonant peaks of the optical absorption spectrum. It is particularly discussed the unusual property exhibited by the third-order nonlinear of becoming positive for photon energies below the resonant transition one. It is shown that this phenomenon is associated with the particular features of the system under study, which determine the values of the electric dipole moment matrix elements. -- Highlights: • Intra-band optical absorption associated to impurity states in double quantum rings. • Combined effects of hydrostatic pressure and aluminum concentration are studied. • The influences mentioned above lead to shifts of resonant peaks. • It is discussed an unusual property exhibited by the third-order nonlinear absorption

  14. Phase transition of DNA-linked gold nanoparticles: Creation of a high concentration of atomic hydrogen in impurity-helium solids

    International Nuclear Information System (INIS)

    Kiselev, S.I.; Khmelenko, V.V.; Bernard, E.P.; Lee, C.Y.; Lee, D.M.

    2003-01-01

    The exchange tunneling reactions D+H 2 →HD+H and D+HD→D 2 +H were used to generate high concentrations of atomic hydrogen in impurity-helium solids. The dependence of atom concentration on the content of hydrogen in the injected gas mixture gave a maximum concentration of 7.5x10 17 cm -3 hydrogen atoms for an initial gas ratio H 2 :D 2 :He=1:4:100

  15. Spectrochemical analysis of impurities in nickel and in nickel oxide

    International Nuclear Information System (INIS)

    Goldbart, Z.; Lorber, A.; Harel, A.

    1981-11-01

    Various spectrochemical methods are described for the quantitative determination of 23 impurities in metallic nickel and in nickel oxide. The average limit of detection is from 1 to 5 ppm and the dynamic range lies over 2.5 orders of magnitude. The elements that were determined are: Al,B,Ba,Bi,Ca,Cd,Co,Cu,Fe,Ga,Ge,In,Mg,Mn,Mo,Nb,Si,Sn,Sr,Ti,Cr,V. (author)

  16. Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

    Directory of Open Access Journals (Sweden)

    Mohd Sabri Mohd Ghazali

    2011-09-01

    Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

  17. Synthesis and superconductivity of In-doped SnTe nanostructures

    Directory of Open Access Journals (Sweden)

    Piranavan Kumaravadivel

    2017-07-01

    Full Text Available InxSn1−xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize InxSn1−xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of InxSn1−xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications.

  18. Change in the electrical conductivity of SnO{sub 2} crystal from n-type to p-type conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Villamagua, Luis, E-mail: luis.villamagua@tyndall.ie [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy); Stashans, Arvids [Grupo de Fisicoquímica de Materiales, Universidad Técnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Lee, Po-Ming; Liu, Yen-Shuo; Liu, Cheng-Yi [Department of Chemical and Materials Engineering, National Central University, Jhong-Li, Taiwan (China); Carini, Manuela [Dipartimento di Ingegneria per l’Ambiente e il Territorio e Ingegneria Chimica, Università della Calabria, 87036 Rende (CS) (Italy)

    2015-05-01

    Highlights: • Switch from n-type to p-type conductivity in SnO{sub 2} has been studied. • Computational DFT + U method where used. • X-ray diffraction and X-ray photoelectron spectroscopy where used. • Al- and N-codoped SnO{sub 2} compound shows stable p-type conductivity. • Low resistivity (3.657 × 10{sup −1} Ω cm) has been obtained. • High carrier concentration (4.858 × 10{sup 19} cm{sup −3}) has been obtained. - Abstract: The long-sought fully transparent technology will not come true if the n region of the p–n junction does not get as well developed as its p counterpart. Both experimental and theoretical efforts have to be used to study and discover phenomena occurring at the microscopic level in SnO{sub 2} systems. In the present paper, using the DFT + U approach as a main tool and the Vienna ab initio Simulation Package (VASP) we reproduce both intrinsic n-type as well as p-type conductivity in concordance to results observed in real samples of SnO{sub 2} material. Initially, an oxygen vacancy (1.56 mol% concentration) combined with a tin-interstitial (1.56 mol% concentration) scheme was used to achieve the n-type electrical conductivity. Later, to attain the p-type conductivity, crystal already possessing n-type conductivity, was codoped with nitrogen (1.56 mol% concentration) and aluminium (12.48 mol% concentration) impurities. Detailed explanation of structural changes endured by the geometry of the crystal as well as the changes in its electrical properties has been obtained. Our experimental data to a very good extent matches with the results found in the DFT + U modelling.

  19. Moessbauer Studies of Implanted Impurities in Solids

    CERN Multimedia

    2002-01-01

    Moessbauer studies were performed on implanted radioactive impurities in semiconductors and metals. Radioactive isotopes (from the ISOLDE facility) decaying to a Moessbauer isotope were utilized to investigate electronic and vibrational properties of impurities and impurity-defect structures. This information is inferred from the measured impurity hyperfine interactions and Debye-Waller factor. In semiconductors isoelectronic, shallow and deep level impurities have been implanted. Complex impurity defects have been produced by the implantation process (correlated damage) or by recoil effects from the nuclear decay in both semiconductors and metals. Annealing mechanisms of the defects have been studied. \\\\ \\\\ In silicon amorphised implanted layers have been recrystallized epitaxially by rapid-thermal-annealing techniques yielding highly supersaturated, electrically-active donor concentrations. Their dissolution and migration mechanisms have been investigated in detail. The electronic configuration of Sb donors...

  20. A facile and low cost synthesis of earth abundant element Cu{sub 2}ZnSnS{sub 4} (CZTS) nanocrystals: Effect of Cu concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Seung Wook; Han, Jun Hee [Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Park, Chan Yeong; Kim, Sae-Rok; Park, Yeon Chan; Agawane, G.L. [Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500-757 (Korea, Republic of); Moholkar, A.V. [Electrochemical Mat. Lab, Department of Physics, Shivaji University, Kolhapur 416-004 (India); Yun, Jae Ho [Photovoltaic Research Group, Korea Institute of Energy Research, 71-2 Jang-Dong, Yuseong-Gu, Daejeon 305-343 (Korea, Republic of); Jeong, Chae Hwan [Solar City Center, Development of Advanced Components and Materials Korea Institute of Industrial Technology, Gwangju 500-480 (Korea, Republic of); Lee, Jeong Yong, E-mail: j.y.lee@kaist.ac.kr [Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500-757 (Korea, Republic of)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Cu{sub 2}ZnSnS{sub 4} (CZTS) nanocrystals (NCs) were prepared by sulfurization of microwave assisted precursor without toxic chemicals. Black-Right-Pointing-Pointer Effect of Cu concentration on the properties of CZTS NCs was investigated using various analysis methods. Black-Right-Pointing-Pointer The properties of CZTS NCs was strongly related to the Cu concentrations. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) nanocrystals (NCs) were synthesized by sulfurization of microwave assisted precursor powders without toxic chemicals. The effects of different Cu concentration from 0.01 to 0.025 M on the structural, morphological, compositional, chemical and optical properties of CZTS NCs were investigated. X-ray diffraction patterns, X-ray photoelectron spectroscopy and transmission electron microscopy results showed that the precursor powder contains several broad peaks that could not be assigned to CZTS, ZnS, Cu{sub 2-x}S, Sn{sub 2}S{sub 3} and Cu{sub 2}SnS{sub 3}. However, the sulfurized NCs showed both kesterite CZTS and Cu- and Sn-based secondary phases except for that formed at Cu concentration of 0.02 M. Inductively coupled plasma (ICP) results showed that the presence of Cu in the sulfurized CZTS NCs increased with increasing Cu concentration from 16.57 to 32.94 at.% while Zn and Sn in the sulfurized CZTS NCs decreased with increasing Cu concentration. UV-Vis spectroscopy results showed that the absorption coefficient of the sulfurized NCs was over 10{sup 4} cm{sup -1} in the visible region and band gap energy of the sulfurized CZTS NCs decreased from 1.65 to 1.28 eV with increasing Cu concentration.

  1. An empirical method for determination of elemental components of radiated powers and impurity concentrations from VUV and XUV spectral features in tokamak plasmas

    International Nuclear Information System (INIS)

    Lawson, K.; Peacock, N.; Gianella, R.

    1998-12-01

    The derivation of elemental components of radiated powers and impurity concentrations in bulk tokamak plasmas is complex, often requiring a full description of the impurity transport. A novel, empirical method, the Line Intensity Normalization Technique (LINT) has been developed on the JET (Joint European Torus) tokamak to provide routine information about the impurity content of the plasma and elemental components of radiated power (P rad ). The technique employs a few VUV and XUV resonance line intensities to represent the intrinsic impurity elements in the plasma. From a data base comprising these spectral features, the total bolometric measurement of the radiated power and the Z eff measured by visible spectroscopy, separate elemental components of P rad and Z eff are derived. The method, which converts local spectroscopic signals into global plasma parameters, has the advantage of simplicity, allowing large numbers of pulses to be processed, and, in many operational modes of JET, is found to be both reliable and accurate. It relies on normalizing the line intensities to the absolute calibration of the bolometers and visible spectrometers, using coefficients independent of density and temperature. Accuracies of the order of ± 15% can be achieved for the elemental P rad components of the most significant impurities and the impurity concentrations can be determined to within ±30%. Trace elements can be monitored, although with reduced accuracy. The present paper deals with limiter discharges, which have been the main application to date. As a check on the technique and to demonstrate the value of the LINT results, they have been applied to the transport modelling of intrinsic impurities carried out with the SANCO transport code, which uses atomic data from ADAS. The simulations provide independent confirmation of the concentrations empirically derived using the LINT technique. For this analysis, the simple case of the L-mode regime is considered, the chosen

  2. Study of the corrosion behavior and the corrosion films formed on the surfaces of Mg–xSn alloys in 3.5 wt.% NaCl solution

    International Nuclear Information System (INIS)

    Wang, Jingfeng; Li, Yang; Huang, Song; Zhou, Xiaoen

    2014-01-01

    Highlights: • Corrosion of four cast Mg–xSn alloys in 3.5 wt.% NaCl solution was investigated. • Both Mg(OH) 2 /SnO 2 corrosion product film and Mg(OH) 2 /MgSnO 3 clusters formed on Mg–1.5Sn. • Compact Mg(OH) 2 /MgSnO 3 film suppressed the cathodic effect of the impurity inclusions. • Mg–xSn (x = 0.5, 1.0, 2.0 wt.%) alloys only formed loose Mg(OH) 2 /SnO 2 corrosion product film. - Abstract: The corrosion behavior and the corrosion films formed on the surfaces of Mg–xSn (x = 0.5, 1.0, 1.5, and 2.0 wt.%) alloys in 3.5 wt.% NaCl solution were investigated by immersion tests, electrochemical measurements, corrosion morphology observations, and X-ray diffraction analysis. Immersion tests and electrochemical measurements illustrated that the best corrosion resistance was reported for the Mg–1.5Sn alloy. Both Mg(OH) 2 /SnO 2 corrosion product film and Mg(OH) 2 /MgSnO 3 clusters formed on Mg–1.5Sn alloy surface. Mg(OH) 2 /MgSnO 3 clusters were compact and suppressed the cathodic effect of the impurity inclusions greatly. The Mg–xSn (x = 0.5, 1.0, and 2.0 wt.%) alloys only formed loose Mg(OH) 2 /SnO 2 corrosion product film during the corrosion process

  3. Phase controlled solvothermal synthesis of Cu_2ZnSnS_4, Cu_2ZnSn(S,Se)_4 and Cu_2ZnSnSe_4 Nanocrystals: The effect of Se and S sources on phase purity

    International Nuclear Information System (INIS)

    Pal, Mou; Mathews, N.R.; Paraguay-Delgado, F.; Mathew, X.

    2015-01-01

    In this study, we have reported the synthesis of Cu_2ZnSnSe_4 (CZTSe), Cu_2ZnSnS_4 (CZTS) and Cu_2ZnSn(S,Se)_4 (CZTSSe) nanocrystals with tunable band gap and composition obtained by solvothermal method. The crystalline structure, composition, morphology and optical properties of the nanoparticles were characterized by X-ray diffraction (XRD), Raman scattering, energy dispersive X-ray spectroscopy, transmission electron microscopy and diffuse reflectance (DR) spectroscopy. While the XRD patterns of CZTS and CZTSe nanoparticles prepared with elemental S/Se powder revealed the presence of phase pure nanoparticles, the CZTSSe nanoparticles obtained using a mixture of S and Se, were found to contain many secondary phases under the same synthesis protocol. Formation of impurity phases in CZTSSe sample, can be avoided by using a mixture of 1-dodecanethiol (DT; CH_3(CH_2)_1_1SH)/oleylamine (OLA) instead of S powder and following the same experimental procedure. The incorporation of S in CZTSe nanocrystals prepared in presence of DDT/OLA mixture was confirmed through structural and optical characterizations. The optical properties of the quaternary chalcogenide nanocrystals were found to vary with the chemical composition of the material. - Highlights: • Solvothermal synthesis of CZTS, CZTSSe and CZTSe nanocrystals and discussion on possible formation mechanism. • Use of dodecanethiol/oleylamine mixture to synthesize phase-pure CZTSSe nanocrystals. • Formation of impurity phases can be controlled with proper S and Se sources.

  4. Glycolic acid physical properties and impurities assessment

    Energy Technology Data Exchange (ETDEWEB)

    Lambert, D. P. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Pickenheim, B. R. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Hay, M. S. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); BIBLER, N. E. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2017-08-09

    This document has been revised to add analytical data for fresh, 1 year old, and 4 year old glycolic acid as recommended in Revision 2 of this document. This was needed to understand the concentration of formaldehyde and methoxyacetic acid, impurities present in the glycolic acid used in Savannah River National Laboratory (SRNL) experiments. Based on this information, the concentration of these impurities did not change during storage. These impurities were in the glycolic acid used in the testing included in this report and in subsequent testing using DuPont (now called Chemours) supplied Technical Grade 70 wt% glycolic acid. However, these impurities were not reported in the first two versions of this report. The Defense Waste Processing Facility (DWPF) is planning to implement a nitric-glycolic acid flowsheets to increase attainment to meet closure commitment dates during Sludge Batch 9. In fiscal year 2009, SRNL was requested to determine the physical properties of formic and glycolic acid blends.

  5. On impurities transport in a tokamak

    International Nuclear Information System (INIS)

    Rozhanskij, V.A.

    1980-01-01

    Transport of impurity ions is analitically analized in the case when main plasma is in plateau or banana regimes but impurity ions - in the Pfirsch-Schlutter mode. It is shown that in the large region of parameters the impUrity transport represents a drift in a p oloidal electric field, averaged from magnetic surface with provision for disturbance of concentration on it. Therefore, transport velocity does not depend on Z value and impurity type, as well as collision frequency both in the plateau and banana regimes. A value of flows is determined by the value of poloidal rotation velocity. At the rotation velocity corresponding to the electric field directed from the centre to periphery impurities are thrown out of a discharge, in the reverse case the flow is directed inside. Refusal from the assumption that Zsub(eff) > approximately 2, does not considerably change the results of work. The approach developed in the process of work can be applied to the case when impurity ions are in the plateau or banana modes

  6. Impurity production and transport at limiters

    International Nuclear Information System (INIS)

    Matthews, G.F.

    1989-01-01

    This paper concentrates on the description and evaluation of experiments on the DITE tokamak. These are designed to characterise the processes involved in the production and transport of neutral and ionised impurities near carbon limiters. The need for good diagnostics in the scrape-off layer is highlighted. Langmuir probes are used to provide input data for models of impurity production at limiters. Observations of the radial profiles of carbon and oxygen impurities are compared with the code predictions. Changeover experiments involving hydrogen and helium plasmas are used as a means for investigating the role of the atomic physics and chemistry. The impurity control limiter (ICL) experiment is described which shows how geometry plays an important role in determining the spatial distributions of the neutral and ionised carbon. New diagnostics are required to study the flux and charge state distribution of impurities in the boundary. Preliminary results from an in-situ plasma ion mass-spectrometer are presented. The role of oxygen and the importance of evaluating the wall sources of impurity are emphasised. (orig.)

  7. Moessbauer spectroscopy of isotope separator implanted sup(119m)Sn in FCC metals

    International Nuclear Information System (INIS)

    Larsen, A.N.; Weyer, G.

    1979-01-01

    Radioactive sup(119m)Sn has been implanted in FCC metals by means of an isotope separator. Moessbauer spectra have been measured for the 24 keV transition of 119 Sn. Large substitutional fractions are found in all cases. A correlation for substitutional lattice sites between the measured isomer shifts of the impurity atoms and the force constants of the host lattices is discussed. Debye-Waller factors determined for substitutional Sn in the host lattices are found to be smaller than values calculated by a simple mass-defect model. For some host metals indications of an influence of radiation damage on the spectra are observed. Defect sites are assigned to Sn in aluminium and lead. Qualitative conclusions on the structures of these defects are drawn from the determined Moessbauer parameters. (author)

  8. Physical behaviors of impure atoms during relaxation of impure NiAl-based alloy grain boundary

    International Nuclear Information System (INIS)

    Zheng Liping; Jiang Bingyao; Liu Xianghuai; Li Douxing

    2003-01-01

    The Monte Carlo simulation with the energetics described by the embedded atom method has been employed to mainly study physical behaviors of boron atoms during relaxation of the Ni 3 Al-x at.% B grain boundary. During relaxation of impure Ni 3 Al grain boundaries, authors suggest that for different types of impure atoms (Mg, B, Cr and Zr atoms etc.), as the segregating species, they have the different behaviors, but as the inducing species, they have the same behaviors, i.e. they all induce Ni atoms to substitute Al atoms. Calculations show that at the equilibrium, when x(the B bulk concentration) increases from 0.1 to 0.9, the peak concentration of B increases, correspondently, the peak concentration of Ni maximizes but the valley concentration of Al minimizes, at x=0.5. The calculations also show the approximate saturation of Ni at the grain boundary at x=0.5

  9. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  10. Donor impurity-related linear and nonlinear optical absorption coefficients in GaAs/Ga{sub 1−x}Al{sub x}As concentric double quantum rings: Effects of geometry, hydrostatic pressure, and aluminum concentration

    Energy Technology Data Exchange (ETDEWEB)

    Baghramyan, H.M.; Barseghyan, M.G.; Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Al. Manookian 1, 0025 Yerevan (Armenia); Restrepo, R.L. [Física Teórica y Aplicada, Escuela de Ingeniería de Antioquia, AA 7516, Medellín (Colombia); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultadde Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21,Medellín (Colombia)

    2014-01-15

    The linear and nonlinear optical absorption associated with the transition between 1s and 2s states corresponding to the electron-donor-impurity complex in GaAs/Ga{sub 1−x}Al{sub x}As three-dimensional concentric double quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and the variation of the aluminum concentration, the energies of the ground and first excited s-like states of a donor impurity in such a system have been calculated using the effective mass approximation and a variational method. The energies of these states and the corresponding threshold energy of the optical transitions are examined as functions of hydrostatic pressure, aluminum concentration, radial impurity position, as well as the geometrical dimensions of the structure. The dependencies of the linear, nonlinear and total optical absorption coefficients as functions of the incident photon energy are investigated for different values of those mentioned parameters. It is found that the influences mentioned above lead to either redshifts or blueshifts of the resonant peaks of the optical absorption spectrum. It is particularly discussed the unusual property exhibited by the third-order nonlinear of becoming positive for photon energies below the resonant transition one. It is shown that this phenomenon is associated with the particular features of the system under study, which determine the values of the electric dipole moment matrix elements. -- Highlights: • Intra-band optical absorption associated to impurity states in double quantum rings. • Combined effects of hydrostatic pressure and aluminum concentration are studied. • The influences mentioned above lead to shifts of resonant peaks. • It is discussed an unusual property exhibited by the third-order nonlinear absorption.

  11. Spectrographic determination of trace impurities in reactor grade aluminium

    International Nuclear Information System (INIS)

    Chandola, L.C.; Machado, I.J.

    1975-01-01

    A spectrographic method enabling the determination of 21 trace impurities in aluminium oxide is described. The technique involves mixing the sample with graphite buffer in the ratio 1:1, loading it in a graphite electrode and arcing it for 30 sec. in a dc arc to 10 A current against a pointed graphite cathode. The spectra are photographed on Ilford N.30 emulsion employing a large quartz spectrograph. The aluminium line at 2669.2 A 0 serves as the internal standard. The impurities determined are Ag, B, Bi, Cd, Co, Cr, Cu, Fe, Ga, In, Mg, Mo, Ni, Pb, Sb, Si, Sn, Ti, V and Zn. The sensitivity varies from 5 to 100 ppm and the precision from +- 5 to +- 22% for different elements. A method for converting aluminium metal to aluminium oxide is described. It is found that boron is not lost during this conversion. (author)

  12. Nuclear relaxation in semiconductors doped with magnetic impurities

    International Nuclear Information System (INIS)

    Mel'nichuk, S.V.; Tovstyuk, N.K.

    1984-01-01

    The temperature and concentration dependences are investigated of the nuclear spin-lattice relaxation time with account of spin diffusion for degenerated and non-degenerated semicon- ductors doped with magnetic impurities. In case of the non-degenerated semiconductor the time is shown to grow with temperature, while in case of degenerated semiconductor it is practically independent of temperature. The impurity concentration growth results in decreasing the spin-lattice relaxation time

  13. External electric field effect on the binding energy of a hydrogenic donor impurity in InGaAsP/InP concentric double quantum rings

    Science.gov (United States)

    Hu, Min; Wang, Hailong; Gong, Qian; Wang, Shumin

    2018-04-01

    Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at zi ≥ 0 decreases while that located at zi < 0 increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.

  14. EUV impurity study of the Alcator tokamak

    International Nuclear Information System (INIS)

    Terry, J.L.; Chen, K.I.; Moos, H.W.; Marmar, E.S.

    1978-01-01

    The intensity of resonance line radiation from oxygen, nitrogen, carbon and molybdenum impurities has been measured in the high-field (80kG), high-density (6x10 14 cm -3 ) discharges of the Alcator Tokamak, using a 0.4-m normal-incidence monochromator (300-1300A) with its line of sight fixed along a major radius. Total light-impurity concentrations of a few tenths of a percent have been estimated by using both a simple model and a computer code which included Pfirsch-Schlueter impurity diffusion. The resulting values of Zsub(eff), including the contributions due to both the light impurities and molybdenum, were close to one. The power lost through the impurity line radiation from the lower ionization states accounted for approximately 10% of the total Ohmic input power at high densities. (author)

  15. Sodium sampling and impurities determination

    International Nuclear Information System (INIS)

    Docekal, J.; Kovar, C.; Stuchlik, S.

    1980-01-01

    Samples may be obtained from tubes in-built in the sodium facility and further processed or they are taken into crucibles, stored and processed later. Another sampling method is a method involving vacuum distillation of sodium, thus concentrating impurities. Oxygen is determined by malgamation, distillation or vanadium balance methods. Hydrogen is determined by the metal diaphragm extraction, direct extraction or amalgamation methods. Carbon is determined using dry techniques involving burning a sodium sample at 1100 degC or using wet techniques by dissolving the sample with an acid. Trace amounts of metal impurities are determined after dissolving sodium in ethanol. The trace metals are concentrated and sodium excess is removed. (M.S.)

  16. The influence of optical parameters on impurity determinations by IR spectroscopy

    International Nuclear Information System (INIS)

    Lombard, O.J.

    1985-01-01

    The important role of impurities in semiconductor materials is the subject of continuous research. The concentration of interstitial oxygen impurities in silicon are determined with the aid of infrared spectroscopy. The maximum absorption coefficient of the oxygen absorption peak, centered at 9,06 μm, is determined and the impurity concentration is then calculated using a calibration factor. This procedure was evaluated, paying particular attention to those optical parameters which may influence these impurity determinations. A thorough discussion of the theoretical and experimental aspects of infrared spectroscopy in general is followed by an overview of previous experimental work. This lead to some theoretical analysis regarding the influence of the index of refraction, the index of absorption and multiple reflections in the silicon wafer on impurity determinations. This lead to specific experimental investigations. The influence of the surface morphology of samples on impurity determinations was studied by determining the reflectance of silicon surfaces. It was established that the surface reflectance plays a role and that it must be taken into consideration for accurate impurity concentration determinations. The most accurate values for the absorption coefficient due to oxygen in silicon are calculated. This requires that the surface of the silicon wafers must be highly polished for the formula to be valid. Acceptable values for the absorption coefficient of damaged surfaces are obtained if the uncorrected formula is used. Experimental results may deviate as much as 32% from the real impurity concentration if the wrong formula is used to calculate the absorption coefficient of oxygen in silicon at 9,06 μm

  17. Analysis of Sulfidation Routes for Processing Weathered Ilmenite Concentrates Containing Impurities

    Science.gov (United States)

    Ahmad, Sazzad; Rhamdhani, M. Akbar; Pownceby, Mark I.; Bruckard, Warren J.

    Rutile is the preferred feedstock for producing high-grade TiO2 pigment but due to decreasing resources, alternative materials such as ilmenite is now used to produce a synthetic rutile (SR) feedstock. This requires removal of impurities (e.g. Fe, Mg, Mn) which, for a primary ilmenite is straightforward process. Processing of weathered ilmenite however, is complex, especially when chrome-bearing impurities are present since minor chromium downgrades the SR market value as it imparts color to the final TiO2 pigment, Chrome-bearing spinels are a problem in weathered ilmenites from the Murray Basin, Australia as their physical and chemical properties overlap with ilmenite making separation difficult. In this paper, different sulfidation process routes for weathered ilmenites are analyzed for their applicability to Murray Basin deposits as a mean of remove chrome spinel impurities. Thermodynamic and experimental studies indicated that selective sulfidation of chrome-bearing spinel can be achieved under controlled pO2 and pS2 processing conditions thereby making them amenable to separation.

  18. Features of accumulation of radiation defects in metal with impurity

    International Nuclear Information System (INIS)

    Iskakov, B.M.

    2002-01-01

    The processes of accumulation and annealing of radiation defects in solids are being studied for the last fifty years quite intensively. Many regularities of these processes are fixed, but there are more unsolved problems. The computer simulation is one of the effective tools in finding the mechanisms of accumulation and annealing of radiation defects in solids. The numerical solution of the system of the differential equations by means of computers describing kinetics of accumulation of radiation point defects in metals with impurity, has allowed to receive a number of new outcomes. It was revealed, that a determinative factor influential in concentration of point defects (vacancies and interstitial atoms), formed during an exposure of metal, is the correlation a speed of Frenkel twins recombination, the capture of defects by impurity atoms and absorption of defects by other drainage, for example by dislocations. If the speed of capture of interstitial atoms by impurity atoms for two - three order is lower than the recombination speed of Frenkel twins and on two - three order exceeds the speed of capture of vacancies by impurity atoms, the concentration of interstitial atoms within the first seconds of an exposure passes through a maximum, then quickly decreases in some times and after that starts slowly to grow. The change of concentration of interstitial atoms in an initial period of an exposure does not influence on the change of a vacancy concentration. Within the whole period of an exposure, during which the concentration of interstitial atoms achieves a maximum and then is reduced, the vacancy concentration is steadily enlarged. However subsequent sluggish rise of concentration of interstitial atoms during an exposure is followed by the decrease of the vacancy concentration. The most remarkable feature of the kinetics of accumulation of interstitial atoms in metals with impurity is the presence of two extremum on curve dependence of interstitial atoms on a

  19. The role of metallic impurities in oxide semiconductors: first-principles calculations and PAC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Errico, L.A.; Fabricius, G.; Renteria, M. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina)

    2004-08-01

    We report an ab-initio comparative study of the electric-field-gradient tensor (EFG) and structural relaxations introduced by acceptor (Cd) and donor (Ta) impurities when they replace cations in a series of binary oxides: TiO{sub 2}, SnO{sub 2}, and In{sub 2}O{sub 3}. Calculations were performed with the Full-Potential Linearized-Augmented Plane Waves method that allows us to treat the electronic structure and the atomic relaxations in a fully self-consistent way. We considered different charge states for each impurity and studied the dependence on these charge states of the electronic properties and the structural relaxations. Our results are compared with available data coming from PAC experiments and previous calculations, allowing us to obtain a new insight on the role that metal impurities play in oxide semiconductors. It is clear from our results that simple models can not describe the measured EFGs at impurities in oxides even approximately. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Stability and magnetic properties of SnSe monolayer doped by transition metal atom (Mn, Fe, and Co): a first-principles study

    Science.gov (United States)

    Tang, Chao; Li, Qinwen; Zhang, Chunxiao; He, Chaoyu; Li, Jin; Ouyang, Tao; Li, Hongxing; Zhong, Jianxin

    2018-06-01

    Two dimensional (2D) tin selenium (SnSe) is an intriguing material with desired thermal and electric properties in nanoelectronics. In this paper, we carry on a density functional theory study on the stability and dilute magnetism of the 3d TM (Mn, Fe, and Co) doped 2D SnSe. Both the adsorption and substitution are in consideration here. We find that all the defects are electrically active and the cation substitutional doping (TM@Sn) is energetically favorable. The TM@Sn prefers to act as accepters and exhibits high-spin state with nonzero magnetic moment. The magnetic moment is mainly contributed by the spin-polarized charge density of the TM impurities. The magnetism is determined by the arrangement of the TM-3d orbitals, which is the result of the crystal field splitting and spin exchange splitting under specific symmetry. The magnetic and electronic properties of the TM@Sn are effectively modulated by external electric field (Eext) and charge doping. The Eext shifts the TM impurities relative to the SnSe host and then modifies the crystal field splitting. In particular, the magnetic moment is sensitive to the Eext in the Fe@Sn because the Eext induces distinct structure transformation. Based on the formation energy, doping electrons is a viable way to modulate the magnetic moment of TM@Sn. Doping electrons shift the 3d states towards low energy level, which induces the occupation of more 3d states and then the reduction of magnetism. These results render SnSe monolayer a promising 2D material for applications in future spintronics.

  1. Study by nuclear techniques of the impurity-defect interaction in implanted metals

    International Nuclear Information System (INIS)

    Thome, Lionel.

    1978-01-01

    The properties of out equilibrium alloys formed by impurity implantation are strongly influenced by radiation damage created during implantation. This work presents a study, via hyperfine interaction and lattice location experiments, of the impurity-defect interaction in ion implanted metals. When the impurity and defect concentrations in the implanted layer are small, i.e. when impurities are uniformly recoil implanted in the whole crystal volume following a nuclear reaction (Aq In experiments), the impurity interacts with its own damage cascade. In this case, a vacancy is found to be trapped by a fraction of impurities during an athermal process. The value of this fraction does not seem to depend critically on impurity and host. When the impurity and defect concentrations are such that defect cascades interact, i.e. when impurities are implanted with an isotope separator (Fe Yb experiments), the observed impurity-vacancy (or vacancy cluster) interactions depend then strongly on the nature of impurity and host. An empirical relation, which indicates the importance of elastic effects, has been found between the proportion of impurities interacting with defects and the difference between impurity and host atom radii. At implantation temperature such that vacancies are mobile, the impurity-defect interaction depends essentially on vacancy migration. A model based on chemical kinetics has been developed to account for the variation with temperature of measured quantities [fr

  2. Study on the morphology of Pb-Sn eutectics

    International Nuclear Information System (INIS)

    Ambrozio Filho, F.; Gentile, E.F.

    1976-01-01

    The influence of factors such as rate of growth of the solid phase, thermal gradient in the liquid and presence of impurities on the solidification of eutectic structures is studied. To emphasize certain aspects of the basic concept, the technique of unidirectional cooling was used in a specially constructed apparatus. Micrographs of the structure obtained with the eutectic Pb-Sn alloy are shown and a purely qualitative analysis of the factors described is given [pt

  3. Effects of impurities on radiation damage in InP

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Ando, K.

    1986-01-01

    Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

  4. Fractal growth in impurity-controlled solidification in lipid monolayers

    DEFF Research Database (Denmark)

    Fogedby, Hans C.; Sørensen, Erik Schwartz; Mouritsen, Ole G.

    1987-01-01

    A simple two-dimensional microscopic model is proposed to describe solidifcation processes in systems with impurities which are miscible only in the fluid phase. Computer simulation of the model shows that the resulting solids are fractal over a wide range of impurity concentrations and impurity...... diffusional constants. A fractal-forming mechanism is suggested for impurity-controlled solidification which is consistent with recent experimental observations of fractal growth of solid phospholipid domains in monolayers. The Journal of Chemical Physics is copyrighted by The American Institute of Physics....

  5. Damping of elastic waves in crystals with impurities

    International Nuclear Information System (INIS)

    Lemanov, V.V.; Petrov, A.V.; Akhmedzhanov, F.R.; Nasyrov, A.N.

    1979-01-01

    Elastic wave damping and thermal conductivity of NaCl-NaBr and Y 3 AL 5 O 12 crystals with Er impurity has been examined. The experimental results on a decrease in elastic wave damping in such crystals are analyzed in the framework of the Ahiezer damping theory. The measurements were made in the frequency range of 300-1500 MHz in propagation of longitudinal and transverse elastic waves along the [100] and [110] directions. At 10 % concentration of erbium impurity the transverse wave damping decreases by a factor of three, and for longitudinal waves by a factor of two in NaBr:Cl crystals, and by approximately 10 and 30 % for NaBr:Cl and Y 3 Al 5 O 12 :Er crystals, respectively. In Y 3 Al 5 O 12 crystals, unlike NaCl-NaBr crystals, no noticeable anisotropy of damping is observed. The transVerse wave damping in impurity crystals has been shown to increase significantly with decreasing temperature and increasing the impurity concentration

  6. Electrical and optical properties of SnEuTe and SnSrTe films

    Science.gov (United States)

    Ishida, Akihiro; Tsuchiya, Takuro; Yamada, Tomohiro; Cao, Daoshe; Takaoka, Sadao; Rahim, Mohamed; Felder, Ferdinand; Zogg, Hans

    2010-06-01

    The SnTe, Sn1-xEuxTe and Sn1-xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm-3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1-xEuxTe and Sn1-xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

  7. Separation coefficients of liquid-vapor in systems formed by yttrium chloride with some impurities

    International Nuclear Information System (INIS)

    Volkov, V.T.; Nikiforova, T.V.; Nisel'son, L.A.; Telegin, G.F.

    1990-01-01

    Using equilibrium Rayleigh distillation in the 800-950 deg C temperature range, separation coefficients of liquid-vapor for systems, formed by yttrium chloride with Co, Cr, Ni, Mn, Fe, Cu, Na, K, Mg, Ca, Li impurities are determined. The impurity concentration lies within 0.02-0.4 mass. % limits of each impurity, and total impurity concentration does not exceed 1 mass. %. The tested impurities, except for calcium, are more volatile than the base, yttrium trichloride. In most systems negative deviation from the Raoult's law is observed

  8. Impurity effects of hydrogen isotope retention on boronized wall in LHD

    International Nuclear Information System (INIS)

    Oya, Yasuhisa; Okuno, Kenji; Ashikawa, Naoko; Nishimura, Kiyohiko; Sagara, Akio

    2010-11-01

    The impurity effect on hydrogen isotopes retention in the boron film deposited in LHD was evaluated by means of XPS and TDS. It was found that the impurity concentrations in boron film were increased after H-H main plasma exposure in LHD. The ratio of hydrogen retention trapped by impurity to total hydrogen retention during H-H main plasma exposure was reached to 70%, although that of deuterium retention by impurity in D 2 + implanted LHD-boron film was about 35%. In addition, the dynamic chemical sputtering of hydrogen isotopes with impurity as the form of water and / or hydrocarbons was occurred by energetic hydrogen isotopes irradiation. It was expected that the enhancement of impurity concentration during plasma exposure in LHD would induce the dynamic formation of volatile molecules and their re-emission to plasma. These facts would prevent stable plasma operation in LHD, concluding that the dynamic impurity behavior in boron film during plasma exposure is one of key issues for the steady-state plasma operation in LHD. (author)

  9. Impurity binding energy for δ-doped quantum well structures

    Indian Academy of Sciences (India)

    Administrator

    Calculations are made for the case of not so big impurity concentrations, when impurity bands are not .... Blom et al (2003), but our data correspond qualitatively to Bastard's .... 0113U000612 and by Ukrainian Ministry of Education and Science ...

  10. Collective impurity effects in the Heisenberg triangular antiferromagnet

    International Nuclear Information System (INIS)

    Maryasin, V S; Zhitomirsky, M E

    2015-01-01

    We theoretically investigate the Heisenberg antiferromagnet on a triangular lattice doped with nonmagnetic impurities. Two nontrivial effects resulting from collective impurity behavior are predicted. The first one is related to presence of uncompensated magnetic moments localized near vacancies as revealed by the low-temperature Curie tail in the magnetic susceptibility. These moments exhibit an anomalous growth with the impurity concentration, which we attribute to the clustering mechanism. In an external magnetic field, impurities lead to an even more peculiar phenomenon lifting the classical ground-state degeneracy in favor of the conical state. We analytically demonstrate that vacancies spontaneously generate a positive biquadratic exchange, which is responsible for the above degeneracy lifting

  11. Gas chromatographic determination of impurities of inorganic compounds

    International Nuclear Information System (INIS)

    Drugov, Yu.S.

    1985-01-01

    Methods of concentration, separation, detection in gas chromatographic determination of impurities of inorganic compounds including low-boiling gases, reactive gases, organometallic compounds, free metals, anions, etc. are reviewed. Methods of reaction gas chromatography for determining reactive gases, water, anions, metal chelates are considered in detail as well as methods of reaction-sorption concentration and reaction gas extraction. The application of gas chromatograpny ior anaiysis of water and atmosphere contamination, for determination of impurities in highly pure solid substances and gases is described

  12. Performance and selectivity of PtxSn/C electro-catalysts for ethanol oxidation prepared by reduction with different formic acid concentrations

    International Nuclear Information System (INIS)

    Zignani, Sabrina C.; Baglio, Vincenzo; Linares, José J.; Monforte, Giuseppe; Gonzalez, Ernesto R.; Aricò, Antonino S.

    2012-01-01

    Carbon supported Pt–Sn catalysts were prepared by reduction of Pt and Sn precursors with formic acid and characterized in terms of structure, morphology and surface properties. The electrocatalytic activity for ethanol oxidation was studied in a direct ethanol fuel cell (DEFC) at 70 °C and 90 °C. Electrochemical and physico-chemical data indicated that a proper balance of Pt and Sn species in the near surface region was necessary to maximize the reaction rate. The best atomic surface composition, in terms of electrochemical performance, was Pt:Sn 65:35 corresponding to a bulk composition 75:25 namely Pt 3 Sn 1 /C. The reaction products of ethanol electro-oxidation in single cell and their distribution as a function of the nature of catalyst were determined. Essentially, acetaldehyde and acetic acid were detected as the main reaction products; whereas, a lower content of CO 2 was formed. The selectivity toward acetic acid vs. acetaldehyde increased with the increase of the Sn content and decreased by decreasing the concentration of the reducing agent used in the catalyst preparation. According to the recent literature, these results have been interpreted on the basis of ethanol adsorption characteristics and ligand effects occurring for Sn-rich electrocatalysts.

  13. Low Z impurity transport in tokamaks. [Neoclassical transport theory

    Energy Technology Data Exchange (ETDEWEB)

    Hawryluk, R.J.; Suckewer, S.; Hirshman, S.P.

    1978-10-01

    Low Z impurity transport in tokamaks was simulated with a one-dimensional impurity transport model including both neoclassical and anomalous transport. The neoclassical fluxes are due to collisions between the background plasma and impurity ions as well as collisions between the various ionization states. The evaluation of the neoclassical fluxes takes into account the different collisionality regimes of the background plasma and the impurity ions. A limiter scrapeoff model is used to define the boundary conditions for the impurity ions in the plasma periphery. In order to account for the spectroscopic measurements of power radiated by the lower ionization states, fluxes due to anomalous transport are included. The sensitivity of the results to uncertainties in rate coefficients and plasma parameters in the periphery are investigated. The implications of the transport model for spectroscopic evaluation of impurity concentrations, impurity fluxes, and radiated power from line emission measurements are discussed.

  14. Interactions of impurities with a moving grain boundary

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, C L [Carnegie-Mellon Univ., Pittsburgh, Pa. (USA)

    1975-01-01

    Most theories developed to explain interaction of impurities with a moving grain boundary involve a uniform excess impurity concentration distributed along a planar grain boundary. As boundary velocity increases, the excess impurities exert a net drag force on the boundary until a level is reached whereat the drag force no longer can balance the driving force and breakaway of the boundary from these impurities occurs. In this investigation, assumptions of a uniform lateral impurity profile and a planar grain boundary shape are relaxed by allowing both forward and lateral diffusion of impurities in the vicinity of a grain boundary. It is found that the two usual regions (drag of impurities by, and breakaway of a planar grain boundary) are separated by an extensive region wherein a uniform lateral impurity profile and a planar grain boundary shape are unstable. It is suspected that, in this unstable region, grain boundaries assume a spectrum of more complex morphologies and that elucidation of these morphologies can provide the first definitive description of the breakaway process and insight to more complex phenomena such as solid-solution strengthening, grain growth and secondary recrystallization.

  15. Variational method for magnetic impurities in metals: impurity pairs

    Energy Technology Data Exchange (ETDEWEB)

    Oles, A M [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.); Chao, K A [Linkoeping Univ. (Sweden). Dept. of Physics and Measurement Technology

    1980-01-01

    Applying a variational method to the generalized Wolff model, we have investigated the effect of impurity-impurity interaction on the formation of local moments in the ground state. The direct coupling between the impurities is found to be more important than the interaction between the impurities and the host conduction electrons, as far as the formation of local moments is concerned. Under certain conditions we also observe different valences on different impurities.

  16. Change in detector properties caused by electronegative impurities

    International Nuclear Information System (INIS)

    Deptuch, M.; Kowalski, T.Z.; Mindur, B.

    2006-01-01

    Detector properties (energy resolution, gas gain, drift-time measurements) depend quite critically on the concentration of impurities. The most frequent impurities in the working gas are water vapour and oxygen. Systematic measurements of the detector properties as a function of both H 2 O vapour and O 2 concentration have been made. Ar/CO 2 (80/20) and Ar/CO 2 /CF 4 (70/10/20) have been selected as the working gases. The first mixture is commonly used, the second one is very promising due to its fastness. The concentration of H 2 O vapour and O 2 was varied from 0% to 1.9% and 3%, respectively

  17. Spectrographic determination of impurities in enriched uranium solutions

    International Nuclear Information System (INIS)

    Capdevila, C.; Roca, M.

    1980-01-01

    A spectrographic procedure for the determination of trace amounts of Al, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Fe, K, L i , Hg, Mn, Mo, Na, Nb, Ni, P, Pb, Ru, Sb, Sn, Sr, Ti, V, Zn, and Zr in enriched uranyl nitrate solutions from the reprocessing of spent nuclear fuels is described. After removal of uranium by either TBP or TNOA solvent extraction, the aqueous phase Is analysed by the graphite spark technique. TBP is adequate for all impurities, excepting boron and phosphorus; both of these elements can sat is factory be determined by using TNOA after the addition of mannitol to avoid boron losses. (Author) 4 refs

  18. Impurity effects on ionic-liquid-based supercapacitors

    International Nuclear Information System (INIS)

    Liu, Kun; Lian, Cheng; Henderson, Douglas; Wu, Jianzhong

    2016-01-01

    Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface of a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. As a result, by comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.

  19. Impurity effects on ionic-liquid-based supercapacitors

    Science.gov (United States)

    Liu, Kun; Lian, Cheng; Henderson, Douglas; Wu, Jianzhong

    2017-02-01

    Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface of a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. By comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.

  20. Effect of light impurities on the early stage of swelling in austenitic stainless steel

    International Nuclear Information System (INIS)

    Igata, N.

    1998-01-01

    The objective of this study is to analyse the early stage of swelling and clarify the role of light impurities (nitrogen) in swelling of austenitic stainless steel. Recent results show that light impurities affect the swelling of 316 stainless steel under HVEM irradiation up to 10 dpa. At low concentration of light impurities the radiation swelling increases then decreases through the maximum as the concentration of light impurities increases. In the present paper the theoretical model is presented for the explanation of this effect. The model is based on the two factors: the influence of absorbed impurities on the voids caused by the production of an additional gas pressure in voids for their stabilization and the effect of impurities segregated around the surface of voids by the lowering of surface tension. These two affects are taken into account in the calculations of the critical size and the growth rate of cavities. The theoretical predictions on the radiation swelling rate dependent on the impurity concentration and temperature coincided with the experimental results on 316 stainless steel irradiated by HVEM. (orig.)

  1. Impurity transport in internal transport barrier discharges on JET

    International Nuclear Information System (INIS)

    Dux, R.

    2002-01-01

    In JET plasmas with internal transport barrier (ITB) the behaviour of metallic and low-Z impurities (C, Ne) was investigated. In ITB discharges with reversed shear, the metallic impurities accumulate in cases with too strong peaking of the density profile, while the concentration of low-Z elements C and Ne is only mildly peaked. The accumulation might be so strong, that the central radiation approximately equals the central heating power followed by a radiative collapse of the transport barrier. The radial location with strong impurity gradients (convective barrier) was identified to be situated inside (not at!) the heat flux barrier. Calculations of neo-classical transport were performed for these discharges, including impurity-impurity collisions. It was found, that the observed Z-dependence of the impurity peaking and the location of the impurity 'barrier' can be explained with neo-classical transport. ITB discharges with monotonic shear show less inward convection and seem to be advantageous with respect to plasma purity. (author)

  2. Helium impurities in a PNP-primary coolant circuit

    International Nuclear Information System (INIS)

    Reif, M.

    1981-01-01

    The concentration of impurities to be expected have been defined in consideration of recent findings concerning the rates of infiltration and formation and the reaction mechanisms of the impurity components in the circuit. The data obtained correspond with the requirements on the metallic high-temperature components as well as with the requirements of limited graphite corrosion. (DG) [de

  3. Achieving improved ohmic confinement via impurity injection

    International Nuclear Information System (INIS)

    Bessenrodt-Weberpals, M.; Soeldner, F.X.

    1991-01-01

    Improved Ohmic Confinement (IOC) was obtained in ASDEX after a modification of the divertors that allowed a larger (deuterium and impurity) backflow from the divertor chamber. The quality of IOC depended crucially on the wall conditions, i.e. IOC was best for uncovered stainless steels walls and vanished with boronization. Furthermore, IOC was found only in deuterium discharges. These circumstances led to the idea that IOC correlates with the content of light impurities in the plasma. To substantiate this working hypothesis, we present observations in deuterium discharges with boronized wall conditions into which various impurities have been injected with the aim to induce IOC conditions. Firstly, the plasma behaviour in typical IOC discharges is characterized. Secondly, injection experiments with the low-Z impurities nitrogen and neon as well as with the high-Z impurities argon and krypton are discussed. Then, we concentrate on optimized neon puffing that yields the best confinement results which are similar to IOC conditions. Finally, these results are compared with eperiments in other tokamaks and some conclusions are drawn about the effects of the impurity puffing on both, the central and the edge plasma behaviour. (orig.)

  4. THE EFFICIENCY OF IMPURITIES EXTRACTION DURING THE PROCESS OF ETHANOL EPURATION

    Directory of Open Access Journals (Sweden)

    S. Yu. Nikitina

    2015-01-01

    Full Text Available The static model of the hydroselection column that describes the concentration variation of the main components was proposed. The purpose of this work is an optimization of the shared mixture input-position and evaluation of efficiency of the digestion and the impurity compound concentration during the epuration process. To this end, the author developed a static model of epuration columns, which allows to reveal the dependence of the degree of digestion and the degree of concentration of the main impurities in the column of the number of plates in each of these parts. It’s proved that with the increasing of theoretical plates number in the concentration part of the column the concentration effect tends to the limit value. The effects of the head impurities digestion increase indefinitely with the growth of exhausting part. The proportion of the output from the condenser impurities depends more from the digestion effect than from the condensation effect. The effect of alcohol cleaning from the fusel oil components depends strongly from the ratio of the number of plates in the digestion and concentration parts (the optimal ratio for isopropanol, isoamyl, butanol is 1.5, for the propanol, isobutanol is 0.45.

  5. Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Transistors

    International Nuclear Information System (INIS)

    Chen Zuhui; Jie Binbin; Sah Chihtang

    2010-01-01

    Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 /Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range. (invited papers)

  6. Capture of impurity atoms by defects and the distribution of the complexes under ion bormbardment of growing films

    International Nuclear Information System (INIS)

    Radzhabov, T.D.; Iskanderova, Z.A.; Arutyunova, E.O.; Samigulin, K.R.

    1982-01-01

    Theoretical study of capture of impurity gas atoms with defects during ion introduction of the impurity in the process of film growth with simultaneous diffusion has been carried out. Concentration profiles of forned impurity-defect complexes have been calculated analytically and numerically by means of a computer in film depth and in a substrate; basic peculiarities of impurity component formation captured with defects in a wide range of changing basic experimental parameters have been revealed. Effect of impurity capture with defects on amount and distribution of total concentration of impurity atoms and intensity of complete absorption of bombarding ions in films have been analyzed. Shown is a possibility for producing films with a high concentration level and almost uniform distribution of the impurity-defect complexes for real, achievable an experiment, values of process parameters as well as a possibility for increasing complete absorption of gaseous impurity wiht concentration growth of capture defects-traps

  7. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  8. Impurity concentration behaviors in a boiling tubesheet crevice Part II. Packed crevice

    International Nuclear Information System (INIS)

    Bahn, Chi Bum; Oh, Si Hyoung; Park, Byung Gi; Hwang, Il Soon; Rhee, In Hyoung; Kim, Uh Chul; Na, Jung Won

    2003-01-01

    The impurity concentration behavior of a boiling crevice packed with magnetite particles was investigated with thermocouples and electrodes for the measurement of temperature and electrochemical corrosion potential (ECP), respectively, in order to understand chemical change in a pressurized water reactor (PWR) steam generator (SG) crevice. A secondary solution composed of 50 ppm Na and 200 ppb hydrogen was supplied at a flow rate of about 4 l/h. Sodium hydroxide (NaOH) concentration process in the crevice and the resultant boiling point elevation behavior were characterized with temperature and ECP data. The temperature in the packed crevice was about 2-3 deg. C higher than that for the open crevice. In the same conditions, the magnetite-packed crevice showed a greater amount of boiling point elevation with a longer time to reach a steady state compared with the case of an open crevice. It was found that the bottom region of the crevice was initially filled with steam, and then the concentrated liquid region initially located at the middle of crevice expanded to both the crevice bottom and the upper region. To analytically estimate the wetted length, a closed form model was introduced. The model results estimated the initial wetted length shorter as compared with the measurement results. Measured ECP results of packed crevice showed similar behaviors as compared with calculated results by using Nernst equation. ECP results reasonably coincided with the boiling point elevation estimated from the temperature data except one unusual case

  9. Systematic study of hyperfine fields in Rh2 Y Z type Heusler alloys with 119 Sn impurity using Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Ramos, S.M.M.

    1985-01-01

    The magnetic hyperfine fields in the Heusler alloys Rh 2 Mn .98 Ge Sn 02 , Rh 2 Mn Ge .98 Sn .02 , Rh 2 Mn Pb .98 Sn .02 and Rh 2 Mn Sn has been studied by 119 Sn Moessbauer spectroscopy at 293 K, 77 K, 4.2 K and 293 K with applied external magnetic field. The results show that when one compare the magnetic hyperfine fields systematic with the Heusler alloys X 2 Mn Z (X = Co, Ni, Cu, Pd, and Z = s p metal), this systematic is similar to the Co alloys, although can not explained by the currents models for the Heusler alloys. (author)

  10. Effective Kα x-ray excitation rates for plasma impurity measurements

    International Nuclear Information System (INIS)

    Hill, K.W.; Bitter, M.; von Goeler, S.; Hiroe, S.; Hulse, R.; Ramsey, A.T.; Sesnic, S.; Shimada, M.; Stratton, B.C.

    1986-06-01

    Metal impurity concentrations are measured by the Pulse-Height-Analyzer (PHA) diagnostic from Kα x-ray peak intensities by use of an averaged excitation rate . Low-Z impurity concentrations are inferred from the continuum enhancement (relative to a pure plasma) minus the enhancement due to metals. Since the PHA does not resolve lines from different charge states, is a weighted sum of rates; coronal equilibrium is usually assumed. The used earlier omitted the intercombination and forbidden lines from the dominant helium-like state. The result was an overestimate of metals and an underestimate of low-Z impurities in cases where metals were significant. Improved values of using recent calculations for H-, He-, and Li-like Fe range from 10 to 50% larger than the earlier rates and yield metal concentrations in better agreement with those from VUV spectroscopy

  11. Multielemental segregation analysis of the thallium bromide impurities purified by repeated Bridgman technique

    International Nuclear Information System (INIS)

    Santos, Robinson A. dos; Hamada, Margarida M.; Costa, Fabio E. da; Gennari, Roseli F.; Martins, Joao F.T.; Marcondes, Renata M.; Mesquita, Carlos H. de

    2011-01-01

    TlBr crystals were purified and grown by the repeated Bridgman method from two commercial TlBr salts and characterized to be used as radiation detectors. To evaluate the purification efficiency, measurements of the impurity concentration were made after each growth, analyzing the trace impurities by inductively coupled plasma mass spectroscopy (ICP-MS). A significant decrease of the impurity concentration resulting from the purification number was observed. To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out. The radiation response depended on the crystal purity. The repeated Bridgman technique improved the TlBr crystal quality used as a radiation detector. A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growth. (author)

  12. Phase controlled solvothermal synthesis of Cu{sub 2}ZnSnS{sub 4}, Cu{sub 2}ZnSn(S,Se){sub 4} and Cu{sub 2}ZnSnSe{sub 4} Nanocrystals: The effect of Se and S sources on phase purity

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Mou [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, 62580 Temixco, Morelos (Mexico); Instituto de Física, BUAP, Av. San Claudio y Blvd. 18 Sur Col. San Manuel, Ciudad Universitaria, C.P. 72570, Puebla (Mexico); Mathews, N.R. [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, 62580 Temixco, Morelos (Mexico); Paraguay-Delgado, F. [Departamento de Materiales Nanoestructurados, Centro de Investigación en Materiales Avanzados (CIMAV), Chihuahua (Mexico); Mathew, X., E-mail: xm@ier.unam.mx [Instituto de Energías Renovables, Universidad Nacional Autónoma de México, 62580 Temixco, Morelos (Mexico)

    2015-09-15

    In this study, we have reported the synthesis of Cu{sub 2}ZnSnSe{sub 4} (CZTSe), Cu{sub 2}ZnSnS{sub 4} (CZTS) and Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) nanocrystals with tunable band gap and composition obtained by solvothermal method. The crystalline structure, composition, morphology and optical properties of the nanoparticles were characterized by X-ray diffraction (XRD), Raman scattering, energy dispersive X-ray spectroscopy, transmission electron microscopy and diffuse reflectance (DR) spectroscopy. While the XRD patterns of CZTS and CZTSe nanoparticles prepared with elemental S/Se powder revealed the presence of phase pure nanoparticles, the CZTSSe nanoparticles obtained using a mixture of S and Se, were found to contain many secondary phases under the same synthesis protocol. Formation of impurity phases in CZTSSe sample, can be avoided by using a mixture of 1-dodecanethiol (DT; CH{sub 3}(CH{sub 2}){sub 11}SH)/oleylamine (OLA) instead of S powder and following the same experimental procedure. The incorporation of S in CZTSe nanocrystals prepared in presence of DDT/OLA mixture was confirmed through structural and optical characterizations. The optical properties of the quaternary chalcogenide nanocrystals were found to vary with the chemical composition of the material. - Highlights: • Solvothermal synthesis of CZTS, CZTSSe and CZTSe nanocrystals and discussion on possible formation mechanism. • Use of dodecanethiol/oleylamine mixture to synthesize phase-pure CZTSSe nanocrystals. • Formation of impurity phases can be controlled with proper S and Se sources.

  13. Superconductivity, carrier concentration, and the ionic model of Sn/sub 4/P/sub 3/ and Sn/sub 4/As/sub 3/

    Energy Technology Data Exchange (ETDEWEB)

    Van Maaren, M H

    1969-06-01

    Superconductivity is reported for Sn/sub 4/P/sub 2.65/ at T/sub c/ 1.2/sup 0/K. Hall constant and reflectivity measurements indicate a mixed type of conduction for Sn/sub 4/P/sub 2.65/ and Sn/sub 3.80/ As/sub 3/. The ionic model of Geller and Hull is not applicable.

  14. Control Strategy for Small Molecule Impurities in Antibody-Drug Conjugates.

    Science.gov (United States)

    Gong, Hai H; Ihle, Nathan; Jones, Michael T; Kelly, Kathleen; Kott, Laila; Raglione, Thomas; Whitlock, Scott; Zhang, Qunying; Zheng, Jie

    2018-04-01

    Antibody-drug conjugates (ADCs) are an emerging class of biopharmaceuticals. As such, there are no specific guidelines addressing impurity limits and qualification requirements. The current ICH guidelines on impurities, Q3A (Impurities in New Drug Substances), Q3B (Impurities in New Drug Products), and Q6B (Specifications: Test Procedures and Acceptance Criteria for Biotechnological/Biological Products) do not adequately address how to assess small molecule impurities in ADCs. The International Consortium for Innovation and Quality in Pharmaceutical Development (IQ) formed an impurities working group (IWG) to discuss this issue. This white paper presents a strategy for evaluating the impact of small molecule impurities in ADCs. This strategy suggests a science-based approach that can be applied to the design of control systems for ADC therapeutics. The key principles that form the basis for this strategy include the significant difference in molecular weights between small molecule impurities and the ADC, the conjugation potential of the small molecule impurities, and the typical dosing concentrations and dosing schedule. The result is that exposure to small impurities in ADCs is so low as to often pose little or no significant safety risk.

  15. The origin of metal impurities in DIVA

    International Nuclear Information System (INIS)

    Ohasa, Kazumi; Sengoku, Seio; Maeda, Hikosuke; Ohtsuka, Hideo; Yamamoto, Shin

    1978-10-01

    The origin of metal impurities in DIVA (JFT-2a Tokamak) has been studied experimentally. Three processes of metal impurity release from the first wall were identified; i.e. ion sputtering, evaporation, and arcing. Among of these, ion sputtering is the predominant process in the quiet phase of the discharge, which is characterized by no spikes in the loop voltage and no localized heat flux concentrations on the first wall. ''Cones'' formation due to the sputtering is observed on the gold protection plate (guard limiter) exposed to about 10,000 discharges by scanning electron micrograph. In the SEM photographs, the spacial distribution of cones on the shell surface due to the ion sputtering coincides with the spacial distribution of intensity of Au-I line radiation. Gold is the dominant metal impurity in DIVA. The honeycomb structure can decrease release of the metal impurity. (author)

  16. Impurity states in two - and three-dimensional disordered systems

    International Nuclear Information System (INIS)

    Silva, A.F. da; Fabbri, M.

    1984-01-01

    We investigate the microscopic structure of the impurity states in two-and three-dimensional (2D and 3d) disordered systems. A cluster model is outlined for the donor impurity density of states (DIDS) of doped semiconductors. It is shown that the impurity states are very sensitive to a change in the dimensionality of the system, i.e from 3D to 2D system. It is found that all eigenstates become localized in 2D disordered system for a large range of concentration. (Author) [pt

  17. Impurity states in two-and three-dimensional disordered systems

    International Nuclear Information System (INIS)

    Silva, A.F. da; Fabbri, M.

    1984-04-01

    The microscopic structure of the impurity states in two-and three-dimensional (2D and 3D) disordered systems is investigated. A cluster model is outlined for the donor impurity density of states (DIDS) of doped semiconductors. It is shown that the impurity states are very sensitive to a change in the dimensionality of the system, i.e., from 3D to 2D system. It is found that all eigenstates become localized in 2D disordered system for a large range of concentration. (Author) [pt

  18. Defect-impurity interactions in irradiated germanium

    International Nuclear Information System (INIS)

    Cleland, J.W.; James, F.J.; Westbrook, R.D.

    1975-07-01

    Results of experiments are used to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and less than or equal to 10 15 to greater than or equal to 10 17 oxygen cm -3 was added to the furnace chamber after approximately 1 / 3 of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77 0 K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 μ) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300 0 K with 60 Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy--oxygen, lithium--oxygen, and lithium--vacancy interactions. (U.S.)

  19. Incorporation, diffusion and segregation of impurities in polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Deville, J.P.; Soltani, M.L. (Universite Louis Pasteur, 67 - Strasbourg (France)); Quesada, J. (Laboratoire de Metallurgie-Chimie des Materiaux, E.N.S.A.I.S., 67 - Strasbourg (France))

    1982-01-01

    We studied by means of X-Ray photoelectron Spectroscopy the nature, distribution and, when possible, the chemical bond of impurities at the surface of polycrystalline silicon samples grown on a carbon ribbon. Besides main impurities (carbon and oxygen), always present at concentrations around their limit of solubility in silicon, metal impurities have been found: their nature varies from one sample to another. Their spatial distribution is not random: some are strictly confined at the surface (sodium), whereas others are in the superficial oxidized layer (calcium, magnesium) or localized at the oxide-bulk silicon interface (iron). Metal impurities are coming from the carbon ribbon and are incorporated to silicon during the growth process. It is not yet possible to give a model of diffusion processes of impurities since they are too numerous and interact one with the other. However oxygen seems to play a leading role in the spatial distribution of metal impurities.

  20. Structural, optical and dielectric properties of Sn0.97Ce0.03O2 nanostructures

    Science.gov (United States)

    Ahmed, Ateeq; Siddique, M. Naseem; Ali, Tinku; Tripathi, P.

    2018-05-01

    In present work, 3% cerium doped SnO2 (Sn0.97Ce0.03O2) nanoparticles (NPs) have been synthesized by sol-gel method. The prepared sample has been characterized by using various techniques such as XRD, UV-visible absorption spectroscopy and LCR meter measurements. Structural Rietveld refinement of XRD data reveals that (Sn0.97Ce0.03O2) sample has a pure single phase tetragonal structure with space group (P42/mnm) without creating any impurity phase such as cerium oxide. UV-visible spectroscopy determines band gap value 3.47 eV for (Sn0.97Ce0.03O2) NPs using Tauc's relation. Dielectric constant and loss decreased with increase in frequency while ac conductivity was found to increase with increase in frequency. The observed dielectric results has been explained in the light of Maxwell-Wagner model.

  1. Spectroscopic study of sources and control of impurities in TMX-U. Revision 1

    International Nuclear Information System (INIS)

    Yu, T.L.; Allen, S.L.; Moos, H.W.

    1984-11-01

    Two absolutely calibrated euv instruments have been used to study the impurity characteristics in the Tandem Mirror Experiment-Upgrade (TMX-U). One instrument is a spectrograph that measures the time histories of several impurity emission lines in a single plasma shot. The other instrument is a monochromator that measures time-resolved radial profiles of a particular impurity emission line. The common intrinsic impurities found in TMX-U are C, N, O, and Ti. It has been shown that a large fraction of oxygen and nitrogen in the plasma is associated with the neutral beams. The plasma wall is the main source of carbon. In general, the concentration of each of the impurities is low (<1%), and the power radiated by them is less than 10 kW, which is a small portion of the total input power to the plasma. The concentrations of the impurities can be reduced substantially by glow discharge cleaning and titanium gettering

  2. Donor-impurity related photoionization cross section in GaAs/Ga{sub 1−x}Al{sub x}As concentric double quantum rings: Effects of geometry and hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Baghramyan, H.M. [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Barseghyan, M.G., E-mail: mbarsegh@ysu.am [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Kirakosyan, A.A. [Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan (Armenia); Laroze, D. [Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica (Chile); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

    2014-09-15

    The donor-impurity related photoionization cross section in GaAs/Ga{sub 1−x}Al{sub x}As three-dimensional concentric double quantum rings is investigated. The photoionization cross section dependence on the incident photon energy is studied considering the effects of hydrostatic pressure, variations of aluminum concentration, geometries of the structure, and impurity position. The interpretation of the dipole matrix element, which reflects the photoionization probability, is also given. We have found that these parameters can lead to both redshift and blueshift of the photoionization spectrum and also influence the cross section peak value.

  3. The impact of impurities on long-term PEMFC performance

    Energy Technology Data Exchange (ETDEWEB)

    Garzon, Fernando H [Los Alamos National Laboratory; Lopes, Thiago [Los Alamos National Laboratory; Rockward, Tommy [Los Alamos National Laboratory; Mukundan, Rangachary [Los Alamos National Laboratory; Sansinena, Jose - Maria [Los Alamos National Laboratory; Kienitz, Brian [LLNL

    2009-06-23

    Electrochemical experimentation and modeling indicates that impurities degrade fuel cell performance by a variety of mechanisms. Electrokinetics may be inhibited by catalytic site poisoning from sulfur compounds and CO and by decreased local proton activity and mobility caused by the presence of foreign salt cations or ammonia. Cation impurity profiles vary with current density, valence and may change local conductivity and water concentrations in the ionomer. Nitrogen oxides and ammonia species may be electrochemically active under fuel cell operating conditions. The primary impurity removal mechanisms are electrooxidation and water fluxes through the fuel cell.

  4. Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

    Science.gov (United States)

    Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

    2016-12-01

    Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

  5. Evaluation of surface energy state distribution and bulk defect concentration in DSSC photoanodes based on Sn, Fe, and Cu doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Ekanayake, Piyaisiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research -A*STAR, 3 Research Link, 117602 (Singapore); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Locked Bag 4, Maroochydore DC, Queensland, 4558 (Australia); Hobley, Jonathan [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Chellappan, Vijila [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Gorelik, Sergey; Subramanian, Gomathy Sandhya [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Lim, Chee Ming [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam)

    2015-10-01

    Graphical abstract: - Highlights: • The structural, optical and optoelectronic properties of 1 mol.% Fe, Sn and Cu doped TiO{sub 2} have been compared. • Transient lifetimes for pure TiO{sub 2} and Sn doped TiO{sub 2} were considerably shorter than Fe and Cu doped TiO{sub 2}. • A good correlation between the bulk defects and transient decay for the doped TiO{sub 2} powders was observed. • Photon to current conversion efficiency of DSSC based on the metal doped TiO{sub 2} were in order Sn-TiO{sub 2} > Cu-TiO{sub 2} > Pure >> Fe-TiO{sub 2}. • DSSC based on Fe doped photoanodes is limited by a high concentration of surface free holes observed at 433 nm. - Abstract: Electron transfer dynamics in the oxide layers of the working electrodes in both dye-sensitized solar cells and photocatalysts greatly influences their performance. A proper understanding of the distribution of surface and bulk energy states on/in these oxide layers can provide insights into the associated electron transfer processes. Metal ions like Iron (Fe), Copper (Cu) and Tin (Sn) doped onto TiO{sub 2} have shown enhanced photoactivity in these processes. In this work, the structural, optical and transient properties of Fe, Cu and Sn doped TiO{sub 2} nanocrystalline powders have been investigated and compared using EDX, Raman spectroscopy, X-ray Photoelectron spectroscopy (XPS), and Transient Absorption spectroscopy (TAS). Surface free energy states distributions were probed using Electrochemical Impedance spectroscopy (EIS) on Dye Sensitized Solar Cells (DSSC) based on the doped TiO{sub 2} photoanodes. Raman and XPS Ti2p{sub 3/2} peak shifts and broadening showed that the concentration of defects were in the order: Cu doped TiO{sub 2} > Fe doped TiO{sub 2} > Sn doped TiO{sub 2} > pure TiO{sub 2}. Nanosecond laser flash photolysis of Fe and Cu doped TiO{sub 2} indicated slower transient decay kinetics than that of Sn doped TiO{sub 2} or pure TiO{sub 2}. A broad absorption peak and fast

  6. Negative compressibility observed in graphene containing resonant impurities

    International Nuclear Information System (INIS)

    Chen, X. L.; Wang, L.; Li, W.; Wang, Y.; He, Y. H.; Wu, Z. F.; Han, Y.; Zhang, M. W.; Xiong, W.; Wang, N.

    2013-01-01

    We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ±0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

  7. A model of magnetic impurities within the Josephson junction of a phase qubit

    Energy Technology Data Exchange (ETDEWEB)

    Erickson, R P; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2010-02-15

    We consider a superconducting phase qubit consisting of a monocrystalline sapphire Josephson junction with its symmetry axis perpendicular to the junction interfaces. Via the London gauge, we present a theoretical model of Fe{sup 3+} magnetic impurities within the junction that describes the effect of a low concentration of such impurities on the operation of the qubit. Specifically, we derive an interaction Hamiltonian expressed in terms of angular momentum states of magnetic impurities and low-lying oscillator states of a current-biased phase qubit. We discuss the coupling between the qubit and impurities within the model near resonance. When the junction is biased at an optimal point for acting as a phase qubit, with a phase difference of {pi}/2 and impurity concentration no greater than 0.05%, we find only a slight decrease in the Q factor of less than 0.01%.

  8. Effect of impurity radiation on tokamak equilibrium

    International Nuclear Information System (INIS)

    Rebut, P.H.; Green, B.J.

    1977-01-01

    The energy loss from a tokamak plasma due to the radiation from impurities is of great importance in the overall energy balance. Taking the temperature dependence of this loss for two impurities characteristic of those present in existing tokamak plasmas, the condition for radial power balance is derived. For the impurities considered (oxygen and iron) it is found that the radiation losses are concentrated in a thin outer layer of the plasma and the equilibrium condition places an upper limit on the plasma paraticle number density in this region. This limiting density scales with mean current density in the same manner as is experimentally observed for the peak number density of tokamak plasmas. The stability of such equilibria is also discussed. (author)

  9. Impurity transport calculations for the limiter shadow region of a tokamak

    International Nuclear Information System (INIS)

    Claassen, H.A.; Repp, H.

    1981-01-01

    Impurity transport calculations are presented for the scrape-off layer of a tokamak with a poloidal ring limiter. The theory is based on the drift-kinetic equations for the impurity ions in their different ionization states. It is developed in the limit of low impurity concentrations under due consideration of electron impact ionization, Coulomb collisions with hydrogen ions streaming onto a neutralizing surface, a convection along the magnetic field, and a radial drift. The background plasma and the impurity sources at the walls enter the theory as input parameters. Numerical results are given for the radial profiles of density, temperature, particle flux, and energy flux of wall-released impurity ions as well as for the screening efficiency of the scrape-off layer neglecting impurity re-emission from the limiter. (author)

  10. Impurity identifications, concentrations and particle fluxes from spectral measurements of the EXTRAP T2R plasma

    Science.gov (United States)

    Menmuir, S.; Kuldkepp, M.; Rachlew, E.

    2006-10-01

    An absolute intensity calibrated 0.5 m spectrometer with optical multi-channel analyser detector was used to observe the visible-UV radiation from the plasma in the EXTRAP T2R reversed field pinch experiment. Spectral lines were identified indicating the presence of oxygen, chromium, iron and molybdenum impurities in the hydrogen plasma. Certain regions of interest were examined in more detail and at different times in the plasma discharge. Impurity concentration calculations were made using the absolute intensities of lines of OIV and OV measured at 1-2 ms into the discharge generating estimates of the order of 0.2% of ne in the central region rising to 0.7% of ne at greater radii for OIV and 0.3% rising to 0.6% for OV. Edge electron temperatures of 0.5-5 eV at electron densities of 5-10×1011 cm-3 were calculated from the measured relative intensities of hydrogen Balmer lines. The absolute intensities of hydrogen lines and of multiplets of neutral chromium and molybdenum were used to determine particle fluxes (at 4-5 ms into the plasma) of the order 1×1016, 7×1013 and 3×1013 particles cm-2 s-1, respectively.

  11. Synthesis and electrochemical characteristics of Sn-Sb-Ni alloy composite anode for Li-ion rechargeable batteries

    International Nuclear Information System (INIS)

    Guo Hong; Zhao Hailei; Jia Xidi; Qiu Weihua; Cui Fenge

    2007-01-01

    Micro-scaled Sn-Sb-Ni alloy composite was synthesized from oxides of Sn, Sb and Ni via carbothermal reduction. The phase composition and electrochemical properties of the Sn-Sb-Ni alloy composite anode material were studied. The prepared alloy composite electrode exhibits a high specific capacity and a good cycling stability. The lithiation capacity was 530 mAh g -1 in the first cycle and maintained at 370-380 mAh g -1 in the following cycles. The good electrochemical performance may be attributed to its relatively large particle size and multi-phase characteristics. The former reason leads to the lower surface impurity and thus the lower initial capacity loss, while the latter results in a stepwise lithiation/delithiation behavior and a smooth volume change of electrode in cycles. The Sn-Sb-Ni alloy composite material shows a good candidate anode material for the rechargeable lithium ion batteries

  12. Influences of the quantity of Mg2Sn phase on the corrosion behavior of Mg-7Sn magnesium alloy

    International Nuclear Information System (INIS)

    Liu Xianbin; Shan Dayong; Song Yingwei; Chen Rongshi; Han Enhou

    2011-01-01

    The influence of the quantity of the Mg 2 Sn phase on the corrosion behavior of different solution temperature treated Mg-7Sn magnesium alloy has been investigated by electrochemical measurements, scanning electron microscope (SEM) observation, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. With the increase of solution temperature, the quantity of Mg 2 Sn phase decreased and the tin concentration of matrix increased. The dissolved tin in Mg matrix took part in the film formation and the constituent of film was magnesium oxide and stannic oxide. The corrosion mode and corrosion rate were associated with the quantity of Mg 2 Sn phases and tin concentration of the matrix. If most of tin was present as Mg 2 Sn, the corrosion mode was pitting corrosion and it accelerated the corrosion rate. If most of tin was dissolved in matrix, the corrosion mode was filiform corrosion and it decreased the corrosion rate. The experiment evidences demonstrated that the corrosion resistance can be improved by increasing the tin concentration of matrix and the lowest corrosion rate was observed for sample solution treated at 540 o C.

  13. Spectroscopical studies of impurities in the belt pinch HECTOR

    International Nuclear Information System (INIS)

    Singethan, J.

    1981-04-01

    In this paper UV-line-intensity measurements of impurities are presented, which have been performed in the belt-pinch HECTOR. From the line-intensities impurity concentrations and information on the radiation losses is be obtained. At temperatures below 100 eV, the energy loss due to line emission of oxygen and carbon impurities is one of the most important electron energy loss mechanisms. Thus the measurement and calculation of the radiation losses is of particular relevance. Furthermore the electron temperature time dependence can be obtained by comparing the line intensity time dependence with the solution of the respective rate equations. (orig./HT) [de

  14. Phase Equilibria in the Bi-In-Sn-Zn System. Thermal Analysis vs. Calculations

    Directory of Open Access Journals (Sweden)

    Dębski A.

    2017-12-01

    Full Text Available With the use of the differential thermal analysis (DTA, studies of the phase transitions were conducted for 90 of alloys from the quaternary Bi-In-Sn-Zn system and for the constant ratio of Bi:In and Bi:Sn. The studies were conducted for the alloys prepared from the purity metals (Bi, In, Sn, Zn = 99.999 mas. % by way of melting in a graphite crucible in a glove-box filled with Ar, in which the impurities level was less than 0.1 ppm. After melting and thorough mixing, the liquid alloys were poured out into a graphite test mold. The phase transition temperature data obtained from the DTA investigations were next confronted with those determined from the calculations based on the binary and ternary optimized thermodynamic parameters available in the literature. It was found that the experimental and the calculated phase transition temperatures were in good agreement.

  15. Instability of homogeneous distribution of charged substitutional impurity in semiconductors

    International Nuclear Information System (INIS)

    Vasilevskij, M.I.; Ershov, S.N.; Panteleev, V.A.

    1985-01-01

    A mechanism is suggested of instability of uniform impurity distribution in a semiconductor. The mechanism is associated with the vacancy wind effect and deflection from local neutrality in case of impurity concentration fluctuation occurrence. It is shown that the mechanism can be realized by irradiation of silicon doped with group-3 and group 5 elements

  16. PbSnTe injection lasers

    International Nuclear Information System (INIS)

    Oron, M.

    1982-03-01

    Carrier confined homostructure PbSnTe lasers were developed and investigated. In this laser structure good electrical and optical confinement can be achieved by a suitable carrier concentration profile. The advantage of these lasers over PbSnTe heterostructure lasers is the perfect lattice matching between the various layers of the structure. The desired carrier concentration profile was achieved by the growth of several epitaxial layers by the LPE method on a suitable substrate. The performance of these lasers was compared with that of previous homostructure and double heterostructure lasers. (H.K.)

  17. Innovative sludge pretreatment technology for impurity separation using micromesh.

    Science.gov (United States)

    Mei, Xiaojie; Han, Xiaomeng; Zang, Lili; Wu, Zhichao

    2018-05-23

    In order to reduce the impacts on sludge treatment facilities caused by impurities such as fibers, hairs, plastic debris, and coarse sand, an innovative primary sludge pretreatment technology, sludge impurity separator (SIS), was proposed in this study. Non-woven micromesh with pore size of 0.40 mm was used to remove the impurities from primary sludge. Results of lab-scale tests showed that impurity concentration, aeration intensity, and channel gap were the key operation parameters, of which the optimized values were below 25 g/L, 0.8 m 3 /(m 2  min), and 2.5 cm, respectively. In the full-scale SIS with treatment capacity of 300 m 3 /day, over 88% of impurities could be removed from influent and the cleaning cycle of micromesh was more than 16 days. Economic analysis revealed that the average energy consumption was 1.06 kWh/m 3 treated sludge and operation cost was 0.6 yuan/m 3 treated sludge.

  18. Polymer-SnO2 composite membranes

    DEFF Research Database (Denmark)

    Nørgaard, Casper Frydendal; Skou, Eivind Morten

    . This work utilizes the latter approach and makes use of particles of tin dioxide (SnO2). Polymer-SnO2 composite membranes were successfully prepared using an ion-exchange method. SnO2 was incorporated into membranes by ion-exchange in solutions of SnCl2 ∙ 2 H2O in methanol, followed by oxidation to SnO2...... in air. The content of SnO2 proved controllable by adjusting the concentration of the ion-exchange solution. The prepared nanocomposite membranes were characterized by powder XRD, 119Sn MAS NMR, electrochemical impedance spectroscopy, water uptake and tensile stress-strain measurements. For Nafion 117...

  19. Electrical resistivity of liquid iron with high concentration of light element impurities

    Science.gov (United States)

    Wagle, F.; Steinle-Neumann, G.

    2017-12-01

    The Earth's outer core mainly consists of liquid iron, enriched with several weight percent of lighter elements, such as silicon, oxygen, sulfur or carbon. Electrical resistivities of alloys of this type determine the stability of the geodynamo. Both computational and experimental results show that resistivites of Fe-based alloys deviate significantly from values of pure Fe. Using optical conductivity values computed with the Kubo-Greenwood formalism for DFT-based molecular dynamics results, we analyze the high-P and T behavior of resitivities for Fe-alloys containing various concentrations of sulfur, oxygen and silicon. As the electron mean free path length in amorphous and liquid material becomes comparable to interatomic distances at high P and T, electron scattering is expected to be dominated by the short-range order, rather than T-dependent vibrational contributions, and we describe such correlations in our results. In analogy to macroscopic porous media, we further show that resistivity of a liquid metal-nonmetal alloy is determined to first order by the resistivity of the metallic matrix and the volume fraction of non-metallic impurities.

  20. Contribution to the spectrographic determination of impurities in uranium by the carrier distillation method

    International Nuclear Information System (INIS)

    Capdevila, C.

    1967-01-01

    The carrier distillation method for the determination of impurities in uranium has been modified in order to get a greater sensitivity. Electrodes 9.5 mm. diam. with a crater 7 mm. diam. and 10 mm. deep have been used, being the weigh of charge 300 mg.. The elements considered were: Al, As, B, Ca, Cd, Co, Cr, Cu, Fe, Mg, Mn, Mo, Ni, P, Pb, Si, Sn, Ti and V, over the range 0.01 to 30 ppm. (Author) 13 refs

  1. Impurity penetration through the stochastic layer near the separatrix in tokamaks

    International Nuclear Information System (INIS)

    Morozov, D.K.; Herrera, J.J.E.; Rantsev-Kartinov, V.A.

    1995-01-01

    It is shown that a stochastic layer produced by ripple perturbations near the separatrix in tokamaks, leads to anomalous plasma flow out of the bulk plasma along perturbed field lines, which brings out impurities. This suggests that the stochastic layer may play a cleaning role. There is an opposite process of anomalous impurity diffusion into the plasma. The balance of these two processes defines the impurity concentration in the bulk plasma. copyright 1995 American Institute of Physics

  2. Influence of impurities on the fuel retention in fusion reactors

    International Nuclear Information System (INIS)

    Reinhart, Michael

    2015-01-01

    The topic of this thesis is the influence of plasma impurities on the hydrogen retention in metals, in the scope of plasma-wall-interaction research for fusion reactors. This is addressed experimentally and by modelling. The mechanisms of the hydrogen retention are influenced by various parameters like the wall temperature, ion energy, flux and fluence as well as the plasma composition. The plasma composition is a relevant factor for hydrogen retention in fusion reactors, as their plasma will also contain impurities like helium or seeded impurities like argon. The experiments treated in this thesis were performed in the linear plasma generator PSI-2 at Forschungszentrum Juelich, and are divided in 3 parts: The first experiments cover the plasma diagnostics, most importantly the measurement of the impurity ion concentration in the plasma by optical emission spectroscopy. This is a requirement for the later experiments with mixed plasmas. Diagnostics like Langmuir probe measurements are not applicable for this task because they do not distinguish different ionic species. The results also show that the impurity ion concentrations cannot be simply concluded from the neutral gas input to the plasma source, because the relation between the neutral gas concentration and impurity ion concentration is not linear. The second and main part of the experiments covers the exposure of tungsten samples to deuterium plasmas. In the experiments, the impurity ion type and concentration is variated, to verify the general influence of helium and argon on the deuterium retention in tungsten samples exposed at low temperatures. It shows that helium impurities reduce the amount of retained deuterium by a factor of 3, while argon impurities slightly increase the total retention, compared to exposures to a pure deuterium plasma. Cross-sections of the exposed tungsten surfaces via TEM-imaging reveal a 12-15 nm deep helium nanobubble layer at the surface of the sample, while for the cases of

  3. Influence of impurities on the fuel retention in fusion reactors

    Energy Technology Data Exchange (ETDEWEB)

    Reinhart, Michael

    2015-07-01

    The topic of this thesis is the influence of plasma impurities on the hydrogen retention in metals, in the scope of plasma-wall-interaction research for fusion reactors. This is addressed experimentally and by modelling. The mechanisms of the hydrogen retention are influenced by various parameters like the wall temperature, ion energy, flux and fluence as well as the plasma composition. The plasma composition is a relevant factor for hydrogen retention in fusion reactors, as their plasma will also contain impurities like helium or seeded impurities like argon. The experiments treated in this thesis were performed in the linear plasma generator PSI-2 at Forschungszentrum Juelich, and are divided in 3 parts: The first experiments cover the plasma diagnostics, most importantly the measurement of the impurity ion concentration in the plasma by optical emission spectroscopy. This is a requirement for the later experiments with mixed plasmas. Diagnostics like Langmuir probe measurements are not applicable for this task because they do not distinguish different ionic species. The results also show that the impurity ion concentrations cannot be simply concluded from the neutral gas input to the plasma source, because the relation between the neutral gas concentration and impurity ion concentration is not linear. The second and main part of the experiments covers the exposure of tungsten samples to deuterium plasmas. In the experiments, the impurity ion type and concentration is variated, to verify the general influence of helium and argon on the deuterium retention in tungsten samples exposed at low temperatures. It shows that helium impurities reduce the amount of retained deuterium by a factor of 3, while argon impurities slightly increase the total retention, compared to exposures to a pure deuterium plasma. Cross-sections of the exposed tungsten surfaces via TEM-imaging reveal a 12-15 nm deep helium nanobubble layer at the surface of the sample, while for the cases of

  4. Controlling Thermodynamic Properties of Ferromagnetic Group-IV Graphene-Like Nanosheets by Dilute Charged Impurity

    Science.gov (United States)

    Yarmohammadi, Mohsen; Mirabbaszadeh, Kavoos

    2017-05-01

    Using the Kane-Mele Hamiltonian, Dirac theory and self-consistent Born approximation, we investigate the effect of dilute charged impurity on the electronic heat capacity and magnetic susceptibility of two-dimensional ferromagnetic honeycomb structure of group-IV elements including silicene, germanene and stanene within the Green’s function approach. We also find these quantities in the presence of applied external electric field. Our results show that the silicene (stanene) has the maximum (minimum) heat capacity and magnetic susceptibility at uniform electric fields. From the behavior of theses quantities, the band gap has been changed with impurity concentration, impurity scattering strength and electric field. The analysis on the impurity-dependent magnetic susceptibility curves shows a phase transition from ferromagnetic to paramagnetic and antiferromagnetic phases. Interestingly, electronic heat capacity increases (decreases) with impurity concentration in silicene (germanene and stanene) structure.

  5. EUV impurity study of the Alcator tokamak

    International Nuclear Information System (INIS)

    Terry, J.L.; Chen, K.I.; Moos, H.W.; Marmar, E.S.

    1977-06-01

    The intensity of resonance line radiation from oxygen, nitrogen, carbon and molybdenum impurities has been measured in the high field (80 kG), high density (6 x 10 14 cm -3 ) discharges of the Alcator tokamak, using a 0.4 m normal incidence monochromator (300 to 1300 A) with its line of sight fixed along a major radius. The total light impurity concentrations were 2 x 10 -3 , 7 x 10 -4 , and 3 x 10 -3 at central electron densities of 4.5 x 10 13 cm -3 (burnout), 4.0 x 10 13 (low density plateau) and 6.0 x 10 14 (high density plateau). Both a simple model and a computer code which included Pfirsch-Schluter impurity diffusion were used to estimate oxygen influxes of 1.6 x 10 13 cm -2 sec -1 and 1.5 x 10 14 cm -2 sec -1 at the plasma edge in the low and high density emission plateaus. The resulting values of Z/sub eff/, including the contributions due to both the light impurities and molybdenum, were close to one. The power lost through the impurity line radiation accounted for approximately equal to 7 percent of the total ohmic input power at high densities

  6. Metal impurities profile in a 450kg multi-crystalline silicon ingot by Cold Neutron Prompt Gamma-ray Activation Analysis

    International Nuclear Information System (INIS)

    Baek, Hani; Sun, Gwang Min; Kim, Ji seok; Oh, Mok; Chung, Yong Sam; Moon, Jong Hwa; Kim, Sun Ha; Baek, Sung Yeol; Tuan, Hoang Sy Minh

    2014-01-01

    Metal impurities are harmful to multi-crystalline silicon solar cells. They reduce solar cell conversion efficiencies through increased carrier recombination. They are present as isolated point-like impurities or precipitates. This work is to study the concentration profiles of some metal impurities of the directionally solidified 450kg multi-crystalline silicon ingot grown for solar cell production. The concentration of such impurities are generally below 10 15 cm -3 , and as such cannot be detected by physical techniques such as secondary-ion-mass spectroscopy(SIMS). So, we have tried to apply Cold Neutron - Prompt Gamma ray Activation Analysis(CN-PGAA) at the HANARO reactor research. The impurity concentrations of Au, Mn, Pt, Mo of a photovoltaic grade multi-crystalline silicon ingot appear by segregation from the liquid to the solid phase in the central region of the ingot during the crystallization. In the impurities concentration of the bottom region is higher than middle region due to the solid state diffusion. Towards the top region the segregation impurities diffused, during cooling process

  7. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

    Science.gov (United States)

    Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

    2018-02-01

    Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

  8. Internal friction behavior of liquid Bi-Sn alloys

    International Nuclear Information System (INIS)

    Wu Aiqing; Guo Lijun; Liu Changsong; Jia Erguang; Zhu Zhengang

    2005-01-01

    Pure Bi and Sn and four Bi-Sn alloys distributed on the entire concentration range were selected for internal-friction investigation over a wide temperature range. There exist two peaks in the plots of internal friction versus temperature for liquid Sn, Bi-Sn60 and Bi-Sn90 alloys, one peak being located at about 480 - bar Cand another at about 830 - bar C. Only a single internal-friction peak at about 830 - bar C occurs in liquid Bi-Sn43 (eutectic composition). No internal-friction peak appears in liquid Bi-Sn20 alloy and pure Bi. The height of the internal-friction peaks depends on the content of Sn. The present finding suggests that Sn-rich Bi-Sn alloys may inherit the internal-friction behaviors of pure Sn, whereas Bi-rich Bi-Sn alloy seems to be like pure Bi. The position of the internal-friction peaks is frequency dependent, which resembles the internal-friction feature in structure transition in solids

  9. Internal friction behavior of liquid Bi-Sn alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wu Aiqing [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Guo Lijun [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Liu Changsong [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Jia Erguang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Zhu Zhengang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China)]. E-mail: zgzhu@issp.ac.cn

    2005-12-01

    Pure Bi and Sn and four Bi-Sn alloys distributed on the entire concentration range were selected for internal-friction investigation over a wide temperature range. There exist two peaks in the plots of internal friction versus temperature for liquid Sn, Bi-Sn60 and Bi-Sn90 alloys, one peak being located at about 480{sup -}bar Cand another at about 830{sup -}bar C. Only a single internal-friction peak at about 830{sup -}bar C occurs in liquid Bi-Sn43 (eutectic composition). No internal-friction peak appears in liquid Bi-Sn20 alloy and pure Bi. The height of the internal-friction peaks depends on the content of Sn. The present finding suggests that Sn-rich Bi-Sn alloys may inherit the internal-friction behaviors of pure Sn, whereas Bi-rich Bi-Sn alloy seems to be like pure Bi. The position of the internal-friction peaks is frequency dependent, which resembles the internal-friction feature in structure transition in solids.

  10. The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kulbachinskii, V A; Negishi, H; Sasaki, M; Giman, Y; Inoue, M

    1997-07-01

    Thermoelectric power, electrical resistivity, and Hall effect of p-type Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} (0 < x < 0.03) singlecrystals have been measured in the temperature range 4.2--300K. By doping of Sn atoms into the host Bi{sub 2}Te{sub 3} lattice, the enhancement in the thermoelectric power is observed in the intermediate temperature range 30--150K for x {le} 0,0075. The activation type behavior of Hall coefficient and resistivity are found which corresponds to the Sn-induced impurity band located above the second lower valence band.

  11. Influence of the impurity-defect and impurity-impurity interactions on the crystalline silicon solar cells conversion efficiency; Influence des interactions impurete-defaut et impurete-impurete sur le rendement de conversion des cellules photovoltaiques au silicium cristallin

    Energy Technology Data Exchange (ETDEWEB)

    Dubois, S

    2007-05-15

    This study aims at understanding the influence of the impurity - defect interaction on the silicon solar cell performances. We studied first the case of single-crystalline silicon. We combined numerical simulations and experimental data providing new knowledge concerning metal impurities in silicon, to quantify the evolution of the conversion efficiency with the impurity concentration. Mainly due to the gettering effects, iron appears to be quite well tolerated. It is not the case for gold, diffusing too slowly. Hydrogenation effects were limited. We transposed then this study toward multi-crystalline silicon. Iron seems rather well tolerated, due to the gettering effects but also due to the efficiency of the hydrogenation. When slow diffusers are present, multi crystalline silicon is sensitive to thermal degradation. n-type silicon could solve this problem, this material being less sensitive to metal impurities. (author)

  12. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  13. Behaviour of carbon-bearing impurity suspensions in sodium loops

    Energy Technology Data Exchange (ETDEWEB)

    Kozlov, F A; Zagorulko, Yu I; Alexseev, V V [Institute of Physics and Power Engineering, Obninsk (USSR)

    1980-05-01

    The experimental estimation results of the carbon-bearing impurity particle sizes in sodium by the sedimentometric analysis methods are presented. The techniques and results of the mass transfer calculations between the sodium flows contained the carbon-bearing impurity disperse phase, and the channel walls, the carbon particles solution kinetics and the soluble carbon near-wall concentration in channel with allowance for the flow-wall mass transfer processes, are given. (author)

  14. Behaviour of carbon-bearing impurity suspensions in sodium loops

    International Nuclear Information System (INIS)

    Kozlov, F.A.; Zagorulko, Yu.I.; Alexseev, V.V.

    1980-01-01

    The experimental estimation results of the carbon-bearing impurity particle sizes in sodium by the sedimentometric analysis methods are presented. The techniques and results of the mass transfer calculations between the sodium flows contained the carbon-bearing impurity disperse phase, and the channel walls, the carbon particles solution kinetics and the soluble carbon near-wall concentration in channel with allowance for the flow-wall mass transfer processes, are given. (author)

  15. Computers in the investigation of the impurity content of high-purity materials

    International Nuclear Information System (INIS)

    Makarov, Yu.B.; Yan'kov, S.V.

    1987-01-01

    The efficiency of the concept of data banks for the accumulation and processing of information is now generally acknowledged. In scientific investigations not only bibliographic but also factual data banks are becoming more and more prevalent. In this article, the authors consider the possibilities of providing a data bank on high-purity materials for the study of impurity contents. Also in this paper, the authors distinguish the following groups of problems that arise in the study of impurity composition and presents examples of their proposed solutions to these problems: the analysis of error and the determination of the most probably value of impurity concentration; the estimation of average properties of impurity composition with respect to groups of impurities and samples, and the forecast of the complete impurity composition

  16. Moessbauer experiments, ch. 1

    International Nuclear Information System (INIS)

    Maring, K.W.

    1977-01-01

    The magnetic properties of iron base alloys have been investigated as a function of the concentrations of the sp-elements Al, Si, Ga, Ge, As, Sn, and Sb. An extensive description of the Moessbauer Effect Spectroscopy (MES) technique is given. The results of MES experiments at room temperature for FeX alloys (X stands for one of the sp-elements) and impurity concentrations of 1, 3 and 5 a/o are presented. Through temperature dependant measurements the hyperfine fields H ((m,n)T) at iron nuclei in different surroundings are obtained. The change of the Curie temperature of the various dilute iron-base alloys, with respect to pure iron, as a function of the impurity concentration is investigated. Average magnetic hyperfine fields and isomer shifts measured at 119 Sn nuclei in Fe 119 Sn are discussed

  17. Study of Sn100-xMnx amorphous system by 119Sn Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Drago, V.

    1986-01-01

    Thin films of Sn 100-x Mn x amorphous alloys with large range of concentrations were procedure by vapor condensation technique on substrates at temperatures near to liquid helium. The magnetic and paramagnetic hyperfine spectra, and the ordering temperatures were measured by 119 Sn Moessbauer effect. The electrical resistivity was used for characterizing the amorphous state. All the measurements were done 'in situ'. A magnetic phase diagram is proposed. (M.C.K.) [pt

  18. Impurity effects on the magnetic ordering in chromium

    International Nuclear Information System (INIS)

    Fishman, R.S.

    1992-05-01

    It is well-known that impurities profoundly alter the magnetic properties of chromium. While vanadium impurities suppress the Neel temperature T N , manganese impurities enhanced T N substantially. As evidenced by neutron scattering experiments, doping with as little as 0.2% vanadium changes the transition from weakly first order to second order. Young and Sokoloff explained that the first-order transition in pure chromium is caused by a charge-density wave which is the second harmonic of the spin-density wave. By examining the subtle balance between the spin-density and charge- density wave terms in the mean-field free energy, we find that the first-order transition is destroyed when the vanadium concentration exceeds about 0.15%, in agreement with experiments

  19. Photo-electrochemical solar cells with a SnO/sub 2/-liquid junction sensitized with highly concentrated dyes

    Energy Technology Data Exchange (ETDEWEB)

    Shimura, Michiko; Shakushiro, Kiyoaki; Shimura, Yukio

    1986-09-01

    The sensitization of a SnO/sub 2/-liquid junction cell with highly concentrated dyes was investigated. The dyes used were Crystal Violet, Methyl Violet B, Malachite Green, Pararosaniline, and Rhodamine B. Anomalous or positive photovoltages were obtained in the system when Fe(CN)/sub 6//sup 3 -/ was added. The performance of the photovoltaic cells showed an open-circuit photovoltage, Vsub(oc), of 175 mV, a short-circuit photocurrent, Isub(sc), of 12 ..mu..A, and a fill factor of 0.42. The action spectra resembled the absorption spectra of the aggregated dyes. A D-D mechanism is introduced to explain the anomaly of the photovoltage of the SnO/sub 2/ electrode sensitized with the dyes. This behaviour is relevant to the practical usage of such photo-electrochemical cells and merits further investigation.

  20. In vitro genotoxicity of piperacillin impurity-A

    African Journals Online (AJOL)

    SERVER

    2007-09-19

    Sep 19, 2007 ... The manufacturing and storage of the piperacillin produce different impurities of various concentrations, which may influence the efficacy and safety of the drug. Since no report of ..... Guidance for Industry, Food and Drug ...

  1. Spectroscopic investigation of heavy impurity behaviour during ICRH with the JET ITER-like wall

    Energy Technology Data Exchange (ETDEWEB)

    Czarnecka, A. [Institute of Plasma Physics and Laser Microfusion, Association EURATOM-IPPLM, Hery 23 Str., 01-497 Warsaw (Poland); Bobkov, V.; Maggi, C.; Pütterich, T. [Max-Planck-Institut für Plasmaphysik, EURATOM-Association, D-85748 Garching (Germany); Coffey, I. H. [Department of Physics, Queen' s University, Belfast, BT7 1NN, Northern Ireland (United Kingdom); Colas, L. [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Jacquet, P.; Lawson, K. D. [Euratom/CCFE Association, Culham Science Centre, Abingdon, OX14 3DB (United Kingdom); Lerche, E.; Van Eester, D. [Association EURATOM - Belgian State, ERM-KMS, TEC Partner (Belgium); Mayoral, M.-L. [Euratom/CCFE Association, Culham Science Centre, Abingdon, OX14 3DB, UK and EFDA Close Support Unit, Garching (Germany); Collaboration: JET-EFDA Contributors

    2014-02-12

    Magnetically confined plasmas, such as those produced in the tokamak JET, contain measurable amounts of impurity ions produced during plasma-wall interactions (PWI) from the plasma-facing components and recessed wall areas. The impurities, including high- and mid-Z elements such as tungsten (W) from first wall tiles and nickel (Ni) from Inconel structure material, need to be controlled within tolerable limits, to ensure they do not significantly affect the performance of the plasma. This contribution focuses on documenting W and Ni impurity behavior during Ion Cyclotron Resonance Heating (ICRH) operation with the new ITER-Like Wall (ILW). Ni- and W-concentration were derived from VUV spectroscopy and the impact of applied power level, relative phasing of the antenna straps, plasma separatrix - antenna strap distance, IC resonance position, edge density and different plasma configuration, on the impurity release during ICRH are presented. For the same ICRH power the Ni and W concentration was lower with dipole phasing than in the case of −π/2 phasing. The Ni concentration was found to increase with ICRH power and for the same NBI power level, ICRH-heated plasmas were characterized by two times higher Ni impurity content. Both W and Ni concentrations increased strongly with decreasing edge density which is equivalent to higher edge electron temperatures and more energetic ions responsible for the sputtering. In either case higher levels were found in ICRH than in NBI heated discharges. When the central plasma temperature was similar, ICRH on-axis heating resulted in higher core Ni impurity concentration in comparison to off-axis ICRH in L-mode. It was also found that the main core radiation during ICRH came from W.

  2. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    International Nuclear Information System (INIS)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

    2016-01-01

    Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

  3. Impurity flux collection at the plasma edge of the tokamak MT-1

    International Nuclear Information System (INIS)

    Hildebrandt, D.; Bakos, J.S.; Petravich, G.

    1989-09-01

    Fluxes of intrinsic and injected impurities and background plasma ions were collected using a bidirectional probe at the plasma edge of the tokamak MT-1. The directional and radial dependences of injected impurities and plasma ions were very similar indicating a strong coupling of the impurity transport to the dynamics of the background plasma. The measured intrinsic concentration of about 10 -4 for Mo at the plasma edge is derived. (author) 17 refs.; 5 figs

  4. Some physico-chemical properties of liquid Ag-Sn-Zn

    International Nuclear Information System (INIS)

    Terzieff, P.

    2010-01-01

    The mean square concentration fluctuations in the long wavelength limit, the surface tension, the segregation behavior and the viscosity of the liquid system Ag-Sn-Zn are calculated in a semi-empirical manner based on experimental thermodynamic data. The increased intensity of fluctuations in the concentration of Sn extending over an wide range of composition is the dominant feature of the system. In a likewise manner, the tendency of segregation into the surface layer is observed to be most noticeable for Sn-atoms. As a consequence, even at massive additions of Ag or Zn up to 60 at% the surface tension is expected not to exceed the value of pure Sn by more than 15%. The viscosities are indicated to increase markedly but in a non-linear manner with the content of Ag. The excess viscosity is found to be negative throughout the system being more pronounced on the Ag-Sn side than on the Ag-Zn or the Sn-Zn side of the system.

  5. Whisker and Hillock formation on Sn, Sn-Cu and Sn-Pb electrodeposits

    International Nuclear Information System (INIS)

    Boettinger, W.J.; Johnson, C.E.; Bendersky, L.A.; Moon, K.-W.; Williams, M.E.; Stafford, G.R.

    2005-01-01

    High purity bright Sn, Sn-Cu and Sn-Pb layers, 3, 7 and 16 μm thick were electrodeposited on phosphor bronze cantilever beams in a rotating disk apparatus. Beam deflection measurements within 15 min of plating proved that all electrodeposits had in-plane compressive stress. In several days, the surfaces of the Sn-Cu deposits, which have the highest compressive stress, develop 50 μm contorted hillocks and 200 μm whiskers, pure Sn deposits develop 20 μm compact conical hillocks, and Sn-Pb deposits, which have the lowest compressive stress, remain unchanged. The differences between the initial compressive stresses for each alloy and pure Sn is due to the rapid precipitation of Cu 6 Sn 5 or Pb particles, respectively, within supersaturated Sn grains produced by electrodeposition. Over longer time, analysis of beam deflection measurements indicates that the compressive stress is augmented by the formation of Cu 6 Sn 5 on the bronze/Sn interface, while creep of the electrodeposit tends to decrease the compressive stress. Uniform creep occurs for Sn-Pb because it has an equi-axed grain structure. Localized creep in the form of hillocks and whiskers occurs for Sn and Sn-Cu because both have columnar structures. Compact hillocks form for the Sn deposits because the columnar grain boundaries are mobile. Contorted hillocks and whiskers form for the Sn-Cu deposits because the columnar grain boundary motion is impeded

  6. Ternary semiconductors NiZrSn and CoZrBi with half-Heusler structure: A first-principles study

    Science.gov (United States)

    Fiedler, Gregor; Kratzer, Peter

    2016-08-01

    The ternary semiconductors NiZrSn and CoZrBi with C 1b crystal structure are introduced by calculating their basic structural, electronic, and phononic properties using density functional theory. Both the gradient-corrected PBE functional and the hybrid functional HSE06 are employed. While NiZrSn is found to be a small-band-gap semiconductor (Eg=0.46 eV in PBE and 0.60 eV in HSE06), CoZrBi has a band gap of 1.01 eV in PBE (1.34 eV in HSE06). Moreover, effective masses and deformation potentials are reported. In both materials A B C , the intrinsic point defects introduced by species A (Ni or Co) are calculated. The Co-induced defects in CoZrBi are found to have a higher formation energy compared to Ni-induced defects in NiZrSn. The interstitial Ni atom (Nii) as well as the VNiNii complex introduce defect states in the band gap, whereas the Ni vacancy (VNi) only reduces the size of the band gap. While Nii is electrically active and may act as a donor, the other two types of defects may compensate extrinsic doping. In CoZrBi, only the VCoCoi complex introduces a defect state in the band gap. Motivated by the reported use of NiZrSn for thermoelectric applications, the Seebeck coefficient of both materials, both in the p -type and the n -type regimes, is calculated. We find that CoZrBi displays a rather large thermopower of up to 500 μ V /K when p doped, whereas NiZrSn possesses its maximum thermopower in the n -type regime. The reported difficulties in achieving p -type doping in NiZrSn could be rationalized by the unintended formation of Nii2 + in conjunction with extrinsic acceptors, resulting in their compensation. Moreover, it is found that all types of defects considered, when present in concentrations as large as 3%, tend to reduce the thermopower compared to ideal bulk crystals at T =600 K. For NiZrSn, the calculated thermodynamic data suggest that additional Ni impurities could be removed by annealing, leading to precipitation of a metallic Ni2ZrSn phase.

  7. Fuel clean-up: poisoning of palladium-silver membranes by gaseous impurities

    International Nuclear Information System (INIS)

    Chabot, J.; Lecomte, J.; Grumet, C.; Sannier, J.

    1988-01-01

    The feasibility of a permeation process using a palladium-silver alloy membrane, to separate deuterium and tritium from fusion reactor gaseous wastes needs demonstration owing to poisoning effects of impurities. A parametric investigation of the poisoning by the most important expected gaseous impurities (C0, C0 2 and CH 4 ) is carried out with the loop PALLAS, in function of membrane temperature (100 to 450 0 C), H 2 pressure (0.3 to 14 kPa) and impurity concentration (0.2 to 9.5 vol. %). The poisoning effect of C0 is a concern for the process while C0 2 and CH 4 appear to have no practical effect on the permeation rate. Depending on C0 concentration optimal operating temperatures of the membrane should lie between 250 and 375 0 C limits

  8. Influence of impurities on the surface morphology of the TIBr crystal semiconductor

    International Nuclear Information System (INIS)

    Santos, Robinson A. dos; Silva, Julio B. Rodrigues da; Martins, Joao F.T.; Ferraz, Caue de M.; Costa, Fabio E. da; Mesquita, Carlos H. de; Hamada, Margarida M.; Gennari, Roseli F.

    2013-01-01

    The impurity effect in the surface morphology quality of TlBr crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detectors. The crystals were purified and grown by the Repeated Bridgman technique. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. A significant difference in the crystals impurity concentration was observed for almost all impurities, compared to those found in the raw material. The crystals wafer grown twice showed a surface roughness and grains which may be due to the presence of impurities on the surface, while those obtained with crystals grown three times presented a more uniform surface: even though, a smaller roughness was still observed. It was demonstrated that the impurities affect strongly the surface morphology quality of crystals. (author)

  9. Preparation and near-infrared absorption of nano-SnO{sub 2}/SiO{sub 2} assemblies with doping and without doping

    Energy Technology Data Exchange (ETDEWEB)

    Hai Shujie [Faculty of Material Science and Chemical Engineering, China University of Geosciences, Lu Mo Road 388, Wuhan 430074 (China); Yan Chunjie, E-mail: chjyan2005@126.co [Engineering Research Center of Nano-Geomaterials, Ministry of Education, China University of Geosciences, Lu Mo Road 388, Wuhan 430074 (China); Yu Hongjie; Xiao Guoqi; Wang Duo [Faculty of Material Science and Chemical Engineering, China University of Geosciences, Lu Mo Road 388, Wuhan 430074 (China)

    2009-11-20

    The assemblies of nano-SnO{sub 2}/SiO{sub 2} and Sb- or Pd-doped nano-SnO{sub 2}/SiO{sub 2}, in which the nano-SnO{sub 2} particles are located in the pores of mesoporous SiO{sub 2} dry gels, were synthesized. Only for the Sb-doped nano-SnO{sub 2}/SiO{sub 2} assemblies, a broad near-infrared absorption step occurs in the optical absorption spectrum of the wavelength range from 300 to 1500 nm. The near-infrared absorption phenomenon is attributed to electronic transitions from the ground states to the excitation states of the impurity energy levels, which are formed by Sb doping in SnO{sub 2}. With increasing the weight ratio of SnO{sub 2}:SiO{sub 2} or the annealing temperature, the near-infrared absorption step slope side exhibits 'red shift', which is caused by the quantum confinement effect weakening due to the increased SnO{sub 2} crystalline diameter.

  10. Interaction between impurities in Ag dilute alloys

    International Nuclear Information System (INIS)

    Krolas, K.; Wodniecka, B.; Wodniecki, P.; Uniwersytet Jagiellonski, Krakow

    1977-01-01

    Time dependent perturbed angular correlation measurements of gamma radiation in 111 Cd after 111 In decay were performed in AgPd and AgPt alloys. The concentration of Pd or Pt atoms being the nearest neighbours to the probe atoms is much higher than that one deduced from random impurity distribution. This effect results from the attractive interaction between the In probe atoms and Pt or Pd impurity atoms in silver host lattice. The binding energy of InPd and InPt complexes was measured as 135 +- 9 meV and 171 +- 9 meV, respectively. (author)

  11. Impurity-induced anisotropic semiconductor-semimetal transition in monolayer biased black phosphorus

    Science.gov (United States)

    Bui, D. H.; Yarmohammadi, Mohsen

    2018-07-01

    Taking into account the electron-impurity interaction within the continuum approximation of tight-binding model, the Born approximation, and the Green's function method, the main features of anisotropic electronic phase transition are investigated in monolayer biased black phosphorus (BP). To this end, we concentrated on the disordered electronic density of states (DOS), which gives useful information for electro-optical devices. Increasing the impurity concentration in both unbiased and biased impurity-infected single-layer BP, in addition to the decrease of the band gap, independent of the direction, leads to the midgap states and an extra Van Hove singularity inside and outside of the band gap, respectively. Furthermore, strong impurity scattering potentials lead to a semiconductor-semimetal transition and one more Van Hove singularity in x-direction of unbiased BP and surprisingly, this transition does not occur in biased BP. We found that there is no phase transition in y-direction. Since real applications require structures with modulated band gaps, we have studied the influence of different bias voltages on the disordered DOS in both directions, resulting in the increase of the band gap.

  12. Impurity effect of iron(III) on the growth of potassium sulfate crystal in aqueous solution

    Science.gov (United States)

    Kubota, Noriaki; Katagiri, Ken-ichi; Yokota, Masaaki; Sato, Akira; Yashiro, Hitoshi; Itai, Kazuyoshi

    1999-01-01

    Growth rates of the {1 1 0} faces of a potassium sulfate crystal were measured in a flow cell in the presence of traces of impurity Fe(III) (up to 2 ppm) over the range of pH=2.5-6.0. The growth rate was significantly suppressed by the impurity. The effect became stronger as the impurity concentration was increased and at pH5 it finally disappeared completely. The concentration and supersaturation effects on the impurity action were reasonably explained with a model proposed by Kubota and Mullin [J. Crystal Growth, 152 (1995) 203]. The surface coverage of the active sites by Fe(III) is estimated to increase linearly on increasing its concentration in solution in the range examined by growth experiments. The impurity effectiveness factor is confirmed to increase inversely proportional to the supersaturation as predicted by the model. Apart from the discussion based on the model, the pH effect on the impurity action is qualitatively explained by assuming that the first hydrolysis product of aqua Fe(III) complex compound, [Fe(H 2O) 5(OH)] 2+, is both growth suppression and adsorption active, but the second hydrolysis product, [Fe(H 2O) 4(OH) 2] +, is only adsorption active.

  13. Homogeneous (Cu, Ni)6Sn5 intermetallic compound joints rapidly formed in asymmetrical Ni/Sn/Cu system using ultrasound-induced transient liquid phase soldering process.

    Science.gov (United States)

    Li, Z L; Dong, H J; Song, X G; Zhao, H Y; Tian, H; Liu, J H; Feng, J C; Yan, J C

    2018-04-01

    Homogeneous (Cu, Ni) 6 Sn 5 intermetallic compound (IMC) joints were rapidly formed in asymmetrical Ni/Sn/Cu system by an ultrasound-induced transient liquid phase (TLP) soldering process. In the traditional TLP soldering process, the intermetallic joints formed in Ni/Sn/Cu system consisted of major (Cu, Ni) 6 Sn 5 and minor Cu 3 Sn IMCs, and the grain morphology of (Cu, Ni) 6 Sn 5 IMCs subsequently exhibited fine rounded, needlelike and coarse rounded shapes from the Ni side to the Cu side, which was highly in accordance with the Ni concentration gradient across the joints. However, in the ultrasound-induced TLP soldering process, the intermetallic joints formed in Ni/Sn/Cu system only consisted of the (Cu, Ni) 6 Sn 5 IMCs which exhibited an uniform grain morphology of rounded shape with a remarkably narrowed Ni concentration gradient. The ultrasound-induced homogeneous intermetallic joints exhibited higher shear strength (61.6 MPa) than the traditional heterogeneous intermetallic joints (49.8 MPa). Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Investigations on the structures of sup(99m)Tc and 113Sn pyrophosphate complexes and of sup(99m)Tc and 113Sn ethane hydroxy diphosphate complexes

    International Nuclear Information System (INIS)

    Hohloch, M.

    1980-01-01

    The complex formation of double labelling of bivalent 113 Sn and reduced, quadrovalent sup(99m)Tc with pyrophosphate (PPi) or ethane hydroxy diphosphorate (EHDP) has been investigated by means of in vivo distribution in the rat. The molar rates of sup(99m)Tc and 113 Sn to PPi resp. EHDP, as well as the pH-value and the initial concentration is varied. Furthermore, both elements were oxidized with H 2 O 2 in the alkaline medium. Four typical sup(99m)Tc and two typical 113 Sn in-vivo distribution patterns can be differentiated: 1. Pertechnetate, characterized by a strong enrichment in the stomach, forms when all Sn-II has been oxidized to Sn-IV in the preparation. 2. One bone-seeking 113 Sn-II PPi (EHDP) complex and a sup(99m)Tc-IV PPi (EHDP) complex each, which are formed at least equimolar ratio of Sn to PPi (EHDP) and suffiently high concentration of PPi (EHDP) in the physiological pH-value. 3. A non-bone-seeking sup(99m)Tc-IV compound, which is enriched in the kidneys instead, is formed in the weakly alkaline medium or at low PPi (EHDP) concentration. This is probably monomeric technetium dioxide dihydrate. 4. A sup(99m)Tc as well as a Sn colloid is formed at deficient ligand concentration (PPi or EHDP to Sn). The chemical composition of the complexes is discussed the possible reaction courses are illustrated in the following diagrams. (orig./MG) [de

  15. Trace impurities analysis determined by neutron activation in the PbI 2 crystal semiconductor

    Science.gov (United States)

    Hamada, M. M.; Oliveira, I. B.; Armelin, M. J.; Mesquita, C. H.

    2003-06-01

    In this work, a methodology for impurity analysis of PbI 2 was studied to investigate the effectiveness of the purification. Commercial salts were purified by the multi passes zone refining and grown by the Bridgman method. To evaluate the purification efficiency, samples from the bottom, middle and upper sections of the ZR ingot were analyzed after 200, 300 and 500 purification passes, by measurements of the impurity concentrations, using the neutron activation analysis (NAA) technique. There was a significant reduction of the impurities according to the purification numbers. The reduction efficiency was different for each element, namely: Au>Mn>Co˜Ag>K˜Br. The impurity concentration of the crystals grown after 200, 300 and 500 passes and the PbI 2 starting material were analyzed by NAA and plasma optical emission spectroscopy.

  16. Interactions of structural defects with metallic impurities in multicrystalline silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

    1997-01-01

    Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

  17. Doping effects on the structural, magnetic, and hyperfine properties of Gd-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Coelho-Júnior, H.; Aquino, J. C. R.; Aragón, F. H. [Universidade de Brasília, Núcleo de Física Aplicada, Instituto de Física (Brazil); Hidalgo, P. [Universidade de Brasília, Faculdade Gama-FGA, Setor Central Gama (Brazil); Cohen, R.; Nagamine, L. C. C. M. [Universidade de São Paulo, Instituto de Física (Brazil); Coaquira, J. A. H., E-mail: coaquira@unb.br; Silva, S. W. da [Universidade de Brasília, Núcleo de Física Aplicada, Instituto de Física (Brazil); Brito, H. F. [Universidade de São Paulo, Instituto de Química (Brazil)

    2014-12-15

    In this work we present the study of the structural, magnetic, and hyperfine properties of Gd-doped SnO{sub 2} nanoparticles synthesized by a polymer precursor method. The X-ray diffraction data analysis shows the formation of the rutile-type structure in all samples with Gd content from 1.0 to 10.0 mol%. The mean crystallite size is ∼11 nm for the 1.0 mol% Gd-doped samples and it shows a decreasing tendency as the Gd content is increased. The analysis of magnetic measurements indicates the coexistence of ferromagnetic and paramagnetic phases for the 1.0 mol% Gd-doped sample; however, above that content, only a paramagnetic phase is observed. The ferromagnetic phase observed in the 1.0 mol% Gd-doped sample has been assigned to the presence of bound magnetic polarons which overlap to create a spin-split impurity band. Room-temperature {sup 119}Sn Mössbauer measurements reveal the occurrence of strong electric quadrupole interactions. It has been determined that the absence of magnetic interactions even for 1.0 mol% Gd-doped sample has been related to the weak magnetic field associated to the exchange interaction between magnetic ions and the donor impurity band. The broad distribution of electric quadrupole interactions are attributed to the several non-equivalent surroundings of Sn{sup 4+} ions provoked by the entrance of Gd{sup 3+} ions and to the likely presence of Sn{sup 2+} ions. The isomer shift seems to be nearly independent of the Gd content for samples with Gd content below 7.5 mol%.

  18. Studies on the structural and electrical properties of F-doped SnO{sub 2} film prepared by APCVD

    Energy Technology Data Exchange (ETDEWEB)

    Yang Jingkai; Liu Wenchang; Dong Lizhong; Li Yuanxun; Li Chuan [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Zhao Hongli, E-mail: zhaohongli@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China)

    2011-10-01

    Fluorine-doped tin oxide films (SnO{sub 2}:F, FTO) were deposited by atmosphere pressure chemical vapor deposition (APCVD) on Na-Ca-Si glass coated with a diffusion barrier layer of SiO{sub x}C{sub y}. The effects of post-heating time at 700 deg. C on the structural and electrical properties of SnO{sub 2}:F films were investigated. The results showed that SnO{sub 2}:F films were polycrystalline with tetragonal SnO{sub 2} structure, SnO phase was present in SnO{sub 2} film, and abnormal grain growth was observed. The element distribution in the film depth was measured with X-ray photoelectron spectroscopy (XPS) and revealed that when the heating time increased from 202 s to 262 s, the oxygen content in the surface increased from 78.63% to 83.38%. The resistivity increased from 3.13 x 10{sup -4} for as-deposited films to 4.73 x 10{sup -4} {Omega} cm when post-heated for 262 s. Hall mobility is limited by the ionized impurity scattering rather than the grain boundary scattering.

  19. Behavior of arsenic impurity at antimony electric precipitation

    International Nuclear Information System (INIS)

    Kim, G.N.; Rakhmanov, A.

    2001-01-01

    In the paper the arsenic impurity electrochemical behavior and it purification from antimony by electric precipitation out of fluoride solutions was studied. For this the arsenic sample with mass 0.003-0.006 g has been irradiated at the WWR-SM nuclear reactor during 3-5 hour in the thermal neutron flux 10 13 n/cm 2 s, after 24 h keeping the sample has being dissolved in the concentrated nitric acid, and then it has been evaporated several times with distillation water addition up to wet precipitation state. It is shown, that arsenic impurity behavior character in the antimony electric precipitation out to fluoride electrolyte depends on the electrolyte content, electrolysis conditions, arsenic valency state in arsenic impurity existence in the five-valency state its joint electric reduction with antimony is practically not observing. In the case the arsenic being in three-valency state, it joint electric reduction with antimony is taking place. In this time the electrolytic antimony contents arsenic impurities less in dozen time than initial material

  20. Identification and control of unspecified impurity in trimetazidine dihydrochloride tablet formulation

    Science.gov (United States)

    Jefri; Puspitasari, A. D.; Talpaneni, J. S. R.; Tjandrawinata, R. R.

    2018-04-01

    Trimetazidine dihydrochloride is an anti-ischemic metabolic agent which is used as drug for angina pectoris treatment. The drug substance monograph is available in European Pharmacopoeia and British Pharmacopoeia, while the drug product monograph is not available in any of the pharmacopoeias. During development of trimetazidine dihydrochloride tablet formulation, we found increase of an unspecified impurity during preliminary stability study. The unspecified impurity was identified by high performance liquid chromatography coupled with mass spectrometry (LC-MS) and the molecular weight obtained was matching with the molecular weight of N-formyl trimetazidine (m/z 295). Further experiments were performed to confirm the suspected result by injecting the impurity standard and spiking formic acid into the drug substance. The retention time of N-formyl trimetazidine was similar to the unspecified impurity in drug product. Even spiking of formic acid into drug substance showed that the suspected impurity increased with increasing concentration of formic acid. The proposed mechanism of impurity formation is via amidation of piperazine moiety of trimetazidine by formic acid which present as residual solvent in tablet binder used in the formulation. Subsequently, the impurity in our product was controlled by choosing the primary packaging which could minimize the formation of impurity.

  1. Experimental study of impurity production in the Tokapole II tokamak

    International Nuclear Information System (INIS)

    Brickhouse, N.S.

    1984-01-01

    The release mechanism for low-Z impurities in Tokapole II has been characterized through impurity doping and isotopic exchange experiments. The desorption mechanism responsible for the low-Z impurity concentrations during the rise phase of the plasma current depends on the mass of the plasma ions. Doping with small amounts of any gas studied (H 2 , D 2 , He, N 2 , O 2 , Ne, Ar, Kr, and Xe) increases the early-time radiation of O, C, and N. For exotic gas doping this increase is linear with the dopant concentration, and proportional to the mass of the dopant, as expected for a momentum transfer process. Isotopic exchange experiments confirm the mass-dependence of oxygen production. A time-dependent coronal model is compared with the vacuum ultraviolet spectroscopic signals of the ionizing oxygen. The quantity sigma/tau (desorption cross section divided by particle confinement time) is determined to be 4 x 10 13 cm 2 /msec. The oxygen influx has a large peak early in the start-up

  2. Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Ruifeng [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Cao, Hongtao; Liang, Lingyan, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Liu, Caichi; Sun, Weizhong, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China)

    2016-04-04

    ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and from 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

  3. Impurities that cause difficulty in stripping actinides from commercial tetraalkylcarbamoylmethylphosphonates

    International Nuclear Information System (INIS)

    Bahner, C.T.; Shoun, R.R.; McDowell, W.J.

    1977-09-01

    Dihexyl[(diethylcarbamoyl)methyl]phosphonate (DHDECMP) in diethylbenzene extracts actinides well from 6 M nitric acid solution, but commercially available DHDECMP contains impurities which interfere with stripping the actinides from the organic extract. DHDECMP purified by molecular distillation does not contain these impurities, but the pot residue contains increased concentrations of them. Heating the purified DHDECMP causes the formation of products which interfere with stripping in the same way, suggesting that high temperatures employed in the manufacture of DHDECMP may produce the offending impurities. These impurities can be separated from the heat-decomposed material or the pot residues by dilution with a large volume of hexanes (causing part of the impurities to separate as a second liquid phase) followed by equilibration of the hexane solution with dilute alkali. After the treatment with hexane and dilute alkali, the DHDECMP is readily recovered and functions well in the actinide extraction process. Dibutyl[(dibutylcarbamoyl)methyl]-phosphonate (DBDBCMP) and di(2-ethylhexyl)[(diethylcarbamoyl)-methyl]phosphonate (DEHDECMP) are purified less effectively by these methods. Similar separation methods using diethylbenzene or CCl 4 as solvent do not remove impurities as completely as the hexane process. Impurities can also be removed from a benzene solution of the DHDECMP pot residue by passing it through a column packed with silica gel or diethylaminoethyl cellulose. These impurities have been separated into fractions for analytical examination by use of various solvents and by column chromatography. Hexyl hydrogen [(diethylcarbamoyl)methyl]-phosphonate has been identified tentatively as a principal objectionable impurity. Dihexyl phosphoric acid and possibly dihexylphosphonate have been identified in other fractions

  4. Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications

    Science.gov (United States)

    Arulanantham, A. M. S.; Valanarasu, S.; Jeyadheepan, K.; Ganesh, V.; Shkir, Mohd

    2018-01-01

    Herein we report a well-organized analysis on various key-properties of SnS thin films for solar cell fabricated by nebulizer spray pyrolysis technique. X-ray diffraction study reveals the polycrystalline nature of deposited films with orthorhombic crystal structure. The crystallite size was calculated and observed to be in the range of 8-28 nm with increasing molarity of precursor solution. The stoichiometry composition of SnS was confirmed by EDX study. SEM/AFM studies divulge the well-covered deposited surface with spherical grains and the size of grains is increasing with concentration and so the roughness. A remarkable decrease in band gap from 2.6 eV to 1.6 eV was noticed by raising the molar concentration from 0.025 M up to 0.075 M. A single strong emission peak at about 825 nm is observed in PL spectra with enhanced intensity which may be attributed to near band edge emission. From the Hall effect measurement, it was found that the SnS thin film exhibits p-type conductivity. The calculated values of resistivity and carrier concentration are 0.729 Ω cm and 3.67 × 1018/cm3 respectively. Furthermore, to study the photovoltaic properties of SnS thin films a heterojunction solar cell, FTO/n-CdS/p-SnS was produced and the conversion efficiency was recorded about 0.01%.

  5. Impurity content of reduced-activation ferritic steels and a vanadium alloy

    International Nuclear Information System (INIS)

    Klueh, R.L.; Grossbeck, M.L.; Bloom, E.E.

    1997-01-01

    Inductively coupled plasma mass spectrometry was used to analyze a reduced-activation ferritic/martensitic steel and a vanadium alloy for low-level impurities that would compromise the reduced-activation characteristics of these materials. The ferritic steel was from the 5-ton IEA heat of modified F82H, and the vanadium alloy was from a 500-kg heat of V-4Cr-4Ti. To compare techniques for analysis of low concentrations of impurities, the vanadium alloy was also examined by glow discharge mass spectrometry. Two other reduced-activation steels and two commercial ferritic steels were also analyzed to determine the difference in the level of the detrimental impurities in the IEA heat and steels for which no extra effort was made to restrict some of the tramp impurities. Silver, cobalt, molybdenum, and niobium proved to be the tramp impurities of most importance. The levels observed in these two materials produced with present technology exceeded the limits for low activation for either shallow land burial or recycling. The chemical analyses provide a benchmark for the improvement in production technology required to achieve reduced activation; they also provide a set of concentrations for calculating decay characteristics for reduced-activation materials. The results indicate the progress that has been made and give an indication of what must still be done before the reduced-activation criteria can be achieved

  6. Quasi-regular impurity distribution driven by charge-density wave

    International Nuclear Information System (INIS)

    Baldea, I.; Badescu, M.

    1991-09-01

    The displacive motion of the impurity distribution immersed into the one-dimensional system has recently been studied in detail as one kind of quasi-regularity driven by CDW. As a further investigation of this problem we develop here a microscopical model for a different kind of quasi-regular impurity distribution driven by CDW, consisting of the modulation in the probability of occupied sites. The dependence on impurity concentration and temperature of relevant CDW quantities is obtained. Data reported in the quasi-1D materials NbSe 3 and Ta 2 NiSe 7 (particularly, thermal hysteresis effects at CDW transition) are interpreted in the framework of the present model. Possible similarities to other physical systems are also suggested. (author). 38 refs, 7 figs

  7. Effect of indium and antimony doping in SnS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  8. Numerical simulation of the impurity photovoltaic effect in silicon solar cells doped with thallium

    International Nuclear Information System (INIS)

    Zhao Baoxing; Zhou Jicheng; Chen Yongmin

    2010-01-01

    Many attempts have been made to increase the efficiency of solar cells by introducing a deep impurity level in the semiconductor band gap. Since Tl may be the most suitable impurity for crystalline Si solar cells, the impurity photovoltaic (IPV) effect in silicon solar cell doped with thallium as impurity was investigated by the numerical solar cell simulator SCAPS. Results show that the IPV effect of thallium extends the spectral sensitivity in the sub-band gap range from 1000 to about 1400 nm. When the Tl concentration (N t ) is lower than the base doping density (N D ), the short-circuit current density and efficiency increase with increasing N t . But they decrease rapidly as the impurity density exceeds the shallow base doping density (N t >N D ). The optimum Tl concentration is about equal to the base doping density. For the Si solar cells with high internal reflection coefficients, the IPV effect becomes appreciable (ΔJ sc ∼9 mA/cm 2 and Δη∼2%).

  9. Sn surface-enriched Pt-Sn bimetallic nanoparticles as a selective and stable catalyst for propane dehydrogenation

    KAUST Repository

    Zhu, Haibo

    2014-12-01

    A new one pot, surfactant-free, synthetic route based on the surface organometallic chemistry (SOMC) concept has been developed for the synthesis of Sn surface-enriched Pt-Sn nanoparticles. Bu3SnH selectively reacts with [Pt]-H formed in situ at the surface of Pt nanoparticles, Pt NPs, obtained by reduction of K2PtCl4 by LiB(C2H5)3H. Chemical analysis, 1H MAS and 13C CP/MAS solid-state NMR as well as two-dimensional double-quantum (DQ) and triple-quantum (TQ) experiments show that organo-tin moieties Sn(n-C4H9) are chemically linked to the surface of Pt NPs to produce, in fine, after removal of most of the n-butyl fragment, bimetallic Pt-Sn nanoparticles. The Sn(n-CH2CH2CH2CH3) groups remaining at the surface are believed to stabilize the as-synthesized Pt-Sn NPs, enabling the bimetallic NPs to be well dispersed in THF. Additionally, the Pt-Sn nanoparticles can be supported on MgAl2O4 during the synthesis of the nanoparticles. Some of the Pt-Sn/MgAl2O4 catalyst thus prepared exhibits high activity in PROX of CO and an extremely high selectivity and stability in propane dehydrogenation to propylene. The enhanced activity in propane dehydrogenation is associated with the high concentration of inactive Sn at the surface of Pt nanoparticles which ”isolates” the active Pt atoms. This conclusion is confirmed by XRD, NMR, TEM, and XPS analysis.

  10. Density-functional study on the robust ferromagnetism in rare-earth element Yb-doped SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kai-Cheng, E-mail: kczhang@yeah.net [College of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Li, Yong-Feng [Key Laboratory of Integrated Exploitation of Bayan Obo Multi-Metal ResourcesInner Mongolia University of Science and Technology, Baotou 014010 (China); School of Mathematics, Physics and Biological Engineering, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Liu, Yong [State Key Laboratory of Metastable Materials Science and Technology and College of Science, Yanshan University, Qinhuangdao, Hebei 066004 (China); Chi, Feng [College of Engineering, Bohai University, Jinzhou 121013 (China)

    2014-06-01

    So far, little has been known about the ferromagnetism induced by p–f hybridization. We investigate the magnetic properties of Yb-doped SnO{sub 2} by first-principles calculations. We find that the doped system favors the ferromagnetic state and a room-temperature ferromagnetism can be expected in it. The origin of ferromagnetism can be attributed to the p–f hybridization between Yb impurity and its surrounding oxygen atoms. The formation energy of defect complex is calculated and the magnetic mediation of intrinsic vacancies is studied. Our results reveal that the formation energy of the defect complex with Sn vacancy is about 7.3 eV lower in energy than that with oxygen vacancy. This means Sn vacancy is much easier to form than oxygen vacancy in the presence of Yb substitution. The ferromagnetism of the doped system is greatly enhanced in the presence of Sn vacancies. - Highlights: • Room-temperature ferromagnetism can be expected in Yb-doped SnO{sub 2}. • The origin of ferromagnetism can be attributed to the p–f hybridization between Yb and O atoms. • Oxygen vacancies are much hard to form and contribute little to the ferromagnetism. • Sn vacancies are easy to form under oxygen-rich condition and stabilize the ferromagnetism effectively.

  11. Growth of intermetallics between Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layered structures

    International Nuclear Information System (INIS)

    Horváth, Barbara; Illés, Balázs; Shinohara, Tadashi

    2014-01-01

    Intermetallic growth mechanisms and rates are investigated in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. An 8–10 μm thick Sn surface finish layer was electroplated onto a Cu substrate with a 1.5–2 μm thick Ni or Ag barrier layer. In order to induce intermetallic layer growth, the samples were aged in elevated temperatures: 50 °C and 125 °C. Intermetallic layer growth was checked by focused ion beam–scanning ion microscope. The microstructures and chemical compositions of the intermetallic layers were observed with a transmission electron microscope. It has been found that Ni barrier layers can effectively block the development of Cu 6 Sn 5 intermetallics. The intermetallic growth characteristics in the Sn/Cu and Sn/Ni/Cu systems are very similar. The intermetallic layer grows towards the Sn layer and forms a discrete layer. Differences were observed only in the growth gradients and surface roughness of the intermetallic layer which may explain the different tin whiskering properties. It was observed that the intermetallic layer growth mechanisms are completely different in the Ag barrier layers compared to the Ni layers. In the case of Sn/Ag/Cu systems, the Sn and Cu diffused through the Ag layer, formed Cu 6 Sn 5 intermetallics mainly at the Sn/Ag interface and consumed the Ag barrier layer. - Highlights: • Intermetallic growth was characterised in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. • Intermetallic growth rates and roughness are similar in the Sn/Cu and Sn/Ni/Cu systems. • Sn/Ni/Cu system contains the following intermetallic layer structure Sn–Ni3Sn4–Ni3Sn2–Ni3Sn–Ni. • In the case of Sn/Ag/Cu systems the Sn and Cu diffusion consumes the Ag barrier layer. • When Cu reaches the Sn/Ag interface a large amount of Cu 6 Sn 5 forms above the Ag layer

  12. Structural properties and hyperfine characterization of Sn-substituted goethites

    Energy Technology Data Exchange (ETDEWEB)

    Larralde, A.L. [INQUIMAE, Departamento de Quimica Inorganica, Analitica y Quimica Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Ramos, C.P. [Departamento de Fisica de la Materia Condensada, GIyA - CAC - CNEA, Av. Gral. Paz 1499 (1650), San Martin, Bs. As. (Argentina); Arcondo, B. [Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires, Av. Paseo Colon 850 (C1063ACV), Bs. As. (Argentina); Tufo, A.E. [INQUIMAE, Departamento de Quimica Inorganica, Analitica y Quimica Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina); Saragovi, C. [Departamento de Fisica de la Materia Condensada, GIyA - CAC - CNEA, Av. Gral. Paz 1499 (1650), San Martin, Bs. As. (Argentina); Sileo, E.E., E-mail: sileo@qi.fcen.uba.ar [INQUIMAE, Departamento de Quimica Inorganica, Analitica y Quimica Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires (Argentina)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer Pure and tin-doped goethites were synthesized from Sn(II) solutions at ambient pressure and 70 Degree-Sign C. Black-Right-Pointing-Pointer The Rietveld refinement of PXRD data indicated that Sn partially substituted the Fe(III) ions. Black-Right-Pointing-Pointer The substitution provoked unit cell expansion, and a distortion of the coordination polyhedron. Black-Right-Pointing-Pointer {sup 119}Sn Moessbauer spectroscopy revealed that Sn(II) is incorporated as Sn(IV). Black-Right-Pointing-Pointer {sup 57}Fe Moessbauer spectroscopy showed a lower magnetic coupling as tin concentration increased. - Abstract: Tin-doped goethites obtained by a simple method at ambient pressure and 70 Degree-Sign C were characterized by inductively coupled plasma atomic emission spectrometry, scanning electron microscopy, Rietveld refinement of powder X-ray diffraction data, and {sup 57}Fe and {sup 119}Sn Moessbauer spectroscopy. The particles size and the length to width ratios decreased with tin-doping. Sn partially substituted the Fe(III) ions provoking unit cell expansion and increasing the crystallinity of the particles with enlarged domains that grow in the perpendicular and parallel directions to the anisotropic broadening (1 1 1) axis. Intermetallic E, E Prime and DC distances also change although the variations are not monotonous, indicating different variations in the coordination polyhedron. In general, the Sn-substituted samples present larger intermetallic distances than pure goethite, and the greatest change is shown in the E Prime distance which coincides with the c-parameter. {sup 119}Sn Moessbauer spectroscopy revealed that Sn(II) is incorporated as Sn(IV) in the samples. On the other hand, Fe(II) presence was not detected by {sup 57}Fe Moessbauer spectroscopy, suggesting the existence of vacancies in the Sn-doped samples. A lower magnetic coupling is also evidenced from the average magnetic hyperfine field values obtained as tin

  13. GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.

    2018-01-01

    We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

  14. Multiple x-ray diffraction applied to the study of crystal impurities

    International Nuclear Information System (INIS)

    Cardoso, L.P.

    1983-06-01

    The x-ray multiple diffraction technique is used in the study of impurities concentration and localization in the crystal lattice, implemented with the fundamental observation that the impurities cannot be distributed with the same spatial group symmetry of the crystal. This fact could introduce scattered intensity in the crystal reciprocal lattice forbidden nodes. This effect was effectively observed in multiple diffraction diagrams, where a reinforcement of the scattered intensity in the pure crystal is produced, when choosing conveniently the involved reflections. The reflectivity theory was developed in the kinematic case, which take into account the scattering by the impurities atoms, and the analysis showed that, in the first approximation, the impurities can influence both in the allowed and forbidden positions for the pure crystal. (L.C.J.A.)

  15. Oxygen control systems and impurity purification in LBE: Learning from DEMETRA project

    Energy Technology Data Exchange (ETDEWEB)

    Brissonneau, L., E-mail: laurent.brissonneau@cea.fr [CEA/DEN, Cadarache, DTN/STPA/LIPC, F-13108 Saint-Paul-lez-Durance (France); Beauchamp, F.; Morier, O. [CEA/DEN, Cadarache, DTN/STPA/LIPC, F-13108 Saint-Paul-lez-Durance (France); Schroer, C.; Konys, J. [Karlsruher Institut fuer Technologie (KIT), Institut fuer Materialforschung III, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Kobzova, A.; Di Gabriele, F. [NRI, UJV Husinec-Rez 130, Rez 25068 (Czech Republic); Courouau, J.-L. [CEA/DEN, Saclay, DPC/SCCME/LECNA, F-919191 Gif-sur-Yvette (France)

    2011-08-31

    Operating a system using Lead-Bismuth Eutectic (LBE) requires a control of the dissolved oxygen concentration to avoid corrosion of structural materials and oxide build-up in the coolant. Reliable devices are therefore needed to monitor and adjust the oxygen concentration and to remove impurities during operation. In this article, we describe the learning gained from experiments run in the framework of the DEMETRA project (IP-EUROTRANS 6th FP contract) on the oxygen supply in LBE and on impurity filtration and management in different European facilities. An oxygen control device should supply oxygen in LBE at sufficient rate to compensate loss by surface oxidation, otherwise local dissolution of oxide layers might lead to the loss of steel protection against dissolution. Oxygen can be supplied by gas phase H{sub 2}O or O{sub 2}, or by solid phase, PbO dissolution. Each of these systems has substantial advantages and drawbacks. Considerations are given on devices for large scale facilities. The management of impurities (lead oxides and corrosion products) is also a crucial issue as their presence in the liquid phase or in the aerosols is likely to impair the facility, instrumentation and mechanical devices. To avoid impurity build-up on the long-term, purification of LBE is required to keep the impurity inventory low by trapping oxide and metallic impurities in specific filter units. On the basis of impurities characterisation and experimental results gained through filtration tests in different loops, this paper gives a description of the state-of-art knowledge of LBE purification with different filter media. It is now understood that the nature and behaviour of impurities formed in LBE will change according to the operating modes as well as the method to propose to remove impurities. This experience can be used to validate the basis filtration process, define the operating procedures and evaluate perspectives for the design of purification units for long

  16. Hyperfine and ion beam interaction studies of Sn, Te, I and Sm impurities in silicon

    International Nuclear Information System (INIS)

    Kemerink, G.J.

    1981-01-01

    In this thesis the author reports investigations on ion implanted and oven or laser annealed silicon using Moessbauer spectroscopy, Rutherford backscattering (RBS) and channeling, time differential perturbed angular correlation and the Hall-effect. Chapter 1 gives an introduction to this field of research. Chapter 2 deals with an outline of the experimental methods used throughout this work. In chapter 3 results are presented from RBS and channeling experiments on Te-implanted Si. Chapters 4 and 5 concern the results from a study of dopant dependent effects in laser annealed TeSi using 119 Sn, 125 Te and 129 I-Moessbauer spectroscopy. Chapter 6 gives the results from a study of as-implanted and oven annealed TeSi using 129 I-time differential perturbed angular correlation and 129 I-Moessbauer spectroscopy. Chapter 7 describes the results from RBS and channeling experiments on oven and laser annealed ISi. Chapter 8 deals with Hall-effect measurements on TeSi and ISi. Chapter 9 finally covers the investigations of 153 Sm-implanted diamond, Si, Ge and α-Sn using channeling and 153 Eu-Moessbauer spectroscopy. (Auth.)

  17. Modeling of soluble impurities distribution in the steam generator secondary water

    International Nuclear Information System (INIS)

    Matal, O.; Simo, T.; Kucak, L.; Urban, F.

    1997-01-01

    A model was developed to compute concentration of impurities in the WWER 440 steam generator (SG) secondary water along the tube bundle. Calculated values were verified by concentration values obtained from secondary water sample chemical analysis. (orig.)

  18. Effect of a Nitrogen Impurity on the Fundamental Raman Band of Diamond Single Crystals

    Science.gov (United States)

    Gusakov, G. A.; Samtsov, M. P.; Voropay, E. S.

    2018-05-01

    The effect of nitrogen defects in natural and synthetic diamond single crystals on the position and half-width of the fundamental Raman band was investigated. Samples containing the main types of nitrogen lattice defects at impurity contents of 1-1500 ppm were studied. The parameters of the Stokes and anti-Stokes components in Raman spectra of crystals situated in a cell with distilled water to minimize the influence of heating by the exciting laser radiation were analyzed to determine the effect of a nitrogen impurity in the diamond crystal lattice. It was shown that an increase of impurity atoms in the crystals in the studied concentration range resulted in broadening of the Raman band from 1.61 to 2.85 cm-1 and shifting of the maximum to lower frequency from 1332.65 to 1332.3 cm-1. The observed effect was directly proportional to the impurity concentration and depended on the form of the impurity incorporated into the diamond lattice. It was found that the changes in the position and half-width of the fundamental Raman band for diamond were consistent with the magnitude of crystal lattice distortions due to the presence of impurity defects and obeyed the Gruneisen law.

  19. Structural and optical characterization of p-type highly Fe-doped SnO2 thin films and tunneling transport on SnO2:Fe/p-Si heterojunction

    Science.gov (United States)

    Ben Haj Othmen, Walid; Ben Hamed, Zied; Sieber, Brigitte; Addad, Ahmed; Elhouichet, Habib; Boukherroub, Rabah

    2018-03-01

    Nanocrystalline highly Fe-doped SnO2 thin films were prepared using a new simple sol-gel method with iron amounts of 5, 10, 15 and 20%. The obtained gel offers a long durability and high quality allowing to reach a sub-5 nm nanocrystalline size with a good crystallinity. The films were structurally characterized through X-ray diffraction (XRD) that confirms the formation of rutile SnO2. High Resolution Transmission Electron Microscopy (HRTEM) images reveals the good crystallinity of the nanoparticles. Raman spectroscopy shows that the SnO2 rutile structure is maintained even for high iron concentration. The variation of the PL intensity with Fe concentration reveals that iron influences the distribution of oxygen vacancies in tin oxide. The optical transmittance results indicate a redshift of the SnO2 band gap when iron concentration increases. The above optical results lead us to assume the presence of a compensation phenomenon between oxygen vacancies and introduced holes following Fe doping. From current-voltage measurements, an inversion of the conduction type from n to p is strongly predicted to follow the iron addition. Electrical characterizations of SnO2:Fe/p-Si and SnO2:Fe/n-Si heterojunctions seem to be in accordance with this deduction. The quantum tunneling mechanism is expected to be important at high Fe doping level, which was confirmed by current-voltage measurements at different temperatures. Both optical and electrical properties of the elaborated films present a particularity for the same iron concentration and adopt similar tendencies with Fe amount, which strongly correlate the experimental observations. In order to evaluate the applicability of the elaborated films, we proceed to the fabrication of the SnO2:Fe/SnO2 homojunction for which we note a good rectifying behavior.

  20. Conduction-type control of SnSx films prepared by the sol–gel method for different sulfur contents

    International Nuclear Information System (INIS)

    Huang, Chung-Cheng; Lin, Yow-Jon; Chuang, Cheng-Yu; Liu, Chia-Jyi; Yang, Yao-Wei

    2013-01-01

    Highlights: ► The effect of S content on the electrical property of the SnS x film was examined. ► For S-rich films, the probability of having formed Sn vacancies (V Sn ) should be high. ► Transformation from V Sn to V Sn 2- is accompanied by lattice relaxation. ► Transformation from Sn 2+ to Sn 4+ is an offset to lattice relaxation. ► A link between the conduction type and defects was established. -- Abstract: The effect of S content on the electrical property of the sol–gel SnS x films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn 4+ and Sn 2+ . The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn 4+ /(Sn 4+ + Sn 2+ ) in the S-rich film. The probability of having formed Sn vacancies (V Sn ) should be high under S-rich growth conditions. Transformation from V Sn to V Sn 2- is accompanied by lattice relaxation. Therefore, transformation from Sn 2+ to Sn 4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnS x

  1. Polarographic determination of Sn (II) and total Sn in PYRO and MDP radiopharmaceutical kits

    International Nuclear Information System (INIS)

    Sebastian, Maria V.A.; Lugon, Marcelo Di M.V.; Silva, Jose L. da; Fukumori, Neuza T.O.; Pereira, Nilda P.S. de; Silva, Constancia P.G. da; Matsuda, Margareth M.N.

    2007-01-01

    A sensitive, alternative method to atom absorption spectrometry, fluorimetry or potentiometry for the evaluation of tin(II) ions (0.1- 10 mg) and total tin in radiopharmaceutical kits was investigated. Differential pulse polarography was chosen. The supporting electrolyte was H 2 SO 4 3 mol L -1 and HCl 3 mol L -1 solution. The potential was swept from -250 to -800 mV vs Ag/AgCl/saturated KCl, using a dropping mercury electrode with 1 s drop time, 50 mV s -1 scan rate, -50 mV pulse amplitude, 40 ms pulse time and 10 mV step amplitude. Pure nitrogen was used to deaerate the polarographic cell solution for 5 min, before and after each sample introduction. Oxidation of Sn(II) was made in the same sample vial by adding H 2 O 2 (hydrogen peroxide) 10 mol L -1 , at 37 deg C, in order to quantify the total Sn. The calibration curve for Sn(II) and Sn(IV) was obtained in the concentration range of 0-10 ppm from a 1000 ppm standard solution. The detection limit of Sn(II) is 0.5 ppm and for Sn(IV) is 0.6 ppm. Differential pulse polarography was performed in the pyrophosphate (PYRO) and methylenediphosphonic acid (MDP) radiopharmaceutical kits, containing 2 mg and 1 mg of SnCl 2 .2H 2 O per vial, respectively. The described method for determination of stannous ion (Sn(II)), is selective, reproducible and adequate to be used in the quality control of lyophilized reagents and it shall be performed for other cold kits produced at IPEN. (author)

  2. Analysis of impurity effect on Silicide fuels of the RSG-GAS core

    International Nuclear Information System (INIS)

    Tukiran-Surbakti

    2003-01-01

    Simulation of impurity effect on silicide fuel of the RSG-GAS core has been done. The aim of this research is to know impurity effect of the U-234 and U-236 isotopes in the silicide fuels on the core criticality. The silicide fuels of 250 g U loading and 19.75 of enrichment is used in this simulation. Cross section constant of fuels and non-structure material of core are generated by WIMSD/4 computer code, meanwhile impurity concentration was arranged from 0.01% to 2%. From the result of analysis can be concluded that the isotopes impurity in the fuels could make trouble in the core and the core can not be operated at critical after a half of its cycle length (350 MW D)

  3. Modeling of soluble impurities distribution in the steam generator secondary water

    Energy Technology Data Exchange (ETDEWEB)

    Matal, O.; Simo, T. [Energovyzkum s.r.o., Brno (Switzerland); Kucak, L.; Urban, F. [Slovak Technical Univ., Bratislava (Slovakia)

    1997-12-31

    A model was developed to compute concentration of impurities in the WWER 440 steam generator (SG) secondary water along the tube bundle. Calculated values were verified by concentration values obtained from secondary water sample chemical analysis. (orig.). 2 refs.

  4. Modeling of soluble impurities distribution in the steam generator secondary water

    Energy Technology Data Exchange (ETDEWEB)

    Matal, O; Simo, T [Energovyzkum s.r.o., Brno (Switzerland); Kucak, L; Urban, F [Slovak Technical Univ., Bratislava (Slovakia)

    1998-12-31

    A model was developed to compute concentration of impurities in the WWER 440 steam generator (SG) secondary water along the tube bundle. Calculated values were verified by concentration values obtained from secondary water sample chemical analysis. (orig.). 2 refs.

  5. Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

    International Nuclear Information System (INIS)

    Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

    2006-01-01

    Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

  6. Effect of homologous impurities on primary radiation defect accumulation in alkali halides

    International Nuclear Information System (INIS)

    Chernov, S.A.; Gavrilov, V.V.

    1981-01-01

    To clarify the mechanism of the effect of anion and cation homologous impurities on the primary radiation-induced defect accumulation, the transient absorption of H and F centers was studied in KCl and KBr crystals. Pulse electron accelerator technique was used. Pure and doped crystals were investigated. It was obtained that the cation homologue Na in the concentration range from 0 to 0.5 m. % in 10 -8 -10 -6 s post-irradiation time has no effect on the defect accumulation efficiency at low temperature and increases the latter at high temperature. At large post-irradiation time and at high temperatures the rise of efficiency at low Na concentration and decrease of it at high Na concentrations were observed. The conclusion was made that Na does not affect the generation process. The anion homologous impurities (I and Br) lead to a significant increase of the accumulation efficiency due to the formation of more stable F-H pair at self-trapped exciton decay on anion impurities compared with that formed in perfect lattice. Some assumptions are advanced to explain the effect [ru

  7. Experimental tests of LiSn alloys as potential liquid metal for the divertor target in a fusion reactor

    Directory of Open Access Journals (Sweden)

    F.L. Tabarés

    2017-08-01

    Full Text Available The first experiments of exposure of a LiSn alloy (Li/Sn atomic ratio= 20/80 to a hydrogen plasma in TJ-II are here presented. Solid and liquid samples have been inserted at the edge and evidence of sample melting of a solid sample during plasma exposure has been observed. A negligible perturbation of the plasma has been recorded, even when stellarator plasmas are particularly sensitive to high Z elements due to the tendency to central impurity accumulation. Melting of the sample by the plasma thermal load did not lead to any deleterious effect on the plasma performance. Strong lithium emission was detected at the LiSn sample but no sign of Sn contamination and low values of Zeff and radiated power were deduced. Hydrogen recycling was studied at two different temperatures and no change was detected in the range of 300–750K. The retention of H2 by the alloy was addressed in separate experiments at the laboratory. Values in the order of 0.01% H/(Sn+Li were deduced in agreement with in situ TDS analysis of the plasma exposed samples and previous reports.

  8. Effects of quenched impurities on surface diffusion, spreading, and ordering of O/W(110)

    DEFF Research Database (Denmark)

    Nikunen, P.; Vattulainen, Ilpo Tapio; Ala-Nissila, T.

    2002-01-01

    We study how quenched impurities affect the surface diffusion and ordering of strongly interacting adsorbate atoms on surfaces. To this end, we carry out Monte Carlo simulations for a lattice-gas model of O/W(110), including small concentrations of immobile impurities which block their adsorption...

  9. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo

    2017-05-22

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

  10. Ex situ n+ doping of GeSn alloys via non-equilibrium processing

    Science.gov (United States)

    Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

    2018-06-01

    Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

  11. The crystal structure of (Nb$_{0.75}$Cu$_{0.25}$)Sn$_{2}$ in the Cu-Nb-Sn system

    CERN Document Server

    Martin, Stefan; Nolze, Gert; Leineweber, Andreas; Leaux, Floriane; Scheuerlein, Christian

    2017-01-01

    During the processing of superconducting Nb$_{3}$Sn wire, several intermediate intermetallic phases including a previously encountered Cu-Nb-Sn phase show up. The yet unknown crystal structure of this phase is now identified by a combination of different experimental techniques and database search to be of the hexagonal NiMg2 type with a proposed composition of about (Nb0.75Cu0.25)Sn2. The structure determination started from an evaluation of the lattice parameters from EBSD Kikuchi patterns from quenched material suggesting hexagonal or orthorhombic symmetry. A database search then led to the hexagonal NiMg2 type structure, the presence of which was confirmed by a Rietveld analysis on the basis of high energy synchrotron X-ray powder diffraction data. Assuming a partial substitution of Nb in orthorhombic NbSn2 by Cu, the change of the valence electron concentration provokes a structural transformation from the CuMg2 type for NbSn2 to the NiMg2 type for (Nb0.75Cu0.25)Sn2. In the previous literature the (Nb0.7...

  12. Impact of protein and ligand impurities on ITC-derived protein-ligand thermodynamics.

    Science.gov (United States)

    Grüner, Stefan; Neeb, Manuel; Barandun, Luzi Jakob; Sielaff, Frank; Hohn, Christoph; Kojima, Shun; Steinmetzer, Torsten; Diederich, François; Klebe, Gerhard

    2014-09-01

    The thermodynamic characterization of protein-ligand interactions by isothermal titration calorimetry (ITC) is a powerful tool in drug design, giving valuable insight into the interaction driving forces. ITC is thought to require protein and ligand solutions of high quality, meaning both the absence of contaminants as well as accurately determined concentrations. Ligands synthesized to deviating purity and protein of different pureness were titrated by ITC. Data curation was attempted also considering information from analytical techniques to correct stoichiometry. We used trypsin and tRNA-guanine transglycosylase (TGT), together with high affinity ligands to investigate the effect of errors in protein concentration as well as the impact of ligand impurities on the apparent thermodynamics. We found that errors in protein concentration did not change the thermodynamic properties obtained significantly. However, most ligand impurities led to pronounced changes in binding enthalpy. If protein binding of the respective impurity is not expected, the actual ligand concentration was corrected for and the thus revised data compared to thermodynamic properties obtained with the respective pure ligand. Even in these cases, we observed differences in binding enthalpy of about 4kJ⋅mol(-1), which is considered significant. Our results indicate that ligand purity is the critical parameter to monitor if accurate thermodynamic data of a protein-ligand complex are to be recorded. Furthermore, artificially changing fitting parameters to obtain a sound interaction stoichiometry in the presence of uncharacterized ligand impurities may lead to thermodynamic parameters significantly deviating from the accurate thermodynamic signature. Copyright © 2014 Elsevier B.V. All rights reserved.

  13. Role of impurity dynamics in resistivity-gradient-driven turbulence and tokamak edge plasma phenomena

    International Nuclear Information System (INIS)

    Hahm, T.S.; Diamond, P.H.; Terry, P.W.; Garcia, L.; Carreras, B.A.

    1986-03-01

    The role of impurity dynamics in resistivity gradient driven turbulence is investigated in the context of modeling tokamak edge plasma phenomena. The effects of impurity concentration fluctuations and gradients on the linear behavior of rippling instabilities and on the nonlinear evolution and saturation of resistivity gradient driven turbulence are studied both analytically and computationally. At saturation, fluctuation levels and particle and thermal diffusivities are calculated. In particular, the mean-square turbulent radial velocity is given by 2 > = (E 0 L/sub s/B/sub z/) 2 (L/sub/eta/ -1 + L/sub z -1 ) 2 . Thus, edged peaked impurity concentrations tend to enhance the turbulence, while axially peaked concentrations tend to quench it. The theoretical predictions are in semi-quantitative agreement with experimental results from the TEXT, Caltech, and Tosca tokamaks. Finally, a theory of the density clamp observed during CO-NBI on the ISX-B tokamak is proposed

  14. Structural, optical and thermal characterization of PVC/SnO2 nanocomposites

    Science.gov (United States)

    Taha, T. A.; Ismail, Z.; Elhawary, M. M.

    2018-04-01

    The structural, optical, and thermal properties of PVC/SnO2 nanocomposites were investigated. XRD patterns were used to explore the structures of these prepared samples. Optical UV-Vis measurements were analyzed to calculate the spectroscopic optical constants of the prepared PVC/SnO2 nanocomposites. Both direct and indirect optical band gaps decreased with increasing SnO2 content. The refractive index, high frequency dielectric constant, plasma frequency, and optical conductivity values increased with SnO2. The single oscillator energy increased from 5.64 to 10.97 eV and the dispersion energy increased from 6.35 to 19.80 eV with the addition of SnO2. The other optical parameters such as optical moments, single oscillator strength, volume energy loss, and surface energy loss were calculated for different SnO2 concentrations. Raman spectra of the PVC/SnO2 nanocomposite films revealed the characteristic vibrational modes of PVC and surface phonon modes of SnO2. The thermal stability of PVC/SnO2 nanocomposite films was studied using DTA and thermogravimetric analysis. The glass transition ( T g) values abruptly changed from 46 °C for PVC to an average value of 59 °C for the polymer films doped with 2.0, 4.0, and 6.0 wt% SnO2. The weight loss decreased as the SnO2 concentration increased in the temperature range of 350-500 °C, corresponding to enhanced thermal stability.

  15. Monte-Carlo Impurity transport simulations in the edge of the DIII-D tokamak using the MCI code

    International Nuclear Information System (INIS)

    Evans, T.E.; Mahdavi, M.A.; Sager, G.T.; West, W.P.; Fenstermacher, M.E.; Meyer, W.H.; Porter, G.D.

    1995-07-01

    A Monte-Carlo Impurity (MCI) transport code is used to follow trace impurities through multiple ionization states in realistic 2-D tokamak geometries. The MCI code is used to study impurity transport along the open magnetic field lines of the Scrape-off Layer (SOL) and to understand how impurities get into the core from the SOL. An MCI study concentrating on the entrainment of carbon impurities ions by deuterium background plasma into the DIII-D divertor is discussed. MCI simulation results are compared to experimental DIII-D carbon measurements

  16. Monte-Carlo Impurity transport simulations in the edge of the DIII-D tokamak using the MCI code

    International Nuclear Information System (INIS)

    Evans, T.E.; Sager, G.T.; Mahdavi, M.A.; Porter, G.D.; Fenstermacher, M.E.; Meyer, W.H.

    1995-01-01

    A Monte-Carlo Impurity (MCI) transport code is used to follow trace impurities through multiple ionization states in realistic 2-D tokamak geometries. The MCI code is used to study impurity transport along the open magnetic field lines of the Scrape-off Layer (SOL) and to understand how impurities get into the core from the SOL. An MCI study concentrating on the entrainment of carbon impurities ions by deuterium background plasma into the DII-D divertor is discussed. MCI simulation results are compared to experimental DII-D carbon measurements. 2 refs

  17. Integrable quantum impurity models

    International Nuclear Information System (INIS)

    Eckle, H.P.

    1998-01-01

    By modifying some of the local L operators of the algebraic form of the Bethe Ansatz inhomogeneous one dimensional quantum lattice models can be constructed. This fact has recently attracted new attention, the inhomogeneities being interpreted as local impurities. The Hamiltonians of the so constructed one-dimensional quantum models have a nearest neighbour structure except in the vicinity of the local impurities which involve three-site interactions. The pertinent feature of these models is the absence of backscattering at the impurities: the impurities are transparent. (Copyright (1998) World Scientific Publishing Co. Pte. Ltd)

  18. Impurity Effects in Electroplated-Copper Solder Joints

    Directory of Open Access Journals (Sweden)

    Hsuan Lee

    2018-05-01

    Full Text Available Copper (Cu electroplating is a mature technology, and has been extensively applied in microelectronic industry. With the development of advanced microelectronic packaging, Cu electroplating encounters new challenges for atomic deposition on a non-planar substrate and to deliver good throwing power and uniform deposit properties in a high-aspect-ratio trench. The use of organic additives plays an important role in modulating the atomic deposition to achieve successful metallic coverage and filling, which strongly relies on the adsorptive and chemical interactions among additives on the surface of growing film. However, the adsorptive characteristic of organic additives inevitably results in an incorporation of additive-derived impurities in the electroplated Cu film. The incorporation of high-level impurities originating from the use of polyethylene glycol (PEG and chlorine ions significantly affects the microstructural evolution of the electroplated Cu film, and the electroplated-Cu solder joints, leading to the formation of undesired voids at the joint interface. However, the addition of bis(3-sulfopropyl disulfide (SPS with a critical concentration suppresses the impurity incorporation and the void formation. In this article, relevant studies were reviewed, and the focus was placed on the effects of additive formula and plating parameters on the impurity incorporation in the electroplated Cu film, and the void formation in the solder joints.

  19. VARIABILITY STUDY TO DETERMINE THE SOLUBILITY OF IMPURITIES IN PLUTONIUM-BEARING, LANTHANIDE BOROSILICATE GLASS

    Energy Technology Data Exchange (ETDEWEB)

    Fox, K; Elizabeth Hoffman, E; Charles Crawford, C; Tommy Edwards, T; David Best, D; James Marra, J

    2007-09-26

    This study focuses on the development of a compositional envelope that describes the retention of various impurities in lanthanide borosilicate (LaBS) glass for vitrification and immobilization of excess, defense-related plutonium. A limited amount of impurity data for the various plutonium sources is available and projections were made through analysis of the available information. These projections were used to define types and concentrations of impurities in the LaBS glass compositions to be fabricated and tested. Sixty surrogate glass compositions were developed through a statistically designed approach to cover the anticipated ranges of concentrations for several impurity species expected in the plutonium feeds. An additional four glass compositions containing actual plutonium oxide were selected based on their targeted concentrations of metals and anions. The glasses were fabricated and characterized in the laboratory and shielded cells facility to determine the degree of retention of the impurity components, the impact of the impurities on the durability of each glass, and the degree of crystallization that occurred, both upon quenching and slow cooling. Overall, the LaBS glass system appears to be very tolerant of most of the impurity types and concentrations projected in the plutonium waste stream. For the surrogate glasses, the measured CuO, Ga{sub 2}O{sub 3}, Na{sub 2}O, NiO, and Ta{sub 2}O{sub 5} concentrations fell very close to their target values across the ranges of concentrations targeted in this study for each of these components. The measured CaO and PbO concentrations were consistently higher than the targeted values. The measured Cr{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} concentrations were very close to the targets except for the one highest targeted value for each of these components. A solubility limit may have been approached in this glass system for K{sub 2}O and MgO. The measured Cl{sup -}, F{sup -}, SeO{sub 2} and SO{sub 4}{sup 2

  20. Characterization of impurities in biogas before and after upgrading to vehicle fuel

    Energy Technology Data Exchange (ETDEWEB)

    Arrhenius, Karine; Johansson, Ulrika [SP Technical Research Institute of Sweden, Boraas (Sweden)

    2012-01-15

    Biogases produced by digesting organic wastes, residual sludge from waste water treatment, energy crops,byproducts from industry or in landfills contain impurities which can be harmful for components that will be in contact with the biogas during its utilization. In this project, the impurities present in biogases have been mapped out depending upon which feedstock is digested. P-cymene och D-limonene, two terpenes, have been found to be characteristics for biogases produced from the digestion of waste including household wastes while an 'oil' fraction containing alkanes with 9 to 13 carbon atoms is characteristic for biogases produced at waste water treatment plants. Ketones and sulfur compounds are found in biogases produced from the digestion of food industry wastes or energy crops. It was not possible to characterize impurities in biogases produced in farm plants digesting manure because not enough samples were analyzed from these plants. In order to understand the relation between the feedstock and the impurities present in the biogas, an extensive study on feedstock characterization must be conducted. One question to be answered is if these impurities only originate from the volatilization from the feedstock and in this case, why only these specific compounds are found at significant concentrations. In this study we have also studied how effective purification/upgrading techniques are to remove impurities that have been identified in biogases. En general comment is that the upgraded gas still contains a part of the characteristic impurities which have been identified for each feedstock at different levels of concentration depending on which technique has been used. The results show that activated carbon filters are more or less effective. Some of them can remove more than 90 % of the impurities while others remove less that 10 %. Results show also that the amine scrubber have very moderate effects on the impurities composition. In that case, the

  1. Impurities block the alpha to omega martensitic transformation in titanium.

    Science.gov (United States)

    Hennig, Richard G; Trinkle, Dallas R; Bouchet, Johann; Srinivasan, Srivilliputhur G; Albers, Robert C; Wilkins, John W

    2005-02-01

    Impurities control phase stability and phase transformations in natural and man-made materials, from shape-memory alloys to steel to planetary cores. Experiments and empirical databases are still central to tuning the impurity effects. What is missing is a broad theoretical underpinning. Consider, for example, the titanium martensitic transformations: diffusionless structural transformations proceeding near the speed of sound. Pure titanium transforms from ductile alpha to brittle omega at 9 GPa, creating serious technological problems for beta-stabilized titanium alloys. Impurities in the titanium alloys A-70 and Ti-6Al-4V (wt%) suppress the transformation up to at least 35 GPa, increasing their technological utility as lightweight materials in aerospace applications. These and other empirical discoveries in technological materials call for broad theoretical understanding. Impurities pose two theoretical challenges: the effect on the relative phase stability, and the energy barrier of the transformation. Ab initio methods calculate both changes due to impurities. We show that interstitial oxygen, nitrogen and carbon retard the transformation whereas substitutional aluminium and vanadium influence the transformation by changing the d-electron concentration. The resulting microscopic picture explains the suppression of the transformation in commercial A-70 and Ti-6Al-4V alloys. In general, the effect of impurities on relative energies and energy barriers is central to understanding structural phase transformations.

  2. Modeling of the Microchemistry for Diffusion of Selected Impurities in Uranium

    International Nuclear Information System (INIS)

    Kirkpatrick, J. R.; Bullock, J.S. IV

    2001-01-01

    Unalloyed metallic uranium used in some work done at Y-12 contains small quantities of impurities, the three most significant of which are carbon, iron, and silicon. During metallurgical processing, as the metal cools from a molten condition towards room temperature, the metallic matrix solution becomes supersaturated in each of the impurities whose concentration exceeds the solubility limit. Many impurity atoms form compounds with uranium that precipitate out of the solution, thus creating and growing inclusions. The objective of the present work is to study the distribution of impurity atoms about some of the inclusions, with a view toward examining the effect of the interaction between inclusions on the impurity atom distribution. The method used is time-dependent mass diffusion from the supersaturated solution to the surfaces of the inclusions. Micrographs of metal samples suggest that the inclusions form in successive stages. After each inclusion forms, it begins to draw impurity atoms from its immediate vicinity, thus altering the amounts and distributions of impurity atoms available for formation and growth of later inclusions. In the present work, a one-dimensional spherical approximation was used to simulate inclusions and their regions of influence. A first set of calculations was run to simulate the distribution of impurity atoms about the largest inclusions. Then, a second set of calculations was run to see how the loss of impurity atoms to the largest inclusions might affect the distribution of impurity atoms around the next stage of inclusions. Plots are shown for the estimated distributions of impurity atoms in the region of influence about the inclusions for the three impurities studied. The authors believe that these distributions are qualitatively correct. However, there is enough uncertainty about precisely when inclusions nucleate and begin to grow that one should not put too much reliance on the quantitative results. This work does provide a

  3. Magnetoresistance and phase composition of La-Sn-Mn-O systems

    DEFF Research Database (Denmark)

    Li, Z.W.; Morrish, A.H.; Jiang, Jianzhong

    1999-01-01

    The transport properties of the manganites La1 - xSnxMnO3 + delta with x = 0.1-0.5 and of Fe-doped samples have been comprehensively studied using magnetoresistance measurements, Fe-57 and Sn-119 Mossbauer spectroscopy, and x-ray diffraction. At the Sn concentration x = 0.5, La0.5Sn0.5MnO3 + delta...

  4. Sensitivity enhancement by chromatographic peak concentration with ultra-high performance liquid chromatography-nuclear magnetic resonance spectroscopy for minor impurity analysis.

    Science.gov (United States)

    Tokunaga, Takashi; Akagi, Ken-Ichi; Okamoto, Masahiko

    2017-07-28

    High performance liquid chromatography can be coupled with nuclear magnetic resonance (NMR) spectroscopy to give a powerful analytical method known as liquid chromatography-nuclear magnetic resonance (LC-NMR) spectroscopy, which can be used to determine the chemical structures of the components of complex mixtures. However, intrinsic limitations in the sensitivity of NMR spectroscopy have restricted the scope of this procedure, and resolving these limitations remains a critical problem for analysis. In this study, we coupled ultra-high performance liquid chromatography (UHPLC) with NMR to give a simple and versatile analytical method with higher sensitivity than conventional LC-NMR. UHPLC separation enabled the concentration of individual peaks to give a volume similar to that of the NMR flow cell, thereby maximizing the sensitivity to the theoretical upper limit. The UHPLC concentration of compound peaks present at typical impurity levels (5.0-13.1 nmol) in a mixture led to at most three-fold increase in the signal-to-noise ratio compared with LC-NMR. Furthermore, we demonstrated the use of UHPLC-NMR for obtaining structural information of a minor impurity in a reaction mixture in actual laboratory-scale development of a synthetic process. Using UHPLC-NMR, the experimental run times for chromatography and NMR were greatly reduced compared with LC-NMR. UHPLC-NMR successfully overcomes the difficulties associated with analyses of minor components in a complex mixture by LC-NMR, which are problematic even when an ultra-high field magnet and cryogenic probe are used. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. 51Cr diffusion in Zr-Sn alloys

    International Nuclear Information System (INIS)

    Nicolai, L.I.; Migoni, R.L.; Hojvat de Tendler, Ruth

    1982-01-01

    The 51 Cr volume diffusion in Zr-Sn alloys is measured in polycrystals with big grains by the thin-film method. The Sn content in the alloys ranges from 0.39% at to 6.66 % at. In the beta-phase the analysed temperature range is 982 deg C-1240 deg C. The Sn dehances the 51 Cr diffusion in beta-Zr, the effect being small but well defined. Assuming the formation of Sn-Cr dimers, the linear dehancement coefficient b and the parameters for the variation of b with temperature were calculated. The parameters Q and D o were calculated for the more diluted alloys and, upon application of the Zener theory for D o , a negative contribution to the activation entropy is found. Three experiments at different temperatures were performed in the alpha-phase. 51 Cr diffuses very fast in alpha-Zr-Sn. No definite correlation is found between the 51 Cr diffusivity and the increasing Sn concentration, probably due to the anisotropy of the alfa-phase. (M.E.L.) [es

  6. Quantitative determination of salbutamol sulfate impurities using achiral supercritical fluid chromatography.

    Science.gov (United States)

    Dispas, Amandine; Desfontaine, Vincent; Andri, Bertyl; Lebrun, Pierre; Kotoni, Dorina; Clarke, Adrian; Guillarme, Davy; Hubert, Philippe

    2017-02-05

    In the last years, supercritical fluid chromatography has largely been acknowledged as a singular and performing technique in the field of separation sciences. Recent studies highlighted the interest of SFC for the quality control of pharmaceuticals, especially in the case of the determination of the active pharmaceutical ingredient (API). Nevertheless, quality control requires also the determination of impurities. The objectives of the present work were to (i) demonstrate the interest of SFC as a reference technique for the determination of impurities in salbutamol sulfate API and (ii) to propose an alternative to a reference HPLC method from the European Pharmacopeia (EP) involving ion-pairing reagent. Firstly, a screening was carried out to select the most adequate and selective stationary phase. Secondly, in the context of robust optimization strategy, the method was developed using design space methodology. The separation of salbutamol sulfate and related impurities was achieved in 7min, which is seven times faster than the LC-UV method proposed by European Pharmacopeia (total run time of 50min). Finally, full validation using accuracy profile approach was successfully achieved for the determination of impurities B, D, F and G in salbutamol sulfate raw material. The validated dosing range covered 50 to 150% of the targeted concentration (corresponding to 0.3% concentration level), LODs close to 0.5μg/mL were estimated. The SFC method proposed in this study could be presented as a suitable fast alternative to EP LC method for the quantitative determination of salbutamol impurities. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  8. Impurities determination in uranium eluates by total reflection X-ray fluorescence

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Bellavigna, Horacio J.; Eppis, Maria R.; Ramella, Jose L.

    1999-01-01

    The chemical control of impurities in nuclear materials is indispensable in order to assure an efficient operation of the reactors. The maximum concentration admitted depends of the elements and in most cases are in the parts per billion range. Conventional analytical methods require a pre-concentration treatment of the sample and a previous separation of the matrix (uranium). This paper investigates the use of the total reflection X-ray fluorescence as an alternative methodology for the determination of impurities in nuclear materials, namely K, Ca, Ti, Cr, Mn, Fe, Ni, Cu and As. The detection limits obtained were in the range of 0.1 to 20 ng/ml for a 1000 seconds counting time. (author)

  9. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Science.gov (United States)

    Neogi, S. K.; Karmakar, R.; Misra, A. K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-11-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn1-xMnxO samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol-gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO3) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ1 and τ2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. Single phase structure has been observed up to 6 at% of Mn doping. Impurity phase has been developed above 6 at% of Mn doping. Antiferromagnetic and paramagnetic interactions are present in the samples. Defect parameters show sharp fall as Mn concentration above 6 at%. The magnetic and defect properties are modified by the formation of impurity phase.

  10. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    International Nuclear Information System (INIS)

    Neogi, S.K.; Karmakar, R.; Misra, A.K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-01-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn 1−x Mn x O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO 3 ) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ 1 and τ 2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase

  11. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Energy Technology Data Exchange (ETDEWEB)

    Neogi, S.K.; Karmakar, R. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Misra, A.K. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India); Das, D. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India)

    2013-11-15

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn{sub 1−x}Mn{sub x}O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO{sub 3}) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ{sub 1} and τ{sub 2} are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase.

  12. Mechanical properties of pure and doped InP single crystals under concentrated loading

    International Nuclear Information System (INIS)

    Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

    1997-01-01

    The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

  13. Radiation-stimulated yield of an impurity into interstitial sites in crystals KBr-Li and KCl-Li

    International Nuclear Information System (INIS)

    Bekeshev, A.Z.; Shunkeev, K.Sh.; Vasil'chenko, E.A.; Dauletbekova, A.K.; Ehlango, A.A.

    1996-01-01

    KCl and KBr crystals are taken as examples to show that the presence of Li impurity at X-radiation at temperatures above 200 K stimulates the creation of both impurity Hal 3 - (Li)-centers (V 4A -centers) and Hal 3 - centers (V 2 -centers). Increase of impurity concentration and X-radiation temperature (up to 300 K) results to increase of impurity stimulated creation of inherent Hal 3 - centers by more, than one order, as compared to pure crystals. Initial temperature of interstitial ion mobility was evaluated (about 140 K). 16 refs., 5 figs

  14. Study of sub band gap absorption of Sn doped CdSe thin films

    International Nuclear Information System (INIS)

    Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

    2014-01-01

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

  15. Study of sub band gap absorption of Sn doped CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

    2014-04-24

    The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

  16. Study of impurities in Aditya Tokamak during different conditions using quadrupole mass analyzer

    International Nuclear Information System (INIS)

    Bhatt, S.B.; Jadeja, K.A.; Patel, K.M.; Patel, N.D.; Raval, M.K.; Ghosh, J.

    2015-01-01

    In fusion devices, e.g., Tokamak, the presence of the impurities, i.e. gas species other than the fuel gas, deteriorates plasma and makes confinement difficult. The gas molecules tend to get adsorbed on the surfaces of the solid state materials of the vessel wall during discharges. A Residual Gas Analyzer (RGA) is the most commonly useful instrument to measure the presence and quantity of the various gases in a vacuum system. Quadrupole Mass Analyzer (QMA) is installed on Aditya Tokamak to measure the concentrations of various gas species present in Aditya vacuum system. It is also used to monitor impurities generated during various phases of discharges in Aditya Tokamak. The impurities are reduced by various types of discharge cleaning and in-situ coatings. Presence of residual gas concentration in vacuum system creates limitation for achievement of ultrahigh vacuum and also affects plasma performance. The presence of residual gases is due to different reasons like atmospheric concentration, contamination of the wall materials, outgassing from the exposed materials, permeation, real and virtual leaks

  17. Some particularities of impurity center structure in concentrated solid solutions MeF2-GdF3, where Me-Ca2+, Sr2+ and Ba2+

    International Nuclear Information System (INIS)

    Karelin, V.V.; Orlov, Yu.N.; Bozhevol'nov, V.E.; Ivanov, L.N.

    1981-01-01

    The monocrystalline CaF 2 -GdF 3 , SrF 2 -GdF 3 and BaF 2 -GdF 3 systems are studied using the methods of EPR, photo-, radio-, cathode- and thermoluminescence. It is shown that the structure of fluorite solid solutions changes considerably with the growth of the rare earth component concentration. At that, in the systems investigated at least three concentration regions can be singled out: (up to 1%; from 1 to 15%, and > 15% GdF 3 ) which are characterized by their certain selection of impurity centres [ru

  18. Impurity effects in neutron-irradiated simple oxides: Implications for fusion devices

    International Nuclear Information System (INIS)

    Gonzalez, R.; Chen, Y.; Caceres, D.; Vergara, I.

    2006-01-01

    Radiation damage induced by neutron irradiation was studied in undoped MgO crystals and in MgO doped with either iron, hydrogen or lithium impurities. The oxygen-vacancy concentration produced by irradiation increases with neutron fluence. The net production rates resulting from irradiations with 14.8 MeV neutrons are about twice those produced by fission neutrons. In nominally pure crystals, the oxygen-vacancy concentration incurred by the fission-neutron irradiation is higher in crystals with a larger number of inherent impurities (such as iron) due to trapping of interstitials by impurities. Suppression of these defects is observed in MgO:H crystals and attributed to migration of oxygen vacancies to microcavities filled with H 2 gas. In MgO:Li crystals irradiated with neutron fluences below 10 18 n/cm 2 , most of the oxygen vacancies are camouflaged as hydride ions. Nanoindentation experiments show that hardness increases with neutron fluence and is independent of the presence of lithium in the crystal. Comparison between a neutron-irradiated and a thermochemically reduced crystal containing similar concentrations of oxygen vacancies shows that 70% of the neutron-irradiation hardening is produced by interstitials, 30% by oxygen vacancies and a negligible amount by higher-order point defects

  19. Thin-source concentration dependent diffusion

    International Nuclear Information System (INIS)

    Eng, G.

    1978-01-01

    The diffusion of (Ca ++ ) in NaCl has been measured for various diffusion times and for the temperature range (575 0 to 775 0 C), using a thin-source of 45 Ca tracer, rectangular geometry, and serial sectioning. The pre-diffusion surface concentration was approximately 3 x 10 16 (Ca)-atoms/cm 2 , which, for an average penetration depth of 100 to 300 μm, produces a maximum (post-diffusion) impurity concentration comparable to or greater than the intrinsic cation vacancy concentration. The high-temperature function closely matches the D 0 (T) function obtained from low impurity concentration experiments. The lower-temperature function, combined with the sudden failure of the D(C) = D 0 (1 + [C] + 0.5[C] 2 ) function at these lower temperatures, indicates the onset of a second diffusion process, one which would operate only at extremely high impurity concentrations. This low-temperature behavior is shown to be consistent with a breakdown of the conditions assumed for vacancy equilibrium

  20. Occurrence and Characterization Microstructure of Iron Impurities in Halloysite.

    Science.gov (United States)

    Liu, Rong; Yan, Chunjie; Wang, Hongquan; Xiao, Guoqi; Tu, Dong

    2015-09-01

    The quality of the clays and over all halloysite are mostly associated with minor amounts of ferruginous impurities content, since this element gives an undesirable reddish color to the halloysite mineral. Hence, finding out the modes of occurrence of iron in halloysite is of prime importance in the value addition and optimum utilization of halloysite. In order to analyze the occurrence of iron impurities in halloysite, Transmission Electron Microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were combined with wet chemical analysis methods to study the low-grade halloysite. The results indicated that the mineral phases of iron impurities in the concentrates are mainly composed of amounts of magnetite, goethite and hematite. Two types of occurrences for iron impurities have been found. One is single crystalline mineral consist in the halloysite, which contains three different phases of Goethite FeO(OH) (44.75%), Magnetite Fe3O4 (27.43%) and Hematite Fe2O3 (31.96%). The other is amorphous Fe-Al-Si glial materials. This study is of significance in the theoretical research on the halloysite mineralogy and in the developmental practice of halloysite in coal measures.

  1. Numerical renormalization group calculation of impurity internal energy and specific heat of quantum impurity models

    Science.gov (United States)

    Merker, L.; Costi, T. A.

    2012-08-01

    We introduce a method to obtain the specific heat of quantum impurity models via a direct calculation of the impurity internal energy requiring only the evaluation of local quantities within a single numerical renormalization group (NRG) calculation for the total system. For the Anderson impurity model we show that the impurity internal energy can be expressed as a sum of purely local static correlation functions and a term that involves also the impurity Green function. The temperature dependence of the latter can be neglected in many cases, thereby allowing the impurity specific heat Cimp to be calculated accurately from local static correlation functions; specifically via Cimp=(∂Eionic)/(∂T)+(1)/(2)(∂Ehyb)/(∂T), where Eionic and Ehyb are the energies of the (embedded) impurity and the hybridization energy, respectively. The term involving the Green function can also be evaluated in cases where its temperature dependence is non-negligible, adding an extra term to Cimp. For the nondegenerate Anderson impurity model, we show by comparison with exact Bethe ansatz calculations that the results recover accurately both the Kondo induced peak in the specific heat at low temperatures as well as the high-temperature peak due to the resonant level. The approach applies to multiorbital and multichannel Anderson impurity models with arbitrary local Coulomb interactions. An application to the Ohmic two-state system and the anisotropic Kondo model is also given, with comparisons to Bethe ansatz calculations. The approach could also be of interest within other impurity solvers, for example, within quantum Monte Carlo techniques.

  2. A Simple and Direct LC-MS Method for Determination of Genotoxic Impurity Hydroxylamine in Pharmaceutical compounds.

    Science.gov (United States)

    Kumar, Thangarathinam; Ramya, Mohandass; Srinivasan, Viswanathan; Xavier, N

    2017-08-01

    Hydroxylamine is a known genotoxic impurity compound that needs to be controlled down to ppm level in pharmaceutical processes. It is difficult to detect using conventional analytical techniques due to its physio-chemical properties like lack of chromophore, low molecular weight, absence of carbon atom and high polarity. In addition to that, analysis of the pharmaceutical samples encounters considerable obstruction from matrix components that greatly overshadow the response of hydroxylamine. This study describes a simple, sensitive and direct Liquid Chromatographic-Mass Spectrometric method (LC-MS) for detection of hydroxylamine in pharmaceutical compounds. The LC-MS method was detected up to 0.008 ppm of hydroxylamine with S/N > 3.0 and quantified up to 0.025 ppm of hydroxylamine with S/N ratio >10.0. This validated method can be applied as a generic method to detect the hydroxylamine for pharmaceutical process control and drug substance release. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  3. The role of impurities on the process of growing potassium hydrogen phthalate crystals from solution; A quantitative approach

    Science.gov (United States)

    Hottenhuis, M. H. J.; Lucasius, C. B.

    1988-09-01

    Quantitative information about the influence of impurities on the crystal growth process of potassium hydrogen phthalate from its aqueous solution was obtained at two levels: microscopic and macroscopic. At the microscopic level, detailed in situ observations of spiral steps at the (010) face were performed. The velocity of these steps was measured, as well in a "clean" as in a contaminated solution, where the influence of a number of different impurities was investigated. This resulted in a measure of effectiveness of step retardation for each of these impurities. From the same microscopic observations it was observed how these effectiveness factors were influenced by the supersaturation σ, the saturation temperature Ts of the solution and the concentration cimp of the impurity that w as used. At the macroscopic level, ICP (inductively coupled plasma) measurements were carried out in order to determine the distribution coefficient of the same impurities. In these measurements again the influence of the impurity concentration and the supersaturation on the distribution coefficient kD was determined.

  4. Binding energy of impurity states in an inverse parabolic quantum well under magnetic field

    International Nuclear Information System (INIS)

    Kasapoglu, E.; Sari, H.; Soekmen, I.

    2007-01-01

    We have investigated the effects of the magnetic field which is directed perpendicular to the well on the binding energy of the hydrogenic impurities in an inverse parabolic quantum well (IPQW) with different widths as well as different Al concentrations at the well center. The Al concentration at the barriers was always x max =0.3. The calculations were performed within the effective mass approximation, using a variational method. We observe that IPQW structure turns into parabolic quantum well with the inversion effect of the magnetic field and donor impurity binding energy in IPQW strongly depends on the magnetic field, Al concentration at the well center and well dimensions

  5. Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

    Science.gov (United States)

    Janicek, Petr; Niang, Kham M.; Mistrik, Jan; Palka, Karel; Flewitt, Andrew J.

    2017-11-01

    ZnO:Sn thin films were deposited onto thermally oxidized silicon substrates using a remote plasma reactive sputtering. Their optical constants (refractive index n and extinction coefficient k) were determined from ellipsometric data recorded over a wide spectral range (0.05-6 eV). Parametrization of ZnO:Sn complex dielectric permittivity consists of a parameterized semiconductor oscillator function describing the short wavelength absorption edge, a Drude oscillator describing free carrier absorption in near-infrared part of spectra and a Lorentz oscillator describing the long wavelength absorption edge and intra-band absorption in the ultra-violet part of the spectra. Using a Mott-Davis model, the increase in local disorder with increasing Sn doping is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, an increase in the centroid distance of the valence and conduction bands with increasing Sn doping is shown and only slight increase in intensity of the inter-band optical transition due to Sn doping occurs. The Drude model applied in the near-infrared part of the spectra revealed the free carrier concentration and mobility of ZnO:Sn. Results show that the range of transparency of prepared ZnO:Sn layers is not dramatically affected by Sn doping whereas electrical conductivity could be controlled by Sn doping. Refractive index in the transparent part is comparable with amorphous Indium Gallium Zinc Oxide allowing utilization of prepared ZnO:Sn layers as an indium-free alternative.

  6. Peculiarities of component interaction in {Gd, Er}-V-Sn Ternary systems at 870 K and crystal structure of RV6Sn6 stannides

    International Nuclear Information System (INIS)

    Romaka, L.; Stadnyk, Yu.; Romaka, V.V.; Demchenko, P.; Stadnyshyn, M.; Konyk, M.

    2011-01-01

    Highlights: → {Gd, Er}-V-Sn ternary systems at 870 K are characterized by formation of stannides with general compositions RV 6 Sn 6 . → Isostructural RV 6 Sn 6 compounds were also found with Y, Dy, Ho, Tm, and Lu. → The crystal structure of RV 6 Sn 6 compounds was determined by powder diffraction method. → Structural analysis showed that RV 6 Sn 6 compounds (R = Gd, Dy-Tm, Lu) are disordered; YV 6 Sn 6 is characterized by structure ordering. - Abstract: The phase equilibria in the Gd-V-Sn and Er-V-Sn ternary systems were studied at 870 K by means of X-ray and metallographic analyses in the whole concentration range. Both Gd-V-Sn and Er-V-Sn systems are characterized by formation of one ternary compound at investigated temperature, with stoichiometry RV 6 Sn 6 (SmMn 6 Sn 6 -type, space group P6/mmm, a = 0.55322(3) nm, c = 0.91949(7) nm for Gd, a = 0.55191(2) nm, c = 0.91869(8) nm for Er). Solubility of the third component in the binary compounds was not observed. Compounds with the SmMn 6 Sn 6 -type were also found with Dy, Ho, Tm, and Lu, while YV 6 Sn 6 compound crystallizes in HfFe 6 Ge 6 structure type. All investigated compounds are the first ternary stannides with rare earth elements and vanadium.

  7. Effects of Density and Impurity on Edge Localized Modes in Tokamaks

    Science.gov (United States)

    Zhu, Ping

    2017-10-01

    Plasma density and impurity concentration are believed to be two of the key elements governing the edge tokamak plasma conditions. Optimal levels of plasma density and impurity concentration in the edge region have been searched for in order to achieve the desired fusion gain and divertor heat/particle load mitigation. However, how plasma density or impurity would affect the edge pedestal stability may have not been well known. Our recent MHD theory modeling and simulations using the NIMROD code have found novel effects of density and impurity on the dynamics of edge-localized modes (ELMs) in tokamaks. First, previous MHD analyses often predict merely a weak stabilizing effect of toroidal flow on ELMs in experimentally relevant regimes. We find that the stabilizing effects on the high- n ELMs from toroidal flow can be significantly enhanced with the increased edge plasma density. Here n denotes the toroidal mode number. Second, the stabilizing effects of the enhanced edge resistivity due to lithium-conditioning on the low- n ELMs in the high confinement (H-mode) discharges in NSTX have been identified. Linear stability analysis of the experimentally constrained equilibrium suggests that the change in the equilibrium plasma density and pressure profiles alone due to lithium-conditioning may not be sufficient for a complete suppression of the low- n ELMs. The enhanced resistivity due to the increased effective electric charge number Zeff after lithium-conditioning provides additional stabilization of the low- n ELMs. These new effects revealed in our theory analyses may help further understand recent ELM experiments and suggest new control schemes for ELM suppression and mitigation in future experiments. They may also pose additional constraints on the optimal levels of plasma density and impurity concentration in the edge region for H-mode tokamak operation. Supported by National Magnetic Confinement Fusion Science Program of China Grants 2014GB124002 and 2015GB

  8. Alloy Design and Property Evaluation of Ti-Mo-Nb-Sn Alloy for ...

    African Journals Online (AJOL)

    Ti-Mo alloy containing Nb and Sn were arc melted and composition analyzed by EDX. The XRD analysis indicates that the crystal structure and mechanical properties are sensitive to Sn concentration. A combination of Sn and Nb elements in synergy hindered formation athermal w phase and significantly enhanced b phase ...

  9. On exceeding the solubility limit of Cr+3 dopants in SnO2 nanoparticles based dilute magnetic semiconductors

    Science.gov (United States)

    URS, Kusuma; Bhat, S. V.; Kamble, Vinayak

    2018-04-01

    The paper investigates the magnetic behavior of chromium doped SnO2 Dilute Magnetic Semiconductor (DMS) nanoparticles, through structural, spectroscopic, and magnetic studies. A non-equilibrium solution combustion method is adopted to synthesize 0-5 at. % Cr doped SnO2 nanoparticles. The detailed spectroscopic studies on the system using micro-Raman spectroscopy, x-ray photoelectron spectroscopy, and electron paramagnetic resonance spectroscopy along with the structural analysis confirm the presence of Cr in 3+ oxidation state, which substitutes at Sn4+ site in SnO6 octahedra of the rutile structure. This doping is found to enhance the defects in the system, i.e., oxygen vacancies. All the synthesized SnO2 nanoparticles (with or without dopants) are found to exhibit Room Temperature Ferromagnetism (RTFM). This occurrence of RTFM is attributed to the magnetic exchange interaction through F-centers of oxygen vacancies as well as dopant magnetic impurities and explained through the Bound Magnetic Polaron (BMP) model of DMS systems. Nonetheless, as the doping of Cr is further increased beyond 2%, the solubility limit is achieved. This antiferromagnetic exchange interaction from interstitial Cr dopants dominates over the BMP mechanism and, hence, leads to the decrease in the net magnetic moment drastically.

  10. Donor impurity self-compensation by neutral complexes in bismuth doped lead telluride

    International Nuclear Information System (INIS)

    Ravich, Yu.I.; Nemov, S.A.; Proshin, V.I.

    1994-01-01

    Self-compensation is calculated of impurity doping action in semiconductors of the A 4 B 6 type by neutral complexes, consisting of a vacancy and two impurity atoms. Complexes entropy is estimated and the thermodynamic potential is minimized in the concentration of single two-charge vacancies and complexes. Calculation results are compared with experimental data, obtained when lead telluride doping by bismuth. Account for complex formation improves agreement theory with experiment. 4 refs., 1 fig

  11. A quantum chemical analysis of Zn and Sb doping and co-doping in SnO2

    Directory of Open Access Journals (Sweden)

    Luis Villamagua

    2017-10-01

    Full Text Available This work presents a quantum chemical study of Zn and Sb doping and co-doping in SnO2 carried out by a DFT+U method. The analysis has been developed by introducing three different modifications in the otherwise pure SnO2 system. In the first place, an oxygen vacancy was introduced within the crystal. Following, such a system was doped (separately by Zn or Sb impurities. Finally, the best energetic positions for both Zn and Sb atoms were simultaneously introduced within the lattice. Results of the simulations show that the confined charge that appeared due to the introduction of the oxygen vacancy interacts with the dopants atoms, being this interaction mostly responsible of the observed effects, i.e., EG shrinkage, F-centers formations, and magnetic momentum rise.

  12. G3.5 PAMAM dendrimers enhance transepithelial transport of SN38 while minimizing gastrointestinal toxicity.

    Science.gov (United States)

    Goldberg, Deborah S; Vijayalakshmi, Nirmalkumar; Swaan, Peter W; Ghandehari, Hamidreza

    2011-03-30

    Poly(amido amine) (PAMAM) dendrimers have shown promise in oral drug delivery. Conjugation of SN38 to PAMAM dendrimers has the potential to improve its oral absorption while minimizing gastrointestinal toxicity. In this work we evaluated G3.5 PAMAM dendrimer-SN38 conjugates with ester-linked glycine and β-alanine spacers for their suitability in oral therapy of hepatic colorectal cancer metastases. G3.5-βAlanine-SN38 was mostly stable while G3.5-Glycine-SN38 showed 10%, 20%, and 56% SN38 release in simulated gastric, intestinal and liver environments for up to 6, 24 and 48 hours, respectively. Short-term treatment of Caco-2 cells with G3.5-SN38 conjugates did not reduce cell viability, while comparable concentrations of SN38 caused significant cytotoxicity. G3.5-Glycine-SN38 and G3.5-βAlanine-SN38 showed IC₅₀ values of 0.60 and 3.59 μM, respectively, in HT-29 cells treated for 48 h, indicating the efficacy of the drug delivery system in colorectal cancer cells with longer incubation time. Both conjugates increased SN38 transepithelial transport compared to the free drug. Transport of G3.5-Glycine-SN38 was highly concentration-dependent whereas transport of G3.5-βAlanine-SN38 was concentration-independent, highlighting the influence of drug loading and spacer chemistry on transport mechanism. Together these results show that PAMAM dendrimers have the potential to improve the oral bioavailability of potent anti-cancer drugs. Copyright © 2010 Elsevier B.V. All rights reserved.

  13. Thermal conductivity of a quantum spin-1/2 antiferromagnetic chain with magnetic impurities

    International Nuclear Information System (INIS)

    Zviagin, A.A.

    2008-01-01

    We present an exact theory that describes how magnetic impurities change the behavior of the thermal conductivity for the integrable Heisenberg antiferromagnetic quantum spin-1/2 chain. Single magnetic impurities and a large concentration of impurities with similar values of the couplings to the host chain (a weak disorder) do not change the linear-in-temperature low-T behavior of the thermal conductivity: Only the slope of that behavior becomes smaller, compared to the homogeneous case. The strong disorder in the distribution of the impurity-host couplings produces more rapid temperature growth of the thermal conductivity, compared to the linear-in-T dependence of the homogeneous chain and the chain with weak disorder. Recent experiments on the thermal conductivity in inhomogeneous quasi-one-dimensional quantum spin systems manifest qualitative agreement with our results

  14. Impurity solitons with quadratic nonlinearities

    DEFF Research Database (Denmark)

    Clausen, Carl A. Balslev; Torres, Juan P-; Torner, Lluis

    1998-01-01

    We fmd families of solitary waves mediated by parametric mixing in quadratic nonlinear media that are localized at point-defect impurities. Solitons localized at attractive impurities are found to be dynamically stable. It is shown that localization at the impurity modifies strongly the soliton...

  15. Spin Diffusion and Spin Lattice Relaxation of Dipolar Order in Solids Containing Paramagnetic Impurities

    International Nuclear Information System (INIS)

    Furman, G.B.; Panich, A.M.; Goren, S.D.

    1998-01-01

    The phenomena of spin diffusion and spin lattice relaxation of nuclear dipolar order in solids containing paramagnetic impurities (PI) is considered. We show that at the beginning of the relaxation process the diffusion vanishing regime realizes with non-exponential time dependence, R(t) ∼ exp [- (t/T 1d ) α ], where T 1d ∼ C p -1/α , C p is PI's concentration. For a homogeneous distribution of Pis and nuclear spins, α=Q/6, where Q is the sample dimensionality; for an inhomogeneous distribution, the sample is divided into q-dimensional subsystems, each containing one PI, yield- ing α= (Q + q) /6. This result coincides with experimental data for CaF 2 doped with 0.8 - 10 -3 ωt % of Mn 2+ , where the non-exponential decay of the dipolar signal with α= 0.83 has been observed [3]. Fitting the experimental data yields a good agreement with T 1d = 66 ms . For another independent check of the obtained results we use dependence of the relaxation time on impurities concentration. In accordance that 1/α=1.2 , we have T 1d ∼ C p -1 '. 2 . Exactly this dependence on impurity concentration of the relaxation time has been found in the experiment. Then the relaxation regime starts as a non-exponential time dependent, proceed asymptotically to an to an exponential function of time, to so called diffusion limited relaxation regime with relaxation time T 1d D is inversely depends on impurities concentration. This kind of relaxation behavior of the dipolar order takes place in the experiment [2]. Using experimental results [2] from this two regime we can estimate the diffusion coefficient of the nuclear dipolar order in CaF 2 , which gives for typical values of impurity concentration C p ∼ 10 18 cm 3 the diffusion coefficient of dipolar order in the interval D ∼ 10 -11 -i- 10 -12 cm 2 /sec which is coincide to the case of Zeeman energy spin diffusion

  16. Effect of Impurities on the Triple Point of Water: Experiments with Doped Cells at Different Liquid Fractions

    Science.gov (United States)

    Dobre, M.; Peruzzi, A.; Kalemci, M.; Van Geel, J.; Maeck, M.; Uytun, A.

    2018-05-01

    Recent international comparisons showed that there is still room for improvement in triple point of water (TPW) realization uncertainty. Large groups of cells manufactured, maintained and measured in similar conditions still show a spread in the realized TPW temperature that is larger than the best measurement uncertainties (25 µK). One cause is the time-dependent concentration of dissolved impurities in water. The origin of such impurities is the glass/quartz envelope dissolution during a cell lifetime. The effect is a difference in the triple point temperature proportional to the impurities concentration. In order to measure this temperature difference and to investigate the effect of different types of impurities, we manufactured doped cells with different concentrations of silicon (Si), boron (B), sodium (Na) and potassium (K), the glass main chemical components. To identify any influence of the filling process, two completely independent manufacturing procedures were followed in two different laboratories, both national metrology institutes (VSL, Netherlands and UME, Turkey). Cells glass and filling water were also different while the doping materials were identical. Measuring the temperature difference as a function of the liquid fraction is a method to obtain information about impurities concentrations in TPW. Only cells doped with 1 µmol·mol-1 B, Na and K proved to be suitable for measurements at different liquid fractions. We present here the results with related uncertainties and discuss the critical points in this experimental approach.

  17. SN Refsdal

    DEFF Research Database (Denmark)

    Kelly, P. L.; Brammer, G.; Selsing, J.

    2016-01-01

    (SNe), and we find strong evidence for a broad H-alpha P-Cygni profile in the HST grism spectrum at the redshift (z = 1.49) of the spiral host galaxy. SNe IIn, powered by circumstellar interaction, could provide a good match to the light curve of SN Refsdal, but the spectrum of a SN IIn would not show...... in the rest frame, provide additional evidence that supports the SN 1987A-like classification. In comparison with other examples of SN 1987A-like SNe, SN Refsdal has a blue B-V color and a high luminosity for the assumed range of potential magnifications. If SN Refsdal can be modeled as a scaled version of SN...

  18. Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu2SnSe3

    International Nuclear Information System (INIS)

    Marcano, G.; Rincon, C.; Chalbaud, L. M. de; Bracho, D. B.; Perez, G. Sanchez

    2001-01-01

    X-ray powder diffraction by p-type Cu 2 SnSe 3 , prepared by the vertical Bridgman--Stockbarger technique, shows that this material crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a=6.5936(1)Aa, b=12.1593(4)Aa, c=6.6084(3)Aa, and β=108.56(2) o . The temperature variation of the hole concentration p obtained from the Hall effect and electrical resistivity measurements from about 160 to 300 K, is explained as due to the thermal activation of an acceptor level with an ionization energy of 0.067 eV, whereas below 100 K, the conduction in the impurity band dominates the electrical transport process. From the analysis of the p vs T data, the density-of-states effective mass of the holes is estimated to be nearly of the same magnitude as the free electron mass. In the valence band, the temperature variation of the hole mobility is analyzed by taking into account the scattering of charge carriers by ionized and neutral impurities, and acoustic phonons. In the impurity band, the mobility is explained as due to the thermally activated hopping transport. From the analysis of the optical absorption spectra at room temperature, the fundamental energy gap was determined to be 0.843 eV. The photoconductivity spectra show the presence of a narrow band gap whose main peak is observed at 0.771 eV. This band is attributed to a free-to-bound transition from the defect acceptor level to the conduction band. The origin of this acceptor state, consistent with the chemical composition of the samples and screening effects, is tentatively attributed to selenium interstitials. copyright 2001 American Institute of Physics

  19. A Calibration to Predict the Concentrations of Impurities in Plutonium Oxide by Prompt Gamma Analysis Revision 2

    Energy Technology Data Exchange (ETDEWEB)

    Narlesky, Joshua Edward [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Kelly, Elizabeth J. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-09-10

    This report documents the new PG calibration regression equation. These calibration equations incorporate new data that have become available since revision 1 of “A Calibration to Predict the Concentrations of Impurities in Plutonium Oxide by Prompt Gamma Analysis” was issued [3] The calibration equations are based on a weighted least squares (WLS) approach for the regression. The WLS method gives each data point its proper amount of influence over the parameter estimates. This gives two big advantages, more precise parameter estimates and better and more defensible estimates of uncertainties. The WLS approach makes sense both statistically and experimentally because the variances increase with concentration, and there are physical reasons that the higher measurements are less reliable and should be less influential. The new magnesium calibration includes a correction for sodium and separate calibration equation for items with and without chlorine. These additional calibration equations allow for better predictions and smaller uncertainties for sodium in materials with and without chlorine. Chlorine and sodium have separate equations for RICH materials. Again, these equations give better predictions and smaller uncertainties chlorine and sodium for RICH materials.

  20. Role of rare-earth impurities in the thermoluminescence of calcium sulphate phosphors

    International Nuclear Information System (INIS)

    Nambi, K.S.V.; Bapat, V.N.

    1974-01-01

    Rare-earth (RE) doped calcium sulphate phosphors like CaSO 4 (Dy) and CaSO 4 (Tm) are being extensively employed for radiation dosimetric measurements because of their good sensitivity, negligible fading and the case with which these could be economically produced in the laboratory. However the role played by the RE dopants in these phosphors has not been clearly brought out by any systematic studies. This paper presents the results obtained in an attempt to investigate the part played by RE impurities in the thermoluminescence (TL) of calcium sulphate phosphors prepared in the laboratory with known concentrations of the RE dopant. The phenomenon of concentration quenching has been observed withi increasing concentrations of the dopant and the experimental results could be fitted into the theoretical expression derived by Ewles and Lee. The effect of the individual RE dopant (at a concentration of 0.1% by weight in CaSO 4 ), on the TL glow curve patterns as well as the TL emission spectra was investigated after gamma irradiation at room temperature. While the TL glow curve patterns were strikingly similar, the TL emission spectra were characteristically different for the various dopants. The discrete line emissions recorded for the individual RE dopants could be easily identified to be the 4f fluorescence emissions of RE 3+ ions. Investigations on undoped calcium sulphate samples of different origins have revealed that their TL glow curve patterns are similar, while the differences observed in TL emission spectra could be ascribed to the different RE impurities in the samples. The study brings out clearly the role played by RE impurities as emission centres in CaSO 4 and implies that presence of any RE impurity in CaSO 4 cannot be ignored while explaining its thermoluminescence. (author)

  1. Impact of thickness on the structural properties of high tin content GeSn layers

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.; Gassenq, A.; Milord, L.; Pauc, N.; Reboud, V.; Calvo, V.

    2017-09-01

    We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-flow ratio were kept constant, and incorporation of tin in the range of 10-15% was achieved with a reduction in temperature: 325 °C for 10% to 301 °C for 15% of Sn. The layers were grown on 2.5 μm thick Ge Strain Relaxed Buffers, themselves on Si(0 0 1) substrates. We used X-ray Diffraction, Atomic Force Microscopy, Raman spectroscopy and Scanning Electron Microscopy to measure the Sn concentration, the strain state, the surface roughness and thickness as a function of growth duration. A dramatic degradation of the film was seen when the Sn concentration and layer thickness were too high resulting in rough/milky surfaces and significant Sn segregation.

  2. Impurity-generated non-Abelions

    Science.gov (United States)

    Simion, G.; Kazakov, A.; Rokhinson, L. P.; Wojtowicz, T.; Lyanda-Geller, Y. B.

    2018-06-01

    Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an s -wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an s superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by

  3. Phonon-impurity relaxation and acoustic wave absorption in yttrium-aluminium garnet crystals with impurities

    International Nuclear Information System (INIS)

    Ivanov, S.N.; Kotelyanskij, I.M.; Medved', V.V.

    1983-01-01

    The experimental results of investigations of the influence of substitution impurities in the yttrium-aluminium garnet lattice on absorption of high-frequency acoustic waves are presented. It is shown that the phonon-impurity relaxation processses affect at most the wave absorption and have resonance character when the acoustic wave interacts with the thermal phonon group in the vicinity of the perturbed part of the phonon spectrum caused by the impurity. The differences of time values between inelastic and elastic thermal phonons relaxations determined from the data on longitudinal and shear waves in pure and impurity garnet crystals are discussed

  4. Gas Sensing Properties of Ordered Mesoporous SnO2

    Directory of Open Access Journals (Sweden)

    Michael Tiemann

    2006-04-01

    Full Text Available We report on the synthesis and CO gas-sensing properties of mesoporoustin(IV oxides (SnO2. For the synthesis cetyltrimethylammonium bromide (CTABr wasused as a structure-directing agent; the resulting SnO2 powders were applied as films tocommercially available sensor substrates by drop coating. Nitrogen physisorption showsspecific surface areas up to 160 m2·g-1 and mean pore diameters of about 4 nm, as verifiedby TEM. The film conductance was measured in dependence on the CO concentration inhumid synthetic air at a constant temperature of 300 °C. The sensors show a high sensitivityat low CO concentrations and turn out to be largely insensitive towards changes in therelative humidity. We compare the materials with commercially available SnO2-basedsensors.

  5. Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

    International Nuclear Information System (INIS)

    Watanabe, Ken; Ohsawa, Takeo; Ross, Emily M.; Adachi, Yutaka; Haneda, Hajime; Sakaguchi, Isao; Takahashi, Ryosuke; Bierwagen, Oliver; White, Mark E.; Tsai, Min-Ying; Speck, James S.; Ohashi, Naoki

    2014-01-01

    The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO 2 ) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO 2 . The H-concentration of the In-doped SnO 2 films increased to (1–2) × 10 19  cm −3 by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations

  6. Divertor experiment for impurity control in DIVA

    International Nuclear Information System (INIS)

    Nagami, Masayuki

    1979-04-01

    Divertor actions of controlling the impurities and the transport of impurity ions in the plasma have been investigated in the DIVA device. Following are the results: (1) The radial transport of impurity ions is not described only by neoclassical theory, but it is strongly influenced by anomalous process. Radial diffusion of impurity ions across the whole minor radius is well described by a neoclassical diffusion superposed by the anomalous diffusion for protons. Due to this anomalous process, which spreads the radial density profile of impurity ions, 80 to 90% of the impurity flux in the plasma outer edge is shielded even in a nondiverted discharge. (2) The divertor reduces the impurity flux entering the main plasma by a factor of 2 to 4. The impurity ions shielded by the scrape-off plasma are rapidly guided into the burial chamber with a poloidal excursion time roughly equal to that of the scrape-off plasma. (3) The divertor reduces the impurity ion flux onto the main vacuum chamber by guiding the impurity ions diffusing from the main plasma into the burial chamber, thereby reducing the plasma-wall interaction caused by diffusing impurity ions at the main vacuum chamber. The impurity ions produced in the burial chamber may flow back to the main plasma through the scrape-off layer. However, roughly only 0.3% of the impurity flux into the scrape-off plasma in the burial chamber penetrates into the main plasma due to the impurity backflow. (4) A slight cooling of the scrape-off plasma with light-impurity injection effectively reduces the metal impurity production at the first wall by reducing the potential difference between the plasma and the wall, thereby reducing the accumulation of the metal impurity in the discharge. Radiation cooling by low-Z impurities in the plasma outer edge, which may become an important feature in future large tokamaks both with and without divertor, is numerically evaluated for carbon, oxygen and neon. (author)

  7. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    International Nuclear Information System (INIS)

    Lotfi, E; Rezania, H; Arghavaninia, B; Yarmohammadi, M

    2016-01-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength. (paper)

  8. Dielectric and magnetic properties of (Zn, Co) co-doped SnO2 nanoparticles

    International Nuclear Information System (INIS)

    Rajwali, Khan; Fang Ming-Hu

    2015-01-01

    Polycrystalline samples of (Zn, Co) co-doped SnO 2 nanoparticles were prepared using a co-precipitation method. The influence of (Zn, Co) co-doping on electrical, dielectric, and magnetic properties was studied. All of the (Zn, Co) co-doped SnO 2 powder samples have the same tetragonal structure of SnO 2 . A decrease in the dielectric constant was observed with the increase of Co doping concentration. It was found that the dielectric constant and dielectric loss values decrease, while AC electrical conductivity increases with doping concentration and frequency. Magnetization measurements revealed that the Co doping SnO 2 samples exhibits room temperature ferromagnetism. Our results illustrate that (Zn, Co) co-doped SnO 2 nanoparticles have an excellent dielectric, magnetic properties, and high electrical conductivity than those reported previously, indicating that these (Zn, Co) co-doped SnO 2 materials can be used in the field of the ultrahigh dielectric material, high frequency device, and spintronics. (paper)

  9. EUV Spectra of High Z Impurities from Large Helical Device and Atomic Data

    International Nuclear Information System (INIS)

    Kato, T.; Suzuki, C.; Funaba, H.; Sato, K.; Murakami, I.; Kato, D.; Sakaue, H.; O’Sullivan, G.; Harte, C.; White, J.; D’Arcy, R.; Tanuma, H.; Nakamura, N.

    2017-01-01

    The results of experiments on high Z impurity injection in the Large Helical Device at the National Institute for Fusion Science are described. Spectra from Xe, Sn and W ions were recorded in the extreme ultraviolet spectral region. Two different situations were observed in the case of Xe and Sn, depending on whether or not the plasma underwent radiative collapse. If the plasma was stable, the spectrum consisted of a number of strong lines and in both cases the strongest contribution was from 4p - 4d transitions of Cu-like ions. If the plasma underwent radiative collapse in each case it was dominated by an intense unresolved transition array with some strong lines overlapping it resulting from 4p 6 4d m - 4p 5 4d m+1 + 4p 6 4d m-1 4f transitions. For tungsten, radiative collapse was not observed though the spectrum here was dominated by the same array which lies between 4.5 and 7 nm with some additional contribution at the same wavelength from 4d 10 4f m - 4d 9 4f m+1 and 4d 10 4f m - 4d 10 4f m-1 5d transitions in lower stages also. From observation and comparison with other sources, it is shown that the spectra are dominated by resonance transitions to the ground state of the emitting ions, in marked contrast to results from charge exchange spectra that had been recorded to assist with ion stage separation. In the case of tungsten, no sharp lines are seen though the profile of the unresolved array structure changes with plasma temperature and the origin of these changes can be traced to differences in the populations of contributing ions. New assignments for lines of Xe XVIII, Sn XIX and Sn XVII of 4p - 4d transitions are listed in Tables. Strong lines of W, Xe and Sn ions in EUV range are also tabulated. (author)

  10. Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

    Science.gov (United States)

    Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi

    2018-06-05

    SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.

  11. Graphene plasmons: Impurities and nonlocal effects

    Science.gov (United States)

    Viola, Giovanni; Wenger, Tobias; Kinaret, Jari; Fogelström, Mikael

    2018-02-01

    This work analyzes how impurities and vacancies on the surface of a graphene sample affect its optical conductivity and plasmon excitations. The disorder is analyzed in the self-consistent Green's function formulation and nonlocal effects are fully taken into account. It is shown that impurities modify the linear spectrum and give rise to an impurity band whose position and width depend on the two parameters of our model, the density and the strength of impurities. The presence of the impurity band strongly influences the electromagnetic response and the plasmon losses. Furthermore, we discuss how the impurity-band position can be obtained experimentally from the plasmon dispersion relation and discuss this in the context of sensing.

  12. Ionic liquid-assisted sonochemical synthesis of SnS nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    García-Gómez, Nora A.; Parra-Arcieniega, Salomé M. de la; Garza-Tovar, Lorena L.; Torres-González, Luis C.; Sánchez, Eduardo M., E-mail: eduardo.sanchezcv@uanl.edu.mx

    2014-03-05

    Highlight: • Obtention of SnS nanostructures using novel ionic liquid assisted sonochemical method. • Influence of the (BMImBF{sub 4}) ionic liquid in SnS morphology. • Inhibitory effect in SnS crystallinity by structuring agents in ionic environments. -- Abstract: SnS nanoparticles have been successfully synthesized by the ionic liquid-assisted sonochemical method (ILASM). The starting reagents were anhydrous SnCl{sub 2}, thioacetamide, dissolved in ethanol and ionic liquid (IL)1-butyl-3-methylimidazolium tetrafluoroborate (BMImBF{sub 4}) mixtures. Our experiments showed that IL plays an important role in the morphology of SnS. A 1:1 ethanol:IL mixture was found to yield the more interesting features. The lower concentration of Sn (II) in solution favored the presence of nanoplatelets. An increase in ultrasonic time favored crystalline degree and size as well. Also, the effect of additives as 3-mercaptopropionic acid, diethanolamine, ethylene glycol, and trioctyl phosphine oxide is reported. X-ray diffraction (XRD) and ultraviolet–visible diffuse reflectance spectroscopy (UV–Vis-DRS) were used to characterize the obtained products.

  13. Mg{sub 2}Sn heterostructures on Si(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Dózsa, L., E-mail: dozsa@mfa.kfki.hu [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Galkin, N.G. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation); Pécz, B.; Osváth, Z.; Zolnai, Zs. [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Németh, A. [Wigner Research Centre for Physics, Institute for Particle and Nuclear Physics, 1525 Budapest, P.O.B. 49 (Hungary); Galkin, K.N.; Chernev, I.M. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Dotsenko, S.A. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation)

    2017-05-31

    Highlights: • Investigations show that the nanostructures have significant changes during the applied regular experimental investigations. • It is especially true for transmittance electron microscopy, where the investigated layers have to be thinned near to the nanostructure size. • The time order of the applied experimental investigation has a dominant effect on the experimetal results. - Abstract: Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg{sub 2}Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg{sub 2}Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg{sub 2}Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg{sub 2}Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg{sub 2}Sn layer. The measurements indicate the necessity of protective layer grown over the Mg{sub 2}Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

  14. The effects of impurities on the properties of OFP copper specified for the copper iron canister

    International Nuclear Information System (INIS)

    Bowyer, W.H.

    1999-09-01

    A brief literature study has addressed the effects of impurities on OF copper to which 50 ppm of phosphorus has been added. This copper is the candidate material for the corrosion resistant coating to be applied to the container under development by SKB for the disposal of high level nuclear waste. The levels of impurities expected in this grade of copper and the final use have controlled the focus of the work. It is concluded that the impurities of greatest importance in the context of the proposed application are sulphur, phosphorus, bismuth and lead. The addition of 50 ppm of phosphorus should ensure very low oxygen content in the copper such that, As, Ni, Mn, Cr, Fe, Sn, Zn, Si, Al, Sb and Cd present as impurities all remain in solution in the copper at all temperatures of interest. In this state they will exert no material effect on the fitness for purpose of the material. Sulphur is expected to be present in amounts exceeding the solubility limit such that it will occur as grain boundary films or particles. Such segregation can cause embrittlement and it will be more serious as grain size increases. There is no evidence to support the assertion that the phosphorus addition modifies the segregation behaviour of sulphur. There is evidence that sulphur will combine with V, Zr, or Ti, even when they are present at extremely low levels, but there is no indication of the likely effects of these combinations on the segregation behaviour or embrittling effects. There is clear evidence that when creep failure occurs by intergranular cracking, sulphur causes the creep strain to fracture to be reduced to less than 1%. The amount of sulphur required for this is very low (i.e. less than the amount permitted in the specification) and dependant on grain size. The transition from transgranular to intergranular failure in creep is influenced by temperature, stress, grain size, and composition. The addition of phosphorus increases the temperature at which the transition occurs

  15. The effects of impurities on the properties of OFP copper specified for the copper iron canister

    Energy Technology Data Exchange (ETDEWEB)

    Bowyer, W.H. [Meadow End Farm, Farnham (United Kingdom)

    1999-09-01

    A brief literature study has addressed the effects of impurities on OF copper to which 50 ppm of phosphorus has been added. This copper is the candidate material for the corrosion resistant coating to be applied to the container under development by SKB for the disposal of high level nuclear waste. The levels of impurities expected in this grade of copper and the final use have controlled the focus of the work. It is concluded that the impurities of greatest importance in the context of the proposed application are sulphur, phosphorus, bismuth and lead. The addition of 50 ppm of phosphorus should ensure very low oxygen content in the copper such that, As, Ni, Mn, Cr, Fe, Sn, Zn, Si, Al, Sb and Cd present as impurities all remain in solution in the copper at all temperatures of interest. In this state they will exert no material effect on the fitness for purpose of the material. Sulphur is expected to be present in amounts exceeding the solubility limit such that it will occur as grain boundary films or particles. Such segregation can cause embrittlement and it will be more serious as grain size increases. There is no evidence to support the assertion that the phosphorus addition modifies the segregation behaviour of sulphur. There is evidence that sulphur will combine with V, Zr, or Ti, even when they are present at extremely low levels, but there is no indication of the likely effects of these combinations on the segregation behaviour or embrittling effects. There is clear evidence that when creep failure occurs by intergranular cracking, sulphur causes the creep strain to fracture to be reduced to less than 1%. The amount of sulphur required for this is very low (i.e. less than the amount permitted in the specification) and dependant on grain size. The transition from transgranular to intergranular failure in creep is influenced by temperature, stress, grain size, and composition. The addition of phosphorus increases the temperature at which the transition occurs

  16. Interplay of light and heavy impurities in a fusion plasma

    Energy Technology Data Exchange (ETDEWEB)

    Gaja, Mustafa [IPP, Garching (Germany); Tokar, Mikhail [IEK4, Juelich FZ, Juelich (Germany)

    2016-07-01

    Radiation from impurities eroded from the walls can lead to a broad spectrum of spectacular phenomena in fusion devices An example of such events are breathing oscillations observed in the large helical device (LHD), in long pulse discharges with a stainless steel divertor. They were characterized with oscillations of a period of a second in various plasma parameters. By optimizing magnetic geometry this operation mode, leading to a deteriorate plasma performance, can be avoided. Nonetheless it is of interest and practical importance to understand and firmly predict conditions for breathing phenomenon, in particular, in view of similar impurity environment in W-7 X stellarator. A qualitative explanation for breathing oscillations proposed earlier presumes that they arise due to non-linear synergetic interplay of diverse physical processes. A one-dimensional non-stationary model, describing the generation and transport of main, impurity particles and heat by including the radiation of high-Z (Fe) and low-Z (C and O) impurities is elaborated here. The calculations predict the appearance of oscillations in the relevant range of plasma parameters, reproduce well experimentally observed amplitudes and period of oscillations. It demonstrates that the smaller the fraction of the plasma interaction with a stainless steel surface, the higher the light impurity concentration needed to excite the breathing oscillations. This shows a way to avoid oscillations in future experiments.

  17. Time-reversal breaking and spin transport induced by magnetic impurities in a 2D topological insulator

    International Nuclear Information System (INIS)

    Derakhshan, V; Ketabi, S A; Moghaddam, A G

    2016-01-01

    We employed the formalism of bond currents, expressed in terms of non-equilibrium Green’s function to obtain the local currents and transport features of zigzag silicene ribbon in the presence of magnetic impurity. When only intrinsic and Rashba spin–orbit interactions are present, silicene behaves as a two-dimensional topological insulator with gapless edge states. But in the presence of finite intrinsic spin–orbit interaction, the edge states start to penetrate into the bulk of the sample by increasing Rashba interaction strength. The exchange interaction induced by local impurities breaks the time-reversal symmetry of the gapless edge states and influences the topological properties strongly. Subsequently, the singularity of partial Berry curvature disappears and the silicene nanoribbon becomes a trivial insulator. On the other hand, when the concentration of the magnetic impurities is low, the edge currents are not affected significantly. In this case, when the exchange field lies in the x – y plane, the spin mixing around magnetic impurity is more profound rather than the case in which the exchange field is directed along the z -axis. Nevertheless, when the exchange field of magnetic impurities is placed in the x – y plane, a spin-polarized conductance is observed. The resulting conductance polarization can be tuned by the concentration of the impurities and even completely polarized spin transport is achievable. (paper)

  18. The behaviour of impurities in a steady-state DT gas-blanket reactor

    International Nuclear Information System (INIS)

    Markvoort, J.A.

    1975-11-01

    A four-fluid model of a cylindrical steady-state DT gas-blanket reactor is analysed. The four fluids are electrons, deuterium-tritium, helium and a high -Z impurity. The behaviour of the plasma is described by the multifluid MHD-equations which are numerically solved with the aid of a Runge Kutta method. Whether impurities tend to concentrate on the axis is found to depend on how, in the collision term, the Nernst effect is taken into account. In order to show the influence of the Nernst terms arising from electron-ion collisions and the Nernst terms due to ion-ion collisions separately, the thermal force is dealt with in two ways. In model A, only the contribution from electron-ion collisions was considered. The computer calculations show that the impurities have their maximum concentration on the axis. A theoretical analysis explains this result. In model B, which is more realistic, these ion-ion collisions are included. The computer calculations as well as the theoretical analysis show that the influence of the thermoforce due to ion-ion collisions on the density profiles dominates over the force due to electron collisions, and lead to a minimum in the impurity density on the axis. As in model A, the analytical analysis yields relationships between the various density profiles and the temperature profile

  19. Power balance and characterization of impurities in the Maryland Spheromak

    International Nuclear Information System (INIS)

    Cote, C.

    1993-01-01

    The Maryland Spheromak is a medium size magnetically confined plasma of toroidal shape. Low T e and higher n e than expected contribute to produce a radiation dominated short-lived spheromak configuration. A pyroelectric radiation detector and a VUV spectrometer have been used for space and time-resolved measurements of radiated power and impurity line emission. Results from the bolometry and VUV spectroscopy diagnostics have been combined to give the absolute concentrations of the major impurity species together with the electron temperature. The large amount of oxygen and nitrogen ions in the plasma very early in the discharge is seen to be directly responsible for the abnormally high electron density. The dominant power loss mechanisms are found to be radiation (from impurity line emission) and electron convection to the end walls during the formation phase of the spheromak configuration, and radiation only during the decay phase

  20. Power balance and characterization of impurities in the Maryland Spheromak

    Energy Technology Data Exchange (ETDEWEB)

    Cote, Claude [Univ. of Maryland, College Park, MD (United States)

    1993-01-01

    The Maryland Spheromak is a medium size magnetically confined plasma of toroidal shape. Low Te and higher ne than expected contribute to produce a radiation dominated short-lived spheromak configuration. A pyroelectric radiation detector and a VUV spectrometer have been used for space and time-resolved measurements of radiated power and impurity line emission. Results from the bolometry and VUV spectroscopy diagnostics have been combined to give the absolute concentrations of the major impurity species together with the electron temperature. The large amount of oxygen and nitrogen ions in the plasma very early in the discharge is seen to be directly responsible for the abnormally high electron density. The dominant power loss mechanisms are found to be radiation (from impurity line emission) and electron convection to the end walls during the formation phase of the spheromak configuration, and radiation only during the decay phase.

  1. The high-temperature modification of LuAgSn and high-pressure high-temperature experiments on DyAgSn, HoAgSn, and YbAgSn

    Energy Technology Data Exchange (ETDEWEB)

    Heying, B.; Rodewald, U.C.; Hermes, W.; Schappacher, F.M.; Riecken, J.F.; Poettgen, R. [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Heymann, G.; Huppertz, H. [Muenchen Univ. (Germany). Dept. fuer Chemie und Biochemie; Sebastian, C.P. [Max-Planck-Institut fuer Chemische Physik Fester Stoffe, Dresden (Germany)

    2008-02-15

    The high-temperature modification of LuAgSn was obtained by arc-melting an equiatomic mixture of the elements followed by quenching the melt on a water-cooled copper crucible. HT-LuAgSn crystallizes with the NdPtSb-type structure, space group P6{sub 3}mc: a = 463.5(1), c = 723.2(1) pm, wR2 = 0.0270, 151 F{sup 2}, and 11 variables. The silver and tin atoms build up two-dimensional, puckered [Ag{sub 3}Sn{sub 3}] networks (276 pm Ag-Sn) that are charge-balanced and separated by the lutetium atoms. The Ag-Sn distances between the [Ag{sub 3}Sn{sub 3}] layers of 294 pm are much longer. Single crystals of isotypic DyAgSn (a = 468.3(1), c = 734.4(1) pm, wR2 = 0.0343, 411 F{sup 2}, and 11 variables) and HoAgSn (a = 467.2(1), c = 731.7(2) pm, wR2 = 0.0318, 330 F{sup 2}, and 11 variables) were obtained from arc-melted samples. Under high-pressure (up to 12.2 GPa) and high-temperature (up to 1470 K) conditions, no transitions to a ZrNiAl-related phase have been observed for DyAgSn, HoAgSn, and YbAgSn. HT-TmAgSn shows Curie-Weiss paramagnetism with {mu}{sub eff} = 7.53(1) {mu}{sub B}/Tm atom and {theta}P = -15.0(5) K. No magnetic ordering was evident down to 3 K. HT-LuAgSn is a Pauli paramagnet. Room-temperature {sup 119}Sn Moessbauer spectra of HT-TmAgSn and HT-LuAgSn show singlet resonances with isomer shifts of 1.78(1) and 1.72(1) mm/s, respectively. (orig.)

  2. Divertor impurity injection using high voltage arcs for impurity transport studies on the Mega Amp Spherical Tokamak

    International Nuclear Information System (INIS)

    Leggate, H. J.; Turner, M. M.; Lisgo, S. W.; Harrison, J. R.; Elmore, S.; Allan, S. Y.; Gaffka, R. C.; Stephen, R. C.

    2014-01-01

    The operation of next-generation fusion reactors will be significantly affected by impurity transport in the scrape-off layer (SOL). Current modelling efforts are restricted by a lack of detailed data on impurity transport in the SOL. In order to address this, a carbon injector has been designed and installed on the Mega Amp Spherical Tokamak (MAST). The injector creates short lived carbon plumes originating at the MAST divertor lasting less than 50 μs. High voltage capacitor banks are used to create a discharge across concentric carbon electrodes located in a probe mounted on the Divertor Science Facility in the MAST lower divertor. This results in a very short plume duration allowing observation of the evolution of the plume and precise localisation of the plume relative to the X-point on MAST. The emission from the carbon plume was imaged using fast visible cameras filtered in order to isolate the carbon II and carbon III emission lines centered around 514 nm and 465 nm

  3. The impurity transport in HT-6B tokamak

    International Nuclear Information System (INIS)

    Huang Rong; Xie Jikang; Li Linzhong; He Yexi; Wang Shuya; Deng Chuanbao; Li Guoxiang; Qiu Lijian

    1992-06-01

    The quasi-stationary profiles of the impurity ionization stages in HT-6B tokamak were determined by monitoring the VUV (vacuum ultraviolet) and visible line emissions from impurities. An impurity transport code was set up. The impurity transport coefficients and other parameters of impurities in that device were simulated and determined. From the measurement of impurity emission profiles and simulation analysis, it is concluded that the impurity confinement is improved and the impurity recycling is reduced by the slow magnetic compression. Some characteristics of impurity transport in that device are also discussed

  4. Raman scattering from Ge{sub 1-x}Sn{sub x} (x ≤ 0.14) alloys

    Energy Technology Data Exchange (ETDEWEB)

    Navarro C, H.; Rodriguez, A. G.; Vidal, M. A. [Universidad Autonoma de San Luis Potosi, Coordinacion para la Innovacion y la Aplicacion de la Ciencia y la Tecnologia, Alvaro Obregon No. 64, 78000 San Luis Potosi, S. L. P. (Mexico); Perez Ladron de G, H. [Universidad de Guadalajara, Centro Universitario de los Lagos, Av. Enrique Diaz de Leon No. 1144, Col. Paseos de la Montana, 47460 Lagos de Moreno, Jalisco (Mexico)

    2015-07-01

    Ge{sub 1-x}Sn{sub x} alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14% by high resolution X-ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6% as revealed by X-ray diffraction and Raman spectroscopy. (Author)

  5. Decay properties of nuclei in the neighbourhood of {sup 100}Sn; Zerfallseigenschaften von Nukliden in der Umgebung von {sup 100}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Straub, Katrin

    2011-01-24

    This thesis concentrates on nuclear properties of very neutron deficient nuclei near the proton dripline in the neighbourhood of doubly-magic {sup 100}Sn. In an experiment performed in March 2008 at the GSI in Darmstadt, the exotic nuclei were produced in a projectile fragmentation reaction using a {sup 124}Xe primary beam with an energy of 100 AMeV impinging on a 4000 Beryllium target, separated and identified in the FRS and eventually stopped for decay spectroscopy in a complex implantation detector developed at the institute E12. The Germanium array RISING was employed for the measurement of prompt and delayed gamma radiation. Production cross sections and half lives were determined along the proton dripline. The isotopes {sup 99}Sn, {sup 97}In and {sup 95}Cd were identified for the first time. additional nuclei studied in this thesis are {sup 103}Sn, {sup 96}Cd as well as the two tin isotopes {sup 101}Sn and {sup 102}Sn. (orig.)

  6. Impurities and evaluation of induced activity of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Noda, Tetsuji; Araki, Hiroshi; Ito, Shinji; Fujita, Mitsutane; Maki, Koichi

    1997-01-01

    Impurity of SiC f /SiC composites prepared by CVI was analyzed by neutron activation analysis and glow discharge mass spectrometry. The evaluation of the induced activity of the composites based on the chemical compositions was made using a simulation calculation for fusion reactor blanket. Impurities of 35 elements were detected in the composites. However the total concentration of metallic impurities was below 20 mass ppm. The analyses of induced activity of the composites show that the dose rate decreases by about 5 orders of magnitude in a day after the shutdown. It is recommended that the purification of SiC fibers is necessary to reduce the activity by 10 9 after several ten years cooling of fusion reactors. (author)

  7. The development of 126Sn separation procedure by means of TBP resin

    International Nuclear Information System (INIS)

    Andris, Boris; Bena, Jozef

    2016-01-01

    Separation possibilities of 126 Sn with a new extraction-chromatographic material TBP Resin were studied. Suitable conditions for tin separation were determined in hydrochloric acid medium. 126 Sn was concentrated on TBP resin from 6 mol L -1 HCl and was eluted with 0.1 mol L -1 HCl. A purification step to remove 137 Cs with AMP-PAN column was necessary to obtain sufficiently purified samples which were directly measured with gamma spectrometry for 126 Sn activity. Separation of 126 Sn from a raw sludge sample was done according to proposed procedure, 126 Sn was detected and its activity was determined. (author)

  8. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  9. Effects of magnetic and nonmagnetic impurities on the spin susceptibility of a noncentrosymmetrical superconductor: Application to CePt3Si

    Science.gov (United States)

    Yavari, H.; Mokhtari, M.; Tamaddonpour, M.

    2013-10-01

    The combined effect of nonmagnetic and magnetic impurities on the spin susceptibility of a noncentrosymmetrical superconductor by considering a Cooper pairing model with a two-component order parameter composed of spin-singlet and spin-triplet pairing components is investigated. For clean superconductor CePt3Si, the low-temperature dependence (T →0) of spin susceptibility is linear which suggests that the gap function has line nodes, consistent with our gap model. We will show that in the presence of magnetic impurities the susceptibility does not vanish even in the absence of spin orbit coupling and in the region where the energy gap still is finite, and in the low concentration of magnetic impurities the spin susceptibility at zero temperature is proportional to impurity concentration.

  10. Impurity-induced moments in underdoped cuprates

    International Nuclear Information System (INIS)

    Khaliullin, G.; Kilian, R.; Krivenko, S.; Fulde, P.

    1997-01-01

    We examine the effect of a nonmagnetic impurity in a two-dimensional spin liquid in the spin-gap phase, employing a drone-fermion representation of spin-1/2 operators. The properties of the local moment induced in the vicinity of the impurity are investigated and an expression for the nuclear-magnetic-resonance Knight shift is derived, which we compare with experimental results. Introducing a second impurity into the spin liquid an antiferromagnetic interaction between the moments is found when the two impurities are located on different sublattices. The presence of many impurities leads to a screening of this interaction as is shown by means of a coherent-potential approximation. Further, the Kondo screening of an impurity-induced local spin by charge carriers is discussed. copyright 1997 The American Physical Society

  11. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  12. Reference Data for the Density, Viscosity, and Surface Tension of Liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn Eutectic Alloys

    Science.gov (United States)

    Dobosz, Alexandra; Gancarz, Tomasz

    2018-03-01

    The data for the physicochemical properties viscosity, density, and surface tension obtained by different experimental techniques have been analyzed for liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn eutectic alloys. All experimental data sets have been categorized and described by the year of publication, the technique used to obtain the data, the purity of the samples and their compositions, the quoted uncertainty, the number of data in the data set, the form of data, and the temperature range. The proposed standard deviations of liquid eutectic Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn alloys are 0.8%, 0.1%, 0.5%, 0.2%, and 0.1% for the density, 8.7%, 4.1%, 3.6%, 5.1%, and 4.0% for viscosity, and 1.0%, 0.5%, 0.3%, N/A, and 0.4% for surface tension, respectively, at a confidence level of 95%.

  13. Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

    International Nuclear Information System (INIS)

    Azzouzi, Ghania; Chegaar, Mohamed

    2011-01-01

    The impurity photovoltaic effect (IPV) has mostly been studied in various semiconductors such as silicon, silicon carbide and GaAs in order to increase infrared absorption and hence cell efficiency. In this work, sulphur is used as the IPV effect impurity incorporated in silicon solar cells. For our simulation we use the numerical device simulator (SCAPS). We calculate the solar cell performances (short circuit current density J sc , open circuit voltage V oc , conversion efficiency η and quantum efficiency QE). We study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the solar cell performances. Simulation results for IPV effect on silicon doped with sulphur show an improvement of the short circuit current and the efficiency for sulphur energy levels located far from the middle of the band gap especially at E c -E t =0.18 eV.

  14. Impurity studies and discharge cleaning in Doublet III

    Energy Technology Data Exchange (ETDEWEB)

    Marcus, F.B.

    1979-10-01

    The goal of present and next generation tokamak experiments is to produce high-density, high-purity plasmas during high-power, extended-duration discharges. Plasma discharges with Z/sub eff/ values near unity and low concentrations of medium and high-Z metallic impurities have been obtained in Doublet III using a combination of low-power hydrogen discharge cleaning, gas puffing, precise plasma shape and position control, and high-Z limiters. Analysis of the first wall surface and residual gas impurities confirmed that clean conditions have been achieved. The high-Z limiters showed very limited amounts of melting or arcing. The progress of the wall cleaning process was monitored by three diagnostic techniques: Auger electron spectroscopy of metallic samples at the vessel wall, residual gas analysis, and the resistivity of full power discharges.

  15. Impurity studies and discharge cleaning in Doublet III

    International Nuclear Information System (INIS)

    Marcus, F.B.

    1979-10-01

    The goal of present and next generation tokamak experiments is to produce high-density, high-purity plasmas during high-power, extended-duration discharges. Plasma discharges with Z/sub eff/ values near unity and low concentrations of medium and high-Z metallic impurities have been obtained in Doublet III using a combination of low-power hydrogen discharge cleaning, gas puffing, precise plasma shape and position control, and high-Z limiters. Analysis of the first wall surface and residual gas impurities confirmed that clean conditions have been achieved. The high-Z limiters showed very limited amounts of melting or arcing. The progress of the wall cleaning process was monitored by three diagnostic techniques: Auger electron spectroscopy of metallic samples at the vessel wall, residual gas analysis, and the resistivity of full power discharges

  16. ACCELERATING COLUMN FOR SEPARATION OF ETHANOL FROM FACTIONS OF INTERMEDIATE AND HEAD IMPURITIES

    Directory of Open Access Journals (Sweden)

    G. V. Agafonov

    2015-01-01

    Full Text Available Summary. Nowadays purification of ethanol from the head and intermediate impurities is done with the selection of fractions of fusel alcohol and fusel oil from the distillation column and head and intermediate fractions impurities from condenser Epuration column operating accord-ing to the hydro-selection method. Due to this the fraction contains at least 13% ethyl alcohol, resulting in a reduced yield of the final product. Distillation of these fractions in the known acceleration columns requires increased consumption of heating steam for 6-8 kg / dal and increasing installation metal content. In this paper we investigate the process of distillation fraction from the condenser of Epura-tion column, fusel alcohol from the distillation column and subfusel liquid layer from the decanter, which is fed on a plate of supply of new accelerating column (AC, which operates on Epuration technology with the supply of hydro-selection water on the top plate and has in its composition concentration, boiling and stripping parts, a dephlagmator, a condenser, a boiler. Material balance equations of the column were obtained and ethyl alcohol concentration on its plates were determined by them. Having converted the material balance equations, we determined the dependences for the impurities ratio being drawn from the accelerating column with the Luther flows and ethyl alcohol fraction. Then we received the equation for determining the proportion of impurities taken from the column condenser with fraction. These calculations proved that the studied impurities are almost completely selected with this faction, ethyl alcohol content of it being 0.14% of the hourly output.

  17. Atomic absorption determination of iron and copper impurities in rare earth compounds

    International Nuclear Information System (INIS)

    Zelyukova, Yu.V.; Kravchenko, J.B.; Kucher, A.A.

    1978-01-01

    An extraction atomic absorption method for the determination of copper and iron impurities in rare earth compounds has been developed. The extraction separation of determined elements as hydroxy quinolinates with isobuthyl alcohol was used. It increased the sensitivity of these element determination and excluded the effect of the analysed sample. Cu, Te, Zn, Bi, Sn, In, Ga, Tl and the some other elements can be determined at pH 2.0-3.0 but rare earths are remained in an aqueous phase. The condition of the flame combustion does not change during the introduction of isobutyl extract but the sensitivity of the determination of the elements increased 2-3 times. The limit of Fe determination is 0.01 mg/ml and the limit of Cu determination is 0.014 mg/ml

  18. Determination of impurities in magnesium and aluminium by X-ray fluorescence spectrometry

    International Nuclear Information System (INIS)

    Roca, M.; Diaz-Guerra, J.P.

    1979-01-01

    The determination of traces of Al, Cr, Cu, Fe, Mn, Ni, Pb, Si and of Bi, Cr, Cu, Fe, Ga, Mg, Mn, Ni, Pb, Si, Sn, Ti, V and Zn in samples of magnesium and aluminium, respectively, by means of X-ray fluorescence spectrometry, are studied. An automatic sequential spectrometer with an on-line computer for the treatment of data has been employed. The most suitable measurement parameters have been chosen for each element in order to achieve detection limits to a few p.p.m. For magnesium in the form of drillings the analyses are performed with satisfactory results for most impurities by pressing the samples into briquettes and employing metallic discs as standards. Correction methods for the spectral interferences of Ti on V, and V on Cr have been applied. (author)

  19. Impurities in uranium process solutions

    International Nuclear Information System (INIS)

    Boydell, D.W.

    1980-01-01

    Several uranium purification circuits are presented in tabular form together with the average major impurity levels associated with each. The more common unit operations in these circuits, namely strong- and weak-base ion-exchange, solvent extraction and the precipitation of impurities are then discussed individually. Particular attention is paid to the effect and removal of impurities in each of these four unit operations. (author)

  20. NMR investigation of boron impurities in refined metallurgical grade silicon

    Energy Technology Data Exchange (ETDEWEB)

    Grafe, Hans-Joachim; Loeser, Wolfgang; Schmitz, Steffen; Sakaliyska, Miroslava [Leibniz Institute for Solid State and Materials Research (IFW), Dresden (Germany); Wurmehl, Sabine [Leibniz Institute for Solid State and Materials Research (IFW), Dresden (Germany); Institute for Solid State Physics, Technische Universitaet Dresden (Germany); Eisert, Stefan; Reichenbach, Birk; Mueller, Tim [Adensis GmbH, Dresden (Germany); Acker, Joerg; Rietig, Anja; Ducke, Jana [Department of Chemistry, Faculty for Natural Sciences, Brandenburg Technical University Cottbus-Senftenberg, Senftenberg (Germany)

    2015-09-15

    The nuclear magnetic resonance (NMR) method was applied for tracking boron impurities in the refining process of metallurgical grade (MG) silicon. From the NMR signal of the {sup 11}B isotope at an operating temperature 4.2 K, the boron concentration can be estimated down to the order of 1-10 wppm B. After melting and resolidification of MG-Si alloyed with Ca and Ti, a major fraction of B impurities remains in the Si solid solution as inferred from the characteristic NMR frequency. The alloying element Ti does not form substantial fractions of TiB{sub 2}. Acid leaching of crushed powders of MG-Si alloyed with Ca and Ti can diminish the initial impurity content of B suggesting its accumulation in the grain boundary phases. NMR signals of TiB{sub 2} at 4.2 K and room temperature (RT), and of poly-Si with different B doping at 4.2 K. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. An Evaluation Method for Activation Analysis using Pre-evaluated Contribution of Nuclides with Impurity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Myeong Hyeon; Kim, Song Hyun; Kim, Do Hyun; Shin, Chang Ho [Hanyang University, Seoul (Korea, Republic of); Kim, Gee Suck [KAERI, Daejeon (Korea, Republic of)

    2016-05-15

    Nuclides in radiation facilities become unstable from nuclear reaction. It emits residual radiation to be stable. Some unstable nuclides remain after operation in the material. It continuously emits the radiation, which has a harmful effect to worker when they try maintenance and plant decommissioning. It is known that residual radiation from impurity occupies a large portion of the radiation dose. If impurity concentration is higher than expectation, the effects of residual radiation could be underestimated. Therefore, estimation of residual radiation is repeatedly calculated according to impurity concentration. In this study, an approach estimating the activation was proposed using pre-evaluated nuclide's contribution to reduce the calculation time and effort of worker. In this study, in order to reduce the calculation time and effort of worker, activation analysis method based on pre-evaluated nuclide contribution was proposed. This method was verified using concreate activation problem, which is located in nuclear power plant. The results show that our proposed method has good agreement with Bateman equation.

  2. Refining of Cd and Zn from interstitial impurities using distillation with a ZrFe getter filter

    Directory of Open Access Journals (Sweden)

    Scherban’ A. P.

    2013-10-01

    Full Text Available Behavior of interstitial impurities in Cd and Zn is analysed in terms of thermodynamics. The authors consider reduction reactions of cadmium, zinc and carbon oxides, as well as zinc nitride with the getter material from the Zr-Fe alloy, depending on temperature and vacuum. Optimum initial temperature and vacuum conditions for the processes of deep refining of Cd and Zn from interstitial impurities has been developed. It has been shown experimentally that the proposed refining method provides a more effective cleaning of cadmium and zinc from the interstitial impurities than the distillation without a filter: the impurity content is reduced more than tenfold compared to the concentration in the input metal.

  3. Density profiles and particle fluxes of heavy impurities in the limiter shadow region of a tokamak

    International Nuclear Information System (INIS)

    Claassen, H.A.; Repp, H.

    1980-01-01

    For the case of low impurity concentration, transport calculations have been performed for heavy impurities, in the scrape-off layer plasma of a tokamak with a poloidal ring limiter. The theory is based on the drift-kinetic equations for the various ionization states of the impurity ions taking due consideration of the convection and collision processes. The background plasma and the impurity sources from the torus wall and the limiter surface enter the theory as input parameters. The theory is developed for the first two orders of the drift approximation. Numerical results are given to zero order drift approximation for the radial profiles of density and particle fluxes parallel to the magnetic field. (orig.)

  4. Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); International Center for Young Scientists (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Ohsawa, Takeo; Ross, Emily M., E-mail: emross@hmc.edu; Adachi, Yutaka; Haneda, Hajime [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Sakaguchi, Isao; Takahashi, Ryosuke [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Materials Department, University of California, Santa Barbara, California 93106 (United States); White, Mark E.; Tsai, Min-Ying; Speck, James S., E-mail: speck@ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen Kasuga, Fukuoka 816-8580 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

    2014-03-31

    The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO{sub 2}) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO{sub 2}. The H-concentration of the In-doped SnO{sub 2} films increased to (1–2) × 10{sup 19} cm{sup −3} by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.

  5. Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu{sub 2}SnSe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Marcano, G.; Rincon, C.; de Chalbaud, L. M.; Bracho, D. B.; Perez, G. Sanchez

    2001-08-15

    X-ray powder diffraction by p-type Cu{sub 2}SnSe{sub 3}, prepared by the vertical Bridgman--Stockbarger technique, shows that this material crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a=6.5936(1)Aa, b=12.1593(4)Aa, c=6.6084(3)Aa, and {beta}=108.56(2){sup o}. The temperature variation of the hole concentration p obtained from the Hall effect and electrical resistivity measurements from about 160 to 300 K, is explained as due to the thermal activation of an acceptor level with an ionization energy of 0.067 eV, whereas below 100 K, the conduction in the impurity band dominates the electrical transport process. From the analysis of the p vs T data, the density-of-states effective mass of the holes is estimated to be nearly of the same magnitude as the free electron mass. In the valence band, the temperature variation of the hole mobility is analyzed by taking into account the scattering of charge carriers by ionized and neutral impurities, and acoustic phonons. In the impurity band, the mobility is explained as due to the thermally activated hopping transport. From the analysis of the optical absorption spectra at room temperature, the fundamental energy gap was determined to be 0.843 eV. The photoconductivity spectra show the presence of a narrow band gap whose main peak is observed at 0.771 eV. This band is attributed to a free-to-bound transition from the defect acceptor level to the conduction band. The origin of this acceptor state, consistent with the chemical composition of the samples and screening effects, is tentatively attributed to selenium interstitials. {copyright} 2001 American Institute of Physics.

  6. The effect of resonant magnetic perturbations on the impurity transport in TEXTOR-DED plasmas

    International Nuclear Information System (INIS)

    Greiche, Albert Josef

    2009-01-01

    Thermonuclear fusion provides a new mechanism for the generation of electrical power which has the perspective to serve humanity for several millions of years. One possibility to implement fusion on earth is to magnetically confine hot deuterium tritium plasmas in so called tokamaks. The fusion reactions take place in the hot plasma core. Each of the fusion reactions between deuterium and tritium yields 17.6 MeV which can be used in the process of generating electrical power. Impurities contaminate the plasma which then is cooled down and diluted. This leads to a reduction of the fusion reactions and in consequence the energy yield. The transport behaviour of the impurities in the plasma is not fully understood up to now. Nevertheless, experiments have shown that the application of resonant magnetic perturbations (RMP) can control the impurity content in the plasma. The dynamic ergodic divertor (DED) on the tokamak Textor is able to induce static and dynamic RMPs. During the application of RMPs transient impurity transport experiments with argon have been performed and the time evolution of the impurity concentrations have been monitored. The line emission intensity of the impurities in the plasma is measured in the vacuum ultraviolet (VUV) and in the soft X-ray (SXR) with the absolutely calibrated VUV spectrometer Hexos and SXR PIN diodes, respectively. The analysis of the transient impurity transport experiments is performed with the help of the transport code Strahl. The impurity flows in Strahl are described by a combination of a diffusive and a convective flow. In the computing process the code solves the coupled set of continuity equations of each of the ionization stages of an impurity. With this method the time evolution of the impurity ion densities and the line emission intensities of the ionization stages can be computed. The adaption to the experimental measurements is performed with the help of the diffusion coefficient and the drift velocity which

  7. Influence of an ergodic magnetic limiter on the impurity content in a tokamak

    International Nuclear Information System (INIS)

    Engelhardt, W.; Feneberg, W.

    1978-01-01

    This work deals with the properties of an ergodic magnetic limiter and presents calculations concerning the reduction of the impurity rate in a tokamak by a boundary sheath with decreased confinement time. The layer is produced by resonant helical windings superposed on an equilibrium magnetic field with closed magnetic surfaces. The transport coefficients in the boundary layer, which yield the temperature and density distribution, are obtained from the movement of particles along a stochastic magnetic field. The resulting line density can be made a factor of ten higher than is expected for a poloidal divertor experiment. From this it is concluded that all impurities coming from the wall will be ionized in the boundary layer. The concentration of the impurities in the plasma center is calculated according to a model which uses an anomalous diffusion coefficient being consistent with the ergodization in the boundary layer. The resulting concentration can be reduced proportional to the factor (nsub(e)Dsub(e)) -1 where nsub(e) and Dsub(e) are electron density and diffusion coefficient in the boundary layer. (Auth.)

  8. Theoretical Study of Radiation from a Broad Range of Impurity Ions for Magnetic Fusion Diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Safronova, Alla [Univ. of Nevada, Reno, NV (United States)

    2014-03-14

    Spectroscopy of radiation emitted by impurities plays an important role in the study of magnetically confined fusion plasmas. The measurements of these impurities are crucial for the control of the general machine conditions, for the monitoring of the impurity levels, and for the detection of various possible fault conditions. Low-Z impurities, typically present in concentrations of 1%, are lithium, beryllium, boron, carbon, and oxygen. Some of the common medium-Z impurities are metals such as iron, nickel, and copper, and high-Z impurities, such as tungsten, are present in smaller concentrations of 0.1% or less. Despite the relatively small concentration numbers, the aforementioned impurities might make a substantial contribution to radiated power, and also influence both plasma conditions and instruments. A detailed theoretical study of line radiation from impurities that covers a very broad spectral range from less than 1 Å to more than 1000 Å has been accomplished and the results were applied to the LLNL Electron Beam Ion Trap (EBIT) and the Sustained Spheromak Physics Experiment (SSPX) and to the National Spherical Torus Experiment (NSTX) at Princeton. Though low- and medium-Z impurities were also studied, the main emphasis was made on the comprehensive theoretical study of radiation from tungsten using different state-of-the-art atomic structure codes such as Relativistic Many-Body Perturbation Theory (RMBPT). The important component of this research was a comparison of the results from the RMBPT code with other codes such as the Multiconfigurational Hartree–Fock developed by Cowan (COWAN code) and the Multiconfiguration Relativistic Hebrew University Lawrence Atomic Code (HULLAC code), and estimation of accuracy of calculations. We also have studied dielectronic recombination, an important recombination process for fusion plasma, for variety of highly and low charged tungsten ions using COWAN and HULLAC codes. Accurate DR rate coefficients are needed for

  9. Instrumental neutron-activation determination of impurities in lead and titanium compounds

    Energy Technology Data Exchange (ETDEWEB)

    Popova, I L

    1980-01-01

    Instrumental neutron-activation analysis was used to determine 22 impurities in lead and titanium compounds (e.g. PbO, Pb/NO3/2, and TiO2) used as raw materials for ferroelectrics. Five elements (Al, V, Mn, Sc, and Se) were determined by short-lived isotopes and 17 elements were determined by long-lived isotopes. The detection limits were 7 x 10 to the -3rd to 2 x 10 to the -8th %. A substantial difference in concentrations of certain impurity elements has been found in different series of lead and titanium oxides of similar purity.

  10. The effect of ICRF antenna phasing on metal impurities in TFTR

    International Nuclear Information System (INIS)

    Stevens, J.E.; Bush, C.; Colestock, P.L.; Oak Ridge National Lab., TN; AN Ukrainskoj SSR, Kharkov

    1989-07-01

    ICRF power levels of up to 2.8 MW were achieved during the 1988 experimental run on TFTR. Metal impurity concentrations (Ti, Cr, Fe, Ni) and Z eff were monitored during ICRF heating by x-ray pulse height analysis and uv spectroscopy. Antenna phasing was the key variable affecting ICRF performance. No increase in metallic impurities was observed for P rf approx lt 2.8 MW with the antenna straps 0-Π, while a measurable increase in titanium (Faraday screen material) was observed for P rf approx gt 1.0 MW with 0-0 phasing. 18 refs., 8 figs

  11. Application of uranium impurity data for material characterization in nuclear safeguards

    International Nuclear Information System (INIS)

    Penkin, M.V.; Boulyga, S.F.; Fischer, D.M.

    2016-01-01

    Samples of materials involved in the conversion of uranium into nuclear-grade products are collected to support the verification of States' declarations and to look for indications of possible undeclared materials and activities. Samples are analysed by several laboratories to determine concentrations of about sixty impurities; the data consistency is addressed through the unified reporting requirements, the use of common reference materials, and via inter-laboratory comparisons. The impurity analysis results, along with other essential parameters, are interpreted to judge sample conformity to the relevant specifications, to evaluate the facility design information, to assess material provenance and intended use. (author)

  12. Neo-classical impurity transport

    International Nuclear Information System (INIS)

    Stringer, T.E.

    The neo-classical theory for impurity transport in a toroidal plasma is outlined, and the results discussed. A general account is given of the impurity behaviour and its dependence on collisionality. The underlying physics is described with special attention to the role of the poloidal rotation

  13. Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

    Science.gov (United States)

    Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

    2018-04-01

    The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

  14. Dynamical impurity problems

    International Nuclear Information System (INIS)

    Emery, V.J.; Kivelson, S.A.

    1993-01-01

    In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class

  15. Dynamical impurity problems

    Energy Technology Data Exchange (ETDEWEB)

    Emery, V.J. [Brookhaven National Lab., Upton, NY (United States); Kivelson, S.A. [California Univ., Los Angeles, CA (United States). Dept. of Physics

    1993-12-31

    In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class.

  16. Trace impurities analysis of aluminum nanopowder and its air combustion product

    Science.gov (United States)

    Kabanov, Denis V.; Merkulov, Viktor G.; Mostovshchikov, Andrey V.; Ilyin, Alexander P.

    2018-03-01

    Neutron activation analysis (NAA) allows estimating micro-concentrations of chemicals and analyzes tens of elements at one measurement. In this paper we have used NAA to examine metal impurities in the electroexplosive aluminum nanopowder (ANP) and its air-combustion products produced by burning in crucibles in an electric and magnetic field and without application of fields. It has been revealed that in the air-combustion products impurities content is reduced. The presence of impurities in the ANP is associated with electric explosion technology (erosion of electrode and chamber materials) and with the previous development of various nanopowders in the composition of this electric explosive device. NAA is characterized by a high sensitivity and reproducibility to elements content and low metering error. According to the obtained results it has been concluded that NAA metering error does not exceed 10% in the wide concentration range, from 0.01 to 2100 ppm, particularly. Besides, there is high reproducibility of the method that has been proved on macro-elements of Ca (>1000 ppm), Fe (>2000 ppm), and micro-elements as Sm, U, Ce, Sb, Th, etc. (<0.9 ppm). It is recommended to use an individual unit for the production of pure metal powders for electric explosion and production of nanopowders, which is possible with mass production of nanopowders.

  17. Detection of Sn(II) ions via quenching of the fluorescence of carbon nanodots

    International Nuclear Information System (INIS)

    Mohd Yazid, S.N.A.; Chin, S.F.; Pang, S.C.; Ng, S.M.

    2013-01-01

    We report that fluorescent carbon nanodots (C-dots) can act as an optical probe for quantifying Sn(II) ions in aqueous solution. C-dots are synthesized by carbonization and surface oxidation of preformed sago starch nanoparticles. Their fluorescence is significantly quenched by Sn(II) ions, and the effect can be used to determine Sn(II) ions. The highest fluorescence intensity is obtained at a concentration of 1.75 mM of C-dots in aqueous solution. The probe is highly selective and hardly interfered by other ions. The quenching mechanism appears to be predominantly of the static (rather than dynamic) type. Under optimum conditions, there is a linear relationship between fluorescence intensity and Sn(II) ions concentration up to 4 mM, and with a detection limit of 0.36 μM. (author)

  18. Influence of stresses on superconducting properties of Nb3Sn conductors

    International Nuclear Information System (INIS)

    Suenaga, M.; Luhman, T.S.; Sampson, W.B.; Onishi, T.; Klamut, C.J.

    1978-01-01

    This investigation of the degradation in the superconducting properties of Nb 3 Sn conductors when subjected to mechanical strain can be divided into the following areas: (I) monofilamentary Nb 3 Sn wires, (II) multifilamentary Nb 3 Sn conductors and wires, (III) effects of additives to Nb 3 Sn, (IV) mechanisms for degradation, and (V) construction of test facilities. Efforts to the present time have been concentrated in the investigation of T/sub c/, J/sub c/, and H/sub c2/ variations in monofilamentary wires. The most important finding in this study is that a Nb 3 Sn composite wire can sustain an effective mechanical strain well beyond ''1%'' if a proper ratio of the matrix to the Nb core has been chosen

  19. Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

    Science.gov (United States)

    Das, Arkaprava; Singh, Fouran

    2018-04-01

    Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

  20. Impurity decoration of native vacancies in Ga and N sublattices of gallium nitride

    OpenAIRE

    Hautakangas, Sami

    2005-01-01

    The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied by positron annihilation spectroscopy. It is shown that vacancy defects are formed in Ga or N sublattices depending on the doping of the material. Vacancies are decorated with impurity atoms leading to the compensation of the free carriers of the samples. In addition, the vacancy clusters are found to be present in significant concentrations in n-...

  1. Facile, low temperature synthesis of SnO_2/reduced graphene oxide nanocomposite as anode material for lithium-ion batteries

    International Nuclear Information System (INIS)

    Hou, Chau-Chung; Brahma, Sanjaya; Weng, Shao-Chieh; Chang, Chia-Chin; Huang, Jow-Lay

    2017-01-01

    Highlights: • Facile, one-pot, low temperature synthesis of SnO_2-RGO composite. • In-situ reduction of graphene oxide and growth of SnO_2 nanoparticle. • Concentration of reductant during synthesis affects the properties significantly. • SnO_2-RGO composite shows good rate capability and stable capacitance. • Synthesis method is energy efficient and scalable for other metal oxides. - Abstract: We demonstrate a facile, single step, low temperature and energy efficient strategy for the synthesis of SnO_2-reduced graphene oxide (RGO) nanocomposite where the crystallization of SnO_2 nanoparticles and the reduction of graphene oxide takes place simultaneously by an in situ chemical reduction process. The electrochemical property of the SnO_2-RGO composite prepared by using low concentrations of reducing agent shows better Li storage performance, good rate capability (378 mAh g"−"1 at 3200 mA g"−"1) and stable capacitance (522 mAh g"−"1 after 50 cycles). Increasing the reductant concentration lead to crystallization of high concentration of SnO_2 nanoparticle aggregation and degrade the Li ion storage property.

  2. Identification and characterization of potential impurities of donepezil.

    Science.gov (United States)

    Krishna Reddy, K V S R; Moses Babu, J; Kumar, P Anil; Chandrashekar, E R R; Mathad, Vijayavitthal T; Eswaraiah, S; Reddy, M Satyanarayana; Vyas, K

    2004-09-03

    Five unknown impurities ranging from 0.05 to 0.2% in donepezil were detected by a simple isocratic reversed-phase high performance liquid chromatography (HPLC). These impurities were isolated from crude sample of donepezil using isocratic reversed-phase preparative high performance liquid chromatography. Based on the spectral data (IR, NMR and MS), the structures of these impurities were characterised as 5,6-dimethoxy-2-(4-pyridylmethyl)-1-indanone (impurity I), 4-(5,6-dimethoxy-2,3-dihydro-1H-2-indenylmethyl) piperidine (impurity II), 2-(1-benzyl-4-piperdylmethyl)-5,6-dimethoxy-1-indanol (impurity III) 1-benzyl-4(5,6-dimethoxy-2,3-dihydro-1H-2-indenylmethyl) piperidine (impurity IV) and 1,1-dibenzyl-4(5,6-dimethoxy-1-oxo-2,3-dihydro-2H-2-indenylmethyl)hexahydropyridinium bromide (impurity V). The synthesis of these impurities and their formation was discussed.

  3. Isomer shifts and chemical bonding in crystalline Sn(II) and Sn(IV) compounds

    International Nuclear Information System (INIS)

    Terra, J.; Guenzburger, D.

    1991-01-01

    First-principles self-consistent Local Density calculations of the electronic structure of clusters representing Sn(II) (SnO, SnF 2 , SnS, SnSe) and Sn(IV) (SnO 2 , SnF 4 ) crystalline compounds were performed. Values of the electron density at the Sn nucleus were obtained and related to measured values of the Moessbauer Isomer Shifts reported in the literature. The nuclear parameter of 119 Sn derived was ΔR/R=(1.58±0.14)x10 -4 . The chemical bonding in the solids was analysed and related to the electron densities obtained. (author)

  4. Evaluation of sup(99m)Tc-Sn-colloid on liver scintigram

    Energy Technology Data Exchange (ETDEWEB)

    Matsuyuki, Y; Kanao, K; Honda, M; Ishihara, S [Sumitomo Hospital, Osaka (Japan)

    1975-04-01

    sup(99m)Tc-Sn-colloid injectable solution and Sn-colloid preparation set were used for nuclear medical examination of the liver and their efficiency was discussed. Both sup(99m)Tc-Sn-colloid injectable solution and Sn-colloid preparation set showed the same kinetics in vivo, and the sup(99m)Tc-Sn-colloid rapidly disappeared from the serum and concentrated to the liver and spleen. Comparing /sup 198/Au-colloid, sup(99m)Tc-Sn-colloid could be increased the administration dose, and provided easy examination within short time period, easy observation from multiple directions, and improvement of resolution by scinticamera. Imaging of the spleen with sup(99m)Tc-Sn-colloid was slightly superior to that with sup(99m)Tc-sulfur-colloid. sup(99m)Tc-Sn-colloid injectable solution which required no procedure of labeling was evaluated as the most safe and easy technique. Side effects were not recognized. As the results, already made preparation, such as sup(99m)Tc-Sn-colloid injectable solution, which provided easy preparation with less absorbed dose of the tissue and high resolution would be frequently required.

  5. Evaluation of sup(99m)Tc-Sn-colloid on liver scintigram

    International Nuclear Information System (INIS)

    Matsuyuki, Yoshihiko; Kanao, Keisuke; Honda, Minoru; Ishihara, Shizumori

    1975-01-01

    sup(99m)Tc-Sn-colloid injectable solution and Sn-colloid preparation set were used for nuclear medical examination of the liver and their efficiency was discussed. Both sup(99m)Tc-Sn-colloid injectable solution and Sn-colloid preparation set showed the same kinetics in vivo, and the sup(99m)Tc-Sn-colloid rapidly disappeared from the serum and concentrated to the liver and spleen. Comparing 198 Au-colloid, sup(99m)Tc-Sn-colloid could be increased the administration dose, and provided easy examination within short time period, easy observation from multiple directions, and improvement of resolution by scinticamera. Imaging of the spleen with sup(99m)Tc-Sn-colloid was slightly superior to that with sup(99m)Tc-sulfur-colloid. sup(99m)Tc-Sn-colloid injectable solution which required no procedure of labeling was evaluated as the most safe and easy technique. Side effects were not recognized. As the results, already made preparation, such as sup(99m)Tc-Sn-colloid injectable solution, which provided easy preparation with less absorbed dose of the tissue and high resolution would be frequently required. (Mukohata, S.)

  6. Study of GeSn Alloy for Low Cost Monolithic Mid Infrared Quantum Well Sensor

    Directory of Open Access Journals (Sweden)

    Prakash PAREEK

    2017-02-01

    Full Text Available This paper focuses on theoretical study of Tin incorporated group IV alloys particularly GeSn and design of quantum well sensor for mid infrared sensing applications. Initially, the physics behind the selection of material for midinfrared sensor is explained. The importance of controlling strain in GeSn alloy is also explained. The physical background and motivation for incorporation of Tin(Sn in Germanium is briefly narrated. Eigen energy states for different Sn concentrations are obtained for strain compensated quantum well in G valley conduction band (GCB, heavy hole (HH band and light hole (LH band by solving coupled Schrödinger and Poisson equations simultaneously. Sn concentration dependent absorption spectra for HH- GCB transition reveals that significant absorption observed in mid infrared range (3-5 µm. So, Ge1-x Snx quantum well can be used for mid infrared sensing applications.

  7. Electrical characterisation of Sn doped InAs grown by MOVPE

    International Nuclear Information System (INIS)

    Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

    2008-01-01

    The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Quantitative determination of mineral coal impurities from Brazil through optical emission spectrography technique

    International Nuclear Information System (INIS)

    Clain, Almir Faria

    1982-01-01

    The aim of the present research was to develop a spectrographic technique to determine the highest possible number of the chemical elements micro-constituents of Brazilian mineral coals. The experimental technique developed corresponds to the so called total-burning procedure. Coal samples were calcined to ashes at 400°C and then totally burned in graphite electrodes by a DC arc. The spectrographic measurements were made in a Jarrell-Ash emission spectrograph, Ebert mounting type, model Mark IV. An inert atmosphere chamber (for a gaseous mixture 20% 0 2 and 80% air) and a seven step rotating sector were used as main accessories. The analytical curves for the different elements, were obtained using synthetic standards in the concentration range of 10 to 1.000 ppm, and the standards as well as the coal ashes were diluted with spectrographically pure graphite in 1:1 ratio. Seventeen coal samples from different shells and strata of Morungava and Charqueadas mines - Rio Grande do Sul State - were analyzed to test the proposed technique, being possible to determine the following elements: B, Be, Bi, Cd, Co, Cr, Cu, Ga,Pb, Ge, Mn, Mo, Ni, Sn, Sb, V, Y, Zn and Zr. The coefficient of variation was 14% in average for all the elements and the sensitivity was so that the majority of the impurities present in the coals were analyzed. (author)

  9. Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Tuan, Pham Van; Hieu, Le Trung; Nga, La Quynh [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Dung, Nguyen Duc [Advanced Institute of Science and Technology, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam)

    2016-11-15

    We report the characteristic photoluminescence (PL) spectra of erbium ion (Er{sup 3+})-doped tin dioxide (SnO{sub 2})nanoparticles. The materials were prepared via hydrothermal method at 180 °C with in 20 h by using various Er{sup 3+} ion concentrations ranging from 0.0 to 1.0 at%. After the synthesis, the materials were characterized through X-ray diffraction and high-resolution transmission electron microscopy. Crystallite SnO{sub 2} and its average particle diameter of approximately 5 nm did not change with Er{sup 3+} ion dopant concentration. Photoluminescence spectra showed the characteristic light emission from the Er{sup 3+} ions. The PL excitation spectra referred to an efficient energy transfer to Er{sup 3+} ions in the presence of SnO{sub 2}nanoparticles. The most intense Er-related emission of SnO{sub 2}:Er{sup 3+} nanoparticles in near infrared region was found in samples containing an Er{sup 3+} ion concentration of 0.25 at%. Although the absorption bandgaps of the materials were identified at approximately 3.8 eV, we found that efficient excitation comes with low excitation energy band edge. Excitation is possibly involved in shallow defects in SnO{sub 2} nanoparticles.

  10. Fabrication, characterization and application of Cu{sub 2}ZnSn(S,Se){sub 4} absorber layer via a hybrid ink containing ball milled powders

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chunran [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); College of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Yao, Bin, E-mail: binyao@jlu.edu.cn [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); Li, Yongfeng, E-mail: liyongfeng@jlu.edu.cn [Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); Xiao, Zhenyu [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China); Ding, Zhanhui [Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012 (China); Zhao, Haifeng; Zhang, Ligong; Zhang, Zhenzhong [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033 (China)

    2015-09-15

    Highlights: • CZTS powders are prepared from binary sulfides by a low cost ball milling process. • Elaborated on phase evolution and formation mechanism of CZTS. • Proposed a hybrid ink approach to resolve difficulty in deposition of CZTS film. • CZTSSe solar cells with highest efficiency of 4.2% are fabricated. • Small-grained CZTS layer hinders the collection of minority carriers. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) powder with kesterite structure was prepared by ball milling of mixture of Cu{sub 2}S, ZnS and SnS{sub 2} powders for more than 15 h. By dispersing the milled CZTS powder in a Cu-, Zn- and Sn-chalcogenide precursor solution, a hybrid ink was fabricated. With the hybrid ink, a precursor CZTS film was deposited on Mo coated soda-lime glass by spin-coating. In order to obtain Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber film with kesterite structure, the CZTS film was annealed at 560 °C for 15 min in Se ambient. It is demonstrated that the annealed film is dominated by a thick layer of kesterite CZTSSe with larger grain size and Cu{sub 8}Fe{sub 3}Sn{sub 2}(S,Se){sub 12} impurity phase with the exception of a very thin layer of kesterite CZTS with smaller grain size at interface between the CZTSSe and Mo layers. Solar cell device was fabricated by using the annealed CZTSSe film as absorber layer, and its conversion efficiency reached 4.2%. Mechanism of formation of the kesterite CZTS powder and CZTSSe film as well as effect of impurity phases on conversion efficiency are discussed in the present paper. The present results suggest that the hybrid ink approach combining with ball milling is a simple, low cost and promising method for preparation of kesterite CZTSSe absorber film and CZTSSe-based solar cell.

  11. Surface and bulk 4f-photoemission spectra of CeIn3 and CeSn3

    International Nuclear Information System (INIS)

    Kim, H.; Tjernberg, O.; Chiaia, G.; Kumigashira, H.; Takahashi, T.; Duo, L.; Sakai, O.; Kasaya, M.; Lindau, I.

    1997-01-01

    Resonant photoemission spectroscopy was performed on CeIn 3 and CeSn 3 at the 4d-4f and 3d-4f core thresholds. Using the different surface sensitivity between the two photon energies, surface and bulk 4f-photoemission spectra were derived for both compounds. With the noncrossing approximation of the Anderson impurity model, the 4d-4f resonant spectra together with the surface and bulk spectra were self-consistently analyzed to obtain the microscopic parameters such as the 4f-electron energy and the hybridization strength with conduction electrons. The result shows a substantial difference in these parameters between the surface and the bulk, indicating that it is important to take into account the surface effect in analyzing photoemission spectra of Ce compounds. It is also found that the 4f surface core-level shift is different between CeIn 3 and CeSn 3 . copyright 1997 The American Physical Society

  12. Impurity Induced Phase Competition and Supersolidity

    Science.gov (United States)

    Karmakar, Madhuparna; Ganesh, R.

    2017-12-01

    Several material families show competition between superconductivity and other orders. When such competition is driven by doping, it invariably involves spatial inhomogeneities which can seed competing orders. We study impurity-induced charge order in the attractive Hubbard model, a prototypical model for competition between superconductivity and charge density wave order. We show that a single impurity induces a charge-ordered texture over a length scale set by the energy cost of the competing phase. Our results are consistent with a strong-coupling field theory proposed earlier in which superconducting and charge order parameters form components of an SO(3) vector field. To discuss the effects of multiple impurities, we focus on two cases: correlated and random distributions. In the correlated case, the CDW puddles around each impurity overlap coherently leading to a "supersolid" phase with coexisting pairing and charge order. In contrast, a random distribution of impurities does not lead to coherent CDW formation. We argue that the energy lowering from coherent ordering can have a feedback effect, driving correlations between impurities. This can be understood as arising from an RKKY-like interaction, mediated by impurity textures. We discuss implications for charge order in the cuprates and doped CDW materials such as NbSe2.

  13. Spectrographic determination of impurities in enriched uranium solutions; Determinacion espectrografica de impurezas en soluciones de uranio enriquecido

    Energy Technology Data Exchange (ETDEWEB)

    Capdevila, C; Roca, M

    1980-07-01

    A spectrographic procedure for the determination of trace amounts of Al, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Fe, K, L i , Hg, Mn, Mo, Na, Nb, Ni, P, Pb, Ru, Sb, Sn, Sr, Ti, V, Zn, and Zr in enriched uranyl nitrate solutions from the reprocessing of spent nuclear fuels is described. After removal of uranium by either TBP or TNOA solvent extraction, the aqueous phase Is analysed by the graphite spark technique. TBP is adequate for all impurities, excepting boron and phosphorus; both of these elements can sat is factory be determined by using TNOA after the addition of mannitol to avoid boron losses. (Author) 4 refs.

  14. The impurity transport in HT-6M tokamak

    International Nuclear Information System (INIS)

    Xu Wei; Wan Baonian; Xie Jikang

    2003-01-01

    The space-time profile of impurities has been measured with a multichannel visible spectroscopic detect system and UV rotation-mirror system in the HT-6M tokamak. An ideal impurity transport code has been used to simulate impurities (carbon and oxygen) behaviour during the OHM discharge. The profiles of impurities diffusion and convection coefficient, impurities ion densities in different ionized state, loss power density and effective charge number have been derived. The impurity behaviour during low-hybrid current drive has also been analyzed, the results show that the confinement of particles, impurities and energy has been improved, and emission power and effective charge number have been reduced

  15. States in 118Sn from 117Sn(d,p) 118Sn at 12 MeV

    International Nuclear Information System (INIS)

    Frota-Pessoa, E.

    1983-01-01

    118 Sn energy levels up to = 5.2 MeV excitation energy are studied in the reaction 117 Sn (d,p) 118 Sn. Deuterons had a bombarding energy of 12 MeV. The protons were analized by a magnetic spectrograph. The detector was nuclear emulsion and the resolution in energy about 10 KeV. The distorted-wave analysis was used to determine l values and spectroscopic strengths. Centers of gravity and the sums of reduced spectroscopic factors are presented for the levels when it was possible to determine the S' value. 66 levels of excitation energy were found which did not appear in previous 117 Sn (d,p) reactions. 40 levels were not found previously in any reaction giving 118 Sn. The results are compared with the known ones. (Author) [pt

  16. Effect of alloying Mo on mechanical strength and corrosion resistance of Zr-1% Sn-1% Nb-1% Fe alloy

    International Nuclear Information System (INIS)

    Sugondo

    2011-01-01

    It had been done research on Zr-1%Sn-1%Nb-1%Fe-(x)%Mo alloy. The ingot was prepared by means of electrical electrode technique. The chemical analysis was identified by XRF, the metallography examination was perform by an optical microscope, the hardness test was done by Vickers microhardness, and the corrosion test was done in autoclave. The objective of this research were making Zr-1%Sn-1%Nb-1%Fe-(x)%Mo alloy with Mo concentration; comparing effect of Mo concentration to metal characteristics of Zr-1%Sn-1%Nb-1%Fe which covered microstructure; composition homogeneity, mechanical strength; and corrosion resistance in steam, and determining the optimal Mo concentration in Zr-1%Sn-1%Nb-1%Fe-(x)% Mo alloy for nuclear fuel cladding which had corrosion resistance and high hardness. The results were as follow: The alloying Mo refined grains at concentration in between 0,1%-0,3% and the concentration more than that could coarsened grains. The hardness of the Zr-1%Sn-1%Nb-1%Fe-(x)%Mo alloy was controlled either by the flaw or the dislocation, the intersection of the harder alloying element, the solid solution of the alloying element and the second phase formation of ZrMo 2 . The corrosion rate of the Zr-1%Sn-1%Nb-1%Fe-(x)%Mo alloy was controlled by the second phase of ZrMo 2 . The 0.3% Mo concentration in Zr-1%Sn-1%Nb-1%Fe-(x)%Mo alloy was the best for second phase formation. The Mo concentration in between 0,3-0,5% in Zr-1%Sn-1%Nb-1%Fe-(x)%Mo alloy was good for the second phase formation and the solid solution. (author)

  17. Mechanisms of impurity diffusion in rutile

    International Nuclear Information System (INIS)

    Peterson, N.L.; Sasaki, J.

    1984-01-01

    Tracer diffusion of 46 Sc, 51 Cr, 54 Mn, 59 Fe, 60 Co, 63 Ni, and 95 Zr, was measured as functions of crystal orientation, temperature, and oxygen partial pressure in rutile single crystals using the radioactive tracer sectioning technique. Compared to cation self-diffusion, divalent impurities (e.g., Co and Ni) diffuse extremely rapidly in TiO 2 and exhibit a large anisotropy in the diffusion behavior; divalent-impurity diffusion parallel to the c-axis is much larger than it is perpendicular to the c-axis. The diffusion of trivalent impurity ions (Sc and Cr) and tetravalent impurity ions (Zr) is similar to cation self-diffusion, as a function of temperature and of oxygen partial pressure. The divalent impurity ions Co and Ni apparently diffuse as interstitial ions along open channels parallel to the c-axis. The results suggest that Sc, Cr, and Zr ions diffuse by an interstitialcy mechanism involving the simultaneous and cooperative migration of tetravalent interstitial titanium ions and the tracer-impurity ions. Iron ions diffused both as divalent and as trivalent ions. 8 figures

  18. Long afterglow property of Er"3"+ doped Ca_2SnO_4 phosphor

    International Nuclear Information System (INIS)

    Zhang, Dongyun; Shi, Mingming; Sun, Yiwen; Guo, Yunyun; Chang, Chengkang

    2016-01-01

    A novel green emitting long afterglow phosphor, Er"3"+ -doped Ca_2SnO_4 (Ca_2SnO_4:Er"3"+), was prepared successfully via a traditional high temperature solid–state reaction method. Its properties have been characterized and analyzed by utilizing x-ray diffraction (XRD), photoluminescence spectroscope (PLS), afterglow decay curve (ADC) and thermal luminescence spectroscope (TLS). Three main emission peaks of PLS locate at 524, 550 and 668 nm, corresponding to CIE chromaticity coordinates of x = 0.326, y = 0.6592. An optimal doping concentration of Er"3"+ of 2% was determined. The Ca_2SnO_4:Er"3"+ phosphors showed a typical triple-exponential afterglow decay behavior when the UV source was switched off. Thermal simulated luminescence study indicated that the persistent afterglow of Ca_2SnO_4:2 mol% Er"3"+ phosphors was generated by the suitable electron or hole traps which were resulted from the doping the Ca_2SnO_4 host with rare-earth ions (Er"3"+). - Highlights: • A novel green emitting long afterglow phosphor, Ca_2SnO_4:Er"3"+, was prepared. • An optimal doping concentration of Er"3"+ of 2% was determined. • After the UV source was turned off, the Ca_2SnO_4:Er"3"+ showed a typical triple-exponential afterglow decay behavior. • CIE chromaticity coordinates results confirmed a green light emitting of the Ca_2SnO_4:Er"3"+. • The persistent afterglow of the Ca_2SnO_4:Er"3"+ was attributed to suitable electron or hole traps.

  19. Terbium doped SnO2 nanoparticles as white emitters and SnO2:5Tb/Fe3O4 magnetic luminescent nanohybrids for hyperthermia application and biocompatibility with HeLa cancer cells.

    Science.gov (United States)

    Singh, Laishram Priyobarta; Singh, Ningthoujam Premananda; Srivastava, Sri Krishna

    2015-04-14

    SnO2:5Tb (SnO2 doped with 5 at% Tb(3+)) nanoparticles were synthesised by a polyol method and their luminescence properties at different annealing temperatures were studied. Characterization of nanomaterials was done by X-ray diffraction (XRD), Fourier transformation infrared spectroscopy (FTIR), transmission electron microscopy (TEM) and vibrating sample magnetometry (VSM). XRD studies indicate that the prepared nanoparticles were of tetragonal structures. Upon Tb(3+) ion incorporation into SnO2, Sn(4+) changes to Sn(2+) and, on annealing again at higher temperature, Sn(2+) changes to Sn(4+). The prepared nanoparticles were spherical in shape. Sn-O vibrations were found from the FTIR studies. In photoluminescence studies, the intensity of the emission peaks of Tb(3+) ions increases with the increase of annealing temperature, and emission spectra lie in the region of white emission in the CIE diagram. CCT calculations show that the SnO2:5Tb emission lies in cold white emission. Quantum yields up to 38% can be obtained for 900 °C annealed samples. SnO2:5Tb nanoparticles were well incorporated into the PVA polymer and such a material incorporated into the polymer can be used for display devices. The SnO2:5Tb/Fe3O4 nanohybrid was prepared and investigated for hyperthermia applications at different concentrations of the nanohybrid. This achieves a hyperthermia temperature (42 °C) under an AC magnetic field. The hybrid nanomaterial SnO2:5Tb/Fe3O4 was found to exhibit biocompatibility with HeLa cells (human cervical cancer cells) at concentrations up to 74% for 100 μg L(-1). Also, this nanohybrid shows green emission and thus it will be helpful in tracing magnetic nanoparticles through optical imaging in vivo and in vitro application.

  20. Hyperfine magnetic fields at 57Fe and 119Sn nuclei in the Fe48Rh52 alloy under pressure

    International Nuclear Information System (INIS)

    Nikolaev, I.N.; Potapov, V.N.; Bezotosnyj, I.Yu.; Mar'in, V.P.

    1978-01-01

    The pressure dependences of the hyperfine magnetic fields, H, and isomer shifts epsilon at the 57 Fe and 119 Sn nuclei in the Fe 48 Rh 52 alloy with an admixture of approximately 1 at. % Sn are measured by the Moessbauer effect technique. Under pressure epsilon decreases this signifying an increase (for 57 Fe) or decrease (for 119 Sn) of the s-electron density at the nuclei. In the ferromagnetic (FM) state at 398 K, ΔH/HΔp=(-2.8+-0.2)x10 -3 kbar -1 for 57 Fe and ΔH/HΔp=(-4.8+-0.8)x10 -3 kbar -1 for 119 Sn. In the antiferromagnetic (AFM) state at 78 K, ΔH/HΔp approximately 0 for 57 Fe and ΔH/HΔp=(-6.2+-1.0)x10 -3 kbar -1 for 119 Sn. The results for 57 Fe in the FM state can be ascribed to the strong dependence of the alloy matrix magnetization on the pressure and in the AFM state to the absence of local polarization of s-similar collectivized electrons and to the independence of the magnetic moments of the Fe ions of pressure. The causes of the different effect of pressure on the magnetic moments of Fe ions in the FM and AFM states are discussed. The results for 119 Sn in the FM and AFM states of the alloy are in agreement with the model of hyperfine fields at impurity Sn atoms in the magnetic matrices proposed earlier. The radial dependence of the hyperfine field at the 119 Sn nuclei in the AFM state is estimated and it is found that H(r) is stronger than r -9

  1. Simulation of Industrial Wastewater Treatment from the Suspended Impurities into the Flooded Waste Mining Workings

    Science.gov (United States)

    Bondareva, L.; Zakharov, Yu; Goudov, A.

    2017-04-01

    The paper is dedicated to the mathematical model of slurry wastewater treatment and disposal in a flooded mine working. The goal of the research is to develop and analyze the mathematical model of suspended impurities flow and distribution. Impurity sedimentation model is under consideration. Due to the sediment compaction problem solution domain can be modified. The model allows making a forecast whether volley emission is possible. Numerical simulation results for “Kolchuginskaya” coal mine presented. Impurity concentration diagrams in outflow corresponding to the real full-scale data obtained. Safely operation time mine workings like a wastewater treatment facility are estimated. The carried out calculations demonstrate that the method of industrial wastewater treatment in flooded waste mine workings can be put into practice but it is very important to observe all the processes going on to avoid volley emission of accumulated impurities.

  2. Effects of interlayer Sn-Sn lone pair interaction on the band gap of bulk and nanosheet SnO

    Science.gov (United States)

    Umezawa, Naoto; Zhou, Wei

    2015-03-01

    Effects of interlayer lone-pair interactions on the electronic structure of SnO are firstly explored by the density-functional theory. Our comprehensive study reveals that the band gap of SnO opens as increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consists of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalyst for hydrogen evolution. This work is supported by the Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) program.

  3. Tantalum(V) impurity extraction by octanol from niobium(V) fluoride solutions

    International Nuclear Information System (INIS)

    Majorov, V.G.; Nikolaev, A.I.; Kopkov, V.K.

    2002-01-01

    The conditions of the niobium and tantalum extraction separation by octanol in the fluoride solutions, depending on the metals and free hydrofluoric acid concentration as well as on the organic and water phases voluminous relation, are studied for the purpose of developing the technology of niobium deep purification from the tantalum impurities. The technological scheme of the niobium solutions(V) extraction purification from the tantalum impurities(V), which provides for obtaining the niobium oxide(V), containing less than 0.005 mass % Ta 2 O 5 , is proposed on the basis of the established optimal separation conditions. The possibility of using the developed technology by the pyrochlore reprocessing is indicated [ru

  4. Facile, low temperature synthesis of SnO{sub 2}/reduced graphene oxide nanocomposite as anode material for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Chau-Chung; Brahma, Sanjaya; Weng, Shao-Chieh [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70001, Taiwan, ROC (China); Chang, Chia-Chin [Department of Greenergy, National University of Tainan, Tainan 70005, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70001, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan, ROC (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, ROC (China)

    2017-08-15

    Highlights: • Facile, one-pot, low temperature synthesis of SnO{sub 2}-RGO composite. • In-situ reduction of graphene oxide and growth of SnO{sub 2} nanoparticle. • Concentration of reductant during synthesis affects the properties significantly. • SnO{sub 2}-RGO composite shows good rate capability and stable capacitance. • Synthesis method is energy efficient and scalable for other metal oxides. - Abstract: We demonstrate a facile, single step, low temperature and energy efficient strategy for the synthesis of SnO{sub 2}-reduced graphene oxide (RGO) nanocomposite where the crystallization of SnO{sub 2} nanoparticles and the reduction of graphene oxide takes place simultaneously by an in situ chemical reduction process. The electrochemical property of the SnO{sub 2}-RGO composite prepared by using low concentrations of reducing agent shows better Li storage performance, good rate capability (378 mAh g{sup −1} at 3200 mA g{sup −1}) and stable capacitance (522 mAh g{sup −1} after 50 cycles). Increasing the reductant concentration lead to crystallization of high concentration of SnO{sub 2} nanoparticle aggregation and degrade the Li ion storage property.

  5. Investigations of impurity control in JET using fuelling, and interpretation of experiments using the LIM impurity code

    International Nuclear Information System (INIS)

    Gondhalekar, A.; Stangeby, P.C.; Elder, J.D.

    1994-01-01

    Inhibition of contamination of the plasma core in JET by edge impurities during high power heating of deuterium plasmas in limiter configuration using fuelling is demonstrated. By injecting deuterium gas during heating, in the presence of a much larger recycling deuterium flux, a reduction of more than a factor of 2 was effected in n z (0)/Φ z , the ratio of central impurity density to impurity influx at the plasma edge. The reduction in n z (0) was obtained without much effect on peak electron temperature and density. Reduction of plasma contamination by gas fuelling was observed also when hot spots formed on the limiter, a condition that without simultaneous gas fuelling culminated in runaway plasma contamination. Detailed analysis of the experiments is undertaken with the purpose of identifying the processes by which plasma contamination was inhibited, employing standard limiter plasma contamination modelling. Processes which might produce the observed impurity inhibiting effects of gas injection include: (a) reduction in impurity production at the limiter; (b) increase in impurity screening in the scrape-off layer; (c) increase in radial impurity transport at the plasma edge; (d) increase in average deuteron flow velocity to the limiter along the scrape-off layer. These are examined in detail using the Monte Carlo limiter impurity transport code LIM. Bearing in mind that uncertainties exist both in the choice of appropriate modelling assumptions to be used and in the measurement of required edge plasma parameters, changes in n z (0)/Φ z by a factor of 2 are at the limit of the present modelling capability. However, comparison between LIM code simulations and measurements of plasma impurity content indicate that the standard limiter plasma contamination model may not be adequate and that other processes need to be added in order to be able to describe the experiments in JET. (author). 24 refs, 2 figs, 8 tabs

  6. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  7. Oxidation of Pb-Sn and Pb-Sn-In alloys

    International Nuclear Information System (INIS)

    Sluzewski, D.A.; Chang, Y.A.; Marcotte, V.C.

    1990-01-01

    Air oxidized Pb-Sn and Pb-Sn-In single phase alloys have been studied with scanning Auger microscopy. Line scans across grain boundaries combined with argon ion sputter etching revealed grain boundary oxidation. In the Pb-Sn samples, tin is preferentially oxidized with the grain boundary regions having a much higher percentage of tin oxide than the bulk surface oxide. In the Pb-Sn-In alloys, both tin and indium are preferentially oxidized with the grain boundary regions being enriched with tin and indium oxides

  8. The effect of iron and copper impurities on the wettability of sphalerite (110) surface.

    Science.gov (United States)

    Simpson, Darren J; Bredow, Thomas; Chandra, Anand P; Cavallaro, Giuseppe P; Gerson, Andrea R

    2011-07-15

    The effect of impurities in the zinc sulfide mineral sphalerite on surface wettability has been investigated theoretically to shed light on previously reported conflicting results on sphalerite flotation. The effect of iron and copper impurities on the sphalerite (110) surface energy and on the water adsorption energy was calculated with the semi-empirical method modified symmetrically orthogonalized intermediate neglect of differential overlap (MSINDO) using the cyclic cluster model. The effect of impurities or dopants on surface energies is small but significant. The surface energy increases with increasing surface iron concentration while the opposite effect is reported for increasing copper concentration. The effect on adsorption energies is much more pronounced with water clearly preferring to adsorb on an iron site followed by a zinc site, and copper site least favorable. The theoretical results indicate that a sphalerite (110) surface containing iron is more hydrophilic than the undoped zinc sulfide surface. In agreement with the literature, the surface containing copper (either naturally or by activation) is more hydrophobic than the undoped surface. Copyright © 2011 Wiley Periodicals, Inc.

  9. Impurities and evaluation of induced activity of CVI SiCf/SiC composites

    International Nuclear Information System (INIS)

    Noda, Tetsuji; Fujita, Mitsutane; Araki, Hiroshi; Kohyama, Akira

    2000-01-01

    Impurity of SiC f /SiC composites prepared by CVI was analyzed by neutron activation analysis and glow discharge mass spectrometry. The evaluation of the induced activity of the composites based on the chemical compositions was made using a simulation calculation for fusion reactor blanket. Impurities of 35 elements were detected in the composites. However, the total concentration of metallic impurities was below 20 mass ppm. The analyses of induced activity of the composites show that the dose rate decreases by about six orders of magnitude in a day after the shutdown. It is recommended that the purification of SiC composites, especially reduction of Fe and Ni contents, is necessary to reduce the activity to satisfy the limit of remote handling recycling after several 10 years cooling of fusion reactors

  10. Determination of elemental impurities and U and O isotopic compositions with a view to identify the geographical and industrial origins of uranium ore concentrates

    Science.gov (United States)

    Salaun, A.; Hubert, A.; Pointurier, F.; Aupiais, J.; Pili, E.; Richon, P.; Fauré, A.; Diallo, S.

    2012-12-01

    First events of illicit trafficking of nuclear and radiological materials occurred 50 years ago. Nuclear forensics expertise are aiming at determining the use of seized material, its industrial history and provenance (geographical area, place of production or processing), at assisting in the identification and dismantling of illicit trafficking networks. This information is also valuable in the context of inspections of declared facilities to verify the consistency of operator's declaration. Several characteristics can be used to determine the origin of uranium ore concentrates such as trace elemental impurity patterns (Keegan et al., 2008 ; Varga et al., 2010a, 2010b) or uranium, oxygen and lead isotopic compositions (Tamborini et al., 2002a, 2002b ; Wallenius et al., 2006; Varga et al., 2009). We developed analytical procedures for measuring the isotopic compositions of uranium (234U/238U and 235U/238U) and oxygen (18O/16O) and levels of elemental impurities (e.g. REE, Th) from very small amounts of uranium ore concentrates (or yellow cakes). Micrometer particles and few milligrams of material are used for oxygen isotope measurements and REE determination, respectively. Reference materials were analyzed by mass spectrometry (TIMS, SF-ICP-MS and SIMS) to validate testing protocols. Finally, materials of unknown origin were analyzed to highlight significant differences and determine whether these differences allow identifying the origin of these ore concentrates. References: Keegan, E., et al. (2008). Applied Geochemistry 23, 765-777. Tamborini, G., et al. (2002a). Analytical Chemistry 74, 6098-6101. Tamborini, G., et al. (2002b). Microchimica Acta 139, 185-188. Varga, Z., et al. (2009). Analytical Chemistry 81, 8327-8334. Varga, Z., et al. (2010a). Talanta 80, 1744-1749. Varga, Z., et al. (2010b). Radiochimica Acta 98, 771-778 Wallenius, M., et al. (2006). Forensic Science International 156, 55-62.

  11. Analyses of the Sn IX-Sn XII spectra in the EUV region

    International Nuclear Information System (INIS)

    Churilov, S S; Ryabtsev, A N

    2006-01-01

    The Sn IX-Sn XII spectra excited in a vacuum spark have been analysed in the 130-160 A wavelength region. The analysis was based on the energy parameter extrapolation in the isonuclear Sn VI-VIII and Sn XIII-XIV sequence. 266 spectral lines belonging to the 4d m -(4d m-1 4f+4p 5 4d m+1 ) (m=6-3) transition arrays were classified in the Sn IX-Sn XII spectra for the first time. All 18 level energies of the 4d 3 configuration and 39 level energies of the strongly interacting 4d 2 4f and 4p 5 4d 4 configurations were established in the Sn XII spectrum. The energy differences between the majority of the 4d m levels and about 40 levels of the 4d m-1 4f+4p 5 4d m+1 configurations were determined in each of the Sn IX, Sn X and Sn XI spectra (m=6-4). As a result, all intense lines were classified in the 130-140 A region relevant to the extreme ultraviolet (EUV) lithography. It was shown that the most of the intense lines in the 2% bandwidth at 135 A belong to the transitions in the Sn XI-Sn XIII spectra

  12. Rod-like hierarchical Sn/SnOx@C nanostructures with enhanced lithium storage properties

    Science.gov (United States)

    Yang, Juan; Chen, Sanmei; Tang, Jingjing; Tian, Hangyu; Bai, Tao; Zhou, Xiangyang

    2018-03-01

    Rod-like hierarchical Sn/SnOx@C nanostructures have been designed and synthesized via calcining resorcinol-formaldehyde (RF) resin coated Sn-based metal-organic frameworks. The rod-like hierarchical Sn/SnOx@C nanostructures are made of a great number of carbon-wrapped primary Sn/SnOx nanospheres of 100-200 nm in diameter. The as-prepared hierarchical Sn/SnOx@C nanocomposite manifests a high initial reversible capacity of 1177 mAh g-1 and remains 1001 mAh g-1 after 240 cycles at a current density of 200 mA g-1. It delivers outstanding high-rate performance with a reversible capacity of 823 mAh g-1 even at a high current density of 1000 mA g-1. The enhanced electrochemical performances of the Sn/SnOx@C electrode are mainly attributed to the synergistic effect of the unique hierarchical micro/nanostructures and the protective carbon layer.

  13. Chemical modifications and stability of phosphorene with impurities: a first principles study.

    Science.gov (United States)

    Boukhvalov, D W; Rudenko, A N; Prishchenko, D A; Mazurenko, V G; Katsnelson, M I

    2015-06-21

    We perform a systematic first-principles study of phosphorene in the presence of typical monovalent (hydrogen and fluorine) and divalent (oxygen) impurities. The results of our modeling suggest a decomposition of phosphorene into weakly bonded one-dimensional (1D) chains upon single- and double-side hydrogenation and fluorination. In spite of a sizable quasiparticle band gap (2.29 eV), fully hydrogenated phosphorene was found to be dynamically unstable. In contrast, complete fluorination of phosphorene gives rise to a stable structure, which is an indirect gap semiconductor with a band gap of 2.27 eV. We also show that fluorination of phosphorene from the gas phase is significantly more likely than hydrogenation due to the relatively low energy barrier for the dissociative adsorption of F2 (0.19 eV) compared to H2 (2.54 eV). At low concentrations, monovalent impurities tend to form regular atomic rows of phosphorene, though such patterns do not seem to be easily achievable due to high migration barriers (1.09 and 2.81 eV for H2 and F2, respectively). Oxidation of phosphorene is shown to be a qualitatively different process. Particularly, we observe instability of phosphorene upon oxidation, leading to the formation of disordered amorphous-like structures at high concentrations of impurities.

  14. Decay properties of nuclei in the neighbourhood of 100Sn

    International Nuclear Information System (INIS)

    Straub, Katrin

    2011-01-01

    This thesis concentrates on nuclear properties of very neutron deficient nuclei near the proton dripline in the neighbourhood of doubly-magic 100 Sn. In an experiment performed in March 2008 at the GSI in Darmstadt, the exotic nuclei were produced in a projectile fragmentation reaction using a 124 Xe primary beam with an energy of 100 AMeV impinging on a 4000 Beryllium target, separated and identified in the FRS and eventually stopped for decay spectroscopy in a complex implantation detector developed at the institute E12. The Germanium array RISING was employed for the measurement of prompt and delayed gamma radiation. Production cross sections and half lives were determined along the proton dripline. The isotopes 99 Sn, 97 In and 95 Cd were identified for the first time. additional nuclei studied in this thesis are 103 Sn, 96 Cd as well as the two tin isotopes 101 Sn and 102 Sn. (orig.)

  15. Thermal engineering of lead-free nanostructured CH3NH3SnCl3 perovskite material for thin-film solar cell

    Science.gov (United States)

    Moyez, Sk Abdul; Roy, Subhasis

    2018-01-01

    Perovskite solar cell is a kind of revolutionary investigation in the field of renewable energy which is capable of mitigates the deficiencies of silicon solar cell and its uprising efficiency can bring blessing to society. The presence of lead (Pb) in perovskite solar cell can make worst and negative impact on environment and is not desirable for our society. In this paper, general plans are anticipated by replacement of Pb with tin (Sn) in open atmosphere to fabricate the CH3NH3SnCl3 photovoltaic cells in chlorine (Cl)-rich environment. Excess uses of Cl has positive influences on morphological growth of the film and it also suppresses the oxidation tendency of tin (Sn) with existing oxygen in atmosphere and maintains same chemical atmosphere as bulk. Various characterization tools like X-ray diffraction, scanning electron microscope (SEM) have been used to study the effect of annealing temperature on crystal stricture, phase formation, impurities, and morphologies of the film. Finally, photovoltaic performance was reported using the solar simulator under 1.5 sun illumination.

  16. Influence of impurities on silicide contact formation

    International Nuclear Information System (INIS)

    Kazdaev, Kh.R.; Meermanov, G.B.; Kazdaev, R.Kh.

    2002-01-01

    Research objectives of this work are to investigate the influence of light impurities implantation on peculiarities of the silicides formation in molybdenum monocrystal implanted by silicon, and in molybdenum films sputtered on silicon substrate at subsequent annealing. Implantation of the molybdenum samples was performed with silicon ions (90 keV, 5x10 17 cm -2 ). Phase identification was performed by X ray analysis with photographic method of registration. Analysis of the results has shown the formation of the molybdenum silicide Mo 3 Si at 900 deg. C. To find out the influence of impurities present in the atmosphere (C,N,O) on investigated processes we have applied combined implantation. At first, molybdenum was implanted with ions of the basic component (silicon) and then -- with impurities ions. Acceleration energies (40keV for C, 45 keV for N and 50 keV for O) were chosen to obtain the same distribution profiles for basic and impurities ions. Ion doses were 5x10 17 cm -2 for Si-ions and 5x10 16 cm -2 - for impurities. The most important results are reported here. The first, for all three kinds of impurities the decreased formation temperatures of the phase Mo 3 Si were observed; in the case of C and N it was ∼100 deg. and in the case of nitrogen - ∼200 deg. Further, simultaneously with the Mo 3 Si phase, the appearance of the rich-metal phase Mo 5 Si 3 was registered (not observed in the samples without additional implantation). In case of Mo/Si-structure, the implantation of the impurities (N,O) was performed to create the peak concentration (∼4at/%) located in the middle of the molybdenum film (∼ 150nm) deposited on silicon substrate. Investigation carried out on unimplanted samples showed the formation of the silicide molybdenum MoSi 2 , observed after annealing at temperatures 900/1000 deg. C, higher than values 500-600 deg. C reported in other works. It is discovered that electrical conductivity of Mo 5 Si 3 -films synthesized after impurities

  17. Evaluation of hydrogen and oxygen impurity levels on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kenny, M.J.; Wielunski, L.S.; Netterfield, R.P.; Martin, P.J.; Leistner, A. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics

    1996-12-31

    This paper reports on surface analytical techniques used to quantify surface concentrations of impurities such as oxygen and hydrogen. The following analytical techniques were used: Rutherford and Backscattering, elastic recoil detection, time-of-flight SIMS, spectroscopic ellipsometry, x-ray photoelectron spectroscopy. The results have shown a spread in thickness of oxide layer, ranging from unmeasurable to 1.6 nm. The data must be considered as preliminary at this stage, but give some insight into the suitability of the techniques and a general idea of the significance of impurities at the monolayer level. These measurements have been carried out on a small number of silicon surfaces both semiconductor grade <111> crystalline material and silicon which has been used in sphere fabrication. 5 refs., 1 fig.

  18. Evaluation of hydrogen and oxygen impurity levels on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kenny, M J; Wielunski, L S; Netterfield, R P; Martin, P J; Leistner, A [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics

    1997-12-31

    This paper reports on surface analytical techniques used to quantify surface concentrations of impurities such as oxygen and hydrogen. The following analytical techniques were used: Rutherford and Backscattering, elastic recoil detection, time-of-flight SIMS, spectroscopic ellipsometry, x-ray photoelectron spectroscopy. The results have shown a spread in thickness of oxide layer, ranging from unmeasurable to 1.6 nm. The data must be considered as preliminary at this stage, but give some insight into the suitability of the techniques and a general idea of the significance of impurities at the monolayer level. These measurements have been carried out on a small number of silicon surfaces both semiconductor grade <111> crystalline material and silicon which has been used in sphere fabrication. 5 refs., 1 fig.

  19. Isotope effects of trapped electron modes in the presence of impurities in tokamak plasmas

    Science.gov (United States)

    Shen, Yong; Dong, J. Q.; Sun, A. P.; Qu, H. P.; Lu, G. M.; He, Z. X.; He, H. D.; Wang, L. F.

    2016-04-01

    The trapped electron modes (TEMs) are numerically investigated in toroidal magnetized hydrogen, deuterium and tritium plasmas, taking into account the effects of impurity ions such as carbon, oxygen, helium, tungsten and others with positive and negative density gradients with the rigorous integral eigenmode equation. The effects of impurity ions on TEMs are investigated in detail. It is shown that impurity ions have substantially-destabilizing (stabilizing) effects on TEMs in isotope plasmas for {{L}ez}\\equiv {{L}ne}/{{L}nz}>0 (TEM turbulences in hydrogenic isotope plasmas with and without impurities are performed. The relations between the maximum growth rate of the TEMs with respect to the poloidal wave number and the ion mass number are given in the presence of the impurity ions. The results demonstrate that the maximum growth rates scale as {γ\\max}\\propto Mi-0.5 in pure hydrogenic plasmas. The scale depends on the sign of its density gradient and charge number when there is a second species of (impurity) ions. When impurity ions have density profiles peaking inwardly (i.e. {{L}ez}\\equiv {{L}ne}/{{L}nz}>0 ), the scaling also depends on ITG parameter {ηi} . The maximum growth rates scale as {γ\\max}\\propto M\\text{eff}-0.5 for the case without ITG ({ηi}=0 ) or the ITG parameter is positive ({ηi}>0 ) but the impurity ion charge number is low (Z≤slant 5.0 ). However, when {ηi}>0 and the impurity ion charge number is moderate (Z=6.0-8.0 ), the scaling law is found as {γ\\max}\\propto M\\text{eff}-1.0 . Here, Z is impurity ion charge number, and the effective mass number, {{M}\\text{eff}}=≤ft(1-{{f}z}\\right){{M}i}+{{f}z}{{M}z} , with {{M}i} and {{M}Z} being the mass numbers of the hydrogenic and impurity ions, respectively, and {{f}z}=Z{{n}0z}/{{n}0e} being the charge concentration of impurity ions. In addition, with regard to the case of {{L}ez}<0 , the maximum growth rate scaling is {γ\\max}\\propto Mi-0.5 . The possible relations of the results

  20. Predictions of the impurities in the CO2 stream of an oxy-coal combustion plant

    International Nuclear Information System (INIS)

    Liu, Hao; Shao, Yingjuan

    2010-01-01

    Whilst all three main carbon capture technologies (post-combustion, pre-combustion and oxy-fuel combustion) can produce a CO 2 dominant stream, other impurities are expected to be present in the CO 2 stream. The impurities in the CO 2 stream can adversely affect other processes of the carbon capture and storage (CCS) chain including the purification, compression, transportation and storage of the CO 2 stream. Both the nature and the concentrations of potential impurities expected to be present in the CO 2 stream of a CCS-integrated power plant depend on not only the type of the power plant but also the carbon capture method used. The present paper focuses on the predictions of impurities expected to be present in the CO 2 stream of an oxy-coal combustion plant. The main gaseous impurities of the CO 2 stream of oxy-coal combustion are N 2 /Ar, O 2 and H 2 O. Even the air ingress to the boiler and its auxiliaries is small enough to be neglected, the N 2 /Ar concentration of the CO 2 stream can vary between ca. 1% and 6%, mainly depending on the O 2 purity of the air separation unit, and the O 2 concentration can vary between ca. 3% and 5%, mainly depending on the combustion stoichiometry of the boiler. The H 2 O concentration of the CO 2 stream can vary from ca. 10% to over 40%, mainly depending on the fuel moisture and the partitioning of recycling flue gas (RFG) between wet-RFG and dry-RFG. NO x and SO 2 are the two main polluting impurities of the CO 2 stream of an oxy-coal combustion plant and their concentrations are expected to be well above those found in the flue gas of an air-coal combustion plant. The concentration of NO x in the flue gas of an oxy-coal combustion plant can be up to ca. two times to that of an equivalent air-coal combustion plant. The amount of NO x emitted by the oxy-coal combustion plant, however, is expected to be much smaller than that of the air-coal combustion plant. The reductions of the recirculated NO x within the combustion

  1. Reduction of secondary phases in Cu{sub 2}SnSe{sub 3} absorbers for solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zeguo, E-mail: tangzg@fc.ritsumei.ac.jp [Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, Shiga (Japan); Nukui, Yuki; Kosaka, Kiichi; Ashida, Naoki; Uegaki, Hikaru; Minemoto, Takashi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan)

    2014-09-01

    Highlights: • Cu{sub 2}SnSe{sub 3} thin films for absorber of solar cell are fabricated by selenization of Cu–Sn precursors. • Secondary phase of Cu{sub 2–x}Se can be suppressed via using Se and SnSe mixture powders as Se source. • Selective etching of secondary phase of Cu{sub 2–x}Se is realized by potassium cyanide solution. • Cu{sub 2–x}Se rather than SnSe makes major contribution to the high carrier concentration of CTSe films. - Abstract: The creation of secondary phases, such as Cu{sub 2−x}Se and SnSe, and their influence on electrical properties of Cu{sub 2}SnSe{sub 3} (CTSe) thin films fabricated by selenization of Cu–Sn metal precursors are investigated. The Cu{sub 2−x}Se content in CTSe films is estimated via deconvolution of grazing incidence X-ray diffraction (GIXRD) patterns, and the results suggest that the Cu{sub 2−x}Se content increases with the increasing Cu/Sn ratio in metal precursors. We also found that using Se and SnSe mixture powders as Se source is an effective approach to suppress the creation of Cu{sub 2−x}Se secondary phase. Meanwhile, selective etching of Cu{sub 2−x}Se is realized by potassium cyanide (KCN) solution. Hall measurement results reveal that the secondary phase of Cu{sub 2−x}Se rather than SnSe makes major contribution to the high carrier concentration (larger than 10{sup 18} cm{sup −3}) of CTSe films. The approach to further decrease the carrier concentration in CTSe films is discussed.

  2. Impurity energy level in the Haldane gap

    International Nuclear Information System (INIS)

    Wang Wei; Lu Yu

    1995-11-01

    An impurity bond J' in a periodic 1D antiferromagnetic spin 1 chain with exchange J is considered. Using the numerical density matrix renormalization group method, we find an impurity energy level in the Haldane gap, corresponding to a bound state near the impurity bond. When J' J. The impurity level appears only when the deviation dev = (J'- J)/J' is greater than B c , which is close to 0.3 in our calculation. (author). 15 refs, 4 figs

  3. Formation of hydrothermal tin deposits: Raman spectroscopic evidence for an important role of aqueous Sn(IV) species

    Science.gov (United States)

    Schmidt, Christian

    2018-01-01

    The speciation of tin and the solubility of cassiterite in H2O + HCl were determined at temperatures to 600 °C using in situ Raman spectroscopy. In addition, information on the fluid-melt partition of Sn was obtained at 700 °C and indicated a preference of the fluid only at HCl concentrations that are much higher than in fluids exsolved from natural felsic melts. Dissolution of cassiterite generally resulted in formation of Sn(IV) species unless reduced conditions were generated by hydrogen permeation or carbohydrates in the starting material. The prevalent aqueous Sn(IV) species was [SnCl4(H2O)2]0, with additional [SnCl3(H2O)3]+ and [SnCl5(H2O)]-. The only detectable Sn(II) species was very likely [Sn(II)Cl3]-. Cassiterite solubility increased with HCl concentration and was generally high in H2O+HCl fluids, with no strong dependencies on temperature, pressure, or the oxidation state of tin in the fluid. The Sn(IV) concentrations at 500 and 600 °C determined from the integrated ν1[Sn(IV)sbnd Cl] band intensity are in good agreement with literature data on the cassiterite solubility in H2O + HCl at oxygen fugacities along the hematite-magnetite buffer. The combined results from previous experimental studies and this study demonstrate that HCl molality is a crucial parameter for hydrothermal mobilization and transport of tin and for cassiterite precipitation, and that pH, pressure and temperature are less important. Current models on hydrothermal tin deposit formation need to be augmented to include Sn(IV)sbnd Cl complexes as significant tin-transporting species. Irrespective of the oxidation state of tin in the fluid, cassiterite precipitates due to reaction of the hydrothermal fluid with the wall rock (greisen or skarn formation), dilution (mixing with meteoric water) or a decrease in the HCl activity in the aqueous liquid by boiling. A redox reaction is only required for tin transported as Sn(II) to be converted to Sn(IV).

  4. Multi-impurity polarons in a dilute Bose-Einstein condensate

    International Nuclear Information System (INIS)

    Santamore, D H; Timmermans, Eddy

    2011-01-01

    We describe the ground state of a large, dilute, neutral atom Bose-Einstein condensate (BEC) doped with N strongly coupled mutually indistinguishable, bosonic neutral atoms (referred to as ‘impurity’) in the polaron regime where the BEC density response to the impurity atoms remains significantly smaller than the average density of the surrounding BEC. We find that N impurity atoms with N ≠ 1 can self-localize at a lower value of the impurity-boson interaction strength than a single impurity atom. When the ‘bare’ short-range impurity-impurity repulsion does not play a significant role, the self-localization of multiple bosonic impurity atoms into the same single particle orbital (which we call co-self-localization) is the nucleation process of the phase separation transition. When the short-range impurity-impurity repulsion successfully competes with co-self-localization, the system may form a stable liquid of self-localized single impurity polarons. (paper)

  5. Collision of impurities with Bose–Einstein condensates

    Science.gov (United States)

    Lingua, F.; Lepori, L.; Minardi, F.; Penna, V.; Salasnich, L.

    2018-04-01

    Quantum dynamics of impurities in a bath of bosons is a long-standing problem in solid-state, plasma, and atomic physics. Recent experimental and theoretical investigations with ultracold atoms have focused on this problem, studying atomic impurities immersed in an atomic Bose–Einstein condensate (BEC) and for various relative coupling strengths tuned by the Fano‑Feshbach resonance technique. Here, we report extensive numerical simulations on a closely related problem: the collision between a bosonic impurity consisting of a few 41K atoms and a BEC of 87Rb atoms in a quasi one-dimensional configuration and under a weak harmonic axial confinement. For small values of the inter-species interaction strength (regardless of its sign), we find that the impurity, which starts from outside the BEC, simply causes the BEC cloud to oscillate back and forth, but the frequency of oscillation depends on the interaction strength. For intermediate couplings, after a few cycles of oscillation the impurity is captured by the BEC, and strongly changes its amplitude of oscillation. In the strong interaction regime, if the inter-species interaction is attractive, a local maximum (bright soliton) in the BEC density occurs where the impurity is trapped; if, instead, the inter-species interaction is repulsive, the impurity is not able to enter the BEC cloud and the reflection coefficient is close to one. However, if the initial displacement of the impurity is increased, the impurity is able to penetrate the cloud, leading to the appearance of a moving hole (dark soliton) in the BEC.

  6. Synthesis, characterization and photocatalytic performance of SnS nanofibers and SnSe nanofibers derived from the electrospinning-made SnO{sub 2} nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Li; Li, Dan; Dong, Xiangting; Ma, Qianli; Yu, Wensheng; Wang, Xinlu; Yu, Hui; Wang, Jinxian; Liu, Guixia, E-mail: dongxiangting888@163.com [Key Laboratory of Applied Chemistry and Nanotechnology at Universities of Jilin Province, Changchun University of Science and Technology, Changchun (China)

    2017-11-15

    SnO{sub 2} nanofibers were fabricated by calcination of the electrospun PVP/SnCl{sub 4} composite nanofibers. For the first time, SnS nanofibers and SnSe nanofibers were successfully synthesized by double crucible sulfurization and selenidation methods via inheriting the morphology of SnO{sub 2} nanofibers used as precursors, respectively. X-ray diffraction (XRD) analysis shows SnS nanofibers and SnSe nanofibers are respectively pure orthorhombic phase with space group of Pbnm and Cmcm. Scanning electron microscope (SEM) observation indicates that the diameters of SnS nanofibers and SnSe nanofibers are respectively 140.54±12.80 nm and 96.52±14.17 nm under the 95 % confidence level. The photocatalytic activities of samples were studied by using rhodamine B (Rh B) as degradation agent. When SnS or SnSe nanofibers are employed as the photocatalysts, the respective degradation rates of Rh B solution under the ultraviolet light irradiation after 200 min irradiation are 92.55 % and 92.86 %. The photocatalytic mechanism and formation process of SnS and SnSe nanofibers are also provided. More importantly, this preparation technique is of universal significance to prepare other metal chalcogenides nanofibers. (author)

  7. Effects of Sn doping on the morphology, structure, and electrical property of In{sub 2}O{sub 3} nanofiber networks

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xu; Wang, Yihua [Zhejiang Sci-Tech University, College of Materials and Textiles, Hangzhou (China); Yang, Bin [Zhejiang Sci-Tech University, Ministry of Education, Key Laboratory of Advanced Textile Materials and Manufacturing Technology, College of Materials and Textiles, Hangzhou (China); Zhejiang Sci-Tech University, College of Materials and Textiles, Hangzhou (China)

    2014-11-15

    This paper studies the effect of Sn doping on the morphological, structural, and electrical properties of the Sn-doping In{sub 2}O{sub 3} nanofiber networks. In{sub 2}O{sub 3}-based nanofibers with various relative concentration of Sn precursor (0-20 mol%) were fabricated through the electrospinning method. Scanning electron microscopy observations show that, depending on the relative concentration of SnCl{sub 4} in the starting materials, the doped nanofibers with different morphologies, from smooth to corn-like and then to accidented, are fabricated. Transmission electron microscopy and X-ray diffraction analyses reveal that the Sn dopants influence the growth direction of seeds, resulting in doped nanoparticles having diverse shapes and sizes, which are critical for the formation of doped nanofiber with different morphology. From these nanofiber networks, we fabricated several thin sheets to characterize the effect of Sn concentration on the electrical resistivity. The resistivity of thin sheets decreased significantly before the doping concentration up to 12.5 mol%, and then increased slightly at a larger addition. This work will assist further understanding the formation of Sn-doped In{sub 2}O{sub 3} nanofibers and is expected to be extended to other transparent conductive oxides. (orig.)

  8. Determination of Impurities of Atrazine by HPLP-MS

    Energy Technology Data Exchange (ETDEWEB)

    Canping, Pan [Department of Applied Chemistry, China Agricultural University Beijing (China)

    2009-07-15

    The determination of the main impurities of the herbicide atrazine by GC/FID, GC/MS and LC/MS is described. The most relevant technical impurities were synthesized and characterized by IR and UV spectroscopy as well. The impurity profiles of different technical grade formulated products were tested and the typical impurities identified. (author)

  9. The influence of impurities on the recovery of radiation defects in niobium

    International Nuclear Information System (INIS)

    Petzold, J.

    1986-01-01

    Pure niobium and doped niobium are irradiated with electrons (3 MeV) at a temperature of 7-8 K. During annealing the influence of the different impurities and of their doping concentration on the recovery of the electric conductivity are investigated. (BHO)

  10. Influence of iron impurities on defected graphene

    Energy Technology Data Exchange (ETDEWEB)

    Faccio, Ricardo; Pardo, Helena [Centro NanoMat, Cryssmat-Lab, DETEMA, Polo Tecnológico de Pando, Facultad de Química, Universidad de la República, Cno. Saravia s/n, CP 91000 Pando (Uruguay); Centro Interdisciplinario en Nanotecnología, Química y Física de Materiales, Espacio Interdisciplinario, Universidad de la República, Montevideo (Uruguay); Araújo-Moreira, Fernando M. [Materials and Devices Group, Department of Physics, Universidade Federal de São Carlos, SP 13565-905 (Brazil); Mombrú, Alvaro W., E-mail: amombru@fq.edu.uy [Centro NanoMat, Cryssmat-Lab, DETEMA, Polo Tecnológico de Pando, Facultad de Química, Universidad de la República, Cno. Saravia s/n, CP 91000 Pando (Uruguay); Centro Interdisciplinario en Nanotecnología, Química y Física de Materiales, Espacio Interdisciplinario, Universidad de la República, Montevideo (Uruguay)

    2015-03-01

    Highlights: • The interaction among a multivacancy graphene system and iron impurities is studied. • The studied iron impurities were single atom and tetrahedral and octahedral clusters. • DFT calculations using the VASP code were performed. • The embedding of Fe affects the structure and electronic behavior in the graphene. • Half metal or semimetal behavior can be obtained, depending on the Fe impurities. - Abstract: The aim of this work is to study the interaction of selected iron cluster impurities and a multivacancy graphene system, in terms of the structural distortion that the impurities cause as well as their magnetic response. While originally, the interaction has been limited to vacancies and isolated metallic atoms, in this case, we consider small iron clusters. This study was undertaken using Density Functional Theory (DFT) calculations. The influence of the iron impurities in the electronic structure of the vacant graphene system is discussed. The main conclusion of this work is that the presence of iron impurities acts lowering the magnetic signal due to the occurrence of spin pairing between carbon and iron, instead of enhancing the possible intrinsic carbon magnetism.

  11. Influence of iron impurities on defected graphene

    International Nuclear Information System (INIS)

    Faccio, Ricardo; Pardo, Helena; Araújo-Moreira, Fernando M.; Mombrú, Alvaro W.

    2015-01-01

    Highlights: • The interaction among a multivacancy graphene system and iron impurities is studied. • The studied iron impurities were single atom and tetrahedral and octahedral clusters. • DFT calculations using the VASP code were performed. • The embedding of Fe affects the structure and electronic behavior in the graphene. • Half metal or semimetal behavior can be obtained, depending on the Fe impurities. - Abstract: The aim of this work is to study the interaction of selected iron cluster impurities and a multivacancy graphene system, in terms of the structural distortion that the impurities cause as well as their magnetic response. While originally, the interaction has been limited to vacancies and isolated metallic atoms, in this case, we consider small iron clusters. This study was undertaken using Density Functional Theory (DFT) calculations. The influence of the iron impurities in the electronic structure of the vacant graphene system is discussed. The main conclusion of this work is that the presence of iron impurities acts lowering the magnetic signal due to the occurrence of spin pairing between carbon and iron, instead of enhancing the possible intrinsic carbon magnetism

  12. Impurity bubbles in a BEC

    Science.gov (United States)

    Timmermans, Eddy; Blinova, Alina; Boshier, Malcolm

    2013-05-01

    Polarons (particles that interact with the self-consistent deformation of the host medium that contains them) self-localize when strongly coupled. Dilute Bose-Einstein condensates (BECs) doped with neutral distinguishable atoms (impurities) and armed with a Feshbach-tuned impurity-boson interaction provide a unique laboratory to study self-localized polarons. In nature, self-localized polarons come in two flavors that exhibit qualitatively different behavior: In lattice systems, the deformation is slight and the particle is accompanied by a cloud of collective excitations as in the case of the Landau-Pekar polarons of electrons in a dielectric lattice. In natural fluids and gases, the strongly coupled particle radically alters the medium, e.g. by expelling the host medium as in the case of the electron bubbles in superfluid helium. We show that BEC-impurities can self-localize in a bubble, as well as in a Landau-Pekar polaron state. The BEC-impurity system is fully characterized by only two dimensionless coupling constants. In the corresponding phase diagram the bubble and Landau-Pekar polaron limits correspond to large islands separated by a cross-over region. The same BEC-impurity species can be adiabatically Feshbach steered from the Landau-Pekar to the bubble regime. This work was funded by the Los Alamos LDRD program.

  13. Impurity bound states in mesoscopic topological superconducting loops

    Science.gov (United States)

    Jin, Yan-Yan; Zha, Guo-Qiao; Zhou, Shi-Ping

    2018-06-01

    We study numerically the effect induced by magnetic impurities in topological s-wave superconducting loops with spin-orbit interaction based on spin-generalized Bogoliubov-de Gennes equations. In the case of a single magnetic impurity, it is found that the midgap bound states can cross the Fermi level at an appropriate impurity strength and the circulating spin current jumps at the crossing point. The evolution of the zero-energy mode can be effectively tuned by the located site of a single magnetic impurity. For the effect of many magnetic impurities, two independent midway or edge impurities cannot lead to the overlap of zero modes. The multiple zero-energy modes can be effectively realized by embedding a single Josephson junction with impurity scattering into the system, and the spin current displays oscillatory feature with increasing the layer thickness.

  14. Impurity seeding in ASDEX upgrade tokamak modeled by COREDIV code

    Energy Technology Data Exchange (ETDEWEB)

    Galazka, K.; Ivanova-Stanik, I.; Czarnecka, A.; Zagoerski, R. [Institute of Plasma Physics and Laser Microfusion, Warsaw (Poland); Bernert, M.; Kallenbach, A. [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany); Collaboration: ASDEX Upgrade Team

    2016-08-15

    The self-consistent COREDIV code is used to simulate discharges in a tokamak plasma, especially the influence of impurities during nitrogen and argon seeding on the key plasma parameters. The calculations are performed with and without taking into account the W prompt redeposition in the divertor area and are compared to the experimental results acquired on ASDEX Upgrade tokamak (shots 29254 and 29257). For both impurities the modeling shows a better agreement with the experiment in the case without prompt redeposition. It is attributed to higher average tungsten concentration, which on the other hand seriously exceeds the experimental value. By turning the prompt redeposition process on, the W concentration is lowered, what, in turn, results in underestimation of the radiative power losses. By analyzing the influence of the transport coefficients on the radiative power loss and average W concentration it is concluded that the way to compromise the opposing tendencies is to include the edge-localized mode flushing mechanism into the code, which dominates the experimental particle and energy balance. Also performing the calculations with both anomalous and neoclassical diffusion transport mechanisms included is suggested. (copyright 2016 The Authors. Contributions to Plasma Physics published by Wiley-VCH Verlag GmbH and Co. KGaA Weinheim. This)

  15. Hydrogenic impurity in double quantum dots

    International Nuclear Information System (INIS)

    Wang, X.F.

    2007-01-01

    The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically

  16. Models for impurity effects in tokamaks

    International Nuclear Information System (INIS)

    Hogan, J.T.

    1980-03-01

    Models for impurity effects in tokamaks are described with an emphasis on the relationship between attainment of high β and impurity problems. We briefly describe the status of attempts to employ neutral beam heating to achieve high β in tokamaks and propose a qualitative model for the mechanism by which heavy metal impurities may be produced in the startup phase of the discharge. We then describe paradoxes in impurity diffusion theory and discuss possible resolutions in terms of the effects of large-scale islands and sawtooth oscillations. Finally, we examine the prospects for the Zakharov-Shafranov catastrophe (long time scale disintegration of FCT equilibria) in the context of present and near-term experimental capability

  17. Sn-In-Ag phase equilibria and Sn-In-(Ag)/Ag interfacial reactions

    International Nuclear Information System (INIS)

    Chen Sinnwen; Lee Wanyu; Hsu Chiaming; Yang Chingfeng; Hsu Hsinyun; Wu Hsinjay

    2011-01-01

    Research highlights: → Thermodynamic models of Sn-In and Sn-In-Ag are developed using the CALPHAD approach. → Reaction layer in the Sn-In-(Ag)/Ag couples at 100 deg. C is thinner than those at 25 deg. C, 50 deg. C, and 75 deg. C. → Reactions in the Sn-20 wt%In-2.8 wt%Ag/Ag couples are faster than those in the Sn-20 wt%In/Ag couples. - Abstract: Experimental verifications of the Sn-In and Sn-In-Ag phase equilibria have been conducted. The experimental measurements of phase equilibria and thermodynamic properties are used for thermodynamic modeling by the CALPHAD approach. The calculated results are in good agreement with experimental results. Interfacial reactions in the Sn-In-(Ag)/Ag couples have been examined. Both Ag 2 In and AgIn 2 phases are formed in the Sn-51.0 wt%In/Ag couples reacted at 100 and 150 deg. C, and only the Ag 2 In phase is formed when reacted at 25, 50 and 75 deg. C. Due to the different growth rates of different reaction phases, the reaction layer at 100 deg. C is thinner than those at 25 deg. C, 50 deg. C, and 75 deg. C. In the Sn-20.0 wt%In/Ag couples, the ζ phase is formed at 250 deg. C and ζ/AgIn 2 phases are formed at 125 deg. C. Compared with the Sn-20 wt%In/Ag couples, faster interfacial reactions are observed in the Sn-20.0 wt%In-2.8 wt%Ag/Ag couples, and minor Ag addition to Sn-20 wt%In solder increases the growth rates of the reaction phases.

  18. Magnetic behaviour of cerium in Ce2 Sn5 and Ce3 Sn7, surstructures of Ce Sn3

    International Nuclear Information System (INIS)

    Stunault, A.

    1988-07-01

    The compound studied, Ce 2 Sn 5 and Ce 3 Sn 7 are both orthorhombic, surstructure of cubic Ce Sn 3 . Magnetic susceptibility measurements show in both compounds an antiferromagnetic order at low temperature and magnetization shows a high anisotropy. Magnetization densities are determined by polarized neutron diffraction. The cerium site which has two Ce atoms as nearest neighbourgs carries all the magnetism in both structures. For Ce 2 Sn 5 moments are directed as the high magnetization axis and structure is modulated. Ce 3 Sn 7 presents a simple antiferromagnetic order but moment are directed as low magnetization axis. Various transitions towards a ferromagnetic order are presented. Results are interpreted by measuring the difference between energy levels of crystalline field. A model of crystalline field and isotrope exchange agrees well with Ce 3 Sn 7 , but for Ce 2 Sn 7 it is necessary to reduce the magnetic moment which is typical of the Kondo effect [fr

  19. Peculiarities of component interaction in {l_brace}Gd, Er{r_brace}-V-Sn Ternary systems at 870 K and crystal structure of RV{sub 6}Sn{sub 6} stannides

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, L., E-mail: romakal@franko.lviv.ua [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya str. 6, 79005 Lviv (Ukraine); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya str. 6, 79005 Lviv (Ukraine); Romaka, V.V. [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Demchenko, P.; Stadnyshyn, M.; Konyk, M. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya str. 6, 79005 Lviv (Ukraine)

    2011-09-08

    Highlights: > {l_brace}Gd, Er{r_brace}-V-Sn ternary systems at 870 K are characterized by formation of stannides with general compositions RV{sub 6}Sn{sub 6}. > Isostructural RV{sub 6}Sn{sub 6} compounds were also found with Y, Dy, Ho, Tm, and Lu. > The crystal structure of RV{sub 6}Sn{sub 6} compounds was determined by powder diffraction method. > Structural analysis showed that RV{sub 6}Sn{sub 6} compounds (R = Gd, Dy-Tm, Lu) are disordered; YV{sub 6}Sn{sub 6} is characterized by structure ordering. - Abstract: The phase equilibria in the Gd-V-Sn and Er-V-Sn ternary systems were studied at 870 K by means of X-ray and metallographic analyses in the whole concentration range. Both Gd-V-Sn and Er-V-Sn systems are characterized by formation of one ternary compound at investigated temperature, with stoichiometry RV{sub 6}Sn{sub 6} (SmMn{sub 6}Sn{sub 6}-type, space group P6/mmm, a = 0.55322(3) nm, c = 0.91949(7) nm for Gd, a = 0.55191(2) nm, c = 0.91869(8) nm for Er). Solubility of the third component in the binary compounds was not observed. Compounds with the SmMn{sub 6}Sn{sub 6}-type were also found with Dy, Ho, Tm, and Lu, while YV{sub 6}Sn{sub 6} compound crystallizes in HfFe{sub 6}Ge{sub 6} structure type. All investigated compounds are the first ternary stannides with rare earth elements and vanadium.

  20. SnO2/PPy Screen-Printed Multilayer CO2 Gas Sensor

    Directory of Open Access Journals (Sweden)

    S.A. WAGHULEY

    2007-05-01

    Full Text Available Tin dioxide (SnO2 plays a dominant role in solid state gas sensors and exhibit sensitivity towards oxidizing and reducing gases by a variation of its electrical properties. The electrical conducting polymer-polypyrrole (PPy has high anisotropy of electrical conduction and used as a gas sensor. SnO2/PPy multilayer, pure SnO2, pure PPy sensors were prepared by screen-printing method on Al2O3 layer followed by glass substrate. The sensors were used for different concentration (ppm of CO2 gas investigation at room temperature (303 K. The sensitivity of SnO2/PPy multilayer sensor was found to be higher, compared with pure SnO2 and pure PPy sensors. The multilayer sensor exhibited improved stability. The response and recovery time of multilayer sensor were found to be ~2 min and ~10 min respectively.

  1. Deposition and characterization of single magnetron deposited Fe:SnO{sub x} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Kormunda, Martin, E-mail: martin.kormunda@ujep.cz [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Fischer, Daniel; Hertwig, Andreas; Beck, Uwe [BAM Federal Institute for Materials Research and Testing, Division 6 4 Surface Technologies, Unter den Eichen 44-46, 12203 Berlin (Germany); Sebik, Matej; Pavlik, Jaroslav [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Esser, Norbert [Leibniz-Institut für Analytische Wissenschaften — ISAS e.V., Department Berlin, Schwarzschildstr. 12, 12489 Berlin (Germany)

    2015-11-30

    Coatings deposited by magnetron co-sputtering from a single RF magnetron with a ceramic SnO{sub 2} target with iron inset in argon plasma were studied. The mass spectra of the process identified Sn{sup +} and SnO{sup +} species as the dominant species sputtered from the target, but no SnO{sub 2}{sup +} species were detected. The dominant positive ions in argon plasma are Ar{sup +} species. The only detected negative ions were O{sup −}. Sputtered neutral tin related species were not detected. Iron related species were also not detected because their concentration is below the detection limit. The concentration of iron dopant in the tin oxide coatings was controlled by the RF bias applied on the substrate holder while the discharge pressure also has some influence. The iron concentration was in the range from 0.9 at.% up to 19 at.% increasing with the substrate bias while the sheet resistivity decreases. The stoichiometry ratio of O/(Sn + Fe) in the coatings increased from 1.7 up to 2 in dependence on the substrate bias from floating bias (− 5 V) up to − 120 V of RF self-bias, respectively. The tin in the coatings was mainly bonded in Sn{sup 4+} state and iron was mainly in Fe{sup 2+} state when other tin bonding states were detected only in a small amounts. Iron bonding states in contrary to elemental compositions of the coatings were not influenced by the RF bias applied on the substrate. The coatings showed high transparency in the visible spectral range. However, an increased metallic behavior could be detected by using a higher RF bias for the deposition. The X-ray diffraction patterns and electron microscopy pictures made on the coatings confirmed the presence of an amorphous phase. - Highlights: • RF magnetron sputtering of SnO{sub 2} target with Fe inset in argon investigated by mass spectrometry • Optical properties of Fe doped SnO{sub x} coatings characterized • Analyses of overlapped XPS peaks at a spectrum from Fe doped SnO{sub x} coatings

  2. Device for removing impurities from liquid metals

    International Nuclear Information System (INIS)

    Naito, Kesahiro; Yokota, Norikatsu; Shimoyashiki, Shigehiro; Takahashi, Kazuo; Ishida, Tomio.

    1984-01-01

    Purpose: To attain highly reliable and efficient impurity removal by forming temperature distribution the impurity removing device thereby providing the function of corrosion product trap, nuclear fission product trap and cold trap under the conditions suitable to the impurity removing materials. Constitution: The impurity removing device comprises a container containing impurity removing fillers. The fillers comprise material for removing corrosion products, material for removing nuclear fission products and material for removing depositions from liquid sodium. The positions for the respective materials are determined such that the materials are placed under the temperature conditions easy to attain their function depending on the temperature distribution formed in the removing device, whereby appropriate temperature condition is set to each of the materials. (Yoshino, Y.)

  3. Spectrophotometric determination of Sn+2 in lyophilized kit for labeling with 99mTc

    International Nuclear Information System (INIS)

    Araujo, Elaine Bortoleti; Sampel, Carolina Judith; Melo, Ivani Bortoleti; Okamoto, Miriam R.Y; Silva, Constancia P.G

    2004-01-01

    The preparation of 99 mTc labeled radiopharmaceuticals depends on the reduction of the technetium pertechnetate, commonly by stannous chloride (SnCl 2 ). The determination of the Sn +2 contents in the lyophilized preparations represents an important quality control procedure that may be applied to the process and to the final product. The objective os this work is the optimization of an spectrophotometric assay to the determination os Sn +2 contents in a citrate-stannous lyophilized kit for 99 mTc labeling. The spectrophotometric methodology employed is based in the colour development when Sn +2 reacts with sodium molybdate in the presence of potasium thiocyanate in chloridric medium. The colourfull reaction studied showed high stability after 60 minutes of the mixtures preparation. The sequence of reagents introduction in the reaction mixture was determinant to the assay. The molibdenium-stannous-tiocianate sequence produces calibration curves with good correlations (R2 ≥ 0.99). The concentrations of the molibdenium solution was also studied, in order to determine a ideal concentration for the Sn +2 range. The spectrophotometric method studied was usefull to the determination of Sn +2 content in different batches of citrate-stannous preparations. The method was fast and easy and can be applied to different stages of the production process, in order to guarantee the content of Sn +2 in the preparations (Au)

  4. Anion exchange chromatography of 99mTc(Sn)-EHDP complexes: determination of the charge of the components and influence of pH and ligand concentration

    International Nuclear Information System (INIS)

    Huigen, Y.M.; Diender, M.; Gelsema, W.J.; De Ligny, C.L.

    1991-01-01

    The components of a 99m Tc(Sn)-EHDP complex mixture were separated by means of normal pressure and high-pressure anion exchange chromatography. Precautions were taken to prevent the dissociation of the complexes during chromatography. The charges of the components were determined according to the methods of Wilson and Pinkerton (1985) and Russell and Bischoff (1985). The values of the charges obtained with the two methods are not in agreement. Russell and Bischoff's method, in which a reference ion is used, must be preferred. However, even with this method the accuracy of the data obtained is probably limited, due to the difficulty of making corrections for activity coefficients of highly-charge ions at the rather high electrolyte concentrations that must be used in the ion exchange method. So, we think that it is only warranted to conclude that the mean charge of the components of 99m Tc(Sn)-EHDP is about -6 at pH 7, and that the charges of the individual components are in the range of -4 to -9. The influence of pH and ligand concentration in the reaction mixture was determined with high pressure anion exchange chromatography. It was found that a decrease in the pH of the reaction mixture favours the production of complexes with a long retention time, which leads to a slightly higher mean charge. The ligand concentration of the reaction mixture scarcely influenced the relative concentrations of the components. (author)

  5. Coupling of ion temperature gradient and trapped electron modes in the presence of impurities in tokamak plasmas

    Science.gov (United States)

    Du, Huarong; Wang, Zheng-Xiong; Dong, J. Q.; Liu, S. F.

    2014-05-01

    The coupling of ion temperature gradient (ITG or ηi) mode and trapped electron mode (TEM) in the presence of impurity ions is numerically investigated in toroidal collisionless plasmas, using the gyrokinetic integral eigenmode equation. A framework for excitations of the ITG modes and TEMs with respect to their driving sources is formulated first, and then the roles of impurity ions played in are analyzed comprehensively. In particular, the characteristics of the ITG and TEM instabilities in the presence of impurity ions are emphasized for both strong and weak coupling (hybrid and coexistent) cases. It is found that the impurity ions with inwardly (outwardly) peaked density profiles have stabilizing (destabilizing) effects on the hybrid (namely the TE-ITG) modes in consistence with previous works. A new finding of this work is that the impurity ions have stabilizing effects on TEMs in small ηi (ηi≤1) regime regardless of peaking directions of their density profiles whereas the impurity ions with density gradient Lez=Lne/Lnz>1 (LezTEMs in large ηi (ηi≥1) regime. In addition, the dependences of the growth rate, real frequency, eigenmode structure, and wave spectrum on charge concentration, charge number, and mass of impurity ions are analyzed in detail. The necessity for taking impurity ion effects on the features of turbulence into account in future transport experimental data analyses is also discussed.

  6. Laser-induced fluorescence of metal-atom impurities in a neutral beam

    International Nuclear Information System (INIS)

    Burrell, C.F.; Pyle, R.V.; Sabetimani, Z.; Schlachter, A.S.

    1984-10-01

    The need to limit impurities in fusion devices to low levels is well known. We have investigated, by the technique of laser-induced fluorescence, the concentration of heavy-metal atoms in a neutral beam caused by their evaporation from the hot filaments in a conventional high-current multifilament hydrogen-ion source

  7. Stress effects on multifilamentary Nb3Sn wire

    International Nuclear Information System (INIS)

    Bartlett, R.J.; Taylor, R.D.; Thompson, J.D.

    1979-01-01

    Critical current I/sub c/ measurements were obtained on highly stabilized mf Nb 3 Sn wires as a function of heat treatment, stress, temperature, and applied magnetic field. The ratio of the area of the copper to bronze core-niobium tube is about 8, and the filaments are concentrated in the inner 30% of the wire cross section. Values of I/sub c/ and T/sub c/ were determined for samples subjected to a wide range of heat treatments. Diffusion reaction times and temperatures in the ranges 16 to 128 hr and 700 to 750 0 C provided a number of mf Nb 3 Sn wires having similar I/sub c/ characteristics. To some extent the residual compressive loading on the Nb 3 Sn wires varied with the particular heat treatment. This loading arises primarily from the differential contraction of the remaining bronze and the Nb 3 Sn layer when cooled from the reaction temperature to the operating temperature. It was found that, by controlled bending or stretching of the wires, whereby some of the strain in the Nb 3 Sn is relieved, the I/sub c/ at 14 K is increased by as much as 30% and the critical temperature is increased by up to 1 K

  8. Preparation of Nafion 117™-SnO2 Composite Membranes using an Ion-Exchange Method

    DEFF Research Database (Denmark)

    Nørgaard, Casper Frydendal; Nielsen, Ulla Gro; Skou, Eivind Morten

    2012-01-01

    Nafion 117™-SnO2 composite membranes were prepared by in-situ particle formation using an ion-exchange method. SnO2 was incorporated into Nafion 117ä membranes by ion-exchange in solutions of SnCl2 ∙2 H2O in methanol, followed by oxidation to SnO2 in air. By adjustment of the concentration of SnCl2...... ∙ 2 H2O used in the ion-exchange step, compositions ranging from 2 to 8 wt% SnO2 with SnO2 homogeneously distributed as nanoparticles were obtained. The prepared nanocomposite membranes were characterized by powder XRD, 119Sn MAS NMR spectroscopy, electrochemical impedance spectroscopy, water uptake...

  9. Measurements of impurity migration in graphite at high temperatures using a proton microprobe

    International Nuclear Information System (INIS)

    Shroy, R.E.; Soo, P.; Sastre, C.A.; Schweiter, D.G.; Kraner, H.W.; Jones, K.W.

    1978-01-01

    The migration of fission products and other impurities through the graphite core of a High Temperature Gas Cooled Reactor is of prime importance in studies of reactor safety. Work in this area is being carried out in which graphite specimens are heated to temperatures up to 3800 0 C to induce migration of trace elements whose local concentrations are then measured with a proton microprobe. This instrument is a powerful device for such work because of its ability to determine concentrations at a part per million (ppm) level in a circular area as small as 10 μm while operating in an air environment. Studies show that Si, Ca, Cl, and Fe impurities in graphite migrate from hotter to cooler regions. Also Si, S, Cl, Ca, Fe, Mn, and Cr are observed to escape from the graphite and be deposited on cooler surfaces

  10. Formation of the gaseous phase of impurity elements from coal combustion at a thermal power plant

    International Nuclear Information System (INIS)

    Kizil'shtein, L.Ya.; Levchenko, S.V.; Peretyakt'ko, A.G.

    1991-01-01

    Data are reported on the distribution of impurity elements in their principal carriers: organic matter, iron sulfides, and clays. Tests with high-temperature combustion of coals and argillites indicate that elements associated with clay minerals largely remain in ash and slag. They do not pass to the gas phase - a factor to be considered in assessment of environmental impact from thermal power plants and specification of toxic concentration levels of impurity elements in coal

  11. Magnetic states of single impurity in disordered environment

    Directory of Open Access Journals (Sweden)

    G.W. Ponedilok

    2013-01-01

    Full Text Available The charged and magnetic states of isolated impurities dissolved in amorphous metallic alloy are investigated. The Hamiltonian of the system under study is the generalization of Anderson impurity model. Namely, the processes of elastic and non-elastic scattering of conductive electrons on the ions of a metal and on a charged impurity are included. The configuration averaged one-particle Green's functions are obtained within Hartree-Fock approximation. A system of self-consistent equations is given for calculation of an electronic spectrum, the charged and the spin-polarized impurity states. Qualitative analysis of the effect of the metallic host structural disorder on the observed values is performed. Additional shift and broadening of virtual impurity level is caused by a structural disorder of impurity environment.

  12. SnO{sub 2}/reduced graphene oxide composite films for electrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Bondarenko, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V., E-mail: mazanikalexander@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Korolik, O.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

    2015-12-15

    Highlights: • SnO{sub 2}/GO composites with mass fraction of carbon phase 0.01% ≤ w{sub C} ≤ 80% have been formed. • 400 °C annealing was applied for GO reduction in the composites. • SnO{sub 2}/rGO composites demonstrate a high electrocatalytic activity in anodic processes. • Exchange current density grows linearly with carbon phase concentration at w{sub C} ≤ 10%. - Abstract: SnO{sub 2}/GO (GO is graphene oxide) composite films with GO mass fraction w{sub C} ranging from 0.01 to 80% have been prepared using colloidal solutions. Heat treatment of SnO{sub 2}/GO films in Ar atmosphere at 400 °C leads to GO reduction accompanied by partial exfoliation and decreasing of the particle thickness. SnO{sub 2}/rGO (rGO is reduced GO) film electrodes demonstrate a high electrocatalytic activity in the anodic oxidation of inorganic (iodide-, chloride-, sulfite-anions) and organic (ascorbic acid) substances. The increase of the anodic current in these reactions is characterized by overpotential inherent to the individual rGO films and exchange current density grows linearly with rGO concentration at w{sub C} ≤ 10% indicating that the rGO particles in composites act as sites of electrochemical process. The SnO{sub 2}/rGO composite films, in which the chemically stable oxide matrix encapsulates the rGO inclusions, can be considered as a promising material for applied electrochemistry.

  13. Mobile impurities in ferromagnetic liquids

    Science.gov (United States)

    Kantian, Adrian; Schollwoeck, Ulrich; Giamarchi, Thierry

    2011-03-01

    Recent work has shown that mobile impurities in one dimensional interacting systems may exhibit behaviour that differs strongly from that predicted by standard Tomonaga-Luttinger liquid theory, with the appearance of power-law divergences in the spectral function signifying sublinear diffusion of the impurity. Using time-dependent matrix product states, we investigate a range of cases of mobile impurities in systems beyond the analytically accessible examples to assess the existence of a new universality class of low-energy physics in one-dimensional systems. Correspondence: Adrian.Kantian@unige.ch This work was supported in part by the Swiss SNF under MaNEP and division II.

  14. Comparative thermodynamic analysis of the Pb-Au0.7Sn0.3 section in the Pb-Au-Sn ternary system

    International Nuclear Information System (INIS)

    Trumic, B.; Zivkovic, D.; Zivkovic, Z.; Manasijevic, D.

    2005-01-01

    The results of comparative thermodynamic analysis of Pb-Au 0.7 Sn 0.3 section in Pb-Au-Sn system are presented in this paper. Investigation was done comparatively by calorimetric measurements and thermodynamic calculation according to the general solution model. Thermodynamic parameters, such as partial and integral molar quantities, were determined at different temperatures. The comparison between experimental and calculated results showed mutual agreement. Demixing tendency of lead, presented in the positive deviation from ideal behavior, was confirmed through the study of concentration fluctuation in the long-wavelength limit. Also, chosen alloys in the investigated section were characterized using SEM-EDX analysis

  15. Effect of impurity modes with quasilocal and local frequencies on the superconducting transition temperature

    International Nuclear Information System (INIS)

    Zhernov, A.P.; Malov, Yu.A.; Panova, G.Kh.

    1975-01-01

    An anisotropic irregular semiconductor is under consideration. It is believed that the effective parameter of the interaction-lambda-which determines electron coupling is less or about 0.5. The Eliashberg integral equation system is solved for T→Tsub(c). A simple analytic expression is obtained for Tsub(c). The character of a varying critical temperature in superconductors with impurity atoms is analyzed in detail. The dependence of the critical temperature on parameters describing the phonon spectrum of an impurity system is investigated. The existence of impurity modes with quasilocal and local frequencies in the phonon spectra can lead both to relatively small and to rather noticeable variations in Tsub(c). The first case is typical of the situation when an impurity atom is practically an isotopic defect. If an impurity atom is very heavy (Msub(I) 1 0 ) or strongly (γ 1 >>γ 0 ) coupled with matrix atoms. A sharp decrease in the effective force constant γ 1 for an impurity atom results in the growth of delta Tsub(c): delta Tsub(c) approximately cγ0/γ 1 (lambda - μsup((0)). On the contrary a rise in the γ 1 value requires a negative correction to Tsub(c), and delta Tsub(c) approximately c/(lambda - μsup((0)), where c - an impurity concentration, μ - matrix element of the Coulomb screened interaction averaged over the Fermi surface and multiplied for the density of normal electron states on the Fermi level. Comparison with experimental data is made. A qualitative description of the Tsub(c) change due to the impurity presence is given for a set of solutions. There is a satisfactory quantitative agreement between calculated and experimental values of delta Tsub(c)

  16. Ethanol electrooxidation on Pt-Sn and Pt-Sn-W bulk alloys

    Energy Technology Data Exchange (ETDEWEB)

    Anjos, D.M. dos; Hahn, F.; Leger, J.M.; Kokoh, K.B. [Universite de Poitiers, Poitiers Cedex (France). Centre National de la Recherche Scientifique (CNRS). Equipe Electrocatalyse; Tremiliosi-Filho, G. [Universidade de Sao Paulo (USP), Sao Carlos, SP (Brazil). Inst. de Quimica

    2008-07-01

    Ethanol oxidation has been studied on Pt-Sn and Pt-Sn-W electrodes prepared in an arc-melting furnace. Different electrochemical techniques like cyclic voltammetry and chronoamperometry were used to evaluate the catalytic activity of these materials. The electro-oxidation process was also investigated by in situ infrared reflectance spectroscopy in order to determine adsorbed intermediates and reaction products. Experimental results indicated that Pt-Sn and Pt-Sn-W alloys are able to oxidize ethanol mainly to acetaldehyde and acetic acid. Adsorbed CO was also detected, demonstrating the viability of splitting the C-C bond in the ethanol molecule during the oxidation process. The adsorbed CO was further oxidized to CO{sub 2}.This reaction product was clearly detected by SNIFTIRS. Pt-Sn-W catalyst showed a better electrochemical performance than Pt-Sn that, in it turn, is better than Pt-alone. (author)

  17. Influence of complex impurity centres on radiation damage in wide-gap metal oxides

    Energy Technology Data Exchange (ETDEWEB)

    Lushchik, A., E-mail: aleksandr.lushchik@ut.ee [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Lushchik, Ch. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Popov, A.I. [Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga LV-1063 (Latvia); Schwartz, K. [GSI Helmholtzzentrum für Schwerionenforschung (GSI), Planckstr. 1, 64291 Darmstadt (Germany); Shablonin, E.; Vasil’chenko, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia)

    2016-05-01

    Different mechanisms of radiation damage of wide-gap metal oxides as well as a dual influence of impurity ions on the efficiency of radiation damage have been considered on the example of binary ionic MgO and complex ionic–covalent Lu{sub 3}Al{sub 5}O{sub 12} single crystals. Particular emphasis has been placed on irradiation with ∼2 GeV heavy ions ({sup 197}Au, {sup 209}Bi, {sup 238}U, fluence of 10{sup 12} ions/cm{sup 2}) providing extremely high density of electronic excitations within ion tracks. Besides knock-out mechanism for Frenkel pair formation, the additional mechanism through the collapse of mobile discrete breathers at certain lattice places (e.g., complex impurity centres) leads to the creation of complex defects that involve a large number of host atoms. The experimental manifestations of the radiation creation of intrinsic and impurity antisite defects (Lu|{sub Al} or Ce|{sub Al} – a heavy ion in a wrong cation site) have been detected in LuAG and LuAG:Ce{sup 3+} single crystals. Light doping of LuAG causes a small enhancement of radiation resistance, while pair impurity centres (for instance, Ce|{sub Lu}–Ce|{sub Al} or Cr{sup 3+}–Cr{sup 3+} in MgO) are formed with a rise of impurity concentration. These complex impurity centres as well as radiation-induced intrinsic antisite defects (Lu|{sub Al} strongly interacting with Lu in a regular site) tentatively serve as the places for breathers collapse, thus decreasing the material resistance against dense irradiation.

  18. Lattice dynamics of impurity clusters : application to pairs

    International Nuclear Information System (INIS)

    Chandralekha Devi, N.; Behera, S.N.

    1979-01-01

    A general solution is obtained for the lattice dynamics of a cluster of n-impurity atoms using the double-time Green's function formalism. The cluster is characterized by n-mass defect and m-force constant change parameters. It is shown that this general solution for the Green's function for the n-impurity cluster can also be expressed in terms of the Green's function for the (n-1)-impurity cluster. As an application, the cluster impurity modes for a pair are calculated using the Debye model for the host lattice dynamics. The splitting of the high frequency local modes and nearly zero frequency resonant modes due to pairs show an oscillatory behaviour on varying the distance of separation between the two impurity atoms. These oscillations are most prominent for two similar impurities and get damped for two dissimilar impurities or if one of the impurities produces a force constant change. The predictions of the calculation provide qualitative explanation of the data obtained from the infrared measurements of the resonant modes in mixed crystal system of KBrsub(1-c)Clsub(c):Lisup(+) and KBrsub(1-c)Isub(c):Lisup(+). (author)

  19. Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

    Science.gov (United States)

    Kanzyuba, Vasily; Dong, Sining; Liu, Xinyu; Li, Xiang; Rouvimov, Sergei; Okuno, Hanako; Mariette, Henri; Zhang, Xueqiang; Ptasinska, Sylwia; Tracy, Brian D.; Smith, David J.; Dobrowolska, Margaret; Furdyna, Jacek K.

    2017-02-01

    We describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. These structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

  20. Effects of radiation and impurities on gaseous iodine behavior in a containment vessel

    International Nuclear Information System (INIS)

    Takahashi, Masato; Watanabe, Atsushi; Hashimoto, Takashi

    2000-01-01

    In order to estimate the effect of impurities and radiation on gaseous iodine behavior in containment vessel, NUPEC has improved IMPAIR-3 code developed by PSI. Several modifications on the iodine oxidation by radiolysis and the production of nitric acid, the existence of boric acid, and the reaction of silver particle with iodine were newly added in evaluating the effect of radiolysis and impurities. pH change resulting from presence of boric acid, nitric acid production by radiolysis of air, and sodium hydroxide addition by AM operation, was also considered. The code verification for pH change was performed using the RTF experimental results. Additionally, the effects of boric acid and silver impurities on gaseous iodine behavior were evaluated by the sensitivity analysis. As a result, the experimental results of iodine concentration transient under pH change were well simulated. The following results were also obtained from the sensitive analysis. The gaseous iodine behavior was not affected by the existence of boric acid. In the case of silver existence in liquid phase, the gaseous iodine concentration rapidly decreased because a large amount of iodine changed into AgI species in liquid phase. The restraint effect of silver on gaseous iodine, production was larger than that of pH change. (author)

  1. Impurity transport in the Wendelstein VII-A stellarator

    International Nuclear Information System (INIS)

    1985-01-01

    Impurity radiation losses in net-current-free neutral-beam-heated plasmas in the Wendelstein W VII-A stellarator are the combined effect of particularly strong impurity sources and improved particle confinement as compared with ohmically heated tokamak-like plasma discharges. Experiments are described and conclusions are drawn about the impurity species, their origin and their transport behaviour. The impurity transport is modelled by a 1-D impurity transport and radiation code. The evolution of the total radiation in time and space deduced from soft-X-ray and bolometer measurements can be fairly well simulated by the code. Experimentally, oxygen was found to make the main contribution to the radiation losses. In the calculations, an influx of cold oxygen desorbed from the walls of the order of 10 13 -10 14 cm -2 .s -1 and a rate of fast injected oxygen corresponding to a 1% impurity content of the neutral beams in combination with neoclassical impurity transport leads to quantitative agreement between the simulation and the observed radiation. The transport of A1 trace impurities injected by the laser blow-off technique was experimentally studied by soft-X-ray measurements using a differential method allowing extraction of the time evolution of A1 XII, XIII radial profiles. These are compared with code predictions, together with additional spectroscopic measurements. The main features of the impurity transport are consistent with neoclassical predictions, which explain particularly the central impurity accumulation. Some details, however, seem to require additional 'anomalous' transport. Such an enhancement is correlated with distortions of the magnetic configuration around resonant magnetic surfaces. (author)

  2. Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

    Directory of Open Access Journals (Sweden)

    E. Karageorgou

    2014-11-01

    Full Text Available SnO2 and Sn:In2O3 nanowires were grown on Si(001, and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.

  3. Uranium analysis. Impurities determination by spark mass spectrometry

    International Nuclear Information System (INIS)

    Anon.

    Determination of impurities in uranium, suitable for atomic content greater than 10 -8 , particularly adapted for a low content. The method is quantitative for metallic impurities and qualitative for non metallic impurities [fr

  4. Fluid and gyrokinetic simulations of impurity transport at JET

    DEFF Research Database (Denmark)

    Nordman, H; Skyman, A; Strand, P

    2011-01-01

    Impurity transport coefficients due to ion-temperature-gradient (ITG) mode and trapped-electron mode turbulence are calculated using profile data from dedicated impurity injection experiments at JET. Results obtained with a multi-fluid model are compared with quasi-linear and nonlinear gyrokinetic...... simulation results obtained with the code GENE. The sign of the impurity convective velocity (pinch) and its various contributions are discussed. The dependence of the impurity transport coefficients and impurity peaking factor −∇nZ/nZ on plasma parameters such as impurity charge number Z, ion logarithmic...

  5. Phase diagram of SnTe-CdSe cross-section of SnTe+CdSe reversible SnSe+CdTe ternary reciprocal system

    International Nuclear Information System (INIS)

    Dubrovin, I.V.; Budennaya, L.D.; Mizetskaya, I.B.; Sharkina, Eh.V.

    1986-01-01

    Phase equilibrium diagram of SnTe-CdSe cross-section of Sn, Cd long Te, Se ternary reciprocal system is investigated using the methods of differential thermal, X-ray phase, and microstructural analyses. Maximum length of solid solutions on the base of SnTe corresponds to approximately 14 mol.% at 1050 K and approximately 3 mol.% of CdSe at 670 K. Region of solid solutions on the base of CdSe corresponds to less than 1 mol.% of SnTe at room temperature. SnTe-CdSe cross-section is not a quasibinar one. Equilibrium is shifted to the left in the SnTe+CdSe reversible SnSe+CdTe reciprocal system

  6. Effect of crystalline electric fields and long-range magnetic order on superconductivity in rare earth alloys and compounds

    International Nuclear Information System (INIS)

    McCallum, R.W.

    1977-01-01

    The behavior of rare earth ions in a superconducting matrix has been studied in two distinct regimes. First, the effects of crystal field splitting of the 4f levels of a magnetic rare earth ion in the alloy system (LaPr)Sn 3 were investigated in the limit of low Pr 3+ concentration. In this system the rare earth impurity ions occupy random La sites in the crystal lattice. Second, the interaction of long-range magnetic order and superconductivity was explored in the ternary rare earth molybdenum chalcogenide systems. In these compounds the rare earth ions occupy periodic lattice sites in contrast to the random distribution of magnetic ions in dilute impurity alloy systems such as (LaPr)Sn 3

  7. Metallic superconductors. 3. Na3Sn and V3Ga wires (Part one)

    International Nuclear Information System (INIS)

    Tachikawa, Kyoji

    2010-01-01

    Nowadays Nb 3 Sn wires are being widely used as one of the key materials in advanced science and technology, with various applications such as NMR, fusion and cryogen-free superconducting magnets. In this article, at first microstructures and fundamental aspects as well as the effect of additional elements in Nb 3 Sn are outlined. Intrinsic superconducting performances, e.g. T c and B c2 , are quite sensitive to the stoichiometry of the Sn concentration. A small amount of Ti and Ta doping is much effective for the increase of B c2 in Nb 3 Sn. The effect of Cu on the enhancement of Nb 3 Sn synthesis has yielded a significant breakthrough for the industrial production of the wires. At present the bronze process and internal Sn process are the twin major fabrication techniques of Nb 3 Sn wires. The recent status of both processes is reviewed in this article. Pronounced progress has been achieved in the performance of Nb 3 Sn wires fabricated through both techniques. Although just half a century has passed since the first fabrication of Nb 3 Sn wire, further progress in Nb 3 Sn technology may be expected like the proverb saying 'Fresh water still comes out from an old spring'. (author)

  8. Comparative sensing of aldehyde and ammonia vapours on synthetic polypyrrole-Sn(IVarsenotungstate nanocomposite cation exchange material

    Directory of Open Access Journals (Sweden)

    Asif Ali Khan

    2017-06-01

    Full Text Available Polypyrrole-Sn(IVarsenotungstate (PPy-SnAT conductive nanocomposite cation exchange have been synthesized by in-situ chemical oxidative polymerization of polypyrrole with Sn(IVarsenotungstate (SnAT. PPy-SnAT nanocomposite was characterized by Fourier transform infra-red spectroscopy (FTIR, X-Ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, energy-dispersive x-ray (EDX and thermogravimetric analysis (TGA. The ion exchange capacity (IEC and DC electrical conductivity of nanocomposite was found to be 2.50 meq/g and 5.05 × 10−1 S/cm respectively. The nanocomposite showed appreciable isothermal stability in terms of DC electrical conductivity retention under ambient condition up to 130 °C. The nanocomposite cation exchange based sensor for detection of formaldehyde and ammonia vapours were fabricated at room temperature. It was revealed that the resistivity of the nanocomposite increases on exposure to higher percent concentration of ammonia and lower concentration of formaldehyde at room temperature (25 °C.

  9. Method for detecting trace impurities in gases

    Science.gov (United States)

    Freund, S.M.; Maier, W.B. II; Holland, R.F.; Beattie, W.H.

    A technique for considerably improving the sensitivity and specificity of infrared spectrometry as applied to quantitative determination of trace impurities in various carrier or solvent gases is presented. A gas to be examined for impurities is liquefied and infrared absorption spectra of the liquid are obtained. Spectral simplification and number densities of impurities in the optical path are substantially higher than are obtainable in similar gas-phase analyses. Carbon dioxide impurity (approx. 2 ppM) present in commercial Xe and ppM levels of Freon 12 and vinyl chloride added to liquefied air are used to illustrate the method.

  10. Process and system for removing impurities from a gas

    Science.gov (United States)

    Henningsen, Gunnar; Knowlton, Teddy Merrill; Findlay, John George; Schlather, Jerry Neal; Turk, Brian S

    2014-04-15

    A fluidized reactor system for removing impurities from a gas and an associated process are provided. The system includes a fluidized absorber for contacting a feed gas with a sorbent stream to reduce the impurity content of the feed gas; a fluidized solids regenerator for contacting an impurity loaded sorbent stream with a regeneration gas to reduce the impurity content of the sorbent stream; a first non-mechanical gas seal forming solids transfer device adapted to receive an impurity loaded sorbent stream from the absorber and transport the impurity loaded sorbent stream to the regenerator at a controllable flow rate in response to an aeration gas; and a second non-mechanical gas seal forming solids transfer device adapted to receive a sorbent stream of reduced impurity content from the regenerator and transfer the sorbent stream of reduced impurity content to the absorber without changing the flow rate of the sorbent stream.

  11. Impurity control in TFTR

    International Nuclear Information System (INIS)

    Cecchi, J.L.

    1980-06-01

    The control of impurities in TFTR will be a particularly difficult problem due to the large energy and particle fluxes expected in the device. As part of the TFTR Flexibility Modification (TEM) project, a program has been implemented to address this problem. Transport code simulations are used to infer an impurity limit criterion as a function of the impurity atomic number. The configurational designs of the limiters and associated protective plates are discussed along with the consideration of thermal and mechanical loads due to normal plasma operation, neutral beams, and plasma disruptions. A summary is given of the materials-related research, which has been a collaborative effort involving groups at Argonne National Laboratory, Sandia Laboratories, and Princeton Plasma Physics Laboratory. Conceptual designs are shown for getterng systems capable of regenerating absorbed tritium. Research on this topic by groups at the previously mentioned laboratories and SAES Research Laboratory is reviewed

  12. Determination of impurity elements in steel by spark source mass spectrometry using powdered salts

    International Nuclear Information System (INIS)

    Saito, Morimasa; Sudo, Emiko

    1975-01-01

    Determination of impurity elements in steel by speak source mass spectrometry using powdered salts sample electrode was studied. The instrument used in this study was an AEI MS-7 mass spectrograph and the ion detector was Ilford Q2 photograph. Sample, (0.5--1) gram, was dissolved in hydrochloric acid (1 : 1) or nitric acid (1 : 1) together with yttrium of 1 microgram as the internal standard and then the solution was evaporated to dryness without baking. The salt residues were dried at 70 0 C for 30 minutes under vacuum. They were mixed with an equal amount of graphite powder for 5 minutes in a mixer mill, and then pressed into electrodes. When the relative sensitivity coefficient (Fe=1) was determined by using NBS 460 series standard samples, the results obtained by the proposed method for elements of Mo, Sn, Cu, Cr, Co, Ni, Mn, V, P, Si, and B were in good agreement with those obtained by the conventional method using solid sample electrodes (the solid method) and the precision of this method for 11 elements mentioned above was about 10% better than those of the solid method. However, both the accuracy and precision for elements of Nb, Ti, S and W were not good. This method was applied to the determination of impurities in NBS stainless steel and others. The relative standard deviations were within 20%. (auth.)

  13. Local chemistry of Al and P impurities in silica

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Stokbro, Kurt

    2000-01-01

    The local structure around Al and P impurities in silica is investigated using density-functional theory. Two distinct cases are considered: impurities substituting for a Si atom in alpha quartz, and impurities implanted in a stoichiometric alpha-quartz crystal. Both impurity elements are found t...

  14. Impurity transport in internal transport barrier discharges on JET

    International Nuclear Information System (INIS)

    Dux, R.; Giroud, C.; Zastrow, K.-D.

    2004-01-01

    Impurity behaviour in JET internal transport barrier (ITB) discharges with reversed shear has been investigated. Metallic impurities accumulate in cases with too strong peaking of the main ion density profile. The accumulation is due to inwardly directed drift velocities inside the ITB radius. The strength of the impurity peaking increases with the impurity charge and is low for the low-Z elements C and Ne. Transport calculations show that the observed behaviour is consistent with dominant neoclassical impurity transport inside the ITB. In some cases, MHD events in the core flatten the radial profile of the metallic impurity. (author)

  15. Experimental Characterization of the Poisoning Effects of Methanol-Based Reformate Impurities on a PBI-Based High Temperature PEM Fuel Cell

    Directory of Open Access Journals (Sweden)

    Samuel Simon Araya

    2012-10-01

    Full Text Available In this work the effects of reformate gas impurities on a H3PO4-doped polybenzimidazole (PBI membrane-based high temperature proton exchange membrane fuel cell (HT-PEMFC are studied. A unit cell assembly with a BASF Celtec®-P2100 high temperature membrane electrode assembly (MEA of 45 cm2 active surface area is investigated by means of impedance spectroscopy. The concentrations in the anode feed gas of all impurities, unconverted methanol-water vapor mixture, CO and CO2 were varied along with current density according to a multilevel factorial design of experiments. Results show that all the impurities degrade the performance, with CO being the most degrading agent and CO2 the least. The factorial analysis shows that there is interdependence among the effects of the different factors considered. This interdependence suggests, for example, that tolerances to concentrations of CO above 2% may be compromised by the presence in the anode feed of CO2. Methanol has a poisoning effect on the fuel cell at all the tested feed ratios, and the performance drop is found to be proportional to the amount of methanol in feed gas. The effects are more pronounced when other impurities are also present in the feed gas, especially at higher methanol concentrations.

  16. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  17. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    International Nuclear Information System (INIS)

    Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

  18. Impurities-Si interstitials interaction in Si doped with B or Ga during ion irradiation

    International Nuclear Information System (INIS)

    Romano, L; Piro, A M; Grimaldi, M G; Rimini, E

    2005-01-01

    Substitutional impurities (B, Ga) in Si experienced an off-lattice displacement during ion-irradiation using a H + or He + beam at room temperature in random incidence. Samples were prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 x10 20 at.cm -3 confined in a 300 nm thick surface region. The lattice location of impurities was performed by a channelling technique along different axes ( , ) using the 11 B(p,α) 8 Be reaction and standard RBS for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation in random incidence, until it saturates at χ F I ) generated by the impinging beam in the doped region

  19. Development and manufacturing of bronze-processed Ta-added Nb3Sn wires for the ITER

    International Nuclear Information System (INIS)

    Kikuchi, Kenichi; Seidou, Masahiro; Iwaki, Genzou; Sakai, Syuuji; Moriai, Hidezumi; Nishi, Masataka; Yoshida, Kiyoshi; Isono, Takaaki; Tsuji, Hiroshi.

    1997-01-01

    Development work to produce a high-performance Nb 3 Sn superconducting wire for the center solenoid coil of the ITER was carried out. The effects of concurrently adding Ti and Ta to bronze-processed Nb 3 Sn wires were examined. In addition, a high-Sn-concentration bronze matrix was applied. Then, the relation between hysteresis loss and filament diameter was examined. Moreover, the cause of wire breakage during processing was elucidated. As a result, a reliable manufacturing process for high-performance Nb 3 Sn superconducting wire was established. (author)

  20. Local order dependent impurity levels in alloy semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da; Ecole Normale Superieure, 75 - Paris

    1981-01-01

    We develop a one band/may sites model for an isoelectronic impurity in a semiconductor alloy. The cluster-Bethe-lattice approximation is used to study the dependence of the impurity energy level upon the short range order (SRO) of the alloy. The Kikuchi parametrization is used to describe the latter. We take into account diagonal disorder only, with possible off-diagonal relaxation around the impurity site. All the inequivalent clusters of the impurity site and its first nearest neighbours are considered, thus including the important short range alloy potential fluctuations. Results are presented for the local density of impurity states, for different degrees of SRO in the alloy. (Author) [pt

  1. Controlling the antibacterial activity of CuSn thin films by varying the contents of Sn

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Yujin; Park, Juyun; Kim, Dong-Woo; Kim, Hakjun; Kang, Yong-Cheol, E-mail: yckang@pknu.ac.kr

    2016-12-15

    Highlights: • We deposit CuSn thin films on a Si substrate with various Cu/Sn ratio. • Antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time increased. • XPS was utilized to assign the chemical environment of CuSn thin films before and after antibacterial test. - Abstract: We investigated antibacterial activity of CuSn thin films against Gram positive Staphylococcus aureus (S. aureus). CuSn thin films with different Cu to Sn ratios were deposited on Si(100) by radio frequency (RF) magnetron sputtering method using Cu and Sn metal anodes. The film thickness was fixed at 200 nm by varying the sputtering time and RF power on the metal targets. The antibacterial test was conducted in various conditions such as different contact times and Cu to Sn ratios in the CuSn films. The antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time between the film and bacteria suspension increased execpt in the case of CuSn-83. The oxidation states of Cu and Sn and the chemical composition of CuSn thin films before and after the antibacterial test were investigated by X-ray photoelectron spectroscopy (XPS). When the contact time was fixed, the Cu species was further oxidized as the RF power on Cu target increased. The intensity of Sn 3d decreased with increasing Cu ratio. When the sample was fixed, the peak intensity of Sn 3d decreased as the contact time increased due to the permeation of Sn into the cell.

  2. Segregation of chlorine in n-type tin monosulfide ceramics: Actual chlorine concentration for carrier-type conversion

    Science.gov (United States)

    Iguchi, Yuki; Sugiyama, Taiki; Inoue, Kazutoshi; Yanagi, Hiroshi

    2018-05-01

    Tin monosulfide (SnS) is an attractive material for photovoltaic cells because of its suitable band-gap energy, high absorption coefficient, and non-toxic and abundant constituent elements. The primary drawback of this material is the lack of n-type SnS. We recently demonstrated n-type SnS by doping with Cl. However, the Cl-doped n-type SnS bulk ceramics exhibited an odd behavior in which carrier-type conversion but not electron carrier concentration depended on the Cl concentration. In this study, the electron probe microanalysis (EPMA) elemental mapping of Cl-doped SnS revealed continuous homogeneous regions with a relatively low Cl concentration along with the islands of high Cl concentration in which Sn/S is far from unity. The difference between the Cl concentration in the homogeneous region (determined by EPMA) and the bulk Cl concentration (determined by wavelength-dispersive X-ray fluorescence spectroscopy) increased with the increasing Cl doping amount. The carrier concentration and the Hall coefficient clearly depended on the Cl concentration in the homogeneous region. Carrier-type conversion was observed at the Cl concentration of 0.26 at. % (in the homogeneous region).

  3. Spectral and ion emission features of laser-produced Sn and SnO2 plasmas

    Science.gov (United States)

    Hui, Lan; Xin-Bing, Wang; Du-Luo, Zuo

    2016-03-01

    We have made a detailed comparison of the atomic and ionic debris, as well as the emission features of Sn and SnO2 plasmas under identical experimental conditions. Planar slabs of pure metal Sn and ceramic SnO2 are irradiated with 1.06 μm, 8 ns Nd:YAG laser pulses. Fast photography employing an intensified charge coupled device (ICCD), optical emission spectroscopy (OES), and optical time of flight emission spectroscopy are used as diagnostic tools. Our results show that the Sn plasma provides a higher extreme ultraviolet (EUV) conversion efficiency (CE) than the SnO2 plasma. However, the kinetic energies of Sn ions are relatively low compared with those of SnO2. OES studies show that the Sn plasma parameters (electron temperature and density) are lower compared to those of the SnO2 plasma. Furthermore, we also give the effects of the vacuum degree and the laser pulse energy on the plasma parameters. Project supported by the National Natural Science Foundation of China (Grant No. 11304235) and the Director Fund of WNLO, China.

  4. Effect of Pd ion doping in the band gap of SnO{sub 2} nanoparticles: structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Nandan, Brajesh; Venugopal, B. [Pondicherry University, Centre for Nanoscience and Technology (India); Amirthapandian, S.; Panigrahi, B. K. [Indira Gandhi Centre for Atomic Research, Ion Beam and Computer Simulation Section, Materials Science Group (India); Thangadurai, P., E-mail: thangadurai.p@gmail.com [Pondicherry University, Centre for Nanoscience and Technology (India)

    2013-10-15

    Pd ion doping has influenced the band gap of SnO{sub 2} nanoparticles. Undoped and Pd ion-doped SnO{sub 2} nanoparticles were synthesized by chemical co-precipitation method. A tetragonal phase of SnO{sub 2} with a grain size range of 7-13 nm was obtained (studied by X-ray diffraction and transmission electron microscopy). A decreasing trend in the particle size with increasing doping concentration was observed. The presence of Pd in doped SnO{sub 2} was confirmed by chemical analysis carried out by energy-dispersive spectroscopy in the transmission electron microscope. Diffuse reflectance spectra showed a blue shift in absorption with increasing palladium concentration. Band gap of SnO{sub 2} nanoparticles was estimated from the diffuse reflectance spectra using Kubelka-Munk function and it was increasing with the increase of Pd ion concentration from 3.73 to 4.21 eV. The variation in band gap is attributed predominantly to the lattice strain and particle size. All the samples showed a broad photoluminescence emission centered at 375 nm when excited at 270 nm. A systematic study on the structural and optical properties of SnO{sub 2} nanoparticles is presented.

  5. Detection of DNA hybridization based on SnO2 nanomaterial enhanced fluorescence

    International Nuclear Information System (INIS)

    Gu Cuiping; Huang Jiarui; Ni Ning; Li Minqiang; Liu Jinhuai

    2008-01-01

    In this paper, enhanced fluorescence emissions were firstly investigated based on SnO 2 nanomaterial, and its application in the detection of DNA hybridization was also demonstrated. The microarray of SnO 2 nanomaterial was fabricated by the vapour phase transport method catalyzed by patterned Au nanoparticles on a silicon substrate. A probe DNA was immobilized on the substrate with patterned SnO 2 nanomaterial, respectively, by covalent and non-covalent linking schemes. When a fluorophore labelled target DNA was hybridized with a probe DNA on the substrate, fluorescence emissions were only observed on the surface of SnO 2 nanomaterial, which indicated the property of enhancing fluorescence signals from the SnO 2 nanomaterial. By comparing the different fluorescence images from covalent and non-covalent linking schemes, the covalent method was confirmed to be more effective for immobilizing a probe DNA. With the combined use of SnO 2 nanomaterial and the covalent linking scheme, the target DNA could be detected at a very low concentration of 10 fM. And the stability of SnO 2 nanomaterial under the experimental conditions was also compared with silicon nanowires. The findings strongly suggested that SnO 2 nanomaterial could be extensively applied in detections of biological samples with enhancing fluorescence property and high stability

  6. Fabrication of textured SnO2 transparent conductive films using self-assembled Sn nanospheres

    Science.gov (United States)

    Fukumoto, Michitaka; Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2018-06-01

    We present a novel method to fabricate textured surfaces on transparent conductive SnO2 films by processing substrates through a bottom-up technique with potential for industrially scalable production. The substrate processing consists of three steps: deposition of precursor Sn films on glass substrates, formation of a self-assembled Sn nanosphere layer with reductive annealing, and conversion of Sn to SnO2 by oxidative annealing. Ta-doped SnO2 films conformally deposited on the self-assembled nanospherical SnO2 templates exhibited attractive optical and electrical properties, namely, enhanced haze values and low sheet resistances, for applications as transparent electrodes in photovoltaics.

  7. Numerical simulation of impurity transport in Lake Baikal during the summer period

    Science.gov (United States)

    Tsydenov, Bair O.

    2017-11-01

    The distributions of impurities obtained as a result of numerical modeling on the Srednyaya arm (Selenga River mouth)- Cape Golyi cross-section of Lake Baikal, Siberia, Russia, are presented. The data on the air temperature, relative humidity, atmospheric pressure, humidity, and cloudiness from the Babushkin meteorological station from 01.06.2016 to 30.06.2016 are used as the weather condition in the mathematical model. The results of simulation have shown that the impurities dissolved in water reach the bottom of the Selenga shallow basin of Lake Baikal. As the heat accumulation increases and the river waters warm up, the maximum concentrations of suspended substances tend to remain in the upper layers of the lake.

  8. Spectroscopic system for impurity measurements in the TJ-1 Tokamak of JEN

    International Nuclear Information System (INIS)

    Navas, G.; Zurro, B.

    1982-01-01

    we describe a spectroscopic system with spatial resolution capability that has been configured for plasma diagnostic in the TJ-1 Tokamak of JEN. The experimental system, based on a one meter monochromator, has been absolutely calibrated using a tungsten-halogen lamp. The calibration procedures and the absolute spectral sensitivity are presented as well as its dependence with the polarization. A simplified spectroscopic model of the radiation emitted by the intrinsic plasma impurities (C, 0, . . . ) has been developed. A one dimensional model of the temporal evolution of various ionization stages in coronal equilibrium is used to predict the electron temperature and impurity concentration. This model has been applied to experimental data from several Tokamaks. (Author) 23 refs

  9. Determination of heavy metals impurities in low and medium atomic weight matrices

    International Nuclear Information System (INIS)

    Paiano, Silvestre; Prado Souza, Rose M.G. do

    1997-01-01

    Heavy materials have a mass attenuation coefficient in the energy interval from 100 to 400 KeV substantially higher than those corresponding to light and medium atomic weight matrices. They also show, in the same energy range, a more pronounced energy variation of this parameter. In a few cases, this property can be used for the determination of the concentration of impurities constituted by heavy metals in a lighter matrix. An Ytterbium gamma-ray source, which has several energy peaks in the considered interval, is used to supply a number of energy pairs from which the density of impurities can be found without the use of reference materials. (author). 1 ref., 4 figs

  10. Controllable synthesis of Au@SnO2 core-shell nanohybrids with enhanced photocatalytic activities

    Science.gov (United States)

    Zhang, Shaofeng; Hao, Jinggang; Ren, Feng; Wu, Wei; Xiao, Xiangheng

    2017-05-01

    Combination of semiconductors with plasmonic nanostructures is an effective route to promote the solar light harvesting as well as the efficiency of photocatalysis. In the present work, the Au@SnO2 hybrid nanostructures with Au nanorods as the cores and highly crystallized SnO2 nanoparticles as the shells were fabricated by a facile hydrothermal method. A critical factor, which influences the coating state of the SnO2 shells over Au NRs, was found to be the concentration of CTAB agent in the system and the corresponding mechanism was also proposed. The photocatalytic activities of the Au@SnO2 nanohybrids were examined by degradation of rhodamine B (RhB) dyes at room temperature. The Au@SnO2 nanohybrids exhibited much higher catalytic activities than that of the commercial SnO2 NPs, which could be attributed to the localized electric field enhancement effect of Au nanorods plasmon and charges transfer between the Au nanorods and SnO2.

  11. Influence of impurities on the crystallization of dextrose monohydrate

    Science.gov (United States)

    Markande, Abhay; Nezzal, Amale; Fitzpatrick, John; Aerts, Luc; Redl, Andreas

    2012-08-01

    The effects of impurities on dextrose monohydrate crystallization were investigated. Crystal nucleation and growth kinetics in the presence of impurities were studied using an in-line focused beam reflectance monitoring (FBRM) technique and an in-line process refractometer. Experimental data were obtained from runs carried out at different impurity levels between 4 and 11 wt% in the high dextrose equivalent (DE) syrup. It was found that impurities have no significant influence on the solubility of dextrose in water. However, impurities have a clear influence on the nucleation and growth kinetics of dextrose monohydrate crystallization. Nucleation and growth rate were favored by low levels of impurities in the syrup.

  12. Striped morphologies induced by magnetic impurities in d-wave superconductors

    International Nuclear Information System (INIS)

    Zuo Xianjun

    2011-01-01

    Research Highlights: → We investigate striped morphologies induced by magnetic impurities in d-wave superconductors (DSCs). → For the single-impurity and two-impurity cases, modulated checkerboard pattern and stripe-like structures are induced. → When more magnetic impurities are inserted, more complex modulated structures could be induced, including rectilinear and right-angled stripes and quantum-corral-like structures. → Impurities could induce complex striped morphologies in DSCs. - Abstract: We study striped morphologies induced by magnetic impurities in d-wave superconductors (DSCs) near optimal doping by self-consistently solving the Bogoliubov-de Gennes equations based on the t - t' - U - V model. For the single-impurity case, it is found that the stable ground state is a modulated checkerboard pattern. For the two-impurity case, the stripe-like structures in order parameters are induced due to the impurity-pinning effect. The modulations of DSC and charge orders share the same period of four lattice constants (4a), which is half the period of modulations in the coexisting spin order. Interestingly, when three or more impurities are inserted, the impurities could induce more complex striped morphologies due to quantum interference. Further experiments of magnetic impurity substitution in DSCs are expected to check these results.

  13. Impurity adsorption mechanism of borax for a suspension growth condition: A comparison of models and experimental data

    International Nuclear Information System (INIS)

    Al-Jibbouri, Sattar; Ulrich, Joachim

    2004-01-01

    A fluidized bed crystallizer is employed to investigate the growth and dissolution rates of MgSO 4 .7H 2 O from aqueous solutions in the presence of borax as impurity at 25 C. By adding 0.5, 1, 2 and 5 wt % of impurity the pH value changes from 6.7 to 7.11, while the saturation temperature shifts to 24.8, 24.4, 24 and 23.1 C, respectively. The data on crystal growth rates from aqueous solutions as a function of impurity concentration are discussed from the standpoint of Cabrera and Vermileya, and Kubota and Mullin. The value of the impurity effect, αθ eq , determined from analysis of the data on growth kinetics was found to be in good agreement with the value obtained from direct adsorption experiments. The estimated value of the average spacing between the adjacent adsorption active sites and the average distance between the neighbouring impurity-adsorbed sites are also reported. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Nanocrystalline SnO2:F Thin Films for Liquid Petroleum Gas Sensors

    Directory of Open Access Journals (Sweden)

    Sutichai Chaisitsak

    2011-07-01

    Full Text Available This paper reports the improvement in the sensing performance of nanocrystalline SnO2-based liquid petroleum gas (LPG sensors by doping with fluorine (F. Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer. The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO2 films was investigated. Atomic Force Microscopy (AFM and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO2 with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time of the SnO2:F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO2 was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO2:F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection.

  15. Ordered CoSn-type ternary phases in Co3Sn3-xGex

    DEFF Research Database (Denmark)

    Allred, Jared M.; Jia, Shuang; Bremholm, Martin

    2012-01-01

    . By taking advantage of the chemical differences between the two crystallographically inequivalent Sn sites in the structure, we observe ordered ternary phases, nominally Co3SnGe2 and Co3Sn2Ge. The electron count and unit cell configuration remain unchanged from CoSn; these observations thus help to clarify...

  16. Finite Element Analysis of Transverse Compressive Loads on Superconducting Nb3Sn Wires Containing Voids

    Science.gov (United States)

    D'Hauthuille, Luc; Zhai, Yuhu; Princeton Plasma Physics Lab Collaboration; University of Geneva Collaboration

    2015-11-01

    High field superconductors play an important role in many large-scale physics experiments, particularly particle colliders and fusion devices such as the LHC and ITER. The two most common superconductors used are NbTi and Nb3Sn. Nb3Sn wires are favored because of their significantly higher Jc, allowing them to produce much higher magnetic fields. The main disadvantage is that the superconducting performance of Nb3Sn is highly strain-sensitive and it is very brittle. The strain-sensitivity is strongly influenced by two factors: plasticity and cracked filaments. Cracks are induced by large stress concentrators due to the presence of voids. We will attempt to understand the correlation between Nb3Sn's irreversible strain limit and the void-induced stress concentrations around the voids. We will develop accurate 2D and 3D finite element models containing detailed filaments and possible distributions of voids in a bronze-route Nb3Sn wire. We will apply a compressive transverse load for the various cases to simulate the stress response of a Nb3Sn wire from the Lorentz force. Doing this will further improve our understanding of the effect voids have on the wire's mechanical properties, and thus, the connection between the shape & distribution of voids and performance degradation.

  17. Impurity screening of scrape-off plasma in a tokamak

    International Nuclear Information System (INIS)

    Kishimoto, Hiroshi; Tani, Keiji; Nakamura, Hiroo

    1981-11-01

    Impurity screening effect of a scrape-off layer has been studied in a tokamak, based on a simple model of wall-released impurity behavior. Wall-sputtered impurities are stopped effectively by the scrape-off plasma for a medium-Z or high-Z wall system while major part of impurities enters the main plasma in a low-Z wall system. The screening becomes inefficient with increase of scrape-off plasma temperature. Successive multiplication of recycling impurities in the scrape-off layer is large for a high-Z wall and is enhanced by a rise of scrape-off plasma temperature. The stability of plasma-wall interaction is determined by a multiplication factor of recycling impurities. (author)

  18. Interface between Sn-Sb-Cu solder and copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sebo, P., E-mail: Pavel.Sebo@savba.sk [Institute of Materials and Machine Mechanics, Slovak Academy of Sciences, Racianska 75, 831 02 Bratislava 3 (Slovakia); Svec, P. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Faculty of Materials Science and Technology, Slovak University of Technology, J. Bottu 25, 917 24 Trnava (Slovakia); Janickovic, D.; Illekova, E. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Plevachuk, Yu. [Ivan Franko National University, Department of Metal Physics, 79005 Lviv (Ukraine)

    2011-07-15

    Highlights: {yields} New lead-free solder materials based on Sn-Sb-Cu were designed and prepared. {yields} Melting and solidification temperatures of the solders have been determined. {yields} Cu-substrate/solder interaction has been analyzed and quantified. {yields} Phases formed at the solder-substrate interface have been identified. {yields} Composition and soldering atmospheres were correlated with joint strength. - Abstract: Influence of antimony and copper in Sn-Sb-Cu solder on the melting and solidification temperatures and on the microstructure of the interface between the solder and copper substrate after wetting the substrate at 623 K for 1800 s were studied. Microstructure of the interface between the solder and copper substrates in Cu-solder-Cu joints prepared at the same temperature for 1800 s was observed and shear strength of the joints was measured. Influence of the atmosphere - air with the flux and deoxidising N{sub 2} + 10H{sub 2} gas - was taken into account. Thermal stability and microstructure were studied by differential scanning calorimetry (DSC), light microscopy, scanning electron microscopy (SEM) with energy-dispersive spectrometry (EDS) and X-ray diffraction (XRD). Melting and solidification temperatures of the solders were determined. An interfacial transition zone was formed by diffusion reaction between solid copper and liquid solder. At the interface Cu{sub 3}Sn and Cu{sub 6}Sn{sub 5} phases arise. Cu{sub 3}Sn is adjacent to the Cu substrate and its thickness decreases with increasing the amount of copper in solder. Scallop Cu{sub 6}Sn{sub 5} phase is formed also inside the solder drop. The solid solution Sn(Sb) and SbSn phase compose the interior of the solder drop. Shear strength of the joints measured by push-off method decreases with increasing Sb concentration. Copper in the solder shows even bigger negative effect on the strength.

  19. Growth of highly textured SnS on mica using an SnSe buffer layer

    International Nuclear Information System (INIS)

    Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C.

    2014-01-01

    We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer

  20. Observation of impurity accumulation and concurrent impurity influx in PBX

    International Nuclear Information System (INIS)

    Sesnic, S.S.; Fonck, R.J.; Ida, K.; Couture, P.; Kaita, R.; Kaye, S.; Kugel, H.; LeBlanc, B.; Okabayashi, M.; Paul, S.; Powell, E.T.; Reusch, M.; Takahashi, H.; Gammel, G.; Morris, W.

    1987-01-01

    Impurity studies in L- and H-mode discharges in PBX have shown that both types of discharges can evolve into either an impurity accumulative or nonaccumulative case. In a typical accumulative discharge, Z eff peaks in the center to values of about 5. The central metallic densities can be high, n met /n e ≅ 0.01, resulting in central radiated power densities in excess of 1 W/cm 3 , consistent with bolometric estimates. The radial profiles of metals obtained independently from the line radiation in the soft X-ray and the VUV regions are very peaked. Concurrent with the peaking, an increase in the impurity influx coming from the edge of the plasma is observed. At the beginning of the accumulation phase the inward particle flux for titanium has values of 6x10 10 and 10x10 10 particles/cm 2 s at minor radii of 6 and 17 cm. At the end of the accumulation phase, this particle flux is strongly increased to values of 3x10 12 and 1x10 12 particles/cm 2 s. This increased flux is mainly due to influx from the edge of the plasma and to a lesser extent due to increased convective transport. Using the measured particle flux, an estimate of the diffusion coefficient D and the convective velocity v is obtained. (orig.)

  1. Cu{sub 2}ZnSnS{sub 4} nanoflakes prepared by one step microwave irradiation technique: Effect of Cu concentration

    Energy Technology Data Exchange (ETDEWEB)

    Kandare, S. P.; Dhole, S. D.; Bhoraskar, V. N.; Dahiwale, S. S., E-mail: ssd@physics.unipune.ac.in [Department of Physic, Savitribai Phule Pune University, Pune, 411007 (India)

    2016-05-23

    Cu{sub 2}ZnSnS{sub 4} (CZTS) nanoflakes were synthesized in one step by microwave irradiation method. Controlling the secondary phases in Copper Zinc Tin Sulfide (CZTS) material is critical, but it is necessary to control secondary phases in order to achieve the high efficiency solar cells made from CZTS. In the recent years, CZTS has shown its growing importance in thin film photovoltaic application because of its favorable optical and electrical properties. In this work, a systematic study has been carried out by properly controlling the copper concentration to get the pure phase of CZTS. X-ray diffraction shows the CZTS kesterite structure. Optical band gap estimated from UV-Visible spectroscopy was around 1.37eV. Systematic Raman study reveals the suppression of Cu{sub 2}S peak with variation in copper concentration which otherwise was not clear from XRD and UV-visible data.

  2. Impurity induced resistivity upturns in underdoped cuprates

    Energy Technology Data Exchange (ETDEWEB)

    Das, Nabyendu, E-mail: nabyendudas@gmail.com; Singh, Navinder

    2016-01-28

    Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

  3. Impurity induced resistivity upturns in underdoped cuprates

    International Nuclear Information System (INIS)

    Das, Nabyendu; Singh, Navinder

    2016-01-01

    Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

  4. Determination of {sup 126}Sn half-life from ICP-MS and gamma spectrometry measurements

    Energy Technology Data Exchange (ETDEWEB)

    Bienvenu, P.; Arnal, N.; Comte, J. [CEA Cadarache DEN/DEC/SA3C/LARC, Paul Lez Durance (France); Ferreux, L.; Lepy, M.C.; Be, M.M. [CEA Saclay LIST LNE/LNHB, Gif sur Yvette (France); Andreoletti, G. [AREVA Cogema SL/UP2-800, Beaumont Hague (France)

    2009-07-01

    A new value of {sup 126}Sn half-life was determined by combination of inductively coupled plasma-mass spectrometry (ICP-MS) and gamma spectrometry measurements on purified sample solutions collected from nuclear fuel reprocessing. {sup 126}Sn was isolated through dissolution of fission product precipitates and liquid-liquid extraction with N-benzoyl-N-phenyl-hydroxylamine (BPHA). The abundance of {sup 126}Sn atoms together with the absence of interfering species in the analysed solutions made it possible to measure both mass concentration and nuclide activity with high precision and accuracy. This led to a {sup 126}Sn half-life value of 1.980 (57) x 10{sup 5} a. (orig.)

  5. Effect of co-doped SnO{sub 2} nanoparticles on photoluminescence of cu-doped potassium lithium borate glass

    Energy Technology Data Exchange (ETDEWEB)

    Namma, Haydar Aboud; Wagiran, H.; Hussin, R.; Ariwahjoedi, B. [Department of Physics, Universiti Teknologi Malaysia, Skudai 81310, Malaysia and Baghdad College of Economic Sciences University (Iraq); Fundamental and Applied Sciences Department, Universiti Teknologi PETRONAS, 31750 Tronoh (Malaysia)

    2012-09-26

    The SnO{sub 2} co-doped lithium potassium borate glasses doped with 0.05, 0.10, 0.25 and 0.50 mol% of Cu were synthesized by the melt quenching technique. The SnO{sub 2} co-dope was added to the compounds in the amounts of 0.05, 0.10, and 0.20 mol%. The photoluminescent spectrum for different concentrations of copper was studied. It was observed that the intensity of blue emission (450, 490 nm) varies with concentration mol%. In addition, with different concentration of SnO{sub 2} to 0.10 mol% Cu, the influence of the luminescence has been observed to enhance intensity and shifted to blue and red (490, 535 nm) emissions.

  6. Plasmon-enhanced phonon and ionized impurity scattering in doped silicon

    International Nuclear Information System (INIS)

    Chen, Ming-Jer; Hsieh, Shang-Hsun; Chen, Chuan-Li

    2015-01-01

    Historically, two microscopic electron scattering calculation methods have been used to fit macroscopic electron mobility data in n-type silicon. The first method was performed using a static system that included long-range electron-plasmon scattering; however, the well-known Born approximation fails in this case when dealing with electron-impurity scattering. In the second method, sophisticated numerical simulations were developed around plasmon-excited potential fluctuations and successfully reproduced the mobility data at room temperature. In this paper, we propose a third method as an alternative to the first method. First, using a fluctuating system, which was characterized on the basis of our recently experimentally extracted plasmon-excited potential fluctuations, the microscopic calculations reveal enhanced short-range scattering of electrons by phonons and ionized impurities due to increased electron temperature and increased screening length, respectively. The increased hot electron population makes the Born approximation hold, which eases the overall calculation task substantially. Then, we return to the static system while incorporating plasmon-enhanced impurity scattering. The resulting macroscopic electron mobility shows fairly good agreement with data over wide ranges of temperatures (200–400 K) and doping concentrations (10 15 –10 20  cm −3 ). Application of the proposed method to strained silicon is also demonstrated

  7. Light impurity production in tokamaks

    International Nuclear Information System (INIS)

    Philipps, V.; Vietzke, E.; Erdweg, M.

    1989-01-01

    A review is given of the different erosion processes of carbon materials with special emphasis on conditions relevant to plasma surface interactions. New results on the chemical erosion and radiation enhanced sublimation of boron-carbon layers are presented. The chemical hydrocarbon formation produced by the interaction of the TEXTOR scrape-off plasma with a carbon target has been investigated up to temperatures of 1500K using a Sniffer probe. The chemical interaction of the plasma with the carbon walls in TEXTOR is also analysed by measuring the hydrocarbon and CO and CO 2 partial pressures built up on the surrounding walls during the discharges. The recycling of oxygen impurities in an all carbon surrounding occurs predominantly in the form of CO and Co 2 molecules and the analysis of both neutral pressures during the discharges has been used as an additional diagnostic for the oxygen impurity situation in TEXTOR. These data are discussed in view of spectroscopic measurements on the influx of carbon and oxygen atoms from the walls and impurity line radiation. CD-band spectroscopy in addition is employed to identify the hydrocarbon chemical carbon erosion. Our present understanding of the oxygen impurity recycling and the oxygen sources are described. Particle induced release of CO molecules from the entire first wall is believed to be the dominant influx process of oxygen in the SOL of plasmas with carbon facing materials. The influence of coating the TEXTOR first wall with a boron-carbon film (B/C ≅1) on the light impurity behaviour is shown. (author)

  8. Chip-to-chip SnO2 nanowire network sensors for room temperature H2 detection

    Science.gov (United States)

    Köck, A.; Brunet, E.; Mutinati, G. C.; Maier, T.; Steinhauer, S.

    2012-06-01

    The employment of nanowires is a very powerful strategy to improve gas sensor performance. We demonstrate a gas sensor device, which is based on silicon chip-to-chip synthesis of ultralong tin oxide (SnO2) nanowires. The sensor device employs an interconnected SnO2 nanowire network configuration, which exhibits a huge surface-to-volume ratio and provides full access of the target gas to the nanowires. The chip-to-chip SnO2 nanowire device is able to detect a H2 concentration of only 20 ppm in synthetic air with ~ 60% relative humidity at room temperature. At an operating temperature of 300°C a concentration of 50 ppm H2 results in a sensitivity of 5%. At this elevated temperature the sensor shows a linear response in a concentration range between 10 ppm and 100 ppm H2. The SnO2-nanowire fabrication procedure based on spray pyrolysis and subsequent annealing is performed at atmospheric pressure, requires no vacuum and allows upscale of the substrate to a wafer size. 3D-integration with CMOS chips is proposed as viable way for practical realization of smart nanowire based gas sensor devices for the consumer market.

  9. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  10. Preconcentration of Sn (II) using the methylene blue on the activated carbon and its determination by spectrophotometry method.

    Science.gov (United States)

    Khodadoust, Saeid; Cham Kouri, Narges

    2014-04-05

    A simple and accurate spectrophotometric method for determination of trace amounts of Sn (II) ion in soil sample was developed by using the methylene blue (MB) in the presence of activated carbon (AC) as the adsorbent Solid Phase Extraction (SPE) of Sn (II) and then determined by UV-Vis. The Beer's law is obeyed over the concentration range of 1-80ngmL(-1) of Sn (II) with the detection limits of 0.34ngmL(-1). The influence of type and volume of eluent, concentration of MB, pH, and amount of AC on sensitivity of spectrophotometric method were optimized. The method has been successfully applied for Sn (II) ion determination in soil sample. Copyright © 2013 Elsevier B.V. All rights reserved.

  11. Dynamics of impurity modes and electron–phonon interaction in Heavy Fermion (HF) systems

    International Nuclear Information System (INIS)

    Shadangi, N.; Sahoo, J.; Mohanty, S.; Nayak, P.

    2014-01-01

    A theoretical explanation is provided to understand the effect of small concentration of impurities characterized by change in mass and nearest neighbor force constants on the phonon spectrum as well as on the electron–phonon interaction in some Heavy Fermion (HF) systems in the normal state within theoretical framework of the Periodic Anderson Model (PAM). Three different mechanisms of the electron–phonon interactions, namely, the usual interaction between the phonons with the electrons in the f-bands, electrons arising from that of hybridization term of PAM and the local electron–phonon coupling at the impurity sites are considered. Coherent Potential Approximation (CPA) is used to evaluate the configuration averaged self–energy and the total Green function. For simplicity of calculation the CPA self–energy is evaluated in Average t -matrix Approximation (ATA). The analytical analysis is carried out for finite T in the long wavelength limit. The influence of impurity mass parameter λ and other system parameters such as d, the position of f-level, the effective coupling strength g on the calculated re-normalized phonon frequency and the excitation spectrum through the spectral function is studied. The numerical analysis of the results does show the influence of impurities as evident from different plots in this paper.

  12. Enhanced thermoelectric property of oxygen deficient nickel doped SnO2 for high temperature application

    Science.gov (United States)

    Paulson, Anju; Sabeer, N. A. Muhammad; Pradyumnan, P. P.

    2018-04-01

    Motivated by the detailed investigation on the thermoelectric performance of oxide materials our work concentrated on the influence of acceptor dopants and defect density in the lattice plane for the enhancement of thermoelectric power. The series of Sn1‑x Nix O2 (0.01 ≤ x ≤ 0.05) compositions were prepared by solid state reaction mechanism and found that 3 atomic percentage Ni doped SnO2 can be considered as a good candidate due to its promising electrical and transport properties. Defect lattices were introduced in the sample and the deviation from oxygen stochiometry was ensured using photoluminescence measurement. High power factor was obtained for the 3 atomic percentage nickel doped SnO2 due to the effective number of charge carrier concentration and the depletion of oxygen rich layers. Defect centered and acceptor doped SnO2 lattice opens a new door for energy harvesting at higher temperatures.

  13. Microscopic models of impurities in silicon

    International Nuclear Information System (INIS)

    Assali, L.V.C.

    1985-01-01

    The study of electronic structure of insulated and complex puntual impurities in silicon responsible by the appearing of deep energy levels in the forbiden band of semiconductor, is presented. The molecular cluster model with the treatment of surface orbitals by Watson sphere within the formalism of Xα multiple scattering method, was used. The electronic structures of three clusters representative of perfect silicon crystal, which were used for the impurity studies, are presented. The method was applied to analyse insulated impurities of substitutional and interstitial hydrogen (Si:H and Si:H i ), subtitutional and interstitial iron in neutral and positive charge states (Si:Fe 0 , + , Si:Fe 0 , + ) and substitutional gold in three charge states(Si,Au - , 0 , + ). The thetraedic interstitial defect of silicon (Si:Si i ) was also studied. The complex impurities: neighbour iron pair in the lattice (Si:Fe 2 ), substitutional gold-interstitial iron pair (Si:Au s Fe) and substitutional boron-interstitial hydrogen pair (Si:B s H i ), were analysed. (M.C.K.) [pt

  14. Spectrophotometric determination of zinc in impure solutions

    International Nuclear Information System (INIS)

    Rodriguez Hernandez, B.; Reyes Tamaral, A.

    1972-01-01

    A dithizone colorimetric method is described for determining zinc concentrations of 0.001 to 5 g/l in aqueous solutions from Rio Tinto Mines, containing copper, iron and other impurities. Citrate, cyanide and bis-2hydroxyethyl)-dithiocarbamate are added to the aqueous sample of masking several metals, and zinc is extracted at pH 5 with a solution of dithizone in carbon tetrachloride. Excess of dithizone is removed with sodium sulphide, and optical density of zinc dithionate in organic solution is measured at 5.35 nm. Calibration curves obey Beer's law up to 0.5 micro Zn/ml. (Author) 5 refs

  15. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  16. Observations of long impurity confinement times in the ISX tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Burrell, K H; Wong, S K; Muller, III, C H; Hacker, M P [General Atomic Co., San Diego, CA (USA); Ketterer, H E; Isler, R C; Lazarus, E A [Oak Ridge National Lab., TN (USA)

    1981-08-01

    The transport of small amounts of silicon and aluminium injected into plasmas in the Impurity Study Experiment (ISX) tokamak is studied. By monitoring the time behaviour of ultra-violet spectral lines emitted by various charge states of those impurities and comparing this behaviour to the predictions of a multi-species impurity transport code, it is found that both impurity penetration times and impurity containment times are consistent with neoclassical predictions. The observed impurity containment times, which are greater than three times the energy containment time, are consistent with the inward convection predicted by neoclassical theory.

  17. Numerical studies of impurities in fusion plasmas

    International Nuclear Information System (INIS)

    Hulse, R.A.

    1982-09-01

    The coupled partial differential equations used to describe the behavior of impurity ions in magnetically confined controlled fusion plasmas require numerical solution for cases of practical interest. Computer codes developed for impurity modeling at the Princeton Plasma Physics Laboratory are used as examples of the types of codes employed for this purpose. These codes solve for the impurity ionization state densities and associated radiation rates using atomic physics appropriate for these low-density, high-temperature plasmas. The simpler codes solve local equations in zero spatial dimensions while more complex cases require codes which explicitly include transport of the impurity ions simultaneously with the atomic processes of ionization and recombination. Typical applications are discussed and computational results are presented for selected cases of interest

  18. Impurity study of TMX using ultraviolet spectroscopy

    International Nuclear Information System (INIS)

    Allen, S.L.; Strand, O.T.; Moos, H.W.; Fortner, R.J.; Nash, T.J.; Dietrich, D.D.

    1981-01-01

    An extreme ultraviolet (EUV) study of the emissions from intrinsic and injected impurities in TMX is presented. Two survey spectrographs were used to determine that the major impurities present were oxygen, nitrogen, carbon, and titanium. Three absolutely-calibrated monochromators were used to measure the time histories and radial profiles of these impurity emissions in the central cell and each plug. Two of these instruments were capable of obtaining radial profiles as a function of time in a single shot

  19. Multiscaling Dynamics of Impurity Transport in Drift-Wave Turbulence

    International Nuclear Information System (INIS)

    Futatani, S.; Benkadda, S.; Nakamura, Y.; Kondo, K.

    2008-01-01

    Intermittency effects and the associated multiscaling spectrum of exponents are investigated for impurities advection in tokamak edge plasmas. The two-dimensional Hasagawa-Wakatani model of resistive drift-wave turbulence is used as a paradigm to describe edge tokamak turbulence. Impurities are considered as a passive scalar advected by the plasma turbulent flow. The use of the extended self-similarity technique shows that the structure function relative scaling exponent of impurity density and vorticity follows the She-Leveque model. This confirms the intermittent character of the impurities advection in the turbulent plasma flow and suggests that impurities are advected by vorticity filaments

  20. Laser soldering of Sn-Ag-Cu and Sn-Zn-Bi lead-free solder pastes

    Science.gov (United States)

    Takahashi, Junichi; Nakahara, Sumio; Hisada, Shigeyoshi; Fujita, Takeyoshi

    2004-10-01

    It has reported that a waste of an electronics substrate including lead and its compound such as 63Sn-37Pb has polluted the environment with acid rain. For that environment problem the development of lead-free solder alloys has been promoted in order to find out the substitute for Sn-Pb solders in the United States, Europe, and Japan. In a present electronics industry, typical alloys have narrowed down to Sn-Ag-Cu and Sn-Zn lead-free solder. In this study, solderability of Pb-free solder that are Sn-Ag-Cu and Sn-Zn-Bi alloy was studied on soldering using YAG (yttrium aluminum garnet) laser and diode laser. Experiments were peformed in order to determine the range of soldering parameters for obtaining an appropriate wettability based on a visual inspection. Joining strength of surface mounting chip components soldered on PCB (printed circuit board) was tested on application thickness of solder paste (0.2, 0.3, and 0.4 mm). In addition, joining strength characteristics of eutectic Sn-Pb alloy and under different power density were examined. As a result, solderability of Sn-Ag-Cu (Pb-free) solder paste are equivalent to that of coventional Sn-Pb solder paste, and are superior to that of Sn-Zn-Bi solder paste in the laser soldering method.

  1. Toroidal asymmetries in divertor impurity influxes in NSTX

    Directory of Open Access Journals (Sweden)

    F. Scotti

    2017-08-01

    Full Text Available Toroidal asymmetries in divertor carbon and lithium influxes were observed in NSTX, due to toroidal differences in surface composition, tile leading edges, externally-applied three-dimensional (3D fields and toroidally-localized edge plasma modifications due to radio frequency heating. Understanding toroidal asymmetries in impurity influxes is critical for the evaluation of total impurity sources, often inferred from measurements with a limited toroidal coverage. The toroidally-asymmetric lithium deposition induced asymmetries in divertor lithium influxes. Enhanced impurity influxes at the leading edge of divertor tiles were the main cause of carbon toroidal asymmetries and were enhanced during edge localized modes. Externally-applied 3D fields led to strike point splitting and helical lobes observed in divertor impurity emission, but marginal changes to the toroidally-averaged impurity influxes. Power coupled to the scrape-off layer SOL plasma during radio frequency (RF heating of H-mode discharges enhanced impurity influxes along the non-axisymmetric divertor footprint of flux tubes connecting to plasma in front of the RF antenna.

  2. Thermoluminescence investigation of sol–gel derived and γ-irradiated SnO{sub 2}:Eu{sup 3+} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Bajpai, Namrata [Department of Chemistry, Government E. R. R. PG Science College, Bilaspur 495006, Chhattisgarh (India); Khan, S.A. [Government College Seepat, Bilaspur 495555, Chhattisgarh (India); Kher, R.S. [Department of Physics, Government E. R. R. PG Science College, Bilaspur 495006, Chhattisgarh (India); Bramhe, Namita [SOS in Physics and Astrophysics, Pt. Ravishankar Shukla University Raipur 492001, Chhattisgarh (India); Dhoble, S.J. [Department of Physics, RTM Nagpur University, Nagpur 440033, Maharashtra (India); Tiwari, Ashish, E-mail: ashisht048@gmail.com [Department of Chemistry, Government Lahiri College, Chirimiri, Korea 497449, Chhattisgarh (India)

    2014-01-15

    Nanocrystalline tin oxide (IV) doped with Eu{sup 3+} has been synthesized by sol–gel technique. The prepared SnO{sub 2}:Eu{sup 3+} nanoparticles were calcined and characterized by XRD, SEM, TEM and FTIR. The XRD analysis revealed well crystallised tetragonal rutile phase. Electron microscopy showed spherical morphologies with an average size of 15–20 nm. The thermoluminescence (TL) properties of SnO{sub 2}:Eu{sup 3+} nanoparticles were investigated after γ-irradiation using {sup 60}Co source at room temperature. The TL glow curve showed variation in TL peak intensity as the concentration of dopant is changed. It has been found that TL response of linear in the range 0.5–2.0 kGy. This paper discusses about the optimal doping concentration of Europium in SnO{sub 2} nanoparticles and its dosimetric application has also been studied. -- Highlights: • Thermoluminescence (TL) properties of SnO{sub 2}:Eu{sup 3+} nanoparticles were investigated after γ-irradiation. • TL glow curve showed variation in TL peak intensity as the concentration of dopant is changed. • Optimal TL intensity was obtained for SnO{sub 2}:Eu{sub 0.5}. • TL response was found to be linear in the range 0.5–2.0 kGy.

  3. SN 2009E

    DEFF Research Database (Denmark)

    Pastorello...[], A.; Pumo, M.L.; Navasardyan, H.

    2012-01-01

    . In this paper we investigate the properties of SN 2009E, which exploded in a relatively nearby spiral galaxy (NGC 4141) and that is probably the faintest 1987A-like supernova discovered so far. We also attempt to characterize this subgroup of core-collapse supernovae with the help of the literature and present...... observations which started about 2 months after the supernova explosion, highlight significant differences between SN 2009E and the prototypical SN 1987A. Modelling the data of SN 2009E allows us to constrain the explosion parameters and the properties of the progenitor star, and compare the inferred estimates...... 2009E ejected about 0.04 M⊙ of 56Ni, which is the smallest 56Ni mass in our sample of 1987A-like events. Modelling the observations with a radiation hydrodynamics code, we infer for SN 2009E a kinetic plus thermal energy of about 0.6 foe, an initial radius of ~7 × 1012 cm and an ejected mass of ~19 M...

  4. Investigation of correlations in some chemical impurities and isotope ratios for nuclear forensic purposes

    International Nuclear Information System (INIS)

    Wallenius, M.; Mayer, K.; Nicholl, A.; Horta, J.

    2002-01-01

    geographic location. Furthermore, we performed measurements of impurities and the n( 18 O)/n( 16 O) ratio in a set of uranium dioxide pellet samples (from different production batches) that had been produced in the same facility. This 'horizontal' comparison (same facility and same material type) aims at providing information on the consistency of data obtained and on the variation in the level and the relative abundance of some impurities. A better understanding of the propagation of chemical impurities from the base material to the final product and the correlation between the relative concentrations of individual impurities is important in the definition of characteristic impurities for nuclear forensic purposes. (author)

  5. Preparation, deformation, and failure of functional Al-Sn and Al-Sn-Pb nanocrystalline alloys

    Science.gov (United States)

    Noskova, N. I.; Vil'Danova, N. F.; Filippov, Yu. I.; Churbaev, R. V.; Pereturina, I. A.; Korshunov, L. G.; Korznikov, A. V.

    2006-12-01

    Changes in the structure, hardness, mechanical properties, and friction coefficient of Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb (wt %) alloys subjected to severe plastic deformation by equal-channel angular pressing (with a force of 40 tonne) and by shear at a pressure of 5 GPa have been studied. The transition into the nanocrystalline state was shown to occur at different degrees of plastic deformation. The hardness exhibits nonmonotonic variations, namely, first it increases and subsequently decreases. The friction coefficient of the Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys quenched from the melt was found to be 0.33; the friction coefficients of these alloys in the submicrocrystalline state (after equal-channel angular pressing) equal 0.24, 0.32, and 0.35, respectively. The effect of disintegration into nano-sized powders was found to occur in the Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys after severe plastic deformation to ɛ = 6.4 and subsequent short-time holding.

  6. Study of neutron-deficient Sn isotopes

    International Nuclear Information System (INIS)

    Auger, G.

    1982-05-01

    The formation of neutron deficient nuclei by heavy ion reactions is investigated. The experimental technique is presented, and the results obtained concerning Sn et In isotopes reported: first excited states of 106 Sn, high spin states in 107 Sn and 107 In; Yrast levels of 106 Sn, 107 Sn, 108 Sn; study of neutron deficient Sn and In isotopes formed by the desintegration of the compound nucleus 112 Xe. All these results are discussed [fr

  7. Impurities and conductivity in a D-wave superconductor

    International Nuclear Information System (INIS)

    Balatsky, A.V.

    1994-01-01

    Impurity scattering in the unitary limit produces low energy quasiparticles with anisotropic spectrum in a two-dimensional d-wave superconductor. The authors describe a new quasi-one-dimensional limit of the quasiparticle scattering, which might occur in a superconductor with short coherence length and with finite impurity potential range. The dc conductivity in a d-wave superconductor is predicted to be proportional to the normal state scattering rate and is impurity-dependent. They show that quasi-one-dimensional regime might occur in high-T c superconductors with Zn impurities at low temperatures T approx-lt 10 K

  8. On impurity handling in high performance stellarator/heliotron plasmas

    International Nuclear Information System (INIS)

    Burhenn, R.; Feng, Y.; Ida, K.

    2008-10-01

    The Large Helical Device (LHD) and Wendelstein 7-X (W7-X, under construction) are experiments specially designed to demonstrate long pulse (quasi steady-state) operation, which is an intrinsic property of Stellarators and Heliotrons. Significant progress was made in establishment of high performance plasmas. A crucial point is the increasing impurity confinement towards high density as observed at several machines (TJ-II, W7-AS, LHD) which can lead to impurity accumulation and early pulse termination by radiation collapse at high density. In addition, theoretical predictions for non-axisymmetric configurations prognosticate the absence of impurity screening by ion temperature gradients in standard ion root plasmas. Nevertheless, scenarios were found where impurity accumulation was successfully avoided in LHD and/or W7-AS by the onset of drag forces in the high density and low temperature scrape-off-layer, the generation of magnetic islands at the plasma boundary and to a certain degree also by ELMs, flushing out impurities and reducing the net-impurity influx into the core. Additionally, a reduction of impurity core confinement was observed in the W7-AS High Density H-mode (HDH) regime and by application of sufficient ECRH heating power. The exploration of such purification mechanisms is a demanding task for successful steady-state operation. The impurity transport at the plasma edge/SOL was identified to play a major role for the global impurity behaviour in addition to the core confinement. (author)

  9. Origin of room temperature ferromagnetism in SnO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jing [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Bai, Guohua; Jiang, Yinzhu [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Du, Youwei [National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Chen, E-mail: chen_wu@zju.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yan, Mi, E-mail: mse_yanmi@zju.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

    2017-03-15

    SnO{sub 2} films exhibiting room temperature ferromagnetism (RTFM) have been prepared on Si (001) by pulsed laser deposition. The saturation magnetization (M{sub s}) of the films experiences a decreasing trend followed by increasing with the growth temperature increased from RT to 400 ℃. The growth temperature affects both the concentration and the location of the oxygen vacancies as the origin of the RTFM. With lower growth temperatures (<300 ℃), more oxygen vacancies exist in the inner film for the samples with less crystallinity, resulting in enhanced magnetism. Higher deposition temperature leads to less oxygen vacancies in the inner film but more oxygen defects at the film surface, which is also beneficial to achieve greater magnetism. Various oxygen pressures during growth and post-annealing have also been used to confirm the role of oxygen vacancies. The study demonstrates that the surface oxygen defects and the positively charged monovalent O vacancies (V{sub O}{sup +}) in the inner film are the origin of the magnetism in SnO{sub 2} films. - Highlights: • SnO{sub 2} films exhibiting room temperature ferromagnetism (RTFM) have been prepared on Si (001) by pulsed laser deposition. • Growth temperature, oxygen pressure and annealing affect the growth of SnO{sub 2} films. • Both the concentration and location of the oxygen vacancies play critical roles in the magnetization.

  10. Insulator-semimetallic transition in quasi-1D charged impurity-infected armchair boron-nitride nanoribbons

    Science.gov (United States)

    Dinh Hoi, Bui; Yarmohammadi, Mohsen

    2018-04-01

    We address control of electronic phase transition in charged impurity-infected armchair-edged boron-nitride nanoribbons (ABNNRs) with the local variation of Fermi energy. In particular, the density of states of disordered ribbons produces the main features in the context of pretty simple tight-binding model and Green's functions approach. To this end, the Born approximation has been implemented to find the effect of π-band electron-impurity interactions. A modulation of the π-band depending on the impurity concentrations and scattering potentials leads to the phase transition from insulator to semimetallic. We present here a detailed physical meaning of this transition by studying the treatment of massive Dirac fermions. From our findings, it is found that the ribbon width plays a crucial role in determining the electronic phase of disordered ABNNRs. The obtained results in controllable gap engineering are useful for future experiments. Also, the observations in this study have also fueled interest in the electronic properties of other 2D materials.

  11. Report on intercomparison exercise SR-54. Determination of impurities in U3O8

    International Nuclear Information System (INIS)

    Doubek, N.; Bagliano, G.; Deron, S.

    1984-04-01

    The report presents results of a laboratory intercomparison of impurities in U 3 O 8 sample organized by the IAEA's Analytical Quality Control Service. Twelve laboratories in 11 countries sent their results. The framework of the intercomparison was therefore conceived mainly as a ''mean'' to laboratories dealing with analysis of impurities in uranium samples to check the reliability of their results. The evaluation was based on 97 laboratory means obtained with emission spectroscopy, atomic absorption techniques and neutron activation analysis. The concentration of three elements could be certified as a result of this intercomparison; informational values could be established for an additional six elements

  12. Recent trends in the impurity profile of pharmaceuticals

    Directory of Open Access Journals (Sweden)

    Kavita Pilaniya

    2010-01-01

    Full Text Available Various regulatory authorities such as the International Conference on Harmonization (ICH, the United States Food and Drug administration (FDA, and the Canadian Drug and Health Agency (CDHA are emphasizing on the purity requirements and the identification of impurities in Active Pharmaceutical Ingredients (APIs. The various sources of impurity in pharmaceutical products are - reagents, heavy metals, ligands, catalysts, other materials like filter aids, charcoal, and the like, degraded end products obtained during \\ after manufacturing of bulk drugs from hydrolysis, photolytic cleavage, oxidative degradation, decarboxylation, enantiomeric impurity, and so on. The different pharmacopoeias such as the British Pharmacopoeia, United State Pharmacopoeia, and Indian Pharmacopoeia are slowly incorporating limits to allowable levels of impurities present in APIs or formulations. Various methods are used to isolate and characterize impurities in pharmaceuticals, such as, capillary electrophoresis, electron paramagnetic resonance, gas-liquid chromatography, gravimetric analysis, high performance liquid chromatography, solid-phase extraction methods, liquid-liquid extraction method, Ultraviolet Spectrometry, infrared spectroscopy, supercritical fluid extraction column chromatography, mass spectrometry, Nuclear magnetic resonance (NMR spectroscopy, and RAMAN spectroscopy. Among all hyphenated techniques, the most exploited techniques for impurity profiling of drugs are Liquid Chromatography (LC-Mass Spectroscopy (MS, LC-NMR, LC-NMR-MS, GC-MS, and LC-MS. This reveals the need and scope of impurity profiling of drugs in pharmaceutical research.

  13. Electrochemical properties of Ti-Ni-Sn materials predicted by {sup 119}Sn Mössbauer spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ladam, A., E-mail: alix.ladam@univ-montp2.fr; Aldon, L.; Lippens, P.-E.; Olivier-Fourcade, J.; Jumas, J.-C. [Université de Montpellier, Institut Charles Gerhardt, UMR 5253 CNRS (France); Cenac-Morthe, C. [CNES, Service DCT/TV/El (France)

    2016-12-15

    The electrochemical activity of TiNiSn, TiNi {sub 2}Sn and Ti {sub 6}Sn {sub 5} compounds considered as negative electrode materials for Li-ion batteries has been predicted from the isomer shift- Hume-Rothery electronic density correlation diagram. The ternary compounds were obtained from solid-state reactions and Ti {sub 6}Sn {sub 5} by ball milling. The {sup 119}Sn Mössbauer parameters were experimentally determined and used to evaluate the Hume-Rothery electronic density [e {sub av}]. The values of [e {sub av}] are in the region of Li-rich Li-Sn alloys for Ti {sub 6}Sn {sub 5} and outside this region for the ternary compounds, suggesting that the former compound is electrochemically active but not the two latter ones. Electrochemical tests were performed for these different materials confirming this prediction. The close values of [e {sub av}] for Ti {sub 6}Sn {sub 5} and Li-rich Li-Sn alloys indicate that the observed good capacity retention could be related to small changes in the global structures during cycling.

  14. Striped morphologies induced by magnetic impurities in d-wave superconductors

    Science.gov (United States)

    Zuo, Xian-Jun

    2011-05-01

    We study striped morphologies induced by magnetic impurities in d-wave superconductors (DSCs) near optimal doping by self-consistently solving the Bogoliubov-de Gennes equations based on the t - t‧ - U - V model. For the single-impurity case, it is found that the stable ground state is a modulated checkerboard pattern. For the two-impurity case, the stripe-like structures in order parameters are induced due to the impurity-pinning effect. The modulations of DSC and charge orders share the same period of four lattice constants (4 a), which is half the period of modulations in the coexisting spin order. Interestingly, when three or more impurities are inserted, the impurities could induce more complex striped morphologies due to quantum interference. Further experiments of magnetic impurity substitution in DSCs are expected to check these results.

  15. Theoretical study of electronic structures and spectroscopic properties of Ga 3Sn, GaSn 3, and their ions

    Science.gov (United States)

    Zhu, Xiaolei

    2007-01-01

    Ground and excited states of mixed gallium stannide tetramers (Ga 3Sn, Ga 3Sn +, Ga 3Sn -, GaSn 3, GaSn 3+, and GaSn 3-) are investigated employing the complete active space self-consistent-field (CASSCF), density function theory (DFT), and the coupled-cluster single and double substitution (including triple excitations) (CCSD(T)) methods. The ground states of Ga 3Sn, Ga 3Sn +, and Ga 3Sn - are found to be the 2A 1, 3B 1, and 1A 1 states in C2v symmetry with a planar quadrilateral geometry, respectively. The ground states of GaSn 3 and GaSn 3- is predicted to be the 2A 1 and 1A 1 states in C2v point group with a planar quadrilateral structure, respectively, while the ground state of GaSn 3+ is the 1A 1 state with ideal triangular pyramid C3v geometry. Equilibrium geometries, vibrational frequencies, binding energies, electron affinities, ionization energies, and other properties of Ga 3Sn and GaSn 3 are computed and discussed. The anion photoelectron spectra of Ga 3Sn - and GaSn 3- are also predicted. It is interesting to find that the amount of charge transfer between Ga and Sn 2 atoms in the 1A 1 state of GaSn 3+ greatly increases upon electron ionization from the 2A 1 state of GaSn 3, which may be caused by large geometry change. On the other hand, the results of the low-lying states of Ga 3Sn and GaSn 3 are compared with those of Ga 3Si and GaSi 3.

  16. Electro-oxidation of Ethanol on Carbon Supported PtSn and PtSnNi Catalysts

    Directory of Open Access Journals (Sweden)

    Nur Hidayati

    2016-03-01

    Full Text Available Even though platinum is known as an active electro-catalyst for ethanol oxidation at low temperatures (< 100 oC, choosing the electrode material for ethanol electro-oxidation is a crucial issue. It is due to its property which easily poisoned by a strong adsorbed species such as CO. PtSn-based electro-catalysts have been identified as better catalysts for ethanol electro-oxidation. The third material is supposed to improved binary catalysts performance. This work presents a study of the ethanol electro-oxidation on carbon supported Pt-Sn and Pt-Sn-Ni catalysts. These catalysts were prepared by alcohol reduction. Nano-particles with diameters between 2.5-5.0 nm were obtained. The peak of (220 crystalline face centred cubic (fcc Pt phase for PtSn and PtSnNi alloys was repositioned due to the presence of Sn and/or Ni in the alloy. Furthermore, the modification of Pt with Sn and SnNi improved ethanol and CO electro-oxidation. Copyright © 2016 BCREC GROUP. All rights reserved Received: 10th November 2015; Revised: 1st February 2016; Accepted: 1st February 2016 How to Cite: Hidayati, N., Scott, K. (2016. Electro-oxidation of Ethanol on Carbon Supported PtSn and PtSnNi Catalysts. Bulletin of Chemical Reaction Engineering & Catalysis, 11 (1: 10-20. (doi:10.9767/bcrec.11.1.394.10-20 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.11.1.394.10-20

  17. Powder preparation technics for SnO2 with submycrometrics particles

    International Nuclear Information System (INIS)

    Hiratsuka, R.S.; Pulcinelli, S.H.; Santilli, C.V.; Masetto, S.R.

    1989-01-01

    Preparation of SnO 2 fine powders is a pointer research because of this application as gas detecting sensors. This work shows basicaly two powder preparation methods: i) from metalic tin oxidation with nitric acid, ii) from SnCl 4 hydrolysis in aquous solution of amonia hydroxides. It was analysed the concentration of nitric acid and the pH of precipitation influency of the structural and morphologic characteristics of the obtained powders. The materials were characterized by X-ray diffraction, infra-red spectroscopy and specific surface area [pt

  18. Improved lithium cyclability and storage in mesoporous SnO2 electronically wired with very low concentrations (≤1 %) of reduced graphene oxide.

    Science.gov (United States)

    Shiva, Konda; Rajendra, H B; Subrahmanyam, K S; Bhattacharyya, Aninda J; Rao, C N R

    2012-04-10

    On the wire: Mesoporous tin dioxide (SnO(2)) wired with very low amounts (≤1 %) of reduced graphene oxide (rGO) exhibits a remarkable improvement in lithium-ion battery performance over bare mesoporous or solid nanoparticles of SnO(2). Reversible lithium intercalation into SnO(2)/SnO over several cycles was demonstrated in addition to conventional reversible lithium storage by an alloying reaction. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Mechanical alloying of an immiscible α-Fe2O3-SnO2 ceramic

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Lin, Rong; Mørup, Steen

    1997-01-01

    in the immiscible ceramic oxide system. X-ray diffraction and Mossbauer spectroscopy investigations show that mechanical milling of alpha-Fe2O3 and SnO2 involves alloying on an atomic scale and that true solid solution formation occurs. We suggest that the high defect concentration and the chemical enthalpy of Fe3......+-O2--Sn4+ interfaces between nanostructured alpha-Fe2O3 and SnO2 regions may serve as a driving force for the formation of a solid solution in the immiscible ceramic system....

  20. Peculiarity of component interaction in {l_brace}Y, Dy{r_brace}-Mn-Sn ternary systems

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V.V. [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Konyk, M. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Romaka, L., E-mail: romakal@franko.lviv.ua [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Pavlyuk, V. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Jan Dlugosz University, Institute of Chemistry, Environmental Protection and Biotechnology, al. Armii Krajowej 13/15, 42200 Czestochowa (Poland); Ehrenberg, H. [Institute for Complex Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany); Tkachuk, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

    2011-07-14

    Highlights: > {l_brace}Y, Dy{r_brace}-Mn-Sn ternary systems at 770 K are characterized by formation of stannides with general compositions RMn{sub 6}Sn{sub 6} and R{sub 4}Mn{sub 4}Sn{sub 7}. > The crystal structure of YMn{sub 6}Sn{sub 6} was determined by single crystal and powder diffraction methods. > Structural analysis showed that Dy{sub 4}Mn{sub 4}Sn{sub 7} compound is disordered. > Isostructural R{sub 4}Mn{sub 4}Sn{sub 7} compounds were also found with Gd, Tb, Ho, Er, Tm(confirmed), Yb, and Lu. - Abstract: The phase equilibria in the Y-Mn-Sn and Dy-Mn-Sn ternary systems were studied at 770 K by means of X-ray and metallographic analyses in the whole concentration range. Both Y-Mn-Sn and Dy-Mn-Sn systems are characterized by formation of two ternary compounds RMn{sub 6}Sn{sub 6} (MgFe{sub 6}Ge{sub 6}-type, space group P6/mmm) and R{sub 4}Mn{sub 4}Sn{sub 7} (Zr{sub 4}Co{sub 4}Ge{sub 7}-type, space group I4/mmm). The disorder in Dy{sub 4}Mn{sub 4}Sn{sub 7} compound was found by single crystal method. Compounds with the same type of structure were also found with Gd, Tb, Ho, Er, Tm (confirmed), Yb, and Lu and their lattice parameters were determined.